Sample records for COMPUESTOS DE INDIO (indium compounds)
from WorldWideScience.org

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1

Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

Granados, Daniel; García, Jorge M.; Ben, Teresa; Molina, Sergio I.
2005-02-10

Digital.CSIC (Spain)

2

Tuning of spontaneous emission of two-dimensional photonic crystal microcavities by accurate control of slab thickness

Alija, Alfonso R.; Martínez Rodríguez, Luis Javier; García-Martín, Antonio; Dotor, María Luisa; Golmayo, Dolores; Postigo, Pablo Aitor
2005-03-29

Digital.CSIC (Spain)

3

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

Nowak, A. K.; Gallardo, E.; Sarkar, D.; Van der Meulen, H. P.; Calleja, J. M.; Ripalda, José María; González, Yolanda; González, Luisa
2009-10-14

Digital.CSIC (Spain)

4

Synthesis, characterization, and photoactivity of InTaO4 and In0.9Ni0.1TaO4 thin films prepared by electron evaporation

Rico, V. J.; Frutos, F.; Yubero Valencia, Francisco; Espinós Manzorro, Juan Pedro; González-Elipe, Agustín R.
2009-12-23

Digital.CSIC (Spain)

6

Strain-induced optical anisotropy in self-organized quantum structures at the E1 transition

Prieto, J. A.; Armelles Reig, Gaspar; Priester, C.; García, Jorge M.; González, Luisa; García García, Ricardo
2000-04-17

Digital.CSIC (Spain)

7

Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)

García, Jorge M.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando
2000-07-17

Digital.CSIC (Spain)

8

Strain determination in MBE-grown InAs quantum wires on InP

Mazuelas, A.; González, Luisa; García, Jorge M.; González, Yolanda; Schuelli, T.; Priester, C.; Metzger, T. H.
2006-01-12

Digital.CSIC (Spain)

9

Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

Fuster, David; González, María Ujué; González, Luisa; González, Yolanda; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.
2004-06-20

Digital.CSIC (Spain)

10

Size quantization effects in InAs self-assembled quantum dots

Schmidt, K. H.; Medeiros-Ribeiro, Gilberto; García, Jorge M.; Petroff, P. M.
1997-01-01

Digital.CSIC (Spain)

11

Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange

Fuster, David; González, María Ujué; González, Luisa; González, Yolanda; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.; Martínez-Pastor, Juan
2004-08-23

Digital.CSIC (Spain)

13

Size and emission wavelength control of InAs/InP quantum wires

Fuster, David; González, Luisa; González, Yolanda; González, María Ujué; Martínez-Pastor, Juan
2005-08-03

Digital.CSIC (Spain)

14

Self-assembled InAs quantum wire lasers on (001)InP at 1.6 µm

Suárez, Ferran; Fuster, David; González, Yolanda; González, Luisa; García, Jorge M.; Dotor, María Luisa
2006-09-01

Digital.CSIC (Spain)

15

Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

González-Arrabal, R.; González, Yolanda; González, Luisa; García-Hernández, M.; Munnik, F.; Martín-González, M. S.

We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 °C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implan...

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16

Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

González-Arrabal, Raquel; González, Yolanda; González, Luisa; García-Hernández, M.; Munnik, F.; Martín-González, Marisol S.
2009-04-06

Digital.CSIC (Spain)

17

Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

Liu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Suárez, Ferran; Ng, J. S.; Hopkinson, M.; David, J. P. R.
2006-02-24

Digital.CSIC (Spain)

18

Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb

Ripalda, José María; Granados, Daniel; González, Yolanda; Sánchez, A. M.; Molina, Sergio I.; García, Jorge M.
2005-11-09

Digital.CSIC (Spain)

19

Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Rodríguez-Fernández, J.; Carcelén, V.; Hidalgo, P.; Vijayan, N.; Piqueras, J.; Sochinskii, N. V.; Pérez, J. M.; Diéguez, E.
2009-08-18

Digital.CSIC (Spain)

20

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Angelova, T.; Cros, A.; Cantarero, A.; Fuster, David; González, Luisa; González, Yolanda

http://link.aip.org/link/?JAPIAU/104/033523/1 | Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire ...

