WorldWideScience

Sample records for monolithic laser diode

  1. Monolithic resonant optical reflector laser diodes

    Science.gov (United States)

    Hirata, T.; Suehiro, M.; Maeda, M.; Hihara, M.; Hosomatsu, H.

    1991-10-01

    The first monolithic resonant optical reflector laser diode that has a waveguide directional coupler and two DBR reflectors integrated by compositional disordering of quantum-well heterostructures is described. A linewidth of 440 kHz was obtained, and this value is expected to be greatly decreased by reducing the propagation loss in the integrated waveguide.

  2. Monolithically Peltier-cooled laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hava, S.; Hunsperger, R.G.; Sequeira, H.B.

    1984-04-01

    A new method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and heat spreading device to the laser, is presented. This cooling both reduces and stabilizes the laser junction temperature to minimize such deleterious effects as wavelength drift due to heating. A unified description of the electrical and thermal properties of a monolithic semiconductor mesa structure is given. Here it is shown that an improvement in thermal characteristics is obtained by depositing a relatively thick metallic layer, and by using this layer as a part of an active Peltier structure. Experimental results reveal a 14-percent increase in emitted power (external quantum efficiency) due to passive heat spreading and a further 8-percent if its Peltier cooler is operated. Fabrication techniques used to obtain devices exhibiting the above performance characteristics are given. 21 references.

  3. Laser-diode-pumped 1319-nm monolithic non-planar ring single-frequency laser

    Institute of Scientific and Technical Information of China (English)

    Qing Wang(王青); Chunqing Gao(高春清); Yan Zhao(赵严); Suhui Yang(杨苏辉); Guanghui Wei(魏光辉); Dongmei Hong(洪冬梅)

    2003-01-01

    Single-frequency 1319-nm laser was obtained by using a laser-diode-pumped monolithic Nd:YAG crystalwith a non-planar ring oscillator (NPRO). When the NPRO laser was pumped by an 800-μm fiber coupledlaser diode, the output power of the single-frequency 1319-nm laser was 220 mW, and the slope efficiencywas 16%. With a 100-μm fiber coupled diode laser pumped, 99-mW single-frequency 1319-nm laser wasobtained with a slope efficiency of 29%.

  4. Transverse modes of a diode-laser pumped monolithic unidirectional non-planar ring laser

    Institute of Scientific and Technical Information of China (English)

    Keying Wu(吴克瑛); Suhui Yang(杨苏辉); Guanghui Wei(魏光辉)

    2003-01-01

    Diode-laser pumped monolithic single-frequency non-planar ring laser has the advantages of compactness,reliability and high efficiency. But when the pump power is high enough, the thermal effect will be seriousand the high-order transverse modes will appear. Therefore the single-mode output power is limited. Inthis paper, the mechanism of generating the high-order transverse modes in the monolithic unidirectionalnon-planar ring cavity is analyzed using ray tracing method. The calculated results are in agreement withthe experiments.

  5. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  6. Progress Toward a Monolithically Integrated Coherent Diode Laser Array.

    Science.gov (United States)

    1981-02-20

    B-i C. DBR AND ACTIVE-PASSIVE LASER FABRICATION PROCEDURE ............... C-I D. ELECTROCHEMICAL DEPOSITION OF OHMIC CONTACTS FOR DIODE... LASER FABRICATION PROCEDURE C.1 SAMPLE EXAMINATION 1. Etch sample in 1:1:8 A-B etch (A:B:H 20 mp) for 5 sec. 2. Photograph all four corners of sample to...GaAlAs waveguide att ,uation coeffi- cients; 1 6 the assumption that K remains the same for both DBRs simplifies con- siderably the actual DBR laser

  7. Progress toward a monolithically integrated coherent diode laser array

    Science.gov (United States)

    Evans, G. A.; Garmire, E. M.; Stoll, H. M.; Osmer, J. A.; Soady, W. E.; Lee, A. B.; Ziegler, M. P.

    1981-02-01

    Progress toward the design and fabrication of a GaAlAs semiconductor laser array capable of high average power levels (0.1 to 1.0 watt) and low (approx 1 millirad) beam divergence is reported. A large optical cavity (LOC) configuration is grown by liquid phase epitaxy. The LOC structure is characterized by photoluminescence scans, ion microprobe mass analysis (IMMA), and optical waveguiding measurements. Fabry-Perot, active-passive, and DBR lasers are fabricated using chemical and ion beam etching. Gratings formed using holographic and ion beam etching techniques provide third order feedback for the DBR lasers, and are also used as distributed beam deflectors (DBDs) and output couplers. Comparisons of the results of experiments performed on DBR lasers, DBDs, and coupled lasers are made with theoretical models. Details of the material growth, material characterization, device fabrication, experiments, and theoretical models are presented in this report.

  8. Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Feng, Wen; Liang, Song; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-06-01

    A 1.60-µm laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3×10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

  9. Calculation of focal positions in an optical head for parallel data processing with a monolithic four-beam laser diode.

    Science.gov (United States)

    Shinoda, M

    2001-03-01

    A method for calculating focal positions in a multibeam optical head by use of a multibeam laser diode, in which conditions for misalignment of the light source are taken into consideration, is introduced. One calculates the focal positions by using the practical characteristics of a monolithic four-beam laser diode and the practical specifications of the optics in an optical head. The results show that each focal position is defocused mainly as a result of curvature of the fields of the lenses. The adaptability of focal positions for various calculated conditions is discussed from the standpoint of depth of focus.

  10. Red emitting monolithic dual wavelength DBR diode lasers for shifted excitation Raman difference spectroscopy

    Science.gov (United States)

    Sumpf, B.; Maiwald, M.; Müller, A.; Bugge, F.; Fricke, J.; Ressel, P.; Pohl, J.; Erbert, G.; Tränkle, G.

    2014-02-01

    Raman lines are often obscured by background light or fluorescence especially when investigating biological samples or samples containing impurities. Shifted excitation Raman difference spectroscopy (SERDS) is a technique to overcome this. By exciting the sample with two slightly shifted wavelengths, it is possible to separate the Raman lines and distortions. In this paper, monolithic dual wavelength DBR diode lasers meeting the demands of Raman spectroscopy and SERDS will be presented. The wavelengths are stabilized and selected by using deeply-etched 10th order surface gratings with different periods manufactured using i-line wafer stepper lithography. Two possible resonator concepts, i.e. a mini-array of two parallel DBR RW-lasers and a Y-branch DBR laser, will be compared. Established excitation wavelengths for Raman spectroscopy at 671 nm and 785 nm are chosen. The total laser length is 3 mm; the ridge width is 2.2 μm for the 785 nm devices and 5 μm for the 671 nm lasers. The length of the DBR gratings is 500 μm. The devices at 671 nm reach output powers up to 100 mW having an emission width smaller than 12 pm (FWHM). The 785 nm lasers show output powers up to 200 mW and a narrow emission below 22 pm. For the dual wavelength lasers the spectral distance between the two excitation lines is about 0.5 nm as targeted. The power consumption at both wavelengths is below 1 W. These data proof that the devices are well suited for their application in portable Raman measurement systems such as handheld devices using SERDS.

  11. 3.1 kW monolithic MOPA configuration fibre laser bidirectionally pumped by non-wavelength-stabilized laser diodes

    Science.gov (United States)

    Yan, Ping; Huang, Yusheng; Sun, Junyi; Li, Dan; Wang, Xuejiao; Gong, Mali; Xiao, Qirong

    2017-08-01

    We report an all-fibre monolithic master oscillator power amplifier configuration fibre laser bidirectionally pumped by non-wavelength-stabilized laser diodes. The Raman Effect and thermal problems can be effectively suppressed by the bidirectional pumping configuration. A small core diameter double-clad ytterbium-doped fibre is utilized in the amplifier for a refined beam quality control. As a result, a maximum output power of 3122 W and an optical-to-optical efficiency of 81.4% are achieved with near-diffraction-limitation beam quality. No mode instability was detected via a photodiode. Also, the output power instability was measured to be less than 0.6% during a continuous operation of 2 h.

  12. Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

    Science.gov (United States)

    Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

    1988-01-01

    56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

  13. Monolithic Y-branch dual wavelength DBR diode laser at 671nm for shifted excitation Raman difference spectroscopy

    Science.gov (United States)

    Maiwald, M.; Fricke, J.; Ginolas, A.; Pohl, J.; Sumpf, B.; Erbert, G.; Tränkle, G.

    2013-05-01

    A dual-wavelength laser diode source suitable for shifted excitation Raman difference spectroscopy (SERDS) is presented. This monolithic device contains two ridge waveguide (RW) sections with wavelengths adjusted distributed Bragg reflection (DBR) gratings as rear side mirrors. An integrated Y-branch coupler guides the emission into a common output aperture. The two wavelengths are centered at 671 nm with a well-defined spectral spacing of about 0.5 nm, i.e. 10 cm-1. Separate RW sections can be individually addressed by injection current. An output power up to 110 mW was achieved. Raman experiments demonstrate the suitability of these devices for SERDS.

  14. Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

    CERN Document Server

    Forget, S; Balembois, F; Georges, P; Landru, N; Feve, J P; Lin, J; Weng, Z; Forget, Sebastien; Druon, Frederic; Balembois, Francois; Georges, Patrick; Landru, Nicolas; Feve, Jean Philippe; Lin, Jiali; Weng, Zhiming

    2006-01-01

    the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

  15. One-Watt level mid-IR output, singly resonant, continuous-wave optical parametric oscillator pumped by a monolithic diode laser

    NARCIS (Netherlands)

    Nieuwenhuis, Albert F.; Lee, Christopher James; Sumpf, Bernd; van der Slot, Petrus J.M.; Erbert, Götz; Boller, Klaus J.

    2010-01-01

    We report more than 1.1 Watt of idler power at 3373 nm in a singly resonant optical parametric oscillator (SRO), directly pumped by a single-frequency monolithic tapered diode laser. The SRO is based on a periodically poled MgO:LiNbO3 crystal in a four mirror cavity and is excited by 8.05 W of 1062

  16. Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-08-01

    We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3° × 10.6°, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  17. Rayleigh length dependent SHG conversion at 488nm using a monolithic DBR tapered diode laser

    Science.gov (United States)

    Blume, G.; Uebernickel, M.; Fiebig, C.; Paschke, K.; Ginolas, A.; Eppich, B.; Güther, R.; Erbert, G.

    2008-02-01

    We present a study of the single pass SHG conversion as a function of the Rayleigh length (RL) and beam diameter (BD) using a monolithic distributed Bragg reflector (DBR) tapered laser. The DBR tapered laser has a 6th order surface grating and a ridge waveguide. Single longitudinal mode emission at 978nm with a side-mode suppression ratio of more than 40dB and at an output power of 2.7W at 15°C have been obtained in continuous wave operation. The beam was collimated using an aspheric and a cylindrical lens and focused using a variety of lenses with various focal lengths. The resulting caustics were acquired using a camera and used for SHG in a 5cm periodically poled LiNbO 3 (PPLN) crystal. This allowed an investigation of the dependency of the SHG conversion efficiency on the RLs and BDs. We obtained 330mW of output power at 488nm using the optimal focus length. The experiments showed that an optimum conversion requires longer focal length's then forecasted by Boyd-Kleinman's theory, which is explained due to the partial coherence. We developed an extension of that theory to account for that partial coherence, which bases in principle on a mismatch related general Agrawal's nonlinear integration kernel. We use this theory to explain the dependence of the SHG efficiency from the beam propagation factor M2.

  18. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  19. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.;

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  20. High-power monolithic single-mode diode lasers employing active photonic lattices

    Science.gov (United States)

    Botez, Dan

    2003-06-01

    Photonic-lattice structures with modulated gain, that is active photonic lattices (APLs), of large index steps and gain preferentially enhanced on the low-index lattice sites have been used, as early as 1988, for effective lateral-mode control range in large-aperture (100-200 microns) high-power coherent devices. Photonic-bandpass (PBP) structures relying on long-range resonant leaky-wave coupling, so called ROW arrays, have allowed stable, near-diffraction-limited beam operation to powers as high as 1.6W CW and 10W peak pulsed. Photonic-bandgap (PBG) structures with a built-in lattice defect, so called ARROW lasers, have provided up to 0.5W peak-pulsed stable, single-mode power and hold the potential for 1W CW reliable single-mode operation from apertures 8-10 microns wide. The solution for high-efficiency surface emission, from 2nd-order DFB/DBR lasers, in an orthonormal, single-lobe beam pattern was found in 2000. Recently, single-lobe and single-mode operation in a diffraction-limited beam orthonormal to the chip surface was demonstrated from 1.5mm-long DFB/DBR ridge-guide lasers. That opens the way for the realization of 2-D surface-emitting,2nd-order APLs for the stable generation of watts of CW single-lobe, single-mode power from large 2-D apertures, as well as scalability of such devices at the wafer level.

  1. Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy

    Science.gov (United States)

    Sasaki, Tatsuya; Yamaguchi, Masayuki; Kitamura, Mitsuhiro

    1994-12-01

    Selective metalorganic vapor phase epitaxy (MOVPE) was used to grow InGaAsP/InP layers for fabricating multi-wavelength laser diodes. Multiple quantum well (MQW) active and passive waveguides were simultaneously grown by one step selective growth. The selectively grown layer thickness increases with the mask stripe width. This growth enhancement can be used to control the lasing wavelength of distributed Bragg reflector (DBR) laser diodes, because the effective refractive index of the MQW passive waveguide at the DBR region can be controlled by the mask stripe width. This simple technique was used to fabricate multi-wavelength MQW-DBR laser diodes. In the selective growth, the MQW structure was grown under 150 Torr to obtain large bandgap energy shift for the MQW passive waveguides compared to the active waveguide, which was effective for wide wavelength tuning range. On the contrary, a bulk InGaAsP guide layer was grown under 35 Torr to prevent too much composition shift and maintain high crystalline quality of the MQW passive waveguide. For 10 consecutive laser diodes, a wavelength span of over 20 nm with accurate wavelength control was achieved.

  2. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  3. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Science.gov (United States)

    Hazari, Arnab; Aiello, Anthony; Ng, Tien-Khee; Ooi, Boon S.; Bhattacharya, Pallab

    2015-11-01

    III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ˜3 × 1010 cm-2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10-17 cm2, respectively. The peak emission is observed at ˜1.2 μm.

  4. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  5. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  6. Lighting with laser diodes

    Science.gov (United States)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  7. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array%应用于大功率激光二极管列阵的单片集成微通道制冷热沉

    Institute of Scientific and Technical Information of China (English)

    马杰慧; 方高瞻; 蓝永生; 马骁宇

    2005-01-01

    介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉.这种热沉已制造并经过测试.10叠层的激光二极管列阵的热阻为0.121℃/W.相邻两个激光条的间距是1.17mm.在20%高占空比条件下,波长为808nm左右,峰值功率可以达到611W.%A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.

  8. Composite resonator vertical cavity laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Hou, H.Q.; Chow, W.W.; Geib, K.M.; Hammons, B.E.

    1998-05-01

    The use of two coupled laser cavities has been employed in edge emitting semiconductor lasers for mode suppression and frequency stabilization. The incorporation of coupled resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the interaction between the cavities. Composite resonators can be utilized to control spectral and temporal properties within the laser; previous studies of coupled cavity vertical cavity lasers have employed photopumped structures. The authors report the first composite resonator vertical cavity laser diode consisting of two optical cavities and three monolithic distributed Bragg reflectors. Cavity coupling effects and two techniques for external modulation of the laser are described.

  9. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    KAUST Repository

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  10. Monolithically integrated Ge CMOS laser

    Science.gov (United States)

    Camacho-Aguilera, Rodolfo

    2014-02-01

    Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm2. Improvements in Ge work

  11. Monolithically integrated absolute frequency comb laser system

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  12. Diode pumped solid-state laser oscillators for spectroscopic applications

    Science.gov (United States)

    Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

    1987-01-01

    The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

  13. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  14. Coupled Resonator Vertical Cavity Laser Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Chow, W.W.; Fischer, A.J.; Allerman, A.A.; Hou, H.Q.; Geib, K.M.

    1999-07-22

    For many applications, the device performance of edge emitting semiconductor lasers can be significantly improved through the use of multiple section devices. For example, cleaved coupled cavity (C3) lasers have been shown to provide single mode operation, wavelength tuning, high speed switching, as well as the generation of short pulses via mode-locking and Q-switching [1]. Using composite resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the coupling between the monolithic cavities, incorporate passive or active resonators which are spectrally degenerate or detuned, and to fabricate these devices in 2-dimensional arrays. Composite resonator vertical cavity lasers (CRVCL) have been examined using optical pumping and electrical injection [2-5]. We report on CRVCL diodes and show that efficient modulation of the laser emission can be achieved by either forward or reverse biasing the passive cavity within a CRVCL.

  15. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  16. "Diode Pumped Solid State Lasers At 2 And 3 µm"

    Science.gov (United States)

    Esterowitz, Leon

    1988-06-01

    took a decade to transform a fragile device requiring cryogenic temperatures into one capable of emitting a continuous beam at room temperature. In the last few years the rapid progress in fabricating diode lasers has increased interest in developing diode pumped solid state lasers. Device fabrication improvements such as double hetero-structures, multiple quantum well structures, monolithic phased arrays and multiple stripe lasers which were made possible by improved manufacturing technologies have produced a dramatic reduction of threshold current and increases of slope efficiency, lifetime and output power.

  17. Components for monolithic fiber chirped pulse amplification laser systems

    Science.gov (United States)

    Swan, Michael Craig

    The first portion of this work develops techniques for generating femtosecond-pulses from conventional fabry-perot laser diodes using nonlinear-spectral-broadening techniques in Yb-doped positive dispersion fiber ampliers. The approach employed an injection-locked fabry-perot laser diode followed by two stages of nonlinear-spectral-broadening to generate sub-200fs pulses. This thesis demonstrated that a 60ps gain-switched fabry-perot laser-diode can be injection-locked to generate a single-longitudinal-mode pulse and compressed by nonlinear spectral broadening to 4ps. Two problems have been identified that must be resolved before moving forward with this approach. First, gain-switched pulses from a standard diode-laser have a number of characteristics not well suited for producing clean self-phase-modulation-broadened pulses, such as an asymmetric temporal shape, which has a long pulse tail. Second, though parabolic pulse formation occurs for any arbitrary temporal input pulse profile, deviation from the optimum parabolic input results in extensively spectrally modulated self-phase-modulation-broadened pulses. In conclusion, the approach of generating self-phase-modulation-broadened pulses from pulsed laser diodes has to be modified from the initial approach explored in this thesis. The first Yb-doped chirally-coupled-core ber based systems are demonstrated and characterized in the second portion of this work. Robust single-mode performance independent of excitation or any other external mode management techniques have been demonstrated in Yb-doped chirally-coupled-core fibers. Gain and power efficiency characteristics are not compromised in any way in this novel fiber structure up to the 87W maximum power achieved. Both the small signal gain at 1064nm of 30.3dB, and the wavelength dependence of the small signal gain were comparable to currently deployed large-mode-area-fiber technology. The efficiencies of the laser and amplifier were measured to be 75% and 54

  18. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    Science.gov (United States)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  19. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  20. Diode laser and endoscopic laser surgery.

    Science.gov (United States)

    Sullins, Kenneth E

    2002-05-01

    Two functionally important differences exist between the diode laser and the carbon dioxide (CO2) laser (used more commonly in small animal surgery). Diode laser energy is delivered through a quartz fiber instead of being reflected through an articulated arm or waveguide. Quartz fibers are generally more flexible and resilient than waveguides and can be inserted through an endoscope for minimally invasive procedures. Laser-tissue interaction is the other significant difference. The CO2 laser is completely absorbed by water, which limits the effect to visible tissue. The diode wavelength is minimally absorbed by water and may affect tissue as deep as 10 mm below the surface in the free-beam mode. With proper respect for the tissue effect, these differences can be used to the advantage of the patient.

  1. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    Directory of Open Access Journals (Sweden)

    Clayton Cozzan

    2016-10-01

    Full Text Available With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min. The resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

  2. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    Science.gov (United States)

    Cozzan, Clayton; Brady, Michael J.; O'Dea, Nicholas; Levin, Emily E.; Nakamura, Shuji; DenBaars, Steven P.; Seshadri, Ram

    2016-10-01

    With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). The resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

  3. New laser materials for laser diode pumping

    Science.gov (United States)

    Jenssen, H. P.

    1990-01-01

    The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

  4. Quantum Noise in Laser Diodes

    Science.gov (United States)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  5. Integration of mode-locked diode lasers

    Science.gov (United States)

    Coleman, A. Catrina; Hou, Lianping; Marsh, John H.

    2016-03-01

    Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with advantages over more conventional sources in compactness, robustness, performance stability, power consumption, and cost savings. The use of quantum well intermixing (QWI) to integrate passive sections and surface etched distributed Bragg reflectors (DBR) into monolithic laser cavity will be described. The performance of the devices will be presented.

  6. Diode Pumped Fiber Laser.

    Science.gov (United States)

    1984-12-01

    FIBER LASERS I. Nd:YAG FIBER LASER FABRICATION .............. 5 A. FIBER GROWTH .......................... 5 B. FIBER PROCESSING 7...1.32 pm FIBER LASERS I. Nd:YAG FIBER LASER FABRICATION A. FIBER GROWTH The single crystal fibers used in this work were grown at Stanford University

  7. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  8. Materials for diode pumped solid state lasers

    Science.gov (United States)

    Chase, L. L.; Davis, L. E.; Krupke, W. F.; Payne, S. A.

    1991-07-01

    The advantages of semiconductor diode lasers and laser arrays as pump sources for solid state lasers are reviewed. The properties that are desirable in solid state laser media for various diode pumping applications are discussed, and the characteristics of several promising media are summarized.

  9. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  10. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    OpenAIRE

    Clayton Cozzan; Brady, Michael J.; Nicholas O’Dea; Emily E. Levin; Shuji Nakamura; Steven P. DenBaars; Ram Seshadri

    2016-01-01

    With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). The resulting transluc...

  11. Monolithic microchannel heatsink

    Science.gov (United States)

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  12. Diode laser power module for beamed power transmission

    Science.gov (United States)

    Choi, S. H.; Williams, M. D.; Lee, J. H.; Conway, E. J.

    1991-01-01

    Recent progress with powerful, efficient, and coherent monolithic diode master-oscillator/power-amplifier (M-MOPA) systems is promising for the development of a space-based diode laser power station. A conceptual design of a 50-kW diode laser power module was made for space-based power stations capable of beaming coherent power to the moon, Martian rovers, or other satellites. The laser diode power module consists of a solar photovoltaic array or nuclear power source, diode laser arrays (LDAs), a phase controller, beam-steering optics, a thermal management unit, and a radiator. Thermal load management and other relevant aspects of the system (such as power requirements and system mass) are considered. The 50-kW power module described includes the highest available efficiency of LD M-MOPA system to date. However, the overall efficiency of three amplifier stages, including the coupling efficiency, turns out to be 55.5 percent. Though a chain of PA stages generates a high-power coherent beam, there is a penalty due to the coupling loss between stages. The specific power of the 50-kW module using solar power is 6.58 W/kg.

  13. Monolithic Rare Earth Doped PTR Glass Laser Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The main goal of the project is to demonstrate the feasibility of a monolithic solid state laser on the basis of PTR glass co-doped with luminescent rare earth ions....

  14. Modulation of Frequency Doubled DFB-Tapered Diode Lasers for Medical Treatment

    DEFF Research Database (Denmark)

    Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

    2017-01-01

    The use of visible lasers for medical treatments is on the rise, and together with this comes higher expectations for the laser systems. For many medical treatments, such as ophthalmology, doctors require pulse on demand operation together with a complete extinction of the light between pulses. We...... have demonstrated power modulation from 0.1 Hz to 10 kHz at 532 nm with a modulation depth above 97% by wavelength detuning of the laser diode. The laser diode is a 1064 nm monolithic device with a distributed feedback (DFB) laser as the master oscillator (MO), and a tapered power amplifier (PA...

  15. Physics and Applications of Laser Diode Chaos

    CERN Document Server

    Sciamanna, Marc

    2015-01-01

    An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  16. Effects of radiation on laser diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  17. Advances in high power semiconductor diode lasers

    Science.gov (United States)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  18. Monolithic optofluidic ring resonator lasers created by femtosecond laser nanofabrication.

    Science.gov (United States)

    Chandrahalim, Hengky; Chen, Qiushu; Said, Ali A; Dugan, Mark; Fan, Xudong

    2015-05-21

    We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ mm(-2). Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 10(4), which is limited by both solvent absorption and scattering loss. In particular, a Q-factor resulting from the scattering loss can be as high as 4.2 × 10(4), suggesting the feasibility of using a femtosecond laser to create high quality optical cavities.

  19. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  20. Hermetic diode laser transmitter module

    Science.gov (United States)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  1. Comparison of Monolithic Optical Frequency Comb Generators Based on Passively Mode-Locked Lasers for Continuous Wave mm-Wave and Sub-THz Generation

    DEFF Research Database (Denmark)

    Criado, A. R.; de Dios, C.; Acedo, P.;

    2012-01-01

    In this paper, two different Passive Mode-Locked Laser Diodes (PMLLD) structures, a Fabry–Perot cavity and a ring cavity laser are characterized and evaluated as monolithic Optical Frequency Comb Generators (OFCG) for CW sub-THz generation. An extensive characterization of the devices under study...

  2. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    Science.gov (United States)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-09-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  3. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    Science.gov (United States)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-01-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  4. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    Science.gov (United States)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  5. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  6. Diode-pumped laser altimeter

    Science.gov (United States)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  7. Interferometry and Holography With Diode Laser Light

    CERN Document Server

    Lunazzi, Jose Joaquin

    2016-01-01

    We made an interferometric Michelson type setup and a simple holographic setup to demonstrate the feasibility of interferometric and holographic techniques by means of a diode laser. The laser was made by using a common diode available as a penlight element (less than R$ 15,00 value) and a simple stabilized 110 VCA- 3 VCC power supply. Interference fringes and holograms of small objects where obtained very similar to those of a helium-neon laser based setup.

  8. Compact high brightness diode laser emitting 500W from a 100μm fiber

    Science.gov (United States)

    Heinemann, Stefan; Fritsche, Haro; Kruschke, Bastian; Schmidt, Torsten; Gries, Wolfgang

    2013-02-01

    High power, high brightness diode lasers are beginning to compete with solid state lasers, i.e. disk and fiber lasers. The core technologies for brightness scaling of diode lasers are optical stacking and dense spectral combining (DSC), as well as improvements of the diode material. Diode lasers have the lowest cost of ownership, highest efficiency and most compact design among all lasers. Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. Multiple single emitters, each rated at 12 W, are stacked in the fast axis with a monolithic slow axis collimator (SAC) array. Volume Bragg Gratings (VBG) stabilizes the wavelength and narrow the linewidth to less than 1 nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. Subsequently polarization multiplexing generates 450 W with a beam quality of 4.5 mm*mrad. Fast control electronics and miniaturized switched power supplies enable pulse rise times of less than 10 μs, with pulse widths continuously adjustable from 20 μs to cw. Further power scaling up to multi-kilowatts can be achieved by multiplexing up to 16 channels. The power and brightness of these systems enables the use of direct diode lasers for cutting and welding. The technologies can be transferred to other wavelengths to include 793 nm and 1530 nm. Optimized spectral combining enables further improvements in spectral brightness and power.

  9. Advanced laser diodes for sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

    2000-01-01

    The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

  10. High power coherent polarization locked laser diode.

    Science.gov (United States)

    Purnawirman; Phua, P B

    2011-03-14

    We have coherently combined a broad area laser diode array to obtain high power single-lobed output by using coherent polarization locking. The single-lobed coherent beam is achieved by spatially combining four diode emitters using walk-off crystals and waveplates while their phases are passively locked via polarization discrimination. While our previous work focused on coherent polarization locking of diode in Gaussian beams, we demonstrate in this paper, the feasibility of the same polarization discrimination for locking multimode beams from broad area diode lasers. The resonator is designed to mitigate the loss from smile effect by using retro-reflection feedback in the cavity. In a 980 nm diode array, we produced 7.2 W coherent output with M2 of 1.5x11.5. The brightness of the diode is improved by more than an order of magnitude.

  11. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  12. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  13. Laser diode initiated detonators for space applications

    Science.gov (United States)

    Ewick, David W.; Graham, J. A.; Hawley, J. D.

    1993-01-01

    Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

  14. External cavity diode laser around 657 nm

    Institute of Scientific and Technical Information of China (English)

    Desheng Lǖ (吕德胜); Kaikai Huang (黄凯凯); Fengzhi Wang (王凤芝); DonghaiYang (杨东海)

    2003-01-01

    Operating a laser diode in an external cavity, which provides frequency-selective feedback, is a very effective method to tune the laser frequency to a range far from its free running frequency. For the Ca atomic Ramsey spectroscopy experiment, we have constructed a 657-nm laser system based on the LittmanMetcalf configuration with a 660-nm commercial laser diode. Continuously 10-GHz tuning range was achieved with about 100-kHz spectral linewidth, measured with beat-note spectrum of two identical laser systems.

  15. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  16. Tapered diode laser pumped 946 nm Nd:YAG laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2009-01-01

    We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

  17. Determining Extinction Ratio Of A Laser Diode

    Science.gov (United States)

    Unger, Glenn L.

    1992-01-01

    Improved technique to determine extinction ratio of pulsed laser diode based partly on definition of extinction ratio applicable to nonideal laser pulses. Heretofore, determinations involved assumption of ideal laser pulses, and neglected optical power from background light. Because power fluctuates during real pulse, more realistic to define extinction ratio in terms of energy obtained.

  18. High Power Diode Lasers Technology and Applications

    CERN Document Server

    Bachmann, Friedrich; Poprawe, Reinhart

    2007-01-01

    In a very comprehensive way this book covers all aspects of high power diode laser technology for materials processing. Basics as well as new application oriented results obtained in a government funded national German research project are described in detail. Along the technological chain after a short introduction in the second chapter diode laser bar technology is discussed regarding structure, manufacturing technology and metrology. The third chapter illuminates all aspects of mounting and cooling, whereas chapter four gives wide spanning details on beam forming, beam guiding and beam combination, which are essential topics for incoherently coupled multi-emitter based high power diode lasers. Metrology, standards and safety aspects are the theme of chapter five. As an outcome of all the knowledge from chapter two to four various system configurations of high power diode lasers are described in chapter six; not only systems focussed on best available beam quality but especially also so called "modular" set...

  19. Microchip laser based on Yb:YAG/V:YAG monolith crystal

    Science.gov (United States)

    Nejezchleb, Karel; Šulc, Jan; Jelínková, Helena; Škoda, Václav

    2016-03-01

    V:YAG crystal was investigated as a passive Q-switch of longitudinally diode-pumped microchip laser, emitting radiation at wavelength 1030.5 nm. This laser was based on diffusion bonded monolith crystal (diameter 3 mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3 mm long) and saturable absorber (V:YAG crystal, 2 mm long, initial transmission 86 % @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces (pump mirror HT @ 968 nm and HR @ 1031 nm on Yb:YAG part, output coupler with reflection 55 % @ 1031 nm on the V:YAG part). For longitudinal CW pumping of Yb:YAG part, a fibre coupled (core diameter 100 μm, NA = 0.22, emission @ 968 nm) laser diode was used. The laser threshold was 3.8W. The laser slope efficiency for output mean in respect to incident pumping was 16 %. The linearly polarized generated transversal intensity beam profile was close to the fundamental Gaussian mode. The generated pulse length, stable and mostly independent on pumping power, was equal to 1.3 ns (FWHM). The single pulse energy was increasing with the pumping power and for the maximum pumping 9.7W it was 78 μJ which corresponds to the pulse peak-power 56 kW. The maximum Yb:YAG/V:YAG microchip laser mean output power of 1W was reached without observable thermal roll-over. The corresponding Q-switched pulses repetition rate was 13.1 kHz.

  20. Resonant-cavity based monolithic white light-emitting diode

    Science.gov (United States)

    Huang, Lirong; Huang, Dexiu; Wen, Feng

    2007-11-01

    We propose a new scheme of resonant-cavity (RC) based monolithic white LED, it relaxes the hard requirement of high internal quantum efficiency of yellow multi-quantum (MQW) and offers an easy way to obtain high luminous efficacy white light emission. In the proposed white LED, the blue MQW and yellow MQW active layer are embedded in a resonant-cavity defined by the bottom distributed Bragg reflector(DBR) and top DBR. For a optimal design of RC-based white LED, the extraction efficiency for yellow light is enhanced, while that for blue light is suppressed, thus intensity ratio of yellow light in the emitting light is increased, which not only helps to obtain white emission in spite of the low internal quantum efficiency of yellow light, but also doubles luminous efficacy. The color coordinates and luminous flux of the emitting light from RC-based white LED are calculated and the performance dependence on directionality is investigated.

  1. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin;

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  2. Drivers for High Power Laser Diodes

    Institute of Scientific and Technical Information of China (English)

    Yankov P; Todorov D; Saramov E

    2006-01-01

    During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack,and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd:YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.

  3. Deterministic polarization chaos from a laser diode

    CERN Document Server

    Virte, Martin; Thienpont, Hugo; Sciamanna, Marc

    2014-01-01

    Fifty years after the invention of the laser diode and fourty years after the report of the butterfly effect - i.e. the unpredictability of deterministic chaos, it is said that a laser diode behaves like a damped nonlinear oscillator. Hence no chaos can be generated unless with additional forcing or parameter modulation. Here we report the first counter-example of a free-running laser diode generating chaos. The underlying physics is a nonlinear coupling between two elliptically polarized modes in a vertical-cavity surface-emitting laser. We identify chaos in experimental time-series and show theoretically the bifurcations leading to single- and double-scroll attractors with characteristics similar to Lorenz chaos. The reported polarization chaos resembles at first sight a noise-driven mode hopping but shows opposite statistical properties. Our findings open up new research areas that combine the high speed performances of microcavity lasers with controllable and integrated sources of optical chaos.

  4. Novel Single-Frequency Diode Pumped Solid-State Lasers and Their Applications in Laser Ranging and Velocimetry

    Institute of Scientific and Technical Information of China (English)

    杨苏辉; 吴克瑛; 魏光辉

    2001-01-01

    Two models of laser diode pumped unidirectional single-frequency ring lasers with maximum single-frequency output powers of 1 W and 780mW are investigated. The statistical linewidth of the free-run laser is measured to be 2.1 kHz within 5μs by using a single-mode fibre link. We use the monolithic laser to measure the angular speed of a spinning motor and simulate a linearly frequency modulated continuous-wave ladar system in the laboratory.

  5. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  6. Investigation of radial temperature gradients in diode pumped alkali lasers using tunable diode laser absorption spectroscopy

    Science.gov (United States)

    Fox, Charles D.; Perram, Glen P.

    2012-03-01

    Heat loads in Diode Pumped Alkali Lasers (DPAL) have been investigated using a diode laser to probe the radial dependence of the absorbance. A TiS pump laser heats the medium in a T=50-100°C cesium heat pipe with 5 Torr nitrogen used for quenching. A tunable diode laser probes the spectral absorbance of the cesium cell. Local alkali concentration, temperature, and saturation broadening modify Voigt lineshapes in the wing of the hyperfine split lines. The temperature within the pumped volume exceeds the wall temperature by almost 200 C.

  7. Qualification and Selection of Flight Diode Lasers for Space Applications

    Science.gov (United States)

    Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

    2010-01-01

    The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode

  8. Monolithic photonic integration of suspended light emitting diode, waveguide and photodetector

    CERN Document Server

    Wang, Yongjin; Gao, Xumin; Cai, Wei; Xu, Yin; Yuan, Jialei; Zhu, Guixia; Yang, Yongchao; Cao, Xun; Zhu, Hongbo; Gruenberg, Peter

    2015-01-01

    We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the on-chip optical interconnects. This work paves the way towards novel active electro-optical sensing system and planar optical communication in the visible range.

  9. Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

    Science.gov (United States)

    Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong

    2013-10-01

    We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep InGaN QWs and GaN barriers. Without using any phosphors, this monolithic LED chip can be tuned to realize wide-range multicolor emissions from red to yellow under different injection currents. In partical, when the injection current reaches an upper level above 100 mA, the LEDs will achieve white emission with a very high color rending index (CRI) of 85.6. This color-tunable characteristic is attributed to the carrier redistribution in the shallow/deep QWs and the energy band filling effect as well.

  10. Rugged, Tunable Extended-Cavity Diode Laser

    Science.gov (United States)

    Moore, Donald; Brinza, David; Seidel, David; Klipstein, William; Choi, Dong Ho; Le, Lam; Zhang, Guangzhi; Iniguez, Roberto; Tang, Wade

    2007-01-01

    A rugged, tunable extended-cavity diode laser (ECDL) has been developed to satisfy stringent requirements for frequency stability, notably including low sensitivity to vibration. This laser is designed specifically for use in an atomic-clock experiment to be performed aboard the International Space Station (ISS). Lasers of similar design would be suitable for use in terrestrial laboratories engaged in atomic-clock and atomic-physics research.

  11. Phase Noise Reduction of Laser Diode

    Science.gov (United States)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  12. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  13. Stirling-Cycle Cooling For Tunable Diode Laser

    Science.gov (United States)

    Durso, Santo S.; May, Randy D.; Tuchscherer, Matthew A.; Webster, Christopher R.

    1991-01-01

    Miniature Stirling-cycle cooler effective in continously cooling PbSnTe tunable diode laser to stable operating temperature near 80 K. Simplifies laboratory diode-laser spectroscopy and instruments for use aboard aircraft and balloons.

  14. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

    Science.gov (United States)

    Jiang, Qi; Tang, Mingchu; Chen, Siming; Wu, Jiang; Seeds, Alwyn; Liu, Huiyun

    2014-09-22

    We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

  15. Diode pumped Nd:YAG laser development

    Science.gov (United States)

    Reno, C. W.; Herzog, D. G.

    1976-01-01

    A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

  16. Diode lasers and photonic integrated circuits

    CERN Document Server

    Coldren, Larry A; Mashanovitch, Milan L

    2011-01-01

    Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book wil

  17. Tunable diode laser control by a stepping Michelson interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Valentin, A.; Nicolas, C.; Henry, L.; Mantz, A.W.

    1987-01-01

    A tunable diode laser beam is sent through a Michelson interferometer and is locked to a fringe of the diode laser interferometer pattern by controlling the diode laser polarization current. The path difference change of the Michelson interferometer is controlled step by step by a stabilized He--Ne red laser. When the interferometer path differences increases or decreases, the polarization current of the diode is forced to change in order to preserve the interference order of the diode beam. At every step the diode frequency is accurately fixed and its phase noise significantly reduced.

  18. Spectral performance of monolithic holmium and thulium lasers

    Science.gov (United States)

    Storm, Mark E.

    1991-01-01

    Fabry-Perot resonators have been used to demonstrate single-mode lasing of holmium and neodymium YAG. The previous demonstration in the holmium laser required TE cooling the crystal to -15 C in order to achieve threshold. The present study extends that result, demonstrating +25 C operation in a 1-mm thick plano/plano resonator. The experimental configuration of lasing both the holmium and thulium lasers used a 500-mW diode laser which was collimated, circularized, and focused into a beam radius of 60 microns. The single-frequency lasing spectrum of the holmium laser is shown. By adjusting the mirror reflectivity, the ability to control the laser's wavelength is demonstrated. This laser operated with 11 mW of optical power, a 57-percent slope efficiency, and 120-mW threshold vs absorbed diode power laser for the 60-micron beam radius. The thulium laser operated very efficiently at room temperature, but on seven longitudinal modes. The Tm:TAG laser exhibits typical characteristics of spatial hole burning not seen in the Ho:Tm:YAG for flat/flat resonators.

