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Sample records for mott metal-insulator transition

  1. Mott metal-insulator transition in the doped Hubbard-Holstein model

    Science.gov (United States)

    Kurdestany, Jamshid Moradi; Satpathy, S.

    2017-08-01

    Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

  2. Excitonic metal-insulator phase transition of the Mott type in compressed calcium

    Science.gov (United States)

    Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

    2017-05-01

    It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

  3. On the Mott transition and the new metal-insulator transitions in doped covalent and polar crystals

    International Nuclear Information System (INIS)

    Dzhumanov, S.; Begimkulov, U.; Kurbanov, U.T.; Yavidov, B.Y.

    2001-10-01

    The Mott transition and new metal-insulator transitions (MIT's) and their distinctive features in doped covalent semiconductors and polar compounds are studied within the continuum model of extrinsic carrier self-trapping, the Hubbard impurity band model (with on-site Coulomb repulsion and screening effects) and the extrinsic (bi)polaronic band model (with short- and long-range carrier-impurity, impurity-phonon and carrier-phonon interactions and intercarrier correlation) using the appropriate tight-binding approximations and variational methods. We have shown the formation possibility of large-radius localized one- and two-carrier impurity (or defect) states and narrow impurity bands in the band gap and charge transfer gap of these carrier-doped systems. The extrinsic Mott-Hubbard and (bi)polaronic insulating gaps are calculated exactly. The proper criterions for Mott transition, extrinsic excitonic and (bi)polaronic MIT's are obtained. We have demonstrated that the Mott transition occurs in doped covalent semiconductors (i.e. Si and Ge) and some insulators with weak carrier-phonon coupling near the large-radius dopants. While, in doped polar compounds (e.g. oxide high-T c superconductors (HTSC) and related materials) the MIT's are new extrinsic (or intrinsic) (bi)polaronic MIT's. We have found that the anisotropy of the dielectric (or (bi)polaronic) properties of doped cuprate HTSC is responsible for smooth (or continuous) MIT's, stripe formation and suppression of high-T c superconductivity. Various experimental results on in-gap states, bands and MIT's in doped covalent semiconductors, oxide HTSC and related materials are in good agreement with the developed theory of Mott transition and new (bi)polaronic MIT's. (author)

  4. Metal-insulator transitions

    Science.gov (United States)

    Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

    1998-10-01

    Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

  5. Thouless energy as a unifying concept for Josephson junctions tuned through the Mott metal-insulator transition

    Science.gov (United States)

    Tahvildar-Zadeh, A. N.; Freericks, J. K.; Nikolić, B. K.

    2006-05-01

    The Thouless energy was introduced in the 1970s as a semiclassical energy for electrons diffusing through a finite-sized conductor. It turns out to be an important quantum-mechanical energy scale for many systems ranging from disordered metals to quantum chaos to quantum chromodynamics. In particular, it has been quite successful in describing the properties of Josephson junctions when the barrier is a diffusive normal-state metal. The Thouless energy concept can be generalized to insulating barriers by extracting an energy scale from the two-probe Kubo conductance of a strongly correlated electron system (metallic or insulating) via a generalized definition of the quantum-mechanical level spacing to many-body systems. This energy scale is known to determine the crossover from tunneling to Ohmic (thermally activated) transport in normal tunnel junctions. Here we use it to illustrate how the quasiclassical picture of transport in Josephson junctions is modified as the strongly correlated barrier passes through the Mott transition. Surprisingly, we find the quasiclassical form holds well beyond its putative realm of validity.

  6. Metal-insulator transitions in IZO, IGZO, and ITZO films

    Energy Technology Data Exchange (ETDEWEB)

    Makise, Kazumasa, E-mail: makise@nict.go.jp [National Institute of Information and Communications Technology, Kobe 651-2492 (Japan); Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju [Department of Physics, Kyushu University, Fukuoka 810-8560 (Japan); Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki [Central Research Laboratories, Idemitsu Kosan Co. Ltd, Chiba 299-0293 (Japan)

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  7. Quantum Critical “Opalescence” around Metal-Insulator Transitions

    Science.gov (United States)

    Misawa, Takahiro; Yamaji, Youhei; Imada, Masatoshi

    2006-08-01

    Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transition emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical temperatures can be lowered to zero, which offers a challenging quantum phase transition. We present a microscopic description of such quantum critical phenomena in two dimensions. The conventional scheme of phase transitions by Ginzburg, Landau, and Wilson is violated because of its topological nature. It offers a clear insight into the criticalities of metal-insulator transitions (MIT) associated with Mott or charge-order transitions. Fermi degeneracy involving the diverging density fluctuations generates emergent phenomena near the endpoint of the first-order MIT and must shed new light on remarkable phenomena found in correlated metals such as unconventional cuprate superconductors. It indeed accounts for the otherwise puzzling criticality of the Mott transition recently discovered in an organic conductor. We propose to accurately measure enhanced dielectric fluctuations at small wave numbers.

  8. On metal-insulator transition in cubic fullerides

    Science.gov (United States)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  9. Metal-insulator transition in vanadium dioxide

    International Nuclear Information System (INIS)

    Zylbersztejn, A.; Mott, N.F.

    1975-01-01

    The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

  10. Reentrant Metal-Insulator Transitions in Silicon -

    Science.gov (United States)

    Campbell, John William M.

    This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by

  11. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

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    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  12. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    Directory of Open Access Journals (Sweden)

    Yuichi Otsuka

    2016-03-01

    Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  13. Harnessing the metal-insulator transition for tunable metamaterials

    Science.gov (United States)

    Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2017-08-01

    The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

  14. Unusual metal-insulator transition in disordered ferromagnetic films

    International Nuclear Information System (INIS)

    Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

    2012-01-01

    We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

  15. Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

    2003-01-01

    The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

  16. The electronic structure and metal-insulator transitions in vanadium oxides

    International Nuclear Information System (INIS)

    Mossanek, Rodrigo Jose Ochekoski

    2010-01-01

    The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

  17. Holographic metal-insulator transition in higher derivative gravity

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Yi, E-mail: lingy@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai, 200444 (China); Liu, Peng, E-mail: liup51@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Wu, Jian-Pin, E-mail: jianpinwu@mail.bnu.edu.cn [Institute of Gravitation and Cosmology, Department of Physics, School of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai, 200444 (China); Zhou, Zhenhua, E-mail: zhouzh@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-03-10

    We introduce a Weyl term into the Einstein–Maxwell-Axion theory in four dimensional spacetime. Up to the first order of the Weyl coupling parameter γ, we construct charged black brane solutions without translational invariance in a perturbative manner. Among all the holographic frameworks involving higher derivative gravity, we are the first to obtain metal-insulator transitions (MIT) when varying the system parameters at zero temperature. Furthermore, we study the holographic entanglement entropy (HEE) of strip geometry in this model and find that the second order derivative of HEE with respect to the axion parameter exhibits maximization behavior near quantum critical points (QCPs) of MIT. It testifies the conjecture in that HEE itself or its derivatives can be used to diagnose quantum phase transition (QPT).

  18. On holographic disorder-driven metal-insulator transitions

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2017-01-10

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  19. On holographic disorder-driven metal-insulator transitions

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2017-01-01

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  20. Quantum criticality around metal-insulator transitions of strongly correlated electron systems

    Science.gov (United States)

    Misawa, Takahiro; Imada, Masatoshi

    2007-03-01

    Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

  1. Mott Transition of Fermionic Atoms in a Three-Dimensional Optical Trap

    International Nuclear Information System (INIS)

    Helmes, R. W.; Rosch, A.; Costi, T. A.

    2008-01-01

    We study theoretically the Mott metal-insulator transition for a system of fermionic atoms confined in a three-dimensional optical lattice and a harmonic trap. We describe an inhomogeneous system of several thousand sites using an adaptation of dynamical mean-field theory solved efficiently with the numerical renormalization group method. Above a critical value of the on-site interaction, a Mott-insulating phase appears in the system. We investigate signatures of the Mott phase in the density profile and in time-of-flight experiments

  2. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  3. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    Science.gov (United States)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  4. First-order metal-insulator transitions in the extended Hubbard model due to self-consistent screening of the effective interaction

    Science.gov (United States)

    Schüler, M.; van Loon, E. G. C. P.; Katsnelson, M. I.; Wehling, T. O.

    2018-04-01

    While the Hubbard model is the standard model to study Mott metal-insulator transitions, it is still unclear to what extent it can describe metal-insulator transitions in real solids, where nonlocal Coulomb interactions are always present. By using a variational principle, we clarify this issue for short- and long-range nonlocal Coulomb interactions for half-filled systems on bipartite lattices. We find that repulsive nonlocal interactions generally stabilize the Fermi-liquid regime. The metal-insulator phase boundary is shifted to larger interaction strengths to leading order linearly with nonlocal interactions. Importantly, nonlocal interactions can raise the order of the metal-insulator transition. We present a detailed analysis of how the dimension and geometry of the lattice as well as the temperature determine the critical nonlocal interaction leading to a first-order transition: for systems in more than two dimensions with nonzero density of states at the Fermi energy the critical nonlocal interaction is arbitrarily small; otherwise, it is finite.

  5. Metal-insulator transition in SrTi1−xVxO3 thin films

    International Nuclear Information System (INIS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-01-01

    Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

  6. A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

    Science.gov (United States)

    Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

    2017-07-27

    Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

  7. Metal-insulator transition and Frohlich conductivity in the Su-Schrieffer-Heeger model

    NARCIS (Netherlands)

    Michielsen, K.F L; de Raedt, H.A.

    1996-01-01

    A quantum molecular dynamics technique is used to study the single-particle density of states, Drude weight, optical conductivity and flux quantization in the Su-Schrieffer-Heeger (SSH) model. Our simulation data show that the SSH model has a metal-insulator transition away from half-filling. In the

  8. Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach

    International Nuclear Information System (INIS)

    Kuchinskii, E. Z.; Nekrasov, I. A.; Sadovskii, M. V.

    2008-01-01

    The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition

  9. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  10. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    OpenAIRE

    Bragaglia, Valeria; Arciprete, Fabrizio; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a f...

  11. Structurally triggered metal-insulator transition in rare-earth nickelates.

    Science.gov (United States)

    Mercy, Alain; Bieder, Jordan; Íñiguez, Jorge; Ghosez, Philippe

    2017-11-22

    Rare-earth nickelates form an intriguing series of correlated perovskite oxides. Apart from LaNiO 3 , they exhibit on cooling a sharp metal-insulator electronic phase transition, a concurrent structural phase transition, and a magnetic phase transition toward an unusual antiferromagnetic spin order. Appealing for various applications, full exploitation of these compounds is still hampered by the lack of global understanding of the interplay between their electronic, structural, and magnetic properties. Here we show from first-principles calculations that the metal-insulator transition of nickelates arises from the softening of an oxygen-breathing distortion, structurally triggered by oxygen-octahedra rotation motions. The origin of such a rare triggered mechanism is traced back in their electronic and magnetic properties, providing a united picture. We further develop a Landau model accounting for the metal-insulator transition evolution in terms of the rare-earth cations and rationalizing how to tune this transition by acting on oxygen rotation motions.

  12. Mott transitions in the periodic Anderson model

    International Nuclear Information System (INIS)

    Logan, David E; Galpin, Martin R; Mannouch, Jonathan

    2016-01-01

    The periodic Anderson model (PAM) is studied within the framework of dynamical mean-field theory, with particular emphasis on the interaction-driven Mott transition it contains, and on resultant Mott insulators of both Mott–Hubbard and charge-transfer type. The form of the PAM phase diagram is first deduced on general grounds using two exact results, over the full range of model parameters and including metallic, Mott, Kondo and band insulator phases. The effective low-energy model which describes the PAM in the vicinity of a Mott transition is then shown to be a one-band Hubbard model, with effective hoppings that are not in general solely nearest neighbour, but decay exponentially with distance. This mapping is shown to have a range of implications for the physics of the problem, from phase boundaries to single-particle dynamics; all of which are confirmed and supplemented by NRG calculations. Finally we consider the locally degenerate, non-Fermi liquid Mott insulator, to describe which requires a two-self-energy description. This is shown to yield a number of exact results for the associated local moment, charge, and interaction-renormalised levels, together with a generalisation of Luttinger’s theorem to the Mott insulator. (paper)

  13. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  14. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  15. Practical Improvements to the Lee-More Conductivity Near the Metal-Insulator Transition

    International Nuclear Information System (INIS)

    Desjarlais, Michael P.

    2000-01-01

    The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere

  16. Practical improvements to the Lee-More conductivity near the metal-insulator transition

    International Nuclear Information System (INIS)

    Desjarlais, M.P.

    2001-01-01

    The wide-range conductivity model of Lee and More is modified to allow better agreement with recent experimental data and theories for dense plasmas in the metal-insulator transition regime. Modifications primarily include a new ionization equilibrium model, consisting of a smooth blend between single ionization Saha (with a pressure ionization correction) and the generic Thomas-Fermi ionization equilibrium, a more accurate treatment of electron-neutral collisions using a polarization potential, and an empirical modification to the minimum allowed collision time. These simple modifications to the Lee-More algorithm permit a more accurate modeling of the physics near the metal-insulator transition, while preserving the generic Lee-More results elsewhere. (orig.)

  17. Magnetoconductance of amorphous Yx-Si1-x alloys near the metal-insulator transition

    International Nuclear Information System (INIS)

    Sanquer, M.; Tourbot, R.; Boucher, B.

    1989-01-01

    We have performed magnetoresistance experiments across the Metal-Insulator transition in amorphous Y x -Si 1-x alloys using very high fields (H = 40T) and very low temperatures (T = 0.05K). Different and unusual behaviours are observed and can be explained assuming that the electron-electron interaction contribution dominates at low fields and localization corrections appears at very high fields. This is the opposite situation compared to usual weak localization regime

  18. Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots.

    Science.gov (United States)

    Ward, T Z; Gai, Z; Xu, X Y; Guo, H W; Yin, L F; Shen, J

    2011-04-15

    In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.

  19. Metal-insulator transition in n-InSb under high hydrostatic pressure

    International Nuclear Information System (INIS)

    Schaller, U.; Kraak, W.; Herrmann, R.

    1984-01-01

    The effect of applying hydrostatic compression (up to 12 kbar) to the galvanomagnetic properties of pure n-InSb crystals is investigated in order to get information about the influence of hydrostatic pressure on the localization of carriers and about the metal-insulator transition. Electrical resistivity and Hall coefficient are measured as a function of pressure for various excess donor concentrations as well as a function of temperature for various pressures

  20. Probable metal-insulator transition in Ag{sub 4}SSe

    Energy Technology Data Exchange (ETDEWEB)

    Drebushchak, V.A., E-mail: dva@igm.nsc.ru [V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Pr. Ac. Koptyuga 3, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Pal’yanova, G.A.; Seryotkin, Yu.V. [V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Pr. Ac. Koptyuga 3, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Drebushchak, T.N. [Novosibirsk State University, Ul. Pirogova 2, Novosibirsk 630090 (Russian Federation); Institute of Solid State Chemistry and Mechanochemistry, SB RAS, Ul. Kutateladze 18, Novosibirsk 630128 (Russian Federation)

    2015-02-15

    Highlights: • New phase transition in Ag{sub 4}SSe was discovered with scanning calorimetry and supported with X-ray powder diffraction. • The thermal effect relates to the anomaly in electrical and thermal conductivity of Ag{sub 4}SSe. • Similar thermal and electrical effects in K{sub 3}Cu{sub 8}S{sub 6} are explained with the metal-insulator transition. - Abstract: New phase transition (285 K) in low-temperature monoclinic Ag{sub 4}SSe was found out below the α-β transition (358 K) after the measurements with differential scanning calorimetry. The transition reveals significant hysteresis (over 30 K). X-ray powder diffraction shows that the superlattice with doubled a and b parameters of the unit cell exists below the new transition point. The signs of this new phase transition can be found in thermal and electrical conductivity of Ag{sub 4}SSe published in literature. Elusive phase transition in Ag{sub 2}Se shows similar properties. The new transition is likely related to the metal-insulator type transition, like K{sub 3}Cu{sub 8}S{sub 6}.

  1. Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal-insulator transition temperature.

    Science.gov (United States)

    Zhou, Jiadong; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Dai, Lei; Cao, Chuanxiang; Luo, Hongjie; Kanahira, Minoru; Sun, Chao; Yan, Liuming

    2013-05-28

    This paper reports the successful preparation of Mg-doped VO2 nanoparticles via hydrothermal synthesis. The metal-insulator transition temperature (T(c)) decreased by approximately 2 K per at% Mg. The Tc decreased to 54 °C with 7.0 at% dopant. The composite foils made from Mg-doped VO2 particles displayed excellent visible transmittance (up to 54.2%) and solar modulation ability (up to 10.6%). In addition, the absorption edge blue-shifted from 490 nm to 440 nm at a Mg content of 3.8 at%, representing a widened optical band gap from 2.0 eV for pure VO2 to 2.4 eV at 3.8 at% doping. As a result, the colour of the Mg-doped films was modified to increase their brightness and lighten the yellow colour over that of the undoped-VO2 film. A first principle calculation was conducted to understand how dopants affect the optical, Mott phase transition and structural properties of VO2.

  2. Pressure-induced metal-insulator transition in spinel compound CuV2S4

    International Nuclear Information System (INIS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-01-01

    In order to investigate the pressure effect on electrical properties of CuV 2 S 4 , we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2 S 4 at 8 GPa

  3. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  4. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

    International Nuclear Information System (INIS)

    Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

    2009-01-01

    We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

  5. Two-order parameters theory of the metal-insulator phase transition kinetics in the magnetic field

    Science.gov (United States)

    Dubovskii, L. B.

    2018-05-01

    The metal-insulator phase transition is considered within the framework of the Ginzburg-Landau approach for the phase transition described with two coupled order parameters. One of the order parameters is the mass density which variation is responsible for the origin of nonzero overlapping of the two different electron bands and the appearance of free electron carriers. This transition is assumed to be a first-order phase one. The free electron carriers are described with the vector-function representing the second-order parameter responsible for the continuous phase transition. This order parameter determines mostly the physical properties of the metal-insulator transition and leads to a singularity of the surface tension at the metal-insulator interface. The magnetic field is involved into the consideration of the system. The magnetic field leads to new singularities of the surface tension at the metal-insulator interface and results in a drastic variation of the phase transition kinetics. A strong singularity in the surface tension results from the Landau diamagnetism and determines anomalous features of the metal-insulator transition kinetics.

  6. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    International Nuclear Information System (INIS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-01-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO 2 ) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO 2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management

  7. Metal-insulator transition in one-dimensional lattices with chaotic energy sequences

    International Nuclear Information System (INIS)

    Pinto, R.A.; Rodriguez, M.; Gonzalez, J.A.; Medina, E.

    2005-01-01

    We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter regulating the dynamic Lyapunov exponent measuring the degree of chaos. We observe the effect of chaotic sequences on the localization length, conductance, conductance distribution and wave function, finding evidence of a metal-insulator transition (MIT) at a critical degree of chaos. The one-dimensional metallic phase is characterized by a Gaussian conductance distribution and exhibits a peculiar non-selfaveraging

  8. Metal-insulator transition in one-dimensional lattices with chaotic energy sequences

    Energy Technology Data Exchange (ETDEWEB)

    Pinto, R.A. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela)]. E-mail: ripinto@ivic.ve; Rodriguez, M. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela); Gonzalez, J.A. [Laboratorio de Fisica Computacional, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela); Medina, E. [Laboratorio de Fisica Estadistica, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas, Apartado 21827, Caracas 1020-A (Venezuela)

    2005-06-20

    We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter regulating the dynamic Lyapunov exponent measuring the degree of chaos. We observe the effect of chaotic sequences on the localization length, conductance, conductance distribution and wave function, finding evidence of a metal-insulator transition (MIT) at a critical degree of chaos. The one-dimensional metallic phase is characterized by a Gaussian conductance distribution and exhibits a peculiar non-selfaveraging.

  9. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  10. Metal-Insulator Transition Revisited for Cold Atoms in Non-Abelian Gauge Potentials

    International Nuclear Information System (INIS)

    Satija, Indubala I.; Dakin, Daniel C.; Clark, Charles W.

    2006-01-01

    We discuss the possibility of realizing metal-insulator transitions with ultracold atoms in two-dimensional optical lattices in the presence of artificial gauge potentials. For Abelian gauges, such transitions occur when the magnetic flux penetrating the lattice plaquette is an irrational multiple of the magnetic flux quantum. Here we present the first study of these transitions for non-Abelian U(2) gauge fields. In contrast to the Abelian case, the spectrum and localization transition in the non-Abelian case is strongly influenced by atomic momenta. In addition to determining the localization boundary, the momentum fragments the spectrum. Other key characteristics of the non-Abelian case include the absence of localization for certain states and satellite fringes around the Bragg peaks in the momentum distribution and an interesting possibility that the transition can be tuned by the atomic momenta

  11. Mott transition in the Hubbard model

    International Nuclear Information System (INIS)

    Shastry, B.S.

    1992-01-01

    In this article, the author discuss W. Kohn's criterion for a metal insulator transition, within the framework of a one-band Hubbard model. This and related ideas are applied to 1-dimensional Hubbard systems, and some interesting miscellaneous results discussed. The Jordan-Wigner transformation converting the two species of fermions to two species of hardcore bosons is performed in detail, and the extra phases arising from odd-even effects are explicitly derived. Bosons are shown to prefer zero flux (i.e., diamagnetism) and the corresponding happy fluxes: for the fermions identified. A curios result following from the interplay between orbital diamagnetism and spin polarization is highlighted. A spin-statistics like theorem, showing that the anticommutation relations between fermions of opposite spin are crucial to obtain the SU(2) invariance is pointed out

  12. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  13. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    Energy Technology Data Exchange (ETDEWEB)

    Lysenko, Sergiy, E-mail: sergiy.lysenko@upr.edu; Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph [Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681 (United States); Aparicio, Joaquin [Department of Physics, University of Puerto Rico-Ponce, Ponce, Puerto Rico 00732 (United States); Sepúlveda, Nelson [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  14. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  15. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    Directory of Open Access Journals (Sweden)

    P. A. Bhobe

    2015-10-01

    Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

  16. Substitution effect on metal-insulator transition of K2V8O16

    International Nuclear Information System (INIS)

    Isobe, Masahiko; Koishi, Shigenori; Yamazaki, Satoshi; Yamaura, Jun-ichi; Gotou, Hirotada; Yagi, Takehiko; Ueda, Yutaka

    2009-01-01

    The effect of the substitution of various ions on the metal-insulator (MI) transition at 170 K in K 2 V 8 O 16 has been investigated. Both Rb and Ti form complete solid solution systems: K 2-x Rb x V 8 O 16 and K 2 V 8-y Ti y O 16 , respectively. The substitution of Rb for K or of Ti for V splits the transition into two transitions: the high-temperature transition is a first-order MI transition from a tetragonal structure to a tetragonal structure, and the low-temperature transition is a second-order transition to a monoclinic structure. In K 2-x Rb x V 8 O 16 , the former terminates to an MI transition at around 220 K in Rb 2 V 8 O 16 , while the latter disappears at x > 0.6. In K 2 V 8-y Ti y O 16 , both transitions disappear at y > 0.5. The substitution of Cr for V also results in a similar splitting of the transition and the rapid disappearance of both transitions. The substitution of Na or Ba for K suppresses the MI transition without any splitting of the transition, although the solubility of both ions is limited. These substitution effects reveal that the MI transition of K 2 V 8 O 16 consists of two parts: a first-order MI transition and a parasitic second-order structural transition; the substitution of some ions causes a clear splitting of these transitions, probably due to the difference between the chemical pressure effects on the two transitions. The first-order MI transition is very sensitive to charge randomness, suggesting the charge ordering nature of the MI transition, while the second-order structural transition is very sensitive to both charge and structural randomnesses. (author)

  17. Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    Science.gov (United States)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  18. Charge disproportionation in RNiO3 at the metal-insulator transition

    International Nuclear Information System (INIS)

    Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.; Garcia-Munoz, J.L.; Fernandez-Diaz, M.T.; Aranda, M.A.G.

    1999-01-01

    Complete text of publication follows. Neutron and synchrotron diffraction data provide the first observation of changes in the crystal symmetry at the metal-insulator (MI) transition in RNiO 3 perovskites [1]. At high temperatures, YNiO 3 is orthorhombic and metallic but below T MI = 582 K it changes to a monoclinic insulator. The monoclinic symmetry is due to a partial 2 Ni 3+ → Ni 3+δ + Ni 3-δ charge disproportionation associated to the MI transition. In the insulating state the presence of two NiO 6 octahedra is reported with, respectively, expanded (Ni1) and contracted (Ni2) Ni-O bonds, that alternated along the three directions of the crystal. Corroborating the charge disproportion, unequal moments are found at Ni1 and Ni2 octahedra in the low temperature monoclinic phase. (author) J.A. Alonso et al, Phys. Rev. Lett. in press

  19. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    Science.gov (United States)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  20. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni, E-mail: gz3e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Hildebrand, Helga; Schmuki, Patrik [Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  1. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio; Colizzi, G.; Filippetti, A.; Fiorentini, Vincenzo; Schwingenschlö gl, Udo

    2013-01-01

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  2. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    Science.gov (United States)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-07-01

    We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

  3. Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

    International Nuclear Information System (INIS)

    Lunkenheimer, P.; Mayr, F.; Loidl, A.

    2006-01-01

    We report the frequency-dependent conductivity of the manganite system La 1-x Sr x MnO 3 (x≤0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  4. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio

    2013-06-21

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  5. Metal-insulator transition in disordered systems from the one-body density matrix

    DEFF Research Database (Denmark)

    Olsen, Thomas; Resta, Raffaele; Souza, Ivo

    2017-01-01

    The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied to determine the metal-insulator transition in disordered...... the one-body density matrix. The approach has a general ab initio formulation and could in principle be applied to realistic disordered materials by standard electronic structure methods....... systems. In particular, for noninteracting systems the geometrical marker can be obtained from the configurational average of the norm-squared one-body density matrix, which can be calculated within open as well as periodic boundary conditions. This is in sharp contrast to a classification based...

  6. Critical metal-insulator transition and divergence in a two-particle irreducible vertex in disordered and interacting electron systems

    Czech Academy of Sciences Publication Activity Database

    Janiš, Václav; Pokorný, Vladislav

    2014-01-01

    Roč. 90, č. 4 (2014), "045143-1"-"045143-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : metal-insulator transition * disordered and interacting electron systems * dynamical mean-field theory * critical behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  7. Metal-insulator transition in NiS.sub.2-x./sub.Se.sub.x./sub

    Czech Academy of Sciences Publication Activity Database

    Kuneš, Jan; Baldassarre, L.; Schachner, B.; Rabia, K.; Kuntscher, C.A.; Korotin, D. M.; Anisimov, V.I.; McLeod, J.A.; Kurmaev, E.Z.; Moewes, A.

    2010-01-01

    Roč. 81, č. 3 (2010), 035112/1-035112/6 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : metal-insulator transition * dynamical mean-field theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010 http://prb.aps.org/abstract/PRB/v81/i3/e035122

  8. New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2005-01-01

    We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly...

  9. Effects of Disorder on the Pressure-Induced Mott Transition in κ-(BEDT-TTF2Cu[N(CN2]Cl

    Directory of Open Access Journals (Sweden)

    Elena Gati

    2018-01-01

    Full Text Available We present a study of the influence of disorder on the Mott metal-insulator transition for the organic charge-transfer salt κ -(BEDT-TTF 2 Cu[N(CN 2 ]Cl. To this end, disorder was introduced into the system in a controlled way by exposing the single crystals to X-ray irradiation. The crystals were then fine-tuned across the Mott transition by the application of continuously controllable He-gas pressure at low temperatures. Measurements of the thermal expansion and resistance show that the first-order character of the Mott transition prevails for low irradiation doses achieved by irradiation times up to 100 h. For these crystals with a moderate degree of disorder, we find a first-order transition line which ends in a second-order critical endpoint, akin to the pristine crystals. Compared to the latter, however, we observe a significant reduction of both, the critical pressure p c and the critical temperature T c . This result is consistent with the theoretically-predicted formation of a soft Coulomb gap in the presence of strong correlations and small disorder. Furthermore, we demonstrate, similar to the observation for the pristine sample, that the Mott transition after 50 h of irradiation is accompanied by sizable lattice effects, the critical behavior of which can be well described by mean-field theory. Our results demonstrate that the character of the Mott transition remains essentially unchanged at a low disorder level. However, after an irradiation time of 150 h, no clear signatures of a discontinuous metal-insulator transition could be revealed anymore. These results suggest that, above a certain disorder level, the metal-insulator transition becomes a smeared first-order transition with some residual hysteresis.

  10. Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures

    Directory of Open Access Journals (Sweden)

    Woong-Ki Hong

    2015-01-01

    Full Text Available The metal-insulator transition (MIT in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2 has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D VO2 structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2 structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2 structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.

  11. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

    Science.gov (United States)

    Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

    1996-02-01

    Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

  12. Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

    Science.gov (United States)

    Lou, Paul C.; Kumar, Sandeep

    2018-04-01

    The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

  13. Metal-insulator transition in 2D: the role of interactions and disorder

    International Nuclear Information System (INIS)

    Kastrinakis, George

    2007-01-01

    We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin scattering (coming from the interfaces of the heterostructures in question). In a diagramatic approach, we predict the existence of a characteristic temperature T 0 =T 0 (n,ω H ), n being the density of carriers, and ω H the Zeeman energy, below which these systems become metallic, due to the onset of strong spin-density correlations. This is in very good agreement with experiments, and corroborates the fact that varying n and ω H are equivalent ways into/out of the metallic regime. The conductivity, calculated as a function of temperature and ω H in the metallic state, compares favorably to experiment. Moreover, we give an explicit expression for the conventional weak disorder contributions to the conductivity in the frame of our model. We comment on the nature of the transition, we calculate the specific heat of the system and we discuss the fate of the metallic state in the limit of zero temperature

  14. Metal-insulator transition induced in CaVO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  15. Metal-insulator transition induced in CaVO3 thin films

    International Nuclear Information System (INIS)

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-01-01

    Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

  16. Direct detection of metal-insulator phase transitions using the modified Backus-Gilbert method

    Directory of Open Access Journals (Sweden)

    Ulybyshev Maksim

    2018-01-01

    Full Text Available The detection of the (semimetal-insulator phase transition can be extremely difficult if the local order parameter which characterizes the ordered phase is unknown. In some cases, it is even impossible to define a local order parameter: the most prominent example of such system is the spin liquid state. This state was proposed to exist in the Hubbard model on the hexagonal lattice in a region between the semimetal phase and the antiferromagnetic insulator phase. The existence of this phase has been the subject of a long debate. In order to detect these exotic phases we must use alternative methods to those used for more familiar examples of spontaneous symmetry breaking. We have modified the Backus-Gilbert method of analytic continuation which was previously used in the calculation of the pion quasiparticle mass in lattice QCD. The modification of the method consists of the introduction of the Tikhonov regularization scheme which was used to treat the ill-conditioned kernel. This modified Backus-Gilbert method is applied to the Euclidean propagators in momentum space calculated using the hybrid Monte Carlo algorithm. In this way, it is possible to reconstruct the full dispersion relation and to estimate the mass gap, which is a direct signal of the transition to the insulating state. We demonstrate the utility of this method in our calculations for the Hubbard model on the hexagonal lattice. We also apply the method to the metal-insulator phase transition in the Hubbard-Coulomb model on the square lattice.

  17. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory

    International Nuclear Information System (INIS)

    Balzer, Matthias

    2008-01-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  18. Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

    Directory of Open Access Journals (Sweden)

    Swagata Acharya

    2018-05-01

    Full Text Available High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La_{2}CuO_{4} (LCO with Sr (LSCO, or electron doped, such as Nd_{2}CuO_{4} (NCO with Ce (NCCO. In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW and dynamical mean-field theory (DMFT, we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d-wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between T_{c} and the charge transfer gap, while also providing a guide towards the design of optimized high-T_{c} superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-T_{c} superconductivity.

  19. Resolving the chicken-and-egg problem in VO2: a new paradigm for the Mott transition

    Science.gov (United States)

    Najera, Oscar; Civelli, Marcello; Dobrosavljevi, Vladimir; Rozenberg, Marcelo

    We consider a minimal model to investigate the metal-insulator transition in VO2. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO2 is entirely compatible with a Mott electronic mechanism, solving a long standing ''chicken-and-egg'' debate and calling for further research of ``Mottronics'' applications of this system. This work was partially supported by public Grants from the French National Research Agency (ANR), project LACUNES No ANR-13-BS04-0006-01, the NSF DMR-1005751 and DMR-1410132.

  20. Metal-Insulator Phase Transition in thin VO2 films: A Look from the Far Infrared Side

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, B. M.; Thoman, A.

    Vanadium dioxide (VO2) displays a well-known metal-insulator (MI) transition at atemperature of 68oC. The MI transition in VO2 has been studied extensively by a widerange of optical, electrical, structural, and magnetic measurements. In spite of this there isstill some controversy about the nature...... temperature hysteresis of the far-infrared transmission through thethin film with temperature. Interestingly the temperature-dependent transmissionamplitude shows a markedly different switching temperature than the transmission phase.This effect has not been observed before, and is very important...

  1. Superlattice formation lifting degeneracy protected by nonsymmorphic symmetry through a metal-insulator transition in RuAs

    Science.gov (United States)

    Kotegawa, Hisashi; Takeda, Keiki; Kuwata, Yoshiki; Hayashi, Junichi; Tou, Hideki; Sugawara, Hitoshi; Sakurai, Takahiro; Ohta, Hitoshi; Harima, Hisatomo

    2018-05-01

    A single crystal of RuAs obtained with the Bi-flux method shows obvious successive metal-insulator transitions at TMI 1˜255 K and TMI 2˜195 K. The x-ray diffraction measurement reveals the formation of a superlattice of 3 ×3 ×3 of the original unit cell below TMI 2, accompanied by a change of the crystal system from the orthorhombic structure to the monoclinic one. Simple dimerization of the Ru ions is not seen in the ground state. The multiple As sites observed in the nuclear quadrupole resonance spectrum also demonstrate the formation of the superlattice in the ground state, which is clarified to be nonmagnetic. The divergence in 1 /T1 at TMI 1 shows that a symmetry lowering by the metal-insulator transition is accompanied by strong critical fluctuations of some degrees of freedom. Using the structural parameters in the insulating state, the first-principles calculation reproduces successfully the reasonable size of nuclear quadrupole frequencies νQ for the multiple As sites, ensuring the high validity of the structural parameters. The calculation also gives a remarkable suppression in the density of states near the Fermi level, although the gap opening is insufficient. A coupled modulation of the calculated Ru d -electron numbers and the crystal structure proposes the formation of a charge density wave in RuAs. Some lacking factors remain, but it is shown that a lifting of degeneracy protected by the nonsymmorphic symmetry through the superlattice formation is a key ingredient for the metal-insulator transition in RuAs.

  2. Mottness

    International Nuclear Information System (INIS)

    Phillips, Philip

    2006-01-01

    We review several of the normal state properties of the cuprates in an attempt to establish an organizing principle from which pseudogap phenomena, broad spectral features, T-linear resistivity, and spectral weight transfer emerge. We first show that standard field theories with a single critical length scale cannot capture the T-linear resistivity as long as the charge carriers are critical. What seems to be missing is an additional length scale, which may or may not be critical. Second, we prove a generalised version of Luttinger's theorem for a Mott insulator. In particular, we show that for Mott insulators, regardless of the spatial dimension, the Fermi surface of the non-interacting system is converted into a surface of zeros of the single-particle Green function when the underlying band structure has particle-hole symmetry. Only in the presence of particle-hole symmetry does the volume of the surface of zeros equal the particle density. The surface of zeros persists at finite doping and is shown to provide a framework from which pseudogaps, broad spectral features, spectral weight transfer on the Mott gap scale, and the additional length scale required to capture T-linear resistivity can be understood

  3. Influence of the disorder in doped germanium changed by compensation on the critical indices of the metal-insulator transition

    International Nuclear Information System (INIS)

    Rentzsch, R.; Reich, Ch.; Ionov, A.N.; Ginodman, V.; Slimak, I.; Fozooni, P.; Lea, M.J.

    1999-01-01

    We present a critical review of the present status of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with the emphasis on the role of meso- and macroscopy inhomogeneity caused by the disorder of acceptors and donors in the crystals. By using the isotopic and engineering and the neutron transmutation doping of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν = 1/2 and ξ = 1, which double for medium compensations (at K = 39 and 54%) to ν 1 and ξ = 2, respectively

  4. Electric controlling of surface metal-insulator transition in the doped BaTiO3 film

    Directory of Open Access Journals (Sweden)

    Wei Xun

    2017-07-01

    Full Text Available Based on first-principles calculations, the BaTiO3(BTO film with local La-doping is studied. For a selected concentration and position of doping, the surface metal-insulator transition occurs under the applied electric field, and the domain appears near the surface for both bipolar states. Furthermore, for the insulated surface state, i.e., the downward polarization state in the doped film, the gradient bandgap structure is achieved, which favors the absorption of solar energy. Our investigation can provide an alternative avenue in modification of surface property and surface screening effect in polar materials.

  5. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    Science.gov (United States)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  6. Reliability of the one-crossing approximation in describing the Mott transition

    Science.gov (United States)

    Vildosola, V.; Pourovskii, L. V.; Manuel, L. O.; Roura-Bas, P.

    2015-12-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal-insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed.

  7. Ca-site substitution induced a metal-insulator transition in manganite CaMnO3

    International Nuclear Information System (INIS)

    Sousa, D.; Nunes, M.R.; Silveira, C.; Matos, I.; Lopes, A.B.; Melo Jorge, M.E.

    2008-01-01

    A systematic study of the A-site doping in Mn(IV)-rich perovskite manganites Ca 1-x Ho x MnO 3 , over a large homogeneity range (0.1 ≤ x ≤ 0.4), has been performed. A significant increase in the lattice parameters indicated the presence of mixed valence state of Mn: Mn 3+ and Mn 4+ . The substitution of calcium by holmium also induces strong changes in the electrical properties. We found that small Ho concentration produces an important decrease in the electrical resistivity and induces an electrical transition, the temperature corresponding to the metal-insulator transition (T MI ) shifts with the holmium content. This electrical behavior is attributed to the Mn 3+ ions content and a charge order effect

  8. The metal-insulator transition of RNiO3 perovskites. What can we learn from neutron diffraction?

    International Nuclear Information System (INIS)

    Medarde, M.L.

