Sample records for COMPUESTOS DE GALIO (gallium compounds)
from WorldWideScience.org

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1

Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

Granados, Daniel; García, Jorge M.; Ben, Teresa; Molina, Sergio I.
2005-02-10

Digital.CSIC (Spain)

2

Tuning of spontaneous emission of two-dimensional photonic crystal microcavities by accurate control of slab thickness

Alija, Alfonso R.; Martínez Rodríguez, Luis Javier; García-Martín, Antonio; Dotor, María Luisa; Golmayo, Dolores; Postigo, Pablo Aitor
2005-03-29

Digital.CSIC (Spain)

3

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

Nowak, A. K.; Gallardo, E.; Sarkar, D.; Van der Meulen, H. P.; Calleja, J. M.; Ripalda, José María; González, Yolanda; González, Luisa
2009-10-14

Digital.CSIC (Spain)

6

Size quantization effects in InAs self-assembled quantum dots

Schmidt, K. H.; Medeiros-Ribeiro, Gilberto; García, Jorge M.; Petroff, P. M.
1997-01-01

Digital.CSIC (Spain)

7

Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando
2001-05-15

Digital.CSIC (Spain)

8

Scanning x-ray excited optical luminescence microscopy in GaN

Martínez-Criado, G.; Alén, Benito; Homs, A.; Somogyi, A.; Miskys, C.; Susini, J.; Pereira-Lachataignerais, J.; Martínez-Pastor, Juan
2006-11-29

Digital.CSIC (Spain)

9

Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

González-Arrabal, R.; González, Yolanda; González, Luisa; García-Hernández, M.; Munnik, F.; Martín-González, M. S.

We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 °C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implan...

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10

Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

González-Arrabal, Raquel; González, Yolanda; González, Luisa; García-Hernández, M.; Munnik, F.; Martín-González, Marisol S.
2009-04-06

Digital.CSIC (Spain)

11

Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

Liu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Suárez, Ferran; Ng, J. S.; Hopkinson, M.; David, J. P. R.
2006-02-24

Digital.CSIC (Spain)

12

Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb

Ripalda, José María; Granados, Daniel; González, Yolanda; Sánchez, A. M.; Molina, Sergio I.; García, Jorge M.
2005-11-09

Digital.CSIC (Spain)

13

Quenching and enhancement of high energy luminescence from self assembled InAs/GaAs quantum dots under low external electric fields

Biswas, Dipankar; Alén, Benito; Bosch, J.; Martínez-Pastor, Juan; García, Jorge M.; González, Luisa
2002-04-12

Digital.CSIC (Spain)

14

Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide

Pastor, D.; Olea, J.; Toledano-Luque, M.; Mártil, I.; González-Díaz, G.; Ibáñez, Jordi; Cuscó, Ramón; Artús, Lluís
2009-03-01

Digital.CSIC (Spain)

15

Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

Paskov, P. P.; Holtz, P. O.; Monemar, B.; García, Jorge M.; Schoenfeld, W. V.; Petroff, P. M.
2000-08-07

Digital.CSIC (Spain)

16

Oscillatory persistent currents in self-assembled quantum rings

Kleemans, N.A.J.M.; Bominaar-Silkens, I.M.A.; Fomin, V.M.; Gladilin, V.N.; Granados, Daniel; Taboada, A.G.

We report the direct measurement of the persistent current carried by a single electron by means of magnetization experiments on self-assembled InAs/GaAs quantum rings. We measured the first Aharonov-Bohm oscillation at a field of 14 T, in perfect agreement with our model based on the structural pro...

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17

Oscillatory persistent currents in self-assembled quantum rings

Kleemans, N. A. J. M.; Bominaar-Silkens, I. M. A.; Fomin, V. M.; Gladilin, V. N.; Granados, Daniel; Taboada, A. G.; García, Jorge M.; Offermans, P.; Zeitler, U.; Christianen, P. C. M.; Maan, J. C.; Devreese, J. T.; Koenraad, P. M.
2007-10-05

Digital.CSIC (Spain)

18

Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

Alén, Benito; Bosch, J.; Martínez-Pastor, Juan; Granados, Daniel; García, J.M.; González, Luisa

We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external...

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19

Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

Alén, Benito; Bosch, J.; Martínez-Pastor, Juan; Granados, Daniel; García, Jorge M.; González, Luisa
2007-01-10

Digital.CSIC (Spain)

20

Optical studies of GaAs quantum wells strained to GaP

Prieto, J. A.; Armelles Reig, Gaspar; Pistol, M. E.; Castrillo, P.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando
1997-06-23

Digital.CSIC (Spain)

21

Optical response of two-dimensional few-electron concentric double quantum rings: A local-spin-density-functional theory study

Malet, Francesc; Pi, Martí; Barranco, Manuel; Lipparini, Enrico; Serra, Llorenç

4 pages.-- PACS numbers: 73.21.-b, 73.22.-f, 71.15.Mb.-- ArXiv pre-print: http://arxiv.org/abs/cond-mat/0610841.-- Final full-text version of the paper available at: http://dx.doi.org/10.1103/PhysRevB.74.193309. | We have investigated the dipole charge- and spin-density response of few-electron two-...

