Kosterlitz-Thouless superfluid transition for thin helium-4 films adsorbed in porous media

International Nuclear Information System (INIS)

Kotsubo, V.Y.

1985-01-01

Thin helium-4 films adsorbed in porous media with small grain sizes are studied in an attempt to understand size effects on the thin-film superfluid transition. Films were adsorbed in 500A, 3000A, and 1μ diameter packed alumina powders, and the superfluidity density was probed using third sound. The main features observed are a broadening of the transition and a reduction of third sound attenuation as the grain sizes are reduced. To explain the results, the flat-substrate Kosterlitz-Thouless theory is adapted to a finite-size system. The model, which is based on the behavior of thermally excited vortices, qualitatively agrees with the experimental results. Fits to the sound velocity data produces reasonable values for the parameters of the vortices, but quantitative agreement with the attenuation data could not be achieved. The overall results of this study suggests that the transition evolves continuously as the geometry changes form the flat substrate down to this small scale systems

Air-stable n-type doping of graphene from overlying Si3N4 film

International Nuclear Information System (INIS)

Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Qi, Fei; Tian, Hongjun; Zheng, Binjie; Zhou, Jinhao

2014-01-01

In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si 3 N 4 film on the surface of graphene. We have demonstrated that the overlying Si 3 N 4 film can not only act as the penetration-barrier against H 2 O and O 2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si 3 N 4 . Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si 3 N 4 film, which is due to competing effects of Si 3 N 4 -induced doping (n-type) and penetrating H 2 O (O 2 )-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.

Heat capacity of quantum adsorbates: Hydrogen and helium on evaporated gold films

International Nuclear Information System (INIS)

Birmingham, J.T.; Lawrence Berkeley National Lab., CA

1996-06-01

The author has constructed an apparatus to make specific heat measurements of quantum gases adsorbed on metallic films at temperatures between 0.3 and 4 K. He has used this apparatus to study quench-condensed hydrogen films between 4 and 923 layers thick with J = 1 concentrations between 0.28 and 0.75 deposited on an evaporated gold surface. He has observed that the orientational ordering of the J = 1 molecules depends on the substrate temperature during deposition of the hydrogen film. He has inferred that the density of the films condensed at the lowest temperatures is 25% higher than in bulk H 2 crystals and have observed that the structure of those films is affected by annealing at 3.4 K. The author has measured the J = 1 to J = 0 conversion rate to be comparable to that of the bulk for thick films; however, he found evidence that the gold surface catalyzes conversion in the first two to four layers. He has also used this apparatus to study films of 4 He less than one layer thick adsorbed on an evaporated gold surface. He shows that the phase diagram of the system is similar to that for 4 He/graphite although not as rich in structure, and the phase boundaries occur at different coverages and temperatures. At coverages below about half a layer and at sufficiently high temperatures, the 4 He behaves like a two-dimensional noninteracting Bose gas. At lower temperatures and higher coverages, liquidlike and solidlike behavior is observed. The Appendix shows measurements of the far-infrared absorptivity of the high-T c superconductor La 1.87 Sr 0.13 CuO 4

Comparative study of normal and branched alkane monolayer films adsorbed on a solid surface. I. Structure

DEFF Research Database (Denmark)

Enevoldsen, Ann Dorrit; Hansen, Flemming Yssing; Diama, A.

2007-01-01

their backbone and squalane has, in addition, six methyl side groups. Upon adsorption, there are significant differences as well as similarities in the behavior of these molecular films. Both molecules form ordered structures at low temperatures; however, while the melting point of the two-dimensional (2D......The structure of a monolayer film of the branched alkane squalane (C30H62) adsorbed on graphite has been studied by neutron diffraction and molecular dynamics (MD) simulations and compared with a similar study of the n-alkane tetracosane (n-C24H52). Both molecules have 24 carbon atoms along...... temperature. The neutron diffraction data show that the translational order in the squalane monolayer is significantly less than in the tetracosane monolayer. The authors' MD simulations suggest that this is caused by a distortion of the squalane molecules upon adsorption on the graphite surface. When...

Electron and photon-beam induced reactions of adsorbed disilane: Low-temperature thin-film growth

International Nuclear Information System (INIS)

Bozso, F.; Avouris, Ph.

1991-01-01

Electrons and photons of sufficient energy can cause fragmentation and desorption of adsorbed molecules or fragments of them, by inducing electronic excitations to dissociative states. The surface species after such excitations are mostly of highly reactive radical character, which readily react with the substrate and with other molecular or radical species in the adsorbed layer. This paper discusses the adsorption, thermal and electron/photon-beam induced reactions of disilane, oxygen and ammonia on Si(111)-7x7, and the electron/photon-induced growth of silicon, silicon dioxide and silicon nitride films at 100K

Oxygen effect on the work function of electropositive metal films adsorbed on 4d and 5d-transition metals

International Nuclear Information System (INIS)

Kultashev, O.K.; Makarov, A.P.; Rozhkov, S.E.

1976-01-01

The thermionic emission method was used to study the effect of oxygen upon the work function of films of electropositive metals, Sc, Y, La and Ba on some monocrystal and polycrystalline specimens of 4d- and 5d-transition metals of groups 4-8 of the Periodic system. It was revealed that when the supports were polycrystalline and monocrystalline specimens of transition metals of Group 5 (niobium and tantalum), the work function phi of films of electropositive adsorbates dropped substantially as compared, e.g., to the phi values on the same faces of tungsten. When the concentration of the electropositive adsorbate exceeds the optimum value (in the absence of oxygen), oxygen exerts an appreciably activating action upon the work function phi of films of electropositive adsorbates on transition metals of the Groups 7 and 8. The activating action of oxygen is assumed to be due to a possibility of formation of surface interstitial structures

The inter-adsorbate interaction mediated by Shockley-type surface state electrons and dipole moment: Cs and Ba atoms absorbed on Ag (1 1 1) films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Shuyuan [College of Physical Science and Technology, Sichuan University, Chengdu 610065 (China); Zhang, Hong, E-mail: hongzhang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610065 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Miyamoto, Yoshiyuki [Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

2014-01-15

Through first-principles investigation, we display the formation process of Shockley-type surface states which emerges on silver thin films along Ag (1 1 1) orientation with increasing thicknesses from 6 to 21 layers. We look at the surface state band for various adatoms adsorbed on 6, 12, 18 layers strained Ag (1 1 1) films with different coverage, and discuss the long range interaction mediated by surface state electrons. We discovered that film's thickness can modulate the surface state mediated interaction drastically, but the dipole–dipole repulsive interaction is not affected by slab thickness. This factor had never been discussed in detail. Therefore, adatoms adsorbed on thin films have strong attractive interaction which leads to small adsorption separation and the tendency of island formation. For different coverage or different adsorbate types, both surface states and dipole moment are modulated. The three factors, film's thickness, adsorbate coverage and adatoms types, could help us learn more about the interactions between adatoms and exploit advanced ways to control surface geometry structures of self-assembly.

The inter-adsorbate interaction mediated by Shockley-type surface state electrons and dipole moment: Cs and Ba atoms absorbed on Ag (1 1 1) films

International Nuclear Information System (INIS)

Zhang, Shuyuan; Zhang, Hong; Miyamoto, Yoshiyuki

2014-01-01

Through first-principles investigation, we display the formation process of Shockley-type surface states which emerges on silver thin films along Ag (1 1 1) orientation with increasing thicknesses from 6 to 21 layers. We look at the surface state band for various adatoms adsorbed on 6, 12, 18 layers strained Ag (1 1 1) films with different coverage, and discuss the long range interaction mediated by surface state electrons. We discovered that film's thickness can modulate the surface state mediated interaction drastically, but the dipole–dipole repulsive interaction is not affected by slab thickness. This factor had never been discussed in detail. Therefore, adatoms adsorbed on thin films have strong attractive interaction which leads to small adsorption separation and the tendency of island formation. For different coverage or different adsorbate types, both surface states and dipole moment are modulated. The three factors, film's thickness, adsorbate coverage and adatoms types, could help us learn more about the interactions between adatoms and exploit advanced ways to control surface geometry structures of self-assembly.

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

International Nuclear Information System (INIS)

Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

2012-01-01

The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermotropic phase transition in an adsorbed melissic acid film at the n-hexane-water interface

Science.gov (United States)

Tikhonov, A. M.

2017-06-01

A reversible thermotropic phase transition in an adsorption melissic acid film at the interface between n-hexane and an aqueous solution of potassium hydroxide (pH ≈ 10) is investigated by X-ray reflectometry and diffuse scattering using synchrotron radiation. The experimental data indicate that the interface "freezing" transition is accompanied not only by the crystallization of the Gibbs monolayer but also by the formation of a planar smectic structure in the 300-Å-thick adsorption film; this structure is formed by 50-Å-thick layers.

Characteristic electron energy loss in lanthanum films adsorbed on tungsten (110) single crystal

International Nuclear Information System (INIS)

Gorodetskij, D.A.; Gorchinskij, A.D.; Kobylyanskij, A.V.

1988-01-01

The spectrum of electron energy loss (ELS) in a wide range of energy loss 0-150 eV has been studied for La films adsorbed on W(110) single crystal with the coverage Θ from submonolayer to a few monolayers. The concentration dependence of loss energy peaks amplitude of different nature has been studied for the adsorption of rare earth element on refractory substrate. It has been shown that the essential information for the interpretation of the energy loss nature may be obtained by the investigation of such dependences for La adsorption on W(110). It is found that the surface and bulk plasmons peaks appear in ELS of La-W(110) system before the completion of the physical monolayer. Thus, the collectivization of valence electrons in the rare earth element film at the transition metal surface ensues for the submonolayer coverage like in the case of collective processes in alkali and alkaline earth element films

Adsorption of lysozyme to phospholipid and meibomian lipid monolayer films.

Science.gov (United States)

Mudgil, Poonam; Torres, Margaux; Millar, Thomas J

2006-03-15

It is believed that a lipid layer forms the outer layer of the pre-ocular tear film and this layer helps maintain tear film stability by lowering its surface tension. Proteins of the aqueous layer of the tear film (beneath the lipid layer) may also contribute to reducing surface tension by adsorbing to, or penetrating the lipid layer. The purpose of this study was to compare the penetration of lysozyme, a tear protein, into films of meibomian lipids and phospholipids held at different surface pressures to determine if lysozyme were part of the surface layer of the tear film. Films of meibomian lipids or phospholipids were spread onto the surface of a buffered aqueous subphase. Films were compressed to particular pressures and lysozyme was injected into the subphase. Changes in surface pressure were monitored to determine adsorption or penetration of lysozyme into the surface film. Lysozyme penetrated a meibomian lipid film at all pressures tested (max=20 mN/m). It also penetrated phosphatidylglycerol, phosphatidylserine or phosphatidylethanolamine lipid films up to a pressure of 20 mN/m. It was not able to penetrate a phosphatidylcholine film at pressures >or=10 mN/m irrespective of the temperature being at 20 or 37 degrees C. However, it was able to penetrate it at very low pressures (<10 mN/m). Epifluorescence microscopy showed that the protein either adsorbs to or penetrates the lipid layer and the pattern of mixing depended upon the lipid at the surface. These results indicate that lysozyme is present at the surface of the tear film where it contributes to decreasing the surface tension by adsorbing and penetrating the meibomian lipids. Thus it helps to stabilize the tear film.

Conduction and TSC properties of LB films adsorbing cyanine dyes; Cyanine shikiso kyuchaku LB maku ni okeru denki dendo oyobi netsushigeki denryu tokusei

Energy Technology Data Exchange (ETDEWEB)

Shinbo, K.; Kato, K.; Kaneko, F.; Kobayashi, S. [Niigata University, Niigata (Japan)

1995-05-20

The electric properties were investigated for phosphatidic acid (PA) LB films adsorbing cyanide dyes (NK-3) with sandwich electrodes. PA LB adsorbing the dyes and the monolayers of Cd salt without the dyes are deposited using subphases, containing various concentrations of the dyes and containing CdCl2 instead of the dyes, respectively. Conduction currents are measured at room temperature for the PA LB film devices. Increases in the conduction currents are observed in the LB films containing the dyes. Furthermore, the conduction currents remarkably increase using the Au upper electrode. The current(I) vs. voltage (V) properties nearly follow the Poole conduction, log(I)-V. Therefore, the conduction currents are very complicated and are thought to be due to composite mechanisms in the film and at the interface. TSC measurements are used to examine the dipolar polarizations in the PA LB films, in the temperature region between 150 K and 300 K. Remarkable increase of TSCs are observed above 260 K for the devices containing the dyes. The TSCs are caused by the dipolar polarizations, and increase with the quantity of the dyes contained in the LB devices and/or aggregations of the dyes. The results are useful for applications of ultrathin film devices in the future. 16 refs., 11 figs., 3 tabs.

Transporting method for adsorbing tower and the adsorbing tower

International Nuclear Information System (INIS)

Shimokawa, Nobuhiro.

1996-01-01

A cylindrical plastic bag is disposed to the upper surface of an adsorbing tower so as to surround a suspending piece. One opening of the bag is sealed, and other opening is secured in a sealed state to a bag holding portion disposed to glove box at a gate for the adsorbing tower box. The adsorbing tower is transported into the glove box, and after the completion of the operation of the adsorbing tower, the adsorbing tower is taken out in a state that the bag is restricted and sealed at a portion below the adsorbing tower. The bag may be made of a vinyl plastic, the bag holding portion may be a short-cylindrical protrusion, and may have an O-ring groove at the outer surface. Even if the adsorbing tower is heavy, the adsorbing tower can be carried out easily in a state where it is sealed gas tightly. (N.H.)

Role of Defects and Adsorbed Water Film in Influencing the Electrical, Optical and Catalytic Properties of Transition Metal Oxides

Science.gov (United States)

Wang, Qi

, gallium nitride and zinc oxide. Most TMOs at room temperature are known to be strongly hydrated. We show that an adsorbed water film present on the surface of TMOs facilitates the dissolution of gaseous species and promotes charge transfers at the adsorbed-water/oxide interfaces. Further, we show the role of vacancy defects in enhancing catalytic processes by directly monitoring the charge transfer process between gaseous species and vacancy defects in non-stoichiometric p-type nickel oxide and n-type tungsten oxide using in-situ NIR-PL, electrical resistance, and X-ray photoelectron spectroscopy. We find the importance of adsorbed water and vacancy defects in affecting catalytic, electronic, electrical, and optical changes such as insulator-to-metal transitions and radiative emissions during electrochemical reactions. In addition, we demonstrate that electrochemical surface transfer doping exists in another system, specifically, in gallium nitride, and the presence of this adsorbed water film present on the surface of GaN induces electron transfer from GaN that leads to the formation of an electron depletion region on the surface.

Applicability of Sol-Gel Derived Adsorbent for the Production of (n,f) 99Mo Generator

International Nuclear Information System (INIS)

Lee, Jun-Sig; Lee, Jong-Sup; Park, Ul-Jae; Son, Kwang-Jae; Han, Hyon-Soo; Kim, Myung Sic; Koo, Sung Chan; Chung, Young-Ju

2007-01-01

High performance adsorbents as the column material for (n,γ) 99 Mo/ 99 mTc and 188 W/ 188 Re generators have been developed at KAERI. These adsorbents should have enough loading capacities to produce such generators with high activities as the loading isotopes are not carrier-free. In this regard, the adsorbents are synthesized by sol-gel processing in which the ligand density can easily be adjusted and maximized. The marginal capacity of such adsorbents should be higher than 200 mg/g for molybdenum. From the previous works, the sol-gel processing techniques are adequately applied to meet the criteria. Further studies are being undertaken to employ the adsorbents for the production of high capacity (n,f) 99 Mo/ 99 mTc. Domestically, a private company has lined up the production facility of the molybdenum generator in the activity range of 300 ∼ 1,000 mCi/ea. The column elements are composed of manganese oxide doped on silica and alumina at the backup layer. In this column, the manganese oxide is the main reactive layer to retain (n,f) 99 Mo. The sol-gel derived adsorbent, in this study, is employed as the replacement of the manganese oxide doped silica in the column and tested for the loading efficiency of (n,f) 99 Mo, elution of 99 mTc, labeling property of the eluted 99 mTc. The same loading and elution procedures as the commercial production are applied for the tests and quality controls

A Neutron-Diffraction Study of the Solid Layers at the Liquid Solid Boundary in 4He-Films Adsorbed on Graphite

DEFF Research Database (Denmark)

da Costa Carneiro, Kim; Passell, L.; Thomlinson, W.

1981-01-01

A neutron scattering study of the structure of 4He films adsorbed on graphite is reported. Diffraction from helium monolayers at a temperature of 1.2K shows the formation of an incommensurate, triangular-lattice solid of high density. As the coverage is increased above two layers, the diffraction...

Diffusion of radioactively tagged penetrants through rubbery polymers. II. Dependence on molecular length of penetrant

International Nuclear Information System (INIS)

Rhee, C.K.; Ferry, J.D.; Fetters, L.J.

1977-01-01

The diffusion of radioactively tagged n-hexadecane, n-dotriacontane, and a polybutadiene oligomer with molecular weight 1600 has been studied in 12 rubbery polymers. Diffusion coefficients were obtained from the theory for the thin smear method: for n-hexadecane and for n-dotriacontane (with one exception), in the form appropriate for a completely miscible polymer-penetrant pair, and for the oligomer in the form appropriate for slow entry of the pentrant across the penetrant-polymer interface. For the four flexible linear penetrants, n-dodecane, n-hexadecane, n-dotriacontane, and oligomer, the ratios of diffusion coefficients (or translational friction coefficients) are nearly the same in every polymer. It is concluded that these penetrants travel with similar segmentwise motions, although that is not the case with bulkier, more rigid penetrants. For the three normal paraffins, the friction coefficient is approximately proportional to molecular weight, but that for the oligomer is smaller than would be predicted on this basis

New diffusive gradients in a thin film technique for measuring inorganic arsenic and selenium(IV) using a titanium dioxide based adsorbent

DEFF Research Database (Denmark)

Bennett, William W.; Teasdale, Peter R.; Panther, Jared G.

2010-01-01

A new diffusive gradients in a thin film (DGT) technique, using a titanium dioxide based adsorbent (Metsorb), has been developed and evaluated for the determination of dissolved inorganic arsenic and selenium. AsIII, AsV, and SeIV were found to be quantitatively accumulated by the adsorbent (uptake...... measurement of inorganic arsenic. Reproducibility of the technique in field deployments was good (relative standard deviation arsenic and 0.05 μg L-1 for SeIV. The results of this study confirmed that DGT with Metsorb was a reliable...... and robust method for the measurement of inorganic arsenic and the selective measurement of SeIV within useful limits of accuracy....

Thermodynamic and structural study of two-dimensional phase transitions and orientational order in films of linear molecules with a large quadrupole moment, physi-sorbed on lamellar substrates

International Nuclear Information System (INIS)

Terlain, Anne

1984-01-01

The 2D (two-dimensional) phase transitions and orientational order in N 2 O, CO 2 , C 2 N 2 and C 2 D 2 films physi-sorbed on the (0001) face of graphite or lamellar halides, were studied experimentally by adsorption isotherm measurements and neutron diffraction. The thermodynamic functions derived from sets of isotherms suggest that crystal monolayers of N 2 O, CO 2 , and C 2 N 2 adsorbed on graphite are orientationally ordered and that the quadrupolar interaction stabilizes the 2D crystal with respect to the 2D liquid. This stabilization leads to an increase in the 2D triple point temperature, T 2t as compared with the 2D critical temperature T 2c . For C 2 N 2 this stabilization is so pronounced that T 2t becomes virtually higher than T 2c , and the phase diagram qualitatively different, having no gas-liquid coexistence domain. From a neutron diffraction experiment we have determined the crystal structure of the C 2 N 2 monolayer. It supports our interpretation of the monolayer phase diagram. In N 2 O, CO 2 , C 2 N 2 films adsorbed on graphite the molecules lie flat on the surface and their orientational order hence differs from that in the bulk crystals resulting in a loss of adsorbate-adsorbate interaction energy. Beyond a given film thickness this loss will not be compensated by the adsorbate-substrate interaction and the film will stop growing. For most of the films studied a partial wetting transition is observed at which the film thickness increases discontinuously with temperature. Although C 2 N 2 and C 2 D 2 monolayers on graphite have comparable adsorption energies, only C 2 D 2 is adsorbed on lamellar halides. This adsorption is possible only because the monolayer has a large entropy due to orientational disorder. For C 2 N 2 , which has a higher moment of inertia, such an orientational disorder cannot exist. (author) [fr

Headgroup effects of template monolayers on the adsorption behavior and conformation of glucose oxidase adsorbed at air/liquid interfaces.

Science.gov (United States)

Wang, Ke-Hsuan; Syu, Mei-Jywan; Chang, Chien-Hsiang; Lee, Yuh-Lang

2011-06-21

Stearic acid (SA) and octadecylamine (ODA) monolayers at the air/liquid interface were used as template layers to adsorb glucose oxidase (GOx) from aqueous solution. The effect of the template monolayers on the adsorption behavior of GOx was studied in terms of the variation of surface pressure, the evolution of surface morphology observed by BAM and AFM, and the conformation of adsorbed GOx. The results show that the presence of a template monolayer can enhance the adsorption rate of GOx; furthermore, ODA has a higher ability, compared to SA, to adsorb GOx, which is attributed to the electrostatic attractive interaction between ODA and GOx. For adsorption performed on a bare surface or on an SA monolayer, the surface pressure approaches an equilibrium value (ca. 8 mN/m) after 2 to 3 h of adsorption and remains nearly constant in the following adsorption process. For the adsorption on an ODA monolayer, the surface pressure will increase further 1 to 2 h after approaching the first equilibrium pressure, which is termed the second adsorption stage. The measurement of circular dichroism (CD) spectroscopy indicates that the Langmuir-Blodgett films of adsorbed GOx transferred at the first equilibrium state (π = 8 mN/m) have mainly a β-sheet conformation, which is independent of the type of template monolayers. However, the ODA/GOx LB film transferred at the second adsorption stage has mainly an α-helix conformation. It is concluded that the specific interaction between ODA and GOx not only leads to a higher adsorption rate and adsorbed amount of GOx but also induces a conformation change in adsorbed GOx from β-sheet to α-helix. The present results indicate that is possible to control the conformation of adsorbed protein by selecting the appropriate template monolayer. © 2011 American Chemical Society

Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

International Nuclear Information System (INIS)

Swain, Bibhu P.

2006-01-01

In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film

Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Swain, Bibhu P. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay (India) and Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, India, Kanpur 208016 (India)]. E-mail: bibhup@iitb.ac.in

2006-12-15

In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film.

Dotriacontane-16,17-14C distribution pattern in the respiratory system of two hamster species after passive exposure to radioactive labelled smoke

International Nuclear Information System (INIS)

Kmoch, N.; Mohr, U.

1974-01-01

The quantitative and qualitative distribution of 14 C labeled dotriacontane (DOT- 14 C) determined by liquid scintillation counting and autoradiography in the respiratory system, the digestive tract, liver and kidneys of Syrian golden and European hamsters, males and females, is described after they had been exposed to radioactive labeled cigarette smoke. The different DOT- 14 C distributions are discussed in detail with special attention given to the respiratory tract, related species differences and the topographic subdivisions of apex nasi, fundus nasi, pharynx, larynx, trachea, and lungs. It is apparent that the absolute amount of activity in the respiratory tract related to body size of the Syrian golden hamster is greater than in the European hamster but that the percentual distribution exhibits a greater filtering action of the upper respiratory tract of Syrian golden hamster than of the European hamster so that a larger percentual amount of total inhaled particulate matter reaches the lungs. The European hamster might be a more useful model for the investigation of respiratory tract carcinogenesis due to the possibility of a longer life time exposure and a higher sensitivity to respiratory tract carcinogens

Relation between film thickness and surface doping of MoS2 based field effect transistors

Science.gov (United States)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

Structure and phase transitions of monolayers of intermediate-length n-alkanes on graphite studied by neutron diffraction and molecular dynamics simulation

Science.gov (United States)

Diama, A.; Matthies, B.; Herwig, K. W.; Hansen, F. Y.; Criswell, L.; Mo, H.; Bai, M.; Taub, H.

2009-08-01

We present evidence from neutron diffraction measurements and molecular dynamics (MD) simulations of three different monolayer phases of the intermediate-length alkanes tetracosane (n-C24H50 denoted as C24) and dotriacontane (n-C32H66 denoted as C32) adsorbed on a graphite basal-plane surface. Our measurements indicate that the two monolayer films differ principally in the transition temperatures between phases. At the lowest temperatures, both C24 and C32 form a crystalline monolayer phase with a rectangular-centered (RC) structure. The two sublattices of the RC structure each consists of parallel rows of molecules in their all-trans conformation aligned with their long axis parallel to the surface and forming so-called lamellas of width approximately equal to the all-trans length of the molecule. The RC structure is uniaxially commensurate with the graphite surface in its [110] direction such that the distance between molecular rows in a lamella is 4.26 Å=√3 ag, where ag=2.46 Å is the lattice constant of the graphite basal plane. Molecules in adjacent rows of a lamella alternate in orientation between the carbon skeletal plane being parallel and perpendicular to the graphite surface. Upon heating, the crystalline monolayers transform to a "smectic" phase in which the inter-row spacing within a lamella expands by ˜10% and the molecules are predominantly oriented with the carbon skeletal plane parallel to the graphite surface. In the smectic phase, the MD simulations show evidence of broadening of the lamella boundaries as a result of molecules diffusing parallel to their long axis. At still higher temperatures, they indicate that the introduction of gauche defects into the alkane chains drives a melting transition to a monolayer fluid phase as reported previously.

Modified Capillary Cell for Foam Film Studies Allowing Exchange of the Film-Forming Liquidwie

NARCIS (Netherlands)

Wierenga, P.A.; Basheva, E.S.; Denkov, N.D.

2009-01-01

Many of the macroscopic properties of foams and emulsions are controlled by the mesoscopic properties of the thin films separating the bubbles or droplets. The properties of these films depend on contributions (1) from the adsorbed surface layers and (2) from the liquid that separates these adsorbed

Diffusion Monte Carlo simulations of gas phase and adsorbed D2-(H2)n clusters

Science.gov (United States)

Curotto, E.; Mella, M.

2018-03-01

We have computed ground state energies and analyzed radial distributions for several gas phase and adsorbed D2(H2)n and HD(H2)n clusters. An external model potential designed to mimic ionic adsorption sites inside porous materials is used [M. Mella and E. Curotto, J. Phys. Chem. A 121, 5005 (2017)]. The isotopic substitution lowers the ground state energies by the expected amount based on the mass differences when these are compared with the energies of the pure clusters in the gas phase. A similar impact is found for adsorbed aggregates. The dissociation energy of D2 from the adsorbed clusters is always much higher than that of H2 from both pure and doped aggregates. Radial distributions of D2 and H2 are compared for both the gas phase and adsorbed species. For the gas phase clusters, two types of hydrogen-hydrogen interactions are considered: one based on the assumption that rotations and translations are adiabatically decoupled and the other based on nonisotropic four-dimensional potential. In the gas phase clusters of sufficiently large size, we find the heavier isotopomer more likely to be near the center of mass. However, there is a considerable overlap among the radial distributions of the two species. For the adsorbed clusters, we invariably find the heavy isotope located closer to the attractive interaction source than H2, and at the periphery of the aggregate, H2 molecules being substantially excluded from the interaction with the source. This finding rationalizes the dissociation energy results. For D2-(H2)n clusters with n ≥12 , such preference leads to the desorption of D2 from the aggregate, a phenomenon driven by the minimization of the total energy that can be obtained by reducing the confinement of (H2)12. The same happens for (H2)13, indicating that such an effect may be quite general and impact on the absorption of quantum species inside porous materials.

The molecular mechanism of mediation of adsorbed serum proteins to endothelial cells adhesion and growth on biomaterials.

Science.gov (United States)

Yang, Dayun; Lü, Xiaoying; Hong, Ying; Xi, Tingfei; Zhang, Deyuan

2013-07-01

To explore molecular mechanism of mediation of adsorbed proteins to cell adhesion and growth on biomaterials, this study examined endothelial cell adhesion, morphology and viability on bare and titanium nitride (TiN) coated nickel titanium (NiTi) alloys and chitosan film firstly, and then identified the type and amount of serum proteins adsorbed on the three surfaces by proteomic technology. Subsequently, the mediation role of the identified proteins to cell adhesion and growth was investigated with bioinformatics analyses, and further confirmed by a series of cellular and molecular biological experiments. Results showed that the type and amount of adsorbed serum proteins associated with cell adhesion and growth was obviously higher on the alloys than on the chitosan film, and these proteins mediated endothelial cell adhesion and growth on the alloys via four ways. First, proteins such as adiponectin in the adsorbed protein layer bound with cell surface receptors to generate signal transduction, which activated cell surface integrins through increasing intracellular calcium level. Another way, thrombospondin 1 in the adsorbed protein layer promoted TGF-β signaling pathway activation and enhanced integrins expression. The third, RGD sequence containing proteins such as fibronectin 1, vitronectin and thrombospondin 1 in the adsorbed protein layer bound with activated integrins to activate focal adhesion pathway, increased focal adhesion formation and actin cytoskeleton organization and mediated cell adhesion and spreading. In addition, the activated focal adhesion pathway promoted the expression of cell growth related genes and resulted in cell proliferation. The fourth route, coagulation factor II (F2) and fibronectin 1 in the adsorbed protein layer bound with cell surface F2 receptor and integrin, activated regulation of actin cytoskeleton pathway and regulated actin cytoskeleton organization. Copyright © 2013 Elsevier Ltd. All rights reserved.

Frontier molecular orbitals of a single molecule adsorbed on thin insulating films supported by a metal substrate: electron and hole attachment energies.

Science.gov (United States)

Scivetti, Iván; Persson, Mats

2017-09-06

We present calculations of vertical electron and hole attachment energies to the frontier orbitals of a pentacene molecule absorbed on multi-layer sodium chloride films supported by a copper substrate using a simplified density functional theory (DFT) method. The adsorbate and the film are treated fully within DFT, whereas the metal is treated implicitly by a perfect conductor model. We find that the computed energy gap between the highest and lowest unoccupied molecular orbitals-HOMO and LUMO -from the vertical attachment energies increases with the thickness of the insulating film, in agreement with experiments. This increase of the gap can be rationalised in a simple dielectric model with parameters determined from DFT calculations and is found to be dominated by the image interaction with the metal. We find, however, that this simplified model overestimates the downward shift of the energy gap in the limit of an infinitely thick film.

Ca-Embedded C2N: an efficient adsorbent for CO2 capture.

Science.gov (United States)

Liu, Yuzhen; Meng, Zhaoshun; Guo, Xiaojian; Xu, Genjian; Rao, Dewei; Wang, Yuhui; Deng, Kaiming; Lu, Ruifeng

2017-10-25

Carbon dioxide as a greenhouse gas causes severe impacts on the environment, whereas it is also a necessary chemical feedstock that can be converted into carbon-based fuels via electrochemical reduction. To efficiently and reversibly capture CO 2 , it is important to find novel materials for a good balance between adsorption and desorption. In this study, we performed first-principles calculations and grand canonical Monte Carlo (GCMC) simulations, to systematically study metal-embedded carbon nitride (C 2 N) nanosheets for CO 2 capture. Our first-principles results indicated that Ca atoms can be uniformly trapped in the cavity center of C 2 N structure, while the transition metals (Sc, Ti, V, Cr, Mn, Fe, Co) are favorably embedded in the sites off the center of the cavity. The determined maximum number of CO 2 molecules with strong physisorption showed that Ca-embedded C 2 N monolayer is the most promising CO 2 adsorbent among all considered metal-embedded materials. Moreover, GCMC simulations revealed that at room temperature the gravimetric density for CO 2 adsorbed on Ca-embedded C 2 N reached 50 wt% at 30 bar and 23 wt% at 1 bar, higher than other layered materials, thus providing a satisfactory system for the CO 2 capture and utilization.

Tribology of monolayer films: comparison between n-alkanethiols on gold and n-alkyl trichlorosilanes on silicon.

Science.gov (United States)

Booth, Brandon D; Vilt, Steven G; McCabe, Clare; Jennings, G Kane

2009-09-01

This Article presents a quantitative comparison of the frictional performance for monolayers derived from n-alkanethiolates on gold and n-alkyl trichlorosilanes on silicon. Monolayers were characterized by pin-on-disk tribometry, contact angle analysis, ellipsometry, and electrochemical impedance spectroscopy (EIS). Pin-on-disk microtribometry provided frictional analysis at applied normal loads from 10 to 1000 mN at a speed of 0.1 mm/s. At low loads (10 mN), methyl-terminated n-alkanethiolate self-assembled monolayers (SAMs) exhibited a 3-fold improvement in coefficient of friction over SAMs with hydroxyl- or carboxylic-acid-terminated surfaces. For monolayers prepared from both n-alkanethiols on gold and n-alkyl trichlorosilanes on silicon, a critical chain length of at least eight carbons is required for beneficial tribological performance at an applied load of 9.8 mN. Evidence for disruption of chemisorbed alkanethiolate SAMs with chain lengths n tribology wear tracks. The direct comparison between the tribological stability of alkanethiolate and silane monolayers shows that monolayers prepared from n-octadecyl dimethylchlorosilane and n-octadecyl trichlorosilane withstood normal loads at least 30 times larger than those that damaged octadecanethiolate SAMs. Collectively, our results show that the tribological properties of monolayer films are dependent on their internal stabilities, which are influenced by cohesive chain interactions (van der Waals) and the adsorbate-substrate bond.

High performance Mo adsorbent PZC

Energy Technology Data Exchange (ETDEWEB)

Anon,

1998-10-01

We have developed Mo adsorbents for natural Mo(n, {gamma}){sup 99}Mo-{sup 99m}Tc generator. Among them, we called the highest performance adsorbent PZC that could adsorb about 250 mg-Mo/g. In this report, we will show the structure, adsorption mechanism of Mo, and the other useful properties of PZC when you carry out the examination of Mo adsorption and elution of {sup 99m}Tc. (author)

Development of adsorbents for recovery of uranium from seawater

International Nuclear Information System (INIS)

Egawa, Hiroaki; Furusaki, Shintaro.