    1996-01-01

    RNiO 3 perovskites (R = rare earth) provide a remarkable opportunity to study the relationship between structural and physical properties since by moving along the 4f rare earth series, the evolution of several transport and magnetic properties can be nicely correlated to the steric effects associated with the lanthanide contraction. The most appealing example is probably the metal-insulator transition discovered for the compounds with R≠La, whose critical temperature T M-I increases with decreasing size of the rare earth ion. In this lecture, a summary of the most relevant neutron diffraction results on this system is presented. Moreover, the nickelates are used as an example to illustrate the performance of the diffractometers HRPT and DMCG to be installed at the SINQ. (author) 12 figs., 2 tabs., 17 refs

  9. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  10. The metal-insulator transition of RNiO{sub 3} perovskites. What can we learn from neutron diffraction?

    Energy Technology Data Exchange (ETDEWEB)

    Medarde, M L [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1996-11-01

    RNiO{sub 3} perovskites (R = rare earth) provide a remarkable opportunity to study the relationship between structural and physical properties since by moving along the 4f rare earth series, the evolution of several transport and magnetic properties can be nicely correlated to the steric effects associated with the lanthanide contraction. The most appealing example is probably the metal-insulator transition discovered for the compounds with R{ne}La, whose critical temperature T{sub M-I} increases with decreasing size of the rare earth ion. In this lecture, a summary of the most relevant neutron diffraction results on this system is presented. Moreover, the nickelates are used as an example to illustrate the performance of the diffractometers HRPT and DMCG to be installed at the SINQ. (author) 12 figs., 2 tabs., 17 refs.

  11. Magnetic Excitations across the Metal-Insulator Transition in the Pyrochlore Iridate Eu2Ir2O7

    Science.gov (United States)

    Chun, Sae Hwan; Yuan, Bo; Casa, Diego; Kim, Jungho; Kim, Chang-Yong; Tian, Zhaoming; Qiu, Yang; Nakatsuji, Satoru; Kim, Young-June

    2018-04-01

    We report a resonant inelastic x-ray scattering study of the magnetic excitation spectrum in a highly insulating Eu2 Ir2 O7 single crystal that exhibits a metal-insulator transition at TMI=111 (7 ) K . A propagating magnon mode with a 20 meV bandwidth and a 28 meV magnon gap is found in the excitation spectrum at 7 K, which is expected in the all-in-all-out magnetically ordered state. This magnetic excitation exhibits substantial softening as the temperature is raised towards TMI and turns into a highly damped excitation in the paramagnetic phase. Remarkably, the softening occurs throughout the whole Brillouin zone including the zone boundary. This observation is inconsistent with the magnon renormalization expected in a local moment system and indicates that the strength of the electron correlation in Eu2 Ir2 O7 is only moderate, so that electron itinerancy should be taken into account in describing its magnetism.

  12. Optical Response of Cu1-xZnxIr2S4 Due to Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Chen, L.; Matsunami, M.; Nanba, T.; Cao, G.; Suzuki, H.; Isobe, M.; Matsumoto, T.

    2003-01-01

    The mother material CuIr 2 S 4 of the thiospinel system Cu 1-x Zn x Ir 2 S 4 undergoes a temperature-induced metal--insulator (Mi) transition. We report the temperature dependence of the optical reflection spectra of Cu 1-x Zn x Ir 2 S 4 (x ≤ 0.5) at the temperatures of 8-300 K in the energy regions of 0.005--30 eV in order to study the change in the electronic structure due to the Zn substitution for Cu. Zn substitution induced mainly the splitting of the hybridization band between the Ir-5d(t 2g ) and S-3 p states crossing the E F . Obtained optical conductivity (σ ) spectrum is discussed in relation to the change in the electronic structure close to the E F . (author)

  13. Mott mechanism and the hadronic to quark matter phase transition

    International Nuclear Information System (INIS)

    Blaschke, D.; Reinholz, F.

    1984-01-01

    A unified description of both the hadronic and quark matter can be found using the technique of thermodynamic Green functions. The destruction of bound states (quark deconfinement) is related microscopically to the Mott mechanism which leads to a different behaviour of free particle energies and bound state energies if the particle density is increasing. A simple model calculation is performed to obtain a rough estimate for the critical temperature of the hadronic-quark matter phase transition

  14. Metal-insulator transition in Si(111)-(4 x 1)/(8 x 2)-In studied by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speiser, E.; Hinrichs, K.; Cobet, C.; Esser, N. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Chandola, S. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); School of Physics, Trinity College Dublin 2 (Ireland); Gensch, M. [Helmholtz Zentrum Berlin (Germany); Wippermann, S.; Schmidt, W.G. [Theoretische Physik, Universitaet Paderborn (Germany); Bechstedt, F. [Institut fuer Festkoerpertheorie und -Optik, Friedrich-Schiller-Universitaet, Jena (Germany); Richter, W. [Dipartimento di Fisica, Universita di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fleischer, K.; McGilp, J.F. [School of Physics, Trinity College Dublin 2 (Ireland)

    2010-08-15

    Measurements of the surface vibrational modes and optical response of Si(111)-(4 x 1)/(8 x 2)-In are compiled and a comparison to ab initio calculations performed within DFT-LDA formalism is given. Surface resonant Raman spectroscopy allows identifying a number of surface phonons with high spectral precision. The phase transition of the (4 x 1)-(8 x 2) surface structure is found to be accompanied by characteristic changes of the surface phonons, which are discussed with respect to various structural models suggested. The optical anisotropy of the (8 x 2) phase shows that the anisotropic Drude tail of the (4 x 1) phase is replaced by two peaks at 0.50 and 0.72 eV. The spectroscopic signatures of the (4 x 1) and (8 x 2) phases agree with a metal-insulator transition. The mid-IR-anisotropic optical response of the insulating (8 x 2) phase is interpreted in terms of electronic single particle excitations between surface electronic bands related to the In-nanowire surface. Comparison of the measured optical transitions with DFT ab initio calculations for the hexagon model and the trimer model of the (8 x 2) structure shows evidence for the existence of the hexagon structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Core-level photoemission revealing the Mott transition

    International Nuclear Information System (INIS)

    Kim, Hyeong-Do; Noh, Han-Jin; Kim, K.H.; Oh, S.-J.

    2005-01-01

    Ru 3d core-level X-ray photoemission spectra of various ruthenates are examined. They show in general two-peak structures, which can be assigned as the screened and unscreened peaks. The screened peak is absent in a Mott insulator, but develops into a main peak as the correlation strength becomes weak. This spectral behavior is well explained by the dynamical mean-field theory calculation for the single-band Hubbard model with the on-site core-hole potential using the exact diagonalization method. The new mechanism of the core-level photoemission satellite can be utilized to reveal the Mott transition phenomenon in various strongly correlated electron systems

  16. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  17. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

    2006-01-01

    We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

  18. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  19. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  20. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory; Fuellungs- und wechselwirkungsabhaengiger Mott-Uebergang. Quanten-Cluster-Rechnungen im Rahmen der Selbstenergiefunktional-Theorie

    Energy Technology Data Exchange (ETDEWEB)

    Balzer, Matthias

    2008-07-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  1. Topotactic Metal-Insulator Transition in Epitaxial SrFeO x Thin Films

    International Nuclear Information System (INIS)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong

    2017-01-01

    Multivalent transition metal oxides provide fascinating and rich physics related to oxygen stoichiometry. In particular, the adoptability of various valence states of transition metals enables perovskite oxides to display mixed (oxygen) ionic and electronic conduction and catalytic activity useful in many practical applications, including solid-oxide fuel cells (SOFCs), rechargeable batteries, gas sensors, and memristive devices. For proper realization of the ionic conduction and catalytic activity, it is essential to understand the reversible oxidation and reduction process, which is governed by oxygen storage/release steps in oxides. Topotactic phase transformation facilitates the redox process in perovskites with specific oxygen vacancy ordering by largely varying the oxygen concentration of a material without losing the lattice framework. The concentration and diffusion of oxide ions (O 2– ), the valence state of the transition metal cations, and the thermodynamic structural integrity together provide fundamental understanding and ways to explicitly control the redox reaction.[6] In addition, it offers an attractive route for tuning the emergent physical properties of transition metal oxides, via strong coupling between the crystal lattice and electronic structure.

  2. Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

    Science.gov (United States)

    McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

    2018-03-01

    Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of (010)VO2|| (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

  3. Absence of Mass Renormalization upon the Metal-Insulator Transition in La_1-xSr_xMnO_3

    Science.gov (United States)

    Okuda, T.; Asamitsu, A.; Tokura, Y.

    1998-03-01

    The low-temperature specific heat as well as the resistivity of La_1-xSr_xMnO3 crystals has been measured under magnetic fields to investigate the critical behavior of the metal-insulator (MI) transition, which is induced by carrier doping around a critical composition of x_c=0.17. We observed the reduction of specific heat by application of magnetic fields, which is due to the suppression of the contribution of spin wave. Thus, the magnetic contribution to the specific heat was carefully removed to extract the electronic contribution. The effective mass, derived from obtained electronic specific heat coefficient γ, is a few times as large as a bare mass in the ferromagnetic metallic state, e.g. γ = 3.5 (mJ/K^2 mole) at x=0.3, and does not critically increase around the critical point while showing the maximum value γ = 5.1 (mJ/K^2 mole) at x=0.18. This is in contrast with the conspicuous mass renormalization effect as observed for other transition metal oxide, eg. V_2O3 and LaTiO_3. The γ value rather decreases with the decrease of x from 0.18 to 0.15, namely in the immediate vicinity of the MI boundary. This suggests that the Fermi surface gradually shrinks towards the insulating phase and finally disappears at the MI phase boundary. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) of Japan.

  4. Mechanisms of spin-flipping and metal-insulator transition in nano-Fe3O4

    Science.gov (United States)

    Dito Fauzi, Angga; Aziz Majidi, Muhammad; Rusydi, Andrivo

    2017-04-01

    Fe3O4 is a half-metallic ferrimagnet with {{T}\\text{C}}˜ 860 K exhibiting metal-insulator transition (MIT) at  ˜120 K. In bulk form, the saturation magnetization is 0.6 Tesla (˜471 emu cm-3). A recent experimental study has shown that the saturation magnetization of nano-Fe3O4 thin films can achieve up to  ˜760 emu cm-3, attributed to spin-flipping of Fe ions at tetrahedral sites assisted by oxygen vacancies (V O). Such a system has shown to have higher MIT temperature (˜150 K). The spin-flipping is a new phenomenon in Fe3O4, while the MIT is a long-standing one. Here, we propose a model and calculations to investigate the mechanisms of both phenomena. Our results show that, for the system without V O, the ferrimagnetic configuration is energetically favorable. Remakably, upon inclusion of V O, the ground-state configuration switches into ferromagnetic. As for the MIT, by proposing temperature dependences of some hopping integrals in the model, we demonstrate that the system without and with V O undergo the MIT in slightly different ways, leading to higher MIT temperature for the system with V O, in agreement with the experimental data. Our results also show that the MIT in both systems occur concomitantly with the redistribution of electrons among the three Fe ions in each Fe3O4 formula unit. As such temperature dependences of hopping integrals may arise due to dynamic Jahn-Teller effects, our phenomenological theory may provide a way to reconcile existing theories relating the MIT to the structural transition and the charge ordering.

  5. Conductance fluctuations and distribution at metal-insulator transition induced by electric field in disordered chain

    International Nuclear Information System (INIS)

    Senouci, Khaled

    2000-08-01

    A simple Kronig-Penney model for 1D mesoscopic systems with δ peak potentials is used to study numerically the influence of a constant electric field on the conductance fluctuations and distribution at the transition. We found that the conductance probability distribution has a system-size independent form with large fluctuations in good agreement with the previous works in 2D and 3D systems. (author)

  6. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    Science.gov (United States)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  8. Ground state oxygen holes and the metal-insulator transition in rare earth nickelates

    Energy Technology Data Exchange (ETDEWEB)

    Schmitt, Thorsten; Bisogni, Valentina; Huang, Yaobo; Strocov, Vladimir [Research Department Synchrotron Radiation and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Catalano, Sara; Gibert, Marta; Scherwitzl, Raoul; Zubko, Pavlo; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva (Switzerland); Green, Robert J.; Balandeh, Shadi; Sawatzky, George [Department of Physics and Astronomy, University of British Columbia, Vancouver (Canada)

    2015-07-01

    Perovskite rare-earth (Re) nickelates ReNiO{sub 3} continue to attract a lot of interest owing to their intriguing properties like a sharp metal to insulator transition (MIT), unusual magnetic order and expected superconductivity in specifically tuned super-lattices. Full understanding of these materials, however, is hampered by the difficulties in describing their electronic ground state (GS). From X-ray absorption (XAS) at the Ni 2p{sub 3/2} edge of thin films of NdNiO{sub 3} and corresponding RIXS maps vs. incident and transferred photon energies we reveal that the electronic GS configuration of NdNiO{sub 3} is composed of delocalized and localized components. Our study conveys that a Ni 3d{sup 8}-like configuration with holes at oxygen takes on the leading role in the GS and the MIT of ReNiO{sub 3} as proposed by recent model theories.

  9. Metal-insulator transition and magnetic properties of La - (Ba/Ca) - Mn - O compounds

    International Nuclear Information System (INIS)

    Anbarasu, V.; Manigandan, A.; Sathiyakumar, S.; Jayabalan, K.; Kaliyaperumal, L.K.

    2009-01-01

    The manganite compounds La 2 BaMn (3+x) P y (where x = 0, 0.5 and 1) and La 2 CaMn 3 O y have been prepared for the importance in the field of magneto resistance materials through solid-state reaction technique. From the Powder XRD patterns it was confirmed that both compounds were in single phase and the refined crystal system matches with superconducting perovskite structure and the lattice parameters were calculated as a = 3.892( 6) A, b = 3.899(3) A and c = 11.619(8) A for La 2 BaMn 3 O y ; a = 3.851(3) A, b = 3.891(9) A and c = 11.542(7) A for La 2 CaMn 3 O y . The low temperature resistivity measurement reveals that the compound La 2 BaMn 3 O y exhibiting M - I transition and the transition temperature was found to be 270 K. The study on magnetization nature of the La 2 BaMn 3+x Oy (where x = 0, 0.5 and I) compounds through vibrating sample magnetometer confirms the superparamagnetic nature at room temperature condition where as La 2 CaMn 3 O y exhibits paramagnetic nature. The structural relations between the prepared manganite systems La 2 BaMn 3 O y and La 2 CaMn 3 O y with superconducting perovskite compound LaBa 2 Cu 3 O 7-y was studied with the technological application of magneto resistive property of the prepared compounds. (author)

  10. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    Science.gov (United States)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  11. The Mott transition in the strong coupling perturbation theory

    International Nuclear Information System (INIS)

    Sherman, A.

    2015-01-01

    Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth Δ to the Hubbard repulsion U are taken into account in the irreducible part of the Larkin equation. The obtained equation is shown to retain causality and reduces to Green's function of uncorrelated electrons in the limit U→0. Calculations were performed for the semi-elliptical initial band. It is shown that the approximation describes the Mott transition, which occurs at U c =√(3)Δ/2. This value coincides with that obtained in the Hubbard-III approximation. At half-filling, for 0U c the Mott gap disappears

  12. The Mott transition in the strong coupling perturbation theory

    Science.gov (United States)

    Sherman, A.

    2015-01-01

    Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth Δ to the Hubbard repulsion U are taken into account in the irreducible part of the Larkin equation. The obtained equation is shown to retain causality and reduces to Green's function of uncorrelated electrons in the limit U → 0. Calculations were performed for the semi-elliptical initial band. It is shown that the approximation describes the Mott transition, which occurs at Uc =√{ 3 } Δ / 2. This value coincides with that obtained in the Hubbard-III approximation. At half-filling, for 0 self-energy is nonzero at the Fermi level, which indicates that the obtained solution is not a Fermi liquid. At small deviations from half-filling the density of states shifts along the frequency axis without perceptible changes in its shape. For larger deviations the density of states is modified: it is redistributed in favor of the subband, in which the Fermi level is located, and for U >Uc the Mott gap disappears.

  13. Spectral properties near the Mott transition in the two-dimensional Hubbard model

    Science.gov (United States)

    Kohno, Masanori

    2013-03-01

    Single-particle excitations near the Mott transition in the two-dimensional (2D) Hubbard model are investigated by using cluster perturbation theory. The Mott transition is characterized by the loss of the spectral weight from the dispersing mode that leads continuously to the spin-wave excitation of the Mott insulator. The origins of the dominant modes of the 2D Hubbard model near the Mott transition can be traced back to those of the one-dimensional Hubbard model. Various anomalous spectral features observed in cuprate high-temperature superconductors, such as the pseudogap, Fermi arc, flat band, doping-induced states, hole pockets, and spinon-like and holon-like branches, as well as giant kink and waterfall in the dispersion relation, are explained in a unified manner as properties near the Mott transition in a 2D system.

  14. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  15. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    Science.gov (United States)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  16. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    Science.gov (United States)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-08-04

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  17. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (011)-oriented vanadium dioxide films grown by magnetron sputtering

    International Nuclear Information System (INIS)

    Yu Qian; Li Wenwu; Duan Zhihua; Hu Zhigao; Chu Junhao; Liang Jiran; Chen Hongda; Liu Jian

    2013-01-01

    The metal-insulator transition behaviour of vanadium dioxide (VO 2 ) films grown at different oxygen pressures is investigated. With the aid of temperature-dependent electrical and infrared transmittance experiments, it is found that the transition temperature in the heating process goes up with increasing argon-oxygen ratio, whereas the one in the cooling process shows an inverse variation trend. It is found that the hysteresis width of the phase transition is narrowed at a lower argon-oxygen ratio because the defects introduced by excess oxygen lower the energy requirement of transformation. Furthermore, the defects reduce the forbidden gap of the VO 2 system due to the generation of a V 5+ ion. The present results are valuable for the achievement of VO 2 -based optoelectronic devices.

  18. The Mott localization and magnetic properties in condensed fermions systems

    International Nuclear Information System (INIS)

    Wojcik, W.

    1995-01-01

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs

  19. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wangoh, L.; Quackenbush, N. F. [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Marley, P. M.; Banerjee, S. [Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260 (United States); Sallis, S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  20. Effective field theory and integrability in two-dimensional Mott transition

    International Nuclear Information System (INIS)

    Bottesi, Federico L.; Zemba, Guillermo R.

    2011-01-01

    Highlights: → Mott transition in 2d lattice fermion model. → 3D integrability out of 2D. → Effective field theory for Mott transition in 2d. → Double Chern-Simons. → d-Density waves. - Abstract: We study the Mott transition in a two-dimensional lattice spinless fermion model with nearest neighbors density-density interactions. By means of a two-dimensional Jordan-Wigner transformation, the model is mapped onto the lattice XXZ spin model, which is shown to possess a quantum group symmetry as a consequence of a recently found solution of the Zamolodchikov tetrahedron equation. A projection (from three to two space-time dimensions) property of the solution is used to identify the symmetry of the model at the Mott critical point as U q (sl(2)-circumflex)xU q (sl(2)-circumflex), with deformation parameter q = -1. Based on this result, the low-energy effective field theory for the model is obtained and shown to be a lattice double Chern-Simons theory with coupling constant k = 1 (with the standard normalization). By further employing the effective filed theory methods, we show that the Mott transition that arises is of topological nature, with vortices in an antiferromagnetic array and matter currents characterized by a d-density wave order parameter. We also analyze the behavior of the system upon weak coupling, and conclude that it undergoes a quantum gas-liquid transition which belongs to the Ising universality class.

  1. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  2. On effective holographic Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2016-12-20

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  3. On effective holographic Mott insulators

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2016-01-01

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  4. Hartree-Fock study of the Anderson metal-insulator transition in the presence of Coulomb interaction: Two types of mobility edges and their multifractal scaling exponents

    Science.gov (United States)

    Lee, Hyun-Jung; Kim, Ki-Seok

    2018-04-01

    We investigate the role of Coulomb interaction in the multifractality of Anderson metal-insulator transition, where the Coulomb interaction is treated within the Hartree-Fock approximation, but disorder effects are taken into account exactly. An innovative technical aspect in our simulation is to utilize the Ewald-sum technique, which allows us to introduce the long-range nature of the Coulomb interaction into Hartree-Fock self-consistent equations of order parameters more accurately. This numerical simulation reproduces the Altshuler-Aronov correction in a metallic state and the Efros-Shklovskii pseudogap in an insulating phase, where the density of states ρ (ω ) is evaluated in three dimensions. Approaching the quantum critical point of a metal-insulator transition from either the metallic or insulting phase, we find that the density of states is given by ρ (ω ) ˜|ω| 1 /2 , which determines one critical exponent of the McMillan-Shklovskii scaling theory. Our main result is to evaluate the eigenfunction multifractal scaling exponent αq, given by the Legendre transformation of the fractal dimension τq, which characterizes the scaling behavior of the inverse participation ratio with respect to the system size L . Our multifractal analysis leads us to identify two kinds of mobility edges, one of which occurs near the Fermi energy and the other of which appears at a high energy, where the density of states at the Fermi energy shows the Coulomb-gap feature. We observe that the multifractal exponent at the high-energy mobility edge remains to be almost identical to that of the Anderson localization transition in the absence of Coulomb interactions. On the other hand, we find that the multifractal exponent near the Fermi energy is more enhanced than that at the high-energy mobility edge, suspected to result from interaction effects. However, both the multifractal exponents do not change even if the strength of the Coulomb interaction varies. We also show that the

  5. Reflectance study on the metal-insulator transition driven by crystallinity change in poly(3,4-ethylenedioxy thiophene)/poly(styrenesulfonate) films

    International Nuclear Information System (INIS)

    Cho, Shinuk; Park, Sungheum; Lee, Kwanghee

    2005-01-01

    We report optical reflectance, R(ω), studies on free-standing films of poly(3,4-ethylene dioxy thiophene)/poly(style ne sulfonate) (PEDOT-PSS) measured over a range from 0.02 - 5.0 eV. When the PEDOT-PSS films were prepared at an elevated temperature of 60 .deg. C, the films exhibit an increased dc-conductivity (σ dc ∼ 104 S/cm) and an optical conductivity, σ(ω), in the intraband transitions below 1.0 eV as compared with the films prepared at room temperature (σ dc ∼ 47 S/cm). Detailed analysis of σ(ω) in terms of the 'localization-modified Drude (LMD) model' demonstrated that the heat-treated PEDOT-PSS was a disordered metal near the metal-insulator transition (MIT) while the as-grown films could be better described as a Fermi glass on the insulating side of MIT. The heat-annealing process increased the degree of crystallinity of the films, thereby inducing a MIT near the critical limit.

  6. Role of temperature-dependent O-p-Fe-d hybridization parameter in the metal-insulator transition of Fe3O4: a theoretical study

    Science.gov (United States)

    Fauzi, A. D.; Majidi, M. A.; Rusydi, A.

    2017-04-01

    We propose a simple tight-binding based model for Fe3O4 that captures the preference of ferrimagnetic over ferromagnetic spin configuration of the system. Our model is consistent with previous theoretical and experimental studies suggesting that the system is half metallic, in which spin polarized electrons hop only among the Fe B sites. To address the metal-insulator transition (MIT) we propose that the strong correlation among electrons, which may also be influenced by the electron-phonon interactions, manifest as the temperature-dependence of the O-p-Fe-d hybridization parameter, particularly Fe-d belonging to one of the Fe B sites (denoted as {t}{{FeB}-{{O}}}(2)). By proposing that this parameter increases as the temperature decreases, our density-of-states calculation successfully captures a gap opening at the Fermi level, transforming the system from half metal to insulator. Within this model along with the corresponding choice of parameters and a certain profile of the temperature dependence of {t}{{FeB}-{{O}}}(2), we calculate the resistivity of the system as a function of temperature. Our calculation result reveals the drastic uprising trend of the resistivity profile as the temperature decreases, with the MIT transition temperature located around 100 K, which is in agreement with experimental data.

  7. Probing charge transfer during metal-insulator transitions in graphene-LaAlO3/SrTiO3 systems

    Science.gov (United States)

    Aliaj, I.; Sambri, A.; Miseikis, V.; Stornaiuolo, D.; di Gennaro, E.; Coletti, C.; Pellegrini, V.; Miletto Granozio, F.; Roddaro, S.

    2018-06-01

    Two-dimensional electron systems (2DESs) at the interface between LaAlO3 (LAO) and SrTiO3 (STO) perovskite oxides display a wide class of tunable phenomena ranging from superconductivity to metal-insulator transitions. Most of these effects are strongly sensitive to surface physics and often involve charge transfer mechanisms, which are, however, hard to detect. In this work, we realize hybrid field-effect devices where graphene is used to modulate the transport properties of the LAO/STO 2DES. Different from a conventional gate, graphene is semimetallic and allows us to probe charge transfer with the oxide structure underneath the field-effect electrode. In LAO/STO samples with a low initial carrier density, graphene-covered regions turn insulating when the temperature is lowered to 3 K, but conduction can be restored in the oxide structure by increasing the temperature or by field effect. The evolution of graphene's electron density is found to be inconsistent with a depletion of LAO/STO, but it rather points to a localization of interfacial carriers in the oxide structure.

  8. Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Science.gov (United States)

    Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

    2018-03-01

    Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

  9. Enhanced ferromagnetism, metal-insulator transition, and large magnetoresistance in La1-xCaxMn1-xRuxO3 free of eg-orbital double-exchange

    Science.gov (United States)

    Liu, M. F.; Du, Z. Z.; Liu, H. M.; Li, X.; Yan, Z. B.; Dong, S.; Liu, J.-M.

    2014-03-01

    The structure, ionic valences, magnetism, and magneto-transport behaviors of mixed valence oxides La1-xCaxMn1-xRuxO3 are systematically investigated. The simultaneous substitutions of La3+ and Mn3+ ions by Ca2+ and Ru4+, respectively, are confirmed by the structural and ionic valence characterizations, excluding the presence of Mn4+ and Ru3+ ions. The enhanced ferromagnetism, induced metal-insulator transition, and remarkable magnetoresistance effect are demonstrated when the substitution level x is lower than ˜0.6, in spite of the absence of the Mn3+-Ru4+ eg-orbital double-exchange. These anomalous magnetotransport effects are discussed based on the competing multifold interactions associated with the Mn3+-Ru4+ super-exchange and strong Ru4+-Ru4+ hopping, while the origins for the metal-insulator transition and magnetoresistance effect remain to be clarified.

  10. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio

    2017-08-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  11. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    International Nuclear Information System (INIS)

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-01

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase

  12. First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

    Science.gov (United States)

    Marcelino, Edgar

    2017-05-01

    This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using the Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order; in this case the spontaneous symmetry-breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

  13. The one-particle scenario for the metal-insulator transition in two-dimensional systems at T = 0

    CERN Document Server

    Tarasov, Y V

    2003-01-01

    The conductance of bounded disordered electron systems is calculated by reducing the original dynamic problem of arbitrary dimensionality to a set of strictly one-dimensional problems for one-particle mode propagators. The metallic ground state of a two-dimensional conductor, which is considered as a limiting case of three-dimensional quantum waveguide, is shown to result from its multi-modeness. As the waveguide thickness is reduced, e.g., by applying a 'pressing' potential, the electron system undergoes a set of continuous phase transitions related to discrete variations of the number of extended modes. The closing of the last current carrying mode is regarded as a phase transition of the electron system from metallic to dielectric state. The obtained results agree qualitatively with the observed 'anomalies' of resistivity of different two-dimensional electron and hole systems.

  14. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  15. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  16. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  17. Numerical simulations of quantum many-body systems with applications to superfluid-insulator and metal-insulator transitions

    International Nuclear Information System (INIS)

    Niyaz, P.

    1993-01-01

    Quantum Monte Carlo techniques were used to study two quantum many-body systems, the one-dimensional extended boson-Hubbard Hamiltonian, a model of superfluid-insulator quantum phase transitions, and the two-dimensional Holstein Model, a model for electron-phonon interactions. For the extended boson-Hubbard model, the authors studied the ground state properties at commensurate filling (density = 1) and half-integer filling (density = 1/2). At commensurate filling, the system has two possible insulating phases for strong coupling. If the on-site repulsion dominates, the system freezes into an insulating phase where each site is singly occupied. If the intersite repulsion dominates, doubly occupied and empty sites alternate. At weak coupling, the system becomes a superfluid. The authors investigated the order of phase transitions between these different phases. At half-integer filling, the authors found one strong coupling insulating phase, where singly occupied and empty sites alternate, and a weak coupling superfluid phase. The authors also investigated the possibility of a supersolid phase and found no clear evidence of such a new phase. For the electron-phonon (Holstein) model, the authors focused on the finite temperature phase transition from a metallic state to an insulating charge density wave (CDW) state as the temperature is lowered. The authors present the first calculation of the spectral density from Monte Carlo data for this system. The authors also investigated the formation of a CDW state as a function of various parameters characterizing the electron-phonon interactions. Using these numerical results as benchmarks, the authors then investigated different levels of Migdal approximations. The authors found the solutions of a set of gapped Migdal-Eliashberg equations agreed qualitatively with the Monte Carlo results

  18. Characteristics of the Mott transition and electronic states of high-temperature cuprate superconductors from the perspective of the Hubbard model

    Science.gov (United States)

    Kohno, Masanori

    2018-04-01

    A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy charge excitation) in a Mott insulator. This issue has attracted considerable attention particularly in relation to high-temperature cuprate superconductors, which exhibit electronic states near the Mott transition that are difficult to explain in conventional pictures. Here, from a new viewpoint of the Mott transition based on analyses of the Hubbard model, we review anomalous features observed in high-temperature cuprate superconductors near the Mott transition.

  19. Mott transition: Low-energy excitations and superconductivity

    International Nuclear Information System (INIS)

    Ioffe, L.B.; Larkin, A.I.

    1988-09-01

    It is possible that metal-dielectric transition does not result in changes of magnetic or crystallographic symmetry. In this case a fermionic spectrum is not changed at the transition, but additional low-energy excitations appear which can be described as a gauge field that has the same symmetry as an electromagnetic one. In the case of a non half-filled band gapless scalar Bose excitations also appear. Due to the presence of additional gauge field the physical conductivity is determined by the lowest conductivity of the Fermi or Bose subsystems. (author). 11 refs

  20. The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

    Energy Technology Data Exchange (ETDEWEB)

    Wojcik, W. [Politechnika Krakowska, Cracow (Poland)

    1995-12-31

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

  1. The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

    Energy Technology Data Exchange (ETDEWEB)

    Wojcik, W [Politechnika Krakowska, Cracow (Poland)

    1996-12-31

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

  2. Collective excitations and the nature of Mott transition in undoped gapped graphene

    International Nuclear Information System (INIS)

    Jafari, S A

    2012-01-01

    The particle-hole continuum (PHC) for massive Dirac fermions provides an unprecedented opportunity for the formation of two collective split-off states, one in the singlet and the other in the triplet (spin-1) channel, when the short-range interactions are added to the undoped system. Both states are close in energy and are separated from the continuum of free particle-hole excitations by an energy scale of the order of the gap parameter Δ. They both disperse linearly with two different velocities, reminiscent of spin-charge separation in Luttinger liquids. When the strength of Hubbard interactions is stronger than a critical value, the velocity of singlet excitation, which we interpret as a charge composite boson, becomes zero and renders the system a Mott insulator. Beyond this critical point the low-energy sector is left with a linearly dispersing triplet mode - a characteristic of a Mott insulator. The velocity of the triplet mode at the Mott criticality is twice the velocity of the underlying Dirac fermions. The phase transition line in the space of U and Δ is in qualitative agreement with our previous dynamical mean field theory calculations. (paper)

  3. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

    Science.gov (United States)

    Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

    2018-05-01

    We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

  4. Filling-driven Mott transition in SU(N ) Hubbard models

    Science.gov (United States)

    Lee, Seung-Sup B.; von Delft, Jan; Weichselbaum, Andreas

    2018-04-01

    We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU (N ) Fermi-Hubbard models, using the dynamical mean-field theory and the numerical renormalization group as its impurity solver. The compressibility shows a striking temperature dependence: near the critical end-point temperature, it is strongly enhanced in the metallic phase close to the insulating phase. We demonstrate that this compressibility enhancement is associated with the thermal suppression of the quasiparticle peak in the local spectral functions. We also explain that the asymmetric shape of the quasiparticle peak originates from the asymmetry in the dynamics of the generalized doublons and holons.

  5. Critical behavior near the Mott transition in the half-filled asymmetric Hubbard model

    Energy Technology Data Exchange (ETDEWEB)

    Hoang, Anh-Tuan, E-mail: hatuan@iop.vast.ac.vn [Institute of Physics, Vietnam Academy of Science and Technology, Hanoi (Viet Nam); Le, Duc-Anh [Faculty of Physics, Hanoi National University of Education, Xuan Thuy 136, Cau Giay, Hanoi 10000 (Viet Nam)

    2016-03-15

    We study the half-filled asymmetric Hubbard model within the two-site dynamical mean field theory. At zero temperature, explicit expressions of the critical interaction U{sub c} for the Mott transition and the local self-energy are analytically derived. Critical behavior of the quasiparticle weights and the double occupancy are obtained analytically as functions of the on-site interaction U and the hopping asymmetry r. Our results are in good agreement with the ones obtained by much more sophisticated theory.

  6. Mott Transition In Strongly Correlated Materials: Many-Body Methods And Realistic Materials Simulations

    Science.gov (United States)

    Lee, Tsung-Han

    Strongly correlated materials are a class of materials that cannot be properly described by the Density Functional Theory (DFT), which is a single-particle approximation to the original many-body electronic Hamiltonian. These systems contain d or f orbital electrons, i.e., transition metals, actinides, and lanthanides compounds, for which the electron-electron interaction (correlation) effects are too strong to be described by the single-particle approximation of DFT. Therefore, complementary many-body methods have been developed, at the model Hamiltonians level, to describe these strong correlation effects. Dynamical Mean Field Theory (DMFT) and Rotationally Invariant Slave-Boson (RISB) approaches are two successful methods that can capture the correlation effects for a broad interaction strength. However, these many-body methods, as applied to model Hamiltonians, treat the electronic structure of realistic materials in a phenomenological fashion, which only allow to describe their properties qualitatively. Consequently, the combination of DFT and many body methods, e.g., Local Density Approximation augmented by RISB and DMFT (LDA+RISB and LDA+DMFT), have been recently proposed to combine the advantages of both methods into a quantitative tool to analyze strongly correlated systems. In this dissertation, we studied the possible improvements of these approaches, and tested their accuracy on realistic materials. This dissertation is separated into two parts. In the first part, we studied the extension of DMFT and RISB in three directions. First, we extended DMFT framework to investigate the behavior of the domain wall structure in metal-Mott insulator coexistence regime by studying the unstable solution describing the domain wall. We found that this solution, differing qualitatively from both the metallic and the insulating solutions, displays an insulating-like behavior in resistivity while carrying a weak metallic character in its electronic structure. Second, we

  7. Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

    Science.gov (United States)

    Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

    2009-11-01

    Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

  8. Soft deconfinement — critical phenomena at the Mott transition in a field theory for quarks and mesons

    Science.gov (United States)

    Hüfner, J.; Klevansky, S. P.; Rehberg, P.

    1996-02-01

    Critical phenomena associated with Mott transitions are investigated in the finite temperature SUf(3) Nambu-Jona-Lasinio model, that describes quarks u, d, s and bound mesons π, K. Critical exponents for the behavior close to the Mott temperature TM are determined for the static properties of a pion, such as mπ( T), gπqq( T), fπ( T), π, and the pion polarizabilities αC, N, as well as for the behavior of mK( T), gKqs( T) fK( T) in the strange sector. The effect of the Mott transitions on the q overlineq and ππ scattering lengths and for hadronization cross sections σ q overlineq→ππ (T) is discussed. Divergencies that occur in these quantities at TM indicate an intransparence with respect to hadronic and photonic probes, much like the phenomenon of critical opalescence. Physically, the Mott transition models the deconfinement transition expected of QCD since it corresponds to a delocalizayion of the bound states when the temperature is raised above TM.

  9. Reliability of the one-crossing approximation in describing the Mott transition

    International Nuclear Information System (INIS)

    Vildosola, V; Roura-Bas, P; Pourovskii, L V; Manuel, L O

    2015-01-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal–insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed. (paper)

  10. Electronic Correlations, Jahn-Teller Distortions and Mott Transition to Superconductivity in Alkali-C60 Compounds

    Directory of Open Access Journals (Sweden)

    Alloul H.

    2012-03-01

    Full Text Available The discovery in 1991 of high temperature superconductivity (SC in A3C60 compounds, where A is an alkali ion, has been rapidly ascribed to a BCS mechanism, in which the pairing is mediated by on ball optical phonon modes. While this has lead to consider that electronic correlations were not important in these compounds, further studies of various AnC60 with n=1, 2, 4 allowed to evidence that their electronic properties cannot be explained by a simple progressive band filling of the C60 six-fold degenerate t1u molecular level. This could only be ascribed to the simultaneous influence of electron correlations and Jahn-Teller Distortions (JTD of the C60 ball, which energetically favour evenly charged C60 molecules. This is underlined by the recent discovery of two expanded fulleride Cs3C60 isomeric phases which are Mott insulators at ambient pressure. Both phases undergo a pressure induced first order Mott transition to SC with a (p, T phase diagram displaying a dome shaped SC, a common situation encountered nowadays in correlated electron systems. NMR experiments allowed us to study the magnetic properties of the Mott phases and to evidence clear deviations from BCS expectations near the Mott transition. So, although SC involves an electron-phonon mechanism, the incidence of electron correlations has an importance on the electronic properties, as had been anticipated from DMFT calculations.

