MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

2015-01-01

Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∝650 C)

International Nuclear Information System (INIS)

Sugita, K.; Hashimoto, A.; Yamamoto, A.

2009-01-01

This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∝650 C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH 3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MOVPE gallium-nitride nanostructures fabricated on ZnO nanorod templates grown from aqueous chemical solution

Energy Technology Data Exchange (ETDEWEB)

Fuendling, Soenke; Li Shunfeng; Postels, Bianca; Al-Suleiman, Mohamed; Wehmann, Hergo-Heinrich; Bakin, Andrey; Waag, Andreas, E-mail: s.fuendling@tu-bs.de [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, 38096 Braunschweig (Germany)

2009-11-15

Concerning optoelectronic devices fabricated by epitaxial methods, the combination of ZnO and GaN has promising aspects regarding their good optical properties and a relatively good lattice matching between both as compared to other foreign substrates like sapphire or silicon. Moreover ZnO nanopillar arrays may serve as a template for GaN nanopillar fabrication or for high quality GaN layers by lateral overgrowth of the ZnO nanopillars. In this work, we investigate the combination of two very different growth methods - aqueous chemical low temperature growth (ACG) for the ZnO nanopillar templates on silicon substrates and metalorganic vapor phase epitaxy (MOVPE) for the GaN overgrowth - in order to show to which extent the very cost efficient ZnO templates suit the high demands of GaN MOVPE. By a combination of annealing and photoluminescence experiments we show that the properties of the heterostructures change significantly with temperature.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

International Nuclear Information System (INIS)

Bergbauer, W; Strassburg, M; Koelper, Ch; Linder, N; Roder, C; Laehnemann, J; Trampert, A; Fuendling, S; Li, S F; Wehmann, H-H; Waag, A

2010-01-01

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO 2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 μm h -1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Bergbauer, W; Strassburg, M; Koelper, Ch; Linder, N [Osram Opto Semiconductors GmbH, Leibnizstrasse 4, D-93055 Regensburg (Germany); Roder, C; Laehnemann, J; Trampert, A [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany); Fuendling, S; Li, S F; Wehmann, H-H; Waag, A, E-mail: werner.bergbauer@osram-os.com [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

2010-07-30

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO{sub 2} masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 {mu}m h{sup -1} were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Science.gov (United States)

Bergbauer, W.; Strassburg, M.; Kölper, Ch; Linder, N.; Roder, C.; Lähnemann, J.; Trampert, A.; Fündling, S.; Li, S. F.; Wehmann, H.-H.; Waag, A.

2010-07-01

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 µm h - 1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

International Nuclear Information System (INIS)

Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

2006-01-01

The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterization of GaN films grown on GaAs by AP-MOVPE

Energy Technology Data Exchange (ETDEWEB)

Vilchis, H; Sanchez-R, V M; Escobosa, A, E-mail: heber_vil@hotmail.co [Department of Electrical Engineering, CINVESTAV-IPN, Av. Instituto Politecnico Nacional 2508 Col. San Pedro Zacatenco C.P. 07360 Mexico D.F (Mexico)

2009-05-01

In this paper we present the results of the synthesis of GaN in an AP-MOVPE system heated by infrared lamps starting from gallium nitride films obtained by nitridation of gallium arsenide. Although dependence of the characteristics of the different parameters of the deposition process on the properties of the layers has been widely studied, the influence of the nature and design of the heating source has been only scarcely reported. We show that the ratio between the two phases depends on the characteristics of the heating source, as well as on other growth parameters. Our results show a compromise between the characteristics of the photoluminescence spectra, the surface morphology and the cubic phase to hexagonal phase ratio. The growth conditions can be adjusted for optimal performance.

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Fast optical in situ spectroscopy in III-V MOVPE

Energy Technology Data Exchange (ETDEWEB)

Kaspari, C.

2007-09-29

This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

Science.gov (United States)

Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

2017-07-01

Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

Segregation of antimony in InP in MOVPE

Energy Technology Data Exchange (ETDEWEB)

Weeke, Stefan

2008-07-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Segregation of antimony in InP in MOVPE

International Nuclear Information System (INIS)

Weeke, Stefan

2008-01-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Oswald, Jiří; Pangrác, Jiří; Kuldová, Karla; Zíková, Markéta; Vyskočil, Jan; Hulicius, Eduard

2016-01-01

Roč. 480, Jan (2016), 14-22 ISSN 0921-4526 R&D Projects: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.386, year: 2016

Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

Energy Technology Data Exchange (ETDEWEB)

Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

1993-04-01

The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

DEFF Research Database (Denmark)

Kuznetsova, Nadezda; Kulkova, Irina; Semenova, Elizaveta

2014-01-01

Selective area etching and growth in the metalorganic vapor phase epitaxy (MOVPE) reactor on nano-scale structures have been examined. Using different mask orientations, crystallographic dependent etching of InP can be observed when carbon tetrabromide (CBr4) is used as an etchant. Scanning...

The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

International Nuclear Information System (INIS)

Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

2006-01-01

The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

Science.gov (United States)

Schimpke, Tilman; Lugauer, H.-J.; Avramescu, A.; Varghese, T.; Koller, A.; Hartmann, J.; Ledig, J.; Waag, A.; Strassburg, M.

2016-03-01

Today's InGaN-based white LEDs still suffer from a significant efficiency reduction at elevated current densities, the so-called "Droop". Core-shell microrods, with quantum wells (QWs) covering their entire surface, enable a tremendous increase in active area scaling with the rod's aspect ratio. Enlarging the active area on a given footprint area is a viable and cost effective route to mitigate the droop by effectively reducing the local current density. Microrods were grown in a large volume metal-organic vapor phase epitaxy (MOVPE) reactor on GaN-on-sapphire substrates with a thin, patterned SiO2 mask for position control. Out of the mask openings, pencil-shaped n-doped GaN microrod cores were grown under conditions favoring 3D growth. In a second growth step, these cores are covered with a shell containing a quantum well and a p-n junction to form LED structures. The emission from the QWs on the different facets was studied using resonant temperature-dependent photoluminescence (PL) and cathodoluminescence (CL) measurements. The crystal quality of the structures was investigated by transmission electron microscopy (TEM) showing the absence of extended defects like threading dislocations in the 3D core. In order to fabricate LED chips, dedicated processes were developed to accommodate for the special requirements of the 3D geometry. The electrical and optical properties of ensembles of tens of thousands microrods connected in parallel are discussed.

The influence of growth parameters on the structure and composition of CuGaS{sub 2} epilayers grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Branch, M.S. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)]. E-mail: Matthew.Branch@nmmu.ac.za; Berndt, P.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Weber, J. [Institute for Low Temperature Physics, University of Technology, D-01062 Dresden (Germany)

2006-04-01

The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS{sub 2} is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac){sub 2}.Et{sub 3}N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac){sub 2}.Et{sub 3}N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS{sub 2}, yet enhance the formation of Ga{sub x}S{sub y} phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material.

Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

International Nuclear Information System (INIS)

Ooike, N.; Motohisa, J.; Fukui, T.

2004-01-01

We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

New group III precursors for the MOVPE of GaAs and InP based material

International Nuclear Information System (INIS)

Hostaler, M.; Pohl, L.; Brauers, A.; Balk, P.; Frese, V.; Hovel, R.; Regel, G.K.; Hardtdegen, H.

1989-01-01

This paper presents proposals for the synthesis of several group III metal organics (In, Ga, Al compounds) and preliminary results on their use in the MOVPE (metal organic vapor phase epitaxy) of III-V semiconductors. The common feature of all these precursors is that they are saturated by inter- or intramolecular coordination. They are even non-pyrophoric and air resistant which is an interesting aspect with respect to safe handling. In addition, the compounds are liquid at room temperature with a low but sufficient vapor pressure for MOVPE without additional heating of the source

Use of halide transport in epitaxial growth of InP and related compounds

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

1996-12-31

In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

Optical characterization of MOVPE grown δ-InAs layers in GaAs

Czech Academy of Sciences Publication Activity Database

Hazdra, P.; Voves, J.; Hulicius, Eduard; Pangrác, Jiří

2005-01-01

Roč. 2, č. 4 (2005), s. 1319-1324 ISSN 1610-1634 R&D Projects: GA AV ČR(CZ) IAA1010318; GA MŠk(CZ) LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : δ-layer * MOVPE * GaAs * photoluminescence * photocurrent * photoreflectance Subject RIV: BM - Solid Matter Physics ; Magnetism

Thermodynamics of InxGa1-xN MOVPE using x-dependent interaction parameter

International Nuclear Information System (INIS)

Moon, Won Ha; Kim, Changsung Sean; Choi, Chang Hwan

2007-01-01

Thermodynamic properties of In x Ga 1-x N MOVPE are investigated using x-dependent interaction parameter. The interaction parameter (Ω=-1.3435x+6.1607 (kcal/mol)) dependent on In composition is calculated using a molecular-mechanics method to investigate the phase stability of InGaN. This parameter is more reliable than that proposed until now. The phase diagram and critical temperature (1392 K at x=0.44) of In x Ga 1-x N are also obtained. With this interaction parameter, many thermodynamic characteristics of InGaN by the change of In composition, input V/III ratio, and input mol ratio of group III sources are calculated to predict the growth condition of InGaN. These results are in agreement with other data for InGaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Simulation and characterization of the crystal growth by photoemission; Simulation et caracterisation de la croissance cristalline par photoemission

Energy Technology Data Exchange (ETDEWEB)

Fazouan, N

1994-05-16

In this thesis, we argue in favour of photoemission as an in-situ characterization tool for the homo-epitaxial growth of GaAs. The first part, is concerned with the interpretation of the origin of the photoemission oscillations as first observed by J.N. Eckstein and al during MBE growth of GaAs. To study this effect, two approaches have been used. These approaches are based on reaction surface and roughness observations to study the growth mode. They associate the photoemission current with the presence of uncovered gallium adatoms, i.e. those which do not have an arsenic atom above them. The first approach is based on chemical rate theory, whereas the second is based on an atomistic simulation of GaAs homo-epitaxy. This last approach introduces the notion of interlayer migration processes and uses a Monte Carlo technique to look at the temporal evolution of the configuration and hence the morphology. It is shown with these two approaches that the photoemission current has similar characteristics as to those of RHEED, c.g.the same oscillation period. The results obtained have shown the relationship between the photoemission oscillations amplitude and the growth mode which are determined by the mechanisms of absorption and diffusion of gallium atoms and arsenic atoms of molecules. Finally, the study of the effect of the surface reactions shows the importance of these in the case where arsenic is supplied in molecular form (As{sub 2}). The last part concerns the experimental measurements at the threshold photoemission current during epitaxial growth of GaAs by metal-organic vapour phase epitaxy (MOVPE). The objective of this experimental study is to test the good running of the photo-assisted MOVPE low pressure system and to study the possibilities offered by this as an in-situ diagnostic tool for MOVPE. (author). 101 refs., 80 figs., 6 tabs.

Electrical characterisation of Sn doped InAs grown by MOVPE

International Nuclear Information System (INIS)

Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

2008-01-01

The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Bauer, Jens; Gottschalch, Volker; Paetzelt, Hendrik [Institut fuer Anorganische Chemie, Universitaet Leipzig, Johannesallee 29, D-04103 Leipzig (Germany); Wagner, Gerald [Institut fuer Kristallographie und Mineralogie, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig (Germany); Pietsch, Ulrich [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany)

2008-07-01

Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence X-ray studies and transmission electron microscopy investigations revealed the existence of a thin Ga{sub x}In{sub 1-x}As graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.

Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE

International Nuclear Information System (INIS)

Miyake, Hideto; Yamaguchi, Motoo; Haino, Masahiro

2000-01-01

A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window - 2/2 microm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure

Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE

Energy Technology Data Exchange (ETDEWEB)

Ding Ying [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)]. E-mail: yingding@red.semi.ac.cn; Zhou Fan [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Chen Weixi [School of Physics, Peking University, Beijing 100871 (China); Wang Wei [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2007-01-15

A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1596 to 1661 nm at 90 mA and from 1585 to 1650 nm at 150 mA.An output power of 3.5 mW is obtained at 200 mA injection current under CW operation at room temperature.

Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Gocalinska, Agnieszka, E-mail: agnieszka.gocalinska@tyndall.ie; Manganaro, Marina; Dimastrodonato, Valeria; Pelucchi, Emanuele

2015-09-15

Highlights: • Metamorphic buffer layers of In{sub x}Ga{sub 1−x}As were grown by MOVPE and characterised by AFM and TEM. • It was found that AFM provides sufficient information to estimate threading defect density in metamorphic structures, even when significant roughness is present. • When planar-view TEM is lacking, a combination of cross-sectional TEM and large scale AFM can provide good evaluation of the material quality. • It is fast, cheap and non-destructive – can be very useful in development process of complicated structures, requiring multiple test growths and characterisation. - Abstract: We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 10{sup 6}) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

Semipolar MOVPE AlGaN on (10 anti 10) m-plane sapphire; MOVPE von semipolarem AlGaN auf (10 anti 10) m-plane Saphir

Energy Technology Data Exchange (ETDEWEB)

Mehnke, Frank; Stellmach, Joachim; Frentrup, Martin; Kusch, Gunnar; Wernicke, Tim; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

The energy gap of AlGaN varies between 3.4 eV and 6.2 eV and allows light emitting diodes (LED) in the ultraviolet spectral region. The authors studied semipolar (11 anti 22) AlGaN layers that were deposited on (10 anti 10) m-plane sapphire using MOVPE (metalorganic vapor phase epitaxy) without nucleation layer with a substrate temperature below 1100 C in H2 atmosphere. The layers are preferably (11 anti 22) oriented. The sample show a surface roughness between 15 and 2 nm. The Al content of the smoothest samples is about 60% determined by transmission experiments. Below 60% Al content a triangular morphology was observed, the opening angle increased with decreasing Al content. The absorption edge was 0.05 eV (GaN) to 0.35 eV (AlN) below the band edge of (0001) oriented AlGaN layers. Further investigations of semipolar AlGaN layers to study the applicability for UV LEDs are under preparation.

Characterization of low Al content Al{sub x}Ga{sub 1-x}N epitaxial films grown by atmospheric-pressure MOVPE

Energy Technology Data Exchange (ETDEWEB)

Toure, A.; Halidou, I.; Benzarti, Z.; Bchetnia, A.; El Jani, B. [Faculte des Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-Chimie des Materiaux, Faculte des Sciences de Monastir, Unite de Service Commun de Recherche ' ' High Resolution X-ray Diffractometer' ' , 5019 Monastir (Tunisia)

2012-05-15

Al{sub x}Ga{sub 1-x}N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al{sub x}Ga{sub 1-x}N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs (Conference Presentation)

Science.gov (United States)

Knauer, Arne; Brunner, Frank; Kolbe, Tim; Hagedorn, Sylvia; Kueller, Viola; Weyers, Markus

2017-02-01

UV-LEDs are of great interest for applications like disinfection, gas sensing, and phototherapy. The cost sensitive LEDs are commonly grown by MOVPE on transparent AlN/sapphire templates. The large thermal and lattice mismatch between AlN and sapphire generates a very high dislocation density (DD) and causes big challenges in strain management. The threading dislocation density should be reduced to the order of low 108cm-2 for high internal efficiency of the AlGaN based UV-LED structures. The TDD will be reduced mainly by dislocation annihilation during the growth of thick Al(Ga)N layers, which is a challenge in terms of strain management. We present how in-situ reflectometry and curvature measurement (EpiCurveTT(at)LayTec) in commercial multiwafer growth reactors helps to optimize the growth processes concerning growth rates, surface roughening and avoidance of layer cracking on 2inch substrates and enhance the reproducibility of epitaxial growth. The growth of up to 3 μm thick planar AlN templates and up-to 10 μm thick AlN/sapphire templates by epitaxial lateral overgrowth of stripe patterned templates for UV-C LED structures will be highlighted. The implementation of different types of AlN/GaN superlattices for the subsequent growth of up to 5μm thick Al0.5Ga0.5N layer for UVB LED structures will be shown. Correlations to ex-situ measurements like X-ray diffraction and TEM analysis of defects in the LED structures will be shown. Some challenges of in-situ control through very narrow viewports as in Close Coupled Showerhead reactors will be discussed as well as the influence of silicon doping on curvature and dislocation density in Al(Ga)N layers.

Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas

OpenAIRE

Galiana Blanco, Beatriz

2011-01-01

El trabajo de estas tesis trata sobre el desarrollo en el IES-UPM de la tecnología de crecimiento epitaxial de fase vapor mediante precursores metalorgánicos (MOVPE) para el crecimiento de células solares de semiconductores III-V para concentraciones luminosas elevadas. En la primera parte de la memoria se presentan los principios de la MOVPE y el estudio de los materiales semiconductores utilizados a lo largo de la tesis: GaAs, AlGaAs, GaInP y AlInP. Para ello, se ha analizado cómo influ...

Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Ezzedini, Maher, E-mail: maher.ezz7@gmail.com [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia); Sfaxi, Larbi, E-mail: sfaxi.larbi@yahoo.fr [Sousse University, High School of Sciences and Technology of Hammam Sousse (Tunisia); M’Ghaieth, Ridha, E-mail: ridha.mghaieth@fsm.rnu.tn [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia)

2017-01-15

Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp{sub 2}Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp{sub 2}Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp{sub 2}Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.

Towards nanorod LEDs: Numerical predictions and controlled growth

Energy Technology Data Exchange (ETDEWEB)

Koelper, Christopher [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Computational Electronics and Photonics, Universitaet Kassel, Wilhelmshoeher Allee 71, 34121 Kassel (Germany); Bergbauer, Werner [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Drechsel, Philipp; Sabathil, Matthias; Strassburg, Martin; Lugauer, Hans-Juergen [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Witzigmann, Bernd [Computational Electronics and Photonics, Universitaet Kassel, Wilhelmshoeher Allee 71, 34121 Kassel (Germany); Fuendling, Soenke; Li, Shunfeng; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)

2011-07-15

We present a numerical optimization of nanorod geometries with respect to the optical properties of an electrically driven LED emitting in the green spectral range. It is shown that an overall Purcell enhancement as well as directional emission can be achieved at an emission wavelength of 550 nm with nanorods of 110 nm radius. Position-controlled growth on patterned substrates demonstrates that the required dimensions are accessible by varying growth parameters and growth time in a large volume MOVPE reactor. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Science.gov (United States)

Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

2018-02-01

It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Wang, Xue; Erenburg, Milena; Al-Suleiman, Mohamed Aid Mansur; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Bergbauer, Werner [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Strassburg, Martin [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

2011-07-15

Selective area growth of GaN nanorods by metalorganic vapor phase epitaxy is highly demanding for novel applications in nano-optoelectronic and nanophotonics. Recently, we report the successful selective area growth of GaN nanorods in a continuous-flow mode. In this work, as examples, we show the morphology dependence of GaN rods with {mu}m or sub-{mu}m in diameters on growth conditions. Firstly, we found that the nitridation time is critical for the growth, with an optimum from 90 to 180 seconds. This leads to more homogeneous N-polar GaN rods growth. A higher temperature during GaN rod growth tends to increase the aspect ratio of the GaN rods. This is due to the enhanced surface diffusion of growth species. The V/III ratio is also an important parameter for the GaN rod growth. Its increase causes reduction of the aspect ratio of GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface than it on {l_brace}1-100{r_brace} m-planes by supplying more NH{sub 3} (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation mechanism of Al-depleted bands in MOVPE-AlGaN layer on GaN template with trenches

Energy Technology Data Exchange (ETDEWEB)

Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Ezaki, Tetsuya; Kurogi, Takuya [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan)

2010-07-15

A microstructure in an AlGaN/GaN layer was analyzed in detail by means of transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with special attention to the formation of steps on the surface. The AlGaN layer was grown by MOVPE on a GaN template with periodic trenches. It was revealed that there formed were Al-depleted bands in the AlGaN layer. These bands were generated from rather lower regions in the AlGaN layer or those above the trenches, and run upwards. Some of them reached the top surface to connect a macro step. The formation mechanism of the Al-depleted region is discussed in terms of thermodynamics. If the total bonding energy of atoms on the macro step of surface is assumed to be smaller than that of atoms on a flat surface, the Al-depletion can be explained provided that the local equilibrium in concentration is conserved during the growth of AlGaN layer. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

DEFF Research Database (Denmark)

Kulkova, Irina; Kadkhodazadeh, Shima; Kuznetsova, Nadezda

2014-01-01

In this paper, we demonstrate the applicability of MOVPE butt-joint regrowth for integration of all-active InP/AlGaAs/InGaAsP optical components and the realization of high-functionality compact photonic devices. Planar high-quality integration of semiconductor optical amplifiers of various epi...

Innovation in crystal growth: A personal perspective

Science.gov (United States)

Mullin, J. B.

2008-04-01

The evolution of crystal growth has been crucially dependent on revolutionary innovations and initiatives involving ideas, technology and communication. A personal perspective is presented on some of these aspects in connection with the early history of semiconductors that have helped evolve our knowledge and advance the science and technology of crystal growth. The presentation considers examples from work on germanium, silicon, indium antimonide, gallium arsenide, indium phosphide, gallium phosphide and mercury cadmium telluride. In connection with metal organic vapour phase epitaxy (MOVPE), the influence of adduct purification for alkyls is noted together with the growth of Hg xCd 1-xTe. The role of crystal growth organisations together with initiatives in the publication of the Journal of Crystal Growth (JCG) and the pivotal role of the International Organisation of Crystal Growth (IOCG) are also highlighted in the quest for scientific excellence.

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

Czech Academy of Sciences Publication Activity Database

Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Krčil, Pavel; Hulicius, Eduard; Komninou, Ph.; Kioseoglou, J.

2015-01-01

Roč. 414, Mar (2015), 167-171 ISSN 0022-0248 R&D Projects: GA ČR GA13-15286S; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : long emission wavelength * photocurrent * InAs quantum dots * MOVPE * GaAsSb layer Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.462, year: 2015

First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth

International Nuclear Information System (INIS)

Yin Zongyou; Tang Xiaohong; Deny, Sentosa; Chin, Mee Koy; Zhang Jixuan; Teng Jinghua; Du Anyan

2008-01-01

First-step nucleation growth has an important impact on the two-step growth of high-quality mid-infrared emissive InAs/InGaAs/InP quantum dots (QDs). It has been found that an optimized growth rate for first-step nucleation is critical for forming QDs with narrow size distribution, high dot density and high crystal quality. High growth temperature has an advantage in removing defects in the QDs formed, but the dot density will be reduced. Contrasting behavior in forming InAs QDs using metal-organic vapor phase epitaxy (MOVPE) by varying the input flux ratio of group-V versus group-III source (V/III ratio) in the first-step nucleation growth has been observed and investigated. High-density, 2.5 x 10 10 cm -2 , InAs QDs emitting at>2.15 μm have been formed with narrow size distribution, ∼1 nm standard deviation, by reducing the V/III ratio to zero in first-step nucleation growth

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Czech Academy of Sciences Publication Activity Database

Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

2017-01-01

Roč. 464, Apr (2017), s. 59-63 ISSN 0022-0248 R&D Projects: GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Phosphorous passivation of In{sub 0.53}Ga{sub 0.47}As using MOVPE and characterization of Au-Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3})-In{sub 0.53}Ga{sub 0.47}As MIS capacitor

Energy Technology Data Exchange (ETDEWEB)

Pal, S. [Centre for Advanced Technology, Indore 452013, MP (India)]. E-mail: suparna@cat.ernet.in; Shivaprasad, S.M. [National Physical Laboratory, New Delhi 110012 (India); Aparna, Y. [National Physical Laboratory, New Delhi 110012 (India); Chakraborty, B.R. [National Physical Laboratory, New Delhi 110012 (India)

2005-05-30

A study of phosphorous passivation of the interface states of undoped In{sub 0.53}Ga{sub 0.47}As has been carried out. Phosphorous surface passivation has been achieved by: (1) exchange reaction of the InGaAs surface under phosphine vapor or (2) direct growth of InGaP/GaP thin epitaxial layers in a metal organic vapour phase epitaxy (MOVPE) reactor. The passivated surfaces have been characterized using X-ray photoelectron spectroscopy and capacitance-voltage measurements of the MIS devices. The minimum interface state density of 2.90 x 10{sup 11} eV{sup -1} cm{sup -2} was obtained for Au/Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3})/GaP/In{sub 0.53}Ga{sub 0.47}As structure.

Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Chierchia, Rosa

2007-07-01

This thesis treats strain and dislocations in MOVPE GaN layers. The mosaic structure of metalorganic vapour phase epitaxy (MOVPE)-grown GaN layers was studied in dependence on the grain diameter utilizing high-resolution XRD. Different models for the defect structure were analyzed, the edge type TD densities were calculated under the assumption that the dislocations are not randomly distributed but localized at the grain boundaries. Moreover, in situ measurements have shown that the layers are under tension in the c-plane when a nucleation layer is used. The second part of this thesis treats a particular approach to reduce dislocations in MOVPE GaN layers, i.e. maskless pendeo epitaxial growth of MOVPE GAN layers. FE simulations assuming the strain to be completely induced during cooling of the structures after growth agree only partly with experimental data. The strain state of single layers and stripes of GaN grown on SiC was studied to exploit the evolution of the strain in the different phases of the PE growth. The biaxial compressive stress, due to the lattice mismatch between the GaN layer and the AlN nucleation layer is plastically relieved before overgrowth. Temperature dependent measurements show a linear reduction of the wing tilt with increasing temperature varying from sample to sample. Bent TDs have been observed in TEM images of maskless PE samples. Stress induced from the mismatch between the AlN buffer layer and the GaN also contributes to the remaining part of the wing tilt not relieved thermally. It has to be noted that the rest tilt value varies from sample to sample at the growth temperature. In fact some of the data indicate that the wing tilt decreases with increasing V/III ratio. In the last Chapter the application of X-ray techniques for the analysis of strain and composition in layers of inhomogeneous composition is explored. In the first part of the Chapter the strain state and the Al content of AlGaN buffer layers grown directly on (0001

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

Science.gov (United States)

Li, Shunfeng; Wang, Xue; Mohajerani, Matin Sadat; Fündling, Sönke; Erenburg, Milena; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas; Mandl, Martin; Bergbauer, Werner; Strassburg, Martin

2013-02-01

Selective area growth of GaN rods by metalorganic vapor phase epitaxy has attracted great interest due to its novel applications in optoelectronic and photonics. In this work, we will present the dependence of GaN rod morphology on various growth parameters i.e. growth temperature, H2/N2 carrier gas concentration, V/III ratio, total carrier gas flow and reactor pressure. It is found that higher growth temperature helps to increase the aspect ratio of the rods, but reduces the height homogeneity. Furthermore, H2/N2 carrier gas concentration is found to be a critical factor to obtain vertical rod growth. Pure nitrogen carrier gas leads to irregular growth of GaN structure, while an increase of hydrogen carrier gas results in vertical GaN rod growth. Higher hydrogen carrier gas concentration also reduces the diameter and enhances the aspect of the GaN rods. Besides, increase of V/III ratio causes reduction of the aspect ratio of N-polar GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface when supplying more ammonia. In addition, an increase of the total carrier gas flow leads to a decrease in the diameter and the average volume of GaN rods. These phenomena are tentatively explained by the change of partial pressure of the source materials and boundary layer thickness in the reactor. Finally, it is shown that the average volume of the N-polar GaN rods keeps a similar value for a reactor pressure PR of 66 and 125 mbar, while an incomplete filling of the pattern opening is observed with PR of 250 mbar. Room temperature photoluminescence spectrum of the rods is also briefly discussed.

Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

Science.gov (United States)

Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

2017-11-01

Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

2007-08-01

The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

High-performance 1.3-μm laser diode by LP-MOVPE

Science.gov (United States)

Li, TongNing; Ji, Jin-yan; Yan, Xin-min; Liu, Tao; Ning, Zhou; Liu, Jiang; Liu, Zi-li; Huang, Ge-fan

1996-09-01

The progress in 1.3 micrometers wavelength InGaAsP/InP lasers for optic fiber communication and subscriber loop applications is reviewed. By using LP-MOVPE/LPE epitaxy techniques, the performance of commercial optical devices is considerably improved. The bandwidth of the 1.3 micrometers uncooled MQW-LD module could be high to 1.6GHz, threshold current Ith = 20mW while uniformity, reproducible, high yield are achieved. Further by growing active layer with compressive strained structure the lowest threshold current Ith equals 3.8mA was achieved with high reflection coating and the temperature performance of the SL-MQW-LD has been greatly improved, the change of slop efficiency at 25 degrees C and 85 degrees C is less than 1 dB. Using the holographic technique a high power 1.31 micrometers InGaAsP/InP multiquantum well distributed feedback laser has also been developed. The fiber output power of butterfly packaged module with optic isolator Pf > 10mW, threshold current Ith 22 percent and side mode suppression ratio SMSR > 40dB. The composite triple beat CTB test frequencies equals 55.25 to approximately 289.25MHz with 40 NCTA channels, the carrier to noise ration CNR > 50 dB and the relative intensity noise RIN < -160dB/Hz.

Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

Science.gov (United States)

Shintri, Shashidhar S.

Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

International Nuclear Information System (INIS)

Miya, S.S.; Wagener, V.; Botha, J.R.

2012-01-01

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga 1−x In x Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga 1−x In x Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga 1−x In x Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

Growth optimization for thick crack-free GaN layers on sapphire with HVPE

Energy Technology Data Exchange (ETDEWEB)

Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

2005-05-01

Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Composition–dependent growth dynamics of selectively grown InGaAs nanowires

International Nuclear Information System (INIS)

Kohashi, Y; Hara, S; Motohisa, J

2014-01-01

We grew gallium-rich (x > 0.50) and indium-rich (x < 0.50) In 1 − x Ga x As nanowires by catalyst–free selective-area metal–organic vapor-phase epitaxy (SA-MOVPE), and compared their growth dynamics dependence on V/III ratio. It was found that the growth dynamics of In 1 − x Ga x As nanowires is clearly dependent on the alloy composition x. Specifically, for gallium–rich nanowire growth, the axial growth rate of nanowires initially increased with decreasing V/III ratio, and then started to decrease when the V/III ratio continued to decrease below a critical value. On the other hand, axial growth rate of indium-rich nanowires monotonically decreased with decreasing V/III ratio. In addition, the alloy composition was strongly dependent on the V/III ratio for gallium-rich nanowire growth, while it was relatively independent of the V/III ratio for indium-rich nanowire growth. We discuss the origin of dissimilarity in the growth dynamics dependence on V/III ratio between gallium-rich and indium-rich InGaAs nanowire growth, and conclude that it is due to the inherent dissimilarity between GaAs and InAs. Our finding provides important guidelines for achieving precise control of the diameter, height, and alloy composition of nanowires suitable for future nanowire-based electronics. (papers)

The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases

Science.gov (United States)

Wang, Xue; Jahn, Uwe; Ledig, Johannes; Wehmann, Hergo-H.; Mandl, Martin; Straßburg, Martin; Waag, Andreas

2013-12-01

Columnar structures of III-V semiconductors recently attract considerable attention because of their potential applications in novel optoelectronic and electronic devices. In the present study, the mechanisms for the growth of catalyst-free self-organized GaN columns on sapphire substrate by metal organic vapor phase epitaxy have been thoroughly investigated. The growth behaviours are strongly affected by the choice of carrier gas. If pure nitrogen is used, Ga droplets are able to accumulate on the top of columns during growth, and they are converted into a high quality GaN layer during the cool down phase due to nitridation. Hydrogen as the carrier gas can improve the optical quality of the overall GaN columns substantially, and in addition increase the vertical growth rate. In this case, no indication of Ga droplets could be detected. Furthermore, silane doping during the growth promotes the vertical growth in both cases either pure nitrogen or pure hydrogen as the carrier gas.

Optimization of growth parameters for MOVPE-grown GaSb and Ga{sub 1-x}In{sub x}Sb

Energy Technology Data Exchange (ETDEWEB)

Miya, S.S.; Wagener, V. [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa); Botha, J.R., E-mail: reinhardt.botha@nmmu.ac.za [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa)

2012-05-15

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 Degree-Sign C at atmospheric pressure. Trimethylindium was added in the case of Ga{sub 1-x}In{sub x}Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga{sub 1-x}In{sub x}Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga{sub 1-x}In{sub x}Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

Silicon—a new substrate for GaN growth

Indian Academy of Sciences (India)

Unknown

of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the .... Considerable research is being carried out on GaN HEMTs at present. ... by InGaN/GaN multiquantum well in MOVPE was first.

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Science.gov (United States)

Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

2018-04-01

We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent high-resolution mass spectroscopy results.

Wavelength tunable InAs/InP(1 0 0) quantum dots in 1.55-µm telecom devices

NARCIS (Netherlands)

Anantathanasarn, S.; Barbarin, Y.; Cade, N.I.; Veldhoven, van P.J.; Bente, E.A.J.M.; Oei, Y.S.; Kamada, H.; Smit, M.K.; Nötzel, R.

2007-01-01

This paper reviews the growth, characterization and device applications of self-assembled InAs/InP(1 0 0) quantum dots (QDs) formed by MOVPE. The problematic As/P exchange reaction during QD growth is suppressed by the insertion of a GaAs interlayer together with optimum growth conditions. This

Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs

Energy Technology Data Exchange (ETDEWEB)

Fuendling, Soenke; Li, Shunfeng; Soekmen, Uensal; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2009-06-15

Three-dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN-based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silicon substrates with deep etched nanopillars to control the GaN nanorods growth by varying the size and distance of the Si pillars. The small footprint of GaN nanorods grown on Si pillars minimise the influence of the lattice mismatched substrate and improve the material quality. For the Si pillars an inductively coupled plasma dry-etching process at cryogenic temperature has been developed. An InGaN/GaN multi quantum well (MQW) structure has been incorporated into the GaN nanorods. We found GaN nanostructures grown on top of the silicon pillars with a pyramidal shape. This shape results from a competitive growth on different facets as well as from surface diffusion of the growth species. Spatially resolved optical properties of the structures are analysed by cathodoluminescence. Strongly spatial-dependent MQW emission spectra indicate the growth rate differences on top of the rods. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of strain on the growth of thick InGaN layers

International Nuclear Information System (INIS)

Stellmach, J.; Leyer, M.; Pristovsek, M.; Kneissl, M.

2008-01-01

The growth of high quality InGaN alloys is critical for a number of various optoelectronic device applications like LEDs and laser diodes. Nevertheless, the exact growth mechanisms of InGaN with high indium content is still not fully understood. In the present study the growth of thick InGaN layers was systematically investigated. InGaN films with thicknesses between ∝35 nm and ∝200 nm were grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). The group III partial pressures of 1.1 Pa for TMGa, 0.45 Pa for TMIn and the V/III-ratio of 1600 were kept constant. The growth temperature was varied between 750 C and 800 C. The growth of InGaN layer was characterized by in-situ spectroscopic ellipsometry (SE). Up to temperatures of 790 C structural analysis by XRD showed two strained layers with different indium content. The formation of the layer structure was investigated by varying the growth times at 770 C. In the first 500 s (35 nm) a rough (rms=9 nm) and pseudomorphically strained InGaN layer with low indium content (4%) is formed. Between 500 s and 1000 s this strained layer becomes smoother (rms=3.4 nm). For thicknesses beyond the In content increases (8% at 84 nm) and reaches 11% at 200 nm. We propose that the transition from a first layer with a low indium content to a second layer with an higher indium content is due to a gradual release of strain

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Pangrác, Jiří; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Komninou, Ph.; Hulicius, Eduard

2015-01-01

Roč. 414, Mar (2015), s. 156-160 ISSN 0022-0248 R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : MOVPE * InAs/GaAs MQD * GaAsSb SRL * RAS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.462, year: 2015

Oxygen and minority carrier lifetimes in N-and P-type AL0.2GA0.8AS grown by metal organics vapor phase epitaxy

International Nuclear Information System (INIS)

Zahraman, Khaled; Leroux, M.; Gibart, P.; Zaidi, M.A.; Bremond, G.; Guillot, G.

2000-01-01

author.The minority carrier lifetimes in Al x Ga 1-x As grown by Metal-Organics Vapor Phase Epitaxy (MOVPE) is generally lower than in GaAs. This is believed to be due to oxygen incorporation in the layers. We describe a study of radiative and non radiative minority carriers lifetimes in n-and p-type Al 0.2 Ga 0.8 As as a function of growth parameters, in correlation with oxygen concentration measurements and deep level transient spectroscopy (DLTS) studies. Long non radiative lifetimes and low oxygen contents are achieved using temperature growth. A main minority hole lifetime killer appears to be 0.4 eV deep O related electron trap detected by DLTS at concentrations three orders of magnitude lower than the atomic oxygen one. Record lifetimes in MOVPE grown n-and p-type Al 0.2 Ga 0.8 As are obtained. An Al 0.85 Ga 0.15 As/Al 0.2 Ga 0.8 As surface recombination velocity lower than 4.5x10 3 cm.s -1 is measured

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

2014-12-15

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

Directory of Open Access Journals (Sweden)

G. Naresh-Kumar

2014-12-01

Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y films using ion beam channeling

International Nuclear Information System (INIS)

Nebiki, Takuya; Narusawa, Tadashi; Kumagai, Akiko; Doi, Hideyuki; Saito, Tadashi; Takagishi, Shigenori

2006-01-01

We have investigated the nitrogen lattice location in MOVPE grown Ga 1-x In x N y As 1-y with x=0.07 and y=0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1-x In x N y As 1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N(α,p) 17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ∼0.2 A from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms. (author)

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

Science.gov (United States)

Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

Characterisation of 3D-GaN/InGaN nanostructured Light Emitting Diodes by Transmission Electron Microscopy

International Nuclear Information System (INIS)

Griffiths, I J; Cherns, D; Wang, X; Waag, A; Wehmann, H-H

2013-01-01

Transmission and scanning electron microscopy have been used to characterise GaN/InGaN 3D nanostructures grown on patterned GaN/sapphire substrates by MOVPE. It has been found that the growth of well ordered arrays of such nanostructures, containing multiple quantum wells on non-polar side-facets, can be achieved with a low density of defects. Growth changes and surface morphology play a major role in the nucleation of any defects present. The nanostructure morphology has been investigated and non-uniform growth on adjacent facets studied

Characterisation of 3D-GaN/InGaN nanostructured Light Emitting Diodes by Transmission Electron Microscopy

Science.gov (United States)

Griffiths, I. J.; Cherns, D.; Wang, X.; Waag, A.; Wehmann, H.-H.

2013-11-01

Transmission and scanning electron microscopy have been used to characterise GaN/InGaN 3D nanostructures grown on patterned GaN/sapphire substrates by MOVPE. It has been found that the growth of well ordered arrays of such nanostructures, containing multiple quantum wells on non-polar side-facets, can be achieved with a low density of defects. Growth changes and surface morphology play a major role in the nucleation of any defects present. The nanostructure morphology has been investigated and non-uniform growth on adjacent facets studied.

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

International Nuclear Information System (INIS)

Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

2006-01-01

High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

Science.gov (United States)

2017-02-01

times are 4 influenced by the gas handling system , reactor geometry, and growth process parameters. Gas systems and reactors have been engineered...temperature," Journal of Crystal Growth, vol. 175-176, pp. 22-28, 1997. [60] K. Pantzas, G. Beaudoin, G. Patriarche , L. Largeau, O. Mauguin, G

MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

Energy Technology Data Exchange (ETDEWEB)

Hoffmann, Veit

2011-04-18

The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Postfach 4120, 39016 Magdeburg (Germany)

2011-03-15

We present metal organic vapor phase epitaxy growth of semi-polar GaN structures on high index silicon surfaces. The crystallographic structure of GaN grown on Si(112), (115), and (117) substrates is investigated by X-ray analysis and scanning electron microscopy. X-ray diffraction was performed in Bragg Brentano geometry as well as pole figure measurements. The results demonstrate that the orientation of GaN crystallites on Si is significantly dependent on thickness of the AlN seeding layer and TMAl-flow rate. We observe that the crystallographic structures of GaN by applying thin AlN seeding layers grown with high TMAl-flow rate depend on Si surface direction while they are independent for thicker layers. By applying such seeding layer we obtain single crystalline semi-polar GaN on Si(112), while GaN structures grown with the same growth parameters on Si(117) show four components of GaN(0002). (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth and characterization of GaInP unicompositional disorder-order-disorder quantum wells

International Nuclear Information System (INIS)

Schneider, R.P. Jr.; Jones, E.D.; Follstaedt, D.M.

1994-01-01

Metalorganic vapor phase epitaxy (MOVPE) is used to grow unicompositional quantum-well (QW) structures, in which the QW and barrier layers are composed of ordered and disordered GaInP, respectively. Transmission electron dark-field micrographs reveal abrupt interfaces between highly ordered QWs and disordered barriers, with no evidence of defect formation. Low-temperature photoluminescence from the structures exhibits relatively broad emission peaks, with emission energy increasing with decreasing QW thickness. The dependence of emission energy on well thickness can be described by a finite square well model only when a type-II band alignment is taken for the heterostructure, in which the conduction band edge of the ordered GaInP QW lies about 135--150 meV below that of the disordered barrier material. These results demonstrate a high degree of control over the ordering process in MOVPE, such that quantum size effects can be realized solely through disorder-order phenomena. Further, the data provide strong support for a type-II (spatially indirect) recombination transition between ordered and disordered GaInP

Surface Plasmons on Highly Doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

2016-01-01

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics

OpenAIRE

Kusaba, Akira; Li, Guanchen; von Spakovsky, Michael R.; Kangawa, Yoshihiro; Kakimoto, Koichi

2017-01-01

Clearly understanding elementary growth processes that depend on surface reconstruction is essential to controlling vapor-phase epitaxy more precisely. In this study, ammonia chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy (MOVPE) conditions (3Ga-H and Nad-H + Ga-H on a 2 × 2 unit cell) is investigated using steepest-entropy-ascent quantum thermodynamics (SEAQT). SEAQT is a thermodynamic-ensemble based, first-principles framework that can predict...

X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges

Energy Technology Data Exchange (ETDEWEB)

O' Malley, S.M.; Bonanno, P.L.; Sirenko, A.A. [Department of Physics, New Jersey Institute of Technology, Newark, NJ (United States); Wunderer, T.; Brueckner, P.; Neubert, B.; Scholz, F. [Institute of Optoelectronics, Ulm University, Ulm (Germany); Kazimirov, A. [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY (United States)

2008-07-01

The structural properties of InGaN/GaN multiple quantum wells (MQW) were studied using synchrotron based high resolution X-ray diffraction (HRXRD). MQW structures were grown on the top and sidewall facets of triangular and trapezoidal shaped GaN ridges by metalorganic vapour phase epitaxy (MOVPE) in the regime of selective area growth (SAG). Period and strain variations as a function of oxide mask width were determined for both the sidewall and the top facet growth. Oxide mask widths ranged between 2 and 20 {mu}m with openings between adjacent masks of 4 and 6 {mu}m. Analysis of the X-ray diffraction curves revealed a sidewall/vertical growth rate ratio of {proportional_to}0.3 through a comparison of the top to sidewall facet MQW periods. Masks orientated along the left angle 11-20 right angle crystallographic direction showed stronger growth enhancement along with large global strain for MQW growth on the top (0001) plane. Interpreting our results within the framework of vapour phase diffusion revealed that inter-facet migration of group-III species needs to be taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterisation of 3D-GaN/InGaN core-shell nanostructures by transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Griffiths, Ian; Cherns, David [School of Physics, H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL (United Kingdom); Wang, Xue; Wehman, Hergo-Heinrich; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Mandl, Martin; Strassburg, Martin [Osram Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg (Germany)

2014-04-15

Transmission and scanning electron microscopy have been used to characterise GaN/InGaN 3D nanostructures grown on patterned GaN/sapphire substrates by metal organic vapour phase epitaxy (MOVPE). It has been found that the growth of well ordered arrays of such nanostructures, containing multiple quantum wells on non-polar side-facets, can be achieved with a low density of defects. Growth changes and surface morphology play a major role in the nucleation of any defects present. The nanostructure morphology has been investigated and differing growth rates on adjacent facets studied. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of (20 anti 21)AlGaN, GaN and InGaN by metal organic vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ploch, S.; Wernicke, T.; Rass, J.; Pristovsek, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [TU Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2012-07-01

Green InGaN-based laser diodes on (20 anti 21)GaN substrates have recently demonstrated performances exceeding those of conventional (0001) oriented devices. However little is known regarding the growth parameters. We have investigated growth of AlGaN, GaN and InGaN on (20 anti 21)GaN substrates by MOVPE. Smooth GaN layers with a rms roughness <0.5 nm were obtained by low growth temperatures and reactor pressures. The layers exhibit undulations along [10 anti 14] similar to the GaN substrate. AlGaN and InGaN layers exhibit an increased surface roughness. Undulation bunching was observed and attributed to reduced adatom surface mobility due to the binding energy of Al and the low growth temperature for InGaN respectively or strain relaxation. AlGaN and InGaN heterostructures on (20 anti 21)GaN relax by layer tilt accompanied by formation of misfit dislocations, due to shear strain of the unit cell. This relaxation mechanism leads to a reduced critical layer thickness of (20 anti 21)AlGaN layers and InGaN multi quantum wells (MQW) in comparison to (0001). PL spectral broadening of 230 meV of (20 anti 21)InGaN single QWs emitting at 415 nm can be reduced by increased growth temperature or increased number of QWs with reduced thickness.