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21

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

Angelova, T.; Cros, A.; Cantarero, A.; Fuster, David; González, Luisa; González, Yolanda
2008-08-06

Digital.CSIC (Spain)

22

Raman scattering of InSb quantum dots grown on InP substrates

Armelles Reig, Gaspar; Utzmeier, T.; Postigo, Pablo Aitor; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró, P.; Cornet, A.
1997-05-01

Digital.CSIC (Spain)

23

Quenching and enhancement of high energy luminescence from self assembled InAs/GaAs quantum dots under low external electric fields

Biswas, Dipankar; Alén, Benito; Bosch, J.; Martínez-Pastor, Juan; García, Jorge M.; González, Luisa
2002-04-12

Digital.CSIC (Spain)

24

Photonic use of intermediate band materials based on a chalcogenide-type semiconductor

Conesa Cegarra, José Carlos; Lucena García, Raquel; Wahnón Benarroch, Perla; Palacios Clemente, Pablo; Fernández Sánchez, Julio Juan; Sánchez Noriega, Kefren; Aguilera Bonet, Irene
2010-04-07

Digital.CSIC (Spain)

25

Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

Paskov, P. P.; Holtz, P. O.; Monemar, B.; García, Jorge M.; Schoenfeld, W. V.; Petroff, P. M.
2000-08-07

Digital.CSIC (Spain)

26

Oscillatory persistent currents in self-assembled quantum rings

Kleemans, N.A.J.M.; Bominaar-Silkens, I.M.A.; Fomin, V.M.; Gladilin, V.N.; Granados, Daniel; Taboada, A.G.

We report the direct measurement of the persistent current carried by a single electron by means of magnetization experiments on self-assembled InAs/GaAs quantum rings. We measured the first Aharonov-Bohm oscillation at a field of 14 T, in perfect agreement with our model based on the structural pro...

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27

Oscillatory persistent currents in self-assembled quantum rings

Kleemans, N. A. J. M.; Bominaar-Silkens, I. M. A.; Fomin, V. M.; Gladilin, V. N.; Granados, Daniel; Taboada, A. G.; García, Jorge M.; Offermans, P.; Zeitler, U.; Christianen, P. C. M.; Maan, J. C.; Devreese, J. T.; Koenraad, P. M.
2007-10-05

Digital.CSIC (Spain)

28

Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

Alén, Benito; Bosch, J.; Martínez-Pastor, Juan; Granados, Daniel; García, J.M.; González, Luisa

We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external...

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29

Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

Alén, Benito; Bosch, J.; Martínez-Pastor, Juan; Granados, Daniel; García, Jorge M.; González, Luisa
2007-01-10

Digital.CSIC (Spain)

30

Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires

Alén, Benito; Martínez-Pastor, Juan; García-Cristobal, Alberto; González, Luisa; García, Jorge M.
2001-04-25

Digital.CSIC (Spain)

32

Microstructural improvements of InP on GaAs „001… grown by molecular

Morales, F. M.; García García, Ricardo; Molina, Sergio I.; Aouni, A.; Postigo, Pablo Aitor; Fonstad, C. G.
2009-01-30

Digital.CSIC (Spain)

33

Manipulating exciton fine structure in quantum dots with a lateral electric field

Gerardot, B.D.; Seidl, S.; Dalgarno, P.A.; Warburton, R.J.; Granados, Daniel; García, J.M.; Kowalik, K.

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The auth...

