WorldWideScience

Sample records for n-qubit toffoli gate

  1. Scheme for N-Qubit Toffoli Gate by Transport of Trapped Ultracold Ions

    Institute of Scientific and Technical Information of China (English)

    YANG Wan-Li; WEI Hua; CHEN Chang-Yong

    2008-01-01

    We propose a potentially practical scheme for implementing an n-qubit Toffoli gate by elaborately controlling the transport of ultracold ions through stationary laser beams. Conditioned on the uniform ionic transport velocity, the n-qubit Toffoli gate can be realized with high fidelity and high successful probability under current experimental conditions, which depends on a single resonant interaction with n trapped ions and has constant implementation time with the increase of qubits. We show that the increase of the ion number can improve the fidelity and the successful probability of the Toffoli gate.

  2. An Efficient Scheme for Implementing an N-Qubit Toffoli Gate with Superconducting Quantum-Interference Devices in Cavity QED

    Institute of Scientific and Technical Information of China (English)

    ZHENG An-Shou; LIU Ji-Bing; XIANG Dong; LIU Cui-Lan; YUAN Hong

    2007-01-01

    An alternative approach is proposed to realize an n-qubit Toffoli gate with superconducting quantum-interference devices (SQUIDs) in cavity quantum electrodynamics (QED). In the proposal, we represent two logical gates of a qubit with the two lowest levels of a SQUID while a higher-energy intermediate level of each SQUID is utilized for the gate manipulation. During the operating process, because the cavity field is always in vacuum state, the requirement on the cavity is greatly loosened and there is no transfer of quantum information between the cavity and SQUIDs.

  3. Fault Model for Testable Reversible Toffoli Gates

    Directory of Open Access Journals (Sweden)

    Yu Pang

    2012-09-01

    Full Text Available Techniques of reversible circuits can be used in low-power microchips and quantum communications. Current most works focuses on synthesis of reversible circuits but seldom for fault testing which is sure to be an important step in any robust implementation. In this study, we propose a Universal Toffoli Gate (UTG with four inputs which can realize all basic Boolean functions. The all single stuck-at faults are analyzed and a test-set with minimum test vectors is given. Using the proposed UTG, it is easy to implement a complex reversible circuit and test all stuck-at faults of the circuit. The experiments show that reversible circuits constructed by the UTGs have less quantum cost and test vectors compared to other works.

  4. Optimized Multiplier Using Reversible Multicontrol Input Toffoli Gates

    Directory of Open Access Journals (Sweden)

    H R Bhagyalakshmi

    2013-01-01

    Full Text Available Reversible logic is an important area to carry the computation into the world of quantum computing. In thispaper a 4-bit multiplier using a new reversible logic gate called BVPPG gate is presented. BVPPG gate isa 5 x 5 reversible gate which is designed to generate partial products required to perform multiplicationand also duplication of operand bits is obtained. This reduces the total cost of the circuit. Toffoli gate isthe universal and also most flexible reversible logic gate. So we have used the Toffoli gates to construct thedesigned multiplier.

  5. High-fidelity single-shot Toffoli gate via quantum control

    Science.gov (United States)

    Sanders, Barry; Zahedinejad, Ehsan; Ghosh, Joydip

    2015-05-01

    A single-shot Toffoli, or controlled-controlled-NOT, gate is desirable for classical and for quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, are universal for quantum computing. The Toffoli gate is a key ingredient for (non-topological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which requires much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to directly construct single-shot Toffoli gates and devise a scheme for three nearest-neighbor-coupled superconducting transmon systems that should operate with 99.9% fidelity under realistic conditions. The gate is achieved by a non-greedy quantum control procedure using our enhanced version of the Differential Evolution algorithm. arXiv:1501.04676 Acknowledges support from AITF, NSERC, USARO and 1000 Talent Plan.

  6. Realization of the Three-Qubit Toffoli Gate in Molecules

    Institute of Scientific and Technical Information of China (English)

    DU Jiang-Feng; SHI Ming-Jun; ZHOU Xian-Yi; FAN Yang-Mei; WU Ji-Hui; YE Bang-Jiao; WENG Hui-Min; HAN Rong-Dian

    2000-01-01

    We present the experimental realization of this gate with a solution of chlorostyrene molecules. Our method does not depend heavily on the two-qubit controlled operation, which used to serve as the basic quantum operation in quantum computing. At present, we use transition operator that can be applied to all qubits in one operation.It appears that no experimental realization has yet been reported up to now regarding the implementation of quantum Toffoli gate using transition pulse on three-qubit nuclear magnetic resonance quantum computers. In addition, our method is experimentally convenient to be extended to more qubits.

  7. Multifractality in fidelity sequences of optimized Toffoli gates

    Science.gov (United States)

    Moqadam, Jalil Khatibi; Welter, Guilherme S.; Esquef, Paulo A. A.

    2016-11-01

    We analyze the multifractality in the fidelity sequences of several engineered Toffoli gates. Using quantum control methods, we consider several optimization problems whose global solutions realize the gate in a chain of three qubits with XY Heisenberg interaction. Applying a minimum number of control pulses assuring a fidelity above 99 % in the ideal case, we design stable gates that are less sensitive to variations in the interqubits couplings. The most stable gate has the fidelity above 91 % with variations about 0.1 %, for up to 10 % variation in the nominal couplings. We perturb the system by introducing a single source of 1 / f noise that affects all the couplings. In order to quantify the performance of the proposed optimized gates, we calculate the fidelity of a large set of optimized gates under prescribed levels of coupling perturbation. Then, we run multifractal analysis on the sequence of attained fidelities. This way, gate performance can be assessed beyond mere average results, since the chosen multifractality measure (the width of the multifractal spectrum) encapsulates into a single performance indicator the spread of fidelity values around the mean and the presence of outliers. The higher the value of the performance indicator the more concentrated around the mean the fidelity values are and rarer is the occurrence of outliers. The results of the multifractal analysis on the fidelity sequences demonstrate the effectiveness of the proposed optimized gate implementations, in the sense they are rendered less sensitive to variations in the interqubits coupling strengths.

  8. One-Step Scheme for Realizing N-Qubit Quantum Phase Gates with Hot Trapped Ions

    Institute of Scientific and Technical Information of China (English)

    ZHENG Shi-Biao; LU Dao-Ming

    2011-01-01

    A scheme is presented for realizing an N-qubit quantum phase gate with trapped ions.Taking advantage of the virtual excitation of the vibrational mode, the qubit system undergoes a full-cycle of Rabi oscillation in the selective symmetric Dicke subspace.The scheme only involves a single step and the operation is insensitive to thermal motion.Moreover, the scheme does not require individual addresing of the ions.

  9. Approximate Toffoli Gate Originated from a Single Resonant Interaction of Cavity Dissipation and Atomic Spontaneous Emission

    Institute of Scientific and Technical Information of China (English)

    GU Xiao-Yan; CHEN Chang-Yong; SUN Jian-Qiang

    2008-01-01

    We propose a potentially practical scheme to implement an approximate three-qubit Toffoli gate by a single resonant interaction in dissipative cavity QED in which the cavity mode decay and atomic spontaneous emission are considered. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the approximate phase gate can be implemented by only a single dissipative resonant interaction of atoms with the cavity mode. Discussions are made for the advantages and the experimental feasibility of our scheme.

  10. Logic reversibility and thermodynamic irreversibility demonstrated by DNAzyme-based Toffoli and Fredkin logic gates.

    Science.gov (United States)

    Orbach, Ron; Remacle, Françoise; Levine, R D; Willner, Itamar

    2012-12-26

    The Toffoli and Fredkin gates were suggested as a means to exhibit logic reversibility and thereby reduce energy dissipation associated with logic operations in dense computing circuits. We present a construction of the logically reversible Toffoli and Fredkin gates by implementing a library of predesigned Mg(2+)-dependent DNAzymes and their respective substrates. Although the logical reversibility, for which each set of inputs uniquely correlates to a set of outputs, is demonstrated, the systems manifest thermodynamic irreversibility originating from two quite distinct and nonrelated phenomena. (i) The physical readout of the gates is by fluorescence that depletes the population of the final state of the machine. This irreversible, heat-releasing process is needed for the generation of the output. (ii) The DNAzyme-powered logic gates are made to operate at a finite rate by invoking downhill energy-releasing processes. Even though the three bits of Toffoli's and Fredkin's logically reversible gates manifest thermodynamic irreversibility, we suggest that these gates could have important practical implication in future nanomedicine.

  11. Fredkin and Toffoli Gates Implemented in Oregonator Model of Belousov-Zhabotinsky Medium

    Science.gov (United States)

    Adamatzky, Andrew

    A thin-layer Belousov-Zhabotinsky (BZ) medium is a powerful computing device capable for implementing logical circuits, memory, image processors, robot controllers, and neuromorphic architectures. We design the reversible logical gates — Fredkin gate and Toffoli gate — in a BZ medium network of excitable channels with subexcitable junctions. Local control of the BZ medium excitability is an important feature of the gates’ design. An excitable thin-layer BZ medium responds to a localized perturbation with omnidirectional target or spiral excitation waves. A subexcitable BZ medium responds to an asymmetric perturbation by producing traveling localized excitation wave-fragments similar to dissipative solitons. We employ interactions between excitation wave-fragments to perform the computation. We interpret the wave-fragments as values of Boolean variables. The presence of a wave-fragment at a given site of a circuit represents the logical truth, absence of the wave-fragment — logically false. Fredkin gate consists of ten excitable channels intersecting at 11 junctions, eight of which are subexcitable. Toffoli gate consists of six excitable channels intersecting at six junctions, four of which are subexcitable. The designs of the gates are verified using numerical integration of two-variable Oregonator equations.

  12. Alternative approach of developing all-optical Fredkin and Toffoli gates

    Science.gov (United States)

    Mandal, Dhoumendra; Mandal, Sumana; Garai, Sisir Kumar

    2015-09-01

    Reversible logic gates show potential roles in communication technology, and it has a wide area of applicability such as in sequential and combinational circuit of optical computing, optical signal processing, multi-valued logic operations, etc. because of its advantageous aspects of data-recovering capabilities, low power consumption, least power dissipation, faster speed of processing, less hardware complexity, etc. In a reversible logic gate not only the outputs can be determined from the inputs, but also the inputs can be uniquely recovered from the outputs. In this article an alternative approach has been made to develop three-input-output Fredkin and Toffoli gates using the frequency conversion property of semiconductor optical amplifier (SOA) and frequency-based beam routing by optical multiplexers and demultiplexers. Simulation results show the feasibility of our proposed scheme.

  13. Realization of an ultrafast all-optical Toffoli logic gate based on the phase relation between two second order nonlinear optical signals

    Science.gov (United States)

    Kazemi, Mehdi Mohammad; Mazaheri Tehrani, Alireza; Zeb Khan, Tahir; Namboodiri, Mahesh; Materny, Arnulf

    2015-12-01

    A Toffoli logic gate (CCNOT gate) is a universal reversible logic gate from which all other reversible gates can be constructed. It has a three-bit input and output. The goal of our work was to realize a Toffoli gate where all inputs and outputs are realized optically, which allows for ultrafast switching processes. We demonstrate experimentally that a Toffoli logic gate can be created based on nonlinear multi-wave interactions of light with matter. Using femtosecond laser pulses, the all-optical Toffoli gate is based on the coherence of the optical signals produced via the nonlinear optical processes. Sum frequency (SF) and second harmonic (SH) generations are combined in such a way so as to yield the complete truth table of the universal reversible logic gate.

  14. Two simple schemes for implementing Toffoli gate via atom-cavity field interaction in cavity quantum electrodynamics

    Institute of Scientific and Technical Information of China (English)

    Shao Xiao-Qiang; Chen Li; Zhang Shou

    2009-01-01

    This paper proposes two schemes for implementing three-qubit Toffoli gate with an atom (as target qubit) sent through a two-mode cavity (as control qubits). The first scheme is based on the large-detuning atom-cavity field interaction and the second scheme is based on the resonant atom-field interaction. Both the situations with and without cavity decay and atomic spontaneous emission are considered. The advantages and the experimental feasibility of these two schemes are discussed.

  15. All-optical four-bit Toffoli gate with possible implementation in solids

    Science.gov (United States)

    Grigoryan, G.; Chaltykyan, V.; Gazazyan, E.; Tikhova, O.

    2013-05-01

    We examine in detail the cyclic adiabatic population transfer methods for five-level diagrams in order to construct a four-bit universal reversible logic gate. We show that under certain conditions and sequence of turning on and off the laser pulses a five-level system may be reduced to an effective Λ-diagram.

  16. Unified approach to topological quantum computation with anyons: From qubit encoding to Toffoli gate

    Science.gov (United States)

    Xu, Haitan; Taylor, J. M.

    2011-07-01

    Topological quantum computation may provide a robust approach for encoding and manipulating information utilizing the topological properties of anyonic quasiparticle excitations. We develop an efficient means to map between dense and sparse representations of quantum information (qubits) and a simple construction of multiqubit gates, for all anyon models from Chern-Simons-Witten SU(2)k theory that support universal quantum computation by braiding (k⩾3,k≠4). In the process, we show how the constructions of topological quantum memory and gates for k=2,4 connect naturally to those for k⩾3,k≠4, unifying these concepts in a simple framework. Furthermore, we illustrate potential extensions of these ideas to other anyon models outside of Chern-Simons-Witten field theory.

  17. Building Toffoli Network for Reversible Logic Synthesis Based on Swapping Bit Strings

    CERN Document Server

    Babu, Hafiz Md Hasaan; Islam, Md Rafiqul; Jamal, Lafifa; Ferdaus, Abu Ahmed; Karim, Muhammad Rezaul; Mahmud, Abdullah Al

    2010-01-01

    In this paper, we have implemented and designed a sorting network for reversible logic circuits synthesis in terms of n*n Toffoli gates. The algorithm presented in this paper constructs a Toffoli Network based on swapping bit strings. Reduction rules are then applied by simple template matching and removing useless gates from the network. Random selection of bit strings and reduction of control inputs are used to minimize both the number of gates and gate width. The method produces near optimal results for up to 3-input 3-output circuits.

  18. N-qubit Entanglement Index and Classification

    CERN Document Server

    Wu, Y

    2002-01-01

    We show that all the N-qubit states can be classified as N entanglement classes each of which has an entanglement index $E=N-p=0,1,...,N-1$(E=0 corresponds to a fully separate class) where $p$ denotes number of groups for a partition of the positive integer N. In other words, for any partition $(n_1,n_2,...,n_p)$ of N with $n_j\\ge 1$ and $N=\\sum_{j=1}^{p}n_j$, the entanglement index for the corresponding state $\\rho_{n_1}\\bigotimes\\rho_{n_2}...\\bigotimes \\rho_{n_p}$ with $\\rho_{n_j}$ denoting a fully entangled state of $n_j-$qubits is $E(\\rho_{n_1}\\bigotimes\\rho_{n_2}...\\bigotimes \\rho_{n_p})=\\sum_{j=1}^{p}(n_j-1)=N-p$.

  19. Simulation of n-qubit quantum systems. V. Quantum measurements

    Science.gov (United States)

    Radtke, T.; Fritzsche, S.

    2010-02-01

    The FEYNMAN program has been developed during the last years to support case studies on the dynamics and entanglement of n-qubit quantum registers. Apart from basic transformations and (gate) operations, it currently supports a good number of separability criteria and entanglement measures, quantum channels as well as the parametrizations of various frequently applied objects in quantum information theory, such as (pure and mixed) quantum states, hermitian and unitary matrices or classical probability distributions. With the present update of the FEYNMAN program, we provide a simple access to (the simulation of) quantum measurements. This includes not only the widely-applied projective measurements upon the eigenspaces of some given operator but also single-qubit measurements in various pre- and user-defined bases as well as the support for two-qubit Bell measurements. In addition, we help perform generalized and POVM measurements. Knowing the importance of measurements for many quantum information protocols, e.g., one-way computing, we hope that this update makes the FEYNMAN code an attractive and versatile tool for both, research and education. New version program summaryProgram title: FEYNMAN Catalogue identifier: ADWE_v5_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADWE_v5_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 27 210 No. of bytes in distributed program, including test data, etc.: 1 960 471 Distribution format: tar.gz Programming language: Maple 12 Computer: Any computer with Maple software installed Operating system: Any system that supports Maple; the program has been tested under Microsoft Windows XP and Linux Classification: 4.15 Catalogue identifier of previous version: ADWE_v4_0 Journal reference of previous version: Comput. Phys. Commun

  20. Simulation of n-qubit quantum systems. III. Quantum operations

    Science.gov (United States)

    Radtke, T.; Fritzsche, S.

    2007-05-01

    often result in very large symbolic expressions that dramatically slow down the evaluation of measures or other quantities. In these cases, MAPLE's assume facility sometimes helps to reduce the complexity of symbolic expressions, but often only numerical evaluation is possible. Since the complexity of the FEYNMAN commands is very different, no general scaling law for the CPU time and memory usage can be given. No. of bytes in distributed program including test data, etc.: 799 265 No. of lines in distributed program including test data, etc.: 18 589 Distribution format: tar.gz Reasons for new version: While the previous program versions were designed mainly to create and manipulate the state of quantum registers, the present extension aims to support quantum operations as the essential ingredient for studying the effects of noisy environments. Does this version supersede the previous version: Yes Nature of the physical problem: Today, entanglement is identified as the essential resource in virtually all aspects of quantum information theory. In most practical implementations of quantum information protocols, however, decoherence typically limits the lifetime of entanglement. It is therefore necessary and highly desirable to understand the evolution of entanglement in noisy environments. Method of solution: Using the computer algebra system MAPLE, we have developed a set of procedures that support the definition and manipulation of n-qubit quantum registers as well as (unitary) logic gates and (nonunitary) quantum operations that act on the quantum registers. The provided hierarchy of commands can be used interactively in order to simulate and analyze the evolution of n-qubit quantum systems in ideal and nonideal quantum circuits.

  1. Geometric multiaxial representation of N -qubit mixed symmetric separable states

    Science.gov (United States)

    SP, Suma; Sirsi, Swarnamala; Hegde, Subramanya; Bharath, Karthik

    2017-08-01

    The study of N -qubit mixed symmetric separable states is a longstanding challenging problem as no unique separability criterion exists. In this regard, we take up the N -qubit mixed symmetric separable states for a detailed study as these states are of experimental importance and offer an elegant mathematical analysis since the dimension of the Hilbert space is reduced from 2N to N +1 . Since there exists a one-to-one correspondence between the spin-j system and an N -qubit symmetric state, we employ Fano statistical tensor parameters for the parametrization of the spin-density matrix. Further, we use a geometric multiaxial representation (MAR) of the density matrix to characterize the mixed symmetric separable states. Since the separability problem is NP-hard, we choose to study it in the continuum limit where mixed symmetric separable states are characterized by the P -distribution function λ (θ ,ϕ ) . We show that the N -qubit mixed symmetric separable states can be visualized as a uniaxial system if the distribution function is independent of θ and ϕ . We further choose a distribution function to be the most general positive function on a sphere and observe that the statistical tensor parameters characterizing the N -qubit symmetric system are the expansion coefficients of the distribution function. As an example for the discrete case, we investigate the MAR of a uniformly weighted two-qubit mixed symmetric separable state. We also observe that there exists a correspondence between the separability and classicality of states.

  2. Reversible circuit synthesis by genetic programming using dynamic gate libraries

    Science.gov (United States)

    Abubakar, Mustapha Y.; Jung, Low Tang; Zakaria, Nordin; Younes, Ahmed; Abdel-Aty, Abdel-Haleem

    2017-06-01

    We have defined a new method for automatic construction of reversible logic circuits by using the genetic programming approach. The choice of the gate library is 100% dynamic. The algorithm is capable of accepting all possible combinations of the following gate types: NOT TOFFOLI, NOT PERES, NOT CNOT TOFFOLI, NOT CNOT SWAP FREDKIN, NOT CNOT TOFFOLI SWAP FREDKIN, NOT CNOT PERES, NOT CNOT SWAP FREDKIN PERES, NOT CNOT TOFFOLI PERES and NOT CNOT TOFFOLI SWAP FREDKIN PERES. Our method produced near optimum circuits in some cases when a particular subset of gate types was used in the library. Meanwhile, in some cases, optimal circuits were produced due to the heuristic nature of the algorithm. We compared the outcomes of our method with several existing synthesis methods, and it was shown that our algorithm performed relatively well compared to the previous synthesis methods in terms of the output efficiency of the algorithm and execution time as well.

  3. Entanglement Equivalence of $N$-qubit Symmetric States

    CERN Document Server

    Mathonet, P; Godefroid, M; Lamata, L; Solano, E; Bastin, T

    2009-01-01

    We study the interconversion of multipartite symmetric $N$-qubit states under stochastic local operations and classical communication (SLOCC). We demonstrate that if two symmetric states can be connected with a nonsymmetric invertible local operation (ILO), then they belong necessarily to the separable, W, or GHZ entanglement class, establishing a practical method of discriminating subsets of entanglement classes. Furthermore, we prove that there always exists a symmetric ILO connecting any pair of symmetric $N$-qubit states equivalent under SLOCC, simplifying the requirements for experimental implementations of local interconversion of those states.

  4. Bounding the entanglement of N qubits with only four measurements

    Science.gov (United States)

    Hashemi Rafsanjani, S. M.; Broadbent, C. J.; Eberly, J. H.

    2013-12-01

    We introduce a measure for the genuinely N-partite (all-party) entanglement of N-qubit states using the trace distance metric and find an algebraic formula for the Greenberger-Horne-Zeilinger (GHZ)-diagonal states. We then use this formula to show how the all-party entanglement of experimentally produced GHZ states of an arbitrary number of qubits may be bounded with only four measurements.

  5. Genuinely multipartite concurrence of N-qubit X matrices

    OpenAIRE

    Rafsanjani, S. M. Hashemi; M. Huber; Broadbent, C. J.; Eberly, J. H

    2012-01-01

    We find an algebraic formula for the N-partite concurrence of N qubits in an X-matrix. X- matricies are density matrices whose only non-zero elements are diagonal or anti-diagonal when written in an orthonormal basis. We use our formula to study the dynamics of the N-partite entanglement of N remote qubits in generalized N-party Greenberger-Horne-Zeilinger (GHZ) states. We study the case when each qubit interacts with a partner harmonic oscillator. It is shown that only one type of GHZ state ...

  6. Genuinely multipartite concurrence of N-qubit X matrices

    Science.gov (United States)

    Hashemi Rafsanjani, S. M.; Huber, M.; Broadbent, C. J.; Eberly, J. H.

    2012-12-01

    We find an algebraic formula for the N-partite concurrence of N qubits in an X matrix. X matrices are density matrices whose only nonzero elements are diagonal or antidiagonal when written in an orthonormal basis. We use our formula to study the dynamics of the N-partite entanglement of N remote qubits in generalized N-party Greenberger-Horne-Zeilinger (GHZ) states. We study the case in which each qubit interacts with a local amplitude damping channel. It is shown that only one type of GHZ state loses its entanglement in finite time; for the rest, N-partite entanglement dies out asymptotically. Algebraic formulas for the entanglement dynamics are given in both cases. We directly confirm that the half-life of the entanglement is proportional to the inverse of N. When entanglement vanishes in finite time, the time at which entanglement vanishes can decrease or increase with N depending on the initial state. In the macroscopic limit, this time is independent of the initial entanglement.

  7. All-optical reversible logic gates with microresonators

    Science.gov (United States)

    Sethi, Purnima; Roy, Sukhdev; Topolancik, Juraj; Vollmer, Frank

    2011-08-01

    We present designs of all-optical reversible logic gates, namely, Feynman, Toffoli, Peres and Feynman Double gates, based on switching of a near-IR (1310/1550 nm) signal by low-power control signals at 532 nm and 405 nm, in optically controlled bacteriorhodopsin protein-coated silica microcavities coupled between two tapered single-mode fibers.

  8. All-versus-nothing proofs with n qubits distributed between m parties

    CERN Document Server

    Cabello, Adan; 10.1103/PhysRevA.81.042110

    2010-01-01

    All-versus-nothing (AVN) proofs show the conflict between Einstein, Podolsky, and Rosen's elements of reality and the perfect correlations of some quantum states. Given an n-qubit state distributed between m parties, we provide a method with which to decide whether this distribution allows an m-partite AVN proof specific for this state using only single-qubit measurements. We apply this method to some recently obtained n-qubit m-particle states. In addition, we provide all inequivalent AVN proofs with less than nine qubits and a minimum number of parties.

  9. Allowable Generalized Quantum Gates

    Institute of Scientific and Technical Information of China (English)

    LONG Gui-Lu; LIU Yang; WANG Chuan

    2009-01-01

    In this paper, we give the most general duality gates, or generalized quantum gates in duality quantum computers. Here we show by explicit construction that a n-bit duality quantum computer with d slits can be simulated perfectly with an ordinary quantum computer with n qubits and one auxiliary qudit. Using this model, we give the most general form of duality gates which is of the form Σ(d-1)(i=0)piUi, and the Pi's are complex numbers with module less or equal to I and constrained by |Σipi|≤1.

  10. On the geometry of a class of N-qubit entanglement monotones

    Energy Technology Data Exchange (ETDEWEB)

    Levay, Peter [Department of Theoretical Physics, Institute of Physics, Budapest University of Technology and Economics, Budafoki u. 8, H-1111 Budapest (Hungary)

    2005-10-14

    A family of N-qubit entanglement monotones invariant under stochastic local operations and classical communication (SLOCC) is defined. This class of entanglement monotones includes the well-known examples of the concurrence, the 3-tangle and some of the four-, five- and N-qubit SLOCC invariants introduced recently. The construction of these invariants is based on bipartite partitions of the Hilbert space in the form C{sup 2{sup }}N {approx_equal} C{sup L} x C{sup l} with L = 2{sup N-n} {>=} l = 2{sup n}. Such partitions can be given a nice geometrical interpretation in terms of Grassmannians Gr(L, l) of l-planes in C{sup L} that can be realized as the zero locus of quadratic polynomials in the complex projective space of suitable dimension via the Pluecker embedding. The invariants are neatly expressed in terms of the Pluecker coordinates of the Grassmannians.

  11. On the geometry of a class of N-qubit entanglement monotones

    CERN Document Server

    Levay, P

    2005-01-01

    A family of N-qubit entanglement monotones invariant under stochastic local operations and classical communication (SLOCC) is defined. This class of entanglement monotones includes the well-known examples of the concurrence, the three-tangle, and some of the four, five and N-qubit SLOCC invariants introduced recently. The construction of these invariants is based on bipartite partitions of the Hilbert space in the form ${\\bf C}^{2^N}\\simeq{\\bf C}^L\\otimes{\\bf C}^l$ with $L=2^{N-n}\\geq l=2^n$. Such partitions can be given a nice geometrical interpretation in terms of Grassmannians Gr(L,l) of l-planes in ${\\bf C}^L$ that can be realized as the zero locus of quadratic polinomials in the complex projective space of suitable dimension via the Plucker embedding. The invariants are neatly expressed in terms of the Plucker coordinates of the Grassmannian.

  12. Implementation of n-qubit Deutsch-Jozsa algorithm using resonant interaction in cavity QED

    Institute of Scientific and Technical Information of China (English)

    Wang Hong-Fu; Zhang Shou

    2008-01-01

    We propose a scheme to implement the n-qubit Deutsch-Jozsa algorithm based on resonant interaction between the atoms and a single-mode cavity. In the scheme, the resonant transitions between two ground states and one excited state of an atom are changed alternately by adjusting the cavity frequency appropriately, and the operations required to complete the algorithm can be significantly simplified following the increment of the number of qubits. The implementation of the scheme in experiment would show the full power of quantum algorithm and would be significative and important for more complicated quantum algorithm in cavity quantum electrodynamics.

  13. Generation of N-qubit W state with rf-SQUID qubits by adiabatic passage

    CERN Document Server

    Deng, Z J; Gao, K L

    2006-01-01

    A simple scheme is presented to generate n-qubit W state with rf-superconducting quantum interference devices (rf-SQUIDs) in cavity QED through adiabatic passage. Because of the achievable strong coupling for rf-SQUID qubits embedded in cavity QED, we can get the desired state with high success probability. Furthermore, the scheme is insensitive to position inaccuracy of the rf-SQUIDs. The numerical simulation shows that, by using present experimental techniques, we can achieve our scheme with very high success probability, and the fidelity could be eventually unity with the help of dissipation.

  14. Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

    Institute of Scientific and Technical Information of China (English)

    LIU Yu-ling; MAN Zhong-xiao; XIA Yun-jie

    2008-01-01

    A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.

  15. Monogamous nature of symmetric N-qubit states of the W class:Concurrence and negativity tangle

    Institute of Scientific and Technical Information of China (English)

    P. J. Geetha; K. O. Yashodamma; Sudha

    2015-01-01

    Using Majorana representation of symmetric N-qubit pure states, we have examined the monogamous nature of the family of states with two-distinct spinors, the W class of states. We have evaluated the N-concurrence tangle and showed that all the states in this family have vanishing concurrence tangle. The negativity tangle for the W class of states is shown to be non-zero, illustrating the fact that the concurrence tangle is always lesser than or equal to the negativity tangle in a pure N-qubit state.

  16. Teleporting N-qubit unknown atomic state by utilizing the Ⅴ-type three-level atom

    Institute of Scientific and Technical Information of China (English)

    ZHANG XinHua; YANG ZhiYong; XU PeiPei

    2009-01-01

    Realizing the teleportation of quantum state, especially the teleportation of N-qubit quantum state, is of great importance in quantum information. In this paper, Raman-interaction of the Ⅴ-type degenerate three-level atom and single-mode cavity field is studied by utilizing complete quantum theory. Then a new scheme for teleporting N-qubit unknown atomic state via Raman-interaction of the Ⅴ-type degen-erate three-level atom with a single-mode cavity field is proposed, which is based upon the complete quantum theory mentioned above.

  17. Teleporting N-qubit unknown atomic state by utilizing the V-type three-level atom

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Realizing the teleportation of quantum state, especially the teleportation of N-qubit quantum state, is of great importance in quantum information. In this paper, Raman-interaction of the V-type degenerate three-level atom and single-mode cavity field is studied by utilizing complete quantum theory. Then a new scheme for teleporting N-qubit unknown atomic state via Raman-interaction of the V-type degenerate three-level atom with a single-mode cavity field is proposed, which is based upon the complete quantum theory mentioned above.

  18. Multipartite quantum and classical correlations in symmetric n-qubit mixed states

    Science.gov (United States)

    Giorgi, Gian Luca; Campbell, Steve

    2016-11-01

    We discuss how to calculate genuine multipartite quantum and classical correlations in symmetric, spatially invariant, mixed n-qubit density matrices. We show that the existence of symmetries greatly reduces the amount of free parameters to be optimized in order to find the optimal measurement that minimizes the conditional entropy in the discord calculation. We apply this approach to the states exhibited dynamically during a thermodynamic protocol to extract maximum work. We also apply the symmetry criterion to a wide class of physically relevant cases of spatially homogeneous noise over multipartite entangled states. Exploiting symmetries we are able to calculate the non-local and genuine quantum features of these states and note some interesting properties.

  19. Multipartite entanglement indicators based on monogamy relations of n-qubit symmetric states.

    Science.gov (United States)

    Liu, Feng; Gao, Fei; Qin, Su-Juan; Xie, Shu-Cui; Wen, Qiao-Yan

    2016-02-04

    Constructed from Bai-Xu-Wang-class monogamy relations, multipartite entanglement indicators can detect the entanglement not stored in pairs of the focus particle and the other subset of particles. We investigate the k-partite entanglement indicators related to the αth power of entanglement of formation (αEoF) for k ≤ n, αϵ and n-qubit symmetric states. We then show that (1) The indicator based on αEoF is a monotonically increasing function of k. (2) When n is large enough, the indicator based on αEoF is a monotonically decreasing function of α, and then the n-partite indicator based on works best. However, the indicator based on 2 EoF works better when n is small enough.

  20. Measuring 4-local n-qubit observables could probabilistically solve PSPACE

    CERN Document Server

    Wocjan, P; Decker, T; Beth, T; Wocjan, Pawel; Janzing, Dominik; Decker, Thomas; Beth, Thomas

    2003-01-01

    We consider a hypothetical apparatus that implements measurements for arbitrary 4-local quantum observables A on n qubits. The apparatus implements the ``measurement algorithm'' after receiving a classical description of A. We show that a few precise measurements, applied to a basis state would provide a probabilistic solution of PSPACE problems. The error probability decreases exponentially with the number of runs if the measurement accuracy is of the order of the spectral gaps of A. Moreover, every decision problem which can be solved on a quantum computer in T time steps can be encoded into a 4-local observable such that the solution requires only measurements of accuracy O(1/T). Provided that BQPPSPACE, our result shows that efficient algorithms for precise measurements of general 4-local observables cannot exist. We conjecture that the class of physically existing interactions is large enough to allow the conclusion that precise energy measurements for general many-particle systems require control algori...

  1. Separability and entanglement of n-qubit and a qubit and a qudit using Hilbert-Schmidt decompositions

    Science.gov (United States)

    Ben-Aryeh, Y.; Mann, A.

    2016-08-01

    Hilbert-Schmidt (HS) decompositions are employed for analyzing systems of n-qubit, and a qubit with a qudit. Negative eigenvalues, obtained by partial-transpose (PT) plus local unitary (PTU) transformations for one qubit from the whole system, are used for indicating entanglement/separability. A sufficient criterion for full separability of the n-qubit and qubit-qudit systems is given. We use the singular value decomposition (SVD) for improving the criterion for full separability. General properties of entanglement and separability are analyzed for a system of a qubit and a qudit and n-qubit systems, with emphasis on maximally disordered subsystems (MDS) (i.e. density matrices for which tracing over any subsystem gives the unit density matrix). A sufficient condition that ρ (MDS) is not separable is that it has an eigenvalue larger than 1/d for a qubit and a qudit, and larger than 1/2n-1 for n-qubit system. The PTU transformation does not change the eigenvalues of the n-qubit MDS density matrices for odd n. Thus, the Peres-Horodecki (PH) criterion does not give any information about entanglement of these density matrices. The PH criterion may be useful for indicating inseparability for even n. The changes of the entanglement and separability properties of the GHZ state, the Braid entangled state and the W state by mixing them with white noise are analyzed by the use of the present methods. The entanglement and separability properties of the GHZ-diagonal density matrices, composed of mixture of 8GHZ density matrices with probabilities pi(i=1,2,…,8), is analyzed as function of these probabilities. In some cases, we show that the PH criterion is both sufficient and necessary.

  2. Enhanced architectures for room-temperature reversible logic gates in graphene

    Science.gov (United States)

    Dragoman, Daniela; Dragoman, Mircea

    2014-09-01

    We show that reversible two- and three-input logic gates, such as the universal Toffoli gate, can be implemented with three tilted gate electrodes patterned on a monolayer graphene flake. These reversible gates are based on the unique properties of ballistic charge carriers in graphene, which induce bandgaps in transmission for properly chosen potential barriers. The enhanced architectures for reversible logic gate implementation proposed in this paper offer a remarkable design simplification compared to standard approaches based on field-effect transistor circuits, as well as potential high-frequency operation.

  3. A nanomechanical Fredkin gate.

    Science.gov (United States)

    Wenzler, Josef-Stefan; Dunn, Tyler; Toffoli, Tommaso; Mohanty, Pritiraj

    2014-01-08

    Irreversible logic operations inevitably discard information, setting fundamental limitations on the flexibility and the efficiency of modern computation. To circumvent the limit imposed by the von Neumann-Landauer (VNL) principle, an important objective is the development of reversible logic gates, as proposed by Fredkin, Toffoli, Wilczek, Feynman, and others. Here, we present a novel nanomechanical logic architecture for implementing a Fredkin gate, a universal logic gate from which any reversible computation can be built. In addition to verifying the truth table, we demonstrate operation of the device as an AND, OR, NOT, and FANOUT gate. Excluding losses due to resonator dissipation and transduction, which will require significant improvement in order to minimize the overall energy cost, our device requires an energy of order 10(4) kT per logic operation, similar in magnitude to state-of-the-art transistor-based technologies. Ultimately, reversible nanomechanical logic gates could play a crucial role in developing highly efficient reversible computers, with implications for efficient error correction and quantum computing.

  4. The theoretic design of NMR pulses program of arbitrary N-qubit Grover's algorithm and the NMR experiment proof

    Institute of Scientific and Technical Information of China (English)

    杨晓冬; 缪希茄

    2002-01-01

    Grover's quantum searching algorithm is most widely studied in the current quantum computation research, and has been implemented experimentally by NMR (Nuclear Magnetic Resonance) technique. In this article, we design arbitrary N-qubit NMR pulses program of Grover's algorithm based on the multiple-quantum operator algebra theory and demonstrate 2-qubit pulses program experimentally. The result also proves the validity of the multiple-quantum operator algebra theory.

  5. Generation of bases with definite factorization for an n-qubit system and mutually unbiased sets construction

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, A; Romero, J L; Klimov, A B, E-mail: klimov@cencar.udg.m [Departamento de Fisica, Universidad de Guadalajara, Revolucion 1500, 44420 Guadalajara, Jal. (Mexico)

    2010-09-24

    We propose a systematic procedure to construct all the possible bases with a definite factorization structure (eigenstates of n commuting monomials constructed as products of Pauli operators) for an n-qubit system, as well as the possibility of collecting them into mutually unbiased sets. We also discuss an algorithm for the determination of basis separability and propose a criteria for complementarity between such bases. The results are applied to generate non-isomorphic complete sets of mutually unbiased bases.

  6. Lyapunov-Based Feedback Preparation of GHZ Entanglement of N-Qubit Systems.

    Science.gov (United States)

    Liu, Yanan; Kuang, Sen; Cong, Shuang

    2016-07-09

    The Greenberger-Horne-Zeilinger (GHZ) entangled states are a typical class of entangled states in multiparticle systems and play an important role in the applications of quantum communication and quantum computation. For a general quantum system of N qubits, degenerate measurement operators are often met, which cause the convergence obstacle in the state preparation or stabilization problem. This paper first generalizes the traditional quantum state continuous reduction theory to the case of a degenerate measurement operator and chooses a measurement operator for an arbitrarily given target GHZ entangled state, then presents a state stabilization control strategy based on the Lyapunov method and achieves the feedback preparation of the target GHZ state. In our stabilization strategy, we separate the target GHZ state and all the other GHZ states that often form the equilibrium points of the closed-loop system by dividing the state space into several different regions; and formally design a switching control law between the regions, which contains the control Hamiltonians to be constructed. By analyzing the stability of the closed-loop system in the different regions, we propose a systematic method for constructing the control Hamiltonians and solve the convergence problem caused by the degenerate measurement operator. The global stability of the whole closed-loop stochastic system is strictly proved. Also, we perform some simulation experiments on a three-qubit system and prepare a three-qubit GHZ entangled state. At the same time, the simulation results show the effectiveness of the switching control law and the construction method for the control Hamiltonians proposed in this paper.

  7. Emulación en hardware de circuitos cuánticos basados en compuertas Toffoli

    Directory of Open Access Journals (Sweden)

    Jorge E. Duarte-Sánchez

    2014-01-01

    Full Text Available Este trabajo presenta el diseño de una arquitectura hardware para emular circuitos cuánticos basados en compuertas tipo Toffoli con la cual se pueden emular circuitos de más de 50 qubits. El estado del sistema se obtiene procesando independientemente cada estado base mediante las funciones determinadas por las compuertas cuánticas para cada qubit; el tiempo requerido para la emulación crece exponencialmente en función del número de qubits que se usan solamente para generar una superposición de estados, y no en función de la cantidad total de qubits del sistema como ocurre cuando se usa la representación matricial convencional. Adicionalmente, se diseñó un arreglo de unidades de procesamiento para disminuir el tiempo de ejecución. Los resultados de síntesis permiten concluir que se requieren 9,35 segundos para emular la exponenciación modular de 8 bits, la cual utiliza 48 qubits, 155.312 compuertas cuánticas y requiere procesar 131.072 estados base. Estos resultados también permiten estimar que se pueden implementar 256 unidades de procesamiento de 52 qubits en el FPGA EP3C120F780I7.

  8. Implementing entangling gates via quantum walks through branching graphs

    Science.gov (United States)

    Solenov, Dmitry; Cavin, Thomas

    Efficient quantum gates are essential to quantum computing. It was found recently that quantum walks can enhance performance of quantum gates. We investigate how the propagation of a complicated, branching system can be solved analytically by first mapping it to linear chain. We found that certain types of systems, including systems of n qubits, can be algorithmically mapped to a system of disjoint linear chains. In particular, we found a solution for the 3 qubit system that performs either a trivial return walk or a return walk with a phase of pi introduced.

  9. Fredkin Gates for Finite-valued Reversible and Conservative Logics

    CERN Document Server

    Cattaneo, G; Leporini, R; Cattaneo, Gianpiero; Leporati, Alberto; Leporini, Roberto

    2002-01-01

    The basic principles and results of Conservative Logic introduced by Fredkin and Toffoli on the basis of a seminal paper of Landauer are extended to d-valued logics, with a special attention to three-valued logics. Different approaches to d-valued logics are examined in order to determine some possible universal sets of logic primitives. In particular, we consider the typical connectives of Lukasiewicz and Godel logics, as well as Chang's MV-algebras. As a result, some possible three-valued and d-valued universal gates are described which realize a functionally complete set of fundamental connectives.

  10. Universal quantum gates for hybrid system assisted by atomic ensembles embedded in double-sided optical cavities

    Science.gov (United States)

    Liu, A.-Peng; Cheng, Liu-Yong; Guo, Qi; Zhang, Shou; Zhao, Ming-Xia

    2017-01-01

    We propose deterministic schemes for controlled-NOT (CNOT), Toffoli, and Fredkin gates between flying photon qubits and the collective spin wave (magnon) of an atomic ensemble inside double-sided optical microcavities. All the gates can be accomplished with 100% success probability in principle and no additional qubit is required. Atomic ensemble is employed so that light-matter coupling is remarkably improved by collective enhancement. We qualified the performance of the gates and the results show that they can be faithfully constituted with current experimental techniques. PMID:28272548

  11. Synthesis of some three-qubit gates and their implementation in a three spins system coupled with Ising interaction

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The synthesis of the Toffoli gate, Fredkin gate, three-qubit Inversion-on-equality gate and D(α) gate, as well as their implementation in a three spins system coupled with Ising interaction are investigated. The sequences of the control pulse and the drift process to implement these gates are given. It is revealed that the implementation of some three-qubit gates in a circular spin chain is much better than in a linear spin chain, and every two measurements of the quantum computation complexity are not always consistent. It is significant to directly study the implementation of the multi-qubit gates and even more complicated components of quantum information processing without resorting to their synthesis.

  12. Realization of quantum gates with multiple control qubits or multiple target qubits in a cavity

    Science.gov (United States)

    Waseem, Muhammad; Irfan, Muhammad; Qamar, Shahid

    2015-06-01

    We propose a scheme to realize a three-qubit controlled phase gate and a multi-qubit controlled NOT gate of one qubit simultaneously controlling n-target qubits with a four-level quantum system in a cavity. The implementation time for multi-qubit controlled NOT gate is independent of the number of qubit. Three-qubit phase gate is generalized to n-qubit phase gate with multiple control qubits. The number of steps reduces linearly as compared to conventional gate decomposition method. Our scheme can be applied to various types of physical systems such as superconducting qubits coupled to a resonator and trapped atoms in a cavity. Our scheme does not require adjustment of level spacing during the gate implementation. We also show the implementation of Deutsch-Joza algorithm. Finally, we discuss the imperfections due to cavity decay and the possibility of physical implementation of our scheme.

  13. Universal quantum gates for photon-atom hybrid systems assisted by bad cavities.

    Science.gov (United States)

    Wang, Guan-Yu; Liu, Qian; Wei, Hai-Rui; Li, Tao; Ai, Qing; Deng, Fu-Guo

    2016-01-01

    We present two deterministic schemes for constructing a CNOT gate and a Toffoli gate on photon-atom and photon-atom-atom hybrid quantum systems assisted by bad cavities, respectively. They are achieved by cavity-assisted photon scattering and work in the intermediate coupling region with bad cavities, which relaxes the difficulty of their implementation in experiment. Also, bad cavities are feasible for fast quantum operations and reading out information. Compared with previous works, our schemes do not need any auxiliary qubits and measurements. Moreover, the schematic setups for these gates are simple, especially that for our Toffoli gate as only a quarter wave packet is used to interact the photon with each of the atoms every time. These atom-cavity systems can be used as the quantum nodes in long-distance quantum communication as their relatively long coherence time is suitable for multi-time operations between the photon and the system. Our calculations show that the average fidelities and efficiencies of our two universal hybrid quantum gates are high with current experimental technology.

  14. Designing High-Fidelity Single-Shot Three-Qubit Gates: A Machine-Learning Approach

    Science.gov (United States)

    Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C.

    2016-11-01

    Three-qubit quantum gates are key ingredients for quantum error correction and quantum-information processing. We generate quantum-control procedures to design three types of three-qubit gates, namely Toffoli, controlled-not-not, and Fredkin gates. The design procedures are applicable to a system comprising three nearest-neighbor-coupled superconducting artificial atoms. For each three-qubit gate, the numerical simulation of the proposed scheme achieves 99.9% fidelity, which is an accepted threshold fidelity for fault-tolerant quantum computing. We test our procedure in the presence of decoherence-induced noise and show its robustness against random external noise generated by the control electronics. The three-qubit gates are designed via the machine-learning algorithm called subspace-selective self-adaptive differential evolution.

  15. Hybrid quantum gates between flying photon and diamond nitrogen-vacancy centers assisted by optical microcavities

    Science.gov (United States)

    Wei, Hai-Rui; Lu Long, Gui

    2015-01-01

    Hybrid quantum gates hold great promise for quantum information processing since they preserve the advantages of different quantum systems. Here we present compact quantum circuits to deterministically implement controlled-NOT, Toffoli, and Fredkin gates between a flying photon qubit and diamond nitrogen-vacancy (NV) centers assisted by microcavities. The target qubits of these universal quantum gates are encoded on the spins of the electrons associated with the diamond NV centers and they have long coherence time for storing information, and the control qubit is encoded on the polarizations of the flying photon and can be easily manipulated. Our quantum circuits are compact, economic, and simple. Moreover, they do not require additional qubits. The complexity of our schemes for universal three-qubit gates is much reduced, compared to the synthesis with two-qubit entangling gates. These schemes have high fidelities and efficiencies, and they are feasible in experiment. PMID:26271899

  16. Universal Fault-Tolerant Gates on Concatenated Stabilizer Codes

    Directory of Open Access Journals (Sweden)

    Theodore J. Yoder

    2016-09-01

    Full Text Available It is an oft-cited fact that no quantum code can support a set of fault-tolerant logical gates that is both universal and transversal. This no-go theorem is generally responsible for the interest in alternative universality constructions including magic state distillation. Widely overlooked, however, is the possibility of nontransversal, yet still fault-tolerant, gates that work directly on small quantum codes. Here, we demonstrate precisely the existence of such gates. In particular, we show how the limits of nontransversality can be overcome by performing rounds of intermediate error correction to create logical gates on stabilizer codes that use no ancillas other than those required for syndrome measurement. Moreover, the logical gates we construct, the most prominent examples being Toffoli and controlled-controlled-Z, often complete universal gate sets on their codes. We detail such universal constructions for the smallest quantum codes, the 5-qubit and 7-qubit codes, and then proceed to generalize the approach. One remarkable result of this generalization is that any nondegenerate stabilizer code with a complete set of fault-tolerant single-qubit Clifford gates has a universal set of fault-tolerant gates. Another is the interaction of logical qubits across different stabilizer codes, which, for instance, implies a broadly applicable method of code switching.