  11. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Tao; Qi, Zeming, E-mail: zmqi@ustc.edu.cn; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Wang, Yu [Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Science, Shanghai 201204 (China); Liu, Miao [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  12. Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

    Science.gov (United States)

    Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

    2005-10-01

    Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

  13. Metal-insulator transition and superconductivity induced by Rh doping in the binary pnictides RuPn (Pn=P, As, Sb)

    Science.gov (United States)

    Hirai, Daigorou; Takayama, Tomohiro; Hashizume, Daisuke; Takagi, Hidenori

    2012-04-01

    Binary ruthenium pnictides, RuP and RuAs, with an orthorhombic MnP structure, were found to show a metal to a nonmagnetic insulator transition at TMI = 270 and 200 K, respectively. In the metallic region above TMI, a structural phase transition, accompanied with a weak anomaly in the resistivity and the magnetic susceptibility, indicative of a pseudogap formation, was identified at Ts = 330 and 280 K, respectively. These two transitions were suppressed by substituting Ru with Rh. We found superconductivity with a maximum Tc = 3.7 and 1.8 K in a narrow composition range around the critical point for the pseudogap phase, Rh content xc = 0.45 and 0.25 for Ru1-xRhxP and Ru1-xRhxAs, respectively, which may provide us with a nonmagnetic route to superconductivity at a quantum critical point.

  14. A Brillouin scattering study of La0.77Ca0.23MnO3 across the metal-insulator transition

    International Nuclear Information System (INIS)

    Seikh, Md Motin; Narayana, Chandrabhas; Sudheendra, L; Sood, A K; Rao, C N R

    2004-01-01

    Temperature-dependent Brillouin scattering studies have been carried out on La 0.77 Ca 0.23 MnO 3 across the paramagnetic insulator-ferromagnetic metal (I-M) transition (T C ∼ 230 K). The spectra show modes corresponding to a surface Rayleigh wave (SRW) and a high velocity pseudo-surface wave (HVPSAW) along with bulk acoustic waves (B1 and B2). The Brillouin shifts associated with the SRW and HVPSAW increase, whereas the B1 and B2 frequencies decrease, below T C . The temperature dependence of the SRW and HVPSAW modes is related to the increase in the elastic constant C 11 across the I-M transition. The decrease in frequency across the I-M transition of the bulk modes is understood to be due to enhanced self-energy corrections as a result of increased magnon-phonon interaction across the I-M transition. Correspondingly, these modes show a large increase in the full width at half maximum (FWHM) as the temperature decreases. We also observe a central peak whose width is maximum at T C

  15. Dynamical mean field study of the Mott transition in the half-filled Hubbard model on a triangular lattice

    OpenAIRE

    Aryanpour, K.; Pickett, W. E.; Scalettar, R. T.

    2006-01-01

    We employ dynamical mean field theory (DMFT) with a Quantum Monte Carlo (QMC) atomic solver to investigate the finite temperature Mott transition in the Hubbard model with the nearest neighbor hopping on a triangular lattice at half-filling. We estimate the value of the critical interaction to be $U_c=12.0 \\pm 0.5$ in units of the hopping amplitude $t$ through the evolution of the magnetic moment, spectral function, internal energy and specific heat as the interaction $U$ and temperature $T$ ...

  16. Mean-Field Scaling of the Superfluid to Mott Insulator Transition in a 2D Optical Superlattice.

    Science.gov (United States)

    Thomas, Claire K; Barter, Thomas H; Leung, Tsz-Him; Okano, Masayuki; Jo, Gyu-Boong; Guzman, Jennie; Kimchi, Itamar; Vishwanath, Ashvin; Stamper-Kurn, Dan M

    2017-09-08

    The mean-field treatment of the Bose-Hubbard model predicts properties of lattice-trapped gases to be insensitive to the specific lattice geometry once system energies are scaled by the lattice coordination number z. We test this scaling directly by comparing coherence properties of ^{87}Rb gases that are driven across the superfluid to Mott insulator transition within optical lattices of either the kagome (z=4) or the triangular (z=6) geometries. The coherent fraction measured for atoms in the kagome lattice is lower than for those in a triangular lattice with the same interaction and tunneling energies. A comparison of measurements from both lattices agrees quantitatively with the scaling prediction. We also study the response of the gas to a change in lattice geometry, and observe the dynamics as a strongly interacting kagome-lattice gas is suddenly "hole doped" by introducing the additional sites of the triangular lattice.

  17. Phase Separation in Doped Mott Insulators

    Directory of Open Access Journals (Sweden)

    Chuck-Hou Yee

    2015-04-01

    Full Text Available Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts that the transition is percolative and should exhibit Coulomb frustration.

  18. Metallic insulation transport and strainer clogging tests

    International Nuclear Information System (INIS)

    Hyvaerinen, J.; Hongisto, O.

    1994-06-01

    Experiments to probe the transport and clogging properties of metallic (metal reflective) insulation have been carried out in order to provide data for evaluation of their influence on the emergency core cooling and containment spray systems of the Finnish boiling water reactors in the event of a design basis accident. The specific metallic insulation tested was DARMET, provided by Darchem Engineering Ltd. The inner foils of Darmet are dimped. Available literature on the metallic insulation performance under design basis accident conditions has been reviewed. On the basis of the review a parametric approach has been chosen for the transport and clogging experiments. This approach involves testing a wide size range of various shapes of foil pieces. Five sets of experiments have been carried out. The first three sets investigate transport properties of the foil pieces, starting from sedimentation in stagnant waste pool and proceeding to transport in horizontal and vertically circulating flows. The clogging experiments have been addressed the differential pressures obtained due to accumulation of both pure and metallic and a mixture of metallic and fibrous (mineral wool) depris. (4 refs., 24 figs., 2 tabs.)

  19. A Seismic Analysis for Reflective Metal Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyuhyung; Kim, Taesoon [KHNP CRI, Daejeon (Korea, Republic of)

    2016-10-15

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components.

  20. A Seismic Analysis for Reflective Metal Insulation

    International Nuclear Information System (INIS)

    Kim, Kyuhyung; Kim, Taesoon

    2016-01-01

    U.S. NRC (Nuclear Regulatory Commission) GSI- 191 (Generic Safety Issue-191) is concerned about the head-loss of emergency core cooling pumps caused by calcium silicate insulation debris accumulated on a sump screen when a loss of coolant accident (LOCA). In order to cope with the concern, many nuclear plants in U. S. have been replacing calcium silicate insulation in containment building with reflective metal insulation (RMI). In Korea, RMI has been used for only reactor vessels recently constructed, but the RMI was imported. Therefore, we have been developing the domestic design of RMI to supply to nuclear power plants under operation and construction in relation to the GSI-191. This paper covers that the structural integrity of the RMI assembly was evaluated under SSE (safety shutdown earthquake) load. An analysis model was built for the seismic test system of a reflective metal insulation assembly and pre-stress, modal, and spectrum analysis for the model were performed using a commercial structural analysis code, ANSYS. According to the results of the analyses, the buckles fastening the RMIs showed the structural integrity under the required response spectrum containing the safety shutdown earthquake loads applied to main components in containment building. Consequently, since the RMI isn't disassembled under the SSE load, the RMI is judged not to affect safety related components

  1. Ultrashort hybrid metal-insulator plasmonic directional coupler.

    Science.gov (United States)

    Noghani, Mahmoud Talafi; Samiei, Mohammad Hashem Vadjed

    2013-11-01

    An ultrashort plasmonic directional coupler based on the hybrid metal-insulator slab waveguide is proposed and analyzed at the telecommunication wavelength of 1550 nm. It is first analyzed using the supermode theory based on mode analysis via the transfer matrix method in the interaction region. Then the 2D model of the coupler, including transition arms, is analyzed using a commercial finite-element method simulator. The hybrid slab waveguide is composed of a metallic layer of silver and two dielectric layers of silica (SiO2) and silicon (Si). The coupler is optimized to have a minimum coupling length and to transfer maximum power considering the layer thicknesses as optimization variables. The resulting coupling length in the submicrometer region along with a noticeable power transfer efficiency are advantages of the proposed coupler compared to previously reported plasmonic couplers.

  2. Orbital-selective Mott phase of Cu-substituted iron-based superconductors

    International Nuclear Information System (INIS)

    Liu, Yang; Zhao, Yang-Yang; Song, Yun

    2016-01-01

    We study the phase transition in Cu-substituted iron-based superconductors with a new developed real-space Green’s function method. We find that Cu substitution has strong effect on the orbital-selective Mott transition introduced by the Hund’s rule coupling. The redistribution of the orbital occupancy which is caused by the increase of the Hund’s rule coupling, gives rise to the Mott–Hubbard metal-insulator transition in the half-filled d xy orbital. We also find that more and more electronic states appear inside that Mott gap of the d xy orbital with the increase of Cu substitution, and the in-gap states around the Fermi level are strongly localized at some specific lattice sites. Further, a distinctive phase diagram, obtained for the Cu-substituted Fe-based superconductors, displays an orbital-selective insulating phase, as a result of the cooperative effect of the Hund’s rule coupling and the impurity-induced disorder. (paper)

  3. Mott Transition of Cerium Compound CeCu2Si2 in the Anderson ...

    African Journals Online (AJOL)

    The Exact-Diagonalization (ED) technique is applied to the Single Site Impurity Anderson Model (SIAM) and the Periodic Anderson Model (PAM) to elucidate the nature of the ground-state energy and the phase diagram of the two models. The results obtained show a smooth phase transition from an antiferromagnetic ...

  4. Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

    Directory of Open Access Journals (Sweden)

    M. Talafi Noghani

    2014-02-01

    Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

  5. Superconductivity, Mott-Hubbard states, and molecular orbital order in intercalated fullerides

    CERN Document Server

    Iwasa, Y

    2003-01-01

    This article reviews the current status of chemically doped fullerene superconductors and related compounds, with particular focus on Mott-Hubbard states and the role of molecular orbital degeneracy. Alkaline-earth metal fullerides produce superconductors of several kinds, all of which have states with higher valence than (C sub 6 sub 0) sup 6 sup - , where the second lowest unoccupied molecular orbital (the LUMO + 1 state) is filled. Alkali-metal-doped fullerides, on the other hand, afford superconductors only at the stoichiometry A sub 3 C sub 6 sub 0 (A denotes alkali metal) and in basically fcc structures. The metallicity and superconductivity of A sub 3 C sub 6 sub 0 compounds are destroyed either by reduction of the crystal symmetry or by change in the valence of C sub 6 sub 0. This difference is attributed to the narrower bandwidth in the A sub 3 C sub 6 sub 0 system, causing electronic instability in Jahn-Teller insulators and Mott-Hubbard insulators. The latter metal-insulator transition is driven by...

  6. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

    Science.gov (United States)

    Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley

    2017-08-01

    At present, machine learning systems use simplified neuron models that lack the rich nonlinear phenomena observed in biological systems, which display spatio-temporal cooperative dynamics. There is evidence that neurons operate in a regime called the edge of chaos that may be central to complexity, learning efficiency, adaptability and analogue (non-Boolean) computation in brains. Neural networks have exhibited enhanced computational complexity when operated at the edge of chaos, and networks of chaotic elements have been proposed for solving combinatorial or global optimization problems. Thus, a source of controllable chaotic behaviour that can be incorporated into a neural-inspired circuit may be an essential component of future computational systems. Such chaotic elements have been simulated using elaborate transistor circuits that simulate known equations of chaos, but an experimental realization of chaotic dynamics from a single scalable electronic device has been lacking. Here we describe niobium dioxide (NbO2) Mott memristors each less than 100 nanometres across that exhibit both a nonlinear-transport-driven current-controlled negative differential resistance and a Mott-transition-driven temperature-controlled negative differential resistance. Mott materials have a temperature-dependent metal-insulator transition that acts as an electronic switch, which introduces a history-dependent resistance into the device. We incorporate these memristors into a relaxation oscillator and observe a tunable range of periodic and chaotic self-oscillations. We show that the nonlinear current transport coupled with thermal fluctuations at the nanoscale generates chaotic oscillations. Such memristors could be useful in certain types of neural-inspired computation by introducing a pseudo-random signal that prevents global synchronization and could also assist in finding a global minimum during a constrained search. We specifically demonstrate that incorporating such

  7. Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

    Science.gov (United States)

    Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

    2013-03-01

    By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

  8. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  9. Plasma damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  10. Charging damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

  11. Plasma Damage in Floating Metal-Insulator-Metal Capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; Backer, E.; Coppens, P.

    2001-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  12. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    International Nuclear Information System (INIS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-01-01

    The layered compound BaCo 1−x Ni x S 2−y (0.05  1−x Ni x S 2−y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one

  13. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M. [Physics Department, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  14. Exploring the doping dependence of the Mott transition on X-ray irradiated crystals of {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, Sebastian; Tutsch, Ulrich; Naji, Ammar; Lang, Michael [Physikalisches Institut, Goethe-Universitaet Frankfurt (Germany); Sasaki, Takahiko [Institute for Materials Research, Tohoku University, Aoba-ku, Sendai, Miyagi (Japan)

    2011-07-01

    The quasi two-dimensional organic charge-transfer salt {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl exhibits a rich pressure vs. temperature phase diagram, including Mott-insulating and metallic phases separated by a first order transition line. By applying moderate pressures of {proportional_to}30 MPa (300 bar), the ratio of the kinetic energy to the onsite Coulomb repulsion t/U can be changed sufficiently to cross this phase transition line. Our objective is to study the effect of carrier doping and the accompanying changes of the first-order transition line and its second-order critical endpoint. We used X-ray irradiation to introduce charge carriers into the material, doping it away from half filling. We present resistivity data for the temperature range 5 K

  15. Gate-controlled metal-insulator transition in the LaAlO{sub 3}/SrTiO{sub 3} system with sub-critical LaAlO{sub 3} thickness

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Sung; Lee, Seung Ran; Chang, Jung-Won; Noh, Hyunho; Baasandorj, Lkhagvasuren; Shim, Seung-Bo; Kim, Jinhee [Korea Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Seung, Sang Keun; Shin, Hyun Sup; Song, Jonghyun [Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2012-12-15

    We studied the electrical conduction in the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface electron system with a sub-critical LAO layer thickness of {proportional_to}3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back-gate voltage. The superior gate-controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

  17. Quasi-continuous transition from a Fermi liquid to a spin liquid in κ-(ET)2Cu2(CN)3.

    Science.gov (United States)

    Furukawa, Tetsuya; Kobashi, Kazuhiko; Kurosaki, Yosuke; Miyagawa, Kazuya; Kanoda, Kazushi

    2018-01-22

    The Mott metal-insulator transition-a manifestation of Coulomb interactions among electrons-is known as a discontinuous transition. Recent theoretical studies, however, suggest that the transition is continuous if the Mott insulator carries a spin liquid with a spinon Fermi surface. Here, we demonstrate the case of a quasi-continuous Mott transition from a Fermi liquid to a spin liquid in an organic triangular-lattice system κ-(ET) 2 Cu 2 (CN) 3 . Transport experiments performed under fine pressure tuning have found that as the Mott transition is approached, the Fermi liquid coherence temperature continuously falls to the scale of kelvins, with a divergent quasi-particle decay rate on the metal side, and the charge gap continuously closes on the insulator side. A Clausius-Clapeyron analysis provides thermodynamic evidence for the extremely weak first-order nature of the transition. These results provide additional support for the existence of a spinon Fermi surface, which becomes an electron Fermi surface when charges are delocalized.

  18. Magnetic correlations in a classic Mott system

    International Nuclear Information System (INIS)

    Bao, W.; Broholm, C.; Aeppli, G.; Carter, S.A.; Dai, D.; Frost, C.D.

    1997-07-01

    The metal-insulator transition in V 2 O 3 causes a fundamental change in its magnetism. While the antiferromagnetic insulator (AFI) is a Heisenberg localized spin system, the antiferromagnetism in the strongly correlated metal is determined by a Fermi surface instability. Paramagnetic fluctuations in the metal and insulator represent similar spatial spin correlations, but are unrelated to the long range order in the AFI. The phase transition to the AFI induces an abrupt switching of magnetic correlations to a different magnetic wave vector. The AFI transition, therefore, is not a conventional spin order-disorder transition. Instead it is accounted for by an ordering in the occupation of the two degenerate d-orbitals at the Fermi level

  19. Transport and screen blockage characteristics of reflective metallic insulation materials

    International Nuclear Information System (INIS)

    Brocard, D.N.

    1984-01-01

    In the event of a LOCA within a nuclear power plant, it is possible for insulation debris to be generated by the break jet. Such debris has the potential for PWR sump screen (or BWR RHR suction inlet) blockage and thus can affect the long-term recirculation capability. In addition to the variables of break jet location and orientation, the types and quantities of debris which could be generated are dependent on the insulation materials employed. This experimental investigation was limited to reflective metallic insulation and components thereof. The study was aimed at determining the flow velocities needed to transport the insulation debris to the sump screens and the resulting modes of screen blockage. The tests revealed that thin metallic foils (0.0025 in. and 0.004 in.) could transport at low flow velocities, 0.2 to 0.5 ft/sec. Thicker foils (0.008 in.) transported at higher velocities, 0.4 to 0.8 ft/sec, and as fabricated half cylinder insulation units required velocities in excess of 1.0 ft/sec for transport. The tests also provided information on screen blockage patterns that showed blockage could occur at the lower portion of the screen as foils readily flipped on the screen when reaching it

  20. Nanoantenna couplers for metal-insulator-metal waveguide interconnects

    Science.gov (United States)

    Onbasli, M. Cengiz; Okyay, Ali K.

    2010-08-01

    State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

  1. Optical transmission theory for metal-insulator-metal periodic nanostructures

    Directory of Open Access Journals (Sweden)

    Blanchard-Dionne Andre-Pierre

    2016-11-01

    Full Text Available A semi-analytical formalism for the optical properties of a metal-insulator-metal periodic nanostructure using coupled-mode theory is presented. This structure consists in a dielectric layer in between two metallic layers with periodic one-dimensional nanoslit corrugation. The model is developed using multiple-scattering formalism, which defines transmission and reflection coefficients for each of the interface as a semi-infinite medium. Total transmission is then calculated using a summation of the multiple paths of light inside the structure. This method allows finding an exact solution for the transmission problem in every dimension regime, as long as a sufficient number of diffraction orders and guided modes are considered for the structure. The resonant modes of the structure are found to be related to the metallic slab only and to a combination of both the metallic slab and dielectric layer. This model also allows describing the resonant behavior of the system in the limit of a small dielectric layer, for which discontinuities in the dispersion curves are found. These discontinuities result from the out-of-phase interference of the different diffraction orders of the system, which account for field interaction for both inner interfaces of the structure.

  2. Infrared plasmonic nano-lasers based on Metal Insulator Metal waveguides

    NARCIS (Netherlands)

    Hill, M.T.

    2010-01-01

    We will present our latest results on metal-insulator-metal waveguide devices, in particular reducing the dimensions of devices and distributed feedback lasers. Also we will examine potential useful applications for metal nano-lasers.

  3. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-01-01

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

  4. Quantum phase transitions of strongly correlated electron systems

    International Nuclear Information System (INIS)

    Imada, Masatoshi

    1998-01-01

    Interacting electrons in solids undergo various quantum phase transitions driven by quantum fluctuations. The quantum transitions take place at zero temperature by changing a parameter to control quantum fluctuations rather than thermal fluctuations. In contrast to classical phase transitions driven by thermal fluctuations, the quantum transitions have many different features where quantum dynamics introduces a source of intrinsic fluctuations tightly connected with spatial correlations and they have been a subject of recent intensive studies as we see below. Interacting electron systems cannot be fully understood without deep analyses of the quantum phase transitions themselves, because they are widely seen and play essential roles in many phenomena. Typical and important examples of the quantum phase transitions include metal-insulator transitions, (2, 3, 4, 5, 6, 7, 8, 9) metal-superconductor transitions, superconductor-insulator transitions, magnetic transitions to antiferromagnetic or ferromagnetic phases in metals as well as in Mott insulators, and charge ordering transitions. Here, we focus on three different types of transitions

  5. Nevill Mott reminiscences and appreciations

    CERN Document Server

    Davis, E A

    1998-01-01

    Sir Nevill Mott was Britain''s last Winner of the Nobel Prize for Physics. This is a tribute to the life and work of Nobel Laureate Nevill Mott, a hugely admired and appreciated man, and one of this countries greatest ever scientists. It includes contributions from over 80 of his friends, family and colleagues, full of anecdotes and appreciations for this collossus of modern physics.

  6. Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

    KAUST Repository

    Wang, Lingfei; Li, Yongfeng; Bera, Ashok; Ma, Chun; Jin, Feng; Yuan, Kaidi; Yin, Wanjian; David, Adrian; Chen, Wei; Wu, Wenbin; Prellier, Wilfrid; Wei, Suhuai; Wu, Tao

    2015-01-01

    in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing

  7. Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2.

    Science.gov (United States)

    Moon, Byoung Hee; Bae, Jung Jun; Joo, Min-Kyu; Choi, Homin; Han, Gang Hee; Lim, Hanjo; Lee, Young Hee

    2018-05-24

    Quantum localization-delocalization of carriers are well described by either carrier-carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS 2 due to a dominating disorder.

  8. Coherence and correlations in a Mott insulator

    International Nuclear Information System (INIS)

    Gerbier, F.; Widera, A.; Foelling, S.; Mandel, O.; Gericke, T.; Bloch, I.

    2005-01-01

    The observation of the super fluid to Mott insulator transition has triggered an intense interest in studying ultracold quantum gases in optical lattices. Such a transition is commonly associated with the disappearance of the interference pattern observed when releasing a coherent (i.e. Bose condensed) ensemble from the lattice. In this talk, I will show that even in the insulating phase, the visibility of this interference pattern remains finite. Our results show that although long-range order is absent, short-range coherence still persists in a rather broad range, and that this can be identified as a characteristic feature of the system for large, but finite lattice depths. For even deeper lattices, the visibility is close to zero, and the interference pattern unobservable. I will explain that information is still present in such featureless images, and can be extracted by studying the density-density correlation function of the expanded cloud, as proposed theoretically. A sharp diffraction-like pattern observed in the correlations reveals the underlying lattice structure, and can be understood by generalizing the well-known Hanbury-Brown and Twiss effect to many bosonic sources '' emitting '' from each lattice site. This new detection method allows in principle the detection of spin ordering in a multi-component Mott insulator. As a first step in this direction, we have recently observed spin dynamics in a Mott insulator, where a spin-dependent collisional coupling induces strongly under damped Rabi oscillations between two-particle states with the same total magnetization. I will briefly report on these results. (author)

  9. Competition entre supraconductivite et magnetisme au voisinage de la transition de Mott dans le conducteur organique quasi-bidimensionnel k-(BEDT-TTF)2copper[N(CN)2]bromine

    Science.gov (United States)

    Fournier, David

    Les conducteurs organiques quasi-bidimensionnels kappa-ET2X presentent d'importantes similitudes avec les SCHT telles qu'une phase isolant de Mott, un regime de pseudogap et un etat supraconducteur. L'etude de leurs proprietes apparait donc complementaire. Parmi les interrogations persistantes concernant la physique de ces systemes, l'origine du (ou des) processus exotique d'appariement, responsable de la supraconductivite est le sujet suscitant l'interet le plus marque dans la communaute. L'hypothese d'un mecanisme lie a la proximite d'un etat antiferromagnetique est privilegiee. Une etape importante dans la resolution de cette problematique est l'identification de la symetrie du parametre d'ordre. D'apres de nombreux travaux sur les systemes fortement correles, la sonde ultrasonore, de par sa sensibilite aux excitations de quasiparticule a basse temperature, est consideree comme particulierement adaptee a l'etude de cette propriete. Cependant, son emploi necessite l'utilisation d'un compose metallique a basse temperature et completement supraconducteur. Le compose metallique organique kappa-ET 2Cu[N(CN)2]Br presente toutes les caracteristiques necessaires a l'etude de cette propriete. En effet, il est situe loin de la transition du premier ordre de Mott et est completement supraconducteur. De facon surprenante, ce systeme semble se coupler fortement avec le reseau ce qui augmente significativement la sensibilite de cette sonde aux proprietes du gaz electronique. Cependant, des difficultes techniques importantes, liees a la nature intrinseque de ce materiau, doivent etre surmontees pour proceder a des mesures suivant differentes polarisations. La presente etude a profondement modifie notre comprehension de ce systeme. En effet, ces mesures ont permis de constater que le kappa-ET2Cu[N(CN)2]Br est un compose qui est situe en bordure de la zone de coexistence entre la supraconductivite et le magnetisme, ce qui constitue un resultat totalement inattendu. De plus, la

  10. Magnetic and transport properties of Ni2MnGa-BaTiO3 metal-insulator particulate composite with percolation threshold

    International Nuclear Information System (INIS)

    Won, C.J.; Kambale, R.C.; Hur, N.

    2011-01-01

    Highlights: → The Ni 2 MnGa-BaTiO 3 type composites were first time prepared by solid state reaction. → Temperature dependent magnetic properties reveal two kinds of transitions in these composite. → The present materials show negative magnetoresistance effect. → The present studies on magnetic and electrical transport of metal/insulator (NMG/BTO) composites shows the resistivity change associated to filamentary conducting path at percolation threshold. - Abstract: Here we report the magnetic and transport properties of the metal/insulator (f NMG )Ni 2 MnGa/(1 - f NMG )BaTiO 3 composites. The X-ray diffraction study confirms the formation of both the phases in composite. The microstructure reveals that the conducting Ni 2 MnGa particles are well dispersed in an insulating BaTiO 3 matrix. Temperature dependent magnetization shows two transitions one above 300 K and other below 150 K. The temperature dependence resistivity near the percolation threshold f NMG = 0.4 had drastic changes which is higher than the f NMG = 0.5. Also the negative magnetoresistance effect was observed for the studied materials. We suggest that magnetic and transport properties at the percolation threshold can be adjusted by the strain from the surrounding insulator particle.

  11. Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

    International Nuclear Information System (INIS)

    Chand, Subhash; Bala, Saroj

    2007-01-01

    The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

  12. Thermally assisted ordering in Mott insulators

    Science.gov (United States)

    Sims, Hunter; Pavarini, Eva; Koch, Erik

    2017-08-01

    Landau theory describes phase transitions as the competition between energy and entropy: The ordered phase has lower energy, while the disordered phase has larger entropy. When heating the system, ordering is reduced entropically until it vanishes at the critical temperature. This picture implicitly assumes that the energy difference between the ordered and disordered phases does not change with temperature. We show that for orbital ordering in the Mott insulator KCuF3, this assumption fails qualitatively: entropy plays a negligible role, while thermal expansion energetically stabilizes the orbitally ordered phase to such an extent that no phase transition is observed. To understand this strong dependence on the lattice constant, we need to take into account the Born-Mayer repulsion between the ions. It is the latter, and not the Jahn-Teller elastic energy, which determines the magnitude of the distortion. This effect will be seen in all materials where the distortion expected from the Jahn-Teller mechanism is so large that the ions would touch. Our mechanism explains not only the absence of a phase transition in KCuF3, but even suggests the possibility of an inverted transition in closed-shell systems, where the ordered phase emerges only at high temperatures.

  13. Formal Valence, 3 d Occupation, and Charge Ordering Transitions

    Science.gov (United States)

    Pickett, Warren

    2014-03-01

    The metal-insulator transition (MIT), discovered by Verwey in the late 1930s, has been thought to be one of the best understood of MITs, the other ones being named after Wigner, Peierls, Mott, and Anderson. Continuing work on these transitions finds in some cases less and less charge to order, raising the fundamental question of just where the entropy is coming from, and just what is ordering. To provide insight into the mechanism of charge-ordering transitions, which conventionally are pictured as a disproportionation, I will (1) review and reconsider the charge state (or oxidation number) picture itself, (2) introduce new theoretical results for the rare earth nickelates (viz. YNiO3), the putative charge ordering compound AgNiO2, and the dual charge state insulator AgO, and (3) analyze cationic occupations of actual (not formal) charge, and work to reconcile the conundrums that arise. Several of the clearest cases of charge ordering transitions involve no disproportion; moreover, the experimental data used to support charge ordering can be accounted for within density functional based calculations that contain no charge transfer The challenge of modeling charge ordering transitions with model Hamiltonians will be discussed. Acknowledgment: Y. Quan, V. Pardo. Supported by NSF award DMR-1207622-0.

  14. Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

    Science.gov (United States)

    Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

    2018-04-01

    Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

  15. Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

    Science.gov (United States)

    Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

    2018-03-01

    Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

  16. All-optical bit magnitude comparator device using metal-insulator-metal plasmonic waveguide

    Science.gov (United States)

    Kumar, Santosh; Singh, Lokendra; Chen, Nan-Kuang

    2017-12-01

    A plasmonic metal-insulator-metal (MIM) waveguide has great success in confining the surface plasmon up to a deep subwavelength scale. The structure of a nonlinear Mach-Zehnder interferometer (MZI) using a plasmonic MIM waveguide has been analyzed. A one-bit magnitude comparator has been designed using an MZI and two linear control waveguides. The device works on the Kerr effect inside the plasmonics waveguide. The mathematical description of the device is explained. The simulation of the device is done using MATLAB® and the finite-difference time-domain (FDTD) method.

  17. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    Science.gov (United States)

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  18. Mode conversion in metal-insulator-metal waveguide with a shifted cavity

    Science.gov (United States)

    Wang, Yueke; Yan, Xin

    2018-01-01

    We propose a method, which is utilized to achieve the plasmonic mode conversion in metal-insulator-metal (MIM) waveguide, theoretically. Our proposed structure is composed of bus waveguides and a shifted cavity. The shifted cavity can choose out a plasmonic mode (a- or s-mode) when it is in Fabry-Perot (FP) resonance. The length of the shifted cavity L is carefully chosen, and our structure can achieve the mode conversion between a- and s-mode in the communication region. Besides, our proposed structure can also achieve plasmonic mode-division multiplexing. All the numerical simulations are carried on by the finite element method to verify our design.

  19. Magnetism and metal insulator transition in FeSi and FeGe. Ab Initio investigations of the electronic structure; Magnetismus und Metall-Isolator-Uebergang in FeSi und FeGe. Ab-initio-Untersuchungen der elektronischen Struktur

    Energy Technology Data Exchange (ETDEWEB)

    Neef, Matthias

    2007-03-19

    Aim of this thesis was to reach by a systematic study of different ab initio procedures an improved description of the electronic properties of FeSi and FeGe. Central result is the itinerant description of FeSi as a semiconductor in the neighbourhood of a ferromagnetic instability. The regardment of the nonlocal exchange in the effective one-particle approximation leads to a metastable magnetic state scarcely above the magnetic ground state. The application of the hybrid functional leads to a 1st order metal-isolator transition for large lattice parameters: FeSi transforms at increasement of the lattice parameter from an unmagnetic isolator to a magnetic metal. A similar behavior is found in the isostructural compound FeGe. The two systems FeSi and FeGe were systematically and detailedly analyzed by means of ab initio procedures. Thereby the structural, electronic, and magnetic properties were studied with DFT and HF calculations. Both calculations with spin polarization and without spin polarization were performed.

  20. Mott glass from localization and confinement

    Science.gov (United States)

    Chou, Yang-Zhi; Nandkishore, Rahul M.; Radzihovsky, Leo

    2018-05-01

    We study a system of fermions in one spatial dimension with linearly confining interactions and short-range disorder. We focus on the zero-temperature properties of this system, which we characterize using bosonization and the Gaussian variational method. We compute the static compressibility and ac conductivity, and thereby demonstrate that the system is incompressible, but exhibits gapless optical conductivity. This corresponds to a "Mott glass" state, distinct from an Anderson and a fully gapped Mott insulator, arising due to the interplay of disorder and charge confinement. We argue that this Mott glass phenomenology should persist to nonzero temperatures.

  1. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  2. Electron mobility, conductivity, and superconductivity near the metal-insulator transition

    International Nuclear Information System (INIS)

    Fiory, A.T.; Hebard, A.F.

    1984-01-01

    The disorder parameter k/sub F/l for amorphous InO/sub x/ is measured by a novel application of the surface electric field effect and is varied by thermal annealing. The normal-state conductivity and superconducting T/sub c/ both vary as (k/sub F/l) -2 and critical disorder occurs at k/sub F/lroughly-equal3/sup 1/2/, as a result of Anderson localization in this low-carrier density material

  3. Scaling behaviors of magnetoconductivity in amorphous indium oxide near the metal-insulator transition

    CERN Document Server

    Lee, Y J; Kim, Y S

    2000-01-01

    Magnetoconductivity is measured in an amorphous indium-oxide sample which is in the microscopic region. Two different scaling behaviors are observed for the magnetoconductivity The scaling behavior is determined by either the localization or the electron correlation effects, whichever becomes stronger more rapidly at a given temperature and magnetic field. Qualitative explanations are given for the observed scaling behaviors. A curve of a function of H/T sup 2 sup / sup 3 exists on which all our magnetoconductivity data lie.

  4. Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling.

    Science.gov (United States)

    Intronati, Guido A; Tamborenea, Pablo I; Weinmann, Dietmar; Jalabert, Rodolfo A

    2012-01-06

    We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches: an analytical diffusive-evolution calculation and a numerical finite-size scaling study of the spin-relaxation time.

  5. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    Science.gov (United States)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  6. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  7. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    Science.gov (United States)

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  8. Materials Characterization and Microelectronic Implementation of Metal-insulator Transition Materials and Phase Change Materials

    Science.gov (United States)

    2015-03-26

    materials like crystalline semiconductors, graphene , and composites, the materials discussed here could have a significant impact. This thesis investigates...diagnosis [124], crystallinity of pharmaceutical materials [125], materials diagnosis for restoration of paintings [126], and materials research [127...temperature dots and paint were placed on samples on the substrate. Temperature dots are typically used in the transportation of goods such as food in order

  9. Reply to ''Comment on 'Metal-insulator transition in random superconducting networks' ''

    International Nuclear Information System (INIS)

    Soukoulis, C.M.; Li, Q.; Grest, G.S.

    1990-01-01

    We address the remarks of Dominguez, Lopez, and Simonin [Phys. Rev.B 42, 8665 (1990); preceding paper] on the determination of the normal-to-superconducting (N-S) phase boundary in randomsuperconducting networks. We refute their claims that the disappearanceof the fine structure of the N-S boundary and the change of the critical exponent k for the slope of the critical field on(p-p c ) are due to the introduction of very weak links between nodes in the superconducting networks

  10. Superconductivity effects near metal-insulator transition in granular idnium films

    International Nuclear Information System (INIS)

    Belevtsev, B.I.; Komnik, Yu.F.; Fomin, A.V.

    1986-01-01

    The influence of granules superconductivity on the electric properties of granular indium films is investigated under the conditions of partial or full granular localization of electrons. At temperatures below 5 K a minimum of electric resistance and negative magnetoresistance are revealed which are attributed to the competition of hopping conductivity and Josephson intergranular tunneling of electrons

  11. Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-10-01

    Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

  12. Metal-insulator crossover in superconducting cuprates in strong magnetic fields

    International Nuclear Information System (INIS)

    Marchetti, P.A.; Su Zhaobin; Yu Lu

    2001-02-01

    The metal-insulator crossover of the in-plane resistivity upon temperature decrease, recently observed in several classes of cuprate superconductors, when a strong magnetic field suppresses the superconductivity, is explained using the U(1)xSU(2) Chern-Simons gauge field theory. The origin of this crossover is the same as that for a similar phenomenon observed in heavily underdoped cuprates without magnetic field. It is due to the interplay between the diffusive motion of the charge carriers and the 'peculiar' localization effect due to short-range antiferromagnetic order. We also calculate the in-plane transverse magnetoresistance which is in a fairly good agreement with available experimental data. (author)

  13. Pr-O-Al-N dielectrics for metal insulator semiconductor stacks

    Energy Technology Data Exchange (ETDEWEB)

    Henkel, Karsten; Torche, Mohamed; Sohal, Rakesh; Karavaev, Konstantin; Burkov, Yevgen; Schwiertz, Carola; Schmeisser, Dieter [Brandenburg University of Technology, Chair of Applied Physics and Sensors, K.-Wachsmann-Allee 1, 03046 Cottbus (Germany)

    2011-02-15

    This work focuses on praseodymium oxide films as a high-k material on silicon and silicon carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated to spectroscopic findings on this material system. Strong interfacial reactions between the praseodymium oxide and the semiconductor as well as silicon inter-diffusion into the high-k material are observed. The importance of a buffer layer is discussed and its optimisation is addressed, too. In particular the improvement of the performance by the introduction of an aluminium oxynitride buffer layer, which acts as an inter-diffusion barrier and reduces the leakage current, the interface state density and the equivalent oxide thickness is demonstrated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Unified computational model of transport in metal-insulating oxide-metal systems

    Science.gov (United States)

    Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

    2018-04-01

    A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

  15. Design of nanoring resonators made of metal-insulator-metal nanostrip waveguides

    International Nuclear Information System (INIS)

    Song, Jun-Hwa; Lee, Hyun-Shik; O, Beom-Hoan; Lee, Seung-Gol; Park, Se-Geun; Lee, El-Hang

    2010-01-01

    We report on the design of nanoring resonators made of metal-insulator-metal (MIM) nanostrip waveguides. The characteristics of the lightwave propagation through the silver-based MIM plasmonic waveguides with an air superstrate are examined. The effective refractive indices, the propagation losses, the bending losses, and the beat lengths are analyzed by using 2D and 3D finite element methods (FEMs). For the optimization of the nanoring resonators, we examined the resonant mode power and the Q factor with respect to the width of the MIM nanostrip and the separation between the ring resonator and the straight waveguide. We obtained an optimized nanoring resonator that had submicron diameters (R = 399 nm) and 3 rd -order resonances at a 1550-nm wavelength. These nanoring resonators will play an important role as the basic building blocks for the realization of nanoscale photonic integrated circuits.

  16. A new high-κ Al2O3 based metal-insulator-metal antifuse

    Science.gov (United States)

    Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang

    2018-06-01

    In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.

  17. Optical magnetism and plasmonic Fano resonances in metal-insulator-metal oligomers.

    Science.gov (United States)

    Verre, R; Yang, Z J; Shegai, T; Käll, M

    2015-03-11

    The possibility of achieving optical magnetism at visible frequencies using plasmonic nanostructures has recently been a subject of great interest. The concept is based on designing structures that support plasmon modes with electron oscillation patterns that imitate current loops, that is, magnetic dipoles. However, the magnetic resonances are typically spectrally narrow, thereby limiting their applicability in, for example, metamaterial designs. We show that a significantly broader magnetic response can be realized in plasmonic pentamers constructed from metal-insulator-metal (MIM) sandwich particles. Each MIM unit acts as a magnetic meta-atom and the optical magnetism is rendered quasi-broadband through hybridization of the in-plane modes. We demonstrate that scattering spectra of individual MIM pentamers exhibit multiple Fano resonances and a broad subradiant spectral window that signals the magnetic interaction and a hierarchy of coupling effects in these intricate three-dimensional nanoparticle oligomers.