  19. Monolithic all-fiber repetition-rate tunable gain-switched single-frequency Yb-doped fiber laser.

    Science.gov (United States)

    Hou, Yubin; Zhang, Qian; Qi, Shuxian; Feng, Xian; Wang, Pu

    2016-12-12

    We report a monolithic gain-switched single-frequency Yb-doped fiber laser with widely tunable repetition rate. The single-frequency laser operation is realized by using an Yb-doped distributed Bragg reflection (DBR) fiber cavity, which is pumped by a commercial-available laser diode (LD) at 974 nm. The LD is electronically modulated by the driving current and the diode output contains both continuous wave (CW) and pulsed components. The CW component is set just below the threshold of the single-frequency fiber laser for reducing the requirement of the pump pulse energy. Above the threshold, the gain-switched oscillation is trigged by the pulsed component of the diode. Single-frequency pulsed laser output is achieved at 1.063 μm with a pulse duration of ~150 ns and a linewidth of 14 MHz. The repetition rate of the laser output can be tuned between 10 kHz and 400 kHz by tuning the electronic trigger signal. This kind of lasers shows potential for the applications in the area of coherent LIDAR etc.

  20. Study on the Beam Quality of Uncoupled Laser Diode Arrays

    Institute of Scientific and Technical Information of China (English)

    GAO Chunqing; WEI Guanghui

    2001-01-01

    The beam quality of uncoupled laser diode array is studied theoretically and experimentally. By calculating the second order moments of the beam emitted from the laser diode array, the dependence of the M2-factor of the laser diode array on the M2-factor of the single emitter, the ratio of the emitting region to the non-emitting space, and the number of emitters, has been deduced. From the measurement of the beam propagation the M2-factor of a laser diode bar is experimentally determined. The measured M2-factor of the laser diode bar agrees with the theoretical prediction.

  1. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse spectrosc......Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse......, the obtained results clearly strengthen the application potential of diode lasers, including the biomedical field....

  2. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.;

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  3. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...... application in MLLs. Improved QW laser performance was demonstrated using the asymmetric barrier layer approach. The analysis of the gain characteristics showed that the high population inversion beneficial for noise reduction cannot be achieved for 10 GHz QW MLLs and would have required lowering the modal...

  4. Remote Sensing with Commutable Monolithic Laser and Detector

    Science.gov (United States)

    2016-01-01

    The ubiquitous trend toward miniaturized sensing systems demands novel concepts for compact and versatile spectroscopic tools. Conventional optical sensing setups include a light source, an analyte interaction region, and a separate external detector. We present a compact sensor providing room-temperature operation of monolithic surface-active lasers and detectors integrated on the same chip. The differentiation between emitter and detector is eliminated, which enables mutual commutation. Proof-of-principle gas measurements with a limit of detection below 400 ppm are demonstrated. This concept enables a crucial miniaturization of sensing devices. PMID:27785455

  5. Development of monolith Nd:YAG /Cr+4:YAG passively Q-switched microchip laser

    Science.gov (United States)

    Izhnin, Ihor; Vakiv, Mykola; Izhnin, Aleksandr; Syvorotka, Igor; Ubizskii, Sergii; Syvorotka, Ihor, Jr.

    2005-09-01

    The main features of passively Q-switched microchip lasers development are considered. The active medium of laser is an epitaxial structure combining an epitaxial layer of saturable absorber Cr4+:Y3Al5O12 (Cr:YAG) grown on substrate of generating crystal Nd:YAG by liquid phase epitaxy. The modulator layer has an initial optical absorption of 36 cm-1 at wavelength of lasing (1064 nm). The epitaxial layer grown on unworking side was mechanically removed and this substrate side was optically polished. The other one was processed precisely to needed thickness. The cavity's mirrors were deposited by electron beam technique directly on each side of the structure to form a rugged, monolithic resonator. Diode laser Model ATC-C4000 with lasing wavelength 808 nm provided the CW end pumping. The output pulses parameters were investigated by means of test bench consisting of photoelectric transducer FEK-15 and Digital Phosphor Oscilloscope TDS 5052B. The obtained laser parameter are as follows: pulse width (FWHM) about 1.3 ns, repetition rate 5.5 kHz, average output power about 10 mW, pulse energy 1.0 μJ, pick power 1.2 kW. The possible solutions for laser parameter improving and optimization are discussed.

  6. Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser

    Science.gov (United States)

    Oennegren, Jan; Svedin, Jan; Sahlen, Olof; Jansson, Mats; Alping, Arne G.

    1995-10-01

    Electroabsorption modulators (EA) are attractive components for very high speed digital links (up to 40 Gbit/s). The objective of the present work has been to evaluate the analog performance and use of a Franz Keldysh modulator (FK) monolithically integrated with a DFB laser (DFB/FK-modulator) operating at 1550 nm. This DFB/FK-modulator is a combination of a directly modulated laser diode and an external modulator in one chip. The analog performance is therefore depending on both the modulator bias voltage and DFB-laser bias current. The normal optical output characteristic from an EA-modulator has a strongly nonlinear behavior. The modulator described in this paper shows for low bias voltage and/or high laser current a linear bahavior. This linear behavior is mainly due to the hole pile-up effect at the p/i-interface of the modulator. In digital transmission system this hole pile-up effect is a disadvantage, but in an analog transmission system it can be used to achieve better analog performance. Measurements (and simulations) on the DFB/FK-modulator show that its analog performance competes well with direct modulated FP and DFB lasers, especially if the modulator is biased for optimum analog performance.

  7. Compact green-diode-based lasers for biophotonic bioimaging

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

    2014-01-01

    Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

  8. Free-running emerald laser pumped by laser diode

    Institute of Scientific and Technical Information of China (English)

    Zhenqiang Chen; Ge Zhang

    2006-01-01

    Free-running emerald laser pumped by 660-nm laser diode (LD) was reported. Free-running output powerof 24 mW has been obtained with overall efficiency of 1.4% and slope efficiency of 11.9% when the LD incident power was 2.56 W. The laser threshold value of emerald crystal was estimated to be 0.7 W.

  9. Coupled Resonator Vertical Cavity Laser Diode

    Energy Technology Data Exchange (ETDEWEB)

    CHOQUETTE, KENT D.; CHOW, WENG W.; FISCHER, ARTHUR J.; GEIB, KENT M.; HOU, HONG Q.

    1999-09-16

    We report the operation of an electrically injected monolithic coupled resonator vertical cavity laser which consists of an active cavity containing In{sub x}Ga{sub 1{minus}x}As quantum wells optically coupled to a passive GaAs cavity. This device demonstrates novel modulation characteristics arising from dynamic changes in the coupling between the active and passive cavities. A composite mode theory is used to model the output modulation of the coupled resonator vertical cavity laser. It is shown that the laser intensity can be modulated by either forward or reverse biasing the passive cavity. Under forward biasing, the modulation is due to carrier induced changes in the refractive index, while for reverse bias operation the modulation is caused by field dependent cavity enhanced absorption.

  10. Visible fiber lasers excited by GaN laser diodes

    Science.gov (United States)

    Fujimoto, Yasushi; Nakanishi, Jun; Yamada, Tsuyoshi; Ishii, Osamu; Yamazaki, Masaaki

    2013-07-01

    This paper describes and discusses visible fiber lasers that are excited by GaN laser diodes. One of the attractive points of visible light is that the human eye is sensitive to it between 400 and 700 nm, and therefore we can see applications in display technology. Of course, many other applications exist. First, we briefly review previously developed visible lasers in the gas, liquid, and solid-state phases and describe the history of primary solid-state visible laser research by focusing on rare-earth doped fluoride media, including glasses and crystals, to clarify the differences and the merits of primary solid-state visible lasers. We also demonstrate over 1 W operation of a Pr:WPFG fiber laser due to high-power GaN laser diodes and low-loss optical fibers (0.1 dB/m) made by waterproof fluoride glasses. This new optical fiber glass is based on an AlF3 system fluoride glass, and its waterproof property is much better than the well known fluoride glass of ZBLAN. The configuration of primary visible fiber lasers promises highly efficient, cost-effective, and simple laser systems and will realize visible lasers with photon beam quality and quantity, such as high-power CW or tunable laser systems, compact ultraviolet lasers, and low-cost ultra-short pulse laser systems. We believe that primary visible fiber lasers, especially those excited by GaN laser diodes, will be effective tools for creating the next generation of research and light sources.

  11. Integrated software package for laser diodes characterization

    Science.gov (United States)

    Sporea, Dan G.; Sporea, Radu A.

    2003-10-01

    The characteristics of laser diodes (wavelength of the emitted radiation, output optical power, embedded photodiode photocurrent, threshold current, serial resistance, external quantum efficiency) are strongly influenced by their driving circumstances (forward current, case temperature). In order to handle such a complex investigation in an efficient and objective manner, the operation of several instruments (a laser diode driver, a temperature controller, a wavelength meter, a power meter, and a laser beam analyzer) is synchronously controlled by a PC, through serial and GPIB communication. For each equipment, instruments drivers were designed using the industry standards graphical programming environment - LabVIEW from National Instruments. All the developed virtual instruments operate under the supervision of a managing virtual instrument, which sets the driving parameters for each unit under test. The manager virtual instrument scans as appropriate the driving current and case temperature values for the selected laser diode. The software enables data saving in Excel compatible files. In this way, sets of curves can be produced according to the testing cycle needs.

  12. High power diode lasers for solid-state laser pumps

    Science.gov (United States)

    Linden, Kurt J.; McDonnell, Patrick N.

    1994-02-01

    The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

  13. A new diode laser acupuncture therapy apparatus

    Science.gov (United States)

    Li, Chengwei; Huang, Zhen; Li, Dongyu; Zhang, Xiaoyuan

    2006-06-01

    Since the first laser-needles acupuncture apparatus was introduced in therapy, this kind of apparatus has been well used in laser biomedicine as its non-invasive, pain- free, non-bacterium, and safetool. The laser acupuncture apparatus in this paper is based on single-chip microcomputer and associated by semiconductor laser technology. The function like traditional moxibustion including reinforcing and reducing is implemented by applying chaos method to control the duty cycle of moxibustion signal, and the traditional lifting and thrusting of acupuncture is implemented by changing power output of the diode laser. The radiator element of diode laser is made and the drive circuit is designed. And chaos mathematic model is used to produce deterministic class stochastic signal to avoid the body adaptability. This function covers the shortages of continuous irradiation or that of simple disciplinary stimulate signal, which is controlled by some simple electronic circuit and become easily adjusted by human body. The realization of reinforcing and reducing of moxibustion is technological innovation in traditional acupuncture coming true in engineering.

  14. Combustion control using an IR diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Niska, J.; Rensgard, A.; Malmberg, D. [MEFOS, Lulea (Sweden)

    2003-07-01

    Tunable diode laser absorption spectroscopy (TDLAS) is a recent development in process instrumentation. This paper describes the testing of a commercial TDLAS instrument for continuous oxygen analysis of the furnace combustion gases in an industrial reheating furnace and in a pilot furnace at MEFOS. A time-averaged oxygen concentration signal with a TDC2000 furnace controller at MEFOS was used to prove automatic control of the air-to-fuel ratio. The local measurements of the oxygen concentration using a zirconia probe in both furnaces compared well with the oxygen concentrations measured by the TDLAS instrument. The advantage of the diode laser is its high reliability for average gas concentration measurements in the path of the beam, when compared to point gas analysis with conventional zirconia instrumentation. Improved process control is derived from reliable gas analysis, which translates into energy savings, reduced emissions and improved productivity for steel reheating furnaces. 7 refs., 8 figs.

  15. Diode Laser Sensor for Scramjet Inlet

    Science.gov (United States)

    2010-05-11

    Conference’. 1.2 O’Byrne, S., Huynh, L., Wittig, S. M. and Smith, N. S. A. (2009), Non- intrusive water vapour absorp- tion measurements in a simulated...O’Byrne, L. Huynh, S. M. Wittig and N. S. A. Smith, “Non- intrusive Water Vapour Absorp- tion Measurements in a Simulated Helicopter Exhaust”, Proceedings...rather than at a surface. The measurement techniques used at these hypersonic flow conditions should also be non- intrusive . Tuneable diode laser

  16. Monolithic micro-laser with KTP ridge waveguides for injection seeding high power lasers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This NASA Small Business Innovation Research Phase I project will develop a technique to greatly improve the direct coupling of a diode laser to an optical waveguide...

  17. Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Molpeceres, C. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain)], E-mail: carlos.molpeceres@upm.es; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain); Fernandez, S.; Gandia, J.J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Villar, F.; Nos, O.; Bertomeu, J. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2009-03-15

    Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

  18. Laser welding of polymers using high-power diode lasers

    Science.gov (United States)

    Bachmann, Friedrich G.; Russek, Ulrich A.

    2003-09-01

    Laser welding of polymers using high power diode lasers offers specific process advantages over conventional technologies, such as short process times while providing optically and qualitatively valuable weld seams, contactless yielding of the joining energy, absence of process induced vibrations, imposing minimal thermal stress and avoiding particle generation. Furthermore this method exhibits high integration capabilities and automatization potential. Moreover, because of the current favorable cost development within the high power diode laser market laser welding of polymers has become more and more an industrially accepted joining method. This novel technology permits both, reliable high quality joining of mechanically and electronically highly sensitive micro components and hermetic sealing of macro components. There are different welding strategies available, which are adaptable to the current application. Within the frame of this discourse scientific and also application oriented results concerning laser transmission welding of polymers using preferably diode lasers are presented. Besides the used laser systems the fundamental process strategies as well as decisive process parameters are illustrated. The importance of optical, thermal and mechanical properties is discussed. Applications at real technical components will be presented, demonstrating the industrial implementation capability and the advantages of a novel technology.

  19. Comparison of Diode and Argon Laser Lesions in Rabbit Retina

    Institute of Scientific and Technical Information of China (English)

    Hui Zhang; Xiaoxin Li; Bin Li; Jiping Da

    2004-01-01

    Purpose: To compare the histological alteration of retina with various spot intensities between diode and argon lasers in order to instruct the clinical use of 810 nm diode laser.Methods: Transpupillary retinal photocoagulations were performed on 42 eyes of 27pigmented rabbits. Histopathologic alteration of lesions in different intensities and different time intervals after irradiation produced by diode and argon laser was observed and compared using light microscopy. Areas of various lesions measured by image analysis system (CMIAS) were compared quantitatively.Results: Histopathologically, two-week-old grade 2 lesions produced by diode laser induced the disappearance of outer nuclear cells. More than a half of all showed reduction in number of outer nuclear layer cells in argon. Fibroblasts appeared in the diode grade 3lesions 5 days after irradiation. CMIAS data showed that all the areas of diode lesions immediately after photocoagulation were to be larger than those of argon laser lesions in the same spot intensity (P < 0.05). However, twenty-four hours after photocoagulation, the area of the diode lesions increased less than that of the argon laser lesions (8%vs.23%).Conclusion: The acute histological effect caused by 810 nm diode laser and argon green laser is similar,while the expansion of lesion area 24 hours after photocoagulation was less with the diode laser compared to the argon. This may be the first report in the literature regarding quantitative analysis of the delayed reaction of argon green lasers.

  20. Laser Diode Pumped Solid State Lasers

    Science.gov (United States)

    1987-01-01

    CRYSTAL ._____ ____ &m? * Deuterated • Potassium Dihydrogen . Phosphate - ’ KD PO (KD*P) ~ .~ ,_ .i-; Deuterated Ceslum 43ssI6 1 .. r., Dihydrogen ...as a buffer layer to absorb the thermal strain differential between the diode and a copper heatsink has also been suggested in the past and a recent...Potassium Titanium d33829-3 0.16 *; . ~ Penta- Phosphate - ’(20 na) ;A.: KTiOPOi (KTP) - Barium Sodium d33 8 43 .0j 4 eNilhatsh RA.NaNhO

  1. On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

    CERN Document Server

    Deveaux, M; Dorokhov, A; Doering, D; Heymes, J; Kachel, M; Koziel, M; Linnik, B; Müntz, C; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is fo...

  2. Laboratory diode laser spectroscopy in molecular planetary astronomy

    Science.gov (United States)

    Jennings, D. E.

    1988-01-01

    Infrared spectroscopy of planetary atmospheres is performed at high spectral resolution comparable to that in the laboratory. This requires that laboratory spectroscopy use the highest resolution and the most accurate techniques. Tunable diode laser spectroscopy can supply many of the spectroscopic parameters needed by astronomers. In particular, line positions, line strengths, and collisional line widths are measured with diode lasers, and these are often among the best values available. Diode laser spectra are complimentary to lower resolution, broader-coverage Fourier transform spectra. Certain procedures must be adopted, however, when using diode lasers, for determining their output characteristics and for calibrating each spectrum against quality references.

  3. A novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Andersen, P. E.; Petersen, P.;

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...... is extracted in a high-quality beam and 80 percent of the output power is extracted through the fiber. The power transmitted through tile fiber scales linearly with the power of the laser diode. which means that a laser diode emitting 1.7 W multi-mode radiation would provide 1 W of optical power through a 50...

  4. High stable power control of a laser diode

    Institute of Scientific and Technical Information of China (English)

    YANG Jiu-ru; LI Cheng; YE Hong-an; L(U) Guo-hui; JIA Shi-lou

    2006-01-01

    In this paper,the low and the high frequency noises of a laser diode have been analyzed. Based on the analysis a novel scheme that adapts analog and digital hybrid techniques is proposed to stabilize the output power of a laser diode. With the hybrid controller,the low and the high frequency noises of a laser diode are conspicuously reduced.By accurate calculation,the short-term stability of the output power of laser diode reaches ±0.55‰, and the long-term stability is ±0.7‰.

  5. Monolithic single mode interband cascade lasers with wide wavelength tunability

    Science.gov (United States)

    von Edlinger, M.; Weih, R.; Scheuermann, J.; Nähle, L.; Fischer, M.; Koeth, J.; Kamp, M.; Höfling, S.

    2016-11-01

    Monolithic two-section interband cascade lasers offering a wide wavelength tunability in the wavelength range around 3.7 μm are presented. Stable single mode emission in several wavelength channels was realized using the concept of binary superimposed gratings and two-segment Vernier-tuning. The wavelength selective elements in the two segments were based on specially designed lateral metal grating structures defined by electron beam lithography. A dual-step dry etch process provided electrical separation between the segments. Individual current control of the segments allowed wavelength channel selection as well as continuous wavelength tuning within channels. A discontinuous tuning range extending over 158 nm in up to six discrete wavelength channels was achieved. Mode hop free wavelength tuning up to 14 nm was observed within one channel. The devices can be operated in continuous wave mode up to 30 °C with the output powers of 3.5 mW around room temperature.

  6. The Adjunctive Soft-Tissue Diode Laser in Orthodontics.

    Science.gov (United States)

    Borzabadi-Farahani, Ali

    2017-04-01

    Lasers are a relatively new addition to the orthodontist's armamentarium. This article reviews the fundamental basic science of available soft-tissue lasers, with an emphasis on diode lasers, and discusses various adjunct applications of the diode laser for soft-tissue orthodontic procedures. Diode lasers function by cutting with an initiated hot tip and produce minimal to no interaction with healthy dental hard tissue, making them suitable for soft-tissue procedures. The contact cutting mode provides enhanced bloodless site visibility and facility to perform delicate soft tissue procedures, which is important in areas with difficult access. Such adjunctive uses include laser gingivectomy to improve oral hygiene or bracket positioning, esthetic laser gingival recontouring, and laser exposure of superficially impacted teeth. Selected cases treated with a 940-nm indium-gallium-arsenide-phosphide (InGaAsP) diode laser will be presented.

  7. Characteristics of several NIR tuneable diode lasers for spectroscopic based gas sensing: A comparison

    Science.gov (United States)

    Weldon, Vincent; McInerney, David; Phelan, Richard; Lynch, Michael; Donegan, John

    2006-04-01

    Tuneable laser diodes were characterized and compared for use as tuneable sources in gas absorption spectroscopy. Specifically, the characteristics of monolithic widely tuneable single frequency lasers, such as sampled grating distributed Bragg reflector laser and modulated grating Y-branch laser diodes, recently developed for optical communications, with operating wavelengths in the 1520 nm ≤ λ ≤ 1570 nm are compared. The assessment also includes an external cavity laser and a distributed feedback laser for water vapour detection, both emitting at 935 nm. Characteristics investigated include side-mode suppression ratio, ease of tuning, tuning range, spectral emission linewidth, frequency stability and wavelength modulation. While some characteristics differ significantly across the range of lasers, each device has a number of useful intrinsic qualities for gas sensing. Specifically, the modulated grating Y laser and the sampled grating DBR laser have wide quasi-continuous tuneability (30-40 nm) and display relatively low residual amplitude noise when grating-modulated in a harmonic detection scheme. They are particularly suitable for multi-gas sensing. ECLs are also capable of wide quasi-continuous tuneability (100 nm) but their architecture renders them unsuitable for gas sensing application outside a controlled laboratory environment. DFB devices are by far the easiest with which to work but their modest tuneability (4 nm maximum by temperature) almost invariably limits their use to single gas sensing applications.

  8. Eigenpolarization theory of monolithic nonplanar ring oscillators

    Science.gov (United States)

    Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.

    1989-01-01

    Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.

  9. Electronically controlled heat sink for high-power laser diodes

    Science.gov (United States)

    Vetrovec, John

    2009-05-01

    We report on a novel electronically controlled active heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink receives diode waste heat at high flux and transfers it at reduced flux to environment, coolant fluid, heat pipe, or structure. Thermal conductance of the heat sink is electronically adjustable, allowing for precise control of diode temperature and the diode light wavelength. When pumping solid-state or alkaline vapor lasers, diode wavelength can be precisely temperature-tuned to the gain medium absorption features. This paper presents the heat sink physics, engineering design, and performance modeling.

  10. Mutual phase locking of a coupled laser diode-Gunn diode pair

    OpenAIRE

    Izadpanah, S.H; Rav-Noy, Z.; Mukai, S.; Margalit, S.; Yariv, Amnon

    1984-01-01

    Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity.

  11. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.

    1991-01-01

    InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

  12. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Deri, R J

    2011-01-03

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  13. Underwater Chaotic Lidar using Blue Laser Diodes

    Science.gov (United States)

    Rumbaugh, Luke K.

    The thesis proposes and explores an underwater lidar system architecture based on chaotic modulation of recently introduced, commercially available, low cost blue laser diodes. This approach is experimentally shown to allow accurate underwater impulse response measurements while eliminating the need for several major components typically found in high-performance underwater lidar systems. The proposed approach is to: 1. Generate wideband, noise-like intensity modulation signals using optical chaotic modulation of blue-green laser diodes, and then 2. Use this signal source to develop an underwater chaotic lidar system that uses no electrical signal generator, no electro-optic modulator, no optical frequency doubler, and no large-aperture photodetector. The outcome of this thesis is the demonstration of a new underwater lidar system architecture that could allow high resolution ranging, imaging, and water profiling measurements in turbid water, at a reduced size, weight, power and cost relative to state-of-the-art high-performance underwater lidar sensors. This work also makes contributions to the state of the art in optics, nonlinear dynamics, and underwater sensing by demonstrating for the first time: 1. Wideband noise-like intensity modulation of a blue laser diode using no electrical signal generator or electro-optic modulator. Optical chaotic modulation of a 462 nm blue InGaN laser diode by self-feedback is explored for the first time. The usefulness of the signal to chaotic lidar is evaluated in terms of bandwidth, modulation depth, and autocorrelation peak-to-sidelobe-ratio (PSLR) using both computer and laboratory experiments. In laboratory experiments, the optical feedback technique is shown to be effective in generating wideband, noise-like chaotic signals with strong modulation depth when the diode is operated in an external-cavity dominated state. The modulation signal strength is shown to be limited by the onset of lasing within the diode's internal

  14. Method for partially coating laser diode facets

    Science.gov (United States)

    Dholakia, Anil R. (Inventor)

    1990-01-01

    Bars of integral laser diode devices cleaved from a wafer are placed with their p regions abutting and n regions abutting. A thin BeCu mask having alternate openings and strips of the same width as the end facets is used to mask the n region interfaces so that multiple bars can be partially coated over their exposed p regions with a reflective or partial reflective coating. The partial coating permits identification of the emitting facet from the fully coated back facet during a later device mounting procedure.

  15. Long all-active monolithic mode-locked lasers with surface-etched bragg gratings

    OpenAIRE

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2007-01-01

    We have fabricated 4.4-mm-long monolithic InAlGaAsP–InP mode-locked lasers with integrated deeply surface etched distributed Bragg reflector (DBR) mirrors. The lasers produce 3.7-ps transform-limited Gaussian pulses with 10-mW average output power and 250-fs absolute timing jitter. The performance of the DBR lasers is compared to the performance of Fabry–PÉrot mode-locked lasers from the same wafer and to the performance of earlier reported long monolithic DBR mode-locked lasers and is found ...

  16. Long all-active monolithic mode-locked lasers with surface-etched bragg gratings

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2007-01-01

    We have fabricated 4.4-mm-long monolithic InAlGaAsP–InP mode-locked lasers with integrated deeply surface etched distributed Bragg reflector (DBR) mirrors. The lasers produce 3.7-ps transform-limited Gaussian pulses with 10-mW average output power and 250-fs absolute timing jitter. The performance...... of the DBR lasers is compared to the performance of Fabry–PÉrot mode-locked lasers from the same wafer and to the performance of earlier reported long monolithic DBR mode-locked lasers and is found to be better....

  17. Spectral control of diode lasers using external waveguide circuits

    NARCIS (Netherlands)

    Oldenbeuving, Ruud

    2013-01-01

    We investigated spectral control of diode lasers using external waveguide circuits. The purpose of this work is to investigate such external control for providing a new class of diode lasers with technologically interesting properties, such as a narrow spectral bandwidth and spectrally tunable

  18. Spectral control of diode lasers using external waveguide circuits

    NARCIS (Netherlands)

    Oldenbeuving, R.M.

    2013-01-01

    We investigated spectral control of diode lasers using external waveguide circuits. The purpose of this work is to investigate such external control for providing a new class of diode lasers with technologically interesting properties, such as a narrow spectral bandwidth and spectrally tunable outpu

  19. 1-kilowatt CW all-fiber laser oscillator pumped with wavelength-beam-combined diode stacks.

    Science.gov (United States)

    Xiao, Y; Brunet, F; Kanskar, M; Faucher, M; Wetter, A; Holehouse, N

    2012-01-30

    We have demonstrated a monolithic cladding-pumped ytterbium-doped single all-fiber laser oscillator generating 1 kW of CW signal power at 1080 nm with 71% slope efficiency and near diffraction-limited beam quality. Fiber components were highly integrated on "spliceless" passive fibers to promote laser efficiency and alleviate non-linear effects. The laser was pumped through a 7:1 pump combiner with seven 200-W 91x nm fiber-pigtailed wavelength-beam-combined diode-stack modules. The signal power of such a single all-fiber laser oscillator showed no evidence of roll-over, and the highest output was limited only by available pump power.

  20. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    Science.gov (United States)

    Dyer, Gregory C.; Nordquist, Christopher D.; Cich, Michael J.; Ribaudo, Troy; Grine, Albert D.; Fuller, Charles T.; Reno, John L.; Wanke, Michael C.

    2013-10-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  1. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    CERN Document Server

    Dyer, Gregory C; Cich, Michael J; Ribaudo, Troy; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

    2016-01-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  2. Fiber Optic Coupling of CW Linear Laser Diode Array

    Institute of Scientific and Technical Information of China (English)

    WANG Xiaowei; XIAO Jianwei; MA Xiaoyu; WANG Zhongming; FANG Gaozhan

    2002-01-01

    Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 μm diameter.The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 μm aperture spaced on 500 μm centers.The coupling system contains packaged laser diode bar,fast axis collimator,slow axis collimation array,beam transformation system and focusing system.The high brightness,high power density and single fiber output of a laser diode bar is achieved.The coupling efficiency is 65% and the power density is up to 1.03×104 W/cm2.

  3. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  4. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  5. Digital control of diode laser for atmospheric spectroscopy

    Science.gov (United States)

    Menzies, R. T.; Rutledge, C. W. (Inventor)

    1985-01-01

    A system is described for remote absorption spectroscopy of trace species using a diode laser tunable over a useful spectral region of 50 to 200 cm(-1) by control of diode laser temperature over range from 15 K to 100 K, and tunable over a smaller region of typically 0.1 to 10 cm(-1) by control of the diode laser current over a range from 0 to 2 amps. Diode laser temperature and current set points are transmitted to the instrument in digital form and stored in memory for retrieval under control of a microprocessor during measurements. The laser diode current is determined by a digital to analog converter through a field effect transistor for a high degree of ambient temperature stability, while the laser diode temperature is determined by set points entered into a digital to analog converter under control of the microprocessor. Temperature of the laser diode is sensed by a sensor diode to provide negative feedback to the temperature control circuit that responds to the temperature control digital to analog converter.

  6. Laser diode ignition characteristics of Zirconium Potassium Perchlorate (ZPP)

    Science.gov (United States)

    Callaghan, Jerry D.; Tindol, Scot

    1993-01-01

    Hi-Shear Technology, Corp., (HSTC) has designed and built a Laser equivalent NASA Standard Initiator (LNSI). Langlie tests with a laser diode output initiating ZPP were conducted as a part of this effort. The test parameters include time to first pressure, laser power density requirements, and ignition time. The data from these laser tests on ZPP are presented.

  7. Computer-Assisted Experiments with a Laser Diode

    Science.gov (United States)

    Kraftmakher, Yaakov

    2011-01-01

    A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The "h/e" ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a…

  8. Laser lipolysis with a 980 nm diode laser.

    Science.gov (United States)

    Forman Taub, Amy; Friedman, Adam

    2010-05-01

    Laser lipolysis is recognized as an effective, non-surgical solution for fat removal and body reshaping. Its appeal lay in the procedure's ability to treat localized fat deposits and correct body asymmetries with apparent decreased risk compared to traditional liposuction. The energy emitted by the laser uses volumetric heating to destroy fat cells, contract skin and stimulate collagenesis. Although devices of five different wavelengths are FDA approved for lipolysis, it has been found that the 980 nm diode laser is consistently successful in inducing the required fat-heat and skin-heat interactions necessary for optimal results. Although laser lipolysis is not intended to replace traditional liposuction, it offers patients a procedure that yields similar benefits with fewer complications and faster recovery.

  9. Design of drive circuit of laser diode

    Science.gov (United States)

    Ran, Yingying; Huang, Xuegong; Xu, Xiaobin

    2016-10-01

    Aiming at the difficult problem of high precision frequency stabilization of semiconductor laser diode, the laser frequency control is realized through the design of the semiconductor drive system. Above all, the relationship between the emission frequency and the temperature of LD is derived theoretically. Then the temperature corresponding to the stable frequency is obtained. According to the desired temperature stability of LD, temperature control system is designed, which is composed of a temperature setting circuit, temperature gathering circuit, the temperature display circuit, analog PID control circuit and a semiconductor refrigerator control circuit module. By sampling technology, voltage of platinum resistance is acquired, and the converted temperature is display on liquid crystal display. PID analog control circuit controls speed stability and precision of temperature control. The constant current source circuit is designed to provide the reference voltage by a voltage stabilizing chip, which is buffered by an operational amplifier. It is connected with the MOSFET to drive the semiconductor laser to provide stable current for the semiconductor laser. PCB circuit board was finished and the experimental was justified. The experimental results show that: the design of the temperature control system could achieve the goal of temperature monitoring. Meanwhile, temperature can be stabilized at 40°C +/- 0.1°C. The output voltage of the constant current source is 2 V. The current is 35 mA.

  10. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin

    2004-01-01

    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  11. An Innovative Gas Sensor with On-Chip Reference Using Monolithic Twin Laser

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong-Gang; TIAN Zhao-Bing; ZHANG Xiao-Jun; GU Yi; LI Ai-Zhen; ZHU Xiang-Rong; ZHENG Yan-Lan; LIU Sheng

    2007-01-01

    An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 μm antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below 1 ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.

  12. Monolithic thermally bonded Er3+, Yb3+:glass/Co2+:MgAl2O4 microchip lasers

    Science.gov (United States)

    Mlynczak, Jaroslaw; Belghachem, Nabil

    2015-12-01

    The highest ever reported 10 kW peak power in monolithic thermally bonded Er3+, Yb3+:glass/Co2+:MgAl2O4 microchip laser was achieved. To show the superiority of monolithic microchip lasers over those with external mirrors the laser generation characteristics of the same samples in both cases were compared.

  13. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  14. Respiratory complications after diode-laser-assisted tonsillotomy.

    Science.gov (United States)

    Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

    2014-08-01

    Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

  15. Dual-wavelength Y-branch distributed Bragg reflector diode laser at 785 nanometers for shifted excitation Raman difference spectroscopy.

    Science.gov (United States)

    Maiwald, Martin; Eppich, Bernd; Fricke, Jörg; Ginolas, Arnim; Bugge, Frank; Sumpf, Bernd; Erbert, Götz; Tränkle, Günther

    2014-01-01

    A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The monolithic device was realized with deeply etched surface DBR gratings using one-step epitaxy. An optical output power of 140 mW was obtained in continuous-wave (CW) operation for each laser cavity, with emission wavelengths of the device at 784.50 and 785.12 nm. A spectral width of the laser emission of 30 pm (0.5 cm(-1)), including 95% of optical power, was measured. The mean spectral distance of both excitation lines is 0.63 nm (10.2 cm(-1)) over the whole operating range. Raman experiments using polystyrene as the test sample and ambient light as the interference source were carried out and demonstrate the suitability of the dual-wavelength diode laser for SERDS.

  16. Rational Chebyshev Spectral Transform for the dynamics of high-power laser diodes

    CERN Document Server

    Javaloyes, J

    2014-01-01

    This manuscript details the use of the rational Chebyshev transform for describing the transverse dynamics of high-power laser diodes, either broad area lasers, index guided lasers or monolithic master oscillator power amplifier devices. This spectral method can be used in combination with the delay algebraic equation approach developed in \\cite{JB-OE-12}, which allows to substantially reduce the computation time. The theory is presented in such a way that it encompasses the case of the Fourier spectral transform presented in \\cite{PJB-JSTQE-13} as a particular case. It is also extended to the consideration of index guiding with an arbitrary profile. Because their domain of definition is infinite, the convergence properties of the Chebyshev Rational functions allow handling the boundary conditions with higher accuracy than with the previously studied Fourier method. As practical examples, we solve the beam propagation problem with and without index guiding: we obtain excellent results and an improvement of th...

  17. Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

    Science.gov (United States)

    2012-09-01

    House Appropriations hearing on May 20th, 2010 where Robert Gates, then U.S. Secretary of Defense, said the following in answer to a question from Rep...Henry, B. P. Wert, T. Gilpin , and J. R. Drummond. “Tunable diode laser absorption spectrometer for ground-based measurements of formaldehyde”. Journal...spectroscopy (TDLAS) at 1.37 µm”. Applied Physics B: Lasers and Optics, 92(3):393–401, 2008. 43. Kormann, Robert , Horst Fischer, and Frank G. Wienhold

  18. Active Stabilization of a Diode Laser Injection Lock

    CERN Document Server

    Saxberg, Brendan; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  19. Active stabilization of a diode laser injection lock

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  20. High power collimated diode laser stack

    Institute of Scientific and Technical Information of China (English)

    LIU Yuan-yuan; FANG Gao-zhan; MA Xiao-yu; LIU Su-ping; FENG Xiao-ming

    2006-01-01

    A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques.The module includes ten typical continuous wave (cw) bars and the total output power can be up to 368W at 48.6A.Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0.926 40 and 8.2060 respectively.The light emitting area is limited in a square area of 18.3 mm×11 mm.The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.

  1. Diode laser sensor for process control and environmental monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Zaatar, Y.; Bechara, J.; Khoury, A.; Zaouk, D. [Lebanese Univ., Physics Dept., Fanar (Lebanon); Charles, J.-P. [Metz Univ., L.I.C.M., Metz, 57 (France)

    2000-04-01

    Absorption spectroscopy with tunable diode lasers (TDLAS) in the infrared region is a well-known technique for the chemical analysis of gas mixtures. The laser provides a high selectivity, which is important in industrial environments such as in-line stack monitoring, where complex gas mixtures are present. A wavelength tunable diode laser in the near infrared region has been utilised as a light source in absorption measurements of air pollution resulting from energy usage for industry. The emission frequency can be varied over a relatively wide spectral range by changing the current and temperature of the diode. (Author)

  2. Frequency Comb Assisted Broadband Precision Spectroscopy with Cascaded Diode Lasers

    CERN Document Server

    Liu, Junqiu; Pfeiffer, Martin H P; Kordts, Arne; Kamel, Ayman N; Guo, Hairun; Geiselmann, Michael; Kippenberg, Tobias J

    2016-01-01

    Frequency comb assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this letter we present a novel method using cascaded frequency agile diode lasers, which allows extending the measurement bandwidth to 37.4 THz (1355 to 1630 nm) at MHz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy and in particular it enables to characterize the dispersion of integrated microresonators up to the fourth order.

  3. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser

    Science.gov (United States)

    Cheng, YuanBing; Pan, JiaoQing; Zhou, Fan; Wang, BaoJun; Zhu, Hongliang; Zhao, Lingjuan; Wang, Wei

    2007-11-01

    High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250 μm DFB and 170 μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

  4. Monolithic white light emitting diodes using a (Ga,In)N-based light converter

    Science.gov (United States)

    Damilano, Benjamin; Lekhal, Kaddour; Kim-Chauveau, Hyonju; Hussain, Sakhawat; Frayssinet, Eric; Brault, Julien; Chenot, Sébastien; Vennéguès, Philippe; De Mierry, Philippe; Massies, Jean

    2014-03-01

    Commercially available inorganic white light emitting diodes (LEDs) are essentially based on the combination of a blue InGaN based LED chip covered by a long wavelength emitting (yellow, red) phosphor. We propose to avoid this step of phosphor deposition by taking advantage of the fact that yellow to red emission can be achieved using InGaN alloys. By stacking an InGaN/GaN multiple quantum well (QW) emitting in the yellow, acting as a light converter, and a short wavelength blue-violet pump LED grown on top, white light emission can be obtained. Furthermore, if we extend the emission spectrum of the light converter into the red, a warm white light color is demonstrated when a pump LED is grown on top. However, the high In content InGaN QWs of the light converter have a low thermal stability and the QW efficiency tends to degrade during the growth of the pump LED. Three different solutions are explored to avoid the thermal degradation of the light converter. The monolithic LED structures were grown by molecular beam epitaxy (MBE), by a combination of both MBE and metal-organic chemical vapor phase epitaxy (MOCVD), or by a low temperature full-MOCVD process. The best results are obtained using a complete MOCVD growth process. The structure and the MOCVD growth conditions are specifically adapted in order to avoid the thermal degradation of the large In composition InGaN QWs emitting at long wavelength during the growth of the subsequent layers.

