WorldWideScience

Sample records for multilayer electronic devices

  1. SU-G-BRA-06: Quantification of Tracking Performance of a Multi-Layer Electronic Portal Imaging Device

    Hu, Y; Rottmann, J; Myronakis, M; Berbeco, R [Department of Radiation Oncology, Brigham and Women’s Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, MA (United States)

    2016-06-15

    Purpose: The purpose of this study was to quantify the improvement in tumor tracking, with and without fiducial markers, afforded by employing a multi-layer (MLI) electronic portal imaging device (EPID) over the current state-of-the-art, single-layer, digital megavolt imager (DMI) architecture. Methods: An ideal observer signal-to-noise ratio (d’) approach was used to quantify the ability of an MLI EPID and a current, state-of-the-art DMI EPID to track lung tumors from the treatment beam’s-eye-view. Using each detector modulation transfer function (MTF) and noise power spectrum (NPS) as inputs, a detection task was employed with object functions describing simple three-dimensional Cartesian shapes (spheres and cylinders). Marker-less tumor tracking algorithms often use texture discrimination to differentiate benign and malignant tissue. The performance of such algorithms is simulated by employing a discrimination task for the ideal observer, which measures the ability of a system to differentiate two image quantities. These were defined as the measured textures for benign and malignant lung tissue. Results: The NNPS of the MLI ∼25% of that of the DMI at the expense of decreased MTF at intermediate frequencies (0.25≤

  2. Multilayered analog optical differentiating device: performance analysis on structural parameters.

    Wu, Wenhui; Jiang, Wei; Yang, Jiang; Gong, Shaoxiang; Ma, Yungui

    2017-12-15

    Analogy optical devices (AODs) able to do mathematical computations have recently gained strong research interest for their potential applications as accelerating hardware in traditional electronic computers. The performance of these wavefront-processing devices is primarily decided by the accuracy of the angular spectral engineering. In this Letter, we show that the multilayer technique could be a promising method to flexibly design AODs according to the input wavefront conditions. As examples, various Si-SiO 2 -based multilayer films are designed that can precisely perform the second-order differentiation for the input wavefronts of different Fourier spectrum widths. The minimum number and thickness uncertainty of sublayers for the device performance are discussed. A technique by rescaling the Fourier spectrum intensity has been proposed in order to further improve the practical feasibility. These results are thought to be instrumental for the development of AODs.

  3. Practical microwave electron devices

    Meurant, Gerard

    2013-01-01

    Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

  4. Desktop aligner for fabrication of multilayer microfluidic devices.

    Li, Xiang; Yu, Zeta Tak For; Geraldo, Dalton; Weng, Shinuo; Alve, Nitesh; Dun, Wu; Kini, Akshay; Patel, Karan; Shu, Roberto; Zhang, Feng; Li, Gang; Jin, Qinghui; Fu, Jianping

    2015-07-01

    Multilayer assembly is a commonly used technique to construct multilayer polydimethylsiloxane (PDMS)-based microfluidic devices with complex 3D architecture and connectivity for large-scale microfluidic integration. Accurate alignment of structure features on different PDMS layers before their permanent bonding is critical in determining the yield and quality of assembled multilayer microfluidic devices. Herein, we report a custom-built desktop aligner capable of both local and global alignments of PDMS layers covering a broad size range. Two digital microscopes were incorporated into the aligner design to allow accurate global alignment of PDMS structures up to 4 in. in diameter. Both local and global alignment accuracies of the desktop aligner were determined to be about 20 μm cm(-1). To demonstrate its utility for fabrication of integrated multilayer PDMS microfluidic devices, we applied the desktop aligner to achieve accurate alignment of different functional PDMS layers in multilayer microfluidics including an organs-on-chips device as well as a microfluidic device integrated with vertical passages connecting channels located in different PDMS layers. Owing to its convenient operation, high accuracy, low cost, light weight, and portability, the desktop aligner is useful for microfluidic researchers to achieve rapid and accurate alignment for generating multilayer PDMS microfluidic devices.

  5. Implantable electronic medical devices

    Fitzpatrick, Dennis

    2014-01-01

    Implantable Electronic Medical Devices provides a thorough review of the application of implantable devices, illustrating the techniques currently being used together with overviews of the latest commercially available medical devices. This book provides an overview of the design of medical devices and is a reference on existing medical devices. The book groups devices with similar functionality into distinct chapters, looking at the latest design ideas and techniques in each area, including retinal implants, glucose biosensors, cochlear implants, pacemakers, electrical stimulation t

  6. Electron density profile in multilayer systems

    Toekesi, K.

    2004-01-01

    Complete text of publication follows. Electron energy loss spectroscopy (EELS) has been used extensively to study the multilayer systems, where the thickness of layers are in the nanometer range. These studies has received considerable attention because of its technological interest, for example in the nanotechnology. On the most fundamental level, its importance is derived from the basic physics that is involved. One key quantities of interest is the response of a many-body system to an external perturbation: How act and how modify the interface between the solid-solid or solid-vacuum the excitations in the solid and in the vicinity of the interfaces. In this work, as a starting point of such investigations we calculated the electron density profile for multilayer systems. Our approach employs the time-dependent density functional theory (TDDFT), that is, the solution of a time-dependent Schroedinger equation in which the potential and forces are determined selfconsistently from the dynamics governed by the Schroedinger equation. We treat the problem in TDDFT at the level of the local-density approximation (LDA). Later, the comparison of experimentally obtained loss functions and the theory, based on our TDDFT calculations can provide deeper understanding of surface physics. We performed the calculations for half-infinite samples characterized by r s =1.642 and r s =1.997. We also performed the calculations for double layer systems. The substrate was characterized by r s =1.997 and the coverage by r s =1.642. Fig. 1. shows the obtained electron density profile in LDA approximation. Because of the sharp cutoff of electronic wave vectors at the Fermi surface, the densities in the interior exhibit slowly decaying Friedel oscillations. To highlight the Friedel oscillation we enlarged the electron density profile in Fig. 1a. and Fig. 1b. The work was supported by the Hungarian Scientific Research Found: OTKA No. T038016, the grant 'Bolyai' from the Hungarian Academy of

  7. Surface wave photonic device based on porous silicon multilayers

    Guillermain, E.; Lysenko, V.; Benyattou, T.

    2006-01-01

    Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

  8. Electronic devices and circuits

    Pridham, Gordon John

    1972-01-01

    Electronic Devices and Circuits, Volume 3 provides a comprehensive account on electronic devices and circuits and includes introductory network theory and physics. The physics of semiconductor devices is described, along with field effect transistors, small-signal equivalent circuits of bipolar transistors, and integrated circuits. Linear and non-linear circuits as well as logic circuits are also considered. This volume is comprised of 12 chapters and begins with an analysis of the use of Laplace transforms for analysis of filter networks, followed by a discussion on the physical properties of

  9. Processing and characterization of multilayers for energy device fabrication (invited)

    Kaiser, Andreas; Kiebach, Wolff-Ragnar; Gurauskis, Jonas

    SOFC and tubular OTM, we present selected challenges in ceramic processing such asymmetric multilayer structures. By optimizing different steps in the ceramic processing, we improved the mechanical properties and gas permeability of porous supports and the (electrochemical) performance of electrodes......The performance of asymmetric multilayer structures in solid oxide fuel cells (SOFC)/solid oxide electrolysis cells (SOEC), tubular oxygen transport membranes (OTM) and similar high temperature energy devices is often determined by the ceramic fabrication (for given materials and design). A good...... understanding and control of different processing steps (from powder/materials selection, through shaping and sintering) is of crucial importance to achieve a defect-free multilayer microstructure with the desired properties and performance. Based on the experiences at DTU Energy with the fabrication of planar...

  10. Electronic devices and circuits

    Pridham, Gordon John

    1968-01-01

    Electronic Devices and Circuits, Volume 1 deals with the design and applications of electronic devices and circuits such as passive components, diodes, triodes and transistors, rectification and power supplies, amplifying circuits, electronic instruments, and oscillators. These topics are supported with introductory network theory and physics. This volume is comprised of nine chapters and begins by explaining the operation of resistive, inductive, and capacitive elements in direct and alternating current circuits. The theory for some of the expressions quoted in later chapters is presented. Th

  11. Electrons and Phonons in Semiconductor Multilayers

    Ridley, B. K.

    1996-11-01

    This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

  12. Nondestructive diagnosis of multilayer electronic plates

    Matvienko, A.N.; Savin, D.O.; Yas'ko, A.V.

    1992-01-01

    Methods of non-destructive tomographic investigation into multilayer printed plates using x radiation are described. Mathematic problem setting is given, experimental facility and methods for source data ecquisition are described. A special attention is paid to the consideration of the main factors differing the actual problem setting from the idealized one. Methods for accounting and correction of these factors are described. The efficiency of the approach proposed is demonstrated using the actual problems of reducing separate layers of multilayer printed plate metallization. The method developed is useful when exersizing control over multilayer printed plate production

  13. Electronic security device

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  14. Electronic security device

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-01-01

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs

  15. Polymerization of vinyl stearate multilayers by electron beam irradiation

    Nishii, Masanobu; Hatada, Motoyoshi

    1975-01-01

    Studies on the radiation-induced polymerization of vinyl stearate (VST) multilayers were carried out. The VST multilayers built-up on an aluminum plated glass plate by Langmuir-Blodgett technique were irradiated with electron beams from a Van de Graaff electron accelerator in nitrogen atmosphere. The structure of the multilayers and the effects of irradiation were investigated by X-ray diffractometry, contact angle measurement, multireflection infrared spectroscopy, and scanning electron microscopy. The VST multilayers became insoluble to methanol by the irradiation, and the multi-reflection infrared spectrum of the VST multilayers turned into that of poly (VST) with increasing dosage. The polymerization proceeded during the irradiation at the temperature range between -10 0 and 10 0 C, and the conversion attained to 90% within 2.5 minutes (total dose, 5.6 Mrads). The multilayers irradiated above 13 Mrads turned into the polymer film insoluble to benzene, indicating that the polymer chains were cross-linked by the irradiation. Stearic acid which was formed by the irradiation of VST at nitrogen-water interface as a hydrolysis product was not detected in this system. (auth.)

  16. Electron with arbitrary pseudo-spins in multilayer graphene

    Prarokijjak Worasak; Soodchomshom Bumned

    2015-01-01

    Using the low-energy effective Hamiltonian of the ABC-stacked multilayer graphene, the pseudo-spin coupling to real orbital angular momentum of electrons in multilayer graphene is investigated. We show that the electron wave function in N-layer graphene mimics the behavior of a particle with a spin of N × (ħ/2), where N = {1, 2, 3,…}. It is said that for N > 1 the low-energy effective Hamiltonian for ABC-stacked graphene cannot be used to describe pseudo-spin-1/2 particles. The wave function of electrons in multilayer graphene may behave like fermionic (or bosonic) particle for N being odd (or even). In this paper, we propose a theory of graphene serving as a host material of electrons with arbitrary pseudo-spins tunable by changing the number of graphene layers. (paper)

  17. Electron with arbitrary pseudo-spins in multilayer graphene

    Worasak Prarokijjak; Bumned Soodchomshom

    2015-01-01

    Using the low-energy effective Hamiltonian of the ABC-stacked multilayer graphene, the pseudo-spin coupling to real orbital angular momentum of electrons in multilayer graphene is investigated. We show that the electron wave function in N-layer graphene mimics the behavior of a particle with a spin of N × (}/2), where N={1, 2, 3, . . .}. It is said that for N>1 the low-energy effective Hamiltonian for ABC-stacked graphene cannot be used to describe pseudo-spin-1/2 particles. The wave function of electrons in multilayer graphene may behave like fermionic (or bosonic) particle for N being odd (or even). In this paper, we propose a theory of graphene serving as a host material of electrons with arbitrary pseudo-spins tunable by changing the number of graphene layers.

  18. Organic nonvolatile memory devices with charge trapping multilayer graphene film

    Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

    2012-01-01

    We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

  19. The effect of illumination and electrode adjustment on the carrier behavior in special multilayer devices

    Deng, Yanhong; Ou, Qingdong; Wang, Jinjiang; Zhang, Dengyu; Chen, Liezun; Li, Yanqing

    2017-08-01

    Intermediate connectors play an important role in semiconductor devices, especially in tandem devices. In this paper, four types of different intermediate connectors (e.g. Mg:Alq3/MoO3, MoO3, Mg:Alq3, and none) and two kinds of modified electrode materials (LiF and MoO3) integrated into the special multilayer devices are proposed, with the aim of studying the impact of light illumination and electrode adjustment on the carrier behavior of intermediate connectors through the current density-voltage characteristics, interfacial electronic structures, and capacitance-voltage characteristics. The results show that the illumination enhances the charge generation and separation in intermediate connectors, and further electrode interface modifications enhance the functionality of intermediate connectors. In addition, the device with an efficient intermediate connector structure shows a photoelectric effect, which paves the way for organic photovoltaic devices to realize optical-electrical integration transformation.

  20. Multilayer electronic component systems and methods of manufacture

    Thompson, Dane (Inventor); Wang, Guoan (Inventor); Kingsley, Nickolas D. (Inventor); Papapolymerou, Ioannis (Inventor); Tentzeris, Emmanouil M. (Inventor); Bairavasubramanian, Ramanan (Inventor); DeJean, Gerald (Inventor); Li, RongLin (Inventor)

    2010-01-01

    Multilayer electronic component systems and methods of manufacture are provided. In this regard, an exemplary system comprises a first layer of liquid crystal polymer (LCP), first electronic components supported by the first layer, and a second layer of LCP. The first layer is attached to the second layer by thermal bonds. Additionally, at least a portion of the first electronic components are located between the first layer and the second layer.

  1. Electron beam irradiating device

    Shinohara, K

    1969-12-20

    The efficiency of an electron beam irradiating device is heightened by improving the irradiation atmosphere and the method of cooling the irradiation window. An irradiation chamber one side of which incorporates the irradiation windows provided at the lower end of the scanner is surrounded by a suitable cooling system such as a coolant piping network so as to cool the interior of the chamber which is provided with circulating means at each corner to circulate and thus cool an inert gas charged therewithin. The inert gas, chosen from a group of such gases which will not deleteriously react with the irradiating equipment, forms a flowing stream across the irradiation window to effect its cooling and does not contaminate the vacuum exhaust system or oxidize the filament when penetrating the equipment through any holes which the foil at the irradiation window may incur during the irradiating procedure.

  2. Device for electron beam machining

    Panzer, S.; Ardenne, T. von; Liebergeld, H.

    1984-01-01

    The invention concerns a device for electron beam machining, in particular welding. It is aimed at continuous operation of the electron irradiation device. This is achieved by combining the electron gun with a beam guiding chamber, to which vacuum chambers are connected. The working parts to be welded can be arranged in the latter

  3. Enhancement of electroplex emission by using multi-layer device structure

    Wang Yuanmin; Teng Feng; Xu Zheng; Hou Yanbing; Wang Yongsheng; Xu Xurong

    2005-01-01

    Electroplex emission based on poly(N-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) has been improved dramatically by using a multi-layer device structure indium-tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulphonic acid) (PEDOT:PSS)/PVK/BCP/PVK/BCP/LiF/Al. Electroplex emission at 595 nm has been improved about 10 times under low voltage and four times under high voltage compared to the double layer device ITO/PVK/BCP/Al. The maximum brightness of the device also has been improved about eight times. Bright white emission via electroplex formation can be obtained with Commission International d'Eclairage (CIE) coordinates (0.336, 0.320) at 26 V with a brightness of 123 cd/m 2 . Based on the analysis of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the materials, we suggest the enhancement is mainly ascribed to the confinement effect of the quantum-well-like multi-layer device structure. Every hole and electron has more possibilities to cross recombination at the PVK/BCP interface

  4. Enhancement of electroplex emission by using multi-layer device structure

    Wang Yuanmin [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China) and Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China)]. E-mail: advanced9898@126.com; Xu Zheng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Wang Yongsheng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China)

    2005-04-30

    Electroplex emission based on poly(N-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) has been improved dramatically by using a multi-layer device structure indium-tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulphonic acid) (PEDOT:PSS)/PVK/BCP/PVK/BCP/LiF/Al. Electroplex emission at 595 nm has been improved about 10 times under low voltage and four times under high voltage compared to the double layer device ITO/PVK/BCP/Al. The maximum brightness of the device also has been improved about eight times. Bright white emission via electroplex formation can be obtained with Commission International d'Eclairage (CIE) coordinates (0.336, 0.320) at 26 V with a brightness of 123 cd/m{sup 2}. Based on the analysis of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the materials, we suggest the enhancement is mainly ascribed to the confinement effect of the quantum-well-like multi-layer device structure. Every hole and electron has more possibilities to cross recombination at the PVK/BCP interface.

  5. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  6. Pressurized waterproof case electronic device

    Berumen, Michael L.

    2013-01-01

    A pressurized waterproof case for an electronic device is particularly adapted for fluid-tight containment and operation of a touch-screen electronic device or the like therein at some appreciable water depth. In one example, the case may be formed

  7. ELSA electron stretcher devices

    1979-10-01

    The use of an electron stretcher ring at the Bonn electron synchrotron is discussed. The construction of the proposed ring is described, and the costs are estimated. Possible experiments using this ring are discussed. (HSI)

  8. Propagation of Dirac electrons in Cantor graphene multilayers

    Rodríguez-González, R.; Martínez-Orozco, J. C.; Madrigal-Melchor, J.; Rodríguez-Vargas, I.

    2014-01-01

    In this work we use the standard T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of Silicon-Oxide (SiO 2 ) and Silicon-Carbide (SiC) substrates, in which we applied the Cantor’s series. We calculate the transmittance as a function of energy for different incident angles and different generations of the Cantor’s series. Comparing the transmittance, we found three types of self-similarity: (a) local - into generations, (b) between incident angles and (c) between generations. We also compute the angular distribution of the transmittance for fixed energies finding a self-similar pattern between generations. To our knowledge is the first time that four different self-similar patterns are presented in Cantor-based multilayers

  9. Propagation of Dirac electrons in Cantor graphene multilayers

    Rodríguez-González, R.; Martínez-Orozco, J. C.; Madrigal-Melchor, J.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

    2014-05-15

    In this work we use the standard T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of Silicon-Oxide (SiO{sub 2}) and Silicon-Carbide (SiC) substrates, in which we applied the Cantor’s series. We calculate the transmittance as a function of energy for different incident angles and different generations of the Cantor’s series. Comparing the transmittance, we found three types of self-similarity: (a) local - into generations, (b) between incident angles and (c) between generations. We also compute the angular distribution of the transmittance for fixed energies finding a self-similar pattern between generations. To our knowledge is the first time that four different self-similar patterns are presented in Cantor-based multilayers.

  10. Pressurized waterproof case electronic device

    Berumen, Michael L.

    2013-01-31

    A pressurized waterproof case for an electronic device is particularly adapted for fluid-tight containment and operation of a touch-screen electronic device or the like therein at some appreciable water depth. In one example, the case may be formed as an enclosure having an open top panel or face covered by a flexible, transparent membrane or the like for the operation of the touchscreen device within the case. A pressurizing system is provided for the case to pressurize the case and the electronic device therein to slightly greater than ambient in order to prevent the external water pressure from bearing against the transparent membrane and pressing it against the touch screen, thereby precluding operation of the touch screen device within the case. The pressurizing system may include a small gas cartridge or may be provided from an external source.

  11. Remote detection of electronic devices

    Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

    2012-09-25

    An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

  12. Electronic portal imaging devices

    Lief, Eugene

    2008-01-01

    The topics discussed include, among others, the following: Role of portal imaging; Port films vs. EPID; Image guidance: Elekta volume view; Delivery verification; Automation tasks of portal imaging; Types of portal imaging (Fluorescent screen, mirror, and CCD camera-based imaging; Liquid ion chamber imaging; Amorpho-silicon portal imagers; Fluoroscopic portal imaging; Kodak CR reader; and Other types of portal imaging devices); QA of EPID; and Portal dosimetry (P.A.)

  13. Tailoring electronic properties of multilayer phosphorene by siliconization

    Malyi, Oleksandr I.; Sopiha, Kostiantyn V.; Radchenko, Ihor; Wu, Ping; Persson, Clas

    Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP$_2$ compounds with a weak interlayer interaction. Our analysis demonstrates that these systems are semiconductors with band gap energies that can be governed by varying the thickness and stacking order. Specifically, siliconization of phosphorene allows to design 2d-SiP$_x$ materials with significantly weaker thickness dependence of electronic properties than that in 2d-P and to develop ways for their tailoring. We also reveal the spatial dependence of electronic properties for 2d-SiP$_x$ highlighting difference in effective band gaps for different layers. Particularly, our results show that central layers in the multilayer 2d systems determine overall electronic properties, while the role of the outermost layers is noticeably smaller.

  14. Surface patterning of multilayer graphene by ultraviolet laser irradiation in biomolecule sensing devices

    Chang, Tien-Li, E-mail: tlchang@ntnu.edu.tw; Chen, Zhao-Chi

    2015-12-30

    Graphical abstract: - Highlights: • Direct UV laser irradiation on multilayer graphene was discussed. • Multilayer graphene with screen-printed process was presented. • Surface patterning of multilayer graphene at fluence threshold was investigated. • Electrical response of glucose in sensing devices can be studied. - Abstract: The study presents a direct process for surface patterning of multilayer graphene on the glass substrate as a biosensing device. In contrast to lithography with etching, the proposed process provides simultaneous surface patterning of multilayer graphene through nanosecond laser irradiation. In this study, the multilayer graphene was prepared by a screen printing process. Additionally, the wavelength of the laser beam was 355 nm. To perform the effective laser process with the small heat affected zone, the surface patterns on the sensing devices could be directly fabricated using the laser with optimal control of the pulse overlap at a fluence threshold of 0.63 J/cm{sup 2}. The unique patterning of the laser-ablated surface exhibits their electrical and hydrophilic characteristics. The hydrophilic surface of graphene-based sensing devices was achieved in the process with the pulse overlap of 90%. Furthermore, the sensing devices for controlling the electrical response of glucose by using glucose oxidase can be used in sensors in commercial medical applications.

  15. Polymer electronic devices and materials.

    Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

    2006-01-01

    Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

  16. Electron transport in magnetic multilayers: effect of disorder

    Drchal, Václav; Kudrnovský, Josef; Bruno, P.; Dederichs, P. H.; Turek, Ilja; Weinberger, P.

    2002-01-01

    Roč. 65, - (2002), s. 214414-1-214414-8 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.30; GA ČR GA202/00/0122; GA AV ČR IAA1010829; GA AV ČR IBS2041105 Institutional research plan: CEZ:AV0Z1010914 Keywords : electron transport * magnetic multilayers * ballistic transport * diffusive transport * disorder Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  17. Electronic control devices

    Hartill, D.L.

    1981-01-01

    The subject of these lectures is the translation of information from particle detectors to computers. Large solid angle general purpose detectors at the intersection regions of high energy e+e- storage rings and pp and pp storage rings are discussed. Three choices for data acquisition are reviewed: use CAMAC (Computer Aided Measurement and Control), start from scratch and design a system, or wait for the final version of the proposed FASTBUS to be developed. The do-it-yourself procedure includes designs of drift chamber discriminator, time to amplitude converter, and data card block diagram. Trigger systems, the fast decision making systems judging an event interesting enough for a read-out cycle to be initiated, are discussed. Finally, a FASTBUS system layout, with its goals of minimum bus speed, general system topologies, and support multiple smart devices is given

  18. Evaluation of biofouling in stainless microfluidic channels for implantable multilayered dialysis device

    Ota, Takashi; To, Naoya; Kanno, Yoshihiko; Miki, Norihisa

    2017-06-01

    An implantable artificial kidney can markedly improve the quality of life of renal disease patients. Our group has developed an implantable multilayered dialysis system consisting of microfluidic channels and dialysis membranes. Long-term evaluation is necessary for implant devices where biofouling is a critical factor, culminating in the deterioration of dialysis performance. Our previous work revealed that surface conditions, which depend on the manufacturing process, determine the amount of biofouling, and that electrolytic etching is the most suitable technique for forming a channel wall free of biofouling. In this study, we investigated the electrolytic etching conditions in detail. We conducted in vitro experiments for 7 d and evaluated the adhesion of biomaterials by scanning electron microscopy. The experiments revealed that a surface mirror-finished by electrolytic etching effectively prevents biofouling.

  19. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  20. Multilayer mirrors as power filters in insertion device beamlines

    Kortright, J.B.; DiGennaro, R.S.

    1988-08-01

    The power-filtering capabilities of multilayer band-pass x-ray mirrors relative to total reflection low-pass mirrors is presented. Results are based on calculations assuming proposed wiggler sources on the upcoming generation of low energy (1.5 GeV) and high energy (7.0 GeV) synchrotron radiation sources. Results show that multilayers out-perform total reflection mirrors in terms of reduction in reflected power by roughly an order of magnitude, with relatively small increases in total absorbed power and power density over total reflection mirrors, and with comparable reflected flux values. Various aspects of this potential application of multilayer x-ray optics are discussed. 13 refs., 3 figs., 1 tab

  1. Electron emitting filaments for electron discharge devices

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1988-01-01

    This patent describes an electron emitting device for use in an electron discharge system. It comprises: a filament having a pair of terminal ends, electrical supply means for supplying electrical power to the terminal ends of the filament for directly heating the filament by the passage of an electrical current along the filament between the terminal ends, the filament being substantially tapered in cross section continuously in one direction from one of its pair of terminal ends to another of its pair of terminal ends to achieve uniform heating of the filament along the length thereof by compensating for the nonuniform current along the filament due to the emission of electrons therefrom

  2. Electronic device and method of manufacturing an electronic device

    2009-01-01

    An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units

  3. Processes for multi-layer devices utilizing layer transfer

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  4. The calculation of electron depth-dose distributions in multilayer medium

    Wang Chuanshan; Xu Mengjie; Li Zhiliang; Feng Yongxiang; Li Panlin

    1989-01-01

    Energy deposition in multilayer medium and the depth dose distribution in the layers are studied. Based on semi-empirical calculation of electron energy absorption in matter with EDMULT program of Tabata and Ito, further work has been carried out to extend the computation to multilayer composite material. New program developed in this paper makes IBM-PC compatible with complicated electron dose calculations

  5. Pressure driven digital logic in PDMS based microfluidic devices fabricated by multilayer soft lithography.

    Devaraju, Naga Sai Gopi K; Unger, Marc A

    2012-11-21

    Advances in microfluidics now allow an unprecedented level of parallelization and integration of biochemical reactions. However, one challenge still faced by the field has been the complexity and cost of the control hardware: one external pressure signal has been required for each independently actuated set of valves on chip. Using a simple post-modification to the multilayer soft lithography fabrication process, we present a new implementation of digital fluidic logic fully analogous to electronic logic with significant performance advances over the previous implementations. We demonstrate a novel normally closed static gain valve capable of modulating pressure signals in a fashion analogous to an electronic transistor. We utilize these valves to build complex fluidic logic circuits capable of arbitrary control of flows by processing binary input signals (pressure (1) and atmosphere (0)). We demonstrate logic gates and devices including NOT, NAND and NOR gates, bi-stable flip-flops, gated flip-flops (latches), oscillators, self-driven peristaltic pumps, delay flip-flops, and a 12-bit shift register built using static gain valves. This fluidic logic shows cascade-ability, feedback, programmability, bi-stability, and autonomous control capability. This implementation of fluidic logic yields significantly smaller devices, higher clock rates, simple designs, easy fabrication, and integration into MSL microfluidics.

  6. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  7. Electron transfer kinetics on mono- and multilayer graphene.

    Velický, Matěj; Bradley, Dan F; Cooper, Adam J; Hill, Ernie W; Kinloch, Ian A; Mishchenko, Artem; Novoselov, Konstantin S; Patten, Hollie V; Toth, Peter S; Valota, Anna T; Worrall, Stephen D; Dryfe, Robert A W

    2014-10-28

    Understanding of the electrochemical properties of graphene, especially the electron transfer kinetics of a redox reaction between the graphene surface and a molecule, in comparison to graphite or other carbon-based materials, is essential for its potential in energy conversion and storage to be realized. Here we use voltammetric determination of the electron transfer rate for three redox mediators, ferricyanide, hexaammineruthenium, and hexachloroiridate (Fe(CN)(6)(3-), Ru(NH3)(6)(3+), and IrCl(6)(2-), respectively), to measure the reactivity of graphene samples prepared by mechanical exfoliation of natural graphite. Electron transfer rates are measured for varied number of graphene layers (1 to ca. 1000 layers) using microscopic droplets. The basal planes of mono- and multilayer graphene, supported on an insulating Si/SiO(2) substrate, exhibit significant electron transfer activity and changes in kinetics are observed for all three mediators. No significant trend in kinetics with flake thickness is discernible for each mediator; however, a large variation in kinetics is observed across the basal plane of the same flakes, indicating that local surface conditions affect the electrochemical performance. This is confirmed by in situ graphite exfoliation, which reveals significant deterioration of initially, near-reversible kinetics for Ru(NH3)(6)(3+) when comparing the atmosphere-aged and freshly exfoliated graphite surfaces.

  8. Healable, Transparent, Room-Temperature Electronic Sensors Based on Carbon Nanotube Network-Coated Polyelectrolyte Multilayers.

    Bai, Shouli; Sun, Chaozheng; Yan, Hong; Sun, Xiaoming; Zhang, Han; Luo, Liang; Lei, Xiaodong; Wan, Pengbo; Chen, Xiaodong

    2015-11-18

    Transparent and conductive film based electronics have attracted substantial research interest in various wearable and integrated display devices in recent years. The breakdown of transparent electronics prompts the development of transparent electronics integrated with healability. A healable transparent chemical gas sensor device is assembled from layer-by-layer-assembled transparent healable polyelectrolyte multilayer films by developing effective methods to cast transparent carbon nanotube (CNT) networks on healable substrates. The healable CNT network-containing film with transparency and superior network structures on self-healing substrate is obtained by the lateral movement of the underlying self-healing layer to bring the separated areas of the CNT layer back into contact. The as-prepared healable transparent film is assembled into healable transparent chemical gas sensor device for flexible, healable gas sensing at room temperature, due to the 1D confined network structure, relatively high carrier mobility, and large surface-to-volume ratio. The healable transparent chemical gas sensor demonstrates excellent sensing performance, robust healability, reliable flexibility, and good transparency, providing promising opportunities for developing flexible, healable transparent optoelectronic devices with the reduced raw material consumption, decreased maintenance costs, improved lifetime, and robust functional reliability. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Fullerene Derived Molecular Electronic Devices

    Menon, Madhu; Srivastava, Deepak; Saini, Subbash

    1998-01-01

    The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.

  10. Capacitor ageing in electronic devices

    Richard B. N. Vital

    2015-10-01

    Full Text Available The moment when an electronic component doesn’t work like requirements, previously established is a task that need to be considered since began of a system design. However, the use of different technologies, operating under several environmental conditions, makes a component choice a complex step in system design. This paper analyzes the effects that ageing phenomenon of capacitors may introduce in electronic devices operation. For this reason, reliability concepts, processes and mechanism of degradation are presented. Additionally, some mathematical models are presented to assist maintenance activities or component replacement. The presented approach compares the operability of intact and aged components.

  11. Quantification of multielement-multilayer-samples in electron probe analysis

    Pfeiffer, A.

    1995-03-01

    The following dissertation presents the theoretical basis of analytical correction models and Monte Carlo simulations in the field of electron probe microanalysis to describe the excitation conditions of x-rays in a multilayer-multielement-sample. In this connection analyzing programs have been developed to make a quantitative investigation of heterogeneous samples possible. In the work the mathematical methods and formulas, which are mainly based on empirical and semiempirical findings, are described and their validity is discussed in detail. Especially the improvements of the 'multiple reflections'-model by August are compared with the Φ(ρz)-models by Pouchou, Merlet and Bastin. The calculations of depth distribution functions for characteristics and continuous fluorescence excitation result in a consistent and completeΦ(ρz)-model. This allows to analyze layered structures in great detail. Because of the increasing importance in electron probe microanalysis and as a reference method a Monte Carlo model is described. With this model electron trajectories and excitation conditions in arbitrary two dimensional geometries can be calculated. The validity of the analytical model is proven with a comprehensive comparison of results of new calculations to published data. To show an application of the programs and models in routine use in the industrial research and development, a quantitative analysis of a Co/Si system is made. In the conclusion of this dissertation some reflections upon investigations, which are based on this work and which should be made in future are outlined. (author)

  12. Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education

    Chang, Shu-Hsuan; Chang, Yung-Cheng; Yang, Cheng-Hong; Chen, Jun-Rong; Kuo, Yen-Kuang

    2006-02-01

    Organic light-emitting diodes (OLEDs) have been extensively developed in the past few years. The OLED displays have advantages over other displays, such as CRT, LCD, and PDP in thickness, weight, brightness, response time, viewing angle, contrast, driving power, flexibility, and capability of self-emission. In this work, the optical and electronic properties of multilayer OLED devices are numerically studied with an APSYS (Advanced Physical Model of Semiconductor Devices) simulation program. Specifically, the emission and absorption spectra of the Alq 3, DCM, PBD, and SA light-emitting layers, and energy band diagrams, electron-hole recombination rates, and current-voltage characteristics of the simulated OLED devices, typically with a multilayer structure of metal/Alq 3/EML/TPD/ITO constructed by Lim et al., are investigated and compared to the experimental results. The physical models utilized in this work are similar to those presented by Ruhstaller et al. and Hoffmann et al. The simulated results indicate that the emission spectra of the Alq 3, DCM, PBD, and SA light-emitting layers obtained in this study are in good agreement with those obtained experimentally by Zugang et al. Optimization of the optical and electronic performance of the multilayer OLED devices are attempted. In order to further promote the research results, the whole numerical simulation process for optimizing the design of OLED devices has been applied to a project-based course of OLED device design to enhance the students' skills in photonics device design at the Graduate Institute of Photonics of National Changhua University of Education in Taiwan. In the meantime, the effectiveness of the course has been proved by various assessments. The application of the results is a useful point of reference for the research on photonics device design and engineering education. Therefore, it proffers a synthetic effect between innovation and practical application.

  13. Carrier behavior in special multilayer device composed of different transition metal oxide-based intermediate connectors

    Deng, Yan-Hong; Chen, Xiang-Yu; Ou, Qing-Dong; Wang, Qian-Kun; Jiang, Xiao-Cheng; Zhang, Dan-Dan; Li, Yan-Qing

    2014-01-01

    The impact of illumination on the connection part of the tandem organic light-emitting diodes was studied by using a special organic multilayer sample consisted of two organic active layers coupled with different transition metal oxide (TMO)-based intermediate connectors (ICs). Through measuring the current density-voltage characteristic, interfacial electronic structures, and capacitance-voltage characteristic, we observe an unsymmetrical phenomenon in current density-voltage and capacitance-voltage curves of Mg:Alq 3 /MoO 3 and MoO 3 composed devices, which was induced by the charge spouting zone near the ICs region and the recombination state in the MoO 3 layer. Moreover, Mg:Alq 3 /MoO 3 composed device displays a photovoltaic effect and the V oc shifts to forward bias under illumination. Our results demonstrate that the TMO-based IC structure coupled with photovoltaic effect can be a good approach for the study of photodetector, light sensor, and so on.

  14. Physics of Magnetic Multilayers and Devices at Millimeter Wave Frequencies

    Celinski, Zbigniew

    2003-01-01

    .... During the last decades, we have witnessed incredible progress in high frequency semiconductor electronics and, in particular, a movement towards the synthesis of different electronic components...

  15. Hot-electrons-induced ultrafast demagnitization in Co/Pt multilayers

    Bergeard, N.; Hehn, M.; Mangin, S.; Lengaigne, G.; Montaigne, F.; Lalieu, M. L. M.; Koopmans, B.; Malinowski, G.

    2016-01-01

    Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co/Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based

  16. [The role of BCP in electroluminescence of multilayer organic light-emitting devices].

    Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

    2009-03-01

    As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

  17. Review of multi-layered magnetoelectric composite materials and devices applications

    Chu, Zhaoqiang; PourhosseiniAsl, MohammadJavad; Dong, Shuxiang

    2018-06-01

    Multiferroic materials with the coexistence of at least two ferroic orders, such as ferroelectricity, ferromagnetism, or ferroelasticity, have recently attracted ever-increasing attention due to their potential for multifunctional device applications, including magnetic and current sensors, energy harvesters, magnetoelectric (ME) random access memory and logic devices, tunable microwave devices, and ME antenna. In this article, we provide a review of the recent and ongoing research efforts in the field of multi-layered ME composites. After a brief introduction to ME composites and ME coupling mechanisms, we review recent advances in multi-layered ME composites as well as their device applications based on the direct ME effect, magnetic sensors in particular. Finally, some remaining challenges and future perspective of ME composites and their engineering applications will be discussed.

