WorldWideScience

Sample records for monolithic semiconductor ring

  1. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

  2. Monolithic optofluidic ring resonator lasers created by femtosecond laser nanofabrication.

    Science.gov (United States)

    Chandrahalim, Hengky; Chen, Qiushu; Said, Ali A; Dugan, Mark; Fan, Xudong

    2015-05-21

    We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ mm(-2). Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 10(4), which is limited by both solvent absorption and scattering loss. In particular, a Q-factor resulting from the scattering loss can be as high as 4.2 × 10(4), suggesting the feasibility of using a femtosecond laser to create high quality optical cavities.

  3. Monolithic integration of microfluidic channels and semiconductor lasers

    Science.gov (United States)

    Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

    2006-08-01

    We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

  4. Deep-red semiconductor monolithic mode-locked lasers

    International Nuclear Information System (INIS)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-01-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

  5. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  6. Specific heat in diluted magnetic semiconductor quantum ring

    Science.gov (United States)

    Babanlı, A. M.; Ibragimov, B. G.

    2017-11-01

    In the present paper, we have calculated the specific heat and magnetization of a quantum ring of a diluted magnetic semiconductor (DMS) material in the presence of magnetic field. We take into account the effect of Rashba spin-orbital interaction, the exchange interaction and the Zeeman term on the specific heat. We have calculated the energy spectrum of the electrons in diluted magnetic semiconductor quantum ring. Moreover we have calculated the specific heat dependency on the magnetic field and Mn concentration at finite temperature of a diluted magnetic semiconductor quantum ring.

  7. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  8. Order-disorder transition in nanoscopic semiconductor quantum rings

    NARCIS (Netherlands)

    Borrmann, P.; Harting, J.D.R.

    2001-01-01

    Using the path integral Monte Carlo technique we show that semiconductor quantum rings with up to six electrons exhibit a temperature, ring diameter, and particle number dependent transition between spin ordered and disordered Wigner crystals. Because of the small number of particles the transition

  9. Inherent polarization entanglement generated from a monolithic semiconductor chip

    DEFF Research Database (Denmark)

    Horn, Rolf T.; Kolenderski, Piotr; Kang, Dongpeng

    2013-01-01

    Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built...... a photonic device primitive called a Bragg reflection waveguide (BRW). Implemented in gallium arsenide, we show that, via the process of spontaneous parametric down conversion, the BRW is capable of directly producing polarization entangled photons without additional path difference compensation, spectral...... as a serious contender on which to build large scale implementations of optical quantum processing devices....

  10. Propagation and collision of soliton rings in quantum semiconductor plasmas

    International Nuclear Information System (INIS)

    El-Shamy, E.F.; Gohman, F.S.

    2014-01-01

    The intrinsic localization of electrostatic wave energies in quantum semiconductor plasmas can be described by solitary pulses. The collision properties of these pulses are investigated. In the present study, the fundamental model includes the quantum term, degenerate pressure of the plasma species, and the electron/hole exchange–correlation effects. In cylindrical geometry, using the extended Poincaré–Lighthill–Kuo (PLK) method, the Korteweg–de Vries (KdV) equations and the analytical phase shifts after the collision of two soliton rings are derived. Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. In addition, the degenerate pressure terms of electrons and holes have strong impact on the phase shift. The present theory may be useful to analyze the collision of localized coherent electrostatic waves in quantum semiconductor plasmas. - Highlights: • The propagation and the collision of pulses in quantum semiconductor plasmas are studied. • Numerical calculations reveal that pulses may exist only in dark soliton rings for electron–hole quantum plasmas. • Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. • It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. • The degenerate pressure terms of electrons and holes have strong impact on the phase shift

  11. Spin transitions in semiconductor quantum rings

    International Nuclear Information System (INIS)

    Baxevanis, Benjamin; Pfannkuche, Daniela

    2010-01-01

    We adopt the path integral Monte Carlo method to accurately resolve the total spin of the ground state of electrons confined in a quantum ring with different geometries. Using this method, an evaluation of the ground state of three electrons in a ring shows a spin transition to the fully polarized state by increasing the radius and thereby enhancing the Coulomb interaction. The total spin of the ground state is determined by the mutual interplay of confinement and electron-electron interaction. An analysis of the four-electron ring demonstrates that in this case no spin transitions take place. Furthermore, the effect of geometric distortion of the ring on its ground state has been investigated. Elliptically deforming the ring breaks the symmetry of the system and leads to the removal of orbital degeneracy. For strong distortion the splitting between hybridized states is sufficient to overcome the exchange-energy saving associated with a higher spin state. We have found that this effect removes the polarization of three electrons. Even in a four-electron ring the ground state is forced by the distortion to be unpolarized and thus suppressing the Hund's rule ground state.

  12. Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

    Science.gov (United States)

    Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

    2018-01-31

    Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

  13. Semiconductor ring lasers coupled by a single waveguide

    Science.gov (United States)

    Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

    2012-06-01

    We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

  14. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  15. Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

    2012-06-01

    State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

  16. Hartman effect in a Kane-type semiconductor quantum ring

    International Nuclear Information System (INIS)

    Cakmaktepe, S

    2007-01-01

    The Hartman effect for a tunnelling particle implies that group delay time is independent of the opaque barrier width. In the present study, the tunnelling delay time in the transmission mode is studied taking into account the real band structure of an InSb-type semiconductor quantum ring and compared with that of a parabolic band structure. The system considered in this study consists of a circular loop in the presence of Aharonov-Bohm flux. It is shown that while tunnelling through an opaque barrier, the group delay time for a given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux

  17. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  18. Preparation of polyhedral oligomeric silsesquioxane based hybrid monoliths by ring-opening polymerization for capillary LC and CEC.

    Science.gov (United States)

    Lin, Hui; Zhang, Zhenbin; Dong, Jing; Liu, Zhongshan; Ou, Junjie; Zou, Hanfa

    2013-09-01

    A new organic-inorganic hybrid monolith was prepared by the ring-opening polymerization of octaglycidyldimethylsilyl polyhedral oligomeric silsesquioxane (POSS) with 1,4-butanediamine (BDA) using 1-propanol, 1,4-butanediol, and PEG 10,000 as a porogenic system. Benefiting from the moderate phase separation process, the resulting poly(POSS-co-BDA) hybrid monolith possessed a uniform microstructure and exhibited excellent performance in chromatographic applications. Neutral, acidic, and basic compounds were successfully separated on the hybrid monolith in capillary LC (cLC), and high column efficiencies were achieved in all of the separations. In addition, as the amino groups could generate a strong EOF, the hybrid monolith was also applied in CEC for the separation of neutral and polar compounds, and a satisfactory performance was obtained. These results demonstrate that the poly(POSS-co-BDA) hybrid monolith is a good separation media in chromatographic separations of various types of compounds by both cLC and CEC. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

    Science.gov (United States)

    Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

    1991-01-01

    A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

  20. Interband magneto-optical transitions in a layer of semiconductor nano-rings

    NARCIS (Netherlands)

    Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

    2005-01-01

    We have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We

  1. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  2. Control of the spin geometric phase in semiconductor quantum rings.

    Science.gov (United States)

    Nagasawa, Fumiya; Frustaglia, Diego; Saarikoski, Henri; Richter, Klaus; Nitta, Junsaku

    2013-01-01

    Since the formulation of the geometric phase by Berry, its relevance has been demonstrated in a large variety of physical systems. However, a geometric phase of the most fundamental spin-1/2 system, the electron spin, has not been observed directly and controlled independently from dynamical phases. Here we report experimental evidence on the manipulation of an electron spin through a purely geometric effect in an InGaAs-based quantum ring with Rashba spin-orbit coupling. By applying an in-plane magnetic field, a phase shift of the Aharonov-Casher interference pattern towards the small spin-orbit-coupling regions is observed. A perturbation theory for a one-dimensional Rashba ring under small in-plane fields reveals that the phase shift originates exclusively from the modulation of a pure geometric-phase component of the electron spin beyond the adiabatic limit, independently from dynamical phases. The phase shift is well reproduced by implementing two independent approaches, that is, perturbation theory and non-perturbative transport simulations.

  3. Spin relaxation in semiconductor quantum rings and dots--a comparative study.

    Science.gov (United States)

    Zipper, Elżbieta; Kurpas, Marcin; Sadowski, Janusz; Maśka, Maciej M

    2011-03-23

    We calculate spin relaxation times due to spin-orbit-mediated electron-phonon interactions for experimentally accessible semiconductor quantum ring and dot architectures. We elucidate the differences between the two systems due to different confinement. The estimated relaxation times (at B = 1 T) are in the range between a few milliseconds to a few seconds. This high stability of spin in a quantum ring allows us to test it as a spin qubit. A brief discussion of quantum state manipulations with such a qubit is presented.

  4. The observation of the Aharonov-Bohm effect in suspended semiconductor ring interferometers

    Science.gov (United States)

    Pokhabov, D. A.; Pogosov, A. G.; Shevyrin, A. A.; Zhdanov, E. Yu; Bakarov, A. K.; Shklyaev, A. A.; Ishutkin, S. V.; Stepanenko, M. V.; Shesterikov, E. V.

    2018-02-01

    A suspended semiconductor quantum ring interferometer based on a GaAs/AlGaAs heterostructure with a two-dimensional electron gas (2DEG) is created and experimentally studied. The electron interference in suspended 2DEG is observed. The interference manifests itself as the Aharonov-Bohm oscillations of the interferometer magnetoresistance, clearly observed before as well as after suspension. The amplitude of the oscillations remains almost unchanged after suspension.

  5. Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

    International Nuclear Information System (INIS)

    Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

    2013-01-01

    We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

  6. Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.

    Science.gov (United States)

    Zhu, Zhen-Gang; Berakdar, Jamal

    2009-04-08

    We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.

  7. The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

    Science.gov (United States)

    Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

    2011-01-01

    Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

  8. Effect of electric field on the oscillator strength and cross-section for intersubband transition in a semiconductor quantum ring

    International Nuclear Information System (INIS)

    Bhattacharyya, S; Das, N R

    2012-01-01

    In this paper, we study the oscillator strength and cross-section for intersubband optical transition in an n-type semiconductor quantum ring of cylindrical symmetry in the presence of an electric field perpendicular to the plane of the ring. The analysis is done considering Kane-type band non-parabolicity of the semiconductor and assuming that the polarization of the incident radiation is along the axis of the ring. The results show that the oscillator strength decreases and the transition energy increases with the electric field. The assumption of a parabolic band leads to an overestimation of the oscillator strength. The effects of the electric field, band non-parabolicity and relaxation time on absorption cross-section for intersubband transition in a semiconductor quantum ring are also shown. (paper)

  9. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  10. Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

    International Nuclear Information System (INIS)

    Betancourt-Riera, Re.; Betancourt-Riera, Ri.; Nieto Jalil, J. M.; Riera, R.

    2015-01-01

    We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al 0.35 Ga 0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted. (paper)

  11. Chromatographic assessment of two hybrid monoliths prepared via epoxy-amine ring-opening polymerization and methacrylate-based free radical polymerization using methacrylate epoxy cyclosiloxane as functional monomer.

    Science.gov (United States)

    Wang, Hongwei; Ou, Junjie; Lin, Hui; Liu, Zhongshan; Huang, Guang; Dong, Jing; Zou, Hanfa

    2014-11-07

    Two kinds of hybrid monolithic columns were prepared by using methacrylate epoxy cyclosiloxane (epoxy-MA) as functional monomer, containing three epoxy moieties and one methacrylate group. One column was in situ fabricated by ring-opening polymerization of epoxy-MA and 1,10-diaminodecane (DAD) using a porogenic system consisting of isopropanol (IPA), H2O and ethanol at 65°C for 12h. The other was prepared by free radical polymerization of epoxy-MA and ethylene dimethacrylate (EDMA) using 1-propanol and 1,4-butanediol as the porogenic solvents at 60°C for 12h. Two hybrid monoliths were investigated on the morphology and chromatographic assessment. Although two kinds of monolithic columns were prepared with epoxy-MA, their morphologies looked rather different. It could be found that the epoxy-MA-DAD monolith possessed higher column efficiencies (25,000-34,000plates/m) for the separation of alkylbenzenes than the epoxy-MA-EDMA monolith (12,000-13,000plates/m) in reversed-phase nano-liquid chromatography (nano-LC). Depending on the remaining epoxy or methacrylate groups on the surface of two pristine monoliths, the epoxy-MA-EDMA monolith could be easily modified with 1-octadecylamine (ODA) via ring-opening reaction, while the epoxy-MA-DAD monolith could be modified with stearyl methacrylate (SMA) via free radical reaction. The chromatographic performance for the separation of alkylbenzenes on SMA-modified epoxy-MA-DAD monolith was remarkably improved (42,000-54,000 plates/m) when compared with that on pristine epoxy-MA-DAD monolith, while it was not obviously enhanced on ODA-modified epoxy-MA-EDMA monolith when compared with that on pristine epoxy-MA-EDMA monolith. The enhancement of the column efficiency of epoxy-MA-DAD monolith after modification might be ascribed to the decreased mass-transfer resistence. The two kinds of hybrid monoliths were also applied for separations of six phenols and seven basic compounds in nano-LC. Copyright © 2014 Elsevier B.V. All

  12. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Science.gov (United States)

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  13. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

    Science.gov (United States)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

    2015-03-01

    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  14. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  15. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  16. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    International Nuclear Information System (INIS)

    Passmann, Regina

    2008-01-01

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  17. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  18. A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers

    Science.gov (United States)

    Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun

    2018-03-01

    In this paper, a novel image encryption algorithm based on synchronization of physical random bit generated in a cascade-coupled semiconductor ring lasers (CCSRL) system is proposed, and the security analysis is performed. In both transmitter and receiver parts, the CCSRL system is a master-slave configuration consisting of a master semiconductor ring laser (M-SRL) with cross-feedback and a solitary SRL (S-SRL). The proposed image encryption algorithm includes image preprocessing based on conventional chaotic maps, pixel confusion based on control matrix extracted from physical random bit, and pixel diffusion based on random bit stream extracted from physical random bit. Firstly, the preprocessing method is used to eliminate the correlation between adjacent pixels. Secondly, physical random bit with verified randomness is generated based on chaos in the CCSRL system, and is used to simultaneously generate the control matrix and random bit stream. Finally, the control matrix and random bit stream are used for the encryption algorithm in order to change the position and the values of pixels, respectively. Simulation results and security analysis demonstrate that the proposed algorithm is effective and able to resist various typical attacks, and thus is an excellent candidate for secure image communication application.

  19. Quantum interference of ballistic carriers in one-dimensional semiconductor rings

    International Nuclear Information System (INIS)

    Bagraev, N.T.; Buravlev, A.D.; Klyachkin, L.E.; Malyarenko, A.M.; Ivanov, V.K.; Rykov, S.A.; Shelykh, I.A.

    2000-01-01

    Quantum interference of ballistic carriers has been studied for the first time, using one-dimensional rings formed by quantum wire pairs in self-assembled silicon quantum wells. Energy dependencies of the transmission coefficient is calculated as a function of the length and modulation of the quantum wire pairs separated by a unified drain-source system or the quantum point contacts. The quantum conductance is predicted to be increased by a factor of four using the unified drain-source system as a result of the quantum interference. Theoretical dependencies are revealed by the quantum conductance oscillations created by the deviations of both the drain-source voltage and external magnetic field inside the silicon one-dimensional rings. The results obtained put forward a basis to create the Aharonov-Bohm interferometer using the silicon one-dimensional ring [ru

  20. Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects

    Science.gov (United States)

    Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.

    2016-10-01

    The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.

  1. Mode-Locked 1.5 um Semiconductor Optical Fiber Ring

    DEFF Research Database (Denmark)

    Pedersen, Niels Vagn; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product = 0.7) 1.5 um 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental r...

  2. Electronic and excitonic properties of self-assembled semiconductor quantum rings

    NARCIS (Netherlands)

    Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Blokland, J.H.; Christianen, P.C.M.; Maan, J.C.; Taboada, A.G.; Granados, D.; Garcia, J.M.; Kleemans, N.A.J.M.; Genuchten, van H.C.M.; Bozkurt, M.; Koenraad, P.M.; Wixforth, A.; Lorke, A.

    2009-01-01

    Theoretical analysis of the electron energy spectrum and the magnetization in a strained InxGa1-xAs/GaAs selfassembled quantum ring (SAQR) is performed using realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization. The Aharonov-Bohm oscillations in

  3. Monolithic spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Rajic, Slobodan (Knoxville, TN); Egert, Charles M. (Oak Ridge, TN); Kahl, William K. (Knoxville, TN); Snyder, Jr., William B. (Knoxville, TN); Evans, III, Boyd M. (Oak Ridge, TN); Marlar, Troy A. (Knoxville, TN); Cunningham, Joseph P. (Oak Ridge, TN)

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  4. Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    DEFF Research Database (Denmark)

    Pedersen, Niels V.; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product=0.7) 1.5 μm 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...... results agree well with the simulation results obtained using a transmission line laser model (TLLM) model, Both experiments and numerical simulations show how the RF power and the detuning affect the pulsewidth...

  5. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic......Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  6. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    International Nuclear Information System (INIS)

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-01-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

  7. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    Science.gov (United States)

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-05-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

  8. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    International Nuclear Information System (INIS)

    Takano, H.; Hosogi, K.; Kato, T.

    1995-01-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

  9. Two-dimensional inorganic–organic hybrid semiconductors composed of double-layered ZnS and monoamines with aromatic and heterocyclic aliphatic rings: Syntheses, structures, and properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Sujing; Li, Jing, E-mail: jingli@rutgers.edu

    2015-04-15

    As an addition to the II–VI based inorganic–organic hybrid semiconductor family, five new two-dimensional (2D) double-layered structures have been synthesized employing monoamines with different aromatic or heterocyclic aliphatic rings. Zn{sub 2}S{sub 2}(bza) (1), Zn{sub 2}S{sub 2}(mbza) (2), Zn{sub 2}S{sub 2}(fbza) (3), Zn{sub 2}S{sub 2}(pca) (4), and Zn{sub 2}S{sub 2}(thfa) (5) (bza=benzylamine, mbza=4-methoxybenzylamine, fbza=4-flurobenzylamine, pca=3-picolylamine, and thfa=tetrahydrofurfurylamine) are prepared by solvothermal reactions and characterized by different analytical methods, including powder X-ray diffraction, optical diffuse reflection, thermogravimetric analysis and photoluminescence spectroscopy. The powder X-ray diffraction patterns show that all five compounds adopt 2D double-layered structures. Optical diffuse reflectance spectra of these compounds suggest that they have notably lower band gaps than those of the similar compounds composed of aliphatic alkyl amines. Their photoluminescence properties and thermal stability are also analyzed. - Graphical abstract: Five new members of two-dimensional double-layered 2D-Zn{sub 2}S{sub 2}(L) (L=Ligand) structures employing monoamines with different aromatic or heterocyclic aliphatic rings have been designed, synthesized, and characterized. - Highlights: • A new sub-family of II-VI based hybrid semiconductors are designed, synthesized, and structurally characterized using amines with aromatic or aliphatic cyclic rings. • These compounds have notably lower band gaps than those made of aliphatic alkyl amines, greatly broadening the range of band gaps of this material family. • They emit strongly with systematically tunable emission intensity and energy.

  10. Two-dimensional inorganic–organic hybrid semiconductors composed of double-layered ZnS and monoamines with aromatic and heterocyclic aliphatic rings: Syntheses, structures, and properties

    International Nuclear Information System (INIS)

    Wang, Sujing; Li, Jing

    2015-01-01

    As an addition to the II–VI based inorganic–organic hybrid semiconductor family, five new two-dimensional (2D) double-layered structures have been synthesized employing monoamines with different aromatic or heterocyclic aliphatic rings. Zn 2 S 2 (bza) (1), Zn 2 S 2 (mbza) (2), Zn 2 S 2 (fbza) (3), Zn 2 S 2 (pca) (4), and Zn 2 S 2 (thfa) (5) (bza=benzylamine, mbza=4-methoxybenzylamine, fbza=4-flurobenzylamine, pca=3-picolylamine, and thfa=tetrahydrofurfurylamine) are prepared by solvothermal reactions and characterized by different analytical methods, including powder X-ray diffraction, optical diffuse reflection, thermogravimetric analysis and photoluminescence spectroscopy. The powder X-ray diffraction patterns show that all five compounds adopt 2D double-layered structures. Optical diffuse reflectance spectra of these compounds suggest that they have notably lower band gaps than those of the similar compounds composed of aliphatic alkyl amines. Their photoluminescence properties and thermal stability are also analyzed. - Graphical abstract: Five new members of two-dimensional double-layered 2D-Zn 2 S 2 (L) (L=Ligand) structures employing monoamines with different aromatic or heterocyclic aliphatic rings have been designed, synthesized, and characterized. - Highlights: • A new sub-family of II-VI based hybrid semiconductors are designed, synthesized, and structurally characterized using amines with aromatic or aliphatic cyclic rings. • These compounds have notably lower band gaps than those made of aliphatic alkyl amines, greatly broadening the range of band gaps of this material family. • They emit strongly with systematically tunable emission intensity and energy

  11. Methacrylate monolithic columns functionalized with epinephrine for capillary electrochromatography applications.

    Science.gov (United States)

    Carrasco-Correa, Enrique Javier; Ramis-Ramos, Guillermo; Herrero-Martínez, José Manuel

    2013-07-12

    Epinephrine-bonded polymeric monoliths for capillary electrochromatography (CEC) were developed by nucleophilic substitution reaction of epoxide groups of poly(glycidyl-methacrylate-co-ethylenedimethacrylate) (poly(GMA-co-EDMA)) monoliths using epinephrine as nucleophilic reagent. The ring opening reaction under dynamic conditions was optimized. Successful chemical modification of the monolith surface was ascertained by in situ Raman spectroscopy characterization. In addition, the amount of epinephrine groups that was bound to the monolith surface was evaluated by oxidation of the catechol groups with Ce(IV), followed by spectrophotometric measurement of unreacted Ce(IV). About 9% of all theoretical epoxide groups of the parent monolith were bonded to epinephrine. The chromatographic behavior of the epinephrine-bonded monolith in CEC conditions was assessed with test mixtures of alkyl benzenes, aniline derivatives and substituted phenols. In comparison to the poly(GMA-co-EDMA) monoliths, the epinephrine-bonded monoliths exhibited a much higher retention and slight differences in selectivity. The epinephrine-bonded monolith was further modified by oxidation with a Ce(IV) solution and compared with the epinephrine-bonded monoliths. The resulting monolithic stationary phases were evaluated in terms of reproducibility, giving RSD values below 9% in the parameters investigated. Copyright © 2013 Elsevier B.V. All rights reserved.

  12. Monoliths in Bioprocess Technology

    Directory of Open Access Journals (Sweden)

    Vignesh Rajamanickam

    2015-04-01

    Full Text Available Monolithic columns are a special type of chromatography column, which can be used for the purification of different biomolecules. They have become popular due to their high mass transfer properties and short purification times. Several articles have already discussed monolith manufacturing, as well as monolith characteristics. In contrast, this review focuses on the applied aspect of monoliths and discusses the most relevant biomolecules that can be successfully purified by them. We describe success stories for viruses, nucleic acids and proteins and compare them to conventional purification methods. Furthermore, the advantages of monolithic columns over particle-based resins, as well as the limitations of monoliths are discussed. With a compilation of commercially available monolithic columns, this review aims at serving as a ‘yellow pages’ for bioprocess engineers who face the challenge of purifying a certain biomolecule using monoliths.

  13. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications

    International Nuclear Information System (INIS)

    Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 10 5 , −1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on–off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of −17 and −15.2 dBm at a bit error rate of 10 −9 , respectively. (paper)

  14. Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

    Science.gov (United States)

    Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

    2018-02-01

    This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

  15. Monolithic exploding foil initiator

    Science.gov (United States)

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  16. Ring-opening metathesis polymerization based pore-size-selective functionalization of glycidyl methacrylate based monolithic media: access to size-stable nanoparticles for ligand-free metal catalysis.

    Science.gov (United States)

    Bandari, Rajendar; Höche, Thomas; Prager, Andrea; Dirnberger, Klaus; Buchmeiser, Michael R

    2010-04-19

    Monolithic polymeric supports have been prepared by electron-beam-triggered free-radical polymerization using a mixture of glycidyl methacrylate and trimethylolpropane triacrylate in 2-propanol, 1-dodecanol, and toluene. Under appropriate conditions, phase separation occurred, which resulted in the formation of a porous monolithic matrix that was characterized by large (convective) pores in the 30 μm range as well as pores of 7 nm were hydrolyzed by using poly(styrenesulfonic acid) (Mw = 69,400 g mol(-1), PDI=2.4). The remaining epoxy groups inside pores of nanoparticles 2 nm in diameter were formed. The palladium-nanoparticle-loaded monoliths were used in both Heck- and Suzuki-type coupling reactions achieving turnover numbers of up to 167,000 and 63,000, respectively. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Monolithic microwave integrated circuit with integral array antenna

    International Nuclear Information System (INIS)

    Stockton, R.J.; Munson, R.E.

    1984-01-01

    A monolithic microwave integrated circuit including an integral array antenna. The system includes radiating elements, feed network, phasing network, active and/or passive semiconductor devices, digital logic interface circuits and a microcomputer controller simultaneously incorporated on a single substrate by means of a controlled fabrication process sequence

  18. Influence of different carbon monolith preparation parameters on pesticide adsorption

    Directory of Open Access Journals (Sweden)

    Vukčević Marija

    2013-01-01

    Full Text Available The capacity of carbon monolith for pesticide removal from water, and the mechanism of pesticide interaction with carbon surface were examined. Different carbon monolith samples were obtained by varying the carbonization and activation parameters. In order to examine the role of surface oxygen groups in pesticide adsorption, carbon monolith surface was functionalized by chemical treatment in HNO3, H2O2 and KOH. The surface properties of the obtained samples were investigated by BET surface area, pore size distribution and temperature-programmed desorption. Adsorption of pesticides from aqueous solution onto activated carbon monolith samples was studied by using five pesticides belonging to different chemical groups (acetamiprid, dimethoate, nicosulfuron, carbofuran and atrazine. Presented results show that higher temperature of carbonization and the amount of activating agent allow obtaining microporous carbon monolith with higher amount of surface functional groups. Adsorption properties of the activated carbon monolith were more readily affected by the amount of the surface functional groups than by specific surface area. Results obtained by carbon monolith functionalisation showed that π-π interactions were the main force for adsorption of pesticides with aromatic structure, while acidic groups play an important role in adsorption of pesticides with no aromatic ring in the chemical structure.

  19. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  20. Fibrous monolithic ceramics

    International Nuclear Information System (INIS)

    Kovar, D.; King, B.H.; Trice, R.W.; Halloran, J.W.

    1997-01-01

    Fibrous monolithic ceramics are an example of a laminate in which a controlled, three-dimensional structure has been introduced on a submillimeter scale. This unique structure allows this all-ceramic material to fail in a nonbrittle manner. Materials have been fabricated and tested with a variety of architectures. The influence on mechanical properties at room temperature and at high temperature of the structure of the constituent phases and the architecture in which they are arranged are discussed. The elastic properties of these materials can be effectively predicted using existing models. These models also can be extended to predict the strength of fibrous monoliths with an arbitrary orientation and architecture. However, the mechanisms that govern the energy absorption capacity of fibrous monoliths are unique, and experimental results do not follow existing models. Energy dissipation occurs through two dominant mechanisms--delamination of the weak interphases and then frictional sliding after cracking occurs. The properties of the constituent phases that maximize energy absorption are discussed. In this article, the authors examine the structure of Si 3 N 4 -BN fibrous monoliths from the submillimeter scale of the crack-deflecting cell-cell boundary features to the nanometer scale of the BN cell boundaries

  1. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Directory of Open Access Journals (Sweden)

    Cheng Chuantong

    2017-07-01

    Full Text Available Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  2. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    Science.gov (United States)

    Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

    2017-07-01

    Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  3. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  4. Thermal measurement a requirement for monolithic microwave integrated circuit design

    OpenAIRE

    Hopper, Richard; Oxley, C. H.

    2008-01-01

    The thermal management of structures such as Monolithic Microwave Integrated Circuits (MMICs) is important, given increased circuit packing densities and RF output powers. The paper will describe the IR measurement technology necessary to obtain accurate temperature profiles on the surface of semiconductor devices. The measurement procedure will be explained, including the device mounting arrangement and emissivity correction technique. The paper will show how the measurement technique has be...