Intrinsic quantum dots in InAs nanowires

International Nuclear Information System (INIS)

Weis, Karl Martin Darius

2013-01-01

This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2010-07-15

GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

International Nuclear Information System (INIS)

Pantzas, K.; Abid, M.; Voss, P.L.; Ougazzaden, A.; Patriarche, G.; Orsal, G.; Gautier, S.; Moudakir, T.; Gorge, V.; Djebbour, Z.

2012-01-01

In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise to accommodate the increasing strain energy of the InGaN layer. Three distinct stages of growth have been identified. First, a homogeneous, 2D InGaN layer forms, pseudomorphically strained on the underlying GaN. Then, at around 30 nm large lateral fluctuations of the indium composition are observed and a second pseudomorphic layer, composed of indium-rich and indium-poor clusters, is formed. Finally induces a 2D/3D transition at 60 nm and a 3D InGaN layer is formed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

KAUST Repository

Ohkawa, Kazuhiro

2017-10-24

GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.

Defect structure in m-plane GaN grown on LiAlO{sub 2} using metalorganic and hydride vapour phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Richter, Eberhard; Knauer, Arne; Brunner, Frank; Weyers, Markus [FBH Berlin (Germany); Mogliatenko, Anna; Neumann, Wolfgang [AG Kristallographie, Institut fuer Physik, HU Berlin (Germany); Kneissl, Michael [FBH Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2008-07-01

The FWHM of symmetric (10 anti 10) XRD rocking curves of m-plane GaN grown on LiAlO{sub 2} is anisotropic. By investigating the microstructure with transmission electron microscopy (TEM) we identified basal plane stacking faults (BSF) and stacking mismatch boundaries (SMB) in the GaN layers. BSFs are aligned in-plane along the a-direction and therefore cause an anisotropic broadening of the FWHM{sub (10 anti 10)} with incidence along [0001]. SMBs have no preferential direction and hence result in an isotropic broadening of the FWHM{sub (10 anti 10)}. We observed that this anisotropy can be reduced by lowering the MOVPE growth temperature. We propose that the lowering of the growth temperature leads to a reduction of BSFs which is accompanied by an increase in SMBs. The MOVPE grown layers were used as templates for the growth of 200 {mu}m thick m-plane GaN layers by HVPE. During HVPE growth the LiAlO{sub 2} substrate thermally decomposed and peeled off after cool-down. On the surface a network of cracks not being aligned to crystallographic directions was found. The layers were not transparent probably due to metallic Ga inclusions and exhibited an asymmetric bow according to the lattice anisotropy of the (100) LiAlO{sub 2} surface.

Sensitivity of Heterointerfaces on Emission Wavelength in Quantum Cascade Lasers

Science.gov (United States)

2016-10-31

thickness. To correct the composition, a secondary flow of the Al precursor was added during MOVPE growth to increase Al content in QCLs. The resulting...diluted 200 ppm in H2) was used as the n-type dopant. The growth temperature was 625 °C as measured by emissivity corrected optical pyrometrey. AlInAs and...Muraki, S. Fukatsu, Y. Shiraki, and R. Ito , "Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in

Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications

Science.gov (United States)

2017-03-20

Ge Si Sn M ob ilit y (c m 2 /V *s ) Measured Nd - Na (cm -3) MBE Figure 4. Mobility as a...100 LPCVD MOVPE MOVPE Sn Si Ge C on ta ct R es is ta nc e ( m m ) Measured Nd - Na(cm -3) MBE MOVPE Figure 5. Contact Resistance (Ω*mm) is... Deposition (LPCVD). Epitaxy was grown on compensation doped (Mg or Fe) single crystal substrate with (010) or (100) crystal orientations.

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics.

Science.gov (United States)

Kusaba, Akira; Li, Guanchen; von Spakovsky, Michael R; Kangawa, Yoshihiro; Kakimoto, Koichi

2017-08-15

Clearly understanding elementary growth processes that depend on surface reconstruction is essential to controlling vapor-phase epitaxy more precisely. In this study, ammonia chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy (MOVPE) conditions (3Ga-H and N ad -H + Ga-H on a 2 × 2 unit cell) is investigated using steepest-entropy-ascent quantum thermodynamics (SEAQT). SEAQT is a thermodynamic-ensemble based, first-principles framework that can predict the behavior of non-equilibrium processes, even those far from equilibrium where the state evolution is a combination of reversible and irreversible dynamics. SEAQT is an ideal choice to handle this problem on a first-principles basis since the chemical adsorption process starts from a highly non-equilibrium state. A result of the analysis shows that the probability of adsorption on 3Ga-H is significantly higher than that on N ad -H + Ga-H. Additionally, the growth temperature dependence of these adsorption probabilities and the temperature increase due to the heat of reaction is determined. The non-equilibrium thermodynamic modeling applied can lead to better control of the MOVPE process through the selection of preferable reconstructed surfaces. The modeling also demonstrates the efficacy of DFT-SEAQT coupling for determining detailed non-equilibrium process characteristics with a much smaller computational burden than would be entailed with mechanics-based, microscopic-mesoscopic approaches.

Self-Catalyzed Growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors

Science.gov (United States)

2015-06-01

MOVPE Metal organic vapor phase epitaxy NCA Nano Channel Aluminum NW Nanowire PL Photoluminescence PMMA Poly methyl methacrylate...GaAs (111) B substrate. The NWs were grown using a nanochannel alumina ( NCA ) template. It was later shown by Dubrovskii et al. [16], that the NWs... cathode gun. The type of signals produced are secondary electron (SE), back scattered electron (BSE), characteristic X- rays, specimen current and

Vapor-phase etching of InP using anhydrous HCl and PH/sub 3/ gas

International Nuclear Information System (INIS)

Pak, K.; Koide, Y.; Imai, K.; Yoshida, A.; Nakamura, T.; Yasuda, Y.; Nishinaga, T.

1986-01-01

In situ etching of the substrate surface for vapor-phase epitaxy is a useful technique for obtaining a smooth and damage-free surface prior to the growth. Previous work showed that the incorporation of in situ etching of InP substrate with anhydrous HCl gas resulted in a significant improvement in the surface morphologies for MOVPE-grown InGaAs/InP and InP epitaxial layers. However, the experiment on the HCl etching of the InP substrate for a wide temperature range has not been performed as yet. In this note, the authors describe the effect of the substrate temperature on the etching morphology of InP substrate by using the anhydrous HCl and PH/sub 3/ gases. In the experiment, they used a standard MOVPE horizontal system. A quartz reactor tube in a 60 mm ID, 60 cm long, was employed

Defect chemistry in CuGaS2 thin films: A photoluminescence study

International Nuclear Information System (INIS)

Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

2007-01-01

In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

2012-01-01

Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

DEFF Research Database (Denmark)

Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

2008-01-01

deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

Energy Technology Data Exchange (ETDEWEB)

Schilling, M.; Bouayad-Amine, J.; Feeser, T.; Haisch, H.; Kuehn, E.; Lach, E.; Satzke, K.; Weber, J.; Zielinski, E. [Alcatel Telecom, Stuttgart (Germany). Research Div.

1996-12-31

The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO{sub 2} patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths < 13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 {micro}m wavelength.

[Saarland Growth Study: sampling design].

Science.gov (United States)

Danker-Hopfe, H; Zabransky, S

2000-01-01

The use of reference data to evaluate the physical development of children and adolescents is part of the daily routine in the paediatric ambulance. The construction of such reference data is based on the collection of extensive reference data. There are different kinds of reference data: cross sectional references, which are based on data collected from a big representative cross-sectional sample of the population, longitudinal references, which are based on follow-up surveys of usually smaller samples of individuals from birth to maturity, and mixed longitudinal references, which are a combination of longitudinal and cross-sectional reference data. The advantages and disadvantages of the different methods of data collection and the resulting reference data are discussed. The Saarland Growth Study was conducted for several reasons: growth processes are subject to secular changes, there are no specific reference data for children and adolescents from this part of the country and the growth charts in use in the paediatric praxis are possibly not appropriate any more. Therefore, the Saarland Growth Study served two purposes a) to create actual regional reference data and b) to create a database for future studies on secular trends in growth processes of children and adolescents from Saarland. The present contribution focusses on general remarks on the sampling design of (cross-sectional) growth surveys and its inferences for the design of the present study.

Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

Energy Technology Data Exchange (ETDEWEB)

Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)

2011-05-15

Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 {mu}m

Energy Technology Data Exchange (ETDEWEB)

Sharma, T.K.; Zorn, M.; Zeimer, U.; Kissel, H.; Bugge, F.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2005-09-01

Highly strained In{sub x}Ga{sub 1-x}As quantum wells (QWs) with GaAs barriers emitting around 1.2 {mu}m are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510 C is found to be opposite to the results reported for 700 C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 {mu}m which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

International Nuclear Information System (INIS)

López-Escalante, M.C.; Gabás, M.; García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C.; Palanco, S.; Ramos-Barrado, J.R.

2016-01-01

Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Energy Technology Data Exchange (ETDEWEB)

López-Escalante, M.C., E-mail: mclopez@uma.es [Nanotech Unit, Laboratorio de Materiales y Superficies, Departamento de Ingeniería Química, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Gabás, M. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain); García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C. [Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid Spain (Spain); Palanco, S.; Ramos-Barrado, J.R. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain)

2016-01-01

Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar{sup +} sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

High Efficacy Green LEDs by Polarization Controlled MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wetzel, Christian [Rensselaer Polytechnic Inst., Troy, NY (United States)

2013-03-31

Amazing performance in GaInN/GaN based LEDs has become possible by advanced epitaxial growth on a wide variety of substrates over the last decade. An immediate push towards product development and worldwide competition for market share have effectively reduced production cost and generated substantial primary energy savings on a worldwide scale. At all times of the development, this economic pressure forced very fundamental decisions that would shape huge industrial investment. One of those major aspects is the choice of epitaxial growth substrate. The natural questions are to what extend a decision for a certain substrate will limit the ultimate performance and to what extent, the choice of a currently more expensive substrate such as native GaN could overcome any of the remaining performance limitations. Therefore, this project has set out to explore what performance characteristic could be achieved under the utilization of bulk GaN substrate. Our work was guided by the hypotheses that line defects such as threading dislocations in the active region should be avoided and the huge piezoelectric polarization needs to be attenuated – if not turned off – for higher performing LEDs, particularly in the longer wavelength green and deep green portions of the visible spectrum. At their relatively lower performance level, deep green LEDs are a stronger indicator of relative performance improvements and seem particular sensitive to the challenges at hand.

MOVPE and characterization of GaN-based structures on alternative substrates

Energy Technology Data Exchange (ETDEWEB)

Dikme, Y.

2006-06-20

This study involves growth experiments of GaN-based layer structures on silicon (Si), lithium aluminate (LiAlO{sub 2}) and the composite substrate SiCOI. Substrate specific preparation and growth procedures were developed. Because of the different lattice constants and thermal expansion coefficients between GaN and the substrate materials and because of the high depositions temperatures (>1000 C) complex interlayers are required to create a crossover from the substrate to the GaN layer and to prevent substrate/layer bowing and cracks developing in the epitaxial layers. Crystallographic, thermal and electronic properties of these materials were investigated and the developed layers were used as buffer layers for electronic and opto electronic devices. On Si AlN/GaN distributed Bragg reflectors (DBR), InGaN/GaN multiple quantum well (MQW) and AlGaN/GaN HEMT (high electron mobility transistor) were demonstrated. The transistor structures showed high power densities, which were comparable to industrially fabricated devices. As well as the reflection of a certain wavelength region, the DBR layers additionally showed positive influence on succeeding GaN top layer optical properties. For the first time laser emission of an optically pumped InGaN/GaN MQW on Si was demonstrated with low excitation density and a high operating temperature. GaN-based structures were deposited on LiAlO2 in the m-plane crystal orientation; that do not exhibit polarization mechanisms in growth direction. For the deposition of coalesced GaN films a seal-coating of the LiAlO{sub 2} surface was developed and finally LED structures were grown on these substrates. For the first time electroluminescence of LED structures on LiAlO{sub 2} was achieved. The growth on the composite substrate SiCOI was initiated with an HT AlN layer and it was demonstrated that SiCOI is comparable to a bulk SiC substrate for the GaN-based epitaxy. The developed and investigated layer structure served as buffer for the

Ex-situ activation of magnesium acceptors in InGaN/LED-structures

Energy Technology Data Exchange (ETDEWEB)

Kusch, Gunnar; Frentrup, Martin; Stellmach, Joachim; Kolbe, Tim; Wernicke, Tim; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany)

2011-07-01

One of the main problems limiting the output power of group-III-nitride compound light emitting diodes (LEDs) and laser diodes (LD) is the p-doping of nitrides with magnesium (Mg). During metal-organic vapor phase epitaxy (MOVPE) growth of (Al)GaN:Mg magnesium acceptors are passivated by hydrogen (H). By thermal annealing under nitrogen atmosphere the Mg-H bond can be cracked, thus activating the Mg acceptor. We have investigated ex-situ Mg-activation of the p-GaN layer and p-AlGaN electron blocking layer (EBL) in LEDs grown by MOVPE. Especially the activation of the AlGaN EBL is crucial. Simulations show, that a high doping level is required for effective electron blocking and a high injection efficiency. Additionally the acceptor activation energy is expected to increase with increasing Al-content, reducing the free hole concentration in the EBL. Electroluminescence spectroscopy (EL) was performed to determine the influence of the activation on the external quantum efficiency of the LED structure. Furthermore we used CV measurements to determine the Mg-acceptor concentration.

Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces

International Nuclear Information System (INIS)

Krueger, David

2009-01-01

Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces; Rastertunnelmikroskopie und -spektroskopie an GaN- und InGaN-Oberflaechen

Energy Technology Data Exchange (ETDEWEB)

Krueger, David

2009-12-02

Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

Economic growth constraints in Vietnam: A study using the growth diagnostic approach

Directory of Open Access Journals (Sweden)

Nguyen Duc Thanh

2016-04-01

Full Text Available Recent studies have clearly pointed out a decreasing trend of Vietnam’s economic growth in the short and the medium terms. This paper presents a study applying the growth diagnostic method for Vietnam to determine growth constrains. The binding growth constrains of Vietnam are found to include a poor business environment; an underdeveloped infrastructure, especially the transportation network market; failures related to information externalities, learning externalities and coordination failures. Notably, the energy infrastructure could be a vital constraint in a near future, but is not a binding constraint at present. The inefficiency of financial intermediaries and the government’s over-investment could become a binding constraint when the economy returns to its high growth path.

Synthesis and properties of ultra-long InP nanowires on glass.

Science.gov (United States)

Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

2016-12-16

We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

The importance to reveal buried interfaces in the semiconductor heterostructure devices

International Nuclear Information System (INIS)

Takeda, Yoshikazu; Tabuchi, Masao

2007-01-01

Even though several in-situ monitoring techniques exist and are quite useful to understand the growth processes in MBE or MOVPE, we also need a technique to reveal the buried interfaces along which carriers are transported and recombine to emit light. The interface is modified during the capping (overgrowth) and also during the device fabrication processes after growth. We need to correlate the interface structures in the devices and the device performances. The only technique we have at present is the X-ray CTR scattering measurements. We discuss the limits of the in-situ monitoring and the necessity to reveal the buried interfaces non-destructively, either in-situ or ex-situ

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

2008-05-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Increasing the quantum efficiency of GaAs solar cells by embedding InAs quantum dots

Science.gov (United States)

Salii, R. A.; Mintairov, S. A.; Nadtochiy, A. M.; Payusov, A. S.; Brunkov, P. N.; Shvarts, M. Z.; Kalyuzhnyy, N. A.

2016-11-01

Development of Metalorganic Vapor Phase Epitaxy (MOVPE) technology of InAs quantum dots (QDs) in GaAs for photovoltaic applications is presented. The growth peculiarities in InAs-GaAs lattice-mismatched system were considered. The photoluminescence (PL) intensity dependences on different growth parameters were obtained. The multimodal distribution of QDs by sizes was found using AFM and PL methods. GaAs solar cell nanoheterostructures with imbedded QD arrays were designed and obtained. Ones have been demonstrated a significant increase of quantum efficiency and photogenerated current of QD solar cells due to photo effect in InAs QD array (0.59 mA/cm2 for AM1.5D and 82 mA/cm2 for AM0).

Benchmarking surface signals when growing GaP on Si in CVD ambients

Energy Technology Data Exchange (ETDEWEB)

Doescher, Henning

2010-10-26

The present work investigates the formation of GaP films prepared on Si(100) surfaces and their anti-phase disorder in metalorganic vapor phase epitaxy (MOVPE) ambients. GaP films grown on Si(100) substrates served as a lattice matched model system for the crucial III-V/Si(100) interface to form silicon-based quasi substrates. A variety of surface-sensitive methods was required to establish suitable silicon substrate preparation and subsequent GaP growth free of anti-phase domains (APDs) by analyzing the substrate surface, the interface and the epitaxial films resulting from the heteroepitaxial nucleation process. Thorough investigations in the MOVPE ambients and an appropriate improvement of the equipment and of the VPE preparation process of the substrates led to clean Si(100) surfaces free of oxygen and other contaminants, as was evidenced by Xray photoelectron spectroscopy. Predominantly double-layer stepped Si(100) surfaces, as a prerequisite for subsequent III-V integration, were obtained for 0.1 , 2 and 6 misorientation in [011] direction. In contrast to standard preparation in ultra-high vacuum (UHV), the double-layer steps on 0.1 and 2 samples featured dimers oriented perpendicular to the step edges, contradicting well-established results with and without hydrogen coverage obtained in UHV. This striking difference was attributed to the presence of hydrogen as a process gas in the MOVPE environment leading to a silicon surface covered by monohydrides after substrate preparation, as was determined by Fourier-transform infrared spectroscopy (FTIR), while reflectance anisotropy spectroscopy (RAS) showed the absence of hydrogen termination at higher temperatures. On these substrates, optical in situ spectroscopy was established as a method for the quantitative evaluation of the APD content in GaP heteroepitaxy. The analysis required a detailed understanding of the GaP(100) surface reconstructions, which have been described theoretically in the literature and

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

Energy Technology Data Exchange (ETDEWEB)

Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-15

This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

International Nuclear Information System (INIS)

Wagener, Viera; Olivier, E.J.; Botha, J.R.

2009-01-01

This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

The initial growth of complex oxides : study and manipulation

NARCIS (Netherlands)

Rijnders, Augustinus J.H.M.

2001-01-01

In this thesis, the initial growth stage, i.e., nucleation and growth of the first few unit cell layers, of complex oxides was studied in real time during pulsed laser deposition (PLD). These studies were performed at their optimal epitaxial growth conditions, i.e., high temperature and high oxygen

Protocols to Study Growth and Metabolism in Drosophila.

Science.gov (United States)

Strassburger, Katrin; Teleman, Aurelio A

2016-01-01

Signaling pathways such as the insulin/insulin-like growth factor pathway concurrently regulate organismal growth and metabolism. Drosophila has become a popular model system for studying both organismal growth and metabolic regulation. Care must be taken, however, when assessing such phenotypes because they are quantitative in nature, and influenced by environment. This chapter first describes how to control animal age and nutrient availability, since growth and metabolism are sensitive to these parameters. It then provides protocols for measuring tissue growth, cell size, and metabolic parameters such as stored lipids and glycogen, and circulating sugars.

Growth failure, somatomedin and growth hormone levels in juvenile diabetes mellitus--a pilot study.

Science.gov (United States)

Nash, H

1979-06-01

Growth hormone (hGH) responsiveness to exercise and somatomedin C (SmC) activity were measured in ten children with insulin-deficient diabetes mellitus. Four of the ten children showed a significant degree of growth retardation. Normal SmC activity was found in association with elevated hGH levels. The hypothesis that growth-retarded diabetics have a failure of Sm production despite high hGH levels (analogous to malnutrition and Laron dwarfism) was not substantiated by this study. Chronic deficiency of insulin, itself a somatomedin, may play a major role in diabetic growth failure.

An autoradiographic study of equine hoof growth

International Nuclear Information System (INIS)

Pollitt, C.C.

1990-01-01

This report introduces an autoradiographic method of studying the growth of entire equine hoof sections. It has the advantage that accurate measurements can be made of changes in the rate of growth before and after treatment such as dietary supplementation with biotin on the development of laminitis

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

2016-08-29

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

Development of regional growth centres and impact on regional growth: A case study of Thailand’s Northeastern region

Directory of Open Access Journals (Sweden)

Nattapon Sang-arun

2013-01-01

Full Text Available This study investigates the spatial economic structure and inequality in Thailand at the national and regional levels, with a particular focus on the Northeastern region in the period from 1987 to 2007. The study has three main points: 1 examination of the economic structure and inequality at the national level and in the Northeastern region according to the Theil index, 2 determination of regional growth centres and satellite towns by using growth pole theory as a conceptual framework and incorporating spatial interaction analysis and 3 analysis of the relationship between regional growth centres and satellite towns with regard to the impact on growth and inequality. The results show that the Northeastern region is definitely the lagging region in the nation, by both gross domestic product (GDP and gross regional product (GRP per capita. It was therefore selected for a case study. Spatial analysis identified Nakhon Ratchasima, Khon Kaen, Udon Thani and Ubon Ratchathani as regional growth centres. Each of them has its own sphere of influence (or satellite towns, and the total area of regional growth centres and satellite towns are classified as sub-regions. The development of regional growth centres has a direct impact on sub-regional economic growth through economic and social relationships: urbanisation, industrial development, per capita growth, the number of higher educational institutes and so on. However, such growth negatively correlates with economic equality among the provinces in a sub-region. The inequality trend is obviously on an upswing. This study suggests that industrial links between regional growth centres and their satellite towns should be improved in order for regional growth centre development to have a consistently desirable effect on both economic growth and equality. Such a strong process means that the growth of regional growth centres will spread, leading to the development of their surrounding areas.

Leptin administration affects growth and skeletal development in a rat intrauterine growth restriction model: preliminary study.

Science.gov (United States)

Bar-El Dadon, Shimrit; Shahar, Ron; Katalan, Vered; Monsonego-Ornan, Efrat; Reifen, Ram

2011-09-01

Skeletal abnormalities are one of the hallmarks of growth delay during gestation. The aim of this study was to determine changes induced by leptin in skeletal growth and development in a rat model of intrauterine growth retardation (IUGR) and to elucidate the possible underlying mechanisms. Intrauterine growth retardation was induced prepartum and the effects of leptin to mothers prenatally or to offspring postnatally were studied. Radii were harvested and tested mechanically and structurally. Tibias were evaluated for growth-plate morphometry. On day 40 postpartum, total bone length and mineral density and tibial growth-plate width and numbers of cells within its zones of offspring treated with leptin were significantly greater than in the control group. Postnatal leptin administration in an IUGR model improves the structural properties and elongation rate of bone. These findings could pave the way to preventing some phenotypic presentations of IUGR. Copyright © 2011 Elsevier Inc. All rights reserved.

Studying historical occupational careers with multilevel growth models

Directory of Open Access Journals (Sweden)

Wiebke Schulz

2010-10-01

Full Text Available In this article we propose to study occupational careers with historical data by using multilevel growth models. Historical career data are often characterized by a lack of information on the timing of occupational changes and by different numbers of observations of occupations per individual. Growth models can handle these specificities, whereas standard methods, such as event history analyses can't. We illustrate the use of growth models by studying career success of men and women, using data from the Historical Sample of the Netherlands. The results show that the method is applicable to male careers, but causes trouble when analyzing female careers.

[Pubertal growth of 1,453 healthy children according to age at pubertal growth spurt onset. The Barcelona longitudinal growth study].

Science.gov (United States)

Carrascosa, Antonio; Yeste, Diego; Moreno-Galdó, Antonio; Gussinyé, Miquel; Ferrández, Ángel; Clemente, María; Fernández-Cancio, Mónica

2018-02-20

Pubertal growth pattern differs according to age at pubertal growth spurt onset which occurs over a five years period (girls: 8-13 years, boys: 10-15 years). The need for more than one pubertal reference pattern has been proposed. We aimed to obtain five 1-year-age-interval pubertal patterns. Longitudinal (6 years of age-adult height) growth study of 1,453 healthy children to evaluate height-for-age, growth velocity-for-age and weight-for-age values. According to age at pubertal growth spurt onset girls were considered: very-early matures (8-9 years, n=119), early matures (9-10 years, n=157), intermediate matures (10-11 years, n=238), late matures (11-12 years, n=127) and very-late matures (12-13 years, n=102), and boys: very-early matures (10-11 years, n=110), early matures (11-12 years, n=139), intermediate matures (12-13 years, n=225), late matures (13-14 years, n=133) and very-late matures (14-15 years, n=103). Age at menarche and growth up to adult height were recorded. In both sexes, statistically-significant (P<.0001) and clinically-pertinent differences in pubertal growth pattern (mean height-for-age, mean growth velocity-for-age and mean pubertal height gain, values) were found among the five pubertal maturity groups and between each group and the whole population, despite similar adult height values. The same occurred for age at menarche and growth from menarche to adult height (P<.05). In both sexes, pubertal growth spurt onset is a critical milestone determining pubertal growth and sexual development. The contribution of our data to better clinical evaluation of growth according to the pubertal maturity tempo of each child will obviate the mistakes made when only one pubertal growth reference is used. Copyright © 2018. Publicado por Elsevier España, S.L.U.

Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys

Energy Technology Data Exchange (ETDEWEB)

Prutskij, Tatiana, E-mail: tatiana.prutskij@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Makarov, Nykolay, E-mail: nykolay.makarov@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Attolini, Giovanni, E-mail: giovanni@imem.cnr.it [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

2016-04-15

Ternary and quaternary III–V alloys obtained by metal-organic vapor-phase epitaxy (MOVPE) grow very often with some degree of atomic ordering. Atomic ordering reduces the symmetry of the crystal lattice and thus drastically changes optical properties of the alloy. Moreover, the photoluminescence (PL) emission becomes polarized and its study helps to understand the atomic arrangement within the crystal lattice. In this work we experimentally studied the polarization of the PL emission from different crystallographic planes of several quaternary III–V semiconductor alloys grown on GaAs substrates by MOVPE. We compare the measured PL emission polarization angular patterns with those calculated with a model made for ternary alloys and discuss the limits of application of this model for quaternaries. It is found that the experimentally obtained polarization patterns are consistent with the existence of different ordering crystallographic planes for III- and for V-group atoms.

Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

Science.gov (United States)

Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

2015-03-11

GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

TEM studies of the crystal growth of indanthrone pigments

International Nuclear Information System (INIS)

McHendry, P.

1998-01-01

The aim of this work was to study the crystal growth of indanthrone during the pigmentation process. The colouring properties of a pigment are dependant on the chemical and crystallographic structure of the pigment. However, other factors are known to affect these properties including particle size, particle size distribution and level of dispersion in the chosen application medium. The parameters which affect the growth of the pigment particles were investigated with the emphasis placed on the mechanism by which growth took place. The final form of the crystals after growth was also investigated in some detail. Various electron microscopy techniques were employed in the investigations in this thesis. High and low magnification imaging and diffraction were studied on the CTEM (conventional transmission electron microscope) whilst PEELS (parallel electron energy loss spectroscopy) and DPC (differential phase contrast) studies took place on the VG HB5 STEM (scanning transmission electron microscope). In addition to these studies, x-ray diffraction and surface area analysis techniques were employed. The low magnification CTEM work gave good information on the size, shape and size distribution of the pigment particles and enabled detailed analysis of the level of growth attained under varied reaction conditions. (author)

InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

Energy Technology Data Exchange (ETDEWEB)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Durand, Christophe; Pan, Qing; Monroy, Eva; Eymery, Joel [CEA-CNRS-UJF Group ' ' Nanophysique et semi-conducteurs' ' , CEA/INAC/SP2M, Grenoble (France); Grenet, Louis [CEA-LITEN, Grenoble (France); Peyrade, David [Laboratoire des Technologies de la Microelectronique (LTM/CNRS), Grenoble (France); Bougerol, Catherine [CEA-CNRS-UJF Group ' ' Nanophysique et semi-conducteurs' ' , Institut Neel-CNRS, Grenoble (France); Chikhaoui, Walf [CEA-LETI, Grenoble (France)

2013-03-15

We investigate the influence of growth temperature, p -doping with bis-cyclopentadienyl magnesium (Cp{sub 2}Mg) and number N of multi-quantum wells on the surface morphology, the electrical and optical properties of InGaN-based solar cells grown by metal-organic vapour phase epitaxy. Atomic force microscopy measurements show no influence of multiple-quantum well number on the surface morphology, but a smoothing with the increase of the Cp{sub 2}Mg flow. Electrochemical capacitance-voltage profiling exhibits an increase of the N{sub a}-N{sub d} concentration when increasing the Cp{sub 2}Mg flow from 250 to 700 sccm. X-ray diffraction analysis and transmission electron microscopy measurements confirm completely strained quantum wells with similar superlattice period for N=5 to 30. Finally, first solar cells have been demonstrated with a maximum external quantum efficiency of 38% at 380 nm wavelength for N=30. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Laboratory study on influence of plant growth promoting ...

African Journals Online (AJOL)

The influence of rhizobacteria on the growth and tolerance of Zea mays (maize) in a petroleum hydrocarbon (crude oil) impacted medium was investigated. This study evaluated the effect of inoculating maize seeds with plant growth promoting rhizobacterial strains in a crude oil impacted medium. The rhizobacterial strains ...

Highly doped InP as a low loss plasmonic material for mid-IR region

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

2016-01-01

by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

Studies on the growth behavior of Chlorella, Haematococcus and ...

African Journals Online (AJOL)

Growth studies were conducted on green algae Chlorella, Scenedesmus and Haematococcus strains in batch mode cultures. In this study, the effect of sodium bicarbonate salt (NaHCO3) and carbon dioxide (CO2) gas as carbon source on microalgal cultures were investigated. For this purpose, growth response of the ...

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.; Korolev, S. A.; Okhapkin, A. I.; Khrykin, O. I.; Shashkin, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-11-15

A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of transistor structures with silicon nitride in an electron-beam-evaporation device are compared. It is shown that ex situ passivation changes neither the initial carrier concentration nor the mobility. In situ passivation makes it possible to protect the structure surface against uncontrollable degradation upon the finishing of growth and extraction to atmosphere. In the in situ passivated structure, the carrier concentration increases and the mobility decreases. This effect should be taken into account when manufacturing passivated GaN-based transistor structures.

Studies on the growth of penaeid prawns. 3. Growth pattern of @iPenaeus indicus@@ and @iMetapenaeus dobsoni@@

Digital Repository Service at National Institute of Oceanography (India)

Nair, S.R; Nair, K.K.C.; Gopalakrishnan, T.C.; Kutty, M.K.

Experimental studies on the growth of @iPenaeus indicus@@ and @iMetapenaeus dobsoni@@ for three and a half months under different levels of feeding gave a growth pattern different from that of von Bertalanffy. The two distinct growth patterns...

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Energy Technology Data Exchange (ETDEWEB)

Gregušová, D., E-mail: Dagmar.Gregusova@savba.sk [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Gucmann, F.; Kúdela, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Mičušík, M. [Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541 (Slovakia); Stoklas, R.; Válik, L. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Greguš, J. [Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248 (Slovakia); Blaho, M. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219 (Slovakia)

2017-02-15

Highlights: • AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. • Thin Al-layer deposited in-situ and oxidize in air – gate insulator. • MOSHFET vs HFET transistor properties, density of traps evaluated. - Abstract: GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposition (MOVPE). An AlOx layer was formed on the AlGaAs barrier layer by the air-assisted oxidation of a thin Al layer deposited in-situ in an MOVPE reactor immediately after AlGaAs/InGaAs growth. The HFETs and MOSHFETs exhibited a very low trap state density in the order of 10{sup 11} cm{sup −2} eV{sup −1}. Capacitance measurement yielded no significant difference between the HFET and MOSHFET structures. The formation of an AlOx layer modified the surface by partially eliminating surface states that arise from Ga-and As-based native oxides. The presence of an AlOx layer reflected in a reduced gate leakage current, which was evidenced by the two-terminal transistor measurement. Presented preparation procedure and device properties show great potential of AlGaAs/InGaAs-based MOSHFETs.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

Post-traumatic Growth in Breast Cancer Patients: A Qualitative Phenomenological Study

Directory of Open Access Journals (Sweden)

Rahele Fallah

2012-04-01

Full Text Available Background: Studies about cancer-related trauma have shown that psychological reactions to the disease are not exclusively negative but most patients also report positive experiences. These positive perceptions are also called post-traumatic growth and benefit patients psychologically, spiritually, and physically. Therefore,we have conducted a study about how women with breast cancer perceive posttraumatic growth and the recognition of its dimensions in Iran.Methods: This qualitative study was conducted by using Interpretative Phenomenological Analysis. A total of 23 women with breast cancer who met the inclusion criteria were selected after which patients completed a researcher-generated open-ended questionnaire. Data were analyzed according to the guidelines for the Interpretative Phenomenological Analysis and Smith method.Results: Participants’ perceptions in this study about post-traumatic growth included three themes: spiritual growth, appreciation of life, and increased personal strengths.Conclusion: Themes found in this study conformed to dimensions according to the Tedeschi and Calhoun theory of post-traumatic growth. However, relations with others were not found in the present study. We propose that interventions should be designed and implemented in order to facilitate and enhance post-traumatic growth.

Systematic study of influence of growth parameters on island morphology during molecular beam epitaxy growth: A Monte Carlo study

International Nuclear Information System (INIS)

Shankar Prasad Shrestha; Park, C.-Y.

2006-05-01

We have made a systematic study of influence of diffusion flux ratio (D/F), diffusional anisotropy (DA) and sticking anisotropy (SA) on island morphology to show the influence of each growth parameter on island morphology in presence of the other growth parameters. Our results show that the influence of D/F ratio and DA on island morphology depends on the sticking anisotropy of the adatoms. At the intermediate anisotropic case, increase in D/F ratio results in transition of the island morphology from 1d nature to 2 d nature. In anisotropic diffusion case, D/F ratio can change the growth direction of the island morphology. We also find that only sticking anisotropy is not sufficient to produce elongated islands, low D/F ratio is also essential. (author)

Synergistic growth studies of Entamoeba gingivalis using an Ecologen.

Science.gov (United States)

Gannon, J T; Linke, H A

1992-11-01

A unique multiple diffusion growth chamber, an Ecologen, designed for the study of interactions among microorganisms, was introduced as a means of growing xenic cultures of Entamoeba gingivalis with Crithidia sp. or Yersinia enterocolitica. Entamoeba gingivalis was grown in the central diffusion reservoir of the Ecologen connected to separate growth chambers inoculated with the microorganisms to be evaluated. Growth of the accompanying bacteria in the E. gingivalis compartment was almost completely eliminated, except for sparse Pseudomonas sp. growth. The most vital E. gingivalis cultures were observed when either Crithidia sp. or Y. enterocolitica were added to the Ecologen 48 h prior to the E. gingivalis inoculum. The medium which provided the best growth of the oral protozoan in this system was the new improved E. gingivalis medium containing antibiotics.

Simulation studies of emittance growth in RMS mismatched beams

International Nuclear Information System (INIS)

Cucchetti, A.; Wangler, T.; Reiser, M.

1991-01-01

As shown in a separate paper, a charged-particle beam, whose rms size is not matched when injected into a transport channel or accelerator, has excess energy compared with that of a matched beam. If nonlinear space-charge forces are present and the mismatched beam transforms to a matched equilibrium state, rms-emittance growth will occur. The theory yields formulas for the possible rms-emittance growth, but not for the time it takes to achieve this growth. In this paper we present the results of systematic simulation studies for a mismatched 2-D round beam in an ideal transport channel with continuous linear focusing. Emittance growth rates obtained from the simulations for different amounts of mismatch and initial charge will be presented and the emittance growth will be compared with the theory. 6 refs., 7 figs

Semilongitudinal cephalometric study of craniofacial growth in untreated Class III malocclusion.

Science.gov (United States)

Alexander, Ann E Zionic; McNamara, James A; Franchi, Lorenzo; Baccetti, Tiziano

2009-06-01

Class III growth in white subjects is poorly characterized because of the low prevalence of the disharmony and the clinical tendency to treat this condition early. The purpose of this study was to investigate craniofacial growth changes by using longitudinal cephalometric records of white subjects with untreated Class III malocclusions to provide comparison data for studies of Class III treatment outcomes. Longitudinal records of 103 subjects were analyzed. Annual incremental growth changes in craniofacial variables from early childhood to late adolescence were examined for each sex. Inferential statistics were applied to changes in mandibular length, midfacial length, and lower anterior facial height of each sex (Wilcoxon tests) and between sexes (Mann-Whitney U tests). In the girls, the adolescent spurt in mandibular growth occurred between the ages of 10 and 12 years. In the boys, the adolescent mandibular growth spurt was between 12 and 15 years. Statistically significant growth changes in the average increments of growth of these linear measurements occurred in both sexes between 12 and 15 years. Adolescent peaks in midfacial growth were at prepubertal ages in both sexes. During childhood (5-7 years), much craniofacial growth occurred. Moreover, there was considerable mandibular growth relative to the maxilla in Class III subjects after the adolescent growth spurt. White Class III subjects showed definite worsening of the relative mandibular prognathism and sagittal skeletal discrepancy between the jaws with growth. The growth pattern of 3 fundamental cephalometric measurements (lower anterior face height, midfacial length, and mandibular length) exhibited differences between Class III male and female subjects in both the timing and the size of average growth increments in the adolescent growth spurt.

Study on growth-promotion of paddy plants treated with oligo chitosan

International Nuclear Information System (INIS)

Norhashidah Talip; Maznah Mahmud; Norzita Yacob; Kamaruddin Hashim; Khairul Zaman Mohd Dahlan

2010-01-01

Chitosan has been degraded to produced oligo chitosan with different molecular weight using gamma ray irradiation from a Co-60 source in solid state (powder form) and liquid state (aqueous solution). Study on growth promotion of paddy plants was done using oligo chitosan and conventional plant growth promoter as a comparison. Oligo chitosan was used with different molecular weight and different concentrations. Smaller molecular weight of oligo chitosan with smaller concentration showed better result than bigger molecular weight of oligo chitosan as a plant growth promoter. This study also showed that conventional growth promoter can be replaced with oligo chitosan as it is more effective as plant growth promoter as well as more environmental friendly. (author)

Electrodeposition of Metal on GaAs Nanowires

Science.gov (United States)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

Energy Technology Data Exchange (ETDEWEB)

Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

2011-07-01

A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

Self-reflection, growth goals, and academic outcomes: A qualitative study.

Science.gov (United States)

Travers, Cheryl J; Morisano, Dominique; Locke, Edwin A

2015-06-01

Goal-setting theory continues to be among the most popular and influential theories of motivation and performance, although there have been limited academic applications relative to applications in other domains, such as organizational psychology. This paper summarizes existing quantitative research and then employs a qualitative approach to exploring academic growth via an in-depth reflective growth goal-setting methodology. The study focuses on 92 UK final-year students enrolled in an elective advanced interpersonal skills and personal development module, with self-reflection and growth goal setting at its core. Qualitative data in the form of regular reflective written diary entries and qualitative questionnaires were collected from students during, on completion of, and 6 months following the personal growth goal-setting programme. About 20% of students' self-set growth goals directly related to academic growth and performance; students reported that these had a strong impact on their achievement both during and following the reflective programme. Growth goals that were indirectly related to achievement (e.g., stress management) appeared to positively impact academic growth and other outcomes (e.g., well-being). A follow-up survey revealed that growth goal setting continued to impact academic growth factors (e.g., self-efficacy, academic performance) beyond the reflective programme itself. Academic growth can result from both academically direct and indirect growth goals, and growth goal setting appears to be aided by the process of simultaneous growth reflection. The implications for promoting academic growth via this unique learning and development approach are discussed. © 2014 The British Psychological Society.

Comparison of linear and nonlinear optical spectra of various ZnO epitaxial layers and of bulk material obtained by different experimental techniques

Energy Technology Data Exchange (ETDEWEB)

Priller, H.; Brueckner, J.; Klingshirn, C.; Kalt, H. [Institut fuer Angewandte Physik, Universitaet Karlsruhe, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe (Germany); Gruber, Th.; Waag, A. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert Einstein Allee 45, 89081 Ulm (Germany); Ko, H.J.; Yao, T. [Institute for Material Research, Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577 (Japan)

2004-03-01

We investigate ZnO epitaxial layers grown by MBE (Molecular Beam Epitaxy) and MOVPE (Metal Organic Vapor Phase Epitaxy) techniques. The samples show similar optical behavior in temperature dependent photoluminescence measurements, reflection and photoluminescence excitation spectroscopy in the low density regime. High excitation measurements show different behavior. While the MBE sample leads to stimulated emission from the exciton-exciton-scattering, an electron hole plasma is formed in the MOVPE sample which leads to stimulated emission at higher excitation intensities. The gain value measured by the variable stripe length method is much higher for the MBE grown sample. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

Energy Technology Data Exchange (ETDEWEB)

Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

2017-03-15

InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

AN ANALYSIS OF HUMAN CAPITAL DEVELOPMENT AND PRODUCTIVITY GROWTH- CASE STUDY, NIGERIA

Directory of Open Access Journals (Sweden)

Opeyemi Oluwabunmi Adejumo

2017-09-01

Full Text Available In order to address the direction of causality between human capital and productivity growth in Nigeria, the study first investigated the pattern of productivity growth in Nigeria between 1970 and 2010. Following the endogenous growth model, which argued that technical progress, through an effective labor force, could lead to long-run growth which can be determined from within an economy; but it actually depends on the efficiency with which resources available to such an economy are utilized. This is against the exogenous growth model which emphasized that long-run growth can be attained by some unexplained technological progress, which is exogenous to any economy. Based on this controversy in literature, this study empirically determined the productivity growth in Nigeria, as well as the causal relation between human capital development and productivity growth in Nigeria using the Engle-Granger causality test. The results revealed that productivity growth has been very low and unstable in Nigeria as it oscillated between -1.5% and 0.6%. In addition, the nexus between human capital and productivity growth was examined. The findings revealed that while productivity growth caused human capital development, human capital development did not cause productivity growth.

Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on γ-LiAlO2 substrates

International Nuclear Information System (INIS)

Mauder, Christof

2011-01-01

The growth of InGaN/GaN quantum well structures along a nonpolar orientation avoids the negative effects of the so-called ''Quantum Confined Stark Effect'' and is therefore considered as promising approach to improve wavelength stability and efficiency of future optoelectronic devices. This work describes physical principles and experimental results on metal-organic vapor phase epitaxy and characterization of GaN layers and InGaN/GaN quantum well structures, which grow along the nonpolar (1-100) m-plane on (100) lithium aluminum oxide (LiAlO 2 ) substrates. The limited thermal and chemical stability of the LiAlO 2 substrate can be improved by a nitridation step, which causes the formation of a thin (1-100) AlN layer on the surface of the LiAlO 2 . This enables the phase-pure deposition of high-quality and smooth (1-100) GaN layers. The low lattice mismatch of (1-100) GaN to (100) LiAlO 2 allows for a coherent growth of thin films, which show strong in-plane compressive strain. Due to the absence of a suitable slip plane, this strain relaxes only partly for layer thicknesses up to 1.7 μm. Low densities of line and planar defects compared to other heteroepitaxially deposited nonpolar GaN layers were assessed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron channelling contrast imaging microscopy (ECCI). The surface of the GaN layers is dominated by macroscopic hillocks, which are elongated along the c-axis direction and result in an average root mean square (RMS) roughness of ∝ 20 nm in a 50 x 50 μm 2 scan area. Spiral growth around line defects is seen as most likely cause for this effect. In a microscopic scale, one can detect a stripe pattern, which is formed by 2-3 nm high steps aligned parallel to the c-axis. An anisotropic growth mode is assumed responsible for this appearance. Between these steps, much smoother areas with typical RMS roughness of 0.2 nm (for a 0.5 x 0.5 μm 2 scan) is found, which is also an indication for

Growth and development studies Hiroshima and Nagasaki: research plan

Energy Technology Data Exchange (ETDEWEB)

Finch, S C; Jablon, S; Hrubec, Zdenek

1962-03-21

This report summarizes the research plan for prospective evaluation of growth and development in those exposed to varying amounts of ionizing radiation during childhood or while in utero in Hiroshima or Nagasaki. Some experimental observations are briefly presented to provide background information, and the results of previous studies of growth and development at the Atomic Bomb Casualty Commission (ABCC) are reviewed. Procedures have been described for determining the top of the growth curve for the in utero exposed and the maximum growth and development of those exposed during childhood in comparison to their nonexposed counterparts. Differences in growth and development found between exposed and nonexposed individuals will be analysed in relation to radiation dose, age at time of exposure, sex, and socioeconomic factors. Attempts will be made to determine whether or not abnormalities in visual acuity are increased in those exposed while in utero or during childhood as compared to nonexposed or comparable ages. 23 references, 2 tables.

Comparative phytochemical and growth inhibitory studies on the leaf ...

African Journals Online (AJOL)

Comparative phytochemical and growth inhibitory studies on the leaf and root bark extracts of securinega Virosa (roxb ex. Willd) baill ... The growth inhibitory tests were carried out between 1-30 mg/ in a period of 24-96 h while the phytochemical screening was carried out on the plant parts using standard methods. At 24 h ...

Theoretical and Experimental Study of Bacterial Colony Growth in 3D

Science.gov (United States)

Shao, Xinxian; Mugler, Andrew; Nemenman, Ilya

2014-03-01

Bacterial cells growing in liquid culture have been well studied and modeled. However, in nature, bacteria often grow as biofilms or colonies in physically structured habitats. A comprehensive model for population growth in such conditions has not yet been developed. Based on the well-established theory for bacterial growth in liquid culture, we develop a model for colony growth in 3D in which a homogeneous colony of cells locally consume a diffusing nutrient. We predict that colony growth is initially exponential, as in liquid culture, but quickly slows to sub-exponential after nutrient is locally depleted. This prediction is consistent with our experiments performed with E. coli in soft agar. Our model provides a baseline to which studies of complex growth process, such as such as spatially and phenotypically heterogeneous colonies, must be compared.

Challenges in nourishing the intrauterine growth-restricted foetus - Lessons learned from studies in the intrauterine growth-restricted foetal sheep.

Science.gov (United States)

Hay, William W; Brown, Laura D; Rozance, Paul J; Wesolowski, Stephanie R; Limesand, Sean W

2016-08-01

Previous attempts to improve growth and development of the intrauterine growth-restricted (IUGR) foetus during pregnancy have not worked or caused harm. Our research identifies tissue-specific mechanisms underlying foetal growth restriction and then tests strategies to improve growth and ameliorate many of the metabolic problems before the infant is born. The goal of our studies is to reduce the impact of foetal growth restriction at critical stages of development on the lifelong complications of IUGR offspring. Defining specific mechanisms that cause growth restriction in the foetus might identify specific nutrients and hormones that could be given to the mother to improve foetal growth and reduce metabolic complications, using strategies first tested in our IUGR animal model. ©2016 Foundation Acta Paediatrica. Published by John Wiley & Sons Ltd.

Untitled

Indian Academy of Sciences (India)

ZnSe-GaAs heterostructures by MOVPE 357. Deep levels in heterostructures often act as recombination and/or nonradiative centres and degrade their carrier transport and/or optical properties, We study the nature of deep traps in the HD by means of deep-level transient spectroscopy (DLTS), which provides a very ...

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

Energy Technology Data Exchange (ETDEWEB)

Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

2008-01-01

Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Monitoring of fetuses with intrauterine growth restriction: a longitudinal study

NARCIS (Netherlands)

Hecher, K.; Bilardo, C. M.; Stigter, R. H.; Ville, Y.; Hackelöer, B. J.; Kok, H. J.; Senat, M. V.; Visser, G. H.

2001-01-01

To describe the time sequence of changes in fetal monitoring variables in intrauterine growth restriction and to correlate these findings with fetal outcome at delivery. This was a prospective longitudinal observational multicenter study on 110 singleton pregnancies with growth-restricted fetuses

Scanning electron microscope studies of adsorption and crystal growth on tungsten

International Nuclear Information System (INIS)

Akhter, P.

1980-03-01

An ultra high vacuum scanning electron microscope (UHV-SEM), equipped with additional surface science techniques (AES, RHEED, work function), has been used to study the adsorption and growth of Cs and Ag on polycrystalline and (110) single crystal of W. These are used to study the layer plus island, or Stranski-Krastanov growth mode. The technique and apparatus are described. In the temperature range of 15 0 C, a whole variety of growth phenomena in the system Ag/W(110) has been seen by SEM. Two intermediate layers are followed by island growth, except at T > approximately equal to 500 0 C where island growth starts at a lower coverage. At T 0 C, layer-like growth is deduced from both AES and SEM measurements. The forms, crystallographic orientations and nucleation densities of islands have been explored in detail using a combination of SEM, AES and EBSP techniques. AES results at room temperature and at 500 0 C have been analysed and the results fit very well with SEM observations. A growth model for Ag/W(110) has been presented and atomistic nucleation theory has been extended, to understand the Stranski-Krastanov growth mode in general and the Ag/W(110) results in particular. (author)

Theoretical study of fractal growth and stability on surface

DEFF Research Database (Denmark)

Dick, Veronika V.; Solov'yov, Ilia; Solov'yov, Andrey V.

2009-01-01

We perform a theoretical study of the fractal growing process on surface by using the deposition, diffusion, aggregation method. We present a detailed analysis of the post-growth processes occurring in a nanofractal on surface. For this study we developed a method which describes the internal...... dynamics of particles in a fractal and accounts for their diffusion and detachment. We demonstrate that these kinetic processes are responsible for the formation of the final shape of the islands on surface after the post-growth relaxation....

Three-dimensional growth simulation: A study of substrate oriented films

International Nuclear Information System (INIS)

Besnard, A; Martin, N; Carpentier, L

2010-01-01

Monte Carlo simulations are developed to simulate the growth of three-dimensional columnar microstructure in thin films. We are studying in particular oriented microstructure like those produced with the Glancing Angle Deposition technique (GLAD). Some geometrical characteristics of the particles flux, the organization of defect sites on the substrate surface and the atomic surface diffusion are mainly investigated in order to predict the growth processes and the resulting features of the films. This study reports on simulations of thin film growth exhibiting an oblique and zigzag columnar microstructure. Column angle evolution and density are investigated versus incidence angle α or period number n and compared with experimental measurements.

High-efficiency, thin-film- and concentrator solar cells from GaAs. Final report; High-efficiency, Duennschicht- und Konzentrator-Solarzellen aus Galliumarsenid. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Wettling, W [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Bett, A W [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Pilkuhn, M [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Scholz, F [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Baldus, A [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Blieske, U [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Blug, A [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Duong, T [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Schetter, C [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Stollwerck, G [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Sulima, O [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Wegener, A [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Doernen, A [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Frankowsky, G [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Haase, D [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Hahn, G [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Hangleiter, A [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Stauss, P [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Tsai, C Y [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Zieger, K [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4

1996-10-01

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack formation. By a simultanous optimization of the other epitaxy and process parameters, the efficiency was increased up to 16.6% AM0 on 1 cm{sup 2} solar cells. Furthermore a hybrid epitaxy was investigated. A GaAs layer was deposited onto a Si substrate using MOVPE. The solar cell structure was grown with a low temperature LPE. Unexpected difficulties appeared with this process, so that fundamental experiments needed to be done with the LPE technology. So far, no solar cells could be manufactured with this method. In addition, work was performed on GaInP solar cells on GaAs substrate. An efficiency of 15.7% (AM0) was acchieved. (orig.) [Deutsch] Gegenstand des Projekts war die Herstellung hocheffizienter GaAs-Solarzellen und die Fertigung von Konzentratorsolarzellen. Dazu wurden wesentliche Fortschritte bei der Materialpraeparation, der Solarzellentechnologie und der Material- and Prozesscharakterisierung erzielt. Diese Erfolge druecken sich in den erzielten Wirkungsgraden aus: - GaAs-Solarzelle hergestellt mit MOVPE-Technologie: 22.9% auf 4 cm{sup 2} (AM1.5g) - GaAs-Solarzelle hergestellt

The first Seriatum study of growth by R. E. Scammon.

Science.gov (United States)

Miller, Elizabeth M

2018-03-01

Richard E. Scammon's article, "The First Seriatim Study of Human Growth," provided one of the best-known visuals in the field of human biology. Scammon resurrected longitudinal height data of one child from Buffon's Histoire Naturelle, converted them to metric, and plotted these measurements as a function of age. The result was the first graph of one individual's growth curve from birth to 18 years of age. This image was subsequently reproduced in numerous texts on human growth and biology. Published in 1927, Scammon's article provides a snapshot of the state of growth research at the time and gives a (literal) picture of the future of human biology. The graph of the growth of one child symbolizes the importance of process and variation in biological anthropology. © 2018 Wiley Periodicals, Inc.

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Energy Technology Data Exchange (ETDEWEB)

Hospodková, A.; Oswald, J.; Pangrác, J.; Kuldová, K.; Zíková, M.; Vyskočil, J.; Hulicius, E., E-mail: hulicius@fzu.cz

2016-01-01

This review paper summarizes some of results achieved during last years of our quantum dot (QD) research. We show that the QD shape (aspect ratio and elongation) significantly influences the QD photoluminescence (PL) spectrum. Magnetophotoluminescence can be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This behavior can be used for determining both the effective mass and the elongation fairly reliably from the magnetophotoluminescence spectra displaying at least two resolved bands. Lateral shape of InAs/GaAs QDs in vertically correlated structures was also studied. We found the ways to control the QD elongation and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission towards telecommunication wavelengths of Metal Organic Vapor Phase Epitaxy prepared InAs/GaAs QDs using InGaAs or GaAsSb covering strain reducing layer (SRL). Our results proved that GaAsSb SRL improves the QD PL properties and the type I or type II band alignment can be controlled by both, GaAsSb composition and QD size. Maintaining the type I heterostructure is important for high luminescence efficiency and emission wavelength stability of QD structure. The simulation of electron structure in InAs QDs covered with GaAsSb SRL and experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure of InAs/GaAs QDs covered by GaAsSb SRL with Sb content near 30% enabled us to achieve extremely long emission wavelength at 1.8 µm. The high amount of antimony in the SRL causes the preservation of QD size, and increased QD size prolongs the PL wavelength. The type II heterostructures with

A Study of Biomolecules as Growth Modifiers of Calcium Oxalate Crystals

Science.gov (United States)

Kwak, Junha John

Crystallization processes are ubiquitous in nature, science, and technology. Controlling crystal growth is pivotal in many industries as material properties and functions can be tailored by tuning crystal habits (e.g. size, shape, phase). In biomineralization, organisms exert excellent control over bottom-up synthesis and assembly of inorganic-organic structures (e.g. bones, teeth, exoskeletons). This is made possible by growth modifiers that range from small molecules to macromolecules, such as proteins. Molecular recognition of the mineral phase allows proteins to function as nucleation templates, matrices, and growth inhibitors or promoters. We are interested in taking a biomimetic approach to control crystallization via biomolecular growth modifiers. We investigated calcium oxalate monohydrate (COM), found in plants and kidney stones, as a model system of crystallization. We studied the effects of four common proteins on COM crystallization: bovine serum albumin (BSA), transferrin, lactoferrin, and lysozyme. Through kinetic studies of COM crystallization, we classified BSA and lysozyme as COM growth inhibitor and promoter respectively. Their inhibition and promotion effects were also evident in the macroscopic crystal habit. Through adsorption and microscopy experiments, we showed that BSA exhibits binding specificity for the apical surfaces of macroscopic COM crystals. Lysozyme, on the other, functions via a non-binding mechanism at the surface to accelerate the growth of the apical surfaces. We also synthesized and studied peptides derived from the protein primary sequences to identify putative domains responsible for these inhibition and promotion effects. Collectively, our study of physiologically relevant biomolecules suggests potential roles of COM modifiers in pathological crystallization and helps to develop guidelines for rational design of biomolecular growth modifiers for applications in crystal engineering.

Effect of Nonviral Plasmid Delivered Basic Fibroblast Growth Factor and Low Intensity Pulsed Ultrasound on Mandibular Condylar Growth: A Preliminary Study

Directory of Open Access Journals (Sweden)

Harmanpreet Kaur

2014-01-01

Full Text Available Objective. Basic fibroblast growth factor (bFGF is an important regulator of tissue growth. Previous studies have shown that low intensity pulsed ultrasound (LIPUS stimulates bone growth. The objective of this study was to evaluate the possible synergetic effect of LIPUS and local injection of nonviral bFGF plasmid DNA (pDNA on mandibular growth in rats. Design. Groups were control, blank pDNA, bFGF pDNA, LIPUS, and bFGF pDNA + LIPUS. Treatments were performed for 28 days. Significant increase was observed in mandibular height and condylar length in LIPUS groups. MicroCT analysis showed significant increase in bone volume fraction in bFGF pDNA + LIPUS group. Histomorphometric analysis showed increased cell count and condylar proliferative and hypertrophic layers widths in bFGF pDNA group. Results. Current study showed increased mandibular condylar growth in either bFGF pDNA or LIPUS groups compared to the combined group that showed only increased bone volume fraction. Conclusion. It appears that there is an additive effect of bFGF + LIPUS on the mandibular growth.

Using data from multiple studies to develop a child growth correlation matrix.

Science.gov (United States)

Anderson, Craig; Xiao, Luo; Checkley, William

2018-04-26

In many countries, the monitoring of child growth does not occur in a regular manner, and instead, we may have to rely on sporadic observations that are subject to substantial measurement error. In these countries, it can be difficult to identify patterns of poor growth, and faltering children may miss out on essential health interventions. The contribution of this paper is to provide a framework for pooling together multiple datasets, thus allowing us to overcome the issue of sparse data and provide improved estimates of growth. We use data from multiple longitudinal growth studies to construct a common correlation matrix that can be used in estimation and prediction of child growth. We propose a novel 2-stage approach: In stage 1, we construct a raw matrix via a set of univariate meta-analyses, and in stage 2, we smooth this raw matrix to obtain a more realistic correlation matrix. The methodology is illustrated using data from 16 child growth studies from the Bill and Melinda Gates Foundation's Healthy Birth Growth and Development knowledge integration project and identifies strong correlation for both height and weight between the ages of 4 and 12 years. We use a case study to provide an example of how this matrix can be used to help compute growth measures. © 2018 The Authors. Statistics in Medicine Published by John Wiley & Sons Ltd.

Population studies of echinoderms and growth and mortality of sea cucumbers

International Nuclear Information System (INIS)

Ebert, T.A.

1979-01-01

Progress is reported on the following studies: methods of collecting sea cucumbers; determination of growth rates of plates of the calcareous ring; use of growth parameters and a length-frequency distribution to estimate mortality and population turnover; movement of materials through the atoll ecosystem; and autoradiographic studies on spines of sea urchins

Social Dimensions of Personal Growth following Widowhood: A Three-Wave Study.

Science.gov (United States)

Recksiedler, Claudia; Loter, Katharina; Klaas, Hannah S; Hollstein, Betina; Perrig-Chiello, Pasqualina

2018-01-01

Losing one's spouse is one of the most stressful life events in old age, yet research on positive consequences of overcoming critical life events describes experiences of personal growth for survivors. Because prior studies conceptualized personal growth as a stable accomplishment of an individual, our study challenges this assumption by examining trajectories of personal growth and its links to two aspects of social support. We assume that personal growth is boosted by heightened levels of loss-related social support seeking during early years of widowhood. However, toward the later stages in the bereavement process, we expect personal growth to be fostered by perceived social embeddedness. Data stem from a survey on relationships in later life conducted in 2012, 2014, and 2016 in Switzerland. The final analytical sample consisted of 508 individuals aged 50+ years, who were on average 73 years old and widowed for about 3 years at baseline. Longitudinal explorative factor analyses yielded a 3-factorial solution for personal growth. Random-effects group-specific growth curves were used to examine the trajectories of personal growth and its subdimensions, by different levels of loss-related social support seeking and embeddedness in a supportive network, over the first 8 years of widowhood. Our analyses included time-invariant and time-varying covariates. On average, our findings point to a stable trajectory of personal growth after having become widowed in later life. Group-specific analyses, however, showed different courses in the trajectories for specific subdimensions of personal growth - particularly for spiritual change and appreciation of life. Average marginal effects also yielded group differences by loss-related support seeking in the level of personal growth over time, which highlight the importance of social support seeking, rather than social embeddedness, at all stages of the bereavement process. Findings underline the importance of a longitudinal and

Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals

Science.gov (United States)

Ramachandran, E.; Ramukutty, S.

2014-03-01

The crystal growth of diclofenac acid in silica gel is the first to be reported in literature. The growth parameters were varied to optimize the suitable growth condition. Single crystal X-ray diffraction method was used for the conformation of the crystal structure. Morphology studies showed that the growth is prominent along the b-axis and the prominent face is {002}. Fourier transform infrared spectral study was performed to identify the functional groups present in the crystal. Thermal stability and decomposition of the material were analyzed using thermo calorimetry in the temperature range 30-500 °C.

A Computational Study of the Growth of Hexagonal Ice

Science.gov (United States)

Fulford, Maxwell; Salvalaglio, Matteo; Parrinello, Michele; Molteni, Carla

Hexagonal ice (Ih) has two distinct crystallographic surfaces; a basal and prism surface. At low vapour pressures, Ih forms thin plates and elongated prisms, depending on the temperature. The macroscopic shape depends on the relative rate of growth of the basal and prism surfaces. The aim of our research is to estimate the relative rate of growth of the two surfaces for a range of temperatures and ultimately predict the shape of Ih, using computer simulations. Our simulations show the well-know phenomenon that the surface of ice lowers its interfacial free energy by forming a stable quasi-liquid layer (QLL). The QLL mediates crystal growth and has a thickness which varies with temperature and crystallographic surface. We use a combination of Molecular Dynamics and Metadynamics to study how the interfacial structure at the ice/quasi-liquid and quasi-liquid/vapour interfaces influence the adsorption potential, surface transport properties and growth shape..

Grain growth studies on nanocrystalline Ni powder

International Nuclear Information System (INIS)

Rane, G.K.; Welzel, U.; Mittemeijer, E.J.

2012-01-01

The microstructure of nanocrystalline Ni powder produced by ball-milling and its thermal stability were investigated by applying different methods of X-ray diffraction line-profile analysis: single-line analysis, whole powder-pattern modelling and the (modified) Warren–Averbach method were employed. The kinetics of grain growth were investigated by both ex-situ and in-situ X-ray diffraction measurements. With increasing milling time, the grain-size reduction is accompanied by a considerable narrowing of the size distribution and an increase in the microstrain. Upon annealing, initial, rapid grain growth occurs, accompanied by the (almost complete) annihilation of microstrain. For longer annealing times, the grain-growth kinetics depend on the initial microstructure: a smaller microstrain with a broad grain-size distribution leads to linear grain growth, followed by parabolic grain growth, whereas a larger microstrain with a narrow grain-size distribution leads to incessant linear grain growth. These effects have been shown to be incompatible with grain-boundary curvature driven growth. The observed kinetics are ascribed to the role of excess free volume at the grain boundaries of nanocrystalline material and the prevalence of an “abnormal grain-growth” mechanism.

A panel study of nuclear energy consumption and economic growth

International Nuclear Information System (INIS)

Apergis, Nicholas; Payne, James E.

2010-01-01

This study examines the relationship between nuclear energy consumption and economic growth for sixteen countries within a multivariate panel framework over the period 1980-2005. Pedroni's (1999, 2004) heterogeneous panel cointegration test reveals there is a long-run equilibrium relationship between real GDP, nuclear energy consumption, real gross fixed capital formation, and the labor force with the respective coefficients positive and statistically significant. The results of the panel vector error correction model finds bidirectional causality between nuclear energy consumption and economic growth in the short-run while unidirectional causality from nuclear energy consumption to economic growth in the long-run. Thus, the results provide support for the feedback hypothesis associated with the relationship between nuclear energy consumption and economic growth.

Growth studies of CVD-MBE by in-situ diagnostics

Science.gov (United States)

Maracas, George N.; Steimle, Timothy C.

1992-10-01

This is the final technical report for the three year DARPA-URI program 'Growth Studies of CVD-MBE by in-situ Diagnostics'. The goals of the program were to develop non-invasive, real time epitaxial growth monitoring techniques and combine them to gain an understanding of processes that occur during MBE growth from gas sources. We have adapted these techniques to a commercially designed gas source MBE system (Vacuum Generators Inc.) to facilitate technology transfer out of the laboratory into industrial environments. The in-situ measurement techniques of spectroscopic ellipsometry (SE) and laser induced fluorescence (LIF) have been successfully implemented to monitor the optical and chemical properties of the growing epitaxial film and the gas phase reactants. The ellipsometer was jointly developed with the J. Woolam Co. and has become a commercial product. The temperature dependence of group 3 and 5 desorption from GaAs and InP has been measured as well as the incident effusion cell fluxes. The temporal evolution of the growth has also been measured both by SE and LIF to show the smoothing of heterojunction surfaces during growth interruption. Complicated microcavity optical device structures have been monitored by ellipsometry in real time to improve device quality. This data has been coupled with the structural information obtained from reflection high energy electron diffraction (RHEED) to understand the growth processes in binary and ternary bulk 3-5 semiconductors and heterojunctions.

Multilevel approaches and the firm-agglomeration ambiguity in economic growth studies

NARCIS (Netherlands)

Oort, F.G. van; Burger, M.J.; Knoben, J.; Raspe, O.

2012-01-01

Empirical studies in spatial economics have shown that agglomeration economies may be a source of the uneven distribution of economic activities and economic growth across cities and regions. Both localization and urbanization economies are hypothesized to foster agglomeration and growth, but

Physics, MOVPE growth and investigation of m-plane GaN films and InGaN/GaN quantum wells on {gamma}-LiAlO{sub 2} substrates

Energy Technology Data Exchange (ETDEWEB)

Mauder, Christof

2011-12-20

The growth of InGaN/GaN quantum well structures along a nonpolar orientation avoids the negative effects of the so-called ''Quantum Confined Stark Effect'' and is therefore considered as promising approach to improve wavelength stability and efficiency of future optoelectronic devices. This work describes physical principles and experimental results on metal-organic vapor phase epitaxy and characterization of GaN layers and InGaN/GaN quantum well structures, which grow along the nonpolar (1-100) m-plane on (100) lithium aluminum oxide (LiAlO{sub 2}) substrates. The limited thermal and chemical stability of the LiAlO{sub 2} substrate can be improved by a nitridation step, which causes the formation of a thin (1-100) AlN layer on the surface of the LiAlO{sub 2}. This enables the phase-pure deposition of high-quality and smooth (1-100) GaN layers. The low lattice mismatch of (1-100) GaN to (100) LiAlO{sub 2} allows for a coherent growth of thin films, which show strong in-plane compressive strain. Due to the absence of a suitable slip plane, this strain relaxes only partly for layer thicknesses up to 1.7 {mu}m. Low densities of line and planar defects compared to other heteroepitaxially deposited nonpolar GaN layers were assessed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron channelling contrast imaging microscopy (ECCI). The surface of the GaN layers is dominated by macroscopic hillocks, which are elongated along the c-axis direction and result in an average root mean square (RMS) roughness of {proportional_to} 20 nm in a 50 x 50 {mu}m{sup 2} scan area. Spiral growth around line defects is seen as most likely cause for this effect. In a microscopic scale, one can detect a stripe pattern, which is formed by 2-3 nm high steps aligned parallel to the c-axis. An anisotropic growth mode is assumed responsible for this appearance. Between these steps, much smoother areas with typical RMS roughness of 0.2 nm (for a 0.5 x

Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

KAUST Repository

Ohkawa, Kazuhiro; Wang, Yaxin

2017-01-01

such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial

Can growth hormone treatment improve growth in children with severe growth failure due to anorexia nervosa? A preliminary pilot study

Directory of Open Access Journals (Sweden)

Juliane Léger

2017-11-01

Full Text Available Background/Aims: Growth failure is a difficult but key aspect of care in children with anorexia nervosa (AN. The effects of hGH therapy have not been studied. The aim was to investigate the effect of hGH treatment on height velocity (HV in children with AN. Methods: We carried out a retrospective observational study. Ten girls diagnosed with AN at 10.0 ± 1.9 years, with prolonged severe growth failure (HV < 2.5 cm/year for at least 18 months at the age of 13.3 ± 1.1 years and delayed puberty after nutritional rehabilitation, were treated with hGH (0.040 mg/kg/day from a bone age of 10.9 ± 1.7 years until they reached adult height. Height and HV were measured before treatment and at 12-month intervals during treatment. Results: Mean body mass index SDS remained unchanged, but HV increased significantly, from a median of 1.0 (0.7–2.1 to 7.1 (6.0–9.5 cm/year after one year (P < 0.002 and 5.6 (4.8–6.2 cm/year after two years of treatment. Height SDS increased from −2.2 ± 1.3 to −1.6 ± 1.3 after one year (P < 0.002 and −1.1 ± 1.5 after two years of GH treatment. Adult height (−0.1 ± 1.0 SDS was close to target height after 3.6 ± 1.4 years of GH treatment. Serum IGF-I levels increased significantly during treatment (P < 0.01. The treatment was well tolerated. Conclusions: This proof-of-concept study shows that hGH treatment is associated with significant improvements in linear growth in adolescents with AN and severe growth failure. A randomized placebo-controlled trial is required to determine the ultimate impact of GH treatment in patients with this severe, rare condition.

Education-growth dynamics for Australia: A case study approach

Directory of Open Access Journals (Sweden)

Kunofiwa Tsaurai

2015-04-01

Full Text Available The main focus of this research is to establish the relevancy of the Keynesian theory in explaining education expenditure on the economy of Austria using a case study approach. Wagner (1890 and Keynes (1936 have been for a long time been the two major theorists on the relationship between education expenditure and economic growth. Both theoretical and empirical literature review concludes that the two variables relate to each other in two distinct ways, the popular one being that education boost the economy (Keynes view followed by the Wagner view that says it is the economy that is doing well that pushes investment in education. A case study review for Austria clearly shows that an increase in education expenditure does not only constitute a significant portion of the GDP per capita in Austria but also provided a positive influence on economic growth and development. The author recommends Austria policymakers and responsible authorities to up their education development programmes and budgets in order to lay a strong foundation for sustainable economic growth and prosperity.

Multilevel approaches and the firm-agglomeration ambiguity in economic growth studies

NARCIS (Netherlands)

van Oort, F.G.|info:eu-repo/dai/nl/107712741; Burger, M.J.|info:eu-repo/dai/nl/371741092; Knoben, J.; Raspe, O.

2012-01-01

Empirical studies in spatial economics have shown that agglomeration economies may be a source of the uneven distribution of economic activities and economic growth across cities and regions. Both localization and urbanization economies are hypothesized to foster agglomeration and growth, but recent

RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

Energy Technology Data Exchange (ETDEWEB)

Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

1993-01-30

We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

Cohort profile: Pacific Islands Families (PIF) growth study, Auckland, New Zealand

OpenAIRE

Rush, E; Oliver, M; Plank, L D; Taylor, S; Iusitini, L; Jalili-Moghaddam, S; Savila, F; Paterson, J; Tautolo, E

2016-01-01

Purpose This article profiles a birth cohort of Pacific children participating in an observational prospective study and describes the study protocol used at ages 14?15?years to investigate how food and activity patterns, metabolic risk and family and built environment are related to rates of physical growth of Pacific children. Participants From 2000 to 2015, the Pacific Islands Families Study has followed, from birth, the growth and development of over 1000 Pacific children born in Auckland...

Growth and high pressure studies of zirconium sulphoselenide ...

Indian Academy of Sciences (India)

Growth and high pressure studies of zirconium sulphoselenide single ... tance was monitored in a Bridgman opposed anvil set-up up to 8 GPa pressure to identify .... The optical band gaps of the as-grown crystals were obtained by optical ab-.

Pharyngeal airway dimensions in skeletal class II: A cephalometric growth study

International Nuclear Information System (INIS)

Uslu-Akcam, Ozge

2017-01-01

This retrospective study aimed to evaluate the nasopharyngeal and oropharyngeal dimensions of individuals with skeletal class II, division 1 and division 2 patterns during the pre-peak, peak, and post-peak growth periods for comparison with a skeletal class I control group. Totally 124 lateral cephalograms (47 for skeletal class I; 45 for skeletal class II, division 1; and 32 for skeletal class II, division 2) in pre-peak, peak, and post-peak growth periods were selected from the department archives. Thirteen landmarks, 4 angular and 4 linear measurements, and 4 proportional calculations were obtained. The ANOVA and Duncan test were applied to compare the differences among the study groups during the growth periods. Statistically significant differences were found between the skeletal class II, division 2 group and other groups for the gonion-gnathion/sella-nasion angle. The sella-nasion-B-point angle was different among the groups, while the A-point-nasion-B-point angle was significantly different for all 3 groups. The nasopharyngeal airway space showed a statistically significant difference among the groups throughout the growth periods. The interaction among the growth periods and study groups was statistically significant regarding the upper oropharyngeal airway space measurement. The lower oropharyngeal airway space measurement showed a statistically significant difference among the groups, with the smallest dimension observed in the skeletal class II, division 2 group. The naso-oropharyngeal airway dimensions showed a statistically significant difference among the class II, division 1; class II, division 2; and class I groups during different growth periods

Pharyngeal airway dimensions in skeletal class II: A cephalometric growth study

Energy Technology Data Exchange (ETDEWEB)

Uslu-Akcam, Ozge [Clinic of Orthodontics, Ministry of Health, Tepebasi Oral and Dental Health Hospital, Ankara (Turkmenistan)

2017-03-15

This retrospective study aimed to evaluate the nasopharyngeal and oropharyngeal dimensions of individuals with skeletal class II, division 1 and division 2 patterns during the pre-peak, peak, and post-peak growth periods for comparison with a skeletal class I control group. Totally 124 lateral cephalograms (47 for skeletal class I; 45 for skeletal class II, division 1; and 32 for skeletal class II, division 2) in pre-peak, peak, and post-peak growth periods were selected from the department archives. Thirteen landmarks, 4 angular and 4 linear measurements, and 4 proportional calculations were obtained. The ANOVA and Duncan test were applied to compare the differences among the study groups during the growth periods. Statistically significant differences were found between the skeletal class II, division 2 group and other groups for the gonion-gnathion/sella-nasion angle. The sella-nasion-B-point angle was different among the groups, while the A-point-nasion-B-point angle was significantly different for all 3 groups. The nasopharyngeal airway space showed a statistically significant difference among the groups throughout the growth periods. The interaction among the growth periods and study groups was statistically significant regarding the upper oropharyngeal airway space measurement. The lower oropharyngeal airway space measurement showed a statistically significant difference among the groups, with the smallest dimension observed in the skeletal class II, division 2 group. The naso-oropharyngeal airway dimensions showed a statistically significant difference among the class II, division 1; class II, division 2; and class I groups during different growth periods.

Early childhood growth and cognitive outcomes: Findings from the MAL-ED study.

Science.gov (United States)

Scharf, Rebecca J; Rogawski, Elizabeth T; Murray-Kolb, Laura E; Maphula, Angelina; Svensen, Erling; Tofail, Fahmida; Rasheed, Muneera; Abreu, Claudia; Vasquez, Angel Orbe; Shrestha, Rita; Pendergast, Laura; Mduma, Estomih; Koshy, Beena; Conaway, Mark R; Platts-Mills, James A; Guerrant, Richard L; DeBoer, Mark D

2018-02-02

Although many studies around the world hope to measure or improve developmental progress in children to promote community flourishing and productivity, growth is sometimes used as a surrogate because cognitive skills are more difficult to measure. Our objective was to assess how childhood measures of anthropometry correlate with measures of child development in low-income settings with high prevalence of poor nutrition and enteric disease, to inform studies considering growth outcomes in the absence of direct child developmental skill assessment. Children from the MAL-ED study were followed from birth to 24 months of age in field sites in 8 low- and middle-income countries across 3 continents. Monthly weight, length, and head circumference measurements were performed. At 24 months, the Bayley Scales of Infant and Toddler Development was administered. We correlated cognitive measures at 24 months with anthropometric measurements from birth to 2 years comparing 3 constructs: absolute attained monthly measures, summative difference in measures from the mean growth curve, and rate of change in measures. Growth faltering at multiple time periods is related to Bayley cognitive outcomes at 24 months. Birthweight, overall growth by 18-24 months, and rate of growth in the 6- to 18-month period were most associated with 24-month developmental scores. In this study, head circumference measurements, compared with length, was more closely linked to cognitive scores at 24 months. Notably, all studies between growth and cognitive outcomes exhibited low r 2 values (0.001-0.049). Anthropometric measures, particularly head circumference, were related to cognitive development, although explaining a low percent of variance. When feasible, direct measures of child development may be more useful. © 2018 John Wiley & Sons Ltd.

Franchised fast food brands: An empirical study of factors influencing growth

OpenAIRE

Christopher A. Wingrove; Boris Urban

2017-01-01

Orientation: Franchising is a popular and multifaceted business arrangement that captures a sizeable portion of the restaurant industry worldwide. Research purpose: The study empirically investigated the influence of various site location and branding factors on the growth of franchised fast food restaurant brands across the greater Gauteng region. Motivation of the study: Researching which factors influence the growth of franchised fast food restaurant brands is important for an emer...

Limitations to CO2-induced growth enhancement in pot studies.

Science.gov (United States)

McConnaughay, K D M; Berntson, G M; Bazzaz, F A

1993-07-01

Recently, it has been suggested that small pots may reduce or eliminate plant responses to enriched CO 2 atmospheres due to root restriction. While smaller pot volumes provide less physical space available for root growth, they also provide less nutrients. Reduced nutrient availability alone may reduce growth enhancement under elevated CO 2 . To investigate the relative importance of limited physical rooting space separate from and in conjunction with soil nutrients, we grew plants at ambient and double-ambient CO 2 levels in growth containers of varied volume, shape, nutrient concentration, and total nutrient content. Two species (Abutilon theophrasti, a C 3 dicot with a deep tap root andSetaria faberii, a C 4 monocot with a shallow diffuse root system) were selected for their contrasting physiology and root architecture. Shoot demography was determined weekly and biomass was determined after eight and ten weeks of growth. Increasing total nutrients, either by increasing nutrient concentration or by increasing pot size, increased plant growth. Further, increasing pot size while maintaining equal total nutrients per pot resulted in increased total biomass for both species. CO 2 -induced growth and reproductive yield enhancements were greatest in pots with high nutrient concentrations, regardless of total nutrient content or pot size, and were also mediated by the shape of the pot. CO 2 -induced growth and reproductive yield enhancements were unaffected by pot size (growth) or were greater in small pots (reproductive yield), regardless of total nutrient content, contrary to predictions based on earlier studies. These results suggest that several aspects of growth conditions within pots may influence the CO 2 responses of plants; pot size, pot shape, the concentration and total amount of nutrient additions to pots may lead to over-or underestimates of the CO 2 responses of real-world plants.

Comparison study of catalyst nanoparticle formation and carbon nanotube growth: Support effect

International Nuclear Information System (INIS)

Wang Yunyu; Luo Zhiquan; Li Bin; Ho, Paul S.; Yao Zhen; Shi Li; Bryan, Eugene N.; Nemanich, Robert J.

2007-01-01

A comparison study has been conducted on the formation of catalyst nanoparticles on a high surface tension metal and low surface tension oxide for carbon nanotube (CNT) growth via catalytic chemical vapor deposition (CCVD). Silicon dioxide (SiO 2 ) and tantalum have been deposited as supporting layers before deposition of a thin layer of iron catalyst. Iron nanoparticles were formed after thermal annealing. It was found that densities, size distributions, and morphologies of iron nanoparticles were distinctly different on the two supporting layers. In particular, iron nanoparticles revealed a Volmer-Weber growth mode on SiO 2 and a Stranski-Krastanov mode on tantalum. CCVD growth of CNTs was conducted on iron/tantalum and iron/SiO 2 . CNT growth on SiO 2 exhibited a tip growth mode with a slow growth rate of less than 100 nm/min. In contrast, the growth on tantalum followed a base growth mode with a fast growth rate exceeding 1 μm/min. For comparison, plasma enhanced CVD was also employed for CNT growth on SiO 2 and showed a base growth mode with a growth rate greater than 2 μm/min. The enhanced CNT growth rate on tantalum was attributed to the morphologies of iron nanoparticles in combination with the presence of an iron wetting layer. The CNT growth mode was affected by the adhesion between the catalyst and support as well as CVD process

InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process

International Nuclear Information System (INIS)

Michon, A.; Patriarche, G.; Sagnes, I.; Beaudoin, G.; Saint-Girons, G.

2006-01-01

This contribution presents a thermodynamical analysis of the formation process of InAs/InP(001) quantum dots (QDs) or quantum sticks (QSs) grown by metalorganic vapor phase epitaxy. This study, based on an analytical model of Tersoff et al. adapted to our QD geometry, describes the origin of QD shape anisotropy and size dispersion. It also explains the shape transition from QDs to QSs under As-poor growth conditions. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Studying historical occupational careers with multilevel growth models

NARCIS (Netherlands)

Schulz, W.; Maas, I.

2010-01-01

In this article we propose to study occupational careers with historical data by using multilevel growth models. Historical career data are often characterized by a lack of information on the timing of occupational changes and by different numbers of observations of occupations per individual.

SIMS studies of oxide growth on beta-NiAl

Science.gov (United States)

Mitchell, D. F.; Prescott, R.; Graham, M. J.; Doychak, J.

1992-01-01

This paper reports on a study of the growth of aluminum oxide on beta-NiAl at temperatures up to 1200 C. The scales have been formed in two-stage experiments using O2-16 and O2-18 gases, and the various isotopic species have been located by direct imaging using SIMS. Supplementary information on oxide morphologies and structures has been obtained by SEM. SIMS images and depth profiles indicate where oxidation has taken place predominantly by cation or anion diffusion at different stages of the growth process. The way in which the presence of small amounts of reactive elements can affect scale growth is also considered. These results help to provide an improved understanding of the mechanism of alumina scale formation, which is of benefit in the development of oxidation-resistant alloys and intermetallics for service at high temperatures.

Optimizing the definition of intrauterine growth restriction: the multicenter prospective PORTO Study.

LENUS (Irish Health Repository)

Unterscheider, Julia

2013-04-01

The objective of the Prospective Observational Trial to Optimize Pediatric Health in Intrauterine Growth Restriction (IUGR) (PORTO Study), a national prospective observational multicenter study, was to evaluate which sonographic findings were associated with perinatal morbidity and mortality in pregnancies affected by growth restriction, originally defined as estimated fetal weight (EFW) <10th centile.

Mandibular growth changes and cervical vertebral maturation. a cephalometric implant study.

Science.gov (United States)

Gu, Yan; McNamara, James A

2007-11-01

To evaluate mandibular dimensional changes and regional remodeling occurring during five intervals of circumpubertal growth. This investigation evaluated a unique sample of subjects in whom tantalum implants were placed into the craniofacial complex during childhood. The sample was obtained from the Mathews and Ware implant study originally conducted at the University of California San Francisco in the 1970s, with longitudinal cephalometric records of 20 subjects (13 female, 7 male) available for evaluation. Cephalograms at six consecutive stages of cervical vertebral maturation (CS1 through CS6) were analyzed. Peak mandibular growth was noted during the interval from CS3 to CS4. Forward rotation of the mandible was due to greater mandibular growth posteriorly than anteriorly. Progressive closure of the condylar-ramus-occlusal (CRO) angle resulted in a forward and upward orientation of the ramus relative to the corpus of the mandible due to increased vertical growth of the condyle. A peak in mandibular growth at puberty was substantiated. Mandibular remodeling and condylar rotation continue to occur after the growth spurt.

Studying Crystal Growth With the Peltier Effect

Science.gov (United States)

Larsen, David J., Jr.; Dressler, B.; Silberstein, R. P.; Poit, W. J.

1986-01-01

Peltier interface demarcation (PID) shown useful as aid in studying heat and mass transfer during growth of crystals from molten material. In PID, two dissimilar "metals" solid and liquid phases of same material. Current pulse passed through unidirectionally solidifying sample to create rapid Peltier thermal disturbance at liquid/solid interface. Disturbance, measured by thermocouple stationed along path of solidification at or near interface, provides information about position and shape of interface.

Explaining development aid allocation by growth: A meta study

DEFF Research Database (Denmark)

Doucouliagos, Hristos; Paldam, Martin

  an interesting factor for two reasons: (1) It is relatively easy to interpret the results, and (2) it  is an important piece in the picture which suggests aid ineffectiveness. The paper is a meta-analysis of the 211 growth-aid estimates found in the 30 empirical studies. Additionally, we present new evidence...... using a panel data for 147 countries for the period 1967-2004. The result from both the meta-analysis and the primary data analysis is that growth does generate aid, so the dominating sign is positive. This result is driven partly by the large development banks....

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Franchised fast food brands: An empirical study of factors influencing growth

Directory of Open Access Journals (Sweden)

Christopher A. Wingrove

2017-03-01

Full Text Available Orientation: Franchising is a popular and multifaceted business arrangement that captures a sizeable portion of the restaurant industry worldwide. Research purpose: The study empirically investigated the influence of various site location and branding factors on the growth of franchised fast food restaurant brands across the greater Gauteng region. Motivation of the study: Researching which factors influence the growth of franchised fast food restaurant brands is important for an emerging market context such as South Africa when considering the marked increase in the consumption of fast foods. Design: A sample of 140 customers was surveyed from 12 leading franchised fast food outlets. Primary data were collected for various items representing site location and brand factors. Regression analysis was used to test the hypotheses. Findings: The overall findings showed that convenience and central facilities of a retail location are positively and significantly associated with the growth of the franchise fast food outlet. Practical implications: The study findings have implications for practitioners who need to take into account which factors influence revenue growth, since targeted interventions may be required to implement sustainable strategies by franchisors. Contribution: The findings may serve as a catalyst for this growing and important activity in South Africa and other emerging markets.

A prospective study of fetal head growth, autistic traits and autism spectrum disorder

Science.gov (United States)

Blanken, Laura M. E.; Dass, Alena; Alvares, Gail; van der Ende, Jan; Schoemaker, Nikita K.; El Marroun, Hanan; Hickey, Martha; Pennell, Craig; White, Scott; Maybery, Murray T.; Dissanayake, Cheryl; Jaddoe, Vincent W. V.; Verhulst, Frank C.; Tiemeier, Henning; McIntosh, Will; Whitehouse, Andrew

2018-01-01

Altered trajectories of brain growth are often reported in Autism Spectrum Disorder (ASD), particularly during the first year of life. However, less is known about prenatal head growth trajectories, and no study has examined the relation with postnatal autistic symptom severity. The current study prospectively examined the association between fetal head growth and the spectrum of autistic symptom severity in two large population‐based cohorts, including a sample of individuals with clinically diagnosed ASD. This study included 3,820 children from two longitudinal prenatal cohorts in The Netherlands and Australia, comprising 60 individuals with a confirmed diagnosis of ASD. Latent growth curve models were used to examine the relationship between fetal head circumference measured at three different time points and autistic traits measured in postnatal life using either the Social Responsiveness Scale or the Autism‐Spectrum Quotient. While lower initial prenatal HC was weakly associated with increasing autistic traits in the Dutch cohort, this relationship was not observed in the Australian cohort, nor when the two cohorts were analysed together. No differences in prenatal head growth were found between individuals with ASD and controls. This large population‐based study identified no consistent association across two cohorts between prenatal head growth and postnatal autistic traits. Our mixed findings suggest that further research in this area is needed. Autism Res 2018, 11: 602–612. © 2018 The Authors Autism Research published by International Society for Autism Research and Wiley Periodicals, Inc. Lay Summary It is not known whether different patterns of postnatal brain growth in Autism Spectrum Disorder (ASD) also occurs prenatally. We examined fetal head growth and autistic symptoms in two large groups from The Netherlands and Australia. Lower initial prenatal head circumference was associated with autistic traits in the Dutch, but not the Australian

A prospective study of fetal head growth, autistic traits and autism spectrum disorder.