  18. Multilayered gold/silica nanoparticulate bilayer devices using layer-by-layer self organisation for flexible bending and pressure sensing applications

    Shah Alam, Md. [Department of Electrical and Electronic Engineering, Rajshahi University of Engineering and Technology, Rajshahi 6204 (Bangladesh); Center of Excellence in Nanotechnology, Asian Institute of Technology, 12120 Pathumthani (Thailand); Mohammed, Waleed S., E-mail: waleed.m@bu.ac.th [Center of Research in Optoelectronics, Communication and Control System (BU-CROCCS), School of Engineering, Bangkok University, Pathumthani 12120 (Thailand); Dutta, Joydeep, E-mail: dutta@squ.edu.om [Center of Excellence in Nanotechnology, Asian Institute of Technology, 12120 Pathumthani (Thailand); Chair in Nanotechnology, Water Research Center, Sultan Qaboos University, P.O. Box 33, Al Khoud 123 (Oman)

    2014-02-17

    A pressure and bending sensor was fabricated using multilayer thin films fabricated on a flexible substrate based on layer-by-layer self-organization of 18 nm gold nanoparticles separated by a dielectric layer of 30 nm silica nanoparticles. 50, 75, and 100 gold-silica bi-layered films were deposited and the device characteristics were studied. A threshold voltage was required for electron conduction which increases from 2.4 V for 50 bi-layers to 3.3 V for 100 bi-layers. Upon bending of the device up to about 52°, the threshold voltage and slope of the I-V curves change linearly. Electrical characterization of the multilayer films was carried out under ambient conditions with different pressures and bending angles in the direct current mode. This study demonstrates that the developed multilayer thin films can be used as pressure as well as bending sensing applications.

  19. Conducting polymer based biomolecular electronic devices

    Conducting polymers; LB films; biosensor microactuators; monolayers. ... have been projected for applications for a wide range of biomolecular electronic devices such as optical, electronic, drug-delivery, memory and biosensing devices.

  20. Carbon footprint of electronic devices

    Sloma, Marcin

    2013-07-01

    Paper assesses the greenhouse gas emissions related to the electronic sectors including information and communication technology and media sectors. While media often presents the carbon emission problem of other industries like petroleum industry, the airlines and automobile sectors, plastics and steel manufacturers, the electronics industry must include the increasing carbon footprints caused from their applications like media and entertainment, computers and cooling devices, complex telecommunications networks, cloud computing and powerful mobile phones. In that sense greenhouse gas emission of electronics should be studied in a life cycle perspective, including regular operational electricity use. Paper presents which product groups or processes are major contributors in emission. From available data and extrapolation of existing information we know that the information and communication technology sector produced 1.3% and media sector 1.7% of global gas emissions within production cycle, using the data from 2007.In the same time global electricity use of that sectors was 3.9% and 3.2% respectively. The results indicate that for both sectors operation leads to more gas emissions than manufacture, although impacts from the manufacture is significant, especially in the supply chain. Media electronics led to more emissions than PCs (manufacture and operation). Examining the role of electronics in climate change, including disposal of its waste, will enable the industry to take internal actions, leading to lowering the impact on the climate change within the sector itself.

  1. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  2. Single Molecule Electronics and Devices

    Tsutsui, Makusu; Taniguchi, Masateru

    2012-01-01

    The manufacture of integrated circuits with single-molecule building blocks is a goal of molecular electronics. While research in the past has been limited to bulk experiments on self-assembled monolayers, advances in technology have now enabled us to fabricate single-molecule junctions. This has led to significant progress in understanding electron transport in molecular systems at the single-molecule level and the concomitant emergence of new device concepts. Here, we review recent developments in this field. We summarize the methods currently used to form metal-molecule-metal structures and some single-molecule techniques essential for characterizing molecular junctions such as inelastic electron tunnelling spectroscopy. We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. We also discuss intriguing issues to be addressed further in the future such as heat and thermoelectric transport in an individual molecule. PMID:22969345

  3. A microdot multilayer oxide device: let us tune the strain-ionic transport interaction.

    Schweiger, Sebastian; Kubicek, Markus; Messerschmitt, Felix; Murer, Christoph; Rupp, Jennifer L M

    2014-05-27

    In this paper, we present a strategy to use interfacial strain in multilayer heterostructures to tune their resistive response and ionic transport as active component in an oxide-based multilayer microdot device on chip. For this, fabrication of strained multilayer microdot devices with sideways attached electrodes is reported with the material system Gd0.1Ce0.9O(2-δ)/Er2O3. The fast ionic conducting Gd0.1Ce0.9O(2-δ) single layers are altered in lattice strain by the electrically insulating erbia phases of a microdot. The strain activated volume of the Gd0.1Ce0.9O(2-δ) is investigated by changing the number of individual layers from 1 to 60 while keeping the microdot at a constant thickness; i.e., the proportion of strained volume was systematically varied. Electrical measurements showed that the activation energy of the devices could be altered by Δ0.31 eV by changing the compressive strain of a microdot ceria-based phase by more than 1.16%. The electrical conductivity data is analyzed and interpreted with a strain volume model and defect thermodynamics. Additionally, an equivalent circuit model is presented for sideways contacted multilayer microdots. We give a proof-of-concept for microdot contacting to capture real strain-ionic transport effects and reveal that for classic top-electrode contacting the effect is nil, highlighting the need for sideways electric contacting on a nanoscopic scale. The near order ionic transport interaction is supported by Raman spectroscopy measurements. These were conducted and analyzed together with fully relaxed single thin film samples. Strain states are described relative to the strain activated volumes of Gd0.1Ce0.9O(2-δ) in the microdot multilayer. These findings reveal that strain engineering in microfabricated devices allows altering the ionic conduction over a wide range beyond classic doping strategies for single films. The reported fabrication route and concept of strained multilayer microdots is a promising path

  4. A device for measuring electron beam characteristics

    M. Andreev

    2017-01-01

    Full Text Available This paper presents a device intended for diagnostics of electron beams and the results obtained with this device. The device comprises a rotating double probe operating in conjunction with an automated probe signal collection and processing system. This provides for measuring and estimating the electron beam characteristics such as radius, current density, power density, convergence angle, and brightness.

  5. Multi-layer micro/nanofluid devices with bio-nanovalves

    Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

    2013-01-01

    A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

  6. Characterization of multilayer nitride coatings by electron microscopy and modulus mapping

    Pemmasani, Sai Pramod; Rajulapati, Koteswararao V.; Ramakrishna, M.; Valleti, Krishna; Gundakaram, Ravi C.; Joshi, Shrikant V.

    2013-01-01

    This paper discusses multi-scale characterization of physical vapour deposited multilayer nitride coatings using a combination of electron microscopy and modulus mapping. Multilayer coatings with a triple layer structure based on TiAlN and nanocomposite nitrides with a nano-multilayered architecture were deposited by Cathodic arc deposition and detailed microstructural studies were carried out employing Energy Dispersive Spectroscopy, Electron Backscattered Diffraction, Focused Ion Beam and Cross sectional Transmission Electron Microscopy in order to identify the different phases and to study microstructural features of the various layers formed as a result of the deposition process. Modulus mapping was also performed to study the effect of varying composition on the moduli of the nano-multilayers within the triple layer coating by using a Scanning Probe Microscopy based technique. To the best of our knowledge, this is the first attempt on modulus mapping of cathodic arc deposited nitride multilayer coatings. This work demonstrates the application of Scanning Probe Microscopy based modulus mapping and electron microscopy for the study of coating properties and their relation to composition and microstructure. - Highlights: • Microstructure of a triple layer nitride coating studied at multiple length scales. • Phases identified by EDS, EBSD and SAED (TEM). • Nanolayered, nanocomposite structure of the coating studied using FIB and TEM. • Modulus mapping identified moduli variation even in a nani-multilayer architecture

  7. Formulation, evaluation, and comparison of bilayered and multilayered mucoadhesive buccal devices of propranolol hydrochloride.

    Patel, Vishnu M; Prajapati, Bhupendra G; Patel, Madhabhai M

    2007-03-16

    The purpose of this research work was to establish mucoadhesive buccal devices of propranolol hydrochloride (PRH) in the forms of bilayered and multilayered tablets. The tablets were prepared using sodium carboxymethylcellulose (SCMC) and Carbopol-934 (CP) as bioadhesive polymers to impart mucoadhesion and ethyl cellulose (EC) to act as an impermeable backing layer. Buccal devices were evaluated by different parameters such as weight uniformity, content uniformity, thickness, hardness, surface pH, swelling index, ex vivo mucoadhesive strength, ex vivo mucoadhesion time, in vitro drug release, and in vitro drug permeation. As compared with bilayered tablets, multilayered tablets showed slow release rate of drug with improved ex vivo bioadhesive strength and enhanced ex vivo mucoadhesion time. The mechanism of drug release was found to be non-Fickian diffusion (value of n between 0.5 and 1.0) for both the buccal devices. The stability of drug in both the optimized buccal devices was tested for 6 hours in natural human saliva; both the buccal devices were found to be stable in natural human saliva. The present study concludes that mucoadhesive buccal devices of PRH can be a good way to bypass the extensive hepatic first-pass metabolism and to improve the bioavailability of PRH.

  8. Complications after cardiac implantable electronic device implantations

    Kirkfeldt, Rikke Esberg; Johansen, Jens Brock; Nohr, Ellen Aagaard

    2013-01-01

    Complications after cardiac implantable electronic device (CIED) treatment, including permanent pacemakers (PMs), cardiac resynchronization therapy devices with defibrillators (CRT-Ds) or without (CRT-Ps), and implantable cardioverter defibrillators (ICDs), are associated with increased patient...

  9. Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

    2015-12-14

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  10. Design refinement of multilayer optical thin film devices with two optimization techniques

    Apparao, K.V.S.R.

    1992-01-01

    The design efficiency of two different optimization techniques of designing multilayer optical thin film devices is compared. Ten different devices of varying complexities are chosen as design examples for the comparison. The design refinement efficiency and the design parameter characteristics of all the sample designs obtained with the two techniques are compared. The results of the comparison demonstrate that the new method of design developed using damped least squares technique with indirect derivatives give superior and efficient designs compared to the method developed with direct derivatives. (author). 23 refs., 4 tabs., 14 figs

  11. Off-axis electron holography of ferromagnetic multilayer nanowires

    Akhtari-Zavareh, Azadeh; Carignan, L. P.; Yelon, A.

    2014-01-01

    with respect to the axis of the wires. In thinner Cu/CoFeB ((multilayer, magnetic field vortices were detected, associated with opposing magnetization in neighbouring layers. The measured crystallinity, compositions, and layer thicknesses of individual NWs were found to be significantly different...

  12. Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

    Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

    1990-09-01

    We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

  13. Tuning the electronic properties of gated multilayer phosphorene: A self-consistent tight-binding study

    Li, L. L.; Partoens, B.; Peeters, F. M.

    2018-04-01

    By taking account of the electric-field-induced charge screening, a self-consistent calculation within the framework of the tight-binding approach is employed to obtain the electronic band structure of gated multilayer phosphorene and the charge densities on the different phosphorene layers. We find charge density and screening anomalies in single-gated multilayer phosphorene and electron-hole bilayers in dual-gated multilayer phosphorene. Due to the unique puckered lattice structure, both intralayer and interlayer charge screenings are important in gated multilayer phosphorene. We find that the electric-field tuning of the band structure of multilayer phosphorene is distinctively different in the presence and absence of charge screening. For instance, it is shown that the unscreened band gap of multilayer phosphorene decreases dramatically with increasing electric-field strength. However, in the presence of charge screening, the magnitude of this band-gap decrease is significantly reduced and the reduction depends strongly on the number of phosphorene layers. Our theoretical results of the band-gap tuning are compared with recent experiments and good agreement is found.

  14. Investigation of Electronic Corrosion at Device Level

    Jellesen, Morten Stendahl; Minzari, Daniel; Rathinavelu, Umadevi

    2010-01-01

    This work presents device level testing of a lead free soldered electronic device tested with bias on under cyclic humidity conditions in a climatic chamber. Besides severe temperature and humidity during testing some devices were deliberately contaminated before testing. Contaminants investigated...

  15. Synaptic electronics: materials, devices and applications.

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  16. Synaptic electronics: materials, devices and applications

    Kuzum, Duygu; Yu, Shimeng; Philip Wong, H-S

    2013-01-01

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented. (topical review)

  17. Fabrication of hybrid molecular devices using multi-layer graphene break junctions

    Island, J. O.; Holovchenko, A.; Koole, M.; Alkemade, P. F. A.; Menelaou, M.; Aliaga-Alcalde, N.; Burzurí, E.; van der Zant, H. S. J.

    2014-11-01

    We report on the fabrication of hybrid molecular devices employing multi-layer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.

  18. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  19. Solid-state electronic devices an introduction

    Papadopoulos, Christo

    2014-01-01

    A modern and concise treatment of the solid state electronic devices that are fundamental to electronic systems and information technology is provided in this book. The main devices that comprise semiconductor integrated circuits are covered in a clear manner accessible to the wide range of scientific and engineering disciplines that are impacted by this technology. Catering to a wider audience is becoming increasingly important as the field of electronic materials and devices becomes more interdisciplinary, with applications in biology, chemistry and electro-mechanical devices (to name a few) becoming more prevalent. Updated and state-of-the-art advancements are included along with emerging trends in electronic devices and their applications. In addition, an appendix containing the relevant physical background will be included to assist readers from different disciplines and provide a review for those more familiar with the area. Readers of this book can expect to derive a solid foundation for understanding ...

  20. Electronic devices for analog signal processing

    Rybin, Yu K

    2012-01-01

    Electronic Devices for Analog Signal Processing is intended for engineers and post graduates and considers electronic devices applied to process analog signals in instrument making, automation, measurements, and other branches of technology. They perform various transformations of electrical signals: scaling, integration, logarithming, etc. The need in their deeper study is caused, on the one hand, by the extension of the forms of the input signal and increasing accuracy and performance of such devices, and on the other hand, new devices constantly emerge and are already widely used in practice, but no information about them are written in books on electronics. The basic approach of presenting the material in Electronic Devices for Analog Signal Processing can be formulated as follows: the study with help from self-education. While divided into seven chapters, each chapter contains theoretical material, examples of practical problems, questions and tests. The most difficult questions are marked by a diamon...

  1. Graphene nanoribbons for electronic devices

    Geng, Zhansong; Granzner, Ralf; Kittler, Mario; Schwierz, Frank [FG Festkoerperelektronik, Institut fuer Mikro- und Nanoelektronik und Institut fuer Mikro- und Nanotechnologien MacroNano registered, Technische Universitaet Ilmenau (Germany); Haehnlein, Bernd; Auge, Manuel; Pezoldt, Joerg [FG Nanotechnologie, Institut fuer Mikro- und Nanoelektronik und Institut fuer Mikro- und Nanotechnologien MacroNano registered, Technische Universitaet Ilmenau (Germany); Lebedev, Alexander A. [National Research University of Information Technologies, Mechanics and Optics, St. Petersburg (Russian Federation); Division Solid State Electronics, Ioffe Institute, Sankt-Peterburg (Russian Federation); Davydov, Valery Y. [Division Solid State Electronics, Ioffe Institute, Sankt-Peterburg (Russian Federation)

    2017-11-15

    Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types - graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that - in spite of the remarkable progress achieved during the past 10 years - graphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    Chen, Yuehua; Zhang, Mengke [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Zhang, Xinwen, E-mail: iamxwzhang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lai, Wenyong, E-mail: iamwylai@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Huang, Wei [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

    2017-06-15

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  3. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    Chen, Yuehua; Zhang, Mengke; Zhang, Xinwen; Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli; Lai, Wenyong; Huang, Wei

    2017-01-01

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  4. 78 FR 16865 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    2013-03-19

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... certain electronic devices, including wireless communication devices, portable music and data processing...

  5. High temperature electronic gain device

    McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

  6. Size-dependent electronic eigenstates of multilayer organic quantum wells

    Nguyen Ba An; Hanamura, E.

    1995-09-01

    A detailed theoretical treatment is given eigenfunctions and eigenenergies of a multilayer organic quantum well sandwiched between two different dielectric media. The abrupt change of dielectric constants at the interfaces distorts the wave function and results in possible surface states in addition to propagating states. The proper boundary conditions are accounted for by the method of image charges. Analytic criteria for existence of surface states are established using the nearest layers approximation, which depend not only on the intralayer parameters but also on the number of layers. The size dependence together with the dependence on signs and relative magnitudes of the structure parameters fully determine the energy spectrum of propagating states as well as the number and the location of surface states. (author). 28 refs, 10 figs, 2 tabs

  7. Pressurized waterproof case for electronic device

    Berumen, Michael L.

    2013-01-01

    having an open top panel or face covered by a flexible, transparent membrane or the like for the operation of the touch-screen device within the case. A pressurizing system is provided for the case to pressurize the case and the electronic device therein

  8. A high resolution electron microscopy investigation of curvature in multilayer graphite sheets

    Wang Zhenxia; Hu Jun; Wang Wenmin; Yu Guoqing

    1998-01-01

    Here the authors report a carbon sample generated by ultrasonic wave high oriented pyrolytic graphite (HOPG) in ethanol, water or ethanol-water mixed solution. High resolution transmission electron microscopy (HRTEM) revealed many multilayer graphite sheets with a total curved angle that is multiples of θ 0 (= 30 degree C). Close examination of the micrographs showed that the curvature is accomplished by bending the lattice planes. A possible explanation for the curvature in multilayer graphite sheets is discussed based on the conformation of graphite symmetry axes and the formation of sp 3 -like line defects in the sp 2 graphitic network

  9. 78 FR 34669 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    2013-06-10

    ..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... importing wireless communication devices, portable music and data processing devices, and tablet computers... certain electronic devices, including wireless communication devices, portable music and data processing...

  10. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones

    Assili, Mohamed; Haddad, Sonia

    2013-01-01

    We theoretically study the effect of the motion and the merging of Dirac cone on the interlayer magnetoresistance in multilayer graphene like systems. This merging, which could be induced by a uniaxial strain, gives rise in monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase where Dirac points disappear. Based on a universal Hamiltonian proposed to describe the motion and the merging of Dirac points in two dimensional Dirac electron cr...

  11. Magnetic multilayer structure

    Herget, Philipp; O'Sullivan, Eugene J.; Romankiw, Lubomyr T.; Wang, Naigang; Webb, Bucknell C.

    2016-07-05

    A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

  12. Electronic cooling using thermoelectric devices

    Zebarjadi, M., E-mail: m.zebarjadi@rutgers.edu [Department of Mechanical and Aerospace Engineering, Rutgers University, Piscataway, New Jersey 08854 (United States); Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States)

    2015-05-18

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  13. DEVICES FOR COOLING ELECTRONIC CIRCUIT BOARDS

    T. A. Ismailov; D. V. Evdulov; A. G. Mustafaev; D. K. Ramazanova

    2014-01-01

    In the work described structural variants of devices for cooling electronic circuit boards, made on the basis of thermoelectric batteries and consumable working substances, implementing uneven process of removing heat from heat-generating components. A comparison of temperature fields of electronic circuit simulator with his uniform and non-uniform cooling. 

  14. DEVICES FOR COOLING ELECTRONIC CIRCUIT BOARDS

    T. A. Ismailov

    2014-01-01

    Full Text Available In the work described structural variants of devices for cooling electronic circuit boards, made on the basis of thermoelectric batteries and consumable working substances, implementing uneven process of removing heat from heat-generating components. A comparison of temperature fields of electronic circuit simulator with his uniform and non-uniform cooling. 

  15. INTERFACE ELECTRONIC MEDICAL CARD ON MOBILE DEVICE

    Y. L. Nechyporenko

    2013-05-01

    Full Text Available The concept designed by electronic medical card for heterogeneous environment of medical information systems at various levels. Appropriate model and technical solution. Done evaluating operating systems for mobile devices. Designed and produced by the project mobile application on Android OS as an electronic medical record on a Tablet PC Acer.

  16. Characterisation of phases in nanostructured, multilayered titanium alloys by analytical and high-resolution electron microscopy.

    Czyrska-Filemonowicz, A; Buffat, P A

    2009-01-01

    Surface processing of a Ti-6Al-4V alloy led to a complex multilayered microstructure containing several phases of the Ni-Ti-P-Al-O system, which improves the mechanical and tribological surface properties. The microstructure, chemical and phase compositions of the hard layer formed on the surface were investigated by LM, XRD, SEM as well as analytical/high-resolution TEM, STEM, EDS, electron diffraction and FIB. Phase identification based on electron diffraction, HRTEM and EDS microanalysis revealed the presence of several binary and ternary phases in the system Ti-Ni-P, sometimes with partial substitution of Ti by Al. However some phases, mainly nanoparticles, still remain not identified satisfactorily. Electron microscopy techniques used for identification of phases present in surface multilayers and some practical limits to their routine application are reminded here.

  17. Semiconductor-based, large-area, flexible, electronic devices

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  18. Pressurized waterproof case for electronic device

    Berumen, Michael L.

    2013-01-31

    The pressurized waterproof case for an electronic device is particularly adapted for the waterproof containment and operation of a touch-screen computer or the like therein at some appreciable water depth. The case may be formed as an enclosure having an open top panel or face covered by a flexible, transparent membrane or the like for the operation of the touch-screen device within the case. A pressurizing system is provided for the case to pressurize the case and the electronic device therein to slightly greater than ambient in order to prevent the external water pressure from bearing against the transparent membrane and pressing it against the touch screen, thereby precluding operation of the touch screen device within the case. The pressurizing system may be a small gas cartridge (e.g., CO2), or may be provided from an external source, such as the diver\\'s breathing air. A pressure relief valve is also provided.

  19. New Vacuum Electronic Devices for Radar

    Hu Yinfu

    2016-08-01

    Full Text Available Vacuum Electronic Devices (VEDs which are considered as the heart of a radar system, play an important role in their development. VEDs and radar systems supplement and promote each other. Some new trends in VEDs have been observed with advancements in the simulation tools for designing VEDs, new materials, new fabrication techniques. Recently, the performance of VEDs has greatly improved. In addition, new devices have been invented, which have laid the foundation for the developments of radar detection technology. This study introduces the recent development trends and research results of VEDs from microwave and millimeter wave devices and power modules, integrated VEDs, terahertz VEDs, and high power VEDs.

  20. 77 FR 60720 - Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data...

    2012-10-04

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data Processing Devices, and Tablet Computers... communication devices, portable music and data processing devices, and tablet computers, imported by Apple Inc...

  1. 77 FR 70464 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    2012-11-26

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-794] Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... wireless communication devices, portable music and data processing devices, and tablet computers, by reason...

  2. Organic electronic devices using phthalimide compounds

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  3. Plasmonically enhanced hot electron based photovoltaic device.

    Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K

    2013-03-25

    Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.

  4. Influence of boundary effects on electron beam dose distribution formation in multilayer targets

    Kaluska, I.; Zimek, Z.; Lazurik, V.T.; Lazurik, V.M.; Popov, G.F.; Rogov, Y.V.

    2010-01-01

    Computational dosimetry play a significant role in an industrial radiation processing at dose measurements in the product irradiated with electron beams (EB), X-ray and gamma ray from radionuclide sources. Accurate and validated programs for absorbed dose calculations are required for computational dosimetry. The program ModeStEB (modelling of EB processing in a three-dimensional (3D) multilayer flat targets) was designed specially for simulation and optimization of industrial radiation processing, calculation of the 3D absorbed dose distribution within multilayer packages. The package is irradiated with scanned EB on an industrial radiation facility that is based on the pulsed or continuous type of electron accelerators in the electron energy range from 0.1 to 25 MeV. Simulation of EB dose distributions in the multilayer targets was accomplished using the Monte Carlo (MC) method. Experimental verification of MC simulation prediction for EB dose distribution formation in a stack of plates interleaved with polyvinylchloride (PVC) dosimetric films (DF), within a packing box, and irradiated with a scanned 10 MeV EB on a moving conveyer is discussed. (authors)

  5. Remote Monitoring of Cardiac Implantable Electronic Devices.

    Cheung, Christopher C; Deyell, Marc W

    2018-01-08

    Over the past decade, technological advancements have transformed the delivery of care for arrhythmia patients. From early transtelephonic monitoring to new devices capable of wireless and cellular transmission, remote monitoring has revolutionized device care. In this article, we review the current evolution and evidence for remote monitoring in patients with cardiac implantable electronic devices. From passive transmission of device diagnostics, to active transmission of patient- and device-triggered alerts, remote monitoring can shorten the time to diagnosis and treatment. Studies have shown that remote monitoring can reduce hospitalization and emergency room visits, and improve survival. Remote monitoring can also reduce the health care costs, while providing increased access to patients living in rural or marginalized communities. Unfortunately, as many as two-thirds of patients with remote monitoring-capable devices do not use, or are not offered, this feature. Current guidelines recommend remote monitoring and interrogation, combined with annual in-person evaluation in all cardiac device patients. Remote monitoring should be considered in all eligible device patients and should be considered standard of care. Copyright © 2018 Canadian Cardiovascular Society. Published by Elsevier Inc. All rights reserved.

  6. A device for electron gun emittance measurement

    Aune, B.; Corveller, P.; Jablonka, M.; Joly, J.M.

    1985-05-01

    In order to improve the final emittance of the beam delivered by the ALS electron linac a new gun is going to be installed. To measure its emittance and evaluate the contribution of different factors to emittance growth we have developed an emittance measurement device. We describe the experimental and mathematical procedure we have followed, and give some results of measurements

  7. Shelf life of electronic/electrical devices

    Polanco, S.; Behera, A.K.

    1993-01-01

    This paper discusses inconsistencies which exist between various industry practices regarding the determination of shelf life for electrical and electronic components. New methodologies developed to evaluate the shelf life of electrical and electronic components are described and numerous tests performed at Commonwealth Edison Company's Central Receiving Inspection and Testing (CRIT) Facility are presented. Based upon testing and analysis using the Arrhenius methodology and typical materials used in the manufacturing of electrical and electronic components, shelf life of these devices was determined to be indefinite. Various recommendations to achieve an indefinite. Various recommendations to achieve an indefinite shelf life are presented to ultimately reduce inventory and operating costs at nuclear power plants

  8. High performance flexible electronics for biomedical devices.

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

  9. Nitrogen plasma-treated multilayer graphene-based field effect transistor fabrication and electronic characteristics

    Su, Wei-Jhih; Chang, Hsuan-Chen; Honda, Shin-ichi; Lin, Pao-Hung; Huang, Ying-Sheng; Lee, Kuei-Yi

    2017-08-01

    Chemical doping with hetero-atoms is an effective method used to change the characteristics of materials. Nitrogen doping technology plays a critical role in regulating the electronic properties of graphene. Nitrogen plasma treatment was used in this work to dope nitrogen atoms to modulate multilayer graphene electrical properties. The measured I-V multilayer graphene-base field-effect transistor characteristics (GFETs) showed a V-shaped transfer curve with the hole and electron region separated from the measured current-voltage (I-V) minimum. GFETs fabricated with multilayer graphene from chemical vapor deposition (CVD) exhibited p-type behavior because of oxygen adsorption. After using different nitrogen plasma treatment times, the minimum in I-V characteristic shifted into the negative gate voltage region with increased nitrogen concentration and the GFET channel became an n-type semiconductor. GFETs could be easily fabricated using this method with potential for various applications. The GFET transfer characteristics could be tuned precisely by adjusting the nitrogen plasma treatment time.

  10. Electronic medical devices: a primer for pathologists.

    Weitzman, James B

    2003-07-01

    Electronic medical devices (EMDs) with downloadable memories, such as implantable cardiac pacemakers, defibrillators, drug pumps, insulin pumps, and glucose monitors, are now an integral part of routine medical practice in the United States, and functional organ replacements, such as the artificial heart, pancreas, and retina, will most likely become commonplace in the near future. Often, EMDs end up in the hands of the pathologist as a surgical specimen or at autopsy. No established guidelines for systematic examination and reporting or comprehensive reviews of EMDs currently exist for the pathologist. To provide pathologists with a general overview of EMDs, including a brief history; epidemiology; essential technical aspects, indications, contraindications, and complications of selected devices; potential applications in pathology; relevant government regulations; and suggested examination and reporting guidelines. Articles indexed on PubMed of the National Library of Medicine, various medical and history of medicine textbooks, US Food and Drug Administration publications and product information, and specifications provided by device manufacturers. Studies were selected on the basis of relevance to the study objectives. Descriptive data were selected by the author. Suggested examination and reporting guidelines for EMDs received as surgical specimens and retrieved at autopsy. Electronic medical devices received as surgical specimens and retrieved at autopsy are increasing in number and level of sophistication. They should be systematically examined and reported, should have electronic memories downloaded when indicated, will help pathologists answer more questions with greater certainty, and should become an integral part of the formal knowledge base, research focus, training, and practice of pathology.

  11. Novel Luminescent Multilayer Films Containing π-Conjugated Anionic Polymer with Electronic Microenvironment

    Tianlei Wang

    2016-09-01

    Full Text Available Layered double hydroxides (LDHs, luminescent π-conjugated anionic polymer and montmorillonite (MMT were orderly assembled into luminescent multilayer films via layer-by-layer self-assembly method. The electronic microenvironment (EME, the structure of which is like a traditional capacitor, can be constructed by exfoliated LDHs or MMT nanosheets. In addition, the rigid inorganic laminated configuration can offer stable surroundings between the interlayers. As a result, we conclude that EME can extend the luminescent lifespans of multilayer films substantially, due to affecting relaxation times of π-conjugated anionic polymer. Consequently, because of the remarkable impact on better photoemission behaviors of luminescent π-conjugated anionic polymer, EME assembled by LDHs or MMT nanosheets have had high hopes attached to them. They are expected to have the potential for designing, constructing, and investigating novel light-emitting thin films.

  12. High resolution electron microscopy study of as-prepared and annealed tungsten-carbon multilayers

    Nguyen, T.D.; Gronsky, R.; Kortright, J.B.

    1988-12-01

    A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500/degree/C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period. As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions. 12 refs., 4 figs., 1 tab

  13. Reading from electronic devices versus hardcopy text.

    Hue, Jennifer E; Rosenfield, Mark; Saá, Gianinna

    2014-01-01

    The use of electronic reading devices has increased dramatically. However, some individuals report increased visual symptoms when reading from electronic screens. This investigation compared reading from two electronic devices (Amazon Kindle or Apple Ipod) versus hardcopy text in two groups of 20 subjects. Subjects performed a 20 min reading task for each condition. Both the accommodative response and reading rate were monitored during the trial. Immediately post-task, subjects completed a questionnaire concerning the ocular symptoms experienced during the task. In comparing the Kindle with hardcopy, no significant difference in the total symptom score was observed, although the mean score for the symptoms of tired eyes and eye discomfort was significantly higher with the Kindle. No significant differences in reading rate were found. When comparing the Ipod with hardcopy, no significant differences in symptom scores were found. The mean reading rate with the Ipod was significantly slower than for hardcopy while the mean lag of accommodation was significantly larger for the Ipod. Given the significant increase in symptoms with the Kindle, and larger lag of accommodation and reduced reading rate with the Ipod, one may conclude that reading from electronic devices is not equivalent to hardcopy.

  14. Multilayer mirror based monitors for impurity controls in large fusion reactor type devices

    Regan, S.P.; May, M.J.; Soukhanovskii, V.; Finkenthal, M.; Moos, H.W.

    1995-01-01

    Multilayer Mirror (MLM) based monitors are compact, high throughput diagnostics capable of extracting XUV emissions (the wavelength range including the soft-x-ray and the extreme ultraviolet, 10 angstrom to 304 angstrom) of impurities from the harsh environment of large fusion reactor type devices. For several years the Plasma Spectroscopy Group at Johns Hopkins University has investigated the application of MLM based XUV spectroscopic diagnostics for magnetically confined fusion plasmas. MLM based monitors have been constructed for and extensively used on DIII-D, Alcator C-mod, TEXT, Phaedrus-T, and CDX-U tokamaks to study the impurity behavior of elements ranging from He to Mo. On ITER MLM based devices would be used to monitor the spectral line emissions from Li I-like to F I-like charge states of Fe, Cr, and Ni, as well as extractors for the bands of emissions from high Z elements such as Mo or W for impurity controls of the fusion plasma. In addition to monitoring the impurity emissions from the main plasma, MLM based devices can also be adapted for radiation measurements of low Z elements in the divertor. The concepts and designs of these MLM based monitors for impurity controls in ITER will be presented. The results of neutron irradiation experiments of the MLMs performed in the Los Alamos Spallation Radiation Effects Facility (LASREF) at the Los Alamos National Laboratory will also be discussed. These preliminary neutron exposure studies show that the dispersive and reflective qualities of the MLMs were not affected in a significant manner

  15. A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

    Yu, Yue; Wu, Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn; He, Lin; Jiao, Bo; Hou, Xun

    2015-08-31

    We developed a solvent/non-solvent system to fabricate the multilayer organic light-emitting devices (OLEDs) based on poly(N-vinylcarbazole) (PVK) by solution-process. This solvent system consists of both the solvent and non-solvent of PVK, in which fluorescent small molecules could be fully dissolved and directly spin-coated on top of the PVK layer; it could effectively avoid the redissolution of PVK during the spin-coating process of small molecules emitting layer. In the further investigation of this system, we also demonstrated the three-component solvent system, and found out that the third component, a less volatile solvent of PVK, was crucial for preparing a smoother interface between PVK and emitting layer. Compared with OLEDs through the vacuum deposition, the devices fabricated by solution-process from the solvent/non-solvent system showed comparable efficiency, which indicate that the solvent/non-solvent system can be used as an alternative process to prepare the polymer and small molecule multilayer devices through all-solution-process. - Highlights: • We fabricate the multilayer OLEDs by solution-process using a novel system. • We develop a solvent/non-solvent system of polymer (PVK) to avoid redissolution. • Small molecules could be fully dissolved and directly spin-coated on PVK layer. • The devices fabricated by the system and vacuum deposition show comparable efficiency.

  16. Electronic voltage and current transformers testing device.

    Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

    2012-01-01

    A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

  17. Multilayer Integrated Film Bulk Acoustic Resonators

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  18. Interfacial electronic charge transfer and density of states in short period Cu/Cr multilayers; TOPICAL

    Barbee, T W; Bello, A F; Klepeis, J E; Van Buuren, T

    1999-01-01

    Nanometer period metallic multilayers are ideal structures to investigate electronic phenomena at interfaces between metal films since interfacial atoms comprise a large atomic fraction of the samples. The Cu/Cr binary pair is especially suited to study the interfaces in metals since these elements are mutually insoluble, thus eliminating mixing effects and compound formation and the lattice mismatch is very small. This allows the fabrication of high structural quality Cu/Cr multilayers that have a structure which can be approximated in calculations based on idealized atomic arrangements. The electronic structure of the Cu and the Cr layers in several samples of thin Cu/Cr multilayers were studied using x-ray absorption spectroscopy (XAS). Total electron yield was measured and used to study the white lines at the Cu L(sub 2) and L(sub 3) absorption edges. The white lines at the Cu absorption edges are strongly related to the unoccupied d-orbitals and are used to calculate the amount of charge transfer between the Cr and Cu atoms in interfaces. Analysis of the Cu white lines show a charge transfer of 0.026 electrons/interfacial Cu atom to the interfacial Cr atoms. In the Cu XAS spectra we also observe a van Hove singularity between the L(sub 2) and L(sub 3) absorption edges as expected from the structural analysis. The absorption spectra are compared to partial density of states obtained from a full-potential linear muffin-tin orbital calculation. The calculations support the presence of charge transfer and indicate that it is localized to the first two interfacial layers in both Cu and Cr

  19. Nanomechanical characterization of multilayered thin film structures for digital micromirror devices

    Wei Guohua; Bhushan, Bharat; Joshua Jacobs, S.

    2004-01-01

    The digital micromirror device (DMD), used for digital projection displays, comprises a surface-micromachined array of up to 2.07 million aluminum micromirrors (14 μm square and 15 μm pitch), which switch forward and backward thousands of times per second using electrostatic attraction. The nanomechanical properties of the thin-film structures used are important to the performance of the DMD. In this paper, the nanomechanical characterization of the single and multilayered thin film structures, which are of interest in DMDs, is carried out. The hardness, Young's modulus and scratch resistance of TiN/Si, SiO 2 /Si, Al alloy/Si, TiN/Al alloy/Si and SiO 2 /TiN/Al alloy/Si thin-film structures were measured using nanoindentation and nanoscratch techniques, respectively. The residual (internal) stresses developed during the thin film growth were estimated by measuring the radius of curvature of the sample before and after deposition. To better understand the nanomechanical properties of these thin film materials, the surface and interface analysis of the samples were conducted using X-ray photoelectron spectroscopy. The nanomechanical properties of these materials are analyzed and the impact of these properties on micromirror performance is discussed

  20. Ocular Tolerance of Contemporary Electronic Display Devices.

    Clark, Andrew J; Yang, Paul; Khaderi, Khizer R; Moshfeghi, Andrew A

    2018-05-01

    Electronic displays have become an integral part of life in the developed world since the revolution of mobile computing a decade ago. With the release of multiple consumer-grade virtual reality (VR) and augmented reality (AR) products in the past 2 years utilizing head-mounted displays (HMDs), as well as the development of low-cost, smartphone-based HMDs, the ability to intimately interact with electronic screens is greater than ever. VR/AR HMDs also place the display at much closer ocular proximity than traditional electronic devices while also isolating the user from the ambient environment to create a "closed" system between the user's eyes and the display. Whether the increased interaction with these devices places the user's retina at higher risk of damage is currently unclear. Herein, the authors review the discovery of photochemical damage of the retina from visible light as well as summarize relevant clinical and preclinical data regarding the influence of modern display devices on retinal health. Multiple preclinical studies have been performed with modern light-emitting diode technology demonstrating damage to the retina at modest exposure levels, particularly from blue-light wavelengths. Unfortunately, high-quality in-human studies are lacking, and the small clinical investigations performed to date have failed to keep pace with the rapid evolutions in display technology. Clinical investigations assessing the effect of HMDs on human retinal function are also yet to be performed. From the available data, modern consumer electronic displays do not appear to pose any acute risk to vision with average use; however, future studies with well-defined clinical outcomes and illuminance metrics are needed to better understand the long-term risks of cumulative exposure to electronic displays in general and with "closed" VR/AR HMDs in particular. [Ophthalmic Surg Lasers Imaging Retina. 2018;49:346-354.]. Copyright 2018, SLACK Incorporated.