  5. Applications of microlens-conditioned laser diode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Beach, R.J.; Emanuel, M.A.; Freitas, B.L. [and others

    1995-01-01

    The ability to condition the radiance of laser diodes using shaped-fiber cylindrical-microlens technology has dramatically increased the number of applications that can be practically engaged by diode laser arrays. Lawrence Livermore National Laboratory (LLNL) has actively pursued optical efficiency and engineering improvements in this technology in an effort to supply large radiance-conditioned laser diode array sources for its own internal programs. This effort has centered on the development of a modular integrated laser diode packaging technology with the goal of enabling the simple and flexible construction of high average power, high density, two-dimensional arrays with integrated cylindrical microlenses. Within LLNL, the principal applications of microlens-conditioned laser diode arrays are as high intensity pump sources for diode pumped solid state lasers (DPSSLs). A simple end-pumping architecture has been developed and demonstrated that allows the radiation from microlens-conditioned, two-dimensional diode array apertures to be efficiently delivered to the end of rod lasers. To date, pump powers as high as 2.5 kW have been delivered to 3 mm diameter laser rods. Such high power levels are critical for pumping solid state lasers in which the terminal laser level is a Stark level lying in the ground state manifold. Previously, such systems have often required operation of the solid state gain medium at low temperature to freeze out the terminal laser Stark level population. The authors recently developed high intensity pump sources overcome this difficulty by effectively pumping to much higher inversion levels, allowing efficient operation at or near room temperature. Because the end-pumping technology is scalable in absolute power, the number of rare-earth ions and transitions that can be effectively accessed for use in practical DPSSL systems has grown tremendously.

  6. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  7. Diode laser absorption spectroscopy of lithium isotopes

    Science.gov (United States)

    Olivares, Ignacio E.; González, Iván A.

    2016-10-01

    We study Doppler-limited laser intensity absorption, in a thermal lithium vapor containing 7Li and 6Li atoms in a 9 to 1 ratio, using a narrow-linewidth single-longitudinal-mode tunable external cavity diode laser at the wavelength of 670.8 nm. The lithium vapor was embedded in helium or argon buffer gas. The spectral lineshapes were rigorously predicted for D_1 and D_2 for the lithium 6 and 7 isotope lines using reduced optical Bloch equations, specifically derived, from a density matrix analysis. Here, a detailed comparison is provided of the predicted lineshapes with the measured 7Li-D_2, 7Li-D_1, 6Li-D_2 and 6Li-D_1 lines, in the case of high vapor density and with intensity above the saturation intensity. To our knowledge, this is the first time that such detailed comparison is reported in the open literature. The calculations were also extended to saturated absorption spectra and compared to measured Doppler-free 7Li-D_2 and 6Li-D_2 hyperfine lines.

  8. Pulse-Width Jitter Measurement for Laser Diode Pulses

    Institute of Scientific and Technical Information of China (English)

    TANG Jun-Hua; WANG Yun-Cai

    2006-01-01

    @@ Theoretical analysis and experimental measurement of pulse-width jitter of diode laser pulses are presented. The expression of pulse power spectra with all amplitude jitter, timing jitter and pulse-width jitter is deduced.

  9. Unmanned Aerial Vehicle Diode Laser Sensor for Methane Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A compact, lightweight, and low power diode laser sensor will be developed for atmospheric methane detection on small unmanned aerial vehicles (UAVs). The physical...

  10. Monolithically integrated optoelectronic down-converter (MIOD)

    Science.gov (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  11. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications. Final report, 6 August 1987-9 June 1989

    Energy Technology Data Exchange (ETDEWEB)

    Palfrey, S.L.; Enstrom, R.E.; Longeway, P.A.

    1989-09-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  12. Ablation of dentin by irradiation of violet diode laser

    Science.gov (United States)

    Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

    2006-02-01

    Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

  13. Efficient potassium diode pumped alkali laser operating in pulsed mode.

    Science.gov (United States)

    Zhdanov, Boris V; Rotondaro, Matthew D; Shaffer, Michael K; Knize, Randall J

    2014-07-14

    This paper presents the results of our experiments on the development of an efficient hydrocarbon free diode pumped alkali laser based on potassium vapor buffered by He gas at 600 Torr. A slope efficiency of more than 50% was demonstrated with a total optical conversion efficiency of 30%. This result was achieved by using a narrowband diode laser stack as the pump source. The stack was operated in pulsed mode to avoid limiting thermal effects and ionization.

  14. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  15. Wavelength stabilized multi-kW diode laser systems

    Science.gov (United States)

    Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

    2015-03-01

    We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

  16. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  17. Spectral beam combining of diode lasers with high efficiency

    DEFF Research Database (Denmark)

    Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin;

    2012-01-01

    Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation.......Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation....

  18. Management of gingival hyperpigmentation by semiconductor diode laser.

    Science.gov (United States)

    Gupta, Geeti

    2011-09-01

    Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile). Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO(2) laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  19. Combless broadband terahertz generation with conventional laser diodes.

    Science.gov (United States)

    Molter, D; Wagner, A; Weber, S; Jonuscheit, J; Beigang, R

    2011-03-14

    We present a novel technique to generate a continuous, combless broadband Terahertz spectrum with conventional low-cost laser diodes. A standard time-domain spectroscopy system using photoconductive antennas is pumped by the output of two tunable diode lasers. Using fine tuning for one laser and fine and coarse tuning for the second laser, difference frequency generation results in a continuous broadband THz spectrum. Fast coarse-tuning is achieved by a simple spatial light modulator introduced in an external cavity. The results are compared to multi-mode operation for THz generation.

  20. Laser frequency stabilisation via quasi-monolithic, unequal arm-length Mach-Zehnder interferometer with balanced DC readout

    CERN Document Server

    Gerberding, Oliver; Mehmet, Moritz; Danzmann, Karsten; Heinzel, Gerhard

    2016-01-01

    Low frequency high precision laser interferometry is subject to excess laser frequency noise coupling via arm-length differences which is commonly mitigated by locking the frequency to a stable reference system. This is crucial to achieve picometer level sensitivities in the 0.1 mHz to 1 Hz regime, where laser frequency noise is usually high and couples into the measurement phase via arm-length mismatches in the interferometers. Here we describe the results achieved by frequency stabilising an external cavity diode laser to a quasi-monolithic unequal arm-length Mach-Zehnder interferometer read out at mid-fringe via balanced detection. This stabilisation scheme has been found to be an elegant solution combining a minimal number of optical components, no additional laser modulations and relatively low frequency noise levels. The Mach-Zehnder interferometer has been designed and constructed to minimise the influence of thermal couplings and to reduce undesired stray light using the optical simulation tool IfoCAD...

  1. Diode-pumped Alexandrite ring laser for lidar applications

    Science.gov (United States)

    Munk, A.; Jungbluth, B.; Strotkamp, M.; Hoffmann, H.-D.; Poprawe, R.; Höffner, J.

    2016-03-01

    We present design and performance data of a diode-pumped Q-switched Alexandrite ring laser in the millijoule regime, which is longitudinally pumped by laser diode bar modules in the red spectral range. As a first step, a linear resonator was designed and characterized in qcw operation as well as in Q-switched operation. Based on these investigations, two separate linear cavities were set up, each with one Alexandrite crystal longitudinally pumped by one diode module. The two cavities are fused together and form a ring cavity which yields up to 6 mJ pulse burst energy in the qcw regime at 770 nm.

  2. High-repetition-rate quasi-CW side-pumped mJ eye-safe laser with a monolithic KTP crystal for intracavity optical parametric oscillator.

    Science.gov (United States)

    Cho, C Y; Chen, Y C; Huang, Y P; Huang, Y J; Su, K W; Chen, Y F

    2014-04-01

    We demonstrate a high-repetition-rate millijoule passively Q-switched eye-safe Nd:YVO(4) laser pumped by a quasi-CW diode stack. A theoretical analysis has been explored for the design criteria of generating TEM(n,0) mode in the diode-stack directly side-pumping configuration. We successfully generate TEM(n,0) modes at 1064 nm by adjusting the gain medium with respected to the laser axis. We further observe the spatial cleaning ability for generating an nearly TEM(0,0) mode output at 1573 nm with a monolithic OPO cavity. At the repetition rate up to 200 Hz, the output pulse energy reaches 1.21 mJ with the threshold pump energy of 17.9 mJ.

  3. Spectral narrowing of a 980 nm tapered diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Gaëlle

    2011-01-01

    High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope...... in wavelength specific applications and hence, it is vital to stabilize the emission spectrum of these devices. In our experiment, we describe the wavelength narrowing of a 12 element 980 nm tapered diode laser bar using a simple Littman configuration. The tapered laser bar which suffered from a big smile has...... been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order...

  4. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  5. Reliability of high power laser diodes with external optical feedback

    Science.gov (United States)

    Bonsendorf, Dennis; Schneider, Stephan; Meinschien, Jens; Tomm, Jens W.

    2016-03-01

    Direct diode laser systems gain importance in the fields of material processing and solid-state laser pumping. With increased output power, also the influence of strong optical feedback has to be considered. Uncontrolled optical feedback is known for its spectral and power fluctuation effects, as well as potential emitter damage. We found that even intended feedback by use of volume Bragg gratings (VBG) for spectral stabilization may result in emitter lifetime reduction. To provide stable and reliable laser systems design, guidelines and maximum feedback ratings have to be found. We present a model to estimate the optical feedback power coupled back into the laser diode waveguide. It includes several origins of optical feedback and wide range of optical elements. The failure thresholds of InGaAs and AlGaAs bars have been determined not only at standard operation mode but at various working points. The influence of several feedback levels to laser diode lifetime is investigated up to 4000h. The analysis of the semiconductor itself leads to a better understanding of the degradation process by defect spread. Facet microscopy, LBIC- and electroluminescence measurements deliver detailed information about semiconductor defects before and after aging tests. Laser diode protection systems can monitor optical feedback. With this improved understanding, the emergency shutdown threshold can be set low enough to ensure laser diode reliability but also high enough to provide better machine usability avoiding false alarms.

  6. Future Solid State Lighting using LEDs and Diode Lasers

    DEFF Research Database (Denmark)

    Petersen, Paul Michael

    2014-01-01

    significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...... diodes (LEDs). Blue emitting 445-460 nm LED chips with conversion in phosphorescent materials have undergone tremendous development in the last decade with ultra high efficiencies. However, the technology suffers from a decrease in efficiency at high input current densities, known as the “efficiency...... and non-radiative recombination could be the origins. Recently, Auger recombination was proposed as the dominant mechanism for efficiency droop. In the talk we discuss the mechanisms of the efficiency droop in LEDs and we show how this problem can be eliminated in laser diodes. With the introduction...

  7. Effects of the Facet Reflectivity of a Laser Diode on Fiber Bragg Grating Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    Honggang; Yu; Chang-Qing; Xu; Na; Li; Zhilin; Peng; Jacek; Wojcik; Peter; Mascher

    2003-01-01

    Effects of facet reflectivity of a laser diode on the performance of fiber Bragg grating semiconductor lasers are studied experimentally. Facet reflectivity of less than 10-4 is necessary to obtain stable oscillation wavelength.

  8. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  9. Dichroic mirror for diode pumped YAG:Nd-laser

    DEFF Research Database (Denmark)

    Dinca, Andreea; Skettrup, Torben; Lupei, V.

    1996-01-01

    The paper describes the design and realization of a dichroic mirror for a diode pumped YAG:Nd laser. The mirror is deposed on an optical glass substrate and works in optical contact with the laser crystal. The design was performed by admittance matching of the basic stack with the adjacent media...

  10. Diode-pumped laser with improved pumping system

    Science.gov (United States)

    Chang, Jim J.

    2004-03-09

    A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

  11. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  12. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  13. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heatin

  14. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  15. Computer Processing Of Tunable-Diode-Laser Spectra

    Science.gov (United States)

    May, Randy D.

    1991-01-01

    Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

  16. Photoporation and cell transfection using a violet diode laser

    Science.gov (United States)

    Paterson, L.; Agate, B.; Comrie, M.; Ferguson, R.; Lake, T. K.; Morris, J. E.; Carruthers, A. E.; Brown, C. T. A.; Sibbett, W.; Bryant, P. E.; Gunn-Moore, F.; Riches, A. C.; Dholakia, Kishan

    2005-01-01

    The introduction and subsequent expression of foreign DNA inside living mammalian cells (transfection) is achieved by photoporation with a violet diode laser. We direct a compact 405 nm laser diode source into an inverted optical microscope configuration and expose cells to 0.3 mW for 40 ms. The localized optical power density of ~1200 MW/m2 is six orders of magnitude lower than that used in femtosecond photoporation (~104 TW/m2). The beam perforates the cell plasma membrane to allow uptake of plasmid DNA containing an antibiotic resistant gene as well as the green fluorescent protein (GFP) gene. Successfully transfected cells then expand into clonal groups which are used to create stable cell lines. The use of the violet diode laser offers a new and simple poration technique compatible with standard microscopes and is the simplest method of laser-assisted cell poration reported to date.

  17. A Direct Diode Laser System Using a Planar Lightwave Circuit

    Science.gov (United States)

    Hasegawa, Kazuo; Matsubara, Hiroyuki; Ichikawa, Tadashi; Maeda, Mitsutoshi; Ito, Hiroshi

    2008-08-01

    In this paper we propose a direct diode laser (DDL) system consisting of laser diode (LD) bars, a planar lightwave circuit (PLC), and an optical fiber. We have developed a PLC as an optical power combiner and an LD mounting technology that is suitable for coupling to the PLC. A DDL system is presented that consists of six LD-PLC optical modules for the laser-welding of highly heat-resistant plastics. The total output power is in the 200 W class, with a spot diameter of 5.52 mm for the major axis and 5.00 mm for the minor axis at a focal length of 50 mm. The total output efficiency is 60.9% from the laser diode to the welding torch.

  18. Monolithic Multi-Colour 40 GHz Mode-Locked Laser Array

    OpenAIRE

    Hou, Lianping; Eddie, Iain; Marsh, John

    2016-01-01

    The monolithic integration of four 40 GHz multi-colored mode-locked lasers with a 4×1 MMI, four electroabsorption modulators and an SOA has been demonstrated. The shortest pulse widths are between 2.63 and 2.85 ps.

  19. Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

    Science.gov (United States)

    Wang, Yang; Pan, Jiao-Qing; Zhao, Ling-Juan; Zhu, Hong-Liang; Wang, Wei

    2010-12-01

    Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

  20. A monolithic relativistic electron beam source based on a dielectric laser accelerator structure

    Energy Technology Data Exchange (ETDEWEB)

    McNeur, Josh; Carranza, Nestor; Travish, Gil; Yin Hairong; Yoder, Rodney [UCLA Dept. of Physics and Astronomy, Los Angeles, CA 90095 (United States); College of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); Manhattanville College, Physics Dept., 2900 Purchase St., Purchase, NY 10577 (United States)

    2012-12-21

    Work towards a monolithic device capable of producing relativistic particle beams within a cubic-centimeter is detailed. We will discuss the Micro-Accelerator Platform (MAP), an optical laser powered dielectric accelerator as the main building block of this chip-scale source along with a field enhanced emitter and a region for sub-relativistic acceleration.

  1. Qualification of diode foil materials for excimer lasers

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, R.G.; Shurter, R.P.; Rose, E.A.

    1989-01-01

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor. 6 refs., 6 figs., 1 tab.

  2. Qualification of diode foil materials for excimer lasers

    Science.gov (United States)

    Anderson, R. G.; Shurter, R. P.; Rose, E. A.

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor.

  3. Violet Laser Diode Enables Lighting Communication.

    Science.gov (United States)

    Chi, Yu-Chieh; Huang, Yu-Fang; Wu, Tsai-Chen; Tsai, Cheng-Ting; Chen, Li-Yin; Kuo, Hao-Chung; Lin, Gong-Ru

    2017-09-05

    Violet laser diode (VLD) based white-light source with high color rendering index (CRI) for lighting communication is implemented by covering with Y3Al5O12:Ce(3+) (YAG:Ce) or Lu3Al5O12:Ce(3+)/CaAlSiN3:Eu(2+) (LuAG:Ce/CASN:Eu) phosphorous diffuser plates. After passing the beam of VLD biased at 70 mA (~2I th ) through the YAG:Ce phosphorous diffuser, a daylight with a correlated color temperature (CCT) of 5068 K and a CRI of 65 is acquired to provide a forward error correction (FEC) certified data rate of 4.4 Gbit/s. By using the VLD biased at 122 mA (~3.5I th ) to excite the LuAG:Ce/CASN:Eu phosphorous diffuser with 0.85-mm thickness, a warm white-light source with a CCT of 2700 K and a CRI of 87.9 is obtained at a cost of decreasing transmission capacity to 2.4 Gbit/s. Thinning the phosphor thickness to 0.75 mm effectively reduces the required bias current by 32 mA to achieve the same CCT for the delivered white light, which offers an enlarged CRI of 89.1 and an increased data rate of 4.4 Gbit/s. Further enlarging the bias current to 105 mA remains the white-light transmission capacity at 4.4 Gbit/s but reveals an increased CCT of 3023 K and an upgraded CRI of 91.5.

  4. A simplified 461-nm laser system using blue laser diodes and a hollow cathode lamp for laser cooling of Sr

    CERN Document Server

    Shimada, Yosuke; Ohtsubo, Nozomi; Aoki, Takatoshi; Torii, Yoshio

    2013-01-01

    We develop a simplified light source at 461 nm for laser cooling of Sr without frequency-doubling crystals but with blue laser diodes. An anti-reflection coated blue laser diode in an external cavity (Littrow) configuration provides an output power of 40 mW at 461 nm. Another blue laser diode is used to amplify the laser power up to 110 mW by injection locking. For frequency stabilization, we demonstrate modulation-free polarization spectroscopy of Sr in a hollow cathode lamp. The simplification of the laser system achieved in this work is of great importance for the construction of transportable optical lattice clocks.

  5. A simplified 461-nm laser system using blue laser diodes and a hollow cathode lamp for laser cooling of Sr.

    Science.gov (United States)

    Shimada, Yosuke; Chida, Yuko; Ohtsubo, Nozomi; Aoki, Takatoshi; Takeuchi, Makoto; Kuga, Takahiro; Torii, Yoshio

    2013-06-01

    We develop a simplified light source at 461 nm for laser cooling of Sr without frequency-doubling crystals but with blue laser diodes. An anti-reflection coated blue laser diode in an external cavity (Littrow) configuration provides an output power of 40 mW at 461 nm. Another blue laser diode is used to amplify the laser power up to 110 mW by injection locking. For frequency stabilization, we demonstrate modulation-free polarization spectroscopy of Sr in a hollow cathode lamp. The simplification of the laser system achieved in this work is of great importance for the construction of transportable optical lattice clocks.

  6. Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

    Indian Academy of Sciences (India)

    Pranab K Mukhopadhyay; K Ranganathan; Jogy George; S K Sharma; T P S Nathan

    2002-04-01

    The dependence of the beam propagation factor (2 parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the 2 parameter is related to the absorbed pump power through two parameters ( and ) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of 2 parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd3+ - doped GdVO4 crystal and the values of and parameters were estimated from the experimentally measured data points.

  7. Tapered Diode-pumped continuous-wave alexandrite laser

    OpenAIRE

    2013-01-01

    Tapered diode-pumped continuous-wave alexandrite laser Ersen Beyatli,1 Ilyes Baali,2 Bernd Sumpf,3 Götz Erbert,3 Alfred Leitenstorfer,4 Alphan Sennaroglu,1 and Umit Demirbas2,4,* 1Laser Research Laboratory, Departments of Physics and Electrical-Electronics Engineering, Koç University, Rumelifeneri, Sariyer, Istanbul 34450, Turkey 2Laser Technology Laboratory, Department of Electrical and Electronics Engineering, Antalya International University, 07190 Dosemealti, Antalya,...

  8. Diode-pumped 1123-nm Nd:YAG laser

    Institute of Scientific and Technical Information of China (English)

    Xiaoping Guo(郭晓萍); Meng Chen(陈檬); Gang Li(李港); Bingyuan zhang(张炳元); Jiandong Yang(杨建东); Zhigang Zhang(张志刚); Yonggang Wang(王勇刚)

    2004-01-01

    We demonstrated a diode-pumped Nd:YAG laser with a plano-concave resonator. When the pump power is 1.57 W, the output power of 1123-nm laser is 132 mW at the temperature of 20 ℃, and the power change is less than 2% in an hour. A periodically poled LiNbOa (PPLN) was used as outer cavity frequency-doubling crystal and 561-nm laser was observed.

  9. Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser.

    Science.gov (United States)

    Bain, F M; Lagatsky, A A; Kurilchick, S V; Kisel, V E; Guretsky, S A; Luginets, A M; Kalanda, N A; Kolesova, I M; Kuleshov, N V; Sibbett, W; Brown, C T A

    2009-02-02

    A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148 mW and thresholds as low as 40 mW were demonstrated during continuous-wave operation. Pulses of 170 ns duration with maximum pulse energy of 44 nJ at a 722 kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror.

  10. Optimized high-power diode laser, laser arrays, and bars for pump applications

    Science.gov (United States)

    Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Wolf, J.; Hennig, P.

    2009-02-01

    Broad area diode laser and diode laser bars are the most efficient light sources. In comparison to solid state laser or gas laser systems the over all beam quality of the diode laser is poor. Thus most application of diode laser bars is high efficient pumping of solid state lasers converting the beam quality and scaling the power of laser systems within the kW range. The pump efficiency and the beam coupling efficiency of the diode laser pumped systems has to be increased to meet the increasing laser market demands for reduced costs. JENOPTIK Diode Lab GmbH (JDL) has optimized their high power brilliance bars to enable reliable high power operation especially, for the 9xx nm wavelength range and low far field divergences. Superior reliability with long operation time of 13,000 hours and high power operation of 200 W are demonstrated for high power bars high filling factor mounted on passively cooled heat sinks. Smaller far field divergence at high power levels requires longer cavity length and higher efficiencies in the beam coupling needs requires lower filling factors. The new high brilliance bars and arrays with 20% filling factor are showing high power operation up to 95 W and a slow axis beam divergence of less than 8° (95% power content).

  11. A Directly-Written Monolithic Waveguide-Laser Incorporating a DFB Waveguide-Bragg Grating

    CERN Document Server

    Marshall, Graham D; Ams, Martin; Piper, James A; Withford, Michael J

    2008-01-01

    We report the fabrication and performance of the first C-band directly-written monolithic waveguide-laser. The waveguide-laser device was created in an Erbium and Ytterbium doped phosphate glass host and consisted of an optical waveguide that included a distributed feedback Bragg grating structure. The femtosecond laser direct-write technique was used to create both the waveguide and the waveguide-Bragg grating simultaneously and in a single processing step. The waveguide-laser was optically pumped at approximately 980 nm and lased at 1537nm with a bandwidth of less than 4 pm.

  12. Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step

    OpenAIRE

    Hofstetter, Daniel; Zappe, H. P.; Epler, J. E.; van Riel, P

    2008-01-01

    The monolithic integration of a GaAs-AlGaAs distributed Bragg reflector (DBR) laser with a nonabsorbing grating section, a transparent waveguide, and an absorbing photodetector is reported. Transparent and absorbing segments were defined after growth by vacancy-enhanced quantum-well disordering (VED). Laser output power was 5 mW with a threshold current of 22 mA. Detector current was linearly dependent on the laser output power and the emission from the grating side of the laser could be dire...

  13. High brightness laser source based on polarization coupling of two diode lasers with asymmetric feedback

    DEFF Research Database (Denmark)

    Thestrup, B.; Chi, M.; Sass, B.

    2003-01-01

    In this letter, we show that polarization coupling and asymmetric diode-laser feedback can be used to combine two diode-laser beams with low spatial coherence into a single beam with high spatial coherence. The coupled laser source is based on two similar laser systems each consisting of a 1 mumx......200 mum broad area laser diode applied with a specially designed feedback circuit. When operating at two times threshold, 50% of the freely running system output power is obtained in a single beam with an M-2 beam quality factor of 1.6+/-0.1, whereas the M-2 values of the two freely running diode...... lasers are 29+/-1 and 34+/-1, respectively. (C) 2003 American Institute of Physics....

  14. Experimental study of the diode pumped alkali laser (DPAL)

    Science.gov (United States)

    Endo, Masamori; Nagaoka, Ryuji; Nagaoka, Hiroki; Nagai, Toru; Wani, Fumio

    2014-02-01

    A small-scale cesium diode-pumped alkali laser (DPAL) apparatus has been developed for fundamental researches. A commercial laser diode with volume Bragg grating outcoupler is used to pump the gain cell longitudinally. Both windows of the gain cell are set at Brewster's angle for minimum loss and maximum durability. Output coupling coefficient is continuously variable from 13% to 85% by the slanted quartz plate outcoupler inserted in the optical resonator. Small signal gain is measured with a laser diode probe at various gain cell temperatures. A 6.5 W continuouswave output with 56% optical-to-optical conversion efficiency (based on the absorbed power) has been achieved. A numerical simulation code is developed and its calculation results are in good agreement with the experiments.

  15. Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution,

  16. Role of diode lasers in oro-facial pain management.

    Science.gov (United States)

    Javed, F; Kellesarian, S V; Romanos, G E

    2017-01-01

    With the increasing use of low level laser therapy (LLLT) in clinical dentistry, the aim of the present study was to assess the effectiveness of diode lasers in the management of orofacial pain. Indexed databases were searched without language and time restrictions up to and including July 2016 using different combinations of the following key words: oral, low level laser therapy, dental, pain, diode lasers, discomfort and analgesia. From the literature reviewed it is evident that LLLT is effective compared to traditional procedures in the management of oro-facial pain associated to soft tissue and hard tissue conditions such as premalignant lesions, gingival conditions and dental extractions. However, it remains to be determined which particular wavelength will produce the more favorable and predictable outcome in terms of pain reduction. It is highly recommended that further randomized control trials with well-defined control groups should be performed to determine the precise wavelengths of the diode lasers for the management of oro-facial pain. Within the limits of the present review, it is concluded that diode lasers therapy is more effective in the management of oro-facial pain compared to traditional procedures.

  17. Stimulated Brillouin Scattering Suppression in Fiber Amplifiers via Chirped Diode Lasers

    Science.gov (United States)

    2011-09-01

    1.55-µm diode laser at 1014 Hz/s using a phase-locked loop and a fiber -optic Michelson interferometer (9). The chirp has now been extended to 5×1015...diode lasers. By incorporating a fiber interferometer , the technique has been extended to chirp a (single) laser diode at 1015 Hz/s in an extremely...Stimulated Brillouin Scattering Suppression in Fiber Amplifiers via Chirped Diode Lasers by Jeffrey O. White, George Rakuljic, and Carl E

  18. Tunable C- and L-band laser source based on colorless laser diode

    Science.gov (United States)

    Peng, P. C.; Jhang, J. J.; Peng, Y. W.; Bitew, M. A.; Chi, Y. C.; Wu, W. C.; Wang, H. Y.; Lin, G. R.; Li, C. Y.; Lu, H. H.

    2017-03-01

    In this letter, we propose and demonstrate a tunable laser source which covers C- and L-bands based on a colorless laser diode. The proposed laser source is tunable widely and it can tune single-wavelength, dual-wavelength, and triple-wavelength. Additionally, the optical side mode suppression ratio exceeds 30 dB. Since we combine the colorless laser diode with a tunable optical filter, the proposed tunable laser source stabilizes multi-wavelengths simultaneously. Our proposed tunable laser source is very useful for applications such as optical test instruments, optical communication systems, and optical fiber sensing systems.

  19. Dual-wavelength diode laser with electrically adjustable wavelength distance at 785  nm.

    Science.gov (United States)

    Sumpf, Bernd; Kabitzke, Julia; Fricke, Jörg; Ressel, Peter; Müller, André; Maiwald, Martin; Tränkle, Günther

    2016-08-15

    A spectrally adjustable monolithic dual-wavelength diode laser at 785 nm as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS) is presented. The spectral distance between the two excitation wavelengths can be electrically adjusted between 0 and 2.0 nm using implemented heater elements above the distributed Bragg reflector (DBR) gratings. Output powers up to 180 mW at a temperature of 25°C were measured. The spectral width is smaller than 13 pm, limited by the spectrum analyzer. The device is well-suited for Raman spectroscopy, and the flexible spectral distance allows a target-specific adjustment of the excitation light source for shifted excitation Raman difference spectroscopy (SERDS).

  20. Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

    Science.gov (United States)

    Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

    2017-07-01

    Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

  1. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  2. Gummy Smile Correction with Diode Laser: Two Case Reports

    Science.gov (United States)

    Narayanan, Mahesh; Laju, S; Erali, Susil M; Erali, Sunil M; Fathima, Al Zainab; Gopinath, P V

    2015-01-01

    Beautification of smiles is becoming an everyday requirement in dental practice. Apart from teeth, gingiva also plays an important role in smile esthetics. Excessive visualization of gingiva is a common complaint among patients seeking esthetic treatment. A wide variety of procedures are available for correction of excessive gum display based on the cause of the condition. Soft tissue diode laser contouring of gingiva is a common procedure that can be undertaken in a routine dental setting with excellent patient satisfaction and minimal post-operative sequale. Two cases of esthetic crown lengthening with diode laser 810 nm are presented here. PMID:26668491

  3. Characteristic of laser diode beam propagation through a collimating lens.

    Science.gov (United States)

    Xu, Qiang; Han, Yiping; Cui, Zhiwei

    2010-01-20

    A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

  4. Rectified diode response of a multimode quantum cascade laser integrated terahertz transceiver

    CERN Document Server

    Dyer, Gregory C; Cich, Michael J; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

    2016-01-01

    We characterized the DC transport response of a diode embedded in a THz quantum cascade laser as the laser current was changed. The overall response is described by parallel contributions from the rectification of the laser field due to the non-linearity of the diode I-V and from thermally activated transport. Sudden jumps in the diode response when the laser changes from single mode to multi-mode operation, with no corresponding jumps in output power, suggest that the coupling between the diode and laser field depends on the spatial distribution of internal fields. The results demonstrate conclusively that the internal laser field couples directly to the integrated diode.

  5. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.;

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers...

  6. Development of diode-pumped medical solid-state lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Cheol Jung; Kim, Min Suk

    2000-09-01

    Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively.

  7. Superluminescent diode versus Fabry-Perot laser diode seeding in pulsed MOPA fiber laser systems for SBS suppression

    Science.gov (United States)

    Melo, M.; Sousa, J. M.; Salcedo, J. R.

    2015-03-01

    We demonstrate the use of a pulsed superluminescent diode (SLD) through direct current injection modulation as seeding source in a master oscillator power amplifier (MOPA) configuration when compared to a Fabry-Perot (FP) laser diode in the same system. The performance limitations imposed by the use of the Fabry-Perot lasers, caused by the backward high peak power pulses triggered due to stimulated Brillouin scattering (SBS) are not observed in the case of the SLD. Compared to conventional Fabry-Perot laser diodes, the SLD provides a smooth and broad output spectrum which is independent of the input pulse parameters. Moreover, the spectrum can be sliced and tailored to the application. Thus, free SBS operation is shown when using the SLD seeder in the same system, allowing for a significant increase on the extractable power and energy.

  8. Blue laser diode (LD) and light emitting diode (LED) applications

    Science.gov (United States)

    Bergh, Arpad A.

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

  9. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam ...

  10. Laser brackets debonding: Tm:YAP, Nd:YAG, and GaAs diode lasers evaluation

    Science.gov (United States)

    Dostálová, Tat'jana; Jelínková, Helena; Šulc, Jan; Koranda, Petr; Němec, Michal; Ivanov, Ilja; Miyagi, Mitsunobu; Iwai, Katsumasa

    2009-02-01

    The study demonstrates the possibility of using laser radiation for the ceramic bracket removing. Three laser radiations were examined for this effect and the removing possibility and velocity together with enamel and root damage were investigated. A diode pumped Tm:YAP microchip laser generating a wavelength 1.9 μm, diode pumped Nd:YAG laser with 1.44 μm wavelength, GaAs diode with 0.808 μm were used for the debonding purpose. The measurement of transmission and absorption of the basic element - bracket, adhesive resin, and enamel was also made with the goal to explain the source of the heat and bracket debonding. The explanation of the debonding effect is also presented. From the results it is possible to conclude that continuously running diode pumped microchip Tm:YAP laser having output power 1W can be a good candidate for ceramic bracket debonding procedure.

  11. Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

    Science.gov (United States)

    Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

    1999-01-01

    The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

  12. Laser diode stacks:pulsed light power for nuclear fusion

    Institute of Scientific and Technical Information of China (English)

    Martin Wlz; Agnieszka Pietrzak; Alex Kindsvater; Jens Meusel; Klaus Stolberg; Ralf Hlsewede; Jrgen Sebastian; Valentin Loyo-Maldonado

    2016-01-01

    Laser drivers are an enabling factor to inertial confinement fusion, because laser diodes must be used instead of flash lamps. We discuss the limitations of laser diode arrays and show what steps the industry is taking. The pump power requirements of large-scale projects such as LIFE or Hi PER are within reach of semiconductor laser diode assemblies.Pulsed light output powers per laser bars have been around 300 W per bar, as in the Jenoptik 940 nm bars previously used for pumping the Yb:YAG slabs in the Di POLE project. By redesigning the semiconductor laser structures 500 W per bar is now commercially available for 808, 880 and 940 nm pump wavelengths. The construction of one inertial fusion power plant will require an amount of semiconductor laser chips in excess of the current annual production by two orders of magnitude. This adds to the engineering task of improving the device characteristics a challenge to production capacity.While the industry benefits from the recent boost in solid-state lighting that acts as a technology driver, cooperation between manufacturers will be imperative, and to this end we propose standardization efforts.

  13. INFRARED DIODE LASER RETINAL TREATMENT FOR CHRONIC HEADACHE

    Directory of Open Access Journals (Sweden)

    Subba Rao

    2013-12-01

    Full Text Available ABSTRACT: Nearly 60 to 70 crores of people all over the world are suffering from various types of chronic headache. This is one of the commonest medical problems. To get relief from headache various medical treatments are used with little success. The aim of our study is to give permanent treatment to chronic headache patients by using infrared diode laser selective retinal photocoagulati on. NIDEK infrared diode laser with NIDEK SL40 slit - lamp and NIDEK digital fundus camera for retinal evaluation, MAINSTER 135D lens for laser beam focusing and retinal examination and TOPCON non - contact tonometer for intra ocular pressure measurements are used. Diode laser is chosen because of its deep penetration into all the layers of retina and choroid. 500 cases of chronic headache were studied. Laser photocoagulation was given in selective areas of retina in 2 to 3 sessions with 15 days interval. 10 to 60 years age group were studied. 90% of patients who got laser treatment are relieved from their headache in severity and in frequency. 80% of patients needed 2 sittings and 20% of patients needed 3 sittings. 70% of patients got relief from headache by fi rst sitting itself. 50% of patients are not only relieved from their headaches but also noticed visual clarity improvement. Retinal ischaemia is one of the main cause for ocular pain and headache. Laser treatment will improve circulation by reducing ischae mia thereby relieves ocular pain and headache

  14. Method and system for homogenizing diode laser pump arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bayramian, Andrew James

    2016-05-03

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  15. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms.

    Science.gov (United States)

    Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro; Kozuma, Mikio

    2015-07-01

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources for laser cooling experiments including transportable optical lattice clocks.

  16. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta

    2011-01-01

    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  17. High brightness diode-pumped organic solid-state laser

    CERN Document Server

    Zhao, Zhuang; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien

    2015-01-01

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  18. High brightness diode-pumped organic solid-state laser

    Science.gov (United States)

    Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien

    2015-02-01

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  19. Analysis of Thermal Effects in Laser Rod Pumped by Repetitively Pulsed Laser Diode Array

    Institute of Scientific and Technical Information of China (English)

    DAI Qin; LI Xin-zhong; WU Ri-na; WANG Xi-jun

    2007-01-01

    Based on some assumptions, the numerical model of thermal distribution in solid state laser crystal pumped by pulsed laser diode is set up due to the pumped intensity distribution. Taking into account the property of YAG materials that varies with temperature, the transient temperature distribution of the laser crystal is calculated using finite element method on condition that K is a constant and a function of temperature. Then, the influence of the pumping parameters on the thermal effect in laser crystal is also discussed. This study is helpful to optimize the design of the diode side pumped solid state lasers.

  20. Polarization/Spatial Combining of Laser-Diode Pump Beams

    Science.gov (United States)

    Gelsinger, Paul; Liu, Duncan

    2008-01-01

    A breadboard version of an optical beam combiner is depicted which make it possible to use the outputs of any or all of four multimode laser diodes to pump a non-planar ring oscillator (NPRO) laser. The output of each laser diode has a single-mode profile in the meridional plane containing an axis denoted the 'fast' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis. One of the purposes served by the beam-combining optics is to reduce the fast-axis numerical aperture (NA) of the laser-diode output to match the NA of the optical fiber. Along the slow axis, the unmodified laser-diode NA is already well matched to the fiber optic NA, so no further slow-axis beam shaping is needed. In this beam combiner, the laser-diode outputs are collimated by aspherical lenses, then half-wave plates and polarizing beam splitters are used to combine the four collimated beams into two beams. Spatial combination of the two beams and coupling into the optical fiber is effected by use of anamorphic prisms, mirrors, and a focusing lens. The anamorphic prisms are critical elements in the NA-matching scheme, in that they reduce the fast-axis beam width to 1/6 of its original values. Inasmuch as no slow-axis beam shaping is needed, the collimating and focusing lenses are matched for 1:1 iumaging. Because these lenses are well corrected for infinite conjugates the combiner offers diffraction-limited performance along both the fast and slow axes.

  1. Generation of incoherent light from a laser diode based on the injection of an emission from a superluminescent diode

    CERN Document Server

    Takamizawa, Akifumi; Ikegami, Takeshi

    2013-01-01

    In this study, incoherent light with a spectral linewidth of 7 nm and 140 mW of power was generated from a laser diode into which incoherent light emitted from a superluminescent diode was injected with 2.7 mW of power. The spectral linewidth of the light from the laser diode was broadened to 12 nm when the diode's output power was reduced to 15 mW. In the process of transformation from single-mode laser light to incoherent light with a broad spectrum by increasing injection-light power, multimode laser oscillation and a noisy spectrum were found in the light from the laser diode. This optical system can be used not only for amplification of incoherent light but also as a coherence-convertible light source.

  2. Diode laser osteoperforation and its application to osteomyelitis treatment

    Science.gov (United States)

    Privalov, Valeriy A.; Krochek, Igor V.; Lappa, Alexander V.

    2001-10-01

    Laser osteoperforation, previously studied in experiment in rabbits at treatment for acute purulent osteomyelitis (Privalov V. et.al., SPIE Proc., v.3565., pp. 72-79), was applied in clinic to 36 patients with chronic purulent osteomyelitis and to 6 patients (children) with acute haematogenic osteomyelitis. Diode lasers of 805 and 980 nm wavelength were used. There was achieved full recovery in all acute cases, and stable remission in chronic cases during all the observation period (1 - 2.5 years).

  3. Diode lasers: A magical wand to an orthodontic practice

    Directory of Open Access Journals (Sweden)

    Vipul Kumar Srivastava

    2014-01-01

    Full Text Available LASER (Light Amplification by Stimulated Emission of Radiation is a powerful source of light, which has innumerable applications in all the fields of science including medicine and dentistry. It is one such technology that has become a desirable and an inseparable alternative to many traditional surgical procedures being held in the field of dentistry, and orthodontics is no exception. The current article describes the uses of a diode laser as an indispensable tool in an orthodontic office.

  4. Fiber Coupled Laser Diodes with Even Illumination Pattern

    Science.gov (United States)

    Howard, Richard T. (Inventor)

    2007-01-01

    An optical fiber for evenly illuminating a target. The optical fiber is coupled to a laser emitting diode and receives laser light. The la ser light travels through the fiber optic and exits at an exit end. T he exit end has a diffractive optical pattern formed thereon via etch ing, molding or cutting, to reduce the Gaussian profile present in co nventional fiber optic cables The reduction of the Gaussian provides an even illumination from the fiber optic cable.

  5. Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

    Science.gov (United States)

    Sato, Kenji; Wakita, Koichi; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo; Takada, Atsushi

    1994-07-01

    Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.