  17. Reversible logic gates based on enzyme-biocatalyzed reactions and realized in flow cells: a modular approach.

    Science.gov (United States)

    Fratto, Brian E; Katz, Evgeny

    2015-05-18

    Reversible logic gates, such as the double Feynman gate, Toffoli gate and Peres gate, with 3-input/3-output channels are realized using reactions biocatalyzed with enzymes and performed in flow systems. The flow devices are constructed using a modular approach, where each flow cell is modified with one enzyme that biocatalyzes one chemical reaction. The multi-step processes mimicking the reversible logic gates are organized by combining the biocatalytic cells in different networks. This work emphasizes logical but not physical reversibility of the constructed systems. Their advantages and disadvantages are discussed and potential use in biosensing systems, rather than in computing devices, is suggested. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Entangling gates in even Euclidean lattices such as Leech lattice

    CERN Document Server

    Planat, Michel

    2010-01-01

    We point out a organic relationship between real entangling n-qubit gates of quantum computation and the group of automorphisms of even Euclidean lattices of the corresponding dimension 2n. The type of entanglement that is found in the gates/generators of Aut() depends on the lattice. In particular, we investigate Zn lattices, Barnes-Wall lattices D4, E8, 16 (associated to n = 2, 3 and 4 qubits), and the Leech lattices h24 and 24 (associated to a 3-qubit/qutrit system). Balanced tripartite entanglement is found to be a basic feature of Aut(), a nding that bears out our recent work related to the Weyl group of E8 [1, 2].

  19. Adiabatic passage for one-step generation of n-qubit Greenberger-Horne-Zeilinger states of superconducting qubits via quantum Zeno dynamics

    Science.gov (United States)

    Wu, Jin-Lei; Song, Chong; Xu, Jing; Yu, Lin; Ji, Xin; Zhang, Shou

    2016-09-01

    An efficient scheme is proposed for generating n-qubit Greenberger-Horne-Zeilinger states of n superconducting qubits separated by (n-1) coplanar waveguide resonators capacitively via adiabatic passage with the help of quantum Zeno dynamics in one step. In the scheme, it is not necessary to precisely control the time of the whole operation and the Rabi frequencies of classical fields because of the introduction of adiabatic passage. The numerical simulations for three-qubit Greenberger-Horne-Zeilinger state show that the scheme is insensitive to the dissipation of the resonators and the energy relaxation of the superconducting qubits. The three-qubit Greenberger-Horne-Zeilinger state can be deterministically generated with comparatively high fidelity in the current experimental conditions, though the scheme is somewhat sensitive to the dephasing of superconducting qubits.

  20. On Universal Gate Libraries and Generic Minimal Two-qubit Quantum Circuits

    CERN Document Server

    Shende, V V; Bullock, S S; Shende, Vivek V.; Markov, Igor L.; Bullock, Stephen S.

    2003-01-01

    We show how to implement exactly an arbitrary two-qubit unitary operation in several universal gate libraries using the smallest possible number of gates. To this end, we prove that n-qubit circuits using CNOT and one-qubit gates require at least ceil((4^n - 3n -1)/4) CNOT gates in the worst case. For two-qubit operators, this yields a lower bound of three gates, which we match with an upper bound of three gates. Using quantum circuit identities, we improve an earlier lower bound of 17 elementary gates by Bullock and Markov to 18, and their upper bound of 23 elementary gates to 18. We also improve upon the generic circuit with six CNOT gates by Zhang et al. (our circuit uses three), and that by Vidal and Dawson with 11 basic gates (we use 10). Given the available results, it appears that some universal gate libraries are at a disadvantage, at least in the sense that no construction is known to produce smallest possible circuits.

  1. Fredkin gates for finite-valued reversible and conservative logics

    Energy Technology Data Exchange (ETDEWEB)

    Cattaneo, G; Leporati, A; Leporini, R [Dipartimento di Informatica, Sistemistica e Comunicazione, Universita degli Studi di Milano - Bicocca, via Bicocca degli Arcimboldi 8, 20126 Milan (Italy)

    2002-11-22

    The basic principles and results of conservative logic introduced by Fredkin and Toffoli in 1982, on the basis of a seminal paper of Landauer, are extended to d-valued logics, with a special attention to three-valued logics. Different approaches to d-valued logics are examined in order to determine some possible universal sets of logic primitives. In particular, we consider the typical connectives of Lukasiewicz and Goedel logics, as well as Chang's MV-algebras. As a result, some possible three-valued and d-valued universal gates are described which realize a functionally complete set of fundamental connectives. Two no-go theorems are also proved.

  2. Implementation of quantum controlled phase gate and preparation of multiparticle entanglement in cavity QED

    Institute of Scientific and Technical Information of China (English)

    Wu Xi; Chen Zhi-Hua; Zhang Yong; Chen Yue-Hua; Ye Ming-Yong; Lin Xiu-Min

    2011-01-01

    Schemes are presented for realizing quantum controlled phase gate and preparing an N-qubit W-like state, which are based on the large-detuned interaction among three-state atoms, dual-mode cavity and a classical pulse. In particular, a class of W states that can be used for perfect teleportation and superdense coding is generated by only one step.Compared with the previous schemes, cavity decay is largely suppressed because the cavity is only virtually excited and always in the vacuum state and the atomic spontaneous emission is strongly restrained due to a large atom-field detuning.

  3. Wavelet analisys and HHG in nanorings Their applications in logic gates and memory mass devices

    CERN Document Server

    Cricchio, Dario

    2015-01-01

    We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning boolean values to different state of the incident laser field and to the emitted signals, we can create logic gates such as OR, XOR and AND. We also show the possibility to make logic circuits such as half-adder and full-adder using one and two nanoring respectively. Using two nanorings we made the Toffoli gate. Finally we use the final angular momentum acquired by the electron to store information and hence show the possibility to use an array of nanorings as a mass memory device.

  4. Implementation of all-optical reversible logic gate based on holographic laser induced grating using azo-dye doped polymers

    Science.gov (United States)

    Forsati, Rana; Valipour Ebrahimi, Sara; Navi, Keivan; Mohajerani, Ezeddin; Jashnsaz, Hossein

    2013-02-01

    Increasing demand for power reduction in computer systems has led to new trends in computations and computer design including reversible computing. Its main aim is to eliminate power dissipation in logical elements but can have some other advantages such as data security and error prevention. Because of interesting properties of reversible computing, implementing computing devices with reversible manner is the only way to make the reversible computing a reality. In recent years, reversible logic has turned out to be a promising computing paradigm having application in CMOS, nanotechnology, quantum computing and optical computing. In this paper, we propose and realize a novel implementation of Toffoli gate in all-optical domain. We have explained its principle of operations and described an actual experimental implementation. The all-optical reversible gate presented in this paper will be useful in different applications such as arithmetic and logical operations in the domain of reversible logic-based computing.

  5. Complete all-optical processing polarization-based binary logic gates and optical processors.

    Science.gov (United States)

    Zaghloul, Y A; Zaghloul, A R M

    2006-10-16

    -input gates, and sequential and non-sequential Boolean expressions are presented and discussed. The operation of each design is simply understood by a bullet train traveling at the speed of light on a railroad system preconditioned by the crossover states predetermined by the control inputs. The presented designs allow for optical processing of the information eliminating the need to convert it, back and forth, to an electronic signal for processing purposes. All gates with a truth table, including for example Fredkin, Toffoli, testable reversible logic, and threshold logic gates, can be designed and implemented using the railroad architecture. That includes any future gates not known today. Those designs and the quantum gates are not discussed in this paper.

  6. All-Optical Reversible Logic Gates with Optically Controlled Bacteriorhodopsin Protein-Coated Microresonators

    Directory of Open Access Journals (Sweden)

    Sukhdev Roy

    2012-01-01

    Full Text Available We present designs of all-optical reversible gates, namely, Feynman, Toffoli, Peres, and Feynman double gates, with optically controlled microresonators. To demonstrate the applicability, a bacteriorhodopsin protein-coated silica microcavity in contact between two tapered single-mode fibers has been used as an all-optical switch. Low-power control signals (<200 μW at 532 nm and at 405 nm control the conformational states of the protein to switch a near infrared signal laser beam at 1310 or 1550 nm. This configuration has been used as a template to design four-port tunable resonant coupler logic gates. The proposed designs are general and can be implemented in both fiber-optic and integrated-optic formats and with any other coated photosensitive material. Advantages of directed logic, high Q-factor, tunability, compactness, low-power control signals, high fan-out, and flexibility of cascading switches in 2D/3D architectures to form circuits make the designs promising for practical applications.

  7. Quantum Gates and Circuits

    CERN Document Server

    Di Vincenzo, D P

    1997-01-01

    A historical review is given of the emergence of the idea of the quantum logic gate from the theory of reversible Boolean gates. I highlight the quantum XOR or controlled NOT as the fundamental two-bit gate for quantum computation. This gate plays a central role in networks for quantum error correction.

  8. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  9. 经由非共振腔加经典场产生N比特的簇态%Generation of N-qubit cluster states via nonresonant cavity and classical field

    Institute of Scientific and Technical Information of China (English)

    张世军; 马驰; 叶柳

    2008-01-01

    提出一个非常简单的实验可行的方案.这个方案的原子-腔场系统由两个三能级原子和一个非共振腔组成,在原子与腔场相互作用的过程中,同时注入经典场,由这个系统组成的方案可以很容易实现N比特原子簇态.在原子与腔场的作用过程中,因为腔场一直处于激发态,所以不需要在原子和腔场之间传送量子信息.这个方案有两大优点.一、不需要任何测量就能实现;二、对于原子与非共振腔场相互作用同时加经典场这个系统,他们的相互作用时间不会随着原子的数目增加而改变.这个方案在当前技术下很有可能被实现.%A simple experimental scheme to generate N-qubit atom cluster states is proposed. The task can be realized through the interaction between two three-level atoms within a nonresonant cavity and meanwhile driven by a classical field. During the interaction time, the cavity field is only virtually excited, and no quantum information transfer between the atoms and the cavity is required. The scheme is implemented without any measurement. Time of implementation of the protocol does not change with the increase of the number of qubits. Our scheme can be realized under current technology.

  10. Ising耦合体系中量子傅里叶变换的优化%Time-optimized quantum QFT gate in an Ising coupling system

    Institute of Scientific and Technical Information of China (English)

    2015-01-01

    Quantum Fourier transform (QFT) is a quantum analogue of the classical discrete Fourier transform. It is a fundamental quantum gate in quantum algorithms which has an exponential advantage over the classical computation and has been excessively studied. Normally, an n-qubit quantum Fourier transform could be resolved into the tensor product of n single-qubit operations, and each operation could be implemented by a Hadamard gate and a controlled phase gate. Then the complexity of an n-qubit QFT is of order O(n2). To reduce the complexity of quantum operations, optimal control (OC) method has recently been used successfully to find the minimum time for implementing a quantum operation. Up to now, two types of quantum optimal control methods have been presented, i.e. analytical and numerical methods. The analytical approach is to change the problem of efficient synthesis of unitary transformations into the geometrical one of finding the shortest paths. Numerical optimal control procedures are based on the gradient methods (GRAPE, Gradient Ascent Pulse Engineering) and Krotov methods. Notable application mainly focus on nuclear magnetic resonance fields, including imaging, liquid-state NMR, solid-state NMR, and NMR quantum computation. One obvious advantage of optimal control NMR quantum computation is that the OC unitary evolution transformation pulse sequences are normally shorter than the conventional corresponding ones. Here we use the optimal control method to find the minimum duration for implementing QFT quantum gate. A linear spin chain with nearest-neighbor Ising interaction is used to find the optimization. And the optimized pulse sequence is experimentally demonstrated on an NMR quantum information processor. By using optimal control method with numerical calculation, a three-qubit QFT in an indirect-linear-coupling chain system is optimized. The duration of the OC QFT is obviously shorter than that of conventional approaches. The OC pulse sequence has been

  11. Slide Gate Bricks

    Institute of Scientific and Technical Information of China (English)

    Wang Jing; Peng Xigao

    2010-01-01

    @@ 1 Scope This standard specifies the classification,shape,dimension,technical requirements,test methods,quality appraisal procedures,packing,marking,transportation,storage,and quality certificate of slide gate bricks.

  12. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  13. The Gates at Pipe Spring National Monument, Arizona (gates)

    Data.gov (United States)

    National Park Service, Department of the Interior — This is an Arc/Info coverage consisting of 7 points representing gates at Pipe Spring National Monument, Arizona. The gates were collected by a Trimble GeoXT GPS...

  14. Amplifying genetic logic gates.

    Science.gov (United States)

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  15. Scanning Gate Spectroscopy on Nanoclusters

    OpenAIRE

    Gurevich, L.; Canali, L.; Kouwenhoven, L.P.

    1999-01-01

    A gated probe for scanning tunnelling microscopy (STM) has been developed. The probe extends normal STM operations by means of an additional electrode fabricated next to the tunnelling tip. The extra electrode does not make contact with the sample and can be used as a gate. We report on the recipe used for fabricating the tunnelling tip and the gate electrode on a silicon nitride cantilever. We demonstrate the functioning of the scanning gate probes by performing single-electron tunnelling sp...

  16. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  17. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  18. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  19. High permittivity gate dielectric materials

    CERN Document Server

    2013-01-01

    "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."

  20. Noise Gating Solar Images

    Science.gov (United States)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  1. A quantum Fredkin gate.

    Science.gov (United States)

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

  2. Impact of gate geometry on ionic liquid gated ionotronic systems

    Science.gov (United States)

    Wong, A. T.; Noh, J. H.; Pudasaini, P. R.; Wolf, B.; Balke, N.; Herklotz, A.; Sharma, Y.; Haglund, A. V.; Dai, S.; Mandrus, D.; Rack, P. D.; Ward, T. Z.

    2017-04-01

    Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard "side gate" 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. These findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

  3. Gate complexity using Dynamic Programming

    OpenAIRE

    Sridharan, Srinivas; Gu, Mile; James, Matthew R.

    2008-01-01

    The relationship between efficient quantum gate synthesis and control theory has been a topic of interest in the quantum control literature. Motivated by this work, we describe in the present article how the dynamic programming technique from optimal control may be used for the optimal synthesis of quantum circuits. We demonstrate simulation results on an example system on SU(2), to obtain plots related to the gate complexity and sample paths for different logic gates.

  4. Localizing a gate in CFTR

    OpenAIRE

    Gao, Xiaolong; Hwang, Tzyh-Chang

    2015-01-01

    Cystic fibrosis transmembrane conductance regulator (CFTR), albeit a bona fide member of the ATP-binding cassette (ABC) transporter superfamily, is an ATP-gated chloride channel. However, phylogenetic analysis has led to a popular conjecture that CFTR evolves from a primordial ABC exporter by simply degenerating the cytoplasmic gate. This degraded transporter hypothesis predicts that CFTR’s gate is located at the external end of the substrate translocation pathway as the one documented in the...

  5. GATE TYPE SELECTION BASED ON FUZZY MAPPING

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Gate type selection is very important for mould design. Improper gate type may lead to poor product quality and low production efficiency. Although numerical simulation approach could be used to optimize gate location, the determination of gate type is still up to designers' experience. A novel method for selecting gate type based on fuzzy logic is proposed. The proposed methodology follows three steps:Design requirements for gate is extracted and generalized; Possible gate types (design schemes) are presented; The fuzzy mapping relationship between gate design requirements and gate design scheme is established based on fuzzy composition and fuzzy relation transition matrices that are assigned by domain experts.

  6. Expert Oracle GoldenGate

    CERN Document Server

    Prusinski, Ben; Chung, Richard

    2011-01-01

    Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

  7. Piezoconductivity of gated suspended graphene

    NARCIS (Netherlands)

    Medvedyeva, M.V.; Blanter, Y.M.

    2011-01-01

    We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism, whereas the gate causes inhomogeneous density redistribution. We

  8. Works close to gate B

    CERN Multimedia

    GS Department

    2011-01-01

    In connection to the TRAM project, drainage works will be carried out close to gate B until the end of next week. In order to avoid access problems, if arriving by car, please use gates A and E. Department of General Infrastructure Services (GS) GS-SE Group

  9. Cooperative gating between ion channels.

    Science.gov (United States)

    Choi, Kee-Hyun

    2014-01-01

    Cooperative gating between ion channels, i.e. the gating of one channel directly coupled to the gating of neighboring channels, has been observed in diverse channel types at the single-channel level. Positively coupled gating could enhance channel-mediated signaling while negative coupling may effectively reduce channel gating noise. Indeed, the physiological significance of cooperative channel gating in signal transduction has been recognized in several in vivo studies. Moreover, coupled gating of ion channels was reported to be associated with some human disease states. In this review, physiological roles for channel cooperativity and channel clustering observed in vitro and in vivo are introduced, and stimulation-induced channel clustering and direct channel cross linking are suggested as the physical mechanisms of channel assembly. Along with physical clustering, several molecular mechanisms proposed as the molecular basis for functional coupling of neighboring channels are covered: permeant ions as a channel coupling mediator, concerted channel activation through the membrane, and allosteric mechanisms. Also, single-channel analysis methods for cooperative gating such as the binomial analysis, the variance analysis, the conditional dwell time density analysis, and the maximum likelihood fitting analysis are reviewed and discussed.

  10. Penn State DOE GATE Program

    Energy Technology Data Exchange (ETDEWEB)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  11. Logic Gates with Ion Transistors

    CERN Document Server

    Grebel, Haim

    2016-01-01

    Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If we ever want to create artificial bio-chemical circuitry, then we need to move a step further towards ion-logic circuitry. Here we demonstrate ion XOR and OR gates with electrochemical cells, and specifically, with two wet-cell batteries. In parallel to vacuum tubes, the batteries were modified to include a third, permeable and conductive mid electrode (the gate), which was placed between the anode and cathode in order to affect the ion flow through it. The key is to control the cell output with a much smaller biasing power, as demonstrated here. A successful demonstration points to self-powered ion logic gates.

  12. Reversible logic gates on Physarum Polycephalum

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, Andrew [University of Information Technology and Management, Sucharskiego 2, Rzeszow, 35-225 (Poland)

    2015-03-10

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum.

  13. Demonstration of a Quantum Nondemolition Sum Gate

    DEFF Research Database (Denmark)

    Yoshikawa, J.; Miwa, Y.; Huck, Alexander;

    2008-01-01

    The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature compo...

  14. Randomized benchmarking of multiqubit gates.

    Science.gov (United States)

    Gaebler, J P; Meier, A M; Tan, T R; Bowler, R; Lin, Y; Hanneke, D; Jost, J D; Home, J P; Knill, E; Leibfried, D; Wineland, D J

    2012-06-29

    We describe an extension of single-qubit gate randomized benchmarking that measures the error of multiqubit gates in a quantum information processor. This platform-independent protocol evaluates the performance of Clifford unitaries, which form a basis of fault-tolerant quantum computing. We implemented the benchmarking protocol with trapped ions and found an error per random two-qubit Clifford unitary of 0.162±0.008, thus setting the first benchmark for such unitaries. By implementing a second set of sequences with an extra two-qubit phase gate inserted after each step, we extracted an error per phase gate of 0.069±0.017. We conducted these experiments with transported, sympathetically cooled ions in a multizone Paul trap-a system that can in principle be scaled to larger numbers of ions.

  15. Bill Gates vil redde Folkeskolen

    DEFF Research Database (Denmark)

    Fejerskov, Adam Moe

    2014-01-01

    Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet......Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

  16. Bill Gates vil redde Folkeskolen

    DEFF Research Database (Denmark)

    Fejerskov, Adam Moe

    2014-01-01

    Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

  17. Quantum gates with topological phases

    CERN Document Server

    Ionicioiu, R

    2003-01-01

    We investigate two models for performing topological quantum gates with the Aharonov-Bohm (AB) and Aharonov-Casher (AC) effects. Topological one- and two-qubit Abelian phases can be enacted with the AB effect using charge qubits, whereas the AC effect can be used to perform all single-qubit gates (Abelian and non-Abelian) for spin qubits. Possible experimental setups suitable for a solid state implementation are briefly discussed.

  18. Gating a ferromagnetic semiconductor

    Science.gov (United States)

    Bove, A.; Altomare, F.; Kundtz, N.; Chang, A. M.; Cho, Y. J.; Liu, X.; Furdyna, J.

    2007-03-01

    Ferromagnetic semiconductors have the potential of revolutionizing the way current electronic devices work: more so, because they are compatible with current fabrication lines and can easily be integrated with today's technology. Particular interest lies in III-V Diluted Magnetic Semiconductor (DMS), where the ferromagnetism is hole-mediated and the Curie temperature can therefore be tuned by changing the concentration of free carriers. In these systems, most of the effort is currently applied toward the fabrication of devices working at room-temperature: this implies high carrier density accompanied by low mobility and short mean free path. We will report our results for a ferromagnetic 2DHG system with low carrier density (˜3.4E12 cm-2) and mobility (˜ 1000 cm^2/(Vs)), and we will discuss the effects of local gating in light of possible applications to the fabrication of ferromagnetic quantum dots. T. Dietl et al., Phys. Rev. B 63, 195205 (2001). H. Ohno et al., Nature 408, 944 (2000)

  19. Latest design of gate valves

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  20. Upper bounds for reversible circuits based on Young subgroups

    DEFF Research Database (Denmark)

    Abdessaied, Nabila; Soeken, Mathias; Thomsen, Michael Kirkedal;

    2014-01-01

    We present tighter upper bounds on the number of Toffoli gates needed in reversible circuits. Both multiple controlled Toffoli gates and mixed polarity Toffoli gates have been considered for this purpose. The calculation of the bounds is based on a synthesis approach based on Young subgroups that...... that results in circuits using a more generalized gate library. Starting from an upper bound for this library we derive new bounds which improve the existing bound by around 77%. © 2014 Elsevier B.V. All rights reserved....

  1. Decoherence of an $n$-qubit quantum memory

    CERN Document Server

    Gorin, T; Seligman, T H; Gorin, Thomas; Pineda, Carlos; Seligman, Thomas H.

    2007-01-01

    We analyze decoherence of a quantum register in the absence of non-local operations i.e. of $n$ non-interacting qubits coupled to an environment. The problem is solved in terms of a sum rule which implies linear scaling in the number of qubits. Each term involves a single qubit and its entanglement with the remaining ones. Two conditions are essential: first decoherence must be small and second the coupling of different qubits must be uncorrelated in the interaction picture. We apply the result to a random matrix model, and illustrate its reach considering a GHZ state coupled to a spin bath.

  2. Decoherence of an n-Qubit Quantum Memory

    Science.gov (United States)

    Gorin, Thomas; Pineda, Carlos; Seligman, Thomas H.

    2007-12-01

    We analyze decoherence of a quantum register in the absence of nonlocal operations, i.e., n noninteracting qubits coupled to an environment. The problem is solved in terms of a sum rule which implies linear scaling in the number of qubits. Each term involves a single qubit and its entanglement with the remaining ones. Two conditions are essential: first, decoherence must be small, and second, the coupling of different qubits must be uncorrelated in the interaction picture. We apply the result to a random matrix model, and illustrate its reach considering a Greenberger-Horne-Zeilinger state coupled to a spin bath.

  3. New opening hours of the gates

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  4. Ionic thermoelectric gating organic transistors

    Science.gov (United States)

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

  5. Ionic thermoelectric gating organic transistors

    Science.gov (United States)

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (~100 μV K-1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (~10,000 μV K-1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins.

  6. Localizing a gate in CFTR.

    Science.gov (United States)

    Gao, Xiaolong; Hwang, Tzyh-Chang

    2015-02-24

    Experimental and computational studies have painted a picture of the chloride permeation pathway in cystic fibrosis transmembrane conductance regulator (CFTR) as a short narrow tunnel flanked by wider inner and outer vestibules. Although these studies also identified a number of transmembrane segments (TMs) as pore-lining, the exact location of CFTR's gate(s) remains unknown. Here, using a channel-permeant probe, [Au(CN)2](-), we provide evidence that CFTR bears a gate that coincides with the predicted narrow section of the pore defined as residues 338-341 in TM6. Specifically, cysteines introduced cytoplasmic to the narrow region (i.e., positions 344 in TM6 and 1148 in TM12) can be modified by intracellular [Au(CN)2](-) in both open and closed states, corroborating the conclusion that the internal vestibule does not harbor a gate. However, cysteines engineered to positions external to the presumed narrow region (e.g., 334, 335, and 337 in TM6) are all nonreactive toward cytoplasmic [Au(CN)2](-) in the absence of ATP, whereas they can be better accessed by extracellular [Au(CN)2](-) when the open probability is markedly reduced by introducing a second mutation, G1349D. As [Au(CN)2](-) and chloride ions share the same permeation pathway, these results imply a gate is situated between amino acid residues 337 and 344 along TM6, encompassing the very segment that may also serve as the selectivity filter for CFTR. The unique position of a gate in the middle of the ion translocation pathway diverges from those seen in ATP-binding cassette (ABC) transporters and thus distinguishes CFTR from other members of the ABC transporter family.

  7. Respiratory gating in cardiac PET

    DEFF Research Database (Denmark)

    Lassen, Martin Lyngby; Rasmussen, Thomas; Christensen, Thomas E

    2017-01-01

    BACKGROUND: Respiratory motion due to breathing during cardiac positron emission tomography (PET) results in spatial blurring and erroneous tracer quantification. Respiratory gating might represent a solution by dividing the PET coincidence dataset into smaller respiratory phase subsets. The aim...... stress (82)RB-PET. Respiratory rates and depths were measured by a respiratory gating system in addition to registering actual respiratory rates. Patients undergoing adenosine stress showed a decrease in measured respiratory rate from initial to later scan phase measurements [12.4 (±5.7) vs 5.6 (±4.......7) min(-1), P PET...

  8. Reversible logic gate using adiabatic superconducting devices

    National Research Council Canada - National Science Library

    Takeuchi, N; Yamanashi, Y; Yoshikawa, N

    2014-01-01

    .... However, until now, no practical reversible logic gates have been demonstrated. One of the problems is that reversible logic gates must be built by using extremely energy-efficient logic devices...

  9. BEARING FORCES OF EMERGENCY GATE DURING SHUTOFF

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    For an emergency gate in a surge tank, forces acting on the gate were systematically tested and analyzed, including pulling forces resulted from water hammer because of the sudden rejection of all loads in turbine units under different gate levels, and forces during the process of gate shutoff under the conditions of different number of running turbine units. Besides, for the pulling force on the top of gate, their variation processes with time and extent of gate opening were also tested. It is shown that the calculated value of gate pulling force agrees on the whole with the tested one. The results indicate that the emergency gate in the extraordinary large surge tank of WWS hydropower station is safe under the above testing conditions. The related data in the present paper are helpful for the study on an emergency in a sure tank.

  10. Gating Technology for Vertically Parted Green Sand Moulds

    DEFF Research Database (Denmark)

    Larsen, Per

    Gating technology for vertically parted green sand moulds. Literature study of different ways of designing gating systems.......Gating technology for vertically parted green sand moulds. Literature study of different ways of designing gating systems....

  11. Gate-enclosed NMOS transistors

    Institute of Scientific and Technical Information of China (English)

    Fan Xue; Li Ping; Li Wei; Zhang Bin; Xie Xiaodong; Wang Gang; Hu Bin; Zhai Yahong

    2011-01-01

    In order to quantitatively compare the design cost and performance of various gate styles,NMOS transistors with two-edged,annular and ring gate layouts were designed and fabricated by a commercial 0.35 μm CMOS process.By comparing the minimum W/L ratios and transistor areas,it was found that either the annular layout or its ring counterpart incurs a higher area penalty that depends on the W/L ratio of the transistor to be designed.Furthermore,by comparing the output and transfer characteristics of the transistors and analyzing the popular existing methods for extracting the effective W/L ratio,it was shown that the mid-line approximation for annular NMOS could incur an error of more than 10%.It was also demonstrated that the foundry-provided extraction tool needs significant adaptation when being applied to the enclosed-gate transistors,since it is targeted only toward the two-edged transistor.A simple approach for rough extraction of the W/L ratio for the ring-gate NMOS was presented and its effectiveness was confirmed by the experimental results with an error up to 8%.

  12. Bill Gates eyes healthcare market.

    Science.gov (United States)

    Dunbar, C

    1995-02-01

    The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

  13. Quantum Circuit Synthesis using a New Quantum Logic Gate Library of NCV Quantum Gates

    Science.gov (United States)

    Li, Zhiqiang; Chen, Sai; Song, Xiaoyu; Perkowski, Marek; Chen, Hanwu; Zhu, Wei

    2017-04-01

    Since Controlled-Square-Root-of-NOT (CV, CV‡) gates are not permutative quantum gates, many existing methods cannot effectively synthesize optimal 3-qubit circuits directly using the NOT, CNOT, Controlled-Square-Root-of-NOT quantum gate library (NCV), and the key of effective methods is the mapping of NCV gates to four-valued quantum gates. Firstly, we use NCV gates to create the new quantum logic gate library, which can be directly used to get the solutions with smaller quantum costs efficiently. Further, we present a novel generic method which quickly and directly constructs this new optimal quantum logic gate library using CNOT and Controlled-Square-Root-of-NOT gates. Finally, we present several encouraging experiments using these new permutative gates, and give a careful analysis of the method, which introduces a new idea to quantum circuit synthesis.

  14. Quantum Circuit Synthesis using a New Quantum Logic Gate Library of NCV Quantum Gates

    Science.gov (United States)

    Li, Zhiqiang; Chen, Sai; Song, Xiaoyu; Perkowski, Marek; Chen, Hanwu; Zhu, Wei

    2016-12-01

    Since Controlled-Square-Root-of-NOT (CV, CV‡) gates are not permutative quantum gates, many existing methods cannot effectively synthesize optimal 3-qubit circuits directly using the NOT, CNOT, Controlled-Square-Root-of-NOT quantum gate library (NCV), and the key of effective methods is the mapping of NCV gates to four-valued quantum gates. Firstly, we use NCV gates to create the new quantum logic gate library, which can be directly used to get the solutions with smaller quantum costs efficiently. Further, we present a novel generic method which quickly and directly constructs this new optimal quantum logic gate library using CNOT and Controlled-Square-Root-of-NOT gates. Finally, we present several encouraging experiments using these new permutative gates, and give a careful analysis of the method, which introduces a new idea to quantum circuit synthesis.

  15. Environmental noise reduction for holonomic quantum gates

    CERN Document Server

    Parodi, Daniele; Solinas, Paolo; Zanghì, Nino

    2007-01-01

    We study the performance of holonomic quantum gates, driven by lasers, under the effect of a dissipative environment modeled as a thermal bath of oscillators. We show how to enhance the performance of the gates by suitable choice of the loop in the manifold of the controllable parameters of the laser. For a simplified, albeit realistic model, we find the surprising result that for a long time evolution the performance of the gate (properly estimated in terms of average fidelity) increases. On the basis of this result, we compare holonomic gates with the so-called STIRAP gates.

  16. Gate stack technology for nanoscale devices

    Directory of Open Access Journals (Sweden)

    Byoung Hun Lee

    2006-06-01

    Full Text Available Scaling of the gate stack has been a key to enhancing the performance of complementary metal-oxide-semiconductor (CMOS field-effect transistors (FETs of past technology generations. Because the rate of gate stack scaling has diminished in recent years, the motivation for alternative gate stacks or novel device structures has increased considerably. Intense research during the last decade has led to the development of high dielectric constant (k gate stacks that match the performance of conventional SiO2-based gate dielectrics. However, many challenges remain before alternative gate stacks can be introduced into mainstream technology. We review the current status of and challenges in gate stack research for planar CMOS devices and alternative device technologies to provide insights for future research.

  17. Microscale Digital Vacuum Electronic Gates

    Science.gov (United States)

    Manohara, Harish (Inventor); Mojarradi, Mohammed M. (Inventor)

    2014-01-01

    Systems and methods in accordance with embodiments of the invention implement microscale digital vacuum electronic gates. In one embodiment, a microscale digital vacuum electronic gate includes: a microscale field emitter that can emit electrons and that is a microscale cathode; and a microscale anode; where the microscale field emitter and the microscale anode are disposed within at least a partial vacuum; where the microscale field emitter and the microscale anode are separated by a gap; and where the potential difference between the microscale field emitter and the microscale anode is controllable such that the flow of electrons between the microscale field emitter and the microscale anode is thereby controllable; where when the microscale anode receives a flow of electrons, a first logic state is defined; and where when the microscale anode does not receive a flow of electrons, a second logic state is defined.

  18. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  19. NAND GATE USING FINFET FOR NANOSCALE TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    Nirmal,

    2010-05-01

    Full Text Available In this paper we propose Double gate transistors (FinFETs are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices. The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to even smaller dimensions to obtain fast switching transistors, as well as to reduce the power consumption. Even though the device characteristics are improved, high active leakage remain a problem. Leakage is found to contribute more amount of total power consumption in power-optimized FinFET logic circuits. This paper mainly deals with the various logic design styles to obtain the Leakage power savings through the judicious use of FinFET logic styles.

  20. Reversible logic gate using adiabatic superconducting devices

    Science.gov (United States)

    Takeuchi, N.; Yamanashi, Y.; Yoshikawa, N.

    2014-09-01

    Reversible computing has been studied since Rolf Landauer advanced the argument that has come to be known as Landauer's principle. This principle states that there is no minimum energy dissipation for logic operations in reversible computing, because it is not accompanied by reductions in information entropy. However, until now, no practical reversible logic gates have been demonstrated. One of the problems is that reversible logic gates must be built by using extremely energy-efficient logic devices. Another difficulty is that reversible logic gates must be both logically and physically reversible. Here we propose the first practical reversible logic gate using adiabatic superconducting devices and experimentally demonstrate the logical and physical reversibility of the gate. Additionally, we estimate the energy dissipation of the gate, and discuss the minimum energy dissipation required for reversible logic operations. It is expected that the results of this study will enable reversible computing to move from the theoretical stage into practical usage.

  1. System and Method for Scan Range Gating

    Science.gov (United States)

    Zuk, David M. (Inventor); Lindemann, Scott (Inventor)

    2017-01-01

    A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.

  2. Cognitive mechanisms associated with auditory sensory gating.

    Science.gov (United States)

    Jones, L A; Hills, P J; Dick, K M; Jones, S P; Bright, P

    2016-02-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification.

  3. Designing quantum gates using the genetic algorithm

    Science.gov (United States)

    Kumar, Karthikeyan S.; Paraoanu, G. S.

    2012-12-01

    We demonstrate the usage of Genetic Algorithm (GA) to tailor the radio frequency pulses for producing unitary transformations in qubit systems. We find that the initial population converges to the optimal solution after 10 generations, for a one segment pulse corresponding to single qubit Hadamard gate. For a two qubit CNOT gate, we see the population convergence for a two segment pulse after 150 generations. This demonstrates that the method is suitable for designing quantum gates.

  4. Floating gate transistors as biosensors (Conference Presentation)

    Science.gov (United States)

    Frisbie, C. Daniel

    2016-11-01

    Electrolyte gated transistors (EGTs) are a sub-class of thin film transistors that are extremely promising for biological sensing applications. These devices employ a solid electrolyte as the gate insulator; the very large capacitance of the electrolyte results in low voltage operation and high transconductance or gain. This talk will describe the fabrication of floating gate EGTs and their use as ricin sensors. The critical performance metrics for EGTs compared with other types of TFTs will also be reviewed.

  5. Bubbles, Gating, and Anesthetics in Ion Channels

    OpenAIRE

    Roth, Roland, imp.; Gillespie, Dirk; Nonner, Wolfgang; Eisenberg, Robert E.

    2008-01-01

    We suggest that bubbles are the bistable hydrophobic gates responsible for the on-off transitions of single channel currents. In this view, many types of channels gate by the same physical mechanism—dewetting by capillary evaporation—but different types of channels use different sensors to modulate hydrophobic properties of the channel wall and thereby trigger and control bubbles and gating. Spontaneous emptying of channels has been seen in many simulations. Because of the physics involved, s...

  6. Criteria for universality of quantum gates

    Science.gov (United States)

    Sawicki, Adam; Karnas, Katarzyna

    2017-06-01

    We consider the problem of deciding if a set of quantum one-qudit gates S ={U1,...,Un} is universal. We provide the compact-form criteria leading to a simple algorithm that allows deciding the universality of any given set of gates in a finite number of steps. Moreover, for a nonuniversal S our criteria indicate what types of gates can be added to S to turn it into a universal set.

  7. Circuits with arbitrary gates for random operators

    CERN Document Server

    Jukna, S

    2010-01-01

    We consider boolean circuits computing n-operators f:{0,1}^n --> {0,1}^n. As gates we allow arbitrary boolean functions; neither fanin nor fanout of gates is restricted. An operator is linear if it computes n linear forms, that is, computes a matrix-vector product y=Ax over GF(2). We prove the existence of n-operators requiring about n^2 wires in any circuit, and linear n-operators requiring about n^2/\\log n wires in depth-2 circuits, if either all output gates or all gates on the middle layer are linear.

  8. Gated Graphene Electrical Transport Characterization

    Directory of Open Access Journals (Sweden)

    Josef Náhlík

    2012-01-01

    Full Text Available Graphene is a very interesting new material, and promises attractive applications in future nanodevices. It is a 2D carbon structure with very interesting physical behavior. Graphene is an almost transparent material that has higher carrier mobility than any other material at room temperature. Graphene can therefore be used in applications such as ultrahigh-speed transistors and transparent electrodes. In this paper, we present our preliminary experiments on the transport behavior of graphene at room temperature. We measured the resistivity of Hall-bar samples depending on gate voltage (backgated graphene. Hysteresis between the forward and backward sweep direction was observed.

  9. Stimuli-responsive smart gating membranes.

    Science.gov (United States)

    Liu, Zhuang; Wang, Wei; Xie, Rui; Ju, Xiao-Jie; Chu, Liang-Yin

    2016-02-07

    Membranes are playing paramount roles in the sustainable development of myriad fields such as energy, environmental and resource management, and human health. However, the unalterable pore size and surface properties of traditional porous membranes restrict their efficient applications. The performances of traditional membranes will be weakened upon unavoidable membrane fouling, and they cannot be applied to cases where self-regulated permeability and selectivity are required. Inspired by natural cell membranes with stimuli-responsive channels, artificial stimuli-responsive smart gating membranes are developed by chemically/physically incorporating stimuli-responsive materials as functional gates into traditional porous membranes, to provide advanced functions and enhanced performances for breaking the bottlenecks of traditional membrane technologies. Smart gating membranes, integrating the advantages of traditional porous membrane substrates and smart functional gates, can self-regulate their permeability and selectivity via the flexible adjustment of pore sizes and surface properties based on the "open/close" switch of the smart gates in response to environmental stimuli. This tutorial review summarizes the recent developments in stimuli-responsive smart gating membranes, including the design strategies and the fabrication strategies that are based on the introduction of the stimuli-responsive gates after or during membrane formation, and the positively and negatively responsive gating models of versatile stimuli-responsive smart gating membranes, as well as the advanced applications of smart gating membranes for regulating substance concentration in reactors, controlling the release rate of drugs, separating active molecules based on size or affinity, and the self-cleaning of membrane surfaces. With self-regulated membrane performances, smart gating membranes show great power for use in global sustainable development.

  10. Nanosecond gating properties of proximity focused microchannel plate image intensifiers

    Science.gov (United States)

    King, N. S. P.; King, N. S. P.; Yates, G. J.; Jaramillo, S. A.; Noel, B. W.; Detch, J. L., Jr.; Ogle, J. W.

    The optical gating properties of Multichannel plate image intensifiers were characterized. Emphasis was placed on parameters relevant to gating speed and correlations between the applied electrical and resultant optical gates.

  11. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  12. Protected gates for topological quantum field theories

    Energy Technology Data Exchange (ETDEWEB)

    Beverland, Michael E.; Pastawski, Fernando; Preskill, John [Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125 (United States); Buerschaper, Oliver [Dahlem Center for Complex Quantum Systems, Freie Universität Berlin, 14195 Berlin (Germany); Koenig, Robert [Institute for Advanced Study and Zentrum Mathematik, Technische Universität München, 85748 Garching (Germany); Sijher, Sumit [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-02-15

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  13. TRADITIONAL WOODEN GATES IN THE SZEKLER LAND

    Directory of Open Access Journals (Sweden)

    GhiorghiŃă Nicolaie COMSA

    2013-09-01

    Full Text Available This paper presents specific aspects oftraditional wooden gates built in the rural area of thecounty of Harghita in Romania. One can see the loveand appreciation given to woodworking and outdoorelements of household adornment, beautiful insidetransmitted outside. Constructive elements andornaments are given specific geographical area.These gates belong to our national cultural heritage.

  14. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    Science.gov (United States)

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  15. Logic gates based on ion transistors.

    Science.gov (United States)

    Tybrandt, Klas; Forchheimer, Robert; Berggren, Magnus

    2012-05-29

    Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so far been presented and most of them are not functional at physiological salt concentrations. Here we report integrated chemical logic gates based on ion bipolar junction transistors. Inverters and NAND gates of both npn type and complementary type are demonstrated. We find that complementary ion gates have higher gain and lower power consumption, as compared with the single transistor-type gates, which imitates the advantages of complementary logics found in conventional electronics. Ion inverters and NAND gates lay the groundwork for further development of solid-state chemical delivery circuits.

  16. Airport Gate Assignment: New Model and Implementation

    CERN Document Server

    Li, Chendong

    2008-01-01

    Airport gate assignment is of great importance in airport operations. In this paper, we study the Airport Gate Assignment Problem (AGAP), propose a new model and implement the model with Optimization Programming language (OPL). With the objective to minimize the number of conflicts of any two adjacent aircrafts assigned to the same gate, we build a mathematical model with logical constraints and the binary constraints, which can provide an efficient evaluation criterion for the Airlines to estimate the current gate assignment. To illustrate the feasibility of the model we construct experiments with the data obtained from Continental Airlines, Houston Gorge Bush Intercontinental Airport IAH, which indicate that our model is both energetic and effective. Moreover, we interpret experimental results, which further demonstrate that our proposed model can provide a powerful tool for airline companies to estimate the efficiency of their current work of gate assignment.

  17. Gating of Permanent Molds for ALuminum Casting

    Energy Technology Data Exchange (ETDEWEB)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  18. Glare suppression by coherence gated negation

    CERN Document Server

    Zhou, Edward Haojiang; Brake, Joshua; Ruan, Haowen; Yang, Changhuei

    2016-01-01

    Imaging of a weak target hidden behind a scattering medium can be significantly confounded by glare. We report a method, termed coherence gated negation (CGN), that uses destructive optical interference to suppress glare and allow improved imaging of a weak target. As a demonstration, we show that by permuting through a set range of amplitude and phase values for a reference beam interfering with the optical field from the glare and target reflection, we can suppress glare by an order of magnitude, even when the optical wavefront is highly disordered. This strategy significantly departs from conventional coherence gating methods in that CGN actively 'gates out' the unwanted optical contributions while conventional methods 'gate in' the target optical signal. We further show that the CGN method can outperform conventional coherence gating image quality in certain scenarios by more effectively rejecting unwanted optical contributions.

  19. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  20. Graduate Automotive Technology Education (GATE) Center

    Energy Technology Data Exchange (ETDEWEB)

    Jeffrey Hodgson; David Irick

    2005-09-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  1. A quantum Fredkin gate (Conference Presentation)

    Science.gov (United States)

    Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

    2016-10-01

    One of the greatest challenges in modern science is the realisation of quantum computers which, as their scale increases, will allow enhanced performance of tasks across many areas of quantum information processing. Quantum logic gates play a vital role in realising these applications by carrying out the elementary operations on the qubits; a key aim is minimising the resources needed to build these gates into useful circuits. While the salient features of a quantum computer have been shown in proof-of-principle experiments, e.g., single- and two-qubit gates, difficulties in scaling quantum systems to encode and manipulate multiple qubits has hindered demonstrations of more complex operations. This is exemplified by the classical Fredkin (or controlled-SWAP) gate [1] for which, despite many theoretical proposals [2,3] relying on concatenating multiple two-qubit gates, a quantum analogue has yet to be realised. Here, by directly adding control to a two-qubit SWAP unitary [4], we use photonic qubit logic to report the first experimental demonstration of a quantum Fredkin gate [5]. Our scheme uses linear optics and improves on the overall probability of success by an order of magnitude over previous proposals [2,3]. This optical approach allows us to add control an arbitrary black-box unitary which is otherwise forbidden in the standard circuit model [6]. Additionally, the action of our gate exhibits quantum coherence allowing the generation of the highest fidelity three-photon GHZ states to date. The quantum Fredkin gate has many applications in quantum computing, quantum measurements [7] and cryptography [8,9]. Using our scheme, we apply the Fredkin gate to the task of direct measurements of the purity and state overlap of a quantum system [7] without recourse to quantum state tomography.

  2. Getting started with FortiGate

    CERN Document Server

    Fabbri, Rosato

    2013-01-01

    This book is a step-by-step tutorial that will teach you everything you need to know about the deployment and management of FortiGate, including high availability, complex routing, various kinds of VPN working, user authentication, security rules and controls on applications, and mail and Internet access.This book is intended for network administrators, security managers, and IT pros. It is a great starting point if you have to administer or configure a FortiGate unit, especially if you have no previous experience. For people that have never managed a FortiGate unit, the book helpfully walks t

  3. Gate A: changes to opening hours

    CERN Multimedia

    2015-01-01

    Due to maintenance work, the opening hours of Gate A (near Reception) will be modified between Monday, 13 and Friday, 17 April 2015.   During this period, the gate will be open to vehicles between 7 a.m. and 9.30 a.m., then between 4.30 p.m. and 7 p.m. It will be completely closed to traffic between 9.30 a.m. and 4.30 p.m. Pedestrians and cyclists may continue to use the gate. We apologise for any inconvenience and thank you for your understanding.