  1. Guide to state-of-the-art electron devices

    2013-01-01

    Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists...

  2. Influence of Fe nanoparticles diameters on the structure and electron emission studies of carbon nanotubes and multilayer graphene

    Sharma, Himani; Shukla, A.K.; Vankar, V.D.

    2013-01-01

    In this paper we report the effect of Fe film thickness on the growth, structure and electron emission characteristics of carbon nanotubes (CNTs) and multilayer graphene deposited on Si substrate. It is observed that the number of graphitic shells in carbon nanostructures (CNs) varies with the thickness of the catalyst depending on the average size of nanoparticles. Further, the Fe nanoparticles do not catalyze beyond a particular size of nanoclusters leading to the formation of multilayer graphene structure, instead of carbon nanotubes (CNTs). It is observed that the crystallinity of CNs enhances upon increasing the catalyst thickness. Multilayer graphene structures show improved crystallinity in comparison to CNTs as graphitic to defect mode intensity ratio (I D /I G ) decreases from 1.2 to 0.8. However, I 2D /I G value for multilayer graphene is found to be 1.1 confirming the presence of at least 10 layers of graphene in these samples. CNTs with smaller diameter show better electron emission properties with enhancement factor (γ C = 2.8 × 10 3 ) in comparison to multilayer graphene structure (γ C = 1.5 × 10 3 ). The better emission characteristics in CNTs are explained due to combination of electrons from edges as well as centers in comparison to the multilayer graphene. Highlights: ► Graphitic shells in CNTs and graphene depend on the size of Fe nanoparticles. ► The diameter of nanoparticles decides the morphology of CNTs and graphene. ► Multilayer graphene structures show improved crystallinity in comparison to CNTs. ► Multilayer graphene (MLG) has the γ C factor of 1.5 × 10 3 and CNTs has 2.8 × 10 3 . ► The nonlinearity in MLG may occur through change in work function.

  3. Mechanical and thermal properties of commercial multilayer PET/PP film irradiated with electron-beam

    Ortiz, Angel V.; Nogueira, Beatriz R.; Oliveira, Vitor M.; Moura, Esperidiana A.B.

    2009-01-01

    The effects of electron-beam irradiation on mechanical and thermal properties, for one commercial flexible food packaging multilayer structure, were studied. The laminated poly(ethylene terephthalate) (PET)/ polypropylene (PP) structure was irradiated up to 60 kGy, using a 1.5 MeV electron beam accelerator, at room temperature in the presence of air. Mechanical properties showed significant changes (p < 0.05). In addition, the DSC analysis, after treatment, showed that the fusion enthalpy and crystallinity of the PET/PP structure components presented significant changes (p < 0.05) with the electron-beam radiation doses applied. It was observed an increase in PP crystallinity while the PET crystallinity decreases. Such decrease in PET crystallinity indicates the predominance of a cross-linking process on the irradiated PET layer; responsible for the increase in some mechanical properties of the studied film. (author)

  4. Electronic equipment and software for device 'FAZA'

    Avdeev, S.P.; Karnaukhov, V.A.; Kuznetsov, V.D.; Petrov, L.A.; Oeschler, H.; Lips, F.; Bart, R.

    1992-01-01

    Electronic equipment and software for the device FAZA are described. The device, designed for studying the nuclear multifragmentation process, consists of 5 time-of-flight telescopes, a position-sensitive avalanche chamber and 58 PM tubes. The time resolution of the time-of-flight telescopes is 0.5 ns, which allows a velocity resolution of 1.5%. The spatial resolution of the large avalanche counter is 4 mm, which allows angular resolution of 1 deg. Analogue signals from each PM tube come to two ADCs, to which strobes are supplied with a 400 ns shift. It allows codes corresponding to Cherenkov radiation and deexcitation of CsJ(Tl) to be distinguished in a two-dimensional plot. 8 refs.; 2 figs

  5. Advanced Materials and Devices for Bioresorbable Electronics.

    Kang, Seung-Kyun; Koo, Jahyun; Lee, Yoon Kyeung; Rogers, John A

    2018-05-15

    Recent advances in materials chemistry establish the foundations for unusual classes of electronic systems, characterized by their ability to fully or partially dissolve, disintegrate, or otherwise physically or chemically decompose in a controlled fashion after some defined period of stable operation. Such types of "transient" technologies may enable consumer gadgets that minimize waste streams associated with disposal, implantable sensors that disappear harmlessly in the body, and hardware-secure platforms that prevent unwanted recovery of sensitive data. This second area of opportunity, sometimes referred to as bioresorbable electronics, is of particular interest due to its ability to provide diagnostic or therapeutic function in a manner that can enhance or monitor transient biological processes, such as wound healing, while bypassing risks associated with extended device load on the body or with secondary surgical procedures for removal. Early chemistry research established sets of bioresorbable materials for substrates, encapsulation layers, and dielectrics, along with several options in organic and bio-organic semiconductors. The subsequent realization that nanoscale forms of device-grade monocrystalline silicon, such as silicon nanomembranes (m-Si NMs, or Si NMs) undergo hydrolysis in biofluids to yield biocompatible byproducts over biologically relevant time scales advanced the field by providing immediate routes to high performance operation and versatile, sophisticated levels of function. When combined with bioresorbable conductors, dielectrics, substrates, and encapsulation layers, Si NMs provide the basis for a broad, general class of bioresorbable electronics. Other properties of Si, such as its piezoresistivity and photovoltaic properties, allow other types of bioresorbable devices such as solar cells, strain gauges, pH sensors, and photodetectors. The most advanced bioresorbable devices now exist as complete systems with successful demonstrations of

  6. Multiparametric electronic devices based on nuclear tracks

    Fink, D. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany)], E-mail: FINK@HMI.DE; Saad, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Basic Science Department, Faculty of Science, Al Balqa University, Salt (Jordan); Dhamodaran, S. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Chandra, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Fahrner, W.R. [Chair of Electronic Devices, Institute of Electrotechnique, Fernuniversitaet, Hagen (Germany); Hoppe, K. [South Westfalia University of Applied Sciences, Hagen (Germany); Chadderton, L.T. [Institute of Advanced Studies, ANU Canberra, GPO Box 4, ACT (Australia)

    2008-08-15

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r{sub ROI} around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1{mu}m leading to nanometric TEMPOS structures.

  7. Multiparametric electronic devices based on nuclear tracks

    Fink, D.; Saad, A.; Dhamodaran, S.; Chandra, A.; Fahrner, W.R.; Hoppe, K.; Chadderton, L.T.

    2008-01-01

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r ROI around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1μm leading to nanometric TEMPOS structures

  8. 14 CFR 91.21 - Portable electronic devices.

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic device...

  9. 46 CFR 28.260 - Electronic position fixing devices.

    2010-10-01

    ... Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in length must be equipped with an electronic position fixing device capable of providing accurate fixes for the... 46 Shipping 1 2010-10-01 2010-10-01 false Electronic position fixing devices. 28.260 Section 28...

  10. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  11. Non-fullerene electron acceptors for organic photovoltaic devices

    Jenekhe, Samson A.; Li, Haiyan; Earmme, Taeshik; Ren, Guoqiang

    2017-11-07

    Non-fullerene electron acceptors for highly efficient organic photovoltaic devices are described. The non-fullerene electron acceptors have an extended, rigid, .pi.-conjugated electron-deficient framework that can facilitate exciton and charge derealization. The non-fullerene electron acceptors can physically mix with a donor polymer and facilitate improved electron transport. The non-fullerene electron acceptors can be incorporated into organic electronic devices, such as photovoltaic cells.

  12. Oxide bipolar electronics: materials, devices and circuits

    Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; Von Wenckstern, Holger

    2016-01-01

    We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo 2 O 4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization. (topical review)

  13. Reflection of femtosecond pulses from soft X-ray free-electron laser by periodical multilayers

    Ksenzov, D.; Grigorian, S.; Pietsch, U. [Faculty of Physics, University of Siegen (Germany); Hendel, S.; Bienert, F.; Sacher, M.D.; Heinzmann, U. [Faculty of Physics, University of Bielefeld (Germany)

    2009-08-15

    Recent experiments on a soft X-ray free-electron laser (FEL) source (FLASH in Hamburg) have shown that multilayers (MLs) can be used as optical elements for highly intense X-ray irradiation. An effort to find most appropriate MLs has to consider the femtosecond time structure and the particular photon energy of the FEL. In this paper we have analysed the time response of 'low absorbing' MLs (e.g. such as La/B{sub 4}C) as a function of the number of periods. Interaction of a pulse train of Gaussian shaped sub-pulses using a realistic ML grown by electron-beam evaporation technique has been analysed in the soft-X-ray range. The structural parameters of the MLs were obtained by reflectivity measurements at BESSY II and subsequent profile fittings. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  14. Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

    Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

    2018-06-01

    In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

  15. Characterization of electron microscopes with binary pseudo-random multilayer test samples

    Yashchuk, Valeriy V.; Conley, Raymond; Anderson, Erik H.; Barber, Samuel K.; Bouet, Nathalie; McKinney, Wayne R.; Takacs, Peter Z.; Voronov, Dmitriy L.

    2011-09-01

    Verification of the reliability of metrology data from high quality X-ray optics requires that adequate methods for test and calibration of the instruments be developed. For such verification for optical surface profilometers in the spatial frequency domain, a modulation transfer function (MTF) calibration method based on binary pseudo-random (BPR) gratings and arrays has been suggested [1,2] and proven to be an effective calibration method for a number of interferometric microscopes, a phase shifting Fizeau interferometer, and a scatterometer [5]. Here we describe the details of development of binary pseudo-random multilayer (BPRML) test samples suitable for characterization of scanning (SEM) and transmission (TEM) electron microscopes. We discuss the results of TEM measurements with the BPRML test samples fabricated from a WiSi 2/Si multilayer coating with pseudo-randomly distributed layers. In particular, we demonstrate that significant information about the metrological reliability of the TEM measurements can be extracted even when the fundamental frequency of the BPRML sample is smaller than the Nyquist frequency of the measurements. The measurements demonstrate a number of problems related to the interpretation of the SEM and TEM data. Note that similar BPRML test samples can be used to characterize X-ray microscopes. Corresponding work with X-ray microscopes is in progress.

  16. Characterization of electron microscopes with binary pseudo-random multilayer test samples

    Yashchuk, Valeriy V.; Conley, Raymond; Anderson, Erik H.; Barber, Samuel K.; Bouet, Nathalie; McKinney, Wayne R.; Takacs, Peter Z.; Voronov, Dmitriy L.

    2011-01-01

    Verification of the reliability of metrology data from high quality X-ray optics requires that adequate methods for test and calibration of the instruments be developed. For such verification for optical surface profilometers in the spatial frequency domain, a modulation transfer function (MTF) calibration method based on binary pseudo-random (BPR) gratings and arrays has been suggested and proven to be an effective calibration method for a number of interferometric microscopes, a phase shifting Fizeau interferometer, and a scatterometer [5]. Here we describe the details of development of binary pseudo-random multilayer (BPRML) test samples suitable for characterization of scanning (SEM) and transmission (TEM) electron microscopes. We discuss the results of TEM measurements with the BPRML test samples fabricated from a WiSi 2 /Si multilayer coating with pseudo-randomly distributed layers. In particular, we demonstrate that significant information about the metrological reliability of the TEM measurements can be extracted even when the fundamental frequency of the BPRML sample is smaller than the Nyquist frequency of the measurements. The measurements demonstrate a number of problems related to the interpretation of the SEM and TEM data. Note that similar BPRML test samples can be used to characterize X-ray microscopes. Corresponding work with X-ray microscopes is in progress.

  17. Robust Optimal Design of Quantum Electronic Devices

    Ociel Morales

    2018-01-01

    Full Text Available We consider the optimal design of a sequence of quantum barriers, in order to manufacture an electronic device at the nanoscale such that the dependence of its transmission coefficient on the bias voltage is linear. The technique presented here is easily adaptable to other response characteristics. There are two distinguishing features of our approach. First, the transmission coefficient is determined using a semiclassical approximation, so we can explicitly compute the gradient of the objective function. Second, in contrast with earlier treatments, manufacturing uncertainties are incorporated in the model through random variables; the optimal design problem is formulated in a probabilistic setting and then solved using a stochastic collocation method. As a measure of robustness, a weighted sum of the expectation and the variance of a least-squares performance metric is considered. Several simulations illustrate the proposed technique, which shows an improvement in accuracy over 69% with respect to brute-force, Monte-Carlo-based methods.

  18. 76 FR 45860 - In the Matter of Certain Electronic Devices, Including Wireless Communication Devices, Portable...

    2011-08-01

    ..., Including Wireless Communication Devices, Portable Music and Data Processing Devices, and Tablet Computers... electronic devices, including wireless communication devices, portable music and data processing devices, and...''). The complaint further alleges that an industry in the United States exists or is in the process of...

  19. A Multilayer Secure Biomedical Data Management System for Remotely Managing a Very Large Number of Diverse Personal Healthcare Devices

    KeeHyun Park

    2015-01-01

    Full Text Available In this paper, a multilayer secure biomedical data management system for managing a very large number of diverse personal health devices is proposed. The system has the following characteristics: the system supports international standard communication protocols to achieve interoperability. The system is integrated in the sense that both a PHD communication system and a remote PHD management system work together as a single system. Finally, the system proposed in this paper provides user/message authentication processes to securely transmit biomedical data measured by PHDs based on the concept of a biomedical signature. Some experiments, including the stress test, have been conducted to show that the system proposed/constructed in this study performs very well even when a very large number of PHDs are used. For a stress test, up to 1,200 threads are made to represent the same number of PHD agents. The loss ratio of the ISO/IEEE 11073 messages in the normal system is as high as 14% when 1,200 PHD agents are connected. On the other hand, no message loss occurs in the multilayered system proposed in this study, which demonstrates the superiority of the multilayered system to the normal system with regard to heavy traffic.

  20. Electron energy deposition in a multilayered carbon--uranium--carbon configuration and in semi-infinite uranium

    Lockwood, G.J.; Miller, G.H.; Halbleib, J.A. Sr.

    1977-10-01

    Absolute measurements of electron energy deposition profiles are reported here for electrons incident on the multilayer configuration of carbon-uranium-carbon. These measurements were for normally incident source electrons at an energy of 1.0 MeV. To complement these measurements, electron energy deposition profiles were also obtained for electrons incident on semi-infinite uranium as a function of energy and angle of incidence. The results are compared with the predictions of a coupled electron/photon Monte Carlo transport model. In general, the agreement between theory and experiment is good. This work was in support of the Reactor Safety Research Equation-of-State Program

  1. Self-assembled graphene/azo polyelectrolyte multilayer film and its application in electrochemical energy storage device.

    Wang, Dongrui; Wang, Xiaogong

    2011-03-01

    Graphene/azo polyelectrolyte multilayer films were fabricated through electrostatic layer-by-layer (LbL) self-assembly, and their performance as electrochemical capacitor electrode was investigated. Cationic azo polyelectrolyte (QP4VP-co-PCN) was synthesized through radical polymerization, postpolymerization azo coupling reaction, and quaternization. Negatively charged graphene nanosheets were prepared by a chemically modified method. The LbL films were obtained by alternately dipping a piece of the pretreated substrates in the QP4VP-co-PCN and nanosheet solutions. The processes were repeated until the films with required numbers of bilayers were obtained. The self-assembly and multilayer surface morphology were characterized by UV-vis spectroscopy, AFM, SEM, and TEM. The performance of the LbL films as electrochemical capacitor electrode was estimated using cyclic voltammetry. Results show that the graphene nanosheets are densely packed in the multilayers and form random graphene network. The azo polyelectrolyte cohesively interacts with the nanosheets in the multilayer structure, which prevents agglomeration of graphene nanosheets. The sheet resistance of the LbL films decreases with the increase of the layer numbers and reaches the stationary value of 1.0 × 10(6) Ω/square for the film with 15 bilayers. At a scanning rate of 50 mV/s, the LbL film with 9 bilayers shows a gravimetric specific capacitance of 49 F/g in 1.0 M Na(2)SO(4) solution. The LbL films developed in this work could be a promising type of the electrode materials for electric energy storage devices.

  2. Device for the radiation centering at electron emitters

    Panzer, S.; Ardenne, T. von; Jessat, K.; Bahr, G.

    1985-01-01

    The invention has been directed at a device for a simplified and reliable centering of electron beams at electron emitters in particular for welding and thermal surface modifications. The electron beam has been focussed relatively to an electron-optical lens. A movable masked electron detector has been arranged at the electron beam deflection plane. The electron detector is connected with an electronic data evaluation equipment

  3. Economic analysis of evolution/devolution of electronic devices functionality

    Esipov A. S.

    2017-12-01

    Full Text Available the researcher of this article has presented the analysis of evolution/devolution of electronic devices functionality as well as the analysis of the current situation at the computers and mobile devices market, and some thoughts about new products. Is a newer device better? Are corporations producing really new devices or they are only the improvement of old ones.

  4. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  5. Electronic Payments using Mobile Communication Devices

    Waaij, B.D. van der; Siljee, B.I.J.; Broekhuijsen, B.J.; Ponsioen, C.; Maas, A.; Aten, R.M.; Hoepman, J.H.; Loon, J.H. van; Smit, M.

    2009-01-01

    A method of making a payment uses a first mobile communication device (1) and a second mobile communication device (2), each mobile communication device being provided with a respective near field communication unit (11, 21) and at least one of the mobile communication devices being provided with an

  6. [Electronic Device for Retinal and Iris Imaging].

    Drahanský, M; Kolář, R; Mňuk, T

    This paper describes design and construction of a new device for automatic capturing of eye retina and iris. This device has two possible ways of utilization - either for biometric purposes (persons recognition on the base of their eye characteristics) or for medical purposes as supporting diagnostic device. eye retina, eye iris, device, acquisition, image.

  7. Application of high power microwave vacuum electron devices

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  8. MEMS/Electronic Device Design and Characterization Facility

    Federal Laboratory Consortium — This facility allows DoD to design and characterize state-of-the-art microelectromechanical systems (MEMS) and electronic devices. Device designers develop their own...

  9. Design of a wideband multilayer grating spectrometer for the study of electronic structure of thin-film CIS solar cells

    Imazono, Takashi; Koike, Masato; Kuramoto, Satoshi; Nagano, Tetsuya; Koeda, Masaru; Moriya, Naoji

    2014-01-01

    A soft x-ray emission spectrometer equipped with a wideband Ni/C multilayer-coated laminar-type varied-line-spacing holographic grating is designed to analyze the electronic structure in thin-film copper indium selenide (CIS) solar cells nondestructively by soft x-ray emission spectroscopy. The spectrometer equipped with the multilayer grating thus designed allows us to detect the L emission lines of Cu, In, and Se simultaneously from a CIS absorber layer in the 1–3.5 keV range at a constant angle of incidence. (author)

  10. An open-source, programmable pneumatic setup for operation and automated control of single- and multi-layer microfluidic devices

    Kara Brower

    2018-04-01

    Full Text Available Microfluidic technologies have been used across diverse disciplines (e.g. high-throughput biological measurement, fluid physics, laboratory fluid manipulation but widespread adoption has been limited in part due to the lack of openly disseminated resources that enable non-specialist labs to make and operate their own devices. Here, we report the open-source build of a pneumatic setup capable of operating both single and multilayer (Quake-style microfluidic devices with programmable scripting automation. This setup can operate both simple and complex devices with 48 device valve control inputs and 18 sample inputs, with modular design for easy expansion, at a fraction of the cost of similar commercial solutions. We present a detailed step-by-step guide to building the pneumatic instrumentation, as well as instructions for custom device operation using our software, Geppetto, through an easy-to-use GUI for live on-chip valve actuation and a scripting system for experiment automation. We show robust valve actuation with near real-time software feedback and demonstrate use of the setup for high-throughput biochemical measurements on-chip. This open-source setup will enable specialists and novices alike to run microfluidic devices easily in their own laboratories. Keywords: Microfluidics, Pneumatics, Laboratory automation, Biochip, BioMEMs, Biohacking, Fluid handling, Micro total analysis systems (μTAS, Quake-style valves

  11. Multilayer epitaxial graphene grown on the (SiC 000 1-bar ) surface; structure and electronic properties

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Soukiassian, P; Martinotti, D

    2010-01-01

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar ) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  12. Quality assurance for electronic portal imaging devices

    Shalev, S.; Rajapakshe, R.; Gluhchev, G.; Luchka, K.

    1997-01-01

    Electronic portal imaging devices (EPIDS) are assuming an ever-increasing role in the verification of radiation treatment accuracy. They are used both in a passive capacity, for the determination of field displacement distributions (''setup errors''), and also in an active role whereby the patient setup is corrected on the basis of electronic portal images. In spite of their potential impact on the precision of patient treatment, there are few quality assurance procedures available, and most of the EPIDS in clinical use are subject, at best, to only perfunctory quality assurance. The goals of this work are (a) to develop an objective and reproducible test for EPID image quality on the factory floor and during installation of the EPID on site; (b) to provide the user with a simple and accurate tool for acceptance, commissioning, and routine quality control; and (c) to initiate regional, national and international collaboration in the implementation of standardized, objective, and automated quality assurance procedures. To this end we have developed an automated test in which a simple test object is imaged daily, and the spatial and contrast resolution of the EPID are automatically evaluated in terms of ''acceptable'', ''warning'' and ''stop'' criteria. Our experience over two years shows the test to be highly sensitive, reproducible, and inexpensive in time and effort. Inter-institutional trials are under way in Canada, US and Europe which indicate large variations in EPID image quality from one EPID to another, and from one center to another. We expect the new standardized quality assurance procedure to lead to improved, and consistent image quality, increased operator acceptance of the technology, and agreement on uniform standards by equipment suppliers and health care agencies. (author)

  13. Recent progress in power electronic devices

    Ikeda, Yasuhiko; Yatsuo, Tsutomu

    1987-02-01

    Recent progress and future trends of power semiconductor devices (especially with respect to motor speed control) were described. Conventional discrete devices such as thyristors, bipolar transistors, unipolar transistors and Bi-MOS devices were referenced to. Reference was also made to High Voltage ICs. There has been steady progress with each of these power devices in current carrying capability, voltage blocking capability and switching speed. The Bipolar-MOS integreated device and the High Voltage IC are particularly interesting because their abilities and performances are much enhanced by skillful combination with conventional discrete devices. However, no one device meets all the needs, and it will always be necessary to select the right device for a specific task. (11 figs, 35 refs)

  14. 3D Printed structural electronics: embedding and connecting electronic components into freeform electronic devices

    Maalderink, H.H.H.; Bruning, F.B.J.; Schipper, M.M.R. de; Werff, J.J.J. van der; Germs, W.W.C.; Remmers, J.J.C.; Meinders, E.R.

    2018-01-01

    The need for personalised and smart products drives the development of structural electronics with mass-customisation capability. A number of challenges need to be overcome in order to address the potential of complete free form manufacturing of electronic devices. One key challenge is the

  15. 3D Printed structural electronics : embedding and connecting electronic components into freeform electronic devices

    Maalderink, H.H.; Bruning, F.B.J.; de Schipper, M.R.; van der Werff, J.J.; Germs, W.C.; Remmers, J.J.C.; Meinders, E.R.

    2018-01-01

    The need for personalised and smart products drives the development of structural electronics with mass-customisation capability. A number of challenges need to be overcome in order to address the potential of complete free form manufacturing of electronic devices. One key challenge is the

  16. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  17. A multilayer concentric filter device to diminish clogging for separation of particles and microalgae based on size.

    Chen, Chih-Chung; Chen, Yu-An; Liu, Yi-Ju; Yao, Da-Jeng

    2014-04-21

    Microalgae species have great economic importance; they are a source of medicines, health foods, animal feeds, industrial pigments, cosmetic additives and biodiesel. Specific microalgae species collected from the environment must be isolated for examination and further application, but their varied size and culture conditions make their isolation using conventional methods, such as filtration, streaking plate and flow cytometric sorting, labour-intensive and costly. A separation device based on size is one of the most rapid, simple and inexpensive methods to separate microalgae, but this approach encounters major disadvantages of clogging and multiple filtration steps when the size of microalgae varies over a wide range. In this work, we propose a multilayer concentric filter device with varied pore size and is driven by a centrifugation force. The device, which includes multiple filter layers, was employed to separate a heterogeneous population of microparticles into several subpopulations by filtration in one step. A cross-flow to attenuate prospective clogging was generated by altering the rate of rotation instantly through the relative motion between the fluid and the filter according to the structural design of the device. Mixed microparticles of varied size were tested to demonstrate that clogging was significantly suppressed due to a highly efficient separation. Microalgae in a heterogeneous population collected from an environmental soil collection were separated and enriched into four subpopulations according to size in a one step filtration process. A microalgae sample contaminated with bacteria and insect eggs was also tested to prove the decontamination capability of the device.

  18. Electron beam directed energy device and methods of using same

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  19. Ion age transport: developing devices beyond electronics

    Demming, Anna

    2014-03-01

    There is more to current devices than conventional electronics. Increasingly research into the controlled movement of ions and molecules is enabling a range of new technologies. For example, as Weihua Guan, Sylvia Xin Li and Mark Reed at Yale University explain, 'It offers a unique opportunity to integrate wet ionics with dry electronics seamlessly'. In this issue they provide an overview of voltage-gated ion and molecule transport in engineered nanochannels. They cover the theory governing these systems and fabrication techniques, as well as applications, including biological and chemical analysis, and energy conversion [1]. Studying the movement of particles in nanochannels is not new. The transport of materials in rock pores led Klinkenberg to describe an analogy between diffusion and electrical conductivity in porous rocks back in 1951 [2]. And already in 1940, Harold Abramson and Manuel Gorin noted that 'When an electric current is applied across the living human skin, the skin may be considered to act like a system of pores through which transfer of substances like ragweed pollen extract may be achieved both by electrophoretic and by diffusion phenomena' [3]. Transport in living systems through pore structures on a much smaller scale has attracted a great deal of research in recent years as well. The selective transport of ions and small organic molecules across the cell membrane facilitates a number of functions including communication between cells, nerve conduction and signal transmission. Understanding these processes may benefit a wide range of potential applications such as selective separation, biochemical sensing, and controlled release and drug delivery processes. In Germany researchers have successfully demonstrated controlled ionic transport through nanopores functionalized with amine-terminated polymer brushes [4]. The polymer nanobrushes swell and shrink in response to changes in temperature, thus opening and closing the nanopore passage to ionic

  20. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones

    Assili, M; Haddad, S

    2013-01-01

    We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant. A crossover from a negative to a positive interlayer magnetoresistance is found to take place as the merging is approached. This sign change of the magnetoresistance can also result from a coupling between the Dirac valleys, which is enhanced as the magnetic field amplitude increases. Our results describe the behavior of the magnetotransport in the organic conductor α-(BEDT) 2 I 3 and in a stack of deformed graphene-like systems. The latter can be simulated by optical lattices or microwave experiments in which the merging of Dirac cones can be observed. (paper)

  1. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones

    Assili, M.; Haddad, S.

    2013-09-01

    We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant. A crossover from a negative to a positive interlayer magnetoresistance is found to take place as the merging is approached. This sign change of the magnetoresistance can also result from a coupling between the Dirac valleys, which is enhanced as the magnetic field amplitude increases. Our results describe the behavior of the magnetotransport in the organic conductor α-(BEDT)2I3 and in a stack of deformed graphene-like systems. The latter can be simulated by optical lattices or microwave experiments in which the merging of Dirac cones can be observed.

  2. Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones.

    Assili, M; Haddad, S

    2013-09-11

    We theoretically study the effect of the motion and the merging of Dirac cones on the interlayer magnetoresistance in multilayer graphene-like systems. This merging, which can be induced by a uniaxial strain, gives rise in a monolayer Dirac electron system to a topological transition from a semi-metallic phase to an insulating phase whereby Dirac points disappear. Based on a universal Hamiltonian, proposed to describe the motion and the merging of Dirac points in two-dimensional Dirac electron crystals, we calculate the interlayer conductivity of a stack of deformed graphene-like layers using the Kubo formula in the quantum limit where only the contribution of the n = 0 Landau level is relevant. A crossover from a negative to a positive interlayer magnetoresistance is found to take place as the merging is approached. This sign change of the magnetoresistance can also result from a coupling between the Dirac valleys, which is enhanced as the magnetic field amplitude increases. Our results describe the behavior of the magnetotransport in the organic conductor α-(BEDT)2I3 and in a stack of deformed graphene-like systems. The latter can be simulated by optical lattices or microwave experiments in which the merging of Dirac cones can be observed.

  3. Molecular electronics with single molecules in solid-state devices

    Moth-Poulsen, Kasper; Bjørnholm, Thomas

    2009-01-01

    The ultimate aim of molecular electronics is to understand and master single-molecule devices. Based on the latest results on electron transport in single molecules in solid-state devices, we focus here on new insights into the influence of metal electrodes on the energy spectrum of the molecule...

  4. Vacuum nanoelectronic devices novel electron sources and applications

    Evtukh, Anatoliy; Yilmazoglu, Oktay; Mimura, Hidenori; Pavlidis, Dimitris

    2015-01-01

    Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments.  This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. Unique coverage of quantum physical results for electron-field emission and novel electron sourc...

  5. Bio/Nano Electronic Devices and Sensors

    Jones, W. K

    2008-01-01

    ...) Cold cathode microwave generator and ceramic electron multiplier-ceramic multiplier using a novel secondary electron yield materials of MgO and CNT was demonstrated as well as cooling structures...

  6. Analog Multilayer Perceptron Circuit with On-chip Learning: Portable Electronic Nose

    Pan, Chih-Heng; Tang, Kea-Tiong

    2011-09-01

    This article presents an analog multilayer perceptron (MLP) neural network circuit with on-chip back propagation learning. This low power and small area analog MLP circuit is proposed to implement as a classifier in an electronic nose (E-nose). Comparing with the E-nose using microprocessor or FPGA as a classifier, the E-nose applying analog circuit as a classifier can be faster and much smaller, demonstrate greater power efficiency and be capable of developing a portable E-nose [1]. The system contains four inputs, four hidden neurons, and only one output neuron; this simple structure allows the circuit to have a smaller area and less power consumption. The circuit is fabricated using TSMC 0.18 μm 1P6M CMOS process with 1.8 V supply voltage. The area of this chip is 1.353×1.353 mm2 and the power consumption is 0.54 mW. Post-layout simulations show that the proposed analog MLP circuit can be successively trained to identify three kinds of fruit odors.

  7. A reference device for evaluating the thermal behavior of installed multilayered wall containing a phase change material

    Pagliolico, S.L.; Sassi, G.; Cascone, Y.; Bongiovanni, R.M.

    2015-01-01

    Highlights: • Thermal analysis of installed wallboards embedding phase change material layer. • Simple devices and real conditions for thermal analysis toward a standardization. • Scanning calorimetric measurements as initial condition for data regression. • Bias correction of calorimetric measurements data by installation factors. • Practical approach to identify a reliable thermal curve for capacitive wallboards. - Abstract: Thermal inertia of lightweight building envelopes can be improved including phase change materials in multilayered wallboards. The thermal modeling of buildings for design purposes needs a robust description of the thermal properties of installed phase change materials. A standard method would improve the thermal characterization of commercial products. The aim of the study is to develop a simple methodology to obtain reliable thermal data for phase change materials integrated in multilayered wallboards. The methodology modifies differential scanning calorimetry measurements on phase change material by installation factors to obtain the apparent specific heat vs. temperature for the wallboard layer embedding phase change material. Simple cubic cells were realized as reference devices to simulate a confined environment. A dynamic model of heat transfer was developed to simulate the thermal behavior of devices. Installation factors were calculated by regression of the monitored temperatures inside and outside the devices operating under real environmental conditions. The apparent specific heat of phase change material, measured by differential scanning calorimetry at different rates, resulted in a spread of curves vs. temperature. Mean curves were used as initial condition for regression. The mean calculation method did not significantly affect the installed resulted curve. A unique curve of apparent specific heat vs. temperature best fit data measured over a wide range of experimental devices and conditions. Good regression

  8. Automatic shadowing device for electron microscopy

    Bishop, F W; Bogitch, S

    1960-01-01

    For the past ten years in the laboratory of the Department of Nuclear Medicine and Radiation Biology at the University of California, and before that at Rochester, New York, every evaporation was done with the aid of an automatic shadowing device. For several months the automatic shadowing device has been available at the Atomic Bomb Casualty Commission (ABCC) Hiroshima, Japan with the modifications described. 1 reference.

  9. Transparent oxide electronics from materials to devices

    Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

    2012-01-01

    Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

  10. Scaling of ion implanted Si:P single electron devices

    Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

    2007-01-01

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

  11. Study of total ionization dose effects in electronic devices

    Nidhin, T.S.; Bhattacharyya, Anindya; Gour, Aditya; Behera, R.P.; Jayanthi, T.

    2018-01-01

    Radiation effects in electronic devices are a major challenge in the dependable application developments of nuclear power plant instrumentation and control systems. The main radiation effects are total ionization dose (TID) effects, displacement damage dose (DDD) effects and single event effects (SEE). In this study, we are concentrating on TID effects in electronic devices. The focus of the study is mainly on SRAM based field programmable gate arrays (FPGA) along with that the devices of our interest are voltage regulators, flash memory and optocoupler. The experiments are conducted by exposing the devices to gamma radiation in power off condition and the degradation in the performances are analysed

  12. Scaling of ion implanted Si:P single electron devices

    Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

    2007-06-13

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

  13. Thermal modeling and design of electronic systems and devices

    Wirtz, R.A.; Lehmann, G.L.

    1990-01-01

    The thermal control electronic devices, particularly those in complex systems with high heat flux density, continues to be of interest to engineers involved in system cooling design and analysis. This volume contains papers presented at the 1990 ASME Winter Annual Meeting in two K-16 sponsored sessions: Empirical Modeling of Heat Transfer in Complex Electronic Systems and Design and Modeling of Heat Transfer Devices in High-Density Electronics. The first group deals with understanding the heat transfer processes in these complex systems. The second group focuses on the use of analysis techniques and empirically determined data in predicting device and system operating performance

  14. Driver electronic device use in 2013.

    2015-04-01

    The percentage of drivers text-messaging or visibly manipulating : hand-held devices increased from 1.5 percent in : 2012 to 1.7 percent in 2013; however, this was not a statistically : significant increase. Driver hand-held cell phone : use decrease...

  15. Optical Biosensors: A Revolution Towards Quantum Nanoscale Electronics Device Fabrication

    D. Dey

    2011-01-01

    Full Text Available The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  16. Electronic processes in organic electronics bridging nanostructure, electronic states and device properties

    Kudo, Kazuhiro; Nakayama, Takashi; Ueno, Nobuo

    2015-01-01

    The book covers a variety of studies of organic semiconductors, from fundamental electronic states to device applications, including theoretical studies. Furthermore, innovative experimental techniques, e.g., ultrahigh sensitivity photoelectron spectroscopy, photoelectron yield spectroscopy, spin-resolved scanning tunneling microscopy (STM), and a material processing method with optical-vortex and polarization-vortex lasers, are introduced. As this book is intended to serve as a textbook for a graduate level course or as reference material for researchers in organic electronics and nanoscience from electronic states, fundamental science that is necessary to understand the research is described. It does not duplicate the books already written on organic electronics, but focuses mainly on electronic properties that arise from the nature of organic semiconductors (molecular solids). The new experimental methods introduced in this book are applicable to various materials (e.g., metals, inorganic and organic mater...

  17. On electron and pion identification using a multilayer perceptron in the transition radiation detector of the CBM experiment

    Akishina, T.P.; Denisova, O.Yu.; Ivanov, V.V.

    2009-01-01

    The problem of pion-electron identification based on their energy losses in the TRD is considered in the frame of the CBM experiment. For particles identification an artificial neural network (ANN) was used, a multilayer perceptron realized in JETNET and ROOT packages. It is demonstrated that, in order to get correct and comparable results, it is important to define the network structure correctly. The recommendations for such a selection are given. In order to achieve an acceptable level of pions suppression, the energy losses need to be transformed to more 'effective' variables. The dependency of ANN output threshold for a fixed portion of electron loss on the particle momentum is presented

  18. Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

    Rotunno, E.; Fabbri, F.; Cinquanta, E.; Kaplan, D.; Longo, M.; Lazzarini, L.; Molle, A.; Swaminathan, V.; Salviati, G.

    2016-06-01

    MoS2 multi-layer flakes, exfoliated from geological molybdenite, have been exposed to high dose electron irradiation showing clear evidence of crystal lattice and stoichiometry modifications. A massive surface sulfur depletion is induced together with the consequent formation of molybdenum nanoislands. It is found that a nanometric amorphous carbon layer, unwillingly deposited during the transmission electron microscope experiments, prevents the formation of the nanoislands. In the absence of the carbon layer, the formation of molybdenum grains proceeds both on the top and bottom surfaces of the flake. If carbon is present on both the surfaces then the formation of Mo grains is completely prevented.