  5. Monolith electroplating process

    Science.gov (United States)

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  6. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin

    2004-01-01

    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  7. Hyperentangled photon sources in semiconductor waveguides

    DEFF Research Database (Denmark)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  8. Porous polymer monolithic col

    Directory of Open Access Journals (Sweden)

    Lydia Terborg

    2015-05-01

    Full Text Available A new approach has been developed for the preparation of mixed-mode stationary phases to separate proteins. The pore surface of monolithic poly(glycidyl methacrylate-co-ethylene dimethacrylate capillary columns was functionalized with thiols and coated with gold nanoparticles. The final mixed mode surface chemistry was formed by attaching, in a single step, alkanethiols, mercaptoalkanoic acids, and their mixtures on the free surface of attached gold nanoparticles. Use of these mixtures allowed fine tuning of the hydrophobic/hydrophilic balance. The amount of attached gold nanoparticles according to thermal gravimetric analysis was 44.8 wt.%. This value together with results of frontal elution enabled calculation of surface coverage with the alkanethiol and mercaptoalkanoic acid ligands. Interestingly, alkanethiols coverage in a range of 4.46–4.51 molecules/nm2 significantly exceeded that of mercaptoalkanoic acids with 2.39–2.45 molecules/nm2. The mixed mode character of these monolithic stationary phases was for the first time demonstrated in the separations of proteins that could be achieved in the same column using gradient elution conditions typical of reverse phase (using gradient of acetonitrile in water and ion exchange chromatographic modes (applying gradient of salt in water, respectively.

  9. Ring Theory

    CERN Document Server

    Jara, Pascual; Torrecillas, Blas

    1988-01-01

    The papers in this proceedings volume are selected research papers in different areas of ring theory, including graded rings, differential operator rings, K-theory of noetherian rings, torsion theory, regular rings, cohomology of algebras, local cohomology of noncommutative rings. The book will be important for mathematicians active in research in ring theory.

  10. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  11. Physics of quantum rings

    International Nuclear Information System (INIS)

    Fomin, Vladimir M.

    2014-01-01

    Presents the new class of materials of quantum rings. Provides an elemental basis for low-cost high-performance devices promising for electronics, optoelectronics, spintronics and quantum information processing. Explains the physical properties of quantum rings to cover a gap in scientific literature. Presents the application of most advanced nanoengineering and nanocharacterization techniques. This book deals with a new class of materials, quantum rings. Innovative recent advances in experimental and theoretical physics of quantum rings are based on the most advanced state-of-the-art fabrication and characterization techniques as well as theoretical methods. The experimental efforts allow to obtain a new class of semiconductor quantum rings formed by capping self-organized quantum dots grown by molecular beam epitaxy. Novel optical and magnetic properties of quantum rings are associated with non-trivial topologies at the nanoscale. An adequate characterization of quantum rings is possible on the basis of modern characterization methods of nanostructures, such as Scanning Tunneling Microscopy. A high level of complexity is demonstrated to be needed for a dedicated theoretical model to adequately represent the specific features of quantum rings. The findings presented in this book contribute to develop low-cost high-performance electronic, spintronic, optoelectronic and information processing devices based on quantum rings.

  12. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  13. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  14. Temperature Characteristics of Monolithically Integrated Wavelength-Selectable Light Sources

    International Nuclear Information System (INIS)

    Han Liang-Shun; Zhu Hong-Liang; Zhang Can; Ma Li; Liang Song; Wang Wei

    2013-01-01

    The temperature characteristics of monolithically integrated wavelength-selectable light sources are experimentally investigated. The wavelength-selectable light sources consist of four distributed feedback (DFB) lasers, a multimode interferometer coupler, and a semiconductor optical amplifier. The oscillating wavelength of the DFB laser could be modulated by adjusting the device operating temperature. A wavelength range covering over 8.0nm is obtained with stable single-mode operation by selecting the appropriate laser and chip temperature. The thermal crosstalk caused by the lateral heat spreading between lasers operating simultaneously is evaluated by oscillating-wavelength shift. The thermal crosstalk approximately decreases exponentially as the increasing distance between lasers

  15. Acoustic of monolithic dome structures

    Directory of Open Access Journals (Sweden)

    Mostafa Refat Ismail

    2018-03-01

    The interior of monolithic domes have perfect, concave shapes to ensure that sound travels through the dome and perfectly collected at different vocal points. These dome structures are utilized for domestic use because the scale allows the focal points to be positioned across daily life activities, thereby affecting the sonic comfort of the internal space. This study examines the various acoustic treatments and parametric configurations of monolithic dome sizes. A geometric relationship of acoustic treatment and dome radius is established to provide architects guidelines on the correct selection of absorption needed to maintain the acoustic comfort of these special spaces.

  16. SXLS storage ring design

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    X-ray lithography has emerged as a strong candidate to meet the demands of ever finer linewidths on integrated circuits, particularly for linewidths less than .25 microns. Proximity printing X-ray lithography makes use of soft X-rays to shadow print an image of a mask onto a semiconductor wafer to produce integrated circuits. To generate the required X-rays in sufficient quantities to make commercial production viable, electron storage rings have been proposed as the soft X-ray sources. Existing storage rings have been used to do the initial development work and the success of these efforts has led the lithographers to request that new rings be constructed that are dedicated to X-ray lithography. As a result of a series of workshops held at BNL [10.3] which were attended by both semiconductor and accelerator scientists, the following set of zeroth order specifications' on the light and electron beam of a storage ring for X-ray lithography were developed: critical wavelength of light: λ c = 6 to 10 angstroms, white light power: P = 0.25 to 2.5 watts/mrad, horizontal collection angle per port: θ = 10 to 50 mrad, electron beam sizes: σ x ∼ σ y y ' < 1 mrad

  17. Black rings

    International Nuclear Information System (INIS)

    Emparan, Roberto; Reall, Harvey S

    2006-01-01

    A black ring is a five-dimensional black hole with an event horizon of topology S 1 x S 2 . We provide an introduction to the description of black rings in general relativity and string theory. Novel aspects of the presentation include a new approach to constructing black ring coordinates and a critical review of black ring microscopics. (topical review)

  18. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  19. Monolithic fiber optic sensor assembly

    Science.gov (United States)

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  20. Monolithic Integrated Ceramic Waveguide Filters

    OpenAIRE

    Hunter, IC; Sandhu, MY

    2014-01-01

    Design techniques for a new class of integrated monolithic high permittivity ceramic waveguide filters are presented. These filters enable a size reduction of 50% compared to air-filled TEM filters with the same unloaded Q-Factor. Designs for both chebyshev and asymmetric generalized chebyshev filter are presented, with experimental results for an 1800 MHz chebyshev filter showing excellent agreement with theory.

  1. White Ring; White ring

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, H.; Yuzawa, H. [Nikken Sekkei Ltd., Osaka (Japan)

    1998-01-05

    White Ring is a citizen`s gymnasium used for figure skating and short track speed skating games of 18th Winter Olympic Games in 1998. White Ring is composed of a main-arena and a sub-arena. For the main-arena with an area 41mtimes66m, an ice link can be made by disengaging the potable floor and by flowing brine in the bridged polystyrene pipes embedded in the concrete floor. Due to the fortunate groundwater in this site, well water is used for the outside air treatment energy in 63% during heating and in 35% during cooling. Ammonia is used as a cooling medium for refrigerating facility. For the heating of audience area in the large space, heat load from the outside is reduced by enhancing the heat insulation performance of the roof of arena. The audience seats are locally heated using heaters. For the White Ring, high quality environment is realized for games through various functions of the large-scale roof of the large space. Success of the big event was expected. 15 figs., 4 tabs.

  2. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  3. Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

  4. Protective Skins for Aerogel Monoliths

    Science.gov (United States)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  5. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  6. Vortex rings

    CERN Document Server

    Akhmetov, D G

    2009-01-01

    This text on vortex rings covers their theoretical foundation, systematic investigations, and practical applications such as the extinction of fires at gushing oil wells. It pays special attention to the formation and motion of turbulent vortex rings.

  7. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  8. Iminodiacetic acid functionalised organopolymer monoliths: application to the separation of metal cations by capillary high-performance chelation ion chromatography.

    Science.gov (United States)

    Moyna, Áine; Connolly, Damian; Nesterenko, Ekaterina; Nesterenko, Pavel N; Paull, Brett

    2013-03-01

    Lauryl methacrylate-co-ethylene dimethacrylate monoliths were polymerised within fused silica capillaries and subsequently photo-grafted with varying amounts of glycidyl methacrylate (GMA). The grafted monoliths were then further modified with iminodiacetic acid (IDA), resulting in a range of chelating ion-exchange monoliths of increasing capacity. The IDA functional groups were attached via ring opening of the epoxy group on the poly(GMA) structure. Increasing the amount of attached poly(GMA), via photo-grafting with increasing concentrations of GMA, from 15 to 35%, resulted in a proportional and controlled increase in the complexation capacity of the chelating monoliths. Scanning capacitively coupled contactless conductivity detection (sC(4)D) was used to characterise and verify homogenous distribution of the chelating ligand along the length of the capillaries non-invasively. Chelation ion chromatographic separations of selected transition and heavy metals were carried out, with retention factor data proportional to the concentration of grafted poly(GMA). Average peak efficiencies of close to 5,000 N/m were achieved, with the isocratic separation of Na, Mg(II), Mn(II), Co(II), Cd(II) and Zn(II) possible on a 250-mm-long monolith. Multiple monolithic columns produced to the same recipes gave RSD data for retention factors of ions). The monolithic chelating ion-exchanger was applied to the separation of alkaline earth and transition metal ions spiked in natural and potable waters.

  9. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  10. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  11. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  12. A monolithic silicon detector telescope

    International Nuclear Information System (INIS)

    Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

    1996-01-01

    An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

  13. Imaging monolithic silicon detector telescopes

    International Nuclear Information System (INIS)

    Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

    2008-01-01

    We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

  14. Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

    Science.gov (United States)

    Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

    2018-02-01

    In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

  15. Vertically coupled double quantum rings at zero magnetic field

    OpenAIRE

    Malet, Francesc; Barranco, Manuel; Lipparini, Enrico; Pi, Ricardo Mayol Martí; Climente, Juan Ignacio; Planelles, Josep

    2006-01-01

    Within local-spin-density functional theory, we have investigated the `dissociation' of few-electron circular vertical semiconductor double quantum ring artificial molecules at zero magnetic field as a function of inter-ring distance. In a first step, the molecules are constituted by two identical quantum rings. When the rings are quantum mechanically strongly coupled, the electronic states are substantially delocalized, and the addition energy spectra of the artificial molecule resemble thos...

  16. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  17. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  18. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  19. Superconducting detectors for semiconductor quantum photonics

    International Nuclear Information System (INIS)

    Reithmaier, Guenther M.

    2015-01-01

    In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

  20. Microfluidic devices and methods including porous polymer monoliths

    Science.gov (United States)

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  1. Simultaneous all-optical add and drop multiplexing of 40-Gbit/s OTDM signals using monolithically integrated Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Jepsen, Kim Stokholm; Mikkelsen, Benny; Vaa, Michael

    1998-01-01

    Simultaneous all-optical add and drop multiplexing of a 40-Gbit/s OTDM signal using a monolithically integrated semiconductor optical amplifier/Mach Zehnder interferometer (SOA-MZI) is demonstrated. While maintaining a penalty of 1.3 dB for the add operation the sensitivity for the demultiplexed ...... signal is -34.4 dBm...

  2. All-Optical Regenerative OTDM Add-Drop Multiplexing at 40 Gb/s using Monolithic InP Mach-Zehnder Interferometer

    DEFF Research Database (Denmark)

    Fischer, St.; Dülk, M.; Gamper, E.

    2000-01-01

    We present a novel method for all-optical add-drop multiplexing having regenerative capability for 40-Gb/s optical time-division multiplexed (OTDM) data using a semiconductor optical amplifier (SOA) based, monolithic Mach-Zehnder interferometer (MZI). Simultaneous dropping of one 10-Gb/s channel ...

  3. Chromatographic selectivity of poly(alkyl methacrylate-co-divinylbenzene) monolithic columns for polar aromatic compounds by pressure-driven capillary liquid chromatography

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shu-Ling; Wang, Chih-Chieh; Fuh, Ming-Ren, E-mail: msfuh@scu.edu.tw

    2016-10-05

    In this study, divinylbenzene (DVB) was used as the cross-linker to prepare alkyl methacrylate (AlMA) monoliths for incorporating π-π interactions between the aromatic analytes and AlMA-DVB monolithic stationary phases in capillary LC analysis. Various AlMA/DVB ratios were investigated to prepare a series of 30% AlMA-DVB monolithic stationary phases in fused-silica capillaries (250-μm i.d.). The physical properties (such as porosity, permeability, and column efficiency) of the synthesized AlMA-DVB monolithic columns were investigated for characterization. Isocratic elution of phenol derivatives was first employed to evaluate the suitability of the prepared AlMA-DVB columns for small molecule separation. The run-to-run (0.16–1.20%, RSD; n = 3) and column-to-column (0.26–2.95%, RSD; n = 3) repeatabilities on retention times were also examined using the selected AlMA-DVB monolithic columns. The π-π interactions between the aromatic ring and the DVB-based stationary phase offered better recognition on polar analytes with aromatic moieties, which resulted in better separation resolution of aromatic analytes on the AlMA-DVB monolithic columns. In order to demonstrate the capability of potential environmental and/or food safety applications, eight phenylurea herbicides with single benzene ring and seven sulfonamide antibiotics with polyaromatic moieties were analyzed using the selected AlMA-DVB monolithic columns. - Highlights: • First investigation on chromatographic selectivity of AlMA-DVB monolithic columns. • Good run-to-run/column-to-column repeatability (<3%) on AlMA-DVB monolithic columns. • Efficient separation of phenylurea herbicides and sulfonamides on AlMA-DVB columns.

  4. The role of contacts in semiconductor gamma radiation detectors

    International Nuclear Information System (INIS)

    Lachish, U.

    1998-01-01

    It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

  5. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  6. ring system

    African Journals Online (AJOL)

    1,3,2-DIAZABORACYCLOALKANE. RING SYSTEM. Negussie Retta" and Robert H. Neilson. 'Department of Chemistry, Addis Ababa University, P.O. Box 1176, Addis Ababa, Ethiopia. Department of Chemistry, Texas Christian University.

  7. Planetary Rings

    Science.gov (United States)

    Nicholson, P. D.

    2001-11-01

    A revolution in the studies in planetary rings studies occurred in the period 1977--1981, with the serendipitous discovery of the narrow, dark rings of Uranus, the first Voyager images of the tenuous jovian ring system, and the many spectacular images returned during the twin Voyager flybys of Saturn. In subsequent years, ground-based stellar occultations, HST observations, and the Voyager flybys of Uranus (1986) and Neptune (1989), as well as a handful of Galileo images, provided much additional information. Along with the completely unsuspected wealth of detail these observations revealed came an unwelcome problem: are the rings ancient or are we privileged to live at a special time in history? The answer to this still-vexing question may lie in the complex gravitational interactions recent studies have revealed between the rings and their retinues of attendant satellites. Among the four known ring systems, we see elegant examples of Lindblad and corotation resonances (first invoked in the context of galactic disks), electromagnetic resonances, spiral density waves and bending waves, narrow ringlets which exhibit internal modes due to collective instabilities, sharp-edged gaps maintained via tidal torques from embedded moonlets, and tenuous dust belts created by meteoroid impact onto parent bodies. Perhaps most puzzling is Saturn's multi-stranded, clumpy F ring, which continues to defy a simple explanation 20 years after it was first glimpsed in grainy images taken by Pioneer 11. Voyager and HST images reveal a complex, probably chaotic, dynamical interaction between unseen parent bodies within this ring and its two shepherd satellites, Pandora and Prometheus. The work described here reflects contributions by Joe Burns, Jeff Cuzzi, Luke Dones, Dick French, Peter Goldreich, Colleen McGhee, Carolyn Porco, Mark Showalter, and Bruno Sicardy, as well as those of the author. This research has been supported by NASA's Planetary Geology and Geophysics program and the

  8. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    Energy Technology Data Exchange (ETDEWEB)

    Siwak, N. P. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States); Fan, X. Z.; Ghodssi, R. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Kanakaraju, S.; Richardson, C. J. K. [Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  9. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-10-27

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  10. Monolithic solid-state lasers for spaceflight

    Science.gov (United States)

    Krainak, Michael A.; Yu, Anthony W.; Stephen, Mark A.; Merritt, Scott; Glebov, Leonid; Glebova, Larissa; Ryasnyanskiy, Aleksandr; Smirnov, Vadim; Mu, Xiaodong; Meissner, Stephanie; Meissner, Helmuth

    2015-02-01

    A new solution for building high power, solid state lasers for space flight is to fabricate the whole laser resonator in a single (monolithic) structure or alternatively to build a contiguous diffusion bonded or welded structure. Monolithic lasers provide numerous advantages for space flight solid-state lasers by minimizing misalignment concerns. The closed cavity is immune to contamination. The number of components is minimized thus increasing reliability. Bragg mirrors serve as the high reflector and output coupler thus minimizing optical coatings and coating damage. The Bragg mirrors also provide spectral and spatial mode selection for high fidelity. The monolithic structure allows short cavities resulting in short pulses. Passive saturable absorber Q-switches provide a soft aperture for spatial mode filtering and improved pointing stability. We will review our recent commercial and in-house developments toward fully monolithic solid-state lasers.

  11. Monolithically integrated 8-channel WDM reflective modulator

    NARCIS (Netherlands)

    Stopinski, S.T.; Malinowski, M.; Piramidowicz, R.; Smit, M.K.; Leijtens, X.J.M.

    2013-01-01

    In this work the design and characterization of a monolithically integrated photonic circuit acting as a reflective modulator for eight WDM channels is presented. The chip was designed and fabricated in a generic integration technology

  12. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  13. Novel manifestations of the Aharonov-Bohm effect in quantum rings and Moebius rings

    International Nuclear Information System (INIS)

    Fomin, Vladimir M.

    2013-01-01

    - An overview is given on the recent experimental and theoretical advancements in studies of novel manifestations of the Aharonov-Bohm quantum-interference effect for excitons confined to self assembled quantum rings and other semiconductor nanostructures with ring-like states of charge carriers as well as for electrons in Moebius rings at the micro- and nanoscale. The exciton Aharonov-Bohm effect can be effectively controlled by an out-of-plane magnetic field, a vertical electric field, a spin disorder. A 'delocalization-to-localization' transition for the electron ground state occurs in a Moebius ring as it is made more inhomogeneous. (authors)

  14. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  15. Decomposition of monolithic web application to microservices

    OpenAIRE

    Zaymus, Mikulas

    2017-01-01

    Solteq Oyj has an internal Wellbeing project for massage reservations. The task of this thesis was to transform the monolithic architecture of this application to microservices. The thesis starts with a detailed comparison between microservices and monolithic application. It points out the benefits and disadvantages microservice architecture can bring to the project. Next, it describes the theory and possible strategies that can be used in the process of decomposition of an existing monoli...

  16. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  17. Activated Carbon Fiber Monoliths as Supercapacitor Electrodes

    Directory of Open Access Journals (Sweden)

    Gelines Moreno-Fernandez

    2017-01-01

    Full Text Available Activated carbon fibers (ACF are interesting candidates for electrodes in electrochemical energy storage devices; however, one major drawback for practical application is their low density. In the present work, monoliths were synthesized from two different ACFs, reaching 3 times higher densities than the original ACFs’ apparent densities. The porosity of the monoliths was only slightly decreased with respect to the pristine ACFs, the employed PVDC binder developing additional porosity upon carbonization. The ACF monoliths are essentially microporous and reach BET surface areas of up to 1838 m2 g−1. SEM analysis reveals that the ACFs are well embedded into the monolith structure and that their length was significantly reduced due to the monolith preparation process. The carbonized monoliths were studied as supercapacitor electrodes in two- and three-electrode cells having 2 M H2SO4 as electrolyte. Maximum capacitances of around 200 F g−1 were reached. The results confirm that the capacitance of the bisulfate anions essentially originates from the double layer, while hydronium cations contribute with a mixture of both, double layer capacitance and pseudocapacitance.

  18. Novel swirl-flow reactor for kinetic studies of semiconductor photocatalysis

    NARCIS (Netherlands)

    Ray, A.K; Beenackers, A.A C M

    1997-01-01

    A new two-phase swirl-flow monolithic-type reactor was designed to study the kinetics of heterogeneous photocatalytic processes on immobilized semiconductor catalysts. True kinetic rate constants for destruction of a textile dye were measured as a function of wavelength of light intensity and angle

  19. Design and evaluation of modelocked semiconductor lasers for low noise and high stability

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2005-01-01

    We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

  20. Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

    Science.gov (United States)

    Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

    1991-04-01

    The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

  1. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  2. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  3. Surface emitting ring quantum cascade lasers for chemical sensing

    Science.gov (United States)

    Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

    2018-01-01

    We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

  4. Semiconductor detectors in the low countries

    International Nuclear Information System (INIS)

    Heijne, Erik H.M.

    2003-01-01

    Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double-sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime ∼10 -12 s, which decay on sub-millimeter scale. The intensive activity in silicon detector R and D culminated in 1991 in the construction of fine-grained 2D monolithic and hybrid pixel detectors that incorporate sophisticated electronic functions in each microscopic detection element, with typical dimensions of 25-100 μm. Besides being a powerful high intensity tracker for particle physics, this device can also be designed as a new X-ray imager, which allows selective counting of individual photons in each pixel at MHz frequency

  5. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

    Science.gov (United States)

    Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

    2013-11-08

    Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  6. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  7. Storage Rings

    International Nuclear Information System (INIS)

    Fischer, W.

    2010-01-01

    Storage rings are circular machines that store particle beams at a constant energy. Beams are stored in rings without acceleration for a number of reasons (Tab. 1). Storage rings are used in high-energy, nuclear, atomic, and molecular physics, as well as for experiments in chemistry, material and life sciences. Parameters for storage rings such as particle species, energy, beam intensity, beam size, and store time vary widely depending on the application. The beam must be injected into a storage ring but may not be extracted (Fig. 1). Accelerator rings such as synchrotrons are used as storage rings before and after acceleration. Particles stored in rings include electrons and positrons; muons; protons and anti-protons; neutrons; light and heavy, positive and negative, atomic ions of various charge states; molecular and cluster ions, and neutral polar molecules. Spin polarized beams of electrons, positrons, and protons were stored. The kinetic energy of the stored particles ranges from 10 -6 eV to 3.5 x 10 12 eV (LHC, 7 x 10 12 eV planned), the number of stored particles from one (ESR) to 1015 (ISR). To store beam in rings requires bending (dipoles) and transverse focusing (quadrupoles). Higher order multipoles are used to correct chromatic aberrations, to suppress instabilities, and to compensate for nonlinear field errors of dipoles and quadrupoles. Magnetic multipole functions can be combined in magnets. Beams are stored bunched with radio frequency systems, and unbunched. The magnetic lattice and radio frequency system are designed to ensure the stability of transverse and longitudinal motion. New technologies allow for better storage rings. With strong focusing the beam pipe dimensions became much smaller than previously possible. For a given circumference superconducting magnets make higher energies possible, and superconducting radio frequency systems allow for efficient replenishment of synchrotron radiation losses of large current electron or positron beams

  8. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  9. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

    International Nuclear Information System (INIS)

    Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

    2012-01-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  10. ROMP-Derived cyclooctene-based monolithic polymeric materials reinforced with inorganic nanoparticles for applications in tissue engineering

    Directory of Open Access Journals (Sweden)

    Franziska Weichelt

    2010-12-01

    Full Text Available Porous monolithic inorganic/polymeric hybrid materials have been prepared via ring-opening metathesis copolymerization starting from a highly polar monomer, i.e., cis-5-cyclooctene-trans-1,2-diol and a 7-oxanorborn-2-ene-derived cross-linker in the presence of porogenic solvents and two types of inorganic nanoparticles (i.e., CaCO3 and calcium hydroxyapatite, respectively using the third-generation Grubbs initiator RuCl2(Py2(IMesH2(CHPh. The physico-chemical properties of the monolithic materials, such as pore size distribution and microhardness were studied with regard to the nanoparticle type and content. Moreover, the reinforced monoliths were tested for the possible use as scaffold materials in tissue engineering, by carrying out cell cultivation experiments with human adipose tissue-derived stromal cells.

  11. Flux qubits on semiconducting quantum ring

    International Nuclear Information System (INIS)

    Szopa, M; Zipper, E

    2010-01-01

    The ability to control the quantum state of a single electrons in a quantum ring made of a semiconductor is at the heart of recent developments towards a scalable quantum computer. A peculiar dispersion relation of quantum rings allows to steer the ground state properties by the magnetic flux and offers spin and orbital degrees of freedom for quantum manipulations. We show that such ring can be effectively reduced to the two-state system forming a qubit on orbital or spin degrees of freedom.

  12. Uncooled monolithic ferroelectric IRFPA technology

    Science.gov (United States)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  13. Topological rings

    CERN Document Server

    Warner, S

    1993-01-01

    This text brings the reader to the frontiers of current research in topological rings. The exercises illustrate many results and theorems while a comprehensive bibliography is also included. The book is aimed at those readers acquainted with some very basic point-set topology and algebra, as normally presented in semester courses at the beginning graduate level or even at the advanced undergraduate level. Familiarity with Hausdorff, metric, compact and locally compact spaces and basic properties of continuous functions, also with groups, rings, fields, vector spaces and modules, and with Zorn''s Lemma, is also expected.

  14. Ring accelerators

    International Nuclear Information System (INIS)

    Gisler, G.; Faehl, R.

    1983-01-01

    We present two-dimensional simulations in (r-z) and r-theta) cylinderical geometries of imploding-liner-driven accelerators of rings of charged particles. We address issues of azimuthal and longitudinal stability of the rings. We discuss self-trapping designs in which beam injection and extraction is aided by means of external cusp fields. Our simulations are done with the 2-1/2-D particle-in-cell plasma simulation code CLINER, which combines collisionless, electromagnetic PIC capabilities with a quasi-MHD finite element package

  15. A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Xindong; Mao Luhong; Yu Changliang; Zhang Shilin; Xie Sheng, E-mail: xxd@tju.edu.c [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China)

    2009-12-15

    A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 {mu}m EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10{sup -9}. The chip dissipates 60 mW under a single 3.3 V supply. (semiconductor integrated circuits)

  16. A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

    International Nuclear Information System (INIS)

    Xiao Xindong; Mao Luhong; Yu Changliang; Zhang Shilin; Xie Sheng

    2009-01-01

    A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10 -9 . The chip dissipates 60 mW under a single 3.3 V supply. (semiconductor integrated circuits)

  17. A Monolithic Interconnected module with a tunnel Junction for Enhanced Electrical and Optical Performance

    Energy Technology Data Exchange (ETDEWEB)

    Murray, Christopher Sean; Wilt, David Morgan

    1999-06-30

    An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMs), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

  18. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  19. Ring interferometry

    CERN Document Server

    Malykin, Grigorii B; Zhurov, Alexei

    2013-01-01

    This monograph is devoted to the creation of a comprehensive formalism for quantitative description of polarized modes' linear interaction in modern single-mode optic fibers. The theory of random connections between polarized modes, developed in the monograph, allows calculations of the zero shift deviations for a fiber ring interferometer. The monograph addresses also the

  20. Fire resistance of prefabricated monolithic slab

    Directory of Open Access Journals (Sweden)

    Gravit Marina

    2017-01-01

    Full Text Available A prefabricated monolithic slab (PMS has a number of valuable advantages, they allow to significantly decrease the weight of construction keeping the necessary structural-load capacity, to speed up and cheapen work conduction, to increase the heat isolating properties of an enclosure structure [1]. In order to create a design method of prefabricated monolithic slab fire-resistance, it's necessary to perform a series of PMS testing, one of which is being described in this article. Subjected to the test is a fragment of prefabricated monolithic slab with polystyrene concrete inserts along the beams with bent metal profile 250 mm thick, with a 2.7 m span loaded with evenly spread load equal to 600 kg/m2. After 3 hour testing for fire-resistance [2] no signs of construction ultimate behavior were detected.

  1. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  2. Monolithic JFET preamplifier for ionization chamber calorimeter

    International Nuclear Information System (INIS)

    Radeka, V.; Rescia, S.; Manfredi, P.F.; Speziali, V.

    1990-10-01

    A monolithic charge sensitive preamplifier using exclusively n-channel diffused JFETs has been designed and is now being fabricated by INTERFET Corp. by means of a dielectrically isolated process which allows preserving as much as possible the technology upon which discrete JFETs are based. A first prototype built by means of junction isolated process has been delivered. The characteristics of monolithically integrated JFETs compare favorably with discrete devices. First results of tests of a preamplifier which uses these devices are reported. 4 refs

  3. Increased thermal conductivity monolithic zeolite structures

    Science.gov (United States)

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  4. Technology development for SOI monolithic pixel detectors

    International Nuclear Information System (INIS)

    Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubinski, A.; Kucharski, K.; Tomaszewski, D.; Caccia, M.; Kucewicz, W.; Niemiec, H.