  4. Diagonal gates in the Clifford hierarchy

    Science.gov (United States)

    Cui, Shawn X.; Gottesman, Daniel; Krishna, Anirudh

    2017-01-01

    The Clifford hierarchy is a set of gates that appears in the theory of fault-tolerant quantum computation, but its precise structure remains elusive. We give a complete characterization of the diagonal gates in the Clifford hierarchy for prime-dimensional qudits. They turn out to be pmth roots of unity raised to polynomial functions of the basis state to which they are applied, and we determine which level of the Clifford hierarchy a given gate sits in based on m and the degree of the polynomial.

  5. Calibration of submerged multi-sluice gates

    Directory of Open Access Journals (Sweden)

    Mohamed F. Sauida

    2014-09-01

    The main objective of this work is to study experimentally and verify empirically the different parameters affecting the discharge through submerged multiple sluice gates (i.e., the expansion ratios, gates operational management, etc.. Using multiple regression analysis of the experimental results, a general equation for discharge coefficient is developed. The results show, that the increase in the expansion ratio and the asymmetric operation of gates, give higher values for the discharge coefficient. The obtained predictions of the discharge coefficient using the developed equations are compared to the experimental data. The present developed equations showed good consistency and high accuracy.

  6. Stay vane and wicket gate relationship study

    Energy Technology Data Exchange (ETDEWEB)

    None, None

    2005-01-19

    This report evaluates potential environmental and performance gains that can be achieved in a Kaplan turbine through non-structural modifications to stay vane and wicket gate assemblies. This summary is based primarily on data and conclusions drawn from models and studies of Lower Granite Dam. Based on this investigation, the study recommends (1) a proof of concept at Lower Granite Dam to establish predicted improvements for the existing turbine and to further refine the stay vane wicket gate designs for fish passage; and (2) consideration of the stay vane wicket gate systems in any future turbine rehabilitation studies.

  7. Cascaded logic gates in nanophotonic plasmon networks.

    Science.gov (United States)

    Wei, Hong; Wang, Zhuoxian; Tian, Xiaorui; Käll, Mikael; Xu, Hongxing

    2011-07-12

    Optical computing has been pursued for decades as a potential strategy for advancing beyond the fundamental performance limitations of semiconductor-based electronic devices, but feasible on-chip integrated logic units and cascade devices have not been reported. Here we demonstrate that a plasmonic binary NOR gate, a 'universal logic gate', can be realized through cascaded OR and NOT gates in four-terminal plasmonic nanowire networks. This finding provides a path for the development of novel nanophotonic on-chip processor architectures for future optical computing technologies.

  8. The gating of the CFTR channel.

    Science.gov (United States)

    Moran, Oscar

    2017-01-01

    Cystic fibrosis transmembrane conductance regulator (CFTR) is an anion channel expressed in the apical membrane of epithelia. Mutations in the CFTR gene are the cause of cystsic fibrosis. CFTR is the only ABC-protein that constitutes an ion channel pore forming subunit. CFTR gating is regulated in complex manner as phosphorylation is mandatory for channel activity and gating is directly regulated by binding of ATP to specific intracellular sites on the CFTR protein. This review covers our current understanding on the gating mechanism in CFTR and illustrates the relevance of alteration of these mechanisms in the onset of cystic fibrosis.

  9. Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate

    Directory of Open Access Journals (Sweden)

    Viranjay M. Srivastava

    2012-05-01

    Full Text Available The scaling of simple gate transistors requires the scaling and transistor elements like source/drain junction became difficult to scale further after a limit due to adverse effect of electrostatic and short-channel performance. The solution of the problem is tri-gate where we can increase the performance without increasing the width and without scaling. In this paper we have described the parameter of tri-gate and taking the high dielectric as substrate.

  10. Active gated imaging in driver assistance system

    Science.gov (United States)

    Grauer, Yoav

    2014-04-01

    In this paper, we shall present the active gated imaging system (AGIS) in relation to the automotive field. AGIS is based on a fast-gated camera and pulsed illuminator, synchronized in the time domain to record images of a certain range of interest. A dedicated gated CMOS imager sensor and near infra-red (NIR) pulsed laser illuminator, is presented in this paper to provide active gated technology. In recent years, we have developed these key components and learned the system parameters, which are most beneficial to nighttime (in all weather conditions) driving in terms of field of view, illumination profile, resolution, and processing power. We shall present our approach of a camera-based advanced driver assistance systems (ADAS) named BrightEye™, which makes use of the AGIS technology in the automotive field.

  11. Single spin universal Boolean logic gate

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, H; Pramanik, S; Bandyopadhyay, S [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284 (United States)

    2008-01-15

    Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates, where binary bits are encoded in spin polarizations of single electrons. Here, we show that a linear array of three quantum dots, each containing a single spin polarized electron, and with nearest neighbor exchange coupling, acts as a NAND gate. The energy dissipated during switching this gate is the Landauer-Shannon limit of kTln(1/p{sub i} ) (T = ambient temperature and p{sub i}= intrinsic gate error probability). With present day technology, p{sub i} = 10{sup -9} is achievable above 1 K temperature. Even with this small intrinsic error probability, the energy dissipated during switching is only {approx}21kT, while today's nanoscale transistors dissipate about 40 000-50 000kT when they switch.

  12. Adiabatic quantum gates and Boolean functions

    Energy Technology Data Exchange (ETDEWEB)

    Andrecut, M; Ali, M K [Department of Physics, University of Lethbridge, Lethbridge, AB, T1K 3M4 (Canada)

    2004-06-25

    We discuss the logical implementation of quantum gates and Boolean functions in the framework of quantum adiabatic method, which uses the language of ground states, spectral gaps and Hamiltonians instead of the standard unitary transformation language. (letter to the editor)

  13. Synthesizing biomolecule-based Boolean logic gates.

    Science.gov (United States)

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2013-02-15

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

  14. Coherently dedispersed gated imaging of millisecond pulsars

    CERN Document Server

    Roy, Jayanta

    2013-01-01

    Motivated by the need for rapid localisation of newly discovered faint millisecond pulsars (MSPs) we have developed a coherently dedispersed gating correlator. This gating correlator accounts for the orbital motions of MSPs in binaries while folding the visibilities with best-fit topocentric rotational model derived from periodicity search in simultaneously generated beamformer output. Unique applications of the gating correlator for sensitive interferometric studies of MSPs are illustrated using the Giant Metrewave Radio Telescope (GMRT) interferometric array. We could unambiguously localise five newly discovered Fermi MSPs in the on-off gated image plane with an accuracy of +-1". Immediate knowledge of such precise position allows the use of sensitive coherent beams of array telescopes for follow-up timing observations, which substantially reduces the use of telescope time (~ 20X for the GMRT). In addition, precise a-priori astrometric position reduces the effect of large covariances in timing fit (with dis...

  15. Golden Gate and Pt. Reyes Acoustic Detections

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains detections of acoustic tagged fish from two general locations: Golden Gate (east and west line) and Pt. Reyes. Several Vemco 69khz acoustic...

  16. 2010 ARRA Lidar: Golden Gate (CA)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Golden Gate LiDAR Project is a cooperative project sponsored by the US Geological Survey (USGS) and San Francisco State University (SFSU) that has resulted in...

  17. Time-gated optical projection tomography.

    Science.gov (United States)

    Bassi, Andrea; Brida, Daniele; D'Andrea, Cosimo; Valentini, Gianluca; Cubeddu, Rinaldo; De Silvestri, Sandro; Cerullo, Giulio

    2010-08-15

    We present an imaging technique that combines optical projection tomography with ballistic imaging using ultrafast time gating. The method provides high-resolution reconstruction of scattering samples and is suitable for three-dimensional (3D) imaging of biological models.

  18. Single gate optimization for plastic injection mold

    Institute of Scientific and Technical Information of China (English)

    LI Ji-quan; LI De-qun; GUO Zhi-ying; LV Hai-yuan

    2007-01-01

    This paper deals with a methodology for single gate location optimization for plastic injection mold. The objective of the gate optimization is to minimize the warpage of injection molded parts, because warpage is a crucial quality issue for most injection molded parts while it is influenced greatly by the gate location. Feature warpage is defined as the ratio of maximum displacement on the feature surface to the projected length of the feature surface to describe part warpage. The optimization is combined with the numerical simulation technology to find the optimal gate location, in which the simulated annealing algorithm is used to search for the optimum. Finally, an example is discussed in the paper and it can be concluded that the proposed method is effective.

  19. GATING SYSTEMS FOR PRODUCTION OF HYDRODISTRIBUTORS

    Directory of Open Access Journals (Sweden)

    D. A. Volkov

    2010-01-01

    Full Text Available Gating systems of the first group of special ways of casting into shell molds, casting in lined chill mold as more effective for production of hydrodistributors were developed and studied.

  20. Mechanical gating of a mechanochemical reaction cascade

    Science.gov (United States)

    Wang, Junpeng; Kouznetsova, Tatiana B.; Boulatov, Roman; Craig, Stephen L.

    2016-11-01

    Covalent polymer mechanochemistry offers promising opportunities for the control and engineering of reactivity. To date, covalent mechanochemistry has largely been limited to individual reactions, but it also presents potential for intricate reaction systems and feedback loops. Here we report a molecular architecture, in which a cyclobutane mechanophore functions as a gate to regulate the activation of a second mechanophore, dichlorocyclopropane, resulting in a mechanochemical cascade reaction. Single-molecule force spectroscopy, pulsed ultrasonication experiments and DFT-level calculations support gating and indicate that extra force of >0.5 nN needs to be applied to a polymer of gated gDCC than of free gDCC for the mechanochemical isomerization gDCC to proceed at equal rate. The gating concept provides a mechanism by which to regulate stress-responsive behaviours, such as load-strengthening and mechanochromism, in future materials designs.

  1. Smart gating membranes with in situ self-assembled responsive nanogels as functional gates

    Science.gov (United States)

    Luo, Feng; Xie, Rui; Liu, Zhuang; Ju, Xiao-Jie; Wang, Wei; Lin, Shuo; Chu, Liang-Yin

    2015-10-01

    Smart gating membranes, inspired by the gating function of ion channels across cell membranes, are artificial membranes composed of non-responsive porous membrane substrates and responsive gates in the membrane pores that are able to dramatically regulate the trans-membrane transport of substances in response to environmental stimuli. Easy fabrication, high flux, significant response and strong mechanical strength are critical for the versatility of such smart gating membranes. Here we show a novel and simple strategy for one-step fabrication of smart gating membranes with three-dimensionally interconnected networks of functional gates, by self-assembling responsive nanogels on membrane pore surfaces in situ during a vapor-induced phase separation process for membrane formation. The smart gating membranes with in situ self-assembled responsive nanogels as functional gates show large flux, significant response and excellent mechanical property simultaneously. Because of the easy fabrication method as well as the concurrent enhancement of flux, response and mechanical property, the proposed smart gating membranes will expand the scope of membrane applications, and provide ever better performances in their applications.

  2. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

    Science.gov (United States)

    Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

    2017-03-06

    Large conductance Ca(2+)-activated K(+) channels (BK channels) gate open in response to both membrane voltage and intracellular Ca(2+) The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca(2+) sensor. How these voltage and Ca(2+) sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca(2+) activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca(2+) sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits.

  3. Hysteresis in voltage-gated channels.

    Science.gov (United States)

    Villalba-Galea, Carlos A

    2016-09-30

    Ion channels constitute a superfamily of membrane proteins found in all living creatures. Their activity allows fast translocation of ions across the plasma membrane down the ion's transmembrane electrochemical gradient, resulting in a difference in electrical potential across the plasma membrane, known as the membrane potential. A group within this superfamily, namely voltage-gated channels, displays activity that is sensitive to the membrane potential. The activity of voltage-gated channels is controlled by the membrane potential, while the membrane potential is changed by these channels' activity. This interplay produces variations in the membrane potential that have evolved into electrical signals in many organisms. These signals are essential for numerous biological processes, including neuronal activity, insulin release, muscle contraction, fertilization and many others. In recent years, the activity of the voltage-gated channels has been observed not to follow a simple relationship with the membrane potential. Instead, it has been shown that the activity of voltage-gated channel displays hysteresis. In fact, a growing number of evidence have demonstrated that the voltage dependence of channel activity is dynamically modulated by activity itself. In spite of the great impact that this property can have on electrical signaling, hysteresis in voltage-gated channels is often overlooked. Addressing this issue, this review provides examples of voltage-gated ion channels displaying hysteretic behavior. Further, this review will discuss how Dynamic Voltage Dependence in voltage-gated channels can have a physiological role in electrical signaling. Furthermore, this review will elaborate on the current thoughts on the mechanism underlying hysteresis in voltage-gated channels.

  4. P50 sensory gating in infants.

    Science.gov (United States)

    Ross, Anne Spencer; Hunter, Sharon Kay; Groth, Mark A; Ross, Randal Glenn

    2013-12-26

    Attentional deficits are common in a variety of neuropsychiatric disorders including attention deficit-hyperactivity disorder, autism, bipolar mood disorder, and schizophrenia. There has been increasing interest in the neurodevelopmental components of these attentional deficits; neurodevelopmental meaning that while the deficits become clinically prominent in childhood or adulthood, the deficits are the results of problems in brain development that begin in infancy or even prenatally. Despite this interest, there are few methods for assessing attention very early in infancy. This report focuses on one method, infant auditory P50 sensory gating. Attention has several components. One of the earliest components of attention, termed sensory gating, allows the brain to tune out repetitive, noninformative sensory information. Auditory P50 sensory gating refers to one task designed to measure sensory gating using changes in EEG. When identical auditory stimuli are presented 500 ms apart, the evoked response (change in the EEG associated with the processing of the click) to the second stimulus is generally reduced relative to the response to the first stimulus (i.e. the response is "gated"). When response to the second stimulus is not reduced, this is considered a poor sensory gating, is reflective of impaired cerebral inhibition, and is correlated with attentional deficits. Because the auditory P50 sensory gating task is passive, it is of potential utility in the study of young infants and may provide a window into the developmental time course of attentional deficits in a variety of neuropsychiatric disorders. The goal of this presentation is to describe the methodology for assessing infant auditory P50 sensory gating, a methodology adapted from those used in studies of adult populations.

  5. Cognitive mechanisms associated with auditory sensory gating

    OpenAIRE

    Jones, L. A.; Hills, P.J.; Dick, K.M.; Jones, S. P.; Bright, P

    2015-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants addit...

  6. Boolean gates on actin filaments

    Science.gov (United States)

    Siccardi, Stefano; Tuszynski, Jack A.; Adamatzky, Andrew

    2016-01-01

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications.

  7. Sensory gating deficits in parents of schizophrenics

    Energy Technology Data Exchange (ETDEWEB)

    Waldo, M.; Madison, A.; Freedman, R. [Univ. of Colorado Health Sciences Center, Denver, CO (United States)] [and others

    1995-12-18

    Although schizophrenia clusters in families, it is not inherited in Mendelian fashion. This suggests that there may be alternative phenotypic expressions of genes that convey risk for schizophrenia, such as more elementary physiological or biochemical defects. One proposed phenotype is impaired inhibitory gating of the auditory evoked potential to repeated stimuli. Normally, the amplitude of the P50 response to the second stimulus is significantly less than the response to the first, but this gating of response is generally impaired in schizophrenia. Clinically unaffected individuals within a pedigree who have both an ancestral and descendant history of schizophrenia may be useful for studying whether this physiological defect is a possible alternative phenotype. We have studied inhibitory gating of the auditory P50 response to pairs of auditory stimuli in 17 nuclear families. In 11, there was one parent who had another relative with a chronic psychotic illness, in addition to the schizophrenic proband. AR of the parents with family histories of schizophrenia had gating of the P50 response similar to their schizophrenia offspring, whereas only 7% of the parents without family history had gating of the P50 response in the abnormal range. These results support loss of gating of the auditory P50 wave as an inherited deficit related to schizophrenia and suggest that studies of parents may help elucidate the neurobiological expression of genes that convey risk for schizophrenia. 36 refs., 2 figs., 2 tabs.

  8. VKCDB: Voltage-gated potassium channel database

    Directory of Open Access Journals (Sweden)

    Gallin Warren J

    2004-01-01

    Full Text Available Abstract Background The family of voltage-gated potassium channels comprises a functionally diverse group of membrane proteins. They help maintain and regulate the potassium ion-based component of the membrane potential and are thus central to many critical physiological processes. VKCDB (Voltage-gated potassium [K] Channel DataBase is a database of structural and functional data on these channels. It is designed as a resource for research on the molecular basis of voltage-gated potassium channel function. Description Voltage-gated potassium channel sequences were identified by using BLASTP to search GENBANK and SWISSPROT. Annotations for all voltage-gated potassium channels were selectively parsed and integrated into VKCDB. Electrophysiological and pharmacological data for the channels were collected from published journal articles. Transmembrane domain predictions by TMHMM and PHD are included for each VKCDB entry. Multiple sequence alignments of conserved domains of channels of the four Kv families and the KCNQ family are also included. Currently VKCDB contains 346 channel entries. It can be browsed and searched using a set of functionally relevant categories. Protein sequences can also be searched using a local BLAST engine. Conclusions VKCDB is a resource for comparative studies of voltage-gated potassium channels. The methods used to construct VKCDB are general; they can be used to create specialized databases for other protein families. VKCDB is accessible at http://vkcdb.biology.ualberta.ca.

  9. Methodology of Resonant Equiangular Composite Quantum Gates

    Science.gov (United States)

    Low, Guang Hao; Yoder, Theodore J.; Chuang, Isaac L.

    2016-10-01

    The creation of composite quantum gates that implement quantum response functions U ^(θ ) dependent on some parameter of interest θ is often more of an art than a science. Through inspired design, a sequence of L primitive gates also depending on θ can engineer a highly nontrivial U ^ (θ ) that enables myriad precision metrology, spectroscopy, and control techniques. However, discovering new, useful examples of U ^(θ ) requires great intuition to perceive the possibilities, and often brute force to find optimal implementations. We present a systematic and efficient methodology for composite gate design of arbitrary length, where phase-controlled primitive gates all rotating by θ act on a single spin. We fully characterize the realizable family of U ^ (θ ) , provide an efficient algorithm that decomposes a choice of U ^ (θ ) into its shortest sequence of gates, and show how to efficiently choose an achievable U ^(θ ) that, for fixed L , is an optimal approximation to objective functions on its quadratures. A strong connection is forged with classical discrete-time signal processing, allowing us to swiftly construct, as examples, compensated gates with optimal bandwidth that implement arbitrary single-spin rotations with subwavelength spatial selectivity.

  10. High-Confidence Quantum Gate Tomography

    Science.gov (United States)

    Johnson, Blake; da Silva, Marcus; Ryan, Colm; Kimmel, Shelby; Donovan, Brian; Ohki, Thomas

    2014-03-01

    Debugging and verification of high-fidelity quantum gates requires the development of new tools and protocols to unwrap the performance of the gate from the rest of the sequence. Randomized benchmarking tomography[2] allows one to extract full information of the unital portion of the gate with high confidence. We report experimental confirmation of the technique's applicability to quantum gate tomography. We show that the method is robust to common experimental imperfections such as imperfect single-shot readout and state preparation. We also demonstrate the ability to characterize non-Clifford gates. To assist in the experimental implementation we introduce two techniques. ``Atomic Cliffords'' use phase ramping and frame tracking to allow single-pulse implementation of the full group of single-qubit Clifford gates. Domain specific pulse sequencers allow rapid implementation of the many thousands of sequences needed. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office contract no. W911NF-10-1-0324.

  11. Radiation-Insensitive Inverse Majority Gates

    Science.gov (United States)

    Manohara, Harish; Mojarradi, Mohammad

    2008-01-01

    To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

  12. Fetal Electrocardiogram (fECG Gated MRI

    Directory of Open Access Journals (Sweden)

    Martyn N.J. Paley

    2013-08-01

    Full Text Available We have developed a Magnetic Resonance Imaging (MRI-compatible system to enable gating of a scanner to the heartbeat of a foetus for cardiac, umbilical cord flow and other possible imaging applications. We performed radiofrequency safety testing prior to a fetal electrocardiogram (fECG gated imaging study in pregnant volunteers (n = 3. A compact monitoring device with advanced software capable of reliably detecting both the maternal electrocardiogram (mECG and fECG simultaneously was modified by the manufacturer (Monica Healthcare, Nottingham, UK to provide an external TTL trigger signal from the detected fECG which could be used to trigger a standard 1.5 T MR (GE Healthcare, Milwaukee, WI, USA gating system with suitable attenuation. The MR scanner was tested by triggering rapidly during image acquisition at a typical fetal heart rate (123 beats per minute using a simulated fECG waveform fed into the gating system. Gated MR images were also acquired from volunteers who were attending for a repeat fetal Central Nervous System (CNS examination using an additional rapid cardiac imaging sequence triggered from the measured fECG. No adverse safety effects were encountered. This is the first time fECG gating has been used with MRI and opens up a range of new possibilities to study a developing foetus.

  13. Gated SIT Vidicon Streak Tube

    Science.gov (United States)

    Dunbar, D. L.; Yates, G. J.; Black, J. P.

    1986-01-01

    A recently developed prototype streak tube designed to produce high gain and resolution by incorporating the streak and readout functions in one envelope thereby minimizing photon-to-charge transformations and eliminating external coupling losses is presented. The tube is based upon a grid-gated Silicon-Intensified-Target Vidicon (SITV) with integral Focus Projection Scan (FPS) TV readout. Demagnifying electron optics (m=0.63) in the image section map the 40-mm-diameter photocathode image unto a 25-mm-diameter silicon target where gains >= 103 are achieved with only 10 KV accelerating voltage. This is compared with much lower gains (~ 50) at much higher voltages (~ 30 KV) reported for streak tubes using phosphor screens. Because SIT technology is well established means for electron imaging in vacuum, such fundamental problems as "backside thinning" required for electron imaging unto CCDs do not exist. The high spatial resolution (~ 30 1p/mm), variable scan formats, and high speed electrostatic deflection (250 mm2 areas are routinely rastered with 256 scan lines in 1.6 ms) available from FPS readout add versatility not available in CCD devices. Theoretical gain and spatial resolution for this design (developed jointly by Los Alamos National Laboratory and General Electric Co.) are compared with similar calculations and measured data obtained for RCA 73435 streaks fiber optically coupled to (1) 25-mm-diameter SIT FPS vidicons and (2) 40-mm-diameter MCPTs (proximity-focused microchannel plate image intensifier tubes) fiber optically coupled to 18-mm-diameter Sb2S3 FPS vidicons. Sweep sensitivity, shutter ratio, and record lengths for nanosecond duration (20 to 200 ns) streak applications are discussed.

  14. Controlled Logic Gates-Switch Gate and Fredkin Gate Based on Enzyme-Biocatalyzed Reactions Realized in Flow Cells.

    Science.gov (United States)

    Fratto, Brian E; Katz, Evgeny

    2016-04-04

    Controlled logic gates, where the logic operations on the Data inputs are performed in the way determined by the Control signal, were designed in a chemical fashion. Specifically, the systems where the Data output signals directed to various output channels depending on the logic value of the Control input signal have been designed based on enzyme biocatalyzed reactions performed in a multi-cell flow system. In the Switch gate one Data signal was directed to one of two possible output channels depending on the logic value of the Control input signal. In the reversible Fredkin gate the routing of two Data signals between two output channels is controlled by the third Control signal. The flow devices were created using a network of flow cells, each modified with one enzyme that biocatalyzed one chemical reaction. The enzymatic cascade was realized by moving the solution from one reacting cell to another which were organized in a specific network. The modular design of the enzyme-based systems realized in the flow device allowed easy reconfiguration of the logic system, thus allowing simple extension of the logic operation from the 2-input/3-output channels in the Switch gate to the 3-input/3-output channels in the Fredkin gate. Further increase of the system complexity for realization of various logic processes is feasible with the use of the flow cell modular design. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Statistical determinations of the gating windows in the respiratory gated radiotherapy using the visible guiding system

    CERN Document Server

    Oh, Se An; Lee, Hyun Jeong; Kim, Sung Kyu

    2015-01-01

    Purpose: Respiratory gated radiation therapy (RGRT) is used to minimize the radiation dose to normal tissue in lung cancer patients. Determinations of the gating window in the respiratory phase of patients are important in RGRT but it is not easy. The objective of this study was to determine the optimal gating window with a visible guiding system in RGRT. Materials and Methods: Between April and October in 2014 the breathing signals of 23 lung cancer patients were recorded with a Real-time Position Management (RPM) respiratory gating system (Varian, USA). We performed statistical analysis with breathing signals to find the optimal gating window for the guided breathing for RGRT. Results: 19 of the 23 patients showed statistically significant differences (p < 0.05) when the breathing signals obtained before and after breathing training were compared, The standard deviation of the respiration signals after breathing training was the lowest in the phase of 30 % - 70 % (p < 0.05). Conclusions: RGRT with RPM...

  16. Iron Gates Natural Park - Administration and Management

    Directory of Open Access Journals (Sweden)

    Sînziana Pauliuc

    2016-11-01

    Full Text Available This paper analyzes the management and administration of one of the largest, beautiful and complex natural parks from Romania, the Iron Gates Natural Park. The management plan is a frame of integration of the biodiversity conservation problems and protection of the natural and cultural environment that also supports socio-economic development of Iron Gates Natural Park. It is also an instrument of dialog between the institutions which coordinate this area. The management plan is a document approved by H.G 1048/2013 and it resulted after consulting the interested factors of the area (city halls, local and central authorities, civil society. The administration of Iron Gates Natural Park has a new structure, founded in 2003 and is working as a subunit of Forest-National Administration (Romsilva, which assures the necessary personal and equipment for administrating the area. The area has the status of: Natural Park, Natura 2000 and Ramsar site. The forest represents 65% of the total area, 98% being a state property. Analysing Iron Gates Natural Park documents (Iron Gates Natural Park management plan, scientific council and park administration documents, visits and observations within park, we can conclude that the park has a good administration leaded by the scientific councils, who also achieved many successful European projects.

  17. Szilard engine reversibility as quantum gate function

    Science.gov (United States)

    Mihelic, F. Matthew

    2012-06-01

    A quantum gate is a logically and thermodynamically reversible situation that effects a unitary transformation of qubits of superimposed information, and essentially constitutes a situation for a reversible quantum decision. A quantum decision is a symmetry break, and the effect of the function of a Szilard engine is a symmetry break. A quantum gate is a situation in which a reversible quantum decision can be made, and so if a logically and thermodynamically reversible Szilard engine can be theoretically constructed then it would function as a quantum gate. While the traditionally theorized Szilard engine is not thermodynamically reversible, if one of the bounding walls of a Szilard engine were to be constructed out of the physical information by which it functions in such a manner as to make that information available to both sides of the wall simultaneously, then such a Szilard engine would be both logically and thermodynamically reversible, and thus capable of function as a quantum gate. A theoretical model of the special case of a reversible Szilard engine functioning as a quantum gate is presented and discussed, and since a quantum decision is made when the shutter of a Szilard engine closes, the coherence of linked reversible Szilard engines should be considered as a state during which all of the shutters of linked Szilard engines are open simultaneously.

  18. Variable Block Carry Skip Logic using Reversible Gates

    OpenAIRE

    Islam, Md. Rafiqul; Islam, Md. Saiful; Karim, Muhammad Rezaul; Mahmud, Abdullah Al; Babu, Hafiz Md. Hasan

    2010-01-01

    Reversible circuits have applications in digital signal processing, computer graphics, quantum computation and cryptography. In this paper, a generalized k*k reversible gate family is proposed and a 3*3 gate of the family is discussed. Inverter, AND, OR, NAND, NOR, and EXOR gates can be realized by this gate. Implementation of a full-adder circuit using two such 3*3 gates is given. This full-adder circuit contains only two reversible gates and produces no extra garbage outputs. The proposed f...

  19. Multibit CkNOT quantum gates via Rydberg blockade

    DEFF Research Database (Denmark)

    Isenhower, L.; Saffman, Mark; Mølmer, Klaus

    2011-01-01

    Long range Rydberg blockade interactions have the potential for efficient implementation of quantum gates between multiple atoms. Here we present and analyze a protocol for implementation of a k-atom controlled NOT (CkNOT) neutral atom gate. This gate can be implemented using sequential or simult......Long range Rydberg blockade interactions have the potential for efficient implementation of quantum gates between multiple atoms. Here we present and analyze a protocol for implementation of a k-atom controlled NOT (CkNOT) neutral atom gate. This gate can be implemented using sequential...

  20. A gate size estimation algorithm for data association filters

    Institute of Scientific and Technical Information of China (English)

    WANG MingHui; WAN Qun; YOU ZhiSheng

    2008-01-01

    The problem of forming validation regions or gates for new sensor measurements obtained when tracking targets in clutter is considered. Since the gate size is an integral part of the data association filter, this paper is intended to describe a way of estimating the gate size via the performance of the data association filter. That is, the gate size can be estimated by looking for the optimal performance of the data association filter. Simulations show that this estimation method of the gate size offers advantages over the common and classical estimation methods of the gate size, especially in a heavy clutter and/or false alarm environment.

  1. AN IMPROVED DESIGN OF A MULTIPLIER USING REVERSIBLE LOGIC GATES

    Directory of Open Access Journals (Sweden)

    H.R.BHAGYALAKSHMI

    2010-08-01

    Full Text Available Reversible logic gates are very much in demand for the future computing technologies as they are known to produce zero power dissipation under ideal conditions. This paper proposes an improved design of a multiplier using reversible logic gates. Multipliers are very essential for the construction of various computational units of a quantum computer. The quantum cost of a reversible logic circuit can be minimized by reducing the number of reversible logic gates. For this two 4*4 reversible logic gates called a DPG gate and a BVF gate are used.

  2. Realization of allowable qeneralized quantum gates

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The most general duality gates were introduced by Long,Liu and Wang and named allowable generalized quantum gates (AGQGs,for short).By definition,an allowable generalized quantum gate has the form of U=YfkjsckUK,where Uk’s are unitary operators on a Hilbert space H and the coefficients ck’s are complex numbers with |Yfijo ck\\ ∧ 1 an d 1ck| <1 for all k=0,1,...,d-1.In this paper,we prove that an AGQG U=YfkZo ck∧k is realizable,i.e.there are two d by d unitary matrices W and V such that ck=W0kVk0 (0

  3. Transversal Clifford gates on folded surface codes

    Science.gov (United States)

    Moussa, Jonathan E.

    2016-10-01

    Surface and color codes are two forms of topological quantum error correction in two spatial dimensions with complementary properties. Surface codes have lower-depth error detection circuits and well-developed decoders to interpret and correct errors, while color codes have transversal Clifford gates and better code efficiency in the number of physical qubits needed to achieve a given code distance. A formal equivalence exists between color codes and folded surface codes, but it does not guarantee the transferability of any of these favorable properties. However, the equivalence does imply the existence of constant-depth circuit implementations of logical Clifford gates on folded surface codes. We achieve and improve this result by constructing two families of folded surface codes with transversal Clifford gates. This construction is presented generally for qudits of any dimension. The specific application of these codes to universal quantum computation based on qubit fusion is also discussed.

  4. TOURISM IN THE TOURIST AREA "IRON GATES"

    Directory of Open Access Journals (Sweden)

    DINU LOREDANA

    2015-12-01

    Full Text Available This paper wants to highlight the trends of tourist demanding from the touristic area Iron Gates. We will see that the future of tourism include new forms such as those caused by the increased interest in areas with agritourism attractions or areas and portions of parks and nature reserves, which will raise the attractiveness of Danube, putting in a new pole of attraction area. Thus, we conducted a research based on survey among visitors on the tourist area "Iron Gates". The main endpoint based on survey was highlighting the motivation that determined the choice of the tourist area "Iron Gates", but also knowledge of consumer satisfaction for the tourists to the visited area (tourist product studied. The main objectives were, of course, linked with socio - economic and demographic characteristics of tourists to form a clearer picture of the motivational factors involved.

  5. Four-gate transistor analog multiplier circuit

    Science.gov (United States)

    Mojarradi, Mohammad M. (Inventor); Blalock, Benjamin (Inventor); Cristoloveanu, Sorin (Inventor); Chen, Suheng (Inventor); Akarvardar, Kerem (Inventor)

    2011-01-01

    A differential output analog multiplier circuit utilizing four G.sup.4-FETs, each source connected to a current source. The four G.sup.4-FETs may be grouped into two pairs of two G.sup.4-FETs each, where one pair has its drains connected to a load, and the other par has its drains connected to another load. The differential output voltage is taken at the two loads. In one embodiment, for each G.sup.4-FET, the first and second junction gates are each connected together, where a first input voltage is applied to the front gates of each pair, and a second input voltage is applied to the first junction gates of each pair. Other embodiments are described and claimed.

  6. TRANSISTOR IMPLEMENTATION OF REVERSIBLE PRT GATES

    Directory of Open Access Journals (Sweden)

    RASHMI S.B,

    2011-03-01

    Full Text Available Reversible logic has emerged as one of the most important approaches for power optimization with its application in low power VLSI design. Reversible or information lossless circuits have applications in nanotechnology, digital signal processing, communication, computer graphics and cryptography. They are also a fundamental requirement in the emerging field of quantum computing. In this paper, two newoptimized universal gates are proposed. One of them has an ability to operate as a reversible half adder and half subtractor imultaneously. Another one acts only as half adder with minimum transistor count. The reversible gates are evaluated in terms of number of transistor count, critical path, garbage outputs and one to one mapping. Here transistor implementation of the proposed gates is done by using Virtuoso tool of cadence. Based on the results of the analysis, some of the trade-offs are made in the design to improve the efficiency.

  7. Operational life prediction on gating image intensifier

    Science.gov (United States)

    Dong, Yu-hui; Shen, Zhi-guo; Li, Zhong-li

    2009-07-01

    Operational life is one of the important parameters to evaluate second and super second generation image intensifiers. It can be used not only to monitor manufacturing technique in product line, then the technology on photocathode processing, MCP degassing and MCP producing can be adjusted promptly, but also to eliminate the image intensifiers which have hidden risk on operational life as early as possible. Recently gating image intensifiers are used widely, method to estimate the operational life of gating image intensifier related to its practical operate mode and working condition need to be established urgently. The least square method to analyze the operational life test data in product line was introduced in this paper. Now the data can be analyzed with convenient statistic analyze function on Excel. Using "worksheet function" and "chart wizard" and "data analysis" on Excel to do the least square method calculation, spreadsheets are established to do complex data calculation with worksheet functions. Based on them, formulas to monitor the technology parameters were derived, and the conclusion that the operational life was only related to the decrease slope of photocathode exponential fit curve was made. The decrease slope of photocathode sensitivity exponential fit curve and the decrease percent of the exponential fit photocathode sensitivity can be used to evaluate the qualification of the operational life rapidly. The mathematic models for operational life prediction on image intensifier and gating image intensifier are established respectively based on the acceptable values of the decrease percent of the exponential fit photocathode sensitivity and the expecting signal to noise ratio. The equations predicting the operational life related to duty cycle and input light level on gating image intensifier were derived, and the relationship between them were discussed too. The theory foundation were made herein, so the user can select proper gating image

  8. Cyclic groups and quantum logic gates

    Science.gov (United States)

    Pourkia, Arash; Batle, J.; Raymond Ooi, C. H.

    2016-10-01

    We present a formula for an infinite number of universal quantum logic gates, which are 4 by 4 unitary solutions to the Yang-Baxter (Y-B) equation. We obtain this family from a certain representation of the cyclic group of order n. We then show that this discrete family, parametrized by integers n, is in fact, a small sub-class of a larger continuous family, parametrized by real numbers θ, of universal quantum gates. We discuss the corresponding Yang-Baxterization and related symmetries in the concomitant Hamiltonian.

  9. Coherent spaces, Boolean rings and quantum gates

    Science.gov (United States)

    Vourdas, A.

    2016-10-01

    Coherent spaces spanned by a finite number of coherent states, are introduced. Their coherence properties are studied, using the Dirac contour representation. It is shown that the corresponding projectors resolve the identity, and that they transform into projectors of the same type, under displacement transformations, and also under time evolution. The set of these spaces, with the logical OR and AND operations is a distributive lattice, and with the logical XOR and AND operations is a Boolean ring (Stone's formalism). Applications of this Boolean ring into classical CNOT gates with n-ary variables, and also quantum CNOT gates with coherent states, are discussed.

  10. Ultrafast Quantum Gates in Circuit QED

    CERN Document Server

    Romero, G; Wang, Y M; Scarani, V; Solano, E

    2011-01-01

    We present a method of implementing ultrafast two-qubit gates valid for the ultrastrong coupling (USC) and deep strong coupling (DSC) regimes of light-matter interaction, considering state-of-the-art circuit quantum electrodynamics (QED) technology. Our proposal includes a suitable qubit architecture and is based on a four-step sequential displacement of an intracavity mode, operating at a time proportional to the inverse of the resonator frequency. Through ab initio calculations, we show that these quantum gates can be performed at subnanosecond time scales, while keeping the fidelity above 99%.

  11. Slime mould logical gates: exploring ballistic approach

    CERN Document Server

    Adamatzky, Andrew

    2010-01-01

    Plasmodium of \\emph{Physarum polycephalum} is a single cell visible by unaided eye. On a non-nutrient substrate the plasmodium propagates as a traveling localization, as a compact wave-fragment of protoplasm. The plasmodium-localization travels in its originally predetermined direction for a substantial period of time even when no gradient of chemo-attractants is present. We utilize this property of \\emph{Physarum} localizations to design a two-input two-output Boolean logic gates $ \\to $ and $ \\to $. We verify the designs in laboratory experiments and computer simulations. We cascade the logical gates into one-bit half-adder and simulate its functionality.

  12. Advantages of gated silicon single photon detectors

    CERN Document Server

    Lunghi, T; Barreiro, C; Stucki, D; Sanguinetti, B; Zbinden, H

    2012-01-01

    We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and -30{\\deg}C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, whereby a detector clicks some time after having been illuminated.

  13. Fidelity of adiabatic holonomic quantum gates

    Science.gov (United States)

    Malinovsky, Vladimir; Rudin, Sergey

    2016-05-01

    During last few years non-Abelian geometric phases are attracting increasing interest due to possible experimental applications in quantum computation. Here we discuss universal set of holonomic quantum gates using the geometric phase that the qubit wave function acquires after a cyclic evolution. The proposed scheme utilizes ultrafast pulses and provides a possibility to substantially suppress transient population of the ancillary states. Fidelity of the holonomic quantum gates in the presence of dephasing and dissipation is discussed. Example of electron spin qubit system in the InGaN/GaN, GaN/AlN quantum dot is considered in details.

  14. Gate Bias Effects on Samples with Edge Gates in the Quantum Hall Regime

    OpenAIRE

    若林 淳一; 風間 重雄; 長嶋 登志夫

    2001-01-01

    We have fabricated GaAs/AlGaAs heterostructure Hall samples that have edge gate with several widths along both sides of the sample. The gate width dependence of an effect of the gate voltage to the Hall resistance was measured at the middle of a transition region between the adjacent quantum Hall plateaus. The results have been analyzed based on two model functions of current distribution;an exponential type and the modified Beenakker type. The results of the former have shown qualitative agr...

  15. Improved Classical Simulation of Quantum Circuits Dominated by Clifford Gates.

    Science.gov (United States)

    Bravyi, Sergey; Gosset, David

    2016-06-24

    We present a new algorithm for classical simulation of quantum circuits over the Clifford+T gate set. The runtime of the algorithm is polynomial in the number of qubits and the number of Clifford gates in the circuit but exponential in the number of T gates. The exponential scaling is sufficiently mild that the algorithm can be used in practice to simulate medium-sized quantum circuits dominated by Clifford gates. The first demonstrations of fault-tolerant quantum circuits based on 2D topological codes are likely to be dominated by Clifford gates due to a high implementation cost associated with logical T gates. Thus our algorithm may serve as a verification tool for near-term quantum computers which cannot in practice be simulated by other means. To demonstrate the power of the new method, we performed a classical simulation of a hidden shift quantum algorithm with 40 qubits, a few hundred Clifford gates, and nearly 50 T gates.

  16. Self-gated fat-suppressed cardiac cine MRI.

    Science.gov (United States)

    Ingle, R Reeve; Santos, Juan M; Overall, William R; McConnell, Michael V; Hu, Bob S; Nishimura, Dwight G

    2015-05-01

    To develop a self-gated alternating repetition time balanced steady-state free precession (ATR-SSFP) pulse sequence for fat-suppressed cardiac cine imaging. Cardiac gating is computed retrospectively using acquired magnetic resonance self-gating data, enabling cine imaging without the need for electrocardiogram (ECG) gating. Modification of the slice-select rephasing gradients of an ATR-SSFP sequence enables the acquisition of a one-dimensional self-gating readout during the unused short repetition time (TR). Self-gating readouts are acquired during every TR of segmented, breath-held cardiac scans. A template-matching algorithm is designed to compute cardiac trigger points from the self-gating signals, and these trigger points are used for retrospective cine reconstruction. The proposed approach is compared with ECG-gated ATR-SSFP and balanced steady-state free precession in 10 volunteers and five patients. The difference of ECG and self-gating trigger times has a variability of 13 ± 11 ms (mean ± SD). Qualitative reviewer scoring and ranking indicate no statistically significant differences (P > 0.05) between self-gated and ECG-gated ATR-SSFP images. Quantitative blood-myocardial border sharpness is not significantly different among self-gated ATR-SSFP ( 0.61±0.15 mm -1), ECG-gated ATR-SSFP ( 0.61±0.15 mm -1), or conventional ECG-gated balanced steady-state free precession cine MRI ( 0.59±0.15 mm -1). The proposed self-gated ATR-SSFP sequence enables fat-suppressed cardiac cine imaging at 1.5 T without the need for ECG gating and without decreasing the imaging efficiency of ATR-SSFP. © 2014 Wiley Periodicals, Inc.

  17. Tunable pulse-shaping with gated graphene nanoribbons

    DEFF Research Database (Denmark)

    Prokopeva, Ludmila; Emani, Naresh K.; Boltasseva, Alexandra

    2014-01-01

    We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed.......We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed....

  18. Tunable pulse-shaping with gated graphene nanoribbons

    DEFF Research Database (Denmark)

    Prokopeva, Ludmila; Emani, Naresh K.; Boltasseva, Alexandra

    2014-01-01

    We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed.......We propose a pulse-shaper made of gated graphene nanoribbons. Simulations demonstrate tunable control over the shapes of transmitted and reflected pulses using the gating bias. Initial fabrication and characterization of graphene elements is also discussed....

  19. Learning robust pulses for generating universal quantum gates

    Science.gov (United States)

    Dong, Daoyi; Wu, Chengzhi; Chen, Chunlin; Qi, Bo; Petersen, Ian R.; Nori, Franco

    2016-01-01

    Constructing a set of universal quantum gates is a fundamental task for quantum computation. The existence of noises, disturbances and fluctuations is unavoidable during the process of implementing quantum gates for most practical quantum systems. This paper employs a sampling-based learning method to find robust control pulses for generating a set of universal quantum gates. Numerical results show that the learned robust control fields are insensitive to disturbances, uncertainties and fluctuations during the process of realizing universal quantum gates. PMID:27782219

  20. Implementation of Quantum Logic Gates by Nuclear Magnetic Resonance Spectroscopy

    Institute of Scientific and Technical Information of China (English)

    DU Jiang-Feng; WU Ji-Hui; SHI Ming-Jun; HAN Liang; ZHOU Xian-Yi; YE Bang-Jiao; WENG Hui-Ming; HAN Rong-Dian

    2000-01-01

    Using nuclear magnetic resonance techniques with a solution of cytosine molecules, we show an implementation of certain quantum logic gates (including NOT gate, square-root of NOT gate and controlled-NOT gate), which have central importance in quantum computing. In addition, experimental results show that nuclear magnetic resonance spectroscopy can efficiently measure the result of quantum computing without attendant wave-function collapse.

  1. Power Gating Based Ground Bounce Noise Reduction

    Directory of Open Access Journals (Sweden)

    M. Uma Maheswari

    2014-08-01

    Full Text Available As low power circuits are most popular the decrease in supply voltage leads to increase in leakage power with respect to the technology scaling. So for removing this kind of leakages and to provide a better power efficiency many power gating techniques are used. But the leakage due to ground connection to the active part of the circuit is very high rather than all other leakages. As it is mainly due to the back EMF of the ground connection it was called it as ground bounce noise. To reduce this noise different methodologies are designed. In this paper the design of such an efficient technique related to ground bounce noise reduction using power gating circuits and comparing the results using DSCH and Microwind low power tools. In this paper the analysis of adders such as full adders using different types of power gated circuits using low power VLSI design techniques and to present the comparison results between different power gating methods.

  2. Is Bill Gates Getting Too Powerful?

    Institute of Scientific and Technical Information of China (English)

    郑娟娟

    2004-01-01

    Plenty of technology genius lie awake nights anxiously wondering what Bill Gates is up to and how to grow up to be just like him. Microsoft, the company he heads, already owns the operating systems that run most of the world's personal computers. But good comput-

  3. Corner Office Interview: Gates Foundation's Deborah Jacobs

    Science.gov (United States)

    Miller, Rebecca

    2010-01-01

    U.S. libraries gave the world a top talent when Deborah Jacobs left her transformational role as City Librarian of Seattle in 2008 to head the Bill & Melinda Gates Foundation's Global Libraries program, the international sibling to the U.S. Libraries program. The initiative fosters national-scale projects with grantees in transitioning countries…

  4. Gates Fund Creates Plan for College Completion

    Science.gov (United States)

    Gose, Ben

    2008-01-01

    The Bill & Melinda Gates Foundation plans to spend several hundred million dollars over the next five years to double the number of low-income young people who complete a college degree or certificate program by age 26. Foundation officials described the ambitious plan to an exclusive group of education leaders, citing 2025 as a target goal. If…

  5. Voltage-gated lipid ion channels

    DEFF Research Database (Denmark)

    Blicher, Andreas; Heimburg, Thomas Rainer

    2013-01-01

    Synthetic lipid membranes can display channel-like ion conduction events even in the absence of proteins. We show here that these events are voltage-gated with a quadratic voltage dependence as expected from electrostatic theory of capacitors. To this end, we recorded channel traces and current...

  6. High fidelity quantum gates with vibrational qubits.

    Science.gov (United States)

    Berrios, Eduardo; Gruebele, Martin; Shyshlov, Dmytro; Wang, Lei; Babikov, Dmitri

    2012-11-26

    Physical implementation of quantum gates acting on qubits does not achieve a perfect fidelity of 1. The actual output qubit may not match the targeted output of the desired gate. According to theoretical estimates, intrinsic gate fidelities >99.99% are necessary so that error correction codes can be used to achieve perfect fidelity. Here we test what fidelity can be accomplished for a CNOT gate executed by a shaped ultrafast laser pulse interacting with vibrational states of the molecule SCCl(2). This molecule has been used as a test system for low-fidelity calculations before. To make our test more stringent, we include vibrational levels that do not encode the desired qubits but are close enough in energy to interfere with population transfer by the laser pulse. We use two complementary approaches: optimal control theory determines what the best possible pulse can do; a more constrained physical model calculates what an experiment likely can do. Optimal control theory finds pulses with fidelity >0.9999, in excess of the quantum error correction threshold with 8 × 10(4) iterations. On the other hand, the physical model achieves only 0.9992 after 8 × 10(4) iterations. Both calculations converge as an inverse power law toward unit fidelity after >10(2) iterations/generations. In principle, the fidelities necessary for quantum error correction are reachable with qubits encoded by molecular vibrations. In practice, it will be challenging with current laboratory instrumentation because of slow convergence past fidelities of 0.99.