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34

Manipulating exciton fine structure in quantum dots with a lateral electric field

Gerardot, B. D.; Seidl, Stefan; Dalgarno, P. A.; Warburton, Richard J.; Granados, Daniel; García, Jorge M.; Kowalik, K.; Krebs, O.; Karrai, Khaled; Badolato, Antonio; Petroff, Pierre M.
2007-01-22

Digital.CSIC (Spain)

35

Low density InAs quantum dots with control in energy emission and top surface location

Alonso-González, Pablo; Martín-Sánchez, Javier; González, Yolanda; González, Luisa; Fuster, David

In this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to t...

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36

Low density InAs quantum dots with control in energy emission and top surface location

Alonso-González, Pablo; Martín-Sánchez, Javier; González, Yolanda; González, Luisa; Fuster, David
2008-11-04

Digital.CSIC (Spain)

37

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

Maimon, S.; Finkman, E.; Bahir, G.; Schacham, S. E.; García, Jorge M.; Petroff, P. M.
1998-10-05

Digital.CSIC (Spain)

38

Intermixing and shape changes during the formation of InAs self-assembled quantum dots

García, Jorge M.; Medeiros-Ribeiro, Gilberto; Schmidt, K. H.; Ngo, T.; Feng, J. L.; Lorke, Axel; Kotthaus, Jörg P.; Petroff, P. M.
1997-01-01

Digital.CSIC (Spain)

39

Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

González, Luisa; García, Jorge M.; García García, Ricardo; Briones Fernández-Pola, Fernando; Martínez-Pastor, Juan; Ballesteros, C.
2000-02-28

Digital.CSIC (Spain)

40

InAs/InP single quantum wire formation and emission at 1.5 µm

Alén, Benito; Fuster, David; González, Yolanda; González, Luisa; Martínez-Pastor, Juan
2006-12-08

Digital.CSIC (Spain)

42

In situ measurements of InAs and InP (0 0 1) surface stress changes induced by surface reconstruction transitions

Fuster, David; González, María Ujué; González, Yolanda; González, Luisa
2006-01-01

Digital.CSIC (Spain)

43

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

González, María Ujué; González, Yolanda; González, Luisa; Calleja, Montserrat; Sánchez Gil, José Antonio
2001-03-01

Digital.CSIC (Spain)

44

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Postigo, Pablo Aitor; Suárez, Ferrán; Sanz-Hervás, A.; Sangrador, J.; Fonstad, C. G.

5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi. | Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial s...

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45

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Postigo, Pablo Aitor; Suárez, Ferran; Sanz-Hervás, A.; Sangrador, J.; Fonstad, C. G.
2008-01-09

Digital.CSIC (Spain)

46

Growth and characterization of (InSb)m(InP)n short period superlattices

Postigo, Pablo Aitor; Briones Fernández-Pola, Fernando; Castrillo, P.; Sanz-Hervás, A.; Aguilar, M.; Abril, E. J.
1997-01-01

Digital.CSIC (Spain)

47

Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Alonso-González, Pablo; Alen, Benito; Fuster, David; González, Yolanda; González, Luisa; Martínez-Pastor, Juan

We present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs (001). The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the g...

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48

Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Alonso-González, Pablo; Alén, Benito; Fuster, David; González, Yolanda; González, Luisa; Martínez-Pastor, Juan
2007-10-16

Digital.CSIC (Spain)

49
50

Excitons in coupled InAs/InP self-assembled quantum wires

Sidor, Y.; Partoens, B.; Peeters, F.M.; Ben, T.; Ponce, A.; Molina, S.I.; Sales, D.L.; Fuster, David

Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective-mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states, and the photoluminescenc...

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51

Excitons in coupled InAs/InP self-assembled quantum wires

Sidor, Y.; Partoens, B.; Peeters, F. M.; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.; Sales, D. L.; Fuster, David; González, Luisa; González, Yolanda
2007-03-29

Digital.CSIC (Spain)

52

Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field

Sidor, Y.; Partoens, B.; Peeters, F.M.; Maes, J.; Hayne, M.; Fuster, David; González, Yolanda; González, Luisa

The charge confinement in InAs/InP based quantum wells and self-assembled quantum wires is investigated theoretically and experimentally through the study of the exciton diamagnetic shift. The numerical calculations are performed within the single-band effective mass approximation, including band no...

