WorldWideScience

Sample records for multiple dielectric layers

  1. Monochromatic filter with multiple manipulation approaches by the layered all-dielectric patch array

    International Nuclear Information System (INIS)

    Liu, Xiaoshan; Liu, Guiqiang; Fu, Guolan; Liu, Mulin; Liu, Zhengqi

    2016-01-01

    Monochromatic filtering with ultra-narrowband and high spectral contrast is desirable for wide applications in display, image, and other optoelectronics. However, owing to the inherent omhic losses in the metallic materials, a broadband spectrum with a low Q-factor down to 10 inevitably limits the device performance. Herein, we for the first time theoretically propose and demonstrate an ultra-narrowband color-filtering platform based on the layered all-dielectric meta-material (LADM), which consists of a triple-layer high/low/high-index dielectrics cavity structure. Owing to the lossless dielectric materials used, sharp resonances with the bandwidth down to sub-10 nm are observed in the sub-wavelength LADM-based filters. A spectral Q-factor of 361.6 is achieved, which is orders of magnitude larger than that of the plasmonic resonators. Moreover, for the other significant factor for evaluation of filtering performance, the spectral contrast reaches 94.5%. These optical properties are the main results of the excitation of the resonant modes in the LADMs. Furthermore, polarization-manipulated light filtering is realized in this LADM. The classical Malus law is also confirmed in the reflective spectrum by tuning the polarization state. More interestingly and importantly, the filtering phenomenon shows novel features of the wavelength-independent and tunable resonant intensity for the reflective spectrum when the LADM-based filter is illuminated under an oblique state. High scalability of the sharp reflective spectrum is obtained by tuning the structural parameters. A single-wavelength reflective filtering window is also achieved in the visible frequencies. These features hold promise for the LADM-based filter with wide applications in color engineering, displaying, imaging, etc. (paper)

  2. Wave propagation through a dielectric layer containing densely packed fibers

    International Nuclear Information System (INIS)

    Lee, Siu-Chun

    2011-01-01

    This paper presents the theoretical formulation for the propagation of electromagnetic wave through a dielectric layer containing a random dense distribution of fibers. The diameter of the fibers is comparable to the inter-fiber spacing and wavelength of the incident radiation, but is much smaller than the thickness of the layer. Discontinuity of refractive index across the boundaries of the dielectric layer resulted in multiple internal reflection of both the primary source wave and the scattered waves. As a result the incident waves on the fibers consist of the multiply-reflected primary waves, scattered waves from other fibers, and scattered-reflected waves from the boundaries. The effective propagation constant of the dielectric fiber layer was developed by utilizing the Effective field-Quasicrystalline approximation. The influence of the refractive index of the dielectric medium on the radiative properties of a dense fiber layer was examined by means of numerical analyses.

  3. High thermal conductivity lossy dielectric using a multi layer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  4. Method of forming a nanocluster comprising dielectric layer and device comprising such a layer

    NARCIS (Netherlands)

    2009-01-01

    A method of forming a dielectric layer (330) on a further layer (114, 320) of a semiconductor device (300) is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer (114, 320), the dielectric precursor compound comprising a

  5. Encapsulation methods and dielectric layers for organic electrical devices

    Science.gov (United States)

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  6. Multiple Temporalities, Layered Histories

    Directory of Open Access Journals (Sweden)

    Steven Pearson

    2017-11-01

    Full Text Available In Quotational Practices: Repeating the Future in Contemporary Art, Patrick Greaney asserts, “the past matters not only because of what actually happened but also because of the possibilities that were not realized and that still could be. Quotation evokes those possibilities. By repeating the past, artists and writers may be attempting to repeat that past’s unrealized futures.”[1]  In the information age, the Internet, for instance, provides us an expanded collection of visual information—quite literally available at our fingertips—summoning together aspects of the past and possibilities of the future into a boundless present. Sketchbook Revisions (2014–2015, a series of mixed-media paintings, represents my attempt to communicate the ways in which I experience my contemporary moment constructed from multiple temporalities excavated from my past. This body of work combines fragments of representational paintings created between 1995 and 2003 and nonrepresentational renderings produced between 2003 and 2014. Using traditional tracing paper and graphic color, I randomly select moments of my previous work to transfer and layer over selected areas of already-filled pages of a sketchbook I used from 2003 to 2004. These sketches depict objects I encountered in studio art classrooms and iconic architecture on the campus of McDaniel College, and often incorporate teaching notes. The final renditions of fragmented and layered histories enact the ways that we collectively experience multiple temporalities in the present. Quoting my various bodies of work, Sketchbook Revisions challenges both material and conceptual boundaries that determine fixed notions of artistic identity.

  7. Atomic layer deposition of dielectrics for carbon-based electronics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J., E-mail: jiyoung.kim@utdallas.edu; Jandhyala, S.

    2013-11-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics.

  8. Atomic layer deposition of dielectrics for carbon-based electronics

    International Nuclear Information System (INIS)

    Kim, J.; Jandhyala, S.

    2013-01-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics

  9. Improvement in photoconductor film properties by changing dielectric layer structures

    International Nuclear Information System (INIS)

    Kim, S; Oh, K; Lee, Y; Jung, J; Cho, G; Jang, G; Cha, B; Nam, S; Park, J

    2011-01-01

    In recent times, digital X-ray detectors have been actively applied to the medical field; for example, digital radiography offers the potential of improved image quality and provides opportunities for advances in medical image management, computer-aided diagnosis and teleradiology. In this study, two candidate materials (HgI 2 and PbI 2 ) have been employed to study the influence of the dielectric structure on the performance of fabricated X-ray photoconducting films. Parylene C with high permittivity was deposited as a dielectric layer using a parylene deposition system (PDS 2060). The structural and morphological properties of the samples were evaluated field emission scanning electron microscopy and X-ray diffraction. Further, to investigate improvements in the electrical characteristics, a dark current in the dark room and sensitivity to X-ray exposure in the energy range of general radiography diagnosis were measured across the range of the operating voltage. The electric signals varied with the dielectric layer structure of the X-ray films. The PbI 2 film with a bottom dielectric layer showed optimized electric properties. On the other hand, in the case of HgI 2 , the film with a top dielectric layer showed superior electric characteristics. Further, although the sensitivity of the film decreased, the total electrical efficiency of the film improved as a result of the decrease in dark current. When a dielectric layer is deposited on a photoconductor, the properties of the photoconductor, such as hole-electron mobility, should be considered to improve the image quality in digital medical imaging application. In this study, we have thus demonstrated that the use of dielectric layer structures improves the performance of photoconductors.

  10. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  11. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.; Caraveo-Frescas, J. A.; Cha, D. K.

    2010-01-01

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  12. Real-time Java simulations of multiple interference dielectric filters

    Science.gov (United States)

    Kireev, Alexandre N.; Martin, Olivier J. F.

    2008-12-01

    An interactive Java applet for real-time simulation and visualization of the transmittance properties of multiple interference dielectric filters is presented. The most commonly used interference filters as well as the state-of-the-art ones are embedded in this platform-independent applet which can serve research and education purposes. The Transmittance applet can be freely downloaded from the site http://cpc.cs.qub.ac.uk. Program summaryProgram title: Transmittance Catalogue identifier: AEBQ_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEBQ_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 5778 No. of bytes in distributed program, including test data, etc.: 90 474 Distribution format: tar.gz Programming language: Java Computer: Developed on PC-Pentium platform Operating system: Any Java-enabled OS. Applet was tested on Windows ME, XP, Sun Solaris, Mac OS RAM: Variable Classification: 18 Nature of problem: Sophisticated wavelength selective multiple interference filters can include some tens or even hundreds of dielectric layers. The spectral response of such a stack is not obvious. On the other hand, there is a strong demand from application designers and students to get a quick insight into the properties of a given filter. Solution method: A Java applet was developed for the computation and the visualization of the transmittance of multilayer interference filters. It is simple to use and the embedded filter library can serve educational purposes. Also, its ability to handle complex structures will be appreciated as a useful research and development tool. Running time: Real-time simulations

  13. Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

    2015-01-01

    In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

  14. Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

    NARCIS (Netherlands)

    Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

    1996-01-01

    Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

  15. Hidden symmetries in N-layer dielectric stacks

    Science.gov (United States)

    Liu, Haihao; Shoufie Ukhtary, M.; Saito, Riichiro

    2017-11-01

    The optical properties of a multilayer system with arbitrary N layers of dielectric media are investigated. Each layer is one of two dielectric media, with a thickness one-quarter the wavelength of light in that medium, corresponding to a central frequency f 0. Using the transfer matrix method, the transmittance T is calculated for all possible 2 N sequences for small N. Unexpectedly, it is found that instead of 2 N different values of T at f 0 (T 0), there are only (N/2+1) discrete values of T 0, for even N, and (N + 1) for odd N. We explain this high degeneracy in T 0 values by finding symmetry operations on the sequences that do not change T 0. Analytical formulae were derived for the T 0 values and their degeneracies as functions of N and an integer parameter for each sequence we call ‘charge’. Additionally, the bandwidth at f 0 and filter response of the transmission spectra are investigated, revealing asymptotic behavior at large N.

  16. Transition from single to multiple double layers

    International Nuclear Information System (INIS)

    Chan, C.; Hershkowitz, N.

    1982-01-01

    It is shown that laboratory double layers become multiple double layers when the ratio of Debye length to system length is decreased. This result exhibits characteristics described by boundary layer theory

  17. Light transmission coefficients by subwavelength aluminum gratings with dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L. M., E-mail: lev39blinov@gmail.com; Lazarev, V. V.; Yudin, S. G.; Artemov, V. V.; Palto, S. P.; Gorkunov, M. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Crystallography and Photonics Federal Research Center) (Russian Federation)

    2016-11-15

    Spectral positions of plasmon resonances related to boundaries between a thin aluminum layer and dielectrics (air, glass, VDF–TrFE 65/35 ferroelectric copolymer, and indium tin oxide (ITO)) have been determined in the transmission spectra of aluminum gratings of three types with 30 × 30 μm{sup 2} dimensions and 350-, 400-, and 450-nm line periods. Experimental results agree well with spectral positions of plasmon resonances calculated for the normal incidence of TM-polarized light. In addition, maximum values of transmission coefficients in the region of λ ≈ 900–950 nm have been determined for glass–Al–copolymer and glass–ITO–Al–copolymer structures. These values are close to 100%, which shows that the effective optical aperture is two times greater than the geometric areas of slits.

  18. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  19. Multiple orbital angular momentum generated by dielectric hybrid phase element

    Science.gov (United States)

    Wang, Xuewen; Kuchmizhak, Aleksandr; Hu, Dejiao; Li, Xiangping

    2017-09-01

    Vortex beam carrying multiple orbital angular momentum provides a new degree of freedom to manipulate light leading to the various exciting applications as trapping, quantum optics, information multiplexing, etc. Helical wavefront can be generated either via the geometric or the dynamic phase arising from a space-variant birefringence (q-plate) or from phase accumulation through propagation (spiral-phase-plate), respectively. Using fast direct laser writing technique we fabricate and characterize novel hybrid q-plate generating vortex beam simultaneously carrying two different high-order topological charges, which arise from the spin-orbital conversion and the azimuthal height variation of the recorded structures. We approve the versatile concept to generate multiple-OAM vortex beams combining the spin-orbital interaction and the phase accumulation in a single micro-scale device, a hybrid dielectric phase plate.

  20. Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

    Science.gov (United States)

    Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

    2009-09-07

    We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

  1. HTS microstrip disk resonator with an upper dielectric layer for 4GHz

    International Nuclear Information System (INIS)

    Yamanaka, Kazunori; Kai, Manabu; Akasegawa, Akihiko; Nakanishi, Teru

    2006-01-01

    We propose HTS microstrip disk resonator with an upper dielectric layer as a candidate resonator structure of HTS compact power filter for 4GHz band. The electromagnetic simulations on the upper dielectric layer examined the current distributions of the HTS resonators that had TM 11 mode resonance of about 4 GHz. By the simulations, it is evaluated that of the maximum current density near the end portion of the disk-shape pattern of the resonator with the thick upper-layered structure decreases by roughly 30-50 percent, as compared with that of the resonator without it. Then, we designed and fabricated the resonator samples with and without the upper dielectrics. The RF power measurement results indicated that the upper dielectric layer leads to an increase in handling power

  2. Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

    International Nuclear Information System (INIS)

    Park, Kyoung-Seok; Ko, Pil-Seok; Kim, Sam-Dong

    2014-01-01

    Effects of the N 2 O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer-dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 °C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N 2 O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT. - Highlights: • Perhydropolysilazane (PHPS) layer is evaluated as a Si interlayer dielectric. • Examine effects of the N 2 O plasma treatment (PT) on PHPS spin-on-dielectrics (SODs) • Significantly improved metal contact resistances are achieved using the N 2 O PT. • Contact resistance enhancement by PT is due to the minimized carbon contamination

  3. Field Enhancement in a Grounded Dielectric Slab by Using a Single Superstrate Layer

    OpenAIRE

    Valagiannopoulos, Constantinos A.; Tsitsas, Nikolaos L.

    2012-01-01

    The addition of a dielectric layer on a slab configuration is frequently utilized in various electromagnetic devices in order to give them certain desired operational characteristics. In this work, we consider a grounded dielectric film-slab, which is externally excited by a normally-incident Gaussian beam. On top of the film-slab, we use an additional suitably selected single isotropic superstrate layer in order to increase the field concentration inside the slab and hence achieve optimal po...

  4. High Gain and High Directive of Antenna Arrays Utilizing Dielectric Layer on Bismuth Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    F. H. Wee

    2012-01-01

    Full Text Available A high gain and high directive microstrip patch array antenna formed from dielectric layer stacked on bismuth titanate (BiT ceramics have been investigated, fabricated, and measured. The antennas are designed and constructed with a combination of two-, four-, and six-BiT elements in an array form application on microwave substrate. For gain and directivity enhancement, a layer of dielectric was stacked on the BiT antenna array. We measured the gain and directivity of BiT array antennas with and without the dielectric layer and found that the gain of BiT array antenna with the dielectric layer was enhanced by about 1.4 dBi of directivity and 1.3 dB of gain over the one without the dielectric layer at 2.3 GHz. The impedance bandwidth of the BiT array antenna both with and without the dielectric layer is about 500 MHz and 350 MHz, respectively, which is suitable for the application of the WiMAX 2.3 GHz system. The utilization of BiT ceramics that covers about 90% of antenna led to high radiation efficiency, and small-size antennas were produced. In order to validate the proposed design, theoretical and measured results are provided and discussed.

  5. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer

    Directory of Open Access Journals (Sweden)

    Shijiao Han

    2016-07-01

    Full Text Available To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs, a polar polymer layer was inserted between two polymethyl methacrylate (PMMA dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol (PVA or poly(4-vinylphenol (PVP containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one, and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type. The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

  6. Electromagnetic Scattering from a PEC Wedge Capped with Cylindrical Layers with Dielectric and Conductive Properties

    Directory of Open Access Journals (Sweden)

    H. Ozturk

    2017-04-01

    Full Text Available Electromagnetic scattering from a layered capped wedge is studied. The wedge is assumed infinite in z-direction (longitudinal and capped with arbitrary layers of dielectric with varying thicknesses and dielectric properties including conductive loss. Scalar Helmholtz equation in two dimensions is formulated for each solution region and a matrix of unknown coefficients are arrived at for electric field representation. Closed form expressions are derived for 2- and 3-layer geometries. Numerical simulations are performed for different wedge shapes and dielectric layer properties and compared to PEC-only case. It has been shown that significant reduction in scattered electric field can be obtained with 2- and 3-layered cap geometries. Total electric field in the far field normalized to incident field is also computed as a precursor to RCS analysis. Analytical results can be useful in radar cross section analysis for aerial vehicles.

  7. Contribution of Dielectric Screening to the Total Capacitance of Few-Layer Graphene Electrodes.

    Science.gov (United States)

    Zhan, Cheng; Jiang, De-en

    2016-03-03

    We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (CQ) and EDL capacitance (CEDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (CDielec). We find that CDielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is more than three. Our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes.

  8. Multiple Layers of Credit and Mortgage Crises

    OpenAIRE

    Paula Hernandez-Verme

    2011-01-01

    I examine a production economy with a financial sector that contains multiple layers of credit. Such layers are designed to constitute credit chains which are inclusive of a simple mortgage market. The focus is on the nature and contagion properties of credit chains in an economy where the financial sector plays a real allocative role and agents have a nontrivial choice of whether to default on mortgages or not. Multiple equilibria with different rates of default are observed, due to the pres...

  9. Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

    KAUST Repository

    Wu, Di

    2015-11-17

    © 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

  10. Analytical solutions of nonlocal Poisson dielectric models with multiple point charges inside a dielectric sphere

    Science.gov (United States)

    Xie, Dexuan; Volkmer, Hans W.; Ying, Jinyong

    2016-04-01

    The nonlocal dielectric approach has led to new models and solvers for predicting electrostatics of proteins (or other biomolecules), but how to validate and compare them remains a challenge. To promote such a study, in this paper, two typical nonlocal dielectric models are revisited. Their analytical solutions are then found in the expressions of simple series for a dielectric sphere containing any number of point charges. As a special case, the analytical solution of the corresponding Poisson dielectric model is also derived in simple series, which significantly improves the well known Kirkwood's double series expansion. Furthermore, a convolution of one nonlocal dielectric solution with a commonly used nonlocal kernel function is obtained, along with the reaction parts of these local and nonlocal solutions. To turn these new series solutions into a valuable research tool, they are programed as a free fortran software package, which can input point charge data directly from a protein data bank file. Consequently, different validation tests can be quickly done on different proteins. Finally, a test example for a protein with 488 atomic charges is reported to demonstrate the differences between the local and nonlocal models as well as the importance of using the reaction parts to develop local and nonlocal dielectric solvers.

  11. Large energy storage efficiency of the dielectric layer of graphene nanocapacitors.

    Science.gov (United States)

    Bezryadin, A; Belkin, A; Ilin, E; Pak, M; Colla, Eugene V; Hubler, A

    2017-12-08

    Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al 2 O 3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm -1 (i.e., 1 GV m -1 ), which is much larger than the table value of the Al 2 O 3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

  12. Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

    Science.gov (United States)

    Bezryadin, A.; Belkin, A.; Ilin, E.; Pak, M.; Colla, Eugene V.; Hubler, A.

    2017-12-01

    Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al2O3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm-1 (i.e., 1 GV m-1), which is much larger than the table value of the Al2O3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

  13. Stop Band Gap in Periodic Layers of Confined Atomic Vapor/Dielectric Medium

    International Nuclear Information System (INIS)

    Li Yuan-Yuan; Li Li; Lu Yi-Xin; Zhang Yan-Peng; Xu Ke-Wei

    2013-01-01

    A stop band gap is predicted in periodic layers of a confined atomic vapor/dielectric medium. Reflection and transmission profile of the layers over the band gap can be dramatically modified by the confined atoms and the number of layer periods. These gap and line features can be ascribed to the enhanced contribution of slow atoms induced by atom-wall collision, transient behavior of atom-light interaction and Fabry—Pérot effects in a thermal confined atomic system

  14. Perhydropolysilazane spin-on dielectrics for inter-layer-dielectric applications of sub-30 nm silicon technology

    International Nuclear Information System (INIS)

    Kim, Sam-Dong; Ko, Pil-Seok; Park, Kyoung-Seok

    2013-01-01

    Various material properties of the perhydropolysilazane spin-on dielectric (PHPS SOD) were examined and analyzed in this study as potential inter-layer dielectrics (ILDs) integrated for Si circuits of 30 nm technology or beyond. The spin-coated PHPS (18.5 wt%) layers converted at 650 °C showed comparable but less perfect thermal conversion to silica than the films converted at 1000 °C, however exhibiting excellent gap filling (15 nm gap opening, aspect ratio (AR) of ∼23) and planarization (degree of planarization (DOP) = ∼73% for 800 nm initial step height, cusp angle = ∼16°) sufficient for the Si integration. PHPS SOD layers cured at 650 °C were integrated ILDs in the 0.18 µm Si front-end-of-the-line process, and the estimated hot-carrier reliability of n-channel metal oxide semiconductor transistors (ten years at a drain voltage of 1.68 V) had no significant difference from that of the transistors integrated with the conventional borophosposilicate glass ILDs. A modified contact pre-cleaning scheme using N 2 O plasma treatment also produced uniform and stable contact chain resistances from the SOD ILDs. (paper)

  15. Retinal layer segmentation in multiple sclerosis

    DEFF Research Database (Denmark)

    Petzold, Axel; Balcer, Laura J; Calabresi, Peter A

    2017-01-01

    BACKGROUND: Structural retinal imaging biomarkers are important for early recognition and monitoring of inflammation and neurodegeneration in multiple sclerosis. With the introduction of spectral domain optical coherence tomography (SD-OCT), supervised automated segmentation of individual retinal...... layers is possible. We aimed to investigate which retinal layers show atrophy associated with neurodegeneration in multiple sclerosis when measured with SD-OCT. METHODS: In this systematic review and meta-analysis, we searched for studies in which SD-OCT was used to look at the retina in people...... with multiple sclerosis with or without optic neuritis in PubMed, Web of Science, and Google Scholar between Nov 22, 1991, and April 19, 2016. Data were taken from cross-sectional cohorts and from one timepoint from longitudinal studies (at least 3 months after onset in studies of optic neuritis). We classified...

  16. Arsenic sulfide layers for dielectric reflection mirrors prepared from solution

    Science.gov (United States)

    Matějec, Vlastimil; Pedlikova, Jitka; BartoÅ, Ivo; Podrazký, Ondřej

    2017-12-01

    Chalcogenide materials due to high refractive indices, transparency in the mid-IR spectral region, nonlinear refractive indices, etc, have been employed as fibers and films in different photonic devices such as light amplifiers, optical regenerators, broadband radiation sources. Chalcogenide films can be prepared by physical methods as well as by solution-based techniques in which solutions of chalcogenides in amines are used. This paper presents results on the solution-based fabrication and optical characterization of single arsenic sulfide layers and multilayer stacks containing As2S3 layers together with porous silica layers coated on planar and fiber-optic substrates. Input As2S3 solutions for the layer fabrications were prepared by dissolving As2S3 powder in n-propylamine in a concentration of 0.50 mol/l. These solutions were applied on glass slides by dip-coating method and obtained layers were thermally treated in vacuum at temperatures up to 180 °C. Similar procedure was used for As2S3 layers in multilayer stacks. Such stacks were fabricated by repeating the application of one porous silica layer prepared by the sol-gel method and one As2S3 layer onto glass slides or silica fibers (a diameter of 0.3 mm) by using the dip-coating method. It has been found that the curing process of the applied layers has to be carefully controlled in order to obtain stacks with three pairs of such layers. Single arsenic and porous silica layers were characterized by optical microscopy, and by measuring their transmission spectra in a range of 200-2500 nm. Thicknesses and refractive indices were estimated from the spectra. Transmission spectra of planar multilayer stacks were measured, too. Interference bands have been determined from optical measurements on the multilayer stacks with a minimum transmittance of about 50% which indicates the possibility of using such stacks as reflecting mirrors.

  17. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    NARCIS (Netherlands)

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  18. Control of Evaporation Behavior of an Inkjet-Printed Dielectric Layer Using a Mixed-Solvent System

    Science.gov (United States)

    Yang, Hak Soon; Kang, Byung Ju; Oh, Je Hoon

    2016-01-01

    In this study, the evaporation behavior and the resulting morphology of inkjet-printed dielectric layers were controlled using a mixed-solvent system to fabricate uniform poly-4-vinylphenol (PVP) dielectric layers without any pinholes. The mixed-solvent system consisted of two different organic solvents: 1-hexanol and ethanol. The effects of inkjet-printing variables such as overlap condition, substrate temperature, and different printing sequences (continuous and interlacing printing methods) on the inkjet-printed dielectric layer were also investigated. Increasing volume fraction of ethanol (VFE) is likely to reduce the evaporation rate gradient and the drying time of the inkjet-printed dielectric layer; this diminishes the coffee stain effect and thereby improves the uniformity of the inkjet-printed dielectric layer. However, the coffee stain effect becomes more severe with an increase in the substrate temperature due to the enhanced outward convective flow. The overlap condition has little effect on the evaporation behavior of the printed dielectric layer. In addition, the interlacing printing method results in either a stronger coffee stain effect or wavy structures of the dielectric layers depending on the VFE of the PVP solution. All-inkjet-printed capacitors without electrical short circuiting can be successfully fabricated using the optimized PVP solution (VFE = 0.6); this indicates that the mixed-solvent system is expected to play an important role in the fabrication of high-quality inkjet-printed dielectric layers in various printed electronics applications.

  19. Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell

    NARCIS (Netherlands)

    2014-01-01

    We will describe a solar cell with a Dielektrikumdoppelschicht and a method for their preparation. It comprises a first dielectric layer (3) containing aluminum oxide or consisting of alumina, and a second, hydrogen-containing dielectric layer (5) is produced by sequential vapor deposition, whereby

  20. Zinc oxide nanowire-poly(methyl methacrylate) dielectric layers for polymer capacitive pressure sensors.

    Science.gov (United States)

    Chen, Yan-Sheng; Hsieh, Gen-Wen; Chen, Shih-Ping; Tseng, Pin-Yen; Wang, Cheng-Wei

    2015-01-14

    Polymer capacitive pressure sensors based on a dielectric composite layer of zinc oxide nanowire and poly(methyl methacrylate) show pressure sensitivity in the range of 2.63 × 10(-3) to 9.95 × 10(-3) cm(2) gf(-1). This represents an increase of capacitance change by as much as a factor of 23 over pristine polymer devices. An ultralight load of only 10 mg (corresponding to an applied pressure of ∼0.01 gf cm(-2)) can be clearly recognized, demonstrating remarkable characteristics of these nanowire-polymer capacitive pressure sensors. In addition, optical transmittance of the dielectric composite layer is approximately 90% in the visible wavelength region. Their low processing temperature, transparency, and flexible dielectric film makes them a highly promising means for flexible touching and pressure-sensing applications.

  1. Biosensor properties of SOI nanowire transistors with a PEALD Al{sub 2}O{sub 3} dielectric protective layer

    Energy Technology Data Exchange (ETDEWEB)

    Popov, V. P., E-mail: popov@isp.nsc.ru; Ilnitskii, M. A.; Zhanaev, E. D. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Myakon’kich, A. V.; Rudenko, K. V. [Russian Academy of Sciences, Physical Technological Institute (Russian Federation); Glukhov, A. V. [Novosibirsk Semiconductor Device Plant and Design Bureau (Russian Federation)

    2016-05-15

    The properties of protective dielectric layers of aluminum oxide Al{sub 2}O{sub 3} applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al{sub 2}O{sub 3} layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 10{sup 11} cm{sup −2} at surface states. The application of a positive potential to the substrate (V{sub sub} > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.

  2. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  3. Low-dielectric layer increases nanosecond electric discharges in distilled water

    KAUST Repository

    Hamdan, Ahmad; Cha, Min

    2016-01-01

    decreasing of the energy consumption are the main goals of today’s research. Here we present an experimental study of nanosecond discharge in distilled water covered by a layer of dielectric material. We demonstrate through this paper that the discharge

  4. Pulsed electromagnetic field radiation from a narrow slot antenna with a dielectric layer

    NARCIS (Netherlands)

    Štumpf, M.; De Hoop, A.T.; Lager, I.E.

    2010-01-01

    Analytic time domain expressions are derived for the pulsed electromagnetic field radiated by a narrow slot antenna with a dielectric layer in a two?dimensional model configuration. In any finite time window of observation, exact pulse shapes for the propagated, reflected, and refracted wave

  5. Enhanced transmission through arrays of subwavelength holes in gold films coated by a finite dielectric layer

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Mortensen, Niels Asger; Qiu, M.

    2007-01-01

    resonances attributing to the enhanced transmission: the localized waveguide resonance and periodic surface plasmon resonances. For the film coated with dielectric layers, calculated results show that in the wavelength region of interest the localized waveguide resonant mode attributes to sensing rather than...

  6. Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

    International Nuclear Information System (INIS)

    Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

    2013-01-01

    An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

  7. Thermionic detector with multiple layered ionization source

    International Nuclear Information System (INIS)

    Patterson, P. L.

    1985-01-01

    Method and apparatus for analyzing specific chemical substances in a gaseous environment comprises a thermionic source formed of multiple layers of ceramic material composition, an electrical current instrumentality for heating the thermionic source to operating temperatures in the range of 100 0 C. to 1000 0 C., an instrumentality for exposing the surface of the thermionic source to contact with the specific chemical substances for the purpose of forming gas phase ionization of the substances by a process of electrical charge emission from the surface, a collector electrode disposed adjacent to the thermiomic source, an instrumentality for biasing the thermionic source at an electrical potential which causes the gas phase ions to move toward the collector, and an instrumentality for measuring the ion current arriving at the collector. The thermionic source is constructed of a metallic heater element molded inside a sub-layer of hardened ceramic cement material impregnated with a metallic compound additive which is non-corrosive to the heater element during operation. The sub-layer is further covered by a surface-layer formed of hardened ceramic cement material impregnated with an alkali metal compound in a manner that eliminates corrosive contact of the alkali compounds with the heater element. The sub-layer further protects the heater element from contact with gas environments which may be corrosive. The specific ionization of different chemical substances is varied over a wide range by changing the composition and temperature of the thermionic source, and by changing the composition of the gas environment

  8. Period multiplication and chaotic phenomena in atmospheric dielectric-barrier glow discharges

    International Nuclear Information System (INIS)

    Wang, Y. H.; Zhang, Y. T.; Wang, D. Z.; Kong, M. G.

    2007-01-01

    In this letter, evidence of temporal plasma nonlinearity in which atmospheric dielectric-barrier discharges undergo period multiplication and chaos using a one-dimensional fluid model is reported. Under the conditions conducive for chaotic states, several frequency windows are identified in which period multiplication and secondary bifurcations are observed. Such time-domain nonlinearity is important for controlling instabilities in atmospheric glow discharges

  9. Vertical dielectric screening of few-layer van der Waals semiconductors.

    Science.gov (United States)

    Koo, Jahyun; Gao, Shiyuan; Lee, Hoonkyung; Yang, Li

    2017-10-05

    Vertical dielectric screening is a fundamental parameter of few-layer van der Waals two-dimensional (2D) semiconductors. However, unlike the widely-accepted wisdom claiming that the vertical dielectric screening is sensitive to the thickness, our first-principles calculation based on the linear response theory (within the weak field limit) reveals that this screening is independent of the thickness and, in fact, it is the same as the corresponding bulk value. This conclusion is verified in a wide range of 2D paraelectric semiconductors, covering narrow-gap ones and wide-gap ones with different crystal symmetries, providing an efficient and reliable way to calculate and predict static dielectric screening of reduced-dimensional materials. Employing this conclusion, we satisfactorily explain the tunable band gap in gated 2D semiconductors. We further propose to engineer the vertical dielectric screening by changing the interlayer distance via vertical pressure or hybrid structures. Our predicted vertical dielectric screening can substantially simplify the understanding of a wide range of measurements and it is crucial for designing 2D functional devices.

  10. Compensation of propagation loss of surface plasmon polaritons with a finite-thickness dielectric gain layer

    International Nuclear Information System (INIS)

    Zhang, Xin; Liu, Haitao; Zhong, Ying

    2012-01-01

    We theoretically study the compensation of propagation loss of surface plasmon polaritons (SPPs) with the use of a finite-thickness dielectric layer with optical gain. The impacts of the gain coefficient, the gain-layer thickness and the wavelength on the loss compensation and the field distribution of the SPP mode are systematically explored with a fully vectorial method. Abnormal behaviors for the loss compensation as the gain-layer thickness increases are found and explained. Critical values of the gain coefficient and of the corresponding gain-layer thickness for just compensating the propagation loss are provided. Our results show that as the SPP propagation loss is fully compensated with a gain coefficient at a reasonably low level, the gain layer is still thin enough to ensure a large exterior SPP field at the gain-layer/air interface, which is important for achieving a strong light–matter interaction for applications such as bio-chemical sensing. (paper)

  11. Synchronization in networks with multiple interaction layers

    Science.gov (United States)

    del Genio, Charo I.; Gómez-Gardeñes, Jesús; Bonamassa, Ivan; Boccaletti, Stefano

    2016-01-01

    The structure of many real-world systems is best captured by networks consisting of several interaction layers. Understanding how a multilayered structure of connections affects the synchronization properties of dynamical systems evolving on top of it is a highly relevant endeavor in mathematics and physics and has potential applications in several socially relevant topics, such as power grid engineering and neural dynamics. We propose a general framework to assess the stability of the synchronized state in networks with multiple interaction layers, deriving a necessary condition that generalizes the master stability function approach. We validate our method by applying it to a network of Rössler oscillators with a double layer of interactions and show that highly rich phenomenology emerges from this. This includes cases where the stability of synchronization can be induced even if both layers would have individually induced unstable synchrony, an effect genuinely arising from the true multilayer structure of the interactions among the units in the network. PMID:28138540

  12. Development of a dual-layered dielectric-loaded accelerating structure

    International Nuclear Information System (INIS)

    Jing Chunguang; Kanareykin, Alexei; Kazakov, Sergey; Liu Wanming; Nenasheva, Elizaveta; Schoessow, Paul; Gai Wei

    2008-01-01

    rf Power attenuation is a critical problem in the development of dielectric-loaded structures for particle acceleration. In a previous paper [C. Jing, W. Liu, W. Gai, J. Power, T. Wong, Nucl. Instr. Meth. A 539 (2005) 445] we suggested the use of a Multilayer Dielectric-Loaded Accelerating Structure (MDLA) as a possible approach for reducing the rf losses in a single layer device. The MDLA is based on the principle of Bragg reflection familiar from optics that is used to partially confine the fields inside the dielectric layers and reduce the wall current losses at the outer boundary. We report here on the design, construction and testing of a prototype X-band double-layer structure (2DLA). The measurements show an rf power attenuation for the 2DLA more than ten times smaller than that of a comparable single-layer structure, in good agreement with the analytic results. Testing and operation of MDLAs also requires efficient power coupling from test equipment or rf power systems to the device. We describe the design and construction of two novel structures: a TM 03 mode launcher for cold testing and a power coupler for planned high-gradient experiments

  13. Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

    Science.gov (United States)

    Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

    2018-06-06

    Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting

  14. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  15. Influence of dielectric protective layer on laser damage resistance of gold coated gratings

    Science.gov (United States)

    Wu, Kepeng; Ma, Ping; Pu, Yunti; Xia, Zhilin

    2016-03-01

    Aiming at the problem that the damage threshold of gold coated grating is relatively low, a dielectric film is considered on the gold coated gratings as a protective layer. The thickness range of the protective layer is determined under the prerequisite that the diffraction efficiency of the gold coated grating is reduced to an acceptable degree. In this paper, the electromagnetic field, the temperature field and the stress field distribution in the grating are calculated when the silica and hafnium oxide are used as protective layers, under the preconditions of the electromagnetic field distribution of the gratings known. The results show that the addition of the protective layer changes the distribution of the electromagnetic field, temperature field and stress field in the grating, and the protective layer with an appropriate thickness can improve the laser damage resistance of the grating.

  16. All-optically tunable EIT-like dielectric metasurfaces hybridized with thin phase change material layers

    Science.gov (United States)

    Petronijevic, Emilija; Sibilia, Concita

    2017-05-01

    Electromagnetically induced transparency (EIT), a pump-induced narrow transparency window within the absorption region of a probe, had offered new perspectives in slow-light control in atomic physics. For applications in nanophotonics, the implementation on chip-scaled devices has later been obtained by mimicking this effect by metallic metamaterials. High losses in visible and near infrared range of metal-based metamaterialls have recently opened a new field of all-dielectric metamaterials; a proper configuration of high refractive index dielectric nanoresonators can mimick this effect without losses to get high Q, slow-light response. The next step would be the ability to tune their optical response, and in this work we investigate thin layers of phase change materials (PCM) for all-optical control of EIT-like all-dielectric metamaterials. PCM can be nonvolatively and reversibly switched between two stable phases that differ in optical properties by applying a visible laser pulse. The device is based on Si nanoresonators covered by a thin layer of PCM GeTe; optical and transient thermal simulations have been done to find and optimize the fabrication parameters and switching parameters such as the intensity and duration of the pulse. We have found that the EIT-like response can be switched on and off by applying the 532nm laser pulse to change the phase of the upper GeTe layer. We strongly believe that such approach could open new perspectives in all-optically controlled slow-light metamaterials.

  17. Studies of low current back-discharge in point-plane geometry with dielectric layer

    International Nuclear Information System (INIS)

    Jaworek, A.; Rajch, E.; Czech, T.; Lackowski, M

    2005-01-01

    The paper presents results of spectroscopic investigations of back-discharge generated in the point-plane electrode geometry in air at atmospheric pressure, with the plane covered with fly ash layer. Four forms of the discharges were studied: onset streamers, glow, breakdown streamers and low-current back-arc discharge. Both polarities of the active discharge electrode, positive and negative, were tested. The back discharge is a type of DC electrical discharge, which take place when the passive plane electrode is covered with a dielectric layer. The layer can be made of solid material or a packed bed of dust or powder of low conductivity. The charge produced due to ionisation processes in the vicinity of the active point electrode is accumulated on the dielectric surface, and generates high electric field through this layer. When critical electric field through the layer is attained an electrical breakdown of the layer take place. The point of breakdown becomes a new source of ions of polarity opposite to those generated by the active electrode. The dielectric layer on the passive electrode causes that gaseous discharges such as breakdown streamers or arc start at lower voltages than they could in the case of normal corona discharge. The visual forms of the discharge were recorded and correlated with the current-voltage characteristics and optical emission spectra. Emission spectra of the discharge were measured in the light wavelength range of 200 to 600 nm to get information about excitation and ionisation processes. The light spectra were analysed by monochromator SPM-2 Karl-Zeiss-Jena with diffraction grating of 1302 grooves/mm and photomultiplier R375 (Hamamatsu) and signal preamplifier unit C7319 (Hamamatsu). The spectral analysis showed that the nitrogen molecular bands were dominant, but the emission of negative ions from the dielectric layer material were also detected. The most noticeable light emission in the range from 280 to 490 nm due to second

  18. Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

    Science.gov (United States)

    Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

    2015-11-01

    Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

  19. THz - ToF Optical Layer Analysis (OLA) to determine optical properties of dielectric materials

    Science.gov (United States)

    Spranger, Holger; Beckmann, Jörg

    2017-02-01

    Electromagnetic waves with frequencies between 0.1 and 10 THz are described as THz-radiation (T-ray). The ability to penetrate dielectric materials makes T-rays attractive to reveal discontinuities in polymer and ceramic materials. THz-Time Domain Spectroscopy Systems (THz-TDS) are available on the market today which operates with THz-pulses transmitted and received by optically pumped semiconductor antennas. In THz-TDS the travelling time (ToF) and shape of the pulse is changed if it interacts with the dielectric material and its inherent discontinuities. A tomogram of the object under the test can be reconstructed from time of flight diffraction (ToFD) scans if a synthetic focusing aperture (SAFT) algorithm is applied. The knowledge of the base materials shape and optical properties is essential for a proper reconstruction result. To obtain these properties a model is assumed which describes the device under the test as multilayer structure composed of thin layers with different dielectric characteristics. The Optical Layer Analysis (OLA) is able to fulfill these requirements. A short description why the optical properties are crucial for meaningful SAFT reconstruction results will be given first. Afterwards the OLA will be derived and applied on representative samples to discuss and evaluate its benefits and limits.

  20. Multiple Bloch surface waves in visible region of light at the interfaces between rugate filter/rugate filter and rugate filter/dielectric slab/rugate filter

    Science.gov (United States)

    Ullah Manzoor, Habib; Manzoor, Tareq; Hussain, Masroor; Manzoor, Sanaullah; Nazar, Kashif

    2018-04-01

    Surface electromagnetic waves are the solution of Maxwell’s frequency domain equations at the interface of two dissimilar materials. In this article, two canonical boundary-value problems have been formulated to analyze the multiplicity of electromagnetic surface waves at the interface between two dissimilar materials in the visible region of light. In the first problem, the interface between two semi-infinite rugate filters having symmetric refractive index profiles is considered and in the second problem, to enhance the multiplicity of surface electromagnetic waves, a homogeneous dielectric slab of 400 nm is included between two semi-infinite symmetric rugate filters. Numerical results show that multiple Bloch surface waves of different phase speeds, different polarization states, different degrees of localization and different field profiles are propagated at the interface between two semi-infinite rugate filters. Having two interfaces when a homogeneous dielectric layer is placed between two semi-infinite rugate filters has increased the multiplicity of electromagnetic surface waves.

  1. Heat transfer enhancement induced by electrically generated convection in a plane layer of dielectric liquid

    International Nuclear Information System (INIS)

    Traoré, P; Wu, J; Romat, H; Louste, C; Perez, A; Koulova, D

    2012-01-01

    The electro-thermo-convective motion in a plane horizontal dielectric liquid layer subjected to simultaneous action of electric field and thermal gradient is numerically investigated. We consider the case of a strong unipolar charge injection C = 10 from above or below. Therefore in this context, we only take into account the Coulomb force, disregarding the dielectric one. The effect of the electric field on the heat transfer is analyzed through the characterization of the time history of the Nusselt number as well as its evolution according to the characteristic dimensionless electric parameter T. It is demonstrated that the electric effects dominate the buoyancy ones resulting in an electrically induced convection which significantly enhance the heat transfer.

