Sample records for stacking faults

Sample records 1 - 1 shown.


Defeitos superficiais em 2H-WS2 observados por microscopia de tunelamento/ Surface defects on 2H-WS2 detected by scanning tunnelling microscopy

Wypych, F.; Weber, Th.; Prins, R.

Resumo em inglês Scanning tunnelling microscopy (STM) was used to characterise the basal surface of fresh cleaved crystals of 2H-WS2. Although no impurity or stacking faults could be detected by X-ray diffraction, STM images obtained with negative bias voltage showed two kinds of defects. These defects were attributed to an iodine derivative used as transport agent. In a flat surface free of defects, an image with atomic resolution was achieved with sulphur distances and angles as expected for hexagonal symmetry of 2H-WS2.

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