Sample records for DISPOSITIFS ZT-P (zt-p devices)
from WorldWideScience.org

Sample records 1 - 17 shown.



1

echerches


de O BENSAOUD - 1994 - Cité 4 fois - Autres articleszt.+1 = DtTy At, Dt1z tn. Traitement du Signal 1994 - Volume 11 - n° 3 ..... [7] O. CHUA, P. LIN, « Computer aided analysis of electronic devices », ...

IRevues (France)

2

Stresa, Italy, 26-28 April 2006 MACRO AND MICRO SCALE ...


The practical results from micro devices fabricated under an EU project entitled .... P equals 0.0023. The Q factor of the generator with parasitic damping ignored can be ... z0, in the microgenerators can be calculated from zt=QYt. ...

IRevues (France)

3

Stresa, Italy, 26-28 April 2006 ?TIMA Editions/DTIP 2006 -page ...


This formulation leads to a simple model of parallel plate devices, .... In our modeling, p ? and s ? represent the influence of parasitics. .... be shown that the closed-loop error dynamics satisfy 11 1 1 2 ()| | (0)| ,| k t zt z e ? ...

IRevues (France)

4

SIGNAL ET SES APPLICATIONS


de D DE BRUCQ - 1981 - Autres articlesof pressure catchement devices is greater than ... Le champ P provient de l'émission X des sources et ... Posons Y(g)(œ) à ;pÎ(x, y, z t) dx dy dz dt ...

IRevues (France)

5

Nice, C?te d?Azur, France, 27-29 September 2006 ?TIMA Editions ...


I.e. the temperature response T(t) to any power dissipation profile P(t) can ... At the moment the RC parameters fitted for this device (table 1) just serve ... 0 2 4 6 8 10 12 0.0000001 0.00001 0.001 0.1 10 1000 Time [s] Zt h [ K / W ...

IRevues (France)

7

IIe European Congress of Endoscopy XIIe Congrès International de ...


device for additional operative procedures (e.g. ...... P. PORPACZY. Urologische Abteilung der Allgemeinen Poliklinik der Stadt Wien (Vorstand: Prof. Dr. H. Haschek), Oster- ...... die z.T. in kleineren Serien hergestellt worden ...

IRevues (France)

8

Generation of pseudo-Poisson distributed discrete intervals


de B CERNUSCHI-FRIASFor example, in the optimization of damaged device ... ~F(s)=1-P{t>s}=1-P{x(s)=0}=1-e-zs, ... F (t)=1-e -zt f(t) = Xe -" and the first two moments ...

IRevues (France)

9

Flexible Micro Thermoelectric Generator based on Electroplated Bi2Te3


de E Schwyter - 2008 - Cité 1 fois - Autres articlesstability to the device. The Bi2+xTe3-x µTEG demonstrator .... ∆Tmeas=44.4K and results in an efficiency factor ZT of. 0.18µWcm-2K-2. ...

IRevues (France)

10

DELAY-AND-MULTIPLY DETECTORS FOR SIGNAL


de L IZZO - 1995 - Cité 1 fois - Autres articlesmultiply (PFDM) device followed by a spectral line detector. ABSTRACT ... 1'; zt s;.+ 12,- whereaj; is the itih iapiple of the i€IO-131168.11 cy- deflection interception stm .... tion As a function of d, the ratio p reaches the maximum ...

IRevues (France)

11

COLLOQUE NATIONAL SUR LE TRAITEMENT DU SIGNAL


de A KNOB - 1977 - Autres articlescase of a device performing the FOURIER transform of both the functions of' autocorre ... eux p onstituée ee -T, hercher s sont avec. Zfij. 3 ZT flT( e ...

IRevues (France)

12

Budapest, Hungary, 17-19 September 2007 ?EDA Publishing/THERMINIC ...


Sep 19, 2007 ... In order to make smaller devices possible, new technologies that ..... 0,0001 0001 0,01 0,1 1 10 Time [s] Zt h [ K / W ] P=1W P=50W P=100W P.

IRevues (France)

13

Belgirate, Italy, 28-30 September 2005 THERMIONIC REFRIGERATION ...


Especially in opto-electronic devices very high power densities occur over a ... ZT values of 2.4 have been achieved for phonon blocking lattices [7] (low ..... The generator effi- ciency ? is defined as delivered power P = Vbias |Jen| ...

IRevues (France)

14

Analyse multirésolution L2−optimale : estimation par quasi ...


de L CONDAT - 2005 - Cité 1 fois - Autres articlesPT (z)/QT (zT ) avec PT (z) = z. −T −1(z + ··· + zT )2 ... nideal acquisition devices”, IEEE Trans. Signal Proc., vol. 42, no 11, p. 1915–2925, Nov. 1994. ...

IRevues (France)

15

AN EXTENDABLE MULTI-PURPOSE SIMULATION AND OPTIMIZATION FRAMEWORK ...


Today's semiconductor devices and interconnect structures have already reached a ... All in Siesta available optimization techniques Żt well for highly .... Heated Side Cooled Side p-Layer n-Layer pn-Junction Contacts Generation Zone ...

IRevues (France)

16

A linearity test for a class of processes with long-range


de FM APARICIO ACOSTA - 1995 - Autres articlesficiently mixing process zt, from an appropriate test function zt : i,Da(Yt), which will restore the balance of ... of some nonlinear sensor devices measuring a LRD .... tion yt : :vtea:p(—o2:z:?), where at is a fractionally ...

IRevues (France)

17

9-11 April 2008 ?EDA Publishing/DTIP 2008 ISBN: 978-2-35500-006-5 ...


Due to the limited thickness of the device and the non perfect thermal contact to ... 10000 100000 1 10 100 1000 10000 100000 TC length [?m] P o w e r p e r are a [ ? ... T meas =44.4K and results in an efficiency factor ZT of 0.18? ...

IRevues (France)