1987-01-01

The largest subject for putting the extraction of uranium from seawater in practical use is the development of high performance adsorbents for uranium. In this paper, the way of thinking about the development of adsorbents for extracting uranium from seawater and the recent reports on this subject are described. Next, the research on the adsorbing capacity and adsorbing rate of the adsorbents developed so far is summarized, and the way of thinking about the evaluation of adsorbent performance which is the base of the design of a system for extracting uranium from seawater is explained, taking amidoxime type adsorbent as the example. For Japan where energy resources are scant, the uranium contained in seawater, which is estimated to be about 4.2 billion t, is the most luring important element. Uranium is contained in seawater is very low concentration of 3 ppb, and exists as anion complex salt. In 1960s, the Harwell Atomic Energy Research Establishment in UK found out that titanium oxide hydrate is the most promising as the adsorbent. Also a number of organic absorbents have been developed. In order to bring adsorbents in contact with seawater, pumping, ocean current and wave force are utilized. Adsorbents are in spherical, fiber and film forms, and held as fixed beds and fluidized beds. (Kako, I.) 48 refs

High-quality AlN films grown on chemical vapor-deposited graphene films

Directory of Open Access Journals (Sweden)

Chen Bin-Hao

2016-01-01

Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

CO adsorption on N2-precovered NaY faujasite: a FTIR analysis of the resulting adsorbed species.

Science.gov (United States)

Cairon, Olivier

2013-08-26

To productively complete the information regarding the reversible adsorption of a gas mixture on the micropores of cationic zeolites, the adsorption of the two gases N2 and CO on NaY faujasite is taken as a model case study. We analyze herein CO adsorption (77 K) on two distinct N2-precovered NaY sets (low and medium). We outline the continuous desorption of N2 adducts during CO admittance to full N2 desorption for the highest CO loadings. These features contrast with preceding results obtained for N2 loading on CO-precovered NaY. By comparing these results with the sole CO admission and combining both studies regarding the co-adsorption sets, we demonstrate the influence of the basic strength of the two gases regarding the nature of the surface-adsorbed species formed. We also propose and discuss a hypothesis regarding the formation of adsorbed mixed species having both N2 and CO as ligands. These new findings strengthen the statistical response of IR signatures as a helpful proposal for analyzing adsorbed species and their assignments. This survey completes the molecular understanding of gas-mixture adsorption that lacks experimental data to date. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The structure of n-alkane binary mixtures adsorbed on graphite

International Nuclear Information System (INIS)

Espeau, Philippe; White, John W.; Papoular, Robert J.

2005-01-01

The thermodynamics and structure of the surface adsorbed phase in binary C15-C16 and C15-C17 n-alkane mixtures confined in graphite pores have been studied by differential scanning calorimetry and small-angle X-ray scattering. The previously observed selective adsorption of the longer alkane for chain length differences greater than five carbon atoms is verified but reduced for chain length differences less than or equal to two. With a difference in chain length of one carbon atom, Vegard's law is followed for the melting points of the adsorbed mixture and the (0 2) d-spacing is a continuous function of the mole fraction x. With a two-carbon atom difference, samples aged for 1 week have a lamellar structure for which the entities A 1-x B x try to be commensurate with the substrate. The same samples aged for 1 month show a continuous parabolic x-dependence for both the melting points and the d-spacings. An explanation in terms of selective probability of adsorption is proposed based on crystallographic considerations

The structure of n-alkane binary mixtures adsorbed on graphite

Energy Technology Data Exchange (ETDEWEB)

Espeau, Philippe [Laboratoire de Chimie Physique et Minerale, Faculte de Pharmacie, Universite Rene Descartes-Paris V, F-75006 Paris (France)]. E-mail: philippe.espeau@univ-paris5.fr; White, John W. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); Papoular, Robert J. [Laboratoire Leon Brillouin, CEA-CEN Saclay, F-91191 Gif-sur-Yvette Cedex (France)

2005-12-15

The thermodynamics and structure of the surface adsorbed phase in binary C15-C16 and C15-C17 n-alkane mixtures confined in graphite pores have been studied by differential scanning calorimetry and small-angle X-ray scattering. The previously observed selective adsorption of the longer alkane for chain length differences greater than five carbon atoms is verified but reduced for chain length differences less than or equal to two. With a difference in chain length of one carbon atom, Vegard's law is followed for the melting points of the adsorbed mixture and the (0 2) d-spacing is a continuous function of the mole fraction x. With a two-carbon atom difference, samples aged for 1 week have a lamellar structure for which the entities A{sub 1-x}B {sub x} try to be commensurate with the substrate. The same samples aged for 1 month show a continuous parabolic x-dependence for both the melting points and the d-spacings. An explanation in terms of selective probability of adsorption is proposed based on crystallographic considerations.

Size-effect on stress behavior of the AlN/TiN film

International Nuclear Information System (INIS)

Chen, D.; Wang, Y.M.; Ma, X.L.

2009-01-01

The stress behavior of AlN/TiN superlattice film has been studied by means of a crystal-chemical atomic dynamics simulation based on first-principles calculations. The size-effects on stress behavior are demonstrated and discussed in detail. Stress behavior depends not only on AlN thickness but also on structural relaxation and strain distribution in the film. When the AlN thickness exceeds a critical one, the superlattice film is metastable. Stress behavior can be traced to the AlN/TiN interface structure and its variation with strain relaxation, which may reflect the main strain characteristics caused by AlN structural transformation in this film.

Structural characterisation of GaN and GaN:O thin films

International Nuclear Information System (INIS)

Granville, S.; Budde, F.; Koo, A.; Ruck, B.J.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; James, B.J.; Kennedy, V.J.; Markwitz, A.; Prince, K.E.

2005-01-01

In its crystalline form, the wide band-gap semiconductor GaN is of exceptional interest in the development of suitable materials for short wavelength optoelectronic devices. One of the barriers to its potential usefulness however is the large concentration of defects present even in MBE-grown material often due to the lattice mismatch of the GaN with common substrate materials. Calculations have suggested that GaN films grown with an amorphous structure retain many of the useful properties of the crystalline material, including the wide band-gap and a low density of states in the gap, and thus may be a suitable alternative to the single crystal GaN for a variety of applications. We have performed structural and compositional measurements on heavily disordered GaN thin films with and without measureable O and H concentrations grown using ion-assisted deposition. X-ray diffraction and x-ray absorption fine structure measurements show that stoichiometric films are composed of nanocrystallites of ∼3-4 nm in size and that GaN films containing O to 10 at % or greater are amorphous. Rutherford backscattering spectroscopy (RBS) was performed and nuclear reaction analysis (NRA) measurements were made to determine the elemental composition of the films and elastic recoil detection (ERD) detected the hydrogen concentrations. Secondary ion mass spectroscopy (SIMS) measurements were used to depth profile the films. X-ray photoelectron spectroscopy (XPS) measurements probed the bonding environment of the Ga in the films. (author). 2 figs., 1 tab

Density functional study of TaSin (n = 1-3, 12) clusters adsorbed to graphene surface

International Nuclear Information System (INIS)

Guo Ping; Zheng Lin; Zheng Jiming; Zhang Ruizhi; Yang Luna; Ren, Zhaoyu

2011-01-01

A plane-wave density functional theory (DFT) calculations have been performed to investigate structural and electronic properties of TaSi n (n = 1-3, 12) clusters supported by graphene surface. The resulting adsorption structures are described and discussed in terms of stability, bonding, and electron transfer between the cluster and the graphene. The TaSi n clusters on graphene surface favor their free-standing ground-state structures. Especially in the cases of the linear TaSi 2 and the planar TaSi 3 , the graphene surface may catalyze the transition of the TaSi n clusters from an isomer of lower dimensionality into the ground-state structure. The adsorption site and configuration of TaSi n on graphene surface are dominated by the interaction between Ta atom and graphene. Ta atom prefers to adsorb on the hollow site of graphene, and Si atoms tend to locate on the bridge site. Further, the electron transfer is found to proceed from the cluster to the surface for n = 1 and 2, while its direction reverses as n > 2. For the case of TaSi, chemisorption is shown to prevail over physisorption as the dominant mode of surface-adsorbate interaction by charge density analysis.

NbN thin films for superconducting radio frequency cavities

Science.gov (United States)

Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

2012-12-01

NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

NbN thin films for superconducting radio frequency cavities

International Nuclear Information System (INIS)

Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

2012-01-01

NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

Bandtail characteristics in InN thin films

International Nuclear Information System (INIS)

Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

2002-01-01

The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

In-plane conductance of thin films as a probe of surface chemical environment: Adsorbate effects on film electronic properties of indium tin oxide and gold

Science.gov (United States)

Swint, Amy Lynn

Changes in the in-plane conductance of conductive thin films are observed as a result of chemical adsorption at the surface. Reaction of the indium tin oxide (ITO) surface with Bronsted acids (bases) leads to increases (decreases) in its in-plane conductance as measured by a four-point probe configuration. The conductance varies monotonically with pH suggesting that the degree of surface protonation or hydroxylation controls the surface charge density, which in turn affects the width of the n-type depletion layer, and ultimately the in-plane conductance. Measurements at constant pH with a series of tetraalkylammonium hydroxide species of varying cation size indicate that surface dipoles also affect ITO conductance by modulating the magnitude of the surface polarization. Modulating the double layer with varying aqueous salt solutions also affects ITO conductance, though not to the same degree as strong Bronsted acids and bases. Solvents of varying dielectric constant and proton donating ability (ethanol, dimethylformamide) decrease ITO conductance relative to H2O. In addition, changing solvent gives rise to thermally-derived conductance transients, which result from exothermic solvent mixing. The self-assembly of alkanethiols at the surface increases the conductance of ITO films, most likely through carrier population effects. In all cases examined the combined effects of surface charge, adsorbed dipole layer magnitude and carrier injection are responsible for altering the ITO conductance. Besides being directly applicable to the control of electronic properties, these results also point to the use of four-point probe resistance measurements in condensed phase sensing applications. Ultrasensitive conductance-based gas phase sensing of organothiol adsorption to gold nanowires is accomplished with a limit of detection in the 105 molecule range. Further refinement of the inherently low noise resistance measurement may lead to observation of single adsorption events at

Effect of adsorbed/intercalated anionic dyes into the mechanical properties of PVA: layered zinc hydroxide nitrate nanocomposites.

Science.gov (United States)

Marangoni, Rafael; Mikowski, Alexandre; Wypych, Fernando

2010-11-15

Zinc hydroxide nitrate (ZHN) was adsorbed with anions of blue dyes (Chicago sky blue, CSB; Evans blue, EB; and Niagara blue, NB) and intercalated with anions of orange dyes (Orange G, OG; Orange II, OII; methyl orange, MO). Transparent, homogeneous and colored nanocomposite films were obtained by casting after dispersing the pigments (dye-intercalated/adsorbed into LHSs) into commercial poly(vinyl alcohol) (PVA). The films were characterized by XRD, UV-Vis spectroscopy, and mechanical testing. The mechanical properties of the PVA compounded with the dye-intercalated/adsorbed ZHN were evaluated, and reasonable increases in Young's modulus and ultimate tensile strength were observed, depending on the amount and choice of layered filler. These results demonstrate the possibility of using a new class of layered hydroxide salts intercalated and adsorbed with anionic dyes to prepare multifunctional polymer nanocomposite materials. Copyright © 2010 Elsevier Inc. All rights reserved.

Chemical characterization of a marine conditioning film

Digital Repository Service at National Institute of Oceanography (India)

Garg, A.; Jain, A.; Bhosle, N

Biology 2, 228-235. Hung, C.C., Guo, L., Santschi, P.H., Quiroz, N.A., Haye, J.M., 2003. Distribution of carbohydrate species in the Gulf of Mexico. Marine Chemistry 18, 119-135. Little, B.J., Zsolnay, Z.A., 1985. Chemical fingerprinting of adsorbed...-110. Bhosle, N.B., Garg, A., Fernandes, L., Citon, P., 2005. Dynamics of amino acids in the conditioning film developed on glass panels immersed in surface seawaters of the Dona Paula Bay. Biofouling 21 (2), 99-107. Borch, N.H., Kirchmen, D.L., 1997...

AlN piezoelectric films for sensing and actuation

NARCIS (Netherlands)

Tran, A.T.

2014-01-01

Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique is used to deposit the AlN thin films and process parameters are optimized to obtain good crystallinity and high c-axis orientation films. A CMOS compatible

THz spectroscopy on superconducting NbN thin films

Energy Technology Data Exchange (ETDEWEB)

Daschke, Lena; Pracht, Uwe S.; Dressel, Martin; Scheffler, Marc [1. Physikalisches Institut, Universitaet Stuttgart (Germany); Ilin, Konstantin S.; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, Karlsruher Institut fuer Technologie (Germany)

2015-07-01

Epitaxial thin-film niobium nitride (NbN) is a conventional BCS superconductor. In presence of strong disorder, however, electronic inhomogeneities appear, which is not fully understood yet. To obtain a better insight into the physics of such disordered materials, studies on model systems such as structurally tailored films might be useful. Furthermore, disordered NbN films are used for single-photon detection devices, whose proper performance depends on a profound understanding of the superconducting properties. The studied NbN films have a T{sub c} ranging from 10 to 15 K and the superconducting energy gap is easily accessible with THz spectroscopy (0.4 - 5.6 meV). We investigate thin films of NbN sputtered on a sapphire substrate. With a Mach-Zehnder interferometer we measure the amplitude and phase shift of radiation transmitted through the thin-film sample. From there we can determine the real and imaginary parts of the optical conductivity. These results give information about the energy gap, Cooper pair density, and quasiparticle dynamics, including the temperature evolution of these quantities. We found that a film with 10 nm thickness roughly follows the BCS behavior, as expected. We will present results of our measurements on several different NbN samples.

Energetics of a Li Atom adsorbed on B/N doped graphene with monovacancy

International Nuclear Information System (INIS)

Rani, Babita; Jindal, V.K.; Dharamvir, Keya

2016-01-01

We use density functional theory (DFT) to study the adsorption properties and diffusion of Li atom across B/N-pyridinic graphene. Regardless of the dopant type, B atoms of B-pyridinic graphene lose electron density. On the other hand, N atoms (p-type dopants) have tendency to gain electron density in N-pyridinic graphene. Higher chemical reactivity and electronic conductivity of B/N-pyridinic graphene are responsible for stronger binding of Li with the substrates as compared to pristine graphene. The binding energy of Li with B/N-pyridinic graphene exceeds the cohesive energy of bulk Li, making it energetically unfavourable for Li to form clusters on these substrates. Li atom gets better adsorbed on N-pyridinic graphene due to an additional p-p hybridization of the orbitals while Li on B-pyridinic prefers the ionic bonding. Also, significant distortion of N-pyridinic graphene upon Li adsorption is a consequence of the change in bonding mechanism between Li atom and the substrate. Our results show that bonding character and hence binding energies between Li and graphene can be tuned with the help of B/N doping of monovacancy defects. Further, the sites for most stable adsorption are different for the two types of doped and defective graphene, leading to greater Li uptake capacity of B-pyridinic graphene near the defect. In addition, B-pyridinic graphene offering lower diffusion barrier, ensures better Li kinetics. Thus, B-pyridinic graphene presents itself as a better anode material for LIBs as compared to N-pyridinic graphene. - Graphical abstract: Adsorption and diffusion of Li atom across the B/N doped monovacancy graphene is studied using ab-initio DFT calculations. Our results show that bonding mechanism and binding of Li with graphene can be tuned with the help of N/B doping of defects. Also, B-pyridinic graphene presents itself as a better anode material for lithium ion batteries as compared to N-pyridinic graphene. Display Omitted - Highlights: • Density

Energetics of a Li Atom adsorbed on B/N doped graphene with monovacancy

Energy Technology Data Exchange (ETDEWEB)

Rani, Babita, E-mail: babitabaghla15@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Department of Physics, Punjabi University, Patiala 147002 (India); Jindal, V.K. [Department of Physics, Panjab University, Chandigarh 160014 (India); Dharamvir, Keya, E-mail: keya@pu.ac.in [Department of Physics, Panjab University, Chandigarh 160014 (India)

2016-08-15

We use density functional theory (DFT) to study the adsorption properties and diffusion of Li atom across B/N-pyridinic graphene. Regardless of the dopant type, B atoms of B-pyridinic graphene lose electron density. On the other hand, N atoms (p-type dopants) have tendency to gain electron density in N-pyridinic graphene. Higher chemical reactivity and electronic conductivity of B/N-pyridinic graphene are responsible for stronger binding of Li with the substrates as compared to pristine graphene. The binding energy of Li with B/N-pyridinic graphene exceeds the cohesive energy of bulk Li, making it energetically unfavourable for Li to form clusters on these substrates. Li atom gets better adsorbed on N-pyridinic graphene due to an additional p-p hybridization of the orbitals while Li on B-pyridinic prefers the ionic bonding. Also, significant distortion of N-pyridinic graphene upon Li adsorption is a consequence of the change in bonding mechanism between Li atom and the substrate. Our results show that bonding character and hence binding energies between Li and graphene can be tuned with the help of B/N doping of monovacancy defects. Further, the sites for most stable adsorption are different for the two types of doped and defective graphene, leading to greater Li uptake capacity of B-pyridinic graphene near the defect. In addition, B-pyridinic graphene offering lower diffusion barrier, ensures better Li kinetics. Thus, B-pyridinic graphene presents itself as a better anode material for LIBs as compared to N-pyridinic graphene. - Graphical abstract: Adsorption and diffusion of Li atom across the B/N doped monovacancy graphene is studied using ab-initio DFT calculations. Our results show that bonding mechanism and binding of Li with graphene can be tuned with the help of N/B doping of defects. Also, B-pyridinic graphene presents itself as a better anode material for lithium ion batteries as compared to N-pyridinic graphene. Display Omitted - Highlights: • Density

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

Interactions between adsorbed macromolecules : measurements on emulsions and liquid films

NARCIS (Netherlands)

Vliet, van T.

1977-01-01

The aim of this study was to gain more insight into the factors, determining the inter- and intramolecular interactions between adsorbed macromolecules. To that end several experimental and theoretical approaches were followed, using well-defined systems. It was shown that these

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

Science.gov (United States)

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

Ecological applications of the irradiated adsorbents

International Nuclear Information System (INIS)

Tusseyev, T.

2004-01-01

Full text: In our previous works it was shown that after irradiation some adsorbents gain new interesting properties such as increasing (or decreasing) of their adsorption capacity, selectivity in relation to some gases, change of chemical bounds of gas molecules with adsorbent surface as well as other properties. We investigated a lot of adsorbents with semiconducting and dielectric properties. A high temperature superconductor was investigated also. Adsorbents were irradiated by ultraviolet (UV) and gamma - radiation, reactor (n.γ) - radiation, α-particles (E=40-50 MeV), protons ( E=30 MeV), and also He-3 ions (E-29-60 MeV). The following techniques were used: volumetric (manometrical), mass-spectrometer and IR spectroscopic methods, and also method of electronic - paramagnetic resonance (spin paramagnetic resonance) The obtained results allow to speak about creation of new adsorbents for gas purification (clearing) from harmful impurities, gas selection into components, an increasing of adsorbing surface. Thus one more advantage of the irradiated adsorbents is that they have 'memory effect', i.e. they can be used enough long time after irradiation. In laboratory conditions we built the small-sized adsorptive pump on the basis of the irradiated zeolites which are capable to work in autonomous conditions. It was found, that some of adsorbents after irradiation gain (or lose) selectivity in relation to definite gases. So, silica gel, which one in initial state does not adsorb hydrogen, after gamma irradiation it becomes active in relation to hydrogen. Some of rare earths oxides also show selectivity in relation to hydrogen and oxygen depending on a type of irradiation. Thus, it is possible to create different absorbents, depending on a solved problem, using a way or selection of adsorbents, either of radiation type and energy, as a result obtained adsorbents can be used for various ecological purposes

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

Science.gov (United States)

Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

2015-11-14

Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

The state of physically adsorbed substances in microporous adsorbents

International Nuclear Information System (INIS)

Fomkin, A.A.

1987-01-01

Xe, Kr, Ar, CF 3 Cl, CH 4 adsorption in NaX microporous zeolite of 0.98 Na 2 OxAl 2 O 3 x2.36SiO 2 x0.02H 2 O is studied. Some properties of adsorbates (density, coefficients of expansion, enthalpy, heat capacity) are determined and discussed. The adsorbate in the microporous adsorbent is shown to be a particular state of a substance. Liniarity of adsorption isosteres and sharp changes during isosteric heat capacity of the adsorbate points to the fact that in microporous adsorbents phase transformations of the second type are possible

Investigation of A-3 adsorbent-ditolylmethane two-phase system

International Nuclear Information System (INIS)

Ermakov, V.A.; Benderskaya, O.S.

1988-01-01

Compatibility of A-3 adsorbent, produced on the basis of palygoskite clay, with organic coolant of nuclear reactors-ditolylmethane (DTM)- and the possibility to use the given adsorbent for DTM purification from surfactant impurities are investigated. Compatibility of the adsorbent with DTM was evaluated by the concentration of its constituents in liquid phase. Sufactant adsorption was observed by the change in acid number of coolant, optical density at λ=396 nm and adsorbate mass in the adsorbent. From spent adsorbent the coolant was washed out by n-heptane, and the adsorbate - by methylene chloride, othanol and water in succession. On the basis of the results obtained the conclusion is made that A3 possesses a high chemical stability in DTM medium, i.e. it is compatible with DTM and can be used for its purification from surfactant impurities sorbed on heat-transferring surface

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

Science.gov (United States)

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

Multilayer TiC/TiN diffusion barrier films for copper

International Nuclear Information System (INIS)

Yoganand, S.N.; Raghuveer, M.S.; Jagannadham, K.; Wu, L.; Karoui, A.; Rozgonyi, G.

2002-01-01

TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated by transmission electron microscopy for microstructure and by deep level transient spectroscopy (DLTS) for diffusion barrier against copper. TiN thin films deposited on Si substrates at a substrate temperature of 600 deg. C were textured, and TiC thin films deposited at the same temperature were polycrystalline. TiC/TiN multilayer films also showed the same characteristics with the formation of an additional interaction layer. The diffusion barrier characteristics of the TiC/TiN/Si were determined by DLTS and the results showed that the films completely prevented diffusion of copper into Si

Surface chemistry and electronic structure of nonpolar and polar GaN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

2015-08-01

Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

Equilibrium helium film in the thick film limit

International Nuclear Information System (INIS)

Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

2003-01-01

For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

Preparation of ZnO:N films by radical beam gettering epitaxy

International Nuclear Information System (INIS)

Rogozin, I. V.

2007-01-01

ZnO:N epitaxial films are obtained by radical beam gettering epitaxy. The properties of the films are studied using X-ray diffraction, atomic-force microscopy, secondary-ion mass spectroscopy, and photoluminescence. A narrow (002) peak is observed in the X-ray diffraction spectra, which indicates that the ZnO:N films are oriented along the c axis. Secondary-ion mass spectroscopy indicates that N is present in the ZnO films. In the low-energy luminescence spectrum of the ZnO:N films, a peak at 3.31 eV is observed. This peak is presumably attributed to the exciton bound at the neutral acceptor N O . The postannealing of the ZnO:N films was carried out in atomic oxygen. The nature of the donor-acceptor (3.23 eV) and green (2.56 eV) luminescence bands is discussed

Growth of epitaxial (Sr, Ba){sub n+1}Ru{sub n}O{sub 3n}P+{sub 1}films

Energy Technology Data Exchange (ETDEWEB)

Schlom, D.G.; Knapp, S.B.; Wozniak, S. [Department of Materials Science and Engineering, Penn State University, University Park, PA (United States); Zou, L.N.; Park, J.; Liu, Y. [Department of Physics, Penn State University, University Park, PA (United States); Hawley, M.E.; Brown, G.W. [Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM (United States); Dabkowski, A.; Dabkowska, H.A. [Institute of Materials Research, McMaster University, Hamilton, Ontario (Canada); Uecker, R.; Reiche, P. [Institute of Crystal Growth, Berlin (Germany)

1997-12-01

We have grown epitaxial (Sr,Ba){sub n+1}Ru{sub n}O{sub 3n+1} films, n = 1, 2 and {infinity}, by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase-pure films have been mapped out. Resistivity versus temperature measurements show that both a-axis and c-axis films of Sr{sub 2}RuO{sub 4} are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD. (author)

Neutron Scattering Study of Nitrogen Adsorbed on Basal Plane Oriented Graphite

DEFF Research Database (Denmark)

Kjems, Jørgen; Passell, L.; Taub, H.

1976-01-01

Thermal-neutron scattering has been used to investigate the structure of nitrogen films adsorbed on Grafoil, a basal-plane-oriented graphite. Diffraction scans were made at coverages between 1/3 of a monolayer and 7/4 monolayers over a temperature range from 10 to 90 K. The observed line shapes...

Adsorption of UO2+2 by polyethylene adsorbents with amidoxime, carboxyl, and amidoxime/carboxyl group

International Nuclear Information System (INIS)

Choi, Seong-Ho; Nho, Young Chang

2000-01-01

The polyethylene (PE) adsorbents were prepared by a radiation-induced grafting of acrylonitrile (AN), acrylic acid (AA), and the mixture of AN/AA onto PE film, and by subsequent amidoximation of cyano groups of poly-AN graft chains. With an increase of AA composition in AN/AA monomer mixture, the water uptake of the grafted polyethylene film increased. In AN/AA mixture, the maximum adsorption of UO 2+ 2 was observed in the adsorbent with a ratio of AN/AA (50/50, mol%) in copolymer. The amidoxime, carboxyl, and amidoxime/carboxyl groups onto PE acted as a chelating site for the selected UO 2+ 2 . The complex structure of polyethylene with three functional groups and UO 2+ 2 was confirmed by Fourier Transform Infrared (FTIR) spectroscopy. (author)

Chitin Adsorbents for Toxic Metals: A Review

Directory of Open Access Journals (Sweden)

Ioannis Anastopoulos

2017-01-01

Full Text Available Wastewater treatment is still a critical issue all over the world. Among examined methods for the decontamination of wastewaters, adsorption is a promising, cheap, environmentally friendly and efficient procedure. There are various types of adsorbents that have been used to remove different pollutants such as agricultural waste, compost, nanomaterials, algae, etc., Chitin (poly-β-(1,4-N-acetyl-d-glucosamine is the second most abundant natural biopolymer and it has attracted scientific attention as an inexpensive adsorbent for toxic metals. This review article provides information about the use of chitin as an adsorbent. A list of chitin adsorbents with maximum adsorption capacity and the best isotherm and kinetic fitting models are provided. Moreover, thermodynamic studies, regeneration studies, the mechanism of adsorption and the experimental conditions are also discussed in depth.

Electrochemical formation of AlN in molten LiCl-KCl-Li{sub 3}N systems

Energy Technology Data Exchange (ETDEWEB)

Goto, Takuya [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)]. E-mail: goto@energy.kyoto-u.ac.jp; Iwaki, Takayuki [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)

2005-01-30

Electrochemical formation of aluminum nitride was investigated in molten LiCl-KCl-Li{sub 3}N systems at 723 K. When Al was anodically polarized at 1.0 V (versus Li{sup +}/Li), oxidation of nitride ions proceeded to form adsorbed nitrogen atoms, which reacted with the surface to form AlN film. The obtained nitrided film had a thickness of sub-micron order. The obtained nitrided layer consisted of two regions; the outer layer involving AlN and aluminum oxynitride and the inner layer involving metallic Al and AlN. When Al electrode was anodically polarized at 2.0 V, anodic dissolution of Al electrode occurred to give aluminum ions, which reacted with nitride ions in the melt to produce AlN particles (1-5 {mu}m of diameter) of wurtzite structure.

Investigation of blue luminescence in Mg doped AlN films

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

2015-02-05

Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

Water surface coverage effects on reactivity of plasma oxidized Ti films

International Nuclear Information System (INIS)

Pranevicius, L.; Pranevicius, L.L.; Vilkinis, P.; Baltaragis, S.; Gedvilas, K.

2014-01-01

Highlights: • The reactivity of Ti films immersed in water vapor plasma depends on the surface water coverage. • The adsorbed water monolayers are disintegrated into atomic constituents on the hydrophilic TiO 2 under plasma radiation. • The TiO 2 surface covered by water multilayer loses its ability to split adsorbed water molecules under plasma radiation. - Abstract: The behavior of the adsorbed water on the surface of thin sputter deposited Ti films maintained at room temperature was investigated in dependence on the thickness of the resulting adsorbed water layer, controllably injecting water vapor into plasma. The surface morphology and microstructure were used to characterize the surfaces of plasma treated titanium films. Presented experimental results showed that titanium films immersed in water vapor plasma at pressure of 10–100 Pa promoted the photocatalytic activity of overall water splitting. The surfaces of plasma oxidized titanium covered by an adsorbed hydroxyl-rich island structure water layer and activated by plasma radiation became highly chemically reactive. As water vapor pressure increased up to 300–500 Pa, the formed water multilayer diminished the water oxidation and, consequently, water splitting efficiency decreased. Analysis of the experimental results gave important insights into the role an adsorbed water layer on surface of titanium exposed to water vapor plasma on its chemical activity and plasma activated electrochemical processes, and elucidated the surface reactions that could lead to the split of water molecules

Effect of filling surface-treated pyrolytic char on resistivity of rubber films

Directory of Open Access Journals (Sweden)

Pattraporn Yamkaya

2015-03-01

Full Text Available In this research, natural rubber (NR films filled with pyrolytic tire char, carbon black N234 and N330 were compared for their electrical resistivity. The filler loading was varied to be 5, 10, 15, 20 and 25% of dry rubber content. The effect of surfactant which is 2 %w/v sodium dodecyl sulfate (SDS was also investigated. In the experiments, it was necessary to disperse the pyrolytic char in ethyl alcohol while disperse carbon black (CB in ammonium hydroxide solution prior to mixing with the rubber latex and the filled NR film was prepared by casting the mixture on a plate. It was found that increasing the amount of pyrolytic char in the NR film could lower its resistivity. The surfactant, SDS, could help better dispersion of both CB and pyrolytic char, thereby decreasing the resistivity. In a separate experiment where hexane vapor was absorbed in NR film without surfactant, in the first 30 seconds, the rate of increasing resistivity of the CB-filled film was not seen as clearly as that of pyrolytic-char-filled film. For the films with surfactant, the slow increase in resistivity of the NR films filled with N330 and pyrolytic char during adsorbing hexane vapor was observed.

Experimental studies of N~+ implantation into CVD diamond thin films

Institute of Scientific and Technical Information of China (English)

辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

1997-01-01

The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

Ultrathin NbN Films for Superconducting Single-Photon Detectors

International Nuclear Information System (INIS)

Slysz, W.; Guziewicz, M.; Borysiewicz, M.

2011-01-01

We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al 2 O 3 and Si wafers, and SiO 2 and Si 3 N 4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850 o C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films. (author)

Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Sun Kyu, E-mail: skim@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Pham, Vuong-Hung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Chong-Hyun [Department of Food Science, Cornell University, Ithaca, NY 14853 (United States)

2012-07-01

Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.

Evolution of superconducting properties with disorder in epitaxial NbN films

International Nuclear Information System (INIS)

Chockalingam, S P; Chand, Madhavi; Jesudasan, John; Raychaudhuri, Pratap; Tripathi, Vikram

2009-01-01

NbN is a conventional BCS superconductor in which disorder can be tuned from moderately clean limit to dirty limit without affecting its epitaxial nature. We studied the superconducting properties of epitaxial NbN films of different disorder characterized by k F l ranging from 8.77 to 2.56 through the transport measurements. Using reactive magnetron sputtering NbN films of different disorder are deposited by varying the sputtering power and amount of N 2 in Ar:N 2 mixture of sputtering gas. The disorder parameter k F l is obtained from the carrier density (n) and the resistivity (ρ) of the films. NbN films with higher disorder have lower transition temperature (T c ) and larger resistivity which decreases with decreasing disorder. The carrier density determined from Hall measurements show that highly disordered films have lower carrier density and vice versa. Our studies show that NbN is a good system to investigate the effects of disorder on superconductivity where the superconducting properties evolve with the disorder in thin films.

Modeling adsorption: Investigating adsorbate and adsorbent properties

Science.gov (United States)

Webster, Charles Edwin

1999-12-01

Surface catalyzed reactions play a major role in current chemical production technology. Currently, 90% of all chemicals are produced by heterogeneously catalyzed reactions. Most of these catalyzed reactions involve adsorption, concentrating the substrate(s) (the adsorbate) on the surface of the solid (the adsorbent). Pore volumes, accessible surface areas, and the thermodynamics of adsorption are essential in the understanding of solid surface characteristics fundamental to catalyst and adsorbent screening and selection. Molecular properties such as molecular volumes and projected molecular areas are needed in order to convert moles adsorbed to surface volumes and areas. Generally, these molecular properties have been estimated from bulk properties, but many assumptions are required. As a result, different literature values are employed for these essential molecular properties. Calculated molar volumes and excluded molecular areas are determined and tabulated for a variety of molecules. Molecular dimensions of molecules are important in the understanding of molecular exclusion as well as size and shape selectivity, diffusion, and adsorbent selection. Molecular dimensions can also be used in the determination of the effective catalytic pore size of a catalyst. Adsorption isotherms, on zeolites, (crystalline mineral oxides) and amorphous solids, can be analyzed with the Multiple Equilibrium Analysis (MEA) description of adsorption. The MEA produces equilibrium constants (Ki), capacities (ni), and thermodynamic parameters (enthalpies, ΔHi, and entropies, ΔSi) of adsorption for each process. Pore volumes and accessible surface areas are calculated from the process capacities. Adsorption isotherms can also be predicted for existing and new adsorbate-adsorbent systems with the MEA. The results show that MEA has the potential of becoming a standard characterization method for microporous solids that will lead to an increased understanding of their behavior in gas

Polymeric ionic liquid based on magnetic materials fabricated through layer-by-layer assembly as adsorbents for extraction of pesticides.

Science.gov (United States)

He, Lijun; Cui, Wenhang; Wang, Yali; Zhao, Wenjie; Xiang, Guoqiang; Jiang, Xiuming; Mao, Pu; He, Juan; Zhang, Shusheng

2017-11-03

In this study, layer-by-layer assembly of polyelectrolyte multilayer films on magnetic silica provided a convenient and controllable way to prepare polymeric ionic liquid-based magnetic adsorbents. The resulting particles were characterized by Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, and magnetic measurements. The data showed that the magnetic particles had more homogeneous spherical shapes with higher saturation magnetization when compared to those obtained by free radical polymerization method. This facilitated the convenient collection of magnetic particles, with higher extraction repeatability. The extraction performance of the multilayer polymeric ionic liquid-based adsorbents was evaluated by magnetic solid-phase extraction of four pesticides including quinalphos, fenthion, phoxim, and chlorpropham. The data suggested that the extraction efficiency depended on the number of layers in the film. The parameters affecting the extraction efficiency were optimized, and good linearity ranging from 2 to 250μgL -1 was obtained with correlation coefficients of 0.9994-0.9998. Moreover, the proposed method presented low limit of detection (0.5μgL -1 , S/N=3) and limit of quantification (1.5μgL -1 , S/N=10), and good repeatability expressed by the relative standard deviation (2.0%-4.6%, n=5). The extraction recoveries of four pesticides were found to range from 58.9% to 85.8%. The reliability of the proposed method was demonstrated by analyzing environmental water samples, and the results revealed satisfactory spiked recovery, relative standard deviation, and selectivity. Copyright © 2017 Elsevier B.V. All rights reserved.