  7. An electronically controlled automatic security access gate

    Directory of Open Access Journals (Sweden)

    Jonathan A. ENOKELA

    2014-11-01

    Full Text Available The security challenges being encountered in many places require electronic means of controlling access to communities, recreational centres, offices, and homes. The electronically controlled automated security access gate being proposed in this work helps to prevent an unwanted access to controlled environments. This is achieved mainly through the use of a Radio Frequency (RF transmitter-receiver pair. In the design a microcontroller is programmed to decode a given sequence of keys that is entered on a keypad and commands a transmitter module to send out this code as signal at a given radio frequency. Upon reception of this RF signal by the receiver module, another microcontroller activates a driver circuitry to operate the gate automatically. The codes for the microcontrollers were written in C language and were debugged and compiled using the KEIL Micro vision 4 integrated development environment. The resultant Hex files were programmed into the memories of the microcontrollers with the aid of a universal programmer. Software simulation was carried out using the Proteus Virtual System Modeling (VSM version 7.7. A scaled-down prototype of the system was built and tested. The electronically controlled automated security access gate can be useful in providing security for homes, organizations, and automobile terminals. The four-character password required to operate the gate gives the system an increased level of security. Due to its standalone nature of operation the system is cheaper to maintain in comparison with a manually operated type.

  8. Optimal Manipulations with Qubits Universal NOT Gate

    CERN Document Server

    Buzek, V; Werner, R

    1999-01-01

    It is not a problem to complement a classical bit, i.e. to change the value of a bit, a 0 to a 1 and vice versa. This is accomplished by a NOT gate. Complementing a qubit in an unknown state, however, is another matter. We show that this operation cannot be done perfectly. We define the Universal-NOT (U-NOT) gate which out of N identically prepared pure input qubits generates M output qubits in a state which is as close as possible to the perfect complement. This gate can be realized by classical estimation and subsequent re-preparation of complements of the estimated state. Its fidelity is therefore equal to the fidelity F= (N+1)/(N+2) of optimal estimation, and does not depend on the required number of outputs. We also show that when some additional a priori information about the state of input qubit is available, than the fidelity of the quantum NOT gate can be much better than the fidelity of estimation.

  9. Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

    Science.gov (United States)

    Darbandy, Ghader; Gneiting, Thomas; Alius, Heidrun; Alvarado, Joaquín; Cerdeira, Antonio; Iñiguez, Benjamin

    2013-11-01

    Direct Tunneling (DT) and Trap Assisted Tunneling (TAT) gate leakage current parameters have been extracted and verified considering automatic parameter extraction approach. The industry standard package IC-CAP is used to extract our leakage current model parameters. The model is coded in Verilog-A and the comparison between the model and measured data allows to obtain the model parameter values and parameters correlations/relations. The model and parameter extraction techniques have been used to study the impact of parameters in the gate leakage current based on the extracted parameter values. It is shown that the gate leakage current depends on the interfacial barrier height more strongly than the barrier height of the dielectric layer. There is almost the same scenario with respect to the carrier effective masses into the interfacial layer and the dielectric layer. The comparison between the simulated results and available measured gate leakage current transistor characteristics of Trigate MOSFETs shows good agreement.

  10. Online junction temperature measurement using peak gate current

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

    2015-01-01

    A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

  11. Three qubit quantum phase gate based on cavity QED

    Science.gov (United States)

    Chang, Juntao; Zubairy, M. Suhail

    2004-10-01

    We describe a three qubit quantum phase gate in which the three qubits are represented by the photons in a three-modes optical cavity. This gate is implemented by passing a four-level atom in a cascade configuration through the cavity. We shall discuss the application of such a quantum phase gate to quantum searching.

  12. Normal p50 gating in unmedicated schizophrenia outpatients

    DEFF Research Database (Denmark)

    Arnfred, Sidse M; Chen, Andrew C.N.; Glenthøj, Birte Y

    2003-01-01

    The hypothesis of a sensory gating defect in schizophrenia has been supported by studies demonstrating deficient auditory P50 gating in patients. P50 gating is the relative attenuation of P50 amplitude in the auditory evoked potential following the second auditory stimulus of a stimulus pair....

  13. Rapidly Reconfigurable All-Optical Universal Logic Gates

    Energy Technology Data Exchange (ETDEWEB)

    Goddard, L L; Kallman, J S; Bond, T C

    2006-06-21

    We present designs and simulations for a highly cascadable, rapidly reconfigurable, all-optical, universal logic gate. We will discuss the gate's expected performance, e.g. speed, fanout, and contrast ratio, as a function of the device layout and biasing conditions. The gate is a three terminal on-chip device that consists of: (1) the input optical port, (2) the gate selection port, and (3) the output optical port. The device can be built monolithically using a standard multiple quantum well graded index separate confinement heterostructure laser configuration. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog electrical or optical signal at the gate selection port. Specifically, the same gate can be selected to execute one of the 2 basic unary operations (NOT or COPY), or one of the 6 binary operations (OR, XOR, AND, NOR, XNOR, or NAND), or one of the many logic operations involving more than two inputs. The speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal modulation speed of a laser, which can be on the order of tens of GHz. The reprogrammable nature of the universal gate offers maximum flexibility and interchangeability for the end user since the entire application of a photonic integrated circuit built from cascaded universal logic gates can be changed simply by adjusting the gate selection port signals.

  14. LIFE CYCLE ASSESSMENT FOR OIL PALM BASED PLYWOOD: A GATE-TO-GATE CASE STUDY

    OpenAIRE

    M. Shamim Ahmad; Vijaya Subramaniam; Halimah Mohammad; Anis Mokhtar; B. S. Ismail

    2014-01-01

    Life Cycle Assessment (LCA) is an important tool for identifying potential environmental impacts associated with the production of palm based plywood. This study is to make available the life cycle inventory for gate-to-gate data so that the environmental impact posed by oil palm based plywood production can be assessed. Conducting an LCA on the palm based plywood that are derived from the wastes of the oil palm industry is a first step towards performing green environmental product. Therefor...

  15. Allosteric gating mechanism underlies the flexible gating of KCNQ1 potassium channels.

    Science.gov (United States)

    Osteen, Jeremiah D; Barro-Soria, Rene; Robey, Seth; Sampson, Kevin J; Kass, Robert S; Larsson, H Peter

    2012-05-01

    KCNQ1 (Kv7.1) is a unique member of the superfamily of voltage-gated K(+) channels in that it displays a remarkable range of gating behaviors tuned by coassembly with different β subunits of the KCNE family of proteins. To better understand the basis for the biophysical diversity of KCNQ1 channels, we here investigate the basis of KCNQ1 gating in the absence of β subunits using voltage-clamp fluorometry (VCF). In our previous study, we found the kinetics and voltage dependence of voltage-sensor movements are very similar to those of the channel gate, as if multiple voltage-sensor movements are not required to precede gate opening. Here, we have tested two different hypotheses to explain KCNQ1 gating: (i) KCNQ1 voltage sensors undergo a single concerted movement that leads to channel opening, or (ii) individual voltage-sensor movements lead to channel opening before all voltage sensors have moved. Here, we find that KCNQ1 voltage sensors move relatively independently, but that the channel can conduct before all voltage sensors have activated. We explore a KCNQ1 point mutation that causes some channels to transition to the open state even in the absence of voltage-sensor movement. To interpret these results, we adopt an allosteric gating scheme wherein KCNQ1 is able to transition to the open state after zero to four voltage-sensor movements. This model allows for widely varying gating behavior, depending on the relative strength of the opening transition, and suggests how KCNQ1 could be controlled by coassembly with different KCNE family members.

  16. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

    OpenAIRE

    Kilchytska V.; Alvarado J; Collaert N.; Rooyackers R.; Put S.; Simoen E.; Claeys C.; Flandre D.

    2011-01-01

    This paper analyzes the influence of negative charges (NC) located at the gate edges on the advanced MOSFETs behavior, paying particular attention to the subthreshold slope, S, maximum transconductance, Gmmax, and analog figures of merit, such as transconductance over drain current ratio, Gm/ID, output conductance, GD, Early voltage, VEA, and intrinsic gain. General trends obtained by two-dimensional numerical simulations on double-gate (DG) structures are whenever possible qualitatively corr...

  17. Dosimetry applications in GATE Monte Carlo toolkit.

    Science.gov (United States)

    Papadimitroulas, Panagiotis

    2017-02-21

    Monte Carlo (MC) simulations are a well-established method for studying physical processes in medical physics. The purpose of this review is to present GATE dosimetry applications on diagnostic and therapeutic simulated protocols. There is a significant need for accurate quantification of the absorbed dose in several specific applications such as preclinical and pediatric studies. GATE is an open-source MC toolkit for simulating imaging, radiotherapy (RT) and dosimetry applications in a user-friendly environment, which is well validated and widely accepted by the scientific community. In RT applications, during treatment planning, it is essential to accurately assess the deposited energy and the absorbed dose per tissue/organ of interest, as well as the local statistical uncertainty. Several types of realistic dosimetric applications are described including: molecular imaging, radio-immunotherapy, radiotherapy and brachytherapy. GATE has been efficiently used in several applications, such as Dose Point Kernels, S-values, Brachytherapy parameters, and has been compared against various MC codes which are considered as standard tools for decades. Furthermore, the presented studies show reliable modeling of particle beams when comparing experimental with simulated data. Examples of different dosimetric protocols are reported for individualized dosimetry and simulations combining imaging and therapy dose monitoring, with the use of modern computational phantoms. Personalization of medical protocols can be achieved by combining GATE MC simulations with anthropomorphic computational models and clinical anatomical data. This is a review study, covering several dosimetric applications of GATE, and the different tools used for modeling realistic clinical acquisitions with accurate dose assessment. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  18. Redox control of 20S proteasome gating.

    Science.gov (United States)

    Silva, Gustavo M; Netto, Luis E S; Simões, Vanessa; Santos, Luiz F A; Gozzo, Fabio C; Demasi, Marcos A A; Oliveira, Cristiano L P; Bicev, Renata N; Klitzke, Clécio F; Sogayar, Mari C; Demasi, Marilene

    2012-06-01

    The proteasome is the primary contributor in intracellular proteolysis. Oxidized or unstructured proteins can be degraded via a ubiquitin- and ATP-independent process by the free 20S proteasome (20SPT). The mechanism by which these proteins enter the catalytic chamber is not understood thus far, although the 20SPT gating conformation is considered to be an important barrier to allowing proteins free entrance. We have previously shown that S-glutathiolation of the 20SPT is a post-translational modification affecting the proteasomal activities. The goal of this work was to investigate the mechanism that regulates 20SPT activity, which includes the identification of the Cys residues prone to S-glutathiolation. Modulation of 20SPT activity by proteasome gating is at least partially due to the S-glutathiolation of specific Cys residues. The gate was open when the 20SPT was S-glutathiolated, whereas following treatment with high concentrations of dithiothreitol, the gate was closed. S-glutathiolated 20SPT was more effective at degrading both oxidized and partially unfolded proteins than its reduced form. Only 2 out of 28 Cys were observed to be S-glutathiolated in the proteasomal α5 subunit of yeast cells grown to the stationary phase in glucose-containing medium. We demonstrate a redox post-translational regulatory mechanism controlling 20SPT activity. S-glutathiolation is a post-translational modification that triggers gate opening and thereby activates the proteolytic activities of free 20SPT. This process appears to be an important regulatory mechanism to intensify the removal of oxidized or unstructured proteins in stressful situations by a process independent of ubiquitination and ATP consumption. Antioxid. Redox Signal. 16, 1183-1194.

  19. A New Design Technique of Reversible BCD Adder Based on NMOS With Pass Transistor Gates

    CERN Document Server

    Hossain, Md Sazzad; Rahman, Md Motiur; Hossain, A S M Delowar; Hasan, Md Minul

    2012-01-01

    In this paper, we have proposed a new design technique of BCD Adder using newly constructed reversible gates are based on NMOS with pass transistor gates, where the conventional reversible gates are based on CMOS with transmission gates. We also compare the proposed reversible gates with the conventional CMOS reversible gates which show that the required number of Transistors is significantly reduced.

  20. Application of fast-moving magnetic-flux-quanta in constructing an AND gate and an OR gate

    Energy Technology Data Exchange (ETDEWEB)

    Jung, K. R. [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Kang, J. H. [University of Incheon, Incheon (Korea, Republic of)

    2004-08-15

    In developing an arithmetic logic unit (ALU) with new electronic devices, constructing an OR gate and an AND gate is crucial. In this work, we have designed, fabricated, and tested an OR gate and an AND gate by using rapid single flux quantum (RSFQ) logic. We constructed an AND gate with two D flip-flops and an OR gate with the combination of a confluence buffer and a D flip-flop. The role of the D flip-flop in an OR gate is to output the data when clocked. DC/SFQ circuits were used to generate data and clock pulses in testing the gates. Outputs were read with RS flip-flop type readout circuits and displayed on an oscilloscope. Input frequencies of 10 kHz and 1 MHz were used in this work. We observed correct operations of the gates. The bandwidth of the oscilloscope limited the maximum frequency of our measurements. The logic gates themselves could operate at tens of GHz. We measured the bias margins of the D flip-flop and the confluence buffer of the OR gate, and their values were +-39% and +-23 %, respectively. We also measured the operation margin of the AND gate to be +-25 %. The circuit was measured at liquid-helium temperature.

  1. ALL OPTICAL IMPLEMENTATION OF HIGH SPEED AND LOW POWER REVERSIBLE FULL ADDER USING SEMICONDUCTOR OPTICAL AMPLIFIER BASED MACH-ZEHNDER INTERFEROMETER

    Directory of Open Access Journals (Sweden)

    R. M. Bommi

    2014-01-01

    Full Text Available In the recent years reversible logic design has promising applications in low power computing, optical computing, quantum computing. VLSI design mainly concentrates on low power logic circuit design. In the present scenario researchers have made implementations of reversible logic gates in optical domain for its low energy consumption and high speed. This study is all about designing a reversible Full adder using combination of all optical Toffoli and all optical TNOR and to compare it with the Full adder designed using all optical Toffoli gate in terms of optical cost. All optical TNOR gate can work as a replacement of existing NAND based All optical Toffoli Gate (TG. The gates are designed using Mach-Zehnder Interferometer (MZI based optical switch. The proposed system is developed with the basic of reversibility to design all optical full Adder implemented with CMOS transistors. The design is efficient in terms of both architecture and in power consumption.

  2. A Scheme for Simulation of Quantum Gates by Abelian Anyons

    Institute of Scientific and Technical Information of China (English)

    沈尧; 艾青; 龙桂鲁

    2011-01-01

    Anyons can be used to realize quantum computation, because they are two-level systems in two dimensions. In this paper, we propose a scheme to simulate single-qubit gates and CNOT gate using Abelian anyons in the Kitaev model. Two pairs of anyons (six spins) are used to realize single-qubit gates, while ten spins are needed for the CNOT gate. Based on these quantum gates, we show how to realize the Grover algorithm in a two-qubit system.

  3. The analysis of injection molding defects caused by gate vestiges

    Directory of Open Access Journals (Sweden)

    T. Tabi

    2015-04-01

    Full Text Available Issues of product safety are the most serious problems of an injection molded product due to their risk to human health. Such a safety problem can be the needle-shaped vestige at the gate zone of injection molded products, called a gate vestige. Only observations of the formation of gate vestiges can be found in the literature, but the processing parameters influencing their dimensions, especially their height have not been studied yet. Our goal was to study the effect of various injection molding processing parameters and gate constructions on gate vestige formation.

  4. Ant Colony Algorithm and Simulation for Robust Airport Gate Assignment

    Directory of Open Access Journals (Sweden)

    Hui Zhao

    2014-01-01

    Full Text Available Airport gate assignment is core task for airport ground operations. Due to the fact that the departure and arrival time of flights may be influenced by many random factors, the airport gate assignment scheme may encounter gate conflict and many other problems. This paper aims at finding a robust solution for airport gate assignment problem. A mixed integer model is proposed to formulate the problem, and colony algorithm is designed to solve this model. Simulation result shows that, in consideration of robustness, the ability of antidisturbance for airport gate assignment scheme has much improved.

  5. Edge-on gating effect in molecular wires.

    Science.gov (United States)

    Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

    2015-02-11

    This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

  6. Free-exciton states in crystalline GaTe

    Science.gov (United States)

    Wan, J. Z.; Brebner, J. L.; Leonelli, R.

    1995-12-01

    Polarized properties of both the singlet and triplet ground exciton states in the photoluminescence and transmission spectra of crystalline GaTe are explained based on the possible symmetry properties of the energy band edge of GaTe. Some experimental results about excited exciton states in GaTe are presented and discussed. The energy positions of exciton series in GaTe follow the three-dimensional direct allowed Wannier exciton formula just as in the the other III-VI layered compounds of GaSe and InSe. The nonthermalized, ``hot'' nature of excitons inside GaTe under higher optical excitation intensities is also discussed.

  7. Realization of Two-Qutrit Quantum Gates with Control Pulses

    Institute of Scientific and Technical Information of China (English)

    ZHANG Jie; DI Yao-Min; WEI Hai-Rui

    2009-01-01

    We investigate the realization of 2-qutrit logic gate in a bipartite 3-level system with qusi-Ising interaction. On the basis of Caftan decomposition of matrices, the unitary matrices of 2-qutrit are factorized into products of a series of realizable matrices. It is equivalent to exerting a certain control field on the system, and the control goal is usually gained by a sequence of control pulses. The general discussion on the realization of 2-qutrit logic gate is made first, and then the realization of the ternary SWAP gate and the ternary gate are discussed specifically, and the sequences of control pulses and drift processes implementing these gates are given.

  8. Sensitivity Analysis of MEMS Flexure FET with Multiple Gates

    Directory of Open Access Journals (Sweden)

    K.Spandana

    2016-02-01

    Full Text Available This paper deals with the design and modelling of Flexure FET and the FETs are the one of the important fundamental devices in electronic devices.. In this paper we are going analyse one of the MEMS Flexure Gate Field Effect Transistors. Here we will design gate of the FLEXURE FET with different type of materials and with different structure and we made the comparison between all the structures. We apply pull-in voltage to the Gate with respect to the change in the gate voltage the respective displacement of the gate changes which reflect the change in the drain current and sensitivity.

  9. Variable Block Carry Skip Logic using Reversible Gates

    CERN Document Server

    Islam, Md Rafiqul; Karim, Muhammad Rezaul; Mahmud, Abdullah Al; Babu, Hafiz Md Hasan

    2010-01-01

    Reversible circuits have applications in digital signal processing, computer graphics, quantum computation and cryptography. In this paper, a generalized k*k reversible gate family is proposed and a 3*3 gate of the family is discussed. Inverter, AND, OR, NAND, NOR, and EXOR gates can be realized by this gate. Implementation of a full-adder circuit using two such 3*3 gates is given. This full-adder circuit contains only two reversible gates and produces no extra garbage outputs. The proposed full-adder circuit is efficient in terms of gate count, garbage outputs and quantum cost. A 4-bit carry skip adder is designed using this full-adder circuit and a variable block carry skip adder is discussed. Necessary equations required to evaluate these adder are presented.

  10. Reduction of the reversible circuits gate complexity without using the equivalent replacement tables for the gate compositions

    Directory of Open Access Journals (Sweden)

    D. V. Zakablukov

    2014-01-01

    Full Text Available The subject of study of this paper is reversible logic circuits. The irreversibility of computation can lead in the future to significant energy loss during the calculation process. Reversible circuits can be widely used in devices operating under conditions of limited computational resources.Presently, the problem of reversible logic synthesis is widely studied. The task a synthesis algorithm can face with is to reduce the gate complexity of synthesized circuit. One way to solve this problem is to use equivalent replacement tables for the gate compositions. The disadvantage of this approach is that it is necessary to build replacement tables, it takes a long time to find the replacement in the table, and there is no way to build an appropriate universal replacement table for arbitrary reversible circuit. The aim of this paper is to develop the solution for the problem of gate complexity reduction for the reversible circuits without using equivalent replacement tables for the gate compositions.This paper makes a generalization of the k-CNOT gate for the case of zero value at some of the gate control inputs. To describe such gates it suggests using a set of direct control inputs and a set of inverted ones. A definition of the independence of two reversible gates is introduced. Two independent gates standing next to each other in the circuit can be swapped without changing the circuit result transformation. Various conditions of the independence of two reversible gates are considered including conditions imposed to the set of direct control inputs and the set of inverted ones. It is proved that two gates are independent if there is, at least, one common control input, which differs only by the type (direct or inverted.Various equivalent replacements of two k-CNOT gates compositions and its conditions imposed to the set of direct control inputs and to the set of inverted ones are considered. The proof of correctness for such replacements is

  11. Gating of Permanent Molds for Aluminum Casting

    Energy Technology Data Exchange (ETDEWEB)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-01-01

    This report summarizes a two-year project, DE-FC07-011D13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was to determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings. Equipment and procedure for real time X-Ray radiography of molten aluminum flow into permanent molds have been developed. Other studies have been conducted using water flow and behavior of liquid aluminum in sand mold using real time photography. This investigation utilizes graphite molds transparent to X-Rays making it possible to observe the flow pattern through a number of vertically oriented grating systems. These have included systems that are choked at the base of a rounded vertical sprue and vertical gating systems with a variety of different ingates into the bottom of a mold cavity. These systems have also been changed to include gating systems with vertical and horizontal gate configurations. Several conclusions can be derived from this study. A sprue-well, as designed in these experiments, does not eliminate the vena contracta. Because of the swirling at the sprue-base, the circulating metal begins to push the entering metal stream toward the open runner mitigating the intended effect of the sprue-well. Improved designs of

  12. GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

    2011-02-21

    GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

  13. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  14. Gated viewing laser imaging with compressive sensing.

    Science.gov (United States)

    Li, Li; Wu, Lei; Wang, Xingbin; Dang, Ersheng

    2012-05-10

    We present a prototype of gated viewing laser imaging with compressive sensing (GVLICS). By a new framework named compressive sensing, it is possible for us to perform laser imaging using a single-pixel detector where the transverse spatial resolution is obtained. Moreover, combining compressive sensing with gated viewing, the three-dimensional (3D) scene can be reconstructed by the time-slicing technique. The simulations are accomplished to evaluate the characteristics of the proposed GVLICS prototype. Qualitative analysis of Lissajous-type eye-pattern figures indicates that the range accuracy of the reconstructed 3D images is affected by the sampling rate, the image's noise, and the complexity of the scenes.

  15. SWNT array resonant gate MOS transistor.

    Science.gov (United States)

    Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  16. SWNT array resonant gate MOS transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arun, A; Salet, P; Ionescu, A M [NanoLab, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne (Switzerland); Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F, E-mail: marcelo.goffman@cea.fr [Laboratoire d' Electronique Moleculaire, SPEC (CNRS URA 2454), IRAMIS, CEA, Gif-sur-Yvette (France)

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  17. FUZZY KNOWLEDGE ACQUIREMENT IN GATE DESIGN

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    In order to reduce time and cost in engineering design, such as gate design, integral field knowledge must be obtained efficiently. After studying ID3 and its improved methods, a new algorithm(Fuzzy ID3)and its main concepts are presented to overcome some disadvantage in classical ID3 algorithms. In its application of gate design, fuzzy knowledge gotten by the new algorithm is more efficient than the knowledge by other ID3 algorithms, the set of fuzzy knowledge is much smaller than that of knowledge by classical ID3 algorithms. On the other hand, fuzzy knowledge represents field data more naturally to the way of buman thinking and more robust in tolerating imprecise,conflicting and missing information.

  18. Gated Detection Measurements of Phosphorescence Lifetimes

    Directory of Open Access Journals (Sweden)

    Yordan Kostov

    2004-10-01

    Full Text Available A low-cost, gated system for measurements of phosphorescence lifetimes is presented. An extensive description of the system operating principles and metrological characteristics is given. Remarkably, the system operates without optical filtering of the LED excitation source. A description of a practical system is also given and its performance is discussed. Because the device effectively suppresses high-level background fluorescence and scattered light, it is expected to find wide-spread application in bioprocess, environmental and biomedical fields.

  19. Modeling Electrolytically Top-Gated Graphene

    Directory of Open Access Journals (Sweden)

    Mišković ZL

    2010-01-01

    Full Text Available Abstract We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson–Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene’s doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.

  20. Re-opening of Gate C

    CERN Multimedia

    TS-FM Group

    2006-01-01

    From 3rd April to 1st December 2006, Gate C (Satigny) will be open to pedestrians and vehicles (except delivery vehicles) from Monday to Friday, excluding official holidays, between 8.00 a.m. and 9.00 a.m. for those entering the site and between 5.00 p.m. and 6.00 p.m. for those leaving the site. TS-FM Group Reception and Access Control Service

  1. Re-opening of Gate C

    CERN Multimedia

    2006-01-01

    From 3rd April to 1st December 2006, Gate C (Satigny) will be open to pedestrians and vehicles (except delivery vehicles) from Mondays to Fridays, excluding official holidays, between 8.00 a.m. and 9.00 a.m. for those entering the site and between 5.00 p.m. and 6.00 p.m. for those leaving the site. TS-FM Group Reception and Access Control Service

  2. Bimetal switches in an AND logic gate

    Science.gov (United States)

    Lubrica, Joel V.; Lubrica, Quantum Yuri B.

    2016-09-01

    In this frontline, we use bimetal switches to provide inputs in an electrical AND logic gate. These switches can be obtained from the pre-heat starters of fluorescent lamps, by safely removing the glass enclosure. They may be activated by small open flames. This frontline has a historical aspect because fluorescent lamps, together with pre-heat starters, are now being replaced by compact fluorescent, halogen, and LED lamps.

  3. Advantages of gated silicon single photon detectors

    Science.gov (United States)

    Legré, Matthieu; Lunghi, Tommaso; Stucki, Damien; Zbinden, Hugo

    2013-05-01

    We present gated silicon single photon detectors based on two commercially available avalanche photodiodes (APDs) and one customised APD from ID Quantique SA. This customised APD is used in a commercially available device called id110. A brief comparison of the two commercial APDs is presented. Then, the charge persistence effect of all of those detectors that occurs just after a strong illumination is shown and discussed.

  4. Sensorimotor gating deficits in multiple system atrophy

    DEFF Research Database (Denmark)

    Zoetmulder, Marielle; Biernat, Heidi Bryde; Nikolic, Miki

    2014-01-01

    Prepulse inhibition (PPI) of the auditory blink reflex is a measure of sensorimotor gating, which reflects an organism's ability to filter out irrelevant sensory information. PPI has never been studied in patients with multiple system atrophy (MSA), although sensorimotor deficits are frequently...... associated with synucleinopathies. We investigated whether alterations in PPI were more pronounced in MSA compared with Parkinson's disease (PD), idiopathic rapid eye movement sleep behavior disorder (iRBD) and healthy controls....

  5. Voltage Gated Ion Channel Function: Gating, Conduction, and the Role of Water and Protons

    Energy Technology Data Exchange (ETDEWEB)

    Kariev, Alisher M.; Green, Michael E.

    2012-02-26

    Ion channels, which are found in every biological cell, regulate the concentration of electrolytes, and are responsible for multiple biological functions, including in particular the propagation of nerve impulses. The channels with the latter function are gated (opened) by a voltage signal, which allows Na+ into the cell and K+ out. These channels have several positively charged amino acids on a transmembrane domain of their voltage sensor, and it is generally considered, based primarily on two lines of experimental evidence, that these charges move with respect to the membrane to open the channel. At least three forms of motion, with greatly differing extents and mechanisms of motion, have been proposed. There is a “gating current”, a capacitative current preceding the channel opening, that corresponds to several charges (for one class of channel typically 12–13) crossing the membrane field, which may not require protein physically crossing a large fraction of the membrane. The coupling to the opening of the channel would in these models depend on the motion. The conduction itself is usually assumed to require the “gate” of the channel to be pulled apart to allow ions to enter as a section of the protein partially crosses the membrane, and a selectivity filter at the opposite end of the channel determines the ion which is allowed to pass through. We will here primarily consider K+ channels, although Na+ channels are similar. We propose that the mechanism of gating differs from that which is generally accepted, in that the positively charged residues need not move (there may be some motion, but not as gating current). Instead, protons may constitute the gating current, causing the gate to open; opening consists of only increasing the diameter at the gate from approximately 6 Å to approximately 12 Å. We propose in addition that the gate oscillates rather than simply opens, and the ion experiences a barrier to its motion across the channel that is tuned

  6. Voltage Gated Ion Channel Function: Gating, Conduction, and the Role of Water and Protons

    Directory of Open Access Journals (Sweden)

    Alisher M. Kariev

    2012-02-01

    Full Text Available Ion channels, which are found in every biological cell, regulate the concentration of electrolytes, and are responsible for multiple biological functions, including in particular the propagation of nerve impulses. The channels with the latter function are gated (opened by a voltage signal, which allows Na+ into the cell and K+ out. These channels have several positively charged amino acids on a transmembrane domain of their voltage sensor, and it is generally considered, based primarily on two lines of experimental evidence, that these charges move with respect to the membrane to open the channel. At least three forms of motion, with greatly differing extents and mechanisms of motion, have been proposed. There is a “gating current”, a capacitative current preceding the channel opening, that corresponds to several charges (for one class of channel typically 12–13 crossing the membrane field, which may not require protein physically crossing a large fraction of the membrane. The coupling to the opening of the channel would in these models depend on the motion. The conduction itself is usually assumed to require the “gate” of the channel to be pulled apart to allow ions to enter as a section of the protein partially crosses the membrane, and a selectivity filter at the opposite end of the channel determines the ion which is allowed to pass through. We will here primarily consider K+ channels, although Na+ channels are similar. We propose that the mechanism of gating differs from that which is generally accepted, in that the positively charged residues need not move (there may be some motion, but not as gating current. Instead, protons may constitute the gating current, causing the gate to open; opening consists of only increasing the diameter at the gate from approximately 6 Å to approximately 12 Å. We propose in addition that the gate oscillates rather than simply opens, and the ion experiences a barrier to its motion across the

  7. Opening of the New Gate E (Reminder)

    CERN Multimedia

    Relations with the Host States Service

    2004-01-01

    Since 1 November 2004, members of the CERN personnel holding a legitimation document issued by the Swiss Federal Department of Foreign Affairs may use Gate E ("Charles de Gaulle Gate"), located at the West end of the Meyrin Site, from Monday to Friday, except on official CERN holidays, from 7.30 a.m. to 9.30 a.m. to enter the site and from 4.30 p.m. to 6.30 p.m. to leave the site. All persons using Gate E must automatically present for inspection by the Guard on duty: either their azure B-type CERN access card (the letter B precedes the identification number printed on the card); or, during a transitional period lasting until 17 December 2004, their blue C-type CERN access card (the letter C precedes the identification number printed on the card) and their legitimation document issued by the Swiss Federal Department of Foreign Affairs («Carte de légitimation» or «Attestation de fonctions»). The new azure B-type CERN access card is issued, where appropria...

  8. Gated Luminescence Imaging of Silicon Nanoparticles

    Science.gov (United States)

    Joo, Jinmyoung; Liu, Xiangyou; Kotamraju, Venkata Ramana; Ruoslahti, Erkki; Nam, Yoonkey; Sailor, Michael J.

    2016-01-01

    The luminescence lifetime of nanocrystalline silicon is typically on the order of microseconds, significantly longer than the nanosecond lifetimes exhibited by fluorescent molecules naturally present in cells and tissues. Time-gated imaging, where the image is acquired at a time after termination of an excitation pulse, allows discrimination of a silicon nanoparticle probe from these endogenous signals. Because of the microsecond time scale for silicon emission, time-gated imaging is relatively simple to implement for this biocompatible and nontoxic probe. Here a time-gated system with ~10 ns resolution is described, using an intensified CCD camera and pulsed LED or laser excitation sources. The method is demonstrated by tracking the fate of mesoporous silicon nanoparticles containing the tumor-targeting peptide iRGD, administered by retro-orbital injection into live mice. Imaging of such systemically administered nanoparticles in vivo is particularly challenging because of the low concentration of probe in the targeted tissues and relatively high background signals from tissue autofluorescence. Contrast improvements of >100-fold (relative to steady-state imaging) is demonstrated in the targeted tissues. PMID:26034817

  9. Quantum superreplication of states and gates

    Science.gov (United States)

    Chiribella, Giulio; Yang, Yuxiang

    2016-06-01

    Although the no-cloning theorem forbids perfect replication of quantum information, it is sometimes possible to produce large numbers of replicas with vanishingly small error. This phenomenon, known as quantum superreplication, can occur for both quantum states and quantum gates. The aim of this paper is to review the central features of quantum superreplication and provide a unified view of existing results. The paper also includes new results. In particular, we show that when quantum superreplication can be achieved, it can be achieved through estimation up to an error of size O( M/ N 2), where N and M are the number of input and output copies, respectively. Quantum strategies still offer an advantage for superreplication in that they allow for exponentially faster reduction of the error. Using the relation with estimation, we provide i) an alternative proof of the optimality of Heisenberg scaling in quantum metrology, ii) a strategy for estimating arbitrary unitary gates with a mean square error scaling as log N/ N 2, and iii) a protocol that generates O( N 2) nearly perfect copies of a generic pure state U |0> while using the corresponding gate U only N times. Finally, we point out that superreplication can be achieved using interactions among k systems, provided that k is large compared to M 2/ N 2.

  10. Gate manipulation of DNA capture into nanopores.

    Science.gov (United States)

    He, Yuhui; Tsutsui, Makusu; Fan, Chun; Taniguchi, Masateru; Kawai, Tomoji

    2011-10-25

    Understanding biophysics governing DNA capture into a nanopore and establishing a manipulation system for the capture process are essential for nanopore-based genome sequencing. In this work, the functionality of extended electric field and electroosmotic flow (EOF) during the capture stage and their dependence on gate voltage, U(G), are investigated. We demonstrate that while both the electric field and EOF within a cis chamber make long-distance contributions to DNA capture around the pore mouth, the former effect is always capturing, while the latter causes trapping or blocking of the molecule depending on the magnitude of the gate voltage, U(G): an anionic EOF induced by high U(G) is capable of doubling the DNA trapping speed and thus the absorption radius in the cis chamber, whereas a cationic EOF by low U(G) would substantially offset the trapping effort by the electric field and even totally block DNA entrance into the pore. Based on the analysis, a gate regulation is proposed with the objective of achieving a high DNA capture rate while maintaining a low error rate.

  11. Flux-gate magnetometer for Mars exploration

    Science.gov (United States)

    Zhao, Hua; Zhu, G. W.; Yu, P.; Wang, J. D.; Yu, M. F.; Li, L.; Sun, Y. Q.; Chen, S. W.; Liao, H. Z.; Zhou, B.; Feng, Y. Y.

    2008-10-01

    A micro-satellite, Yinghuo-1, would be launched with Russian spacecraft, Phobos-Grunt in October, 2009 to investigate the space environment around Mars. YH-1 and Phobos-Grunt forms a two-point measurement configuration in the Martian space environment. YH-1 and Phobos-Grunt are equipped with similar magnetic field and plasma detecting payload on two spacecraft would give some coordinated exploration around Mars. YH-1 would orbit Mars with periapsis of 800 km above the Martian surface, and apoapsis about 80000km to the center of Mars. The orbit inclination is in the range of 0~7° to the Martian equator. A flux-gate type magnetometer, with two tri-axial sensors, is developed for YH-1 spacecraft. Two sensors are mounted on one-side of the deployable solar panel with a radial separation about 45cm to function as a gradiometer to minimize the affects of platform remanence. The dynamic range of the magnetometer is +/-256nT with a 16-bit ADC converter, and the noise level is better than 0.01nT/√Hz, to measure three-component magnetic field from DC to 10Hz. Flux-gate magnetometer would work together with the Plasma Package onboard of YH-1 to investigate the Martian bow shock, magnetosheath, magnetic pileup region (MPR). A detail description of the flux-gate magnetometer is presented in this paper, with test and calibration results.

  12. Engineering integrated photonics for heralded quantum gates

    Science.gov (United States)

    Meany, Thomas; Biggerstaff, Devon N.; Broome, Matthew A.; Fedrizzi, Alessandro; Delanty, Michael; Steel, M. J.; Gilchrist, Alexei; Marshall, Graham D.; White, Andrew G.; Withford, Michael J.

    2016-01-01

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process. PMID:27282928

  13. Gate-Tunable Conducting Oxide Metasurfaces.

    Science.gov (United States)

    Huang, Yao-Wei; Lee, Ho Wai Howard; Sokhoyan, Ruzan; Pala, Ragip A; Thyagarajan, Krishnan; Han, Seunghoon; Tsai, Din Ping; Atwater, Harry A

    2016-09-14

    Metasurfaces composed of planar arrays of subwavelength artificial structures show promise for extraordinary light manipulation. They have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces, and orbital angular momentum manipulation and detection over a broad range of the electromagnetic spectrum. However, the optical properties of metasurfaces developed to date do not allow for versatile tunability of reflected or transmitted wave amplitude and phase after their fabrication, thus limiting their use in a wide range of applications. Here, we experimentally demonstrate a gate-tunable metasurface that enables dynamic electrical control of the phase and amplitude of the plane wave reflected from the metasurface. Tunability arises from field-effect modulation of the complex refractive index of conducting oxide layers incorporated into metasurface antenna elements which are configured in reflectarray geometry. We measure a phase shift of 180° and ∼30% change in the reflectance by applying 2.5 V gate bias. Additionally, we demonstrate modulation at frequencies exceeding 10 MHz and electrical switching of ±1 order diffracted beams by electrical control over subgroups of metasurface elements, a basic requirement for electrically tunable beam-steering phased array metasurfaces. In principle, electrically gated phase and amplitude control allows for electrical addressability of individual metasurface elements and opens the path to applications in ultrathin optical components for imaging and sensing technologies, such as reconfigurable beam steering devices, dynamic holograms, tunable ultrathin lenses, nanoprojectors, and nanoscale spatial light modulators.

  14. Engineering integrated photonics for heralded quantum gates.

    Science.gov (United States)

    Meany, Thomas; Biggerstaff, Devon N; Broome, Matthew A; Fedrizzi, Alessandro; Delanty, Michael; Steel, M J; Gilchrist, Alexei; Marshall, Graham D; White, Andrew G; Withford, Michael J

    2016-06-10

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate the design, fabrication and characterisation of the optimal known gate scheme which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show device performance to be less sensitive to phase variations in the circuit than to small deviations in the coupler reflectivity, which are expected given the tolerance values of the fabrication method. The mode fidelity is also shown to be less sensitive to reflectivity and phase errors than the process fidelity. Our best device achieves a fidelity of 0.931 ± 0.001 with the ideal 4 × 4 unitary circuit and a process fidelity of 0.680 ± 0.005 with the ideal computational-basis process.

  15. Hetero-gate-Dielectric Symmetric U-shaped gate tunnel FET

    Science.gov (United States)

    Tajally, Mohammad Bagher; Karami, Mohammad Azim

    2017-10-01

    Heterogeneous gate dielectric is used in a nanoscale symmetric U-shaped gate tunnel FET (SUTFET), which resulted in ION, IOFF, subthreshold swing (SS), and Iambipolar enhancement. ION of 1.5 × 10-5 A/μm, IOFF of 6 × 10-12 A/μm, average subthreshold swing of (SS) 19.83 mV/decade from 0 V high-k dielectric close to the source and low-k dielectric in the vicinity of drain. The gate dielectric engineering shows characteristic enhancement in compare to SUTFET with single gate dielectric material. The strong coupling between the gate and transistor channel near the source results in reduced potential barrier width in tunnel junction, which leads to higher ION and lower subthreshold swing. Moreover, the presence of low-k dielectric near the drain reduces ambipolar current by increasing potential barrier height. This improved SUTFET characteristics makes it suitable for the usage in digital circuits due to reduced ambipolar response.

  16. Probing Dense Sprays with Gated, Picosecond, Digital Particle Field Holography

    Directory of Open Access Journals (Sweden)

    James Trolinger

    2011-12-01

    Full Text Available This paper describes work that demonstrated the feasibility of producing a gated digital holography system that is capable of producing high-resolution images of three-dimensional particle and structure details deep within dense particle fields of a spray. We developed a gated picosecond digital holocamera, using optical Kerr cell gating, to demonstrate features of gated digital holography that make it an exceptional candidate for this application. The Kerr cell gate shuttered the camera after the initial burst of ballistic and snake photons had been recorded, suppressing longer path, multiple scattered illumination. By starting with a CW laser without gating and then incorporating a picosecond laser and an optical Kerr gate, we were able to assess the imaging quality of the gated holograms, and determine improvement gained by gating. We produced high quality images of 50–200 μm diameter particles, hairs and USAF resolution charts from digital holograms recorded through turbid media where more than 98% of the light was scattered from the field. The system can gate pulses as short as 3 mm in pathlength (10 ps, enabling image-improving features of the system. The experiments lead us to the conclusion that this method has an excellent capability as a diagnostics tool in dense spray combustion research.

  17. SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

    Energy Technology Data Exchange (ETDEWEB)

    Xie, X; Cao, D; Housley, D; Mehta, V; Shepard, D [Swedish Cancer Institute, Seattle, WA (United States)

    2014-06-01

    Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-moving platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.

  18. Multiobjective Gate Assignment Based on Passenger Walking Distance and Fairness

    Directory of Open Access Journals (Sweden)

    Yu Jiang

    2013-01-01

    Full Text Available Passenger walking distance is an important index of the airport service quality. How to shorten the walking distance and balance the airlines' service quality is the focus of much research on airport gate assignment problems. According to the problems of airport passenger service quality, an optimization gate assignment model is established. The gate assignment model is based on minimizing the total walking distance of all passengers and balancing the average walking distance of passengers among different airlines. Lingo is used in the simulation of a large airport gate assignment. Test results show that the optimization model can reduce the average walking distance of passenger effectively, improve the number of flights assigned to gate, balance airline service quality, and enhance the overall service level of airports and airlines. The model provides reference for the airport gate preassignment.

  19. Investigation of the stability of melt flow in gating systems

    DEFF Research Database (Denmark)

    Tiedje, Niels Skat; Larsen, Per

    2011-01-01

    of the gating system causes pressure waves to form that eventually lead to defective castings. It is clear that sharp corners and dead ends in gating systems should be avoided, and that more stream lined, organic designs based on fluid dynamic principles will are necessary to design gating systems......Melt flow in four different gating systems designed for production of brake discs was analysed experimentally and by numerical modelling. In the experiments moulds were fitted with glass fronts and melt flow was recorded on video. The video recordings were compared with modelling of melt flow...... in the gating systems. Particular emphasis was on analysing local pressure and formation of pressure waves in the gating system. It was possible to compare melt flow patterns in experiments directly to modelled flow patterns. Generally there was good agreement between flow patterns and filling times. However...

  20. Gate oxide punching thru mechanism in plasma dry etching

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that what caused the punching thru was not only the selectivity of poly-silicon/oxide but also the pattern topography. We used the basic SRAM pattern to check this topography effect, and found that gate oxide located at the narrow spacing of two parallel serpentine lines was the most easily punched thru. What caused the topography effect was the starvation of oxygen in these places which were induced by the residue of poly-silicon and enhanced by electron shading effect. So, to solve the issue of gate oxide punching thru, firstly the selectivity should be enough, secondly we should pay attention to the etching pattern topography.

  1. Rydberg-interaction-based quantum gates free from blockade error

    CERN Document Server

    Shi, Xiao-Feng

    2016-01-01

    Accurate quantum gates are basic elements for building quantum computers. There has been great interest in designing quantum gates by using blockade effect of Rydberg atoms recently. The fidelity and operation speed of these gates, however, are fundamentally limited by the blockade error. Here we propose another type of quantum gates, which are based on Rydberg blockade effect, yet free from any blockade error. In contrast to the `blocking' method in previous schemes, we use Rydberg energy shift to realise a rational generalised Rabi frequency so that a novel $\\pi$ phase for one input state of the gate emerges. This leads to an accurate Rydberg-blockade based two-qubit quantum gate that can operate in a $0.1\\mu s$ timescale or faster thanks to that it operates by a Rabi frequency which is comparable to the blockade shift.

  2. Measurement Saves CNOT Gates in Optimal 2-Qubit Circuits

    CERN Document Server

    Shende, V V; Shende, Vivek V.; Markov, Igor L.

    2005-01-01

    It has been shown in recent papers that any 2-qubit unitary operator can be realized, up to global phase, by a quantum circuit with at most three CNOT gates. Three CNOT gates are also necessary for many operators. However, these results do not fully account for the effect of measurement. Intuitively, the fact that information is lost during measurement should allow some flexibility during circuit synthesis. In our present work, we formalize this in the case of two-qubit operators followed by projective measurements with respect to the computational basis. We show that, in this context, two CNOT gates and six one-qubit gates suffice to simulate an arbitrary two-qubit operator. We also show that for several types of measurement, two CNOT gates are also necessary. In one case, we show that one CNOT gate is necessary and sufficient.

  3. Electric nonadiabatic geometric entangling gates on spin qubits

    Science.gov (United States)

    Azimi Mousolou, Vahid

    2017-07-01

    Producing and maintaining entanglement reside at the heart of the optimal construction of quantum operations and are fundamental issues in the realization of universal quantum computation. We here introduce a setup of spin qubits that allows the geometric implementation of entangling gates between the register qubits with any arbitrary entangling power. We show this by demonstrating a circuit through a spin chain, which performs universal nonadiabatic holonomic two-qubit entanglers. The proposed gates are all electric and geometric, which would help to realize fast and robust entangling gates on spin qubits. This family of entangling gates contains gates that are as efficient as the cnot gate in quantum algorithms. We examine the robustness of the circuit to some extent.

  4. Efficient measurement of quantum gate error by interleaved randomized benchmarking.

    Science.gov (United States)

    Magesan, Easwar; Gambetta, Jay M; Johnson, B R; Ryan, Colm A; Chow, Jerry M; Merkel, Seth T; da Silva, Marcus P; Keefe, George A; Rothwell, Mary B; Ohki, Thomas A; Ketchen, Mark B; Steffen, M

    2012-08-24

    We describe a scalable experimental protocol for estimating the average error of individual quantum computational gates. This protocol consists of interleaving random Clifford gates between the gate of interest and provides an estimate as well as theoretical bounds for the average error of the gate under test, so long as the average noise variation over all Clifford gates is small. This technique takes into account both state preparation and measurement errors and is scalable in the number of qubits. We apply this protocol to a superconducting qubit system and find a bounded average error of 0.003 [0,0.016] for the single-qubit gates X(π/2) and Y(π/2). These bounded values provide better estimates of the average error than those extracted via quantum process tomography.