  2. Light scattering in plane dielectric layers: Modeling in the 2d reciprocal space

    International Nuclear Information System (INIS)

    Shcherbakov, Alexey A.; Tishchenko, Alexandre V.

    2012-01-01

    The generalized source method previously developed for the light diffraction calculation on periodic dielectric structures is applied for the light scattering calculation in non-periodic planar media. This significantly enlarges the domain of applicability of Fourier-methods in light scattering modeling since the generalized source method is of much less numerical complexity than other rigorous methods used. -- Highlights: ► Method for light scattering simulation in planar layers. ► The approach is fairly independent of scattering particles’ shape. ► The method is based on the rigorous solution of Maxwell's equations. ► Each calculation stage allows the accuracy control by the convergence monitoring. ► Possibility to consider any practically possible dielectric materials.

  3. Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach

    International Nuclear Information System (INIS)

    Guerfi, Y; Doucet, J B; Larrieu, G

    2015-01-01

    Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness. (paper)

  4. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  5. Enhanced optical-to-THz conversion efficiency of photoconductive antenna using dielectric nano-layer encapsulation

    Science.gov (United States)

    Gupta, Abhishek; Rana, Goutam; Bhattacharya, Arkabrata; Singh, Abhishek; Jain, Ravikumar; Bapat, Rudheer D.; Duttagupta, S. P.; Prabhu, S. S.

    2018-05-01

    Photoconductive antennas (PCAs) are among the most conventional devices used for emission as well as detection of terahertz (THz) radiation. However, due to their low optical-to-THz conversion efficiencies, applications of these devices in out-of-laboratory conditions are limited. In this paper, we report several factors of enhancement in THz emission efficiency from conventional PCAs by coating a nano-layer of dielectric (TiO2) on the active area between the electrodes of a semi-insulating GaAs-based device. Extensive experiments were done to show the effect of thicknesses of the TiO2 layer on the THz power enhancement with different applied optical power and bias voltages. Multiphysics simulations were performed to elucidate the underlying physics behind the enhancement of efficiency of the PCA. Additionally, this layer increases the robustness of the electrode gaps of the PCAs with high electrical insulation as well as protect it from external dust particles.

  6. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  7. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  8. On the possibility of superluminal energy propagation in a hyperbolic metamaterial of metal-dielectric layers

    Directory of Open Access Journals (Sweden)

    Pi-Gang Luan

    2018-01-01

    Full Text Available The energy propagation of electromagnetic fields in the effective medium of a one-dimensional photonic crystal consisting of dielectric and metallic layers is investigated. We show that the medium behaves like Drude and Lorentz medium, respectively, when the electric field is parallel and perpendicular to the layers. For arbitrary time-varying electromagnetic fields in this medium, the energy density formula is derived. We prove rigorously that the group velocity of any propagating mode obeying the hyperbolic dispersion must be slower than the speed of light in vacuum, taking into account the frequency dependence of the permittivity tensor. That is, it is not possible to have superluminal propagation in this dispersive hyperbolic medium consisting of real dielectric and metallic material layers. The propagation velocity of a wave packet is also studied numerically. This packet velocity is very close to the velocity of the propagating mode having the central frequency and central wave vector of the wave packet. When the frequency spread of the wave packet is not narrow enough, small discrepancy between these two velocities manifests, which is caused by the non-penetration effect of the evanescent modes. This work reveals that no superluminal phenomenon can happen in a dispersive anisotropic metamaterial medium made of real materials.

  9. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  10. Multi-layered dielectric cladding plasmonic microdisk resonator filter and coupler

    International Nuclear Information System (INIS)

    Han Cheng, Bo; Lan, Yung-Chiang

    2013-01-01

    This work develops the plasmonic microdisk filter/coupler, whose effectiveness is evaluated by finite-difference time-domain simulation and theoretical analyses. Multi-layer dielectric cladding is used to prevent the scattering of surface plasmons (SPs) from a silver microdisk. This method allows devices that efficiently perform filter/coupler functions to be developed. The resonant conditions and the effective refractive index of bounded SP modes on the microdisk are determined herein. The waveguide-to-microdisk distance barely influences the resonant wavelength but it is inversely related to the bandwidth. These findings are consistent with predictions made using the typical ring resonator model.

  11. Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

    Science.gov (United States)

    Yang, Yu; Koeck, Franz A.; Dutta, Maitreya; Wang, Xingye; Chowdhury, Srabanti; Nemanich, Robert J.

    2017-10-01

    This study investigates how the surface conductivity of H-terminated diamond can be preserved and stabilized by using a dielectric layer with an in situ post-deposition treatment. Thin layers of Al2O3 were grown by plasma enhanced atomic layer deposition (PEALD) on H-terminated undoped diamond (100) surfaces. The changes of the hole accumulation layer were monitored by correlating the binding energy of the diamond C 1s core level with electrical measurements. The initial PEALD of 1 nm Al2O3 resulted in an increase of the C 1s core level binding energy consistent with a reduction of the surface hole accumulation and a reduction of the surface conductivity. A hydrogen plasma step restored the C 1s binding energy to the value of the conductive surface, and the resistance of the diamond surface was found to be within the range for surface transfer doping. Further, the PEALD growth did not appear to degrade the surface conductive layer according to the position of the C 1s core level and electrical measurements. This work provides insight into the approaches to establish and control the two-dimensional hole-accumulation layer of the H-terminated diamond and improve the stability and performance of H-terminated diamond electronic devices.

  12. Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

    2014-02-25

    Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.

  13. Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

    Science.gov (United States)

    Hill, Heather M.; Rigosi, Albert F.; Chowdhury, Sugata; Yang, Yanfei; Nguyen, Nhan V.; Tavazza, Francesca; Elmquist, Randolph E.; Newell, David B.; Hight Walker, Angela R.

    2017-11-01

    Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Although much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density-functional theory, to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV.

  14. Field Enhancement in a Grounded Dielectric Slab by Using a Single Superstrate Layer

    Directory of Open Access Journals (Sweden)

    Constantinos A. Valagiannopoulos

    2012-01-01

    Full Text Available The addition of a dielectric layer on a slab configuration is frequently utilized in various electromagnetic devices in order to give them certain desired operational characteristics. In this work, we consider a grounded dielectric film-slab, which is externally excited by a normally-incident Gaussian beam. On top of the film-slab, we use an additional suitably selected single isotropic superstrate layer in order to increase the field concentration inside the slab and hence achieve optimal power transfer from the external source to the internal region. We define a quantity of interest, called “enhancement factor,” expressing the increase of the field concentration in the film-slab when the superstrate is present compared to the case that it is absent. It is shown that large enhancement factor values may be achieved by choosing properly the permittivity, the permeability, and the thickness of the superstrate. In particular, it is demonstrated that the field in the film-slab is significantly enhanced when the slab is composed by an ϵ-near-zero (ENZ or low-index metamaterial.

  15. High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

    Science.gov (United States)

    Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

  16. Miniaturization of Multiple-Layer Folded Patch Antennas

    DEFF Research Database (Denmark)

    Zhang, Jiaying; Breinbjerg, Olav

    2009-01-01

    A new folded patch antenna with multiple layers was developed in this paper, by folding the patch in a proper way, and a highly miniaturized antenna can be realized. The multiple layer patch with 4-layer and 6-layer are designed and evaluated at 2.4 GHz, 915 MHz, and 415 MHz respectively. Then a 4...... layer patch is fabricated and measured to validate the design method. The theoretical analysis, design and simulations, fabrications, as well as the measurements are presented in this paper. All the results show that the folded patch antenna is a good candidate in making a highly miniaturized compact...

  17. Artificial dispersion via high-order homogenization: magnetoelectric coupling and magnetism from dielectric layers

    Science.gov (United States)

    Liu, Yan; Guenneau, Sébastien; Gralak, Boris

    2013-01-01

    We investigate a high-order homogenization (HOH) algorithm for periodic multi-layered stacks. The mathematical tool of choice is a transfer matrix method. Expressions for effective permeability, permittivity and magnetoelectric coupling are explored by frequency power expansions. On the physical side, this HOH uncovers a magnetoelectric coupling effect (odd-order approximation) and artificial magnetism (even-order approximation) in moderate contrast photonic crystals. Comparing the effective parameters' expressions of a stack with three layers against that of a stack with two layers, we note that the magnetoelectric coupling effect vanishes while the artificial magnetism can still be achieved in a centre-symmetric periodic structure. Furthermore, we numerically check the effective parameters through the dispersion law and transmission property of a stack with two dielectric layers against that of an effective bianisotropic medium: they are in good agreement throughout the low-frequency (acoustic) band until the first stop band, where the analyticity of the logarithm function of the transfer matrix () breaks down. PMID:24101891

  18. Single and multiple electromagnetic scattering by dielectric obstacles from a resonance perspective

    International Nuclear Information System (INIS)

    Riley, D.J.

    1987-03-01

    A new application of the singularity expansion method (SEM) is explored. This application combines the classical theory of wave propagation through a multiple-scattering environment and the SEM. Because the SEM is generally considered to be a theory for describing surface currents on conducting scatters, extensions are made which permit, under certain conditions, a singularity expansion representation for the electromagnetic field scattered by a dielectric scatterer. Application of this expansion is then made to the multiple-scattering case using both single and multiple interactions. A resonance scattering tensor form is used for the SEM description which leds to an associated tensor form for the solution to the multiple-scattering problem with each SEM pole effect appearing explicitly. The coherent field is determined for both spatial and SEM parameter random variations. A numerical example for the case of an ensemble of dielectric spheres which possess frequency-dependent loss is also made. Accurate resonance expansions for the single-scattering problem are derived, and resonance trajectories based on the Debye relaxation model for the refractive index are introduced. Application of these resonance expansions is then made to the multiple-scattering results for a slab containing a distribution of spheres with varying radii. Conditions are discussed which describe when the hybrid theory is appropriate. 53 refs., 21 figs., 9 tabs

  19. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    Science.gov (United States)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-06-09

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  20. Theoretical Modeling and Analysis of L- and P-band Radar Backscatter Sensitivity to Soil Active Layer Dielectric Variations

    Directory of Open Access Journals (Sweden)

    Jinyang Du

    2015-07-01

    Full Text Available Freeze-thaw (FT and moisture dynamics within the soil active layer are critical elements of boreal, arctic and alpine ecosystems, and environmental change assessments. We evaluated the potential for detecting dielectric changes within different soil layers using combined L- and P-band radar remote sensing as a prerequisite for detecting FT and moisture profile changes within the soil active layer. A two-layer scattering model was developed and validated for simulating radar responses from vertically inhomogeneous soil. The model simulations indicated that inhomogeneity in the soil dielectric profile contributes to both L- and P-band backscatter, but with greater P-band sensitivity at depth. The difference in L- and P-band responses to soil dielectric profile inhomogeneity appears suitable for detecting associated changes in soil active layer conditions. Additional evaluation using collocated airborne radar (AIRSAR observations and in situ soil moisture measurements over alpine tundra indicates that combined L- and P-band SAR observations are sensitive to soil dielectric profile heterogeneity associated with variations in soil moisture and FT conditions.

  1. Low-dielectric layer increases nanosecond electric discharges in distilled water

    KAUST Repository

    Hamdan, Ahmad

    2016-10-24

    Electric discharge in liquids is an emerging field of research, and is involved into various environmental applications (water purification, fuel reforming, nanomaterial synthesis, etc.). Increasing the treatment efficiency with simultaneous decreasing of the energy consumption are the main goals of today’s research. Here we present an experimental study of nanosecond discharge in distilled water covered by a layer of dielectric material. We demonstrate through this paper that the discharge efficiency can be improved by changing the interface position regarding the anode tip. The efficiency increase is due to the increase of the discharge probability as well as the plasma volume. The understanding of the experimental results is brought and strengthened by simulating the electric field distribution, using Comsol Multiphysics software. Because the dielectric permittivity (ε) is discontinuous at the interface, the electric field is enhanced by a factor that depends on the relative value of ε of the two liquids. The present result is very promising in future: opportunities for potential applications as well as fundamental studies for discharges in liquid.

  2. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    Directory of Open Access Journals (Sweden)

    Takashi Ando

    2012-03-01

    Full Text Available Current status and challenges of aggressive equivalent-oxide-thickness (EOT scaling of high-κ gate dielectrics via higher-κ ( > 20 materials and interfacial layer (IL scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm, but with effective workfunction (EWF values suitable only for n-type field-effect-transistor (FET. Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.

  3. Compressibility effects on the non-linear receptivity of boundary layers to dielectric barrier discharges

    Science.gov (United States)

    Denison, Marie F. C.

    The reduction of drag and aerodynamic heating caused by boundary layer transition is of central interest for the development of hypersonic vehicles. Receptivity to flow perturbation in the form of Tollmien-Schlichting (TS) wave growth often determines the first stage of the transition process, which can be delayed by depositing specific excitations into the boundary layer. Weakly ionized Dielectric Barrier Discharge (DBD) actuators are being investigated as possible sources of such excitations, but little is known today about their interaction with high-speed flows. In this framework, the first part of the thesis is dedicated to a receptivity study of laminar compressible boundary layers over a flat plate by linear stability analysis following an adjoint operator formulation, under DBD representative excitations assumed independent of flow conditions. The second part of the work concentrates on the development of a coupled plasma-Navier and Stokes solver targeted at the study of supersonic flow and compressibility effects on DBD forcing and non-parallel receptivity. The linear receptivity study of quasi-parallel compressible flows reveals several interesting features such as a significant shift of the region of maximum receptivity deeper into the flow at high Mach number and strong wave amplitude reduction compared to incompressible flows. The response to DBD relevant excitation distributions and to variations of the base flow conditions and system length scales follows these trends. Observed absolute amplitude changes and relative sensitivity modifications between source types are related to the evolution of the offset between forcing peak profile and relevant adjoint mode maximum. The analysis highlights the crucial importance of designing and placing the actuator in a way that matches its force field to the position of maximum boundary layer receptivity for the specific flow conditions of interest. In order to address the broad time and length scale spectrum

  4. Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

    Science.gov (United States)

    Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

  5. Multiple-Layer Parking with Screening

    NARCIS (Netherlands)

    van Enter, Aernout; Fleurke, Sjoert; Rudas, Imre J.

    2015-01-01

    In this article a multilayer parking system with screening of size n = 3 is studied with a focus on the time-dependent particle density. We prove that the asymptotic limit of the particle density increases from an average density of 1/3 on the first layer to the value of (10 − √5 )/19 ≈ 0.4086 in

  6. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  7. Theory of differential and integral scattering of laser radiation by a dielectric surface taking a defect layer into account

    NARCIS (Netherlands)

    Azarova, VV; Dmitriev, VG; Lokhov, YN; Malitskii, KN

    The differential and integral light scattering by dielectric surfaces is studied theoretically taking a thin nearsurface defect layer into account. The expressions for the intensities of differential and total integral scattering are found by the Green function method. Conditions are found under

  8. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  9. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti; Alshammari, Fwzah H.; Salama, Khaled N.; Alshareef, Husam N.

    2017-01-01

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  10. Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

    Directory of Open Access Journals (Sweden)

    Rambausek Lina

    2014-09-01

    Full Text Available In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on its realisation. Microelectronics like organic field effect transistor (OFET can be manufactured with a layered architecture. The production techniques used for this purpose can also be applied on textile substrates. Besides gate, active and contact layers, the isolating or dielectric layer is of high importance in the OFET architecture. Therefore, generating a high quality dielectric layer that is of low roughness and insulating at the same time is one of the fundamental requirements in building microelectronics on textile surfaces. To evaluate its potential, we have studied polyimide as a dielectric layer, dip-coated onto copper-coated polyester filaments. Accordingly, the copper-coated polyester filament was dip-coated from a polyimide solution with two different solvents, 1-methyl-2-pyrrolidone (NMP and dimethylformaldehyde. A variety of dip-coating speeds, solution concentrations and solvent-solute combinations have been tested. Their effect on the quality of the layer was analysed through microscopy, leak current measurements and atomic force microscopy (AFM. Polyimide dip-coating with polyimide resin dissolved in NMP at a concentration of 15w% in combination with a dip-coating speed of 50 mm/min led to the best results in electrical insulation and roughness. By optimising the dielectric layer’s properties, the way is paved for applying the subsequent semi-conductive layer. In further research, we will be working with the organic semiconductor material TIPS-Pentacene

  11. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  12. Inverse scattering of a layered and dispersionless dielectric half-space - 1. reflection data from plane waves at normal incidence

    International Nuclear Information System (INIS)

    Coen, S.

    1981-01-01

    The theory given by Moses and deRidder is modified so that the derivative of the solution of the Gelfand-Levitan integral equation is not required. Based on this modification, a numerical procedure is developed which approximately constructs the dielectric profile of the layered half-space from the impulse response. Moreover, an inverse scattering theory is developed for a Goupillaud-type dielectric medium, and a fast numerical procedure based on the Berryman and Greene algorithm is presented. The performance of the numerical algorithms is examined by applying them to pecise and imprecise artificial impulse response data. 11 refs

  13. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    Science.gov (United States)

    Khan, S.; Yogeswaran, N.; Taube, W.; Lorenzelli, L.; Dahiya, R.

    2015-12-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm2 V-1 s-1. The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates.

  14. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    International Nuclear Information System (INIS)

    Khan, S; Yogeswaran, N; Lorenzelli, L; Taube, W; Dahiya, R

    2015-01-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm 2 V −1 s −1 . The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates. (paper)

  15. Characteristics of powdered activated carbon treated with dielectric barrier discharge for electric double-layer capacitors

    International Nuclear Information System (INIS)

    Tashima, Daisuke; Yoshitama, Hiromu; Sakoda, Tatsuya; Okazaki, Akihito; Kawaji, Takayuki

    2012-01-01

    Highlights: ► The specific capacitance of the EDLCs could be improved by oxygen plasma treatment. ► 15 s treated EDLCs showed a 20% increase in capacitance relative to untreated EDLCs. ► The plasma treatment yields EDLCs that are suitable for high-energy applications. - Abstract: The electrochemical properties of electric double-layer capacitors (EDLCs) made with plasma-treated powdered activated carbon (treated using a dielectric barrier discharge) were examined using cyclic voltammetry (CV), Cole–Cole plots, and X-ray photoelectron spectroscopy (XPS). The dielectric barrier discharge method, which operates at atmospheric pressure, dramatically reduces the processing time and does not require vacuum equipment, making it a more practical alternative than low-pressure plasma treatment. The experimental data indicate that the specific capacitance of the EDLCs could be improved by oxygen plasma treatment. Capacitance of EDLCs made with activated carbon treated for 15 s showed 193.5 F/g that 20% increase in the specific capacitance relative to untreated EDLCs. This result indicates that the plasma treatment yields EDLCs that are suitable for high-energy applications. The enhancement of capacitance was mainly attributed to an increase in the BET surface area of the activated carbon and the creation of carboxyl groups on the surface of the carbon. The carboxyl groups induced oxidation–reduction reactions in the presence of O 2 which was included in the operation gas. In addition, the carboxyl groups improved the penetration of the electrolyte solution into the carbon electrodes.

  16. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

    Directory of Open Access Journals (Sweden)

    Sebastian Koslowski

    2017-07-01

    Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

  17. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

    Science.gov (United States)

    Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

    2017-01-01

    With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

  18. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  19. Influence of the polarity of the applied voltage on the reignition of a discharge below a dielectric layer in air at atmospheric pressure

    International Nuclear Information System (INIS)

    Pechereau, François; Bourdon, Anne

    2014-01-01

    The dynamics of an atmospheric pressure air discharge in a point-to-plane geometry with a dielectric layer obstacle on the discharge path is investigated numerically for different applied voltages. Whatever the polarity of the voltage applied, first, a streamer discharge of the same polarity ignites at the point and propagates towards the dielectric layer. After the impact on the dielectric surface, the streamer discharge spreads along the upper dielectric surface and charges it positively or negatively depending on its polarity. On the bottom surface of the dielectric layer, charges with an opposite polarity are deposited. Surface charges on both faces of the dielectric layer are shown to have a significant influence on the discharge reignition for a negative applied voltage, but not for a positive one. Furthermore, it is shown that the dynamics of the discharge reignition below the dielectric layer depends on the polarity of the applied voltage at the point electrode. For a positive applied voltage, the reignited discharge is a positive ionization wave propagating towards the grounded plane. For a negative applied voltage, a double headed discharge is observed with positive and negative fronts propagating in opposite directions. Finally, the minimal value of the ionization integral to have a discharge reignition below the dielectric obstacle is found to be less for a negative applied voltage than for a positive one. (paper)

  20. The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials

    International Nuclear Information System (INIS)

    McCoy, A P; Bogan, J; Walsh, L; Byrne, C; O’Connor, R; Hughes, G; Woicik, J C

    2015-01-01

    This work investigates the impact of porosity in low-κ dielectric materials on the chemical and structural properties of deposited Mn thin films for copper diffusion barrier layer applications. X-ray photoelectron spectrscopy (XPS) results highlight the difficulty in distinguishing between the various Mn oxidation states which form at the interlayer dielectric (ILD)/Mn interface. The presence of MnSiO 3 and MnO were identified using x-ray absorption spectroscopy (XAS) measurements on both porous and non-porous dielectric materials with evidence of Mn 2 O 3 and Mn 3 O 4 in the deposited film on the latter surface. It is shown that a higher proportion of deposited Mn converts to Mn silicate on an ILD film which has 50% porosity compared with the same dielectric material with no porosity, which is attributed to an enhanced chemical interaction with the effective larger surface area of porous dielectric materials. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDX) data shows that the Mn overlayer remains predominately surface localised on both porous and non-porous materials. (paper)

  1. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  2. Dry etching of MgCaO gate dielectric and passivation layers on GaN

    International Nuclear Information System (INIS)

    Hlad, M.; Voss, L.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Ren, F.

    2006-01-01

    MgCaO films grown by rf plasma-assisted molecular beam epitaxy and capped with Sc 2 O 3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs), respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively coupled plasmas of CH 4 /H 2 /Ar produced etch rates only in the range 20-70 A/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (∼100 A/min) were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH 4 /H 2 /Ar plasma chemistry produced a selectivity of around 2 for etching the MgCaO with respect to GaN

  3. Effect of interfacial layers on dielectric properties in very thin SrBi2Ta2O9 capacitors

    International Nuclear Information System (INIS)

    Moon, Bum-Ki; Isobe, Chiharu; Hironaka, Katsuyuki; Hishikawa, Shinichi

    2001-01-01

    The effect of interfacial layers on the dielectric properties in very thin SrBi 2 Ta 2 O 9 (SBT) capacitors has been investigated using static measurements. Total permittivity (ε t ) decreased as the film thickness was reduced in both Pt/SBT/Pt and Ir/SBT/Pt capacitors. The contribution of the interfacial capacitance (C int ) and bulk capacitance to the total capacitance indicates that C int of the Ir/SBT/Pt structure was lower than that of the Pt/SBT/Pt structure, while the bulk permittivity (ε b ) was essentially the same. The dispersion of all capacitors followed the power law, while the Ir/SBT/Pt capacitor showed a larger dispersion of C int . These results suggest that the Pt/SBT/Pt capacitor is preferred for obtaining the high performance with less effect of the interfacial layers on the dielectric properties. [copyright] 2001 American Institute of Physics

  4. Electromagnetic Pulse Generated by a Horizontal Electric Dipole over a Perfect Conductor Covered with a Dielectric Layer

    Directory of Open Access Journals (Sweden)

    Zheng Juan

    2018-01-01

    Full Text Available In this paper, the electromagnetic pulse due to a delta-function current excitation has been derived on the planar surface of a perfect conductor coated by a dielectric layer. The approximate expression of wave component is obtained when both the transmitting source and the receiving antennas are located on the surface of the dielectric. When the thickness of the intermediate layer is subjected to the condition of k1l<<0.6, this physical model is applied to the microstrip circuit. Analysis and computations of the wave components are carried out on the microstrip circuit, including the surface trapped wave vector which had been ignored in former studies. It is shown that the trapped-surface-wave terms should have been taken into consideration as the main contribution in total transient field in the far-field radiations.

  5. Multiple Fano resonances in single-layer nonconcentric core-shell nanostructures

    DEFF Research Database (Denmark)

    Zhang, Jingjing; Zayats, Anatoly

    2013-01-01

    where the multiple dark modes appear due to the geometrical symmetry breaking induced by axial offset of the core. Both dielectric-core-metal-shell (DCMS) and metal-core-dielectric-shell (MCDS) configurations have been studied. Compared to the MCDS structure, the DCMS configuration provides higher...

  6. Cross Talk Analysis on Multiple Coupled Transmission Lines; (The calculation of transfer functions on multiple coupled tansmission lines in an inhomogeneous dielectric medium)

    DEFF Research Database (Denmark)

    Dalby, Arne Brejning

    1994-01-01

    A flow graph relating voltages and the forward and reflected propagation modes (¿ TEM) on multiple coupled transmission lines in an inhomogeneous dielectric medium is presented. This flow graph directy gives the different transfer functions, including S-parameters, in matrix form needed to calcul......A flow graph relating voltages and the forward and reflected propagation modes (¿ TEM) on multiple coupled transmission lines in an inhomogeneous dielectric medium is presented. This flow graph directy gives the different transfer functions, including S-parameters, in matrix form needed...

  7. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors

    Science.gov (United States)

    Sang, Liwen; Ren, Bing; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

    2018-04-01

    The capacitance-voltage (C-V) hysteresis in the bidirectional measurements of the p-GaN metal-insulator-semiconductor (MIS) capacitor is suppressed by using a CaF2 dielectric layer and a post annealing treatment. The density of trapped charge states at the CaF2/p-GaN interface is dramatically reduced from 1.3 × 1013 cm2 to 1.1 × 1011/cm2 compared to that of the Al2O3/p-GaN interface with a large C-V hysteresis. It is observed that the disordered oxidized interfacial layer can be avoided by using the CaF2 dielectric. The downward band bending of p-GaN is decreased from 1.51 to 0.85 eV as a result of the low-density oxides-related trap states. Our work indicates that the CaF2 can be used as a promising dielectric layer for the p-GaN MIS structures.

  8. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  9. An Iterative Method for Solving of Coupled Equations for Conductive-Radiative Heat Transfer in Dielectric Layers

    Directory of Open Access Journals (Sweden)

    Vasyl Chekurin

    2017-01-01

    Full Text Available The mathematical model for describing combined conductive-radiative heat transfer in a dielectric layer, which emits, absorbs, and scatters IR radiation both in its volume and on the boundary, has been considered. A nonlinear stationary boundary-value problem for coupled heat and radiation transfer equations for the layer, which exchanges by energy with external medium by convection and radiation, has been formulated. In the case of optically thick layer, when its thickness is much more of photon-free path, the problem becomes a singularly perturbed one. In the inverse case of optically thin layer, the problem is regularly perturbed, and it becomes a regular (unperturbed one, when the layer’s thickness is of order of several photon-free paths. An iterative method for solving of the unperturbed problem has been developed and its convergence has been tested numerically. With the use of the method, the temperature field and radiation fluxes have been studied. The model and method can be used for development of noncontact methods for temperature testing in dielectrics and for nondestructive determination of its radiation properties on the base of the data obtained by remote measuring of IR radiation emitted by the layer.

  10. Melt front propagation in dielectrics upon femtosecond laser irradiation: Formation dynamics of a heat-affected layer

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lechuga, Mario, E-mail: mario@io.cfmac.csic.es, E-mail: j.siegel@io.cfmac.csic.es; Solis, Javier; Siegel, Jan, E-mail: mario@io.cfmac.csic.es, E-mail: j.siegel@io.cfmac.csic.es [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain)

    2016-04-25

    Several studies in dielectrics have reported the presence of a thin heat-affected layer underneath the ablation crater produced by femtosecond laser irradiation. In this work, we present a time-resolved microscopy technique that is capable of monitoring the formation dynamics of this layer and apply it to the study of a phosphate glass exposed to single pulses below the ablation threshold. A few nanoseconds after laser excitation, a melt front interface can be detected, which propagates into the bulk, gradually slowing down its speed. By means of image analysis combined with optical modeling, we are able to determine the temporal evolution of the layer thickness and its refractive index. Initially, a strong transient decrease in the refractive index is observed, which partially recovers afterwards. The layer resolidifies after approximately 1 μs after excitation, featuring a maximum thickness of several hundreds of nanometers.

  11. Melt front propagation in dielectrics upon femtosecond laser irradiation: Formation dynamics of a heat-affected layer

    International Nuclear Information System (INIS)

    Garcia-Lechuga, Mario; Solis, Javier; Siegel, Jan

    2016-01-01

    Several studies in dielectrics have reported the presence of a thin heat-affected layer underneath the ablation crater produced by femtosecond laser irradiation. In this work, we present a time-resolved microscopy technique that is capable of monitoring the formation dynamics of this layer and apply it to the study of a phosphate glass exposed to single pulses below the ablation threshold. A few nanoseconds after laser excitation, a melt front interface can be detected, which propagates into the bulk, gradually slowing down its speed. By means of image analysis combined with optical modeling, we are able to determine the temporal evolution of the layer thickness and its refractive index. Initially, a strong transient decrease in the refractive index is observed, which partially recovers afterwards. The layer resolidifies after approximately 1 μs after excitation, featuring a maximum thickness of several hundreds of nanometers.

  12. Multiple embryos, multiple nepionts and multiple equatorial layers in Cycloclypeus carpenteri.

    Science.gov (United States)

    Briguglio, Antonino; Kinoshita, Shunichi; Wolfgring, Erik; Hohenegger, Johann

    2016-04-01

    In this study, 17 specimens of Cycloclypeus carpenteri have been analyzed by means of microCT scanning. We used CT scanning technique as it enables the visualization and the quantifications of internal structures of hollow specimens without their destruction. It has been observed that many specimens possessing the natural morphology of this taxon, actually contain multiple embryos (up to 16 in one single specimen) and, in some few cases, multiple nepionts each with its own heterosteginid chambers (up to three separated nepionts). The diameter of each proloculus has been measured, and as a result, they are very variable even within the same specimen, therefore questioning the long known theory that schizonts have smaller proloculi than gamonts and also questioning the fact that proloculi in the same species should all have comparable size. Furthermore, we have observed the presence of additional equatorial planes on several specimens. Such additional planes are always connected to what seems to be the main equatorial plane. Such connections are T-shaped and are located at the junction between two equatorial layers; these junctions are made by a chamberlet, which possesses an unusually higher number of apertures. The connections between equatorial planes are always perfectly synchronized with the relative growth step and the same chamber can be therefore followed along the multiple equatorial planes. Apparently there is a perfect geometric relationship between the creation of additional equatorial planes and the position of the nepionts. Whenever the nepionts are positioned on different planes, additional planes are created and the angle of the nepionts is related to the banding angle of the equatorial planes. The presence of additional planes do not hamper the life of the cell, on the contrary, it seems that the cell is still able to build nicely shaped chamberlets and, after volumetric calculations, it seems all specimens managed to keep their logistic growth

  13. Toward the Physical Basis of Complex Systems: Dielectric Analysis of Porous Silicon Nanochannels in the Electrical Double Layer Length Range

    Directory of Open Access Journals (Sweden)

    Radu Mircea Ciuceanu

    2011-01-01

    Full Text Available Dielectric analysis (DEA shows changes in the properties of
    a materials as a response to the application on it of a time dependent electric field. Dielectric measurements are extremely sensitive to small changes in materials properties, that molecular relaxation, dipole changes, local motions that involve the reorientation of dipoles, and so can be observed by DEA. Electrical double layer (EDL, consists in a shielding layer that is naturally created within the liquid near a charged surface. The thickness of the EDL is given by the characteristic Debye length what grows less with the ionic strength defined by half summ products of concentration with square of charge for all solvent
    ions (co-ions, counterions, charged molecules. The typical length scale for the Debye length is on the order of 1 nm, depending on the ionic contents in the solvent; thus, the EDL becomes significant for nano-capillaries that nanochannels. The electrokinetic e®ects in the nanochannels depend essentialy on the distribution of charged species in EDL, described by the Poisson-Boltzmann equation those solutions require the solvent dielectric permittivity. In this work we propose a model for solvent low-frequency permittivity and a DEA profile taking into account both the porous silicon electrode and aqueous solvent properties in the Debye length range.

  14. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  15. Formation of a Refracted Electromagnetic Wave at the Output from a Plane-Parallel Dielectric Layer and Interference Nature of Fermat's Principle

    Science.gov (United States)

    Averbukh, B. B.; Averbukh, I. B.

    2015-04-01

    It is shown that a transition layer representing a spatial region in which field propagation is analogous to refraction in an inhomogeneous medium exists after a dielectric layer. In this region located within the near field zone the direction of the wave vector of the transmitted field varies smoothly, and with increasing distance from the layer, approaches to that of the wave incident on the layer. It is shown that such behavior of the field and occurrence of the transition layer are caused by the interference of the incident wave field and the fields of secondary sources excited in the dielectric by the incident wave field. It is shown that the refraction of the field in a homogeneous medium after the dielectric corresponds to Fermat's principle, and the interference nature of Fermat's principle is justified.

  16. Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Wong, William S.

    2018-02-01

    Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

  17. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2012-01-01

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  18. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  19. Co-firing behavior of ZnTiO3-TiO2 dielectrics/hexagonal ferrite composites for multi-layer LC filters

    International Nuclear Information System (INIS)

    Wang Mao; Zhou Ji; Yue Zhenxing; Li Longtu; Gui Zhilun

    2003-01-01

    The low-temperature co-firing compatibility between ferrite and dielectric materials is the key issue in the production process of multi-layer chip LC filters. This paper presents the co-firing behavior and interfacial diffusion of ZnTiO 3 -TiO 2 dielectric/Co 2 Z hexagonal ferrite multi-layer composites. It has been testified that proper constitutional modification is feasible to diminish co-firing mismatch and enhance co-firing compatibility. Interfacial reactions occur at the interface, which can strengthen combinations between ferrite layers and dielectric layers. Titanium and barium tend to concentrate at the interface; iron and zinc have a wide diffusion range

  20. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  1. Dielectric sample with two-layer charge distribution for space charge calibration purposes

    DEFF Research Database (Denmark)

    Holbøll, Joachim; Henriksen, Mogens; Rasmussen, C.

    2002-01-01

    In the present paper is described a dielectric test sample with two very narrow concentrations of bulk charges, achieved by two internal electrodes not affecting the acoustical properties of the sample, a fact important for optimal application of most space charge measuring systems. Space charge...

  2. Electrowetting Performances of Novel Fluorinated Polymer Dielectric Layer Based on Poly(1H,1H,2H,2H-perfluoroctylmethacrylate Nanoemulsion

    Directory of Open Access Journals (Sweden)

    Jiaxin Hou

    2017-06-01

    Full Text Available In electrowetting devices, hydrophobic insulating layer, namely dielectric layer, is capable of reversibly switching surface wettability through applied electric field. It is critically important but limited by material defects in dielectricity, reversibility, film forming, adhesiveness, price and so on. To solve this key problem, we introduced a novel fluorinated polyacrylate—poly(1H,1H,2H,2H-perfluoroctylmethacrylate (PFMA to construct micron/submicron-scale dielectric layer via facile spray coating of nanoemulsion for replacing the most common Teflon AF series. All the results illustrated that, continuous and dense PFMA film with surface relief less than 20 nm was one-step fabricated at 110 °C, and exhibited much higher static water contact angle of 124°, contact angle variation of 42°, dielectric constant of about 2.6, and breakdown voltage of 210 V than Teflon AF 1600. Particularly, soft and highly compatible polyacrylate mainchain assigned five times much better adhesiveness than common adhesive tape, to PFMA layer. As a promising option, PFMA dielectric layer may further facilitate tremendous development of electrowetting performances and applications.

  3. Dielectric functions, chemical and atomic compositions of the near surface layers of implanted GaAs by In+ ions

    Science.gov (United States)

    Kulik, M.; Kołodyńska, D.; Bayramov, A.; Drozdziel, A.; Olejniczak, A.; Żuk, J.

    2018-06-01

    The surfaces of (100) GaAs were irradiated with In+ ions. The implanted samples were isobaric annealed at 800 °C and then of dielectric function, the surface atomic concentrations of atoms and also the chemical composition of the near surface layers in these implanted semiconductor samples were obtained. The following investigation methods were used: spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry analyses (RBSA) and X-ray photoelectron spectroscopy (XPS) in the study of the above mentioned quantities, respectively. The change of the shape spectra of the dielectric functions at about 3.0 eV phonon energy, diffusion of In+ ions as well as chemical composition changes were observed after ion implantation and the thermal treatment. Due to displacement of Ga ions from GaAs by the In+ ions the new chemical compound InAs was formed. The relative amounts Ga2O3 and As2O3 ratio increase in the native oxide layers with the fluences increase after the thermal treatment of the samples. Additionally, it was noticed that the quantities of InO2 increase with the increasing values of the irradiated ions before thermal treatment.

  4. Ozone Generation in Dry Air Using Pulsed Discharges With and Without a Solid Dielectric Layer

    OpenAIRE

    Samaranayake, W.J.M.; Miyahara, Y.; Namihira, T.; Katsuki, S.; Hackam, R.; Akiyama, H.; ミヤハラ, Y.; ナミヒラ, タカオ; カツキ, スナオ; アキヤマ, ヒデノリ; 浪平, 隆男; 勝木, 淳; 秋山, 秀典

    2001-01-01

    Energy efficient generation of ozone is very important because ozone is being used increasingly in a wide range of industrial applications. Ozonizers usually use dielectric barrier discharges and employ alternating current (ac) with consequent heat generation, which necessitates cooling. In the present study, very short duration pulsed voltage is employed resulting in reduced heating of the gas and discharge reactor. A comparison of ozone generation in dry air using a coaxial concentric elect...

  5. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

    Science.gov (United States)

    Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

    2017-12-01

    X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

  6. Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

    Energy Technology Data Exchange (ETDEWEB)

    Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, 2410 Campus Shore Drive, Raleigh, North Carolina 27695 (United States)

    2015-06-15

    Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps with a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.

  7. Dielectric anomaly and relaxation natures in a Zn-Cr pillar−layered metal−organic framework with cages and channels

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chen; Yao, Zhi-Yuan; Liu, Shao-Xian; Luo, Hong-Bin [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); Zou, Yang, E-mail: zouyang@njtech.edu.cn [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); Li, Li [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); Ren, Xiao-Ming, E-mail: xmren@njtech.edu.cn [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009 (China); State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093 (China)

    2017-06-15

    A bimetallic metal–organic framework (MOF) with the formula [Zn{sub 3}btc{sub 2}(Cr{sub 3}O(isonic){sub 6}(H{sub 2}O){sub 2}(OH))]·(DMF){sub 15.5}(H{sub 2}O){sub 8} (H{sub 3}btc=1,3,5-benzenetricarboxylic acid; isonic=isonicotinicate) shows a pillar-layered structure. The monolayer consists of hexagon-like rings formed by the [Zn(isonic){sub 2}(btc){sub 2}] tetrahedral and the consecutive monolayers are pillared by trigonal–prismatic clusters of [Cr{sub 3}O(isonic){sub 6}(H{sub 2}O){sub 2}(OH)]through the remaining binding sites of the Zn{sup 2+} ions. DMF and water molecules are confined in the cages and channels. TGA indicates that the lattice DMF and water molecules begin to be released at temperatures above 363 K. Dielectric measurements were carried out in the range of 173–363 K and 1–10{sup 7} Hz for three successive thermal cycles. The dielectric spectroscopy obtained in the first thermal cycle was different from that observed in the next two thermal cycles, while the dielectric spectra in the last two thermal cycles were almost identical. The dielectric nature of this MOF is discussed in detail for each thermal cycle. Since MOFs are unique host–guest systems in which the structure of the host framework is designable and the guests are exchangeable, it is no doubt those MOFs are materials with a variety of dielectric natures. This study gives a fresh impetus to achieve MOFs–based dielectric materials. - Graphical abstract: The bimetallic MOF [Zn{sub 3}btc{sub 2}(Cr{sub 3}O(isonic){sub 6}(H{sub 2}O){sub 2}(OH))]·(DMF){sub 15.5}(H{sub 2}O){sub 8}1, shows a pillar-layered open-framework structure. The dielectric spectra of 1 are almost identical in the last two thermal cycles, whereas significantly different from that observed in the first thermal cycle. The novel dielectric anomaly associated with a stacked structure transformation of the disordered guests. - Highlights: • A bimetallic metal-organic framework shows a pillar-layered structure.

  8. An Aligned-Gap and Centered-Gap Rectangular Multiple Split Ring Resonator for Dielectric Sensing Applications

    Directory of Open Access Journals (Sweden)

    Izyani Mat Rusni

    2014-07-01

    Full Text Available This paper presents the design and development of a planar Aligned-Gap and Centered-Gap Rectangular Multiple Split Ring Resonator (SRR for microwave sensors that operates at a resonance frequency around 5 GHz. The sensor consists of a microstrip transmission line loaded with two elements of rectangular SRR on both sides. The proposed metamaterial sensors were designed and fabricated on Rogers RT5880 substrate having dielectric constant of 2.2 and thickness of 0.787 mm. The final dimension of the proposed sensor was measured at 35 × 14 mm2. Measured results show good agreement with simulated ones as well as exhibiting high Q-factor for use in sensing application. A remarkably shift of resonance frequency is observed upon introduction of several sample with different dielectric value.