  6. High Power Diode Lasers with External Feedback: Overview and Prospects

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...

  7. Pseudoepitheliomatous hyperplasia after diode laser oral surgery. An experimental study

    Science.gov (United States)

    Seoane, Juan; González-Mosquera, Antonio; García-Martín, José-Manuel; García-Caballero, Lucía; Varela-Centelles, Pablo

    2015-01-01

    Background To examine the process of epithelial reparation in a surgical wound caused by diode laser. Material and Methods An experimental study with 27 Sprage-Dawley rats was undertaken. The animals were randomly allocated to two experimental groups, whose individuals underwent glossectomy by means of a diode laser at different wattages, and a control group treated using a number 15 scalpel blade. The animals were slaughtered at the 2nd, 7th, and 14th day after glossectomy. The specimens were independently studied by two pathologists (blinded for the specimens’ group). Results At the 7th day, re-epithelisation was slightly faster for the control group (conventional scalpel) (p=0.011). At the 14th day, complete re-epithelization was observed for all groups. The experimental groups displayed a pseudoepitheliomatous hyperplasia. Conclusions It is concluded that, considering the limitations of this kind of experimental studies, early re-epithelisation occurs slightly faster when a conventional scalpel is used for incision, although re-epithelisation is completed in two weeks no matter the instrument used. In addition, pseudoepitheliomatous hyperplasia is a potential event after oral mucosa surgery with diode laser. Knowledge about this phenomenon (not previously described) may prevent diagnostic mistakes and inadequate treatment approaches, particularly when dealing with potentially malignant oral lesions. Key words:Diode laser, animal model, oral biopsy, oral cancer, oral precancer, pseudoepitheliomatous hyperplasia. PMID:26116841

  8. High-power non linear frequency converted laser diodes

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh;

    2015-01-01

    We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity...

  9. Fast Tunable Wavelength Sources Based on the Laser Diode Array

    Institute of Scientific and Technical Information of China (English)

    Sung-Chan; Cho; Hyun; Ha; Hong; Byoung-Whi; Kim

    2003-01-01

    We report a demonstration of a fast wavelength tunable source (TWS) based on the laser diode array coupled to the arrayed waveguide grating (AWG) multiplexer. The switching and optical characteristics of TWS make it a candidate for implementing the wavelength-division space switch fabric for an optical packet/burst switching.

  10. A Laser-Diode End-Pumped Nd:YVO4 Slab Laser at 1342 nm

    Institute of Scientific and Technical Information of China (English)

    YAN Ying; ZHANG Heng-Li; LIU Yang; XING Ji-Chuan; XIN Jian-Guo

    2009-01-01

    A laser-diode end-pumped Nd:YV04 slab laser with a fiat-concave stable cavity at 1342nm is demonstrated. Under the pumping power of 92 W, a cw laser of output 17.8 W is obtained with the slope efficiency of 25.6%.

  11. 946 nm Diode Pumped Laser Produces 100mJ

    Science.gov (United States)

    Axenson, Theresa J.; Barnes, Norman P.; Reichle, Donald J., Jr.

    2000-01-01

    An innovative approach to obtaining high energy at 946 nm has yielded 101 mJ of laser energy with an optical-to-optical slope efficiency of 24.5%. A single gain module resonator was evaluated, yielding a maximum output energy of 50 mJ. In order to obtain higher energy a second gain module was incorporated into the resonator. This innovative approach produced un-surprised output energy of 101 mJ. This is of utmost importance since it demonstrates that the laser output energy scales directly with the number of gain modules. Therefore, higher energies can be realized by simply increasing the number of gain modules within the laser oscillator. The laser resonator incorporates two gain modules into a folded "M-shaped" resonator, allowing a quadruple pass gain within each rod. Each of these modules consists of a diode (stack of 30 microlensed 100 Watt diode array bars, each with its own fiber lens) end-pumping a Nd:YAG laser rod. The diode output is collected by a lens duct, which focuses the energy into a 2 mm diameter flat to flat octagonal pump area of the laser crystal. Special coatings have been developed to mitigate energy storage problems, including parasitic lasing and amplified spontaneous emission (ASE), and encourage the resonator to operate at the lower gain transition at 946 nm.

  12. C. W. GaAs Diode Laser

    Science.gov (United States)

    1975-12-01

    laser fabrication , assembly, and evaluation. The principal personnel responsible for the BeO materials effort at Rockwell International were Dr...principal areas. The first area was the optimization of the semiconductor growth and laser fabrication techniques to achieve lasers with low

  13. Monolithic Rare Earth Doped PTR Glass Laser Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Development of airborne and spaceborne laser systems dictates a number of extremely challenging requirements for such fine optical devices. These requirements...

  14. Narrow-Bandwidth Diode-Laser-Based Ultraviolet Light Source

    Institute of Scientific and Technical Information of China (English)

    PENG Yu; FANG Zhan-Jun; ZANG Er-Jun

    2011-01-01

    A compact, tunable and narrow-bandwidth laser source for ultraviolet radiation is presented. A grating stabilized diode laser at 1064 nm is frequency-stabilized to below 10 kHz by using a ultra low expansion (ULE) cavity. Injecting light of the diode laser into a tapered amplifier yields a power of 290mW. In a first frequency-doubling stage, about 47 mW of green light at 532nm is generated by using a periodical// poled KTP crystal. Subsequent second-harwonic generation employing a BBO crystal leads to about 30μW of ultraviolet light at 266nm.%A compact,tunable and narrow-bandwidth laser source for ultraviolet radiation is presented.A grating stabilized diode laser at 1064nm is frequency-stabilized to below 10kHz by using a ultra low expansion (ULE) cavity.Injecting light of the diode laser into a tapered amplifier yields a power of 290 mW.In a first frequency-doubling stage,about 47mW of green light at 532nm is generated by using a periodically poled KTP crystal.Subsequent second-harmonic generation employing a BBO crystal leads to about 30 μ W of ultraviolet light at 266nm.Hg is,so far,the heaviest nonradioactive atom that has been laser-cooled and trapped.Systematic evaluation of various sources of uncertainty for the Hg-based optical lattice clock is obtained and an accuracy of better than 10-1s is attainable,which is an order of magnitude of improvement over Sr or Yb based clocks because of the reduced susceptibility to the blackbody radiation field,which sets a major limitation on the accuracy of atomic clocks.[1] The 1S0-3p0 transition at 265.6 nm will be exploited as a clock transition.

  15. Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

    KAUST Repository

    Nayak, Pranati

    2017-09-01

    The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

  16. High power pump laser diodes for 2μm fibre laser

    Science.gov (United States)

    Pawlik, S.; Todt, R.; Moser, M.; Romero, O.; Lichtenstein, N.

    2014-03-01

    We report on our recent developments at II-VI Laser Enterprise of laser diode sources for the 79x nm range. High power conversion efficiency in excess of 62% was demonstrated. For high power applications like Thulium fiber laser pumping we have achieved an output power of more than 12.5W in CW operation for 94 μm wide broad-area single-emitters. We added the functionality of wavelength stabilization to the laser diodes by using a distributed feedback grating (DFB). Locking has been obtained over the full current range between 1A and 4A tested so far with some margin for temperature variation. For efficient fiber laser pumping the laser diodes were integrated in a multi-emitter platform, achieving 38 W out of a 105 μm fiber within 0.15 NA.

  17. Tunable Diode Laser Absorption Spectroscopy Verification Analysis for Use in the Combustion Optimization and Analysis Laser Laboratory

    Science.gov (United States)

    2009-03-01

    5 Figure 4: Coherent Verdi -5 Nd:YAG laser........................................................................ 6 Figure 5: Cheetah Series...broadband dye laser also assembled by ISSI, the Verdi 5 Nd:YVO4 laser produced by Coherent, and 5 the DFB diode Laser produced by Cheetah...narrowband dye laser with frequency doubler 6 Figure 4: Coherent Verdi -5 Nd:YAG laser Figure 5: Cheetah Series DFB diode laser 1.4

  18. Completely monolithic linearly polarized high-power fiber laser oscillator

    Science.gov (United States)

    Belke, Steffen; Becker, Frank; Neumann, Benjamin; Ruppik, Stefan; Hefter, Ulrich

    2014-03-01

    We have demonstrated a linearly polarized cw all-in-fiber oscillator providing 1 kW of output power and a polarization extinction ratio (PER) of up to 21.7 dB. The design of the laser oscillator is simple and consists of an Ytterbium-doped polarization maintaining large mode area (PLMA) fiber and suitable fiber Bragg gratings (FBG) in matching PLMA fibers. The oscillator has nearly diffraction-limited beam quality (M² high power 6+1:1 pump coupler. The slope efficiency of the laser is 75 %. The electro/optical efficiency of the complete laser system is ~30 % and hence in the range of Rofin's cw non-polarized fiber lasers. Choosing an adequate bending diameter for the Yb-doped PLMA fiber, one polarization mode as well as higher order modes are sufficiently supressed1. Resulting in a compact and robust linearly polarized high power single mode laser without external polarizing components. Linearly polarized lasers are well established for one dimensional cutting or welding applications. Using beam shaping optics radially polarized laser light can be generated to be independent from the angle of incident to the processing surface. Furthermore, high power linearly polarized laser light is fundamental for nonlinear frequency conversion of nonlinear materials.

  19. Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode

    DEFF Research Database (Denmark)

    Ou, Yiyu; Corell, Dennis Dan; Dam-Hansen, Carsten

    2011-01-01

    simulation results show that a moth-eye structure enhances the light extraction efficiency over the entire visible light range with an extraction efficiency enhancement of up to 26 %. Also for the first time to our best knowledge, the influence of sub-wavelength structures on both the color rendering index......We have theoretically investigated the influence of antireflective sub-wavelength structures on a monolithic white light-emitting diode (LED). The simulation is based on the rigorous coupled wave analysis (RCWA) algorithm, and both cylinder and moth-eye structures have been studied in the work. Our...... (CRI) and the correlated color temperature (CCT) of the monolithic white LED have been demonstrated. The CRI of the monolithic white LED could be improved from 92.68 to around 94 by applying a cylinder structure, and the CCT could be modified in a very large range with appropriate design...

  20. Plasma formation in diode pumped alkali lasers sustained in Cs

    Science.gov (United States)

    Markosyan, Aram H.; Kushner, Mark J.

    2016-11-01

    In diode pumped alkali lasers (DPALs), lasing action occurs on the resonant lines of alkali atoms following pumping by broadband semiconductor lasers. The goal is to convert the efficient but usually poor optical quality of inexpensive diode lasers into the high optical quality of atomic vapor lasers. Resonant excitation of alkali vapor leads to plasma formation through the excitation transfer from the 2P states to upper lying states, which then are photoionized by the pump and intracavity radiation. A first principles global model was developed to investigate the operation of the He/Cs DPAL system and the consequences of plasma formation on the efficiency of the laser. Over a range of pump powers, cell temperatures, excitation frequency, and mole fraction of the collision mixing agent (N2 or C2H6), we found that sufficient plasma formation can occur that the Cs vapor is depleted. Although N2 is not a favored collisional mixing agent due to large rates of quenching of the 2P states, we found a range of pump parameters where laser oscillation may occur. The poor performance of N2 buffered systems may be explained in part by plasma formation. We found that during the operation of the DPAL system with N2 as the collisional mixing agent, plasma formation is in excess of 1014-1015 cm-3, which can degrade laser output intensity by both depletion of the neutral vapor and electron collisional mixing of the laser levels.

  1. In-volume heating using high-power laser diodes

    Science.gov (United States)

    Denisenkov, Valentin S.; Kiyko, Vadim V.; Vdovin, Gleb V.

    2015-03-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heating with different approaches to make the heat distribution more uniform and the process more efficient. High-power lasers can in theory provide in-bulk heating which can sufficiently increase the uniformity of heat distribution thus making the process more efficient. We chose two media (vegetable fat and glucose) for feasibility experiments. First, we checked if the media have necessary absorption coefficients on the wavelengths of commercially available laser diodes (940-980 nm). This was done using spectrophotometer at 700-1100 nm which provided the dependences of transmission from the wavelength. The results indicate that vegetable fat has noticeable transmission dip around 925 nm and glucose has sufficient dip at 990 nm. Then, after the feasibility check, we did numerical simulation of the heat distribution in bulk using finite elements method. Based on the results, optimal laser wavelength and illuminator configuration were selected. Finally, we carried out several pilot experiments with high-power diodes heating the chosen media.

  2. Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

    Science.gov (United States)

    Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

    2009-02-10

    Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

  3. High-power diode lasers and their direct industrial applications

    Science.gov (United States)

    Loosen, Peter; Treusch, Hans-Georg; Haas, C. R.; Gardenier, U.; Weck, Manfred; Sinnhoff, V.; Kasperowski, S.; vor dem Esche, R.

    1995-04-01

    The paper summarizes activities of the two Fraunhofer-Institutes ILT and IPT concerning the development of high-power laser-diode stacks and their direct industrial applications. With microchannel coolers in copper technology and ultra-precision machined micro-optics a stack of 330 - 400 W total power with a maximum intensity of the focused beam of 2 104 W/cm2 has been built and tested in first applications. By further improvements of the lens-fabrication and -alignment technology as well as increase of the number of stacked diodes an output power in the kW-range and intensities up to about 105 W/cm2 shall be achieved in the near future. Applications of such laser sources in surface technology, in the processing of plastics, in laser-assisted machining and in brazing are discussed.

  4. Measuring the linewidth of a stabilized diode laser

    CERN Document Server

    Muanzuala, Lal; Sylvan, Karthik; Natarajan, Vasant

    2015-01-01

    We demonstrate a straight-forward technique to measure the linewidth of a grating-stabilized diode laser system---known as an external cavity diode laser (ECDL)---by beating the output of two independent ECDLs in a Michelson interferometer, and then taking the Fourier transform of the beat signal. The measured linewidth is the sum of the linewidths of the two laser systems. Assuming that the two are equal, we find that the linewidth of each ECDL measured over a time period of 2 \\textmu s is about 0.3 MHz. This narrow linewidth shows the advantage of using such systems for high-resolution spectroscopy and other experiments in atomic physics.

  5. Neodymium YAG lasers pumped by light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bilak, V.I.; Goldobin, I.S.; Zverev, G.M.; Kuratev, I.I.; Pashkov, V.A.; Stel' makh, M.F.; Tsvetkov, Y.V.; Solov' eva, N.M.

    1981-11-01

    The results are presented of theoretical and experimental investigations of room-temperature YAG:Nd lasers pumped by light-emitting diodes. The lasing characteristics of a laser operated at the 1.06 and 1.32 ..mu.. wavelengths were investigated in the cw and pulsed regimes and dependences of its parameters on the temperature, pulse repetition frequency, and other factors were studied. In the pulsed regime the laser efficiency was 0.2% and in the cw regime the radiation power reached 50 and 17 mW at the 1.06 and 1.32 ..mu.. wavelengths, respectively.

  6. Multiple Isotope Magneto Optical Trap from a single diode laser

    CERN Document Server

    Valenzuela, V M; Gutierrez, M; Gomez, E; 10.1364/JOSAB.30.001205

    2013-01-01

    We present a Dual Isotope Magneto Optical Trap produced using a single diode laser. We generate all the optical frequencies needed for trapping both species using a fiber intensity modulator. All the optical frequencies are amplified simultaneously using a tapered amplifier. The independent control of each frequency is on the RF side rather than on the optical side. This introduces an enormous simplification for laser cooling applications that often require an acousto-optic modulator for each laser beam. Frequency changing capabilities are limited by the modulator bandwidth (10 GHz). Traps for more isotopes can be simply added by including additional RF frequencies to the modulator.

  7. Resection of the Tooth Apex with Diode Laser

    Directory of Open Access Journals (Sweden)

    Uzunov Tz.

    2014-06-01

    Full Text Available An “in vitro” experimental study has been carried out on 70 extracted teeth. A laser resection of the root apex has been carried out with diode laser beam with a wavelength of - 810 ± 10 nm. Sequentially a radiation with increasing power has been applied, as follows: 1,3 W, 2W, 3W, 4W, 5W, 6W, 7W, in electro surgery mode. Successful resection of the tooth apex has been performed at: 3W; 4W; 5W; 6W and 7W power. It was established that when laser resected the tooth apex carbonizes.

  8. Electrical and optical study of semiconductor laser diodes and materials

    Science.gov (United States)

    Albin, Sacharia

    1987-01-01

    The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

  9. Frequency-comb-referenced tunable diode laser spectroscopy and laser stabilization applied to laser cooling.

    Science.gov (United States)

    Fordell, Thomas; Wallin, Anders E; Lindvall, Thomas; Vainio, Markku; Merimaa, Mikko

    2014-11-01

    Laser cooling of trapped atoms and ions in optical clocks demands stable light sources with precisely known absolute frequencies. Since a frequency comb is a vital part of any optical clock, the comb lines can be used for stabilizing tunable, user-friendly diode lasers. Here, a light source for laser cooling of trapped strontium ions is described. The megahertz-level stability and absolute frequency required are realized by stabilizing a distributed-feedback semiconductor laser to a frequency comb. Simple electronics is used to lock and scan the laser across the comb lines, and comb mode number ambiguities are resolved by using a separate, saturated absorption cell that exhibits easily distinguishable hyperfine absorption lines with known frequencies. Due to the simplicity, speed, and wide tuning range it offers, the employed technique could find wider use in precision spectroscopy.

  10. Optical 40 GHz pulse source module based on a monolithically integrated mode locked DBR laser

    Science.gov (United States)

    Huettl, B.; Kaiser, R.; Kroh, M.; Schubert, C.; Jacumeit, G.; Heidrich, H.

    2005-11-01

    In this paper the performance characteristics of compact optical 40 GHz pulse laser modules consisting of a monolithic mode-locked MQW DBR laser on GaInAsP/InP are reported. The monolithic devices were fabricated as tunable multi-section buried heterostructure lasers. A DBR grating is integrated at the output port of an extended cavity in order to meet the standardized ITU wavelength channels allocated in the spectral window around 1.55 μm in optical high speed communication networks. The fabricated 40 GHz lasers modules not only emit short optical pulses (< 1.5 ps) with very low amplitude noise (<1.5 %) and phase noise levels (timing jitter: 50 fs) but also enable good pulse-to-pulse phase and long-term stability. A wavelength tuning range of 6 nm is possible and large locking bandwidths between 100 ... 260 MHz are observed. All data have been achieved by operating the lasers in a hybrid mode-locking scheme with a required minimum micro-wave power of only 12 dBm for pulse synchronization. Details on laser chip architecture and module performance are summarized and the results of a stable and error free module performance in first 160 Gb/s (4 x 40 Gb/s OTDM) RZ-DPSK transmission experiments are presented.

  11. Atomic-resolution measurements with a new tunable diode laser-based interferometer

    DEFF Research Database (Denmark)

    Silver, R.M.; Zou, H.; Gonda, S.;

    2004-01-01

    We develop a new implementation of a Michelson interferometer designed to make measurements with an uncertainty of less than 20 pm. This new method uses a tunable diode laser as the light source, with the diode laser wavelength continuously tuned to fix the number of fringes in the measured optical...... laser Michelson interferometer....... path. The diode laser frequency is measured by beating against a reference laser. High-speed, accurate frequency measurements of the beat frequency signal enables the diode laser wavelength to be measured with nominally 20-pm accuracy for the measurements described. The new interferometer design...

  12. A 657-nm narrow bandwidth interference filter-stabilized diode laser

    Institute of Scientific and Technical Information of China (English)

    Zhengbo Wang; Xiaokai Lü; Jingbiao Chen

    2011-01-01

    We present a 657-nm external cavity diode laser (ECDL) system, where the output frequency is stabilized by a narrow-band high transmission interference filter. This novel diode laser system emits laser with an instantaneous linewidth of 7 kHz and a broadened linewidth of 432 kHz.%@@ We present a 657-nm external cavity diode laser (ECDL) system, where the output frequency is stabilized by a narrow-band high transmission interference filter.This novel diode laser system emits laser with an instantaneous linewidth of 7 kHz and a broadened linewidth of 432 kHz.

  13. Comparison of SHG Power Modulation by Wavelength Detuning of DFB- and DBR-Tapered Laser Diodes

    DEFF Research Database (Denmark)

    Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

    2016-01-01

    Pulsed visible lasers are used for a number of applications such as laser displays and medical treatments. Generating this visible light by direct frequency doubling of high power diode lasers opens new possibilities on how the power modulation can be performed. We present an investigation...... of the response of the second harmonic light to perturbations of the infrared laser diode and compare how the response differs for DFB- and DBR-Tapered laser diodes. We show that the visible light can be modulated from CW to kHz with modulation depths above 90% by wavelength detuning the laser diode....

  14. Treatment of Gingival Hyperpigmentation by Diode Laser for Esthetical Purposes

    Directory of Open Access Journals (Sweden)

    Hanaa M. El Shenawy

    2015-08-01

    Full Text Available BACKGROUND: Gingival hyperpigmentation is a common esthetical concern in patients with gummy smile or excessive gingival display. Laser ablation has been recognized recently as the most effective, pleasant and reliable technique. It has the advantage of easy handling, short treatment time, hemostasis, decontamination, and sterilization effect. AIM: In the present study we wanted to explore the efficacy of a 980 nm wavelength diode laser in gingival depigmentation clinically by using both VAS and digital imaging method as means of assessment. METHODS: Diode laser ablation was done for 15 patients who requested cosmetic therapy for melanin pigmented gums. The laser beam delivered by fiberoptic with a diameter of 320 µm, the diode laser system has 980 nm wave lengths and 3 W irradiation powers, in a continuous contact mode in all cases, the entire surface of each pigmented maxillary and mandibular gingiva that required treatment was irradiated in a single session. Clinical examination and digital image analysis were done and the patients were followed up for 3 successive months. RESULTS: There was a statistically significant change in prevalence of bleeding after treatment, as none of the cases showed any signs of bleeding 1 week, 1 month and 3 months after ablation. No statistically significant change was observed in the prevalence of swelling after treatment The VAS evaluation demonstrated that only 4 patients complained of mild pain immediately after the procedure. No pain was perceived from the patients in the rest of the follow up period. There was no statistically significant change in prevalence of pain immediately after treatment compared to pain during treatment. There was a decrease in cases with mild pain after 1 week, 1 month as well as 3 months compared to pain during treatment and immediately after treatment. CONCLUSION: Within the limitations of this study, the use of diode laser was shown to be a safe and effective treatment

  15. Monolithic Highly Stable Yb-Doped Femtosecond Fiber Lasers for Applications in Practical Biophotonics

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2012-01-01

    Operational and environmental stability of ultrafast laser systems is critical for their applications in practical biophotonics. Mode-locked fiber lasers show great promise in applications such as supercontinuum sources or multiphoton microscopy systems. Recently, substantial progress has been made...... in the development of all-fiber nonlinear-optical laser control schemes, which resulted in the demonstration of highly stable monolithic, i.e., not containing any free-space elements, lasers with direct fiber-end delivery of femtosecond pulses. This paper provides an overview of the progress in the development...... of such all-fiber mode-locked lasers based on Yb-fiber as gain medium, operating at the wavelength around 1 $\\mu$m, and delivering femtosecond pulses reaching tens of nanojoules of energy....

  16. Amplitude-stabilized frequency-modulated laser diode and its interferometric sensing applications.

    Science.gov (United States)

    Takahashi, Y; Yoshino, T; Ohde, N

    1997-08-20

    A direct frequency-modulated (FM) laser diode light source without light power variation is developed. The amplitude variation of the FM laser diode is compensated by means of a feedback system with use of a superluminescent diode as an external light power controller. Output power greater than 1 mW is obtained at the modulation frequency to 5 kHz with a >10 stabilization factor. By use of the amplitude-stabilized FM laser diode, we measured subfringes with high accuracy in FM continuous wave interferometry, increased the dynamic range of the displacement measurement, and improved the stabilization factor in the laser diode feedback interferometer.

  17. The role of monolithic integration in advanced laser products

    Science.gov (United States)

    Marsh, John H.

    2006-02-01

    The design and performance of single-mode high-power (>100 mW) semiconductor lasers suitable for integration into large arrays are reported. In 830 nm lasers, quantum well intermixing (QWI) has been used to increase the bandgap of the waveguide in the facet region by 120 meV, and the catastrophic optical damage threshold of uncoated devices increased by a factor of >3 as a result. The passive waveguides are relatively cool, bringing high reliability, improving the single-mode waveguide stability and enabling high-temperature operation. Furthermore, the passive waveguides relax the cleaving and packaging alignment tolerances, giving a high yield process suitable for manufacture. A far-field reduction layer is included in the lasers giving a fast axis divergence of <20° FWHM. Arrays in which each emitter operates at several 100 mW, have excellent uniformity of laser parameters such as kink power, operating power and optical beam profile.

  18. Monolithic DWDM Multi-channel planar waveguide laser

    DEFF Research Database (Denmark)

    Sckerl, Mads W.; Guldberg-Kjær, Søren Andreas; Laurent-Lund, Christian

    1999-01-01

    silica -on-silicon-based multi-channel waveguide laser with four outputs channel with ~ 50 GHz spacing is presented. Excellent control over channel positions and spacings is obtained by the method presented here. Remarkable temperature tuning properties have been obtained.......silica -on-silicon-based multi-channel waveguide laser with four outputs channel with ~ 50 GHz spacing is presented. Excellent control over channel positions and spacings is obtained by the method presented here. Remarkable temperature tuning properties have been obtained....

  19. Diode laser: In treatment of recurrent verrucous leukoplakia

    Science.gov (United States)

    Giri, Debanti; Agarwal, Nitin; Sinha, Abhishek; Srivastava, Sunita; Mishra, Anuj

    2016-01-01

    Laser first came into light in 1960 and had been used extensively in various fields of medicine. Laser has been experimented in the various dental field, and its utility is being recognized and established well in the dentistry. Lasers are widely used for a number of procedures such as cavity preparation, scaling, and root planning, surgical procedures like excision of soft tissue growths, etc., Improved healing, hemostasis, and sutureless excisions are some of the many advantages of laser over conventional treatment modalities. It is because of these advantages that laser is becoming more and more popular as a treatment option in various aspects of dentistry. We hereby present a case report, where we have used diode laser for surgical management of a proliferative verrucous leukoplakia (PVL), because of its many advantages over conventional methods. It presents very specific characteristics, mainly a more aggressive biological behavior than other forms of leukoplakia expressed by: A tendency toward multifocality (field cancerization); a high prospect of recurrence; and a high rate of malignant transformation, which can range between 40% and 100% in a follow-up period of 4.4–11.6 years. In this case, we evaluated the advantages of diode laser for the treatment of verrucous leukoplakia, where the results that we obtained were excellent. The patient had come for evaluation till the time of complete healing. PMID:27307679

  20. Diode laser: In treatment of recurrent verrucous leukoplakia

    Directory of Open Access Journals (Sweden)

    Debanti Giri

    2016-01-01

    Full Text Available Laser first came into light in 1960 and had been used extensively in various fields of medicine. Laser has been experimented in the various dental field, and its utility is being recognized and established well in the dentistry. Lasers are widely used for a number of procedures such as cavity preparation, scaling, and root planning, surgical procedures like excision of soft tissue growths, etc., Improved healing, hemostasis, and sutureless excisions are some of the many advantages of laser over conventional treatment modalities. It is because of these advantages that laser is becoming more and more popular as a treatment option in various aspects of dentistry. We hereby present a case report, where we have used diode laser for surgical management of a proliferative verrucous leukoplakia (PVL, because of its many advantages over conventional methods. It presents very specific characteristics, mainly a more aggressive biological behavior than other forms of leukoplakia expressed by: A tendency toward multifocality (field cancerization; a high prospect of recurrence; and a high rate of malignant transformation, which can range between 40% and 100% in a follow-up period of 4.4–11.6 years. In this case, we evaluated the advantages of diode laser for the treatment of verrucous leukoplakia, where the results that we obtained were excellent. The patient had come for evaluation till the time of complete healing.

  1. Diode laser: In treatment of recurrent verrucous leukoplakia.

    Science.gov (United States)

    Giri, Debanti; Agarwal, Nitin; Sinha, Abhishek; Srivastava, Sunita; Mishra, Anuj

    2016-01-01

    Laser first came into light in 1960 and had been used extensively in various fields of medicine. Laser has been experimented in the various dental field, and its utility is being recognized and established well in the dentistry. Lasers are widely used for a number of procedures such as cavity preparation, scaling, and root planning, surgical procedures like excision of soft tissue growths, etc., Improved healing, hemostasis, and sutureless excisions are some of the many advantages of laser over conventional treatment modalities. It is because of these advantages that laser is becoming more and more popular as a treatment option in various aspects of dentistry. We hereby present a case report, where we have used diode laser for surgical management of a proliferative verrucous leukoplakia (PVL), because of its many advantages over conventional methods. It presents very specific characteristics, mainly a more aggressive biological behavior than other forms of leukoplakia expressed by: A tendency toward multifocality (field cancerization); a high prospect of recurrence; and a high rate of malignant transformation, which can range between 40% and 100% in a follow-up period of 4.4-11.6 years. In this case, we evaluated the advantages of diode laser for the treatment of verrucous leukoplakia, where the results that we obtained were excellent. The patient had come for evaluation till the time of complete healing.

  2. Present state of applying diode laser in Toyota Motor Corp.

    Science.gov (United States)

    Terada, Masaki; Nakamura, Hideo

    2003-03-01

    Since the mid-1980s, Toyota Motor Corporation has applied CO2 lasers and YAG lasers to machine (welding, piercing, cutting, surface modifying etc.) automobile parts. In recent years diode lasers, which are excellent in terms of cost performance, are now available on the market as a new type of oscillator and are expected to bring about a new age in laser technology. Two current problems with these lasers, however, are the lack of sufficient output and the difficulty in improving the focusing the beam, which is why it has not been easy to apply them to the machining of metal parts in the past. On the other hand, plastics can be joined with low energy because they have a lower melting point than metal and the rate of absorption of the laser is easy to control. Moreover, because the high degree of freedom in molding plastic parts results in many complex shapes that need to be welded, Toyota is looking into the use of diode lasers to weld plastic parts. This article will introduce the problems of plastics welding and the methods to solve them referring to actual examples.

  3. Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

    Science.gov (United States)

    Reinl, S.

    Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

  4. Ruggedized microchannel-cooled laser diode array with self-aligned microlens

    Science.gov (United States)

    Freitas, Barry L.; Skidmore, Jay A.

    2003-11-11

    A microchannel-cooled, optically corrected, laser diode array is fabricated by mounting laser diode bars onto Si surfaces. This approach allows for the highest thermal impedance, in a ruggedized, low-cost assembly that includes passive microlens attachment without the need for lens frames. The microlensed laser diode array is usable in all solid-state laser systems that require efficient, directional, narrow bandwidth, high optical power density pump sources.

  5. Design of a monolithic tunable laser based on equivalent-chirp grating reflectors.

    Science.gov (United States)

    Dai, Yitang; Xu, Kun; Wu, Jian; Li, Yan; Hong, Xiaobin; Guo, Hongxiang; Lin, Jintong

    2010-12-01

    A Vernier-tuned distributed Bragg reflector (DBR) semiconductor laser is an effective monolithic approach for wide wavelength tunability, at the expense, however, of costly electron-beam lithography during fabrication. In this Letter, a tunable laser design with equivalent-chirp based, flat-top envelope grating reflectors is proposed that can be implemented easily by conventional two-beam interference lithography. The principle is described, and a detailed design shows uniform output power (0.08 dB variation) and excellent side-mode suppression ratio (47 dB minimum) within a wide tuning range (>32 nm) through numerical simulation.

  6. Widely Tunable Monolithic Mid-Infrared Quantum Cascade Lasers Using Super-Structure Grating Reflectors

    OpenAIRE

    Dingkai Guo; Jiun-Yun Li; Liwei Cheng; Xing Chen; Terry Worchesky; Fow-Sen Choa

    2016-01-01

    A monolithic, three-section, and widely tunable mid-infrared (mid-IR) quantum cascade laser (QCL) is demonstrated. This electrically tuned laser consists of a gain section placed between two super structure grating (SSG) distributed Bragg reflectors (DBRs). By varying the injection currents to the two grating sections of this device, its emission wavelength can be tuned from 4.58 μm to 4.77 μm (90 cm−1) with a supermode spacing of 30 nm. This type of SSG-DBR QCLs can be a compact replacement ...

  7. Analysis of Laser Diode Pumped Solid-State Laser Resonator by the Transform Circle Approach

    Institute of Scientific and Technical Information of China (English)

    SONG Feng; ZHANG Guang-Yin; XU Jing-Jun; ZHANG Chao-Bo

    2000-01-01

    The typical laser characteristics of a laser diode pumped solid-state laser with a Z-type resonator structure are analyzed by the transform circle approach. Laser waists change with the thermal focus length of the lasing medium so that the output power becomes unstable. In particular, there is a very unstable operation region when the pump power is of medium magnitude. A method is put forward to avoid this situation.

  8. Superluminescent diode and single mode laser

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, S.K.; Lau, K.Y.; BarChim, N.; Ury, I.

    1989-06-27

    A buried heterostructure superluminescent diode is described comprising: an elongated active gain layer having an output end and a non-output end; a first n-type cladding layer on one face of the gain layer and a second p-type cladding layer on the other face of the gain layer for pumping the active gain layer, the cladding layer having a lower index of refraction than the active gain layer; a blocking layer having a lower index of refraction than the active gain layer along each longitudinal edge of the active gain layer; and a light absorbing medium at the non-output end of the active gain layer.

  9. Femtosecond laser fabrication of monolithically integrated microfluidic sensors in glass.

    Science.gov (United States)

    He, Fei; Liao, Yang; Lin, Jintian; Song, Jiangxin; Qiao, Lingling; Cheng, Ya; Sugioka, Koji

    2014-10-17

    Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D) structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  10. Femtosecond Laser Fabrication of Monolithically Integrated Microfluidic Sensors in Glass

    Directory of Open Access Journals (Sweden)

    Fei He

    2014-10-01

    Full Text Available Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  11. [Endonasal and endocanalicular dacryocystorhinostomy by diode laser. Preliminary results].

    Science.gov (United States)

    Alañón Fernández, M A; Alañón Fernández, F J; Martínez Fernández, A; Cárdenas Lara, M; Rodríguez Domínguez, R; Ballesteros Navarro, J M; Sainz Quevedo, M

    2004-04-01

    To describe the surgical technique and to evaluate the clinical results after having performed the transcanalicular and endocanalicular dacryocystorhinostomies by diode laser, including the advantages and limits of this technique. 34 were performed by diode laser in patients with clinical history of epiphora, with or without mucopurulent secretion, for nasolacrimal duct obstruction. The study was prospective, interventional, non randomized and non comparative. Diode laser was used to realize vaporization of lacrimal sac, osteotomy and vaporization with coagulation of nasal mucosa. The mean of surgical time was 15 minutes (range 7 to 29 minutes). Bicanalicular intubation was performed with a silicone tube and prolene filament for two months in all cases. Postsurgical follow-up was between 4 and 11 months. The degree of epiphora was evaluated by the Munk scale and lacrimal permeability was evaluated by endoscopic functional staining test in all cases. Out of the 34 DCR-EDN+ENC that were performed, 32 cases (94.11%) remain asymptomatic. Two of them (5.88%) required endonasal dacryocystorhinostomies by drilling, because the bony perforation was impossible to achieve by laser fiber. Two cases (5.88%) presented fibrosis and lacrimal and lower canaliculi obstruction, without epiphora because the superior canaliculi was permeable. Endonasal and endocanalicular dacryocystorhinostomy technique performed by diode laser is a valid method. It does not cause cutaneous scarring, it decreases thermic canalicular damage, it respects the lacrimal pump, it minimizes pain and bleeding, it needs less surgical time and it has turned into an out-patient procedure with a minimal surgical and postsurgical morbility.

  12. Synergistic skin heat shock protein expression in response to combined laser treatment with a diode laser and ablative fractional lasers.

    Science.gov (United States)

    Paasch, Uwe; Sonja, Grunewald; Haedersdal, Merete

    2014-06-01

    Diode laser-based skin heating has been shown to minimise scars by interfering with wound healing responses through the induction of heat shock proteins (HSP). HSP are also induced after ablative fractional laser (AFXL) wound healing. AFXL itself is highly recommended for scar treatment. Therefore, the sequential combination of both modalities may produce superior outcomes. The aim of this study was to examine the pretreatment effects of a diode laser before AFXL on wound healing responses in terms of HSP up-regulation in an in vitro model. Immediate responses and responses on days 1, 3 or 6 post-procedure were studied in an in vitro porcine skin model (n = 240). Untreated samples served as control. Immunohistochemical investigation (Hsp70) was performed in all untreated controls, diode laser-, AFXL-, and in diode laser + AFXL-treated samples. Hsp70 was shown to be up-regulated by all interventions between days 1 and 6 after interventions. The largest effect was caused by the combination of a diode laser and an AFXL procedure. Diode laser exposure induces a skin HSP response that can be further enhanced by sequential AFXL treatment. Clinical studies are necessary to investigate the dose response of HSP on scar formation and refine suitable laser exposure settings.

  13. Packaging of hard solder 500W QCW diode laser array

    Science.gov (United States)

    Li, Xiaoning; Wang, Jingwei; Hou, Dong; Nie, Zhiqiang; Liu, Xingsheng

    2016-03-01

    The package structure critically influences the major characteristics of diode laser, such as thermal behavior, output power, wavelength and smile effect. In this work, a novel micro channel cooler (MCC) for stack array laser with good heat dissipation capability and high reliability is presented. Numerical simulations of thermal management with different MCC structure are conducted and analyzed. Based on this new MCC packaging structure, a series of QCW 500W high power laser arrays with hard solder packaging technology has been fabricated. The performances of the laser arrays are characterized. A narrow spectrum of 3.12 nm and an excellent smile value are obtained. The lifetime of the laser array is more than 1.38×109 shots and still ongoing.

  14. Biostimulation with diode laser positively regulates cementoblast functions, in vitro.

    Science.gov (United States)

    Bozkurt, Serife Buket; Hakki, Erdogan E; Kayis, Seyit Ali; Dundar, Niyazi; Hakki, Sema S

    2017-05-01

    The aim of this study was to evaluate the effects of diode laser biostimulation on cementoblasts (OCCM.30). A total of 40 root plates were obtained from healthy third molar teeth and assigned to the following two groups: (1) control group and (2) laser-treated group. Root plates were placed into the cell culture inserts, and OCCM.30 cells were seeded onto root plates. Cells were irradiated with a low level of diode laser (power: 0.3 W in continuous wave, 60 s/cm(2)). Proliferation and mineralized tissue-associated gene's and BMP's messenger RNA (mRNA) expressions of cementoblasts were evaluated. Total RNAs were isolated on day 3 and integrin-binding sialoprotein (Ibsp), bone gamma-carboxyglutamate protein (Bglap), Type I collagen (Col1a1), osteoblastic transcription factor, runt-related transcription factor (Runx2), and Bone Morphogenetic Protein (BMP)-2, 3, 4, 6, and 7 mRNA expressions were determined using quantitative RT-PCR. von Kossa staining was performed to evaluate biomineralization of OCCM.30 cells. In the proliferation experiment, while there was no significant difference until 96 h, laser irradiation retarded the decrease in cell proliferation trend after 96 h compared to the untreated control group. Statistically significant increase in Ibsp, Bglap, and BMP-2,3,6,7 mRNA expressions were noted in the laser groups when compared to the untreated control group (p < 0.05). Laser irradiation induced mineralized nodule formation of cementoblasts. The results of this study reveal that the biostimulation setting of diode laser modulates the behavior of cementoblasts inducing mineralized tissue-associated gene's mRNA expressions and mineralization. Therefore, biostimulation can be used during regenerative periodontal therapies to trigger cells with periodontal attachment apparatus.