Science.gov (United States)

Blanken, Laura M E; Dass, Alena; Alvares, Gail; van der Ende, Jan; Schoemaker, Nikita K; El Marroun, Hanan; Hickey, Martha; Pennell, Craig; White, Scott; Maybery, Murray T; Dissanayake, Cheryl; Jaddoe, Vincent W V; Verhulst, Frank C; Tiemeier, Henning; McIntosh, Will; White, Tonya; Whitehouse, Andrew

2018-04-01

Altered trajectories of brain growth are often reported in Autism Spectrum Disorder (ASD), particularly during the first year of life. However, less is known about prenatal head growth trajectories, and no study has examined the relation with postnatal autistic symptom severity. The current study prospectively examined the association between fetal head growth and the spectrum of autistic symptom severity in two large population-based cohorts, including a sample of individuals with clinically diagnosed ASD. This study included 3,820 children from two longitudinal prenatal cohorts in The Netherlands and Australia, comprising 60 individuals with a confirmed diagnosis of ASD. Latent growth curve models were used to examine the relationship between fetal head circumference measured at three different time points and autistic traits measured in postnatal life using either the Social Responsiveness Scale or the Autism-Spectrum Quotient. While lower initial prenatal HC was weakly associated with increasing autistic traits in the Dutch cohort, this relationship was not observed in the Australian cohort, nor when the two cohorts were analysed together. No differences in prenatal head growth were found between individuals with ASD and controls. This large population-based study identified no consistent association across two cohorts between prenatal head growth and postnatal autistic traits. Our mixed findings suggest that further research in this area is needed. Autism Res 2018, 11: 602-612. © 2018 The Authors Autism Research published by International Society for Autism Research and Wiley Periodicals, Inc. It is not known whether different patterns of postnatal brain growth in Autism Spectrum Disorder (ASD) also occurs prenatally. We examined fetal head growth and autistic symptoms in two large groups from The Netherlands and Australia. Lower initial prenatal head circumference was associated with autistic traits in the Dutch, but not the Australian, group. No differences

Multi-omics approach to study the growth efficiency and amino acid metabolism in Lactococcus lactis at various specific growth rates

Directory of Open Access Journals (Sweden)

Arike Liisa

2011-02-01

Full Text Available Abstract Background Lactococcus lactis is recognised as a safe (GRAS microorganism and has hence gained interest in numerous biotechnological approaches. As it is fastidious for several amino acids, optimization of processes which involve this organism requires a thorough understanding of its metabolic regulations during multisubstrate growth. Results Using glucose limited continuous cultivations, specific growth rate dependent metabolism of L. lactis including utilization of amino acids was studied based on extracellular metabolome, global transcriptome and proteome analysis. A new growth medium was designed with reduced amino acid concentrations to increase precision of measurements of consumption of amino acids. Consumption patterns were calculated for all 20 amino acids and measured carbon balance showed good fit of the data at all growth rates studied. It was observed that metabolism of L. lactis became more efficient with rising specific growth rate in the range 0.10 - 0.60 h-1, indicated by 30% increase in biomass yield based on glucose consumption, 50% increase in efficiency of nitrogen use for biomass synthesis, and 40% reduction in energy spilling. The latter was realized by decrease in the overall product formation and higher efficiency of incorporation of amino acids into biomass. L. lactis global transcriptome and proteome profiles showed good correlation supporting the general idea of transcription level control of bacterial metabolism, but the data indicated that substrate transport systems together with lower part of glycolysis in L. lactis were presumably under allosteric control. Conclusions The current study demonstrates advantages of the usage of strictly controlled continuous cultivation methods combined with multi-omics approach for quantitative understanding of amino acid and energy metabolism of L. lactis which is a valuable new knowledge for development of balanced growth media, gene manipulations for desired product

Study of creep crack growth behavior of 316LN welds

International Nuclear Information System (INIS)

Venugopal, S.; Kumar, Yatindra; Sasikala, G.

2016-01-01

Creep crack growth (CCG) behavior plays an important role in the assessment of structural integrity of components operating at elevated temperature under load/stress condition. Integrity of the welded components is decided primarily by that of the weld. Creep crack growth behavior of 316LN welds prepared using consumables developed indigenously for welding the 316L(N) SS components for the Prototype Fast Breeder Reactor has been studied. The composition of the consumable is tailored to ensure about 5 FN (ferrite number) of δ ferrite in the weld deposit. Constant load CCG tests were carried out as per ASTM E1457 at different applied loads at temperatures in the range 823-923 K on CT specimens fabricated from 'V-type' weld joints with notch in the weld centre. The creep crack growth rate (α) is commonly correlated to a time dependent fracture mechanics parameter known as C*. The α3-C* correlations (α=D(C*) φ ) were established in the temperature range 823-923 K. The crack growth rates at different temperature have been compared with that given in RCC-MR. Extensive microstructural and fractographic studies using optical and scanning electron microscopy were carried out on the CCG tested specimens to understand the effect of transformation of delta ferrite on the creep damage and fracture mechanisms associated with CCG in the weld metal at different test conditions. (author)

A comparative study of ethylene growth response kinetics in eudicots and monocots reveals a role for gibberellin in growth inhibition and recovery.

Science.gov (United States)

Kim, Joonyup; Wilson, Rebecca L; Case, J Brett; Binder, Brad M

2012-11-01

Time-lapse imaging of dark-grown Arabidopsis (Arabidopsis thaliana) hypocotyls has revealed new aspects about ethylene signaling. This study expands upon these results by examining ethylene growth response kinetics of seedlings of several plant species. Although the response kinetics varied between the eudicots studied, all had prolonged growth inhibition for as long as ethylene was present. In contrast, with continued application of ethylene, white millet (Panicum miliaceum) seedlings had a rapid and transient growth inhibition response, rice (Oryza sativa 'Nipponbare') seedlings had a slow onset of growth stimulation, and barley (Hordeum vulgare) had a transient growth inhibition response followed, after a delay, by a prolonged inhibition response. Growth stimulation in rice correlated with a decrease in the levels of rice ETHYLENE INSENSTIVE3-LIKE2 (OsEIL2) and an increase in rice F-BOX DOMAIN AND LRR CONTAINING PROTEIN7 transcripts. The gibberellin (GA) biosynthesis inhibitor paclobutrazol caused millet seedlings to have a prolonged growth inhibition response when ethylene was applied. A transient ethylene growth inhibition response has previously been reported for Arabidopsis ethylene insensitive3-1 (ein3-1) eil1-1 double mutants. Paclobutrazol caused these mutants to have a prolonged response to ethylene, whereas constitutive GA signaling in this background eliminated ethylene responses. Sensitivity to paclobutrazol inversely correlated with the levels of EIN3 in Arabidopsis. Wild-type Arabidopsis seedlings treated with paclobutrazol and mutants deficient in GA levels or signaling had a delayed growth recovery after ethylene removal. It is interesting to note that ethylene caused alterations in gene expression that are predicted to increase GA levels in the ein3-1 eil1-1 seedlings. These results indicate that ethylene affects GA levels leading to modulation of ethylene growth inhibition kinetics.

Analysis of therapeutic growth hormone preparations: report of an interlaboratory collaborative study on growth hormone assay methodologies.

Science.gov (United States)

Bristow, A F; Jeffcoate, S L

1992-09-01

Recombinant DNA-derived human growth hormone (somatotropin) is widely used to treat growth hormone-deficient children. The potency of this product is determined by in-vivo bioassay in hypophysectomized rats, which is imprecise, costly and invasive, and there have been suggestions that it could safely be replaced with in-vitro or physico-chemical alternatives. In this report we present the results of a collaborative study designed to test this proposal. Somatotropin was modified by mild or severe proteolysis, mild or severe oxidation or treatment at high pH, and compared in a multi-centre collaborative study with unmodified somatotropin or with dimerized somatotropin. Participating laboratories included manufacturers and national control laboratories, and pharmacopoeial bioassays were compared with in-house in-vitro and physico-chemical bioassays. Although performing adequately with untreated somatotropin, for degraded samples the in-vivo bioassays were relatively unresponsive to changes in the growth hormone molecule. In contrast, the physico-chemical assays, in particular the reverse-phase HPLC, performed with a high degree of selectivity. We conclude that in the case of somatotropin, the in-vivo bioassay can be removed from the routine product specification with an acceptable degree of security. This however does not obviate the requirement rigorously to demonstrate biological activity in-vivo during product development, nor may the conclusions of this study be applied to other therapeutic recombinant proteins without similar collaborative investigations.

[Growth of breastfed and bottle-fed infants up to 2 years of age: CLACYD (Lactation, Alimentation, Growth and Development) study 1993-1995].

Science.gov (United States)

Agrelo, F; Lobo, B; Chesta, M; Berra, S; Sabulsky, J

1999-07-01

Studies done in various countries show important differences in the growth of breastfed and bottle-fed children. In addition, it has been found that breast-fed children grow more slowly beginning at the age of 2 or 3 months in comparison with the reference pattern of the U.S. National Center for Health Statistics (NCHS) and the World Health Organization (WHO). These results cast doubt on whether maximum growth is the same as optimal growth. The objective of this study was to compare the growth in weight and length, from birth to 24 months, for a group of children who were breast-fed with that of a group who were bottle-fed. The study was also intended to describe the growth of the breastfed group in relation to the NCHS/WHO norms and a WHO "12-month breast-fed pooled data set." For this research, data were analyzed from the "Cordoba: lactation, feeding, growth, and development" study (or CLACYD study, for its Spanish-language acronym). That study looked at a representative cohort, stratified by social class, of children born in 1993 in the city of Cordoba, Argentina. The researchers analyzed anthropometric data on 74 children who were breast-fed during the first year of life and on 108 bottle-fed children. The data had been recorded, using standardized techniques, at birth and at 6, 12, and 24 months of age. Both groups were homogenous with respect to the age and schooling of the parents, social stratum, birth order, maternal height, and child's weight and length at birth. The living conditions (housing construction and availability of water and sewer services) were better among the group that was bottle-fed (P = 0.04). The breast-fed children had a lower weight and a shorter length at 6, 12, and 24 months than did the bottle-fed children. The breast-fed children also showed a slowing in growth with respect to the NCHS/WHO guidelines beginning in the second semester. This indicates that the NCHS/WHO norms are not totally adequate for evaluating the growth of breast

Posttraumatic Growth and Resilience after a Prolonged War: A Study in Baghdad, Iraq

Science.gov (United States)

Mahdi, Heyder Kamil; Prihadi, Kususanto; Hashim, Sahabuddin

2014-01-01

Although traumatic events are usually associated with posttraumatic stress disorders (PTSD), many study have also reported that exposure to traumatic events might also lead to psychological growth, known as posttraumatic growth (PTG). The main aim of this study is to investigate whether resilience has a significant role in developing PTG among…

Determinants of infant growth in Eastern Uganda: a community-based cross-sectional study.

Science.gov (United States)

Engebretsen, Ingunn Marie Stadskleiv; Tylleskär, Thorkild; Wamani, Henry; Karamagi, Charles; Tumwine, James K

2008-12-22

Child under-nutrition is a leading factor underlying child mortality and morbidity in Sub-Saharan Africa. Several studies from Uganda have reported impaired growth, but there have been few if any community-based infant anthropometric studies from Eastern Uganda. The aim of this study was to describe current infant growth patterns using WHO Child Growth Standards and to determine the extent to which these patterns are associated with infant feeding practices, equity dimensions, morbidity and use of primary health care for the infants. A cross-sectional survey of infant feeding practices, socio-economic characteristics and anthropometric measurements was conducted in Mbale District, Eastern Uganda in 2003; 723 mother-infant (0-11 months) pairs were analysed. Infant anthropometric status was assessed using z-scores for weight-for-length (WLZ), length-for-age (LAZ) and weight-for-age (WAZ). Dependent dichotomous variables were constructed using WLZ growth among Ugandan infants.

Studies and calculations of transverse emittance growth in proton storage rings

International Nuclear Information System (INIS)

Mane, S.R.; Jackson, G.

1989-01-01

When high energy storage rings are used to collide beams of particles and antiparticles for high energy physics experiments, it is important to obtain as high an integrated luminosity as possible. Reduction of integrated luminosity can arise from several factors, in particular from growth of the transverse beam sizes (transverse emittances). We have studied the problem of transverse emittance growth in high energy storage rings caused by random dipole noise kicks to the beam. A theoretical formula for the emittance growth rate is derived, and agreement is obtained with experimental measurements where noise of known amplitude and power spectrum was deliberately injected into the Fermilab Tevatron, to kick the beam randomly. In the experiment, phase noise was introduced into the Tevatron rf system, and the measured dependence of horizontal emittance growth on phase noise amplitude is compared against the theoretically derived response. (orig.)

Tax Revenue and Economic Growth: A Study of Nigeria and Ghana

Directory of Open Access Journals (Sweden)

Francis Chinedu Egbunike

2018-03-01

Full Text Available Tax revenue is frequently considered as an alternative form of sustainable financing within a stable and predictable fiscal environment to promote growth and enable governments to finance their social and infrastructural needs. The objective of the study is to examine the effect of tax revenue on economic growth of Nigeria and Ghana. The study used multiple regressions as tools of analysis. The study finds a positive impact of tax revenue on the gross domestic product of Nigeria and Ghana confirming prior studies. The study recommended among others that adequate measure to ensure that revenue generated from the tax is effectively utilized to develop and grow the economy.DOI: 10.15408/sjie.v7i2.7341

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

International Nuclear Information System (INIS)

Romanov, V. V.; Dement’ev, P. A.; Moiseev, K. D.

2016-01-01

Indium-antimonide quantum dots (7–9 × 10"9 cm"2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

Growth performance, haematological and biochemical study of ...

African Journals Online (AJOL)

A significant difference (P<0.05) was established in the growth parameters determined in the C. gariepinus fingerlings fed with the four frog formulations, namely, final weight, total weight, and mean feed gain, mean weight gain and feed conversion ratio The 40% R. galamensis ration elicited higher growth values than all ...

Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Miller, C. M.; Korakakis, D.

2011-01-01

Aluminum Nitride (AlN) and Gallium Nitride (GaN) superlattice structures are often characterized by a network of cracks resulting from the large lattice mismatch and difference in thermal expansion coefficients, especially as the thickness of the layers increases. This work investigates the influence of indium as a surfactant on strain and cracking in AlN/GaN DBRs grown via Metal Organic Vapor Phase Epitaxy (MOVPE). DBRs with peak reflectivities ranging from 465 nm to 540 nm were grown and indium was introduced during the growth of the AlN layer. Image processing techniques were used to quantify the crack length per square millimeter and it was observed that indium has a significant effect on the crack formation and reduced the total crack length in these structures by a factor of two.

Study on the Changes in Enzyme and Insulin-like Growth Factor-1 Concentrations in Blood Serum and Growth Characteristics of Velvet Antler during the Antler Growth Period in Sika Deer (

Directory of Open Access Journals (Sweden)

Jaehyun Park

2015-09-01

Full Text Available This study was conducted to investigate changes in blood enzyme parameters and to evaluate the relationship between insulin-like growth factor-1 (IGF-1, antler growth and body weight during the antler growth of sika deer (Cervus nippon. Serum enzyme activity and IGF-1 concentrations were measured in blood samples collected from the jugular and femoral veins at regular intervals during the antler growth period. Blood samples were taken in the morning from fasted stags (n = 12 which were healthy and showed no clinical signs of disease. Alfalfa was available ad libitum and concentrates were given at 1% of body weight to all stags. The experimental diet was provided at 9 am with water available at all times. There were no significant differences in alkaline phosphatase, aspartate aminotransferase, and alanine aminotransferase during antler growth, but alkaline phosphatase concentrations increased with antler growth progression, and the highest alkaline phosphatase concentration was obtained 55 days after antler casting. Serum IGF-1 concentrations measured from blood samples taken from the jugular vein during antler growth, determined that levels of IGF-1 was associated with body weight and antler growth patterns. Serum IGF-1 concentrations were higher at the antler cutting date than other sampling dates. Antler length increased significantly during antler growth (p<0.001, and there was a similar trend to between right and left beams. Body weight increased with antler growth but was not significant. Consequently it appeared that serum alkaline phosphatase concentration was related to antler growth and both antler growth and body weight were associated positively with IGF-1 concentrations during antler growth.

Supercapacitor electrodes by direct growth of multi-walled carbon nanotubes on Al: a study of performance versus layer growth evolution

International Nuclear Information System (INIS)

Zhao, Fu; Vicenzo, Antonello; Hashempour, Mazdak; Bestetti, Massimiliano

2014-01-01

Supercapacitor electrodes were fabricated by direct growth of multi-walled carbon nanotubes (CNTs) on Al current collectors via a chemical vapor deposition process in the presence of a spin-coated Co-Mo catalyst. A detailed study of the dependence of the CNT layer structure and thickness on growth time set the basis for the assessment of supercapacitors assembled with the CNTs/Al electrodes. As the main features of the layer growth evolution, an increase in the population of finer CNTs and a shift from a random entanglement to a rough vertical alignment of nanotubes were noted with proceeding growth. The growth time influence on the performance of supercapacitors was in fact apparent. Particularly, the specific capacitance of CNTs/Al electrodes in 0.5 M K 2 SO 4 aqueous electrolyte increased from 35 to 80 F g −1 as the CNT layer thickness varied from 20 to 60 μm, with a concurrent loss in rate capability (knee frequency from 1 kHz to 60 Hz). The latter was excellent in general, arguably due to both a fast ion transport through the interconnected CNT network and a negligible contribution of the active layer/current collector contact to the equivalent series resistance (0.15–0.22 mΩ g), a distinct advantage of the direct growth fabrication method. Overall, a relatively simple process of direct growth of CNTs on Al foils is shown to be an effective method to fabricate supercapacitor electrodes, notably in the absence of special measures and processing steps finalized to a tight control of nanotubes growth and organization

Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Hoffmann, Veit; Netzel, Carsten; Knauer, Arne; Weyers, Markus [FBH, Berlin (Germany); Ploch, Simon; Rass, Jens [Institute of Solid State Physics, TU Berlin (Germany); Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2010-07-01

Recently a number of groups have reported laser diodes in the green spectral range on semi- and nonpolar GaN. Nevertheless the growth process on semipolar surfaces is not well understood. In this study 3.5 {mu} m thick MOVPE grown GaN layers on bulk m-plane, (11 anti 22), (10 anti 12), and (10 anti 11) GaN substrates were investigated. XRD rocking curves exhibit a FWHM of less than 150{sup ''}, indicating excellent crystalline quality. But the surface morphology exhibits hillocks with a height of 1 {mu}m and lateral extension of 150 {mu}m in many cases. Depending on the substrate orientation and the growth temperature different hillock shapes were observed. Morphology and luminescence data point to threading dislocations as formation sources. In QWs the hillock structure is reproduced in the emission intensity and wavelength distribution on (10 anti 11) but not on the m-plane surfaces. The hillocks could be eliminated for the semipolar planes (not for the m-plane) by increasing the reactor pressure and lowering the growth temperature. Hillock free separate confinement laser structures emitting at 405 nm feature a very homogeneous luminescence in micro-PL and show amplified spontaneous emission under high power stripe excitation. Furthermore the In incorporation was found to be highest in QWs on (10 anti 11).

Thermodynamic concepts in semiconductor quantum dot technology

International Nuclear Information System (INIS)

Shchukin, V.

2001-01-01

Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

ECONOMIC GROWTH - AN ILLUSION? STUDY CASE:ROMANIA

Directory of Open Access Journals (Sweden)

Camelia MORARU

2013-12-01

Full Text Available Literature has devoted considerable attention to economic growth because it creates the premises for achieving major goals such as route out of poverty of underdeveloped countries or contribute to raising the standard of living in developed countries. Economic growth has become an “order of the day” term, propagated by various "players" of economic and social life, in this way gaining various interpretations and meanings. This paper presents the results of the measures adopatate in order to recover Romanian economic situation. The austerity measures adopted until recently not allowed, however, to create a favorable environment for growth, taking into consideration that it is almost impossible for an economy to grow when conditions are limiting. Fiscal policies have focused on reducing the budget deficit, which led on slaughtering economic growth. Given the uncertain economic context, FDI was hardly drew into our country, their value last year has been insignificant. We can even say that the previous ended year was one economically, because our country did not recognize the road to the economic recovery.

Study on Growth Rhythm of Juveniles Cistolemmys Flavomarginata for One and Two Years Old

Science.gov (United States)

Huang, Bin

Growth of one and two year old Cistolemmys flavomarginata is studied. In natural temperature and under artificial feeding condition, juvenile turtles grow for 180 days in Xinyang, one year old turtle average body weight increased from 18.1 g to 54.5 g, the relative growth rate is 204.1%, the absolute growth rate is 0.21. two year old turtle average body weight increased from 46.8 g to 101.1 g, the relative growth rate is 115.98%, the absolute growth rate is 0.30. But two year old turtle growth rate is slower than that of one year old turtle. The body weight, carapace length, carapace width, plastron length, plastron width and carapace high are correlated positively to daily age. The body weight growth equations of one and two year old turtles are deduced. Compared with other reptiles, whole growth cycle is grasped systemically by the growth patterns.

Growth hormone in intra-uterine growth retarded newborns.

Science.gov (United States)

Setia, Sajita; Sridhar, M G; Bhat, Vishnu; Chaturvedula, Latha

2007-11-01

To study growth hormone levels in IUGR and healthy controls and its association with birth weight and ponderal index. We studied 50 Intra uterine growth retarded (IUGR) and 50 healthy newborns born at term by vaginal delivery in JIPMER, Pondicherry, India. Cord blood was collected at the time of delivery for measurement of growth hormone. When compared with healthy newborns, IUGR newborns had higher growth hormone levels (mean +/- SD, 23.5 +/- 15.6 vs 16.2 +/- 7.61 ngm/ml, P = 0.019). A negative correlation was identified between growth hormone levels and birth weight (r2 = - 0.22, P = 0.03) and ponderal index (r2 = - 0.36, P = 0.008). Correlation of growth hormone levels was much more confident with ponderal index than with birth weight. At birth IUGR infants display increased growth hormone levels which correlate with ponderal index much more confidently than with birth weight.

Growth patterns and annual growth cycle of Acacia karroo Hayne in ...

African Journals Online (AJOL)

... karroo; alice; botany; compensatory growth; condition; development; eastern cape; emergence; environmental conditions; field study; growth cycle; growth initiation; growth patterns; growth strategy; leaf growth; plant growth; savanna; shoot growth; soil depth; soil moisture; south africa; university of fort hare; water stress ...

Predicting growth rates and growth boundary of Listeria monocytogenes - An international validation study with focus on processed and ready-to-eat meat and seafood

DEFF Research Database (Denmark)

Mejlholm, Ole; Gunvig, A.; Borggaard, C.

2010-01-01

The performance of six predictive models for Listeria monocytogenes was evaluated using 1014 growth responses of the pathogen in meat, seafood, poultry and dairy products. The performance of the growth models was closely related to their complexity i.e. the number of environmental parameters they...... be accurate. The successfully validated models are useful for assessment and management of L monocytogenes in processed and ready-to-eat (RTE) foods....... to accurately predict growth responses of L. monocytogenes in the wide range of food evaluated in the present study. When complexity of L monocytogenes growth models matches the complexity of foods of interest. i.e. the number of hurdles to microbial growth, then predicted growth responses of the pathogen can...

Study on the PWSCC Crack Growth Rate for Steam Generator Tubing

International Nuclear Information System (INIS)

Kang, Shin Hoo; Hwang, Il Soon; Lim, Jun; Lee, Seung Gi; Ryu, Kyung Ha

2008-03-01

Using in-situ Raman spectroscopy and crack growth rate lest system in simulated PWR primary water environment, the relationship between the oxide film chemistry and the PWSCC growth rate has been studied. We used I/2T compact tension specimen and disk specimen made of Alloy 182 and Alloy 600 for crack growth rate test and in-situ Raman spectroscopy measurement. Test was made in a refreshed autoclave with 30 cc STP / kg of dissolved hydrogen concentration. Conductivity, pH, dissolved hydrogen and oxygen concentration were continuously monitored at the outlet. The crack growth rate was measured by using switching DCPD technique under cyclinc triangular loading and at the same time oxide phase was determined by using in-situ Raman spectra at the elevation of the temperature. Additionally Raman spectroscopy was achieved for oxide phase transition of Alloy 600 according to the temperature and dissolved hydrogen concentration, 2 and 30cc STP / kg

Growth studies on Lens culinaris after gamma irradiation

International Nuclear Information System (INIS)

Ahmad, S.; Bokhari, F.S.; Shahnaz, F.

1996-01-01

A study on growth parameters was carried out on two varieties of Lens culinaris after gamma irradiation. Experiment was conducted at Botanical Garden, Bahauddin Zakariya University, Multan in 1993. The germination percentage, survival percentage, height, branch number, pods per plant and 100-seed weight decreased with the increasing dose of radiation. Comparing the two varieties, variety-86642 appeared more sensitive to radiation than variety-87528

Physiological growth hormone replacement and rate of recurrence of craniopharyngioma: the Genentech National Cooperative Growth Study.

Science.gov (United States)

Smith, Timothy R; Cote, David J; Jane, John A; Laws, Edward R

2016-10-01

OBJECTIVE The object of this study was to establish recurrence rates in patients with craniopharyngioma postoperatively treated with recombinant human growth hormone (rhGH) as a basis for determining the risk of rhGH therapy in the development of recurrent tumor. METHODS The study included 739 pediatric patients with craniopharyngioma who were naïve to GH upon entering the Genentech National Cooperative Growth Study (NCGS) for treatment. Reoperation for tumor recurrence was documented as an adverse event. Cox proportional-hazards regression models were developed for time to recurrence, using age as the outcome and enrollment date as the predictor. Patients without recurrence were treated as censored. Multivariate logistic regression was used to examine the incidence of recurrence with adjustment for the amount of time at risk. RESULTS Fifty recurrences in these 739 surgically treated patients were recorded. The overall craniopharyngioma recurrence rate in the NCGS was 6.8%, with a median follow-up time of 4.3 years (range 0.7-6.4 years.). Age at the time of study enrollment was statistically significant according to both Cox (p = 0.0032) and logistic (p craniopharyngioma after surgery in children, but long-term follow-up of GH-treated patients is required to establish a true natural history in the GH treatment era.

Study on Biodiesel plants growth performance and tolerance to ...

African Journals Online (AJOL)

Abstract. In this research, we studied the growth performance and tolerance of three biodiesel plants namely; Jatropha curcas, Moringa oleifera and Ricinus communis to water stress. Research conducted on the three different soils from Kaita, Jibiya and Mai'adua in the semi-desert environments of Katsina State, Nigeria.

Population growth and economic growth.

Science.gov (United States)

Narayana, D L

1984-01-01

This discussion of the issues relating to the problem posed by population explosion in the developing countries and economic growth in the contemporary world covers the following: predictions of economic and social trends; the Malthusian theory of population; the classical or stationary theory of population; the medical triage model; ecological disaster; the Global 2000 study; the limits to growth; critiques of the Limits to Growth model; nonrenewable resources; food and agriculture; population explosion and stabilization; space and ocean colonization; and the limits perspective. The Limits to Growth model, a general equilibrium anti-growth model, is the gloomiest economic model ever constructed. None of the doomsday models, the Malthusian theory, the classical stationary state, the neo-Malthusian medical triage model, the Global 2000 study, are so far reaching in their consequences. The course of events that followed the publication of the "Limits to Growth" in 1972 in the form of 2 oil shocks, food shock, pollution shock, and price shock seemed to bear out formally the gloomy predictions of the thesis with a remarkable speed. The 12 years of economic experience and the knowledge of resource trends postulate that even if the economic pressures visualized by the model are at work they are neither far reaching nor so drastic. Appropriate action can solve them. There are several limitations to the Limits to Growth model. The central theme of the model, which is overshoot and collapse, is unlikely to be the course of events. The model is too aggregative to be realistic. It exaggerates the ecological disaster arising out of the exponential growth of population and industry. The gross underestimation of renewable resources is a basic flaw of the model. The most critical weakness of the model is its gross underestimation of the historical trend of technological progress and the technological possiblities within industry and agriculture. The model does correctly emphasize

Maternal determinants of intrauterine growth restriction in Goa, India: a case-control study

Directory of Open Access Journals (Sweden)

DD Motghare

2014-01-01

Full Text Available Objective: To study the maternal determinants of intrauterine growth restriction. Methods: A case-control study was conducted at a tertiary care Hospital in the year 2009. Ninety eight cases of intrauterine growth restriction were compared to 98 controls, matched for newborns sex and type of delivery. Data was collected by interviewing the mother using a structured pretested schedule and perusal of antenatal records. Intrauterine growth restriction was defined as occurring if birth weight of the newborn is below 10th percentile for gestational age on the intrauterine growth curve. Data was analyzed using SPSS software version 17 package. Percentages, odds ratios with 95% CI and multiple logistic regression analysis were used wherever appropriate. Results: Maternal age, education, socioeconomic status and number of antenatal visits were found to be the significant socio-demographic factors associated with Intrauterine growth restriction while, maternal height, parity, previous spontaneous abortion, direct obstetric morbidity, indirect obstetric morbidity and anemia were the maternal biological factors found to be significantly associated on bivariate analysis. Multiple logistic regression analysis identified parity, previous spontaneous abortion, direct obstetric morbidity, indirect obstetric morbidity and antenatal visits as significant maternal determinants of intrauterine growth restriction. Conclusions: A focus on good antenatal care, especially on high risk pregnancies would go a long way in reducing the problem of intrauterine growth restriction in the community thereby ensuring a safe and healthy future for our youngest generation.

Preliminary studies of plasma growth hormone releasing activity during medical therapy of acromegaly

International Nuclear Information System (INIS)

Hagen, T.C.; Lawrence, A.M.; Kirsteins, L.

1978-01-01

The in vitro growth hormone releasing activity of plasma obtained from six acromegalic subjects was measured before and during therapy. In five subjects, plasmas were obtained before and during successful medical therapy with medroxyprogesterone acetate (MPA). The sixth subject was sampled before and after transphenoidal Sr 90 -induced hypopituitarism. All subjects had a decrement in fasting growth hormone levels with respective therapies (29-88%). The in vitro growth hormone released from Rhesus monkey anterior pituitaries was assessed after incubating one lateral half in control plasma (pre-therapy) and the contralateral pituitary half in plasma obtained during or after therapy. Studies with plasmas obtained from the five patients successfully treated with MPA showed a decrease in growth hormone releasing activity during therapy in all (18-57%). Plasma obtained after Sr 90 pituitary ablation in the sixth subject had 35% more growth hormone releasing activity than obtained before therapy. These results suggest that active acromegalics who respond to MPA with significantly lowered growth hormone levels may actually achieve this response because of a decrease in growth hormone releasing factor measured peripherally. The opposite response in one acromegalic subject, following Sr 90 pituitary ablation and hypopituitarism, suggests that growth hormone releasing factor secretion may increase when growth hormone levels are lowered by ablative therapy. (orig.) [de

Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

International Nuclear Information System (INIS)

Ito, T; Akiyama, T; Nakamura, K

2012-01-01

Reconstruction, adsorption and incorporation on various GaN surfaces are systematically investigated using an ab initio-based approach that predicts the surface phase diagram as functions of temperature and beam-equivalent pressure (BEP). The calculated results for GaN surface reconstructions with polar (0 0 0 1), nonpolar (1 1 −2 0), semipolar (1 −1 0 1) and semipolar (1 1 −2 2) orientations imply that reconstructions on GaN surfaces with Ga adlayers generally appear on the polar and the semipolar surfaces, while the stable ideal surface without Ga adsorption is found on the nonpolar GaN(1 1 −2 0) surface because it satisfies the electron counting rule. The hydrogen adsorption on GaN(0 0 0 1) and GaN(1 1 −2 0) realizes several surface structures forming N–H and Ga–NH 2 bonds on their surfaces that depend on temperature and Ga BEP during metal-organic vapor-phase epitaxy (MOVPE). In contrast, the stable structures due to hydrogen adsorption on the semipolar GaN(1 −1 0 1) and GaN(1 1 −2 2) surfaces are not varied over the wide range of temperature and Ga BEP. This implies that the hydrogen adsorbed stable structures are expected to emerge on the semipolar surfaces during MOVPE regardless of the growth conditions. Furthermore, we clarify that Mg incorporation on GaN(1 −1 0 1) surfaces is enhanced by hydrogen adsorption consistent with experimental findings

The use of topical minoxidil to accelerate nail growth: a pilot study.

Science.gov (United States)

Aiempanakit, Kumpol; Geater, Alan; Limtong, Preeyachat; Nicoletti, Kathleen

2017-07-01

Linear nail growth rate is affected by various conditions, one of which is the level of blood flow. Our supposition was that topical minoxidil, which has vasodilatory properties, can increase the rate of nail growth. The aim of this study was to determine the impact of topical minoxidil on nail growth. A 5% topical minoxidil solution was applied twice daily to the fingernails of 32 participants. Two groups of 16 participants were randomly chosen. In one group, the applications were made to the right index and left ring fingernails, and, in the other, the left index and right ring fingernails. During each visit (weekly during the first month and every 2 weeks during the second month), the nail length of six fingernails (index, middle, and ring of both hands) was measured using a digital caliper. Beginning in the first week, the mean nail length of the treated nails was greater than that of nails in the untreated group with statistical significance. There were no systemic or cutaneous side effects. During the first month, the mean growth of the treated nails was 4.27 mm/month compared with 3.91 mm/month in the untreated nails (P = 0.003). These findings suggest that a 5% concentration of topical minoxidil can stimulate nail growth with increased growth beginning in the first week of application. The results may have important implications for the treatment of nail disorders; however, a comparable study involving participants with nail disorders is highly recommended. © 2017 The International Society of Dermatology.

Pain in chemotherapy-induced neuropathy--more than neuropathic?

Science.gov (United States)

Geber, Christian; Breimhorst, Markus; Burbach, Berenike; Egenolf, Christina; Baier, Bernhard; Fechir, Marcel; Koerber, Juergen; Treede, Rolf-Detlef; Vogt, Thomas; Birklein, Frank

2013-12-01

Chemotherapy-induced neuropathy (CIN) is an adverse effect of chemotherapy. Pain in CIN might comprise neuropathic and nonneuropathic (ie, musculoskeletal) pain components, which might be characterized by pain patterns, electrophysiology, and somatosensory profiling. Included were 146 patients (100 female, 46 male; aged 56 ± 0.8 years) with CIN arising from different chemotherapy regimens. Patients were characterized clinically through nerve conduction studies (NCS) and quantitative sensory testing (QST). Questionnaires for pain (McGill) and anxiety/depression (Hospital Anxiety and Depression Scale) were supplied. Patients were followed-up after 17 days. Large- (61%) and mixed- (35%) fibre neuropathies were more frequent than small-fibre neuropathy (1.4%). The 5 major chemotherapeutic regimens impacted differently on large- but not on small-fibre function and did not predict painfulness. Chronic pain associated with CIN was reported in 41.7%. Painless and painful CIN did not differ in QST profiles or electrophysiological findings, but different somatosensory patterns were found in CIN subgroups (pain at rest [RestP], n = 25; movement-associated pain [MovP], n = 15; both pain characteristics [MovP+RestP], n = 21; or no pain [NonP], n = 85): small-fibre function (cold-detection threshold, CDT: z score: -1.46 ± 0.21, P < 0.01) was most impaired in RestP; mechanical hyperalgesia was exclusively found in MovP (z score: +0.81 ± 0.30, P < 0.05). "Anxiety" discriminated between painful and painless CIN; "CDT" and "anxiety" discriminated between patients with ongoing (RestP) and movement-associated pain (MovP) or pain components (MovP+RestP). The detrimental effect of chemotherapy on large fibres failed to differentiate painful from painless CIN. Patients stratified for musculoskeletal or neuropathic pain, however, differed in psychological and somatosensory parameters. This stratification might allow for the application of a more specific therapy. Copyright © 2013

Laboratory study on influence of plant growth promoting ...

African Journals Online (AJOL)

Aghomotsegin

2015-03-06

Mar 6, 2015 ... promoting rhizobacteria (PGPR) on growth response and tolerance of Zea ... inoculating maize seeds with plant growth promoting rhizobacterial strains in a crude oil impacted medium. ..... Botany and Environmental Health.

A prospective study of fetal head growth, autistic traits and autism spectrum disorder

NARCIS (Netherlands)

L.M.E. Blanken (Laura); Dass, A. (Alena); Alvares, G. (Gail); J. van der Ende (Jan); N.K. Schoemaker (Nikita); H. El Marroun (Hanan); Hickey, M. (Martha); C.E. Pennell (Craig); White, S. (Scott); Maybery, M.T. (Murray T.); Dissanayake, C. (Cheryl); V.W.V. Jaddoe (Vincent); F.C. Verhulst (Frank); H.W. Tiemeier (Henning); McIntosh, W. (Will); T.J.H. White (Tonya); A.J.O. Whitehouse (Andrew)

2018-01-01

textabstractAltered trajectories of brain growth are often reported in Autism Spectrum Disorder (ASD), particularly during the first year of life. However, less is known about prenatal head growth trajectories, and no study has examined the relation with postnatal autistic symptom severity. The

The Impact of Government Expenditure on Economic Growth: A Study of Asian Countries

OpenAIRE

K. P. K. S. Lahirushan; W. G. V. Gunasekara

2015-01-01

Main purpose of this study is to identify the impact of government expenditure on economic growth in Asian Countries. Consequently, main objective is to analyze whether government expenditure causes economic growth in Asian countries vice versa and then scrutinizing long-run equilibrium relationship exists between them. The study completely based on secondary data. The methodology being quantitative that includes econometrical techniques of cointegration, panel fixed effe...

Empirical Study towards the Drivers of Sustainable Economic Growth in EU-28 Countries

Directory of Open Access Journals (Sweden)

Daniel Ştefan Armeanu

2017-12-01

Full Text Available This study aims at empirically investigating the drivers of sustainable economic growth in EU-28 countries. By means of panel data regression models, in the form of fixed and random effects models, alongside system generalized method of moments, we examine several drivers of real gross domestic product (GDP growth rate, as follows: higher education, business environment, infrastructure, technology, communications, and media, population lifestyle, and demographic changes. As regards higher education, the empirical results show that expenditure per student in higher education and traditional 18–22 year-old students are positively linked with sustainable economic growth, whereas science and technology graduates negatively influence real GDP growth. In terms of business environment, total expenditure on research and development and employment rates of recent graduates contributes to sustainable development, but corruption perceptions index revealed a negative association with economic growth. As well, the results provide support for a negative influence of infrastructure abreast technological measures on economic growth. Besides, we found a negative connection between old-age dependency ratio and sustainable economic growth.

Growth studies of Mytilus californianus using satellite surface temperatures and chlorophyll data for coastal Oregon

Science.gov (United States)

Price, J.; Lakshmi, V.

2013-12-01

The advancement of remote sensing technology has led to better understanding of the spatial and temporal variation in many physical and biological parameters, such as, temperature, salinity, soil moisture, vegetation cover, and community composition. This research takes a novel approach in understanding the temporal and spatial variability of mussel body growth using remotely sensed surface temperatures and chlorophyll-a concentration. Within marine rocky intertidal ecosystems, temperature and food availability influence species abundance, physiological performance, and distribution of mussel species. Current methods to determine the temperature mussel species experience range from in-situ field observations, temperature loggers, temperature models, and using other temperature variables. However, since the temperature that mussel species experience is different from the air temperature due to physical and biological characteristics (size, color, gaping, etc.), it is difficult to accurately predict the thermal stresses they experience. Methods to determine food availability (chlorophyll-a concentration used as a proxy) for mussel species are mostly done at specific study sites using water sampling. This implies that analysis of temperature and food availability across large spatial scales and long temporal scales is not a trivial task given spatial heterogeneity. However, this is an essential step in determination of the impact of changing climate on vulnerable ecosystems such as the marine rocky intertidal system. The purpose of this study was to investigate the potential of using remotely sensed surface temperatures and chlorophyll-a concentration to better understand the temporal and spatial variability of the body growth of the ecologically and economically important rocky intertidal mussel species, Mytilus californianus. Remotely sensed sea surface temperature (SST), land surface temperature (LST), intertidal surface temperature (IST), chlorophyll

studies on growth, organs weight and haematological parameters of ...

African Journals Online (AJOL)

user

2012-06-01

Jun 1, 2012 ... Maize which is the most available basal energy feedstuff is in constant demand for human and animal nutrition and for industrial processing (Esonu, 2000). The study was conducted to evaluate the effect of feeding graded level of cassava root meal flour on haematological and growth performance of broiler.

Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

Czech Academy of Sciences Publication Activity Database

Neudert, K.; Trojánek, F.; Kuldová, Karla; Oswald, Jiří; Hospodková, Alice; Malý, P.

2009-01-01

Roč. 6, č. 4 (2009), 853-856 ISSN 1862-6351 R&D Projects: GA ČR GA202/06/0718 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * photoluminescence * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Czech Academy of Sciences Publication Activity Database

Mikhailova, M. P.; Ivanov, E.V.; Moiseev, K. D.; Yakovlev, Yu. P.; Hulicius, Eduard; Hospodková, Alice; Pangrác, Jiří; Šimeček, Tomislav

2010-01-01

Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826 Institutional research plan: CEZ:AV0Z10100521 Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.603, year: 2010

Implementing atomic force microscopy (AFM) for studying kinetics of gold nanoparticle's growth

DEFF Research Database (Denmark)

Georgiev, P.; Bojinova, A.; Kostova, B.

2013-01-01

In a novel experimental approach Atomic Force Microscopy (AFM) was applied as a tool for studying the kinetics of gold nanoparticle growth. The gold nanoparticles were obtained by classical Turkevich citrate synthesis at two different temperatures. From the analysis of AFM images during...... the synthesis process the nanoparticle s' sizes were obtained. To demonstrate the applicability and the reliability of the proposed experimental approach we studied the nanoparticles growth at two different temperatures by spectrophotometric measurements and compared them with the results from AFM experimental...

GROWTH HACKING PRACTICES IN A START-UP: A CASE STUDY ON THECON.RO

Directory of Open Access Journals (Sweden)

Marius GERU

2014-06-01

Full Text Available Despite the increasing awareness of content marketing tools in the academic community, the benefits of growth hacking were highlighted especially in blog posts and several e-books. This paper examines the particular features of growth hacking techniques, which differentiates it from traditional marketing. Specifically, a content analysis was conducted to identify the experts’ opinions regarding the effective use of growth hacking techniques, to detect the specific skills that a growth hacker must gain and to compare the tools related to this concept from both inbound and outbound marketing perspective. On the other hand, we outlined the need for development of start-ups, without spending huge amounts of money in marketing. Using a case study methodology, we examined the motivations of adopting growth hacking techniques by an Internet pure player - Thecon. Results show that the effective mix of growth hacking techniques applied by this company tends to forward more online content than its competitors.

Fetal growth and risk of stillbirth: a population-based case-control study.