  5. Dynamic Power Reduction of Digital Circuits by ClockGating

    Directory of Open Access Journals (Sweden)

    Varsha Dewre

    2017-04-01

    Full Text Available In this paper we have presented clock gating process for low power VLSI (very large scale integration circuit design. Clock gating is one of the most quite often used systems in RTL to shrink dynamic power consumption without affecting the performance of the design. One process involves inserting gating requisites in the RTL, which the synthesis tool translates to clock gating cells in the clock-path of a register bank. This helps to diminish the switching activity on the clock network, thereby decreasing dynamic power consumption within the design. Due to the fact the translation accomplished via the synthesis tool is solely combinational; it is referred to as combinational clock gating. This transformation does not alter the behavior of the register being gated

  6. Elementary Quantum Gates Based on Intrinsic Interaction Hamiltonian

    Institute of Scientific and Technical Information of China (English)

    CHEN Jing; YU Chang-Shui; SONG He-Shan

    2006-01-01

    A kind of new operators, the generalized pseudo-spin operators are introduced and a universal intrinsic Hamiltonian of two-qubit interaction is studied in terms of the generalized pseudo-spin operators. A fundamental quantum gate U(θ) is constructed based on the universal Hamiltonian and shown that the roles of the new quantum gate U(θ) is equivalent, functionally, to the joint operation of Hadamard and C-Not gates.

  7. Biophysics, Pathophysiology and Pharmacology of Ion Channel Gating Pores

    Directory of Open Access Journals (Sweden)

    Adrien eMoreau

    2014-04-01

    Full Text Available Voltage sensor domain (VSDs are a feature of voltage gated ion channel (VGICs and voltage sensitive proteins. They are composed of four transmembrane (TM segments (S1 to S4. Currents leaking through VSDs are called omega or gating pore currents.Gating pores are caused by mutations of the highly conserved positively charged amino acids in the S4 segment that disrupt interactions between the S4 segment and the gating charge transfer center (GCTC. The GCTC separates the intracellular and extracellular water crevices. The disruption of S4–GCTC interactions allows these crevices to communicate and create a fast activating and non-inactivating alternative cation-selective permeation pathway of low conductance, or a gating pore.Gating pore currents have recently been shown to cause periodic paralysis phenotypes. There is also increasing evidence that gating pores are linked to several other familial diseases. For example, gating pores in Nav1.5 and Kv7.2 channels may underlie mixed arrhythmias associated with dilated cardiomyopathy (DCM phenotypes and peripheral nerve hyperexcitability (PNH respectively. There is little evidence for the existence of gating pore blockers. Moreover, it is known that a number of toxins bind to the VSD of a specific domain of Na+ channels. These toxins may thus modulate gating pore currents. This focus on the VSD motif opens up a new area of research centered on developing molecules to treat a number of cell excitability disorders such as epilepsy, cardiac arrhythmias, and pain.The purpose of the present review is to summarize existing knowledge of the pathophysiology, biophysics, and pharmacology of gating pore currents and to serve as a guide for future studies aimed at improving our understanding of gating pores and their pathophysiological roles.

  8. Experimental Demonstration of a Quantum Circuit using Linear Optics Gates

    CERN Document Server

    Pittman, T B; Franson, J D

    2004-01-01

    Probabilistic quantum logic gates can be constructed using linear optical elements, ancilla photons, and post-selection based on the results of measurements. Here we describe an experimental demonstration of a simple quantum circuit that combines two exclusive-OR (XOR) logic gates of that kind. Although circuits using XOR gates are not reversible, they may still be useful in a variety of applications such as generating non-classical states of light.

  9. Gates controlled parallel-coupled bilayer graphene double quantum dot

    CERN Document Server

    Wang, Lin-Jun; Wei, Da; Cao, Gang; Tu, Tao; Xiao, Ming; Guo, Guang-Can; Chang, A M

    2011-01-01

    Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled bilayer graphene double quantum dot. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

  10. Engineering Customized TALENs Using the Platinum Gate TALEN Kit.

    Science.gov (United States)

    Sakuma, Tetsushi; Yamamoto, Takashi

    2016-01-01

    Among various strategies for constructing customized transcription activator-like effector nucleases (TALENs), the Golden Gate assembly is the most widely used and most characterized method. The principle of Golden Gate assembly involves cycling reactions of digestion and ligation of multiple plasmids in a single tube, resulting in PCR-, fragmentation-, and purification-free concatemerization of DNA-binding repeats. Here, we describe the protocols for Golden Gate assembly-based TALEN construction using the Platinum Gate TALEN Kit, which allows generation of highly active Platinum TALENs.

  11. Gating-by-Tilt of Mechanically Sensitive Membrane Channels

    Science.gov (United States)

    Turner, Matthew S.; Sens, Pierre

    2004-09-01

    We propose an alternative mechanism for the gating of biological membrane channels in response to membrane tension that involves a change in the slope of the membrane near the channel. Under biological membrane tensions we show that the energy difference between the closed (tilted) and open (untilted) states can far exceed kBT and is comparable to what is available under simple dilational gating. Recent experiments demonstrate that membrane leaflet asymmetries (spontaneous curvature) can strongly affect the gating of some channels. Such a phenomenon would be easier to explain under gating-by-tilt, given its novel intrinsic sensitivity to such asymmetry.

  12. Speed control system for an access gate

    Science.gov (United States)

    Bzorgi, Fariborz M.

    2012-03-20

    An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

  13. Robust paths to realize nonadiabatic holonomic gates

    Science.gov (United States)

    Xu, G. F.; Zhao, P. Z.; Tong, D. M.; Sjöqvist, Erik

    2017-05-01

    To realize one desired nonadiabatic holonomic gate, various equivalent evolution paths can be chosen. However, in the presence of errors, these paths become inequivalent. In this paper we investigate the difference of these evolution paths in the presence of systematic Rabi-frequency errors and aim to find paths with optimal robustness to realize one-qubit nonadiabatic holonomic gates. We focus on three types of evolution paths in the Λ system: paths belonging to the original two-loop scheme [E. Sjöqvist et al., New J. Phys. 14, 103035 (2012), 10.1088/1367-2630/14/10/103035], the single-loop multiple-pulse scheme [E. Herterich and E. Sjöqvist, Phys. Rev. A 94, 052310 (2016), 10.1103/PhysRevA.94.052310], and the off-resonance single-shot scheme [G. F. Xu et al., Phys. Rev. Lett. 92, 052302 (2015), 10.1103/PhysRevLett.92.052302; E. Sjöqvist, Phys. Lett. A 380, 65 (2016), 10.1016/j.physleta.2015.10.006]. Whereas both the single-loop multiple-pulse and single-shot schemes aim to improve the robustness of the original two-loop scheme by shortening the exposure to decoherence, we find here that the two-loop scheme is more robust to systematic errors in the Rabi frequencies. More importantly, we derive conditions under which the resilience to this kind of error can be optimized, thereby strengthening the robustness of nonadiabatic holonomic gates.

  14. Tip-modulation scanned gate microscopy.

    Science.gov (United States)

    Wilson, Neil R; Cobden, David H

    2008-08-01

    We introduce a technique that improves the sensitivity and resolution and eliminates the nonlocal background of scanned gate microscopy (SGM). In conventional SGM, a voltage bias is applied to the atomic force microscope tip and the sample conductance is measured as the tip is scanned. In the new technique, which we call tip-modulation SGM (tmSGM), the biased tip is oscillated and the induced oscillation of the sample conductance is measured. Applied to single-walled carbon nanotube network devices, tmSGM gives sharp, low-noise and background-free images.

  15. Universal programmable logic gate and routing method

    Science.gov (United States)

    Fijany, Amir (Inventor); Vatan, Farrokh (Inventor); Akarvardar, Kerem (Inventor); Blalock, Benjamin (Inventor); Chen, Suheng (Inventor); Cristoloveanu, Sorin (Inventor); Kolawa, Elzbieta (Inventor); Mojarradi, Mohammad M. (Inventor); Toomarian, Nikzad (Inventor)

    2009-01-01

    An universal and programmable logic gate based on G.sup.4-FET technology is disclosed, leading to the design of more efficient logic circuits. A new full adder design based on the G.sup.4-FET is also presented. The G.sup.4-FET can also function as a unique router device offering coplanar crossing of signal paths that are isolated and perpendicular to one another. This has the potential of overcoming major limitations in VLSI design where complex interconnection schemes have become increasingly problematic.

  16. Temporary new opening hours for Gate C

    CERN Document Server

    GS Department

    2010-01-01

    Please note the new temporary opening hours for the gate C as from 22 September 2010 until 29 October 2010 (working days): Morning: between 7:00 a.m. and 9:00 a.m. Lunch: between 12:00 and 2:00 p.m. Evening: between 5:00 pm and 7:00 p.m. Traffic flow will be permitted in both directions during this period. Please minimize your speed accordingly and respect all road signs. GS-SEM Group General Infrastructure Services Department

  17. Electrostatic gating in carbon nanotube aptasensors

    Science.gov (United States)

    Zheng, Han Yue; Alsager, Omar A.; Zhu, Bicheng; Travas-Sejdic, Jadranka; Hodgkiss, Justin M.; Plank, Natalie O. V.

    2016-07-01

    Synthetic DNA aptamer receptors could boost the prospects of carbon nanotube (CNT)-based electronic biosensors if signal transduction can be understood and engineered. Here, we report CNT aptasensors for potassium ions that clearly demonstrate aptamer-induced electrostatic gating of electronic conduction. The CNT network devices were fabricated on flexible substrates via a facile solution processing route and non-covalently functionalised with potassium binding aptamers. Monotonic increases in CNT conduction were observed in response to increasing potassium ion concentration, with a level of detection as low as 10 picomolar. The signal was shown to arise from a specific aptamer-target interaction that stabilises a G-quadruplex structure, bringing high negative charge density near the CNT channel. Electrostatic gating is established via the specificity and the sign of the current response, and by observing its suppression when higher ionic strength decreases the Debye length at the CNT-water interface. Sensitivity towards potassium and selectivity against other ions is demonstrated in both resistive mode and real time transistor mode measurements. The effective device architecture presented, along with the identification of clear response signatures, should inform the development of new electronic biosensors using the growing library of aptamer receptors.Synthetic DNA aptamer receptors could boost the prospects of carbon nanotube (CNT)-based electronic biosensors if signal transduction can be understood and engineered. Here, we report CNT aptasensors for potassium ions that clearly demonstrate aptamer-induced electrostatic gating of electronic conduction. The CNT network devices were fabricated on flexible substrates via a facile solution processing route and non-covalently functionalised with potassium binding aptamers. Monotonic increases in CNT conduction were observed in response to increasing potassium ion concentration, with a level of detection as low as 10

  18. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  19. Round Gating for Low Energy Block Ciphers

    DEFF Research Database (Denmark)

    Banik, Subhadeep; Bogdanov, Andrey; Regazzoni, Francesco;

    2016-01-01

    Pushed by the pervasive diffusion of devices operated by battery or by the energy harvested, energy has become one of the most important parameter to be optimized for embedded systems. Particularly relevant would be to optimize the energy consumption of security primitives. In this paper we explore...... design techniques for implementing block ciphers in a low energy fashion. We concentrate on round based implementation and we discuss how gating, applied at round level can affect and improve the energy consumption of the most common lightweight block cipher currently used in the internet of things...

  20. Sensory gating and sensorimotor gating in medication-free obsessive-compulsive disorder patients

    DEFF Research Database (Denmark)

    de Leeuw, Aart S; Oranje, Bob; van Megen, Harold J G M

    2010-01-01

    Obsessive-compulsive disorder (OCD) is associated with deficits in inhibition mechanisms. This is reflected in reports showing impaired sensorimotor and sensory gating in OCD patients, as measured with prepulse inhibition (PPI) of the startle reflex and P50 suppression paradigms. However, most...

  1. Flufenamic acid decreases neuronal excitability through modulation of voltage-gated sodium channel gating.

    Science.gov (United States)

    Yau, Hau-Jie; Baranauskas, Gytis; Martina, Marco

    2010-10-15

    The electrophysiological phenotype of individual neurons critically depends on the biophysical properties of the voltage-gated channels they express. Differences in sodium channel gating are instrumental in determining the different firing phenotypes of pyramidal cells and interneurons; moreover, sodium channel modulation represents an important mechanism of action for many widely used CNS drugs. Flufenamic acid (FFA) is a non-steroidal anti-inflammatory drug that has been long used as a blocker of calcium-dependent cationic conductances. Here we show that FFA inhibits voltage-gated sodium currents in hippocampal pyramidal neurons; this effect is dose-dependent with IC(50) = 189 μm. We used whole-cell and nucleated patch recordings to investigate the mechanisms of FFA modulation of TTX-sensitive voltage-gated sodium current. Our data show that flufenamic acid slows down the inactivation process of the sodium current, while shifting the inactivation curve ~10 mV toward more hyperpolarized potentials. The recovery from inactivation is also affected in a voltage-dependent way, resulting in slower recovery at hyperpolarized potentials. Recordings from acute slices demonstrate that FFA reduces repetitive- and abolishes burst-firing in CA1 pyramidal neurons. A computational model based on our data was employed to better understand the mechanisms of FFA action. Simulation data support the idea that FFA acts via a novel mechanism by reducing the voltage dependence of the sodium channel fast inactivation rates. These effects of FFA suggest that it may be an effective anti-epileptic drug.

  2. Sensory gating and sensorimotor gating in medication-free obsessive-compulsive disorder patients

    DEFF Research Database (Denmark)

    de Leeuw, Aart S; Oranje, Bob; van Megen, Harold J G M

    2010-01-01

    Obsessive-compulsive disorder (OCD) is associated with deficits in inhibition mechanisms. This is reflected in reports showing impaired sensorimotor and sensory gating in OCD patients, as measured with prepulse inhibition (PPI) of the startle reflex and P50 suppression paradigms. However, most...

  3. Hydrophobic plug functions as a gate in voltage-gated proton channels.

    Science.gov (United States)

    Chamberlin, Adam; Qiu, Feng; Rebolledo, Santiago; Wang, Yibo; Noskov, Sergei Y; Larsson, H Peter

    2014-01-14

    Voltage-gated proton (Hv1) channels play important roles in the respiratory burst, in pH regulation, in spermatozoa, in apoptosis, and in cancer metastasis. Unlike other voltage-gated cation channels, the Hv1 channel lacks a centrally located pore formed by the assembly of subunits. Instead, the proton permeation pathway in the Hv1 channel is within the voltage-sensing domain of each subunit. The gating mechanism of this pathway is still unclear. Mutagenic and fluorescence studies suggest that the fourth transmembrane (TM) segment (S4) functions as a voltage sensor and that there is an outward movement of S4 during channel activation. Using thermodynamic mutant cycle analysis, we find that the conserved positively charged residues in S4 are stabilized by countercharges in the other TM segments both in the closed and open states. We constructed models of both the closed and open states of Hv1 channels that are consistent with the mutant cycle analysis. These structural models suggest that electrostatic interactions between TM segments in the closed state pull hydrophobic residues together to form a hydrophobic plug in the center of the voltage-sensing domain. Outward S4 movement during channel activation induces conformational changes that remove this hydrophobic plug and instead insert protonatable residues in the center of the channel that, together with water molecules, can form a hydrogen bond chain across the channel for proton permeation. This suggests that salt bridge networks and the hydrophobic plug function as the gate in Hv1 channels and that outward movement of S4 leads to the opening of this gate.

  4. Plasmonic response of partially gated field effect transistors

    Science.gov (United States)

    Rudin, S.; Rupper, G.; Reed, M. L.; Shur, M.

    2016-09-01

    Electron density oscillations in the transistor channels - plasma waves in the two-dimensional electron gas - determine the high frequency device response. Plasmonic field effect transistors have emerged as very sensitive, tunable, and extremely fast detectors of THz radiation. They have been implemented using silicon (CMOS), AlGaAs/InGaAs HEMTs, and AlGaAs/InGaAs HEMTs, with the HEMTs shown to operate more efficiently at higher THz frequencies. These HEMTs have both gated and ungated sections of the device channel between the source and drain, and the photovoltaic regime of operation requires an asymmetric gate placement in the device channel. The interactions of the plasma waves in the gated and ungated channel regions strongly affect the overall response and have been investigated in numerous publications. This work addresses a new aspect of such interaction - the effect of the relative position of the gated and ungated section. We show this previously unexplored effect plays a dominant role in determining the response. The results of the numerical simulation based on the solution of the complete system of the hydrodynamic equations describing the electron fluid in the device channel show that the inverse response frequency could be approximated by the sum of the gated plasmon transit time in the gated section of the device, the ungated plasmon transit time in the ungated section of the device between the gate and the drain, and the RC gate-to-source constant. Here R and C are the resistance and capacitance of the gate to source section. Hence, the highest speed is achieved when the gate is as close to the source as possible. This suggests a novel plasmonic detector design, where the gate and source electrode overlap, which is shown to have a superior frequency response for the same distance between the source and the drain.

  5. Modeling gated neutron images of THD capsules

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

    2010-01-01

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  6. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  7. Universal quantum gates for Single Cooper Pair Box based quantum computing

    Science.gov (United States)

    Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

    2000-01-01

    We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

  8. Oracle GoldenGate 12c implementer's guide

    CERN Document Server

    Jeffries, John P

    2015-01-01

    The book is aimed at Oracle database administrators, project managers, and solution architects who wish to extend their knowledge of GoldenGate. The reader is assumed to be familiar with Oracle databases. No knowledge of GoldenGate is required.

  9. Feedback Gating Control for Network Based on Macroscopic Fundamental Diagram

    Directory of Open Access Journals (Sweden)

    YangBeibei Ji

    2016-01-01

    Full Text Available Empirical data from Yokohama, Japan, showed that a macroscopic fundamental diagram (MFD of urban traffic provides for different network regions a unimodal low-scatter relationship between network vehicle density and network space-mean flow. This provides new tools for network congestion control. Based on MFD, this paper proposed a feedback gating control policy which can be used to mitigate network congestion by adjusting signal timings of gating intersections. The objective of the feedback gating control model is to maximize the outflow and distribute the allowed inflows properly according to external demand and capacity of each gating intersection. An example network is used to test the performance of proposed feedback gating control model. Two types of background signalization types for the intersections within the test network, fixed-time and actuated control, are considered. The results of extensive simulation validate that the proposed feedback gating control model can get a Pareto improvement since the performance of both gating intersections and the whole network can be improved significantly especially under heavy demand situations. The inflows and outflows can be improved to a higher level, and the delay and queue length at all gating intersections are decreased dramatically.

  10. The role of image guidance in respiratory gated radiotherapy

    DEFF Research Database (Denmark)

    Korreman, Stine Sofia; Juhler-Nøttrup, Trine; Fredberg Persson, Gitte

    2008-01-01

    Respiratory gating for radiotherapy beam delivery is a widely available technique, manufactured and sold by most of the major radiotherapy machine vendors. Respiratory gated beam delivery is intended to limit the irradiation of tumours moving with respiration to selected parts of the respiratory ...

  11. Self-detecting gate-tunable nanotube paddle resonators

    NARCIS (Netherlands)

    Witkamp, B.; Poot, M.; Pathangi, H.; Hüttel, A.K.; Van der Zant, H.S.J.

    2008-01-01

    We have fabricated suspended metal paddle resonators with carbon nanotubes functioning as self-detecting torsional springs. We observe gate-tunable resonances that either tune to higher or to lower frequencies when increasing the dc voltage on the back gate. We attribute the former modes to flexural

  12. Bill and Melinda Gates Pledge $1-Billion for Minority Scholarships.

    Science.gov (United States)

    Monaghan, Peter; Lederman, Douglas; van der Werf, Martin; Pulley, John

    1999-01-01

    Reports on a $1 billion dollar grant from Bill and Melinda Gates to send 20,000 low-income minority students to college. The Gates Millenium Scholars Program will require students to demonstrate financial need and maintain a 3.0 grade point average in college. A list of the largest private gifts to higher education since 1967 is also provided. (DB)

  13. A self-aligned gate definition process with submicron gaps

    OpenAIRE

    Warmerdam, L.F.P.; Aarnink, A.A.I.; Holleman, J.; Wallinga, H.

    1989-01-01

    A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are fabricated. Minority carrier life-time and breakdown voltage are not affected.

  14. Non-adiabatic geometrical quantum gates in semiconductor quantum dots

    CERN Document Server

    Solinas, P; Zanghì, N; Rossi, F; Solinas, Paolo; Zanardi, Paolo; Zanghì, Nino; Rossi, Fausto

    2003-01-01

    In this paper we study the implementation of non-adiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding/manipulation schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be in principle implemented

  15. Development of a DNA sensor using molecular logic gate

    CERN Document Server

    Bhattacharjee, D; Chakraborty, S; Hussain, Syed Arshad

    2014-01-01

    This communication reports the increase in fluorescence resonance energy transfer (FRET) efficiency between two laser dyes in presence of Deoxyribonucleic acid (DNA). Two types of molecular logic gates have been designed where DNA acts as input signal and fluorescence intensity of different bands are taken as output signal. Use of these logic gates as DNA sensor has been demonstrated

  16. Factory Gate Pricing : An Analysis of the Dutch Retail Distribution

    NARCIS (Netherlands)

    Le Blanc, H.M.; Cruijssen, F.C.A.M.; Fleuren, H.A.; de Koster, M.B.M.

    2004-01-01

    Factory Gate Pricing (FGP) is a relatively new phenomenon in retail distribution.Under FGP, products are no longer delivered at the retailer distribution center, but collected by the retailer at the factory gates of the suppliers.Owing to both the asymmetry in the distribution networks (the supplier

  17. Factory Gate Pricing: An Analysis of the Dutch Retail Distribution

    NARCIS (Netherlands)

    H.M. le Blanc; F. Cruijssen (Frans); H.A. Fleuren; M.B.M. de Koster (René)

    2004-01-01

    textabstractFactory Gate Pricing (FGP) is a relatively new phenomenon in retail distribution. Under FGP, products are no longer delivered at the retailer distribution center, but collected by the retailer at the factory gates of the suppliers. Owing to both the asymmetry in the distribution networks

  18. Gate controlled high efficiency ballistic energy conversion system

    NARCIS (Netherlands)

    Xie, Yanbo; Bos, Diederik; de Boer, Hans L.; van den Berg, Albert; Eijkel, Jan C.T.; Zengerle, R.

    2013-01-01

    Last year we demonstrated the microjet ballistic energy conversion system[1]. Here we show that the efficiency of such a system can be further improved by gate control. With gate control the electrical current generation is enhanced a hundred times with respect to the current generated from the zeta

  19. A New Design Technique of Reversible BCD Adder Based on NMOS with Pass Transistor Gates

    Directory of Open Access Journals (Sweden)

    Md. Sazzad Hossain

    2011-12-01

    Full Text Available In this paper, we have proposed a new design technique of BCD Adder using newly constructed reversible gates are based on NMOS with pass transistor gates, where the conventional reversible gates are based on CMOS with transmission gates. We also compare the proposed reversible gates with the conventional CMOS reversible gates which show that the required number of Transistors is significantly reduced.

  20. Exploration of somatosensory P50 gating in schizophrenia spectrum patients

    DEFF Research Database (Denmark)

    Arnfred, Sidse M.; Chen, Andrew C. N.

    2004-01-01

    Originally, the hypothesis of a sensory gating defect in schizophrenia evolved from studies of somatosensory evoked potentials (SEP), although the idea has primarily been pursued in the auditory modality. Gating is the relative attenuation of amplitude following the second stimulus in a stimulus...... pair. Recently, SEP P50 gating was seen when recording the SEP P50 in a paradigm similar to the one used for auditory P50 gating. Hypothetically, abnormality of somatosensory information processing could be related to anhedonia, which is considered a core feature of schizophrenia. Twelve unmedicated......, but no gating defect. The reduced amplitude was particularly evident in subjects with high scores on the Revised Social Anhedonia Scale. Early somatosensory information processing seems abnormal in schizophrenia spectrum patients. This could be in agreement with the theory of loss of the benefit of regularity...

  1. SEMICONDUCTOR DEVICES: Double gate lateral IGBT on partial membrane

    Science.gov (United States)

    Xiaorong, Luo; Lei, Lei; Wei, Zhang; Bo, Zhang; Zhaoji, Li

    2010-02-01

    A new SOI LIGBT (lateral insulated-gate bipolar transistor) with cathode- and anode-gates on partial membrane is proposed. A low on-state resistance is achieved when a negative voltage is applied to the anode gate. In the blocking state, the cathode gate is shortened to the cathode and the anode gate is shortened to the anode, leading to a fast switching speed. Moreover, the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide, which releases potential lines below the membrane, yielding an enhanced breakdown voltage (BV). Furthermore, a high switching speed is obtained due to the absence of the drain-substrate capacitance. Lastly, a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance. Compared with a conventional LIGBT, the proposed structure exhibits high current capability, low special on-resistance, and double the BV.

  2. Biofouling surveillance at a power station with seawater intake gates

    Energy Technology Data Exchange (ETDEWEB)

    Sasikumar, N.; Nair, K.V.K. [Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    1997-04-01

    Biofouling monitoring of the seawater intake gates of Madras` atomic power station (MAPS) in India was carried out for a period of two years. The settlement and growth rates, composition, and biomass of fouling between the intake filter gates and the test panels exposed in the coastal waters were compared and the results showed significant differences. The major foulant of the tunnel -green mussel, Perna viridis, and barnacle, Megabalanus tintinnabulum - though generally absent on test panels, was present on the intake gates. Relatively-high growth rates with heavy biomass were found at the intake gates as compared to the test panel. The study suggests that the intake gates can be used for a reliable fouling prediction in coastal power plants. (Author).

  3. On modeling the digital gate delay under process variation

    Institute of Scientific and Technical Information of China (English)

    Gao Mingzhi; Ye Zuochang; Wang Yan; Yu Zhiping

    2011-01-01

    To achieve a characterization method for the gate delay library used in block based statistical static timing analysis with neither unacceptably poor accuracy nor forbiddingly high cost,we found that general-purpose gate delay models are useful as intermediaries between the circuit simulation data and the gate delay models in required forms.In this work,two gate delay models for process variation considering different driving and loading conditions are proposed.From the testing results,these two models,especially the one that combines effective dimension reduction (EDR) from statistics society with comprehensive gate delay models,offer good accuracy with low characterization cost,and they are thus competent for use in statistical timing analysis (SSTA).In addition,these two models have their own value in other SSTA techniques.

  4. Switching teraherz waves with gate-controlled active graphene metamaterials

    CERN Document Server

    Lee, Seung Hoon; Kim, Teun-Teun; Lee, Seungwoo; Liu, Ming; Yin, Xiaobo; Choi, Hong Kyw; Lee, Seung S; Choi, Choon-Gi; Choi, Sung-Yool; Zhang, Xiang; Min, Bumki

    2012-01-01

    The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of low-energy photons with massless Dirac fermions, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpatterned graphene alone is still not strong enough for practical optoelectronic applications due to its nonresonant Drude-like behaviour. Here, we experimentally demonstrate that substantial gate-induced persistent switching and linear modulation of terahertz waves can be achieved in a two-dimensional artificial material, referred to as a metamaterial, into which an atomically thin, gated two-dimensional graphene layer is integrated. The gate-controllable light-matter interaction in the graphene layer ...

  5. Gating System Design for a Magnesium Alloy Casting

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The gating system of a cylindrical magnesium casting has been designed by using multiple objective optimization and Taguchi method. Mold filling and solidification processes were simulated by using MAGMASOFT(R).The simulation results indicate that the gating system design has a significant effect on the quality of magnesium castings. In an effort to obtain the optimal design of gating system, the signal-to-noise (S/N) ratio was used to analyze the effect of various gating designs on cavity filling and casting quality by using a weighting method based on the design of an orthogonal array. Four gating system parameters, namely, ingate height,ingate width, runner height, runner width, were optimized with a consideration of multiple objective criteria including filling velocity, shrinkage porosity and product yield.

  6. Possibilities Of Opening Up the Stage-Gate Model

    Directory of Open Access Journals (Sweden)

    Biljana Stošić

    2014-12-01

    Full Text Available The paper presents basic elements of the Stage-Gate and Open innovation models, and possible connection of these two, resulting in what is frequently called an “Open Stage-Gate” model. This connection is based on opening up the new product development process and integration of the open innovation principles with the Stage-Gate concept, facilitating the import and export of information and technologies. Having in mind that the Stage Gate has originally been classified as the third generation model of innovation, the paper is dealing with the capabilities for applying the sixth generation Open innovation principles in today’s improved and much more flexible phases and gates of the Stage Gate. Lots of innovative companies are actually using both models in their NPD practice, looking for the most appropriate means of opening up the well-known closed innovation, especially in the domain of ideation through co-creation.

  7. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-12-20

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  8. Parallel transport quantum logic gates with trapped ions

    CERN Document Server

    de Clercq, Ludwig; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

    2015-01-01

    Quantum information processing will require combinations of gate operations and communication, with each applied in parallel to large numbers of quantum systems. These tasks are often performed sequentially, with gates implemented by pulsed fields and information transported either by moving the physical qubits or using photonic links. For trapped ions, an alternative approach is to implement quantum logic gates by transporting the ions through static laser beams, combining qubit operations with transport. This has significant advantages for scalability since the voltage waveforms required for transport can potentially be generated using micro-electronics integrated into the trap structure itself, while both optical and microwave control elements are significantly more bulky. Using a multi-zone ion trap, we demonstrate transport gates on a qubit encoded in the hyperfine structure of a beryllium ion. We show the ability to perform sequences of operations, and to perform parallel gates on two ions transported t...

  9. Optimizing link efficiency for gated DPCCH transmission on HSUPA

    DEFF Research Database (Denmark)

    Zarco, Carlos Ruben Delgado; Wigard, Jeroen; Kolding, T. E.

    2007-01-01

    To minimize the terminal's transmission power in bursty uplink traffic conditions, the evolved High-Speed Uplink Packet Access (HSUPA) concept in 3GPP WCDMA includes a feature known as Dedicated Physical Control Channel (DPCCH) gating. We present here a detailed link level study of gating from...... a link efficiency (LE) perspective; LE being expressed in bits per second per Watt. While the overall gain mechanisms of gating are well known, we show how special challenges related to discontinuous Enhanced Dedicated Channel (E-DCH) transmission can be addressed for high link and system performance. We...... consider the E-DCH performance degradation caused by gating on other radio procedures relying on the DPCCH, such as inner and outer loop power control. Our studies show that gating is beneficial for both for 2 and 10 ms transmission time intervals. The gains in terms of LE with a Vehicular A 30 kmph...

  10. Modal gating of muscle nicotinic acetylcholine receptors

    Science.gov (United States)

    Vij, Ridhima

    Many ion channels exhibit multiple patterns of kinetic activity in single-channel currents. This behavior is rare in WT mouse muscle nicotinic acetylcholine receptors (AChRs), where A2C↔A2O gating events are well-described by single exponentials. Also, single-channel open probability (PO) is essentially homogeneous at a given agonist concentration in the WT receptors. Here I report that perturbations of almost all the residues in loop C (alpha188-alpha199, at the agonist binding site) generate heterogeneity in PO ('modes'). Such unsettled activity was apparent with an alanine substitution at all positions in loop C (except alphaY190 and alphaY198) and with different side chain substitutions at alphaP197 for both adult- and fetal-type AChRs. I used single channel electrophysiology along with site-directed mutagenesis to study modal gating in AChRs consequent to mutations/deletions in loop C. The multiple patterns of kinetic activity arose from the difference in agonist affinity rather than in intrinsic AChR gating. Out of the four different agonists used to study the modal behavior, acetylcholine (ACh) showed a higher degree of kinetic heterogeneity compared to others. The time constant for switching between modes was long (~mins), suggesting that they arise from alternative, stable protein conformations. By studying AChRs having only 1 functional binding site, I attempted to find the source of the affinity difference, which was traced mainly to the alphadelta agonist site. Affinity at the neurotransmitter binding site is mainly determined by a core of five aromatic residues (alphaY93, alphaW149, alphaY190, alphaY198 and deltaW57). Phenylalanine substitutions at all aromatic residues except alphaY93 resulted in elimination of modes. Modes were also eliminated by alanine mutation at deltaW57 on the complementary side but not at other aromatics. Also, by substituting four gamma subunit residues into the delta subunit on the complementary beta sheet, I found that

  11. Opening of the New Gate E - Final Closure of Gate C - New azur «B» type cern access card

    CERN Multimedia

    Relations with the Host States Service

    2004-01-01

    Gate E ("Charles de Gaulle Gate") to the Meyrin Site will be open, for those entitled to use it, from 1 November 2004. The opening of this Gate should contribute to relieving congestion not only on the Prévessin - RN84 and Meyrin Route border crossings but also at Gates A and B. As a result, Gate C will be closed indefinitely from 1 November 2004. Providing a direct link between the Meyrin Site and the French territory beyond the fenced part of the CERN site, Gate E is the subject of international agreements between CERN, Switzerland and France, on the basis of which the Director-General has issued the "Rules for the Use of Gate E", (document CERN/DSU-RH/12222 of 27 October 2004; see also the latest news in "publications" at http://www.cern.ch/relations/). The main provisions of these Rules are as follows: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.30 a.m. to 9.30 a.m. for access into the site, and from 4.30 p.m. to 6.30 p.m. for passage out of the site. Persons are aut...

  12. Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

    Science.gov (United States)

    Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

    2016-01-01

    Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels. PMID:27677715

  13. Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Hojjatollah Sarvari

    2016-01-01

    Full Text Available Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

  14. Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET

    Institute of Scientific and Technical Information of China (English)

    梅博; 毕津顺; 李多力; 刘思南; 韩郑生

    2012-01-01

    The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress,A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices.This modification is stable and time invariant.In order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS devices,These results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage path.So we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.

  15. Normal mode gating motions of a ligand-gated ion channel persist in a fully hydrated lipid bilayer model.

    Science.gov (United States)

    Bertaccini, Edward J; Trudell, James R; Lindahl, Erik

    2010-08-18

    We have previously used molecular modeling and normal-mode analyses combined with experimental data to visualize a plausible model of a transmembrane ligand-gated ion channel. We also postulated how the gating motion of the channel may be affected by the presence of various ligands, especially anesthetics. As is typical for normal-mode analyses, those studies were performed in vacuo to reduce the computational complexity of the problem. While such calculations constitute an efficient way to model the large scale structural flexibility of transmembrane proteins, they can be criticized for neglecting the effects of an explicit phospholipid bilayer or hydrated environment. Here, we show the successful calculation of normal-mode motions for our model of a glycine α-1 receptor, now suspended in a fully hydrated lipid bilayer. Despite the almost uniform atomic density, the introduction of water and lipid does not grossly distort the overall gating motion. Normal-mode analysis revealed that even a fully immersed glycine α-1 receptor continues to demonstrate an iris-like channel gating motion as a low-frequency, high-amplitude natural harmonic vibration consistent with channel gating. Furthermore, the introduction of periodic boundary conditions allows the examination of simultaneous harmonic vibrations of lipid in synchrony with the protein gating motions that are compatible with reasonable lipid bilayer perturbations. While these perturbations tend to influence the overall protein motion, this work provides continued support for the iris-like motion model that characterizes gating within the family of ligand-gated ion channels.

  16. Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

    Science.gov (United States)

    Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

    2016-09-01

    Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels.

  17. Image Shutters: Gated Proximity-Focused Microchannel-Plate (MCP) Wafer Tubes Versus Gated Silicon Intensified Target (SIT) Vidicons

    Science.gov (United States)

    Yates, G. J.; King, N. S. P.; Jaramillo, S. A.; Ogle, J. W.; Noel, B. W.; Thayer, N. N.

    1983-03-01

    The imaging characteristics of two fast image shutters used for recording the spatial and temporal evolution of transient optical events in the nanosecond range have been studied. Emphasis is on the comparative performances of each shutter type under similar conditions. Response data, including gating speed, gain, dynamic range, shuttering efficiency, and resolution for 18 and 25-mm-diam proximity-focused microchannel-plate (MCP) intensifiers are com-pared with similar data for a prototype electrostatically-focused 25-mm-diam gated silicon-intensified-target (SIT) vidicon currently under development for Los Alamos National Laboratory. Several key parameters critical to optical gating speed have been varied in both tube types in order to determine the optimum performance attainable from each design. These include conductive substrate material and thickness used to reduce photocathode resistivity, spacing between gating electrodes to minimize interelectrode capacitance, the use of con-ductive grids on the photocathode substrate to permit rapid propagation of the electrical gate pulse to all areas of the photocathode, and different package geometries to provide a more effective interface with external biasing and gating circuitry. For comparable spatial resolution, most 18-mm-diam MCPs require gate times > 2.5 ns while the fastest SIT has demonstrated sub-nanosecond optical gates as short as r 400 ± 50 ps for full shuttering of the 25-mm-diam input window.

  18. Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric

    Science.gov (United States)

    Jiang, Chunsheng; Liang, Renrong; Wang, Jing; Xu, Jun

    2016-12-01

    In this work, a kind of negative capacitance double-gate junctionless transistor (NC-DG-JLT) with ferroelectric (FE) gate dielectric and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure is proposed. It is demonstrated that NC-DG-JLTs can lower off-state current, improve on-state drain current, and lower subthreshold swing at the same time compared with its conventional DG JLT counterpart using numerical simulation. The steep subthreshold swing (SS detail. The low off-state current and high on/off current ratio could be obtained even for ultra-small transistors by optimizing the device parameters. NC-DG-JLTs have a great potential for low power dissipation applications.

  19. A circuit QED controlled-Z ``AMP'' gate (Adiabatic MultiPole gate)

    Science.gov (United States)

    McKay, David C.; Naik, Ravi; Bishop, Lev S.; Schuster, David I.

    2014-03-01

    Circuit quantum electrodynamics -- superconducting Josephson junction ``transmon'' qubits coupled via microwave cavities -- is a promising route towards scalable quantum computing. Here we report on experiments coupling two transmon qubits through multiple strongly coupled planar superconducting cavities -- the multipole cavity QED architecture. This design enables large interactions (mediated by real cavity photons) when the transmons are resonant with the cavities, and low off rates when the qubits are tuned away from the cavity resonance. In this talk we will discuss our gate protocol -- the AMP gate -- and report on producing a high fidelity Bell state (| gg > + | ee >) measured from state and process tomography. We will discuss future plans for scaling this architecture beyond two qubits.

  20. Gate stack and channel engineering: Study of metal gates and germanium channel devices

    Science.gov (United States)

    Todi, Ravi M.

    The continued scaling of device dimensions in complementary metal oxide semiconductor (CMOS) technology within the sub-100 nm region requires an alternative high dielectric constant (high-kappa) oxide layer to counter high tunneling leakage currents, a metallic gate electrode to address polysilicon depletion, boron penetration and high polysilicon sheet resistance, and high mobility channel materials to boost the CMOS performance. Metal gates can also offer improved thermal and chemical stability, but their use requires that we improve our understanding of how the metal alloy phase, crystallographic orientation, and composition affect the electronic properties of the metal alloy-oxide interface. To replace n++ and p++ polysilicon gate electrodes and maintain scaled device performance requires metal gate electrodes with work functions within 0.2 eV of the silicon conduction and valence band edges, i.e., 5.0-5.2 and 4.1-4.3 eV, for PMOS and NMOS devices, respectively. In addition to work function and thermal/chemical stability, metal gates must be integrated into the CMOS process flow. It is the aim of this work to significantly expand our knowledge base in alloys for dual metal gates by carrying out detailed electrical and materials studies of the binary alloy systems of Ru with p-type metal Pt. Three n-type metals systems, Ru-Ta, Ru-Hf and Ru-Nb have also been partially investigated. This work also focuses on high mobility Ge p-MOSFETs for improved CMOS performance. DC magnetron sputtering has been used to deposit binary alloy films on thermally grown SiO2. The composition of the alloy films have been determined by Rutherford backscattering spectrometry and the identification of phases present have been made using x-ray and electron diffraction of samples. The microstructure of the phases of interest has been examined in the transmission electron microscope and film texture was characterized via x-ray diffraction. The electrical characterization includes basic

  1. Chemical sensitivity of Mo gate Mos capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lombardi, R.M.; Aragon, R. [Laboratorio de Peliculas delgadas, Facultad de Ingenieria, Paseo Colon 850, 1063, Buenos Aires (Argentina)

    2006-07-01

    Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10{sup 11} cm{sup -2} e-v{sup -1}, in pure nitrogen, to 2.5 x 10{sup 11} cm{sup -2} e-v{sup -1} in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)

  2. Polarization gating based on Mueller matrices.

    Science.gov (United States)

    Lizana, Angel; Van Eeckhout, Albert; Adamczyk, Kamil; Rodríguez, Carla; Escalera, Juan Carlos; Garcia-Caurel, Enric; Moreno, Ignacio; Campos, Juan

    2017-05-01

    We present mathematical formulas generalizing polarization gating (PG) techniques. PG refers to a collection of imaging methods based on the combination of different controlled polarization channels. In particular, we show how using the measured Mueller matrix (MM) of a sample, a widespread number of PG configurations can be evaluated just from analytical expressions based on the MM coefficients. We also show the interest of controlling the helicity of the states of polarization used for PG-based metrology, as this parameter has an impact in the image contrast of samples. In addition, we highlight the interest of combining PG techniques with tools of data analysis related to the MM formalism, such as the well-known MM decompositions. The method discussed in this work is illustrated with the results of polarimetric measurements done on artificial phantoms and real ex-vivo tissues.

  3. Classical Boolean logic gates with quantum systems

    Energy Technology Data Exchange (ETDEWEB)

    Renaud, N; Joachim, C, E-mail: n-renaud@northwestern.edu [Nanoscience Group and MANA Satellite CEMES/CNRS, 29 rue J Marvig, BP 94347, 31055 Toulouse Cedex (France)

    2011-04-15

    An analytical method is proposed to implement any classical Boolean function in a small quantum system by taking the advantage of its electronic transport properties. The logical input, {alpha} = {l_brace}{alpha}{sub 1}, ..., {alpha}{sub N}{r_brace}, is used to control well-identified parameters of the Hamiltonian of the system noted H{sub 0}({alpha}). The logical output is encoded in the tunneling current intensity passing through the quantum system when connected to conducting electrodes. It is demonstrated how to implement the six symmetric two-input/one-output Boolean functions in a quantum system. This system can be switched from one logic function to another by changing its structural parameters. The stability of the logic gates is discussed, perturbing the Hamiltonian with noise sources and studying the effect of decoherence.

  4. Electrostatically gated membrane permeability in inorganic protocells

    Science.gov (United States)

    Li, Mei; Harbron, Rachel L.; Weaver, Jonathan V. M.; Binks, Bernard P.; Mann, Stephen

    2013-06-01

    Although several strategies are now available to produce functional microcompartments analogous to primitive cell-like structures, little progress has been made in generating protocell constructs with self-controlled membrane permeability. Here we describe the preparation of water-dispersible colloidosomes based on silica nanoparticles and delineated by a continuous semipermeable inorganic membrane capable of self-activated, electrostatically gated permeability. We use crosslinking and covalent grafting of a pH-responsive copolymer to generate an ultrathin elastic membrane that exhibits selective release and uptake of small molecules. This behaviour, which depends on the charge of the copolymer coronal layer, serves to trigger enzymatic dephosphorylation reactions specifically within the protocell aqueous interior. This system represents a step towards the design and construction of alternative types of artificial chemical cells and protocell models based on spontaneous processes of inorganic self-organization.

  5. Digital systems from logic gates to processors

    CERN Document Server

    Deschamps, Jean-Pierre; Terés, Lluís

    2017-01-01

    This textbook for a one-semester course in Digital Systems Design describes the basic methods used to develop “traditional” Digital Systems, based on the use of logic gates and flip flops, as well as more advanced techniques that enable the design of very large circuits, based on Hardware Description Languages and Synthesis tools. It was originally designed to accompany a MOOC (Massive Open Online Course) created at the Autonomous University of Barcelona (UAB), currently available on the Coursera platform. Readers will learn what a digital system is and how it can be developed, preparing them for steps toward other technical disciplines, such as Computer Architecture, Robotics, Bionics, Avionics and others. In particular, students will learn to design digital systems of medium complexity, describe digital systems using high level hardware description languages, and understand the operation of computers at their most basic level. All concepts introduced are reinforced by plentiful illustrations, examples, ...

  6. Gate-tunable conducting oxide metasurfaces

    CERN Document Server

    Huang, Yao-Wei; Sokhoyan, Ruzan; Pala, Ragip; Thyagarajan, Krishnan; Han, Seunghoon; Tsai, Din Ping; Atwater, Harry A

    2015-01-01

    Metasurfaces composed of planar arrays of sub-wavelength artificial structures show promise for extraordinary light manipulation; they have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces and orbital angular momentum manipulation and detection over a broad range of electromagnetic spectrum. However the optical properties of metasurfaces developed to date do not allow for versatile tunability of reflected or transmitted wave amplitude and phase after fabrication, thus limiting their use in a wide range of applications. Here, we experimentally demonstrate a gate-tunable metasurface that enables dynamic electrical control of the phase and amplitude of the plane wave reflected from the metasurface. Tunability arises from field-effect modulation of the complex refractive index of conducting oxide layers incorporated into metasurface antenna elements which are configured in a reflectarray geometry. We measure a phase shift of {\\pi} and ~ 30% change in the reflectanc...

  7. Gate-Level Simulation of Quantum Circuits

    CERN Document Server

    Viamontes, G F; Markov, I L; Hayes, J P; Viamontes, George F.; Rajagopalan, Manoj; Markov, Igor L.; Hayes, John P.

    2002-01-01

    While thousands of experimental physicists and chemists are currently trying to build scalable quantum computers, it appears that simulation of quantum computation will be at least as critical as circuit simulation in classical VLSI design. However, since the work of Richard Feynman in the early 1980s little progress was made in practical quantum simulation. Most researchers focused on polynomial-time simulation of restricted types of quantum circuits that fall short of the full power of quantum computation. Simulating quantum computing devices and useful quantum algorithms on classical hardware now requires excessive computational resources, making many important simulation tasks infeasible. In this work we propose a new technique for gate-level simulation of quantum circuits which greatly reduces the difficulty and cost of such simulations. The proposed technique is implemented in a simulation tool called the Quantum Information Decision Diagram (QuIDD) and evaluated by simulating Grover's quantum search al...