  19. Molecular electronics with single molecules in solid-state devices.

    Moth-Poulsen, Kasper; Bjørnholm, Thomas

    2009-09-01

    The ultimate aim of molecular electronics is to understand and master single-molecule devices. Based on the latest results on electron transport in single molecules in solid-state devices, we focus here on new insights into the influence of metal electrodes on the energy spectrum of the molecule, and on how the electron transport properties of the molecule depend on the strength of the electronic coupling between it and the electrodes. A variety of phenomena are observed depending on whether this coupling is weak, intermediate or strong.

  20. Tissue-electronics interfaces: from implantable devices to engineered tissues

    Feiner, Ron; Dvir, Tal

    2018-01-01

    Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

  1. Holmium hafnate: An emerging electronic device material

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S.; Scott, James F.

    2015-01-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho 2 Hf 2 O 7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E g of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices

  2. Holmium hafnate: An emerging electronic device material

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

    2015-03-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  3. Holmium hafnate: An emerging electronic device material

    Pavunny, Shojan P., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S., E-mail: shojanpp@gmail.com, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Scott, James F. [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE (United Kingdom)

    2015-03-16

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  4. Inventory Control: A Small Electronic Device for Studying Chemical Kinetics.

    Perez-Rodriguez, A. L.; Calvo-Aguilar, J. L.

    1984-01-01

    Shows how the rate of reaction can be studied using a simple electronic device that overcomes the difficulty students encounter in solving the differential equations describing chemical equilibrium. The device, used in conjunction with an oscilloscope, supplies the voltages that represent the chemical variables that take part in the equilibrium.…

  5. Electronic system of TBR tokamak device

    Silva, R.P. da.

    1980-01-01

    The electronics developed as a part of the TBR project, which involves the construction of a small tokamak at the Physics Institute of the University of Sao Paulo, is described. On the basis of tokamak parameter values, the electronics for the toroidal field, ohmic/heating and vertical field systems is presented, including capacitors bank, switches, triggering circuits and power supplies. A controlled power oscilator used in discharge cleaning and pre-ionization is also described. The performance of the system as a function of the desired plasma parameters is discussed. (Author) [pt

  6. An examination of safety reports involving electronic flight bags and portable electronic devices

    2014-06-01

    The purpose of this research was to develop a better understanding of safety considerations with the use of Electronic Flight Bags (EFBs) and Portable Electronic Devices (PEDs) by examining safety reports from Aviation Safety Reporting System (ASRS),...

  7. A new automatic design method to develop multilayer thin film devices for high power laser applications

    Sahoo, N.K.; Apparao, K.V.S.R.

    1992-01-01

    Optical thin film devices play a major role in many areas of frontier technology like development of various laser systems to the designing of complex and precision optical systems. Design and development of these devices are really challenging when they are meant for high power laser applications. In these cases besides desired optical characteristics, the devices are expected to satisfy a whole range of different needs like high damage threshold, durability etc. In the present work a novel completely automatic design method based on Modified Complex Method has been developed for designing of high power thin film devices. Unlike most of the other methods it does not need any suitable starting design. A quarterwave design is sufficient to start with. If required, it is capable of generating its own starting design. The computer code of the method is very simple to implement. This report discusses this novel automatic design method and presents various practicable output designs generated by it. The relative efficiency of the method along with other powerful methods has been presented while designing a broadband IR antireflection coating. The method is also incorporated with 2D and 3D electric field analysis programmes to produce high damage threshold designs. Some experimental devices developed using such designs are also presented in the report. (author). 36 refs., 41 figs

  8. Non-destructive Reliability Evaluation of Electronic Device by ESPI

    Yoon, Sung Un; Kim, Koung Suk; Kang, Ki Soo; Jo, Seon Hyung

    2001-01-01

    This paper propose electronic speckle pattern interferometry(ESPI) for reliability evaluation of electronic device. Especially, vibration problem in a fan of air conditioner, motor of washing machine and etc. is important factor to design the devices. But, it is difficult to apply previous method, accelerometer to the devices with complex geometry. ESPI, non-contact measurement technique applies a commercial fan of air conditioner to vibration analysis. Vibration mode shapes, natural frequency and the range of the frequency are decided and compared with that of FEM analysis. In mechanical deign of new product, ESPI adds weak point of previous method to supply effective design information

  9. Molecular and nanoscale materials and devices in electronics.

    Fu, Lei; Cao, Lingchao; Liu, Yunqi; Zhu, Daoben

    2004-12-13

    Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

  10. Few-electron Qubits in Silicon Quantum Electronic Devices

    2014-09-01

    Calculation of the charge relaxation time T1 . . . . . . . . . . . . . . 63 5.1 The absence of spin blockade in dual-gated DQD devices . . . . . . . 70...2013. 98 115 [102] M. Pioro-Ladrière, T. Obata, Y. Tokura, Y.-S. Shin, T. Kubo , K. Yoshida, T. Taniyama, and S. Tarucha. Nat. Phys., 4:776–779

  11. Charge-coupled device area detector for low energy electrons

    Horáček, Miroslav

    2003-01-01

    Roč. 74, č. 7 (2003), s. 3379 - 3384 ISSN 0034-6748 R&D Projects: GA ČR GA102/00/P001 Institutional research plan: CEZ:AV0Z2065902 Keywords : low energy electrons * charged-coupled device * detector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.343, year: 2003

  12. Incorporating Ethical Consumption into Electronic Device Acquisition: A Proposal

    Poggiali, Jennifer

    2016-01-01

    This essay proposes that librarians practice ethical consumption when purchasing electronic devices. Though librarians have long been engaged with environmentalism and social justice, few have suggested that such issues as e-waste and sweatshop labor should impact our decisions to acquire e-readers, tablets, and other electronics. This article…

  13. Macroscopic charge quantization in single-electron devices

    Burmistrov, I.S.; Pruisken, A.M.M.

    2010-01-01

    In a recent paper by the authors [I. S. Burmistrov and A. M. M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single-electron transistor or SET) display "macroscopic charge quantization" which is completely analogous to the quantum Hall effect observed on

  14. Electronic cigarette devices and oro-facial trauma (Literature review)

    Ghazali, A. F.; Ismail, A. F.; Daud, A.

    2017-08-01

    Detrimental effects of cigarette smoking have been well described and recognized globally. With recent advancement of technology, electronic cigarette has been introduced and gained its popularity and became a global trend, especially among young adults. However, the safety of the electronic devices remains debatable. This paper aimed to compile and review the reported cases of oro-facial trauma related to the usage of electronic cigarette devices. A literature search was conducted using PubMed/Medline in December 2016. The search terms used were a combination of “oral trauma”, “dental trauma”, “oral injury” and “electronic cigarette”. The search included all abstract published from the inception of the database until December 2016. Abstract that was written in English, case report, letter to editors, clinical and human studies were included for analysis. All selected abstract were searched for full articles. A total of 8 articles were included for review. All of the articles were published in 2016 with mostly case reports. The sample size of the studies ranged from 1 to 15 patients. Seven of the included articles are from United States of America and one from Mexico. Our review concluded that the use of electronic cigarette devices posed not only a safety concern but also that the devices were mostly unregulated. There should be a recognized authority body to regulate the safety and standard of the electronic devices.

  15. Progress in Group III nitride semiconductor electronic devices

    Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

    2012-01-01

    Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

  16. Consumers' Use of Personal Electronic Devices in the Kitchen.

    Lando, Amy M; Bazaco, Michael C; Chen, Yi

    2018-02-23

    Smartphones, tablets, and other personal electronic devices have become ubiquitous in Americans' daily lives. These devices are used by people throughout the day, including while preparing food. For example, a device may be used to look at recipes and therefore be touched multiple times during food preparation. Previous research has indicated that cell phones can harbor bacteria, including opportunistic human pathogens such as Staphylococcus and Klebsiella spp. This investigation was conducted with data from the 2016 Food Safety Survey (FSS) and from subsequent focus groups to determine the frequency with which consumers use personal electronic devices in the kitchen while preparing food, the types of devices used, and hand washing behaviors after handling these devices. The 2016 FSS is the seventh wave of a repeated cross-sectional survey conducted by the U.S. Food and Drug Administration in collaboration with the U.S. Department of Agriculture. The goal of the FSS is to evaluate U.S. adult consumer attitudes, behaviors, and knowledge about food safety. The FSS included 4,169 adults that were contacted using a dual-frame (land line and cell phone interviews) random-digit-dial sampling process. The personal electronics module was the first of three food safety topics discussed by each of eight consumer focus groups, which were convened in four U.S. cities in fall 2016. Results from the 2016 FSS revealed that of those individuals who use personal electronic devices while cooking, only about one third reported washing hands after touching the device and before continuing cooking. This proportion is significantly lower than that for self-reported hand washing behaviors after touching risky food products such as raw eggs, meat, chicken, or fish. Results from the focus groups highlight the varied usage of these devices during food preparation and the related strategies consumers are using to incorporate personal electric devices into their cooking routines.

  17. dc-plasma-sprayed electronic-tube device

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  18. Ferrite nanoparticles: Synthesis, characterisation and applications in electronic device

    Kefeni, Kebede K., E-mail: kkefeni@gmail.com; Msagati, Titus A.M.; Mamba, Bhekie B.

    2017-01-15

    Highlights: • Available synthesis methods of ferrite nanoparticles (FNPs) are briefly reviewed. • Summary of the advantage and limitation of FNPs synthesis techniques are presented. • The existing most common FNPs characterisation techniques are briefly reviewed. • Major application areas of FNPs in electronic materials are reviewed. - Abstract: Ferrite nanoparticles (FNPs) have attracted a great interest due to their wide applications in several areas such as biomedical, wastewater treatment, catalyst and electronic device. This review focuses on the synthesis, characterisation and application of FNPs in electronic device with more emphasis on the recently published works. The most commonly used synthesis techniques along with their advantages and limitations are discussed. The available characterisation techniques and their application in electronic materials such as sensors and biosensors, energy storage, microwave device, electromagnetic interference shielding and high-density recording media are briefly reviewed.

  19. Terrestrial radiation effects in ULSI devices and electronic systems

    Ibe, Eishi H

    2014-01-01

    A practical guide on how mathematical approaches can be used to analyze and control radiation effects in semiconductor devices within various environments Covers faults in ULSI devices to failures in electronic systems caused by a wide variety of radiation fields, including electrons, alpha -rays, muons, gamma rays, neutrons and heavy ions. Readers will learn the environmental radiation features at the ground or avionics altitude. Readers will also learn how to make numerical models from physical insight and what kind of mathematical approaches should be implemented to analyze the radiation effects. A wide variety of mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them. The book provides the reader with the knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. It explains how electronic systems including servers and rout...

  20. Buffer layers and articles for electronic devices

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  1. 75 FR 10502 - In the Matter of Certain Electronic Devices, Including Handheld Wireless Communications Devices...

    2010-03-08

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-667; Investigation No. 337-TA-673] In the Matter of Certain Electronic Devices, Including Handheld Wireless Communications Devices; Notice of... Entirety AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that...

  2. Determination of the electronic density of states near buried interfaces: Application to Co/Cu multilayers

    Nilsson, A.; Sthör, J.; Wiell, T.

    1996-01-01

    High-resolution L(3) x-ray absorption and emission spectra of Co and Cu in Co/Cu multilayers are shown to provide unique information on the occupied and unoccupied density of d states near buried interfaces. The d bands of both Co and Cu interfacial layers are shown to be considerably narrowed...

  3. Nature-Inspired Structural Materials for Flexible Electronic Devices.

    Liu, Yaqing; He, Ke; Chen, Geng; Leow, Wan Ru; Chen, Xiaodong

    2017-10-25

    Exciting advancements have been made in the field of flexible electronic devices in the last two decades and will certainly lead to a revolution in peoples' lives in the future. However, because of the poor sustainability of the active materials in complex stress environments, new requirements have been adopted for the construction of flexible devices. Thus, hierarchical architectures in natural materials, which have developed various environment-adapted structures and materials through natural selection, can serve as guides to solve the limitations of materials and engineering techniques. This review covers the smart designs of structural materials inspired by natural materials and their utility in the construction of flexible devices. First, we summarize structural materials that accommodate mechanical deformations, which is the fundamental requirement for flexible devices to work properly in complex environments. Second, we discuss the functionalities of flexible devices induced by nature-inspired structural materials, including mechanical sensing, energy harvesting, physically interacting, and so on. Finally, we provide a perspective on newly developed structural materials and their potential applications in future flexible devices, as well as frontier strategies for biomimetic functions. These analyses and summaries are valuable for a systematic understanding of structural materials in electronic devices and will serve as inspirations for smart designs in flexible electronics.

  4. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Mesta, M.; Coehoorn, R.; Bobbert, P. A. [Department of Applied Physics, Technische Universiteit Eindhoven, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Eersel, H. van [Simbeyond B.V., P.O. Box 513, NL-5600 MB Eindhoven (Netherlands)

    2016-03-28

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  5. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Mesta, M.; van Eersel, H.; Coehoorn, R.; Bobbert, P. A.

    2016-03-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  6. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Mesta, M.; Coehoorn, R.; Bobbert, P. A.; Eersel, H. van

    2016-01-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  7. Electronic device for endosurgical skills training (EDEST): study of reliability.

    Pagador, J B; Uson, J; Sánchez, M A; Moyano, J L; Moreno, J; Bustos, P; Mateos, J; Sánchez-Margallo, F M

    2011-05-01

    Minimally Invasive Surgery procedures are commonly used in many surgical practices, but surgeons need specific training models and devices due to its difficulty and complexity. In this paper, an innovative electronic device for endosurgical skills training (EDEST) is presented. A study on reliability for this device was performed. Different electronic components were used to compose this new training device. The EDEST was focused on two basic laparoscopic tasks: triangulation and coordination manoeuvres. A configuration and statistical software was developed to complement the functionality of the device. A calibration method was used to assure the proper work of the device. A total of 35 subjects (8 experts and 27 novices) were used to check the reliability of the system using the MTBF analysis. Configuration values for triangulation and coordination exercises were calculated as 0.5 s limit threshold and 800-11,000 lux range of light intensity, respectively. Zero errors in 1,050 executions (0%) for triangulation and 21 errors in 5,670 executions (0.37%) for coordination were obtained. A MTBF of 2.97 h was obtained. The results show that the reliability of the EDEST device is acceptable when used under previously defined light conditions. These results along with previous work could demonstrate that the EDEST device can help surgeons during first training stages.

  8. Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

    Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

    2018-05-01

    In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

  9. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  12. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  13. Introduction to organic electronic and optoelectronic materials and devices

    Sun, Sam-Shajing

    2008-01-01

    Introduction to Optoelectronic Materials, N. Peyghambarian and M. Fallahi Introduction to Optoelectronic Device Principles, J. Piprek Basic Electronic Structures and Charge Carrier Generation in Organic Optoelectronic Materials, S.-S. Sun Charge Transport in Conducting Polymers, V.N. Prigodin and A.J. Epstein Major Classes of Organic Small Molecules for Electronic and Optoelectronics, X. Meng, W. Zhu, and H. Tian Major Classes of Conjugated Polymers and Synthetic Strategies, Y. Li and J. Hou Low Energy Gap, Conducting, and Transparent Polymers, A. Kumar, Y. Ner, and G.A. Sotzing Conjugated Polymers, Fullerene C60, and Carbon Nanotubes for Optoelectronic Devices, L. Qu, L. Dai, and S.-S. Sun Introduction of Organic Superconducting Materials, H. Mori Molecular Semiconductors for Organic Field-Effect Transistors, A. Facchetti Polymer Field-Effect Transistors, H.G.O. Sandberg Organic Molecular Light-Emitting Materials and Devices, F. So and J. Shi Polymer Light-Emitting Diodes: Devices and Materials, X. Gong and ...

  14. Development of beam diagnostic devices for characterizing electron guns

    Bhattacharjee, D.; Tiwari, R.; Jayaprakash, D.; Mishra, R.L.; Sarukte, H.; Waghmare, A.; Thakur, N.; Dixit, K.P.

    2015-01-01

    The electron guns for the DC accelerators and RF Linacs are designed and developed at EBC/APPD/BARC, Kharghar. These electron guns need to be characterized for its design and performance. Two test benches were developed for characterizing the electron guns. Various beam diagnostic devices for measuring beam currents and beam sizes were developed. Conical faraday cup, segmented faraday cup, slit scanning bellows movement arrangement, multi-plate beam size measurement setup, multi- wire beam size measurement setup, Aluminum foil puncture assembly etc. were developed and used. The paper presents the in-house development of various beam diagnostics for characterizing electron guns and their use. (author)

  15. Conceptual design and simulation investigation of an electronic cooling device powered by hot electrons

    Su, Guozhen; Zhang, Yanchao; Cai, Ling; Su, Shanhe; Chen, Jincan

    2015-01-01

    Most electronic cooling devices are powered by an external bias applied between the cold and the hot reservoirs. Here we propose a new concept of electronic cooling, in which cooling is achieved by using a reservoir of hot electrons as the power source. The cooling device incorporates two energy filters with the Lorentzian transmission function to respectively select low- and high-energy electrons for transport. Based on the proposed model, we analyze the performances of the device varying with the resonant levels and half widths of two energy filters and establish the optimal configuration of the cooling device. It is believed that such a novel device may be practically used in some nano-energy fields. - Highlights: • A new electronic cooling device powered by hot electrons is proposed. • Two energy filters are employed to select the electrons for transport. • The effects of the resonant levels and half widths of two filters are discussed. • The maximum cooling power and coefficient of performance are calculated. • The optimal configuration of the cooling device is determined.

  16. Biomimetic self-assembly of a functional asymmetrical electronic device.

    Boncheva, Mila; Gracias, David H; Jacobs, Heiko O; Whitesides, George M

    2002-04-16

    This paper introduces a biomimetic strategy for the fabrication of asymmetrical, three-dimensional electronic devices modeled on the folding of a chain of polypeptide structural motifs into a globular protein. Millimeter-size polyhedra-patterned with logic devices, wires, and solder dots-were connected in a linear string by using flexible wire. On self-assembly, the string folded spontaneously into two domains: one functioned as a ring oscillator, and the other one as a shift register. This example demonstrates that biomimetic principles of design and self-organization can be applied to generate multifunctional electronic systems of complex, three-dimensional architecture.

  17. Plykin type attractor in electronic device simulated in MULTISIM

    Kuznetsov, Sergey P.

    2011-12-01

    An electronic device is suggested representing a non-autonomous dynamical system with hyperbolic chaotic attractor of Plykin type in the stroboscopic map, and the results of its simulation with software package NI MULTISIM are considered in comparison with numerical integration of the underlying differential equations. A main practical advantage of electronic devices of this kind is their structural stability that means insensitivity of the chaotic dynamics in respect to variations of functions and parameters of elements constituting the system as well as to interferences and noises.

  18. DIFFUSION OF THE PULSED ELECTROMAGNETIC FIELD INTO THE MULTI-LAYER CORE OF INDUCTOR AT PULSED DEVICES

    Volodymyr T. Chemerys

    2008-02-01

    Full Text Available  The problem of the pulsed magnetic field distribution in the cross section of the inductor core at the induction accelerator of electron beam is under consideration in this paper. Owing to multi-layer structure of the core package it has the magnetic and electric anisotropy with different speed of the field diffusion along the sheets of magnetic and across the sheets. At the pulse duration less than one microsecond the essential non-uniformity of the field along both axes of the core cross section can be found. This effect reduces the efficiency of the ferromagnetic material using with corresponding loss of the accelerator efficiency. The main conclusion of the paper consists of the necessity to check the field diffusion characteristics in the process of inductor design to be sure that the pulsed field is able to fill the cross section of the core during the pulse switching. The magnetic characteristics of the anisotropic core have been investigated in the paper by one-dimensional and two-dimensional simulation in the quasi-stationary approximation using the traditional equation of the field diffusion.

  19. Electronic firing systems and methods for firing a device

    Frickey, Steven J [Boise, ID; Svoboda, John M [Idaho Falls, ID

    2012-04-24

    An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

  20. Fabrication of multilayer nanowires

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  1. Fabrication of multilayer nanowires

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  2. A method for building low loss multi-layer wiring for superconducting microwave devices

    Dunsworth, A.; Barends, R.; Chen, Yu; Chen, Zijun; Chiaro, B.; Fowler, A.; Foxen, B.; Jeffrey, E.; Kelly, J.; Klimov, P. V.; Lucero, E.; Mutus, J. Y.; Neeley, M.; Neill, C.; Quintana, C.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T. C.; Neven, H.; Martinis, John M.; Megrant, A.

    2018-02-01

    Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ˜3.9 × 10-8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.

  3. Transmission environmental scanning electron microscope with scintillation gaseous detection device

    Danilatos, Gerasimos; Kollia, Mary; Dracopoulos, Vassileios

    2015-01-01

    A transmission environmental scanning electron microscope with use of a scintillation gaseous detection device has been implemented. This corresponds to a transmission scanning electron microscope but with addition of a gaseous environment acting both as environmental and detection medium. A commercial type of low vacuum machine has been employed together with appropriate modifications to the detection configuration. This involves controlled screening of various emitted signals in conjunction with a scintillation gaseous detection device already provided with the machine for regular surface imaging. Dark field and bright field imaging has been obtained along with other detection conditions. With a progressive series of modifications and tests, the theory and practice of a novel type of microscopy is briefly shown now ushering further significant improvements and developments in electron microscopy as a whole. - Highlights: • Novel scanning transmission electron microscopy (STEM) with an environmental scanning electron microscope (ESEM) called TESEM. • Use of the gaseous detection device (GDD) in scintillation mode that allows high resolution bright and dark field imaging in the TESEM. • Novel approach towards a unification of both vacuum and environmental conditions in both bulk/surface and transmission mode of electron microscopy

  4. Release strategies for making transferable semiconductor structures, devices and device components

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  5. 77 FR 38829 - Certain Electronic Imaging Devices; Institution of Investigation

    2012-06-29

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-850] Certain Electronic Imaging Devices; Institution of Investigation AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on May 23, 2012...

  6. A Web Service and Interface for Remote Electronic Device Characterization

    Dutta, S.; Prakash, S.; Estrada, D.; Pop, E.

    2011-01-01

    A lightweight Web Service and a Web site interface have been developed, which enable remote measurements of electronic devices as a "virtual laboratory" for undergraduate engineering classes. Using standard browsers without additional plugins (such as Internet Explorer, Firefox, or even Safari on an iPhone), remote users can control a Keithley…

  7. Front and backside processed thin film electronic devices

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  8. Electron density measurement in an evolving plasma. Experimental devices

    Consoli, Terenzio; Dagai, Michel

    1960-01-01

    The experimental devices described here allow the electron density measurements in the 10 16 e/m 3 to 10 20 e/m 3 interval. Reprint of a paper published in Comptes rendus des seances de l'Academie des Sciences, t. 250, p. 1223-1225, sitting of 15 February 1960 [fr

  9. In plane optical sensor based on organic electronic devices

    Koetse, M.M; Rensing, P.A.; Heck, G.T. van; Sharpe, R.B.A.; Allard, B.A.M.; Wieringa, F.P.; Kruijt, P.G.M.; Meulendijks, N.M.M.; Jansen, H.; Schoo, H.F.M.

    2008-01-01

    Sensors based on organic electronic devices are emerging in a wide range of application areas. Here we present a sensor platform using organic light emitting diodes (OLED) and organic photodiodes (OPD) as active components. By means of lamination and interconnection technology the functional foils

  10. Expert system for fault diagnostic in electronic devices

    Benedetti, G

    1984-03-01

    Troubleshooting of electronic devices and highly complex PCBS (printed circuit boards) is an area where expert systems can be used. In addition to the difficulties intrinsic to this area it is also impossible to integrate the amount of knowledge based on experience in a traditional model. 8 references.

  11. Opto-electronic devices with nanoparticles and their assemblies

    Nguyen, Chieu Van

    Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au NPs has great potential in modern electronics such as solid state lighting, plasma-based nanoelectronics, and memory devices.

  12. Transmission environmental scanning electron microscope with scintillation gaseous detection device.

    Danilatos, Gerasimos; Kollia, Mary; Dracopoulos, Vassileios

    2015-03-01

    A transmission environmental scanning electron microscope with use of a scintillation gaseous detection device has been implemented. This corresponds to a transmission scanning electron microscope but with addition of a gaseous environment acting both as environmental and detection medium. A commercial type of low vacuum machine has been employed together with appropriate modifications to the detection configuration. This involves controlled screening of various emitted signals in conjunction with a scintillation gaseous detection device already provided with the machine for regular surface imaging. Dark field and bright field imaging has been obtained along with other detection conditions. With a progressive series of modifications and tests, the theory and practice of a novel type of microscopy is briefly shown now ushering further significant improvements and developments in electron microscopy as a whole. Copyright © 2014 Elsevier B.V. All rights reserved.

  13. Polyphenylsilole multilayers--an insight from X-ray electron spectroscopy and density functional theory.

    Diller, Katharina; Ma, Yong; Luo, Yi; Allegretti, Francesco; Liu, Jianzhao; Tang, Ben Zhong; Lin, Nian; Barth, Johannes V; Klappenberger, Florian

    2015-12-14

    We present a combined investigation by means of X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy of condensed multilayers of two polyphenylsiloles, namely hexaphenylsilole (HPS) and tetraphenylsilole (TPS). Both compounds exhibit very similar spectroscopic signatures, whose interpretation is aided by density functional theory (DFT) calculations. High-resolution XPS spectra of the Si 2p and C 1s core levels of these multilayers indicate a positively charged silicon ion flanked by two negatively charged adjacent carbon atoms in the silole core of both molecules. This result is corroborated quantitatively by DFT calculations on isolated HPS (TPS) molecules, which show a natural bond orbital partial charge of +1.67 e (+1.58 e) on the silicon and -0.34 e (-0.58 e) on the two neighbouring carbon atoms in the silole ring. These charges are conserved in direct contact with a Cu(111) substrate for films of submonolayer coverage, as evidenced by the Si 2p XPS data. The C K-edge NEXAFS spectra of HPS and TPS multilayers exhibit distinct and differing features. Their main characteristics reappear in the simulated spectra and are assigned to the different inequivalent carbon species in the molecule. The angle-dependent measurements hardly reveal any dichroism, i.e., the molecular π-systems are not uniformly oriented parallel or perpendicular with respect to the surface. Changes in the growth conditions of TPS, i.e., a reduction of the substrate temperature from 240 K to 80 K during deposition, lead to a broadening of both XPS and NEXAFS signatures, as well as an upward shift of the Si 2p and C 1s binding energies, indicative of a less ordered growth mode at low temperature.

  14. MIS hot electron devices for enhancement of surface reactivity by hot electrons

    Thomsen, Lasse Bjørchmar

    A Metal-Insulator-Semiconductor (MIS) based device is developed for investigation of hot electron enhanced chemistry. A model of the device is presented explaining the key concepts of the functionality and the character- istics. The MIS hot electron emitter is fabricated using cleanroom technology...... and the process sequence is described. An Ultra High Vacuum (UHV) setup is modified to facilitate experiments with electron emission from the MIS hot electron emitters and hot electron chemistry. Simulations show the importance of keeping tunnel barrier roughness to an absolute minimum. The tunnel oxide...... to be an important energy loss center for the electrons tunneling through the oxide lowering the emission e±ciency of a factor of 10 for a 1 nm Ti layer thickness. Electron emission is observed under ambient pressure conditions and in up to 2 bars of Ar. 2 bar Ar decrease the emission current by an order...

  15. Development of an irradiation device for electron beam wastewater treatment

    Rela, Paulo Roberto

    2003-01-01

    When domestic or industrial effluents with synthetic compounds are disposed without an adequate treatment, they impact negatively the environment with damages to aquatic life and for the human being. Both population and use of goods and services that contribute for the hazardous waste are growing. Hazardous regulations are becoming more restrictive and technologies, which do not destroy these products, are becoming less acceptable. The electron beam radiation process is an advanced oxidation process, that produces highly reactive radicals resulting in mineralization of the contaminant. In this work was developed an irradiation system in order to optimize the interaction of electron beam delivered from the accelerator with the processed effluent. It is composed by an irradiation device where the effluent presents to the electron beam in an up flow stream and a process control unit that uses the calorimetric principle. The developed irradiation device has a different configuration from the devices used by others researchers that are working with this technology. It was studied the technical and economic feasibility, comparing with the literature the results of the irradiation device demonstrated that it has a superior performance, becoming an process for use in disinfection and degradation of hazardous organic compounds of wastewater from domestic and industrial origin, contributing as an alternative technology for Sanitary Engineering. (author)

  16. Low power signal processing electronics for wearable medical devices.

    Casson, Alexander J; Rodriguez-Villegas, Esther

    2010-01-01

    Custom designed microchips, known as Application Specific Integrated Circuits (ASICs), offer the lowest possible power consumption electronics. However, this comes at the cost of a longer, more complex and more costly design process compared to one using generic, off-the-shelf components. Nevertheless, their use is essential in future truly wearable medical devices that must operate for long periods of time from physically small, energy limited batteries. This presentation will demonstrate the state-of-the-art in ASIC technology for providing online signal processing for use in these wearable medical devices.

  17. On the OSL curve shape and preheat treatment of electronic components from portable electronic devices

    Woda, Clemens; Greilich, Steffen; Beerten, Koen

    2010-01-01

    The shape of the OSL decay curve and the effect of longer time delays between accidental exposure and readout of alumina-rich electronic components from portable electronic devices are investigated. The OSL decay curve follows a hyperbolic decay function, which is interpreted as an approximation ...

  18. Investigation of ceramic devices by analytical electron microscopy techniques

    Shiojiri, M.; Saijo, H.; Isshiki, T.; Kawasaki, M.; Yoshioka, T.; Sato, S.; Nomura, T.

    1999-01-01

    Ceramics are widely used as capacitors and varistors. Their electrical properties depend on the structure, which is deeply influenced not only by the composition of raw materials and additives but also by heating treatments in the production process. This paper reviews our investigations of SrTiO 3 ceramic devices, which have been performed using various microscopy techniques such as high-resolution transmission electron microscopy (HRTEM), cathodoluminescence scanning electron microscopy (CLSEM), field emission SEM (FE-SEM), energy dispersive X-ray spectroscopy (EDS), electron energy-loss spectroscopy (EELS) and high angle annular dark field (HAADF) imaging method in a FE-(scanning) transmission electron microscope(FE-(S)TEM). (author)

  19. Ionizing device comprising a microchannel electron multiplier with secondary electron emission

    Chalmeton, Vincent.

    1974-01-01

    The present invention relates to a ionizing device comprising a microchannel electron multiplier involving secondary electron emission as a means of ionization. A system of electrodes is used to accelerate said electrons, ionize the gas and extract the ions from thus created plasma. Said ionizer is suitable for bombarding the target in neutron sources (target of the type of nickel molybdenum coated with tritiated titanium or with a tritium deuterium mixture) [fr

  20. Organic structures design applications in optical and electronic devices

    Chow, Tahsin J

    2014-01-01

    ""Presenting an overview of the syntheses and properties of organic molecules and their applications in optical and electronic devices, this book covers aspects concerning theoretical modeling for electron transfer, solution-processed micro- and nanomaterials, donor-acceptor cyclophanes, molecular motors, organogels, polyazaacenes, fluorogenic sensors based on calix[4]arenes, and organic light-emitting diodes. The publication of this book is timely because these topics have become very popular nowadays. The book is definitely an excellent reference for scientists working in these a

  1. Innovative soft magnetic multilayers with enhanced in-plane anisotropy and ferromagnetic resonance frequency for integrated RF passive devices

    Falub, Claudiu V.; Bless, Martin; Hida, Rachid; MeduÅa, Mojmír; Ammann, Arnold

    2018-04-01

    We present an innovative, economical method for manufacturing soft magnetic materials that may pave the way for integrated thin film magnetic cores with dramatically improved properties. Soft magnetic multilayered thin films based on the Fe-28%Co20%B (at.%) and Co-4.5%Ta4%Zr (at.%) amorphous alloys are deposited on 8" bare Si and Si/200nm-thermal-SiO2 wafers in an industrial, high-throughput Evatec LLS EVO II magnetron sputtering system. The multilayers consist of stacks of alternating 80-nm-thick ferromagnetic layers and 4-nm-thick Al2O3 dielectric interlayers. Since in our dynamic sputter system the substrate cage rotates continuously, such that the substrates face different targets alternatively, each ferromagnetic sublayer in the multilayer consists of a fine structure comprising alternating CoTaZr and FeCoB nanolayers with very sharp interfaces. We adjust the thickness of these individual nanolayers between 0.5 and 1.5 nm by changing the cage rotation speed and the power of each gun, which is an excellent mode to engineer new, composite ferromagnetic materials. Using X-ray reflectometry (XRR) we reveal that the interfaces between the FeCoB and CoTaZr nanolayers are perfectly smooth with roughness of 0.2-0.3 nm. Kerr magnetometry and B-H looper measurements for the as-deposited samples show that the coercivity of these thin films is very low, 0.2-0.3 Oe, and gradually scales up with the thickness of FeCoB nanolayers, i.e. with the increase of the overall Fe content from 0 % (e.g. CoTaZr-based multilayers) to 52 % (e.g. FeCoB-based multilayers). We explain this trend in the random anisotropy model, based on considerations of grain size growth, as revealed by glancing angle X-ray diffraction (GAXRD), but also because of the increase of magnetostriction with the increase of Fe content as shown by B-H looper measurements performed on strained wafers. The unexpected enhancement of the in-plane anisotropy field from 18.3 Oe and 25.8 Oe for the conventional Co

  2. Device for monitoring electron-ion ring parameters

    Tyutyunnikov, S.I.; Shalyapin, V.N.

    1982-01-01

    The invention is classified as the method of collective ion acceleration. The device for electron-ion ring parameters monitoring is described. The invention is aimed at increasing functional possibilities of the device at the expense of the enchance in the number of the ring controlled parameters. The device comprises three similar plane mirrors installed over accelerating tube circumference and a mirror manufactured in the form of prism and located in the tube centre, as well as the system of synchrotron radiation recording and processing. Two plane mirrors are installed at an angle of 45 deg to the vertical axis. The angle of the third plane mirror 3 α and that of prismatic mirror 2 α to the vertical axis depend on geometric parameters of the ring and accelerating tube and they are determined by the expression α=arc sin R K /2(R T -L), where R K - ring radius, R T - accelerating tube radius, L - the height of segment, formed by the mirror and inner surface of the accelerating tube. The device suggested permits to determine longitudinal dimensions of the ring, its velocity and the number of electrons and ions in the ring

  3. Flexible Organic Electronics in Biology: Materials and Devices.

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-09

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Charge-coupled device area detector for low energy electrons

    Horacek, Miroslav

    2003-01-01

    A fast position-sensitive detector was designed for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope (SLEEM), based on a thinned back-side directly electron-bombarded charged-coupled device (CCD) sensor (EBCCD). The principle of the SLEEM operation and the motivation for the development of the detector are explained. The electronics of the detector is described as well as the methods used for the measurement of the electron-bombarded gain and of the dark signal. The EBCCD gain of 565 for electron energy 5 keV and dynamic range 59 dB for short integration time up to 10 ms at room temperature were obtained. The energy dependence of EBCCD gain and the detection efficiency are presented for electron energy between 2 and 5 keV, and the integration time dependence of the output signals under dark conditions is given for integration time from 1 to 500 ms

  5. 3D Design Tools for Vacuum Electron Devices

    Levush, Baruch

    2003-01-01

    A reduction of development costs will have a significant impact on the total cost of the vacuum electron devices. Experimental testing cycles can be reduced or eliminated through the use of simulation-based design methodology, thereby reducing the time and cost of development. Moreover, by use of modern optimization tools for automating the process of seeking specific solution parameters and for studying dependencies of performance on parameters, new performance capabilities can be achieved, without resorting to expensive cycles of hardware fabrication and testing. Simulation-based-design will also provide the basis for sensitivity studies for determining the manufacturing tolerances associated with a particular design. Since material properties can have a critical effect on the performance of the vacuum electron devices, the design tools require precise knowledge of material characteristics, such as dielectric properties of the support rods, loss profile etc. Sensitivity studies must therefore include the effects of materials properties variation on device performance. This will provide insight for choosing the proper technological processes in order to achieve these tolerances, which is of great importance for achieving cost reduction. A successful design methodology depends on the development of accurate and efficient design tools with predictive capabilities. These design tools must be based on realistic models capable of high fidelity representation of geometry and materials, they must have optimization capabilities, and they must be easy to use

  6. Transmission electron microscopy study of the microstructure and crystallographic orientation relationships in V/Ag multilayers

    Wei Qiangmin; Misra, Amit

    2010-01-01

    Microstructures and orientation relationships in sputter-deposited, polycrystalline V/Ag multilayers with different individual thicknesses ranging from 1 to 50 nm were investigated. It was found that the wavy morphology of layers resulting from competitive kinetic limitations of deposited atoms gives rise to a variety of orientation relationships between two adjacent layers. At the top or bottom of curved layers Kurdjumov-Sachs and Nishiyama-Wasserman orientations were dominant, while on the slopes of the wavy interfaces close-packed face-centered cubic and body-centered cubic planes joined each other. As a consequence, Bain, Pitsch and many intermediate orientation relationships were generated. In most cases intermediate orientations with 1-3 o deviations from the parallel planes or directions in standard orientations were observed. The tilted interfaces, followed by the introduction of disconnections to relieve misfit stress, had a tendency to form an invariant habit plane in which the strain was completely relieved. A model describing disconnections and invariant planes can explain the observed deviations and orientation of the habit plane. Calculations of the evolution of the surface morphology on the basis of the kinetic behavior of deposits were performed to facilitate interpretation of the formation of the wavy structure.