    2006-01-01

    A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications

  5. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  7. FLUIDIZED BED STEAM REFORMER MONOLITH FORMATION

    International Nuclear Information System (INIS)

    Jantzen, C

    2006-01-01

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or ''mineralized'' waste form while converting organic components to CO 2 and steam, and nitrate/nitrite components, if any, to N 2 . The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO 4 , I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydroceramics. All but one of the nine monoliths tested met the 2 durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydroceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form

  8. Package Holds Five Monolithic Microwave Integrated Circuits

    Science.gov (United States)

    Mysoor, Narayan R.; Decker, D. Richard; Olson, Hilding M.

    1996-01-01

    Packages protect and hold monolithic microwave integrated circuit (MMIC) chips while providing dc and radio-frequency (RF) electrical connections for chips undergoing development. Required to be compact, lightweight, and rugged. Designed to minimize undesired resonances, reflections, losses, and impedance mismatches.

  9. Monolithic integration of a micromachined piezoresistive flow sensor

    International Nuclear Information System (INIS)

    Li, Dan; Zhao, Tao; Yang, Zhenchuan; Zhang, Dacheng

    2010-01-01

    In this paper, a monolithic integrated piezoresistive flow sensor is presented, which was fabricated with an intermediate CMOS (complementary metal-oxide semiconductor) MEMS (micro electro mechanical system) process compatible with integrated pressure sensors. Four symmetrically arranged silicon diaphragms with piezoresistors on them were used to sense the drag force induced by the input gas flow. A signal conditioning CMOS circuit with a temperature compensation module was designed and fabricated simultaneously on the same chip with an increase of the total chip area by only 35%. An extra step of boron implantation and annealing was inserted into the standard CMOS process to form the piezoresistors. KOH anisotropic etching from the backside and deep reactive ion etching (DRIE) from the front side were combined to realize the silicon diaphragms. The integrated flow sensor was packaged and tested. The testing results indicated that the addition of piezoresistor formation and structure releasing did not significantly change any of the circuitry characteristics. The measured sensor output has a quadratic relation with the input flow rate of the fluid as predicted. The tested resolution of the sensor is less than 0.1 L min −1 with a measurement range of 0.1–5 L min −1 and the sensitivity is better than 40 mV per (L min −1 ) with a measurement range of 4–5 L min −1 . The measured noise floor of the sensor is 21.7 µV rtHz −1 .

  10. A monolithic RF transceiver for DC-OFDM UWB

    International Nuclear Information System (INIS)

    Chen Yunfeng; Li Wei; Fu Haipeng; Gao Ting; Chen Danfeng; Zhou Feng; Cai Deyun; Li Dan; Niu Yangyang; Zhou Hanchao; Zhu Ning; Li Ning; Ren Junyan

    2012-01-01

    This paper presents a first monolithic RF transceiver for DC-OFDM UWB applications. The proposed direct-conversion transceiver integrates all the building blocks including two receiver (Rx) cores, two transmitter (Tx) cores and a dual-carrier frequency synthesizer (DC-FS) as well as a 3-wire serial peripheral interface (SPI) to set the operating status of the transceiver. The ESD-protected chip is fabricated by a TSMC 0.13-μm RF CMOS process with a die size of 4.5 × 3.6 mm 2 . The measurement results show that the wideband Rx achieves an NF of 5–6.2 dB, a max gain of 76–84 dB with 64-dB variable gain, an in-/out-of-band IIP3 of −6/+4 dBm and an input loss S 11 of < −10 in all bands. The Tx achieves an LOLRR/IMGRR of −34/-33 dBc, a typical OIP3 of +6 dBm and a maximum output power of −5 dBm. The DC-FS outputs two separate carriers simultaneously with an inter-band hopping time of < 1.2 ns. The full chip consumes a maximum current of 420 mA under a 1.2-V supply. (semiconductor integrated circuits)

  11. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

  12. Colloidal CdSe Quantum Rings.

    Science.gov (United States)

    Fedin, Igor; Talapin, Dmitri V

    2016-08-10

    Semiconductor quantum rings are of great fundamental interest because their non-trivial topology creates novel physical properties. At the same time, toroidal topology is difficult to achieve for colloidal nanocrystals and epitaxially grown semiconductor nanostructures. In this work, we introduce the synthesis of luminescent colloidal CdSe nanorings and nanostructures with double and triple toroidal topology. The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatelets. We discuss a possible mechanism of the transformation of nanoplatelets into nanorings and potential utility of colloidal nanorings for magneto-optical (e.g., Aharonov-Bohm effect) and other applications.

  13. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  14. Preparation of methacrylate-based anion-exchange monolithic microbore column for chromatographic separation of DNA fragments and oligonucleotides

    Energy Technology Data Exchange (ETDEWEB)

    Sabarudin, Akhmad, E-mail: sabarjpn@ub.ac.id [Division of Nano-materials Science, EcoTopia Science Institute, Nagoya University, Furu-Cho, Chikusa-Ku, Nagoya 464-8603 (Japan); Department of Chemistry, Faculty of Science, Brawijaya University, Jl Veteran Malang 65145 (Indonesia); Huang, Junchao; Shu, Shin; Sakagawa, Shinnosuke [Division of Nano-materials Science, EcoTopia Science Institute, Nagoya University, Furu-Cho, Chikusa-Ku, Nagoya 464-8603 (Japan); Umemura, Tomonari, E-mail: umemura@apchem.nagoya-u.ac.jp [Division of Nano-materials Science, EcoTopia Science Institute, Nagoya University, Furu-Cho, Chikusa-Ku, Nagoya 464-8603 (Japan)

    2012-07-29

    Highlights: Black-Right-Pointing-Pointer Microbore-scale (1 mm i.d.) anion-exchange monolithic column. Black-Right-Pointing-Pointer Potentially preparative applications. Black-Right-Pointing-Pointer Separation of oligodeoxythymidylic acids and DNA fragments. - Abstract: In this paper, we report on the preparation of a microbore-scale (1 mm i.d.) anion-exchange monolithic column suitable not only for analytical purposes but also for potentially preparative applications. In order to meet the conflicting requirements of high permeability and good mechanical strength, the following two-step procedure was applied. First, an epoxy-containing monolith was synthesized by in situ copolymerization of glycidyl methacrylate (GMA) and ethylene dimethacrylate (EDMA) within the confines of a silicosteel tubing of 1.02 mm i.d. and 1/16 Double-Prime o.d. in the presence of a ternary porogenic mixture of 1-propanol, 1,4-butanediol, and water. The monolithic matrix was subsequently converted into weak anion-exchanger via the ring-opening reaction of epoxy group with diethyl amine. The dynamic binding capacity was 21.4 mg mL{sup -1} for bovine serum albumin (BSA) at 10% breakthrough. The morphology and porous structure of this monolith were assessed by scanning electron microscope (SEM) and inverse size exclusion chromatography (ISEC). To optimize the separation efficiency, the effects of various chromatographic parameters upon the separation of DNA fragments were investigated. The resulting monolithic anion exchanger demonstrated good potential for the separation of both single- and double-stranded DNA molecules using a gradient elution with NaCl in Tris-HCl buffer (20 mM). Oligodeoxythymidylic acids (dT{sub 12}-dT{sub 18}) were successfully resolved at pH 8, while the fragments of 20 bp DNA ladder, 100 bp DNA ladder, and pBR322-HaeIII digest were efficiently separated at pH 9.

  15. Lamb shift of energy levels in quantum rings

    International Nuclear Information System (INIS)

    Kryuchkyan, G Yu; Kyriienko, O; Shelykh, I A

    2015-01-01

    We study the vacuum radiative corrections to energy levels of a confined electron in quantum rings. The calculations are provided for the Lamb shift of energy levels in a low-momentum region of virtual photons and for both one-dimensional and two-dimensional quantum rings. We show that contrary to the well known case of a hydrogen atom the value of the Lamb shift increases with the magnetic momentum quantum number m. We also investigate the dependence of the Lamb shift on magnetic flux piercing the ring and demonstrate a presence of magnetic-flux-dependent oscillations. For a one-dimensional ring the value of the shift strongly depends on the radius of the ring. It is small for semiconductor rings but can attain measurable quantities in natural organic ring-shape molecules, such as benzene, cycloalcanes and porphyrins. (paper)

  16. Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

    Science.gov (United States)

    Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

    1988-01-01

    56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

  17. An asymmetric integrated extended cavity 20GHz mode-locked quantum well ring laser fabricated in the JePPIX technology platform

    NARCIS (Netherlands)

    Tahvili, M.S.; Barbarin, Y.; Ambrosius, H.P.M.M.; Smit, M.K.; Bente, E.A.J.M.; Leijtens, X.J.M.; Vries, de T.; Smalbrugge, E.; Bolk, J.

    2011-01-01

    In this paper, we present mode-locked operation of a monolithic 20GHz integrated extended cavity ring laser. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section (SOA), a separate 40µm long saturable absorber (SA) section, passive waveguide sections (shallow and deep

  18. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Science.gov (United States)

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  19. Wafer-level packaging with compression-controlled seal ring bonding

    Science.gov (United States)

    Farino, Anthony J

    2013-11-05

    A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

  20. A monolithic integrated photonic microwave filter

    Science.gov (United States)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2017-02-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  1. Test of the TRAPPISTe monolithic detector system

    Science.gov (United States)

    Soung Yee, L.; Álvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

    2013-12-01

    A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source.

  2. FLUIDIZED BED STEAM REFORMER MONOLITH FORMATION

    Energy Technology Data Exchange (ETDEWEB)

    Jantzen, C

    2006-12-22

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or ''mineralized'' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydroceramics. All but one of the nine monoliths tested met the <2g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydroceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form.

  3. Concrete pedestals for high-performance semiconductor production equipment

    Science.gov (United States)

    Vogen, Wayne; Franklin, Craig L.; Morneault, Joseph

    1999-09-01

    Concrete pedestals have many vibration and stiffness characteristics that make them a superior choice for sensitive semiconductor production equipment including scanners, scanning electron microscopes, focused ion beam millers and optical inspection equipment. Among the advantages of concrete pedestals are high inherent damping, monolithic construction that eliminates low stiffness joints common in steep pedestals, ability to reuse and ease of installation. Steel pedestals that have plates attached to the top of the frame are easily excited by acoustic excitation, especially in the range from 50 Hertz to 400 Hertz. Concrete pedestals do not suffer from this phenomenon because of the high mass and damping of the top surface.

  4. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  5. An overview of monolithic zirconia in dentistry

    Directory of Open Access Journals (Sweden)

    Özlem Malkondu

    2016-07-01

    Full Text Available Zirconia restorations have been used successfully for years in dentistry owing to their biocompatibility and good mechanical properties. Because of their lack of translucency, zirconia cores are generally veneered with porcelain, which makes restorations weaker due to failure of the adhesion between the two materials. In recent years, all-ceramic zirconia restorations have been introduced in the dental sector with the intent to solve this problem. Besides the elimination of chipping, the reduced occlusal space requirement seems to be a clear advantage of monolithic zirconia restorations. However, scientific evidence is needed to recommend this relatively new application for clinical use. This mini-review discusses the current scientific literature on monolithic zirconia restorations. The results of in vitro studies suggested that monolithic zirconia may be the best choice for posterior fixed partial dentures in the presence of high occlusal loads and minimal occlusal restoration space. The results should be supported with much more in vitro and particularly in vivo studies to obtain a final conclusion.

  6. Characterization of SOI monolithic detector system

    Science.gov (United States)

    Álvarez-Rengifo, P. L.; Soung Yee, L.; Martin, E.; Cortina, E.; Ferrer, C.

    2013-12-01

    A monolithic active pixel sensor for charged particle tracking was developed. This research is performed within the framework of an R&D project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) whose aim is to evaluate the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two chips were fabricated: TRAPPISTe-1 and TRAPPISTe-2. TRAPPISTe-1 was produced at the WINFAB facility at the Université catholique de Louvain (UCL), Belgium, in a 2 μm fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 was fabricated with the LAPIS 0.2 μm FD-SOI CMOS process. The electrical characterization on single transistor test structures and of the electronic readout for the TRAPPISTe series of monolithic pixel detectors was carried out. The behavior of the prototypes’ electronics as a function of the back voltage was studied. Results showed that both readout circuits exhibited sensitivity to the back voltage. Despite this unwanted secondary effect, the responses of TRAPPISTe-2 amplifiers can be improved by a variation in the circuit parameters.

  7. Metal oxide nanorod arrays on monolithic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Pu-Xian; Guo, Yanbing; Ren, Zheng

    2018-01-02

    A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

  8. Fracture-resistant monolithic dental crowns.

    Science.gov (United States)

    Zhang, Yu; Mai, Zhisong; Barani, Amir; Bush, Mark; Lawn, Brian

    2016-03-01

    To quantify the splitting resistance of monolithic zirconia, lithium disilicate and nanoparticle-composite dental crowns. Fracture experiments were conducted on anatomically-correct monolithic crown structures cemented to standard dental composite dies, by axial loading of a hard sphere placed between the cusps. The structures were observed in situ during fracture testing, and critical loads to split the structures were measured. Extended finite element modeling (XFEM), with provision for step-by-step extension of embedded cracks, was employed to simulate full failure evolution. Experimental measurements and XFEM predictions were self-consistent within data scatter. In conjunction with a fracture mechanics equation for critical splitting load, the data were used to predict load-sustaining capacity for crowns on actual dentin substrates and for loading with a sphere of different size. Stages of crack propagation within the crown and support substrate were quantified. Zirconia crowns showed the highest fracture loads, lithium disilicate intermediate, and dental nanocomposite lowest. Dental nanocomposite crowns have comparable fracture resistance to natural enamel. The results confirm that monolithic crowns are able to sustain high bite forces. The analysis indicates what material and geometrical properties are important in optimizing crown performance and longevity. Copyright © 2015 Academy of Dental Materials. All rights reserved.

  9. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  10. Kayser-Fleischer Rings

    Science.gov (United States)

    ... Support Contacts Lab Tracker/Copper Calculator Stories Programs & Research ... About Everything you need to know about Wilson Disease Kayser-Fleischer Rings Definition Kayser-Fleischer Ring: Clinical sign. Brownish-yellow ring visible around the corneo- ...

  11. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  12. ASSOCIATIVE RINGS SOLVED AS LIE RINGS

    Directory of Open Access Journals (Sweden)

    M. B. Smirnov

    2011-01-01

    Full Text Available The paper has proved that an associative ring which is solvable of a n- class as a Lie ring has a nilpotent ideal of the nilpotent class not more than 3×10n–2  and a corresponding quotient ring satisfies an identity [[x1, x2, [x3, x4

  13. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  14. Large microwave tunability of GaAs-based multiferroic heterostructure for applications in monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Chen Yajie; Gao Jinsheng; Vittoria, C; Harris, V G; Heiman, D

    2010-01-01

    Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co 2 MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate-lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm -1 resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV -1 . This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.

  15. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  16. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  17. Semiconductor detectors in the low countries

    CERN Document Server

    Heijne, Erik H M

    2003-01-01

    Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double- sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime similar to 10**- **1**2s, which decay on sub-millimeter scale. The intensive activity in silicon detector R&D c...

  18. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    Science.gov (United States)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  19. Stirling engine piston ring

    Science.gov (United States)

    Howarth, Roy B.

    1983-01-01

    A piston ring design for a Stirling engine wherein the contact pressure between the piston and the cylinder is maintained at a uniform level, independent of engine conditions through a balancing of the pressure exerted upon the ring's surface and thereby allowing the contact pressure on the ring to be predetermined through the use of a preloaded expander ring.

  20. Alternative loop rings

    CERN Document Server

    Goodaire, EG; Polcino Milies, C

    1996-01-01

    For the past ten years, alternative loop rings have intrigued mathematicians from a wide cross-section of modern algebra. As a consequence, the theory of alternative loop rings has grown tremendously. One of the main developments is the complete characterization of loops which have an alternative but not associative, loop ring. Furthermore, there is a very close relationship between the algebraic structures of loop rings and of group rings over 2-groups. Another major topic of research is the study of the unit loop of the integral loop ring. Here the interaction between loop rings and group ri

  1. Disorder phenomena in covalent semiconductors

    International Nuclear Information System (INIS)

    Popescu, M.A.

    1975-01-01

    The structure of the amorphous semiconductors has been investigated by means of X-ray diffraction and by computer simulation of random network models. Amorphous germanium contains mainly five and six-membered rings of atoms. In glassy state, the ternary compounds A 2 B 4 C 2 5 , such as CdGeAs 2 contain only even rings of atoms (six-membered and eight-membered rings). In the memory glasses of the type A 2 B 4 C 2 5 , such as GeAs 2 Te 7 , the valency state of every element is that from the crystal and important van der Waals forces are effective in the network. No Ge-Ge, Ge-As and As-As bonds are formed. The high pressure forms of the germanium have been simulated by computer. The force constants of the covalent bonds in Ge III and Ge IV differ from those in Ge I. The bond bending force constant decreases rapidly when the density of the crystal increases, a fact which has been imparted to a reduction of the sp 3 hybridization. The compressibility curve of the Ge I has been explained. The effect of the radial and uniaxial deformation on the non-crystalline networks has been studied. The compressibility of the amorphous germanium is by 1.5 per cent greater than that of crystalline germanium. The Poisson coefficient for a-Ge network is 0.233. The structure of the As 2 S 3 glass doped with different amounts of germanium (up to 40 at. per cent) and silver (up to 12 at. per cent) has been investigated. The As 2 S 3 Gesub(x) compositions are constituted from a disordered packing of structural units whose chemical composition and relative proportion in the glass essentially depends on the germanium content. (author)

  2. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  3. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  4. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  5. Safety characteristics of the monolithic CFC divertor

    International Nuclear Information System (INIS)

    Zucchetti, M.; Merola, M.; Matera, R.

    1994-01-01

    The main distinguishing feature of the monolithic CFC divertor is the use of a single material, a carbon fibre reinforced carbon, for the protective armour, the heat sink and the cooling channels. This removes joint interface problems which are one of the most important concerns related to the reference solutions of the ITER CDA divertor. An activation analysis of the different coolant options for this concept is presented. It turns out that neither short-term nor long-term activation are a concern for any coolants investigated. Therefore the proposed concept proves to be attractive from a safety stand-point also. ((orig.))

  6. Safety characteristics of the monolithic CFC divertor

    Science.gov (United States)

    Zucchetti, M.; Merola, M.; Matera, R.

    1994-09-01

    The main distinguishing feature of the monolithic CFC divertor is the use of a single material, a carbon fibre reinforced carbon, for the protective armour, the heat sink and the cooling channels. This removes joint interface problems which are one of the most important concerns related to the reference solutions of the ITER CDA divertor. An activation analysis of the different coolant options for this concept is presented. It turns out that neither short-term nor long-term activation are a concern for any coolants investigated. Therefore the proposed concept proves to be attractive from a safety stand-point also.

  7. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  8. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  9. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  10. A novel photocatalytic monolith reactor for multiphase heterogeneous photocatalysis

    NARCIS (Netherlands)

    Du, P.; Carneiro, J.T.; Moulijn, J.A.; Mul, Guido

    2008-01-01

    A novel reactor for multi-phase photocatalysis is presented, the so-called internally illuminated monolith reactor (IIMR). In the concept of the IIMR, side light emitting fibers are placed inside the channels of a ceramic monolith, equipped with a TiO2 photocatalyst coated on the wall of each

  11. Immobilisation of shredded soft waste in cement monolith

    International Nuclear Information System (INIS)

    Brown, D.J.; Dalton, M.J.; Smith, D.L.

    1983-04-01

    A grouting process for the immobilisation of shredded contaminated laboratory waste in a cement monolith is being developed at the Atomic Energy Establishment Winfrith. The objective is to produce a 'monolithic' type package which is acceptable both for sea and land disposal. The work carried out on this project in the period April 1982 - March 1983 is summarised in this report. (author)

  12. Fabrication of mesoporous polymer monolith: a template-free approach.

    Science.gov (United States)

    Okada, Keisuke; Nandi, Mahasweta; Maruyama, Jun; Oka, Tatsuya; Tsujimoto, Takashi; Kondoh, Katsuyoshi; Uyama, Hiroshi

    2011-07-14

    Mesoporous polyacrylonitrile (PAN) monolith has been fabricated by a template-free approach using the unique affinity of PAN towards a water/dimethyl sulfoxide (DMSO) mixture. A newly developed Thermally Induced Phase Separation Technique (TIPS) has been used to obtain the polymer monoliths and their microstructures have been controlled by optimizing the concentration and cooling temperature.

  13. Creating deep soil core monoliths: Beyond the solum

    Science.gov (United States)

    Soil monoliths serve as useful teaching aids in the study of the Earth’s critical zone where rock, soil, water, air, and organisms interact. Typical monolith preparation has so far been confined to the 1 to 2-m depth of the solum. Critical ecosystem services provided by soils include materials from ...

  14. A Monolithic Perovskite Structure for Use as a Magnetic Regenerator

    DEFF Research Database (Denmark)

    Pryds, Nini; Clemens, Frank; Menon, Mohan

    2011-01-01

    A La0.67Ca0.26Sr0.07Mn1.05O3 (LCSM) perovskite was prepared for the first time as a ceramic monolithic regenerator used in a regenerative magnetic refrigeration device. The parameters influencing the extrusion process and the performance of the regenerator, such as the nature of the monolith paste...

  15. Fine-grain concrete from mining waste for monolithic construction

    Science.gov (United States)

    Lesovik, R. V.; Ageeva, M. S.; Lesovik, G. A.; Sopin, D. M.; Kazlitina, O. V.; Mitrokhin, A. A.

    2018-03-01

    The technology of a monolithic construction is a well-established practice among most Russian real estate developers. The strong points of the technology are low cost of materials and lower demand for qualified workers. The monolithic construction uses various types of reinforced slabs and foamed concrete, since they are easy to use and highly durable; they also need practically no additional treatment.

  16. Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders

    NARCIS (Netherlands)

    De Kanter, J.L.C.G.

    2006-01-01

    Summary accompanying the thesis: Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders by Jens de Kanter This thesis presents the investigation of the crush behaviour of both monolithic aluminium cylinders and externally fibre reinforced aluminium cylinders. The research is based

  17. Media Presentation Synchronisation for Non-monolithic Rendering Architectures

    NARCIS (Netherlands)

    I. Vaishnavi (Ishan); D.C.A. Bulterman (Dick); P.S. Cesar Garcia (Pablo Santiago); B. Gao (Bo)

    2007-01-01

    htmlabstractNon-monolithic renderers are physically distributed media playback engines. Non-monolithic renderers may use a number of different underlying network connection types to transmit media items belonging to a presentation. There is therefore a need for a media based and inter-network- type

  18. Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures.

    Science.gov (United States)

    Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois

    2017-08-09

    Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.

  19. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    Directory of Open Access Journals (Sweden)

    Haiyun Huang

    2015-10-01

    Full Text Available This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  20. Synthesis of Porous Carbon Monoliths Using Hard Templates.

    Science.gov (United States)

    Klepel, Olaf; Danneberg, Nina; Dräger, Matti; Erlitz, Marcel; Taubert, Michael

    2016-03-21

    The preparation of porous carbon monoliths with a defined shape via template-assisted routes is reported. Monoliths made from porous concrete and zeolite were each used as the template. The porous concrete-derived carbon monoliths exhibited high gravimetric specific surface areas up to 2000 m²·g -1 . The pore system comprised macro-, meso-, and micropores. These pores were hierarchically arranged. The pore system was created by the complex interplay of the actions of both the template and the activating agent as well. On the other hand, zeolite-made template shapes allowed for the preparation of microporous carbon monoliths with a high volumetric specific surface area. This feature could be beneficial if carbon monoliths must be integrated into technical systems under space-limited conditions.

  1. Role of guard rings in improving the performance of silicon detectors

    Indian Academy of Sciences (India)

    number of free charge carriers thus produced is proportional to the energy deposited. 259 .... grounding the innermost guard ring of a strip detector of geometry 60 × 60 mm2. ... The guard ring was kept floating with no electrical connection .... ment of maintaining high-quality semiconductor properties during high temperature.

  2. Growth techniques for monolithic YBCO solenoidal magnets

    International Nuclear Information System (INIS)

    Scruggs, S.J.; Putman, P.T.; Fang, H.; Alessandrini, M.; Salama, K.

    2006-01-01

    The possibility of growing large single domain YBCO solenoids by the use of a large seed has been investigated. There are two known methods for producing a similar solenoid. This first is a conventional top seeded melt growth process followed by a post processing machining step to create the bore. The second involves using multiple seeds spaced around the magnet bore. The appeal of the new technique lies in decreasing processing time compared to the single seed technique, while avoiding alignment problems found in the multiple seeding technique. By avoiding these problems, larger diameter monoliths can be produced. Large diameter monoliths are beneficial because the maximum magnetic field produced by a trapped field magnet is proportional to the radius of the sample. Furthermore, the availability of trapped field magnets with large diameter could enable their use in applications that traditionally have been considered to require wound electromagnets, such as beam bending magnets for particle accelerators or electric propulsion. A comparison of YBCO solenoids grown by the use of a large seed and grown by the use of two small seeds simulating multiple seeding is made. Trapped field measurements as well as microstructure evaluation were used in characterization of each solenoid. Results indicate that high quality growth occurs only in the vicinity of the seeds for the multiple seeded sample, while the sample with the large seeded exhibited high quality growth throughout the entire sample

  3. Growth techniques for monolithic YBCO solenoidal magnets

    Energy Technology Data Exchange (ETDEWEB)

    Scruggs, S.J. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States)]. E-mail: Sscruggs2@uh.edu; Putman, P.T. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Fang, H. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Alessandrini, M. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Salama, K. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States)

    2006-10-01

    The possibility of growing large single domain YBCO solenoids by the use of a large seed has been investigated. There are two known methods for producing a similar solenoid. This first is a conventional top seeded melt growth process followed by a post processing machining step to create the bore. The second involves using multiple seeds spaced around the magnet bore. The appeal of the new technique lies in decreasing processing time compared to the single seed technique, while avoiding alignment problems found in the multiple seeding technique. By avoiding these problems, larger diameter monoliths can be produced. Large diameter monoliths are beneficial because the maximum magnetic field produced by a trapped field magnet is proportional to the radius of the sample. Furthermore, the availability of trapped field magnets with large diameter could enable their use in applications that traditionally have been considered to require wound electromagnets, such as beam bending magnets for particle accelerators or electric propulsion. A comparison of YBCO solenoids grown by the use of a large seed and grown by the use of two small seeds simulating multiple seeding is made. Trapped field measurements as well as microstructure evaluation were used in characterization of each solenoid. Results indicate that high quality growth occurs only in the vicinity of the seeds for the multiple seeded sample, while the sample with the large seeded exhibited high quality growth throughout the entire sample.

  4. Electric currents induced by twisted light in Quantum Rings.

    Science.gov (United States)

    Quinteiro, G F; Berakdar, J

    2009-10-26

    We theoretically investigate the generation of electric currents in quantum rings resulting from the optical excitation with twisted light. Our model describes the kinetics of electrons in a two-band model of a semiconductor-based mesoscopic quantum ring coupled to light having orbital angular momentum (twisted light). We find the analytical solution, which exhibits a "circular" photon-drag effect and an induced magnetization, suggesting that this system is the circular analog of that of a bulk semiconductor excited by plane waves. For realistic values of the electric field and material parameters, the computed electric current can be as large as microA; from an applied perspective, this opens new possibilities to the optical control of the magnetization in semiconductors.

  5. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  6. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  7. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  8. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  9. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  10. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  11. Translucency and Strength of High-Translucency Monolithic Zirconium-Oxide Materials

    Science.gov (United States)

    2016-05-12

    Capt Todd D. Church APPROVED: Translucency and Strength of High-Translucency Monolithic Zirconium -Oxide Materials C~t) Kraig/[ Vandewalle Date...copyrighted material in the thesis/dissertation manuscript entitled: "Translucency arid Strength of High-Translucency Monolithic Zirconium -Oxide...Translucency Monolithic Zirconium -Oxide Materials Abstract Dental materials manufacturers have developed more translucent monolithic zirconium oxide

  12. Evaluation of glycidyl methacrylate-based monolith functionalized with weak anion exchange moiety inside 0.5 mm i.d. column for liquid chromatographic separation of DNA

    Directory of Open Access Journals (Sweden)

    Aprilia Nur Tasfiyati

    2016-03-01

    Full Text Available In this study, the organic polymer monolith was developed as a weak anion exchanger column in high performance liquid chromatography for DNA separation. Methacrylate-based monolithic column was prepared in microbore silicosteel column (100 × 0.5 mm i.d. by in-situ polymerization reaction using glycidyl methacrylate as monomer; ethylene dimethacrylate as crosslinker; 1-propanol, 1,4-butanediol, and water as porogenic solvents, with the presence of initiator α,α′-azobisisobutyronitrile (AIBN. The monolith matrix was modified with diethylamine to create weak anion exchanger via ring opening reaction of epoxy groups. The morphology of the monolithic column was studied by SEM. The properties of the monolithic column, such as permeability, mechanical stability, binding capacity and pore size distribution, were characterized in detail. From the results of the characterization, monoliths poly-(GMA-co-EDMA with total monomer percentage (%T 40 and crosslinker percentage (%C 25 was found to be the ideal composition of monomer and crosslinker. It has good mechanical stability and high permeability, adequate molecular recognition sites (represented with binding capacity value of 36 mg ml−1, and has relatively equal proportion of flow-through pore and mesopores (37.2% and 41.1% respectively. Poly-(GMA-co-EDMA with %T 40 and %C 25 can successfully separate oligo(dT12–18 and 50 bp DNA ladder with good resolution.