Science.gov (United States)

Bukowski, Radek; Hansen, Nellie I; Willinger, Marian; Reddy, Uma M; Parker, Corette B; Pinar, Halit; Silver, Robert M; Dudley, Donald J; Stoll, Barbara J; Saade, George R; Koch, Matthew A; Rowland Hogue, Carol J; Varner, Michael W; Conway, Deborah L; Coustan, Donald; Goldenberg, Robert L

2014-04-01

Stillbirth is strongly related to impaired fetal growth. However, the relationship between fetal growth and stillbirth is difficult to determine because of uncertainty in the timing of death and confounding characteristics affecting normal fetal growth. We conducted a population-based case-control study of all stillbirths and a representative sample of live births in 59 hospitals in five geographic areas in the US. Fetal growth abnormalities were categorized as small for gestational age (SGA) (90th percentile) at death (stillbirth) or delivery (live birth) using population, ultrasound, and individualized norms. Gestational age at death was determined using an algorithm that considered the time-of-death interval, postmortem examination, and reliability of the gestational age estimate. Data were weighted to account for the sampling design and differential participation rates in various subgroups. Among 527 singleton stillbirths and 1,821 singleton live births studied, stillbirth was associated with SGA based on population, ultrasound, and individualized norms (odds ratio [OR] [95% CI]: 3.0 [2.2 to 4.0]; 4.7 [3.7 to 5.9]; 4.6 [3.6 to 5.9], respectively). LGA was also associated with increased risk of stillbirth using ultrasound and individualized norms (OR [95% CI]: 3.5 [2.4 to 5.0]; 2.3 [1.7 to 3.1], respectively), but not population norms (OR [95% CI]: 0.6 [0.4 to 1.0]). The associations were stronger with more severe SGA and LGA (95th percentile). Analyses adjusted for stillbirth risk factors, subset analyses excluding potential confounders, and analyses in preterm and term pregnancies showed similar patterns of association. In this study 70% of cases and 63% of controls agreed to participate. Analysis weights accounted for differences between consenting and non-consenting women. Some of the characteristics used for individualized fetal growth estimates were missing and were replaced with reference values. However, a sensitivity analysis using individualized norms

Epidermal growth factor and insulin-like growth factor I upregulate the expression of the epidermal growth factor system in rat liver

DEFF Research Database (Denmark)

Bor, M V; Sørensen, B S; Vinter-Jensen, L

2000-01-01

BACKGROUND/AIM: Both epidermal growth factor and insulin-like growth factor I play a role in connection with the liver. In the present study, the possible interaction of these two growth factor systems was studied by investigating the effect of epidermal growth factor or insulin-like growth factor...... I treatment on the expression of the epidermal growth factor receptor, and its activating ligands, transforming growth factor-alpha and epidermal growth factor. METHODS: Fifty-five male rats received no treatment, human recombinant epidermal growth factor or human recombinant insulin-like growth.......8+/-1.6 fmol/mg protein epidermal growth factor and 144+/-22 fmol/mg protein transforming growth factor-alpha. Both epidermal growth factor and insulin-like growth factor I treatment increased the expression of mRNA for transforming growth factor-alpha and epidermal growth factor receptor, as well...

Study on Silkworm Bed Cleaning Frequency during Larval Growth ...

African Journals Online (AJOL)

Study on Silkworm Bed Cleaning Frequency during Larval Growth Period. Abiy Tilahun, Kedir Shifa, Ahmed Ibrahim, Metasebia Terefe. Abstract. No Abstract. Full Text: EMAIL FREE FULL TEXT EMAIL FREE FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT · http://dx.doi.org/10.4314/star.v4i2.5 · AJOL African ...

WHO multicentre study for the development of growth standards from fetal life to childhood: the fetal component.

Science.gov (United States)

Merialdi, Mario; Widmer, Mariana; Gülmezoglu, Ahmet Metin; Abdel-Aleem, Hany; Bega, George; Benachi, Alexandra; Carroli, Guillermo; Cecatti, Jose Guilherme; Diemert, Anke; Gonzalez, Rogelio; Hecher, Kurt; Jensen, Lisa N; Johnsen, Synnøve L; Kiserud, Torvid; Kriplani, Alka; Lumbiganon, Pisake; Tabor, Ann; Talegawkar, Sameera A; Tshefu, Antoinette; Wojdyla, Daniel; Platt, Lawrence

2014-05-02

In 2006 WHO presented the infant and child growth charts suggested for universal application. However, major determinants for perinatal outcomes and postnatal growth are laid down during antenatal development. Accordingly, monitoring fetal growth in utero by ultrasonography is important both for clinical and scientific reasons. The currently used fetal growth references are derived mainly from North American and European population and may be inappropriate for international use, given possible variances in the growth rates of fetuses from different ethnic population groups. WHO has, therefore, made it a high priority to establish charts of optimal fetal growth that can be recommended worldwide. This is a multi-national study for the development of fetal growth standards for international application by assessing fetal growth in populations of different ethnic and geographic backgrounds. The study will select pregnant women of high-middle socioeconomic status with no obvious environmental constraints on growth (adequate nutritional status, non-smoking), and normal pregnancy history with no complications likely to affect fetal growth. The study will be conducted in centres from ten developing and industrialized countries: Argentina, Brazil, Democratic Republic of Congo, Denmark, Egypt, France, Germany, India, Norway, and Thailand. At each centre, 140 pregnant women will be recruited between 8 + 0 and 12 + 6 weeks of gestation. Subsequently, visits for fetal biometry will be scheduled at 14, 18, 24, 28, 32, 36, and 40 weeks (+/- 1 week) to be performed by trained ultrasonographers.The main outcome of the proposed study will be the development of fetal growth standards (either global or population specific) for international applications. The data from this study will be incorporated into obstetric practice and national health policies at country level in coordination with the activities presently conducted by WHO to implement the use of the Child Growth Standards.

Development of White-Light Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting

Energy Technology Data Exchange (ETDEWEB)

Jan Talbot; Kailash Mishra

2007-12-31

This report provides a summary of research activities carried out at the University of California, San Diego and Central Research of OSRAM SYLVANIA in Beverly, MA partially supported by a research contract from US Department of Energy, DE-FC26-04NT422274. The main objective of this project was to develop III-V nitrides activated by rare earth ions, RE{sup 3+}, which could eliminate the need for phosphors in nitride-based solid state light sources. The main idea was to convert electron-hole pairs injected into the active layer in a LED die to white light directly through transitions within the energy levels of the 4f{sup n}-manifold of RE{sup 3+}. We focused on the following materials: Eu{sup 3+}(red), Tb{sup 3+}(green), Er{sup 3+}(green), Dy{sup 3+}(yellow) and Tm{sup 3+}(blue) in AlN, GaN and alloys of AlN and GaN. Our strategy was to explore candidate materials in powder form first, and then study their behavior in thin films. Thin films of these materials were to be deposited on sapphire substrates using pulsed laser deposition (PLD) and metal organic vapor phase epitaxy (MOVPE). The photo- and cathode-luminescence measurements of these materials were used to investigate their suitability for white light generation. The project proceeded along this route with minor modifications needed to produce better materials and to expedite our progress towards the final goal. The project made the following accomplishments: (1) red emission from Eu{sup 3+}, green from Tb{sup 3+}, yellow from Dy{sup 3+} and blue from Tm{sup 3+} in AlN powders; (2) red emission from Eu{sup 3+} and green emission from Tb{sup 3+} in GaN powder; (3) red emission from Eu{sup 3+} in alloys of GaN and AlN; (4) green emission from Tb{sup 3+} in GaN thin films by PLD; (5) red emission from Eu{sup 3+} and Tb{sup 3+} in GaN thin films deposited by MOVPE; (6) energy transfer from host to RE{sup 3+}; (7) energy transfer from Tb{sup 3+} to Eu{sup 3+} in AlN powders; (8) emission from AlN powder samples

A descriptive study on selected growth parameters and growth hormone receptor gene in healthy young adults from the American Midwest.

Science.gov (United States)

Hartin, Samantha N; Hossain, Waheeda A; Manzardo, Ann M; Brown, Shaquanna; Fite, Paula J; Bortolato, Marco; Butler, Merlin G

2018-02-12

The first study of growth hormone receptor (GHR) genotypes in healthy young adults in the United States attending a Midwestern university and impact on selected growth parameters. To describe the frequency of GHR genotypes in a sample of healthy young adults from the United States attending a university in the Midwest and analyze the relationship between GHR genotypes and selected growth parameters. Saliva was collected from 459 healthy young adults (237 females, 222 males; age range = 18-25 y) and DNA isolated for genotyping of GHR alleles (fl/fl, fl/d3, or d3/d3). Selected growth parameters were collected and GHR genotype data examined for previously reported associations (e.g., height, weight or bone mass density) or novel findings (e.g., % body water and index finger length). We found 219 participants (48%) homozygous for fl/fl, 203 (44%), heterozygous fl/d3 and 37 (8%) homozygous d3/d3. The distribution of GHR genotypes in our participants was consistent with previous reports of non-US populations. Several anthropometric measures differed by sex. The distribution of GHR genotypes did not significantly differ by sex, weight, or other anthropometric measures. However, the fl/d3 genotype was more common among African-Americans. Our study of growth and anthropometric parameters in relationship to GHR genotypes found no association with height, weight, right index finger length, BMI, bone mass density, % body fat or % body water in healthy young adults. We did identify sex differences with increased body fat, decreased bone density, body water and index finger length in females. Copyright © 2018 Elsevier Ltd. All rights reserved.

Growth throughout childhood of children born growth restricted

NARCIS (Netherlands)

Beukers, Fenny; Rotteveel, Joost; van Weissenbruch, Mirjam M.; Ganzevoort, Wessel; van Goudoever, Johannes B.; van Wassenaer-Leemhuis, Aleid G.

2017-01-01

Many studies that examine growth in growth-restricted children at birth do not discriminate between fetal growth restriction (FGR) and small for gestational age (SGA). These terms however are not synonymous. In SGA, stunting and increased weight gain have been reported. We do not know if this holds

Characterisation of InAs-based epilayers by FTIR spectroscopy

CSIR Research Space (South Africa)

Baisitse, TR

2008-01-01

Full Text Available In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs...

Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

International Nuclear Information System (INIS)

Fuhrmann, D.; Rossow, U.; Netzel, C.; Bremers, H.; Hangleiter, A.; Ade, G.; Hinze, P.

2006-01-01

Ga x In 1-x N/GaN single quantum well (QW) structures emitting in the range of 450 nm to 620 nm have been grown by MOVPE. Temperature and excitation power dependent photoluminescence (PL) was used to determine the internal quantum efficiency (IQE) for these structures. For the blue emitting QWs high IQE values on the order of 60% were achieved. Due to a reduced growth temperature, reduced growth rate and increased V/III ratio we obtained QWs with good morphology and high In content above 25%. Thinner QWs with high In content showed a clear improvement of IQE compared to QW-structures with larger thickness but smaller In-content emitting at the same wavelength. Between λ peak =460 nm and 530 nm we observed a slight reduction in IQE with values of 58% at 490 nm and 40% at 525 nm. But towards λ peak =620 nm IQE decreased due to the electric field induced separation of the electron and hole wavefunction down to 1%. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High temperature refractive indices of GaN

Energy Technology Data Exchange (ETDEWEB)

Liu, C.; Stepanov, S.; Gott, A.; Shields, P.A.; Zhirnov, E.; Wang, W.N. [Department of Physics, University of Bath, Bath, BA2 7AY (United Kingdom); Steimetz, E.; Zettler, J.T. [LayTec, Helmholtzstr. 13-14, 10587 Berlin (Germany)

2006-06-15

Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 C were obtained in a spectral range from 370-900 nm. A peak at 412{+-}5 nm in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Occupational exposure to chemicals and fetal growth: the Generation R Study.

NARCIS (Netherlands)

Snijder, C.A.; Roeleveld, N.; Velde, E. te; Steegers, E.A.P.; Raat, H.; Hofman, A.; Jaddoe, V.W.; Burdorf, A.

2012-01-01

BACKGROUND: Developmental diseases, such as birth defects, growth restriction and preterm delivery, account for >25% of infant mortality and morbidity. Several studies have shown that exposure to chemicals during pregnancy is associated with adverse birth outcomes. The aim of this study was to

Occupational exposure to chemicals and fetal growth: The Generation R Study

NARCIS (Netherlands)

C.A. Snijder (Claudia); N. Roeleveld (Nel); E.R. te Velde (Egbert); E.A.P. Steegers (Eric); H. Raat (Hein); A. Hofman (Albert); V.W.V. Jaddoe (Vincent); A. Burdorf (Alex)

2012-01-01

textabstractBackground Developmental diseases, such as birth defects, growth restriction and preterm delivery, account for >25 of infant mortality and morbidity. Several studies have shown that exposure to chemicals during pregnancy is associated with adverse birth outcomes. The aim of this study

Screening rules for growth to detect celiac disease : A case-control simulation study

NARCIS (Netherlands)

Dommelen, P. van; Grote, F.K.; Oostdijk, W.; Muinck Keizer de; Schrama, S.M.P.F.; Boersma, B.; Damen, G.M.; Csizmadia, C.G.; Verkerk, P.H.; Wit, J.M.; Buuren, S. van

2008-01-01

Background: It is generally assumed that most patients with celiac disease (CD) have a slowed growth in terms of length (or height) and weight. However, the effectiveness of slowed growth as a tool for identifying children with CD is unknown. Our aim is to study the diagnostic efficiency of several

The contribution of public capital towards economic growth: A KwaZulu-Natal case study

Directory of Open Access Journals (Sweden)

Clive E. Coetzee

2017-04-01

Aim: The way provincial or regional growth depends on infrastructure is investigated in this article and it is applied to data from KwaZulu-Natal province, as an illustration. Setting: This study investigates the extent to which infrastructure in KwaZulu-Natal province in South Africa leads towards economic growth of the province. Methods: From a theoretical framework, this article develops an endogenous growth model, which investigates the association between provincial public capital stock expenditure and economic growth. Data series for public capital formation are first developed to apply in this study and others to follow. Econometric techniques are then employed, using quarterly data between 2001 and 2015, to assess the set hypothesis that growth in expenditure on public capital leads to national economic growth. Results: The empirical results support the argument of a positive relationship between provincial capital stock and economic growth in the long-term. The findings also suggests that the long-term causality or effect fades over time, albeit slowly. Conclusion: The nature and statistical significance of the long-term equilibrium relationship seems to be ambiguous at best. Some evidence of an equilibrium relationship in the short-term was, however, also observed. In conclusion, there also seems to be some causality between provincial capital stock and provincial gross domestic product in the short-run.

A Biostereometric Approach To The Study Of Infants' And Children's Body Growth

Science.gov (United States)

Coblentz, A.; Ignazi, G.

1980-07-01

Studies on the somatic growth of young children have traditionally been made using conventional anthropometry techniques. As a result, while the conditions of growth of morphological variables such as weight or segmental dimensions are well known, the same cannot be said of the more global aspect of the development of the body in a three-dimensional reference space. Yet body volumes and surfaces represent morphological characteristics which are just as necessary for a good understanding of physiological phenomena (thermoregulation, energy balance, etc.) as the conventional linear data. In the volume of their research on children's growth in recent years, the authors have found that in none of the studies mentioned in the literature was consideration given to the dynamic aspect of the child's somatic development in a three-dimensional space. A primary reason for such omission is largely to be found in the technical difficulties encountered in the measure-ment of somatic characteristics such as body volume and surface. Yet, among the several possible methods of study, biostereometry and particularly the photogrammetric tool, is certainly one of the most rewarding. This being so, the authors propose to use the photogrammetric technique to undertake, in a first stage, a methodological study that will draw up, on a limited sample of infants and young children, the development chart, over a period of time, of the surfaces and volumes of segmental elements. Thus will be checked the relationships between the growth rates of different characteristics : surfaces, volumes, weight, linear dimensions. Quite apart from the intrinsic value of such studies, the data thus collected will eventually provide practitioners, pediatricians and physiologists with the reference records that have so far been lacking.

Does health promote economic growth? Portuguese case study: from dictatorship to full democracy.

Science.gov (United States)

Morgado, Sónia Maria Aniceto

2014-07-01

This paper revisits the debate on health and economic growth (Deaton in J Econ Lit 51:113-158, 2003) focusing on the Portuguese case by testing the relationship between growth and health. We test Portuguese insights, using time series data from 1960 to 2005, taking into account different variables (life expectancy, labour, capital, infant mortality) and considering the years that included major events on the political scene, such as the dictatorship and a closed economy (1960-1974), a revolution (1974) and full democracy and an open economy (1975-2005), factors that influence major economic, cultural, social and politic indicators. Therefore the analysis is carried out adopting Lucas' (J Monet Econ 22(1):3-42, 1988) endogenous growth model that considers human capital as one factor of production, it adopts a VAR (vector autoregressive) model to test the causality between growth and health. Estimates based on the VAR seem to confirm that economic growth influences the health process, but health does not promote growth, during the period under study.

Land Cover Change and Remote Sensing in the Classroom: An Exercise to Study Urban Growth

Science.gov (United States)

Delahunty, Tina; Lewis-Gonzales, Sarah; Phelps, Jack; Sawicki, Ben; Roberts, Charles; Carpenter, Penny

2012-01-01

The processes and implications of urban growth are studied in a variety of disciplines as urban growth affects both the physical and human landscape. Remote sensing methods provide ways to visualize and mathematically represent urban growth; and resultant land cover change data enable both quantitative and qualitative analysis. This article helps…

Overview of TANGENT (Tandem Aerosol Nucleation and Growth ENvironment Tube) 2017 IOP Study

Science.gov (United States)

Tiszenkel, L.

2017-12-01

New particle formation consists of two steps: nucleation and growth of nucleated particles. However, most laboratory studies have been conducted under conditions where these two processes are convoluted together, thereby hampering the detailed understanding of the effect of chemical species and atmospheric conditions on two processes. The objective of the Tandem Aerosol Nucleation and Growth ENvironment Tube (TANGENT) laboratory study is to investigate aerosol nucleation and growth properties independently by separating these two processes in two different flow tubes. This research is a collaboration between the University of Alabama in Huntsville and the University of Delaware. In this poster we will present the experimental setup of TANGENT and summarize the key results from the first IOP (intense observation period) experiments undertaken during Summer 2017. Nucleation takes place in a temperature- and RH-controlled fast flow reactor (FT-1) where sulfuric acid forms from OH radicals and sulfur dioxide. Sulfuric acid and impurity base compounds are detected with chemical ionization mass spectrometers (CIMS). Particle sizes and number concentrations of newly nucleated particles are measured with a scanning mobility particle sizer (SMPS) and particle size magnifier (PSM), providing concentrations of particles between 1-100 nm. The nucleation particles are transferred directly to the growth tube (FT-2) where oxidants and biogenic organic precursors are added to grow nucleated nanoparticles. Sizes of particles after growth are analyzed with an additional SMPS and elemental chemical composition of 50 nm and above particles detected with a nano-aerosol mass spectrometer (NAMS). TANGENT provides the unique ability to conduct experiments that can monitor and control reactant concentrations, aerosol size and aerosol chemical composition during nucleation and growth. Experiments during this first IOP study have elucidated the effects of sulfur dioxide, particle size

Mechanisms for catalytic carbon nanofiber growth studied by ab initio density functional theory calculations

DEFF Research Database (Denmark)

Abild-Pedersen, Frank; Nørskov, Jens Kehlet; Rostrup-Nielsen, Jens

2006-01-01

Mechanisms and energetics of graphene growth catalyzed by nickel nanoclusters were studied using ab initio density functional theory calculations. It is demonstrated that nickel step-edge sites act as the preferential growth centers for graphene layers on the nickel surface. Carbon is transported......, and it is argued how these processes may lead to different nanofiber structures. The proposed growth model is found to be in good agreement with previous findings....

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Directory of Open Access Journals (Sweden)

Sangmo Koo

2016-09-01

Full Text Available The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100 and (110 orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D structure.

The study of thin film growth by using Monte Carlo method

International Nuclear Information System (INIS)

Tandogan, M.; Aktas, S.

2010-01-01

Thin film growth was studied by using Monte Carlo simulation method. Three basic models were used in this study. Model A, the gas particles used for the formation of film were under no external effects until they stick on the surface or to another particle which already stickled on the surface to form the film. Model B, gases were drifted towards the surface by an external agent. Model C, where the gas particles in the closed container were always distributed uniformly throughout the container while they are in gas state. The simulations revealed the fact that for an ideal thin film growth Model C gave the best result to prepare a thin film while a thicker but a better quality could be obtained by Model B.

Growth and Raman spectroscopy studies of gold-free catalyzed semiconductor nanowires

Energy Technology Data Exchange (ETDEWEB)

Zardo, Ilaria

2010-12-15

The present Ph.D. thesis proposes two aims: the search for catalysts alternative to gold for the growth of silicon nanowires and the investigation of the structural properties of the gold-free catalyzed Si, Ge, and GaAs nanowires. The successful growth of gold free catalyzed silicon nanowires was obtained using Ga and In as catalyst. Hydrogen plasma conditions were needed during the growth process. We proposed a growth mechanism where the role of the hydrogen plasma is taken into account. The influence of the growth conditions on nanowire growth morphology and structural properties was investigated in detail. The TEM studies showed the occurrence of different kind of twin defects depending on the nanowire growth direction. The intersection of twins in different spatial directions in <111>-oriented nanowires or the periodicity of highly dense twins in <112>-oriented nanowires leads to the formation of hexagonal domains embedded in the diamond silicon structure. A simple crystallographic model which illustrates the formation of the hexagonal phase was proposed. The presence of the hexagonal domains embedded in the diamond silicon structure was investigated also by means of Raman spectroscopy. The measured frequencies of the E2g and A1g modes were found to be in agreement with frequencies expected from phonon dispersion folding. An estimation of the percentage of hexagonal structure with respect to the cubic structure was given. The relative percentage of the two structures was found to change with growth temperature. Spatially resolved Raman scattering experiments were also realized on single Si nanowires. The lattice dynamics of gold-free catalyzed Ge and GaAs nanowires was studied by means of Raman spectroscopy. We performed spatially resolved Raman spectroscopy experiments on single crystalline- amorphous core-shell Ge nanowires. The correlation with TEM studies on nanowires grown under the same conditions and with AFM measurements realized of the same nanowires

Modeling Math Growth Trajectory--An Application of Conventional Growth Curve Model and Growth Mixture Model to ECLS K-5 Data

Science.gov (United States)

Lu, Yi

2016-01-01

To model students' math growth trajectory, three conventional growth curve models and three growth mixture models are applied to the Early Childhood Longitudinal Study Kindergarten-Fifth grade (ECLS K-5) dataset in this study. The results of conventional growth curve model show gender differences on math IRT scores. When holding socio-economic…

A Comparative Study of Ethylene Growth Response Kinetics in Eudicots and Monocots Reveals a Role for Gibberellin in Growth Inhibition and Recovery1[W][OA

Science.gov (United States)

Kim, Joonyup; Wilson, Rebecca L.; Case, J. Brett; Binder, Brad M.

2012-01-01

Time-lapse imaging of dark-grown Arabidopsis (Arabidopsis thaliana) hypocotyls has revealed new aspects about ethylene signaling. This study expands upon these results by examining ethylene growth response kinetics of seedlings of several plant species. Although the response kinetics varied between the eudicots studied, all had prolonged growth inhibition for as long as ethylene was present. In contrast, with continued application of ethylene, white millet (Panicum miliaceum) seedlings had a rapid and transient growth inhibition response, rice (Oryza sativa ‘Nipponbare’) seedlings had a slow onset of growth stimulation, and barley (Hordeum vulgare) had a transient growth inhibition response followed, after a delay, by a prolonged inhibition response. Growth stimulation in rice correlated with a decrease in the levels of rice ETHYLENE INSENSTIVE3-LIKE2 (OsEIL2) and an increase in rice F-BOX DOMAIN AND LRR CONTAINING PROTEIN7 transcripts. The gibberellin (GA) biosynthesis inhibitor paclobutrazol caused millet seedlings to have a prolonged growth inhibition response when ethylene was applied. A transient ethylene growth inhibition response has previously been reported for Arabidopsis ethylene insensitive3-1 (ein3-1) eil1-1 double mutants. Paclobutrazol caused these mutants to have a prolonged response to ethylene, whereas constitutive GA signaling in this background eliminated ethylene responses. Sensitivity to paclobutrazol inversely correlated with the levels of EIN3 in Arabidopsis. Wild-type Arabidopsis seedlings treated with paclobutrazol and mutants deficient in GA levels or signaling had a delayed growth recovery after ethylene removal. It is interesting to note that ethylene caused alterations in gene expression that are predicted to increase GA levels in the ein3-1 eil1-1 seedlings. These results indicate that ethylene affects GA levels leading to modulation of ethylene growth inhibition kinetics. PMID:22977279

[Linear growth retardation in children under five years of age: a baseline study].

Science.gov (United States)

Rissin, Anete; Figueiroa, José Natal; Benício, Maria Helena D'Aquino; Batista Filho, Malaquias

2011-10-01

The scope of this study was to describe the prevalence of, and analyze factors associated with, linear growth retardation in children. The baseline study analyzed 2040 children under the age of five, establishing a possible association between growth delay (height/age index non-binary variables, there was a positive association with roof type and number of inhabitants per room and a negative association with income per capita, mother's schooling and birth weight. The adjusted analysis also indicated water supply, visit from the community health agent, birth delivery location, internment for diarrhea, or for pneumonia and birth weight as significant variables. Several risk factors were identified for linear growth retardation pointing to the multi-causal aspects of the problem and highlighting the need for control measures by the various hierarchical government agents.

Cervical vertebral maturation method and mandibular growth peak: a longitudinal study of diagnostic reliability.

Science.gov (United States)

Perinetti, Giuseppe; Primozic, Jasmina; Sharma, Bhavna; Cioffi, Iacopo; Contardo, Luca

2018-03-28

The capability of the cervical vertebral maturation (CVM) method in the identification of the mandibular growth peak on an individual basis remains undetermined. The diagnostic reliability of the six-stage CVM method in the identification of the mandibular growth peak was thus investigated. From the files of the Oregon and Burlington Growth Studies (data obtained between early 1950s and middle 1970s), 50 subjects (26 females, 24 males) with at least seven annual lateral cephalograms taken from 9 to 16 years were identified. Cervical vertebral maturation was assessed according to the CVM code staging system, and mandibular growth was defined as annual increments in Co-Gn distance. A diagnostic reliability analysis was carried out to establish the capability of the circumpubertal CVM stages 2, 3, and 4 in the identification of the imminent mandibular growth peak. Variable durations of each of the CVM stages 2, 3, and 4 were seen. The overall diagnostic accuracy values for the CVM stages 2, 3, and 4 were 0.70, 0.76, and 0.77, respectively. These low values appeared to be due to false positive cases. Secular trends in conjunction with the use of a discrete staging system. In most of the Burlington Growth Study sample, the lateral head film at age 15 was missing. None of the CVM stages 2, 3, and 4 reached a satisfactorily diagnostic reliability in the identification of imminent mandibular growth peak.

Fatigue crack growth in an aluminum alloy-fractographic study

Science.gov (United States)

Salam, I.; Muhammad, W.; Ejaz, N.

2016-08-01

A two-fold approach was adopted to understand the fatigue crack growth process in an Aluminum alloy; fatigue crack growth test of samples and analysis of fractured surfaces. Fatigue crack growth tests were conducted on middle tension M(T) samples prepared from an Aluminum alloy cylinder. The tests were conducted under constant amplitude loading at R ratio 0.1. The stress applied was from 20,30 and 40 per cent of the yield stress of the material. The fatigue crack growth data was recorded. After fatigue testing, the samples were subjected to detailed scanning electron microscopic (SEM) analysis. The resulting fracture surfaces were subjected to qualitative and quantitative fractographic examinations. Quantitative fracture analysis included an estimation of crack growth rate (CGR) in different regions. The effect of the microstructural features on fatigue crack growth was examined. It was observed that in stage II (crack growth region), the failure mode changes from intergranular to transgranular as the stress level increases. In the region of intergranular failure the localized brittle failure was observed and fatigue striations are difficult to reveal. However, in the region of transgranular failure the crack path is independent of the microstructural features. In this region, localized ductile failure mode was observed and well defined fatigue striations were present in the wake of fatigue crack. The effect of interaction of growing fatigue crack with microstructural features was not substantial. The final fracture (stage III) was ductile in all the cases.

A controlled study on serum insulin-like growth factor-I and urinary excretion of growth hormone in fibromyalgia

DEFF Research Database (Denmark)

Jacobsen, S; Main, K; Danneskiold-Samsøe, B

1995-01-01

It has been hypothesized that secretory deficiencies of growth hormone may play a pathophysiological role in fibromyalgia (FM). Our objective was thus to evaluate the secretion of growth hormone in FM.......It has been hypothesized that secretory deficiencies of growth hormone may play a pathophysiological role in fibromyalgia (FM). Our objective was thus to evaluate the secretion of growth hormone in FM....

Physical growth, puberty and hormones in adolescents with Nodding Syndrome; a pilot study.

Science.gov (United States)

Piloya-Were, Theresa; Odongkara-Mpora, Beatrice; Namusoke, Hanifa; Idro, Richard

2014-11-28

Nodding syndrome is an epidemic symptomatic generalized epilepsy syndrome of unknown cause in Eastern Africa. Some patients have extreme short stature. We hypothesized that growth failure in nodding syndrome is associated with specific endocrine dysfunctions. In this pilot study, we examined the relationship between serum hormone levels and stature, bone age and sexual development. We recruited ten consecutive children, 13 years or older, with World Health Organization defined nodding syndrome and assessed physical growth, bone age, development of secondary sexual characteristics and serum hormone levels. Two children with incomplete results were excluded. Of the eight remaining, two had severe stunting (height for age Z [HAZ] scorebone age was delayed by a median 3(range 0-4) years. Serum growth hormone levels were normal in all eight but the two patients with severe stunting and one with moderate stunting had low levels of Somatomedin C (Insulin like Growth Factor [IGF1]) and/or IGF binding protein 3 (IGFBP3), mediators of growth hormone function. A linear relationship was observed between serum IGF1 level and HAZ score. With the exception of one child, all were either pre-pubertal or in early puberty (Tanner stages 1 and 2) and in the seven, levels of the gonadotrophins (luteinising and follicle stimulating hormone) and the sex hormones (testosterone/oestrogen) were all within pre-pubertal ranges or ranges of early puberty. Thyroid function, prolactin, adrenal, and parathyroid hormone levels were all normal. Patients with nodding syndrome may have dysfunctions in the pituitary growth hormone and pituitary gonadal axes that manifest as stunted growth, delayed bone age and puberty. Studies are required to determine if such endocrine dysfunction is a primary manifestation of the disease or a secondary consequence of chronic ill health and malnutrition and if so, whether targeted interventions can improve outcome.

Insulin-Like Growth Factor-Independent Effects of Growth Hormone on Growth Plate Chondrogenesis and Longitudinal Bone Growth.

Science.gov (United States)

Wu, Shufang; Yang, Wei; De Luca, Francesco

2015-07-01

GH stimulates growth plate chondrogenesis and longitudinal bone growth directly at the growth plate. However, it is not clear yet whether these effects are entirely mediated by the local expression and action of IGF-1 and IGF-2. To determine whether GH has any IGF-independent growth-promoting effects, we generated (TamCart)Igf1r(flox/flox) mice. The systemic injection of tamoxifen in these mice postnatally resulted in the excision of the IGF-1 receptor (Igf1r) gene exclusively in the growth plate. (TamCart)Igf1r(flox/flox) tamoxifen-treated mice [knockout (KO) mice] and their Igf1r(flox/flox) control littermates (C mice) were injected for 4 weeks with GH. At the end of the 4-week period, the tibial growth and growth plate height of GH-treated KO mice were greater than those of untreated C or untreated KO mice. The systemic injection of GH increased the phosphorylation of Janus kinase 2 and signal transducer and activator of transcription 5B in the tibial growth plate of the C and KO mice. In addition, GH increased the mRNA expression of bone morphogenetic protein-2 and the mRNA expression and protein phosphorylation of nuclear factor-κB p65 in both C and KO mice. In cultured chondrocytes transfected with Igf1r small interfering RNA, the addition of GH in the culture medium significantly induced thymidine incorporation and collagen X mRNA expression. In conclusion, our findings demonstrate that GH can promote growth plate chondrogenesis and longitudinal bone growth directly at the growth plate, even when the local effects of IGF-1 and IGF-2 are prevented. Further studies are warranted to elucidate the intracellular molecular mechanisms mediating the IGF-independent, growth-promoting GH effects.

Studies of emittance growth in the ATF

International Nuclear Information System (INIS)

Zimmermann, F.

1997-03-01

Several different mechanisms of emittance growth in the Accelerator Test Facility (ATF) at KEK are investigated: the author calculates rise times of the fast beam-ion instability for the damping ring (DR), and discusses the emittance growth caused by coherent synchrotron radiation in the beam-transport line (BT), the effect of quadrupole wake fields in the injector linac, and, finally, a single-bunch head-tail ion effect that can occur in both the DR and the BT. A first attempt to measure the quadrupole wake on the real machine is also reported

The value of repeating studies and multiple controls: replicated 28-day growth studies of rainbow trout exposed to clofibric acid.

Science.gov (United States)

Owen, Stewart F; Huggett, Duane B; Hutchinson, Thomas H; Hetheridge, Malcolm J; McCormack, Paul; Kinter, Lewis B; Ericson, Jon F; Constantine, Lisa A; Sumpter, John P

2010-12-01

Two studies to examine the effect of waterborne clofibric acid (CA) on growth-rate and condition of rainbow trout were conducted using accepted regulatory tests (Organisation for Economic Co-operation and Development [OECD] 215). The first study (in 2005) showed significant reductions after 21 d of exposure (21-d growth lowest-observed-effect concentration [LOEC] = 0.1 µg/L, 21-d condition LOEC = 0.1 µg/L) that continued to 28 d. Growth rate was reduced by approximately 50% (from 5.27 to 2.67% per day), while the condition of the fish reduced in a concentration-dependant manner. Additionally, in a concentration-dependent manner, significant changes in relative liver size were observed, such that increasing concentrations of CA resulted in smaller livers after 28-d exposure. A no-observed-effect concentration (NOEC) was not achieved in the 2005 study. An expanded second study (in 2006) that included a robust bridge to the 2005 study, with four replicate tanks of eight individual fish per concentration, did not repeat the 2005 findings. In the 2006 study, no significant effect on growth rate, condition, or liver biometry was observed after 21 or 28 d (28-d growth NOEC = 10 µg/L, 28-d condition NOEC = 10 µg/L), contrary to the 2005 findings. We do not dismiss either of these findings and suggest both are relevant and stand for comparison. However, the larger 2006 study carries more statistical power and multiple-tank replication, so probably produced the more robust findings. Despite sufficient statistical power in each study, interpretation of these and similar studies should be conducted with caution, because much significance is placed on the role of limited numbers of individual and tank replicates and the influence of control animals. Copyright © 2010 SETAC.

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

International Nuclear Information System (INIS)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

2012-01-01

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

2012-01-15

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Highly doped InP as a low loss plasmonic material for mid-IR region.

Science.gov (United States)

Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

2016-12-12

We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

Preliminary study : Extremely low frequency electromagnetic field (ELF EMF) effects on the growth of plant

International Nuclear Information System (INIS)

Roha Tukimin; Wan Norsuhaila Wan Aziz; Rozaimah Abd Rahim; Wan Saffiey Wan Abdulah

2010-01-01

A research has been done to study the effects of magnetic fields on the growth of plants.Two samples of maize seedlings and green beans have been studied. Helmholtz coil systems were used as magnetic field source at frequency 50 Hz with 440 mGauss field strength. Sample characteristics such height, leaf, colour and length of roots were observed. The results show that the magnetic field influenced the growth of the sample. The sample that were exposed to the magnetic field show faster growth compared to the controlled sample. (author)

A Comparative Study of Growth Patterns in Crested Langurs and Vervet Monkeys

Directory of Open Access Journals (Sweden)

Debra R. Bolter

2011-01-01

Full Text Available The physical growth patterns of crested langurs and vervet monkeys are investigated for several unilinear dimensions. Long bone lengths, trunk height, foot length, epiphyseal fusion of the long bones and the pelvis, and cranial capacity are compared through six dental growth stages in male Trachypithecus cristatus (crested langurs and Cercopithecus aethiops (vervet monkeys. Results show that the body elements of crested langurs mature differently than those of vervets. In some dimensions, langurs and vervets grow comparably, in others vervets attain adult values in advance of crested langurs, and in one feature the langurs are accelerated. Several factors may explain this difference, including phylogeny, diet, ecology, and locomotion. This study proposes that locomotor requirements affect differences in somatic growth between the species.

Acridine orange as an alternative to optical density to study growth kinetics of Lactobacillus bulgaricus ATCC 7517.

Science.gov (United States)

Pak, Dolar; Koo, Ok Kyung; Story, Robert S; O'Bryan, Corliss A; Crandall, Philip G; Lee, Sun-Ok; Ricke, Steven C

2013-01-01

In this study we assessed the use of acridine orange as an alternative to optical density to quantify the growth of Lactobacillus bulgaricus ATCC 7517. The growth of bacteria in Lactobacillus de Man Rogosa Sharpe (MRS) medium was measured by both acridine orange (AO) and optical density (OD) measurements for 24 h. The relationship between both methods was compared via correlation analysis. The doubling time of bacteria based on the values of OD600 and AO obtained during 24 h growth were also calculated. The result shows strong correlation of cell growth between OD600 and AO during the first 10 hours of growth, but the correlation was less strong when analyzing the data from 0 to 24 hours. Growth rates, generation time and lag time were also similar. This study indicates that AO could be used in place of OD to prepare growth curves of Lactobacillus bulgaricus during the exponential phase of growth, and to compare growth rates, generation times or lag times.

Growth and Pattern of Women’s Studies in Malaysia as Reflected by Generated Literature

OpenAIRE

Zainab, A.N.

2008-01-01

The study uses research-based resources listed in two published bibliographies on “Women in development in Malaysia” produced between the pre 1970 years and 2004 to describe the growth and pattern of women’s studies in Malaysia. A total 4037 resources formed the basis of the study. Bibliometric measure are used to indicate the annual growth of literature over the periods, the preferred publication channels used by the authors, the subject areas of research interests, the active authors and th...

Thin film growth studies using time-resolved x-ray scattering

Science.gov (United States)

Kowarik, Stefan

2017-02-01

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Liquid phase electro epitaxy growth kinetics of GaAs-A three-dimensional numerical simulation study

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2006-01-01

A three-dimensional numerical simulation study for the liquid phase electro epitaxial growth kinetic of GaAs is presented. The kinetic model is constructed considering (i) the diffusive and convective mass transport, (ii) the heat transfer due to thermoelectric effects such as Peltier effect, Joule effect and Thomson effect, (iii) the electric current distribution with electromigration and (iv) the fluid flow coupled with concentration and temperature fields. The simulations are performed for two configurations namely (i) epitaxial growth from the arsenic saturated gallium rich growth solution, i.e., limited solution model and (ii) epitaxial growth from the arsenic saturated gallium rich growth solution with polycrystalline GaAs feed. The governing equations of liquid phase electro epitaxy are solved numerically with appropriate initial and boundary conditions using the central difference method. Simulations are performed to determine the following, a concentration profiles of solute atoms (As) in the Ga-rich growth solution, shape of the substrate evolution, the growth rate of the GaAs epitaxial film, the contributions of Peltier effect and electromigration of solute atoms to the growth with various experimental growth conditions. The growth rate is found to increase with increasing growth temperature and applied current density. The results are discussed in detail

Numerical study of how creep and progressive stiffening affect the growth stress formation in trees

DEFF Research Database (Denmark)

Ormarsson, Sigurdur; Dahlblom, O.; Johansson, M.

2010-01-01

It is not fully understood how much growth stresses affect the final quality of solid timber products in terms of e.g. shape stability. It is for example difficult to predict the internal growth stress field within the tree stem. Growth stresses are progressively generated during the tree growth...... and they are highly influenced by climate, biologic and material related factors. To increase the knowledge of the stress formation a finite element model was created to study how the growth stresses develop during the tree growth. The model is an axisymmetric general plane strain model where material for all new...... annual rings is progressively added to the tree during the analysis. The material model used is based on the theory of small strains (where strains refer to the undeformed configuration which is good approximation for strains less than 4%) where so-called biological maturation strains (growth...

Impact of External Debt on Economic Growth: a Case Study of Pakistan

Directory of Open Access Journals (Sweden)

Farrukh Shahzad

2014-12-01

Full Text Available Since 1980s, the mounting debts and debt payment service of Pakistan due focus and consideration from the Policy makers and economists. This study was additionally done to audit and investigate the effect of external debt overhauling on the development and growth of Pakistan's economy. To hunt the target of research, five variables i.e. Growth, external debt servicing, saving, net export, Foreign Direct Investment were taken to focus their fact association with the GDP or development of the Pakistan's economy. Annual panel data was taken from the source World Bank indicator from the period of 1980 to 2013 and was manipulated through least square multiple regression models. The main variable external debt has significantly negative impact on dependent variable GDP so it’s concluded that Pakistan should go for the option of debt forgiveness and must invite FDI but not much as their overloading may hurt the economy. Adjusting saving (ADS highly significant positive relation with GDP reveals that habit of saving extremely boost up economy growth. Exports is basically good to helping hand for economy so they must be lifted up. The impact of external debt is quite hostile on growth so steps must be taken to abolish it in order to growth of economy.

Comparative Study of Worldwide Species of Genus Lentinus (=Lentinula, Higher Basidiomycetes) Based on Linear Mycelium Growth.

Science.gov (United States)

Mata, Juan Luis; Mishra, Nutan Tulapurkar

2015-01-01

Species of mushroom genus Lentinus (=Lentinula) are best known for the commercially important and extensively studied culinary-medicinal shiitake, L. edodes. A few mycelium growth studies have focused on Lentinus boryana, but information is lacking for L. raphanica and L. aciculospora, endemic to the Americas. In this study, 14 dikaryon strains representing 5 Lentinus species were grown on 5 nutritive agar media at increments of 5°C. Growth for each species was significantly slower on corn meal agar, but no differences were found among malt extract, potato dextrose, malt peptone, and yeast malt extract agars. Lentinus aciculospora and L. boryana consistently exhibited the slowest mycelium growth rates among all species and across all temperatures tested, with optima at 15°C and 20°C. The fastest mycelium growth rates for L. edodes, L. novaezelandiae, and L. raphanica occurred at 25°C. Strains of the latter continued to grow well at 30°C, whereas growth of the other 2 species declined significantly. Differences in mycelium growth rates for American strains could be partially explained by their geographic locations, indicating that understanding this physiological parameter has important ramifications for the edible mushroom industry.

A combined optical, SEM and STM study of growth spirals

Indian Academy of Sciences (India)

Some novel results of a combined sequential study of growth spirals on the basal surface of the richly polytypic CdI2 crystals by optical microscopy, scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) are presented and discussed. In confirmation of the known structural data, the STM pictures ...

A preliminary study on growth response of broiler finishers fed ...

African Journals Online (AJOL)

A preliminary study on growth response of broiler finishers fed processed mottle Mucuna beans ( Mucuna pruriens var. utilis ) ... They were fed diets (20% CP, 13 MJME/kg) incorporating 0%, 5% and 10% processed mottle “Mucuna” beans. A completely randomized design was used. Feed and water were supplied and ...

Study of pore growth in glassy carbon using small angle x-ray scattering

International Nuclear Information System (INIS)

Hoyt, J.

1982-07-01

Small-angle x-ray scattering was used to study the average pore size in glass-like carbon as a function of both heat-treatment time and heat-treatment temperature. A pore-growth model based on graphitization processes is presented. The simple mechanism shows that the change in the average radius of gyration with time is related to the total number of pores as a function of time, which in turn depends on the irreversible thermal-expansion phenomenon. The results of this study are inconsistent with a vacancy-migration pore-growth mechanism proposed earlier

A Study on China's Income Inequality and the Relationship with Economic Growth

OpenAIRE

Xi, Xiaochuan

2009-01-01

The purpose of this paper is to study China’s income inequality under rapid economic growth.Does the relationship between economic growth and income inequality in China follow theKuznets hypothesis? What is the main cause and trend of China’s income inequality? We usedata which covers the period 1980-2005 to analyze the overall inequality, and data coveringthe period 1980-2002 to analyze the inequality inside rural and urban areas. The derivedresults doubt the validity of Kuznets hypothesis o...

radiochemical studies on the growth of myeloma cells

International Nuclear Information System (INIS)

Elshershaby, H.M.M.

2008-01-01

cancer is a disease of unregulated cell growth. humans of all ages develop cancer, and a wide variety of organs are affected. multiple myeloma is a cancer in which antibody-producing plasma cells grow in an uncontrolled and invasive (malignant) manner. melphalan (DNA cross-linker), is one of the most widely used and effective drugs in the treatment of multiple myeloma. thalidomide as an immunomodulatory agent is clinically useful in a number of cancers. antitumor activity may be related to a number of known properties, including antitumor necrosis factor (TNF)-α and T-cell costimulatory and antiangiogenic effect. however, it may also involve direct antitumor effects. radiotherapy is an important modality in the treatment of cancer. the aim of radiotherapy is to deliver radiation doses and schedules that kill cancer cells, while preserving normal tissue function. the aim of these studies was to evaluate the therapeutic effects of some chemical substances (chemotherapy)such as melphalan and thalidomide and γ-radiation (radiotherapy)on the growth of myeloma cells. also some confirmatory tests such as β2-microglobulin, caspases enzymes 8 and 9 and flow cytometric analyses were performed for the obtained optimum doses.