  15. Diode laser photocoagulation in PHACES syndrome hemangiomas: a case series

    Science.gov (United States)

    Romeo, U.; Russo, N.; Polimeni, A.; Favia, G.; Lacaita, M. G.; Limongelli, L.; Franco, S.

    2014-01-01

    PHACES syndrome is a pediatric syndrome with cutaneous and extra-cutaneous manifestations, such as Posterior fossa defects, Hemangiomas, Arterial lesions, Cardiac abnormalities/aortic coarctation, Eye abnormalities and Sternal cleft. Facial hemangiomas affect the 75% of patients and may arise on the oral mucosa or perioral cutaneous regions. In this study we treated 26 Intraoral Haemangiomas (IH) and 15 Perioral Haemangiomas (PH) with diode laser photocoagulation using a laser of 800+/-10nm of wavelength. For IH treatment an optical fiber of 320 μm was used, and the laser power was set ted at 4 W (t-on 200 ms / t-off 400ms; fluence: 995 J/cm2). For PH treatment an optical fiber of 400 μm at the power of 5 W was used (t-on 100 ms / t-off 300 ms; fluence: 398 J/cm2). IH healed after one session (31%), the other (69%) after two sessions of Laser therapy. In each session, only a limited area of the PH was treated, obtaining a progressive improvement of the lesion. Diode laser photocoagulation is an effective option of treatment for IH and PH in patients affected by PHACE because of its minimal invasiveness. Moreover laser photocoagulation doesn't have side effects and can be performed repeatedly without cumulative toxicity. Nevertheless, more studies are required to evaluate the effectiveness of the therapy in mid and long time period.

  16. 980nm diode laser pump modules operating at high temperature

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Leisher, Paul; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2016-03-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. This problem is being addressed by the team formed by Freedom Photonics and Teledyne Scientific through the development of novel high power laser chip array architectures that can operate with high efficiency when cooled with coolants at temperatures higher than 50 degrees Celsius and also the development of an advanced thermal management system for efficient heat extraction from the laser chip array. This paper will present experimental results for the optical, electrical and thermal characteristics of 980 nm diode laser pump modules operating effectively with liquid coolant at temperatures above 50 degrees Celsius, showing a very small change in performance as the operating temperature increases from 20 to 50 degrees Celsius. These pump modules can achieve output power of many Watts per array lasing element with an operating Wall-Plug-Efficiency (WPE) of >55% at elevated coolant temperatures. The paper will also discuss the technical approach that has enabled this high level of pump module performance and opportunities for further improvement.

  17. Transverse mode selection in a monolithic microchip laser

    CSIR Research Space (South Africa)

    Naidoo, Darryl

    2011-11-01

    Full Text Available The article outlines an approach to mode selection in a microchip laser through judicious shaping of the pump light to create a high modal overlap with the desired mode. The authors demonstrate the principle by creating a donut-shaped pump profile...

  18. V-shaped resonators for addition of broad-area laser diode arrays

    Science.gov (United States)

    Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

    2012-12-25

    A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

  19. The study of laser beam riding guided system based on 980nm diode laser

    Science.gov (United States)

    Qu, Zhou; Xu, Haifeng; Sui, Xin; Yang, Kun

    2015-10-01

    With the development of science and technology, precision-strike weapons has been considered to be important for winning victory in military field. Laser guidance is a major method to execute precision-strike in modern warfare. At present, the problems of primary stage of Laser guidance has been solved with endeavors of countries. Several technical aspects of laser-beam riding guided system have been mature, such as atmosphere penetration of laser beam, clutter inhibition on ground, laser irradiator, encoding and decoding of laser beam. Further, laser beam quality, equal output power and atmospheric transmission properties are qualified for warfare situation. Riding guidance instrument is a crucial element of Laser-beam riding guided system, and is also a vital element of airborne, vehicle-mounted and individual weapon. The optical system mainly consist of sighting module and laser-beam guided module. Photoelectric detector is the most important sensing device of seeker, and also the key to acquire the coordinate information of target space. Currently, in consideration of the 1.06 u m of wavelength applied in all the semi-active laser guided weapons systems, lithium drifting silicon photodiode which is sensitive to 1.06 u m of wavelength is used in photoelectric detector. Compared to Solid and gas laser, diode laser has many merits such as small volume, simple construction, light weight, long life, low lost and easy modulation. This article introduced the composition and operating principle of Laser-beam riding guided system based on 980 nm diode laser, and made a analysis of key technology; for instance, laser irradiator, modulating disk of component, laser zooming system. Through the use of laser diode, Laser-beam riding guided system is likely to have smaller shape and very light.

  20. Tunable diode laser spectroscopy as a technique for combustion diagnostics

    Science.gov (United States)

    Bolshov, M. A.; Kuritsyn, Yu. A.; Romanovskii, Yu. V.

    2015-04-01

    Tunable diode laser absorption spectroscopy (TDLAS) has become a proven method of rapid gas diagnostics. In the present review an overview of the state of the art of TDL-based sensors and their applications for measurements of temperature, pressure, and species concentrations of gas components in harsh environments is given. In particular, the contemporary tunable diode laser systems, various methods of absorption detection (direct absorption measurements, wavelength modulation based phase sensitive detection), and relevant algorithms for data processing that improve accuracy and accelerate the diagnostics cycle are discussed in detail. The paper demonstrates how the recent developments of these methods and algorithms made it possible to extend the functionality of TDLAS in the tomographic imaging of combustion processes. Some prominent examples of applications of TDL-based sensors in a wide range of practical combustion aggregates, including scramjet engines and facilities, internal combustion engines, pulse detonation combustors, and coal gasifiers, are given in the final part of the review.

  1. High frequency modeling for quantum-well laser diodes

    Institute of Scientific and Technical Information of China (English)

    GAO JianJun

    2009-01-01

    High frequency modeling of quantum-well (OW) laser diodes for optoelectronic integrated circuit (OEIC) design is discussed in this paper. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both de and high frequency. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are ana-lyzed to obtain a physics-based high frequency model. The model is based on the physical rate equa-tions, and is versatile in that it permits both small-and large-signal simulations to be performed. Sev-eral procedures of the high frequency model parameter extraction are also discussed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers.

  2. Diode laser for excisional biopsy of peripheral ossifying fibroma

    Directory of Open Access Journals (Sweden)

    Kirti Chawla

    2014-01-01

    Full Text Available Peripheral Ossifying Fibroma is one of the commonest occurring reactive lesions on gingiva. It is associated with local irritational factors and often interferes with speech, mastication and maintenance of oral hygiene, in addition to being aesthetically unpleasant. It is usually treated with surgical excision using scalpel and removal of irritational factors, often resulting in mucogingival defect. Other modalities such as radiosurgery and electrocautery have also been used for its management, but they cause changes in microarchitecture of biopsy specimen, altering the histologic picture for true diagnosis. We are presenting a case of excisional biopsy of this lesion in an adult female using a diode laser with excellent post-operative results, without affecting microarchitecture of biopsy specimen. The patient is being followed for last 1 year and no sign of recurrence has been found. A diode laser may offer a good alternative modality for management of such cases.

  3. Use of laser diodes in cavity ring-down spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zare, R.N.; Paldus, B.A.; Ma, Y.; Xie, J. [Stanford Univ., CA (United States)

    1997-12-31

    We have demonstrated that cavity ring-down spectroscopy (CRDS), a highly sensitive absorption technique, is versatile enough to serve as a complete diagnostic for materials process control. In particular, we have used CRDS in the ultraviolet to determine the concentration profile of methyl radicals in a hot-filament diamond reactor; we have applied CRDS in the mid-infrared to detect 50 ppb of methane in a N{sub 2} environment; and, we have extended CRDS so that we can use continuous-wave diode laser sources. Using a laser diode at 810 nm, we were able to achieve a sensitivity of 2 x 10{sup -8} cm{sup -1}. Thus, CRDS can be used not only as an in situ diagnostic for investigating the chemistry of diamond film deposition, but it can also be used as a gas purity diagnostic for any chemical vapor deposition system.

  4. Optimization of beam transformation system for laser-diode bars.

    Science.gov (United States)

    Yu, Junhong; Guo, Linhui; Wu, Hualing; Wang, Zhao; Gao, Songxin; Wu, Deyong

    2016-08-22

    An optimized beam transformation system (BTS) is proposed to improve the beam quality of laser-diode bars. Through this optimized design, the deterioration of beam quality after the BTS can be significantly reduced. Both the simulation and experimental results demonstrate that the optimized system enables the beam quality of a mini-bar (9 emitters) approximately equal to 5.0 mm × 3.6 mrad in the fast-axis and slow-axis. After beam shaping by the optimized BTS, the laser-diode beam can be coupled into a 100 μm core, 0.15 numerical aperture (NA) fiber with an output power of over 100 W and an electric-optical efficiency of 46.8%.

  5. Laser diode self-mixing technique for liquid velocimetry

    Science.gov (United States)

    Alexandrova, A.; Welsch, C. P.

    2016-09-01

    Using the self-mixing technique, or optical feedback interferometry, fluid velocity measurements of water seeded with titanium dioxide have been performed using a laser diode to measure the effect of the seeding particle concentration and also the pump speed of the flow. The velocimeter utilises commercially available laser diodes with a built-in photodiode for detection of the self-mixing effect. The device has demonstrated an accuracy better than 10% for liquid flow velocities up to 1.5 m/s with a concentration of scattering particles in the range of 0.8-0.03%. This is an improvement of one order of magnitude compared to previous experiments. The proposed velocimeter is to be developed further for application in gas-jet measurements.

  6. Laser diode self-mixing technique for liquid velocimetry

    Energy Technology Data Exchange (ETDEWEB)

    Alexandrova, A., E-mail: a.alexandrova@liverpool.ac.uk [Cockcroft Institute, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); University of Liverpool, Department of Physics, Liverpool L69 7ZE (United Kingdom); Welsch, C.P. [Cockcroft Institute, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); University of Liverpool, Department of Physics, Liverpool L69 7ZE (United Kingdom)

    2016-09-11

    Using the self-mixing technique, or optical feedback interferometry, fluid velocity measurements of water seeded with titanium dioxide have been performed using a laser diode to measure the effect of the seeding particle concentration and also the pump speed of the flow. The velocimeter utilises commercially available laser diodes with a built-in photodiode for detection of the self-mixing effect. The device has demonstrated an accuracy better than 10% for liquid flow velocities up to 1.5 m/s with a concentration of scattering particles in the range of 0.8–0.03%. This is an improvement of one order of magnitude compared to previous experiments. The proposed velocimeter is to be developed further for application in gas-jet measurements.

  7. Direct mapping of local redox current density on a monolith electrode by laser scanning.

    Science.gov (United States)

    Lee, Seung-Woo; Lopez, Jeffrey; Saraf, Ravi F

    2013-09-15

    An optical method of mapping local redox reaction over a monolith electrode using simple laser scanning is described. As the optical signal is linearly proportional to the maximum redox current that is measured concomitantly by voltammetry, the optical signal quantitatively maps the local redox current density distribution. The method is demonstrated on two types of reactions: (1) a reversible reaction where the redox moieties are ionic, and (2) an irreversible reaction on two different types of enzymes immobilized on the electrode where the reaction moieties are nonionic. To demonstrate the scanning capability, the local redox behavior on a "V-shaped" electrode is studied where the local length scale and, hence, the local current density, is nonuniform. The ability to measure the current density distribution by this method will pave the way for multianalyte analysis on a monolith electrode using a standard three-electrode configuration. The method is called Scanning Electrometer for Electrical Double-layer (SEED).

  8. Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser

    Science.gov (United States)

    Coyle, Donald B.

    2008-01-01

    A four-pass optical coupler affords increased (in comparison with related prior two-pass optical couplers) utilization of light generated by a laser diode in side pumping of a solid-state laser slab. The original application for which this coupler was conceived involves a neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal slab, which, when pumped by a row of laser diodes at a wavelength of 809 nm, lases at a wavelength of 1,064 nm. Heretofore, typically, a thin laser slab has been pumped in two passes, the second pass occurring by virtue of reflection of pump light from a highly reflective thin film on the side opposite the side through which the pump light enters. In two-pass pumping, a Nd:YAG slab having a thickness of 2 mm (which is typical) absorbs about 84 percent of the 809-nm pump light power, leaving about 16 percent of the pump light power to travel back toward the laser diodes. This unused power can cause localized heating of the laser diodes, thereby reducing their lifetimes. Moreover, if the slab is thinner than 2 mm, then even more unused power travels back toward the laser diodes. The four-pass optical coupler captures most of this unused pump light and sends it back to the laser slab for two more passes. As a result, the slab absorbs more pump light, as though it were twice as thick. The gain and laser cavity beam quality of a smaller laser slab in conjunction with this optical coupler can thus be made comparable to those of a larger two-pass-pumped laser slab.

  9. Improving Lifetime of Quasi-CW Laser Diode Arrays for Pumping 2-Micron Solid State Lasers

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

    2007-01-01

    Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data on the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

  10. Diode-pumped Yb3+:KYF4 femtosecond laser.

    Science.gov (United States)

    Coluccelli, Nicola; Galzerano, Gianluca; Tonelli, Mauro; Laporta, Paolo; Svelto, Orazio

    2008-05-15

    Passive mode locking of a diode-pumped Yb(3+):KYF(4) laser is demonstrated using a semiconductor saturable absorber mirror. A high-stability, transform-limited pulse train with a repetition rate of 57 MHz is generated. Solitonlike pulses with maximum average output power of 250 mW, minimum pulse duration of 170 fs, and rms time jitter of 360 fs were obtained.

  11. Excision of Mucocele Using Diode Laser in Lower Lip

    Science.gov (United States)

    Ramkumar, Subramaniam; Ramkumar, Lakshmi; Malathi, Narasimhan

    2016-01-01

    Mucoceles are nonneoplastic cystic lesions of major and minor salivary glands which result from the accumulation of mucus. These lesions are most commonly seen in children. Though usually these lesions can be treated by local surgical excision, in our case, to avoid intraoperative surgical complications like bleeding and edema and to enable better healing, excision was done using a diode laser in the wavelength of 940 nm. PMID:28097026

  12. Superluminescent diode and single mode laser

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, S.K.; Lau, K.Y.; Bar-Chaim, N.; Ury, I.

    1988-08-16

    A buried heterostructure superluminescent diode comprising: an elongated active gain layer having an output end and a non-output end; a first n-type cladding layer on one face of the gain layer and a second p-type cladding layer on the other face of the gain layer for pumping the active gain layer, the cladding layer having a lower index of refraction than the active gain layer; a blocking layer having a lower index of refraction than the active gain layer along each longitudinal edge of the active gain layer, a transparent window at the output end of the active gain layer; an antireflective coating on the window layer; and a light absorbing medium at the non-output end of the active gain layer.

  13. Active coherent beam combining of diode lasers.

    Science.gov (United States)

    Redmond, Shawn M; Creedon, Kevin J; Kansky, Jan E; Augst, Steven J; Missaggia, Leo J; Connors, Michael K; Huang, Robin K; Chann, Bien; Fan, Tso Yee; Turner, George W; Sanchez-Rubio, Antonio

    2011-03-15

    We have demonstrated active coherent beam combination (CBC) of up to 218 semiconductor amplifiers with 38.5 W cw output using up to eleven one-dimensional 21-element individually addressable diode amplifier arrays operating at 960 nm. The amplifier array elements are slab-coupled-optical-waveguide semiconductor amplifiers (SCOWAs) set up in a master-oscillator-power-amplifier configuration. Diffractive optical elements divide the master-oscillator beam to seed multiple arrays of SCOWAs. A SCOWA was phase actuated by adjusting the drive current to each element and controlled using a stochastic-parallel-gradient-descent (SPGD) algorithm for the active CBC. The SPGD is a hill-climbing algorithm that maximizes on-axis intensity in the far field, providing phase locking without needing a reference beam.

  14. Encapsulated and monolithic resonant structures for laser applications

    Science.gov (United States)

    Pung, Aaron Joseph

    Typically, the composition of a laser system includes a gain medium, a pump illumination source, and an external feedback cavity. This cavity consists of a highly reflective mirror and an outcoupler component. The geometry of the outcoupler can be engineered to tailor the reflected or transmitted beam's spatial and spectral distribution. Functionally, the transmitted beam profile is dependent on the laser application. Broadband reflection profiles can be obtained by utilizing a distributed Bragg reflector (DBR). A DBR device consists of multiple layers of alternating materials. Constructive interference of the reflected light off each interface between different materials produces the spectrally broadband response. The spectral response is a function of the fabrication and material parameters of the DBR. In contrast, guided-mode resonance filters (GMRF) exploit phase matching between evanescent- and guided-waves to provide a strong reflection. Based on the materials in the structure, the spectral response can demonstrate broadband or narrowband reflectivity. The operation wavelength of a GMRF is dependent on the structural parameters of the device as well as the angle of incidence. However, conventional designs of resonant optics leave critical aspects of the structure exposed to the surrounding environment. Additional damage or contamination to the waveguide or grating layer will significantly alter the device's spectral response. This dissertation introduces two GMRF geometries aimed at device integration, development of similar-material resonant devices, and full-device protection from outside influence. Unlike distributed Bragg reflectors, these geometries do not rely heavily on strict material and deposition requirements. Instead, they take advantage of the deposition processes to minimize coating deposition, achieve high reflectivity and demonstrate control over polarization dependence. Given their versatility in design and ability to withstand high power

  15. Diode pumped erbium cascade fiber lasers

    NARCIS (Netherlands)

    Jackson, Stuart D.; Pollnau, Markus; Li, Jianfeng

    Cascading the 4I11/2 -> 4I13/2 transition at 2.8 μm and 4I13/2 -> 4I15/2 transition at 1.6 μm offers a solution to the thermal management of high power Er3+-doped fluoride fiber lasers. We demonstrate an output power of 8.2 W at 2.8 μm from an Er3+-doped fluorozirconate fiber laser with 56 W of

  16. [Diode laser surgery in the endoscopic treatment of laryngeal paralysis].

    Science.gov (United States)

    Ferri, E; García Purriños, F J

    2006-01-01

    Several surgical procedures have been proposed for the treatment of respiratory distress secondary to bilateral vocal cord paralysis. The aim of all surgical techniques used is to restore a glottic lumen sufficient to guarantee adequate breathing through the natural airway, without tracheotomy and preserving an acceptable phonatory quality. In this study we present our experience from 1998 to 2004 concerning the use of the diode contact laser for a modified Dennis-Kashima posterior endoscopic cordectomy (extended to the false homolateral chord in 3 cases and to the homolateral arytenoid vocal process in 6 cases). 18 patients (15 male, 3 female) were treated; the age range was 35-84 years. The etiology of paralysis varied: iatrogenic post-thyroidectomy and post-thoracic surgery in 5 cases (28%), post-traumatic in 2 cases (11%), secondary to a central lesion in 11 (61%). The operation was carried out with a diode contact laser (60W; 810 nm). Follow-up was 20 months. Dyspnea improved in all patients; the 9 tracheostomized patients were decannulated within 2 months after surgery. Final voice quality was subjectively good in 16 patients (88%). None of patients had any complications after surgery. In conclusion, the endoscopic posterior cordectomy performed by contact diode laser is an effective and reliable method for the treatment of dyspnea secondary to bilateral laryngeal paralysis, guaranteing a sufficient airway without impairing swallowing and maintaining acceptable voice quality.

  17. Wave optics simulation of diode pumped alkali laser (DPAL)

    Science.gov (United States)

    Endo, Masamori; Nagaoka, Ryuji; Nagaoka, Hiroki; Nagai, Toru; Wani, Fumio

    2016-03-01

    A numerical simulation code for a diode pumped alkali laser (DPAL) was developed. The code employs the Fresnel- Kirchhoff diffraction integral for both laser mode and pump light propagations. A three-dimensional rate equation set was developed to determine the local gain. The spectral divergence of the pump beam was represented by a series of monochromatic beams with different wavelengths. The calculated results showed an excellent agreements with relevant experimental results. It was found that the main channel of the pump power drain is the spontaneous emission from the upper level of the lasing transition.

  18. GaSbBi/GaSb quantum well laser diodes

    Science.gov (United States)

    Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

    2017-05-01

    We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

  19. [Tunable diode laser absorption spectroscopy system for trace ethylene detection].

    Science.gov (United States)

    Pan, Wei-Dong; Zhang, Jia-Wei; Dai, Jing-Min; Song, Kai

    2012-10-01

    Tunable diode laser absorption spectroscopy (TDLAS) was characterized by ultra-narrow line width laser and wavelength modulation, which makes it possible to scan a single absorption line. TDLAS has an advantage in trace gas analysis for its high resolution, high sensitivity and quick response. The 1 626.8 nm absorption line of ethylene was selected for detecting by analyzing its absorption line characteristic. The TDLAS system was developed with a white type multi-pass cell, combined with wavelength modulation and harmonic detection. Ethylene concentration ranges from 20 to 1 200 ppmv were tested using this system. The estimated detection limit of the system is 10 ppmv.

  20. External cavity diode laser with very-low frequency drift

    Science.gov (United States)

    Takamizawa, Akifumi; Yanagimachi, Shinya; Ikegami, Takeshi

    2016-03-01

    An external cavity diode laser with significant mechanical robustness was installed in a housing that was sealed from outside for eliminating variations in the refractive index of air. Using the feedback signal for a frequency lock, it was found that the variation in the laser frequency under free running was suppressed to 275 MHz over one month and depended on the room temperature. Moreover, the upper limit of the linear frequency drift rate was evaluated as intrinsically 40 Hz/s. The frequency lock is expected to be sustainable for more than 110 days with temperature-controlled housing.

  1. Effect of different diode laser powers in photodynamic therapy

    CSIR Research Space (South Africa)

    Maduray, K

    2010-09-01

    Full Text Available (PDT) is a treatment for cancer which requires an interaction between a photosensitizer (PS; drug or dye) and light (laser) of an appropriate wavelength in the presence of tissue molecular oxygen, to produce reactive oxygen species for the destruction... of cancer cells [1]. For PDT to be considered as an effective cancer treatment it should be able to cause the destruction of cancer cells with minimum damage to healthy normal cells. The efficacy of PDT using AlTSPc and ZnTSPc activated with a diode laser...

  2. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  3. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  4. Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2010-01-01

    High power diode lasers are used in a large number of applications. A limiting factor for more widespread use of broad area lasers is the poor beam quality. Gain guided tapered diode lasers are ideal candidates for industrial applications that demands watt level output power with good beam quality...

  5. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  6. 785-nm dual wavelength DBR diode lasers and MOPA systems with output powers up to 750 mW

    Science.gov (United States)

    Sumpf, Bernd; Maiwald, Martin; Klehr, Andreas; Müller, André; Bugge, Frank; Fricke, Jörg; Ressel, Peter; Erbert, Götz; Tränkle, Günther

    2015-03-01

    Raman lines are often superimposed by daylight, artificial light sources or fluorescence signals from the samples under study. Shifted excitation Raman difference spectroscopy (SERDS), i.e. exciting the sample alternatingly with two slightly shifted wavelengths, allows to distinguish between the Raman lines and sources of interference. In this work, monolithic dual wavelength Y-branch DBR ridge waveguide diode lasers and their application in master oscillator power amplifier (MOPA) systems at 785 nm suitable for Raman spectroscopy and SERDS will be presented. The definition of the wavelengths is made by implementing deeply-etched 10th order 500 μm long surface gratings with different periods using i-line wafer stepper lithography. Y-branch DBR lasers with a total length of 3 mm and a stripe width of 2.2 μm were manufactured and characterized. The monolithic devices reach output powers up to 215 mW with emission widths of about 20 pm. At 200 mW the conversion efficiency is 20%, i.e. the electrical power consumption is only 1 W. The spectral distance between the two laser cavities is about 0.6 nm, i.e. 10 cm-1 as targeted. The side mode suppression ratio is better than 50 dB. Amplifying these devices using a ridge waveguide amplifier an output power of about 750 mW could be achieved maintaining the spectral properties of the master oscillator.

  7. Transient transfection of mammalian cells using a violet diode laser

    Science.gov (United States)

    Torres-Mapa, Maria Leilani; Angus, Liselotte; Ploschner, Martin; Dholakia, Kishan; Gunn-Moore, Frank J.

    2010-07-01

    We demonstrate the first use of the violet diode laser for transient mammalian cell transfection. In contrast to previous studies, which showed the generation of stable cell lines over a few weeks, we develop a methodology to transiently transfect cells with an efficiency of up to ~40%. Chinese hamster ovary (CHO-K1) and human embryonic kidney (HEK293) cells are exposed to a tightly focused 405-nm laser in the presence of plasmid DNA encoding for a mitochondrial targeted red fluorescent protein. We report transfection efficiencies as a function of laser power and exposure time for our system. We also show, for the first time, that a continuous wave laser source can be successfully applied to selective gene silencing experiments using small interfering RNA. This work is a major step towards an inexpensive and portable phototransfection system.

  8. Diode Laser Assisted Filament Winding of Thermoplastic Matrix Composites

    Directory of Open Access Journals (Sweden)

    Claudia Prosperi

    2010-01-01

    Full Text Available A new consolidation method for the laser-assisted filament winding of thermoplastic prepregs is discussed: for the first time a diode laser is used, as well as long glass fiber reinforced polypropylene prepregs. A consolidation apparatus was built by means of a CNC motion table, a stepper motor and a simple tensioner. Preliminary tests were performed in a hoop winding configuration: only the winding speed was changed, and all the other process parameters (laser power, distance from the laser focus, consolidation force were kept constant. Small wound rings with an internal diameter of 25 mm were produced and compression tests were carried out to evaluate the composite agglomeration in dependence of the winding speed. At lower winding speeds, a stronginterpenetration of adjacent layers was observed.

  9. Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser.

    Science.gov (United States)

    Cozijn, F M J; Biesheuvel, J; Flores, A S; Ubachs, W; Blume, G; Wicht, A; Paschke, K; Erbert, G; Koelemeij, J C J

    2013-07-01

    We demonstrate laser cooling of trapped beryllium ions at 313 nm using a frequency-doubled extended cavity diode laser operated at 626 nm, obtained by cooling a ridge waveguide diode laser chip to -31°C. Up to 32 mW of narrowband 626 nm laser radiation is obtained. After passage through an optical isolator and beam shaping optics, 14 mW of 626 nm power remains of which 70% is coupled into an external enhancement cavity containing a nonlinear crystal for second-harmonic generation. We produce up to 35 μW of 313 nm radiation, which is subsequently used to laser cool and detect 6×10(2) beryllium ions, stored in a linear Paul trap, to a temperature of about 10 mK, as evidenced by the formation of Coulomb crystals. Our setup offers a simple and affordable alternative for Doppler cooling, optical pumping, and detection to presently used laser systems.

  10. Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes

    Science.gov (United States)

    Kuo, Yen-Kuang; Chang, Jih-Yuan; Chen, Mei-Ling

    2010-02-01

    A high energy bandgap electron blocking layer (EBL) just behind the active region is conventionally used in the nitride-based laser diodes (LDs) and light-emitting diodes (LEDs) to improve the confinement capability of electrons within the quantum wells. Nevertheless, the EBL may also act as a potential barrier for the holes and cause non-uniform distribution of holes among quantum wells. A most recent study by Han et al. (Appl. Phys. Lett. 94, 231123, 2009) reported that, because of the blocking effect for holes, the InGaN LED device without an EBL has slighter efficiency droop and higher light output at high level of current injection when compared with the LED device with an EBL. This result seems to contradict with the original intention of using the EBL. Furthermore, findings from our previous studies (IEEE J. Lightwave Technol. 26, 329, 2008; J. Appl. Phys. 103, 103115, 2008; Appl. Phys. Lett. 91, 201118, 2007) indicated that the utilization of EBL is essential for the InGaN laser diodes. Thus, in this work, the optical properties of the InGaN LDs and LEDs are explored numerically with the LASTIP simulation program and APSYS simulation program, respectively. The analyses focus particularly on the light output power, energy band diagrams, recombination rates, distribution of electrons and holes in the active region, and electron overflow. This study will then conclude with a discussion of the effect of EBL on the optical properties of the InGaN LDs and LEDs.

  11. Investigating a Hypothetical Semiconductor Laser Bar Using a Laser Diode Simulation/Emulation Tool Using Random Levels of Defects

    Directory of Open Access Journals (Sweden)

    C.K. Amuzuvi

    2014-02-01

    Full Text Available In this study, Barlase, a semiconductor laser diode emulation tool, is used to emulate the by-emitter degradation of high power semiconductor laser diodes. Barlase is a software that uses a LabView control interface. We have demonstrated how Barlase works using a hypothetical laser diode bar (multiple emitters to validate the usefulness of the tool. A scenario using the hypothetical bar was investigated to demonstrate Barlase as follows: random low-level of defects distributed across the bar. The results of the simulation show the successful implementation of Barlase in the by-emitter analysis of laser diodes.

  12. High repetition rate femtosecond dye amplifier using a laser diode pumped neodymium:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Zysset, B.; LaGasse, M.J.; Fujimoto, J.G.; Kafka, J.D.

    1989-02-06

    A high repetition rate femtosecond dye amplifier is demonstrated using a laser diode pumped Q-switched Nd:YAG laser. Amplification of wavelength tunable 300 fs pulses from a synchronously mode-locked rhodamine dye laser is achieved with a saturated gain of 70 and a small gain of 200 at a repetition rate of 800 Hz. Maximum pulse energies of 40 nJ are obtained, and pulse compression to as short as 30 fs is demonstrated.

  13. High repetition rate femtosecond dye amplifier using a laser diode pumped neodymium:YAG laser

    Science.gov (United States)

    Zysset, B.; LaGasse, M. J.; Fujimoto, J. G.; Kafka, J. D.

    1989-02-01

    A high repetition rate femtosecond dye amplifier is demonstrated using a laser diode pumped Q-switched Nd:YAG laser. Amplification of wavelength tunable 300 fs pulses from a synchronously mode-locked rhodamine dye laser is achieved with a saturated gain of 70 and a small gain of 200 at a repetition rate of 800 Hz. Maximum pulse energies of 40 nJ are obtained, and pulse compression to as short as 30 fs is demonstrated.

  14. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured...... thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources....

  15. Quasi-CW Diode Laser End-pumped Yb3+∶GlassMicrochip Laser

    Institute of Scientific and Technical Information of China (English)

    DAI Shixun; HU Lili; LIU Zhuping; HUANG Guosong; JIANG Zhonghong; YASUKAZU Izawa

    2002-01-01

    Quasi-CW diode-pumped Yb3+∶borate glass and Yb3+∶phosphate glass microchip lasers have been reported. From Yb3+∶phosphate glass laser, the maximum average output power was 31 mW and the optical-optical conversion efficiency was 5%.The maximum average output power was 18 mW, and optical-optical conversion efficiency was 3% for Yb3+∶borate glass laser.

  16. Micropulse diode laser trabeculoplasty in Nigerian patients

    Directory of Open Access Journals (Sweden)

    Babalola OE

    2015-07-01

    Full Text Available Olufemi Emmanuel Babalola1,2 1Rachel Eye Center, Abuja, Nigeria; 2Department of Ophthalmology, College of Health Sciences, Bingham University, New Karu, Nigeria Introduction: The term micropulse laser trabeculoplasty suggests that only a fraction of the laser power is applied to the trabeculum to effect pressure lowering. It has not yet been exclusively used in Negroes, and we wish to report on our experience in Nigerian patients.Methods: The study design is a retrospective chart review of our patients at the Rachel Eye Center in Abuja. The 810 diode Optos FastPulse laser was used to apply 34 cycles of treatment to 30 eyes of 16 individuals. Patients were selected based on the failure of maximal medical therapy. One patient had two extra rounds of treatment, while two patients were treated in only one eye. The pressure change at 1 hour after the treatment was analyzed. Patients were followed up for a mean period of 160 days with continuous monitoring of pressure changes. Patients’ original therapy was not disturbed.Results: Postlaser immediate drop in intraocular pressure (IOP averaged 3.2 mmHg (CI 1.6–4.7, P<0.0001 representing 17.2% drop from baseline prelaser IOP. The drop in IOP was sustained over varying periods, from a few weeks to several months. There was a temporary spike in three instances. No serious side effects were noted.Conclusion: Micropulse diode laser trabeculoplasty is a useful adjunct in the management of open-angle glaucoma in Nigerians. This corroborates the findings of other researchers in western populations. Keywords: micropulse, diode laser, Nigeria, glaucoma

  17. The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

    Science.gov (United States)

    Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

    2016-06-01

    The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth.

  18. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  19. Novel high peak current pulsed diode laser sources for direct material processing

    Science.gov (United States)

    Traub, M.; Bock, M.; Hoffmann, H.-D.; Bartram, M.

    2007-02-01

    Diode laser systems are well established for applications which demand high continuous wave (cw) power. These applications are material processing like cutting and welding of metals as well as polymers where diode laser systems are less expensive and more compact than solid state lasers. Even though the optical output power and the beam quality of diode lasers are increasing steadily, the use of these sources is generally limited to cw applications. For processes during which ablating of material is demanded, however, conventional diode lasers are inferior compared to pulsed solid state lasers as diode lasers suffer from the absence of optical intracavity q-switching. Some examples of these applications are coating removal and marking. To overcome this drawback, we have developed several diode laser systems that use high peak-current drivers and thereby allow to operate the diode lasers at currents up to 500 A. The pulse source was tested with fiber coupled single emitters, conventional diode lasers and customized AR-coated diode laser bars. With the new diode laser driver, a peak output power of 250 W can be achieved with pulse durations of approx. 100 ns. Polarization coupling of two bars increases the power by a factor of two. Thereby an output power of 500 W can be demonstrated. These systems reach an intensity of 27 MW/cm2 per diode laser bar which is sufficient for ablating processes. We will demonstrate the design of the prototype system as well as results of marking and coating removal experiments with the system.

  20. Direct diode lasers and their advantages for materials processing and other applications

    Science.gov (United States)

    Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

    2015-03-01

    The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

  1. Sampled grating tunable twin-guide laser diodes with wide tuning range (40 nm) and large output power (10 mW)

    Science.gov (United States)

    Todt, R.; Jacke, T.; Meyer, R.; Adler, J.; Laroy, R.; Morthier, G.; Amann, M.-C.

    2006-03-01

    The sampled grating tunable twin-guide (SG-TTG) laser diode is a DFB-like tunable laser that employs Vernier-effect tuning to achieve wide wavelength tuning. In contrast to most other monolithic widely tunable lasers (which are usually DBR-type lasers), a phase tuning section is not needed and, hence, the SG-TTG laser requires at least one tuning current less than comparable devices.The devices provide full wavelength coverage over a 40 nm-broad tuning range that is centered at 1.54 μm. Its tuning behavior is quasi-continuous with up to 8.2 nm broad continuous tuning regions. High side-mode suppression (SMSR 35 dB) as well as large output power (P 10 mW) are obtained over the whole wavelength range from 1520.5 to 1561.5 nm.

  2. Thermal Analysis of Heat-Assisted Magnetic Recording Optical Head with Laser Diode on Slider

    Science.gov (United States)

    Xu, Baoxi; Chia, Cheow Wee; Zhang, Qide; Teck Toh, Yeow; An, Chengwu; Vienne, Guillaume

    2011-09-01

    For the optical head used in heat-assisted magnetic recording (HAMR), mounting a laser diode chip on the slider offers a more integrated, compact, and stable design. However, the heat generated by the laser diode will cause the head temperature to increase, which may decrease the laser output power and change the slider flying status. In this paper, the thermal analysis of the HAMR head including the laser diode and a transducer is conducted. The effects of the laser diode power, the power absorbed by the transducer, boundary thermal resistance between the laser diode chip and the slider substrate, and slider fly speed and fly height on the laser temperature increase, the transducer temperature increase, and the air-bearing surface temperature distribution are studied. The deformation of the air-bearing surface caused by its temperature change is also analyzed.

  3. Component validation of direct diode 488nm lasers in BD Accuri C6 flow cytometers

    Science.gov (United States)

    Chen, Wei P.; Luo, Ningyi D.

    2016-03-01

    The 488nm laser is the most important excitation light source of flow cytometry. The indirect diode (frequency-doubled diode) 488nm lasers are used in the excitation of Becton Dickinson (BD) AccuriTM C6. For using cost effective lasers, we have validated direct diode 488nm lasers as the replacement component of frequency-doubled diode laser. BD Bioscience issued the protocols to cover wavelength, power, noise, and polarization at the operation temperature range of cytometer. Pavilion Integration Corporation (PIC) tested 6 samples as the component validation of direct diode 488nm lasers based on the protocols from BD Biosciences. BD Bioscience also tested one of laser samples to further validate the test results of power, noise, and polarization from PIC.

  4. Application of Diode Laser in the Treatment of Dentine Hypersensitivity

    Science.gov (United States)

    Gojkov-Vukelic, Mirjana; Hadzic, Sanja; Zukanovic, Amila; Pasic, Enes; Pavlic, Veriva

    2016-01-01

    Introduction: Dentine hypersensitivity is characterized by acute, sharp pain arising from the exposed dentine, most commonly in response to thermal, tactile, or chemical stimuli, and which cannot be linked to any other pathological changes in the tooth or the environment. Therapy uses various impregnating agents in the form of solutions or gels and, in more recent times, laser. Aim: The aim of this research was to examine the effects of treatment of hypersensitive dental cervix with diode laser. Materials and Methods: The study included 18 patients with 82 sensitive teeth. The degree of dentine hypersensitivity was evaluated by visual analogue scale (VAS), and the treatment was carried out by application of low-power diode laser over the span of three visits, which depended on the initial sensitivity. Results: There is a significant difference in VAS values measured at the onset of treatment (baseline) and immediately after the first laser treatment (t=9.275; p=0.000), after 7 days, after the second laser treatment (14 days) (t=7.085, p=0.000), as well as after 14 days and the third laser treatment (t=5.517, p=0.000), which confirms the effectiveness of this therapeutic procedure. The results showed a reduction of hypersensitivity in response to tactile stimulus with a probe after the third treatment, even with teeth whose value on the VAS was very high at the beginning of treatment (baseline). Conclusion: Within the scope of the conducted study, laser therapy has provided extremely safe and effective results in the treatment of cervical dentine hypersensitivity.

  5. Diode-pumped all-solid-state lasers and applications

    CERN Document Server

    Parsons-Karavassilis, D

    2002-01-01

    This thesis describes research carried out by the within the Physics Department at Imperial College that was aimed at developing novel all-solid-state laser sources and investigating potential applications of this technology. A description of the development, characterisation and application of a microjoule energy level, diode-pumped all-solid-state Cr:LiSGAF femtosecond oscillator and regenerative amplifier system is presented. The femtosecond oscillator was pumped by two commercially available laser diodes and produced an approx 80 MHz pulse train of variable pulse duration with approx 30 mW average output power and a tuning range of over approx 60 nm. This laser oscillator was used to seed a regenerative amplifier, resulting in adjustable repetition rate (single pulse to 20 kHz) approx 1 mu J picosecond pulses. These pulses were compressed to approx 150 fs using a double-pass twin-grating compressor. The amplifier's performance was investigated with respect to two different laser crystals and different pul...

