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Sample records for monolithic integrated switches

  1. Development and fabrication of monolithically integrated optical packet switches

    Science.gov (United States)

    Yanson, Dan A.; Silver, Mark; Vassalli, Omar; Campbell, Margaret; Masterton, Graeme; McDougall, Stewart D.; Marsh, John H.

    2007-02-01

    We report development activities towards realization of fully integrated 1x2, 2x2, and 4x4 cross-point optical switches for WDM-packet-based data networking. Two enabling technologies, quantum-well intermixing and etched turning mirrors, are developed and demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 μm. We describe the use of both technologies to fabricate switch chips with different port counts.

  2. Monolithically integrated 4x4 SOA switch fabricated using quantum well intermixing

    Science.gov (United States)

    Millett, Ronald; Hinzer, Karin; Hall, Trevor; Poirier, Maxime; Schriemer, Henry

    2009-02-01

    Monolithically-integrated semiconductor optical amplifiers (SOAs) have the potential for enabling high-speed and low-crosstalk optical switches in reconfigurable optical add-drop multiplexers (ROADMs). Using integrated 4x4 switches as the building blocks for large-scale ROADMs, instead of 2x2 switches, will reduce alignment issues and assembly steps during manufacturing. The switch is based on SOAs, quantum well intermixed (QWI) passive 1x4 MMI splitters/combiners, and total internal reflection mirrors. We present the results of the 4x4 switch design, for a switch of 5.3 mm x 3.5 mm in size, with estimated total excess on-chip losses of 23 dB.

  3. A Monolithically Integrated 12V/5V Switch-Capacitor DC-DC Converter

    Institute of Scientific and Technical Information of China (English)

    耿莉; 陈治明; 刘先锋

    2000-01-01

    A monolithically integrated 12V/SV switch capacitor DC-DC converter with structure-simplified main circuit and control circuit is presented. Its topological circuit and basic operating principle are discussed in detail. It is shown that elevated operating frequency, increased capacitance and reduced turn-on voltage of the diodes can make the converter's output characteristics improved. Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher. As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial-parallel capacitance is optimized for the maximum output power. The device selection and its fabrication method are presented. A feasible integration process and its corresponding layout are designed. All active devices including switching transistors and diodes are integrated together with all passive cells including capacitors and resistor on a single chip based on BiMOS process,as has been verified to be correct and practical by simulation and chip test.

  4. Monolithic microwave integrated circuits

    Science.gov (United States)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  5. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  6. Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.

    Science.gov (United States)

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi

    2013-07-01

    We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

  7. Monolithically integrated optoelectronic down-converter (MIOD)

    Science.gov (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  8. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    Science.gov (United States)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  9. Reconfigurable optical switches with monolithic electrical-to-optical interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, J.; Zhou, P. [New Mexico Univ., Albuquerque, NM (United States). Center for High Technology Materials; Zolper, J.C.; Lear, K.L.; Vawter, G.A. [Sandia National Labs., Albuquerque, NM (United States); Leibenguth, R.E.; Adams, A.C. [AT and T Bell Labs., Breinigsville, PA (United States)

    1994-03-01

    Vertical cavity surface-emitting lasers (VCSELs) can be integrated with heterojunction phototransistors (HPTs) and heterojunction bipolar transistors (HBTs) on the same wafer to form high speed optical and optoelectronic switches, respectively, that can be optically or electrically addressed. This permits the direct communication and transmission of data between distributed electronic processors through an optical switching network. The experimental demonstration of an integrated optoelectronic HBT/VCSEL switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a VCSEL is described below, using the same epilayer structure upon which binary HPT/VCSEL optical switches are also built. The monolithic HBT/VCSEL switch has high current gain, low power dissipation, and a high optical to electrical conversion efficiency. Its modulation has been measured and modeled.

  10. Planar, monolithically integrated coil

    NARCIS (Netherlands)

    Roozeboom, F.; Reefman, D.; Klootwijk, J.H.; Tiemeijer, L.F.; Ruigrok, J.

