ZnCdTe/ZnTe Light Emitting Diodes with MgSeTe/ZnTe Superlattice Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy

Ochiai, Y.; Nomura, I.; Che, S.-B.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Weak-microcavity organic light-emitting diodes with improved light-extraction and wide viewing-angle [7231-54]

Cho, S.-H.; Lee, Y.-H.; Song, Y.-W.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Wafer-bonded thin-film surface-roughened light-emitting diodes [4996-05]

Rooman, C.; De Jonge, S.; Karnutsch, C.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Visible-light-emitting diodes based on microcavity concepts [4278-10]

Dumitrescu, M. M.; Saarinen, M. J.; Vilokkinen, V.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques

Wuu, D.-S.; Hsu, S.-C.; Huang, S.-H.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques

Wuu, D.-S.; Hsu, S.-C.; Huang, S.-H.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Vertical GaN based light emitting diodes on metal alloy substrate for solid state lighting application [6134-31]

Doan, T.; Chu, C.; Chen, C.
2006-01-01

German National Library of Science and Technology (GetInfo) (German)

Versatile ultraviolet light emitting diodes for sensor applications

Song, Y.-K.; Nurmikko, A. V.; Gherasimova, M.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Versatile ultraviolet light emitting diodes for sensor applications

Song, Y.-K.; Nurmikko, A. V.; Gherasimova, M.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

The quantum efficiency of green GaInN/GaN light emitting diodes

Zhao, W.; Li, Y.; Detchprohm, T.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

The Effect of Diode Area on the Luminescence of InGaN Quantum Well Light Emitting Diodes Grown by MOCVD

Hansen, M.; Kozodoy, P.; Keller, S.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Temperature and Current Dependent Capture of Injected Carriers in InGaN Single-Quantum-Well Light-Emitting Diodes

Hori, A.; Yasunaga, D.; Satake, A.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes [7617-33]

Zhao, H.; Liu, G.; Tansu, N.
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Silicon nanocrystals based light emitting diodes integrated using all inorganic metal oxides as the charge transport layers [7617-50]

Cheng, A.-J.; Liptak, R.W.; Kortshagen, U.
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Scalability of buried microreflector light-emitting diodes for high-current applications [4996-03]

Illek, S.; Pietzonka, I.; Plossl, A.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Role of Growth Initiation for High-Brightness GaN-Based Light Emitting Diodes

Kern, R. S.; Goetz, W.; Chen, C. H.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Resonant-cavity light-emitting diodes: a review (Invited Paper) [4996-11]

Baets, R. G.; Delbeke, D. G.; Bockstaele, R.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Recent progress of AlGaInP thin-film light-emitting diodes (Invited Paper) [4996-01]

Wirth, R.; Illek, S.; Karnutsch, C.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Radiative and Non-radiative Recombination Processes in Ultra-Violet InGaN Light Emitting Diodes

Narukawa, Y.; Saijou, S.; Kawakami, Y.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Planar substrate-emitting microcavity light-emitting diodes with 20% external QE (Invited Paper) [3002-32]

De Neve, H.; Blondelle, J.; Van Daele, P.
1997-01-01

German National Library of Science and Technology (GetInfo) (German)

Optoelectric properties in the phosphor-doped polymeric light-emitting diodes [4641-22]

Yun, J.-J.; Oh, G.-C.; Park, S.-M.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes [5366-02]

Shen, Y. C.; Wierer, J. J.; Krames, M. R.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Omni-directional reflectors for light-emitting diodes (Invited Paper) [6134-13]

Kim, J. K.; Xi, J.-Q.; Schubert, E. F.
2006-01-01

German National Library of Science and Technology (GetInfo) (German)

Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education [6134-26]

Chang, S.-H.; Chang, Y.-C.; Yang, C.-H.
2006-01-01

German National Library of Science and Technology (GetInfo) (German)

New architectures for high-performance polymer light-emitting diodes introducing a solution-processed titanium oxide layer (Invited Paper) [6486-12]

Kim, S. H.; Kim, J. Y.; Park, S. H.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

New Concept for ZnTe-Based Homoepitaxial Light-Emitting Diodes Grown by Molecular Beam Epitaxy

Ueta, A.; Hommel, D.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes [3938-23]

Wang, G.; Ma, X.; Zhang, Y.
2000-01-01

German National Library of Science and Technology (GetInfo) (German)

Monolithic white light emitting diodes with a broad emission spectrum

Dussaigne, A.; Brault, J.; Damilano, B.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

Modelling of Extraction Efficiency of GaN-Based Resonant Cavity Light Emitting Diodes Emitting at 510 nm

Shaw, A.; McCormack, T.; Bradley, A. L.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

MgZnSeTe/ZnCdSe/MgZnCdSe Double Heterostructure Light-Emitting Diodes

Iwata, H.; Naniwae, K.; Yashiki, K.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

Leem, D.-S.; Song, J.-O.; Kwak, J. S.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents [3938-33]

Su, Y. K.; Chen, W. R.; Chang, S.-J.
2000-01-01

German National Library of Science and Technology (GetInfo) (German)

Light-emitting diodes with integrated omnidirectionally reflective contacts [5366-07]

Gessmann, T.; Luo, H.; Xi, J.-Q.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Light-emitting diodes on Si (Invited Paper) [4996-07]

Liang, E.-Z.; Lin, C.-F.; Su, T.-W.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Light-emitting diodes of non-fully conjugated coil-like copolymers for tunable emission and carbon nanotube effect [5739-10]

Bai, S. J.; Wu, C.-C.; Hsu, Y.-L.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Light-emitting diodes based on InP quantum dots in GaP(100) [5739-14]

Hatami, F.; Lordi, V.; Harris, J. S.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Light extraction mechanisms in surface-textured light-emitting diodes [4278-14]

Windisch, R.; Meinlschmidt, S.; Rooman, C.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction temperature in light-emitting diodes assessed by different methods [5739-05]

Chhajed, S.; Xi, Y.; Gessmann, T.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Internal quantum efficiency of AlGaInP microcavity light-emitting diodes [4278-11]

Royo, P.; Stanley, R. P.; Ilegems, M.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes

Dalmasso, S.; Damilano, B.; Pernot, C.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Influence of the injection current on the degradation of white high-brightness light emitting diodes [7617-35]

Bouchard, S.; Lemieux, H.; Cote, M.-P.
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

Kim, K. C.; Choi, Y. C.; Kim, D. H.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes [5366-18]

Stephan, T.; Kohler, K.; Maier, M.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Influence of Electron Tunneling Barriers on the Performance of InGaN-GaN Ultraviolet Light-Emitting Diodes

Kim, K. C.; Choi, Y. C.; Kim, D. H.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

InGaN/GaN multi-quantum dot light-emitting diodes

Ji, L. W.; Su, Y. K.; Chang, S. J.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact

Tamura, K.; Nakahara, K.; Sakai, M.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact

Tamura, K.; Nakahara, K.; Sakai, M.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Improvement of ultradeep ultraviolet light emitting diodes with asymmetric active region [6134-22]

Huang, M.-F.; Lu, T.-H.; SPIE-- the International Society for Optical Engineering
2006-01-01

German National Library of Science and Technology (GetInfo) (German)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H.; Asano, K.; Zhang, B.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Ishikawa, H.; Asano, K.; Zhang, B.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire (Invited Paper) [4996-30]

Khan, M. A.; International Society for Optical Engineering (SPIE)
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

High-power GaN light-emitting diodes with patterned copper substrates by electroplating

Horng, R. H.; Lee, C. E.; Hsu, S. C.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

High-power GaN light-emitting diodes with patterned copper substrates by electroplating

Horng, R. H.; Lee, C. E.; Hsu, S. C.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

High-power AlInGaN light-emitting diodes [4278-19]

Wierer, J. J.; Bhat, J. C.; Chen, C.-H.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

High-efficiency top-emitting microcavity light-emitting diodes

Royo, P.; Carlin, J. F.; Spicher, J.
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

High-efficiency 650-nm thin film light-emitting diodes [4278-08]

Rooman, C.; Windisch, R.; D Hondt, M.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

High-brightness AlGaInP light-emitting diodes using surface texturing [4278-06]

Linder, N.; Kugler, S.; Stauss, P.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

High refractive index nanoparticle-loaded encapsulants for light-emitting diodes [6486-48]

Mont, F. W.; Kim, J. K.; Schubert, M. F.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

High brightness GaN-based light emitting diodes using ITO/n^+-InGaN/InGaN superlattice/n^+-GaN/p-GaN tunneling junction

Lee, S.-H.; Son, H.-K.; Kim, S.-J.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

High brightness GaN-based light emitting diodes using ITO/n^+-InGaN/InGaN superlattice/n^+-GaN/p-GaN tunneling junction

Lee, S.-H.; Son, H.-K.; Kim, S.-J.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application

Chu, C. F.; Cheng, C. C.; Liu, W. H.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile [7231-13]

Zhao, H.; Liu, G.; Li, X.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

GaN-based light-emitting diodes suitable for white light (Invited Paper) [4996-23]

Mukai, T.; Yamada, M.; Mitani, T.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays

Kobayashi, T.; Egawa, S.; Sawada, M.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor

Hao, M.; Ishikawa, H.; Zhang, B.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

GaInN light-emitting diodes with omnidirectional reflectors [4996-20]

Gessmann, T.; Li, Y.-L.; Schubert, E. F.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes [6486-03]

Yu, S.-Q.; Wang, J.-B.; Ding, D.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

From Ultraviolet to Green InGaN-Based Conventional and Resonant-Cavity Light-Emitting Diodes Grown by Molecular Beam Epitaxy

Naranjo, F. B.; Fernandez, S.; Calle, F.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Fabrication of p-side down GaN vertical light emitting diodes on copper substrates by laser lift-off