  13. Biomimetic small peptide functionalized affinity monoliths for monoclonal antibody purification.

    Science.gov (United States)

    Wang, Xiangyu; Xia, Donghai; Han, Hai; Peng, Kun; Zhu, Peijie; Crommen, Jacques; Wang, Qiqin; Jiang, Zhengjin

    2018-08-09

    The rapid development of monoclonal antibodies (mAbs) in therapeutic and diagnostic applications has necessitated the advancement of mAbs purification technologies. In this study, a biomimetic small peptide ligand 3,5-di-tert-butyl-4-hydroxybenzoic acid-Arg-Arg-Gly (DAAG) functionalized monolith was fabricated through a metal ion chelation-based multi-step approach. The resulting monolith showed good chromatographic performance. Compared with the Ni 2+ based IMAC monolith, the DAAG functionalized monolith exhibited not only excellent specificity but also higher dynamic binding capacity (DBC). The 10% DBC and 50% DBC for hIgG reached as high values as 26.0 and 34.6 mg/mL, respectively, at a ligand density of 8.8 μmol/mL, due to the high porosity and accessibility of the monolithic matrix. Moreover, the stability of the DAAG functionalized monolith in successive breakthrough experiments indicates that it has a promising potential for long-term use in mAbs purification. Finally, the DAAG functionalized monolith was successfully applied to the purification of trastuzumab or human immunoglobulin G (hIgG) from biological samples. Copyright © 2018 Elsevier B.V. All rights reserved.

  14. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  15. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  16. Rings in drugs.

    Science.gov (United States)

    Taylor, Richard D; MacCoss, Malcolm; Lawson, Alastair D G

    2014-07-24

    We have analyzed the rings, ring systems, and frameworks in drugs listed in the FDA Orange Book to understand the frequency, timelines, molecular property space, and the application of these rings in different therapeutic areas and target classes. This analysis shows that there are only 351 ring systems and 1197 frameworks in drugs that came onto the market before 2013. Furthermore, on average six new ring systems enter drug space each year and approximately 28% of new drugs contain a new ring system. Moreover, it is very unusual for a drug to contain more than one new ring system and the majority of the most frequently used ring systems (83%) were first used in drugs developed prior to 1983. These observations give insight into the chemical novelty of drugs and potentially efficient ways to assess compound libraries and develop compounds from hit identification to lead optimization and beyond.

  17. Birth Control Ring

    Science.gov (United States)

    ... Health Food & Fitness Diseases & Conditions Infections Drugs & Alcohol School & Jobs Sports Expert Answers (Q&A) Staying Safe Videos for Educators Search English Español Birth Control Ring KidsHealth / For Teens / Birth Control Ring What's ...

  18. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  19. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  20. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  1. Groups, rings, modules

    CERN Document Server

    Auslander, Maurice

    2014-01-01

    This classic monograph is geared toward advanced undergraduates and graduate students. The treatment presupposes some familiarity with sets, groups, rings, and vector spaces. The four-part approach begins with examinations of sets and maps, monoids and groups, categories, and rings. The second part explores unique factorization domains, general module theory, semisimple rings and modules, and Artinian rings. Part three's topics include localization and tensor products, principal ideal domains, and applications of fundamental theorem. The fourth and final part covers algebraic field extensions

  2. Determining leach rates of monolithic waste forms

    International Nuclear Information System (INIS)

    Gilliam, T.M.; Dole, L.R.

    1986-01-01

    The ANS 16.1 Leach Procedure provides a conservative means of predicting long-term release from monolithic waste forms, offering a simple and relatively quick means of determining effective solid diffusion coefficients. As presented here, these coefficients can be used in a simple model to predict maximum release rates or be used in more complex site-specific models to predict actual site performance. For waste forms that pass the structural integrity test, this model also allows the prediction of EP-Tox leachate concentrations from these coefficients. Thus, the results of the ANS 16.1 Leach Procedure provide a powerful tool that can be used to predict the waste concentration limits in order to comply with the EP-Toxicity criteria for characteristically nonhazardous waste. 12 refs., 3 figs

  3. Silver deposition on chemically treated carbon monolith

    Directory of Open Access Journals (Sweden)

    Jovanović Zoran M.

    2009-01-01

    Full Text Available Carbon monolith was treated with HNO3, KOH and H2O2. Effects of these treatments on the surface functional groups and on the amount of silver deposited on the CM surface were studied by temperature programmed desorption (TPD and atomic absorption spectrometry (AAS. As a result of chemical treatment there was an increase in the amount of surface oxygen complexes. The increase in the amount of silver deposit is proportional to the amount of surface groups that produce CO under decomposition. However, the high amount of CO groups, decomposing above 600°C, induces the smaller Ag crystallite size. Therefore, the high temperature CO evolving oxides are, most likely, the initial centers for Ag deposition.

  4. Monolithic microwave integrated circuit water vapor radiometer

    Science.gov (United States)

    Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.

    1991-01-01

    A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.

  5. Present status of the MONOLITH project

    International Nuclear Information System (INIS)

    Petrukhin, A.A.

    2001-01-01

    MONOLITH is a proposed massive (34 kt) magnetized tracking calorimeter at the Gran Sasso laboratory in Italy, optimized for the detection of atmospheric muon neutrinos. The main goal is to establish (or reject) the neutrino oscillation hypothesis through an explicit observation of the full first oscillation swing. The Δm 2 sensitivity range for this measurement comfortably covers the complete Super-Kamiokande allowed region. Other measurements include studies of matter effects, the NC up/down ratio, ν bar / ν ratio, the study of cosmic ray muons in the multi-TeV range, and auxiliary measurements from the CERN to Gran Sasso neutrino beam. Depending on approval, data taking with the part of the detector could start towards the end of 2004

  6. Monolithic fuel injector and related manufacturing method

    Science.gov (United States)

    Ziminsky, Willy Steve [Greenville, SC; Johnson, Thomas Edward [Greenville, SC; Lacy, Benjamin [Greenville, SC; York, William David [Greenville, SC; Stevenson, Christian Xavier [Greenville, SC

    2012-05-22

    A monolithic fuel injection head for a fuel nozzle includes a substantially hollow vesicle body formed with an upstream end face, a downstream end face and a peripheral wall extending therebetween, an internal baffle plate extending radially outwardly from a downstream end of the bore, terminating short of the peripheral wall, thereby defining upstream and downstream fuel plenums in the vesicle body, in fluid communication by way of a radial gap between the baffle plate and the peripheral wall. A plurality of integral pre-mix tubes extend axially through the upstream and downstream fuel plenums in the vesicle body and through the baffle plate, with at least one fuel injection hole extending between each of the pre-mix tubes and the upstream fuel plenum, thereby enabling fuel in the upstream plenum to be injected into the plurality of pre-mix tubes. The fuel injection head is formed by direct metal laser sintering.

  7. Bioinspired Synthesis of Monolithic and Layered Aerogels.

    Science.gov (United States)

    Han, Xiao; Hassan, Khalil T; Harvey, Alan; Kulijer, Dejan; Oila, Adrian; Hunt, Michael R C; Šiller, Lidija

    2018-04-25

    Aerogels are the least dense and most porous materials known to man, with potential applications from lightweight superinsulators to smart energy materials. To date their use has been seriously hampered by their synthesis methods, which are laborious and expensive. Taking inspiration from the life cycle of the damselfly, a novel ambient pressure-drying approach is demonstrated in which instead of employing low-surface-tension organic solvents to prevent pore collapse during drying, sodium bicarbonate solution is used to generate pore-supporting carbon dioxide in situ, significantly reducing energy, time, and cost in aerogel production. The generic applicability of this readily scalable new approach is demonstrated through the production of granules, monoliths, and layered solids with a number of precursor materials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Electronic properties of superlattices on quantum rings.

    Science.gov (United States)

    da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

    2017-04-26

    We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

  9. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    Science.gov (United States)

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  10. Catalytic Oxidation of Cyanogen Chloride over a Monolithic Oxidation Catalyst

    National Research Council Canada - National Science Library

    Campbell, Jeffrey

    1997-01-01

    The catalytic oxidation of cyanogen chloride was evaluated over a monolithic oxidation catalyst at temperatures between 200 and 300 deg C in air employing feed concentrations between 100 and 10,000 ppm...

  11. Effect of accelerated aging on translucency of monolithic zirconia

    Directory of Open Access Journals (Sweden)

    O. Abdelbary

    2016-12-01

    Conclusion: Thickness of zirconia has significant effect on translucency. Aging has significant effect on thinner sections of zirconia. More research is required on zirconia towards making the material more translucent for its potential use as esthetic monolithic restoration.

  12. Microchip-based monolithic column for high performance liquid chromatography

    Data.gov (United States)

    National Aeronautics and Space Administration — We have developed microchip based monolithic columns that can be used for liquid chromatography of small organic molecules, as well as, macromolecules such as...

  13. Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

    Energy Technology Data Exchange (ETDEWEB)

    Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin; Blasi, Benedikt; Eisenlohr, Johannes; Kohlstadt, Markus; Lee, Seunghun; Mastroianni, Simone; Mundt, Laura; Mundus, Markus; Ndione, Paul; Reichel, Christian; Schubert, Martin; Schulze, Patricia S.; Tucher, Nico; Veit, Clemens; Veurman, Welmoed; Wienands, Karl; Winkler, Kristina; Wurfel, Uli; Glunz, Stefan W.; Hermle, Martin

    2016-11-14

    For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

  14. Shear bond strength of indirect composite material to monolithic zirconia.

    Science.gov (United States)

    Sari, Fatih; Secilmis, Asli; Simsek, Irfan; Ozsevik, Semih

    2016-08-01

    This study aimed to evaluate the effect of surface treatments on bond strength of indirect composite material (Tescera Indirect Composite System) to monolithic zirconia (inCoris TZI). Partially stabilized monolithic zirconia blocks were cut into with 2.0 mm thickness. Sintered zirconia specimens were divided into different surface treatment groups: no treatment (control), sandblasting, glaze layer & hydrofluoric acid application, and sandblasting + glaze layer & hydrofluoric acid application. The indirect composite material was applied to the surface of the monolithic zirconia specimens. Shear bond strength value of each specimen was evaluated after thermocycling. The fractured surface of each specimen was examined with a stereomicroscope and a scanning electron microscope to assess the failure types. The data were analyzed using one-way analysis of variance (ANOVA) and Tukey LSD tests (α=.05). Bond strength was significantly lower in untreated specimens than in sandblasted specimens (Pcomposite material and monolithic zirconia.

  15. Reliability Analysis and Optimal Design of Monolithic Vertical Wall Breakwaters

    DEFF Research Database (Denmark)

    Sørensen, John Dalsgaard; Burcharth, Hans F.; Christiani, E.

    1994-01-01

    Reliability analysis and reliability-based design of monolithic vertical wall breakwaters are considered. Probabilistic models of the most important failure modes, sliding failure, failure of the foundation and overturning failure are described . Relevant design variables are identified...

  16. Plant oil-based shape memory polymer using acrylic monolith

    Directory of Open Access Journals (Sweden)

    T. Tsujimoto

    2015-09-01

    Full Text Available This article deals with the synthesis of a plant oil-based material using acrylic monolith. An acrylic monolith bearing oxirane groups was prepared via simple technique that involved the dissolution of poly(glycidyl methacrylate-comethyl methacrylate (PGMA in ethanolic – aqueous solution by heating and subsequent cooling. The PGMA monolith had topologically porous structure, which was attributed to the phase separation of the polymer solution. The PGMA monolith was impregnated by epoxidized soybean oil (ESO containing thermally-latent catalyst, and the subsequent curing produced a crosslinked material with relatively good transparency. The Young’s modulus and the tensile strength of polyESO/PGMA increased compared with the ESO homopolymer. The strain at break of polyESO/PGMA was larger than that of the ESO homopolymer and crosslinked PGMA. Furthermore, polyESO/PGMA exhibited good shape memory-recovery behavior.

  17. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  18. Towards a Technique for Extracting Microservices from Monolithic Enterprise Systems

    OpenAIRE

    Levcovitz, Alessandra; Terra, Ricardo; Valente, Marco Tulio

    2016-01-01

    The idea behind microservices architecture is to develop a single large, complex application as a suite of small, cohesive, independent services. On the other way, monolithic systems get larger over the time, deviating from the intended architecture, and becoming risky and expensive to evolve. This paper describes a technique to identify and define microservices on monolithic enterprise systems. As the major contribution, our evaluation shows that our approach was able to identify relevant ca...

  19. Translucency and Strength of High Translucency Monolithic Zirconium Oxide Materials

    Science.gov (United States)

    2016-05-17

    Zirconium -Oxide Materials presented at/published to the Journal of General Dentistry with MDWI 41-108, and has been assigned local file #16208. 2...Zirconia-Oxide Materials 6. TITLE OF MATERIAL TO BE PUBLISHED OR PRESENTED: Translucency and Strength of High-Translucency Monolithic Zirconium -Oxide...OBSOLETE 48. DATE Page 3 of 3 Pages Translucency and Strength of High-Translucency Monolithic Zirconium -Oxide Materials Abstract Dental materials

  20. Microwaves integrated circuits: hybrids and monolithics - fabrication technology

    International Nuclear Information System (INIS)

    Cunha Pinto, J.K. da

    1983-01-01

    Several types of microwave integrated circuits are presented together with comments about technologies and fabrication processes; advantages and disadvantages in their utilization are analysed. Basic structures, propagation modes, materials used and major steps in the construction of hybrid thin film and monolithic microwave integrated circuits are described. Important technological applications are revised and main activities of the microelectronics lab. of the University of Sao Paulo (Brazil) in the field of hybrid and monolithic microwave integrated circuits are summarized. (C.L.B.) [pt

  1. Extended Leach Testing of Simulated LAW Cast Stone Monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Serne, R. Jeffrey [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Westsik, Joseph H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jung, H. B. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wang, Guohui [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-07-09

    This report describes the results from long-term laboratory leach tests performed at Pacific Northwest National Laboratory (PNNL) for Washington River Protection Solutions (WRPS) to evaluate the release of key constituents from monoliths of Cast Stone prepared with four simulated low-activity waste (LAW) liquid waste streams. Specific objectives of the Cast Stone long-term leach tests described in this report focused on four activities: 1. Extending the leaching times for selected ongoing EPA-1315 tests on monoliths made with LAW simulants beyond the conventional 63-day time period up to 609 days reported herein (with some tests continuing that will be documented later) in an effort to evaluate long-term leaching properties of Cast Stone to support future performance assessment activities. 2. Starting new EPA-1315 leach tests on archived Cast Stone monoliths made with four LAW simulants using two leachants (deionized water [DIW] and simulated Hanford Integrated Disposal Facility (IDF) Site vadose zone pore water [VZP]). 3. Evaluating the impacts of varying the iodide loading (starting iodide concentrations) in one LAW simulant (7.8 M Na Hanford Tank Waste Operations Simulator (HTWOS) Average) by manufacturing new Cast Stone monoliths and repeating the EPA-1315 leach tests using DIW and the VZP leachants. 4. Evaluating the impacts of using a non-pertechnetate form of Tc that is present in some Hanford tanks. In this activity one LAW simulant (7.8 M Na HTWOS Average) was spiked with a Tc(I)-tricarbonyl gluconate species and then solidified into Cast Stone monoliths. Cured monoliths were leached using the EPA-1315 leach protocol with DIW and VZP. The leach results for the Tc-Gluconate Cast Stone monoliths were compared to Cast Stone monoliths pertechnetate.

  2. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  3. Nano-Doped Monolithic Materials for Molecular Separation

    Directory of Open Access Journals (Sweden)

    Caleb Acquah

    2017-01-01

    Full Text Available Monoliths are continuous adsorbents that can easily be synthesised to possess tuneable meso-/macropores, convective fluid transport, and a plethora of chemistries for ligand immobilisation. They are grouped into three main classes: organic, inorganic, and hybrid, based on their chemical composition. These classes may also be differentiated by their unique morphological and physicochemical properties which are significantly relevant to their specific separation applications. The potential applications of monoliths for molecular separation have created the need to enhance their characteristic properties including mechanical strength, electrical conductivity, and chemical and thermal stability. An effective approach towards monolith enhancement has been the doping and/or hybridization with miniaturized molecular species of desirable functionalities and characteristics. Nanoparticles are usually preferred as dopants due to their high solid phase dispersion features which are associated with improved intermolecular adsorptive interactions. Examples of such nanomaterials include, but are not limited to, carbon-based, silica-based, gold-based, and alumina nanoparticles. The incorporation of these nanoparticles into monoliths via in situ polymerisation and/or post-modification enhances surface adsorption for activation and ligand immobilisation. Herein, insights into the performance enhancement of monoliths as chromatographic supports by nanoparticles doping are presented. In addition, the potential and characteristics of less common nanoparticle materials such as hydroxyapatite, ceria, hafnia, and germania are discussed. The advantages and challenges of nanoparticle doping of monoliths are also discussed.

  4. Mechanically stable, hierarchically porous Cu3(btc)2 (HKUST-1) monoliths via direct conversion of copper(II) hydroxide-based monoliths.

    Science.gov (United States)

    Moitra, Nirmalya; Fukumoto, Shotaro; Reboul, Julien; Sumida, Kenji; Zhu, Yang; Nakanishi, Kazuki; Furukawa, Shuhei; Kitagawa, Susumu; Kanamori, Kazuyoshi

    2015-02-28

    The synthesis of highly crystalline macro-meso-microporous monolithic Cu3(btc)2 (HKUST-1; btc(3-) = benzene-1,3,5-tricarboxylate) is demonstrated by direct conversion of Cu(OH)2-based monoliths while preserving the characteristic macroporous structure. The high mechanical strength of the monoliths is promising for possible applications to continuous flow reactors.

  5. Electrostatically confined quantum rings in bilayer graphene.

    Science.gov (United States)

    Zarenia, M; Pereira, J M; Peeters, F M; Farias, G A

    2009-12-01

    We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field (B(0)) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a B(0) --> -B(0) transformation and, for a fixed total angular momentum index m, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anticrossings, which arise due to the overlap of gate-confined and magnetically confined states.

  6. Analysis of Monolith Cores from an Engineering Scale Demonstration of a Prospective Cast Stone Process

    International Nuclear Information System (INIS)

    Crawford, C. L.; Cozzi, A. D.; Hill, K. A.

    2016-01-01

    The primary disposition path of Low Activity Waste (LAW) at the DOE Hanford Site is vitrification. A cementitious waste form is one of the alternatives being considered for the supplemental immobilization of the LAW that will not be treated by the primary vitrification facility. Washington River Protection Solutions (WRPS) has been directed to generate and collect data on cementitious or pozzolanic waste forms such as Cast Stone. This report documents the coring and leach testing of monolithic samples cored from an engineering-scale demonstration (ES Demo) with non-radioactive simulants. The ES Demo was performed at SRNL in October of 2013 using the Scaled Continuous Processing Facility (SCPF) to fill an 8.5 ft. diameter x 3.25 ft. high container with simulated Cast Stone grout. The Cast Stone formulation was chosen from the previous screening tests. Legacy salt solution from previous Hanford salt waste testing was adjusted to correspond to the average LAW composition generated from the Hanford Tank Waste Operation Simulator (HTWOS). The dry blend materials, ordinary portland cement (OPC), Class F fly ash, and ground granulated blast furnace slag (GGBFS or BFS), were obtained from Lafarge North America in Pasco, WA. In 2014 core samples originally obtained approximately six months after filling the ES Demo were tested along with bench scale molded samples that were collected during the original pour. A latter set of core samples were obtained in late March of 2015, eighteen months after completion of the original ES Demo. Core samples were obtained using a 2'' diameter x 11'' long coring bit. The ES Demo was sampled in three different regions consisting of an outer ring, a middle ring and an inner core zone. Cores from these three lateral zones were further segregated into upper, middle and lower vertical segments. Monolithic core samples were tested using the Environmental Protection Agency (EPA) Method 1315, which is designed to provide mass

  7. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  8. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  9. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  10. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  11. Monolithic CMOS imaging x-ray spectrometers

    Science.gov (United States)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  12. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  13. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  14. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  15. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  16. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  17. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  18. A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

    Science.gov (United States)

    Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

    2017-07-01

    We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

  19. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  20. Token Ring Project

    Directory of Open Access Journals (Sweden)

    Adela Ionescu

    2007-01-01

    Full Text Available Ring topology is a simple configuration used to connect processes that communicate among themselves. A number of network standards such as token ring, token bus, and FDDI are based on the ring connectivity. This article will develop an implementation of a ring of processes that communicate among themselves via pipe links. The processes are nodes in the ring. Each process reads from its standard input and writes in its standard output. N-1 process redirects the its standard output to a standard input of the process through a pipe. When the ring-structure is designed, the project can be extended to simulate networks or to implement algorithms for mutual exclusion

  1. Token ring technology report

    CERN Document Server

    2013-01-01

    Please note this is a Short Discount publication. This report provides an overview of the IBM Token-Ring technology and products built by IBM and compatible vendors. It consists of two sections: 1. A summary of the design trade-offs for the IBM Token-Ring. 2. A summary of the products of the major token-ring compatible vendors broken down by adapters and components, wiring systems, testing, and new chip technology.

  2. Radioactive gold ring dermatitis

    International Nuclear Information System (INIS)

    Miller, R.A.; Aldrich, J.E.

    1990-01-01

    A superficial squamous cell carcinoma developed in a woman who wore a radioactive gold ring for more than 30 years. Only part of the ring was radioactive. Radiation dose measurements indicated that the dose to basal skin layer was 2.4 Gy (240 rad) per week. If it is assumed that the woman continually wore her wedding ring for 37 years since purchase, she would have received a maximum dose of approximately 4600 Gy

  3. Properties of glass-bonded zeolite monoliths

    International Nuclear Information System (INIS)

    Lewis, M.A.; Fischer, D.F.; Murphy, C.D.

    1994-01-01

    It has been shown that mineral waste forms can be used to immobilize waste salt generated during the pyrochemical processing of spent fuel from the Integral Fast Reactor (IFR). Solid, leach resistant monoliths were formed by hot-pressing mixtures of salt-occluded zeolite A powders and glass frit at 990 K and 28 MPa. Additional samples have now been fabricated and tested. Normalized release rates for all elements, including iodide and chloride, were less than 1 g/m 2 d in 28-day tests in deionized water and in brine at 363 K (90 degrees C). Preliminary results indicate that these rates fall with time with both leachants and that the zeolite phase in the glass-bonded zeolite does not function as an ion exchanger. Some material properties were measured. The Poisson ratio and Young's modulus were slightly smaller in glass-bonded zeolite than in borosilicate glass. Density depended on zeolite fraction. The glass-bonded zeolite represents a promising mineral waste form for IFR salt

  4. Neutron spectrometry with a monolithic silicon telescope.

    Science.gov (United States)

    Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

    2007-01-01

    A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

  5. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  6. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  7. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  8. Electron localization and optical absorption of polygonal quantum rings

    Science.gov (United States)

    Sitek, Anna; Serra, Llorenç; Gudmundsson, Vidar; Manolescu, Andrei

    2015-06-01

    We investigate theoretically polygonal quantum rings and focus mostly on the triangular geometry where the corner effects are maximal. Such rings can be seen as short core-shell nanowires, a generation of semiconductor heterostructures with multiple applications. We show how the geometry of the sample determines the electronic energy spectrum, and also the localization of electrons, with effects on the optical absorption. In particular, we show that irrespective of the ring shape low-energy electrons are always attracted by corners and are localized in their vicinity. The absorption spectrum in the presence of a magnetic field shows only two peaks within the corner-localized state domain, each associated with different circular polarization. This picture may be changed by an external electric field which allows previously forbidden transitions, and thus enables the number of corners to be determined. We show that polygonal quantum rings allow absorption of waves from distant ranges of the electromagnetic spectrum within one sample.

  9. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  10. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  11. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  12. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  13. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1983-09-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technologie or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented

  14. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1984-01-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technology or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented. (author)

  15. Advanced Gasification Mercury/Trace Metal Control with Monolith Traps

    Energy Technology Data Exchange (ETDEWEB)

    Musich, Mark; Swanson, Michael; Dunham, Grant; Stanislowski, Joshua

    2010-10-05

    Two Corning monoliths and a non-carbon-based material have been identified as potential additives for mercury capture in syngas at temperatures above 400°F and pressure of 600 psig. A new Corning monolith formulation, GR-F1-2189, described as an active sample appeared to be the best monolith tested to date. The Corning SR Liquid monolith concept continues to be a strong candidate for mercury capture. Both monolith types allowed mercury reduction to below 5-μg/m{sup 3} (~5 ppb), a current U.S. Department of Energy (DOE) goal for trace metal control. Preparation methods for formulating the SR Liquid monolith impacted the ability of the monolith to capture mercury. The Energy & Environmental Research Center (EERC)-prepared Noncarbon Sorbents 1 and 2 appeared to offer potential for sustained and significant reduction of mercury concentration in the simulated fuel gas. The Noncarbon Sorbent 1 allowed sustained mercury reduction to below 5-μg/m{sup 3} (~5 ppb). The non-carbon-based sorbent appeared to offer the potential for regeneration, that is, desorption of mercury by temperature swing (using nitrogen and steam at temperatures above where adsorption takes place). A Corning cordierite monolith treated with a Group IB metal offered limited potential as a mercury sorbent. However, a Corning carbon-based monolith containing prereduced metallic species similar to those found on the noncarbon sorbents did not exhibit significant or sustained mercury reduction. EERC sorbents prepared with Group IB and IIB selenide appeared to have some promise for mercury capture. Unfortunately, these sorbents also released Se, as was evidenced by the measurement of H2Se in the effluent gas. All sorbents tested with arsine or hydrogen selenide, including Corning monoliths and the Group IB and IIB metal-based materials, showed an ability to capture arsine or hydrogen selenide at 400°F and 600 psig. Based on current testing, the noncarbon metal-based sorbents appear to be the most

  16. ADVANCED GASIFICATION MERCURY/TRACE METAL CONTROL WITH MONOLITH TRAPS

    Energy Technology Data Exchange (ETDEWEB)

    Mark A. Musich; Michael L. Swanson; Grant E. Dunham; Joshua J. Stanislowski

    2010-07-31

    Two Corning monoliths and a non-carbon-based material have been identified as potential additives for mercury capture in syngas at temperatures above 400°F and pressure of 600 psig. A new Corning monolith formulation, GR-F1-2189, described as an active sample appeared to be the best monolith tested to date. The Corning SR Liquid monolith concept continues to be a strong candidate for mercury capture. Both monolith types allowed mercury reduction to below 5-μg/m3 (~5 ppb), a current U.S. Department of Energy (DOE) goal for trace metal control. Preparation methods for formulating the SR Liquid monolith impacted the ability of the monolith to capture mercury. The Energy & Environmental Research Center (EERC)-prepared Noncarbon Sorbents 1 and 2 appeared to offer potential for sustained and significant reduction of mercury concentration in the simulated fuel gas. The Noncarbon Sorbent 1 allowed sustained mercury reduction to below 5-μg/m3 (~5 ppb). The non-carbon-based sorbent appeared to offer the potential for regeneration, that is, desorption of mercury by temperature swing (using nitrogen and steam at temperatures above where adsorption takes place). A Corning cordierite monolith treated with a Group IB metal offered limited potential as a mercury sorbent. However, a Corning carbon-based monolith containing prereduced metallic species similar to those found on the noncarbon sorbents did not exhibit significant or sustained mercury reduction. EERC sorbents prepared with Group IB and IIB selenide appeared to have some promise for mercury capture. Unfortunately, these sorbents also released Se, as was evidenced by the measurement of H2Se in the effluent gas. All sorbents tested with arsine or hydrogen selenide, including Corning monoliths and the Group IB and IIB metal-based materials, showed an ability to capture arsine or hydrogen selenide at 400°F and 600 psig. Based on current testing, the noncarbon metal-based sorbents appear to be the most effective arsine

  17. Workshop on compact storage ring technology: applications to lithography

    International Nuclear Information System (INIS)

    1986-01-01

    Project planning in the area of x-ray lithography is discussed. Three technologies that are emphasized are the light source, the lithographic technology, and masking technology. The needs of the semiconductor industry in the lithography area during the next decade are discussed, particularly as regards large scale production of high density dynamic random access memory devices. Storage ring parameters and an overall exposure tool for x-ray lithography are addressed. Competition in this area of technology from Germany and Japan is discussed briefly. The design of a storage ring is considered, including lattice design, magnets, and beam injection systems

  18. Edge chipping and flexural resistance of monolithic ceramics☆

    Science.gov (United States)

    Zhang, Yu; Lee, James J.-W.; Srikanth, Ramanathan; Lawn, Brian R.