    2013-01-01

    The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for

  11. CMOS integrated switching power converters

    CERN Document Server

    Villar-Pique, Gerard

    2011-01-01

    This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and effi

  12. Monolithically integrated absolute frequency comb laser system

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  13. Monolithically integrated Ge CMOS laser

    Science.gov (United States)

    Camacho-Aguilera, Rodolfo

    2014-02-01

    Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm2. Improvements in Ge work

  14. Monolithic Time Delay Integrated APD Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The overall goal of the proposed program by Epitaxial Technologies is to develop monolithic time delay integrated avalanche photodiode (APD) arrays with sensitivity...

  15. A monolithic integrated photonic microwave filter

    Science.gov (United States)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2016-12-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  16. A monolithically integrated torsional CMOS-MEMS relay

    Science.gov (United States)

    Riverola, M.; Sobreviela, G.; Torres, F.; Uranga, A.; Barniol, N.

    2016-11-01

    We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the k Ω -range throughout the on-off cycling test.

  17. Monolithically integrated interferometer for optical displacement measurement

    Science.gov (United States)

    Hofstetter, Daniel; Zappe, Hans P.

    1996-01-01

    We discuss the fabrication of a monolithically integrated optical displacement sensors using III-V semiconductor technology. The device is configured as a Michelson interferometer and consists of a distributed Bragg reflector laser, a photodetector and waveguides forming a directional coupler. Using this interferometer, displacements in the 100 nm range could be measured at distances of up to 45 cm. We present fabrication, device results and characterization of the completed interferometer, problems, limitations and future applications will also be discussed.

  18. Monolithic Integration of GaN-based LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, University of Tokushima 2-1 Minami-Josanjima, Tokushima 770-8506 (Japan)

    2011-02-01

    The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for high-voltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.

  19. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    Science.gov (United States)

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  20. Integrated photonic switches for nanosecond packet-switched optical wavelength conversion

    Science.gov (United States)

    Fidaner, Onur; Demir, Hilmi Volkan; Sabnis, Vijit A.; Zheng, Jun-Fei; Harris, James S., Jr.; Miller, David A. B.

    2006-01-01

    We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.

  1. Design of Monolithic Integrator for Strain-to-Frequency Converter

    Directory of Open Access Journals (Sweden)

    Tuan Mohd. Khairi Tuan Mat

    2012-01-01

    Full Text Available Strain-to-Frequency converter (SFC is a one of the analog conditioner tools that converts any strain signal to the frequency signal. The basic concept of SFC is by detecting any changing of strains, then converting the strain to the voltage signal and converting the voltage signal to the frequency signal. This tool consists of 3 main  components which are strain gauge, differential integrator and comparator. This paper presents the designing and analysis of monolithic integrator that to be used in the Strain-toFrequency converter. The primary goal is to design and simulate the performance of monolithic integrator for SFC using GATEWAY Silvaco Electronic Design Automation (S EDA tools and EXPERT software. The performances of SFC using the designed monolithic integrator are also investigated.

  2. A bit-rate flexible and power efficient all-optical demultiplexer realised by monolithically integrated Michelson interferometer

    DEFF Research Database (Denmark)

    Vaa, Michael; Mikkelsen, Benny; Jepsen, Kim Stokholm;

    1996-01-01

    A novel bit-rate flexible and very power efficient all-optical demultiplexer using differential optical control of a monolithically integrated Michelson interferometer with MQW SOAs is demonstrated at 40 to 10 Gbit/s. Gain switched DFB lasers provide ultra stable data and control signals....

  3. Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics

    Science.gov (United States)

    Wood, Thomas H.

    1988-05-01

    Semiconductor MQWs represent a new technology for opto-electronics. These MQWs have an electroabsorption effect approximately 50 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  4. Monolithically Integrated Ge-on-Si Active Photonics

    OpenAIRE

    Jifeng Liu

    2014-01-01

    Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In this paper, we present a review of the recent progress in Ge-on...

  5. Hybrid and monolithic integration of planar lightwave circuits (PLCs)

    Science.gov (United States)

    Chen, Ray T.