  6. A 1.55-μm laser array monolithically integrated with an MMI combiner

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Zhu Hongliang; Liang Song; Wang Baojun; Zhang Can; Zhao Lingjuan; Bian Jing

    2013-01-01

    The monolithic integration of four 1.55-μm range InGaAsP/InP distributed feedback lasers with a 4 × 1multimode-interference (MMI) optical combiner using the varied width ridge method is proposed and demonstrated.The average output power is 1.5 mW when the current of LD is 100 mA and the threshold current is 30-35 mA at 25 ℃.The lasing wavelength is 1.55-μm range and 40 dB sidemode suppression ratio is obtained.The four channels can operate separately or simultaneously.

  7. Perovskite Materials for Light-Emitting Diodes and Lasers.

    Science.gov (United States)

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.

  8. Flatness-based pre-compensation of laser diodes

    CERN Document Server

    Rouchon, A Abichou S Elasmi P

    2007-01-01

    A physical nonlinear dynamical model of a laser diode is considered. We propose a feed-forward control scheme based on differential flatness for the design of input-current modulations to compensate diode distortions. The goal is to transform without distortion a radio-frequency current modulation into a light modulation leaving the laser-diode and entering an optic fiber. We prove that standard physical dynamical models based on dynamical electron and photons balance are flat systems when the current is considered as control input, the flat output being the photon number (proportional to the light power). We prove that input-current is an affine map of the flat output, its logarithm and their time-derivatives up to order two. When the flat output is an almost harmonic signal with slowly varying amplitude and phase, these derivatives admit precise analytic approximations. It is then possible to design simple analogue electronic circuits to code approximations of the nonlinear computations required by our flat...

  9. Narrow line diode laser stacks for DPAL pumping

    Science.gov (United States)

    Koenning, Tobias; Irwin, David; Stapleton, Dean; Pandey, Rajiv; Guiney, Tina; Patterson, Steve

    2014-02-01

    Diode pumped alkali metal vapor lasers (DPALs) offer the promise of scalability to very high average power levels while maintaining excellent beam quality, making them an attractive candidate for future defense applications. A variety of gain media are used and each requires a different pump wavelength: near 852nm for cesium, 780nm for rubidium, 766nm for potassium, and 670nm for lithium atoms. The biggest challenge in pumping these materials efficiently is the narrow gain media absorption band of approximately 0.01nm. Typical high power diode lasers achieve spectral widths around 3nm (FWHM) in the near infrared spectrum. With state of the art locking techniques, either internal to the cavity or externally mounted gratings, the spectral width can typically be reduced to 0.5nm to 1nm for kW-class, high power stacks. More narrow spectral width has been achieved at lower power levels. The diode's inherent wavelength drift over operating temperature and output power is largely, but not completely, eliminated. However, standard locking techniques cannot achieve the required accuracy on the location of the spectral output or the spectral width for efficient DPAL pumping. Actively cooled diode laser stacks with continuous wave output power of up to 100W per 10mm bar at 780nm optimized for rubidium pumping will be presented. Custom designed external volume holographic gratings (VHGs) in conjunction with optimized chip material are used to narrow and stabilize the optical spectrum. Temperature tuning on a per-bar-level is used to overlap up to fifteen individual bar spectra into one narrow peak. At the same time, this tuning capability can be used to adjust the pump wavelength to match the absorption band of the active medium. A spectral width of <0.1nm for the entire stack is achieved at <1kW optical output power. Tuning of the peak wavelength is demonstrated for up to 0.15nm. The technology can easily be adapted to other diode laser wavelengths to pump different materials.

  10. Real-time power measurement and control for high power diode laser

    Science.gov (United States)

    Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Wang, Zhi-yong

    2011-06-01

    As the continual improvement of technology and beam quality, diode laser, with poor beam quality, no longer just apply to pump solid-state laser. As a kind of implement of laser materials processing, high-power diode laser has been used in manufacture, as a brand new means of laser processing. Due to the influence of inevitable unstable factors, for example, the temperature of water-cooler, the current of power supply, etc, the output power of diode laser will be unstable. And laser output power, as an important parameter, frequently affects the performance of the laser beam and the experimental results of processing, especially in the laser materials processing. Therefore, researching the real-time power measurement and control of high power diode laser has great significance, and for diode laser, it would improve performance of itself. To achieve the purpose of real-time detection, traditional measuring method, placing a power sensor behind the total-reflection mirror of laser resonant cavity, is mainly applied in the system of gas laser and solid-state laser. However, Owing to the high integration level of diode laser, traditional measuring method can't be adopted. A technique for real-time measure output power of high power diode laser is developed to improve quality of the laser in this paper. A lens placed at an angle of 45° in the system was used to sample output light of laser, and a piece of ground glass was used to uniform the beam power density, then the photoelectric detector received an optic signal and converted it into electric signal. This feeble signal was processed by amplification circuit with a filter. Finally, this detected electric signal was applied to accomplish the closed-loop control of power. The performance of power measurement and control system was tested with the 300W diode laser, and the measuring inaccuracy achieved was less than +/-1%.

  11. Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

    Science.gov (United States)

    Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

    2014-04-01

    The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser.

  12. Development of 100W class blue direct diode laser coating system for laser metal deposition

    Science.gov (United States)

    Higashino, R.; Tsukamoto, M.; Sato, Y.; Abe, N.; Asano, K.; Funada, Y.

    2017-02-01

    Laser cladding technique is widely used for industrial application such as oil, energy industry, and aircraft and so on because it is able to repair and to form a near net shape. This process have been employed infrared lasers with wavelength of 0.8-10.6μm since output power of these lasers have over 1000W. Metal processing efficiency was, however, low in these wavelength, because the absorption was low. Thus, we developed the laser cladding system with blue direct diode laser at the wavelength of 445nm. 6 blue diode lasers was combined on the focusing spot to reach the output power of 100W by a lens, which one blue diode laser module was maximum output power of 20W. By using this laser cladding system, a pure copper film coating on a SUS304 stainless steel plate was demonstrated from a copper powder. As the result, the copper layer was formed on SUS304 stainless steel plate at the width of 322μm and thickness of 534μm was formed on the substrate.

  13. Numerical simulations of a diode laser BPH treatment system

    Energy Technology Data Exchange (ETDEWEB)

    Esch, V; London, R A; Papademetriou, S

    1999-02-23

    Numerical simulations are presented of the laser-tissue interaction of a diode laser system for treating benign prostate hyperplasia. The numerical model includes laser light transport, heat transport, cooling due to blood perfusion, thermal tissue damage, and enthalpy of tissue damage. Comparisons of the simulation results to clinical data are given. We report that a reasonable variation from a standard set of input data produces heating times which match those measured in the clinical trials. A general trend of decreasing damage volume with increasing heating time is described. We suggest that the patient-to- patient variability seen in the data can be explained by differences in fundamental biophysical properties such as the optical coefficients. Further work is identified, including the measurement and input to the model of several specific data parameters such as optical coefficients, blood perfusion cooling rate, and coagulation rates.

  14. Tunable external cavity laser employing uncooled superluminescent diode.

    Science.gov (United States)

    Oh, Su Hwan; Kim, Ki Soo; Ju, Jung Jin; Kim, Min-Su; Yoon, Ki-Hong; Oh, Dae Kon; Noh, Young-Ouk; Lee, Hyung-Jong

    2009-06-08

    We have fabricated a tunable external cavity laser (T-ECL) based on a superluminescent diode and a polymeric waveguide Bragg reflector, providing a cost-effective solution for wavelength division multiplexing-passive optical network (WDM-PON) systems. The wavelength of the T-ECL is tuned through 100 GHz-spacing 16 channels by the thermo-optic tuning of the refractive index of the polymer waveguide at a low input power of 70 mW. The maximum output power and the slope efficiency of the uncooled diode at 20 (75) degrees C are 8.83 (3.80) mW and 0.107 (0.061) W/A, respectively. The T-ECL operated successfully in the direct modulation for 1.25 Gbit/s transmissions over 20 km.

  15. Diode-Pumped Mode-Locked LiSAF Laser

    Energy Technology Data Exchange (ETDEWEB)

    None

    1996-02-01

    Under this contract we have developed Cr{sup 3+}:LiSrAlF{sub 6} (Cr:LiSAF, LiSAF) mode-locked lasers suitable for generation of polarized electrons for CEBAF. As 670 nm is an excellent wavelength for optical pumping of Cr:LiSAF, we have used a LIGHTWAVE developed 670 nm diode pump module that combines the output of ten diode lasers and yields approximately 2 Watts of optical power. By the use of a diffraction limited pump beam however, it is possible to maintain a small mode size through the length of the crystal and hence extract more power from Cr:LiSAF laser. For this purpose we have developed a 1 Watt, red 660nm laser (LIGHTWAVE model 240R) which serves as an ideal pump for Cr:LiSAF and is a potential replacement of costly and less robust krypton laser. This new system is to compliment LIGHTWAVE Series 240, and is currently being considered for commercialization. Partially developed under this contract is LIGHTWAVEs product model 240 which has already been in our production lines for a few months and is commercially available. This laser produces 2 Watts of output at 532 nm using some of the same technology developed for production of the 660nm red system. It is a potential replacement for argon ion lasers and has better current and cooling requirements and is an excellent pump source for Ti:Al{sub 2}O{sub 3}. Also, as a direct result of this contract we now have the capability of commercially developing a mode-locked 100MHz Cr:LiSAF system. Such a laser could be added to our 100 MHz LIGHTWAVE Series 131. The Series 131 lasers provide pico second pulses and were originally developed under another DOE SBIR. Both models of LIGHTWAVE Series 240 lasers, the fiber coupled pump module and the 100MHz LiSAF laser of Series 131 have been partially developed under this contract, and are commercially competitive products.

  16. GaN-based green laser diodes

    Science.gov (United States)

    Lingrong, Jiang; Jianping, Liu; Aiqin, Tian; Yang, Cheng; Zengcheng, Li; Liqun, Zhang; Shuming, Zhang; Deyao, Li; Ikeda, M.; Hui, Yang

    2016-11-01

    Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done. Project supported by the National Key Research and Development Progress of China (Nos. 2016YFB0401803, 2016YFB0402002), the National Natural Science Foundation of China (Nos. 61574160, 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (No. XDA09020401), and the Science and Technology Support Project of Jiangsu Province (No. BE2013007).

  17. Monolithic stabilized Yb-fiber All-PM laser directly delivering nJ-level femtosecond pulses

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper

    2008-01-01

    We present a monolithic, self-starting, all-PM, stabilized Yb-fiber laser, pulse-compressed in a hollow-core PM photonic crystal fiber, providing the 370 fs pulses of 4 nJ energy with high mode quality.......We present a monolithic, self-starting, all-PM, stabilized Yb-fiber laser, pulse-compressed in a hollow-core PM photonic crystal fiber, providing the 370 fs pulses of 4 nJ energy with high mode quality....

  18. Spherical distribution structure of the semiconductor laser diode stack for pumping

    Institute of Scientific and Technical Information of China (English)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere,and the output of every bar is specially off-axis compressed to realize high coupling efficiency.The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium.The efficiency of the hollow light pipe,which is used for semiconductor laser diode stack coupling,is analyzed by geometric optics and ray tracing.Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure.Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system,and guides parameter optimization.Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency,reduce the optimum duct length and improve the output energy field distribution.

  19. Treatment of Dentine Hypersensitivity by Diode Laser: A Clinical Study

    Directory of Open Access Journals (Sweden)

    Romeo Umberto

    2012-01-01

    Full Text Available Introduction. Dentine hypersensitivity (DH is characterized by pain after stimuli that usually provoke no symptoms. This study compared the effectiveness of GaAlAs diode laser alone and with topical sodium fluoride gel (NaF. Materials and Methods. The study was conducted on 10 patients (8 F/2 M, age 25–60 and 115 teeth with DH assessed by air and tactile stimuli measured by Numeric Rating Scale (NRS. Teeth were randomly divided into G1 (34 teeth treated by 1.25% NaF; G2 (33 teeth lased at 0.5 W PW (T on 100 m and T off 100 ms, fluence 62.2 J/cm2 in defocused mode with a 320 μ fiber. Each tooth received three 1′ applications; G3 (48 teeth received NaF gel plus laser at same G2 parameters. NRS was checked at each control. Results. Significant pain reduction was showed. The NRS reduction percentages were calculated, and there was a concrete decrease of DH above all in G3 than G2 and G1. Conclusion. Diode laser is a useful device for DH treatment if used alone and mainly if used with NaF gel.

  20. Laser-diode and Flash Lamp Pumped Solid-State Lasers

    Science.gov (United States)

    Garrec, Bruno Le

    2010-04-01

    Since the early 80's, most authors are considering that to enable high-average-power operation at the highest laser efficiency, it is necessary to replace flash lamp pumped solid-state lasers with laser-diode pumped solid-state lasers. This assumption is based on the fact that diode pumping has many advantages compared to flash lamp pumping that is seen as an old technology. Although it is very difficult to get true numbers, we shall show that Diode Pumped Solid State Lasers nearby the kW level have a moderate efficiency (Flash lamp pumped fusion lasers are still in the run with a low efficiency but can access high beam quality and high harmonic generation efficiency. For the ELI project, we believe that considering a flash lamp pumped laser makes sense when the amplifier can run at 1 shot/mn to delivering 200J of green light. We shall show that it is an engineering problem to be solved with the help of: adaptive optic and large non linear crystals.

  1. High-temperature diode laser pumps for directed energy fiber lasers (Conference Presentation)

    Science.gov (United States)

    Kanskar, Manoj; Bao, Ling; Chen, Zhigang; DeVito, Mark; Dong, Weimin; Grimshaw, Mike P.; Guan, Xinguo; Hemenway, David M.; Martinsen, Robert; Zhang, Jim; Zhang, Shiguo

    2017-05-01

    Kilowatt-class fiber lasers and amplifiers are becoming increasingly important building blocks for power-scaling laser systems in various different architectures for directed energy applications. Currently, state-of-the-art Yb-doped fiber lasers operating near 1060 nm operate with optical-to-optical power-conversion efficiency of about 66%. State-of-the-art fiber-coupled pump diodes near 975 nm operate with about 50% electrical-to-fiber-coupled optical power conversion efficiency at 25C heatsink temperature. Therefore, the total system electrical-to-optical power conversion efficiency is about 33%. As a result, a 50-kW fiber laser will generate 75 kW of heat at the pump module and 25 kW at the fiber laser module with a total waste heat of 100 kW. It is evident that three times as much waste heat is generated at the pump module. While improving the efficiency of the diodes primarily reduces the input power requirement, increasing the operating temperature primarily reduces the size and weight for thermal management systems. We will discuss improvement in diode laser design, thermal resistance of the package as well as improvement in fiber-coupled optical-to-optical efficiency to achieve high efficiency at higher operating temperature. All of these factors have a far-reaching implication in terms of significantly improving the overall SWAP requirements thus enabling DEW-class fiber lasers on airborne and other platforms.

  2. High-Power, High-Efficiency 1.907nm Diode Lasers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — nLight developed high-power, high-efficiency laser diodes emitting at 1907nm for the pumping of solid-state lasers during the Phase I. The innovation brought to bear...

  3. Generation of Low Jitter Laser Diode Pulse With External Pulse Injection

    Institute of Scientific and Technical Information of China (English)

    Wang Yuncai; Olaf Reimann; Dieter Huhse; Dieter Bimberg

    2003-01-01

    One gain-switched laser diode(LD) was used as external injection seeding source, to reduce the timing jitter of another gain-switched LD, This technique can generate low jitter, frequency-free and wavelength tunable laser pulse.

  4. Optical monitoring of high power direct diode laser cladding

    Science.gov (United States)

    Liu, Shuang; Farahmand, Parisa; Kovacevic, Radovan

    2014-12-01

    Laser cladding is one of the most advanced surface modification techniques which can be used to build and repair high-value components. High power direct diode laser (HPDDL) offers unique quality and cost advantages over other lasers (CO2, Nd:YAG). Especially its rectangular laser beam with top-hat intensity distribution makes HPDDL an ideal tool for large area cladding. In order to utilize this technique successfully, the development of on-line monitoring and process control is necessary. In this study, an optical monitoring system consisting of a high-speed CCD camera, a pyrometer, and an infrared camera was used to analyze the mass- and heat-transfer in the cladding process. The particle transport in flight was viewed by a high-speed CCD camera; the interaction between powder flow and laser beam was observed by an infrared camera; and the thermal behavior of the molten pool was recorded by the pyrometer and the infrared camera. The effects of the processing parameters on the laser attenuation, particle heating and clad properties were investigated based on the obtained signals. The optical monitoring method improved the understanding about mutual interrelated phenomena in the cladding process.

  5. Challenges of high power diode-pumped lasers for fusion energy

    Institute of Scientific and Technical Information of China (English)

    Bruno; Le; Garrec

    2014-01-01

    This paper reviews the different challenges that are encountered in the delivery of high power lasers as drivers for fusion energy.We will focus on diode-pumped solid-state lasers and we will highlight some of the main recent achievements when using ytterbium,cryogenic cooling and ceramic gain media.Apart from some existing fusion facilities and some military applications of diode-pumped solid-state lasers,we will show that diode-pumped solid-state lasers are scalable to inertial fusion energy(IFE)’s facility level and that the all-fiber laser scheme is very promising.

  6. Laser Scanning of a Monolithic Column during Processing in Middle Egypt

    Science.gov (United States)

    Ajioka, O.; Hori, Y.

    2011-09-01

    From ancient quarries around Akoris in Middle Egypt, which belong to the Ptolemaic and Roman periods, the stone blocks could be carried to the working area located in the outside of the city. Those blocks included a giant monolithic column measured approximately 14m in length, which had been cracked for reasons unknown and must have contributed to disuse of monolith. The first deal is a comparison of plans drawn by the point clouds by laser scanning with those coming from plane-tabling, which had been one of popular methods for measuring in the last century. This part shows how the laser scanning technology is useful in far better measuring and documentation of the site. The second discuss is about a detailed assessment of the procedure of processing through the observation of chisel marks and the detail analysis about the 3 dimensional data. In the result, we are succeed to show the restoration of the procedure of the proceedings using guidelines and a wooden curve since we concentrate attention on the point of abstracting the centre line and shaving the surface into the round shape.

  7. Laser ignition of elastomer-modified cast double-base (EMCDB) propellant using a diode laser

    Science.gov (United States)

    Herreros, Dulcie N.; Fang, Xiao

    2017-03-01

    An experimental study was conducted to investigate laser ignition using a diode laser for elastomer-modified cast double-base (EMCDB) propellant in order to develop more liable and greener laser ignitors for direct initiation of the propellant. Samples of the propellant were ignited using a 974 nm near-infrared diode laser. Laser beam parameters including laser power, beam width and pulse width were investigated to determine their effects on the ignition performance in terms of delay time, rise time and burn time of the propellant which was arranged in several different configurations. The results have shown that the smaller beam widths, longer pulse widths and higher laser powers resulted in shorter ignition delay times and overall burn times, however, there came a point at which increasing the amount of laser energy transferred to the material resulted in no significant reduction in either delay time or overall burn time. The propellant tested responded well to laser ignition, a discovery which supports continued research into the development of laser-based propellant ignitors.

  8. Widely Tunable Monolithic Mid-Infrared Quantum Cascade Lasers Using Super-Structure Grating Reflectors

    Directory of Open Access Journals (Sweden)

    Dingkai Guo

    2016-05-01

    Full Text Available A monolithic, three-section, and widely tunable mid-infrared (mid-IR quantum cascade laser (QCL is demonstrated. This electrically tuned laser consists of a gain section placed between two super structure grating (SSG distributed Bragg reflectors (DBRs. By varying the injection currents to the two grating sections of this device, its emission wavelength can be tuned from 4.58 μm to 4.77 μm (90 cm−1 with a supermode spacing of 30 nm. This type of SSG-DBR QCLs can be a compact replacement for the external cavity QCL. It has great potential to achieve gap-free and even further tuning ranges for sensor applications.

  9. Diffraction coupled phase-locked arrays of quantum cascade lasers with monolithically integrated Talbot cavities

    CERN Document Server

    Wang, Lei; Jia, Zhi-Wei; Zhao, Yue; Liu, Chuan-Wei; Liu, Ying-Hui; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Feng-Qi; Xu, Xian-Gang

    2016-01-01

    Diffraction coupled arrays of quantum cascade laser are presented. The phase-locked behavior is achieved through monolithic integration of a Talbot cavity at one side of the laser array. The principle is based on fractional Talbot effect. By controlling length of Talbot cavity to be a quarter of Talbot distance (Zt/4), in-phase mode operation is selected. Measured far-field radiation patterns reflect stable in-phase mode operation under different injection currents, from threshold current to full power current. Diffraction-limited performance is shown from the lateral far-field, where three peaks can be obtained and main peak and side peak interval is 10.5{\\deg}. The phase-locked arrays with in-phase mode operation may be a feasible solution to get higher output power and maintain well beam quality meanwhile.

  10. Highly-stable monolithic femtosecond Yb-fiber laser system based on photonic crystal fibers

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2010-01-01

    of around 297 fs duration. Our laser shows exceptional stability. No Q-switched modelocking events were detected during 4-days long observation. An average fluctuation of only 7.85 · 10−4 over the mean output power was determined as a result of more than 6-hours long measurement. The laser is stable towards......A self-starting, passively stabilized, monolithic all polarizationmaintaining femtosecond Yb-fiber master oscillator / power amplifier with very high operational and environmental stability is demonstrated. The system is based on the use of two different photonic crystal fibers. One is used...... in the oscillator cavity for dispersion balancing and nonlinear optical limiting, and another one is used for low nonlinearity final pulse recompression. The chirped-pulse amplification and recompression of the 232-fs, 45-pJ/pulse oscillator output yields a final direct fiber-end delivery of 7.3-nJ energy pulses...

  11. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode.

    Science.gov (United States)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus; Shen, Yuxin; Vanderheiden, Sylvia; Valouch, Sebastian; Vannahme, Christoph; Bräse, Stefan; Mappes, Timo; Lemmer, Uli

    2012-03-12

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources.

  12. Progress in the development of active heat sink for high-power laser diodes

    Science.gov (United States)

    Vetrovec, John; Feeler, Ryan; Bonham, Steve

    2010-02-01

    We report on the development of a novel active heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink receives diode waste heat at high flux and transfers it at reduced flux to environment, coolant fluid, heat pipe, or structure. Thermal conductance of the heat sink is electronically adjustable, allowing for precise control of diode temperature and the output light wavelength. When pumping solid-state lasers, diode wavelength can be precisely tuned to the absorption features of the laser gain medium. This paper presents the AHS concept, scaling laws, model predictions, and data from initial testing.

  13. Asymmetrical prism for beam shaping of laser diode stacks.

    Science.gov (United States)

    Zeng, Xiaodong; Cao, Changqing; An, Yuying

    2005-09-10

    A beam-shaping scheme for a laser diode stack to obtain a flattop output intensity profile is proposed. The shaping element consists of an asymmetrical glass prism. The large divergence-angle compression in the direction perpendicular to the junction plane and the small divergence-angle expansion in the parallel direction are performed simultaneously by a single shaping element. The transformation characteristics are presented, and the optimization performance is investigated based on the ray-tracing method. Analysis shows that a flattop intensity profile can be obtained. This beam-shaping system can be fabricated easily and has a large alignment tolerance.

  14. Generation of Tunable Amplitude-Squeezed Light by Injection Locking of a Laser Diode

    Institute of Scientific and Technical Information of China (English)

    WANG Jun-Min; HE Ling-Xiang; ZHANG Tian-Cai; XIE Chang-De; PENG Kun-Chi

    2000-01-01

    Tunable amplitude squeezing around the D2 line of cesium has been experimentally accomplished at room temperature in a quantum-well laser diode with light injection from a single-mode distributed Bragg-Reflector laser diode. While the master laser frequency is tuned, amplitude squeezing of the output light from the slave laser can be maintained at about 0.9dB throughout a tunabIe range of~l.7 GHz around the cesium D2 line.

  15. Diode-laser frequency stabilization based on the resonant Faraday effect

    Science.gov (United States)

    Wanninger, P.; Valdez, E. C.; Shay, T. M.

    1992-01-01

    The authors present the results of a method for frequency stabilizing laser diodes based on the resonant Faraday effects. A Faraday cell in conjunction with a polarizer crossed with respect to the polarization of the laser diode comprises the intracavity frequency selective element. In this arrangement, a laser pull-in range of 9 A was measured, and the laser operated at a single frequency with a linewidth less than 6 MHz.

  16. GaAs/AlGaAs GRIN-SCH-SQW DBR Laser Diodes with Passive Waveguides Integrated by Compositional Disordering of the Quantum Well Using Ion Implantation

    Science.gov (United States)

    Hirata, Takaaki; Maeda, Minoru; Suehiro, Masayuki; Hosomatsu, Haruo

    1990-06-01

    GaAs/AlGaAs GRIN-SCH-SQW DBR laser diodes are fabricated by ion implantation and two-step MOVPE growth. Passive waveguides are monolithically integrated by compositional disordering of quantum well heterostructures using silicon ion implantation. Waveguide losses of partially disordered GRIN-SCH-SQW passive waveguides are measured, and propagation losses as low as 4.4 cm-1 are observed at the lasing wavelength. Stable single mode operation is obtained, and the narrowest linewidth achieved is 840 kHz. The results show that this fabrication process is useful for photonic integrated circuits.

  17. Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

    Science.gov (United States)

    Lee, Y. J.; Lin, P. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

    2007-04-01

    An InGaN-based dual-wavelength blue/green (470nm/550nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40lm/W at 20mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

  18. Investigating a Hypothetical Semiconductor Laser Bar with a Damaged Single Emitter Using a Laser Diode Simulation/Emulation Tool

    Directory of Open Access Journals (Sweden)

    C.K. Amuzuvi

    2014-02-01

    Full Text Available This study demonstrates the use of Barlase, a semiconductor laser diode emulation tool, to emulate the by-emitter degradation of high power semiconductor laser diodes.Barlase is software that uses a LabView control interface. In this study, a hypothetical laser diode bar (multiple emitters was used to investigate a damaged single emitter randomly located in the bar and its behavior analyzed within the bar. It should however, be noted that, this scenario is valid for devices at the start of the aging process only. When all other relevant effects that affect the performance of laser diodes bars are allowed to interact over time, high levels of defects can also play important role in the degradation process. The results of this simulation scenario show the successful implementation of Barlase in the by-emitter analysis of laser diodes.

  19. High-efficiency diode-pumped femtosecond Yb:YAG ceramic laser

    DEFF Research Database (Denmark)

    Zhou, Binbin; Wei, Z.Y.; Zou, Y.W.

    2010-01-01

    A highly efficient diode-end-pumped femtosecond Yb:yttrium aluminum garnet (YAG) ceramic laser was demonstrated. Pumped by a 968 nm fiber-coupled diode laser, 1.9 W mode-locked output power at a repetition rate of 64.27 MHz was obtained with 3.5 W absorbed pump power, corresponding to a slope...

  20. Isotope analysis of water by means of near-infrared dual-wavelength diode laser spectroscopy

    NARCIS (Netherlands)

    Gianfrani, L.; Gagliardi, G.; Burgel, M. van; Kerstel, E.R.Th.; Gianfrani, I.; Galgiardi, G.

    2003-01-01

    A novel diode laser spectrometer was developed using dual-wavelength multiplexing, ensuring ideal conditions for high-precision and simultaneous measurements of the H-2/H-1, O-17/O-16, and O-18/O-16 isotope ratios in water. A 1.4-mum diode laser probed a (HOH)-O-16/(HOH)-H-2 line pair near 7198

  1. QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

    Science.gov (United States)

    A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

  2. High efficient diode-pumped Tm:YAP laser at room temperature

    Institute of Scientific and Technical Information of China (English)

    Yufeng Li; Baoquan Yao; Yuezhu Wang; Youlun Ju; Guangjun Zhao; Yanhua Zong; Jun Xu

    2007-01-01

    A high efficient diode-pumped Tm:YAP laser is reported. The maximum output power at 1981 nm is 5.2 W and the slope efficiency is 30%. Unpolarized absorption near 800 nm and unpolarized fluorescence spectra near 1800 nm pumped by laser diode (LD) are measured. In addition, the relationship between operation temperature and output power is discussed.

  3. Single-frequency operation of a diode-pumped green laser using multi-Brewster plates

    Institute of Scientific and Technical Information of China (English)

    Quan Zheng(郑权); Ling Zhao(赵岭); Longsheng Qian(钱龙生)

    2003-01-01

    In a diode-pumped, KTP intracavity frequency-doubled green laser, multi-Brewster plates are used toachieve high power single-frequency operation. With a simple experimental setup, single-frequency opera-tion of the diode-pumped green laser with output of 46 and 218 mW is obtained by one and three Brewsterplate, respectively.

  4. Comparison of the noise performance of 10GHz QW and QD mode-locked laser diodes

    DEFF Research Database (Denmark)

    Carpintero, Guillermo; Thompson, Mark G.; Yvind, Kresten

    2010-01-01

    This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes.......This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes....

  5. 635nm diode laser biostimulation on cutaneous wounds

    Science.gov (United States)

    Solmaz, Hakan; Gülsoy, Murat; Ülgen, Yekta

    2014-05-01

    Biostimulation is still a controversial subject in wound healing studies. The effect of laser depends of not only laser parameters applied but also the physiological state of the target tissue. The aim of this project is to investigate the biostimulation effects of 635nm laser irradiation on the healing processes of cutaneous wounds by means of morphological and histological examinations. 3-4 months old male Wistar Albino rats weighing 330 to 350 gr were used throughout this study. Low-level laser therapy was applied through local irradiation of red light on open skin excision wounds of 5mm in diameter prepared via punch biopsy. Each animal had three identical wounds on their right dorsal part, at which two of them were irradiated with continuous diode laser of 635nm in wavelength, 30mW of power output and two different energy densities of 1 J/cm2 and 3 J/cm2. The third wound was kept as control group and had no irradiation. In order to find out the biostimulation consequences during each step of wound healing, which are inflammation, proliferation and remodeling, wound tissues removed at days 3, 7, 10 and 14 following the laser irradiation are morphologically examined and than prepared for histological examination. Fragments of skin including the margin and neighboring healthy tissue were embedded in paraffin and 6 to 9 um thick sections cut are stained with hematoxylin and eosin. Histological examinations show that 635nm laser irradiation accelerated the healing process of cutaneous wounds while considering the changes of tissue morphology, inflammatory reaction, proliferation of newly formed fibroblasts and formation and deposition of collagen fibers. The data obtained gives rise to examine the effects of two distinct power densities of low-level laser irradiation and compare both with the non-treatment groups at different stages of healing process.

  6. High power visible diode laser for the treatment of eye diseases by laser coagulation

    Science.gov (United States)

    Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

    2015-03-01

    We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

  7. Portable multiwavelength laser diode source for handheld photoacoustic devices

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2016-04-01

    The ageing population faces today an increase of chronic diseases such as rheumatism/arthritis, cancer and cardio vascular diseases for which appropriate treatments based on a diagnosis at an early-stage of the disease are required. Some imaging techniques are already available in order to get structural information. Within the non-invasive group, ultrasound images are common in these fields of medicine. However, there is a need for a point-of-care device for imaging smaller structures such as blood vessels that cannot be observed with purely ultrasound based devices. Photoacoustics proved to be an attractive candidate. This novel imaging technique combines pulsed laser light for excitation of tissues and an ultrasound transducer as a receptor. Introduction of this technique into the clinic requires to drastically shrink the size and cost of the expensive and bulky nanosecond lasers generally used for light emission. In that context, demonstration of ultra-short pulse emission with highly efficient laser diodes in the near-infrared range has been performed by Quantel, France. A multi-wavelength laser source as small as a hand emitted more than 1 mJ per wavelength with four different wavelengths available in pulses of about 90 ns. Such a laser source can be integrated into high sensitivity photoacoustic handheld systems due to their outstanding electrical-to-optical efficiency of about 25 %. Further work continues to decrease the pulse length as low as 40 ns while increasing the pulse energy to 2 mJ.

  8. Laser diode feedback interferometer for measurement of displacements without ambiguity

    Energy Technology Data Exchange (ETDEWEB)

    Donati, S.; Giuliani, G.; Merlo, S. [Univ. di Pavia (Italy). Dipt. di Elettronica

    1995-01-01

    The authors report what, to their knowledge, is the first example of laser feedback interferometer capable of measuring displacements of arbitrary form using a single interferometric channel. With a GaAlAs laser diode they can measure 1.2-m displacements, with interferometric resolution, simply by means of the backreflection from the surface (reflective or diffusive) under test. The operation is performed at moderate (i.e., not very weak) levels of feedback, such that a two-level hysteresis is found in the amplitude modulated signal. This is shown to allow the recovery of displacement without sign ambiguity from a single interferometric signal. Experimental results are reported, which are found to be in good agreement with the underlying theory. Performances of the developed feedback interferometer are finally presented.

  9. Multiple Isotope Magneto Optical Trap from a single diode laser

    Science.gov (United States)

    Gomez, Eduardo; Valenzuela, Victor; Hamzeloui, Saeed; Gutierrez, Monica

    2013-05-01

    We present a simple design for a Dual Isotope Magneto Optical Trap. The system requires a single diode laser, a fiber modulator and a tapered amplifier to trap and completely control both 85Rb and 87Rb. We generate all the frequencies needed for trapping both species using the fiber intensity modulator. All the frequencies are amplified simultaneously with the tapered amplifier. The position and power of each frequency is now controlled independently on the RF rather than on the optical side. This introduces an enormous simplification for laser cooling that often requires an acousto-optic modulator for each frequency. The range of frequency changes is much bigger than what is available with acousto-optic modulators since in our case is determined by the modulator bandwidth (10 GHz). Additional isotopes can be simply added by including additional RF frequencies to the modulator and extra beams for other uses can be produced the same way. Support from CONACYT, PROMEP and UASLP.

  10. Study of pseudo noise CW diode laser for ranging applications

    Science.gov (United States)

    Lee, Hyo S.; Ramaswami, Ravi

    1992-11-01

    A new Pseudo Random Noise (PN) modulated CW diode laser radar system is being developed for real time ranging of targets at both close and large distances (greater than 10 KM) to satisy a wide range of applications: from robotics to future space applications. Results from computer modeling and statistical analysis, along with some preliminary data obtained from a prototype system, are presented. The received signal is averaged for a short time to recover the target response function. It is found that even with uncooperative targets, based on the design parameters used (200-mW laser and 20-cm receiver), accurate ranging is possible up to about 15 KM, beyond which signal to noise ratio (SNR) becomes too small for real time analog detection.

  11. Characteristics of InGaN multiple quantum well blue-violet laser diodes

    Institute of Scientific and Technical Information of China (English)

    LI Deyao; YANG Hui; LIANG Junwu; ZHANG Shuming; WANG Jianfeng; CHEN Jun; CHEN Lianghui; CHONG Ming; ZHU Jianjun; ZHAO Degang; LIU Zongshun

    2006-01-01

    Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.orted. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.

  12. Laser Boronizing of Stainless Steel with Direct Diode Laser

    Science.gov (United States)

    Kusuhara, Takayoshi; Morimoto, Junji; Abe, Nobuyuki; Tsukamoto, Masahiro

    Boronizing is a thermo-chemical surface treatment in which boron atoms are diffused into the surface of a work piece to form borides with the base material. When applied to the metallic materials, boronizing provides wear and abrasion resistance comparable to sintered carbides. However conventional boronizing is carried out at temperatures ranging from 800°C to 1050°C and takes from one to several hours. The structure and properties of the base material is influenced considerably by the high temperature and long treatment time. In order to avoid these drawbacks of conventional boronizing, laser-assisted boronizing is investigated which activates the conventional boronizing material and the work piece with a high density laser power. In this study, effect of laser characteristics was examined on the laser boronizing of stainless steel. After laser boronizing, the microstructure of the boride layer was analyzed with an optical microscope, electron probe micro analyser(EPMA) and X-ray diffractometer (XRD). The mechanical properties of borided layer were evaluated using Vickers hardness tester and sand erosion tester. Results showed that the boride layer was composed of NiB, CrB, FeB and Fe2B, and get wear resistance.

  13. Pulse width tunable subpicosecond pulse generation from an actively modelocked monolithic MQW laser/MQW electroabsorption modulator

    Science.gov (United States)

    Takada, A.; Sato, K.; Saruwatari, M.; Yamamoto, M.

    1994-05-01

    Actively modelocked pulses are generated from a 1.59 micron MQW laser integrated with an MQW electroabsorption modulator driven at the monolithic cavity frequency. The pulse width is controlled from 39 ps to 0.55 ps by changing the inverse bias voltage applied to the electroabsorption modulator and by linear pulse compression using a fiber.

  14. Combining femtosecond laser ablation and diode laser welding in lamellar and endothelial corneal transplants

    Science.gov (United States)

    Pini, Roberto; Rossi, Francesca; Matteini, Paolo; Ratto, Fulvio; Menabuoni, Luca; Lenzetti, Ivo; Yoo, Sonia H.; Parel, Jean-Marie

    2008-02-01

    Based on our previous clinical experiences in minimally invasive diode laser-induced welding of corneal tissue in penetrating keratoplasty (PK), i.e. full-thickness transplant of the cornea, we combined this technique with the use of a femtosecond laser for applications in lamellar (LK) and endothelial (EK) keratoplasty. In LK, the femtosecond laser was used to prepare donor button and recipient corneal bed; the wound edges were stained with a water solution of Indocyanine Green (ICG) and then irradiated with a diode laser emitting in CW mode to induce stromal welding. Intraoperatory observations and follow-up results up to 6 months indicated the formation of a smooth stromal interface, total absence of edema as well as inflammation, and reduction of post-operative astigmatism, as compared with conventional suturing procedures. In EK the femtosecond laser was used for the preparation of a 100 μm thick, 8.5mm diameter donor corneal endothelium flap. The flap stromal side was stained with ICG. After stripping the recipient Descemet's membrane and endothelium, the donor flap was positioned in the anterior chamber on the inner face of the cornea by an air bubble and secured to the recipient cornea by diode laser pulses delivered by means of a fiberoptic contact probe introduced in the anterior chamber, which produced welding spots of 200 μm diameter. Femtosecond laser sculpturing of the donor cornea provided lamellar and endothelial flaps of preset and constant thickness. Diode laserinduced welding showed a unique potential to permanently secure the donor flap in place, avoiding postoperative displacement and inflammation reaction.

  15. Tunable diode laser spectroscopy as a technique for combustion diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Bolshov, M.A., E-mail: bolshov@isan.troitsk.ru; Kuritsyn, Yu.A.; Romanovskii, Yu.V.

    2015-04-01

    Tunable diode laser absorption spectroscopy (TDLAS) has become a proven method of rapid gas diagnostics. In the present review an overview of the state of the art of TDL-based sensors and their applications for measurements of temperature, pressure, and species concentrations of gas components in harsh environments is given. In particular, the contemporary tunable diode laser systems, various methods of absorption detection (direct absorption measurements, wavelength modulation based phase sensitive detection), and relevant algorithms for data processing that improve accuracy and accelerate the diagnostics cycle are discussed in detail. The paper demonstrates how the recent developments of these methods and algorithms made it possible to extend the functionality of TDLAS in the tomographic imaging of combustion processes. Some prominent examples of applications of TDL-based sensors in a wide range of practical combustion aggregates, including scramjet engines and facilities, internal combustion engines, pulse detonation combustors, and coal gasifiers, are given in the final part of the review. - Highlights: • Overview of modern TDL-based sensors for combustion • TDL systems, methods of absorption detection and algorithms of data processing • Prominent examples of TDLAS diagnostics of the combustion facilities • Extension of the TDLAS on the tomographic imaging of combustion processes.

  16. The case for inelastic reflection of photons in laser diodes

    Science.gov (United States)

    Hacskaylo, M.