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22
23

Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

Castrillo, P.; Armelles Reig, Gaspar; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando; Barbolla, J.
1997-09-08

Digital.CSIC (Spain)

24

Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering

Ibáñez, Jordi; Alarcón-Lladó, Esther; Cuscó, Ramón; Artús, Lluís; Hopkinson, Mark
2007-07-03

Digital.CSIC (Spain)

25

Optical investigation of type II GaSb/GaAs self-assembled quantum dots

Alonso-Alvarez, Diego; Alen, Benito; García, Jorge M.; Ripalda, J.M.

We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement p...

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26

Optical investigation of type II GaSb/GaAs self-assembled quantum dots

Alonso-Álvarez, D.; Alén, Benito; García, Jorge M.; Ripalda, José María
2007-12-26

Digital.CSIC (Spain)

28

Microporous materials (TIQ-6 and METIQ-6) of high surface area active in oxidation reactions

Corma Canós, Avelino; Fornés, Vicente; Díaz Morales, Urbano; Dómine, Marcelo Eduardo
2005-07-16

Digital.CSIC (Spain)

29

Manipulating exciton fine structure in quantum dots with a lateral electric field

Gerardot, B.D.; Seidl, S.; Dalgarno, P.A.; Warburton, R.J.; Granados, Daniel; García, J.M.; Kowalik, K.

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The auth...

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30

Manipulating exciton fine structure in quantum dots with a lateral electric field

Gerardot, B. D.; Seidl, Stefan; Dalgarno, P. A.; Warburton, Richard J.; Granados, Daniel; García, Jorge M.; Kowalik, K.; Krebs, O.; Karrai, Khaled; Badolato, Antonio; Petroff, Pierre M.
2007-01-22

Digital.CSIC (Spain)

31

Lack of Jahn-Teller distortion in highly diluted LaMn1–xGaxO3 (x>0.6)

Sánchez, María Concepción; García, Joaquín; Subías, G.; Blasco, Javier
2006-03-01

Digital.CSIC (Spain)

32

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

Maimon, S.; Finkman, E.; Bahir, G.; Schacham, S. E.; García, Jorge M.; Petroff, P. M.
1998-10-05

Digital.CSIC (Spain)

33

Intermixing and shape changes during the formation of InAs self-assembled quantum dots

García, Jorge M.; Medeiros-Ribeiro, Gilberto; Schmidt, K. H.; Ngo, T.; Feng, J. L.; Lorke, Axel; Kotthaus, Jörg P.; Petroff, P. M.
1997-01-01

Digital.CSIC (Spain)

35

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

González, María Ujué; González, Yolanda; González, Luisa; Calleja, Montserrat; Sánchez Gil, José Antonio
2001-03-01

Digital.CSIC (Spain)

36

High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes

Butun, B.; Biyikli, N.; Kimukin, I.; Aytur, O.; Ozbay, E.; Postigo, Pablo Aitor; Silveira, Juan Pedro; Alija, Alfonso R.
2004-05-24

Digital.CSIC (Spain)

37

High resolution electron microscopy of GaAs capped GaSb nanostructures

Molina, Sergio I.; Beltrán, A. M.; Ben, Teresa; Galindo, P. L.; Guerrero, E.; Taboada, A. G.; Ripalda, José María; Chisholm, M. F.
2009-01-29

Digital.CSIC (Spain)

38

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Postigo, Pablo Aitor; Suárez, Ferrán; Sanz-Hervás, A.; Sangrador, J.; Fonstad, C. G.

5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi. | Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial s...

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39

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Postigo, Pablo Aitor; Suárez, Ferran; Sanz-Hervás, A.; Sangrador, J.; Fonstad, C. G.
2008-01-09

Digital.CSIC (Spain)

40

Gallium self-diffusion in gallium phosphide

Wang, Lei; Volk, A.; Hsu, L.; Haller, E. E.; Erickson, J. W.; Cardona, M.; Ruf, T.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando
1997-02-03

Digital.CSIC (Spain)

41

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

Ripalda, J.M.; Alonso-Alvarez, D.; Alén, Benito; Taboada, A.G.; García, J.M.; González, Yolanda; González, Luisa

The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separatin...

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42

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

Ripalda, José María; Alonso-Álvarez, D.; Alén, Benito; Taboada, A. G.; García, Jorge M.; González, Yolanda; González, Luisa
2007-07-05

Digital.CSIC (Spain)

43

Enhanced quantum efficiency of Ge solar cells by a two-dimensional photonic crystal nanostructured surface

Prieto-González, Iván; Galiana, B.; Postigo, Pablo Aitor; Algora, C.; Martínez Rodríguez, Luis Javier; Rey-Stolle, I.
2009-05-11

Digital.CSIC (Spain)

44

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Offermans, P.; Koenraad, P. M.; Wolter, J. H.; Granados, Daniel; García, Jorge M.; Fomin, V. M.; Gladilin, V. N.; Devreese, J. T.
2005-09-19

Digital.CSIC (Spain)

46

Absorptive and dispersive optical responses of excitons in a single quantum dot

Alén, Benito; Högele, A.; Kroner, M.; Seidl, Stefan; Karrai, Khaled; Warburton, Richard J.; Badolato, Antonio; Medeiros-Ribeiro, Gilberto; Petroff, Pierre M.
2006-09-22

Digital.CSIC (Spain)

47

A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

Aragón, G.; Molina, Sergio I.; Pacheco, F. J.; González, Yolanda; González, Luisa; Briones Fernández-Pola, Fernando; García, Rafael
1994-12-01

Digital.CSIC (Spain)