    2014-01-01

    Objective Test the hypothesis that monolithic ceramics can be developed with combined esthetics and superior fracture resistance to circumvent processing and performance drawbacks of traditional all-ceramic crowns and fixed-dental-prostheses consisting of a hard and strong core with an esthetic porcelain veneer. Specifically, to demonstrate that monolithic prostheses can be produced with a much reduced susceptibility to fracture. Methods Protocols were applied for quantifying resistance to chipping as well as resistance to flexural failure in two classes of dental ceramic, microstructurally-modified zirconias and lithium disilicate glass–ceramics. A sharp indenter was used to induce chips near the edges of flat-layer specimens, and the results compared with predictions from a critical load equation. The critical loads required to produce cementation surface failure in monolithic specimens bonded to dentin were computed from established flexural strength relations and the predictions validated with experimental data. Results Monolithic zirconias have superior chipping and flexural fracture resistance relative to their veneered counterparts. While they have superior esthetics, glass–ceramics exhibit lower strength but higher chip fracture resistance relative to porcelain-veneered zirconias. Significance The study suggests a promising future for new and improved monolithic ceramic restorations, with combined durability and acceptable esthetics. PMID:24139756

  19. Preparation of polyhedral oligomeric silsesquioxane based imprinted monolith.

    Science.gov (United States)

    Li, Fang; Chen, Xiu-Xiu; Huang, Yan-Ping; Liu, Zhao-Sheng

    2015-12-18

    Polyhedral oligomeric silsesquioxane (POSS) was successfully applied, for the first time, to prepare imprinted monolithic column with high porosity and good permeability. The imprinted monolithic column was synthesized with a mixture of PSS-(1-Propylmethacrylate)-heptaisobutyl substituted (MA 0702), naproxon (template), 4-vinylpyridine, and ethylene glycol dimethacrylate, in ionic liquid 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4). The influence of synthesis parameters on the retention factor and imprinting effect, including the amount of MA 0702, the ratio of template to monomer, and the ratio of monomer to crosslinker, was investigated. The greatest imprinting factor on the imprinted monolithic column prepared with MA 0702 was 22, about 10 times higher than that prepared in absence of POSS. The comparisons between MIP monoliths synthesized with POSS and without POSS were made in terms of permeability, column efficiency, surface morphology and pore size distribution. In addition, thermodynamic and Van Deemter analysis were used to evaluate the POSS-based MIP monolith. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Aspartic acid incorporated monolithic columns for affinity glycoprotein purification.

    Science.gov (United States)

    Armutcu, Canan; Bereli, Nilay; Bayram, Engin; Uzun, Lokman; Say, Rıdvan; Denizli, Adil

    2014-02-01

    Novel aspartic acid incorporated monolithic columns were prepared to efficiently affinity purify immunoglobulin G (IgG) from human plasma. The monolithic columns were synthesised in a stainless steel HPLC column (20 cm × 5 mm id) by in situ bulk polymerisation of N-methacryloyl-L-aspartic acid (MAAsp), a polymerisable derivative of L-aspartic acid, and 2-hydroxyethyl methacrylate (HEMA). Monolithic columns [poly(2-hydroxyethyl methacrylate-N-methacryloyl-L-aspartic acid) (PHEMAsp)] were characterised by swelling studies, Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The monolithic columns were used for IgG adsorption/desorption from aqueous solutions and human plasma. The IgG adsorption depended on the buffer type, and the maximum IgG adsorption from aqueous solution in phosphate buffer was 0.085 mg/g at pH 6.0. The monolithic columns allowed for one-step IgG purification with a negligible capacity decrease after ten adsorption-desorption cycles. Copyright © 2013 Elsevier B.V. All rights reserved.

  1. EBT ring physics

    International Nuclear Information System (INIS)

    Uckan, N.A.

    1980-04-01

    This workshop attempted to evaluate the status of the current experimental and theoretical understanding of hot electron ring properties. The dominant physical processes that influence ring formation, scaling, and their optimal behavior are also studied. Separate abstracts were prepared for each of the 27 included papers

  2. Monolithic View of Galaxy Formation and Evolution

    Directory of Open Access Journals (Sweden)

    Cesare Chiosi

    2014-07-01

    Full Text Available We review and critically discuss the current understanding of galaxy formation and evolution limited to Early Type Galaxies (ETGs as inferred from the observational data and briefly contrast the hierarchical and quasi-monolithic paradigms of formation and evolution. Since in Cold Dark Matter (CDM cosmogony small scale structures typically collapse early and form low-mass haloes that subsequently can merge to assembly larger haloes, galaxies formed in the gravitational potential well of a halo are also expected to merge thus assembling their mass hierarchically. Mergers should occur all over the Hubble time and large mass galaxies should be in place only recently. However, recent observations of high redshift galaxies tell a different story: massive ETGs are already in place at high redshift. To this aim, we propose here a revision of the quasi-monolithic scenario as an alternative to the hierarchical one, in which mass assembling should occur in early stages of a galaxy lifetime and present recent models of ETGs made of Dark and Baryonic Matter in a Λ-CDM Universe that obey the latter scheme. The galaxies are followed from the detachment from the linear regime and Hubble flow at z ≥ 20 down to the stage of nearly complete assembly of the stellar content (z ∼ 2 − 1 and beyond.  It is found that the total mass (Mh = MDM + MBM and/or initial over-density of the proto-galaxy drive the subsequent star formation histories (SFH. Massive galaxies (Mh ~ _1012M⊙ experience a single, intense burst of star formation (with rates ≥ 103M⊙/yr at early epochs, consistently with observations, with a weak dependence on the initial over-density; intermediate mass haloes (Mh~_ 1010 − 1011M⊙ have star formation histories that strongly depend on their initial over-density; finally, low mass haloes (Mh ~_ 109M⊙ always have erratic, burst-like star forming histories. The present-day properties (morphology, structure, chemistry and photometry of the

  3. Monolithic Chip-Integrated Absorption Spectrometer from 3-5 microns, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A monolithically integrated indium phosphide (InP) to silicon-on-sapphire (SoS) platform is being proposed for a monolithic portable or handheld spectrometer between...

  4. CHARACTERIZATION OF MONOLITHIC FUEL FOIL PROPERTIES AND BOND STRENGTH

    International Nuclear Information System (INIS)

    D E Burkes; D D Keiser; D M Wachs; J S Larson; M D Chapple

    2007-01-01

    Understanding fuel foil mechanical properties, and fuel/cladding bond quality and strength in monolithic plates is an important area of investigation and quantification. Specifically, what constitutes an acceptable monolithic fuel--cladding bond, how are the properties of the bond measured and determined, and what is the impact of fabrication process or change in parameters on the level of bonding? Currently, non-bond areas are quantified employing ultrasonic determinations that are challenging to interpret and understand in terms of irradiation impact. Thus, determining mechanical properties of the fuel foil and what constitutes fuel/cladding non-bonds is essential to successful qualification of monolithic fuel plates. Capabilities and tests related to determination of these properties have been implemented at the INL and are discussed, along with preliminary results

  5. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure

    OpenAIRE

    Sun, Xiaoxia; Uyama, Hiroshi

    2013-01-01

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructu...

  6. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  7. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  8. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  9. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  10. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  11. Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.

    Science.gov (United States)

    Schuster, Fabian; Kapraun, Jonas; Malheiros-Silveira, Gilliard N; Deshpande, Saniya; Chang-Hasnain, Connie J

    2017-04-12

    In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO 2 nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.

  12. Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO2 gas sensor applications

    International Nuclear Information System (INIS)

    Hoa, Nguyen Duc; Duy, Nguyen Van; Hieu, Nguyen Van

    2013-01-01

    Graphical abstract: Display Omitted Highlights: ► Mesoporous WO 3 nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO 3 sensor exhibited a high performance to NO 2 gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxide (NO 2 ) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO 2 . In addition, the developed sensor exhibited selective detection of low NO 2 concentration in ammonia and ethanol at a low temperature of approximately 150 °C.

  13. On the Laurent polynomial rings

    International Nuclear Information System (INIS)

    Stefanescu, D.

    1985-02-01

    We describe some properties of the Laurent polynomial rings in a finite number of indeterminates over a commutative unitary ring. We study some subrings of the Laurent polynomial rings. We finally obtain two cancellation properties. (author)

  14. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  16. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  17. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  18. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  20. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  1. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  2. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  3. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    DEFF Research Database (Denmark)

    Forsén, Esko Sebastian; Abadal, G.; Ghatnekar-Nilsson, S.

    2005-01-01

    Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions...... and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic...

  4. Numerical Simulation of Fluid Dynamics in a Monolithic Column

    Directory of Open Access Journals (Sweden)

    Kazuhiro Yamamoto

    2017-01-01

    Full Text Available As for the measurement of polycyclic aromatic hydrocarbons (PAHs, ultra-performance liquid chromatography (UPLC is used for PAH identification and densitometry. However, when a solvent containing a substance to be identified passes through a column of UPLC, a dedicated high-pressure-proof device is required. Recently, a liquid chromatography instrument using a monolithic column technology has been proposed to reduce the pressure of UPLC. The present study tested five types of monolithic columns produced in experiments. To simulate the flow field, the lattice Boltzmann method (LBM was used. The velocity profile was discussed to decrease the pressure drop in the ultra-performance liquid chromatography (UPLC system.

  5. Paladin Enterprises: Monolithic particle physics models global climate.

    CERN Multimedia

    2002-01-01

    Paladin Enterprises presents a monolithic particle model of the universe which will be used by them to build an economical fusion energy system. The model is an extension of the work done by James Clerk Maxwell. Essentially, gravity is unified with electro-magnetic forces and shown to be a product of a closed loop current system, i.e. a particle - monolithic or sub atomic. This discovery explains rapid global climate changes which are evident in the geological record and also provides an explanation for recent changes in the global climate.

  6. Heavy ion storage rings

    International Nuclear Information System (INIS)

    Schuch, R.

    1987-01-01

    A brief overview of synchrotron storage rings for heavy ions, which are presently under construction in different accelerator laboratories is given. Ions ranging from protons up to uranium ions at MeV/nucleon energies will be injected into these rings using multiturn injection from the accelerators available or being built in these laboratories. After injection, it is planned to cool the phase space distribution of the ions by merging them with cold electron beams or laser beams, or by using stochastic cooling. Some atomic physics experiments planned for these rings are presented. 35 refs

  7. Faithfully quadratic rings

    CERN Document Server

    Dickmann, M

    2015-01-01

    In this monograph the authors extend the classical algebraic theory of quadratic forms over fields to diagonal quadratic forms with invertible entries over broad classes of commutative, unitary rings where -1 is not a sum of squares and 2 is invertible. They accomplish this by: (1) Extending the classical notion of matrix isometry of forms to a suitable notion of T-isometry, where T is a preorder of the given ring, A, or T = A^2. (2) Introducing in this context three axioms expressing simple properties of (value) representation of elements of the ring by quadratic forms, well-known to hold in

  8. A High Resolution Monolithic Crystal, DOI, MR Compatible, PET Detector. Final-Report

    International Nuclear Information System (INIS)

    Miyaoka, Robert S.

    2012-01-01

    The principle objective of this proposal is to develop a positron emission tomography (PET) detector with depth-of-interaction (DOI) positioning capability that will achieve state of the art spatial resolution and sensitivity performance for small animal PET imaging. When arranged in a ring or box detector geometry, the proposed detector module will support 15% absolute detection efficiency. The detector will also be compatible with operation in a MR scanner to support simultaneous multi-modality imaging. The detector design will utilize a thick, monolithic crystal scintillator readout by a two-dimensional array of silicon photomultiplier (SiPM) devices using a novel sensor on the entrance surface (SES) design. Our hypothesis is that our single-ended readout SES design will provide an effective DOI positioning performance equivalent to more expensive dual-ended readout techniques and at a significantly lower cost. Our monolithic crystal design will also lead to a significantly lower cost system. It is our goal to design a detector with state of the art performance but at a price point that is affordable so the technology can be disseminated to many laboratories. A second hypothesis is that using SiPM arrays, the detector will be able to operate in a MR scanner without any degradation in performance to support simultaneous PET/MR imaging. Having a co-registered MR image will assist in radiotracer localization and may also be used for partial volume corrections to improve radiotracer uptake quantitation. The far reaching goal of this research is to develop technology for medical research that will lead to improvements in human health care.

  9. Constitutive Theory Developed for Monolithic Ceramic Materials

    Science.gov (United States)

    Janosik, Lesley A.

    1998-01-01

    with these service conditions by developing a multiaxial viscoplastic constitutive model that accounts for time-dependent hereditary material deformation (such as creep and stress relaxation) in monolithic structural ceramics. Using continuum principles of engineering mechanics, we derived the complete viscoplastic theory from a scalar dissipative potential function.

  10. Polyurea-Based Aerogel Monoliths and Composites

    Science.gov (United States)

    Lee, Je Kyun

    2012-01-01

    aerogel insulation material was developed that will provide superior thermal insulation and inherent radiation protection for government and commercial applications. The rubbery polyureabased aerogel exhibits little dustiness, good flexibility and toughness, and durability typical of the parent polyurea polymer, yet with the low density and superior insulation properties associated with aerogels. The thermal conductivity values of polyurea-based aerogels at lower temperature under vacuum pressures are very low and better than that of silica aerogels. Flexible, rubbery polyurea-based aerogels are able to overcome the weak and brittle nature of conventional inorganic and organic aerogels, including polyisocyanurate aerogels, which are generally prepared with the one similar component to polyurethane rubber aerogels. Additionally, with higher content of hydrogen in their structures, the polyurea rubber-based aerogels will also provide inherently better radiation protection than those of inorganic and carbon aerogels. The aerogel materials also demonstrate good hydrophobicity due to their hydrocarbon molecular structure. There are several strategies to overcoming the drawbacks associated with the weakness and brittleness of silica aerogels. Development of the flexible fiber-reinforced silica aerogel composite blanket has proven to be one promising approach, providing a conveniently fielded form factor that is relatively robust in industrial environments compared to silica aerogel monoliths. However, the flexible, silica aerogel composites still have a brittle, dusty character that may be undesirable, or even intolerable, in certain application environments. Although the cross - linked organic aerogels, such as resorcinol- formaldehyde (RF), polyisocyanurate, and cellulose aerogels, show very high impact strength, they are also very brittle with little elongation (i.e., less rubbery). Also, silica and carbon aerogels are less efficient radiation shielding materials due

  11. On arbitrarily graded rings

    Indian Academy of Sciences (India)

    58

    paper is devoted to the study of arbitrary rings graded through arbitrary sets. .... which recover certain multiplicative relations among the homogeneous components ... instance the case in which the grading set A is an Abelian group, where the ...

  12. The g-2 ring

    CERN Multimedia

    1974-01-01

    The precise measurement of "g-2", the anomalous magnetic moment of the muon, required a special muon storage ring with electrostatic focussing and very accurate knowledge of the magnetic bending field. For more details see under photo 7405430.

  13. [Liesegang's rings resembling helminthiasis].

    Science.gov (United States)

    Zámecník, M; Riedl, I

    1996-12-01

    So called Liesegang's rings are lamellar corpuscles which develop after periodical precipitation of oversaturated solutions in gel medium. They can occur in cysts, closed cavities, inflammatory exudates and necroses. They resemble parasitic eggs, larvae or adult forms. A case of 28-year-old woman is presented with many Liesegang's rings in a stuff from dilated renal calyx. Their preliminary evaluation considered helminths, especially Dioctophyma renale.

  14. Storage ring group summary

    International Nuclear Information System (INIS)

    King, N.M.

    1980-01-01

    The Storage Ring Group set out to identify and pursue salient problems in accelerator physics for heavy ion fusion, divorced from any particular reference design concept. However, it became apparent that some basic parameter framework was required to correlate the different study topics. As the Workshop progressed, ring parameters were modified and updated. Consequently, the accompanying papers on individual topics will be found to refer to slightly varied parameters, according to the stage at which the different problems were tackled

  15. The rings of Uranus

    Science.gov (United States)

    Elliot, J. L.; Dunham, E.; Mink, D.

    1977-01-01

    A description is given of the observation of five brief occultations of the star SAO 158687 which occurred both before and after its occultation by Uranus on March 10, 1977. The events were observed with a three-channel occultation photometer, attached to a 91-cm telescope. The observations indicate that at least five rings encircle the planet Uranus. Possible reasons for the narrowness of the Uranus rings are discussed.

  16. Irregular Aharonov–Bohm effect for interacting electrons in a ZnO quantum ring

    International Nuclear Information System (INIS)

    Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

    2017-01-01

    The electronic states and optical transitions of a ZnO quantum ring containing few interacting electrons in an applied magnetic field are found to be very different from those in a conventional semiconductor system, such as a GaAs ring. The strong Zeeman interaction and the Coulomb interaction of the ZnO system, two important characteristics of the electron system in ZnO, exert a profound influence on the electron states and on the optical properties of the ring. In particular, our results indicate that the Aharonov–Bohm (AB) effect in a ZnO quantum ring strongly depends on the electron number. In fact, for two electrons in the ZnO ring, the AB oscillations become aperiodic, while for three electrons (interacting) the AB oscillations completely disappear. Therefore, unlike in conventional quantum ring topology, here the AB effect (and the resulting persistent current) can be controlled by varying the electron number. (paper)

  17. Vernier effect-based multiplication of the Sagnac beating frequency in ring laser gyroscope sensors

    Science.gov (United States)

    Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

    2018-02-01

    A multiplication method of the Sagnac effect scale factor in ring laser gyroscopes is presented based on the Vernier effect of a dual-coupler passive ring resonator coupled to the active ring. The multiplication occurs when the two rings have comparable lengths or integer multiples and their scale factors have opposite signs. In this case, and when the rings have similar areas, the scale factor is multiplied by ratio of their length to their length difference. The scale factor of the presented configuration is derived analytically and the lock-in effect is analyzed. The principle is demonstrated using optical fiber rings and semiconductor optical amplifier as gain medium. A scale factor multiplication by about 175 is experimentally measured, demonstrating larger than two orders of magnitude enhancement in the Sagnac effect scale factor for the first time in literature, up to the authors' knowledge.

  18. Development and characterization of methacrylate-based hydrazide monoliths for oriented immobilization of antibodies.

    Science.gov (United States)

    Brne, P; Lim, Y-P; Podgornik, A; Barut, M; Pihlar, B; Strancar, A

    2009-03-27

    Convective interaction media (CIM; BIA Separations) monoliths are attractive stationary phases for use in affinity chromatography because they enable fast affinity binding, which is a consequence of convectively enhanced mass transport. This work focuses on the development of novel CIM hydrazide (HZ) monoliths for the oriented immobilization of antibodies. Adipic acid dihydrazide (AADH) was covalently bound to CIM epoxy monoliths to gain hydrazide groups on the monolith surface. Two different antibodies were afterwards immobilized to hydrazide functionalized monolithic columns and prepared columns were tested for their selectivity. One column was further tested for the dynamic binding capacity.

  19. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  20. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus

    1976-01-01

    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  1. Comparison of monolithic silica and polymethacrylate capillary columns for LC

    Czech Academy of Sciences Publication Activity Database

    Moravcová, D.; Jandera, P.; Urban, J.; Planeta, Josef

    2004-01-01

    Roč. 27, 10-11 (2004), s. 789-800 ISSN 1615-9306 R&D Projects: GA ČR(CZ) GA203/02/0023 Keywords : monolithic column s * capillary HPLC * column testing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 1.927, year: 2004

  2. Characterization of polymer monolithic stationary phases for capillary HPLC

    Czech Academy of Sciences Publication Activity Database

    Moravcová, D.; Jandera, P.; Urban, J.; Planeta, Josef

    2003-01-01

    Roč. 26, č. 11 (2003), s. 1005-1016 ISSN 1615-9306 R&D Projects: GA ČR GA203/02/0023 Institutional research plan: CEZ:AV0Z4031919; CEZ:MSM 253100002 Keywords : monolithic column s * capillary HPLC * column testing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 2.108, year: 2003

  3. Integration trends in monolithic power ICs: Application and technology challenges

    NARCIS (Netherlands)

    Rose, M.; Bergveld, H.J.

    2016-01-01

    This paper highlights the general trend towards further monolithic integration in power applications by enabling power management and interfacing solutions in advanced CMOS nodes. The need to combine high-density digital circuits, power-management circuits, and robust interfaces in a single

  4. Monolithic Yb-fiber femtosecond laser using photonic crystal fiber

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2008-01-01

    We demonstrate, both experimentally and theoretically, an environmentally stable monolithic all-PM modelocked femtosecond Yb-fiber laser, with laser output pulse compressed in a spliced-on low-loss hollow-core photonic crystal fiber. Our laser provides direct fiber-end delivery of 4 nJ pulses...

  5. High density fuels using dispersion and monolithic fuel

    International Nuclear Information System (INIS)

    Gomes, Daniel S.; Silva, Antonio T.; Abe, Alfredo Y.; Muniz, Rafael O.R.; Giovedi, Claudia; Universidade de São Paulo

    2017-01-01

    Fuel plates used in high-performance research reactors need to be converted to low-enrichment uranium fuel; the fuel option based on a monolithic formulation requires alloys to contain 6 - 10 wt% Mo. In this case, the fuel plates are composed of the metallic alloy U-10Mo surrounded by a thin zirconium layer encapsulated in aluminum cladding. This study reviewed the physical properties of monolithic forms. The constraints produced during the manufacturing process were analyzed and compared to those of dispersed fuel. The bonding process used for dispersion fuels differs from the techniques applied to foil bonding used for pure alloys. The quality of monolithic plates depends on the fabrication method, which usually involves hot isostatic pressing and the thermal annealing effect of residual stress, which degrades the uranium cubic phase. The preservation of the metastable phase has considerable influence on fuel performance. The physical properties of the foil fuel under irradiation are superior to those of aluminum-dispersed fuels. The fuel meat, using zirconium as the diffusion barrier, prevents the interaction layer from becoming excessively thick. The problem with dispersed fuel is breakaway swelling with a medium fission rate. It has been observed that the fuel dispersed in aluminum was minimized in monolithic forms. The pure alloys exhibited a suitable response from a rate at least twice as much as the fission rate of dispersions. The foils can support fissile material concentration combined with a reduced swelling rate. (author)

  6. A 60-GHz rectenna for monolithic wireless sensor tags

    NARCIS (Netherlands)

    Gao, H.; Johannsen, U.; Matters - Kammerer, M.; Milosevic, D.; Smolders, A.B.; Roermund, van A.H.M.; Baltus, P.G.M.

    2013-01-01

    This paper presents the design of a 60-GHz rectenna with an on-chip antenna and rectifier in 65nm CMOS technology. The rectenna is often the bottleneck in realizing a fully-integrated monolithic wireless sensor tag. In this paper, problems of the mm-wave rectifier are discussed, and the

  7. High density fuels using dispersion and monolithic fuel

    Energy Technology Data Exchange (ETDEWEB)

    Gomes, Daniel S.; Silva, Antonio T.; Abe, Alfredo Y.; Muniz, Rafael O.R.; Giovedi, Claudia, E-mail: dsgomes@ipen.br, E-mail: teixeira@ipen.br, E-mail: alfredo@ctmsp.mar.mil.br, E-mail: rafael.orm@gmail.com, E-mail: claudia.giovedi@ctmsp.mar.mil.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Universidade de São Paulo (USP), SP (Brazil). Departamento de Engenharia Naval e Oceânica

    2017-07-01

    Fuel plates used in high-performance research reactors need to be converted to low-enrichment uranium fuel; the fuel option based on a monolithic formulation requires alloys to contain 6 - 10 wt% Mo. In this case, the fuel plates are composed of the metallic alloy U-10Mo surrounded by a thin zirconium layer encapsulated in aluminum cladding. This study reviewed the physical properties of monolithic forms. The constraints produced during the manufacturing process were analyzed and compared to those of dispersed fuel. The bonding process used for dispersion fuels differs from the techniques applied to foil bonding used for pure alloys. The quality of monolithic plates depends on the fabrication method, which usually involves hot isostatic pressing and the thermal annealing effect of residual stress, which degrades the uranium cubic phase. The preservation of the metastable phase has considerable influence on fuel performance. The physical properties of the foil fuel under irradiation are superior to those of aluminum-dispersed fuels. The fuel meat, using zirconium as the diffusion barrier, prevents the interaction layer from becoming excessively thick. The problem with dispersed fuel is breakaway swelling with a medium fission rate. It has been observed that the fuel dispersed in aluminum was minimized in monolithic forms. The pure alloys exhibited a suitable response from a rate at least twice as much as the fission rate of dispersions. The foils can support fissile material concentration combined with a reduced swelling rate. (author)

  8. Dopamine-imprinted monolithic column for capillary electrochromatography.

    Science.gov (United States)

    Aşır, Süleyman; Sarı, Duygu; Derazshamshir, Ali; Yılmaz, Fatma; Şarkaya, Koray; Denizli, Adil

    2017-11-01

    A dopamine-imprinted monolithic column was prepared and used in capillary electrochromatography as stationary phase for the first time. Dopamine was selectively separated from aqueous solution containing the competitor molecule norepinephrine, which is similar in size and shape to the template molecule. Morphology of the dopamine-imprinted column was observed by scanning electron microscopy. The influence of the organic solvent content of mobile phase, applied pressure and pH of the mobile phase on the recognition of dopamine by the imprinted monolithic column has been evaluated, and the imprinting effect in the dopamine-imprinted monolithic polymer was verified. Developed dopamine-imprinted monolithic column resulted in excellent separation of dopamine from structurally related competitor molecule, norepinephrine. Separation was achieved in a short period of 10 min, with the electrophoretic mobility of 5.81 × 10 -5  m 2 V -1 s -1 at pH 5.0 and 500 mbar pressure. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. A Monolithically-Integrated μGC Chemical Sensor System

    Directory of Open Access Journals (Sweden)

    Davor Copic

    2011-06-01

    Full Text Available Gas chromatography (GC is used for organic and inorganic gas detection with a range of applications including screening for chemical warfare agents (CWA, breath analysis for diagnostics or law enforcement purposes, and air pollutants/indoor air quality monitoring of homes and commercial buildings. A field-portable, light weight, low power, rapid response, micro-gas chromatography (μGC system is essential for such applications. We describe the design, fabrication and packaging of mGC on monolithically-integrated Si dies, comprised of a preconcentrator (PC, μGC column, detector and coatings for each of these components. An important feature of our system is that the same mechanical micro resonator design is used for the PC and detector. We demonstrate system performance by detecting four different CWA simulants within 2 min. We present theoretical analyses for cost/power comparisons of monolithic versus hybrid μGC systems. We discuss thermal isolation in monolithic systems to improve overall performance. Our monolithically-integrated μGC, relative to its hybrid cousin, will afford equal or slightly lower cost, a footprint that is 1/2 to 1/3 the size and an improved resolution of 4 to 25%.

  10. Environmentally Benign Production of Stretchable and Robust Superhydrophobic Silicone Monoliths.

    Science.gov (United States)

    Davis, Alexander; Surdo, Salvatore; Caputo, Gianvito; Bayer, Ilker S; Athanassiou, Athanassia

    2018-01-24

    Superhydrophobic materials hold an enormous potential in sectors as important as aerospace, food industries, or biomedicine. Despite this great promise, the lack of environmentally friendly production methods and limited robustness remain the two most pertinent barriers to the scalability, large-area production, and widespread use of superhydrophobic materials. In this work, highly robust superhydrophobic silicone monoliths are produced through a scalable and environmentally friendly emulsion technique. It is first found that stable and surfactantless water-in-polydimethylsiloxane (PDMS) emulsions can be formed through mechanical mixing. Increasing the internal phase fraction of the precursor emulsion is found to increase porosity and microtexture of the final monoliths, rendering them superhydrophobic. Silica nanoparticles can also be dispersed in the aqueous internal phase to create micro/nanotextured monoliths, giving further improvements in superhydrophobicity. Due to the elastomeric nature of PDMS, superhydrophobicity can be maintained even while the material is mechanically strained or compressed. In addition, because of their self-similarity, the monoliths show outstanding robustness to knife-scratch, tape-peel, and finger-wipe tests, as well as rigorous sandpaper abrasion. Superhydrophobicity was also unchanged when exposed to adverse environmental conditions including corrosive solutions, UV light, extreme temperatures, and high-energy droplet impact. Finally, important properties for eventual adoption in real-world applications including self-cleaning, stain-repellence, and blood-repellence are demonstrated.

  11. Study of monolithic prestressed reinforced concrete overhead road.

    Directory of Open Access Journals (Sweden)

    Ya.I. Kovalchyk

    2011-12-01

    Full Text Available Results of inspection and testing of monolithic prestressed reinforced concrete road trestle built in Kyiv are considered. The analysis of the gained results has shown that parametres correspond to the requirements of current standards on design of bridges.