    1983-12-01

    The results of an experimental investigation of single-heterojunction, close-confinement-type GaAlAs laser diodes operating at 8175.25 A are reported and analyzed. The diode (with cavity size 300 x 150 x 2.5 microns) was mounted on a windowless low-impedance header and pulsed with a laser modulator mounted on a goniometer; the spectra were scanned in both lateral and transverse directions with a Czerny-Turner scanning spectrometer. Diagrams of the setup and sample spectra are provided. The wavelength of the stimulated emission is found to increase with emission angle by 0.42 + or - 0.08 A/deg in the lateral direction and 0.01 A/deg in the transverse direction. The wavelength increase is attributed to photon momentum loss due to inelastic reflection at the Fabry-Perot surfaces, and this optical model is developed to estimate the per-photon changes in essential parameters and the momentum-loss-induced pressure and energy per pulse affecting the cavity wall: pressure estimates range from 6.28 to 6.94 Gdyn/sq cm and surface-heating estimates from 4.09 to 4.52 kcal/mol for the 70-nsec, 19-21-W pulses required to cause catastrophic facet damage. These values are in reasonable agreement with the Knoop hardness and heat of fusion, respectively, of GaAs.

  17. [Measurement of oxygen concentration using multimode diode laser absorption spectroscopy].

    Science.gov (United States)

    Gao, Guang-zhen; Cai, Ting-dong; Hu, Bo; Jia, Tian-jun

    2015-01-01

    Tunable diode laser absorption spectroscopy (TDLAS) is a widely used technique for high sensitivity, good selectivity and fast response. It is widely used in environment monitoring, industrial process control and biomedical sensing. In order to overcome the drawbacks of TDLAS including high cost, poor stability and center wavelength shift problem. A multi-mode diode laser system based on correlation spectroscopy and wavelength modulation spectroscopy (TMDL-COSPEC-WMS) was used to measure O2 concentration near 760nm at the 1%~30% range of near room temperature. During the experiment, the light is splitter into two beams, respectively through the sample and measuring cell, two receiving optical signal collection containing gas concentration information sent back stage treatment, invert the oxygen concentration through correlation and ratio between measured signal and reference signal, the correlation spectroscopy harmonic detection technique is used to improve the stability of the system and the signal to noise ratio. The result showed that, there was a good linear relationship between the measured oxygen concentration and the actual concentration value. A detection limit of 280 pmm. m in the 1 atmospheric which approved of the same sample. A continuous measurement for oxygen with the standard deviation of 0. 056% in ambient air during approximately 30 minutes confirms the stability and the capability of the system. The design of the system includes soft and hardware can meet the needs of oxygen online monitoring. The experimental device is simple and easy to use, easy to complex environment application.

  18. Beam shaping design for compact and high-brightness fiber-coupled laser-diode system.

    Science.gov (United States)

    Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

    2015-06-20

    Fiber-coupled laser diodes have become essential sources for fiber laser pumping and direct energy applications. A compact and high-brightness fiber-coupled system has been designed based on a significant beam shaping method. The laser-diode stack consists of eight mini-bars and is effectively coupled into a standard 100 μm core diameter and NA=0.22 fiber. The simulative result indicates that the module will have an output power over 440 W. Using this technique, compactness and high-brightness production of a fiber-coupled laser-diode module is possible.

  19. The advances and characteristics of high-power diode laser materials processing

    Science.gov (United States)

    Li, Lin

    2000-10-01

    This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

  20. A Diode-Laser-System for Laser-Assisted Bending of Brittle Materials

    Directory of Open Access Journals (Sweden)

    F. Bammer

    2011-01-01

    Full Text Available We developed a small and compact system of diode lasers, which can be inserted into the lower tools of a bending press. The parts of the system allow easy plug and play operation and can be installed for any bending length. The diode laser, which is based on 200 W laser bars on microchannel cooler, allows the heating of sheet metals in the forming zone shortly before and during the bending process. There is no unnecessary heating of other parts of the bending equipment, no wear of the tool, and, if properly done, no damage of the surface of the metal. The power per bending length is 16 kW/m.

  1. Functional possibilities for forming different inverse population distributions in diode-side-pumped laser heads

    Energy Technology Data Exchange (ETDEWEB)

    Grechin, S G; Nikolaev, P P; Sharandin, E A [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

    2014-10-31

    The functional possibilities of diode-side-pumped laser heads of solid-state lasers for forming inverse population distributions of different types are analysed. The invariants determining the relationship between the laser head parameters upon scaling are found. The results of comparative experimental studies are presented. (lasers)

  2. Pulsed dermatologic 20W diode-laser emitting at 975-nm

    Science.gov (United States)

    Piechowski, L.; Cenian, W.; Sawczak, M.; Cenian, A.

    2013-01-01

    The pulsed dermatologic laser for photothermolysis is constructed basing on technology of 975 nm diode lasers developed for fiber-laser excitation. In near future these lasers can replace ND:YAG ones for dermatologic applications, especially therapy of deep skin diseases.

  3. Efficient laser-diode end-pumped Nd:GGG lasers at 1054 and 1067 nm.

    Science.gov (United States)

    Xu, Bin; Xu, Huiying; Cai, Zhiping; Camy, P; Doualan, J L; Moncorgé, R

    2014-10-10

    Efficient and compact laser-diode end-pumped Nd:GGG simultaneous multiwavelength continuous-wave lasers at ∼1059, ∼1060 and ∼1062  nm were first demonstrated in a free-running 30 mm plano-concave laser cavity. The maximum output power was up to 3.92 W with a slope efficiency of about 53.6% with respect to the absorbed pump power. By inserting a 0.1 mm optical glass plate acting as a Fabry-Pérot etalon, a single-wavelength laser at ∼1067  nm with a maximum output power of 1.95 W and a slope efficiency of 28.5% can be obtained. Multiwavelength lasers, including those at ∼1054 or ∼1067  nm, were also achievable by suitably tilting the glass etalon. These simultaneous multiwavelength lasers provide a potential source for terahertz wave generation.

  4. Diode laser heat treatment of lithium manganese oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Proell, J., E-mail: johannes.proell@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Kohler, R.; Mangang, A.; Ulrich, S.; Bruns, M.; Seifert, H.J. [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Pfleging, W. [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Karlsruhe Nano Micro Facility, H.-von-Helmholtz-Platz 1, 76344 Egg.-Leopoldshafen (Germany)

    2012-04-01

    The crystallization of lithium manganese oxide thin films prepared by radio frequency magnetron sputtering on stainless steel substrates under 10 Pa argon pressure is demonstrated by a laser annealing technique. Laser annealing processes were developed as a function of annealing time and temperature with the objective to form an electrochemically active lithium manganese oxide cathode. It is demonstrated, that laser annealing with 940 nm diode laser radiation and an annealing time of 2000 s at 600 Degree-Sign C delivers appropriate parameters for formation of a crystalline spinel-like phase. Characteristic features of this phase could be detected via Raman spectroscopy, showing the characteristic main Raman band at 627 cm{sup -1}. Within cyclic voltammetric measurements, the two characteristic redox pairs for spinel lithium manganese oxide in the 4 V region could be detected, indicating that the film was well-crystallized and de-/intercalation processes were reversible. Raman post-analysis of a cycled cathode showed that the spinel-like structure was preserved within the cycling process but mechanical degradation effects such as film cracking were observed via scanning electron microscopy. Typical features for the formation of an additional surface reaction layer could be detected using X-ray photoelectron spectroscopy.

  5. Interference comparator for laser diode wavelength and wavelength instability measurement

    Science.gov (United States)

    Dobosz, Marek; KoŻuchowski, Mariusz

    2016-04-01

    Method and construction of a setup, which allows measuring the wavelength and wavelength instability of the light emitted by a laser diode (or a laser light source with a limited time coherence in general), is presented. The system is based on Twyman-Green interferometer configuration. Proportions of phases of the tested and reference laser's interference fringe obtained for a set optical path difference are a measure of the unknown wavelength. Optical path difference in interferometer is stabilized. The interferometric comparison is performed in vacuum chamber. The techniques of accurate fringe phase measurements are proposed. The obtained relative standard uncertainty of wavelength evaluation in the tested setup is about 2.5 ṡ 10-8. Uncertainty of wavelength instability measurement is an order of magnitude better. Measurement range of the current setup is from 500 nm to 650 nm. The proposed technique allows high accuracy wavelength measurement of middle or low coherence sources of light. In case of the enlarged and complex frequency distribution of the laser, the evaluated wavelength can act as the length master in interferometer for displacement measurement.

  6. Polarization properties of laser-diode-pumped micro-grained Nd:YAG ceramic lasers

    CERN Document Server

    Otsuka, Kenju

    2008-01-01

    Detailed polarization properties have been examined in laser-diode-pumped (LD-pumped) micro-grained ceramic Nd:YAG lasers in different microchip cavity configurations. Stable linearly-polarized single-frequency oscillations, whose polarization direction coincides with that of an LD pump light, were observed in an external cavity scheme. While, in the case of a thin-slice laser scheme with coated reflective ends, elliptically-polarized single-frequency operations took place in the low pump-power regime and dynamic instabilities appeared, featuring self-induced antiphase modulations among counter-rotating circularly-polarized components belonging to the same longitudinal mode, with increasing the pump power

  7. Investigation of laser diode face-pumped high average power heat capacity laser

    Institute of Scientific and Technical Information of China (English)

    Shenjin Zhang; Shouhuan Zhou; Xiaojun Tang; Guojiang Bi; Huachang LV

    2006-01-01

    The three-dimensional (3D) pump intensity distribution in medium of the laser diode (LD) pumped highaverage power heat capacity laser is simulated by the ray tracing method, and the divergence characteristicsof fast axis and slow axis of LD are simultaneously considered. The transient 3D temperature and stressdistributions are also simulated by the finite element method (FEM) with considering the uneven heatsource distribution in medium. A LD face-pumped Nd:GGG heat capacity laser is designed. The averageoutput power is 1.49 kW with an optical-optical efficiency of 24.1%.

  8. New class of compact diode pumped sub 10 fs lasers for biomedical applications

    DEFF Research Database (Denmark)

    Le, T.; Mueller, A.; Sumpf, B.;

    2016-01-01

    -laser. In this work we present an alternative method by deploying frequency-doubled IR diodes with good beam qualities to pump fs-lasers. The revolutionary approach allows choosing any pump wavelengths in the green region and avoids complicated relay optics for the diodes. For the first time we show results...... of a diode-pumped 10 fs-laser and how a single diode setup can be integrated into a 30 x 30 cm(2) fs-laser system generating sub 20 fs laser pulses with output power towards half a Watt. This technology paves the way for a new class of very compact and cost-efficient fs-lasers for life science and industrial...... applications....

  9. Pulse laser head with monolithic thermally bonded microchip operating at 1.5 μm wavelength

    Science.gov (United States)

    Młyńczak, Jarosław; Kopczyński, Krzysztof; Belghachem, Nabil; Kisielewski, Jarosław; Stepień, Ryszard; Wychowaniec, Marek; Galas, Jacek; Litwin, Dariusz; CzyŻewski, Adam

    2016-12-01

    On the basis of thermally bonded Er,Yb:glass/Co:MALO microchip a laser head pumped by fiber coupled laser diode was designed. The performance of the laser head were investigated and the main output parameters were determined. The energy over 40 μJ in 3.8 ns pulse with repetition rate of 0.735 kHz was achieved. The laser head characterized by such parameters can successfully be used in tele-detection applications.

  10. An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Zholnerov, V S [Russian Institute of Radionavigation and Time, St.Petersburg (Russian Federation); Ivanov, A V; Kurnosov, V D; Kurnosov, K V; Romantsevich, V I; Chernov, R V [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2013-09-30

    We have studied the amplitude noise in a fibre Bragg grating laser diode. It has been shown that discontinuities in noise characteristics correlate with those in the power – current and spectral characteristics of the laser diode, whereas the noise characteristics of the pump source have no such discontinuities. The highest noise level has been observed at pump currents corresponding to concurrent generation of two longitudinal modes. (lasers)

  11. Actively controlled tuning of an external cavity diode laser by polarization spectroscopy.

    Science.gov (United States)

    Führer, Thorsten; Stang, Denise; Walther, Thomas

    2009-03-30

    We report on an universal method to achieve and sustain a large mode-hop free tuning range of an external cavity diode laser. By locking one of the resonators using a closed loop control based on polarization spectroscopy while tuning the laser we achieved mode-hop free tuning of up to 130 GHz with a non AR-coated, off-the-shelf laser diode.

  12. Period-Doubling in 10 GHz Gain-Switched DFB Laser Diode

    Institute of Scientific and Technical Information of China (English)

    WU Jian; QIU Ji-Fang; LIN Jin-Tong

    2007-01-01

    The distinct period doubling behaviour in a 10 GHz gain-switched (GS) DFB laser is experimentally investigatedin frequency domain and in time domain. The period doubling occurs as the frequency of the rf driving signal is close to or higher than the -3 dB cutoff frequency of the DFB laser diode, and the amplitude of the rf driving signal required to achieve period doubling increases linearly with the increasing bias current of the laser diode.

  13. Monolithic polymer microcavity lasers with on-top evaporated dielectric mirrors

    Science.gov (United States)

    Persano, Luana; Carro, Pompilio Del; Mele, Elisa; Cingolani, Roberto; Pisignano, Dario; Zavelani-Rossi, Margherita; Longhi, Stefano; Lanzani, Guglielmo

    2006-03-01

    We report on a monolithic polymeric microcavity laser with all dielectric mirrors realized by low-temperature electron-beam evaporation. The vertical heterostructure was realized by 9.5 TiOx/SiOx pairs evaporated onto an active conjugated polymer, that was previously spincast onto the bottom distributed Bragg reflector (DBR). The cavity supports single-mode lasing at 509nm, with a linewidth of 1.8nm, and a lasing threshold of 84μJ/cm2. We also report on the emission properties of the polymer we used, investigated by a pump-probe technique. These results show that low-temperature electron-beam evaporation is a powerful and straightforward fabrication technique for molecular-based fully integrable microcavity resonators.

  14. Green monolithic II-VI vertical-cavity surface-emitting laser operating at room temperature

    Science.gov (United States)

    Kruse, C.; Ulrich, S. M.; Alexe, G.; Roventa, E.; Kröger, R.; Brendemühl, B.; Michler, P.; Gutowski, J.; Hommel, D.

    2004-02-01

    The realization of a monolithic all II-VI-based vertical cavity surface emitting laser (VCSEL) for the green spectral region is reported. Optically pumped lasing operation was achieved up to room temperature using a planar VCSEL structure. Taking advantage of distributed Bragg-reflectors based on MgS/Zn(Cd)Se superlattices as the low-refractive index material and ZnS0.06Se0.94 layers as the high-index material with a refractive index contrast of n = 0.6, a quality factor exceeding Q = 2000 is reached by using only 18 Bragg periods for the bottom DBR and 15 Bragg periods for the top DBR. The threshold power density is 0.32 MW/cm2 at a temperature of 10 K (emission wavelength 498.5 nm) and 1.9 MW/cm2 at room temperature (emission wavelength 502.3 nm).

  15. Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Li, B. X.; Zhou, F.; Wang, B. J.; Wang, L. F.; Bian, J.; Zhao, L. J.; Wang, W.

    2006-04-01

    A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10-10 is confirmed.

  16. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    Energy Technology Data Exchange (ETDEWEB)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  17. Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Schilling, M.; Bouayad-Amine, J.; Feeser, T.; Haisch, H.; Kuehn, E.; Lach, E.; Satzke, K.; Weber, J.; Zielinski, E. [Alcatel Telecom, Stuttgart (Germany). Research Div.

    1996-12-31

    The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO{sub 2} patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths < 13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 {micro}m wavelength.

  18. Monolithic PM Raman fiber laser at 1679 nm for Raman amplification at 1810 nm

    DEFF Research Database (Denmark)

    Svane, Ask Sebastian; Rottwitt, Karsten

    2013-01-01

    Stimulated Raman scattering (SRS) has been subject to much attention within the field of fiber lasers and amplifiers as it provides an extended wavelength coverage in comparison to rare-earth based devices. Motivated by the projected capacity crunch [1], different approaches are being explored...... demonstrate a monolithic RM Raman fiber laser (RFL), which acts as a pump for a Raman amplifier (RA) at 1810 nm. The lasing wavelength of a RFL, thus also for a RA, can in principle be designed arbitrarily within the entire wavelength range from the Erbium band up to the Thulium/Holmium band...... of OFS PM Raman fiber, with an estimated propagation loss of 0.42/0.46/1.3 dB/km at 1564/1679/1810 nm. The Raman gain coefficient was measured to be gR=2.66/2.35 W-1km-1 at 1679/1810 nm. The laser curve of the RFL is depicted in Fig. 1b, with a slope efficiency of 67 %. The high slope efficiency...

  19. High-Efficiency High-Power Nd:YAG Laser under 885 nm Laser Diode Pumping

    Institute of Scientific and Technical Information of China (English)

    LI Fang-Qin; ZHANG Xiao-Fu; ZONG Nan; YANG Jing; PENG Qin-Jun; CUI Da-Fu; XU Zu-Yan

    2009-01-01

    A high-efficiency high-power Nd:YAG laser under 885 nm laser diode (LD) pumping is demonstrated. The laser crystal is carefully designed, and the overlapping between the pump modes and the laser modes is optimized. The maximum output power at 1064 nm is 87 W under the absorbed pump power 127.7 W, corresponding to a slope efficiency of 72.4% and an optical-optical efficiency of 68.1%. The optical-optical efficiency is 58.4% for the pump power emitted directly from the LD. To our best knowledge, this is the maximal optical-optical conversion efficiency obtained for the LD end-pumped Nd:YAG lasers so far.

  20. Laser-diode pumped Nd:GdVO4 ultraviolet laser with LBO frequency tripling

    Institute of Scientific and Technical Information of China (English)

    WANG Yun; FAN Xiu-wei; PENG Qian-qian; LIU Jie; HE Jing-liang

    2005-01-01

    We have demonstrated a laser-diode pumped Nd:GdVO4 extra-cavity frequency tripling ultraviolet laser with a LBO crystal in this paper.Under the acousto-optic (A-O) Q-switched operation,we have obtained 355 nm ultraviolet laser,with pulse width of 25 ns and pulse repetition rate of 20 kHz.By using a type Ⅰ non-critical phase-matched LBO crystal,the SHG output power of 822 mW is achieved at the incident pump power of 16 W. The output power of 355nm UV laser is 260mW with a type Ⅱ phase-matched LBO crystal,and the conversion efficiency (1 064 nm-355 nm ) is 5.9 %.The power stability of 355 nm laser is 1.7% in 1 h.

  1. Laser remelting of Ti6AL4V using high power diode laser

    Science.gov (United States)

    Amaya-Vázquez, M. R.; Sánchez-Amaya, J. M.; Boukha, Z.; El Amrani, K.; Botana, F. J.

    2012-04-01

    Titanium alloys present excellent mechanical and corrosion properties, being widely employed in different industries such as medical, aerospace, automotive, petrochemical, nuclear and power generation, etc. Ti6Al4V is the α-β alloy most employed in industry. The modification of its properties can be achieved with convectional heat treatments and/or with laser processing. Laser remelting (LR) is a technology applied to Ti6Al4V by other authors with excimer and Nd-Yag laser with pure argon shielding gas to prevent risk of oxidation. In the present contribution, laser remelting has been applied for the first time to Ti6Al4V with a high power diode laser (with pure argon as shielding gas). Results showed that remelted samples (with medium energy densities) have higher microhardness and better corrosion resistance than Ti6Al4V base metal.

  2. High-average-power diode-pumped Yb: YAG lasers

    Energy Technology Data Exchange (ETDEWEB)

    Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

    1999-10-01

    A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M{sup 2} = 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M{sup 2} value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M{sup 2} < 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods.

  3. Aluminium surface treatment with ceramic phases using diode laser

    Science.gov (United States)

    Labisz, K.; Tański, T.; Brytan, Z.; Pakieła, W.; Wiśniowski, M.

    2016-07-01

    Ceramic particles powder feeding into surface layer of engineering metal alloy is a well-known and widely used technique. New approach into the topic is to obtain finely distributed nano-sized particles involved in the aluminium matrix using the traditional laser technology. In this paper are presented results of microstructure investigation of cast aluminium-silicon-copper alloys surface layer after heat treatment and alloying with ceramic carbides of WC and ZrO2 using high-power diode laser. The surface layer was specially prepared for the reason of reducing the reflectivity, which is the main problem in the up-to-date metal matrix composites production. With scanning electron microscopy, it was possible to determine the deformation process and distribution of WC and ZrO2 ceramic powder phase. Structure of the surface after laser treatment changes, revealing three zones—remelting zone, heat-affected zone and transition zone placed over the Al substrate. The structural changes of ceramic powder, its distribution and morphology as well as microstructure of the matrix material influence on functional properties, especially wear resistance and hardness of the achieved layer, were investigated.

  4. Temperature issues with white laser diodes, calculation and approach for new packages

    Science.gov (United States)

    Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

    2015-01-01

    Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

  5. A low-temperature external cavity diode laser for broad wavelength tuning

    Science.gov (United States)

    Tobias, William G.; Rosenberg, Jason S.; Hutzler, Nicholas R.; Ni, Kang-Kuen

    2016-11-01

    We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to the spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to -64 °C, more than 85 °C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation is achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers and extending the wavelength coverage of commercial laser diodes.

  6. Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

    CERN Document Server

    Pal, Vishwa; Ghosh, R

    2011-01-01

    We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, $\\alpha$. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through $\\alpha$ in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as $\\alpha$ varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to $\\alpha$.

  7. Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

    Science.gov (United States)

    Pal, Vishwa; Prasad, Awadhesh; Ghosh, R.

    2011-12-01

    We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

  8. Liquid metal heat sink for high-power laser diodes

    Science.gov (United States)

    Vetrovec, John; Litt, Amardeep S.; Copeland, Drew A.; Junghans, Jeremy; Durkee, Roger

    2013-02-01

    We report on the development of a novel, ultra-low thermal resistance active heat sink (AHS) for thermal management of high-power laser diodes (HPLD) and other electronic and photonic components. AHS uses a liquid metal coolant flowing at high speed in a miniature closed and sealed loop. The liquid metal coolant receives waste heat from an HPLD at high flux and transfers it at much reduced flux to environment, primary coolant fluid, heat pipe, or structure. Liquid metal flow is maintained electromagnetically without any moving parts. Velocity of liquid metal flow can be controlled electronically, thus allowing for temperature control of HPLD wavelength. This feature also enables operation at a stable wavelength over a broad range of ambient conditions. Results from testing an HPLD cooled by AHS are presented.

  9. Highly Reliable Operation of Red Laser Diodes for POF Data Links

    Science.gov (United States)

    Ohgoh, Tsuyoshi; Mukai, Atsushi; Mukaiyama, Akihiro; Asano, Hideki; Hayakawa, Toshiro

    Laser diodes for plastic optical fiber (POF) data links are required stable operation >100,000h at 60°C, 5mW and the transmission speed beyond 1Gbps. By optimizing crystal growth conditions and device structures, we have successfully fabricated highly reliable laser diodes with 1.25 Gbps transmission speed. The median lifetime for 5mW operation at 60°C was estimated to be more than 800,000h. These results indicate that 660 nm band laser diodes are very promising light sources for POF data links.

  10. Quasi-passive heat sink for high-power laser diodes

    Science.gov (United States)

    Vetrovec, John

    2009-02-01

    We report on a novel heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink uses a liquid coolant flowing at high speed in a miniature closed and sealed loop. Diode waste heat is received at high flux and transferred to environment, coolant fluid, heat pipe, or structure at a reduced flux. When pumping solid-state or alkali vapor lasers, diode wavelength can be electronically tuned to the absorption features of the laser gain medium. This paper presents the heat sink physics, engineering design, performance modeling, and configurations.

  11. Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

    Science.gov (United States)

    Pilgrim, J. S.; Peterson, K. A.

    2001-01-01

    Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

  12. Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

    Science.gov (United States)

    Maeda, Y

    1994-01-10

    Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

  13. Influence of laser diode red beams on germination rate of tomato seeds

    Science.gov (United States)

    Niculita, P.; Danaila-Guidea, Silvana; Livadariu, Oana; Popa, M.; Ristici, M.; Ristici, Esofina

    2007-08-01

    Laser diodes are lighting devices in which the light is generated by stimulated emission rather than spontaneous emission, with high generation efficiency. A device using 20 red laser diodes is presented. Emission wavelengths are in the 650-670 nm range. Emission power for each laser diode is about 4 mW. This device is used to irradiate the tomato seeds with three different irradiating doses. There were three Petri vessels for each dose having 25 seeds each of them. Results show that the germination rate increases for irradiated seeds. The red light has a positive effect for vegetable cultivated in protected area.

  14. Methane-based in situ temperature rise measurement in a diode-pumped rubidium laser.

    Science.gov (United States)

    Wang, Rui; Yang, Zining; Wang, Hongyan; Xu, Xiaojun

    2017-02-15

    We measured active zone temperature rise of an operational diode-pumped rubidium laser non-perturbatively with methane-based near-infrared tunable diode laser spectroscopy (TDLAS). For a Rb+ methane diode-pumped alkali laser (DPAL), the temperature rise was obtained. Especially, the temperature differences (∼10  K) between lasing and un-lasing cases were well identified, which demonstrated a high sensitivity of the method. To our knowledge, this is the first demonstration of extending the methane-based TDLAS method to DPAL study.

  15. Comparison between sequentional treatment with diode and alexandrite lasers versus alexandrite laser alone in the treatment of hirsutism.

    Science.gov (United States)

    Nilforoushzadeh, Mohammad Ali; Naieni, Farahnaz Fatemi; Siadat, Amir Hossein; Rad, Leila

    2011-11-01

    Laser systems that are commonly used for the treatment of hirsutism include the ruby laser (694 nm), the diode laser (800 nm), the alexandrite laser (755 nm) and the Nd:YAG laser (1084 nm). The diode laser and alexandrite laser are considered effective in treatment of hirsutism in dark-skinned patients. The response of hairs to these laser systems is variable and not complete. In this study, we compared the efficacy of these two laser systems for permanent hair removal. This was a randomized, controlled clinical trial that was performed with women of the age range 15-45 years old. After obtaining informed consent, the samples were randomized into two groups using random allocation software. The first group was treated with alexandrite laser alone (four sessions, two months apart). The second group was treated sequentially with diode laser for the first two sessions and alexandrite laser for the next two sessions. Overall, 111 patients (57 patients in the alexandrite laser group and 54 patients in the sequential diode-alexandrite laser group) were evaluated. There was no significant difference regarding mean of hair reduction between the two groups during the courses of treatment. Except for the first session, there was no significant difference regarding percent of patient satisfaction between the two groups (P value >0.05). Comparison between the two groups showed no significant difference one month, three months and six months after the last treatment (P value >0.05). Regarding the results of our study, there is no significant difference between sequential treatment with diode and alexandrite lasers versus alexandrite laser alone in the treatment of hirsutism. We suggest that in further studies, the efficacy of sequential treatment with other laser systems is evaluated against single treatment methods.

  16. Remote sensing of atmospheric trace gases by diode laser spectroscopy

    Science.gov (United States)

    Liu, Jianguo; Kan, Ruifeng; He, Yabai; He, Ying; Zhang, Yujun; Xie, Pinhua; liu, Wenqing

    2016-04-01

    Gaseous ammonia is the most abundant alkaline trace gas in the atmosphere. In order to study its role in acid deposition and aerosol formation, as well as its influence on the regional air quality and atmospheric visibility, several instruments has been developed based on TDLAS (Tunable Diode Laser Absorption Spectroscopy) techniques. In this paper, a long open path TDLAS system and a continuous-wave CRDS (Cavity-Ring down Spectroscopy) system are presented. The long open path system has been developed for NH3 in-situ monitoring by combining wavelength modulation with harmonic detection techniques to obtain the necessary detection sensitivity. The prototype instrument has been used to monitor atmospheric NH3 concentration at an urban site near Beijing National Stadium during Beijing Olympics in 2008, and recently used to measure the fluxes of NH3 from farm fields by flux-gradient method. The detection limit for ammonia is proved approximately 3ppb for a total path length of 456m. The continuous-wave, rapidly swept CRDS system has been developed for localized atmospheric sensing of trace gases at remote sites. Passive open-path optical sensor units could be coupled by optical fiber over distances of >1 km to a single transmitter/receiver console incorporating a photodetector and a swept-frequency diode laser tuned to molecule-specific near-infrared wavelengths. A noise-limited minimum detectable mixing ratio of ~11 ppbv is attained for ammonia at atmospheric pressure. The developed instruments are deployable in agricultural, industrial, and natural atmospheric environments.

  17. Diode laser pumped solid state laser. Part IV. ; Noise analysis. Handotai laser reiki kotai laser. 4. ; Noise kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Sakurai, H.; Seno, T.; Tanabe, Y. (Asahi Glass Co. Ltd., Tokyo (Japan))

    1991-06-10

    Concerning the second harmonic generation(SHG) of diode laser pumped solid state laser using a nonlinear optical material, the researches are carried out to pracitically apply to the optical pickup. Therefore, the reduction of output optical noise has become the important researching subject. The theoretical and experimental analyses of noise generating mechanism were carried out for the system in which Nd;YAG as the laser diode and KTP (KTiOPO {sub 4}) as the nonlinear optical crystal were used. The following findings for the noise generating mechanism could be obtained: The competitive interaction between the polarization modes was dominant noise mechanism in the high frequency range from 1 to 20MHz and the noise could be removed sufficiently by using the QWP(quarter wave plate). On the other hand, the noise observed in the low frequency range from 100 to 200kHz depended on the resonance length, agreed qualitatively with the theoretical analysis of the noise to the competitive longitudinal modes and agreed quantitatively with the noise generating frequency range. 10 refs., 13 figs., 1 tab.

  18. Laser Diode Pumped 1.54μm Er:Yb:Phosphate Glass Continuous Wave Compact Laser

    Institute of Scientific and Technical Information of China (English)

    孟凡臻; 宋峰; 张潮波; 丁欣; 商美茹; 张光寅

    2003-01-01

    We report a cw Er3+ :Yb3+ co-doped phosphate glass laser pumped by a laser diode. The maximum output power of 78.3mW and a slope efficiency of 15.25% were achieved. The laser spectral region was from 1532nm to 1535nm, with the peak laser wavelength at 1534nm. The laser modes and time stability were also measured.The thermal effect had little influence on the output in our experiment.

  19. Injection locking of a low cost high power laser diode at 461 nm

    OpenAIRE

    Pagett, C. J. H.; Moriya, P. H.; Teixeira, R. Celistrino; Shiozaki, R. F.; Hemmerling, M.; Courteille, Ph. W.

    2016-01-01

    Stable laser sources at 461 nm are important for optical cooling of strontium atoms. In most existing experiments this wavelength is obtained by frequency doubling infrared lasers, since blue laser diodes either have low power or large emission bandwidths. Here, we show that injecting less than 10 mW of monomode laser radiation into a blue multimode 500 mW high power laser diode is capable of slaving at least 50% of the power to the desired frequency. We verify the emission bandwidth reductio...

  20. Theoretical model for frequency locking a diode laser with a Faraday cell

    Science.gov (United States)

    Wanninger, P.; Shay, T. M.

    1992-01-01

    A new method was developed for frequency locking a diode lasers, called 'the Faraday anomalous dispersion optical transmitter (FADOT) laser locking', which is much simpler than other known locking schemes. The FADOT laser locking method uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. The FADOT method is vibration insensitive and exhibits minimal thermal expansion effects. The system has a frequency pull in the range of 443.2 GHz (9 A). The method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters.

  1. New class of compact diode pumped sub 10 fs lasers for biomedical applications

    DEFF Research Database (Denmark)

    Le, T.; Mueller, A.; Sumpf, B.;

    2016-01-01

    Diode-pumping Ti: sapphire lasers promises a new approach to low-cost femtosecond light sources. Thus in recent years much effort has been taken just to overcome the quite low power and low beam qualities of available green diodes to obtain output powers of several hundred milliwatts from a fs-la...

  2. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

    Energy Technology Data Exchange (ETDEWEB)

    Gorlachuk, P V; Ryaboshtan, Yu L; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Kurnosov, V D; Kurnosov, K V; Zhuravleva, O V; Romantsevich, V I; Chernov, R V; Ivanov, A V; Simakov, V A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2013-09-30

    This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range 1.5 – 1.6 μm. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures. (lasers)

  3. AlGaInN laser diode technology and systems for defence and security applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2015-10-01

    AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

  4. Laser Soldering and Thermal Cycling Tests of Monolithic Silicon Pixel Chips

    CERN Document Server

    Strand, Frode Sneve

    2015-01-01

    An ALPIDE-1 monolithic silicon pixel sensor prototype has been laser soldered to a flex printed circuit using a novel interconnection technique using lasers. This technique is to be optimised to ensure stable, good quality connections between the sensor chips and the FPCs. To test the long-term stability of the connections, as well as study the effects on hit thresholds and noise in the sensor, it was thermally cycled in a climate chamber 1200 times. The soldered connections showed good qualities like even melting and good adhesion on pad/flex surfaces, and the chip remained in working condition for 1080 cycles. After this, a few connections failed, having cracks in the soldering tin, rendering the chip unusable. Threshold and noise characteristics seemed stable, except for the noise levels of sector 2 in the chip, for 1000 cycles in a temperature interval of "10^{\\circ}" and "50^{\\circ}" C. Still, further testing with wider temperature ranges and more cycles is needed to test the limitations of the chi...

  5. Monolithic Y-Ba-Cu-O structures fabricated using the laser-writing patterning technique

    Energy Technology Data Exchange (ETDEWEB)

    Sobolewski, R.; Xiong, W.; Kula, W.; Maung, W.N.; Butler, D.P. [Dept. of Electr. Eng., Rochester Univ., NY (United States)

    1994-05-01

    We report our progress in fabrication of thin-film YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) superconducting electronic devices, using a recently developed, laser-writing patterning technique. Laser writing allows one to form in the same YBCO film planar patterns that consist of both the oxygen-rich (superconducting) and the oxygen-poor (semiconducting) phases. The patterns are highly uniform with very sharp (less than 1 mu m wide) superconductor-semiconductor interfaces. The oxygen-rich regions possess excellent superconducting properties with critical temperatures as high as those of the best epitaxial films, and critical current densities above 2x10{sup 6} A cm{sup -2} at 77 K. Simultaneously, the oxygen-poor regions exhibit a disordered-semiconductor-like, thermally activated transport. Below 100 K, they are almost insulating and characterized by relatively low (below 20) dielectric constant and low microwave loss. A number of test structures, consisting of oxygen-rich and oxygen-poor microbridges and coplanar microwave transmission lines and resonators, was fabricated and tested. All these devices are completely monolithic and were used to study DC and microwave transport properties of the oxygen-rich and oxygen-poor YBCO phases. (author)

  6. Tomographic reconstruction using 4 views and tunable diode laser

    Science.gov (United States)

    Osborn Oliver, M.; T. M., Muruganandam

    2016-11-01

    Called the 'Reduced Back Projection' technique(or RBP), this new method is an improvement on existing tomographic reconstruction techniques in the field of laser diagnostics on a combustor exhaust. The highlight of this technique is the use of only FOUR views to create a planar reconstruction from path averaged data which is obtained from water absorption spectroscopy in the IR region near 1373nm. Water sensitive wavelengths are generated by using a Tunable Diode laser working in the IR region. For the purpose of this paper, work is done on a plane in the exhaust of a burner perpendicular to the flame direction. The geometry of the burner decides the distribution of water molecules in the interrogation plane. This technique is based on the back projection method but has been extensively modified and improved to work with just four views instead of the hundred or so views used in medical tomography. Simulations have been run to check the working of the new technique and compared with other current methods in tomography (SART, back projection, etc..). Preliminary experimentation over a simple two burner geometry has been performed. In both simulation and experiment, the RBP technique has yielded better results than existing methods by virtue of the new method being able to capture features where the other methods have failed. Thus, RBP can be applied to situations where resources, time and spatial constraints exist.

  7. Chlorine Analysis by Diode Laser Atomic Absorption Spectrometry

    Institute of Scientific and Technical Information of China (English)

    Joachim Koch; Aleksandr Zybin; Kay Niemax

    2000-01-01

    The general characteristics of Diode Laser Absorption Spectrometry (DLAAS) in low pressure plasmas particulary with respect to the detection of non-metals are comprehensively recapitulated and discussed. Furthermore, a detector, which is based on DLAAS in a microwave-induced low pressure plasma as an alternative technique for halogene-specific analysis of volatile compounds and polymeric matrices is described. The analytical capability of the technique is demonstrated on the chlorine-specific analysis of ablated polymer fragments as well as gas chromatographically separated hydrocarbons. Since the measurements were carried out by means of a balanced-heterodyne detection scheme, different technical noise contributions, such as laser excess and RAM noise could efficiently be suppressed and the registered absorption was limited only by the principal shot noise. Thus, in the case of the polymer analysis a chlorine-specific absolute detection limit of 10 pg could be achieved. Furthermore, fundamental investigations concerning the influence of hydrocarbons on the dissociation capability of the microwave induced plasma were performed. For this purpose, the carbon-, chlorine-and hydrogen-specific stoichiometry of the compounds were empirically determined. Deviations from the exspected proportions were found to be insignificant, implying the possibility of internal standardization relative to the response of a reference sample.

  8. High power diode laser array development using completely indium free packaging technology with narrow spectrum

    Science.gov (United States)

    Hou, Dong; Wang, Jingwei; Gao, Lijun; Liang, Xuejie; Li, Xiaoning; Liu, Xingsheng

    2016-03-01

    The high power diode lasers have been widely used in many fields. In this work, a sophisticated high power and high performance horizontal array of diode laser stacks have been developed and fabricated with high duty cycle using hard solder bonding technology. CTE-matched submount and Gold Tin (AuSn) hard solder are used for bonding the diode laser bar to achieve the performances of anti-thermal fatigue, higher reliability and longer lifetime. This array consists of 30 bars with the expected optical output peak power of 6000W. By means of numerical simulation and analytical results, the diode laser bars are aligned on suitable positions along the water cooled cooler in order to achieve the uniform wavelength with narrow spectrum and accurate central wavelength. The performance of the horizontal array, such as output power, spectrum, thermal resistance, life time, etc., is characterized and analyzed.

  9. High-Power, High-Efficiency 1.907nm Diode Lasers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — nLight proposes to develop high-power, high-efficiency laser diodes emitting at 1907nm. Performance is expected to improve from the current state-of-the-art...

  10. MEASUREMENT OF AMMONIA EMISSIONS FROM MECHANICALLY VENTILATED POULTRY HOUSES USING MULTIPATH TUNABLE DIODE LASER SPECTROSCOPY

    Science.gov (United States)

    Ammonia emissions from mechanically ventilated poultry operations are an important environmental concern. Open Path Tunable Diode Laser Absorption Spectroscopy has emerged as a robust real-time method for gas phase measurement of ammonia concentrations in agricultural settings. ...

  11. High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lei; Qu, Hongwei; Liu, Yun; Zhang, Yejin; Zheng, Wanhua, E-mail: whzheng@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083 (China); Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083 (China); Wang, Yufei; Qi, Aiyi [Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083 (China)

    2014-12-08

    900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial structure are fabricated. With a same calculated fundamental-mode divergence, stronger mode discrimination is achieved by a quasi-periodic index modulation in the PBC waveguide than a periodic one. Experiments show that the introduction of over 5.5 μm-thick PBC waveguide contributes to only 10% increment of the internal loss for the laser diodes. For broad area PBC lasers, output powers of 5.75 W under continuous wave test and over 10 W under quasi-continuous wave test are reported. The vertical divergence angles are 10.5° at full width at half maximum and 21.3° with 95% power content, in conformity with the simulated angles. Such device shows a prospect for high-power narrow-vertical-divergence laser emission from single diode laser and laser bar.