  18. Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

    KAUST Repository

    Wang, Lingfei

    2015-06-22

    Searching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.

  19. Electron-optical systems for Mott polarimeters

    International Nuclear Information System (INIS)

    Fishkova, T.Ya.; Mamaev, Yu.A.; Ovsyannikova, I.P.; Petrov, V.N.; Shpak, E.V.

    1994-01-01

    Electron-optical systems, forming polarized electron beams from solid and gaseous sources at a Mott detector with operating potentials of 20 and 50 kV, have been theoretically investigated. The integral EOS creates a beam <2.6 nm in diameter at the target of the Mott detector for secondary electrons with energies of 1-20 eV and exit angles of 0 -60 . The differential EOS provides an energy resolution of 2-6% within the range of 3-2000 eV, the illumination being 5-13% for a 4π angle; at the target of the Mott detector it creates a beam of 1-6 mm in diameter. Both systems have been constructed at the laboratory of Spin-polarized Electron Spectroscopy (Department of Experimental Physics) at St. Petersburg State Technical University. ((orig.))

  20. A Mott-like State of Molecules

    International Nuclear Information System (INIS)

    Duerr, S.; Volz, T.; Syassen, N.; Bauer, D. M.; Hansis, E.; Rempe, G.

    2006-01-01

    We prepare a quantum state where each site of an optical lattice is occupied by exactly one molecule. This is the same quantum state as in a Mott insulator of molecules in the limit of negligible tunneling. Unlike previous Mott insulators, our system consists of molecules which can collide inelastically. In the absence of the optical lattice these collisions would lead to fast loss of the molecules from the sample. To prepare the state, we start from a Mott insulator of atomic 87Rb with a central region, where each lattice site is occupied by exactly two atoms. We then associate molecules using a Feshbach resonance. Remaining atoms can be removed using blast light. Our method does not rely on the molecule-molecule interaction properties and is therefore applicable to many systems

  1. Chemically Designed Metallic/Insulating Hybrid Nanostructures with Silver Nanocrystals for Highly Sensitive Wearable Pressure Sensors.

    Science.gov (United States)

    Kim, Haneun; Lee, Seung-Wook; Joh, Hyungmok; Seong, Mingi; Lee, Woo Seok; Kang, Min Su; Pyo, Jun Beom; Oh, Soong Ju

    2018-01-10

    With the increase in interest in wearable tactile pressure sensors for e-skin, researches to make nanostructures to achieve high sensitivity have been actively conducted. However, limitations such as complex fabrication processes using expensive equipment still exist. Herein, simple lithography-free techniques to develop pyramid-like metal/insulator hybrid nanostructures utilizing nanocrystals (NCs) are demonstrated. Ligand-exchanged and unexchanged silver NC thin films are used as metallic and insulating components, respectively. The interfaces of each NC layer are chemically engineered to create discontinuous insulating layers, i.e., spacers for improved sensitivity, and eventually to realize fully solution-processed pressure sensors. Device performance analysis with structural, chemical, and electronic characterization and conductive atomic force microscopy study reveals that hybrid nanostructure based pressure sensor shows an enhanced sensitivity of higher than 500 kPa -1 , reliability, and low power consumption with a wide range of pressure sensing. Nano-/micro-hierarchical structures are also designed by combining hybrid nanostructures with conventional microstructures, exhibiting further enhanced sensing range and achieving a record sensitivity of 2.72 × 10 4 kPa -1 . Finally, all-solution-processed pressure sensor arrays with high pixel density, capable of detecting delicate signals with high spatial selectivity much better than the human tactile threshold, are introduced.

  2. Hotspot related plasmon assisted multiphoton photocurrents in metal-insulator-metal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Differt, Dominik; Pfeiffer, Walter [Universitaet Bielefeld, Universitaetsstr. 25, 33615 Bielefeld (Germany); Diesing, Detlef [Universitaet Duisburg-Essen, Universitaetsstr. 5, 45117 Essen (Germany)

    2011-07-01

    Scanning photocurrent microscopy of metal-insulator-metal junctions (MIM) is used to investigate the mechanisms of femtosecond multiphoton photocurrent injection at liquid nitrogen temperature. The locally induced multiphoton photocurrent in a Ag-TaO-Ta MIM junction is measured in a scanning microscope cryostat under focused illumination (5{mu}m focus diameter, 800 nm, 30 fs, 80 MHz repetition rate). The intensity dependence reveals a mixture of two-photon and three-photon processes that are responsible for the photocurrent. Its lateral variation shows hotspot-like behaviour with significant magnitude variations on a 100 to 200 nm length scale. Assuming an injection current duration of 40fs the peak injection current density of about 10{sup 4} A cm{sup -2} is estimated - 10{sup 6} times higher than that for 400 nm continuous wave illumination slightly below the damage threshold. The simultaneously measured extinction of the incident radiation reveals a 20 to 30% increased absorption at the hotspots. We attribute the local photocurrent enhancement to the defect-assisted excitation of surface plasmon polaritons at the silver electrode leading to an enhanced local excitation.

  3. Direct Fabrication of Inkjet-Printed Dielectric Film for Metal-Insulator-Metal Capacitors

    Science.gov (United States)

    Cho, Cheng-Lin; Kao, Hsuan-ling; Wu, Yung-Hsien; Chang, Li-Chun; Cheng, Chun-Hu

    2018-01-01

    In this study, an inkjet-printed dielectric film that used a polymer-based SU-8 ink was fabricated for use in a metal-insulator-metal (MIM) capacitor. Thermal treatment of the inkjet-printed SU-8 polymer film affected its surface morphology, chemical structure, and surface wettability. A 20-min soft-bake at 60°C was applied to eliminate inkjet-printed bubbles and ripples. The ultraviolet-exposed SU-8 polymer film was crosslinked at temperatures between 120°C and 220°C and became disordered at 270°C, demonstrated using Fourier-transform infrared spectroscopy. A maximum SU-8 polymer film hard-bake temperature of 120°C was identified, and a printing process was subsequently employed because the appropriate water contact angle of the printed film was 79°. Under the appropriate inkjet printing conditions, the two-transmission-line method was used to extract the dielectric and electrical properties of the SU-8 polymer film, and the electrical behavior of the fabricated MIM capacitor was also characterized.

  4. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  5. Characterization of micro-resonator based on enhanced metal insulator semiconductor capacitor for glucose recognition.

    Science.gov (United States)

    Dhakal, Rajendra; Kim, E S; Jo, Yong-Hwa; Kim, Sung-Soo; Kim, Nam-Young

    2017-03-01

    We present a concept for the characterization of micro-fabricated based resonator incorporating air-bridge metal-insulator-semiconductor (MIS) capacitor to continuously monitor an individual's state of glucose levels based on frequency variation. The investigation revealed that, the micro-resonator based on MIS capacitor holds considerable promise for implementation and recognition as a glucose sensor for human serum. The discrepancy in complex permittivity as a result of enhanced capacitor was achieved for the detection and determination of random glucose concentration levels using a unique variation of capacitor that indeed results in an adequate variation of the resonance frequency. Moreover, the design and development of micro-resonator with enhanced MIS capacitor generate a resolution of 112.38 × 10 -3 pF/mg/dl, minimum detectable glucose level of 7.45mg/dl, and a limit of quantification of 22.58mg/dl. Additionally, this unique approach offers long-term reliability for mediator-free glucose sensing with a relative standard deviation of less than 0.5%. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

  6. Transport properties of metal-metal and metal-insulator heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Fadlallah Elabd, Mohamed Mostafa

    2010-06-09

    In this study we present results of electronic structure and transport calculations for metallic and metal-insulator interfaces, based on density functional theory and the non-equilibrium Green's function method. Starting from the electronic structure of bulk Al, Cu, Ag, and Au interfaces, we study the effects of different kinds of interface roughness on the transmission coefficient (T(E)) and the I-V characteristic. In particular, we compare prototypical interface distortions, including vacancies, metallic impurities, non-metallic impurities, interlayer, and interface alloy. We find that vacancy sites have a huge effect on transmission coefficient. The transmission coefficient of non-metallic impurity systems has the same behaviour as the transmission coefficient of vacancy system, since these systems do not contribute to the electronic states at the Fermi energy. We have also studied the transport properties of Au-MgO-Au tunnel junctions. In particular, we have investigated the influence of the thickness of the MgO interlayer, the interface termination, the interface spacing, and O vacancies. Additional interface states appear in the O-terminated configuration due to the formation of Au-O bonds. An increasing interface spacing suppresses the Au-O bonding. Enhancement of T(E) depends on the position and density of the vacancies (the number of vacancies per unit cell). (orig.)

  7. Systematic study of metal-insulator-metal diodes with a native oxide

    Science.gov (United States)

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-10-01

    In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  8. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  9. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    Science.gov (United States)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  10. Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

    Science.gov (United States)

    Kapri, Priyadarshini; Basu, Saurabh

    2018-01-01

    The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

  11. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    International Nuclear Information System (INIS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-01-01

    Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

  12. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  13. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J. W., E-mail: liu.jiangwei@nims.go.jp [International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Watanabe, E.; Oosato, H. [Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Koide, Y., E-mail: koide.yasuo@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  14. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  15. Controlled thermoelectric response of a tunable Rashba coupled metal-insulator-superconductor junction

    Science.gov (United States)

    Kapri, Priyadarshini; Adhikary, Priyanka; Sinha, Shubham; Basu, Saurabh

    2018-05-01

    Thermoelectric effect for metal, insulator and the superconductor junctions has been studied with Rashba spin-orbit coupling (RSOC) being present at the interfaces via modified Blonder-Tinkham-Klapwijk (BTK) theory. We find that the thermopower, as a function of an effective barrier potential that characterizes the intermediate insulating layer, displays an oscillatory behavior. Interesting interplay between the strength of RSOC and the effective barrier potential has been carried out in details in this regard. For specific ranges of the effective barrier potential, RSOC enhances the thermopower, while the reverse happens for other values. Moreover it is found that the effective barrier potential plays a crucial role in determining the thermopower spectrum. For a tunable Rashba coupling, the thermopower of the junction can be controlled with precision, which may useful for the thermoelectric applications, at low temperatures. Further the efficiency of the system is obtained for different pairing correlations of the superconducting lead where we find that the system with a d-wave symmetry is more efficient as compared to a s-wave correlation, in some selective regions of effective barrier potential. It is found that for some selective regions of effective barrier potential, the efficiency of the system increases with RSOC and the opposite happens for other values.

  16. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.

    2014-10-07

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  17. Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University (United Kingdom)

    2010-07-01

    Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.

  18. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

    Science.gov (United States)

    Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

    2017-05-01

    Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

  19. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  20. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

    KAUST Repository

    Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Mejia, Israel I.; Mao, Duo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Quevedo-Ló pez, Manuel Angel Quevedo; Pieper, Ron J.; Gnade, Bruce E.

    2011-01-01

    The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical

  1. High pressure metallization of Mott Insulators: Magnetic, structural and electronic properties

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Hearne, G.; Sterer, E.; Taylor, R.D.; Jeanloz, R.

    1993-01-01

    High pressure studies of the insulator-metal transition in the (TM)I 2 (TM = V, Fe, Co and Ni) compounds are described. Those divalent transition-metal iodides are structurally isomorphous and classified as Mott Insulators. Resistivity, X-ray diffraction and Moessbauer Spectroscopy were employed to investigate the electronic, structural, and magnetic properties as a function of pressure both on the highly correlated and on the metallic regimes

  2. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

    2017-01-01

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  3. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  4. Emergent Phenomena at Mott Interfaces

    Science.gov (United States)

    2016-11-03

    thickness for electron liquid formation in SrTiO3 embedded in GdTiO3, and standing-wave soft- and hard - x-ray photoemission to determine the energetic...Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation , Science, (03 2013): 1402. doi: 10.1126/science.1230512 L. Feigl, B.D. Schultz, S...S. Fadley. Band offsets in complex-oxide thin films and heterostructures ofSrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray

  5. Plasmonic reflectors and high-Q nano-cavities based on coupled metal-insulator-metal waveguides

    Directory of Open Access Journals (Sweden)

    Jing Chen

    2012-03-01

    Full Text Available Based on the contra-directional coupling, a composite structure consisting of two coupled metal-insulator-metal (MIM waveguides is proposed to act as an attractive plasmonic reflector. By introducing a defect into one of the MIM waveguides, we show that such a composite structure can be operated as a plasmonic nanocavity with a high quality factor. Both symmetric and anti-symmetric cavity modes are supported in the plasmonic cavity, and their resonance frequencies can be tuned by controlling the defect width. The present structures could have a significant impact for potential applications such as surface plasmon mirrors, filters and solid-state cavity quantum electrodynamics.

  6. Low leakage stoichiometric SrTiO{sub 3} dielectric for advanced metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, Mihaela; Kaczer, Ben; Redolfi, Augusto; Elshocht, Sven van; Jurczak, Malgorzata [imec Belgium, Leuven (Belgium); Afanas' ev, Valeri V. [Department of Physics and Astronomy, KU Leuven (Belgium); Sereni, Gabriele [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); Larcher, Luca [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); MDLab, Saint Christophe (Italy)

    2016-05-15

    Metal-insulator-metal capacitors (MIMCAP) with stoichiometric SrTiO{sub 3} dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr-rich STO seed layer, with the Ti-rich STO top layer. The resulted stoichiometric SrTiO{sub 3} would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr-rich STO which allow further equivalent oxide thickness downscaling. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. A Systematic Transport and Thermodynamic Study of Heavy Transition Metal Oxides with Hexagonal Structure

    Science.gov (United States)

    Butrouna, Kamal

    There is no apparent, dominant interaction in heavy transition metal oxides (TMO), especially in 5d-TMO, where all relevant interactions are of comparable energy scales, and therefore strongly compete. In particular, the spin-orbit interaction (SOI) strongly competes with the electron-lattice and on-site Coulomb interaction (U). Therefore, any tool that allows one to tune the relative strengths of SOI and U is expected to offer an opportunity for the discovery and study of novel materials. BaIrO3 is a magnetic insulator driven by SOI, whereas the isostructural BaRuO3 is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of SOI in the iridate. This dissertation thoroughly examines a wide array of newly observed novel phenomena induced by adjusting the relative strengths of SOI and U via a systematic chemical substitution of the Ru4+(4d 4) ions for Ir4+(5d5) ions in BaIrO3, i.e., in high quality single crystals of BaIr1--x RuxO3(0.0 ≤ x ≤ 1.0). Our investigation of structural, magnetic, transport and thermal properties reveals that Ru substitution directly rebalances the competing energies so profoundly that it generates a rich phase diagram for BaIr 1--xRuxO 3 featuring two major effects: (1) Light Ru doping (0 ≤ x ≤ 0.15) prompts a simultaneous and precipitous drop in both the magnetic ordering temperature TC and the electrical resistivity, which exhibits metal-insulator transition at around TC. (2) Heavier Ru doping (0.41 ≤ x ≤ 0.82) induces a robust metallic and spin frustration state. For comparison and contrast, we also substituted Rh4+(4d 5) ions for Ir4+(5d5) ions in BaIrO3, i.e. in BaIr1--xRhxO 3(0.0 ≤ x ≤ 0.1), where Rh only reduces the SOI, but without altering the band filling. Hence, this system remains tuned at the Mott instability and is very susceptible to disorder scattering which gives rise to Anderson localization. KEYWORDS: spin-orbit interaction, heavy transition metal oxides

  8. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  9. Evaluation of slot-to-slot coupling between dielectric slot waveguides and metal-insulator-metal slot waveguides.

    Science.gov (United States)

    Kong, Deqing; Tsubokawa, Makoto

    2015-07-27

    We numerically analyzed the power-coupling characteristics between a high-index-contrast dielectric slot waveguide and a metal-insulator-metal (MIM) plasmonic slot waveguide as functions of structural parameters. Couplings due mainly to the transfer of evanescent components in two waveguides generated high transmission efficiencies of 62% when the slot widths of the two waveguides were the same and 73% when the waveguides were optimized by slightly different widths. The maximum transmission efficiency in the slot-to-slot coupling was about 10% higher than that in the coupling between a normal slab waveguide and an MIM waveguide. Large alignment tolerance of the slot-to-slot coupling was also proved. Moreover, a small gap inserted into the interface between two waveguides effectively enhances the transmission efficiency, as in the case of couplings between a normal slab waveguide and an MIM waveguide. In addition, couplings with very wideband transmissions over a wavelength region of a few hundred nanometers were validated.

  10. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  11. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  12. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  13. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M., E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom)

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  14. The Statistical Fragmentation Theory of N. F. Mott

    Science.gov (United States)

    Grady, Dennis

    2004-07-01

    For a brief period during the height of World War II, Neville F. Mott left his position at the University of Bristol and headed up a concerted theoretical effort at Fort Halstead, UK, to investigate the operational science of weapons and armor technology. The seminal achievements resulting from the efforts of the participating scientists are extraordinary and have provided the basis for much of the continuing research in this field over the intervening six decades. N. F. Mott chose to study the phenomenon of the explosive-driven fragmentation of exploding shell cases. The approaches pursued by Mott are documented in several interim reports and open literature publications and offer a fascinating look into the insightful thinking and scientific methods of one of the preeminent physicists of the last century. This presentation offers a perspective into the several theoretical approaches pursued by Mott. In particular, the hallmark relation for the representation of exploding munitions fragmentation data to the present day is the Mott distribution. The efforts of Mott leading to this distribution are explored and a judgment is offered as to whether Mott himself would use this distribution today.

  15. Glass-like and Verwey transitions in magnetite in details

    Czech Academy of Sciences Publication Activity Database

    Janů, Zdeněk; Hadač, J.; Švindrych, Z.

    2007-01-01

    Roč. 310, - (2007), e203-e205 ISSN 0304-8853 Institutional research plan: CEZ:AV0Z10100520 Keywords : metal-insulator transition s and other electronic transition s * spin glass es and other random magnets * dynamic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  16. Characterization of Metal-Insulator-Transition (MIT) Phase Change Materials (PCM) for Reconfigurable Components, Circuits, and Systems

    Science.gov (United States)

    2013-03-01

    material, the thin film may be showing a plastic response. Table 2 shows the Young’s modulus of an amorphous GeTe witness sample at a variety of...Nanoelectronics (RSM), Serdang, Malaysia , 2011. [19] K. Van Caekenberghe, "RF MEMS on the radar," IEEE Microwave Magazine, vol. 10, no. 6, pp. 99-116

  17. Boundary critical phenomena and a quasiparticle-quasihole symmetric metal-insulator: transition in a constricted quantum hall circuit

    International Nuclear Information System (INIS)

    Lal, Siddhartha

    2007-09-01

    Motivated by surprises in recent experimental findings, we study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained as arising from the splitting of edge current caused by the difference in the filling fractions of the bulk (ν 1 ) and constriction (ν 2 ) quantum Hall fluid regions. We develop a hydrodynamic theory for bosonic edge modes inspired by this model. The constriction region splits the incident long-wavelength chiral edge density-wave excitations among the transmitting and reflecting edge states encircling it. The competition between two interedge tunneling processes taking place inside the constriction, related by a quasiparticle-quasihole (qp-qh) symmetry, is accounted for by computing the boundary theories of the system. This competition is found to determine the strong coupling configuration of the system. A separatrix of qp-qh symmetric gapless critical states is found to lie between the relevant RG flows to a metallic and an insulating configuration of the constriction system. This constitutes an interesting generalisation of the Kane-Fisher quantum impurity model. The features of the RG phase diagram are also confirmed by computing various correlators and chiral linear conductances of the system. In this way, our results find excellent agreement with many recent puzzling experimental results for the cases of ν 1 = 1/3, 1. We also discuss and make predictions for the case of a constriction system with ν 2 = 5/2. (author)

  18. Disorder-driven metal-insulator-transition assisted by interband Coulomb repulsion in a surface transfer doped electron system

    Science.gov (United States)

    Francisco Sánchez-Royo, Juan

    2012-12-01

    The two-dimensional conducting properties of the Si(111) \\sqrt {3} \\times \\sqrt {3} surface doped by the charge surface transfer mechanism have been calculated in the frame of a semiclassical Drude-Boltzmann model considering donor scattering mechanisms. To perform these calculations, the required values of the carrier effective mass were extracted from reported angle-resolved photoemission results. The calculated doping dependence of the surface conductance reproduces experimental results reported and reveals an intricate metallization process driven by disorder and assisted by interband interactions. The system should behave as an insulator even at relatively low doping due to disorder. However, when doping increases, the system achieves to attenuate the inherent localization effects introduced by disorder and to conduct by percolation. The mechanism found by the system to conduct appears to be connected with the increasing of the carrier effective mass observed with doping, which seems to be caused by interband interactions involving the conducting band and deeper ones. This mass enhancement reduces the donor Bohr radius and, consequently, promotes the screening ability of the donor potential by the electron gas.

  19. Low energy gamma induced radiation damage in YBCO: electrical resistivity and the induced metal - insulator transition behaviors

    International Nuclear Information System (INIS)

    Cruz, Carlos M.; Pinnera, Ibrahin; Leyva, Antonio; Abreu, Yamiel; Sirgado, Nicolas

    2015-01-01

    In the present contribution the superconducting YBCO ρ(T) dependence behavior on the irradiation dose and accumulative time are studied for gamma quanta of E γ = 132 keV ( 57 Co) and 1,25 MeV ( 60 Co) at room temperature. In both cases, possible radiation effects on grain boundary and intragrain zones are evaluated by means of different gamma ray microscopic interaction models. It was conclude that 57 Co gamma quanta (E γ = 132 keV) modules YBCO ρ(T) dependence behavior through enhanced oxygen vacancy diffusion motions which collapse the electron percolative conduction paths in the grain boundary zones, effects which are not observed by irradiation with 60 Co gamma quanta (E γ = 1,25 MeV), in which case main irradiation effects on the electrical conduction mechanisms are limited to the intragrain zones. (Author)

  20. Charge and spin diffusion on the metallic side of the metal-insulator transition: A self-consistent approach

    Science.gov (United States)

    Wellens, Thomas; Jalabert, Rodolfo A.

    2016-10-01

    We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and diffusion coefficient are calculated within different schemes of the self-consistent framework. The simplest of these schemes qualitatively reproduces previous phenomenological developments, while more elaborate calculations provide corrections that approach the values obtained in numerical simulations. The results are universal for zinc-blende semiconductors with electron conductance in the impurity band, and thus they are able to account for the measured spin-relaxation times of materials with very different physical parameters. From a general point of view, our theory opens a new perspective for describing the hopping dynamics in random quantum networks.

  1. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  2. k-dependent spectrum and optical conductivity near metal-insulator transition in multi-orbital hubbard bands

    International Nuclear Information System (INIS)

    Miura, Oki; Fujiwara, Takeo

    2006-01-01

    We apply the dynamical mean field theory (DMFT) combined with the iterative perturbation theory (IPT) to the doubly degenerate e g and the triply degenerate f 2g bands on a simple cubic lattice and a body-centered cubic lattice and calculate the spectrum and optical conductivity in arbitrary electron occupation. The spectrum simultaneously shows the effects of multiplet structure together with the electron ionization and affinity levels of different electron occupations, coherent peaks at the Fermi energy in the metallic phase and an energy gap at an integer filling of electrons for sufficiently large Coulomb U. We also discuss the critical value of the Coulomb U for degenerate orbitals on a simple cubic lattice and a body-centered cubic lattice. (author)

  3. Two-dimensional orbital ordering in d{sup 1} Mott insulator Sr{sub 2}VO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Viennois, R; Giannini, E; Teyssier, J; Elia, J; Van der Marel, D [DPMC, Universite de Geneve, 24 quai Ernest Ansermet, CH-1211 Geneve (Switzerland); Deisenhofer, J, E-mail: Romain.Viennois@unige.c [Institute of Physics, University of Augsburg, Augsburg (Germany)

    2010-01-15

    The Mott insulator Sr{sub 2}VO{sub 4} is a unique d{sup 1} two-dimensional compound exhibiting an orbital ordering transition. In addition to the orbital ordering transition at about 100 K, we discovered a ferromagnetic transition below 10 K, thus confirming the predictions of recent band structure calculations. The magnetic properties proved to be strongly sensitive to the material purity, the actual oxygen stoichiometry and the crystallographic parameters. An additional transition is observed at 125 K, which is believed to be due to structural modifications.

  4. Phase transition transistors based on strongly-correlated materials

    Science.gov (United States)

    Nakano, Masaki

    2013-03-01

    The field-effect transistor (FET) provides electrical switching functions through linear control of the number of charges at a channel surface by external voltage. Controlling electronic phases of condensed matters in a FET geometry has long been a central issue of physical science. In particular, FET based on a strongly correlated material, namely ``Mott transistor,'' has attracted considerable interest, because it potentially provides gigantic and diverse electronic responses due to a strong interplay between charge, spin, orbital and lattice. We have investigated electric-field effects on such materials aiming at novel physical phenomena and electronic functions originating from strong correlation effects. Here we demonstrate electrical switching of bulk state of matter over the first-order metal-insulator transition. We fabricated FETs based on VO2 with use of a recently developed electric-double-layer transistor technique, and found that the electrostatically induced carriers at a channel surface drive all preexisting localized carriers of 1022 cm-3 even inside a bulk to motion, leading to bulk carrier delocalization beyond the electrostatic screening length. This non-local switching of bulk phases is achieved with just around 1 V, and moreover, a novel non-volatile memory like character emerges in a voltage-sweep measurement. These observations are apparently distinct from those of conventional FETs based on band insulators, capturing the essential feature of collective interactions in strongly correlated materials. This work was done in collaboration with K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura. This work was supported by the Japan Society for the Promotion of Science (JSAP) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

  5. Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

    Energy Technology Data Exchange (ETDEWEB)

    Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

    2017-12-15

    HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

  6. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  7. A highly efficient surface plasmon polaritons excitation achieved with a metal-coupled metal-insulator-metal waveguide

    Directory of Open Access Journals (Sweden)

    Hongyan Yang

    2014-12-01

    Full Text Available We propose a novel metal-coupled metal-insulator-metal (MC-MIM waveguide which can achieve a highly efficient surface plasmon polaritons (SPPs excitation. The MC-MIM waveguide is formed by inserting a thin metal film in the insulator of an MIM. The introduction of the metal film, functioning as an SPPs coupler, provides a space for the interaction between SPPs and a confined electromagnetic field of the intermediate metal surface, which makes energy change and phase transfer in the metal-dielectric interface, due to the joint action of incomplete electrostatic shielding effect and SPPs coupling. Impacts of the metal film with different materials and various thickness on SPPs excitation are investigated. It is shown that the highest efficient SPPs excitation is obtained when the gold film thickness is 60 nm. The effect of refractive index of upper and lower symmetric dielectric layer on SPPs excitation is also discussed. The result shows that the decay value of refractive index is 0.3. Our results indicate that this proposed MC-MIM waveguide may offer great potential in designing a new SPPs source.

  8. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  9. Photoelectrical measurements of the local value of the contact potential difference in the metal-insulator semiconductor (MIS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Kudla, A.; Przewlocki, H.M.; Borowicz, L.; Brzezinska, D.; Rzodkiewicz, W

    2004-02-22

    In this work the local values of contact potential difference (CPD) and their distributions in the plane of the metal-insulator-semiconductor (MIS) structure's gate have been determined for the first time. This has been achieved by application of a focused beam of UV radiation from a laser source. The less than 20-{mu}m diameter of UV radiation beam allows determination of distributions of local CPD values in the plane of the gate. The CPD distribution is such that its values are highest far away from the gate edge regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. In this paper the method and the optical setup used to determine local values of CPD are described and example measurement results are given. The CPD distributions obtained have been confirmed by a series of independent measurements by other methods. It is believed that the CPD distributions obtained (as well as distributions of local values of other parameters) are due to the mechanical stress distributions under the gate of a MIS system.

  10. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    International Nuclear Information System (INIS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-01-01

    We demonstrate cuprous oxide (Cu 2 O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu 2 O layer. The devices are the most efficient of any Cu 2 O based MIS-Schottky solar cells reported to date

  11. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    Energy Technology Data Exchange (ETDEWEB)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex, E-mail: azettl@berkeley.edu [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kavli Energy Nanosciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Regan, William Raymond [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  12. General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion

    International Nuclear Information System (INIS)

    Wu, Xiaojing; Xu, Huihua; Zhao, Ni; Wang, Yu; Rogach, Andrey L; Shen, Yingzhong

    2015-01-01

    Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40–50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices. (paper)

  13. The evolution of Griffiths-phase-like features and colossal magnetoresistance in La1-xCaxMnO3 (0.18 ≤ x ≤ 0.27) across the compositional metal-insulator boundary

    International Nuclear Information System (INIS)

    Jiang Wanjun; Zhou Xuezhi; Williams, Gwyn; Mukovskii, Y; Privezentsev, R

    2009-01-01

    Detailed measurements of the magnetic and transport properties of single crystals of La 1-x Ca x MnO 3 (0.18 ≤ x ≤ 0.27) are summarized, and lead to the following conclusions. While temperature-dependent (magneto-) resistance measurements narrow the compositionally modulated metal-insulator (M-I) transition to lie between 0.19 ≤ x c ≤ 0.20 in the series studied, comparisons between the latter magnetic data provide the first unequivocal demonstration that (i) the presence of Griffiths-phase-like (GP) features do not guarantee colossal magnetoresistance (CMR), while confirming (ii) that neither are the appearance of such features a prerequisite for CMR. These data also reveal that (iii) whereas continuous magnetic transitions occur for 0.18 ≤ x ≤ 0.25, the universality class of these transitions belongs to that of a nearest-neighbour 3D Heisenberg model only for x≤0.20, beyond which complications due to GP-like behaviour occur. The implications of the variation (or lack thereof) in critical exponents and particularly critical amplitudes and temperatures across the compositionally mediated M-I transition support the assertion that the dominant mechanism underlying ferromagnetism across the M-I transition changes from ferromagnetic super-exchange (SE) stabilized by orbital ordering in the insulating phase to double-exchange (DE) in the orbitally disordered metallic regime. The variations in the acoustic spin-wave stiffness, D, and the coercive field, H C , support this conclusion. These SE and DE interaction mechanisms are demonstrated to not only belong to the same universality class but are also characterized by comparable coupling strengths. Nevertheless, their percolation thresholds are manifestly different in this system.

  14. Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altindal, Semsettin; Tataroglu, Adem; Dokme, Ilbilge [Faculty of Arts and Sciences, Physics Department, Gazi University, 06500, Ankara (Turkey)

    2005-01-31

    Dark and illuminated current-voltage (I-V) characteristics of Al/SiO{sub x}/p-Si metal-insulator-semiconductor (MIS) solar cells were measured at room temperature. In addition to capacitance-voltage (C-V) and conductance-voltage (G-V), characteristics are studied at a wide frequency range of 1kHz-10MHz. The dark I-V characteristics showed non-ideal behavior with an ideal factor of 3.2. The density of interface states distribution profiles as a function of (E{sub ss}-E{sub v}) deduced from the I-V measurements at room temperature for the MIS solar cells on the order of 10{sup 13}cm{sup -2}eV{sup -1}. These interface states were responsible for the non-ideal behavior of I-V, C-V and G-V characteristics. Frequency dispersion in capacitance for MIS solar cells can be interpreted only in terms of interface states. The interface states can follow the a.c. signal and yield an excess capacitance, which depends on the relaxation time of interface states and the frequency of the a.c. signal. It was observed that the excess capacitance C{sub o} caused by an interface state decreases with an increase of frequency. The capacitances characteristics of MIS solar cells are affected not only in interface states but also series resistance. Analysis of this data indicated that the high interface states and series resistance leads to lower values of open-circuit voltage, short-circuit current density, and fill factor. Experimental results show that the location of interface states and series resistance have a significant effect on I-V, C-V and G-V characteristics.

  15. MeV Mott polarimetry at Jefferson Lab

    International Nuclear Information System (INIS)

    Steigerwald, M.

    2001-01-01

    In the recent past, Mott polarimetry has been employed only at low electron beam energies (≅100 keV). Shortly after J. Sromicki demonstrated the first Mott scattering experiment on lead foils at 14 MeV (MAMI, 1994), a high energy Mott scattering polarimeter was developed at Thomas Jefferson National Accelerator Facility (5 MeV, 1995). An instrumental precision of 0.5% was achieved due to dramatic improvement in eliminating the background signal by means of collimation, shielding, time of flight and coincidence methods. Measurements for gold targets between 0.05 μm and 5 μm for electron energies between 2 and 8 MeV are presented. A model was developed to explain the depolarization effects in the target foils due to double scattering. The instrumental helicity correlated asymmetries were measured to smaller than 0.1%

  16. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  17. Mott scattering as a probe of long range QCD

    International Nuclear Information System (INIS)

    Bertulani, C.A.; Balantekin, A.B.

    1993-12-01

    We investigate the possibility of using the Mott scattering between identical nuclei to assess the existence of long range QCD, e.g., a color Van der Waals interaction, as suggested recently. Among other effects which were not considered before, the tail of the nuclear potential, emission of radiation by Bremsstrahlung, atomic screening, emission of delta-electrons, and the quasi-molecule binding are included in our calculations. We show that the sum of these effects can explain the observed shift in the Mott oscillations in a recent experiment. (orig.)

  18. On the interplay of Jahn-Teller physics and Mott physics in cuprates

    International Nuclear Information System (INIS)

    Kamimura, H; Ushio, H

    2008-01-01

    The extended two-story house model which is now called the Kamimura-Suwa (K-S) model has clarified how the interplay of Mott physics and Jahn-Teller physics plays an important role in determining the superconducting as well as metallic state of underdoped cuprates. In this paper it is first pointed out for underdoped cuprates that Mott physics leads to the existence of local antiferromagnetic order constructed from the localized spins while that the anti-Jahn-Teller effect as a central issue of Jahn-Teller physics leads to the existence of two kinds of orbitals parallel and perpendicular to a CuO 2 plane whose states have nearly the same energy. As a result of the interplay of both physics the K-S model has shown that the exchange interactions between the spins of a localized hole and of a carrier hole play an important role in producing the coexistence of superconductivity and antiferromagnetism in underdoped cuprates. The appearance of d-wave superconductivity even in the phonon-involved mechanism is also shown to be due to the interplay of Jahn-Teller physics and Mott Physics. Brief review of these facts as well as the K-S model is given in this paper. More outstanding result in this paper is that the origin of pseudogap in the deeply underdoped regime has been clarified. In this paper it is shown theoretically for the first time that the so-called T* pseudogap observed in ARPES, STM and tunneling experiments below T c in underdoped cuprates corresponds to the real transition of photo-excited electrons from the occupied states in the originally conduction band below the superconducting gap to a free-electron state above the vacuum level. Thus we conclude that the T* pseudogap in the underdoped cuprates which increases with decreasing the hole concentration is not 'pseudo', but a real gap which exists even below T c

  19. Conduction and rectification in NbO{sub x}- and NiO-based metal-insulator-metal diodes

    Energy Technology Data Exchange (ETDEWEB)

    Osgood, Richard M., E-mail: richard.m.osgood.civ@mail.mil; Giardini, Stephen; Carlson, Joel [US Army Natick Soldier Research Development and Engineering Center (NSRDEC), 15 General Greene Ave., Natick, Massachusetts 01760 (United States); Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States); Chin, Matthew; Nichols, Barbara; Dubey, Madan [RF and Electronics Division, US Army Research Laboratory, Adelphi, Maryland 20783 (United States); Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy [Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States); Parilla, Philip; Berry, Joseph; Ginley, David [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-09-15

    Conduction and rectification in nanoantenna-coupled NbO{sub x}- and NiO-based metal-insulator-metal (MIM) diodes (“nanorectennas”) are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current–voltage (I–V) curves, over 10 orders of magnitude in current density, from [NbO{sub x}(native)-Nb{sub 2}O{sub 5}]- and NiO-based samples with oxide thicknesses in the range of 5–36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I–V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I–V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I–V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I–V curves with our model, the barrier heights in Nb-(NbO{sub x}(native)-Nb{sub 2}O{sub 5})-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbO{sub x} (native)-Nb{sub 2}O{sub 5} dielectric properties improve, and the effective Pt-Nb{sub 2}O{sub 5} barrier height increases as the oxide thickness increases. An observation of direct current of ∼4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports

  20. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

    Science.gov (United States)

    Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

    2017-12-01

    The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

  1. Disordered Nanohole Patterns in Metal-Insulator Multilayer for Ultra-broadband Light Absorption: Atomic Layer Deposition for Lithography Free Highly repeatable Large Scale Multilayer Growth.

    Science.gov (United States)

    Ghobadi, Amir; Hajian, Hodjat; Dereshgi, Sina Abedini; Bozok, Berkay; Butun, Bayram; Ozbay, Ekmel

    2017-11-08

    In this paper, we demonstrate a facile, lithography free, and large scale compatible fabrication route to synthesize an ultra-broadband wide angle perfect absorber based on metal-insulator-metal-insulator (MIMI) stack design. We first conduct a simulation and theoretical modeling approach to study the impact of different geometries in overall stack absorption. Then, a Pt-Al 2 O 3 multilayer is fabricated using a single atomic layer deposition (ALD) step that offers high repeatability and simplicity in the fabrication step. In the best case, we get an absorption bandwidth (BW) of 600 nm covering a range of 400 nm-1000 nm. A substantial improvement in the absorption BW is attained by incorporating a plasmonic design into the middle Pt layer. Our characterization results demonstrate that the best configuration can have absorption over 0.9 covering a wavelength span of 400 nm-1490 nm with a BW that is 1.8 times broader compared to that of planar design. On the other side, the proposed structure retains its absorption high at angles as wide as 70°. The results presented here can serve as a beacon for future performance enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity.

  2. Single-spin addressing in an atomic Mott insulator

    DEFF Research Database (Denmark)

    Weitenberg, Christof; Endres, Manuel; Sherson, Jacob

    2011-01-01

    directly monitored the tunnelling quantum dynamics of single atoms in the lattice prepared along a single line, and observed that our addressing scheme leaves the atoms in the motional ground state. The results should enable studies of entropy transport and the quantum dynamics of spin impurities...... and quantum spin dynamics. Here we demonstrate how such control can be implemented at the most fundamental level of a single spin at a specific site of an optical lattice. Using a tightly focused laser beam together with a microwave field, we were able to flip the spin of individual atoms in a Mott insulator...... with sub-diffraction-limited resolution, well below the lattice spacing. The Mott insulator provided us with a large two-dimensional array of perfectly arranged atoms, in which we created arbitrary spin patterns by sequentially addressing selected lattice sites after freezing out the atom distribution. We...