  12. Field-effect piezoresistors for vibration detection of nanobeams by using monolithically integrated MOS capacitors

    International Nuclear Information System (INIS)

    Cheng, Haitao; Yang, Heng; Li, XinXin; Wang, Yuelin

    2013-01-01

    A novel piezoresistive sensing method is presented herein for the detection of nanobeam resonator based on a monolithically integrated MOS (metal–oxide–semiconductor) capacitor structure. The bottom layer of the nanobeam located beneath the MOS capacitor is utilized as a piezoresistor for the detection of internal stress resulting from nanobeam deformation, and therefore the challenging process of ultra-shallow junction doping is avoided. When a bias voltage applied on the MOS gate exceeds the threshold, the depletion layer width is built up to the maximum, and the piezoresistive cancellation effect beside the neutral plane is eliminated. Based on a conventional microelectromechanical (MEMS) process, an MOS capacitor is fabricated at the terminal of a double-clamped nanobeam with dimensions of 46 µm × 7 µm × 149 nm. The measured R–V curve of this MOS structure presents a 64.7 nm thick piezoresistor which closely agrees with the design. This double-clamped nanobeam is excited into mechanical resonance by mounting it on a piezoelectric ceramic, and the amplitude–frequency response is measured by a network analyzer. The measured resonant frequency is 3.97 MHz and the quality (Q)-factor is 82 in atmosphere environment. Besides, this piezoresistive sensing method is verified by a laser-Doppler vibrometry. (paper)

  13. Development of monolithic pixel detector with SOI technology for the ILC vertex detector

    Science.gov (United States)

    Yamada, M.; Ono, S.; Tsuboyama, T.; Arai, Y.; Haba, J.; Ikegami, Y.; Kurachi, I.; Togawa, M.; Mori, T.; Aoyagi, W.; Endo, S.; Hara, K.; Honda, S.; Sekigawa, D.

    2018-01-01

    We have been developing a monolithic pixel sensor for the International Linear Collider (ILC) vertex detector with the 0.2 μm FD-SOI CMOS process by LAPIS Semiconductor Co., Ltd. We aim to achieve a 3 μm single-point resolution required for the ILC with a 20×20 μm2 pixel. Beam bunch crossing at the ILC occurs every 554 ns in 1-msec-long bunch trains with an interval of 200 ms. Each pixel must record the charge and time stamp of a hit to identify a collision bunch for event reconstruction. Necessary functions include the amplifier, comparator, shift register, analog memory and time stamp implementation in each pixel, and column ADC and Zero-suppression logic on the chip. We tested the first prototype sensor, SOFIST ver.1, with a 120 GeV proton beam at the Fermilab Test Beam Facility in January 2017. SOFIST ver.1 has a charge sensitive amplifier and two analog memories in each pixel, and an 8-bit Wilkinson-type ADC is implemented for each column on the chip. We measured the residual of the hit position to the reconstructed track. The standard deviation of the residual distribution fitted by a Gaussian is better than 3 μm.

  14. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

    Science.gov (United States)

    Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B

    2017-02-14

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

  15. LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs

    Directory of Open Access Journals (Sweden)

    Tingyou Lin

    2017-06-01

    Full Text Available This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs. An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM methodology is developed to balance the channel temperature based on the quantization. The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET bank to reduce its power dissipation and heat generation. A test chip with eight parallel MOSFET banks is fabricated in TSMC 0.25 μm HV BCD processes, and total area is 900 × 914 μm2. The maximal temperature variation among the eight banks can reduce to 2.8 °C by the proposed thermal balancing system from 9.5 °C with 1.5 W dissipation. As a result, our proposed system improves the lifetime of a power MOSFET by 20%.

  16. A monolithic constant-fraction discriminator using distributed R-C delay-line shaping

    International Nuclear Information System (INIS)

    Simpson, M.L.; Young, G.R.; Xu, M.

    1995-01-01

    A monolithic, CMOS, constant-fraction discriminator (CFD) was fabricated in the Orbit Semiconductor, 1.2 μ N-well process. This circuit uses an on-chip, distributed, R-C delay-line to realize the constant-fraction shaping. The delay-line is constructed from a narrow, 500-μ serpentine layer of polysilicon above a wide, grounded, second layer of polysilicon. This R-C delay-line generates about 1.1 ns of delay for 5 ns risetime signals with a slope degradation of only ≅ 15% and an amplitude reduction of about 6.1%. The CFD also features an automatic walk adjustment. The entire circuit, including the delay line, has a 200 μ pitch and is 950 μ long. The walk for a 5 ns risetime signal was measured as ± 100 ps over the 100:1 dynamic range from -15 mV to -1.5 mV. to -1.5 V. The CFD consumes 15 mW

  17. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  18. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  19. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  20. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  1. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  2. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  3. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    Science.gov (United States)

    2014-01-01

    ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

  4. Optimal control of quantum rings by terahertz laser pulses.

    Science.gov (United States)

    Räsänen, E; Castro, A; Werschnik, J; Rubio, A; Gross, E K U

    2007-04-13

    Complete control of single-electron states in a two-dimensional semiconductor quantum-ring model is established, opening a path into coherent laser-driven single-gate qubits. The control scheme is developed in the framework of optimal-control theory for laser pulses of two-component polarization. In terms of pulse lengths and target-state occupations, the scheme is shown to be superior to conventional control methods that exploit Rabi oscillations generated by uniform circularly polarized pulses. Current-carrying states in a quantum ring can be used to manipulate a two-level subsystem at the ring center. Combining our results, we propose a realistic approach to construct a laser-driven single-gate qubit that has switching times in the terahertz regime.

  5. Some Aspects of Ring Theory

    CERN Document Server

    Herstein, IN

    2011-01-01

    S. Amitsur: Associative rings with identities.- I.N. Herstein: Topics in ring theory.- N. Jacobson: Representation theory of Jordan algebras.- I. Kaplansky: The theory of homological dimension.- D. Buchsbaum: Complexes in local ring theory.- P.H. Cohn: Two topics in ring theory.- A.W. Goldie: Non-commutative localisation.

  6. Ring correlations in random networks.

    Science.gov (United States)

    Sadjadi, Mahdi; Thorpe, M F

    2016-12-01

    We examine the correlations between rings in random network glasses in two dimensions as a function of their separation. Initially, we use the topological separation (measured by the number of intervening rings), but this leads to pseudo-long-range correlations due to a lack of topological charge neutrality in the shells surrounding a central ring. This effect is associated with the noncircular nature of the shells. It is, therefore, necessary to use the geometrical distance between ring centers. Hence we find a generalization of the Aboav-Weaire law out to larger distances, with the correlations between rings decaying away when two rings are more than about three rings apart.

  7. Mapping Ring Particle Cooling across Saturn's Rings with Cassini CIRS

    Science.gov (United States)

    Brooks, Shawn M.; Spilker, L. J.; Edgington, S. G.; Pilorz, S. H.; Deau, E.

    2010-10-01

    Previous studies have shown that the rings' thermal inertia, a measure of their response to changes in the thermal environment, varies from ring to ring. Thermal inertia can provide insight into the physical structure of Saturn's ring particles and their regoliths. Low thermal inertia and quick temperature responses are suggestive of ring particles that have more porous or fluffy regoliths or that are riddled with cracks. Solid, coherent particles can be expected to have higher thermal inertias (Ferrari et al. 2005). Cassini's Composite Infrared Spectrometer has recorded millions of spectra of Saturn's rings since its arrival at Saturn in 2004 (personal communication, M. Segura). CIRS records far infrared radiation between 10 and 600 cm-1 (16.7 and 1000 µm) at focal plane 1 (FP1), which has a field of view of 3.9 mrad. Thermal emission from Saturn's rings peaks in this wavelength range. FP1 spectra can be used to infer ring temperatures. By tracking how ring temperatures vary, we can determine the thermal inertia of the rings. In this work we focus on CIRS observations of the shadowed portion of Saturn's rings. The thermal budget of the rings is dominated by the solar radiation absorbed by its constituent particles. When ring particles enter Saturn's shadow this source of energy is abruptly cut off. As a result, ring particles cool as they traverse Saturn's shadow. From these shadow observations we can create cooling curves at specific locations across the rings. We will show that the rings' cooling curves and thus their thermal inertia vary not only from ring to ring, but by location within the individual rings. This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under contract with NASA. Copyright 2010 California Institute of Technology. Government sponsorship acknowledged.

  8. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  9. The Rings of Saturn

    Science.gov (United States)

    Cuzzi, J. N.; Filacchione, G.; Marouf, E. A.

    2018-03-01

    One could become an expert on Saturn's iconic rings pretty easily in the early 1970s, as very little was known about them beyond the distinction between the A, B, and C rings, and the Cassini Division or "gap" between rings A and B (Alexander, 1962; Bobrov, 1970). Water ice was discovered spectroscopically on the ring particle surfaces, and radar and microwave emission observations proved that the particles must be centimeters to meters in size, consisting primarily, not just superficially, of water ice (Pollack, 1975). While a 2:1 orbital resonance with Mimas had long been suspected of having something to do with the Cassini Division, computers of the time were unable to model the subtle dynamical effects that we now know to dominate ring structure. This innocent state of affairs was exploded by the Voyager 1 and 2 encounters in 1980 and 1981. Spectacular images revealed filigree structure and odd regional color variations, and exquisitely detailed radial profiles of fluctuating particle abundance were obtained from the first stellar and radio occultations, having resolution almost at the scale of single particles. Voyager-era understanding was reviewed by Cuzzi et al. (1984) and Esposito et al. (1984). While the Voyager data kept ring scientists busy for decades, planning which led to the monumentally successful NASA-ESA-ASI Cassini mission, which arrived in 2004, had been under way even before Voyager got to Saturn. A review of pre-Cassini knowledge of Saturn's Rings can be found in Orton et al. (2009). This chapter will build on recent topical and process-specific reviews that treat the gamut of ring phenomena and its underlying physics in considerable detail (Colwell et al., 2009; Cuzzi et al., 2009; Horányi et al., 2009; Schmidt et al., 2009; Esposito, 2010; Tiscareno, 2013b; Esposito, 2014). We will follow and extend the general organization of Cuzzi et al. (2010), the most recent general discussion of Saturn's rings. For brevity and the benefit of the

  10. BERKELEY: ALS ring

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1993-06-15

    Everybody at Lawrence Berkeley Laboratory's Center for Beam Physics is pleased with the rapid progress in commissioning LBL's Advanced Light Source (ALS) electron storage ring, the foundation for this third-generation synchrotron radiation facility. Designed for a maximum current of 400 mA, the ALS storage ring reached 407 mA just 24 days after storing the first beam on 16 March. ALS construction as a US Department of Energy (DOE) national user facility to provide high-brightness vacuum ultra-violet and soft x-ray radiation began in October 1987. One technical requirement marking project completion was to accumulate a 50-mA current in the storage ring. The ALS passed this milestone on 24 March, a week ahead of the official deadline. Once injected, the electron beam decays quasi-exponentially primarily because of interactions with residual gas molecules in the storage-ring vacuum chamber. Eventually, when the pressure in the vacuum chamber with beam decreases toward the expected operating level of 1 nano Torr, it will only be necessary to refill the storage ring at intervals of four to eight hours. At present the vacuum is improving rapidly as surfaces are irradiated (scrubbed) by the synchrotron radiation itself. At 100 mA, beam lifetime was about one hour (9 April)

  11. Compressible Vortex Ring

    Science.gov (United States)

    Elavarasan, Ramasamy; Arakeri, Jayawant; Krothapalli, Anjaneyulu

    1999-11-01

    The interaction of a high-speed vortex ring with a shock wave is one of the fundamental issues as it is a source of sound in supersonic jets. The complex flow field induced by the vortex alters the propagation of the shock wave greatly. In order to understand the process, a compressible vortex ring is studied in detail using Particle Image Velocimetry (PIV) and shadowgraphic techniques. The high-speed vortex ring is generated from a shock tube and the shock wave, which precedes the vortex, is reflected back by a plate and made to interact with the vortex. The shadowgraph images indicate that the reflected shock front is influenced by the non-uniform flow induced by the vortex and is decelerated while passing through the vortex. It appears that after the interaction the shock is "split" into two. The PIV measurements provided clear picture about the evolution of the vortex at different time interval. The centerline velocity traces show the maximum velocity to be around 350 m/s. The velocity field, unlike in incompressible rings, contains contributions from both the shock and the vortex ring. The velocity distribution across the vortex core, core diameter and circulation are also calculated from the PIV data.

  12. BERKELEY: ALS ring

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    Everybody at Lawrence Berkeley Laboratory's Center for Beam Physics is pleased with the rapid progress in commissioning LBL's Advanced Light Source (ALS) electron storage ring, the foundation for this third-generation synchrotron radiation facility. Designed for a maximum current of 400 mA, the ALS storage ring reached 407 mA just 24 days after storing the first beam on 16 March. ALS construction as a US Department of Energy (DOE) national user facility to provide high-brightness vacuum ultra-violet and soft x-ray radiation began in October 1987. One technical requirement marking project completion was to accumulate a 50-mA current in the storage ring. The ALS passed this milestone on 24 March, a week ahead of the official deadline. Once injected, the electron beam decays quasi-exponentially primarily because of interactions with residual gas molecules in the storage-ring vacuum chamber. Eventually, when the pressure in the vacuum chamber with beam decreases toward the expected operating level of 1 nano Torr, it will only be necessary to refill the storage ring at intervals of four to eight hours. At present the vacuum is improving rapidly as surfaces are irradiated (scrubbed) by the synchrotron radiation itself. At 100 mA, beam lifetime was about one hour (9 April)

  13. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  14. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  15. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  16. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  17. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  18. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  19. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  20. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  1. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  2. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  3. Almost ring theory

    CERN Document Server

    2003-01-01

    This book develops thorough and complete foundations for the method of almost etale extensions, which is at the basis of Faltings' approach to p-adic Hodge theory. The central notion is that of an "almost ring". Almost rings are the commutative unitary monoids in a tensor category obtained as a quotient V-Mod/S of the category V-Mod of modules over a fixed ring V; the subcategory S consists of all modules annihilated by a fixed ideal m of V, satisfying certain natural conditions. The reader is assumed to be familiar with general categorical notions, some basic commutative algebra and some advanced homological algebra (derived categories, simplicial methods). Apart from these general prerequisites, the text is as self-contained as possible. One novel feature of the book - compared with Faltings' earlier treatment - is the systematic exploitation of the cotangent complex, especially for the study of deformations of almost algebras.

  4. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  5. Compact electron storage rings

    International Nuclear Information System (INIS)

    Williams, G.P.

    1987-01-01

    There have been many recent developments in the area of compact storage rings. Such rings would have critical wavelengths of typically 10 A, achieved with beam energies of several hundreds of MeV and superconducting dipole fields of around 5 Tesla. Although the primary motivation for progress in this area is that of commercial x-ray lithography, such sources might be an attractive source for college campuses to operate. They would be useful for many programs in materials science, solid state, x-ray microscopy and other biological areas. We discuss the properties of such sources and review developments around the world, primarily in the USA, japan and W. Germany

  6. The covariant chiral ring

    Energy Technology Data Exchange (ETDEWEB)

    Bourget, Antoine; Troost, Jan [Laboratoire de Physique Théorique, École Normale Supérieure, 24 rue Lhomond, 75005 Paris (France)

    2016-03-23

    We construct a covariant generating function for the spectrum of chiral primaries of symmetric orbifold conformal field theories with N=(4,4) supersymmetry in two dimensions. For seed target spaces K3 and T{sup 4}, the generating functions capture the SO(21) and SO(5) representation theoretic content of the chiral ring respectively. Via string dualities, we relate the transformation properties of the chiral ring under these isometries of the moduli space to the Lorentz covariance of perturbative string partition functions in flat space.

  7. Vortex and source rings

    DEFF Research Database (Denmark)

    Branlard, Emmanuel Simon Pierre

    2017-01-01

    The velocity field, vector potential and velocity gradient of a vortex ring is derived in this chapter. The Biot-Savart law for the vector potential and velocity is expressed in a first section. Then, the flow is derived at specific locations: on the axis, near the axis and in the far field where...... the analogy to a doublet field is made. The following section derive the value of the vector potential and velocity field in the full domain. The expression for the velocity gradient is also provided since it may be relevant in a simulation with vortex particles and vortex rings. Most of this chapter...

  8. The Saturnian rings

    International Nuclear Information System (INIS)

    Alfven, H.

    1975-09-01

    The structure of the Saturnian rings is traditionally believed to be due to resonances caused by Mimas (and possibly other satellites). It is shown that both theoretical and observational evidence rule out this interpretation. The increased observational accuracy on one hand and the increased understanding of the cosmogonic processes on the other makes it possible to explain the structure of the ring system as a product of condensation from a partially corotating plasma. In certain respects the agreement between theory and observations is about 1%. (Auth.)

  9. RINGED ACCRETION DISKS: INSTABILITIES

    Energy Technology Data Exchange (ETDEWEB)

    Pugliese, D.; Stuchlík, Z., E-mail: d.pugliese.physics@gmail.com, E-mail: zdenek.stuchlik@physics.cz [Institute of Physics and Research Centre of Theoretical Physics and Astrophysics, Faculty of Philosophy and Science, Silesian University in Opava, Bezručovo náměstí 13, CZ-74601 Opava (Czech Republic)

    2016-04-01

    We analyze the possibility that several instability points may be formed, due to the Paczyński mechanism of violation of mechanical equilibrium, in the orbiting matter around a supermassive Kerr black hole. We consider a recently proposed model of a ringed accretion disk, made up by several tori (rings) that can be corotating or counter-rotating relative to the Kerr attractor due to the history of the accretion process. Each torus is governed by the general relativistic hydrodynamic Boyer condition of equilibrium configurations of rotating perfect fluids. We prove that the number of the instability points is generally limited and depends on the dimensionless spin of the rotating attractor.

  10. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

    Science.gov (United States)

    Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri

    2005-08-01

    Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

  11. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  12. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  13. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  14. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  15. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  16. Fusion rings and fusion ideals

    DEFF Research Database (Denmark)

    Andersen, Troels Bak

    by the so-called fusion ideals. The fusion rings of Wess-Zumino-Witten models have been widely studied and are well understood in terms of precise combinatorial descriptions and explicit generating sets of the fusion ideals. They also appear in another, more general, setting via tilting modules for quantum......This dissertation investigates fusion rings, which are Grothendieck groups of rigid, monoidal, semisimple, abelian categories. Special interest is in rational fusion rings, i.e., fusion rings which admit a finite basis, for as commutative rings they may be presented as quotients of polynomial rings...

  17. Flushing Ring for EDM

    Science.gov (United States)

    Earwood, L.

    1985-01-01

    Removing debris more quickly lowers cutting time. Operation, cutting oil and pressurized air supplied to ring placed around workpiece. Air forces oil through small holes and agitates oil as it flows over workpiece. High flow rate and agitation dislodge and remove debris. Electrical discharge removes material from workpiece faster.

  18. Sector ring accelerator ''RESATRON''

    International Nuclear Information System (INIS)

    Schwabe, E.

    1980-01-01

    Project of sector ring accelerator RESATRON is described. The curiosity of this accelerator is the second cycle of acceleration of the beam after stripping it on the foil. In such an accelerator heavy ions with a different ratio Z to A can be accelerated. (S.B.)

  19. Ring chromosome 13

    DEFF Research Database (Denmark)

    Brandt, C A; Hertz, Jens Michael; Petersen, M B

    1992-01-01

    A stillborn male child with anencephaly and multiple malformations was found to have the karyotype 46,XY,r(13) (p11q21.1). The breakpoint at 13q21.1, determined by high resolution banding, is the most proximal breakpoint ever reported in patients with ring chromosome 13. In situ hybridisation...

  20. Ring magnetron ionizer

    International Nuclear Information System (INIS)

    Alessi, J.G.

    1986-01-01

    A ring magnetron D - charge exchange ionizer has been built and tested. An H - current of 500 μA was extracted with an estimated H 0 density in the ionizer of 10 12 cm -3 . This exceeds the performance of ionizers presently in use on polarized H - sources. The ionizer will soon be tested with a polarized atomic beam

  1. Algebras, rings and modules

    CERN Document Server

    Hazewinkel, Michiel; Kirichenko, V V

    Provides both the classical aspects of the theory of groups and their representations as well as a general introduction to the modern theory of representations, including the representations of quivers and finite partially ordered sets. This volume provides the theory of semiprime Noetherian semiperfect and semidistributive rings.

  2. Lattices for antiproton rings

    International Nuclear Information System (INIS)

    Autin, B.

    1984-01-01

    After a description of the constraints imposed by the cooling of Antiprotons on the lattice of the rings, the reasons which motivate the shape and the structure of these machines are surveyed. Linear and non-linear beam optics properties are treated with a special amplification to the Antiproton Accumulator. (orig.)

  3. Monolithic millimeter-wave and picosecond electronic technologies

    International Nuclear Information System (INIS)

    Talley, W.K.; Luhmann, N.C.

    1996-01-01

    Theoretical and experimental studies into monolithic millimeter-wave and picosecond electronic technologies have been undertaken as a collaborative project between the Lawrence Livermore National Laboratory (LLNL) and the University of California Department of Applied Science Coherent Millimeter-Wave Group under the auspices of the Laboratory Directed Research and Development Program at LLNL. The work involves the design and fabrication of monolithic frequency multiplier, beam control, and imaging arrays for millimeter-wave imaging and radar, as well as the development of high speed nonlinear transmission lines for ultra-wideband radar imaging, time domain materials characterization and magnetic fusion plasma applications. In addition, the Coherent Millimeter-Wave Group is involved in the fabrication of a state-of-the-art X-band (∼8-11 GHz) RF photoinjector source aimed at producing psec high brightness electron bunches for advanced accelerator and coherent radiation generation studies

  4. Silicon monolithic microchannel-cooled laser diode array

    International Nuclear Information System (INIS)

    Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

    2000-01-01

    A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

  5. Performance of a DOI-encoding small animal PET system with monolithic scintillators

    International Nuclear Information System (INIS)

    Carles, M.; Lerche, Ch.W.; Sánchez, F.; Orero, A.; Moliner, L.; Soriano, A.; Benlloch, J.M.

    2012-01-01

    PET systems designed for specific applications require high resolution and sensitivity instrumentation. In dedicated system design smaller ring diameters and deeper crystals are widely used in order to increase the system sensitivity. However, this design increases the parallax error, which degrades the spatial image resolution gradually from the center to the edge of the field-of-view (FOV). Our group has designed a depth of interaction(DOI)-encoding small animal PET system based on monolithic crystals. In this work we investigate the restoration of radial resolution for transaxially off-center sources using the DOI information provided by our system. For this purpose we have designed a support for point like sources adapted to our system geometry that allows a spatial compression and resolution response study. For different point source radial positions along vertical and horizontal axes of a FOV transaxial plane we compare the results obtained by three methods: without DOI information, with the DOI provided by our system and with the assumption that all the γ-rays interact at half depth of the crystal thickness. Results show an improvement of the mean resolution of 10% with the half thickness assumption and a 16% achieved using the DOI provided by the system. Furthermore, a 10% restoration of the resolution uniformity is obtained using the half depth assumption and an 18% restoration using measured DOI.

  6. Standard Test Method for Impact Resistance of Monolithic Polycarbonate Sheet by Means of a Falling Weight

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1995-01-01

    1.1 This test method covers the determination of the energy required to initiate failure in monolithic polycarbonate sheet material under specified conditions of impact using a free falling weight. 1.2 Two specimen types are defined as follows: 1.2.1 Type A consists of a flat plate test specimen and employs a clamped ring support. 1.2.2 Type B consists of a simply supported three-point loaded beam specimen (Fig. 1) and is recommended for use with material which can not be failed using the Type A specimen. For a maximum drop height of 6.096 m (20 ft) and a maximum drop weight of 22.68 kg (50 lb), virgin polycarbonate greater than 12.70 mm (1/2 in.) thick will probably require use of the Type B specimen. Note 1 - See also ASTM Methods: D 1709, D 2444 and D 3029. This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of reg...

  7. Propellers in Saturn's rings

    Science.gov (United States)

    Sremcevic, M.; Stewart, G. R.; Albers, N.; Esposito, L. W.

    2013-12-01

    Theoretical studies and simulations have demonstrated the effects caused by objects embedded in planetary rings. Even if the objects are too small to be directly observed, each creates a much larger gravitational imprint on the surrounding ring material. These strongly depend on the mass of the object and range from "S" like propeller-shaped structures for about 100m-sized icy bodies to the opening of circumferential gaps as in the case of the embedded moons Pan and Daphnis and their corresponding Encke and Keeler Gaps. Since the beginning of the Cassini mission many of these smaller objects (~data from Cassini Ultraviolet Imaging Spectrograph (UVIS) and Imaging Science Subsystem (ISS) experiments. We show evidence that B ring seems to harbor two distinct populations of propellers: "big" propellers covering tens of degrees in azimuth situated in the densest part of B ring, and "small" propellers in less dense inner B ring that are similar in size and shape to known A ring propellers. The population of "big" propellers is exemplified with a single object which is observed for 5 years of Cassini data. The object is seen as a very elongated bright stripe (40 degrees wide) in unlit Cassini images, and dark stripe in lit geometries. In total we report observing the feature in images at 18 different epochs between 2005 and 2010. In UVIS occultations we observe this feature as an optical depth depletion in 14 out of 93 occultation cuts at corrotating longitudes compatible with imaging data. Combining the available Cassini data we infer that the object is a partial gap located at r=112,921km embedded in the high optical depth region of the B ring. The gap moves at Kepler speed appropriate for its radial location. Radial offsets of the gap locations in UVIS occultations are consistent with an asymmetric propeller shape. The asymmetry of the observed shape is most likely a consequence of the strong surface mass density gradient, as the feature is located at an edge between

  8. Porous polyacrylamide monoliths in hydrophilic interaction capillary electrochromatography of oligosaccharides

    Czech Academy of Sciences Publication Activity Database

    Guryča, Vilém; Mechref, Y.; Palm, A. K.; Michálek, Jiří; Pacáková, V.; Novotny, M. V.

    2007-01-01

    Roč. 70, č. 1 (2007), s. 3-13 ISSN 0165-022X R&D Projects: GA MŠk 1M0538 Grant - others:U.S. Department of Health and Human Services(US) GM24349 Institutional research plan: CEZ:AV0Z40500505 Keywords : polyacrylamide monoliths * analytical glycobiology * capillary electrochromatography Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.338, year: 2007

  9. Improved monolithic reinforced concrete construction for nuclear power stations

    International Nuclear Information System (INIS)

    Guenther, P.; Fischer, K.

    1983-01-01

    Experience has shown that in applying monolithic reinforced concrete in nuclear power plant construction the following auxiliary means are useful: measuring sheets in assembling, welding gauges for reaching high tolerance accuracies of prefabricated reinforced concrete members, suitable lining materials, formwork anchorage and formwork release agents, concrete workability agents, mechanized procedures for finishing and assembling. These means were successfully tested in constructing the Greifswald nuclear power station

  10. Optical properties of pre-colored dental monolithic zirconia ceramics.

    Science.gov (United States)

    Kim, Hee-Kyung; Kim, Sung-Hun

    2016-12-01

    The purposes of this study were to evaluate the optical properties of recently marketed pre-colored monolithic zirconia ceramics and to compare with those of veneered zirconia and lithium disilicate glass ceramics. Various shades of pre-colored monolithic zirconia, veneered zirconia, and lithium disilicate glass ceramic specimens were tested (17.0×17.0×1.5mm, n=5). CIELab color coordinates were obtained against white, black, and grey backgrounds with a spectrophotometer. Color differences of the specimen pairs were calculated by using the CIEDE2000 (ΔE 00 ) formula. The translucency parameter (TP) was derived from ΔE 00 of the specimen against a white and a black background. X-ray diffraction was used to determine the crystalline phases of monolithic zirconia specimens. Data were analyzed with 1-way ANOVA, Scheffé post hoc, and Pearson correlation testing (α=0.05). For different shades of the same ceramic brand, there were significant differences in L * , a * , b * , and TP values in most ceramic brands. With the same nominal shade (A2), statistically significant differences were observed in L * , a * , b * , and TP values among different ceramic brands and systems (Pceramics of the corresponding nominal shades ranged beyond the acceptability threshold. Due to the high L * values and low a * and b * values, pre-colored monolithic zirconia ceramics can be used with additional staining to match neighboring restorations or natural teeth. Due to their high value and low chroma, unacceptable color mismatch with adjacent ceramic restorations might be expected. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. Monolithic femtosecond Yb-fiber laser with photonic crystal fibers

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    We demonstrate a monolithic stable SESAM-modelocked self-starting Yb-fiber laser. A novel PM all-solid photonic bandgap fiber is used for intra-cavity of dispersion management. The ex-cavity final pulse compression is performed in a spliced-on PM hollow-core photonic crystal fiber. The laser...... directly delivers 9 nJ pulses of 275 fs duration with pulse repetition of 26.7MHz....