  9. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  10. Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

    Directory of Open Access Journals (Sweden)

    Junsheng Liang

    2016-01-01

    Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

  11. Dual-Layer Density Estimation for Multiple Object Instance Detection

    Directory of Open Access Journals (Sweden)

    Qiang Zhang

    2016-01-01

    Full Text Available This paper introduces a dual-layer density estimation-based architecture for multiple object instance detection in robot inventory management applications. The approach consists of raw scale-invariant feature transform (SIFT feature matching and key point projection. The dominant scale ratio and a reference clustering threshold are estimated using the first layer of the density estimation. A cascade of filters is applied after feature template reconstruction and refined feature matching to eliminate false matches. Before the second layer of density estimation, the adaptive threshold is finalized by multiplying an empirical coefficient for the reference value. The coefficient is identified experimentally. Adaptive threshold-based grid voting is applied to find all candidate object instances. Error detection is eliminated using final geometric verification in accordance with Random Sample Consensus (RANSAC. The detection results of the proposed approach are evaluated on a self-built dataset collected in a supermarket. The results demonstrate that the approach provides high robustness and low latency for inventory management application.

  12. Zn(3)(4-OOCC(6)H(4)PO(3))(2): A polar metal phosphonate with pillared layered structure showing SHG-activity and large dielectric anisotropy.

    Science.gov (United States)

    Li, Jin-Tang; Cao, Deng-Ke; Akutagawa, Tomoyuki; Zheng, Li-Min

    2010-10-07

    A new metal phosphonate Zn(3)(4-OOCC(6)H(4)PO(3))(2) (1) is reported which crystallizes in orthorhombic space group Pca2(1). It shows a pillared layered structure in which the {ZnO(4)}, {ZnO(5)} and {PO(3)C} polyhedra are connected through corner- or edge-sharing to form an inorganic layer in the ab plane which contains 4- and 5-member rings. These layers are pillared by the uni-oriented 4-carboxylatephenylphosphonate ligands, thus leading to a polar 3D architecture. The dielectric anisotropy measurements of a single crystal of 1 reveal that dielectric constant along the inter-layer is larger than that along the intra-layer with a ratio of about 2.3. Second harmonic generation (SHG) activity is observed.

  13. Synergic nature of dielectric relaxation process in the layered perovskite halide salts: The case of 1,3- diammoniumpropylenetetrabromocadmate compound

    Science.gov (United States)

    Staśkiewicz, Beata

    2018-06-01

    The negative thermal expansion (NTE) property was a prototype to discuss the origin of difference between classical Debye relaxation process and the non-Debye behavior in the layered perovskite halide salt of chemical formula NH3(CH2)3NH3CdBr4. The analysis has been taken by dielectric relaxation spectroscopy measurements in almost six decades in frequency 5 × 102 ≤ f(ω) ≤ 1.2 × 108 and in the temperature range 315 ≤ T(K) ≤ 390. It was shown that the investigated sample exhibit an antiferrodistortive nature of phase transition between two orthorhombic structural modifications i.e. Pnma (phase I) and Ima2 (phase II) at Tc1(I → II) = 326 K, leading from an antiferroelectric to a paraelectric phase. The involvement of an odd number of carbon atoms in the alkylammonium chains in dielectric properties of examined sample is proved. Higher structural modifications, i.e. Ima2 (phase II) and P21/m (phase III), have shown significant deviations from a regular circle on the Cole-Cole diagram. Presented experimental observations are essentially important for the theoretical explanation of relaxation processes in analyzed organic - inorganic compound crystallizing in a perovskite-like topology and may provide new perspective on the fundamental aspect of relaxation response in "diammonium" series.

  14. Optimal Super Dielectric Material

    Science.gov (United States)

    2015-09-01

    plate capacitor will reduce the net field to an unprecedented extent. This family of materials can form materials with dielectric values orders of... Capacitor -Increase Area (A)............8 b. Multi-layer Ceramic Capacitor -Decrease Thickness (d) .......10 c. Super Dielectric Material-Increase...circuit modeling, from [44], and B) SDM capacitor charge and discharge ...................................................22 Figure 15. Dielectric

  15. Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

    International Nuclear Information System (INIS)

    Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

    2015-01-01

    A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples

  16. Angle-resolved photoemission extended fine structure: Multiple layers of emitters and multiple initial states

    International Nuclear Information System (INIS)

    Huff, W.R.A.; Kellar, S.A.; Moler, E.J.; California Univ., Berkeley, CA; Chen, Y.; Wu, H.; Shirley, D.A.; Hussain, Z.

    1995-01-01

    Recently, angle-resolved photoemission extended fine structure (ARPEFS) has been applied to experimental systems involving multiple layers of emitters and non-s core-level photoemission in an effort to broaden the utility of the technique. Most of the previous systems have been comprised of atomic or molecular overlayers adsorbed onto a single-crystal, metal surface and the photoemission data were taken from an s atomic core-level in the overlayer. For such a system, the acquired ARPEFS data is dominated by the p o final state wave backscattering from the substrate atoms and is well understood. In this study, we investigate ARPEFS as a surface-region structure determination technique when applied to experimental systems comprised of multiple layers of photoemitters and arbitrary initial state core-level photoemission. Understanding the data acquired from multiple layers of photoemitters is useful for studying multilayer interfaces, ''buried'' surfaces, and clean crystals in ultra- high vacuum. The ability to apply ARPEFS to arbitrary initial state core-level photoemission obviously opens up many systems to analysis. Efforts have been ongoing to understand such data in depth. We present clean Cu(111) 3s, 3p, and 3d core-level, normal photoemission data taken on a high resolution soft x-ray beamline 9.3.2 at the Advanced Light Source in Berkeley, California and clean Ni(111) 3p normal photoemission data taken at the National Synchrotron Light Source in Upton, New York, USA

  17. Diamagneto-Dielectric Anisotropic Wide Angle Impedance Matching Layers for Active Phased Arrays

    NARCIS (Netherlands)

    Silvestri, F.; Cifola, L.; Gerini, G.

    2016-01-01

    In this paper, we present the full process of designing anisotropic metamaterial (MM) wide angle impedance matching (WAIM) layers. These layers are used to reduce the scan losses that occur in active phased arrays for large scanning angles. Numerical results are provided to show the improvement in

  18. Diamagneto-dielectric anisotropic wide angle impedance matching layers for active phased arrays

    NARCIS (Netherlands)

    Silvestri, F.; Cifola, L.; Gerini, G.

    2016-01-01

    In this paper we present the full process of designing anisotropic metamaterial (MM) wide angle impedance matching (WAIM) layers. These layers are used to reduce the scan losses that occur in active phased arrays for large scanning angles. Numerical results are provided to show the improvement in

  19. Cast dielectric composite linear accelerator

    Science.gov (United States)

    Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  20. Single-crystal micromachining using multiple fusion-bonded layers

    Science.gov (United States)

    Brown, Alan; O'Neill, Garry; Blackstone, Scott C.

    2000-08-01

    Multi-layer structures have been fabricated using Fusion bonding. The paper shows void free layers of between 2 and 100 microns that have been bonded to form multi-layer structures. Silicon layers have been bonded both with and without interfacial oxide layers.

  1. Raman spectroscopy and dielectric Studies of multiple phase transitions in ZnO:Ni

    Science.gov (United States)

    Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay; Scott, J. F.; Katiyar, R. S.

    2008-03-01

    We present Raman and dielectric data on Ni-doped ZnO (Zn1-xNixO) ceramics as a function of Ni concentration (x =0.03, 0.06, and 0.10) and temperature. A mode (around 130cm-1) is identified as TA(M) [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)] and appears due to an antiferromagnetic phase transition at low temperatures (100K) via the spin-orbit mechanism [P. Moch and C. Dugautier, Phys. Lett. A 43, 169 (1973)]. A strong dielectric anomaly occurs at around 430-460K, depending on Ni concentration, and is due to extrinsic electret effects (Ni ionic conduction) and not to a ferroelectric phase transition.

  2. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  3. On interaction of P-waves with one-dimensional photonic crystal consisting of weak conducting matter and transparent dielectric layers

    Science.gov (United States)

    Yushkanov, A. A.; Zverev, N. V.

    2018-03-01

    An influence of quantum and spatial dispersion properties of the non-degenerate electron plasma on the interaction of electromagnetic P-waves with one-dimensional photonic crystal consisting of conductor with low carrier electron density and transparent dielectric matter, is studied numerically. It is shown that at the frequencies of order of the plasma frequency and at small widths of the conducting and dielectric layers of the photonic crystal, optical coefficients in the quantum non-degenerate plasma approach differ from the coefficients in the classical electron gas approach. And also, at these frequencies one observes a temperature dependence of the optical coefficients.

  4. Effect of gradient dielectric coefficient in a functionally graded material (FGM) substrate on the propagation behavior of love waves in an FGM-piezoelectric layered structure.

    Science.gov (United States)

    Cao, Xiaoshan; Shi, Junping; Jin, Feng

    2012-06-01

    The propagation behavior of Love waves in a layered structure that includes a functionally graded material (FGM) substrate carrying a piezoelectric thin film is investigated. Analytical solutions are obtained for both constant and gradient dielectric coefficients in the FGM substrate. Numerical results show that the gradient dielectric coefficient decreases phase velocity in any mode, and the electromechanical coupling factor significantly increases in the first- and secondorder modes. In some modes, the difference in Love waves' phase velocity between these two types of structure might be more than 1%, resulting in significant differences in frequency of the surface acoustic wave devices.

  5. Studies of plasmonic hot-spot translation by a metal-dielectric layered superlens

    DEFF Research Database (Denmark)

    Thoreson, Mark D.; Nielsen, Rasmus Bundgaard; West, Paul R.

    2011-01-01

    at a wavelength of about 680 nm. Specifically, we discuss our recent experimental and simulation results on the translation of hot spots using a silver-silica layered superlens design. We compare the experimental results with our numerical simulations and discuss the perspectives and limitations of our approach....... optical nanoantennas as sources, we investigated the translation of these sources to the far side of a layered silver-silica superlens operating in the canalization regime. Using near-field scanning optical microscopy (NSOM), we have observed evidence of superlens-enabled enhanced-field translation...

  6. Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

    Science.gov (United States)

    Hourdakis, Emmanouel; Nassiopoulou, Androula G.

    2017-07-01

    Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

  7. Dielectric relaxation dependent memory elements in pentacene/[6,6]-phenyl-C61-butyric acid methyl ester bi-layer field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Park, Byoungnam

    2015-03-02

    We fabricate a pentacene/[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) bi-layer field effect transistor (FET) featuring large hysteresis that can be used as memory elements. Intentional introduction of excess electron traps in a PCBM layer by exposure to air caused large hysteresis in the FET. The memory window, characterized by the threshold voltage difference, increased upon exposure to air and this is attributed to an increase in the number of electron trapping centers and (or) an increase in the dielectric relaxation time in the underlying PCBM layer. Decrease in the electron conduction in the PCBM close to the SiO{sub 2} gate dielectric upon exposure to air is consistent with the increase in the dielectric relaxation time, ensuring that the presence of large hysteresis in the FET originates from electron trapping at the PCBM not at the pentacene. - Highlights: • Charge trapping-induced memory effect was clarified using transistors. • The memory window can be enhanced by controlling charge trapping mechanism. • Memory transistors can be optimized by controlling dielectric relaxation time.

  8. Wet chemical preparation of YVO{sub 4}:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp

    Energy Technology Data Exchange (ETDEWEB)

    Klausch, A. [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany); Althues, H. [Fraunhofer Institute for Material and Beam Technology Winterbergstr. 28, 01309 Dresden (Germany); Freudenberg, T. [Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden (Germany); Kaskel, S., E-mail: Stefan.Kaskel@chemie.tu-dresden.de [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany)

    2012-04-30

    Highly transparent YVO{sub 4}:Eu thin films were deposited via dip coating of liquid nanoparticle dispersions on glass substrates. Annealing of the nanoparticle layers resulted in restructuring of the material into oriented crystalline films. The crystallinity was confirmed using powder X-ray diffraction. Film thickness was adjusted to 467 nm by multiple deposition. The resulting coatings show > 99% absorbance for wavelength below 300 nm and > 90% transmission in the visible spectral range. Under UV-light excitation a bright red photoluminescence with a quantum efficiency of 20% is observed. A planar, transparent dielectric barrier discharge lamp was constructed using YVO{sub 4}:Eu coated glasses and transparent electrodes made from antimony-doped tin dioxide thin films. - Highlights: Black-Right-Pointing-Pointer Preparation of highly transparent Eu{sup 3+} doped YVO{sub 4} phosphor thin films. Black-Right-Pointing-Pointer Improved crystallinity and optical properties through heat treatment. Black-Right-Pointing-Pointer Red emitting films on glass substrates were combined with antimony tin oxide thin films. Black-Right-Pointing-Pointer Fully transparent, planar gas discharge lamp as prototype for a light emitting window.

  9. Structural and dielectric properties of four - layer Aurivillius - type Ba0.25Sr0.75Bi4Ti4O15 ceramics

    International Nuclear Information System (INIS)

    Goyal, Parveen K.; Khokhar, Anita; Sreenivas, K.

    2013-01-01

    In the present study, a barium strontium bismuth titanate (Ba 0.25 Sr 0.75 Bi 4 Ti 4 O 15 , BSBT) ceramic composition has been prepared by conventional solid-state reaction. In order to study the structure of as synthesized BSBT ceramics, the X-ray powder diffraction (XRD), Raman and FTIR studies have been carried out on the powdered sample. X-ray diffraction analysis confirms the formation of a single phase four-layer Aurivillius-type ceramics that crystallizes in an orthorhombic structure with A2 1 am space group. The dielectric properties of the ceramics have been studied in the temperature range 30 - 600℃ temperature range at various frequencies (100 Hz to 1 MHz). A sharp dielectric anomaly was observed at ∼ 485℃ at all the frequencies corresponding to the ferroelectric to paraelectric phase transition. The ferroelectric behavior is confirmed from the Curie-Weiss law fitting of the dielectric data. (author)

  10. Sensitivity of imaging properties of metal-dielectric layered flat lens to fabrication inaccuracies

    DEFF Research Database (Denmark)

    Kotynski, R.; Baghdasaryan, H.; Stefaniuk, T.

    2010-01-01

    We characterize the sensitivity of imaging properties of a layered silver-TiO2 flat lens to fabrication inaccuracies. The lens is designed for approximately diffraction-free imaging with subwavelength resolution at distances in the order of a wavelength. Its operation may be attributed to self......-collimation with a secondary role of Fabry-Perot resonant transmission, even though the first order effective medium description of the structure is inaccurate. Super-resolution is maintained for a broad range of overall thicknesses and the total thickness of the multilayer is limited by absorption. The tolerance analysis...... indicates that the resolution and transmission efficiency are highly sensitive to small changes of layer thicknesses....

  11. Quasi-effective medium theory for multi-layered magneto-dielectric structures

    International Nuclear Information System (INIS)

    Genov, Dentcho A; Mundru, Pattabhiraju C

    2014-01-01

    We present a quasi-effective medium theory that determines the optical properties of multi-layered composites beyond the quasi-static limit. The proposed theory exactly reproduces the far field scattering/extinction cross sections through an iterative process in which mode-dependent quasi-effective impedances of the composite system are introduced. In the large wavelength limit our theory is consistent with the Maxwell–Garnett formalism. Possible applications in determining the hybridization particle resonances of multi-shell structures and electromagnetic cloaking are identified. (paper)

  12. Two-dimensional optical simulation on a visible ray passing through inter-metal dielectric layers of CMOS image sensor device

    International Nuclear Information System (INIS)

    Lee, Wan-Gyu; Kim, Jun-Seok; Kim, Hee-Jeen; Kim, Sang-Young; Hwang, Sung-Bo; Lee, Jeong-Gun

    2005-01-01

    Two-dimensional optical simulation has been performed for investigating light propagation through a micro lens and inter-metal dielectric (IMD) layers in an Al and Cu back-end of line (BEOL) onto a Si photodiode, and its effects on the wave power, as well as optical carriers generated by a visible ray in the silicon substrate area, i.e. photodiode of a CMOS image sensor pixel. The number of optically generated carriers in an Al-BEOL has been compared to a Cu-BEOL. It is shown that more optical carriers are generated in the Cu-BEOL for the red color because a higher permittivity dielectric material like SiC is used in the Cu-BEOL to prevent Cu from diffusing into the dielectric material, resulting in higher optical loss in the higher- permittivity dielectric layers. Thus, the optical power density arriving in the silicon substrate is higher in the Al-BEOL than in the Cu-BEOL when the wavelength is blue (470 nm) or green (550 nm) in the visible ray spectrum. In conclusion, the structure of a Cu-BEOL in a CMOS image sensor has to be optimized for generating more optical carriers through lower-permittivity IMD materials or by reducing the permittivity difference between SiC (or SiN) and IMD materials, without deteriorating the capability as a barrier to Cu diffusion.

  13. Identification of nanostructural development in epoxy polymer layered silicate nanocomposites from the interpretation of differential scanning calorimetry and dielectric spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Roman, Frida, E-mail: roman@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain); Calventus, Yolanda, E-mail: calventus@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain); Colomer, Pere, E-mail: colomer@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain); Hutchinson, John M., E-mail: hutchinson@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain)

    2012-08-10

    Highlights: Black-Right-Pointing-Pointer Comparison of DSC and DRS in the cure of epoxy nanocomposites. Black-Right-Pointing-Pointer Dependence of exfoliation of nanocomposite on clay content. Black-Right-Pointing-Pointer Anionically initiated homopolymerisation in PLS nanocomposites. - Abstract: The effect of nanoclay on the non-isothermal cure kinetics of polymer layered silicate nanocomposites based upon epoxy resin is studied by calorimetric techniques (DSC and TGA) and by dielectric relaxation spectroscopy (DRS) in non-isothermal cure at constant heating rate. The cure process takes place by homopolymerisation, initiated anionically using 3 wt% dimethylaminopyridine (DMAP), and the influence of the nanoclay content has been analysed. Interesting differences are observed between the nanocomposites with 2 wt% and 5 wt% clay content. At low heating rates, these samples vitrify and then devitrify during the cure. For the sample with 2 wt% clay, the devitrification is accompanied by a thermally initiated homopolymerisation, which can be identified by DRS but not by DSC. The effect of this is to improve the exfoliation of the nanocomposite with 2 wt% clay, as verified by transmission electron microscopy, with a corresponding increase in the glass transition temperature. These observations are interpreted in respect of the nanocomposite preparation method and the cure kinetics.

  14. Identification of nanostructural development in epoxy polymer layered silicate nanocomposites from the interpretation of differential scanning calorimetry and dielectric spectroscopy

    International Nuclear Information System (INIS)

    Román, Frida; Calventus, Yolanda; Colomer, Pere; Hutchinson, John M.

    2012-01-01

    Highlights: ► Comparison of DSC and DRS in the cure of epoxy nanocomposites. ► Dependence of exfoliation of nanocomposite on clay content. ► Anionically initiated homopolymerisation in PLS nanocomposites. - Abstract: The effect of nanoclay on the non-isothermal cure kinetics of polymer layered silicate nanocomposites based upon epoxy resin is studied by calorimetric techniques (DSC and TGA) and by dielectric relaxation spectroscopy (DRS) in non-isothermal cure at constant heating rate. The cure process takes place by homopolymerisation, initiated anionically using 3 wt% dimethylaminopyridine (DMAP), and the influence of the nanoclay content has been analysed. Interesting differences are observed between the nanocomposites with 2 wt% and 5 wt% clay content. At low heating rates, these samples vitrify and then devitrify during the cure. For the sample with 2 wt% clay, the devitrification is accompanied by a thermally initiated homopolymerisation, which can be identified by DRS but not by DSC. The effect of this is to improve the exfoliation of the nanocomposite with 2 wt% clay, as verified by transmission electron microscopy, with a corresponding increase in the glass transition temperature. These observations are interpreted in respect of the nanocomposite preparation method and the cure kinetics.

  15. Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

    Science.gov (United States)

    Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

    2018-04-01

    Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

  16. Control of thermal deformation in dielectric mirrors using mechanical design and atomic layer deposition.

    Science.gov (United States)

    Gabriel, Nicholas T; Kim, Sangho S; Talghader, Joseph J

    2009-07-01

    A mechanical design technique for optical coatings that simultaneously controls thermal deformation and optical reflectivity is reported. The method requires measurement of the refractive index and thermal stress of single films prior to the design. Atomic layer deposition was used for deposition because of the high repeatability of the film constants. An Al2O3/HfO2 distributed Bragg reflector was deposited with a predicted peak reflectivity of 87.9% at 542.4 nm and predicted edge deformation of -360 nm/K on a 10 cm silicon substrate. The measured peak reflectivity was 85.7% at 541.7 nm with an edge deformation of -346 nm/K.

  17. Onset of Bonding Plasmon Hybridization Preceded by Gap Modes in Dielectric Splitting of Metal Disks

    DEFF Research Database (Denmark)

    Frederiksen, Maj; Bochenkov, Vladimir; Ogaki, Ryosuke

    2013-01-01

    Dielectric splitting of nanoscale disks was studied experimentally and via finite-difference time-domain (FDTD) simulations through systematic introduction of multiple ultrathin dielectric layers. Tunable, hybridized dark bonding modes were seen with first-order gap modes preceding the appearance...

  18. Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors

    International Nuclear Information System (INIS)

    Hong, Suk-Kyoung; Yang, B.; Oh, Sang Hyun; Kang, Young Min; Kang, Nam Soo; Hwang, Cheol Seong; Kwon, Oh Seong

    2001-01-01

    The thermal stress effects of the inter-level dielectric (ILD) layer on the ferroelectric performance of integrated Pt/SrBi 2 Ta 2 O 9 (SBT)/Pt capacitors were investigated. Two different thin film materials, pure SiO 2 grown at 650 degree C and B- and P-doped SiO 2 grown at 400 degree C by chemical vapor deposition techniques, were tested as an ILD layer. The ILD layer encapsulated the SBT capacitor array. During high temperature thermal cycling (up to 800 degree C) after ILD deposition, which is used for both densifying the ILD and curing of the various damage imposed on the SBT capacitors, a large thermal stress occurred in the bottom Pt layer due to the thermal expansion mismatch between the various layers. In particular, the pure SiO 2 ILD layer between the capacitors did not allow thermal expansion of the Pt layers, which led to a large accumulation of compressive stress in the layer. This resulted in hillock formation in the bottom Pt layer and eventual capacitor failure. However, the B- and P-doped SiO 2 ILD layer contracted during thermal cycling by removing residual impurities, which allowed greater expansion of the Pt layer. Therefore, compressive stress accumulation did not occur and excellent ferroelectric properties were thus obtained from the integrated capacitor array. [copyright] 2001 American Institute of Physics

  19. Multiple pass and multiple layer friction stir welding and material enhancement processes

    Science.gov (United States)

    Feng, Zhili [Knoxville, TN; David, Stan A [Knoxville, TN; Frederick, David Alan [Harriman, TN

    2010-07-27

    Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

  20. Fracture resistance enhancement of layered structures by multiple cracks

    DEFF Research Database (Denmark)

    Goutianos, Stergios; Sørensen, Bent F.

    2016-01-01

    A theoretical model is developed to test if the fracture resistance of a layered structure can be increased by introducing weak layers changing the cracking mechanism. An analytical model, based on the J integral, predicts a linear dependency between the number of cracks and the steady state...... fracture resistance. A finite element cohesive zone model, containing two cracking planes for simplicity, is used to check the theoretical model and its predictions. It is shown that for a wide range of cohesive law parameters, the numerical predictions agree well quantitatively with the theoretical model....... Thus, it is possible to enhance considerably the fracture resistance of a structure by adding weak layers....

  1. Nanoscale multiple gaseous layers on a hydrophobic surface.

    Science.gov (United States)

    Zhang, Lijuan; Zhang, Xuehua; Fan, Chunhai; Zhang, Yi; Hu, Jun

    2009-08-18

    The nanoscale gas state at the interfaces of liquids (water, acid, and salt solutions) and highly oriented pyrolytic graphite (HOPG) was investigated via tapping-mode atomic force microscopy (AFM). For the first time, we report that the interfacial gases could form bilayers and trilayers, i.e., on the top of a flat gas layer, there are one or two more gas layers. The formation of these gas layers could be induced by a local supersaturation of gases, which can be achieved by (1) temperature difference between the liquids and the HOPG substrates or (2) exchange ethanol with water. Furthermore, we found that the gas layers were less stable than spherical bubbles. They could transform to bubbles with time or under the perturbation of the AFM tip.

  2. Modeling of CMUTs with Multiple Anisotropic Layers and Residual Stress

    DEFF Research Database (Denmark)

    Engholm, Mathias; Thomsen, Erik Vilain

    2014-01-01

    Usually the analytical approach for modeling CMUTs uses the single layer plate equation to obtain the deflection and does not take anisotropy and residual stress into account. A highly accurate model is developed for analytical characterization of CMUTs taking an arbitrary number of layers...... and residual stress into account. Based on the stress-strain relation of each layer and balancing stress resultants and bending moments, a general multilayered anisotropic plate equation is developed for plates with an arbitrary number of layers. The exact deflection profile is calculated for a circular...... clamped plate of anisotropic materials with residual bi-axial stress. From the deflection shape the critical stress for buckling is calculated and by using the Rayleigh-Ritz method the natural frequency is estimated....

  3. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

    Science.gov (United States)

    Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

    2017-03-29

    A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

  4. Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

    Science.gov (United States)

    Jung, Byung Jun; Martinez Hardigree, Josue F; Dhar, Bal Mukund; Dawidczyk, Thomas J; Sun, Jia; See, Kevin Cua; Katz, Howard E

    2011-04-26

    We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 μA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 μm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.

  5. Surface Passivation by Quantum Exclusion Using Multiple Layers

    Science.gov (United States)

    Hoenk, Michael E. (Inventor)

    2015-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

  6. Modeling of plates with multiple anisotropic layers and residual stress

    DEFF Research Database (Denmark)

    Engholm, Mathias; Pedersen, Thomas; Thomsen, Erik Vilain

    2016-01-01

    Usually the analytical approach for modeling of plates uses the single layer plate equation to obtain the deflection and does not take anisotropy and residual stress into account. Based on the stress–strain relation of each layer and balancing stress resultants and bending moments, a general...... multilayered anisotropic plate equation is developed for plates with an arbitrary number of layers. The exact deflection profile is calculated for a circular clamped plate of anisotropic materials with residual bi-axial stress.From the deflection shape the critical stress for buckling is calculated......, and an excellent agreement between the two models is seen with a relative difference of less than 2% for all calculations. The model was also used to extract the cell capacitance, the parasitic capacitance and the residual stress of a pressure sensor composed of a multilayered plate of silicon and silicon oxide...

  7. Effectiveness of monopolar dielectric transmission of pulsed electromagnetic fields for multiple sclerosis-related pain: A pilot study.

    Science.gov (United States)

    Hochsprung, A; Escudero-Uribe, S; Ibáñez-Vera, A J; Izquierdo-Ayuso, G

    2018-05-08

    Pain is highly prevalent in patients with multiple sclerosis (MS); it is chronic in 50% of cases and is classified as nociceptive, neuropathic, or mixed-type. Pain affects quality of life, sleep, and the activities of daily living. Electrotherapy is an interesting alternative or complementary treatment in the management of pain in MS, with new innovations constantly appearing. This study evaluates the effectiveness of treatment with monopolar dielectric transmission of pulsed electromagnetic fields (PEMF) for pain associated with MS. We performed a randomised, placebo-controlled clinical trial including 24 patients, who were assessed with the Brief Pain Inventory, the Multiple Sclerosis International Quality of Life questionnaire, the Beck Depression Inventory, and the Modified Fatigue Impact Scale. Statistically significant improvements were observed in maximum and mean pain scores, as well as in the impact of pain on work, personal relationships, and sleep and rest. Not significant differences were found between the treatment and placebo groups. Treatment with PEMF may be effective in reducing pain in patients with MS, although further research is necessary to confirm its effectiveness over placebo and to differentiate which type of pain may be more susceptible to this treatment. Copyright © 2018 Sociedad Española de Neurología. Publicado por Elsevier España, S.L.U. All rights reserved.

  8. Sloshing analysis of tanks containing multiple fluid layers

    International Nuclear Information System (INIS)

    Uras, R.A.; Tang, Yu.

    1994-01-01

    The effect of liquid density changes in high level radioactive liquid waste storage tanks is studied. The density variations with the liquid depth is modeled by layers of piece wise constant densities. A computational formulation based on the finite element method is presented. The computer code FLUSTR-ANL has been modified for the analysis of the sloshing response under seismic excitation

  9. Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

    Science.gov (United States)

    Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

    2018-01-22

    A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

  10. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-12-14

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

  11. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-01-01

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

  12. Electric-double-layer potential distribution in multiple-layer immiscible electrolytes

    NARCIS (Netherlands)

    Das, S.; Hardt, Steffen

    2011-01-01

    In this Brief Report, we calculate the electric-double-layer (EDL) electrostatic potential in a system of several layers of immiscible electrolytes. Verwey-Niessen theory predicts that at the interface between two immiscible electrolytes back-to-back EDLs are formed. The present analysis extends

  13. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  14. Investigating the effect of multiple layers of insulation with a bubble wrap experiment

    Science.gov (United States)

    Eggers, Dolores; Ruiz, Michael J.

    2018-03-01

    We provide a fun, inexpensive laboratory experiment for students to investigate the effects of multiple layers of insulation and observe diminishing values for additional layers using bubble wrap. This experiment provides an opportunity for students to learn about heat transfer through conduction using readily available materials. A water-ice pack is placed on top of five layers of bubble wrap. The temperature is taken between each layer periodically for at least 15 min. Students determine asymptotic temperatures for varying layers. This experiment also suggests a real world application.

  15. Influence of temperature on the dielectric nonlinearity of BaTiO{sub 3}-based multi-layer ceramic capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Seok-Hyun, E-mail: seokhyun72.yoon@samsung.com; Kim, Mi-Yang [LCR Materials Group, Corporate R& D Institute, Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-Do 443-743 (Korea, Republic of)

    2016-06-13

    Temperature dependence of the dielectric nonlinearity was investigated for the BaTiO{sub 3} multilayer ceramic capacitor. The decrease in temperature caused a significant increase in the degree of dielectric nonlinearity. The Preisach analysis shows that such effect corresponds to a decrease in reversible and a significant increase in irreversible domain wall contribution to polarization. The magnitude of spontaneous polarization (P{sub S}) was increased with decreasing temperature. It can be associated with phase transition from pseudo-cubic to monoclinic and its resultant change in the polar direction, which was observed through transmission electron microscopy. These results demonstrate that the increase in P{sub S} with the decrease in temperature inhibits domain wall motion in low driving field as it is anticipated to increase the degree of intergranular constraints during domain wall motion. But it results in a more steep increase in the dielectric constants beyond the threshold field where domain wall motion can occur.

  16. The formation of multiple layers of ice particles in the polar summer mesopause region

    Directory of Open Access Journals (Sweden)

    H. Li

    2016-01-01

    Full Text Available This paper presents a two-dimensional theoretical model to study the formation process of multiple layers of small ice particles in the polar summer mesosphere as measured by rockets and associated with polar mesosphere summer echoes (PMSE. The proposed mechanism primarily takes into account the transport processes induced by gravity waves through collision coupling between the neutral atmosphere and the ice particles. Numerical solutions of the model indicate that the dynamic influence of wind variation induced by gravity waves can make a significant contribution to the vertical and horizontal transport of ice particles and ultimately transform them into thin multiple layers. Additionally, the pattern of the multiple layers at least partially depends on the vertical wavelength of the gravity wave, the ice particle size and the wind velocity. The results presented in this paper will be helpful to better understand the occurrence of multiple layers of PMSE as well as its variation process.

  17. Comparative evaluation of concrete sealers and multiple layer polymer concrete overlays. Interim report no. 1.

    Science.gov (United States)

    1987-01-01

    The report presents comparisons of initial evaluations of several concrete sealers and multiple layer polymer concrete overlays. The sealers evaluated included a solvent-dlspersed epoxy, a water-dlspersed epoxy, a silane, and a high molecular weight ...

  18. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

    International Nuclear Information System (INIS)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-01-01

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene–graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm 2  V −1  s −1 and a threshold voltage of −0.7 V at V gs = −40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm 2  V −1  s −1 and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies. (paper)

  19. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

    Science.gov (United States)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-02-28

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

  20. Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

    Energy Technology Data Exchange (ETDEWEB)

    Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen [Key Lab of Materials Modification, Dalian University of Technology, Ministry of Education, Dalian 116024 (China)

    2013-05-13

    Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

  1. Solution-processed high-LUMO-level polymers in n-type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

    International Nuclear Information System (INIS)

    Liu, Chuan; Xu, Yong; Liu, Xuying; Minari, Takeo; Sirringhaus, Henning; Noh, Yong-Young

    2015-01-01

    In solution-processed organic field-effect transistors (OFETs), the polymers with high level of lowest unoccupied molecular orbitals (LUMOs, > −3.5 eV) are especially susceptible to electron-trapping that causes low electron mobility and strong instability in successive operation. However, the role of high-LUMO-level polymers could be different depending on their locations relative to the semiconductor/insulator interface, or could even possibly benefit the device in some cases. We constructed unconventional polymer heterojunction n-type OFETs to control the location of the same polymer with a high LUMO level, to be in, under, or above the accumulation channel. We found that although the devices with the polymer in the channel suffer from dramatic instability, the same polymer causes much less instability when it acts as a dielectric modification layer or charge injection layer. Especially, it may even improve the device performance in the latter case. This result helps to improve our understanding of the electron-trapping and explore the value of these polymers in OFETs. (invited article)

  2. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    Science.gov (United States)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  3. Optical anisotropy of layered metal-dielectric nanostructures based on dense 2D-arrays of silver nanoparticles

    International Nuclear Information System (INIS)

    Jeshchenko, O.A.

    2013-01-01

    The spatial and polarization anisotropy of extinction spectra of parallel dense 2D-monolayers of Ag nanoparticles separated by dielectric films is theoretically studied. The dependences are interpreted as a result of collectivization of surface plasmon modes occurring due to strong dipole-dipole coupling silver nanoparticles

  4. Double-Layer Low-Density Parity-Check Codes over Multiple-Input Multiple-Output Channels

    Directory of Open Access Journals (Sweden)

    Yun Mao

    2012-01-01

    Full Text Available We introduce a double-layer code based on the combination of a low-density parity-check (LDPC code with the multiple-input multiple-output (MIMO system, where the decoding can be done in both inner-iteration and outer-iteration manners. The present code, called low-density MIMO code (LDMC, has a double-layer structure, that is, one layer defines subcodes that are embedded in each transmission vector and another glues these subcodes together. It supports inner iterations inside the LDPC decoder and outeriterations between detectors and decoders, simultaneously. It can also achieve the desired design rates due to the full rank of the deployed parity-check matrix. Simulations show that the LDMC performs favorably over the MIMO systems.

  5. Rendering Intelligence at Physical Layer for Smart Addressing and Multiple Access

    DEFF Research Database (Denmark)

    Sanyal, Rajarshi; Prasad, Ramjee; Cianca, Ernestina

    2010-01-01

    addressing of a node. For a typical closed user group type of network, we propose a multiple access mechanism and network topology which will not only eliminate the need of intelligent core network equipments in the network area , but to use this intelligent physical layer to directly reach any node over......The primary objective of this work is to propose a technique of wireless communication, where we render intelligence to the physical layer. We aim to realize a physical layer that can take part in some processes which is otherwise confined to higher layer signalling activities, like for example...... the fundamentals behind the proposed multiple access scheme and draws out the benefits compared to the existing multiple access processes based on cellular approach....

  6. Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.

    Science.gov (United States)

    Zhao, Qiang; Wang, Hanlin; Ni, Zhenjie; Liu, Jie; Zhen, Yonggang; Zhang, Xiaotao; Jiang, Lang; Li, Rongjin; Dong, Huanli; Hu, Wenping

    2017-09-01

    Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm 2 V -1 s -1 (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm 2 V -1 s -1 (average) for N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN 2 ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Jiang, Aiting; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Lu, Sirong; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  8. Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field

    Energy Technology Data Exchange (ETDEWEB)

    Mammadov, F. M. [Azerbaijan National Academy of Sciences, Nagiyev Institute of Catalysis and Inorganic Chemistry (Azerbaijan); Niftiyev, N. N., E-mail: namiq7@bk.ru [Azerbaijan State Pedagogical University (Azerbaijan)

    2016-09-15

    The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS{sub 4} single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS{sub 4} single crystals in a field with frequencies of 10{sup 4}–10{sup 6} Hz decrease inversely proportional to the frequency (tanδ ~ 1/ω), and the conductivity is characterized by the band–hopping mechanism. For FeGaInS{sub 4}, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.

  9. Electric and dielectric behavior of copper-chromium layered double hydroxide intercalated with dodecyl sulfate anions using impedance spectroscopy

    Science.gov (United States)

    Elhatimi, Wafaa; Bouragba, Fatima Zahra; Lahkale, Redouane; Sadik, Rachid; Lebbar, Nacira; Siniti, Mostapha; Sabbar, Elmouloudi

    2018-05-01

    The Cu2Cr-DS-LDH hybrid was successfully prepared by the anion exchange method at room temperature. The structure, the chemical composition and the physico-chemical properties of the sample were determined using powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA) and inductively coupled plasma (ICP). In this work, the electrical and dielectric properties investigated are determined using impedance spectroscopy (IS) in a frequency range of 1 Hz to 1 MHz. Indeed, the Nyquist diagram modelized by an electrical equivalent circuit showed three contributions attributed respectively to the polarization of grains, grains boundaries and interface electrode-sample. This modelization allowed us to determine the intrinsic electrical parameters of the hybrid (resistance, pseudo-capacitance and relaxation time). The presence of the non-Debye relaxation phenomena was confirmed by the frequency analysis of impedance. Moreover, the evolution of the alternating current conductivity (σac) studied obeys the double power law of Jonscher. The ionic conduction of this material was generated through a jump movement by translation of the charge carriers. As for the dielectric behavior of the material, the evolution of dielectric constant as a function of frequency shows relatively high values in a frequency range between 10 Hz and 1 KHz. The low values of the loss tangent obtained in this frequency zone can valorize this LDH hybrid.

  10. Cross-Layer Design for Two-Way Relaying Networks with Multiple Antennas

    Directory of Open Access Journals (Sweden)

    zhuo wu

    2015-10-01

    Full Text Available In this paper, we developed a cross-layer design for two-way relaying (TWR networks with multiple antennas, where two single antenna source nodes exchange information with the aid of one multiple antenna relay node. The proposed cross-layer design considers adaptive modulation (AM and space-time block coding (STBC at the physical layer with an automatic repeat request (ARQ protocol at the data link layer, in order to maximize the spectral efficiency under specific delay and packet error ratio (PER constraints. An MMSE-interference cancellation (IC receiver is employed at the relay node, to remove the interference in the fist phase of the TWR transmission. The transmission mode is updated for each phase of the TWR transmission on a frame-by-frame basis, to match the time-varying channel conditions and exploit the system performance and throughput gain. Simulation results show that retransmission at the data link layer could alleviate rigorous error-control requirements at the physical layer, and thereby allows higher data transmission. As a result, cross-layer design helps to achieve considerable system spectral efficiency gain for TWR networks, compared to those without cross-layer design.

  11. Laser sintering of metal powders on top of sintered layers under multiple-line laser scanning

    International Nuclear Information System (INIS)

    Xiao Bin; Zhang Yuwen

    2007-01-01

    A three-dimensional numerical model for multiple-line sintering of loose powders on top of multiple sintered layers under the irradiation of a moving Gaussian laser beam is carried out. The overlaps between vertically deposited layers and adjacent lines which strengthen bonding are taken into account. The energy equation is formulated using the temperature transforming model and solved by the finite volume method. The effects of the number of the existing sintered layers, porosity and initial temperature coupled with the optimal combination laser intensity and scanning velocity are presented. The results show that the liquid pool moves slightly towards the negative scanning direction and the shape of the liquid pool becomes shallower with higher scanning velocity. A higher laser intensity is needed to achieve the required overlaps when the number of the existing sintered layers increases. Increasing porosity or initial temperature enhances the sintering process and thus less intensity is needed for the overlap requirement

  12. Investigations of Magnetic Structural Phase Transition of Layered Systems by Moessbauer Effect and by Dielectric Constant Measurements

    International Nuclear Information System (INIS)

    Mulhem, J.; Mostafa, M.; Shaban, H.

    2002-01-01

    Moessbauer Effect (ME) of compounds like (C n H 2 N +1 NH 3 ) 2 -Fe(Π)CL 4 and (CH 2 ) 6 (NH 3 ) 2 Fe(Π)CL 4 have been measured. The results indicate a conted spin antiferromagnet, with transition temperatures and magnetic field strengths according to value of n. Dielectric constant measurements of the above compounds as afunction of temperatures at different selected frequencies also have been carried out. The results confirm existence of structural phase transition shown by Me. (Author's) 10 refs., 6 figs., 1 tab

  13. Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

    Science.gov (United States)

    Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

    2017-01-24

    To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

  14. High-current electron beam coupling to hybrid waveguide and plasma modes in a dielectric Cherenkov maser with a plasma layer

    International Nuclear Information System (INIS)

    Shlapakovski, Anatoli S.

