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Sample records for mos electron emitters

  1. Electron Emission from Ultra-Large Area MOS Electron Emitters

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2009-01-01

    Ultralarge metal-oxide-semiconductor (MOS) devices with an active oxide area of 1 cm2 have been fabricated for use as electron emitters. The MOS structures consist of a Si substrate, a SiO2 tunnel barrier (~5 nm), a Ti wetting layer (3–10 Å), and a Au top layer (5–60 nm). Electron emission from...... layer is varied from 3 to 10 Å which changes the emission efficiency by more than one order of magnitude. The apparent mean free path of ~5 eV electrons in Au is found to be 52 Å. Deposition of Cs on the Au film increased the electron emission efficiency to 4.3% at 4 V by lowering the work function....... Electron emission under high pressures (up to 2 bars) of Ar was observed. ©2009 American Vacuum Society...

  2. Electron emission from MOS electron emitters with clean and cesium covered gold surface

    DEFF Research Database (Denmark)

    Nielsen, Gunver; Thomsen, Lasse Bjørchmar; Johansson, Martin

    2009-01-01

    MOS (metal-oxide-semiconductor) electron emitters consisting of a Si substrate, a SiO2 tunnel barrier and a Ti (1 nm)/Au(7 nm) top-electrode, with an active area of 1 cm(2) have been produced and studied with surface science techniques under UHV (ultra high vacuum) conditions and their emission...... characteristics have been investigated. It is known, that deposition of an alkali metal on the emitting surface lowers the work function and increases the emission efficiency. For increasing Cs coverages the surface has been characterized by X-ray Photoelectron Spectroscopy (XPS), Ion Scattering Spectroscopy (ISS...

  3. Ultrathin MoS2 and WS2 layers on silver nano-tips as electron emitters

    Science.gov (United States)

    Loh, Tamie A. J.; Tanemura, Masaki; Chua, Daniel H. C.

    2016-09-01

    2-dimensional (2D) inorganic analogues of graphene such as MoS2 and WS2 present interesting opportunities for field emission technology due to their high aspect ratio and good electrical conductivity. However, research on 2D MoS2 and WS2 as potential field emitters remains largely undeveloped compared to graphene. Herein, we present an approach to directly fabricate ultrathin MoS2 and WS2 onto Ag nano-tips using pulsed laser deposition at low temperatures of 450-500 °C. In addition to providing a layer of chemical and mechanical protection for the Ag nano-tips, the growth of ultrathin MoS2 and WS2 layers on Ag led to enhanced emission properties over that of pristine nano-tips due to a reduction of the effective barrier height arising from charge injection from Ag to the overlying MoS2 or WS2. For WS2 on Ag nano-tips, the phasic mixture was also an important factor influencing the field emission performance. The presence of 1T-WS2 at the metal-WS2 interface in a hybrid film of 2H/1T-WS2 leads to improvement in the field emission capabilities as compared to pure 2H-WS2 on Ag nano-tips.

  4. Electron Emitters

    National Research Council Canada - National Science Library

    Tzeng, Yonhua

    2002-01-01

    When two carbon-nanotube coated electrodes are placed at a small distance from each other, electron emission from carbon nanotubes allows a DC or AC electrical current to flow between these two electrodes...

  5. Low emittance electron storage rings

    Science.gov (United States)

    Levichev, E. B.

    2018-01-01

    Low-emittance electron (positron) beams are essential for synchrotron light sources, linear collider damping rings, and circular Crab Waist colliders. In this review, the principles and methods of emittance minimization are discussed, prospects for developing relativistic electron storage rings with small beam phase volume are assessed, and problems related to emittance minimization are examined together with their possible solutions. The special features and engineering implementation aspects of various facilities are briefly reviewed.

  6. Diamondoid monolayers as electron emitters

    Science.gov (United States)

    Yang, Wanli [El Cerrito, CA; Fabbri, Jason D [San Francisco, CA; Melosh, Nicholas A [Menlo Park, CA; Hussain, Zahid [Orinda, CA; Shen, Zhi-Xun [Stanford, CA

    2012-04-10

    Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

  7. A device for electron gun emittance measurement

    International Nuclear Information System (INIS)

    Aune, B.; Corveller, P.; Jablonka, M.; Joly, J.M.

    1985-05-01

    In order to improve the final emittance of the beam delivered by the ALS electron linac a new gun is going to be installed. To measure its emittance and evaluate the contribution of different factors to emittance growth we have developed an emittance measurement device. We describe the experimental and mathematical procedure we have followed, and give some results of measurements

  8. High current plasma electron emitter

    International Nuclear Information System (INIS)

    Fiksel, G.; Almagri, A.F.; Craig, D.

    1995-07-01

    A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current, small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications

  9. Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

    International Nuclear Information System (INIS)

    Vexler, M I; Tyaginov, S E; Shulekin, A F

    2005-01-01

    The value of m h = 0.33 m 0 has been experimentally obtained for hole effective mass in a tunnel-thin (2-3 nm) SiO 2 film. The use of this value ensures the adequate modelling of a direct-tunnelling hole current in MOS devices. For the first time, in order to determine m h , the characteristics of a MOS tunnel emitter transistor have been mathematically processed, that allows for the precise estimation of the effective oxide thickness, as the electron effective mass in SiO 2 is independently known from the literature. The formulae for simulation of currents in a tunnel MOS structure are listed along with the necessary parameter values

  10. Low emittance thermionic electron guns

    International Nuclear Information System (INIS)

    Herrmannsfeldt, W.B.

    1989-01-01

    The author discusses self-field effects and external field effects for electron guns. He also discusses designs of electron guns and their uses in electron cooling systems and as an injector for electrostatic free electron lasers. He closes by looking at electron guns for linear accelerators. 20 references, 3 figures

  11. Electron microscopy studies on MoS2 nanocrystals

    DEFF Research Database (Denmark)

    Hansen, Lars Pilsgaard

    Industrial-style MoS2-based hydrotreating catalysts are studied using electron microscopy. The MoS2 nanostructures are imaged with single-atom sensitivity to reveal the catalytically important edge structures. Furthermore, the in-situ formation of MoS2 crystals is imaged for the first time....

  12. Development of a new electron gun pulser by using high-speed MOS-FET's

    International Nuclear Information System (INIS)

    Suzuki, Ryoichi; Mikado, Tomohisa; Ohgaki, Hideaki; Chiwaki, Mitsukuni; Yamada, Kawakatsu; Sei, Norihiro; Sugiyama, Suguru; Noguchi, Tsutomu; Yamazaki, Tetsuo

    1993-01-01

    A new pulser for a low-emittance electron gun of the ETL linac has been developed by using high-speed MOS-FET's. The pulser can produce pulses of variable pulse width (5 ns - 4 μs) and of variable pulse height. Furthermore, the pulser can be operated with burst mode (100 ns period, more than 20 cycles) for single bunch injection to electron storage rings. (author)

  13. Electron emitter pulsed-type cylindrical IEC

    International Nuclear Information System (INIS)

    Miley, G.H.; Gu, Y.; Stubbers, R.; Zich, R.; Anderl, R.; Hartwell, J.

    1997-01-01

    A cylindrical version of the single grid Inertial Electrostatic Confinement (IEC) device (termed the C-device) has been developed for use as a 2.5-MeV D-D fusion neutron source for neutron activation analysis. The C-device employs a hollow-tube type cathode with similar anodes backed up by ''reflector'' dishes. The resulting discharge differs from a conventional hollow cathode discharge, by creating an explicit ion beam which is ''pinched'' in the cathode region. Resulting fusion reactions generate ∼10 6 neutron/s. A pulsed version is under development for applications requiring higher fluxes. Several pulsing techniques are under study, including an electron emitter (e-emitter) assisted discharge in a thorated tungsten wire emitter located behind a slotted area in the reflector dishes. Pulsing is initiated after establishing a low power steady-state discharge by pulsing the e-emitter current using a capacitor switch type circuit. The resulting electron jet, coupled with the discharge by the biased slot array, creates a strong pulse in the pinched ion beam. The pulse length/repetition rate are controlled by the e-emitter pulse circuit. Typical parameters in present studies are ∼30micros, 10Hz and 1-amp ion current. Corresponding neutron measurements are an In-foil type activation counter for time averaged rates. Results for a wide variety of operating conditions are presented

  14. Modular low-voltage electron emitters

    International Nuclear Information System (INIS)

    Berejka, Anthony J.

    2005-01-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates

  15. Modular low-voltage electron emitters

    Science.gov (United States)

    Berejka, Anthony J.

    2005-12-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates.

  16. Plasma treatment for producing electron emitters

    Science.gov (United States)

    Coates, Don Mayo; Walter, Kevin Carl

    2001-01-01

    Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

  17. Low emittance lattices for electron storage rings revisited

    International Nuclear Information System (INIS)

    Trbojevic, D.; Courant, E.

    1994-01-01

    Conditions for the lowest possible emittance of the lattice for electron storage rings are obtained by a simplified analytical approach. Examples of electron storage lattices with minimum emittances are presented. A simple graphical presentation in the normalized dispersion space (Floquet's transformation) is used to illustrate the conditions and results

  18. Evaluations of carbon nanotube field emitters for electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Nakahara, Hitoshi, E-mail: nakahara@nagoya-u.jp [Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi [Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2009-11-30

    Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I-V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6x10{sup 9} A/m{sup 2} sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

  19. Evaluations of carbon nanotube field emitters for electron microscopy

    Science.gov (United States)

    Nakahara, Hitoshi; Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi

    2009-11-01

    Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I- V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6×109 A/m 2 sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

  20. Emittance measurements of the CLIO electron beam

    Science.gov (United States)

    Chaput, R.; Devanz, G.; Joly, P.; Kergosien, B.; Lesrel, J.

    1997-02-01

    We have designed a setup to measure the transverse emittance at the CLIO accelerator exit, based on the "3 gradients" method. The beam transverse size is measured simply by scanning it with a steering coil across a fixed jaw and recording the transmitted current, at various quadrupole strengths. A code then performs a complete calculation of the emittance using the transfer matrix of the quadrupole instead of the usual classical lens approximation. We have studied the influence of various parameters on the emittance: Magnetic field on the e-gun and the peak current. We have also improved a little the emittance by replacing a mismatched pipe between the buncher and accelerating section to avoid wake-field effects; The resulting improvements of the emittance have led to an increase in the FEL emitted power.

  1. Innovative energy efficient low-voltage electron beam emitters

    International Nuclear Information System (INIS)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-01-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates

  2. Innovative energy efficient low-voltage electron beam emitters

    Science.gov (United States)

    Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

    2002-03-01

    Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates.

  3. Device for the radiation centering at electron emitters

    International Nuclear Information System (INIS)

    Panzer, S.; Ardenne, T. von; Jessat, K.; Bahr, G.

    1985-01-01

    The invention has been directed at a device for a simplified and reliable centering of electron beams at electron emitters in particular for welding and thermal surface modifications. The electron beam has been focussed relatively to an electron-optical lens. A movable masked electron detector has been arranged at the electron beam deflection plane. The electron detector is connected with an electronic data evaluation equipment

  4. A compact electron gun using field emitter array

    International Nuclear Information System (INIS)

    Asakawa, M.R.; Ikeda, A.; Miyabe, N.; Yamaguchi, S.; Kusaba, M.; Tsunawaki, Y.

    2008-01-01

    A compact electron gun using field emitter array has been developed. With a simple triode configuration consisting of FEA, mid-electrode and anode electrode, the electron gun produces a parallel beam with a diameter of 0.5 mm. This electron gun is applicable for compact radiation sources such as Cherenkov free-electron lasers

  5. Single-layer MoS2 electronics.

    Science.gov (United States)

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

  6. Modified theoretical minimum emittance lattice for an electron storage ring with extreme-low emittance

    Directory of Open Access Journals (Sweden)

    Yi Jiao

    2011-05-01

    Full Text Available In the continuing efforts to reduce the beam emittance of an electron storage ring composed of theoretical minimum emittance (TME lattice, down to a level of several tens of picometers, nonlinear dynamics grows to be a great challenge to the performance of the storage ring because of the strong sextupoles needed to compensate for its large global natural chomaticities coupled with its small average dispersion function. To help in dealing with the challenge of nonlinear optimization, we propose a novel variation of theoretical minimum emittance (TME lattice, named as “modified-TME” lattice, with minimal emittance about 3 times of the exact theoretical minimum, while with more compact layout, lower phase advance per cell, smaller natural chromaticities, and more relaxed optical functions than that in a TME cell, by using horizontally defocusing quadrupole closer to the dipole or simply combined-function dipole with horizontally defocusing gradient. We present approximate scaling formulas to describe the relationships of the design parameters in a modified-TME cell. The applications of modified-TME lattice in the PEP-X storage ring design are illustrated and the proposed lattice appears a good candidate for synchrotron radiation light source with extremely low emittance.

  7. Industrial application of electron sources with plasma emitters

    CERN Document Server

    Belyuk, S I; Rempe, N G

    2001-01-01

    Paper contains a description, operation, design and parameters of electron sources with plasma emitters. One presents examples of application of these sources as part of automated electron-beam welding lines. Paper describes application of such sources for electron-beam deposition of composite powders. Electron-beam deposition is used to rebuild worn out part and to increase strength of new parts of machines and tools. Paper presents some examples of rebuilding part and the advantages gained in this case

  8. Emittance measurement for high-brightness electron guns

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kurihara, T.; Sato, I.; Asami, A.; Yamazaki, Y.; Otani, S.; Ishizawa, Y.

    1992-01-01

    An emittance measurement system based on a high-precision pepper-pot technique has been developed for electron guns with low emittance of around πmm-mrad. Electron guns with a 1 mmφ cathode, the material of which is impregnated tungsten or single-crystal lanthanum hexaboride (La 1-x Ce x )B 6 , have been developed. The performance has been evaluated by putting stress on cathode roughness, which gives rise to an angular divergence, according to the precise emittance measurement system. A new type of cathode holder, which is a modified version of the so called Vogel type, was developed and the beam uniformity has been improved. (Author) 5 figs., tab., 9 refs

  9. Ultralarge area MOS tunnel devices for electron emission

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  10. Auger electron emitters: Insights gained from in vitro experiments

    International Nuclear Information System (INIS)

    Makrigiorgos, G.; Adelstein, S.J.; Kassis, A.I.

    1990-01-01

    This paper outlines the evolution of the current rationale for research into the biological effects of tissue-incorporated Auger electron emitters. The first section is a brief review of the research conducted by several groups in the last fifteen years. The second section describes the in vitro model used in our studies, dosimetric calculations, experimental techniques and recent findings. The third section focuses on the use of Auger electron emitters as in vitro microprobes for the investigation of the radiosensitivity of distinct subcellular components. Examination of the biological effects of the Auger electron emitter 125 I located in different cellular compartments of a single cell line (V 79 hamster lung fibroblast) verifies that DNA is the critical cell structure for radiation damage and that the sensitive sites are of nanometer dimensions. The data from incorporation of several Auger electron emitters at the same location within DNA suggest that there are no saturation effects from the decay of these isotopes (i.e. all the emitted energy is biologically effective) and provide some insight into which of the numerous physical mechanisms accompanying the Auger decay are most important in causing cell damage. Finally the implications of Auger electron emission for radiotherapy and radiation protection in diagnostic nuclear medicine are detailed and further research possibilities are suggested. (orig.)

  11. Nanodiamond composite as a material for cold electron emitters

    International Nuclear Information System (INIS)

    Arkhipov, A V; Sominski, G G; Uvarov, A A; Gordeev, S K; Korchagina, S B

    2008-01-01

    Characteristics of field-induced electron emission were investigated for one of newly designed all-carbon materials - nanodiamond composite (NDC). The composite is comprised by 4-6 nm diamond grains covered with 0.2-1 nm-thick graphite-like shells that merge at grain junctions and determine such properties as mechanical strength and high electric conductivity. Large number of uniformly distributed sp 3 -sp 2 interfaces allowed to expect enhanced electron emission in electric field. Combination of these features makes NDC a promising material for cold electron emitters in various applications. Experimental testing confirmed high efficiency of electron emission from NDC. In comparison with previousely tested forms of nanocarbon, NDC emitters demonstrated better stabily and tolerance to performance conditions. Unusual activation scenarios and thermal dependencies of emission characteristics observed in experiments with NDC can add new background for explanation of facilitated electron emission from nanocarbons with relatively 'smooth' surface morphology

  12. Nanodiamond composite as a material for cold electron emitters

    Energy Technology Data Exchange (ETDEWEB)

    Arkhipov, A V; Sominski, G G; Uvarov, A A [St.Petersburg State Polytechnic University, 29 Politchnicheskaya, St.Petersburg, 195251 (Russian Federation); Gordeev, S K; Korchagina, S B [FSUE ' Central Research Institute for Materials' , 8 Paradnaya Street, St.Petersburg, 191014 (Russian Federation)], E-mail: arkhipov@rphf.spbstu.ru

    2008-03-15

    Characteristics of field-induced electron emission were investigated for one of newly designed all-carbon materials - nanodiamond composite (NDC). The composite is comprised by 4-6 nm diamond grains covered with 0.2-1 nm-thick graphite-like shells that merge at grain junctions and determine such properties as mechanical strength and high electric conductivity. Large number of uniformly distributed sp{sup 3}-sp{sup 2} interfaces allowed to expect enhanced electron emission in electric field. Combination of these features makes NDC a promising material for cold electron emitters in various applications. Experimental testing confirmed high efficiency of electron emission from NDC. In comparison with previousely tested forms of nanocarbon, NDC emitters demonstrated better stabily and tolerance to performance conditions. Unusual activation scenarios and thermal dependencies of emission characteristics observed in experiments with NDC can add new background for explanation of facilitated electron emission from nanocarbons with relatively 'smooth' surface morphology.

  13. Emittance growth in laser-driven RF electron guns

    International Nuclear Information System (INIS)

    Kim, K.J.

    1989-01-01

    A simple analysis for the evolution of the electron-beam phase space distribution in laser-driven rf guns is presented. In particular, formulas are derived for the transverse and longitudinal emittances at the exit of the gun. The results are compared and found to agree well with those from simulation. (Author). 9 refs.; 4 figs

  14. RF emittance in a low energy electron linear accelerator

    Science.gov (United States)

    Sanaye Hajari, Sh.; Haghtalab, S.; Shaker, H.; Kelisani, M. Dayyani

    2018-04-01

    Transverse beam dynamics of an 8 MeV low current (10 mA) S-band traveling wave electron linear accelerator has been studied and optimized. The main issue is to limit the beam emittance, mainly induced by the transverse RF forces. The linac is being constructed at Institute for Research in Fundamental Science (IPM), Tehran Iran Labeled as Iran's First Linac, nearly all components of this accelerator are designed and constructed within the country. This paper discusses the RF coupler induced field asymmetry and the corresponding emittance at different focusing levels, introduces a detailed beam dynamics design of a solenoid focusing channel aiming to reduce the emittance growth and studies the solenoid misalignment tolerances. In addition it has been demonstrated that a prebuncher cavity with appropriate parameters can help improving the beam quality in the transverse plane.

  15. Emittance Measurements from a Laser Driven Electron Injector

    Energy Technology Data Exchange (ETDEWEB)

    Reis, David A

    2003-07-28

    The Gun Test Facility (GTF) at the Stanford Linear Accelerator Center was constructed to develop an appropriate electron beam suitable for driving a short wavelength free electron laser (FEL) such as the proposed Linac Coherent Light Source (LCLS). For operation at a wavelength of 1.5 {angstrom}, the LCLS requires an electron injector that can produce an electron beam with approximately 1 {pi} mm-mrad normalized rms emittance with at least 1 nC of charge in a 10 ps or shorter bunch. The GTF consists of a photocathode rf gun, emittance-compensation solenoid, 3 m linear accelerator (linac), drive laser, and diagnostics to measure the beam. The rf gun is a symmetrized 1.6 cell, s-band high gradient, room temperature, photocathode structure. Simulations show that this gun when driven by a temporally and spatially shaped drive laser, appropriately focused with the solenoid, and further accelerated in linac can produce a beam that meets the LCLS requirements. This thesis describes the initial characterization of the laser and electron beam at the GTF. A convolved measurement of the relative timing between the laser and the rf phase in the gun shows that the jitter is less than 2.5 ps rms. Emittance measurements of the electron beam at 35 MeV are reported as a function of the (Gaussian) pulse length and transverse profile of the laser as well as the charge of the electron beam at constant phase and gradient in both the gun and linac. At 1 nC the emittance was found to be {approx} 13 {pi} mm-mrad for 5 ps and 8 ps long laser pulses. At 0.5 nC the measured emittance decreased approximately 20% in the 5 ps case and 40% in the 8 ps case. These measurements are between 40-80% higher than simulations for similar experimental conditions. In addition, the thermal emittance of the electron beam was measured to be 0.5 {pi} mm-mrad.

  16. Electron beam emittance monitor for the SSC

    International Nuclear Information System (INIS)

    Tsyganov, E.; Meinke, R.; Nexsen, W.; Kauffmann, S.; Zinchenko, A.; Taratin, A.

    1993-05-01

    A nondestructive beam profile monitor for the Superconducting Super Collider (SSC) is presented using as a probe a low-energy electron beam interacting with the proton bunch charge. Results using a full Monte Carlo simulation code look promising for the transverse and longitudinal beam profile measurements

  17. Electron Cloud at Low Emittance in CesrTA

    CERN Document Server

    Palmer, Mark; Billing, Michael; Calvey, Joseph; Conolly, Christopher; Crittenden, James; Dobbins, John; Dugan, Gerald; Eggert, Nicholas; Fontes, Ernest; Forster, Michael; Gallagher, Richard; Gray, Steven; Greenwald, Shlomo; Hartill, Donald; Hopkins, Walter; Kreinick, David; Kreis, Benjamin; Leong, Zhidong; Li, Yulin; Liu, Xianghong; Livezey, Jesse; Lyndaker, Aaron; Makita, Junki; McDonald, Michael; Medjidzade, Valeri; Meller, Robert; O'Connell, Tim; Peck, Stuart; Peterson, Daniel; Ramirez, Gabriel; Rendina, Matthew; Revesz, Peter; Rider, Nate; Rice, David; Rubin, David; Sagan, David; Savino, James; Schwartz, Robert; Seeley, Robert; Sexton, James; Shanks, James; Sikora, John; Smith, Eric; Strohman, Charles; Williams, Heather; Antoniou, Fanouria; Calatroni, Sergio; Gasior, Marek; Jones, Owain Rhodri; Papaphilippou, Yannis; Pfingstner, Juergen; Rumolo, Giovanni; Schmickler, Hermann; Taborelli, Mauro; Asner, David; Boon, Laura; Garfinkel, Arthur; Byrd, John; Celata, Christine; Corlett, John; De Santis, Stefano; Furman, Miguel; Jackson, Alan; Kraft, Rick; Munson, Dawn; Penn, Gregory; Plate, David; Venturini, Marco; Carlson, Benjamin; Demma, Theo; Dowd, Rohan; Flanagan, John; Jain, Puneet; Kanazawa, Ken-ichi; Kubo, Kiyoshi; Ohmi, Kazuhito; Sakai, Hiroshi; Shibata, Kyo; Suetsugu, Yusuke; Tobiyama, Makoto; Gonnella, Daniel; Guo, Weiming; Harkay, Katherine; Holtzapple, Robert; Jones, James; Wolski, Andrzej; Kharakh, David; Ng, Johnny; Pivi, Mauro; Wang, Lanfa; Ross, Marc; Tan, Cheng-Yang; Zwaska, Robert; Schachter, Levi; Wilkinson, Eric

    2010-01-01

    The Cornell Electron Storage Ring (CESR) has been reconfigured as a test accelerator (CesrTA) for a program of electron cloud (EC) research at ultra low emittance. The instrumentation in the ring has been upgraded with local diagnostics for measurement of cloud density and with improved beam diagnostics for the characterization of both the low emittance performance and the beam dynamics of high intensity bunch trains interacting with the cloud. A range of EC mitigation methods have been deployed and tested and their effectiveness is discussed. Measurements of the electron cloud’s effect on the beam under a range of conditions are discussed along with the simulations being used to quantitatively understand these results

  18. Laser-assisted electron emission from gated field-emitters

    CERN Document Server

    Ishizuka, H; Yokoo, K; Mimura, H; Shimawaki, H; Hosono, A

    2002-01-01

    Enhancement of electron emission by illumination of gated field-emitters was studied using a 100 mW cw YAG laser at a wavelength of 532 nm, intensities up to 10 sup 7 W/m sup 2 and mechanically chopped with a rise time of 4 mu s. When shining an array of 640 silicon emitters, the emission current responded quickly to on-off of the laser. The increase of the emission current was proportional to the basic emission current at low gate voltages, but it was saturated at approx 3 mu A as the basic current approached 100 mu A with the increase of gate voltage. The emission increase was proportional to the square root of laser power at low gate voltages and to the laser power at elevated gate voltages. For 1- and 3-tip silicon emitters, the rise and fall of the current due to on-off of the laser showed a significant time lag. The magnitude of emission increase was independent of the position of laser spot on the emitter base and reached 2 mu A at a basic current of 5 mu A without showing signs of saturation. The mech...

  19. Low Emittance Guns for the ILC Polarized Electron Beam

    International Nuclear Information System (INIS)

    Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.; Kirby, R. E.; Maruyama, T.; Miller, R. H.; Wang, J. W.; Zhou, F.

    2007-01-01

    Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressed by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of ≥200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while ≥500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns

  20. Low Emittance Guns for the ILC Polarized Electron Beam

    International Nuclear Information System (INIS)

    Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.; Kirby, R.E.; Maruyama, T.; Miller, R.H.; Wang, J.W.; Zhou, F.; SLAC

    2006-01-01

    Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressed by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of (ge)200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while (ge)500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns

  1. Emittance growth induced by electron cloud in proton storage rings

    CERN Document Server

    Benedetto, Elena; Coppa, G

    2006-01-01

    In proton and positron storage rings with many closely spaced bunches, a large number of electrons can accumulate in the beam pipe due to various mechanisms (photoemission, residual gas ionization, beam-induced multipacting). The so-formed electron cloud interacts with the positively charged bunches, giving rise to instabilities, emittance growth and losses. This phenomenon has been observed in several existing machines such as the CERN Super Proton Synchrotron (SPS), whose operation has been constrained by the electron-cloud problem, and it is a concern for the Large Hadron Collider (LHC), under construction at CERN. The interaction between the beam and the electron cloud has features which cannot be fully taken into account by the conventional and known theories from accelerators and plasma physics. Computer simulations are indispensable for a proper prediction and understanding of the instability dynamics. The main feature which renders the beam-cloud interactions so peculiar is that the the electron cloud...

  2. Shaping the electron beams with submicrosecond pulse duration in sources and electron accelerators with plasma emitters

    CERN Document Server

    Gushenets, V I

    2001-01-01

    One studies the techniques in use to shape submicrosecond electron beams and the physical processes associated with extraction of electrons from plasma in plasma emitters. Plasma emitter base sources and accelerators enable to generate pulse beams with currents varying from tens of amperes up to 10 sup 3 A, with current densities up to several amperes per a square centimeter, with pulse duration constituting hundreds of nanoseconds and with high frequencies of repetition

  3. Field Emitter Arrays for a Free Electron Laser Application

    CERN Document Server

    Shing-Bruce-Li, Kevin; Ganter, Romain; Gobrecht, Jens; Raguin, Jean Yves; Rivkin, Leonid; Wrulich, Albin F

    2004-01-01

    The development of a new electron gun with the lowest possible emittance would help reducing the total length and cost of a free electron laser. Field emitter arrays (FEAs) are an attractive technology for electron sources of ultra high brightness. Indeed, several thousands of microscopic tips can be deposited on a 1 mm diameter area. Electrons are then extracted by applying voltage to a first grid layer close to the tip apexes, the so called gate layer, and focused by a second grid layer one micrometer above the tips. The typical aperture diameter of the gate and the focusing layer is in the range of one micrometer. One challenge for such cathodes is to produce peak currents in the ampere range since the usual applications of FEAs require less than milliampere. Encouraging peak current performances have been obtained by applying voltage pulses at low frequency between gate and tips. In this paper we report on different tip materials available on the market: diamond FEAs from Extreme Devices Inc., ZrC single ...

  4. Emittance Measurements from a Laser Driven Electron Injector

    CERN Document Server

    Reis, D

    2003-01-01

    The Gun Test Facility (GTF) at the Stanford Linear Accelerator Center was constructed to develop an appropriate electron beam suitable for driving a short wavelength free electron laser (FEL) such as the proposed Linac Coherent Light Source (LCLS). For operation at a wavelength of 1.5 (angstrom), the LCLS requires an electron injector that can produce an electron beam with approximately 1 pi mm-mrad normalized rms emittance with at least 1 nC of charge in a 10 ps or shorter bunch. The GTF consists of a photocathode rf gun, emittance-compensation solenoid, 3 m linear accelerator (linac), drive laser, and diagnostics to measure the beam. The rf gun is a symmetrized 1.6 cell, s-band high gradient, room temperature, photocathode structure. Simulations show that this gun when driven by a temporally and spatially shaped drive laser, appropriately focused with the solenoid, and further accelerated in linac can produce a beam that meets the LCLS requirements. This thesis describes the initial characterization of the ...

  5. MOS current gain cells with electronically variable gain and constant bandwidth

    NARCIS (Netherlands)

    Klumperink, Eric A.M.; Seevinck, Evert

    1989-01-01

    Two MOS current gain cells are proposed that provide linear amplification of currents supplied by several linear MOS V-I converters. The gain is electronically variable by a voltage or a current and can be made insensitive to temperature and IC processing. The gain cells have a constant

  6. Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

    Science.gov (United States)

    Ullah, Muhammad S.; Yousuf, Abdul Hamid Bin; Es-Sakhi, Azzedin D.; Chowdhury, Masud H.

    2018-04-01

    Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using `DFT materials properties simulator'. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

  7. ROLE OF DIAMOND SECONDARY EMITTERS IN HIGH BRIGHTNESS ELECTRON SOURCES

    International Nuclear Information System (INIS)

    2005-01-01

    In this paper we explore the possibility of using diamond secondary emitter in a high average current electron injector to amplify the current from the photocathode and to isolate the cathode and the injector from each other to increase the life time of the cathode and preserve the performance of the injector. Secondary electron yield of 225 and current density of 0.8 a/cm 2 have been measured in the transmission mode from type 2 a natural diamond. Although the diamond will be heated during normal operation in the injector, calculations indicate that by cryogenically cooling the diamond, the temperature gradient along the diamond can be maintained within the acceptable range. The electron energy and temporal distributions are expected to be narrow from this device resulting in high brightness beams. Plans are underway to measure the SEY in emission mode, fabricate photocathode-diamond capsule and test diamond and capsule in superconducting RF injector

  8. Electron beam effects on VLSI MOS conditions for testing and reconfiguration

    International Nuclear Information System (INIS)

    Girard, P.; Roche, F.M.; Pistoulet, B.

    1986-01-01

    Wafer scale integrated-MOS circuits problems related to test and reconfiguration by electron beams are analyzed. First of all the alterations in characteristics of MOS circuits submitted to an electron beam testing are considered. Then the capabilities of reconfiguration by an electron beam bombardment are discussed. The various phenomena involved are reviewed. Experimental data are reported and discussed on the light of data of the literature. (Auth.)

  9. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  10. Transport and acceleration of low-emittance electron beams

    International Nuclear Information System (INIS)

    Henke, H.

    1989-01-01

    Linear accelerators for colliders and for free-electron lasers require beams with both high brightness and low emittance. Their transport and acceleration is limited by single-particle effects originating from injection jitter, from the unavoidable position jitter of components, and from chromaticity. Collective phenomena, essentially due to wake fields acting within the bunch, are most severe in the case of high-frequency structures, i.e. a small aperture. Whilst, in the past, the transverse wake-field effects were believed to be most serious, we know that they can even be beneficial when inducing a corresponding spread in betatron oscillation either by an energy spread along the bunch or by an RF focusing system acting on the bunch scale. This paper evaluates the different effects by simple analytical means after making use of the smooth focusing approximation and the two-particle model. Numerical simulation results are used for verification. 14 refs., 6 figs., 2 tabs

  11. Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

    International Nuclear Information System (INIS)

    Han, Yang; Zhou, Jian; Dong, Jinming

    2015-01-01

    Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS 2 . • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS 2 are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS 2 nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS 2 nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS 2 nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS 2 nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS 2 nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS 2 nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics

  12. Measuring Beam Sizes and Ultra-Small Electron Emittances Using an X-ray Pinhole Camera.

    Science.gov (United States)

    Elleaume, P; Fortgang, C; Penel, C; Tarazona, E

    1995-09-01

    A very simple pinhole camera set-up has been built to diagnose the electron beam emittance of the ESRF. The pinhole is placed in the air next to an Al window. An image is obtained with a CCD camera imaging a fluorescent screen. The emittance is deduced from the size of the image. The relationship between the measured beam size and the electron beam emittance depends upon the lattice functions alpha, beta and eta, the screen resolution, pinhole size and photon beam divergence. The set-up is capable of measuring emittances as low as 5 pm rad and is presently routinely used as both an electron beam imaging device and an emittance diagnostic.

  13. Emittance growth caused by bends in the Los Alamos free-electron laser energy recovery experiment

    International Nuclear Information System (INIS)

    Carlsten, B.E.

    1987-01-01

    Experimentally transporting the beam from the wiggler to the decelerators in the energy recovery experiment (ERX) at the Los Alamos National Laboratory free-electron laser was more difficult than expected because of the large initial emittance in the beam. This emittance was apparently caused in an early 60 0 achromatic bend. To get this beam through subsequent bends without wall interception, the quadrupole focusing had to be changed from the design amount; as a result, the emittance grew further. This paper discusses various mechanisms for this emittance growth in the 60 0 bend, including effects caused by path changes in the bend resulting from wake-field-induced energy changes of particles in the beam and examines emittance filters, ranging from a simple aperture near a beam crossover to more complicated telescope schemes designed to regain the original emittance before the 60 0 bend

  14. Integrated circuits with emitter coupling and their application in nanosecond nuclear electronics

    International Nuclear Information System (INIS)

    Basiladze, S.G.

    1976-01-01

    Principal static and dynamic characteristics are considered of integrated circuits with emitter coupling, as well as problems of signal transmission. Diagrams are given of amplifiers, discriminators, time interval drivers, generators, etc. Systems and units of nanosecond electronics employing integrated circuits with emitter coupling are briefly described

  15. Effect of interfaces on electron transport properties of MoS2-Au Contacts

    Science.gov (United States)

    Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

    2014-03-01

    Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

  16. Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

    Science.gov (United States)

    Teng, Chen; Elias, Luis R.

    1995-02-01

    This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations.

  17. Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

    International Nuclear Information System (INIS)

    Chen Teng; Central Florida Univ., Orlando, FL; Elias, L.R. R.; Central Florida Univ., Orlando, FL

    1995-01-01

    This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations. ((orig.))

  18. Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen Teng [University of Central Florida, Orlando, FL (United States). Center for Research in Electro-Optics and Lasers (CREOL)]|[Central Florida Univ., Orlando, FL (United States). Dept. of Physics; Elias, L.R. R. [University of Central Florida, Orlando, FL (United States). Center for Research in Electro-Optics and Lasers (CREOL)]|[Central Florida Univ., Orlando, FL (United States). Dept. of Physics

    1995-01-30

    This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations. ((orig.))

  19. Is MoS2 a robust material for 2D electronics?

    International Nuclear Information System (INIS)

    Lorenz, Tommy; Joswig, Jan-Ole; Seifert, Gotthard; Ghorbani-Asl, Mahdi; Heine, Thomas

    2014-01-01

    A nanoindentation computer experiment has been carried out by means of Born–Oppenheimer molecular-dynamics simulations employing the density-functional based tight-binding method. A free-standing MoS 2 sheet, fixed at a circular support, was indented by a stiff, sharp tip. During this process, the strain on the nanolayer is locally different, with maximum values in the vicinity of the tip. All studied electronic properties—the band gap, the projected density of states, the atomic charges and the quantum conductance through the layer—vary only slightly before they change significantly when the MoS 2 sheet finally is pierced. After strong local deformation due to the indentation process, the electronic conductance in our model still is 80% of its original value. Thus, the electronic structure of single-layer MoS 2 is rather robust upon local deformation. (paper)

  20. Atomic and electronic structure of MoS2 nanoparticles

    DEFF Research Database (Denmark)

    Bollinger, Mikkel; Jacobsen, Karsten Wedel; Nørskov, Jens Kehlet

    2003-01-01

    Using density-functional theory (DFT) we present a detailed theoretical study of MoS2 nanoparticles. We focus on the edge structures, and a number of different edge terminations are investigated. Several, but not all, of these configurations have one-dimensional metallic states localized at the e...... and the composition of the gas phase. Using the Tersoff-Hamann formalism, scanning-tunneling microscopy (STM) images of the edges are simulated for direct comparison with recent STM experiments. In this way we identify the experimentally observed edge structure....

  1. Surface-conduction electron-emitter characteristics and fabrication based on vertically aligned carbon nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Li, Kuan-Wei [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Honda, Shin-ichi [Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Lin, Pao-Hung; Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

    2017-06-01

    Graphical abstract: The pattern design provides a new structure of surface-conduction electron-emitter display (SED). Delta-star shaped vertically aligned CNT (VACNT) arrays with 20o tips can simultaneously provide three emitters to bombard the sides of equilateral triangles pattern of VACNT, which produces numerous secondary electrons and enhance the SED efficiency. - Highlights: • The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. • The vertically aligned CNT (VACNT) arrays with 20° tips of the delta-star arrangement are used as cathodes that easily emit electrons. The cathode pattern simultaneously provides three emitters to bombard the sides of equilateral triangles pattern of VACNT. • The VACNT arrays were covered with magnesium oxide (MgO) nanostructures to promote the surface-conduction electron-emitter display (SED) efficiency (η). • The η was stably maintained in the 75–85% range. The proposed design provides a facile new method for developing SED applications. - Abstract: The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. Vertically aligned CNT arrays with a delta-star arrangement were patterned and synthesized onto a quartz substrate using photolithography and thermal chemical vapor deposition. Delta-star shaped VACNT arrays with 20° tips are used as cathodes that easily emit electrons because of their high electrical field gradient. In order to improve the field emission and secondary electrons (SEs) in SCE applications, magnesium oxide (MgO) nanostructures were coated onto the VACNT arrays to promote the surface-conduction electron-emitter display (SED) efficiency (η). According to the definition of η in SCE applications, in this study, the η was stably maintained in the 75–85% range. The proposed design provides a facile new method for

  2. Evolution of electronic structure in highly charge doped MoS2 compounds

    Science.gov (United States)

    Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

    Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

  3. Growth rate of non-thermodynamic emittance of intense electron beams

    International Nuclear Information System (INIS)

    Carlsten, B.E.

    1998-01-01

    The nonlinear free-energy concept has been particularly useful in estimating the emittance growth resulting from any excess energy of electron beams in periodic and uniform channels. However, additional emittance growth, that is geometrical rather than thermodynamic in origin, is induced if the particles have different kinetic energies and axial velocities, which is common for mildly relativistic, very intense electron beams. This effect is especially strong if particles lose or gain significant kinetic energy due to the beam's potential depression, as the beam converges and diverges. In this paper we analyze these geometric emittance growth mechanisms for a uniform, continuous, intense electron beam in a focusing transport channel consisting of discrete solenoidal magnets, over distances short enough that the beam does not reach equilibrium. These emittance growth mechanisms are based on the effects of (1) energy variations leading to nonlinearities in the space-charge force even if the current density is uniform, (2) an axial velocity shear radially along the beam due to the beam's azimuthal motion in the solenoids, and (3) an energy redistribution of the beam as the beam compresses or expands. The geometric emittance growth is compared in magnitude with that resulting from the nonlinear free energy, for the case of a mismatched beam in a uniform channel, and is shown to dominate for certain experimental conditions. Rules for minimizing the emittance along a beamline are outlined. copyright 1998 The American Physical Society

  4. Electron transfer kinetics on natural crystals of MoS2 and graphite.

    Science.gov (United States)

    Velický, Matěj; Bissett, Mark A; Toth, Peter S; Patten, Hollie V; Worrall, Stephen D; Rodgers, Andrew N J; Hill, Ernie W; Kinloch, Ian A; Novoselov, Konstantin S; Georgiou, Thanasis; Britnell, Liam; Dryfe, Robert A W

    2015-07-21

    Here, we evaluate the electrochemical performance of sparsely studied natural crystals of molybdenite and graphite, which have increasingly been used for fabrication of next generation monolayer molybdenum disulphide and graphene energy storage devices. Heterogeneous electron transfer kinetics of several redox mediators, including Fe(CN)6(3-/4-), Ru(NH3)6(3+/2+) and IrCl6(2-/3-) are determined using voltammetry in a micro-droplet cell. The kinetics on both materials are studied as a function of surface defectiveness, surface ageing, applied potential and illumination. We find that the basal planes of both natural MoS2 and graphite show significant electroactivity, but a large decrease in electron transfer kinetics is observed on atmosphere-aged surfaces in comparison to in situ freshly cleaved surfaces of both materials. This is attributed to surface oxidation and adsorption of airborne contaminants at the surface exposed to an ambient environment. In contrast to semimetallic graphite, the electrode kinetics on semiconducting MoS2 are strongly dependent on the surface illumination and applied potential. Furthermore, while visibly present defects/cracks do not significantly affect the response of graphite, the kinetics on MoS2 systematically accelerate with small increase in disorder. These findings have direct implications for use of MoS2 and graphene/graphite as electrode materials in electrochemistry-related applications.

  5. Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

    Energy Technology Data Exchange (ETDEWEB)

    Grishkov, A. A. [Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation); Kornilov, S. Yu., E-mail: kornilovsy@gmail.com; Rempe, N. G. [Tomsk State University of Control Systems and Radioelectronics (Russian Federation); Shidlovskiy, S. V. [Tomsk State University (Russian Federation); Shklyaev, V. A. [Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation)

    2016-07-15

    The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

  6. Emittance simulation for a different electron bunch charges with upgraded PITZ setup

    Energy Technology Data Exchange (ETDEWEB)

    Vashchenko, Grygorii [DESY, Platanenallee 6, 15738 Zeuthen (Germany)

    2013-07-01

    The photo injector test facility at DESY, Zeuthen site (PITZ) was invented with an aim to develop, characterize and optimize the electron sources for linac driven free electron lasers like FLASH and European XFEL. As a prerequisite for a successful experimental emittance optimization, emittance dependencies on the majority of linac parameters have to be studied in simulations. Despite that the nominal electron bunch charge for the operation of FLASH and XFEL is 1nC, there is an interest of the community to operate with other bunch charges. Emittance dependencies on such machine parameters like laser spot size on the photo cathode, laser pulse length, gun launching phase, focusing solenoid current and first accelerating structure gradient are simulated for different electron bunch charges. Based on the simulations data the systematic errors caused by detuning of the different machine parameters from their optimum values are estimated.

  7. Microelectrode for energy and current control of nanotip field electron emitters

    International Nuclear Information System (INIS)

    Lüneburg, S.; Müller, M.; Paarmann, A.; Ernstorfer, R.

    2013-01-01

    Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10–30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations

  8. Ultrafast transmission electron microscopy using a laser-driven field emitter: Femtosecond resolution with a high coherence electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Feist, Armin; Bach, Nora; Rubiano da Silva, Nara; Danz, Thomas; Möller, Marcel; Priebe, Katharina E.; Domröse, Till; Gatzmann, J. Gregor; Rost, Stefan; Schauss, Jakob; Strauch, Stefanie; Bormann, Reiner; Sivis, Murat; Schäfer, Sascha, E-mail: sascha.schaefer@phys.uni-goettingen.de; Ropers, Claus, E-mail: claus.ropers@uni-goettingen.de

    2017-05-15

    We present the development of the first ultrafast transmission electron microscope (UTEM) driven by localized photoemission from a field emitter cathode. We describe the implementation of the instrument, the photoemitter concept and the quantitative electron beam parameters achieved. Establishing a new source for ultrafast TEM, the Göttingen UTEM employs nano-localized linear photoemission from a Schottky emitter, which enables operation with freely tunable temporal structure, from continuous wave to femtosecond pulsed mode. Using this emission mechanism, we achieve record pulse properties in ultrafast electron microscopy of 9 Å focused beam diameter, 200 fs pulse duration and 0.6 eV energy width. We illustrate the possibility to conduct ultrafast imaging, diffraction, holography and spectroscopy with this instrument and also discuss opportunities to harness quantum coherent interactions between intense laser fields and free-electron beams. - Highlights: • First implementation of an ultrafast TEM employing a nanoscale photocathode. • Localized single photon-photoemission from nanoscopic field emitter yields low emittance ultrashort electron pulses. • Electron pulses focused down to ~9 Å, with a duration of 200 fs and an energy width of 0.6 eV are demonstrated. • Quantitative characterization of ultrafast electron gun emittance and brightness. • A range of applications of high coherence ultrashort electron pulses is shown.

  9. Low emittance electron beam formation with a 17 GHz RF gun

    Directory of Open Access Journals (Sweden)

    W. J. Brown

    2001-08-01

    Full Text Available We report on electron beam quality measurement results from the Massachusetts Institute of Technology 17 GHz RF gun experiment. The 1.5 cell RF gun uses a solenoid for emittance compensation. It has produced bunch charges up to 0.1 nC with beam energies up to 1 MeV. The normalized rms emittance of the beam after 35 cm of transport from the gun has been measured by a slit technique to be 3π mm mrad for a 50 pC bunch. This agrees well with PARMELA simulations at these beam energies. At the exit of the electron gun, we estimate the emittance to be about 1π mm mrad, which corresponds to a beam brightness of about 80 A/(π mm mrad^{2}. Improved beam quality should be possible with a higher energy output electron beam from the gun.

  10. Anti-site defected MoS2 sheet-based single electron transistor as a gas sensor

    Science.gov (United States)

    Sharma, Archana; Husain, Mushahid; Srivastava, Anurag; Khan, Mohd. Shahid

    2018-05-01

    To prevent harmful and poisonous CO gas molecules, catalysts are needed for converting them into benign substances. Density functional theory (DFT) calculations have been used to study the adsorption of CO and CO2 gas molecules on the surface of MoS2 monolayer with Mo atom embedded at S-vacancy site (MoS). The strong interaction between Mo metal with pristine MoS2 sheet suggests its strong binding nature. Doping Mo into MoS2 sheet enhances CO and CO2 adsorption strength. The sensing response of MoS-doped MoS2 system to CO and CO2 gas molecules is obtained in the single electron transistor (SET) environment by varying bias voltage. Doping reduces charging energy of the device which results in fast switching of the device from OFF to ON state.

  11. Plexciton quenching by resonant electron transfer from quantum emitter to metallic nanoantenna.

    Science.gov (United States)

    Marinica, D C; Lourenço-Martins, H; Aizpurua, J; Borisov, A G

    2013-01-01

    Coupling molecular excitons and localized surface plasmons in hybrid nanostructures leads to appealing, tunable optical properties. In this respect, the knowledge about the excitation dynamics of a quantum emitter close to a plasmonic nanoantenna is of importance from fundamental and practical points of view. We address here the effect of the excited electron tunneling from the emitter into a metallic nanoparticle(s) in the optical response. When close to a plasmonic nanoparticle, the excited state localized on a quantum emitter becomes short-lived because of the electronic coupling with metal conduction band states. We show that as a consequence, the characteristic features associated with the quantum emitter disappear from the optical absorption spectrum. Thus, for the hybrid nanostructure studied here and comprising quantum emitter in the narrow gap of a plasmonic dimer nanoantenna, the quantum tunneling might quench the plexcitonic states. Under certain conditions the optical response of the system approaches that of the individual plasmonic dimer. Excitation decay via resonant electron transfer can play an important role in many situations of interest such as in surface-enhanced spectroscopies, photovoltaics, catalysis, or quantum information, among others.