  7. Optical sensor array platform based on polymer electronic devices

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  8. Critical appraisal of cardiac implantable electronic devices: complications and management

    Padeletti L

    2011-09-01

    Full Text Available Luigi Padeletti1, Giosuè Mascioli2, Alessandro Paoletti Perini1, Gino Grifoni1, Laura Perrotta1, Procolo Marchese3, Luca Bontempi3, Antonio Curnis31Istituto di Clinica Medica e Cardiologia, Università degli Studi di Firenze, Italia; 2Elettrofisiologia, Istituto Humanitas Gavazzeni, Bergamo, Italia; 3Elettrofisiologia, Spedali Civili, Brescia, ItaliaAbstract: Population aging and broader indications for the implant of cardiac implantable electronic devices (CIEDs are the main reasons for the continuous increase in the use of pacemakers (PMs, implantable cardioverter-defibrillators (ICDs and devices for cardiac resynchronization therapy (CRT-P, CRT-D. The growing burden of comorbidities in CIED patients, the greater complexity of the devices, and the increased duration of procedures have led to an augmented risk of infections, which is out of proportion to the increase in implantation rate. CIED infections are an ominous condition, which often implies the necessity of hospitalization and carries an augmented risk of in-hospital death. Their clinical presentation may be either at pocket or at endocardial level, but they can also manifest themselves with lone bacteremia. The management of these infections requires the complete removal of the device and subsequent, specific, antibiotic therapy. CIED failures are monitored by competent public authorities, that require physicians to alert them to any failures, and that suggest the opportune strategies for their management. Although the replacement of all potentially affected devices is often suggested, common practice indicates the replacement of only a minority of devices, as close follow-up of the patients involved may be a safer strategy. Implantation of a PM or an ICD may cause problems in the patients' psychosocial adaptation and quality of life, and may contribute to the development of affective disorders. Clinicians are usually unaware of the psychosocial impact of implanted PMs and ICDs. The

  9. Base Metal Co-Fired Multilayer Piezoelectrics

    Lisheng Gao

    2016-03-01

    Full Text Available Piezoelectrics have been widely used in different kinds of applications, from the automobile industry to consumer electronics. The novel multilayer piezoelectrics, which are inspired by multilayer ceramic capacitors, not only minimize the size of the functional parts, but also maximize energy efficiency. Development of multilayer piezoelectric devices is at a significant crossroads on the way to achieving low costs, high efficiency, and excellent reliability. Concerning the costs of manufacturing multilayer piezoelectrics, the trend is to replace the costly noble metal internal electrodes with base metal materials. This paper discusses the materials development of metal co-firing and the progress of integrating current base metal chemistries. There are some significant considerations in metal co-firing multilayer piezoelectrics: retaining stoichiometry with volatile Pb and alkaline elements in ceramics, the selection of appropriate sintering agents to lower the sintering temperature with minimum impact on piezoelectric performance, and designing effective binder formulation for low pO2 burnout to prevent oxidation of Ni and Cu base metal.

  10. 77 FR 15390 - Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint...

    2012-03-15

    ... INTERNATIONAL TRADE COMMISSION [DN 2875] Certain Mobile Electronic Devices Incorporating Haptics.... International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received an amended complaint entitled Certain Mobile Electronic Devices...

  11. 78 FR 52211 - Certain Electronic Devices Having Placeshifting or Display Replication and Products Containing...

    2013-08-22

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having Placeshifting or Display Replication and Products Containing Same; Commission Determination Not To Review an... States after importation of certain electronic devices having placeshifting or display replication...

  12. 78 FR 34132 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    2013-06-06

    ... INTERNATIONAL TRADE COMMISSION [Docket No 2958] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Correction to Notice of Receipt of Complaint; Solicitation... of complaint entitled Certain Portable Electronic Communications Devices, Including Mobile Phones and...

  13. Electronic SSKIN pathway: reducing device-related pressure ulcers.

    Campbell, Natalie

    2016-08-11

    This article describes how an interprofessional project in a London NHS Foundation Trust was undertaken to develop an intranet-based medical device-related pressure ulcer prevention and management pathway for clinical staff working across an adult critical care directorate, where life-threatening events require interventions using medical devices. The aim of this project was to improve working policies and processes to define key prevention strategies and provide clinicians with a clear, standardised approach to risk and skin assessment, equipment use, documentation and reporting clinical data using the Trust's CareVue (electronic medical records), Datix (incident reporting and risk-management tool) and eTRACE (online clinical protocol ordering) systems. The process included the development, trial and local implementation of the pathway using collaborative teamwork and the SSKIN care bundle tool. The experience of identifying issues, overcoming challenges, defining best practice and cascading SSKIN awareness training is shared.

  14. Indium antimonide quantum well structures for electronic device applications

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

  15. Innovative soft magnetic multilayers with enhanced in-plane anisotropy and ferromagnetic resonance frequency for integrated RF passive devices

    Claudiu V. Falub

    2018-04-01

    Full Text Available We present an innovative, economical method for manufacturing soft magnetic materials that may pave the way for integrated thin film magnetic cores with dramatically improved properties. Soft magnetic multilayered thin films based on the Fe-28%Co20%B (at.% and Co-4.5%Ta4%Zr (at.% amorphous alloys are deposited on 8” bare Si and Si/200nm-thermal-SiO2 wafers in an industrial, high-throughput Evatec LLS EVO II magnetron sputtering system. The multilayers consist of stacks of alternating 80-nm-thick ferromagnetic layers and 4-nm-thick Al2O3 dielectric interlayers. Since in our dynamic sputter system the substrate cage rotates continuously, such that the substrates face different targets alternatively, each ferromagnetic sublayer in the multilayer consists of a fine structure comprising alternating CoTaZr and FeCoB nanolayers with very sharp interfaces. We adjust the thickness of these individual nanolayers between 0.5 and 1.5 nm by changing the cage rotation speed and the power of each gun, which is an excellent mode to engineer new, composite ferromagnetic materials. Using X-ray reflectometry (XRR we reveal that the interfaces between the FeCoB and CoTaZr nanolayers are perfectly smooth with roughness of 0.2-0.3 nm. Kerr magnetometry and B-H looper measurements for the as-deposited samples show that the coercivity of these thin films is very low, 0.2-0.3 Oe, and gradually scales up with the thickness of FeCoB nanolayers, i.e. with the increase of the overall Fe content from 0 % (e.g. CoTaZr-based multilayers to 52 % (e.g. FeCoB-based multilayers. We explain this trend in the random anisotropy model, based on considerations of grain size growth, as revealed by glancing angle X-ray diffraction (GAXRD, but also because of the increase of magnetostriction with the increase of Fe content as shown by B-H looper measurements performed on strained wafers. The unexpected enhancement of the in-plane anisotropy field from 18.3 Oe and 25.8 Oe for the

  16. Flexible organic electronic devices: Materials, process and applications

    Logothetidis, Stergios

    2008-01-01

    The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical sensors, as well as to a new generation of modern exotic applications. In this work, we report on some of the latest advances in the fields of polymeric substrates, hybrid barrier layers, inorganic and organic materials to be used as novel active and functional thin films and nanomaterials as well as for the encapsulation of the materials components for the production of FEDs (flexible organic light-emitting diodes, and organic photovoltaics). Moreover, we will emphasize on the real-time optical monitoring and characterization of the growing films onto the flexible polymeric substrates by spectroscopic ellipsometry methods. Finally, the potentiality for the in-line characterization processes for the development of organic electronics materials will be emphasized, since it will also establish the framework for the achievement of the future scientific and technological breakthroughs

  17. Analysis of patient setup accuracy using electronic portal imaging device

    Onogi, Yuzo; Aoki, Yukimasa; Nakagawa, Keiichi

    1996-01-01

    Radiation therapy is performed in many fractions, and accurate patient setup is very important. This is more significant nowadays because treatment planning and radiation therapy are more precisely performed. Electronic portal imaging devices and automatic image comparison algorithms let us analyze setup deviations quantitatively. With such in mind we developed a simple image comparison algorithm. Using 2459 electronic verification images (335 ports, 123 treatment sites) generated during the past three years at our institute, we evaluated the results of the algorithm, and analyzed setup deviations according to the area irradiated, use of a fixing device (shell), and arm position. Calculated setup deviation was verified visually and their fitness was classified into good, fair, bad, and incomplete. The result was 40%, 14%, 22%, 24% respectively. Using calculated deviations classified as good (994 images), we analyzed setup deviations. Overall setup deviations described in 1 SD along axes x, y, z, was 1.9 mm, 2.5 mm, 1.7 mm respectively. We classified these deviations into systematic and random components, and found that random error was predominant in our institute. The setup deviations along axis y (cranio-caudal direction) showed larger distribution when treatment was performed with the shell. Deviations along y (cranio-caudal) and z (anterior-posterior) had larger distribution when treatment occurred with the patient's arm elevated. There was a significant time-trend error, whose deviations become greater with time. Within all evaluated ports, 30% showed a time-trend error. Using an electronic portal imaging device and automatic image comparison algorithm, we are able to analyze setup deviations more precisely and improve setup method based on objective criteria. (author)

  18. Patient perspective on remote monitoring of cardiovascular implantable electronic devices

    Versteeg, H; Pedersen, Susanne S.; Mastenbroek, M H

    2014-01-01

    -implantation, other check-ups are performed remotely. Patients are asked to complete questionnaires at five time points during the 2-year follow-up. CONCLUSION: The REMOTE-CIED study will provide insight into the patient perspective on remote monitoring in ICD patients, which could help to support patient......BACKGROUND: Remote patient monitoring is a safe and effective alternative for the in-clinic follow-up of patients with cardiovascular implantable electronic devices (CIEDs). However, evidence on the patient perspective on remote monitoring is scarce and inconsistent. OBJECTIVES: The primary...

  19. EMC, RF, and Antenna Systems in Miniature Electronic Devices

    Ruaro, Andrea

    Advanced techniques for the control of electromagnetic interference (EMI) and for the optimization of the electromagnetic compatibility (EMC) performance has been developed under the constraints typical of miniature electronic devices (MED). The electromagnetic coexistence of multiple systems....... The structure allows for effective suppression of radiation from the MED, while taking into consideration the integration and miniaturization aspects. To increase the sensitivity of the system, a compact LNA suitable for on-body applications has been developed. The LNA allows for an increase in the overall...

  20. Electronic transport properties in [n]cycloparaphenylenes molecular devices

    Hu, Lizhi; Guo, Yandong; Yan, Xiaohong; Zeng, Hongli; Zhou, Jie

    2017-07-01

    The electronic transport of [n]cycloparaphenylenes ([n]CPPs) is investigated based on nonequilibrium Green's function formalism in combination with the density-functional theory. Negative differential resistance (NDR) phenomenon is observed. Further analysis shows that the reduction of the transmission peak induced by the bias changing near Fermi energy results in the NDR effect. Replacing the electrode (from carbon chain to Au electrode), doping with N atom and changing the size of the nanohoop (n = 5, 6, 8, 10) have also been studied and the NDR still exists, suggesting the NDR behavior is the intrinsic feature of such [n]CPPs systems, which would be quite useful in future nanoelectronic devices.

  1. 77 FR 24764 - Visual-Manual NHTSA Driver Distraction Guidelines for In-Vehicle Electronic Devices

    2012-04-25

    ...-0053] Visual-Manual NHTSA Driver Distraction Guidelines for In-Vehicle Electronic Devices AGENCY... proposed voluntary NHTSA Driver Distraction Guidelines for in-vehicle electronic devices. The agency... Driver Distraction Guidelines for in-vehicle electronic devices (77 FR 11200). The proposed NHTSA...

  2. Characterization of electronics devices for computed tomography dosimetry

    Paschoal, Cinthia Marques Magalhaes

    2012-01-01

    Computed tomography (CT) is an examination of high diagnostic capability that delivers high doses of radiation compared with other diagnostic radiological examinations. The current CT dosimetry is mainly made by using a 100 mm long ionization chamber. However, it was verified that this extension, which is intended to collect ali scattered radiation of the single slice dose profile in CT, is not enough. An alternative dosimetry has been suggested by translating smaller detectors. In this work, commercial electronics devices of small dimensions were characterized for CT dosimetry. The project can be divided in five parts: a) pre-selection of devices; b) electrical characterization of selected devices; e) dosimetric characterization in Iaboratory, using radiation qualities specific to CT, and in a tomograph; d) evaluation of the dose profile in CT scanner (free in air and in head and body dosimetric phantom); e) evaluation of the new MSAD detector in a tomograph. The selected devices were OP520 and OP521 phototransistors and BPW34FS photodiode. Before the dosimetric characterization, three configurations of detectors, with 4, 2 and 1 OP520 phototransistor working as a single detector, were evaluated and the configuration with only one device was the most adequate. Hence, the following tests, for all devices, were made using the configuration with only one device. The tests of dosimetric characterization in laboratory and in a tomograph were: energy dependence, response as a function of air kerma (laboratory) and CTDI 100 (scanner), sensitivity variation and angular dependence. In both characterizations, the devices showed some energy dependence, indicating the need of correction factors depending on the beam energy; their response was linear with the air kerma and the CTDI 100 ; the OP520 phototransistor showed the largest variation in sensitivity with the irradiation and the photodiode was the most stable; the angular dependence was significant in the laboratory and

  3. Passive direct methanol fuel cells for portable electronic devices

    Achmad, F.; Kamarudin, S.K.; Daud, W.R.W.; Majlan, E.H.

    2011-01-01

    Due to the increasing demand for electricity, clean, renewable energy resources must be developed. Thus, the objective of the present study was to develop a passive direct methanol fuel cell (DMFC) for portable electronic devices. The power output of six dual DMFCs connected in series with an active area of 4 cm 2 was approximately 600 mW, and the power density of the DMFCs was 25 mW cm -2 . The DMFCs were evaluated as a power source for mobile phone chargers and media players. The results indicated that the open circuit voltage of the DMFC was between 6.0 V and 6.5 V, and the voltage under operating conditions was 4.0 V. The fuel cell was tested on a variety of cell phone chargers, media players and PDAs. The cost of energy consumption by the proposed DMFC was estimated to be USD 20 W -1 , and the cost of methanol is USD 4 kW h. Alternatively, the local conventional electricity tariff is USD 2 kW h. However, for the large-scale production of electronic devices, the cost of methanol will be significantly lower. Moreover, the electricity tariff is expected to increase due to the constraints of fossil fuel resources and pollution. As a result, DMFCs will become competitive with conventional power sources.

  4. Observation of molecular level behavior in molecular electronic junction device

    Maitani, Masato

    In this dissertation, I utilize AFM based scanning probe measurement and surface enhanced Raman scattering based vibrational spectroscopic analysis to directly characterize topographic, electronic, and chemical properties of molecules confined in the local area of M3 junction to elucidate the molecular level behavior of molecular junction electronic devices. In the introduction, the characterization of molecular electronic devices with different types of metal-molecule-metal (M3) structures based upon self-assembled monolayers (SAMs) is reviewed. A background of the characterization methods I use in this dissertation, conducting probe atomic force microscopy (cp-AFM) and surface enhanced Raman spectroscopy (SERS), is provided in chapter 1. Several attempts are performed to create the ideal top metal contacts on SAMs by metal vapor phase deposition in order to prevent the metal penetration inducing critical defects of the molecular electronic devices. The scanning probe microscopy (SPM), such as cp-AFM, contact mode (c-) AFM and non-contact mode (nc-) AFM, in ultra high vacuum conditions are utilized to study the process of the metal-SAM interface construction in terms of the correlation between the morphological and electrical properties including the metal nucleation and filament generation as a function of the functionalization of long-chain alkane thiolate SAMs on Au. In chapter 2, the nascent condensation process of vapor phase Al deposition on inert and reactive SAMs are studied by SPM. The results of top deposition, penetration, and filament generation of deposited Al are discussed and compared to the results previously observed by spectroscopic measurements. Cp-AFM was shown to provide new insights into Al filament formation which has not been observed by conventional spectroscopic analysis. Additionally, the electronic characteristics of individual Al filaments are measured. Chapter 3 reveals SPM characterization of Au deposition onto --COOH terminated SAMs

  5. Electron/pion identification in the CBM TRD using a multilayer perceptron

    Akishina, E.P.; Akishina, T.P.; Ivanov, V.V.; Maevskaya, A.I.; Afanas'ev, O.A.

    2008-01-01

    The problem of electron/pion identification in the CBM experiment based on the measurements of energy losses and transition radiation in the TRD detector is discussed. A possibility to solve such a problem by applying an artificial neural network (ANN) is considered. As input information for the network we used both the samples of energy losses of pions or electrons in the TRD absorbers and the 'clever' variable obtained on the basis of the original data. We show that usage of this new variable permits one to reach a reliable level of particle recognition no longer than after 10-20 training epochs; there are practically no fluctuations against the trend, and the needed level of pions suppression is obtained under the condition of a minimal loss of electrons

  6. Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

    Carlisle, J.A.; Chaiken, A.; Michel, R.P. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system.

  7. Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

    Carlisle, J.A.; Chaiken, A.; Michel, R.P.

    1997-01-01

    Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system

  8. Simulation of the passive UHF devices on the basis of high-temperature superconductors for planar multilayer anisotropic structures

    Gashinova, M S; Kolmakov, Y A; Vendik, I B

    2002-01-01

    The electrodynamic analysis of the arbitrary multilayer medium, including the anisotropic layers and containing the arbitrary form conductors is carried out. Thin layers of the high-temperature superconductor (HTSC) are considered as conductors. Determination of the surface current density is a result of the numerical solution. Accounting for the losses in the HTSC is accomplished on the basis of determining the equivalent surface impedance and using the Leontovich boundary conditions. Anisotropy is accounted for in the determination of the Green spectral dyad for the structure with arbitrary number of the anisotropic or isotropic layers. Calculation of the surface current density distribution demonstrates the correctness of the proposed model

  9. Optimization of TiO2/Cu/TiO2 multilayers as a transparent composite electrode deposited by electron-beam evaporation at room temperature

    Sun, Hong-Tao; Wang, Xiao-Ping; Kou, Zhi-Qi; Wang, Li-Jun; Wang, Jin-Ye; Sun, Yi-Qing

    2015-04-01

    Highly transparent indium-free composite electrodes of TiO2/Cu/TiO2 are deposited by electron-beam evaporation at room temperature. The effects of Cu thickness and annealing temperature on the electrical and optical properties of the multilayer film are investigated. The critical thickness of Cu mid-layer to form a continuous conducting layer is found to be 11 nm. The multilayer with a mid-Cu thickness of 11 nm is optimized to obtain a resistivity of 7.4×10-5 Ω·cm and an average optical transmittance of 86% in the visible spectral range. The figure of merit of the TiO2/Cu(11 nm)/TiO2 multilayer annealed at 150 °C reaches a minimum resistivity of 5.9×10-5 Ω·cm and an average optical transmittance of 88% in the visible spectral range. The experimental results indicate that TiO2/Cu/TiO2 multilayers can be used as a transparent electrode for solar cell and other display applications. Project supported by the Research Innovation Key Project of Education Committee of Shanghai, China (Grant No. 14ZZ137) and the National Cultivation Fund from University of Shanghai for Science and Technology (Grant No. 14XPM04).

  10. Theoretical modeling of electronic transport in molecular devices

    Piccinin, Simone

    In this thesis a novel approach for simulating electronic transport in nanoscale structures is introduced. We consider an open quantum system (the electrons of structure) accelerated by an external electromotive force and dissipating energy through inelastic scattering with a heat bath (phonons) acting on the electrons. This method can be regarded as a quantum-mechanical extension of the semi-classical Boltzmann transport equation. We use periodic boundary conditions and employ Density Functional Theory to recast the many-particle problem in an effective single-particle mean-field problem. By explicitly treating the dissipation in the electrodes, the behavior of the potential is an outcome of our method, at variance with the scattering approaches based on the Landauer formalism. We study the self-consistent steady-state solution, analyzing the out-of-equilibrium electron distribution, the electrical characteristics, the behavior of the self-consistent potential and the density of states of the system. We apply the method to the study of electronic transport in several molecular devices, consisting of small organic molecules or atomic wires sandwiched between gold surfaces. For gold wires we recover the experimental evidence that transport in short wires is ballistic, independent of the length of the wire and with conductance of one quantum. In benzene-1,4-dithiol we find that the delocalization of the frontier orbitals of the molecule is responsible for the high value of conductance and that, by inserting methylene groups to decouple the sulfur atoms from the carbon ring, the current is reduced, in agreement with the experimental measurements. We study the effect a geometrical distortion in a molecular device, namely the relative rotation of the carbon rings in a biphenyl-4,4'-dithiol molecule. We find that the reduced coupling between pi orbitals of the rings induced by the rotation leads to a reduction of the conductance and that this behavior is captured by a

  11. Realization of ultrathin silver layers in highly conductive and transparent zinc tin oxide/silver/zinc tin oxide multilayer electrodes deposited at room temperature for transparent organic devices

    Winkler, Thomas; Schmidt, Hans; Fluegge, Harald; Nikolayzik, Fabian; Baumann, Ihno; Schmale, Stephan; Johannes, Hans-Hermann; Rabe, Torsten [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany); Hamwi, Sami, E-mail: sami.hamwi@ihf.tu-bs.de [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany); Riedl, Thomas [Institute of Electronic Devices, Bergische Universitaet Wuppertal, Rainer-Gruenter Str. 21, 42119 Wuppertal (Germany); Kowalsky, Wolfgang [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany)

    2012-05-01

    We report on transparent and highly conductive multilayer electrodes prepared at room temperature by RF sputtering of zinc tin oxide (ZTO) and thermal evaporation of ultrathin silver (Ag) as top contact for transparent organic light emitting diodes (TOLED). Specifically, we study the morphological, electrical and optical properties of the multilayer structure in particular of the thin Ag film. The tendency of Ag to form agglomerates over time on top of ZTO is shown by atomic force microscopy. From the optical constants derived from ellipsometric measurements we evidenced a bulk like behavior of an Ag film with a thickness of 8 nm embedded in ZTO leading to a low sheet resistance of 9 {Omega}/sq. Furthermore we verify the optical constants by simulation of an optimized ZTO/Ag/ZTO structure. As an application we present a highly efficient TOLED providing a device transmittance of > 82% in the visible part of the spectrum. The TOLED shows no damage caused by sputtering on a lighting area of 80 mm{sup 2} and exhibits efficiencies of 43 cd/A and 36 lm/W.

  12. Recent progress in printed 2/3D electronic devices

    Klug, Andreas; Patter, Paul; Popovic, Karl; Blümel, Alexander; Sax, Stefan; Lenz, Martin; Glushko, Oleksandr; Cordill, Megan J.; List-Kratochvil, Emil J. W.

    2015-09-01

    New, energy-saving, efficient and cost-effective processing technologies such as 2D and 3D inkjet printing (IJP) for the production and integration of intelligent components will be opening up very interesting possibilities for industrial applications of molecular materials in the near future. Beyond the use of home and office based printers, "inkjet printing technology" allows for the additive structured deposition of photonic and electronic materials on a wide variety of substrates such as textiles, plastics, wood, stone, tiles or cardboard. Great interest also exists in applying IJP in industrial manufacturing such as the manufacturing of PCBs, of solar cells, printed organic electronics and medical products. In all these cases inkjet printing is a flexible (digital), additive, selective and cost-efficient material deposition method. Due to these advantages, there is the prospect that currently used standard patterning processes can be replaced through this innovative material deposition technique. A main issue in this research area is the formulation of novel functional inks or the adaptation of commercially available inks for specific industrial applications and/or processes. In this contribution we report on the design, realization and characterization of novel active and passive inkjet printed electronic devices including circuitry and sensors based on metal nanoparticle ink formulations and the heterogeneous integration into 2/3D printed demonstrators. The main emphasis of this paper will be on how to convert scientific inkjet knowledge into industrially relevant processes and applications.

  13. Electronic structure and superconductivity of multi-layered organic charge transfer salts

    Jeschke, Harald O.; Altmeyer, Michaela; Guterding, Daniel; Valenti, Roser [Institut fuer Theoretische Physik, Goethe-Universitaet Frankfurt, 60438 Frankfurt (Germany)

    2015-07-01

    We examine the electronic properties of polymorphs of (BEDT-TTF){sub 2}Ag(CF{sub 3}){sub 4}(TCE) (1,1,2-trichloroethane) within density functional theory (DFT). While a phase with low superconducting transition temperature T{sub c}=2.6 K exhibits a κ packing motif, two high T{sub c} phases are layered structures consisting of α{sup '} and κ packed layers. We determine the electronic structures and discuss the influence of the insulating α{sup '} layer on the conducting κ layer. In the κ-α{sub 1}{sup '} dual-layered compound, we find that the stripes of high and low charge in the α{sup '} layer correspond to a stripe pattern of hopping parameters in the κ layer. Based on the different underlying Hamiltonians, we study the superconducting properties and try to explain the differences in T{sub c}.

  14. Analytical thermal modelling of multilayered active embedded chips into high density electronic board

    Monier-Vinard Eric

    2013-01-01

    Full Text Available The recent Printed Wiring Board embedding technology is an attractive packaging alternative that allows a very high degree of miniaturization by stacking multiple layers of embedded chips. This disruptive technology will further increase the thermal management challenges by concentrating heat dissipation at the heart of the organic substrate structure. In order to allow the electronic designer to early analyze the limits of the power dissipation, depending on the embedded chip location inside the board, as well as the thermal interactions with other buried chips or surface mounted electronic components, an analytical thermal modelling approach was established. The presented work describes the comparison of the analytical model results with the numerical models of various embedded chips configurations. The thermal behaviour predictions of the analytical model, found to be within ±10% of relative error, demonstrate its relevance for modelling high density electronic board. Besides the approach promotes a practical solution to study the potential gain to conduct a part of heat flow from the components towards a set of localized cooled board pads.

  15. Metastable State Diamond Growth and its Applications to Electronic Devices.

    Jeng, David Guang-Kai

    Diamond which consists of a dense array of carbon atoms joined by strong covalent bonds and formed into a tetrahedral crystal structure has remarkable mechanical, thermal, optical and electrical properties suitable for many industrial applications. With a proper type of doping, diamond is also an ideal semiconductor for high performance electronic devices. Unfortunately, natural diamond is rare and limited by its size and cost, it is not surprising that people continuously look for a synthetic replacement. It was believed for long time that graphite, another form of carbon, may be converted into diamond under high pressure and temperature. However, the exact condition of conversion was not clear. In 1939, O. I. Leipunsky developed an equilibrium phase diagram between graphite and diamond based on thermodynamic considerations. In the phase diagram, there is a low temperature (below 1000^ circC) and low pressure (below 1 atm) region in which diamond is metastable and graphite is stable, therefore establishes the conditions for the coexistence of the two species. Leipunsky's pioneer work opened the door for diamond synthesis. In 1955, the General Electric company (GE) was able to produce artificial diamond at 55k atm pressure and a temperature of 2000^ circC. Contrary to GE, B. Derjaguin and B. V. Spitzyn in Soviet Union, developed a method of growing diamonds at 1000^circC and at a much lower pressure in 1956. Since then, researchers, particularly in Soviet Union, are continuously looking for methods to grow diamond and diamond film at lower temperatures and pressures with slow but steady progress. It was only in the early 80's that the importance of growing diamond films had attracted the attentions of researchers in the Western world and in Japan. Recent progress in plasma physics and chemical vapor deposition techniques in integrated electronics technology have pushed the diamond growth in its metastable states into a new era. In this research, a microwave plasma

  16. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

    2011-01-01

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

  17. Electron cyclotron beam measurement system in the Large Helical Device

    Kamio, S., E-mail: kamio@nifs.ac.jp; Takahashi, H.; Kubo, S.; Shimozuma, T.; Yoshimura, Y.; Igami, H.; Ito, S.; Kobayashi, S.; Mizuno, Y.; Okada, K.; Osakabe, M.; Mutoh, T. [National Institute for Fusion Science, Toki 509-5292 (Japan)

    2014-11-15

    In order to evaluate the electron cyclotron (EC) heating power inside the Large Helical Device vacuum vessel and to investigate the physics of the interaction between the EC beam and the plasma, a direct measurement system for the EC beam transmitted through the plasma column was developed. The system consists of an EC beam target plate, which is made of isotropic graphite and faces against the EC beam through the plasma, and an IR camera for measuring the target plate temperature increase by the transmitted EC beam. This system is applicable to the high magnetic field (up to 2.75 T) and plasma density (up to 0.8 × 10{sup 19} m{sup −3}). This system successfully evaluated the transmitted EC beam profile and the refraction.

  18. Software to manage transformers using intelligent electronic device

    Marcio Zamboti Fortes

    2016-01-01

    Full Text Available Power companies usually answer the increase in power demand by building new generation facilities. Nevertheless, an efficient use of energy could reduce and delay the costs of investment in new power plants. This paper shows a software system to manage transformers and evaluate losses when they work with zero loads. This system contributes to reduce the waste of energy with some simple actions such as shutting off an unused transformer or reconnecting disabled equipment based on the customer’s demand. It uses real time measurements collected from Intelligent Electronic Devices as a base for software decisions. It also measures and reports the total power saving.

  19. Ultralarge area MOS tunnel devices for electron emission

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  20. Metallization of bacterial cellulose for electrical and electronic device manufacture

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  1. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    Chen, L.L.; Li, W.L.; Li, M.T.; Chu, B.

    2007-01-01

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m 2 at 8 V. At a luminance of 100 cd/m 2 , the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V oc ) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm 2 . And the short-circuit current (I sc ) of 92.5x10 -6 A/cm 2 , fill factor (FF) of 0.30 and power conversion efficiency (η e ) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices

  2. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    Chen, L.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun, 130024 (China); Li, W.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)]. E-mail: wllioel@yahoo.com.cn; Li, M.T. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Chu, B. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)

    2007-01-15

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m{sup 2} at 8 V. At a luminance of 100 cd/m{sup 2}, the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V {sub oc}) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm{sup 2}. And the short-circuit current (I {sub sc}) of 92.5x10{sup -6} A/cm{sup 2}, fill factor (FF) of 0.30 and power conversion efficiency ({eta} {sub e}) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices.

  3. 78 FR 1247 - Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media...

    2013-01-08

    ... Wireless Communication Devices, Tablet Computers, Media Players, and Televisions, and Components Thereof... devices, including wireless communication devices, tablet computers, media players, and televisions, and... wireless communication devices, tablet computers, media players, and televisions, and components thereof...

  4. Electronics Related to Nuclear Medicine Imaging Devices. Chapter 7

    Ott, R. J. [Joint Department of Physics, Royal Marsden Hospital and Institute of Cancer Research, Surrey (United Kingdom); Stephenson, R. [Rutherford Appleton Laboratory, Oxfordshire (United Kingdom)

    2014-12-15

    Nuclear medicine imaging is generally based on the detection of X rays and γ rays emitted by radionuclides injected into a patient. In the previous chapter, the methods used to detect these photons were described, based most commonly on a scintillation counter although there are imaging devices that use either gas filled ionization detectors or semiconductors. Whatever device is used, nuclear medicine images are produced from a very limited number of photons, due mainly to the level of radioactivity that can be safely injected into a patient. Hence, nuclear medicine images are usually made from many orders of magnitude fewer photons than X ray computed tomography (CT) images, for example. However, as the information produced is essentially functional in nature compared to the anatomical detail of CT, the apparently poorer image quality is overcome by the nature of the information produced. The low levels of photons detected in nuclear medicine means that photon counting can be performed. Here each photon is detected and analysed individually, which is especially valuable, for example, in enabling scattered photons to be rejected. This is in contrast to X ray imaging where images are produced by integrating the flux entering the detectors. Photon counting, however, places a heavy burden on the electronics used for nuclear medicine imaging in terms of electronic noise and stability. This chapter will discuss how the signals produced in the primary photon detection process can be converted into pulses providing spatial, energy and timing information, and how this information is used to produce both qualitative and quantitative images.

  5. How people with cognitive disabilities experience electronic planning devices.

    Adolfsson, Päivi; Lindstedt, Helena; Janeslätt, Gunnel

    2015-01-01

    People with cognitive disabilities have difficulties in accomplishing everyday tasks. Electronic planning devices (EPDs) may compensate for the gap between a person's capacity and everyday challenges. However, the devices are not always used as intended. Despite that, cognitive assistive technology has been investigated in several studies, knowledge regarding when and what makes adults decide to use EPDs is incomplete. The aim was to explore the subjective experiences of people with cognitive disabilities in relation to the use of EPDs. A qualitative approach was applied with a qualitative content analysis. Twelve respondents were interviewed with support from a study specific guide. A model representing the respondents' experiences in the use of EPDs, comprising one theme, Possibility to master my daily life, four categories, Degree of fit to my needs, I am aware of my cognitive disability, I get help to structure my everyday life and The EPD improves my volition and ten subcategories, was developed. EPDs allow people with cognitive disabilities the possibility to deal with daily challenges; those who find EPDs beneficial tend to use them. EPDs can help people with cognitive disabilities in organisation, managing time and improve volition.

  6. Determining Hermeticity of Electron Devices by Dye Penetration

    American Society for Testing and Materials. Philadelphia

    1972-01-01

    1.1 These practices cover procedures that will normally detect and locate the sites of gross leaks in electron devices. 1.2 These procedures are suitable for use on selected parts during receiving inspection or to verify and locate leakage sites for production control. They are not quantitative; no indication of leak size can be inferred from the test. 1.3 These procedures are most suitable for use on transparent glass-encased devices; all methods are applicable to transparent parts with an internal cavity. Method A, Penetrant-Capillary, is also applicable to parts, such as terminals, end seals or base assemblies, without an internal cavity, and Method C, Penetrant-Pressure Followed by Vacuum, can be used on opaque parts with an internal cavity. Method B, Penetrant-Pressure, can also be used on opaque parts with an internal cavity if the part is opened after dye penetration and before inspection. Parts that have an internal cavity may either contain gas (such as air, nitrogen, nitrogen-helium mixture, etc.) o...

  7. Electronic and optoelectronic materials and devices inspired by nature

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  8. Magnetic multilayers and giant magnetoresistance fundamentals and industrial applications

    2000-01-01

    Magneto-electronics is certainly one of the most rapidly expanding fields in basic research and industrial application. Magnetic multilayers are the key devices in this field; they allow the utilization of unique micromagnetic, magneto-optic, and magneto-electronic phenomena which cannot be realized on the basis of conventional materials. This book provides a detailed and well-balanced introduction to both the underlying physical fundamentals and the technological applications in terms of devices that are just entering the market or are of high industrial relevance for the near future. In particular, the employment of magnetic multilayers in magneto-optical recording, in GMR and spin-valve devices, and as configurations yielding a striking nonlinear magneto-optical response is discussed in a comprehensive way. This state-of-the-art review involves an extensive list of key references to original work and thus makes the vast knowledge already accumulated in the field accessible to the reader.

  9. Metal-Organic Frameworks as Active Materials in Electronic Sensor Devices.

    Campbell, Michael G; Dincă, Mircea

    2017-05-12

    In the past decade, advances in electrically conductive metal-organic frameworks (MOFs) and MOF-based electronic devices have created new opportunities for the development of next-generation sensors. Here we review this rapidly-growing field, with a focus on the different types of device configurations that have allowed for the use of MOFs as active components of electronic sensor devices.

  10. High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

    Galanakis, I.

    2015-03-01

    Half-metallic Co2MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co2MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co2MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices.

  11. Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

    Enoki, Toshiaki; Kiguchi, Manabu

    2018-03-01

    Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

  12. Prospective clinical evaluation of an electronic portal imaging device

    Michalski, Jeff M.; Graham, Mary V.; Bosch, Walter R.; Wong, John; Gerber, Russell L.; Cheng, Abel; Tinger, Alfred; Valicenti, Richard K.

    1996-01-01

    Purpose: To determine whether the clinical implementation of an electronic portal imaging device can improve the precision of daily external beam radiotherapy. Methods and Materials: In 1991, an electronic portal imaging device was installed on a dual energy linear accelerator in our clinic. After training the radiotherapy technologists in the acquisition and evaluation of portal images, we performed a randomized study to determine whether online observation, interruption, and intervention would result in more precise daily setup. The patients were randomized to one of two groups: those whose treatments were actively monitored by the radiotherapy technologists and those that were imaged but not monitored. The treating technologists were instructed to correct the following treatment errors: (a) field placement error (FPE) > 1 cm; (b) incorrect block; (c) incorrect collimator setting; (d) absent customized block. Time of treatment delivery was recorded by our patient tracking and billing computers and compared to a matched set of patients not participating in the study. After the patients radiation therapy course was completed, an offline analysis of the patient setup error was planned. Results: Thirty-two patients were treated to 34 anatomical sites in this study. In 893 treatment sessions, 1,873 fields were treated (1,089 fields monitored and 794 fields unmonitored). Ninety percent of the treated fields had at least one image stored for offline analysis. Eighty-seven percent of these images were analyzed offline. Of the 1,011 fields imaged in the monitored arm, only 14 (1.4%) had an intervention recorded by the technologist. Despite infrequent online intervention, offline analysis demonstrated that the incidence of FPE > 10 mm in the monitored and unmonitored groups was 56 out of 881 (6.1%) and 95 out of 595 (11.2%), respectively; p 10 mm was confined to the pelvic fields. The time to treat patients in this study was 10.78 min (monitored) and 10.10 min (unmonitored

  13. Compositionally Graded Multilayer Ceramic Capacitors.

    Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

    2017-09-27

    Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (filters and power converters.