  3. Wannier-Mott Excitons in Nanoscale Molecular Ices

    Science.gov (United States)

    Chen, Y.-J.; Muñoz Caro, G. M.; Aparicio, S.; Jiménez-Escobar, A.; Lasne, J.; Rosu-Finsen, A.; McCoustra, M. R. S.; Cassidy, A. M.; Field, D.

    2017-10-01

    The absorption of light to create Wannier-Mott excitons is a fundamental feature dictating the optical and photovoltaic properties of low band gap, high permittivity semiconductors. Such excitons, with an electron-hole separation an order of magnitude greater than lattice dimensions, are largely limited to these semiconductors but here we find evidence of Wannier-Mott exciton formation in solid carbon monoxide (CO) with a band gap of >8 eV and a low electrical permittivity. This is established through the observation that a change of a few degrees K in deposition temperature can shift the electronic absorption spectra of solid CO by several hundred wave numbers, coupled with the recent discovery that deposition of CO leads to the spontaneous formation of electric fields within the film. These so-called spontelectric fields, here approaching 4 ×107 V m-1 , are strongly temperature dependent. We find that a simple electrostatic model reproduces the observed temperature dependent spectral shifts based on the Stark effect on a hole and electron residing several nm apart, identifying the presence of Wannier-Mott excitons. The spontelectric effect in CO simultaneously explains the long-standing enigma of the sensitivity of vacuum ultraviolet spectra to the deposition temperature.

  4. DWPF Stage 2: precipitation test program at Mott

    International Nuclear Information System (INIS)

    Schmitz, M.A.

    1981-01-01

    This memorandum covers the results of the test program conducted at Mott Metallurgical to determine cross-flow filter performance on potassium/cesium tetraphenylborate (K/Cs TPB)-sodium titanate slurries. The test program was designed to provide essential basic operating data to supplement the 1000-gallon cold process tests planned at TNX and the shielded cell tests with actual waste supernate planned by Chemical Technology. The specific Mott Metallurgical test objectives are outlined in DPST-81-722. During the Mott Metallurgical test program an average filtrate flow rate of approximately 0.05 gpm/ft 2 was repeatedly demonstrated over an 8-hr run with 0.5 micron filter elements. Initial Fe/Al sludge concentrations up to 150 ppM did not affect filter performance. Rheologies of the K/Cs TPB-sodium titanate slurries up to 13% by weight, the maximum concentration achieved, are summarized. Several recommendations are made to act as a guide for optimal filter performance

  5. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

    2016-05-17

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  6. Experimental evidence for a Mott-Wigner glass phase of magnetite above the Verwey temperature

    International Nuclear Information System (INIS)

    Boekema, C.; Lichti, R.L.; Chan, K.C.B.; Brabers, V.A.M.; Denison, A.B.; Cooke, D.W.; Heffner, R.H.; Hutson, R.L.; Schillaci, M.E.

    1986-01-01

    New muon-spin-relaxation (μSR) results on magnetite are reported and discussed in light of earlier Moessbauer, neutron, and μSR results. Modification of the μSR anomaly (observed at 247 K in zero field), when an external magnetic field is applied, provides evidence that the anomaly results from cross relaxation between the muon Larmor precession and the electron-correlation process in the B sublattice. The combined results strongly indicate that phonon-assisted electron hopping is the principal conduction mechanism above the Verwey transition temperature (T/sub V/). Together with theoretical evidence, these data support Mott's suggestion that above T/sub V/ magnetite is in the Wigner-glass state

  7. Near-Field Nanoscopy of Metal-Insulator Phase Transitions Towards Synthesis of Novel Correlated Transition Metal Oxides and Their Interaction with Plasmon Resonances

    Science.gov (United States)

    2016-01-05

    metal and osmium (IV) oxide in the presence of stoichiometric amounts of magnesium oxide. The crystal structure was refined using powder X-ray...The blue octahedral represent [MO6]7-, the yellow circles are Li rich positions and the large green circles are magnesium rich positions material...M. Lazzeri, A. K. Geim, and C. Casiraghi, Raman Fingerprint of Aligned Graphene/H-Bn Superlattices, Nano Letters 13, 5242-5246 (2013). 13. Q. H

  8. Strongly correlated electron systems and neutron scattering. Magnetism, superconductivity, structural phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Katano, Susumu [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    Neutron scattering experiments in our group on strongly correlated electron systems are reviewed Metal-insulator transitions caused by structural phase transitions in (La{sub 1-x}Sr{sub x}) MnO{sub 3}, a novel magnetic transition in the CeP compound, correlations between antiferromagnetism and superconductivity in UPd{sub 2}Al{sub 3} and so forth are discussed. Here, in this note, the phase transition of Mn-oxides was mainly described. (author)

  9. Charge dynamics of the antiferromagnetically ordered Mott insulator

    Science.gov (United States)

    Han, Xing-Jie; Liu, Yu; Liu, Zhi-Yuan; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xie, Zhi-Yuan; Normand, B.; Xiang, Tao

    2016-10-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon-doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon-doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the

  10. Superconductivity induced by extremely high pressures in organic Mott-insulator β'-(BEDT-TTF)2IBrCl

    International Nuclear Information System (INIS)

    Kano, M; Uchiyama, K; Taniguchi, H; Hedo, M; Matsubayashi, K; Uwatoko, Y

    2009-01-01

    Previous research revealed that, at a pressure of 8.2 GPa, β'-(BEDT-TTF)2ICl2 possesses the highest transition temperature (T C ) among the organic conductors[1]. In the present work, transport studies under extremely high pressure of up to 10.0 GPa, using a cubic anvil press are reported for a related material, β'-(BEDT-TTF)2IBrCl which is an organic Mott-insulator in ambient pressure. Superconductivity with the highest T c (8.5 K, onset) was observed at P = 8.6 GPa.

  11. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

    Directory of Open Access Journals (Sweden)

    Kaleem Abbas

    2018-03-01

    Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

  12. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M. [Imec, Leuven 3001 (Belgium)

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  13. Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

    Science.gov (United States)

    Bidzinski, Piotr; Miczek, Marcin; Adamowicz, Boguslawa; Mizue, Chihoko; Hashizume, Tamotsu

    2011-04-01

    The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias (-0.1 to -3 V) and light intensity (109 to 1020 photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on-off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance-voltage-light intensity measurements was also proposed.

  14. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    International Nuclear Information System (INIS)

    Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-01-01

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

  15. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  16. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  17. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

    Science.gov (United States)

    Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

    2018-05-01

    In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

  18. Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2018-04-01

    Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  19. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  20. Charge dynamics of the antiferromagnetically ordered Mott insulator

    International Nuclear Information System (INIS)

    Han, Xing-Jie; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xiang, Tao; Liu, Yu; Liu, Zhi-Yuan; Xie, Zhi-Yuan; Normand, B

    2016-01-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of

  1. Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

    2016-07-01

    Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

  2. Inhomogeneous field induced magnetoelectric effect in Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Boulaevskii, Lev N [Los Alamos National Laboratory; Batista, Cristian D [Los Alamos National Laboratory

    2008-01-01

    We consider a Mott insulator like HoMnO{sub 3} whose magnetic lattice is geometrically frustrated and comprises a 3D array of triangular layers with magnetic moments ordered in a 120{sup o} structure. We show that the effect of a uniform magnetic field gradient, {gradient}H, is to redistribute the electronic charge of the magnetically ordered phase leading to a unfirom electric field gradient. The resulting voltage difference between the crystal edges is proportional to the square of the crystal thickness, or inter-edge distance, L. It can reach values of several volts for |{gradient}H| {approx} 0.01 T/cm and L {approx_equal} 1mm, as long as the crystal is free of antiferromagnetic domain walls.

  3. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Le, Son Phuong; Ui, Toshimasa; Nguyen, Tuan Quy; Shih, Hong-An; Suzuki, Toshi-kazu, E-mail: tosikazu@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-05-28

    Using aluminum titanium oxide (AlTiO, an alloy of Al{sub 2}O{sub 3} and TiO{sub 2}) as a high-k gate insulator, we fabricated and investigated AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. From current low-frequency noise (LFN) characterization, we find Lorentzian spectra near the threshold voltage, in addition to 1/f spectra for the well-above-threshold regime. The Lorentzian spectra are attributed to electron trapping/detrapping with two specific time constants, ∼25 ms and ∼3 ms, which are independent of the gate length and the gate voltage, corresponding to two trap level depths of 0.5–0.7 eV with a 0.06 eV difference in the AlTiO insulator. In addition, gate leakage currents are analyzed and attributed to the Poole-Frenkel mechanism due to traps in the AlTiO insulator, where the extracted trap level depth is consistent with the Lorentzian LFN.

  4. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

    Science.gov (United States)

    Hanna, Mina J.; Zhao, Han; Lee, Jack C.

    2012-10-01

    We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

  5. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  6. Extracting and focusing of surface plasmon polaritons inside finite asymmetric metal/insulator/metal structure at apex of optical fiber by subwavelength holes

    Science.gov (United States)

    Oshikane, Yasushi; Murai, Kensuke; Nakano, Motohiro

    2013-09-01

    We have been studied a finite asymmetric metal-insulator-metal (MIM) structure on glass plate for near-future visible light communication (VLC) system with white LED illuminations in the living space (DOI: 10.1117/12.929201). The metal layers are vacuum-evaporated thin silver (Ag) films (around 50 nm and 200 nm, respectively), and the insulator layer (around 150 nm) is composed of magnesium fluoride (MgF2). A characteristic narrow band filtering of the MIM structure at visible region might cause a confinement of intense surface plasmon polaritons (SPPs) at specific monochromatic frequency inside a subwavelength insulator layer of the MIM structure. Central wavelength and depth of such absorption dip in flat spectral reflectance curve is controlled by changing thicknesses of both insulator and thinner metal layers. On the other hand, we have proposed a twin-hole pass-through wave guide for SPPs in thick Ag film (DOI: 10.1117/12.863587). At that time, the twin-hole converted a incoming plane light wave into a pair of channel plasmon polaritons (CPPs), and united them at rear surface of the Ag film. This research is having an eye to extract, guide, and focus the SPPs through a thicker metal layer of the MIM with FIBed subwavelength pass-through holes. The expected outcome is a creation of noble, monochromatic, and tunable fiber probe for scanning near-field optical microscopes (SNOMs) with intense white light sources. Basic experimental and FEM simulation results will be presented.

  7. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

    KAUST Repository

    Wondmagegn, Wudyalew T.

    2011-04-01

    The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.

  8. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

    2008-09-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

  9. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    Science.gov (United States)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  10. Numerical studies on a plasmonic temperature nanosensor based on a metal-insulator-metal ring resonator structure for optical integrated circuit applications

    Science.gov (United States)

    Al-mahmod, Md. Jubayer; Hyder, Rakib; Islam, Md Zahurul

    2017-07-01

    A nanosensor, based on a metal-insulator-metal (MIM) plasmonic ring resonator, is proposed for potential on-chip temperature sensing and its performance is evaluated numerically. The sensor components can be fabricated by using planar processes on a silicon substrate, making its manufacturing compatible to planar electronic fabrication technology. The sensor, constructed using silver as the metal rings and a thermo-optic liquid ethanol film between the metal layers, is capable of sensing temperature with outstanding optical sensitivity, as high as -0.53 nm/°C. The resonance wavelength is found to be highly sensitive to the refractive index of the liquid dielectric film. The resonance peak can be tuned according to the requirement of intended application by changing the radii of the ring resonator geometries in the design phase. The compact size, planar and silicon-based design, and very high resolutions- these characteristics are expected to make this sensor technology a preferred choice for lab-on-a-chip applications, as compared to other contemporary sensors.

  11. Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

    Science.gov (United States)

    Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

    2017-06-28

    β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

  12. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2008-01-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

  13. Can disorder drive a Mott insulator into a metal in 2D?

    International Nuclear Information System (INIS)

    Trivedi, Nandini; Heidarian, Dariush

    2006-01-01

    We find that isoelectronic disorder generates novel phases in a Mott insulator at half filling. For both binary disorder potentials and for random site disorder models, the Mott gap is destroyed locally generating puddles of gapless excitations. With increasing disorder, these puddles grow and rather surprising, form an inhomogeneous metal in 2D. Antiferromagnetic long range order is more robust than the Mott gap and persists into the metal, getting destroyed close to a critical disorder where doubly occupied and empty sites percolate. (author)

  14. Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3 as insulator layer for energy harvesting applications

    Science.gov (United States)

    Inac, Mesut; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

    2015-09-01

    Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.

  15. Simultaneous valence shift of Pr and Tb ions at the spin-state transition in (Pr.sub.1-y./sub.Tb.sub.y./sub.).sub.0.7./sub.Ca.sub.0.3./sub.CoO.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Fujishiro, H.; Naito, T.; Takeda, D.; Yoshida, N.; Watanabe, T.; Nitta, K.; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2013-01-01

    Roč. 87, č. 15 (2013), "155153-1"-"155153-7" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/0713 Institutional support: RVO:68378271 Keywords : metal-insulator transitions and other electronic transitions * X-ray absorption spectra * spin crossover Subject RIV: BE - Theoretical Physics Impact factor: 3.664, year: 2013

  16. An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip

    2002-03-19

    One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

  17. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    CSIR Research Space (South Africa)

    Akande, AA

    2015-02-01

    Full Text Available We report on the magnetic property of 0.67–WO3+0.33–VOx mixture film deposit on the corning glass substrate using the chemical sol–gel and atmospheric pressure chemical vapour deposition (APCVD) methods. The XRD and Raman spectroscopy confirm...

  18. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio; Eyert, V.; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid

  19. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio

    2013-07-17

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

  20. Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

    Czech Academy of Sciences Publication Activity Database

    Janssens, S.D.; Pobeidinskas, P.; Vacík, Jiří; Petráková, Vladimíra; Ruttens, B.; D´Haen, J.; Nesládek, M.; Haenen, K.; Wagner, P.

    2011-01-01

    Roč. 13, č. 9 (2011), 083008/1-083008/17 ISSN 1367-2630 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : Nanocrystalline diamond * Boron * Magnetotransport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.177, year: 2011

  1. Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

    International Nuclear Information System (INIS)

    Janssens, S D; Pobedinskas, P; Ruttens, B; D'Haen, J; Nesladek, M; Haenen, K; Wagner, P; Vacik, J; Petrakova, V

    2011-01-01

    A systematic study on the morphology and electronic properties of thin heavily boron-doped nanocrystalline diamond (NCD) films is presented. The films have nominally the same thickness (∼150 nm) and are grown with a fixed B/C ratio (5000 ppm) but with different C/H ratios (0.5-5%) in the gas phase. The morphology of the films is investigated by x-ray diffraction and atomic force microscopy measurements, which confirm that lower C/H ratios lead to a larger average grain size. Magnetotransport measurements reveal a decrease in resistivity and a large increase in mobility, approaching the values obtained for single-crystal diamond as the average grain size of the films increases. In all films, the temperature dependence of resistivity decreases with larger grains and the charge carrier density and mobility are thermally activated. It is possible to separate the intra- and intergrain contributions for resistivity and mobility, which indicates that in these complex systems Matthiessen's rule is followed. The concentration of active charge carriers is reduced when the boron-doped NCD is grown with a lower C/H ratio. This is due to lower boron incorporation, which is confirmed by neutron depth profiling.

  2. Hundness versus Mottness in a three-band Hund model with relevance for iron-pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Stadler, Katharina M.; Delft, Jan von; Weichselbaum, Andreas [Ludwig Maximilians University, Munich (Germany); Yin, Zhiping; Kotliar, Gabriel [Rutgers University, New Jersey (United States)

    2016-07-01

    The recently discovered iron pnictide superconductors (as well as chalcogenides, ruthenates, and other 4d transition metal oxides) show puzzling anomalous properties, like a coherence-incoherence crossover, also in the normal state. While there is consensus about strong correlation effects playing a key role in these materials, their precise origin (Coulomb repulsion or Hund's rule coupling between electrons of different orbitals) has been under debate as one of the major open questions in the field many years. In a recent detailed study of the Hund metal problem the coherence-incoherence crossover was shown to be connected to spin-orbital separation and to be clearly driven by Hund's rule coupling. In order to better understand the differences between Mott insulators and Hund metals we explore the phase diagram for a three-band model with Coulomb repulsion and Hund's rule coupling on a Bethe lattice at 1/3 filling using the numerical renormalization group to obtain a numerically exact dynamical mean-field theory solution.

  3. Antiferromagnetic Mott insulating state in the single-component molecular material Pd(tmdt)2

    Science.gov (United States)

    Takagi, Rina; Sari, Dita Puspita; Mohd-Tajudin, Saidah Sakinah; Ashi, Retno; Watanabe, Isao; Ishibashi, Shoji; Miyagawa, Kazuya; Ogura, Satomi; Zhou, Biao; Kobayashi, Akiko; Kanoda, Kazushi

    2017-12-01

    A family of compounds built by a single molecular species, M (tmdt) 2, with a metal ion, M , and organic ligands, tmdt, affords diverse electronic phases due to M -dependent interplays between d electrons in M , and π electrons in tmdt. We investigated the spin state in Pd (tmdt) 2 , a π -electron system without a d -electron contribution, through 1H nuclear magnetic resonance (NMR) and muon-spin resonance experiments. The temperature profiles of the NMR linewidth, relaxation rate, and asymmetry parameter in muon decay show an inhomogeneous antiferromagnetic order with moments distributed around ˜0.1 μB that onsets at above 100 K. This result provides an example of the antiferromagnetic order in a pure π -electron system in M (tmdt) 2, and it demonstrates that correlation among the π electrons is so strong as to give the Néel temperature over 100 K. The small and inhomogeneous moments are understandable as the crucial disorder effect in correlated electrons situated near the Mott transition.

  4. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  5. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  6. Effect of annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna Lakshmi, B.; Rajagopal Reddy, V.; Janardhanam, V. [Sri Venkateswara University, Department of Physics, Tirupati (India); Siva Pratap Reddy, M.; Lee, Jung-Hee [Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu (Korea, Republic of)

    2013-11-15

    We report on the effect of an annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured Schottky barrier height ({Phi} {sub bo}) and ideality factor n values of the as-deposited Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure are 0.93 eV (I-V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 {sup circle} C for 1 min under nitrogen ambient. When the contact is annealed at 600 {sup circle} C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C-V measurements are higher than those obtained from I-V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung's functions are also used to calculate the barrier height ({Phi} {sub bo}), ideality factor (n), and series resistance (R{sub s}) of the Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample. (orig.)

  7. Finite-temperature dynamics of the Mott insulating Hubbard chain

    Science.gov (United States)

    Nocera, Alberto; Essler, Fabian H. L.; Feiguin, Adrian E.

    2018-01-01

    We study the dynamical response of the half-filled one-dimensional Hubbard model for a range of interaction strengths U and temperatures T by a combination of numerical and analytical techniques. Using time-dependent density matrix renormalization group computations we find that the single-particle spectral function undergoes a crossover to a spin-incoherent Luttinger liquid regime at temperatures T ˜J =4 t2/U for sufficiently large U >4 t . At smaller values of U and elevated temperatures the spectral function is found to exhibit two thermally broadened bands of excitations, reminiscent of what is found in the Hubbard-I approximation. The dynamical density-density response function is shown to exhibit a finite-temperature resonance at low frequencies inside the Mott gap, with a physical origin similar to the Villain mode in gapped quantum spin chains. We complement our numerical computations by developing an analytic strong-coupling approach to the low-temperature dynamics in the spin-incoherent regime.

  8. Coulomb effects in relativistic laser-assisted Mott scattering

    International Nuclear Information System (INIS)

    Ngoko Djiokap, J.M.; Kwato Njock, M.G.; Tetchou Nganso, H.M.

    2004-09-01

    We reconsider the influence of the Coulomb interaction on the process of relativistic Mott scattering in a powerful electromagnetic plane wave for which the ponderomotive energy is of the order of the magnitude of the electron's rest mass. Coulomb effects of the bare nucleus on the laser-dressed electron are treated more completely than in the previous work of Li et al. [J. Phys. B: At. Mol. Opt. Phys. 37 (2004) 653]. To this end we use Coulomb-Dirac-Volkov functions to describe the initial and the final states of the electron. First-order Born differential cross sections of induced and inverse bremsstrahlung are obtained for circularly and linearly polarized laser light. Numerical calculations are carried out from both polarizations, for various nucleus charge values, three angular configurations and an incident energy in the MeV range. It is found that for parameters used in the present work, incorporating Coulomb effects of the target nucleus either in the initial state or in the final state yields cross sections which are quite similar whatever the scattering geometry and polarization considered. When Coulomb distortions are included in both states, the cross sections are strongly modified with the increase of Z, as compared to the outcome of the prior form of the T-matrix treatment. (author)

  9. TRANSIT

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. TRANSIT. SYSTEM: DETERMINE 2D-POSITION GLOBALLY BUT INTERMITTENT (POST-FACTO). IMPROVED ACCURACY. PRINCIPLE: POLAR SATELLITES WITH INNOVATIONS OF: GRAVITY-GRADIENT ATTITUDE CONTROL; DRAG COMPENSATION. WORKS ...

  10. B-cell lymphoma with Mott cell differentiation in two young adult dogs.

    Science.gov (United States)

    Stacy, Nicole I; Nabity, Mary B; Hackendahl, Nicole; Buote, Melanie; Ward, Jennifer; Ginn, Pamela E; Vernau, William; Clapp, William L; Harvey, John W

    2009-03-01

    Two young adult dogs with gastrointestinal signs were each found to have an intra-abdominal mass based on physical examination and diagnostic imaging. On exploratory laparotomy, small intestinal masses and mesenteric lymphadenopathy were found in both dogs; a liver mass was also found in dog 1. Cytologic and histologic examination of intestinal and liver masses and mesenteric lymph nodes revealed 2 distinct lymphoid cell populations: lymphoblasts and atypical Mott cells. With Romanowsky stains, the atypical Mott cells contained many discrete, clear to pale blue cytoplasmic inclusions consistent with Russell bodies that were positive by immunohistochemistry for IgM and CD79a in both dogs and for IgG in dog 2. The Mott cells and occasional lymphoblasts stained strongly positive with periodic acid-Schiff. Using flow cytometric immunophenotyping in dog 1, 60% of peripheral blood mononuclear cells and 85% of cells in an affected lymph node were positive for CD21, CD79a, IgM, and MCH II, indicative of B-cells. With electron microscopy, disorganized and dilated endoplasmic reticulum was seen in Mott cells in tumors from both dogs. Antigen receptor gene rearrangement analysis of lymph node and intestinal masses indicated a clonal B-cell population. Based on cell morphology, tissue involvement, and evidence for clonal B-cell proliferation, we diagnosed neoplasms involving Mott cells. To the authors' knowledge, this is the second report of Mott cell tumors or, more appropriately, B-cell lymphoma with Mott cell differentiation, in dogs. More complete characterization of this neoplasm requires further investigation of additional cases. This lymphoproliferative disease should be considered as a differential diagnosis for canine gastrointestinal tumors.

  11. Conduction and rectification in NbO x - and NiO-based metal-insulator-metal diodes

    Energy Technology Data Exchange (ETDEWEB)

    Osgood, Richard M.; Giardini, Stephen; Carlson, Joel; Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan; Chin, Matthew; Nichols, Barbara; Dubey, Madan; Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy; Parilla, Philip; Berry, Joseph; Ginley, David

    2016-09-01

    Conduction and rectification in nanoantenna-coupled NbOx- and NiO-based metal-insulator-metal (MIM) diodes ('nanorectennas') are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current-voltage (I-V) curves, over 10 orders of magnitude in current density, from [NbOx(native)-Nb2O5]- and NiO-based samples with oxide thicknesses in the range of 5-36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I-V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I-V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I-V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I-V curves with our model, the barrier heights in Nb-(NbOx(native)-Nb2O5)-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbOx (native)-Nb2O5 dielectric properties improve, and the effective Pt-Nb2O5 barrier height increases as the oxide thickness increases. An observation of direct current of ~4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports. This measured direct current is compared to the prediction for rectified direct current

  12. High-pressure electron-resonance studies of electronic, magnetic, and structural phase transitions. Progress report

    International Nuclear Information System (INIS)

    Pifer, J.H.; Croft, M.C.

    1983-01-01

    Research is described in development of a high-pressure electron-resonance probe capable of operating down to 1.5 0 K temperatures. The apparatus has been used to measure the EPR of a sample of DPPH at room temperature and zero pressure. EPR has been used to measure valence field instabilities in alloy systems. Studies have been done on metal-insulator transitions at high pressure, and are briefly described

  13. Universal Fluctuations in Spectra of Disordered Systems at the Anderson Transition

    OpenAIRE

    Zharekeshev, Isa Kh.; Kramer, Bernhard

    1995-01-01

    Using the level--spacing distribution and the total probability function of the numbers of levels in a given energy interval we analyze the crossover of the level statistics between the delocalized and the localized regimes. By numerically calculating the electron spectra of systems of up to $32^3$ lattice sites described by the Anderson Hamiltonian it is shown that the distribution $P(s)$ of neighboring spacings is {\\em scale- independent} at the metal-insulator transition. For large spacing...

  14. Disentangled Cooperative Orderings in Artificial Rare-Earth Nickelates

    Science.gov (United States)

    Middey, S.; Meyers, D.; Kareev, M.; Cao, Yanwei; Liu, X.; Shafer, P.; Freeland, J. W.; Kim, J.-W.; Ryan, P. J.; Chakhalian, J.

    2018-04-01

    Coupled transitions between distinct ordered phases are important aspects behind the rich phase complexity of correlated oxides that hinder our understanding of the underlying phenomena. For this reason, fundamental control over complex transitions has become a leading motivation of the designer approach to materials. We have devised a series of new superlattices by combining a Mott insulator and a correlated metal to form ultrashort period superlattices, which allow one to disentangle the simultaneous orderings in RENiO3 . Tailoring an incommensurate heterostructure period relative to the bulk charge ordering pattern suppresses the charge order transition while preserving metal-insulator and antiferromagnetic transitions. Such selective decoupling of the entangled phases resolves the long-standing puzzle about the driving force behind the metal-insulator transition and points to the site-selective Mott transition as the operative mechanism. This designer approach emphasizes the potential of heterointerfaces for selective control of simultaneous transitions in complex materials with entwined broken symmetries.

  15. Electrostatic doping of a Mott insulator in an oxide heterostructure: the case of LaVO{sub 3}/SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Andreas; Pfaff, Florian; Sing, Michael; Claessen, Ralph [Physikalisches Insititut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany); Boschker, Hans; Kamp, Martin; Koster, Gertjan; Rijnders, Guus [Faculty of Science and Technology and MESA-plus Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2012-07-01

    The discovery of a quasi-two-dimensional electron system at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3} has triggered intense investigations of oxide heterostructures with other material combinations. The hope is that by combining a polar overlayer with a non-polar substrate electronic reconstruction will lead to highly mobile interface charge carriers with special properties. The formation of a conducting interface layer in epitaxial LaVO{sub 3}/SrTiO{sub 3}, where LaVO{sub 3} is a Mott insulator, is studied by transport measurements and hard X-ray photoelectron spectroscopy. We identify an insulator-to-metal transition above a critical LaVO{sub 3} thickness with transport properties similar to those recently reported for LaAlO{sub 3}/SrTiO{sub 3} interfaces. Interestingly, our photoemission measurements give evidence that electronic charge is transferred exclusively to the LaVO{sub 3}-side of the interface caused by an electronic reconstruction within the film itself. This opens the opportunity to study a band-filling controlled Mott transition induced by a purely electrostatic mechanism.

  16. Fingerprints of spin-orbital polarons and of their disorder in the photoemission spectra of doped Mott insulators with orbital degeneracy

    Science.gov (United States)

    Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

    2018-04-01

    We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the R1 -xCaxVO3 perovskites, where R = La, ⋯, Lu. A fundamental characteristic of these vanadium d2 compounds with partly filled t2 g valence orbitals is the persistence of spin and orbital order up to high doping, in contrast to the loss of magnetic order in high-Tc cuprates at low defect concentration. We study the disordered electronic structure of such doped Mott-Hubbard insulators within the unrestricted Hartree-Fock approximation and, as a result, manage to explain the spectral features that occur in photoemission and inverse photoemission. In particular, (i) the atomic multiplet excitations in the inverse photoemission spectra and the various defect-related states and satellites are qualitatively well reproduced, (ii) a robust Mott gap survives up to large doping, and (iii) we show that the defect states inside the Mott gap develop a soft gap at the Fermi energy. The soft defect-states gap, which separates the highest occupied from the lowest unoccupied states, can be characterized by a shape and a scale parameter extracted from a Weibull statistical sampling of the density of states near the chemical potential. These parameters provide a criterion and a comprehensive schematization for the insulator-metal transition in disordered systems. Our results provide clear indications that doped holes are bound to charged defects and form small spin-orbital polarons whose internal kinetic energy is responsible for the opening of the soft defect-states gap. We show that this kinetic gap survives disorder fluctuations of defects and is amplified by the long-range electron-electron interactions, whereas we observe a Coulomb singularity in the atomic limit. The small size of spin-orbital polarons is inferred by an analysis of the inverse participation ratio and by

  17. Quantum phase transitions of a disordered antiferromagnetic topological insulator

    Science.gov (United States)

    Baireuther, P.; Edge, J. M.; Fulga, I. C.; Beenakker, C. W. J.; Tworzydło, J.

    2014-01-01

    We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this so-called "statistical" topological phase.

  18. Travel funds for Stanford University to Host Mott MURI Annual Review and Oxide Workshop, August 6-8, 2013

    Science.gov (United States)

    2016-02-25

    Travel funds for Stanford University to host Mott MURI Annual Review and Oxide Workshop, August 6-8, 2013 In conjunction with a program review for...Number of Papers published in non peer-reviewed journals: Final Report: Travel funds for Stanford University to host Mott MURI Annual Review and Oxide

  19. Raman Scattering as a Probe of the Magnetic State of BEDT-TTF Based Mott Insulators

    Directory of Open Access Journals (Sweden)

    Nora Hassan

    2018-05-01

    Full Text Available Quasi-two-dimensional Mott insulators based on BEDT-TTF molecules have recently demonstrated a variety of exotic states, which originate from electron–electron correlations and geometrical frustration of the lattice. Among those states are a triangular S = 1/2 spin liquid and quantum dipole liquid. In this article, we show the power of Raman scattering technique to characterize magnetic and electronic excitations of these states. Our results demonstrate a distinction between a spectrum of magnetic excitations in a simple Mott insulator with antiferromagnetic interactions, and a spectrum of an insulator with an additional on-site charge degree of freedom.

  20. MUTIL, Asymmetry Factor of Mott Cross-Sections for Electron, Positron Scattering

    International Nuclear Information System (INIS)

    Idoeta, R.; Legarda, F.

    2002-01-01

    1 - Description of program or function: The asymmetry factor S of Mott's differential cross section for the scattering of electrons and positrons by point nuclei without screening is calculated for any energy, atomic number and angle of scattering. 2 - Method of solution: We have summed the conditionally convergent series, F and G, appearing in the asymmetry factor using two consecutive transformations: The one of Yennie, Ravenhall and Wilson and that of Euler till we have seven times six significant figures repeated in the factor S. 3 - Restrictions on the complexity of the problem: Those appearing in the use of Mott's cross section for unscreened point nuclei

  1. Metal-to-nonmetal transitions

    CERN Document Server

    Hensel, Friedrich; Holst, Bastian

    2010-01-01

    This book is devoted to nonmetal-to-metal transitions. The original ideas of Mott for such a transition in solids have been adapted to describe a broad variety of phenomena in condensed matter physics (solids, liquids, and fluids), in plasma and cluster physics, as well as in nuclear physics (nuclear matter and quark-gluon systems). The book gives a comprehensive overview of theoretical methods and experimental results of the current research on the Mott effect for this wide spectrum of topics. The fundamental problem is the transition from localized to delocalized states which describes the nonmetal-to-metal transition in these diverse systems. Based on the ideas of Mott, Hubbard, Anderson as well as Landau and Zeldovich, internationally respected scientists present the scientific challenges and highlight the enormous progress which has been achieved over the last years. The level of description is aimed to specialists in these fields as well as to young scientists who will get an overview for their own work...

  2. Extension of the Mott-Gurney Law for a Bilayer Gap

    Science.gov (United States)

    Dubinov, A. E.; Kitayev, I. N.

    2018-04-01

    Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott-Gurney law for a bilayer diode).

  3. Single-atom-resolved fluorescence imaging of an atomic Mott insulator

    DEFF Research Database (Denmark)

    Sherson, Jacob; Weitenberg, Christof; Andres, Manuel

    2010-01-01

    in situ images of a quantum fluid in which each underlying quantum particle is detected. Here we report fluorescence imaging of strongly interacting bosonic Mott insulators in an optical lattice with single-atom and single-site resolution. From our images, we fully reconstruct the atom distribution...

  4. Site-resolved imaging of a bosonic Mott insulator using ytterbium atoms

    Science.gov (United States)

    Miranda, Martin; Inoue, Ryotaro; Tambo, Naoki; Kozuma, Mikio

    2017-10-01

    We demonstrate site-resolved imaging of a strongly correlated quantum system without relying on laser cooling techniques during fluorescence imaging. We observe the formation of Mott shells in the insulating regime and realize thermometry in an atomic cloud. This work proves the feasibility of the noncooled approach and opens the door to extending the detection technology to new atomic species.

  5. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    Science.gov (United States)

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-12-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  6. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida

    2017-12-29

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  7. Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

    Directory of Open Access Journals (Sweden)

    M.-H. Liao

    2013-09-01

    Full Text Available In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10−9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm−3. The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10−4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm.

  8. Variational local moment approach: From Kondo effect to Mott transition in correlated electron systems

    International Nuclear Information System (INIS)

    Kauch, Anna; Byczuk, Krzysztof

    2012-01-01

    The variational local moment approach (VLMA) solution of the single impurity Anderson model is presented. It generalizes the local moment approach of Logan et al. by invoking the variational principle to determine the lengths of local moments and orbital occupancies. We show that VLMA is a comprehensive, conserving and thermodynamically consistent approximation and treats both Fermi and non-Fermi liquid regimes as well as local moment phases on equal footing. We tested VLMA on selected problems. We solved the single- and multi-orbital impurity Anderson model in various regions of parameters, where different types of Kondo effects occur. The application of VLMA as an impurity solver of the dynamical mean-field theory, used to solve the multi-orbital Hubbard model, is also addressed.

  9. Metal non-metal transitions in doped semiconductors

    International Nuclear Information System (INIS)

    Brezini, A.

    1989-12-01

    A disordered Hubbard model with diagonal disorder is used to examine the electron localization effects associated with both disorder and electron-electron interaction. Extensive results are reported on the ground state properties and compared with other theories. In particular two regimes are observed; when the electron-electron interaction U is greater than the disorder parameter and when is smaller. Furthermore the effect of including conduction-band minima into the calculation of metal-insulator transitions in doped Si and Ge is investigated with use of Berggren approach. Good agreement with experiments are found when both disorder and interactions are included. (author). 37 refs, 7 figs, 3 tabs

  10. Trap-size scaling in confined-particle systems at quantum transitions

    International Nuclear Information System (INIS)

    Campostrini, Massimo; Vicari, Ettore

    2010-01-01

    We develop a trap-size scaling theory for trapped particle systems at quantum transitions. As a theoretical laboratory, we consider a quantum XY chain in an external transverse field acting as a trap for the spinless fermions of its quadratic Hamiltonian representation. We discuss trap-size scaling at the Mott insulator to superfluid transition in the Bose-Hubbard model. We present exact and accurate numerical results for the XY chain and for the low-density Mott transition in the hard-core limit of the one-dimensional Bose-Hubbard model. Our results are relevant for systems of cold atomic gases in optical lattices.

  11. Emergent Chiral Spin State in the Mott Phase of a Bosonic Kane-Mele-Hubbard Model

    Science.gov (United States)

    Plekhanov, Kirill; Vasić, Ivana; Petrescu, Alexandru; Nirwan, Rajbir; Roux, Guillaume; Hofstetter, Walter; Le Hur, Karyn

    2018-04-01

    Recently, the frustrated X Y model for spins 1 /2 on the honeycomb lattice has attracted a lot of attention in relation with the possibility to realize a chiral spin liquid state. This model is relevant to the physics of some quantum magnets. Using the flexibility of ultracold atom setups, we propose an alternative way to realize this model through the Mott regime of the bosonic Kane-Mele-Hubbard model. The phase diagram of this model is derived using bosonic dynamical mean-field theory. Focusing on the Mott phase, we investigate its magnetic properties as a function of frustration. We do find an emergent chiral spin state in the intermediate frustration regime. Using exact diagonalization we study more closely the physics of the effective frustrated X Y model and the properties of the chiral spin state. This gapped phase displays a chiral order, breaking time-reversal and parity symmetry, but is not topologically ordered (the Chern number is zero).

  12. Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

    International Nuclear Information System (INIS)

    Kukushkin, V. A.

    2015-01-01

    The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime

  13. Real-space visualization of remnant Mott gap and magnon excitations.

    Science.gov (United States)

    Wang, Y; Jia, C J; Moritz, B; Devereaux, T P

    2014-04-18

    We demonstrate the ability to visualize real-space dynamics of charge gap and magnon excitations in the Mott phase of the single-band Hubbard model and the remnants of these excitations with hole or electron doping. At short times, the character of magnetic and charge excitations is maintained even for large doping away from the Mott and antiferromagnetic phases. Doping influences both the real-space patterns and long timescales of these excitations with a clear carrier asymmetry attributable to particle-hole symmetry breaking in the underlying model. Further, a rapidly oscillating charge-density-wave-like pattern weakens, but persists as a visible demonstration of a subleading instability at half-filling which remains upon doping. The results offer an approach to analyzing the behavior of systems where momentum space is either inaccessible or poorly defined.

  14. Mott-insulating phases and magnetism of fermions in a double-well optical lattice

    International Nuclear Information System (INIS)

    Wang, Xin; Zhou, Qi; Das Sarma, S.

    2011-01-01

    We theoretically investigate, using nonperturbative strong correlation techniques, Mott-insulating phases and magnetic ordering of two-component fermions in a two-dimensional double-well optical lattice. At filling of two fermions per site, there are two types of Mott insulators, one of which is characterized by spin-1 antiferromagnetism below the Neel temperature. The superexchange interaction in this system is induced by the interplay between the interband interaction and the spin degree of freedom. A great advantage of the double-well optical lattice is that the magnetic quantum phase diagram and the Neel temperature can be easily controlled by tuning the orbital energy splitting of the two-level system. Particularly, the Neel temperature can be one order of magnitude larger than that in standard optical lattices, facilitating the experimental search for magnetic ordering in optical lattice systems.

  15. Pressure-driven phase transitions in TiOCl and the family (Ca, Sr, Ba)Fe2As2

    International Nuclear Information System (INIS)

    Zhang YuZhong; Opahle, Ingo; Jeschke, Harald O; ValentI, Roser

    2010-01-01

    Motivated by recent experimental measurements on pressure-driven phase transitions in Mott insulators as well as the new iron pnictide superconductors, we show that first principles Car-Parrinello molecular dynamics calculations are a powerful method to describe the microscopic origin of such transitions. We present results for (i) the pressure-induced insulator to metal phase transition in the prototypical Mott insulator TiOCl as well as (ii) the pressure-induced structural and magnetic phase transitions in the family of correlated metals AFe 2 As 2 (A = Ca, Sr, Ba). Comparison of our predictions with existing experimental results yields very good agreement.

  16. Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

    Science.gov (United States)

    Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

    2018-05-01

    Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

  17. Dimensional crossover and cold-atom realization of gapless and semi-metallic Mott insulating phases

    Science.gov (United States)

    Orth, Peter P.; Scheurer, Mathias; Rachel, Stephan

    2014-03-01

    We propose a realistic cold-atom setup which allows for a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator phase by simply tuning the hopping between the layers. We further employ cluster slave-rotor mean-field theory to study the effect of additional Hubbard onsite interactions that give rise to various spin liquid-like phases such as gapless and semi-metallic Mott insulating states.

  18. Antiferromagnetism and d-wave superconductivity in (doped) Mott insulators: A wave function approach

    OpenAIRE

    Weng, Z. Y.; Zhou, Y.; Muthukumar, V. N.

    2003-01-01

    We propose a class of wave functions that provide a unified description of antiferromagnetism and d-wave superconductivity in (doped) Mott insulators. The wave function has a Jastrow form and prohibits double occupancies. In the absence of holes, the wave function describes antiferromagnetism accurately. Off diagonal long range order develops at finite doping and the superconducting order parameter has d-wave symmetry. We also show how nodal quasiparticles and neutral spin excitations can be ...

  19. Ginsburg-Landau equation around the superconductor-insulator transition

    International Nuclear Information System (INIS)

    Ng, T.K.

    1991-01-01

    Based on the scaling theory of localization, we construct a Ginsburg-Landau (GL) equation for superconductors in an arbitrary strength of disordered potential. Using this GL equation, we reexamine the criteria for the superconductor-insulator transition and find that the transition to a localized superconductor can happen on both sides of the (normal) metal-insulator transition, in contrast to a previous prediction by Ma and Lee [Phys. Rev. B 32, 5658 (1985)] that the transition can only be on the insulator side. Furthermore, by comparing our theory with a recent scaling theory of dirty bosons by Fisher et al. [Phys. Rev. Lett. 64, 587 (1990)], we conclude that nontrivial crossover behavior in transport properties may occur in the vicinity of the superconductor-insulator transition

  20. Localized-to-extended-states transition below the Fermi level

    Science.gov (United States)

    Tito, M. A.; Pusep, Yu. A.

    2018-05-01

    Time-resolved photoluminescence is employed to examine a transition from localized to extended electron states below the Fermi level in multiple narrow quantum well GaAs/AlGaAs heterostructures, where disorder was generated by interface roughness. Such a transition resembles the metal-insulator transition profoundly investigated by electric transport measurements. An important distinction distinguishes the localized-to-extended-states transition studied here: it takes place below the Fermi level in an electron system with a constant concentration, which implies unchanging Coulomb correlations. Moreover, for such a localized-to-extended-states transition the temperature is shown to be irrelevant. In the insulating regime the magnetic field was found to cause an additional momentum relaxation which considerably enhanced the recombination rate. Thus, we propose a method to explore the evolution of the localized electron states in a system with a fixed disorder and Coulomb interaction.

  1. Ellen N. La Motte: the making of a nurse, writer, and activist.

    Science.gov (United States)

    Williams, Lea M

    2015-01-01

    This article examines the early career of Ellen N. La Motte (1873-1961) to trace how her training at the Johns Hopkins Training School for Nurses and years spent as a tuberculosis nurse in Baltimore shaped her perception of tuberculosis prevention and women's suffrage. Although studies of tuberculosis have frequently alluded to her work, no sustained biocritical discussion of her development as a nurse and scholar exists. Between 1902, when she graduated from nursing school, and 1914, the start of the Great War, La Motte published a textbook and dozens of articles in journals devoted to nursing and social reform and delivered many speeches at local, regional, and national meetings. In addition, as her reputation as an expert in the field of tuberculosis nursing grew, her advocacy for the vote for women increased, and she used her writing and speaking skills on behalf of the suffrage cause. This article assesses how the skills La Motte acquired during these years helped mold her into a successful and respected nurse, writer, and activist.

  2. The happy marriage between electron-phonon superconductivity and Mott physics in Cs3C60: A first-principle phase diagram

    Science.gov (United States)

    Capone, Massimo; Nomura, Yusuke; Sakai, Shiro; Giovannetti, Gianluca; Arita, Ryotaro

    The phase diagram of doped fullerides like Cs3C60 as a function of the spacing between fullerene molecules is characterized by a first-order transition between a Mott insulator and an s-wave superconductor with a dome-shaped behavior of the critical temperature. By means of an ab-initio modeling of the bandstructure, the electron-phonon interaction and the interaction parameter and a Dynamical Mean-Field Theory solution, we reproduce the phase diagram and demonstrate that phonon superconductivity benefits from strong correlations confirming earlier model predictions. The role of correlations is manifest also in infrared measurements carried out by L. Baldassarre. The superconducting phase shares many similarities with ''exotic'' superconductors with electronic pairing, suggesting that the anomalies in the ''normal'' state, rather than the pairing glue, can be the real common element unifying a wide family of strongly correlated superconductors including cuprates and iron superconductors

  3. Anderson Transition of Cold Atoms with Synthetic Spin-Orbit Coupling in Two-Dimensional Speckle Potentials

    Science.gov (United States)

    Orso, Giuliano

    2017-03-01

    We investigate the metal-insulator transition occurring in two-dimensional (2D) systems of noninteracting atoms in the presence of artificial spin-orbit interactions and a spatially correlated disorder generated by laser speckles. Based on a high order discretization scheme, we calculate the precise position of the mobility edge and verify that the transition belongs to the symplectic universality class. We show that the mobility edge depends strongly on the mixing angle between Rashba and Dresselhaus spin-orbit couplings. For equal couplings a non-power-law divergence is found, signaling the crossing to the orthogonal class, where such a 2D transition is forbidden.

  4. Exciton ionization in multilayer transition-metal dichalcogenides

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm; Latini, Simone; Thygesen, Kristian Sommer

    2016-01-01

    Photodetectors and solar cells based on materials with strongly bound excitons rely crucially on field-assisted exciton ionization. We study the ionization process in multilayer transition-metal dichalcogenides (TMDs) within the Mott-Wannier model incorporating fully the pronounced anisotropy...

  5. Probing the spin-orbit Mott state in Sr3Ir2O7 by electron doping

    Science.gov (United States)

    Hogan, Thomas C.

    Iridium-based members of the Ruddlesden-Popper family of oxide compounds are characterized by a unique combination of energetically comparable effects: crystal-field splitting, spin-orbit coupling, and electron-electron interactions are all present, and the combine to produce a Jeff = 1/2 ground state. In the bilayer member of this series, Sr3Ir2O7, this state manifests as electrically insulating, with unpaired Ir4+ spins aligned along the long axis of the unit cell to produce a G-type antiferromagnet with an ordered moment of 0.36 uB. In this work, this Mott state is destabilized by electron doping via La3+ substitution on the Sr-site to produce (Sr1-x Lax)3Ir2O7. The introduction of carriers initially causes nano-scale phase-separated regions to develop before driving a global insulator-to-metal transition at x=0.04. Coinciding with this transition is the disappearance of evidence of magnetic order in the system in either bulk magnetization or magnetic scattering experiments. The doping also enhances a structural order parameter observed in the parent compound at forbidden reciprocal lattice vectors. A more complete structural solution is proposed to account for this previously unresolved distortion, and also offers an explanation as to the anomalous net ferromagnetism seen prior in bulk measurements. Finally, spin dynamics are probed via a resonant x-ray technique to reveal evidence of spin-dimer-like behavior dominated by inter-plane interactions. This result supports a bond-operator treatment of the interaction Hamiltonian, and also explains the doping dependence of high temperature magnetic susceptibility.

  6. Wide gap Chern Mott insulating phases achieved by design

    Science.gov (United States)

    Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

    2017-12-01

    Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

  7. Winding Up of the Wave-Function Phase by an Insulator-to-Superfluid Transition in a Ring of Coupled Bose-Einstein Condensates

    International Nuclear Information System (INIS)

    Dziarmaga, Jacek; Meisner, Jakub; Zurek, Wojciech H.

    2008-01-01

    We study phase transition from the Mott insulator to superfluid in a periodic optical lattice. Kibble-Zurek mechanism predicts buildup of winding number through random walk of BEC phases, with the step size scaling as a third root of transition rate. We confirm this and demonstrate that this scaling accounts for the net winding number after the transition

  8. A Mott polarimeter for the search of time reversal violation in the decay of free neutrons

    International Nuclear Information System (INIS)

    Ban, G.; Beck, M.; Bialek, A.; Bodek, K.; Gorel, P.; Kirch, K.; Kistryn, St.; Kozela, A.; Kuzniak, M.; Lindroth, A.; Naviliat-Cuncic, O.; Pulut, J.; Severijns, N.; Stephan, E.; Zejma, J.

    2006-01-01

    A new polarimeter for low-energy electrons has been built and tested. The device was developed for the measurement of the transverse polarization of beta particles emitted in the decay of polarized cold neutrons. The decay electrons are identified by multi-wire proportional chambers made of low-Z materials and are detected with plastic scintillator hodoscopes. The transverse polarization is analyzed by means of large angle Mott scattering on a thin Pb foil. We describe here the elements of the apparatus and present the results of test measurements which illustrate its performance

  9. A Mott polarimeter for the search of time reversal violation in the decay of free neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Ban, G. [Laboratoire de Physique Corpusculaire, Caen (France); Beck, M. [Catholic University, Leuven (Belgium); Bialek, A. [Institute of Physics, Polish Academy of Sciences, Cracow (Poland); Bodek, K. [Institute of Physics, Jagiellonian University, Cracow (Poland)]. E-mail: ufbodek@if.uj.edu.pl; Gorel, P. [Laboratoire de Physique Corpusculaire, Caen (France); Paul Scherrer Institute, Villigen (Switzerland); Kirch, K. [Paul Scherrer Institute, Villigen (Switzerland); Kistryn, St. [Institute of Physics, Jagiellonian University, Cracow (Poland); Kozela, A. [Institute of Physics, Polish Academy of Sciences, Cracow (Poland); Kuzniak, M. [Institute of Physics, Jagiellonian University, Cracow (Poland); Lindroth, A. [Catholic University, Leuven (Belgium); Naviliat-Cuncic, O. [Laboratoire de Physique Corpusculaire, Caen (France); Pulut, J. [Institute of Physics, Jagiellonian University, Cracow (Poland); Paul Scherrer Institute, Villigen (Switzerland); Catholic University, Leuven (Belgium); Severijns, N. [Catholic University, Leuven (Belgium); Stephan, E. [Institute of Physics, University of Silesia, Katowice (Poland); Zejma, J. [Institute of Physics, Jagiellonian University, Cracow (Poland)

    2006-09-15

    A new polarimeter for low-energy electrons has been built and tested. The device was developed for the measurement of the transverse polarization of beta particles emitted in the decay of polarized cold neutrons. The decay electrons are identified by multi-wire proportional chambers made of low-Z materials and are detected with plastic scintillator hodoscopes. The transverse polarization is analyzed by means of large angle Mott scattering on a thin Pb foil. We describe here the elements of the apparatus and present the results of test measurements which illustrate its performance.

  10. Review and calculation of Mott scattering cross section by unscreened point nuclei

    International Nuclear Information System (INIS)

    Idoeta, R.; Legarda, F.

    1992-01-01

    A new tabulation of the ratio of the ''exact'' Mott cross section for unscreened point nuclei to the classical Rutherford cross section for electrons and positions has been made. Because of the infinite slowly converging series appearing in this ratio we have made two series transformations. With this evaluation the ratio reached convergence within six significant figures after less than a hundred terms and very low computing time. So the ratios evaluated have less relative error than those in the literature and covers a greater range of energy and atomic number. (orig.)

  11. Kondo-Anderson transitions

    Science.gov (United States)

    Kettemann, S.; Mucciolo, E. R.; Varga, I.; Slevin, K.

    2012-03-01

    Dilute magnetic impurities in a disordered Fermi liquid are considered close to the Anderson metal-insulator transition (AMIT). Critical power-law correlations between electron wave functions at different energies in the vicinity of the AMIT result in the formation of pseudogaps of the local density of states. Magnetic impurities can remain unscreened at such sites. We determine the density of the resulting free magnetic moments in the zero-temperature limit. While it is finite on the insulating side of the AMIT, it vanishes at the AMIT, and decays with a power law as function of the distance to the AMIT. Since the fluctuating spins of these free magnetic moments break the time-reversal symmetry of the conduction electrons, we find a shift of the AMIT, and the appearance of a semimetal phase. The distribution function of the Kondo temperature TK is derived at the AMIT, in the metallic phase, and in the insulator phase. This allows us to find the quantum phase diagram in an external magnetic field B and at finite temperature T. We calculate the resulting magnetic susceptibility, the specific heat, and the spin relaxation rate as a function of temperature. We find a phase diagram with finite-temperature transitions among insulator, critical semimetal, and metal phases. These new types of phase transitions are caused by the interplay between Kondo screening and Anderson localization, with the latter being shifted by the appearance of the temperature-dependent spin-flip scattering rate. Accordingly, we name them Kondo-Anderson transitions.

  12. Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

    Science.gov (United States)

    Kubo, Toshiharu; Freedsman, Joseph J.; Iwata, Yasuhiro; Egawa, Takashi

    2014-04-01

    Al2O3 deposited by atomic layer deposition (ALD) was used as an insulator in metal-insulator-semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen precursors for the ALD process, water (H2O), ozone (O3), and both H2O and O3 were used. The chemical characteristics of the ALD-Al2O3 surfaces were investigated by x-ray photoelectron spectroscopy. After fabrication of MIS-diodes and MIS-high-electron-mobility transistors (MIS-HEMTs) with the ALD-Al2O3, their electrical properties were evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The threshold voltage of the C-V curves for MIS-diodes indicated that the fixed charge in the Al2O3 layer is decreased when using both H2O and O3 as the oxygen precursors. Furthermore, MIS-HEMTs with the H2O + O3-based Al2O3 showed good dc I-V characteristics without post-deposition annealing of the ALD-Al2O3, and the drain leakage current in the off-state region was suppressed by seven orders of magnitude.

  13. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  14. Role of entropy and structural parameters in the spin-state transition of LaCoO3

    Science.gov (United States)

    Chakrabarti, Bismayan; Birol, Turan; Haule, Kristjan

    2017-11-01

    The spin-state transition in LaCoO3 has eluded description for decades despite concerted theoretical and experimental effort. In this study, we approach this problem using fully charge self-consistent density functional theory + embedded dynamical mean field theory (DFT+DMFT). We show from first principles that LaCoO3 cannot be described by a single, pure spin state at any temperature. Instead, we observe a gradual change in the population of higher-spin multiplets with increasing temperature, with the high-spin multiplets being excited at the onset of the spin-state transition followed by the intermediate-spin multiplets being excited at the metal-insulator-transition temperature. We explicitly elucidate the critical role of lattice expansion and oxygen octahedral rotations in the spin-state transition. We also reproduce, from first principles, that the spin-state transition and the metal-insulator transition in LaCoO3 occur at different temperature scales. In addition, our results shed light on the importance of electronic entropy in driving the spin-state transition, which has so far been ignored in all first-principles studies of this material.

  15. Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals.

    Science.gov (United States)

    Nozoe, Soichiro; Kinoshita, Nobuaki; Matsuda, Masaki

    2016-04-01

    By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2 . 2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2 . 2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2 . 2CHCl3 can work as useful hole-injection and transport material in OLEDs.

  16. Dimensional crossover and cold-atom realization of topological Mott insulators

    Science.gov (United States)

    Scheurer, Mathias S.; Rachel, Stephan; Orth, Peter P.

    2015-02-01

    Interacting cold-atomic gases in optical lattices offer an experimental approach to outstanding problems of many body physics. One important example is the interplay of interaction and topology which promises to generate a variety of exotic phases such as the fractionalized Chern insulator or the topological Mott insulator. Both theoretically understanding these states of matter and finding suitable systems that host them have proven to be challenging problems. Here we propose a cold-atom setup where Hubbard on-site interactions give rise to spin liquid-like phases: weak and strong topological Mott insulators. They represent the celebrated paradigm of an interacting and topological quantum state with fractionalized spinon excitations that inherit the topology of the non-interacting system. Our proposal shall help to pave the way for a controlled experimental investigation of this exotic state of matter in optical lattices. Furthermore, it allows for the investigation of a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator by tuning the hopping between the layers.

  17. SU (N ) spin-wave theory: Application to spin-orbital Mott insulators

    Science.gov (United States)

    Dong, Zhao-Yang; Wang, Wei; Li, Jian-Xin

    2018-05-01

    We present the application of the SU (N ) spin-wave theory to spin-orbital Mott insulators whose ground states exhibit magnetic orders. When taking both spin and orbital degrees of freedom into account rather than projecting Hilbert space onto the Kramers doublet, which is the lowest spin-orbital locked energy levels, the SU (N ) spin-wave theory should take the place of the SU (2 ) one due to the inevitable spin-orbital multipole exchange interactions. To implement the application, we introduce an efficient general local mean-field method, which involves all local fluctuations, and develop the SU (N ) linear spin-wave theory. Our approach is tested firstly by calculating the multipolar spin-wave spectra of the SU (4 ) antiferromagnetic model. Then, we apply it to spin-orbital Mott insulators. It is revealed that the Hund's coupling would influence the effectiveness of the isospin-1 /2 picture when the spin-orbital coupling is not large enough. We further carry out the SU (N ) spin-wave calculations of two materials, α -RuCl3 and Sr2IrO4 , and find that the magnonic and spin-orbital excitations are consistent with experiments.

  18. Self-energy behavior away from the Fermi surface in doped Mott insulators.

    Science.gov (United States)

    Merino, J; Gunnarsson, O; Kotliar, G

    2016-02-03

    We analyze self-energies of electrons away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole doping, the magnitude of the self-energy for imaginary frequencies at the top of the band ([Formula: see text]) is enhanced with respect to the self-energy magnitude at the bottom of the band ([Formula: see text]). The self-energy behavior at these two [Formula: see text]-points is switched for electron doping. Although the hybridization is much larger for (0, 0) than for [Formula: see text], we demonstrate that this is not the origin of this difference. Isolated clusters under a downward shift of the chemical potential, [Formula: see text], at half-filling reproduce the overall self-energy behavior at (0, 0) and [Formula: see text] found in low hole doped embedded clusters. This happens although there is no change in the electronic structure of the isolated clusters. Our analysis shows that a downward shift of the chemical potential which weakly hole dopes the Mott insulator can lead to a large enhancement of the [Formula: see text] self-energy for imaginary frequencies which is not associated with electronic correlation effects, even in embedded clusters. Interpretations of the strength of electronic correlations based on self-energies for imaginary frequencies are, in general, misleading for states away from the Fermi surface.

  19. Angle Resolved Photoemission Spectroscopy Studies of the Mott Insulator to Superconductor Evolution in Ca2-xNaxCuO2Cl2

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Kyle Michael

    2005-09-02

    It is widely believed that many of the exotic physical properties of the high-T{sub c} cuprate superconductors arise from the proximity of these materials to the strongly correlated, antiferromagnetic Mott insulating state. Therefore, one of the fundamental questions in the field of high-temperature superconductivity is to understand the insulator-to-superconductor transition and precisely how the electronic structure of Mott insulator evolves as the first holes are doped into the system. This dissertation presents high-resolution, doping dependent angle-resolved photoemission (ARPES) studies of the cuprate superconductor Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}, spanning from the undoped parent Mott insulator to a high-temperature superconductor with a T{sub c} of 22 K. A phenomenological model is proposed to explain how the spectral lineshape, the quasiparticle band dispersion, and the chemical potential all progress with doping in a logical and self-consistent framework. This model is based on Franck-Condon broadening observed in polaronic systems where strong electron-boson interactions cause the quasiparticle residue, Z, to be vanishingly small. Comparisons of the low-lying states to different electronic states in the valence band strongly suggest that the coupling of the photohole to the lattice (i.e. lattice polaron formation) is the dominant broadening mechanism for the lower Hubbard band states. Combining this polaronic framework with high-resolution ARPES measurements finally provides a resolution to the long-standing controversy over the behavior of the chemical potential in the high-T{sub c} cuprates. This scenario arises from replacing the conventional Fermi liquid quasiparticle interpretation of the features in the Mott insulator by a Franck-Condon model, allowing the reassignment of the position of the quasiparticle pole. As a function of hole doping, the chemical potential shifts smoothly into the valence band while spectral weight is transferred

  20. Spin-State Transition in La1-xSrxCoO3 Single Crystals

    Science.gov (United States)

    Bhardwaj, S.; Prabhakaran, D.; Awasthi, A. M.

    2011-07-01

    We present a study of the thermal conductivity (κ), specific heat (Cp) and Raman spectra of La1-xSrxCoO3 (x = 0,0.1) single crystals. Both the specimens have low thermal conductivity and board Raman peaks, arising from strong scattering of phonons by lattice disorder, produced by (and doping-enhanced) spin-states admixture of the Co3+ ions. The thermal conductivity anomalously deviates from ˜1/T behaviour at high (room) temperatures, expected of an insulator. High-temperature specific heat reveals large decrease in the metal-insulator (M-I) transition temperature with Sr-doping.

  1. The effects of disorder and interactions on the Anderson transition in doped graphene

    International Nuclear Information System (INIS)

    Song Yun; Song Hongkang; Feng Shiping

    2011-01-01

    We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that the Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentials, the experimental findings of the scale enlargements of puddles can be explained by reviewing the effects of both interactions and disorder.

  2. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  3. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  4. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

    Science.gov (United States)

    Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

    2018-01-01

    We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

  5. Coherence and pairing in a doped Mott insulator: application to the cuprates.

    Science.gov (United States)

    Senthil, T; Lee, Patrick A

    2009-08-14

    The issues of single particle coherence and its interplay with singlet pairing are studied within the slave boson gauge theory of a doped Mott insulator. Prior work by one of us [T. Senthil, Phys. Rev. B 78, 045109 (2008)10.1103/PhysRevB.78.045109] showed that the coherence scale below which Landau quasiparticles emerge is parametrically lower than that identified in the slave boson mean field theory. Here we study the resulting new non-Fermi liquid intermediate temperature regime characterized by a single particle scattering rate that is linear in temperature (T). In the presence of a d-wave pair amplitude, this leads to a pseudogap state with T-dependent Fermi arcs near the nodal direction. Implications for understanding the cuprates are discussed.

  6. Two-magnon scattering in spin–orbital Mott insulator Ba2IrO4

    International Nuclear Information System (INIS)

    Tsuda, Shunsuke; Uji, Shinya; Okabe, Hirotaka; Isobe, Masaaki

    2016-01-01

    A spin–orbit induced Mott insulator Ba 2 IrO 4 with the pseudo-spin J eff = 1/2, showing an antiferromagnetic order (T N = 240 K), has been investigated by Raman spectroscopy. A broad peak with the B 1g symmetry is found in a wide temperature region up to 400 K, which is ascribed to the two-magnon scattering. From the peak position and width, the exchange coupling and the antiferromagnetic correlation length are estimated to be 590 cm −1 and 45 Å at 90 K, respectively. The results are compared with the antiferromagnet La 2 CuO 4 with the spin S = 1/2. We conclude that there is no significant difference in the short wavelength spin-excitation between the S = 1/2 and J eff = 1/2 systems. (author)

  7. Two-Magnon Scattering in Spin-Orbital Mott Insulator Ba2IrO4

    Science.gov (United States)

    Tsuda, Shunsuke; Okabe, Hirotaka; Isobe, Masaaki; Uji, Shinya

    2016-02-01

    A spin-orbit induced Mott insulator Ba2IrO4 with the pseudo-spin Jeff = 1/2, showing an antiferromagnetic order (TN = 240 K), has been investigated by Raman spectroscopy. A broad peak with the B1g symmetry is found in a wide temperature region up to 400 K, which is ascribed to the two-magnon scattering. From the peak position and width, the exchange coupling and the antiferromagnetic correlation length are estimated to be 590 cm-1 and 45 Å at 90 K, respectively. The results are compared with the antiferromagnet La2CuO4 with the spin S = 1/2. We conclude that there is no significant difference in the short wavelength spin-excitation between the S = 1/2 and Jeff = 1/2 systems.

  8. Two-magnon Raman scattering in a Mott-Hubbard antiferromagnet

    International Nuclear Information System (INIS)

    Basu, S.; Singh, A.

    1996-01-01

    A perturbation-theoretic diagrammatic scheme is developed for systematically studying the two-magnon Raman scattering in a Mott-Hubbard antiferromagnet. The fermionic structure of the magnon interaction vertex is obtained at order-1/N level in an inverse-degeneracy expansion, and the relevant two-magnon propagator is obtained by incorporating magnon interactions at a ladder-sum level. Evaluation of the magnon interaction vertex in the large-U limit yields a nearest-neighbor instantaneous interaction with interaction energy -J. Application of this approach to the intermediate-U regime, which is of relevance for cuprate antiferromagnets, is also discussed. Incorporating the zero-temperature magnon damping, which is estimated in terms of quantum spin fluctuations, the two-magnon Raman scattering intensity is evaluated and compared with experiments on La 2 CuO 4 . copyright 1996 The American Physical Society

  9. Effects of the electron's anomaly in relativistic laser-assisted Mott scattering

    International Nuclear Information System (INIS)

    Ngoko Djiokap, J.M.; Tetchou Nganso, H.M.; Kwato Njock, M.G.

    2006-02-01

    We investigate the influence of the electron's anomalous magnetic moment on the process of relativistic Mott scattering in a powerful electromagnetic plane wave for which the ponderomotive energy is of the order of the magnitude of the electron's rest mass. For this purpose, we use the Coulomb-Dirac-Volkov and the Dirac-Volkov functions with the electron's anomaly to describe the initial and final states respectively. First-order Born differential cross sections of induced and inverse bremsstrahlung are obtained for linearly polarized laser light. Numerical calculations are carried out for various parameters values (i.e. scattering angle, the nucleus charge, photon energy, electrical field) and are compared with results obtained by Li et al. It is found that for parameters used in the present work, incorporating the anomaly of the electron in the initial and final states yields cross sections which are strongly modified whatever the scattering geometry, as compared to the outcome of the previous treatment. (author)

  10. Photoinduced Coherent Spin Fluctuation in Primary Dynamics of Insulator to Metal Transition in Perovskite Cobalt Oxide

    Directory of Open Access Journals (Sweden)

    Arima T.

    2013-03-01

    Full Text Available Coherent spin fluctuation was detected in the photoinduced Mott insulator-metal transition in perovskite cobalt oxide by using 3 optical-cycle infrared pulse. Such coherent spin fluctuation is driven by the perovskite distortion changing orbital gap.

  11. Study of transition metal oxides by photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Rao, C.N.R.; Sarma, D.D.; Vasudevan, S.; Hegde, M.S.

    1979-01-01

    Systematics in the X-ray photoelectron spectra (X.p.e.s.) of Ti, V, Cr, Mn and Nb oxides with the metal ion in different oxidation states as well as of related series of mono-, sesqui- and di-oxides of the first row of transition metals have been investigated in detail. Core level binding energies, spin-orbit splittings and exchange splittings are found to exhibit interesting variations with the oxidation state of the metal or the nuclear charge. The 3d binding energies of the monoxides show a proportionality to Goodenough's (R - RC). Other aspects of interest in the study are the satellite structure and final state effects in the X.p.e.s. of the oxides, and identification of different valence states in oxides of the general formulae Mn02n-1 and M304. The nature of changes in the 3d bands of oxides undergoing metal-insulator transitions is also indicated. (author)

  12. Polymorphous band structure model of gapping in the antiferromagnetic and paramagnetic phases of the Mott insulators MnO, FeO, CoO, and NiO

    Science.gov (United States)

    Trimarchi, Giancarlo; Wang, Zhi; Zunger, Alex

    2018-01-01

    The existence of band gaps in both the antiferromagnetic (AFM) and paramagnetic (PM) phases of the classic NaCl-structure Mott insulators MnO, FeO, CoO, and NiO is traditionally viewed and taught as a manifestation of strong correlation whereby insulation results from electrons moving across the lattice forming states with doubly occupied d orbitals on certain atomic sites and empty d orbitals on other sites. Within such theories, the gap of the AFM and PM phases of these oxides emerges even in the absence of spatial symmetry breaking. The need for such a correlated picture is partially based on the known failure of the commonly used band models for the PM phase that assume for such a spin disordered state the macroscopically averaged NaCl structure, where all transition metal (TM) sites are symmetry-equivalent (a monomorphous description), producing a gapless PM state with zero magnetic moments, in sharp conflict with experiment. Here, we seek to understand the minimum theoretical description needed to capture the leading descriptors of ground state Mott insulation in the classic, 3 d monoxide Mott systems—gapping and moment formation in the AFM and PM phase. As noted by previous authors, the spin-ordered AFM phase in these materials already shows in band theory a significant band gap when one doubles the NaCl unit cell by permitting different potentials for transition-metal atoms with different spins. For the spin-disordered PM phase, we allow analogously larger NaCl-type supercells where each TM site can have different spin direction and local bonding environments (i.e., disordered), yet the total spin is zero. Such a polymorphous description has the flexibility to acquire symmetry-breaking energy-lowering patterns that can lift the degeneracy of the d orbitals and develop large on-site magnetic moments without violating the global, averaged NaCl symmetry. Electrons are exchanged between spin-up and spin-down bands to create closed-shell insulating

  13. Disorder-induced localization in crystalline phase-change materials.

    Science.gov (United States)

    Siegrist, T; Jost, P; Volker, H; Woda, M; Merkelbach, P; Schlockermann, C; Wuttig, M

    2011-03-01

    Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.

  14. Mott-insulating phases in unidimensional multi-components fermionic cold atoms

    International Nuclear Information System (INIS)

    Nonne, Heloise

    2011-01-01

    This thesis is devoted to the investigation of the Mott insulating phases arising in one-dimensional multicomponent fermionic cold atoms systems. The first part of this work is the study of a model with alkaline-earth cold atoms with nuclear spin I = 1/2. Those atoms enjoy an additional orbital degree of freedom, due to the presence of a metastable excited state; they thus have a total of four components. Our investigation is carried at half-filling, at strong and at weak couplings by means of analytic methods (conformal theory, bosonization, refermionization, renormalisation group). We found that the zero temperature phase diagram of the system is very rich: it contains seven Mott insulating phases, among which three are particularly interesting, since they display a hidden order, related to the Haldane physics of the antiferromagnetic spin-1 Heisenberg chain. Our conclusions are checked against numerical simulations, that were carried out with the density matrix renormalization group (DMRG) algorithm for intermediate couplings. The comparison shows an adiabatic continuity between the different regimes. A similar study for a model of cold atoms with hyperfine spin-3/2 highlights the Haldane physics in the charge sector of the degrees of freedom, with an effective model given by an antiferromagnetic pseudo-spin-1 chain. This analysis provides us an opportunity to investigate the zero temperature properties of the SO(5) bilinear-bi-quadratic Heisenberg chain. We show the presence of two gapped phases: one is dimerized, the other has a hidden symmetry (Z 2 x Z 2 ) 2 and spin-3/2 edge states, and they are separated by a critical point that belongs to the SO(5) 1 universality class. Finally, we investigate half-integer hyperfine spin cold atoms systems with 2N components which generalized the results obtained for the hyperfine spin-3/2 model. This leads us to find an even/odd effect according to the parity of N, very similar to the even/odd effect of spin chains

  15. Pertinence et limitations de la loi de Mott dans les isolants désordonnés

    Science.gov (United States)

    Ladieu, François; Sanquer, Marc

    Twenty five years ago, Mott's law was established in order to describe electrical transport in disordered insulators at low temperature. In this review, we briefly summarize the different theoretical steps involved in the rigourous derivation of Mott's law. We stress upon the fact that Mott's law gives the mean conductance of an ensemble of macroscopic samples as long as electron-electron interactions remain negligible. We then study what happens when at least one of the key assumptions of Mott's law no longer holds. We first focus on systems whose size — at least in one dimension — is not macroscopic: the optimization involved in Mott's law is no longer relevant for the measured conductance. Eventually, we try to gather different works dealing with electron-electron interactions. It is now established that interactions generally produce a stronger divergence for the electrical resistance than the one predicted by Mott's law at the lowest temperatures. But the exact shape of this divergence, as well as its interpretation, remain debated. We try to make a link between Efros and Shklovskii 's work and their famous "Coulomb gap" and a more recent work about granular media. In this latter work, the size of the grains is the key parameter for the shape of the divergence of the resistance at low temperature. We suggest this could indicate a way for a model accounting for the different shapes of divergence of the electrical resistance at the lowest temperatures. Furthermore this framework of granular media allows us to deal with non linear regime: we explain the main differences between the predictions of the hot electrons model and the ones recently derived for a d -dimensional network of grains. Il y a déjà un quart de siècle que la loi de Mott a été établie afin de décrire le transport dans les milieux isolants désordonnés à basse température. Dans cet article de revue, nous rappelons brièvement les diverses étapes théoriques nécessaires à l

  16. 3D Spin-Liquid State in an Organic Hyperkagome Lattice of Mott Dimers

    Science.gov (United States)

    Mizuno, Asato; Shuku, Yoshiaki; Matsushita, Michio M.; Tsuchiizu, Masahisa; Hara, Yuuki; Wada, Nobuo; Shimizu, Yasuhiro; Awaga, Kunio

    2017-08-01

    We report the first 3D spin liquid state of isotropic organic spins. Structural analysis, and magnetic and heat-capacity measurements were carried out for a chiral organic radical salt, (TBA) 1.5[(-)-NDI -Δ ] (TBA denotes tetrabutylammonium and NDI denotes naphthalene diimide), in which (-)-NDI -Δ forms a K4 structure due to its triangular molecular structure and an intermolecular π -π overlap between the NDI moieties. This lattice was identical to the hyperkagome lattice of S =1 /2 Mott dimers, and should exhibit 3D spin frustration. In fact, even though the high-temperature magnetic susceptibility followed the Curie-Weiss law with a negative Weiss constant of θ =-15 K , the low-temperature magnetic measurements revealed no long-range magnetic ordering down to 70 mK, and suggested the presence of a spin liquid state with a large residual paramagnetism χ0 of 8.5 ×10-6 emu g-1 at the absolute zero temperature. This was supported by the N 14 NMR measurements down to 0.38 K. Further, the low-temperature heat capacities cp down to 68 mK clearly indicated the presence of cp for the spin liquid state, which can be fitted to the power law of T0.62 in the wide temperature range 0.07-4.5 K.

  17. Impurity band Mott insulators: a new route to high Tc superconductivity

    Directory of Open Access Journals (Sweden)

    Ganapathy Baskaran

    2008-01-01

    Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

  18. Quasi-one-dimensional Hall physics in the Harper–Hofstadter–Mott model

    Science.gov (United States)

    Kozarski, Filip; Hügel, Dario; Pollet, Lode

    2018-04-01

    We study the ground-state phase diagram of the strongly interacting Harper–Hofstadter–Mott model at quarter flux on a quasi-one-dimensional lattice consisting of a single magnetic flux quantum in y-direction. In addition to superfluid phases with various density patterns, the ground-state phase diagram features quasi-one-dimensional analogs of fractional quantum Hall phases at fillings ν = 1/2 and 3/2, where the latter is only found thanks to the hopping anisotropy and the quasi-one-dimensional geometry. At integer fillings—where in the full two-dimensional system the ground-state is expected to be gapless—we observe gapped non-degenerate ground-states: at ν = 1 it shows an odd ‘fermionic’ Hall conductance, while the Hall response at ν = 2 consists of the transverse transport of a single particle–hole pair, resulting in a net zero Hall conductance. The results are obtained by exact diagonalization and in the reciprocal mean-field approximation.

  19. Dynamical cluster approximation plus semiclassical approximation study for a Mott insulator and d-wave pairing

    Science.gov (United States)

    Kim, SungKun; Lee, Hunpyo

    2017-06-01

    Via a dynamical cluster approximation with N c = 4 in combination with a semiclassical approximation (DCA+SCA), we study the doped two-dimensional Hubbard model. We obtain a plaquette antiferromagnetic (AF) Mott insulator, a plaquette AF ordered metal, a pseudogap (or d-wave superconductor) and a paramagnetic metal by tuning the doping concentration. These features are similar to the behaviors observed in copper-oxide superconductors and are in qualitative agreement with the results calculated by the cluster dynamical mean field theory with the continuous-time quantum Monte Carlo (CDMFT+CTQMC) approach. The results of our DCA+SCA differ from those of the CDMFT+CTQMC approach in that the d-wave superconducting order parameters are shown even in the high doped region, unlike the results of the CDMFT+CTQMC approach. We think that the strong plaquette AF orderings in the dynamical cluster approximation (DCA) with N c = 4 suppress superconducting states with increasing doping up to strongly doped region, because frozen dynamical fluctuations in a semiclassical approximation (SCA) approach are unable to destroy those orderings. Our calculation with short-range spatial fluctuations is initial research, because the SCA can manage long-range spatial fluctuations in feasible computational times beyond the CDMFT+CTQMC tool. We believe that our future DCA+SCA calculations should supply information on the fully momentum-resolved physical properties, which could be compared with the results measured by angle-resolved photoemission spectroscopy experiments.