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Energy Technology Data Exchange (ETDEWEB)

Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

2009-06-15

In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Infrared reflectance measurement for InN thin film characterization

International Nuclear Information System (INIS)

Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

2006-01-01

Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

Science.gov (United States)

Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

2018-03-01

Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

Tuning Surface Energy Landscapes in Metallic Quantum Films using Alkali Adsorbates

Science.gov (United States)

Khajetoorians, Alexander; Qin, Shengyong; Zhu, Wenguang; Eisele, Holger; Zhang, Zhenyu; Shih, Chih-Kang

2008-03-01

Quantum confinement shows a strong interplay with growth and kinetics in thin metal systems where the Fermi wavelength has a special relationship to the surface normal lattice constant. In the case of Pb/Si(111) systems, this relationship reveals an interesting thickness-dependent bilayer oscillation in the density of states and surface energy up to a phase. In this paper, we report on a novel effect: tuning of the energy landscape of a flat-top quantum Pb mesa using Cs adsorbates. Using STM/STS, we show that depositing Cs adsorbates on a thin Pb mesa promotes quantum stable Pb nanoislands on preferentially unstable thicknesses. Thickness-dependent nanoisland densities show a strong bilayer oscillation correlating with quantum stability. By modifying the Cs coverage on the mesa surface, we can tune the lateral size distribution of the nanoislands and the overall amplitude of the island density oscillation. Nanoisland formation is linked to a step decoration of Cs adatoms along the step edge of the nanoisland.

Acrylonitrile-methyl Methacrylate Copolymer Films Containing Microencapsulated n-Octadecane

Institute of Scientific and Technical Information of China (English)

LI Jun; HAN Na; ZHANG Xing-xiang

2006-01-01

Acrylonitrile-methyl methacrylate copolymer was synthesized in aqueous solution by Redox. The copolymer was mixed with 10 - 40 wt% of microencapsulated n-octadecane (MicroPCMs) in water. Copolymer films containing MicroPCMs were cast at room temperature in N, N-Dimethylformamide solution. The copolymer of acrylonitrile-methyl methacrylate and the copolymer films containing MicroPCMs were characterized by using Fourier Transform Infrared Spectroscopy (FTIR), Differential Scanning Calorimetry (DSC), Thermogravimetric Analyzer (TG), X-ray Diffrac tion (XRD) and Scanning Electron Microscopy (SEM), etc.The microcapsules in the films are evenly distributed in the copolymer matrix. The heat-absorbing temperatures and heat-evolving temperatures of the films are almost the same as that of the MicroPCMs, respectively, and fluctuate in a slight range. In addition, the enthalpy efficiency of MicroPCMs rises with the contents of MicroPCMs increasing.The crystallinity of the film increases with the contents of MicroPCMs increasing.

Production and characterization of Si-N films obtained by r.f. magnetron sputtering

International Nuclear Information System (INIS)

Oliveira, A.; Cavaleiro, A.; Vieira, M.T.

1993-01-01

Si-N films were deposited by sputtering from an Si 3 N 4 target with different deposition pressures and negative substrate bias. The films were amorphous and showed a ''featureless'' morphology. A high oxygen content was detected in unbiased films. For these films the Si/N ratio was very high compared with the target composition, whereas for biased films the opposite was observed. Si-N films presented cohesive failures for loads as high as 21 N and adhesive failure at 45 N when they were analysed by scratch test. Very high hardness (45 GPa) was obtained, particularly for biased films. Unbiased films were softer, which is attributed to the formation of silicon oxide and/or to a lower compressive stress level. (orig.)

Structure of AlN films deposited by magnetron sputtering method

Directory of Open Access Journals (Sweden)

Nowakowska-Langier K.

2015-09-01

Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of film polarities on InN growth by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xu, K.; Yoshikawa, A.

2003-01-01

Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

Plasma-deposited a-C(N) H films

CERN Document Server

Franceschini, D E

2000-01-01

The growth behaviour, film structure and mechanical properties of plasma-deposited amorphous hydrogenated carbon-nitrogen films are shortly reviewed. The effect of nitrogen-containing gas addition to the deposition to the hydrocarbon atmospheres used is discussed, considering the modifications observed in the chemical composition growth kinetics, carbon atom hybridisation and chemical bonding arrangements of a-C(N):H films. The overall structure behaviour is correlated to the variation of the mechanical properties.

A theoretical study of adsorbate-adsorbate interactions on Ru(0001)

DEFF Research Database (Denmark)

Mortensen, Jens Jørgen; Hammer, Bjørk; Nørskov, Jens Kehlet

1998-01-01

the barrier for dissociation, whereas S will increase it. The interaction with alkali atoms is mainly of an electrostatic nature. The poisoning by S is due to two kinds of repulsive interactions: a Pauli repulsion and a reduced covalent bond strength between the adsorbate and the surface d-electrons. In order...... to investigate these different interactions in more detail, we look at three different species (N atoms, and terminally bonded N(2) and CO) and use them as probes to study their interaction with two modifier atoms (Na and S). The two modifier atoms have very different properties, which allows us to decouple...

Thin NbN film structures on SOI for SNSPD

Energy Technology Data Exchange (ETDEWEB)

Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

2012-07-01

Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

Infrared reflectance of GaN films grown on Si(001) substrates

International Nuclear Information System (INIS)

Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li

2001-01-01

GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics

Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

Science.gov (United States)

Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

2018-05-01

Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

Lattice damage induced by Tb-implanted AlN crystalline films

International Nuclear Information System (INIS)

Lu Fei; Hu Hui; Rizzi, A.

2002-01-01

AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 deg. C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution

Comparing dissolved reactive phosphorus measured by DGT with ferrihydrite and titanium dioxide adsorbents

DEFF Research Database (Denmark)

Panther, Jared G.; Teasdale, Peter R.; Bennett, William W.

2011-01-01

Two adsorbents (Metsorb and ferrihydrite) used in binding layers with the diffusive gradients in a thin film technique were evaluated for the measurement of dissolved reactive phosphorous (DRP) in synthetic and natural waters. Possible interferences were investigated with Cl- (up to 1.35molL-1) a...

Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

DEFF Research Database (Denmark)

Pécz, Béla; Tóth, Lajos; Barna, Árpád

2013-01-01

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer; Caracterizacao e obtencao de filmes finos de N,N,N-trimetil quitosana e heparina atraves da tecnica layer-by-layer

Energy Technology Data Exchange (ETDEWEB)

NONE

2011-07-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through {sup 1}H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

Microwave plasma induced surface modification of diamond-like carbon films

Science.gov (United States)

Rao Polaki, Shyamala; Kumar, Niranjan; Gopala Krishna, Nanda; Madapu, Kishore; Kamruddin, Mohamed; Dash, Sitaram; Tyagi, Ashok Kumar

2017-12-01

Tailoring the surface of diamond-like carbon (DLC) film is technically relevant for altering the physical and chemical properties, desirable for useful applications. A physically smooth and sp3 dominated DLC film with tetrahedral coordination was prepared by plasma-enhanced chemical vapor deposition technique. The surface of the DLC film was exposed to hydrogen, oxygen and nitrogen plasma for physical and chemical modifications. The surface modification was based on the concept of adsorption-desorption of plasma species and surface entities of films. Energetic chemical species of microwave plasma are adsorbed, leading to desorbtion of the surface carbon atoms due to energy and momentum exchange. The interaction of such reactive species with DLC films enhanced the roughness, surface defects and dangling bonds of carbon atoms. Adsorbed hydrogen, oxygen and nitrogen formed a covalent network while saturating the dangling carbon bonds around the tetrahedral sp3 valency. The modified surface chemical affinity depends upon the charge carriers and electron covalency of the adsorbed atoms. The contact angle of chemically reconstructed surface increases when a water droplet interacts either through hydrogen or van dear Waals bonding. These weak interactions influenced the wetting property of the DLC surface to a great extent.

Desorption of uranium from titanium-activated carbon composite adsorbent with acidic eluent, 2

International Nuclear Information System (INIS)

Hirotsu, Takahiro; Fujii, Ayako; Sakane, Kohji; Katoh, Shunsaku; Sugasaka, Kazuhiko

1984-01-01

The desorption of uranium from the granular titanium-activated carbon composite adsorbent (concentration of uranium: 25.5 mg/1-Ad), which adsorbed uranium from natural sea water, was examined by the column process with acidic eluent at room temperature. The column operation was able to be carried out without destruction of the granular adsorbent by the generation of the carbon dioxide, and free from disturbance of the eluent flow by precipitate of calcium sulfate dihydrate with sulfuric acid eluent. The amount of acid consumption by the adsorbent was 0.87 eq/1-Ad. The alkaline earth metals were eluted in the range of elution volume below 2 1/1-Ad, whereas uranium, iron, and titanium were eluted above 2 1/1-Ad. Therefore, uranium was separable from the alkaline earth metals which were adsorbed in the most quantity in the adsorbent. In the range of elution volume 2 to 12 1/1-Ad, the percentage of desorbed uranium and the concentration ratio of uranium were 80 %, 680 with 0.5 N sulfuric acid, and 59 %, 490 with 0.5 N hydrochloric acid, respectively. The percentage of dissolved titanium (DTI) was 0.3 % with 0.5 N sulfuric acid, 0.26 % with 0.5 N hydrochloric acid in the same range. (author)

Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

KAUST Repository

Wei, Binbin

2018-03-18

Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

Science.gov (United States)

Wei, Binbin; Mei, Gui; Liang, Hanfeng; Qi, Zhengbing; Zhang, Dongfang; Shen, Hao; Wang, Zhoucheng

2018-05-01

Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm-2 at 1.0 mA cm-2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm-3 and a maximum power density of 6.6 W cm-3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

Berkovich Nanoindentation on AlN Thin Films

Directory of Open Access Journals (Sweden)

Jian Sheng-Rui

2010-01-01

Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

IR spectroscopy studies of silver and copper nano-films

Energy Technology Data Exchange (ETDEWEB)

Meng, Fanzhen

2007-01-10

The present work is focused on the infrared optical properties of thin Ag and Cu films grown on MgO(001) and the Surface-Enhanced Infrared Absorption (SEIRA) of CO on these metal films. During both the deposition of the metal films onto MgO(001) and gas exposure to the metal films at low temperatures (<100 K) in Ultra High Vacuum (UHV), infrared spectra were captured in situ in transmission or reflection geometry. Afterwards the surface morphology of the films was examined ex situ by atomic force microscopy (AFM). For the first time, an infrared reflectance minimum was found during the metal film growth. The infrared optical properties of some films can be described by the Drude-type model or the Effective Medium Model. The Ag films show different surface morphologies at different substrate temperatures and at different final thicknesses. Also the SEIRA of CO adsorbed on Ag films is strongly related to the surface morphologies. The Cu films prepared at room temperature show island like surface morphology. SEIRA of CO adsorbed on Cu films shows differences depending on the Cu island size. (orig.)

Interplay of adsorbate-adsorbate and adsorbate-substrate interactions in self-assembled molecular surface nanostructures

DEFF Research Database (Denmark)

Schnadt, Joachim; Xu, Wei; Vang, Ronnie Thorbjørn

2010-01-01

a large tolerance to monatomic surface steps on the Ag(110) surface. The observed behaviour is explained in terms of strong intermolecular hydrogen bonding and a strong surface-mediated directionality, assisted by a sufficient degree of molecular backbone flexibility. In contrast, the same kind of step......-edge crossing is not observed when the molecules are adsorbed on the isotropic Ag(111) or more reactive Cu(110) surfaces. On Ag(111), similar 1-D assemblies are formed to those on Ag(110), but they are oriented along the step edges. On Cu(110), the carboxylic groups of NDCA are deprotonated and form covalent...... bonds to the surface, a situation which is also achieved on Ag(110) by annealing to 200 degrees C. These results show that the formation of particular self-assembled molecular nanostructures depends significantly on a subtle balance between the adsorbate-adsorbate and adsorbate-substrate interactions...

The origin of the residual conductivity of GaN films on ferroelectric materials

Science.gov (United States)

Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

2009-08-01

In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

Preparation and characterization of B-C-N hybrid thin films

International Nuclear Information System (INIS)

Uddin, Md. Nizam; Shimoyama, Iwao; Sekiguchi, Tetsuhiro; Baba, Yuji; Nath, Krishna G.; Nagano, Masamitsu

2006-06-01

Two dimensional thin films composed of boron, carbon and nitrogen (B-C-N hybrid) were synthesized by ion beam deposition, and their electronic and geometrical structures were characterized by core-level spectroscopy using synchrotron radiation. B-C-N hybrid thin films were grown from ion beam plasma of borazine on highly oriented pyrolitic graphite (HOPG) at various temperatures. The films were characterized in-situ by X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS). XPS study suggested that B, N and C atoms in the deposited films were in a wide variety of chemical bonds e.g., B-C, B-N, N-C, and B-C-N. It was found that B-C-N hybrid formation was enhanced at high temperature, and that the B-C-N component was dominantly synthesized at low boron content. In the NEXAFS spectra, the resonance peaks from B 1s to unoccupied π * -like orbitals were clearly observed. The polarization dependence of the B 1s → π * resonance peaks confirmed that the highly oriented graphite-like B-C-N hybrids surely exist at low boron content. (author)

Microporous carbonaceous adsorbents for CO2 separation via selective adsorption

KAUST Repository

Zhao, Yunfeng

2015-01-01

Selective adsorption of CO2 has important implications for many energy and environment-related processes, which require the separation of CO2 from other gases (e.g. N2 and CH4) with high uptakes and selectivity. The development of high-performance adsorbents is one of the most promising solutions to the success of these processes. The present review is focused on the state-of-the-art of carbon-based (carbonaceous) adsorbents, covering microporous inorganic carbons and microporous organic polymers, with emphasis on the correlation between their textural and compositional properties and their CO2 adsorption/separation performance. Special attention is given to the most recently developed materials that were not covered in previous reviews. We summarize various effective strategies (N-doping, surface functionalization, extra-framework ions, molecular design, and pore size engineering) for enhancing the CO2 adsorption capacity and selectivity of carbonaceous adsorbents. Our discussion focuses on CO2/N2 separation and CO2/CH4 separation, while including an introduction to the methods and criteria used for evaluating the performance of the adsorbents. Critical issues and challenges regarding the development of high-performance adsorbents as well as some overlooked facts and misconceptions are also discussed, with the aim of providing important insights into the design of novel carbonaceous porous materials for various selective adsorption based applications. This journal is © The Royal Society of Chemistry.

Synthesis and optical properties of BC{sub x}N{sub y} films deposited from N-triethylborazine and hydrogen mixture

Energy Technology Data Exchange (ETDEWEB)

Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Rumyantsev, Yurii M. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk (Russian Federation); Kosinova, Marina L. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation)

2015-04-30

BC{sub x}N{sub y} films were obtained by plasma enhanced chemical vapor deposition method using a single-source precursor N-triethylborazine and hydrogen as plasma activating gas. The effect of synthesis temperature on the chemical composition and properties of the BC{sub x}N{sub y} films was investigated. The BC{sub x}N{sub y} films were examined by scanning electron microscopy, Fourier transform infrared and Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and ellipsometry and spectrophotometry techniques. These experimental results indicated that the BC{sub x}N{sub y} films produced at low temperatures (T{sub dep} ≤ 673 K) are the polymer-like hydrogenated films with high transparency up to 93% in the visible part of the spectrum. BC{sub x}N{sub y} films produced at high temperatures (> 673 K) contain additional phase of disordered carbon which has dramatically reduce transparency. The band gap of the films varied from 0.6 to 4.5 eV, with variation in deposition temperature. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-triethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • Optical band gap of the BC{sub x}N{sub y} layers varied from 0.6 to 4.5 eV.

Oriented growth of Sr n+1Ti n O3n+1 Ruddlesden-Popper phases in chemical solution deposited thin films

International Nuclear Information System (INIS)

Gutmann, Emanuel; Levin, Alexandr A.; Reibold, Marianne; Mueller, Jan; Paufler, Peter; Meyer, Dirk C.

2006-01-01

Oriented thin films of perovskite-related Sr n +1 Ti n O 3 n +1 Ruddlesden-Popper phases (n=1, 2, 3) were grown on (001) single-crystalline SrTiO 3 substrates. Preparation of the films was carried out by wet chemical deposition from metalorganic Sr-Ti solutions (rich in Sr) and subsequent conversion into the crystalline state by thermal treatment in air atmosphere at a maximum temperature of 700 deg. C. Solutions were prepared by a modified Pechini method. The films were investigated by wide-angle X-ray scattering and high-resolution transmission electron microscopy. The phase content of powders prepared from the dried solutions and annealed under similar conditions differed from that present in the films, i.e. only polycrystalline SrTiO 3 was detected together with oxides of Ti and Sr. - Graphical abstract: Cross-sectional image of an oriented chemical solution deposited thin film obtained by high-resolution transmission electron microscopy. Periodical spacings corresponding to SrTiO 3 substrate (right) and Sr 2 TiO 4 Ruddlesden-Popper phase (n=1) film region (left) are marked

Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layers

International Nuclear Information System (INIS)

Krause, S; Meledin, D; Desmaris, V; Pavolotsky, A; Belitsky, V; Rudziński, M; Pippel, E

2014-01-01

The suitability of Al x Ga 1−x N epilayers to deposit onto ultra-thin NbN films has been demonstrated for the first time. High quality single-crystal films with 5 nm thickness confirmed by high resolution transmission electron microscopy (HRTEM) have been deposited in a reproducible manner by means of reactive DC magnetron sputtering at elevated temperatures and exhibit critical temperatures (T c ) as high as 13.2 K and residual resistivity ratio (RRR) ∼1 on hexagonal GaN epilayers. On increasing the Al content x in the Al x Ga 1−x N epilayer above 20%, a gradual deterioration of T c to 10 K was observed. Deposition of NbN on bare silicon substrates served as a reference and comparison. Excellent spatial homogeneity of the fabricated films was confirmed by R(T) measurements of patterned micro-bridges across the entire film area. The superconducting properties of these films were further characterized by critical magnetic field and critical current measurements. It is expected that the employment of GaN material as a buffer-layer for the deposition of ultra-thin NbN films will prospectively benefit terahertz electronics, particularly hot electron bolometer (HEB) mixers. (paper)

Structural and shear characteristics of adsorbed sodium caseinate and monoglyceride mixed monolayers at the air-water interface.

Science.gov (United States)

Rodríguez Patino, Juan M; Cejudo Fernández, Marta; Carrera Sánchez, Cecilio; Rodríguez Niño, Ma Rosario

2007-09-01

The structural and shear characteristics of mixed monolayers formed by an adsorbed Na-caseinate film and a spread monoglyceride (monopalmitin or monoolein) on the previously adsorbed protein film have been analyzed. Measurements of the surface pressure (pi)-area (A) isotherm and surface shear viscosity (eta(s)) were obtained at 20 degrees C and at pH 7 in a modified Wilhelmy-type film balance. The structural and shear characteristics of the mixed films depend on the surface pressure and on the composition of the mixed film. At surface pressures lower than the equilibrium surface pressure of Na-caseinate (at picaseinate and monoglyceride coexist at the interface, with a structural polymorphism or a liquid expanded structure due to the presence of monopalmitin or monoolein in the mixture, respectively. At higher surface pressures, collapsed Na-caseinate residues may be displaced from the interface by monoglyceride molecules. For a Na-caseinate-monopalmitin mixed film the eta(s) value varies greatly with the surface pressure (or surface density) of the mixed monolayer at the interface. In general, the greater the surface pressure, the greater are the values of eta(s). However, the values of eta(s) for a Na-caseinate-monoolein mixed monolayer are very low and practically do not depend on the surface pressure. The collapsed Na-caseinate residues displaced from the interface by monoglyceride molecules at pi>pi(e)(CS) have important repercussions on the shear characteristics of the mixed films.

Preconcentration in gas or liquid phases using adsorbent thin films

Directory of Open Access Journals (Sweden)

Antonio Pereira Nascimento Filho

2006-03-01

Full Text Available The possibility of preconcentration on microchannels for organic compounds in gas or liquid phases was evaluated. Microstructures with different geometries were mechanically machined using poly(methyl methacrylate - PMMA as substrates and some cavities were covered with cellulose. The surfaces of the microchannels were modified by plasma deposition of hydrophilic or hydrophobic films using 2-propanol and hexamethyldisilazane (HMDS, respectively. Double layers of HMDS + 2-propanol were also used. Adsorption characterization was made by Quartz Crystal Measurements (QCM technique using reactants in a large polarity range that showed the adsorption ability of the structures depends more on the films used than on the capillary phenomena. Cellulose modified by double layer film showed a high retention capacity for all gaseous compounds tested. However, structures without plasma deposition showed low retention capacity. Microchannels modified with double layers or 2-propanol plasma films showed higher retention than non-modified ones on gas or liquid phase.

Composite Ag/C:H:N films prepared by planar magnetron deposition

Energy Technology Data Exchange (ETDEWEB)

Hlidek, P. [Charles University, Faculty of Mathematics and Physics, Praha (Czech Republic)], E-mail: hlidek@karlov.mff.cuni.cz; Hanus, J.; Biederman, H.; Slavinska, D.; Pesicka, J. [Charles University, Faculty of Mathematics and Physics, Praha (Czech Republic)

2008-05-30

Composite Ag/C:H:N films were deposited by means of an unbalanced magnetron operated in a gas mixture of nitrogen and n-hexane. Composition of the films was controlled by electric power delivered to the magnetron and by ratio of nitrogen and n-hexane in the working gas mixture. The films were characterized using transmission electron microscopy, by the absorption spectra in visible and near infrared regions and by Fourier transform infrared spectroscopy. Immediately after film deposition and without breaking vacuum (in situ) corresponding vibration infrared spectra were scanned and their evolution during ageing of the films was monitored. Wettability as determined from water contact angle was improved with raising nitrogen contents, i.e. with increasing the electric power and the ratio of nitrogen/n-hexane in the working gas mixture. The increased wettability is likely caused by presence of NH{sub x} groups in Ag/C:H:N films. The incorporation of nitrogen effectively prevents the formation of carboxylate groups on the silver inclusions surfaces during the aging in the open air. In addition, the oxidation mechanism of the polymer matrix is modified.

Combined TiN- and TaN temperature compensated thin film resistors

International Nuclear Information System (INIS)

Malmros, Anna; Andersson, Kristoffer; Rorsman, Niklas

2012-01-01

The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30–200 °C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/°C. The TaN TFR on the other hand exhibited a negative TCR of − 470 ppm/°C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to − 60 and 100 ppm/°C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

Preparation and characterization of sputtered Fe1-xN x films

International Nuclear Information System (INIS)

Easton, E. Bradley; Buhrmester, Th.; Dahn, J.R.

2005-01-01

Iron nitride films have been prepared by reactive DC magnetron sputtering. The composition of Fe 1-x N x was varied over a range of 0 ≤ x ≤ 0.5 by controlling the nitrogen flow rate during sputtering. These films were characterized using powder X-ray diffraction (XRD), thermogravimetric and electron microprobe analysis. We found that the nitrogen content in the films increased with nitrogen gas partial pressure. XRD experiments revealed an evolution through the α-Fe, γ'-Fe 4 N, ε-Fe 2+z N, ζ-Fe 2 N, γ'''-FeN and γ'-FeN phases, when the nitrogen gas mole percentage was increased from 0% up to 70%. Above 70%, only the γ'-FeN phase was formed despite a measurable increase in the nitrogen content of the film with nitrogen gas partial pressure. Rietveld analysis of powder X-ray diffraction patterns revealed that this behavior is due to an increase in the nitrogen site occupation factor within the lattice

Experimental Determination of the Molar Absorption Coefficient of n-Hexane Adsorbed on High-Silica Zeolites.

Science.gov (United States)

Gatti, Giorgio; Olivas Olivera, Diana F; Sacchetto, Vittoria; Cossi, Maurizio; Braschi, Ilaria; Marchese, Leonardo; Bisio, Chiara

2017-09-06

Determination of the molar absorption coefficients of the CH 3 bending mode at ν˜ =1380 cm -1 (ϵ 1380 ) of n-hexane adsorbed from the gas phase on two different dealuminated zeolites is derived by a combination of IR spectroscopy and microgravimetric analysis. High-silica zeolite Y (HSZ-Y) and zeolite ZSM-5 (with SiO 2 /Al 2 O 3 ratios of 200 and 280, respectively) with different textural and surface features are selected to evaluate the effect of the pore structure and architecture on the value of ϵ 1380 of the adsorbed n-hexane. Experimental data indicate that the molecule experiences a different adsorption environment inside zeolites; thus resulting in a significant change of the dipole moment and very different ϵ 1380 values: (0.278±0.018) cm μmol -1 for HSZ-Y and (0.491±0.032) cm μmol -1 for ZSM-5. Experimental data are also supported by computational modeling, which confirms the effect of different matrices on the IR absorption intensity. This study reveals that the use of probe molecules for quantitative measurements of surface sites has to be judiciously adopted, especially if adsorption occurs in the restricted spaces of microporous materials. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Degradation of dimethylformamide on the surface of the nanosized WO{sub 3} films studied by infrared spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Gavrilyuk, A.I., E-mail: gavrilyuk@mail.ioffe.ru

2016-07-30

Highlights: • Dimethylformamide was adsorbed on the surface of the nanosized WO{sub 3} films. • The mechanism of the adsorption was investigated by IR spectroscopy. • The transformations of the adsorbed molecules either in dark or under the action of light was discussed. - Abstract: Here I report on the degradation of dimethylformamide on the surface of the nanosized WO{sub 3} films under the action of light. Dimethylformamide, a substance that has a series of interesting properties, was adsorbed on the surface of the WO{sub 3} films and its adsorption mechanism and transformations under the action of light have been investigated with the help of the IR spectroscopy. The spirit of the research is that both DMF modifications have been used i.e., conventional and that with the substitution of hydrogen atoms by deuterium. Formation of two weak bonds (donor-acceptor bond and hydrogen bond) provides a great catalytic effect for photo-initiated proton-coupled electron transfer from the adsorbed molecules to the WO{sub 3} film surface. The mechanism of the detachment of hydrogen atoms and subsequent transformation of the adsorbed molecules has been investigated and discussed.

Adsorption of apo- and holo-tear lipocalin to a bovine Meibomian lipid film.

Science.gov (United States)

Mudgil, Poonam; Millar, Thomas J

2008-04-01

Adsorption of apo- and holo-tear lipocalin (Tlc) to bovine Meibomian lipid film was studied. A Langmuir trough was used for these studies and the adsorption of protein was observed by recording changes in the pressure with time (pi-T profile). The films were photographed at different stages of adsorption by doping Meibomian lipids with a fluorescently tagged lipid. The results indicated that apo-Tlc adsorbed much more quickly than holo-Tlc to the Meibomian lipid film. Contrary to the expectation that holo-Tlc would release lipids to the surface and surface pressure would be higher, it was found that the surface pressure was higher with the adsorption of apo-Tlc to the surface. Photography of the films showed that apo- and holo-Tlc interacted differently with the Meibomian lipid layer. Adsorption of holo-Tlc resulted in big bright patches and adsorption of apo-Tlc resulted in many small patches along with the big patches. Both forms of Tlc produced a more stable film as indicated by decreased movement of the protein adsorbed films, and a higher maximum surface pressure upon compression of these films compared with Meibomian lipid films alone. Isocyles of apo-Tlc adsorbed films gave a higher surface pressure than that of holo-Tlc. From these results, it is concluded that both apo- and holo-Tlc adsorbed to the Meibomian lipid layer and the delivery of the lipids from Tlc to the outer lipid layer could not be detected by our techniques. Its scavenging role to remove lipids from the corneal surface and bind with them might be beneficial for increasing tear viscosity but whether those lipids are delivered to the outermost lipid layer still remains unclear.

Enhancement of c-axis texture of AlN films by substrate implantation

International Nuclear Information System (INIS)

Chen, C.H.; Yeh, J.M.; Hwang, J.

2005-01-01

Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm -2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of ∼10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1)

Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3

International Nuclear Information System (INIS)

Kim, Hyo Kyeom; Kim, Ju Youn; Park, Jin Yong; Kim, Yang Do; Kim, Young Do; Jeon, Hyeong Tag; Kim, Won Mok

2002-01-01

TiN films were deposited by using the metalorganic atomic layer deposition (MOALD) method using tetrakis-dimethyl-amino-titanium (TDMAT) as the titanium precursor and ammonia (NH 3 ) as the reactant gas. Two saturated TiN film growth regions were observed in the temperature ranges from 175 and 190 .deg. C and from 200 and 210 .deg. C. TiN films deposited by the MOALD technique showed relatively lower carbon content than films deposited by metalorganic chemical vapor deposition (MOCVD) method. TiN films deposited at around 200 .deg. C under standard conditions showed the resistivity values as low as 500 μΩ-cm, which is about one order lower than the values for TiN films deposited by MOCVD using TDMAT or TDMAT with NH 3 . Also, the carbon incorporation and the resistivity were further decreased with increasing Ar purge time and flow rate. TiN films deposited at temperature below 300 .deg. C showed amorphous characteristics. TiN film deposited on contact holes, about 0.4-μm wide and 0.8-μm deep, by using the MOALD method showed excellent conformal deposition with almost 100% step coverage. This study demonstrates that the processing parameters need to be carefully controlled to optimize the film properties that the processing parameters need to be carefully controlled to optimize the film properties when using the ALD technique and that TiN films deposited by using the MOALD method exhibited excellent film properties compared to those of films deposited by using other CVD methods

Experimental study on the basic characteristics of a novel silica-based CMPO adsorbent

International Nuclear Information System (INIS)

Wei, Yuezhou; Arai, Tsuyoshi; Zhang, Anyun; Hoshi, Harutaka; Koma, Yoshikazu; Watanabe, Masayuki

2002-01-01

In order to establish the extraction chromatography process for recovery of minor actinides from HLLW with a novel silica-based CMPO (octyl(phenyl)-N, N-diisobutylcarbamoylmethylphosphine oxide) adsorbent, some basic characteristics, such as dissolving behavior of CMPO from the adsorbent, thermal decomposition of the adsorbent and treatment method of organic wastes, were examined. It was found that the leakage of CMPO from the adsorbent in contact with an aqueous solution is the result of the solubility of CMPO in the solution. About 40-50 ppm of CMPO constantly leaked into the effluent from the adsorbent packed column using 0.01 M (M=mol/dm 3 ) HNO 3 as a mobile phase. The leakage of CMPO from the adsorbent could be effectively depressed with the utilization of the aqueous solution saturated by CMPO. TG-DTA thermal analysis results indicate that CMPO in the adsorbent decomposed at 20degC and the SDB-polymer at 290degC. The impregnated CMPO could be completely dissolved out from the support with acetone. Furthermore, the organic wastes such as CMPO, oxalic acid and DTPA those come from the elution procedure could be effectively decomposed with the Fenton reagent. (author)

Synthesis of Hydrophilic Sulfur-Containing Adsorbents for Noble Metals Having Thiocarbonyl Group Based on a Methacrylate Bearing Dithiocarbonate Moieties

Directory of Open Access Journals (Sweden)

Haruki Kinemuchi

2018-01-01

Full Text Available Novel hydrophilic sulfur-containing adsorbents for noble metals were prepared by the radical terpolymerization of a methacrylate bearing dithiocarbonate moieties (DTCMMA, hydrophilic monomers, and a cross-linker. The resulting adsorbents efficiently and selectively adsorbed noble metals (Au, Ag, and Pd from various multielement aqueous solutions at room temperature owing to the thiocarbonyl group having high affinity toward noble metals. The metal adsorption by the adsorbents was proceeded by simple mixing followed by filtration. The noble metal selectivity of the adsorbent obtained from DTCMMA and N-isopropylacrylamide was higher than that of the adsorbent obtained from DTCMMA and N,N-dimethylacrylamide due to the lower nonspecific adsorption.

Molecular sieve adsorbents and membranes for applications in the production of renewable fuels and chemicals

Science.gov (United States)

Ranjan, Rajiv

Metal organic frameworks (MOF), a new class of porous materials, have emerged as promising candidate for gas storage, separation membrane and chemical sensors. We used secondary growth method to grow microporous metal organic framework (MMOF) films on porous alumina supports. Examination of the film using SEM and XRD showed that the crystals were well inter-grown and preferentially oriented. Gas permeation study showed that membranes were defect free and moderate selectivity was achieved for H2/N2 gas pairs. The next project had to do with ethanol production from lignocellulosic biomass as an alternate energy source. However, toxic inhibitors produced from the hydrolysis of biomass decrease ethanol yield during the fermentation process. We demonstrated the use of zeolites for the pretreatment of hydrolyzate in order to remove inhibitors like 5-Hydroxymethylfurfuraldehyde (HMF) and furfural from aqueous solution. Zeolites exhibit preferential adsorption of the inhibitors and in effect improve the ethanol yield during fermentation. Ideal Adsorbed Solution Theory (IAST) was also used to predict adsorption isotherms for HMF-furfural mixtures using single component adsorption data. We also studied production of HMF, a potential substitute as a building block for plastic and chemical production, from renewable biomass resources. Catalytic dehydration of fructose for HMF production faces problems like low conversion and yield. Dimethyl sulfoxide (DMSO) can be used as the solvent as well as the catalyst resulting in high HMF yield. We studied a reaction-separation system for this dehydration reaction where the product (HMF) could be recovered by selective adsorption on solid adsorbents from the reaction mixture.

Properties of planar structures based on Policluster films of diamond and AlN

Science.gov (United States)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Hardness enhancement and oxidation resistance of nanocrystalline TiN/Mo xC multilayer films

International Nuclear Information System (INIS)

Liu, Q.; Wang, X.P.; Liang, F.J.; Wang, J.X.; Fang, Q.F.