  14. Adsorption and photocatalytic activity of electron-irradiated polystyrene nanosphere multi-layer film

    Cho, Sung Oh; Yoo, Seung Hwa; Kim, Jea Joon; Kum, Jong Min

    2012-01-01

    production from water, after the first report of poly(p-phenylene) (PPP) in 1990. Both of these work shows enhanced activity by incorporating a co-catalyst. However, to date, there is no reported literature about single material organic photocatalyst for removal of organic pollutant from water. In this paper, we present a novel low-cost, metal-free organic photocatalyst that consists of only carbon and hydrogen fabricated by electron-beam irradiation on polymer nanospheres. Characterization results and adsorption-photocatalytic activities are shown of electron-irradiated polystyrene (PS) nanospheres

  15. Water equivalent thickness of immobilization devices in proton therapy planning - Modelling at treatment planning and validation by measurements with a multi-layer ionization chamber.

    Fellin, Francesco; Righetto, Roberto; Fava, Giovanni; Trevisan, Diego; Amelio, Dante; Farace, Paolo

    2017-03-01

    To investigate the range errors made in treatment planning due to the presence of the immobilization devices along the proton beam path. The measured water equivalent thickness (WET) of selected devices was measured by a high-energy spot and a multi-layer ionization chamber and compared with that predicted by treatment planning system (TPS). Two treatment couches, two thermoplastic masks (both un-stretched and stretched) and one headrest were selected. At TPS, every immobilization device was modelled as being part of the patient. The following parameters were assessed: CT acquisition protocol, dose-calculation grid-sizes (1.5 and 3.0mm) and beam-entrance with respect to the devices (coplanar and non-coplanar). Finally, the potential errors produced by a wrong manual separation between treatment couch and the CT table (not present during treatment) were investigated. In the thermoplastic mask, there was a clear effect due to beam entrance, a moderate effect due to the CT protocols and almost no effect due to TPS grid-size, with 1mm errors observed only when thick un-stretched portions were crossed by non-coplanar beams. In the treatment couches the WET errors were negligible (0.5mm with a 3.0mm grid-size. In the headrest, WET errors were negligible (0.2mm). With only one exception (un-stretched mask, non-coplanar beams), the WET of all the immobilization devices was properly modelled by the TPS. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  16. Effect of interior geometry on local climate inside an electronic device enclosure

    Joshy, Salil; Jellesen, Morten Stendahl; Ambat, Rajan

    2017-01-01

    Electronic enclosure design and the internal arrangement of PCBs and components influence microclimate inside the enclosure. This work features a general electronic unit with parallel PCBs. One of the PCB is considered to have heat generating components on it. The humidity and temperature profiles...... geometry of the device and related enclosure design parameters on the humidity and temperature profiles inside the electronic device enclosure....

  17. 76 FR 72439 - Certain Consumer Electronics and Display Devices and Products Containing Same; Receipt of...

    2011-11-23

    ... INTERNATIONAL TRADE COMMISSION [DN 2858] Certain Consumer Electronics and Display Devices and.... International Trade Commission has received a complaint entitled In Re Certain Consumer Electronics and Display... importation of certain consumer electronics and display devices and products containing same. The complaint...

  18. 77 FR 14422 - Certain Consumer Electronics and Display Devices and Products Containing Same; Notice of Receipt...

    2012-03-09

    ... INTERNATIONAL TRADE COMMISSION [DN 2882] Certain Consumer Electronics and Display Devices and... the U.S. International Trade Commission has received a complaint entitled Certain Consumer Electronics... importation of certain consumer electronics and display devices and products containing same. The complaint...

  19. Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

    Porrati, F.; Sachser, R.; Huth, M. [Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany); Gazzadi, G. C. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); Frabboni, S. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); FIM Department, University of Modena and Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy)

    2016-06-21

    Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.

  20. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  1. Molecular self-assembly approaches for supramolecular electronic and organic electronic devices

    Yip, Hin-Lap

    Molecular self-assembly represents an efficient bottom-up strategy to generate structurally well-defined aggregates of semiconducting pi-conjugated materials. The capability of tuning the chemical structures, intermolecular interactions and nanostructures through molecular engineering and novel materials processing renders it possible to tailor a large number of unprecedented properties such as charge transport, energy transfer and light harvesting. This approach does not only benefit traditional electronic devices based on bulk materials, but also generate a new research area so called "supramolecular electronics" in which electronic devices are built up with individual supramolecular nanostructures with size in the sub-hundred nanometers range. My work combined molecular self-assembly together with several novel materials processing techniques to control the nucleation and growth of organic semiconducting nanostructures from different type of pi-conjugated materials. By tailoring the interactions between the molecules using hydrogen bonds and pi-pi stacking, semiconducting nanoplatelets and nanowires with tunable sizes can be fabricated in solution. These supramolecular nanostructures were further patterned and aligned on solid substrates through printing and chemical templating methods. The capability to control the different hierarchies of organization on surface provides an important platform to study their structural-induced electronic properties. In addition to using molecular self-assembly to create different organic nanostructures, functional self-assembled monolayer (SAM) formed by spontaneous chemisorption on surfaces was used to tune the interfacial property in organic solar cells. Devices showed dramatically improved performance when appropriate SAMs were applied to optimize the contact property for efficiency charge collection.

  2. High spin-polarization in ultrathin Co{sub 2}MnSi/CoPd multilayers

    Galanakis, I., E-mail: galanakis@upatras.gr

    2015-03-01

    Half-metallic Co{sub 2}MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co{sub 2}MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co{sub 2}MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co{sub 2}MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices.

  3. High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

    Galanakis, I.

    2015-01-01

    Half-metallic Co 2 MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co 2 MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co 2 MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co 2 MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices

  4. Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

    Qi, Jingshan; Li, Xiao; Qian, Xiaofeng

    2016-01-01

    Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z_2 invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

  5. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

    Shojan P. Pavunny

    2014-03-01

    Full Text Available A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS, bipolar (Bi and BiCMOS chips applications, is presented in this review article.

  6. Electronic and optoelectronic materials and devices inspired by nature

    Meredith, P; Schwenn, P E; Bettinger, C J; Irimia-Vladu, M; Mostert, A B

    2013-01-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist. (review article)

  7. Thermoelectric air-cooling module for electronic devices

    Chang, Yu-Wei; Chang, Chih-Chung; Ke, Ming-Tsun; Chen, Sih-Li

    2009-01-01

    This article investigates the thermoelectric air-cooling module for electronic devices. The effects of heat load of heater and input current to thermoelectric cooler are experimentally determined. A theoretical model of thermal analogy network is developed to predict the thermal performance of the thermoelectric air-cooling module. The result shows that the prediction by the model agrees with the experimental data. At a specific heat load, the thermoelectric air-cooling module reaches the best cooling performance at an optimum input current. In this study, the optimum input currents are from 6 A to 7 A at the heat loads from 20 W to 100 W. The result also demonstrates that the thermoelectric air-cooling module performs better performance at a lower heat load. The lowest total temperature difference-heat load ratio is experimentally estimated as -0.54 W K -1 at the low heat load of 20 W, while it is 0.664 W K -1 at the high heat load of 100 W. In some conditions, the thermoelectric air-cooling module performs worse than the air-cooling heat sink only. This article shows the effective operating range in which the cooling performance of the thermoelectric air-cooling module excels that of the air-cooling heat sink only.

  8. Characterization of high Tc materials and devices by electron microscopy

    Browning, Nigel D; Pennycook, Stephen J

    2000-01-01

    ..., and microanalysis by scanning transmission electron microscopy. Ensuing chapters examine identi®cation of new superconducting compounds, imaging of superconducting properties by lowtemperature scanning electron microscopy, imaging of vortices by electron holography and electronic structure determination by electron energy loss spectro...

  9. X-ray diffraction and high resolution transmission electron microscopy characterization of intermetallics formed in Fe/Ti nanometer-scale multilayers during thermal annealing

    Wu, Z.L.; Peng, T.X.; Cao, B.S.; Lei, M.K.

    2009-01-01

    Intermetallics formation in the Fe/Ti nanometer-scale multilayers magnetron-sputtering deposited on Si(100) substrate during thermal annealing at 623-873 K was investigated by using small and wide angle X-ray diffraction and cross-sectional high-resolution transmission electron microscopy. The Fe/Ti nanometer-scale multilayers were constructed with bilayer thickness of 16.2 nm and the sublayer thickness ratio of 1:1. At the annealing temperature of 623 K, intermetallics FeTi were formed by nucleation at the triple joins of α-Fe(Ti)/α-Ti interface and α-Ti grain boundary with an orientational correlation of FeTi(110)//α-Ti(100) and FeTi[001]//α-Ti[001] to adjacent α-Ti grains. The lateral growth of intermetallics FeTi which is dependent on the diffusion path of Ti led to a coalescence into an intermetallic layer. With an increase in the annealing temperature, intermetallics Fe 2 Ti were formed between the intermetallics FeTi and the excess Fe due to the limitation of Fe and Ti atomic concentrations, resulting in the coexistence of intermetallics FeTi and Fe 2 Ti. It was found that the low energy interface as well as the dominant diffusion path constrained the nucleation and growth of intermetallics during interfacial reaction in the nanometer-scale metallic multilayers.

  10. Graphene Electronic Device Based Biosensors and Chemical Sensors

    Jiang, Shan

    Two-dimensional layered materials, such as graphene and MoS2, are emerging as an exciting material system for a new generation of atomically thin electronic devices. With their ultrahigh surface to volume ratio and excellent electrical properties, 2D-layered materials hold the promise for the construction of a generation of chemical and biological sensors with unprecedented sensitivity. In my PhD thesis, I mainly focus on graphene based electronic biosensors and chemical sensors. In the first part of my thesis, I demonstrated the fabrication of graphene nanomesh (GNM), which is a graphene thin film with a periodic array of holes punctuated in it. The periodic holes introduce long periphery active edges that provide a high density of functional groups (e.g. carboxylic groups) to allow for covalent grafting of specific receptor molecules for chemical and biosensor applications. After covalently functionalizing the GNM with glucose oxidase, I managed to make a novel electronic sensor which can detect glucose as well as pH change. In the following part of my thesis I demonstrate the fabrication of graphene-hemin conjugate for nitric oxide detection. The non-covalent functionalization through pi-pi stacking interaction allows reliable immobilization of hemin molecules on graphene without damaging the graphene lattice to ensure the highly sensitive and specific detection of nitric oxide. The graphene-hemin nitric oxide sensor is capable of real-time monitoring of nitric oxide concentrations, which is of central importance for probing the diverse roles of nitric oxide in neurotransmission, cardiovascular systems, and immune responses. Our studies demonstrate that the graphene-hemin sensors can respond rapidly to nitric oxide in physiological environments with sub-nanomolar sensitivity. Furthermore, in vitro studies show that the graphene-hemin sensors can be used for the detection of nitric oxide released from macrophage cells and endothelial cells, demonstrating their

  11. Self-amplified spontaneous emission free electron laser devices and nonideal electron beam transport

    L. L. Lazzarino

    2014-11-01

    Full Text Available We have developed, at the SPARC test facility, a procedure for a real time self-amplified spontaneous emission free electron laser (FEL device performance control. We describe an actual FEL, including electron and optical beam transport, through a set of analytical formulas, allowing a fast and reliable on-line “simulation” of the experiment. The system is designed in such a way that the characteristics of the transport elements and the laser intensity are measured and adjusted, via a real time computation, during the experimental run, to obtain an on-line feedback of the laser performances. The detail of the procedure and the relevant experimental results are discussed.

  12. Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

    Renault, O.; Martinez, E.; Zborowski, C.

    2018-01-01

    Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various...

  13. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Mesta, M.; van Eersel, H.; Coehoorn, R.; Bobbert, P.A.

    2016-01-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance

  14. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  15. The Effect of Electronic Devices Self-Efficacy, Electronic Devices Usage and Information Security Awareness on Identity-Theft Anxiety Level

    Sanga, Sushma

    2016-01-01

    Identity-theft means stealing someone's personal information and using it without his or her permission. Each year, millions of Americans are becoming the victims of identity-theft, and this is one of the seriously growing and widespread issues in the U.S. This study examines the effect of electronic devices self-efficacy, electronic devices…

  16. 77 FR 27078 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    2012-05-08

    ... Phones and Tablet Computers, and Components Thereof; Notice of Receipt of Complaint; Solicitation of... entitled Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... the United States after importation of certain electronic devices, including mobile phones and tablet...

  17. 77 FR 31875 - Certain Electronic Imaging Devices; Notice of Receipt of Complaint; Solicitation of Comments...

    2012-05-30

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2898] Certain Electronic Imaging Devices; Notice of... Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Electronic Imaging Devices, DN 2898; the Commission is...

  18. 77 FR 32995 - Certain Electronic Imaging Devices Corrected: Notice of Receipt of Complaint; Solicitation of...

    2012-06-04

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2898] Certain Electronic Imaging Devices Corrected.... International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Electronic Imaging Devices, DN 2898; the...

  19. 78 FR 73563 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    2013-12-06

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having... AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has issued (1) a limited exclusion order against infringing electronic devices...

  20. 77 FR 31876 - Certain Consumer Electronics and Display Devices and Products Containing Same Determination Not...

    2012-05-30

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-836] Certain Consumer Electronics and Display Devices and Products Containing Same Determination Not To Review Initial Determination To Amend... electronics and display devices and products containing the same by reason of infringement of U.S. Patent Nos...

  1. 77 FR 49458 - Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of...

    2012-08-16

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices.... 1337 in the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics, by reason of the infringement of claims of six...

  2. 78 FR 23593 - Certain Mobile Electronic Devices Incorporating Haptics; Termination of Investigation

    2013-04-19

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices... the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics that infringe certain claims of six Immersion patents. 77...

  3. Electronic device, system on chip ad method of monitoring data traffic

    2011-01-01

    Therefore, an electronic device is provided which comprises a plurality of processing units (IP1-IP6), and a network-based interconnect (N) coupling the processing units (IP1-IP6) for enabling at least one first communication path (C) between the processing units (IP1-IP6). The electronic device

  4. Hardening device, by inserts, of electronic component against radiation

    Val, C.

    1987-01-01

    The hardening device includes at least two materials, one with high atomic number with respect to the other. One of these materials is set as inserts in a layer of the other material. The hardening device is then made by stacking of such layers, the insert density varying from one layer to the other, making thus vary the atomic number resulting from the hardening device along its thickness, following a predefined law [fr

  5. Ionic current devices-Recent progress in the merging of electronic, microfluidic, and biomimetic structures.

    Koo, Hyung-Jun; Velev, Orlin D

    2013-05-09

    We review the recent progress in the emerging area of devices and circuits operating on the basis of ionic currents. These devices operate at the intersection of electrochemistry, electronics, and microfluidics, and their potential applications are inspired by essential biological processes such as neural transmission. Ionic current rectification has been demonstrated in diode-like devices containing electrolyte solutions, hydrogel, or hydrated nanofilms. More complex functions have been realized in ionic current based transistors, solar cells, and switching memory devices. Microfluidic channels and networks-an intrinsic component of the ionic devices-could play the role of wires and circuits in conventional electronics.

  6. Device intended for measurement of induced trapped charge in insulating materials under electron irradiation in a scanning electron microscope

    Belkorissat, R; Benramdane, N; Jbara, O; Rondot, S; Hadjadj, A; Belhaj, M

    2013-01-01

    A device for simultaneously measuring two currents (i.e. leakage and displacement currents) induced in insulating materials under electron irradiation has been built. The device, suitably mounted on the sample holder of a scanning electron microscope (SEM), allows a wider investigation of charging and discharging phenomena that take place in any type of insulator during its electron irradiation and to determine accurately the corresponding time constants. The measurement of displacement current is based on the principle of the image charge due to the electrostatic influence phenomena. We are reporting the basic concept and test results of the device that we have built using, among others, the finite element method for its calibration. This last method takes into account the specimen chamber geometry, the geometry of the device and the physical properties of the sample. In order to show the possibilities of the designed device, various applications under different experimental conditions are explored. (paper)

  7. Modeling Temperature Dependent Singlet Exciton Dynamics in Multilayered Organic Nanofibers

    de Sousa, Leonardo Evaristo; de Oliveira Neto, Pedro Henrique; Kjelstrup-Hansen, Jakob

    2018-01-01

    Organic nanofibers have shown potential for application in optoelectronic devices because of the tunability of their optical properties. These properties are influenced by the electronic structure of the molecules that compose the nanofibers, but also by the behavior of the excitons generated...... dynamics in multilayered organic nanofibers. By simulating absorption and emission spectra, the possible Förster transitions are identified. Then, a Kinetic Monte Carlo (KMC) model is employed in combination with a genetic algorithm to theoretically reproduce time resolved photoluminescence measurements...

  8. iPosture: The Size of Electronic Consumer Devices Affects our Behavior

    Bos, Maarten W.; Cuddy, Amy J. C.

    2013-01-01

    We examined whether incidental body posture, prompted by working on electronic devices of different sizes, affects power-related behaviors. Grounded in research showing that adopting expansive body postures increases psychological power, we hypothesized that working on larger devices, which forces people to physically expand, causes users to behave more assertively. Participants were randomly assigned to interact with one of four electronic devices that varied in size: an iPod Touch, an iPad,...

  9. Nitridation and contrast of B4C/La interfaces and X-ray multilayer optics

    Tsarfati, T.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Bijkerk, Frederik

    2010-01-01

    Chemical diffusion and interlayer formation in thin layers and at interfaces is of increasing influence in nanoscopic devices such as nano-electronics, magneto-optical storage and multilayer X-ray optics. We show that with the nitridation of reactive B4C/La interfaces, both the chemical and optical

  10. Recent progress on thin-film encapsulation technologies for organic electronic devices

    Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

    2016-03-01

    Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

  11. Trend of Energy Saving in Electronic Devices for Research and Development

    Rahmayanti R.

    2016-01-01

    Full Text Available In electronic industry, energy saving is one of the performance indicators of competitiveness beside price, speed, bandwidth and reliability. This affects research and development (R&D activity in mechatronic systems which uses electronic components and electronic systems. A review of trend of electronic devices technology development has been conducted with focus on energy saving. This review includes electronic devices, semiconductor, and nanotechnology. It can be concluded that the trend in electronic devices is mainly dictated by semiconductor technology development. The trend can be concluded as smaller size, lower voltage leading to energy saving, less heat, higher speed, more reliable, and cheaper. In accordance to such technology development, R&D activities in mechatronics especially in Indonesia is being pushed to make proper alignment.Some of such alignment actions are surface mount technology (SMT for installing surface mount devices components (SMD, design layout and SMD troubleshooting tools as well as human resources training and development.

  12. Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

    Henderson, Gregory Newell

    Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

  13. Functional nanomaterials and devices for electronics, sensors and energy harvesting

    Balestra, Francis; Kilchytska, Valeriya; Flandre, Denis

    2014-01-01

    This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

  14. Opto-electronic devices from block copolymers and their oligomers.

    Hadziioannou, G

    1997-01-01

    This paper presents research activities towards the development of polymer materials and devices for optoelectronics, An approach to controlling the conjugation length and transferring the luminescence properties of organic molecules to polymers through black copolymers containing well-defined

  15. "Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

    Irimia-Vladu, Mihai

    2014-01-21

    "Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

  16. Printed Organic and Inorganic Electronics: Devices To Systems

    Sevilla, Galo T.

    2016-11-11

    Affordable and versatile printed electronics can play a critical role for large area applications, such as for displays, sensors, energy harvesting, and storage. Significant advances including commercialization in the general area of printed electronics have been based on organic molecular electronics. Still some fundamental challenges remain: thermal instability, modest charge transport characteristics, and limited lithographic resolution. In the last decade, one-dimensional nanotubes and nanowires, like carbon nanotubes and silicon nanowires, followed by two-dimensional materials, like graphene and transitional dichalcogenide materials, have shown interesting promise as next-generation printed electronic materials. Challenges, such as non-uniformity in growth, limited scalability, and integration issues, need to be resolved for the viable application of these materials to technology. Recently, the concept of printed high-performance complementary metal\\\\text-oxide semiconductor electronics has also emerged and been proven successful for application to electronics. Here, we review progress in CMOS technology and applications, including challenges faced and opportunities revealed.

  17. 77 FR 68829 - Certain Electronic Digital Media Devices and Components Thereof; Notice of Request for Statements...

    2012-11-16

    ... electronic digital media devices and components thereof imported by respondents Samsung Electronics Co, Ltd. of Korea; Samsung Electronics America, Inc. of Ridgefield Park, New Jersey; and Samsung Telecommunications America, LLC of Richardson, Texas (collectively ``Samsung''), and cease and desist orders against...

  18. 77 FR 21584 - Certain Consumer Electronics and Display Devices and Products Containing Same; Institution of...

    2012-04-10

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-836] Certain Consumer Electronics and Display... electronics and display devices and products containing same by reason of infringement of certain claims of U... importation, or the sale within the United States after importation of certain consumer electronics and...

  19. A simple and cost-effective method for fabrication of integrated electronic-microfluidic devices using a laser-patterned PDMS layer

    Li, Ming

    2011-12-03

    We report a simple and cost-effective method for fabricating integrated electronic-microfluidic devices with multilayer configurations. A CO 2 laser plotter was employed to directly write patterns on a transferred polydimethylsiloxane (PDMS) layer, which served as both a bonding and a working layer. The integration of electronics in microfluidic devices was achieved by an alignment bonding of top and bottom electrode-patterned substrates fabricated with conventional lithography, sputtering and lift-off techniques. Processes of the developed fabrication method were illustrated. Major issues associated with this method as PDMS surface treatment and characterization, thickness-control of the transferred PDMS layer, and laser parameters optimization were discussed, along with the examination and testing of bonding with two representative materials (glass and silicon). The capability of this method was further demonstrated by fabricating a microfluidic chip with sputter-coated electrodes on the top and bottom substrates. The device functioning as a microparticle focusing and trapping chip was experimentally verified. It is confirmed that the proposed method has many advantages, including simple and fast fabrication process, low cost, easy integration of electronics, strong bonding strength, chemical and biological compatibility, etc. © Springer-Verlag 2011.

  20. Smart home design for electronic devices monitoring based wireless gateway network using cisco packet tracer

    Sihombing, Oloan; Zendrato, Niskarto; Laia, Yonata; Nababan, Marlince; Sitanggang, Delima; Purba, Windania; Batubara, Diarmansyah; Aisyah, Siti; Indra, Evta; Siregar, Saut

    2018-04-01

    In the era of technological development today, the technology has become the need for the life of today's society. One is needed to create a smart home in turning on and off electronic devices via smartphone. So far in turning off and turning the home electronic device is done by pressing the switch or remote button, so in control of electronic device control less effective. The home smart design is done by simulation concept by testing system, network configuration, and wireless home gateway computer network equipment required by a smart home network on cisco packet tracer using Internet Thing (IoT) control. In testing the IoT home network wireless network gateway system, multiple electronic devices can be controlled and monitored via smartphone based on predefined configuration conditions. With the Smart Ho me can potentially increase energy efficiency, decrease energy usage costs, control electronics and change the role of residents.

  1. Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

    Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

    2018-05-01

    It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

  2. Current voltage perspective of an organic electronic device

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  3. Modern Electronic Devices: An Increasingly Common Cause of Skin Disorders in Consumers.

    Corazza, Monica; Minghetti, Sara; Bertoldi, Alberto Maria; Martina, Emanuela; Virgili, Annarosa; Borghi, Alessandro

    2016-01-01

    : The modern conveniences and enjoyment brought about by electronic devices bring with them some health concerns. In particular, personal electronic devices are responsible for rising cases of several skin disorders, including pressure, friction, contact dermatitis, and other physical dermatitis. The universal use of such devices, either for work or recreational purposes, will probably increase the occurrence of polymorphous skin manifestations over time. It is important for clinicians to consider electronics as potential sources of dermatological ailments, for proper patient management. We performed a literature review on skin disorders associated with the personal use of modern technology, including personal computers and laptops, personal computer accessories, mobile phones, tablets, video games, and consoles.

  4. An electron cooling device in the one MeV energy region

    Busso, L.; Tecchio, L.; Tosello, F.

    1987-01-01

    The project of an electron cooling device at 700 KeV electron energy is reported. The single parts of the device is described in detail. Electron beam diagnostics and technical problems is discussed. The electron gun, the accelerating/decelerating column and the collector have been studied by menas of the Herrmannsfeldt's program and at present are under construction. The high voltage system and the electron cooling magnet are also under construction. Vacuum tests with both hot and cold cathodes have demonstrated that the vacuum requirements can be attained by the use of non-evaporable getter (NEG) pumps between gun, collector and the cooling region. Both kinds of diagnostic for longitudinal and transversal electron temperature measurements are in progress. A first prototype of the synchronous picj-up was successfully tested at CERN SPS. At present the diagnostic with laser beam is in preparation. During the next year the device will be assembled and the laboratory test will be started

  5. Aloe vera in active and passive regions of electronic devices towards a sustainable development

    Lim, Zhe Xi; Sreenivasan, Sasidharan; Wong, Yew Hoong; Cheong, Kuan Yew

    2017-07-01

    The increasing awareness towards sustainable development of electronics has driven the search for natural bio-organic materials in place of conventional electronic materials. The concept of using natural bio-organic materials in electronics provides not only an effective solution to address global electronic waste crisis, but also a compelling template for sustainable electronics manufacturing. This paper attempts to provide an overview of using Aloe vera gel as a natural bio-organic material for various electronic applications. Important concepts such as responses of living Aloe vera plant towards electrical stimuli and demonstrations of Aloe vera films as passive and active regions of electronic devices are highlighted in chronological order. The biodegradability and biocompatibility of Aloe vera can bring the world a step closer towards the ultimate goal of sustainable development of electronic devices from "all-natural" materials.

  6. Electronic properties of organic monolayers and molecular devices

    These devices exhibit a marked current–voltage rectification behavior due to resonant transport between the Si conduction band and the molecule highest occupied molecular orbital of the molecule. We discuss the role of metal Fermi level pinning in the current–voltage behavior of these molecular junctions. We also ...

  7. Authentication of Radio Frequency Identification Devices Using Electronic Characteristics

    Chinnappa Gounder Periaswamy, Senthilkumar

    2010-01-01

    Radio frequency identification (RFID) tags are low-cost devices that are used to uniquely identify the objects to which they are attached. Due to the low cost and size that is driving the technology, a tag has limited computational capabilities and resources. This limitation makes the implementation of conventional security protocols to prevent…

  8. Electron transport in nano-scaled piezoelectronic devices

    Jiang, Zhengping; Kuroda, Marcelo A.; Tan, Yaohua; Newns, Dennis M.; Povolotskyi, Michael; Boykin, Timothy B.; Kubis, Tillmann; Klimeck, Gerhard; Martyna, Glenn J.

    2013-05-01

    The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power switching. In this device, the piezoresistive channel is metalized via the expansion of a relaxor piezoelectric element to turn the device on. The mixed-valence compound SmSe is a good choice of PET channel material because of its isostructural pressure-induced continuous metal insulator transition, which is well characterized in bulk single crystals. Prediction and optimization of the performance of a realistic, nano-scaled PET based on SmSe requires the understanding of quantum confinement, tunneling, and the effect of metal interface. In this work, a computationally efficient empirical tight binding (ETB) model is developed for SmSe to study quantum transport in these systems and the scaling limit of PET channel lengths. Modulation of the SmSe band gap under pressure is successfully captured by ETB, and ballistic conductance shows orders of magnitude change under hydrostatic strain, supporting operability of the PET device at nanoscale.

  9. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  10. Thermal analysis of continuous and patterned multilayer films in the presence of a nanoscale hot spot

    Juang, Jia-Yang; Zheng, Jinglin

    2016-10-01

    Thermal responses of multilayer films play essential roles in state-of-the-art electronic systems, such as photo/micro-electronic devices, data storage systems, and silicon-on-insulator transistors. In this paper, we focus on the thermal aspects of multilayer films in the presence of a nanoscale hot spot induced by near field laser heating. The problem is set up in the scenario of heat assisted magnetic recording (HAMR), the next-generation technology to overcome the data storage density limit imposed by superparamagnetism. We characterized thermal responses of both continuous and patterned multilayer media films using transient thermal modeling. We observed that material configurations, in particular, the thermal barriers at the material layer interfaces crucially impact the temperature field hence play a key role in determining the hot spot geometry, transient response and power consumption. With a representative generic media model, we further explored the possibility of optimizing thermal performances by designing layers of heat sink and thermal barrier. The modeling approach demonstrates an effective way to characterize thermal behaviors of micro and nano-scale electronic devices with multilayer thin film structures. The insights into the thermal transport scheme will be critical for design and operations of such electronic devices.

  11. Printed Organic and Inorganic Electronics: Devices To Systems

    Sevilla, Galo T.; Hussain, Muhammad Mustafa

    2016-01-01

    Affordable and versatile printed electronics can play a critical role for large area applications, such as for displays, sensors, energy harvesting, and storage. Significant advances including commercialization in the general area of printed

  12. Humidity effects on the electronic transport properties in carbon based nanoscale device

    He, Jun; Chen, Ke-Qiu

    2012-01-01

    By applying nonequilibrium Green's functions in combination with the density functional theory, we investigate the effect of humidity on the electronic transport properties in carbon based nanoscale device. The results show that different humidity may form varied localized potential barrier, which is a very important factor to affect the stability of electronic transport in the nanoscale system. A mechanism for the humidity effect is suggested. -- Highlights: ► Electronic transport in carbon based nanoscale device. ► Humidity affects the stability of electronic transport. ► Different humidity may form varied localized potential barrier.

  13. Associating biosensing properties with the morphological structure of multilayers containing carbon nanotubes on field-effect devices

    Siqueira, Jose R. Jr. [Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, Sao Carlos (Brazil); Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich (Germany); Baecker, Matthias; Poghossian, Arshak; Schoening, Michael J. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich (Germany); Zucolotto, Valtencir; Oliveira, Osvaldo N. Jr. [Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, Sao Carlos (Brazil)

    2010-04-15

    The control of molecular architecture provided by the layer-by-layer (LbL) technique has led to enhanced biosensors, in which advantageous features of distinct materials can be combined. Full optimization of biosensing performance, however, is only reached if the film morphology is suitable for the principle of detection of a specific biosensor. In this paper, we report a detailed morphology analysis of LbL films made with alternating layers of single-walled carbon nanotubes (SWNTs) and polyamidoamine (PAMAM) dendrimers, which were then covered with a layer of penicillinase (PEN). An optimized performance to detect penicillin G was obtained with 6-bilayer SWNT/PAMAM LbL films deposited on p-Si-SiO{sub 2}-Ta{sub 2}O{sub 5} chips, used in biosensors based on a capacitive electrolyte-insulator-semiconductor (EIS) and a light-addressable potentiometric sensor (LAPS) structure, respectively. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) images indicated that the LbL films were porous, with a large surface area due to interconnection of SWNT into PAMAM layers. This morphology was instrumental for the adsorption of a larger quantity of PEN, with the resulting LbL film being highly stable. The experiments to detect penicillin were performed with constant-capacitance (ConCap) and constant-current (CC) measurements for EIS and LAPS sensors, respectively, which revealed an enhanced detection signal and sensitivity of ca. 100 mV/decade for the field-effect sensors modified with the PAMAM/SWNT LbL film. It is concluded that controlling film morphology is essential for an enhanced performance of biosensors, not only in terms of sensitivity but also stability and response time. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. GaN nano-membrane for optoelectronic and electronic device applications

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  15. Recent progress in organic electronics and photonics: A perspective on the future of organic devices

    Bredas, Jean-Luc

    2016-01-01

    The fields of organic electronics and photonics have witnessed remarkable advances over the past few years. This progress bodes well for the increased utilization of organic materials as the active layers in devices for applications as diverse

  16. Effect of electronic device use on pedestrian safety : a literature review.

    2016-04-01

    This literature review on the effect of electronic device use on pedestrian safety is part of a research project sponsored by the Office of Behavioral Safety Research in the National Highway Traffic Safety Administration (NHTSA). An extensive literat...

  17. Infective endocarditis and risk of death after cardiac implantable electronic device implantation

    Özcan, Cengiz; Raunsø, Jakob; Lamberts, Morten

    2017-01-01

    AIMS: To determine the incidence, risk factors, and mortality of infective endocarditis (IE) following implantation of a first-time, permanent, cardiac implantable electronic device (CIED). METHODS AND RESULTS: From Danish nationwide administrative registers (beginning in 1996), we identified all...

  18. System Testability Analysis for Complex Electronic Devices Based on Multisignal Model

    Long, B; Tian, S L; Huang, J G

    2006-01-01

    It is necessary to consider the system testability problems for electronic devices during their early design phase because modern electronic devices become smaller and more compositive while their function and structure are more complex. Multisignal model, combining advantage of structure model and dependency model, is used to describe the fault dependency relationship for the complex electronic devices, and the main testability indexes (including optimal test program, fault detection rate, fault isolation rate, etc.) to evaluate testability and corresponding algorithms are given. The system testability analysis process is illustrated for USB-GPIB interface circuit with TEAMS toolbox. The experiment results show that the modelling method is simple, the computation speed is rapid and this method has important significance to improve diagnostic capability for complex electronic devices

  19. Automatic cross-sectioning and monitoring system locates defects in electronic devices

    Jacobs, G.; Slaughter, B.

    1971-01-01

    System consists of motorized grinding and lapping apparatus, sample holder, and electronic control circuit. Low power microscope examines device to pinpoint location of circuit defect, and monitor displays output signal when defect is located exactly.

  20. Electronic health records and cardiac implantable electronic devices: new paradigms and efficiencies.

    Slotwiner, David J

    2016-10-01

    The anticipated advantages of electronic health records (EHRs)-improved efficiency and the ability to share information across the healthcare enterprise-have so far failed to materialize. There is growing recognition that interoperability holds the key to unlocking the greatest value of EHRs. Health information technology (HIT) systems including EHRs must be able to share data and be able to interpret the shared data. This requires a controlled vocabulary with explicit definitions (data elements) as well as protocols to communicate the context in which each data element is being used (syntactic structure). Cardiac implantable electronic devices (CIEDs) provide a clear example of the challenges faced by clinicians when data is not interoperable. The proprietary data formats created by each CIED manufacturer, as well as the multiple sources of data generated by CIEDs (hospital, office, remote monitoring, acute care setting), make it challenging to aggregate even a single patient's data into an EHR. The Heart Rhythm Society and CIED manufacturers have collaborated to develop and implement international standard-based specifications for interoperability that provide an end-to-end solution, enabling structured data to be communicated from CIED to a report generation system, EHR, research database, referring physician, registry, patient portal, and beyond. EHR and other health information technology vendors have been slow to implement these tools, in large part, because there have been no financial incentives for them to do so. It is incumbent upon us, as clinicians, to insist that the tools of interoperability be a prerequisite for the purchase of any and all health information technology systems.

  1. Use of portable electronic devices in a hospital setting and their potential for bacterial colonization.

    Khan, Amber; Rao, Amitha; Reyes-Sacin, Carlos; Hayakawa, Kayoko; Szpunar, Susan; Riederer, Kathleen; Kaye, Keith; Fishbain, Joel T; Levine, Diane

    2015-03-01

    Portable electronic devices are increasingly being used in the hospital setting. As with other fomites, these devices represent a potential reservoir for the transmission of pathogens. We conducted a convenience sampling of devices in 2 large medical centers to identify bacterial colonization rates and potential risk factors. Copyright © 2015 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

  2. Human Powered PiezoelectricBatteries to Supply Power to Wearable Electronic Devices.

    Gonzalez, Jose' Luis; Rubio, Antonio; Moll, Francesc

    2002-01-01

    Consumer electronic equipments are becoming small, portable devices that provide users with a wide range of functionality, from communication to music playing. The battery technology and the power consumption of the device limit the size, weight and autonomous lifetime. One promising alternative to batteries (and fuel cells, that must be refueled as well) is to use the parasitic energy dissipated in the movement of the wearer of the device to power it. We analyze in this work the current stat...

  3. A device for determination of the electrical potential of a rocket carrying an electron gun

    Gringauz, K.I.; Musatov, L.S.; Shutte, N.M.; Beliashin, A.P.; Denstchikova, L.I.; Kopilov, V.F.

    1978-01-01

    Data on the principle of operation, sensors and electronics of a device for determination of the electrical potential relative to the surrounding medium of a rocket carrying an electric gun are presented. The device operated successfully on board an Eridan rocket during the ARAKS experiment. (Auth.)

  4. A surface diffuse scattering model for the mobility of electrons in surface charge coupled devices

    Ionescu, M.

    1977-01-01

    An analytical model for the mobility of electrons in surface charge coupled devices is studied on the basis of the results previously obtained, considering a surface diffuse scattering; the importance of the results obtained for a better understanding of the influence of the fringing field in surface charge coupled devices is discussed. (author)

  5. Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers

    Strobel, S.; Albert, E.; Csaba, G.

    2009-01-01

    We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI s...

  6. 76 FR 79708 - Certain Portable Electronic Devices And Related Software; Submission for OMB Review; Comment...

    2011-12-22

    ... present in the pdQ device. 6. Do the Accused iPhones meet the ``switching the mobile phone system from... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-721] Certain Portable Electronic Devices... into the United States, the sale for importation, and sale within the United States after importation...

  7. Simultaneous specimen and stage cleaning device for analytical electron microscope

    Zaluzec, Nestor J.