  12. A Symmetric Positive Definite Formulation for Monolithic Fluid Structure Interaction

    Science.gov (United States)

    2010-08-09

    more likely to converge than simply iterating the partitioned approach to convergence in a simple Gauss - Seidel manner. Our approach allows the use of...conditions in a second step. These approaches can also be iterated within a given time step for increased stability, noting that in the limit if one... converges one obtains a monolithic (albeit expensive) approach. Other approaches construct strongly coupled systems and then solve them in one of several

  13. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    Science.gov (United States)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    1984-01-01

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  14. Monolithic microwave integrated circuit technology for advanced space communication

    Science.gov (United States)

    Ponchak, George E.; Romanofsky, Robert R.

    1988-01-01

    Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

  15. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    Science.gov (United States)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  16. Electroactive monolithic μchip for electrochemically-responsive chromatography

    OpenAIRE

    Power, Aoife

    2013-01-01

    The EMμ project’s focus is ultimately, the development of an electroactive monolith that can be incorporated into a microfluidic system for electroanalytical applications such as sensing and electrochemically-controlled extractions and separations. To date our have made several significant advances to achieving this end goal. Firstly a facile fabrication method which allows for the production of fully disposable, gasket–free thin–layer cells suitable for EMμ was developed. A polydimethylsilox...

  17. Extended Leach Testing of Simulated LAW Cast Stone Monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Serne, R. Jeffrey [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lanigan, David C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Westsik, Joseph H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jung, H. B. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wang, Guohui [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2016-08-12

    This revision to the original report adds two longer term leach sets of data to the report and provides more discussion and graphics on how to interpret the results from long-term laboratory leach tests. The leach tests were performed at Pacific Northwest National Laboratory (PNNL) for Washington River Protection Solutions (WRPS) to evaluate the release of key constituents from monoliths of Cast Stone prepared with four simulated low-activity waste (LAW) liquid waste streams.

  18. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  19. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  20. FUZZY RINGS AND ITS PROPERTIES

    Directory of Open Access Journals (Sweden)

    Karyati Karyati

    2017-01-01

      One of algebraic structure that involves a binary operation is a group that is defined  an un empty set (classical with an associative binary operation, it has identity elements and each element has an inverse. In the structure of the group known as the term subgroup, normal subgroup, subgroup and factor group homomorphism and its properties. Classical algebraic structure is developed to algebraic structure fuzzy by the researchers as an example semi group fuzzy and fuzzy group after fuzzy sets is introduced by L. A. Zadeh at 1965. It is inspired of writing about semi group fuzzy and group of fuzzy, a research on the algebraic structure of the ring is held with reviewing ring fuzzy, ideal ring fuzzy, homomorphism ring fuzzy and quotient ring fuzzy with its properties. The results of this study are obtained fuzzy properties of the ring, ring ideal properties fuzzy, properties of fuzzy ring homomorphism and properties of fuzzy quotient ring by utilizing a subset of a subset level  and strong level  as well as image and pre-image homomorphism fuzzy ring.   Keywords: fuzzy ring, subset level, homomorphism fuzzy ring, fuzzy quotient ring

  1. Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture

    International Nuclear Information System (INIS)

    Giubilato, P.; Battaglia, M.; Bisello, D.; Caselle, M.; Chalmet, P.; Demaria, L.; Ikemoto, Y.; Kloukinas, K.; Mansuy, S.C.; Mattiazzo, S.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Silvestrin, L.; Snoeys, W.

    2013-01-01

    The LePix projects aim realizing a new generation monolithic pixel detectors with improved performances at lesser cost with respect to both current state of the art monolithic and hybrid pixel sensors. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This allows charge collection by drift while maintaining the other advantages usually offered by MAPS, like having a single piece detector and using a standard CMOS production line. The collection by drift mechanism, coupled to the low capacitance design of the collecting node made possible by the monolithic approach, provides an excellent signal to noise ratio straight at the pixel cell together with a radiation tolerance far superior to conventional un-depleted MAPS. The excellent signal-to-noise performance is demonstrated by the device ability to separate the 6 keV 55 Fe double peak at room temperature. To achieve high granularity (10–20 µm pitch pixels) over large detector areas maintaining high readout speed, a completely new compressing architecture has been devised. This architecture departs from the mainstream hybrid pixel sparsification approach, which uses in-pixel logic to reduce data, by using topological compression to minimize pixel area and power consumption

  2. Application of monolithic polycapillary focusing optics in MXRF

    International Nuclear Information System (INIS)

    Gao, N.; Ponomarev, I.; Xiao, Q.F.; Gibson, W.M.

    1996-01-01

    A monolithic polycapillary focusing optic, consisting of hundreds of thousands of small tapered glass capillaries, can collect a large solid angle of x rays from a point source and guide them through the capillaries by multiple total reflections to form an intense focused beam. Such a focused beam has many applications in microbeam x-ray fluorescence (MXRF) analysis. Two monolithic polycapillary focusing optics were tested and characterized in a MXRF set-up using a microfocusing x-ray source (50microm x 10microm). For the Cu K α line, the measured focal spot sizes of these optics were 105microm and 43microm Full-Width-Half-Maximum (FWHM), respectively. When the source was operated at 16W, the average Cu K α intensities over the focal spots were measured to be 2.4 x 10 4 photons/s/microm 2 and 8.9 x 10 4 photons/s/microm 2 , respectively. When the authors compared the monolithic optics to straight monocapillary optics (single channel capillary) with approximately the same output beam sizes, intensity gains of 16 and 44 were obtained. The optics were applied to the MXRF set-up to analyze trace elements in various samples and a Minimum Detection Limit (MDL) of about 2 pg was achieved for the transition elements (V, Cr, Mn, and Fe). The optics were also used to map the distributions of trace elements in various samples

  3. Tannin-based monoliths from emulsion-templating

    International Nuclear Information System (INIS)

    Szczurek, A.; Martinez de Yuso, A.; Fierro, V.; Pizzi, A.; Celzard, A.

    2015-01-01

    Highlights: • Efficient preparation procedures are presented for new and “green” tannin-based organic polyHIPEs. • Highest homogeneity and strength are obtained at an oil fraction near the close-packing value. • Structural and mechanical properties abruptly change above such critical value. - Abstract: Highly porous monoliths prepared by emulsion-templating, frequently called polymerised High Internal Phase Emulsions (polyHIPEs) in the literature, were prepared from “green” precursors such as Mimosa bark extract, sunflower oil and ethoxylated castor oil. Various oil fractions, ranging from 43 to 80 vol.%, were used and shown to have a dramatic impact on the resultant porous structure. A critical oil fraction around 70 vol.% was found to exist, close to the theoretical values of 64% and 74% for random and compact sphere packing, respectively, at which the properties of both emulsions and derived porous monoliths changed. Such change of behaviour was observed by many different techniques such as viscosity, electron microscopy, mercury intrusion, and mechanical studies. We show and explain why this critical oil fraction is the one leading to the strongest and most homogeneous porous monoliths

  4. Cholesterol-imprinted macroporous monoliths: Preparation and characterization.

    Science.gov (United States)

    Stepanova, Mariia А; Kinziabulatova, Lilia R; Nikitina, Anna A; Korzhikova-Vlakh, Evgenia G; Tennikova, Tatiana B

    2017-11-01

    The development of sorbents for selective binding of cholesterol, which is a risk factor for cardiovascular disease, has a great importance for analytical science and medicine. In this work, two series of macroporous cholesterol-imprinted monolithic sorbents differing in the composition of functional monomers (methacrylic acid, butyl methacrylate, 2-hydroxyethyl methacrylate and ethylene dimethacrylate), amount of a template (4, 6 and 8 mol%) used for molecular imprinting, as well as mean pore size were synthesized by in situ free-radical process in stainless steel housing of 50 mm × 4.6 mm i.d. All prepared materials were characterized regarding to their hydrodynamic permeability and porous properties, as well as examined by BET and SEM methods. Imprinting factors, apparent dynamic dissociation constants, the maximum binding capacity, the number of theoretical plates and the height equivalent to a theoretical palate of MIP monoliths at different mobile phase flow rates were determined. The separation of a mixture of structural analogues, namely, cholesterol and prednisolone, was demonstrated. Additionally, the possibility of using the developed monoliths for cholesterol solid-phase extraction from simulated biological solution was shown. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. A Ferrite LTCC-Based Monolithic SIW Phased Antenna Array

    KAUST Repository

    Nafe, Ahmed

    2016-11-17

    In this work, we present a novel configuration for realizing monolithic SIW-based phased antenna arrays using Ferrite LTCC technology. Unlike the current common schemes for realizing SIW phased arrays that rely on surface-mount component (p-i-n diodes, etc) for controlling the phase of the individual antenna elements, here the phase is tuned by biasing of the ferrite filling of the SIW. This approach eliminates the need for mounting of any additional RF components and enables seamless monolithic integration of phase shifters and antennas in SIW technology. As a proof of concept, a two-element slotted SIW-based phased array is designed, fabricated and measured. The prototype exhibits a gain of 4.9 dBi at 13.2 GHz and a maximum E-plane beam-scanning of 28 degrees using external windings for biasing the phase shifters. Moreover, the array can achieve a maximum beam-scanning of 19 degrees when biased with small windings that are embedded in the package. This demonstration marks the first time a fully monolithic SIW-based phased array is realized in Ferrite LTCC technology and paves the way for future larger-size implementations.

  6. A Ferrite LTCC-Based Monolithic SIW Phased Antenna Array

    KAUST Repository

    Nafe, Ahmed A.; Ghaffar, Farhan A.; Farooqui, Muhammad Fahad; Shamim, Atif

    2016-01-01

    In this work, we present a novel configuration for realizing monolithic SIW-based phased antenna arrays using Ferrite LTCC technology. Unlike the current common schemes for realizing SIW phased arrays that rely on surface-mount component (p-i-n diodes, etc) for controlling the phase of the individual antenna elements, here the phase is tuned by biasing of the ferrite filling of the SIW. This approach eliminates the need for mounting of any additional RF components and enables seamless monolithic integration of phase shifters and antennas in SIW technology. As a proof of concept, a two-element slotted SIW-based phased array is designed, fabricated and measured. The prototype exhibits a gain of 4.9 dBi at 13.2 GHz and a maximum E-plane beam-scanning of 28 degrees using external windings for biasing the phase shifters. Moreover, the array can achieve a maximum beam-scanning of 19 degrees when biased with small windings that are embedded in the package. This demonstration marks the first time a fully monolithic SIW-based phased array is realized in Ferrite LTCC technology and paves the way for future larger-size implementations.

  7. Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture

    CERN Document Server

    Giubilato, P; Snoeys, W; Bisello, D; Marchioro, A; Battaglia, M; Demaria, L; Mansuy, S C; Pantano, D; Rousset, J; Mattiazzo, S; Kloukinas, K; Potenza, A; Ikemoto, Y; Rivetti, A; Chalmet, P; Mugnier, H; Silvestrin, L

    2013-01-01

    The LePix projects aim realizing a new generation monolithic pixel detectors with improved performances at lesser cost with respect to both current state of the art monolithic and hybrid pixel sensors. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This allows charge collection by drift while maintaining the other advantages usually offered by MAPS, like having a single piece detector and using a standard CMOS production line. The collection by drift mechanism, coupled to the low capacitance design of the collecting node made possible by the monolithic approach, provides an excellent signal to noise ratio straight at the pixel cell together with a radiation tolerance far superior to conventional un-depleted MAPS. The excellent signal-to-noise performance is demonstrated by the device ability to separate the 6 keV Fe-55 double peak at room temperature. To achieve high granularity (10-20 mu m pitch pixels) over large detector areas maintaining high readout speed, a complet...

  8. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  9. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  10. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  11. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  12. Inorganic glass ceramic slip rings

    Science.gov (United States)

    Glossbrenner, E. W.; Cole, S. R.

    1972-01-01

    Prototypes of slip rings have been fabricated from ceramic glass, a material which is highly resistant to deterioration due to high temperature. Slip ring assemblies were not structurally damaged by mechanical tests and performed statisfactorily for 200 hours.

  13. Uniquely Strongly Clean Group Rings

    Institute of Scientific and Technical Information of China (English)

    WANG XIU-LAN

    2012-01-01

    A ring R is called clean if every element is the sum of an idempotent and a unit,and R is called uniquely strongly clean (USC for short) if every element is uniquely the sum of an idempotent and a unit that commute.In this article,some conditions on a ring R and a group G such that RG is clean are given.It is also shown that if G is a locally finite group,then the group ring RG is USC if and only if R is USC,and G is a 2-group.The left uniquely exchange group ring,as a middle ring of the uniquely clean ring and the USC ring,does not possess this property,and so does the uniquely exchange group ring.

  14. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  15. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  16. Development of high-throughput analysis system using highly-functional organic polymer monoliths

    International Nuclear Information System (INIS)

    Umemura, Tomonari; Kojima, Norihisa; Ueki, Yuji

    2008-01-01

    The growing demand for high-throughput analysis in the current competitive life sciences and industries has promoted the development of high-speed HPLC techniques and tools. As one of such tools, monolithic columns have attracted increasing attention and interest in the last decade due to the low flow-resistance and excellent mass transfer, allowing for rapid separations and reactions at high flow rates with minimal loss of column efficiency. Monolithic materials are classified into two main groups: silica- and organic polymer-based monoliths, each with their own advantages and disadvantages. Organic polymer monoliths have several distinct advantages in life-science research, including wide pH stability, less irreversible adsorption, facile preparation and modification. Thus, we have so far tried to develop organic polymer monoliths for various chemical operations, such as separation, extraction, preconcentration, and reaction. In the present paper, recent progress in the development of organic polymer monoliths is discussed. Especially, the procedure for the preparation of methacrylate-based monoliths with various functional groups is described, where the influence of different compositional and processing parameters on the monolithic structure is also addressed. Furthermore, the performance of the produced monoliths is demonstrated through the results for (1) rapid separations of alklybenzenes at high flow rates, (2) flow-through enzymatic digestion of cytochrome c on a trypsin-immobilized monolithic column, and (3) separation of the tryptic digest on a reversed-phase monolithic column. The flexibility and versatility of organic polymer monoliths will be beneficial for further enhancing analytical performance, and will open the way for new applications and opportunities both in scientific and industrial research. (author)

  17. Photoinitiated grafting of porous polymer monoliths and thermoplastic polymers for microfluidic devices

    Science.gov (United States)

    Frechet, Jean M. J. [Oakland, CA; Svec, Frantisek [Alameda, CA; Rohr, Thomas [Leiden, NL

    2008-10-07

    A microfluidic device preferably made of a thermoplastic polymer that includes a channel or a multiplicity of channels whose surfaces are modified by photografting. The device further includes a porous polymer monolith prepared via UV initiated polymerization within the channel, and functionalization of the pore surface of the monolith using photografting. Processes for making such surface modifications of thermoplastic polymers and porous polymer monoliths are set forth.

  18. Ring closure in actin polymers

    Energy Technology Data Exchange (ETDEWEB)

    Sinha, Supurna, E-mail: supurna@rri.res.in [Raman Research Institute, Bangalore 560080 (India); Chattopadhyay, Sebanti [Doon University, Dehradun 248001 (India)

    2017-03-18

    We present an analysis for the ring closure probability of semiflexible polymers within the pure bend Worm Like Chain (WLC) model. The ring closure probability predicted from our analysis can be tested against fluorescent actin cyclization experiments. We also discuss the effect of ring closure on bend angle fluctuations in actin polymers. - Highlights: • Ring closure of biopolymers. • Worm like chain model. • Predictions for experiments.

  19. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  20. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  1. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  2. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  3. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  4. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  5. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  6. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  7. Design of low energy ring(s)

    CERN Document Server

    Lachaize, Antoine

    During the last two years, several upgrades of the initial baseline scenario were studied with the aim of increasing the average intensity of ion beams in the accelerator chain of the Beta Beam complex. This is the reason why the Rapid Cycling Synchrotron (RCS) specifications were reconsidered many times [1], [2], [3].General considerations on the optical design were presented at the Beta Beam Task Meetings held at CERN and at Saclay in 2005 [4]. More detailed beam optics studies were performed during the next months. Lattices, RF system parameters, multi-turn injection scheme, fast extraction, closed orbit correction and chromaticity correction systems were proposed for different versions of the RCS [5], [6], [7].Finally, the RCS specifications have stabilized in November 2006 after the fourth Beta Beam Task Meeting when it was decided to fix the maximum magnetic rigidity of ion beams to 14.47 T.m (3.5 GeV equivalent proton energy) and to adopt a ring physical radius of 40 m in order to facilitate injectio...

  8. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  9. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  10. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  11. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  12. Fusion Rings for Quantum Groups

    DEFF Research Database (Denmark)

    Andersen, Henning Haahr; Stroppel, Catharina

    2012-01-01

    We study the fusion rings of tilting modules for a quantum group at a root of unity modulo the tensor ideal of negligible tilting modules. We identify them in type A with the combinatorial rings from [12] and give a similar description of the sp2n-fusion ring in terms of noncommutative symmetric...

  13. RINGED ACCRETION DISKS: EQUILIBRIUM CONFIGURATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Pugliese, D.; Stuchlík, Z., E-mail: d.pugliese.physics@gmail.com, E-mail: zdenek.stuchlik@physics.cz [Institute of Physics and Research Centre of Theoretical Physics and Astrophysics, Faculty of Philosophy and Science, Silesian University in Opava, Bezručovo náměstí 13, CZ-74601 Opava (Czech Republic)

    2015-12-15

    We investigate a model of a ringed accretion disk, made up by several rings rotating around a supermassive Kerr black hole attractor. Each toroid of the ringed disk is governed by the general relativity hydrodynamic Boyer condition of equilibrium configurations of rotating perfect fluids. Properties of the tori can then be determined by an appropriately defined effective potential reflecting the background Kerr geometry and the centrifugal effects. The ringed disks could be created in various regimes during the evolution of matter configurations around supermassive black holes. Therefore, both corotating and counterrotating rings have to be considered as being a constituent of the ringed disk. We provide constraints on the model parameters for the existence and stability of various ringed configurations and discuss occurrence of accretion onto the Kerr black hole and possible launching of jets from the ringed disk. We demonstrate that various ringed disks can be characterized by a maximum number of rings. We present also a perturbation analysis based on evolution of the oscillating components of the ringed disk. The dynamics of the unstable phases of the ringed disk evolution seems to be promising in relation to high-energy phenomena demonstrated in active galactic nuclei.

  14. Molecularly Imprinted Porous Monolithic Materials from Melamine-Formaldehyde for Selective Trapping of Phosphopeptides

    DEFF Research Database (Denmark)

    Liu, Mingquan; Tran, Tri Minh; Abbas Elhaj, Ahmed Awad

    2017-01-01

    monoliths, chosen based on the combination of meso- and macropores providing optimal percolative flow and accessible surface area, was synthesized in the presence of N-Fmoc and O-Et protected phosphoserine and phosphotyrosine to prepare molecularly imprinted monoliths with surface layers selective...... for phosphopeptides. These imprinted monoliths were characterized alongside nonimprinted monoliths by a variety of techniques and finally evaluated by liquid chromatography-mass spectrometry in the capillary format to assess their abilities to trap and release phosphorylated amino acids and peptides from partly...

  15. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure.

    Science.gov (United States)

    Sun, Xiaoxia; Uyama, Hiroshi

    2013-10-04

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields.

  16. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  17. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  18. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  19. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  20. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  1. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  2. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  3. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  4. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  5. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  6. Monolithic all-PM femtosecond Yb-fiber laser stabilized with a narrow-band fiber Bragg grating and pulse-compressed in a hollow-core photonic crystal fiber

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper

    2008-01-01

    . The laser output is compressed in a spliced-on hollow-core PM photonic crystal fiber, thus providing direct end-of-the-fiber delivery of pulses of around 370 fs duration and 4 nJ energy with high mode quality. Tuning the pump power of the end amplifier of the laser allows for the control of output pulse......We report on an environmentally stable self-starting monolithic (i.e. without any free-space coupling) all-polarization-maintaining (PM) femtosecond Yb-fiber laser, stabilized against Q-switching by a narrow-band fiber Bragg grating and modelocked using a semiconductor saturable absorber mirror...

  7. Approximate calculation of electronic energy levels of axially symmetric quantum dot and quantum ring by using energy dependent effective mass

    International Nuclear Information System (INIS)

    Yu-Min, Liu; Zhong-Yuan, Yu; Xiao-Min, Ren

    2009-01-01

    Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrödinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail. (general)

  8. Formation of ring-patterned nanoclusters by laser–plume interaction

    International Nuclear Information System (INIS)

    Sivayoganathan, Mugunthan; Tan Bo; Venkatakrishnan, Krishnan

    2013-01-01

    This article reports for the first time a unique study performed to regulate the ring diameter of nanoclusters fabricated during femtosecond laser ablation of solids and a mechanism is proposed for the formation of those ring clusters. The ring nanoclusters are made out of nanoparticles with a range of 10–30 nm. Our experimental studies showed the synthesis of ring nanoclusters with random diameter distribution on metals, nonmetals, and semiconductors, such as titanium, aluminum, glasses, ceramics, graphite, and silicon. To regulate the ring size, the effects of laser parameters, such as wavelength, pulse duration, pulse energy, and repetition rate on the ring diameter are analyzed. The influence of ablated materials and the background gas on ring size is also elaborated in this article. The motion of plume species under the influence of ponderomotive force on free electrons possibly played a key role in the formation of the ring-patterned nanoclusters. This study could help to understand the fundamentals in laser ablative nanosynthesis as well as to produce nanostructures with organized ring diameter that controls the density and porosity of those 3D nanostructures.

  9. 3D heteroepitaxy of mismatched semiconductors on silicon

    International Nuclear Information System (INIS)

    Falub, Claudiu V.; Kreiliger, Thomas; Isa, Fabio; Taboada, Alfonso G.; Meduňa, Mojmír; Pezzoli, Fabio; Bergamaschini, Roberto; Marzegalli, Anna; Müller, Elisabeth; Chrastina, Daniel; Isella, Giovanni; Neels, Antonia; Niedermann, Philippe; Dommann, Alex; Miglio, Leo; Känel, Hans von

    2014-01-01

    We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals. The crystals are formed by a combination of deep-patterning of the Si substrates and self-limited lateral expansion during the epitaxial growth. Consequently, the longstanding issues of crack formation and wafer bowing can be avoided. Moreover, threading dislocations can be eliminated by appropriately choosing pattern sizes, layer thicknesses and surface morphology, the latter being dependent on the growth temperature. We show this approach to be valid for various material combinations, pattern geometries and substrate orientations. We demonstrate that Ge crystals evolve into perfect structures away from the heavily dislocated interface with Si, by using a synchrotron X-ray beam focused to a spot a few hundred nanometers in size and by recording 3D reciprocal space maps along their height. Room temperature photoluminescence (PL) experiments reveal that the interband integrated PL intensity of the Ge crystals is enhanced by almost three orders of magnitude with respect to that of Ge epilayers directly grown on flat Si substrates. Electrical measurements performed on single heterojunction diodes formed between 3D Ge crystals and the Si substrate exhibit rectifying behavior with dark currents of the order of 1 mA/cm 2 . For GaAs the thermal strain relaxation as a function of pattern size is similar to that found for group IV materials. Significant differences exist, however, in the evolution of crystal morphology with pattern size, which more and more tends to a pyramidal shape defined by stable {111} facets with decreasing width of the Si pillars. - Highlights: • Νew method for integrating mismatched semiconductors • Arrays of three-dimensional epitaxial Ge and GaAs crystals on Si

  10. Ring Confidential Transactions

    Directory of Open Access Journals (Sweden)

    Shen Noether

    2016-12-01

    Full Text Available This article introduces a method of hiding transaction amounts in the strongly decentralized anonymous cryptocurrency Monero. Similar to Bitcoin, Monero is a cryptocurrency which is distributed through a proof-of-work “mining” process having no central party or trusted setup. The original Monero protocol was based on CryptoNote, which uses ring signatures and one-time keys to hide the destination and origin of transactions. Recently the technique of using a commitment scheme to hide the amount of a transaction has been discussed and implemented by Bitcoin Core developer Gregory Maxwell. In this article, a new type of ring signature, A Multilayered Linkable Spontaneous Anonymous Group signature is described which allows one to include a Pedersen Commitment in a ring signature. This construction results in a digital currency with hidden amounts, origins and destinations of transactions with reasonable efficiency and verifiable, trustless coin generation. The author would like to note that early drafts of this were publicized in the Monero Community and on the #bitcoin-wizards IRC channel. Blockchain hashed drafts are available showing that this work was started in Summer 2015, and completed in early October 2015. An eprint is also available at http://eprint.iacr.org/2015/1098.

  11. Fusion Rings for Quantum Groups

    DEFF Research Database (Denmark)

    Andersen, Henning Haahr; Stroppel, Catharina

    2014-01-01

    We study the fusion rings of tilting modules for a quantum group at a root of unity modulo the tensor ideal of negligible tilting modules. We identify them in type A with the combinatorial rings from Korff, C., Stroppel, C.: The sl(ˆn)k-WZNW fusion ring: a combinato-rial construction...... and a realisation as quotient of quantum cohomology. Adv. Math. 225(1), 200–268, (2010) and give a similar description of the sp2n-fusion ring in terms of non-commutative symmetric functions. Moreover we give a presentation of all fusion rings in classical types as quotients of polynomial rings. Finally we also...... compute the fusion rings for type G2....

  12. Data quality objectives summary report for the 105-N monolith off-gas issue

    International Nuclear Information System (INIS)

    Pisarcik, D.J.

    1997-01-01

    The 105-N Basin hardware waste with radiation exposure rates high enough to make above-water handling and packaging impractical has been designated high exposure rate hardware (HERH) waste. This material, consisting primarily of irradiated reactor components, is packaged underwater for subsequent disposal as a grout-encapsulated solid monolith. The third HERH waste package that was created (Monolith No. 3) was not immediately removed from the basin because of administrative delays. During a routine facility walkdown, Monolith No. 3 was observed to be emitting bubbles. Mass spectroscopic analysis of a gas sample from Monolith No. 3 indicated that the gas was 85.2% hydrogen along with a trace of fission gases (stable isotopes of xenon). Gamma energy analysis of a gas sample from Monolith No. 3 also identified trace quantities of 85 Kr. The monolith off-gas Data Quality Objective (DQO) process concluded the following: Monolith No. 3 and similar monoliths can be safely transported following installation of spacers between the lids of the L3-181 transport cask to vent the hydrogen gas; The 85 Kr does not challenge personnel or environmental safety; Fumaroles in the surface of gassing monoliths renders them incompatible with Hanford Site Solid Waste Acceptance Criteria requirements unless placed in a qualified high integrity container overpack; and Gassing monoliths do meet Environmental Restoration Disposal Facility Waste Acceptance Criteria requirements. This DQO Summary Report is both an account of the Monolith Off-Gas DQO Process and a means of documenting the concurrence of each of the stakeholder organizations

  13. Preparation of organic monolithic columns in polytetrafluoroethylene tubes for reversed-phase liquid chromatography

    International Nuclear Information System (INIS)

    Catalá-Icardo, M.; Torres-Cartas, S.; Meseguer-Lloret, S.; Gómez-Benito, C.; Carrasco-Correa, E.; Simó-Alfonso, E.F.; Ramis-Ramos, G.; Herrero-Martínez, J.M.

    2017-01-01

    In this work, a method for the preparation and anchoring of polymeric monoliths in a polytetrafluoroethylene (PTFE) tubing as a column housing for microbore HPLC is described. In order to assure a covalent attachment of the monolith to the inner wall of the PTFE tube, a two-step procedure was developed. Two surface etching reagents, a commercial sodium naphthalene solution (Fluoroetch"®), or mixtures of H_2O_2 and H_2SO_4, were tried and compared. Then, the obtained hydroxyl groups on the PTFE surface were modified by methacryloylation. Attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy and scanning electron microscopy (SEM) confirmed the successful modification of the tubing wall and the stable anchorage of monolith to the wall, respectively. Special emphasis was also put on the reduction of the unwanted effects of shrinking of monolith during polymerization, by using an external proper mold and by selecting the adequate monomers in order to increase the flexibility of the polymer. Poly(glycidyl methacrylate-co-divinylbenzene) monoliths were in situ synthesized by thermal polymerization within the confines of surface-vinylized PTFE tubes. The modified PTFE tubing tightly held the monolith, and the monolithic column exhibited good pressure resistance up to 20 MPa. The column performance was also evaluated via the isocratic separation of a series of alkylbenzenes in the reversed-phase mode. The optimized monolithic columns gave plate heights ranged between 70 and 80 μm. The resulting monoliths were also satisfactorily applied to the separation of proteins. - Highlights: • Successful surface etching of PTFE inner wall tubing was done. • The modified PTFE support was next methacryloylated with GMA. • Organic polymeric monolith was in situ prepared in the functionalized PTFE tube. • The monolithic columns gave suitable pressure resistance and separation of proteins.