  8. Gate-controlled conductance switching in DNA

    Science.gov (United States)

    Xiang, Limin; Palma, Julio L.; Li, Yueqi; Mujica, Vladimiro; Ratner, Mark A.; Tao, Nongjian

    2017-02-01

    Extensive evidence has shown that long-range charge transport can occur along double helical DNA, but active control (switching) of single-DNA conductance with an external field has not yet been demonstrated. Here we demonstrate conductance switching in DNA by replacing a DNA base with a redox group. By applying an electrochemical (EC) gate voltage to the molecule, we switch the redox group between the oxidized and reduced states, leading to reversible switching of the DNA conductance between two discrete levels. We further show that monitoring the individual conductance switching allows the study of redox reaction kinetics and thermodynamics at single molecular level using DNA as a probe. Our theoretical calculations suggest that the switch is due to the change in the energy level alignment of the redox states relative to the Fermi level of the electrodes.

  9. IMPLEMENTATION OF VEDIC MULTIPLIER USING REVERSIBLE GATES

    Directory of Open Access Journals (Sweden)

    P. Koti Lakshmi

    2015-07-01

    Full Text Available With DSP applications evolving continuously, there is continuous need for improved multipliers which are faster and power efficient. Reversible logic is a new and promising field which addresses the problem of power dissipation. It has been shown to consume zero power theoretically. Vedic mathematics techniques have always proven to be fast and efficient for solving various problems. Therefore, in this paper we implement Urdhva Tiryagbhyam algorithm using reversible logic thereby addressing two important issues – speed and power consumption of implementation of multipliers. In this work, the design of 4x4 Vedic multiplier is optimized by reducing the number of logic gates, constant inputs, and garbage outputs. This multiplier can find its application in various fields like convolution, filter applications, cryptography, and communication.

  10. Graphene terahertz modulators by ionic liquid gating

    CERN Document Server

    Wu, Yang; Qiu, Xuepeng; Liu, Jingbo; Deorani, Praveen; Banerjee, Karan; Son, Jaesung; Chen, Yuanfu; Chia, Elbert E M; Yang, Hyunsoo

    2015-01-01

    Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

  11. Gate tuneable beamsplitter in ballistic graphene

    Energy Technology Data Exchange (ETDEWEB)

    Rickhaus, Peter; Makk, Péter, E-mail: Peter.Makk@unibas.ch; Schönenberger, Christian [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Liu, Ming-Hao; Richter, Klaus [Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg (Germany)

    2015-12-21

    We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a semi-transparent mirror in the bipolar regime and that the reflectance and transmittance of the p-n interface can be tuned by the gate voltages. Moreover, by studying the conductance features appearing in magnetic field, we demonstrate that the position of the p-n interface can be moved by 1 μm. The herein presented beamsplitter device can form the basis of electron-optic interferometers in graphene.

  12. Voltage-gated lipid ion channels

    DEFF Research Database (Denmark)

    Blicher, Andreas; Heimburg, Thomas Rainer

    2013-01-01

    Synthetic lipid membranes can display channel-like ion conduction events even in the absence of proteins. We show here that these events are voltage-gated with a quadratic voltage dependence as expected from electrostatic theory of capacitors. To this end, we recorded channel traces and current...... histograms in patch-experiments on lipid membranes. We derived a theoretical current-voltage relationship for pores in lipid membranes that describes the experimental data very well when assuming an asymmetric membrane. We determined the equilibrium constant between closed and open state and the open...... probability as a function of voltage. The voltage-dependence of the lipid pores is found comparable to that of protein channels. Lifetime distributions of open and closed events indicate that the channel open distribution does not follow exponential statistics but rather power law behavior for long open times...

  13. Corticolimbic gating of emotion-driven punishment.

    Science.gov (United States)

    Treadway, Michael T; Buckholtz, Joshua W; Martin, Justin W; Jan, Katharine; Asplund, Christopher L; Ginther, Matthew R; Jones, Owen D; Marois, René

    2014-09-01

    Determining the appropriate punishment for a norm violation requires consideration of both the perpetrator's state of mind (for example, purposeful or blameless) and the strong emotions elicited by the harm caused by their actions. It has been hypothesized that such affective responses serve as a heuristic that determines appropriate punishment. However, an actor's mental state often trumps the effect of emotions, as unintended harms may go unpunished, regardless of their magnitude. Using fMRI, we found that emotionally graphic descriptions of harmful acts amplify punishment severity, boost amygdala activity and strengthen amygdala connectivity with lateral prefrontal regions involved in punishment decision-making. However, this was only observed when the actor's harm was intentional; when harm was unintended, a temporoparietal-medial-prefrontal circuit suppressed amygdala activity and the effect of graphic descriptions on punishment was abolished. These results reveal the brain mechanisms by which evaluation of a transgressor's mental state gates our emotional urges to punish.

  14. Image Filtering with Field Programmable Gate Array

    Directory of Open Access Journals (Sweden)

    Arūnas Šlenderis

    2013-05-01

    Full Text Available The research examined the use of field programmable gate arrays (FPGA in image filtering. Experimental and theoretical researches were reviewed. Experiments with Cyclone III family FPGA chip with implemented NIOS II soft processor were considered. Image filtering was achieved with symmetrical and asymmetrical finite impulse response filters with convolution kernel. The system, which was implemented with 3×3 symmetrical filter, which was implemented using the hardware description language, uses 59% of logic elements of the chip and 10 multiplication elements. The system with asymmetrical filter uses the same amount of logic elements and 13 multiplication elements. Both filter systems consume approx. 545 mW of power. The system, which is designed for filter implementation in C language, uses 65% of all logical elements and consumes 729 mW of power.Article in Lithuanian

  15. Implementation of a two-qubit controlled-rotation gate based on unconventional geometric phase with a constant gating time

    Energy Technology Data Exchange (ETDEWEB)

    Yabu-uti, B.F.C., E-mail: yabuuti@ifi.unicamp.br [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas, 13083-970 Campinas, SP (Brazil); Roversi, J.A., E-mail: roversi@ifi.unicamp.br [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas, 13083-970 Campinas, SP (Brazil)

    2011-08-22

    We propose an alternative scheme to implement a two-qubit controlled-R (rotation) gate in the hybrid atom-CCA (coupled cavities array) system. Our scheme results in a constant gating time and, with an adjustable qubit-bus coupling (atom-resonator), one can specify a particular rotation R on the target qubit. We believe that this proposal may open promising perspectives for networking quantum information processors and implementing distributed and scalable quantum computation. -- Highlights: → We propose an alternative two-qubit controlled-rotation gate implementation. → Our gate is realized in a constant gating time for any rotation. → A particular rotation on the target qubit can be specified by an adjustable qubit-bus coupling. → Our proposal may open promising perspectives for implementing distributed and scalable quantum computation.

  16. Integrin receptors and ligand-gated channels.

    Science.gov (United States)

    Morini, Raffaella; Becchetti, Andrea

    2010-01-01

    Plastic expression of different integrin subunits controls the different stages of neural development, whereas in the adult integrins regulate synaptic stability. Evidence of integrin-channel crosstalk exists for ionotropic glutamate receptors. As is often the case in other tissues, integrin engagement regulates channel activity through complex signaling pathways that often include tyrosine phosphorylation cascades. The specific pathways recruited by integrin activation depend on cerebral region and cell type. In turn, ion channels control integrin expression onto the plasma membrane and their ligand binding affinity. The most extensive studies concern the hippocampus and suggest implications for neuronal circuit plasticity. The physiological relevance of these findings depends on whether adhesion molecules, aside from determining tissue stability, contribute to synaptogenesis and the responsiveness of mature synapses, thus contributing to long-term circuit consolidation. Little evidence is available for other ligand-gated channels, with the exception of nicotinic receptors. These exert a variety of functions in neurons and non neural tissue, both in development and in the adult, by regulating cell cycle, synaptogenesis and synaptic circuit refinement. Detailed studies in epidermal keratinocytes have shed some light on the possible mechanisms through which ACh can regulate cell motility, which may be of general relevance for morphogenetic processes. As to the control of mature synapses, most results concern the integrinic control of nicotinic receptors in the neuromuscular junction. Following this lead, a few studies have addressed similar topics in adult cerebral synapses. However, pursuing and interpreting these results in the brain is especially difficult because of the complexity of the nicotinic roles and the widespread contribution of nonsynaptic, paracrine transmission. From a pathological point of view, considering the well-known contribution of both

  17. Eternal Rome: Guardian of the Heavenly Gates

    Science.gov (United States)

    Latura, G.

    2016-01-01

    The power of the Roman Empire did not come solely by way of brutal force. A spiritual vision inherited from the Greeks inspired the Romans—an ascent through the classical Planets to the intersections with the Milky Way, where stood the gates of heaven. This vision stretches back, through Macrobius and Cicero, to Plato's Republic and Timaeus. The Eternal City, capital of the Empire for four centuries, claimed control over the celestial portals, a tradition that is traced on Roman coins and medals over thousands of years. Julius Caesar borrowed enormous sums to campaign for the office of Pontifex Maximus—high priest of Rome—spending a fortune on “bread and circuses” to secure the support of the masses. Consolidating power at every turn, Caesar as dictator-for-life became absolute master of Rome, the city that, according to its coins, ruled the cosmos. Though his mortal frame fell to the knives of the senators, Caesar's soul was seen ascending to heaven as a comet. Thus was born the myth of Divvs Ivlivs—the divine avatar of the Roman Empire, whose name would become synonymous with the title of emperor over millennia (German Kaiser, Hungarian Csaszar, Russian Tsar, to name a few). Caesar's heir, Octavian, piously waited for Lepidus to die of old age before grabbing the office of Pontifex Maximus for himself, a title that would define the celestial authority of the ruler of Rome until Gratian renounced it four centuries later. Ambrose, bishop of Milan, convinced Gratian that such a pagan title was not fit for a Christian. Once the Roman emperor discarded the title Pontifex Maximus, the bishop of Rome picked it up and placed it above his own head, as can be seen on coins and medals of the Vatican to this day. In Jubilee years, the Pope knocks down the brick wall that has kept closed the Holy Door for a generation, a ceremony that reaffirms Rome's control of the celestial gates.

  18. Calculation of quantum discord for qubit-qudit or N qubits

    CERN Document Server

    vinjanampathy, sai

    2011-01-01

    Quantum discord, a kind of quantum correlation, is defined as the difference between quantum mutual information and classical correlation in a bipartite system. It has been discussed so far for small systems with only a few independent parameters. We extend here to a much broader class of states when the second party is of arbitrary dimension d, so long as the first, measured, party is a qubit. We present two formulae to calculate quantum discord, the first relating to the original entropic definition and the second to a recently proposed geometric distance measure which leads to an analytical formulation. The tracing over the qubit in the entropic calculation is reduced to a very simple prescription. And, when the d-dimensional system is a so-called X state, the density matrix having non-zero elements only along the diagonal and anti-diagonal so as to appear visually like the letter X, the entropic calculation can be carried out analytically. Such states of the full bipartite qubit-qudit system may be named ...

  19. Dynamics and protection of entanglement in n -qubit systems within Markovian and non-Markovian environments

    Science.gov (United States)

    Nourmandipour, A.; Tavassoly, M. K.; Rafiee, M.

    2016-02-01

    We provide an analytical investigation of the pairwise entanglement dynamics for a system, consisting of an arbitrary number of qubits dissipating into a common and non-Markovian environment for both weak- and strong-coupling regimes. In the latter case, a revival of pairwise entanglement due to the memory depth of the environment is observed. The leakage of photons into a continuum state is assumed to be the source of dissipation. We show that for an initially Werner state, the environment washes out the pairwise entanglement, but a series of nonselective measurements can protect the relevant entanglement. On the other hand, by limiting the number of qubits initially in the superposition of single excitation, a stationary entanglement can be created between qubits initially in the excited and ground states. Finally, we determine the stationary distribution of the entanglement versus the total number of qubits in the system.

  20. Voltage-Gated Channels as Causative Agents for Epilepsies

    Directory of Open Access Journals (Sweden)

    Mutasem Abuhamed

    2008-01-01

    Full Text Available Problem statement: Epilepsy is a common neurological disorder that afflicts 1-2% of the general population worldwide. It encompasses a variety of disorders with seizures. Approach: Idiopathic epilepsies were defined as a heterogeneous group of seizure disorders that show no underlying cause .Voltage-gated ion channels defect were recognized etiology of epilepsy in the central nervous system. The aim of this article was to provide an update on voltage-gated channels and their mutation as causative agents for epilepsies. We described the structures of the voltage-gated channels, discuss their current genetic studies, and then review the effects of voltage-gated channels as causative agents for epilepsies. Results: Channels control the flow of ions in and out of the cell causing depolarization and hyper polarization of the cell. Voltage-gated channels were classified into four types: Sodium, potassium calcium ands chloride. Voltage-gated channels were macromolecular protein complexes within the lipid membrane. They were divided into subunits. Each subunit had a specific function and was encoded by more than one gen. Conclusion: Current genetic studies of idiopathic epilepsies show the importance of genetic influence on Voltage-gated channels. Different genes may regulate a function in a channel; the channel defect was directly responsible for neuronal hyper excitability and seizures.

  1. Gated Si nanowires for large thermoelectric power factors

    Energy Technology Data Exchange (ETDEWEB)

    Neophytou, Neophytos, E-mail: N.Neophytou@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Kosina, Hans [Institute for Microelectronics, Vienna University of Technology, Gusshausstrasse 27-29/E360, Vienna A-1040 (Austria)

    2014-08-18

    We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20 nm in diameter in the [100], [110], and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ∼5× larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20 nm diameters (the largest ones that we were able to simulate), a ∼3× higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ∼40 nm.

  2. Emergence of ion channel modal gating from independent subunit kinetics.

    Science.gov (United States)

    Bicknell, Brendan A; Goodhill, Geoffrey J

    2016-09-06

    Many ion channels exhibit a slow stochastic switching between distinct modes of gating activity. This feature of channel behavior has pronounced implications for the dynamics of ionic currents and the signaling pathways that they regulate. A canonical example is the inositol 1,4,5-trisphosphate receptor (IP3R) channel, whose regulation of intracellular Ca(2+) concentration is essential for numerous cellular processes. However, the underlying biophysical mechanisms that give rise to modal gating in this and most other channels remain unknown. Although ion channels are composed of protein subunits, previous mathematical models of modal gating are coarse grained at the level of whole-channel states, limiting further dialogue between theory and experiment. Here we propose an origin for modal gating, by modeling the kinetics of ligand binding and conformational change in the IP3R at the subunit level. We find good agreement with experimental data over a wide range of ligand concentrations, accounting for equilibrium channel properties, transient responses to changing ligand conditions, and modal gating statistics. We show how this can be understood within a simple analytical framework and confirm our results with stochastic simulations. The model assumes that channel subunits are independent, demonstrating that cooperative binding or concerted conformational changes are not required for modal gating. Moreover, the model embodies a generally applicable principle: If a timescale separation exists in the kinetics of individual subunits, then modal gating can arise as an emergent property of channel behavior.

  3. Single-loop multiple-pulse nonadiabatic holonomic quantum gates

    Science.gov (United States)

    Herterich, Emmi; Sjöqvist, Erik

    2016-11-01

    Nonadiabatic holonomic quantum computation provides the means to perform fast and robust quantum gates by utilizing the resilience of non-Abelian geometric phases to fluctuations of the path in state space. While the original scheme [E. Sjöqvist et al., New J. Phys. 14, 103035 (2012), 10.1088/1367-2630/14/10/103035] needs two loops in the Grassmann manifold (i.e., the space of computational subspaces of the full state space) to generate an arbitrary holonomic one-qubit gate, we propose single-loop one-qubit gates that constitute an efficient universal set of holonomic gates when combined with an entangling holonomic two-qubit gate. Our one-qubit gate is realized by dividing the loop into path segments, each of which is generated by a Λ -type Hamiltonian. We demonstrate that two path segments are sufficient to realize arbitrary single-loop holonomic one-qubit gates. We describe how our scheme can be implemented experimentally in a generic atomic system exhibiting a three-level Λ -coupling structure by utilizing carefully chosen laser pulses.

  4. Scaling issues for analogue circuits using Double Gate SOI transistors

    Science.gov (United States)

    Lim, Tao Chuan; Armstrong, G. Alastair

    2007-02-01

    This work presents a systematic analysis on the impact of source-drain engineering using gate "non-overlapped" on the RF performance of nano-scaled fully depleted Double Gate SOI transistors, when used in the design of a typical two stage Operational Transconductance Amplifier (OTA). It is evident that for a gate length less than 40 nm, the incorporation of optimal source-drain engineering requiring a spacer length, which may exceed the length of the gate, is particularly beneficial in analogue applications. Lengthening the spacer reduces gate capacitance in the weak/moderate inversion region more than transconductance, improving cut-off frequency fT. This improvement is particularly significant in a circuit application where an optimal spacer of 1.5 times the gate length is proposed. This gate under-lapped concept with extended spacer can also significantly enhance DC gain of the OTA, by increasing the Early Voltage, while maximising the transconductance to current ratio in the weak to moderate inversion, close to threshold voltage. With optimally designed devices, the sensitivity of OTA circuit performance to doping profile is shown to be relatively low.

  5. Gated Clock Implementation of Arithmetic Logic Unit (ALU

    Directory of Open Access Journals (Sweden)

    Dr. Neelam R. Prakash

    2013-05-01

    Full Text Available Low power design has emerged as one of the challenging area in today’s ASIC (Application specific integrated circuit design. With continuous decrease in transistor size, power density is increasing and there is an urgent need for reduction in total power consumption. Clock gating is one most effective technique for low power synchronous circuit design. Clock gating technique in low power design is used to reduce the dynamic power consumption. Clock signal in a synchronous circuit is used for synchronization only and hence does not carry any important information. Since clock is applied to each block of a synchronous circuit, and clock switches for every cycle, clock power is the major part of dynamic power consumption in synchronous circuits. Clock gating is a well known technique to reduce clock power. In clock gating clock to an idle block is disabled. Thus significant amount of power consumption is reduced by employing clock gating. In this paper an ALU design is proposed employing Gated clock for its operation. Design simulation has been performed on Xilinx ISE design suite, and power calculation is done by Xilinx Xpower analyzer. Results show that approximately 17% of total clock power consumption is reduced by gated clock implementation.

  6. Automatic gate design model from wood & tire for farmers

    Directory of Open Access Journals (Sweden)

    Indrawan Ivan

    2017-01-01

    Full Text Available Indonesia is one of the potential paddy farming area in Southeast Asia, and North Sumatra Province is one of many provinces that provides it. Yet, Indonesia is still importing rice from foreign country, eventhough today the government has been willing to supply its own need. Almost 10% irrigation areas in Indonesia are connected to sea current, which means it must have a system to manage the circulation of fresh water and block the seawater from entering the irrigation area through the irrigation channel. Many systems use gates to control the water management, and most of them are using automatic sluice gate because the gates are usually positioned far from village, this makes the manual operating become difficult. Unfortunately, not all farmers can use this kind of gate due to its accessibility and cost. This research was done to design the automatic gates, which are easy to build, user friendly, low cost and dependable. In the future, poor farmers or farmers who do not have connection to government, can make this gate by themselves. The research was conducted in laboratory, using flume, pumps, reservoir, and gate prototype.

  7. A realistic 3-D gated cardiac phantom for quality control of gated myocardial perfusion SPET: the Amsterdam gated (AGATE) cardiac phantom

    Energy Technology Data Exchange (ETDEWEB)

    Visser, Jacco J.N.; Busemann Sokole, Ellinor; Verberne, Hein J.; Habraken, Jan B.A.; Eck-Smit, Berthe L.F. van [Department of Nuclear Medicine, Academic Medical Center, Meibergdreef 9, 1105 AZ, Amsterdam (Netherlands); Stadt, Huybert J.F. van de; Jaspers, Joris E.N.; Shehata, Morgan; Heeman, Paul M. [Department of Medical Technological Development, Academic Medical Center, Amsterdam (Netherlands)

    2004-02-01

    A realistic 3-D gated cardiac phantom with known left ventricular (LV) volumes and ejection fractions (EFs) was produced to evaluate quantitative measurements obtained from gated myocardial single-photon emission tomography (SPET). The 3-D gated cardiac phantom was designed and constructed to fit into the Data Spectrum anthropomorphic torso phantom. Flexible silicone membranes form the inner and outer walls of the simulated left ventricle. Simulated LV volumes can be varied within the range 45-200 ml. The LV volume curve has a smooth and realistic clinical shape that is produced by a specially shaped cam connected to a piston. A fixed 70-ml stroke volume is applied for EF measurements. An ECG signal is produced at maximum LV filling by a controller unit connected to the pump. This gated cardiac phantom will be referred to as the Amsterdam 3-D gated cardiac phantom, or, in short, the AGATE cardiac phantom. SPET data were acquired with a triple-head SPET system. Data were reconstructed using filtered back-projection following pre-filtering and further processed with the Quantitative Gated SPECT (QGS) software to determine LV volume and EF values. Ungated studies were performed to measure LV volumes ranging from 45 ml to 200 ml. The QGS-determined LV volumes were systematically underestimated. For different LV combinations, the stroke volumes measured were consistent at 60-61 ml for 8-frame studies and 63-65 ml for 16-frame studies. QGS-determined EF values were slightly overestimated between 1.25% EF units for 8-frame studies and 3.25% EF units for 16-frame studies. In conclusion, the AGATE cardiac phantom offers possibilities for quality control, testing and validation of the whole gated cardiac SPET sequence, and testing of different acquisition and processing parameters and software. (orig.)

  8. Stability control of gate groups in deep wells

    Energy Technology Data Exchange (ETDEWEB)

    Zhi-biao Guo; Ping-ye Guo; Mao-hong Huang; Yin-gen Liu [China University of Mining & Technology, Beijing (China). School of Geotechnical Engineering

    2009-03-15

    In order to study stability control methods for a deep gate group under complex stresses, we conducted field investigations and analyses of reasons for damage in the Xuzhou coal mining district. Three reasons are proposed: deep high stress, improper roadway layout and support technology. The stability control countermeasures of the gate group consist of an intensive design technology and responding bolt-mesh-anchor truss support technology. Our research method has been applied at the -1000 m level gate group in Qishan Coal Mine. Suitable countermeasures have been tested by field monitoring. 16 refs., 9 figs.

  9. Electron transport in a slot-gate Si MOSFET

    OpenAIRE

    Shlimak, I.; Ginodman, V.; Butenko, A.; Friedland, K. -J.; Kravchenko, S. V.

    2008-01-01

    The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages ...

  10. Optimal quantum circuit synthesis from Controlled-U gates

    CERN Document Server

    Zhang, J; Sastry, S; Whaley, K B; Zhang, Jun; Vala, Jiri; Sastry, Shankar

    2003-01-01

    From a geometric approach, we derive the minimum number of applications needed for an arbitrary Controlled-Unitary gate to construct a universal quantum circuit. A new analytic construction procedure is presented and shown to be either optimal or close to optimal. This result can be extended to improve the efficiency of universal quantum circuit construction from any entangling gate. Specifically, for both the Controlled-NOT and Double-CNOT gates, we develop simple analytic ways to construct universal quantum circuits with three applications, which is the least possible.

  11. Stability control of gate groups in deep wells

    Institute of Scientific and Technical Information of China (English)

    GUO Zhi-biao; GUO Ping-ye; HUANG Mao-hong; LIU Yin-gen

    2009-01-01

    In order to study stability control methods for a deep gate group under complex stresses, we conducted field investiga-tions and analyses of reasons for damage in the Xuzhou mining district. Three reasons are proposed: deep high stress, improper roadway layout and support technology. The stability control countermeasures of the gate group consist of an intensive design technology and responding bolt-mesh-anchor truss support technology. Our research method has been applied at the -1000 m level gate group in Qishan Coal Mine. Suitable countermeasures have been tested by field monitoring.

  12. Flexural-Phonon Scattering Induced by Electrostatic Gating in Graphene

    DEFF Research Database (Denmark)

    Gunst, Tue; Kaasbjerg, Kristen; Brandbyge, Mads

    2017-01-01

    Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry, yielding a coupling mechanism to the flexural phonons.......We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility...

  13. Forward gated-diode method for parameter extraction of MOSFETs*

    Institute of Scientific and Technical Information of China (English)

    Zhang Chenfei; Ma Chenyue; Guo Xinjie; Zhang Xiufang; He Jin; Wang Guozeng; Yang Zhang; Liu Zhiwei

    2011-01-01

    The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

  14. Fast synthesis of the Fredkin gate via quantum Zeno dynamics

    Science.gov (United States)

    Shao, Xiao-Qiang; Zheng, Tai-Yu; Zhang, Shou

    2012-12-01

    We propose a scheme for fast synthesizing the Fredkin gate with rf SQUID qubits. This scheme utilizes the quantum Zeno dynamics induced by continuous couplings and the non-identical couplings between SQUIDs and superconducting cavity. The effects of decoherence on the performance for the gate are analyzed in virtue of master equation and non-unitary evolution with full Hamiltonian. The strictly numerical simulation shows that the fidelity of this Fredkin gate is relatively high corresponding to current typical experimental parameters. Furthermore, an equivalent physical model is also constructed in an array of coupled cavities.

  15. Multimeric nature of voltage-gated proton channels

    OpenAIRE

    Koch, Hans P.; Kurokawa, Tatsuki; Okochi, Yoshifumi; Sasaki, Mari; Okamura, Yasushi; Larsson, H. Peter

    2008-01-01

    Voltage-gated potassium channels are comprised of four subunits, and each subunit has a pore domain and a voltage-sensing domain (VSD). The four pore domains assemble to form one single central pore, and the four individual VSDs control the gate of the pore. Recently, a family of voltage-gated proton channels, such as HV or voltage sensor only protein (VSOP), was discovered that contain a single VSD but no pore domain. It has been assumed that VSOP channels are monomeric and contain a single ...

  16. Unconventional geometric quantum phase gates with a cavity QED system

    Science.gov (United States)

    Zheng, Shi-Biao

    2004-11-01

    We propose a scheme for realizing two-qubit quantum phase gates via an unconventional geometric phase shift with atoms in a cavity. In the scheme the atoms interact simultaneously with a highly detuned cavity mode and a classical field. The atoms undergo no transitions during the gate operation, while the cavity mode is displaced along a circle in the phase space, aquiring a geometric phase conditional upon the atomic state. Under certain conditions, the atoms are disentangled with the cavity mode and thus the gate is insensitive to both the atomic spontaneous emission and the cavity decay.

  17. Electrically tuneable spectral responsivity in gated silicon photodiodes

    Science.gov (United States)

    Abid, Kamran; Wang, Xingsheng; Khokhar, Ali Z.; Watson, Scott; Al-Hasani, Sulaiman; Rahman, Faiz

    2011-12-01

    We report the observation of electrically tuneable spectral responsivity in silicon-based photodetectors. The current flowing through a lateral p-i-n junction photodiode can be changed by changing either the gate bias or the intensity of incident light, with the devices exhibiting typical optical responsivities of 65 A/W. The peak sensitivity of the device can be changed over the entire visible region by changing the gate voltage in a 5 V range. This happens because with increasing gate bias, an accumulation layer of holes is pulled closer to the Si-SiO2 interface, enhancing the blue response of the device.

  18. Fast CNOT gate via shortcuts to adiabatic passage

    Science.gov (United States)

    Wang, Zhe; Xia, Yan; Chen, Ye-Hong; Song, Jie

    2016-10-01

    Based on the shortcuts to adiabatic passage, we propose a scheme for directly implementing a controlled-not (CNOT) gate in a cavity quantum electrodynamics system. Moreover, we generalize the scheme to realize a CNOT gate in two separate cavities connected by an optical fiber. The strictly numerical simulation shows that the schemes are fast and insensitive to the decoherence caused by atomic spontaneous emission and photon leakage. In addition, the schemes can provide a theoretical basis for the manipulation of the multiqubit quantum gates in distant nodes of a quantum network.

  19. All-Optical Reversible Hybrid New Gate using TOAD

    Directory of Open Access Journals (Sweden)

    Goutam Kumar Maity

    2014-03-01

    Full Text Available Reversible logic is emerged as a promising computing paradigm with applications in low-power CMOS, quantum computing, optical computing and nanotechnology. Optical logic gates become potential component to work at macroscopic (light pulses carry information, or quantum (single photon carries information levels with high efficiency. In this paper, we propose a novel scheme of Hybrid new gate realization in all-optical domain. Simulation results verify the functionality of the gate as well as reversibility. Approximate insertion power loss in dB is also reported for the Gaussian incident and control pulse.

  20. Novel Low Power Comparator Design using Reversible Logic Gates

    Directory of Open Access Journals (Sweden)

    Nagamani A N

    2011-09-01

    Full Text Available Reversible logic has received great attention in the recent years due to its ability to reduce the power dissipation which is the main requirement in low power digital design. It has wide applications inadvanced computing, low power CMOS design, Optical information processing, DNA computing, bio information, quantum computation and nanotechnology. This paper presents a novel design of reversiblecomparator using the existing reversible gates and proposed new Reversible BJN gate. All the comparators have been modeled and verified using VHDL and ModelSim. A comparative result is presented in terms of number of gates, number of garbage outputs, number of constant inputs and Quantum cost.

  1. Creativity and sensory gating indexed by the P50: selective versus leaky sensory gating in divergent thinkers and creative achievers.

    Science.gov (United States)

    Zabelina, Darya L; O'Leary, Daniel; Pornpattananangkul, Narun; Nusslock, Robin; Beeman, Mark

    2015-03-01

    Creativity has previously been linked with atypical attention, but it is not clear what aspects of attention, or what types of creativity are associated. Here we investigated specific neural markers of a very early form of attention, namely sensory gating, indexed by the P50 ERP, and how it relates to two measures of creativity: divergent thinking and real-world creative achievement. Data from 84 participants revealed that divergent thinking (assessed with the Torrance Test of Creative Thinking) was associated with selective sensory gating, whereas real-world creative achievement was associated with "leaky" sensory gating, both in zero-order correlations and when controlling for academic test scores in a regression. Thus both creativity measures related to sensory gating, but in opposite directions. Additionally, divergent thinking and real-world creative achievement did not interact in predicting P50 sensory gating, suggesting that these two creativity measures orthogonally relate to P50 sensory gating. Finally, the ERP effect was specific to the P50 - neither divergent thinking nor creative achievement were related to later components, such as the N100 and P200. Overall results suggest that leaky sensory gating may help people integrate ideas that are outside of focus of attention, leading to creativity in the real world; whereas divergent thinking, measured by divergent thinking tests which emphasize numerous responses within a limited time, may require selective sensory processing more than previously thought. Copyright © 2015 Elsevier Ltd. All rights reserved.

  2. Image shutters: Gated proximity-focused Microchannel Plate (MCP) wafer tubes versus gated Silicon Intensified Target (SIT) vidicons

    Science.gov (United States)

    Yates, G. J.; King, N. S. P.; Jaramillo, S. A.; Ogle, J. W.; Noel, B. W.; Thayer, N. N.

    Response data, including gating speed, gain, dynamic range, shuttering efficiency, and resolution for 18- and 25-mm-diam proximity-focused microchannel-plate (MCP) intensifiers are compared with similar data for a prototype electrostatically-focused 25-mm-diam gated silicon-intensified-target (SIT) vidicon. Conductive substrate material and thickness used to reduce photocathode resistivity, spacing between gating electrodes to minimize inter-electrode capacitance, the use of conductive grids on the photocathode substrate to permit rapid propagation of the electrical gate pulse to all areas of the photocathode, and different package geometries to provide a more effective interface with external biasing and gating circuitry were varied in both tube types to determine optimal performance from each design. For comparable spatial resolution, most 18-mm-diam MCPs require gate times 2.5 ns while the fastest SIT has demonstrated sub-nanosecond optical gates as short as approximately 400 + or - 50 ps for full shuttering of the 25-mm-diam input window.

  3. A Customizable Quantum-Dot Cellular Automata Building Block for the Synthesis of Classical and Reversible Circuits

    Directory of Open Access Journals (Sweden)

    Ahmed Moustafa

    2015-01-01

    Full Text Available Quantum-dot cellular automata (QCA are nanoscale digital logic constructs that use electrons in arrays of quantum dots to carry out binary operations. In this paper, a basic building block for QCA will be proposed. The proposed basic building block can be customized to implement classical gates, such as XOR and XNOR gates, and reversible gates, such as CNOT and Toffoli gates, with less cell count and/or better latency than other proposed designs.

  4. A Customizable Quantum-Dot Cellular Automata Building Block for the Synthesis of Classical and Reversible Circuits.

    Science.gov (United States)

    Moustafa, Ahmed; Younes, Ahmed; Hassan, Yasser F

    2015-01-01

    Quantum-dot cellular automata (QCA) are nanoscale digital logic constructs that use electrons in arrays of quantum dots to carry out binary operations. In this paper, a basic building block for QCA will be proposed. The proposed basic building block can be customized to implement classical gates, such as XOR and XNOR gates, and reversible gates, such as CNOT and Toffoli gates, with less cell count and/or better latency than other proposed designs.

  5. Second Quantization Representation of Quantum Logic Gate Transformations

    Institute of Scientific and Technical Information of China (English)

    MA Lei; ZHANG Yong-De

    2001-01-01

    By using the theory of multimode linear transformation in Fock space, we offer an effective method to study the quantum logic gates based on fermion states. The forms of some basic quantum logic operations are also obtained.

  6. Gates at Little Bighorn Battlefield National Monument, Montana

    Data.gov (United States)

    National Park Service, Department of the Interior — This is a vector point file showing the gates at Little Bighorn Battlefield National Monument (LIBI). The coordinates for this dataset were collected using a Trimble...

  7. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  8. Acid/alkali gated photochromism of two diarylperfluorocyclopentenes

    Institute of Scientific and Technical Information of China (English)

    CHEN; ZiHui; ZHAO; ShengMin; LI; ZhongYu; ZHANG; Zhi; ZHANG; FuShi

    2007-01-01

    Two novel diarylfuorocyclopentenes, which underwent gated photochromism, were synthesized. It was found that the photochromic property of these diarylethenes could be switched by alternative addition of acids/alkalis, which could provide a new design strategy toward chemical threshold photoreaction.

  9. Enhancing the fidelity of two-qubit gates by measurements

    Science.gov (United States)

    Gefen, Tuvia; Cohen, Daniel; Cohen, Itsik; Retzker, Alex

    2017-03-01

    Dynamical decoupling techniques are the method of choice for increasing gate fidelities. While these methods have produced very impressive results in terms of decreasing local noise and increasing the fidelities of single-qubit operations, dealing with the noise of two-qubit gates has proven more challenging. The main obstacle is that the noise time scale is shorter than the two-qubit gate itself, so that refocusing methods do not work. We present a measurement- and feedback-based method to suppress two-qubit-gate noise, which cannot be suppressed by conventional methods. We analyze in detail this method for an error model, which is relevant for trapped-ion quantum information.

  10. Compiling quantum algorithms for architectures with multi-qubit gates

    Science.gov (United States)

    Martinez, Esteban A.; Monz, Thomas; Nigg, Daniel; Schindler, Philipp; Blatt, Rainer

    2016-06-01

    In recent years, small-scale quantum information processors have been realized in multiple physical architectures. These systems provide a universal set of gates that allow one to implement any given unitary operation. The decomposition of a particular algorithm into a sequence of these available gates is not unique. Thus, the fidelity of the implementation of an algorithm can be increased by choosing an optimized decomposition into available gates. Here, we present a method to find such a decomposition, where a small-scale ion trap quantum information processor is used as an example. We demonstrate a numerical optimization protocol that minimizes the number of required multi-qubit entangling gates by design. Furthermore, we adapt the method for state preparation, and quantum algorithms including in-sequence measurements.

  11. Turning Oscillations Into Opportunities: Lessons from a Bacterial Decision Gate

    Science.gov (United States)

    Schultz, Daniel; Lu, Mingyang; Stavropoulos, Trevor; Onuchic, Jose'; Ben-Jacob, Eshel

    2013-04-01

    Sporulation vs. competence provides a prototypic example of collective cell fate determination. The decision is performed by the action of three modules: 1) A stochastic competence switch whose transition probability is regulated by population density, population stress and cell stress. 2) A sporulation timer whose clock rate is regulated by cell stress and population stress. 3) A decision gate that is coupled to the timer via a special repressilator-like loop. We show that the distinct circuit architecture of this gate leads to special dynamics and noise management characteristics: The gate opens a time-window of opportunity for competence transitions during which it generates oscillations that are turned into a chain of transition opportunities - each oscillation opens a short interval with high transition probability. The special architecture of the gate also leads to filtering of external noise and robustness against internal noise and variations in the circuit parameters.

  12. EXPERIMENTAL INVESTIGATION OF EMERGENCY GATE SHUTTING FOR ORIFICE TUNNEL

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    In the process of the emergence gate shutting of one orifice tunnel, a big noise and great vibration may be observed in the mid gate chamber. In order to guarantee the working safety of orifice tunnels, an experimental investiga-tion is carried out in Sichuan University. In the investigation,the fluctuation pressure along the tunnel and the wind velocity in the entry of emergency gate are measured. In the mean time, the fluid state in orifice tunnel is carefully observed and analyzed. The reasons of the noise and vibration in the mid gate chamber are found out and some countermeasures are presented in this paper. The conclusions are useful to the ori-fice tunnels with high water head and huge discharge.

  13. NOVEL REVERSIBLE VARIABLE PRECISION MULTIPLIER USING REVERSIBLE LOGIC GATES

    National Research Council Canada - National Science Library

    M. Saravanan; K. Suresh Manic

    2014-01-01

    .... In this study a reversible logic gate based design of variable precision multiplier is proposed which have the greater efficiency in power consumption and speed since the partial products received...

  14. Partial Reversible Gates(PRG) for Reversible BCD Arithmetic

    CERN Document Server

    Thapliyal, Himanshu; Bajpai, Rajnish; Sharma, Kamal K

    2007-01-01

    IEEE 754r is the ongoing revision to the IEEE 754 floating point standard and a major enhancement to the standard is the addition of decimal format. Furthermore, in the recent years reversible logic has emerged as a promising computing paradigm having its applications in low power CMOS, quantum computing, nanotechnology, and optical computing. The major goal in reversible logic is to minimize the number of reversible gates and garbage outputs. Thus, this paper proposes the novel concept of partial reversible gates that will satisfy the reversibility criteria for specific cases in BCD arithmetic. The partial reversible gate is proposed to minimize the number of reversible gates and garbage outputs, while designing the reversible BCD arithmetic circuits.

  15. All-optical gates based on photonic crystal resonators

    Science.gov (United States)

    Moille, Grégory; De Rossi, Alfredo; Combrié, Sylvain

    2016-04-01

    We briefly review the technology of advanced nonlinear resonators for all-optical gating with a specific focus on the application of high-performance signal sampling and on the properties of III-V semiconductor photonic crystals

  16. Controlled Phase Gate Based on an Electron Floating on Helium

    Institute of Scientific and Technical Information of China (English)

    SHI Yan-Li; MEI Feng; YU Ya-Fei; ZHANG Zhi-Ming

    2011-01-01

    We propose a scheme to generate the controlled phase gate by using an electron floating on liquid helium. The electron is also driven by a classical laser beam and by an oscillating magnetic field. In the process, the vibration of the electron is used as the qubus to couple the energy level qubit (1D Stark-shifted hydrogen) and spin qubit Ultimately. the controlled phase gate can be generated.%@@ We propose a scheme to generate the controlled phase gate by using an electron floating on liquid helium.The electron is also driven by a classical laser beam and by an oscillating magnetic field.In the process,the vibration of the electron is used as the qubus to couple the energy level qubit(1D Stark-shifted hydrogen) and spin qubit.Ultimately,the controlled phase gate can be generated.

  17. Design of CMOS logic gates for TID radiation

    Science.gov (United States)

    Attia, John Okyere; Sasabo, Maria L.

    1993-01-01

    The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.

  18. Microfluidic pressure amplifier circuits and electrostatic gates for pneumatic microsystems

    Energy Technology Data Exchange (ETDEWEB)

    Tice, Joshua D.; Bassett, Thomas A.; Desai, Amit V.; Apblett, Christopher A.; Kenis, Paul J. A.

    2016-09-20

    An electrostatic actuator is provide that can include a fluidic line, a first electrode, and a second electrode such that a gate chamber portion of the fluidic line is sandwiched between the first electrode and the second electrode. The electrostatic actuator can also include a pressure-balancing channel in fluid communication with the gate chamber portion where the first electrode is sandwiched between the pressure-balancing channel and the gate chamber portion. A pneumatic valve system is provided which includes an electrostatic gate and a fluidic channel fluidly separate from a fluidic control line. A pneumatic valve portion of the fluidic control line can be positioned relative to a portion of the fluidic channel such that expansion of the pneumatic valve portion restricts fluid flow through the fluidic channel. Methods of using an electrostatic actuator and a pneumatic valve system are also provided.

  19. Gated magnetic resonance imaging of the normal and diseased heart

    Energy Technology Data Exchange (ETDEWEB)

    Lieberman, J.M.; Alfidi, R.J.; Nelson, A.D.; Botti, R.E.; Moir, T.W.; Haaga, J.R.; Kopiwoda, S.; Miraldi, F.D.; Cohen, A.M.; Butler, H.E.

    1984-08-01

    Gated cardiac magnetic resonance (MR) images were obtained in two normal volunteers and 21 adults with a variety of cardiovascular abnormalities. The images were correlated with data from clinical examination, electrocardiograms, and cardiac catheterization. Gated cardiac images were superior to nongated images. Combined cardiac and respiratory gated images were superior to images obtained with cardiac gating only, but acquisition time was longer. Portions of the coronary arteries were visualized in seven of 23 examinations (30%), and subacute and old myocardial infarcts were seen in five of nine patients (55%) as areas of thinned myocardium. Normal cardiac anatomy (chambers, valves, and papillary muscles) was well visualized. Examples of aortic stenosis and atherosclerosis of the abdominal aorta are shown.

  20. Delay Testing Viability of Gate Oxide Short Defects

    Institute of Scientific and Technical Information of China (English)

    J. M. Gallière; M. Renovell; F.Aza(i)s; Y. Bertrand

    2005-01-01

    Gate Oxide Short (GOS) defects are becoming predominant as technology is scaling down. Boolean and IDDQ testing of this defect has been widely studied but there is no paper dedicated to delay testing of this defect. So, this paper studies the delay behavior of Gate Oxide Short faults due to pinhole in the gate oxide. The objective of this paper is to give a detailed analysis of the behavior of the GOS defect taking into account the random parameter of the defect such as the GOS resistance and the GOS location. Because an accurate analysis is desired, the bi-dimensional array will be used.Because a complete analysis is desired, we derive the dynamic characteristic of the GOS as a function of the GOS resistance and location. It is demonstrated that i) GOS has a significant impact on gate delay, ii) GOS located close to the source of the transistor and with small resistance has very high impact.

  1. Implanted bottom gate for epitaxial graphene on silicon carbide

    Science.gov (United States)

    Waldmann, D.; Jobst, J.; Fromm, F.; Speck, F.; Seyller, T.; Krieger, M.; Weber, H. B.

    2012-04-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

  2. Gates at Little Bighorn Battlefield National Monument, Montana

    Data.gov (United States)

    National Park Service, Department of the Interior — This is a vector point file showing the gates at Little Bighorn Battlefield National Monument (LIBI). The coordinates for this dataset were collected using a...

  3. Voltage-gated Calcium Channels and Autism Spectrum Disorders.

    Science.gov (United States)

    Breitenkamp, Alexandra F; Matthes, Jan; Herzig, Stefan

    2015-01-01

    Autism spectrum disorder is a complex-genetic disease and its etiology is unknown for the majority of cases. So far, more than one hundred different susceptibility genes were detected. Voltage-gated calcium channels are among the candidates linked to autism spectrum disorder by results of genetic studies. Mutations of nearly all pore-forming and some auxiliary subunits of voltage gated calcium channels have been revealed from investigations of autism spectrum disorder patients and populations. Though there are only few electrophysiological characterizations of voltage-gated calcium channel mutations found in autistic patients these studies suggest their functional relevance. In summary, both genetic and functional data suggest a potential role of voltage-gated calcium channels in autism spectrum disorder. Future studies require refinement of the clinical and systems biological concepts of autism spectrum disorder and an appropriate holistic approach at the molecular level, e.g. regarding all facets of calcium channel functions.

  4. Gated communities in South Africa: Tensions between the planning ...

    African Journals Online (AJOL)

    Gated communities transform urban space from open space to enclosed space where access is restricted and ... Design” at the University of Pretoria. ...... ing to facilitate action-based learning .... Architectural and Planning Research,. 26(3), pp ...

  5. Percolation, renormalization, and quantum computing with nondeterministic gates.

    Science.gov (United States)

    Kieling, K; Rudolph, T; Eisert, J

    2007-09-28

    We apply a notion of static renormalization to the preparation of entangled states for quantum computing, exploiting ideas from percolation theory. Such a strategy yields a novel way to cope with the randomness of nondeterministic quantum gates. This is most relevant in the context of optical architectures, where probabilistic gates are common, and cold atoms in optical lattices, where hole defects occur. We demonstrate how to efficiently construct cluster states without the need for rerouting, thereby avoiding a massive amount of conditional dynamics; we furthermore show that except for a single layer of gates during the preparation, all subsequent operations can be shifted to the final adapted single-qubit measurements. Remarkably, cluster state preparation is achieved using essentially the same scaling in resources as if deterministic gates were available.

  6. High Accuracy and Real-Time Gated Viewing Laser Radar

    Institute of Scientific and Technical Information of China (English)

    Dong Li; Hua-Jun Yang; Shan-Pei Zhou

    2011-01-01

    A gated viewing laser radar has an excellent performance in underwater low light level imaging,and it also provides a viable solution to inhibit backscattering.In this paper,a gated viewing imaging system according to the demand for real-time imaging is presented,and then the simulation is used to analyze the performance of the real-time gated viewing system.The range accuracy performance is limited by the slice number,the width of gate,the delay time step,the initial delay time,as well as the system noise and atmospheric turbulence.The simulation results indicate that the highest range accuracy can be achieved when the system works with the optimal parameters.Finally,how to choose the optimal parameters has been researched.

  7. Using photoconductivity to improve image-tube gating speeds

    Science.gov (United States)

    Gobby, P. L.; Yates, G. J.; Jaramillo, S. A.; Noel, B. W.; Aeby, I.

    1983-08-01

    A technique using the photoconducting of semiconductor and insulator photocathodes to improve image tube gating speeds is presented. A simple model applicable to the technique and a preliminary experiment are described.

  8. STIR: Novel Electronic States by Gating Strongly Correlated Materials

    Science.gov (United States)

    2016-03-01

    understood, has long been the foundation for electronic devices. What if we could apply these techniques to a much broader range of materials ? This short...grant aimed at demonstrating such large potential modulations in correlated electron materials using a technique known as electrolyte gating. This...of Papers published in non peer-reviewed journals: Final Report: STIR: Novel Electronic States by Gating Strongly Correlated Materials Report Title

  9. The effect of metal detector gates on implanted permanent pacemakers.

    Science.gov (United States)

    Copperman, Y; Zarfati, D; Laniado, S

    1988-10-01

    The effect of metal detector security gates, such as are used in airports, was tested in 103 nonselected pacemaker patients. Various types of single and dual chamber units were examined, using telemetry during the test. Pulse rate and duration were measured immediately before and after the procedure. No ill effect was seen on any of the units tested, pacemaker inhibition was not observed, and programmability was not affected. Metal detector security gates have no effect on implanted permanent pacemakers.