    2002-01-01

    The linear theory of a dielectric Cherenkov maser with a plasma layer has been developed. The dispersion relation has been derived for the model of infinitely thin, fully magnetized, monoenergetic hollow electron beam, in the axisymmetric case. The results of the numerical solution of the dispersion relation and the analysis of the beam coupling to hybrid waves, both hybrid waveguide and hybrid plasma modes, are presented. For the hybrid waveguide mode, spatial growth rate dependences on frequency at different plasma densities demonstrate improvement in gain for moderate densities, but strong shifting the amplification band and narrowing the bandwidth. For the hybrid plasma mode, the case of mildly relativistic, 200-250 keV beams is of interest, so that the wave phase velocity is just slightly greater than the speed of light in a dielectric medium. It has been shown that depending on beam and plasma parameters, the hybrid plasma mode can be separated from the hybrid waveguide mode, or be coupled to it through the beam resulting in strong gain increase, or exhibit a flat gain vs frequency dependence over a very broad band. The parameters, at which the -3 dB bandwidth calculated for 30 dB peak gain exceeds an octave, have been found

  15. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

    Science.gov (United States)

    Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

    2018-04-01

    For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

  16. Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

    International Nuclear Information System (INIS)

    Sielski, Jan; Jeszka, Jeremiasz K.

    2012-01-01

    The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Efficient propagation-inside-layer expansion algorithm for solving the scattering from three-dimensional nested homogeneous dielectric bodies with arbitrary shape.

    Science.gov (United States)

    Bellez, Sami; Bourlier, Christophe; Kubické, Gildas

    2015-03-01

    This paper deals with the evaluation of electromagnetic scattering from a three-dimensional structure consisting of two nested homogeneous dielectric bodies with arbitrary shape. The scattering problem is formulated in terms of a set of Poggio-Miller-Chang-Harrington-Wu integral equations that are afterwards converted into a system of linear equations (impedance matrix equation) by applying the Galerkin method of moments (MoM) with Rao-Wilton-Glisson basis functions. The MoM matrix equation is then solved by deploying the iterative propagation-inside-layer expansion (PILE) method in order to obtain the unknown surface current densities, which are thereafter used to handle the radar cross-section (RCS) patterns. Some numerical results for various structures including canonical geometries are presented and compared with those of the FEKO software in order to validate the PILE-based approach as well as to show its efficiency to analyze the full-polarized RCS patterns.

  18. High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

    Science.gov (United States)

    Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

    2018-05-01

    To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

  19. Effects of gas temperature in the plasma layer on RONS generation in array-type dielectric barrier discharge at atmospheric pressure

    Science.gov (United States)

    Yoon, Sung-Young; Yi, Changho; Eom, Sangheum; Park, Seungil; Kim, Seong Bong; Ryu, Seungmin; Yoo, Suk Jae

    2017-12-01

    In this work, we studied the control of plasma-produced species under a fixed gas composition (i.e., ambient air) in a 10 kHz-driven array-type dielectric barrier atmospheric-pressure plasma discharge. Instead of the gas composition, only the gas velocity was controlled. Thus, the plasma-maintenance cost was considerably lower than methods such as external N2 or O2 injection. The plasma-produced species were monitored using Fourier transformed infrared spectroscopy. The discharge properties were measured using a voltage probe, current probe, infrared camera, and optical emission spectroscopy. The results showed that the major plasma products largely depend on the gas temperature in the plasma discharge layer. The gas temperature in the plasma discharge layer was significantly different to the temperature of the ceramic adjacent to the plasma discharge layer, even in the small discharge power density of ˜15 W/cm2 or ˜100 W/cm3. Because the vibrational excitation of N2 was suppressed by the higher gas flow, the major plasma-produced species shifted from NOx in low flow to O3 in high flow.

  20. Multiple prismatic calcium phosphate layers in the jaws of present-day sharks (Chondrichthyes; Selachii).

    Science.gov (United States)

    Dingerkus, G; Séret, B; Guilbert, E

    1991-01-15

    Jaws of large individuals, over 2 m in total length, of the shark species Carcharodon carcharias (great white shark) and Isurus oxyrinchus (mako shark) of the family Lamnidae, and Galeocerdo cuvieri (tiger shark) and Carcharhinus leucas (bull shark) of the family Carcharhinidae were found to have multiple, up to five, layers of prismatic calcium phosphate surrounding the cartilages. Smaller individuals of these species and other known species of living chondrichthyans have only one layer of prismatic calcium phosphate surrounding the cartilages, as also do most species of fossil chondrichthyans. Two exceptions are the fossil shark genera Xenacanthus and Tamiobatis. Where it is found in living forms, this multiple layered calcification does not appear to be phylogenetic, as it appears to be lacking in other lamnid and carcharhinid genera and species. Rather it appears to be functional, only appearing in larger individuals and species of these two groups, and hence may be necessary to strengthen the jaw cartilages of such individuals for biting.

  1. Enhancement of Faraday effect in one-dimensional magneto-optical photonic crystal including a magnetic layer with wavelength dependent off-diagonal elements of dielectric constant tensor

    International Nuclear Information System (INIS)

    Inui, Chie; Ozaki, Shinsuke; Kura, Hiroaki; Sato, Tetsuya

    2011-01-01

    Optical and magneto-optical properties of one-dimensional magneto-optical photonic crystal (1-D MPC) prepared by the sol-gel dip-coating method, including a magnetic defect layer composed of mixture of CoFe 2 O 4 and SiO 2 , are investigated from both the experimental and theoretical standpoints. The resonant transmission of light was observed around 570 nm in the photonic band gap. The Faraday rotation angle θ F showed two maxima at 490 and 640 nm, and the wavelength dependence of θ F above 760 nm was similar to that of the CoFe 2 O 4 +SiO 2 single-layer film. The two maxima of θ F are attributed to the enhanced Faraday rotation of nonmagnetic TiO 2 layers in the cavity structure and that in magnetic CoFe 2 O 4 +SiO 2 layer through the light localization in MPC. The maximum value of θ F due to the magnetic CoFe 2 O 4 +SiO 2 layer in the MPC was 22-times larger than that in the single-layer film. The simulation study of MPC with CoFe 2 O 4 +SiO 2 magnetic defect layer, based on the matrix approach method, showed that the resonant light transmission was accompanied by the localization of electric field, and large enhancement of θ F appeared at different wavelengths so as to agree with the experimental features. This can be explained in terms of the wavelength dependent off-diagonal components of the dielectric constant tensor in addition to the large extinction coefficient in the CoFe 2 O 4 +SiO 2 magnetic defect layer. - Highlights: → 1-D magnetic photonic crystal (MPC) prepared by sol-gel method. → Enhancement of Faraday rotation due to the magnetic defect layer of CoFe 2 O 4 . → Shift of wavelength of Faraday rotation maximum from resonant light transmission.

  2. Effects of surface modification on the critical behaviour in multiple-surface-layer ferroelectric thin films

    International Nuclear Information System (INIS)

    Lu, Z X

    2013-01-01

    Using the usual mean-field theory approximation, the critical behaviour (i.e. the Curie temperature T c and the critical surface transverse field Ω sc ) in a multiple-surface-layer ferroelectric thin film is studied on the basis of the spin- 1/2 transverse Ising model. The dependence of the Curie temperature T c on the surface transverse field Ω s and the surface layer number N s are discussed in detail. Meanwhile the dependence of the critical surface transverse field Ω sc on the surface layer number N s is also examined. The numerical results indicate that the critical behaviour of ferroelectric thin films is obviously affected by modifications of the surface transverse field Ω s and surface layer number N s .

  3. Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

    International Nuclear Information System (INIS)

    Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

    2006-01-01

    In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

  4. Model for CO2 leakage including multiple geological layers and multiple leaky wells.

    Science.gov (United States)

    Nordbotten, Jan M; Kavetski, Dmitri; Celia, Michael A; Bachu, Stefan

    2009-02-01

    Geological storage of carbon dioxide (CO2) is likely to be an integral component of any realistic plan to reduce anthropogenic greenhouse gas emissions. In conjunction with large-scale deployment of carbon storage as a technology, there is an urgent need for tools which provide reliable and quick assessments of aquifer storage performance. Previously, abandoned wells from over a century of oil and gas exploration and production have been identified as critical potential leakage paths. The practical importance of abandoned wells is emphasized by the correlation of heavy CO2 emitters (typically associated with industrialized areas) to oil and gas producing regions in North America. Herein, we describe a novel framework for predicting the leakage from large numbers of abandoned wells, forming leakage paths connecting multiple subsurface permeable formations. The framework is designed to exploit analytical solutions to various components of the problem and, ultimately, leads to a grid-free approximation to CO2 and brine leakage rates, as well as fluid distributions. We apply our model in a comparison to an established numerical solverforthe underlying governing equations. Thereafter, we demonstrate the capabilities of the model on typical field data taken from the vicinity of Edmonton, Alberta. This data set consists of over 500 wells and 7 permeable formations. Results show the flexibility and utility of the solution methods, and highlight the role that analytical and semianalytical solutions can play in this important problem.

  5. A General Cross-Layer Cloud Scheduling Framework for Multiple IoT Computer Tasks.

    Science.gov (United States)

    Wu, Guanlin; Bao, Weidong; Zhu, Xiaomin; Zhang, Xiongtao

    2018-05-23

    The diversity of IoT services and applications brings enormous challenges to improving the performance of multiple computer tasks' scheduling in cross-layer cloud computing systems. Unfortunately, the commonly-employed frameworks fail to adapt to the new patterns on the cross-layer cloud. To solve this issue, we design a new computer task scheduling framework for multiple IoT services in cross-layer cloud computing systems. Specifically, we first analyze the features of the cross-layer cloud and computer tasks. Then, we design the scheduling framework based on the analysis and present detailed models to illustrate the procedures of using the framework. With the proposed framework, the IoT services deployed in cross-layer cloud computing systems can dynamically select suitable algorithms and use resources more effectively to finish computer tasks with different objectives. Finally, the algorithms are given based on the framework, and extensive experiments are also given to validate its effectiveness, as well as its superiority.

  6. Numerical Computation of Underground Inundation in Multiple Layers Using the Adaptive Transfer Method

    Directory of Open Access Journals (Sweden)

    Hyung-Jun Kim

    2018-01-01

    Full Text Available Extreme rainfall causes surface runoff to flow towards lowlands and subterranean facilities, such as subway stations and buildings with underground spaces in densely packed urban areas. These facilities and areas are therefore vulnerable to catastrophic submergence. However, flood modeling of underground space has not yet been adequately studied because there are difficulties in reproducing the associated multiple horizontal layers connected with staircases or elevators. This study proposes a convenient approach to simulate underground inundation when two layers are connected. The main facet of this approach is to compute the flow flux passing through staircases in an upper layer and to transfer the equivalent quantity to a lower layer. This is defined as the ‘adaptive transfer method’. This method overcomes the limitations of 2D modeling by introducing layers connecting concepts to prevent large variations in mesh sizes caused by complicated underlying obstacles or local details. Consequently, this study aims to contribute to the numerical analysis of flow in inundated underground spaces with multiple floors.

  7. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  8. Dielectric-Spectroscopic and ac Conductivity Investigations on Manganese Doped Layered Na1.9Li0.1Ti3O7 Ceramics

    International Nuclear Information System (INIS)

    Pal, Dharmendra; Pandey, J. L.; Pal, Shri

    2009-01-01

    The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates (Na 1.9 Li 0.1 Ti 3 O 7 ). The dependence of loss tangent (Tanδ), relative permittivity (ε r ) and ac conductivity (σ ac ) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tanδ) in manganese-doped derivatives of layered Na 1.9 Li 0.1 Ti 3 O 7 ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping

  9. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  10. Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

    International Nuclear Information System (INIS)

    Deng, Zhen; Li, Zishen; Jiang, Yang; Ma, Ziguang; Fang, Yutao; Li, Yangfeng; Wang, Wenxin; Jia, Haiqiang; Chen, Hong

    2015-01-01

    In this work, a novel hybrid graphene/InGaN-based multiple quantum wells (MQWs) structure has been fabricated. Compared to the sample conventional structure (CS), the utilization of graphene transferred on top GaN layer significantly enhances the internal quantum efficiency and relatively photoluminescence intensity. Furthermore, the excitons in the MQWs of sample hybrid structure (HS) have a shorter decay lifetime of 3.4 ns than that of 6.7 ns for sample CS. These results are probably attributed to the free carriers in the graphene layer, which can screen the piezoelectric field in the active region and thus present a free quantum-confined Stark effect-like behavior. Our work demonstrates that the graphene on the top GaN layer can effectively increase the recombination rate in sample HS, which may further improve LEDs' performance. (orig.)

  11. Retinal layer segmentation in multiple sclerosis: a systematic review and meta-analysis.

    Science.gov (United States)

    Petzold, Axel; Balcer, Laura J; Calabresi, Peter A; Costello, Fiona; Frohman, Teresa C; Frohman, Elliot M; Martinez-Lapiscina, Elena H; Green, Ari J; Kardon, Randy; Outteryck, Olivier; Paul, Friedemann; Schippling, Sven; Vermersch, Patrik; Villoslada, Pablo; Balk, Lisanne J

    2017-10-01

    Structural retinal imaging biomarkers are important for early recognition and monitoring of inflammation and neurodegeneration in multiple sclerosis. With the introduction of spectral domain optical coherence tomography (SD-OCT), supervised automated segmentation of individual retinal layers is possible. We aimed to investigate which retinal layers show atrophy associated with neurodegeneration in multiple sclerosis when measured with SD-OCT. In this systematic review and meta-analysis, we searched for studies in which SD-OCT was used to look at the retina in people with multiple sclerosis with or without optic neuritis in PubMed, Web of Science, and Google Scholar between Nov 22, 1991, and April 19, 2016. Data were taken from cross-sectional cohorts and from one timepoint from longitudinal studies (at least 3 months after onset in studies of optic neuritis). We classified data on eyes into healthy controls, multiple-sclerosis-associated optic neuritis (MSON), and multiple sclerosis without optic neuritis (MSNON). We assessed thickness of the retinal layers and we rated individual layer segmentation performance by random effects meta-analysis for MSON eyes versus control eyes, MSNON eyes versus control eyes, and MSNON eyes versus MSON eyes. We excluded relevant sources of bias by funnel plots. Of 25 497 records identified, 110 articles were eligible and 40 reported data (in total 5776 eyes from patients with multiple sclerosis [1667 MSON eyes and 4109 MSNON eyes] and 1697 eyes from healthy controls) that met published OCT quality control criteria and were suitable for meta-analysis. Compared with control eyes, the peripapillary retinal nerve fibre layer (RNFL) showed thinning in MSON eyes (mean difference -20·10 μm, 95% CI -22·76 to -17·44; pmultiple sclerosis and control eyes were found in the peripapillary RNFL and macular GCIPL. Inflammatory disease activity might be captured by the INL. Because of the consistency, robustness, and large effect size, we

  12. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  13. Logisnet: A tool for multimethod, multiple soil layers slope stability analysis

    Science.gov (United States)

    Legorreta Paulin, G.; Bursik, M.

    2009-05-01

    Shallow landslides and slope failures have been studied from several points of view (inventory, heuristic, statistic, and deterministic). In particular, numerous methods embedded in Geographic Information Systems (GIS) applications have been developed to assess slope stability. However, little work has been done on the systematic comparison of different techniques and the incorporation of vertical contrasts of geotechnical properties in multiple soil layers. In this research, stability is modeled by using LOGISNET, an acronym for Multiple Logistic Regression, Geographic Information System, and Neural Network. The main purpose of LOGISNET is to provide government planners and decision makers a tool to assess landslide susceptibility. The system is fully operational for models handling an enhanced cartographic-hydrologic model (SINMAP) and multiple logistic regression. The enhanced implementation of SINMAP was tested at regional scale in the Highway 101 corridor in Del Norte County, California, and its susceptibility map was found to have improved factor of safety estimates based on comparison with landslide inventory maps. The enhanced SINMAP and multiple logistic regression subsystems have functions that allow the user to include vertical variation in geotechnical properties through summation of forces in specific soil layers acting on failure planes for a local or regional-scale mapping. The working group of LOGISNET foresees the development of an integrated tool system to handle and support the prognostic studies of slope instability, and communicate the results to the public through maps.

  14. Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

    International Nuclear Information System (INIS)

    Au, V; Charles, C; Boswell, R W

    2006-01-01

    The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

  15. Effect of paramagnetic manganese ions doping on frequency and high temperature dependence dielectric response of layered Na1.9Li0.1Ti3O7 ceramics

    International Nuclear Information System (INIS)

    Pal, Dharmendra; Pandey, J.L.

    2010-01-01

    The manganese doped layered ceramic samples (Na 1.9 Li 0.1 )Ti 3 O 7 : XMn (0.01 ≤ X ≤ 0.1) have been prepared using high temperature solid state reaction. The room temperature electron paramagnetic resonance (EPR) investigations exhibit that at lower percentage of doping the substitution of manganese ions occur as Mn 3+ at Ti 4+ sites, whereas for higher percentage of doping Mn 2+ ions occupy the two different interlayer sodium/lithium sites. In both cases, the charge compensation mechanism should operate to maintain the overall charge neutrality of the lattice. The manganese doped derivatives of layered Na 1.9 Li 0. 1Ti 3 O 7 (SLT) ceramics have been investigated through frequency dependence dielectric spectroscopy in this work. The results indicate that the dielectric losses in these ceramics are the collective contribution of electric conduction, dipole orientation and space charge polarization. Smeared peaks in temperature dependence of permittivity plots suggest diffuse nature of high temperature ferroelectric phase transition. The light manganese doping in SLT enhances the dielectric constant. However, manganese doping decreases dielectric loss due to inhibition of domain wall motion, enhances electron-hopping conduction, and impedes the interlayer ionic conduction as well. Manganese doping also gives rise to contraction of interlayer space. (author)

  16. Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

    Science.gov (United States)

    Thomas, D.; Puyoo, E.; Le Berre, M.; Militaru, L.; Koneti, S.; Malchère, A.; Epicier, T.; Roiban, L.; Albertini, D.; Sabac, A.; Calmon, F.

    2017-11-01

    Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their in-plane and out-of-plane electrical properties. A shadow edge evaporation process is used to develop planar devices with electrode separation distances in the range of 30 nm. Both vertical and planar test structures show a Poole-Frenkel conduction mechanism. Low trap energy levels (<0.1 eV) are identified for the two test structures which indicates that the Pt islands themselves are not acting as traps in the PF mechanism. Furthermore, a more than three order of magnitude current density difference is observed between the two geometries. This electrical anisotropy is attributed to a large electron mobility difference in the in-plane and out-of-plane directions which can be related to different trap distributions in both directions.

  17. ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

    Science.gov (United States)

    Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

    2017-11-01

    The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

  18. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    Energy Technology Data Exchange (ETDEWEB)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D. [Department of Material Science and Engineering, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Ankonina, G. [Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  19. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    International Nuclear Information System (INIS)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-01-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology

  20. Interaction of Multiple Particles with a Solidification Front: From Compacted Particle Layer to Particle Trapping.

    Science.gov (United States)

    Saint-Michel, Brice; Georgelin, Marc; Deville, Sylvain; Pocheau, Alain

    2017-06-13

    The interaction of solidification fronts with objects such as particles, droplets, cells, or bubbles is a phenomenon with many natural and technological occurrences. For an object facing the front, it may yield various fates, from trapping to rejection, with large implications regarding the solidification pattern. However, whereas most situations involve multiple particles interacting with each other and the front, attention has focused almost exclusively on the interaction of a single, isolated object with the front. Here we address experimentally the interaction of multiple particles with a solidification front by performing solidification experiments of a monodisperse particle suspension in a Hele-Shaw cell with precise control of growth conditions and real-time visualization. We evidence the growth of a particle layer ahead of the front at a close-packing volume fraction, and we document its steady-state value at various solidification velocities. We then extend single-particle models to the situation of multiple particles by taking into account the additional force induced on an entering particle by viscous friction in the compacted particle layer. By a force balance model this provides an indirect measure of the repelling mean thermomolecular pressure over a particle entering the front. The presence of multiple particles is found to increase it following a reduction of the thickness of the thin liquid film that separates particles and front. We anticipate the findings reported here to provide a relevant basis to understand many complex solidification situations in geophysics, engineering, biology, or food engineering, where multiple objects interact with the front and control the resulting solidification patterns.

  1. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    Science.gov (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  2. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  3. Characterization of dielectric materials in thin layers for the development of S.O.I. (Silicon on Insulator) substrates

    International Nuclear Information System (INIS)

    Gruber, Olivier

    1999-01-01

    This thesis deals with the characterization of oxide layer placed inside S.O.I. substrates and submitted to irradiation. This type of material is used for the development of hardened electronic components, that is to say components able to be used in a radiative environment. The irradiation induces charges (electrons or holes) in the recovered oxide. A part of these charges is trapped which leads to changes of the characteristics of the electronic components made on these substrates. The main topic of this study is the characterization of trapping properties of recovered oxides and more particularly of 'Unibond' material carried out with a new fabrication process: the 'smart-cut' process. This work is divided into three parts: - study with one carrier: this case is limited to low radiation doses where is only observed holes trapping. The evolution of the physical and chemical properties of the 'Unibond' material recovered oxide has been revealed, this evolution being due to the fabrication process. - Study with two carriers: in this case, there is trapping of holes and electrons. This type of trapping is observed in the case of strong radiation doses. A new type of electrons traps has been identified with the 'Unibond' material oxide. The transport and the trapping of holes and electrons have been studied in the case of transient phenomena created by short radiative pulses. This study has been carried out using a new measurement method. - Study with three carriers: here are added to holes and electrons the protons introduced in the recovered oxide by the annealing under hydrogen. These protons are movable when they are submitted to the effect of an electric field and they induce a memory effect according to their position in the oxide. These different works show that the 'Unibond' material is a very good solution for the future development of S.O.I. (author) [fr

  4. Development of a novel two-layer multiplate magnetorheological clutch for high-power applications

    International Nuclear Information System (INIS)

    Wang, Daoming; Tian, Zuzhi; Meng, Qingrui; Hou, Youfu

    2013-01-01

    A novel magnetorheological (MR) clutch for high-power applications is designed, simulated and tested. The clutch is implemented in a two-layer multiplate transmission form and adopts a two-way liquid cooling method to improve the heat dissipation capability. In this paper, a brief introduction to the transmission form of the proposed MR clutch is given first. Then, theoretical analyses of the output torque, magnetic circuit and temperature characteristic are conducted and further design details are presented and discussed, followed by a magnetostatic simulation of the designed circuit. A prototype of the clutch was fabricated and several tests were carried out to evaluate the torque transmission, time response and steady slip power of the prototype. The results show that the proposed MR clutch can produce a maximum output torque of 1545 N m and possesses a high steady slip power of up to 35 kW. Therefore, the developed two-layer multiplate MR clutch is promising for applications in many high-power situations. (paper)

  5. On the physical mechanism at the origin of multiple double layers appearance in plasma

    International Nuclear Information System (INIS)

    Dimitriu, D.G.; Gurlui, S.; Aflori, M.; Ivan, L.M.

    2005-01-01

    Double layers (DLs) in plasma are nonlinear potential structures consisting of two adjacent layers of positive and negative space charge, respectively. Between these layers a potential jump exists, creating an electric field. A common way to obtain a DL structure is to positively bias an electrode immersed in asymptotic stable plasma. In this way, a complex space charge structure (CSCS) in form of a positive 'nucleus' surrounded by a nearly spherical DL is obtained. Under certain experimental conditions (gas nature and pressure, plasma density, electron temperature) a more complex structure in form of two or more subsequent DLs was observed, which was called multiple double layers (MDL). It appears as several bright and concentric plasma shells attached to the electrode. The successive DLs are located at the abrupt changes of luminosity between two adjacent plasma shells. Probe measurements emphasized that the axial profile of the plasma potential has a stair steps shape, with potential jumps close to the ionization potential of the used gas. Experimental results clarify the essential role of excitation and ionization electron-neutral collisions for the generation and dynamics of MDL structures. However, if the electrode is large, the MDL structure appears non-concentrically, as a network of plasma spheres, near each other, almost equally distributed on the electrode surface. Each of the plasma spots is a CSCS as described above. Here, we will present experimental result on concentric and non-concentric MDL, which prove that the same physical mechanism is at the origin of their appearance in plasma. In this mechanism the electron-neutral impact excitations and ionizations play the key role. A simultaneously generation of both types of MDL was recorded. The dynamics of the MDL structures was analyzed by using the modern methods provided by the nonlinear dynamics. In this way, a scenario of transition to chaos by torus breakdown was emphasized, related with the

  6. Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

    Science.gov (United States)

    Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

    2018-06-01

    Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

  7. Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

    International Nuclear Information System (INIS)

    Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

    2015-01-01

    We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

  8. Protein structure modeling for CASP10 by multiple layers of global optimization.

    Science.gov (United States)

    Joo, Keehyoung; Lee, Juyong; Sim, Sangjin; Lee, Sun Young; Lee, Kiho; Heo, Seungryong; Lee, In-Ho; Lee, Sung Jong; Lee, Jooyoung

    2014-02-01

    In the template-based modeling (TBM) category of CASP10 experiment, we introduced a new protocol called protein modeling system (PMS) to generate accurate protein structures in terms of side-chains as well as backbone trace. In the new protocol, a global optimization algorithm, called conformational space annealing (CSA), is applied to the three layers of TBM procedure: multiple sequence-structure alignment, 3D chain building, and side-chain re-modeling. For 3D chain building, we developed a new energy function which includes new distance restraint terms of Lorentzian type (derived from multiple templates), and new energy terms that combine (physical) energy terms such as dynamic fragment assembly (DFA) energy, DFIRE statistical potential energy, hydrogen bonding term, etc. These physical energy terms are expected to guide the structure modeling especially for loop regions where no template structures are available. In addition, we developed a new quality assessment method based on random forest machine learning algorithm to screen templates, multiple alignments, and final models. For TBM targets of CASP10, we find that, due to the combination of three stages of CSA global optimizations and quality assessment, the modeling accuracy of PMS improves at each additional stage of the protocol. It is especially noteworthy that the side-chains of the final PMS models are far more accurate than the models in the intermediate steps. Copyright © 2013 Wiley Periodicals, Inc.

  9. Theoretical investigation of resonance frequencies in long wavelength electromagnetic wave scattering process from plasma prolate and oblate spheroids placed in a dielectric layer

    Science.gov (United States)

    Ahmadizadeh, Y.; Jazi, B.; Abdoli-Arani, A.

    2014-01-01

    Response of a prolate spheroid plasma and/or an oblate spheroid plasma in presence of long wavelength electromagnetic wave has been studied. The resonance frequencies of these objects are obtained and it is found that they reduce to the resonance frequency of spherical cold plasma. Moreover, the resonant frequencies of prolate spheroid plasma and oblate spheroid plasma covered by a dielectric are investigated as well. Furthermore, their dependency on dielectric permittivity and geometry dimensions is simulated.

  10. Single-layer graphene-assembled 3D porous carbon composites with PVA and Fe₃O₄ nano-fillers: an interface-mediated superior dielectric and EMI shielding performance.

    Science.gov (United States)

    Rao, B V Bhaskara; Yadav, Prasad; Aepuru, Radhamanohar; Panda, H S; Ogale, Satishchandra; Kale, S N

    2015-07-28

    In this study, a novel composite of Fe3O4 nanofiller-decorated single-layer graphene-assembled porous carbon (SLGAPC) with polyvinyl alcohol (PVA) having flexibility and a density of 0.75 g cm(-3) is explored for its dielectric and electromagnetic interference (EMI) response properties. The composite is prepared by the solution casting method and its constituents are optimized as 15 wt% SLGAPC and 20 wt% Fe3O4 through a novel solvent relaxation nuclear magnetic resonance experiment. The PVA-SLGAPC-Fe3O4 composite shows high dielectric permittivity in the range of 1 Hz-10 MHz, enhanced by a factor of 4 as compared to that of the PVA-SLGAPC composite, with a reduced loss by a factor of 2. The temperature dependent dielectric properties reveal the activation energy behaviour with reference to the glass transition temperature (80 °C) of PVA. The dielectric hysteresis with the temperature cycle reveals a remnant polarization. The enhanced dielectric properties are suggested to be the result of improvement in the localized polarization of the integrated interface system (Maxwell-Wagner-Sillars (MWS) polarization) formed by the uniform adsorption of Fe3O4 on the surface of SLGAPC conjugated with PVA. The EMI shielding property of the composite with a low thickness of 0.3 mm in the X-band (8.2-12.4 GHz) shows a very impressive shielding efficiency of ∼15 dB and a specific shielding effectiveness of 20 dB (g cm(-3))(-1), indicating the promising character of this material for flexible EMI shielding applications.

  11. Center for dielectric studies

    Science.gov (United States)

    Cross, L. E.; Newnham, R. E.; Biggers, J. V.

    1984-05-01

    This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

  12. Stable multiple-layer stationary solutions of a semilinear parabolic equation in two-dimensional domains

    Directory of Open Access Journals (Sweden)

    Arnaldo Simal do Nascimento

    1997-12-01

    Full Text Available We use $Gamma$--convergence to prove existence of stable multiple--layer stationary solutions (stable patterns to the reaction--diffusion equation. $$ eqalign{ {partial v_varepsilon over partial t} =& varepsilon^2, hbox{div}, (k_1(xabla v_varepsilon + k_2(x(v_varepsilon -alpha(Beta-v_varepsilon (v_varepsilon -gamma_varepsilon(x,,hbox{ in }Omegaimes{Bbb R}^+ cr &v_varepsilon(x,0 = v_0 quad {partial v_varepsilon over partial widehat{n}} = 0,, quadhbox{ for } xin partialOmega,, t >0,.} $$ Given nested simple closed curves in ${Bbb R}^2$, we give sufficient conditions on their curvature so that the reaction--diffusion problem possesses a family of stable patterns. In particular, we extend to two-dimensional domains and to a spatially inhomogeneous source term, a previous result by Yanagida and Miyata.

  13. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    KAUST Repository

    Wu, Xing

    2011-08-29

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

  14. High thermal conductivity lossy dielectric using co-densified multilayer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-06-17

    Systems and methods are described for loss dielectrics. A method of manufacturing a lossy dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer and then densifying together. The systems and methods provide advantages because the lossy dielectrics are less costly and more environmentally friendly than the available alternatives.

  15. Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers

    International Nuclear Information System (INIS)

    Lee, K.H.; Chang, P.C.; Chang, S.J.; Su, Y.K.; Wang, Y.C.; Yu, C.L.; Kuo, C.H.

    2010-01-01

    We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple Mg x N y /GaN nucleation layers. With multiple Mg x N y /GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple Mg x N y /GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (Φ B ) increased from 1.07 to 1.15 eV with the insertion of the multiple Mg x N y /GaN nucleation layers.

  16. Performance of Cross-layer Design with Multiple Outdated Estimates in Multiuser MIMO System

    Directory of Open Access Journals (Sweden)

    X. Yu

    2014-09-01

    Full Text Available By combining adaptive modulation (AM and automatic repeat request (ARQ protocol as well as user scheduling, the cross-layer design scheme of multiuser MIMO system with imperfect feedback is presented, and multiple outdated estimates method is proposed to improve the system performance. Based on this method and imperfect feedback information, the closed-form expressions of spectral efficiency (SE and packet error rate (PER of the system subject to the target PER constraint are respectively derived. With these expressions, the system performance can be effectively evaluated. To mitigate the effect of delayed feedback, the variable thresholds (VTs are also derived by means of the maximum a posteriori method, and these VTs include the conventional fixed thresholds (FTs as special cases. Simulation results show that the theoretical SE and PER are in good agreement with the corresponding simulation. The proposed CLD scheme with multiple estimates can obtain higher SE than the existing CLD scheme with single estimate, especially for large delay. Moreover, the CLD scheme with VTs outperforms that with conventional FTs.

  17. Numerical investigation on the dynamics and evolution mechanisms of multiple-current-pulse behavior in homogeneous helium dielectric-barrier discharges at atmospheric pressure

    Directory of Open Access Journals (Sweden)

    Yuhui Zhang

    2018-03-01

    Full Text Available A systematic investigation on the dynamics and evolution mechanisms of multiple-current-pulse (MCP behavior in homogeneous dielectric barrier discharge (HDBD is carried out via fluid modelling. Inspecting the simulation results, two typical discharge regimes, namely the MCP-Townsend regime and MCP-glow regime, are found prevailing in MCP discharges, each with distinctive electrical and dynamic properties. Moreover, the evolution of MCP behavior with external parameters altering are illustrated and explicitly discussed. It is revealed that the discharge undergoes some different stages as external parameters vary, and the discharge in each stage follows a series of distinctive pattern in morphological characteristics and evolution trends. Among those stages, the pulse number per half cycle is perceived to observe non-monotonic variations with applied voltage amplitude (Vam and gap width (dg increasing, and a merging effect among pulses, mainly induced by the enhanced contribution of sinusoidal component to the total current, is considered responsible for such phenomenon. The variation of incipient discharge peak phase (Φpm is dominated by the value of Vam as well as the proportion of total applied voltage that drops across the gas gap. Moreover, an abnormal, dramatic elevation in Jpm with dg increasing is observed, which could be evinced by the strengthened glow discharge structure and therefore enhanced space charge effect.

  18. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  19. Stimulated light emission in a dielectrically disordered composite porous matrix

    Science.gov (United States)

    Gross, E.; Künzner, N.; Diener, J.; Fujii, Minoru; Timoshenko, V. Yu.; Kovalev, D.

    2005-06-01

    We report on a medium exhibiting extremely efficient light scattering properties: a liquid network formed in a porous matrix. Liquid fragments confined in the solid matrix result in a random fluctuation of the dielectric function and act as scattering objects for photons. The optical scattering efficiency is defined by the filling factor of the liquid in the pores and its dielectric constant. The spectral dependence of the scattering length of photons indicates that the phenomenon is governed by a Mie-type scattering mechanism. The degree of the dielectric disorder of the medium, i.e. the level of opacity is tunable by the ambient vapor pressure of the dielectric substance. In the strongest scattering regime the scattering length of photons is found to be in the micrometer range. By incorporation of dye molecules in the voids of the porous layer a system exhibiting optical gain is realized. In the multiple scattering regime the optical path of diffusively propagating photons is enhanced and light amplification through stimulated emission occurs: a strong intensity enhancement of the dye emission accompanied by significant spectral narrowing is observed above the excitation threshold for a layer being in the opalescence state.

  20. Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

    International Nuclear Information System (INIS)

    Tomiya, S.; Goto, O.; Hoshina, Y.; Tanaka, T.; Ikeda, M.

    2006-01-01

    A new type of structural defects was observed in GaInN multiple quantum well structures with higher In concentrations that were grown on low-threading-dislocation-density templates. The defects were investigated by using various kinds of transmission electron microscopy techniques, and were found to consist of planar defects and associated dislocations. The planar defects nucleate at the interfaces between the quantum well layers and barrier layers. The dislocations are created at the edge boundary of the planar defects and run almost along the c-axis towards the epi-surface. The planar defects are revealed to be inversion domains which are thought to be caused by the segregation of excess In-In bonds at the interface between the quantum well layer and the barrier layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan); Goto, O.; Hoshina, Y.; Tanaka, T.; Ikeda, M. [Shiroishi Laser Center, Semiconductor Laser Division, MSNC, Sony Corporation, Miyagi (Japan)

    2006-06-15

    A new type of structural defects was observed in GaInN multiple quantum well structures with higher In concentrations that were grown on low-threading-dislocation-density templates. The defects were investigated by using various kinds of transmission electron microscopy techniques, and were found to consist of planar defects and associated dislocations. The planar defects nucleate at the interfaces between the quantum well layers and barrier layers. The dislocations are created at the edge boundary of the planar defects and run almost along the c-axis towards the epi-surface. The planar defects are revealed to be inversion domains which are thought to be caused by the segregation of excess In-In bonds at the interface between the quantum well layer and the barrier layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  3. Selective UV–O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

    Science.gov (United States)

    Kim, Yu-Jung; Jeong, Jun-Kyo; Park, Jung-Hyun; Jeong, Byung-Jun; Lee, Hi-Deok; Lee, Ga-Won

    2018-06-01

    In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.

  4. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  5. A theoretical study on Love wave sensors in a structure with multiple viscoelastic layers on a piezoelectric substrate

    International Nuclear Information System (INIS)

    Liu, Jiansheng

    2014-01-01

    A theoretical method is used to analyze the performance of Love wave sensors with multiple viscoelastic guiding layers on a piezoelectric substrate. The method is based upon the theoretical model for multi-elastic-layer piezoelectric Love waves and the Maxwell–Weichert model for viscoelastic materials. The relationship between sensor performance and the characteristics of Love waves is discussed. Numerical calculation is completed for a Love wave delay line consisting of a viscoelastic SU-8 layer, an elastic SiO 2 layer, an ST-90°X quartz substrate and two interdigital transducers (IDTs) with a period of 40 μm deposited on the substrate surface. The calculated results prove that a Love wave sensor with such a two-layer structure can achieve better performance than a Love wave sensor with only one (visco)elastic or elastic guiding layer. Some interesting abnormal phenomena, such as an oscillation in mass velocity sensitivity (S mv ), are predicted at the area where tail-raising occurs in the propagation velocity. The method and the numerical results presented in this work may help in the development of a high-performing Love wave sensor with multiple layers. (papers)

  6. Periodicity effects on compound waves guided by a thin metal slab sandwiched between two periodically nonhomogeneous dielectric materials

    Science.gov (United States)

    Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

    2017-10-01

    Surface-plasmon-polariton waves can be compounded when a sufficiently thin metal layer is sandwiched between two half spaces filled with dissimilar periodically nonhomogeneous dielectric materials. We solved the boundary-value problem for compound waves guided by a layer of a homogeneous and isotropic metal sandwiched between a structurally chiral material (SCM) and a periodically multilayered isotropic dielectric (PMLID) material. We found that the periodicities of the PMLID material and the SCM are crucial to excite a multiplicity of compound guided waves arising from strong coupling between the two interfaces.

  7. Multiple layers of posttranslational regulation refine circadian clock activity in Arabidopsis.

    Science.gov (United States)

    Seo, Pil Joon; Mas, Paloma

    2014-01-01

    The circadian clock is a cellular time-keeper mechanism that regulates biological rhythms with a period of ~24 h. The circadian rhythms in metabolism, physiology, and development are synchronized by environmental cues such as light and temperature. In plants, proper matching of the internal circadian time with the external environment confers fitness advantages on plant survival and propagation. Accordingly, plants have evolved elaborated regulatory mechanisms that precisely control the circadian oscillations. Transcriptional feedback regulation of several clock components has been well characterized over the past years. However, the importance of additional regulatory mechanisms such as chromatin remodeling, protein complexes, protein phosphorylation, and stability is only starting to emerge. The multiple layers of circadian regulation enable plants to properly synchronize with the environmental cycles and to fine-tune the circadian oscillations. This review focuses on the diverse posttranslational events that regulate circadian clock function. We discuss the mechanistic insights explaining how plants articulate a high degree of complexity in their regulatory networks to maintain circadian homeostasis and to generate highly precise waveforms of circadian expression and activity.

  8. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  9. Risk factors for progressive axonal degeneration of the retinal nerve fibre layer in multiple sclerosis patients.

    Science.gov (United States)

    Garcia-Martin, Elena; Pueyo, Victoria; Almarcegui, Carmen; Martin, Jesus; Ara, Jose R; Sancho, Eva; Pablo, Luis E; Dolz, Isabel; Fernandez, Javier

    2011-11-01

    To quantify structural and functional degeneration in the retinal nerve fibre layer (RNFL) of patients with multiple sclerosis (MS) over a 2-year time period, and to analyse the effect of prior optic neuritis (ON) as well as the duration and incidence of MS relapses. 166 MS patients and 120 healthy controls underwent assessment of visual acuity and colour vision, visual field examination, optical coherence tomography, scanning laser polarimetry and visual evoked potentials (VEPs). All subjects were re-evaluated after a period of 12 and 24 months. Changes in the optic nerve were detected by structural measurements but not by functional assessments. Changes registered in MS patients were greater than changes in healthy controls (p<0.05). Eyes with previous ON showed a greater reduction of parameters in the baseline evaluation, but RNFL atrophy was not significantly greater in the longitudinal study. Patients with MS relapses showed a greater reduction of RNFL thickness and VEP amplitude compared with non-relapsing cases. Patients with and without treatment showed similar measurement reduction, but the non-treated group had a significantly higher increase in Expanded Disability Status Scale (p=0.029). MS causes progressive axonal loss in the optic nerve, regardless of a history of ON. This ganglion cell atrophy occurs in all eyes but is more marked in MS eyes than in healthy eyes.