    1996-01-01

    An improved method and apparatus are provided for cleaning both a specimen stage, a specimen and an interior of an analytical electron microscope (AEM). The apparatus for cleaning a specimen stage and specimen comprising a plasma chamber for containing a gas plasma and an air lock coupled to the plasma chamber for permitting passage of the specimen stage and specimen into the plasma chamber and maintaining an airtight chamber. The specimen stage and specimen are subjected to a reactive plasma gas that is either DC or RF excited. The apparatus can be mounted on the analytical electron microscope (AEM) for cleaning the interior of the microscope.

  8. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  9. Electronic transport in disordered graphene antidot lattice devices

    Power, Stephen; Jauho, Antti-Pekka

    2014-01-01

    Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application...

  10. Reactor oscillator - I - III, Part III - Electronic device

    Lolic, B.; Jovanovic, S.

    1961-12-01

    This report describes functioning of the reactor oscillator electronic system. Two methods of oscillator operation were discussed. The first method is so called method of amplitude modulation of the reactor power, and the second newer method is phase method. Both methods are planned for the present reactor oscillator

  11. Inkjet Printing With In Situ Fast Annealing For Patterned Multilayer Deposition

    Boulfrad, Samir; Alarousu, Erkki; Da'as, Eman Husni; Jabbour, Ghassan

    2013-01-01

    Patterned multilayer films, such as those used in electronic devices, solar cells, solid oxide fuel cells (SOFCs), and solid oxide electrolysis cells (SOECs) may be deposited and annealed in a single tool. The tool includes an inkjet printer head, a heater, and a laser. The inkjet printer head deposits on a substrate either suspended particles of a functional material or solvated precursors of a functional material. The head is mounted on a support that allows the head to scan the substrate by moving along the support in a first direction and moving the support along a second direction. After the head deposits the material the heater evaporates solvent from substrate, and the depositing and heating may be repeated one or more times to form a patterned multilayer material. Then, a laser, microwave, and/or Joule effect heating device may be used to anneal the multilayer material to a desired pattern and crystalline state.

  12. Inkjet Printing With In Situ Fast Annealing For Patterned Multilayer Deposition

    Boulfrad, Samir

    2013-12-05

    Patterned multilayer films, such as those used in electronic devices, solar cells, solid oxide fuel cells (SOFCs), and solid oxide electrolysis cells (SOECs) may be deposited and annealed in a single tool. The tool includes an inkjet printer head, a heater, and a laser. The inkjet printer head deposits on a substrate either suspended particles of a functional material or solvated precursors of a functional material. The head is mounted on a support that allows the head to scan the substrate by moving along the support in a first direction and moving the support along a second direction. After the head deposits the material the heater evaporates solvent from substrate, and the depositing and heating may be repeated one or more times to form a patterned multilayer material. Then, a laser, microwave, and/or Joule effect heating device may be used to anneal the multilayer material to a desired pattern and crystalline state.

  13. Characterization of a direct detection device imaging camera for transmission electron microscopy

    Milazzo, Anna-Clare, E-mail: amilazzo@ncmir.ucsd.edu [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States); Moldovan, Grigore [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Lanman, Jason [Department of Molecular Biology, The Scripps Research Institute, La Jolla, CA 92037 (United States); Jin, Liang; Bouwer, James C. [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States); Klienfelder, Stuart [University of California at Irvine, Irvine, CA 92697 (United States); Peltier, Steven T.; Ellisman, Mark H. [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States); Kirkland, Angus I. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Xuong, Nguyen-Huu [University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093 (United States)

    2010-06-15

    The complete characterization of a novel direct detection device (DDD) camera for transmission electron microscopy is reported, for the first time at primary electron energies of 120 and 200 keV. Unlike a standard charge coupled device (CCD) camera, this device does not require a scintillator. The DDD transfers signal up to 65 lines/mm providing the basis for a high-performance platform for a new generation of wide field-of-view high-resolution cameras. An image of a thin section of virus particles is presented to illustrate the substantially improved performance of this sensor over current indirectly coupled CCD cameras.

  14. Characterization of a direct detection device imaging camera for transmission electron microscopy

    Milazzo, Anna-Clare; Moldovan, Grigore; Lanman, Jason; Jin, Liang; Bouwer, James C.; Klienfelder, Stuart; Peltier, Steven T.; Ellisman, Mark H.; Kirkland, Angus I.; Xuong, Nguyen-Huu

    2010-01-01

    The complete characterization of a novel direct detection device (DDD) camera for transmission electron microscopy is reported, for the first time at primary electron energies of 120 and 200 keV. Unlike a standard charge coupled device (CCD) camera, this device does not require a scintillator. The DDD transfers signal up to 65 lines/mm providing the basis for a high-performance platform for a new generation of wide field-of-view high-resolution cameras. An image of a thin section of virus particles is presented to illustrate the substantially improved performance of this sensor over current indirectly coupled CCD cameras.

  15. Electronic device for automatic control of exposure in radiography

    Pendharkar, A.S.; Jayakumar, T.K.

    1977-01-01

    An electronic instrument for calculating and controlling exposure in radiography practice using radioisotopes is described. When using this equipment, only factor to be known is the dose required by the film for a given density and the thickness of material inspected. It eliminates all the problems arising out of various parameters such as source decay etc in the conventional procedure for calculating exposure time. Principle of operation, the electronic circuitry adopted and the functional aspects of the system are described in detail. Exposure doses for different industrial films have been related to the instrumental readouts. The system reproducibility and reliability have been evaluated. The advantages and limitations of the present system and the future development to overcome the problems are indicated. (author)

  16. Activating students' interest in lectures and practical courses using their electronic devices

    Wijtmans, M.; van Rens, L.; van Muijlwijk- Koezen, J.E.

    2014-01-01

    Interactive teaching with larger groups of students can be a challenge, but the use of mobile electronic devices by students (smartphones, tablets, laptops) can be used to improve classroom interaction. We have examined several types of tasks that can be electronically enacted in classes and

  17. 78 FR 16707 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    2013-03-18

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2943] Certain Electronic Devices Having Placeshifting... International Trade Commission (USITC): http://edis.usitc.gov . \\3\\ Electronic Document Information System (EDIS...; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION...

  18. 78 FR 2437 - Corrected: Certain Cases For Portable Electronic Devices; Notice of Receipt of Complaint...

    2013-01-11

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2927] Corrected: Certain Cases For Portable Electronic...: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Cases For Portable Electronic Devices...

  19. 77 FR 4059 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof; Receipt...

    2012-01-26

    ... INTERNATIONAL TRADE COMMISSION [DN 2869] Certain Electronic Devices for Capturing and Transmitting... Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled In Re Certain Electronic...

  20. Thermal protection of electronic devices with the Nylon6/66-PEG nanofiber membranes

    Li Ya; Li Xue-Weis; He Ji-Huan; Wang Ping

    2014-01-01

    Phase change materials for thermal energy storage have been widely applied to clothing insulation, electronic products of heat energy storage. The thermal storage potential of the nanofiber membranes was analyzed using the differential scanning calorimetry. Effect of microstructure of the membrane on energy storage was analyzed, and its applications to electronic devices were elucidated.

  1. 78 FR 56737 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    2013-09-13

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons are...

  2. 78 FR 49764 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    2013-08-15

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review n... for this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc...

  3. 78 FR 72712 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    2013-12-03

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov...

  4. Exploring coherent transport through π-stacked systems for molecular electronic devices

    Li, Qian; Solomon, Gemma

    2014-01-01

    Understanding electron transport across π-stacked systems can help to elucidate the role of intermolecular tunneling in molecular junctions and potentially with the design of high-efficiency molecular devices. Here we show how conjugation length and substituent groups influence the electron trans...

  5. Double deflection system for an electron beam device

    Parker, N.W.; Crewe, A.V.

    1978-01-01

    A double deflection scanning system for electron beam instruments is provided embodying a means of correcting isotropic coma, and anisotropic coma aberrations induced by the magnetic lens of such an instrument. The scanning system deflects the beam prior to entry into the magnetic lens from the normal on-axis intersection of the beam with the lens according to predetermined formulas and thereby reduces the aberrations

  6. Electronics: Mott Transistor: Fundamental Studies and Device Operation Mechanisms

    2016-03-21

    display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. Harvard University Office for Sponsored Programs...including journal references , in the following categories: (b) Papers published in non-peer-reviewed journals (N/A for none) 03/21/2016 03/21/2016 03...limited kinetics of electron doping in correlated oxides, Applied Physics Letters (07 2015) TOTAL: 1 Books Number of Manuscripts: Patents Submitted

  7. Latest progress in gallium-oxide electronic devices

    Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao

    2018-02-01

    Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

  8. An analysis of radiation effects on electronics and soi-mos devices as an alternative

    Ikraiam, F. A.

    2013-01-01

    The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

  9. Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices

    Beljonne, David

    2011-02-08

    We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

  10. Plasma electron density measurement with multichannel microwave interferometer on the HL-1 tokamak device

    Xu Deming; Zhang Hongyin; Liu Zetian; Ding Xuantong; Li Qirui; Wen Yangxi

    1989-11-01

    A multichannel microwave interferometer which is composed of different microwave interferometers (one 2 mm band, one 4 mm band and two 8 mm band) has been used to measure the plasma electron density on HL-1 tokamak device. The electron density approaching to 5 x 10 13 cm -3 is measured by a 2 mm band microwave interferometer. In the determinable range, the electron density profile in the cross-section on HL-1 device has been measured by this interferometer. A microcomputer data processing system is also developed

  11. Electronic spectrum of a deterministic single-donor device in silicon

    Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

    2013-01-01

    We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants

  12. The use of electronic devices for communication with colleagues and other healthcare professionals - nursing professionals' perspectives.

    Koivunen, Marita; Niemi, Anne; Hupli, Maija

    2015-03-01

    The aim of the study is to describe nursing professionals' experiences of the use of electronic devices for communication with colleagues and other healthcare professionals. Information and communication technology applications in health care are rapidly expanding, thanks to the fast-growing penetration of the Internet and mobile technology. Communication between professionals in health care is essential for patient safety and quality of care. Implementing new methods for communication among healthcare professionals is important. A cross-sectional survey was used in the study. The data were collected in spring 2012 using an electronic questionnaire with structured and open-ended questions. The target group comprised the nursing professionals (N = 567, n = 123) in one healthcare district who worked in outpatient clinics in publically funded health care in Finland. Nursing professionals use different electronic devices for communication with each other. The most often used method was email, while the least used methods were question-answer programmes and synchronous communication channels on the Internet. Communication using electronic devices was used for practical nursing, improving personnel competences, organizing daily operations and administrative tasks. Electronic devices may speed up the management of patient data, improve staff cooperation and competence and make more effective use of working time. The obstacles were concern about information security, lack of technical skills, unworkable technology and decreasing social interaction. According to our findings, despite the obstacles related to use of information technology, the use of electronic devices to support communication among healthcare professionals appears to be useful. © 2014 John Wiley & Sons Ltd.

  13. Modification of doping front migration in electrochemical devices and application to organic electronics

    Nolte, Marius; Wan Xianglong; Kopp, Olga; Hermes, Ina; Panz, Jan; Rahmanian, Afsaneh; Knoll, Meinhard

    2011-01-01

    Research highlights: → In this paper we demonstrate several ways of tuning the doping front migration process in polymer electronic multilayer structures for the first time. By altering the migration layer thickness the migration velocity may be controlled and it is possible to switch between migration mechanisms. The mechanism of delamination produces rapid jumps in migration velocity, while the addition of 2-hydroxyethylcellulose (HEC) can inhibit this effect. In case of vapor activation the migration velocity may be influenced by the relative humidity or by varying the concentration of hygroscopic salts added to the migration layer. The migration mechanisms can be explained in terms of diffusion, capillary transport, and delamination. Tuning the migration process may be used to construct polymer electronic structures such as enhancement and depletion type pseudo transistors and electrical switches (ON-OFF and OFF-ON) with an improved switching time of several minutes. The doping front width is determined by microscopic optical absorption spectroscopy and can be controlled by the concentration of the doping solution. In case of low concentrations the electrochromic effect of the double front is observed. - Abstract: We demonstrate several methods of modifying the doping front migration process in multilayer structures, enabling control of migration velocity and switching between different migration mechanisms. Sharp jumps in migration velocity may be induced using a delamination effect. The influence of migration layer thickness and composition is examined. Migration velocity may also be influenced by exposing the system to a defined relative humidity or by varying the concentration of a hygroscopic salt in the migration layer. The migration mechanisms can be explained in terms of diffusion, capillary transport, and delamination. By tailoring the migration process a variety of polymer electronic structures such as pseudo transistors (enhancement and depletion

  14. Design and Testing of Electronic Devices for Harsh Environments

    Nico, Costantino

    This thesis reports an overview and the main results of the research activity carried out within the PhD programme in Information Engineering of the University of Pisa (2010-2012). The research activity has been focused on different fields, including Automotive and High Energy Physics experiments, according to a common denominator: the development of electroni c devices and systems operating in harsh environments. There are many applications that forc e the adoption of design methodologies and strategies focused on this type of envir onments: military, biom edical, automotive, industrial and space. The development of solutions fulfilling specific operational requirements, therefore represents an interesting field of research. The first research activity has been framed within the ATHENIS project, funded by the CORDIS Commission of the European Community, and aiming at the development of a System-on-Chip, a r egulator for alternators employed on vehicles, presenting both configurability an d t...

  15. Nanoporous metal film: An energy-dependent transmission device for electron waves

    Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

    2011-01-01

    We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

  16. Symmetric low-voltage powering system for relativistic electronic devices

    Agafonov, A.V.; Lebedev, A.N.; Krastelev, E.G.

    2005-01-01

    A special driver for double-sided powering of relativistic magnetrons and several methods of localized electron flow forming in the interaction region of relativistic magnetrons are proposed and discussed. Two experimental installations are presented and discussed. One of them is designed for laboratory research and demonstration experiments at a rather low voltage. The other one is a prototype of a full-scale installation for an experimental research at relativistic levels of voltages on the microwave generation in the new integrated system consisting of a relativistic magnetron and symmetrical induction driver

  17. Integrated electronic device for processing impulses from neutron detectors

    Stoica, Mihai; Pirvu, Ion

    2009-01-01

    The developing of nuclear power is a key factor in decreasing energy Romania's dependence on imports of fossil fuels (oil, natural gas). An important point in achieving this goal is to use the experience acquired in the design and use of the equipment produced with the participation of INR specialists for Cernavoda NPP, Units 1 and 2. The design based on Surface Mount Technology (SMT) and the implementation of electronic interface modules of computer processing and detectors of radiation or nuclear particles contribute both to modernize and increase the performance of equipment. (authors)

  18. Interfacial and Thin Film Chemistry in Electron Device Fabrication

    1992-01-01

    Chemistry During Electronic Processing" by Professor Richard Osgood, Jr.; "In Situ Optical Diagnostics of Semiconductors Prepared by Laser Chemical Processing...N(Igde Area Code) 22c OFF ft SYMBO. Professors Georee Flynn and Richard Os~ood I MSL DD Form 1473, JUN 86 Previous edotions are obsolete SECURITY...and D. L. Smith, Phys.I Rev. Lett. 62, 649 (1989). 19. E. A. Caridi, T. Y. Chang, K. W. Goossen and L. F. Eastman, AOLi Phvs. Tett. 56, 659 (1990). 1

  19. Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

    Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

    2016-01-01

    The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

  20. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Electrohydrodynamic direct—writing of conductor—insulator-conductor multi-layer interconnection

    Zheng Gao-Feng; Pei Yan-Bo; Wang Xiang; Zheng Jian-Yi; Sun Dao-Heng

    2014-01-01

    A multi-layer interconnection structure is a basic component of electronic devices, and printing of the multi-layer interconnection structure is the key process in printed electronics. In this work, electrohydrodynamic direct-writing (EDW) is utilized to print the conductor—insulator—conductor multi-layer interconnection structure. Silver ink is chosen to print the conductor pattern, and a polyvinylpyrrolidone (PVP) solution is utilized to fabricate the insulator layer between the bottom and top conductor patterns. The influences of EDW process parameters on the line width of the printed conductor and insulator patterns are studied systematically. The obtained results show that the line width of the printed structure increases with the increase of the flow rate, but decreases with the increase of applied voltage and PVP content in the solution. The average resistivity values of the bottom and top silver conductor tracks are determined to be 1.34 × 10 −7 Ω·m and 1.39 × 10 −7 Ω·m, respectively. The printed PVP layer between the two conductor tracks is well insulated, which can meet the insulation requirement of the electronic devices. This study offers an alternative, fast, and cost-effective method of fabricating conductor—insulator—conductor multi-layer interconnections in the electronic industry

  2. Ballistic electron emission spectroscopy on Ag/Si devices

    Bannani, A; Bobisch, C A; Matena, M; Moeller, R [Department of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg (Germany)], E-mail: amin.bannani@uni-due.de

    2008-09-17

    In this work we report on ballistic electron emission spectroscopy (BEES) studies on epitaxial layers of silver grown on silicon surfaces, with either a Si(111)-(7 x 7) or Si(100)-(2 x 1) surface reconstruction. The experiments were done at low temperature and in ultra-high vacuum (UHV). In addition, BEES measurements on polycrystalline Ag films grown on hydrogen-terminated H:Si(111)-(1 x 1) and H:Si(100)-(2 x 1) surfaces were performed. The Schottky barrier heights were evaluated by BEES. The results are compared to the values for the barrier height reported for macroscopic Schottky diodes. We show that the barrier heights for the epitaxial films substantially differ from the values measured on polycrystalline Ag films, suggesting a strong effect of the interface on the barrier height.

  3. PROTEOTRONICS: The emerging science of protein-based electronic devices

    Alfinito, Eleonora; Pousset, Jeremy; Reggiani, Lino

    2015-01-01

    Protein-mediated charge transport is of relevant importance in the design of protein based electronics and in attaining an adequate level of understanding of protein functioning. This is particularly true for the case of transmembrane proteins, like those pertaining to the G protein coupled receptors (GPCRs). These proteins are involved in a broad range of biological processes like catalysis, substance transport, etc., thus being the target of a large number of clinically used drugs. This paper briefly reviews a variety of experiments devoted to investigate charge transport in proteins and present a unified theoretical model able to relate macroscopic experimental results with the conformations of the amino acids backbone of the single protein. (paper)

  4. Recent Progress of Textile-Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications.

    Heo, Jae Sang; Eom, Jimi; Kim, Yong-Hoon; Park, Sung Kyu

    2018-01-01

    Wearable electronics are emerging as a platform for next-generation, human-friendly, electronic devices. A new class of devices with various functionality and amenability for the human body is essential. These new conceptual devices are likely to be a set of various functional devices such as displays, sensors, batteries, etc., which have quite different working conditions, on or in the human body. In these aspects, electronic textiles seem to be a highly suitable possibility, due to the unique characteristics of textiles such as being light weight and flexible and their inherent warmth and the property to conform. Therefore, e-textiles have evolved into fiber-based electronic apparel or body attachable types in order to foster significant industrialization of the key components with adaptable formats. Although the advances are noteworthy, their electrical performance and device features are still unsatisfactory for consumer level e-textile systems. To solve these issues, innovative structural and material designs, and novel processing technologies have been introduced into e-textile systems. Recently reported and significantly developed functional materials and devices are summarized, including their enhanced optoelectrical and mechanical properties. Furthermore, the remaining challenges are discussed, and effective strategies to facilitate the full realization of e-textile systems are suggested. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Impact of stand-by energy losses in electronic devices on smart network performance

    Mandić-Lukić Jasmina S.

    2012-01-01

    Full Text Available Limited energy resources and environmental concerns due to ever increasing energy consumption, more and more emphasis is being put on energy savings. Smart networks are promoted worldwide as a powerful tool used to improve the energy efficiency through consumption management, as well as to enable the distributed power generation, primarily based on renewable energy sources, to be optimally explored. To make it possible for the smart networks to function, a large number of electronic devices is needed to operate or to be in their stand-by mode. The consumption of these devices is added to the consumption of many other electronic devices already in use in households and offices, thus giving rise to the overall power consumption and threatening to counteract the primary function of smart networks. This paper addresses the consumption of particular electronic devices, with an emphasis placed on their thermal losses when in stand-by mode and their total share in the overall power consumption in certain countries. The thermal losses of electronic devices in their stand-by mode are usually neglected, but it seems theoretically possible that a massive increase in their number can impact net performance of the future smart networks considerably so that above an optimum level of energy savings achieved by their penetration, total consumption begins to increase. Based on the current stand-by energy losses from the existing electronic devices, we propose that the future penetration of smart networks be optimized taking also into account losses from their own electronic devices, required to operate in stand-by mode.

  6. Rational design of metal-organic electronic devices: A computational perspective

    Chilukuri, Bhaskar

    Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device

  7. Transmission electron microscopy of InP-based compound semiconductor materials and devices

    Chu, S.N.G.

    1990-01-01

    InP/InGaAsP-based heteroepitaxial structures constitute the major optoelectronic devices for state-of-the-art long wavelength optical fiber communication system.s Future advanced device structures will require thin heteroepitaxial quantum wells and superlattices a few tens of angstrom or less in thickness, and lateral dimensions ranging from a few tens angstrom for quantum dots and wires to a few μm in width for buried heterostructure lasers. Due to the increasing complexity of the device structure required by band-gap engineering, the performance of these devices becomes susceptible to any lattice imperfections present in the structure. Transmission electron microscopy (TEM), therefore, becomes the most important technique in characterizing the structural integrity of these materials. Cross-section transmission electron microscopy (XTEM) not only provides the necessary geometric information on the device structure; a careful study of the materials science behind the observed lattice imperfections provides directions for optimization of both the epitaxial growth parameters and device processing conditions. Furthermore, for device reliability studies, TEM is the only technique that unambiguously identifies the cause of device degradation. In this paper, the authors discuss areas of application of various TEM techniques, describe the TEM sample preparation technique, and review case studies to demonstrate the power of the TEM technique

  8. Electronic adherence monitoring device performance and patient acceptability: a randomized control trial.

    Chan, Amy Hai Yan; Stewart, Alistair William; Harrison, Jeff; Black, Peter Nigel; Mitchell, Edwin Arthur; Foster, Juliet Michelle

    2017-05-01

    To investigate the performance and patient acceptability of an inhaler electronic monitoring device in a real-world childhood asthma population. Children 6 to 15 years presenting with asthma to the hospital emergency department and prescribed inhaled corticosteroids were included. Participants were randomized to receive a device with reminder features enabled or disabled for use with their preventer. Device quality control tests were conducted. Questionnaires on device acceptability, utility and ergonomics were completed at six months. A total of 1306 quality control tests were conducted; 84% passed pre-issue and 87% return testing. The most common failure reason was actuation under-recording. Acceptability scores were high, with higher scores in the reminder than non-reminder group (median, 5 th -95 th percentile: 4.1, 3.1-5.0 versus 3.7, 2.3-4.8; p 90%) rated the device easy to use. Feedback was positive across five themes: device acceptability, ringtone acceptability, suggestions for improvement, effect on medication use, and effect on asthma control. This study investigates electronic monitoring device performance and acceptability in children using quantitative and qualitative measures. Results indicate satisfactory reliability, although failure rates of 13-16% indicate the importance of quality control. Favorable acceptability ratings support the use of these devices in children.

  9. Ignitor electrode system design for the pulses electron irradiators device

    Lely Susita RM; Ihwanul Aziz

    2016-01-01

    The designed ignitor electrode system is a system used to initiate the plasma discharge. It consists of two pieces which are placed on both side of the plasma vessel. Each of the ignitor electrode system consists of a cathode, an anode and insulator between the cathode and the anode. The best cathode material for ignitor electrode system is Mg due to its lowest ion erosion rate (γi =11.7 μg/C) and its low cohesive energy (1.51 eV). The specifications of ignitor electrode system designed for the pulse electron irradiators is as follow: Mg cathode materials in the form of rod having a diameter of 6.35 mm and length of 76.75 mm. Anode material are made of non magnetic of SS 304 cylinder shaped with an outer diameter of 88.53 mm, an inner diameter of 81.53 mm and a thickness of 3.50 mm. Insulating material between the cathode and the anode is made of teflon cylinder shaped, outer diameter of 9.50 mm, an inner diameter of 6.35 mm and a length of 30 mm. Based on the ignitor electrode system design, the next step is construction and function test of the ignitor electrode system. (author)

  10. Photovoltaic device

    Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

    2017-03-21

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  11. Photovoltaic device

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  12. Photovoltaic device

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  13. An electroluminescence device for printable electronics using coprecipitated ZnS:Mn nanocrystal ink

    Toyama, T; Hama, T; Adachi, D; Nakashizu, Y; Okamoto, H

    2009-01-01

    Electroluminescence (EL) devices for printable electronics using coprecipitated ZnS:Mn nanocrystal (NC) ink are demonstrated. The EL properties of these devices were investigated along with the structural and optical properties of ZnS:Mn NCs with an emphasis on their dependence on crystal size. Transmission electron microscopy and x-ray diffraction studies revealed that the NCs, with a crystal size of 3-4 nm, are nearly monodisperse; the crystal size can be controlled by the Zn 2+ concentration in the starting solution for coprecipitation. The results of optical studies indicate the presence of quantum confinement effects; in addition, the NC surfaces are well passivated, regardless of the crystal size. Finally, an increase in the luminance of EL devices with a decrease in crystal size is observed, which suggests the excitation mechanism of ZnS:Mn NC EL devices.

  14. Personalized Remote Monitoring of the Atrial Fibrillation Patients with Electronic Implant Devices

    Gokce B. Laleci

    2011-01-01

    Full Text Available Cardiovascular Implantable Electronic Devices (CIED are gaining popularity in treating patients with heart disease. Remote monitoring through care management systems enables continuous surveillance of such patients by checking device functions and clinical events. These care management systems include decision support capabilities based on clinical guidelines. Data input to such systems are from different information sources including medical devices and Electronic Health Records (EHRs. Although evidence-based clinical guidelines provides numerous benefits such as standardized care, reduced costs, efficient and effective care management, they are currently underutilized in clinical practice due to interoperability problems among different healthcare data sources. In this paper, we introduce the iCARDEA care management system for atrial fibrillation patients with implant devices and describe how the iCARDEA care plan engine executes the clinical guidelines by seamlessly accessing the EHR systems and the CIED data through standard interfaces.

  15. Off-axis electron holography for the measurement of active dopants in silicon semiconductor devices

    Cooper, David

    2016-01-01

    There is a need in the semiconductor industry for a dopant profiling technique with nm-scale resolution. Here we demonstrate that off-axis electron holography can be used to provide maps of the electrostatic potential in semiconductor devices with nm-scale resolution. In this paper we will discuss issues regarding the spatial resolution and precision of the technique. Then we will discuss problems with specimen preparation and how this affects the accuracy of the measurements of the potentials. Finally we show results from experimental off-axis electron holography applied to nMOS and pMOS CMOS devices grown on bulk silicon and silicon- on-insulator type devices and present solutions to common problems that are encountered when examining these types of devices. (paper)

  16. Medical device integration: CIOs must bridge the digital divide between devices and electronic medical records.

    Raths, David

    2009-02-01

    To get funding approved for medical device integration, ClOs suggest focusing on specific patient safety or staff efficiency pain points. Organizations that make clinical engineering part of their IT team report fewer chain-of-command issues. It also helps IT people understand the clinical goals because the engineering people have been working closely with clinicians for years. A new organization has formed to work on collaboration between clinical engineers and IT professionals. For more information, go to www.ceitcollaboration.org. ECRI Institute has written a guide to handling the convergence of medical technology and hospital networks. Its "Medical Technology for the IT Professional: An Essential Guide for Working in Today's Healthcare Setting" also details how IT professionals can assist hospital technology planning and acquisition, and provide ongoing support for IT-based medical technologies. For more information, visit www.ecri.org/ITresource.

  17. Origin of perpendicular magnetic anisotropy in Co/Ni multilayers

    Arora, M.; Hübner, R.; Suess, D.; Heinrich, B.; Girt, E.

    2017-07-01

    We studied the variation in perpendicular magnetic anisotropy of (111) textured Au /N ×[Co /Ni ]/Au films as a function of the number of bilayer repeats N . The ferromagnetic resonance and superconducting quantum interference device magnetometer measurements show that the perpendicular magnetic anisotropy of Co/Ni multilayers first increases with N for N ≤10 and then moderately decreases for N >10 . The model we propose reveals that the decrease of the anisotropy for N reduction in the magnetoelastic and magnetocrystalline anisotropies. A moderate decrease in the perpendicular magnetic anisotropy for N >10 is due to the reduction in the magnetocrystalline and the surface anisotropies. To calculate the contribution of magnetoelastic anisotropy in the Co/Ni multilayers, in-plane and out-of-plane x-ray diffraction measurements are performed to determine the spacing between Co/Ni (111) and (220) planes. The magnetocrystalline bulk anisotropy is estimated from the difference in the perpendicular and parallel g factors of Co/Ni multilayers that are measured using the in-plane and out-of-plane ferromagnetic resonance measurements. Transmission electron microscopy has been used to estimate the multilayer film roughness. These values are used to calculate the roughness-induced surface and magnetocrystalline anisotropy coefficients as a function of N .

  18. The impact of an electronic monitoring and reminder device on patient compliance with antihypertensive therapy

    Christensen, Arne; Christrup, Lona Louring; Fabricius, Paul Erik

    2010-01-01

    . In the first half of the study, patients using the device reported 91% compliance versus 85% in the control group. This difference diminished after crossover (88 versus 86%). BP was not affected. Electronic monitoring data on compliance revealed taking, dosing and timing compliance between 45 and 52% in study...... to be effective in improving patient compliance to some extent, but the combined effect has not been documented. OBJECTIVE: To assess the impact of an electronic reminder and monitoring device on patient compliance and BP control. METHODS: All patients received medical treatment with telmisartan once daily...... and were randomized to either electronic compliance monitoring with a reminder and monitoring device or standard therapy for 6 months. Both groups were crossed over after 6 months. Intervention effectiveness was assessed using self-reported compliance and BP. RESULTS: Data from 398 patients were analysed...

  19. Correlation between (in)commensurate domains of multilayer epitaxial graphene grown on SiC(0 0 0 1-bar ) and single layer electronic behavior

    Mendes-de-Sa, T G; Goncalves, A M B; Matos, M J S; Coelho, P M; Magalhaes-Paniago, R; Lacerda, R G

    2012-01-01

    A systematic study of the evolution of the electronic behavior and atomic structure of multilayer epitaxial graphene (MEG) as a function of growth time was performed. MEG was obtained by sublimation of a 4H-SiC(0 0 0 1-bar ) substrate in an argon atmosphere. Raman spectroscopy and x-ray diffraction were carried out in samples grown for different times. For 30 min of growth the sample Raman signal is similar to that of graphite, while for 60 min the spectrum becomes equivalent to that of exfoliated graphene. Conventional x-ray diffraction reveals that all the samples have two different (0001) lattice spacings. Grazing incidence x-ray diffraction shows that thin films are composed of rotated (commensurate) structures formed by adjacent graphene layers. Thick films are almost completely disordered. This result can be directly correlated to the single layer electronic behavior of the films as observed by Raman spectroscopy. Finally, to understand the change in lattice spacings as a result of layer rotation, we have carried out first principles calculations (using density functional theory) of the observed commensurate structures. (paper)

  20. Proceedings of the national conference on vacuum electronic devices and applications: souvenir and extended abstracts

    2012-01-01

    Vacuum electronic devices have carved out a strategic niche for themselves in the areas of satellite based communications and broadcasting, industrial and medical accelerators, and, high power RF systems required in high energy particle accelerators, accelerator driven sub-critical systems, plasma heating systems in nuclear fusion reactors for power generation etc. Besides, these devices continue to have their major applications in various defence related communication, RADAR and ECM systems. Papers relevant to INIS are indexed separately

  1. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  2. Electronic Equipment of Self-Actuated Mobile Device for Load Carrying

    T. Janecka

    1994-12-01

    Full Text Available The device dealt in this work is determined namely for carrying invalid persons on various types of stairs or other not flat surfaces. But it can serve also to other purposes.To enable fulfilling all given demands, the design was consulted with other research workers solving the tasks of similar features.Resulting mechanical device, enabling aspects of movement required, is controlled by electronic and microprocessor circuits that obtain the input information from sensitive units investigating the terrain.

  3. Ion implantation in compound semiconductors for high-performance electronic devices

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-01-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

  4. The influence of electron-beam irradiation on some mechanical properties of commercial multilayer flexible packaging materials (PET MET/LDPE)

    Nogueira, Beatriz R.; Oliveira, Vitor M.; Moura, Esperidiana A.B.; Ortiz, Angel V.

    2009-01-01

    The treatment with electron-beam radiation is a promising approach to the controllable modification of the properties of the polymeric flexible packaging materials, in order to adjust their properties. In recent years electron-beam irradiation have been efficiently applied in the flexible packaging industry to promote crosslinking and scission of the polymeric chains in order to improve material mechanical properties. On the other hand, ionizing irradiation can also affect the polymeric materials itself leading to a production of free radicals. These free radicals can in turn lead to degradation and or cross-linking phenomena. The influence of electron beam irradiation on mechanical properties of commercial multilayer flexible packaging materials based on laminated low-density polyethylene (LDPE) and metallized poly(ethylene terephthalate) (PET) was studied. The PETmet/LDPE structure was irradiated with doses up to 120 kGy, using a 1.5 MeV electron beam accelerator, dose rate 11.22kGy/s, at room temperature in presence of air. The results showed that penetration resistance of the irradiated PETmet/LDPE film increase up to 10 %, except for radiation dose of 30 kGy that resulted in a slight decrease of ca. 3%, while the sealing resistance decreased ca. 8-26% in all doses (p < 0.05). In addition, the samples of PETmet/LDPE film at 45, 60, 75 and 105 kGy presented a gain up to 18 % in their original tensile strength at break, a gain of ca. 38% in their original elongation at break for radiation dose of 45 kGy and ca. 17% for radiation doses of 60, 75 and 120 kGy. (author)

  5. A video-amplifier device for the transmission-type electron microscope ELMISCOP I of Siemens

    Groboth, G.; Hoerl, E.M.

    1975-01-01

    In order to get a visual image of the sample at the final screen of a transmission-type electron microscope and to keep at the same time the sample at low temperature a video-amplifier device has been developed by the authors. Details about its design and the necessary reconstruction of the electron microscope equipment are given. The beam current density at the transparent screen is reduced to 10 -12 -10 -13 A.cm -2 . Moreover the costs of this video-amplifier device are lower than those available. (CR)

  6. Electronic Devices for Controlling the Very High Voltage in the ALICE TPC Detector

    Boccioli, Marco

    2007-01-01

    The Time Projection Chamber (TPC) is the core of the ALICE experiment at CERN. The TPC Very High Voltage project covers the development of the control system for the power supply that generates the 100kV necessary for the drift field in the TPC. This paper reports on the project progress, introducing the control system architecture from the electronics up to the control level. All the electronic devices will be described, highlighting their communication issues, and the challenges in integrating these devices in a PLC-based control system.

  7. Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review

    Kim, Kyong Nam; Lee, Seung Min; Mishra, Anurag [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Yeom, Geun Young, E-mail: gyyeom@skku.edu [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2016-01-01

    Recently, non-equilibrium atmospheric pressure plasma, especially those operated at low gas temperatures, have become a topic of great interest for the processing of flexible and printed electronic devices due to several benefits such as the reduction of process and reactor costs, the employment of easy-to-handle apparatuses and the easier integration into continuous production lines. In this review, several types of typical atmospheric pressure plasma sources have been addressed, and the processes including surface treatment, texturing and sintering for application to flexible and printed electronic devices have been discussed.

  8. Radiation effects and soft errors in integrated circuits and electronic devices

    Fleetwood, D M

    2004-01-01

    This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th

  9. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (5th)

    1994-10-07

    Associazione Elettrotecnica e Elettronica Italia Circuiti Componente Tecnologia Elettroniche CECC CENELEC Electronic Components Committee EC The Commission...compared to the results of 2D transient device simulations in cylinder coordinates as well as to 3D transient device simulations (Table 1, 2). M3 In...non- Sabs. abs. drift charge 3.3 3.7 6.3 6.1 M Qdrft / feCM 3D diffusion 6.3 13.6 3.0 12.8 device charge simu- Qdiffl fC V M (E Wl ation "R’ L L

  10. Emerging technologies to power next generation mobile electronic devices using solar energy

    Dewei JIA; Yubo DUAN; Jing LIU

    2009-01-01

    Mobile electronic devices such as MP3, mobile phones, and wearable or implanted medical devices have already or will soon become a necessity in peoples' lives.However, the further development of these devices is restricted not only by the inconvenient charging process of the power module, but also by the soaring prices of fossil fuel and its downstream chain of electricity manipulation.In view of the huge amount of solar energy fueling the world biochemically and thermally, a carry-on electricity harvester embedded in portable devices is emerging as a most noteworthy research area and engineering practice for a cost efficient solution. Such a parasitic problem is intrinsic in the next generation portable devices. This paper is dedicated to presenting an overview of the photovoltaic strategy in the chain as a reference for researchers and practitioners committed to solving the problem.