  20. A pure Hubbard model with demonstrable pairing adjacent to the Mott-insulating phase

    International Nuclear Information System (INIS)

    Champion, J D; Long, M W

    2003-01-01

    We introduce a Hubbard model on a particular class of geometries, and consider the effect of doping the highly spin-degenerate Mott-insulating state with a microscopic number of holes in the extreme strong-coupling limit. The geometry is quite general, with pairs of atomic sites at each superlattice vertex, and a highly frustrated inter-atomic connectivity: the one-dimensional realization is a chain of edge-sharing tetrahedra. The sole model parameter is the ratio of intra-pair to inter-pair hopping matrix elements. If the intra-pair hopping is negligible then introducing a microscopic number of holes results in a ferromagnetic Nagaoka groundstate. Conversely, if the intra-pair hopping is comparable with the inter-pair hopping then the groundstate is low spin with short-ranged spin correlations. We exactly solve the correlated motion of a pair of holes in such a state and find that, in 1d and 2d, they form a bound pair on a length scale that increases with diminishing binding energy. This result is pertinent to the long-standing problem of hole motion in the CuO 2 planes of the high-temperature superconductors: we have rigorously shown that, on our frustrated geometry, the holes pair up and a short-ranged low-spin state is generated by hole motion alone

  1. Surface charge sensing by altering the phase transition in VO2

    Science.gov (United States)

    Kumar, S.; Esfandyarpour, R.; Davis, R.; Nishi, Y.

    2014-08-01

    Detection of surface charges has various applications in medicine, electronics, biotechnology, etc. The source of surface charge induction may range from simple charge-polarized molecules like water to complicated proteins. It was recently discovered that surface charge accumulation can alter the temperature at which VO2 undergoes a Mott transition. Here, we deposited polar molecules onto the surface of two-terminal thin-film VO2 lateral devices and monitored the joule-heating-driven Mott transition, or conductance switching. We observed that the power required to induce the conductance switching reduced upon treatment with polar molecules and, using in-situ blackbody-emission direct measurement of local temperature, we show that this reduction in power was accompanied by reduction in the Mott transition temperature. Further evidence suggested that this effect has specificity to the nature of the species used to induce surface charges. Using x-ray absorption spectroscopy, we also show that there is no detectable change in oxidation state of vanadium or structural phase in the bulk of the 40 nm VO2 thin-film even as the phase transition temperature is reduced by up to 20 K by the polar molecules. The ability to alter the phase transition parameters by depositing polar molecules suggests a potential application in sensing surface charges of different origins and this set of results also highlights interesting aspects of the phase transition in VO2.

  2. Resistive transition in disordered superconductors with varying intergrain coupling

    International Nuclear Information System (INIS)

    Ponta, L; Carbone, A; Gilli, M

    2011-01-01

    The effect of disorder is investigated in granular superconductive materials with strong- and weak-links. The transition is controlled by the interplay of the tunneling g and intragrain g intr conductances, which depend on the strength of the intergrain coupling. For g intr , the transition first involves the grain boundary, while for g ∼ g intr the transition occurs into the whole grain. The different intergrain couplings are considered by modeling the superconducting material as a disordered network of Josephson junctions. Numerical simulations show that on increasing the disorder, the resistive transition occurs for lower temperatures and the curve broadens. These features are enhanced in disordered superconductors with strong-links. The different behavior is further checked by estimating the average network resistance for weak- and strong-links in the framework of the effective medium approximation theory. These results may shed light on long standing puzzles such as: (i) enhancement of the superconducting transition temperature of many metals in the granular states; (ii) suppression of superconductivity in homogeneously disordered films compared to standard granular systems close to the metal-insulator transition; (iii) enhanced degradation of superconductivity by doping and impurities in strongly linked materials, such as magnesium diboride, compared to weakly linked superconductors, such as cuprates.

  3. Temperature dependence of hole mobility in Mott insulators: Normal-state resistivity of high-T/sub c/ superconductors

    International Nuclear Information System (INIS)

    Kumar, N.

    1989-01-01

    We consider the diffusion of a hole injected in a Mott insulator described by a one-band Hubbard Hamiltonian at half-filling and in the atomic limit. The diffusion coefficient turns out to be temperature independent exactly giving 1/T dependence for the drift mobility via the Einstein relation. This is in marked disagreement with the (1/T)/sup 1/2/ dependence obtaining in the self-retracing path approximation at low temperatures. We note the possible relevance of our result to the linear T dependence of the normal-state resistivity observed in the high-T/sub c/ oxide superconductors

  4. Evaluation of the density of the charge trapped in organic ferroelectric capacitors based on the Mott-Schottky model

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Won-Ho [Samsung Display Co. Ltd., Yongin (Korea, Republic of); Kwon, Jin-Hyuk; Park, Gyeong-Tae; Kim, Jae-Hyun; Bae, Jin-Hyuk [Kyungpook National University, Daegu (Korea, Republic of); Zhang, Xue; Park, Jae-Hoon [Hallym University, Chuncheon (Korea, Republic of)

    2014-09-15

    Organic ferroelectric capacitors were fabricated using pentacene and poly (vinylidene fluoride trifluoroethylene) (PVDF-TrFE) as an organic semiconductor and a ferroelectric material, respectively. A paraelectric poly(vinyl cinnamate) layer was adopted as an interlayer between the PVDFTrFE layer and the bottom electrode. The paraelectric interlayer induced a depolarization field opposite to the direction of the polarization formed in the ferroelectric PVDF-TrFE insulator, thereby suppressing spontaneous polarization. As a result, the Mott-Schottky model could be used to evaluate, from the extracted flat-band voltages, the density of the charge trapped in the organic ferroelectric capacitors.

  5. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  6. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    International Nuclear Information System (INIS)

    Teubert, Joerg

    2008-01-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  7. Existence of Mott-Schwinger interaction proved by means of p-/sup 12/C elastic scattering. [450 to 600 keV

    Energy Technology Data Exchange (ETDEWEB)

    Krause, H H; Arnold, W; Berg, H; Ulbricht, J; Clausnitzer, G [Giessen Univ. (Germany, F.R.). Inst. fuer Kernphysik

    1979-01-01

    The aim of this work was the unambiguous proof of the existence of the Mott-Schwinger interaction. The analyzing power of the p-/sup 12/C elastic scattering was measured in the energy range from 450 to 600 keV for scattering angles theta/sub Lab/ = 90/sup 0/ and 120/sup 0/ with an overall accuracy up to ..delta..A = 1 x /sup -4/. The data can be described very well with the R-matrix formalism including Mott-Schwinger interaction. Omitting this interaction results in large discrepancies.

  8. Impact ionization processes in the steady state of a driven Mott-insulating layer coupled to metallic leads

    Science.gov (United States)

    Sorantin, Max E.; Dorda, Antonius; Held, Karsten; Arrigoni, Enrico

    2018-03-01

    We study a simple model of photovoltaic energy harvesting across a Mott-insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. We address, in particular, the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet dynamical mean-field theory treatment of the steady state with the so-called auxiliary master equation approach as impurity solver. We verify that an additional approximation, taking the self-energy diagonal in the Floquet indices, is appropriate for the parameter range we are considering.

  9. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    International Nuclear Information System (INIS)

    Richard T. Scalettar; Warren E. Pickett

    2005-01-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals

  10. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Scalettar, Richard T.; Pickett, Warren E.

    2004-07-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals.

  11. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Richard T. Scalettar; Warren E. Pickett

    2005-08-02

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

  12. Quantum critical phase and Lifshitz transition in an extended periodic Anderson model

    International Nuclear Information System (INIS)

    Laad, M S; Koley, S; Taraphder, A

    2012-01-01

    We study the quantum phase transition in f-electron systems as a quantum Lifshitz transition driven by selective-Mott localization in a realistic extended Anderson lattice model. Using dynamical mean-field theory (DMFT), we find that a quantum critical phase with anomalous ω/T scaling separates a heavy Landau-Fermi liquid from ordered phase(s). This non-Fermi liquid state arises from a lattice orthogonality catastrophe originating from orbital-selective Mott localization. Fermi surface reconstruction occurs via the interplay between and penetration of the Green function zeros to the poles, leading to violation of Luttinger’s theorem in the strange metal. We show how this naturally leads to scale-invariant responses in transport. Thus, our work represents a specific DMFT realization of the hidden-FL and FL* theories, and holds promise for the study of ‘strange’ metal phases in quantum matter. (fast track communication)

  13. Critical Phenomena of the Disorder Driven Localization-Delocalization Transition

    International Nuclear Information System (INIS)

    Marc Ruehlaender

    2001-01-01

    Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T c superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given

  14. Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films

    Science.gov (United States)

    Röhr, Jason A.; Moia, Davide; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

    2018-03-01

    Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

  15. Mott state and quantum critical points in rare-earth oxypnictides RO1-xFxFeAS (R= La, Sm, Nd, Pr, Ce)

    NARCIS (Netherlands)

    Giovannetti, G.; Kumar, S.; van den Brink, J.

    2008-01-01

    We investigate the magnetic phase diagram of the newly discovered iron-based high temperature oxypnictide superconductors of the type RO1-xFxFeAs, with rare earths R=La, Sm, Nd, Pr and Ce by means of ab initio SGGA and SGGA+U density functional computations. We find undoped LaOFeAs to be a Mott

  16. Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films.

    Science.gov (United States)

    Röhr, Jason A; Moia, Davide; Haque, Saif A; Kirchartz, Thomas; Nelson, Jenny

    2018-03-14

    Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

  17. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-01-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance

  18. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations

    International Nuclear Information System (INIS)

    Pagnon, V.

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that's incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity [fr

  19. Magnetic field dependence of conductivity and effective mass of carriers in a model of Mott-Hubbard material

    Directory of Open Access Journals (Sweden)

    L.Didukh

    2005-01-01

    Full Text Available The effect of external magnetic field h on a static conductivity of Mott-Hubbard material which is described by the model with correlated hopping of electrons has been investigated. By means of canonical transformation, the effective Hamiltonian is obtained which takes into account strong intra-site Coulomb repulsion and correlated hopping. Using a variant of generalized Hartree-Fock approximation the single-electron Green function and quasiparticle energy spectrum of the model have been calculated. The static conductivity σ has been calculated as a function of h, electron concentration n and temperature T. The correlated hopping is shown to cause the electron-hole asymmetry of transport properties of narrow band materials.

  20. Propagation of quantum correlations after a quench in the Mott-insulator regime of the Bose-Hubbard model

    International Nuclear Information System (INIS)

    Krutitsky, Konstantin V.; Navez, Patrick; Schuetzhold, Ralf; Queisser, Friedemann

    2014-01-01

    We study a quantum quench in the Bose-Hubbard model where the tunneling rate J is suddenly switched from zero to a finite value in the Mott regime. In order to solve the many-body quantum dynamics far from equilibrium, we consider the reduced density matrices for a finite number of lattice sites and split them up into on-site density operators, i.e., the mean field, plus two-point and three-point correlations etc. Neglecting three-point and higher correlations, we are able to numerically simulate the time-evolution of the on-site density matrices and the two-point quantum correlations (e.g., their effective light-cone structure) for a comparably large number of lattice sites. (orig.)

  1. Effects of inhomogeneity on the spectrum of the Mott-insulator state

    International Nuclear Information System (INIS)

    Pupillo, G.; Tiesinga, E.; Williams, C.J.

    2003-01-01

    We investigate the existence of quantum quasi-phase-transitions for an ensemble of ultracold bosons in a one-dimensional optical lattice performing exact diagonalizations of the Bose-Hubbard Hamiltonian. When an external parabolic potential is added to the system quasi-phase-transitions are induced by the competition of on-site mean-field energy, hopping energy, and energy offset among lattice sites due to the external potential and lead to the coexistence of regions of particle localization and delocalization in the lattice. We clarify the microscopic mechanisms responsible for these quasi-phase-transitions as a function of the depth of the external potential when the on-site mean-field energy is large compared to the hopping energy. In particular, we show that a model Hamiltonian involving a few Fock states can describe the behavior of energy gap, mean particle numbers per site, and number fluctuations per site almost quantitatively. The role of symmetry on the gap as a function of the depth of the external trapping potential is elucidated. We discuss possible experimental signatures of quasi-phase-transitions studying the single-particle density matrix and explain microscopically the occurrence of local maxima in the momentum distribution. The role of a thermal population of the excited states on the momentum distribution is discussed

  2. Cryogenic microwave imaging of metal–insulator transition in doped silicon

    KAUST Repository

    Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

    2011-01-01

    We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.

  3. Correlation between the nucleation of a Griffiths-like Phase and Colossal Magnetoresistance across the compositional metal-insulator boundary in La1-xCaxMnO3

    International Nuclear Information System (INIS)

    Jiang Wanjun; Zhou Xuezhi; Williams, Gwyn; Privezentsev, R; Mukovskii, Y

    2010-01-01

    Detailed measurements of the magnetic and transport properties of single crystals La 1-x Ca x MnO 3 (0.18 ≤ x ≤ 0.27) are summarized; comparisons between which (i) not only confirm that Griffiths Phase-like(GP) features are not a prerequisite for CMR, but also demonstrate that the presence of GP-like characteristics do not guarantee the appearance of CMR; (ii) indicate that whereas continuous magnetic transitions occur for 0.18 ≤ x ≤ 0.25, the universality class of these transitions belongs to that of nearest-neighbour 3D Heisenberg model only for x ≤ 0.20, beyond which complications due to GP-like behaviour occur.

  4. Physical properties of the half-filled Hubbard model in infinite dimensions

    International Nuclear Information System (INIS)

    Georges, A.; Krauth, W.

    1993-01-01

    A detailed quantitative study of the physical properties of the infinite-dimensional Hubbard model at half filling is presented. The method makes use of an exact mapping onto a single-impurity model supplemented by a self-consistency condition. This coupled problem is solved numerically. Results for thermodynamic quantities (specific heat, entropy, . . .), one-particle spectral properties, and magnetic properties (response to a uniform magnetic field) are presented and discussed. The nature of the Mott-Hubbard metal-insulator transition found in this model is investigated. A numerical solution of the mean-field equations inside the antiferromagnetic phase is also reported

  5. For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-10-01

    Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

  6. Boson localization and the superfluid-insulator transition

    International Nuclear Information System (INIS)

    Fisher, M.P.A.; Weichman, P.B.; Grinstein, G.; Fisher, D.S.; Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598; Joseph Henry Laboratory of Physics, Jadwin Hall, Princeton University, Princeton, New Jersey 08544)

    1989-01-01

    The phase diagrams and phase transitions of bosons with short-ranged repulsive interactions moving in periodic and/or random external potentials at zero temperature are investigated with emphasis on the superfluid-insulator transition induced by varying a parameter such as the density. Bosons in periodic potentials (e.g., on a lattice) at T=0 exhibit two types of phases: a superfluid phase and Mott insulating phases characterized by integer (or commensurate) boson densities, by the existence of a gap for particle-hole excitations, and by zero compressibility. Generically, the superfluid onset transition in d dimensions from a Mott insulator to superfluidity is ''ideal,'' or mean field in character, but at special multicritical points with particle-hole symmetry it is in the universality class of the (d+1)-dimensional XY model. In the presence of disorder, a third, ''Bose glass'' phase exists. This phase is insulating because of the localization effects of the randomness and analogous to the Fermi glass phase of interacting fermions in a strongly disordered potential

  7. Memory effects, two color percolation, and the temperature dependence of Mott variable-range hopping

    Science.gov (United States)

    Agam, Oded; Aleiner, Igor L.

    2014-06-01

    There are three basic processes that determine hopping transport: (a) hopping between normally empty sites (i.e., having exponentially small occupation numbers at equilibrium), (b) hopping between normally occupied sites, and (c) transitions between normally occupied and unoccupied sites. In conventional theories all these processes are considered Markovian and the correlations of occupation numbers of different sites are believed to be small (i.e., not exponential in temperature). We show that, contrary to this belief, memory effects suppress the processes of type (c) and manifest themselves in a subleading exponential temperature dependence of the variable-range hopping conductivity. This temperature dependence originates from the property that sites of type (a) and (b) form two independent resistor networks that are weakly coupled to each other by processes of type (c). This leads to a two-color percolation problem which we solve in the critical region.

  8. Orthorhombic fulleride (CH3NH2)K3C60 close to Mott-Hubbard instability: Ab initio study

    Science.gov (United States)

    Potočnik, Anton; Manini, Nicola; Komelj, Matej; Tosatti, Erio; Arčon, Denis

    2012-08-01

    We study the electronic structure and magnetic interactions in methylamine-intercalated orthorhombic alkali-doped fullerene (CH3NH2)K3C60 within the density functional theory. As in the simpler ammonia intercalated compound (NH3)K3C60, the orthorhombic crystal-field anisotropy Δ lifts the t1u triple degeneracy at the Γ point and drives the system deep into the Mott-insulating phase. However, the computed Δ and conduction electron bandwidth W cannot alone account for the abnormally low experimental Néel temperature, TN=11 K, of the methylamine compound, compared to the much higher value TN=40 K of the ammonia one. Significant interactions between CH3NH2 and C603- are responsible for the stabilization of particular fullerene-cage distortions and the ensuing low-spin S=1/2 state. These interactions also seem to affect the magnetic properties, as interfullerene exchange interactions depend on the relative orientation of deformations of neighboring C603- molecules. For the ferro-orientational order of CH3NH2-K+ groups we find an apparent reduced dimensionality in magnetic exchange interactions, which may explain the suppressed Néel temperature. The disorder in exchange interactions caused by orientational disorder of CH3NH2-K+ groups could further contribute to this suppression.

  9. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  10. Phase transitions enable computational universality in neuristor-based cellular automata

    International Nuclear Information System (INIS)

    Pickett, Matthew D; Stanley Williams, R

    2013-01-01

    We recently demonstrated that Mott memristors, two-terminal devices that exhibit threshold switching via an insulator to conductor phase transition, can serve as the active components necessary to build a neuristor, a biomimetic threshold spiking device. Here we extend those results to demonstrate, in simulation, neuristor-based circuits capable of performing general Boolean logic operations. We additionally show that these components can be used to construct a one-dimensional cellular automaton, rule 137, previously proven to be universal. This proof-of-principle shows that localized phase transitions can perform spiking computation, which is of particular interest for neuromorphic hardware. (paper)

  11. Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

    KAUST Repository

    Asayesh-Ardakani, Hasti

    2015-10-12

    There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

  12. Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2017-06-01

    Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

  13. Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2 Nanowires.

    Science.gov (United States)

    Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M; Zhu, Yihan; Phillips, Patrick J; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke-Bin; Klie, Robert F; Banerjee, Sarbajit; Odegard, Gregory M; Shahbazian-Yassar, Reza

    2015-11-11

    There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO2) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO2 are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WxV1-xO2 nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122̅) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO2 structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

  14. Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

    KAUST Repository

    Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M.; Zhu, Yihan; Phillips, Patrick J.; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke Bin; Klie, Robert F.; Banerjee, Sarbajit; Odegard, Gregory M.; Shahbazian-Yassar, Reza

    2015-01-01

    There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

  15. Thermophysical, Electrical, and Optical Properties of Selected Metal-Nonmetal Transition Materials: Comprehensive Bibliography with Typical Data.

    Science.gov (United States)

    1978-02-01

    Brueckner, G., " Positron Annihilation in Vanadium(IV) Oxide and Vanadium(III) Oxide," Zentralinst. Kernforsch., Rossendorf, Dresden, ZEK-295, 93-4, 1975...Phys.-Solid State, 17(5), 851-5, 1975. A000130. Andreeff, A. and Brauer, G., " Positron Annihilation Study of the Metal- Insulator Transition in V20 3...thermal expansion at 298 K. Sample N o. a TH l Mkta1 l c phase X - 0 . 0 0 20.2 0.3 - b6 . 0.3 0.04 TI 24.4 -5.6 4-moleli Mgo 25.5 2.0 -9.5 * 2.0 16

  16. Interplay of long-range and short-range Coulomb interactions in an Anderson-Mott insulator

    Science.gov (United States)

    Baćani, Mirko; Novak, Mario; Orbanić, Filip; Prša, Krunoslav; Kokanović, Ivan; Babić, Dinko

    2017-07-01

    In this paper, we tackle the complexity of coexisting disorder and Coulomb electron-electron interactions (CEEIs) in solids by addressing a strongly disordered system with intricate CEEIs and a screening that changes both with charge carrier doping level Q and temperature T . We report on an experimental comparative study of the T dependencies of the electrical conductivity σ and magnetic susceptibility χ of polyaniline pellets doped with dodecylbenzenesulfonic acid over a wide range. This material is special within the class of doped polyaniline by exhibiting in the electronic transport a crossover between a low-T variable range hopping (VRH) and a high-T nearest-neighbor hopping (NNH) well below room temperature. Moreover, there is evidence of a soft Coulomb gap ΔC in the disorder band, which implies the existence of a long-range CEEI. Simultaneously, there is an onsite CEEI manifested as a Hubbard gap U and originating in the electronic structure of doped polyaniline, which consists of localized electron states with dynamically varying occupancy. Therefore, our samples represent an Anderson-Mott insulator in which long-range and short-range CEEIs coexist. The main result of the study is the presence of a crossover between low- and high-T regimes not only in σ (T ) but also in χ (T ) , the crossover temperature T* being essentially the same for both observables over the entire doping range. The relatively large electron localization length along the polymer chains results in U being small, between 12 and 20 meV for the high and low Q , respectively. Therefore, the thermal energy at T* is sufficiently large to lead to an effective closing of the Hubbard gap and the consequent appearance of NNH in the electronic transport within the disorder band. ΔC is considerably larger than U , decreasing from 190 to 30 meV as Q increases, and plays the role of an activation energy in the NNH.

  17. Stable-unstable transition for a Bose-Hubbard chain coupled to an environment

    Science.gov (United States)

    Guo, Chu; de Vega, Ines; Schollwöck, Ulrich; Poletti, Dario

    2018-05-01

    Interactions in quantum systems may induce transitions to exotic correlated phases of matter which can be vulnerable to coupling to an environment. Here, we study the stability of a Bose-Hubbard chain coupled to a bosonic bath at zero and nonzero temperature. We show that only above a critical interaction the chain loses bosons and its properties are significantly affected. The transition is of a different nature than the superfluid-Mott-insulator transition and occurs at a different critical interaction. We explain such a stable-unstable transition by the opening of a global charge gap. The comparison of accurate matrix product state simulations to approximative approaches that miss this transition reveals its many-body origin.

  18. Electronic and thermodynamic properties of the transition between metallic and nonmetallic states in dense media

    International Nuclear Information System (INIS)

    Fortin, Xavier

    1971-01-01

    The effects of thermal excitation are introduced in the study of a simple electronic structure model for condensed media. The choice of a particle-interaction potential leads to a self-consistent calculation performed on a computer. This calculation gives a metal - nonmetal transition similar to the MOTT transition. We consider the effects of temperature and density variations upon this transition. It is possible to make use of this electronic structure to obtain the thermodynamic properties near the transition: pressure, free energy, sound velocity. The numerical results of this simple model are satisfactory. Particularly, if a dielectric constant is taken into account, the transition temperature and density are of the same order of magnitude as those observed experimentally in semiconductors. (author) [fr

  19. Structural phase transition at the percolation threshold in epitaxial (La0.7Ca0.3MnO3)1-x:(MgO)x nanocomposite films.

    Science.gov (United States)

    Moshnyaga, V; Damaschke, B; Shapoval, O; Belenchuk, A; Faupel, J; Lebedev, O I; Verbeeck, J; van Tendeloo, G; Mücksch, M; Tsurkan, V; Tidecks, R; Samwer, K

    2003-04-01

    'Colossal magnetoresistance' in perovskite manganites such as La0.7Ca0.3MnO3 (LCMO), is caused by the interplay of ferro-paramagnetic, metal-insulator and structural phase transitions. Moreover, different electronic phases can coexist on a very fine scale resulting in percolative electron transport. Here we report on (LCMO)1-x:(MgO)x (0 strain. The largest colossal magnetoresistance of 10(5)% was observed at the percolation threshold in the conductivity at xc 0.3, which is coupled to a structural phase transition from orthorhombic (0 < x < or 0.1) to rhombohedral R3c structure (0.33 < or = x < or = 0.8). An increase of the Curie temperature for the Rc phase was observed. These results may provide a general method for controlling the magnetotransport properties of manganite-based composite films by appropriate choice of the second phase.

  20. A dosemeter with a metal-insulator-semiconductor structure

    International Nuclear Information System (INIS)

    Digoy, J.-L.

    1973-01-01

    Description is given of a semiconducting device for measuring irradiation doses, this device being a Mosfet structure, field effect and insulated-gate device of revolution, with a cylindrical effective surface and ring-shaped source and drain. This can be applied to the measurement of doses up to 10 4 rads, for radiations of a few keV, in the field of in-vivo biology, in a flowing fluid [fr

  1. Phase transition study in strongly correlated VO{sub 2} based sensing systems

    Energy Technology Data Exchange (ETDEWEB)

    Simo, A., E-mail: alinesimo.aline@gmail.com [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa); Kaviyarasu, K. [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa); Mwakikunga, B. [Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Madjoe, R. [Physics Department, University of Western Cape, 7535 Belville Cape Town (South Africa); Gibaud, A. [Laboratoire de Physique de l’Etat Condensé, Université du Maine Faculte des sciences, UPRESA 6087, 72085, Le Mans Cedex 9 (France); Maaza, M. [UNESCO-UNISA Africa Chair in Nanoscience’s/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province (South Africa)

    2017-04-15

    Highlights: • At 230 °C for about 48 h to prepare successfully VO{sub 2} nanobelts. • 1D shows good sensing performance due to the large active surface of the material. • The good selectivity of methanol compared to acetone and isopropanol. • VOC compounds was observed at room temperature. - Abstract: Intermediate phase monoclinic M2 was observed by inducing in situ X-ray thermo diffraction on VO{sub 2} (M) nanoplatelets. The solid-solid phase transition occurs at around 65 °C assisted with the percolative transition metal-insulator. The existence of an intermediate crystalline phase with room temperature insulator phase and high temperature metallic phase across MIT in VO{sub 2} could be of relevance to understand structural contributions to the phase transition dynamics. In addition, pellet of VO{sub 2} nanostructures have shown to present good sensing properties to various alcohols vapors at room temperature and good selectivity of methanol with 5.54% sensitivity and limit detection below 5 ppm, compared to isopropanol 3.2% and acetone 2.4% respectively.

  2. Transitional Justice

    DEFF Research Database (Denmark)

    Gissel, Line Engbo

    This presentation builds on an earlier published article, 'Contemporary Transitional Justice: Normalising a Politics of Exception'. It argues that the field of transitional justice has undergone a shift in conceptualisation and hence practice. Transitional justice is presently understood to be th...... to be the provision of ordinary criminal justice in contexts of exceptional political transition.......This presentation builds on an earlier published article, 'Contemporary Transitional Justice: Normalising a Politics of Exception'. It argues that the field of transitional justice has undergone a shift in conceptualisation and hence practice. Transitional justice is presently understood...

  3. Quantifying Complexity in Quantum Phase Transitions via Mutual Information Complex Networks.

    Science.gov (United States)

    Valdez, Marc Andrew; Jaschke, Daniel; Vargas, David L; Carr, Lincoln D

    2017-12-01

    We quantify the emergent complexity of quantum states near quantum critical points on regular 1D lattices, via complex network measures based on quantum mutual information as the adjacency matrix, in direct analogy to quantifying the complexity of electroencephalogram or functional magnetic resonance imaging measurements of the brain. Using matrix product state methods, we show that network density, clustering, disparity, and Pearson's correlation obtain the critical point for both quantum Ising and Bose-Hubbard models to a high degree of accuracy in finite-size scaling for three classes of quantum phase transitions, Z_{2}, mean field superfluid to Mott insulator, and a Berzinskii-Kosterlitz-Thouless crossover.

  4. Quantifying Complexity in Quantum Phase Transitions via Mutual Information Complex Networks

    Science.gov (United States)

    Valdez, Marc Andrew; Jaschke, Daniel; Vargas, David L.; Carr, Lincoln D.

    2017-12-01

    We quantify the emergent complexity of quantum states near quantum critical points on regular 1D lattices, via complex network measures based on quantum mutual information as the adjacency matrix, in direct analogy to quantifying the complexity of electroencephalogram or functional magnetic resonance imaging measurements of the brain. Using matrix product state methods, we show that network density, clustering, disparity, and Pearson's correlation obtain the critical point for both quantum Ising and Bose-Hubbard models to a high degree of accuracy in finite-size scaling for three classes of quantum phase transitions, Z2, mean field superfluid to Mott insulator, and a Berzinskii-Kosterlitz-Thouless crossover.

  5. Phase transitions and spin excitations of spin-1 bosons in optical lattice

    Science.gov (United States)

    Zhu, Min-Jie; Zhao, Bo

    2018-03-01

    For spin-1 bosonic system trapped in optical lattice, we investigate two main problems, including MI-SF phase transition and magnetic phase separations in MI phase, with extended standard basis operator (SBO) method. For both ferromagnetic (U2 0) systems, we analytically figure out the symmetry properties in Mott-insulator and superfluid phases, which would provide a deeper insight into the MI-SF phase transition process. Then by applying self-consistent approach to the method, we include the effect of quantum and thermal fluctuations and derive the MI-SF transition phase diagram, which is in quantitative agreement with recent Monte-Carlo simulation at zero temperature, and at finite temperature, we find the underestimation of finite-temperature-effect in the mean-field approximation method. If we further consider the spin excitations in the insulating states of spin-1 system in external field, distinct spin phases are expected. Therefore, in the Mott lobes with n = 1 and n = 2 atoms per site, we give analytical and numerical boundaries of the singlet, nematic, partially magnetic and ferromagnetic phases in the magnetic phase diagrams.

  6. Supporting Transition

    Science.gov (United States)

    Qureshi, Asima; Petrucco, James

    2018-01-01

    Meadowbrook Primary School has explored the use of The Teacher Assessment in Primary Science (TAPS) to support transition, initially for transfer to secondary school and now for transition from Early Years Foundation Stage (EYFS) into Key Stage 1 (ages 5-7). This article will consider an example of a secondary transition project and discuss the…

  7. De la motte au château d’artillerie, la fouille du château de Guingamp (Côtes-d’Armor

    Directory of Open Access Journals (Sweden)

    Laurent Beuchet

    2010-02-01

    Full Text Available L’opération d’archéologie préventive du château de Guingamp (Côtes-d’Armor a été réalisée dans le cadre d'un projet de création d'une salle culturelle sur le site du château. La fouille a été menée sur une superficie de 2000 m², sur une durée effective de cinq mois entre octobre 2004 et mars 2005, avec un effectif moyen de sept personnes.À l’issue de la fouille, trois phases principales d’occupation peuvent être identifiées :la motte des Comtes de Guingamp (XIe-XIIe s. ;une enceinte polygon...

  8. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  9. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations; Etude de la transition resistive sur des composes supraconducteurs a haute temperature critique le role des fluctuations

    Energy Technology Data Exchange (ETDEWEB)

    Pagnon, V

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that`s incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity.

  10. Single crystal growth and structural evolution across the 1st order valence transition in (Pr1-yYy)1-xCaxCoO3-δ

    Science.gov (United States)

    Schreiber, N. J.; Zhang, Junjie; Zheng, Hong; Freeland, J. W.; Chen, Yu-Sheng; Mitchell, J. F.; Phelan, D.

    2017-10-01

    Praseodymium-containing cobalt perovskites, such as (Pr1-yYy)1-xCaxCoO3-δ, have been argued to undergo a first-order charge shift between Pr and hybridized Co-O orbitals that leads to a metal-insulator transition at a temperature, TVT. Magnetization and x-ray absorption spectroscopy measurements on single crystals of (Pr0.85Y0.15)0.7Ca0.3CoO3-δ grown in an IR image furnace under 40-60 bar of oxygen confirm the presence of this valence transition. Single crystal x-ray synchrotron diffraction measurements are consistent with an isomorphic phase transition at TVT. No evidence of charge ordering was revealed by the single crystal diffraction. Dissimilar to analytical transmission electron microscopy measurements performed on a grain from a polycrystalline sample that revealed an oxygen vacancy order-disorder transition at TVT, the present single-crystal measurements did not evidence such a transition, likely reflecting a lower density of oxygen vacancies in the high-pO2 grown single crystals.

  11. Insulator-metal transition of fluid molecular hydrogen

    International Nuclear Information System (INIS)

    Ross, M.

    1996-01-01

    Dynamically compressed fluid hydrogen shows evidence for metallization at the relatively low pressure of 140 GPa (1.4 Mbar) while experiments on solid hydrogen made in a diamond-anvil cell have failed to detect any evidence for gap closure up to a pressure of 230 GPa (2.3 Mbar). Two possible mechanisms for metal- liclike resistivity are put forward. The first is that as a consequence of the large thermal disorder in the fluid (kT∼0.2 endash 0.3 eV) short-range molecular interactions lead to band tailing that extends the band edge into the gap, resulting in closure at a lower pressure than in the solid. The second mechanism argues that molecular dissociation creates H atoms that behave similar to n-type donors in a heavily doped semiconductor and undergo a nonmetal-metal Mott-type transition. copyright 1996 The American Physical Society

  12. Transition radiation and transition scattering

    International Nuclear Information System (INIS)

    Ginzburg, V.L.

    1982-01-01

    Transition radiation is a process of a rather general character. It occurs when some source, which does not have a proper frequency (for example, a charge) moves at a constant velocity in an inhomogeneous and (or) nonstationary medium or near such a medium. The simplest type of transition radiation takes place when a charge crosses a boundary between two media (the role of one of the media may be played by vacuum). In the case of periodic variation of the medium, transition radiation possesses some specific features (resonance transition radiation or transition scattering). Transition scattering occurs, in particular, when a permittivity wave falls onto an nonmoving (fixed) charge. Transition scattering is closely connected with transition bremsstrahlung radiation. All these transition processes are essential for plasma physics. Transition radiation and transition scattering have analogues outside the framework of electrodynamics (like in the case of Vavilov-Cherenkov radiation). In the present report the corresponding range of phenomena is elucidated, as far as possible, in a generally physical aspect. (Auth.)

  13. Phase transitions

    CERN Document Server

    Sole, Ricard V; Solé, Ricard V; Solé, Ricard V; Sol, Ricard V; Solé, Ricard V

    2011-01-01

    Phase transitions--changes between different states of organization in a complex system--have long helped to explain physics concepts, such as why water freezes into a solid or boils to become a gas. How might phase transitions shed light on important problems in biological and ecological complex systems? Exploring the origins and implications of sudden changes in nature and society, Phase Transitions examines different dynamical behaviors in a broad range of complex systems. Using a compelling set of examples, from gene networks and ant colonies to human language and the degradation of diverse ecosystems, the book illustrates the power of simple models to reveal how phase transitions occur. Introductory chapters provide the critical concepts and the simplest mathematical techniques required to study phase transitions. In a series of example-driven chapters, Ricard Solé shows how such concepts and techniques can be applied to the analysis and prediction of complex system behavior, including the origins of ...

  14. Hall-effect characterization of the metamagnetic transition in FeRh

    International Nuclear Information System (INIS)

    De Vries, M A; Loving, M; Lewis, L H; Mihai, A P; Marrows, C H; Heiman, D

    2013-01-01

    The antiferromagnetic ground state and the metamagnetic transition to the ferromagnetic state of CsCl-ordered FeRh epilayers have been characterized using Hall and magnetoresistance measurements. On cooling into the ground state, the metamagnetic transition is found to coincide with a suppression in carrier density of at least an order of magnitude below the typical metallic level that is shown by the ferromagnetic state. The carrier density in the antiferromagnetic state is limited by intrinsic doping from Fe/Rh substitution defects, with approximately two electrons per pair of atoms swapped, showing that the decrease in carrier density could be even larger in more perfect specimens. The surprisingly large change in carrier density is a clear quantitative indication of the extent of change at the Fermi surface at the metamagnetic transition, confirming that entropy release at the transition is of electronic origin, and hence that an electronic transition underlies the metamagnetic transition. Regarding the nature of this electronic transition, it is suggested that an orbital selective Mott transition, selective to strongly-correlated Fe 3d electrons, could cause the reduction in the Fermi surface and change in sign of the magnetic exchange from FM to AF on cooling. (paper)

  15. Ultrafast Doublon Dynamics in Photoexcited 1 T -TaS2

    Science.gov (United States)

    Ligges, M.; Avigo, I.; Golež, D.; Strand, H. U. R.; Beyazit, Y.; Hanff, K.; Diekmann, F.; Stojchevska, L.; Kalläne, M.; Zhou, P.; Rossnagel, K.; Eckstein, M.; Werner, P.; Bovensiepen, U.

    2018-04-01

    Strongly correlated materials exhibit intriguing properties caused by intertwined microscopic interactions that are hard to disentangle in equilibrium. Employing nonequilibrium time-resolved photoemission spectroscopy on the quasi-two-dimensional transition-metal dichalcogenide 1 T -Ta S2 , we identify a spectroscopic signature of doubly occupied sites (doublons) that reflects fundamental Mott physics. Doublon-hole recombination is estimated to occur on timescales of electronic hopping ℏ/J ≈14 fs . Despite strong electron-phonon coupling, the dynamics can be explained by purely electronic effects captured by the single-band Hubbard model under the assumption of weak hole doping, in agreement with our static sample characterization. This sensitive interplay of static doping and vicinity to the metal-insulator transition suggests a way to modify doublon relaxation on the few-femtosecond timescale.

  16. Random matrix theory of the energy-level statistics of disordered systems at the Anderson transition

    Energy Technology Data Exchange (ETDEWEB)

    Canali, C M

    1995-09-01

    We consider a family of random matrix ensembles (RME) invariant under similarity transformations and described by the probability density P(H) exp[-TrV(H)]. Dyson`s mean field theory (MFT) of the corresponding plasma model of eigenvalues is generalized to the case of weak confining potential, V(is an element of) {approx} A/2 ln{sup 2}(is an element of). The eigenvalue statistics derived from MFT are shown to deviate substantially from the classical Wigner-Dyson statistics when A < 1. By performing systematic Monte Carlo simulations on the plasma model, we compute all the relevant statistical properties of the RME with weak confinement. For A{sub c} approx. 0.4 the distribution function of the level spacings (LSDF) coincides in a large energy window with the energy LSDF of the three dimensional Anderson model at the metal-insulator transition. For the same A = A{sub c}, the RME eigenvalue-number variance is linear and its slope is equal to 0.32 {+-} 0.02, which is consistent with the value found for the Anderson model at the critical point. (author). 51 refs, 10 figs.