  10. The use of meta-heuristics for airport gate assignment

    DEFF Research Database (Denmark)

    Cheng, Chun-Hung; Ho, Sin C.; Kwan, Cheuk-Lam

    2012-01-01

    Improper assignment of gates may result in flight delays, inefficient use of the resource, customer’s dissatisfaction. A typical metropolitan airport handles hundreds of flights a day. Solving the gate assignment problem (GAP) to optimality is often impractical. Meta-heuristics have recently been...... are collected to carry out the computational comparison. Although the literature has documented these algorithms, this work may be a first attempt to evaluate their performance using a set of realistic flight data....

  11. Experimental 3D Asynchronous Field Programmable Gate Array (FPGA)

    Science.gov (United States)

    2015-03-01

    EXPERIMENTAL 3D ASYNCHRONOUS FIELD PROGRAMMABLE GATE ARRAY ( FPGA ) CORNELL UNIVERSITY MARCH 2015 FINAL TECHNICAL REPORT APPROVED FOR PUBLIC...From - To) OCT 2011 – OCT 2014 4. TITLE AND SUBTITLE EXPERIMENTAL 3D ASYNCHRONOUS FIELD PROGRAMMABLE GATE ARRAY ( FPGA ) 5a. CONTRACT NUMBER...in collaboration with Albany’s College of Nanoscale Science and Engineering. 15. SUBJECT TERMS 3D Technology, vertical interconnects, AFPGA, FPGA

  12. Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

    OpenAIRE

    Hediyeh Karimi; Rubiyah Yusof; Mohammad Taghi Ahmadi; Mehdi Saeidmanesh; Meisam Rahmani; Elnaz Akbari; Wong King Kiat

    2013-01-01

    Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presen...

  13. Voltage-Gated Channels as Causative Agents for Epilepsies

    OpenAIRE

    2008-01-01

    Problem statement: Epilepsy is a common neurological disorder that afflicts 1-2% of the general population worldwide. It encompasses a variety of disorders with seizures. Approach: Idiopathic epilepsies were defined as a heterogeneous group of seizure disorders that show no underlying cause .Voltage-gated ion channels defect were recognized etiology of epilepsy in the central nervous system. The aim of this article was to provide an update on voltage-gated ...

  14. Adiabatic holonomic quantum gates for a single qubit

    Science.gov (United States)

    Malinovsky, Vladimir S.; Rudin, Sergey

    2014-04-01

    A universal set of single qubit holonomic quantum gates using the geometric phase that the qubit wave function acquires after a cyclic evolution is discussed. The proposed scheme utilizes ultrafast linearly chirped pulses and provides a possibility to substantially suppress transient population of the ancillary state in a generic three-level system. That provides a possibility to reduce the decoherence effect and achieve a higher fidelity of the quantum gates.

  15. Smart Gating Multi-Scale Pore/Channel-Based Membranes.

    Science.gov (United States)

    Hou, Xu

    2016-09-01

    Smart gating membranes are important and promising in membrane science and technology. Rapid progress in developing smart membranes is transforming technology in many different fields, from energy and environmental to the life sciences. How a specific smart behavior for controllable gating of porous membranes can be obtained, especially for nano- and micrometer-sized multi-scale pore/channel-based membrane systems is addressed.

  16. A Novel Depletion-Mode MOS Gated Emitter Shorted Thyristor

    Institute of Scientific and Technical Information of China (English)

    张鹤鸣; 戴显英; 张义门; 马晓华; 林大松

    2000-01-01

    A Novel MOS-gated thyristor, depletion-mode MOS gated emitter shorted thyristor (DMST),and its two structures are proposed. In DMST,the channel of depletion-mode MOS makes the thyristor emitter-based junction inherently short. The operation of the device is controlled by the interruption and recovery of the depletion-mode MOS P channel. The perfect properties have been demonstrated by 2-D numerical simulations and the tests on the fabricated chips.

  17. Voltage-dependent gating of hERG potassium channels

    Directory of Open Access Journals (Sweden)

    Yen May eCheng

    2012-05-01

    Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

  18. Molecular biology and biophysical properties of ion channel gating pores.

    Science.gov (United States)

    Moreau, Adrien; Gosselin-Badaroudine, Pascal; Chahine, Mohamed

    2014-11-01

    The voltage sensitive domain (VSD) is a pivotal structure of voltage-gated ion channels (VGICs) and plays an essential role in the generation of electrochemical signals by neurons, striated muscle cells, and endocrine cells. The VSD is not unique to VGICs. Recent studies have shown that a VSD regulates a phosphatase. Similarly, Hv1, a voltage-sensitive protein that lacks an apparent pore domain, is a self-contained voltage sensor that operates as an H⁺ channel. VSDs are formed by four transmembrane helices (S1-S4). The S4 helix is positively charged due to the presence of arginine and lysine residues. It is surrounded by two water crevices that extend into the membrane from both the extracellular and intracellular milieus. A hydrophobic septum disrupts communication between these water crevices thus preventing the permeation of ions. The septum is maintained by interactions between the charged residues of the S4 segment and the gating charge transfer center. Mutating the charged residue of the S4 segment allows the water crevices to communicate and generate gating pore or omega pore. Gating pore currents have been reported to underlie several neuronal and striated muscle channelopathies. Depending on which charged residue on the S4 segment is mutated, gating pores are permeant either at depolarized or hyperpolarized voltages. Gating pores are cation selective and seem to converge toward Eisenmann's first or second selectivity sequences. Most gating pores are blocked by guanidine derivatives as well as trivalent and quadrivalent cations. Gating pores can be used to study the movement of the voltage sensor and could serve as targets for novel small therapeutic molecules.

  19. Cnidarian Toxins Acting on Voltage-Gated Ion Channels

    Directory of Open Access Journals (Sweden)

    Robert M. Greenberg

    2006-04-01

    Full Text Available Abstract: Voltage-gated ion channels generate electrical activity in excitable cells. As such, they are essential components of neuromuscular and neuronal systems, and are targeted by toxins from a wide variety of phyla, including the cnidarians. Here, we review cnidarian toxins known to target voltage-gated ion channels, the specific channel types targeted, and, where known, the sites of action of cnidarian toxins on different channels.

  20. Quantum logic gates from Dirac quasiparticles

    Science.gov (United States)

    Marino, E. C.; Brozeguini, J. C.

    2015-03-01

    We show that one of the fundamental operations of topological quantum computation, namely the non-Abelian braiding of identical particles, can be physically realized in a general system of Dirac quasiparticles in 1 + 1D. Our method is based on the study of the analytic structure of the different Euclidean correlation functions of Dirac fields, which are conveniently expressed as functions of a complex variable. When the Dirac field is an (Abelian) anyon with statistics parameter s (2s not an integer), we show that the associated Majorana states of such a field present non-Abelian statistics. The explicit form of the unitary, non-commuting (monodromy) matrices generated upon braiding is derived as a function of s and is shown to satisfy the Yang-Baxter algebra. For the special case of s = 1/4, we show that the braiding matrices become the logic gates NOT, CNOT,… required in the algorithms of universal quantum computation. We suggest that maybe polyacetylene, alternately doped with alkali and halogen atoms, is a potential candidate for a physical material realization of the system studied here.

  1. Capture-Gated Fast Neutron Spectroscopy

    Science.gov (United States)

    Mumm, H. P.; Abdurashitov, J. N.; Beise, E. J.; Breuer, H.; Gavrin, V. N.; Heimbach, C. R.; Langford, T. J.; Mendenhall, M.; Nico, J. S.; Shikhin, A. A.

    2015-10-01

    We present recent developments in fast neutron detection using segmented spectrometers based on the principle of capture-gating. Our approach employs an organic scintillator to detect fast neutrons through their recoil interaction with protons in the scintillator. The neutrons that thermalize and are captured produce a signal indicating that the event was due to a neutron recoil and that the full energy of the neutron was deposited. The delayed neutron capture also serves to discriminate against uncorrelated background events. The segmentation permits reconstruction of the initial neutron energy despite the nonlinear response of the scintillator. We have constructed spectrometers using both He-3 proportional counters and Li-6 doping as capture agents in plastic and liquid organic scintillators. We discuss the operation of the spectrometers for the measurement of low levels of fast neutrons for several applications, including the detection of very low-activity neutron sources and the characterization of the flux and spectrum of fast neutrons at the Earth's surface and in the underground environment.

  2. Gated integrator with signal baseline subtraction

    Science.gov (United States)

    Wang, Xucheng

    1996-01-01

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

  3. Gated integrator with signal baseline subtraction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.

    1996-12-17

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

  4. Final Technical GATE Report, 1998-2006

    Energy Technology Data Exchange (ETDEWEB)

    GATE Fuel Cell Vehicle Center

    2006-09-30

    In 1998, the U.S. Department of Energy (DOE) funded 10 proposals to establish graduate automotive technology education (GATE) centers of excellence at nine universities, each addressing a specific technological area. The University of California, Davis was chosen for two centers: Fuel Cell Center and Hybrid-Electric Vehicle Design Center (power drivetrains and control strategies). This report is specific to the Fuel Cell Center only, which was housed at the UC Davis Institute of Transportation Studies (ITS-Davis). ITS-Davis created the Fuel Cell Vehicle Center, with the following goals: (1) create an interdisciplinary fuel cell vehicle curriculum that cuts across engineering, the physical sciences and, to a lesser extent, the social sciences; (2) expand and strengthen the then-emerging multidisciplinary fuel cell vehicle research program; (3) strengthen links with industry; (4) create an active public outreach program; and (5) serve as neutral ground for interactions between academia, the auto, energy, and technology industries, government, and public-interest non-governmental organizations. At the time of proposal, the Center had a solid track record in fuel cell research, strong connections with industry, strong campus support, a core group of distinguished and motivated faculty, and an established institutional foundation for fuel cell vehicle research and education.

  5. Voltage-Gated Calcium Channels in Nociception

    Science.gov (United States)

    Yasuda, Takahiro; Adams, David J.

    Voltage-gated calcium channels (VGCCs) are a large and functionally diverse group of membrane ion channels ubiquitously expressed throughout the central and peripheral nervous systems. VGCCs contribute to various physiological processes and transduce electrical activity into other cellular functions. This chapter provides an overview of biophysical properties of VGCCs, including regulation by auxiliary subunits, and their physiological role in neuronal functions. Subsequently, then we focus on N-type calcium (Cav2.2) channels, in particular their diversity and specific antagonists. We also discuss the role of N-type calcium channels in nociception and pain transmission through primary sensory dorsal root ganglion neurons (nociceptors). It has been shown that these channels are expressed predominantly in nerve terminals of the nociceptors and that they control neurotransmitter release. To date, important roles of N-type calcium channels in pain sensation have been elucidated genetically and pharmacologically, indicating that specific N-type calcium channel antagonists or modulators are particularly useful as therapeutic drugs targeting chronic and neuropathic pain.

  6. A novel 10-nm physical gate length double-gate junction field effect transistor

    Institute of Scientific and Technical Information of China (English)

    Hou Xiao-Yu; Huang Ru; Chen Gang; Liu Sheng; Zhang Xing; Yu Bin; Wang Yang-Yuan

    2008-01-01

    A novel double-gate (DG) junction field effect transistor (JFET) with depletion operation mode is proposed in this paper.Compared with the conventional DG MOSFET,the novel DG JFET can achieve excellent performance with square body design,which relaxes the requirement on silicon film thickness of DG devices.Moreover,due to the structural symmetry,both p-type and n-type devices can be realized on exactly the same structure,which greatly simplifies integration.It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.

  7. Gates to the CERN site - Changes and reminder

    CERN Multimedia

    2006-01-01

    I. Gate E New international agreements have been concluded between CERN, Switzerland and France concerning Gate E ('Charles de Gaulle Gate') aimed at reducing congestion at the Prévessin-RN84 and Meyrin Route customs posts, in particular during the work associated with the future Cornavin-Meyrin-CERN tram link. On the basis of these agreements, the Director-General has issued a revised version of the Rules for the use of Gate E (document CERN/DSU-RH/12222/Rev.1 which is available on the Relations with Host States website at: http:/www.cern.ch/relations/), which will enter into force as of 1 December 2006, and includes the following provisions: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.00 a.m. to 9.00 a.m. for access to the site, and from 5.00 p.m. to 7.00 p.m. for departure from the site (instead of 7.30 a.m. to 9.00 a.m. and 5.00 p.m. to 6.30 p.m. respectively). The following persons are authorised to use Gate E: members of the CERN personnel (who may be accompanie...

  8. Gates to the CERN site - Changes and reminder

    CERN Multimedia

    2006-01-01

    I. Gate E New international agreements have been concluded between CERN, Switzerland and France concerning Gate E ('Charles de Gaulle Gate') aimed at reducing congestion at the Prévessin-RN84 and Meyrin Route customs posts, in particular during the work associated with the future Cornavin-Meyrin-CERN tram link. On the basis of these agreements, the Director-General has issued a revised version of the Rules for the use of Gate E (document CERN/DSU-RH/12222/Rev.1 which is available on the Relations with Host States website at: http:/www.cern.ch/relations/), which will enter into force as of 1December 2006, and includes the following provisions: Gate E is open from Monday to Friday, except on official CERN holidays, from 7.00 a.m. to 9.00 a.m. for access to the site, and from 5.00 p.m. to 7.00 p.m. for departure from the site (instead of 7.30 a.m. to 9.00 a.m. and 5.00 p.m. to 6.30 p.m. respectively). The following persons are authorised to use Gate E: members of the CERN personnel (who may be accompani...

  9. Rapidly reconfigurable all-optical universal logic gate

    Science.gov (United States)

    Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

    2010-09-07

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  10. Design Multipurpose Circuits with Minimum Garbage Outputs Using CMVMIN Gate

    Directory of Open Access Journals (Sweden)

    Bahram Dehghan

    2014-01-01

    Full Text Available Quantum-dot cellular automata (QCA suggest an emerging computing paradigm for nanotechnology. The QCA offers novel approach in electronics for information processing and communication. QCA have recently become the focus of interest in the field of low power nanocomputing and nanotechnology. The fundamental logic elements of this technology are the majority voter (MV and the inverter (INV. This paper presents a novel design with less garbage output and minimum quantum cost in nanotechnology. In the paper we show how to create multipurpose reversible gates. By development of suitable gates in logic circuits as an example, we can combine MFA and HS in one design using CMVMIN gate. We offer CMVMIN gate implementations to be used in multipurpose circuit. We can produce concurrent half adder/subtractor and one bit comparator in one design using reversible logic gates and CMVMIN gates. Also, a 2×4 decoder from recent architecture has been shown independently. We investigate the result of the proposed design using truth table. A significant improvement in quality of the calculated parameters and variety of required outputs has been achieved.

  11. Quantum gates with optimal bandwidth in noisy environments

    Science.gov (United States)

    Low, Guang Hao; Theodore, Yoder; Chuang, Isaac

    The traditional approach of open-loop quantum error correction suppresses certain systematic imperfections ɛ in quantum control to higher orders ɛ  (L) by a well-designed sequence of L imperfect quantum gates. However, this philosophy of maximal flatness leads to an ɛ-bandwidth that scales poorly with length and a residual that is easily overwhelmed by unaccounted sources of noise. We advance the paradigm of equiripple compensated gates that directly optimize for bandwidth given the limitations imposed by noise of magnitude δ, leading to dramatically improved performance. Where ɛ represent amplitude errors, we provide a formalism that generalizes both approaches and is effective at finding such gates. With it, we provide in closed-form the phase angles for an optimal family of population inversion gates with an ɛ -bandwidth of  (logδ-1/L) - a quadratic improvement over optimal maximally flat variants. We also construct optimal NOT gates and discuss extensions to other gates and error models.

  12. An analysis of the sluicing gate in pulmonary blood flow.

    Science.gov (United States)

    Fung, Y C; Zhuang, F Y

    1986-05-01

    For pulmonary blood flow in zone 2 condition, in which the blood pressure in the venule (pven) is lower than the alveolar gas pressure (pA), the blood exiting from the capillary sheet and entering a venule must go through a sluicing gate. The sluicing gate exists because the venule remains patent while the capillaries will collapse when the static pressure of blood falls below the alveolar gas pressure. In the original theory of sheet flow the effect of the tension in the interalveolar septa on the flow through the sluicing gate was ignored. Since the tension multiplied by the curvature of the membrane is equivalent to a lateral pressure tending to open the gate, and since the curvature of the capillary wall is high in the gate region, this effect may be important. The present analysis improves the original theory and demonstrates that the effect of membrane tension is to cause flow to increase when the venous pressure continues to decrease. The shape of the sluicing gate resembles that of a venturi tube, and can be determined by an iterative integration of the differential equations. The result forms an important link in the theory of pulmonary blood flow in zone 2 condition.

  13. Local Gate Control in Carbon Nanotube Quantum Devices

    Science.gov (United States)

    Biercuk, Michael

    2005-03-01

    Carbon nanotubes exhibit many properties which make them ideal candidates for applications in coherent electronic devices for quantum computation.We have made significant technological advancements in device fabrication,for the creation of multiple spatially localized electrostatic gates on a single nanotube device. These advancements permit a previously unattainable level of device control in the quantum regime, essential forelectronic logic operations. Our measurements have demonstrated independent gate control in nanotube double quantum dots defined by naturally occurring tunnel barriers [1], as well as the controllable formation of intratube quantum point contacts [2]. In these devices conductance quantization is evident in units of e2/h, suggesting that both band and spin degeneracies may be lifted at zero magnetic field. Local gating has also permitted the fabrication of fully gate-defined intratube quantum dots with gate-tunable tunnel barriers. Multiple quantum dots with independent control over charge number and tunneling rates have been demonstrated [3], raising the functionality of carbon nanotube devices to match that of standard semiconductor heterostructures. New devices incorporating integrated RF-SETs, and microwave studies of gate-defined intratube quantum dots will be discussed.[1] Science 303 p.655, 20042] PRL in press, cond-mat/04066523] To be published

  14. Cradle-to-gate life cycle inventory of vancomycin hydrochloride.

    Science.gov (United States)

    Ponder, Celia; Overcash, Michael

    2010-02-15

    A life cycle analysis on the cradle-to-gate production of vancomycin hydrochloride, which begins at natural resource extraction and spans through factory (gate) production, not only shows all inputs, outputs, and energy usage to manufacture the product and all related supply chain chemicals, but can highlight where process changes would have the greatest impact on raw material and energy consumption and emissions. Vancomycin hydrochloride is produced by a low-yield fermentation process that accounts for 47% of the total cradle-to-gate energy. The fermentation step consumes the most raw materials and energy cradle-to-gate. Over 75% of the total cradle-to-gate energy consumption is due to steam use; sterilization within fermentation is the largest user of steam. Aeration and agitation in the fermentation vessels use 65% of the cradle-to-gate electrical energy. To reduce raw materials, energy consumption, and the associated environmental footprint of producing vancomycin hydrochloride, other sterilization methods, fermentation media, nutrient sources, or synthetic manufacture should be investigated. The reported vancomycin hydrochloride life cycle inventory is a part of a larger life cycle study of the environmental consequences of the introduction of biocide-coated medical textiles for the prevention of MRSA (methicillin-resistant Staphylococcus aureus) nosocomial infections.

  15. MoS2 based dual input logic AND gate

    Science.gov (United States)

    Martinez, Luis M.; Pinto, Nicholas J.; Naylor, Carl H.; Johnson, A. T. Charlie

    2016-12-01

    Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ˜ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials.

  16. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

    Science.gov (United States)

    Ali, Ghusoon M.

    2017-02-01

    An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pH-sensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 μA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

  17. The curvHDR method for gating flow cytometry samples

    Directory of Open Access Journals (Sweden)

    Wand Matthew P

    2010-01-01

    Full Text Available Abstract Background High-throughput flow cytometry experiments produce hundreds of large multivariate samples of cellular characteristics. These samples require specialized processing to obtain clinically meaningful measurements. A major component of this processing is a form of cell subsetting known as gating. Manual gating is time-consuming and subjective. Good automatic and semi-automatic gating algorithms are very beneficial to high-throughput flow cytometry. Results We develop a statistical procedure, named curvHDR, for automatic and semi-automatic gating. The method combines the notions of significant high negative curvature regions and highest density regions and has the ability to adapt well to human-perceived gates. The underlying principles apply to dimension of arbitrary size, although we focus on dimensions up to three. Accompanying software, compatible with contemporary flow cytometry infor-matics, is developed. Conclusion The method is seen to adapt well to nuances in the data and, to a reasonable extent, match human perception of useful gates. It offers big savings in human labour when processing high-throughput flow cytometry data whilst retaining a good degree of efficacy.

  18. Gate tunable graphene-silicon Ohmic/Schottky contacts

    Science.gov (United States)

    Chen, Chun-Chung; Chang, Chia-Chi; Li, Zhen; Levi, A. F. J.; Cronin, Stephen B.

    2012-11-01

    We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate. Under zero applied gate voltage, we observe rectifying I-V characteristics, demonstrating the formation of a Schottky junction at the graphene-silicon interface. Through appropriate gating, the Fermi energy of the graphene can be varied to match the conduction or valence band of silicon, thus forming Ohmic contacts with both n- and p-type silicon. Over the applied gate voltage range, the low bias conductance can be varied by more than three orders of magnitude. By varying the top gate voltage from -4 to +4 V, the Fermi energy of the graphene is shifted between -3.78 and -5.47 eV; a shift of ±0.85 eV from the charge neutrality point. Since the conduction and valence bands of the underlying silicon substrate lie within this range, at -4.01 and -5.13 eV, the Schottky barrier height and depletion width can be decreased to zero for both n- and p-type silicon under the appropriate top gating conditions. I-V characteristics taken under illumination show that the photo-induced current can be increased or decreased based on the graphene-silicon work function difference.

  19. Self-gated cardiac cine imaging using phase information.

    Science.gov (United States)

    Seo, Hyunseok; Kim, Dongchan; Oh, Changheun; Park, HyunWook

    2017-03-01

    To obtain multiphase cardiac cine images with high resolution, a novel self-gating method for both cardiac and respiratory motions is proposed. The proposed method uses the phase of projection data obtained from a separate axial slice to measure cardiac and respiratory motion, after the acquisition of every k-space line in the image plane. Cardiac motion is estimated from the phase of the projection data passing through the aorta, which is amplified by superior-inferior directional bipolar gradients, whereas respiratory motion is estimated from the phase of the left-right directional projection data of the abdomen. To verify the proposed self-gating method, a simulation and in vivo steady state free precession cardiac imaging were performed. The proposed method provides high resolution multiphase cardiac cine images. Using the proposed self-gating method, the phase variation of the projection data offers information about cardiac and respiratory motions that is equivalent to external gating devices. The proposed method can capture time-resolved cardiac and respiratory motion from the phase information of the projection data. Because the projection data is obtained from a separate gating slice, the self-gating signals are not affected by imaging planes. Magn Reson Med 77:1216-1222, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

  20. Parasitic capacitance characteristics of deep submicrometre grooved gate MOSFETs

    Science.gov (United States)

    Sreelal, S.; Lau, C. K.; Samudra, G. S.

    2002-03-01

    Grooved gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are known to alleviate many of the short channel and hot carrier effects that arise when MOSFET devices are scaled down to very short channel lengths. However, they exhibit much higher parasitic capacitance with stronger bias dependence when compared to conventional planar devices. In this paper, we present a model for gate-to-drain and gate-to-source capacitance characteristics of a deep submicrometre grooved gate MOSFET. Both the intrinsic and extrinsic parts of the capacitance are modelled separately. In particular, the model presents a novel but simple way to account for the accumulation layer formation in the source/drain region of MOSFETs due to the application of the gate voltage. The results are compared with those obtained from a two-dimensional device simulator. The close match between the modelled and simulated data establishes the validity of the model. The model is then used to account for the superiority of capacitance characteristics of planar device structures and to arrive at optimization guidelines for grooved gate devices to match these characteristics.

  1. Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

    Institute of Scientific and Technical Information of China (English)

    Xinhua Zhu; Jianmin Zhu; Aidong Li; Zhiguo Liu; Naiben Ming

    2009-01-01

    The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability.In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology.Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties.It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling.In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices.Therefore, detailed atomicscale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks,are highly required.In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed.Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular darkfield (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric

  2. The Position of the Fast-Inactivation Gate during Lidocaine Block of Voltage-gated Na+ Channels

    OpenAIRE

    Vedantham, Vasanth; Cannon, Stephen C.

    1999-01-01

    Lidocaine produces voltage- and use-dependent inhibition of voltage-gated Na+ channels through preferential binding to channel conformations that are normally populated at depolarized potentials and by slowing the rate of Na+ channel repriming after depolarizations. It has been proposed that the fast-inactivation mechanism plays a crucial role in these processes. However, the precise role of fast inactivation in lidocaine action has been difficult to probe because gating of drug-bound channel...

  3. Implementation of a two-qubit controlled-U gate based on unconventional geometric phase with a constant gating time

    CERN Document Server

    Yabu-uti, Bruno F C

    2011-01-01

    We propose an alternative scheme to implement a two-qubits Controlled-U gate in the hybrid system atom-$CCA$ (coupled cavities array). Our scheme results in a constant gating time and, with an adjustable qubit-bus coupling (atom-resonator), one can specify a particular transformation $U$ on the target qubit. We believe that this proposal may open promising perspectives for networking quantum information processors and implementing distributed and scalable quantum computation.

  4. Relationships between sensory "gating out" and sensory "gating in" of auditory evoked potentials in schizophrenia: a pilot study.

    Science.gov (United States)

    Gjini, Klevest; Arfken, Cynthia; Boutros, Nash N

    2010-08-01

    The interrelationship between the ability to inhibit incoming redundant input (gating out) and the ability of the brain to respond when the stimulus changes (gating in), has not been extensively examined. We administered a battery of auditory evoked potential tests to a group of chronic, medicated schizophrenia patients (N=12) and a group of healthy subjects (N=12) in order to examine relationships between "gating out" measures (suppression with repetition of the P50, N100, and P200 evoked responses), and the mismatch negativity (MMN) and the P300 event related potentials as measures of "gating in". Gating ratios for N100 and P200 in a visual attention paired-click task differed significantly between groups. Mismatch negativity and P300 potential amplitudes were also significantly reduced in the patient group. When including all subjects (N=24) a negative correlation was found between the P50 gating and the amplitude of the MMN. In healthy subjects this correlation was significantly stronger compared to schizophrenia patients. While no significant correlation was noted between the amplitudes of the P300 and any gating measures when all 24 subjects were included, a significant negative correlation was seen between the P200 gating and the P300 amplitudes in schizophrenia patients; an opposite trend was noted in healthy subjects. Finally, a positive correlation was seen between the P300 and MMN (to abstract deviance) amplitudes in healthy subjects, but the opposite was found in patients. These results suggest that further study of these interrelationships could inform the understanding of information processing abnormalities in schizophrenia. Copyright 2010 Elsevier B.V. All rights reserved.

  5. Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET

    Institute of Scientific and Technical Information of China (English)

    Ashwani K.Rana; Narottam Chand; Vinod Kapoor

    2011-01-01

    A novel nanoscale MOSFET with a source/drain-to-gate non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first time.The gate leakage behaviour of the novel MOSFET structure has been investigated with the help of a compact analytical model and Sentaurus simulation.A fringing gate electric field through the dielectric spacer induces an inversion layer in the non-overlap region to act as an extended S/D (source/drain) region.It is found that an optimal source/drain-to-gate non-overlapped and high-k spacer structure has reduced the gate leakage current to a great extent as compared to those of an overlapped structure.Further,the proposed structure had improved off current,subthreshold slope and drain induced barrier lowering (DIBL) characteristics.It is concluded that this structure solves the problem of high leakage current without introducing extra series resistance.

  6. Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

    NARCIS (Netherlands)

    Gholamrezaie, F.; Asadi, K.; Kicken, R.A.H.J.; Langeveld-Voss, B.M.W.; Leeuw, D.M. de; Blom, P.W.M.

    2011-01-01

    We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface o

  7. Gate Current and Oxide Reliability in p+ Poly MOS Capacitors with Poly-Si and Poly-Ge0.3 Si0.7 Gate Material

    NARCIS (Netherlands)

    Salm, C.; Klootwijk, J.H.; Ponomarev, Y.; Boos, P.W.M.; Gravesteijn, D.J.; Woerlee, P.H.

    1998-01-01

    Fowler-Nordheim (FN) tunnel current and oxide reliability of PRiLOS capacitors with a p+ polycrystalline silicon (poly-Si) and polycrystalline germanium-silicon (poly-Ge0.3Si0.7 ) gate on 5.6-nm thick gate oxides have been compared. It is shown that the FN current depends on the gate material and th

  8. Reliability analysis for determining performance of barrage based on gates operation

    Science.gov (United States)

    Adiningrum, C.; Hadihardaja, I. K.

    2017-06-01

    Some rivers located on a flat slope topography such as Cilemahabang river and Ciherang river in Cilemahabang watershed, Bekasi regency, West Java are susceptible to flooding. The inundation mostly happens near a barrage in the middle and downstream of the Cilemahabang watershed, namely the Cilemahabang and Caringin barrages. Barrages or gated weirs are difficult to exploit since the gate must be kept and operated properly under any circumstances. Therefore, a reliability analysis of the gates operation is necessary to determine the performance of the barrage with respect to the number of gates opened and the gates opening heights. The First Order Second Moment (FOSM) method was used to determine the performance by the reliability index (β) and the probability of failure (risk). It was found that for Cilemahabang Barrage, the number of gates opened with load (L) represents the peak discharge derived from various rainfall (P) respectively one gate with opening height (h=1m) for Preal, two gates (h=1m and h=1,5m) for P50, and three gates (each gate with h=2,5m) for P100. For Caringin Barrage, the results are minimum three gates opened (each gate with h=2,5 m) for Preal, five gates opened (each gate with h=2,5m) for P50, and six gates opened (each gate with h=2,5m) for P100. It can be concluded that a greater load (L) needs greater resistance (R) to counterbalance. Resistance can be added by increasing the number of gates opened and the gate opening height. A higher number of gates opened will lead to the decrease of water level in the upstream of barrage and less risk of overflow.

  9. Reduced energy consumption by using streamlined gating systems

    Institute of Scientific and Technical Information of China (English)

    Seren Skov-Hansen; Niels Skat Tiedje

    2008-01-01

    In foundries a lot of effort is done to minimize energy consumption in the production to reduce costs and hence increase the competitiveness. At the same time the foundries must live up to the increased demands for high quality castings.Traditional gating systems are known for a straight tapered down runner, a well base and 90° bends in the runner system. Previous work has shown that the traditional way of designing gating systems creates high inconsistency in flow patterns during filling. In the streamlined gating systems there are no sharp changes in direction and a large effort is done to confine and control the flow of the molten metal during mould filling. The main objective in the work presented here is to use the principles of the streamlined gating systems to reduce the weight of the gating system relative to the traditional layouts. By reducing the weight of gating system and thereby improving yield, the amount of molten iron needed is also reduced, hence reducing the energy consumption for melting.Experiments in real production lines have proven that it is possible to achieve a reduction in the poured weight by using the streamlined gating systems. In a layout for casting of three valve housings in a vertically parted mould the weight of the gating system was reduced by 1.1 kg changing from the traditional layouts to the streamlined gating systems. This weight reduction corresponds in this case to a 20% weight reduction for the gating system. Using streamlined gating systems with fan gates to give a beneficial heat distribution in the castings may be an efficient tool to eliminate the need for heat treatment. In the experiments the change in gating system from the traditional layout to the streamlined layout removed the need for heat treatment. This obviously means a huge energy saving in the foundry. The energy consumption for heat treatment of iron has been found to be 0.489 kWh/kg. The valve housing in the experiments weighs 3 kg so when the need for

  10. Free-surface flow simulations for discharge-based operation of hydraulic structure gates

    CERN Document Server

    Erdbrink, C D; Sloot, P M A

    2014-01-01

    We combine non-hydrostatic flow simulations of the free surface with a discharge model based on elementary gate flow equations for decision support in operation of hydraulic structure gates. A water level-based gate control used in most of today's general practice does not take into account the fact that gate operation scenarios producing similar total discharged volumes and similar water levels may have different local flow characteristics. Accurate and timely prediction of local flow conditions around hydraulic gates is important for several aspects of structure management: ecology, scour, flow-induced gate vibrations and waterway navigation. The modelling approach is described and tested for a multi-gate sluice structure regulating discharge from a river to the sea. The number of opened gates is varied and the discharge is stabilized with automated control by varying gate openings. The free-surface model was validated for discharge showing a correlation coefficient of 0.994 compared to experimental data. A...

  11. A Novel Design of Half Subtractor using Reversible Feynman Gate in Quantum Dot cellular Automata

    Directory of Open Access Journals (Sweden)

    Rubina Akter

    2014-12-01

    Full Text Available Quantum Dot cellular Automata (QCA is an emerging, promising alternative to CMOS technology that performs its task by encoding binary information on electronic charge configuration of a cell. All circuit based on QCA has an advantages of high speed, high parallel processing, high integrityand low power consumption. Reversible logic gates are the leading part in Quantum Dot cellular Automata. Reversible logic gates have an extensive feature that does not lose information. In this paper, we present a novel architecture of half subtractor gate design by reversible Feynman gate. This circuit is designedbased on QCA logic gates such as QCA majority voter gate, majority AND gate, majority OR gate and inverter gate. This circuit will provide an effective working efficiency on computational units of the digital circuit system.

  12. Gates Wide Shut. Un’ipotesi comparatistica per lo studio delle gated communities

    Directory of Open Access Journals (Sweden)

    Andrea Chiurato

    2014-10-01

    Full Text Available Il contributo indaga in una prospettiva comparatistica l’emergenza e l’evoluzione dell’immagine della “comunità fortificata” (gated community, con una particolare attenzione alla sua declinazione all’interno del genere romanzesco (I. Levin; J. G. Ballard; C. Piñeiro. Nato e sviluppatosi all’interno dell’immaginario anglosassone, tale paradigma postmetropolitano sembra infatti aver attecchito con successo in altri contesti storico-geografici, adattandosi plasticamente all’evoluzione del “discorso” della globalizzazione: dall’affermarsi delle retoriche del libero mercato tra gli anni Ottanta e Novanta; al risorgere delle ragioni della sicurezza e del territorio in coincidenza con l’inizio del nuovo millennio; per arrivare, infine, ai tempi più recenti della crisi economica. Lo scopo dell’analisi sarà quello di dimostrare in che misura questo “motivo” sia stato utilizzato per drammatizzare e tematizzare alcuni aspetti della correlazione tra le due dimensioni della world literature (il locale e il globale tra cui: il controllo e la gestione del movimento di merci e persone attraverso la pianificazione urbana; la ridefinizione delle tradizionali opposizioni topologiche ereditate dalla modernità (dentro/fuori, centro/periferia; la creazione di zone ibride, di nuovi paradigmi di appartenenza ed esclusione e di nuove “comunità immaginate”.The aim of the paper is to analyse, in a comparative perspective, the emergence and the evolution of the gated community’s image within the novels of the last four decades (I. Levin; J. G. Ballard; C. Piñeiro. Born and grown within the Anglo-Saxon imagery, the gated community paradigm seems to have spread in different historical and geographical contexts, adapting itself to the different phases of the globalization “discourse”: from the rise of neoliberal rhetoric between the Eighties and the Nineties, through the reemergence of the problems connected to security control

  13. Respiratory gated irradiation system for heavy-ion radiotherapy.

    Science.gov (United States)

    Minohara, S; Kanai, T; Endo, M; Noda, K; Kanazawa, M

    2000-07-01

    In order to reduce the treatment margin of the moving target due to breathing, we developed a gated irradiation system for heavy-ion radiotherapy. The motion of a patient due to respiration is detected by the motion of the body surface around the chest wall. A respiratory sensor was developed using an infrared light spot and a position-sensitive detector. A timing signal to request a beam is generated in response to the respiration waveform, and a carbon beam is extracted from the synchrotron using a RF-knockout method. CT images for treatment planning are taken in synchronization with the respiratory motion. For patient positioning, digitized fluoroscopic images superimposed with the respiration waveform were used. The relation between the respiratory sensor signal and the organ motion was examined using digitized video images from fluoroscopy. The performance of our gated system was demonstrated by using the moving phantom, and dose profiles were measured in the direction of phantom motion. The timing of gate-on is set at the end of the expiratory phase, because the motion of the diaphragm is slower and more reproducible than during the inspiratory phase. The signal of the respiratory sensor shows a phase difference of 120 milliseconds between lower and upper locations on the chest wall. The motion of diaphragm is delayed by 200 milliseconds from the respiration waveform at the lower location. The beam extraction system worked according to the beam on/off logic for gating, and the gated CT scanner performed well. The lateral penumbra size of the dose profile along the moving axis was distinguishably decreased by the gated irradiation. The ratio of the nongated to gated lateral fall-off was 4.3, 3.5, and 2. 0 under the stroke of 40.0, 29.0, and 13.0 mm respectively. We developed a total treatment system of gated irradiation for heavy-ion radiotherapy. We found that with this system the target margin along the body axis could be decreased to 5-10 mm although the

  14. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

    Science.gov (United States)

    2010-01-01

    Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/ GaN HEMTs David J. Meyer *, Robert Bass, D...concept metal–insulator–semiconductor (MIS) AlGaN/ GaN high-electron mobility transistor ( HEMT ) that uses a self-aligned 10 nm AlOx gate insulator and...Au gate metal layers to fabri- cate submicron insulated T-gates for AlGaN/ GaN high-electron mobility transistors ( HEMTs ). Metal–insulator

  15. Novel in-plane gate devices on hydrogenated diamond surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Garrido, J.A.; Nebel, C.E.; Todt, R.; Amann, M.C.; Stutzmann, M. [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, 85748 Garching (Germany); Williams, O.A.; Jackman, R. [Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E7JE (United Kingdom); Nesladek, M. [Limburgs Universitair Centrum, Institute for Materials Research, Wetenschapspark 1, 3590 Diepenbeek (Belgium)

    2003-09-01

    Hydrogen-terminated diamond surfaces are very attractive for devices based on surface electronics. The hole channel that governs the surface conductivity and the simplicity of the surface patterning are key features which allow a large flexibility for device design. In-plane gate field effect transistors have been fabricated with the conductive channel separated from the ohmic gate contacts by insulating thin lines, obtained by using a combination of electron beam lithography with surface oxidation. Depletion regions spreading from the highly resistive oxidized lines which separate the channel and gate regions can be controlled by applying a voltage to both lateral gate contacts. A wire structure has been designed in such a way that the gate voltage effectively modulates the conductance of the channel. The channel modulation is discussed in terms of a quasi two-dimensional surface carrier density. The effect of surface defects on the transistor properties has also been investigated. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Desensitization mechanism in prokaryotic ligand-gated ion channel.

    Science.gov (United States)

    Velisetty, Phanindra; Chakrapani, Sudha

    2012-05-25

    Crystal structures of Gloeobacter violaceus ligand-gated ion channel (GLIC), a proton-gated prokaryotic homologue of pentameric ligand-gated ion channel (LGIC) from G. violaceus, have provided high-resolution models of the channel architecture and its role in selective ion conduction and drug binding. However, it is still unclear which functional states of the LGIC gating scheme these crystal structures represent. Much of this uncertainty arises from a lack of thorough understanding of the functional properties of these prokaryotic channels. To elucidate the molecular events that constitute gating, we have carried out an extensive characterization of GLIC function and dynamics in reconstituted proteoliposomes by patch clamp measurements and EPR spectroscopy. We find that GLIC channels show rapid activation upon jumps to acidic pH followed by a time-dependent loss of conductance because of desensitization. GLIC desensitization is strongly coupled to activation and is modulated by voltage, permeant ions, pore-blocking drugs, and membrane cholesterol. Many of these properties are parallel to functions observed in members of eukaryotic LGIC. Conformational changes in loop C, measured by site-directed spin labeling and EPR spectroscopy, reveal immobilization during desensitization analogous to changes in LGIC and acetylcholine binding protein. Together, our studies suggest conservation of mechanistic aspects of desensitization among LGICs of prokaryotic and eukaryotic origin.

  17. Effects of fractal gating of potassium channels on neuronal behaviours

    Science.gov (United States)

    Zhao, De-Jiang; Zeng, Shang-You; Zhang, Zheng-Zhen

    2010-10-01

    The classical model of voltage-gated ion channels assumes that according to a Markov process ion channels switch among a small number of states without memory, but a bunch of experimental papers show that some ion channels exhibit significant memory effects, and this memory effects can take the form of kinetic rate constant that is fractal. Obviously the gating character of ion channels will affect generation and propagation of action potentials, furthermore, affect generation, coding and propagation of neural information. However, there is little previous research on this series of interesting issues. This paper investigates effects of fractal gating of potassium channel subunits switching from closed state to open state on neuronal behaviours. The obtained results show that fractal gating of potassium channel subunits switching from closed state to open state has important effects on neuronal behaviours, increases excitability, rest potential and spiking frequency of the neuronal membrane, and decreases threshold voltage and threshold injected current of the neuronal membrane. So fractal gating of potassium channel subunits switching from closed state to open state can improve the sensitivity of the neuronal membrane, and enlarge the encoded strength of neural information.

  18. Switching terahertz waves with gate-controlled active graphene metamaterials.

    Science.gov (United States)

    Lee, Seung Hoon; Choi, Muhan; Kim, Teun-Teun; Lee, Seungwoo; Liu, Ming; Yin, Xiaobo; Choi, Hong Kyw; Lee, Seung S; Choi, Choon-Gi; Choi, Sung-Yool; Zhang, Xiang; Min, Bumki

    2012-11-01

    The extraordinary electronic properties of graphene provided the main thrusts for the rapid advance of graphene electronics. In photonics, the gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of photons with graphene, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpatterned graphene alone is still not strong enough for practical optoelectronic applications owing to its non-resonant Drude-like behaviour. Here, we demonstrate that substantial gate-induced persistent switching and linear modulation of terahertz waves can be achieved in a two-dimensional metamaterial, into which an atomically thin, gated two-dimensional graphene layer is integrated. The gate-controllable light-matter interaction in the graphene layer can be greatly enhanced by the strong resonances of the metamaterial. Although the thickness of the embedded single-layer graphene is more than six orders of magnitude smaller than the wavelength (metamaterial, can modulate both the amplitude of the transmitted wave by up to 47% and its phase by 32.2° at room temperature. More interestingly, the gate-controlled active graphene metamaterials show hysteretic behaviour in the transmission of terahertz waves, which is indicative of persistent photonic memory effects.

  19. Voltage-gated proton channel is expressed on phagosomes.

    Science.gov (United States)

    Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

    2009-05-01

    Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

  20. Transparent conducting oxide induced by liquid electrolyte gating

    Science.gov (United States)

    ViolBarbosa, Carlos; Karel, Julie; Kiss, Janos; Gordan, Ovidiu-dorin; Altendorf, Simone G.; Utsumi, Yuki; Samant, Mahesh G.; Wu, Yu-Han; Tsuei, Ku-Ding; Felser, Claudia; Parkin, Stuart S. P.

    2016-10-01

    Optically transparent conducting materials are essential in modern technology. These materials are used as electrodes in displays, photovoltaic cells, and touchscreens; they are also used in energy-conserving windows to reflect the infrared spectrum. The most ubiquitous transparent conducting material is tin-doped indium oxide (ITO), a wide-gap oxide whose conductivity is ascribed to n-type chemical doping. Recently, it has been shown that ionic liquid gating can induce a reversible, nonvolatile metallic phase in initially insulating films of WO3. Here, we use hard X-ray photoelectron spectroscopy and spectroscopic ellipsometry to show that the metallic phase produced by the electrolyte gating does not result from a significant change in the bandgap but rather originates from new in-gap states. These states produce strong absorption below ˜1 eV, outside the visible spectrum, consistent with the formation of a narrow electronic conduction band. Thus WO3 is metallic but remains colorless, unlike other methods to realize tunable electrical conductivity in this material. Core-level photoemission spectra show that the gating reversibly modifies the atomic coordination of W and O atoms without a substantial change of the stoichiometry; we propose a simple model relating these structural changes to the modifications in the electronic structure. Thus we show that ionic liquid gating can tune the conductivity over orders of magnitude while maintaining transparency in the visible range, suggesting the use of ionic liquid gating for many applications.

  1. Synchronous pulsing plasma utilization in dummy poly gate removal process

    Science.gov (United States)

    Huang, Ruixuan; Meng, Xiao-Ying; Han, Qiu-Hua; Zhang, Hai-Yang

    2015-03-01

    When CMOS technology reaches 28/20nm node and beyond, several new schemes are implemented such as High K metal gate (HKMG) which can enhance the device performance and has better control of device current leakage. Dummy poly gate removal (DPGR) process is introduced for HKMG, and works as a key process to control the work function of metal gate and threshold voltage (Vt) shift. In dry etch technology, conventional continuous wave (CW) plasma process has been widely used, however, it may not be capable for some challenging process in 28nm node and beyond. In DPGR process for HKMG scheme, CW scheme may result in plasma damage of gate oxide/capping layer for its inherent high electron temperature (Te) and ion energy while synchronous pulsing scheme is capable to simultaneously pulse both source and bias power, which could achieve lower Te, independent control of ion and radical flux, well control the loading of polymer deposition on dense/ isolate features. It's the first attempt to utilize synchronous pulsing plasma in DPGR process. Experiment results indicate that synchronous pulsing could provide less silicon recess under thin gate oxide which is induced by the plasma oxidation. Furthermore, the loading of HK capping layer loss between long channel and short channel can be well controlled which plays a key role on transistor performance, such as leakage and threshold voltage shift. Additionally, it has been found that synchronous pulsing could distinctly improve ILD loss when compared with CW, which is helpful to broaden the whole process window.