  10. PLZT capacitor and method to increase the dielectric constant

    Science.gov (United States)

    Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

    2017-12-12

    A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

  11. SU-E-J-27: Shifting Multiple EPID Imager Layers to Improve Image Quality and Resolution in MV CBCT

    Energy Technology Data Exchange (ETDEWEB)

    Chen, H; Rottmann, J; Yip, S; Berbeco, R [Brigham and Women’s Hospital, Boston, Massachusetts (United States); Morf, D; Fueglistaller, R; Star-Lack, J; Zentai, G [Varian Medical Systems, Palo Alto, CA (United States)

    2015-06-15

    Purpose: Vertical stacking of four conventional EPID layers can improve DQE for MV-CBCT applications. We hypothesize that shifting each layer laterally by half a pixel relative to the layer above, will improve the contrast-to-noise ratio (CNR) and image resolution. Methods: For CNR assessment, a 20 cm diameter digital phantom with 8 inserts is created. The attenuation coefficient of the phantom is similar to lung at the average energy of a 6 MV photon beam. The inserts have attenuations 1, 2…8 times of lung. One of the inserts is close to soft tissue, resembling the case of a tumor in lung. For resolution assessment, a digital phantom featuring a bar pattern is created. The phantom has an attenuation coefficient similar to soft tissue and the bars have an attenuation coefficient of calcium sulfate. A 2 MeV photon beam is attenuated through these phantoms and hits each of the four stacked detector layers. Each successive layer is shifted by half a pixel in the x only, y only, and x and y (combined) directions, respectively. Blurring and statistical noise are added to the projections. Projections from one, two, three and four layers are used for reconstruction. CNR and image resolution are evaluated and compared. Results: When projections from multiple layers are combined for reconstruction, CNR increases with the number of layers involved. CNR in reconstructions from two, three and four layers are 1.4, 1.7 and 1.99 times that from one layer. The resolution from the shifted four layer detector is also improved from a single layer. In a comparison between one layer versus four layers in this preliminary study, the resolution from four shifted layers is at least 20% better. Conclusion: Layer-shifting in a stacked EPID imager design enhances resolution as well as CNR for half scan MV-CBCT. The project described was supported, in part, by a grant from Varian Medical Systems, Inc., and Award No. R01CA188446-01 from the National Cancer Institute. The content is solely

  12. Note: On the dielectric constant of nanoconfined water

    OpenAIRE

    Zhang, Chao

    2018-01-01

    Investigations of dielectric properties of water in nanoconfinement are highly relevant for various applications. Here, using a simple capacitor model, we show that the low dielectric constant of nanoconfined water found in molecular dynamics simulations can be largely explained by the so-called dielectric dead-layer effect known for ferroelectric nanocapacitors.

  13. Electrode/Dielectric Strip For High-Energy-Density Capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S.

    1994-01-01

    Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

  14. Method for fabrication of crack-free ceramic dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

    2017-12-05

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  15. Method for fabrication of crack-free ceramic dielectric films

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

    2014-02-11

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  16. Influence of sodium dodecyl sulfate concentration on the photocatalytic activity and dielectric properties of intercalated sodium dodecyl sulfate into Zn–Cd–Al layered double hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Abdullah Ahmed Ali, E-mail: abdullah2803@gmail.com [Department of Physics, Faculty of Applied Science, Thamar University, Dhamar 87246 (Yemen); Talib, Zainal Abidin [Department of Physics, Faculty of Science, Universiti Putra Malaysia, UPM, Serdang, Selangor 43400 (Malaysia); Hussein, Mohd Zobir [Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, UPM, Serdang, Selangor 43400 (Malaysia)

    2015-02-15

    Highlights: • Zn–Cd–Al–LDH–DS were synthesized with different SDS concentrations. • Photocatalytic activity of samples was improved by increasing SDS concentration. • Dielectric response of LDH can be described by anomalous low frequency dispersion. • The dc conductivity values were calculated for Zn–Cd–Al–LDH–DS samples. • ESR spectra exhibited the successful intercalation of DS molecule into LDH gallery. - Abstract: Sodium dodecyl sulfate (SDS) has been successfully intercalated into Zn–Cd–Al–LDH precursor with different SDS concentrations (0.2, 0.3, 0.4, 0.5 and 1 mol L{sup −1}) using the coprecipitation method at (Zn{sup 2+} + Cd{sup 2+})/Al{sup 3+} molar ratio of 13 and pH 8. The structural, morphological, texture and composition properties of the synthesized (Zn–Cd–Al–LDH–DS) nanostructure were investigated using powder X-ray diffraction (PXRD), scanning electron microscope (SEM), thermogravimetric analysis (TGA) and Fourier transform infrared (FT-IR), respectively. The photocatalytic activity of these materials was developed by increasing the concentration of intercalated SDS. The absorbance spectra have been used to detect an anion in the LDH interlayer before and after the intercalation process, which confirmed the presence of the dodecyl sulfate (DS{sup −}) anion into LDH gallery after intercalation. The anomalous low frequency dispersion (ALFD) has been used to describe the dielectric response of Zn–Cd–Al–LDH–DS nanostructure using the second type of universal power law. At low frequency, the polarization effect of electrodes caused the rising in dielectric constant and loss values. An important result of the dielectric measurements is the calculated dc conductivity values, which are new in dielectric spectroscopy of LDH materials. An important result of the electron spin resonance (ESR) spectra exhibited the successful intercalation of DS molecule into LDH gallery. The g-factor value was affected by

  17. Experimental Characterization of Dielectric Properties in Fluid Saturated Artificial Shales

    OpenAIRE

    Beloborodov, Roman; Pervukhina, Marina; Han, Tongcheng; Josh, Matthew

    2017-01-01

    High dielectric contrast between water and hydrocarbons provides a useful method for distinguishing between producible layers of reservoir rocks and surrounding media. Dielectric response at high frequencies is related to the moisture content of rocks. Correlations between the dielectric permittivity and specific surface area can be used for the estimation of elastic and geomechanical properties of rocks. Knowledge of dielectric loss-factor and relaxation frequency in shales is critical for t...

  18. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    International Nuclear Information System (INIS)

    Sołtys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanisław

    2014-01-01

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking

  19. Separation of pigment formulations by high-performance thin-layer chromatography with automated multiple development.

    Science.gov (United States)

    Stiefel, Constanze; Dietzel, Sylvia; Endress, Marc; Morlock, Gertrud E

    2016-09-02

    Food packaging is designed to provide sufficient protection for the respective filling, legally binding information for the consumers like nutritional facts or filling information, and an attractive appearance to promote the sale. For quality and safety of the package, a regular quality control of the used printing materials is necessary to get consistently good print results, to avoid migration of undesired ink components into the food and to identify potentially faulty ink batches. Analytical approaches, however, have hardly been considered for quality assurance so far due to the lack of robust, suitable methods for the analysis of rarely soluble pigment formulations. Thus, a simple and generic high-performance thin-layer chromatography (HPTLC) method for the separation of different colored pigment formulations was developed on HPTLC plates silica gel 60 by automated multiple development. The gradient system provided a sharp resolution for differently soluble pigment constituents like additives and coating materials. The results of multi-detection allowed a first assignment of the differently detectable bands to particular chemical substance classes (e.g., lipophilic components), enabled the comparison of different commercially available pigment batches and revealed substantial variations in the composition of the batches. Hyphenation of HPTLC with high resolution mass spectrometry and infrared spectroscopy allowed the characterization of single unknown pigment constituents, which may partly be responsible for known quality problems during printing. The newly developed, precise and selective HPTLC method can be used as part of routine quality control for both, incoming pigment batches and monitoring of internal pigment production processes, to secure a consistent pigment composition resulting in consistent ink quality, a faultless print image and safe products. Hyphenation of HPTLC with the A. fischeri bioassay gave first information on the bioactivity or rather

  20. Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Jian; Batra, Vaishali; Han, Hui; Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Pandey, Raghvendar K. [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

    2015-09-15

    The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structure with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.

  1. Slow Manifolds and Multiple Equilibria in Stratocumulus-Capped Boundary Layers

    Directory of Open Access Journals (Sweden)

    Junya Uchida

    2010-12-01

    Full Text Available In marine stratocumulus-capped boundary layers under strong inversions, the timescale for thermodynamic adjustment is roughly a day, much shorter than the multiday timescale for inversion height adjustment. Slow-manifold analysis is introduced to exploit this timescale separation when boundary layer air columns experience only slow changes in their boundary conditions. Its essence is that the thermodynamic structure of the boundary layer remains approximately slaved to its inversion height and the instantaneous boundary conditions; this slaved structure determines the entrainment rate and hence the slow evolution of the inversion height. Slow-manifold analysis is shown to apply to mixed-layer model and large-eddy simulations of an idealized nocturnal stratocumulus- capped boundary layer; simulations with different initial inversion heights collapse onto single relationships of cloud properties with inversion height. Depending on the initial inversion height, the simulations evolve toward a shallow thin-cloud boundary layer or a deep, well-mixed thick cloud boundary layer. In the large-eddy simulations, these evolutions occur on two separate slow manifolds (one of which becomes unstable if cloud droplet concentration is reduced. Applications to analysis of stratocumulus observations and to pockets of open cells and ship tracks are proposed.

  2. Compensation Methods for Non-uniform and Incomplete Data Sampling in High Resolution PET with Multiple Scintillation Crystal Layers

    International Nuclear Information System (INIS)

    Lee, Jae Sung; Kim, Soo Mee; Lee, Dong Soo; Hong, Jong Hong; Sim, Kwang Souk; Rhee, June Tak

    2008-01-01

    To establish the methods for sinogram formation and correction in order to appropriately apply the filtered backprojection (FBP) reconstruction algorithm to the data acquired using PET scanner with multiple scintillation crystal layers. Formation for raw PET data storage and conversion methods from listmode data to histogram and sinogram were optimized. To solve the various problems occurred while the raw histogram was converted into sinogram, optimal sampling strategy and sampling efficiency correction method were investigated. Gap compensation methods that is unique in this system were also investigated. All the sinogram data were reconstructed using 2D filtered backprojection algorithm and compared to estimate the improvements by the correction algorithms. Optimal radial sampling interval and number of angular samples in terms of the sampling theorem and sampling efficiency correction algorithm were pitch/2 and 120, respectively. By applying the sampling efficiency correction and gap compensation, artifacts and background noise on the reconstructed image could be reduced. Conversion method from the histogram to sinogram was investigated for the FBP reconstruction of data acquired using multiple scintillation crystal layers. This method will be useful for the fast 2D reconstruction of multiple crystal layer PET data

  3. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  4. Dynamics of dielectric barrier discharges in different arrangements

    International Nuclear Information System (INIS)

    Gibalov, Valentin I; Pietsch, Gerhard J

    2012-01-01

    Based on experimental results, numerical investigations of dielectric barrier discharges (DBDs) have been performed in three basic configurations: in the volume, coplanar and surface discharge arrangements. It is shown that the DBD dynamics is the same in all arrangements and it is determined by the development of a few principal constituents, i.e. cathode- and anode-directed streamers, discharge channel, cathode layer and surface charges. It is found that the anode- and cathode-directed streamers appear with a highly conductive channel in between. The interaction of the streamers with conductive and dielectric surfaces determines the filamentary or homogeneous appearance of the discharge and its properties. The cathode-directed streamer is a self-sustaining phenomenon, which moves in a gas gap or along an electrode driven by a positive loop-back between photoemission and electron multiplication. The anode-directed streamer plays a subsidiary role. Depending on the kind of gas (electronegative or electropositive) and/or the degree of development of the cathode-directed streamer, the field strength in the conductive channels changes significantly. When the cathode-directed streamer touches the electrode surface, a cathode layer appears with parameters close to those of normal glow discharges. In volume discharge arrangements the movement of the streamers results in the appearance of Lichtenberg figures on dielectric surfaces. (paper)

  5. Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

    2016-04-01

    We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

  6. Findings of Optical Coherence Tomography of Retinal Nerve Fiber Layer in Two Common Types of Multiple Sclerosis

    Directory of Open Access Journals (Sweden)

    Gholamali Yousefipour

    2016-06-01

    Full Text Available Multiple sclerosis (MS is the most prevalent disease caused by the inflammatory demyelinating process that causes progressive nervous system degeneration over the time. Optical Coherence Tomography (OCT is a non-invasive optical imaging technology, which can measure the thickness of retinal nerve fiber layer as well as the diameter of the macula. The purpose of the study is evaluation OCT findings in two common types of multiple sclerosis. For doing the cross-sectional study, 63 patients with two prevalent types of multiple sclerosis (35 patients with Relapse Remitting Multiple Sclerosis (RRMS and 28 patients with Secondary Progressive Multiple Sclerosis (SPMS were evaluated for 6 months. Exclusion criteria of the study were a history of optic neuritis, suffering from diabetes mellitus, hypertension, ocular disease, and the presence of other neurologic degenerative diseases. Then, the thickness of retinal nerve fiber layer (RNFL, as well as thickness and volume of the macula, were measured in the patients using OCT technology. The disability rate of patients was evaluated according to Expanded Disability Status Scale (EDSS. Finally, data was analyzed by means of SPSS software. Overall, 35 patients with RRMS (with mean age of 32.37+10.01, average disease period of 3.81+3.42 and mean EDSS of 1.84+0.45 and 28 patients with SPMS (with mean age of 39.21+9.33, average disease period of 11.32+5.87 and mean EDSS of 5.12+1.46 were assessed and compared in terms of retinal nerve fiber layer and size and thickness of macula. In all of these sections, the thicknesses were smaller in SPMS patients than patients with RRMS. But, there was a significant difference in total thickness (81.82µm versus 96.03µm with P=0.04 and thickness of temporal sector (54.5 µm versus 69.34 µm with P=0.04 of retinal nerve fiber layer and macular size at the superior sector of external ring (1.48 mm³ versus 1.58 mm³ with P=0.03, and nasal sector of external ring surrounding

  7. SET: Session Layer-Assisted Efficient TCP Management Architecture for 6LoWPAN with Multiple Gateways

    Directory of Open Access Journals (Sweden)

    Akbar AliHammad

    2010-01-01

    Full Text Available 6LoWPAN (IPv6 based Low-Power Personal Area Network is a protocol specification that facilitates communication of IPv6 packets on top of IEEE 802.15.4 so that Internet and wireless sensor networks can be inter-connected. This interconnection is especially required in commercial and enterprise applications of sensor networks where reliable and timely data transfers such as multiple code updates are needed from Internet nodes to sensor nodes. For this type of inbound traffic which is mostly bulk, TCP as transport layer protocol is essential, resulting in end-to-end TCP session through a default gateway. In this scenario, a single gateway tends to become the bottleneck because of non-uniform connectivity to all the sensor nodes besides being vulnerable to buffer overflow. We propose SET; a management architecture for multiple split-TCP sessions across a number of serving gateways. SET implements striping and multiple TCP session management through a shim at session layer. Through analytical modeling and ns2 simulations, we show that our proposed architecture optimizes communication for ingress bulk data transfer while providing associated load balancing services. We conclude that multiple split-TCP sessions managed in parallel across a number of gateways result in reduced latency for bulk data transfer and provide robustness against gateway failures.

  8. Multiple layered metallic nanostructures for strong surface-enhanced Raman spectroscopy enhancement

    International Nuclear Information System (INIS)

    Xia, Ming; Xie, Ya-Hong; Qiao Kuan; Cheng Zhiyuan

    2016-01-01

    We report a systematic study on a practical way of patterning metallic nanostructures to achieve high surface-enhanced Raman spectroscopy (SERS) enhancement factors (EFs) and high hot-spot density. By simply superimposing a 1-layer Au nanotriangle array on another to form a multilayer nanotriangle array, the SERS signal can be enhanced by 2 orders of magnitude compared with a 1-layer nanotriangle array. The drastic increases in the SERS EF and the hot spot density of the multilayer Au nanotriangle array are due to the increase in the number of gaps formed between Au nanotriangles and the decrease of the gap width. (author)

  9. Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

    2015-08-31

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

  10. Mechanical loss in tantala/silica dielectric mirror coatings

    International Nuclear Information System (INIS)

    Penn, Steven D; Sneddon, Peter H; Armandula, Helena; Betzwieser, Joseph C; Cagnoli, Gianpietro; Camp, Jordan; Crooks, D R M; Fejer, Martin M; Gretarsson, Andri M; Harry, Gregory M; Hough, Jim; Kittelberger, Scott E; Mortonson, Michael J; Route, Roger; Rowan, Sheila; Vassiliou, Christophoros C

    2003-01-01

    Current interferometric gravitational wave detectors use test masses with mirror coatings formed from multiple layers of dielectric materials, most commonly alternating layers of SiO 2 (silica) and Ta 2 O 5 (tantala). However, mechanical loss in the Ta 2 O 5 /SiO 2 coatings may limit the design sensitivity for advanced detectors. We have investigated sources of mechanical loss in the Ta 2 O 5 /SiO 2 coatings, including loss associated with the coating-substrate interface, with the coating-layer interfaces and with the coating materials. Our results indicate that the loss is associated with the coating materials and that the loss of Ta 2 O 5 is substantially larger than that of SiO 2

  11. Cross-layer optimized rate adaptation and scheduling for multiple-user wireless video streaming

    NARCIS (Netherlands)

    Ozcelebi, T.; Sunay, M.O.; Tekalp, A.M.; Civanlar, M.R.

    2007-01-01

    We present a cross-layer optimized video rate adaptation and user scheduling scheme for multi-user wireless video streaming aiming for maximum quality of service (QoS) for each user,, maximum system video throughput, and QoS fairness among users. These objectives are jointly optimized using a

  12. Analysis of macular and nerve fiber layer thickness in multiple sclerosis patients according to severity level and optic neuritis episodes.

    Science.gov (United States)

    Soler García, A; Padilla Parrado, F; Figueroa-Ortiz, L C; González Gómez, A; García-Ben, A; García-Ben, E; García-Campos, J M

    2016-01-01

    Quantitative assessment of macular and nerve fibre layer thickness in multiple sclerosis patients with regard to expanded disability status scale (EDSS) and presence or absence of previous optic neuritis episodes. We recruited 62 patients with multiple sclerosis (53 relapsing-remitting and 9 secondary progressive) and 12 disease-free controls. All patients underwent an ophthalmological examination, including quantitative analysis of the nerve fibre layer and macular thickness using optical coherence tomography. Patients were classified according to EDSS as A (lower than 1.5), B (between 1.5 and 3.5), and C (above 3.5). Mean nerve fibre layer thickness in control, A, B, and C groups was 103.35±12.62, 99.04±14.35, 93.59±15.41, and 87.36±18.75μm respectively, with statistically significant differences (P<.05). In patients with no history of optic neuritis, history of episodes in the last 3 to 6 months, or history longer than 6 months, mean nerve fibre layer thickness was 99.25±13.71, 93.92±13.30 and 80.07±15.91μm respectively; differences were significant (P<.05). Mean macular thickness in control, A, B, and C groups was 220.01±12.07, 217.78±20.02, 217.68±20.77, and 219.04±24.26μm respectively. Differences were not statistically significant. The mean retinal nerve fibre layer thickness in multiple sclerosis patients is related to the EDSS level. Patients with previous optic neuritis episodes have a thinner retinal nerve fibre layer than patients with no history of these episodes. Mean macular thickness is not correlated to EDSS level. Copyright © 2014 Sociedad Española de Neurología. Publicado por Elsevier España, S.L.U. All rights reserved.

  13. Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

    Energy Technology Data Exchange (ETDEWEB)

    Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin; Saad, Ismail; Ghosh, Bablu K.; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia)

    2015-08-28

    3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMA layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices.

  14. Self-organized criticality: An interplay between stable and turbulent regimes of multiple anodic double layers in glow discharge plasma

    Science.gov (United States)

    Alex, Prince; Carreras, Benjamin Andres; Arumugam, Saravanan; Sinha, Suraj Kumar

    2018-05-01

    The role of self-organized criticality (SOC) in the transformation of multiple anodic double layers (MADLs) from the stable to turbulent regime has been investigated experimentally as the system approaches towards critical behavior. The experiment was performed in a modified glow discharge plasma setup, and the initial stable state of MADL comprising three concentric perceptible layers was produced when the drift velocity of electrons towards the anode exceeds the electron thermal velocity (νd ≥ 1.3νte). The macroscopic arrangement of both positive and negative charges in opposite layers of MADL is attributed to the self-organization scenario. Beyond νd ≥ 3νte, MADL begins to collapse and approaches critical and supercritical states through layer reduction which continue till the last remaining layer of the double layer is transformed into a highly unstable radiant anode glow. The avalanche resulting from the collapse of MADL leads to the rise of turbulence in the system. Long-range correlations, a key signature of SOC, have been explored in the turbulent floating potential fluctuations using the rescaled-range analysis technique. The result shows that the existence of the self-similarity regime with self-similarity parameter H varies between 0.55 and 0.91 for time lags longer than the decorrelation time. The power law tail in the rank function, slowly decaying tail of the autocorrelation function, and 1/f behavior of the power spectra of the fluctuations are consistent with the fact that SOC plays a conclusive role in the transformation of MADL from the stable to turbulent regime. Since the existence of SOC gives a measure of complexity in the system, the result provides the condition under which complexity arises in cold plasma.

  15. Smart Multiple Access Topologi Employing Intelligent Physical Layer for addressing the Mobile Node

    DEFF Research Database (Denmark)

    Sanyal, Rajarshi

    2014-01-01

    of the mobile users, the cell size of the mobile network will shrink. Eventually, there will be an upsurge of signaling messages interchanged between the device and the network due to an increase in handover related operations. Attempt should be made to reduce the interaction with the network and simplify...... the mobility and location management related processes. In this thesis we set out a technical architecture of a mobile network to abridge the intricate mobility and location management processes as well as the addressing principle to render more operational efficiency and cater to the needs of the data hungry......, for example, addressing of a node. If we have a method to actuate user identification for the purpose of mobility management by implementing lower layer processes, we can simplify or eliminate the layer 7 processes and hence reduce the intricacy and costs of mobile network elements and user equipment...

  16. Diagnostic study of multiple double layer formation in expanding RF plasma

    Science.gov (United States)

    Chakraborty, Shamik; Paul, Manash Kumar; Roy, Jitendra Nath; Nath, Aparna

    2018-03-01

    Intensely luminous double layers develop and then expand in size in a visibly glowing RF discharge produced using a plasma source consisting of a semi-transparent cylindrical mesh with a central electrode, in a linear plasma chamber. Although RF discharge is known to be independent of device geometry in the absence of magnetic field, the initiation of RF discharge using such a plasma source results in electron drift and further expansion of the plasma in the vessel. The dynamics of complex plasma structures are studied through electric probe diagnostics in the expanding RF plasma. The measurements made to study the parametric dependence of evolution of double layer structures are analyzed and presented here. The plasma parameter measurements suggest that the complex potential structures initially form with low potential difference between the layers and then gradually expand producing burst oscillations. The present study provides interesting information about the stability of plasma sheath and charge particle dynamics in it that are important to understand the underlying basic sheath physics along with applications in plasma acceleration and propulsion.

  17. Nanostructure multilayer dielectric materials for capacitors and insulators

    Science.gov (United States)

    Barbee, Jr., Troy W.; Johnson, Gary W.

    1998-04-21

    A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

  18. Single- and multi-layered all-dielectric ENG, MNG, and DNG material parameter extraction by use of the S-parameter method

    DEFF Research Database (Denmark)

    Wu, Yunqiu; Arslanagic, Samel

    2016-01-01

    modes inside the structure. This enables the ENG, MNG, and DNG behaviors. The material parameters are obtained from the simulated S-parameters by use of the Nicholson-Ross-Weir method. For the 2-layer structure in particular, the results show a possibility of DNG realization with a negative refractive...

  19. Iterative Pilot-Layer Aided Channel Estimation with Emphasis on Interleave-Division Multiple Access Systems

    OpenAIRE

    Schoeneich Hendrik; Hoeher Peter Adam

    2006-01-01

    Channel estimation schemes suitable for interleave-division multiple access (IDMA) systems are presented. Training and data are superimposed. Training-based and semiblind linear channel estimators are derived and their performance is discussed and compared. Monte Carlo simulation results are presented showing that the derived channel estimators in conjunction with a superimposed pilot sequence and chip-by-chip processing are able to track fast-fading frequency-selective channels. As opposed ...

  20. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  1. Microstructure evolution and mechanical properties of multiple-layer laser cladding coating of 308L stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kaibin; Li, Dong, E-mail: lid@sues.edu.cn; Liu, Dongyu; Pei, Guangyu; Sun, Lei

    2015-06-15

    Highlights: • Grain morphology transformations of 308L stainless steel multiple-layer are studied. • The cladding metals solidify in AF mode and consist of austenite and about 10.48% δ ferrite. • The ferrite content distributes into an increasing trend as the number of layers increase. • The distribution of hardness from the substrate to the coating is relatively uniform. • The cladding tensile sample shows good tensile properties, and the fracture mode is the ductile fracture. - Abstract: Multiple-layer laser cladding of 308L stainless steel was obtained by a fiber laser using a way of wire feeding to repair the surface scrapped or erosive parts of 316L stainless steel. The microstructure of the coating was measured by a metallographic microscope, and phase composition was determined by X-ray diffraction. The results show that good metallurgical bonding can be obtained between the 308L stainless steel coating and 316L stainless steel substrate. The coating is mainly composed of columnar dendrites, and there are also a few planar crystals and cellular dendrites distributed in the bonding zone. Meanwhile, some equiaxed grains and steering dendrites are distributed in the apex of the coating. Grains incorporate in epitaxial columnar dendrite's growth between different layers and tracks. It has been proved using XRD that the coating basically consists of austenite and a small amount of δ ferrite. The coating solidifies in FA mode according to the Creq/Nieq ratio and metallurgical analysis results. The average content of δ ferrite is about 10.48% and morphologies of the ferrite are mostly vermicular, skeletal and lathy. Due to heat treatment and different cooling rate, the δ ferrite content generally increases as the number of laser cladding layers increases. The coating and the substrate have equivalent microhardness, and softening zone does not appear in the heat affected zone. The tensile strength and elongation of the coating are 548 MPa and 40

  2. An optoelectronic detecting based environment perception experiment for primer students using multiple-layer laser scanner

    Science.gov (United States)

    Wang, Shifeng; Wang, Rui; Zhang, Pengfei; Dai, Xiang; Gong, Dawei

    2017-08-01

    One of the motivations of OptoBot Lab is to train primer students into qualified engineers or researchers. The series training programs have been designed by supervisors and implemented with tutoring for students to test and practice their knowledge from textbooks. An environment perception experiment using a 32 layers laser scanner is described in this paper. The training program design and laboratory operation is introduced. The four parts of the experiments which are preparation, sensor calibration, 3D space reconstruction, and object recognition, are the participating students' main tasks for different teams. This entire program is one of the series training programs that play significant role in establishing solid research skill foundation for opto-electronic students.

  3. Layered autonomous overwatch: the necessity and feasability of multiple unmanned systems in combat support

    Science.gov (United States)

    Monckton, Simon; Digney, Bruce; Broten, Greg; Penzes, Steve

    2007-04-01

    Unmanned systems simultaneously reduce risk and magnify the impact of soldier-operators. For example, in Afghanistan UAVs routinely provide overwatch to manned units while UGVs support IED identification and disposal roles. Expanding these roles requires greater autonomy with a coherent unmanned "system of systems" approach that leverages one platform's strengths against the weakness of another. Specific collaborative unmanned systems such as shared sensing, communication relay, and distributed computing to achieve greater autonomy are often presented as possible solutions. By surveying currently deployed systems, this paper shows that the spectrum of air and ground systems provide an important mixture of range, speed, payload, and endurance with significant implications on mission structure. Rather than proposing UxV teams collaborating towards specific autonomous capabilities, this paper proposes that basic physical and environmental constraints will drive tactics towards a layered, unmanned battlespace that provides force protection and reconnaissance in depth to a manned core.

  4. Iterative Pilot-Layer Aided Channel Estimation with Emphasis on Interleave-Division Multiple Access Systems

    Directory of Open Access Journals (Sweden)

    Schoeneich Hendrik

    2006-01-01

    Full Text Available Channel estimation schemes suitable for interleave-division multiple access (IDMA systems are presented. Training and data are superimposed. Training-based and semiblind linear channel estimators are derived and their performance is discussed and compared. Monte Carlo simulation results are presented showing that the derived channel estimators in conjunction with a superimposed pilot sequence and chip-by-chip processing are able to track fast-fading frequency-selective channels. As opposed to conventional channel estimation techniques, the BER performance even improves with increasing Doppler spread for typical system parameters. An error performance close to the case of perfect channel knowledge can be achieved with high power efficiency.

  5. Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

    Science.gov (United States)

    Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

  6. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  7. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  8. Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

    Science.gov (United States)

    Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

    2016-12-01

    Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

  9. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  10. Clear air boundary layer spaced antenna wind measurement with the Multiple Antenna Profiler (MAPR

    Directory of Open Access Journals (Sweden)

    S. A. Cohn

    Full Text Available Spaced antenna (SA wind measurement techniques are applied to Multiple Antenna Profiler (MAPR data to evaluate its performance in clear air conditions. MAPR is a multiple antenna 915 MHz wind profiler developed at the National Center for Atmospheric Research (NCAR and described in Cohn et al. (1997, designed to make high resolution wind measurements. Previous reported measurements with MAPR were restricted to precipitation because of low signal to noise (SNR and signal to ground-clutter (SCR ratios. By using a standard pulse-coding technique and upgrading the profiler control software, increases in average power and SNR were achieved, making routine measurements in clear air possible. Comparison of winds measured by MAPR and by a sonic anemometer on a nearby 300 m tower show correlation coefficients in the range of R2 = 0.75 – 0.80, and an average absolute error of ~ 1.4 m s - 1 . This compares favorably with the agreement typically found in wind profiler comparisons. We also consider the use of the parameter ah , which is related to the value of the cross-correlation function at its zero crossing. This parameter is a data quality indicator and possibly a key component in a ground clutter removal technique.

    Key words. Meteorology and atmospheric dynamics (mesoscale meteorology; instruments and techniques – Radio science (remote sensing

  11. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    -dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

  12. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  13. A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Miller, S.L.; Fleetwood, D.M.; McWhorter, P.J.; Reber, R.A. Jr.; Murray, J.R.

    1993-01-01

    A general methodology is developed to experimentally characterize the spatial distribution of occupied traps in dielectric films on a semiconductor. The effects of parasitics such as leakage, charge transport through more than one interface, and interface trap charge are quantitatively addressed. Charge transport with contributions from multiple charge species is rigorously treated. The methodology is independent of the charge transport mechanism(s), and is directly applicable to multilayer dielectric structures. The centroid capacitance, rather than the centroid itself, is introduced as the fundamental quantity that permits the generic analysis of multilayer structures. In particular, the form of many equations describing stacked dielectric structures becomes independent of the number of layers comprising the stack if they are expressed in terms of the centroid capacitance and/or the flatband voltage. The experimental methodology is illustrated with an application using thermally stimulated current (TSC) measurements. The centroid of changes (via thermal emission) in the amount of trapped charge was determined for two different samples of a triple-layer dielectric structure. A direct consequence of the TSC analyses is the rigorous proof that changes in interface trap charge can contribute, though typically not significantly, to thermally stimulated current

  14. Microstructural Analysis and Transport Properties of Thermally Sprayed Multiple-Layer Ceramic Coatings

    Science.gov (United States)

    Wang, Hsin; Muralidharan, Govindarajan; Leonard, Donovan N.; Haynes, J. Allen; Porter, Wallace D.; England, Roger D.; Hays, Michael; Dwivedi, Gopal; Sampath, Sanjay

    2018-02-01

    Multilayer, graded ceramic/metal coatings were prepared by an air plasma spray method on Ti-6Al-4V, 4140 steel and graphite substrates. The coatings were designed to provide thermal barriers for diesel engine pistons to operate at higher temperatures with improved thermal efficiency and cleaner emissions. A systematic, progressive variation in the mixture of yttria-stabilized zirconia and bondcoat alloys (NiCoCrAlYHfSi) was designed to provide better thermal expansion match with the substrate and to improve thermal shock resistance and cycle life. Heat transfer through the layers was evaluated by a flash diffusivity technique based on a model of one-dimensional heat flow. The aging effect of the as-sprayed coatings was captured during diffusivity measurements, which included one heating and cooling cycle. The hysteresis of thermal diffusivity due to aging was not observed after 100-h annealing at 800 °C. The measurements of coatings on substrate and freestanding coatings allowed the influence of interface resistance to be evaluated. The microstructure of the multilayer coating was examined using scanning electron microscope and electron probe microanalysis.

  15. Inertial polarization of dielectrics

    OpenAIRE

    Zavodovsky, A. G.

    2011-01-01

    It was proved that accelerated motion of a linear dielectric causes its polarization. Accelerated translational motion of a dielectric's plate leads to the positive charge of the surface facing the direction of motion. Metal plates of a capacitor were used to register polarized charges on a dielectric's surface. Potential difference between the capacitor plates is proportional to acceleration, when acceleration is constant potential difference grows with the increase of a dielectric's area, o...

  16. [Multiple emissions in organic electroluminescent device using a mixed layer as an emitter].

    Science.gov (United States)

    Zhu, Wen-qing; Wu, You-zhi; Zheng, Xin-you; Jiang, Xue-yin; Zhang, Zhi-lin; Sun, Run-guang; Xu, Shao-hong

    2005-04-01

    A organic electroluminescent device has been fabricated by using a mixed layer as an emitter. The configuration of the device is ITO/TPD/TPD: PBD(equimole)/PBD/A1, in which TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) and PBD (2-(4'-biphenyl)-5-(4''-tert-butylphenyl)-1,3,4-oxadiazole) are used as hole transport material and electron transport material, respectively. Broad and red-shifted electroluminescent spectra related to the fluorescence of constituent materials were observed. It is suggested that the monomer, exciplex and electroplex emissions are simultaneously involved in EL spectra by comparison of the EL with the PL spectra and decomposition of the EL spectrum. The type of exciplex is the interaction between the excited state TPD (TPD*) and PBD in the ground state, and the type of electroplex is a (D+-A-)* complex by cross-recombination of hole on the charged hole transport molecule (D+) and electron on the charged electron transport molecule (A-). All types of excited states show different formation mechanisms and recombination processes under electric field. The change of emission strengths from monomer and excited complexes lead to a blue-shift of the emissive spectra with an increasing electric field. The maximum luminance and external quantum efficiency of this device are 240 cd x (cm2)(-1) and 0.49%, respectively. The emissions from exciplex or electroplex formation at the organic solid interface generally present a broad and red-shifted emissive band, providing an effective method for tuning of emission color in organic electroluminescent devices.

  17. Thiolated alginate-based multiple layer mucoadhesive films of metformin forintra-pocket local delivery: in vitro characterization and clinical assessment.

    Science.gov (United States)

    Kassem, Abeer Ahmed; Issa, Doaa Ahmed Elsayed; Kotry, Gehan Sherif; Farid, Ragwa Mohamed

    2017-01-01

    Periodontal disease broadly defines group of conditions in which the supportive structure of the tooth (periodontium) is destroyed. Recent studies suggested that the anti-diabetic drug metformin hydrochloride (MF) has an osteogenic effect and is beneficial for the management of periodontitis. Development of strong mucoadhesive multiple layer film loading small dose of MF for intra-pocket application. Multiple layer film was developed by double casting followed by compression method. Either 6% carboxy methyl cellulose sodium (CMC) or sodium alginate (ALG) constituted the inner drug (0.6%) loaded layer. Thiolated sodium alginate (TSA; 2 or 4%) constituted the outer drug free layers to enhance mucoadhesion and achieve controlled drug release. Optimized formulation was assessed clinically on 20 subjects. Films were uniform, thin and hard enough for easy insertion into periodontal pockets. Based on water uptake and in vitro drug release, CMC based film with 4% TSA as an outer layer was the optimized formulation with enhanced mucoadhesion and controlled drug release (83.73% over 12 h). SEM showed the effective fabrication of the triple layer film in which connective lines between the layers could be observed. FTIR examination suggests possibility of hydrogen bonding between the -NH groups of metformin and -OH groups of CMC. DSC revealed the presence of MF mainly in the amorphous form. Clinical results indicated improvement of all clinical parameters six months post treatment. The results suggested that local application of the mucoadhesive multiple layer films loaded with metformin hydrochloride was able to manage moderate chronic periodontitis.

  18. Three-dimensional periodic dielectric structures having photonic Dirac points

    Science.gov (United States)

    Bravo-Abad, Jorge; Joannopoulos, John D.; Soljacic, Marin

    2015-06-02

    The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the .beta.-factor) over large areas, contrary to the conventional wisdom that the .beta.-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.

  19. Three-dimensional periodic dielectric structures having photonic Dirac points

    Energy Technology Data Exchange (ETDEWEB)

    Bravo-Abad, Jorge; Joannopoulos, John D.; Soljacic, Marin

    2015-06-02

    The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the .beta.-factor) over large areas, contrary to the conventional wisdom that the .beta.-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.

  20. Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

    CERN Document Server

    Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

    2000-01-01

    Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

  1. Infrared and THz spectroscopy of nanostructured dielectrics

    Directory of Open Access Journals (Sweden)

    Jan Petzelt

    2009-09-01

    Full Text Available Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized.

  2. Metabolic Changes in the Visual Cortex Are Linked to Retinal Nerve Fiber Layer Thinning in Multiple Sclerosis

    Science.gov (United States)

    Schubert, Florian; Bock, Markus; Walaszek, Bernadeta; Waiczies, Helmar; Schwenteck, Thomas; Dörr, Jan; Bellmann-Strobl, Judith; Mohr, Christian; Weinges-Evers, Nicholetta; Ittermann, Bernd; Wuerfel, Jens T.; Paul, Friedemann

    2011-01-01

    Objective To investigate the damage to the retinal nerve fiber layer as part of the anterior visual pathway as well as an impairment of the neuronal and axonal integrity in the visual cortex as part of the posterior visual pathway with complementary neuroimaging techniques, and to correlate our results to patients' clinical symptoms concerning the visual pathway. Design, Subjects and Methods Survey of 86 patients with relapsing-remitting multiple sclerosis that were subjected to retinal nerve fiber layer thickness (RNFLT) measurement by optical coherence tomography, to a routine MRI scan including the calculation of the brain parenchymal fraction (BPF), and to magnetic resonance spectroscopy at 3 tesla, quantifying N-acetyl aspartate (NAA) concentrations in the visual cortex and normal-appearing white matter. Results RNFLT correlated significantly with BPF and visual cortex NAA, but not with normal-appearing white matter NAA. This was connected with the patients' history of a previous optic neuritis. In a combined model, both BPF and visual cortex NAA were independently associated with RNFLT. Conclusions Our data suggest the existence of functional pathway-specific damage patterns exceeding global neurodegeneration. They suggest a strong interrelationship between damage to the anterior and the posterior visual pathway. PMID:21494672

  3. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  4. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  5. Association between retinal nerve fiber layer thickness and magnetic resonance imaging findings and intelligence in patients with multiple sclerosis.

    Science.gov (United States)

    Ashtari, Fereshteh; Emami, Parisa; Akbari, Mojtaba

    2015-01-01

    Multiple Sclerosis (MS) is a neurological disease in which demyelination and axonal loss leads to progressive disability. Cognition impairment is among the most common complication. Studying axonal loss in the retina is a new marker for MS. The main goal of our study is to search for correlations between magnetic resonance imaging (MRI) findings and the retinal nerve fiber layer (RNFL) thickness at the macula and head of the optic nerve and Wechsler Adult Intelligence Scale-Revised (WAIS-R) Scores that assess multiple domains of intelligence, and to explore the relationship between changes in the RNFL thickness with intellectual and cognitive dysfunction. A prospective cross-sectional study was conducted at the University Hospital of Kashani, Isfahan, Iran, from September to December 2013. All patients were assessed with a full-scale intelligence quotient (IQ) on the WAIS-R. An optical coherence tomography study and brain MRI were performed in the same week for all the patients. Statistical analysis was conducted by using a bivariate correlation, by utilizing SPSS 20.0. A P value ≤ 0.05 was the threshold of statistical significance. Examination of a 100 patients showed a significant correlation between the average RNFL thickness of the macula and the verbal IQ (P value = 0.01) and full IQ (P value = 0.01). There was a significant correlation between brain atrophy and verbal IQ. The RNFL loss was correlated with verbal IQ and full IQ.

  6. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  7. A method for building low loss multi-layer wiring for superconducting microwave devices

    Science.gov (United States)

    Dunsworth, A.; Barends, R.; Chen, Yu; Chen, Zijun; Chiaro, B.; Fowler, A.; Foxen, B.; Jeffrey, E.; Kelly, J.; Klimov, P. V.; Lucero, E.; Mutus, J. Y.; Neeley, M.; Neill, C.; Quintana, C.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T. C.; Neven, H.; Martinis, John M.; Megrant, A.

    2018-02-01

    Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ˜3.9 × 10-8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.

  8. Experimental Characterization of Dielectric Properties in Fluid Saturated Artificial Shales

    Directory of Open Access Journals (Sweden)

    Roman Beloborodov

    2017-01-01

    Full Text Available High dielectric contrast between water and hydrocarbons provides a useful method for distinguishing between producible layers of reservoir rocks and surrounding media. Dielectric response at high frequencies is related to the moisture content of rocks. Correlations between the dielectric permittivity and specific surface area can be used for the estimation of elastic and geomechanical properties of rocks. Knowledge of dielectric loss-factor and relaxation frequency in shales is critical for the design of techniques for effective hydrocarbon extraction and production from unconventional reservoirs. Although applicability of dielectric measurements is intriguing, the data interpretation is very challenging due to many factors influencing the dielectric response. For instance, dielectric permittivity is determined by mineralogical composition of solid fraction, volumetric content and composition of saturating fluid, rock microstructure and geometrical features of its solid components and pore space, temperature, and pressure. In this experimental study, we investigate the frequency dependent dielectric properties of artificial shale rocks prepared from silt-clay mixtures via mechanical compaction. Samples are prepared with various clay contents and pore fluids of different salinity and cation compositions. Measurements of dielectric properties are conducted in two orientations to investigate the dielectric anisotropy as the samples acquire strongly oriented microstructures during the compaction process.