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53

Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field

Sidor, Y.; Partoens, B.; Peeters, F. M.; Maes, J.; Hayne, M.; Fuster, David; González, Yolanda; González, Luisa; Moshchalkov, V. V.
2007-11-19

Digital.CSIC (Spain)

55

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

Ripalda, J.M.; Alonso-Alvarez, D.; Alén, Benito; Taboada, A.G.; García, J.M.; González, Yolanda; González, Luisa

The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separatin...

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56

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

Ripalda, José María; Alonso-Álvarez, D.; Alén, Benito; Taboada, A. G.; García, Jorge M.; González, Yolanda; González, Luisa
2007-07-05

Digital.CSIC (Spain)

57

Enhanced quantum efficiency of Ge solar cells by a two-dimensional photonic crystal nanostructured surface

Prieto-González, Iván; Galiana, B.; Postigo, Pablo Aitor; Algora, C.; Martínez Rodríguez, Luis Javier; Rey-Stolle, I.
2009-05-11

Digital.CSIC (Spain)

58

Electronic states tuning of InAs self-assembled quantum dots

García, Jorge M.; Mankad, T.; Holtz, P. O.; Wellmann, P. J.; Petroff, P. M.
1998-06-15

Digital.CSIC (Spain)

59

Electrical and optical properties of Be doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy

Postigo, Pablo Aitor; Dotor, María Luisa; Huertas, P.; García, Fernando; Golmayo, Dolores; Briones Fernández-Pola, Fernando
1999-01-01

Digital.CSIC (Spain)

60
61

Direct imaging of quantum wires nucleated at diatomic steps

Molina, S.I.; Varela, M.; Sales, D.L.; Ben, T.; Pizarro, J.; Galindo, P.L.; Fuster, David; González, Yolanda

Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for stra...

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62

Direct imaging of quantum wires nucleated at diatomic steps

Molina, Sergio I.; Varela, M.; Sales, D. L.; Ben, Teresa; Pizarro, J.; Galindo, P. L.; Fuster, David; González, Yolanda; González, Luisa; Pennycook, S. J.
2007-10-02

Digital.CSIC (Spain)

63

Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

Fuster, David; Rivera, Antonio; Alen, Benito; Aonso-González, Pablo; González, Yolanda; González, Luisa

We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated depositi...

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64

Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

Fuster, David; Rivera, Antonio; Alén, Benito; Aonso-González, Pablo; González, Yolanda; González, Luisa
2009-04-01

Digital.CSIC (Spain)

65

Critical size for localization of the L-like conduction states in InAs quantum dots grown on GaAs

Prieto, J. A.; Armelles Reig, Gaspar; García, Jorge M.; González, Luisa; San Paulo, Álvaro; García García, Ricardo
2000-05-15

Digital.CSIC (Spain)

66

Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductors

Cuscó, Ramón; Artús, Lluís; Ibáñez, Jordi; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.
2000-12-01

Digital.CSIC (Spain)

67

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Offermans, P.; Koenraad, P. M.; Wolter, J. H.; Granados, Daniel; García, Jorge M.; Fomin, V. M.; Gladilin, V. N.; Devreese, J. T.
2005-09-19

Digital.CSIC (Spain)

68

Absorptive and dispersive optical responses of excitons in a single quantum dot

Alén, Benito; Högele, A.; Kroner, M.; Seidl, Stefan; Karrai, Khaled; Warburton, Richard J.; Badolato, Antonio; Medeiros-Ribeiro, Gilberto; Petroff, Pierre M.
2006-09-22

Digital.CSIC (Spain)