  2. Use of the GATE Monte Carlo package for dosimetry applications

    Energy Technology Data Exchange (ETDEWEB)

    Visvikis, D. [INSERM U650, LaTIM, University Hospital Medical School, F 29609 Brest (France)]. E-mail: Visvikis.Dimitris@univ-brest.fr; Bardies, M. [INSERM U601, CHU Nantes, F 44093 Nantes (France); Chiavassa, S. [INSERM U601, CHU Nantes, F 44093 Nantes (France); Danford, C. [Department of Medical Physics, MSKCC, New York (United States); Kirov, A. [Department of Medical Physics, MSKCC, New York (United States); Lamare, F. [INSERM U650, LaTIM, University Hospital Medical School, F 29609 Brest (France); Maigne, L. [Departement de Curietherapie-Radiotherapie, Centre Jean Perrin, F 63000 Clemont-Ferrand (France); Staelens, S. [UGent-ELIS, St-Pietersnieuwstraat, 41, B 9000 Gent (Belgium); Taschereau, R. [CRUMP Institute for Molecular Imaging, UCLA, Los Angeles (United States)

    2006-12-20

    One of the roles for Monte Carlo (MC) simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP, EGSnrc and PTRAN. However, such codes do not easily facilitate the description of complicated 3D sources or emission tomography systems and associated data flow, which may be useful in different dosimetry application domains. Such problems can be overcome by the use of specific MC codes such as GATE (GEANT4 Application to Tomographic Emission), which is based on Geant4 libraries, providing a scripting interface with a number of advantages for the simulation of SPECT and PET systems. Despite this potential, its major disadvantage is in terms of efficiency involving long execution times for applications such as dosimetry. The strong points and disadvantages of GATE in comparison to other dosimetry specific codes are discussed and illustrated in terms of accuracy, efficiency and flexibility. A number of features, such as the use of voxelised and moving sources, as well as developments such as advanced visualization tools and the development of dose estimation maps allowing GATE to be used for dosimetry applications are presented. In addition, different examples from dosimetry applications with GATE are given. Finally, future directions with respect to the use of GATE for dosimetry applications are outlined.

  3. Pressure locking and thermal binding of gate valves

    Energy Technology Data Exchange (ETDEWEB)

    Kelly, E.M.

    1996-12-01

    Pressure locking and thermal binding represent potential common mode failure mechanisms that can cause safety-related power-operated gate valves to fail in the closed position, thus rendering redundant safety-related systems incapable of performing their safety functions. Supplement 6 to Generic Letter 89-10, {open_quotes}Safety-Related Motor-Operated Gate Valve Testing and Surveillance,{close_quotes} provided an acceptable approach to addressing pressure locking and thermal binding of gate valves. More recently, the NRC has issued Generic Letter 95-07, {open_quotes}Pressure Locking and Thermal Binding of Safety-Related Power-Operated Gate Valves,{close_quotes} to request that licensees take certain actions to ensure that safety-related power-operated gate valves that are susceptible to pressure locking or thermal binding are capable of performing their safety functions within the current licensing bases. Over the past two years, several plants in Region I determined that valves in certain systems were potentially susceptible to pressure locking and thermal binding, and have taken various corrective actions. The NRC Region I Systems Engineering Branch has been actively involved in the inspection of licensee actions in response to the pressure locking and thermal binding issue. Region I continues to maintain an active involvement in this area, including participation with the Office of Nuclear Reactor Regulation in reviewing licensee responses to Generic Letter 95-07.

  4. How voltage-gated calcium channels gate forms of homeostatic synaptic plasticity

    Directory of Open Access Journals (Sweden)

    C. Andrew eFrank

    2014-02-01

    Full Text Available Throughout life, animals face a variety of challenges such as developmental growth, the presence of toxins, or changes in temperature. Neuronal circuits and synapses respond to challenges by executing an array of neuroplasticity paradigms. Some paradigms allow neurons to up- or downregulate activity outputs, while countervailing ones ensure that outputs remain within appropriate physiological ranges. A growing body of evidence suggests that homeostatic synaptic plasticity (HSP is critical in the latter case. Voltage-gated calcium channels gate forms of HSP. Presynaptically, the aggregate data show that when synapse activity is weakened, homeostatic signaling systems can act to correct impairments, in part by increasing calcium influx through presynaptic CaV2-type channels. Increased calcium influx is often accompanied by parallel increases in the size of active zones and the size of the readily releasable pool of presynaptic vesicles. These changes coincide with homeostatic enhancements of neurotransmitter release. Postsynaptically, there is a great deal of evidence that reduced network activity and loss of calcium influx through CaV1-type calcium channels also results in adaptive homeostatic signaling. Some adaptations drive presynaptic enhancements of vesicle pool size and turnover rate via retrograde signaling, as well as de novo insertion of postsynaptic neurotransmitter receptors. Enhanced calcium influx through CaV1 after network activation or single cell stimulation can elicit the opposite response – homeostatic depression via removal of excitatory receptors.There exist intriguing links between HSP and calcium channelopathies – such as forms of epilepsy, migraine, ataxia, and myasthenia. The episodic nature of some of these disorders suggests alternating periods of stable and unstable function. Uncovering information about how calcium channels are regulated in the context of HSP could be relevant toward understanding these and other

  5. Organic nano-floating-gate transistor memory with metal nanoparticles

    Science.gov (United States)

    Van Tho, Luu; Baeg, Kang-Jun; Noh, Yong-Young

    2016-04-01

    Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.

  6. Robustness against parametric noise of non ideal holonomic gates

    CERN Document Server

    Lupo, C; Florio, G; Napolitano, M; Aniello, Paolo; Florio, Giuseppe; Lupo, Cosmo; Napolitano, Mario

    2006-01-01

    Holonomic gates for quantum computation are commonly considered to be robust against certain kinds of parametric noise, the very motivation for this robustness being the geometric character of the transformation achieved in the adiabatic limit. On the other hand, the effects of decoherence are expected to become more and more relevant when the adiabatic limit is approached. Starting from the system described by Florio et al. [Phys. Rev. A 73, 022327 (2006)], here we discuss the behavior of non ideal holonomic gates at finite operational time, i.e., far before the adiabatic limit is reached. We have considered several models of parametric noise and studied the robustness of finite time gates. The main result is that the issue of robustness is problematic and may strongly depend on some features of the noise such as its symmetries and typical frequencies.

  7. Gate-Keeping in the Age of Information Society

    DEFF Research Database (Denmark)

    Andersen, Kim Normann; Zinner Henriksen, Helle; Medaglia, Rony

    Despite ten years of direct regulation, our study of Danish lower secondary schools shows that they do not provide online access to the GPA for individual public schools (N=1,592). Using Lipsky’s gate-keeping theory, we investigate the lack of data provision as indicator not only of professionals...... in the age of information society where expectations of end-of-gatekeeping by providing accessibility and transparency using information systems has been outnumbered by classical forces of gate-keeping.......’ being reluctant to accept imposed standards and control from central level (top-down) but also avoiding demands from parents (and children) on transparency and accountability (bottom-up). The lack of accessibility of grades on the web can thus be seen as a classical gate-keeping mechanism evolving...

  8. Electrolyte-Gated Graphene Ambipolar Frequency Multipliers for Biochemical Sensing.

    Science.gov (United States)

    Fu, Wangyang; Feng, Lingyan; Mayer, Dirk; Panaitov, Gregory; Kireev, Dmitry; Offenhäusser, Andreas; Krause, Hans-Joachim

    2016-04-13

    In this Letter, the ambipolar properties of an electrolyte-gated graphene field-effect transistor (GFET) have been explored to fabricate frequency-doubling biochemical sensor devices. By biasing the ambipolar GFETs in a common-source configuration, an input sinusoidal voltage at frequency f applied to the electrolyte gate can be rectified to a sinusoidal wave at frequency 2f at the drain electrode. The extraordinary high carrier mobility of graphene and the strong electrolyte gate coupling provide the graphene ambipolar frequency doubler an unprecedented unity gain, as well as a detection limit of ∼4 pM for 11-mer single strand DNA molecules in 1 mM PBS buffer solution. Combined with an improved drift characteristics and an enhanced low-frequency 1/f noise performance by sampling at doubled frequency, this good detection limit suggests the graphene ambipolar frequency doubler a highly promising biochemical sensing platform.

  9. Cluster state preparation using gates operating at arbitrary success probabilities

    Science.gov (United States)

    Kieling, K.; Gross, D.; Eisert, J.

    2007-06-01

    Several physical architectures allow for measurement-based quantum computing using sequential preparation of cluster states by means of probabilistic quantum gates. In such an approach, the order in which partial resources are combined to form the final cluster state turns out to be crucially important. We determine the influence of this classical decision process on the expected size of the final cluster. Extending earlier work, we consider different quantum gates operating at various probabilites of success. For finite resources, we employ a computer algebra system to obtain the provably optimal classical control strategy and derive symbolic results for the expected final size of the cluster. We identify two regimes: when the success probability of the elementary gates is high, the influence of the classical control strategy is found to be negligible. In that case, other figures of merit become more relevant. In contrast, for small probabilities of success, the choice of an appropriate strategy is crucial.

  10. Entangling quantum gate in trapped ions via Rydberg blockade

    CERN Document Server

    Li, Weibin

    2013-01-01

    We present a theoretical analysis of the implementation of an entangling quantum gate between two trapped Ca$^+$ ions which is based on the dipolar interaction among ionic Rydberg states. In trapped ions the Rydberg excitation dynamics is usually strongly affected by mechanical forces due to the strong couplings between electronic and vibrational degrees of freedom in inhomogeneous electric fields. We demonstrate that this harmful effect can be overcome by using dressed states that emerge from the microwave coupling of nearby Rydberg states. At the same time these dressed states exhibit long range dipolar interactions which we use to implement a controlled adiabatic phase gate. Our study highlights a route towards a trapped ion quantum processor in which quantum gates are realized independently of the vibrational modes.

  11. Gate Set Tomography on a trapped ion qubit

    Science.gov (United States)

    Nielsen, Erik; Blume-Kohout, Robin; Gamble, John; Rundinger, Kenneth; Mizrahi, Jonathan; Sterk, Johathan; Maunz, Peter

    2015-03-01

    We present enhancements to gate-set tomography (GST), which is a framework in which an entire set of quantum logic gates (including preparation and measurement) can be fully characterized without need for pre-calibrated operations. Our new method, ``extended Linear GST'' (eLGST) uses fast, reliable analysis of structured long gate sequences to deliver tomographic precision at the Heisenberg limit with GST's calibration-free framework. We demonstrate this precision on a trapped-ion qubit, and show significant (orders of magnitude) advantage over both standard process tomography and randomized benchmarking. This work was supported by the Laboratory Directed Research and Development (LDRD) program at Sandia National Laboratories. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  12. Flexural-Phonon Scattering Induced by Electrostatic Gating in Graphene

    Science.gov (United States)

    Gunst, Tue; Kaasbjerg, Kristen; Brandbyge, Mads

    2017-01-01

    Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry, yielding a coupling mechanism to the flexural phonons. We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility-limiting factor, and show how the carrier density and temperature scaling of the mobility depends on the electrostatic environment. Our findings may explain the high deformation potential for in-plane acoustic phonons extracted from experiments and, furthermore, suggest a direct relation between device symmetry and resulting mobility.

  13. Identification of spinal circuits transmitting and gating mechanical pain

    Science.gov (United States)

    Bourane, Steeve; Britz, Olivier; Padilla, Christopher; Garcia-Campmany, Lidia; Krashes, Michael; Knowlton, Wendy; Velasquez, Tomoko; Ren, Xiangyu; Ross, Sarah; Lowell, Bradford B.; Wang, Yun; Goulding, Martyn; Ma, Qiufu

    2014-01-01

    SUMMARY Pain processing in the spinal cord has been postulated to rely on nociceptive transmission (T) neurons receiving inputs from nociceptors and Aβ mechanoreceptors, with Aβ inputs gated through feed-forward activation of spinal inhibitory neurons (IN). Here we used intersectional genetic manipulations to identify these critical components of pain transduction. Marking and ablating six populations of spinal excitatory and inhibitory neurons, coupled with behavioral and electrophysiological analysis, showed that excitatory neurons expressing somatostatin (SOM) represent T-type cells, whose ablation causes loss of mechanical pain. Inhibitory neurons marked by the expression of dynorphin (Dyn) represent IN-type neurons, which are necessary to gate Aβ fibers from activating SOM+ neurons to evoke pain. Therefore, peripheral mechanical nociceptors and Aβ mechanoreceptors, together with spinal SOM+ excitatory and Dyn+ inhibitory neurons form a microcircuit that transmits and gates mechanical pain. PMID:25467445

  14. Automatic ticket gate EG-2000; Shingata jido kaisatsuki EG-2000

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    A new type automatic ticket gate was developed with a concept of 'more benign to people'. An illegal train ride is prevented, without impairing convenience of passengers, by enabling plural tickets up to three to be thrown in together; the machine also makes it possible to pay for an extra ridden distance with the combined use of a stored fare card and a train ticket. The gate benign to people was realized also through a soft door operation, information display by color liquid crystal and pictogram, enlarged passage width, etc. In addition, improvement in data processing performance is contrived in view of the introduction of a radio IC card in the future; the gate is supposed to play the central role in the rapid cashless trend of the operating system of a station. (translated by NEDO)

  15. Design of Asynchronous Sequential Circuits using Reversible Logic Gates

    Directory of Open Access Journals (Sweden)

    Bahram Dehghan

    2012-09-01

    Full Text Available In recent literature, Reversible logic has become one of the promising arena in low power dissipating circuit design in the past few years and has found its applications in low power CMOS circuits ,optical information processing and nanotechnology. The reversible circuits form the basic building block of quantum computers as all quantum operations are reversible. This paper presents asynchronoussequential circuits and circuits without hazard effect using reversible logic gates. I illustrate that we can produce AND, OR, NAND, NOR, EXOR and EXNOR outputs in one design using reversible logic gates. Also, I will evaluate the proposed circuits. The results show that reversible logic can be used to design these circuits. In this paper, the number of gates and garbage outputs is considered.

  16. Gain spectrum in gated x-ray MCPs

    Energy Technology Data Exchange (ETDEWEB)

    Kyrala, George A [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Archuleta, Thomas N [Los Alamos National Laboratory; Holder, Joe [LLNL

    2009-01-01

    The gain spectrum in a gated multichannel intensifier output depends on the gain and spatial averaging. The spectrum affects the minimum signal that can be detected as well as the signal to noise in the detected images. We will present data on the gain-spectrum for the GXD detector, a gated x-ray detector to be used at the National Ignition Facility. The data was recorded on a cooled CCD detector, with an x-ray gating time of approximately 75 ps, selected from a range of 0.2 and 1 ns electrical pulse width determined by pulse forming modules were also used. The detector was characterized at the TRIDENT laser facility, using a 2.4 ns long x-ray at 4.75 keV. The x-rays were generated by the interaction of the focused Trident laser beam with a Titanium target.

  17. Dynamic Partitioning of GATE Monte-Carlo Simulations on EGEE

    CERN Document Server

    Camarasu-Pop, S; Benoit-Cattin, Hugues; Glatard, Tristan; Sarrut, David; Camarasu-Pop, Sorina

    2010-01-01

    The EGEE Grid offers the necessary infrastructure and resources for reducing the running time of particle tracking Monte-Carlo applications like GATE. However, efforts are required to achieve reliable and efficient execution and to provide execution frameworks to end-users. This paper presents results obtained with porting the GATE software on the EGEE Grid, our ultimate goal being to provide reliable, user-friendly and fast execution of GATE to radiation therapy researchers. To address these requirements, we propose a new parallelization scheme based on a dynamic partitioning and its implementation in two different frameworks using pilot jobs and workflows. Results show that pilot jobs bring strong improvement w.r.t. regular gLite submission, that the proposed dynamic partitioning algorithm further reduces execution time by a factor of two and that the genericity and user-friendliness offered by the workflow implementation do not introduce significant overhead.

  18. Time reversal and exchange symmetries of unitary gate capacities

    CERN Document Server

    Harrow, A W; Harrow, Aram W.; Shor, Peter W.

    2005-01-01

    Unitary gates are an interesting resource for quantum communication in part because they are always invertible and are intrinsically bidirectional. This paper explores these two symmetries: time-reversal and exchange of Alice and Bob. We will present examples of unitary gates that exhibit dramatic separations between forward and backward capacities (even when the back communication is assisted by free entanglement) and between entanglement-assisted and unassisted capacities, among many others. Along the way, we will give a general time-reversal rule for relating the capacities of a unitary gate and its inverse that will explain why previous attempts at finding asymmetric capacities failed. Finally, we will see how the ability to erase quantum information and destroy entanglement can be a valuable resource for quantum communication.

  19. Azobenzene Modified Polymer Electrolyte Membrane for Ion Gating

    Science.gov (United States)

    Piedrahita, Camilo; Mballa, Mireille; He, Ruixuan; Kyu, Thein

    By virtue of ion concentration gradient across cell membranes, neuron cells are highly polarized driving electrical potential difference (e.g., Gibbs law). To regulate and control ion movement, living cells have specific channels with gates that are permeable to cations, enabling or excluding them via charge polarity and size. This mechanism for generating and transmitting signals from one neuron to another controls body movement via brain function. By virtue of trans-cis isomerization, azobenzene derivative (AZO) has been heavily sought for ion-gating in biological cells as a means of signal generation and transmission through nervous systems. In this work, PEM consisted of PEGDA/SCN/LiTFSI was modified with AZO derivatives for gating of lithium ions. At low concentrations of azobenzene of 3 wt Supported by NSF-DMR 1502543.

  20. Toward error-free scaled spin torque majority gates

    Directory of Open Access Journals (Sweden)

    Adrien Vaysset

    2016-06-01

    Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

  1. Modularity Induced Gating and Delays in Neuronal Networks.

    Science.gov (United States)

    Shein-Idelson, Mark; Cohen, Gilad; Ben-Jacob, Eshel; Hanein, Yael

    2016-04-01

    Neural networks, despite their highly interconnected nature, exhibit distinctly localized and gated activation. Modularity, a distinctive feature of neural networks, has been recently proposed as an important parameter determining the manner by which networks support activity propagation. Here we use an engineered biological model, consisting of engineered rat cortical neurons, to study the role of modular topology in gating the activity between cell populations. We show that pairs of connected modules support conditional propagation (transmitting stronger bursts with higher probability), long delays and propagation asymmetry. Moreover, large modular networks manifest diverse patterns of both local and global activation. Blocking inhibition decreased activity diversity and replaced it with highly consistent transmission patterns. By independently controlling modularity and disinhibition, experimentally and in a model, we pose that modular topology is an important parameter affecting activation localization and is instrumental for population-level gating by disinhibition.

  2. Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

    CERN Document Server

    Marmon, Jason K; Wang, Kai; Zhou, Weilie; Zhang, Yong

    2016-01-01

    Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore's law to the quantum region without requiring a FET's fabrication complexity, e.g. a physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x10^6 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/de...

  3. Mixed-Species Logic Gates and High-Fidelity Universal Gate Set for Trapped-Ion Qubits

    Science.gov (United States)

    Tan, Ting Rei

    2016-05-01

    Precision control over hybrid physical systems at the quantum level is important for the realization of many quantum-based technologies. For trapped-ions, a hybrid system formed of different species introduces extra degrees of freedom that can be exploited to expand and refine the control of the system. We demonstrate an entangling gate between two atomic ions of different elements that can serve as an important building block of quantum information processing (QIP), quantum networking, precision spectroscopy, metrology, and quantum simulation. An entangling geometric phase gate between a 9 Be+ ion and a 25 Mg+ ion is realized through an effective spin-spin interaction generated by state-dependent forces. A mixed-species Bell state is thereby created with a fidelity of 0 . 979(1) . We use the gate to construct a SWAP gate that interchanges the quantum states of the two dissimilar qubits. We also report a high-fidelity universal gate set for 9 Be+ ion qubits, achieved through a combination of improved laser beam quality and control, improved state preparation, and reduced electric potential noise on trap electrodes. Supported by Office of the Director of National Intelligence (ODNI) Intelligence Advanced Research Projects Activity (IARPA), ONR, and the NIST Quantum Information Program.

  4. The cytoplasmic coiled-coil mediates cooperative gating temperature sensitivity in the voltage-gated H(+) channel Hv1.

    Science.gov (United States)

    Fujiwara, Yuichiro; Kurokawa, Tatsuki; Takeshita, Kohei; Kobayashi, Megumi; Okochi, Yoshifumi; Nakagawa, Atsushi; Okamura, Yasushi

    2012-05-08

    Hv1/VSOP is a dimeric voltage-gated H(+) channel in which the gating of one subunit is reportedly coupled to that of the other subunit within the dimer. The molecular basis for dimer formation and intersubunit coupling, however, remains unknown. Here we show that the carboxy terminus ends downstream of the S4 voltage-sensor helix twist in a dimer coiled-coil architecture, which mediates cooperative gating. We also show that the temperature-dependent activation of H(+) current through Hv1/VSOP is regulated by thermostability of the coiled-coil domain, and that this regulation is altered by mutation of the linker between S4 and the coiled-coil. Cooperative gating within the dimer is also dependent on the linker structure, which circular dichroism spectrum analysis suggests is α-helical. Our results indicate that the cytoplasmic coiled-coil strands form continuous α-helices with S4 and mediate cooperative gating to adjust the range of temperatures over which Hv1/VSOP operates.

  5. Radiation dose study in nuclear medicine using GATE

    Science.gov (United States)

    Aguwa, Kasarachi

    Dose as a result of radiation exposure is the notion generally used to disclose the imparted energy in a volume of tissue to a potential biological effect. The basic unit defined by the international system of units (SI system) is the radiation absorbed dose, which is expressed as the mean imparted energy in a mass element of the tissue known as "gray" (Gy) or J/kg. The procedure for ascertaining the absorbed dose is complicated since it involves the radiation transport of numerous types of charged particles and coupled photon interactions. The most precise method is to perform a full 3D Monte Carlo simulation of the radiation transport. There are various Monte Carlo toolkits that have tool compartments for dose calculations and measurements. The dose studies in this thesis were performed using the GEANT4 Application for Emission Tomography (GATE) software (Jan et al., 2011) GATE simulation toolkit has been used extensively in the medical imaging community, due to the fact that it uses the full capabilities of GEANT4. It also utilizes an easy to-learn GATE macro language, which is more accessible than learning the GEANT4/C++ programming language. This work combines GATE with digital phantoms generated using the NCAT (NURBS-based cardiac-torso phantom) toolkit (Segars et al., 2004) to allow efficient and effective estimation of 3D radiation dose maps. The GATE simulation tool has developed into a beneficial tool for Monte Carlo simulations involving both radiotherapy and imaging experiments. This work will present an overview of absorbed dose of common radionuclides used in nuclear medicine and serve as a guide to a user who is setting up a GATE simulation for a PET and SPECT study.

  6. Brain anatomy and sensorimotor gating in Asperger's syndrome.

    Science.gov (United States)

    McAlonan, Grainne M; Daly, Eileen; Kumari, Veena; Critchley, Hugo D; van Amelsvoort, Therese; Suckling, John; Simmons, Andrew; Sigmundsson, Thordur; Greenwood, Kathyrn; Russell, Ailsa; Schmitz, Nicole; Happe, Francesca; Howlin, Patricia; Murphy, Declan G M

    2002-07-01

    Asperger's syndrome (an autistic disorder) is characterized by stereotyped and obsessional behaviours, and pervasive abnormalities in socio-emotional and communicative behaviour. These symptoms lead to social exclusion and a significant healthcare burden; however, their neurobiological basis is poorly understood. There are few studies on brain anatomy of Asperger's syndrome, and no focal anatomical abnormality has been reliably reported from brain imaging studies of autism, although there is increasing evidence for differences in limbic circuits. These brain regions are important in sensorimotor gating, and impaired 'gating' may partly explain the failure of people with autistic disorders to inhibit repetitive thoughts and actions. Thus, we compared brain anatomy and sensorimotor gating in healthy people with Asperger's syndrome and controls. We included 21 adults with Asperger's syndrome and 24 controls. All had normal IQ and were aged 18-49 years. We studied brain anatomy using quantitative MRI, and sensorimotor gating using prepulse inhibition of startle in a subset of 12 individuals with Asperger's syndrome and 14 controls. We found significant age-related differences in volume of cerebral hemispheres and caudate nuclei (controls, but not people with Asperger's syndrome, had age-related reductions in volume). Also, people with Asperger's syndrome had significantly less grey matter in fronto-striatal and cerebellar regions than controls, and widespread differences in white matter. Moreover, sensorimotor gating was significantly impaired in Asperger's syndrome. People with Asperger's syndrome most likely have generalized alterations in brain development, but this is associated with significant differences from controls in the anatomy and function of specific brain regions implicated in behaviours characterizing the disorder. We hypothesize that Asperger's syndrome is associated with abnormalities in fronto-striatal pathways resulting in defective sensorimotor

  7. Effect of Gate Length on the DC and RF Performance of GaN HEMT Devices

    Directory of Open Access Journals (Sweden)

    Ahmet Toprak

    2015-09-01

    Full Text Available In this work, we report GaN high-electron-mobility-transistors (HEMTs on SiC with gate lengths of various dimensions for optimum performance. 125 µm gate width, 4 µm drain source spacing AlGaN/GaN HEMTs with gate lengths of 0.3, 0.6, 0.8, and 1.0 µm were fabricated. For devices with the gate lengths in the range of 0.3-0.8 µm, with an increase in gate length, the output power density (Pout at 4 GHz is increased from 1W/mm to 1.5W/mm, although the Ids,max, gm, ft and fmax values are decreased in acceptable limits. The great enhancement in Pout with the increase in the gate length is due to fact that the increase in gate length affects the controllability of the electric field under the channel; hence the peak value of the electric field under gate contact decreases and the electric field variation under the gate contacts is smoother. For the device with the gate length of 1.0 µm Ids,max , gm values are almost the same as the values with the gate length of 0.8 µm, but Pout is decreased, since with this gate length the increase in parasitic capacitances is more effective and this limits the improvement due to the gate length increase.

  8. An oxide filled extended trench gate super junction MOSFET structure

    Institute of Scientific and Technical Information of China (English)

    Wang Cai-Lin; Sun Jun

    2009-01-01

    This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.

  9. Basic Reversible Logic Gates and It’s Qca Implementation

    Directory of Open Access Journals (Sweden)

    Papiya Biswas,

    2014-06-01

    Full Text Available Reversible logic has various applications in various field like in Nanotechnology, quantum computing, Low power CMOS, Optical computing and DNA computing, etc. Quantum computation is One of the most important applications of the reversible logic.Basically reversible circuits do not lose information & reversible computation is performed only when system comprises of reversible gates. The reversible logic is design,main purposes are - decrease quantum cost, depth of the circuits & the number of garbage output. This paper provides the basic‘s of reversible logic gates & its implementation in qca.

  10. Optimized reversible BCD adder using new reversible logic gates

    CERN Document Server

    Bhagyalakshmi, H R

    2010-01-01

    Reversible logic has received great attention in the recent years due to their ability to reduce the power dissipation which is the main requirement in low power digital design. It has wide applications advanced computing, low power CMOS design, Optical information processing, DNA computing, bio information, quantum computation and nanotechnology. This paper presents an optimized reversible BCD adder using a new reversible gate. A comparative result is presented which shows that the proposed design is more optimized in terms of number of gates, number of garbage outputs and quantum cost than the existing designs.

  11. A method for characterizing coherent-state quantum gates

    CERN Document Server

    Blandino, Rémi; Barbieri, Marco; Grangier, Philippe; Tualle-Brouri, Rosa

    2011-01-01

    We discuss and implement experimentally a method for characterizing quantum gates operating on superpositions of coherent states. The peculiarity of this encoding of qubits is to work with a non-orthogonal basis, and therefore some technical limitations prevent us from using standard methods, such as process tomography. We adopt a different technique, that relies on some a-priori knowledge about the physics underlying the functioning of the device. A parameter characterizing the global quality of the quantum gate is obtained by \\virtually" processing an entangled state.

  12. High-transconductance graphene solution-gated field effect transistors

    Science.gov (United States)

    Hess, L. H.; Hauf, M. V.; Seifert, M.; Speck, F.; Seyller, T.; Stutzmann, M.; Sharp, I. D.; Garrido, J. A.

    2011-07-01

    In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.

  13. Orientation of the northern gate of the Goseck Neolithic rondel

    OpenAIRE

    Ridderstad, Marianna

    2009-01-01

    The two southernmost gates of the Goseck rondel, built by the Stichbandkeramik culture around 4800 BCE, were oriented to the winter solstice sunrise and sunset. The northern gate of the rondel deviates a few degrees from the Meridian line. It is suggested that this deviation from the cardinal direction is due a stellar orientation towards Edasich, which was the pole star at the time, and is thus related to the concept of the world pillar and the pole star as the top of it.

  14. Two-Qubit Quantum Logic Gate in Molecular Magnets

    Institute of Scientific and Technical Information of China (English)

    HOU Jing-Min; TIAN Li-Jun; GE Mo-Lin

    2005-01-01

    @@ We propose a scheme to realize a controlled-NOT quantum logic gate in a dimer of exchange coupled singlemolecule magnets, [Mn4]2. We chosen the ground state and the three low-lying excited states of a dimer in a finite longitudinal magnetic field as the quantum computing bases and introduced a pulsed transverse magnetic field with a special frequency. The pulsed transverse magnetic field induces the transitions between the quantum computing bases so as to realize a controlled-NOT quantum logic gate. The transition rates between a pair of the four quantum computing bases and between the quantum computing bases and excited states are evaluated and analysed.

  15. Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

    Science.gov (United States)

    Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

    2014-02-07

    Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

  16. Analogue Building Blocks Based on Digital CMOS Gates

    DEFF Research Database (Denmark)

    Mucha, Igor

    1996-01-01

    Low-performance analogue circuits built of digital MOS gates are presented. Depending on the threshold voltages of the technology used the final circuits can be operated using low supply voltages. The main advantage using the proposed circuits is the simplicity and ultimate compatibility with the......Low-performance analogue circuits built of digital MOS gates are presented. Depending on the threshold voltages of the technology used the final circuits can be operated using low supply voltages. The main advantage using the proposed circuits is the simplicity and ultimate compatibility...

  17. Entangling Gate of Dipolar Molecules Coupled to a Photonic Crystal

    Institute of Scientific and Technical Information of China (English)

    XUE Peng

    2011-01-01

    A hybrid entangling gate is proposed by using the coherent interaction between dipolar molecules and a photonic crystal microcavity, which is effected by virtual electric dipole transitions. Noise is included in the present model and high feasibility of the scheme with current experimental conditions is shown.%@@ A hybrid entangling gate is proposed by using the coherent interaction between dipolar molecules and a photonic crystal microcavity,which is effected by virtual electric dipole transitions.Noise is included in the present model and high feasibility of the scheme with current experimental conditions is shown.

  18. Electron transmission efficiency of gating-GEM foil for TPC

    Institute of Scientific and Technical Information of China (English)

    XIE Wen-Qing; HUANG Meng; LI Ting; TIAN Yang; LI Yu-Lan; LI Yuan-Jing

    2012-01-01

    In a TPC,ion feedback from the readout detector can cause a space-charge effect and distort the electrical field in the drift region.Gating is one of the effective methods to solve this problem,which can block ions at the expense of losing a certain amount of primary electrons.Compared with the traditional design with a wire structure,gating based on GEM foil is more attractive because of its simplicity.In this paper,the factors influencing the electron transmission efficiency are studied with simulations and experiments.After optimizing all these parameters,an electron transmission efficiency over 80% is obtained.

  19. Back-gate effects and mobility characterization in junctionless transistor

    Science.gov (United States)

    Parihar, Mukta Singh; Liu, Fanyu; Navarro, Carlos; Barraud, Sylvain; Bawedin, Maryline; Ionica, Irina; Kranti, Abhinav; Cristoloveanu, Sorin

    2016-11-01

    This work addresses the effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced Fully Depleted Silicon-on-Insulator (FDSOI) technology. A systematic methodology to extract and distinguish the contributions of bulk and accumulation-mode mobility has been developed. Front-gate voltage strongly controls the transport properties of back channel in ultra-thin heavily doped JL devices. It is demonstrated that both volume and accumulation-layer mobility values increase when the front interface is in accumulation.

  20. Nonlinear properties of gated graphene in a strong electromagnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Avetisyan, A. A., E-mail: artakav@ysu.am; Djotyan, A. P., E-mail: adjotyan@ysu.am [Yerevan State University, Department of Physics (Armenia); Moulopoulos, K., E-mail: cos@ucy.ac.cy [University of Cyprus, Department of Physics (Cyprus)

    2017-03-15

    We develop a microscopic theory of a strong electromagnetic field interaction with gated bilayer graphene. Quantum kinetic equations for density matrix are obtained using a tight binding approach within second quantized Hamiltonian in an intense laser field. We show that adiabatically changing the gate potentials with time may produce (at resonant photon energy) a full inversion of the electron population with high density between valence and conduction bands. In the linear regime, excitonic absorption of an electromagnetic radiation in a graphene monolayer with opened energy gap is also studied.

  1. Optimal two qubit gate for generation of random bipartite entanglement

    CERN Document Server

    Znidaric, M

    2007-01-01

    We study protocols for generation of random pure states consisting of repeated applications of two qubit transformations. Necessary number of steps needed in order to generate states displaying bipartite entanglement typical of random states is obtained. We also find the optimal two qubit gate for which the convergence is the fastest. Perhaps surprisingly, applying the same good two qubit gate in addition to a random single qubit rotations at each step leads to a faster generation of entanglement than applying a random two qubit transformation at each step.

  2. Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

    Science.gov (United States)

    Wang, Jianfeng

    This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate

  3. Sorting Network for Reversible Logic Synthesis

    CERN Document Server

    Islam, Md Saiful; Mahmud, Abdullah Al; karim, Muhammad Rezaul

    2010-01-01

    In this paper, we have introduced an algorithm to implement a sorting network for reversible logic synthesis based on swapping bit strings. The algorithm first constructs a network in terms of n*n Toffoli gates read from left to right. The number of gates in the circuit produced by our algorithm is then reduced by template matching and removing useless gates from the network. We have also compared the efficiency of the proposed method with the existing ones.

  4. The position of the fast-inactivation gate during lidocaine block of voltage-gated Na+ channels.

    Science.gov (United States)

    Vedantham, V; Cannon, S C

    1999-01-01

    Lidocaine produces voltage- and use-dependent inhibition of voltage-gated Na+ channels through preferential binding to channel conformations that are normally populated at depolarized potentials and by slowing the rate of Na+ channel repriming after depolarizations. It has been proposed that the fast-inactivation mechanism plays a crucial role in these processes. However, the precise role of fast inactivation in lidocaine action has been difficult to probe because gating of drug-bound channels does not involve changes in ionic current. For that reason, we employed a conformational marker for the fast-inactivation gate, the reactivity of a cysteine substituted at phenylalanine 1304 in the rat adult skeletal muscle sodium channel alpha subunit (rSkM1) with [2-(trimethylammonium)ethyl]methanethiosulfonate (MTS-ET), to determine the position of the fast-inactivation gate during lidocaine block. We found that lidocaine does not compete with fast-inactivation. Rather, it favors closure of the fast-inactivation gate in a voltage-dependent manner, causing a hyperpolarizing shift in the voltage dependence of site 1304 accessibility that parallels a shift in the steady state availability curve measured for ionic currents. More significantly, we found that the lidocaine-induced slowing of sodium channel repriming does not result from a slowing of recovery of the fast-inactivation gate, and thus that use-dependent block does not involve an accumulation of fast-inactivated channels. Based on these data, we propose a model in which transitions along the activation pathway, rather than transitions to inactivated states, play a crucial role in the mechanism of lidocaine action.

  5. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning, E-mail: phwang@ust.hk [Department of Physics and the William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

    2014-12-15

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.

  6. Gated communities and urban sustainability: taking a closer look at the future

    CSIR Research Space (South Africa)

    Landman, K

    2000-08-01

    Full Text Available . These types of developments range from gated communities around golf courses to entirely enclosed cities that feature guarded entrances2. Gated communities are also increasing in other countries, for example Spain, Portugal, Russia, Turkey, Egypt, Syria...

  7. A modular design of molecular qubits to implement universal quantum gates

    Science.gov (United States)

    Ferrando-Soria, Jesús; Moreno Pineda, Eufemio; Chiesa, Alessandro; Fernandez, Antonio; Magee, Samantha A.; Carretta, Stefano; Santini, Paolo; Vitorica-Yrezabal, Iñigo J.; Tuna, Floriana; Timco, Grigore A.; McInnes, Eric J. L.; Winpenny, Richard E. P.

    2016-04-01

    The physical implementation of quantum information processing relies on individual modules--qubits--and operations that modify such modules either individually or in groups--quantum gates. Two examples of gates that entangle pairs of qubits are the controlled NOT-gate (CNOT) gate, which flips the state of one qubit depending on the state of another, and the gate that brings a two-qubit product state into a superposition involving partially swapping the qubit states. Here we show that through supramolecular chemistry a single simple module, molecular {Cr7Ni} rings, which act as the qubits, can be assembled into structures suitable for either the CNOT or gate by choice of linker, and we characterize these structures by electron spin resonance spectroscopy. We introduce two schemes for implementing such gates with these supramolecular assemblies and perform detailed simulations, based on the measured parameters including decoherence, to demonstrate how the gates would operate.

  8. Quantum Process Tomography of a Universal Entangling Gate Implemented with Josephson Phase Qubits

    CERN Document Server

    Bialczak, Radoslaw C; Hofheinz, Max; Lucero, Erik; Neeley, Matthew; O'Connell, Aaron; Sank, Daniel; Wang, Haohua; Wenner, James; Steffen, Matthias; Cleland, Andrew; Martinis, John

    2009-01-01

    Quantum logic gates must perform properly when operating on their standard input basis states, as well as when operating on complex superpositions of these states. Experiments using superconducting qubits have validated the truth table for particular implementations of e.g. the controlled-NOT gate [1,2], but have not fully characterized gate operation for arbitrary superpositions of input states. Here we demonstrate the use of quantum process tomography (QPT) [3,4] to fully characterize the performance of a universal entangling gate between two superconducting quantum bits. Process tomography permits complete gate analysis, but requires precise preparation of arbitrary input states, control over the subsequent qubit interaction, and simultaneous single-shot measurement of the output states. We use QPT to measure the fidelity of the entangling gate and to quantify the decoherence mechanisms affecting the gate performance. In addition to demonstrating a promising fidelity, our entangling gate has a on/off ratio...

  9. An integer programming model for gate assignment problem at airline terminals

    Science.gov (United States)

    Chun, Chong Kok; Nordin, Syarifah Zyurina

    2015-05-01

    In this paper, we concentrate on a gate assignment problem (GAP) at the airlines terminal. Our problem is to assign an arrival plane to a suitable gate. There are two considerations needed to take. One of its is passenger walking distance from arrival gate to departure gate while another consideration is the transport baggage distance from one gate to another. Our objective is to minimize the total distance between the gates that related to assign the arrival plane to the suitable gates. An integer linear programming (ILP) model is proposed to solve this gate assignment problem. We also conduct a computational experiment using CPLEX 12.1 solver in AIMMS 3.10 software to analyze the performance of the model. Results of the computational experiments are presented. The efficiency of flights assignment is depends on the ratio of the weight for both total passenger traveling distances and total baggage transport distances.

  10. Rational Design of a Fusion Protein to Exhibit Disulfide-Mediated Logic Gate Behavior

    Science.gov (United States)

    2015-01-01

    Synthetic cellular logic gates are primarily built from gene circuits owing to their inherent modularity. Single proteins can also possess logic gate functions and offer the potential to be simpler, quicker, and less dependent on cellular resources than gene circuits. However, the design of protein logic gates that are modular and integrate with other cellular components is a considerable challenge. As a step toward addressing this challenge, we describe the design, construction, and characterization of AND, ORN, and YES logic gates built by introducing disulfide bonds into RG13, a fusion of maltose binding protein and TEM-1 β-lactamase for which maltose is an allosteric activator of enzyme activity. We rationally designed these disulfide bonds to manipulate RG13’s allosteric regulation mechanism such that the gating had maltose and reducing agents as input signals, and the gates could be toggled between different gating functions using redox agents, although some gates performed suboptimally. PMID:25144732

  11. A Gate-to-gate Case Study of the Life Cycle Assessment of an Oil Palm Seedling

    OpenAIRE

    Muhamad, Halimah; Sahid, Ismail Bin; Surif, Salmijah; Ai, Tan Yew; May, Choo Yuen

    2012-01-01

    The palm oil industry has played an important role in the economic development of Malaysia and has enhanced the economic welfare of its people. To determine the environmental impact of the oil palm seedling at the nursery stage, information on inputs and outputs need to be assessed. The oil palm nursery is the first link in the palm oil supply chain. A gate-to-gate study was carried out whereby the system boundary was set to only include the process of the oil palm seedling. The starting poin...

  12. LIFE CYCLE ASSESSMENT FOR OIL PALM BASED PLYWOOD: A GATE-TO-GATE CASE STUDY

    Directory of Open Access Journals (Sweden)

    M. Shamim Ahmad

    2014-01-01

    Full Text Available Life Cycle Assessment (LCA is an important tool for identifying potential environmental impacts associated with the production of palm based plywood. This study is to make available the life cycle inventory for gate-to-gate data so that the environmental impact posed by oil palm based plywood production can be assessed. Conducting an LCA on the palm based plywood that are derived from the wastes of the oil palm industry is a first step towards performing green environmental product. Therefore.establishing baseline information for the complete environmental profile of the palm oil plywood is essential. Data from this study on the environmental impact for the production of palm plywood would help to develop sustainable palm plywood product. The results will provide information to identify ways and measures to reduce the environmental impacts. Most foreground data were collected directly from numbers oil palm plywood factories which represent 40% of the palm plywood industry in Peninsular Malaysia. Data gaps were filled by information obtained through questionnaires which were developed specifically for data collection, literature, public database or further calculated from obtained data. The outputs and inputs from production activities were quantified on the basis of functional unit of production of 1 m3from different types of oil palm based plywood i.e., Moisture Resistant (MR, Weather Boiling Proof (WBP Grade 1 and Weather Boiling Proof (WBP Grade 2. The life cycle impact assessment was carried out using SimaPro 7.1 software and the eco-indicator 99 methodology. The weighting results of LCA for the production of 1 cubic meter of oil palm based plywood showed significant impact in descending order i.e., fossil fuel, respiratory inorganic and climate change. The most significant process contributing to these environmental impacts came from the production and usage of adhesives, transportation of oil palm trunks from plantation to factory and

  13. Life cycle inventory for palm based plywood: A gate-to-gate case study

    Science.gov (United States)

    Ahmad, Shamim; Sahid, Ismail; Subramaniam, Vijaya; Muhamad, Halimah; Mokhtar, Anis

    2013-11-01

    The oil palm industry heavily relies on the world market. It is essential to ensure that the oil palm industry is ready to meet the demands and expectation of these overseas customers on the environmental performance of the oil palm industry. Malaysia produces 13.9 million tons of oil palm biomass including oil palm trunk (OPT), frond and empty fruits bunches (EFB) annually. OPT felled in some oil palm plantations during replanting is transported to various industries and one such industry is the plywood factories. In order to gauge the environmental performance of the use of OPT as plywood a Life Cycle Assessment (LCA) study was conducted for palm based plywood. LCA is an important tool to assess the environmental performance of a product or process. Life cycle inventory (LCI) is the heart of a LCA study. This LCI study has a gate-to-gate system boundary and the functional unit is 1 m3 palm plywood produced and covers three types of plywood; Moisture Resistance Plywood (MR), Weather Boiling Proof Plywood Grade 1 (WBP Grade 1) at Factory D and Weather Boiling Proof Plywood Grade 2 (WBP Grade 2) at Factory E. Both factories use two different types of drying processes; conventional drying at Factory D and kiln drying at Factory E. This inventory data was collected from two factories (D and E) representing 40% of Malaysia palm plywood industry. The inputs are mainly the raw materials which are the oil palm trunks and tropical wood veneers and the energy from diesel and electricity from grid which is mainly used for the drying process. The other inputs include water, urea formaldehyde, phenol formaldehyde, flour and melamine powder. The outputs are the biomass waste which consists of oil palm trunk off-cut and emission from boiler. Generally, all types of plywood production use almost same materials and processing methods in different quantities. Due to the different process efficiency, Factory D uses less input of raw materials and energy compared to Factory E.

  14. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2000-01-01

    Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

  15. Temperature-controlled molecular depolarization gates in nuclear magnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

    2008-02-27

    Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

  16. The necropolis outside the Myndos Gate in Halikarnassos - five inscriptions

    DEFF Research Database (Denmark)

    Isager, Signe

    2016-01-01

    Five funerary inscriptions from the necropolis outside the Myndos Gate, four of them dating to probably early 3rd century AD are published for the first time. Each text defines the ownership and rules for a tomb or burial-place. Two of them end by cursing any violator of these rules. Four...

  17. Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches

    Energy Technology Data Exchange (ETDEWEB)

    Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

    2013-11-25

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

  18. Implimentations of SIMD machine using programmable gate array

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Field Programmable Gate Array(FPGA) and Single Instruction Multiple Data(SIMD) processing array share many architecture features. In both architectures, an array is employed to provide high-speed computation.In this paper we show that the implementation of a Single Instruction Multiple Data (SIMD) machine the ABC 90 using the Field Programmable Gate Array (FPGA) is not completely suitable because of its characteristics.The comparison between the programmable gate arrays show that, they have many architectures features in common. Within this framework, we examine the differences and similarities between these array structures and touch upon techniques and lessons which can be done between these architectures in order to choose the appropriate Programmable gate array to implement a general purpose parallel computer.In this paper we introduce the principal of the Dynamically Programmable Date Array(DPGA) which combines the best feature of the FPGA and the SIMD arrays into a single array architecture. By the same way we show that the DPGA is more appropriate then the FPGA for wiring, hardwiring the general purpose parallel computers: SIMD and its implementation.

  19. A Literature Unit for "Dragon's Gate" by Laurence Yep.

    Science.gov (United States)

    Thomas-Vallens, Mary

    Intended as a an aid to classroom teachers, this 52-page handbook presents a literature unit based on the children and young people's book, "Dragon's Gate" by Laurence Yep. It begins with sample lesson plans, pre-reading activities, author information, a book summary, vocabulary lists and suggested vocabulary activities. Next, chapters…

  20. Randomized benchmarking of quantum gates implemented by electron spin resonance

    Science.gov (United States)

    Park, Daniel K.; Feng, Guanru; Rahimi, Robabeh; Baugh, Jonathan; Laflamme, Raymond

    2016-06-01

    Spin systems controlled and probed by magnetic resonance have been valuable for testing the ideas of quantum control and quantum error correction. This paper introduces an X-band pulsed electron spin resonance spectrometer designed for high-fidelity coherent control of electron spins, including a loop-gap resonator for sub-millimeter sized samples with a control bandwidth ∼40 MHz. Universal control is achieved by a single-sideband upconversion technique with an I-Q modulator and a 1.2 GS/s arbitrary waveform generator. A single qubit randomized benchmarking protocol quantifies the average errors of Clifford gates implemented by simple Gaussian pulses, using a sample of gamma-irradiated quartz. Improvements in unitary gate fidelity are achieved through phase transient correction and hardware optimization. A preparation pulse sequence that selects spin packets in a narrowed distribution of static fields confirms that inhomogeneous dephasing (1 / T2∗) is the dominant source of gate error. The best average fidelity over the Clifford gates obtained here is 99.2 % , which serves as a benchmark to compare with other technologies.