p- n junction zinc sulfo-selenide and zinc selenide light-emitting diodes

Kun, Zoltan K.; Robinson, Robert J.
1975-01-01

German National Library of Science and Technology (GetInfo) (German)

p- n junction diodes in InP and In 1−xGa xAs yP 1−y fabricated by beryllium-ion implantation

Armiento, C. A.; Groves, S. H.; Donnelly, J. P.
1979-01-01

German National Library of Science and Technology (GetInfo) (German)

Universal tunneling behavior in technologically relevant P/N junction diodes

Haensch, W. E.; Dokumaci, O.; D’Emic, Chris
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Thermal capacitance spectroscopy of epitaxial 3C and 6H‐SiC pn junction diodes grown side by side on a 6H‐SiC substrate

Saddow, Stephen E.; Neudeck, Philip G.; Dalibor, Thomas
1995-01-01

German National Library of Science and Technology (GetInfo) (German)

Theory and experiments on open circuit voltage decay of p- n junction diodes with arbitrary base width, including the effects of built-in drift field in the base and recombinations in the emitter

Agarwal, S. K.; Ray, U. C.; Jain, S. C.
1982-01-01

German National Library of Science and Technology (GetInfo) (German)

The response of Si p - n junction diodes to proton irradiation

E Simoen; J Vanhellemont; C Claeys
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Xiangping Li; Baolin Zhang; Huichao Zhu
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Study and optimal simulation of 4H—SiC floating junction Schottky barrier diodes' structures and electric properties

Nan Ya-Gong; Pu Hong-Bin; Cao Lin
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Static and low-frequency noise characteristics of n+p junction diodes fabricated in different silicon substrates

E Simoen; J Vanhellemont; A L P Rotondaro
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

Space‐charge‐limited current and capacitance in double‐junction diodes

Grinberg, A. A.; Luryi, Serge
1987-01-01

German National Library of Science and Technology (GetInfo) (German)

Space‐charge‐limited current and capacitance in double‐junction diodes

Grinberg, A. A.; Luryi, Serge
1987-01-01

German National Library of Science and Technology (GetInfo) (German)

Schottky versus bipolar 3.3 kV SiC diodes

A Pérez-Tomás; P Brosselard; J Hassan
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Research on reverse recovery characteristics of SiGeC p-i-n diodes

Gao Yong; Liu Jing; Yang Yuan
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Reduced degradation in In xGa 1−xAs electroluminescent diodes

Ettenberg, M.; Nuese, C. J.
1975-01-01

German National Library of Science and Technology (GetInfo) (German)

Pulsed breakdown of 4 H -SiC Schottky diodes terminated with a boron-implanted p-n junction

Samsonova, T.; Grekhov, I.; Ivanov, P.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Protective coating on the p‐n junction of In0.53Ga0.47As/InP p‐i‐n planar diodes by vacuum‐evaporated glass

Hu, Patrick H‐S.; Seabury, Charles W.; Ota, Yusuke
1987-01-01

German National Library of Science and Technology (GetInfo) (German)

Porous silicon pn junction light emitting diodes

B Das; S P McGinnis
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

Phosphor-Concentration-Dependent Characteristics of White LEDs in Different Current Regulation Modes

Shi, Frank; Lin, Yuan-Chang; He, Yongzhi
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Phase modulation nonlinearity of double-heterostructure p-n junction diode light modulators

Wilson, L. O.; Reinhart, F. K.
1974-01-01

German National Library of Science and Technology (GetInfo) (German)

Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodes

Varker, C. J.; Ravi, K. V.
1974-01-01

German National Library of Science and Technology (GetInfo) (German)

Nonpolar a -plane p -type GaN and p-n Junction Diodes

DenBaars, S. P.; Xing, H.; Craven, M. D.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

New Si planar junction diodes with uniform avalanche multiplication

Nishida, K.; Nakajima, M.; Takekawa, T.
1974-01-01

German National Library of Science and Technology (GetInfo) (German)

Naturally formed graded junction for organic light-emitting diodes

Shao, Yan; Yang, Yang
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Multi-junction cells with monolithic bypass diodes

Sharps, P.R.; Stan, M.A.; Aiken, D.J.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Method for measuring the mean junction temperature of alternating current light-emitting diodes

F S Hwu; C H Yang; J C Chen
2011-01-01

German National Library of Science and Technology (GetInfo) (German)

Mechanism of carrier transport across the junction of narrow band-gap planar n +p HgCdTe photodiodes grown by liquid-phase epitaxy

Lukomsky, I.; Zemel, A.; Weiss, E.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Measurement of the junction temperature in high-power light-emitting diodes from the high-energy wing of the electroluminescence band

Vaitonis, Z.; Vitta, P.; Zˇukauskas, A.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics

Ryu, Han-Youl; Park, Yong-Jo; Ha, Kyoung-Ho
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Magnetic field influence on detection properties of planar microwave diodes on the base of modulation doped semiconductor structures

Sužiedelis, A; Ašmontas, S; Požela, J
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Lifetime of nonequilibrium charge carriers in the base of p - n -junction semiconductor diode at arbitrary injection levels

Aramyan, N.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

Xi, Y.; Schubert, E. F.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction temperature measurements in reverse‐biased PIN diodes

Leifer, Mark C.
1994-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction temperature in light-emitting diodes assessed by different methods [5739-05]

Chhajed, S.; Xi, Y.; Gessmann, T.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction recombination current in abrupt junction diodes under forward bias

Green, Martin A.; Corkish, Richard
1996-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction migration in PbTe-PbSnTe heterostructures

Oron, M.; Rotter, S.; Eger, D.
1981-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction leakage in titanium self‐aligned silicide devices

Amano, Jun; Scott, M. P.; Tsai, Rick
1986-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

Redfern, D.; Musca, C.; Bajaj, J.
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction characteristics of electron-irradiated Ga0.5In0.5Pn+-p diodes and solar cells

Ostdiek, P. H.; Yeo, Y. K.; Hengehold, R. L.
1997-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction characteristics of Al-Al 2O 3-CdS diodes fabricated by molecular beam epitaxy

Tsang, W.M.; Cameron, D. C.; Duncan, W.
1979-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Gessmann, Th.; Bogart, K. H. A.; Shah, J. M.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Li, Y.; Wetzel, C.; Plawsky, J.L.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Ion channelling analysis of pre-amorphised silicon diodes using a nuclear microprobe

J Thornton; K C Paus
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

Injection electroluminescence in phosphorous-ion-implanted ZnSe p-n junction diodes

Shin, B. K.; Park, Y. S.
1974-01-01

German National Library of Science and Technology (GetInfo) (German)

Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes

Zhang, J. C.; Zhu, Y. H.; Egawa, T.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes

Schubert, E. F.; Li, Y.-L.; Chhajed, S.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Improved Contacts to p-type ZnSe Using a ZnTe/Ga~2Se~3 Contact Layer and Related p-n Junction Diode Structures

Yoshida, T.; Kobayashi, M.; Yoshikawa, A.
1996-01-01

German National Library of Science and Technology (GetInfo) (German)

Impedance analysis: A powerful method for the determination of the doping concentration and built-in potential of nonideal semiconductor p-n diodes

Aberle, A. G.; Bardos, R. A.; Sproul, A. B.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Impact of the substrate on the low‐frequency noise of silicon n+p junction diodes

Vanhellemont, J.; Claeys, C.; Simoen, E.
1995-01-01

German National Library of Science and Technology (GetInfo) (German)

High‐voltage 6H‐SiC p‐n junction diodes

Salupo, C. S.; Matus, L. G.; Powell, J. A.
1991-01-01

German National Library of Science and Technology (GetInfo) (German)

High‐field fast‐risetime pulse failures in 4H‐ and 6H‐SiC pn junction diodes

Fazi, Christian; Neudeck, Philip G.
1996-01-01

German National Library of Science and Technology (GetInfo) (German)

High-voltage (900 V) 4 H -SiC Schottky diodes with a boron-implanted guard p-n junction

Ivanov, P.; Potapov, A.; Samsonova, T.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Ghandi, R.; Buono, B.; Domeij, M.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

High performance germanium N+/P and P+/N junction diodes formed at low Temperature (≤380 °C) using metal-induced dopant activation

Park, Jin-Hong; Kuzum, Duygu; Tada, Munehiro
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

High energy particle irradiation effects on the low‐frequency noise of Czochralski silicon junction diodes

Vanhellemont, J.; Ohyama, H.; Claeys, C.
1996-01-01

German National Library of Science and Technology (GetInfo) (German)

High brightness GaN-based light emitting diodes using ITO/n^+-InGaN/InGaN superlattice/n^+-GaN/p-GaN tunneling junction

Lee, S.-H.; Son, H.-K.; Kim, S.-J.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

High brightness GaN-based light emitting diodes using ITO/n^+-InGaN/InGaN superlattice/n^+-GaN/p-GaN tunneling junction

Lee, S.-H.; Son, H.-K.; Kim, S.-J.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

Musca, C.; Antoszewski, J.; Rais, M.
2000-01-01

German National Library of Science and Technology (GetInfo) (German)

Heterostructure p‐n junction tunnel diodes

Eckstein, J. N.; Day, D. J.; Chung, Y.
1990-01-01

German National Library of Science and Technology (GetInfo) (German)

Growth and Characterization of a p-n Junction Diode Made of Cubic GaN

Tanaka, H.; Nakadaira, A.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Fundamental Effects in the Dependence of the 1/ f Noise Spectrum on the Bias Current in Semiconductor Diodes

Yakimov, A. V.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

K Jandieri; S D Baranovskii; W Stolz
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes

Williams, J.; Sheridan, D.; Isaacs-Smith, T.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask

Seiler, J.; Li, C.; Losee, P.
2005-01-01

German National Library of Science and Technology (GetInfo) (German)

Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes

Shah, Jay M.; Schubert, E. F.; Li, Y.-L.
2003-01-01

German National Library of Science and Technology (GetInfo) (German)

Experimental 4 H -SiC junction-barrier Schottky (JBS) diodes

Ivanov, P.; Kon’kov, O.; Samsonova, T.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes

Belyaev, A E; Basanets, V V; Boltovets, N S
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Estimating junction temperature of high-flux white LEDs (Invited Paper) [5366-23]

Narendran, N.; Gu, Y.; Hosseinzadeh, R.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Electroluminescence in Br-, Cl-, and Zn-implanted CuInSe 2p- n junction diodes

Yu, Phil Won; Grant, J. T.; Park, Y. S.
1976-01-01

German National Library of Science and Technology (GetInfo) (German)

Electroluminescence and photovoltaic detection in Cd-implanted CuInSe 2p- n junction diodes

Ehret, J. E.; Faile, S. P.; Yu, Phil Won
1975-01-01

German National Library of Science and Technology (GetInfo) (German)

Electrical properties of ion‐implanted p‐n junction diodes in β‐SiC

Das, K.; Edmond, J. A.; Davis, R. F.
1988-01-01

German National Library of Science and Technology (GetInfo) (German)

Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy

Cooper, J. A.; Melloch, M. R.; McDermott, B. T.
1991-01-01

German National Library of Science and Technology (GetInfo) (German)

Electrical characteristics of magnesium-doped gallium nitride junction diodes

Bhat, I. B.; Chow, T. P.; Lu, H.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Electrical characteristics of epitaxial pn junction diodes fabricated on germanium‐boron‐doped silicon

Ang, S. S.
1995-01-01

German National Library of Science and Technology (GetInfo) (German)

Electric field distribution in the base of semiconductor p-n junction diode

Aramyan, N.
2007-01-01

German National Library of Science and Technology (GetInfo) (German)

Effect of mechanical stress on current‐voltage characteristics of thin film polycrystalline diamond Schottky diodes

Popovici, G.; Stacy, T.; Prelas, M.
1993-01-01

German National Library of Science and Technology (GetInfo) (German)