  9. Surface waves on metal-dielectric metamaterials

    DEFF Research Database (Denmark)

    Takayama, Osamu; Shkondin, Evgeniy; Panah, Mohammad Esmail Aryaee

    2016-01-01

    In this paper we analyze surface electromagnetic waves supported at an interface between an isotropic medium and an effective anisotropic material that can be realized by alternating conductive and dielectric layers with deep subwavelength thicknesses. This configuration can host various types...

  10. Characterization of dielectric charging in RF MEMS

    NARCIS (Netherlands)

    Herfst, R.W.; Huizing, H.G.A.; Steeneken, P.G.; Schmitz, Jurriaan

    2005-01-01

    Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving

  11. Oblique surface waves at an interface between a metal-dielectric superlattice and an isotropic dielectric

    International Nuclear Information System (INIS)

    Vuković, Slobodan M; Miret, Juan J; Zapata-Rodriguez, Carlos J; Jakšić, Zoran

    2012-01-01

    We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal-dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal-dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thickness of the layers and the dielectric permittivities of the constituent materials are met. We show that losses within the metallic layers can be substantially reduced by making the layers sufficiently thin. At the same time, a dramatic enlargement of the range of angles for oblique propagation of the new surface modes is observed. This can lead, however, to field non-locality and consequently to failure of the EM approximation.

  12. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  13. Inductive dielectric analyzer

    International Nuclear Information System (INIS)

    Agranovich, Daniel; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri; Polygalov, Eugene

    2017-01-01

    One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions. (paper)

  14. Composition of the C6+ Fraction of Natural Gas by Multiple Porous Layer Open Tubular Capillaries Maintained at Low Temperatures.

    Science.gov (United States)

    Burger, Jessica L; Lovestead, Tara M; Bruno, Thomas J

    2016-03-17

    As the sources of natural gas become more diverse, the trace constituents of the C 6 + fraction are of increasing interest. Analysis of fuel gas (including natural gas) for compounds with more than 6 carbon atoms (the C 6 + fraction) has historically been complex and expensive. Hence, this is a procedure that is used most often in troubleshooting rather than for day-to-day operations. The C 6 + fraction affects gas quality issues and safety considerations such as anomalies associated with odorization. Recent advances in dynamic headspace vapor collection can be applied to this analysis and provide a faster, less complex alternative for compositional determination of the C 6 + fraction of natural gas. Porous layer open tubular capillaries maintained at low temperatures (PLOT-cryo) form the basis of a dynamic headspace sampling method that was developed at NIST initially for explosives in 2009. This method has been recently advanced by the combining of multiple PLOT capillary traps into one "bundle," or wafer, resulting in a device that allows the rapid trapping of relatively large amounts of analyte. In this study, natural gas analytes were collected by flowing natural gas from the laboratory (gas out of the wall) or a prepared surrogate gas flowing through a chilled wafer. The analytes were then removed from the PLOT-cryo wafer by thermal desorption and subsequent flushing of the wafer with helium. Gas chromatography (GC) with mass spectrometry (MS) was then used to identify the analytes.

  15. Quantification of elemental area densities in multiple metal layers (Au/Ni/Cu) on a Cr-coated quartz glass substrate for certification of NMIJ CRM 5208-a.

    Science.gov (United States)

    Ariga, Tomoko; Zhu, Yanbei; Ito, Mika; Takatsuka, Toshiko; Terauchi, Shinya; Kurokawa, Akira; Inagaki, Kazumi

    2018-04-01

    Area densities of Au/Ni/Cu layers on a Cr-coated quartz substrate were characterized to certify a multiple-metal-layer certified reference material (NMIJ CRM5208-a) that is intended for use in the analysis of the layer area density and the thickness by an X-ray fluorescence spectrometer. The area densities of Au/Ni/Cu layers were calculated from layer mass amounts and area. The layer mass amounts were determined by using wet chemical analyses, namely inductively coupled plasma mass spectrometry (ICP-MS), isotope-dilution (ID-) ICP-MS, and inductively coupled plasma optical emission spectrometry (ICP-OES) after dissolving the layers with diluted mixture of HCl and HNO 3 (1:1, v/v). Analytical results of the layer mass amounts obtained by the methods agreed well with each another within their uncertainty ranges. The area of the layer was determined by using a high-resolution optical scanner calibrated by Japan Calibration Service System (JCSS) standard scales. The property values of area density were 1.84 ± 0.05 μg/mm 2 for Au, 8.69 ± 0.17 μg/mm 2 for Ni, and 8.80 ± 0.14 μg/mm 2 for Cu (mean ± expanded uncertainty, coverage factor k = 2). In order to assess the reliability of these values, the density of each metal layer calculated from the property values of the area density and layer thickness measured by using a scanning electron microscope were compared with available literature values and good agreement between the observed values and values obtained in previous studies.

  16. FDTD Method for Piecewise Homogeneous Dielectric Media

    Directory of Open Access Journals (Sweden)

    Zh. O. Dombrovskaya

    2016-01-01

    Full Text Available In this paper, we consider a numerical solution of Maxwell’s curl equations for piecewise uniform dielectric medium by the example of a one-dimensional problem. For obtaining the second order accuracy, the electric field grid node is placed into the permittivity discontinuity point of the medium. If the dielectric permittivity is large, the problem becomes singularly perturbed and a contrast structure appears. We propose a piecewise quasi-uniform mesh which resolves all characteristic solution parts of the problem (regular part, boundary layer and transition zone placed between them in detail. The features of the mesh are discussed. 

  17. Contemporary dielectric materials

    CERN Document Server

    Saravanan, R

    2016-01-01

    This book deals with experimental results of the physical characterization of several important, dielectric materials of great current interest. The experimental tools used for the analysis of these materials include X-ray diffraction, dielectric measurements, magnetic measurements using a vibrating sample magnetometer, optical measurements using a UV-Visible spectrometer etc.

  18. Dielectric Modulated FET (DMFET)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the nanogap cavity leads to change in effective gate capacitance and thus gate bias for FET. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the ...

  19. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  20. Light in complex dielectrics

    NARCIS (Netherlands)

    Schuurmans, F.J.P.

    1999-01-01

    In this thesis the properties of light in complex dielectrics are described, with the two general topics of "modification of spontaneous emission" and "Anderson localization of light". The first part focuses on the spontaneous emission rate of an excited atom in a dielectric host with variable

  1. Improvements of deposited interpolysilicon dielectric characteristics with RTP N/sub 2/O-anneal

    NARCIS (Netherlands)

    Klootwijk, J.H.; Weusthof, Marcel H.H.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

    1996-01-01

    Nitridation of deposited instead of thermally grown oxides was studied to form high-quality inter-polysilicon dielectric layers for nonvolatile memories. It was found that by optimizing the texture and morphology of the polysilicon layers, and by optimizing the post-dielectric deposition-anneal,

  2. Apparatus and method supporting wireless access to multiple security layers in an industrial control and automation system or other system

    Science.gov (United States)

    Chen, Yu-Gene T.

    2013-04-16

    A method includes receiving a message at a first wireless node. The first wireless node is associated with a first wired network, and the first wired network is associated with a first security layer. The method also includes transmitting the message over the first wired network when at least one destination of the message is located in the first security layer. The method further includes wirelessly transmitting the message for delivery to a second wireless node when at least one destination of the message is located in a second security layer. The second wireless node is associated with a second wired network, and the second wired network is associated with the second security layer. The first and second security layers may be associated with different security paradigms and/or different security domains. Also, the message could be associated with destinations in the first and second security layers.

  3. Plane-wave diffraction by periodic structures with artificial anisotropic dielectrics

    International Nuclear Information System (INIS)

    Kazerooni, Azadeh Semsar; Shahabadi, Mahmoud

    2010-01-01

    Periodic structures with artificial anisotropic dielectrics are studied. The artificial anisotropic dielectric material in this work is made of two alternating isotropic dielectric layers. By a proper choice of the dielectric constant of the layers, we can realize a uniaxial anisotropic medium with controllable anisotropy. The artificial anisotropic dielectric is then used in periodic structures. For these structures, the optical axis of the artificial dielectric is assumed to be parallel or perpendicular to the period of the structure. Diffraction of plane waves by these structures is analyzed by a fully vectorial rigorous matrix method based on a generalized transmission line (TL) formulation. The propagation constants and field distributions are computed and diffraction properties of such structures are studied to show that, by a proper choice of structural parameters, these periodic structures with artificial anisotropic dielectrics can be used as polarizers or polarizing mirrors

  4. Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

    Science.gov (United States)

    Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

    2017-11-22

    Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

  5. Processes for multi-layer devices utilizing layer transfer

    Science.gov (United States)

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  6. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  7. Effects of multiple intravitreal anti-VEGF injections on retinal nerve fiber layer and intraocular pressure: a comparative clinical study.

    Science.gov (United States)

    Sobacı, Güngör; Güngör, Rıza; Ozge, Gökhan

    2013-01-01

    To determine the effect of multiple injections of ranibizumab or bevacizumab on retinal nerve fiber layer (RNFL) and intraocular pressure (IOP) in patients with age-related macular degeneration (AMD). This retrospective study includes 35 eyes of 35 patients treated with intravitreal bevacizumab (IVB, 1.25mg/0.05mL) and 30 eyes of 30 patients with intravitreal ranibizumab (IVR, 0.5mg/0.05mL) who had Fast RNFL analysis (Stratus™); IOP measurements were taken 30 minutes and 24 hours after each injection. The mean ages were 68.0±7.5 and 69.1±7.7 years in the IVR and IVB groups, respectively (P=0.55). They underwent (6.3±1.9) and (5.1±1.3) injections (P=0.07) over (13.6±2.1) and (14.05±2.6) months (P=0.45) in the IVR and IVB groups, respectively. Changes in overall and temporal RNFL thickness in IVR-treated eyes (105.3±6.9µm and 74.4±11.2µm) were not different from those in untreated eyes in the IVR group (104.6± 8.4µm and 75.1±12.6µm) (P=0.57 and P=0.41, respectively). Similarly, overall and temporal RNFL thickness in IVB-treated eyes (105.8±8.1µm and 74.5±11.8µm) were not different from those in untreated eyes in the IVB group (104.6±8µm and 74.8±12.9µm) (P=0.42 and P=0.80, respectively). The frequencies of IOP rise (P=0.60) and changes in RNFL thickness from baseline (P=0.16) were comparable between groups. Repeated intravitreal injection of ranibizumab or bevacizumab does not seem have adverse effects on RNFL thickness or IOP in wet AMD patients.

  8. Dielectric materials for electrical engineering

    CERN Document Server

    Martinez-Vega, Juan

    2013-01-01

    Part 1 is particularly concerned with physical properties, electrical ageing and modeling with topics such as the physics of charged dielectric materials, conduction mechanisms, dielectric relaxation, space charge, electric ageing and life end models and dielectric experimental characterization. Part 2 concerns some applications specific to dielectric materials: insulating oils for transformers, electrorheological fluids, electrolytic capacitors, ionic membranes, photovoltaic conversion, dielectric thermal control coatings for geostationary satellites, plastics recycling and piezoelectric poly

  9. Metallic dielectric photonic crystals and methods of fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Jeffrey Brian; Kim, Sang-Gook

    2016-12-20

    A metallic-dielectric photonic crystal is formed with a periodic structure defining a plurality of resonant cavities to selectively absorb incident radiation. A metal layer is deposited on the inner surfaces of the resonant cavities and a dielectric material fills inside the resonant cavities. This photonic crystal can be used to selectively absorb broadband solar radiation and then reemit absorbed radiation in a wavelength band that matches the absorption band of a photovoltaic cell. The photonic crystal can be fabricated by patterning a sacrificial layer with a plurality of holes, into which is deposited a supporting material. Removing the rest of the sacrificial layer creates a supporting structure, on which a layer of metal is deposited to define resonant cavities. A dielectric material then fills the cavities to form the photonic crystal.

  10. Metallic dielectric photonic crystals and methods of fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Jeffrey Brian; Kim, Sang-Gook

    2017-12-05

    A metallic-dielectric photonic crystal is formed with a periodic structure defining a plurality of resonant cavities to selectively absorb incident radiation. A metal layer is deposited on the inner surfaces of the resonant cavities and a dielectric material fills inside the resonant cavities. This photonic crystal can be used to selectively absorb broadband solar radiation and then reemit absorbed radiation in a wavelength band that matches the absorption band of a photovoltaic cell. The photonic crystal can be fabricated by patterning a sacrificial layer with a plurality of holes, into which is deposited a supporting material. Removing the rest of the sacrificial layer creates a supporting structure, on which a layer of metal is deposited to define resonant cavities. A dielectric material then fills the cavities to form the photonic crystal.

  11. Optics of dielectric microstructures

    DEFF Research Database (Denmark)

    Søndergaard, Thomas

    2002-01-01

    From the work carried out within the ph.d. project two topics have been selected for this thesis, namely emission of radiation by sources in dielectric microstructures, and planar photonic crystal waveguides. The work done within the first topic, emission of radiation by sources in dielectric...... microstructures, will be presented in the part I of this thesis consisting of the chapters 2-5. An introductions is given in chapter 2. In part I three methods are presented for calculating spontaneous and classical emission from sources in dielectric microstructures. The first method presented in chapter 3...... is based on the Fermi Golden Rule, and spontaneous emission from emitters in a passive dielectric microstructure is calculated by summing over the emission into each electromagnetic mode of the radiation field. This method is applied to investigate spontaneous emission in a two-dimensional photonic crystal...

  12. In situ observation of the growth of biofouling layer in osmotic membrane bioreactors by multiple fluorescence labeling and confocal laser scanning microscopy.

    Science.gov (United States)

    Yuan, Bo; Wang, Xinhua; Tang, Chuyang; Li, Xiufen; Yu, Guanghui

    2015-05-15

    Since the concept of the osmotic membrane bioreactor (OMBR) was introduced in 2008, it has attracted growing interests for its potential applications in wastewater treatment and reclamation; however, the fouling mechanisms of forward osmosis (FO) membrane especially the development of biofouling layer in the OMBR are not yet clear. Here, the fouled FO membranes were obtained from the OMBRs on days 3, 8 and 25 in sequence, and then the structure and growing rule of the biofouling layer formed on the FO membrane samples were in-situ characterized by multiple fluorescence labeling and confocal laser scanning microscopy (CLSM). CLSM images indicated that the variations in abundance and distribution of polysaccharides, proteins and microorganisms in the biofouling layer during the operation of OMBRs were significantly different. Before the 8th day, their biovolume dramatically increased. Subsequently, the biovolumes of β-d-glucopyranose polysaccharides and proteins continued increasing and leveled off after 8 days, respectively, while the biovolumes of α-d-glucopyranose polysaccharides and microorganisms decreased. Extracellular polymeric substances (EPS) played a significant role in the formation and growth of biofouling layer, while the microorganisms were seldom detected on the upper fouling layer after 3 days. Based on the results obtained in this study, the growth of biofouling layer on the FO membrane surface in the OMBR could be divided into three stages. Initially, EPS was firstly deposited on the FO membrane surface, and then microorganisms associated with EPS located in the initial depositing layer to form clusters. After that, the dramatic increase of the clusters of EPS and microorganisms resulted in the quick growth of biofouling layer during the flux decline of the OMBR. However, when the water flux became stable in the OMBR, some microorganisms and EPS would be detached from the FO membrane surface. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. An Approach for Measuring the Dielectric Strength of OLED Materials

    Directory of Open Access Journals (Sweden)

    Sujith Sudheendran Swayamprabha

    2018-06-01

    Full Text Available Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs. The thin films were deposited on a substrate using physical vapor deposition (PVD under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO/organic material/aluminum (Al and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.

  14. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  15. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  16. Ultrasensitive electrochemical detection of tumor cells based on multiple layer CdS quantum dots-functionalized polystyrene microspheres and graphene oxide - polyaniline composite.

    Science.gov (United States)

    Wang, Jidong; Wang, Xiaoyu; Tang, Hengshan; Gao, Zehua; He, Shengquan; Li, Jian; Han, Shumin

    2018-02-15

    In this work, a novel ultrasensitive electrochemical biosensor was developed for the detection of K562 cell by a signal amplification strategy based on multiple layer CdS QDs functionalized polystyrene microspheres(PS) as bioprobe and graphene oxide(GO) -polyaniline(PANI) composite as modified materials of capture electrode. Due to electrostatic force of different charge, CdS QDs were decorated on the surface of PS by PDDA (poly(diallyldimethyl-ammonium chloride)) through a layer-by-layer(LBL) assemble technology, in which the structure of multiple layer CdS QDs increased the detection signal intensity. Moreover, GO-PANI composite not only enhanced the electron transfer rate, but also increased tumor cells load ratio. The resulting electrochemical biosensor was used to detect K562 cells with a lower detection limit of 3 cellsmL -1 (S/N = 3) and a wider linear range from 10 to 1.0 × 10 7 cellsmL -1 . This sensor was also used for mannosyl groups on HeLa cells and Hct116 cells, which showed high specificity and sensitivity. This signal amplification strategy would provide a novel approach for detection, diagnosis and treatment for tumor cells. Copyright © 2017 Elsevier B.V. All rights reserved.

  17. Chemical vapour deposition of thin-film dielectrics

    International Nuclear Information System (INIS)

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  18. A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication

    Directory of Open Access Journals (Sweden)

    Carlos E. Clement

    2017-01-01

    Full Text Available We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D electrowetting-on-dielectric (EWOD devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL capacitor, an ion gel dielectric offers two to three orders higher specific capacitance (c ≈ 10 μF/cm2 than that of conventional dielectrics such as SiO2. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has

  19. Synthesis, fabrication and characterization of magnetic and dielectric nanoparticles and nanocomposite films

    Science.gov (United States)

    Liu, Xiaohua

    Materials science is an interdisciplinary field investigating the structure-property relationship in solid-state materials scientifically and technologically. Nanoscience is concerned with the distinctive properties that matter exhibits when confined to physical dimensions on the order of 10-9 meters. At these length scales, behaviors of particles or elaborate structures are often governed by the rules of quantum mechanics in addition to the physical properties associated with the bulk material. The work reported here seeks to employ nanocystals, binary nanocomposites and thin films of materials, to build versatile, functional systems and devices. With a focus on dielectric, ferroelectric, and magnetoelectric performance, a series of materials has been synthesized and different types of nanocomposites have been built. Barium strontium titannate particles at various sizes was developed, aiming at high dielectric constant and low loss at high frequency range. Cobalt ferrite-polymer nanocomposite was fabricated with potential magnetoelectric coupling. Along with synthesis, advanced electron microscopies (TEM, SEM, STEM, EELS) at atomic resolution were employed to thoroughly investigate the crystallinity, morphology and composition. By means of spin-coating and printing techniques, single and multiple layered capacitors featuring improved dielectric performance (high k, low loss, high breakdown voltage, etc.) were developed through a) electrode deposition, b) dielectric layer deposition, and c) parylene evaporation. Such capacitors are further incorporated into electric power converters for LED lighting. Hopefully in the future we can make electronic devices more efficient, sustainable, smaller and cheaper. By advancing our knowledge of nanomaterials, especially those with potential of multifunction, energy efficiency and sustainability, we have strived to push the limits of synthesis, characterization, fabrication and property analysis of nanostructures towards new

  20. Enhanced dielectric-wall linear accelerator

    Science.gov (United States)

    Sampayan, Stephen E.; Caporaso, George J.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is enhanced by a high-voltage, fast e-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  1. Experimental Investigation of an X-Band Tunable Dielectric Accelerating Structure

    CERN Document Server

    Kanareykin, Alex; Karmanenko, Sergei F; Nenasheva, Elisaveta; Power, John G; Schoessow, Paul; Semenov, Alexei

    2005-01-01

    Experimental study of a new scheme to tune the resonant frequency for dielectric based accelerating structure (driven either by the wakefield of a beam or an external rf source) is underway. The structure consists of a single layer of conventional dielectric surrounded by a very thin layer of ferroelectric material situated on the outside. Carefully designed electrodes are attached to a thin layer of ferroelectric material. A DC bias can be applied to the electrodes to change the permittivity of the ferroelectric layer and therefore, the dielectric overall resonant frequency can be tuned. In this paper, we present the test results for an 11.424 GHz rectangular DLA prototype structure that the ferroelectric material's dielectric constant of 500 and show that a frequency tuning range of 2% can be achieved. If successful, this scheme would compensate for structure errors caused by ceramic waveguide machining tolerances and dielectric constant heterogeneity.

  2. 3D hierarchical computational model of wood as a cellular material with fibril reinforced, heterogeneous multiple layers

    DEFF Research Database (Denmark)

    Qing, Hai; Mishnaevsky, Leon

    2009-01-01

    A 3D hierarchical computational model of deformation and stiffness of wood, which takes into account the structures of wood at several scale levels (cellularity, multilayered nature of cell walls, composite-like structures of the wall layers) is developed. At the mesoscale, the softwood cell...... cellular model. With the use of the developed hierarchical model, the influence of the microstructure, including microfibril angles (MFAs, which characterizes the orientation of the cellulose fibrils with respect to the cell axis), the thickness of the cell wall, the shape of the cell cross...... is presented as a 3D hexagon-shape-tube with multilayered walls. The layers in the softwood cell are considered as considered as composite reinforced by microfibrils (celluloses). The elastic properties of the layers are determined with Halpin–Tsai equations, and introduced into mesoscale finite element...

  3. Intelligent layered nanoflare: ``lab-on-a-nanoparticle'' for multiple DNA logic gate operations and efficient intracellular delivery

    Science.gov (United States)

    Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

    2014-07-01

    DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of

  4. Interface manipulation in GaxIn1-xAs/InP multiple layer structures grown by chemical beam epitaxy

    NARCIS (Netherlands)

    Rongen, R.T.H.; van Rijswijk, A.J.C.; Leijs, M.R.; Es, van C.M.; Vonk, H.; Wolter, J.H.

    1997-01-01

    In this study the control of interfacial layers in nanometre thin heterostructures is demonstrated by variation of the growth interruption sequence (GIS) at the binary - ternary interfaces. All samples have been prepared by chemical beam epitaxy simultaneously growing the structures on exact (100)

  5. Influence of multiple scattering of a relativistic electron in a periodic layered medium on coherent X-ray radiation

    Energy Technology Data Exchange (ETDEWEB)

    Blazhevich, S. V.; Kos’kova, T. V.; Noskov, A. V., E-mail: noskovbupk@mail.ru [Belgorod State National Research University (Russian Federation)

    2016-01-15

    A dynamic theory of coherent X-ray radiation generated in a periodic layered medium by a relativistic electron multiply scattered by target atoms has been developed. The expressions describing the spectral–angular characteristics of parametric X-ray radiation and diffracted transition radiation are derived. Numerical calculations based on the derived expressions have been performed.

  6. Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2.

    Science.gov (United States)

    Dong, Wen; Hu, Wanbiao; Berlie, Adam; Lau, Kenny; Chen, Hua; Withers, Ray L; Liu, Yun

    2015-11-18

    Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

  7. Tunable optical response at the plasmon-polariton frequency in dielectric-graphene-metamaterial systems

    Science.gov (United States)

    Calvo-Velasco, D. M.; Porras-Montenegro, N.

    2018-04-01

    By using the scattering matrix formalism, it is studied the optical properties of one dimensional photonic crystals made of multiple layers of dielectric and uniaxial anisotropic single negative electric metamaterial with Drude type responses, with inclusions of graphene in between the dielectric-dielectric interfaces (DGMPC). The transmission spectra for transverse electric (TE) and magnetic (TM) polarization are presented as a function of the incidence angle, the graphene chemical potential, and the metamaterial plasma frequencies. It is found for the TM polarization the tunability of the DGMPC optical response with the graphene chemical potential, which can be observed by means of transmission or reflexion bands around the metamaterial plasmon-polariton frequency, with bandwidths depending on both the incidence angle and the metamaterial plasma frequency. Also, the transmission band is observed when losses in the metamaterial slabs are considered for finite systems. The conditions for the appearance of these bands are shown analytically. We consider this work contributes to open new possibilities to the design of photonic devices with DGMPCs.

  8. The scattering properties of anisotropic dielectric spheres on electromagnetic waves

    International Nuclear Information System (INIS)

    Chen Hui; Zhang Weiyi; Wang Zhenlin; Ming Naiben

    2004-01-01

    The scattering coefficients of spheres with dielectric anisotropy are calculated analytically in this paper using the perturbation method. It is found that the different modes of vector spherical harmonics and polarizations are coupled together in the scattering coefficients (c-matrix) in contrast to the isotropic case where all modes are decoupled from each other. The generalized c-matrix is then incorporated into our codes for a vector wave multiple scattering program; the preliminary results on face centred cubic structure show that dielectric anisotropy reduces the symmetry of the scattering c-matrix and removes the degeneracy in photonic band structures composed of isotropic dielectric spheres

  9. Super Dielectric Materials.

    Science.gov (United States)

    Fromille, Samuel; Phillips, Jonathan

    2014-12-22

    Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

  10. Super Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Samuel Fromille

    2014-12-01

    Full Text Available Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz, herein called super dielectric materials (SDM, can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc., filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution, herein called New Paradigm Super (NPS capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density.

  11. Thermally switchable dielectrics

    Science.gov (United States)

    Dirk, Shawn M.; Johnson, Ross S.

    2013-04-30

    Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

  12. On dielectric breakdown statistics

    International Nuclear Information System (INIS)

    Tuncer, Enis; James, D Randy; Sauers, Isidor; Ellis, Alvin R; Pace, Marshall O

    2006-01-01

    In this paper, we investigate the dielectric breakdown data of some insulating materials and focus on the applicability of the two- and three-parameter Weibull distributions. A new distribution function is also proposed. In order to assess the model distribution's trustworthiness, we employ the Monte Carlo technique and, randomly selecting data-subsets from the whole dielectric breakdown data, determine whether the selected probability functions accurately describe the breakdown data. The utility and strength of the proposed expression are illustrated distinctly by the numerical procedure. The proposed expression is shown to be a valuable alternative to the Weibull ones

  13. Ionic Structure at Dielectric Interfaces

    Science.gov (United States)

    Jing, Yufei

    The behavior of ions in liquids confined between macromolecules determines the outcome of many nanoscale assembly processes in synthetic and biological materials such as colloidal dispersions, emulsions, hydrogels, DNA, cell membranes, and proteins. Theoretically, the macromolecule-liquid boundary is often modeled as a dielectric interface and an important quantity of interest is the ionic structure in a liquid confined between two such interfaces. The knowledge gleaned from the study of ionic structure in such models can be useful in several industrial applications, such as biosensors, lithium-ion batteries double-layer supercapacitors for energy storage and seawater desalination. Electrostatics plays a critical role in the development of such functional materials. Many of the functions of these materials, result from charge and composition heterogeneities. There are great challenges in solving electrostatics problems in heterogeneous media with arbitrary shapes because electrostatic interactions remains unknown but depend on the particular density of charge distributions. Charged molecules in heterogeneous media affect the media's dielectric response and hence the interaction between the charges is unknown since it depends on the media and on the geometrical properties of the interfaces. To determine the properties of heterogeneous systems including crucial effects neglected in classical mean field models such as the hard core of the ions, the dielectric mismatch and interfaces with arbitrary shapes. The effect of hard core interactions accounts properly for short range interactions and the effect of local dielectric heterogeneities in the presence of ions and/or charged molecules for long-range interactions are both analyzed via an energy variational principle that enables to update charges and the medium's response in the same simulation time step. In particular, we compute the ionic structure in a model system of electrolyte confined by two planar dielectric

  14. Dielectric barrier discharges applied for soft ionization and their mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Sebastian; Klute, Felix David; Schütz, Alexander; Franzke, Joachim, E-mail: joachim.franzke@isas.de

    2017-01-25

    Dielectric barrier discharges are used for analytical applications as dissociative source for optical emission spectrometry and for ambient-ionization techniques. In the range of ambient-ionization techniques it has attracted much attention in fields like food safety, biological analysis, mass spectrometry for reaction monitoring and imaging forensic identification. In this review some examples are given for the application as desorption/ionization source as well as for the sole application as ionization source with different sample introductions. It will be shown that the detection might depend on the certain distance of the plasma in reference to the sample or the kind of discharge which might be produced by different shapes of the applied high voltage. Some attempts of characterization are presented. A more detailed characterization of the dielectric barrier discharge realized with two ring electrodes, each separately covered with a dielectric layer, is described. - Highlights: • Dielectric barrier discharge applied as desorption/ionization source. • Dielectric barrier discharge applied solely as ionization source. • Different geometries in order to maintain soft ionization. • Characterization of the LTP probe. • Dielectric barrier discharges with two dielectric barriers (ring-ring shape).

  15. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

    2016-01-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  16. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  17. Enhancement of Fracture Resistance by Multiple Cracks in Layered Structures under Mode I and Mix Mode Loading

    DEFF Research Database (Denmark)

    Goutianos, Stergios; Sørensen, Bent F.

    beams bonded together with a thermoset adhesive, more delamination cracks could be developed next to the main/primary adhesive/laminate crack. An analytical model, based on the J integral, was developed for multiple delaminations [3]. It is shown that the maximum possible increase (upper limit...

  18. Plasmon enhanced near-field radiative heat transfer for graphene covered dielectrics

    NARCIS (Netherlands)

    Svetovoy, Vitaly; van Zwol, P.J.; Chevrier, J.

    2012-01-01

    It is shown that a graphene layer on top of a dielectric slab can dramatically influence the ability of this dielectric for radiative heat exchange turning a poor heat emitter/absorber into a good one and vice versa. The effect of graphene is related to thermally excited plasmons. The frequency of

  19. Mathematic modeling of the method of measurement relative dielectric permeability

    Science.gov (United States)

    Plotnikova, I. V.; Chicherina, N. V.; Stepanov, A. B.

    2018-05-01

    The method of measuring relative permittivity’s and the position of the interface between layers of a liquid medium is considered in the article. An electric capacitor is a system consisting of two conductors that are separated by a dielectric layer. It is mathematically proven that at any given time it is possible to obtain the values of the relative permittivity in the layers of the liquid medium and to determine the level of the interface between the layers of the two-layer liquid. The estimation of measurement errors is made.

  20. Prediction of beta-turns and beta-turn types by a novel bidirectional Elman-type recurrent neural network with multiple output layers (MOLEBRNN).

    Science.gov (United States)

    Kirschner, Andreas; Frishman, Dmitrij

    2008-10-01

    Prediction of beta-turns from amino acid sequences has long been recognized as an important problem in structural bioinformatics due to their frequent occurrence as well as their structural and functional significance. Because various structural features of proteins are intercorrelated, secondary structure information has been often employed as an additional input for machine learning algorithms while predicting beta-turns. Here we present a novel bidirectional Elman-type recurrent neural network with multiple output layers (MOLEBRNN) capable of predicting multiple mutually dependent structural motifs and demonstrate its efficiency in recognizing three aspects of protein structure: beta-turns, beta-turn types, and secondary structure. The advantage of our method compared to other predictors is that it does not require any external input except for sequence profiles because interdependencies between different structural features are taken into account implicitly during the learning process. In a sevenfold cross-validation experiment on a standard test dataset our method exhibits the total prediction accuracy of 77.9% and the Mathew's Correlation Coefficient of 0.45, the highest performance reported so far. It also outperforms other known methods in delineating individual turn types. We demonstrate how simultaneous prediction of multiple targets influences prediction performance on single targets. The MOLEBRNN presented here is a generic method applicable in a variety of research fields where multiple mutually depending target classes need to be predicted. http://webclu.bio.wzw.tum.de/predator-web/.

  1. Evaluation of the feasibility for detecting hidden corrosion damage in multi-layer gusset plates using multiple inspection techniques

    International Nuclear Information System (INIS)

    Cobb, Adam C.; Duffer, Charles E.; Light, Glenn M.

    2014-01-01

    Gusset plates are used to connect the members in truss bridges and they are usually inspected using calipers or conventional thickness measurement ultrasonic testing (UT) devices. The damage mechanism of particular concern in gusset plates is corrosion and the regions most susceptible to corrosion damage are on the gusset interior surface where it intersects the chord, diagonal, and vertical members from water collecting at the interfaces. For heavily loaded gusset plates, one or more shingle plates are used to reinforce the gusset plate, creating a multi-layer structure. While the areas with corrosion damage remain near the members on the gusset plate, the shingle plates cover the gusset plate and greatly limit the surface access to the gusset plate, making UT thickness measurement impractical. Because of the critical nature of the gussets, a viable inspection strategy for multi-layer gusset assemblies must be developed. The premise of this research and development effort was to develop viable, field-deployable inspection approaches for this problem area. This paper presents three separate inspection approaches: two ultrasonic-based techniques and one radiographic approach. Each of these techniques was evaluated on a mock-up specimen provided by the Federal Highway Administration (FHWA) that is representative of gusseted connection from a truss bridge

  2. Evaluation of the feasibility for detecting hidden corrosion damage in multi-layer gusset plates using multiple inspection techniques

    Energy Technology Data Exchange (ETDEWEB)

    Cobb, Adam C.; Duffer, Charles E.; Light, Glenn M. [Southwest Research Institute, 6220 Culebra Road, San Antonio, TX 78238-5166 (United States)

    2014-02-18

    Gusset plates are used to connect the members in truss bridges and they are usually inspected using calipers or conventional thickness measurement ultrasonic testing (UT) devices. The damage mechanism of particular concern in gusset plates is corrosion and the regions most susceptible to corrosion damage are on the gusset interior surface where it intersects the chord, diagonal, and vertical members from water collecting at the interfaces. For heavily loaded gusset plates, one or more shingle plates are used to reinforce the gusset plate, creating a multi-layer structure. While the areas with corrosion damage remain near the members on the gusset plate, the shingle plates cover the gusset plate and greatly limit the surface access to the gusset plate, making UT thickness measurement impractical. Because of the critical nature of the gussets, a viable inspection strategy for multi-layer gusset assemblies must be developed. The premise of this research and development effort was to develop viable, field-deployable inspection approaches for this problem area. This paper presents three separate inspection approaches: two ultrasonic-based techniques and one radiographic approach. Each of these techniques was evaluated on a mock-up specimen provided by the Federal Highway Administration (FHWA) that is representative of gusseted connection from a truss bridge.

  3. Dielectric response of planar relativistic quantum plasmas

    International Nuclear Information System (INIS)

    Bardos, D.C.; Frankel, N.E.

    1991-01-01

    The dielectric response of planar relativistic charged particle-antiparticle plasmas is investigated, treating Fermi and Bose plasmas. The conductivity tensor in each case is derived in the self-consistent Random Phase Approximation. The tensors are then evaluated at zero temperature for the case of no external fields, leading to explicit dispersion relations for the electrodynamic modes of the plasma. The longitudinal and transverse modes are in general coupled for plasma layers. This coupling vanishes, however, in the zero field case, allowing 'effective' longitudinal and transverse dielectric functions to be defined in terms of components of the conductivity tensor. Solutions to the longitudinal mode equations (i.e. plasmon modes) are exhibited, while purely transverse modes are found not to exist. In the case of the Bose plasma the screening of a test charge is investigated in detail. 41 refs., 1 fig

  4. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Science.gov (United States)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  5. Surface plasmon polariton Akhmediev Breather in a dielectric-metal-dielectric geometry with subwavelength thickness

    Science.gov (United States)

    Devi, Koijam Monika; Porsezian, K.; Sarma, Amarendra K.

    2018-05-01

    We report Akhmediev Breather solutions in a nonlinear multilayer structure comprising of a metal sandwiched between two semi-infinite dielectric layers with subwavelength thickness. These nonlinear solutions inherit the properties of Surface plasmon polaritons and its dynamics is governed by the Nonlinear Schrodinger equation. The breather evolution is studied for specific values of nonlinear and dispersion parameters. An experimental scheme to observe these breathers is also proposed.

  6. Open-source tool for automatic import of coded surveying data to multiple vector layers in GIS environment

    Directory of Open Access Journals (Sweden)

    Eva Stopková

    2016-12-01

    Full Text Available This paper deals with a tool that enables import of the coded data in a singletext file to more than one vector layers (including attribute tables, together withautomatic drawing of line and polygon objects and with optional conversion toCAD. Python script v.in.survey is available as an add-on for open-source softwareGRASS GIS (GRASS Development Team. The paper describes a case study basedon surveying at the archaeological mission at Tell-el Retaba (Egypt. Advantagesof the tool (e.g. significant optimization of surveying work and its limits (demandson keeping conventions for the points’ names coding are discussed here as well.Possibilities of future development are suggested (e.g. generalization of points’names coding or more complex attribute table creation.

  7. Variable sulfur isotope composition of sulfides provide evidence for multiple sources of contamination in the Rustenburg Layered Suite, Bushveld Complex

    Science.gov (United States)

    Magalhães, Nivea; Penniston-Dorland, Sarah; Farquhar, James; Mathez, Edmond A.

    2018-06-01

    The Rustenburg Layered Suite (RLS) of the Bushveld Complex (BC) is famous for its platinum group element (PGE) ore, which is hosted in sulfides. The source of sulfur necessary to generate this type of mineralization is inferred to be the host rock of the intrusion. The RLS has a sulfur isotopic signature that indicates the presence of Archean surface-derived material (Δ33 S ≠ 0) in the magma. This signature, with an average value of Δ33 S = 0.112 ± 0.024 ‰, deviates from the expected Δ33 S value of the mantle of 0 ± 0.008 ‰. Previous work suggested that this signature is uniform throughout the RLS, which contrasts with radiogenic isotopes which vary throughout the igneous stratigraphy of the RLS. In this study, samples from key intervals within the igneous stratigraphy were analyzed, showing that Δ33 S values vary in the same stratigraphic levels as Sr and Nd isotopes. However, the variation is not consistent; in some levels there is a positive correlation and in others a negative correlation. This observation suggests that in some cases distinct magma pulses contained assimilated sulfur from different sources. Textural analysis shows no evidence for late addition of sulfur. These results also suggest that it is unlikely that large-scale assimilation and/or efficient mixing of host rock material in a single magma chamber occurred during emplacement. The data do not uniquely identify the source of sulfur in the different layers of the RLS, but the variation in sulfur isotope composition and its relationship to radiogenic isotope data calls for a reevaluation of the models for the formation and evolution of the RLS, which has the potential to impact the knowledge of how PGE deposits form.

  8. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Partida-Manzanera, T.; Roberts, J. W.; Sedghi, N.; Potter, R. J.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al 2 O 3 with high dielectric constant (high-κ) Ta 2 O 5 for gate dielectric applications. (Ta 2 O 5 ) x (Al 2 O 3 ) 1−x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al x Ga 1−x N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta 2 O 5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al 2 O 3 to 4.6 eV for pure Ta 2 O 5 . The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al 2 O 3 up to 25.6 for Ta 2 O 5 . The effect of post-deposition annealing in N 2 at 600 °C on the interfacial properties of undoped Al 2 O 3 and Ta-doped (Ta 2 O 5 ) 0.12 (Al 2 O 3 ) 0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al 2 O 3 /GaN-HEMT and (Ta 2 O 5 ) 0.16 (Al 2 O 3 ) 0.84 /GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al 2 O 3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents

  9. Development of a diplexer based on dielectric beam splitters

    International Nuclear Information System (INIS)

    D'Arcangelo, O.; Alessi, E.; Bin, W.; Bruschi, A.; Moro, A.; Muzzini, V.

    2011-01-01

    Controllable power combination and distribution of multiple sources into multiple transmission lines may increase efficiency and flexibility of ECRH systems. A new quasi-optical version of diplexer based on a resonating system, coupling two transmission lines, is under development at IFP-CNR. Two dielectric beam splitters work as input/output ports for the diplexer, which can be thought as a Fabry-Perot resonator. A third beam splitter can be inserted in the middle of the resonator. In this case the diplexer looks like a pair of mirrored resonators coupled by through the central splitter. Each beam splitter is made of a water-free silica layer, three quarter of wavelength thick at 140 GHz. The simulated performances were tested as a function of the frequency on the two splitters simpler model. Preliminary results confirm qualitatively theoretical predictions as well as the good channel separation obtainable with the three splitters version. Present work describes the system realization together with the low power tests performed.

  10. Mouse androgenetic embryonic stem cells differentiated to multiple cell lineages in three embryonic germ layers in vitro.

    Science.gov (United States)

    Teramura, Takeshi; Onodera, Yuta; Murakami, Hideki; Ito, Syunsuke; Mihara, Toshihiro; Takehara, Toshiyuki; Kato, Hiromi; Mitani, Tasuku; Anzai, Masayuki; Matsumoto, Kazuya; Saeki, Kazuhiro; Fukuda, Kanji; Sagawa, Norimasa; Osoi, Yoshihiko

    2009-06-01

    The embryos of some rodents and primates can precede early development without the process of fertilization; however, they cease to develop after implantation because of restricted expressions of imprinting genes. Asexually developed embryos are classified into parthenote/gynogenote and androgenote by their genomic origins. Embryonic stem cells (ESCs) derived from asexual origins have also been reported. To date, ESCs derived from parthenogenetic embryos (PgESCs) have been established in some species, including humans, and the possibility to be alternative sources for autologous cell transplantation in regenerative medicine has been proposed. However, some developmental characteristics, which might be important for therapeutic applications, such as multiple differentiation capacity and transplantability of the ESCs of androgenetic origin (AgESCs) are uncertain. Here, we induced differentiation of mouse AgESCs and observed derivation of neural cells, cardiomyocytes and hepatocytes in vitro. Following differentiated embryoid body (EB) transplantation in various mouse strains including the strain of origin, we found that the EBs could engraft in theoretically MHC-matched strains. Our results indicate that AgESCs possess at least two important characteristics, multiple differentiation properties in vitro and transplantability after differentiation, and suggest that they can also serve as a source of histocompatible tissues for transplantation.