2006-01-01

In this paper the influence of the layer's microstructure on the hardness enhancement in multilayer nanocrystalline films and the oxidation resistance are studied. The TiN/Mo x C multilayer films at different modulation period, and Mo x C and TiN monolayer films were deposited on the (0 0 1) silicon wafers and molybdenum sheets by rf and dc magnetron sputtering. The monolayer TiN films with a thickness of about 2 μm are of pure face-center cubic TiN phase, while the monolayer Mo x C films consist of two phases, one of which is body-center cubic Mo and the other is hexagonal Mo 2 C as determined by XRD. The coarse columnar grains of about 200 nm in the monolayer TiN films become much smaller or disappear in the multilayer films. The hardness enhancement of the multilayer films takes place at the modulation period of 320 nm, which can reach to 26 GPa and is much higher than the values of Mo x C and TiN monolayer films. This enhancement in hardness can be explained as the decrease in the size and/or disappearance of columnar grains in the TiN layer. The Young's modulus in the temperature range from 100 to 400 deg. C increases with decreasing modulation period. It is found that about 100 nm thick TiN films can increase largely the oxidation resistance of Mo x C films

Comparison of mechanical behavior of TiN, TiNC, CrN/TiNC, TiN/TiNC films on 9Cr18 steel by PVD

Science.gov (United States)

Feng, Xingguo; Zhang, Yanshuai; Hu, Hanjun; Zheng, Yugang; Zhang, Kaifeng; Zhou, Hui

2017-11-01

TiN, TiNC, CrN/TiNC and TiN/TiNC films were deposited on 9Cr18 steel using magnetron sputtering technique. The morphology, composition, chemical state and crystalline structure of the films were observed and analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Hardness and adhesion force were tested by nanoindentation and scratch tester, respectively. The friction and wear behavior of TiN, TiNC, CrN/TiNC and TiN/TiNC films sliding against GCr15 balls were investigated and compared synthetically using ball-on-disk tribometer. It was found that Tisbnd N, Tisbnd C, Tisbnd Nsbnd C and Csbnd C bonds were formed. The TiN/TiNC film was composed of TiN, TiC and TiNC phases. Hardness and adhesion force results indicated that although the TiN film possessed the highest hardness, its adhesion force was lowest among all the films. Tribological test results showed that the friction coefficient of TiN/TiNC was much lower than that of TiN and the wear rate decreases remarkably from 2.3 × 10-15 m3/Nm to 7.1 × 10-16 m3/Nm, which indicated the TiN/TiNC film has better wear resistance.

Infrared Analysis Of Enzymes Adsorbed Onto Model Surfaces

Science.gov (United States)

Story, Gloria M.; Rauch, Deborah S.; Brode, Philip F.; Marcott, Curtis A.

1989-12-01

The adsorption of the enzymes, subtilisin BPN' and lysozyme, onto model surfaces was examined using attenuated total reflectance (ATR) infrared (IR) spectroscopy. Using a cylindrical internal reflection (CIRcle) cell with a Germanium (Ge) internal reflection element (IRE), model hydrophilic surfaces were made by plasma cleaning the IRE and model hydrophobic surfaces were made by precoating the IRE with a thin film of polystyrene. Gas chromatography (GC)-IR data collection software was used to monitor adsorption kinetics during the first five minutes after injection of the enzyme into the CIRcle cell. It was found that for both lysozyme and BPN', most of the enzyme that was going to adsorb onto the model surface did so within ten seconds after injection. Nearly an order-of-magnitude more BPN' adsorbed on the hydrophobic Ge surface than the hydrophilic one, while lysozyme adsorbed somewhat more strongly to the hydrophilic Ge surface. Overnight, the lysozyme layer continued to increase in thickness, while BPN' maintained its initial coverage. The appearance of carboxylate bands in some of the adsorbed BPN' spectra suggests the occurrence of peptide bond hydrolysis. A Au/Pd coating on the CIRcle cell o-rings had a significant effect on the adsorption of BPN'. (This coating was applied in an attempt to eliminate interfering Teflon absorption bands.) An apparent electrochemical reaction occurred, involving BPN', Ge, Au/Pd, and the salt solution used to stabilize BPN'. The result of this reaction was enhanced adsorption of the enzyme around the coated o-rings, etching of the Ge IRE at the o-ring site, and some autolysis of the enzyme. No such reaction was observed with lysozyme.

Barrier capability of Zr-N films with titanium addition against copper diffusion

International Nuclear Information System (INIS)

Wang Ying; Cao Fei; Yang Xiaodong; Ding Minghui

2009-01-01

Zr-Ti-N film prepared by sputtering deposition has been employed as a potential diffusion barrier for Cu metallization. It is thought that the existing states of Ti and Zr in the films are Ti-N and Zr-N phase in Zr-Ti-N films. Material analysis by XRD, XPS and sheet resistance measurement reveal that the failure of Zr-N film is mainly due to the formation of Cu 3 Si precipitates at the Zr-N/Si interface by Cu diffusion through the grain boundaries or local defects of the Zr-N barrier layer into Si substrate. In conjunction with sheet resistance measurement, XRD and XPS analyses, the Cu/Zr-Ti-N/Si contact system has high thermal stability at least up to 700 deg. C. The incorporation of Ti atoms into Zr-N barrier layer was shown to be beneficial in improving the thermal stability of the Cu/barrier/Si contact system.

Instability of confined water films between elastic surfaces

NARCIS (Netherlands)

de Beer, Sissi; 't Mannetje, Dieter; Zantema, Sietske; Mugele, Friedrich

2010-01-01

We investigated the dynamics of nanometer thin water films at controlled ambient humidity adsorbed onto two atomically smooth mica sheets upon rapidly bringing the surfaces into contact. Using a surface forces apparatus (SFA) in imaging mode, we found that the water films break up into a

Organized organic ultrathin films fundamentals and applications

CERN Document Server

Ariga, Katsuhiko

2012-01-01

This handy reference is the first comprehensive book covering both fundamentals and recent developments in the field with an emphasis on nanotechnology. Written by a highly regarded author in the field, the book details state-of-the-art preparation, characterization and applications of thin films of organic molecules and biomaterials fabricated by wet processes and also highlights applications in nanotechnology The categories of films covered include monomolecular films (monolayers) both on a water surface and on a solid plate, Langmuir-Blodgett films (transferred multilayer films on a solid plate from a water surface), layer-by-layer films (adsorbed multilayer films on a solid support), and spontaneously assembled films in solution.

Combination of rice husk and coconut shell activated adsorbent to adsorb Pb(II) ionic metal and it’s analysis using solid-phase spectrophotometry (sps)

Science.gov (United States)

Rohmah, D. N.; Saputro, S.; Masykuri, M.; Mahardiani, L.

2018-03-01

The purpose of this research was to know the effect and determine the mass comparation which most effective combination between rice husk and coconut shell activated adsorbent to adsorb Pb (II) ion using SPS method. This research used experimental method. Technique to collecting this datas of this research is carried out by several stages, which are: (1) carbonization of rice husk and coconut shell adsorbent using muffle furnace at a temperature of 350°C for an hour; (2) activation of the rice husk and coconut shell adsorbent using NaOH 1N and ZnCl2 15% activator; (3) contacting the adsorbent of rice husk and coconut shell activated adsorbent with liquid waste simulation of Pb(II) using variation comparison of rice husk and coconut shell, 1:0; 0:1; 1:1; 2:1; 1:2; (4) analysis of Pb(II) using Solid-Phase Spectrophotometry (SPS); (5) characterization of combination rice husk and coconut shell activated adsorbent using FTIR. The result of this research show that the combined effect of combination rice husk and coconut shell activated adsorbent can increase the ability of the adsorbent to absorb Pb(II) ion then the optimum adsorbent mass ratio required for absorbing 20 mL of Pb(II) ion with a concentration of 49.99 µg/L is a ratio of 2:1 with the absorption level of 97,06%Solid-Phase Spectrophotometry (SPS) is an effective method in the level of µg/L, be marked with the Limit of Detection (LOD) of 0.03 µg/L.

Growth of InN films on spinel substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Mitamura, K. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Ohta, J.; Fujioka, H. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kanagawa 213-0012 (Japan); Oshima, M. [Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2007-10-15

We have grown InN films on MgAl{sub 2}O{sub 4}(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe{sub 2}O{sub 4}(111) substrates. It has been revealed that InN(0001) films grow on MgAl{sub 2}O{sub 4}(111) with an in-plane epitaxial relationship of InN[1 anti 100]//MgAl{sub 2}O{sub 4}[1 anti 10], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30 rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl{sub 2}O{sub 4} and those on (Mn,Zn)Fe{sub 2}O{sub 4} led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Deposit of thin films of TiN, a-C, Ti/TiN/a-C by laser ablation

International Nuclear Information System (INIS)

Mejia, I.S.; Escobar A, L.; Camps, E.; Romero, S.; Muhl, S.

2006-01-01

Thin films of titanium nitride (TiN), amorphous carbon (a-C), as well as bilayers of Ti/TiN/a-C were deposited by means of the laser ablation technique. It was investigated the effect that it has the laser fluence used to ablation the targets in the structure and mechanical properties of the TiN deposited films. The TiN obtained films have a preferential orientation in the direction (200). The results show that the hardness of this material is influenced by the laser fluence. It is observed that the hardness is increased in an approximately lineal way with the increment of the fluence up to 19 J/cm 2 . The films of amorphous carbon present hardness of the order of 11.2 GPa. Likewise it was found that the multilayers of Ti/TiN/aC presented a bigger hardness that of its individual components. (Author)

Structure and magnetization of Co4N thin film

Science.gov (United States)

Pandey, Nidhi; Gupta, Mukul; Gupta, Rachana; Rajput, Parasmani; Stahn, Jochen

2018-02-01

In this work, we studied the local structure and the magnetization of Co4N thin films deposited by a reactive dc magnetron sputtering process. The interstitial incorporation of N atoms in a fcc Co lattice is expected to expand the structure. This expansion yields interesting magnetic properties e.g. a larger magnetic moment (than Co) and a very high value of spin polarization ratio in Co4N . By optimizing the growth conditions, we prepared Co4N film having lattice parameter close to its theoretically predicted value. The N concentration was measured using secondary ion mass spectroscopy. Detailed magnetization measurements using bulk magnetization method and polarized neutron reflectivity confirm that the magnetic moment of Co in Co4N is higher than that of Co.

Synthesis of ReN3 Thin Films by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

G. Soto

2014-01-01

Full Text Available In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40 orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

Degradation of superconducting Nb/NbN films by atmospheric oxidation

Energy Technology Data Exchange (ETDEWEB)

Henry, Michael David; Wolfley, Steven L.; Young, Travis Ryan; Monson, Todd; Pearce, Charles Joseph; Lewis, Rupert M.; Clark, Blythe; Brunke, Lyle Brent; Missert, Nancy A.

2017-03-01

Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. As a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.

Hydrodynamic thickness of petroleum oil adsorbed layers in the pores of reservoir rocks.

Science.gov (United States)

Alkafeef, Saad F; Algharaib, Meshal K; Alajmi, Abdullah F

2006-06-01

The hydrodynamic thickness delta of adsorbed petroleum (crude) oil layers into the pores of sandstone rocks, through which the liquid flows, has been studied by Poiseuille's flow law and the evolution of (electrical) streaming current. The adsorption of petroleum oil is accompanied by a numerical reduction in the (negative) surface potential of the pore walls, eventually stabilizing at a small positive potential, attributed to the oil macromolecules themselves. After increasing to around 30% of the pore radius, the adsorbed layer thickness delta stopped growing either with time or with concentrations of asphaltene in the flowing liquid. The adsorption thickness is confirmed with the blockage value of the rock pores' area determined by the combination of streaming current and streaming potential measurements. This behavior is attributed to the effect on the disjoining pressure across the adsorbed layer, as described by Derjaguin and Churaev, of which the polymolecular adsorption films lose their stability long before their thickness has approached the radius of the rock pore.

Infrared spectroscopic and voltammetric study of adsorbed CO on stepped surfaces of copper monocrystalline electrodes

International Nuclear Information System (INIS)

Koga, O.; Teruya, S.; Matsuda, K.; Minami, M.; Hoshi, N.; Hori, Y.

2005-01-01

Voltammetric and infrared (IR) spectroscopic measurements were carried out to study adsorbed CO on two series of copper single crystal electrodes n(111)-(111) and n(111)-(100) in 0.1M KH 2 PO 4 +0.1M K 2 HPO 4 at 0 o C. Reversible voltammetric waves were observed below -0.55V versus SHE for adsorption of CO which displaces preadsorbed phosphate anions. The electric charge of the redox waves is proportional to the step atom density for both single crystal series. This fact indicates that phosphate anions are specifically adsorbed on the step sites below -0.55V versus SHE. Voltammetric measurements indicated that (111) terrace of Cu is covered with adsorbed CO below -0.5V versus SHE. Nevertheless, no IR absorption band of adsorbed CO is detected from (111) terrace. Presence of adsorbed CO on (111) terrace is presumed which is not visible by the potential difference spectroscopy used in the present work. IR spectroscopic measurements showed that CO is reversibly adsorbed with an on-top manner on copper single crystal electrodes of n(111)-(111) and n(111)-(100) with approximately same wavenumber of C?O stretching vibration of 2070cm -1 . The IR band intensity is proportional to the step atom density. Thus CO is adsorbed on (111) or (100) steps on the single crystal surfaces. An analysis of the IR band intensity suggested that one CO molecule is adsorbed on every two or more Cu step atom of the monocrystalline surface. The spectroscopic data were compared with those reported for uhv system. The C-O stretching wavenumber of adsorbed CO in the electrode-electrolyte system is 30-40cm -1 lower than those in uhv system

Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

International Nuclear Information System (INIS)

Wang Qimin; Kim, Kwang Ho

2008-01-01

Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

Nanocellulose-Zeolite Composite Films for Odor Elimination.

Science.gov (United States)

Keshavarzi, Neda; Mashayekhy Rad, Farshid; Mace, Amber; Ansari, Farhan; Akhtar, Farid; Nilsson, Ulrika; Berglund, Lars; Bergström, Lennart

2015-07-08

Free standing and strong odor-removing composite films of cellulose nanofibrils (CNF) with a high content of nanoporous zeolite adsorbents have been colloidally processed. Thermogravimetric desorption analysis (TGA) and infrared spectroscopy combined with computational simulations showed that commercially available silicalite-1 and ZSM-5 have a high affinity and uptake of volatile odors like ethanethiol and propanethiol, also in the presence of water. The simulations showed that propanethiol has a higher affinity, up to 16%, to the two zeolites compared with ethanethiol. Highly flexible and strong free-standing zeolite-CNF films with an adsorbent loading of 89 w/w% have been produced by Ca-induced gelation and vacuum filtration. The CNF-network controls the strength of the composite films and 100 μm thick zeolite-CNF films with a CNF content of less than 10 vol % displayed a tensile strength approaching 10 MPa. Headspace solid phase microextraction (SPME) coupled to gas chromatography-mass spectroscopy (GC/MS) analysis showed that the CNF-zeolite films can eliminate the volatile thiol-based odors to concentrations below the detection ability of the human olfactory system. Odor removing zeolite-cellulose nanofibril films could enable improved transport and storage of fruits and vegetables rich in odors, for example, onion and the tasty but foul-smelling South-East Asian Durian fruit.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

International Nuclear Information System (INIS)

Lin, Jianliang; Chistyakov, Roman

2017-01-01

Highlights: • Highly orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm"−"2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm"−"2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm"−"2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lin, Jianliang, E-mail: Jianliang.lin@swri.org [Southwest Research Institute, San Antonio, TX 78238 (United States); Chistyakov, Roman [Zpulser LLC, Mansfield, MA 02048 (United States)

2017-02-28

Highlights: • Highly <0001> orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the <0001> texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm{sup −2}) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm{sup −2} improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm{sup −2} showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

Surface modification of parylene-N films for the culture of osteoblast-like cells (MG-63)

Energy Technology Data Exchange (ETDEWEB)

Liaqat, Usman [Graduate Program of Nano Science and Technology, Yonsei University, 50-Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Ko, Hyuk [Department of Materials Science and Engineering, Yonsei University, 50-Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Suh, Hwal [Graduate Program of Nano Science and Technology, Yonsei University, 50-Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Department of Medical Engineering, College of Medicine, Yonsei University, 50-Yonsei Ro, Seodaemun-gu, Seoul, 120-749 (Korea, Republic of); Lee, Misu [Division of Life Sciences, College of Life Science and Bioengineering, Incheon National University, Incheon 406-772 (Korea, Republic of); Pyun, Jae-Chul, E-mail: jcpyun@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50-Yonsei Ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

2016-08-15

Highlights: • Osteoblast-like cells (MG-63) was cultured on differently modified surfaces of parylene films. • Proliferation of MG-63 was observed to be far increased on UV-treated parylene-N film. • The influences of UV-treatment were found out on cell viability, proliferation rate and cell cycle. • The influence was estimated to be negligible on the protein synthesis, cell differentiation. • The UV-treated parylene-N was demonstrated to be effectively used for the culture of MG-63. - Abstract: The influence of microenvironments on the culture of osteoblast-like cells (MG-63) has been investigated using parylene films with different surfaces, such as parylene-N film, UV-modified parylene-N film, functional parylene film with amine groups (parylene-A), and UV-modified parylene-A film. In this work, parylene-N film was found to induce dramatic changes in cell adhesion and cell viability before and after UV-treatment with respect to the culture of osteoblast-like cells (MG-63). The influences of such a chemical environment on cell culture were investigated in relation to the cell proliferation (viability and proliferation rate) and the cell physiology (cell cycle, protein synthesis, and differentiation) of cells grown on parylene-N film, UV-modified parylene-N film, parylene-A film, and UV-modified parylene-A film in comparison with cells grown on a polystyrene surface.

Adsorbed Polymer Nanolayers on Solids: Mechanism, Structure and Applications

Science.gov (United States)

Sen, Mani Kuntal

In this thesis, by combining various advanced x-ray scattering, spectroscopic and other surface sensitive characterization techniques, I report the equilibrium polymer chain conformations, structures, dynamics and properties of polymeric materials at the solid-polymer melt interfaces. Following the introduction, in chapter 2, I highlight that the backbone chains (constituted of CH and CH2 groups) of the flattened polystyrene (PS) chains preferentially orient normal to the weakly interactive substrate surface via thermal annealing regardless of the initial chain conformations, while the orientation of the phenyl rings becomes randomized, thereby increasing the number of surface-segmental contacts (i.e., enthalpic gain) which is the driving force for the flattening process of the polymer chains even onto a weakly interactive solid. In chapter 3, I elucidate the flattened structures in block copolymer (BCP) thin films where both blocks lie flat on the substrate, forming a 2D randomly phase-separated structure irrespective of their microdomain structures and interfacial energetics. In chapter 4, I reveal the presence of an irreversibly adsorbed BCP layer which showed suppressed dynamics even at temperatures far above the individual glass transition temperatures of the blocks. Furthermore, this adsorbed BCP layer plays a crucial role in controlling the microdomain orientation in the entire film. In chapter 5, I report a radically new paradigm of designing a polymeric coating layer of a few nanometers thick ("polymer nanolayer") with anti-biofouling properties.

Synthesis of c-axis oriented AlN thin films on different substrates: A review

International Nuclear Information System (INIS)

Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

2010-01-01

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

Science.gov (United States)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

International Nuclear Information System (INIS)

Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

2016-01-01

N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

Suvekino näitab Herzogi filme / Andres Laasik

Index Scriptorium Estoniae

Laasik, Andres, 1960-2016

2002-01-01

Detsembris toimuvat Pimedate Ööde Filmifestivali laiendatakse ka suvele, et sobivates paikades näidata väärtfilme. Alates 6. juunist näidatakse Katariina kirikus kuuel õhtul algusega kell 22 Werner Herzogi (1942) filme. Režissöörist ja näidatavatest filmidest

Isotherms of Capillary Condensation Influenced by Formation of Adsorption Films.

Science.gov (United States)

Churaev; Starke; Adolphs

2000-01-15

Isotherms of capillary condensation are often used to determine the vapor sorption capacity of porous adsorbents as well as the pore size distribution by radii. In this paper, for calculating the volume of capillary condensate and of adsorption films in a porous body, an approach based on the theory of surface forces is used. Adsorption isotherms and disjoining pressure isotherms of wetting films are presented here in an exponential form discussed earlier. The calculations were made for straight cylindrical capillaries of different radii and slit pores of different width. The mechanisms of capillary condensation differ in cylindrical and slit pores. In cylindrical pores capillary condensation occurs due to capillary instability of curved wetting films on a capillary surface, when film thickness grows. In the case of slit pores, coalescence of wetting films formed on opposite slit surfaces proceeds under the action of attractive dispersion forces. Partial volumes of liquid in the state of both capillary condensate and adsorbed films are calculated dependent on the relative vapor pressure in a surrounding media. Copyright 2000 Academic Press.

Preparation and characterization of nanocrystalline composites Mo-C-N hard films

Energy Technology Data Exchange (ETDEWEB)

Liu, Q. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Liu, T. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Fang, Q.F. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China)]. E-mail: qffang@issp.ac.cn; Liang, F.J. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Wang, J.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China)

2006-05-01

Molybdenum carbonitride (MoCN) films were deposited on Si (001) and stainless steel substrates by reactive direct-current magnetron sputtering with a molybdenum and graphite composite target. By changing the substrate temperature and the N{sub 2} / Ar ratio in the sputtering gas, it is found that good quality MoCN films can be deposited at substrate temperature of 300-400 deg. C under N{sub 2} partial pressure of 0.25-0.5 Pa with a total working pressure of 1 Pa. The structures of the films deposited at such conditions were determined by X-ray diffraction and X-ray photoelectron spectroscopy analysis as nanocrystalline molybdenum carbonitride with a grain size of several ten nanometers was embedded in the amorphous matrix of C and CN {sub x}. The hardness of the MoCN films can reach 28 GPa, much higher than the value of MoC and MoN films alone.

Surface modification of porous nanocrystalline TiO2 films for dye-sensitized solar cell application by various gas plasmas

International Nuclear Information System (INIS)

Kim, Youngsoo; Yoon, Chang-Ho; Kim, Kang-Jin; Lee, Yeonhee

2007-01-01

Titanium dioxide (TiO 2 ) film for dye-sensitized solar cells (DSSCs) has surface defects such as oxygen vacancies created during the annealing process. The authors used a plasma treatment technique to reduce defects on TiO 2 surfaces. They investigated the influence of different gas plasma treatments of TiO 2 film on the photoelectric performance of DSSC. Short-circuit photocurrent density (J sc ), open-circuit photovoltage (V oc ), and the amount of adsorbed dye for DSSCs were measured. As a result, the solar-to-electricity conversion efficiencies of the O 2 - and N 2 -treated cells increased by 15%-20% compared to untreated cells. On the other hand, solar energy conversion efficiency of CF 4 -plasma treated cells decreased drastically. The increased amount of adsorbed dye on the TiO 2 film was measured by time-of-flight secondary ion mass spectrometry. TiO 2 surfaces modified by plasma treatment were characterized using analytical instruments such as x-ray photoelectron spectroscopy and near-edge x-ray absorption fine structure

Organic Photovoltaic Devices Based on Oriented n-Type Molecular Films Deposited on Oriented Polythiophene Films.

Science.gov (United States)

Mizokuro, Toshiko; Tanigaki, Nobutaka; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

2018-04-01

The molecular orientation of π-conjugated molecules has been reported to significantly affect the performance of organic photovoltaic devices (OPVs) based on molecular films. Hence, the control of molecular orientation is a key issue toward the improvement of OPV performance. In this research, oriented thin films of an n-type molecule, 3,4,9,10-Perylenetetracarboxylic Bisbenzimida-zole (PTCBI), were formed by deposition on in-plane oriented polythiophene (PT) films. Orientation of the PTCBI films was evaluated by polarized UV-vis spectroscopy and 2D-Grazing incidence X-ray diffraction. Results indicated that PTCBI molecules on PT film exhibit nearly edge-on and in-plane orientation (with molecular long axis along the substrate), whereas PTCBI molecules without PT film exhibit neither. OPVs composed of PTCBI molecular film with and without PT were fabricated and evaluated for correlation of orientation with performance. The OPVs composed of PTCBI film with PT showed higher power conversion efficiency (PCE) than that of film without PT. The experiment indicated that in-plane orientation of PTCBI molecules absorbs incident light more efficiently, leading to increase in PCE.

Synthesis and optical properties of BCxNy films deposited from N-triethylborazine and hydrogen mixture

International Nuclear Information System (INIS)

Sulyaeva, Veronica S.; Rumyantsev, Yurii M.; Kesler, Valerii G.; Kosinova, Marina L.

2015-01-01

BC x N y films were obtained by plasma enhanced chemical vapor deposition method using a single-source precursor N-triethylborazine and hydrogen as plasma activating gas. The effect of synthesis temperature on the chemical composition and properties of the BC x N y films was investigated. The BC x N y films were examined by scanning electron microscopy, Fourier transform infrared and Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and ellipsometry and spectrophotometry techniques. These experimental results indicated that the BC x N y films produced at low temperatures (T dep ≤ 673 K) are the polymer-like hydrogenated films with high transparency up to 93% in the visible part of the spectrum. BC x N y films produced at high temperatures (> 673 K) contain additional phase of disordered carbon which has dramatically reduce transparency. The band gap of the films varied from 0.6 to 4.5 eV, with variation in deposition temperature. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-triethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • Optical band gap of the BC x N y layers varied from 0.6 to 4.5 eV

Numerical simulation of amplification of space charge waves in n-InP films

International Nuclear Information System (INIS)

Garcia-Barrientos, Abel; Palankovski, Vassil

2011-01-01

The non-linear interaction of space charge waves including the amplification in microwave and millimeter wave range in n-InP films, possessing the negative differential conductance phenomenon, is investigated theoretically. Both the amplified signal and the generation of harmonics of the input signal are demonstrated, which are due to non-linear effect of the negative differential resistance. It is possible to observe an amplification of the space charge waves in n-InP films of submicron thicknesses at essentially higher frequencies f <70 GHz, when compared with n-GaAs films f < 44 GHz. The increment observed in the gain is due to the larger dynamic range in n-InP than in n-GaAs films.

Cellulose Acetate/N-TiO2 Biocomposite Flexible Films with Enhanced Solar Photochromic Properties

Science.gov (United States)

Radhika, T.; Anju, K. R.; Silpa, M. S.; Ramalingam, R. Jothi; Al-Lohedan, Hamad A.

2017-07-01

Flexible cellulose acetate/N-TiO2 nanocomposite films containing various concentrations of nanosized N-TiO2 and an intelligent methylene blue ink have been prepared by solution casting. The hydrothermally prepared nitrogen-doped titania (N-TiO2) and the films were characterized in detail. The photochromic properties of the prepared films were investigated under ultraviolet (UV), visible light, and simulated solar irradiation by UV-Vis spectrophotometry. Upon irradiation, the films exhibited rapid photochromic response that was reversible at room temperature. Films with higher content of nano N-TiO2 showed enhanced decoloration/recoloration under all irradiation conditions, with fast decoloration/recoloration under simulated solar irradiation. These results suggest that the amount of nano N-TiO2 in the composite, the concentration of methylene blue, and the solvent greatly influence the photochromic properties of the films. Such flexible and transparent cellulose acetate/N-TiO2 films with enhanced decoloration/recoloration properties under solar irradiation are promising smart materials for use in photoreversible printed electronics applications.

Preparation of Ta(C)N films by pulsed high energy density plasma

Energy Technology Data Exchange (ETDEWEB)

Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Zhang Yan [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Gu Weichao [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Zhang Guling [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China)

2007-04-07

The pulsed high energy density plasma (PHEDP) is generated in the working gas due to a high-voltage high-current discharge, within a coaxial gun. In PHEDP surface modification, discharge is applied for preparing the amorphous and nanostructured high-melting materials as thin films deposited on various substrates. In this investigation, Ta(C)N films were deposited using PHEDP on stainless steel. Pure tantalum and graphite were used as the inner and outer electrodes of the PHEDP coaxial gun, respectively. Nitrogen was used as the working gas and also one of the reactants. Preliminary study on the films prepared under different conditions shows that the formation of Ta(C)N is drastically voltage dependent. At lower gun voltage, no Ta(C)N was detected in the films; when the gun voltage reaches or exceeds 3.0 kV, Ta(C)N occurred. The films are composed of densely stacked nanocrystallines with diameter less than 30 nm, and some grains are within 10 nm in diameter.

Shrimp pond wastewater treatment using pyrolyzed chicken feather as adsorbent

Science.gov (United States)

Moon, Wei Chek; Jbara, Mohamad Hasan; Palaniandy, Puganeshwary; Yusoff, Mohd Suffian

2017-10-01

In this study, chicken feather fiber was used as a raw material to prepare a non-expensive adsorbent by pyrolysis without chemical activation. The main pollutants treated in this study were chemical oxygen demand (COD) and ammoniacal nitrogen (NH3-N) from shrimp pond wastewater containing high concentrations of nutrients, which caused the eutrophication phenomenon in adjacent water. Batch adsorption studies were performed to investigate the effect of pH (5-8), mass of adsorbent (0.5-3 g), and shaking time (0.5-2 h) on the removal efficiency of COD and NH3- N. Experimental results showed that the optimum conditions were as follows: pH 5, 0.5 g of adsorbent, and 0.5 h of shaking. Under these conditions, 34.01% and 40.47% of COD and NH3-N were removed, respectively, from shrimp pond wastewater. The adsorption processes were best described by the Langmuir isotherm model for COD and NH3-N removal, with maximum monolayer adsorption capacity of 36.9 and 7.24 mg/g for COD and NH3-N, respectively. The results proved that chicken feather could remove COD and NH3-N from shrimp pond wastewater. However, further studies on thermal treatment should be carried out to increase the removal efficiency of pyrolyzed chicken feather fiber.

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

Science.gov (United States)

le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

2018-05-01

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer

International Nuclear Information System (INIS)

Martins, Alessandro F.; Follmann, Heveline D.M.; Rubira, Adley F.; Muniz, Edvani C.

2011-01-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through 1 H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

Neutron irradiation of sputtered NbN films

International Nuclear Information System (INIS)

Weber, H.W.; Gregshammer, P.; Gray, K.E.; Kampwirth, R.T.

1989-01-01

In addition to the excellent high-field superconducting properties of NbN, it is the strain and radiation tolerance, measured in bulk NbN, which makes the material so attractive for large high-field magnets, especially for fusion applications. The authors report neutron irradiation experiments on sputtered NbN films, up to a fluence of 10/sup 23/ m/sup -2/ (E > 0.1 MeV), which prove that NbN films are also extremely radiation-hard high-field superconductors. Both the transition temperatures, T/sub c/, and the normal state resistivities show only small changes with neutron fluence. Concerning the critical current densities, j/sub c/, degradations by as much as 30% are observed at low fields, whereas in an intermediate field range (11-15 T) virtually no change of j/sub c/ and at high fields near 20 T even an increase of j/sub c/ are found. The latter observation is ascribed to a radiation-induced increase of the upper critical field, B/sub c2/, and to the occurence of peak effects near B/sub c2/

Artificially controlled stress anisotropy and magnetic properties of FeTaN thin films

International Nuclear Information System (INIS)

Deng, H.; Jarratt, J.D.; Minor, M.K.; Barnard, J.A.

1997-01-01

This article presents a new method of investigating internal stress effects on thin film magnetic properties, in this case magnetically soft FeTaN sputtered films. The FeTaN films were deposited on a series of oxidized silicon (111) substrates prestressed to different degrees. During sputtering all the deposition conditions were kept exactly the same for all the samples. However, anisotropic stresses with different amplitudes are systematically introduced into the films when the prestressed wafers were released. In this way, FeTaN films with compressive stress varying from 80 to 608 MPa are produced. We found that the saturation magnetostriction (λ s ), anisotropy field (H k ), initial permeability (μ i ) as well as easy axis orientation of FeTaN thin films are strongly affected by the induced stress anisotropy. A stress ratio concept is proposed as a measure of the degree of the stress anisotropy. Models for easy-hard axis switching induced by stress for magnetic films with positive magnetostriction are discussed. copyright 1997 American Institute of Physics

Preparation and Properties of Ti-TiN-Zr-ZrN Multilayer Films on Titanium Alloy Surface

Directory of Open Access Journals (Sweden)

LIN Song-sheng

2017-06-01

Full Text Available 24 cycles Ti-TiN-Zr-ZrN soft-hard alternating multilayer film was deposited on TC11 titanium alloy by vacuum cathodic arc deposition method. The structure and performance of the multilayer film, especially wear and sand erosion resistance were investigated by various analytical methods including pin on disc wear tester, sand erosion tester, 3D surface topography instrument, scanning electron microscopy (SEM, X-ray diffraction(XRD, micro-hardness tester and scratch adhesion tester. The results indicate that the Vickers-hardness of the multilayer film with thickness of 5.8μm can reach up to 28.10GPa. The adhesive strength of these coatings can be as high as 56N. Wear rate of the multilayer coated alloy is one order of magnitude smaller than bare one, which decreased from 7.06×10-13 m3·N-1·m-1 to 3.03×10-14m3·N-1·m-1. Multilayer films can play the role in hindering the extension of cracks, and thus sand erosion properties of the TC11 titanium alloy substrates are improved.

Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

Energy Technology Data Exchange (ETDEWEB)

Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

2007-07-21

(Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

Upper critical field of NbN film

International Nuclear Information System (INIS)

Ashkin, M.; Gavaler, J.R.

1978-01-01

It is proposed and experimentally verified that the anomalously high superconducting critical field normal to the surface of NbN films possessing a column-void microstructure is H/sub c3/, the field appropriate for surface superconductivity. It is also proposed that because the coherence length is much less than the lateral column dimension that the resistivity of the column and not the film enters calculations of the Maki parameter α. A previously noted discrepancy in α is removed by these proposals

Transparent, Ultrahigh-Gas-Barrier Films with a Brick-Mortar-Sand Structure.

Science.gov (United States)

Dou, Yibo; Pan, Ting; Xu, Simin; Yan, Hong; Han, Jingbin; Wei, Min; Evans, David G; Duan, Xue

2015-08-10

Transparent and flexible gas-barrier materials have shown broad applications in electronics, food, and pharmaceutical preservation. Herein, we report ultrahigh-gas-barrier films with a brick-mortar-sand structure fabricated by layer-by-layer (LBL) assembly of XAl-layered double hydroxide (LDH, X=Mg, Ni, Zn, Co) nanoplatelets and polyacrylic acid (PAA) followed by CO2 infilling, denoted as (XAl-LDH/PAA)n-CO2. The near-perfectly parallel orientation of the LDH "brick" creates a long diffusion length to hinder the transmission of gas molecules in the PAA "mortar". Most significantly, both the experimental studies and theoretical simulations reveal that the chemically adsorbed CO2 acts like "sand" to fill the free volume at the organic-inorganic interface, which further depresses the diffusion of permeating gas. The strategy presented here provides a new insight into the perception of barrier mechanism, and the (XAl-LDH/PAA)n-CO2 film is among the best gas barrier films ever reported. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Complete braided adsorbent for marine testing to demonstrate 3g-U/kg-adsorbent

Energy Technology Data Exchange (ETDEWEB)

Janke, Chris [ORNL; Yatsandra, Oyola [ORNL; Mayes, Richard [ORNL; none,; Gill, Gary [PNNL; Li-Jung, Kuo [PNNL; Wood, Jordana [PNNL; Sadananda, Das [ORNL

2014-04-30

ORNL has manufactured four braided adsorbents that successfully demonstrated uranium adsorption capacities ranging from 3.0-3.6 g-U/kg-adsorbent in marine testing at PNNL. Four new braided and leno woven fabric adsorbents have also been prepared by ORNL and are currently undergoing marine testing at PNNL.