  12. Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

    Science.gov (United States)

    Damilano, Benjamin; Kim-Chauveau, Hyonju; Frayssinet, Eric; Brault, Julien; Hussain, Sakhawat; Lekhal, Kaddour; Vennéguès, Philippe; De Mierry, Philippe; Massies, Jean

    2013-09-01

    Monolithic InGaN-based light-emitting diodes (LEDs) using a light converter fully grown by metal organic vapor phase epitaxy are demonstrated. The light converter, consisting of 10-40 InGaN/GaN quantum wells, is grown first, followed by a violet pump LED. The structure and growth conditions of the pump LED are specifically adapted to avoid thermal degradation of the light converter. Electroluminescence analysis shows that part of the pump light is absorbed by the light converter and reemitted at longer wavelength. Depending on the emission wavelength of the light converter, different LED colors are achieved. In particular, for red-emitting light converters, a color temperature of 2100 K corresponding to a tint between warm white and candle light is demonstrated.

  13. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-03-03

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  14. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

    Science.gov (United States)

    Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

    2016-08-01

    In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

  15. A monolithically integrated dual-mode laser for photonic microwave generation and all-optical clock recovery

    Science.gov (United States)

    Yu, Liqiang; Zhou, Daibing; Zhao, Lingjuan

    2014-09-01

    We demonstrate a monolithically integrated dual-mode laser (DML) with narrow-beat-linewidth and wide-beat-tunability. Using a monolithic DFB laser subjected to amplified feedback, photonic microwave generation of up to 45 GHz is obtained with higher than 15 GHz beat frequency tunability. Thanks to the high phase correlation of the two modes and the narrow mode linewidth, a RF linewidth of lower than 50 kHz is measured. Simulations are also carried out to illustrate the dual-mode beat characteristic. Furthermore, using the DML, an all-optical clock recovery for 40  Gbaud NRZ-QPSK signals is demonstrated. Timing jitter of lower than 363 fs (integrated within a frequency range from 100 Hz to 1 GHz) is obtained.

  16. High-resolution monitoring of the hole depth during ultrafast laser ablation drilling by diode laser self-mixing interferometry.

    Science.gov (United States)

    Mezzapesa, Francesco P; Ancona, Antonio; Sibillano, Teresa; De Lucia, Francesco; Dabbicco, Maurizio; Lugarà, Pietro Mario; Scamarcio, Gaetano

    2011-03-15

    We demonstrate that diode laser self-mixing interferometry can be exploited to instantaneously measure the ablation front displacement and the laser ablation rate during ultrafast microdrilling of metals. The proof of concept was obtained using a 50-μm-thick stainless steel plate as the target, a 120 ps/110 kHz microchip fiber laser as the machining source, and an 823 nm diode laser with an integrated photodiode as the probe. The time dependence of the hole penetration depth was measured with a 0.41 µm resolution.

  17. Spectrally narrowed external-cavity high-power stack of laser diode arrays.

    Science.gov (United States)

    Zhu, H; Ruset, I C; Hersman, F W

    2005-06-01

    We describe an effective external cavity for narrowing the spectral linewidth of a multiarray stack of laser diode arrays. For a commercially available 279-W free-running five-array laser diode array operating at 60 A, we narrow the spectral linewidth to 0.40 nm at FWHM with 115 W of cw power output. This technique leads to the possibility of higher-efficiency, lower-cost production of hyperpolarized noble gases for magnetic resonance imaging.

  18. Use of diode laser in gingival hyperplasia – a case report

    OpenAIRE

    Papakoca, Kiro; Papakoca, Gordana; Kovacevska, Ivona; Radeska, Ana; Zlatanovska, Katerina

    2016-01-01

    The aim was to remark the indications about diode laser in gingivectomy as an adjunct to nonsurgical periodontal treatment in a subject undergoing fixed prosthodontic treatment with the dental crown. Case report: Initial therapy was full mouth scaling, by hand and ultrasonic instrumentation and oral hygiene instructions. Female patient (39 years old) visited our clinic. Diagnosis was gingival hypertrophy from the 1.3 to 2.3. Patient was advised diode laser gingivectomy ( 810 nm) as ...

  19. Thermal Performance of Laser Diode Array under Constant Convective Heat Transfer Boundary Condition

    Institute of Scientific and Technical Information of China (English)

    YIN Cong; HUANG Lei; HE Fa-Hong; GONG Ma-Li

    2007-01-01

    Three-dimensional heat transfer model of laser diode array under constant convective heat transfer coefficient boundary condition is established and analytical temperature profiles within its heat sink are obtained by separation of variables. The influences on thermal resistance and maximum temperature variation among emitters from heat sink structure parameters and convective heat transfer coefficient are brought forward. The derived formula enables the thermal optimization of laser diode array.

  20. Intraoral diode laser epiglottectomy for treatment of epiglottis chondrosarcoma in a dog.

    Science.gov (United States)

    De Lorenzi, D; Bertoncello, D; Dentini, A

    2015-11-01

    Laryngeal tumours are rare in dogs. Surgery is the treatment of choice, but it is usually palliative in malignant conditions, due to advanced stage of the tumour at the time of diagnosis. In veterinary medicine, little information is available about the use of diode laser in laryngeal oncological surgery. In the case reported here, a dog with an epiglottic chondrosarcoma was successfully treated with diode laser epiglottectomy. The surgical technique and follow up are described.

  1. Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure

    Science.gov (United States)

    Oh, Su Hwan; Lee, Ji-Myon; Kim, Soo; Ko, Hyunsung; Lee, Chul-Wook; Park, Sahnggi; Park, Moon-Ho

    2004-10-01

    We have demonstrated a high-power widely tunable sampled grating (SG) DBR laser integrated monolithically with optical semiconductor amplifier (SOA), using planar buried heterostructure (PBH). The measured threshold current was 5 mA on average with 60 chips randomly selected which is lowest among the typical average values. Fiber-coupled output power was 12.4 dBm and the output power variation was ˜1 dB for the whole tuning range.

  2. AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2014-10-01

    The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

  3. Tunable light source with GaN-based violet laser diode

    Science.gov (United States)

    Omori, Masaki; Mori, Naoki; Dejima, Norihiro

    2013-03-01

    GaN based violet Laser Diode has been applying for the industrial market with unique high potential characters. It has possibility Replacing Gas lasers, Dye Lasers, SHG lasers and Solid-state Lasers and more. Diode based laser extreme small and low costs at the high volume range. In addition GaN Laser has high quality with long lifetime and has possibility to cover the wide wavelength range as between 375 to 520nm. However, in general, diode based laser could only lase with Longitudinal Multi Mode. Therefore applicable application field should be limited and it was difficult to apply for the analysis. Recently, Single Longitudinal Mode laser with GaN diode has also be accomplished with external cavity by Nichia Corporation. External cavity laser achieved at least much higher than 20dB SMSR. The feature of installing laser is that Laser on the front facet with AR coating to avoid chip mode lasing. In general, external cavity laser has been required precision of mechanical assembly and Retention Capability. Nichia has gotten rid of the issue with Intelligence Cavity and YAG Laser welding assembly technique. This laser has also been installed unique feature that the longitudinal mode could be maintained to Single Mode lasing with installing internal functional sensors in the tunable laser.*1,*2 This tunable laser source could lock a particular wavelength optionally between 390 to 465nm wavelength range. As the results, researcher will have benefit own study and it will be generated new market with the laser in the near future.

  4. Laser assisted die bending: a new application of high power diode lasers

    Science.gov (United States)

    Schuöcker, D.; Schumi, T.; Spitzer, O.; Bammer, F.; Schuöcker, G.; Sperrer, G.

    2015-02-01

    Nowadays high power lasers are mainly used for cutting of sheet metals, for welding, hardening and rapid prototyping. In the forming of sheet metals as bending or deep drawing lasers are not used. Nevertheless a few years ago a new application of high power lasers has been invented, where bending of materials that break at room temperature becomes possible by heating them along the bending edge with high power lasers thus allowing their treatment without cracks and rupture. For this purpose a large number of diode lasers are arranged in the bottom tool of a bending machine (a V-shaped die) which heat up the initially flat sheet metal during the bending process what is performed by pressing it into the die with a knife shaped upper tool where due to the laser heating the material is softened and thus cracks are avoided. For the technical realization of the new process of laser assisted die bending, modules equipped with numerous laser diodes and a total beam power of 2,5 kW are used. The light emitted by these modules enters a tool with a length of 15cm and is deflected towards the workpiece. By using ten of these modules with adjacent dies and by integrating those in a bending press a bending edge of sheet metals with a length of 1500mm can be realized. Such a bending press with laser assistance also needs energization with a power of practically 50kW, a respective water flow, a heat exchanger system and also a control for all functions of this system. Special measures have also been developed to avoid radiating of those tools that are not covered by a workpiece in the case of bending edges shorter than the full length of the bending tools whereas individual short circuiting of diode modules can be performed. Specific measures to ensure a safe operation without any harm to the operational person have been realized. Exploitation of the bending process has been carried out for titanium, where material thicknesses up to 3mm have been bent successfully.

  5. Optical components for tailoring beam properties of multi-kW diode lasers

    Science.gov (United States)

    Könning, Tobias; Köhler, Bernd; Wolf, Paul; Bayer, Andreas; Hubrich, Ralf; Bodem, Christian; Plappert, Nora; Kindervater, Tobias; Faßbender, Wilhelm; Dürsch, Sascha; Küster, Matthias; Biesenbach, Jens

    2017-02-01

    One important aspect for the increasing use of diode lasers in industrial applications is the flexibility of diode lasers to tailor the beam properties to the specific needs demanded from the application. For fiber coupled solutions beam shaping with appropriate micro-optical elements is used for efficient fiber coupling of the highly asymmetric diode laser beam, whereas for direct applications optical elements are used to generate specific intensity distributions, like homogenized lines, areas and rings. Applications with diode lasers like solid state laser pump sources often require tailored spectral characteristics with narrow bandwidth, which is realized by using volume Bragg gratings for wavelength stabilization. In this paper we will summarize several concepts for adapting beam properties of diode lasers by using specific optical components. For building very compact laser modules of up to 2 kW we already presented a concept based on beam shaping of high fill factor bars. In this paper we will focus on further tailoring the beam properties of these very compact laser modules in the wavelength range from 808 nm up to 1020 nm. Fiber coupling of such modules into an 800 μm NA0.22 fiber yielded 1.6 kW without using polarization coupling. Another example is the generation of a 2.5 kW homogenized line with 40 mm length and a width of 4 mm.

  6. Promoting Robust Design of Diode Lasers for Space: A National Initiative

    Science.gov (United States)

    Tratt, David M.; Amzajerdian, Farzin; Kashem, Nasir B.; Shapiro, Andrew A.; Mense, Allan T.

    2007-01-01

    The Diode-laser Array Working Group (DAWG) is a national-level consumer/provider forum for discussion of engineering and manufacturing issues which influence the reliability and survivability of high-power broad-area laser diode devices in space, with an emphasis on laser diode arrays (LDAs) for optical pumping of solid-state laser media. The goals of the group are to formulate and validate standardized test and qualification protocols, operational control recommendations, and consensus manufacturing and certification standards. The group is using reliability and lifetime data collected by laser diode manufacturers and the user community to develop a set of standardized guidelines for specifying and qualifying laser diodes for long-duration operation in space, the ultimate goal being to promote an informed U.S. Government investment and procurement strategy for assuring the availability and durability of space-qualified LDAs. The group is also working to establish effective implementation of statistical design techniques at the supplier design, development, and manufacturing levels to help reduce product performance variability and improve product reliability for diodes employed in space applications

  7. An in vitro antifungal efficacy of silver nanoparticles activated by diode laser to Candida albicans

    Science.gov (United States)

    Astuti, S. D.; Kharisma, D. H.; Kholimatussa'diah, S.; Zaidan, A. H.

    2017-09-01

    Microbial infectious diseases and increased resistance to antibiotics become urgent problems requiring immediate solutions. One promising alternative is the using of silver nanoparticles. The combination of the microbial inhibition characteristic of silver nanotechnology enhances the activity of antimicrobial effect. This study aims to determine effectiveness of antifungal silver nanoparticles with the activation of the diode laser on Candida albicans. The samples were culture of Candida albicans. Candida albicans cultures were incubated with silver nanoparticles (concentration 10-4 M) and treated with various exposure time of diode laser (15, 30, 45, 60, 75, 90)s. The suspension was planted on Sabouraud Dextrone Agar sterile media and incubated for 24 hours at temperature of 37oC. The number of colony-forming units per milliliter (CFU/ml) was determined after incubation. The results were log-transformed and analyzed by analysis of variance (ANOVA). In this analysis, P value ≤0.05 was considered to indicate a statistically significant difference. The result of this study showed the quantum yield of silver nanoparticles with diode laser 450 nm was 63,61%. Irradiating with diode laser 450 nm for 75 s resulted in the highest decreasing percentage of Candida albicans viability 65,03%. Irradiating with diode laser 450 nm 75 s with silver nanoparticles resulted in the higest decreasing percentage of Candida albicans viability 84,63%. Therefore, silver nanoparticles activated with diode laser irradiation of 450 nm resulted antifungal effect to Candida albicans viability.

  8. Comparison of effects of diode laser and CO2 laser on human teeth and their usefulness in topical fluoridation.

    Science.gov (United States)

    González-Rodríguez, Alberto; de Dios López-González, Juan; del Castillo, Juan de Dios Luna; Villalba-Moreno, Juan

    2011-05-01

    Various authors have reported more effective fluoridation from the use of lasers combined with topical fluoride than from conventional topical fluoridation. Besides the beneficial effect of lasers in reducing the acid solubility of an enamel surface, they can also increase the uptake of fluoride. The study objectives were to compare the action of CO(2) and GaAlAs diode lasers on dental enamel and their effects on pulp temperature and enamel fluoride uptake. Different groups of selected enamel surfaces were treated with amine fluoride and irradiated with CO(2) laser at an energy power of 1 or 2 W or with diode laser at 5 or 7 W for 15 s each and compared to enamel surfaces without treatment or topical fluoridated. Samples were examined by means of environmental scanning electron microscopy (ESEM). Surfaces of all enamel samples were then acid-etched, measuring the amount of fluoride deposited on the enamel by using a selective ion electrode. Other enamel surfaces selected under the same conditions were irradiated as described above, measuring the increase in pulp temperature with a thermocouple wire. Fluorination with CO(2) laser at 1 W and diode laser at 7 W produced a significantly greater fluoride uptake on enamel (89 ± 18 mg/l) and (77 ± 17 mg/l) versus topical fluoridation alone (58 ± 7 mg/l) and no treatment (20 ± 1 mg/l). Diode laser at 5 W produced a lesser alteration of the enamel surface compared to CO(2) laser at 1 W, but greater pulp safety was provided by CO(2) laser (ΔT° 1.60° ± 0.5) than by diode laser (ΔT° 3.16° ± 0.6). Diode laser at 7 W and CO(2) laser at 2 W both caused alterations on enamel surfaces, but great pulp safety was again obtained with CO(2) (ΔT° 4.44° ± 0.60) than with diode (ΔT° 5.25° ± 0.55). Our study demonstrates that CO(2) and diode laser irradiation of the enamel surface can both increase fluoride uptake; however, laser energy parameters must be carefully

  9. Complicações na dacriocistorrinostomia transcanalicular com laser diodo: complications Transcanalicular dacryocystorhinostomy with diode laser

    Directory of Open Access Journals (Sweden)

    Eduardo Alonso Garcia

    2009-08-01

    Full Text Available OBJETIVO: Analisar as complicações da aplicação do laser de diodo para o tratamento da obstrução nasolacrimal adquirida. MÉTODOS: Foram realizados 44 procedimentos (dacriocistorrinostomia transcanalicular com laser de diodo com intubação bicanalicular de silicone sob anestesia local entre fevereiro de 2002 a novembro de 2007 em 41 pacientes (3 bilateralmente, sendo 32 mulheres e 9 homens. RESULTADOS: As complicações mais frequentes no intraoperatório foram: dificuldade de passar a sonda de Crawford (13,6% e passagem da fibra óptica dificultada (11,3%. No pós-operatório, a epífora foi a ocorrência mais frequente (15,9%, seguida pela retirada acidental do silastic (11,3%. CONCLUSÃO: Os índices de complicações intra e pós-operatórias se equivalem aos artigos publicados com a mesma técnica cirúrgica (e mesmo tipo de laser.PURPOSE: To evaluate the complications of the use of diode laser in the treatment of acquired nasolacrimal obstruction. METHODS: Forty four procedures (transcanalicular dacryocystorhinostomy with diode laser with bicanalicular silicone tube intubation and local anesthesia where performed from February 2002 to November 2007 in 41 patients (3 bilaterally, 32 women and 9 men. RESULTS: The most common intraoperative complications were disability to pass the Crawford probe (13.6% and the laser probe (11.3%. Regarding postoperative complications, epiphora was the event of higher frequency (15.9% followed by the non-intentional silastic extrusion by the patient (11.3%. CONCLUSION: Intraoperative and postoperative complications rate were similar of others articles that demonstrated the same surgical technique (with same laser.

  10. Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael

    2013-01-01

    We report the realization of a tapered diode laser operated in a coupled ring cavity that significantly improves the coherence properties of the tapered laser and efficiently generates tunable light at the second harmonic frequency. The tapered diode laser is tunable with single-frequency output...... frequency doubling. More than 500 mW green output power is obtained by placing a periodically poled LiNbO3 crystal in the external cavity. The single frequency green output from the laser system is tunable in the 530 nm to 533 nm range limited by the LiNbO3 crystal. The optical to optical conversion...

  11. The analytical investigation of temperature distribution in off-central diode-pumped lasers

    Indian Academy of Sciences (India)

    P Ealhi; A Taghavi; A Gharaati

    2008-04-01

    The influence of displacement of the pump source with respect to the crystal center on the thermal behavior of the laser crystal is studied analytically. We consider the pump energy to be deposited into the pump region which has been slightly displaced with respect to the crystal center. An analytical expression for temperature distribution for such off-central diode-pumped laser is investigated. The results are then applied to the Nd :YAG and Nd :YVO4 laser crystals and compared with the conventional diode-pumped lasers. We showed that in this special case, the temperature distribution equation in the off-central pumping convert to the conventional central pump scheme.

  12. High-Power Continuous-Wave Directly-Diode-Pumped Fiber Raman Lasers

    Directory of Open Access Journals (Sweden)

    Tianfu Yao

    2015-11-01

    Full Text Available We describe novel fiber Raman lasers pumped directly by spectrally combined high power multimode laser diodes at 975 nm and emitting at 1019 nm. With a commercial multimode graded-index fiber, we reached 20 W of laser output power with a record slope efficiency of 80%. With an in-house double-clad fiber, the beam quality improved to M2 = 1.9, albeit with lower output power and slope efficiency due to higher fiber loss. We believe this is the first publication of a fiber Raman laser cladding-pumped directly by diodes.

  13. High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

    Science.gov (United States)

    Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

    1988-01-01

    A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

  14. Spatial Combining of Laser-Diode Beams for Pumping an NPRO

    Science.gov (United States)

    Gelsinger, Paul; Liu, Duncan; Mulder, Jerry; Aguayo, Francisco

    2008-01-01

    A free-space optical beam combiner now undergoing development makes it possible to use the outputs of multiple multimode laser diodes to pump a neodymium-doped yttrium aluminum garnet (Nd:YAG) non-planar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, a Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained in this article, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. To minimize coupling loss, one must ensure that the NA (approximately equal to 0.3) of the combined laser-diode beams is less than the NA of the fiber. The A(Omega) of the laser-diode beam in the slow-axis plane is 1/1.3 as large as that of the fiber. This A(Omega) is small enough to enable efficient coupling of light into the optical fiber, but too large for combining of beams in the slow-axis plane. Therefore, a pair of cylindrical lenses is used to cancel the slow-axis plane magnification introduced by the on-cylindrical lenses used to effect magnification in the fast-axis plane.

  15. Beam shaping design for coupling high power diode laser stack to fiber.

    Science.gov (United States)

    Ghasemi, Seyed Hamed; Hantehzadeh, Mohammad-Reza; Sabbaghzadeh, Jamshid; Dorranian, Davoud; Lafooti, Majid; Vatani, Vahid; Rezaei-Nasirabad, Reza; Hemmati, Atefeh; Amidian, Ali Asghar; Alavian, Seyed Ali

    2011-06-20

    A beam shaping technique that rearranges the beam for improving the beam symmetry and power density of a ten-bar high power diode laser stack is simulated considering a stripe mirror plate and a V-Stack mirror in the beam shaping system. In this technique, the beam of a high power diode laser stack is effectively coupled into a standard 550 μm core diameter and a NA=0.22 fiber. By this technique, compactness, higher efficiency, and lower cost production of the diode are possible.

  16. Monolithic series-connected gallium arsenide converter development

    Energy Technology Data Exchange (ETDEWEB)

    Spitzer, M.B.; McClelland, R.W.; Dingle, B.D.; Dingle, J.E.; Hill, D.S. (Kopin Corp., Taunton, MA (United States)); Rose, B.H. (Sandia National Labs., Albuquerque, NM (United States))

    1991-01-01

    We report the development of monolithic GaAs photovoltaic devices intended to convert light generated by a laser or other bright source to electricity. The converters described here can provide higher operating voltage than is possible using a single-junction converter, owing to use of a monolithic circuit that forms a planar series-connected string of single-junction sub-cells. This planar monolithic circuit is arranged to deliver the desired voltage and current during operation at the maximum power point. The paper describes two-, six-, and twelve-junction converters intended for illumination by a laser diode with a wavelength of 0.8 {mu}m. Design and characterization data are presented for optical power in the range of 100 mW to 1 W. The best conversion efficiency exceeds 50%. 9 refs., 4 figs., 2 tabs.

  17. High-Power and Low-Noise 10-GHz All-Active Monolithic Mode-Locked Lasers with Surface Etched Bragg Grating

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2007-01-01

    We have fabricated 4.4 mm long monolithic InAlGaAsP/InP mode-locked lasers with integrated deeply surface etched DBR-mirrors. The lasers produce 3.7 ps transform-limited Gaussian pulses with 10 mW average power and 250 fs timing jitter.......We have fabricated 4.4 mm long monolithic InAlGaAsP/InP mode-locked lasers with integrated deeply surface etched DBR-mirrors. The lasers produce 3.7 ps transform-limited Gaussian pulses with 10 mW average power and 250 fs timing jitter....

  18. A Laser-Diode-Pumped Widely Tunable Single-Longitude-Mode Tm:YAP Laser at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    LI Yu-Feng; JU You-Lun; YAO Bao-Quan; WANG Yue-Zhu; Sergii Ubizskii

    2007-01-01

    A laser-diode-pumped widely tunable single-longitude-mode Tm:YAP laser in 2μm eye-safe region is built. Continuous tunable range from 1899nm to 2025nm is achieved with the maximum laser output power of 225 m W at 1989nm. In addition, the Tm:YAP laser operating under multimode and single-mode conditions is discussed.

  19. Diffractive Combiner of Single-Mode Pump Laser-Diode Beams

    Science.gov (United States)

    Liu, Duncan; Wilson, Daniel; Qiu, Yueming; Forouhar, Siamak

    2007-01-01

    An optical beam combiner now under development would make it possible to use the outputs of multiple single-mode laser diodes to pump a neodymium: yttrium aluminum garnet (Nd:YAG) nonplanar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, an Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained below, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. Figure 1 schematically illustrates the principle of operation of a laser-diode-pumped Nd:YAG NPRO. The laser beam path is confined in a Nd:YAG crystal by means of total internal reflections on the three back facets and a partial-reflection coating on the front facet. The wavelength of the pump beam - 808 nm - is the wavelength most strongly absorbed by the Nd:YAG crystal. The crystal can lase at a wavelength of either 1,064 nm or 1,319 nm - which one depending on the optical coating on the front facet. A thermal lens effect induced by the pump beam enables stable lasing in the lowest-order transverse electromagnetic mode (the TEM00 mode). The frequency of this laser is very stable because of the mechanical stability of the laser crystal and the unidirectional nature of the lasing. The unidirectionality is a result of the combined effects of (1) a Faraday rotation induced by an externally applied magnetic field and (2) polarization associated with non-normal incidence and reflection on the front facet.

  20. A low-temperature external cavity diode laser for broad wavelength tuning

    CERN Document Server

    Tobias, William G; Hutzler, Nicholas R; Ni, Kang-Kuen

    2016-01-01

    We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to -64{\\deg}C, more than 85{\\deg}C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation was achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers ...

  1. Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode

    Science.gov (United States)

    Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

    2015-11-01

    Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

  2. Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode.

    Science.gov (United States)

    Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

    2015-11-16

    Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

  3. Rapid and broad wavelength sweeping of standard telecommunication distributed feedback laser diode.

    Science.gov (United States)

    Njegovec, Matej; Donlagic, Denis

    2013-06-01

    This Letter presents a method for the fast and broad wavelength sweeping of a standard setup of a diode's active region and its immediate vicinity, which contain the diode's optical feedback system. The selective and rapid heating of the active region is possible due to the confinement of the voltage drop to the active diode's region that has submicrometer thickness. Using the presented method and an off-the-shelf telecommunication distributed feedback laser diode, we demonstrate wavelength sweeps in excess of 10 nm that were completed in about 200 ns, while generating average optical power in excess of 50 mW. In spite of high-amplitude current-drive pulses, 6000 h continuous operation of the diode within such an operational regime did not show any significant degradation of the diode's performance.

  4. A study of the physical mechanisms involved during transient irradiation of a 1300 nm laser diode; Etude des phenomenes physiques mis en jeu lors de l'irradiation transitoire d'une diode laser a 1300 nm

    Energy Technology Data Exchange (ETDEWEB)

    Pailharey, E.; Baggio, J.; D' hose, C.; Musseau, O. [CEA Bruyeres-le-Chatel, DIF, 91 (France)

    1999-07-01

    New phenomena increasing the time necessary to return to steady state are observed for 1300 nm laser diode submitted to transient irradiation. The origin of this effect is found in the laser diode structure. It is shown that the presence of quantum wells in the structure of the laser cavity and the diffusion of the charge carriers that are generated around the cavity, slow down the return to equilibrium of the diode. (A.C.)

  5. Narrow-line diode laser system for laser cooling of strontium atoms on the intercombination transition

    Science.gov (United States)

    Li, Y.; Ido, T.; Eichler, T.; Katori, H.

    We report a diode laser system developed for narrow-line cooling and trapping on the 1S0-3P1 intercombination transition of neutral strontium atoms. Doppler cooling on this spin-forbidden transition with a line width of Γ/2π=7.1 kHz enables us to achieve sub-μK temperatures in a two-step cooling process. The required reduction of the laser line width to the kHz level was achieved by locking the laser to a tunable Fabry-Pérot cavity. The long-term drift (>0.1 s) of the reference cavity was compensated by employing the saturated absorption signal obtained from Sr vapor in a heat pipe of novel design. We demonstrate the potential of the system by performing spectroscopy of Sr atoms confined to the Lamb-Dicke regime in a one-dimensional optical lattice.

  6. Diode-pumped Q-switched Nd{sup 3+} : YAG laser operating in a wide temperature range without thermal stabilisation of pump diodes

    Energy Technology Data Exchange (ETDEWEB)

    Vainshenker, A E; Vilenskiy, A V; Kazakov, A A; Lysoy, B G; Mikhailov, L K; Pashkov, V A [Open Joint-Stock Company ' M.F. Stel' makh Polyus Research and Development Institute' , Moscow (Russian Federation)

    2013-02-28

    A model sample of a compact low-power-consumption Nd{sup 3+} : YAG laser emitting 20-mJ pulses with a pulse repetition rate up to 20 Hz (in cyclic duty) at a wavelength of 1064 nm is developed and studied. The laser is designed for operating at external temperatures from -40 to +50 deg C. This was achieved by using quasi-end diode pumping without thermal stabilisation of pump diodes. (laser optics 2012)

  7. Diode laser soft-tissue surgery: advancements aimed at consistent cutting, improved clinical outcomes.

    Science.gov (United States)

    Romanos, Georgios E

    2013-01-01

    Laser dentistry and soft-tissue surgery, in particular, have become widely adopted in recent years. Significant cost reductions for dental lasers and the increasing popularity of CADCAM, among other factors, have contributed to a substantial increase in the installed base of dental lasers, especially soft-tissue lasers. New development in soft-tissue surgery, based on the modern understanding of laser-tissue interactions and contact soft-tissue surgery mechanisms, will bring a higher quality and consistency level to laser soft-tissue surgery. Recently introduced diode-laser technology enables enhanced control of side effects that result from tissue overheating and may improve soft-tissue surgical outcomes.

  8. Diode-pumped tunable laser with dual Cri:LiSAF rods

    Institute of Scientific and Technical Information of China (English)

    Xie Guo-Qiang; Wang Tao; Zhu He-Yuan; Qian Lie-Jia

    2006-01-01

    We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr:LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser rods and is designed by using two "X" folding cavities in cascade. A tunable laser output of ~ 180 mW has been achieved with the pump of single-striped laser diodes. Compared with lasers using single gain rod, the laser with dual rods shows less severe thermal effect and increases the output by more than two times.

  9. Laser emission from diode-pumped Nd:YAG ceramic waveguide lasers realized by direct femtosecond-laser writing technique.

    Science.gov (United States)

    Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian; Pavel, Nicolaie

    2014-03-10

    We report on realization of buried waveguides in Nd:YAG ceramic media by direct femtosecond-laser writing technique and investigate the waveguides laser emission characteristics under the pump with fiber-coupled diode lasers. Laser pulses at 1.06 μm with energy of 2.8 mJ for the pump with pulses of 13.1-mJ energy and continuous-wave output power of 0.49 W with overall optical efficiency of 0.13 were obtained from a 100-μm diameter circular cladding waveguide realized in a 0.7-at.% Nd:YAG ceramic. A circular waveguide of 50-μm diameter yielded laser pulses at 1.3 μm with 1.2-mJ energy.

  10. Temperature evaluation of dental implant surface irradiated with high-power diode laser.

    Science.gov (United States)

    Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

    2016-09-01

    The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.

  11. Diode-pumped double passively Q-switched Nd:GdVO4 laser

    Institute of Scientific and Technical Information of China (English)

    LIU Min; LIU Shu-shan; LI Lei; WANG Wei-wei; CHEN Fei; LIU Jie

    2008-01-01

    Through using both Cr4+:YAG and GaAs saturable absorbers, a diode-pumped double passively Q-switched Nd:GdVO4 laser is realized and compared with a single passively Q-switched laser. This laser can generate symmetric pulse temporal profiles and shorter pulses. A laser pulse width of 17 ns has been achieved with the incident pump power of 8.5 W.

  12. Femtosecond laser pumped by high-brightness coherent polarization locked diodes.

    Science.gov (United States)

    Purnawirman; Phua, P B

    2011-08-01

    We demonstrate, for the first time to our knowledge, the use of a coherent polarization locked diode as the high-brightness pump source for a femtosecond laser. Four diode emitters are coherently locked to produce more than 5 W linearly polarized, narrow linewidth, and single-lobed pump beam. This gives >10× brightness improvement over the conventional diode array. The diode beam is then used to pump a Yb:KYW laser to obtain 2 W output with 57% slope efficiency in cw laser operation. By using a saturable absorber mirror, we achieved cw mode-locking operation with a 177 fs pulse width at an average power of 0.55 W.

  13. PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

    Directory of Open Access Journals (Sweden)

    D. A. Arkhipov

    2015-11-01

    Full Text Available Subject of Research. Thermophysical and optical techniques of parameter regulation for diode pumped solid-state laser are studied as applied to space laser communication and laser ranging lines. Methods. The investigations are carried out on the base of the original design of diode pumped solid-state laser module that includes the following: Nd:YAG slab element, diode pumped by 400W QCW produced by NORTHROP GRUMMAN; two-pass unstable resonator with rotation of the laser beam aperture about its axis through 1800; the output mirror of the resonator with a variable reflection coefficient; hyperthermal conductive plates for thermal stabilization of the laser diode generation modes. The presence of thermal conductive plates excludes conventional running water systems applied as cooling systems for solid-state laser components. The diodes temperature stabilization is achieved by applying the algorithm of pulse-width modulation of power of auxiliary electric heaters. To compensate for non-stationary thermal distortions of the slab refractive index, the laser resonator scheme comprises a prism reflector with an apex angle of 1200. Narrow sides of the prism are covered with reflective coating, and its wide side is sprayed with antireflection coating. The beam aperture is turned around its axis through 1800 because of triple reflection of the beam inside the prism. The turning procedure leads to compensating for the output beam phase distortions in view of symmetric character of the aberrations of slab refractive index. To suppress parasitic oscillations inside the slab, dielectric coatings of wide sides of the slab are used. Main Results. We have demonstrated theoretically and experimentally that the usage of hyperthermal conductive plates together with the algorithm of pulse-width modulation provides stabilizing of the diode substrate temperature accurate within ± 0.1 °С and smoothing the temperature distribution along the plate surface accurate

  14. The Versatility of 980 nm Diode Laser in Dentistry: A Case Series.

    Science.gov (United States)

    Derikvand, Nahid; Chinipardaz, Zahra; Ghasemi, Sara; Chiniforush, Nasim

    2016-01-01

    Introduction: Laser surgery has been considered a popular alternative over conventional modalities in dentistry during the last few years. Among different types of lasers, diode lasers have gained special attention in oral soft tissue surgery. Case Reports: Five patients were referred to a private office. After careful evaluation of medical history and oral examination, oral diagnosis and treatment plan of each patient was established as follows: (1) A 21-year-old female with ankyloglossia (tongue-tie); (2) A 65-year-old female with a poor denture fit needing vestibuloplasty and frenectomy; (3) A 10-year-old male patient with pigmented gingiva in mandible and maxilla; (4) A 14-year-old female needing exposure of maxillary right canine for bracket bonding; and (5) A 25-year-old female patient who has a gingival maxillary frenum with a nodule. The treatment plan for all the patients was laser surgery with diode laser at 980 nm, in continuous mode. Results: All the patients experienced normal healing process with no postoperative complications. Favorable outcomes of laser surgery were observed on follow-up sessions. Conclusion: Considering the versatility of the 980 nm diode laser in oral soft tissue surgeries and the advantages of laser surgery, this study suggests the use of 980 nm diode laser in this regard.

  15. The Versatility of 980 nm Diode Laser in Dentistry: A Case Series

    Science.gov (United States)

    Derikvand, Nahid; Chinipardaz, Zahra; Ghasemi, Sara; Chiniforush, Nasim

    2016-01-01

    Introduction: Laser surgery has been considered a popular alternative over conventional modalities in dentistry during the last few years. Among different types of lasers, diode lasers have gained special attention in oral soft tissue surgery. Case Reports: Five patients were referred to a private office. After careful evaluation of medical history and oral examination, oral diagnosis and treatment plan of each patient was established as follows: (1) A 21-year-old female with ankyloglossia (tongue-tie); (2) A 65-year-old female with a poor denture fit needing vestibuloplasty and frenectomy; (3) A 10-year-old male patient with pigmented gingiva in mandible and maxilla; (4) A 14-year-old female needing exposure of maxillary right canine for bracket bonding; and (5) A 25-year-old female patient who has a gingival maxillary frenum with a nodule. The treatment plan for all the patients was laser surgery with diode laser at 980 nm, in continuous mode. Results: All the patients experienced normal healing process with no postoperative complications. Favorable outcomes of laser surgery were observed on follow-up sessions. Conclusion: Considering the versatility of the 980 nm diode laser in oral soft tissue surgeries and the advantages of laser surgery, this study suggests the use of 980 nm diode laser in this regard. PMID:28144444

  16. Evaluation of Direct Diode Laser Deposited Stainless Steel 316L on 4340 Steel Substrate for Aircraft Landing Gear Application

    Science.gov (United States)

    2010-03-01

    AFRL-RX-WP-TP-2010-4149 EVALUATION OF DIRECT DIODE LASER DEPOSITED STAINLESS STEEL 316L ON 4340 STEEL SUBSTRATE FOR AIRCRAFT LANDING GEAR...March 2010 – 01 March 2010 4. TITLE AND SUBTITLE EVALUATION OF DIRECT DIODE LASER DEPOSITED STAINLESS STEEL 316L ON 4340 STEEL SUBSTRATE FOR...Code) N/A Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39-18 Evaluation of Direct Diode Laser Deposited Stainless Steel 316L on

  17. In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth

    Directory of Open Access Journals (Sweden)

    Zahra Bahrololoomi

    2016-04-01

    Full Text Available Objectives: Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth.Materials and Methods: Forty human primary molars were randomly assigned to four groups (n=10. The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates.Results: The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005. There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard.Conclusion: The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake.

  18. Optical humidity detection based on tunable diode laser absorption spectroscopy

    Science.gov (United States)

    Zhang, Keke; Liu, Shixuan; Chen, Shizhe; Zhao, Qiang; Zhang, Lijuan; Li, Xuanqun; Wang, Wenyan; Wu, Yushang

    2017-02-01

    Humidity is an important environmental parameter, which is difficult to be measured accurately and quickly using traditional measurement methods. Under the environment of low temperature or high humidity, traditional humidity and temperature sensor has shortages in humidity measurement accuracy, corresponding time and wet fade speed. To solve these problems, this paper proposes a method to measure the environmental humidity with wavelength modulation technology and harmonic detection technology based on tunable diode laser absorption spectroscopy. H2O molecular absorption line near 1392 nm is selected as the characteristic spectra. The effects of temperature, pressure and water concentration on the absorption spectrum width, the wavelength modulation coefficient and the amplitude of the harmonic signal are analyzed. Humidity and temperature sensor is modified using temperature and pressure compensation model, and the influence of the water concentration variation is eliminated by the iterative algorithm. The new humidity and temperature sensor prototype is developed, and the structure of the optical system is simple, which is easy to be adjusted. The response frequency of the humidity detection is 40 Hz. The experiment was carried out for 3 months at Qingdao national basic weather station. Experimental results show that the consistency of the humidity and temperature data is very good, which can proves the validity of the humidity measurement technology.

  19. Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

    Science.gov (United States)

    Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

    2016-03-01

    The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

  20. High energy diode-pumped solid-state laser development at the Central Laser Facility

    Science.gov (United States)

    Mason, Paul D.; Banerjee, Saumyabrata; Ertel, Klaus; Phillips, P. Jonathan; Butcher, Thomas; Smith, Jodie; De Vido, Mariastefania; Chekhlov, Oleg; Hernandez-Gomez, Cristina; Edwards, Chris; Collier, John

    2016-04-01

    In this paper we review the development of high energy, nanosecond pulsed diode-pumped solid state lasers within the Central Laser Facility (CLF) based on cryogenic gas cooled multi-slab ceramic Yb:YAG amplifier technology. To date two 10J-scale systems, the DiPOLE prototype amplifier and an improved DIPOLE10 system, have been developed, and most recently a larger scale system, DiPOLE100, designed to produce 100 J pulses at up to 10 Hz. These systems have demonstrated amplification of 10 ns duration pulses at 1030 nm to energies in excess of 10 J at 10 Hz pulse repetition rate, and over 100 J at 1 Hz, with optical-to-optical conversion efficiencies of up to 27%. We present an overview of the cryo-amplifier concept and compare the design features of these three systems, including details of the amplifier designs, gain media, diode pump lasers and the cryogenic gas cooling systems. The most recent performance results from the three systems are presented along with future plans for high energy DPSSL development within the CLF.