Chu, J. T.; Kuo, H. C.; Kao, C. C.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Fabrication of high-power AllnGaP-based red light emitting diodes with novel package by electroplating [6486-41]

Chen, K. C.; Su, Y. K.; Huang, J. Q.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes [6134-21]

Yen, S.-H.; Chen, B.-J.; Chen, M.-L.
2006-01-01

German National Library of Science and Technology (GetInfo) (German)

Experimental Characterisation of GaN-Based Resonant Cavity Light Emitting Diodes

Roycroft, B.; Akhter, M.; Maaskant, P.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Enhancement of light extraction efficiency of InGaN quantum well light-emitting diodes with polydimethylsiloxane concave microstructures [7231-30]

Ee, Y.-K.; Kumnorkaew, P.; Tong, H.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Electrically pumped grating-assisted resonant-cavity light-emitting diodes [4641-06]

Delbeke, D.; Sys, C.; Moerman, I.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Electrical and optical characteristics of green light-emitting diodes grown on bulk GaN substrates [7231-32]

Yang, Y.; Cao, X.A.; Yan, C.H.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Efficient light-emitting diodes with radial outcoupling taper at 980- and 630-nm emission wavelength [4278-16]

Schmid, W.; Scherer, M.; Jager, R.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

Efficient InAlGaP light-emitting diodes using radial outcoupling taper [4641-05]

Scherer, M.; Neubert, B.; Schad, S. S.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Efficiency optimization in ionically self-assembled thin film polymer light-emitting diodes [3938-26]

Marciu, D.; Miller, M.; Ritter, A. L.
2000-01-01

German National Library of Science and Technology (GetInfo) (German)

Efficiency enhancement of InGaN/GaN light-emitting diodes utilizing island-like GaN substrate

Hsu, J. T.; Tsay, J. D.; Guo, Y. D.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Efficiency enhancement of InGaN/GaN light-emitting diodes utilizing island-like GaN substrate

Hsu, J. T.; Tsay, J. D.; Guo, Y. D.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Efficiency enhancement in white phosphor-on-cup light-emitting diodes using short wave-pass filters [7617-62]

Cho, S.-H.; Oh, J.R.; Lee, Y.-H.
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Effects of doping parameters on the CIE value of flexible white organic light emitting diodes

Juang, F.-S.; Tsai, Y.-S.; Lin, M.-Y.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Effects of doping parameters on the CIE value of flexible white organic light emitting diodes

Juang, F.-S.; Tsai, Y.-S.; Lin, M.-Y.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off [5739-20]

Chu, J.-T.; Liang, W.-D.; Kao, C.-C.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Disorder in InGaN light-emitting diodes [3938-17]

Pophristic, M.; Lukacs, S. J.; Long, F. H.
2000-01-01

German National Library of Science and Technology (GetInfo) (German)

Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire

Kipshidze, G.; Kuryatkov, V.; Borisov, B.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Decay of lumen and chromaticity of high-power phosphor-converted white-light-emitting diodes in thermal aging (Invited Paper) [7231-23]

Wang, J.-S.; Tsai, C.-C.; Chen, M.-H.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Calculation of the external quantum efficiency of light emitting diodes with different chip designs

Cuong, T. V.; Cheong, H. S.; Hong, C.-H.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Blue light emitting diodes on Si(001) grown by MOVPE

Schulze, F.; Dadgar, A.; Bertram, F.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

Bell-shaped light emitting diodes (BS-LED) with a 45 deg. corner reflector, deep side-wall, and microlens [4641-04]

Park, E.-H.; Kim, J.-H.; Yoo, T.-K.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Beam-shaping properties of InGaN thin-film micro-cavity light-emitting diodes with photonic crystals [7231-11]

Bergenek, K.; Wiesmann, C.; Zull, H.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Angular emission profiles and coherence length measurements of highly efficient low-voltage resonant-cavity light-emitting diodes operating around 650 nm [4278-13]

Gray, J. W.; Oulton, R. F.; Stavrinou, P. N.
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of the wavelength-power performance roll-off in green light emitting diodes

Wetzel, C.; Detchprohm, T.; Li, P.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

AlGaInP light-emitting diodes with omnidirectionally reflecting submount [4996-04]

Gessmann, T.; Schubert, E. F.; Graff, J. W.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates

Nakai, Y.; Nomura, I.; Takashima, Y.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Aging characteristics of II - VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates

Nakai, Y.; Nomura, I.; Takashima, Y.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Accelerated Life Testing of GaN/InGaN/AlGaN Blue Light-Emitting Diodes and High Temperature Failure Mechanism

Osinski, M.; Barton, D. L.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Absorption of guided modes in light-emitting diodes [4996-02]

Schad, S. S.; Neubert, B.; Seyboth, M.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes [7617-16]

Ee, Y.-K.; Li, X.-H.; Biser, J.
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

3D simulation and analysis of AlGaN/GaN ultraviolet light-emitting diodes [5366-33]

Piprek, J.; Katona, T. M.; DenBaars, S. P.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)