  14. Preparation of organic monolithic columns in polytetrafluoroethylene tubes for reversed-phase liquid chromatography

    Energy Technology Data Exchange (ETDEWEB)

    Catalá-Icardo, M., E-mail: mocaic@qim.upv.es [Research Institute for Integrated Management of Coastal Areas, Universitat Politècnica de València, Paranimf 1, 46730, Grao de Gandía, Valencia (Spain); Torres-Cartas, S.; Meseguer-Lloret, S.; Gómez-Benito, C. [Research Institute for Integrated Management of Coastal Areas, Universitat Politècnica de València, Paranimf 1, 46730, Grao de Gandía, Valencia (Spain); Carrasco-Correa, E.; Simó-Alfonso, E.F.; Ramis-Ramos, G. [Department of Analytical Chemistry, Universitat de València, Dr. Moliner 50, 46100, Burjassot, Valencia (Spain); Herrero-Martínez, J.M., E-mail: jmherrer@uv.es [Department of Analytical Chemistry, Universitat de València, Dr. Moliner 50, 46100, Burjassot, Valencia (Spain)

    2017-04-01

    In this work, a method for the preparation and anchoring of polymeric monoliths in a polytetrafluoroethylene (PTFE) tubing as a column housing for microbore HPLC is described. In order to assure a covalent attachment of the monolith to the inner wall of the PTFE tube, a two-step procedure was developed. Two surface etching reagents, a commercial sodium naphthalene solution (Fluoroetch{sup ®}), or mixtures of H{sub 2}O{sub 2} and H{sub 2}SO{sub 4}, were tried and compared. Then, the obtained hydroxyl groups on the PTFE surface were modified by methacryloylation. Attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy and scanning electron microscopy (SEM) confirmed the successful modification of the tubing wall and the stable anchorage of monolith to the wall, respectively. Special emphasis was also put on the reduction of the unwanted effects of shrinking of monolith during polymerization, by using an external proper mold and by selecting the adequate monomers in order to increase the flexibility of the polymer. Poly(glycidyl methacrylate-co-divinylbenzene) monoliths were in situ synthesized by thermal polymerization within the confines of surface-vinylized PTFE tubes. The modified PTFE tubing tightly held the monolith, and the monolithic column exhibited good pressure resistance up to 20 MPa. The column performance was also evaluated via the isocratic separation of a series of alkylbenzenes in the reversed-phase mode. The optimized monolithic columns gave plate heights ranged between 70 and 80 μm. The resulting monoliths were also satisfactorily applied to the separation of proteins. - Highlights: • Successful surface etching of PTFE inner wall tubing was done. • The modified PTFE support was next methacryloylated with GMA. • Organic polymeric monolith was in situ prepared in the functionalized PTFE tube. • The monolithic columns gave suitable pressure resistance and separation of proteins.

  15. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  16. Tree Rings: Timekeepers of the Past.

    Science.gov (United States)

    Phipps, R. L.; McGowan, J.

    One of a series of general interest publications on science issues, this booklet describes the uses of tree rings in historical and biological recordkeeping. Separate sections cover the following topics: dating of tree rings, dating with tree rings, tree ring formation, tree ring identification, sample collections, tree ring cross dating, tree…

  17. 10Gbps monolithic silicon FTTH transceiver for PON

    Science.gov (United States)

    Zhang, J.; Liow, T. Y.; Lo, G. Q.; Kwong, D. L.

    2010-05-01

    We propose a new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU), eliminating the need for an internal laser source in ONU. We adopt dual fiber network configuration. The internal light source in each of the ONUs is eliminated. Instead, an extra seed laser source in the optical line termination (OLT) operates in continuous wave mode to serve the ONUs in the PON as a shared and centralized laser source. λ1 from OLT Tx and λ2 from the seed laser are combined by using a WDM combiner and connected to serve the multiple ONUs through the downstream fibers. The ONUs receive the data in λ1. Meanwhile, the ONUs encode and transmit data in λ2, which are sent back to OLT. The monolithic ONU transceiver contains a wavelength-division-multiplexing (WDM) filter component, a silicon modulator and a Ge photo-detector. The WDM in ONU selectively guides λ1 to the Ge-PD where the data in λ1 are detected and converted to electrical signals, and λ2 to the transmitter where the light is modulated by upstream data. The modulated optical signals in λ2 from ONUs are connected back to OLT through upstream fibers. The monolithic ONU transceiver chip size is only 2mm by 4mm. The crosstalk between the Tx and Rx is measured to be less than -20dB. The transceiver chip is integrated on a SFP+ transceiver board. Both Tx and Rx demonstrated data rate capabilities of up to 10Gbps. By implementing this scheme, the ONU transceiver size can be significantly reduced and the assembly processes will be greatly simplified. The results demonstrate the feasibility of mass manufacturing monolithic silicon ONU transceivers via low cost

  18. Fiber-based monolithic columns for liquid chromatography.

    Science.gov (United States)

    Ladisch, Michael; Zhang, Leyu

    2016-10-01

    Fiber-based monoliths for use in liquid chromatographic separations are defined by columns packed with aligned fibers, woven matrices, or contiguous fiber structures capable of achieving rapid separations of proteins, macromolecules, and low molecular weight components. A common denominator and motivating driver for this approach, first initiated 25 years ago, was reducing the cost of bioseparations in a manner that also reduced residence time of retained components while achieving a high ratio of mass to momentum transfer. This type of medium, when packed into a liquid chromatography column, minimized the fraction of stagnant liquid and resulted in a constant plate height for non-adsorbing species. The uncoupling of dispersion from eluent flow rate enabled the surface chemistry of the stationary phase to be considered separately from fluid transport phenomena and pointed to new ways to apply chemistry for the engineering of rapid bioseparations. This paper addresses developments and current research on fiber-based monoliths and explains how the various forms of this type of chromatographic stationary phase have potential to provide new tools for analytical and preparative scale separations. The different stationary phases are discussed, and a model that captures the observed constant plate height as a function of mobile phase velocity is reviewed. Methods that enable hydrodynamically stable fiber columns to be packed and operated over a range of mobile phase flow rates, together with the development of new fiber chemistries, are shown to provide columns that extend the versatility of liquid chromatography using monoliths, particularly at the preparative scale. Graphical Abstract Schematic representation of a sample mixture being separated by a rolled-stationary phase column, resulting separated peaks shown in the chromatogram.

  19. Flexible, Photopatterned, Colloidal CdSe Semiconductor Nanocrystal Integrated Circuits

    Science.gov (United States)

    Stinner, F. Scott

    As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists to create transistors which are not nearly as small. These transistors are not intended to match the performance of traditional crystalline semiconductors; they are designed to be significantly lower in cost and manufactured using methods that can make them physically flexible for applications where form is more important than speed. One of the developing technologies for this application is semiconductor nanocrystals. We first explore methods to develop CdSe nanocrystal semiconducting "inks" into large-scale, high-speed integrated circuits. We demonstrate photopatterned transistors with mobilities of 10 cm2/Vs on Kapton substrates. We develop new methods for vertical interconnect access holes to demonstrate multi-device integrated circuits including inverting amplifiers with 7 kHz bandwidths, ring oscillators with NFC) link. The device draws its power from the NFC transmitter common on smartphones and eliminates the need for a fixed battery. This allows for the mass deployment of flexible, interactive displays on product packaging.

  20. SOR-ring failure

    International Nuclear Information System (INIS)

    Kitamura, Hideo

    1981-01-01

    It was in the autumn of 1976 that the SOR-ring (synchrotron radiation storage ring) has commenced the regular operation. Since then, the period when the operation was interrupted due to the failures of SOR-ring itself is in total about 8 weeks. Failures and accidents have occurred most in the vacuum system. Those failure experiences are described on the vacuum, electromagnet, radio-frequency acceleration and beam transport systems with their interrupted periods. The eleven failures in the vacuum system have been reported, such as bellows breakage in a heating-evacuating period, leakage from the bellows of straight-through valves (made in U.S.A. and Japan), and leakage from the joint flange of the vacuum system. The longest interruption was 5 weeks due to the failure of a domestically manufactured straight-through valve. The failures of the electromagnet system involve the breakage in a cooling water system, short circuit of a winding in the Q magnet power transformer, blow of a fuse protecting the deflection magnet power source by the current less than the rating, and others. The failures of the RF acceleration system include the breakage of an output electronic tube the breakage of a cavity ceramic, RF voltage fluctuation due to the contact deterioration at a cavity electrode, and the failure of grid bias power source. It is necessary to select the highly reliable components for the vacuum system because the vacuum system failures require longer time for recovery, and very likely to induce secondary and tertiary failures. (Wakatsuki, Y.)

  1. Transverse mode selection in a monolithic microchip laser

    CSIR Research Space (South Africa)

    Naidoo, Darryl

    2011-11-01

    Full Text Available selection in a monolithic microchip laser Darryl Naidooa,b, Thomas Godinc, Michael Fromagerc, Emmanuel Cagniotc, Nicolas Passillyd, Andrew Forbesa,b and Kamel A?t-Ameurc1 a:CSIR National Laser Centre, P. O. Box 395, Pretoria 0001, South Africa b.... Lett. 77 (2000) 34-36. [14] W. Zhao, J. Tan and L. Qui, ?Improvement of confocal microscope performance by shaped annular beam and heterodyne confocal techniques,? Optik 116 (2005) 111-117. [15] T. Shiina, K. Yoshida, M. Ito and Y. Okamura, ?Long...

  2. A hybrid FIA/HPLC system incorporating monolithic column chromatography

    International Nuclear Information System (INIS)

    Adcock, Jacqui L.; Francis, Paul S.; Agg, Kent M.; Marshall, Graham D.; Barnett, Neil W.

    2007-01-01

    We have combined the generation of solvent gradients using milliGAT pumps, chromatographic separations with monolithic columns and chemiluminescence detection in an instrument manifold that approaches the automation and separation efficiency of HPLC, whilst maintaining the positive attributes of flow injection analysis (FIA), such as manifold versatility, speed of analysis and portability. As preliminary demonstrations of this hybrid FIA/HPLC system, we have determined six opiate alkaloids (morphine, pseudomorphine, codeine, oripavine, ethylmorphine and thebaine) and four biogenic amines (vanilmandelic acid, serotonin, 5-hydroxyindole-3-acetic acid and homovanillic acid) in human urine, using tris(2,2'-bipyridyl)ruthenium(III) and acidic potassium permanganate chemiluminescence detection

  3. On drift fields in CMOS monolithic active pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Deveaux, Michael [Goethe-Universitaet, Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2016-07-01

    CMOS Monolithic Active Pixel Sensors (MAPS) combine an excellent spatial resolution of few μm with a very low material budget of 0.05% X{sub 0}. To extend their radiation tolerance to the level needed for future experiments like e.g. CBM, it is regularly considered to deplete their active volume. We discuss the limits of this strategy accounting for the specific features of the sensing elements of MAPS. Moreover, we introduce an alternative approach to generate the drift fields needed to provoke a faster charge collection by means of doping gradients.

  4. Development of the multiwavelength monolithic integrated fiber optics terminal

    Science.gov (United States)

    Chubb, C. R.; Bryan, D. A.; Powers, J. K.; Rice, R. R.; Nettle, V. H.; Dalke, E. A.; Reed, W. R.

    1982-01-01

    This paper describes the development of the Multiwavelength Monolithic Integrated Fiber Optic Terminal (MMIFOT) for the NASA Johnson Space Center. The program objective is to utilize guided wave optical technology to develop wavelength-multiplexing and -demultiplexing units, using a single mode optical fiber for transmission between terminals. Intensity modulated injection laser diodes, chirped diffraction gratings and thin film lenses are used to achieve the wavelength-multiplexing and -demultiplexing. The video and audio data transmission test of an integrated optical unit with a Luneburg collimation lens, waveguide diffraction grating and step index condensing lens is described.

  5. Proton storage rings

    International Nuclear Information System (INIS)

    Rau, R.R.

    1978-04-01

    A discussion is given of proton storage ring beam dynamic characteristics. Topics considered include: (1) beam energy; (2) beam luminosity; (3) limits on beam current; (4) beam site; (5) crossing angle; (6) beam--beam interaction; (7) longitudinal instability; (8) effects of scattering processes; (9) beam production; and (10) high magnetic fields. Much of the discussion is related to the design parameters of ISABELLE, a 400 x 400 GeV proton---proton intersecting storage accelerator to be built at Brookhaven National Laboratory

  6. Ring-constrained Join

    DEFF Research Database (Denmark)

    Yiu, Man Lung; Karras, Panagiotis; Mamoulis, Nikos

    2008-01-01

    . This new operation has important applications in decision support, e.g., placing recycling stations at fair locations between restaurants and residential complexes. Clearly, RCJ is defined based on a geometric constraint but not on distances between points. Thus, our operation is fundamentally different......We introduce a novel spatial join operator, the ring-constrained join (RCJ). Given two sets P and Q of spatial points, the result of RCJ consists of pairs (p, q) (where p ε P, q ε Q) satisfying an intuitive geometric constraint: the smallest circle enclosing p and q contains no other points in P, Q...

  7. Femtoslicing in Storage Rings

    CERN Document Server

    Khan, Shaukat

    2005-01-01

    The generation of ultrashort synchrotron radiation pulses by laser-induced energy modulation of electrons and their subsequent transverse displacement, now dubbed "femtoslicing," was demonstrated at the Advanced Light Source in Berkeley. More recently, a femtoslicing user facility was commissioned at the BESSY storage ring in Berlin, and another project is in progress at the Swiss Light Source. The paper reviews the principle of femtoslicing, its merits and shortcomings, as well as the variations of its technical implementation. Various diagnostics techniques to detect successful laser-electron interaction are discussed and experimental results are presented.

  8. Viscosity of ring polymer melts

    KAUST Repository

    Pasquino, Rossana

    2013-10-15

    We have measured the linear rheology of critically purified ring polyisoprenes, polystyrenes, and polyethyleneoxides of different molar masses. The ratio of the zero-shear viscosities of linear polymer melts η0,linear to their ring counterparts η0,ring at isofrictional conditions is discussed as a function of the number of entanglements Z. In the unentangled regime η0,linear/η 0,ring is virtually constant, consistent with the earlier data, atomistic simulations, and the theoretical expectation η0,linear/ η0,ring = 2. In the entanglement regime, the Z-dependence of ring viscosity is much weaker than that of linear polymers, in qualitative agreement with predictions from scaling theory and simulations. The power-law extracted from the available experimental data in the rather limited range 1 < Z < 20, η0,linear/η0,ring ∼ Z 1.2±0.3, is weaker than the scaling prediction (η0,linear/η0,ring ∼ Z 1.6±0.3) and the simulations (η0,linear/ η0,ring ∼ Z2.0±0.3). Nevertheless, the present collection of state-of-the-art experimental data unambiguously demonstrates that rings exhibit a universal trend clearly departing from that of their linear counterparts, and hence it represents a major step toward resolving a 30-year-old problem. © 2013 American Chemical Society.

  9. Viscosity of ring polymer melts

    KAUST Repository

    Pasquino, Rossana; Vasilakopoulos, Thodoris C.; Jeong, Youncheol; Lee, Hyojoon; Rogers, Simon A.; Sakellariou, Georgios; Allgaier, Jü rgen B.; Takano, Atsushi; Brá s, Ana Rita E; Chang, Taihyun; Gooß en, Sebastian; Pyckhout-Hintzen, Wim; Wischnewski, Andreas; Hadjichristidis, Nikolaos; Richter, Dieter R.; Rubinstein, Michael H.; Vlassopoulos, Dimitris

    2013-01-01

    We have measured the linear rheology of critically purified ring polyisoprenes, polystyrenes, and polyethyleneoxides of different molar masses. The ratio of the zero-shear viscosities of linear polymer melts η0,linear to their ring counterparts η0,ring at isofrictional conditions is discussed as a function of the number of entanglements Z. In the unentangled regime η0,linear/η 0,ring is virtually constant, consistent with the earlier data, atomistic simulations, and the theoretical expectation η0,linear/ η0,ring = 2. In the entanglement regime, the Z-dependence of ring viscosity is much weaker than that of linear polymers, in qualitative agreement with predictions from scaling theory and simulations. The power-law extracted from the available experimental data in the rather limited range 1 < Z < 20, η0,linear/η0,ring ∼ Z 1.2±0.3, is weaker than the scaling prediction (η0,linear/η0,ring ∼ Z 1.6±0.3) and the simulations (η0,linear/ η0,ring ∼ Z2.0±0.3). Nevertheless, the present collection of state-of-the-art experimental data unambiguously demonstrates that rings exhibit a universal trend clearly departing from that of their linear counterparts, and hence it represents a major step toward resolving a 30-year-old problem. © 2013 American Chemical Society.

  10. Alpha - Skew Pi - Armendariz Rings

    Directory of Open Access Journals (Sweden)

    Areej M Abduldaim

    2018-03-01

    Full Text Available In this article we introduce a new concept called Alpha-skew Pi-Armendariz rings (Alpha - S Pi - ARas a generalization of the notion of Alpha-skew Armendariz rings.Another important goal behind studying this class of rings is to employ it in order to design a modern algorithm of an identification scheme according to the evolution of using modern algebra in the applications of the field of cryptography.We investigate general properties of this concept and give examples for illustration. Furthermore, this paperstudy the relationship between this concept and some previous notions related to Alpha-skew Armendariz rings. It clearly presents that every weak Alpha-skew Armendariz ring is Alpha-skew Pi-Armendariz (Alpha-S Pi-AR. Also, thisarticle showsthat the concepts of Alpha-skew Armendariz rings and Alpha-skew Pi- Armendariz rings are equivalent in case R is 2-primal and semiprime ring.Moreover, this paper proves for a semicommutative Alpha-compatible ringR that if R[x;Alpha] is nil-Armendariz, thenR is an Alpha-S Pi-AR. In addition, if R is an Alpha - S Pi -AR, 2-primal and semiprime ring, then N(R[x;Alpha]=N(R[x;Alpha]. Finally, we look forwardthat Alpha-skew Pi-Armendariz rings (Alpha-S Pi-ARbe more effect (due to their properties in the field of cryptography than Pi-Armendariz rings, weak Armendariz rings and others.For these properties and characterizations of the introduced concept Alpha-S Pi-AR, we aspire to design a novel algorithm of an identification scheme.

  11. Preparation of a zeolite-modified polymer monolith for identification of synthetic colorants in lipsticks

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Huiqi; Li, Zheng [College of Chemistry, Jilin University, Changchun 130012 (China); Niu, Qian [Jilin Entry-Exit Inspection and Quarantine Bureau, Changchun 130062 (China); Ma, Jiutong [College of Chemistry, Jilin University, Changchun 130012 (China); Jia, Qiong, E-mail: jiaqiong@jlu.edu.cn [College of Chemistry, Jilin University, Changchun 130012 (China)

    2015-10-30

    Graphical abstract: Poly(methacrylic acid-ethylene dimethacrylate) monolithic column embedded with zeolites was prepared and employed for the polymer monolith microextraction of colorants combined with HPLC. - Highlights: • Zeolite, as a kind of mesoporous material, was firstly combined with PMME. • Zeolite@poly(MAA-EDMA) monolith columns were prepared for the enrichment of colorants. • Zeolite@poly(MAA-EDMA) monolith columns demonstrated relatively high extraction capacity. - Abstract: A novel zeolite-modified poly(methacrylic acid-ethylenedimethacrylate) (zeolite@poly(MAA-EDMA)) monolithic column was prepared with the in situ polymerization method and employed in polymer monolith microextraction for the separation and preconcentration of synthetic colorants combined with high performance liquid chromatography. The polymer was characterized by scanning electronmicroscopy, Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, and thermo-gravimetric analysis. Various parameters affecting the extraction efficiency were investigated and optimized. Under the optimum experimental conditions, we obtained acceptable linearities, low limits of detection, and good intra-day/inter-day relative standard deviations. The method was applied to the determination of synthetic colorants in lipsticks with recoveries ranged from 70.7% to 109.7%. Compared with conventional methacrylic acid-based monoliths, the developed monolith exhibited high enrichment capacity because of the introduction of zeolites into the preparation process. The extraction efficiency followed the order: zeolite@poly(MAA-EDMA) > poly(MAA-EDMA) > direct HPLC analysis.

  12. Development of double chain phosphatidylcholine functionalized polymeric monoliths for immobilized artificial membrane chromatography.

    Science.gov (United States)

    Wang, Qiqin; Peng, Kun; Chen, Weijia; Cao, Zhen; Zhu, Peijie; Zhao, Yumei; Wang, Yuqiang; Zhou, Haibo; Jiang, Zhengjin

    2017-01-06

    This study described a simple synthetic methodology for preparing biomembrane mimicking monolithic column. The suggested approach not only simplifies the preparation procedure but also improves the stability of double chain phosphatidylcholine (PC) functionalized monolithic column. The physicochemical properties of the optimized monolithic column were characterized by scanning electron microscopy, energy-dispersive X-ray spectrometry, and nano-LC. Satisfactory column permeability, efficiency, stability and reproducibility were obtained on this double chain PC functionalized monolithic column. It is worth noting that the resulting polymeric monolith exhibits great potential as a useful alternative of commercial immobilized artificial membrane (IAM) columns for in vitro predication of drug-membrane interactions. Furthermore, the comparative study of both double chain and single chain PC functionalized monoliths indicates that the presence or absence of glycerol backbone and the number of acyl chains are not decisive for the predictive ability of IAM monoliths on drug-membrane interactions. This novel PC functionalized monolithic column also exhibited good selectivity for a protein mixture and a set of pharmaceutical compounds. Copyright © 2016 Elsevier B.V. All rights reserved.

  13. Recent advances in the preparation and application of monolithic capillary columns in separation science

    International Nuclear Information System (INIS)

    Hong, Tingting; Yang, Xi; Xu, Yujing; Ji, Yibing

    2016-01-01

    Novel column technologies involving various materials and efficient reactions have been investigated for the fabrication of monolithic capillary columns in the field of analytical chemistry. In addition to the development of these miniaturized systems, a variety of microscale separation applications have achieved noteworthy results, providing a stepping stone for new types of chromatographic columns with improved efficiency and selectivity. Three novel strategies for the preparation of capillary monoliths, including ionic liquid-based approaches, nanoparticle-based approaches and “click chemistry”, are highlighted in this review. Furthermore, we present the employment of state-of-the-art capillary monolithic stationary phases for enantioseparation, solid-phase microextraction, mixed-mode separation and immobilized enzyme reactors. The review concludes with recommendations for future studies and improvements in this field of research. - Highlights: • Preparation of novel monolithic capillary columns have shown powerful potential in analytical chemistry field. • Various materials including ionic liquids and nanoparticles involved into capillary monolithic micro-devices are concluded. • Click chemistry strategy applied for preparing monolithic capillary columns is reviewed. • Recent strategies utilized in constructing different capillary monoliths for enantiomeric separation are summarized. • Advancement of capillary monoliths for complex samples analysis is comprehensively described.

  14. Recent advances in the preparation and application of monolithic capillary columns in separation science

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Tingting; Yang, Xi; Xu, Yujing [Department of Analytical Chemistry, China Pharmaceutical University, Nanjing, 210009 (China); Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing, 210009 (China); Ji, Yibing, E-mail: jiyibing@msn.com [Department of Analytical Chemistry, China Pharmaceutical University, Nanjing, 210009 (China); Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing, 210009 (China)

    2016-08-10

    Novel column technologies involving various materials and efficient reactions have been investigated for the fabrication of monolithic capillary columns in the field of analytical chemistry. In addition to the development of these miniaturized systems, a variety of microscale separation applications have achieved noteworthy results, providing a stepping stone for new types of chromatographic columns with improved efficiency and selectivity. Three novel strategies for the preparation of capillary monoliths, including ionic liquid-based approaches, nanoparticle-based approaches and “click chemistry”, are highlighted in this review. Furthermore, we present the employment of state-of-the-art capillary monolithic stationary phases for enantioseparation, solid-phase microextraction, mixed-mode separation and immobilized enzyme reactors. The review concludes with recommendations for future studies and improvements in this field of research. - Highlights: • Preparation of novel monolithic capillary columns have shown powerful potential in analytical chemistry field. • Various materials including ionic liquids and nanoparticles involved into capillary monolithic micro-devices are concluded. • Click chemistry strategy applied for preparing monolithic capillary columns is reviewed. • Recent strategies utilized in constructing different capillary monoliths for enantiomeric separation are summarized. • Advancement of capillary monoliths for complex samples analysis is comprehensively described.

  15. Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

    International Nuclear Information System (INIS)

    Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

    1991-11-01

    The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

  16. Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

    Science.gov (United States)

    Martín-Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, Julian; Rastelli, Armando

    2018-01-01

    The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials’ emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

  17. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  18. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  19. Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO{sub 2} gas sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Hoa, Nguyen Duc, E-mail: ndhoa@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam); Duy, Nguyen Van [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam); Hieu, Nguyen Van, E-mail: hieu@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam)

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Mesoporous WO{sub 3} nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO{sub 3} sensor exhibited a high performance to NO{sub 2} gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxide (NO{sub 2}) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO{sub 2}. In addition, the developed sensor exhibited selective detection of low NO{sub 2} concentration in ammonia and ethanol at a low temperature of approximately 150 °C.

  20. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

    Science.gov (United States)

    Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

    2018-02-19

    We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

  1. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  2. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  3. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  4. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  5. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  6. NRL ion ring program

    International Nuclear Information System (INIS)

    Kapetanakos, C.A.; Golden, J.; Drobot, A.; Mahaffey, R.A.; Marsh, S.J.; Pasour, J.A.

    1977-01-01

    An experiment is under way to form a storng proton ring using the 200 ka, 1.2 MeV, 50 nsec hollow proton beam recently generated at NRL. The 5 m long magnetic field configuration consists of a magnetic cusp, a compressing magnetic field, a gate field and a magnetic mirror. The midplane value of the magnetic mirror is such that the major radius of the ring will be about 10 cm. The degree of field reversal that will be achieved with 5 x 10 16 protons per pulse from the existing beam depends upon the field reversal is possible with the 600 kA proton beam that would be generated from the low inductance coaxial triode coupled to the upgraded Gamble II generator. The propagation and trapping of an intense proton beam in the experimental magnetic field configuration is investigated numerically. The results show that the self magnetic has a very pronounced effect on the dynamics of the gyrating protons

  7. Flexible ring seal

    International Nuclear Information System (INIS)

    Abbes, Claude; Gournier, Andre; Rouaud, Christian; Villepoix, Raymond de.

    1976-01-01

    The invention concerns a flexible metal ring seal, able to ensure a perfect seal between two bearings due to the crushing and elastic deformation properties akin to similar properties in elastomers. Various designs of seal of this kind are already known, particularly a seal made of a core formed by a helical wire spring with close-wound turns and with high axial compression ratio, closed on itself and having the shape of an annulus. This wire ring is surrounded by at least one envelope having at rest the shape of a toroidal surface of which the generating circle does not close on itself. In a particular design mode, the seal in question can include, around the internal spring, two envelopes of which one in contact with the spring is composed of a low ductility elastic metal, such as mild steel or stainless steel and the other is, on the contrary, made of a malleable metal, such as copper or nickel. The first envelope evenly distributes the partial crushing of the spring, when the seal is tightened, on the second envelope which closely fits the two surfaces between which the seal operates. The stress-crushing curve characteristic of the seal comprises two separate parts, the first with a relatively sharp slope corresponds to the start of the seal compression phase, enabling at least some of these curves to reach the requisite seal threshold very quickly, then, beyond this, a second part, practically flat, where the stress is appreciably constant for a wide operating bracket [fr

  8. Magnetization of two coupled rings

    International Nuclear Information System (INIS)

    Avishai, Y; Luck, J M

    2009-01-01

    We investigate the persistent currents and magnetization of a mesoscopic system consisting of two clean metallic rings sharing a single contact point in a magnetic field. Many novel features with respect to the single-ring geometry are underlined, including the explicit dependence of wavefunctions on the Aharonov-Bohm fluxes, the complex pattern of two-fold and three-fold degeneracies, the key role of length and flux commensurability, and in the case of commensurate ring lengths the occurrence of idle levels which do not carry any current. Spin-orbit interactions, induced by the electric fields of charged wires threading the rings, give rise to a peculiar version of the Aharonov-Casher effect where, unlike for a single ring, spin is not conserved. Remarkably enough, this can only be realized when the Aharonov-Bohm fluxes in both rings are neither integer nor half-integer multiples of the flux quantum

  9. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  10. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

  11. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  12. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  13. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  14. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  15. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  16. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  17. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  18. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  19. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  20. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider