Sample records for SUPERFICIE DE FERMI (fermi surface)
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1

The role of an electronic surface state in the stopping power of a swift charged particle in front of a metal

Silkin, Viatcheslav M.; Alducin Ochoa, Maite; Juaristi Oliden, Joseba Iñaki; Chulkov, Eugene V.; Echenique, Pedro M.

7 pages, 10 figures.-- Printed version published on Jul 30, 2008. | We study the stopping power and friction coefficient of a slow charged particle moving parallel to noble metal (111) surfaces. In the description of the surface electronic structure, information about a wide energy gap at the surfac...

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2

The role of an electronic surface state in the stopping power of a swift charged particle in front of a metal

Silkin, Viatcheslav M.; Alducin Ochoa, Maite; Juaristi Oliden, Joseba Iñaki; Chulkov, Eugene V.; Echenique, Pedro M.
2008-07-08

Digital.CSIC (Spain)

3

Quantum well and resonance-band split off in a K monolayer on Cu(111)

Schiller, F.; Corso, M.; Urdanpilleta, Marta; Ohta, T.; Bostwick, A.; McChesney, J. L.; Rotenberg, E.

4 pp.-- PACS: 73.20.-r, 73.21.-b, 79.60.Dp. | The potassium monolayer on Cu(111) defines the simplest metallic quantum well that confines a single s-like discrete level. The analysis of the metallization onset in such a K adlayer reveals, however, a subtle electronic structure. The metallic monolaye...

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4

Quantum well and resonance-band split off in a K monolayer on Cu(111)

Schiller, Frederik; Corso, M.; Urdanpilleta, Marta; Ohta, T.; Bostwick, A.; McChesney, J. L.; Rotenberg, E.; Ortega Conejero, J. Enrique
2008-04-25

Digital.CSIC (Spain)

5

Photocatalytic oxidation of aromatic alcohols to aldehydes in aqueous suspension of home prepared titanium dioxide: 2. Intrinsic and surface features of catalysts

Augugliaro, Vincenzo; Kisch, Horst; Loddo, Vittorio; López-Muñoz, María José; Márquez-Álvarez, Carlos; Palmisano, Giovanni; Palmisano, Leonardo; Parrino, Francesco; Yurdakal, Sedat
2008-10-31

Digital.CSIC (Spain)

6

Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Hirahara, T.; Miyamoto, K.; Kimura, A.; Niinuma, Y.; Bihlmayer, G.; Chulkov, Eugene V.; Nagao, Tadaaki; Matsuda, I.; Qiao, S.; Shimada, K.; Namatame, H.; Taniguchi, M.; Hasegawa, S.
2008-08-28

Digital.CSIC (Spain)

7

Manipulating quantum-well states by surface alloying: Pb on ultrathin Ag films

Hirahara, T.; Komorida, T.; Sato, A.; Bihlmayer, G.; Chulkov, Eugene V.; He, K.; Matsuda, I.; Hasegawa, S.

6 pages, 6 figures.-- PACS nrs.: 68.35.-p, 73.20.-r, 79.60.-i, 71.18.+y. | The electronic structure of ultrathin Ag films with 1/3 monolayer (ML) of Pb alloyed at the surface was investigated by angle-resolved photoemission spectroscopy. Compared to clean ultrathin Ag films, the energy positions of ...

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8

Manipulating quantum-well states by surface alloying: Pb on ultrathin Ag films

Hirahara, T.; Komorida, T.; Sato, A.; Bihlmayer, G.; Chulkov, Eugene V.; He, K.; Matsuda, I.; Hasegawa, S.
2008-07-03

Digital.CSIC (Spain)

9

High-Level correlated approach to the jellium surface energy, without uniform-electron-gas input

Constantin, Lucian A.; Pitarke, José María; Dobson, J. F.; García-Lekue, A.; Perdew, J. P.

4 pp.-- PACS nrs.: 71.10.Ca, 71.15.Mb, 71.45.Gm.-- Pre-print available at: http://arxiv.org/abs/0710.5564. | We resolve the long-standing controversy over the metal surface energy: Density-functional methods that require uniform-electron-gas input agree with each other, but not with high-level corre...

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10

High-Level correlated approach to the jellium surface energy, without uniform-electron-gas input

Constantin, Lucian A.; Pitarke, José María; Dobson, J. F.; García-Lekue, A.; Perdew, J. P.
2008-01-24

Digital.CSIC (Spain)

12

Heat capacity measurements of itinerant electron magnetism in Y3Ni13−xCOxB2 system

Rillo, Conrado; Arauzo, Ana B.; Plugaru, N.; Hlil, E. K.; Rubín, Javier; Bartolomé, Juan
2007-09-01

Digital.CSIC (Spain)

14

First-principles investigation of structural and electronic properties of ultrathin Bi films

Koroteev, Y. M.; Bihlmayer, G.; Tchulkov, Eugene V.; Bluegel, S.

7 pp.-- PACS: 73.20.-r, 71.18.+y, 71.70.Ej. | Employing first-principles calculations, we perform a systematic study of the electronic properties of thin (one to six bilayers) films of the semimetal bismuth in (111) and (110) orientation. Due to the different coordination of the surface atoms in the...

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15

First-principles investigation of structural and electronic properties of ultrathin Bi films

Koroteev, Yuri M.; Bihlmayer, G.; Tchulkov, Eugene V.; Bluegel, S.
2008-01-28

Digital.CSIC (Spain)

16

Extended van Hove Singularity and Superconducting Instability in Doped Graphene

González, J.; McChesney, J. L.; Bostwick, A.; Rotenberg, E.; Ohta, T.; Seyller, Thomas; Horn, Karsten
2010-04-02

Digital.CSIC (Spain)

17

Electronic structure of ultrathin bismuth films with A7 and black-phosphorus-like structures

Yaginuma, Shin; Nagaoka, Katsumi; Nagao, Tadaaki; Bihlmayer, G.; Koroteev, Yuri M.; Chulkov, Eugene V.; Nakayama, Tomonobu
2007-12-25

Digital.CSIC (Spain)

18

Electronic Structure of Layered Oxides Containing M2O7 (M = V, Nb) Double Octahedral Slabs

Rousseau, Roger; Palacín, M. R.; Gómez-Romero, P.; Canadell, Enric
1996-02-18

Digital.CSIC (Spain)

19

Confining surface state electrons in less than two dimensions: A spectroscopic study

García, Jorge M.; Sánchez, O.; Segovia, P.; Ortega, J. E.; Álvarez, J.; Vázquez de Parga, A. L.; Miranda, Rodolfo
1995-01-01

Digital.CSIC (Spain)

21

Calculo de Parámetros Electrónicos Para el Grafito Bernal

Villaquirán, Claudia; Gómez, Marisol; Luiggi, Ney
2002-06-01

Resumen en inglés Using ab-initio calculation, we have computed different electronic parameters associated with the transport coefficients of graphite Bernal. Software CRYSTAL¹ was used with a Pople standard STO- 21G* basis set. Different hamiltonians were tested, choosing a restricted Hartree-Fock one, because it generated the best qualitative results. All graphites studied present a valence bandwidth near 0.60 a.u., in agreement with the literature. In hexagonal Bernal graphite the spli (mas) tting of the valence P band was accentuated, and E F = -0.00140 a.u. The surface Fermi is located around the HKH edge of the first Brillouin zone. In general such surfaces present a central electron orbit of maximal size in the plane, which diminish in size when the z component of the vector moves in KH direction. Integrating on the surface Fermi calculates the time relaxation parallel and the time relaxation perpendicular and finally we evaluate the parallel and perpendicular resistivity.

Scientific Electronic Library Online (Spanish)