  11. Dynamics of dielectric barrier discharges in coplanar arrangements

    International Nuclear Information System (INIS)

    Gibalov, Valentin I; Pietsch, Gerhard J

    2004-01-01

    The development of a discharge channel in coplanar dielectric barrier arrangements is investigated numerically. Its behaviour in oxygen, like the spatial and temporal distributions of the field strength, charged and neutral particles and energy density, is described in detail. It is found that the streamer development is mainly determined by photoemission. A cathode layer appears near the position where the cathode directed streamer touches the dielectric surface. Secondary electron emission by ion collisions becomes significant and the parameters of the cathode layer are near those of a normal glow discharge. The charge transfer and energy release happen in the conductive channel of the discharge, which appears on the dielectric surface as a result of the cathode streamer development. The field strength in the conductive channel is nearly constant and about 70-100 Td in oxygen and air

  12. Investigation of Vacuum Insulator Surface Dielectric Strength with Nanosecond Pulses

    International Nuclear Information System (INIS)

    Nunnally, W.C.; Krogh, M.; Williams, C.; Trimble, D.; Sampayan, S.; Caporaso, G.

    2003-01-01

    The maximum vacuum insulator surface dielectric strength determines the acceleration electric field gradient possible in a short pulse accelerator. Previous work has indicated that higher electric field strengths along the insulator-vacuum interface might be obtained as the pulse duration is decreased. In this work, a 250 kV, single ns wide impulse source was applied to small diameter, segmented insulators samples in a vacuum to evaluate the multi-layer surface dielectric strength of the sample construction. Resonances in the low inductance test geometry were used to obtain unipolar, pulsed electric fields in excess of 100 MV/m on the insulator surface. The sample construction, experimental arrangement and experimental results are presented for the initial data in this work. Modeling of the multi-layer structure is discussed and methods of improving insulator surface dielectric strength in a vacuum are proposed

  13. Dielectric nanoresonators for light manipulation

    Science.gov (United States)

    Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

    2017-07-01

    Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

  14. Plasmon analysis and homogenization in plane layered photonic crystals and hyperbolic metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Davidovich, M. V., E-mail: davidovichmv@info.sgu.ru [Saratov State University (Russian Federation)

    2016-12-15

    Dispersion equations are obtained and analysis and homogenization are carried out in periodic and quasiperiodic plane layered structures consisting of alternating dielectric layers, metal and dielectric layers, as well as graphene sheets and dielectric (SiO{sub 2}) layers. Situations are considered when these structures acquire the properties of hyperbolic metamaterials (HMMs), i.e., materials the real parts of whose effective permittivity tensor have opposite signs. It is shown that the application of solely dielectric layers is more promising in the context of reducing losses.

  15. Dielectric properties of polyethylene

    International Nuclear Information System (INIS)

    Darwish, S.; Riad, A.S.; El-Shabasy, M.

    2005-01-01

    The temperature dependence of dielectric properties in polyethylene was measured in the frequency range from 10 to 105 Hz. The frequency dependence of the complex impedance in the complex plane could be fitted by semicircles. The system could be represented by an equivalent circuit of a bulk resistance in series with parallel surface resistance-capacitance combination. The relaxation time, has been evaluated from experimental results. Results reveal that the temperature dependence, is a thermally activated process

  16. Dielectric Wakefield Researches

    International Nuclear Information System (INIS)

    Kiselev, V.A.; Linnik, A.F.; Onishchenko, N.I.; Uskov, V.V.; Marshall, T.C.

    2006-01-01

    Excitation of wakefield in cylindrical dielectric waveguide/resonator by a sequence of relativistic electron bunches was investigated using an electron linac 'Almaz-2' (4.5 MeV, 6·10 3 bunches of duration 60 ps and charge 0.32 nC each). Energy spectrum of electrons, radial topography and longitudinal distribution of wakefield, and total energy of excited wakefield were measured by means of magnetic analyzer, high frequency probe, and a sensitive calorimeter

  17. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1983-06-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)epsilong that are attached to the links b = (x+esub(μ),x) of the lattice and take their values in the linear space g which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)osub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportionalosub(i)osub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson loop expectation values show an area law decay, if the Euclidean action has certain qualitative features which imply that PHI = 0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  18. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1984-01-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)element ofG that are attached to the links b = (x+esub(μ), x) of the lattice and take their values in the linear space G which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)sigmasub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportional sigmasub(i)sigmasub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder-Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson-loop expectation values show an area law decay, if the euclidean action has certain qualitative features which imply that PHI=0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  19. A FDTD solution of scattering of laser beam with orbital angular momentum by dielectric particles: Far-field characteristics

    Science.gov (United States)

    Sun, Wenbo; Hu, Yongxiang; Weimer, Carl; Ayers, Kirk; Baize, Rosemary R.; Lee, Tsengdar

    2017-02-01

    Electromagnetic (EM) beams with orbital angular momentum (OAM) may have great potential applications in communication technology and in remote sensing of the Earth-atmosphere system and outer planets. Study of their interaction with optical lenses and dielectric or metallic objects, or scattering of them by particles in the Earth-atmosphere system, is a necessary step to explore the advantage of the OAM EM beams. In this study, the 3-dimensional (3D) scattered-field (SF) finite-difference time domain (FDTD) technique with the convolutional perfectly matched layer (CPML) absorbing boundary conditions (ABC) is applied to calculate the scattering of the purely azimuthal (the radial mode number is assumed to be zero) Laguerre-Gaussian (LG) beams with the OAM by dielectric particles. We found that for OAM beam's interaction with dielectric particles, the forward-scattering peak in the conventional phase function (P11) disappears, and light scattering peak occurs at a scattering angle of 15° to 45°. The disappearance of forward-scattering peak means that, in laser communications most of the particle-scattered noise cannot enter the receiver, thus the received light is optimally the original OAM-encoded signal. This feature of the OAM beam also implies that in lidar remote sensing of the atmospheric particulates, most of the multiple-scattering energy will be off lidar sensors, and this may result in an accurate profiling of particle layers in the atmosphere or in the oceans by lidar, or even in the ground when a ground penetration radar (GPR) with the OAM is applied. This far-field characteristics of the scattered OAM light also imply that the optical theorem, which is derived from plane-parallel wave scattering case and relates the forward scattering amplitude to the total cross section of the scatterer, is invalid for the scattering of OAM beams by dielectric particles.

  20. Stimulated Raman gain scattering in thin planar dielectric waveguides

    NARCIS (Netherlands)

    Kanger, Johannes S.; Otto, Cornelis; Greve, Jan

    1995-01-01

    The stimulated Raman gain effect in planar dielectric waveguides is analyzed for the study of thin layers. Calculations show high gain factors and predict the possibility of detecting monolayers. Compared with those for methods based on ref lection, the gain can be 4 orders of magnitude higher for a

  1. Dielectric properties of lunar surface

    Science.gov (United States)

    Yushkova, O. V.; Kibardina, I. N.

    2017-03-01

    Measurements of the dielectric characteristics of lunar soil samples are analyzed in the context of dielectric theory. It has been shown that the real component of the dielectric permittivity and the loss tangent of rocks greatly depend on the frequency of the interacting electromagnetic field and the soil temperature. It follows from the analysis that one should take into account diurnal variations in the lunar surface temperature when interpreting the radar-sounding results, especially for the gigahertz radio range.

  2. Multiple layers of temporal and spatial control regulate accumulation of the fruiting body-specific protein APP in Sordaria macrospora and Neurospora crassa.

    Science.gov (United States)

    Nowrousian, Minou; Piotrowski, Markus; Kück, Ulrich

    2007-07-01

    During fungal fruiting body development, specialized cell types differentiate from vegetative mycelium. We have isolated a protein from the ascomycete Sordaria macrospora that is not present during vegetative growth but accumulates in perithecia. The protein was sequenced by mass spectrometry and the corresponding gene was termed app (abundant perithecial protein). app transcript occurs only after the onset of sexual development; however, the formation of ascospores is not a prerequisite for APP accumulation. The transcript of the Neurospora crassa ortholog is present prior to fertilization, but the protein accumulates only after fertilization. In crosses of N. crassa Deltaapp strains with the wild type, APP accumulates when the wild type serves as female parent, but not in the reciprocal cross; thus, the presence of a functional female app allele is necessary and sufficient for APP accumulation. These findings highlight multiple layers of temporal and spatial control of gene expression during fungal development.

  3. Dielectric barrier discharge processing of aerospace materials

    International Nuclear Information System (INIS)

    Scott, S J; Figgures, C C; Dixon, D G

    2004-01-01

    We report the use of atmospheric pressure, air based, dielectric barrier discharges (DBD) to treat materials commonly used in the aerospace industries. The material samples were processed using a test-bed of a conventional DBD configuration in which the sample formed one of the electrodes and was placed in close proximity to a ceramic electrode. The discharges generated a powerful, cold oxidizing environment which was able to remove organic contaminants, etch primer and paint layers, oxidize aluminium and roughen carbon fibre composites by the selective removal of resin

  4. Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

    Science.gov (United States)

    Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

    2014-04-01

    Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

  5. Dielectric Properties Of Nanoferrites

    International Nuclear Information System (INIS)

    Jankov, Stevan B.; Cvejic, Zeljka N.; Rakic, Srdjan; Srdic, Vladimir

    2007-01-01

    Dielectric properties: permittivity, loss factor, tan delta and ionic conductivity of nanostructured ferrites have been measured. Samples used were nickel, zinc and yttrium doped ferrites mixed in various ratios. The synthesis has been performed using precipitation method and obtained powders were pressed in pellets under varying pressure. X-ray diffractography approach for the refinement of structure and microstructural analysis has been performed. All parameters have been measured in 1 Hz to 100 kHz frequency range and 30 deg. C to 80 deg. C temperature range. Significant improvements in permittivity, loss factor and ionic conductivity comparing to bulk samples have been observed

  6. Dielectric materials and electrostatics

    CERN Document Server

    Gallot-Lavalle, Olivier

    2013-01-01

    An introduction to the physics of electrical insulation, this book presents the physical foundations of this discipline and the resulting applications. It is structured in two parts. The first part presents a mathematical and intuitive approach to dielectrics; various concepts, including polarization, induction, forces and losses are discussed. The second part provides readers with the keys to understanding the physics of solid, liquid and gas insulation. It comprises a phenomenological description of discharges in gas and its resulting applications. Finally, the main electrical properties

  7. The possibility of giant dielectric materials for multilayer ceramic capacitors.

    Science.gov (United States)

    Ishii, Tatsuya; Endo, Makoto; Masuda, Kenichiro; Ishida, Keisuke

    2013-02-11

    There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO 3 with SiO 2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.

  8. A FDTD solution of scattering of laser beam with orbital angular momentum by dielectric particles: Far-field characteristics

    International Nuclear Information System (INIS)

    Sun, Wenbo; Hu, Yongxiang; Weimer, Carl; Ayers, Kirk; Baize, Rosemary R.; Lee, Tsengdar

    2017-01-01

    Electromagnetic (EM) beams with orbital angular momentum (OAM) may have great potential applications in communication technology and in remote sensing of the Earth-atmosphere system and outer planets. Study of their interaction with optical lenses and dielectric or metallic objects, or scattering of them by particles in the Earth-atmosphere system, is a necessary step to explore the advantage of the OAM EM beams. In this study, the 3-dimensional (3D) scattered-field (SF) finite-difference time domain (FDTD) technique with the convolutional perfectly matched layer (CPML) absorbing boundary conditions (ABC) is applied to calculate the scattering of the purely azimuthal (the radial mode number is assumed to be zero) Laguerre–Gaussian (LG) beams with the OAM by dielectric particles. We found that for OAM beam's interaction with dielectric particles, the forward-scattering peak in the conventional phase function (P11) disappears, and light scattering peak occurs at a scattering angle of ~15° to 45°. The disappearance of forward-scattering peak means that, in laser communications most of the particle-scattered noise cannot enter the receiver, thus the received light is optimally the original OAM-encoded signal. This feature of the OAM beam also implies that in lidar remote sensing of the atmospheric particulates, most of the multiple-scattering energy will be off lidar sensors, and this may result in an accurate profiling of particle layers in the atmosphere or in the oceans by lidar, or even in the ground when a ground penetration radar (GPR) with the OAM is applied. This far-field characteristics of the scattered OAM light also imply that the optical theorem, which is derived from plane-parallel wave scattering case and relates the forward scattering amplitude to the total cross section of the scatterer, is invalid for the scattering of OAM beams by dielectric particles. - Highlights: • Scattering of orbital angular momentum (OAM) laser beam by dielectric

  9. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  10. Discharge ignition near a dielectric

    NARCIS (Netherlands)

    Sobota, A.; Veldhuizen, van E.M.; Stoffels, W.W.

    2008-01-01

    Electrical breakdown in noble gas near a dielectric is an important issue in lighting industry. In order to investigate the influence of the dielectric on the ignition process, we perform measurements in argon, with pressure varying from 0.1 to 1 bar, using a pin–pin electrode geometry. Here, we

  11. Generalized dielectric permittivity tensor

    International Nuclear Information System (INIS)

    Borzdov, G.N.; Barkovskii, L.M.; Fedorov, F.I.

    1986-01-01

    The authors deal with the question of what is to be done with the formalism of the electrodynamics of dispersive media based on the introduction of dielectric-permittivity tensors for purely harmonic fields when Voigt waves and waves of more general form exist. An attempt is made to broaden and generalize the formalism to take into account dispersion of waves of the given type. In dispersive media, the polarization, magnetization, and conduction current-density vectors of point and time are determined by the values of the electromagnetic field vectors in the vicinity of this point (spatial dispersion) in the preceding instants of time (time dispersion). The dielectric-permittivity tensor and other tensors of electrodynamic parameters of the medium are introduced in terms of a set of evolution operators and not the set of harmonic function. It is noted that a magnetic-permeability tensor and an elastic-modulus tensor may be introduced for an acoustic field in dispersive anisotropic media with coupling equations of general form

  12. Dielectric Actuation of Polymers

    Science.gov (United States)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  13. How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS2

    DEFF Research Database (Denmark)

    Hüser, Falco; Olsen, Thomas; Thygesen, Kristian Sommer

    2013-01-01

    We present first-principles many-body calculations of the dielectric constant, quasiparticle band structure, and optical absorption spectrum of monolayer MoS2 using a supercell approach. As the separation between the periodically repeated layers is increased, the dielectric function of the layer...

  14. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.; Quevedo-Ló pez, Manuel Angel Quevedo; Alshareef, Husam N.; Gnade, Bruce E.; Ramí rez-Bon, Rafael

    2010-01-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  15. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.

    2010-03-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  16. Ultrashort-pulse laser excitation and damage of dielectric materials

    DEFF Research Database (Denmark)

    Haahr-Lillevang, Lasse; Balling, Peter

    2015-01-01

    Ultrashort-pulse laser excitation of dielectrics is an intricate problem due to the strong coupling between the rapidly changing material properties and the light. In the present paper, details of a model based on a multiple-rate-equation description of the conduction band are provided. The model...

  17. Modeling short-pulse laser excitation of dielectric materials

    DEFF Research Database (Denmark)

    Wædegaard, Kristian Juncher; Sandkamm, Ditte Både; Haahr-Lillevang, Lasse

    2014-01-01

    A theoretical description of ultrashort-pulse laser excitation of dielectric materials based on strong-field excitation in the Keldysh picture combined with a multiple-rateequation model for the electronic excitation including collisional processes is presented. The model includes light attenuation...

  18. Dielectric Elastomers for Fluidic and Biomedical Applications

    Science.gov (United States)

    McCoul, David James

    integrated rigid elements for the treatment of chronic acid reflux disorders. This dielectric elastomer ring actuator consists of a two-layer stack of prestretched VHB(TM) 4905 with SWCNT electrodes. Its transverse prestretch was maintained by selective rigidification of the VHB(TM) using a UV-curable, solution-processable polymer network. The actuator exhibited a maximum vertical (circumferential) actuation strain of 25% at 3.4 kV in an 24.5 g weighted isotonic setup. It also exhibited the required passive force of 0.25 N and showed a maximum force drop of 0.11 N at 3.32 kV during isometric tests at 4.5 cm. Modeling was performed to determine the prestretches necessary to achieve maximum strain while simultaneously exerting the force of 0.25 N, which corresponds to a required pinching pressure of 3.35 kPa. Modeling also determined the spacing between and number of rigid elements required. The theoretical model curves were adjusted to account for the passive rigid elements, as well as for the addition of margins; the resulting plots agrees well with experiment. The performance of the DE band is comparable to that of living muscle, and this is the first application of dielectric elastomer actuators in the design of a medical implant for the treatment of gastrointestinal disorders. Related applications that could result from this technology are very low-profile linear peristaltic pumps, artificial intestines, an artificial urethra, and artificial blood vessels.

  19. Significantly Elevated Dielectric and Energy Storage Traits in Boron Nitride Filled Polymer Nano-composites with Topological Structure

    Science.gov (United States)

    Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Li, Shichun; Peng, Cheng

    2018-03-01

    Interface induced polarization has a prominent influence on dielectric properties of 0-3 type polymer based composites containing Si-based semi-conductors. The disadvantages of composites were higher dielectric loss, lower breakdown strength and energy storage density, although higher permittivity was achieved. In this work, dielectric, conductive, breakdown and energy storage properties of four nano-composites have been researched. Based on the cooperation of fluoropolymer/alpha-SiC layer and fluoropolymer/hexagonal-BN layer, it was confirmed constructing the heterogeneous layer-by-layer composite structure rather than homogeneous mono-layer structure could significantly reduce dielectric loss, promote breakdown strength and increase energy storage density. The former worked for a larger dielectric response and the latter layer acted as a robust barrier of charge carrier transfer. The best nano-composite could possess a permittivity of 43@100 Hz ( 3.3 times of polymer), loss of 0.07@100 Hz ( 37% of polymer), discharged energy density of 2.23 J/cm3@249 kV/cm ( 10 times of polymer) and discharged energy efficiency of 54%@249 kV/cm ( 5 times of polymer). This work might enlighten a facile route to achieve the promising high energy storage composite dielectrics by constructing the layer-by-layer topological structure.

  20. Mathematical Modeling of Electrical Conductivity of Dielectric with Dispersed Metallic Inclusions

    Directory of Open Access Journals (Sweden)

    V. S. Zarubin

    2015-01-01

    Full Text Available Composites are increasingly used for application in engineering as structural, thermal protection and functional materials, including dielectrics, because of a wide variety of properties. The relative dielectric constant and the dielectric loss tangent are basic functional characteristics of a composite used as a dielectric. The quantitative level of these characteristics is mainly affected by the properties of the composite matrix and inclusions as well as their shape and volume concentration. Metallic inclusions in a dielectric, which serves as a function of the composite matrix, expand electrical properties of the composite in particular increase its dielectric constant and dielectric loss tangent and thereby greatly expand its application field. Dielectric losses are defined by the imaginary component of the complex value of the relative dielectric constant of the dielectric. At a relatively low vibration frequency of electromagnetic field affecting the dielectric, this value is proportional to the electrical conductivity of the dielectric and inversely proportional to the frequency. In order to predict the expected value of the electric conductivity of the dielectric with metallic inclusions, a mathematical model that properly describes the structure of the composite and the electrical interaction of the matrix and inclusions is required.In the paper, a mathematical model of the electrical interaction of the representative element of the composite structure and a homogeneous isotropic medium with electrical conductivity, which is desired characteristics of the composite, is constructed. Globular shape of the metallic inclusions as an average statistical form of dispersed inclusions with a comparable size in all directions is adopted. The inclusion is covered with a globular layer of electrical insulation to avoid percolation with increasing volume concentration of inclusions. Outer globular layer of representative structure of composite

  1. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} as potential gate dielectrics for GaN/Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Partida-Manzanera, T., E-mail: sgtparti@liv.ac.uk [Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH (United Kingdom); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634 (Singapore); Roberts, J. W.; Sedghi, N.; Potter, R. J. [Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH (United Kingdom); Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634 (Singapore)

    2016-01-14

    This paper describes a method to optimally combine wide band gap Al{sub 2}O{sub 3} with high dielectric constant (high-κ) Ta{sub 2}O{sub 5} for gate dielectric applications. (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta{sub 2}O{sub 5} molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al{sub 2}O{sub 3} to 4.6 eV for pure Ta{sub 2}O{sub 5}. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al{sub 2}O{sub 3} up to 25.6 for Ta{sub 2}O{sub 5}. The effect of post-deposition annealing in N{sub 2} at 600 °C on the interfacial properties of undoped Al{sub 2}O{sub 3} and Ta-doped (Ta{sub 2}O{sub 5}){sub 0.12}(Al{sub 2}O{sub 3}){sub 0.88} films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al{sub 2}O{sub 3}/GaN-HEMT and (Ta{sub 2}O{sub 5}){sub 0.16}(Al{sub 2}O{sub 3}){sub 0.84}/GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al{sub 2}O{sub 3} can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

  2. High-efficient light absorption of monolayer graphene via cylindrical dielectric arrays and the sensing application

    Science.gov (United States)

    Zhou, Peng; Zheng, Gaige

    2018-04-01

    The efficiency of graphene-based optoelectronic devices is typically limited by the poor absolute absorption of light. A hybrid structure of monolayer graphene with cylindrical titanium dioxide (TiO2) array and aluminum oxide (Al2O3) spacer layer on aluminum (Al) substrate has been proposed to enhance the absorption for two-dimensional (2D) materials. By combining dielectric array with metal substrate, the structure achieves multiple absorption peaks with near unity absorbance at near-infrared wavelengths due to the resonant effect of dielectric array. Completed monolayer graphene is utilized in the design without any demand of manufacture process to form the periodic patterns. Further analysis indicates that the near-field enhancement induced by surface modes gives rise to the high absorption. This favorable field enhancement and tunability of absorption not only open up new approaches to accelerate the light-graphene interaction, but also show great potential for practical applications in high-performance optoelectronic devices, such as modulators and sensors.

  3. Laser amplification in excited dielectrics

    DEFF Research Database (Denmark)

    Winkler, Thomas; Haahr-Lillevang, Lasse; Sarpe, Cristian

    2018-01-01

    Wide-bandgap dielectrics such as glasses or water are transparent at visible and infrared wavelengths. This changes when they are exposed to ultrashort and highly intense laser pulses. Different interaction mechanisms lead to the appearance of various transient nonlinear optical phenomena. Using...... these, the optical properties of dielectrics can be controlled from the transparent to the metal-like state. Here we expand this range by a yet unexplored mechanism in excited dielectrics: amplification. In a two-colour pump-probe experiment, we show that a 400nm femtosecond laser pulse is coherently...

  4. Reduction of intergranular exchange coupling and grain size for high Ku CoPt-based granular media: Metal-oxide buffer layer and multiple oxide boundary materials

    Directory of Open Access Journals (Sweden)

    Kim Kong Tham

    2018-05-01

    Full Text Available Investigation of magnetic properties and microstructure of granular media with various multiple oxides as the grain boundary material is reported. Saturation magnetization (Ms, uniaxial magnetocrystalline anisotropy (Ku, and magnetic grain diameter (GD of the granular media show linear correlation with volume weighted average for melting point (Tm of each oxides (Tmave. Ku of magnetic grains (Kugrain shows a trade-off relation with GD that it is a big challenge to satisfy both high Kugrain and small GD by only controlling Tmave. To obtain a granular medium with appropriate Kugrain, GD, and low degree of intergranular exchange coupling, the combination of Tmave control of grain boundary material by mixing oxides and employment of a buffer layer are required. Here the degree of intergranular exchange coupling is estimated from the slope of M-H loop at around coercivity (α. By applying this technique, a typical granular medium with Kugrain of 1.0×107 erg/cm3, GD of 5.1 nm, and α of 1.2 is realized.

  5. Estimating fate and transport of multiple contaminants in the vadose zone using a multi-layered soil column and three-phase equilibrium partitioning model

    International Nuclear Information System (INIS)

    Rucker, Gregory G.

    2007-01-01

    Soils at waste sites must be evaluated for the potential of residual soil contamination to leach and migrate to the groundwater beneath the disposal area. If migration to the aquifer occurs, contaminants can travel vast distances and pollute drinking water wells, thus exposing human receptors to harmful levels of toxins and carcinogens. To prevent groundwater contamination, a contaminant fate and transport analysis is necessary to assess the migration potential of residual soil contaminants. This type of migration analysis is usually performed using a vadose zone model to account for complex geotechnical and chemical variables including: decay processes, infiltration rate, soil properties, vadose zone thickness, and chemical behavior. The distinct advantage of using a complex model is that less restrictive, but still protective, soil threshold levels may be determined avoiding the unnecessary and costly remediation of marginally contaminated soils. However, the disadvantage of such modeling is the additional cost for data collection and labor required to apply these models. In order to allay these higher costs and to achieve a less restrictive but still protective clean-up level, a multiple contaminant and multi layered soil column equilibrium partitioning model was developed which is faster, simpler and less expensive to use. (authors)

  6. Enhanced resolution imaging of ultrathin ZnO layers on Ag(111) by multiple hydrogen molecules in a scanning tunneling microscope junction

    Science.gov (United States)

    Liu, Shuyi; Shiotari, Akitoshi; Baugh, Delroy; Wolf, Martin; Kumagai, Takashi

    2018-05-01

    Molecular hydrogen in a scanning tunneling microscope (STM) junction has been found to enhance the lateral spatial resolution of the STM imaging, referred to as scanning tunneling hydrogen microscopy (STHM). Here we report atomic resolution imaging of 2- and 3-monolayer (ML) thick ZnO layers epitaxially grown on Ag(111) using STHM. The enhanced resolution can be obtained at a relatively large tip to surface distance and resolves a more defective structure exhibiting dislocation defects for 3-ML-thick ZnO than for 2 ML. In order to elucidate the enhanced imaging mechanism, the electric and mechanical properties of the hydrogen molecular junction (HMJ) are investigated by a combination of STM and atomic force microscopy. It is found that the HMJ shows multiple kinklike features in the tip to surface distance dependence of the conductance and frequency shift curves, which are absent in a hydrogen-free junction. Based on a simple modeling, we propose that the junction contains several hydrogen molecules and sequential squeezing of the molecules out of the junction results in the kinklike features in the conductance and frequency shift curves. The model also qualitatively reproduces the enhanced resolution image of the ZnO films.

  7. Reduction of intergranular exchange coupling and grain size for high Ku CoPt-based granular media: Metal-oxide buffer layer and multiple oxide boundary materials

    Science.gov (United States)

    Tham, Kim Kong; Kushibiki, Ryosuke; Kamada, Tomonari; Hinata, Shintaro; Saito, Shin

    2018-05-01

    Investigation of magnetic properties and microstructure of granular media with various multiple oxides as the grain boundary material is reported. Saturation magnetization (Ms), uniaxial magnetocrystalline anisotropy (Ku), and magnetic grain diameter (GD) of the granular media show linear correlation with volume weighted average for melting point (Tm) of each oxides (Tmave). Ku of magnetic grains (Kugrain) shows a trade-off relation with GD that it is a big challenge to satisfy both high Kugrain and small GD by only controlling Tmave. To obtain a granular medium with appropriate Kugrain, GD, and low degree of intergranular exchange coupling, the combination of Tmave control of grain boundary material by mixing oxides and employment of a buffer layer are required. Here the degree of intergranular exchange coupling is estimated from the slope of M-H loop at around coercivity (α). By applying this technique, a typical granular medium with Kugrain of 1.0×107 erg/cm3, GD of 5.1 nm, and α of 1.2 is realized.

  8. Hemispherical breathing mode speaker using a dielectric elastomer actuator.

    Science.gov (United States)

    Hosoya, Naoki; Baba, Shun; Maeda, Shingo

    2015-10-01

    Although indoor acoustic characteristics should ideally be assessed by measuring the reverberation time using a point sound source, a regular polyhedron loudspeaker, which has multiple loudspeakers on a chassis, is typically used. However, such a configuration is not a point sound source if the size of the loudspeaker is large relative to the target sound field. This study investigates a small lightweight loudspeaker using a dielectric elastomer actuator vibrating in the breathing mode (the pulsating mode such as the expansion and contraction of a balloon). Acoustic testing with regard to repeatability, sound pressure, vibration mode profiles, and acoustic radiation patterns indicate that dielectric elastomer loudspeakers may be feasible.

  9. Remote Sensing of Salinity: The Dielectric Constant of Sea Water

    Science.gov (United States)

    LeVine, David M.; Lang, R.; Utku, C.; Tarkocin, Y.

    2011-01-01

    Global monitoring of sea surface salinity from space requires an accurate model for the dielectric constant of sea water as a function of salinity and temperature to characterize the emissivity of the surface. Measurements are being made at 1.413 GHz, the center frequency of the Aquarius radiometers, using a resonant cavity and the perturbation method. The cavity is operated in a transmission mode and immersed in a liquid bath to control temperature. Multiple measurements are made at each temperature and salinity. Error budgets indicate a relative accuracy for both real and imaginary parts of the dielectric constant of about 1%.

  10. Atomic layer deposition for graphene device integration

    NARCIS (Netherlands)

    Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

    2017-01-01

    Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

  11. Dielectric inspection of erythrocyte morphology

    International Nuclear Information System (INIS)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-01-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes

  12. Dielectric inspection of erythrocyte morphology

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio [Life Science Laboratory, Materials Laboratories, Sony Corporation, Sony Bioinformatics Center, Tokyo Medical and Dental University, Bunkyo-ku, Tokyo 113-8510 (Japan); Asami, Koji [Laboratory of Molecular Aggregation Analysis, Division of Multidisciplinary Chemistry, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)], E-mail: Yoshihito.Hayashi@jp.sony.com

    2008-05-21

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  13. Silicone-based Dielectric Elastomers

    DEFF Research Database (Denmark)

    Skov, Anne Ladegaard

    Efficient conversion of energy from one form to another (transduction) is an important topic in our daily day, and it is a necessity in moving away from the fossil based society. Dielectric elastomers hold great promise as soft transducers, since they are compliant and light-weight amongst many...... energy efficient solutions are highly sought. These properties allow for interesting products ranging very broadly, e.g. from eye implants over artificial skins over soft robotics to huge wave energy harvesting plants. All these products utilize the inherent softness and compliance of the dielectric...... elastomer transducers. The subject of this thesis is improvement of properties of silicone-based dielectric elastomers with special focus on design guides towards electrically, mechanically, and electromechanically reliable elastomers. Strategies for improving dielectric elastomer performance are widely...

  14. Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

    Science.gov (United States)

    Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

    2016-01-01

    A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

  15. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  16. Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

    Science.gov (United States)

    Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

    1998-03-01

    We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

  17. Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

    Science.gov (United States)

    Guha, Suchismita; Laudari, Amrit

    2017-08-01

    The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

  18. Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

    OpenAIRE

    Boubekeur, Hocine

    2004-01-01

    n memory technology, new materials are being intensively investigated to overcome the integration limits of conventional dielectrics for Giga-bit scale integration, or to be able to produce new types of non-volatile low power memories such as FeRAM. Perovskite type high dielectric constant films for use in Giga-bit scale memories or layered perovskite films for use in non-volatile memories involve materials to semiconductor process flows, which entail a high risk of contamination. The introdu...

  19. High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

    Science.gov (United States)

    Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

    2015-08-01

    1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

  20. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

    2014-02-24

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  1. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  2. A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

    Science.gov (United States)

    Hann, Raiford E.

    1991-01-01

    An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

  3. Semiconductor/dielectric interface engineering and characterization

    Science.gov (United States)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  4. Microwave absorption properties of carbon nanocoils coated with highly controlled magnetic materials by atomic layer deposition.

    Science.gov (United States)

    Wang, Guizhen; Gao, Zhe; Tang, Shiwei; Chen, Chaoqiu; Duan, Feifei; Zhao, Shichao; Lin, Shiwei; Feng, Yuhong; Zhou, Lei; Qin, Yong

    2012-12-21

    In this work, atomic layer deposition is applied to coat carbon nanocoils with magnetic Fe(3)O(4) or Ni. The coatings have a uniform and highly controlled thickness. The coated nanocoils with coaxial multilayer nanostructures exhibit remarkably improved microwave absorption properties compared to the pristine carbon nanocoils. The enhanced absorption ability arises from the efficient complementarity between complex permittivity and permeability, chiral morphology, and multilayer structure of the products. This method can be extended to exploit other composite materials benefiting from its convenient control of the impedance matching and combination of dielectric-magnetic multiple loss mechanisms for microwave absorption applications.

  5. Resonant cavity light-emitting diodes based on dielectric passive cavity structures

    Science.gov (United States)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

    2017-02-01

    A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5

  6. Electrical actuation of dielectric droplets

    International Nuclear Information System (INIS)

    Kumari, N; Bahadur, V; Garimella, S V

    2008-01-01

    Electrical actuation of liquid droplets at the microscale offers promising applications in the fields of microfluidics and lab-on-a-chip devices. Much prior research has targeted the electrical actuation of electrically conducting liquid droplets; however, the actuation of dielectric droplets has remained relatively unexplored, despite the advantages associated with the use of a dielectric droplet. This paper presents modeling and experimental results on the electrical actuation of dielectric droplets between two flat plates. A first-order analytical model, based on the energy-minimization principle, is developed to estimate the electrical actuation force on a dielectric droplet as it moves between two flat plates. Two versions of this analytical model are benchmarked for their suitability and accuracy against a detailed numerical model. The actuation force prediction is then combined with available semi-analytical expressions for predicting the forces opposing droplet motion to develop a model that predicts transient droplet motion under electrical actuation. Electrical actuation of dielectric droplets is experimentally demonstrated by moving transformer oil droplets between two flat plates under the influence of an actuation voltage. Droplet velocities and their dependence on the plate spacing and the applied voltage are experimentally measured and showed reasonable agreement with predictions from the models developed

  7. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  8. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-07-01

    Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  9. Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

    International Nuclear Information System (INIS)

    Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

    1997-01-01

    In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

  10. Measurement of Mars Analog Soil Dielectric Properties for Mars 2020 Radar Science Applications

    Science.gov (United States)

    Decrossas, E.; Bell, D. J.; Jin, C.; Steinfeld, D.; Batres, J.

    2017-12-01

    On multiple solar system missions, radar instruments have been used to probe subsurface geomorphology and to infer chemical composition based on the dielectric signature derived from the reflected signal. One important planetary application is the identification of subsurface water ice at Mars. Low frequency, 15 MHz to 25 MHz, instruments like SHARAD have been used from Mars orbit to investigate subsurface features from 10's to 1000's of meters below the surface of Mars with a vertical resolution of 15m and a horizontal resolution of 300 to 3000 meters. SHARAD has been able to identify vast layers of CO2 and water ice. The ground-penetrating RIMFAX instrument that will ride on the back of the Mars 2020 rover will operate over the 150 MHz to 1200 MHz band and penetrate to a depth of 10 meters with a vertical resolution of 15 to 30 cm. RIMFAX will be able to identify near surface water ice if it exists below the travel path of the Mars 2020 rover. Identification of near surface water ice has science application to current and past Mars hydrologic processes and to the potential for finding remnants of past Mars biologic activity. Identification of near surface water ice also has application to future human missions that would benefit from access to a Mars local water source. Recently, JPL investigators have been pursuing a secondary use of telecom signals to capture bistatic radar signatures from subsurface areas surrounding the rover but away from its travel path. A particularly promising potential source would be the telecom signal from a proposed Mars Helicopter back to the Mars 2020 rover. The Mars 2020 rover will be equipped with up to three telecom subsystems. The Rover Relay telecom subsystem operates at UHF receiving at 435 MHz frequency. Anticipating opportunistic collection of near-surface bistatic radar signatures from telecom signals received at the rover, it is valuable to understand the dielectric properties of the Martian soil in each of these three

  11. Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment

    Science.gov (United States)

    Lin, Yow-Jon; Hung, Cheng-Chun

    2018-02-01

    The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(-OH) x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene-SiO2 interaction, thus increasing the field-effect carrier mobility ( µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.

  12. Investigation of SiO2 thin films dielectric constant using ellipsometry technique

    Directory of Open Access Journals (Sweden)

    P Sangpour

    2014-11-01

    Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.

  13. Luminance mechanisms in green organic light-emitting devices fabricated utilizing tris(8-hydroxyquinoline)aluminum/4,7-diphenyl-1, 10-phenanthroline multiple heterostructures acting as an electron transport layer.

    Science.gov (United States)

    Choo, Dong Chul; Seo, Su Yul; Kim, Tae Whan; Jin, You Young; Seo, Ji Hyun; Kim, Young Kwan

    2010-05-01

    The electrical and the optical properties in green organic light-emitting devices (OLEDs) fabricated utilizing tris(8-hydroxyquinoline)aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen) multiple heterostructures acting as an electron transport layer (ETL) were investigated. The operating voltage of the OLEDs with a multiple heterostructure ETL increased with increasing the number of the Alq3/BPhen heterostructures because more electrons were accumulated at the Alq3/BPhen heterointerfaces. The number of the leakage holes existing in the multiple heterostructure ETL of the OLEDs at a low voltage range slightly increased due to an increase of the internal electric field generated from the accumulated electrons at the Alq3/BPhen heterointerface. The luminance efficiency of the OLEDs with a multiple heterostructure ETL at a high voltage range became stabilized because the increase of the number of the heterointerface decreased the quantity of electrons accumulated at each heterointerface.

  14. Finite element analysis and validation of dielectric elastomer actuators used for active origami

    International Nuclear Information System (INIS)

    McGough, Kevin; Ahmed, Saad; Frecker, Mary; Ounaies, Zoubeida

    2014-01-01

    The field of active origami explores the incorporation of active materials into origami-inspired structures in order to serve as a means of actuation. Active origami-inspired structures capable of folding into complex three-dimensional (3D) shapes have the potential to be lightweight and versatile compared to traditional methods of actuation. This paper details the finite element analysis and experimental validation of unimorph actuators. Actuators are fabricated by adhering layers of electroded dielectric elastomer (3M VHB F9473PC) onto a passive substrate layer (3M Magic Scotch Tape). Finite element analysis of the actuators simulates the electromechanical coupling of the dielectric elastomer under an applied voltage by applying pressures to the surfaces of the dielectric elastomer where the compliant electrode (conductive carbon grease) is present. 3D finite element analysis of the bending actuators shows that applying contact boundary conditions to the electroded region of the active and passive layers provides better agreement to experimental data compared to modeling the entire actuator as continuous. To improve the applicability of dielectric elastomer-based actuators for active origami-inspired structures, folding actuators are developed by taking advantage of localized deformation caused by a passive layer with non-uniform thickness. Two-dimensional analysis of the folding actuators shows that agreement to experimental data diminishes as localized deformation increases. Limitations of using pressures to approximate the electromechanical coupling of the dielectric elastomer under an applied electric field and additional modeling considerations are also discussed. (paper)

  15. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  16. Laser amplification in excited dielectrics

    Science.gov (United States)

    Winkler, Thomas; Haahr-Lillevang, Lasse; Sarpe, Cristian; Zielinski, Bastian; Götte, Nadine; Senftleben, Arne; Balling, Peter; Baumert, Thomas

    2018-01-01

    Wide-bandgap dielectrics such as glasses or water are transparent at visible and infrared wavelengths. This changes when they are exposed to ultrashort and highly intense laser pulses. Different interaction mechanisms lead to the appearance of various transient nonlinear optical phenomena. Using these, the optical properties of dielectrics can be controlled from the transparent to the metal-like state. Here we expand this range by a yet unexplored mechanism in excited dielectrics: amplification. In a two-colour pump-probe experiment, we show that a 400 nm femtosecond laser pulse is coherently amplified inside an excited sapphire sample on a scale of a few micrometres. Simulations strongly support the proposed two-photon stimulated emission process, which is temporally and spatially controllable. Consequently, we expect applications in all fields that demand strongly localized amplification.

  17. GPR Laboratory Tests For Railways Materials Dielectric Properties Assessment

    Directory of Open Access Journals (Sweden)

    Francesca De Chiara

    2014-10-01

    Full Text Available In railways Ground Penetrating Radar (GPR studies, the evaluation of materials dielectric properties is critical as they are sensitive to water content, to petrographic type of aggregates and to fouling condition of the ballast. Under the load traffic, maintenance actions and climatic effects, ballast condition change due to aggregate breakdown and to subgrade soils pumping, mainly on existing lines with no sub ballast layer. The main purpose of this study was to validate, under controlled conditions, the dielectric values of materials used in Portuguese railways, in order to improve the GPR interpretation using commercial software and consequently the management maintenance planning. Different materials were tested and a broad range of in situ conditions were simulated in laboratory, in physical models. GPR tests were performed with five antennas with frequencies between 400 and 1800 MHz. The variation of the dielectric properties was measured, and the range of values that can be obtained for different material condition was defined. Additionally, in situ GPR measurements and test pits were performed for validation of the dielectric constant of clean ballast. The results obtained are analyzed and the main conclusions are presented herein.