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Science.gov (United States)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

A controlled study on serum insulin-like growth factor-I and urinary excretion of growth hormone in fibromyalgia

DEFF Research Database (Denmark)

Jacobsen, S; Main, K; Danneskiold-Samsøe, B

1995-01-01

OBJECTIVE. It has been hypothesized that secretory deficiencies of growth hormone may play a pathophysiological role in fibromyalgia (FM). Our objective was thus to evaluate the secretion of growth hormone in FM. METHODS. The 24-h urinary growth hormone excretion and serum levels of insulin...

Body growth and brain development in premature babies: an MRI study

International Nuclear Information System (INIS)

Tzarouchi, Loukia C.; Zikou, Anastasia; Kosta, Paraskevi; Argyropoulou, Maria I.; Drougia, Aikaterini; Andronikou, Styliani; Astrakas, Loukas G.

2014-01-01

Prematurity and intrauterine growth restriction are associated with neurodevelopmental disabilities. To assess the relationship between growth status and regional brain volume (rBV) and white matter microstructure in premature babies at around term-equivalent age. Premature infants (n= 27) of gestational age (GA): 29.8 ± 2.1 weeks, with normal brain MRI scans were studied at corrected age: 41.2 ± 1.4 weeks. The infants were divided into three groups: 1) appropriate for GA at birth and at the time of MRI (AGA), 2) small for GA at birth with catch-up growth at the time of MRI (SGA a ) and 3) small for GA at birth with failure of catch-up growth at the time of MRI (SGA b ). The T1-weighted images were segmented into 90 rBVs using the SPM8/IBASPM and differences among groups were assessed. Fractional anisotropy (FA) was measured bilaterally in 15 fiber tracts and its relationship to GA and somatometric measurements was explored. Lower rBV was observed in SGA b in superior and anterior brain areas. A positive correlation was demonstrated between FA and head circumference and body weight. Body weight was the only significant predictor for FA (P< 0.05). In premature babies, catch-up growth is associated with regional brain volume catch-up at around term-equivalent age, starting from the brain areas maturing first. Body weight seems to be a strong predictor associated with WM microstructure in brain areas related to attention, language, cognition, memory and executing functioning. (orig.)

Body growth and brain development in premature babies: an MRI study

Energy Technology Data Exchange (ETDEWEB)

Tzarouchi, Loukia C.; Zikou, Anastasia; Kosta, Paraskevi; Argyropoulou, Maria I. [University of Ioannina, Department of Radiology, Medical School, Ioannina (Greece); Drougia, Aikaterini; Andronikou, Styliani [University of Ioannina, Intensive Care Unit, Child Health Department, Medical School, Ioannina (Greece); Astrakas, Loukas G. [University of Ioannina, Department of Medical Physics, Medical School, Ioannina (Greece)

2014-03-15

Prematurity and intrauterine growth restriction are associated with neurodevelopmental disabilities. To assess the relationship between growth status and regional brain volume (rBV) and white matter microstructure in premature babies at around term-equivalent age. Premature infants (n= 27) of gestational age (GA): 29.8 ± 2.1 weeks, with normal brain MRI scans were studied at corrected age: 41.2 ± 1.4 weeks. The infants were divided into three groups: 1) appropriate for GA at birth and at the time of MRI (AGA), 2) small for GA at birth with catch-up growth at the time of MRI (SGA{sub a}) and 3) small for GA at birth with failure of catch-up growth at the time of MRI (SGA{sub b}). The T1-weighted images were segmented into 90 rBVs using the SPM8/IBASPM and differences among groups were assessed. Fractional anisotropy (FA) was measured bilaterally in 15 fiber tracts and its relationship to GA and somatometric measurements was explored. Lower rBV was observed in SGA{sub b} in superior and anterior brain areas. A positive correlation was demonstrated between FA and head circumference and body weight. Body weight was the only significant predictor for FA (P< 0.05). In premature babies, catch-up growth is associated with regional brain volume catch-up at around term-equivalent age, starting from the brain areas maturing first. Body weight seems to be a strong predictor associated with WM microstructure in brain areas related to attention, language, cognition, memory and executing functioning. (orig.)

[Effects of elevated ozone on Pinus armandii growth: a simulation study with open-top chamber].

Science.gov (United States)

Liu, Chang-Fu; Liu, Chen; He, Xing-Yuan; Ruan, Ya-Nan; Xu, Sheng; Chen, Zhen-Ju; Peng, Jun-Jie; Li, Teng

2013-10-01

By using open-top chamber (OTC) and the techniques of dendrochronology, this paper studied the growth of Pinus armandii under elevated ozone, and explored the evolution dynamics and adaptation mechanisms of typical forest ecosystems to ozone enrichment. Elevated ozone inhibited the stem growth of P. armandii significantly, with the annual growth of the stem length and diameter reduced by 35.0% and 12.9%, respectively. The annual growth of tree-ring width and the annual ring cells number decreased by 11.5% and 54.1%, respectively, but no significant change was observed in the diameter of tracheid. At regional scale, the fluctuation of ozone concentration showed significant correlation with the variation of local vegetation growth (NDVI).

Energy consumption, prices and economic growth in three SSA countries: A comparative study

International Nuclear Information System (INIS)

Odhiambo, Nicholas M.

2010-01-01

In this paper we examine the causal relationship between energy consumption and economic growth in three sub-Saharan African countries, namely South Africa, Kenya and Congo (DRC). We incorporate prices as an intermittent variable in a bivariate setting between energy consumption and economic growth-thereby creating a simple trivariate framework. Using the ARDL-bounds testing procedure, we find that the causality between energy consumption and economic growth varies significantly across the countries under study. The results show that for South Africa and Kenya there is a unidirectional causal flow from energy consumption to economic growth. However, for Congo (DRC) it is economic growth that drives energy consumption. These findings have important policy implications insofar as energy conservation policies are concerned. In the case of Congo (DRC), for example, the implementation of energy conservation policies may not significantly affect economic growth because the country's economy is not entirely energy dependent. However, for South Africa and Kenya there is a need for more energy supply augmentations in order to cope with the long-run energy demand. In the short-run, however, the two countries should explore more efficient and cost-effective sources of energy in order to address the energy dependency problem.

Bend case study : indirect land use and growth impacts : interim report

Science.gov (United States)

2000-01-01

To improve environmental analysis of indirect land use impacts of highway capacity improvements, this study analyzed the land use and growth patterns of 20 Oregon communities over 20 years. Using a Geographic Information System and aerial photos, gro...

Transverse maxillary and mandibular growth during and after bionator therapy: study with metallic implants.

Science.gov (United States)

Monini, André da Costa; Júnior, Luiz Gonzaga Gandini; Maia, Luiz Guilherme Martins; Pinto, Ary dos Santos

2013-01-01

This study evaluated posteroanterior cephalograms before and after treatment and long term follow-up of Class II division 1 patients treated with bionator. The objective was to demonstrate the transverse growth of maxilla and mandible during and after bionator therapy. Measurement of transverse dimensions between posterior maxillary and mandibular implants, as well as the distances between the buccal, gonial and antegonial points were recorded. Measurements were analyzed at three periods: T1 - before bionator therapy, T2 - after bionator therapy and T3 - 5.74 years after T2. There was statistically significant transverse increase due to growth and/or treatment for all variables, except for the distance between the anterior maxillary implants. During the study period only the anterior maxillary area did not show transverse growth.

n-Type Doping and Morphology of GaAs Nanowires in Aerotaxy

Energy Technology Data Exchange (ETDEWEB)

Metaferia, Wondwosen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sivakumar, Sudhakar [Lund University; Persson, Axel R. [Lund University; Geijselaers, Irene [Lund University; Wallenberg, L. Reine [Lund University; Deppert, Knut [Lund University; Samuelson, Lars [Lund University; Magnusson, Martin [Lund University

2018-04-17

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.

Theoretical studies of growth processes and electronic properties of nanostructures on surfaces

Science.gov (United States)

Mo, Yina

Low dimensional nanostructures have been of particular interest because of their potential applications in both theoretical studies and industrial use. Although great efforts have been put into obtaining better understanding of the formation and properties of these materials, many questions still remain unanswered. This thesis work has focused on theoretical studies of (1) the growth processes of magnetic nanowires on transition-metal surfaces, (2) the dynamics of pentacene thin-film growth and island structures on inert surfaces, and (3) our proposal of a new type of semiconducting nanotube. In the first study, we elucidated a novel and intriguing kinetic pathway for the formation of Fe nanowires on the upper edge of a monatomic-layer-high step on Cu(111) using first-principles calculations. The identification of a hidden fundamental Fe basal line within the Cu steps prior to the formation of the apparent upper step edge Fe wire produces a totally different view of step-decorating wire structures and offers new possibilities for the study of the properties of these wires. Subsequent experiments with scanning tunneling microscopy unambiguously established the essential role of embedded Fe atoms as precursors to monatomic wire growth. A more general study of adatom behavior near transition-metal step edges illustrated a systematic trend in the adatom energetics and kinetics, resulted from the electronic interactions between the adatom and the surfaces. This work opens the possibility of controlled manufacturing of one-dimensional nanowires. In the second study, we investigated pentacene thin-films on H-diamond, H-silica and OH-silica surfaces via force field molecular dynamics simulations. Pentacene island structures on these surfaces were identified and found to have a 90-degree rotation relative to the structure proposed by some experimental groups. Our work may facilitate the design and control of experimental pentacene thin-film growth, and thus the development

Study of growth kinetics in melt-textured YBa2Cu3O7-x

International Nuclear Information System (INIS)

Athur, S.P.; Selvamanickam, V.; Balachandran, U.; Salama, K.

1996-01-01

Directional solidification has been shown to be a successful way of achieving high current densities in bulk YBCO. The lack of understanding of the growth kinetics, however, makes it difficult to fabricate longer samples and reduce the processing times. To study the growth kinetics, quenching experiments of undoped YBa 2 Cu 3 O 7-x (Y-123) and Y-123 doped with Pt and Nd from above the peritectic temperature with different holding times, t, were conducted. The results of these experiments indicate that the average 211 particle size varies as t 1/3 . Growth rate experiments were also conducted on these samples to determine the maximum growth rate for plane front solidification, R max . This quantity was measured for undoped and doped Y-123 and its was found that the addition of Pt did not increase R max while the addition of Nd doubled the growth rate. Using the coarsening results together with the growth rate experiments, the diffusivity of Y in liquid and the 211-liquid interfacial energy for undoped and doped Y-123 were calculated. copyright 1996 Materials Research Society

THE IMPACT OF INVESTMENTS, EXPORTS, AND OPENNESS ON ECONOMIC GROWTH. A COMPARATIVE STUDY ON THE EAST EUROPEAN COUNTRIES

Directory of Open Access Journals (Sweden)

Simuţ Ramona

2012-12-01

Full Text Available The study of the economic growth process has older implications. The preoccupation for the study of the economic growth has existed beginning with the representatives of the Classical School and continuing with the Keynesians, Neokeynesians, and Neoclassics. A series of empirical studies have tested the correlation between the dynamics of the different factors and the process of economic growth. \\r\

Parametric study on vapor-solid-solid growth mechanism of multiwalled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Shukrullah, S., E-mail: zshukrullah@gmail.com [Center of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, 32610, Bandar Seri Iskandar, Perak (Malaysia); Mohamed, N.M. [Center of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, 32610, Bandar Seri Iskandar, Perak (Malaysia); Shaharun, M.S. [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 32610, Bandar Seri Iskandar, Perak (Malaysia); Naz, M.Y. [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 32610, Bandar Seri Iskandar, Perak (Malaysia)

2016-06-15

This study aimed at investigating the effect of the fluidized bed chemical vapor deposition (FBCVD) process parameters on growth mechanism, morphology and purity of the multiwalled carbon nanotubes (MWCNTs). Nanotubes were produced in a vertical FBCVD reactor by catalytic decomposition of ethylene over Al{sub 2}O{sub 3} supported nano-iron catalyst buds at different flow rates. FESEM, TEM, Raman spectroscopy and TGA thermograms were used to elaborate the growth parameters of the as grown MWCNTs. As the growth process was driven by the process temperatures well below the iron-carbon eutectic temperature (1147 °C), the appearance of graphite platelets from the crystallographic faces of the catalyst particles suggested a solid form of the catalyst during CNT nucleation. A vapor-solid-solid (VSS) growth mechanism was predicted for nucleation of MWCNTs with very low activation energy. The nanotubes grown at optimized temperature and ethylene flow rate posed high graphitic symmetry, purity, narrow diameter distribution and shorter inter-layer spacing. In Raman and TGA analyses, small I{sub D}/I{sub G} ratio and residual mass revealed negligible ratios of structural defects and amorphous carbon in the product. However, several structural defects and impurity elements were spotted in the nanotubes grown under unoptimized process parameters. - Graphical abstract: Arrhenius plot of relatively pure MWCNTs grown over Al2O3 supported nano-iron buds. - Highlights: • Vapor–solid–solid growth mechanism of MWCNTs was studied in a vertical FBCVD reactor. • MWCNTs were grown over Al2O3 supported nano-iron buds at very low activation energy. • FBCVD reactor was operated at temperatures well below the iron-carbon eutectic point. • Ideally graphitized structures were obtained at a process temperature of 800 °C. • Tube diameter revealed a narrow distribution of 20–25 nm at the optimum temperature.

Parametric study on vapor-solid-solid growth mechanism of multiwalled carbon nanotubes

International Nuclear Information System (INIS)

Shukrullah, S.; Mohamed, N.M.; Shaharun, M.S.; Naz, M.Y.

2016-01-01

This study aimed at investigating the effect of the fluidized bed chemical vapor deposition (FBCVD) process parameters on growth mechanism, morphology and purity of the multiwalled carbon nanotubes (MWCNTs). Nanotubes were produced in a vertical FBCVD reactor by catalytic decomposition of ethylene over Al_2O_3 supported nano-iron catalyst buds at different flow rates. FESEM, TEM, Raman spectroscopy and TGA thermograms were used to elaborate the growth parameters of the as grown MWCNTs. As the growth process was driven by the process temperatures well below the iron-carbon eutectic temperature (1147 °C), the appearance of graphite platelets from the crystallographic faces of the catalyst particles suggested a solid form of the catalyst during CNT nucleation. A vapor-solid-solid (VSS) growth mechanism was predicted for nucleation of MWCNTs with very low activation energy. The nanotubes grown at optimized temperature and ethylene flow rate posed high graphitic symmetry, purity, narrow diameter distribution and shorter inter-layer spacing. In Raman and TGA analyses, small I_D/I_G ratio and residual mass revealed negligible ratios of structural defects and amorphous carbon in the product. However, several structural defects and impurity elements were spotted in the nanotubes grown under unoptimized process parameters. - Graphical abstract: Arrhenius plot of relatively pure MWCNTs grown over Al2O3 supported nano-iron buds. - Highlights: • Vapor–solid–solid growth mechanism of MWCNTs was studied in a vertical FBCVD reactor. • MWCNTs were grown over Al2O3 supported nano-iron buds at very low activation energy. • FBCVD reactor was operated at temperatures well below the iron-carbon eutectic point. • Ideally graphitized structures were obtained at a process temperature of 800 °C. • Tube diameter revealed a narrow distribution of 20–25 nm at the optimum temperature.

Anthropometric growth study of the ear in a Chinese population.

Science.gov (United States)

Zhao, Shichun; Li, Dianguo; Liu, Zhenzhong; Wang, Yibiao; Liu, Lei; Jiang, Duyin; Pan, Bo

2018-04-01

A large number of anthropometric studies of the auricle have been reported in different nations, but little data were available in the Chinese population. The aim of this study was to analyze growth changes in the ear by measuring the width and length of ears in a Chinese population. A total of 480 participants were enrolled and classified into 1-, 3-, 5-, 7-, 9-, 12-, 14-, and 18-year groups (half were boys and half were girls in each group). Ear length, ear width, body weight, and body length were measured and recorded; ear index was calculated according to ear length and ear width. The growth of auricle and differences between genders were analyzed. Growth of ear in relation to body height and weight and the degree of emphasis on the length and width of the auricle were also analyzed. Ear length and width increased with age. Ear length achieved its mature size in both 14-year-old males and females. Ear width reached its mature size in males at 7 years and in females at 5 years. Different trends of ear index were shown between males and females. People in this population paid more attention to the length than the width of the auricle. The data indicated that ear development followed increase in age. There were gender and ethnic difference in the development of ear. These results may have potential implications for the diagnosis of congenital malformations, syndromes, and planning of ear reconstruction surgery. Copyright © 2017 British Association of Plastic, Reconstructive and Aesthetic Surgeons. Published by Elsevier Ltd. All rights reserved.

Cohort profile: Pacific Islands Families (PIF) growth study, Auckland, New Zealand.

Science.gov (United States)

Rush, E; Oliver, M; Plank, L D; Taylor, S; Iusitini, L; Jalili-Moghaddam, S; Savila, F; Paterson, J; Tautolo, E

2016-11-02

This article profiles a birth cohort of Pacific children participating in an observational prospective study and describes the study protocol used at ages 14-15 years to investigate how food and activity patterns, metabolic risk and family and built environment are related to rates of physical growth of Pacific children. From 2000 to 2015, the Pacific Islands Families Study has followed, from birth, the growth and development of over 1000 Pacific children born in Auckland, New Zealand. In 2014, 931 (66%) of the original cohort had field measures of body composition, blood pressure and glycated haemoglobin. A nested subsample (n=204) was drawn by randomly selecting 10 males and 10 females from each decile of body weight. These participants had measurement of body composition by dual-energy X-ray absorptiometry, food frequency, 6 min walk test and accelerometer-determined physical activity and sedentary behaviours, and blood biomarkers for metabolic disease such as diabetes. Built environment variables were generated from individual addresses. Compared to the Centres for Disease Control and Prevention (CDC) reference population with mean SD scores (SDS) of 0, this cohort of 931 14-year-olds was taller, weighed more and had a higher body mass index (BMI) (mean SDS height >0.6, weight >1.6 and BMI >1.4). 7 of 10 youth were overweight or obese. The nested-sampling frame achieved an even distribution by body weight. Cross-sectional relationships between body size, fatness and growth rate, food patterns, activity patterns, pubertal development, risks for diabetes and hypertension and the family and wider environment will be examined. In addition, analyses will investigate relationships with data collected earlier in the life course and measures of the cohort in the future. Understanding past and present influences on child growth and health will inform timely interventions to optimise future health and reduce inequalities for Pacific people. Published by the BMJ

Cohort profile: Pacific Islands Families (PIF) growth study, Auckland, New Zealand

Science.gov (United States)

Rush, E; Oliver, M; Plank, L D; Taylor, S; Iusitini, L; Jalili-Moghaddam, S; Savila, F; Paterson, J; Tautolo, E

2016-01-01

Purpose This article profiles a birth cohort of Pacific children participating in an observational prospective study and describes the study protocol used at ages 14–15 years to investigate how food and activity patterns, metabolic risk and family and built environment are related to rates of physical growth of Pacific children. Participants From 2000 to 2015, the Pacific Islands Families Study has followed, from birth, the growth and development of over 1000 Pacific children born in Auckland, New Zealand. In 2014, 931 (66%) of the original cohort had field measures of body composition, blood pressure and glycated haemoglobin. A nested subsample (n=204) was drawn by randomly selecting 10 males and 10 females from each decile of body weight. These participants had measurement of body composition by dual-energy X-ray absorptiometry, food frequency, 6 min walk test and accelerometer-determined physical activity and sedentary behaviours, and blood biomarkers for metabolic disease such as diabetes. Built environment variables were generated from individual addresses. Findings to date Compared to the Centres for Disease Control and Prevention (CDC) reference population with mean SD scores (SDS) of 0, this cohort of 931 14-year-olds was taller, weighed more and had a higher body mass index (BMI) (mean SDS height >0.6, weight >1.6 and BMI >1.4). 7 of 10 youth were overweight or obese. The nested-sampling frame achieved an even distribution by body weight. Future plans Cross-sectional relationships between body size, fatness and growth rate, food patterns, activity patterns, pubertal development, risks for diabetes and hypertension and the family and wider environment will be examined. In addition, analyses will investigate relationships with data collected earlier in the life course and measures of the cohort in the future. Understanding past and present influences on child growth and health will inform timely interventions to optimise future health and reduce

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum well

Czech Academy of Sciences Publication Activity Database

Mikhailova, M. P.; Ivanov, E.V.; Danilov, L.V.; Petukhov, A.A.; Kalinina, K.V.; Slobozhanyuk, S.I.; Zegrya, G.G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Zíková, Markéta; Hulicius, Eduard

2014-01-01

Roč. 115, č. 22 (2014), "223102-1"-"223102-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S Institutional support: RVO:68378271 Keywords : MOVPE * GaSb * InAs * electroluminescence * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Kinetic and biochemical studies on tumor growth. Comprehensive progress report, October 1, 1967--April 1, 1975

International Nuclear Information System (INIS)

Dethlefsen, L.A.

1975-01-01

The growth kinetics of four lines of the C3H mammary tumor have been studied by standard autoradiographic procedures in combination with volumetric growth curve analysis. Thus, such parameters as volumetric doubling time, mean cell generation time, growth fraction, and cell loss have been measured. Two of these lines (Slow and S102F) are currently being used for studying hormone responsiveness both in vivo and in vitro and the perturbed kinetics following insults with therapeutic agents. The respective values for the above parameters are: Slow; 21.0 days, 34 hours, 0.20, 9 percent per day, and S102F; 2.5 days, 17 hours, 0.60, 27 percent per day. A direct method ( 125 I-IUdR Method) for measuring cell loss has also been developed. This method consists of injecting mice with 125 I-IUdR and then measuring the loss of 125 I-activity from the tumor. The antigenic status of these tumors has been studied as one possible factor underlying the different growth kinetics. The mouse's immunological system was either suppressed (thymectomy and whole-body x-irradiation) or stimulated (previous exposure to tumor cells) and the percent takes, latent period, and growth rates measured. There was no evidence for a strong antigenic factor in any of these tumors. Hydroxyurea is being used as a tool for studying the perturbed cellular kinetics of the duodenum and the Slow and S102F tumors. The methods used are autoradiography, volumetric growth curve analysis, and measurements of the rates of DNA synthesis. Hormone effects on growth have been studied. Insulin had no effect but large doses of corticosterone (20 μg/ml and greater) were inhibitory and prolactin appeared to partially reverse these effects in the Slow line. (U.S.)

Radiotracer studies on protein metabolism in different focuses of growth in vivo

International Nuclear Information System (INIS)

Rapoport, E.A.; Konikova, A.S.

1979-01-01

The role of various components of protein turnover in the liver growth induced by partial hepatectomy or phenobarbital as well as in malignant tumours has been studied with a radiotracer method. The ratio of the utilized precursors of exo- and endogenous origin during the formation of protein in focuses of growth, is labile, depends on a number of factors and varies even in the subcellular structures of the cell nucleus. It is probable that due to their reutilization through transreactions the protein structural units have in some focuses of growth and during formation of some proteins a definite superiority over the free aminoacids. It is also shown that the release of proteins and their degradation products from Walker 256 carcinosarcoma and the reutilization of proteins and their degradation products by sarcoma M-1 contribute to the protein turnover in the tumours. 8author)

Placebo-controlled study of montelukast and budesonide on short-term growth in prepubertal asthmatic children

DEFF Research Database (Denmark)

Pedersen, Søren; Agertoft, Lone; Williams-Herman, Debora

2007-01-01

Inhaled corticosteroids and anti-leukotriene agents are widely used in the treatment of pediatric asthma. Although data on the effect of corticosteroids on growth are available, there are few such data on anti-leukotriene agents. The aim of this study was to assess the influence of montelukast on...... on short-term lower leg growth rate (LLGR) in prepubertal children with asthma.......Inhaled corticosteroids and anti-leukotriene agents are widely used in the treatment of pediatric asthma. Although data on the effect of corticosteroids on growth are available, there are few such data on anti-leukotriene agents. The aim of this study was to assess the influence of montelukast...

Postnatal growth standards for preterm infants: the Preterm Postnatal Follow-up Study of the INTERGROWTH-21(st) Project.

Science.gov (United States)

Villar, José; Giuliani, Francesca; Bhutta, Zulfiqar A; Bertino, Enrico; Ohuma, Eric O; Ismail, Leila Cheikh; Barros, Fernando C; Altman, Douglas G; Victora, Cesar; Noble, Julia A; Gravett, Michael G; Purwar, Manorama; Pang, Ruyan; Lambert, Ann; Papageorghiou, Aris T; Ochieng, Roseline; Jaffer, Yasmin A; Kennedy, Stephen H

2015-11-01

Charts of size at birth are used to assess the postnatal growth of preterm babies on the assumption that extrauterine growth should mimic that in the uterus. The INTERGROWTH-21(st) Project assessed fetal, newborn, and postnatal growth in eight geographically defined populations, in which maternal health care and nutritional needs were met. From these populations, the Fetal Growth Longitudinal Study selected low-risk women starting antenatal care before 14 weeks' gestation and monitored fetal growth by ultrasonography. All preterm births from this cohort were eligible for the Preterm Postnatal Follow-up Study, which included standardised anthropometric measurements, feeding practices based on breastfeeding, and data on morbidity, treatments, and development. To construct the preterm postnatal growth standards, we selected all live singletons born between 26 and before 37 weeks' gestation without congenital malformations, fetal growth restriction, or severe postnatal morbidity. We did analyses with second-degree fractional polynomial regression models in a multilevel framework accounting for repeated measures. Fetal and neonatal data were pooled from study sites and stratified by postmenstrual age. For neonates, boys and girls were assessed separately. From 4607 women enrolled in the study, there were 224 preterm singleton births, of which 201 (90%) were enrolled in the Preterm Postnatal Follow-up Study. Variance component analysis showed that only 0·2% and 4·0% of the total variability in postnatal length and head circumference, respectively, could be attributed to between-site differences, justifying pooling the data from all study sites. Preterm growth patterns differed from those for babies in the INTERGROWTH-21(st) Newborn Size Standards. They overlapped with the WHO Child Growth Standards for term babies by 64 weeks' postmenstrual age. Our data have yielded standards for postnatal growth in preterm infants. These standards should be used for the assessment of

An open circuit balance respirometer for bioenergetic studies of fish growth

NARCIS (Netherlands)

Hogendoorn, H.; Korlaar, van F.; Bosch, H.

1981-01-01

A description is given of an open circuit balance respirometer for bioenergetic studies of fish growth using indirect calorimetry. The installation was designed to enable the determination of gas and matter balances of fish, including air breathing species, during prolonged experimental periods.

GaN and LED structures grown on pre-patterned silicon pillar arrays

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

2010-01-15

GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Transverse maxillary and mandibular growth during and after Bionator therapy: study with metallic implants

Directory of Open Access Journals (Sweden)

André da Costa Monini

2013-06-01

Full Text Available INTRODUCTION: This study evaluated posteroanterior cephalograms before and after treatment and long term follow-up of Class II division 1 patients treated with bionator. OBJECTIVE: The objective was to demonstrate the transverse growth of maxilla and mandible during and after bionator therapy. METHODS: Measurement of transverse dimensions between posterior maxillary and mandibular implants, as well as the distances between the buccal, gonial and antegonial points were recorded. Measurements were analyzed at three periods: T1 = before bionator therapy, T2 = after bionator therapy and T3 = 5.74 years after T2. RESULTS: There was statistically significant transverse increase due to growth and/or treatment for all variables, except for the distance between the anterior maxillary implants. CONCLUSIONS: During the study period only the anterior maxillary area did not show transverse growth.

Selective LPCVD growth of graphene on patterned copper and its growth mechanism

Science.gov (United States)

Zhang, M.; Huang, B.-C.; Wang, Y.; Woo, J. C. S.

2016-12-01

Copper-catalyzed graphene low-pressure chemical-vapor deposition (LPCVD) growth has been regarded as a viable solution towards its integration to CMOS technology, and the wafer-bonding method provides a reliable alternative for transferring the selective graphene grown on a patterned metal film for IC manufacturing. In this paper, selective LPCVD graphene growth using patterned copper dots has been studied. The Raman spectra of grown films have demonstrated large dependence on the growth conditions. To explain the results, the growth mechanisms based on surface adsorption and copper-vapor-assisted growth are investigated by the comparison between the blanket copper films with/without the additional copper source. The copper vapor density is found to be critical for high-quality graphene growth. In addition, the copper-vapor-assisted growth is also evidenced by the carbon deposition on the SiO2 substrate of the patterned-copper-dot sample and chamber wall during graphene growth. This growth mechanism explains the correlation between the growth condition and Raman spectrum for films on copper dots. The study on the copper-catalyzed selective graphene growth on the hard substrate paves the way for the synthesis and integration of the 2D material in VLSI.

Somatic growth of mussels Mytilus edulis in field studies compared to predictions using BEG, DEB, and SFG models

DEFF Research Database (Denmark)

Larsen, Poul Scheel; Filgueira, Ramón; Riisgård, Hans Ulrik

2014-01-01

Prediction of somatic growth of blue mussels, Mytilus edulis, based on the data from 2 field-growth studies of mussels in suspended net-bags in Danish waters was made by 3 models: the bioenergetic growth (BEG), the dynamic energy budget (DEB), and the scope for growth (SFG). Here, the standard BEG...... at nearly constant environmental conditions with a mean chl a concentration of C=2.7μgL−1, and the observed monotonous growth in the dry weight of soft parts was best predicted by DEB while BEG and SFG models produced lower growth. The second 165-day field study was affected by large variations in chl...... a and temperature, and the observed growth varied accordingly, but nevertheless, DEB and SFG predicted monotonous growth in good agreement with the mean pattern while BEG mimicked the field data in response to observed changes in chl a concentration and temperature. The general features of the models were that DEB...

GROWTH KINETIC STUDY OF CHLORELLA VULGARIS USING LAB-SCALE AND PILOT-SCALE PHOTOBIOREACTOR: EFFECT OF CO2 CONCENTRATION

Directory of Open Access Journals (Sweden)

MAN KEE LAM

2016-07-01

Full Text Available In the present study, growth kinetic of Chlorella vulgaris was performed when the microalgae was cultivated with different concentrations of CO2 . The experiments were carried out using lab-scale and pilot-scale photobioreactors, and the growth results were analyzed using POLYMATH 6.0 with different growth kinetic models. The growth of the microalgae was found fitted well to the Richards growth model with attainable high R2 values as demonstrated in all studied cases, in concert with low values of root mean squares deviation (RMSD and variance. In addition, the output from the plots of experimental values versus predicted values and residual plots further confirmed the good fit of Richards model. The predicted specific growth rate from Richards model was similar to the experimental specific growth rate with deviation lesser than 5%. The attained results paved a preliminary prediction of microalgae growth characteristic when the cultivation is scaled-up to commercial scale.

Analysing growth and development of plants jointly using developmental growth stages.

Science.gov (United States)

Dambreville, Anaëlle; Lauri, Pierre-Éric; Normand, Frédéric; Guédon, Yann

2015-01-01

Plant growth, the increase of organ dimensions over time, and development, the change in plant structure, are often studied as two separate processes. However, there is structural and functional evidence that these two processes are strongly related. The aim of this study was to investigate the co-ordination between growth and development using mango trees, which have well-defined developmental stages. Developmental stages, determined in an expert way, and organ sizes, determined from objective measurements, were collected during the vegetative growth and flowering phases of two cultivars of mango, Mangifera indica. For a given cultivar and growth unit type (either vegetative or flowering), a multistage model based on absolute growth rate sequences deduced from the measurements was first built, and then growth stages deduced from the model were compared with developmental stages. Strong matches were obtained between growth stages and developmental stages, leading to a consistent definition of integrative developmental growth stages. The growth stages highlighted growth asynchronisms between two topologically connected organs, namely the vegetative axis and its leaves. Integrative developmental growth stages emphasize that developmental stages are closely related to organ growth rates. The results are discussed in terms of the possible physiological processes underlying these stages, including plant hydraulics, biomechanics and carbohydrate partitioning. © The Author 2014. Published by Oxford University Press on behalf of the Annals of Botany Company. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Green Fluorescent Protein as a Model for Protein Crystal Growth Studies

Science.gov (United States)

Agena, Sabine; Smith, Lori; Karr, Laurel; Pusey, Marc

1998-01-01

Green fluorescent protein (GFP) from jellyfish Aequorea Victoria has become a popular marker for e.g. mutagenesis work. Its fluorescent property, which originates from a chromophore located in the center of the molecule, makes it widely applicable as a research too]. GFP clones have been produced with a variety of spectral properties, such as blue and yellow emitting species. The protein is a single chain of molecular weight 27 kDa and its structure has been determined at 1.9 Angstrom resolution. The combination of GFP's fluorescent property, the knowledge of its several crystallization conditions, and its increasing use in biophysical and biochemical studies, all led us to consider it as a model material for macromolecular crystal growth studies. Initial preparations of GFP were from E.coli with yields of approximately 5 mg/L of culture media. Current yields are now in the 50 - 120 mg/L range, and we hope to further increase this by expression of the GFP gene in the Pichia system. The results of these efforts and of preliminary crystal growth studies will be presented.

Can extrauterine growth approximate intrauterine growth? Should it?

NARCIS (Netherlands)

Sauer, Pieter J. J.

Most studies evaluating the growth of preterm infants use the so-called intrauterine growth curve and reference fetus as standards. These curves might not be the optimal standards, however, for several reasons. The curves were constructed from small numbers of infants with uncertainty about

Study on growth techniques and macro defects of large-size Nd:YAG laser crystal

Science.gov (United States)

Quan, Jiliang; Yang, Xin; Yang, Mingming; Ma, Decai; Huang, Jinqiang; Zhu, Yunzhong; Wang, Biao

2018-02-01

Large-size neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystals were grown by the Czochralski method. The extinction ratio and wavefront distortion of the crystal were tested to determine the optical homogeneity. Moreover, under different growth conditions, the macro defects of inclusion, striations, and cracking in the as-grown Nd:YAG crystals were analyzed. Specifically, the inclusion defects were characterized using scanning electron microscopy and energy dispersive spectroscopy. The stresses of growth striations and cracking were studied via a parallel plane polariscope. These results demonstrate that improper growth parameters and temperature fields can enhance defects significantly. Thus, by adjusting the growth parameters and optimizing the thermal environment, high-optical-quality Nd:YAG crystals with a diameter of 80 mm and a total length of 400 mm have been obtained successfully.

Study of graphene growth on copper foil by pulsed laser deposition at reduced temperature

Science.gov (United States)

Abd Elhamid, Abd Elhamid M.; Hafez, Mohamed A.; Aboulfotouh, Abdelnaser M.; Azzouz, Iftitan M.

2017-01-01

Graphene has been successfully grown on commercial copper foil at low temperature of 500 °C by pulsed laser deposition (PLD). X-ray diffraction patterns showed that films have been grown in the presence of Cu(111) and Cu(200) facets. Raman spectroscopy was utilized to study the effects of temperature, surface structure, and cooling rate on the graphene growth. Raman spectra indicate that the synthesis of graphene layers rely on the surface quality of the Cu substrate together with the proper cooling profile coupled with graphene growth temperature. PLD-grown graphene film on Cu has been verified by transmission electron microscopy. Surface mediated growth of graphene on Cu foil substrate revealed to have a favorable catalytic effect. High growth rate of graphene and less defects can be derived using fast cooling rate.

Indicators of fetal growth and bipolar disorder: a Danish national register-based study

DEFF Research Database (Denmark)

Øgendahl, Bettina; Agerbo, Esben; Byrne, Majella

2006-01-01

contradictory. The aim of this study was to investigate whether the risk of bipolar disorder is associated with exposure to indicators of fetal growth.Method. A national population nested case-control study based on Danish longitudinal register databases was carried out. Conditional logistic regression was used......, controlling for potential confounding factors such as parental age at birth, socio-economic indicators and psychiatric history. We identified 196 cases, and each case was time-, age- and sex-matched with 25 normal population-based controls. All cases were between the ages of 12 and 26 years at the time......Background. Several studies have found an association between indicators of fetal growth and/or obstetric complications and schizophrenia but only a few studies have investigated the possible association between these factors and bipolar disorder. Furthermore, the results of these studies have been...

Influence of catch-up growth on abdominal fat distribution in very low birth weight children - cohort study.

Science.gov (United States)

Alves, João Guilherme; Vasconcelos, Sarita Amorim; de Almeida, Tais Sá; Lages, Raquel; Just, Eduardo

2015-01-01

A rapid catch-up growth in very low birth weight has been associated both with a higher height growth and a higher risk to metabolic disturbances, including insulin resistance and its consequences. Abdominal fat distribution in early postnatal life may play a role in these outcomes and can help in addressing this neonatal dilemma. This study aimed to compare abdominal fat distribution among very low birth weight (VLBW) children with and without rapid catch-up growth. A cohort study followed 86 VLBW (children born in Brazil, during the first 3 years of life. Rapid catch-up growth was considered as an increased in length >2 Z score during the first year of life. Abdominal subcutaneous and preperitoneal fat thickness was determined by ultrasound. χ²-Test and Student's t-test were used to compare the groups. A total of 79 VLBW children completed the study, of whom 22 (27.8%) showed rapid catch-up growth. Abdominal subcutaneous and preperitoneal fat thickness showed no differences among children with or without rapid catch-up growth at 3.3 mm vs. 3.8 mm, respectively (p=0.79) and 4.0 mm vs. 4.0 mm (p=0.55), respectively. VLBW children with rapid catch-up growth were also taller. Rapid catch-up growth during the first year of life in VLBW children does not seem to change abdominal fat distribution until the third year of life.

Urban Growth Modeling Using AN Artificial Neural Network a Case Study of Sanandaj City, Iran

Science.gov (United States)

Mohammady, S.; Delavar, M. R.; Pahlavani, P.

2014-10-01

Land use activity is a major issue and challenge for town and country planners. Modelling and managing urban growth is a complex problem. Cities are now recognized as complex, non-linear and dynamic process systems. The design of a system that can handle these complexities is a challenging prospect. Local governments that implement urban growth models need to estimate the amount of urban land required in the future given anticipated growth of housing, business, recreation and other urban uses within the boundary. There are so many negative implications related with the type of inappropriate urban development such as increased traffic and demand for mobility, reduced landscape attractively, land use fragmentation, loss of biodiversity and alterations of the hydrological cycle. The aim of this study is to use the Artificial Neural Network (ANN) to make a powerful tool for simulating urban growth patterns. Our study area is Sanandaj city located in the west of Iran. Landsat imageries acquired at 2000 and 2006 are used. Dataset were used include distance to principle roads, distance to residential areas, elevation, slope, distance to green spaces and distance to region centers. In this study an appropriate methodology for urban growth modelling using satellite remotely sensed data is presented and evaluated. Percent Correct Match (PCM) and Figure of Merit were used to evaluate ANN results.

URBAN GROWTH MODELING USING AN ARTIFICIAL NEURAL NETWORK A CASE STUDY OF SANANDAJ CITY, IRAN

Directory of Open Access Journals (Sweden)

S. Mohammady

2014-10-01

Full Text Available Land use activity is a major issue and challenge for town and country planners. Modelling and managing urban growth is a complex problem. Cities are now recognized as complex, non-linear and dynamic process systems. The design of a system that can handle these complexities is a challenging prospect. Local governments that implement urban growth models need to estimate the amount of urban land required in the future given anticipated growth of housing, business, recreation and other urban uses within the boundary. There are so many negative implications related with the type of inappropriate urban development such as increased traffic and demand for mobility, reduced landscape attractively, land use fragmentation, loss of biodiversity and alterations of the hydrological cycle. The aim of this study is to use the Artificial Neural Network (ANN to make a powerful tool for simulating urban growth patterns. Our study area is Sanandaj city located in the west of Iran. Landsat imageries acquired at 2000 and 2006 are used. Dataset were used include distance to principle roads, distance to residential areas, elevation, slope, distance to green spaces and distance to region centers. In this study an appropriate methodology for urban growth modelling using satellite remotely sensed data is presented and evaluated. Percent Correct Match (PCM and Figure of Merit were used to evaluate ANN results.

WHO multicentre study for the development of growth standards from fetal life to childhood

DEFF Research Database (Denmark)

Merialdi, Mario; Widmer, Mariana; Gülmezoglu, Ahmet Metin

2014-01-01

backgrounds. The study will select pregnant women of high-middle socioeconomic status with no obvious environmental constraints on growth (adequate nutritional status, non-smoking), and normal pregnancy history with no complications likely to affect fetal growth. The study will be conducted in centres from...... ten developing and industrialized countries: Argentina, Brazil, Democratic Republic of Congo, Denmark, Egypt, France, Germany, India, Norway, and Thailand. At each centre, 140 pregnant women will be recruited between 8 + 0 and 12 + 6 weeks of gestation. Subsequently, visits for fetal biometry...

Growth monitoring in children with low and normal birth weight up to two years: A retrospective cohort study

Directory of Open Access Journals (Sweden)

Mina Danaei

2016-09-01

Full Text Available Objective: This study was conducted aimed to compare the growth indices in 2 years old children with a history of low birth weight with normal birth weight children.Methods: Current retrospective cohort study on all two-year children with low birth weight and three times the normal weight children covered by health centers of Kahnooj, was conducted in 2015. Cares at birth, 1, 2, 4, 6, 7, 9, 12, 15, 18 and 24 months of age were studied and, child growth indices (weight, height, head circumference, along with some demographic variables were studied. Information were entered SPSS version 20 and the analysis was performed.Results: There were significant differences in children's growth of both groups in all periods of care. Despite the same slope, growth pattern in children showed a significant difference. Young mother, girl sex of baby and preterm birth are predictor factors of low birth weight.Conclusion: Trends and growth patterns of weight, height and head circumference in underweight children have significant difference with normal children and, despite the same slope, these children can not compensate for the backwardness of its growth to the age of two. So you need to plot separate growth curves for these children and, possible preventive measures should be taken to prevent bearing underweight baby.

Postnatal Growth and Retinopathy of Prematurity Study: Rationale, Design, and Subject Characteristics.

Science.gov (United States)

Binenbaum, Gil; Tomlinson, Lauren A

2017-02-01

Postnatal-growth-based predictive models demonstrate strong potential for improving the low specificity of retinopathy of prematurity (ROP) screening. Prior studies are limited by inadequate sample size. We sought to study a sufficiently large cohort of at-risk infants to enable development of a model with highly precise estimates of sensitivity for severe ROP. The Postnatal Growth and ROP (G-ROP) Study was a multicenter retrospective cohort study of infants at 30 North American hospitals during 2006-2012. A total of 65 G-ROP-certified abstractors submitted data to a secure, web-based database. Data included ROP examination findings, treatments, complications, daily weight measurements, daily oxygen supplementation, maternal/infant demographics, medical comorbidities, surgical events, and weekly nutrition. Data quality was monitored with system validation rules, data audits, and discrepancy algorithms. Of 11,261 screened infants, 8334 were enrolled, and 2927 had insufficient data due to transfer, discharge, or death. Of the enrolled infants, 90% (7483) had a known ROP outcome and were included in the study. Median birth weight was 1070 g (range 310-3000g) and mean gestational age 28 weeks (range 22-35 weeks). Severe ROP (Early Treatment of Retinopathy type 1 or 2) developed in 931 infants (12.5%). Successful incorporation of a predictive model into ROP screening requires confidence that it will capture cases of severe ROP. This dataset provides power to estimate sensitivity with half-confidence interval width of less than 0.5%, determined by the high number of severe ROP cases. The G-ROP Study represents a large, diverse cohort of at-risk infants undergoing ROP screening. It will facilitate evaluation of growth-based algorithms to improve efficiency of ROP screening.

Fatigue crack growth studies on a tee junction using ultrasonic non-destructive methods

International Nuclear Information System (INIS)

Subramanian, C.V.; Thavasimuthu, M.; Ramesh, A.S.; Jayakumar, T.; Kalyanasundaram, P.; Baldev Raj

1996-01-01

Fatigue cracks need to be detected and sized to maintain structural integrity. The significance of cracks detected in service must also be assessed. This paper describes the on-line ultrasonic testing carried out on a Tee joint subjected to fatigue loading. The initiation and growth of the cracks were monitored for every 5,000 cycles up to 40,000 cycles. The study demonstrated the use of ultrasonic testing for fatigue crack growth detection and sizing. (author)

In Situ Study of Noncatalytic Metal Oxide Nanowire Growth

DEFF Research Database (Denmark)

Rackauskas, Simas; Jiang, Hua; Wagner, Jakob Birkedal

2014-01-01

a catalyst is still widely disputed and unclear. Here, we show that the nanowire growth during metal oxidation is limited by a nucleation of a new layer. On the basis of in situ transmission electron microscope investigations we found that the growth occurs layer by layer at the lowest specific surface...