  12. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Li, He; Wenjiang, Wang, E-mail: wwj@mail.xjtu.edu.cn; Xiaoning, Zhang

    2017-03-31

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm{sup 2} and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H{sup +} but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  13. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    International Nuclear Information System (INIS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-01-01

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm"2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H"+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  14. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Science.gov (United States)

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  15. Nonlinear electrostatic emittance compensation in kA, fs electron bunches

    International Nuclear Information System (INIS)

    Geer, S.B. van der; Loos, M.J. de; Botman, J.I.M.; Luiten, O.J.; Wiel, M.J. van der

    2002-01-01

    Nonlinear space-charge effects play an important role in emittance growth in the production of kA electron bunches with a bunch length much smaller than the bunch diameter. We propose a scheme employing the radial third-order component of an electrostatic acceleration field, to fully compensate the nonlinear space-charge effects. This results in minimal transverse root-mean-square emittance. The principle is demonstrated using our design simulations of a device for the production of high-quality, high-current, subpicosecond electron bunches using electrostatic acceleration in a 1 GV/m field. Simulations using the GPT code produce a bunch of 100 pC and 73 fs full width at half maximum pulse width, resulting in a peak current of about 1.2 kA at an energy of 2 MeV. The compensation scheme reduces the root-mean-square emittance by 34% to 0.4π mm mrad

  16. Scaling laws with current for equilibrium momentum spread and emittances from intrabeam scattering and electron cooling

    International Nuclear Information System (INIS)

    Hasse, R.W.; Boine-Frankenheim, O.

    2004-01-01

    Based on the theories of Piwinski, Bjorken-Mtingawa and Martini of Coulomb scattering, expressions for the heating rates due to intrabeam scattering were known since a long time. Simplifications by Wei-Parzen and Rao and Piwinski led to analytic approximations which are easily applicable to existing lattices. We use these approximations and also the formulae from thermal equilibration of Struckmeier and equate them to either constant cooling rates from electron cooling or to the Novosibirsk cooling rates for electron cooling to calculate the equilibrium values of the horizontal and vertical emittances and the momentum spread (longitudinal emittance) for typical beams in the ESR or in the HESR. For constant cooling and all approximation formulae the ratio of current to the product of the three emittances remains almost constant. This yields a slope of the momentum spread with current between 0.2 and 0.3, in agreement with experimental data. Using the Novosibirsk cooling rates this slope is much larger

  17. Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

    Science.gov (United States)

    Li, Gen

    2018-05-01

    Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

  18. The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1999-01-01

    Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

  19. Test beam results of a low-pressure micro-strip gas chamber with a secondary-electron emitter

    International Nuclear Information System (INIS)

    Kwan, S.; Anderson, D.F.; Zimmerman, J.; Sbarra, C.; Salomon, M.

    1994-10-01

    We present recent results, from a beam test, on the angular dependence of the efficiency and the distribution of the signals on the anode strips of a low-pressure microstrip gas chamber with a thick CsI layer as a secondary-electron emitter. New results of CVD diamond films as secondary-electron emitters are discussed

  20. Evaluation and application of the low energy electron emitter 161Tb

    International Nuclear Information System (INIS)

    Lehenberger, Silvia M.

    2010-01-01

    The low energy electron emitter 161 Tb was produced n.c.a. in quantities sufficient for therapeutic applications and successfully used for labeling of peptides and antibodies. Furthermore, these compounds have been compared to n.c.a. 177 Lu labeled mAbs via cell experiments, a radionuclide that is already used in clinical nuclear oncology.

  1. Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

    Science.gov (United States)

    Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K; Sangwan, Vinod K; Long, Fei; Foss, Cameron J; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin

    2017-08-01

    Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS 2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Measurements of electron beam emittance in the Accelerator Test Facility damping ring operated in multibunch modes

    Directory of Open Access Journals (Sweden)

    Yosuke Honda

    2003-09-01

    Full Text Available We present the measurement results of electron beam emittance in the Accelerator Test Facility damping ring operated in multibunch modes. The measurements were carried out with an upgraded laser wire beam profile monitor. The monitor has now a vertical wire as well as a horizontal one and is able to make much faster measurements thanks to an increased effective laser power inside the cavity. The measured emittance shows no large bunch-to-bunch dependence in either the horizontal or vertical directions. The values of the vertical emittance are similar to those obtained in the single-bunch operation. The present results are an important step toward the realization of a high-energy linear collider.

  3. Parametric emittance measurements of electron beams produced by a laser plasma accelerator

    Science.gov (United States)

    Barber, S. K.; van Tilborg, J.; Schroeder, C. B.; Lehe, R.; Tsai, H.-E.; Swanson, K. K.; Steinke, S.; Nakamura, K.; Geddes, C. G. R.; Benedetti, C.; Esarey, E.; Leemans, W. P.

    2018-05-01

    Laser plasma accelerators (LPA) offer an exciting possibility to deliver high energy, high brightness electrons beams in drastically smaller distance scales than is typical for conventional accelerators. As such, LPAs draw considerable attention as potential drivers for next generation light sources and for a compact linear collider. In order to asses the viability of an LPA source for a particular application, the brightness of the source should be properly characterized. In this paper, we present charge dependent transverse emittance measurements of LPA sources using both ionization injection and shock induced density down ramp injection, with the latter delivering smaller transverse emittances by a factor of two when controlling for charge density. The single shot emittance method is described in detail with a discussion on limitations related to second order transport effects. The direct role of space charge is explored through a series of simulations and found to be consistent with experimental observations.

  4. Special features of electron sources with CNT field emitter and micro grid

    International Nuclear Information System (INIS)

    Knapp, Wolfram; Schleussner, Detlef

    2005-01-01

    A micro-sized electron source plays an important role for new vacuum triode applications. For these applications, an electron source with CNT field emitter and micro grid for 1 mA was developed and investigated. The miniaturisation of the electron source was achieved by the use of a carbon nanotube (CNT) field emitter and a micro grid, with a distance of only a few micrometers. Because of the threshold field strength for field emission of CNTs being in the range 1-5 V/μm, the grid voltage can be lower than 100 V. In our contribution, we discuss the influence of the micro grid on electron source properties, especially anode-current hysteresis, anode-field penetration through the micro grid and micro-lensing effect

  5. Electron Emitter for small-size Electrodynamic Space Tether using MEMS Technology

    DEFF Research Database (Denmark)

    Fleron, René A. W.; Blanke, Mogens

    2004-01-01

    Adjustment of the orbit of a spacecraft using the forces created by an electro-dynamic space-tether has been shown as a theoretic possibility in recent literature. Practical implementation is being pursued for larger scale missions where a hot filament device controls electron emission...... and the current flowing in the electrodynamic space tether. Applications to small spacecraft, or space debris in the 1–10 kg range, possess difficulties with electron emission technology, as low power emitting devices are needed. This paper addresses the system concepts of a small spacecraft electrodynamic tether...... system with focus on electron emitter design and manufacture using micro-electro-mechanical- system (MEMS) technology. The paper addresses the system concepts of a small size electrodynamic tether mission and shows a novel electron emitter for the 1-2 mA range where altitude can be effectively affected...

  6. Role of oxygen adsorption in modification of optical and surface electronic properties of MoS2

    Science.gov (United States)

    Shakya, Jyoti; Kumar, Sanjeev; Mohanty, Tanuja

    2018-04-01

    In this work, the effect of surface oxidation of molybdenum disulfide (MoS2) nanosheets induced by hydrogen peroxide (H2O2) on the work function and bandgap of MoS2 has been investigated for tuning its optical and electronic properties. Transmission electron microscopy studies reveal the existence of varying morphologies of few layers of MoS2 as well as quantum dots due to the different absorbing effects of two mixed solvents on MoS2. The X-ray diffraction, electron paramagnetic resonance, and Raman studies indicate the presence of physical as well as chemical adsorption of oxygen atoms in MoS2. The photoluminescence spectra show the tuning of bandgap arising from the passivation of trapping centers leading to radiative recombination of excitons. The value of work function obtained from scanning Kelvin probe microscopy of MoS2 in mixed solvents of H2O2 and N-methyl-2-pyrrolidone increases with an increase in the concentration of H2O2. A linear relationship could be established between H2O2 content in mixed solvent and measured values of work function. This work gives the alternative route towards the commercial use of defect engineered transition metal dichalcogenide materials in diverse fields.

  7. Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

    International Nuclear Information System (INIS)

    Garcia, Alejandra; Raya, Andres M.; Mariscal, Marcelo M.; Esparza, Rodrigo; Herrera, Miriam; Molina, Sergio I.; Scavello, Giovanni; Galindo, Pedro L.; Jose-Yacaman, Miguel; Ponce, Arturo

    2014-01-01

    In this work we examined MoS 2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS 2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron–matter. The threshold energy for the MoS 2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS 2 layers. - Highlights: • MoS 2 sheets were exfoliated by using hydrogen gas flow to separate the MoS 2 layers. • The optimum energy to avoid structural damage was calculated. • Cs-corrected STEM imaging was used to obtain atomic resolution images. • Three energies were used in STEM imaging: 80, 120 and 200 kV. • A quantitative method for determining the number of layers has been applied

  8. An analysis of radiation effects on electronics and soi-mos devices as an alternative

    International Nuclear Information System (INIS)

    Ikraiam, F. A.

    2013-01-01

    The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

  9. Multi-field electron emission pattern of 2D emitter: Illustrated with graphene

    Science.gov (United States)

    Luo, Ma; Li, Zhibing

    2016-11-01

    The mechanism of laser-assisted multi-field electron emission of two-dimensional emitters is investigated theoretically. The process is basically a cold field electron emission but having more controllable components: a uniform electric field controls the emission potential barrier, a magnetic field controls the quantum states of the emitter, while an optical field controls electron populations of specified quantum states. It provides a highly orientational vacuum electron line source whose divergence angle over the beam plane is inversely proportional to square root of the emitter height. Calculations are carried out for graphene with the armchair emission edge, as a concrete example. The rate equation incorporating the optical excitation, phonon scattering, and thermal relaxation is solved in the quasi-equilibrium approximation for electron population in the bands. The far-field emission patterns, that inherit the features of the Landau bands, are obtained. It is found that the optical field generates a characteristic structure at one wing of the emission pattern.

  10. Spectral line shape simulation for electron stark-broadening of ion emitters in plasmas

    International Nuclear Information System (INIS)

    Dufour, Emmanuelle; Calisti, Annette; Talin, Bernard; Gigosos, Marco A.; Gonzalez, Manuel A.; Dufty, Jim W.

    2002-01-01

    Electron broadening for ions in plasmas is investigated in the framework of a simplified semi-classical model involving an ionic emitter imbedded in an electron gas. A regularized Coulomb potential that removes the divergence at short distances is postulated for the ion-electron interaction. Line shape simulations based on Molecular Dynamics for the ion impurity and the electrons, accounting for all the correlations, are reported. Comparisons with line shapes obtained with a quasi-particle model show expected correlation effects. Through an analysis of the results with the line shape code PPP, it is inferred that the correlation effect results mainly from the microfield dynamic properties

  11. A multislit transverse-emittance diagnostic for space-charge-dominated electron beams

    International Nuclear Information System (INIS)

    Piot, P.; Song, J.; Li, R.

    1997-01-01

    Jefferson Lab is developing a 10 MeV injector to provide an electron beam for a high-power free-electron laser (FEL). To characterize the transverse phase space of the space-charged-dominated beam produced by this injector, the authors designed an interceptive multislit emittance diagnostic. It incorporates an algorithm for phase-space reconstruction and subsequent calculation of the Twiss parameters and emittance for both transverse directions at an update rate exceeding 1 Hz, a speed that will facilitate the transverse-phase-space matching between the injector and the FEL's accelerator that is critical for proper operation. This paper describes issues pertaining to the diagnostic's design. It also discusses the acquisition system, as well as the software algorithm and its implementation in the FEL control system. First results obtained from testing this diagnostic in Jefferson Lab's Injector Test Stand are also included

  12. Novel non-intercepting diagnostic techniques for low-emittance relativistic electron beams

    International Nuclear Information System (INIS)

    Moran, M.J.; Chang, B.

    1988-01-01

    Relativistic electron beams are being generated with emittances low enough that diffraction radiation can be used for beam diagnostics. Techniques based on diffraction radiation can be used to measure the beam transverse momentum distribution and to measure the transverse spatial distribution. The radiation is intense and can be in the visible spectral region where optical diagnostic techniques can be used to maximum advantage. 4 refs. 3 figs

  13. Method of measuring the current density distribution and emittance of pulsed electron beams

    International Nuclear Information System (INIS)

    Schilling, H.B.

    1979-07-01

    This method of current density measurement employs an array of many Faraday cups, each cup being terminated by an integrating capacitor. The voltages of the capacitors are subsequently displayed on a scope, thus giving the complete current density distribution with one shot. In the case of emittance measurements, a moveable small-diameter aperture is inserted at some distance in front of the cup array. Typical results with a two-cathode, two-energy electron source are presented. (orig.)

  14. Viability of Using Diamond Field Emitter Array Cathodes in Free Electron Lasers

    Science.gov (United States)

    2010-06-01

    essential component of a field emitter array is the shape of the electric field lines and equipotential lines at the surface of the array. The...BARRIER AND QUANTUM TUNNELING ...........25 B. FIELD ENHANCEMENT AND SURFACE PROTRUSIONS .........26 C. ELECTRIC FIELDS AND ELECTRON TRAVEL...26 Figure 4. Diagram of a protrusion (triangular in shape) from the surface of a cathode. The protrusion is of height h, with a

  15. Mapping Catalytically Relevant Edge Electronic States of MoS2

    Science.gov (United States)

    2018-01-01

    Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L2,3 and S K-edges with distinctive spatial localization of such states observed in S L2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity. PMID:29721532

  16. Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS2 on a Gold Surface

    DEFF Research Database (Denmark)

    Sørensen, Signe Grønborg; Füchtbauer, Henrik Gøbel; Tuxen, Anders Kyrme

    2014-01-01

    When transition metal sulfides such as MoS2 are present in the single-layer form, the electronic properties change in fundamental ways, enabling them to be used, e.g., in two-dimensional semiconductor electronics, optoelectronics, and light harvesting. The change is related to a subtle modification...... with scanning tunneling microscopy and X-ray photoelectron spectroscopy characterization of two-dimensional single-layer islands of MoS2 synthesized directly on a gold single crystal substrate. Thanks to a periodic modulation of the atom stacking induced by the lattice mismatch, we observe a structural buckling...

  17. Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

    Science.gov (United States)

    Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

    2014-02-01

    Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

  18. Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

    Science.gov (United States)

    Zan, Wenyan; Geng, Wei; Liu, Huanxiang; Yao, Xiaojun

    2016-01-28

    Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

  19. Electronic structure and transport properties of zigzag MoS2 nanoribbons

    Science.gov (United States)

    Sharma, Uma Shankar; Shah, Rashmi; Mishra, Pankaj Kumar

    2018-05-01

    In present study, electronic and transport properties of the 8zigzag MoS2 nanoribbons (8ZMoS2NRs) are investigated using ab-initio density functional theory [DFT]. The calculations were performed using nonequilibrium Green's function (NEGF) formalism based on DFT as implemented in the TranSiesta code. Results show that the defect can introduces few extra states into the energy gap, which lead nanoribbons to reveal a metallic characteristic. The voltage-current (VI) graph of 8ZMoS2NRs show a threshold current increases after introducing Mo defect in the devices. when introducing a Mo vacancy under low biases, the current will be suppressed—whereas under high biases, the current through the defected 8ZMoS2NRs will increases rapidly, due to the other channel being opened, that make possibility of 8ZMoS2NRs application in electronic devices such as voltage regulation.

  20. Ultra-low emittance electron beam generation using ionization injection in a plasma beatwave accelerator

    Science.gov (United States)

    Schroeder, Carl; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

    2017-10-01

    Ultra-low emittance beams can be generated using ionization injection of electrons into a wakefield excited by a plasma beatwave accelerator. This all-optical method of electron beam generation uses three laser pulses of different colors. Two long-wavelength laser pulses, with frequency difference equal to the plasma frequency, resonantly drive a plasma wave without fully ionizing a gas. A short-wavelength injection laser pulse (with a small ponderomotive force and large peak electric field), co-propagating and delayed with respect to the beating long-wavelength lasers, ionizes a fraction of the remaining bound electrons at a trapped wake phase, generating an electron beam that is accelerated in the wakefield. Using the beating of long-wavelength pulses to generate the wakefield enables atomically-bound electrons to remain at low ionization potentials, reducing the required amplitude of the ionization pulse, and, hence, the initial transverse momentum and emittance of the injected electrons. An example is presented using two lines of a CO2 laser to form a plasma beatwave accelerator to drive the wake and a frequency-doubled Ti:Al2O3 laser for ionization injection. Supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  1. Transverse-emittance measurements on an S-band photocathode RF electron gun

    CERN Document Server

    Schmerge, J F; Clendenin, J E; Decker, Franz Josef; Dowell, D H; Gierman, S M; Limborg, C G; Murphy, B F

    2002-01-01

    Proposed fourth-generation light sources using SASE FELs to generate short pulse, coherent, X-rays require demonstration of high brightness electron sources. The gun test facility at SLAC was built to test high brightness sources for the proposed linac coherent light source at SLAC. The transverse-emittance measurements are made at nearly 30 MeV by measuring the spot size on a YAG screen using the quadrupole scan technique. The emittance was measured to vary from 1 to 3.5 mm mrad as the charge is increased from 50 to 350 pC using a laser pulse width of 2 ps FWHM. The measurements are in good agreement with simulation results using the LANL version of PARMELA.

  2. Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

    Science.gov (United States)

    Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

    2017-06-01

    The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

  3. Asymmetrical field emitter

    Science.gov (United States)

    Fleming, J.G.; Smith, B.K.

    1995-10-10

    A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.

  4. Phosphorescent rhenium emitters based on two electron-withdrawing diamine ligands: Structure, characterization and electroluminescent performance

    Energy Technology Data Exchange (ETDEWEB)

    Rui, Mei, E-mail: meirui2015@163.com [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yuhong, Wang [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yinting, Wang; Na, Zhang [Communication Training Base of The Headquarters of The General Staff, Zhangjiakou 075100, Hebei (China)

    2014-09-15

    In this paper, two diamine ligands having electron-withdrawing oxadiazole group and their corresponding Re(I) complexes were synthesized. Their geometric structure, electronic transition, photophysical property, thermal stability and electrochemical property were discussed in detail. Experimental data suggested that both complexes were promising yellow emitters with suited energy levels and good thermal stability for electroluminescent application. The correlation between emission performance and electron-withdrawing group was analyzed. It was found that electron-withdrawing group favored emission performance improvement. Their electroluminescence performance was also explored. Yellow electroluminescence was observed with maximum brightness of 1743 cd/m{sup 2}. - Highlights: • Oxadiazole derived diamine ligands and their Re(I) complexes were synthesized. • Their characters and properties were analyzed and compared in detail. • Electron-withdrawing group was proved to be positive for PL improvement. • Electroluminescence was obtained with maximum brightness of 1743 cd/m{sup 2}.

  5. High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

    KAUST Repository

    Torres, Carlos M.

    2015-12-09

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

  6. High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

    KAUST Repository

    Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

    2015-01-01

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

  7. Single-Particle Dynamics in Electron Storage Rings with Extremely Low Emittance

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yunhai; /SLAC

    2011-05-31

    Electron storage rings are widely used for high luminosity colliders, damping rings in high-energy linear colliders, and synchrotron light sources. They have become essential facilities to study high-energy physics and material and medical sciences. To further increase the luminosity of colliders or the brightness of synchrotron light sources, the beam emittance is being continually pushed downward, recently to the nanometer region. In the next decade, another order of reduction is expected. This requirement of ultra-low emittance presents many design challenges in beam dynamics, including better analysis of maps and improvement of dynamic apertures. To meet these challenges, we have refined transfer maps of common elements in storage rings and developed a new method to compute the resonance driving terms as they are built up along a beamline. The method is successfully applied to a design of PEP-X as a future light source with 100-pm emittance. As a result, we discovered many unexpected cancelations of the fourth-order resonance terms driven by sextupoles within an achromat.

  8. Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

    Science.gov (United States)

    Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

    2016-10-12

    Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS 2 can induce ∼6.5 × 10 11 cm -2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS 2 on h-BN was found to be ∼5 × 10 13 cm -2 at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS 2 /h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 10 12 cm -2 (T = 25 K). The reduced effective Schottky barrier height in MoS 2 /h-BN is attributed to the decreased effective work function of MoS 2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO 2 .

  9. Electronic and magnetic properties of 3d-metal trioxides superhalogen cluster-doped monolayer MoS2: A first-principles study

    International Nuclear Information System (INIS)

    Li, Dan; Niu, Yuan; Zhao, Hongmin; Liang, Chunjun; He, Zhiqun

    2014-01-01

    Utilizing first-principle calculations, the structural, electronic, and magnetic properties of monolayer MoS 2 doped with 3d transition-metal (TM) atoms and 3d-metal trioxides (TMO 3 ) superhalogen clusters are investigated. 3d-metal TMO 3 superhalogen cluster-doped monolayers MoS 2 almost have negative formation energies except CoO 3 and NiO 3 doped monolayer MoS 2 , which are much lower than those of 3d TM-doped structures. 3d-metal TMO 3 superhalogen clusters are more easily embedded in monolayer MoS 2 than 3d-metal atoms. MnO 3 , FeO 3 , CoO 3 , and NiO 3 incorporated into monolayer MoS 2 are magnetic, and the total magnetic moments are approximately 1.0, 2.0, 3.0, and 4.0 μB per supercell, respectively. MnO 3 and FeO 3 incorporated into monolayer MoS 2 become semiconductors, whereas CoO 3 and NiO 3 incorporated into monolayer MoS 2 become half-metallic. Our studies demonstrate that the half-metallic ferromagnetic nature of 3d-metal TMO 3 superhalogen clusters-doped monolayer MoS 2 has a great potential for MoS 2 -based spintronic device applications. -- Highlights: •TMO 3 superhalogen clusters incorporated into monolayer MoS 2 were investigated. •TMO 3 doped structures have much lower formation energies than TM doped structures. •TMO 3 cluster-doped MoS 2 are thermodynamically favored. •Significant charge transfers between O atoms and Mo atoms in TMO 3 doped structures. •MnO 3 , FeO 3 , CoO 3 , and NiO 3 incorporated into monolayer MoS 2 are magnetic.

  10. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Tseng, Chien-Chih; Li, Jun; Shi, Yumeng; Wei, Nini; Zhang, Daliang; Consiglio, Giuseppe Bernardo; Prabaswara, Aditya; Alhamoud, Abdullah Ali; Albadri, Abdulrahman  M.; Alyamani, Ahmed Y.; Zhang, Xixiang; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  11. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao

    2017-05-18

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  12. Emittance growth due to static and radiative space charge forces in an electron bunch compressor

    Science.gov (United States)

    Talman, Richard; Malitsky, Nikolay; Stulle, Frank

    2009-01-01

    Evolution of short intense electron bunches passing through bunch-compressing beam lines is studied using the UAL (Unified Accelerator Libraries) string space charge formulation [R. Talman, Phys. Rev. ST Accel. Beams 7, 100701 (2004)PRABFM1098-440210.1103/PhysRevSTAB.7.100701; N. Malitsky and R. Talman, in Proceedings of the 9th European Particle Accelerator Conference, Lucerne, 2004 (EPS-AG, Lucerne, 2004); R. Talman, Accelerator X-Ray Sources (Wiley-VCH, Weinheim, 2006), Chap. 13]. Three major configurations are studied, with the first most important and studied in greatest detail (because actual experimental results are available and the same results have been simulated with other codes): (i) Experimental bunch compression results were obtained at CTF-II, the CERN test facility for the “Compact Linear Collider” using electrons of about 40 MeV. Previous simulations of these results have been performed (using TraFiC4* [A. Kabel , Nucl. Instrum. Methods Phys. Res., Sect. A 455, 185 (2000)NIMAER0168-900210.1016/S0168-9002(00)00729-4] and ELEGANT [M. Borland, Argonne National Laboratory Report No. LS-287, 2000]). All three simulations are in fair agreement with the data except that the UAL simulation predicts a substantial dependence of horizontal emittance γx on beam width (as controlled by the lattice βx function) at the compressor location. This is consistent with the experimental observations, but inconsistent with other simulations. Excellent agreement concerning dependence of bunch energy loss on bunch length and magnetic field strength [L. Groening , in Proceedings of the Particle Accelerator Conference, Chicago, IL, 2001 (IEEE, New York, 2001), http://groening.home.cern/groening/csr_00.htm] confirms our understanding of the role played by coherent synchrotron radiation (CSR). (ii) A controlled comparison is made between the predictions of the UAL code and those of CSRTrack [M. Dohlus and T. Limberg, in Proceedings of the 2004 FEL Conference, pp. 18

  13. Low-energy electron emitters for targeted radiotherapy of small tumours

    International Nuclear Information System (INIS)

    Bernhardt, Peter; Forssell-Aronsson, Eva; Jacobsson, Lars; Skarnemark, Gunnar

    2001-01-01

    The possibility of using electron emitters to cure a cancer with metastatic spread depends on the energy of the emitted electrons. Electrons with high energy will give a high, absorbed dose to large tumours, but the absorbed dose to small tumours or single tumour cells will be low, because the range of the electrons is too long. The fraction of energy absorbed within the tumour decreases with increasing electron energy and decreasing tumour size. For tumours smaller than 1 g, the tumour-to-normal-tissue mean absorbed dose-rate ratio, TND, will be low, e.g. for 131 I and 90 Y, because of the high energy of the emitted electrons. For radiotherapy of small tumours, radionuclides emitting charged particles with short ranges (a few m u m ) are required. A mathematical model was constructed to evaluate the relation between TND and electron energy, photon-to-electron energy ratio, p/e, and tumour size. Criteria for the selection of suitable radionuclides for the treatment of small tumours were defined based on the results of the TND model. In addition, the possibility of producing such radionuclides and their physical and chemical properties were evaluated. Based on the mathematical model, the energy of the emitted electrons should be = 40 keV for small tumours ( 58m Co, 103m Rh, 119 Sb, 161 Ho, and 189m Os. All of these nuclides by internal transition or electron capture, which yields conversion and Auger electrons, and it should be possible to produce most of them in therapeutic amounts. The five low-energy electron-emitting radionuclides identified may be relevant in the radiation treatment of small tumours, especially if bound to internalizing radiopharmaceuticals

  14. Emittance and damping of electrons in the neighborhood of resonance fixed points

    International Nuclear Information System (INIS)

    Crosbie, E.A.

    1993-01-01

    The stable fixed points generated by nonlinear field harmonics in a cyclic lattice define a multiturn stable orbit. The position of the orbit for each turn in each magnet of the lattice determines the betatron tunes and lattice dispersion functions describing the linear motion of charged particles with respect to the stable orbit. Since the position of the fixed points is dependent in part on the central orbit tune, it turns out that the multiturn orbit dispersion function depends to a large extent on the central orbit chromaticity. In particular, the horizontal partition number can be made to vary from values less than zero (horizontal antidamping for electrons) to values greater than three (longitudinal antidamping). The central orbit chromaticity therefore plays a major role in determining the characteristic emittance of an electron beam with respect to the multiturn orbit

  15. Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

    Science.gov (United States)

    Zhang, Chendong; Li, Ming-Yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

    2018-02-01

    Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

  16. Structural stability of coplanar 1T-2H superlattice MoS2 under high energy electron beam

    Science.gov (United States)

    Reshmi, S.; Akshaya, M. V.; Satpati, Biswarup; Basu, Palash Kumar; Bhattacharjee, K.

    2018-05-01

    Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS2 layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS2. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS2 sheets.

  17. Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors.

    Science.gov (United States)

    Matsunaga, Masahiro; Higuchi, Ayaka; He, Guanchen; Yamada, Tetsushi; Krüger, Peter; Ochiai, Yuichi; Gong, Yongji; Vajtai, Robert; Ajayan, Pulickel M; Bird, Jonathan P; Aoki, Nobuyuki

    2016-10-05

    Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS 2 ), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices. Quite surprisingly, these modifications are induced by even the relatively low electron doses used in conventional electron-beam lithography, which are found to induce compressive strain in the atomically thin MoS 2 . Likely arising from sulfur-vacancy formation in the exposed regions, the strain gives rise to a local widening of the MoS 2 bandgap, an idea that is supported both by our experiment and by the results of first-principles calculations. A nanoscale potential barrier develops at the boundary between exposed and unexposed regions and may cause extrinsic variations in the resulting electrical characteristics exhibited by the transistor. The widespread use of electron-beam lithography in nanofabrication implies that the presence of such strain must be carefully considered when seeking to harness the potential of atomically thin transistors. At the same time, this work also promises the possibility of exploiting the strain as a means to achieve "bandstructure engineering" in such devices.

  18. Observation of Electron Cloud Instabilities and Emittance Dilution at the Cornell Electron-Positron Storage Ring Test Accelerator

    International Nuclear Information System (INIS)

    Holtzapple, R.L.; Campbell, R.C.; McArdle, K.E.; Miller, M.I.; Totten, M.M.; Tucker, S.L.; Billing, M.G.; Dugan, G.F.; Ramirez, G.A.; Sonnad, K.G.; Williams, H.A.; Flanagan, J.; Palmer, M.A.

    2016-01-01

    Electron cloud related emittance dilution and instabilities of bunch trains limit the performance of high intensity circular colliders. One of the key goals of the Cornell electron-positron storage ring Test Accelerator (CesrTA) research program is to improve our understanding of how the electron cloud alters the dynamics of bunches within the train. Single bunch beam diagnotics have been developed to measure the beam spectra, vertical beam size, two important dynamical effects of beams interacting with the electron cloud, for bunch trains on a turn-by-turn basis. Experiments have been performed at CesrTA to probe the interaction of the electron cloud with stored positron bunch trains. The purpose of these experiments was to characterize the dependence of beam-electron cloud interactions on the machine parameters such as bunch spacing, vertical chromaticity, and bunch current. The beam dynamics of the stored beam, in the presence of the electron cloud, was quantified using: 1) a gated beam position monitor (BPM) and spectrum analyzer to measure the bunch-by-bunch frequency spectrum of the bunch trains; 2) an x-ray beam size monitor to record the bunch-by-bunch, turn-by-turn vertical size of each bunch within the trains. In this paper we report on the observations from these experiments and analyze the effects of the electron cloud on the stability of bunches in a train under many different operational conditions

  19. Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays

    Science.gov (United States)

    Lo, Hsiang-Yu; Li, Yiming; Tsai, Chih-Hao; Pan, Fu-Ming

    2008-04-01

    We study the field emission (FE) property of a nanometer-scale gap structure in a palladium strip, which was fabricated by hydrogen absorption under high-pressure treatment. A vigorous cracking process could be accompanied by extensive atomic migration during the hydrogen treatment. A three-dimensional finite-difference time-domain particle-in-cell method is adopted to simulate the electron emission in a surface-conduction electron-emitter display (SED) device. Examinations of conducting characteristics, FE efficiency, the local field around the emitter, and the current density on the anode plate with one FE emitter are conducted. The image of a light spot is successfully produced on a phosphor plate, which implies that the explored electrode with nanometer separation possesses a potential SED application. Experimental observation and numerical simulation show that the proposed structure can be used as a surface conduction electron emitter and has a high FE efficiency with low turn-on voltage and a different electron emission mechanism. This study benefits the advanced SED design for a new type of electron source.

  20. Low emittance design of the electron gun and the focusing channel of the Compact Linear Collider drive beam

    Directory of Open Access Journals (Sweden)

    M. Dayyani Kelisani

    2017-04-01

    Full Text Available For the Compact Linear Collider project at CERN, the power for the main linacs is extracted from a drive beam generated from a high current electron source. The design of the electron source and its subsequent focusing channel has a great impact on the beam dynamic considerations of the drive beam. We report the design of a thermionic electron source and the subsequent focusing channels with the goal of production of a high quality beam with a very small emittance.

  1. Characterization of electron bunches from field emitter array cathodes for use in next-generation x-ray free electron lasers

    International Nuclear Information System (INIS)

    Leemann, S. C.

    2007-01-01

    PSI is interested in developing an x-ray free electron laser (X-FEL) as a companion radiation source to the existing Swiss Light Source. In order to achieve radiation wavelengths as low as 1 Α, the X-FEL requires excellent electron beam quality and high beam energy. The energy requirements and thus the size and cost of the project can be reduced considerably if an ultra-low emittance electron source is developed. Therefore PSI has started the Low Emittance Gun Project with the aim to design a novel type of electron source that will deliver an electron beam with unprecedented emittance at high peak currents to the linear accelerator of the proposed X-FEL. A source candidate for such a gun is field emission from cold cathodes. In order to gain first experience with field emission guns, investigate the dynamics of space charge dominated electron beams and to develop diagnostics capable of resolving ultra-low emittances, it was decided to build a 100 keV DC gun test stand. In the scope of this thesis, the test stand has been designed, assembled and commissioned. For the first time, transverse phase space measurements of bunches emitted by field emitter arrays in pulsed DC accelerating fields have been performed. (author)

  2. Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals

    Science.gov (United States)

    Gehlmann, Mathias; Aguilera, Irene; Bihlmayer, Gustav; Młyńczak, Ewa; Eschbach, Markus; Döring, Sven; Gospodarič, Pika; Cramm, Stefan; Kardynał, Beata; Plucinski, Lukasz; Blügel, Stefan; Schneider, Claus M.

    2016-06-01

    Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS2 bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES), we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method, we find that these valence band states at the point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS2, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS2 can be accessed without thinning it down to the monolayer limit.

  3. Electronic properties of in-plane phase engineered 1T'/2H/1T' MoS2

    Science.gov (United States)

    Thakur, Rajesh; Sharma, Munish; Ahluwalia, P. K.; Sharma, Raman

    2018-04-01

    We present the first principles studies of semi-infinite phase engineered MoS2 along zigzag direction. The semiconducting (2H) and semi-metallic (1T') phases are known to be stable in thin-film MoS2. We described the electronic and structural properties of the infinite array of 1T'/2H/1T'. It has been found that 1T'phase induced semi-metallic character in 2H phase beyond interface but, only Mo atoms in 2H phase domain contribute to the semi-metallic nature and S atoms towards semiconducting state. 1T'/2H/1T' system can act as a typical n-p-n structure. Also high holes concentration at the interface of Mo layer provides further positive potential barriers.

  4. Effects of pulse-length and emitter area on virtual cathode formation in electron guns

    International Nuclear Information System (INIS)

    Valfells, Agust; Feldman, D.W.; Virgo, M.; O'Shea, P.G.; Lau, Y.Y.

    2002-01-01

    Recent experiments at the University of Maryland using photoemission from a dispenser cathode have yielded some interesting results regarding the effects of the area of emission and of the ratio between the pulse length and the gap transit time on the amount of current that may be drawn from an electron gun before a virtual cathode forms. The experiments show that a much higher current density may be drawn from a short pulse or limited emitter area than is anticipated by the Child-Langmuir limiting current. There is also evidence that the current may be increased even after virtual cathode formation, which leads a distinction between a limiting current density and a current density critical for virtual cathode formation. The experiments have also yielded some interesting results on the longitudinal structure of the current pulse passed through the anode. Some empirical and theoretical scaling laws regarding the formation of virtual cathodes in an electron gun will be presented. This work was motivated by the needs of the University of Maryland Electron Ring (UMER) [P. G. O'Shea, M. Reiser, R. A. Kishek et al., Nucl. Instrum. Methods Phys. Res. A 464, 646 (2001)] where the goal is to generate pulses that are well-localized in time and space

  5. Initial observations of high-charge, low-emittance electron beams at HIBAF (High Brightness Accelerator FEL)

    Energy Technology Data Exchange (ETDEWEB)

    Lumpkin, A.H.; Feldman, R.B.; Carsten, B.E.; Feldman, D.W.; Sheffield, R.L.; Stein, W.E.; Johnson, W.J.; Thode, L.E.; Bender, S.C.; Busch, G.E.

    1990-01-01

    We report our initial measurements of bright (high-charge, low-emittance) electron beams generated at the Los Alamos High Brightness Accelerator FEL (HIBAF) Facility. Normalized emittance values of less than 50 {pi} mm-mrad for charges ranging from 0.7 to 8.7 nC were obtained for single micropulses at a y-waist and at an energy of 14.7 MeV. These measurements were part of the commissioning campaign on the HIBAF photoelectric injector. Macropulse measurements have also been performed and are compared with PARMELA simulations. 5 refs., 8 figs., 3 tabs.

  6. Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

    Science.gov (United States)

    Rotunno, E.; Fabbri, F.; Cinquanta, E.; Kaplan, D.; Longo, M.; Lazzarini, L.; Molle, A.; Swaminathan, V.; Salviati, G.

    2016-06-01

    MoS2 multi-layer flakes, exfoliated from geological molybdenite, have been exposed to high dose electron irradiation showing clear evidence of crystal lattice and stoichiometry modifications. A massive surface sulfur depletion is induced together with the consequent formation of molybdenum nanoislands. It is found that a nanometric amorphous carbon layer, unwillingly deposited during the transmission electron microscope experiments, prevents the formation of the nanoislands. In the absence of the carbon layer, the formation of molybdenum grains proceeds both on the top and bottom surfaces of the flake. If carbon is present on both the surfaces then the formation of Mo grains is completely prevented.

  7. Measurement of transverse emittance at the source of spin-polarized electrons at the S-DALINAC

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, Christian; Barday, Roman; Bonnes, Uwe; Eichhorn, Ralf; Enders, Joachim; Hessler, Christoph; Patalakha, Oleksandr; Platz, Markus; Poltoratska, Yuliya; Rick, Wolfgang [Institut fuer Kernphysik, TU Darmstadt (Germany); Ackermann, Wolfgang; Mueller, Wolfgang F.O.; Steiner, Bastian; Weiland, Thomas [Institut fuer Theorie Elektromagnetischer Felder, TU Darmstadt (Germany)

    2008-07-01

    A new injector concept for 100 keV spin-polarized electrons (SPIN) at the S-DALINAC has been developed. The transverse emittance was measured for beam characterization. The emittance is a quantity concerning the quality of the beam, describing the phase space area. Determination of the emittance requires measurement of the beam profile and knowledge of the focal length of a beam focussing device. A wire scanner unit consisting of two 50 {mu}m diameter tungsten wires is used for the beam-profile measurement. Data analysis is performed by fitting a gaussian model distribution to estimate the 1{sigma} beam radius. Each determined beam width is correlated to the corresponding focal length of a magnetic lens, and a parabola fit is applied to calculate the parameters of the {sigma}-matrix. The square root of the determinant of the {sigma}-matrix defines the emittance. The results of the calculation are presented and the emittance is compared to theoretical estimates.

  8. Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

    2012-01-01

    The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

  9. Emittance growth due to static and radiative space charge forces in an electron bunch compressor

    Directory of Open Access Journals (Sweden)

    Richard Talman

    2009-01-01

    Full Text Available Evolution of short intense electron bunches passing through bunch-compressing beam lines is studied using the UAL (Unified Accelerator Libraries string space charge formulation [R. Talman, Phys. Rev. ST Accel. Beams 7, 100701 (2004PRABFM1098-440210.1103/PhysRevSTAB.7.100701; N. Malitsky and R. Talman, in Proceedings of the 9th European Particle Accelerator Conference, Lucerne, 2004 (EPS-AG, Lucerne, 2004; R. Talman, Accelerator X-Ray Sources (Wiley-VCH, Weinheim, 2006, Chap. 13]. Three major configurations are studied, with the first most important and studied in greatest detail (because actual experimental results are available and the same results have been simulated with other codes: (i Experimental bunch compression results were obtained at CTF-II, the CERN test facility for the “Compact Linear Collider” using electrons of about 40 MeV. Previous simulations of these results have been performed (using TraFiC4* [A. Kabel et al., Nucl. Instrum. Methods Phys. Res., Sect. A 455, 185 (2000NIMAER0168-900210.1016/S0168-9002(0000729-4] and ELEGANT [M. Borland, Argonne National Laboratory Report No. LS-287, 2000]. All three simulations are in fair agreement with the data except that the UAL simulation predicts a substantial dependence of horizontal emittance ϵ_{x} on beam width (as controlled by the lattice β_{x} function at the compressor location. This is consistent with the experimental observations, but inconsistent with other simulations. Excellent agreement concerning dependence of bunch energy loss on bunch length and magnetic field strength [L. Groening et al., in Proceedings of the Particle Accelerator Conference, Chicago, IL, 2001 (IEEE, New York, 2001, http://groening.home.cern/groening/csr_00.htm] confirms our understanding of the role played by coherent synchrotron radiation (CSR. (ii A controlled comparison is made between the predictions of the UAL code and those of CSRTrack [M. Dohlus and T. Limberg, in Proceedings of the

  10. Magnetic field dependence of electronic properties of MoS2 quantum dots with different edges

    Science.gov (United States)

    Chen, Qiao; Li, L. L.; Peeters, F. M.

    2018-02-01

    Using the tight-binding approach, we investigate the energy spectrum of square, triangular, and hexagonal MoS2 quantum dots (QDs) in the presence of a perpendicular magnetic field. Novel edge states emerge in MoS2 QDs, which are distributed over the whole edge which we call ring states. The ring states are robust in the presence of spin-orbit coupling (SOC). The corresponding energy levels of the ring states oscillate as a function of the perpendicular magnetic field which are related to Aharonov-Bohm oscillations. Oscillations in the magnetic field dependence of the energy levels and the peaks in the magneto-optical spectrum emerge (disappear) as the ring states are formed (collapsed). The period and the amplitude of the oscillation decrease with the size of the MoS2 QDs.

  11. Simulation study of electron cloud induced instabilities and emittance growth for the CERN Large Hadron Collider proton beam

    CERN Document Server

    Benedetto, Elena; Schulte, Daniel; Rumolo, Giovanni

    2005-01-01

    The electron cloud may cause transverse single-bunch instabilities of proton beams such as those in the Large Hadron Collider (LHC) and the CERN Super Proton Synchrotron (SPS). We simulate these instabilities and the consequent emittance growth with the code HEADTAIL, which models the turn-by-turn interaction between the cloud and the beam. Recently some new features were added to the code, in particular, electric conducting boundary conditions at the chamber wall, transverse feedback, and variable beta functions. The sensitivity to several numerical parameters has been studied by varying the number of interaction points between the bunch and the cloud, the phase advance between them, and the number of macroparticles used to represent the protons and the electrons. We present simulation results for both LHC at injection and SPS with LHC-type beam, for different electron-cloud density levels, chromaticities, and bunch intensities. Two regimes with qualitatively different emittance growth are observed: above th...

  12. Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Hieu, Nguyen V.; Thu, Tran V.; Hung, Nguyen M.; Ilyasov, Victor V.; Poklonski, Nikolai A.; Nguyen, Chuong V.

    2018-01-01

    In this paper, we studied the electronic properties, effective masses, and carrier mobility of monolayer MoS_2 using density functional theory calculations. The carrier mobility was considered by means of ab initio calculations using the Boltzmann transport equation coupled with deformation potential theory. The effects of mechanical biaxial strain on the electronic properties, effective mass, and carrier mobility of monolayer MoS_2 were also investigated. It is demonstrated that the electronic properties, such as band structure and density of state, of monolayer MoS_2 are very sensitive to biaxial strain, leading to a direct-indirect transition in semiconductor monolayer MoS_2. Moreover, we found that the carrier mobility and effective mass can be enhanced significantly by biaxial strain and by lowering temperature. The electron mobility increases over 12 times with a biaxial strain of 10%, while the carrier mobility gradually decreases with increasing temperature. These results are very useful for the future nanotechnology, and they make monolayer MoS_2 a promising candidate for application in nanoelectronic and optoelectronic devices.

  13. Electron field emission characteristics of graphene/carbon nanotubes hybrid field emitter

    International Nuclear Information System (INIS)

    Chen, Leifeng; He, Hong; Yu, Hua; Cao, Yiqi; Lei, Da; Menggen, QiQiGe; Wu, Chaoxing; Hu, Liqin

    2014-01-01

    The graphene (GP) and multi-walled carbon nanotubes (MCNTs) hybrid nanostructure emitter was constructed by a larger scale electrophoretic deposition (EPD) method. The field emission (FE) performance of the hybrid emitter is greatly improved compared with that of only GP or MCNTs emitter. The low turn-on electric field (EF), the low threshold EF and the reliability FE properties are obtained from the hybrid emitter. The better FE properties result from the improved electrical properties. For further enhancement FE of hybrids, Ag Nanoparticles (NPs) were decorated on the hybrids and FE characteristics were also studied. These studies indicate that we can use the hybrid nanostructure to improve conductivity and contact resistance, which results in enhancement of the FE properties

  14. Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram; Nath, Digbijoy N. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Khurgin, Jacob B. [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2016-05-09

    We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

  15. Investigation of slice emittance using an energy-chirped electron beam in a dispersive section for photo injector characterization at PITZ

    Energy Technology Data Exchange (ETDEWEB)

    Ivanisenko, Yevgeniy

    2012-06-15

    This work describes a transverse slice emittance diagnostics with an RMS temporal resolution down to 2 ps that was implemented at the Photo Injector Test facility in Zeuthen (PITZ). The measurements were performed for several bunch charges generated by a laser pulse that has a flat-top temporal profile of 21-22 ps FWHM duration. This diagnostics allows to study the beam projected emittance compensation with a solenoid magnetic field experimentally and therefore contributes to the beam emittance optimization for the needs of short wavelength linac-based FELs in particular. The diagnostics is based upon the usage of electron bunches which have a correlation between the longitudinal position and the momentum of the bunch particles. This property allows to convert the bunch longitudinal distribution into a transverse one in a dipole magnet. A slit with a narrow opening at the dipole exit selects a fraction of the particle ensemble, a slice, which emittance is analyzed at a screen downstream. Slit scan and quadrupole scan techniques can be used to measure the emittance of the slices. In the experiments it was found that the slice emittance values are 5-10% lower than the projected emittance values, indicating a good effectivity of the solenoid compensation. The emittance obtained using quadrupole scan technique has shown different results when compared to slit scan technique due to a beam halo. The observed beam halo in phase space contributes up to 40% of the emittance value while having only 10% of the bunch charge.

  16. Investigation of slice emittance using an energy-chirped electron beam in a dispersive section for photo injector characterization at PITZ

    International Nuclear Information System (INIS)

    Ivanisenko, Yevgeniy

    2012-06-01

    This work describes a transverse slice emittance diagnostics with an RMS temporal resolution down to 2 ps that was implemented at the Photo Injector Test facility in Zeuthen (PITZ). The measurements were performed for several bunch charges generated by a laser pulse that has a flat-top temporal profile of 21-22 ps FWHM duration. This diagnostics allows to study the beam projected emittance compensation with a solenoid magnetic field experimentally and therefore contributes to the beam emittance optimization for the needs of short wavelength linac-based FELs in particular. The diagnostics is based upon the usage of electron bunches which have a correlation between the longitudinal position and the momentum of the bunch particles. This property allows to convert the bunch longitudinal distribution into a transverse one in a dipole magnet. A slit with a narrow opening at the dipole exit selects a fraction of the particle ensemble, a slice, which emittance is analyzed at a screen downstream. Slit scan and quadrupole scan techniques can be used to measure the emittance of the slices. In the experiments it was found that the slice emittance values are 5-10% lower than the projected emittance values, indicating a good effectivity of the solenoid compensation. The emittance obtained using quadrupole scan technique has shown different results when compared to slit scan technique due to a beam halo. The observed beam halo in phase space contributes up to 40% of the emittance value while having only 10% of the bunch charge.

  17. Development of DNA-based radiopharmaceuticals carrying Auger-electron emitters for anti-gene radiotherapy

    International Nuclear Information System (INIS)

    Panyutin, I.G.; Winters, T.A.; Feinendegen, L.E.; Neumann, R.D.