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

Science.gov (United States)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Adsorbents for radioactive organic solvent wastes

International Nuclear Information System (INIS)

Ichinose, Shigeo; Kiribayashi, Takehiko.

1986-01-01

Purpose: To enable to settle radioactive solvents such as tributyl phosphate (TBP) and n-dodecane as they are without using hydrophobicizing agent such as quaternary ammonium salts. Constitution: The adsorbents are prepared by replacing interlaminer ions of swelling-type synthetic mica with alkaline earth metals or metal ions. For instance, synthetic micas introduced with Zr 4+ or Ca 2+ between the layers provide quite different functions from those of starting materials due to the properties of ions introduced between the layers. That is, they provide an intense affinity to organic phosphates such as TBP and transform into material showing a property of adsorbing and absorbing them. Particularly, the fixing nature to the phosphor content constituting TBP is significantly increased. (Horiuchi, T.)

Studies of the surface structures of molecular crystals and of adsorbed molecular monolayers on the (111) crystal faces of platinum and silver by low-energy electron diffraction

International Nuclear Information System (INIS)

Firment, L.E.

1977-01-01

The structures of molecular crystal surfaces were investigated for the first time by the use of low-energy electron diffraction (LEED). The experimental results from a variety of molecular crystals were examined and compared as a first step towards understanding the properties of these surfaces on a microscopic level. The method of sample preparation employed, vapor deposition onto metal single-crystal substrates at low temperatures in ultrahigh vacuum, allowed concurrent study of the structures of adsorbed monolayers on metal surfaces and of the growth processes of molecular films on metal substrates. The systems investigated were ice, ammonia, naphthalene, benzene, the n-paraffins (C 3 to C 8 ), cyclohexane, trioxane, acetic acid, propionic acid, methanol, and methylamine adsorbed and condensed on both Pt(111) and Ag(111) surfaces. Electron-beam-induced damage of the molecular surfaces was observed after electron exposures of 10 -4 A sec cm -2 at 20 eV. Aromatic molecular crystal samples were more resistant to damage than samples of saturated molecules. The quality and orientation of the grown molecular crystal films were influenced by substrate preparation and growth conditions. Forty ordered monolayer structures were observed. 110 figures, 22 tables, 162 references

Neutron scattering study of ³⁶ Ar monolayer films adsorbed on graphite

DEFF Research Database (Denmark)

Taub, H.; da Costa Carneiro, Kim; Kjems, Jørgen

1977-01-01

Diffraction of neutrons from 36 Ar monolayers adsorbed on graphite basal planes indicates that an ordered, two-dimensional (2D) triangular lattice is formed at low temperature. The lattice constant is found to be slightly larger than that of the bulk 3D solid but significantly smaller than that o...

Formation Process of Eosin Y-Adsorbing ZnO Particles by Electroless Deposition and Their Photoelectric Conversion Properties.

Science.gov (United States)

Nagaya, Satoshi; Nishikiori, Hiromasa; Mizusaki, Hideaki; Wagata, Hajime; Teshima, Katsuya

2015-06-03

The thin films consisting of crystalline ZnO particles were prepared on fluorine-doped tin oxide electrodes by electroless deposition. The particles were deposited from an aqueous solution containing zinc nitrate, dimethyamine-borane, and eosin Y at 328 K. As the Pd particles were adsorbed on the substrate, not only the eosin Y monomer but also the dimer and debrominated species were rapidly adsorbed on the spherical ZnO particles, which were aggregated and formed secondary particles. On the other hand, in the absence of the Pd particles, the monomer was adsorbed on the flake-shaped ZnO particles, which vertically grew on the substrate surface and had a high crystallinity. The photoelectric conversion efficiency was higher for the ZnO electrodes containing a higher amount of the monomer during light irradiation.

Orientational epitaxy in adsorbed monolayers

International Nuclear Information System (INIS)

Novaco, A.D.; McTague, J.P.

1977-01-01

The ground state for adsorbed monolayers on crystalline substrates is shown to involve a definite relative orientation of the substrate and adsorbate crystal axes, even when the relative lattice parameters are incommensurate. The rotation angle which defines the structure of the monolayer-substrate system is determined by the competition between adsorbate-substrate and adsorbate-adsorbate energy terms, and is generally not a symmetry angle. Numerical predictions are presented for the rare gas-graphite systems, whose interaction potentials are rather well known. Recent LEED data for some of these systems appear to corroborate these predictions

Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

Energy Technology Data Exchange (ETDEWEB)

Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

2012-06-01

Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

DEFF Research Database (Denmark)

Febvrier, Arnaud le; Van Nong, Ngo; Abadias, Gregory

2018-01-01

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over......-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale....

Combined ellipsometry and X-ray related techniques for studies of ultrathin organic nanocomposite films

Energy Technology Data Exchange (ETDEWEB)

Kraemer, Markus, E-mail: axo@standing-waves.d [Leibniz-Institut fuer Analytische Wissenschaften-ISAS-e.V., Bunsen-Kirchhoff-Str. 11, 44139 Dortmund (Germany); AXO DRESDEN GmbH, Siegfried-Raedel-Str. 31, 01809 Heidenau (Germany); Roodenko, Katy [Leibniz-Institut fuer Analytische Wissenschaften-ISAS-e.V.-Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin (Germany); Laboratory for Surface and Nanostructure Modification, University of Texas at Dallas-NSERL, 800W. Campbell Rd., Richardson, TX 75080 (United States); Pollakowski, Beatrix [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Hinrichs, Karsten [Leibniz-Institut fuer Analytische Wissenschaften-ISAS-e.V.-Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin (Germany); Rappich, Joerg [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Abteilung Silizium-Photovoltaik, Kekulestr. 5, 12489 Berlin (Germany); Esser, Norbert [Leibniz-Institut fuer Analytische Wissenschaften-ISAS-e.V.-Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin (Germany); Bohlen, Alex von; Hergenroeder, Roland [Leibniz-Institut fuer Analytische Wissenschaften-ISAS-e.V., Bunsen-Kirchhoff-Str. 11, 44139 Dortmund (Germany)

2010-07-30

Ultrathin nanocomposite films of nitrobenzene on silicon were analyzed by Infrared Spectroscopic Ellipsometry (IRSE), X-ray reflectivity (XRR) and X-ray standing waves (XSW) before and after evaporation of gold. Infrared Spectroscopic Ellipsometry measurements were performed for identification of adsorbates and for investigation of the molecular orientation. Results for film thickness were correlated with XRR measurements. Further, XSW measurements of elements incorporated in nitrobenzene (C, N, and O) were performed with soft X-rays. The combination of the different methods allowed to confirm a model for the electrochemically deposited nitrobenzene films before and after gold evaporation. The characterization by XRR and XSW scans using hard X-rays showed that gold had penetrated into the nitrobenzene film and thus changed density and optical properties of this layer significantly. A depth profile correlated to the electron density is deduced from the XRR measurements. This profile allows to localize-in vertical direction-gold islands within the composite film.

Epitaxial Fe16N2 thin film on nonmagnetic seed layer

Science.gov (United States)

Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping

2018-05-01

Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.

Separative analyses of a chromatographic column packed with a core-shell adsorbent for lithium isotope separation

International Nuclear Information System (INIS)

Sugiyama, T.; Sugura, K.; Enokida, Y.; Yamamoto, I.

2015-01-01

Lithium-6 is used as a blanket material for sufficient tritium production in DT fueled fusion reactors. A core-shell type adsorbent was proposed for lithium isotope separation by chromatography. The mass transfer model in a chromatographic column consisted of 4 steps, such as convection and dispersion in the column, transfer through liquid films, intra-particle diffusion and and adsorption or desorption at the local adsorption sites. A model was developed and concentration profiles and time variation in the column were numerically simulated. It became clear that core-shell type adsorbents with thin porous shell were saturated rapidly relatively to fully porous one and established a sharp edge of adsorption band. This is very important feature because lithium isotope separation requires long-distance development of adsorption band. The values of HETP (Height Equivalent of a Theoretical Plate) for core-shell adsorbent packed column were estimated by statistical moments of the step response curve. The value of HETP decreased with the thickness of the porous shell. A core-shell type adsorbent is, then, useful for lithium isotope separation. (authors)

Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

Energy Technology Data Exchange (ETDEWEB)

Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2017-06-15

Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

Electron-Stimulated Desorption of Positive Ions from Methanol Adsorbed on a Solid Ar Substrate

Science.gov (United States)

Kawanowa, H.; Hanatani, K.; Gotoh, Y.; Souda, R.

Electron-stimulated desorption (ESD) of positive ions from weakly physisorbed molecules has been investigated. From methanol adsorbed on a solid Ar substrate, the protonated cluster ions of the type H+(CH3OH)n (n = 1 - 4) are emitted, together with the fragment ions such as CHn+ (n = 0 - 3), H3O+, CHO+, CH3O+, etc. The yields of these ions are markedly enhanced at the smallest coverage and decay steeply with increasing coverage. Coulomb explosion between valence holes confined in adsorbed nanoclusters is responsible for the enhanced ion yields. Very few ions except for H+ are emitted from a thick layer as well as nanoclusters adsorbed directly on a metal substrate due to the delocalization of valence holes.

A new inorganic adsorbent of (n, {gamma}){sup 99}Mo for the practical {sup 99m}Tc generator

Energy Technology Data Exchange (ETDEWEB)

Hasegawa, Y; Nishino, M [Kaken Co., Asahi, Ibaraki (Japan). Functional Materials Inst.; Ishikawa, K; Tatenuma, K; Kurosawa, K; Tanase, M; Yamabayashi, H

1998-10-01

Technetium-99m is used most widely in diagnostic nuclear medicine. By the milking procedure, it is normally eluted as the daughter nuclide from {sup 99}Mo adsorbed in an alumina column as a generator. Molybdenum-99 with high specific activity has been produced in large quantities from the fission of irradiated {sup 235}U. However, the production process involves the troublesome handling process of various fission products in the high radiation field and generates highly radioactive and poisonous wastes. To avoid these drawbacks, some gel generators have been proposed. They are of zirconium molybdate, zirconium molybdophosphate or titanium molybdate gel, which are able to be applied to {sup 99}Mo obtained easily by (n, {gamma}) reaction of natural Mo. However, it has become apparent that the gel has been prepared only under certain strict conditions such as concentrations and reaction temperature, and eventually the elution rate of {sup 99m}Tc was unstable because of any influences of the gel preparation conditions. We have developed and reported a new inorganic adsorbent (Polyinorganic Zirconium Compound: PZC) of {sup 99}Mo with a low specific activity obtained by (n, {gamma}) reaction to overcome the problems of gel generators above mentioned. PZC was prepared from ZrCl{sub 4} and isopropyl alcohol. The adsorbed amount of {sup 99}Mo (Mo) to PZC was about 200 mg/g-PZC, and the yield of {sup 99m}Tc was about 80%. And the breakthrough of {sup 99}Mo was less than 0.5%. In this paper, the properties of the improved PZC, performance of generators with {sup 99}Mo loaded from 0.5 to 470 MBq, and a method to reduce the breakthrough of {sup 99}Mo are described. (author)

Thickness and structure of the water film deposited from vapour on calcite surfaces

DEFF Research Database (Denmark)

Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.

2010-01-01

Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

Characterization of interfaces between metals and organic thin films by electron and ion spectroscopies

Energy Technology Data Exchange (ETDEWEB)

Schmid, Martin

2012-01-18

at elevated temperatures (400 K). A further system whose properties were also mostly determined by a chemical reaction between substrate and adsorbate was observed in form of the interface between calcium and the polymer poly(3-hexylthiophene) (rr-P3HT). It could be shown that a reduction of the temperature during the metal deposition (130 K) results in the formation of a significantly better, i.e. sharper, interface between calcium and the semiconducting thiophene polymer. Furthermore we examined the model catalyst Pd/Al{sub 2}O{sub 3}/NiAl(110) (where an adsorbate layer of Pd nanoparticles provides the catalytic activity) covered with a thin film of the room temperature ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, [BMIM][Tf{sub 2}N]. At room temperature and 100 C, [BMIM][Tf{sub 2}N] showed no indications for decomposition processes. However, at 200 C, the catalyst surface is mostly comprised of decomposition products of the ionic liquid, efficiently blocking the catalytically active sites on the Pd nanoparticles. Similar experiments on the pristine Al{sub 2}O{sub 3}/NiAl(110) without the Pd nanoparticles showed a complete desorption of the ionic liquid film upon heating to sufficiently high temperatures.

Differences in structure and magnetic behavior of Mn-AlN films due to substrate material

International Nuclear Information System (INIS)

Sato, Takanobu; Nakatani, Ryoichi; Endo, Yasushi; Kirino, Fumiyoshi

2009-01-01

The structure and magnetic behavior of Mn-AlN (Al 1-x Mn x N, x = 0.03, 0.04) films deposited on thermally oxidized Si (001) substrates and sapphire (0001) substrates were studied. Mn-AlN films deposited on each substrate had a wuertzite-type AlN phase with a preferentially oriented c-axis. Mn-AlN films that were deposited on Si (001) substrate exhibited paramagnetic behavior. In addition to paramagnetic behavior, weak ferromagnetic behavior with curie temperatures higher than room temperature were observed for Mn-AlN films deposited on sapphire (0001) substrates.

Magnetic-supported cucurbituril: A recyclable adsorbent for the ...

Indian Academy of Sciences (India)

Administrator

removal of humic acid from simulated water. QIN YANG* ... The commonly used adsorbents are activated carbon. (Deng and Bai ... Q[n] is practically insoluble in all common organic solvents. ... Q[n] has other advantages such as its strong rigid structure .... and it does not result in the phase change of Fe3O4. In addition ...

Surface characterization of polyethylene terephthalate films treated by ammonia low-temperature plasma

International Nuclear Information System (INIS)

Zheng Zhiwen; Ren Li; Feng Wenjiang; Zhai Zhichen; Wang Yingjun

2012-01-01

In order to study the surface characterization and protein adhesion behavior of polyethylene terephthalate film, low temperature ammonia plasma was used to modify the film. Effects of plasma conditions of the surface structures and properties were investigated. Results indicated that surface hydrophilicity of polyethylene terephthalate was significantly improved by ammonia plasma treatment. Ammonia plasma played the role more important than air treatment in the process of modification. Furthermore, by Fourier Transform Infrared spectra some new bonds such as -N=O and N-H which could result in the improvement of the surface hydrophilicity were successfully grafted on the film surface. Atom force microscope experiments indicated that more protein adsorbed on hydrophobic surfaces than hydrophilic ones, and the blobs arranged in a straight line at etching surface by plasma. Modified membrane after ammonia plasma treatment had a good cell affinity and could be effective in promoting the adhesion and growth of cells on the material surface. Timeliness experiments showed that the plasma treatment gave the material a certain performance only in a short period of time and the hydrophobicity recovered after 12 days.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

International Nuclear Information System (INIS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-01-01

Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

Energy Technology Data Exchange (ETDEWEB)

Gao, Qingxue [School of Physics, Shandong University, Jinan, 250100 (China); Liu, Rong [Department of Fundamental Theories, Shandong Institute of Physical Education and Sports, Jinan 250063 (China); Xiao, Hongdi, E-mail: hdxiao@sdu.edu.cn [School of Physics, Shandong University, Jinan, 250100 (China); Cao, Dezhong; Liu, Jianqiang; Ma, Jin [School of Physics, Shandong University, Jinan, 250100 (China)

2016-11-30

Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

[Spectroscopic study on film formation mechanism and structure of composite silanes-V-Zr passive film].

Science.gov (United States)

Wang, Lei; Liu, Chang-sheng; Shi, Lei; An, Cheng-qiang

2015-02-01

A composite silanes-V-Zr passive film was overlayed on hot-dip galvanized steel. Attenuated total reflection Fourier transformed infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectrometer (XPS) and radio frequency glow discharge optical emission spectrometry (rf-GD-OES) were used to characterize the molecular structure of the silanes-V-Zr passive film. The mechanism of film formation was discussed: The results show that the silane molecules are crosslinked as the main film former and inorganic inhibitor is even distributed in the film. The fitting peak of 100.7 eV in XPS single Si2p energy range spectra of the composite silanes-V-Zr passive film and the widening and strengthening of the Si--O infrared absorption peak at 1100 cm(-1) indicate that the silanes were adsorbed on the surface of zinc with chemical bond of Si--O--Zn, and the silane molecules were connected with each other by bond of Si--O--Si. Two characteristic absorption peaks of amide at 1650 and 1560 cm(-1) appear in the infrared spectroscopy of the composite silanes-V-Zr passive film, and a characteristic absorption peak of epoxy groups at 910 cm(-1) disappears in the infrared spectroscopy of the passive film. The results indicate that gamma-APT can be prepared through nucleophilic ring-opening of ethylene oxide in gamma-GPT molecule to form C--N covalent bonds. The rf-GD-OES results indicate that there is a oxygen enriched layer in 0.3 microm depth of the composite silanes-V-Zr passive film. Moreover, ZrF4, ZrO2 and some inorganic matter obtained by the reaction during the forming processof the composite silanes-V-Zr passive film are distributed evenly throughout the film. According to the film composition, the physical processes and chemical reactions during the film forming process were studied by using ATR-FTIR. Based on this, the film forming mechanism was proposed.

AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

OpenAIRE

Wang, Wenbo; Fu, Yong Qing; Chen, Jinju; Xuan, Weipeng; Chen, Jinkai; Mayrhofer, Paul; Duan, Pengfei; Bittner, Elmar; Luo, Jikui

2016-01-01

This paper reports the characterization of scandium aluminum nitride (Al1−x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

2016-04-04

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

Microstructure and tribological properties of NbN-Ag composite films by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Ju, Hongbo; Xu, Junhua, E-mail: jhxu@just.edu.cn

2015-11-15

Highlights: • NbN-Ag films were deposited by reactive magnetron sputtering. • The fcc-NbN, hcp-NbN and fcc-Ag coexisted in NbN-Ag films. • The incorporation of Ag into NbN matrix led to the decrease of hardness. • The films (9.2–13.5 at.% Ag) were found to be optimized for wear resistance tools. - Abstract: Recently, the chameleon thin films were developed with the purpose of adjusting their chemistry at self-mating interfaces in response to environmental changes at a wide temperature range. However, very few studies have focused on what state the lubricious noble metal exists in the films and the tribological properties at room temperature (RT). Composite NbN-Ag films with various Ag content (Ag/(Nb + Ag)) were deposited using reactive magnetron sputtering to investigate the crystal structure, mechanical and tribological properties. A combination of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses showed that face-centered cubic (fcc) NbN, hexagonal close-packed (hcp) NbN and fcc silver coexisted in NbN-Ag films. The incorporation of soft Ag into NbN matrix led to the hardness decrease from 29.6 GPa at 0 at.% Ag to 11.3 GPa at 19.9 at.% Ag. Tribological properties of NbN-Ag films performed using dry pin-on-disc wear tests against Al{sub 2}O{sub 3} depended on Ag content to a large extent. The average friction coefficient and wear rate of NbN-Ag films decreased as Ag content increased from 4.0 to 9.2 at.%. With a further increase of Ag content, the average friction coefficient further decreased, while the wear rate increased gradually. The optimal Ag content was found to be 9.2–13.5 at.%, which showed low average friction coefficient values of 0.46–0.40 and wear rate values of 1.1 × 10{sup −8} to 1.7 × 10{sup −8} mm{sup 3}/(mm N). 3D Profiler and Raman spectroscopy measurements revealed that the lubricant tribo-film AgNbO{sub 3} detected on the surface of the

Growth dynamics of reactive-sputtering-deposited AlN films

International Nuclear Information System (INIS)

Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

2005-01-01

We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

Disinfection of water with new chitosan-modified hybrid clay composite adsorbent

Directory of Open Access Journals (Sweden)

Emmanuel I. Unuabonah

2017-08-01

Full Text Available Hybrid clay composites were prepared from Kaolinite clay and Carica papaya seeds via modification with chitosan, Alum, NaOH, and ZnCl2 in different ratios, using solvothermal and surface modification techniques. Several composite adsorbents were prepared, and the most efficient of them for the removal of gram negative enteric bacteria was the hybrid clay composite that was surface-modified with chitosan, Ch-nHYCA1:5 (Chitosan: nHYCA = 1:5. This composite adsorbent had a maximum adsorption removal value of 4.07 × 106 cfu/mL for V. cholerae after 120 min, 1.95 × 106 cfu/mL for E. coli after ∼180 min and 3.25 × 106 cfu/mL for S. typhi after 270 min. The Brouers-Sotolongo model was found to better predict the maximum adsorption capacity (qmax of Ch-nHYCA1:5 composite adsorbent for the removal of E. coli with a qmax of 103.07 mg/g (7.93 × 107 cfu/mL and V. cholerae with a qmax of 154.18 mg/g (1.19 × 108 cfu/mL while the Sips model best described S. typhi adsorption by Ch-nHYCA1:5 composite with an estimated qmax of 83.65 mg/g (6.43 × 107 cfu/mL. These efficiencies do far exceed the alert/action levels of ca. 500 cfu/mL in drinking water for these bacteria. The simplicity of the composite preparation process and the availability of raw materials used for its preparation underscore the potential of this low-cost chitosan-modified composite adsorbent (Ch-nHYCA1:5 for water treatment.

Fabrication of AlN thin films on different substrates at ambient temperature

CERN Document Server

Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

2002-01-01

Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

Spacer layer effect and microstructure on multi-layer [NdFeB/Nb]n films

International Nuclear Information System (INIS)

Tsai, J.-L.; Yao, Y.-D.; Chin, T.-S.; Kronmueller, H.

2002-01-01

Spacer layer effect on multi-layer [NdFeB/Nb] n films has been investigated from the variation of magnetic properties and microstructure of the films. From a HRTEM cross-section view observation, the average grain size of [NdFeB/Nb] n multi-layers was controlled by both annealing temperature and thickness of NdFeB layer. Selected area diffraction pattern indicated that the structure of Nb spacer layer was amorphous. The grain size and coercivity of [NdFeB x /Nb] n films change from 50 nm and 16.7 kOe to 167 nm and 9 kOe for films with x=40 nm, n=10 and x=200 nm, n=2, respectively

Improved optical response and photocatalysis for N-doped titanium oxide (TiO2) films prepared by oxidation of TiN

International Nuclear Information System (INIS)

Wan, L.; Li, J.F.; Feng, J.Y.; Sun, W.; Mao, Z.Q.

2007-01-01

In order to improve the photocatalytic activity, N-doped titanium oxide (TiO 2 ) films were obtained by thermal oxidation of TiN films, which were prepared on Ti substrates by ion beam assisted deposition (IBAD). The dominating rutile TiO 2 phase was found in films after thermal oxidation. According to the results of X-ray photoelectron spectroscopy (XPS), the residual N atoms occupied O-atom sites in TiO 2 lattice to form Ti-O-N bonds. UV-vis spectra revealed the N-doped TiO 2 film had a red shift of absorption edge. The maximum red shift was assigned to the sample annealed at 750 deg. C, with an onset wavelength at 600 nm. The onset wavelength corresponded to the photon energy of 2.05 eV, which was nearly 1.0 eV below the band gap of pure rutile TiO 2 . The effect of nitrogen was responsible for the enhancement of photoactivity of N-doped TiO 2 films in the range of visible light

The adsorber loop concept for the contact between seawater and adsorber granulate

International Nuclear Information System (INIS)

Koske, P.H.; Ohlrogge, K.

1984-01-01

For the production of 1 kg uranium from seawater about 10 9 kg seawater - depending on the extraction efficiency - have to be processed in a production plant. Such high seawater flows have to be put through adsorber beds the area of which depends on the flow velocity of the water in the bed. For a typical polyamidoxim (PAO) adsorber granulate with a grain size distribution of 0.3 to 1.2 mm the velocity in a fluidized bed is limited to about 1 cm/s in order to prevent carry out of the adsorber material. The consequences of this rather low bed velocity are large and expensive bed areas for technical production plants. The present paper deals with the so-called ''adsorber loop concept'' in which the adsorber granulate is carried along with the seawater to be processed in a loop-like configuration and is separated again from the water before this is leaving the adsorption unit. This concept enables considerably higher seawater velocities thus reducing the bed area. Theoretical considerations are presented together with experimental results from field tests. (author)

EDTA-functionalized clinoptilolite nanoparticles as an effective adsorbent for Pb(II) removal.

Science.gov (United States)

Eshraghi, Farahnaz; Nezamzadeh-Ejhieh, Alireza

2018-03-08

An efficient Pb(II) adsorbent was prepared by the modification of clinoptilolite nanoparticles (CpN) with ethylenediaminetetraacetic acid (EDTA). Samples were characterized by XRD, FT-IR, SEM, BET, TG-DTG, CHNS analyzer, and energy dispersive analysis X-ray spectroscopy (EDX). The experiments were designed by response surface methodology (RSM) based on central composite design (CCD) that suggested a quadratic model to predict the conditions and the interactions between the variables including adsorbent dosage, removal time, C Pb , and its solution pH. Adequacy of the suggested quadratic model was judged by ANOVA. The maximum Pb(II) removal of 0.27 mmol Pb(II) /g ads was achieved in optimal run including adsorbent dosage 2 g L -1 , removal time 271 min, C Pb 22.51 mmol L -1 , and Pb(II) solution pH 5.88. In binary metal cation systems including 1000 mg L -1 with respect to both Pb(II) and interfering cations, good selectivity of CpN-EDTA adsorbent was observed towards Pb(II) among the tested cations except Fe(III). Adsorption isotherm of lead removal by the adsorbent was well modeled by Langmuir equation, indicating a monolayer sorption of Pb(II) onto the adsorbent. The pseudo-second-order rate equation, indicating chemical reaction rate limiting step for the process, well modeled the kinetic of the process. An exothermic and spontaneous process was confirmed by the negative ∆H and ∆G.

Ab-initio studies of the Sc adsorption and the ScN thin film formation on the GaN(000-1)-(2 × 2) surface

International Nuclear Information System (INIS)

Guerrero-Sánchez, J.; Sánchez-Ochoa, F.; Cocoletzi, Gregorio H.; Rivas-Silva, J.F.; Takeuchi, Noboru

2013-01-01

First principles total energy calculations have been performed to investigate the initial stages of the Sc adsorption and ScN thin film formation on the GaN(000-1)-(2 × 2) surface. Studies are done within the periodic density functional theory as implemented in the PWscf code of the Quantum ESPRESSO package. The Sc adsorption at high symmetry sites results in the bridge site as the most stable structure. When a Sc monolayer is deposited above the surface the T4 site results as the most stable geometry. The Sc migration into the first Ga monolayer induces the Ga displaced ad-atom to be adsorbed at the T4-2 site. A ScN bilayer may be obtained under the Ga monolayer. Finally a ScN bilayer may be formed in the wurtzite phase above the surface. The formation energy plots show that in the moderate Ga-rich conditions we obtain the formation of a ScN bilayer under the gallium monolayer. However at N-rich conditions the formation of ScN bilayer above the surface is the most favorable structure. We report the density of states to explain the electronic structure of the most favorable geometries. - Highlights: • Studies of the initial stages in the formation of Sc and ScN structures on GaN • In the adsorption of Sc on the GaN the Br site is the most favorable geometry. • When a Sc replaces a Ga of the first monolayer the displaced Ga occupies a T4-2 site. • For Ga-rich conditions there is formation of ScN under the Ga monolayer. • In N-rich conditions there is formation of ScN in the wurtzite phase

Fruit waste adsorbent for ammonia nitrogen removal from synthetic solution: Isotherms and kinetics

Science.gov (United States)

Zahrim, AY; Lija, Y.; Ricky, L. N. S.; Azreen, I.

2016-06-01

In this study, four types of watermelon rind (WR) adsorbents; fresh WR, modified WR with sodium hydroxide (NaOH), potassium hydroxide (KOH) and sulphuric acid (H2SO4) were used as a potential low-cost adsorbent to remove NH3-N from solution. The adsorption data were fitted with the adsorption isotherm and kinetic models to predict the mechanisms and kinetic characteristics of the adsorption process. The equilibrium data agreed well with Langmuir isotherm model with highest correlation (R2=1.00). As for kinetic modelling, the adsorption process follows pseudo-second order for all four types of adsorbents which has R2 value of 1.0 and calculated adsorption capacity, Qe of 1.2148mg/g. The calculated Qe for pseudo-second order has the smallest difference with the experimental Qe and thus suggest that this adsorption process is mainly governed by chemical process involving cations sharing or exchange between WR adsorbent and NH3-N in the solution.

Surface free energy of CrN x films deposited using closed field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Sun, C.-C.; Lee, S.-C.; Dai, S.-B.; Fu, Y.-S.; Wang, Y.-C.; Lee, Y.-H.

2006-01-01

CrN x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN x films at temperatures in the range 20-170 deg. C. In this study CrN x thin films with CrN, Cr(N), Cr 2 N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr +2 emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 deg. C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 deg. C. This is lower than that of Cr(N), Cr 2 N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method

Directory of Open Access Journals (Sweden)

C. Panatarani

2016-02-01

Full Text Available ZnO thin films were fabricated by spray pyrolysis (SP method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The photoluminescence (PL with excitation wave length of 260 nm shows that ZnO:Ga and ZnO:N films emitted UV emission at ∼393 and ∼388 nm, respectively and the films resistivity was 7.12 and 12.80 Ohm-cm respectively. The electroluminescence of the p-ZnO : N/n-ZnO:Ga/ITO structure was obtained by applying forward bias of 5 volt with 30 mA current, resulting in a 3.35 volt threshold bias with the peak electroluminescence in UV-blue range.

Composition, structure and properties of SiN x films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Yao, Zh.Q.; Yang, P.; Huang, N.; Sun, H.; Wan, G.J.; Leng, Y.X.; Chen, J.Y.

2005-01-01

Silicon nitride (SiN x ) thin films are of special interest in both scientific research and industrial applications due to their remarkable properties such as high thermal stability, chemical inertness, high hardness and good dielectric properties. In this work, SiN x films were fabricated by pulsed reactive closed-field unbalanced magnetron sputtering of high purity single crystal silicon targets in an Ar-N 2 mixture. The effect of N 2 partial pressure on the film composition, chemical bonding configurations, surface morphology, surface free energy, optical and mechanical properties were investigated. We showed that with increased N 2 partial pressure, the N to Si ratio (N/Si) in the film increased and N atoms are preferentially incorporated in the NSi 3 stoichiometric configuration. It leads the Si-N network a tendency to chemical order. Films deposited at a high N 2 fraction were consistently N-rich. The film surface transformed from a loose granular structure with microporosity to a homogeneous, continuous, smooth and dense structure. A progressive densification of the film microstructure occurs as the N 2 fraction is increased. The reduced surface roughness and the increased N incorporation in the film give rise to the increased contact angle with double-distilled water from 24 o to 49.6 o . To some extent, the SiN x films deposited by pulsed magnetron sputtering are hydrophilic in nature. The as-deposited SiN x films exhibit good optical transparency in the visible region and the optical band gap E opt can be varied from 1.68 eV for a-Si to 3.62 eV for SiN x films, depending on the synthesis parameters. With the increase of the N/Si atomic ratio, wear resistance of the SiN x films was improved, a consequence of increased hardness and elastic modulus. The SiN x films have lower friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction, where the SiN x films experienced only fatigue wear

Study of the oxidation resistance of ZrxNand ZrxSi1-xN thin films deposited by reactive magnetron sputtering; Estudo da resistencia a oxidacao de filmes finos de ZrxN e ZrxSi1-xN depositados por magnetron sputtering reativo

Energy Technology Data Exchange (ETDEWEB)

Fernandez, D.R.; Freitas, F.G.R.; Felix, L.C.; Carvalho, R.G.; Fontes Junior, A.S.; Tentardini, E.K., E-mail: daniel.angel0275@gmail.com [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais; Silva Junior, H. da [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil)

2016-07-01

The objective of this work is to evaluate the oxidation resistance on pure zirconium nitride thin films and with silicon addition (ZrN and ZrSiN respectively). The thin films deposition were performed using reactive magnetron sputtering. The coatings were characterized by Rutherford Backscattering Spectroscopy (RBS), grazing angle X ray diffraction (GAXRD), scanning electronic microscopy (SEM-FEG) and oxidation tests starting from 500°C to 700°C. This study evaluated thin films with silicon content up to 14,9 at.%. GAXRD results showed only ZrN characteristics peaks, which allow the inference that Si3N4 has an amorphous structure. Oxidation tests demonstrate that the film with highest silicon content shows an increase of 200°C in oxidation temperature when compared with ZrN pure thin film. (author)

Decomposition of multilayer benzene and n-hexane films on vanadium.

Science.gov (United States)

Souda, Ryutaro

2015-09-21

Reactions of multilayer hydrocarbon films with a polycrystalline V substrate have been investigated using temperature-programmed desorption and time-of-flight secondary ion mass spectrometry. Most of the benzene molecules were dissociated on V, as evidenced by the strong depression in the thermal desorption yields of physisorbed species at 150 K. The reaction products dehydrogenated gradually after the multilayer film disappeared from the surface. Large amount of oxygen was needed to passivate the benzene decomposition on V. These behaviors indicate that the subsurface sites of V play a role in multilayer benzene decomposition. Decomposition of the n-hexane multilayer films is manifested by the desorption of methane at 105 K and gradual hydrogen desorption starting at this temperature, indicating that C-C bond scission precedes C-H bond cleavage. The n-hexane dissociation temperature is considerably lower than the thermal desorption temperature of the physisorbed species (140 K). The n-hexane multilayer morphology changes at the decomposition temperature, suggesting that a liquid-like phase formed after crystallization plays a role in the low-temperature decomposition of n-hexane.

Positron beam study of indium tin oxide films on GaN

International Nuclear Information System (INIS)

Cheung, C K; Wang, R X; Beling, C D; Djurisic, A B; Fung, S

2007-01-01

Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 deg. C without oxygen and at 200 deg. C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 x 10 -3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy

Effect of N{sub 2} flow rate on the properties of N doped TiO{sub 2} films deposited by DC coupled RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Peng, Shou [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430000 (China); State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Yang, Yong, E-mail: 88087113@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); Cao, Xin [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China); School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116000 (China); Wang, Yun; Xu, Genbao [State Key Laboratory of Advanced Technology for Float Glass, Bengbu Design & Research Institute for Glass Industry, Bengbu 233000 (China)

2016-09-05

N doped TiO{sub 2} films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO{sub 2} ceramic target. The influences of N{sub 2} flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N{sub 2} flow rate. As N{sub 2} flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO{sub 2} lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N{sub 2} flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO{sub 2} films were deposited by DC coupled RF magnetron reactive sputtering. • As N{sub 2} flow rate increases, the crystallization of the deposited films degrades. • The higher N{sub 2} flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Science.gov (United States)

Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2015-03-01

InxGa1-xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In0.08Ga0.92N is achieved with a high hole concentration of more than 1018 cm-3. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Azadeh Jafari

2014-07-01

Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

TESTING OF CARBONACEOUS ADSORBENTS FOR REMOVAL OF POLLUTANTS FROM WATER

Directory of Open Access Journals (Sweden)

RAISA NASTAS

2012-03-01

Full Text Available Testing of carbonaceous adsorbents for removal of pollutants from water. Relevant direction for improving of quality of potable water is application of active carbons at various stages of water treatments. This work includes complex research dealing with testing of a broad spectrum of carbonaceous adsorbents for removal of hydrogen sulfide and nitrite ions from water. The role of the surface functional groups of carbonaceous adsorbents, their acid-basic properties, and the influence of the type of impregnated heteroatom (N, O, or metals (Fe, Cu, Ni, on removal of hydrogen sulfide species and nitrite ions have been researched. The efficiency of the catalyst obtained from peach stones by impregnation with Cu2+ ions of oxidized active carbon was established, being recommended for practical purposes to remove the hydrogen sulfide species from the sulfurous ground waters. Comparative analysis of carbonaceous adsorbents reveals the importance of surface chemistry for oxidation of nitrite ions.

Preparation of poly(vinyl alcohol) membranes grafted with N-vinyl imidazole/acrylic acid binary monomers

International Nuclear Information System (INIS)

Ajji, Zaki; Ali, Ali

2006-01-01

Poly(vinyl alcohol) films were grafted with two monomers using gamma radiation, acrylic acid and N-vinyl imidazole. The influence of different parameters on the grafting yield was investigated as: type of solvent and solvent composition, comonomer concentration and composition, addition of mineral acids, and irradiation dose. Water uptake in respect to the grafting yield was also evaluated. The ability of the grafted films to adsorb copper ions was elaborated and discussed for different grafting yields and ph values of the solution. (authors)

Nano-impact testing of TiFeN and TiFeMoN films for dynamic toughness evaluation

Energy Technology Data Exchange (ETDEWEB)

Beake, B D [Micro Materials Ltd, Willow House, Ellice Way, Yale Business Village, Wrexham LL13 7YL (United Kingdom); Vishnyakov, V M; Colligon, J S, E-mail: ben@micromaterials.co.uk [Dalton Research Institute, Manchester Metropolitan University, Manchester M1 5GD (United Kingdom)

2011-03-02

TiFeN and TiFeMoN films were deposited on silicon wafers by ion-beam-assisted deposition. Their mechanical properties were measured by nanoindentation (quasi-static) and nano-impact (dynamic) techniques. Nano-impact testing enabled assessment of their toughness and resistance to fatigue fracture under repetitive loading. At low impact forces, films with a higher resistance to plastic deformation (H{sup 3}/E{sup 2}) were much more resistant to the formation of cracks throughout the test. At higher impact forces, these films initially show impact resistance but with continued impacts they are unable to protect the Si substrate, performing as poorly as films with lower H{sup 3}/E{sup 2} and suffer delamination from the Si substrate over a large area.

Osteoblast Adhesion on Cathodic Arc Plasma Deposited Nano-Multilayered TiCrAlSiN Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kim, Sun Kyu [University of Ulsan, Ulsan (Korea, Republic of); Pham, Vuong Hung [Hanoi University of Science and Technology (HUST), Hanoi (Viet Nam)

2014-03-15

Adhesion of osteoblast cells to TiCrAlSiN thin films was evaluated in vitro. Ti and TiCrAlSiN thin films were deposited on glass substrates by cathodic arc deposition. Surface roughness and chemistry of the TiCrAlSiN thin films was characterized by AFM and EPMA, respectively. Ti and TiCrAlSiN thin films and glass coverslips were cultured with human osteoblast cells (hFOB 1.19). The cell cytoskeleton was analyzed by observing the organization of actin stress fibers and microtubules. Cell proliferation was investigated by MTT assay and visualization. Focal contact adhesion was studied by observing the vinculin density. The results indicated that the TiCrAlSiN coating significantly influenced the actin cytoskeleton and microtubule organization. Human osteoblasts hFOB attached and proliferated better on TiCrAlSiN thin films with more focal contact adhesions than on Ti thin films or glass surfaces. These results suggest that TiCrAlSiN thin films can be an implantable material where the maximum cell adhesion is required.

TaSiN nanocomposite thin films: Correlation between structure, chemical composition, and physical properties

International Nuclear Information System (INIS)

Ramírez, G.; Oezer, D.; Rivera, M.; Rodil, S.E.; Sanjinés, R.

2014-01-01

The structural and electronic properties of fcc-TaN/SiN x nanocomposite thin films deposited by reactive magnetron sputtering have been investigated as function of the N and Si contents. Our studies have been mainly focused on three different types of nanocomposite Ta x Si y N z films based on: nitrogen deficient fcc-TaN 0.88 , nearly stoichiometric fcc-TaN, and over-stoichiometric fcc-TaN 1.2 with the Si contents in the range from 0 to about 15 at.%. The optical properties were investigated by ellipsometric measurements, while the DC. electrical resistivity was measured using the van der Pauw configuration at 300 K. The optical measurements were interpreted using the standard Drude–Lorentz model. The results showed that the electronic properties are closely correlated with both the compositional and the structural modifications of the Ta x Si y N z films induced by the addition of Si atoms, and also depending on the stoichiometry of the starting fcc-TaN system. Thus, depending on both the nitrogen and the silicon contents, the fcc-Ta x Si y N z films can exhibit room temperature resistivity values ranging from 10 2 μΩ cm to about 6 × 10 4 μΩ cm. - Highlights: • TaSiN films were grown using dual magnetron sputtering system. • The physical and structural properties were correlated with the deposition parameters. • The electrical properties were influenced by the nitrogen and silicon contents on the films

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

Degradation of ZrN films at high temperature under controlled atmosphere

International Nuclear Information System (INIS)

Lu, F.-H.; Lo, W.-Z.

2004-01-01

The degradation of ZrN films deposited onto Si substrates by unbalanced magnetron sputtering was investigated over temperatures of 300-1200 deg. C in different atmospheres by analyzing changes in color and appearance, as well as microstructures. The atmospheres contained air, nitrogen, and forming gas (N 2 /H 2 =9), which exhibited drastically different oxygen/nitrogen partial pressure ratios. The resultant degradation included mainly color changes and formation of blisters on the film surface. Color change was associated with the oxidation of the nitride film, which was analyzed by looking into the Gibbs free-energy changes at various temperatures and oxygen partial pressures. Two types of blisters occurred at different temperature ranges. Several large round blisters, denoted as A-type blisters, occurring at low temperatures originated from the large residual stress in the films. Many small irregular blisters, denoted as B-type blisters, appearing at relatively high temperatures resulted from the oxidation of the film

Electrochemical, atomic force microscopy and infrared reflection absorption spectroscopy studies of pre-formed mussel adhesive protein films on carbon steel for corrosion protection

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fan, E-mail: fanzhang@kth.se [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Div. of Surface and Corrosion Science, Drottning Kristinas vaeg.51, SE-100 44 Stockholm (Sweden); Pan, Jinshan [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Div. of Surface and Corrosion Science, Drottning Kristinas vaeg.51, SE-100 44 Stockholm (Sweden); Claesson, Per Martin [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Div. of Surface and Corrosion Science, Drottning Kristinas vaeg.51, SE-100 44 Stockholm (Sweden); Institute for Surface Chemistry, P.O. Box 5607, SE-114 86 Stockholm (Sweden); Brinck, Tore [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Physical Chemistry, Division of Physical Chemistry, Teknikringen 36, SE-10044 Stockholm (Sweden)

2012-10-01

Electrochemical measurements, in situ and ex situ atomic force microscopy (AFM) experiments and infrared reflection absorption spectroscopy (IRAS) analysis were performed to investigate the formation and stability as well as corrosion protection properties of mussel adhesive protein (Mefp-1) films on carbon steel, and the influence of cross-linking by NaIO{sub 4} oxidation. The in situ AFM measurements show flake-like adsorbed protein aggregates in the film formed at pH 9. The ex situ AFM images indicate multilayer-like films and that the film becomes more compact and stable in NaCl solution after the cross-linking. The IRAS results reveal the absorption bands of Mefp-1 on carbon steel before and after NaIO{sub 4} induced oxidation of the pre-adsorbed protein. Within a short exposure time, a certain corrosion protection effect was noted for the pre-formed Mefp-1 film in 0.1 M NaCl solution. Cross-linking the pre-adsorbed film by NaIO{sub 4} oxidation significantly enhanced the protection efficiency by up to 80%. - Highlights: Black-Right-Pointing-Pointer Mussel protein was tested as 'green' corrosion protection strategy for steel. Black-Right-Pointing-Pointer At pH 9, the protein adsorbs on carbon steel and forms a multilayer-like film. Black-Right-Pointing-Pointer NaIO{sub 4} leads to structural changes and cross-linking of the protein film. Black-Right-Pointing-Pointer Cross-linking results in a dense and compact film with increased stability. Black-Right-Pointing-Pointer Cross-linking of preformed film significantly enhances the corrosion protection.

Gas Sensing Properties of Pure and Cr Activated WO3 Thick Film Resistors

Directory of Open Access Journals (Sweden)

V. B. GAIKWAD

2010-09-01

Full Text Available Thick films of WO3 (Tungsten Oxide were prepared by screen-printing techniques. The surfaces of the films were modified by dipping them into an aqueous solution of Chromium Oxide (CrO3 for different intervals of time, followed by firing at 550 oC for 30 min. The gas sensing performance of the pure and Cr2O3-modified films was tested for various gases at different temperatures. The unmodified films showed response to H2S, ethanol and cigar smoke. However Cr2O3- modified films suppresses gas sensing response to all gases except H2S. The surface modification, using dipping process, altered the adsorbate-adsorbent interactions, which gave the specific selectivity and enhanced sensitivity to H2S gas. The gas response, selectivity, thermal stability and recovery time of the sensor were measured and presented. The role played by surface chromium species to improve gas sensing performance is discussed.

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

International Nuclear Information System (INIS)

Auger, M. A.; Vazquez, L.; Sanchez, O.; Cuerno, R.; Castro, M.; Jergel, M.

2006-01-01

We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values α loc =1.0 and β loc =0.39, and global exponent values α=1.7 and β=0.67, with a coarsening exponent of 1/z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering

The growth of GaN films by alternate source gas supply hot-mesh CVD method

Energy Technology Data Exchange (ETDEWEB)

Komae, Yasuaki; Saitou, Takeshi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endoh, Tetsuo [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Faculty of Engineering, Yamagata University, Yonezawa 992-8510 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Yasui, Kanji, E-mail: kyasui@vos.nagaokaut.ac.j [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2009-04-30

Gallium nitride (GaN) films and Aluminium nitride (AlN) layers were deposited on SiC/Si (111) substrates by an alternating source gas supply or an intermittent supply of a source gas such as ammonia (NH{sub 3}), trimethylgallium (TMG) or trimethylaluminum (TMA) in a hot-mesh chemical vapor deposition (CVD) apparatus. The AlN layer was deposited as a buffer layer using NH{sub 3} and TMA on a SiC layer grown by carbonization on Si substrates using propane (C{sub 3}H{sub 8}). GaN films were grown on an AlN layer by a reaction between NH{sub x} radicals generated on a ruthenium (Ru) coated tungsten (W)-mesh and TMG molecules. An alternating source gas supply or an intermittent supply of one of the source gases during the film growth are expected to be effective for the suppression of gas phase reactions and for the enhancement of precursor migration on the substrate surface. By the intermittent supply of alkylmetal gas only during the growth of the AlN layer, the defect generation in the GaN films was reduced. GaN film growth by intermittent supply on an AlN buffer layer, however, did not lead to the improvement of the film quality.

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

Energy Technology Data Exchange (ETDEWEB)

Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2012-01-31

LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

Deposition and characterization of ZrMoN thin films by reactive magnetron sputtering

International Nuclear Information System (INIS)

Fontes Junir, A.S.; Felix, L.C.; Oliveira, G.B. de; Fernandez, D.R.; Carvalho, R.G.; Tentardini, E.K.; Silva Junior, A.H. da

2016-01-01

Thin films of ZrMoN were deposited by magnetron reactive sputtering technique in order to study the molybdenum influence on the mechanical properties and oxidation resistance of these coatings. Three thin films with molybdenum concentrations from 25 to 40 at.% were selected. The displacement of characteristic peaks of ZrN where identified by GIXRD results of films with larger Mo content. This result is indicative of the Mo accommodation in the lattice structure. Hardness tests revealed favorable results with values up to 33 GPa. Oxidation tests showed that ZrN oxidized at 500 °C with a monoclinic ZrO 2 and tetragonal formation; whereas the thin films with Mo addition impeded the formation of the monoclinic ZrO 2 phase at partial oxidation. (author)

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

International Nuclear Information System (INIS)

Araiza, J J; Sanchez, O

2009-01-01

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr 3 N 4 (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Electrical evaluation of crack generation in SiN_x and SiO_xN_y thin-film encapsulation layers for OLED displays

International Nuclear Information System (INIS)

Park, Eun Kil; Kim, Sungmin; Heo, Jaeyeong; Kim, Hyeong Joon

2016-01-01

Highlights: • Crack generation in encapsulation layers were detected by leakage current. • Atomic concentration of SiO_xN_y films affected the bending reliability. • The shapes of the crack tips were affected by the stoichiometry of the SiO_xN_y films. - Abstract: By measuring leakage current density, we detected crack generation in silicon nitride (SiN_x) and silicon oxynitride (SiO_xN_y) thin-film encapsulation layers, and correlated with the films’ water vapor permeability characteristics. After repeated bending cycles, both the changes in water vapor transmission rate and leakage current density were directly proportional to the crack density. Thick SiN_x films had better water vapor barrier characteristics in their pristine state, but cyclic loading led to fast failure. Varying the atomic concentration of the SiO_xN_y films affected their bending reliability. We attribute these differences to changes in the shape of the crack tip as the oxygen content varies.

Structural characterization of AlN films synthesized by pulsed laser deposition

International Nuclear Information System (INIS)

Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

2011-01-01

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Energy Technology Data Exchange (ETDEWEB)

Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp [International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan); Liao, Meiyong; Koide, Yasuo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sumiya, Masatomo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan)

2015-03-14

In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

Selective Hg(II) adsorption from aqueous solutions of Hg(II) and Pb(II) by hydrolyzed acrylamide-grafted PET films.

Science.gov (United States)

Rahman, Nazia; Sato, Nobuhiro; Sugiyama, Masaaki; Hidaka, Yoshiki; Okabe, Hirotaka; Hara, Kazuhiro

2014-01-01

Selective Hg(II) adsorption from aqueous solutions of Hg(II) and Pb(II) using hydrolyzed acrylamide (AAm)-grafted polyethylene terephthalate (PET) films was examined to explore the potential reuse of waste PET materials. Selective recovery of Hg(II) from a mixture of soft acids with similar structure, such as Hg(II) and Pb(II), is important to allow the reuse of recovered Hg(II). An adsorbent for selective Hg(II) adsorption was prepared by γ-ray-induced grafting of AAm onto PET films followed by partial hydrolysis through KOH treatment. The adsorption capacity of the AAm-grafted PET films for Hg(II) ions increased from 15 to 70 mg/g after partial hydrolysis because of the reduction of hydrogen bonding between -CONH2 groups and the corresponding improved access of metal ions to the amide groups. The prepared adsorbent was characterized by Fourier transform infrared spectroscopy and scanning electron microscopy. The absorbent film showed high selectivity for the adsorption of Hg(II) over Pb(II) throughout the entire initial metal concentration range (100-500 mg/L) and pH range (2.2-5.6) studied. The high selectivity is attributed to the ability of Hg(II) ions to form covalent bonds with the amide groups. The calculated selectivity coefficient for the adsorbent binding Hg(II) over Pb(II) was 19.2 at pH 4.5 with an initial metal concentration of 100 mg/L. Selective Hg(II) adsorption equilibrium data followed the Langmuir model and kinetic data were well fitted by a pseudo-second-order equation. The adsorbed Hg(II) and Pb(II) ions were effectively desorbed from the adsorbent film by acid treatment, and the regenerated film showed no marked loss of adsorption capacity upon reuse for selective Hg(II) adsorption.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

Science.gov (United States)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

Science.gov (United States)

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

2015-01-05

Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

Improvement of the adhesion strength between copper plated layer and resin substrate using a chemically adsorbed monolayer

Directory of Open Access Journals (Sweden)

Tsuchiya K.

2013-08-01

Full Text Available With reducing the size and weight of electric devices, high-tensile, light and fine copper wire is demanded. So the production technique of a copper wire plated on a super fiber resin (Vectran film was researched for improving the adhesion strength between the copper and the resin. In this study, we used the Cu2+ or Pd2+ complex prepared with a chemically adsorbed monolayer (CAM to improve the adhesion strength between the copper plated layer and the Vectran film. As the result of scotch tape test, it was observed that the adhesion strength between the copper plated layer and Vectran film was improved by the Cu2+ or Pd2+ complex CAM.

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

Science.gov (United States)

Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

2014-09-02

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

Science.gov (United States)

Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

2014-02-04

Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

P-MoS2 / n-CdS thin film heterojunction

International Nuclear Information System (INIS)

El Maliki, H.; Gourmelon, E.; Bernede, J.C.; Pouzet, J.; Mebarki, M.; Khelil, A.; Zoaeter, M.

1999-01-01

Full text.Layered transition metal dichacolgenides such as MoS 2 are semiconductors that can be good candidates for solar energy conversion. Photo-electrochemical cells based on single crystals have achieved and efficiency of 17% (1). However, up to day, no solid rectifying contact has been put in evidence in the case of MoS 2 thin films.. Recently we have shown that such high crystalline quality MoS 2 films can be obtained onto textured tungsten slides. This allowed to try to grow sandwich rectifying structures. The bottom electrode will be W, MoS 2 being p-type, the n type film used was CdS and the upper electrode was indium. W foils textured along the (h00) direction were used as substrate and bottom electrode. The use of a W (textured) substrate induces the texturation of the MoS 2 films along the (001) direction when after evaporation of the constituents the films were annealed at T=1073 K for half an hour under argon atmosphere. Upon the MoS 2 a CdS thin film was deposited by chemical bath deposition (CBD). CdS thin films were prepared classically from a solution of cadmium sulfate, thiourea in hydrazine and ammonia. Ammonia was used adjust the solution pH to a value between 9 and 10. Bath temperature has been held constant at 343 K. Thin deposit films of CdS were yellow colored. They were constituted of an homogenous and adherent layer with a thickness of about 100 nm. It has been shown by x-ray diffraction the they were crystallized in their hexagonal structure. At least an indium film was deposited in order to achieve the structure M/MoS 2 p/CdSn/M. In order to check the equality of the W/MoS 2 contact, W/MoS 2 /W samples were also carried out by sputtering deposition of the tungsten upper electrode (300 nm thick). The thickness of the MoS 2 layers was about 500 nm. The J-V characteristics of a W/MoS 2 /W sample are ohmic. Moreover the resistance deduced from the slope ΔV/ΔI increases when the temperature decreases, which shows that there is not any

Influence of ion bombardment on structure and properties of TiZrN thin film

Energy Technology Data Exchange (ETDEWEB)

Lin, Yu-Wei, E-mail: james722@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories Taiwan (China); Huang, Jia-Hong; Yu, Ge-Ping [Department of Engineering and System Science, National Tsing Hua University, Taiwan (China); Hsiao, Chien-Nan; Chen, Fong-Zhi [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

2015-11-01

Highlights: • (Ti,Zr)N thin films were produced using dual guns with Ti and Zr targets. • Ti{sub 0.5}Zr{sub 0.5}N shows excellent hardness of 37.8 GPa with exhibiting (1 1 1) preferred orientation. • Resistivity is inverse proportional to the packing density. • Hardness is proportional to the packing density. - Abstract: The study is focused on the characterization of TiZrN thin film by controlling the behavior of ion bombardment. Thin films are grown using radio frequency magnetron sputtering process on Si wafer. The negative bias voltage ranging from −20 V to −130 V was applied to the substrate. The ion current density increases rapidly as substrate bias is lower than −60 V, then slightly increases as the critical value about −60 V is exceeded. At the substrate bias of −60 V, the ion current density is close to 0.56 mA/cm{sup 2}. The resistivity measured by four-point probe decreases from conditions −20 V to −60 V and then increases for substrate bias increases from −60 V to −130 V. The resistivity of TiZrN films is contributed from the packing factor. The N/TiZr ratios about 1 were measured by Rutherford backscattering spectrometer, and the packing factors of TiZrN films can also be obtained by the results of RBS. Field Emission scanning electron microscope (FEG-SEM) is used to characterize the thickness and structure of the deposited TiZrN film. X-ray diffraction (XRD) is used to determine the preferred orientation and lattice parameter. The precursor results of XRD show that all the coating samples exhibited (1 1 1) preferred orientation, and the hardness values of TiZrN films were ranging from 20 to 40 GPa. To sum up the precursor studies, the TiZrN films which can improve the properties from TiN and ZrN is a new ceramic material with higher potential. Following the advance process and analysis research, the structure and properties can be correlated and as a reference for industry application.

Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

Directory of Open Access Journals (Sweden)

Cheng-Chang Yu

2014-01-01

Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

Separation of stress-free AlN/SiC thin films from Si substrate

International Nuclear Information System (INIS)

Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

2016-01-01

We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

Modification of H2O adsorbed Si(100)-(2 x 1) surface by photon and electron beam

International Nuclear Information System (INIS)

Moon, S.W.; Chung, S.M.; Hwang, C.C.; Ihm, K.W.; Kang, T.-H.; Chen, C.H.; Park, C.-Y.

2004-01-01

Full text: Oxidation of silicon has been the subject of intense scientific and technological interest due to the several uses of thin oxide films as insulating layers in microelectronic devices. The great strides have been made in understanding about the formation and thermal evolution of the Si/SiO 2 interface. In this presentation, we provide synchrotron radiation photoemission spectroscopy (SRPES) and photoemission electron microscope (PEEM) results, showing how a H 2 O adsorbed Si(100) surface evolves into an ultra-thin silicon oxide m when exposed to monochromatized synchrotron radiation and electron beam at room temperature. All SRPES, PEEM experiments have been performed at the beam line, 4B1, of Pohang Light Source (PLS) in Korea. Water dissociates into OH(a) and H(a) species upon adsorption on the Si(100)-(2 - 1) at room temperature. The bonding (b 2 ) and antibonding (a 1 ) OH orbital and the oxygen lone pair orbital (b 1 ) from the dissociated OH and H species has been identified in ultraviolet photoemission spectra (UPS). These structures gradually changed and a new silicon oxide peak appeared with the photon/E-beam irradiation. This indicates that the H 2 O adsorbed on Si surface transforms into a thin silicon oxide film by photon/E-beam irradiation. We have shown in our PEEM images that one can make micro-patterns on silicon surface by using the photon induced surface modification. The fabricated patterns can be clearly identified through the inverse contrast images between photon exposed region and unexposed one. The near edge x-ray absorption fine structure (NEXAFS) results revealed that the OH adsorbed Si surface transforms into a thin silicon oxide film by photon irradiation

The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System

Science.gov (United States)

Jagannadham, K.

2018-01-01

TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determined. Thermal conductivity and interface thermal conductance between different layers in the films are evaluated by the transient thermo reflectance (TTR) and three-omega (3- ω) methods. The results showed that the thermal conductivity of the TiC films increased with temperature. The thermal conductivity of TiC in the absence of TiN is dominated by phonon contribution. The electronic contribution to the thermal conductivity of TiC in the presence of TiN is found to be more significant. The interface thermal conductance of the TiC/TiN interface is much larger than that of interfaces at Au/TiC, TiC/Si, or TiN/Si. The interface thermal conductance between TiC and TiN is reduced by the layer formed as a result of interdiffusion.

Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

International Nuclear Information System (INIS)

Shih, Huan-Yu; Chen, Miin-Jang; Lin, Ming-Chih; Chen, Liang-Yih

2015-01-01

The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Positronium chemistry in porous adsorbents

International Nuclear Information System (INIS)

Foti, G.; Nagy, L.G.; Moravcsik, G.; Schay, G.

1981-01-01

Kinetic studies on the annihilation of orthopositronium in porous adsorbents have been performed using lifetime spectroscopy. The positron source applied was 22 Na with 0.2 MBq activity. The adsorbents investigated were silica gels of different particle size and pore structure. The appearance of the long-lived component in the lifetime spectra can be explained by the diffusion of the orthopositronium into the pores affected by the particle size and the pore size of the adsorbent, the coverage on it and the chemical nature of the adsorbate. The long-term aim of the work is to determine and to explain these effects. (author)

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

Science.gov (United States)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Mn doped GaN thin films and nanoparticles

Czech Academy of Sciences Publication Activity Database

Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

2012-01-01

Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS{sub 2} films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Chromik, Š. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Sojková, M., E-mail: michaela.sojkova@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Vretenár, V. [STU Centre for Nanodiagnostics, Vazovova 5, 812 43 Bratislava (Slovakia); Rosová, A.; Dobročka, E.; Hulman, M. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia)

2017-02-15

Highlights: • Observation of the epitaxial growth of the MoS{sub 2} film on the GaN/AlGaN/GaN (0001) substrate and c-axis oriented nanocrystalline MoS{sub 2} film on the Si (100) substrate. • Dependence of the Raman peak position on the crystal structure of MoS{sub 2} film. • Non-linear thickness dependence on the number of laser pulses using PLD from the stoichiometric target. - Abstract: Very thin MoS{sub 2} films were prepared on hexagonal GaN/AlGaN/GaN (0001) and Si (100) substrates from a stoichiometric target by a pulsed laser deposition. Combined results from Raman and X-ray reflectivity measurements have shown that the thinnest samples are 2–2.5 nm thick. The thickness increases with the number of laser pulses applied albeit no simple direct proportion between the two quantities has been observed. Concerning the stoichiometry, the distribution of Mo and S elements within as-deposited films is rather complex. The stoichiometric MoS{sub 2} is making-up only a part of the film. In spite of this, selected area electron diffraction studies have clearly confirmed that the films deposited on Si (100) are nanocrystalline and oriented perpendicularly to the substrate surface while an epitaxial growth of MoS{sub 2} films was observed on GaN/AlGaN/GaN (0001) substrates.

Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

KAUST Repository

Duan, Xiaofei

2013-09-01

The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

Oxidation and Tribological Behavior of Ti-B-C-N-Si Nanocomposite Films Deposited by Pulsed Unbalanced Magnetron Sputtering.

Science.gov (United States)

Jang, Jaeho; Heo, Sungbo; Kim, Wang Ryeol; Kim, Jun-Ho; Nam, Dae-Geun; Kim, Kwang Ho; Park, Ikmin; Park, In-Wook

2018-03-01

Quinary Ti-B-C-N-Si nanocomposite films were deposited onto AISI 304 substrates using a pulsed d.c. magnetron sputtering system. The quinary Ti-B-C-N-Si (5 at.%) film showed excellent tribological and wear properties compared with those of the Ti-B-C-N films. The steady friction coefficient of 0.151 and a wear rate of 2 × 10-6 mm3N-1m-1 were measured for the Ti-B-C-N-Si films. The oxidation behavior of Ti-B-C-N-Si nanocomposite films was systematically investigated using X-ray diffraction (XRD), and thermal analyzer with differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). It is concluded that the addition of Si into the Ti-B-C-N film improved the tribological properties and oxidation resistance of the Ti-B-C-N-Si films. The improvements are due to the formation of an amorphous SiOx phase, which plays a major role in the self-lubricant tribo-layers and oxidation barrier on the film surface or in the grain boundaries, respectively.

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Araiza, J J [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Paseo a la Bufa esq, Calzada Solidaridad s/n 98060, Zacatecas (Mexico); Sanchez, O [Departamento de Fisica e Ingenieria de Superficies, Instituto de Ciencia de Materiales de Madrid-CSIC, C/ Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain)], E-mail: olgas@icmm.csic.es

2009-06-07

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr{sub 3}N{sub 4} (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

Zeolites as alcohol adsorbents from aqueous solutions

Directory of Open Access Journals (Sweden)

Cekova Blagica

2006-01-01

Full Text Available The potential usage of zeolites as adsorbents for the removal of organic molecules from water was investigated in a series of experiments with aqueous solutions of lower alcohols. This could represent a simple solution to the problem of cleaning up industrial wastewater as well as recovering valuable chemicals at relatively low costs. Adsorption isotherms of the Langmuir type were applied, and calculations showed that the amount of propanol adsorbed on silicalite corresponded to approximately 70% of the pore volume. The adsorption process is simple, and recovery of the more concentrated products is easily done by heat treatment and/or at lowered pressures. Adsorption experiments with aqueous acetone showed that silicalite had approximately the same adsorption capacity for acetone as for n-propanol. Heats of adsorption were determined calorimetrically.

Iodine removal adsorbent histories, aging and regeneration

International Nuclear Information System (INIS)

Hunt, J.R.; Rankovic, L.; Lubbers, R.; Kovach, J.L.

1976-01-01

The experience of efficiency changes with life under various test conditions is described. The adsorbents were periodically removed from both standby and continuously operating systems and tested under various test methods for residual iodine adsorption efficiency. Adsorbent from several conventional ''sampler'' cartridges versus the bulk adsorbent was also tested showing deficiency in the use of cartridge type sampling. Currently required test conditions were found inadequate to follow the aging of the adsorbent because pre-equilibration of the sample acts as a regenerant and the sample is not tested in the ''as is'' condition. The most stringent test was found to be the ambient temperature, high humidity test to follow the aging of the adsorbent. Several methods were evaluated to regenerate used adsorbents; of these high temperature steaming and partial reimpregnation were found to produce adsorbents with near identical properties of freshly prepared adsorbents

Film thickness degradation of Au/GaN Schottky contact characteristics

International Nuclear Information System (INIS)

Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

2005-01-01

Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

Interaction of hydrogen and oxygen with continuous or granular films of palladium

Energy Technology Data Exchange (ETDEWEB)

Mikhalenko, I.I.; Prokopov, A.M.; Yagodovskii, V.D.

1986-03-01

The authors use desorption and conductometric methods in establishing the existence of three species of adsorbed hydrogen on continuous Pd films and two species on Pd films with a granular structure. Preoxidation of the surface of the continuous films does not affect the rate or kinetic order of hydrogen sorption; oxidation/reduction treatment changes these parameters, but the magnitude of Edes of hydrogen remains unchanged.

Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

Science.gov (United States)

Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

2018-03-01

High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

Theoretical Insight of Physical Adsorption for a Single-Component Adsorbent + Adsorbate System: I. Thermodynamic Property Surfaces

KAUST Repository

Chakraborty, Anutosh

2009-02-17

Thermodynamic property surfaces for a single-component adsorbent + adsorbate system are derived and developed from the viewpoint of classical thermodynamics, thermodynamic requirements of chemical equilibrium, Gibbs law, and Maxwell relations. They enable us to compute the entropy and enthalpy of the adsorbed phase, the isosteric heat of adsorption, specific heat capacity, and the adsorbed phase volume thoroughly. These equations are very simple and easy to handle for calculating the energetic performances of any adsorption system. We have shown here that the derived thermodynamic formulations fill up the information gap with respect to the state of adsorbed phase to dispel the confusion as to what is the actual state of the adsorbed phase. We have also discussed and established the temperature-entropy diagrams of (i) CaCl 2-in-silica gel + water system for cooling applications, and (ii) activated carbon (Maxsorb III) + methane system for gas storage. © Copyright 2009 American Chemical Society.

Controlled enzymatic cutting of DNA molecules adsorbed on surfaces using soft lithography

Science.gov (United States)

Auerbach, Alyssa; Budassi, Julia; Shea, Emily; Zhu, Ke; Sokolov, Jonathan

2013-03-01

The enzyme DNase I was applied to adsorbed and aligned DNA molecules (Lamda, 48.5 kilobase pairs (kbp), and T4, 165.6 kbp), stretched linearly on a surface, by stamping with a polydimethylsiloxane (PDMS) grating. The DNAs were cut by the enzyme into separated, micron-sized segments along the length of the molecules at positions determined by the grating dimensions (3-20 microns). Ozone-treated PDMS stamps were coated with DNase I solutions and placed in contact with surface-adsorbed DNA molecules deposited on a 750 polymethylmethacrylate (PMMA) film spun-cast onto a silicon substrate. The stamps were applied under pressure for times up to 15 minutes at 37 C. The cutting was observed by fluorescence microscopy imaging of DNA labeled with YOYO dye. Cutting was found to be efficient despite the steric hindrance due to surface attachment of the molecules. Methods for detaching and separating the cut segments for sequencing applications will be discussed. Supported by NSF-DMR program.

Flexible free-standing TiO2/graphene/PVdF films as anode materials for lithium-ion batteries

International Nuclear Information System (INIS)

Ren, H.M.; Ding, Y.H.; Chang, F.H.; He, X.; Feng, J.Q.; Wang, C.F.; Jiang, Y.; Zhang, P.

2012-01-01

Highlights: ► Flexible TiO 2 /graphene electrode was prepared by a solvent evaporation technique. ► PVdF was used as substance to support the TiO 2 /graphene active materials. ► The flexible films can be employed as anode materials for Li-ion battery. - Abstract: Graphene composites were prepared by hydrothermal method using titanium dioxide (TiO 2 ) adsorbed graphene oxide (GO) sheets as precursors. Free-standing hybrid films for lithium-ion batteries were prepared by adding TiO 2 /graphene composites to the polyvinylidene fluoride (PVdF)/N-methyl-2-pyrrolidone (NMP) solution, followed by a solvent evaporation technique. These films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM) and various electrochemical techniques. Flexible films show an excellent cycling performance, which was attributed to the interconnected graphene conducting network, which depressed the increasing of electric resistance during the cycling.

Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

International Nuclear Information System (INIS)

Saito, K.; Nishimura, K.; Suzuki, H.; Ohshita, Y.; Yamaguchi, M.