Language growth in children with heterogeneous language disorders: a population study.

Science.gov (United States)

Norbury, Courtenay Frazier; Vamvakas, George; Gooch, Debbie; Baird, Gillian; Charman, Tony; Simonoff, Emily; Pickles, Andrew

2017-10-01

Language development has been characterised by significant individual stability from school entry. However, the extent to which trajectories of language growth vary in children with language disorder as a function of co-occurring developmental challenges is a question of theoretical import, with implications for service provision. SCALES employed a population-based survey design with sample weighting procedures to estimate growth in core language skills over the first three years of school. A stratified sample (n = 529) received comprehensive assessment of language, nonverbal IQ, and social, emotional and behavioural difficulties at 5-6 years of age and 95% of the sample (n = 499) were assessed again at ages 7-8. Language growth was measured using both raw and standard scores in children with typical development, children with language disorder of unknown origin, and children with language disorders associated with a known clinical condition and/or intellectual disability. Overall, language was stable at the individual level (estimated ICC = 0.95) over the first three years of school. Linear mixed effects models highlighted steady growth in language raw scores across all three groups, including those with multiple developmental challenges. There was little evidence, however, that children with language disorders were narrowing the gap with peers (z-scores). Adjusted models indicated that while nonverbal ability, socioeconomic status and social, emotional and behavioural deficits predicted initial language score (intercept), none predicted language growth (slope). These findings corroborate previous studies suggesting stable language trajectories after ages 5-6 years, but add considerably to previous work by demonstrating similar developmental patterns in children with additional nonverbal cognitive deficits, social, emotional, and behavioural challenges, social disadvantage or clinical diagnoses. © 2017 The Authors. Journal of Child Psychology and

Growth dependence of conjugation explains limited plasmid invasion in biofilms: an individual‐based modelling study

DEFF Research Database (Denmark)

Merkey, Brian; Lardon, Laurent; Seoane, Jose Miguel

2011-01-01

Plasmid invasion in biofilms is often surprisingly limited in spite of the close contact of cells in a biofilm. We hypothesized that this poor plasmid spread into deeper biofilm layers is caused by a dependence of conjugation on the growth rate (relative to the maximum growth rate) of the donor......, we find that invasion of a resident biofilm is indeed limited when plasmid transfer depends on growth, but not so in the absence of growth dependence. Using sensitivity analysis we also find that parameters related to timing (i.e. a lag before the transconjugant can transfer, transfer proficiency...... and scan speed) and spatial reach (EPS yield, conjugal pilus length) are more important for successful plasmid invasion than the recipients' growth rate or the probability of segregational loss. While this study identifies one factor that can limit plasmid invasion in biofilms, the new individual...

Vermiculite's strong buffer capacity renders it unsuitable for studies of acidity on soybean (Glycine max L.) nodulation and growth.

Science.gov (United States)

Indrasumunar, Arief; Gresshoff, Peter M

2013-11-14

Vermiculite is the most common soil-free growing substrate used for plants in horticultural and scientific studies due to its high water holding capacity. However, some studies are not suitable to be conducted in it. The described experiments aimed to test the suitability of vermiculite to study the effect of acidity on nodulation and growth of soybean (Glycine max L.). Two different nutrient solutions (Broughton & Dilworth, and modified Herridge nutrient solutions) with or without MES buffer addition were used to irrigate soybean grown on vermiculite growth substrates. The pH of nutrient solutions was adjusted to either pH 4.0 or 7.0 prior its use. The nodulation and vegetative growth of soybean plants were assessed at 3 and 4 weeks after inoculation. The unsuitability of presumably inert vermiculite as a physical plant growth substrate for studying the effects of acidity on soybean nodulation and plant growth was illustrated. Nodulation and growth of soybean grown in vermiculite were not affected by irrigation with pH-adjusted nutrient solution either at pH 4.0 or 7.0. This was reasonably caused by the ability of vermiculite to neutralise (buffer) the pH of the supplied nutrient solution (pH 2.0-7.0). Due to its buffering capacity, vermiculite cannot be used as growth support to study the effect of acidity on nodulation and plant growth.

Somatic growth of mussels Mytilus edulis in field studies compared to predictions using BEG, DEB, and SFG models

Science.gov (United States)

Larsen, Poul S.; Filgueira, Ramón; Riisgård, Hans Ulrik

2014-04-01

Prediction of somatic growth of blue mussels, Mytilus edulis, based on the data from 2 field-growth studies of mussels in suspended net-bags in Danish waters was made by 3 models: the bioenergetic growth (BEG), the dynamic energy budget (DEB), and the scope for growth (SFG). Here, the standard BEG model has been expanded to include the temperature dependence of filtration rate and respiration and an ad hoc modification to ensure a smooth transition to zero ingestion as chlorophyll a (chl a) concentration approaches zero, both guided by published data. The first 21-day field study was conducted at nearly constant environmental conditions with a mean chl a concentration of C = 2.7 μg L- 1, and the observed monotonous growth in the dry weight of soft parts was best predicted by DEB while BEG and SFG models produced lower growth. The second 165-day field study was affected by large variations in chl a and temperature, and the observed growth varied accordingly, but nevertheless, DEB and SFG predicted monotonous growth in good agreement with the mean pattern while BEG mimicked the field data in response to observed changes in chl a concentration and temperature. The general features of the models were that DEB produced the best average predictions, SFG mostly underestimated growth, whereas only BEG was sensitive to variations in chl a concentration and temperature. DEB and SFG models rely on the calibration of the half-saturation coefficient to optimize the food ingestion function term to that of observed growth, and BEG is independent of observed actual growth as its predictions solely rely on the time history of the local chl a concentration and temperature.

Missing Rings, Synchronous Growth, and Ecological Disturbance in a 36-Year Pitch Pine (Pinus rigida) Provenance Study

Science.gov (United States)

Caroline Leland; John Hom; Nicholas Skowronski; F. Thomas Ledig; Paul J. Krusic; Edward R. Cook; Dario Martin-Benito; Javier Martin-Fernandez; Neil Pederson; Dusan Gomory

2016-01-01

Provenance studies are an increasingly important analog for understanding how trees adapted to particular climatic conditions might respond to climate change. Dendrochronological analysis can illuminate differences among trees from different seed sources in terms of absolute annual growth and sensitivity to external growth factors. We analyzed annual radial growth of...

Intrauterine Cannabis Exposure Affects Fetal Growth Trajectories: The Generation R Study

Science.gov (United States)

El Marroun, Hanan; Tiemeier, Henning; Steegers, Eric A. P.; Jaddoe, Vincent W. V.; Hofman, Albert; Verhulst, Frank C.; van den Brink, Wim; Huizink, Anja C.

2009-01-01

Objective: Cannabis is the most commonly consumed illicit drug among pregnant women. Intrauterine exposure to cannabis may result in risks for the developing fetus. The importance of intrauterine growth on subsequent psychological and behavioral child development has been demonstrated. This study examined the relation between maternal cannabis use…

A Study on the Feeding and Growth Patterns of the Variegated ...

African Journals Online (AJOL)

The feeding and growth patterns of the variegated grasshopper, Zonocerus variegatus (L) were studied in the laboratory to ascertain the amount of food intake, food assimilated and faeces excreted by its nymph and adult stages on a mixed diet of Cassava (Manihot esculenta) and Siam weed (Chromolaena odorata) leaves.

Growth and study of barium oxalate single crystals in agar gel

Indian Academy of Sciences (India)

Barium oxalate was grown in agar gel at ambient temperature. The effect of various parameters like gel concentration, gel setting time and concentration of the reactants on the growth of these crystals was studied. Prismatic platy shaped spherulites and dendrites were obtained. The grown crystals were characterized by ...

International standards for fetal growth based on serial ultrasound measurements: the Fetal Growth Longitudinal Study of the INTERGROWTH-21st Project.

Science.gov (United States)

Papageorghiou, Aris T; Ohuma, Eric O; Altman, Douglas G; Todros, Tullia; Cheikh Ismail, Leila; Lambert, Ann; Jaffer, Yasmin A; Bertino, Enrico; Gravett, Michael G; Purwar, Manorama; Noble, J Alison; Pang, Ruyan; Victora, Cesar G; Barros, Fernando C; Carvalho, Maria; Salomon, Laurent J; Bhutta, Zulfiqar A; Kennedy, Stephen H; Villar, José

2014-09-06

In 2006, WHO produced international growth standards for infants and children up to age 5 years on the basis of recommendations from a WHO expert committee. Using the same methods and conceptual approach, the Fetal Growth Longitudinal Study (FGLS), part of the INTERGROWTH-21(st) Project, aimed to develop international growth and size standards for fetuses. The multicentre, population-based FGLS assessed fetal growth in geographically defined urban populations in eight countries, in which most of the health and nutritional needs of mothers were met and adequate antenatal care was provided. We used ultrasound to take fetal anthropometric measurements prospectively from 14 weeks and 0 days of gestation until birth in a cohort of women with adequate health and nutritional status who were at low risk of intrauterine growth restriction. All women had a reliable estimate of gestational age confirmed by ultrasound measurement of fetal crown-rump length in the first trimester. The five primary ultrasound measures of fetal growth--head circumference, biparietal diameter, occipitofrontal diameter, abdominal circumference, and femur length--were obtained every 5 weeks (within 1 week either side) from 14 weeks to 42 weeks of gestation. The best fitting curves for the five measures were selected using second-degree fractional polynomials and further modelled in a multilevel framework to account for the longitudinal design of the study. We screened 13,108 women commencing antenatal care at less than 14 weeks and 0 days of gestation, of whom 4607 (35%) were eligible. 4321 (94%) eligible women had pregnancies without major complications and delivered live singletons without congenital malformations (the analysis population). We documented very low maternal and perinatal mortality and morbidity, confirming that the participants were at low risk of adverse outcomes. For each of the five fetal growth measures, the mean differences between the observed and smoothed centiles for the 3rd

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.

Science.gov (United States)

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Chen, Yu; Lin, Yung-Chen; Qu, Yongquan; Bai, Jingwei; Ivanov, Ivan A; Liu, Gang; Huang, Yu; Duan, Xiangfeng

2012-01-28

Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH 4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH 4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm 2 V -1 s -1 at room temperature.

Study on growth kinetics of hexadecylamine capped CdSe nanoparticles using its electronic properties

Energy Technology Data Exchange (ETDEWEB)

Oluwafemi, S.O., E-mail: tobi_55@yahoo.co [Department of Chemistry, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa); Revaprasadu, N. [Department of Chemistry, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa)

2009-05-01

The growth kinetics of hexadecylamine (HDA) capped CdSe synthesised via a novel, mild, effective, and facile non-organometallic route was studied using its electronic properties. The emission and optical maxima of all the nanoparticles synthesised are blue-shifted as the reaction time increases indicating decrease in particle size. The UV spectra show distinct excitonic features which can be attributed to the first electronic transition [1S{sub 3/2}(h)-1S(e)] occurring in CdSe nanoparticles with band-edge luminescence in their emission spectra. The extinction coefficient was determined for convenient and accurate measurements of the concentration of the nanocrystals. Nucleation is very fast and well separated from particle growth under this reaction condition. Two distinguishable stages of growth were observed: an early stage 0-10 min characterised by fast growth, with narrow size distribution and the late stage characterised by slow growth with slight defocusing of size distribution and large particle sizes. The diameter of the size ranges from 2.2 to 3.0 nm. About 94% of the available monomer concentration was consumed during the growth and the solubility of 3.0 nm CdSe in hexadecylamine is measured to be 9.216x10{sup -7} M{sup 2} at 433 deg. K.

Use of mathematical models in the study of bodily growth in GIFT strain Nile tilapia

Directory of Open Access Journals (Sweden)

Alda Lúcia de Lima Amancio

Full Text Available The objective of this study was to evaluate the accuracy of five mathematical models (Gompertz, Logistic, Linear Hyperbolic, Quadratic and Quadratic Logarithmic to describe the growth curve of GIFT strain Nile tilapia, Oreochromis niloticus, and to characterize the growth trajectory of body parts. To do this, 1,000 fingerlings, with an initial weight of 2.4 g were placed into 20 brick tanks of 2 m³ each, at a density of 25 fish m-3, for 180 days. The animals were fed daily, using the protein levels and number of meals appropriate to each stage. Every two weeks 20 fish were randomly sampled, submitted to a fasting period of 48 h and then slaughtered by thermal shock, in order to determine the weight of the whole fish, the skin without scales, skinless fillets, heart, liver, gills and gastrointestinal tract. The Gompertz and Logistic models presented the best fit to the growth curve for live weight, fillet and skin, however the Logistic model underestimated the asymptotic weights. Therefore, to describe the growth curve in GIFT strain Nile tilapia, the Gompertz model is suggested. According to the parameters estimated by the Gompertz model, Nile tilapia reach the age for maximum growth of the fillet and skin before that of body weight. Among the organs studied, growth of the gastrointestinal tract and gills takes place earlier than that of the heart and liver.

Concerted actions of insulin-like growth factor 1, testosterone, and estradiol on peripubertal bone growth: a 7-year longitudinal study.

Science.gov (United States)

Xu, Leiting; Wang, Qin; Wang, Qingju; Lyytikäinen, Arja; Mikkola, Tuija; Völgyi, Eszter; Cheng, Shumei; Wiklund, Petri; Munukka, Eveliina; Nicholson, Patrick; Alén, Markku; Cheng, Sulin

2011-09-01

A better understanding of how bone growth is regulated during peripuberty is important for optimizing the attainment of peak bone mass and for the prevention of osteoporosis in later life. In this report we used hierarchical models to evaluate the associations of insulin-like growth factor 1 (IGF-1), estradiol (E(2) ), and testosterone (T) with peripubertal bone growth in a 7-year longitudinal study. Two-hundred and fifty-eight healthy girls were assessed at baseline (mean age 11.2 years) and at 1, 2, 3.5, and 7 years. Serum concentrations of IGF-1, E(2) , and T were determined. Musculoskeletal properties in the left lower leg were measured using peripheral quantitative computed tomography (pQCT). Serum levels of IGF-1, E(2) , and T increased dramatically before menarche, whereas they decreased, plateaued, or increased at a lower rate, respectively, after menarche. IGF-1 level was positively associated with periosteal circumference (PC) and total bone mineral content (tBMC) throughout peripuberty but not after adjustment for muscle cross-sectional area (mCSA). On the other hand, IGF-1 was associated with tibial length (TL) independently of mCSA before menarche. T was positively associated with TL, PC, tBMC, and cortical volumetric bone mineral density, independent of mCSA, before menarche but not after. E(2) was associated with TL positively before menarche but negatively after menarche. These findings suggest that during puberty, circulating IGF-1 promotes bone periosteal apposition and mass accrual indirectly, probably through stimulating muscle growth, whereas the effects of sex steroids on bone growth differ before and after menarche, presenting a biphasic pattern. Hence the concerted actions of these hormones are essential for optimal bone development in peripuberty. Copyright © 2011 American Society for Bone and Mineral Research.

Growth hormone treatment during pregnancy in a growth hormone-deficient woman

DEFF Research Database (Denmark)

Müller, J; Starup, J; Christiansen, J S

1995-01-01

Information on the course and outcome of pregnancies in growth hormone (GH)-deficient patients is sparse, and GH treatment during pregnancy in such women has not been described previously. We have studied fetal growth and serum levels of GH, insulin-like growth factor I (IGF-I) and IGF binding...

Insights into crystal growth rates from a study of orbicular granitoids from western Australia

Science.gov (United States)

Zhang, J.; Lee, C. T.

2017-12-01

The purpose of this study is to develop new tools for constraining crystal growth rate in geologic systems. Of interest is the growth of crystals in magmatic systems because crystallization changes the rheology of a magma as well as provides surfaces on which bubbles can nucleate. To explore crystal growth in more detail, we conducted a case study of orbicular granitoids from western Australia. The orbicules occur as spheroids dispersed in a granitic matrix. Most orbicules have at least two to three concentric bands, composed of elongate and radially oriented hornblende surrounded by interstitial plagioclase. We show that mineral modes and hence bulk composition at the scale of the band is homogeneous from rim to core. Crystal number density decreases and crystal size increases from rim to core. These observations suggest that the orbicules crystallized rapidly from rim to core. We hypothesize that the orbicules are blobs of hot dioritic liquid injected into a cold granitic magma and subsequently cooled and solidified. Crystals stop growing when the mass transport rate tends to zero due to the low temperature. We estimated cooling timescales based on conductive cooling models, constraining crystal growth rates to be 10-6 to 10-5 m/s. We also show that the oscillatory banding is controlled by disequilibrium crystallization, wherein hornblende preferentially crystallizes, resulting in the diffusive growth of a chemical boundary layer enriched in plagioclase component, which in turns results in crystallization of plagioclase. We show that the correlation between the width of each crystallization couplet (band) with distance from orbicule rim is linear, with the slope corresponding to the square root of the ratio between chemical diffusivity in the growth medium and thermal diffusivity. We estimate chemical diffusivity of 2*10-7 m2/s, which is remarkably fast for silicate liquids but reasonable for diffusion in hot aqueous fluids, suggesting that crystallization

Study of growth kinetic and modeling of ethanol production by ...

African Journals Online (AJOL)

... coefficient (0.96299). Based on Leudking-Piret model, it could be concluded that ethanol batch fermentation is a non-growth associated process. Key words: Kinetic parameters, simulation, cell growth, ethanol, Saccharomyces cerevisiae.

Rearing Mozambique tilapia in tidally-changing salinities: Effects on growth and the growth hormone/insulin-like growth factor I axis.

Science.gov (United States)

Moorman, Benjamin P; Yamaguchi, Yoko; Lerner, Darren T; Grau, E Gordon; Seale, Andre P

2016-08-01

The growth hormone (GH)/insulin-like growth factor (IGF) axis plays a central role in the regulation of growth in teleosts and has been shown to be affected by acclimation salinity. This study was aimed at characterizing the effects of rearing tilapia, Oreochromis mossambicus, in a tidally-changing salinity on the GH/IGF axis and growth. Tilapia were raised in fresh water (FW), seawater (SW), or in a tidally-changing environment, in which salinity is switched between FW (TF) and SW (TS) every 6h, for 4months. Growth was measured over all time points recorded and fish reared in a tidally-changing environment grew significantly faster than other groups. The levels of circulating growth hormone (GH), insulin-like growth factor I (IGF-I), pituitary GH mRNA, gene expression of IGF-I, IGF-II, and growth hormone receptor 2 (GHR) in the muscle and liver were also determined. Plasma IGF-I was higher in FW and TS than in SW and TF tilapia. Pituitary GH mRNA was higher in TF and TS than in FW and SW tilapia. Gene expression of IGF-I in the liver and of GHR in both the muscle and liver changed between TF and TS fish. Fish growth was positively correlated with GH mRNA expression in the pituitary, and GHR mRNA expression in muscle and liver tissues. Our study indicates that rearing fish under tidally-changing salinities elicits a distinct pattern of endocrine regulation from that observed in fish reared in steady-state conditions, and may provide a new approach to increase tilapia growth rate and study the regulation of growth in euryhaline fish. Copyright © 2016 Elsevier Inc. All rights reserved.

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

Science.gov (United States)

Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-03-01

The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

Protein crystal growth studies at the Center for Macromolecular Crystallography

International Nuclear Information System (INIS)

DeLucas, Lawrence J.; Long, Marianna M.; Moore, Karen M.; Harrington, Michael; McDonald, William T.; Smith, Craig D.; Bray, Terry; Lewis, Johanna; Crysel, William B.; Weise, Lance D.

2000-01-01

The Center for Macromolecular Crystallography (CMC) has been involved in fundamental studies of protein crystal growth (PCG) in microgravity and in our earth-based laboratories. A large group of co-investigators from academia and industry participated in these experiments by providing protein samples and by performing the x-ray crystallographic analysis. These studies have clearly demonstrated the usefulness of a microgravity environment for enhancing the quality and size of protein crystals. Review of the vapor diffusion (VDA) PCG results from nineteen space shuttle missions is given in this paper

The role of phytochrome A and gibberellins in growth under long and short day conditions: Studies in hybrid aspen

Energy Technology Data Exchange (ETDEWEB)

Eriksson, M.E. [Swedish Univ. of Agricultural Sciences, Umeaa (Sweden). Dept. of Forest Genetics and Plant Physiology

2000-07-01

This thesis addresses questions concerning the regulation of growth and, specifically, the cessation of growth in response to short days in deciduous tree species. The model tree used in the studies was hybrid aspen (Populus tremula L. x P. tremuloides Michx.). We have exploited the possibility of transforming this species to modulate the level of expression of target genes using over-expression and antisense techniques. The target genes in the studies were the photoreceptor phytochrome A (phyA) and gibberellin 20-oxidase (GA 20-oxidase), the latter being a highly regulated enzyme involved in the biosynthesis of gibberellins (GAs). The photoreceptor phyA has been implicated in photoperiodic regulation of growth, while GAs may regulate the physiological response further downstream. The endogenous expression of these genes has been investigated in parallel with studies of various plants with ectopic and reduced levels of expression. The main focus has been on the early stages of induction of growth cessation and its physiological and molecular mechanisms. Studies of hybrid aspen plants with an increased or reduced expression of phyA, show this receptor to mediate the photoperiodic regulation of growth. Plants with ectopic expression could not stop growing despite drastically shortened photoperiods, while the antisense plants showed the reverse phenotype, with a higher sensitivity resulting in earlier cessation of growth. The role of GAs in growth inhibition was also addressed using plants with a reduction in GA levels. These plants showed early cessation of growth and dormancy, and thus an increased sensitivity toward daylength. Conversely, plants with increased rates of GA biosynthesis showed increased growth and stopped growing much later. Furthermore, increases in GA biosynthesis, resulting in high levels of GAs have a major impact on growth. Plants with high GA levels have increased elongation and diameter growth, due to higher rates of cell production in the

Growth Factors and Tension-Induced Skeletal Muscle Growth

Science.gov (United States)

Vandenburgh, Herman H.

1994-01-01

The project investigated biochemical mechanisms to enhance skeletal muscle growth, and developed a computer based mechanical cell stimulator system. The biochemicals investigated in this study were insulin/(Insulin like Growth Factor) IGF-1 and Steroids. In order to analyze which growth factors are essential for stretch-induced muscle growth in vitro, we developed a defined, serum-free medium in which the differentiated, cultured avian muscle fibers could be maintained for extended periods of time. The defined medium (muscle maintenance medium, MM medium) maintains the nitrogen balance of the myofibers for 3 to 7 days, based on myofiber diameter measurements and myosin heavy chain content. Insulin and IGF-1, but not IGF-2, induced pronounced myofiber hypertrophy when added to this medium. In 5 to 7 days, muscle fiber diameters increase by 71 % to 98% compared to untreated controls. Mechanical stimulation of the avian muscle fibers in MM medium increased the sensitivity of the cells to insulin and IGF-1, based on a leftward shift of the insulin dose/response curve for protein synthesis rates. (54). We developed a ligand binding assay for IGF-1 binding proteins and found that the avian skeletal muscle cultures produced three major species of 31, 36 and 43 kD molecular weight (54) Stretch of the myofibers was found to have no significant effect on the efflux of IGF-1 binding proteins, but addition of exogenous collagen stimulated IGF-1 binding protein production 1.5 to 5 fold. Steroid hormones have a profound effect on muscle protein turnover rates in vivo, with the stress-related glucocorticoids inducing rapid skeletal muscle atrophy while androgenic steroids induce skeletal muscle growth. Exercise in humans and animals reduces the catabolic effects of glucocorticoids and may enhance the anabolic effects of androgenic steroids on skeletal muscle. In our continuing work on the involvement of exogenrus growth factors in stretch-induced avian skeletal muscle growth, we

Theoretical and Numerical Study of Growth in Multi-Component Alloys

Science.gov (United States)

Lahiri, Arka; Abinandanan, T. A.; Choudhury, Abhik

2017-10-01

In multi-component systems, during diffusion-controlled growth of a precipitate from a supersaturated matrix, differential diffusivities lead to a selection of tie-line compositions different from the thermodynamic tie-line containing the alloy composition. In this paper, we address the multi-component version of the growth problem by extending Zener's theory, and derive analytical expressions for predicting tie-lines and composition profiles in the matrix during growth of planar, cylindrical, and spherical precipitates for independent as well as coupled diffusion of solutes in the scaling regime. We confirm our calculations by sharp interface and phase-field simulations in a ternary setting, in which we also extend the tie-line and growth constant predictions for two well-known limiting cases, namely partition and negligible partition under local equilibrium (PLE and NPLE).

Design and descriptive results of the "Growth, Exercise and Nutrition Epidemiological Study In preSchoolers": The GENESIS Study

Directory of Open Access Journals (Sweden)

Manios Yannis

2006-02-01

Full Text Available Abstract Background The Growth, Exercise and Nutrition Epidemiological Study in preSchoolers (GENESIS attempts to evaluate the food and nutrient intakes, as well as growth and development of a representative sample of Greek toddlers and preschool children. In the current work the study design, data collection procedures and some preliminary data of the GENESIS study are presented. Methods From April 2003 to July 2004, 1218 males and 1156 females 1 to 5 years old, stratified by parental educational level (Census 1999, were examined from 105 nurseries in five counties. Approximately 300 demographic, lifestyle, physical activity, dietary, anthropometrical and DNA variables have been recorded from the study population (children and parents. Results Regarding anthropometrical indices, boys were found to be taller than girls at all ages (P Conclusion The prevalence of overweight in the current preschool population is considerably high. Future but more extensive analyses of the GENESIS data will be able to reveal the interactions of the parameters leading to this phenomenon.

Studying secondary growth and bast fiber development: the hemp hypocotyl peeks behind the wall

Directory of Open Access Journals (Sweden)

Marc Behr

2016-11-01

Full Text Available Cannabis sativa L. is an annual herbaceous crop grown for the production of long extraxylary fibers, the bast fibers, rich in cellulose and used both in the textile and biocomposite sectors. Despite being herbaceous, hemp undergoes secondary growth and this is well exemplified by the hypocotyl. The hypocotyl was already shown to be a suitable model to study secondary growth in other herbaceous species, namely Arabidopsis thaliana and it shows an important practical advantage, i.e. elongation and radial thickening are temporally separated. This study focuses on the mechanisms marking the transition from primary to secondary growth in the hemp hypocotyl by analysing the suite of events accompanying vascular tissue and bast fiber development. Transcriptomics, imaging and quantification of phytohormones were carried out on four representative developmental stages (i.e. 6-9-15-20 days after sowing to provide a comprehensive overview of the events associated with primary and secondary growth in hemp. This multidisciplinary approach provides cell wall-related snapshots of the growing hemp hypocotyl and identifies marker genes associated with the young (expansins, β-galactosidases and transcription factors involved in light-related processes and the older hypocotyl (secondary cell wall biosynthetic genes and transcription factors.

Model-supported phototrophic growth studies with Scenedesmus obtusiusculus in a flat-plate photobioreactor.

Science.gov (United States)

Koller, Anja Pia; Löwe, Hannes; Schmid, Verena; Mundt, Sabine; Weuster-Botz, Dirk

2017-02-01

Light-dependent growth of microalgae can vary remarkably depending on the cultivation system and microalgal strain. Cell size and the pigmentation of each strain, as well as reactor geometry have a great impact on absorption and scattering behavior within a photobioreactor. In this study, the light-dependent, cell-specific growth kinetics of a novel green algae isolate, Scenedesmus obtusiusculus, was studied in a LED-illuminated flat-plate photobioreactor on a lab-scale (1.8 L, 0.09 m 2 ). First, pH-controlled batch processes were performed with S. obtusiusculus at different constant incident photon flux densities. The best performance was achieved by illuminating S. obtusiusculus with 1400 μmol photons m -2  s -1 at the surface of the flat-plate photobioreactor, resulting in the highest biomass concentration (4.95 ± 0.16 g CDW  L -1 within 3.5 d) and the highest specific growth rate (0.22 h -1 ). The experimental data were used to identify the kinetic parameters of different growth models considering light inhibition for S. obtusiusculus. Light attenuation within the flat-plate photobioreactor was considered by varying light transfer models. Based on the identified kinetic growth model of S. obtusiusculus, an optimum growth rate of 0.22 h -1 was estimated at a mean integral photon flux density of 1072 μmol photons m -2  s -1 with the Beer-Lambert law and 1590 μmol photons m -2  s -1 with Schuster's light transfer model in the flat-plate photobioreactor. LED illumination was, thus, increased to keep the identified optimum mean integral photon flux density constant in the batch process assuming Schuster's light transfer model. Compared to the same constant incident photon flux density (1590 μmol photons m -2  s -1 ), biomass concentration was up to 24% higher using the lighting profile until a dry cell mass concentration of 14.4 ± 1.4 g CDW  L -1 was reached. Afterward, the biomass concentration remained constant

Monte Carlo studies of domain growth in two dimensions

International Nuclear Information System (INIS)

Yaldram, K.; Ahsan Khan, M.

1983-07-01

Monte Carlo simulations have been carried out to study the effect of temperature on the kinetics of domain growth. The concept of ''spatial entropy'' is introduced. It is shown that ''spatial entropy'' of the domain can be used to give a measure of the roughening of the domain. Most of the roughening is achieved during the initial time (t< or approx. 10 Monte Carlo cycles), the rate of roughening being greater for higher temperatures. For later times the roughening of the domain for different temperatures proceeds at essentially the same rate. (author)

Isolation, purification and studies on radiation induced biochemical and physiological changes of bovine growth hormone in animal

International Nuclear Information System (INIS)

Abdel-Salam, H.M.S.

1997-01-01

Growth hormone has a great importance in the field of animal physiology. Bovine growth hormone was extracted by alteration of the hydrogen ion concentration of phosphate buffer extract of frozen pituitary glands. The extracted bovine growth hormone has similar absorption peaks at UV and infrared spectra, bands of the same location on polyacrylamide gel electrophoresis plate and had a molecular weight exactly as the standard bovine growth hormone and equal to 20.9 KD. Labelling of bovine growth hormone with 131 I was carried out with fast and least expensive method. The biological and physiological effects of labelled and non labelled bovine growth hormone were studied on rabbits. The labelled bovine growth hormone decreased the biological and physiological effects of the hormone. Bovine growth hormone (unlabelled) and different effects on growth performance traits, body chemical composition (water, fat,protein and ash), and also on the serum biochemical parameters. We conclude that the bovine growth hormone affects on the biological and physiological properties but this depends on the dose, type of delivery of hormone, time of treatment, and the diet content of the animal. 6 tabs., 13.2 figs., 110 refs

Growth of maize coleoptiles in the presence of natural and synthetic growth regulators. Growth correlations

Directory of Open Access Journals (Sweden)

Ewa Raczek

2014-01-01

Full Text Available The effect of natural (IAA, FC, ABA and synthetic (2,4-D growth substances on the increase of the fresh weight of maize coleoptile segments and change of the pH of the incubation medium, accepted here as criteria of maize coleoptile growth, was studied. The growth of maize coleoptiles depended on the concentration of the growth substances, as well as, on the composition of the incubation medium. The highest stimulation of coleoptile growth was seen with FC at a concentration of 10-4M, whereas ABA at 10-3 M gave the highest inhibition of maize coleoptile fresh weight increase and caused alkalization of the medium. The presence of K+ ions in the incubation medium enhanced the stimulatory effect of IAA and FC on the increase of the coleoptile fresh weight, whereas the presence of these ions and phosphate buffer abolished the growth-promoting effect of IAA and FC. The best correlation of the "fresh weight" and "pH" effects was found in the case of the growth of maize coleoptiles in the presence of FC (rxy = 0.67. The inhibition of maize coleoptile growth in the presence of high concentrations of IAA can be explained by the destructive effect of natural auxin at these concentrations on the integrity of mitochondrial membranes, and therefore on the normal functioning of mitochondria.

AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

International Nuclear Information System (INIS)

Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

1997-01-01

c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

NARCIS (Netherlands)

Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

2008-01-01

We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an

1.55-μm range InAs/InP (100) quantum dot telecom devices

NARCIS (Netherlands)

Nötzel, R.; Anantathanasarn, S.; Veldhoven, van P.J.; Barbarin, Y.; Bente, E.A.J.M.; Smit, M.K.; Cade, N.I.; Kamada, H.; Satpati, B.; Trampert, A.; Dhar, N.K.; Dutta, A.K.; Islam, M.S.

2007-01-01

Lasing and sharp line emission in the 1.55-µm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved through the insertion of ultra-thin (1-2

Early growth patterns and cardiometabolic function at the age of 5 in a multiethnic birth cohort: the ABCD study

Directory of Open Access Journals (Sweden)

Vrijkotte Tanja GM

2009-03-01

Full Text Available Abstract Background The relation between fetal growth retardation and cardiovascular and metabolic diseases in later life has been demonstrated in many studies. However, debate exists around the potential independent role of postnatal growth acceleration. Furthermore, it is unknown whether a potential effect of growth acceleration on cardiovascular and metabolic function is confined to certain timeframes. The present study assesses the (predictive role of prenatal and postnatal growth on 5 components of cardiovascular and metabolic function in children aged 5. The potential association of timing of postnatal growth acceleration with these outcomes will be explored. Methods and design Prospective multiethnic community-based cohort study of 8266 pregnancies (Amsterdam Born Children and their Development, ABCD study. Up till now, anthropometry of 5104 children from the original cohort was followed during the first 5 years of life, with additional information about birth weight, pregnancy duration, and various potential confounding variables. At age 5, various components of cardiovascular and metabolic function are being measured. Outcome variables are body size, body composition and fat distribution, insulin sensitivity, lipid profile, blood pressure and autonomic regulation of cardiovascular function. Discussion This study will be one of the first population-based prospective cohort studies to address the association between measures of both prenatal and postnatal growth and various components of cardiovascular and metabolic function. Specific attention is paid to the timing of acceleration in growth and its potential association with the outcome variables. Importantly, the longitudinal design of this study gives us the opportunity to gain more insight into growth trajectories associated with adverse outcomes in later life. If identified as an independent risk factor, this provides further basis for the hypothesis that accelerated growth during

Domain-growth kinetics and aspects of pinning: A Monte Carlo simulation study

DEFF Research Database (Denmark)

Castán, T.; Lindgård, Per-Anker

1991-01-01

By means of Monte Carlo computer simulations we study the domain-growth kinetics after a quench across a first-order line to very low and moderate temperatures in a multidegenerate system with nonconserved order parameter. The model is a continuous spin model relevant for martensitic transformati......By means of Monte Carlo computer simulations we study the domain-growth kinetics after a quench across a first-order line to very low and moderate temperatures in a multidegenerate system with nonconserved order parameter. The model is a continuous spin model relevant for martensitic...... to cross over from n = 1/4 at T approximately 0 to n = 1/2 with temperature for models with pinnings of types (a) and (b). For topological pinnings at T approximately 0, n is consistent with n = 1/8, a value conceivable for several levels of hierarchically interrelated domain-wall movement. When...

Studies on esterase isozymes and mycelium growth speed of ganoderma lucidum carried by Shenzhou spaceship

International Nuclear Information System (INIS)

Qi Jianjun; Chen Xiangdong; Lan Jin

2002-01-01

The esterase isozymes and mycelium growth speed of four Ganoderma lucidum strains carried by Shenzhou spaceship were studied. The results showed that different effects occurred to esterase and mycelium growth speed. The SX, S3 esterase band had changed compared with their control CX, C3, respectively, but there were no differences between SH and CH, S4 and C4. The growth speed of S4 strain was faster than its control C4, SX strain lower than its control CX, and there were no difference between SH and CH, S3 and C3

Study of initiation and growth of stress corrosion cracks. Quantitative characterization and modeling

International Nuclear Information System (INIS)

Peyrat, Christine

1997-01-01

A phenomenological study of Stress Corrosion Cracking (SCC) cracks initiation and growth was carried out on a Z 2 CN 18.10 stainless steel in a boiling aqueous magnesium chloride solution at 153 deg. C. The characterization method exploits the morphological information (cracks shape and size distribution) available on a specimen after SCC test. This method, independent of any mechanistic hypothesis, led to the analytical representation of the growth rate of a given crack as a function of its depth and of the density of deeper cracks. The presence of this last parameter could be the expression of a 'shielding effect' of mechanical origin, exerted by the cracks of large size. A 'true initiation' rate was calculated by an extrapolation based on the analytical expression of the growth rate. This analytical representation of cracks initiation and growth accounts for the saturation observed in the experimental determination of the 'apparent initiation'. As time goes, the number of cracks deeper than a given threshold depth tends towards a limit which depends very strongly on the chosen threshold. This saturation effect can be interpreted as exclusively due to the way the small cracks propagate, as the 'true initiation' rate can be expressed versus time by a simple power law. In the case of slow strain rate tests, it is shown that the kinetic parameters characteristic of initiation and growth depend on the applied elongation rate. In particular, the initial crack growth rate increases with elongation rate. The validity domains of the proposed expressions have been specified by means of SCC tests carried out under different types of mechanical loading. (author) [fr

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

Science.gov (United States)

Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

2017-11-01

The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

Longitudinal growth changes in subjects with open-bite tendency: a retrospective study.

Science.gov (United States)

Phelan, Angie; Franchi, Lorenzo; Baccetti, Tiziano; Darendeliler, M Ali; McNamara, James A

2014-01-01

This study was a cephalometric evaluation of the growth changes in untreated subjects with minimal overbite at 4 time points during 4 developmental stages from the early mixed dentition to the permanent dentition, as well as from the prepubertal phase to young adulthood. A sample of 24 untreated subjects with minimal overbite (<1.5 mm) was selected retrospectively from the University of Michigan Growth Study and the Denver Child Growth Study. The sample was followed longitudinally from about 9 years of age through 17 years of age. Dentofacial changes at the 4 times (T1-T4), defined by the cervical vertebral maturation method, were analyzed on lateral cephalograms. Nonparametric statistical analysis was used for comparisons. Overbite on average increased by 2.3 mm during the overall observation period. Improvement occurred during the prepubertal interval (T1-T2; 2.4 mm), whereas no significant changes occurred in the pubertal and postpubertal stages. From prepubertal ages to young adulthood, the open-bite tendency improved in 91% of the subjects, with self-correction in 75%. Logistic regression analysis on the cephalometric variables at T1 with the value of overbite at T4 did not show a statistically significant correlation. Subjects with an open-bite tendency show improvement of their occlusal condition during the prepubertal stage, but there is no significant improvement after this. These results provide useful indications for appropriate orthodontic treatment timing for patients with an open-bite tendency. Copyright © 2014 American Association of Orthodontists. Published by Mosby, Inc. All rights reserved.

Kinetic study of nucleation and crystal growth during oxalic precipitation in the nuclear industry

International Nuclear Information System (INIS)

Andrieu, Murielle

1999-01-01

In spite of an extensive use in chemical industry, most of precipitation processes are based on global and empirical knowledge. However, in the recent years, fundamental and phenomenological theories have been developed and they can be used to better understand the mechanisms of precipitation of plutonium IV oxalate, which is a significant stage of the irradiated fuel reprocessing. For this reason, appropriate methods were developed to study nucleation and crystal growth kinetics in a nuclear environment under a wide range of operating conditions. Each phenomena was studied individually in order to reduce the free parameters of the System. This study bears on the oxalates of plutonium and elements which simulate plutonium behaviour during the precipitation, neodymium III and uranium IV. A compact apparatus of a specific construction was used for nucleation measurements in accordance with the Nielsen's method. The state of the mixing was characterised at the reactor scale (macro-mixing) and at molecular scale (micro-mixing). The experimental results for the studied oxalates are in good agreement with the Volmer and Weber's theory. We propose primary nucleation kinetic laws over a wide range of operating conditions (temperature, non-stoichiometric conditions, acidity...). An original method, using a high seed charge, was developed for the determination of crystal growth kinetics, in a batch crystallizer. The crystal growth rate is first order with respect to the supersaturation and the kinetic constant follows an Arrhenius type relation with activation energies of 14, 29 and 36 kJ.mol -1 for respectively neodymium III, uranium IV and plutonium IV oxalates. The overall growth process is surface integration controlled, with a screw dislocation mechanism. [fr

Engagement as a Driver of Growth of Online Health Forums: Observational Study

Science.gov (United States)

Gopalsamy, Rahul; Semenov, Alexander; Pasiliao, Eduardo; McIntosh, Scott

2017-01-01

Background The emerging research on nurturing the growth of online communities posits that it is in part attributed to network effects, wherein every increase in the volume of user-generated content increases the value of the community in the eyes of its potential new members. The recently introduced metric engagement capacity offers a means of quantitatively assessing the ability of online platform users to engage each other into generating content; meanwhile, the quantity engagement value is useful for quantifying communication-based platform use. If the claim that higher engagement leads to accelerated growth holds true for online health forums (OHFs), then engagement tracking should become an important tool in the arsenal of OHF managers. Indeed, it might allow for quantifying the ability of an OHF to exploit network effects, thus predicting the OHF’s future success. Objective This study aimed to empirically analyze the relationship between internal OHF use (quantified using engagement measurement), and external growth. Methods We collected data from 7 OHFs posted between the years 1999 and 2016. Longitudinal analyses were conducted by evaluating engagement in the OHFs over time. We analyzed 2-way causality effects between the engagement value and metrics evaluating OHF growth using Granger causality tests. User activity metrics per week were correlated with engagement metrics, followed by linear regression analyses. Results Observational data showed a 1-way causal relationship between the OHF engagement value and reach (P=.02). We detected a 2-way causal relationship between the engagement value and delurking, with further analysis indicating that the engagement value was more likely to cause delurking (Pdepending on how much one user engaged another) to develop personal connections. Finally, we found that the more engaging an OHF user was in a given week, the more likely (up to 2 times, depending on their ability to engage others) they were to remain active

Growth factor involvement in tension-induced skeletal muscle growth

Science.gov (United States)

Vandenburgh, Herman H.

1993-01-01

Long-term manned space travel will require a better understanding of skeletal muscle atrophy which results from microgravity. Astronaut strength and dexterity must be maintained for normal mission operations and for emergency situations. Although exercise in space slows the rate of muscle loss, it does not prevent it. A biochemical understanding of how gravity/tension/exercise help to maintain muscle size by altering protein synthesis and/or degradation rate should ultimately allow pharmacological intervention to prevent muscle atrophy in microgravity. The overall objective is to examine some of the basic biochemical processes involved in tension-induced muscle growth. With an experimental in vitro system, the role of exogenous and endogenous muscle growth factors in mechanically stimulated muscle growth are examined. Differentiated avian skeletal myofibers can be 'exercised' in tissue culture using a newly developed dynamic mechanical cell stimulator device which simulates different muscle activity patterns. Patterns of mechanical activity which significantly affect muscle growth and metabolic characteristics were found. Both exogenous and endogenous growth factors are essential for tension-induced muscle growth. Exogenous growth factors found in serum, such as insulin, insulin-like growth factors, and steroids, are important regulators of muscle protein turnover rates and mechanically-induced muscle growth. Endogenous growth factors are synthesized and released into the culture medium when muscle cells are mechanically stimulated. At least one family of mechanically induced endogenous factors, the prostaglandins, help to regulate the rates of protein turnover in muscle cells. Endogenously synthesized IGF-1 is another. The interaction of muscle mechanical activity and these growth factors in the regulation of muscle protein turnover rates with our in vitro model system is studied.

The impact of economic growth on health care utilization: a longitudinal study in rural Vietnam.

Science.gov (United States)

Thoa, Nguyen Thi Minh; Thanh, Nguyen Xuan; Chuc, Nguyen Thi Kim; Lindholm, Lars

2013-03-16

In many developing countries, including Vietnam, out-of-pocket payment is the principal source of health financing. The economic growth is widening the gap between rich and poor people in many aspects, including health care utilization. While inequities in health between high- and low-income groups have been well investigated, this study aims to investigate how the health care utilization changes when the economic condition is changing at a household level. We analysed a panel data of 11,260 households in a rural district of Vietnam. Of the sample, 74.4% having an income increase between 2003 and 2007 were defined as households with economic growth. We used a double-differences propensity score matching technique to compare the changes in health care expenditure as percentage of total expenditure and health care utilization from 2003 to 2005, from 2003 to 2007, and from 2005 to 2007, between households with and without economic growth. Households with economic growth spent less percentage of their expenditure for health care, but used more provincial/central hospitals (higher quality health care services) than households without economic growth. The differences were statistically significant. The results suggest that households with economic growth are better off also in terms of health services utilization. Efforts for reducing inequalities in health should therefore consider the inequality in income growth over time.