  11. Remote monitoring of cardiovascular implanted electronic devices: a paradigm shift for the 21st century.

    Cronin, Edmond M; Varma, Niraj

    2012-07-01

    Traditional follow-up of cardiac implantable electronic devices involves the intermittent download of largely nonactionable data. Remote monitoring represents a paradigm shift from episodic office-based follow-up to continuous monitoring of device performance and patient and disease state. This lessens device clinical burden and may also lead to cost savings, although data on economic impact are only beginning to emerge. Remote monitoring technology has the potential to improve the outcomes through earlier detection of arrhythmias and compromised device integrity, and possibly predict heart failure hospitalizations through integration of heart failure diagnostics and hemodynamic monitors. Remote monitoring platforms are also huge databases of patients and devices, offering unprecedented opportunities to investigate real-world outcomes. Here, the current status of the field is described and future directions are predicted.

  12. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  13. Compact toroidal energy storage device with relativistically densified electrons through the use of travelling magnetic waves

    Peter, W.; Faehl, R.J.

    1983-01-01

    A new concept for a small compact multimegajoule energy storage device utilizing relativistically densified electron beam circulating in a torus is presented. The electron cloud is produced through inductive charge injection by a travelling magnetic wave circulating the torus. Parameters are given for two representative toroidal energy storage devices, consisting of 1 m and 32 m in radius respectively, which could store more than 4 x 10 17 electrons and 30' MJ in energy. The concept utilizes the idea that large electric and magnetic fields can be produced by a partially space-charge neutralized intense relativistic electron beam which could become many orders of magnitude greater than the externally applied field confining the beam. In the present approach, the electron cloud densification can be achieved gradually by permitting multiple traversals of the magnetic wave around the torus. The magnetic mirror force acts on the orbital magnetic electron dipole moment and completely penetrates the entire electron cloud. As the electrons gain relativistic energies, the beam can be continuously densified at the front of the travelling wave, where the magnetic field is rising with time. The use of travelling magnetic wave to accelerate an electron cloud and the use of large electric field at the thusly accelerated cloud form the basis for a high beam intensity and hence high energy storage. Technical considerations and several potential applications, which include the driving of a powerful gyrotron, are discussed

  14. Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

    Horacek, Miroslav

    2005-01-01

    The use of a thinned back-side illuminated charge coupled device chip as two-dimensional sensor working in direct electron bombarded mode at optimum energy of the incident signal electrons is demonstrated and the measurements of the modulation transfer function (MTF) and detective quantum efficiency (DQE) are described. The MTF was measured for energy of electrons 4 keV using an edge projection method and a stripe projection method. The decrease of the MTF for a maximum spatial frequency of 20.8 cycles/mm, corresponding to the pixel size 24x24 μm, is 0.75≅-2.5 dB, and it is approximately the same for both horizontal and vertical directions. DQE was measured using an empty image and the mixing factor method. Empty images were acquired for energies of electrons from 2 to 5 keV and for various doses, ranging from nearly dark image to a nearly saturated one. DQE increases with increasing energy of bombarded electrons and reaches 0.92 for electron energy of 5 keV. For this energy the detector will be used for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope

  15. Designing electronic anisotropy of three-dimensional carbon allotropes for the all-carbon device

    Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Li, Xiu-Yan [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Wang, Ru-Zhi; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China)

    2015-07-13

    Extending two-dimensional (2D) graphene nanosheets to a three-dimensional (3D) network can enhance the design of all-carbon electronic devices. Based on the great diversity of carbon atomic bonding, we have constructed four superlattice-type carbon allotrope candidates, containing sp{sup 2}-bonding transport channels and sp{sup 3}-bonding insulating layers, using density functional theory. It was demonstrated through systematic simulations that the ultra-thin insulating layer with only three-atom thickness can switch off the tunneling transport and isolate the electronic connection between the adjacent graphene strips, and these alternating perpendicular strips also extend the electron road from 2D to 3D. Designing electronic anisotropy originates from the mutually perpendicular π bonds and the rare partial charge density of the corresponding carriers in insulating layers. Our results indicate the possibility of producing custom-designed 3D all-carbon devices with building blocks of graphene and diamond.

  16. Exploring interface morphology of a deeply buried layer in periodic multilayer

    Das, Gangadhar; Srivastava, A. K.; Tiwari, M. K., E-mail: mktiwari@rrcat.gov.in [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India); Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, Maharashtra (India); Khooha, Ajay; Singh, A. K. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India)

    2016-06-27

    Long-term durability of a thin film device is strongly correlated with the nature of interface structure associated between different constituent layers. Synthetic periodic multilayer structures are primarily employed as artificial X-ray Bragg reflectors in many applications, and their reflection efficiency is predominantly dictated by the nature of the buried interfaces between the different layers. Herein, we demonstrate the applicability of the combined analysis approach of the X-ray reflectivity and grazing incidence X-ray fluorescence measurements for the reliable and precise determination of a buried interface structure inside periodic X-ray multilayer structures. X-ray standing wave field (XSW) generated under Bragg reflection condition is used to probe the different constituent layers of the W- B{sub 4}C multilayer structure at 10 keV and 12 keV incident X-ray energies. Our results show that the XSW assisted fluorescence measurements are markedly sensitive to the location and interface morphology of a buried layer structure inside a periodic multilayer structure. The cross sectional transmission electron microscopy results obtained on the W-B{sub 4}C multilayer structure provide a deeper look on the overall reliability and accuracy of the XSW method. The method described here would also be applicable for nondestructive characterization of a wide range of thin film based semiconductor and optical devices.

  17. A Novel Electronic Device for Measuring Urine Flow Rate: A Clinical Investigation

    Aliza Goldman; Hagar Azran; Tal Stern; Mor Grinstein; Dafna Wilner

    2017-01-01

    Objective: Currently, most vital signs in the intensive care unit (ICU) are electronically monitored. However, clinical practice for urine output (UO) measurement, an important vital sign, usually requires manual recording of data that is subject to human errors. In this study, we assessed the ability of a novel electronic UO monitoring device to measure real-time hourly UO versus current clinical practice. Design: Patients were connected to the RenalSense Clarity RMS Sensor Kit with a sensor...

  18. Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

    Plimley, Brian, E-mail: brian.plimley@gmail.com [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Coffer, Amy; Zhang, Yigong [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Vetter, Kai [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

    2016-08-11

    Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

  19. Vertical GaN Devices for Power Electronics in Extreme Environments

    2016-03-31

    Vertical GaN Devices for Power Electronics in Extreme Environments Isik C. Kizilyalli (1), Robert J. Kaplar (2), O. Aktas (1), A. M. Armstrong (2...electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical

  20. Spectromicroscopic Insights into the Morphology and Interfaces of Operational Organic Electronic Devices

    Du, Xiaoyan

    2017-01-01

    Organic electronics, e.g., organic field-effect transistors (OFETs), organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), have attracted strong interest in both academia and industry during the last decades due to their unique capabilities offered by organic semiconductors. The micro-/nano-structures in active layers and the interface engineering in organic electronics are extremely important for desired device functionalities. In this thesis, the structure-function relations...

  1. Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

    Yazdi, Sadegh; Kasama, Takeshi; Beleggia, Marco

    2015-01-01

    Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron...... holography to characterize an electrically-biased Si p-. n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic...

  2. Spatial distribution of electrons on a superfluid helium charge-coupled device

    Takita, Maika; Bradbury, F R; Lyon, S A; Gurrieri, T M; Wilkel, K J; Eng, Kevin; Carroll, M S

    2012-01-01

    Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking 10 9 pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels.

  3. Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

    Gamzina, Diana

    Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

  4. The use and risk of portable electronic devices while cycling among different age groups.

    Goldenbeld, C. Houtenbos, M. Ehlers, E. & Waard, D. de

    2012-01-01

    In The Netherlands, a survey was set up to monitor the extent of the use of portable, electronic devices while cycling amongst different age groups of cyclists and to estimate the possible consequences for safety. The main research questions concerned age differences in the self-reported use of

  5. The use and risk of portable electronic devices while cycling among different age groups

    Goldenbeld, C.; Houtenbos, M.; Ehlers, E.; De Waard, D.

    Introduction: In the Netherlands, a survey was set up to monitor the extent of the use of portable, electronic devices while cycling amongst different age groups of cyclists and to estimate the possible consequences for safety. Method: The main research questions concerned age differences in the

  6. 78 FR 63492 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    2013-10-24

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-847] Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is...

  7. 77 FR 34063 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    2012-06-08

    ... Phones and Tablet Computers, and Components Thereof Institution of Investigation AGENCY: U.S... the United States after importation of certain electronic devices, including mobile phones and tablet... mobile phones and tablet computers, and components thereof that infringe one or more of claims 1-3 and 5...

  8. Near field resonant inductive coupling to power electronic devices dispersed in water

    Kuipers, J.; Bruning, H.; Bakker, S.; Rijnaarts, H.H.M.

    2012-01-01

    The purpose of this research was to investigate inductive coupling as a way to wirelessly power electronic devices dispersed in water. The most important parameters determining this efficiency are: (1) the coupling between transmitting and receiving coils, (2) the quality factors of the transmitting

  9. Radiation effects and hardness of semiconductor electronic devices for nuclear industry

    Payat, R.; Friant, A.

    1988-01-01

    After a brief review of industrial and nuclear specificity and radiation effects in electronics components (semiconductors) the need for a specific test methodology of semiconductor devices is emphasized. Some studies appropriate for nuclear industry at D. LETI/DEIN/CEN-SACLAY are related [fr

  10. 76 FR 50253 - Certain Portable Electronic Devices and Related Software; Notice of Institution of Investigation...

    2011-08-12

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-797] Certain Portable Electronic Devices and....C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on July 8, 2011, under section...

  11. 78 FR 32689 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    2013-05-31

    ... INTERNATIONAL TRADE COMMISSION [Docket No 2958] Certain Portable Electronic Communications Devices... Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled...

  12. 78 FR 22899 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    2013-04-17

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-878] Certain Electronic Devices Having... pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on March 12, 2013...

  13. 78 FR 116 - Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of...

    2013-01-02

    ... INTERNATIONAL TRADE COMMISSION [DN 2927] Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has...

  14. 78 FR 6834 - Certain Cases for Portable Electronic Devices; Institution of Investigation

    2013-01-31

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-867] Certain Cases for Portable Electronic Devices; Institution of Investigation AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on...

  15. 76 FR 60870 - In the Matter of Certain Electronic Devices With Communication Capabilities, Components Thereof...

    2011-09-30

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-808] In the Matter of Certain Electronic Devices... Investigation; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade.... International Trade Commission on August 16, 2011, under section 337 of the Tariff Act of 1930, as amended, 19 U...

  16. 77 FR 68828 - Certain Cases for Portable Electronic Devices; Institution of Investigation Pursuant to the...

    2012-11-16

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-861] Certain Cases for Portable Electronic Devices; Institution of Investigation Pursuant to the Tariff Act of 1930, as Amended AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with...

  17. 76 FR 70490 - Certain Electronic Devices With Graphics Data Processing Systems, Components Thereof, and...

    2011-11-14

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-813] Certain Electronic Devices With... AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on September 22, 2011, under section 337 of...

  18. 76 FR 47610 - Certain Electronic Digital Media Devices and Components Thereof; Notice of Institution of...

    2011-08-05

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-796] Certain Electronic Digital Media Devices and.... 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on July 5, 2011, under section...

  19. 75 FR 38118 - In the Matter of Certain Electronic Devices With Image Processing Systems, Components Thereof...

    2010-07-01

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-724] In the Matter of Certain Electronic Devices... AGENCY: U.S. International Trade Commission. ACTION: Institution of investigation pursuant to 19 U.S.C. 1337. SUMMARY: Notice is hereby given that a complaint was filed with the U.S. International Trade...

  20. 77 FR 11588 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof

    2012-02-27

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-831] Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof AGENCY: U.S. International Trade Commission... Trade Commission on January 10, 2012, under section 337 of the Tariff Act of 1930, as amended, 19 U.S.C...

  1. 75 FR 39971 - In the Matter of Certain Electronic Imaging Devices; Notice of Investigation

    2010-07-13

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-726] In the Matter of Certain Electronic Imaging Devices; Notice of Investigation AGENCY: U.S. International Trade Commission. ACTION: Institution of....S. International Trade Commission on May 13, 2010, under section 337 of the Tariff Act of 1930, as...

  2. 77 FR 20847 - Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to...

    2012-04-06

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade.... International Trade Commission on February 7, 2012, and an amended complaint was filed with the U.S...

  3. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  4. Nanocellulose-enabled electronics, energy harvesting devices, smart materials and sensors: a review

    Ronald Sabo; Aleksey Yermakov; Chiu Tai Law; Rani Elhajjar

    2016-01-01

    Cellulose nanomaterials have a number of interesting and unique properties that make them well-suited for use in electronics applications such as energy harvesting devices, actuators and sensors. Cellulose nanofibrils and nanocrystals have good mechanical properties, high transparency, and low coefficient of thermal expansion, among other properties that facilitate...

  5. A benchmark study of commercially available copper nanoparticle inks for application in organic electronic devices

    Polino, G.; Abbel, R.; Shanmugam, S.; Bex, G.J.P.; Hendriks, R.; Brunetti, F.; Di Carlo, A.; Andriessen, R.; Galagan, Y.

    2016-01-01

    A set of three commercial copper nanoparticle based inkjet inks has been benchmarked with respect to their potential to form conducting printed structures for future applications in organic electronic devices. Significant differences were observed in terms of jetting properties, spreading behaviour

  6. 75 FR 3154 - Children's Products Containing Lead; Exemptions for Certain Electronic Devices

    2010-01-20

    ... that use solar power or other power sources), such as music players, headphones, some toys and games... basis that replacing or installing parts of a children's electronic device is not a children's activity... are not installed. We decline to revise the rule as suggested by some commenters. We have determined...

  7. 76 FR 24051 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

    2011-04-29

    ..., Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components Thereof... certain electronic devices, including mobile phones, mobile tablets, portable music players, and computers...''). The complaint further alleges that an industry in the United States exists or is in the process of...

  8. Effect of interface of electronics devices constructed with different materials to X-ray

    Mu Weibing; Chen Panxun

    2003-01-01

    The behavior of X-ray nearby interface which is constructed with different materials is introduced in this paper. And the affect to electronics devices of this behavior is analyzed, the affect factors of four interfaces are calculated by Monte-Carlo method

  9. Five Ways to Hack and Cheat with Bring-Your-Own-Device Electronic Examinations

    Dawson, Phillip

    2016-01-01

    Bring-your-own-device electronic examinations (BYOD e-exams) are a relatively new type of assessment where students sit an in-person exam under invigilated conditions with their own laptop. Special software restricts student access to prohibited computer functions and files, and provides access to any resources or software the examiner approves.…

  10. Cardiac implantable electronic device and associated risk of infective endocarditis in patients undergoing aortic valve replacement

    Østergaard, Lauge; Valeur, Nana; Bundgaard, Henning

    2017-01-01

    Aims: Patients undergoing aortic valve replacement (AVR) are at increased risk of infective endocarditis (IE) as are patients with a cardiac implantable electronic device (CIED). However, few data exist on the IE risk after AVR surgery in patients with a CIED. Methods and results: Using the Danish...

  11. 77 FR 11157 - Certain Portable Electronic Devices and Related Software; Final Determination Finding No...

    2012-02-24

    ... investigation). The complaint named Apple Inc. as the Respondent. On October 17, 2011, the ALJ issued his final... Commission has subject matter jurisdiction and that Apple did not contest that the Commission has in rem and... electronic devices and related software. Regarding infringement, the ALJ found that Apple does not infringe...

  12. Complex composition film condensation in the sluice device of an electron microscope

    Kukuev, V.I.; Lesovoj, M.V.; Vlasov, D.A.; Malygin, M.V.; Domashevskaya, Eh.P.; Tomashpol'skij, Yu.Ya.

    1994-01-01

    Based on the sluice device of an electron microscope a system is developed for material laser evaporation and vapor condensation on a substrate, situated in the microscope specimen holder. Substrate heating by laser radiation to 100 deg C is used. The system is applied for investigating growth of high-temperature superconductor films

  13. 75 FR 4583 - In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players...

    2010-01-28

    ..., Including Mobile Phones, Portable Music Players, and Computers; Notice of Investigation AGENCY: U.S... music players, and computers, by reason of infringement of certain claims of U.S. Patent Nos. 6,714,091... importation of certain electronic devices, including mobile phones, portable music players, or computers that...

  14. Electronic device, system on chip and method for monitoring a data flow

    2012-01-01

    An electronic device is provided which comprises a plurality of processing units (IP1-IP6), a network-based inter-connect (N) coupled to the processing units (IP1-IP6) and at least one monitoring unit (P1, P2) for monitoring a data flow of at least one first communication path between the processing

  15. Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems

    Ha, Sieu D.; Shi, Jian; Meroz, Yasmine; Mahadevan, L.; Ramanathan, Shriram

    2014-12-01

    Strongly correlated electron systems such as the rare-earth nickelates (R NiO3 , R denotes a rare-earth element) can exhibit synapselike continuous long-term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field-driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and nonassociative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogs may provide insight into biological processes such as decision making, learning, and adaptation, while facilitating advanced parallel information processing in hardware.

  16. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2017-04-04

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  17. Bi-directional magnetic resonance based wireless power transfer for electronic devices

    Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan; Mishra, Debasish

    2015-01-01

    In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency

  18. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    Adrian Iovan

    2012-12-01

    Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  19. Bi-directional magnetic resonance based wireless power transfer for electronic devices

    Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan; Mishra, Debasish [Department of Electronics and Instrumentation Engineering, Institute of Technical Education and Research, Siksha ‘O’ Anushandhan University, Bhubaneswar 751030 (India)

    2015-09-28

    In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.

  20. Non-equilibrium Green function method: theory and application in simulation of nanometer electronic devices

    Do, Van-Nam

    2014-01-01

    We review fundamental aspects of the non-equilibrium Green function method in the simulation of nanometer electronic devices. The method is implemented into our recently developed computer package OPEDEVS to investigate transport properties of electrons in nano-scale devices and low-dimensional materials. Concretely, we present the definition of the four real-time Green functions, the retarded, advanced, lesser and greater functions. Basic relations among these functions and their equations of motion are also presented in detail as the basis for the performance of analytical and numerical calculations. In particular, we review in detail two recursive algorithms, which are implemented in OPEDEVS to solve the Green functions defined in finite-size opened systems and in the surface layer of semi-infinite homogeneous ones. Operation of the package is then illustrated through the simulation of the transport characteristics of a typical semiconductor device structure, the resonant tunneling diodes. (review)

  1. Multilayer polymer light-emitting diodes by blade coating method

    Tseng, Shin-Rong; Meng, Hsin-Fei; Lee, Kuan-Chen; Horng, Sheng-Fu

    2008-10-01

    Multilayer polymer light-emitting diodes fabricated by blade coating are presented. Multilayer of polymers can be easily deposited by blade coating on a hot plate. The multilayer structure is confirmed by the total thickness and the cross section view in the scanning electron microscope. The film thickness variation is only 3.3% in 10cm scale and the film roughness is about 0.3nm in the micron scale. The efficiency of single layer poly(para-phenylene vinylene) copolymer Super Yellow and poly(9,9-dioctylfluorene) (PFO, deep blue) devices are 9 and 1.7cd/A, respectively, by blade coating. The efficiency of the PFO device is raised to 2.9cd/A with a 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) hole-blocking layer and to 2.3cd/A with a poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenylamine)] elec-tron-blocking layer added by blade coating.

  2. Progress of alternative sintering approaches of inkjet-printed metal inks and their application for manufacturing of flexible electronic devices

    Wünscher, S.; Abbel, R.; Perelaer, J.; Schubert, U.S.

    2014-01-01

    Well-defined high resolution structures with excellent electrical conductivities are key components of almost every electronic device. Producing these by printing metal based conductive inks on polymer foils represents an important step forward towards the manufacturing of plastic electronic

  3. Microdiffraction imaging—a suitable tool to characterize organic electronic devices

    Clemens Liewald

    2015-10-01

    Full Text Available Tailoring device architecture and active film morphology is crucial for improving organic electronic devices. Therefore, knowledge about the local degree of crystallinity is indispensable to gain full control over device behavior and performance. In this article, we report on microdiffraction imaging as a new tool to characterize organic thin films on the sub-micron length scale. With this technique, which was developed at the ID01 beamline at the ESRF in Grenoble, a focused X-ray beam (300 nm diameter, 12.5 keV energy is scanned over a sample. The beam size guarantees high resolution, while material and structure specificity is gained by the choice of Bragg condition.Here, we explore the possibilities of microdiffraction imaging on two different types of samples. First, we measure the crystallinity of a pentacene thin film, which is partially buried beneath thermally deposited gold electrodes and a second organic film of fullerene C60. The data shows that the pentacene film structure is not impaired by the subsequent deposition and illustrates the potential of the technique to characterize artificial structures within fully functional electronic devices. Second, we investigate the local distribution of intrinsic polymorphism of pentacene thin films, which is very likely to have a substantial influence on electronic properties of organic electronic devices. An area of 40 μm by 40 μm is scanned under the Bragg conditions of the thin-film phase and the bulk phase of pentacene, respectively. To find a good compromise between beam footprint and signal intensity, third order Bragg condition is chosen. The scans show complementary signal distribution and hence demonstrate details of the crystalline structure with a lateral resolution defined by the beam footprint (300 nm by 3 μm.The findings highlight the range of applications of microdiffraction imaging in organic electronics, especially for organic field effect transistors and for organic solar

  4. Innovative, wearable snap connector technology for improved device networking in electronic garments

    Kostrzewski, Andrew A.; Lee, Kang S.; Gans, Eric; Winterhalter, Carole A.; Jannson, Tomasz P.

    2007-04-01

    This paper discusses Physical Optics Corporation's (POC) wearable snap connector technology that provides for the transfer of data and power throughout an electronic garment (e-garment). These connectors resemble a standard garment button and can be mated blindly with only one hand. Fully compatible with military clothing, their application allows for the networking of multiple electronic devices and an intuitive method for adding/removing existing components from the system. The attached flexible cabling also permits the rugged snap connectors to be fed throughout the standard webbing found in military garments permitting placement in any location within the uniform. Variations of the snap electronics/geometry allow for integration with USB 2.0 devices, RF antennas, and are capable of transferring high bandwidth data streams such as the 221 Mbps required for VGA video. With the trend towards providing military officers with numerous electronic devices (i.e., heads up displays (HMD), GPS receiver, PDA, etc), POC's snap connector technology will greatly improve cable management resulting in a less cumbersome uniform. In addition, with electronic garments gaining widespread adoption in the commercial marketplace, POC's technology is finding applications in such areas as sporting good manufacturers and video game technology.

  5. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  6. Study of device of electron-ion treatment of mother baking yeasts

    Ostapenkov, A.M.; Merinov, N.S.; Nazarov, V.N.; Balan, E.L.

    1980-01-01

    Devices for electron- ion treatment of mother baking yeasts are considered and classified by the way of aerions removal from the ionization zone: the first ones - by means of the electric field, the other - by air directed flux. Devices of the first type require high voltage - 20-60 kV. Electrodynamic ion generator has been applied as a device of the second type; considered is its construction, principal of operation, given are diagrams of ion flux dependence. The methods of process calculations in the generator and experimental results are presented. The main advantage of the generator of the second type is operation at low (3-5 kV) voltages. It is shown, that the yeast growth module can achieve 36% at essential increase of biomass when using these yeasts as sowing. The device can be used for biostimulation and antisepting of food raw materials

  7. Electrochemical fabrication and electronic behavior of polypyrrole nano-fiber array devices

    Liu Ling; Zhao Yaomin; Jia Nengqin; Zhou Qin; Zhao Chongjun; Yan Manming; Jiang Zhiyu

    2006-01-01

    Electrochemically active Polypyrrole (PPy) nano-fiber array device was fabricated via electrochemical deposition method using aluminum anodic oxide (AAO) membrane as template. After alkaline treatment electrochemically active PPy nano-fiber lost electrochemical activity, and became electrochemically inactive PPy. The electronic properties of PPy nano-fiber array devices were measured by means of a simple method. It was found that for an indium-tin oxide/electrochemically inactive PPy nano-fiber device, the conductivity of nano-fiber increased with the increase of voltage applied on the two terminals of nano-fiber. The electrochemical inactive PPy nano-fiber might be used as a nano-fiber switching diode. Both Au/electrochemically active PPy and Au/electrochemically inactive PPy nano-fiber devices demonstrate rectifying behavior, and might have been used for further application as nano-rectifiers

  8. Electrochemical fabrication and electronic behavior of polypyrrole nano-fiber array devices

    Ling, Liu [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Yaomin, Zhao [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Nengqin, Jia [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Qin, Zhou [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Chongjun, Zhao [Photon Craft Project, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences and Japan Science and Technology Agency, Shanghai 201800 (China); Manming, Yan [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China); Zhiyu, Jiang [Department of Chemistry, and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)

    2006-05-01

    Electrochemically active Polypyrrole (PPy) nano-fiber array device was fabricated via electrochemical deposition method using aluminum anodic oxide (AAO) membrane as template. After alkaline treatment electrochemically active PPy nano-fiber lost electrochemical activity, and became electrochemically inactive PPy. The electronic properties of PPy nano-fiber array devices were measured by means of a simple method. It was found that for an indium-tin oxide/electrochemically inactive PPy nano-fiber device, the conductivity of nano-fiber increased with the increase of voltage applied on the two terminals of nano-fiber. The electrochemical inactive PPy nano-fiber might be used as a nano-fiber switching diode. Both Au/electrochemically active PPy and Au/electrochemically inactive PPy nano-fiber devices demonstrate rectifying behavior, and might have been used for further application as nano-rectifiers.

  9. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    Shen, Xiao, E-mail: xiao.shen@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  10. Measurements of hot spots and electron beams in Z-pinch devices

    Deeney, C.

    1988-04-01

    Hot spots and Electron Beams have been observed in different types of Z-pinches. There is, however, no conclusive evidence on how either are formed although there has been much theoretical interest in both these phenomena. In this thesis, nanosecond time resolved and time correlated, X-ray and optical diagnostics, are performed on two different types of Z-pinch: a 4 kJ, 30 kV Gas Puff Z-pinch and a 28 kJ, 60 kV Plasma Focus. The aim being to study hot spots and electron beams, as well as characterise the plasma, two different Z-pinch devices. Computer codes are developed to analyse the energy and time resolved data obtained in this work. These codes model both, X-ray emission from a plasma and X-ray emission due to electron beam bombardment of a metal surface. The hot spot and electron beam parameters are measured, from the time correlated X-ray data using these computer codes. The electron beams and the hot spots are also correlated to the plasma behaviour and to each other. The results from both devices are compared with each other and with the theoretical work on hot spot and electron beam formation. A previously unreported 3-5 keV electron temperature plasma is identified, in the gas puff Z-pinch plasma, prior to the formation of the hot spots. it is shown, therefore, that the hot spots are more dense but not hotter than the surrounding plasma. Two distinct periods of electron beam generation are identified in both devices. (author)

  11. Development of Micron-Resolved Electron Spectroscopy to Study Organic Thin Films in Real Devices

    Wang, C.-H.; Fan, L.-J.; Yang, Y.-W.; Su, J.-W.; Chan, S.-W.; Chen, M.-C.

    2010-01-01

    A straightforward application of an electron energy analyzer equipped with an image detector to micron-resolved electron spectroscopic studies of organic thin film devices is reported. The electron spectroscopies implemented include synchrotron-based UPS, XPS, and Auger yield NEXAFS. Along the non-energy-dispersion direction of the analyzer, a spatial resolution of ∼40 μm is obtained through the employment of entrance slits, electrostatic lenses and segmented CCD detector. One significant benefit offered by the technique is that the electronic transport and electronic structure of the same micron-sized sample can be directly examined. The example illustrated is a top-contact organic field effect transistor (OFET) fabricated from semiconducting triethylsilylethynyl anthradithiophene and gold electrodes. It is found that an extensive out-diffusion of gold atoms to adjacent conduction channels takes place, presumably due to the inability of soft organic materials in dissipating the excess energy with which gaseous Au atoms possess.

  12. Electron beam fabrication of a microfluidic device for studying submicron-scale bacteria

    2013-01-01

    Background Controlled restriction of cellular movement using microfluidics allows one to study individual cells to gain insight into aspects of their physiology and behaviour. For example, the use of micron-sized growth channels that confine individual Escherichia coli has yielded novel insights into cell growth and death. To extend this approach to other species of bacteria, many of whom have dimensions in the sub-micron range, or to a larger range of growth conditions, a readily-fabricated device containing sub-micron features is required. Results Here we detail the fabrication of a versatile device with growth channels whose widths range from 0.3 μm to 0.8 μm. The device is fabricated using electron beam lithography, which provides excellent control over the shape and size of different growth channels and facilitates the rapid-prototyping of new designs. Features are successfully transferred first into silicon, and subsequently into the polydimethylsiloxane that forms the basis of the working microfluidic device. We demonstrate that the growth of sub-micron scale bacteria such as Lactococcus lactis or Escherichia coli cultured in minimal medium can be followed in such a device over several generations. Conclusions We have presented a detailed protocol based on electron beam fabrication together with specific dry etching procedures for the fabrication of a microfluidic device suited to study submicron-sized bacteria. We have demonstrated that both Gram-positive and Gram-negative bacteria can be successfully loaded and imaged over a number of generations in this device. Similar devices could potentially be used to study other submicron-sized organisms under conditions in which the height and shape of the growth channels are crucial to the experimental design. PMID:23575419

  13. Views of patients and professionals about electronic multicompartment medication devices: a qualitative study.

    Hall, Jill; Bond, Christine; Kinnear, Moira; McKinstry, Brian

    2016-10-17

    To explore the perceived acceptability, advantages and disadvantages of electronic multicompartment medication devices. Qualitative study using 8 focus groups and 10 individual semistructured interviews. Recordings were transcribed and analysed thematically. Strategies were employed to ensure the findings were credible and trustworthy. Community pharmacists (n=11), general practitioners (n=9), community nurses (n=12) and social care managers (n=8) were recruited from the National Health Service (NHS) and local authority services. Patients (n=15) who were current conventional or electronic multicompartment medication device users or had medication adherence problems were recruited from community pharmacies. 3 informal carers participated. Electronic multicompartment medication devices which prompt the patient to take medication may be beneficial for selected individuals, particularly those with cognitive impairment, but who are not seriously impaired, provided they have a good level of dexterity. They may also assist individuals where it is important that medication is taken at fixed time intervals. These are likely to be people who are being supported to live alone. No single device suited everybody; smaller/lighter devices were preferred but their usefulness was limited by the small number/size of storage compartments. Removing medications was often challenging. Transportability was an important factor for patients and carers. A carer's alert if medication is not taken was problematic with multiple barriers to implementation and no consensus as to who should receive the alert. There was a lack of enthusiasm among professionals, particularly among pharmacists, due to concerns about responsibility and funding for devices as well as ensuring devices met regulatory standards for storage and labelling. This study provides indicators of which patients might benefit from an electronic multicompartment medication device as well as the kinds of features to consider when

  14. Single layers and multilayers of GaN and AlN in square-octagon structure: Stability, electronic properties, and functionalization

    Gürbüz, E.; Cahangirov, S.; Durgun, E.; Ciraci, S.

    2017-11-01

    Further to planar single-layer hexagonal structures, GaN and AlN can also form free-standing, single-layer structures constructed from squares and octagons. We performed an extensive analysis of dynamical and thermal stability of these structures in terms of ab initio finite-temperature molecular dynamics and phonon calculations together with the analysis of Raman and infrared active modes. These single-layer square-octagon structures of GaN and AlN display directional mechanical properties and have wide, indirect fundamental band gaps, which are smaller than their hexagonal counterparts. These density functional theory band gaps, however, increase and become wider upon correction. Under uniaxial and biaxial tensile strain, the fundamental band gaps decrease and can be closed. The electronic and magnetic properties of these single-layer structures can be modified by adsorption of various adatoms, or by creating neutral cation-anion vacancies. The single-layer structures attain magnetic moment by selected adatoms and neutral vacancies. In particular, localized gap states are strongly dependent on the type of vacancy. The energetics, binding, and resulting electronic structure of bilayer, trilayer, and three-dimensional (3D) layered structures constructed by stacking the single layers are affected by vertical chemical bonds between adjacent layers. In addition to van der Waals interaction, these weak vertical bonds induce buckling in planar geometry and enhance their binding, leading to the formation of stable 3D layered structures. In this respect, these multilayers are intermediate between van der Waals solids and wurtzite crystals, offering a wide range of tunability.

  15. Magnetic metallic multilayers

    Hood, R.Q.

    1994-04-01

    Utilizing self-consistent Hartree-Fock calculations, several aspects of multilayers and interfaces are explored: enhancement and reduction of the local magnetic moments, magnetic coupling at the interfaces, magnetic arrangements within each film and among non-neighboring films, global symmetry of the systems, frustration, orientation of the various moments with respect to an outside applied field, and magnetic-field induced transitions. Magnetoresistance of ferromagnetic-normal-metal multilayers is found by solving the Boltzmann equation. Results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by an external magnetic field. The calculation depends on (1) geometric parameters (thicknesses of layers), (2) intrinsic metal parameters (number of conduction electrons, magnetization, and effective masses in layers), (3) bulk sample properties (conductivity relaxation times), (4) interface scattering properties (diffuse scattering versus potential scattering at the interfaces, and (5) outer surface scattering properties (specular versus diffuse surface scattering). It is found that a large negative magnetoresistance requires considerable asymmetry in interface scattering for the two spin orientations. Features of the interfaces that may produce an asymmetrical spin-dependent scattering are studied: varying interfacial geometric random roughness with no lateral coherence, correlated (quasi-periodic) roughness, and varying chemical composition of the interfaces. The interplay between these aspects of the interfaces may enhance or suppress the magnetoresistance, depending on whether it increases or decreases the asymmetry in the spin-dependent scattering of the conduction electrons

  16. Energy monitoring device for 1.5-2.4 MeV electron beams

    Fuochi, P.G., E-mail: fuochi@isof.cnr.i [CNR-ISOF, Via P. Gobetti 101, I-40129 Bologna (Italy); Lavalle, M.; Martelli, A. [CNR-ISOF, Via P. Gobetti 101, I-40129 Bologna (Italy); Kovacs, A. [Institute of Isotopes, HAS, P.O.Box 77, H-1525 Budapest (Hungary); Mehta, K. [Arbeiterstrandbad Strasse 72, Vienna, A-1210 (Austria); Kuntz, F.; Plumeri, S. [Aerial, Parc d' Innovation Rue Laurent Fries F-67400 Illkirch (France)

    2010-03-11

    An easy-to-use and robust energy monitoring device has been developed for reliable detection of day-to-day small variations in the electron beam energy, a critical parameter for quality control and quality assurance in industrial radiation processing. It has potential for using on-line, thus providing real-time information. Its working principle is based on the measurement of currents, or charges, collected by two aluminium absorbers of specific thicknesses (dependent on the beam energy), insulated from each other and positioned within a faraday cup-style aluminium cage connected to the ground. The device has been extensively tested in the energy range of 4-12 MeV under standard laboratory conditions at Institute of Isotopes and CNR-ISOF using different types of electron accelerators; namely, a TESLA LPR-4 LINAC (3-6 MeV) and a L-band Vickers LINAC (7-12 MeV), respectively. This device has been also tested in high power electron beam radiation processing facilities, one equipped with a 7-MeV LUE-8 linear accelerator used for crosslinking of cables and medical device sterilization, and the other equipped with a 10 MeV Rhodotron TT100 recirculating accelerator used for in-house sterilization of medical devices. In the present work, we have extended the application of this method to still lower energy region, i.e. from 1.5 to 2.4 MeV. Also, we show that such a device is capable of detecting deviation in the beam energy as small as 40 keV.

  17. Energy monitoring device for 1.5-2.4 MeV electron beams

    Fuochi, P. G.; Lavalle, M.; Martelli, A.; Kovács, A.; Mehta, K.; Kuntz, F.; Plumeri, S.

    2010-03-01

    An easy-to-use and robust energy monitoring device has been developed for reliable detection of day-to-day small variations in the electron beam energy, a critical parameter for quality control and quality assurance in industrial radiation processing. It has potential for using on-line, thus providing real-time information. Its working principle is based on the measurement of currents, or charges, collected by two aluminium absorbers of specific thicknesses (dependent on the beam energy), insulated from each other and positioned within a faraday cup-style aluminium cage connected to the ground. The device has been extensively tested in the energy range of 4-12 MeV under standard laboratory conditions at Institute of Isotopes and CNR-ISOF using different types of electron accelerators; namely, a TESLA LPR-4 LINAC (3-6 MeV) and a L-band Vickers LINAC (7-12 MeV), respectively. This device has been also tested in high power electron beam radiation processing facilities, one equipped with a 7-MeV LUE-8 linear accelerator used for crosslinking of cables and medical device sterilization, and the other equipped with a 10 MeV Rhodotron TT100 recirculating accelerator used for in-house sterilization of medical devices. In the present work, we have extended the application of this method to still lower energy region, i.e. from 1.5 to 2.4 MeV. Also, we show that such a device is capable of detecting deviation in the beam energy as small as 40 keV.

  18. Processing and characterization of device solder interconnection and module attachment for power electronics modules

    Haque, Shatil

    This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the

  19. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Xia, Mengseng [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Zhang, Kailiang, E-mail: kailiang_zhang@163.com [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Yang, Ruixia, E-mail: yangrx@hebut.edu.cn [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); Wang, Fang; Zhang, Zhichao; Wu, Shijian [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China)

    2017-07-15

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  20. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Xia, Mengseng; Zhang, Kailiang; Yang, Ruixia; Wang, Fang; Zhang, Zhichao; Wu, Shijian

    2017-01-01

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.