    2000-01-01

    Targeting of radiation damage to specific DNA sequences is the essence of antigene radiotherapy. This technique also provides a tool to study molecular mechanisms of DNA repair on a defined, single radio damaged site. It was achieved such sequence-specific radio damage by combining the highly localized DNA damage produced by the decay of Auger-electron-emitters such as 125 I with the sequence-specific action of triplex-forming oligonucleotides (TFO). TFO complementary to polypurine-polypyrimidine regions of human genes were synthesized and labeled with 125 I-dCTP by the primer extension method. 125 I-TFO were delivered into cells with several delivery systems. In addition, human enzymes capable of supporting DNA single-strand-break repair were isolated and assessed for their role in the repair of this lesion. Also, the mutagenicity and repairability of 125 I-TFO-induced double strand breaks (DSB) were assessed by repair of plasmid possessing a site-specific DSB lesion. Using plasmids containing target polypurine-polypyrimidine tracts, it was obtained the fine structure of sequence-specific DNA breaks produced by decay of 125 I with single-nucleotide resolution. It was showed that the designed 125 I-TFO in nanomolar concentrations could bind to and introduce double-strand breaks into the target sequences in situ, i.e., within isolated nuclei and intact digitonin-permeabilized cells. It was also showed 125 I-TFO-induced DSB to be highly mutagenic lesions resulting in a mutation frequency of nearly 80%, with deletions comprising the majority of mutations. The results obtained demonstrate the ability of 125 I-TFO to target specific sequences in their natural environment - within eukaryotic nucleus. Repair of 125 I-TFO-induced DNA damage should typically result in mutagenic gene inactivation

  18. Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

    Science.gov (United States)

    Brucker, G. J.; Van Gunten, O.; Stassinopoulos, E. G.; Shapiro, P.; August, L. S.; Jordan, T. M.

    1983-01-01

    This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

  19. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  20. Measurement of concentrations of {gamma}-ray emitters induced in the concrete shield of the JAERI electron linac facility

    Energy Technology Data Exchange (ETDEWEB)

    Endo, Akira; Kawasaki, Katsuya; Kikuchi, Masamitsu [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Harada, Yasunori

    1997-07-01

    Measurement has been made to study distributions of {gamma}-ray emitters induced in the concrete shield of the JAERI electron linac facility. Core boring was carried out at seven positions to take samples from the concrete shield, and {gamma}-ray counting rates and {gamma}-ray spectra of these samples were measured with a NaI(Tl) detector and a Ge semiconductor detector, respectively. The following radionuclides were detected in the concrete samples: {sup 60}Co, {sup 134}Cs, {sup 152}Eu and {sup 154}Eu generated through thermal neutron capture reaction, and {sup 22}Na and {sup 54}Mn generated through nuclear reactions by bremsstrahlung and fast neutrons. The relation between the distributions of {gamma}-ray emitters, as a function of the depth of concrete, and the positions of core boring is discussed. (author)

  1. Double Emittance Exchanger as a Bunch Compressor for the MaRIE XFEL electron beam line at 1GeV

    Energy Technology Data Exchange (ETDEWEB)

    Malyzhenkov, Alexander [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Northern Illinois Univ., DeKalb, IL (United States); Yampolsky, Nikolai [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carlsten, Bruce Eric [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-09-22

    We demonstrate an alternative realization of a bunch compressor (specifically the second bunch compressor for the MaRIE XFEL beamline, 1GeV electron energy) using a double emittance exchanger (EEX) and a telescope in the transverse phase space.We compare our results with a traditional bunch compressor realized via chicane, taking into account the nonlinear dynamics, Coherent Synchrotron Radiation (CSR) and Space Charge (SC) effects. In particular, we use the Elegant code for tracking particles through the beam line and analyze the eigen-emittances evolution to separate the influence of the CSR/SC effects from the nonlinear dynamics effects. We optimize the scheme parameters to reach a desirable compression factor and minimize the emittance growth. We observe dominant CSR-effects in our scheme resulting in critical emittance growth and introduce alternative version of an emittance exchanger with a reduced number of bending magnets to minimize the impact of CSR effects.

  2. Electron emission from nano-structured carbon composite materials and fabrication of high-quality electron emitters by using plasma technology

    International Nuclear Information System (INIS)

    Hiraki, H.; Hiraki, A.; Jiang, N.; Wang, H. X.

    2006-01-01

    Many trials have been done to fabricate high-quality electron-emitters from nano-composite carbon materials (such as nano-diamond, carbon nano tubes and others) by means of a variety of plasma chemical-vapor-deposition (CVD) techniques. Based upon the mechanism of electron emission, we have proposed several strategic guide lines for the fabrication of good emitters. Then, following these lines, several types of emitters were tried. One of the emitters has shown a worldclass, top ranking for fabricating very bright lamps: namely, a low turn-on voltage (0.5 ∼ 1 V/μm to induce 10 μA/cm 2 emission current) to emit a 1 mA/cm 2 current at 3 V/μm and 100 mA/cm 2 current at a slightly higher applied voltage. The bright lamps are Mercury-free fluorescence lamps to exhibit brightness of ∼10 5 cd/m 2 with high efficiency of ∼100 lm/w.

  3. An asymmetric emittance electron source for the GALAXIE dielectric-laser accelerator injector

    Energy Technology Data Exchange (ETDEWEB)

    Valloni, A.; Cahill, A.; Fukusawa, A.; Musumeci, P.; Spataro, B.; Yakub, A.; Rosenzweig, J. B. [Dept. of Physics and Astronomy, University of California, Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90034 (United States); Accelerator Division, Laboratori Nazionali di Frascati (INFN-LNF), Via E. Fermi 40, Frascati (RM) 00044 (Italy); Dept. of Physics and Astronomy, University of California, Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90034 (United States)

    2012-12-21

    The GALAXIE project is a program to develop an all-optical, very high field accelerator and undulator integrated SASE FEL system based on dielectric laser-excited structures that support >GV/m fields. These structures are very wide in one direction to allow adequate charge given beam loading considerations, but also having small (subwavelength) apertures in the narrow direction. Such small vertical dimensions yield strict restrictions on the emittance in this direction, while no such constraint exists in the wide transverse direction. However, the overall beam brightness is restricted by the performance requirements on the FEL. To meet these demands, we are studying a very high field gun with a magnetized cathode, yielding a beam with angular momentum content. This beam is then subject to a skew-quad triplet that splits the emittances; this process is reversed to give a round beam after acceleration. This symmetric emittance beam avoids gain-degrading multiple-transverse-mode operation of the FEL, which also demands that the effects of the angular momentum in the beam be mitigated. In this paper we discuss the RF design of an X-band gun to be operated at {approx}200 MV/m peak field giving a 1 pC magnetized beam with unprecedented brightness. We examine the design of the focusing and skew-quad systems, investigating the associated beam dynamics and efficacy of emittance splitting.

  4. Photoelectron linear accelerator for producing a low emittance polarized electron beam

    Science.gov (United States)

    Yu, David U.; Clendenin, James E.; Kirby, Robert E.

    2004-06-01

    A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.

  5. Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

    KAUST Repository

    Addou, Rafik; McDonnell, Stephen; Barrera, Diego; Guo, Zaibing; Azcatl, Angelica; Wang, Jian; Zhu, Hui; Hinkle, Christopher L.; Quevedo-Lopez, Manuel; Alshareef, Husam N.; Colombo, Luigi; Hsu, Julia W P; Wallace, Robert M.

    2015-01-01

    Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.

  6. Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

    KAUST Repository

    Addou, Rafik

    2015-09-22

    Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.

  7. Comparative study of electronic and magnetic properties of Pc ( = Fe, Co) molecules physisorbed on 2D MoS and graphene

    KAUST Repository

    Haldar, Soumyajyoti; Bhandary, Sumanta; Vovusha, Hakkim; Sanyal, Biplab

    2017-01-01

    In this paper, we have done a comparative study of electronic and magnetic properties of iron phthalocyanine (FePc) and cobalt phthalocyanine (CoPc) molecules physisorbed on monolayer of MoS$_2$ and graphene by using density functional theory

  8. Emittance growth of an electron beam in a periodic channel due to transfer of longitudinal energy to transverse energy

    International Nuclear Information System (INIS)

    Carlsten, B.E.

    1998-01-01

    Most discussions about emittance growth and halo production for an intense electron beam in a periodic focusing channel assume that the total transverse energy is constant (or, in other words, that the transverse and longitudinal Hamiltonians are separable). Previous analyses that include variations in the total transverse energy are typically based on a transverse-longitudinal coupling that is either from two-dimensional space-charge modes or particle-particle Coulomb collisions. With the space-charge modes, the energy exchange between the transverse and longitudinal directions is periodic, and of constant magnitude. The total energy transfer for the case of the Coulomb collisions is negligible. This limited increase of energy in the transverse direction from these other effects will limit the amount of transverse emittance growth possible. In this paper, the authors investigate a mechanism in which there is a continual transfer of energy from the longitudinal direction to the transverse direction, leading to essentially unlimited potential transverse emittance growth. This mechanism is caused by an asymmetry of the beam's betatron motion within the periodic focusing elements. This analysis is based on thermodynamic principles. This mechanism exists for both solenoids and quadrupole focusing, although only solenoid focusing is studied here

  9. High-performance flexible inverted organic light-emitting diodes by exploiting MoS2 nanopillar arrays as electron-injecting and light-coupling layers.

    Science.gov (United States)

    Guo, Kunping; Si, Changfeng; Han, Ceng; Pan, Saihu; Chen, Guo; Zheng, Yanqiong; Zhu, Wenqing; Zhang, Jianhua; Sun, Chang; Wei, Bin

    2017-10-05

    Inverted organic light-emitting diodes (IOLEDs) on plastic substrates have great potential application in flexible active-matrix displays. High energy consumption, instability and poor electron injection are key issues limiting the commercialization of flexible IOLEDs. Here, we have systematically investigated the electrooptical properties of molybdenum disulfide (MoS 2 ) and applied it in developing highly efficient and stable blue fluorescent IOLEDs. We have demonstrated that MoS 2 -based IOLEDs can significantly improve electron-injecting capacity. For the MoS 2 -based device on plastic substrates, we have achieved a very high external quantum efficiency of 7.3% at the luminance of 9141 cd m -2 , which is the highest among the flexible blue fluorescent IOLEDs reported. Also, an approximately 1.8-fold improvement in power efficiency was obtained compared to glass-based IOLEDs. We attributed the enhanced performance of flexible IOLEDs to MoS 2 nanopillar arrays due to their light extraction effect. The van der Waals force played an important role in the formation of MoS 2 nanopillar arrays by thermal evaporation. Notably, MoS 2 -based flexible IOLEDs exhibit an intriguing efficiency roll-up, that is, the current efficiency increases slightly from 14.0 to 14.6 cd A -1 with the luminance increasing from 100 to 5000 cd m -2 . In addition, we observed that the initial brightness of 500 cd m -2 can be maintained at 97% after bending for 500 cycles, demonstrating the excellent mechanical stability of flexible IOLEDs. Furthermore, we have successfully fabricated a transparent, flexible IOLED with low efficiency roll-off at high current density.

  10. Emittance study of a 28 GHz electron cyclotron resonance ion source for the Rare Isotope Science Project superconducting linear accelerator.

    Science.gov (United States)

    Park, Bum-Sik; Hong, In-Seok; Jang, Ji-Ho; Jin, Hyunchang; Choi, Sukjin; Kim, Yonghwan

    2016-02-01

    A 28 GHz electron cyclotron resonance (ECR) ion source is being developed for use as an injector for the superconducting linear accelerator of the Rare Isotope Science Project. Beam extraction from the ECR ion source has been simulated using the KOBRA3-INP software. The simulation software can calculate charged particle trajectories in three dimensional complex magnetic field structures, which in this case are formed by the arrangement of five superconducting magnets. In this study, the beam emittance is simulated to understand the effects of plasma potential, mass-to-charge ratio, and spatial distribution. The results of these simulations and their comparison to experimental results are presented in this paper.

  11. Space Charge Correction on Emittance Measurement of Low Energy Electron Beams

    Energy Technology Data Exchange (ETDEWEB)

    Treado, Colleen J.; /Massachusetts U., Amherst

    2012-09-07

    The goal of any particle accelerator is to optimize the transport of a charged particle beam along a set path by confining the beam to a small region close to the design trajectory and directing it accurately along the beamline. To do so in the simplest fashion, accelerators use a system of magnets that exert approximately linear electromagnetic forces on the charged beam. These electromagnets bend the beam along the desired path, in the case of bending magnets, and constrain the beam to the desired area through alternating focusing and defocusing effects, in the case of quadrupole magnets. We can model the transport of such a beam through transfer matrices representing the actions of the various beamline elements. However, space charge effects, produced from self electric fields within the beam, defocus the beam and must be accounted for in the calculation of beam emittance. We present below the preliminary results of a MATLAB code built to model the transport of a charged particle beam through an accelerator and measure the emittance under the influence of space charge effects. We demonstrate the method of correctly calculating the emittance of a beam under space charge effects using a least square fit to determine the initial properties of the beam given the beam size measured at a specific point after transport.

  12. Emittance preservation

    Energy Technology Data Exchange (ETDEWEB)

    Kain, V; Arduini, G; Goddard, B; Holzer, B J; Jowett, J M; Meddahi, M; Mertens, T; Roncarolo, F; Schaumann, M; Versteegen, R; Wenninger, J [European Organization for Nuclear Research, Geneva (Switzerland)

    2012-07-01

    Emittance measurements during the LHC proton run 2011 indicated a blow-up of 20 % to 30 % from LHC injection to collisions. This presentation will show the emittance preservation throughout the different parts of the LHC cycle and discuss the current limitations on emittance determination. An overview of emittance preservation through the injector complex as function of bunch intensity will also be given. Possible sources for the observed blow-up and required tests in 2012 will be presented. Possible improvements of emittance diagnostics and analysis tools for 2012 will be shown.

  13. Generating femtosecond X-ray pulses using an emittance-spoiling foil in free-electron lasers

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Y., E-mail: ding@slac.stanford.edu; Coffee, R.; Decker, F.-J.; Emma, P.; Field, C.; Huang, Z.; Krejcik, P.; Krzywinski, J.; Loos, H.; Lutman, A.; Marinelli, A.; Maxwell, T. J.; Turner, J. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Behrens, C. [Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg (Germany); Helml, W. [Technische Universität München, James-Franck-Straße 1, 85748 Garching (Germany)

    2015-11-09

    Generation of femtosecond to sub-femtosecond pulses is attracting much attention in X-ray free-electron laser user community. One method is to use a slotted, emittance-spoiling foil which was proposed before (P. Emma et al., Phys. Rev. Lett. 92, 074801 (2004)) and has been widely used at the Linac Coherent Light Source. Direct experimental characterization of the slotted-foil performance was previously unfeasible due to a lack of appropriate diagnostics. With a recently installed X-band radio-frequency transverse deflector, we are able to characterize the electron bunch spoiling effect and X-ray pulse when using the slotted foil. We show that few-femtosecond X-ray pulses are generated with flexible control of the single-pulse duration or double-pulse separation with comparison to the theoretical model.

  14. Comparative study of electronic and magnetic properties of Pc ( = Fe, Co) molecules physisorbed on 2D MoS and graphene

    KAUST Repository

    Haldar, Soumyajyoti

    2017-09-13

    In this paper, we have done a comparative study of electronic and magnetic properties of iron phthalocyanine (FePc) and cobalt phthalocyanine (CoPc) molecules physisorbed on monolayer of MoS$_2$ and graphene by using density functional theory. Various different types of physisorption sites have been considered for both surfaces. Our calculations reveal that the $M$Pc molecules prefer the S-top position on MoS$_2$. However, on graphene, FePc molecule prefers the bridge position while CoPc molecule prefers the top position. The $M$Pc molecules are physisorbed strongly on the MoS$_2$ surface than the graphene ($\\\\sim$ 2.5 eV higher physisorption energy). Analysis of magnetic properties indicates the presence of strong spin dipole moment opposite to the spin moment and hence a huge reduction of effective spin moment can be observed. Our calculations of magnetic anisotropy energies using both variational approach and $2^{nd}$ order perturbation approach indicate no significant changes after physisorption. In case of FePc, an out-of-plane easy axis and in case of CoPc, an in-plane easy axis can be seen. Calculations of work function indicate a reduction of MoS$_2$ work function $\\\\sim$ 1 eV due to physisorption of $M$Pc molecules while it does not change significantly in case of graphene.

  15. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu

    2017-09-08

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large-area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band-offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible-range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.

  16. Exploring the electron density localization in single MoS2 monolayers by means of a localize-electrons detector and the quantum theory of atoms in molecules

    Directory of Open Access Journals (Sweden)

    Yosslen Aray

    2017-11-01

    Full Text Available The nature of the electron density localization in a MoS2 monolayer under 0 % to 11% tensile strain has been systematically studied by means of a localized electron detector function and the Quantum Theory of atoms in molecules. At 10% tensile strain, this monolayer become metallic. It was found that for less than 6.5% of applied stress, the same atomic structure of the equilibrium geometry (0% strain is maintained; while over 6.5% strain induces a transformation to a structure where the sulfur atoms placed on the top and bottom layer form S2 groups. The localized electron detector function shows the presence of zones of highly electron delocalization extending throughout the Mo central layer. For less than 10% tensile strain, these zones comprise the BCPs and the remainder CPs in separates regions of the space; while for the structures beyond 10% strain, all the critical points are involved in a region of highly delocalized electrons that extends throughout the material. This dissimilar electron localization pattern is like to that previously reported for semiconductors such as Ge bulk and metallic systems such as transition metals bulk.

  17. Transverse emittance-preserving arc compressor for high-brightness electron beam-based light sources and colliders

    Science.gov (United States)

    Di Mitri, S.; Cornacchia, M.

    2015-03-01

    Bunch length magnetic compression is used in high-brightness linacs driving free-electron lasers (FELs) and particle colliders to increase the peak current of the injected beam. To date, it is performed in dedicated insertions made of few degrees bending magnets and the compression factor is limited by the degradation of the beam transverse emittance owing to emission of coherent synchrotron radiation (CSR). We reformulate the known concept of CSR-driven optics balance for the general case of varying bunch length and demonstrate, through analytical and numerical results, that a 500 pC charge beam can be time-compressed in a periodic 180 deg arc at 2.4 GeV beam energy and lower, by a factor of up to 45, reaching peak currents of up to 2 kA and with a normalized emittance growth at the 0.1 μ \\text{m} rad level. The proposed solution offers new schemes of beam longitudinal gymnastics; an application to an energy recovery linac driving FEL is discussed.

  18. Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons

    International Nuclear Information System (INIS)

    Li, Xin-Mei; Long, Meng-Qiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui

    2014-01-01

    Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS 2 ) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS 2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. - Highlights: • The spin-dependent electronic transport of zigzag MoS 2 nanoribbons. • The effects of V-shaped edge defect and H-saturation. • The effects of spin-filter and negative differential resistance can be observed

  19. Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

    International Nuclear Information System (INIS)

    Hong, Lin-Ann; Vu, Hoang-Tuan; Juang, Fuh-Shyang; Lai, Yun-Jr; Yeh, Pei-Hsun; Tsai, Yu-Sheng

    2013-01-01

    Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm 2 , and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

  20. Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Lin-Ann; Vu, Hoang-Tuan [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Juang, Fuh-Shyang, E-mail: fsjuang@seed.net.tw [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Lai, Yun-Jr [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Yeh, Pei-Hsun [Raystar Optronics, Inc., 5F No. 25, Keya Rd. Daya Township, Taichung County, Taiwan (China); Tsai, Yu-Sheng [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China)

    2013-10-01

    Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm{sup 2}, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

  1. Manipulating the Electronic Excited State Energies of Pyrimidine-Based Thermally Activated Delayed Fluorescence Emitters To Realize Efficient Deep-Blue Emission.

    Science.gov (United States)

    Komatsu, Ryutaro; Ohsawa, Tatsuya; Sasabe, Hisahiro; Nakao, Kohei; Hayasaka, Yuya; Kido, Junji

    2017-02-08

    The development of efficient and robust deep-blue emitters is one of the key issues in organic light-emitting devices (OLEDs) for environmentally friendly, large-area displays or general lighting. As a promising technology that realizes 100% conversion from electrons to photons, thermally activated delayed fluorescence (TADF) emitters have attracted considerable attention. However, only a handful of examples of deep-blue TADF emitters have been reported to date, and the emitters generally show large efficiency roll-off at practical luminance over several hundreds to thousands of cd m -2 , most likely because of the long delayed fluorescent lifetime (τ d ). To overcome this problem, we molecularly manipulated the electronic excited state energies of pyrimidine-based TADF emitters to realize deep-blue emission and reduced τ d . We then systematically investigated the relationships among the chemical structure, properties, and device performances. The resultant novel pyrimidine emitters, called Ac-XMHPMs (X = 1, 2, and 3), contain different numbers of bulky methyl substituents at acceptor moieties, increasing the excited singlet (E S ) and triplet state (E T ) energies. Among them, Ac-3MHPM, with a high E T of 2.95 eV, exhibited a high external quantum efficiency (η ext,max ) of 18% and an η ext of 10% at 100 cd m -2 with Commission Internationale de l'Eclairage chromaticity coordinates of (0.16, 0.15). These efficiencies are among the highest values to date for deep-blue TADF OLEDs. Our molecular design strategy provides fundamental guidance to design novel deep-blue TADF emitters.

  2. The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

    International Nuclear Information System (INIS)

    Flament, O.; Fleetwood, D.M.; Leray, J.L.; Paillet, P.; Riewe, L.C.; Winokur, P.S.

    1999-01-01

    Deep and shallow electron traps form in irradiated thermal SiO 2 as a natural response to hole transport and trapping. The density and stability of these defects are discussed, as are their implications for total-dose modeling

  3. MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

  4. Electron beam and rf characterization of a low-emittance X-band photoinjector

    Directory of Open Access Journals (Sweden)

    D. J. Gibson

    2001-09-01

    Full Text Available Detailed experimental studies of the first operation of an X-band (8.547 GHz rf photoinjector are reported. The rf characteristics of the device are first described, as well as the tuning technique used to ensure operation of the 11/2-cell rf gun in the balanced π-mode. The characterization of the photoelectron beam produced by the rf gun includes: measurements of the bunch charge as a function of the laser injection phase, yielding information about the quantum efficiency of the Cu photocathode ( 2×10^{-5} for a surface field of 100 MV/m; measurements of the beam energy (1.5–2 MeV and relative energy spread ( Δγ/γ_{0}=1.8±0.2% using a magnetic spectrometer; measurements of the beam 90% normalized emittance, which is found to be ɛ_{n}=1.65π mm mrad for a charge of 25 pC; and measurements of the bunch duration ( <2 ps. Coherent synchrotron radiation experiments at Ku-band and Ka-band confirm the extremely short duration of the photoelectron bunch and a peak power scaling quadratically with the bunch charge.

  5. Low emittance photoinjectors

    International Nuclear Information System (INIS)

    Ferrario, Massimo

    2001-01-01

    Photon colliders require high charge polarized electron beams with very low normalized emittances, possibly lower than the actual damping rings design goals. Recent analytical and numerical efforts in understanding beam dynamics in RF photoinjectors have raised again the question as to whether the performances of an RF electron gun based injector could be competitive with respect to a damping ring. As a matter of discussion we report in this paper the most recent results concerning low emittance photoinjector designs: the production of polarized electron beams by DC and/or RF guns is illustrated together with space charge compensation techniques and thermal emittance effects. New ideas concerning multi-gun injection system and generation of flat beams by RF gun are also discussed

  6. An Ultra-Bright Pulsed Electron Beam with Low Longitudinal Emittance

    CERN Document Server

    Zolotorev, Max S; Denes, Peter; Heifets, Samuel; Hussain, Zahid; Lebedev, Gennadi; Lidia, Steven M; Robin, David; Sannibale, Fernando; Schönlein, Robert W; Vogel, Robert; Wan, Weishi

    2005-01-01

    We describe a novel scheme for an electron source in the 10 - 100 eV range with the capability of approaching the brightness quantum-limit and of lowering the effective temperature of the electrons orders of magnitude with respect to existing sources. Such a device can open the way for a wide range of novel applications that utilize angstrom-scale spatial resolution and ?eV-scale energy resolution. Possible examples include electron microscopy, electron holography, and investigations of dynamics on a picosecond time scale using pump-probe techniques. In this paper we describe the concepts for such a source including a complete and consistent set of parameters for the construction of a real device based on the presented scheme.

  7. Experimental Development of Low-emittance Field-emission Electron Sources

    Energy Technology Data Exchange (ETDEWEB)

    Lueangaranwong, A. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Buzzard, C. [Northern Illinois Univ., DeKalb, IL (United States); Divan, R. [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Korampally, V. [Northern Illinois Univ., DeKalb, IL (United States); Piot, P. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2016-10-10

    Field emission electron sources are capable of extreme brightness when excited by static or time-dependent electro- magnetic fields. We are currently developing a cathode test stand operating in DC mode with possibility to trigger the emission using ultra-short (~ 100-fs) laser pulses. This contribution describes the status of an experiment to investigate field-emission using cathodes under development at NIU in collaboration with the Argonne’s Center for Nanoscale Materials.

  8. Development of low emittance high brightness electron beams and rf accelerating structures

    International Nuclear Information System (INIS)

    Pellegrini, C.

    1991-01-01

    The main goals of this project were the construction of an S-band RF photoinjector for the production of a high brightness electron beam, and the development of a new type of RF accelerator structure; the Plane wave transformer. By the end of October 1991 the photoinjector had been built, its RF characteristics had been measured at low power, and an initial test of the gun at high RF power had been done. The Plane Wave Transformer had also been built and tested at lower power. In both cases the results obtained are mostly in agreement with the expected and calculated behavior

  9. Emittance growth due to static and radiative space charge forces in an electron bunch compressor

    CERN Document Server

    Talman, Richard; Stulle, Frank

    2009-01-01

    Evolution of short intense electron bunches passing through bunch-compressing beam lines is studied using the UAL (Unified Accelerator Libraries) string space charge formulation [R. Talman, Phys. Rev. ST Accel. Beams 7, 100701 (2004); N. Malitsky and R. Talman, in Proceedings of the 9th European Particle Accelerator Conference, Lucerne, 2004 (EPS-AG, Lucerne, 2004); R. Talman, Accelerator X-Ray Sources (Wiley-VCH, Weinheim, 2006), Chap. 13]. Three major configurations are studied, with the first most important and studied in greatest detail (because actual experimental results are available and the same results have been simulated with other codes): (i) Experimental bunch compression results were obtained at CTF-II, the CERN test facility for the “Compact Linear Collider” using electrons of about 40 MeV. Previous simulations of these results have been performed (using trafic4* [A. Kabel et al., Nucl. Instrum. Methods Phys. Res., Sect. A 455, 185 (2000)] and elegant [M. Borland, Argonne National Laboratory...

  10. Evaluation of new iodinated acridine derivatives for targeted radionuclide therapy of melanoma using {sup 125}I, an Auger electron emitter

    Energy Technology Data Exchange (ETDEWEB)

    Gardette, M.; Papon, J.; Bonnet, M.; Labarre, P.; Miot-Noirault, E.; Madelmont, J. C.; Chezal, J. M.; Moins, N. [UMR 990, INSERM, Universite d' Auvergne, Clermont-Ferrand (France); Desbois, N. [EA 3660, Universite de Bourgogne, Dijon (France); Wu, T. D.; Guerquin-Kern, J. L. [U 759 INSERM, Institute Curie, Orsay (France)

    2013-06-01

    The full text of the publication follows. The increasing incidence of melanoma and the lack of effective therapy on the disseminated form have led to an urgent need for new specific therapies. Several iodo-benzamides or analogs are known to possess specific affinity for melanoma tissue. New hetero-aromatic derivatives have been designed with a cytotoxic moiety and termed DNA intercalating agents. These compounds could be applied in targeted radionuclide therapy using {sup 125}I, Auger electrons emitter which gives high-energetic localized irradiation. Two iodinated acridine derivatives have been reported to present an in vivo kinetic profile conducive to application in targeted radionuclide therapy. The aim of the present study was to perform a preclinical evaluation of these compounds. The DNA intercalating property was confirmed for both compounds. After radiolabeling with {sup 125}I, the two compounds induced in vitro a significant radiotoxicity on B16F0 melanoma cells. The acridine compound, ICF01040, appeared more radio toxic than the acridone compound, ICF01035. While cellular uptake was similar for both compounds, SIMS analysis and in vitro protocol showed a stronger affinity for melanin with ICF01035, which was able to induce a predominant scavenging process in the melanosome and restrict access to the nucleus. Nevertheless, an important radiotoxicity was measured for the two compounds while the nuclear accumulation was low. Indeed, even if nuclear localization remains the main target sensitive to Auger electrons, the cell membrane remains sensitive to {sup 125}I decays. So, these compounds may induce secondary toxic effects of irradiation, such as membrane lipid damage. Conducted to current experiments are evaluate such hypothesis. Taken together, these results suggest that ICF01040 is a better candidate for application in targeted radionuclide therapy using {sup 125}I. The next step will be in vivo evaluation, where high tumoral vectorization gives

  11. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Frank, H.; Petr, I.

    1977-01-01

    The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

  12. The low-energy β(-) and electron emitter (161)Tb as an alternative to (177)Lu for targeted radionuclide therapy.

    Science.gov (United States)

    Lehenberger, Silvia; Barkhausen, Christoph; Cohrs, Susan; Fischer, Eliane; Grünberg, Jürgen; Hohn, Alexander; Köster, Ulli; Schibli, Roger; Türler, Andreas; Zhernosekov, Konstantin

    2011-08-01

    The low-energy β(-) emitter (161)Tb is very similar to (177)Lu with respect to half-life, beta energy and chemical properties. However, (161)Tb also emits a significant amount of conversion and Auger electrons. Greater therapeutic effect can therefore be expected in comparison to (177)Lu. It also emits low-energy photons that are useful for gamma camera imaging. The (160)Gd(n,γ)(161)Gd→(161)Tb production route was used to produce (161)Tb by neutron irradiation of massive (160)Gd targets (up to 40 mg) in nuclear reactors. A semiautomated procedure based on cation exchange chromatography was developed and applied to isolate no carrier added (n.c.a.) (161)Tb from the bulk of the (160)Gd target and from its stable decay product (161)Dy. (161)Tb was used for radiolabeling DOTA-Tyr3-octreotate; the radiolabeling profile was compared to the commercially available n.c.a. (177)Lu. A (161)Tb Derenzo phantom was imaged using a small-animal single-photon emission computed tomography camera. Up to 15 GBq of (161)Tb was produced by long-term irradiation of Gd targets. Using a cation exchange resin, we obtained 80%-90% of the available (161)Tb with high specific activity, radionuclide and chemical purity and in quantities sufficient for therapeutic applications. The (161)Tb obtained was of the quality required to prepare (161)Tb-DOTA-Tyr3-octreotate. We were able to produce (161)Tb in n.c.a. form by irradiating highly enriched (160)Gd targets; it can be obtained in the quantity and quality required for the preparation of (161)Tb-labeled therapeutic agents. Copyright © 2011 Elsevier Inc. All rights reserved.

  13. Shielding in ungated field emitter arrays

    Energy Technology Data Exchange (ETDEWEB)

    Harris, J. R. [U.S. Navy Reserve, Navy Operational Support Center New Orleans, New Orleans, Louisiana 70143 (United States); Jensen, K. L. [Code 6854, Naval Research Laboratory, Washington, D.C. 20375 (United States); Shiffler, D. A. [Directed Energy Directorate, Air Force Research Laboratory, Albuquerque, New Mexico 87117 (United States); Petillo, J. J. [Leidos, Billerica, Massachusetts 01821 (United States)

    2015-05-18

    Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can be used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 10{sup 2}–10{sup 4} are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.

  14. FACET Emittance Growth

    Energy Technology Data Exchange (ETDEWEB)

    Frederico, J; Hogan, M.J.; Nosochkov, Y.; Litos, M.D.; Raubenheimer, T.; /SLAC

    2011-04-05

    FACET, the Facility for Advanced Accelerator and Experimental Tests, is a new facility being constructed in sector 20 of the SLAC linac primarily to study beam driven plasma wakefield acceleration. The FACET beamline consists of a chicane and final focus system to compress the 23 GeV, 3.2 nC electron bunches to {approx}20 {micro}m long and {approx}10 {micro}m wide. Simulations of the FACET beamline indicate the short-duration and large, 1.5% rms energy spread beams may suffer a factor of four emittance growth from a combination of chromaticity, incoherent synchrotron radiation (ISR), and coherent synchrotron radiation (CSR). Emittance growth is directly correlated to head erosion in plasma wakefield acceleration and is a limiting factor in single stage performance. Studies of the geometric, CSR, and ISR components are presented. Numerical calculation of the rms emittance can be overwhelmed by long tails in the simulated phase space distributions; more useful definitions of emittance are given. A complete simulation of the beamline is presented as well, which agrees with design specifications.

  15. FACET Emittance Growth

    International Nuclear Information System (INIS)

    Frederico, Joel

    2011-01-01

    FACET, the Facility for Advanced Accelerator and Experimental Tests, is a new facility being constructed in sector 20 of the SLAC linac primarily to study beam driven plasma wakefield acceleration. The FACET beamline consists of a chicane and final focus system to compress the 23 GeV, 3.2 nC electron bunches to ∼20 (micro)m long and ∼10 (micro)m wide. Simulations of the FACET beamline indicate the short-duration and large, 1.5% rms energy spread beams may suffer a factor of four emittance growth from a combination of chromaticity, incoherent synchrotron radiation (ISR), and coherent synchrotron radiation (CSR). Emittance growth is directly correlated to head erosion in plasma wakefield acceleration and is a limiting factor in single stage performance. Studies of the geometric, CSR, and ISR components are presented. Numerical calculation of the rms emittance can be overwhelmed by long tails in the simulated phase space distributions; more useful definitions of emittance are given. A complete simulation of the beamline is presented as well, which agrees with design specifications.

  16. MOS integrated circuit design

    CERN Document Server

    Wolfendale, E

    2013-01-01

    MOS Integral Circuit Design aims to help in the design of integrated circuits, especially large-scale ones, using MOS Technology through teaching of techniques, practical applications, and examples. The book covers topics such as design equation and process parameters; MOS static and dynamic circuits; logic design techniques, system partitioning, and layout techniques. Also featured are computer aids such as logic simulation and mask layout, as well as examples on simple MOS design. The text is recommended for electrical engineers who would like to know how to use MOS for integral circuit desi

  17. Emittance investigation of RF photo-injector

    CERN Document Server

    Yang Mao Rong; Li Zheng; Li Ming; Xu Zhou

    2002-01-01

    A high-power laser beam illuminates a photocathode surface placed on an end wall of an RF cavity. The emitted electrons are accelerated immediately to a relativistic energy by the strong RF find in the cavity. But space charge effect induces beam emittance growth especially near the cathode where the electrons are still nonrelativistic. The author analyzes the factors which lead the transverse emittance growth and method how to resolve this problem. After introducing solenoidal focusing near the photocathode, the beam emittance growth is suppressed dramatically. The beam emittance is given also after compensation and simulation results. The measurements show these results are coincident

  18. Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers

    KAUST Repository

    Zhang, Chendong

    2017-01-07

    By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.

  19. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Peter, I.; Frank, G.

    1977-01-01

    The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

  20. Emittance growth due to the wake field driven by an electron beam accelerated in an RF-gun of free electron laser 'ELSA'

    CERN Document Server

    Salah, W

    2000-01-01

    It appears that the ease of the parameter chosen for 'ELSA' photo injector, the influence of the exit aperture, in terms of beam quality, is slight concerning the transverse emittance: (DELTA epsilon sub p sub e sub r sub p sub e sub n sub d sub i sub c sub u sub l sub a sub r /epsilon sub p sub e sub r sub p sub e sub n sub d sub i sub c sub u sub l sub a sub = = r)(z)approx 3% at maximum, and negligible concerning the axial emittance. To complete this paper, we recall the results previously obtained concerning the wake field of a closed or open cavity for a beam approaching the anode . They had quantitatively specified the expected deep asymmetry between the conducting walls regarding their contribution to the total wake field, besides the space-charge contribution. (Given that the radial walls have no time to contribute, these conducting walls are the cathode and the anode.) Thus, concerning the effects on whole-beam emittances, the correction (DELTA epsilon sub p sub e sub r sub p sub e sub n sub d sub i ...

  1. Faceted MoS2 nanotubes and nanoflowers

    International Nuclear Information System (INIS)

    Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

    2009-01-01

    A simple synthesis of novel faceted MoS 2 nanotubes (NTs) and nanoflowers (NFs) starting from molybdenum oxide and thiourea as the sulphur source is reported. The MoS 2 nanotubes with the faceted morphology have not been observed before. Further the as-synthesized MoS 2 nanotubes have high internal surface area. The nanostructures have been characterized by a variety of electron microscopy techniques. It is expected that these MoS 2 nanostrutures will find important applications in energy storage, catalysis and field emission.

  2. Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

    Science.gov (United States)

    Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

    2018-03-28

    The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

  3. Some applications of Photon/Electron-Rejecting Alpha Liquid Scintillation (PERALS) spectrometry to the assay of alpha emitters

    International Nuclear Information System (INIS)

    McDowell, W.J.; Case, G.N.

    1988-01-01

    The combination of certain solvent extraction separations and a special kind of liquid scintillation detector and electronics designed for alpha spectrometry allows some highly accurate, yet simple determinations of alpha-emitting nuclides. Counting efficiency is 99.68% with backgrounds of 99.95%. The Photon/Electron Rejecting Alpha Liquid Scintillation (PERALS) equipment is described and procedures for the separation and determination of uranium, thorium, plutonium, polonium, radium, and trivalent actinides are outlined. 25 refs., 10 figs., 1 tab

  4. Electronic structure investigation of MoS2 and MoSe2 using angle-resolved photoemission spectroscopy and ab initio band structure studies.

    Science.gov (United States)

    Mahatha, S K; Patel, K D; Menon, Krishnakumar S R

    2012-11-28

    Angle-resolved photoemission spectroscopy (ARPES) and ab initio band structure calculations have been used to study the detailed valence band structure of molybdenite, MoS(2) and MoSe(2). The experimental band structure obtained from ARPES has been found to be in good agreement with the theoretical calculations performed using the linear augmented plane wave (LAPW) method. In going from MoS(2) to MoSe(2), the dispersion of the valence bands decreases along both k(parallel) and k(perpendicular), revealing the increased two-dimensional character which is attributed to the increasing interlayer distance or c/a ratio in these compounds. The width of the valence band and the band gap are also found to decrease, whereas the valence band maxima shift towards the higher binding energy from MoS(2) to MoSe(2).

  5. Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

    Science.gov (United States)

    Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

    2018-03-01

    The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

  6. Spatial coherence of electron beams from field emitters and its effect on the resolution of imaged objects

    Energy Technology Data Exchange (ETDEWEB)

    Latychevskaia, Tatiana, E-mail: tatiana@physik.uzh.ch

    2017-04-15

    Sub-nanometer and nanometer-sized tips provide high coherence electron sources. Conventionally, the effective source size is estimated from the extent of the experimental biprism interference pattern created on the detector by applying the van Cittert Zernike theorem. Previously reported experimental intensity distributions on the detector exhibit Gaussian distribution and our simulations show that this is an indication that such electron sources must be at least partially coherent. This, in turn means that strictly speaking the Van Cittert Zernike theorem cannot be applied, since it assumes an incoherent source. The approach of applying the van Cittert Zernike theorem is examined in more detail by performing simulations of interference patterns for the electron sources of different size and different coherence length, evaluating the effective source size from the extent of the simulated interference pattern and comparing the obtained result with the pre-defined value. The intensity distribution of the source is assumed to be Gaussian distributed, as it is observed in experiments. The visibility or the contrast in the simulated holograms is found to be always less than 1 which agrees well with previously reported experimental results and thus can be explained solely by the Gaussian intensity distribution of the source. The effective source size estimated from the extent of the interference pattern turns out to be of about 2–3 times larger than the pre-defined size, but it is approximately equal to the intrinsic resolution of the imaging system. A simple formula for estimating the intrinsic resolution, which could be useful when employing nano-tips in in-line Gabor holography or point-projection microscopy, is provided. - Highlights: • van Cittert Zernike theorem for nano- and sub-nano electron emitting tips is revised. • Simulations show that nano- and sub-nano electron emitting tips are at least partially coherent. • A simple formula for evaluating

  7. Development of high-current-density LAB6 thermionic emitters for a space-charge-limited electron gun

    International Nuclear Information System (INIS)

    Herniter, M.E.; Getty, W.D.

    1987-01-01

    An electron gun has been developed for investigation of high current density, space charge limited operation of a lenthanum hexaboride (LaB 6 ) thermionic cathode. The 2.8 cm 2 cathode disk is heated by electron bombardment from a tungsten filament. For LaB 6 cathode temperatures greater than 1600 0 C it has been found that evaporation from the LaB 6 causes an increase in the tungsten filament emission, leading to an instability in the bombardment heating system. This instability has been investigated and eliminated by using a graphite disk in place of the LaB 6 cathode or by shielding the filament from the LaB 6 cathode by placing the LaB 6 in a graphite cup and bombarding the cup. The graphite disk has been heated to 1755 0 C with 755 W of heating power, and the shielded LaB 6 cathode has been heated to 1695 0 C. This temperature range is required for emission current densities in the 30 Acm 2 range. It is believed that the evaporation of lanthanum lowers the tungsten work function. In electron-gun use, the LaB 6 cathode has been operated up to 6.7 Acm 2 at 36 kV. A 120 kV Marx generator has been built to allow operation up to 40 Acm 2

  8. Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

    Science.gov (United States)

    Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

    2017-12-01

    Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

  9. Low emittance configuration for spear

    International Nuclear Information System (INIS)

    Blumberg, L.N.; Harris, J.; Stege, R.; Cerino, J.; Hettel, R.; Hofmann, A.; Liu, R.Z.; Wiedemann, H.; Winick, H.

    1985-01-01

    The quality of synchrotron radiation beams from SPEAR, in particular the brilliance of undulator radiation, can be improved significantly by reducing the emittance of the stored electron beam. A reduction of the horizontal emittance by a factor of 3.5 to a value of 130 nanometer-radians (nm-r) at 3 GeV has been achieved by using stronger focussing, mainly in the horizontal plane. The low emittance configuration also reduces the dispersion and vertical beta functions in the straight sections, making them more suitable for wigglers. The higher betatron tunes lead to a larger phase advance between the two kickers, which has to be corrected during injection by shunting current from some quadrupoles. The configuration was optimized within SPEAR hardware limitations and tested for dynamic aperture with the tracking program PATRICIA. After implementation of this scheme, beam was successfully injected and accumulated. The measured emittance of the stored beam was in agreement with calculations. Presently the configuration is being made operational

  10. Beam emittance measurement from CERN thermionic guns

    International Nuclear Information System (INIS)

    Kester, O.; Rao, R.; Rinolfi, L.

    1992-01-01

    In the LEP Injector Linacs (LIL) a thermionic gun provides electron beams with different peak intensities at an energy of 80 keV. The beam emittances were estimated from the EGUN programme. Since the gun is of triode type, the main contribution to the emittance comes from the grid. The simulation programme does not model the real geometry by assuming a cylindrical symmetry, while the grid does not have such symmetry. A Gun Test Facility (GTF), allowing emittance measurements, based on the 3-gradients-method was installed. The experimental results are presented. (author) 6 refs.; 6 figs

  11. Quantum efficiency and thermal emittance of metal photocathodes

    Directory of Open Access Journals (Sweden)

    David H. Dowell

    2009-07-01

    Full Text Available Modern electron beams have demonstrated the brilliance needed to drive free electron lasers at x-ray wavelengths with major advances occurring since the invention of the photocathode gun and the realization of emittance compensation. These state-of-the-art electron beams are now becoming limited by the intrinsic thermal emittance of the cathode. In both dc and rf photocathode guns details of the cathode emission physics strongly influence the quantum efficiency and the thermal emittance. Therefore improving cathode performance is essential to increasing the brightness of beams. It is especially important to understand the fundamentals of cathode quantum efficiency and thermal emittance. This paper investigates the relationship between the quantum efficiency and the thermal emittance for metal cathodes using the Fermi-Dirac model for the electron distribution. We use a consistent theory to derive the quantum efficiency and thermal emittance, and compare our results to those of others.

  12. The Quantum Efficiency and Thermal Emittance of Metal Photocathodes

    International Nuclear Information System (INIS)

    Dowell, D.

    2009-01-01

    Modern electron beams have demonstrated the brilliance needed to drive free electron lasers at x-ray wavelengths, with the principle improvements occurring since the invention of the photocathode gun. The state-of-the-art normalized emittance electron beams are now becoming limited by the thermal emittance of the cathode. In both DC and RF photocathode guns, details of the cathode emission physics strongly influence the quantum efficiency and the thermal emittance. Therefore improving cathode performance is essential to increasing the brightness of beams. It is especially important to understand the fundamentals of cathode quantum efficiency and thermal emittance. This paper investigates the relationship between the quantum efficiency and the thermal emittance of metal cathodes using the Fermi-Dirac model for the electron distribution. We derive the thermal emittance and its relationship to the quantum efficiency, and compare our results to those of others

  13. Enhancement of electron emission and long-term stability of tip-type carbon nanotube field emitters via lithium coating

    International Nuclear Information System (INIS)

    Kim, Jong-Pil; Chang, Han-Beet; Kim, Bu-Jong; Park, Jin-Seok

    2013-01-01

    Carbon nanotubes (CNTs) were deposited on conical tip-type substrates via electrophoresis and coated with lithium (Li) thin films with diverse thicknesses via electroplating. For the as-deposited (i.e., without Li coating) CNT, the turn-on (or triggering) electric field was 0.92 V/μm, and the emission current, which was generated at an applied field of 1.2 V/μm was 56 μA. In the case of the 4.7 nm-thick Li-coated CNT, the turn-on field decreased to 0.65 V/μm and the emission current at the same applied field increased more than ten times to 618 μA. The analysis based on the Kelvin probe measurement and Fowler–Nordheim theory indicated that the coating of Li caused a loss in the structural-aspect-ratio of the CNTs and it reduced their effective work functions from 5.36 eV to 4.90 eV, which led to a great improvement of their electron emission characteristics. The results obtained in this study also showed that the long-term emission stability could be enhanced by the coating of thin Li films on CNTs. - Highlights: ► CNTs are deposited via electrophoretic deposition (EPD). ► Thin films of Li are coated on CNTs via electroplating, without plasma damage. ► Li coating enhanced field emission properties and emission stability of CNTs. ► The effective work functions and field enhancement factors of CNTs are evaluated

  14. Intercalation of Si between MoS2 layers

    Directory of Open Access Journals (Sweden)

    Rik van Bremen

    2017-09-01

    Full Text Available We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si on molybdenum disulfide (MoS2. At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1 Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2 The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3 I(V scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4 Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5 X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS2 surface, but rather intercalate between the MoS2 layers. Our conclusion that Si intercalates upon the deposition on MoS2 is at variance with the interpretation by Chiappe et al. (Adv. Mater. 2014, 26, 2096–2101 that silicon forms a highly strained epitaxial layer on MoS2. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS2 are stable.

  15. Auger electron emitter against multiple myeloma - targeted endo-radio-therapy with 125I-labeled thymidine analogue 5-iodo-4'-thio-2'-deoxyuridine

    International Nuclear Information System (INIS)

    Morgenroth, Agnieszka; Dinger, Cornelia; Zlatopolskiy, Boris D.; Al-Momani, Ehab; Glatting, Gerhard; Mottaghy, Felix M.; Reske, Sven N.

    2011-01-01

    Introduction: Multiple myeloma (MM) is a plasma cell malignancy characterized by accumulation of malignant, terminally differentiated B cells in the bone marrow. Despite advances in therapy, MM remains an incurable disease. Novel therapeutic approaches are, therefore, urgently needed. Auger electron-emitting radiopharmaceuticals are attractive for targeted nano-irradiation therapy, given that DNA of malignant cells is selectively addressed. Here we evaluated the antimyeloma potential of the Auger electron-emitting thymidine analogue 125 I-labeled 5-iodo-4'-thio-2'-deoxyuridine ([ 125 I]ITdU). Methods: Cellular uptake and DNA incorporation of [ 125 I]ITdU were determined in fluorodeoxyuridine-pretreated KMS12BM, U266, dexamethasone-sensitive MM1.S and -resistant MM1.R cell lines. The effect of stimulation with interleukin 6 (IL6) or insulin-like growth factor 1 (IGF1) on the intracellular incorporation of [ 125 I]ITdU was investigated in cytokine-sensitive MM1.S and MM1.R cell lines. Apoptotic cells were identified using Annexin V. Cleavage of caspase 3 and PARP was visualized by Western blot. DNA fragmentation was investigated using laddering assay. Therapeutic efficiency of [ 125 I]ITdU was proven by clonogenic assay. Results: [ 125 I]ITdU was shown to be efficiently incorporated into DNA of malignant cells, providing a promising mechanism for delivering highly toxic Auger radiation emitters into tumor DNA. [ 125 I]ITdU had a potent antimyeloma effect in cell lines representing distinct disease stages and, importantly, in cell lines sensitive or resistant to the conventional therapeutic agent, but was not toxic for normal plasma and bone marrow stromal cells. Furthermore, [ 125 I]ITdU abrogated the protective actions of IL6 and IGF1 on MM cells. [ 125 I]ITdU induced massive damage in the DNA of malignant plasma cells, which resulted in efficient inhibition of clonogenic growth. Conclusion: These studies may provide a novel treatment strategy for overcoming

  16. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  17. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

    2012-01-01

    Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  18. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  19. Synthesis of Epitaxial Single-Layer MoS2 on Au(111).

    Science.gov (United States)

    Grønborg, Signe S; Ulstrup, Søren; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E; Lauritsen, Jeppe V; Hofmann, Philip; Miwa, Jill A

    2015-09-08

    We present a method for synthesizing large area epitaxial single-layer MoS2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2 islands to a continuous MoS2 layer. An exceptionally good control over the MoS2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2 nanoislands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within the MoS2 islands, we identify domains rotated by 60° that lead to atomically sharp line defects at domain boundaries. As the MoS2 coverage approaches the limit of a complete single layer, the formation of bilayer MoS2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2 layer from vacuum is not found to affect its quality.

  20. Fast and slow border traps in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.

    1996-01-01

    Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced l/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between ∼10 -6 s and ∼1 s) and slower (switching times greater than ∼1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E' defects (trivalent Si centers in SiO 2 associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps

  1. Monolayer MoS2 heterojunction solar cells

    KAUST Repository

    Tsai, Menglin

    2014-08-26

    We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

  2. A low-emittance lattice for SPEAR

    International Nuclear Information System (INIS)

    Safranek, J.; Wiedemann, H.

    1992-01-01

    The design and implementation of a low emittance lattice for the SPEAR storage ring including measurements of the performance of the lattice are presented (J. Safranek, Ph. D. thesis, Stanford University, 1991). The low emittance lattice is designed to optimize the performance of SPEAR as a synchrotron radiation source while keeping SPEAR hardware changes at a minimum. The horizontal emittance of the electron beam in the low emittance lattice is reduced by a factor of 4 from the previous lattice. This reduces the typical horizontal source size and divergence of the photon beams by a factor of 2 each and increases the photon beam brightness. At 3 GeV the horizontal emittance is 129 π nm rad, which makes the low emittance lattice the lowest emittance, runnning synchroton radiation source in the world in the 1.5 to 4.0 GeV energy range for the emittance scaled to 3 GeV. The measured vertical emittance was reduced to half that typically seen at SPEAR in the past. The brightness of the photon beams was further incrased by reducing β y at the insertion devices to 1.1 m and reducing the energy dispersion at the insertion devices by more than a factor of 2 on average. The horizontal despersion at the rf cavities was reduced by a factor of nearly 4 which gives much less problems with synchrobetatron resonances. The dynamic and physical apertures of the lattice are large, giving long beam lifetimes and easy injection of electrons. The measurements of the linear optics and intensity dependent phenomena gave resonable agreement with the design . The overall performance of the machine was very good. Injection rates of 10 to 20 mA/min and larger were achieved routinely, and 100 mA total current was stored. Repeated ramping of stored beam from the injection energy of 2.3 GeV to the running energy of 3.0 GeV was achieved with very little beam loss. This low emittance configuration is expected to be the operating configuration for SPEAR starting in January 1992. (orig.)

  3. Coupling of Quantum Emitters in Nanodiamonds to Plasmonic Structures

    DEFF Research Database (Denmark)

    Kumar, Shailesh

    This PhD thesis describes work towards the enhancement and efficient channeling of photons emitted from a single photon emitter. The emitter used is a defect center, the Nitrogen-Vacancy (NV) center, in diamond. The NV-center has many unique properties, such as long coherence time of its electron...

  4. High conductivity graphene-like MoS2/polyaniline nanocomposites and its application in supercapacitor

    International Nuclear Information System (INIS)

    Wang, Jin; Wu, Zongchao; Hu, Kunhong; Chen, Xiangying; Yin, Huabing

    2015-01-01

    Highlights: • A facile synthesis method of MoS 2 /PANI intercalated nanocomposites is developed. • There is synergistic effect between PANI and MoS 2 layer in the MoS 2 /PANI composites. • Intercalation is benefit for electrons transportation and conductivity increase. • The well-defined MoS 2 /PANI have good specific capacitances and long cyclic life. - Abstract: High conductivity nanocomposites of molybdenum disulfide (MoS 2 )/polyaniline (PANI) were prepared via direct intercalation of aniline monomer and doped with dodecyl benzene sulfonic acid (DBSA). The intercalated interaction between PANI and MoS 2 improves the conductivity and thermal stability of MoS 2 /PANI nanocomposites with the increasing fraction of MoS 2 . The conductivity and maximum weight loss velocity temperature of PANI/MoS 2 -38 sample are 2.38 S cm −1 and 353 °C, respectively. This architecture is also advantageous for enhancing the capacitance properties and cyclic stabilities of MoS 2 /PANI electrodes. In comparison to the specific capacitance of 131 F/g and 42% retained capacitance over 600 cycles of PANI electrode, the MoS 2 /PANI-38 electrode provides a specific capacitance up to 390 F/g and 86% retained capacitance over 1000 cycles. Thus it provides an improved capacitance method which synergistically combines pseudocapacitance and double-layer capacitance for supercapacitor electrodes

  5. Oxidation of atomically thin MoS2 on SiO2

    Science.gov (United States)

    Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

    2013-03-01

    Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

  6. Cancer from internal emitters

    International Nuclear Information System (INIS)

    Boecker, B.B.; Griffith, W.C. Jr.

    1995-01-01

    Irradiation from internal emitters, or internally deposited radionuclides, is an important component of radiation exposures encountered in the workplace, home, or general environment. Long-term studies of human populations exposed to various internal emitters by different routes of exposure are producing critical information for the protection of workers and members of the general public. The purpose of this report is to examine recent developments and discuss their potential importance for understanding lifetime cancer risks from internal emitters. The major populations of persons being studied for lifetime health effects from internally deposited radionuclides are well known: Lung cancer in underground miners who inhaled Rn progeny, liver cancer from persons injected with the Th-containing radiographic contrast medium Thorotrast, bone cancer from occupational or medical intakes of 226 Ra or medical injections of 224 Ra, and thyroid cancer from exposures to iodine radionuclides in the environment or for medical purposes

  7. Transverse emittance measurement at REGAE via a solenoid scan

    Energy Technology Data Exchange (ETDEWEB)

    Hachmann, Max; Mayet, Frank; Gruener, Florian [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Floettmann, Klaus [DESY, Hamburg (Germany)

    2013-07-01

    The linear accelerator REGAE at DESY produces short and low charged electron bunches, on the one hand to resolve the excitation transitions of atoms temporally by pump probe electron diffraction experiments and on the other hand to investigate principal mechanisms of laser plasma acceleration. For both cases a high quality electron beam is required which can be identified with a small beam emittance. The current method to measure the transverse beam emittance at REGAE and results are presented.

  8. Simple-to-prepare multipoint field emitter

    Science.gov (United States)

    Sominskii, G. G.; Taradaev, E. P.; Tumareva, T. A.; Mishin, M. V.; Kornishin, S. Yu.

    2015-07-01

    We investigate multitip field emitters prepared by electroerosion treatment of the surface of molybdenum samples. Their characteristics are determined for operation with a protecting activated fullerene coating. Our experiments indicate that such cathodes are promising for high-voltage electron devices operating in technical vacuum.

  9. Emittance measuring system on the UNILAC

    International Nuclear Information System (INIS)

    Ehrich, A.; Glatz, J.; Strahl, P.

    A description is given of one of the beam emittance measuring systems designed for the UNILAC at GSI. The measuring system mechanics and the detector system are detailed, and the associated electronics are discussed. Computer programming and data processing and evaluation are described

  10. Calculating emittance for Gaussian and Non-Gaussian distributions by the method of correlations for slits

    International Nuclear Information System (INIS)

    Tan, Cheng-Yang; Fermilab

    2006-01-01

    One common way for measuring the emittance of an electron beam is with the slits method. The usual approach for analyzing the data is to calculate an emittance that is a subset of the parent emittance. This paper shows an alternative way by using the method of correlations which ties the parameters derived from the beamlets to the actual parameters of the parent emittance. For parent distributions that are Gaussian, this method yields exact results. For non-Gaussian beam distributions, this method yields an effective emittance that can serve as a yardstick for emittance comparisons

  11. Interfacial chemical reactions between MoS2 lubricants and bearing materials

    Science.gov (United States)

    Zabinski, J. S.; Tatarchuk, B. J.

    1989-01-01

    XPS and conversion-electron Moessbauer spectroscopy (CEMS) were used to examine iron that was deposited on the basal plane of MoS2 single crystals and subjected to vacuum annealing, oxidizing, and reducing environments. Iron either intercalated into the MoS2 structure or formed oriented iron sulfides, depending on the level of excess S in the MoS2 structure. CEMS data demonstrated that iron sulfide crystal structures preferentially aligned with respect to the MoS2 basal plane, and that alignment (and potentially adhesion) could be varied by appropriate high-temperature annealing procedures.

  12. BEAM EMITTANCE MEASUREMENT TOOL FOR CEBAF OPERATIONS

    International Nuclear Information System (INIS)

    Chevtsov, Pavel; Tiefenback, Michael

    2008-01-01

    A new software tool was created at Jefferson Lab to measure the emittance of the CEBAF electron beams. The tool consists of device control and data analysis applications. The device control application handles the work of wire scanners and writes their measurement results as well as the information about accelerator settings during these measurements into wire scanner data files. The data analysis application reads these files and calculates the beam emittance on the basis of a wire scanner data processing model. Both applications are computer platform independent but are mostly used on LINUX PCs recently installed in the accelerator control room. The new tool significantly simplifies beam emittance measurement procedures for accelerator operations and contributes to a very high availability of the CEBAF machine for the nuclear physics program at Jefferson Lab.

  13. Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors.

    Science.gov (United States)

    Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil

    2018-01-31

    The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

  14. On the design guideline for the low emittance synchrotron radiation source

    International Nuclear Information System (INIS)

    Kamiya, Y.; Kihara, M.

    1983-09-01

    In this note we will describe how the emittance of the electron storage ring is determined by the orbit parameters of the storage ring and show the lowest value of emittance which is achieved theoretically. Implication of this note with regard to the design of the low emittance storage ring will be discussed. (author)

  15. The Interface between Gd and Monolayer MoS2: A First-Principles Study

    KAUST Repository

    Zhang, Xuejing; Mi, Wenbo; Wang, Xiaocha; Cheng, Yingchun; Schwingenschlö gl, Udo

    2014-01-01

    We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS2 upwards into the conduction band. At the surface

  16. Adsorption studies of alcohol molecules on monolayer MoS_2 nanosheet—A first-principles insights

    International Nuclear Information System (INIS)

    Nagarajan, V.; Chandiramouli, R.

    2017-01-01

    Highlights: • The adsorption of methanol, ethanol & 1-propanol on MoS_2 nanosheet are studied. • The PDOS & band structure confirms adsorption of alcohol vapors on MoS_2 nanosheet. • The adsorption of 1-propanol vapor on MoS_2 nanosheet is more favorable. • The alcohol molecules adsorption on MoS_2 nanosheet is explored in atomistic level. - Abstract: The electronic and adsorption properties of three different alcohol molecules namely methanol, ethanol and 1-propanol vapors on MoS_2 nanosheet is investigated using DFT method. The structural stability of MoS_2 nanosheet is ascertained with formation energy. The adsorption properties of alcohol molecules on MoS_2 base material is discussed in terms of average energy gap variation, Mulliken charge transfer, energy band gap and adsorption energy. The prominent adsorption sites of methanol, ethanol and 1-propanol vapors on MoS_2 nanosheet are studied in atomistic level. The projected density of states (PDOS) spectrum gives the clear insights on the electronic properties of MoS_2 nanosheet. The PDOS and energy band structure confirmed the adsorption of alcohol vapors on MoS_2 nanosheet. The variation in the band structure and PDOS is noticed upon adsorption of methanol, ethanol and 1-propanol molecules on MoS_2 nanosheet. The PDOS spectrum also reveals the variation in peak maxima owing to transfer of electron between alcohol molecules and MoS_2 base material. The adsorption of 1-propanol vapor on MoS_2 nanosheet is observed to be more favorable than other alcohol molecules. The findings confirm that monolayer MoS_2 nanosheet can be used to detect the presence of alcohol vapors in the environment.

  17. CSR-induced emittance growth in achromats: Linear formalism revisited

    Energy Technology Data Exchange (ETDEWEB)

    Venturini, M.

    2015-09-11

    We review the R-matrix formalism used to describe Coherent Synchrotron Radiation (CSR)-induced projected emittance growth in electron beam transport lines and establish the connection with a description in terms of the dispersion-invariant function.

  18. Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

    DEFF Research Database (Denmark)

    Yang, Xiaonian; Li, Qiang; Hu, Guofeng

    2016-01-01

    . Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled...... synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 mu m were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized...... monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm(2...

  19. Nonlocal plasmonic response of doped and optically pumped graphene, MoS2, and black phosphorus

    Science.gov (United States)

    Petersen, René; Pedersen, Thomas Garm; Javier García de Abajo, F.

    2017-11-01

    Plasmons in two-dimensional (2D) materials have emerged as a new source of physical phenomena and optoelectronic applications due in part to the relatively small number of charge carriers on which they are supported. Unlike conventional plasmonic materials, they possess a large Fermi wavelength, which can be comparable with the plasmon wavelength, thus leading to unusually strong nonlocal effects. Here, we study the optical response of a selection of 2D crystal layers (graphene, MoS2, and black phosphorus) with inclusion of nonlocal and thermal effects. We extensively analyze their plasmon dispersion relations and focus on the Purcell factor for the decay of an optical emitter in close proximity to the material as a way to probe nonlocal and thermal effects, with emphasis placed on the interplay between temperature and doping. The results are based on tight-binding modeling of the electronic structure combined with the random-phase approximation response function in which the temperature enters through the Fermi-Dirac electronic occupation distribution. Our study provides a route map for the exploration and exploitation of the ultrafast optical response of 2D materials.

  20. Forces and electronic transport in a contact formed by a graphene tip and a defective MoS2 monolayer: a theoretical study

    Science.gov (United States)

    di Felice, D.; Dappe, Y. J.; González, C.

    2018-06-01

    A theoretical study of a graphene-like tip used in atomic force microscopy (AFM) is presented. Based on first principles simulations, we proved the low reactivity of this kind of tip, using a MoS2 monolayer as the testing sample. Our simulations show that the tip–MoS2 interaction is mediated through weak van der Waals forces. Even on the defective monolayer, the interaction is reduced by one order of magnitude with respect to the values obtained using a highly reactive metallic tip. On the pristine monolayer, the S atoms were imaged for large distances together with the substitutional defects which should be observed as brighter spots in non-contact AFM measurements. This result is in contradiction with previous simulations performed with Cu or Si tips where the metallic defects were imaged for much larger distances than the S atoms. For shorter distances, the Mo sites will be brighter even though a vacancy is formed. On the other hand, the largest conductance value is obtained over the defect formed by two Mo atoms occupying a S divacancy when the half-occupied p y -states of the graphene-like tip find a better coupling with d-orbitals of the highest substitutional atom. Due to the weak interaction, no conductance plateau is formed in any of the sites. A great advantage of this tip lies in the absence of atomic transfer between the tip and the sample leading to a more stable AFM measurement. Finally, and as previously shown, we confirm the atomic resolution in a scanning tunneling microscopy simulation using this graphene-based tip.

  1. Verification of Fowler–Nordheim electron tunneling mechanism in Ni/SiO{sub 2}/n-4H SiC and n{sup +} poly-Si/SiO{sub 2}/n-4H SiC MOS devices by different models

    Energy Technology Data Exchange (ETDEWEB)

    Kodigala, Subba Ramaiah, E-mail: kodigala@gmail.com [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Department of Physics and Astronomy, Department of Electrical and Computer Engineering, California State University, Northridge, CA 91330 (United States)

    2016-11-01

    This article emphasizes verification of Fowler–Nordheim electron tunneling mechanism in the Ni/SiO{sub 2}/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current–field (J–F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J–F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.

  2. Low-emittance Storage Rings

    CERN Document Server

    Wolski, Andrzej

    2014-01-01

    The effects of synchrotron radiation on particle motion in storage rings are discussed. In the absence of radiation, particle motion is symplectic, and the beam emittances are conserved. The inclusion of radiation effects in a classical approximation leads to emittance damping: expressions for the damping times are derived. Then, it is shown that quantum radiation effects lead to excitation of the beam emittances. General expressions for the equilibrium longitudinal and horizontal (natural) emittances are derived. The impact of lattice design on the natural emittance is discussed, with particular attention to the special cases of FODO-, achromat- and theoretical-minimum-emittance-style lattices. Finally, the effects of betatron coupling and vertical dispersion (generated by magnet alignment and lattice tuning errors) on the vertical emittance are considered.

  3. Rare Earth Garnet Selective Emitter

    Science.gov (United States)

    Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

    1994-01-01

    Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional

  4. Spherical proton emitters

    International Nuclear Information System (INIS)

    Berg, S.; Semmes, P.B.; Nazarewicz, W.

    1997-01-01

    Various theoretical approaches to proton emission from spherical nuclei are investigated, and it is found that all the methods employed give very similar results. The calculated decay widths are found to be qualitatively insensitive to the parameters of the proton-nucleus potential, i.e., changing the potential parameters over a fairly large range typically changes the decay width by no more than a factor of ∼3. Proton half-lives of observed heavy proton emitters are, in general, well reproduced by spherical calculations with the spectroscopic factors calculated in the independent quasiparticle approximation. The quantitative agreement with experimental data obtained in our study requires that the parameters of the proton-nucleus potential be chosen carefully. It also suggests that deformed proton emitters will provide invaluable spectroscopic information on the angular momentum decomposition of single-proton orbitals in deformed nuclei. copyright 1997 The American Physical Society

  5. Dosimetry of internal emitters

    International Nuclear Information System (INIS)

    Anon.

    1982-01-01

    The Dosimetry of Internal Emitter Program endeavors to refine the correlation between radiation dose and observed biological effects. The program is presently engaged in the development of studies that will demonstrate the applicability of microdosimetry models developed under the Microdosimetry of Internal Sources Program. The program also provides guidance and assistance to Pacific Northwest Laboratory's Biology Department in the dosimetric analysis of internally deposited radionuclides. This report deals with alpha particle dosimetry plutonium 239 inhalation, and in vitro studies of chromosomal observations

  6. Nonintercepting emittance monitor

    International Nuclear Information System (INIS)

    Miller, R.H.; Clendenin, J.E.; James, M.B.; Sheppard, J.C.

    1983-08-01

    A nonintercepting emittance monitor is a helpful device for measuring and improving particle beams in accelerators and storage rings as it allows continuous monitoring of the beam's distribution in phase space, and perhaps closed loop computer control of the distributions. Stripline position monitors are being investigated for use as nonintercepting emittance monitors for a beam focused by a FODO array in the first 100 meters of our linear accelerator. The technique described here uses the signal from the four stripline probes of a single position monitor to measure the quadrupole mode of the wall current in the beam pipe. This current is a function of the quadrupole moment of the beam, sigma 2 /sub x/ - sigma 2 /sub y/. In general, six independent measurements of the quadrupole moment are necessary to determine the beam emittance. This technique is dependent on the characteristically large variations of sigma 2 /sub x/ - sigma 2 /sub y/ in a FODO array. It will not work in a focusing system where the beam is round at each focusing element

  7. Emittance compensation of CW DC-gun photoinjector

    International Nuclear Information System (INIS)

    Li Peng; Wu Dai; Xu Zhou; Li Ming; Yang Xingfan

    2011-01-01

    Emittance growth induced by space charge effect is very important, especially for CW DC-gun photoinjector. In this work, the linear space charge force and its effect on electron beam transverse emittance are studied, and the principle and properties of emittance compensation by solenoid are analyzed. The CAEP DC-gun photoinjector with a solenoid is also simulated by code Parmela. Simulated results indicate that the normalized transverse emittance of an 80 pC bunch at the 350 keV DC-gun ex-it is 5.14 mm · mrad. And after compensated by a solenoid, it becomes 1.27 mm · mrad. The emittance of beam is well compensated. (authors)

  8. MoS2-modified ZnO quantum dots nanocomposite: Synthesis and ultrafast humidity response

    International Nuclear Information System (INIS)

    Ze, Lu; Yueqiu, Gong; Xujun, Li; Yong, Zhang

    2017-01-01

    Highlights: • MoS 2 @ZnO QDs composite structure was synthesized by two-steps methods. • Ultrafast humidity sensing response is achieved by MoS 2 @ZnO QDs humidity sensor. • Sensor performs excellent cycle stability from 11% to 95% RH. • Humidity sensor could detect wide humidity range (11–95%). - Abstract: In this work, ZnO quantum dots (QDs), layered MoS 2 and MoS 2 -modified ZnO QDs (MoS 2 @ZnO QDs) nanocomposite were synthesized and then applied as humidity sensor. The crystal structure, morphology and element distribution of ZnO QDs, MoS 2 and MoS 2 @ZnO QDs were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectrometry, respectively. The humidity sensing characteristics of the MoS 2 and MoS 2 @ZnO QDs against various relative humidity were measured at room temperature. The results show that the MoS 2 @ZnO QDs sensor exhibits high sensitivity with an impedance variation of three or four orders of magnitude to relative humidity range of 11–95% and it exhibits a short response-recovery time (1 s for adsorption and 20 s for desorption) and excellent repeatability. The mechanisms of the excellent performance for humidity sensing of MoS 2 @ZnO QDs sensor were discussed based on its impedance properties. Our work could offer guidelines to design higher performance especially ultrafast humidity response sensor utilizing the nanocomposite structure with two dimensional material and QDs.

  9. Transverse emittance measurement at REGAE via a solenoid scan

    Energy Technology Data Exchange (ETDEWEB)

    Hachmann, Max

    2012-12-15

    The linear accelerator REGAE at DESY produces short and low charged electron bunches, on the one hand to resolve the excitation transitions of atoms temporally by pump probe electron diffraction experiments and on the other hand to investigate principal mechanisms of laser plasma acceleration. For both cases a high quality electron beam is required. A quantity to rate the beam quality is the beam emittance. In the course of this thesis transverse emittance measurements by a solenoid scan could be realized and beyond that an improved theoretical description of a solenoid was successful. The foundation of emittance measurements are constituted by theoretical models which describe the envelope of a beam. Two different models were derived. The first is an often used model to determine the transverse beam emittance without considering space charge effects. More interesting and challenging was the development of an envelope model taking space charge effects into account. It is introduced and cross checked with measurements and simulations.

  10. The synthesis of hierarchical nanostructured MoS_2/Graphene composites with enhanced visible-light photo-degradation property

    International Nuclear Information System (INIS)

    Zhao, Yongjie; Zhang, Xiaowei; Wang, Chengzhi; Zhao, Yuzhen; Zhou, Heping; Li, Jingbo; Jin, HaiBo

    2017-01-01

    Graphical abstract: Introducing graphene layer into MoS_2 could construct the steady hierarchical structure which could efficiently separate the photo-induced electrons so as to enhance the photo- degradation behavior. - Highlights: • The MoS_2 and MoS_2/Graphene nanocomposite have been synthesized via a solvothermal process. • The scrolled nanosheets of MoS_2 combining with interconnected graphene network promoted the formation of steady hierarchical architecture. • Comparing with MoS_2, the hierarchical MoS_2/Graphene nanocomposite achieved relatively higher degradation rate. • The synergistic effect mechanism for excellent photo-degradation activity was proposed. - Abstract: Novel two-dimensional materials with a layered structure are of special interest for a variety of promising applications. Herein, MoS_2 and MoS_2/Graphene nanocomposite with hierarchical nanostructure were successfully synthesized employing a one-step hydrothermal method. Photo-degradation of methylene blue (MB) and rhodamine (RHB) were adopted to assess the photo-degradation ability of the products. Comparing with bare MoS_2, the hierarchical MoS_2/Graphene nanocomposite achieved relatively higher degradation rate of 99% in 28 min for MB as well in 50 min for RHB. These results verified that this proposed hierarchical nanocomposite is a good photo-degradation semiconductor. The excellent performance was mainly ascribed to the synergistic effect of MoS_2 and graphene layers. The MoS_2 possessing a band gap of 1.9 eV would provide abundant electron-hole pairs. The graphene layers with excellent electro-conductivity could realize the quick transport of electrons via its extended π-conjugation structure, consequently benefiting the separation of photo-generated carriers. These findings indicate that the graphene layer is a promising candidate as a co-catalyst for MoS_2 photo-catalyst, and also provide useful information for understanding the observed enhanced photocatalytic mechanism

  11. Balancing the Hydrogen Evolution Reaction, Surface Energetics, and Stability of Metallic MoS2 Nanosheets via Covalent Functionalization.

    Science.gov (United States)

    Benson, Eric E; Zhang, Hanyu; Schuman, Samuel A; Nanayakkara, Sanjini U; Bronstein, Noah D; Ferrere, Suzanne; Blackburn, Jeffrey L; Miller, Elisa M

    2018-01-10

    We modify the fundamental electronic properties of metallic (1T phase) nanosheets of molybdenum disulfide (MoS 2 ) through covalent chemical functionalization, and thereby directly influence the kinetics of the hydrogen evolution reaction (HER), surface energetics, and stability. Chemically exfoliated, metallic MoS 2 nanosheets are functionalized with organic phenyl rings containing electron donating or withdrawing groups. We find that MoS 2 functionalized with the most electron donating functional group (p-(CH 3 CH 2 ) 2 NPh-MoS 2 ) is the most efficient catalyst for HER in this series, with initial activity that is slightly worse compared to the pristine metallic phase of MoS 2 . The p-(CH 3 CH 2 ) 2 NPh-MoS 2 is more stable than unfunctionalized metallic MoS 2 and outperforms unfunctionalized metallic MoS 2 for continuous H 2 evolution within 10 min under the same conditions. With regards to the entire studied series, the overpotential and Tafel slope for catalytic HER are both directly correlated with the electron donating strength of the functional group. The results are consistent with a mechanism involving ground-state electron donation or withdrawal to/from the MoS 2 nanosheets, which modifies the electron transfer kinetics and catalytic activity of the MoS 2 nanosheet. The functional groups preserve the metallic nature of the MoS 2 nanosheets, inhibiting conversion to the thermodynamically stable semiconducting state (2H) when mildly annealed in a nitrogen atmosphere. We propose that the electron density and, therefore, reactivity of the MoS 2 nanosheets are controlled by the attached functional groups. Functionalizing nanosheets of MoS 2 and other transition metal dichalcogenides provides a synthetic chemical route for controlling the electronic properties and stability within the traditionally thermally unstable metallic state.

  12. Silicon Carbide Emitter Turn-Off Thyristor

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2008-01-01

    Full Text Available A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 A/cm2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 W/cm2 conduction and the 100 W/cm2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV and higher frequency (10 kHz are needed.

  13. Morphology-controlled synthesis of MoS2 nanostructures with different lithium storage properties

    International Nuclear Information System (INIS)

    Wang, Xiwen; Zhang, Zhian; Chen, Yaqiong; Qu, Yaohui; Lai, Yanqing; Li, Jie

    2014-01-01

    Highlights: • MoS 2 nanospheres, nanoribbons and nanoparticles were prepared by hydrothermal method. • The surfactant and temperature control the shape and crystal structure of MoS 2 . • MoS 2 nanospheres exhibit the excellent lithium storage property. - Abstract: A one-step hydrothermal process was employed to prepare a series of MoS 2 nanostructures via simply altering the surfactant as soft template and hydrothermal reaction temperature. Three kinds of MoS 2 nanostructures (three-dimensional (3D) hierarchical nanospheres, one-dimensional (1D) nanoribbons, and large aggregated nanoparticles) were successfully achieved and investigated well by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Brunauer–Emmett–Teller analysis (BET). Electrochemical tests reveal that these MoS 2 samples could deliver high initial discharge capacities (higher than 1050.0 mA h g −1 ), but various cycling performances. The hierarchical MoS 2 nanospheres assembled by sheet-like subunits show the highest specific capacity of 1355.1 mA h g −1 , and 66.8% of which can be retained after 50 cycles. The good lithium storage property of hierarchical MoS 2 nanospheres can be attributed to the higher electrolyte/MoS 2 contact area and stable 3D layered structure

  14. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  15. Conduction quantization in monolayer MoS2

    Science.gov (United States)

    Li, T. S.

    2016-10-01

    We study the ballistic conduction of a monolayer MoS2 subject to a spatially modulated magnetic field by using the Landauer-Buttiker formalism. The band structure depends sensitively on the field strength, and its change has profound influence on the electron conduction. The conductance is found to demonstrate multi-step behavior due to the discrete number of conduction channels. The sharp peak and rectangular structures of the conductance are stretched out as temperature increases, due to the thermal broadening of the derivative of the Fermi-Dirac distribution function. Finally, quantum behavior in the conductance of MoS2 can be observed at temperatures below 10 K.

  16. Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

    Science.gov (United States)

    Gaur, Anand P. S.; Sahoo, Satyaprakash; Mendoza, Frank; Rivera, Adriana M.; Kumar, Mohit; Dash, Saroj P.; Morell, Gerardo; Katiyar, Ram S.

    2016-01-01

    Nanostructured materials, such as carbon nanotubes, are excellent cold cathode emitters. Here, we report comparative field emission (FE) studies on topographically tailored few layer MoS2 films consisting of ⟨0001⟩ plane perpendicular (⊥) to c-axis (i.e., edge terminated vertically aligned) along with planar few layer and monolayer (1L) MoS2 films. FE measurements exhibited lower turn-on field Eto (defined as required applied electric field to emit current density of 10 μA/cm2) ˜4.5 V/μm and higher current density ˜1 mA/cm2, for edge terminated vertically aligned (ETVA) MoS2 films. However, Eto magnitude for planar few layer and 1L MoS2 films increased further to 5.7 and 11 V/μm, respectively, with one order decrease in emission current density. The observed differences in emission behavior, particularly for ETVA MoS2 is attributed to the high value of geometrical field enhancement factor (β), found to be ˜1064, resulting from the large confinement of localized electric field at edge exposed nanograins. Emission behavior of planar few layers and 1L MoS2 films are explained under a two step emission mechanism. Our studies suggest that with further tailoring the microstructure of ultra thin ETVA MoS2 films would result in elegant FE properties.

  17. Electrochemical maps and movies of the hydrogen evolution reaction on natural crystals of molybdenite (MoS2): basal vs. edge plane activity† †Electronic supplementary information (ESI) available: Movies S1 to S4: spatially resolved LSV-SECCM movies obtained from the electrocatalytic HER on the surface of bulk MoS2. Fig. S1 to S14: XRD, XPS, Raman, SEM and OM characterization of MoS2; SEM images of the nanopipets; WCA measurements; LSVs and Tafel plots obtained from the HER on MoS2. See DOI: 10.1039/c7sc02545a Click here for additional data file. Click here for additional data file. Click here for additional data file. Click here for additional data file. Click here for additional data file.

    Science.gov (United States)

    Kang, Minkyung; Maddar, Faduma M.; Li, Fengwang; Walker, Marc; Zhang, Jie

    2017-01-01

    Two dimensional (2D) semiconductor materials, such as molybdenum disulfide (MoS2) have attracted considerable interest in a range of chemical and electrochemical applications, for example, as an abundant and low-cost alternative electrocatalyst to platinum for the hydrogen evolution reaction (HER). While it has been proposed that the edge plane of MoS2 possesses high catalytic activity for the HER relative to the “catalytically inert” basal plane, this conclusion has been drawn mainly from macroscale electrochemical (voltammetric) measurements, which reflect the “average” electrocatalytic behavior of complex electrode ensembles. In this work, we report the first spatially-resolved measurements of HER activity on natural crystals of molybdenite, achieved using voltammetric scanning electrochemical cell microscopy (SECCM), whereby pixel-resolved linear-sweep voltammogram (LSV) measurements have allowed the HER to be visualized at multiple different potentials to construct electrochemical flux movies with nanoscale resolution. Key features of the SECCM technique are that characteristic surface sites can be targeted and analyzed in detail and, further, that the electrocatalyst area is known with good precision (in contrast to many macroscale measurements on supported catalysts). Through correlation of the local voltammetric response with information from scanning electron microscopy (SEM) and atomic force microscopy (AFM) in a multi-microscopy approach, it is demonstrated unequivocally that while the basal plane of bulk MoS2 (2H crystal phase) possesses significant activity, the HER is greatly facilitated at the edge plane (e.g., surface defects such as steps, edges or crevices). Semi-quantitative treatment of the voltammetric data reveals that the HER at the basal plane of MoS2 has a Tafel slope and exchange current density (J 0) of ∼120 mV per decade and 2.5 × 10–6 A cm–2 (comparable to polycrystalline Co, Ni, Cu and Au), respectively, while the edge

  18. A low emittance configuration for spear

    International Nuclear Information System (INIS)

    Blumberg, L.N.; Cerino, J.; Harris, J.; Hettel, R.; Hofmann, A.; Liu, R.Z.; Stego, R.; Wiedemann, H.; Winick, H.

    1985-01-01

    The quality of synchrotron radiation beams from SPEAR, in particular the brilliance of undulator radiation, can be improved significantly by reducing the emittance of the stored electron beam. A reduction of the horizontal emittance by a factor of 3.5 to a value of 130 nanometer-radians (nm-r) at 3 GeV has been achieved by using stronger focussing, mainly in the horizontal plane. The low emittance configuration also reduces the dispersion and vertical beta functions in the straight sections, making them more suitable for wigglers. The higher betatron tunes lead to a larger phase advance between the two kickers, which has to be corrected during injection by shunting current from some quadrupoles. The configuration was optimized within SPEAR hardware limitations and tested for dynamic aperture with the tracking program PATRICIA. After implementation of this scheme, beam was successfully injected and accumulated. The measured emittance of the stored beam was in agreement with calculations. Presently the configuration is being made operational

  19. Plasmons on the edge of MoS2 nanostructures

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer

    2014-01-01

    Using ab initio calculations we predict the existence of one-dimensional (1D), atomically confined plasmons at the edges of a zigzag MoS2 nanoribbon. The strongest plasmon originates from a metallic edge state localized on the sulfur dimers decorating the Mo edge of the ribbon. A detailed analysis...... of the dielectric function reveals that the observed deviations from the ideal 1D plasmon behavior result from single-particle transitions between the metallic edge state and the valence and conduction bands of the MoS2 sheet. The Mo and S edges of the ribbon are clearly distinguishable in calculated spatially...... resolved electron energy loss spectrum owing to the different plasmonic properties of the two edges. The edge plasmons could potentially be utilized for tuning the photocatalytic activity of MoS2 nanoparticles....

  20. Role of interlayer coupling in ultra thin MoS2

    KAUST Repository

    Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

    2012-01-01

    The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer

  1. Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers

    KAUST Repository

    Zhang, Chendong; Chuu, Chih-Piao; Ren, Xibiao; Li, Ming-yang; Li, Lain-Jong; Jin, Chuanhong; Chou, Mei-Yin; Shih, Chih-Kang

    2017-01-01

    der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function

  2. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu; Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2017-01-01

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize

  3. The effects of gate oxide thickness on radiation damage in MOS system

    International Nuclear Information System (INIS)

    Zhu Hui; Yan Rongliang; Wang Yu; He Jinming

    1988-01-01

    The dependences of the flatband voltage shift (ΔV FB ) and the threshold voltage shift (ΔV TH ) in MOS system on the oxide thickness (T ox ) and on total irradiated dose (D) of electron-beam and 60 Co γ-ray have been studied. It has been found that ΔV FB ∝ T ox 3 , with +10V of gate bias during irradiation for n-Si substrate MOS capacitors; ΔV TH ∝ T ox 3 D 2/3 , with 'on' gate bias during irradiation for n- and P-channel MOS transistors; ΔV TP ∝ T ox 2 D 2/3 , with 'off' gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to ∼T ox 3 dependence, the optimization of radiation hardening process for MOS system is also simply discussed

  4. First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y=F and OH) all-2D semiconductor/metal contacts

    KAUST Repository

    Gan, Liyong

    2013-06-13

    First-principles calculations are used to explore the geometry, bonding, and electronic properties of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) semiconductor/metal contacts. The structure of the interfaces is determined. Strong chemical bonds formed at the MoS2/Ti2C interface result in additional states next to the Fermi level, which extend over the three atomic layers of MoS2 and induce a metallic character. The interaction in MoS2/Ti2CY2, on the other hand, is weak and not sensitive to the specific geometry, and the semiconducting nature thus is preserved. The energy level alignment implies weak and strong n-type doping of MoS2 in MoS2/Ti2CF2 and MoS2/Ti2C(OH)2, respectively. The corresponding n-type Schottky barrier heights are 0.85 and 0.26 eV. We show that the MoS2/Ti2CF2 interface is close to the Schottky limit. At the MoS2/Ti2C(OH)2 interface, we find that a strong dipole due to charge rearrangement induces the Schottky barrier. The present interfaces are well suited for application in all-two-dimensional devices.

  5. First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y=F and OH) all-2D semiconductor/metal contacts

    KAUST Repository

    Gan, Liyong; Huang, Dan; Schwingenschlö gl, Udo; Zhao, Yu-Jun

    2013-01-01

    First-principles calculations are used to explore the geometry, bonding, and electronic properties of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) semiconductor/metal contacts. The structure of the interfaces is determined. Strong chemical bonds formed at the MoS2/Ti2C interface result in additional states next to the Fermi level, which extend over the three atomic layers of MoS2 and induce a metallic character. The interaction in MoS2/Ti2CY2, on the other hand, is weak and not sensitive to the specific geometry, and the semiconducting nature thus is preserved. The energy level alignment implies weak and strong n-type doping of MoS2 in MoS2/Ti2CF2 and MoS2/Ti2C(OH)2, respectively. The corresponding n-type Schottky barrier heights are 0.85 and 0.26 eV. We show that the MoS2/Ti2CF2 interface is close to the Schottky limit. At the MoS2/Ti2C(OH)2 interface, we find that a strong dipole due to charge rearrangement induces the Schottky barrier. The present interfaces are well suited for application in all-two-dimensional devices.

  6. Analysis of emittance compensation and simulation results to photo-cathode RF gun

    CERN Document Server

    LiuShengGuang

    2002-01-01

    The emittance compensation technology will be used on the photo-cathode RF gun for Shanghai SDUV-FEL. The space charge force and its effect on electron beam transverse emittance in RF gun is studied, the principle of emittance compensation in phase-space is discussed. The authors have designed a compensation solenoid and calculated its magnetic field distribution. Its performance has been studied by the code PARMELA. A simulation result indicates that the normalized transverse RMS emittance for electron beam of 1.5 nC is 1.612 pi mm centre dot mrad, electron energy E = 5.71 MeV

  7. Few-layer MoS2 as nitrogen protective barrier

    Science.gov (United States)

    Akbali, B.; Yanilmaz, A.; Tomak, A.; Tongay, S.; Çelebi, C.; Sahin, H.

    2017-10-01

    We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.

  8. Hydrothermal synthesis of flower-like MoS2 nanospheres for electrochemical supercapacitors.

    Science.gov (United States)

    Zhou, Xiaoping; Xu, Bin; Lin, Zhengfeng; Shu, Dong; Ma, Lin

    2014-09-01

    Flower-like MoS2 nanospheres were synthesized by a hydrothermal route. The structure and surface morphology of the as-prepared MoS2 was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The supercapacitive behavior of MoS2 in 1 M KCl electrolyte was studied by means of cyclic voltammetry (CV), constant current charge-discharge cycling (CD) and electrochemical impedance spectroscopy (EIS). The XRD results indicate that the as-prepared MoS2 has good crystallinity. SEM images show that the MoS2 nanospheres have uniform sizes with mean diameter about 300 nm. Many nanosheets growing on the surface make the MoS2 nanospheres to be a flower-like structure. The specific capacitance of MoS2 is 122 F x g(-1) at 1 A x g(-1) or 114 F x g(-1) at 2 mv s(-1). All the experimental results indicate that MoS2 is a promising electrode material for electrochemical supercapacitors.

  9. Growth, structure and stability of sputter-deposited MoS2 thin films

    Directory of Open Access Journals (Sweden)

    Reinhard Kaindl

    2017-05-01

    Full Text Available Molybdenum disulphide (MoS2 thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC substrates. Samples deposited at room temperature (RT and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films.

  10. Measured emittance dependence on injection method in laser plasma accelerators

    Science.gov (United States)

    Barber, Samuel; van Tilborg, Jeroen; Schroeder, Carl; Lehe, Remi; Tsai, Hai-En; Swanson, Kelly; Steinke, Sven; Nakamura, Kei; Geddes, Cameron; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

    2017-10-01

    The success of many laser plasma accelerator (LPA) based applications relies on the ability to produce electron beams with excellent 6D brightness, where brightness is defined as the ratio of charge to the product of the three normalized emittances. As such, parametric studies of the emittance of LPA generated electron beams are essential. Profiting from a stable and tunable LPA setup, combined with a carefully designed single-shot transverse emittance diagnostic, we present a direct comparison of charge dependent emittance measurements of electron beams generated by two different injection mechanisms: ionization injection and shock induced density down-ramp injection. Notably, the measurements reveal that ionization injection results in significantly higher emittance. With the down-ramp injection configuration, emittances less than 1 micron at spectral charge densities up to 2 pC/MeV were measured. This work was supported by the U.S. DOE under Contract No. DE-AC02-05CH11231, by the NSF under Grant No. PHY-1415596, by the U.S. DOE NNSA, DNN R&D (NA22), and by the Gordon and Betty Moore Foundation under Grant ID GBMF4898.

  11. Emittance growth in rf linacs

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1979-01-01

    As the space-charge limit is approached, the current that can be accelerated in an rf linac and the output emittance that can be expected are discussed. The role of the envelope equations to estimate limits is outlined. The results of numerical experiments to explore general properties of emittance growth are given

  12. Beam phase space and emittance

    International Nuclear Information System (INIS)

    Buon, J.

    1990-12-01

    The classical and elementary results for canonical phase space, the Liouville theorem and the beam emittance are reviewed. Then, the importance of phase portraits to obtain a geometrical description of motion is emphasized, with examples in accelerator physics. Finally, a statistical point of view is used to define beam emittance, to study its law of approximate conservation and to treat two particular examples

  13. Interlocking Friction Governs the Mechanical Fracture of Bilayer MoS2.

    Science.gov (United States)

    Jung, Gang Seob; Wang, Shanshan; Qin, Zhao; Martin-Martinez, Francisco J; Warner, Jamie H; Buehler, Markus J

    2018-04-24

    A molybdenum disulfide (MoS 2 ) layered system is a two-dimensional (2D) material, which is expected to provide the next generation of electronic devices together with graphene and other 2D materials. Due to its significance for future electronics applications, gaining a deep insight into the fundamental mechanisms upon MoS 2 fracture is crucial to prevent mechanical failure toward reliable applications. Here, we report direct experimental observation and atomic modeling of the complex failure behaviors of bilayer MoS 2 originating from highly variable interlayer frictions, elucidated with in situ transmission electron microscopy and large-scale reactive molecular dynamics simulations. Our results provide a systematic understanding of the effects that different stacking and loading conditions have on the failure mechanisms and crack-tip behaviors in the bilayer MoS 2 systems. Our findings unveil essential properties in fracture of this 2D material and provide mechanistic insight into its mechanical failure.

  14. Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

    International Nuclear Information System (INIS)

    Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

    2010-01-01

    Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

  15. Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Li, Ming-Yang; Shakfa, Mohammad Khaled; Anjum, Dalaver H.; Hedhili, Mohamed N.; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2

  16. Sub-nanometer emittance monitor for high brightness synchrotron radiation source

    International Nuclear Information System (INIS)

    Nakajima, K.

    1991-01-01

    Method of measuring a very small beam emittance in electron storage rings is presented. The monitor can sense an intrinsic emittance of beam particles by detecting the angular distribution of Compton scatterings of laser photons on beam electrons. It is possible to achieve measurement resolution smaller than 10 -9 m-rad without difficulty. (author)

  17. Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles

    Science.gov (United States)

    Jeon, Sumin; Kim, Minwoo; Jia, Jingyuan; Park, Jin-Hong; Lee, Sungjoo; Song, Young Jae

    2018-05-01

    Black phosphorus (BP), a new family of two dimensional (2D) layered materials, is an attractive material for future electronic, photonic and chemical sensing devices, thanks to its high carrier density and a direct bandgap of 0.3-2.0 eV, depending on the number of layers. Controllability over the properties of BP by electrical or chemical modulations is one of the critical requirements for future various device applications. Herein, we report a new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs). MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. Scanning electron microscopy (SEM) confirmed the size and distribution of MoS2 NPs with different density. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012-1013 cm-2.

  18. Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains

    International Nuclear Information System (INIS)

    Hao, Song; Yang, Bingchu; Gao, Yongli

    2016-01-01

    The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS 2 domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS 2 domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS 2 crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS 2 single crystals. The thickness of triangle and polygon shape MoS 2 crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS 2 crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS 2 -based devices.

  19. Evaluating Mechanical Properties of Few Layers MoS2 Nanosheets-Polymer Composites

    Directory of Open Access Journals (Sweden)

    Muhammad Bilal Khan

    2017-01-01

    Full Text Available The reinforcement effects of liquid exfoliated molybdenum disulphide (MoS2 nanosheets, dispersed in polystyrene (PS matrix, are evaluated here. The range of composites (0~0.002 volume fraction (Vf MoS2-PS is prepared via solution casting. Size selected MoS2 nanosheets (3~4 layers, with a lateral dimension L 0.5~1 µm, have improved Young’s modulus up to 0.8 GPa for 0.0002 Vf MoS2-PS as compared to 0.2 GPa observed for PS only. The ultimate tensile strength (UTS is improved considerably (~×3 with a minute addition of MoS2 nanosheets (0.00002 Vf. The MoS2 nanosheets lateral dimension and number of layers are approximated using atomic force microscopy (AFM. The composites formation is confirmed using X-ray diffraction (XRD and scanning electron microscopy (SEM. Theoretical predicted results (Halpin-Tsai model are well below the experimental findings, especially at lower concentrations. Only at maximum concentrations, the experimental and theoretical results coincide. The high aspect ratio of MoS2 nanosheets, homogeneous dispersion inside polymer, and their probable planar orientation are the possible reasons for the effective stress transfer, resulting in enhanced mechanical characteristics. Moreover, the micro-Vickers hardness (HV of the MoS2-PS is also improved from 19 (PS to 23 (0.002 Vf MoS2-PS as MoS2 nanosheets inclusion may hinder the deformation more effectively.

  20. Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

    Energy Technology Data Exchange (ETDEWEB)

    Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A. [Russian Academy of Sciences, Budker Institute of Nuclear Physics, Siberian Branch (Russian Federation)

    2017-02-15

    Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surface that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.

  1. A numerical study of emittance growths in RF guns

    CERN Document Server

    Masuda, K; Sobajima, M; Kitagaki, J; Ohnishi, M; Toku, H; Yoshikawa, K

    1999-01-01

    A beam with greatly reduced emittance is required for further improvements of FELs, in particular, for FELs of shorter wavelengths, and of narrower bandwidths. From this viewpoint, the BNL/SLAC/UCLA 1.6-cell S-band photocathode RF gun performance characteristics were calculated, first in order to evaluate what may contribute to the emittance growths in photocathode RF guns. We developed an RF gun to produce an electron beam with an extremely low emittance, by using a 2-D simulation code. It is found that, by optimizing the laser injection phase, the drive laser spot radius and the cavity shape around the laser spot, the beam emittance by the 1.6-cell RF gun can be greatly reduced to 2.1 pi mm mrad, from the previous 4.4 pi mm mrad of the original shape.

  2. An Online Multisensor Data Fusion Framework for Radar Emitter Classification

    Directory of Open Access Journals (Sweden)

    Dongqing Zhou

    2016-01-01

    Full Text Available Radar emitter classification is a special application of data clustering for classifying unknown radar emitters in airborne electronic support system. In this paper, a novel online multisensor data fusion framework is proposed for radar emitter classification under the background of network centric warfare. The framework is composed of local processing and multisensor fusion processing, from which the rough and precise classification results are obtained, respectively. What is more, the proposed algorithm does not need prior knowledge and training process; it can dynamically update the number of the clusters and the cluster centers when new pulses arrive. At last, the experimental results show that the proposed framework is an efficacious way to solve radar emitter classification problem in networked warfare.

  3. Localization of Narrowband Single Photon Emitters in Nanodiamonds.

    Science.gov (United States)

    Bray, Kerem; Sandstrom, Russell; Elbadawi, Christopher; Fischer, Martin; Schreck, Matthias; Shimoni, Olga; Lobo, Charlene; Toth, Milos; Aharonovich, Igor

    2016-03-23

    Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bioimaging. However, current understanding of the origin of these emitters is extremely limited. In this work, we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond and are directly relevant to fabrication of novel quantum optics devices and sensors.

  4. Emittance measurements in low energy ion storage rings

    Science.gov (United States)

    Hunt, J. R.; Carli, C.; Resta-López, J.; Welsch, C. P.

    2018-07-01

    The development of the next generation of ultra-low energy antiproton and ion facilities requires precise information about the beam emittance to guarantee optimum performance. In the Extra-Low ENergy Antiproton storage ring (ELENA) the transverse emittances will be measured by scraping. However, this diagnostic measurement faces several challenges: non-zero dispersion, non-Gaussian beam distributions due to effects of the electron cooler and various systematic errors such as closed orbit offsets and inaccurate rms momentum spread estimation. In addition, diffusion processes, such as intra-beam scattering might lead to emittance overestimates. Here, we present algorithms to efficiently address the emittance reconstruction in presence of the above effects, and present simulation results for the case of ELENA.

  5. Beam dynamics in rf guns and emittance correction techniques

    International Nuclear Information System (INIS)

    Serafini, L.

    1994-01-01

    In this paper we present a general review of beam dynamics in a laser-driven rf gun. The peculiarity of such an accelerating structure versus other conventional multi-cell linac structures is underlined on the basis of the Panofsky-Wenzel theorem, which is found to give a theoretical background for the well known Kim's model. A basic explanation for some proposed methods to correct rf induced emittance growth is also derived from the theorem. We also present three emittance correction techniques for the recovery of space-charge induced emittance growth, namely the optimum distributed disk-like bunch technique, the use of rf spatial harmonics to correct spherical aberration induced by space charge forces and the technique of emittance filtering by clipping the electron beam. The expected performances regarding the beam quality achievable with different techniques, as predicted by scaling laws and simulations, are analyzed, and, where available, compared to experimental results. (orig.)

  6. Simulación y modelado de transistores MOS de doble puerta

    OpenAIRE

    Cartujo Cassinello, Pedro

    2013-01-01

    En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una sección transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribución de electrones con una amplia variedad de valores de todos los parámentros tecnológicos y condiciones de operación, y se...

  7. Simulaci??n y modelado de transistores MOS de doble puerta

    OpenAIRE

    Cartujo Cassinello, Pedro

    2000-01-01

    En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una secci??n transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribuci??n de electrones con una amplia variedad de valores de todos los par??mentros tecnol??gicos y condiciones de operaci??n,...

  8. Synthesis of coaxial nanotubes of MoS2 and carbon

    International Nuclear Information System (INIS)

    Reza, C.; Perez, M.; Santiago, P.

    2002-01-01

    The di chalcogenides WS 2 and MoS 2 by their tubular properties were combined. It was synthesized coaxial structures of MoS 2 with C with the purpose to studying the possible structural changes of the MoS 2 nano tubes at was submitted to a propylene gas flux as carbon precursor in a thermal treatment. Studies of structural characterization by Transmission Electron Microscopy (Tem) were realized. The theoretical simulation of the structure was realized using an algorithm type multilayer. The possibility of the nano tubes are applied to gas storage as can be the hydrogen arouse interest by the energy production. (Author)

  9. BATMAN: MOS Spectroscopy on Demand

    Science.gov (United States)

    Molinari, E.; Zamkotsian, F.; Moschetti, M.; Spano, P.; Boschin, W.; Cosentino, R.; Ghedina, A.; González, M.; Pérez, H.; Lanzoni, P.; Ramarijaona, H.; Riva, M.; Zerbi, F.; Nicastro, L.; Valenziano, L.; Di Marcantonio, P.; Coretti, I.; Cirami, R.

    2016-10-01

    Multi-Object Spectrographs (MOS) are the major instruments for studying primary galaxies and remote and faint objects. Current object selection systems are limited and/or difficult to implement in next generation MOS for space and ground-based telescopes. A promising solution is the use of MOEMS devices such as micromirror arrays, which allow the remote control of the multi-slit configuration in real time. TNG is hosting a novelty project for real-time, on-demand MOS masks based on MOEMS programmable slits. We are developing a 2048×1080 Digital-Micromirror-Device-based (DMD) MOS instrument to be mounted on the Galileo telescope, called BATMAN. It is a two-arm instrument designed for providing in parallel imaging and spectroscopic capabilities. With a field of view of 6.8×3.6 arcmin and a plate scale of 0.2 arcsec per micromirror, this astronomical setup can be used to investigate the formation and evolution of galaxies. The wavelength range is in the visible and the spectral resolution is R=560 for a 1 arcsec object, and the two arms will have 2k × 4k CCD detectors. ROBIN, a BATMAN demonstrator, has been designed, realized and integrated. We plan to have BATMAN first light by mid-2016.

  10. The OverMOS project

    Energy Technology Data Exchange (ETDEWEB)

    Das, D.; Dopke, J., E-mail: jens.dopke@stfc.ac.uk; McMahon, S.J.; Turchetta, R.; Villani, G.; Wilson, F.; Worm, S.

    2016-07-11

    The OverMOS project aims to create a fast radiation hard tracking detector sensor, based on High Resistivity CMOS technology. In a first prototype submission, different pixel and charge collection node geometries have been produced, which have lately been returned from fabrication and are currently under test.

  11. WE-AB-204-12: Dosimetry at the Sub-Cellular Scale of Auger-Electron Emitter 99m-Tc in a Mouse Single Thyroid Follicle Model

    Energy Technology Data Exchange (ETDEWEB)

    Taborda, A; Benabdallah, N; Desbree, A [Institut de Radioprotection et de Surete Nucleaire, Fontenay-aux-roses (France)

    2015-06-15

    Purpose: To perform a dosimetry study at the sub-cellular scale of Auger-electron emitter 99m-Tc using a mouse single thyroid cellular model to investigate the contribution of the 99m-Tc Auger-electrons to the absorbed dose and possible link to the thyroid stunning in in vivo experiments in mice, recently reported in literature. Methods: The simulation of S-values for Auger-electron emitting radionuclides was performed using both the recent MCNP6 software and the Geant4-DNA extension of the Geant4 toolkit. The dosimetric calculations were validated through comparison with results from literature, using a simple model of a single cell consisting of two concentric spheres of unit density water and for six Auger-electron emitting radionuclides. Furthermore, the S-values were calculated using a single thyroid follicle model for uniformly distributed 123-I and 125-I radionuclides and compared with published S-values. After validation, the simulation of the S-values was performed for the 99m-Tc radionuclide within the several mouse thyroid follicle cellular compartments, considering the radiative and non-radiative transitions of the 99m-Tc radiation spectrum. Results: The calculated S-values using MCNP6 are in good agreement with the results from literature, validating its use for the 99m-Tc S-values calculations. The most significant absorbed dose corresponds to the case where the radionuclide is uniformly distributed in the follicular cell’s nucleus, with a S-value of 7.8 mGy/disintegration, due mainly to the absorbed Auger-electrons. The results show that, at a sub-cellular scale, the emitted X-rays and gamma particles do not contribute significantly to the absorbed dose. Conclusion: In this work, MCNP6 was validated for dosimetric studies at the sub-cellular scale. It was shown that the contribution of the Auger-electrons to the absorbed dose is important at this scale compared to the emitted photons’ contribution and can’t be neglected. The obtained S

  12. Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.

    Science.gov (United States)

    Chiappe, Daniele; Scalise, Emilio; Cinquanta, Eugenio; Grazianetti, Carlo; van den Broek, Bas; Fanciulli, Marco; Houssa, Michel; Molle, Alessandro

    2014-04-02

    The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS2 by forming two-dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS2 hosting substrate they are qualified by a gap-less density of states. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Transverse and longitudinal emittance measurements in the ELSA linac

    International Nuclear Information System (INIS)

    Loulergue, A.; Dowell, D.H.; Joly, S.; De Brion, J.P.; Haouat, G.; Schumann, F.

    1997-01-01

    The ELSA RF linac photoinjector has been designed to deliver high-brightness electron beams. The present paper deals with the transverse and longitudinal emittance measurements, at different locations along the ELSA beam line, and the analysis of their variations as a function of the photoinjector parameters : magnetic field generated by the anode focusing lens, bunch charge and pulse duration. While transverse emittance has been already studied in other similar installations, there has been little study of the electron beam longitudinal dynamics. Experimental results are presented and compared to simulation-code expectations. For 2.0 nC, 85 A electron bunches, a normalized rms emittance of 2 π mm mrad and a brightness of 4.5 x 10 13 A/(π m rad) 2 at the linac exit have been measured as well as less than 10 keV rms energy spread (or less than 0.1% at 16.5 MeV). (orig.)

  14. DC-SC Photoinjector with Low Emittance at Peking University

    CERN Document Server

    Xiang Rong; Hao, J; Huang, Senlin; Lu Xiang Yang; Quan, Shengwen; Zhang, Baocheng; Zhao, Kui

    2005-01-01

    High average power Free Electron Lasers require the high quality electron beams with the low emittance and the sub-picosecond bunches. The design of DC-SC photoinjector, directly combining a DC photoinjector with an SRF cavity, can produce high average current beam with moderate bunch charge and high duty factor. Because of the DC gun, the emittance increases quickly at the beginning, so a carefully design is needed to control that. In this paper, the simulation of an upgraded design has been done to lower the normalized emittance below 1.5mm·mrad. The photoinjector consists of a DC gap and a 2+1/2-cell SRF cavity, and it is designed to produce 4.2 MeV electron beams at 100pC bunch charge and 81.25MHz repetition rate (8 mA average current).

  15. Exciton-dominant Electroluminescence from a Diode of Monolayer MoS2

    Science.gov (United States)

    2014-05-14

    injected electrons and holes, is a reliable technique to study exciton recombination processes in monolayer MoS2, including val- ley and spin excitation...temperature. After superimposing a white light scattering image of the de - vice, we find that the electroluminescence is localized at the edge of the...We find the emerged feature (labeled NX) peaks at 550 nm with energy of 2.255 eV. In low dimensional system, like monolayer MoS2, Coulomb interactions

  16. Electrohydrodynamic emitters of ion beams

    International Nuclear Information System (INIS)

    Dudnikov, V.G.; Shabalin, A.L.

    1990-01-01

    Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

  17. Nanodiamond Emitters of Single Photons

    Directory of Open Access Journals (Sweden)

    Vlasov I.I.

    2015-01-01

    Full Text Available Luminescence properties of single color centers were studied in nanodiamonds of different origin. It was found that single photon emitters could be realized even in molecularsized diamond (less than 2 nm capable of housing stable luminescent center “silicon-vacancy.” First results on incorporation of single-photon emitters based on luminescent nanodiamonds in plasmonic nanoantennas to enhance the photon count rate and directionality, diminish the fluorescence decay time, and provide polarization selectivity are presented.

  18. MoS2 @HKUST-1 Flower-Like Nanohybrids for Efficient Hydrogen Evolution Reactions.

    Science.gov (United States)

    Wang, Chengli; Su, Yingchun; Zhao, Xiaole; Tong, Shanshan; Han, Xiaojun

    2018-01-24

    A novel MoS 2 -based flower-like nanohybrid for hydrogen evolution was fabricated through coating the Cu-containing metal-organic framework (HKUST-1) onto MoS 2 nanosheets. It is the first time that MoS 2 @HKUST-1 nanohybrids have been reported for the enhanced electrochemical performance of HER. The morphologies and components of the MoS 2 @HKUST-1 flower-like nanohybrids were characterized by scanning electron microscopy, X-ray diffraction analysis and Fourier transform infrared spectroscopy. Compared with pure MoS 2 , the MoS 2 @HKUST-1 hybrids exhibit enhanced performance on hydrogen evolution reaction with an onset potential of -99 mV, a smaller Tafel slope of 69 mV dec -1 , and a Faradaic efficiency of nearly 100 %. The MoS 2 @HKUST-1 flower-like nanohybrids exhibit excellent stability in acidic media. This design opens new possibilities to effectively synthesize non-noble metal catalysts with high performance for the hydrogen evolution reaction (HER). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Beam emittance reduction during operation of Indus-2

    Energy Technology Data Exchange (ETDEWEB)

    Fakhri, Ali Akbar, E-mail: fakhri@rrcat.gov.in; Kant, Pradeep; Ghodke, A. D.; Singh, Gurnam [Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2015-11-15

    Indus-2 storage ring is a 2.5 GeV third generation synchrotron radiation source. This source was commissioned using a moderate optics. Beam injection was accomplished using an off momentum electron beam to avoid difficulties faced in storage of beam at 550 MeV. The injection procedure and relevant beam dynamical studies are discussed. The switch over from the moderate optics to low emittance optics is done at 2.5 GeV after storing the electron beam. The procedure evolved to reduce the beam emittance and its implementation during the operation is discussed.

  20. Graphene field emitters: A review of fabrication, characterization and properties

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Leifeng, E-mail: chlf@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yu, Hu; Zhong, Jiasong; Song, Lihui [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Wu, Jun, E-mail: wujun@hdu.edu.cn [Institute of Electron Device & Application, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018 (China); Su, Weitao [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

    2017-06-15

    Highlights: • The preparation, characterization and field emission properties for Gs are reviewed. • The review provides an updated progress on design and construction of Gs field emitters. • The review offers fundamental insights into understanding and design of Gs emitters. • The review can broach the subject and inspire readers in field of Gs based emitters. - Abstract: Graphenes are beneficial to electrons field emission due to its high aspect ratio, high carrier density, the larger carrier mobility, excellent electrical and thermal conductivity, excellent mechanical strength and chemical stability. In recent years, graphene or reduced oxide graphene field emitters have been successfully constructed by various methods such as chemical vapor deposition, chemical exfoliation, electrophoretic deposition, screen-printing and chemical synthesis methods. Graphene emitters are tried to construct in distribution with some angles or vertical orientation with respect to the substrate surface. The vertical alignment of graphene sheets or edges arrays can facilitate efficient electron emission from the atomically thick sheets. Therefore they have even more a low turn-on and threshold-field electronic field, high field enhancement factor, high current stability and high luminance. In this review, we shortly survey and discuss recent research progress in graphene field emission properties with particular an emphasis on their preparing method, characterization and applications in devices especially for vertical graphene and single layer graphene, also including their challenges and future prospects.

  1. Experimental investigation of thermal emittance components of copper photocathode

    Directory of Open Access Journals (Sweden)

    H. J. Qian

    2012-04-01

    Full Text Available With progress of photoinjector technology, thermal emittance has become the primary limitation of electron beam brightness. Extensive efforts have been devoted to study thermal emittance, but experiment results differ between research groups and few can be well interpreted. Besides the ambiguity of photoemission mechanism, variations of cathode surface conditions during cathode preparation, such as work function, field enhancement factor, and surface roughness, will cause thermal emittance differences. In this paper, we report an experimental study of electric field dependence of copper cathode quantum efficiency (QE and thermal emittance in a radio frequency (rf gun, through which in situ cathode surface parameters and thermal emittance contributions from photon energy, Schottky effect, and surface roughness are extracted. It is found the QE of a copper cathode illuminated by a 266 nm UV laser increased substantially to 1.5×10^{-4} after cathode cleaning during rf conditioning, and a copper work function of 4.16 eV, which is much lower than nominal value (4.65 eV, was measured. Experimental results also show a thermal emittance growth as much as 0.92  mm mrad/mm at 50  MV/m due to the cathode surface roughness effect, which is consistent with cathode surface morphology measurements.

  2. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  3. Charging effect at grain boundaries of MoS2

    Science.gov (United States)

    Yan, Chenhui; Dong, Xi; Li, Connie H.; Li, Lian

    2018-05-01

    Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS2 on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS2, providing insights into the significant impact GBs can have on materials properties.

  4. Investigations on cermet electrodes for thermionic emitters

    International Nuclear Information System (INIS)

    Schmidt, D.; Nazare, S.

    1975-01-01

    Unstable Ba 2 CaWO 6 -W with their own supply of Ba, as well as stable UO 2 -Mo-emitter cermets that have to be operated with an external Ba-source, have been prepared by axial hot pressing. The relevant properties of these cermets such as electrical resistivity and thermal expansion are reported and compared with theoretical predictions. The electron emission of these materials is discussed on the basis of the surface films formed. It provides the basis for optimising the behavior of these materials

  5. Supercapacitive properties of hydrothermally synthesized sphere like MoS2 nanostructures

    International Nuclear Information System (INIS)

    Krishnamoorthy, Karthikeyan; Veerasubramani, Ganesh Kumar; Radhakrishnan, Sivaprakasam; Kim, Sang Jae

    2014-01-01

    Highlights: • MoS 2 nanostructures were synthesized by hydrothermal method. • Randomly stacked MoS 2 was obtained. • FE-SEM studies show the sphere like morphology of MoS 2 . • Specific capacitance of 92.85 F/g was achieved using charge–discharge analysis. • MoS 2 electrode shows capacitance retention of about 93.8% after 1000 cycles. - Abstract: In this communication, we have investigated the supercapacitive behaviour of MoS 2 nanostructures prepared by a facile one-pot hydrothermal approach using ammonium heptamolybdate and thiourea as starting materials. The X-ray diffraction study revealed the formation of randomly stacked layers of MoS 2 . The field-emission scanning electron microscope studies suggested the formation of sphere like MoS 2 nanostructures and a plausible mechanism for the formation of the obtained structure is discussed. The cyclic voltammetry study shows the typical rectangular shaped curves with a specific capacitance of 106 F/g at a scan rate of 5 mV/s. Galvanostatic charge–discharge measurements suggested the maximum specific capacitance of about 92.85 F/g at discharge current density of 0.5 mA/cm 2 . Cyclic stability tests revealed the capacitance retention of about 93.8% after 1000 cycles suggesting a good cyclic capacity of the prepared MoS 2 . The electrochemical impedance spectroscopic results such as Nyquist and Bode phase angle plots suggested that the hydrothermally synthesized MoS 2 nanostructures will be a suitable candidate for electrochemical supercapacitor applications

  6. Plasma-assisted synthesis of MoS2

    Science.gov (United States)

    Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

    2018-03-01

    There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

  7. Transverse-to-longitudinal Emittance-exchange with an Energy Chirped Beam

    Energy Technology Data Exchange (ETDEWEB)

    Thangaraj, J.; Ruan, J.; Johnson, A.S.; Thurman-Keup, R.; Lumpkin, A.H.; Santucci, J.; Sun, Y.-E; Maxwell, T.; Edwards, H.; /Fermilab

    2012-05-01

    Emittance exchange has been proposed to increase the performance of free electron lasers by tailoring the phase space of an electron beam. The principle of emittance exchange - where the transverse phase space of the electron beam is exchanged with the longitudinal phase space - has been demonstrated recently at the A0 photoinjector. The experiment used a low charge bunch (250 pC) with no energy chirp. Theory predicts an improvement in the emittance exchange scheme when the incoming beam has an energy chirp imparted on it. The energy chirp helps to overcome the thick lens effect of the deflecting mode cavity and other second order effects that might lead to an incomplete emittance exchange at higher charges. In this work, we report experimental and simulation results from operating the emittance exchange beam line using an energy chirped beam with higher charge (500 pC) at different RF-chirp settings.

  8. MOS modeling hierarchy including radiation effects

    International Nuclear Information System (INIS)

    Alexander, D.R.; Turfler, R.M.

    1975-01-01

    A hierarchy of modeling procedures has been developed for MOS transistors, circuit blocks, and integrated circuits which include the effects of total dose radiation and photocurrent response. The models were developed for use with the SCEPTRE circuit analysis program, but the techniques are suitable for other modern computer aided analysis programs. The modeling hierarchy permits the designer or analyst to select the level of modeling complexity consistent with circuit size, parametric information, and accuracy requirements. Improvements have been made in the implementation of important second order effects in the transistor MOS model, in the definition of MOS building block models, and in the development of composite terminal models for MOS integrated circuits

  9. Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

    KAUST Repository

    Park, Woojin

    2017-09-07

    Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.

  10. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    International Nuclear Information System (INIS)

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  11. Transverse emittance growth in staged laser-wakefield acceleration

    Directory of Open Access Journals (Sweden)

    T. Mehrling

    2012-11-01

    Full Text Available We present a study on the emittance evolution of electron bunches, externally injected into laser-driven plasma waves using the three-dimensional particle-in-cell (PIC code OSIRIS. Results show order-of-magnitude transverse emittance growth during the injection process, if the electron bunch is not matched to its intrinsic betatron motion inside the wakefield. This behavior is supported by analytic theory reproducing the simulation data to a percent level. The length over which the full emittance growth develops is found to be less than or comparable to the typical dimension of a single plasma module in current multistage designs. In addition, the analytic theory enables the quantitative prediction of emittance degradation in two consecutive accelerators coupled by free-drift sections, excluding this as a scheme for effective emittance-growth suppression, and thus suggests the necessity of beam-matching sections between acceleration stages with fundamental implications on the overall design of staged laser-wakefield accelerators.

  12. Hydrothermal synthesis of layer-controlled MoS_2/graphene composite aerogels for lithium-ion battery anode materials

    International Nuclear Information System (INIS)

    Zhao, Bing; Wang, Zhixuan; Gao, Yang; Chen, Lu; Lu, Mengna; Jiao, Zheng; Jiang, Yong; Ding, Yuanzhang; Cheng, Lingli

    2016-01-01

    Highlights: • Layer-controlled MoS_2/GA composites are synthesized by a facile hydrothermal route. • Few-layer (5–15 layers) MoS_2 nanosheets are decorated on the surface of GNS homogeneously and tightly. • The growth mechanism of the lay-controlled MoS_2/GA composites is proposed. • The composite delivers high specific capacity of 1085.0 mAh g"−"1 at 0.1 A g"−"1. - Abstract: Layer-controlled MoS_2/graphene aerogels (MoS_2/GA) composites are synthesized by a facile hydrothermal route, in which few-layer (5–15 layers) MoS_2 nanosheets with high crystalline are decorated on the surface of graphene nanosheets homogeneously and tightly. The number of the MoS_2 layers can be easily controlled through adjusting the amount of molybdenum source in the reaction system. Moreover, the growth mechanism of the lay-controlled MoS_2/GA composites is proposed. The three-dimensional MoS_2/GA with macroporous micro-structure not only shortens the transportation length of electrons and ions, but also restrains the re-stacking of MoS_2 effectively, stabilizing the electrode structure during repeated charging/discharging processes. Electrochemical tests demonstrate that this few-layer MoS_2/GA composite exhibits a high reversible capacity of 1085.0 mAh g"−"1 at current density of 100 mA g"−"1, as well as extraordinarily high cycling stability and rate capability.

  13. Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

    Science.gov (United States)

    Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

    2017-12-13

    In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

  14. Radiation emitter-detector package

    International Nuclear Information System (INIS)

    O'Brien, J.T.; Limm, A.C.; Nyul, P.; Tassia, V.S. Jr.

    1978-01-01

    Mounted on the metallic base of a radiation emitter-detector is a mounting block is a first projection, and a second projection. A radiation detector is on the first projection and a semiconductor electroluminescent device, i.e., a radiation emitter, is on the second projection such that the plane of the recombination region of the electroluminescent device is perpendicular to the radiation incident surface of the radiation detector. The electroluminescent device has a primary emission and a secondary emission in a direction different from the primary emission. A radiation emitter-detector package as described is ideally suited to those applications wherein the secondary radiation of the electroluminescent device is fed into a feedback circuit regulating the biasing current of the electroluminescent device

  15. Secondary electron ion source neutron generator

    Science.gov (United States)

    Brainard, John P.; McCollister, Daryl R.

    1998-01-01

    A neutron generator employing an electron emitter, an ion source bombarded by the electrons from the electron emitter, a plasma containment zone, and a target situated between the plasma containment zone and the electron emitter. The target contains occluded deuterium, tritium, or a mixture thereof

  16. Emittance growth of bunched beams in bends

    International Nuclear Information System (INIS)

    Carlsten, B.E.; Raubenheimer, T.O.

    1995-01-01

    Talman [Phys. Rev. Lett. 56, 1429 (1986)] has proposed a novel relativistic effect that occurs when a charged particle beam is bent in the magnetic field from an external dipole. The consequence of this effect is that the space-charge forces from the particles do not exhibit the usual inverse-square energy dependence and some part of them are, in fact, independent of energy. This led to speculation that this effect could introduce significant emittance growth for a bending electron beam. Subsequently, it was shown that this effect's influence on the beam's transverse motion is canceled for a dc beam by a potential depression within the beam (to first order in the beam radius divided by the bend radius). In this paper, we extend the analysis to include short bunch lengths (as compared to the beam pipe dimensions) and find that there is no longer the cancellation for forces both transverse to and in the direction of motion. We provide an estimate for the emittance growth as a function of bend angle, beam radius, and current, and for magnetic compression of an electron bunch

  17. Beam phase space and emittance

    International Nuclear Information System (INIS)

    Buon, J.

    1992-02-01

    The classical and elementary results for canonical phase space, the Liouville theorem and the beam emittance are reviewed. Then, the importance of phase portraits to obtain a geometrical description of motion is emphasized, with examples in accelerator physics. Finally, a statistical point of view is used to define beam emittance, to study its law of approximate conservation, with three particular examples, and to introduce a beam envelope-ellipse and the β-function, emphasing the statistical features of its properties. (author) 14 refs.; 11 figs

  18. Combustion powered thermophotovoltaic emitter system

    Energy Technology Data Exchange (ETDEWEB)

    McHenry, R.S. [Naval Academy, Annapolis, MD (United States). Naval Architecture, Ocean and Marine Engineering

    1995-07-01

    The US Naval Academy (USNA) has recently completed an engineering design project for a high temperature thermophotovoltaic (TPV) photon emitter. The final apparatus was to be portable, completely self contained, and was to incorporate cycle efficiency optimization such as exhaust stream recuperation. Through computer modeling and prototype experimentation, a methane fueled emitter system was designed from structural ceramic materials to fulfill the high temperature requirements necessary for high system efficiency. This paper outlines the engineering design process, discusses obstacles and solutions encountered, and presents the final design.

  19. Investigation on nonlinear optical properties of MoS2 nanoflakes grown on silicon and quartz substrates

    Science.gov (United States)

    Bayesteh, Samaneh; Zahra Mortazavi, Seyedeh; Reyhani, Ali

    2018-05-01

    In this study, MoS2 nanoflakes were directly grown on different substrates—Si/SiO2 and quartz—by one-step thermal chemical vapor deposition using MoO3 and sulfide powders as precursors. Scanning electron microscopy and x-ray diffraction patterns demonstrated the formation of MoS2 structures on both substrates. Moreover, UV-visible and photoluminescence analysis confirmed the formation of MoS2 few-layer structures. According to Raman spectroscopy, by assessment of the line width and frequency shift differences between the and A 1g, it was inferred that the MoS2 grown on the silicon substrate was monolayer and that grown on the quartz substrate was multilayer. In addition, open-aperture and close-aperture Z-scan techniques were employed to study the nonlinear optical properties including nonlinear absorption and nonlinear refraction of the grown MoS2. All experiments were performed using a diode laser with a wavelength of 532 nm as the light source. It is noticeable that both samples demonstrate obvious self-defocusing behavior. The monolayer MoS2 grown on the silicon substrate displayed considerable two-photon absorption while, the multilayer MoS2 synthesized on the quartz exhibited saturable absorption. In general, few-layered MoS2 would be useful for the development of nanophotonic devices like optical limiters, optical switchers, etc.

  20. Highly sensitive MoS2 photodetectors with graphene contacts

    Science.gov (United States)

    Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

    2018-05-01

    Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

  1. Band structural properties of MoS2 (molybdenite)

    International Nuclear Information System (INIS)

    Gupta, V.P.

    1980-01-01

    Semiconductivity and superconductivity in MoS 2 (molybdenite) can be understood in terms of the band structure of MoS 2 . The band structural properties of MoS 2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)

  2. Efficient simulation of power MOS transistors

    NARCIS (Netherlands)

    Ugryumova, M.; Schilders, W.H.A.

    2011-01-01

    In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

  3. Emittances Studies at the Fermilab/NICADD Photoinjector Laboratory

    CERN Document Server

    Tikhoplav, Rodion; Melissinos, A C; Regis-Guy Piot, Philippe

    2005-01-01

    The Fermilab/NICADD photoinjector incorporates an L-band rf-gun capable of generating 1-10 nC bunches. The bunches are then accelerated to 16 MeV with a TESLA superconducting cavity. In the present paper we present parametric studies of transverse emittances and energy spread for a various operating points of the electron source (RF-gun E-field, laser length and spot size, and solenoid settings). We especially study the impact, on transverse emittance, of Gaussian and Plateau temporal distribution of the photocathode drive-laser.

  4. Silicon Mie resonators for highly directional light emission from monolayer MoS2

    Science.gov (United States)

    Cihan, Ahmet Fatih; Curto, Alberto G.; Raza, Søren; Kik, Pieter G.; Brongersma, Mark L.

    2018-05-01

    Controlling light emission from quantum emitters has important applications, ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries such as wires and spheres support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a silicon nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a silicon nanowire.

  5. Auger electron emitter against multiple myeloma - targeted endo-radio-therapy with {sup 125}I-labeled thymidine analogue 5-iodo-4'-thio-2'-deoxyuridine

    Energy Technology Data Exchange (ETDEWEB)

    Morgenroth, Agnieszka, E-mail: amorgenroth@ukaachen.de [Nuclear Medicine Clinic, University Ulm, Albert-Einstein-Allee 23, D-89081 Ulm (Germany); Nuclear Medicine Clinic, University Aachen, RWTH, Pauwelsstrasse 30, D-52074 Aachen (Germany); Dinger, Cornelia; Zlatopolskiy, Boris D.; Al-Momani, Ehab; Glatting, Gerhard [Nuclear Medicine Clinic, University Ulm, Albert-Einstein-Allee 23, D-89081 Ulm (Germany); Mottaghy, Felix M. [Nuclear Medicine Clinic, University Aachen, RWTH, Pauwelsstrasse 30, D-52074 Aachen (Germany); Reske, Sven N. [Nuclear Medicine Clinic, University Ulm, Albert-Einstein-Allee 23, D-89081 Ulm (Germany)

    2011-10-15

    Introduction: Multiple myeloma (MM) is a plasma cell malignancy characterized by accumulation of malignant, terminally differentiated B cells in the bone marrow. Despite advances in therapy, MM remains an incurable disease. Novel therapeutic approaches are, therefore, urgently needed. Auger electron-emitting radiopharmaceuticals are attractive for targeted nano-irradiation therapy, given that DNA of malignant cells is selectively addressed. Here we evaluated the antimyeloma potential of the Auger electron-emitting thymidine analogue {sup 125}I-labeled 5-iodo-4'-thio-2'-deoxyuridine ([{sup 125}I]ITdU). Methods: Cellular uptake and DNA incorporation of [{sup 125}I]ITdU were determined in fluorodeoxyuridine-pretreated KMS12BM, U266, dexamethasone-sensitive MM1.S and -resistant MM1.R cell lines. The effect of stimulation with interleukin 6 (IL6) or insulin-like growth factor 1 (IGF1) on the intracellular incorporation of [{sup 125}I]ITdU was investigated in cytokine-sensitive MM1.S and MM1.R cell lines. Apoptotic cells were identified using Annexin V. Cleavage of caspase 3 and PARP was visualized by Western blot. DNA fragmentation was investigated using laddering assay. Therapeutic efficiency of [{sup 125}I]ITdU was proven by clonogenic assay. Results: [{sup 125}I]ITdU was shown to be efficiently incorporated into DNA of malignant cells, providing a promising mechanism for delivering highly toxic Auger radiation emitters into tumor DNA. [{sup 125}I]ITdU had a potent antimyeloma effect in cell lines representing distinct disease stages and, importantly, in cell lines sensitive or resistant to the conventional therapeutic agent, but was not toxic for normal plasma and bone marrow stromal cells. Furthermore, [{sup 125}I]ITdU abrogated the protective actions of IL6 and IGF1 on MM cells. [{sup 125}I]ITdU induced massive damage in the DNA of malignant plasma cells, which resulted in efficient inhibition of clonogenic growth. Conclusion: These studies may provide a

  6. Emittance studies of the BNL/SLAC/UCLA 1.6 cell photocathode rf gun

    International Nuclear Information System (INIS)

    Palmer, D.T.; Miller, R.H.; Wang, X.J.

    1997-01-01

    The symmetrized 1.6 cell S-band photocathode gun developed by the BNL/SLAC/UCLA collaboration is in operation at the Brookhaven Accelerator Test Facility (ATF). A novel emittance compensation solenoid magnet has also been designed, built and is in operation at the ATF. These two subsystems form an emittance compensated photoinjector used for beam dynamics, advanced acceleration and free electron laser experiments at the ATF. The highest acceleration field achieved on the copper cathode is 150 MV/m, and the guns normal operating field is 130 MV/m. The maximum rf pulse length is 3 micros. The transverse emittance of the photoelectron beam were measured for various injection parameters. The 1 nC emittance results are presented along with electron bunch length measurements that indicated that at above the 400 pC, space charge bunch lengthening is occurring. The thermal emittance, ε o , of the copper cathode has been measured

  7. Emittance growth in the DARHT Axis-II Downstream Transport

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Jr., Carl August [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schulze, Martin E. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-04-14

    Using a particle-in-cell (PIC) code, we investigated the possibilities for emittance growth through the quadrupole magnets of the system used to transport the high-current electron beam from an induction accelerator to the bremsstrahlung converter target used for flash radiography. We found that even highly mismatched beams exhibited little emittance growth (< 6%), which we attribute to softening of their initial hard edge current distributions. We also used this PIC code to evaluate the accuracy of emittance measurements using a solenoid focal scan following the quadrupole magnets. If the beam is round after the solenoids, the simulations indicate that the measurement is highly accurate, but it is substantially inaccurate for elliptical beams

  8. Measuring emittances and sigma matrices

    International Nuclear Information System (INIS)

    Rees, J.; Rivkin, L.

    1984-03-01

    The method used for measuring emittance at the SLAC Linac and the linear collider damping ring is described. The basis of the method is derived using one two-by-two matrix to specify the state of the input beam (sigma matrix) and another to describe the lens-drift transport system (R-matrix)

  9. Two-dimensional MoS2: A promising building block for biosensors.

    Science.gov (United States)

    Gan, Xiaorong; Zhao, Huimin; Quan, Xie

    2017-03-15

    Recently, two-dimensional (2D) layered nanomaterials have trigged intensive interest due to the intriguing physicochemical properties that stem from a quantum size effect connected with their ultra-thin structure. In particular, 2D molybdenum disulfide (MoS 2 ), as an emerging class of stable inorganic graphene analogs with intrinsic finite bandgap, would possibly complement or even surpass graphene in electronics and optoelectronics fields. In this review, we first discuss the historical development of ultrathin 2D nanomaterials. Then, we are concerned with 2D MoS 2 including its structure-property relationships, synthesis methods, characterization for the layer thickness, and biosensor applications over the past five years. Thereinto, we are highlighting recent advances in 2D MoS 2 -based biosensors, especially emphasize the preparation of sensing elements, roles of 2D MoS 2 , and assay strategies. Finally, on the basis of the current achievements on 2D MoS 2 and other ultrathin layered nanomaterials, perspectives on the challenges and opportunities for the exploration of 2D MoS 2 -based biosensors are put forward. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Synthesis of Monolayer MoS2 by Chemical Vapor Deposition

    Science.gov (United States)

    Withanage, Sajeevi; Lopez, Mike; Dumas, Kenneth; Jung, Yeonwoong; Khondaker, Saiful

    Finite and layer-tunable band gap of transition metal dichalcogenides (TMDs) including molybdenum disulfide (MoS2) are highlighted over the zero band gap graphene in various semiconductor applications. Weak interlayer Van der Waal bonding of bulk MoS2 allows to cleave few to single layer MoS2 using top-down methods such as mechanical and chemical exfoliation, however few micron size of these flakes limit MoS2 applications to fundamental research. Bottom-up approaches including the sulfurization of molybdenum (Mo) thin films and co-evaporation of Mo and sulfur precursors received the attention due to their potential to synthesize large area. We synthesized monolayer MoS2 on Si/SiO2 substrates by atmospheric pressure Chemical Vapor Deposition (CVD) methods using sulfur and molybdenum trioxide (MoO3) as precursors. Several growth conditions were tested including precursor amounts, growth temperature, growth time and flow rate. Raman, photoluminescence (PL) and atomic force microscopy (AFM) confirmed monolayer islands merging to create large area were observed with grain sizes up to 70 μm without using any seeds or seeding promoters. These studies provide in-depth knowledge to synthesize high quality large area MoS2 for prospective electronics applications.

  11. Doping effect on monolayer MoS2 for visible light dye degradation - A DFT study

    Science.gov (United States)

    Cheriyan, Silpa; Balamurgan, D.; Sriram, S.

    2018-04-01

    The electronic and optical properties of, Nitrogen (N), Cobalt (Co), and Co-N co-doped monolayers of MoS2 has been studied by using density functional theory (DFT) for visible light photocatalytic activity. From the calculations, it has been observed that the band gap of monolayer MoS2 has been reduced while doping. However, the band gaps of pristine and N doped MoS2 monolayers only falls in the visible region while for Co and Co-N co-doped systems, the band gap shifted to IR region. The optical calculation also confirms the results. The formation energy values of the doped system reaveal that MoS2 monolayer drops its stability while doping. To evaluate the photocatalytic response, band edge potentials of pristine and N-MoS2 are calculated, and the observed results show that compared to N-doped MoS2 monolayer, pure MoS2 is highly suitable for visible light photocatalytic dye degradation.

  12. Emittance growth and tune spectra at PETRA III

    International Nuclear Information System (INIS)

    Wanzenberg, R.

    2011-08-01

    At DESY the PETRA ring has been converted into a synchrotron radiation facility, called PETRA III. 20 damping wigglers have been installed to achieve an emittance of 1 nm. The commissioning with beam started in April 2009 and user runs have been started in 2010. The design current is 100 mA and the bunch to bunch distance is 8 ns for one particular filling pattern with 960 bunches. At a current of about 50 mA a strong vertical emittance increase has been observed. During machine studies it was found that the emittance increase depends strongly on the bunch filling pattern. For the user operation a filling scheme has been found which mitigates the increase of the vertical emittance. In August 2010 PETRA III has been operated without damping wigglers for one week. The vertical emittance growth was not significantly smaller without wigglers. Furthermore tune spectra at PETRA III show characteristic lines which have been observed at other storage rings in the connection with electron clouds. Measurements at PETRA III are presented for different bunch filling patterns and with and without wiggler magnets. (orig.)

  13. Exfoliated MoS2 nanosheets as efficient catalysts for electrochemical hydrogen evolution

    International Nuclear Information System (INIS)

    Ji, Shanshan; Yang, Zhe; Zhang, Chao; Liu, Zhenyan; Tjiu, Weng Weei; Phang, In Yee; Zhang, Zheng; Pan, Jisheng; Liu, Tianxi

    2013-01-01

    Graphical abstract: An efficient electrocatalyst for hydrogen evolution has been developed based on exfoliation of bulk MoS 2 crystals via a direct dispersion and ultrasonication method. Drop-casting method is used to fabricate the exfoliated MoS 2 nanosheets modified glass carbon electrode (E-MoS 2 /GCE) with various loadings. The E-MoS 2 /GCE with electrode loading of 48 μg cm −1 exhibits high catalytic activity for hydrogen evolution with a low overpotential (−0.12 V) and a high current density (1.26 mA cm −2 , at η = 150 mV). -- Highlights: • Two-dimensional MoS 2 nanosheets have been obtained by exfoliation of bulk MoS 2 crystals. • Exfoliated MoS 2 nanosheets show high electrocatalytic activity for H 2 production. • This study provides a new approach for renewable and economic H 2 production. -- Abstract: An efficient electrocatalyst for hydrogen evolution has been developed based on liquid exfoliation of bulk MoS 2 via a direct dispersion and ultrasonication method. Transmission electron microscopy and atomic force microscopy measurements show that the exfoliated MoS 2 consists of two-dimensional nanosheets. The exfoliated MoS 2 nanosheets modified glass carbon electrode (E-MoS 2 /GCE) with various loadings is fabricated via a drop-casting method. The electrocatalytic activity of E-MoS 2 /GCE toward hydrogen evolution reaction is examined using linear sweep voltammetry. It is shown that the E-MoS 2 /GCE with an electrode loading of 48 μg cm −2 exhibits a high catalytic activity for hydrogen evolution with a low overpotential (−0.12 V) and a high current density (1.26 mA cm −2 , at η = 150 mV)

  14. Adsorption of DNA/RNA nucleobases onto single-layer MoS2 and Li-Doped MoS2: A dispersion-corrected DFT study

    Science.gov (United States)

    Sadeghi, Meisam; Jahanshahi, Mohsen; Ghorbanzadeh, Morteza; Najafpour, Ghasem

    2018-03-01

    The kind of sensing platform in nano biosensor plays an important role in nucleic acid sequence detection. It has been demonstrated that graphene does not have an intrinsic band gap; therefore, transition metal dichalcogenides (TMDs) are desirable materials for electronic base detection. In the present work, a comparative study of the adsorption of the DNA/RNA nucleobases [Adenine (A), Cytosine (C) Guanine (G), Thymine (T) and Uracil (U)] onto the single-layer molybdenum disulfide (MoS2) and Li-doped MoS2 (Li-MoS2) as a sensing surfaces was investigated by using Dispersion-corrected Density Functional Theory (D-DFT) calculations and different measure of equilibrium distances, charge transfers and binding energies for the various nucleobases were calculated. The results revealed that the interactions between the nucleobases and the MoS2 can be strongly enhanced by introducing metal atom, due to significant charge transfer from the Li atom to the MoS2 when Lithium is placed on top of the MoS2. Furthermore, the binding energies of the five nucleobases were in the range of -0.734 to -0.816 eV for MoS2 and -1.47 to -1.80 eV for the Li-MoS2. Also, nucleobases were adsorbed onto MoS2 sheets via the van der Waals (vdW) force. This high affinity and the renewable properties of the biosensing platform demonstrated that Li-MoS2 nanosheet is biocompatible and suitable for nucleic acid analysis.

  15. Monte Carlo Transverse Emittance Study on Cs2Te

    CERN Document Server

    Banfi, F; Galimberti, P G; Giannetti, C; Pagliara, S; Parmigiani, F; Pedersoli, E

    2005-01-01

    A Monte Carlo study of electron transport in Cs2Te films is performed to investigate the transverse emittance epsilon at the cathode surface. We find the photoemitted electron angular distribution and explain the physical mechanism involved in the process, a mechanism hindered by the statistical nature of the Monte Carlo method. The effects of electron-phonon scattering are discussed. The transverse emittance is calculated for different radiation wavelengths and a laser spot size of 1.5*10(-3) m. For a laser radiation at 265 nm we find epsilon = 0.56 mm-mrad. The dependence of epsilon and the quantum yield on the electron affinity Ea is also investigated. The data shows the importance of aging/contamination on the material.

  16. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb; Rungger, Ivan; Sanvito, Stefano

    2013-01-01

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect

  17. Facile Fabrication of MoS2-Modified SnO2 Hybrid Nanocomposite for Ultrasensitive Humidity Sensing.

    Science.gov (United States)

    Zhang, Dongzhi; Sun, Yan'e; Li, Peng; Zhang, Yong

    2016-06-08

    An ultrasensitive humidity sensor based on molybdenum-disulfide- (MoS2)-modified tin oxide (SnO2) nanocomposite has been demonstrated in this work. The nanostructural, morphological, and compositional properties of an as-prepared MoS2/SnO2 nanocomposite were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectrometry (EDS), nitrogen sorption analysis, and Raman spectroscopy, which confirmed its successful preparation and rationality. The sensing characteristics of the MoS2/SnO2 hybrid film device against relative humidity (RH) were investigated at room temperature. The RH sensing results revealed an unprecedented response, ultrafast response/recovery behaviors, and outstanding repeatability. To our knowledge, the sensor response yielded in this work was tens of times higher than that of the existing humidity sensors. Moreover, the MoS2/SnO2 hybrid nanocomposite film sensor exhibited great enhancement in humidity sensing performances as compared to the pure MoS2, SnO2, and graphene counterparts. Furthermore, complex impedance spectroscopy and bode plots were employed to understand the underlying sensing mechanisms of the MoS2/SnO2 nanocomposite toward humidity. The synthesized MoS2/SnO2 hybrid composite was proved to be an excellent candidate for constructing ultrahigh-performance humidity sensor toward various applications.

  18. Multi-gated field emitters for a micro-column

    International Nuclear Information System (INIS)

    Mimura, Hidenori; Kioke, Akifumi; Aoki, Toru; Neo, Yoichiro; Yoshida, Tomoya; Nagao, Masayoshi

    2011-01-01

    We have developed a multi-gated field emitter (FE) such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

  19. Visible light responsive Cu2MoS4 nanosheets incorporated reduced graphene oxide for efficient degradation of organic pollutant

    Science.gov (United States)

    Rameshbabu, R.; Vinoth, R.; Navaneethan, M.; Harish, S.; Hayakawa, Y.; Neppolian, B.

    2017-10-01

    Visible light active copper molybdenum sulfide (Cu2MoS4) nanosheets were successfully anchored on reduced graphene oxide (rGO) using facile hydrothermal method. During the hydrothermal reaction, reduction of graphene oxide into rGO and the formation of Cu2MoS4 nanosheets were successfully obtained. The charge transfer interaction between the rGO sheets and Cu2MoS4 nanosheets extended the absorption to visible region in comparison with bare Cu2MoS4 nanosheets i.e without rGO sheets. Furthermore, the notable photoluminescence quenching observed for Cu2MoS4/rGO nanocomposite revealed the effective role of rGO towards the significant inhibition of electron-hole pair recombination. The photocatalytic efficiencies of bare Cu2MoS4 and Cu2MoS4/rGO nanocomposite was evaluated for the degradation of methyl orange dye under visible irradiation (λ > 420 nm). A maximum photodegradation efficiency of 99% was achieved for Cu2MoS4/rGO nanocomposite, while only 64% photodegradation was noted for bare Cu2MoS4. The enhanced optical absorption in visible region, high surface area, and low charge carrier recombination in the presence of rGO sheets were the main reasons for the enhancement in photodegardation of MO dye. In addition, the resultant Cu2MoS4/rGO nanocomposite was found to be reusable for five successive cycles without significant loss in its photocatalytic performance.

  20. Dosimetry of internal emitters - quo vadis?

    International Nuclear Information System (INIS)

    Reddy, A.R.; Nagaratnam, A.; Jain, S.C.; Gupta, M.M.; Mehta, S.C.

    1999-01-01

    The dosimetry of internally administered radiopharmaceuticals in nuclear medicine procedures using MIRD formalisms and dosimetry in the case of intakes of radionuclides and ICRP methodology for the purpose of radiological protection are well established working practices. It should, however, be remembered that dose or dose coefficients calculated refer to a reference individual, defined in terms of a mathematical phantom established on the basis of certain biokinetic reference parameters. The reference individual represents a typical caucasian adult of West Europe or North American origin. Recently, some attempts have been made to define a Reference Asian and a Reference Indian individual and to assess the effects of anatomical differences and changes in the biokinetics of radiopharmaceuticals and other radionuclides in these different reference individuals on the estimation of dose and dose coefficients in relation to the intake of internal radionuclides. The assessment of doses to the embryo/fetus due to intake of radionuclides by pregnant women, local dose estimates, microdosimetry, radiobiology and radiation protection aspects relating to Auger electron emitters represent other areas of active research in the area of dosimetry of internal emitters. The present review summarises these different aspects of work. (orig.) [de

  1. Source brightness and useful beam current of carbon nanotubes and other very small emitters

    International Nuclear Information System (INIS)

    Kruit, P.; Bezuijen, M.; Barth, J.E.

    2006-01-01

    The potential application of carbon nanotubes as electron sources in electron microscopes is analyzed. The resolution and probe current that can be obtained from a carbon nanotube emitter in a low-voltage scanning electron microscope are calculated and compared to the state of the art using Schottky electron sources. Many analytical equations for probe-size versus probe-current relations in different parameter regimes are obtained. It is shown that for most carbon nanotube emitters, the gun lens aberrations are larger than the emitters' virtual source size and thus restrict the microscope's performance. The result is that the advantages of the higher brightness of nanotube emitters are limited unless the angular emission current is increased over present day values or the gun lens aberrations are decreased. For some nanotubes with a closed cap, it is known that the emitted electron beam is coherent over the full emission cone. We argue that for such emitters the parameter ''brightness'' becomes meaningless. The influence of phase variations in the electron wave front emitted from such a nanotube emitter on the focusing of the electron beam is analyzed

  2. Phonon-limited mobility in n-type single-layer MoS2 from first principles

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.

    2012-01-01

    We study the phonon-limited mobility in intrinsic n-type single-layer MoS2 for temperatures T > 100 K. The materials properties including the electron-phonon interaction are calculated from first principles and the deformation potentials and Frohlich interaction in single-layer MoS2 are established...... to recent experimental findings for the mobility in single-layer MoS2 (similar to 200 cm(2)V(-1)s(-1)), our results indicate that mobilities close to the intrinsic phonon-limited mobility can be achieved in two-dimensional materials via dielectric engineering that effectively screens static Coulomb...

  3. Study on cell survival, induction of apoptosis and micronucleus formation in SCL-II and RTiV3 cells after exposure to the Auger electron emitter Tc-99m

    International Nuclear Information System (INIS)

    Kadenbach, K.; Kriehuber, R.; Weiss, D.G.

    2003-01-01

    Full text: Cell survival, induction of apoptosis and micronucleus (MN) formation have been investigated in the human squamous cell carcinoma cell line SCL-II and in the rat tracheal cell line RTiV3 after exposure to the Auger electron emitter Tc-99m. Cells were either acutely gamma(Co-60)-irradiated (0.78 Gy/min) or exposed to Tc-99m-Pertechnetate (25-300 MBq/20ml) for 24 h under cell culture conditions and assayed for cell survival (Colony-forming assay), micronucleus formation (Cytochalasin B assay) and the frequency of apoptotic cells (Fluorescence microscopy). Analytical dosimetrical models have been applied to derive the absorbed dose corresponding to the accumulated decays of Tc-99m. Absorbed doses up to 1.3 Gy could be achieved after Tc-99m exposure leading to no significant cell killing in this dose range except at one dose point (0.25 Gy) in SCL-II cells. MN formation was consistently lower when compared to Co-60 irradiated cells and showed a linear dose-response. The apoptotic response in SCL-II cells after Tc-99m exposure was described best by a 3rd order polynomial and increased apoptosis induction could be observed at much lower doses (0.25 Gy) in comparison to the reference radiation (0.8 Gy). The relative biological effectiveness (RBE) has been determined for MN formation and apoptosis induction and was found to be in the range of 0.1- 1.3 for both investigated biological endpoints, depending on which mathematical model for describing the dose-effect curve was used. Up-take experiments revealed an activity concentration ratio cells vs. medium of 1.2 after 16 h up to 24 h of exposure. No increased biological effectiveness of Tc-99m applied as Sodium-Pertechnetate could be observed in the investigated cell lines in comparison to gamma-irradiation. Induction of apoptosis is slightly increased after Tc-99m exposure in SCL-II cells and it has to be further evaluated, if this is due to the emitted Auger-component. A passive up-take mechanism of Tc-99m is

  4. Hydrogen and Methane Response of Pd Gate MOS Sensor

    Directory of Open Access Journals (Sweden)

    Preeti Pandey

    2009-04-01

    Full Text Available A sensor based on Pd/SiO2/Si MOS capacitor was fabricated on p type (1-6 ΩCm Si with thermal oxide layer of thickness about 33Ǻ. Sensor properties of the MOS structure were studied towards hydrogen (500- 3500 ppm in air and methane gas (1000-2500 ppm in air at room temperature and 140˚C respectively. The response of the sensor was measured as shift in C-V curve of the MOS structure. The sensitivity of the sensor towards the hydrogen (73 % at 0.03 V bias was better than methane (19.1 % at 0.68 V bias. SEM (Scanning electron microscopy and AFM image of the metal film show the porous structure which believed to be facilitating the catalytic oxidation of the insulator surface and higher gas response. High sensitivity of the sensor can be attributed to the change of interface state density on exposure of gases along with the formation of dipole layer.

  5. Sources of Emittance in RF Photocathode Injectors

    Energy Technology Data Exchange (ETDEWEB)

    Dowell, David [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2016-12-11

    Advances in electron beam technology have been central to creating the current generation of x-ray free electron lasers and ultra-fast electron microscopes. These once exotic devices have become essential tools for basic research and applied science. One important beam technology for both is the electron source which, for many of these instruments, is the photocathode RF gun. The invention of the photocathode gun and the concepts of emittance compensation and beam matching in the presence of space charge and RF forces have made these high-quality beams possible. Achieving even brighter beams requires a taking a finer resolution view of the electron dynamics near the cathode during photoemission and the initial acceleration of the beam. In addition, the high brightness beam is more sensitive to degradation by the optical aberrations of the gun’s RF and magnetic lenses. This paper discusses these topics including the beam properties due to fundamental photoemission physics, space charge effects close to the cathode, and optical distortions introduced by the RF and solenoid fields. Analytic relations for these phenomena are derived and compared with numerical simulations.

  6. Application of MOS structures to gamma dosimetry

    International Nuclear Information System (INIS)

    Frank, H.

    1978-01-01

    Lattice disorders induced in SiO 2 layers by irradiation are described, and the possibility of using MOS transistors for gamma dosimetry is discussed. Furthermore, experimental results are given for Czechoslovakian MOS transistors of MH 2009 type after gamma irradiation. Reference measurements with other irradiation sources have shown that the transistors respond only to those types of radiation which induce space charges in the oxide layer. They are, therefore, insensitive to neutrons and thus in contrast to dosimetric silicon diodes. Circuitry, sensitivity, and fading of MOS transistors are given, and a physical functional model is compared with the experimental results. (author)

  7. Metallization and superconductivity in Ca-intercalated bilayer MoS2

    Science.gov (United States)

    Szczȱśniak, R.; Durajski, A. P.; Jarosik, M. W.

    2017-12-01

    A two-dimensional molybdenum disulfide (MoS2) has attracted significant interest recently due to its outstanding physical, chemical and optoelectronic properties. In this paper, using the first-principles calculations, the dynamical stability, electronic structure and superconducting properties of Ca-intercalated bilayer MoS2 are investigated. The calculated electron-phonon coupling constant implies that the stable form of investigated system is a strong-coupling superconductor (λ = 1.05) with a low value of critical temperature (TC = 13.3 K). Moreover, results obtained within the framework of the isotropic Migdal-Eliashberg formalism proved that Ca-intercalated bilayer MoS2 exhibits behavior that goes beyond the scope of the conventional BCS theory.

  8. Emittance control and RF bunch compression in the NSRRC photoinjector

    International Nuclear Information System (INIS)

    Lau, W.K.; Hung, S.B.; Lee, A.P.; Chou, C.S.; Huang, N.Y.

    2011-01-01

    The high-brightness photoinjector being constructed at the National Synchrotron Radiation Research Center is for testing new accelerator and light-source concepts. It is the so-called split photoinjector configuration in which a short solenoid magnet is used for emittance compensation. The UV-drive laser pulses are also shaped to produce uniform cylindrical bunches for further reduction of beam emittance. However, limited by the available power from our microwave power system, the nominal accelerating gradient in the S-band booster linac is set at 18 MV/m. A simulation study with PARMELA shows that the linac operating at this gradient fails to freeze the electron beam emittance at low value. A background solenoid magnetic field is applied for beam emittance control in the linac during acceleration. A satisfactory result that meets our preliminary goal has been achieved with the solenoid magnetic field strength at 0.1 T. RF bunch compression as a means to achieve the required beam brightness for high-gain free-electron laser experiments is also examined. The reduction of bunch length to a few hundred femtoseconds can be obtained.

  9. A New Design Strategy for Efficient Thermally Activated Delayed Fluorescence Organic Emitters: From Twisted to Planar Structures

    KAUST Repository

    Chen, Xiankai; Tsuchiya, Youichi; Ishikawa, Yuma; Zhong, Cheng; Adachi, Chihaya; Bredas, Jean-Luc

    2017-01-01

    In the traditional molecular design of thermally activated delayed fluorescence (TADF) emitters composed of electron-donor and electron-acceptor moieties, achieving a small singlet-triplet energy gap (ΔEST ) in strongly twisted structures usually

  10. Doping of two-dimensional MoS2 by high energy ion implantation

    Science.gov (United States)

    Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

    2017-12-01

    Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

  11. Chemisorption-induced n-doping of MoS2 by oxygen

    International Nuclear Information System (INIS)

    Qi, Long; Wang, Ying; Wu, Yihong; Shen, Lei

    2016-01-01

    Both chemisorption and physisorption affect the electronic properties of two-dimensional materials, such as MoS 2 , but it remains a challenge to probe their respective roles experimentally. Through repeated in-situ electrical measurements of few-layer MoS 2 field-effect transistors in an ultrahigh vacuum system with well-controlled oxygen partial pressure (6 × 10 −8 mbar–3 × 10 −7 mbar), we were able to study the effect of chemisorption on surface defects separately from physically adsorbed oxygen molecules. It is found that chemisorption of oxygen results in n-doping in the channel but negligible effect on mobility and on/off ratio of the MoS 2 transistors. These results are in disagreement with the previous reports on p-doping and degradation of the device's performance when both chemisorption and physisorption are present. Through the analysis of adsorption-desorption kinetics and the first-principles calculations of electronic properties, we show that the experimentally observed n-doping effect originates from dissociative adsorption of oxygen at the surface defects of MoS 2 , which lowers the conduction band edge locally and makes the MoS 2 channel more n-type-like as compared to the as-fabricated devices

  12. Preparation of nanostructured and nanosheets of MoS2 oxide using oxidation method.

    Science.gov (United States)

    Amini, Majed; Ramazani S A, Ahmad; Faghihi, Morteza; Fattahpour, Seyyedfaridoddin

    2017-11-01

    Molybdenum disulfide (MoS 2 ), a two-dimensional transition metal has a 2D layered structure and has recently attracted attention due to its novel catalytic properties. In this study, MoS 2 has been successfully intercalated using chemical and physical intercalation techniques, while enhancing its surface properties. The final intercalated MoS 2 is of many interests because of its low-dimensional and potential properties in in-situ catalysis. In this research, we report different methods to intercalate the layers of MoS 2 successfully using acid-treatment, ultrasonication, oxidation and thermal shocking. The other goal of this study is to form SO bonds mainly because of expected enhanced in-situ catalytic operations. The intercalated MoS 2 is further characterized using analyses such as Fourier Transform Infrared Spectroscopy (FTIR), Raman, Contact Angle, X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive X-Ray Microanalysis (EDAX), Transmission electron microscopy (TEM), and BET. Copyright © 2017. Published by Elsevier B.V.

  13. Attapulgite-CeO2/MoS2 ternary nanocomposite for photocatalytic oxidative desulfurization

    Science.gov (United States)

    Li, Xiazhang; Zhang, Zuosong; Yao, Chao; Lu, Xiaowang; Zhao, Xiaobing; Ni, Chaoying

    2016-02-01

    Novel attapulgite(ATP)-CeO2/MoS2 ternary nanocomposites were synthesized by microwave assisted assembly method. The structures of the nanocomposites were characterized by XRD, FT-IR, UV-vis, XPS and in situ TEM. The photocatalytic activities of ATP-CeO2/MoS2 composites were investigated by degradating dibenzothiophene (DBT) in gasoline under visible light irradiation. The effect of the mass ratio of CeO2 to MoS2 on photocatalytic activity was investigated. The results indicate that the three-dimensional network structure is firmly constructed by ATP skeleton, CeO2 particles and MoS2 nanosheet which effectively increase the surface area of the composites and promote the separation of electrons and holes by resulting electronic transmission channels of multi-channel in space. The degradation rate of DBT can reach 95% under 3 h irradiation when the mass ratio of CeO2/MoS2 is 4/10. A plausible mechanism for the photocatalytic oxidative desulfurization of this nanocomposite is put forward.

  14. Alpha particle emitters in medicine

    International Nuclear Information System (INIS)

    Fisher, D.R.

    1989-09-01

    Radiation-induced cancer of bone, liver and lung has been a prominent harmful side-effect of medical applications of alpha emitters. In recent years, however, the potential use of antibodies labeled with alpha emitting radionuclides against cancer has seemed promising because alpha particles are highly effective in cell killing. High dose rates at high LET, effectiveness under hypoxic conditions, and minimal expectancy of repair are additional advantages of alpha emitters over antibodies labeled with beta emitting radionuclides for cancer therapy. Cyclotron-produced astatine-211 ( 211 At) and natural bismuth-212 ( 212 Bi) have been proposed and are under extensive study in the United States and Europe. Radium-223 ( 223 Ra) also has favorable properties as a potential alpha emitting label, including a short-lived daughter chain with four alpha emissions. The radiation dosimetry of internal alpha emitters is complex due to nonuniformly distributed sources, short particle tracks, and high relative specific ionization. The variations in dose at the cellular level may be extreme. Alpha-particle radiation dosimetry, therefore, must involve analysis of statistical energy deposition probabilities for cellular level targets. It must also account fully for nonuniform distributions of sources in tissues, source-target geometries, and particle-track physics. 18 refs., 4 figs

  15. Achievement of ultralow emittance coupling in the Australian Synchrotron storage ring

    Directory of Open Access Journals (Sweden)

    R. Dowd

    2011-01-01

    Full Text Available Investigations into producing an electron beam with ultralow vertical emittance have been conducted using the Australian Synchrotron 3 GeV storage ring. A method of tuning the emittance coupling (ϵ_{y}/ϵ_{x} has been developed using a machine model calibrated through the linear optics from closed orbits method. Direct measurements of the beam emittance have not been possible due to diagnostic limitations, however two independent indirect measurements both indicate a vertical emittance of 1.2–1.3 pm rad (ϵ_{y}/ϵ_{x}=0.01%. Other indirect measurements support the validity of these results. This result is the smallest vertical emittance currently achieved in a storage ring.

  16. International Standardization of Pure Beta Emitters

    International Nuclear Information System (INIS)

    Los Arcos, Jose Maria; Rodriguez, Leonor

    2006-01-01

    The paper describes the traditional methods of standardization of Pure Beta Emitters, their principal characteristics, advantage and drawbacks. It does comparisons between two metrological LSC methods: Triple to double coincidence ratio (TDCR) method and the CIEMAT/NIST method and presents the result obtained with several Key Comparisons serving as practical test of both methods. Both of them represent the siferrit of methods of standardization of pure (and mixed decay) radionuclides. ESIR WG of CCRI(II) is to implement a reference exchange system for the permanent equivalence of β, α and electron capture nuclides, similar to traditional SIR gamma. ESIR project is currently testing a new XAN scintillator and operational tests of the whole system at BIPM are expected by the end of 2006 (test restricted to ESIR NMI members)

  17. Energy dependence of pMOS dosemeters

    International Nuclear Information System (INIS)

    Savic, Z.; Stankovic, S.; Kovacevic, M.; Petrovic, M.

    1996-01-01

    The results are presented of experimental work and numerical simulations of the energy response for pMOS dosimetric transistors in their custom packages. Specially produced radiation soft pMOS transistors were used in this experimental work. The irradiation of pMOS dosemeters was done using 60 Co and 137 Cs sources, a dosimetric X ray unit, and a radiotherapeutic linear accelerator in the range of photon energies from 21 keV to 8 MeV. The results show that package geometry and materials can significantly affect and smooth the energy dependence of pMOS transistors and that in custom transistor packages they are not tissue-equivalent dosemeters. Their response in the photon energy range of 45 to 250 keV is significantly larger than it should be (maximum dose enhancement factor can be as high as 8) and some energy compensation techniques must be used in order to fulfill the requirements of corresponding standards. (Author)

  18. Electronic technology

    International Nuclear Information System (INIS)

    Kim, Jin Su

    2010-07-01

    This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

  19. Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

    Science.gov (United States)

    Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

    2015-03-12

    Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

  20. Integrated amplifying circuit with MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Baylac, B; Merckel, G; Meunier, P

    1974-01-25

    The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

  1. Compact Rare Earth Emitter Hollow Cathode

    Science.gov (United States)

    Watkins, Ronald; Goebel, Dan; Hofer, Richard

    2010-01-01

    A compact, high-current, hollow cathode utilizing a lanthanum hexaboride (LaB6) thermionic electron emitter has been developed for use with high-power Hall thrusters and ion thrusters. LaB6 cathodes are being investigated due to their long life, high current capabilities, and less stringent xenon purity and handling requirements compared to conventional barium oxide (BaO) dispenser cathodes. The new cathode features a much smaller diameter than previously developed versions that permit it to be mounted on axis of a Hall thruster ( internally mounted ), as opposed to the conventional side-mount position external to the outer magnetic circuit ("externally mounted"). The cathode has also been reconfigured to be capable of surviving vibrational loads during launch and is designed to solve the significant heater and materials compatibility problems associated with the use of this emitter material. This has been accomplished in a compact design with the capability of high-emission current (10 to 60 A). The compact, high-current design has a keeper diameter that allows the cathode to be mounted on the centerline of a 6- kW Hall thruster, inside the iron core of the inner electromagnetic coil. Although designed for electric propulsion thrusters in spacecraft station- keeping, orbit transfer, and interplanetary applications, the LaB6 cathodes are applicable to the plasma processing industry in applications such as optical coatings and semiconductor processing where reactive gases are used. Where current electrical propulsion thrusters with BaO emitters have limited life and need extremely clean propellant feed systems at a significant cost, these LaB6 cathodes can run on the crudest-grade xenon propellant available without impact. Moreover, in a laboratory environment, LaB6 cathodes reduce testing costs because they do not require extended conditioning periods under hard vacuum. Alternative rare earth emitters, such as cerium hexaboride (CeB6) can be used in this

  2. Investigations on the transverse phase space at a photo injector for minimized emittance

    Energy Technology Data Exchange (ETDEWEB)

    Miltchev, V.

    2006-08-15

    Radio frequency photoinjectors are electron sources able to generate beams of extremely high brightness, which are applicable to linac driven Free Electron Lasers (FEL). Because of the high phase space density, the dynamics of the electron beam is dominated by space charge interactions between the particles. This thesis studies the transverse phase space of space charge dominated electron beams produced by the Photo Injector Test Facility in Zeuthen (PITZ). The operation conditions for minimizing the transverse emittance are studied experimentally, theoretically and in simulations. The influence of the longitudinal profile of the driving UV laser pulse on the transverse emittance is investigated. Emphasis is placed on the experimental study of the emittance as a function of different machine parameters like the laser beam spot size, the amplitude of the focusing magnetic field, the rf phase and the electron bunch charge. First investigations on the thermal emittance for Cs{sub 2}Te photocathodes under rf operating conditions are presented. Measurements of the thermal emittance scaling with the photocathode laser spot size are analyzed. The significance of the applied rf field in the emittance formation process is discussed. (orig.)

  3. Investigations on the transverse phase space at a photo injector for minimized emittance

    International Nuclear Information System (INIS)

    Miltchev, V.

    2006-08-01

    Radio frequency photoinjectors are electron sources able to generate beams of extremely high brightness, which are applicable to linac driven Free Electron Lasers (FEL). Because of the high phase space density, the dynamics of the electron beam is dominated by space charge interactions between the particles. This thesis studies the transverse phase space of space charge dominated electron beams produced by the Photo Injector Test Facility in Zeuthen (PITZ). The operation conditions for minimizing the transverse emittance are studied experimentally, theoretically and in simulations. The influence of the longitudinal profile of the driving UV laser pulse on the transverse emittance is investigated. Emphasis is placed on the experimental study of the emittance as a function of different machine parameters like the laser beam spot size, the amplitude of the focusing magnetic field, the rf phase and the electron bunch charge. First investigations on the thermal emittance for Cs 2 Te photocathodes under rf operating conditions are presented. Measurements of the thermal emittance scaling with the photocathode laser spot size are analyzed. The significance of the applied rf field in the emittance formation process is discussed. (orig.)

  4. Preservation of low slice emittance in bunch compressors

    Directory of Open Access Journals (Sweden)

    S. Bettoni

    2016-03-01

    Full Text Available Minimizing the dilution of the electron beam emittance is crucial for the performance of accelerators, in particular for free electron laser facilities, where the length of the machine and the efficiency of the lasing process depend on it. Measurements performed at the SwissFEL Injector Test Facility revealed an increase in slice emittance after compressing the bunch even for moderate compression factors. The phenomenon was experimentally studied by characterizing the dependence of the effect on beam and machine parameters relevant for the bunch compression. The reproduction of these measurements in simulation required the use of a 3D beam dynamics model along the bunch compressor that includes coherent synchrotron radiation. Our investigations identified transverse effects, such as coherent synchrotron radiation and transverse space charge as the sources of the observed emittance dilution, excluding other effects, such as chromatic effects on single slices or spurious dispersion. We also present studies, both experimental and simulation based, on the effect of the optics mismatch of the slices on the variation of the slice emittance along the bunch. After a corresponding reoptimization of the beam optics in the test facility we reached slice emittances below 200 nm for the central slices along the longitudinal dimension with a moderate increase up to 300 nm in the head and tail for a compression factor of 7.5 and a bunch charge of 200 pC, equivalent to a final current of 150 A, at about 230 MeV energy.

  5. Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

    Science.gov (United States)

    Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu

    2018-03-01

    Few-layer molybdenum disulfide (MoS2) has attracted a great deal of attention as a semiconductor material for electronic and optoelectronic devices. However, the presence of localized states inside the bandgap is a critical issue that must be addressed to improve the applicability of MoS2 technology. In this work, we investigated the density of states (DOS: g(E)) inside the bandgap of MoS2 FET by using a current-voltage (I-V) analysis technique with the aid of high vacuum annealing (HVA). The g(E) can be obtained by combining the trap density and surface potential (ψ S) extracted from a consistent subthreshold current (I D-sub). The electrical performance of MoS2 FETs is strongly dependent on the inherent defects, which are closely related to the g(E) in the MoS2 active layer. By applying the proposed technique to the MoS2 FETs, we were able to successfully characterize the g(E) after stabilization of the traps by the HVA, which reduces the hysteresis distorting the intrinsic g(E). Also, the change of sulfur ions in MoS2 film before and after the HVA treatment is investigated directly by Auger electron spectroscopy analysis. The proposed technique provides a new methodology for active channel engineering of 2D channel based FETs such as MoS2, MoTe2, WSe2, and WS2.

  6. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  7. Increase of intrinsic emittance induced by multiphoton photoemission from copper cathodes illuminated by femtosecond laser pulses

    Science.gov (United States)

    An, Chenjie; Zhu, Rui; Xu, Jun; Liu, Yaqi; Hu, Xiaopeng; Zhang, Jiasen; Yu, Dapeng

    2018-05-01

    Electron sources driven by femtosecond laser have important applications in many aspects, and the research about the intrinsic emittance is becoming more and more crucial. The intrinsic emittance of polycrystalline copper cathode, which was illuminated by femtosecond pulses (FWHM of the pulse duration was about 100 fs) with photon energies above and below the work function, was measured with an extremely low bunch charge (single-electron pulses) based on free expansion method. A minimum emittance was obtained at the photon energy very close to the effective work function of the cathode. When the photon energy decreased below the effective work function, emittance increased rather than decreased or flattened out to a constant. By investigating the dependence of photocurrent density on the incident laser intensity, we found the emission excited by pulsed photons with sub-work-function energies contained two-photon photoemission. In addition, the portion of two-photon photoemission current increased with the reduction of photon energy. We attributed the increase of emittance to the effect of two-photon photoemission. This work shows that conventional method of reducing the photon energy of excited light source to approach the room temperature limit of the intrinsic emittance may be infeasible for femtosecond laser. There would be an optimized photon energy value near the work function to obtain the lowest emittance for pulsed laser pumped photocathode.

  8. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

    KAUST Repository

    He, Xin; Li, Hai; Zhu, Zhiyong; Dai, Zhenyu; Yang, Yang; Yang, Peng; Zhang, Qiang; Li, Peng; Schwingenschlö gl, Udo; Zhang, Xixiang

    2016-01-01

    Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

  9. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

    KAUST Repository

    He, Xin

    2016-10-27

    Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

  10. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  11. Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

    Science.gov (United States)

    Cui, Xu

    MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

  12. Role of interlayer coupling in ultra thin MoS2

    KAUST Repository

    Cheng, Yingchun

    2012-01-01

    The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer coupling. This explains the anomalous thickness dependence of the lattice vibrations observed by Lee et al. (ACS Nano, 2010, 4, 2695). The absence of interlayer coupling in mono-layer MoS 2 induces a transition from direct to indirect band gap behaviour. Our results demonstrate a strong interplay between the intralayer chemical bonding and the interlayer van-der-Waals interaction. This journal is © 2012 The Royal Society of Chemistry.

  13. Scanning tunneling spectroscopy of MoS2 monolayer in presence of ethanol gas

    Science.gov (United States)

    Hosseini, Seyed Ali; Iraji zad, Azam; Berahman, Masoud; Aghakhani Mahyari, Farzaneh; Shokouh, Seyed Hossein Hosseini

    2018-04-01

    Due to high surface to volume ratio and tunable band gap, two dimensional (2D) layered materials such as MoS2, is good candidate for gas sensing applications. This research mainly focuses on variation of Density of States (DOS) of MoS2 monolayes caused by ethanol adsorption. The nanosheets are synthesized by liquid exfoliation, and then using Scanning Tunneling Spectroscopy (STS) and Density Functional Theory (DFT), local electronic characteristic such as DOS and band gap in non-vacuum condition are analyzed. The results show that ethanol adsorption enhances DOS and deform orbitals near the valence and conduction bands that increase transport of carriers on the sheet.

  14. Emittance control in linear colliders

    International Nuclear Information System (INIS)

    Ruth, R.D.

    1991-01-01

    Before completing a realistic design of a next-generation linear collider, the authors must first learn the lessons taught by the first generation, the SLC. Given that, they must make designs fault tolerant by including correction and compensation in the basic design. They must also try to eliminate these faults by improved alignment and stability of components. When these two efforts cross, they have a realistic design. The techniques of generation and control of emittance reviewed here provide a foundation for a design which can obtain the necessary luminosity in a next-generation linear collider

  15. Emittance Growth in the NLCTA First Chicane

    International Nuclear Information System (INIS)

    Sun, Yipeng

    2011-01-01

    In this paper, the emittance growth in the NLCTA (Next Linear Collider Test Accelerator) first chicane region is evaluated by simulation studies. It is demonstrated that the higher order fields of the chicane dipole magnet and the dipole corrector magnet (which is attached on the quadrupoles) are the main contributions for the emittance growth, especially for the case with a large initial emittance (γε 0 = 5 (micro)m for instance). These simulation results agree with the experimental observations.

  16. Production of alpha emitters for therapy

    International Nuclear Information System (INIS)

    Vucina, J.; Orlic, M.; Lukic, D.

    2006-01-01

    The basis for the introduction of alpha emitters into nuclear medical practice are their radiobiological properties. High LET values and short ranges in biological tissues are advantageous in comparison with nowadays most often used beta emitters, primarily 90 Y and 131 I. Given are the most important criteria for the introduction of a given radionuclide in the routine use. Shown are the procedures for the production of the most important alpha emitters 211 At, 212 Bi and 213 Bi. (author)

  17. Emittance measurements by variable quadrupole method

    International Nuclear Information System (INIS)

    Toprek, D.

    2005-01-01

    The beam emittance is a measure of both the beam size and beam divergence, we cannot directly measure its value. If the beam size is measured at different locations or under different focusing conditions such that different parts of the phase space ellipse will be probed by the beam size monitor, the beam emittance can be determined. An emittance measurement can be performed by different methods. Here we will consider the varying quadrupole setting method.

  18. MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity.

    Science.gov (United States)

    Yang, Jaehyun; Kwak, Hyena; Lee, Youngbin; Kang, Yu-Seon; Cho, Mann-Ho; Cho, Jeong Ho; Kim, Yong-Hoon; Jeong, Seong-Jun; Park, Seongjun; Lee, Hoo-Jeong; Kim, Hyoungsub

    2016-04-06

    We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

  19. Friction and wear mechanisms in MoS2/Sb2O3/Au nanocomposite coatings

    International Nuclear Information System (INIS)

    Scharf, T.W.; Kotula, P.G.; Prasad, S.V.

    2010-01-01

    Fundamental phenomena governing the tribological mechanisms in sputter deposited amorphous MoS 2 /Sb 2 O 3 /Au nanocomposite coatings are reported. In dry environments the nanocomposite has the same low friction coefficient as pure MoS 2 (∼0.007). However, unlike pure MoS 2 coatings, which wear through in air (50% relative humidity), the composite coatings showed minimal wear, with wear factors of ∼1.2-1.4 x 10 -7 mm 3 Nm -1 in both dry nitrogen and air. The coatings exhibited non-Amontonian friction behavior, with the friction coefficient decreasing with increasing Hertzian contact stress. Cross-sectional transmission electron microscopy of wear surfaces revealed that frictional contact resulted in an amorphous to crystalline transformation in MoS 2 with 2H-basal (0 0 0 2) planes aligned parallel to the direction of sliding. In air the wear surface and subsurface regions exhibited islands of Au. The mating transfer films were also comprised of (0 0 0 2)-oriented basal planes of MoS 2 , resulting in predominantly self-mated 'basal on basal' interfacial sliding and, thus, low friction and wear.

  20. Preparation and tribological properties of MoS2/graphene oxide composites

    Science.gov (United States)

    Song, Haojie; Wang, Biao; Zhou, Qiang; Xiao, Jiaxuan; Jia, Xiaohua

    2017-10-01

    A hydrothermal route is developed for the synthesis of MoS2/graphene oxide (GO) composites based on the hydrothermal reduction of Na2MoO4 and GO sheets with L-cysteine. The MoS2/GO composites in improving friction and wear of the sunshine oil on sliding steel surfaces under low or high applied load were demonstrated. In tests with sliding steel surfaces, the sunshine oil that contains small amounts of MoS2/GO composites exhibited the lowest specific friction coefficient and wear rate under all of the sliding conditions. Scanning electron microscopy and energy dispersive spectrometer performed to analyze the wear scar surfaces after friction confirmed that the outstanding lubrication performance of MoS2/GO composites could be attributed to their good dispersion stability and extremely thin laminated structure, which allow the MoS2/GO composites to easily enter the contact area, thereby preventing the rough surfaces from coming into direct contact.

  1. Probing the biocompatibility of MoS2 nanosheets by cytotoxicity assay and electrical impedance spectroscopy

    Science.gov (United States)

    Shah, Pratikkumar; Narayanan, Tharangattu N.; Li, Chen-Zhong; Alwarappan, Subbiah

    2015-08-01

    Transition metal dichalgogenides such as MoS2 have recently emerged as hot two-dimensional (2D) materials due to their superior electronic and catalytic properties. Recently, we have reported the usefulness of MoS2 nanosheets toward the electrochemical detection of neurotransmitters and glucose (Narayanan et al 2014 Nanotechnology 25 335702). Furthermore, there are reports available in the literature that demonstrate the usefulness of MoS2 nanosheets for biosensing and energy storage applications (Zhu et al 2013 J. Am. Chem. Soc. 135 5998-6001 Pumera and Loo 2014 Trends Anal. Chem. 61 49-53 Lee et al 2014 Sci. Rep. 4 7352; Stephenson et al 2014 Energy Environ. Sci. 7 209-31). Understanding the cytotoxic effect of any material is very important prior to employing them for any in vivo biological applications such as implantable sensors, chips, or carriers for drug delivery and cell imaging purposes. Herein, we report the cytotoxicity of the MoS2 nanosheets based on the cytotoxic assay results and electrical impedance analysis using rat pheochromocytoma cells (PC12) and rat adrenal medulla endothelial cells (RAMEC). Our results indicated that the MoS2 nanosheets synthesized in our work are safe 2D nanosheets for futuristic biomedical applications.

  2. Micro-dressing of a carbon nanotube array with MoS2 gauze

    Science.gov (United States)

    Lim, Sharon Xiaodai; Woo, Kah Whye; Ng, Junju; Lu, Junpeng; Kwang, Siu Yi; Zhang, Zheng; Tok, Eng Soon; Sow, Chorng-Haur

    2015-10-01

    Few-layer MoS2 film has been successfully assembled over an array of CNTs. Using different focused laser beams with different wavelengths, site selective patterning of either the MoS2 film or the supporting CNT array is achieved. This paves the way for applications and investigations into the fundamental properties of the hybrid MoS2/CNT material with a controlled architecture. Through Raman mapping, straining and electron doping of the MoS2 film as a result of interaction with the supporting CNT array are detected. The role of the MoS2 film was further emphasized with a lower work function being detected from Ultra-violet Photoelectron Spectrsocopy (UPS) measurements of the hybrid material, compared to the CNT array. The effect of the changes in the work function was illustrated through the optoelectronic behavior of the hybrid material. At 0 V, 3.49 nA of current is measured upon illuminating the sample with a broad laser beam emitting laser light with a wavelength of 532 nm. With a strong response to external irradiation of different wavelengths, and changes to the power of the excitation source, the hybrid material has shown potential for applications in optoelectronic devices.

  3. Achievement of ultra-low emittance beam in the ATF damping ring

    CERN Document Server

    Honda, Y; Araki, S; Bane, Karl Leopold Freitag; Brachmann, A; Frisch, J; Fukuda, M; Hasegawa, K; Hayano, H; Hendrickson, L; Higashi, Y; Higo, T; Hirano, K; Hirose, T; Iida, K; Imai, T; Inoue, Y; Karataev, P; Kubo, K; Kurihara, Y; Kuriki, M; Kuroda, R; Kuroda, S; Luo, X; Matsuda, M; McCormick, D; Muto, T; Nakajima, K; Nelson, J; Nomura, M; Ohashi, A; Okugi, T; Omori, T; Ross, M; Sakai, H; Sakai, I; Sasao, N; Smith, S; Suzuki, T; Takano, M; Takashi, N; Taniguchi, T; Terunuma, N; Toge, N; Turner, J; Urakawa, J; Vogel, V; Wolski, A; Woodley, M; Yamazaki, I; Yamazaki, Y; Yocky, J; Young, A; Zimmermann, Frank

    2003-01-01

    We report on the smallest vertical emittance achieved in single-bunch-mode operation of the ATF. The emittances were measured with a laser-wire beam-profile monitor installed in the damping ring. The bunch length and the momentum spread of the beam were also recorded under the same conditions. The smallest vertical rms emittance measured is 4 pm in the limit of zero current. It increases by a factor of 1.5 for a bunch intensity of 10^10 electrons. There are no discrepancies between the measured data and the calculations of intra-beam scattering.

  4. The Brookhaven ATF low-emittance beam line

    International Nuclear Information System (INIS)

    Wang, X.J.; Kirk, H.G.

    1991-01-01

    One component of the experimental program at the Brookhaven Accelerator Test Facility (ATF) consists of a class of experiments which will study the acceleration of electrons through micron-size structures which are exposed in coincidence to a 100 GW CO 2 laser beam. These experiments require the development and control of an electron beam with geometric emittances on the order of 10 -10 m-rad and intensities on the order of 10 6 electrons. In this paper, the authors describe the strategies for producing such beams and the effects of higher-order aberrations. Particle tracking results are presented for the final-focus system

  5. The Brookhaven ATF low-emittance beam line

    International Nuclear Information System (INIS)

    Wang, X.J.

    1991-01-01

    One component of the experimental program at the Brookhaven Accelerator Test Facility (ATF) consists of a class of experiments which will study the acceleration of electrons through micron-size structures which are exposed in coincidence to a 100 GW CO 2 laser beam. These experiments require the development and control of an electron beam with geometric emittances on the order of 10 -10 m-rad and intensities on the order of 10 6 electrons. In this paper, we describe the strategies for producing such beams and the effects of high-order aberrations. Particle tracking results are presented for the final-focus system. 9 refs., 6 figs., 2 tabs

  6. Neutron detector with own power supply, with an emitter made of gadolinium foil and two concentric collectors

    International Nuclear Information System (INIS)

    Brixy, H.; Spillekothen, H.G.; Benninghofen, G.; Serafin, N.

    1985-01-01

    The emitter consists of a material with a high absorption crossection for thermal neutrons, particularly gadolinium, and is provided with an auxiliary emitter layer on the inside and/or the outside. This increases the electron yield with suitable dimensions and material. (orig./HP) [de

  7. Edge structures and properties of triangular antidots in single-layer MoS2

    KAUST Repository

    Gan, Li Yong; Cheng, Yingchun; Schwingenschlö gl, Udo; Yao, Yingbang; Zhao, Yong; Zhang, Xixiang; Huang, Wei

    2016-01-01

    Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

  8. Edge structures and properties of triangular antidots in single-layer MoS2

    KAUST Repository

    Gan, Li Yong

    2016-08-30

    Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

  9. Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

    International Nuclear Information System (INIS)

    Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.

    2006-01-01

    A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ g ) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission

  10. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    Directory of Open Access Journals (Sweden)

    Young Ki Hong

    2016-05-01

    Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  11. The Interface between Gd and Monolayer MoS2: A First-Principles Study

    KAUST Repository

    Zhang, Xuejing

    2014-12-08

    We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS2 upwards into the conduction band. At the surface and interface the Gd f states shift to lower energy and new surface/interface Gd d states appear at the Fermi energy, which are strongly hybridized with the Mo 4d states and thus lead to a high spin-polarization (ferromagnetically ordered Mo magnetic moments of 0.15 μB). Gd therefore is an interesting candidate for spin injection into monolayer MoS2.

  12. Edge structures and properties of triangular antidots in single-layer MoS2

    International Nuclear Information System (INIS)

    Gan, Li-Yong; Cheng, Yingchun; Huang, Wei; Schwingenschlögl, Udo; Yao, Yingbang; Zhao, Yong; Zhang, Xi-xiang

    2016-01-01

    Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS 2 . The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS 2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS 2 devices.

  13. Minimum emittance in TBA and MBA lattices

    Science.gov (United States)

    Xu, Gang; Peng, Yue-Mei

    2015-03-01

    For reaching a small emittance in a modern light source, triple bend achromats (TBA), theoretical minimum emittance (TME) and even multiple bend achromats (MBA) have been considered. This paper derived the necessary condition for achieving minimum emittance in TBA and MBA theoretically, where the bending angle of inner dipoles has a factor of 31/3 bigger than that of the outer dipoles. Here, we also calculated the conditions attaining the minimum emittance of TBA related to phase advance in some special cases with a pure mathematics method. These results may give some directions on lattice design.

  14. Minimum emittance in TBA and MBA lattices

    International Nuclear Information System (INIS)

    Xu Gang; Peng Yuemei

    2015-01-01

    For reaching a small emittance in a modern light source, triple bend achromats (TBA), theoretical minimum emittance (TME) and even multiple bend achromats (MBA) have been considered. This paper derived the necessary condition for achieving minimum emittance in TBA and MBA theoretically, where the bending angle of inner dipoles has a factor of 3 1/3 bigger than that of the outer dipoles. Here, we also calculated the conditions attaining the minimum emittance of TBA related to phase advance in some special cases with a pure mathematics method. These results may give some directions on lattice design. (authors)

  15. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  16. Mechanically delaminated few layered MoS2 nanosheets based high performance wire type solid-state symmetric supercapacitors

    Science.gov (United States)

    Krishnamoorthy, Karthikeyan; Pazhamalai, Parthiban; Veerasubramani, Ganesh Kumar; Kim, Sang Jae

    2016-07-01

    Two dimensional nanostructures are increasingly used as electrode materials in flexible supercapacitors for portable electronic applications. Herein, we demonstrated a ball milling approach for achieving few layered molybdenum disulfide (MoS2) via exfoliation from their bulk. Physico-chemical characterizations such as X-ray diffraction, field emission scanning electron microscope, and laser Raman analyses confirmed the occurrence of exfoliated MoS2 sheets with few layers from their bulk via ball milling process. MoS2 based wire type solid state supercapacitors (WSCs) are fabricated and examined using cyclic voltammetry (CV), electrochemical impedance spectroscopy, and galvanostatic charge discharge (CD) measurements. The presence of rectangular shaped CV curves and symmetric triangular shaped CD profiles suggested the mechanism of charge storage in MoS2 WSC is due to the formation of electrochemical double layer capacitance. The MoS2 WSC device delivered a specific capacitance of 119 μF cm-1, and energy density of 8.1 nW h cm-1 with better capacitance retention of about 89.36% over 2500 cycles, which ensures the use of the ball milled MoS2 for electrochemical energy storage devices.

  17. The origin of the enhanced performance of nitrogen-doped MoS_2 in lithium ion batteries

    International Nuclear Information System (INIS)

    Liu, Qiuhong; Weijun, Xia; Wu, Zhenjun; Huo, Jia; Liu, Dongdong; Wang, Shuangyin; Wang, Qiang

    2016-01-01

    MoS_2 with a similar layered structure to graphene has been widely applied in various areas including lithium ion batteries. However, low conductivity, capacity fading and poor rate performance are still the main challenges for MoS_2 anode materials. In this work, for the first time, we prepared nitrogen-doped MoS_2 (N-MoS_2) nanosheets through a simple two-step method involving the preparation of MoS_2 with defects by the hydrothermal method, followed by sintering in a NH_3 atmosphere. Our electrochemical characterizations and density functional theory calculations demonstrated that nitrogen doping could enhance the electron conductivity and showed higher specific capacity than pristine MoS_2 as anode materials of lithium ion batteries, which can be attributed to the faster transportation of electrons and ions because of nitrogen doping. This work helps us understand the origin of the enhanced performance of N-doped MoS_2 in lithium ion batteries. (paper)

  18. Fabrication of a temperature-responsive and recyclable MoS2 nanocatalyst through composting with poly (N-isopropylacrylamide)

    Science.gov (United States)

    Liu, Yan; Chen, Pengpeng; Nie, Wangyan; Zhou, Yifeng

    2018-04-01

    A temperature-responsive, recyclable nanocatalyst was fabricated by composting the exfoliated molybdenum disulfide (MoS2) nanosheets with poly (N-isopropylacry lamide) (PNIPAM). The structure and morphology of MoS2/PNIPAM nanocatalyst was fully characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), Thermogravimetry analysis (TGA), Scanning electron microscope (SEM) and Transmission electron microscopy (TEM). The temperature-responsive properties of the MoS2/PNIPAM nanocatalyst were confirmed by Dynamic Light Scattering (DLS) and Ultraviolet-visible ((UV-vis)) absorption spectroscopy. The catalytic activities of the MoS2/PNIPAM nanocatalyst were studied using the reduction reaction of 4-nitrophenol (4-NP) to 4-aminophenol (4-AP) as the model reaction. Results showed that the catalytic activity of the MoS2/PNIPAM nanocatalyst could be regulated by temperature. Furthermore, when the temperature went higher than the low critical solution temperature (LCST) of PNIPAM, the MoS2/PNIPAM nanocatalyst tended to aggregated to form bulk materials from homogeneous suspension.

  19. Room-temperature deposition of diamond-like carbon field emitter on flexible substrates

    International Nuclear Information System (INIS)

    Chen, H.; Iliev, M.N.; Liu, J.R.; Ma, K.B.; Chu, W.-K.; Badi, N.; Bensaoula, A.; Svedberg, E.B.

    2006-01-01

    Room-temperature fabrication of diamond-like carbon electron field emitters on flexible polyimide substrate is reported. These thin film field emitters are made using an Ar gas cluster ion beam assisted C 6 vapor deposition method. The bond structure of the as-deposited diamond-like carbon film was studied using Raman spectroscopy. The field emission characteristics of the deposited films were also measured. Electron current densities over 15 mA/cm 2 have been recorded under an electrical field of about 65 V/μm. These diamond-like carbon field emitters are easy and inexpensive to fabricate. The results are promising for flexible field-emission fabrication without the need of complex patterning and tip shaping as compared to the Spindt-type field emitters

  20. Normal spectral emittance of Inconel 718 aeronautical alloy coated with yttria stabilized zirconia films

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Fernandez, L. [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Industria de Turbo Propulsores, S.A., Planta de Zamudio, Edificio 300, 48170 Zamudio, Bizkaia (Spain); Campo, L. del [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Perez-Saez, R.B., E-mail: raul.perez@ehu.es [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Tello, M.J. [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Emittance of Inconel 718 coated with plasma sprayed yttria stabilized zirconia. Black-Right-Pointing-Pointer The coating is opaque for {lambda} > 9 {mu}m and semi-transparent for {lambda} < 9 {mu}m. Black-Right-Pointing-Pointer In the semi-transparent region the emittance decreases with coating thickness. Black-Right-Pointing-Pointer 300 {mu}m thick coatings are still semi-transparent. Black-Right-Pointing-Pointer In the opaque region the surface roughness determines the emittance level. - Abstract: Knowledge of the radiative behaviour of the yttria stabilized zirconia (YSZ) thermal barrier coatings (TBCs) is needed to perform radiative heat transfer calculations in industrial applications. In this paper, normal spectral emittance experimental data of atmospheric plasma sprayed (PS) YSZ films layered on Inconel 718 substrates are shown. The spectral emittance was measured between 2.5 and 22 {mu}m on samples with film thicknesses ranging from 20 to 280 {mu}m. The samples were heated in a controlled environment, and the emittance was measured for several temperatures between 330 and 730 Degree-Sign C. The dependence of the spectral emittance with film thickness, surface roughness and temperature has been studied and compared with the available results for YSZ TBCs obtained by electron-beam physical vapour deposition. The PS-TBC samples show a Christiansen point at {lambda} = 12.8 {mu}m. The films are semi-transparent for {lambda} < 9 {mu}m, and opaque for {lambda} > 9 {mu}m. In the semi-transparent region, the contribution of the radiation emitted by the Inconel 718 substrate to the global emittance of the samples is analysed. In addition, the influence of the roughness in the emittance values in the opaque spectral region is discussed. Finally, the total normal emittance is obtained as a function of the TBC thickness.

  1. Low Emittance Gun Project based on Field Emission

    CERN Document Server

    Ganter, Romain; Dehler, M; Gobrecht, Jens; Gough, Chris; Ingold, Gerhard; Leemann, Simon C; Shing-Bruce-Li, Kevin; Paraliev, Martin; Pedrozzi, Marco; Raguin, Jean Yves; Rivkin, Leonid; Schlott, Volker; Sehr, Harald; Streun, Andreas; Wrulich, Albin F; Zelenika, Sasa

    2004-01-01

    The design of an electron gun capable of producing beam emittance one order of magnitude lower than current technology would reduce considerably the cost and size of a free electron laser emitting at 0.1nm. Field emitter arrays (FEAs) including a gate and a focusing layer are an attractive technology for such high brightness sources. Electrons are extracted from micrometric tips thanks to voltage pulses between gate and tips. The focusing layer should then reduce the initial divergence of each emitted beamlets. This FEA will be inserted in a high gradient diode configuration coupled with a radiofrequency structure. In the diode part very high electric field pulses (several hundreds of MV/m) will limit the degradation of emittance due to space charge effect. This first acceleration will be obtained with high voltage pulses (typically a megavolt in a few hundred of nanoseconds) synchronized with the low voltage pulses applied to the FEA (typically one hundred of volts in one nanosecond at frequency below kilohe...

  2. Emittance control in linear colliders

    International Nuclear Information System (INIS)

    Ruth, R.D.

    1991-05-01

    In this paper, we discuss the generation and control of the emittance in a next-generation linear collider. The beams are extracted from a damping ring and compressed in length by the first bunch compressor. They are then accelerated in a preaccelerator linac up to an energy appropriate for injection into a high gradient linac. In many designs this pre-acceleration is followed by another bunch compression to reach a short bunch. After acceleration in the linac, the bunches are finally focused transversely to a small spot. The proposed vertical beam sizes at the interaction point are the order of a few nanometers while the horizontal sizes are about a factor of 100 larger. This cross-sectional area is about a factor of 10 4 smaller than the SLC. However, the main question is: what are the tolerances to achieve such a small size, and how do they compare to present techniques for alignment and stability? These tolerances are very design dependent. Alignment tolerances in the linac can vary from 1 μm to 100 μm depending upon the basic approach. In this paper we discuss techniques of emittance generation and control which move alignment tolerances to the 100 μm range

  3. On the importance of nonlocal effects on the description of emitter-plasmon coupling

    DEFF Research Database (Denmark)

    Tserkezis, Christos; Wubs, Martijn; Mortensen, N. Asger

    2017-01-01

    Plasmonic nanostructures present several characteristics that make them ideal templates for the modification and control of the emission properties of quantum emitters such as organic molecules, fluorescent dyes and quantum dots. State-of-the-art plasmonic architectures strongly enhance and confine...... dimensions, allowing the design of ultranarrow plasmonic cavities and the precise positioning of emitters inside them. In these situations, however, a description beyond classical electrodynamics is rendered unavoidable, as nonclassical effects such as electron spill-out, tunnelling, and nonlocal screening...

  4. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  5. 2D nanosheet molybdenum disulphide (MoS2) modified electrodes explored towards the hydrogen evolution reaction

    Science.gov (United States)

    Rowley-Neale, Samuel J.; Brownson, Dale A. C.; Smith, Graham C.; Sawtell, David A. G.; Kelly, Peter J.; Banks, Craig E.

    2015-10-01

    We explore the use of two-dimensional (2D) MoS2 nanosheets as an electrocatalyst for the Hydrogen Evolution Reaction (HER). Using four commonly employed commercially available carbon based electrode support materials, namely edge plane pyrolytic graphite (EPPG), glassy carbon (GC), boron-doped diamond (BDD) and screen-printed graphite electrodes (SPE), we critically evaluate the reported electrocatalytic performance of unmodified and MoS2 modified electrodes towards the HER. Surprisingly, current literature focuses almost exclusively on the use of GC as an underlying support electrode upon which HER materials are immobilised. 2D MoS2 nanosheet modified electrodes are found to exhibit a coverage dependant electrocatalytic effect towards the HER. Modification of the supporting electrode surface with an optimal mass of 2D MoS2 nanosheets results in a lowering of the HER onset potential by ca. 0.33, 0.57, 0.29 and 0.31 V at EPPG, GC, SPE and BDD electrodes compared to their unmodified counterparts respectively. The lowering of the HER onset potential is associated with each supporting electrode's individual electron transfer kinetics/properties and is thus distinct. The effect of MoS2 coverage is also explored. We reveal that its ability to catalyse the HER is dependent on the mass deposited until a critical mass of 2D MoS2 nanosheets is achieved, after which its electrocatalytic benefits and/or surface stability curtail. The active surface site density and turn over frequency for the 2D MoS2 nanosheets is determined, characterised and found to be dependent on both the coverage of 2D MoS2 nanosheets and the underlying/supporting substrate. This work is essential for those designing, fabricating and consequently electrochemically testing 2D nanosheet materials for the HER.We explore the use of two-dimensional (2D) MoS2 nanosheets as an electrocatalyst for the Hydrogen Evolution Reaction (HER). Using four commonly employed commercially available carbon based electrode

  6. Hafnium carbide nanocrystal chains for field emitters

    International Nuclear Information System (INIS)

    Tian, Song; Li, Hejun; Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang

    2014-01-01

    A hafnium carbide (HfC) nanostructure, i.e., HfC nanocrystal chain, was synthesized by a chemical vapor deposition (CVD) method. X-ray diffractometer, field-emission scanning electron microscope, transmission electron microscope, and energy-dispersive X-ray spectrometer were employed to characterize the product. The synthesized one-dimensional (1D) nanostructures with many faceted octahedral nanocrystals possess diameters of tens of nanometers to 500 nm and lengths of a few microns. The chain-like structures possess a single crystalline structure and preferential growth direction along the [1 0 0] crystal orientation. The growth of the chains occurred through the vapor–liquid–solid process along with a negative-feedback mechanism. The field emission (FE) properties of the HfC nanocrystal chains as the cold cathode emitters were examined. The HfC nanocrystal chains display good FE properties with a low turn-on field of about 3.9 V μm −1 and a high field enhancement factor of 2157, implying potential applications in vacuum microelectronics.

  7. MOSFET and MOS capacitor responses to ionizing radiation

    Science.gov (United States)

    Benedetto, J. M.; Boesch, H. E., Jr.

    1984-01-01

    The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

  8. Coupling single emitters to quantum plasmonic circuits

    DEFF Research Database (Denmark)

    Huck, Alexander; Andersen, Ulrik Lund

    2016-01-01

    In recent years, the controlled coupling of single-photon emitters to propagating surface plasmons has been intensely studied, which is fueled by the prospect of a giant photonic nonlinearity on a nanoscaled platform. In this article, we will review the recent progress on coupling single emitters...

  9. Parametric Conversion Using Custom MOS Varactors

    Directory of Open Access Journals (Sweden)

    Iniewski Krzysztof (Kris

    2006-01-01

    Full Text Available The possible role of customized MOS varactors in amplification, mixing, and frequency control of future millimeter wave CMOS RFICs is outlined. First, the parametric conversion concept is revisited and discussed in terms of modern RF communications systems. Second, the modeling, design, and optimization of MOS varactors are reconsidered in the context of their central role in parametric circuits. Third, a balanced varactor structure is proposed for robust oscillator frequency control in the presence of large extrinsic noise expected in tightly integrated wireless communicators. Main points include the proposal of a subharmonic pumping scheme based on the MOS varactor, a nonequilibrium elastance-voltage model, optimal varactor layout suggestions, custom m-CMOS varactor design and measurement, device-level balanced varactor simulations, and parametric circuit evaluation based on measured device characteristics.

  10. Radiation hardening of MOS devices by boron

    International Nuclear Information System (INIS)

    Danchenko, V.

    1975-01-01

    A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

  11. Positron emitter labeled enzyme inhibitors

    International Nuclear Information System (INIS)

    Fowler, J.S.; MacGregor, R.R.; Wolf, A.P.; Langstrom, B.

    1990-01-01

    This invention involves a new strategy for imagining and mapping enzyme activity in the living human and animal body using positron emitter-labeled suicide enzyme inactivators or inhibitors which become covalently bound to the enzyme as a result of enzymatic catalysis. Two such suicide inactivators for monoamine oxidase have been labeled with carbon-11 and used to map the enzyme subtypes in the living human and animal body using PET. By using positron emission tomography to image the distribution of radioactivity produced by the body penetrating radiation emitted by carbon-11, a map of functionally active monoamine oxidase activity is obtained. Clorgyline and L-deprenyl are suicide enzyme inhibitors and irreversibly inhibit monoamine oxidase. When these inhibitors are labeled with carbon-11 they provide selective probes for monoamine oxidase localization and reactivity in vivo using positron emission tomography

  12. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

    Science.gov (United States)

    Deen, M. Jamal; Pascal, Fabien

    2003-05-01

    For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

  13. Emittance compensation with dynamically optimized photoelectron beam profiles

    Energy Technology Data Exchange (ETDEWEB)

    Rosenzweig, J.B. [Department of Physics and Astronomy, UCLA, 405 Hilgard Avenue, Los Angeles, CA 90095 (United States)]. E-mail: rosen@physics.ucla.edu; Cook, A.M. [Department of Physics and Astronomy, UCLA, 405 Hilgard Avenue, Los Angeles, CA 90095 (United States); England, R.J. [Department of Physics and Astronomy, UCLA, 405 Hilgard Avenue, Los Angeles, CA 90095 (United States); Dunning, M. [Department of Physics and Astronomy, UCLA, 405 Hilgard Avenue, Los Angeles, CA 90095 (United States); Anderson, S.G. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Ferrario, Massimo [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionale di Frascati, Via E. Fermi 41, Frascati, Rome (Italy)

    2006-02-01

    Much of the theory and experimentation concerning creation of a high-brightness electron beam from a photocathode, and then applying emittance compensation techniques, assumes that one must strive for a uniform density electron beam, having a cylindrical shape. On the other hand, this shape has large nonlinearities in the space-charge field profiles near the beam's longitudinal extrema. These nonlinearities are known to produce both transverse and longitudinal emittance growth. On the other hand, it has recently been shown by Luiten that by illuminating the cathode with an ultra-short laser pulse of appropriate transverse profile, a uniform density, ellipsoidally shaped bunch is dynamically formed, which then has linear space-charge fields in all dimensions inside of the bunch. We study here this process, and its marriage to the standard emittance compensation scenario that is implemented in most recent photoinjectors. It is seen that the two processes are compatible, with simulations indicating a very high brightness beam can be obtained. The robustness of this scheme to systematic errors is examined. Prospects for experimental tests of this scheme are discussed.

  14. Emittance compensation with dynamically optimized photoelectron beam profiles

    International Nuclear Information System (INIS)

    Rosenzweig, J.B.; Cook, A.M.; England, R.J.; Dunning, M.; Anderson, S.G.; Ferrario, Massimo

    2006-01-01

    Much of the theory and experimentation concerning creation of a high-brightness electron beam from a photocathode, and then applying emittance compensation techniques, assumes that one must strive for a uniform density electron beam, having a cylindrical shape. On the other hand, this shape has large nonlinearities in the space-charge field profiles near the beam's longitudinal extrema. These nonlinearities are known to produce both transverse and longitudinal emittance growth. On the other hand, it has recently been shown by Luiten that by illuminating the cathode with an ultra-short laser pulse of appropriate transverse profile, a uniform density, ellipsoidally shaped bunch is dynamically formed, which then has linear space-charge fields in all dimensions inside of the bunch. We study here this process, and its marriage to the standard emittance compensation scenario that is implemented in most recent photoinjectors. It is seen that the two processes are compatible, with simulations indicating a very high brightness beam can be obtained. The robustness of this scheme to systematic errors is examined. Prospects for experimental tests of this scheme are discussed

  15. Effects of emittance and space-charge in femtosecond bunch compression

    International Nuclear Information System (INIS)

    Kan, K.; Yang, J.; Kondoh, T.; Norizawa, K.; Yoshida, Y.

    2008-01-01

    Ultrashort electron bunches of the order of <100fs are essential for the study of ultrafast reactions and phenomena by means of time-resolved pump-probe experiments. In order to generate such an electron bunch, the effects of emittance, space-charge (SC) and coherent synchrotron radiation (CSR) on the bunch length in a femtosecond magnetic bunch compressor were studied theoretically. It was observed that the bunch length is dominated by the emittance, SC and CSR effects when the electron bunch is compressed into a femtosecond electron bunch. The increases in bunch length due to the transverse emittance, SC and CSR effects in the bunch compressor were 1.7 fs/mm mrad, 107 fs/nC and 72 fs/nC, respectively. Finally, the simulated bunch length was compared with the experimental results.

  16. Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    International Nuclear Information System (INIS)

    Renteria, J.; Jiang, C.; Samnakay, R.; Rumyantsev, S. L.; Goli, P.; Balandin, A. A.; Shur, M. S.

    2014-01-01

    We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS 2 field-effect transistors revealing the relative contributions of the MoS 2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS 2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS 2 transistors, are 2 × 10 19  eV −1 cm −3 and 2.5 × 10 20  eV −1 cm −3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS 2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS 2 and other van der Waals materials

  17. Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    Science.gov (United States)

    Renteria, J.; Samnakay, R.; Rumyantsev, S. L.; Jiang, C.; Goli, P.; Shur, M. S.; Balandin, A. A.

    2014-04-01

    We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 2 × 1019 eV-1cm-3 and 2.5 × 1020 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

  18. Dual functional MoS2/graphene interlayer as an efficient polysulfide barrier for advanced lithium-sulfur batteries

    International Nuclear Information System (INIS)

    Guo, Pengqian; Liu, Dequan; Liu, Zhengjiao; Shang, Xiaonan; Liu, Qiming; He, Deyan

    2017-01-01

    Highlights: •Dual functional MoS 2 /graphene interlayer was first used as an efficient polysulfide-trapping shield for lithium-sulfur batteries. •MoS 2 /graphene interlayer shows strong chemical interactions with LiPSs. •MoS 2 /graphene interlayer forms a 3D network to facilitate electron and ion transfer during the discharge-charge processes. •The resultant lithium-sulfur batteries exhibit a superior rate capacity and improved cycling capacity. -- Abstract: A dual functional interlayer consisted of composited two-dimensional MoS 2 and graphene has been developed as an efficient polysulfide barrier for lithium-sulfur batteries (LSBs). With such a configuration, LSBs show a superior rate capacity and improved cycling capacity. The excellent electrochemical performance can be attributed to the strong bonding interactions between the MoS 2 /graphene interlayer and the formed lithium polysulfides (LiPSs) as well as the good electrical conductivity of the MoS 2 /graphene composite. The MoS 2 /graphene interlayer can physically block LiPSs by the graphene nanosheets and chemically suppress the dissolution of LiPSs by the polar MoS 2 nanoflowers. Such a dual functional interlayer further provides a good contact with the surface of the sulfur cathode, acts as an upper current collector and greatly improves the sulfur utilization and the rate capability of LSBs.

  19. The effect of dimethyl sulfoxide on the induction of DNA strand breaks in plasmid DNA and colony formation of PC Cl3 mammalian cells by alpha-, beta-, and Auger electron emitters (223)Ra, (188)Re, and (99m)Tc.

    Science.gov (United States)

    Runge, Roswitha; Oehme, Liane; Kotzerke, Jörg; Freudenberg, Robert

    2016-12-01

    DNA damage occurs as a consequence of both direct and indirect effects of ionizing radiation. The severity of DNA damage depends on the physical characteristics of the radiation quality, e.g., the linear energy transfer (LET). There are still contrary findings regarding direct or indirect interactions of high-LET emitters with DNA. Our aim is to determine DNA damage and the effect on cellular survival induced by (223)Ra compared to (188)Re and (99m)Tc modulated by the radical scavenger dimethyl sulfoxide (DMSO). Radioactive solutions of (223)Ra, (188)Re, or (99m)Tc were added to either plasmid DNA or to PC Cl3 cells in the absence or presence of DMSO. Following irradiation, single strand breaks (SSB) and double strand breaks (DSB) in plasmid DNA were analyzed by gel electrophoresis. To determine the radiosensitivity of the rat thyroid cell line (PC Cl3), survival curves were performed using the colony formation assay. Exposure to 120 Gy of (223)Ra, (188)Re, or (99m)Tc leads to maximal yields of SSB (80 %) in plasmid DNA. Irradiation with 540 Gy (223)Ra and 500 Gy (188)Re or (99m)Tc induced 40, 28, and 64 % linear plasmid conformations, respectively. DMSO prevented the SSB and DSB in a similar way for all radionuclides. However, with the α-emitter (223)Ra, a low level of DSB could not be prevented by DMSO. Irradiation of PC Cl3 cells with (223)Ra, (188)Re, and (99m)Tc pre-incubated with DMSO revealed enhanced survival fractions (SF) in comparison to treatment without DMSO. Protection factors (PF) were calculated using the fitted survival curves. These factors are 1.23 ± 0.04, 1.20 ± 0.19, and 1.34 ± 0.05 for (223)Ra, (188)Re, and (99m)Tc, respectively. For (223)Ra, as well as for (188)Re and (99m)Tc, dose-dependent radiation effects were found applicable for plasmid DNA and PC Cl3 cells. The radioprotection by DMSO was in the same range for high- and low-LET emitter. Overall, the results indicate the contribution of mainly indirect radiation

  20. Controlling magnetism of MoS2 sheets by embedding transition-metal atoms and applying strain.

    Science.gov (United States)

    Zhou, Yungang; Su, Qiulei; Wang, Zhiguo; Deng, Huiqiu; Zu, Xiaotao

    2013-11-14

    Prompted by recent experimental achievement of transition metal (TM) atoms substituted in MoS2 nanostructures during growth or saturating existing vacancies (Sun et al., ACS Nano, 2013, 7, 3506; Deepak et al., J. Am. Chem. Soc., 2007, 129, 12549), we explored, via density functional theory, the magnetic properties of a series of 3d TM atoms substituted in a MoS2 sheet, and found that Mn, Fe, Co, Ni, Cu and Zn substitutions can induce magnetism in the MoS2 sheet. The localizing unpaired 3d electrons of TM atoms respond to the introduction of a magnetic moment. Depending on the species of TM atoms, the substituted MoS2 sheet can be a metal, semiconductor or half-metal. Remarkably, the applied elastic strain can be used to control the strength of the spin-splitting of TM-3d orbitals, leading to an effective manipulation of the magnetism of the TM-substituted MoS2 sheet. We found that the magnetic moment of the Mn- and Fe-substituted MoS2 sheets can monotonously increase with the increase of tensile strain, while the magnetic moment of Co-, Ni-, Cu- and Zn-substituted MoS2 sheets initially increases and then decreases with the increase of tensile strain. An instructive mechanism was proposed to qualitatively explain the variation of magnetism with elastic strain. The finding of the magnetoelastic effect here is technologically important for the fabrication of strain-driven spin devices on MoS2 nanostructures, which allows us to go beyond the current scope limited to the spin devices within graphene and BN-based nanostructures.

  1. Structure and tribological properties of MoS2 low friction thin films

    Directory of Open Access Journals (Sweden)

    Paradecka Agnieszka

    2017-01-01

    Full Text Available The main aim of the studies was the deposition of the AlCrN film, covered by molybdenum disulphide (MoS2 – based lubricant, on the austenitic steel substrate. The AlCrN and MoS2 layers were deposited by PVD lateral rotating ARC-cathodes (LARC and magnetron sputtering technology on the X6CrNiMoTi17-12-2 respectively. Structural characterizations of the MoS2 thin films have been carried out using SEM (scanning electron microscopy and AFM (atomic force microscopy to determine the surface topography as well as HRTEM (high-resolution transmission electron microscopy and Raman spectroscopy for structural investigations. The tribological wear relationships using ball-on-disc test were specified for surface layers, determining the friction co-efficient and mass loss of the investigated surfaces. Tests of the coatings’ adhesion to the substrate material were made using the scratch test. HRTEM investigation shows an amorphous character of the MoS2 layer. In sliding dry friction conditions, the friction co-efficient for the investigated elements is set in the range between 0.4-0.5. The investigated coating reveals high wear resistance. The coating demonstrated a dense cross-sectional morphology as well as good adhesion to the substrate. The good properties of the PVD AlCrN+MoS2 coatings make them suitable in various engineering and industrial applications.

  2. Optical properties and band structure of atomically thin MoS2

    Science.gov (United States)

    Shan, Jie; Mak, Kin Fai; Lee, Changgu; Hone, James; Heinz, Tony

    2010-03-01

    Atomically thin layers of materials can be expected to exhibit distinct electronic structure and novel properties compared to their bulk counterparts. Layered compounds, for which stable atomically thin samples can be produced, are ideal candidates for such studies. Graphene, a monolayer slice of the graphite crystal, is an illustrative example of both the stability and of the interest and importance of such materials. Here we report a study of thin layers of MoS2, a hexagonal layered bulk semiconductor with an indirect band gap of 1.3 eV. MoS2 samples with layer thickness N down to a monolayer were obtained by mechanical exfoliation. We observed an enhancement of the luminescence quantum yield by more than a factor of 100 in monolayer MoS2 compared to the bulk material. The combination of absorption, photoluminescence, and photoconductivity measurements indicates that a transition to a direct-gap material occurs in the limit of the single MoS2 layer. This result is supported by an earlier first-principles calculation [J. Phys. Chem. C 2007, 111, 16192]. Further, by varying the thickness of the samples, we were able to probe the evolution of the electronic structure for N = 1 -- 6 layers.

  3. Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

    Science.gov (United States)

    Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basset, Francesco Basso; Pezzoli, Fabio; Molle, Alessandro

    2016-04-29

    Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

  4. Emittance studies of the 2.45 GHz permanent magnet ECR ion source

    Science.gov (United States)

    Zelenak, A.; Bogomolov, S. L.; Yazvitsky, N. Yu.

    2004-05-01

    During the past several years different types of permanent magnet 2.45 GHz (electron cyclotron resonance) ion sources were developed for production of singly charged ions. Ion sources of this type are used in the first stage of DRIBs project, and are planned to be used in the MASHA mass separator. The emittance of the beam provided by the source is one of the important parameters for these applications. An emittance scanner composed from a set of parallel slits and rotary wire beam profile monitor was used for the studying of the beam emittance characteristics. The emittance of helium and argon ion beams was measured with different shapes of the plasma electrode for several ion source parameters: microwave power, source potential, plasma aperture-puller aperture gap distance, gas pressure. The results of measurements are compared with previous simulations of ion optics.

  5. Emittance studies of the 2.45 GHz permanent magnet ECR ion source

    International Nuclear Information System (INIS)

    Zelenak, A.; Bogomolov, S.L.; Yazvitsky, N.Yu.

    2004-01-01

    During the past several years different types of permanent magnet 2.45 GHz (electron cyclotron resonance) ion sources were developed for production of singly charged ions. Ion sources of this type are used in the first stage of DRIBs project, and are planned to be used in the MASHA mass separator. The emittance of the beam provided by the source is one of the important parameters for these applications. An emittance scanner composed from a set of parallel slits and rotary wire beam profile monitor was used for the studying of the beam emittance characteristics. The emittance of helium and argon ion beams was measured with different shapes of the plasma electrode for several ion source parameters: microwave power, source potential, plasma aperture-puller aperture gap distance, gas pressure. The results of measurements are compared with previous simulations of ion optics

  6. Demonstration of cathode emittance dominated high bunch charge beams in a DC gun-based photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Gulliford, Colwyn, E-mail: cg248@cornell.edu; Bartnik, Adam, E-mail: acb20@cornell.edu; Bazarov, Ivan; Dunham, Bruce; Cultrera, Luca [CLASSE, Cornell University, 161 Synchrotron Drive Ithaca, New York 14853-8001 (United States)

    2015-03-02

    We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (≥100 pC) beams produced in the DC gun-based Cornell energy recovery linac photoinjector. In particular, we show that the cathode thermal and core beam emittances dominate the final 95% and core emittances measured at 9–9.5 MeV. Additionally, we demonstrate excellent agreement between optimized 3D space charge simulations and measurement, and show that the quality of the transverse laser distribution limits the optimal simulated and measured emittances. These results, previously thought achievable only with RF guns, demonstrate that DC gun based photoinjectors are capable of delivering beams with sufficient single bunch charge and beam quality suitable for many current and next generation accelerator projects such as Energy Recovery Linacs and Free Electron Lasers.

  7. Time-Resolved Emittance Characterization of an Induction Linac Beam using Optical Transition Radiation

    International Nuclear Information System (INIS)

    Le Sage, G P

    2002-01-01

    An induction linac is used by Lawrence Livermore National Laboratory to perform radiographic testing at the Flash X-ray Radiography facility. Emittance characterization is important since x-ray spot size impacts the resolution of shadow-graphs. Due to the long pulse length, high current, and beam energy, emittance measurement using Optical Transition Radiation is an attractive alternative for reasons that will be described in the text. The utility of OTR-based emittance measurement has been well demonstrated for both RF and induction linacs. We describe the time-resolved emittance characterization of an induction linac electron beam. We have refined the optical collection system for the induction linac application, and have demonstrated a new technique for probing the divergence of a subset of the beam profile. The experimental apparatus, data reduction, and conclusions will be presented. Additionally, a new scheme for characterizing the correlation between beam divergence and spatial coordinates within the beam profile will be described

  8. Time-Resolved Emittance Characterization of an Induction Linac Beam using Optical Transition Radiation

    CERN Document Server

    Le Sage, G P

    2002-01-01

    An induction linac is used by Lawrence Livermore National Laboratory to perform radiographic testing at the Flash X-ray Radiography facility. Emittance characterization is important since x-ray spot size impacts the resolution of shadow-graphs. Due to the long pulse length, high current, and beam energy, emittance measurement using Optical Transition Radiation is an attractive alternative for reasons that will be described in the text. The utility of OTR-based emittance measurement has been well demonstrated for both RF and induction linacs. We describe the time-resolved emittance characterization of an induction linac electron beam. We have refined the optical collection system for the induction linac application, and have demonstrated a new technique for probing the divergence of a subset of the beam profile. The experimental apparatus, data reduction, and conclusions will be presented. Additionally, a new scheme for characterizing the correlation between beam divergence and spatial coordinates within the b...

  9. Structural transformation of MoO3 nanobelts into MoS2 nanotubes

    International Nuclear Information System (INIS)

    Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

    2009-01-01

    The structural transformation of MoO 3 nanobelts into MoS 2 nanotubes using a simple sulfur source has been reported. This transformation has been extensively investigated using electron microscopic and spectroscopic techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), and energy-dispersive X-ray analysis (SEM-EDAX and TEM-EDX). The method described in this report will serve as a generic route for the transformation of other oxide nanostructures into the chalcogenide nanostructures. (orig.)

  10. A New Design Strategy for Efficient Thermally Activated Delayed Fluorescence Organic Emitters: From Twisted to Planar Structures

    KAUST Repository

    Chen, Xiankai

    2017-10-17

    In the traditional molecular design of thermally activated delayed fluorescence (TADF) emitters composed of electron-donor and electron-acceptor moieties, achieving a small singlet-triplet energy gap (ΔEST ) in strongly twisted structures usually translates into a small fluorescence oscillator strength, which can significantly decrease the emission quantum yield and limit efficiency in organic light-emitting diode devices. Here, based on the results of quantum-chemical calculations on TADF emitters composed of carbazole donor and 2,4,6-triphenyl-1,3,5-triazine acceptor moieties, a new strategy is proposed for the molecular design of efficient TADF emitters that combine a small ΔEST with a large fluorescence oscillator strength. Since this strategy goes beyond the traditional framework of structurally twisted, charge-transfer type emitters, importantly, it opens the way for coplanar molecules to be efficient TADF emitters. Here, a new emitter, composed of azatriangulene and diphenyltriazine moieties, is theoretically designed, which is coplanar due to intramolecular H-bonding interactions. The synthesis of this hexamethylazatriangulene-triazine (HMAT-TRZ) emitter and its preliminary photophysical characterizations point to HMAT-TRZ as a potential efficient TADF emitter.

  11. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal

    2015-06-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Facile one-pot synthesis of CoS_2-MoS_2/CNTs as efficient electrocatalyst for hydrogen evolution reaction

    International Nuclear Information System (INIS)

    Liu, Yan-Ru; Hu, Wen-Hui; Li, Xiao; Dong, Bin; Shang, Xiao; Han, Guan-Qun; Chai, Yong-Ming; Liu, Yun-Qi; Liu, Chen-Guang

    2016-01-01

    Highlights: • Ternary hybrid CoS_2-MoS_2/CNTs electrocatalysts have been prepared. • CNTs as support may provide good conductivity and low the agglomeration of MoS_2. • CoS_2 with intrinsic metallic conductivity may enhance the activity for HER. • Ternary CoS_2-MoS_2/CNTs have the better activity and stability for HER. - Abstract: Ternary hybrid cobalt disulfide-molybdenum disulfides supported on carbon nanotubes (CoS_2-MoS_2/CNTs) electrocatalysts have been prepared via a simple hydrothermal method. CNTs as support may provide good conductivity and low the agglomeration of layered MoS_2 structure. CoS_2 with intrinsic metallic conductivity may enhance the activity of the ternary hybrid electrocatalysts for hydrogen evolution reaction (HER). X-ray diffraction (XRD) data confirm the formation of ternary hybrid nanocomposites composed of CNTs, CoS_2 and amorphous MoS_2. Scanning electron microscopy (SEM) images show that strong combination between MoS_2, CNTs and regular orthohexagonal CoS_2 has been obtained. The dispersion of each component is good and no obvious agglomeration can be observed. It is found that compared with CoS_2/CNTs and MoS_2/CNTs, the ternary CoS_2-MoS_2/CNTs have the better activity for HER with a low onset potential of 70 mV (vs. RHE) and a small Talel slope of 67 mV dec"−"1, and are extremely stable after 1000 cycles. In addition, the optimal doping ratio of Co to Mo is 2:1, which have better HER activity. It is proved that the introduction of carbon materials and Co atoms could improve the performances of MoS_2-based electrocatalysts for HER.

  13. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Fabrication of Z-scheme Ag3PO4/MoS2 composites with enhanced photocatalytic activity and stability for organic pollutant degradation

    International Nuclear Information System (INIS)

    Zhu, Chaosheng; Zhang, Lu; Jiang, Bo; Zheng, Jingtang; Hu, Ping; Li, Sujuan; Wu, Mingbo; Wu, Wenting

    2016-01-01

    Highlights: • Ag 3 PO 4 /MoS 2 composite photocatalysts were prepared by precipitation method. • The composites showed enhanced visible-light photocatalytic activity. • The photocorrosion of Ag 3 PO 4 was inhibited due to the introduction of MoS 2 . • Z-scheme mechanism was proposed to explain the enhanced photoactivity. - Abstract: In this study, highly efficient visible-light-driven Ag 3 PO 4 /MoS 2 composite photocatalysts with different weight ratios of MoS 2 were prepared via the ethanol-water mixed solvents precipitation method and characterized by ICP, XRD, HRTEM, FE-SEM, BET, XPS, UV–vis DRS and PL analysis. Under visible-light irradiation, Ag 3 PO 4 /MoS 2 composites exhibit excellent photocatalytic activity towards the degradation of organic pollutants in aqueous solution. The optimal composite with 0.648 wt% MoS 2 content exhibits the highest photocatalytic activity, which can degrade almost all MB under visible-light irradiation within 60 min. Recycling experiments confirmed that the Ag 3 PO 4 /MoS 2 catalysts had superior cycle performance and stability. The photocatalytic activity enhancement of Ag 3 PO 4 /MoS 2 photocatalysts can be mainly ascribed to the efficient separation of photogenerated charge carriers and the stronger oxidation and reduction ability through a Z-scheme system composed of Ag 3 PO 4 , Ag and MoS 2 , in which Ag particles act as the charge separation center. The high photocatalytic stability is due to the successful inhibition of the photocorrosion of Ag 3 PO 4 by transferring the photogenerated electrons of Ag 3 PO 4 to MoS 2 . The evidence of the Z-scheme photocatalytic mechanism of the composite photocatalysts could be obtained from the active species trapping experiments and the photoluminescence technique.

  15. Beam diagnostics using an emittance measurement device

    International Nuclear Information System (INIS)

    Sarstedt, M.; Becker, R.; Klein, H.; Maaser, A.; Mueller, J.; Thomae, R.; Weber, M.

    1995-01-01

    For beam diagnostics aside from Faraday cups for current measurements and analysing magnets for the determination of beam composition and energy the most important tool is an emittance measurement device. With such a system the distribution of the beam particles in phase-space can be determined. This yields information not only on the position of the particles but also on their angle with respect to the beam axis. There are different kinds of emittance measurement devices using either circular holes or slits for separation of part of the beam. The second method (slit-slit measurement), though important for the determination of the rms-emittance, has the disadvantage of integrating over the y- and y'-coordinate (measurement in xx'-plane assumed). This leads to different emittance diagrams than point-point measurements, since in xx'-plane for each two corresponding points of rr'-plane there exists a connecting line. With regard to beam aberrations this makes xx'-emittances harder to interpret. In this paper the two kinds of emittance diagrams are discussed. Additionally the influence of the slit height on the xx'-emittance is considered. The analytical results are compared to experimental measurements in rr'-, rx'- and xx'-phase-space. (orig.)

  16. First-principles study of van der Waals interactions in MoS2 and MoO3

    International Nuclear Information System (INIS)

    Peelaers, H; Van de Walle, C G

    2014-01-01

    Van der Waals interactions play an important role in layered materials such as MoS 2 and MoO 3 . Within density functional theory, several methods have been developed to explicitly include van der Waals interactions. We compare the performance of several of these functionals in describing the structural and electronic properties of MoS 2 and MoO 3 . We include functionals based on the local density or generalized gradient approximations, but also based on hybrid functionals. The coupling of the semiempirical Grimme D2 method with the hybrid functional HSE06 is shown to lead to a very good description of both structural and electronic properties. (paper)

  17. Analytical models for total dose ionization effects in MOS devices.

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Phillip Montgomery; Bogdan, Carolyn W.

    2008-08-01

    MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO{sub 2} interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

  18. Characterising large area silicon drift detectors with MOS injectors

    International Nuclear Information System (INIS)

    Bonvicini, V.; Rashevsky, A.; Vacchi, A.

    1999-01-01

    In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

  19. Energy dependence of pMOS dosemeters

    Energy Technology Data Exchange (ETDEWEB)

    Savic, Z. [Military Technical Institute, Belgrade (Yugoslavia); Stankovic, S.; Kovacevic, M.; Petrovic, M. [Institute of Nuclear Sciences, Belgrade (Yugoslavia). Radiation Protection Dept.

    1996-10-01

    The results are presented of experimental work and numerical simulations of the energy response for pMOS dosimetric transistors in their custom packages. Specially produced radiation soft pMOS transistors were used in this experimental work. The irradiation of pMOS dosemeters was done using {sup 60}Co and {sup 137}Cs sources, a dosimetric X ray unit, and a radiotherapeutic linear accelerator in the range of photon energies from 21 keV to 8 MeV. The results show that package geometry and materials can significantly affect and smooth the energy dependence of pMOS transistors and that in custom transistor packages they are not tissue-equivalent dosemeters. Their response in the photon energy range of 45 to 250 keV is significantly larger than it should be (maximum dose enhancement factor can be as high as 8) and some energy compensation techniques must be used in order to fulfill the requirements of corresponding standards. (Author).

  20. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui

    2015-07-16

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  1. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

    2015-01-01

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  2. Improved Rare-Earth Emitter Hollow Cathode

    Science.gov (United States)

    Goebel, Dan M.

    2011-01-01

    An improvement has been made to the design of the hollow cathode geometry that was created for the rare-earth electron emitter described in Compact Rare Earth Emitter Hollow Cathode (NPO-44923), NASA Tech Briefs, Vol. 34, No. 3 (March 2010), p. 52. The original interior assembly was made entirely of graphite in order to be compatible with the LaB6 material, which cannot be touched by metals during operation due to boron diffusion causing embrittlement issues in high-temperature refractory materials. Also, the graphite tube was difficult to machine and was subject to vibration-induced fracturing. This innovation replaces the graphite tube with one made out of refractory metal that is relatively easy to manufacture. The cathode support tube is made of molybdenum or molybdenum-rhenium. This material is easily gun-bored to near the tolerances required, and finish machined with steps at each end that capture the orifice plate and the mounting flange. This provides the manufacturability and robustness needed for flight applications, and eliminates the need for expensive e-beam welding used in prior cathodes. The LaB6 insert is protected from direct contact with the refractory metal tube by thin, graphite sleeves in a cup-arrangement around the ends of the insert. The sleeves, insert, and orifice plate are held in place by a ceramic spacer and tungsten spring inserted inside the tube. To heat the cathode, an insulating tube is slipped around the refractory metal hollow tube, which can be made of high-temperature materials like boron nitride or aluminum nitride. A screw-shaped slot, or series of slots, is machined in the outside of the ceramic tube to constrain a refractory metal wire wound inside the slot that is used as the heater. The screw slot can hold a single heater wire that is then connected to the front of the cathode tube by tack-welding to complete the electrical circuit, or it can be a double slot that takes a bifilar wound heater with both leads coming out

  3. Remarkably enhanced photocatalytic hydrogen evolution over MoS2 nanosheets loaded on uniform CdS nanospheres

    Science.gov (United States)

    Chai, Bo; Xu, Mengqiu; Yan, Juntao; Ren, Zhandong

    2018-02-01

    The MoS2/CdS composites with layered MoS2 loaded on uniform CdS nanospheres were synthesized by a two-step process combination hydrothermal and solvothermal treatments, and then applied in photocatalytic hydrogen evolution under visible light irradiation. The as-prepared samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrometer (EDS), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Raman spectra, UV-vis diffuse reflectance absorption spectra (UV-DRS), nitrogen adsorption-desorption measurement, photoluminescence spectra (PL) and photoelectrochemical tests. The effects of loading contents of MoS2 in the composites on the photocatalytic H2 evolution activity were comparatively investigated with 0.45 mol L-1 Na2S and 0.55 mol L-1 Na2SO3 as sacrificial agents. The results showed that the 5 wt% MoS2/CdS composite could achieve the highest photocatalytic H2 evolution rate of 372 μmol h-1 and apparent quantum efficiency (AQE) about 7.31% under 420 nm monochromatic light irradiation. The remarkably enhanced photocatalytic activity of MoS2/CdS composite could be attributed to the effective transfer and separation of photogenerated charge carriers, and MoS2 being as a cocatalyst to facilitating photocatalytic H2 evolution reaction. A tentative mechanism of MoS2/CdS composites as photocatalysts for H2 evolution was proposed.

  4. The correlation between electroluminescence properties and the microstructure of Europium-implanted MOS light emitting diodes

    International Nuclear Information System (INIS)

    Rebohle, L.; Lehmann, J.; Kanjilal, A.; Prucnal, S.; Nazarov, A.; Tyagulskii, I.; Skorupa, W.; Helm, M.

    2009-01-01

    In this work we investigated the correlation between the EL, the electrical properties and the microstructure of Eu-implanted MOS light emitting devices. The EL spectrum shows a red EL line centered at 618 nm which is usually assigned to Eu 3+ and a broad blue-green EL band attributed to Eu 2+ . It was found that the red EL is favored by low injection currents, low Eu concentrations, lower anneal temperatures and shorter anneal times, especially for flash lamp annealing. These properties are correlated with microstructural changes triggered by ion implantation and annealing, especially with the formation and ripening of Eu or Eu oxide clusters which strongly quench the red EL. Finally, the influence of Eu agglomerations at the injecting interface on the electrical properties of the light emitter is discussed.

  5. SOI Fully complementary BI-JFET-MOS technology for analog-digital applications with vertical BJT's

    International Nuclear Information System (INIS)

    Delevoye, E.; Blanc, J.P.; Bonaime, J.; Pontcharra, J. de; Gautier, J.; Martin, F.; Truche, R.

    1993-01-01

    A silicon-on-insulator, fully complementary, Bi-JFET-MOS technology has been developed for realizing multi-megarad hardened mixed analog-digital circuits. The six different active components plus resistors and capacitors have been successfully integrated in a 25-mask process using SIMOX substrate and 1 μm thick epitaxial layer. Different constraints such as device compatibility, complexity not higher than BiCMOS technology and breakdown voltages suitable for analog applications have been considered. Several process splits have been realized and all the characteristics presented here have been measured on the same split. P + gate is used for PMOS transistor to get N and PMOST symmetrical characteristics. Both NPN and PNP vertical bipolar transistors with poly-emitters show f T > 5 GHz. 2-separated gate JFET's need no additional mask. (authors). 9 figs., 1 tab

  6. Miniature X-ray Tube for Electric Brachytherapy using Carbon Nanotube Field Emitter

    International Nuclear Information System (INIS)

    Heo, Sung Hwan; Kim, Hyun Jin; Ha, Jun Mok; Cho, Sung Oh

    2011-01-01

    An electric brachytherapy using a miniature x-ray tube has a major advantage to reduce the x-ray exposure of human body during the cancer radiation therapy by optimal positioning of x-ray radiation source and treatment objectives. In the view of a smaller electronic x-ray source, the CNT field emitter based xray tube can be more minimized than thermionic filament emitter based one because of a simple power supplier connection of cold field emission in diode type as well as a higher electron emission brightness of CNT. This abstract is for introducing the design of a prototype CNT field emitter based miniature x-ray tube. We have vacuum sealed CNT miniature x-ray tube with 7∼10 mm diameter, and characteristics of electron emission and x-ray transportation using MCNP5 code are surveyed

  7. Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

    Science.gov (United States)

    Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

    2017-10-01

    We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

  8. Emittance scans for CMS luminosity calibration in 2017

    CERN Document Server

    CMS Collaboration

    2018-01-01

    Emittance scans are short van der Meer type scans performed at the beginning and at the end of LHC fills. The beams are scanned against each other in X and Y planes in 7 displacement steps. These scans are used for LHC diagnostics and since 2017 for a cross check of the CMS luminosity calibration. An XY pair of scans takes around 3 minutes. The BRIL project provides to LHC three independent online luminosity measurement from the Pixel Luminosity Telescope (PLT), the Fast Beam Condition Monitor (BCM1F) and the Forward calorimeter (HF). The excellent performance of the BRIL detector front-ends, fast back-end electronics and CMS XDAQ based data processing and publication allow the use of emittance scans for linearity and stability studies of the luminometers. Emittance scans became a powerful tool and dramatically improved the understanding of the luminosity measurement during the year. Since each luminometer is independently calibrated in every scan the measurements are independent and ratios of luminometers ca...

  9. Fowler Nordheim theory of carbon nanotube based field emitters

    Energy Technology Data Exchange (ETDEWEB)

    Parveen, Shama; Kumar, Avshish [Department of Physics, Jamia Millia Islamia (Central University), New Delhi (India); Husain, Samina [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi (India); Husain, Mushahid, E-mail: mush_reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (Central University), New Delhi (India)

    2017-01-15

    Field emission (FE) phenomena are generally explained in the frame-work of Fowler Nordheim (FN) theory which was given for flat metal surfaces. In this work, an effort has been made to present the field emission mechanism in carbon nanotubes (CNTs) which have tip type geometry at nanoscale. High aspect ratio of CNTs leads to large field enhancement factor and lower operating voltages because the electric field strength in the vicinity of the nanotubes tip can be enhanced by thousand times. The work function of nanostructure by using FN plot has been calculated with reverse engineering. With the help of modified FN equation, an important formula for effective emitting area (active area for emission of electrons) has been derived and employed to calculate the active emitting area for CNT field emitters. Therefore, it is of great interest to present a state of art study on the complete solution of FN equation for CNTs based field emitter displays. This manuscript will also provide a better understanding of calculation of different FE parameters of CNTs field emitters using FN equation.

  10. Superconducting wiggler magnets for beam-emittance damping rings

    CERN Document Server

    Schoerling, Daniel

    2012-01-01

    Ultra-low emittance beams with a high bunch charge are necessary for the luminosity performance of linear electron-positron colliders, such as the Compact Linear Collider (CLIC). An effective way to create ultra-low emittance beams with a high bunch charge is to use damping rings, or storage rings equipped with strong damping wiggler magnets. The remanent field of the permanent magnet materials and the ohmic losses in normal conductors limit the economically achievable pole field in accelerator magnets operated at around room temperature to below the magnetic saturation induction, which is 2.15 T for iron. In wiggler magnets, the pole field in the center of the gap is reduced further like the hyperbolic cosine of the ratio of the gap size and the period length multiplied by pi. Moreover, damping wiggler magnets require relatively large gaps because they have to accept the un-damped beam and to generate, at a small period length, a large magnetic flux density amplitude to effectively damp the beam emittance....

  11. Nanometer emittance ultralow charge beams from rf photoinjectors

    Directory of Open Access Journals (Sweden)

    R. K. Li

    2012-09-01

    Full Text Available In this paper we discuss the generation of a new class of high brightness relativistic electron beams, characterized by ultralow charge (0.1–1 pC and ultralow normalized emittance (<50  nm. These beams are created in rf photoinjectors when the laser is focused on the cathode to very small transverse sizes (<30  μm rms. In this regime, the charge density at the cathode approaches the limit set by the extraction electric field. By shaping the laser pulse to have a cigarlike aspect ratio (the longitudinal dimension much larger than the transverse dimension and a parabolic temporal profile, the resulting space charge dominated dynamics creates a uniformly filled ellipsoidal distribution and the emittance can be nearly preserved to its thermal value. We also present a new method, based on a variation of the pepper-pot technique, for single shot measurements of the ultralow emittances for this new class of beams.

  12. Internal emitter research and standard setting

    International Nuclear Information System (INIS)

    Stannard, J.N.

    1981-01-01

    The history of the use of data from internal emitter research in the derivation of safety standards is reviewed. At first, observed biological effects were correlated with body burdens or exposure levels. This direct approach is illustrated by detailed accounts of the cases of uranium and plutonium. In the 1950's, when it was decided to provide standards for over 200 isotopes, the direct approach was replaced by a system of calculations. This necessitated changes in internal emitter research programs to provide metabolic data, and the development of models such as Reference Man and the Lung and Gastrointestinal Tract models. The continuing contribution of internal emitter research to standard setting can be seen in the references quoted in the metabolic data section of the new ICRP report (ICRP Publication 30). Present trends suggest a possible return to the direct use of internal emitter effects data for obtaining risk estimates. (U.K.)

  13. Beam emittance measurements on multicusp ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Sarstedt, M.; Lee, Y.; Leung, K.N. [and others

    1995-08-01

    Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 {mu}m patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma.

  14. Beam emittance measurements on multicusp ion sources

    International Nuclear Information System (INIS)

    Sarstedt, M.; Lee, Y.; Leung, K.N.

    1995-08-01

    Multicusp ion sources are used for various applications. Presently, the implementation of this type of ion source planned for the development of an ion beam lithography machine, which will be used for the projection of sub-0.2 μm patterns onto a wafer substrate. Since, for this application, a very good beam quality and a small ion energy spread are required, emittance measurements have been performed on a multicusp ion source for various source conditions. It is shown that the installation of proper capacitors between the extraction electrodes is necessary to avoid rf-pickup, which otherwise leads to a distortion of the beam emittance. The influence of the magnetic filter field on the beam emittance has been investigated, and the beam emittance of a dc filament-discharge plasma has also been compared to that of an rf-generated plasma

  15. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

    Science.gov (United States)

    Wu, Wenzhuo; Wang, Lei; Li, Yilei; Zhang, Fan; Lin, Long; Niu, Simiao; Chenet, Daniel; Zhang, Xian; Hao, Yufeng; Heinz, Tony F; Hone, James; Wang, Zhong Lin

    2014-10-23

    The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics. With their high crystallinity and ability to withstand enormous strain, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m(-2) and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.

  16. Self-powered detectors with thulium emitter

    International Nuclear Information System (INIS)

    Haller, P.; Klar, E.

    1978-01-01

    In addition to fission chambers, prompt-indicating self-powered (SPN) detectors are used for measuring the neutron flux density in the core of power reactors. Although current SPN detectors with a cobalt emitter give satisfactora results, detectors with other emitter materials have been analyzed and tested. The author describes the properties and decay pattern of the nuclide thulium and presents the results of measurements made while testing thulium detectors. (orig.) [de

  17. Alpha-emitters for medical therapy workshop

    International Nuclear Information System (INIS)

    Feinendegen, L.E.; McClure, J.J.

    1996-01-01

    A workshop on ''Alpha-Emitters for Medical Therapy'' was held May 30-31, 1996 in Denver Colorado to identify research goals and potential clinical needs for applying alpha-particle emitters and to provide DOE with sufficient information for future planning. The workshop was attended by 36 participants representing radiooncology, nuclear medicine, immunotherapy, radiobiology, molecular biology, biochemistry, radiopharmaceutical chemistry, dosimetry, and physics. This report provides a summary of the key points and recommendations arrived at during the conference

  18. Alpha-emitters for medical therapy workshop

    Energy Technology Data Exchange (ETDEWEB)

    Feinendegen, L.E.; McClure, J.J.

    1996-12-31

    A workshop on ``Alpha-Emitters for Medical Therapy`` was held May 30-31, 1996 in Denver Colorado to identify research goals and potential clinical needs for applying alpha-particle emitters and to provide DOE with sufficient information for future planning. The workshop was attended by 36 participants representing radiooncology, nuclear medicine, immunotherapy, radiobiology, molecular biology, biochemistry, radiopharmaceutical chemistry, dosimetry, and physics. This report provides a summary of the key points and recommendations arrived at during the conference.

  19. Defect Functionalization of MoS2 nanostructures as toxic gas sensors: A review

    Science.gov (United States)

    Ramanathan, A. A.

    2018-02-01

    Toxic gas sensing plays an important role in many parts of our life from environmental protection, human health, agriculture to biomedicine. The importance of detecting toxic gases in the environment cannot be minimised in today’s highly polluted world and the reality of global warming. Carbon monoxide and NO gas are highly toxic air pollutants and can cause serious health problems. Therefore, materials able to detect these toxic gases are urgently needed. Doping and defect substitution is a versatile and new tool for changing the chemical and electronic properties of 2D layered materials and boosting the applications of these materials. Molybdenum disulphide (MoS2) as a 2D layered material has unique properties and applications due its semiconducting nature, bandgap and layered structure. In the past decade, although, extensive research of Graphene as a gas sensor was conducted, the zero bandgap limited its potential and applicability. This is overcome in MoS2 nanostructures (MSNs) and the current focus is defect engineering of MSNs. The large surface to volume ratio, bandgap and cheapness makes MSNs very attractive for gas sensor applications. The idea is fuelled by the recent finding of Ding et al [16] of successful doping strategies on monolayer MoS2 for enhanced NO detection. Moreover, the work of Luo et al [17] shows that substitutional doping is the new way of boosting and engineering the properties of ML MoS2. A short and focused report in this exciting field is presented in this review.

  20. Large-area MoS2 grown using H2S as the sulphur source

    International Nuclear Information System (INIS)

    Dumcenco, Dumitru; Ovchinnikov, Dmitry; Lopez Sanchez, Oriol; Kis, Andras; Gillet, Philippe; Alexander, Duncan T L; Lazar, Sorin; Radenovic, Aleksandra

    2015-01-01

    We report on the growth of molybdenum disulphide (MoS 2 ) using H 2 S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate plane), depending on the H 2 S:H 2 ratio in the reaction gas mixture and temperature at which they are introduced during growth. Optical and atomic force microscopy measurements on horizontal MoS 2 demonstrate the formation of monolayer triangular-shape domains that merge into a continuous film. Scanning transmission electron microscopy of monolayer MoS 2 shows a regular atomic structure with a hexagonal symmetry. Raman and photoluminescence spectra confirm the monolayer thickness of the material. Field-effect transistors fabricated on MoS 2 domains that are transferred onto Si/SiO 2 substrates show a mobility similar to previously reported exfoliated and chemical vapor deposition-grown materials. (paper)

  1. Effect of Dielectric Interface on the Performance of MoS2 Transistors.

    Science.gov (United States)

    Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

    2017-12-27

    Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

  2. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  3. A critical study of emittance measurements of intense low-energy proton beams

    CERN Document Server

    Evans, Lyndon R

    1972-01-01

    The measurement of emittance in low energy proton beams suffers from two perturbing effects: 1) the neutralisation of the beam by backstreaming secondary electrons and 2) the space charge blowup of the beam sample between defining and analysing apparatus. An experimental study shows a significant change of the emittance orientation when bias is used to eliminate the secondary electrons. Biased and non-biased cases are also compared with computed dynamics including space charge. Criteria for the slit size and drift distance which make the space charge blow-up negligible are derived. In addition a transverse coherent oscillation of the proton beam, which was revealed the measurements, is discussed briefly. (11 refs).

  4. Multinozzle emitter arrays for ultrahigh-throughput nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing; Mao, Pan; Wang, Hung-Ta; Yang, Peidong

    2017-10-17

    The present invention provides for a structure comprising a plurality of emitters, wherein a first nozzle of a first emitter and a second nozzle of a second emitter emit in two directions that are not or essentially not in the same direction; wherein the walls of the nozzles and the emitters form a monolithic whole. The present invention also provides for a structure comprising an emitter with a sharpened end from which the emitter emits; wherein the emitters forms a monolithic whole. The present invention also provides for a fully integrated separation of proteins and small molecules on a silicon chip before the electrospray mass spectrometry analysis.

  5. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  6. MoS2 quantum dots@TiO2 nanotube composites with enhanced photoexcited charge separation and high-efficiency visible-light driven photocatalysis

    Science.gov (United States)

    Zhao, Fenfen; Rong, Yuefei; Wan, Junmin; Hu, Zhiwen; Peng, Zhiqin; Wang, Bing

    2018-03-01

    MoS2 quantum dots (QDs) that are 5 nm in size were deposited on the surface of ultrathin TiO2 nanotubes (TNTs) with 5 nm wall thickness by using an improved hydrothermal method to form a MoS2 QDs@TNT visible-light photocatalyst. The ultrathin TNTs with high percentage of photocatalytic reactive facets were fabricated by the commercially available TiO2 nanoparticles (P25) through an improved hydrothermal method, and the MoS2 QDs were acquired by using a surfactant-assisted technique. The novel MoS2 QDs@TNT photocatalysts showed excellent photocatalytic activity with a decolorization rate of 92% or approximately 3.5 times more than that of pure TNTs for the high initial concentration of methylene blue solution (20 mg l-1) within 40 min under visible-light irradiation. MoS2 as the co-catalysts favored the broadening of TNTs into the visible-light absorption scope. The quantum confinement and edge effects of the MoS2 QDs and the heterojunction formed between the MoS2 QDs and TNTs efficiently extended the lifetime of photoinduced charges, impeded the recombination of photoexcited electron-hole pairs, and improved the visible-light-driven high-efficiency photocatalysis.

  7. Gold nanoparticles on MoS2 layered crystal flakes

    International Nuclear Information System (INIS)

    Cao, Wei; Pankratov, Vladimir; Huttula, Marko; Shi, Xinying; Saukko, Sami; Huang, Zhongjia; Zhang, Meng

    2015-01-01

    Inorganic layered crystal MoS 2 is considered as one of the most promising and efficient semiconductor materials for future transistors, photoelectronics, and electrocatalysis. To boost MoS 2 -based material applications, one direction is to grow physically and chemically reactive nanoparticles onto MoS 2 . Here we report on a simple route to synthesis crystalized MoS 2 –Au complexes. The gold nanoparticles were grown on MoS 2 flakes through a wet method in the oxygen free environment at room temperature. Nanoparticles with diameters varying from 9 nm to 429 nm were controlled by the molar ratios of MoS 2 and HAuCl 4 precursors. MoS 2 host flakes keep intrinsic honeycomb layered structures and the Au nanoparticles cubic-center crystal microstructures. From product chemical states analysis, the synthesis was found driven by redox reactions between the sulphide and the chloroauric acid. Photoluminescence measurement showed that introducing Au nanoparticles onto MoS 2 stacks substantially prompted excitonic transitions of stacks, as an analogy for doping Si wafers with dopants. Such composites may have potential applications in wide ranges similar as the doped Si. - Highlights: • The Au nanoparticles were decorated on MoS 2 in oxygen free ambiences via a wet method. • The Au nanoparticles are size-controllable and crystalized. • Chemical reaction scheme was clarified. • The MoS 2 –Au complexes have strong photoluminescent properties

  8. Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

    International Nuclear Information System (INIS)

    Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

    1979-01-01

    Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

  9. Synergetic effect of MoS2 and graphene as cocatalysts for enhanced photocatalytic activity of BiPO4 nanoparticles

    Science.gov (United States)

    Lv, Hua; Liu, Yumin; Tang, Haibo; Zhang, Peng; Wang, Jianji

    2017-12-01

    The photodegradation of organic pollutants is an attractive green chemistry technology for water pollution control. Here we prepared a new composite material consisting of BiPO4 nanocrystals grown on layered graphene and MoS2 as a high-performance photocatalyst for the photodegradation of organic pollutants. This composite material was synthesized by a facile one-pot microwave-assisted hydrothermal technique in the presence of layered graphene and MoS2. Through optimizing the loading content of each component, the BiPO4-MoS2/graphene nanocomposite exhibited the highest photocatalytic activity for the degradation of Rhodamine (RhB) when the content of MoS2 and graphene was 2 wt% and 7 wt%, respectively. The enhanced photocatalytic activity of the new composite photocatalyst was attributed to the positive synergetic effect of the layered graphene and MoS2 as cocatalyst, which acted as electron collector and transporter for the interfacial electron transfer from BiPO4 to electron acceptor in the aqueous solution and thus suppressed the charge recombination and made the photogenerated holes more available to participated in the oxidation process. Moreover, the presence of layered MoS2/graphene hybrid could offer more reactive sites and activated the O2 molecular in water to form superoxide radical, thereby resulting in the enhanced photocatalytic activity.

  10. Current-Fluctuation Mechanism of Field Emitters Using Metallic Single-Walled Carbon Nanotubes with High Crystallinity

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2017-12-01

    Full Text Available Field emitters can be used as a cathode electrode in a cathodoluminescence device, and single-walled carbon nanotubes (SWCNTs that are synthesized by arc discharge are expected to exhibit good field emission (FE properties. However, a cathodoluminescence device that uses field emitters radiates rays whose intensity considerably fluctuates at a low frequency, and the radiant fluctuation is caused by FE current fluctuation. To solve this problem, is very important to obtain a stable output for field emitters in a cathodoluminescence device. The authors consider that the electron-emission fluctuation is caused by Fowler–Nordheim electron tunneling and that the electrons in the Fowler–Nordheim regime pass through an inelastic potential barrier. We attempted to develop a theoretical model to analyze the power spectrum of the FE current fluctuation using metallic SWCNTs as field emitters, owing to their electrical conductivity by determining their FE properties. Field emitters that use metallic SWCNTs with high crystallinity were successfully developed to achieve a fluctuating FE current from field emitters at a low frequency by employing inelastic electron tunneling. This paper is the first report of the successful development of an inelastic-electron-tunneling model with a Wentzel–Kramers–Brillouin approximation for metallic SWCNTs based on the evaluation of FE properties.

  11. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  12. Measurements of Thermal Emittance for Cesium Telluride Photocathodes at PITZ

    CERN Document Server

    Miltchev, V; Grabosch, H J; Han, J H; Krasilnikov, M; Oppelt, A; Petrosian, B; Staykov, L; Stephan, F

    2005-01-01

    The thermal emittance determines the lower emittance limit and its measurement is of high importance to understand the ultimate injector performance. In this contribution we present results of thermal emittance measurements under rf operation conditions for various Cs2Te cathodes and different accelerating gradients. Measurements of thermal emittance scaling with the cathode laser spot size are presented and analysed. The significance of the Schottky effect in the emittance formation process is discussed.

  13. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    International Nuclear Information System (INIS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  14. Photoluminescence of MoS2 Prepared by Effective Grinding-Assisted Sonication Exfoliation

    Directory of Open Access Journals (Sweden)

    Jing-Yuan Wu

    2014-01-01

    Full Text Available Exfoliation of bulk molybdenum disulfide (MoS2 using sonication in appropriate solvent is a promising route to large-scale preparation of few-layered or monolayered crystals. Grinding-assisted sonication exfoliation was used for preparing monolayered MoS2 nanosheets from natural mineral molybdenite. By controlling the sonication time, larger crystallites could be further exfoliated to smaller as well as thinner nanosheets without damaging their structures. The concentration of 1.6 mg mL−1 of final solution could be achieved. Several microscopic techniques like scanning electron microscopy, transmission electron microscopy, and atomic force microscopy were employed to evaluate the exfoliation results. Strong photoluminescence with the peak centered at 440 nm was also observed in the resulting dispersion which included several small lateral-sized (~3 nm nanostructures.

  15. Changes in the composition, structure and friction property of sputtered MoS2 films by LEO environment exposure

    International Nuclear Information System (INIS)

    Gao, Xiaoming; Hu, Ming; Sun, Jiayi; Fu, Yanlong; Yang, Jun; Liu, Weimin; Weng, Lijun

    2015-01-01

    Highlights: • Sputtered MoS 2 films were exposed in real low earth orbit (LEO) environment. • LEO exposure resulted in the oxidation and S loss of MoS 2 film surface. • Depth affected by the LEO exposure was limited within 10 nm. • The exposed MoS 2 film exhibited a slight increase in friction coefficient at initial sliding stage. - Abstract: Radio frequency-sputtered MoS 2 films had been exposed for 43.5 h in real low earth orbit (LEO) space environment by a space environment exposure device (SEED) aboard China Shenzhou-7 manned spaceship. The composition, morphology, phase structure and friction property of the exposed films were investigated using X-ray photoelectron spectroscope (XPS), X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), X-ray energy-dispersive spectroscopy (EDS) and ball-on-disk tribometer. XRD and EDS results revealed that the as-deposited MoS 2 films were characterized by a MoS x O y phase structure, in which x and y values were determined to be ∼0.65 and 1.24, respectively. XPS analysis revealed that due to space atomic oxygen attack, the film surface was oxidized to MoO 3 and MoS x O y with higher O concentration, while the partial S was lost. However, the affected depth was restricted within the surface layer because of protective function of the oxidation layer. As a result, the friction coefficient only exhibited a slight increase at initial stage of sliding friction

  16. Target Capture during Mos1 Transposition*

    Science.gov (United States)

    Pflieger, Aude; Jaillet, Jerôme; Petit, Agnès; Augé-Gouillou, Corinne; Renault, Sylvaine

    2014-01-01

    DNA transposition contributes to genomic plasticity. Target capture is a key step in the transposition process, because it contributes to the selection of new insertion sites. Nothing or little is known about how eukaryotic mariner DNA transposons trigger this step. In the case of Mos1, biochemistry and crystallography have deciphered several inverted terminal repeat-transposase complexes that are intermediates during transposition. However, the target capture complex is still unknown. Here, we show that the preintegration complex (i.e., the excised transposon) is the only complex able to capture a target DNA. Mos1 transposase does not support target commitment, which has been proposed to explain Mos1 random genomic integrations within host genomes. We demonstrate that the TA dinucleotide used as the target is crucial both to target recognition and in the chemistry of the strand transfer reaction. Bent DNA molecules are better targets for the capture when the target DNA is nicked two nucleotides apart from the TA. They improve strand transfer when the target DNA contains a mismatch near the TA dinucleotide. PMID:24269942

  17. Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

    KAUST Repository

    Tangi, Malleswararao; Shakfa, Mohammad Khaled; Mishra, Pawan; Li, Ming-Yang; Chiu, Ming-Hui; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

  18. Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

    KAUST Repository

    Tangi, Malleswararao

    2017-09-22

    We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

  19. Pristine Basal- and Edge-Plane-Oriented Molybdenite MoS2 Exhibiting Highly Anisotropic Properties.

    Science.gov (United States)

    Tan, Shu Min; Ambrosi, Adriano; Sofer, Zdenĕk; Huber, Štěpán; Sedmidubský, David; Pumera, Martin

    2015-05-04

    The layered structure of molybdenum disulfide (MoS2 ) is structurally similar to that of graphite, with individual sheets strongly covalently bonded within but held together through weak van der Waals interactions. This results in two distinct surfaces of MoS2 : basal and edge planes. The edge plane was theoretically predicted to be more electroactive than the basal plane, but evidence from direct experimental comparison is elusive. Herein, the first study comparing the two surfaces of MoS2 by using macroscopic crystals is presented. A careful investigation of the electrochemical properties of macroscopic MoS2 pristine crystals with precise control over the exposure of one plane surface, that is, basal plane or edge plane, was performed. These crystals were characterized thoroughly by AFM, Raman spectroscopy, X-ray photoelectron spectroscopy, voltammetry, digital simulation, and DFT calculations. In the Raman spectra, the basal and edge planes show anisotropy in the preferred excitation of E2g and A1g phonon modes, respectively. The edge plane exhibits a much larger heterogeneous electron transfer rate constant k(0) of 4.96×10(-5) and 1.1×10(-3)  cm s(-1) for [Fe(CN)6 ](3-/4-) and [Ru(NH3 )6 ](3+/2+) redox probes, respectively, compared to the basal plane, which yielded k(0) tending towards zero for [Fe(CN)6 ](3-/4-) and about 9.3×10(-4)  cm s(-1) for [Ru(NH3 )6 ](3+/2+) . The industrially important hydrogen evolution reaction follows the trend observed for [Fe(CN)6 ](3-/4-) in that the basal plane is basically inactive. The experimental comparison of the edge and basal planes of MoS2 crystals is supported by DFT calculations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Barium Depletion in Hollow Cathode Emitters

    Science.gov (United States)

    Polk, James E.; Capece, Angela M.; Mikellides, Ioannis G.; Katz, Ira

    2009-01-01

    The effect of tungsten erosion, transport and redeposition on the operation of dispenser hollow cathodes was investigated in detailed examinations of the discharge cathode inserts from an 8200 hour and a 30,352 hour ion engine wear test. Erosion and subsequent re-deposition of tungsten in the electron emission zone at the downstream end of the insert reduces the porosity of the tungsten matrix, preventing the ow of barium from the interior. This inhibits the interfacial reactions of the barium-calcium-aluminate impregnant with the tungsten in the pores. A numerical model of barium transport in the internal xenon discharge plasma shows that the barium required to reduce the work function in the emission zone can be supplied from upstream through the gas phase. Barium that flows out of the pores of the tungsten insert is rapidly ionized in the xenon discharge and pushed back to the emitter surface by the electric field and drag from the xenon ion flow. This barium ion flux is sufficient to maintain a barium surface coverage at the downstream end greater than 0.6, even if local barium production at that point is inhibited by tungsten deposits. The model also shows that the neutral barium pressure exceeds the equilibrium vapor pressure of the impregnant decomposition reaction over much of the insert length, so the reactions are suppressed. Only a small region upstream of the zone blocked by tungsten deposits is active and supplies the required barium. These results indicate that hollow cathode failure models based on barium depletion rates in vacuum dispenser cathodes are very conservative.

  1. ReaxFF Reactive Force-Field Study of Molybdenum Disulfide (MoS2).

    Science.gov (United States)

    Ostadhossein, Alireza; Rahnamoun, Ali; Wang, Yuanxi; Zhao, Peng; Zhang, Sulin; Crespi, Vincent H; van Duin, Adri C T

    2017-02-02

    Two-dimensional layers of molybdenum disulfide, MoS 2 , have been recognized as promising materials for nanoelectronics due to their exceptional electronic and optical properties. Here we develop a new ReaxFF reactive potential that can accurately describe the thermodynamic and structural properties of MoS 2 sheets, guided by extensive density functional theory simulations. This potential is then applied to the formation energies of five different types of vacancies, various vacancy migration barriers, and the transition barrier between the semiconducting 2H and metallic 1T phases. The energetics of ripplocations, a recently observed defect in van der Waals layers, is examined, and the interplay between these defects and sulfur vacancies is studied. As strain engineering of MoS 2 sheets is an effective way to manipulate the sheets' electronic and optical properties, the new ReaxFF description can provide valuable insights into morphological changes that occur under various loading conditions and defect distributions, thus allowing one to tailor the electronic properties of these 2D crystals.

  2. Photovoltaic heterojunctions of fullerenes with MoS2 and WS2 monolayers

    KAUST Repository

    Gan, Liyong

    2014-04-17

    First-principles calculations are performed to explore the geometry, bonding, and electronic structures of six ultrathin photovoltaic heterostructures consisting of pristine and B- or N-doped fullerenes and MoS2 or WS2 monolayers. The fullerenes prefer to be attached with a hexagon parallel to the monolayer, where B and N favor proximity to the monolayer. The main electronic properties of the subsystems stay intact, suggesting weak interfacial interaction. Both the C60/MoS 2 and C60/WS2 systems show type-II band alignments. However, the built-in potential in the former case is too small to effectively drive electron-hole separation across the interface, whereas the latter system is predicted to show good photovoltaic performance. Unfortunately, B and N doping destroys the type-II band alignment on MoS2 and preserves it only in one spin channel on WS2, which is unsuitable for excitonic solar cells. Our results suggest that the C60/WS 2 system is highly promising for excitonic solar cells. © 2014 American Chemical Society.

  3. Measurement of X-ray beam emittance using crystal optics at an X-ray undulator beamline

    International Nuclear Information System (INIS)

    Kohmura, Yoshiki; Suzuki, Yoshio; Awaji, Mitsuhiro; Tanaka, Takashi; Hara, Toru; Goto, Shunji; Ishikawa, Tetsuya

    2000-01-01

    We present a method of using crystal optics to measure the emittance of the X-ray source. Two perfect crystals set in (++) configuration work as a high-resolution collimator. The phase-space diagram (i.e. beam cross-section and angular distribution) could be determined without any assumptions on the light source. When the measurement is done at short wavelength radiation from undulator, the electron beam emittance is larger than the diffraction limit of the X-rays. Therefore, the electron beam emittance could be estimated. The measurement was done with the hard X-rays of 18.5 and 55 keV from an undulator beamline, BL 47XU, of SPring-8. The horizontal emittance of the X-ray beam was estimated to be about 7.6 nmrad, close to the designed electron beam emittance of the storage ring (7 nmrad). Some portions of the instrumental functions, such as the scattering by filters and windows along the beamline and the slight bent of the crystal planes of the monochromator, could not be precisely evaluated, but an upper limit for the vertical emittance of the electron beam could be obtained as 0.14 nmrad

  4. A digital miniature x-ray tube with a high-density triode carbon nanotube field emitter

    International Nuclear Information System (INIS)

    Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Kim, Jae-Woo; Song, Yoon-Ho; Ahn, Seungjoon

    2013-01-01

    We have fabricated a digital miniature x-ray tube (6 mm in diameter and 32 mm in length) with a high-density triode carbon nanotube (CNT) field emitter for special x-ray applications. The triode CNT emitter was densely formed within a diameter of below 4 mm with the focusing-functional gate. The brazing process enables us to obtain and maintain a desired vacuum level for the reliable electron emission from the CNT emitters after the vacuum packaging. The miniature x-ray tube exhibited a stable and reliable operation over 250 h in a pulse mode at an anode voltage of above 25 kV.

  5. Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

    KAUST Repository

    Lee, Kevin C. J.

    2015-11-17

    The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems.

  6. Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

    Science.gov (United States)

    Zhao, Yuxi; Song, Jeong-Gyu; Ryu, Gyeong Hee; Ko, Kyung Yong; Woo, Whang Je; Kim, Youngjun; Kim, Donghyun; Lim, Jun Hyung; Lee, Sunhee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

    2018-05-08

    The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

  7. Effects of adding metals to MoS2 in a ytterbium doped Q-switched fiber laser

    Science.gov (United States)

    Khaleque, Abdul; Liu, Liming

    2018-03-01

    Molybdenum disulfide (MoS2) is widely used in lubricants, metallic alloys and in electronic and optical components. It is also used as saturable absorbers (SAs) in lasers (e.g. fiber lasers): a simple deposition of MoS2 on the fiber end can create a saturable absorber without the necessity of extensive alignment of the optical beam. In this article, we study the effects of adding different metals (Cr, Au, and Al) to MoS2 in a ytterbium (Yb)-doped Q-switched fiber laser. Experimental results show that the addition of a thin layer of gold and aluminium can reduce pulse durations to about 5.8 μs and 8.5 μs, respectively, compared with pure MoS2 with pulse duration of 12 μs. Experimental analysis of the combined metal and MoS2 based composite SAs can be useful in fiber laser applications where it may also find applications in medical, three dimensional (3D) active imaging and dental applications.

  8. Two-dimensional MoS2-graphene hybrid nanosheets for high gravimetric and volumetric lithium storage

    Science.gov (United States)

    Deng, Yakai; Ding, Lixin; Liu, Qixing; Zhan, Liang; Wang, Yanli; Yang, Shubin

    2018-04-01

    Two-dimensional (2D) MoS2-graphene (MoS2-G) hybrid is fabricated simultaneously and scalablely with an efficient electrochemical exfoliation approach from the combined bulk MoS2-graphite wafer. The as-prepared 2D MoS2-G hybrid is tightly covered with each other with lateral sizes of 600 nm to few micrometers and can be directly assembled to flexible films for lithium storage. When used as anode material for lithium ion battery, the resultant MoS2-G hybrid film exhibits both high gravimetric (750 mA h g-1 at 50 mA g-1) and volumetric capacities (1200 mA h cm-3 at 0.1 mA cm-2). Such excellent electrochemical performance should attributed to the unique 2D structure and good conductive graphene network, which not only facilitates the diffusion of lithium ions, but also improves the fast transfer of electrons, satisfying the kinetics requirements for rapid lithium storage.

  9. Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer

    KAUST Repository

    Lee, Kevin C. J.; Chen, Yi-Huan; Lin, Hsiang-Yu; Cheng, Chia-Chin; Chen, Pei-Ying; Wu, Ting-Yi; Shih, Min-Hsiung; Wei, Kung-Hwa; Li, Lain-Jong; Chang, Chien-Wen

    2015-01-01

    The 2-D transition metal dichalcogenide (TMD) semiconductors, has received great attention due to its excellent optical and electronic properties and potential applications in field-effect transistors, light emitting and sensing devices. Recently surface plasmon enhanced photoluminescence (PL) of the weak 2-D TMD atomic layers was developed to realize the potential optoelectronic devices. However, we noticed that the enhancement would not increase monotonically with increasing of metal plasmonic objects and the emission drop after the certain coverage. This study presents the optimized PL enhancement of a monolayer MoS2 in the presence of gold (Au) nanorods. A localized surface plasmon wave of Au nanorods that generated around the monolayer MoS2 can provide resonance wavelength overlapping with that of the MoS2 gain spectrum. These spatial and spectral overlapping between the localized surface plasmon polariton waves and that from MoS2 emission drastically enhanced the light emission from the MoS2 monolayer. We gave a simple model and physical interpretations to explain the phenomena. The plasmonic Au nanostructures approach provides a valuable avenue to enhancing the emitting efficiency of the 2-D nano-materials and their devices for the future optoelectronic devices and systems.

  10. Generalized superradiant assembly for nanophotonic thermal emitters

    Science.gov (United States)

    Mallawaarachchi, Sudaraka; Gunapala, Sarath D.; Stockman, Mark I.; Premaratne, Malin

    2018-03-01

    Superradiance explains the collective enhancement of emission, observed when nanophotonic emitters are arranged within subwavelength proximity and perfect symmetry. Thermal superradiant emitter assemblies with variable photon far-field coupling rates are known to be capable of outperforming their conventional, nonsuperradiant counterparts. However, due to the inability to account for assemblies comprising emitters with various materials and dimensional configurations, existing thermal superradiant models are inadequate and incongruent. In this paper, a generalized thermal superradiant assembly for nanophotonic emitters is developed from first principles. Spectral analysis shows that not only does the proposed model outperform existing models in power delivery, but also portrays unforeseen and startling characteristics during emission. These electromagnetically induced transparency like (EIT-like) and superscattering-like characteristics are reported here for a superradiant assembly, and the effects escalate as the emitters become increasingly disparate. The fact that the EIT-like characteristics are in close agreement with a recent experimental observation involving the superradiant decay of qubits strongly bolsters the validity of the proposed model.

  11. Diamond-based single-photon emitters

    International Nuclear Information System (INIS)

    Aharonovich, I; Castelletto, S; Simpson, D A; Su, C-H; Greentree, A D; Prawer, S

    2011-01-01

    The exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Sources of single photons are extremely important across many applications as they can serve as vectors for quantum information-thereby allowing long-range (perhaps even global-scale) quantum states to be made and manipulated for tasks such as quantum communication or distributed quantum computation. At the single-emitter level, quantum sources also afford new possibilities in terms of nanoscopy and bio-marking. Color centers in diamond are prominent candidates to generate and manipulate quantum states of light, as they are a photostable solid-state source of single photons at room temperature. In this review, we discuss the state of the art of diamond-based single-photon emitters and highlight their fabrication methodologies. We present the experimental techniques used to characterize the quantum emitters and discuss their photophysical properties. We outline a number of applications including quantum key distribution, bio-marking and sub-diffraction imaging, where diamond-based single emitters are playing a crucial role. We conclude with a discussion of the main challenges and perspectives for employing diamond emitters in quantum information processing.

  12. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  13. Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

    Science.gov (United States)

    Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

    2016-08-10

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

  14. Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Seok Hwan Jeong

    2018-03-01

    Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

  15. Facile Synthesis of In–Situ Nitrogenated Graphene Decorated by Few–Layer MoS2 for Hydrogen Evolution Reaction

    International Nuclear Information System (INIS)

    Dai, Xiaoping; Li, Zhanzhao; Du, Kangli; Sun, Hui; Yang, Ying; Zhang, Xin; Ma, Xingyu; Wang, Jie

    2015-01-01

    Graphical abstract: In–situ nitrogenated graphene–few layer MoS 2 composites are fabricated by combinating chemical and hydrothermal reduction. The resulting MoS 2 /N–rGO–HA by N 2 H 4 ·H 2 O and NH 3 ·H 2 O as co-reductant exhibits high activity and remarkable stability for hydrogen evolution reaction (HER). The excellent electro-catalytic performance is ascribed to the synergistic effects, confinement effects and highly dispersed MoS 2 nanosheets on N-doping rGO. Display Omitted -- Highlights: • In–situ nitrogenated graphene–few layer MoS 2 composites are fabricated by combinating chemical and hydrothermal co-reduction. • The resulting MoS 2 /N–rGO–HA exhibits high activity and remarkable stability for HER. • The excellent electro-catalytic performance is ascribed to the synergistic effects, confinement effects and highly dispersed MoS 2 nanosheets on N-doping rGO. -- Abstract: A facile one–step synthetic strategy by combinating chemical and hydrothermal reduction of graphene oxide and Mo precursor is proposed to fabricate in–situ nitrogenated graphene–few layer MoS 2 composite (MoS 2 /N–rGO–HA) for hydrogen evolution reaction (HER). The N–doping graphene nanosheets and highly dispersed MoS 2 nanosheets by ammonia and hydrozine as co–reductant have greatly promoted the N content, concentrations of pyridinic and graphitic N, the electron transport in electrodes, and assure high catalytic efficiency. The MoS 2 /N–rGO–HA composite exhibits extremely high activity in acidic solutions with a small onset potential of 100 mV and Tafel slope of 45 mV/dec, as well as a current density about 32.4 mA cm −2 at overpotential about 0.2 V. Moreover, such MoS 2 /N–rGO–HA electroncatalyst also shows an excellent stability during 1000 cycles with negligible loss of the cathodic current. This facile hydrothermal method could provide a promising strategy for the synthesis of in–situ nitrogen–doping graphene sheets and few

  16. Solid-state single-photon emitters

    Science.gov (United States)

    Aharonovich, Igor; Englund, Dirk; Toth, Milos

    2016-10-01

    Single-photon emitters play an important role in many leading quantum technologies. There is still no 'ideal' on-demand single-photon emitter, but a plethora of promising material systems have been developed, and several have transitioned from proof-of-concept to engineering efforts with steadily improving performance. Here, we review recent progress in the race towards true single-photon emitters required for a range of quantum information processing applications. We focus on solid-state systems including quantum dots, defects in solids, two-dimensional hosts and carbon nanotubes, as these are well positioned to benefit from recent breakthroughs in nanofabrication and materials growth techniques. We consider the main challenges and key advantages of each platform, with a focus on scalable on-chip integration and fabrication of identical sources on photonic circuits.

  17. Synthesis of MoS2-reduced graphene oxide/Fe3O4 nanocomposite for enhanced electromagnetic interference shielding effectiveness

    Science.gov (United States)

    Prasad, Jagdees; Singh, Ashwani Kumar; Shah, Jyoti; Kotnala, R. K.; Singh, Kedar

    2018-05-01

    This article presents a facile two step hydrothermal process for the synthesis of MoS2-reduced graphene oxide/Fe3O4 (MoS2-rGO/Fe3O4) nanocomposite and its application as an excellent electromagnetic interference shielding material. Characterization tools like; scanning electron microscope, transmission electron microscope, x-ray diffraction, and Raman spectroscopy were used to confirm the formation of nanocomposite and found that spherical Fe3O4 nanoparticles are well dispersed over MoS2-rGO composite with average particle size ∼25–30 nm was confirmed by TEM. Structural characterization done by XRD was found inconsistent with the known lattice parameter of MoS2 nanosheet, reduced graphene oxide and Fe3O4 nanoparticles. Electromagnetic shielding effectiveness of MoS2-rGO/Fe3O4 nanocomposite was evaluated and found to be an excellent EMI shielding material in X-band range (8.0–12.0 GHz). MoS2-rGO composite shows poor shielding capacity (SET ∼ 3.81 dB) in entire range as compared to MoS2-rGO/Fe3O4 nanocomposite (SET ∼ 8.27 dB). It is due to interfacial polarization in the presence of EM field. The result indicates that MoS2-rGO/Fe3O4 nanocomposite provide a new stage for the next generation in high-performance EM wave absorption and EMI shielding effectiveness.

  18. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

    Science.gov (United States)

    Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

    2016-06-28

    Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.

  19. Molecular interactions between single layered MoS2 and biological molecules† †Electronic supplementary information (ESI) available: SFG data analysis methods, spectral fitting parameters, additional spectra, CD spectrum, and details about MD simulation methods. See DOI: 10.1039/c7sc04884j

    Science.gov (United States)

    Xiao, Minyu; Wei, Shuai; Li, Yaoxin; Jasensky, Joshua; Chen, Junjie; Brooks, Charles L.

    2017-01-01

    Two-dimensional (2D) materials such as graphene, molybdenum disulfide (MoS2), tungsten diselenide (WSe2), and black phosphorous are being developed for sensing applications with excellent selectivity and high sensitivity. In such applications, 2D materials extensively interact with various analytes including biological molecules. Understanding the interfacial molecular interactions of 2D materials with various targets becomes increasingly important for the progression of better-performing 2D-material based sensors. In this research, molecular interactions between several de novo designed alpha-helical peptides and monolayer MoS2 have been studied. Molecular dynamics simulations were used to validate experimental data. The results suggest that, in contrast to peptide–graphene interactions, peptide aromatic residues do not interact strongly with the MoS2 surface. It is also found that charged amino acids are important for ensuring a standing-up pose for peptides interacting with MoS2. By performing site-specific mutations on the peptide, we could mediate the peptide–MoS2 interactions to control the peptide orientation on MoS2. PMID:29675220

  20. Beam envelope solution of a finite emittance beam including space charge and acceleration

    International Nuclear Information System (INIS)

    Larson, D.J.; Cole, F.T.; Mills, F.E.

    1985-01-01

    The intermediate-energy electron-cooling effort at the University of Wisconsin began as a collaboration with the University of California - Santa Barbara free electron laser group to measure the emittance of their test device. The measurement indicated that the optics of the FEL test device were extremely good; there was no emittance degradation throughout the system. For this reason, the electron gun for the electron-cooling effort has been designed to be optically identical to the UCSB gun designed by Hermannsfeldt of SLAC. The optics program used to investigate the gun behavior is EGUN, written by Hermannsfeldt. Because of the complicated problem of electron optics at the start of the Pelletron accelerating column, the first 120 kV of acceleration in the Pelletron is included in the gun optical study. At that point in the Pelletron, the electric field no longer has any significant radial component and the following optical treatment of the device is done

  1. MD2065: Emittance exchange with linear coupling

    CERN Document Server

    Carver, Lee Robert; Persson, Tobias Hakan Bjorn; Amorim, David; Levens, Tom; Pesah, Arthur Chalom; CERN. Geneva. ATS Department

    2018-01-01

    In order to better understand the luminosity imbalance between ATLAS and CMS that was observed in 2016, it was proposed to perform a test whereby the horizontal and vertical emittances are exchanged by crossing the tunes in the presence of linear coupling. The luminosity before and after the exchange could be compared to see if the imbalance stems purely from the uneven emittances or if there is an additional mechanism in play. However, due to limited machine availability only tests at injection were able to performed.

  2. Minimum emittance of three-bend achromats

    International Nuclear Information System (INIS)

    Li Xiaoyu; Xu Gang

    2012-01-01

    The calculation of the minimum emittance of three-bend achromats (TBAs) made by Mathematical software can ignore the actual magnets lattice in the matching condition of dispersion function in phase space. The minimum scaling factors of two kinds of widely used TBA lattices are obtained. Then the relationship between the lengths and the radii of the three dipoles in TBA is obtained and so is the minimum scaling factor, when the TBA lattice achieves its minimum emittance. The procedure of analysis and the results can be widely used in achromats lattices, because the calculation is not restricted by the actual lattice. (authors)

  3. Quadrupole Transfer Function for Emittance Measurement

    CERN Document Server

    Cameron, Peter; Jansson, Andreas; Tan, Cheng-Yang

    2008-01-01

    Historically the use of the quadrupole moment measurement has been impeded by the requirement for large dynamic range, as well as measurement sensitivity to beam position. We investigate the use of the transfer function technique [1-3] in combination with the sensitivity and 160dB revolution line rejection of the direct diode detection analog front end [4] to open the possibility of an emittance diagnostic that may be implemented without operational complication, quasi- parasitic to the operation of existing tune measurement systems. Such a diagnostic would be particularly useful as an emittance monitor during acceleration ramp development in machines like RHIC and the LHC.

  4. Studies of emittance growth in the ATF

    International Nuclear Information System (INIS)

    Zimmermann, F.

    1997-03-01

    Several different mechanisms of emittance growth in the Accelerator Test Facility (ATF) at KEK are investigated: the author calculates rise times of the fast beam-ion instability for the damping ring (DR), and discusses the emittance growth caused by coherent synchrotron radiation in the beam-transport line (BT), the effect of quadrupole wake fields in the injector linac, and, finally, a single-bunch head-tail ion effect that can occur in both the DR and the BT. A first attempt to measure the quadrupole wake on the real machine is also reported

  5. MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

    Science.gov (United States)

    He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

    2017-01-01

    2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Vertically aligned carbon nanotube emitter on metal foil for medical X-ray imaging.

    Science.gov (United States)

    Ryu, Je Hwang; Kim, Wan Sun; Lee, Seung Ho; Eom, Young Ju; Park, Hun Kuk; Park, Kyu Chang

    2013-10-01

    A simple method is proposed for growing vertically aligned carbon nanotubes on metal foil using the triode direct current plasma-enhanced chemical vapor deposition (PECVD). The carbon nanotube (CNT) electron emitter was fabricated using fewer process steps with an acid treated metal substrate. The CNT emitter was used for X-ray generation, and the X-ray image of mouse's joint was obtained with an anode current of 0.5 mA at an anode bias of 60 kV. The simple fabrication of a well-aligned CNT with a protection layer on metal foil, and its X-ray application, were studied.

  7. Field emitters with low turn on electric field based on carbon fibers

    International Nuclear Information System (INIS)

    Wang Qilong; Mu Hui; Zhang Xiaobing; Lei Wei; Wang Jinchan; Zhao Hongping

    2007-01-01

    Field emitters of vertical carbon fibers on a silicon substrate are fabricated by catalytic chemical vapor deposition. After an ageing process of 150 min, field emission measurement of the fibers is carried out in a vacuum chamber with a base pressure of 5.0 x 10 -4 Pa. The experimental results display that field emission performance of the carbon fibers depends strongly on the vacuum level during the experiments. After the field emission measurement, damage to the carbon fiber field emitters is observed from the scanning electron microscopic images

  8. Simulating Excitons in MoS2 with Time-Dependent Density Functional Theory

    Science.gov (United States)

    Flamant, Cedric; Kolesov, Grigory; Kaxiras, Efthimios

    Monolayer molybdenum disulfide, owing to its graphene-like two-dimensional geometry whilst still having a finite bandgap, is a material of great interest in condensed matter physics and for potential application in electronic devices. In particular, MoS2 exhibits significant excitonic effects, a desirable quality for fundamental many-body research. Time-dependent density functional theory (TD-DFT) allows us to simulate dynamical effects as well as temperature-based effects in a natural way given the direct treatment of the time evolution of the system. We present a TD-DFT study of monolayer MoS2 exciton dynamics, examining various qualitative and quantitative predictions in pure samples and in the presence of defects. In particular, we generate an absorption spectrum through simulated pulse excitation for comparison to experiment and also analyze the response of the exciton in an external electric field.In this work we also discuss the electronic structure of the exciton in MoS2 with and without vacancies.

  9. Magic Clusters of MoS2 by Edge S2 Interdimer Spacing Modulation.

    Science.gov (United States)

    Ryou, Junga; Kim, Yong-Sung

    2018-05-17

    Edge atomic and electronic structures of S-saturated Mo-edge triangular MoS 2 nanoclusters are investigated using density functional theory calculations. The edge electrons described by the S 2 -p x p x π* (S 2 -Π x ) and Mo-d xy orbitals are found to interplay to pin the S 2 -Π x Fermi wavenumber at k F = 2/5 as the nanocluster size increases, and correspondingly, the ×5 Peierls edge S 2 interdimer spacing modulation is induced. For the particular sizes of N = 5 n - 2 and 5 n, where N is the number of Mo atoms at one edge representing the nanocluster size and n is a positive integer, the effective ×5 interdimer spacing modulation stabilizes the nanoclusters, which are identified here to be the magic S-saturated Mo-edge triangular MoS 2 nanoclusters. With the S 2 -Π x Peierls gap, the MoS 2 nanoclusters become far-edge S 2 -Π x semiconducting and subedge Mo-d xy metallic as N → ∞.

  10. An evaluation of low-energy x-ray and cobalt-60 irradiations of MOS transistors

    International Nuclear Information System (INIS)

    Dozier, C.M.; Fleetwood, D.M.

    1987-01-01

    An evaluation of methodologies for irradiating MOS transistors with low-energy x-ray and Co-60 sources has been performed. The authors find that comparisons of voltage shifts produced by bulk trapped charge and interface states in MOS transistors irradiated using two different low energy x-ray sources (an ARACOR 10 keV W source and an 8 keV Cu source) agree to within better than 30 percent. This quality of agreement is similar in magnitude to that between MOS devices irradiated by different Co-60 sources. In contrast, the measurements indicate that interlaboratory comparisons of ratios of shifts produced by x-ray and Co-60 sources can lead to differences in ratios as large as a factor of --1.7. Improved electron-hole recombination data for oxides is presented. This recombination correction, in conjunction with a correction for interface dose enhancement, is used to predict the ratios of shifts produced by x-ray and Co-60 sources. However, the results show that corrections for electron-hole recombination and interface does enhancement do not, by themselves, adequately predict the field dependent behavior of these transistors

  11. Integrated circuits and logic operations based on single-layer MoS2.

    Science.gov (United States)

    Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras

    2011-12-27

    Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

  12. Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

    Directory of Open Access Journals (Sweden)

    Gaspar Casados-Cruz

    2010-11-01

    Full Text Available Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

  13. Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

    Science.gov (United States)

    Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

    2013-09-09

    Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Fabrication of multilayered-sandwich MoS2/c architectures with advanced lithium storage properties

    International Nuclear Information System (INIS)

    Du, Jinlong; Yang, Zhanxu; Wang, Xiaorong; Qi, Chengyuan; Li, Yue; Mao, Wei; Qiao, Haiyan; Yu, ZongBao; Ren, Tieqiang; Qiao, Qingdong

    2017-01-01

    MoS 2 /C nanocomposite with a multilayered sandwich structure based on few-layered MoS 2 and carbon layers in an alternating sequence, was successfully synthesized through a one-step synchronized carbonization and sulfuration method. The hybrids were characterized by X-ray diffraction, High-resolution transmission electron microscopy, Atomic force microscope, Raman and X-ray photoelectron spectroscopic methods. The as-obtained MoS 2 /C nanocomposite applied as lithium-ion batteries anode materials, showed a high initial discharge and charge capacities of 1678.5 and 1386.0 mAh g −1 , respectively. High specific reversible capacity is maintained at fast C rates, e.g., 1390, 1223, 1017, 566, and 450 mAh g −1 at 0.1C, 0.6C, 3C, 10C and 20C, respectively. The good performance of the composite is mainly attributed to the unique few layered composite architectures, which can improve ion/electron transportation and prevent aggregation and restacking during the lithiation/delithiation process.

  15. Possible doping strategies for MoS 2 monolayers: An ab initio study

    KAUST Repository

    Dolui, Kapildeb; Rungger, Ivan; Das Pemmaraju, Chaitanya; Sanvito, Stefano

    2013-01-01

    Density functional theory is used to systematically study the electronic properties of doped MoS2 monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS2 conduction band, making the system n type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species. © 2013 American Physical Society.

  16. Soft-type trap-induced degradation of MoS2 field effect transistors

    Science.gov (United States)

    Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

    2018-06-01

    The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

  17. Possible doping strategies for MoS 2 monolayers: An ab initio study

    KAUST Repository

    Dolui, Kapildeb

    2013-08-14

    Density functional theory is used to systematically study the electronic properties of doped MoS2 monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS2 conduction band, making the system n type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species. © 2013 American Physical Society.

  18. Synthesis and structural determination of twisted MoS2 nanotubes

    International Nuclear Information System (INIS)

    Santiago, P.; Schabes-Retchkiman, P.; Ascencio, J.A.; Mendoza, D.; Perez-Alvarez, M.; Espinosa, A.; Reza-SanGerman, C.; Camacho-Bragado, G.A.; Jose-Yacaman, M.

    2004-01-01

    In the present work we report the synthesis of MoS 2 nanotubes with diameters greater than 10 nm using a template method. The length and properties of these nanotubes are a direct result of the preparation method. High-resolution transmission electron microscopy is used to study the structure of these highly curved entities. Molecular dynamics simulations of MoS 2 nanotubes reveal that one of the stable forms of the nanotubes is a twisted one. The twisting of the nanotubes produces a characteristic contrast in the images, which is also studied using simulation methods. The analysis of the local contrast close to the perpendicular orientation shows geometrical arrays of dots in domain-like structures, which are demonstrated to be a product of the atomic overlapping of irregular curvatures in the nanotubes. The configuration of some of the experimentally obtained nanotubes is demonstrated to be twisted with a behavior suggesting partial plasticity. (orig.)

  19. Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering

    KAUST Repository

    Liu, Hsiang Lin; Guo, Huaihong; Yang, Teng; Zhang, Zhidong; Kumamoto, Yasuaki; Shen, Chih Chiang; Hsu, Yu Te; Li, Lain-Jong; Saito, Riichiro; Kawata, Satoshi

    2015-01-01

    We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.

  20. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik

    1996-01-01

    A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper, a sys...