Comparative study on growth performance of two shade trees in tea agroforestry system.

Science.gov (United States)

Kalita, Rinku Moni; Das, Ashesh Kumar; Nath, Arun Jyoti

2014-07-01

An attempt was made to study the stem growth of two native dominant shade tree species in terms of annual girth increment in three dominant girth size categories for two years in tea agroforestry system of Barak Valley, Assam. Fifty two sampling plots of 0.1 ha size were established and all trees exceeding 10 cm girth over bark at breast height (1.37 m) were uniquely identified, tagged, and annually measured for girth increment, using metal tape during December 2010-12. Albizia lebbeck and A. odoratissima were dominant shade tree species registering 82% of appearance of the individuals studied. The girth class was categorized into six different categories where 30-50 cm, 50-70 cm and 70-90 cm were dominating girth classes and selected for increment study. Mean annual girth increment ranged from 1.41 cm in Albizia odoratissima (50-70 cm girth class) to 2.97 cm in Albizia lebbeck (70-90 cm girth class) for the first year and 1.70 cm in Albizia odoratissima (50-70 cm girth class) to 3.09 cm in Albizia lebbeck (70-90 cm girth class) for the second year. Albizia lebbeck exhibited better growth in all prominent girth classes as compared to Albizia odoratissima during the observation period. The two shade tree species showed similar trend of growth in both the years of observation and significant difference in girth increment.

Inequality, trust and growth : An experimental study

NARCIS (Netherlands)

Sadrieh, A.; Verbon, H.A.A.

2002-01-01

In a three player dynamic public goods experiment, social output today determines production possibilities tomorrow.In each period, players choose to sabotage, to co-operate, or to play best response.Sabotage harms social output and growth.Mutual co-operation maximises both.The property rights to

Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

Energy Technology Data Exchange (ETDEWEB)

Epelbaum, B.M.; Heimann, P.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany)

2005-05-01

The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates appears to be aluminum oxynitride poisoning of seed surface leading to polycrystalline growth at 1750-1850 C. This is well below the lowest growth temperature appropriate for physical vapor transport (PVT) of bulk AlN, which is about 2150 C. Contrary, heteroepitaxial growth of AlN on SiC is relatively easy to achieve because of natural formation of a thin molten layer on the seed surface and VLS growth of AlN via the molten buffer layer. The most critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion. Optimization of seeded growth process can be achieved by proper choice of SiC seed orientation and by use of ultra-pure starting material. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Trajectories and models of individual growth

Directory of Open Access Journals (Sweden)

Arseniy Karkach

2006-11-01

Full Text Available It has long been recognized that the patterns of growth play an important role in the evolution of age trajectories of fertility and mortality (Williams, 1957. Life history studies would benefit from a better understanding of strategies and mechanisms of growth, but still no comparative research on individual growth strategies has been conducted. Growth patterns and methods have been shaped by evolution and a great variety of them are observed. Two distinct patterns - determinate and indeterminate growth - are of a special interest for these studies since they present qualitatively different outcomes of evolution. We attempt to draw together studies covering growth in plant and animal species across a wide range of phyla focusing primarily on the noted qualitative features. We also review mathematical descriptions of growth, namely empirical growth curves and growth models, and discuss the directions of future research.

Timing of Maternal Depression and Sex-Specific Child Growth, the Upstate KIDS Study.

Science.gov (United States)

Park, Hyojun; Sundaram, Rajeshwari; Gilman, Stephen E; Bell, Griffith; Louis, Germaine M Buck; Yeung, Edwina H

2018-01-01

Equivocal findings have been reported on the association between maternal depression and children's growth, possibly because of the limited attention to its disproportionate impact by child sex. The relationship between the timing of maternal depression and children's growth was assessed in a population-based prospective birth cohort, with particular attention to sex differences. The Upstate KIDS Study comprised 4,394 children followed through 3 years of age from 2008 to 2010. Maternal depression was measured antenatally by linkage with hospital discharge records before delivery and postnatally by depressive symptoms reported from questionnaires. Children's growth was measured by sex- and age-specific weight, height, weight for height, and BMI. Adjusted linear mixed effects models were used to estimate growth outcomes for the full sample and separately by plurality and sex. Antenatal depression was associated with lower weight for age (-0.24 z score units; 95% confidence interval [CI]: -0.43, -0.05) and height for age (-0.26 z score units; 95% CI: -0.51, -0.02) among singleton boys. Postnatal depressive symptoms were associated with higher weight for height (0.21 z score units; 95% CI: 0.01, 0.42) among singleton girls. The findings of this study suggest that antenatal depression was associated with lower weight and smaller height only for boys, whereas postnatal depressive symptoms were associated with higher weight for height only for girls. The timing of depression and the mechanisms of sex-specific responses require further examination. Published 2017. This article is a U.S. Government work and is in the public domain in the USA.

Layered growth model and epitaxial growth structures for SiCAlN alloys

International Nuclear Information System (INIS)

Liu Zhaoqing; Ni Jun; Su Xiaoao; Dai Zhenhong

2009-01-01

Epitaxial growth structures for (SiC) 1-x (AlN) x alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x=1/6 ,1/5 ,1/4 ,1/3 , and 1/2 in the layered growth phase diagrams. We have also calculated the electronic properties of the short periodical SiCAlN alloys predicted by our layered growth model. The results show that various ordered structures of (SiC) 1-x (AlN) x alloys with the band gaps over a wide range are possible to be synthesized by epitaxial growth.

Diet, growth, and obesity development throughout childhood in the Avon Longitudinal Study of Parents and Children

Science.gov (United States)

Jones, Louise R.

2015-01-01

Publications from the Avon Longitudinal Study of Parents and Children covering diet, growth, and obesity development during childhood are reviewed. Diet was assessed by food frequency questionnaires and food records. Growth data were collected by routine measurements, and in standardized clinics, body fatness was assessed by bioelectrical impedance and DXA (dual-energy X-ray absorptiometry) scans. Diets changed dramatically during the preschool period with an increase in the intake of free (added) sugars (12.3% rising to 16.4% of energy) that remained similar until adolescence. This was due to increased intake of energy-dense, nutrient-poor foods. Two periods of rapid growth were identified; infancy and mid-childhood (ages 7–11 y) and both were associated with obesity development. Diets with high energy density were associated with increasing fat mass from mid-childhood until adolescence. Genetic and dietary factors showed independent associations with increasing adiposity. At all ages studied, there were dietary inequalities related to maternal educational attainment that may influence inequalities found in obesity development. The Avon Longitudinal Study of Parents and Children has provided valuable insights into how disparities in diet and growth may affect the development of ill health in adulthood. PMID:26395342

Local Application of Growth Hormone to Enhance Osseointegration in Osteoporotic Bones: A Morphometric and Densitometric Study.

Science.gov (United States)

Martin-Monge, Elena; Tresguerres, Isabel F; Clemente, Celia; Tresguerres, Jesús Af

The aim of this study was to assess the effect of local application of growth hormone on osseointegration of dental implants inserted in osteoporotic bones. Twenty female New Zealand rabbits were used in this study. Ten were ovariectomized and fed a low-calcium diet for 6 weeks, and the others remained intact. A titanium implant was inserted into each tibia, in both groups. In half of the rabbits, 2 IU of growth hormone was placed into the ostectomy prior to the implant insertion. Two weeks after implant surgery, all animals were sacrificed. Tibiae were dissected from soft tissues, and included in methacrylate to be studied under light microscopy. Bone-to-implant contact (BIC) and bone mineral density (BMD) were measured by morphometric and densitometric analysis, respectively. Multifactorial analysis of variance (ANOVA) was used for statistical evaluation. P growth hormone was able to increase the BIC in the ovariectomized group, with statistically significant differences with respect to the control group (P growth hormone at the moment of titanium implant insertion in rabbit tibiae significantly enhanced the BIC around titanium implants 15 days after the implantation in this experimental osteoporotic animal model, without affecting the BMD.

Postnatal Growth in a Cohort of Sardinian Intrauterine Growth-Restricted Infants

Directory of Open Access Journals (Sweden)

Maria Grazia Clemente

2017-01-01

Full Text Available Recent studies have shown that infants with intrauterine growth restriction (IUGR undergo catch-up growth during infancy. The aim of our study was to evaluate the postnatal growth in a cohort of IUGR infants born in a tertiary-level Obstetric University Hospital of Northern Sardinia. An observational retrospective study was conducted on 12 IUGR (group A and 12 control infants (group B by measuring the anthropometric parameters of weight (W, length (L and head circumference (HC from birth to the 3rd postnatal year. At birth, significant differences were found between group A and group B with regard to all the auxological parameters (W, mean 1846.6 versus 3170.8 g, p < 0.0001; HC, 30.1 versus 34.4 cm, p < 0.0001; L, mean 43.4 versus 49.4 cm, p < 0.0001. During the 1st year, 8 of 12 (70% IUGR infants exhibited a significant catch-up growth in the 3 anthropometric parameters and a regular growth until the 3rd year of follow-up. The majority but not all infants born with IUGR in our series showed significant postnatal catch-up growth essentially during the first 12 months of life. An improved knowledge of the causes of IUGR will help to develop measures for its prevention and individualized treatment.

Submicron resolution X-ray diffraction from periodically patterned GaAs nanorods grown onto Ge[111

Energy Technology Data Exchange (ETDEWEB)

Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Solid State Physics, Siegen University (Germany); Grenzer, Joerg [FZ-Dresden Rossendorf, Dresden (Germany); Paetzelt, Hendrik; Gottschalch, Volker; Bauer, Jens [Solid State Chemistry, University of Leipzig (Germany)

2009-08-15

We present high-resolution X-ray diffraction pattern of periodic GaAs nanorods (NRs) ensembles and individual GaAs NRs grown catalyst-free throughout a pre-patterned amorphous SiN{sub x} mask onto Ge[111]B surfaces by selective-area MOVPE method. To the best of our knowledge this is the first report about nano-structure X-ray characterization growth on non-polar substrate. The experiment has been performed at home laboratory and using synchrotron radiation using a micro-sized beam prepared by compound refractive lenses. Due to the non-polar character of the substrate the shapes of NRs appear not uniform and vary between deformed hexagonal and trigonal in symmetry. Because the average diameter of NRs equals the experimental resolution certain cuts through slightly inclined edges or corners of individual NRs with lateral size of about 225 nm could be selected using spatially resolved reciprocal space mapping. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

Science.gov (United States)

Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

2017-10-01

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

Adding Trauma-Informed Care at a Bereavement Camp to Facilitate Posttraumatic Growth: A Controlled Outcome Study

Directory of Open Access Journals (Sweden)

Irene Searles McClatchey

2017-09-01

Full Text Available Background: Studies on posttraumatic growth (PTG among bereaved youth are rare; outcome studies on how to facilitate PTG among this population are even more scarce. Objectives: This study examined the addition of trauma-informed care to bereavement interventions to foster PTG in youth attending a weekend-long bereavement camp. Method: A total of 105 participants completed standardized measures of posttraumatic growth and posttraumatic stress disorder after which 52 of the participants took part in a camp session. Ninety-five of the participants from both groups were post-tested four weeks after the camp session. Results: Multiple Regression showed that PTG scores were significantly greater at posttest for the treatment group. No significant changes in PTSD were found in either group, although the presence of dissociative symptoms decreased significantly among campers in the treatment group. Conclusions: Findings suggest trauma-informed care may increase posttraumatic growth among youth coping with loss. Implications for future studies and clinical practice are discussed

Fractal pattern growth simulation in electrodeposition and study of the shifting of center of mass

International Nuclear Information System (INIS)

Shaikh, Yusuf H.; Khan, A.R.; Pathan, J.M.; Patil, Aruna; Behere, S.H.

2009-01-01

We presented simulation of fractal pattern in electrodeposition (Diffusion limited aggregation) using concept of off lattice walk. It is seen that the growth patterns are based on a parameter called 'bias'. This parameter 'bias' controls the growth of patterns similar to that of electric field in electrodeposition technique. In present study the fractal patterns are grown for different values of 'bias'. Dendritic patterns grown at lower value of 'bias' comprises open structure and show limited branching. As the bias is increased the growth tends to be dense and show more crowded branching. Box counting was implemented to calculate fractal dimension. The structural and textural complexities and are compared with the experimental observations. It was also noted that in the evolution of DLA patterns, the center of mass of the growth is shifted slightly. We tracked the position of the center of mass of simulated electro deposits under different electric field conditions. The center of mass exhibit random walk like patterns and it wanders around the origin or the starting point of the growth.

Monitoring of urban growth and its related environmental impacts: Niamey case study

Science.gov (United States)

Perotti, Luigi; Tankari Dan-Badjo, Abdourahamane; De Luca, Domenico Antonio; Antonella Dino, Giovanna; Lasagna, Manuela; Spadafora, Francesco; Yadji, Guero; Konaté, Moussa

2016-04-01

The present contribution is about a preliminary study of the evolution of Niamey city (Niger) during last decades. Such research is part of an UNICOO project (funded by the University of Turin) and connected to the Edulink Cooperation Project (R.U.S.S.A.D.E.), a multidisciplinary project between Italy, Niger, Burkina Faso and Tchad funded on ACP- EU cooperation program in Higher Education. Recent advances in remote sensing, both in satellite hardware technology (i.e. image availability) and image processing algorithm development, provide opportunities for collection and analysis of multitemporal information on urban form and size that can be useful for policy and planning. In spite of these developments, there are also limitations to remote sensing and its application in practice. Some opportunities for, and limitations on, monitoring urban growth using remote sensing data are shown in the present contribution; moreover examples of environmental impacts of urban growth, as monitored with remote sensing, are provided. Niamey is the capital of Niger and is the first city in the country in size and economic importance. Its population increased gradually, from about 3,000 units in 1930 to about 30,000 in 1960, rising to 250,000 in 1980 and, according to estimates, to 800,000 units in 2000. Its patterns of population distribution, livelihoods, and its dominant role within the national economy of Niger make it a good representative case study for West Africa. This case study will consider the recent historical context of continued urban growth and will assess potential future impacts of settlement patterns. The rapid growth of Niamey in the last decades brought relative prosperity but it certainly affected patterns of land use within the city and the emerging urban system. After a preliminary sketch of the georesources in the city (qualitative and quantitative characterization of the surface water and groundwater, and of aggregates), an analyses of the urban growth and

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Zíková, Markéta; Pangrác, Jiří; Oswald, Jiří; Kuldová, Karla; Vyskočil, Jan; Hulicius, Eduard

2013-01-01

Roč. 370, MAY (2013), s. 303-306 ISSN 0022-0248 R&D Projects: GA ČR GAP102/10/1201 Institutional research plan: CEZ:AV0Z10100521 Keywords : band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.693, year: 2013

FTIR absorption reflection study of biomimetic growth of phosphates on titanium implants

Science.gov (United States)

Stoch, A.; Jastrzębski, W.; Brożek, A.; Stoch, J.; Szaraniec, J.; Trybalska, B.; Kmita, G.

2000-11-01

Titanium has been used for many medical applications; however, its joining to a living bone still is not satisfactorily good, challenging appropriate investigations. The aim of this work was to generate chemical modifications at its surface such that in vivo conditions, heterogeneous nucleation, and then growth of apatite from the body fluid could be easily induced and successfully performed. For this purpose, on the titanium samples, the oxide sublayers containing titanium, calcium and silicon (TCS) were deposited from a suitable solution using the sol-gel deep-coating procedure. Dried samples were heated at 400°C then cooled and thermostatically held in synthetic body fluids (SBF, SBFIII) under physiological conditions to mimic the natural process of apatite formation. Changes in surface composition of TCS sublayers caused by the heating were studied with XPS. Infrared spectroscopy and scanning electron microscopy monitored successive steps of apatite growth. It was found that in SBF, at the precoated titanium surface, nucleation and growth of the apatite containing carbonate took place. In SBFIII, for a higher concentration of calcium ions in comparison with SBF, a much-enhanced growth of the apatite free of carbonate was observed. TCS precoatings applied on stainless steel and Cr-Co-Mo alloy (Micromed) act also as bioactive interfaces with high ability to nucleation of biologically equivalent apatite. Biomimetic formation of this apatite on biologically inactive materials can be an important step in implant surgery.

The use of 32P to study root growth of soybean as affected by soil compaction

International Nuclear Information System (INIS)

Sisworo, Elsje L.; Sisworo, Widjang H.; Syaukat, Sri Harti; Wemay, Johannis; Haryanto

1996-01-01

Two greenhouse and two field experiments have been conducted to study the effect of soil compaction on root and plant growth of soybean, by using 32 P in the form of carrier free KH 2 32 PO 4 solution. In the greenhouse experiment it was clearly shown that by increasing soil compaction the growth of roots and shoots was increasingly inhibited. The growth of roots was expressed in √% arcsin converted from 32 P activity (counts per minute, cpm) in the shoots and 32 P activity in the shoots (cpm) without convertion. Plant growth was expressed in plant height, number of leaves, dry weight of pods and shoots. In the field experiment, it was shown distinctively that root growth in the 15 cm soil depth was inhibited whith the increase of soil compaction. Similar with the greenhouse experiments the of plants of roots was expressed in cpm 32 P of roots, shoots, and pods, while, the growth of plants was expressed in plant height, number of pods, and dry weight of pods, seeds, and stover. (author). 19 refs, 4 tabs, 6 figs

Interfrm Cooperation Strategy of Hyper-Growth and Stable-Growth ICT Firms in Sweden

Directory of Open Access Journals (Sweden)

Monika Golonka

2017-01-01

Full Text Available Purpose: The main purpose of this study was to compare the phenomenon of interfrm cooperation strategy in both hyper-growth, and stable-growth knowledge and technology–intensive frms, in a country characterized by a high level of generalized trust: Sweden. Methodology: Qualitative methods were incorporated: direct semistructured interviews with top managers in 13 ICT frms (8 hyper-growth and 5 stable-growth, analyzis of reports, corporate websites and press releases. Furthermore, interviews in 3 expert frms in the industry were conducted, facilitating interfrm cooperation. Conclusions: There were signifcant differences in interfrm cooperation strategy in two distinguished groups of the frms: hyper-growth, and stable-growth. Managers’ individual approaches to uncertainty, strategy and cooperation might be more important than institutional settings. The ICT frms operate in a constantly changing global environment and local context seems to have only a minor impact on the rules of the game in the industry. Research limitations: This study was a qualitative explorative approach as an introduction to further empirical research. Originality: The study presents an interfrm cooperation phenomenon incorporating different perspectives and settings. It contributes to alliance portfolio literature (forming and managing of alliance portfolio in a different context/country/industry, and enhances understanding of frm strategies characterized by different growth rates.

Growth, spectral and thermal studies of ibuprofen crystals

Energy Technology Data Exchange (ETDEWEB)

Ramukutty, S.; Ramachandran, E. [Department of Physics, Thiruvalluvar College, Papanasam (India)

2012-01-15

RS -Ibuprofen was crystallized for the first time in silica gel under suitable pH conditions by reduction of solubility method. The grown crystals were characterized by single crystal X-ray diffraction and density measurement. The functional groups present in the crystal were identified using Fourier transform infrared spectroscopy. Optical bandgap energy of ibuprofen was estimated as 3.19(3) eV from UV-Vis spectrum. Thermogravimetric analysis revealed that ibuprofen is thermally stable upto 102.9 C and the initial loss of mass was due to evaporation only. Morphological study showed that the growth is prominent along b-axis and the prominent face is {l_brace}100{r_brace}. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of Study Trend of Growth and Characterization of CdZnTe Single Crystal

International Nuclear Information System (INIS)

Lee, Kyu Hong; Ha, Jang Ho; Kim, Han Soo

2011-05-01

CdZnTe (CZT) alloys are very important semiconducting compounds due to their use in several strategic applications in medical, space, and security devices, especially, radiation detector. Specific problems of the bulk crystal growth are still to be solved. However, since industries require excellent bulk CZT crystals, a strong effort is being organized worldwide to optimize the growth process and obtain better material. This report presents the study trend of the bulk CZT crystal growth and characteristics. After the first section where the problems connected to the complicated phase diagram of CZT are presented, the second section describes the various general physical and chemical properties, together with the compensation problems of the CZT material. In the third section, various growth methods are described, paying attention to the defects generated in the different cases. Further, the annealing process which is an essential step for improving the crystal quality is described. In the last section, the general material characterization methods are presented, as a scientific approach for assessing the quality of the bulk crystal

Intrahousehold resource allocation and child growth in Mozambique: an ethnographic case-control study.

Science.gov (United States)

Pfeiffer, J; Gloyd, S; Ramirez Li, L

2001-07-01

This study examines the effect of intrahousehold cash income control and decision-making patterns on child growth in the rural town of Sussundenga in Manica Province, Mozambique. A case-control study design was used to examine the influence of men's and women's disaggregated cash incomes on child growth. The research tested whether greater maternal share of household cash income was associated with (1) increased maternal decision-making and bargaining power in the household, and (2) better child growth. Fifty case households, with children 1-4 years old exhibiting poor growth, were matched with 50 control households of similar socioeconomic status in which all children under five demonstrated healthy growth. Data were gathered on gender-specific income generation and expenditure, specific intrahousehold allocation processes, diet, and sociodemographic variables using a formal survey. Key informant interviews, focus groups, and observation over one year provided ethnographic context for the case-control findings. Case-control differences were analyzed using McNemar's test, paired t-test, and conditional logistic regression. In spite of matching households for socioeconomic status, control household incomes were still slightly greater than cases. Male spouse income was also higher among controls while maternal income, and maternal proportion of household income, were not significantly different. Household meat, fish and poultry consumption, and maternal education were significantly greater among control households than cases. Greater maternal share of household income was not associated with greater maternal decision-making around cash. However, mothers must spend what little cash they earn on daily food supplies and usually request additional cash from spouses to cover these costs. There is evidence that if mothers earn enough to cover these socially prescribed costs, they can spend cash for other needs. Above this threshold, women's earnings may confer more

Aid Effectiveness on Growth

DEFF Research Database (Denmark)

Doucouliagos, Hristos; Paldam, Martin

The AEL (aid effectiveness literature) is econo¬metric studies of the macroeconomic effects of development aid. It contains about 100 papers of which 68 are reduced form estimates of theeffect of aid on growth in the recipient country. The raw data show that growth is unconnected to aid......, but the AEL has put so much structure on the data that all results possible have emerged. The present meta study considers both the best-set of the 68 papers and the all-set of 543 regressions published. Both sets have a positive average aid-growth elasticity, but it is small and insignificant: The AEL has...... betweenstudies is real. In particular, the aid-growth association is stronger for Asian countries, and the aid-growth association is shown to have been weaker in the 1970s....

Animal studies on growth and development.

Science.gov (United States)

Lerchl, Alexander

2011-12-01

Despite the fact that no plausible biological mechanism has yet been identified how electromagnetic fields below recommended exposure limits could negatively affect health of animals or humans, many experiments have been performed in various animal species, mainly mice and rats, to investigate the possible effects on growth and development. While older studies often suffered from sub-optimal exposure conditions, recent investigations, using sophisticated exposure devices and thus preventing thermal effects, have been performed without these limitations. In principle, two types of studies can be addressed: those which have investigated the carcinogenic or co-carcinogenic effects of exposure in developing animals, and those which have been done in developing animals without the focus on carcinogenic or co-carcinogenic effects. In both areas, the vast majority of publications did not show adverse effects. The largest study so far has been done in normal mice which have been chronically exposed to UMTS signals up to 1.3 W/kg SAR, thus 16 times higher than the whole-body exposure limit for humans. Even after four generations, no systematic or dose-dependent alterations in development or fertility could be found, supporting the view that negative effects on humans are very unlikely. Ongoing experiments in our laboratory investigate the effects of head-only exposure in rats (up to 10 W/kg local SAR) which are exposed from 14 days of age daily for 2 h. A battery of behavioral tests is performed in young, adult, and pre-senile animals. The results will help to clarify possible effects of exposure on brain development. Copyright © 2011 Elsevier Ltd. All rights reserved.

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis.

Science.gov (United States)

Shih, Po-Hsun; Wu, Sheng Yun

2017-07-21

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.

Phase-field-lattice Boltzmann study for lamellar eutectic growth in a natural convection melt

Directory of Open Access Journals (Sweden)

Ang Zhang

2017-11-01

Full Text Available In the present study, the influence of natural convection on the lamellar eutectic growth is determined by a phase-field-lattice Boltzmann study for Al-Cu eutectic alloy. The mass difference resulting from concentration difference led to the fluid flow, and a robust parallel and adaptive mesh refinement algorithm was employed to improve the computational efficiency without any compromising accuracy. Results show that the existence of natural convection would affect the growth undercooling and thus control the interface shape by adjusting the lamellar width. In particular, by alternating the magnitude of the solute expansion coefficient, the strength of the natural convection is changed. Corresponding microstructure patterns are discussed and compared with those under no-convection conditions.

Allometries of Maximum Growth Rate versus Body Mass at Maximum Growth Indicate That Non-Avian Dinosaurs Had Growth Rates Typical of Fast Growing Ectothermic Sauropsids

Science.gov (United States)

Werner, Jan; Griebeler, Eva Maria

2014-01-01

We tested if growth rates of recent taxa are unequivocally separated between endotherms and ectotherms, and compared these to dinosaurian growth rates. We therefore performed linear regression analyses on the log-transformed maximum growth rate against log-transformed body mass at maximum growth for extant altricial birds, precocial birds, eutherians, marsupials, reptiles, fishes and dinosaurs. Regression models of precocial birds (and fishes) strongly differed from Case’s study (1978), which is often used to compare dinosaurian growth rates to those of extant vertebrates. For all taxonomic groups, the slope of 0.75 expected from the Metabolic Theory of Ecology was statistically supported. To compare growth rates between taxonomic groups we therefore used regressions with this fixed slope and group-specific intercepts. On average, maximum growth rates of ectotherms were about 10 (reptiles) to 20 (fishes) times (in comparison to mammals) or even 45 (reptiles) to 100 (fishes) times (in comparison to birds) lower than in endotherms. While on average all taxa were clearly separated from each other, individual growth rates overlapped between several taxa and even between endotherms and ectotherms. Dinosaurs had growth rates intermediate between similar sized/scaled-up reptiles and mammals, but a much lower rate than scaled-up birds. All dinosaurian growth rates were within the range of extant reptiles and mammals, and were lower than those of birds. Under the assumption that growth rate and metabolic rate are indeed linked, our results suggest two alternative interpretations. Compared to other sauropsids, the growth rates of studied dinosaurs clearly indicate that they had an ectothermic rather than an endothermic metabolic rate. Compared to other vertebrate growth rates, the overall high variability in growth rates of extant groups and the high overlap between individual growth rates of endothermic and ectothermic extant species make it impossible to rule out either

Allometries of maximum growth rate versus body mass at maximum growth indicate that non-avian dinosaurs had growth rates typical of fast growing ectothermic sauropsids.

Science.gov (United States)

Werner, Jan; Griebeler, Eva Maria

2014-01-01

We tested if growth rates of recent taxa are unequivocally separated between endotherms and ectotherms, and compared these to dinosaurian growth rates. We therefore performed linear regression analyses on the log-transformed maximum growth rate against log-transformed body mass at maximum growth for extant altricial birds, precocial birds, eutherians, marsupials, reptiles, fishes and dinosaurs. Regression models of precocial birds (and fishes) strongly differed from Case's study (1978), which is often used to compare dinosaurian growth rates to those of extant vertebrates. For all taxonomic groups, the slope of 0.75 expected from the Metabolic Theory of Ecology was statistically supported. To compare growth rates between taxonomic groups we therefore used regressions with this fixed slope and group-specific intercepts. On average, maximum growth rates of ectotherms were about 10 (reptiles) to 20 (fishes) times (in comparison to mammals) or even 45 (reptiles) to 100 (fishes) times (in comparison to birds) lower than in endotherms. While on average all taxa were clearly separated from each other, individual growth rates overlapped between several taxa and even between endotherms and ectotherms. Dinosaurs had growth rates intermediate between similar sized/scaled-up reptiles and mammals, but a much lower rate than scaled-up birds. All dinosaurian growth rates were within the range of extant reptiles and mammals, and were lower than those of birds. Under the assumption that growth rate and metabolic rate are indeed linked, our results suggest two alternative interpretations. Compared to other sauropsids, the growth rates of studied dinosaurs clearly indicate that they had an ectothermic rather than an endothermic metabolic rate. Compared to other vertebrate growth rates, the overall high variability in growth rates of extant groups and the high overlap between individual growth rates of endothermic and ectothermic extant species make it impossible to rule out either of

Allometries of maximum growth rate versus body mass at maximum growth indicate that non-avian dinosaurs had growth rates typical of fast growing ectothermic sauropsids.

Directory of Open Access Journals (Sweden)

Jan Werner

Full Text Available We tested if growth rates of recent taxa are unequivocally separated between endotherms and ectotherms, and compared these to dinosaurian growth rates. We therefore performed linear regression analyses on the log-transformed maximum growth rate against log-transformed body mass at maximum growth for extant altricial birds, precocial birds, eutherians, marsupials, reptiles, fishes and dinosaurs. Regression models of precocial birds (and fishes strongly differed from Case's study (1978, which is often used to compare dinosaurian growth rates to those of extant vertebrates. For all taxonomic groups, the slope of 0.75 expected from the Metabolic Theory of Ecology was statistically supported. To compare growth rates between taxonomic groups we therefore used regressions with this fixed slope and group-specific intercepts. On average, maximum growth rates of ectotherms were about 10 (reptiles to 20 (fishes times (in comparison to mammals or even 45 (reptiles to 100 (fishes times (in comparison to birds lower than in endotherms. While on average all taxa were clearly separated from each other, individual growth rates overlapped between several taxa and even between endotherms and ectotherms. Dinosaurs had growth rates intermediate between similar sized/scaled-up reptiles and mammals, but a much lower rate than scaled-up birds. All dinosaurian growth rates were within the range of extant reptiles and mammals, and were lower than those of birds. Under the assumption that growth rate and metabolic rate are indeed linked, our results suggest two alternative interpretations. Compared to other sauropsids, the growth rates of studied dinosaurs clearly indicate that they had an ectothermic rather than an endothermic metabolic rate. Compared to other vertebrate growth rates, the overall high variability in growth rates of extant groups and the high overlap between individual growth rates of endothermic and ectothermic extant species make it impossible to rule

X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

International Nuclear Information System (INIS)

McLeod, K.; Kumar, S.; Dutta, N.K.; Smart, R.St.C.; Voelcker, N.H.; Anderson, G.I.

2010-01-01

Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

Energy Technology Data Exchange (ETDEWEB)

McLeod, K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Kumar, S., E-mail: sunil.kumar@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Dutta, N.K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Smart, R.St.C. [Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes, SA 5095 (Australia); Voelcker, N.H. [School of Chemistry, Physics and Earth Sciences, Flinders University of South Australia, GPO Box 2100, Adelaide 5001 (Australia); Anderson, G.I. [School of Veterinary Science, University of Adelaide, Adelaide, SA 5005 (Australia)

2010-09-15

Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 {mu}m in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

Placental Growth during Normal Pregnancy - A Magnetic Resonance Imaging Study

DEFF Research Database (Denmark)

Langhoff, Lasse; Grønbeck, Lene; von Huth, Sebastian

2017-01-01

were measured in both sagittal and transversal slices. All placentas were weighed after delivery to make a comparative study. RESULTS: Sixteen of the 20 women had increasing placental volumes from the 14th to 38th week of gestation. The 6th and 7th scan showed that 4 women had placentas of the same...... was 640 g (range 500-787 g). All pregnancies were carried to term, resulting in the delivery of healthy infants with good correlation between placental size and birth weight (R = 0.56, p = 0.009). CONCLUSION: Placental growth was measured systematically in a longitudinal study through the second and third...

A Longitudinal Study and Color Rating System of Acquisition Cost Growth

Science.gov (United States)

2017-03-23

cost growth analysis. Ways in which this research can be carried forward include: • Collect more SAR data to further populate our research database... Growth Cory N. D’Amico Follow this and additional works at: https://scholar.afit.edu/etd Part of the Finance and Financial Management Commons This...and Color Rating System of Acquisition Cost Growth " (2017). Theses and Dissertations. 781. https://scholar.afit.edu/etd/781 A Longitudinal

Rejuveniles and Growth

DEFF Research Database (Denmark)

Barnett, Richard C.; Bhattacharya, Joydeep

Rejuveniles are "people who cultivate tastes and mind-sets tradi- tionally associated with those younger than themselves." (Noxon, 2006) In this paper, we study a standard AK growth model of overlapping generations populated by rejuve- niles. For our purposes, rejuveniles are old agents who derive...... utility from "keeping up" their consumption with that of the current young. We find that such cross-generational keeping up is capable of generating interesting equilibrium growth dynamics, including growth cycles. No such growth dynamics is possible either in the baseline model, one where...... no such generational consumption externality exists, or for almost any other form of keeping up. Steady-state growth in a world with rejuveniles may be higher than that obtained in the baseline model....

An experimental study of the growth and hydrogen production of C. reinhardtii

Energy Technology Data Exchange (ETDEWEB)

Tamburic, B.; Burgess, S.; Nixon, P.J.; Hellgardt, K. [Imperial College London (United Kingdom)

2010-07-01

Some unicellular green algae, such as C. reinhardtii, have the ability to photosynthetically produce molecular hydrogen under anaerobic conditions. They offer a biological route to renewable, carbon-neutral hydrogen production from two of nature's most plentiful resources - sunlight and water. This process provides the additional benefit of carbon dioxide sequestration and the option of deriving valuable products from algal biomass. The growth of dense and healthy algal biomass is a prerequisite for efficient hydrogen production. This study investigates the growth of C. reinhardtii under different cyclic light regimes and at various continuous light intensities. Algal growth is characterised in terms of the cell count, chlorophyll content and optical density of the culture. The consumption of critical nutrients such as acetate and sulphate is measured by chromatography techniques. C. reinhardtii wild-type CC-124 strain is analysed in a 3 litre tubular flow photobioreactor featuring a large surface-to-volume ratio and excellent light penetration through the culture. Key parameters of the hydrogen production process are continuously monitored and controlled; these include pH, pO{sub 2}, optical density, temperature, agitation and light intensity. Gas phase hydrogen production is determined by mass spectrometry. (orig.)

Numerical Study of Operating Pressure Effect on Carbon Nanotube Growth Rate and Length Uniformity

Directory of Open Access Journals (Sweden)

B. Zahed

2014-01-01

Full Text Available Chemical Vapor Deposition (CVD is one of the most popular methods for producing Carbon Nanotubes (CNTs. The growth rate of CNTs based on CVD technique is investigated by using a numerical model based on finite volume method. Inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as carrier gas enters into a horizontal CVD reactor at atmospheric pressure. In this article the operating pressure variations are studied as the effective parameter on CNT growth rate and length uniformity.

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

Energy Technology Data Exchange (ETDEWEB)

Srinivas, S.; Bhatnagar, A.K. [Univ. of Hyderabad (India); Pinto, R. [Solid State Electronics Group, Bombay (India)] [and others

1994-12-31

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

Facet-dependent study of efficient growth of graphene on copper

Indian Academy of Sciences (India)

The growth of graphene by chemical vapour deposition (CVD) on copper is the most promising scalable method for high-quality graphene. The use of ethanol, an economic and safe precursor, for the fast growth of graphene on copper by a home-built CVD set-up was analysed. Full coverage of uniform single-layer ...

Leptin stimulates aromatase in the growth plate: limiting catch-up growth efficiency.

Science.gov (United States)

Masarwi, Majdi; Shamir, Raanan; Phillip, Moshe; Gat-Yablonski, Galia

2018-06-01

Catch-up growth (CUG) in childhood is defined as periods of growth acceleration, after the resolution of growth attenuation causes, bringing the children back to their original growth trajectory. Sometimes, however, CUG is incomplete, leading to permanent growth deficit and short stature. The aim of this study was to investigate the mechanisms that limit nutritional-CUG. Specifically, we focused on the crosstalk between leptin, increased by re-feeding, and sex hormones, which increase with age. In vivo studies were performed in young male Sprague Dawley rats fed ad libitum or subjected to 10/36 days of 40% food restriction followed by 90-120 days of re-feeding. In vitro studies were performed on ATDC5 cells. Analyses of mRNA and protein levels were done using qPCR and Western blot, respectively. CUG was complete in body weight and humerus length in animals that were food-restricted for 10 days but not for those food-restricted for 36 days. In vitro studies showed that leptin significantly increased aromatase gene expression and protein level as well as the expression of estrogen and leptin receptors in a dose- and time-dependent manner. The effect of leptin on aromatase was direct and was mediated through the MAPK/Erk, STAT3 and PI3K pathways. The crosstalk between leptin and aromatase in the growth plate suggests that re-feeding during puberty may lead to increased estrogen level and activity, and consequently, irreversible premature epiphyseal growth plate closure. These results may have important implications for the development of novel treatment strategies for short stature in children. © 2018 Society for Endocrinology.

STUDIES OF SHADING LEVELS AND NUTRITION SOURCES ON GROWTH, YIELD

Directory of Open Access Journals (Sweden)

Edi Purwanto

2011-10-01

Full Text Available Growth and biochemical content of medicinal crops are influenced by agroecosystems characteristics . The objective of this research was to determine the optimum shading level and type of fertilizer as sources of nutrition on the growth, yield, and andrographolide content of sambiloto. The experiment used Split Plot Design with basic design of Randomized Complete Block Design arranged with two treatment factors, with three replications. The first factor as the main plot was shading levels, namely without shading, 25% shading, 50% shading, and 75% shading. The second factor as the sub plot was sources of nutrition reprented by type of fertilizer, namely NPK fertilizer, cow stable fertilizer, and compost fertilizer. The result of research indicated that shading level and the kind of nutrition influenced some growth and yield variables such as number of leaves, number of branches, plant height, plant dry weight and simplisia weight, and andrographolide content. Interaction of shading level at 25% and straw compost fertilizer performed best in growth characteristics, while the highest andrographolide content resulted from the treatment combination of 50% shading level and straw compost fertilizer.

Ecotoxiocological Studies of Niger Delta Sediments using Duckweed (L. Minor) Growth Inhibition Test

International Nuclear Information System (INIS)

Olajire, A. A.; Alternburger, R.; Brack, W.

2003-01-01

This study was undertaken to evaluate the toxicity of sediments collected from the Niger Delta (Nigeria) to Lemna minor, a sensitive aquatic weed regularly used for ecotoxicological studies. Also, the study wanted to determine if L. minor can be used as an effective bioassay organism by oil companies and chemical industries in Nigeria. Essentially, the experimental approach involved exposure of L. minor under standard laboratory conditions to sediments and toxicity is presented as percent inhibition of growth of L. minor cultures after 7 days. The result of the present study showed that there is differential toxicity among the sediments analyzed, and we found that for 0.25mg/ml of growth rate (%1) decreases in the order: SDOGN(42.6%) >SDWRR (33.7%)> SDALD (20.5%) >SDUGBO (17.1%) ? SDWRR were clorotic and had lost their roots, indicating the very high toxicity of the soluble organic contaminants in these sediments. Lemna minor proved to be a practical bioassay organism because the L. minor toxicity test is simple, sensitive and cost effective

Nucleation and growth in alkaline zinc electrodeposition An Experimental and Theoretical study

Science.gov (United States)

Desai, Divyaraj

The current work seeks to investigate the nucleation and growth of zinc electrodeposition in alkaline electrolyte, which is of commercial interest to alkaline zinc batteries for energy storage. The morphology of zinc growth places a severe limitation on the typical cycle life of such batteries. The formation of mossy zinc leads to a progressive deterioration of battery performance while zinc dendrites are responsible for sudden catastrophic battery failure. The problems are identified as the nucleation-controlled formation of mossy zinc and the transport-limited formation of dendritic zinc. Consequently, this thesis work seeks to investigate and accurately simulate the conditions under which such morphologies are formed. The nucleation and early-stage growth of Zn electrodeposits is studied on carbon-coated TEM grids. At low overpotentials, the morphology develops by aggregation at two distinct length scales: ~5 nm diameter monocrystalline nanoclusters form ~50nm diameter polycrystalline aggregates, and second, the aggregates form a branched network. Epitaxial (0002) growth above a critical overpotential leads to the formation of hexagonal single-crystals. A kinetic model is provided using the rate equations of vapor solidification to simulate the evolution of the different morphologies. On solving these equations, we show that aggregation is attributed to cluster impingement and cluster diffusion while single-crystal formation is attributed to direct attachment. The formation of dendritic zinc is investigated using in-operando transmission X-ray microscopy which is a unique technique for imaging metal electrodeposits. The nucleation density of zinc nuclei is lowered using polyaniline films to cover the active nucleation sites. The effect of overpotential is investigated and the morphology shows beautiful in-operando formation of symmetric zinc crystals. A linear perturbation model was developed to predict the growth and formation of these crystals to first

Luxury-based Growth

OpenAIRE

Shiro Kuwahara

2006-01-01

Assuming that there exists a preference for luxury goods and a knowledge spillover from luxury goods production to goods production, this paper constructs an endogenous economic growth model. The model predicts two steady states: one is a steady positive growth state with regard to luxury goods production, and the other is a zero growth state in the absence of luxury goods production. Thus, this study examines the polarization of economies based on luxury goods consumption

Financial Development and Output Growth: A Panel Study for Asian Countries

Directory of Open Access Journals (Sweden)

Sangjoon Jun

2012-03-01

Full Text Available This paper investigates the relationship between financial markets and output growth for a panel of 27 Asian countries over 1960-2009. It utilizes the recently-developed panel cointegration techniques to test and estimate the long-run equilibrium relationship between real GDP and financial development proxies. Real GDP and financial development variables are found to have unit roots and to be cointegrated, based on various panel unit root tests and panel cointegration tests. We find that there is a statistically significant positive bi-directional cointegrating relationship between financial development and output growth by three distinct methods of panel cointegration estimation. Empirical findings suggest that financial market development promotes output growth and in turn output growth stimulates further financial development.

[Intra-uterine growth restriction impact on maternal serum concentration of PlGF (placental growth factor): A case control study].

Science.gov (United States)

Margossian, A; Boisson-Gaudin, C; Subtil, F; Rudigoz, R-C; Dubernard, G; Allias, F; Huissoud, C

2016-01-01

Placental growth factor (PlGF) is a pro-angiogenic factor mainly assessed in preeclampsia in which its blood concentration is decreased. The aim of this study was to dose the blood concentration of PlGF in women with fetal intra-uterine growth restriction (IUGR) without associated preeclampsia at the time of diagnosis. Case/control study: IUGR was defined by a fetal biometry with abnormal uterine and/or umbilical doppler (n=23). This group was compared to a control group of fetuses (n=25) matched for gestational age at blood sampling for the dosage of maternal seric PlGF. Women with preeclampsia were not included. The plasma PlGF concentration was 11pg/mL (IQR [11-42,8]) in the IUGR group vs 287pg/mL [135-439] in the control group (P<0.001) and this difference was available after adjustment for gestational age at the time of blood sampling (P<0.001). PlGF sensitivity and specificity for discrimination were respectively 87% (CI 95% [66-97]) and 88% (CI 95% [69-97]). Maternal serum PlGF concentrations were very low in IUGR group compared with those of the control group. Copyright © 2015. Published by Elsevier SAS.

Physical exercise during pregnancy and fetal growth measures: a study within the Danish National Birth Cohort

DEFF Research Database (Denmark)

Juhl, Mette; Olsen, Jørn; Andersen, Per Kragh

2010-01-01

OBJECTIVE: The objective of the study was to examine the association between physical exercise during pregnancy and fetal growth measures. STUDY DESIGN: Data on 79,692 liveborn singletons from the Danish National Birth Cohort were collected between 1996 and 2002. Mean differences in birthweight, ...... effects on fetal growth measures related to exercise apart from a modest decreased risk of small- and large-for-gestational-age infants. These findings do not speak against advising pregnant women to be physically active during pregnancy....

Diet, growth, and obesity development throughout childhood in the Avon Longitudinal Study of Parents and Children.