2008-01-01

The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be decreased by flow rate modulation growth. Many H atoms in the films grown by CBE exist as N-H or N-H 2 structures. Although a higher growth temperature was required for decreasing the H concentration ([H]), it caused a decrease in the N concentration ([N]). A reduction in [H] while keeping [N] constant was necessary. By providing an intermittent supply of Ga source while continuously supplying As and N sources, [H] effectively decreased in comparison with the [H] value in the film grown at the same temperature by conventional CBE without reducing [N

Effect of Cu Content on TiN-Cu Nanocomposite Film Properties: Structural and Hardness Studies

Directory of Open Access Journals (Sweden)

M. M. Larijani

2013-06-01

Full Text Available Titanium nitride-Copper (TiN-Cu nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. The influence of Cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. Structural properties of the films were studied by X-ray diffraction pattern. Topography of the deposited films was studied using atomic force microscopy. Film hardness was estimated by a triboscope nanoindentation system. However, X-ray photoelectron spectroscopy analysis was performed to study the surface chemical bonding states. It was found that addition of soft Cu phase above 2 at.% to TiN film drastically decreased the film hardness from 30 to 2.8 Gpa due to lubricant effect of segregated copper particles. X-ray photoelectron spectroscopy results showed that Cu and TiN phases grew separately. In our case,the formation of a solid solution or chemical bonding between Cu and Ti was rejected.

Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

Science.gov (United States)

Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

2018-03-01

n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

Study of TiC+TiN Multiple Films On Type of 316L Stainless Steel

Institute of Scientific and Technical Information of China (English)

XUE Qi; JIN Yong; HU Dong-ping; HUANG Ben-sheng; DENG Bai-quan

2004-01-01

In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported.The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CH4 to TiCl4 (mCH4/TiCl4) is changed from 1.2to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.

Study of TiC＋TiN Multiple Films On Type of 316L Stainless Steel

Institute of Scientific and Technical Information of China (English)

XUEQi; JINYong; HUDong-ping; HUANGBen-sheng; DENGBai-quan

2004-01-01

In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainlesss teel is not same as the one on carbides substrates, while the mole ratio of CH4 to TiCl4 (mCH4/TiCl4) is changed from 1.2 to 2.0. The Ti [C,N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion hetween the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.

Stress in ion-implanted CVD Si3N4 films

International Nuclear Information System (INIS)

EerNisse, E.P.

1977-01-01

The compressive stress buildup caused in chemical-vapor-deposited (CVD) Si 3 N 4 films by ion implantation is shown to be caused entirely by atomic collision effects, ionization effects being unimportant. The stress introduction rate is shown to be independent of CVD processing variables and O content of the film. The maximum attainable compressive stress change is 3.5 x 10 10 dyn/cm 2 , resulting in a maximum net compressive stress of 2 x 10 10 dyn/cm 2 for films on Si where the as-deposited films inherently have 1.5 x 10 10 dyn/cm 2 tensile stress before ion implantation. Results are presented which show that O in the films inhibits thermal annealing of the ion-implantation-induced compressive stress. Results for introduction rate and annealing effects are presented in normalized form so that workers can use the effects for intentional stress level adjustment in the films to reduce probability of cracking and detachment

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

Science.gov (United States)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Maw-Shung Lee

2014-01-01

Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

Science.gov (United States)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

Milestone Report - Complete New Adsorbent Materials for Marine Testing to Demonstrate 4.5 g-U/kg Adsorbent

Energy Technology Data Exchange (ETDEWEB)

Janke, Christopher James [ORNL; Das, Sadananda [ORNL; Oyola, Yatsandra [ORNL; Mayes, Richard T. [ORNL; Saito, Tomonori [ORNL; Brown, Suree [ORNL; Gill, Gary [PNNL; Kuo, Li-Jung [PNNL; Wood, Jordana [PNNL

2014-08-01

This report describes work on the successful completion of Milestone M2FT-14OR03100115 (8/20/2014) entitled, “Complete new adsorbent materials for marine testing to demonstrate 4.5 g-U/kg adsorbent”. This effort is part of the Seawater Uranium Recovery Program, sponsored by the U.S. Department of Energy, Office of Nuclear Energy, and involved the development of new adsorbent materials at the Oak Ridge National Laboratory (ORNL) and marine testing at the Pacific Northwest National Laboratory (PNNL). ORNL has recently developed two new families of fiber adsorbents that have demonstrated uranium adsorption capacities greater than 4.5 g-U/kg adsorbent after marine testing at PNNL. One adsorbent was synthesized by radiation-induced graft polymerization of itaconic acid and acrylonitrile onto high surface area polyethylene fibers followed by amidoximation and base conditioning. This fiber showed a capacity of 4.6 g-U/kg adsorbent in marine testing at PNNL. The second adsorbent was prepared by atom-transfer radical polymerization of t-butyl acrylate and acrylonitrile onto halide-functionalized round fibers followed by amidoximation and base hydrolysis. This fiber demonstrated uranium adsorption capacity of 5.4 g-U/kg adsorbent in marine testing at PNNL.

Study of fine films nature on the surface of copper band by photoelectron spectroscopy method

International Nuclear Information System (INIS)

Reznichenko, K.N.; Fedorov, V.N.; Shevakin, Yu.F.

1983-01-01

The composition of surface films formed on the copper band of industrial production under atmospheric conditions, its changes in thickness and determination of chemical state of the above films are studied. It has been found by the methods of X-ray photoelectronic and Auger-spectroscopy that defect formations on the surface of the copper band of industrial production represent copper oxides in the form of fine films, their change in colour from blue to dark blue probably is determined by different thickness of these defects. The said films on copper have practically identical chemical composition characterized by the presence of unequally valent copper, oxygen in various states (adsorbed and in the form of oxides), carbon and iron. By means of chemical shifts of the line Cu 2psub(3/2) and Ol s the presence in the external part of the film of CuO copper oxide is established and nearer to the interface surface film-metal-of Cu 2 O cuprous oxide which indicates a two-layer surface film structure. The presence of adsorbed carbon and iron in the film composition is a result of surface contamination

Characteristics of pellet-type adsorbents prepared from water treatment sludge and their effect on trimethylamine removal

Energy Technology Data Exchange (ETDEWEB)

Bae, Junghyun; Park, Nayoung; Kim, Goun; Lee, Choul Ho; Jeon, Jong-Ki [Kongju National University, Cheonan (Korea, Republic of); Park, Young-Kwon [University of Seoul, Seoul (Korea, Republic of)

2014-04-15

We optimized the preparation method of pellet-type adsorbents based on alum sludge with the aim of developing a high-performance material for the adsorption of gaseous trimethylamine. Effects of calcination temperature on physical and chemical properties of pellet-type adsorbents were investigated. The porous structure and surface characteristics of the adsorbents were studied using N{sub 2} adsorption and desorption isotherms, scanning electron microscope, X-ray diffraction, temperature-programmed desorption of ammonia, and infrared spectroscopy of adsorbed pyridine. The adsorbents obtained from the water treatment sludge are microporous materials with well-developed mesoporosity. The pellet-type adsorbent calcined at 500 .deg. C had the highest percentage of micropore volume and the smallest average pore diameter. The highest adsorption capacity in trimethylamine removal attained over the pellet-type adsorbent calcined at 500 .deg. C can be attributed to the highest number of acid sites as well as the well-developed microporosity.

Theoretical Insight of Physical Adsorption for a Single Component Adsorbent + Adsorbate System: II. The Henry Region

KAUST Repository

Chakraborty, Anutosh

2009-07-07

The Henry coefficients of a single component adsorbent + adsorbate system are calculated from experimentally measured adsorption isotherm data, from which the heat of adsorption at zero coverage is evaluated. The first part of the papers relates to the development of thermodynamic property surfaces for a single-component adsorbent + adsorbate system1 (Chakraborty, A.; Saha, B. B.; Ng, K. C.; Koyama, S.; Srinivasan, K. Langmuir 2009, 25, 2204). A thermodynamic framework is presented to capture the relationship between the specific surface area (Ai) and the energy factor, and the surface structural and the surface energy heterogeneity distribution factors are analyzed. Using the outlined approach, the maximum possible amount of adsorbate uptake has been evaluated and compared with experimental data. It is found that the adsorbents with higher specific surface areas tend to possess lower heat of adsorption (ΔH°) at the Henry regime. In this paper, we have established the definitive relation between Ai and ΔH° for (i) carbonaceous materials, metal organic frameworks (MOFs), carbon nanotubes, zeolites + hydrogen, and (ii) activated carbons + methane systems. The proposed theoretical framework of At and AH0 provides valuable guides for researchers in developing advanced porous adsorbents for methane and hydrogen uptake. © 2009 American Chemical Society.

Mixed-Penetrant Sorption in Ultrathin Films of Polymer of Intrinsic Microporosity PIM-1.

Science.gov (United States)

Ogieglo, Wojciech; Furchner, Andreas; Ghanem, Bader; Ma, Xiaohua; Pinnau, Ingo; Wessling, Matthias

2017-11-02

Mixed-penetrant sorption into ultrathin films of a superglassy polymer of intrinsic microporosity (PIM-1) was studied for the first time by using interference-enhanced in situ spectroscopic ellipsometry. PIM-1 swelling and the concurrent changes in its refractive index were determined in ultrathin (12-14 nm) films exposed to pure and mixed penetrants. The penetrants included water, n-hexane, and ethanol and were chosen on the basis of their significantly different penetrant-penetrant and penetrant-polymer affinities. This allowed studying microporous polymer responses at diverse ternary compositions and revealed effects such as competition for the sorption sites (for water/n-hexane or ethanol/n-hexane) or enhancement in sorption of typically weakly sorbing water in the presence of more highly sorbing ethanol. The results reveal details of the mutual sorption effects which often complicate comprehension of glassy polymers' behavior in applications such as high-performance membranes, adsorbents, or catalysts. Mixed-penetrant effects are typically very challenging to study directly, and their understanding is necessary owing to a broadly recognized inadequacy of simple extrapolations from measurements in a pure component environment.

Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India)

2013-07-01

Highlights: • Growth of p-type semiconducting SnO thin films by rf sputtering. • Varying the type of charge carriers with oxygen partial pressure. • Atomic percentage of SnO{sub x} thin films from the XPS analysis. • Demonstration of transparent p–n hetero junctions fabricated in the structure glass/ITO/n-ZnO/p-SnO. -- Abstract: p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO{sub 2} respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm{sup −1} and the other at 211 cm{sup −1}. Band gap of as-deposited SnO{sub x} thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO{sub 2}. p-Type conductivity of SnO thin films and n-type conductivity of SnO{sub 2} thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

Science.gov (United States)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Observation of reduced phase transition temperature in N-doped thermochromic film of monoclinic VO_2

International Nuclear Information System (INIS)

Wan, Meinan; Xiong, Mo; Li, Neng; Liu, Baoshun; Wang, Shuo; Ching, Wai-Yim; Zhao, Xiujian

2017-01-01

Highlights: • N-doped VO_2(M1) thin films have been synthesized by annealing in NH_3 atmosphere. • The phase purity, microstructure and optical property of VO_2 thin film can be regulated by NH_3 concentration. • First-principles calculations have been carried out to study the mechanism of N-doping on energy band structures of VO_2(M1). • The energy band gaps of VO_2(M1) are tuned by substitution N-doping or interstitial N-doping. - Abstract: Research on monoclinic (M1) phase of VO_2 has attracted a great of interest for smart coating applications due to its exceptional thermochromic property. Herein, we report the results using a novel approach to synthesize N-doped VO_2(M1) thin films with high purity by heat treatment in NH_3 atmosphere. The N dopant in the film can be regulated by varying NH_3 concentration during the annealing process. We find that the N atoms are located at the interstitial sites or substitute oxygen atoms, and the V-N bonds in the VO_2 thin films increase with NH_3 concentration. The metal to insulator transition (MIT) temperature (τ_c_,_h) of the VO_2 thin film is effectively reduced from 80.0 to 62.9 °C, while the solar modulation efficiency (ΔT_s_o_l) and the modulation efficiency at 2000 nm (ΔT_2_0_0_0_n_m) are 7.36% and 55.6% respectively. The band gap of N-doped VO_2 thin films related to MIT (E_g_1) is estimated to be as low as 0.18–0.25 eV whereas the band gap associated with the visible transparency (E_g_2) is about 1.50–1.58 eV. Based on the highly accurate first-principles calculations, the E_g_1 of VO_2 (M1) is reduced after substituted or interstitial N-doping, while the E_g_2 alters with the mode of N-doping, which is excellent agreement with experimental measurement.

n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

Science.gov (United States)

Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

2018-03-01

We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

New type of amidoxime-group-containing adsorbent for the recovery of uranium from seawater. III. Recycle use of adsorbent

International Nuclear Information System (INIS)

Omichi, H.; Katakai, A.; Sugo, T.; Okamoto, J.

1986-01-01

An amidoxime-group adsorbent for recovering uranium from seawater was made by radiation-induced graft polymerization of acrylonitrile onto polymeric fiber, followed by amidoximation. Uranium adsorption of the adsorbent contacted with seawater in a column increased with the increase in flow rate, then leveled off. The relationship between uranium adsorption in a batch process and the ratio of the amount of seawater to that of adsorbent was found to be effective in evaluating adsorbent contacted with any amount of seawater. The conditioning of the adsorbent with an alkaline solution at higher temperature (∼80 0 C) after the acid desorption recovered the adsorption ability to the original level. This made it possible to apply the adsorbent to recycle use. On the other hand, the adsorbent conditioned at room temperature or that without conditioning lost adsorption ability during recycle use. The increase in water uptake was observed as one of the physical changes produced during recycle use of the alkaline-conditioned adsorbent, while the decrease in water uptake was observed with the unconditioned adsorbent. The IR spectra of the adsorbent showed a probability of reactions of amidoxime groups with acid and alkaline solutions, which can explain the change in uranium adsorption during the adsorption-desorption cycle

Surface-enhanced raman spectroscopy of quinomethionate adsorbed on silver colloids

International Nuclear Information System (INIS)

Kim, Mak Soon; Kang, Jae Soo; Park, Si Bum; Lee, Mu Sang

2003-01-01

We have studied the surface-enhanced Raman spectroscopy (SERS) spectrum of quinomethionate (6-methyl-1,3-dithiolo(4,5-b)quinoxalin-2-one), which is an insecticide or fungicide used on vegetables and wheat. We observed no signals in the ordinary Raman spectra of solid-state quinomethionate, but when it was adsorbed on a colloidal silver surface, strong vibrational signals were obtained at a very low concentration. The SERS spectra were obtained by silver colloids prepared by the Creighton et al. method. The influence of pH and the aggregation inductors (Cl - , Br - , I - , F - ) on the adsorption mechanism was investigated. Two different adsorption mechanisms were deduced, depending on the experimental conditions: The one N atom or two N atoms are chemisorbed on an Ag surface. An important contribution of the chemical mechanism was inferred when the one N atom was perpendicularly adsorbed on a surface. It is possible that quinomethionate can be detected to about 10 -5 M

Orientation and magnetic properties of the thick multilayered [NdFeBxTby]n films

International Nuclear Information System (INIS)

Liu, Weifang; Suzuki, Shunji; Machida, Kenichi

2007-01-01

Multilayered [NdFeB x /Tb y ] n films were prepared by a three-demensional sputtering system. From the thickness of NdFeB layer dependence on the orientation and magnetic properties of multilayered [NdFeB (xμm)/Tb (50nm)] n films with 7.2μm as a total thickness of NdFeB layers, it was found that the orientation of NdFeB grains was maintained. However, the coercivity was enhanced with decreasing the thickness of each NdFeB thin layer. The (BH) max value of 240kJ/m 3 was obtained on the layered [NdFeB (1.2μm)/Tb (50 nm)] 6 film as an optimal value. For the multilayered [NdFeB (1.2μm)/Tb (50 nm)] n films with various multiple layer sets (n), the coercivity value increased with the film thickness without any deterioration of the c-axis texture and consequently, multilayered NdFeB/Tb film magnets with total thickness values around 70μm showed the superior magnetic properties (H cj approx. = 1360kA/m, I r approx.= 1.05T, and (BH) max approx.= 202kJ/m 3 ). (author)

AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

International Nuclear Information System (INIS)

Wang, W B; Xuan, W P; Chen, J K; Wang, X Z; Luo, J K; Fu, Y Q; Chen, J J; Duan, P F; Mayrhofer, P; Bittner, A; Schmid, U

2016-01-01

This paper reports the characterization of scandium aluminum nitride (Al 1−xS c xN , x   =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients ( K 2 , ∼2%) compared with pure AlN films (<0.5%). The performance of the two types of devices was also investigated and compared, using acoustofluidics as an example. The AlScN/Si SAW devices achieved much lower threshold powers for the acoustic streaming and pumping of liquid droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices. (paper)

Ultra-Thin Optically Transparent Carbon Electrodes Produced from Layers of Adsorbed Proteins

Science.gov (United States)

Alharthi, Sarah A.; Benavidez, Tomas E.; Garcia, Carlos D.

2013-01-01

This work describes a simple, versatile, and inexpensive procedure to prepare optically transparent carbon electrodes, using proteins as precursors. Upon adsorption, the protein-coated substrates were pyrolyzed under reductive conditions (5% H2) to form ultra-thin, conductive electrodes. Because proteins spontaneously adsorb to interfaces forming uniform layers, the proposed method does not require a precise control of the preparation conditions, specialized instrumentation, or expensive precursors. The resulting electrodes were characterized by a combination of electrochemical, optical, and spectroscopic means. As a proof-of-concept, the optically-transparent electrodes were also used as substrate for the development of an electrochemical glucose biosensor. The proposed films represent a convenient alternative to more sophisticated, and less available, carbon-based nanomaterials. Furthermore, these films could be formed on a variety of substrates, without classical limitations of size or shape. PMID:23421732

Kinetics of the formation of the titanium nitruro film (TiN)

International Nuclear Information System (INIS)

Rojas Andres; Devia C, Alfonso; Alzate Rafael

1999-01-01

They are presented in succinct form the factors that intervene in the growth, adhesion of the film and election of the support material in the process of formation of TiN film. Equally it's carried out the kinetic development of the possible reactions (ionization and excitement) involved in the process

A study of structure and properties of molecularly thin methanol film using the modified surface forces apparatus.

Science.gov (United States)

Zhao, Gutian; Cai, Di; Wu, Gensheng; Tan, Qiyan; Xiang, Li; Zhang, Yin; Xiang, Nan

2014-11-01

A novel approach for studying the adsorption and evaporation processes of molecularly thin methanol film by the modified surface forces apparatus (M-SFA) is reported. This method can be used precisely to measure the thickness, morphology, and mechanical properties of the film confined between two mica surfaces in a real-time manner at gas atmosphere. By observing the adsorption and evaporation processes of the methanol molecule, it is found that the first adsorbed layer of the methanol film on the mica surface behaves as a solid-like structure. The thickness of this layer is measured to be about 3.2 Å, approximately equal to the diameter of a methanol molecule. Besides, this first adsorbed layer can carry normalized loads of more than 5.6 atm due to the carrying capacity conserved by the bond of mica-OH. The outer layers of the methanol film are further adsorbed with the increase of the exposure time, which are liquid-like and can be easily eliminated out from the substrate. The present study suggests that the interacting mode between hydroxy and mica is of great potential in material science and biomedical systems. © 2014 Wiley Periodicals, Inc.

Atomic-layer chemical-vapor-deposition of TiN thin films on Si(100) and Si(111)

CERN Document Server

Kim, Y S; Kim, Y D; Kim, W M

2000-01-01

An atomic-layer chemical vapor deposition (AL-CVD) system was used to deposit TiN thin films on Si(100) and Si(111) substrates by cyclic exposures of TiCl sub 4 and NH sub 3. The growth rate was measured by using the number of deposition cycles, and the physical properties were compared with those of TiN films grown by using conventional deposition methods. To investigate the growth mechanism, we suggest a growth model for TiN n order to calculate the growth rate per cycle with a Cerius program. The results of the calculation with the model were compared with the experimental values for the TiN film deposited using the AL-CVD method. The stoichiometry of the TiN film was examined by using Auger electron spectroscopy, and the chlorine and the oxygen impurities were examined. The x-ray diffraction and the transmission electron microscopy results for the TiN film exhibited a strong (200) peak and a randomly oriented columnar microstructure. The electrical resistivity was found to decrease with increasing deposit...

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

CERN Document Server

Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

2002-01-01

AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy

International Nuclear Information System (INIS)

Yu, Fengmei; Liu, Yajing; Yang, Mei; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

2013-01-01

η-phase manganese nitride films have been grown on LaAlO 3 (100) and LaSrAlO 4 (001) substrates by using plasma-assisted molecular beam epitaxy. On the basis of reflective high energy electron diffraction, X-ray diffraction, and X-ray photoemission spectroscopy, it is confirmed that two types of η-Mn 3 N 2 with different lattice constants coexist in the films due to the lattice mismatches between the Mn 3 N 2 films and the substrates. Magnetic properties of the films were characterized by a superconducting quantum interference device magnetometer at room temperature. The Mn 3 N 2 films on LaAlO 3 substrate were found to have room-temperature ferromagnetism. Two potential interaction mechanisms are proposed regarding the origin of the observed ferromagnetism. - Highlights: ► The films of two types of η-Mn 3 N 2 have been grown by molecular beam epitaxy. ► Mn 3 N 2 A and Mn 3 N 2 B coexisted in the films on LaAlO 3 and LaSrAlO 4 . ► The room-temperature ferromagnetism of the Mn 3 N 2 films on LaAlO 3 was obtained

Magnetic properties and high frequency characteristics of FeCoN thin films

Directory of Open Access Journals (Sweden)

Tae-Jong Hwang

2016-05-01

Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

Electronic spectral properties of surfaces and adsorbates and atom-adsorbate van der Waals interactions

International Nuclear Information System (INIS)

Lovric, D.; Gumhalter, B.

1988-01-01

The relevance of van der Waals interactions in the scattering of neutral atoms from adsorbates has been recently confirmed by highly sensitive molecular-beam techniques. The theoretical descriptions of the collision dynamics which followed the experimental studies have necessitated very careful qualitative and quantitative examinations and evaluations of the properties of atom-adsorbate van der Waals interactions for specific systems. In this work we present a microscopic calculation of the strengths and reference-plane positions for van der Waals potentials relevant for scattering of He atoms from CO adsorbed on various metallic substrates. In order to take into account the specificities of the polarization properties of real metals (noble and transition metals) and of chemisorbed CO, we first calculate the spectra of the electronic excitations characteristic of the respective electronic subsystems by using various data sources available and combine them with the existing theoretical models. The reliability of the calculated spectra is then verified in each particular case by universal sum rules which may be established for the electronic excitations of surfaces and adsorbates. The substrate and adsorbate polarization properties which derive from these calculations serve as input data for the evaluation of the strengths and reference-plane positions of van der Waals potentials whose computed values are tabulated for a number of real chemisorption systems. The implications of the obtained results are discussed in regard to the atom-adsorbate scattering cross sections pertinent to molecular-beam scattering experiments

Surface electrons of helium films

International Nuclear Information System (INIS)

Studart, N.; Hipolito, O.

1986-01-01

Theoretical calculations of some properties of two-dimensional electrons on a liquid helium film adsorbed on a solid substrate are reviewed. We describe the spectrum of electron bound states on bulk helium as well on helium films. The correlational properties, such as the structure factor and correlation energy, are determined as functions of the film thickness for different types of substrates in the framework of a Generalized Random-Phase Approximation. The collective excitations of this system are also described. The results for electrons on the surface of thin films and bulk helium are easily obtained. we examine the electron interaction with the excitations of the liquid helium surface resulting in a new polaron state, which was observed very recently. The ground state energy and the effective mass of this polaron are determined by using the path-integral formalism and unitary-transformation method. Recent speculations about the phase diagram of electrons on the helium film are also discussed. (Author) [pt

Synthesis of nanostructured multiphase Ti(C,N)/a-C films by a plasma focus device

International Nuclear Information System (INIS)

Ghareshabani, E.; Rawat, R.S.; Sobhanian, S.; Verma, R.; Karamat, S.; Pan, Z.Y.

2010-01-01

Nanostructured multiphase Ti(C,N)/a-C films were deposited using a 3.3 kJ pulsed plasma focus device onto silicon (1 0 0) substrates at room temperature. The plasma focus device, fitted with solid titanium anode instead of usual hollow copper anode, was operated with nitrogen and Ar/CH 4 as the filling gas. Films were deposited with different number of shots, at 80 mm from top of the anode and at zero angular position with respect to anode axis. X-ray diffraction results show the diffraction peaks related to different compounds such as TiC 2 , TiN, Ti 2 CN, Ti and TiC 0.62 confirming the deposition of multiphase titanium carbo-nitride composite films on silicon. X-ray photoelectron spectroscopy confirms the formation of Ti-C, C-N, Ti-N, Ti-O and C-C bonds in the films. Scanning electron microscopy reveals that the nanostructure grains are agglomerates of smaller nanoparticles about 10-20 nm in size. Raman studies verify the formation of multiphase Ti(C,N) and also of amorphous graphite in the films. The maximum microhardness value of the composite film is 14.8 ± 1.3 GPa for 30 shots.

Anti-corrosion film formed on HAl77-2 copper alloy surface by aliphatic polyamine in 3 wt.% NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Yu, Yinzhe; Yang, Dong; Zhang, Daquan, E-mail: zhdq@sh163.net; Wang, Yizhen; Gao, Lixin

2017-01-15

Highlights: • Properties of ADDD meet environment-friendly requirements. • ADDD’s inhibition efficiency is better than BTA at the low concentration. • ADDD adsorbs on the copper alloy surface by via the N atom in its amino group using flat mode. - Abstract: The corrosion inhibition of a polyamine compound, N-(4-amino-2, 3-dimethylbutyl)-2, 3-dimethylbutane-1, 4-diamine (ADDD), was investigated for HAl77-2 copper alloy in 3 wt.% NaCl solution. Electrochemical measurements, scanning electron microscopy (SEM), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FT-IR) techniques were employed for this research. The results show that ADDD strongly suppresses the corrosion of HAl77-2 alloy. The inhibition efficiency of ADDD is 98.6% at 0.5 mM, which is better than benzotriazole (BTAH) at the same concentration. Polarization curves indicate that ADDD is an anodic type inhibitor. Surface analysis suggests that a protective film is formed via the interaction of ADDD and copper. FT-IR reveals that the inhibition mechanism of ADDD is dominated by chemisorption onto the copper alloy surface to form an inhibition film. Furthermore, quantum chemical calculation and molecular dynamics (MD) simulations methods show that ADDD adsorbs on HAl77-2 surface via amino group in its molecule.

Structures, stability, magnetic moments and growth strategies of the Fe_nN (n = 1–7) clusters: All-electron density functional theory calculations

International Nuclear Information System (INIS)

Li, Zhi; Zhao, Zhen

2017-01-01

The geometries, electronic properties, magnetic moments and growth strategies of the Fe_nN (n = 1–7) clusters are investigated using all-electron density functional theory. The results show that N doping significantly distorts the Fe_n clusters. Fe_4N and Fe_6N clusters are more stable structures than other considered Fe_nN clusters. Local peaks of HOMO-LUMO gap curve are found at n = 3, 7, implying that the chemical stability of the Fe_3N and Fe_7N clusters is higher. Fe_2N, Fe_4N and Fe_6N clusters have larger magnetic moments compared to other considered Fe_nN (n = 1–7) clusters. It can be seen that the Fe_5 clusters are easier to adsorb a Fe atom while the Fe_4 clusters are easier to adsorb a N atom. The considered Fe_mN clusters prefer to adsorb a Fe atom and larger Fe_mN clusters are easier to grow. - Highlights: • The structural stability of the Fe_4N and Fe_6N clusters is higher. • The chemical stability of the Fe_3N and Fe_7N clusters is higher. • Fe_5 clusters are easier to adsorb a Fe atom while Fe_4 clusters are easier to adsorb a N atom. • Fe_nN clusters prefer to adsorb a Fe atom.

Krypton retention on solid adsorbents

International Nuclear Information System (INIS)

Monson, P.R. Jr.

1980-01-01

Radioactive krypton-85 is released to the atmosphere in the off-gas from nuclear reprocessing plants. Three main methods have been suggested for removal of krypton from off-gas streams: cryogenic distillation; fluorocarbon absorption; and adsorption on solid sorbents. Use of solid adsorbents is the least developed of these methods, but offers the potential advantages of enhanced safety and lower operating costs. An experimental laboratory program was developed that will be used to investigate systematically many solid adsorbents (such as zeolites, i.e., mordenites) for trapping krypton in air. The objective of this investigation is to find an adsorbent that is more economical than silver-exchanged mordenite. Various physical and chemical characteristics such as adsorption isotherms, decontamination factors, co-adsorption, regeneration, and the mechanism and kinetics of noble gas adsorption were used to characterize the adsorbents. In the experimental program, a gas chromatograph using a helium ionization detector was used to measure the krypton in air before and after the adsorbent bed. This method can determine directly decontamination factors greater than 100

Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

International Nuclear Information System (INIS)

Cheah, S.F.; Lee, S.C.; Ng, S.S.; Yam, F.K.; Abu Hassan, H.; Hassan, Z.

2015-01-01

Porous gallium nitride (GaN) thin films with different surface morphologies and free carriers properties were fabricated from Si-doped GaN thin films using ultra-violet assisted electrochemical etching approach under various etching voltages. Fluctuation of luminescence signals was observed in the photoluminescence spectra of porous GaN thin films. Taking advantage of the spectral sensitivity of infrared attenuated total reflection spectroscopy on semiconductor materials, roles of free carriers and porous structure in controlling luminescence properties of GaN were investigated thoroughly. The results revealed that enhancement in luminescence signal is not always attained upon porosification. Although porosification is correlated to the luminescence enhancement, however, free carrier is the primary factor to enhance luminescence intensity. Due to unavoidable significant reduction of free carriers from Si-doped GaN in the porosification process, control of etching depth (i.e., thickness of porous layer formed from the Si-doped layer) is critical in fabricating porous GaN thin film with enhanced luminescence response. - Highlights: • Various pore morphologies with free carrier properties are produced by Si-doped GaN. • Free carriers are important to control the luminescence signal of porous GaN. • Enhancement of luminescence signal relies on the pore depth of Si-doped layer

Synthesis of magnetic ordered mesoporous carbon (Fe-OMC) adsorbent and its evaluation for fuel desulfurization

Science.gov (United States)

Farzin Nejad, N.; Shams, E.; Amini, M. K.

2015-09-01

In this work, magnetic ordered mesoporous carbon adsorbent was synthesized using soft templating method to adsorb sulfur from model oil (dibenzothiophene in n-hexane). Through this research, pluronic F-127, resorcinol-formaldehyde and hydrated iron nitrate were respectively used as soft template, carbon source and iron source. The adsorbent was characterized by X-ray diffraction, nitrogen adsorption-desorption isotherm and transmission electron microscopy. Nitrogen adsorption-desorption measurement revealed the high surface area (810 m2 g-1), maxima pore size of 3.3 nm and large pore volume (1.01 cm3 g-1) of the synthesized sample. The adsorbent showed a maximum adsorption capacity of 111 mg dibenzothiophene g-1 of adsorbent. Sorption process was described by the pseudo-second-order rate equation and could be better fitted by the Freundlich model, showing the heterogeneous feature of the adsorption process. In addition, the adsorption capacity of regenerated adsorbent was 78.6% of the initial level, after five regeneration cycles.

Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

Science.gov (United States)

Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

2015-01-01

Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

Preparation of n-type semiconductor SnO2 thin films

International Nuclear Information System (INIS)

Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

2013-01-01

We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

KAUST Repository

Wei, Binbin

2018-04-09

Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

KAUST Repository

Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Qi, Zhengbing; Shen, Hao; Wang, Zhoucheng

2018-01-01

Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Energy Technology Data Exchange (ETDEWEB)

Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

Cell for studying electron-adsorbed gas interactions; Cellule d'etudes des interactions electron-gaz adsorbe

Energy Technology Data Exchange (ETDEWEB)

Golowacz, H; Degras, D A [Commissariat a l' Energie Atomique, 91 - Saclay (France). Centre d' Etudes Nucleaires, Deptartement de Physique des Plasmas et de la Fusion Controlee, Service de Physique Appliquee, Service de Physique des Interractions Electroniques, Section d' Etude des Interactions Gaz-Solides

1967-07-01

The geometry and the technology of a cell used for investigations on electron-adsorbed gas interactions are described. The resonance frequencies of the surface ions which are created by the electron impact on the adsorbed gas are predicted by simplified calculations. The experimental data relative to carbon monoxide and neon are in good agreement with these predictions. (authors) [French] Les caracteristiques geometriques et technologiques generales d'une cellule d'etude des interactions entre un faisceau d'electrons et un gaz adsorbe sont donnees. Un calcul simplifie permet de prevoir les frequences de resonance des ions de surface crees par l'impact des electrons sur le gaz adsorbe. Les donnees experimentales sur l'oxyde de carbone et le neon confirment les previsions du calcul. (auteurs)

Photochemical oxygen reduction by zinc phthalocyanine and silver/gold nanoparticle incorporated silica thin films

Energy Technology Data Exchange (ETDEWEB)

Pal, Manas; Ganesan, Vellaichamy, E-mail: velganesh@yahoo.com; Azad, Uday Pratap

2012-12-15

Silver or gold nanoparticles are synthesized using a borohydride reduction method and are anchored simultaneously into/onto the mercaptopropyl functionalized silica. Later, zinc phthalocyanine is adsorbed onto the above materials. Thin films of these materials are prepared by coating an aqueous colloidal suspension of the respective material onto glass plates. Visible light irradiation of these films in oxygen saturated, stirred aqueous solutions effectively reduces oxygen to hydrogen peroxide. The photocatalytic reduction of oxygen is explained on the basis of the semiconducting properties of the silica films. The back electron transfer reaction is largely prevented by means of a sacrificial electron donor, triethanolamine. - Highlights: Black-Right-Pointing-Pointer Zinc phthalocyanine adsorbed silica materials were prepared. Black-Right-Pointing-Pointer Thin films of these materials photocatalytically reduce oxygen. Black-Right-Pointing-Pointer The photocatalysis is explained based on semiconductor properties of the materials. Black-Right-Pointing-Pointer Metal nanoparticles increase the photocatalytic efficiency of the materials.

Chemical state and phase structure of (TaNbTiW)N films prepared by combined magnetron sputtering and PBII

Energy Technology Data Exchange (ETDEWEB)

Feng, Xingguo [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tang, Guangze [National Key Laboratory of Materials Behavior and Evaluation in Space Environment, Harbin Institute of Technology, Harbin 150001 (China); Sun, Mingren [National Key Laboratory of Science and Technology on Precision Hot Processing of Metals Harbin Institute of Technology, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, 150001 (China)

2013-09-01

(TaNbTiW)N films with thickness of ∼1000 nm are prepared on titanium alloy substrate by combined magnetron sputtering deposition and nitrogen plasma based ion implantation (N-PBII). Chemical state of the elements and phase structure of the films are investigated using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), respectively. The bonds of Ta-N, Nb-N, Ti-N-O and Ta-O are detected in the (TaNbTiW)N films, however both W-N and W-O are not found. The initial alloy film has a BCC structure, while the films with N-PBII treatment are composed of BCC and FCC structures. The hardness and elastic modulus of the films can be improved by increasing nitrogen implantation dose and reach maximum values of 9.0 GPa and 154.1 GPa, respectively.

Electrochemical and spectroelectrochemical characterization of different mesoporous TiO2 film electrodes for the immobilization of Cytochrome c

Science.gov (United States)

Katsiaounis, Stavros; Tiflidis, Christina; Tsekoura, Christina; Topoglidis, Emmanuel

2018-03-01

In this work three different mesoporous TiO2 film electrodes were prepared and used for the immobilization of Cytochrome c (Cyt-c). Films prepared via a standard sol-gel route (SG-films) were compared with commercially available benchmark nanotitania materials, namely P25 Degussa (P25-films) and Dyesol nanopaste (Dyesol films). Their properties, film deposition characteristics and their abilities to adsorb protein molecules in a stable and functional way were examined. We investigated whether it is possible, rather than preparing TiO2 films using multistep, lengthy and not always reproducible sol-gel procedures, to use commercially available nanotitania materials and produce reproducible films faster that exhibit all the properties that make TiO2 films ideal for protein immobilization. Although these materials are formulated primarily for dye-sensitized solar cell applications, in this study we found out that protein immobilization is facile and remarkably stable on all of them. We also investigated their electrochemical properties by using cyclic voltammetry and spectroelectrochemistry and found out that not only direct reduction of Fe(III)-heme to Fe(II)-heme of immobilized Cyt-c was possible on all films but that the adsorbed protein remained electroactive.

Mixed-Penetrant Sorption in Ultra-Thin Films of Polymer of Intrinsic Microporosity PIM-1

KAUST Repository

Ogieglo, Wojciech; Furchner, Andreas; Ghanem, Bader; Ma, Xiao-Hua; Pinnau, Ingo; Wessling, Matthias

2017-01-01

Mixed penetrant sorption into ultra-thin films of a super-glassy polymer of intrinsic microporosity (PIM-1) was studied for the first time by using interference-enhanced in-situ spectroscopic ellipsometry. PIM-1 swelling and the concurrent changes in its refractive index were determined in ultra-thin (12 - 14 nm) films exposed to pure and mixed penetrants. The penetrants included water, n-hexane and ethanol and were chosen based on their significantly different penetrant-penetrant and penetrant-polymer affinities. This allowed studying microporous polymer responses at diverse ternary compositions and revealed effects such as competition for the sorption sites (for water / n-hexane or ethanol / n-hexane) or enhancement in sorption of typically weakly sorbing water in the presence of more highly sorbing ethanol. The results reveal details of the mutual sorption effects which often complicate comprehension of glassy polymers' behavior in applications such as high-performance membranes, adsorbents or catalysts. Mixed-penetrant effects are typically very challenging to study directly and their understanding is necessary owing to a broadly recognized inadequacy of simple extrapolations from measurements in pure component environment.

Mixed-Penetrant Sorption in Ultra-Thin Films of Polymer of Intrinsic Microporosity PIM-1

KAUST Repository

Ogieglo, Wojciech

2017-10-12

Mixed penetrant sorption into ultra-thin films of a super-glassy polymer of intrinsic microporosity (PIM-1) was studied for the first time by using interference-enhanced in-situ spectroscopic ellipsometry. PIM-1 swelling and the concurrent changes in its refractive index were determined in ultra-thin (12 - 14 nm) films exposed to pure and mixed penetrants. The penetrants included water, n-hexane and ethanol and were chosen based on their significantly different penetrant-penetrant and penetrant-polymer affinities. This allowed studying microporous polymer responses at diverse ternary compositions and revealed effects such as competition for the sorption sites (for water / n-hexane or ethanol / n-hexane) or enhancement in sorption of typically weakly sorbing water in the presence of more highly sorbing ethanol. The results reveal details of the mutual sorption effects which often complicate comprehension of glassy polymers\\' behavior in applications such as high-performance membranes, adsorbents or catalysts. Mixed-penetrant effects are typically very challenging to study directly and their understanding is necessary owing to a broadly recognized inadequacy of simple extrapolations from measurements in pure component environment.

Thermal stability of ultrasoft Fe-Zr-N films

NARCIS (Netherlands)

Chechenin, NG; van Veen, A; Schut, H; Chezan, AR; Boerma, D; Vystavel, T; De Hosson, JTM

2003-01-01

The thermal stability of nanocrystalline ultrasoft magnetic (Fe98Zr2)(1-x)N-x films with x = 0.10-0.25 was studied using thermal desorption spectrometry, positron beam analysis and high resolution transmission electron microscopy. The results demonstrate that grain growth during the heat treatment

Bioavailability of Carbon Nanomaterial-Adsorbed Polycyclic Aromatic Hydrocarbons to Pimphales promelas: Influence of Adsorbate Molecular Size and Configuration.

Science.gov (United States)

Linard, Erica N; Apul, Onur G; Karanfil, Tanju; van den Hurk, Peter; Klaine, Stephen J

2017-08-15

Despite carbon nanomaterials' (CNMs) potential to alter the bioavailability of adsorbed contaminants, information characterizing the relationship between adsorption behavior and bioavailability of CNM-adsorbed contaminants is still limited. To investigate the influence of CNM morphology and organic contaminant (OC) physicochemical properties on this relationship, adsorption isotherms were generated for a suite of polycyclic aromatic hydrocarbons (PAHs) on multiwalled carbon nanotubes (MWCNTs) and exfoliated graphene (GN) in conjunction with determining the bioavailability of the adsorbed PAHs to Pimphales promelas using bile analysis via fluorescence spectroscopy. Although it appeared that GN adsorbed PAHs indiscriminately compared to MWCNTs, the subsequent bioavailability of GN-adsorbed PAHs was more sensitive to PAH morphology than MWCNTs. GN was effective at reducing bioavailability of linear PAHs by ∼70%, but had little impact on angular PAHs. MWCNTs were sensitive to molecular size, where bioavailability of two-ringed naphthalene was reduced by ∼80%, while bioavailability of the larger PAHs was reduced by less than 50%. Furthermore, the reduction in bioavailability of CNM-adsorbed PAHs was negatively correlated with the amount of CNM surface area covered by the adsorbed-PAHs. This study shows that the variability in bioavailability of CNM-adsorbed PAHs is largely driven by PAH size, configuration and surface area coverage.

Educación en cine: memoria y patrimonio Film Education: Memory and Heritage

Directory of Open Access Journals (Sweden)

Michel Clarembeaux

2010-10-01

Full Text Available La educación para el cine en la era digital debería apoyarse en tres polos complementarios y estrechamente asociados: ver, analizar y hacer películas con jóvenes. Estos tres polos han de potenciarse mutuamente. El concepto de análisis creativo podría ser la argamasa que diera coherencia y eficiencia al dispositivo educativo. Si el cine es un arte, es sobre todo el arte de la memoria, tanto colectiva como individual. Este artículo sugiere que es posible hacer converger la pedagogía de la educación cinematográfica y la voluntad ciudadana de perpetuar la memoria, al tiempo que se protege el patrimonio cultural. El autor propone una serie de películas para ilustrar estos planteamientos, que ponen de relieve la dimensión económica y cultural de los medios de comunicación, respondiendo en esta convergencia a las más recientes directrices de la Unión Europea sobre creación y producción, desde esta perspectiva, de medios audiovisuales. El trabajo se inicia con una aproximación a la educación para el cine en la era digital. Posteriormente se recogen algunas singularidades de las «películas de la memoria», aludiendo concretamente a la tipología de los puntos de vista de los realizadores y al tratamiento de sus fuentes. Por último, se refleja el encuentro entre el concepto de «análisis creativo», fomentado por la educación cinematográfica, y la realización de videogramas hechos por jóvenes y dedicados a la memoria individual o colectiva.Film education in the digital age should be based on three closely-related and complementary fundamentals: to see, to analyze and to make films with young people; three basics that must interact and support each other. The concept of creative analysis could be the glue the binds this subject together, making it coherent and efficient for educational purposes. If cinema is an art, it is above all the art of memory, both individual and collective. This article suggests that we can join the

Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistors

International Nuclear Information System (INIS)

Kang, S.M.; Yoon, S.G.; Suh, S.J.; Yoon, D.H.

2008-01-01

Tantalum nitride thin films were deposited by radio frequency (RF) reactive sputtering at various N 2 /Ar gas flow ratios and working pressures to examine the change of their electrical resistivity. From the X-ray diffraction (XRD) and four-point probe sheet resistance measurements of the TaN x films, it was found that the change of the crystalline structures of the TaN x films as a function of the N 2 partial pressure caused an abrupt change of the electrical resistivity. When the hexagonal structure TaN thin films changed to an f.c.c. structure, the sheet resistance increased from 16 Ω/sq to 1396 Ω/sq. However, we were able to control the electrical resistivity of the TaN thin film in the range from 69 Ω/sq to 875 Ω/sq, with no change in crystalline structure, within a certain range of working pressures. The size of the grains in the scanning electron microscopy (SEM) images seemed to decrease with the increase of working pressure

Growth of AlN films and their characterization

Energy Technology Data Exchange (ETDEWEB)

Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

2006-06-15

Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Organic adsorbates on metal surfaces. PTCDA and NTCDA on AG(110)

Energy Technology Data Exchange (ETDEWEB)

Abbasi, Afshin

2010-02-22

Polyaromatic molecules functionalized with carboxylic groups have served as model systems for the growth of organic semiconducting films on a large variety of substrates. Most non-reactive substrates allow for a growth mode compatible with the bulk phase of the molecular crystal with two molecules in the unit cell, but some more reactive substrates including Ag(111) and Ag(110) can induce substantial changes in the first monolayer (ML). In the specific case of Ag(110), the adsorbate unit cell of both NTCDA and PTCDA resembles a brickwall structure, with a single molecule in the unit cell. From this finding, it can be concluded that the adsorbate-substrate interaction is stronger than typical inter-molecular binding energies in the respective bulk phases. In the present work, the interactions between small Ag(110) clusters and a single NTCDA or PTCDA molecule are investigated with different ab initio techniques. Four major ingredients contribute to the binding between adsorbate and substrate: Directional bonds between Ag atoms in the topmost layer and the oxygen atoms of the molecule, Pauli repulsion between filled orbitals of molecule and substrate, an attractive van-der-Waals interaction, and a negative net charge on the molecule inducing positive image charges in the substrate, resulting therefore in an attractive Coulomb interaction between these opposite charges. As both Hartree-Fock theory and density functional theory with typical gradient-corrected density functional do not contain any long range correlation energy required for dispersion interactions, we compare these approaches with the fastest numerical technique where the leading term of the van-der-Waals interaction is included, i.e. second order Moeller-Plesset theory (MP2). Both Hartree-Fock and density functional theory result in bended optimized geometries where the adsorbate is interacting mainly via the oxygen atoms, with the core of the molecule repelled from the substrate. Only at the MP2 level

Bilirubin adsorption on nanocrystalline titania films

International Nuclear Information System (INIS)

Yang Zhengpeng; Si Shihui; Fung Yingsing

2007-01-01

Bilirubin produced from hemoglobin metabolism and normally conjugated with albumin is a kind of lipophilic endotoxin, and can cause various diseases when its concentration is high. Bilirubin adsorption on the nanocrystalline TiO 2 films was investigated using quartz crystal microbalance, UV-vis and IR techniques, and factors affecting its adsorption such as pH, bilirubin concentration, solution ionic strength, temperature and thickness of TiO 2 films were discussed. The amount of adsorption and parameters for the adsorption kinetics were estimated from the frequency measurements of quartz crystal microbalance. A fresh surface of the nanocrystalline TiO 2 films could be photochemically regenerated because holes and hydroxyl radicals were generated by irradiating the nanocrystalline TiO 2 films with UV light, which could oxidize and decompose organic materials, and the nanocrystalline TiO 2 films can be easily regenerated when it is used as adsorbent for the removal of bilirubin

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

2011-01-01

A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

Organic and Inorganic Dyes in Polyelectrolyte Multilayer Films

Science.gov (United States)

Ball, Vincent

2012-01-01

Polyelectrolyte multilayer films are a versatile functionalization method of surfaces and rely on the alternated adsorption of oppositely charged species. Among such species, charged dyes can also be alternated with oppositely charged polymers, which is challenging from a fundamental point of view, because polyelectrolytes require a minimal number of charges, whereas even monovalent dyes can be incorporated during the alternated adsorption process. We will not only focus on organic dyes but also on their inorganic counterparts and on metal complexes. Such films offer plenty of possible applications in dye sensitized solar cells. In addition, dyes are massively used in the textile industry and in histology to stain textile fibers or tissues. However, the excess of non bound dyes poses serious environmental problems. It is hence of the highest interest to design materials able to adsorb such dyes in an almost irreversible manner. Polyelectrolyte multilayer films, owing to their ion exchange behavior can be useful for such a task allowing for impressive overconcentration of dyes with respect to the dye in solution. The actual state of knowledge of the interactions between charged dyes and adsorbed polyelectrolytes is the focus of this review article.

Characterization of adsorption uptake curves for both intraparticle diffusion and liquid film mass transfer controlling systems

International Nuclear Information System (INIS)

Sonetaka, Noriyoshi; Fan, Huan-Jung; Kobayashi, Seiji; Su, Yang-Chih; Furuya, Eiji

2009-01-01

In general, the adsorption uptake curve (AUC) can be easily determined in either intraparticle diffusion or liquid film mass transfer dominating systems. However, for both intraparticle diffusion and liquid film mass transfer controlling systems, the characterization of AUC is much more complicated, for example, when relatively small adsorbent particles are employed. In addition, there is no analytical solution available for both intraparticle diffusion and liquid film mass transfer controlling systems. Therefore, this paper is trying to characterize AUC for both intraparticle diffusion and liquid film mass transfer controlling adsorption systems using the shallow bed reactor technique. Typical parameters influencing AUC include liquid film mass transfer coefficient (k F ), effective intraparticle diffusivity (D S ), influent concentration (c 0 ) and equilibrium parameters (such as Freundlich isotherm constants k and 1/n). These parameters were investigated in this research and the simulated results indicated that the ratio of k F /D S and Freundlich constant 1/n had impact on AUC. Biot number (Bi) was used to replace the ratio of k F /D S in this study. Bi represents the ratio of the rate of transport across the liquid layer to the rate of intraparticle diffusion. Furthermore, Bi is much more significant than that of 1/n for AUC. Therefore, AUC can be characterized by Bi. In addition, the obtained Bi could be used to determine D S and k F simultaneously. Both parameters (D S and k F ) are important for designing and operating fixed bed reactors.

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Science.gov (United States)

Lund, Cory; Hestroffer, Karine; Hatui, Nirupam; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-11-01

Smooth relaxed N-polar InGaN films were grown by metal-organic CVD (MOCVD) on N-polar InGaN pseudosubstrates (PSs) using a novel digital approach consisting of a constant In precursor flow with the pulsed injection of H2 carrier gas. InGaN layers grown on PSs exhibited an In composition of about 50% higher than those of the layers grown on N-polar GaN templates, assuming the in-plane lattice constant of the relaxed PSs, corresponding to In0.11Ga0.89N. Additionally, the luminescence recorded from InGaN layers grown on PSs at 490 nm was twice as intense as that obtained from the layers deposited on coloaded GaN-on-sapphire templates, which emitted at 430 nm.

X-ray absorption near-edge structure of hexagonal ternary phases in sputter-deposited TiAlN films

Energy Technology Data Exchange (ETDEWEB)

Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Soldera, F. [Department of Materials Science and Engineering, Saarland University, D-66123 Saarbruecken (Germany); Hübner, R.; Lehmann, J.; Munnik, F. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden (Germany); Vázquez, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Redondo-Cubero, A. [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, 2686-953 Sacavém (Portugal); Endrino, J.L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Abengoa Research S.L., c/Energía Solar 1, Palmas Altas, E-41014 Seville (Spain)

2013-06-05

Highlights: ► Growth of ternary TiAlN films with nearly single-phase wurzite structure. ► Soft X-rays XANES measurements of ternary TiAlN films with wurzite structure. ► Identification of ternary TiAlN hexagonal phases by XANES. ► Correlation of XANES measurements with reported theoretical calculations. -- Abstract: Titanium aluminium nitride (TiAlN) coatings have been grown by reactive (Ar/N{sub 2}) direct-current magnetron sputtering from a Ti{sub 50}Al{sub 50} compound target. The film composition has been quantified by ion beam analysis showing the formation of Al-rich nitrides (Ti/Al ∼ 0.3), with stoichiometric films for N{sub 2} contents in the gas mixture equal or above ∼25%. The surface morphology of the films has been imaged by atomic force microscopy, showing very smooth surfaces with roughness values below 2 nm. X-ray and electron diffraction patterns reveal that the films are nanocrystalline with a wurzite (w) structure of lattice parameters larger (∼2.5%) than those for w-AlN. The lattice expansion correlates with the Ti/Al ratio in stoichiometric films, which suggests the incorporation of Ti into w-AlN. The atomic environments around Ti, Al and N sites have been extracted from the X-ray absorption near-edge structure (XANES) by recording the Ti2p, Al1s and N1s edges, respectively. The analysis of the XANES spectral lineshape and comparison with reported theoretical calculations confirm the formation of a ternary hexagonal phase.

Quasi-two-dimensional superconductivity in wurtzite-structured InN films

International Nuclear Information System (INIS)

Ling, D.C.; Cheng, J.H.; Lo, Y.Y.; Du, C.H.; Chiu, A.P.; Chang, P.H.; Chang, C.A.

2007-01-01

C-axis oriented InN films with wurtzite structure were grown on sapphire(0001) substrate by MOCVD method. Superconductivity with transition onset temperature T c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1 x 10 19 cm -3 to 7 x 10 20 cm -3 . Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR/R∝(H/R) 2 , indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H c2 ab (0) and H c2 c (0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The adsorber loop concept for the contact between seawater and adsorber granulate

International Nuclear Information System (INIS)

Koske, P.H.; Ohlrogge, K.

1984-01-01

The present paper deals with the so-called ''adsorber loop concept'' in which the adsorber granulate is carried along with the seawater to be processed in a loop-like configuration and is separated again from the depleted water before this is leaving the adsorption unit. This concept enables high seawater velocities thus reducing the required bed area. Theoretical considerations are presented together with experimental results from field tests. (orig.) [de

Stripe domains in Fe-Zr-N nanocrystalline films

NARCIS (Netherlands)

Craus, C.B.; Craus, C.B.; Chezan, A.R.; Siekman, Martin Herman; Lodder, J.C.; Boerma, D.O.; Niesen, L.

2002-01-01

We report on the transition between a magnetic stripe domain structure and in-plane orientation of the spins, as a function of nitrogen content, for 500nm thick Fe-Zr-N films prepared by DC reactive sputtering on glass substrates. The saturation field decreases and the saturation magnetization

Process for producing zeolite adsorbent and process for treating radioactive liquid waste with the zeolite adsorbent

International Nuclear Information System (INIS)

Motojima, K.; Kawamura, F.

1984-01-01

Zeolite is contacted with an aqueous solution containing at least one of copper, nickel, cobalt, manganese and zinc salts, preferably copper and nickel salts, particularly preferably copper salt, in such a form as sulfate, nitrate, or chloride, thereby adsorbing the metal on the zeolite in its pores by ion exchange, then the zeolite is treated with a water-soluble ferrocyanide compound, for example, potassium ferrocyanide, thereby forming metal ferrocyanide on the zeolite in its pores. Then, the zeolite is subjected to ageing treatment, thereby producing a zeolite adsorbent impregnated with metal ferrocyanide in the pores of zeolite. The adsorbent can selectively recover cesium with a high percent cesium removal from a radioactive liquid waste containing at least radioactive cesium, for example, a radioactive liquid waste containing cesium and such coexisting ions as sodium, magnesium, calcium and carbonate ions at the same time at a high concentration. The zeolite adsorbent has a stable adsorbability for a prolonged time

The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Ahn, Yong Nam; Lee, Sung Hoon; Lim, Sung Keun; Woo, Kwang Je; Kim, Hyunbin

2015-01-01

Highlights: • Atomistic simulations of inversion domain boundary (IDB) in GaN were performed. • The existence of IDBs in GaN films leads to the reduction of the film stiffness. • A sudden reduction of IDB density induces a strong tensile stress within the films. • The density of IDB in GaN film can be controlled by adjusting GaCl/NH 3 flow ratio. • A microstructure of GaN buffer layer for minimization of stress was proposed. - Abstract: Inversion domain boundaries (IDBs) are frequently found in GaN films grown on sapphire substrates. However, the lack of atomic-level understandings about the effects of the IDBs on the properties of GaN films has hindered to utilize the IDBs for the stress release that minimizes the crack-formation in GaN films. This study performed atomistic computational analyses to fundamentally understand the roles of the IDBs in the development of the stresses in the GaN films. A sudden reduction of the IDB density induces a strong intrinsic stress in the GaN films, possibly leading to the mud-cracking of the films. A gradual decrease in the IDB density was achieved by slowly reducing the GaCl flux during the growth process of GaN buffer layer on sapphire substrates, and allowed us to experimentally demonstrate the successful fabrication of 4-in. crack-free GaN films. This approach may contribute to the fabrication of larger crack-free GaN films

The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ahn, Yong Nam, E-mail: ynahn81@gmail.com; Lee, Sung Hoon, E-mail: sunghoon.lee@corning.com; Lim, Sung Keun, E-mail: sk96.lim@samsung.com; Woo, Kwang Je, E-mail: kwangje.woo@corning.com; Kim, Hyunbin, E-mail: hyunbin.kim@corning.com

2015-03-15

Highlights: • Atomistic simulations of inversion domain boundary (IDB) in GaN were performed. • The existence of IDBs in GaN films leads to the reduction of the film stiffness. • A sudden reduction of IDB density induces a strong tensile stress within the films. • The density of IDB in GaN film can be controlled by adjusting GaCl/NH{sub 3} flow ratio. • A microstructure of GaN buffer layer for minimization of stress was proposed. - Abstract: Inversion domain boundaries (IDBs) are frequently found in GaN films grown on sapphire substrates. However, the lack of atomic-level understandings about the effects of the IDBs on the properties of GaN films has hindered to utilize the IDBs for the stress release that minimizes the crack-formation in GaN films. This study performed atomistic computational analyses to fundamentally understand the roles of the IDBs in the development of the stresses in the GaN films. A sudden reduction of the IDB density induces a strong intrinsic stress in the GaN films, possibly leading to the mud-cracking of the films. A gradual decrease in the IDB density was achieved by slowly reducing the GaCl flux during the growth process of GaN buffer layer on sapphire substrates, and allowed us to experimentally demonstrate the successful fabrication of 4-in. crack-free GaN films. This approach may contribute to the fabrication of larger crack-free GaN films.

Adsorbent Alkali Conditioning for Uranium Adsorption from Seawater. Adsorbent Performance and Technology Cost Evaluation

International Nuclear Information System (INIS)

Tsouris, Costas; Mayes, Richard T.; Janke, Christopher James; Dai, Sheng; Das, S.; Liao, W.P.; Kuo, Li-Jung; Wood, Jordana; Gill, Gary; Byers, Maggie Flicker; Schneider, Eric

2015-01-01

The Fuel Resources program of the Fuel Cycle Research and Development program of the Office of Nuclear Energy (NE) is focused on identifying and implementing actions to assure that nuclear fuel resources are available in the United States. An immense source of uranium is seawater, which contains an estimated amount of 4.5 billion tonnes of dissolved uranium. This unconventional resource can provide a price cap and ensure centuries of uranium supply for future nuclear energy production. NE initiated a multidisciplinary program with participants from national laboratories, universities, and research institutes to enable technical breakthroughs related to uranium recovery from seawater. The goal is to develop advanced adsorbents to reduce the seawater uranium recovery technology cost and uncertainties. Under this program, Oak Ridge National Laboratory (ORNL) has developed a new amidoxime-based adsorbent of high surface area, which tripled the uranium capacity of leading Japanese adsorbents. Parallel efforts have been focused on the optimization of the physicochemical and operating parameters used during the preparation of the adsorbent for deployment. A set of parameters that need to be optimized are related to the conditioning of the adsorbent with alkali solution, which is necessary prior to adsorbent deployment. Previous work indicated that alkali-conditioning parameters significantly affect the adsorbent performance. Initiated in 2014, this study had as a goal to determine optimal parameters such as base type and concentration, temperature, and duration of conditioning that maximize the uranium adsorption performance of amidoxime functionalized adsorbent, while keeping the cost of uranium production low. After base-treatment at various conditions, samples of adsorbent developed at ORNL were tested in this study with batch simulated seawater solution of 8-ppm uranium concentration, batch seawater spiked with uranium nitrate at 75-100 ppb uranium, and continuous

Adsorbent Alkali Conditioning for Uranium Adsorption from Seawater. Adsorbent Performance and Technology Cost Evaluation

Energy Technology Data Exchange (ETDEWEB)

Tsouris, Costas [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Mayes, Richard T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Janke, Christopher James [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Dai, Sheng [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Das, S. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Liao, W. -P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kuo, Li-Jung [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wood, Jordana [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Gill, Gary [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Byers, Maggie Flicker [Univ. of Texas, Austin, TX (United States); Schneider, Eric [Univ. of Texas, Austin, TX (United States)

2015-09-30

The Fuel Resources program of the Fuel Cycle Research and Development program of the Office of Nuclear Energy (NE) is focused on identifying and implementing actions to assure that nuclear fuel resources are available in the United States. An immense source of uranium is seawater, which contains an estimated amount of 4.5 billion tonnes of dissolved uranium. This unconventional resource can provide a price cap and ensure centuries of uranium supply for future nuclear energy production. NE initiated a multidisciplinary program with participants from national laboratories, universities, and research institutes to enable technical breakthroughs related to uranium recovery from seawater. The goal is to develop advanced adsorbents to reduce the seawater uranium recovery technology cost and uncertainties. Under this program, Oak Ridge National Laboratory (ORNL) has developed a new amidoxime-based adsorbent of high surface area, which tripled the uranium capacity of leading Japanese adsorbents. Parallel efforts have been focused on the optimization of the physicochemical and operating parameters used during the preparation of the adsorbent for deployment. A set of parameters that need to be optimized are related to the conditioning of the adsorbent with alkali solution, which is necessary prior to adsorbent deployment. Previous work indicated that alkali-conditioning parameters significantly affect the adsorbent performance. Initiated in 2014, this study had as a goal to determine optimal parameters such as base type and concentration, temperature, and duration of conditioning that maximize the uranium adsorption performance of amidoxime functionalized adsorbent, while keeping the cost of uranium production low. After base-treatment at various conditions, samples of adsorbent developed at ORNL were tested in this study with batch simulated seawater solution of 8-ppm uranium concentration, batch seawater spiked with uranium nitrate at 75-100 ppb uranium, and continuous

Stabilization of N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)benzidine thin film morphology with UV light

Energy Technology Data Exchange (ETDEWEB)

Tomović, A.Ž.; Markešević, N. [Institute of Physics, University of Belgrade, Pregrevica 118, 11000 Belgrade (Serbia); Scarpellini, M.; Bovio, S. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy); Lucenti, E. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy); Institute of Molecular Science and Technology of CNR, via Golgi 19, 20133 Milan (Italy); Milani, P. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy); Zikic, R. [Institute of Physics, University of Belgrade, Pregrevica 118, 11000 Belgrade (Serbia); Jovanović, V.P., E-mail: vladimir.jovanovic@ipb.ac.rs [Institute of Physics, University of Belgrade, Pregrevica 118, 11000 Belgrade (Serbia); Srdanov, V.I. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy)

2014-07-01

Owing to their low glass transition temperature, T{sub g}, amorphous thin films of N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)benzidine (TPD) undergo morphological changes even at room temperature. It has been noticed previously that exposure to UV light can increase apparent T{sub g} of TPD films and thus stabilize their morphology. However, the reason behind increase in structural stability was not examined at the time. Here we present evidence that TPD molecules undergo photo-oxidation in air when exposed to λ ≈ 350 nm radiation and that less than 5% of the photo-oxidized species are needed to prevent dewetting of thin TPD films. We propose that photo-oxidized TPD species bind strongly to both ordinary TPD molecules and to terminal hydroxyl groups at the substrate surface, which decreases mobility of TPD molecules and makes thin TPD film less prone to morphology changes. - Highlights: • We made variable thickness TPD films and exposed them to UV light under ambient conditions. • Mass spectroscopy and proton NMR measurements of irradiated and pristine TPD films • TPD molecules undergo oxidation process under UV light irradiation. • Dipole–dipole interactions may be responsible for stabilization of morphological changes.

Influence of metallic surface states on electron affinity of epitaxial AlN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2017-06-15

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

Science.gov (United States)

Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

2018-05-01

GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

A Multi-technique Characterization of Adsorbed Protein Films: Orientation and Structure by ToF-SIMS, NEXAFS, SFG, and XPS

Science.gov (United States)

Baio, Joseph E.

immobilization schemes. This protein contained both a hexahistidine tag and a cysteine residue, introduced at opposite ends of the HuLys Fv, for immobilization onto nitrilotriacetic acid (NTA) and maleimide oligo- (ethylene glycol) (MEG)-terminated substrates. The thiol group on the cysteine residue selectively binds to the MEG groups, while the his-tag selectively binds to the Ni-loaded NTA groups. XPS was used to monitor protein coverage on both surfaces by following the change in the nitrogen atomic %. The ToF-SIMS data provided a clear differentiation between the two samples due to the intensity differences of secondary ions originating from asymmetrically located amino acids in HuLys Fv. Indicating that the HuLys Fv fragment when adsorbed into the NTA and MEG substrates will be induced into two different orientations. On the NTA substrate the protein's binding site is accessible, while on the MEG substrate the binding site is oriented towards the surface. By taking advantage of the electron pathway through the heme group in cytochrome c (CytoC) electrochemists have built sensors based upon CytoC immobilized onto functionalized metal electrodes. When immobilized onto a charged surface, CytoC, with its distribution of lysine and glutamate residues around its surface, should orient and form a well-ordered protein film. Here a detailed examination of CytoC orientation when electrostatically immobilized onto both amine (NH 3+) and carboxyl (COO-) functionalized gold is presented. Again, protein coverage, on both surfaces, was monitored by the change in the atomic % N, as determined by XPS. ToF-SIMS data demonstrated a clear separation between the two samples based on the intensity differences of secondary ions stemming from amino acids located asymmetrically within CytoC, indicating opposite orientations of the protein on the two different surfaces. Spectral features within the in situ sum frequency generation vibrational spectra, acquired for the protein interacting with

Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

International Nuclear Information System (INIS)

Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

2010-01-01

Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

Thermal stability, microstructure and mechanical properties of Ti1-xZrxN thin films

International Nuclear Information System (INIS)

Hoerling, A.; Sjoelen, J.; Willmann, H.; Larsson, T.; Oden, M.; Hultman, L.

2008-01-01

Single-phase [NaCl]-structure Ti 1-x Zr x N thin films (0 1-x Zr x N films is proposed to be solid-solution hardening through local lattice strain fields originating from difference in atomic radius of Ti and Zr. The material system is thus promising for cutting tool applications

Wettability of TiAlN films by molten aluminum

Energy Technology Data Exchange (ETDEWEB)

Shen Ping [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan) and Key Laboratory of Automobile Materials, Department of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun, 130025 (China)]. E-mail: shenping@jlu.edu.cn; Nose, Masateru [Department of Industrial Art and Craft, Takaoka National College, 180 Futagami-machi, Takaoka City, Toyama 933-8588 (Japan); Fujii, Hidetoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan); Nogi, Kiyoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan)

2006-12-05

In this study, we made an attempt to measure the wettability of the TiAlN films by molten Al at temperatures between 1073 K and 1273 K using an improved sessile drop method. The true contact angles cannot be obtained for the films deposited on the stainless steel and tungsten substrates due to considerable interdiffusion or reaction between molten Al and the substrate constituents. For the films deposited on the stable alumina single crystals and in contact with clean Al, the true contact angles are possible in the range of 80-100 deg. at 1173-1273 K and the work of adhesion is 0.77-1.08 J m{sup -2}. In the case of oxidized Al, typically at T < 1173 K, however, the wettability and the adhesion are significantly decreased.

Fabrication of Si3N4 thin films on phynox alloy substrates for electronic applications

Science.gov (United States)

Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

2018-04-01

Thin films of Si3N4 are deposited on Phynox alloy substrates using radio frequency magnetron sputtering. The thickness of the films was varied between 80-150 nm by increasing the duration of deposition from 1 to 3 h at a fixed power density and working pressure. X-ray diffraction patterns reveal that the Si3N4 films had crystallized inspite of the substrates not being heated during deposition. This was confirmed using selected area electron diffraction and high resolution transmission electron microscopy also. It is postulated that a low lattice misfit between Si3N4 and Phynox provides energetically favourable conditions for ambient temperature crystallization. The hardness of the films is of the order of 6 to 9 GPa.

Growth Process of Passive Films Formed on Austenitic Stainless Steels under Atmospheric Environments

Energy Technology Data Exchange (ETDEWEB)

Jung, Rock-Hoon [Samsung Heavy Industries Co.,Ltd, Seoul (Korea, Republic of); Fujimoto, Shinji [Osaka University, Osaka (Japan)

2014-06-15

The excellent protection ability of stainless steel derives from the highly Cr enriched passive film which is formed as a result of selective dissolution of Fe into the bulk solution. On the other hand, the passive films formed under atmospheric conditions do not necessarily exhibit Cr enrichment, because the amount of the solution on a stainless steel as an adsorbed thin water layer is not sufficient for selective dissolution of Fe. Therefore, the modification of passive films may occur as tiny mass transfer between hydroxide layer and oxide layer of the passive films, and/or occasional replace of the adsorbed thin water layer. In the present work, in order to discuss atmospheric corrosion, passive films on stainless steels formed under humid atmospheric environments were characterized using X-ray photoelectron spectroscopy. Optimal conditions for the pulse anodizing were a duty ratio of 91%, a frequency of 0.09 Hz, and an anodizing time of 600 s. Pulse anodizing caused a remarkable decrease in the surface porosity (11-fold) and an increase in the film thickness (1.6-fold) from those obtained under a constant potential of 10 V{sub Ag/AgCl}. Furthermore, an Al-enriched oxide layer was formed on the outer surface of MgO.

Mercury adsorption to gold nanoparticle and thin film surfaces