  18. Stochastic and deterministic causes of streamer branching in liquid dielectrics

    International Nuclear Information System (INIS)

    Jadidian, Jouya; Zahn, Markus; Lavesson, Nils; Widlund, Ola; Borg, Karl

    2013-01-01

    Streamer branching in liquid dielectrics is driven by stochastic and deterministic factors. The presence of stochastic causes of streamer branching such as inhomogeneities inherited from noisy initial states, impurities, or charge carrier density fluctuations is inevitable in any dielectric. A fully three-dimensional streamer model presented in this paper indicates that deterministic origins of branching are intrinsic attributes of streamers, which in some cases make the branching inevitable depending on shape and velocity of the volume charge at the streamer frontier. Specifically, any given inhomogeneous perturbation can result in streamer branching if the volume charge layer at the original streamer head is relatively thin and slow enough. Furthermore, discrete nature of electrons at the leading edge of an ionization front always guarantees the existence of a non-zero inhomogeneous perturbation ahead of the streamer head propagating even in perfectly homogeneous dielectric. Based on the modeling results for streamers propagating in a liquid dielectric, a gauge on the streamer head geometry is introduced that determines whether the branching occurs under particular inhomogeneous circumstances. Estimated number, diameter, and velocity of the born branches agree qualitatively with experimental images of the streamer branching

  19. Efficient Algorithms for Electrostatic Interactions Including Dielectric Contrasts

    Directory of Open Access Journals (Sweden)

    Christian Holm

    2013-10-01

    Full Text Available Coarse-grained models of soft matter are usually combined with implicit solvent models that take the electrostatic polarizability into account via a dielectric background. In biophysical or nanoscale simulations that include water, this constant can vary greatly within the system. Performing molecular dynamics or other simulations that need to compute exact electrostatic interactions between charges in those systems is computationally demanding. We review here several algorithms developed by us that perform exactly this task. For planar dielectric surfaces in partial periodic boundary conditions, the arising image charges can be either treated with the MMM2D algorithm in a very efficient and accurate way or with the electrostatic layer correction term, which enables the user to use his favorite 3D periodic Coulomb solver. Arbitrarily-shaped interfaces can be dealt with using induced surface charges with the induced charge calculation (ICC* algorithm. Finally, the local electrostatics algorithm, MEMD(Maxwell Equations Molecular Dynamics, even allows one to employ a smoothly varying dielectric constant in the systems. We introduce the concepts of these three algorithms and an extension for the inclusion of boundaries that are to be held fixed at a constant potential (metal conditions. For each method, we present a showcase application to highlight the importance of dielectric interfaces.

  20. PARAMETERS OPTIMIZATION OF METAL-DIELECTRIC NANOSTRUCTURES FOR SENSOR APPLICATIONS

    Directory of Open Access Journals (Sweden)

    V. I. Egorov

    2014-07-01

    Full Text Available We present calculation results of optical properties of silver nanoparticles with dielectric shell in relation to their applications in chemical and biosensors. Absorption cross-section calculation for spherical silver nanoparticles was performed by quasi static dipole approximation. It is shown that dielectric shell thickness equal to 2-3 nm and its refraction index equal to 1,5-1,75 are optimal. Calculation results were compared to experimental data. Experimental investigation of metal-dielectric nanostructures sensitivity to external refraction index was performed. Synthesis of silver nanoparticles with dielectric shell on glass surface was performed by nanosecond laser ablation method in near-surface glass layer at 1,06 μm wavelength (Solar LQ129. Synthesis of silver nanoparticles without a shell on the glass surface with silver ions was performed using thermal treatment in wet atmosphere. Spectrophotometer Cary 500 (Varyan was used for spectral measurements. In case of laser ablation method application, external refraction index changes from 1 (the air to 1,33 (water and plasmon resonance band shift for 6 nm occurs. In case of another method application at the same conditions the registered shift was equal to 13 nm. However, in the latter case the particles can be easily removed from the substrate surface. Obtained results will be useful for developing chemical and biological sensors based on plasmon resonance band shift.

  1. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  2. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    dielectric loss (tan δ) as functions of frequency and temperature. Ion core type ... Since the data on dielectric properties of strontium tartrate trihydrate (STT) do not ... through 'AE' make 15-amp dimmerstat, the rate of heating was maintained ...

  3. The Dielectric Constant of Lubrication Oils

    National Research Council Canada - National Science Library

    Carey, A

    1998-01-01

    The values of the dielectric constant of simple molecules is discussed first, along with the relationship between the dielectric constant and other physical properties such as boiling point, melting...

  4. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

  5. Geometric phase from dielectric matrix

    International Nuclear Information System (INIS)

    Banerjee, D.

    2005-10-01

    The dielectric property of the anisotropic optical medium is found by considering the polarized photon as two component spinor of spherical harmonics. The Geometric Phase of a polarized photon has been evaluated in two ways: the phase two-form of the dielectric matrix through a twist and the Pancharatnam phase (GP) by changing the angular momentum of the incident polarized photon over a closed triangular path on the extended Poincare sphere. The helicity in connection with the spin angular momentum of the chiral photon plays the key role in developing these phase holonomies. (author)

  6. Charge accumulation in lossy dielectrics: a review

    DEFF Research Database (Denmark)

    Rasmussen, Jørgen Knøster; McAllister, Iain Wilson; Crichton, George C

    1999-01-01

    At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries such that the mat......At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries...

  7. Sol-gel-derived mesoporous silica films with low dielectric constants

    Energy Technology Data Exchange (ETDEWEB)

    Seraji, S.; Wu, Yun; Forbess, M.; Limmer, S.J.; Chou, T.; Cao, Guozhong [Washington Univ., Seattle, WA (United States). Dept. of Materials Science and Engineering

    2000-11-16

    Mesoporous silica films with low dielectric constants and possibly closed pores have been achieved with a multiple step sol-gel processing technique. Crack-free films with approximately 50% porosity and 0.9 {mu}m thicknesses were obtained, a tape-test revealing good adhesion between films and substrates or metal electrodes. Dielectric constants remained virtually unchanged after aging at room temperature at 56% humidity over 6 days. (orig.)

  8. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  9. Dielectric Metamaterial Reflector

    Science.gov (United States)

    2017-02-14

    evaporation rates. The design also includes a glass window to enable monitoring of the film growth process. The cell design will allow films to be...we consider a thin SiO2 coating on the InP spheres, as shown in Fig. 1(a), to allow for tuning of the periodicity of the close-packed structure...packed high-index InP spheres with SiO2 coatings. The structure consists of three layers of 360 nm indium-phosphide spheres with 60-nm-thick SiO2

  10. Cellulose Triacetate Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Jow, T. Richard

    1994-01-01

    Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

  11. Dielectric behaviour of (Ba,Sr)TiO3 perovskite borosilicate glass ceramics

    International Nuclear Information System (INIS)

    Yadav, Avadhesh Kumar; Gautam, C.R.

    2013-01-01

    Various perovskite (Ba,Sr)TiO 3 borosilicate glasses were prepared by rapid melt-quench technique in the glass system ((Ba 1-x Sr x ).TiO 3 )-(2SiO 2 .B 2 O 3 )-(K 2 O)-(La 2 O 3 ). On the basis of differential thermal analysis results, glasses were converted into glass ceramic samples by regulated heat treatment schedules. The dielectric behaviour of crystallized barium strontium titanate borosilicate glass ceramic samples shows diffuse phase transition. The study depicts the dielectric behaviour of glass ceramic sample BST5K1L0.2S814. The double relaxation was observed in glass ceramic samples corresponding 80/20% Ba/Sr due to change in crystal structure from orthorhombic to tetragonal and tetragonal to cubic with variation of temperature. The highest value of dielectric constant was found to be 48289 for the glass ceramic sample BST5K1L0.2S814. The high value of dielectric constant attributed to space charge polarization between the glassy phase and perovskite phase. Due to very high value of dielectric constant, such glass ceramics are used for high energy storage devices. La 2 O 3 acts as nucleating agent for crystallization of glass to glass ceramics and enhances the dielectric constant and retarded dielectric loss. Such glass ceramics can be used in high energy storage devices such as barrier layer capacitors, multilayer capacitors etc. (author)

  12. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D.; Seo, Jung-Woo T.; Chen, Kan-Sheng; Marks, Tobin J.; Hersam, Mark C.

    2015-10-14

    Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10–9 A/cm2 at 2 MV/cm and high capacitances of 245 nF/cm2. The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm2 V–1 s–1 at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.

  13. Investigation of some properties of the dielectric particle detector

    Energy Technology Data Exchange (ETDEWEB)

    Gavalyan, V.G.; Gukasyan, S.M.; Kavalov, R.L.; Karapetyan, R.A.; Lorikyan, M.P. (Erevanskij Fizicheskij Inst. (USSR))

    1981-01-01

    Results of investigation into temporary dispersion and amplitude resolution of a dielectric detector (DD) of particles are given. In this detector secondary electrons produced by a particle passing through a dielectric layer are gathered on thin anode filaments strenched inside the dielectric layer. As a working substance of the detector investigated used was CsI having 1.7% relative density of monocrystal, gap between planes of 20 ..mu..m diameter anode filaments and cathode electrodes was approximately equal to 200 ..mu..m, distance between anode filaments was approximately 250 ..mu..m. DD having working area S=5 cm/sup 2/ was placed at a distance of 2 cm from 5 MeV radioactive alpha source of 10/sup 4/ particle/s intensity. Curve of particle detection efficiency for this detector reached plateau at a level of 100% in the range of working voltages from 800 to 1200 V. Coincidence method together with a time-amplitude converter, at inlets of which applied were pulses from DD and a scintillation counter placed under DD, were used to measure temporary dispersion. Data on behaviour of particle registration efficiency depending on time of continuous effect of working and inverse voltages are given. It is found that temporary dispersion of the DD and scintillation counter system is a value of order of 1 ns and amplitude resolution of DD is an order of 100%.

  14. Measurement of valence band structure in arbitrary dielectric films

    International Nuclear Information System (INIS)

    Uhm, Han S.; Choi, Eun H.

    2012-01-01

    A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

  15. arXiv Axion-photon conversion caused by dielectric interfaces: quantum field calculation

    CERN Document Server

    Ioannisian, Ara N.; Millar, Alexander J.; Raffelt, Georg G.

    2017-09-05

    Axion-photon conversion at dielectric interfaces, immersed in a near-homogeneous magnetic field, is the basis for the dielectric haloscope method to search for axion dark matter. In analogy to transition radiation, this process is possible because the photon wave function is modified by the dielectric layers ("Garibian wave function") and is no longer an eigenstate of momentum. A conventional first-order perturbative calculation of the transition probability between a quantized axion state and these distorted photon states provides the microwave production rate. It agrees with previous results based on solving the classical Maxwell equations for the combined system of axions and electromagnetic fields. We argue that in general the average photon production rate is given by our result, independently of the detailed quantum state of the axion field. Moreover, our result provides a new perspective on axion-photon conversion in dielectric haloscopes because the rate is based on an overlap integral between unpertu...

  16. Effective dielectric functions of samples obtained by evaporation of alkali halides

    International Nuclear Information System (INIS)

    Sturm, J.; Grosse, P.; Theiss, W.

    1991-01-01

    This paper investigates the dielectric properties of inhomogeneous samples consisting of small alkali halide particles (NaCl, KBr) on gold-coated substrates. Our reflection measurements in the far infrared can be simulated as a thin layer of the power with an effective dielectric function on a perfectly reflecting substrate. Scanning electron micrographs provide useful information about sample topology. Several mixing formulas (e.g. the Maxwell-Garnett, the Bruggeman- and the Looyenga-formula) lead to effective dielectric functions neglecting the individual arrangement of the particles. The essence of our work is that, in contrast, the general ansatz of the Bergman spectral representation has to be employed in order to take into account topology effects on the dielectric function based on the so-called spectral density g adjustable to the specific situation. (orig.)

  17. Reflectance properties of one-dimensional metal-dielectric ternary photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, G. N., E-mail: gnpandey2009@gmail.com [Department of Physics, Amity Institute of Applied Sciences, AmityUniversity, Noida (U.P.) (India); Kumar, Narendra [Department of Physics (CASH), Modi University of Science and Technology, Lakshmangarh, Sikar, Rajsthan (India); Thapa, Khem B. [Department of Physics, U I E T, ChhatrapatiShahu Ji Maharaj University, Kanpur- (UP) (India); Ojha, S. P. [Department of Physics IIT, Banaras Hindu University (India)

    2016-05-06

    Metallic photonic crystal has a very important application in absorption enhancement in solar cells. It has been found that an ultra-thin metallic layer becomes transparent due to internal scattering of light through the each interface of the dielectric and metal surfaces. The metal has absorption due to their surface plasmon and the plasmon has important parameters for changing optical properties of the metal. We consider ternary metallic-dielectric photonic crystal (MDPC) for having large probabilities to change the optical properties of the MDPC and the photonic crystals may be changed by changing dimensionality, symmetry, lattice parameters, Filling fraction and effective refractive index refractive index contrast. In this present communication, we try to show that the photonic band gap in ternary metal-dielectric photonic crystal can be significantly enlarged when air dielectric constant is considered. All the theoretical analyses are made based on the transfer matrix method together with the Drude model of metal.

  18. Dielectric waveguide amplifiers and lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

  19. Dielectric properties of fly ash

    Indian Academy of Sciences (India)

    Unknown

    India's annual coal production is used in about 72 power- generating plants and ... performance of this material as cracking catalyst was investigated with ... Chemically, the FA was silica to an extent of 55–70%, followed by ... Cu, Pb, Cd, Ag, Mn, Fe, Ti, Na, Mo, S, P, Zn and Cl in different ... two-probe method. The dielectric ...

  20. Dielectric polarization in random media

    International Nuclear Information System (INIS)

    Ramshaw, J.D.

    1984-01-01

    The theory of dielectric polarization in random media is systematically formulated in terms of response kernels. The primary response kernel K(12) governs the mean dielectric response at the point r 1 to the external electric field at the point r 2 in an infinite system. The inverse of K(12) is denoted by L(12);. it is simpler and more fundamental than K(12) itself. Rigorous expressions are obtained for the effective dielectric constant epsilon( in terms of L(12) and K(12). The latter expression involves the Onsger-Kirkwood function (epsilon(-epsilon 0 (2epsilon(+epsilon 0 )/epsilon 0 epsilon( (where epsilon 0 is an arbitrary reference value), and appears to be new to the random medium context. A wide variety of series representations for epsilon( are generated by means of general perturbation expansions for K(12) and L(12). A discussion is given of certain pitfalls in the theory, most of which are related to the fact that the response kernels are long ranged. It is shown how the dielectric behavior of nonpolar molecular fluids may be treated as a special case of the general theory. The present results for epsilon( apply equally well to other effective phenomenological coefficients of the same generic type, such as thermal and electrical conductivity, magnetic susceptibility, and diffusion coefficients

  1. Improved di-electric composition

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, R C

    1915-03-29

    An improved di-electric composition is disclosed composed of pitch or bitumen which is melted, and to which is added, while molten, a quantity of finely ground or pulverized spent shale, the whole being mixed or stirred to make a homogeneous composition, substantially as described.

  2. Extraordinary refraction and self-collimation properties of multilayer metallic-dielectric stratified structures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liwei, E-mail: zlwhpu@hotmail.com [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Chen, Liang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Zhang, Zhengren [School of Science, Chongqing Jiaotong University, Chongqing 400074 (China); Wang, Wusong [Guizhou Aerospace Institute of Measuring and Testing Technology, Guiyang 550009 (China); Zhao, Yuhuan; Song, Kechao; Kang, Chaoyang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China)

    2015-01-15

    The extraordinary refraction with negative or zero refraction angle of the layered metamaterial consisting of alternating dielectric and plasmonic layers is theoretically studied. It is shown that the electromagnetic properties can be tuned by the filling factor, the permittivity of the dielectric layer and the plasma frequency of the metallic layer. At different frequency, the layered structures possess different refraction properties with positive, zero or negative refraction angle. By choosing appropriate parameters, positive-to-zero-to-negative-to positive refraction at the desired frequency can be realized. At the frequency with flat equal frequency contour, self-collimation and slow light properties are also found. Such properties can be used in the performance of negative refraction, subwavelength imaging and information propagation.

  3. Hybrid energy harvesting systems, using piezoelectric elements and dielectric polymers

    Science.gov (United States)

    Cornogolub, Alexandru; Cottinet, Pierre-Jean; Petit, Lionel

    2016-09-01

    Interest in energy harvesting applications has increased a lot during recent years. This is especially true for systems using electroactive materials like dielectric polymers or piezoelectric materials. Unfortunately, these materials despite multiple advantages, present some important drawbacks. For example, many dielectric polymers demonstrated high energy densities; they are cheap, easy to process and can be easily integrated in many different structures. But at the same time, dielectric polymer generators require an external energy supply which could greatly compromise their autonomy. Piezoelectric systems, on the other hand, are completely autonomous and can be easily miniaturized. However, most common piezoelectric materials present a high rigidity and are brittle by nature and therefore their integration could be difficult. This paper investigates the possibility of using hybrid systems combining piezoelectric elements and dielectric polymers for mechanical energy harvesting applications and it is focused mainly on the problem of electrical energy transfer. Our objective is to show that such systems can be interesting and that it is possible to benefit from the advantages of both materials. For this, different configurations were considered and the problem of their optimization was addressed. The experimental work enabled us to prove the concept and identify the main practical limitations.

  4. Effect of combined external uniaxial stress and dc bias on the dielectric property of BaTiO3-based dielectrics in multilayer ceramic capacitor: thermodynamics and experiments

    International Nuclear Information System (INIS)

    Yang Gang; Yue Zhenxing; Sun Tieyu; Gou Huanlin; Li Longtu

    2008-01-01

    The dielectric properties of (Nb, Y)-doped BaTiO 3 in a multilayer ceramic capacitor (MLCC) under combined external uniaxial compressive stress and dc bias field were investigated at room temperature by using a modified Ginsburg-Landau-Devonshire thermodynamic theory and the dielectric measurement. It is found that although dc bias decreases the dielectric properties dominantly, the influence of the external uniaixial compressive stress should not be neglected. When applied along a direction perpendicular to the internal electrode layer in the MLCC, the external uniaixal compressive stress will strengthen the negative effect of dc bias. In contrast, the external uniaxial compressive stress along a direction parallel to the internal electrode layer in the MLCC will increase the dielectric permittivity under dc bias field, i.e. improve the ε-V response of the MLCC. Furthermore, although there is a difference between the calculated permittivity and the measured permittivity, the effects of the combined external uniaxial compressive stress and dc bias field on the dielectric permittivity described through two approaches are in good agreement

  5. Investigation of the dielectric properties of shale

    International Nuclear Information System (INIS)

    Martemyanov, Sergey M.

    2011-01-01

    The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

  6. Structure and mechanical properties of a two-layered material produced by the E-beam surfacing of Ta and Nb on the titanium base after multiple rolling

    Science.gov (United States)

    Bataev, V. A.; Golkovski, M. G.; Samoylenko, V. V.; Ruktuev, A. A.; Polyakov, I. A.; Kuksanov, N. K.

    2018-04-01

    The study has been conducted in line with the current approach to investigation of materials obtained by considerably deep surface alloying of the titanium substrate with Ta, Nb, and Zr. The thickness of the resulting alloyed layer was equal to 2 mm. The coating was formed through weld deposition of a powder with the use of a high-voltage electron beam in the air. It has been lately demonstrated that manufactured such a way alloyed layers possess corrosion resistance which is significantly higher than the resistance of titanium substrates. It has already been shown that such two-layered materials are weldable. The study objective is to investigate the feasibility of rolling for necking the sheets with the Ti-Ta-Nb anticorrosion coating with further fourfold decrease in their thickness. The research is also aimed at investigation of the material properties after rolling. Anticorrosion layers were formed both on CP-titanium and on VT14 (Ti-4Al-3Mo-1 V) durable titanium alloy. The results of chemical composition determination, structure examination, X-ray phase analysis and mechanical properties observations (including bending properties of the alloyed layers) are presented in the paper. The combination of welding, rolling, and bending enables the manufacture of corrosion-resistant vessels and process pipes which are made from the developed material and find technological application.

  7. Stress measurements of planar dielectric elastomer actuators

    International Nuclear Information System (INIS)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert

    2016-01-01

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  8. Stress measurements of planar dielectric elastomer actuators

    Energy Technology Data Exchange (ETDEWEB)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert [Biomaterials Science Center, University of Basel, Gewerbestrasse 14, 4123 Allschwil (Switzerland)

    2016-05-15

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  9. Layered Fault Rocks Below the West Salton Detachment Fault (WSDF), CA Record Multiple Seismogenic? Slip Events and Transfer of Material to a Fault Core

    Science.gov (United States)

    Axen, G. J.; Luther, A. L.; Selverstone, J.; Mozley, P.

    2011-12-01

    Unique layered cataclasites (LCs) occur locally along footwall splays, S of the ~N-dipping, top-E WSDF. They are well exposed in a NW-plunging antiform that folds the LCs and their upper and lower bounding faults. Layers range from very fine-grained granular shear zones 1-2 mm thick and cm's to m's long, to medium- to coarse-grained isotropic granular cataclasite with floating clasts up to 4-5 cm diameter in layers up to ~30 cm thick and 3 to >10 m long. The top, N-flank contact is ~5 m structurally below the main WSDF. Maximum thickness of the LCs is ~5 m on the S flank of the antiform, where the upper 10-50 cm of LCs are composed of relatively planar layers that are subparallel to the upper fault, which locally displays ultracataclasite. Deeper layers are folded into open to isoclinal folds and are faulted. Most shear-sense indicators show N-side-to-E or -SE slip, and include: (1) aligned biotite flakes and mm-scale shear bands that locally define a weak foliation dipping ~ESE, (2) sharp to granular shears, many of which merge up or down into fine-grained layers and, in the base of the overlying granodiorite, (3) primary reidel shears and (4) folded pegmatite dikes. Biotite is unaltered and feldspars are weakly to strongly altered to clays and zeolites. Zeolites also grew in pores between clasts. XRF analyses suggest minimal chemical alteration. The upper fault is sharp and relatively planar, carries granular to foliated cataclasitic granodiorite that grades up over ~2-4 m into punky, microcracked but plutonic-textured rock with much of the feldspar alteration seen in LC clasts. Some upper-plate reidels bend into parallelism with the top fault and bound newly formed LC layers. The basal fault truncates contorted layers and lacks evidence of layers being added there. We infer that the deeper, contorted layers are older and that the LC package grew upward by transfer of cataclasized slices from the overlying granodiorite while folding was ongoing. Particle

  10. Dielectric function of two-phase colloid-polymer nanocomposite.

    Science.gov (United States)

    Mitzscherling, S; Cui, Q; Koopman, W; Bargheer, M

    2015-11-28

    The plasmon resonance of metal nanoparticles determines their optical response in the visible spectral range. Many details such as the electronic properties of gold near the particle surface and the local environment of the particles influence the spectra. We show how the cheap but highly precise fabrication of composite nanolayers by spin-assisted layer-by-layer deposition of polyelectrolytes can be used to investigate the spectral response of gold nanospheres (GNS) and gold nanorods (GNR) in a self-consistent way, using the established Maxwell-Garnett effective medium (MGEM) theory beyond the limit of homogeneous media. We show that the dielectric function of gold nanoparticles differs from the bulk value and experimentally characterize the shape and the surrounding of the particles thoroughly by SEM, AFM and ellipsometry. Averaging the dielectric functions of the layered surrounding by an appropriate weighting with the electric field intensity yields excellent agreement for the spectra of several nanoparticles and nanorods with various cover-layer thicknesses.

  11. Two-phase mixed media dielectric with macro dielectric beads for enhancing resistivity and breakdown strength

    Science.gov (United States)

    Falabella, Steven; Meyer, Glenn A; Tang, Vincent; Guethlein, Gary

    2014-06-10

    A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid.

  12. Selective layer disordering in III-nitrides with a capping layer

    Science.gov (United States)

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  13. Stable Boundary Layer Issues

    OpenAIRE

    Steeneveld, G.J.

    2012-01-01

    Understanding and prediction of the stable atmospheric boundary layer is a challenging task. Many physical processes are relevant in the stable boundary layer, i.e. turbulence, radiation, land surface coupling, orographic turbulent and gravity wave drag, and land surface heterogeneity. The development of robust stable boundary layer parameterizations for use in NWP and climate models is hampered by the multiplicity of processes and their unknown interactions. As a result, these models suffer ...

  14. Dielectric coatings on metal substrates

    International Nuclear Information System (INIS)

    Glaros, S.S.; Baker, P.; Milam, D.

    1976-01-01

    Large aperture, beryllium substrate-based mirrors have been used to focus high intensity pulsed laser beams. Finished surfaces have high reflectivity, low wavefront distortion, and high laser damage thresholds. This paper describes the development of a series of metallic coatings, surface finishing techniques, and dielectric overcoatings to meet specified performance requirements. Beryllium substrates were coated with copper, diamond-machined to within 5 micro-inches to final contour, nickel plated, and abrasively figured to final contour. Bond strengths for several bonding processes are presented. Dielectric overcoatings were deposited on finished multimetallic substrates to increase both reflectivity and the damage thresholds. Coatings were deposited using both high and low temperature processes which induce varying stresses in the finished coating substrate system. Data are presented to show the evolution of wavefront distortion, reflectivity, and damage thresholds throughout the many steps involved in fabrication

  15. Virtual ellipsometry on layered micro-facet surfaces.

    Science.gov (United States)

    Wang, Chi; Wilkie, Alexander; Harcuba, Petr; Novosad, Lukas

    2017-09-18

    Microfacet-based BRDF models are a common tool to describe light scattering from glossy surfaces. Apart from their wide-ranging applications in optics, such models also play a significant role in computer graphics for photorealistic rendering purposes. In this paper, we mainly investigate the computer graphics aspect of this technology, and present a polarisation-aware brute force simulation of light interaction with both single and multiple layered micro-facet surfaces. Such surface models are commonly used in computer graphics, but the resulting BRDF is ultimately often only approximated. Recently, there has been work to try to make these approximations more accurate, and to better understand the behaviour of existing analytical models. However, these brute force verification attempts still emitted the polarisation state of light and, as we found out, this renders them prone to mis-estimating the shape of the resulting BRDF lobe for some particular material types, such as smooth layered dielectric surfaces. For these materials, non-polarising computations can mis-estimate some areas of the resulting BRDF shape by up to 23%. But we also identified some other material types, such as dielectric layers over rough conductors, for which the difference turned out to be almost negligible. The main contribution of our work is to clearly demonstrate that the effect of polarisation is important for accurate simulation of certain material types, and that there are also other common materials for which it can apparently be ignored. As this required a BRDF simulator that we could rely on, a secondary contribution is that we went to considerable lengths to validate our software. We compare it against a state-of-art model from graphics, a library from optics, and also against ellipsometric measurements of real surface samples.

  16. Asymmetric Dielectric Elastomer Composite Material

    Science.gov (United States)

    Stewart, Brian K. (Inventor)

    2014-01-01

    Embodiments of the invention provide a dielectric elastomer composite material comprising a plurality of elastomer-coated electrodes arranged in an assembly. Embodiments of the invention provide improved force output over prior DEs by producing thinner spacing between electrode surfaces. This is accomplished by coating electrodes directly with uncured elastomer in liquid form and then assembling a finished component (which may be termed an actuator) from coated electrode components.

  17. Coherent multimoded dielectric wakefield accelerators

    International Nuclear Information System (INIS)

    Power, J.

    1998-01-01

    There has recently been a study of the potential uses of multimode dielectric structures for wakefield acceleration [1]. This technique is based on adjusting the wakefield modes of the structure to constructively interfere at certain delays with respect to the drive bunch, thus providing an accelerating gradient enhancement over single mode devices. In this report we examine and attempt to clarify the issues raised by this work in the light of the present state of the art in wakefield acceleration

  18. Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

    Science.gov (United States)

    Shi, Hualiang

    Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma

  19. Energy storage in ceramic dielectrics

    International Nuclear Information System (INIS)

    Love, G.R.

    1990-01-01

    Historically, multilayer ceramic capacitors (MLC's) have not been considered for energy storage applications for two primary reasons. First, physically large ceramic capacitors were very expensive and, second, total energy density obtainable was not nearly so high as in electrolytic capacitor types. More recently, the fabrication technology for MLC's has improved significantly, permitting both significantly higher energy density and significantly lower costs. Simultaneously, in many applications, total energy storage has become smaller, and the secondary requirements of very low effective series resistance and effective series inductance (which, together, determine how efficiently the energy may be stored and recovered) have become more important. It is therefore desirable to reexamine energy storage in ceramics for contemporary commercial and near-commercial dielectrics. Stored energy is proportional to voltage squared only in the case of paraelectric insulators, because only they have capacitance that is independent of bias voltage. High dielectric constant materials, however, are ferroics (that is ferroelectric and/or antiferroelectric) and display significant variation of effective dielectric constant with bias voltage

  20. Dielectric-filled radiofrequency linacs

    Energy Technology Data Exchange (ETDEWEB)

    Faehl, R J; Keinigs, R K; Pogue, E W [Los Alamos National Lab., NM (United States)

    1997-12-31

    High current, high brightness electron beam accelerators promise to open up dramatic new applications. Linear induction accelerators are currently viewed as the appropriate technology for these applications. A concept by Humphries and Hwang may permit radiofrequency accelerators to fulfill the same functions with greater simplicity and enhanced flexibility. This concept involves the replacement of vacuum rf cavities with dielectric filled ones. Simple analysis indicates that the resonant frequencies are reduced by a factor of ({epsilon}{sub 0}/{epsilon}){sup 1/2} while the stored energy is increased by {epsilon}/{epsilon}{sub 0}. For a high dielectric constant like water, this factor can approach 80. A series of numerical calculations of simple pill-box cavities was performed. Eigenfunctions and resonant frequencies for a full system configuration, including dielectric material, vacuum beamline, and a ceramic window separating the two have been computed. These calculations are compared with the results of a small experimental cavity which have been constructed and operated. Low power tests show excellent agreement. (author). 4 figs., 8 refs.

  1. Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

    Science.gov (United States)

    Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

    2018-04-01

    It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

  2. Effect of quantum confinement on the dielectric function of PbSe

    NARCIS (Netherlands)

    Hens, Z.; Vanmaekelbergh, D.; Kooij, Ernst S.; Wormeester, Herbert; Allan, G.; Delerue, C.

    2004-01-01

    Monolayers of lead selenide nanocrystals of a few nanometers in height have been made by electrodeposition on a Au(111) substrate. These layers show a thickness-dependent dielectric function, which was determined using spectroscopic ellipsometry. The experimental results are compared with electronic

  3. Analysis of transmittance properties in 1D hybrid dielectric photonic crystal containing superconducting thin films

    Science.gov (United States)

    Soltani, Osswa; Zaghdoudi, Jihene; Kanzari, Mounir

    2018-06-01

    By means of two fluid model and transfer matrix method (TMM), we investigate theoretically the transmittance properties of a defective hybrid dielectric-dielectric photonic crystal that contains a superconducting material as a defect layer. The considered hybrid photonic structure is: H(LH) 7(HLSLH) P H(LH) 7 , where H is the high refractive index dielectric, L is the low refractive index dielectric, S is the superconducting material and P is the repetitive number. The results show that the variation of the number and the positions of the transmissions modes depend strongly on the repetitive number P, the temperature T and the thickness of the layer S. An improvement of the spectral response is obtained with the exponential gradation of layer thicknesses dj =d0 + βejα , where d0 is the initial thickness of the layer j, α and β are two particular constants for each material. In addition, the effect of the incident angle for both transverse electric (TE) and transverse magnetic (TM) polarizations on the transmittance spectrum is discussed. As a result, we propose a tunable narrow stop-band polychromatic filter that covers the visible wavelength.

  4. Analysis of Buried Dielectric Objects Using Higher-Order MoM for Volume Integral Equations

    DEFF Research Database (Denmark)

    Kim, Oleksiy S.; Meincke, Peter; Breinbjerg, Olav

    2004-01-01

    A higher-order method of moments (MoM) is applied to solve a volume integral equation for dielectric objects in layered media. In comparison to low-order methods, the higher-order MoM, which is based on higher-order hierarchical Legendre vector basis functions and curvilinear hexahedral elements,...

  5. Design and Development of an Array of Dielectric Suspended Membranes for Microhotplate Applications

    Directory of Open Access Journals (Sweden)

    Mahanth Prasad

    2014-05-01

    Full Text Available The paper presents the design, fabrication and characterization of an array of suspended dielectric suspended membranes for microhotplate applications. A single cell membrane (100 µm ´ 100 µm made of two different dielectric layers: SiO2 and Si3N4 separately, was designed and simulated using ANSYS 10.0. The simulation of stress generated in different dielectric membranes as a function of temperature is reported. The thickness of both layers was taken as 0.3 µm. The membranes of both SiO2 and Si3N4 dielectrics were fabricated on silicon substrate by bulk micromachining technique using TMAH solution. The buckling of the beam and breakage of membranes made of high-stress Si3N4 film are reported. The simulated results were verified by experiments. The membrane made of SiO2 layer was found to be more suitable in comparison to high-stress Si3N4 layer for microhotplate applications. The present approach provides high yield at low cost for fabrication of microhotplates for gas sensing applications.

  6. Terahertz-frequency dielectric response of liquids

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Møller, Uffe; Cooke, David

    The dielectric response of liquids spans many decades in frequency. The dielectric response of a polar liquid is typically determined by relaxational dynamics of the dipolar moments of the liquid. In contrast, the dielectric response of a nonpolar liquid is determined by much weaker collision......-induced dipole moments. In the polar liquid water the fastest relaxational dynamics is found at terahertz frequencies, just below the first intermolecular vibrational and librational modes. In this presentation we will discuss optical terahertz spectroscopic techniques for measurement of the full dielectric...... function of liquids at terahertz frequencies. We will review the current understanding of the high-frequency dielectric spectrum of water, and discuss the relation between the dielectric spectrum and the thermodynamic properties of certain aqueous solutions....

  7. High-κ gate dielectrics: Current status and materials properties considerations

    Science.gov (United States)

    Wilk, G. D.; Wallace, R. M.; Anthony, J. M.

    2001-05-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  8. Frequency and temperature dependent dielectric properties of TiO2-V2O5 nanocomposites

    Science.gov (United States)

    Ray, Apurba; Roy, Atanu; De, Sayan; Chatterjee, Souvik; Das, Sachindranath

    2018-03-01

    In this manuscript, we have reported the crystal structure, dielectric response, and transport phenomenon of TiO2-V2O5 nanocomposites. The nanocomposites were synthesized using a sol-gel technique having different molar ratios of Ti:V (10:10, 10:15, and 10:20). The phase composition and the morphology have been studied using X-ray diffraction and field emission scanning electron microscope, respectively. The impedance spectroscopy studies of the three samples over a wide range of temperature (50 K-300 K) have been extensively described using the internal barrier layer capacitor model. It is based on the contribution of domain and domain boundary, relaxations of the materials, which are the main crucial factors for the enhancement of the dielectric response. The frequency dependent ac conductivity of the ceramics strongly obeys the well-known Jonscher's power law, and it has been clearly explained using the theory of jump relaxation model. The temperature dependent bulk conductivity is fairly recognized to the variable-range hopping of localized polarons. The co-existence of mixed valence state of Ti ions (Ti3+ and Ti4+) in the sample significantly contributes to the change of dielectric property. The overall study of dielectric response explains that the dielectric constant and the dielectric loss are strongly dependent on temperature and frequency and decrease with an increase of frequency as well as temperature.

  9. Resonant photon tunneling via surface plasmon polaritons through one-dimensional metal-dielectric metamaterials

    OpenAIRE

    Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B.; Fujii, Minoru; Hayashi, Shinji

    2008-01-01

    We report resonant photon tunneling (RPT) through onedimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that t...

  10. Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

    Directory of Open Access Journals (Sweden)

    Medeiros Jamilson Pinto

    1998-01-01

    Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

  11. Influence of ion transport on discharge propagation of nanosecond dielectric barrier discharge plasma actuator

    Science.gov (United States)

    Hua, Weizhuo; Koji, Fukagata

    2017-11-01

    A numerical study has been conducted to understand the streamer formation and propagation of nanosecond pulsed surface dielectric barrier discharge of positive polarity. First we compared the result of different grid configuration to investigate the influence of x and y direction grid spacing on the streamer propagation. The streamer propagation is sensitive to y grid spacing especially at the dielectric surface. The streamer propagation velocity can reach 0.2 cm/ns when the voltage magnitude is 12 kV. A narrow gap was found between the streamer and dielectric barrier, where the plasma density is several orders of magnitude smaller than the streamer region. Analyses on the ion transport in the gap and streamer regions show the different ion transport mechanisms in the two different region. In the gap region, the diffusion of electron toward the dielectric layer decreases the seed electron in the beginning of voltage pulse, resulting that ionization avalanche does not occur. The streamer region is not significantly affected by the diffusion flux toward the dielectric layer, so that ionization avalanche takes place and leads to dramatic increase of plasma density.

  12. Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Janzén, E.; Henry, A.; Rooyen, I.J. van

    2014-01-01

    A layer-on-substrate model is used to obtain the infrared reflectance for 3C–SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C–SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.

  13. Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Janzén, E.; Henry, A. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Rooyen, I.J. van [Fuel Performance and Design Department, Idaho National Laboratory, PO Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2014-04-15

    A layer-on-substrate model is used to obtain the infrared reflectance for 3C–SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C–SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.

  14. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

  15. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  16. High temperature measurements of the microwave dielectric properties of ceramics

    International Nuclear Information System (INIS)

    Baeraky, T.A.

    1999-06-01

    Equipment has been developed for the measurement of dielectric properties at high temperature from 25 to 1700 deg. C in the microwave frequency range 614.97 to 3620.66 MHz using the cavity perturbation technique, to measure the permittivity of a range of ceramic materials. The complex permittivities of the standard materials, water and methanol, were measured at low temperature and compared with the other published data. A statistical analysis was made for the permittivity measurements of water and methanol using sample holders of different diameter. Also the measurements of these materials were used to compare the simple perturbation equation with its modifications and alternation correction methods for sample shape and the holes at the two endplates of the cavity. The dielectric properties of solid materials were investigated from the permittivity measurements on powder materials, shown in table 4.7, using the dielectric mixture equations. Two kinds of ceramics, oxide and nitrides, were selected for the high temperature dielectric measurements in microwave frequency ranges. Pure zirconia, yttria-stabilised zirconia, and Magnesia-stabilised zirconia are the oxide ceramics while aluminium nitride and silicon nitride are the nitride ceramics. A phase transformation from monoclinic to tetragonal was observed in pure zirconia in terms of the complex permittivity measurements, and the conduction mechanism in three regions of temperature was suggested to be ionic in the first region and a mixture of ionic and electronic in the second. The phase transition disappeared with yttria-stabilised zirconia but it was observed with magnesia-stabilised zirconia. Yttria doped zirconia was fully stabilised while magnesia stabilised was partially stabilised zirconia. The dielectric property measurements of aluminium nitride indicated that there is a transition from AIN to AlON, which suggested that the external layer of the AIN which was exposed to the air, contains alumina. It was

  17. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  18. Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

    Science.gov (United States)

    Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

    2018-06-01

    Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

  19. A propagator matrix method for the Rayleigh-Taylor instability of multiple layers: a case study on crustal delamination in the early Earth

    Science.gov (United States)

    Mondal, Puskar; Korenaga, Jun

    2018-03-01

    The dispersion relation of the Rayleigh-Taylor instability, a gravitational instability associated with unstable density stratification, is of profound importance in various geophysical contexts. When more than two layers are involved, a semi-analytical technique based on the biharmonic formulation of Stokes flow has been extensively used to obtain such dispersion relation. However, this technique may become cumbersome when applied to lithospheric dynamics, where a number of layers are necessary to represent the continuous variation of viscosity over many orders of magnitude. Here, we present an alternative and more efficient method based on the propagator matrix formulation of Stokes flow. With this approach, the original instability problem is reduced to a compact eigenvalue equation whose size is solely determined by the number of primary density contrasts. We apply this new technique to the stability of the early crust, and combined with the Monte Carlo sensitivity analysis, we derive an empirical formula to compute the growth rate of the Rayleigh-Taylor instability for this particular geophysical setting. Our analysis indicates that the likelihood of crustal delamination hinges critically on the effective viscosity of eclogite.

  20. Synchrotron-based multiple-beam FTIR chemical imaging of a multi-layered polymer in transmission and reflection: towards cultural heritage applications

    Science.gov (United States)

    Unger, Miriam; Mattson, Eric; Schmidt Patterson, Catherine; Alavi, Zahrasadet; Carson, David; Hirschmugl, Carol J.

    2013-04-01

    IRENI (infrared environmental imaging) is a recently commissioned Fourier transform infrared (FTIR) chemical imaging beamline at the Synchrotron Radiation Center in Madison, WI, USA. This novel beamline extracts 320 mrad of radiation, horizontally, from one bending magnet. The optical transport separates and recombines the beam into 12 parallel collimated beams to illuminate a commercial FTIR microspectrometer (Bruker Hyperion 3000) equipped with a focal plane array detector where single pixels in the detector image a projected sample area of either 0.54×0.54 μm2 or 2×2 μm2, depending in the measurement geometry. The 12 beams are partially overlapped and defocused, similar to wide-field microscopy, homogeneously illuminating a relatively large sample area compared to single-beam arrangements. Both transmission and reflection geometries are used to examine a model cross section from a layered polymer material. The compromises for sample preparation and measurement strategies are discussed, and the chemical composition and spatial definition of the layers are distinguished in chemical images generated from data sets. Deconvolution methods that may allow more detailed data analysis are also discussed.