  17. Random matrix theory of the energy-level statistics of disordered systems at the Anderson transition

    International Nuclear Information System (INIS)

    Canali, C.M.

    1995-09-01

    We consider a family of random matrix ensembles (RME) invariant under similarity transformations and described by the probability density P(H) exp[-TrV(H)]. Dyson's mean field theory (MFT) of the corresponding plasma model of eigenvalues is generalized to the case of weak confining potential, V(is an element of) ∼ A/2 ln 2 (is an element of). The eigenvalue statistics derived from MFT are shown to deviate substantially from the classical Wigner-Dyson statistics when A c approx. 0.4 the distribution function of the level spacings (LSDF) coincides in a large energy window with the energy LSDF of the three dimensional Anderson model at the metal-insulator transition. For the same A = A c , the RME eigenvalue-number variance is linear and its slope is equal to 0.32 ± 0.02, which is consistent with the value found for the Anderson model at the critical point. (author). 51 refs, 10 figs

  18. Synthesis and characterization of nanostructured transition metal oxides for energy storage devices

    Science.gov (United States)

    Kim, Jong Woung

    Finding a promising material and constructing a new method to have both high energy and power are key issues for future energy storage systems. This dissertation addresses three different materials systems to resolve those issues. Pseudocapacitive materials such as RuO2 and MnO2 display high capacitance but Nb2O5, displays a different charge storage mechanism, one highly dependent on its crystal phase rather than its surface area. Various sol-gel techniques were used to synthesize the different phases of Nb2O5 and electrochemical testing was used to study their charge storage with some phases displaying comparable charge storage to MnO2. To overcome the electrical limitations of using an insulating material, the core-shell structure (Nb2O 5/C) was also examined and the method could be generalized to improve other pseudocapacitors. Besides electronic conductivity, the diffusion of the electrolyte ions through the shell material is a critical factor for fast charging/discharging in the core-shell structure. This dissertation also involves another topic, a reconfigurable electrode, that displays both high energy and power density. By constructing a reconfigurable electrode which has different electrical properties (metallic or insulating state) depending on the amount of intercalated `guest' ions into `host' material, it can be used as a battery or electrochemical capacitor material in the insulating or metallic state respectively. Metal oxide bronzes having metal-insulator transition were investigated in this study.

  19. Transit transparency.

    Science.gov (United States)

    2012-07-01

    Public transit agencies have employed intelligent systems for determining : schedules and routes and for monitoring the real-time location and status of their : vehicle fleets for nearly two decades. But until recently, the data generated by : daily ...

  20. Compton scattering on the γ-α phase transition in cerium

    International Nuclear Information System (INIS)

    Kornstaedt, U.

    1979-07-01

    Compton profiles for γ- and α-Cer were measured using Cr51 as a γ-radiation source. The experimental profiles have been corrected for multiple scattering by Monte-Carlo techniques. The corrected profiles are compared with theoretical profiles which are calculated on the basis of the renormalized free atom model for 6s electrons and the tight-binding model of 4f and 5d electrons. The experimental results show clearly that the promotional model is not valid. Instead a possible explanation for the observed phase transition may be a Mott transition. To better determine this, improved electron wave functions, such as might be obtained by band structure calculations, are needed. (orig.) [de

  1. Passivity of 316L stainless steel in borate buffer solution studied by Mott-Schottky analysis, atomic absorption spectrometry and X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Feng Zhicao; Cheng Xuequn; Dong Chaofang; Xu Lin; Li Xiaogang

    2010-01-01

    Research highlights: → The polarization curve of 316L SS possesses five turning potentials in passive region. → Films formed at turning potentials perform different electrochemical and semiconductor properties. → Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. → Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V SCE , 0.2 V SCE , 0.4 V SCE , 0.6 V SCE and 0.85 V SCE ). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. Further, the compositions of the passive films formed at turning potentials are investigated. The results reasonably explain why these potentials appear in the passive region and why specimens perform different properties at turning potentials.

  2. Charge-transfer and Mott-Hubbard Excitations in FeBo3: Fe K-edge resonant Inelastic x-ray scattering study

    International Nuclear Information System (INIS)

    Kim, J.; Shvydko, Y.

    2011-01-01

    Momentum-resolved resonant inelastic x-ray scattering (RIXS) spectroscopy has been carried out successfully at the Fe K-edge for the first time. The RIXS spectra of a FeBO 3 single crystal reveal a wealth of information on ∼ 1-10 eV electronic excitations. The IXS signal resonates when the incident photon energy approaches the pre-edge (1s - -3d) and the main-edge (1s - -4p) of the Fe K-edge absorption spectrum. The RIXS spectra measured at the pre-edge and the main-edge show quantitatively different dependences on the incident photon energy, momentum transfer, photon polarization, and temperature. We present a multielectron analysis of the Mott-Hubbard (MH) and charge transfer (CT) excitations, and calculate their energies. Electronic excitations observed in the pre-edge and main-edge RIXS spectra are interpreted as MH and CT excitations, respectively. We propose the electronic structure around the chemical potential in FeBO 3 based on the experimental data.

  3. Uniaxial-Strain-Orientation Dependence of the Competition between Mott and Charge Ordered Phases and their Corresponding Superconductivity of β-(BDA-TTP)2I3

    Science.gov (United States)

    Nuruzzaman, Md.; Yokogawa, Keiichi; Yoshino, Harukazu; Yoshimoto, Haruo; Kikuchi, Koichi; Kaihatsu, Takayuki; Yamada, Jun-ichi; Murata, Keizo

    2012-12-01

    We studied the electronic transport properties of the charge transfer salt β-(BDA-TTP)2I3 [BDA-TTP: 2,5-bis(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene] by applying uniaxial strains along the three crystallographic axes, and obtained three corresponding temperature-pressure phase diagrams. Three phase diagrams were quite dependent on the direction of compression. Following the preceding paper by Kikuchi et al., we speculate that the insulating states are of 1/2-filled Mott insulators for the a- and b-axes compressions, and of 1/4-filled charge ordered states for the c-axis compression as well as hydrostatic pressure. The superconducting phase under uniaxial strain was realized with Tc = 5 K at 1.9 GPa along the a-axis and with Tc = 5.6 K at 1.75 GPa along the b-axis. Superconductivity was also reproduced with a Tc of 9.5 K at 1.0 GPa for the c-axis compressions in the range of 0.85 to 1.53 GPa as previously reported. We studied tentative measurement on upper critical fields, Bc2's of these superconductivities and found that the extrapolated values, Bc2(0)'s, exceeded Pauli-limit by about 2--3 times. However, at least in terms of Bc2, the difference in superconductivity associated with two different insulating states was not clear.

  4. Contributions to energy research. Beitraege zur Energieforschung; A: Energie und Gesellschaft, B: Mott-Schottky Plots von p-Silizium in Acetonitril

    Energy Technology Data Exchange (ETDEWEB)

    Zeyer, C J

    1993-01-01

    Part A of this thesis deals with the question whether solar energy research makes sense or not. Based on physical considerations, the state of solar energy technology and its future potential it is shown that it is impossible to realize the solar alternative with today's dynamic of energy consumption. Nevertheless in long terms, there is no alternative to solar energy, if we are taking into account the pollution problems by hydrocarbon and nuclear energy production. Therefore the factors that determine energy consumption have to be investigated. The analysis shows that energy consumption is not only determined by natural science but more than this by social aspects. In the author's opinion, the most important factors are: the structure of society (including aspects of organization and geographical structures of the economic system), the way how society deals with energy (including role of energy prize) and the ethic background of society and its connection to energy consumption. Focussed on environmental and energy problems, these aspects and its interconnections are discussed in 21 theses. Part B of this thesis describes an electrochemical method of characterization of semiconductors, the so-called Mott-Schottky plots and the results which have been obtained by this method with p-type silicon in acetonitrile. (author) figs., tabs., refs.

  5. Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Yang; Yang, Liuxiang; Chen, Cheng-Chien; Kim, Heung-Sik; Han, Myung Joon; Luo, Wei; Feng, Zhenxing; Upton, Mary; Casa, Diego; Kim, Jungho; Gog, Thomas; Zeng, Zhidan; Cao, Gang; Mao, Ho-kwang; van Veenendaal, Michel

    2016-05-24

    The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr3Ir2O7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

  6. La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAl O3 /SrTi O3

    Science.gov (United States)

    Zhou, Jun; Yang, Ming; Feng, Yuan Ping; Rusydi, Andrivo

    2017-11-01

    Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronic applications. Here, based on first-principles calculations, we propose a surface La interstitial promoted interface insulator-metal transition in LaAl O3 /SrTi O3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAl O3 /SrTi O3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in an ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with a Ti dy z/dx z character at a conducting LaAl O3 /SrTi O3 (110) interface. On the other hand, for insulating LaAl O3 /SrTi O3 (110) (<4 unit cells LaAl O3 thickness), a distortion between La (Al) and O atoms is found at the LaAl O3 side, partially compensating the polarization divergence. Our results reveal the origin of the metal-insulator transition in LaAl O3 /SrTi O3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAl O3 /SrTi O3 (110) for different possibilities in electronic and magnetic applications.

  7. On the nature of the phase transition in uranium dioxide

    Science.gov (United States)

    Gofryk, K.; Mast, D.; Antonio, D.; Shrestha, K.; Andersson, D.; Stanek, C.; Jaime, M.

    Uranium dioxide (UO2) is by far the most studied actinide material as it is a primary fuel used in light water nuclear reactors. Its thermal and magnetic properties remain, however, a puzzle resulting from strong couplings between magnetism and lattice vibrations. UO2 crystalizes in the face-centered-cubic fluorite structure and is a Mott-Hubbard insulator with well-localized uranium 5 f-electrons. In addition, below 30 K, a long range antiferromagnetic ordering of the electric-quadrupole of the uranium moments is observed, forming complex non-collinear 3-k magnetic structure. This transition is accompanied by Jahn-Teller distortion of oxygen atoms. It is believed that the first order nature of the transition results from the competition between the exchange interaction and the Jahn-Teller distortion. Here we present results of our extensive thermodynamic investigations on well-characterized and oriented single crystals of UO2+x (x = 0, 0.033, 0.04, and 0.11). By focusing on the transition region under applied magnetic field we are able to study the interplay between different competing interactions (structural, magnetic, and electrical), its dynamics, and relationship to the oxygen content. We will discuss implications of these results. Work supported by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences, and Engineering Division.

  8. Metal–semiconductor transition in atomically thin Bi2Sr2Co2O8 nanosheets

    Directory of Open Access Journals (Sweden)

    Yang Wang

    2014-09-01

    Full Text Available Two-dimensional layered materials have attracted considerable attention since the discovery of graphene. Here we demonstrate that the layered Bi2Sr2Co2O8 (BSCO can be mechanically exfoliated into single- or few-layer nanosheets. The BSCO nanosheets with four or more layers display bulk metallic characteristics, while the nanosheets with three or fewer layers have a layer-number-dependent semiconducting characteristics. Charge transport in bilayer or trilayer BSCO nanosheets exhibits Mott 2D variable-range-hopping (VRH conduction throughout 2 K–300 K, while the charge transport in monolayers follows the Mott-VRH law above a crossover temperature of 75 K, and is governed by Efros and Shklovskii-VRH laws below 75 K. Disorder potentials and Coulomb charging both contribute to the transport gap of these nanodevices. Our study reveals a distinct layer number-dependent metal-to-semiconductor transition in a new class of 2D materials, and is of great significance for both fundamental investigations and practical devices.

  9. Magnetism and the low-energy electronic structure of Mott insulators K{sub 2}CoF{sub 4} and SrMnO{sub 3} perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Nalecz, D.M., E-mail: sfnalecz@cyf-kr.edu.pl [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Radwanski, R.J. [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland); Ropka, Z. [Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland)

    2016-09-01

    For Mott insulators, K{sub 2}CoF{sub 4} and SrMnO{sub 3}, we have calculated, in the purely ionic model, the low-energy electronic structure both in the paramagnetic and magnetic state as well as zero-temperature magnetic moment, its direction and its temperature dependence. We have calculated the octahedral crystal-field strength 10Dq to be 0.98 and 2.25 eV. We claim that for an adequate theoretical description of magnetic properties even small local distortions and the intra-atomic relativistic spin-orbit coupling have to be taken into account. Our studies have revealed a strong interplay of the magnetism, the orbital moment in particular, with the local crystallographic structure. The calculated orbital moment in K{sub 2}CoF{sub 4} is very large, 1.06 μ{sub B}, giving 30% contribution to the total moment - this result points the necessity to “unquench” the orbital magnetism in 3d compounds. We consistently described magnetic and some optical properties of these compounds, containing atoms with incomplete 3d shell, in agreement with their insulating ground state. - Highlights: • The octahedral crystal-field 10Dq amounts to 0.98 and 2.25 eV in K{sub 2}CoF{sub 4} and SrMnO{sub 3}. • The low-energy electronic structures in the magnetic state is displayed. • There is a strong interplay of the magnetism and the local crystal structure. • Temperature dependence of the Mn{sup 4+}- ion magnetic moment has been described. • Relativistic spin-orbit coupling is indispensable for description of 3d magnetism.

  10. Theory of quantum metal to superconductor transitions in highly conducting systems

    Energy Technology Data Exchange (ETDEWEB)

    Spivak, B.

    2010-04-06

    We derive the theory of the quantum (zero temperature) superconductor to metal transition in disordered materials when the resistance of the normal metal near criticality is small compared to the quantum of resistivity. This can occur most readily in situations in which 'Anderson's theorem' does not apply. We explicitly study the transition in superconductor-metal composites, in an swave superconducting film in the presence of a magnetic field, and in a low temperature disordered d-wave superconductor. Near the point of the transition, the distribution of the superconducting order parameter is highly inhomogeneous. To describe this situation we employ a procedure which is similar to that introduced by Mott for description of the temperature dependence of the variable range hopping conduction. As the system approaches the point of the transition from the metal to the superconductor, the conductivity of the system diverges, and the Wiedemann-Franz law is violated. In the case of d-wave (or other exotic) superconductors we predict the existence of (at least) two sequential transitions as a function of increasing disorder: a d-wave to s-wave, and then an s-wave to metal transition.

  11. Splitting of electrons and violation of the Luttinger sum rule

    Science.gov (United States)

    Quinn, Eoin

    2018-03-01

    We obtain a controlled description of a strongly correlated regime of electronic behavior. We begin by arguing that there are two ways to characterize the electronic degree of freedom, either by the canonical fermion algebra or the graded Lie algebra su (2 |2 ) . The first underlies the Fermi liquid description of correlated matter, and we identify a regime governed by the latter. We exploit an exceptional central extension of su (2 |2 ) to employ a perturbative scheme recently developed by Shastry and obtain a series of successive approximations for the electronic Green's function. We then focus on the leading approximation, which reveals a splitting in two of the electronic dispersion. The Luttinger sum rule is violated, and a Mott metal-insulator transition is exhibited. We offer a perspective.

  12. Synthesis and structural, magnetic, thermal, and transport properties of several transition metal oxides and aresnides

    Energy Technology Data Exchange (ETDEWEB)

    Das, Supriyo [Iowa State Univ., Ames, IA (United States)

    2010-01-01

    Oxide compounds containing the transition metal vanadium (V) have attracted a lot of attention in the field of condensed matter physics owing to their exhibition of interesting properties including metal-insulator transitons, structural transitions, ferromagnetic and an- tiferromagnetic orderings, and heavy fermion behavior. Binary vanadium oxides VnO2n-1 where 2 ≤ n ≤ 9 have triclinic structures and exhibit metal-insulator and antiferromagnetic transitions.[1–6] The only exception is V7O13 which remains metallic down to 4 K.[7] The ternary vanadium oxide LiV2O4 has the normal spinel structure, is metallic, does not un- dergo magnetic ordering and exhibits heavy fermion behavior below 10 K.[8] CaV2O4 has an orthorhombic structure[9, 10] with the vanadium spins forming zigzag chains and has been suggested to be a model system to study the gapless chiral phase.[11, 12] These provide great motivation for further investigation of some known vanadium compounds as well as to ex- plore new vanadium compounds in search of new physics. This thesis consists, in part, of experimental studies involving sample preparation and magnetic, transport, thermal, and x- ray measurements on some strongly correlated eletron systems containing the transition metal vanadium. The compounds studied are LiV2O4, YV4O8, and YbV4O8. The recent discovery of superconductivity in RFeAsO1-xFx (R = La, Ce, Pr, Gd, Tb, Dy, Sm, and Nd), and AFe2As2 (A = Ba, Sr, Ca, and Eu) doped with K, Na, or Cs at the A site with relatively high Tc has sparked tremendous activities in the condensed matter physics community and a renewed interest in the area of superconductivity as occurred following the discovery of the layered cuprate high Tc superconductors in 1986. To discover more supercon- ductors

  13. Interacton-driven phenomena and Wigner transition in two-dimensional systems

    Science.gov (United States)

    Knighton, Talbot

    The formation of a quantum Wigner Cyrstal (WC) is one of the most anticipated predictions of electron-electron interaction. This is expected to occur in zero magnetic field when the Coulomb energy EC dominates over the Fermi energy EF (at a ratio rs ≡ EC/ EF ˜ 37) for temperatures T quench the kinetic energy. As B increases, various energies compete to produce the ground state. High purity systems with large interaction rs >1 tend to exhibit reentrant insulating phases (RIP) between the integer and fractional Hall states. These are suspected to be a form of WC, but the evidence is not yet conclusive. We use transport measurements to identify a conduction threshold in the RIP at filling factor nu = 0.37 (close to the 1/3 state) that is several orders of magnitude larger than the pinning observed in many other systems. We analyze the temperature and electric E-field dependence of this insulating phase and find them to be consistent with a second-order phase transition to WC. The measurements are performed on dilute holes p = 4 x 1010 cm-2 of mobility mu = 1/perho ˜ 2.5 x 106 cm 2/Vs in 20 nm GaAs/AlGaAs quantum square wells. We also discuss various other projects related to the study of topological states and strongly interacting charges: direct testing of the bulk conduction in a developing quantum Hall state using a corbino-disk-like geometry (or "anti-Hall bar"); preliminary results for ultra dilute charges in undoped heterojunction insulated gated field effect transistors; quantum capacitance measurement of the density of states across the vanadium dioxide metal insulator transition; progress towards a scanning capacitance measurement using the tip of an atomic force microscope; and graphene devices for optical detection.

  14. Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti4+) Doping

    Science.gov (United States)

    Wu, Yanfei; Fan, Lele; Liu, Qinghua; Chen, Shi; Huang, Weifeng; Chen, Feihu; Liao, Guangming; Zou, Chongwen; Wu, Ziyu

    2015-01-01

    The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti4+-doped VO2 (TixV1-xO2) system. It was observed that the TC of TixV1-xO2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in TixV1-xO2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials. PMID:25950809

  15. Transit space

    DEFF Research Database (Denmark)

    Raahauge, Kirsten Marie

    2008-01-01

    This article deals with representations of one specific city, Århus, Denmark, especially its central district. The analysis is based on anthropological fieldwork conducted in Skåde Bakker and Fedet, two well-off neighborhoods. The overall purpose of the project is to study perceptions of space...... and the interaction of cultural, social, and spatial organizations, as seen from the point of view of people living in Skåde Bakker and Fedet. The focus is on the city dwellers’ representations of the central district of Århus with specific reference to the concept of transit space. When applied to various Århusian...

  16. Transition region

    International Nuclear Information System (INIS)

    Jordan, C.

    1977-01-01

    The Glossary is designed to be a technical dictionary that will provide solar workers of various specialties, students, other astronomers and theoreticians with concise information on the nature and the properties of phenomena of solar and solar-terrestrial physics. Each term, or group of related terms, is given a concise phenomenological and quantitative description, including the relationship to other phenomena and an interpretation in terms of physical processes. The references are intended to lead the non-specialist reader into the literature. This section deals with: transition region; di-electronic recombination; intersystem or intercombination lines; satellite lines; grazing-incidence optics; and crystal spectrometers. (B.R.H.)

  17. arXiv Gauge Topological Nature of the Superconductor-Insulator Transition

    CERN Document Server

    Diamantini, M.C.; Lukyanchuk, I.; Vinokur, V.M.

    It has long been believed that, at absolute zero, electrons can form only one quantum coherent state, a superconductor. Yet, several two dimensional superconducting systems were found to harbor the superinsulating state with infinite resistance, a mirror image of superconductivity, and a metallic state often referred to as Bose metal, characterized by finite longitudinal and vanishing Hall resistances. The nature of these novel and mysterious quantum coherent states is the subject of intense study.Here, we propose a topological gauge description of the superconductor-insulator transition (SIT) that enables us to identify the underlying mechanism of superinsulation as Polyakov's linear confinement of Cooper pairs via instantons. We find a criterion defining conditions for either a direct SIT or for the SIT via the intermediate Bose metal and demonstrate that this Bose metal phase is a Mott topological insulator in which the Cooper pair-vortex liquid is frozen by Aharonov-Bohm interactions.

  18. Transitional issues

    International Nuclear Information System (INIS)

    1998-01-01

    This discussion paper, the fifth in the series developed at the IPPSO Market Design Conference, addressed the issue of the need to prevent Ontario Hydro from taking unfair advantage of independent producers and other stakeholders through activities and investments in new power generating capacity in the transitional period leading up to deregulation. The need for controls is predicated on the assumption that the short-term actions and investments of Ontario Hydro could seriously compromise the position of independent generators, and that without such controls the level playing field essential to the operation of a competitive market, does not exist. Various actual and potential actions of Ontario Hydro were discussed, all of which point to the need for strict controls over Ontario Hydro exercising its dominant market power in an unfair way. It was recommended that as a minimum, the provincial government should no longer provide guarantees for Ontario Hydro capital projects, and that Ontario Hydro be instructed to defer any investment on new or returning generating capacity until the new market is in place. Limits could also be placed on Ontario Hydro's marketing efforts to enter into contracts during the transition period, and Ontario Hydro and municipal utilities should be required to keep separate accounts of their commercial preparation, and to settle such accounts separate from ratepayer revenue

  19. Correlated effective field theory in transition metal compounds

    International Nuclear Information System (INIS)

    Mukhopadhyay, Subhasis; Chatterjee, Ibha

    2004-01-01

    Mean field theory is good enough to study the physical properties at higher temperatures and in higher dimensions. It explains the critical phenomena in a restricted sense. Near the critical temperatures, when fluctuations become important, it may not give the correct results. Similarly in low dimensions, the correlations become important and the mean field theory seems to be inadequate to explain the physical phenomena. At low-temperatures too, the quantum correlations become important and these effects are to be treated in an appropriate way. In 1974, Prof. M.E. Lines of Bell Laboratories, developed a theory which goes beyond the mean field theory and is known as the correlated effective field (CEF) theory. It takes into account the fluctuations in a semiempirical way. Lines and his collaborators used this theory to explain the short-range correlations and their anisotropy in the paramagnetic phase. Later Suzuki et al., Chatterjee and Desai, Mukhopadhyay and Chatterjee applied this theory to the magnetically ordered phase and a tremendous success of the theory has been found in real systems. The success of the CEF theory is discussed in this review. In order to highlight the success of this theory, earlier effective field theories and their improvements over mean field theories e.g., Bethe-Peierls-Weiss method, reaction field approximation, etc., are also discussed in this review for completeness. The beauty of the CEF theory is that it is mean field-like, but captures the essential physics of real systems to a great extent. However, this is a weak correlated theory and as a result is inappropriate for the metallic phase when strong correlations become important. In recent times, transition metal oxides become important due to the discovery of the high-temperature superconductivity and the colossal magnetoresistance phenomena. These oxides seem to be Mott insulators and undergo an insulator to metal transition by applying magnetic field, pressure and by changing

  20. Energy transition

    International Nuclear Information System (INIS)

    Anon.

    2013-01-01

    The yearly environmental conference will hold on September 2013 to evaluate the negotiations led at the national and local levels for december 2012. The government will have then to decide of an energy programming bill which will be submitted to the Parliament at the beginning of the year 2014. 30 main propositions have emerged of the decentralised debates. One of them is the ecological taxation which raise the question of the gas oil and petrol taxation. The current environmental taxes are for almost three quarters of them taxes on energy consumptions and mainly on fossil energies. The Economic, Social and Environmental Council, gives his opinion on the way to find resources to ensure the ecological and energy transition while reducing the public deficit of the State. (O.M.)

  1. Electronic properties of high Tc superconductors. Propiedades electronicas de los superconductores de alta temperatura critica

    Energy Technology Data Exchange (ETDEWEB)

    Rojo, A G

    1989-01-01

    Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author).

  2. Electronic properties of high Tc superconductors

    International Nuclear Information System (INIS)

    Rojo, A.G.

    1989-01-01

    Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author) [es

  3. Interaction effects and quantum phase transitions in topological insulators

    International Nuclear Information System (INIS)

    Varney, Christopher N.; Sun Kai; Galitski, Victor; Rigol, Marcos

    2010-01-01

    We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting Haldane model on a honeycomb lattice with known topological properties and demonstrate that these properties are already evident in small clusters. Next, we consider interacting fermions by introducing repulsive nearest-neighbor interactions. A first-order quantum phase transition was discovered at finite interaction strength between the topological band insulator and a topologically trivial Mott insulating phase by use of the fidelity metric and the charge-density-wave structure factor. We construct the phase diagram at T=0 as a function of the interaction strength and the complex phase for the next-nearest-neighbor hoppings. Finally, we consider the Haldane model with interacting hard-core bosons, where no evidence for a topological phase is observed. An important general conclusion of our work is that despite the intrinsic nonlocality of topological phases their key topological properties manifest themselves already in small systems and therefore can be studied numerically via exact diagonalization and observed experimentally, e.g., with trapped ions and cold atoms in optical lattices.

  4. A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

    Science.gov (United States)

    Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

    2017-01-01

    Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal–insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices. PMID:28773222

  5. Energy barriers between metastable states in first-order quantum phase transitions

    Science.gov (United States)

    Wald, Sascha; Timpanaro, André M.; Cormick, Cecilia; Landi, Gabriel T.

    2018-02-01

    A system of neutral atoms trapped in an optical lattice and dispersively coupled to the field of an optical cavity can realize a variation of the Bose-Hubbard model with infinite-range interactions. This model exhibits a first-order quantum phase transition between a Mott insulator and a charge density wave, with spontaneous symmetry breaking between even and odd sites, as was recently observed experimentally [Landig et al., Nature (London) 532, 476 (2016), 10.1038/nature17409]. In the present paper, we approach the analysis of this transition using a variational model which allows us to establish the notion of an energy barrier separating the two phases. Using a discrete WKB method, we then show that the local tunneling of atoms between adjacent sites lowers this energy barrier and hence facilitates the transition. Within our simplified description, we are thus able to augment the phase diagram of the model with information concerning the height of the barrier separating the metastable minima from the global minimum in each phase, which is an essential aspect for the understanding of the reconfiguration dynamics induced by a quench across a quantum critical point.

  6. Optical study on doped polyaniline composite films

    International Nuclear Information System (INIS)

    Li, G; Zheng, P; Wang, N L; Long, Y Z; Chen, Z J; Li, J C; Wan, M X

    2004-01-01

    Localization driven by disorder has a strong influence on the conducting properties of conducting polymers. Some authors hold the opinion that disorder in the material is homogeneous and that the conducting polymer is a disordered metal close to the Anderson-Mott metal-insulator (MI) transition, while others treat the disorder as inhomogeneous and have the opinion that conducting polymers are a composite of ordered metallic regions and disordered insulating regions. The morphology of conducting polymers is an important factor that has an influence on the type and extent of disorder. Different protonic acids used as dopants and moisture have influence on the polymer chain arrangement and interchain interactions. We performed optical reflectance measurements on several PANI-CSA/PANI-DBSA composite films with different dopant ratios and moisture contents. Optical conductivity and the real part of the dielectric function are calculated by Kramers-Kronig (KK) relations. σ 1 (ο) and ε 1 (ο) deviate from the simple Drude model in the low frequency range and the tendencies of the three sample are different and non-monotonic. The localization modified Drude model (LMD) in the framework of the Anderson-Mott theory cannot give a good fit to the experimental data. By introducing the distribution of relaxation time into the LMD, reasonable fits for all three samples are obtained. This result supports the inhomogeneous picture

  7. Noise Spectroscopy in Strongly Correlated Oxides

    Science.gov (United States)

    Alsaqqa, Ali M.

    Strongly correlated materials are an interesting class of materials, thanks to the novel electronic and magnetic phenomena they exhibit as a result of the interplay of various degrees of freedom. This gives rise to an array of potential applications, from Mott-FET to magnetic storage. Many experimental probes have been used to study phase transitions in strongly correlated oxides. Among these, resistance noise spectroscopy, together with conventional transport measurements, provides a unique viewpoint to understand the microscopic dynamics near the phase transitions in these oxides. In this thesis, utilizing noise spectroscopy and transport measurements, four different strongly correlated materials were studied: (1) neodymium nickel oxide (NdNiO 3) ultrathin films, (2) vanadium dioxide (VO2) microribbons, (3) copper vanadium bronze (CuxV2O 5) microribbons and (4) niobium triselenide (NbSe3) microribbons. Ultra thin films of rare-earth nickelates exhibit several temperature-driven phase transitions. In this thesis, we studied the metal-insulator and Neel transitions in a series of NdNiO3 films with different lattice mismatches. Upon colling down, the metal-insulator phase transition is accompanied by a structural (orthorohombic to monoclinic) and magnetic (paramagnetic to antiferromagnetic) transitions as well, making the problem more interesting and complex at the same time. The noise is of the 1/f type and is Gaussian in the high temperature phase, however deviations are seen in the low temperature phases. Below the metal-insulator transition, noise magnitude increases by orders of magnitude: a sign of inhomogeneous electrical conduction as result of phase separation. This is further assured by the non-Gaussian noise signature. At very low temperatures (T switches between Gaussian and non-Gaussian over several hours, possibly arising from dynamically competing ground states. VO2 is one of the most widely studied strongly correlated oxides and is important from the

  8. Biodiesel Mass Transit Demonstration

    Science.gov (United States)

    2010-04-01

    The Biodiesel Mass Transit Demonstration report is intended for mass transit decision makers and fleet managers considering biodiesel use. This is the final report for the demonstration project implemented by the National Biodiesel Board under a gran...

  9. Public Transit Stations

    Data.gov (United States)

    Department of Homeland Security — fixed rail transit stations within the Continental United States, Alaska, Hawaii, the District of Columbia, and Puerto Rico. The modes of transit that are serviced...

  10. Quantum phase transitions

    International Nuclear Information System (INIS)

    Sachdev, S.

    1999-01-01

    Phase transitions are normally associated with changes of temperature but a new type of transition - caused by quantum fluctuations near absolute zero - is possible, and can tell us more about the properties of a wide range of systems in condensed-matter physics. Nature abounds with phase transitions. The boiling and freezing of water are everyday examples of phase transitions, as are more exotic processes such as superconductivity and superfluidity. The universe itself is thought to have passed through several phase transitions as the high-temperature plasma formed by the big bang cooled to form the world as we know it today. Phase transitions are traditionally classified as first or second order. In first-order transitions the two phases co-exist at the transition temperature - e.g. ice and water at 0 deg., or water and steam at 100 deg. In second-order transitions the two phases do not co-exist. In the last decade, attention has focused on phase transitions that are qualitatively different from the examples noted above: these are quantum phase transitions and they occur only at the absolute zero of temperature. The transition takes place at the ''quantum critical'' value of some other parameter such as pressure, composition or magnetic field strength. A quantum phase transition takes place when co-operative ordering of the system disappears, but this loss of order is driven solely by the quantum fluctuations demanded by Heisenberg's uncertainty principle. The physical properties of these quantum fluctuations are quite distinct from those of the thermal fluctuations responsible for traditional, finite-temperature phase transitions. In particular, the quantum system is described by a complex-valued wavefunction, and the dynamics of its phase near the quantum critical point requires novel theories that have no analogue in the traditional framework of phase transitions. In this article the author describes the history of quantum phase transitions. (UK)

  11. Cosmological phase transitions

    International Nuclear Information System (INIS)

    Kolb, E.W.

    1993-10-01

    If modern ideas about the role of spontaneous symmetry breaking in fundamental physics are correct, then the Universe should have undergone a series of phase transitions early in its history. The study of cosmological phase transitions has become an important aspect of early-Universe cosmology. In this lecture I review some very recent work on three aspects of phase transitions: the electroweak transition, texture, and axions

  12. Modeling for transition management

    NARCIS (Netherlands)

    Chappin, E.J.L.; Dijkema, G.P.J.

    2015-01-01

    A framework for the modeling and simulation of transitions is presented. A transition, “substantial change in the state of a socio-technical system”, typically unfolds over a long timespan. We therefore suggest to use simulation to inform transition managers on the effect of their decisions.

  13. Modeling for Transition Management

    NARCIS (Netherlands)

    Chappin, Emile J L; Dijkema, Gerard P.J.

    2015-01-01

    A framework for the modeling and simulation of transitions is presented. A transition, “substantial change in the state of a socio-technical system”, typically unfolds over a long timespan. We therefore suggest to use simulation to inform transition managers on the effect of their decisions.

  14. Microwave stability at transition

    International Nuclear Information System (INIS)

    Holt, J.A.; Colestock, P.L.

    1995-05-01

    The question of microwave stability at transition is revisited using a Vlasov approach retaining higher order terms in the particle dynamics near the transition energy. A dispersion relation is derived which can be solved numerically for the complex frequency in terms of the longitudinal impedance and other beam parameters. Stability near transition is examined and compared with simulation results

  15. Transit manager's handbook.

    Science.gov (United States)

    2011-09-01

    This handbook provides an overview of public transit in Iowa and how to do business with the Iowa Department of Transportation (Iowa DOT) Office of Public Transit (OPT). It is intended to be a tool to assist transit managers navigate through the many...

  16. Transit labor relations guide

    Science.gov (United States)

    2001-09-01

    This report is designed as a guide for those involved in labor relations in the transit industry. It begins with a history of transit labor relations. The economic, political, and legal environment of transit relations is then discussed. A section fo...

  17. Transition: Preschool to Kindergarten

    Science.gov (United States)

    Arizona Department of Education, 2007

    2007-01-01

    Transition is movement or change without interruption. It should be a smooth flow from one place or condition to another. While the transition plan for a student receiving special education services is designed to prepare him or her for life after high school, transition can start when a child enters preschool. The second of six distinct stages of…

  18. Theoretical formulation of optical conductivity of La0.7Ca0.3MnO3 exhibiting paramagnetic insulator - ferromagnetic metal transition

    Science.gov (United States)

    Satiawati, L.; Majidi, M. A.

    2017-07-01

    A theory of high-energy optical conductivity of La0.7Ca0.3MnO3 has been proposed previously. The proposed theory works to explain the temperature-dependence of the optical conductivity for the photon energy region above ˜0.5 eV for up to ˜22 eV, but fails to capture the correct physics close to the dc limit in which metal-insulator transition occurs. The missing physics at the low energy has been acknowledged as mainly due to not incorporating phonon degree of freedom and electron-phonon interactions. In this study, we aim to complete the above theory by proposing a more complete Hamiltonian incorporating additional terms such as crystal field, two modes of Jahn-Teller vibrations, and coupling between electrons and the two Jahn-Teller vibrational modes. We solve the model by means of dynamical mean-field theory. At this stage, we aim to derive the analytical formulae involved in the calculation, and formulate the algorithmic implementation for the self-consistent calculation process. Our final goal is to compute the density of states and the optical conductivity for the complete photon energy range from 0 to 22 eV at various temperatures, and compare them with the experimental data. We expect that the improved model preserves the correct temperature-dependent physics at high photon energies, as already captured by the previous model, while it would also reveal ferromagnetic metal - paramagnetic insulator transition at the dc limit.

  19. Wet-etching induced abnormal phase transition in highly strained VO{sub 2}/TiO{sub 2} (001) epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Hui; Chen, Shi; Chen, Yuliang; Luo, Zhenlin; Zhou, Jingtian; Zheng, Xusheng; Wang, Liangxin; Li, Bowen; Zou, Chongwen [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei (China)

    2018-01-15

    The metal-insulator transition (MIT) behavior in vanadium dioxide (VO{sub 2}) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO{sub 2}/TiO{sub 2} (001) system, there exists a considerable strain in ultra-thin VO{sub 2} thin film, which shows a lower T{sub c} value close to room temperature. As the VO{sub 2} epitaxial film grows thicker layer-by-layer along the ''bottom-up'' route, the strain will be gradually relaxed and T{sub c} will increase as well, until the MIT behavior becomes the same as that of bulk material with a T{sub c} of about 68 C. Whereas, in this study, we find that the VO{sub 2}/TiO{sub 2} (001) film thinned by ''top-down'' wet-etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO{sub 2} film is etched up to several nanometers, the MIT persists, and T{sub c} will increase up to that of bulk material, showing the trend to a stress-free ultra-thin VO{sub 2} film. The current findings demonstrate a facial chemical-etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO{sub 2} films, which can also be applied to other strained oxide films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Quantum phase transitions of light in a dissipative Dicke-Bose-Hubbard model

    Science.gov (United States)

    Wu, Ren-Cun; Tan, Lei; Zhang, Wen-Xuan; Liu, Wu-Ming

    2017-09-01

    The impact that the environment has on the quantum phase transition of light in the Dicke-Bose-Hubbard model is investigated. Based on the quasibosonic approach, mean-field theory, and perturbation theory, the formulation of the Hamiltonian, the eigenenergies, and the superfluid order parameter are obtained analytically. Compared with the ideal cases, the order parameter of the system evolves with time as the photons naturally decay in their environment. When the system starts with the superfluid state, the dissipation makes the photons more likely to localize, and a greater hopping energy of photons is required to restore the long-range phase coherence of the localized state of the system. Furthermore, the Mott lobes depend crucially on the numbers of atoms and photons (which disappear) of each site, and the system tends to be classical with the number of atoms increasing; however, the atomic number is far lower than that expected under ideal circumstances. As there is an inevitable interaction between the coupled-cavity array and its surrounding environment in the actual experiments, the system is intrinsically dissipative. The results obtained here provide a more realistic image for characterizing the dissipative nature of quantum phase transitions in lossy platforms, which will offer valuable insight into quantum simulation of a dissipative system and which are helpful in guiding experimentalists in open quantum systems.