Double-junction effect in proton-irradiated silicon diodes

Polenta, L.; Nava, F.; Castaldini, A.
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Diffusion length determination in p- n junction diodes and solar cells

Chamberlain, S. G.; Arora, N. D.; Roulston, D. J.
1980-01-01

German National Library of Science and Technology (GetInfo) (German)

Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement

Hwang, W. J.; Lee, T. H.; Kim, L.
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Deep defect levels in diode structures based on gallium phosphide

Bocharova, I.; Malyshev, S.
2006-01-01

German National Library of Science and Technology (GetInfo) (German)

Current transients in almost-ideal Czochralski silicon p-n junction diodes

Simoen, E.; Poyai, A.; Claeys, C.
1999-01-01

German National Library of Science and Technology (GetInfo) (German)

Complete collection of minority carriers from the inversion layer in induced junction diodes

Schaefer, A. Russell; Geist, Jon; Liang, Eli
1981-01-01

German National Library of Science and Technology (GetInfo) (German)

Comparison of bipolar and unipolar ionic diodes

Gael Nguyen; Ivan Vlassiouk; Zuzanna S Siwy
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Comparison between models for p-n junctions parameters extraction

Boudinov, H.; Pesenti, G.C.
2009-01-01

German National Library of Science and Technology (GetInfo) (German)

Centers at junction boundaries in AlGaAs single heterojunction red light‐emitting diodes

Gomez, A.; Mun˜oz, E; Calleja, E.
1986-01-01

German National Library of Science and Technology (GetInfo) (German)

Cathodoluminescence study of GaN-based film structures

Jahn, U.; Zhu, J.; Liu, Z.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Behavior of ion‐implanted junction diodes in 3C SiC

Avila, R. E.; Fung, C. D.; Kopanski, J. J.
1987-01-01

German National Library of Science and Technology (GetInfo) (German)

Automatic measurement system for junction temperature of light emitting diodes

Kuo, C L; Lin, D Y
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Application of PN junction diodes to the measurement of dose distribution of high energy radiation

M A Trump; A P Pinkerton
2002-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of thermal properties of GaInN light-emitting diodes and laser diodes

Shan, Qifeng; Dai, Qi; Chhajed, Sameer
2010-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

T T Mnatsakanov; M E Levinshtein; P A Ivanov
2004-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of nonideal Schottky and p‐n junction diodes-Extraction of parameters from I-V plots

Eizenberg, M.; Zaharia, R.; Lyakas, M.
1995-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

Sellai, A.; Ouennoughi, Z.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

Sellai, A.; Ouennoughi, Z.
2008-01-01

German National Library of Science and Technology (GetInfo) (German)

Analysis of current-voltage characteristics of organic light emitting diodes having a LiF/Al cathode and an Al-hydroxyquinoline/diamine junction

Matsumura, Michio; Jinde, Yukitoshi
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

An extension of the model for the extracurrent in almost ideal silicon junction diodes

Cerofolini, G. F.; Polignano, M. L.
1984-01-01

German National Library of Science and Technology (GetInfo) (German)

Al + and B + implantations into 6H-SiC epilayers and application to pn junction diodes

Takemura, O.; Inoue, M.; Nakata, T.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

Accurate extraction of the diffusion current in silicon p-n junction diodes

Claeys, C.; Katcki, J.; Simoen, E.
1998-01-01

German National Library of Science and Technology (GetInfo) (German)

4H-SiC junction-barrier Schottky diodes with high forward current densities

Kiyoshi Tone; Jian H Zhao; Maurice Weiner
2001-01-01

German National Library of Science and Technology (GetInfo) (German)

3C‐SiC p‐n junction diodes

Shigeta, M.; Nakajima, S.; Uemoto, A.
1986-01-01

German National Library of Science and Technology (GetInfo) (German)

2000 V 6H‐SiC p‐n junction diodes grown by chemical vapor deposition

Neudeck, Philip G.; Powell, J. Anthony; Larkin, David J.
1994-01-01

German National Library of Science and Technology (GetInfo) (German)