    2008-02-01

    In this paper, we review the status of monolithic and hybrid integration of planar lightwave circuits (PLCs). Building blocks needed for system integration based on polymeric materials, III-V semiconductor materials, LiNbO 3 and SOI on Silicon are summarized with pros and cons. Due to the maturity of silicon CMOS technology, silicon becomes the platform of choice for optical application specific integrated circuits (OASICs). However, the indirect bandgap of silicon makes the formation of electrically pumped silicon laser a remote plausibility which requires hybrid integration of laser sources made out of III-V compound semicouductor.

  6. Affinity Monolith-Integrated Microchips for Protein Purification and Concentration.

    Science.gov (United States)

    Gao, Changlu; Sun, Xiuhua; Wang, Huaixin; Qiao, Wei; Hu, Bo

    2016-01-01

    Affinity chromatography is a valuable method to purify and concentrate minute amount of proteins. Monoliths with epoxy groups for affinity immobilization were prepared by direct in-situ photopolymerization of glycidyl methacrylate and ethylene glycol dimethacrylate in porogenic solvents consisting of 1-dodecanol and cyclohexanol. By integrating affinity monoliths onto a microfluidic system, targeted biomolecules can be captured and retained on affinity column, while other biomolecules having no specific interactions toward the immobilized ligands flow through the microchannel. Therefore, proteins which remain on the affinity column are purified and concentrated, and then eluted by appropriate solutions and finally, separated by microchip capillary electrophoresis. This integrated microfluidic device has been applied to the purification and separation of specific proteins (FITC-labeled human serum albumin and IgG) in a mixture.

  7. Cantilever RF-MEMS for monolithic integration with phased array antennas on a PCB

    Science.gov (United States)

    Aguilar-Armenta, C. J.; Porter, S. J.

    2015-12-01

    This article presents the development and operation of a novel electrostatic metal-to-metal contact cantilever radio-frequency microelectromechanical system (RF-MEMS) switch for monolithic integration with microstrip phased array antennas (PAAs) on a printed circuit board. The switch is fabricated using simple photolithography techniques on a Rogers 4003c substrate, with a footprint of 200 µm × 100 µm, based on a 1 µm-thick copper cantilever. An alternative wet-etching technique for effectively releasing the cantilever is described. Electrostatic and electromagnetic measurements show that the RF-MEMS presents an actuation voltage of 90 V for metal-to-metal contact, an isolation of -8.7 dB, insertion loss of -2.5 dB and a return loss of -15 dB on a 50 Ω microstrip line at 12.5 GHz. For proof-of-concept, a beam-steering 2 × 2 microstrip PAA, based on two 1-bit phase shifters suitable for the monolithic integration of the RF-MEMS, has been designed and measured at 12.5 GHz. Measurements show that the beam-steering system presents effective radiation characteristics with scanning capabilities from broadside towards 29° in the H-plane.

  8. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  9. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

  10. Monolithic integrated optic fiber Bragg grating sensor interrogator

    Science.gov (United States)

    Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Songjian

    2010-04-01

    Fiber Bragg gratings (FBGs) are a mature sensing technology that has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. Fiber Bragg grating sensors can be use for a variety of measurements including strain, stress, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion distributed at multiple locations within the structure using a single fiber element. The most prominent advantages of FBGs are: small size and light weight, multiple FBG transducers on a single fiber, and immunity to radio frequency interference. A major disadvantage of FBG technology is that conventional state-of-the-art fiber Bragg grating interrogation systems are typically bulky, heavy, and costly bench top instruments that are assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the need for a compact FBG interrogation system, this paper describes recent progress towards the development of a miniature fiber Bragg grating sensor interrogator (FBG-TransceiverTM) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables the monolithic integration of all of the functionalities, both passive and active, of conventional bench top FBG sensor interrogators systems, packaged in a miniaturized, low power operation, 2-cm x 5-cm small form factor (SFF) package suitable for the long-term structural health monitoring in applications where size, weight, and power are critical for operation.

  11. Multiport InP monolithically integrated all-optical wavelength router.

    Science.gov (United States)

    Zheng, Xiu; Raz, Oded; Calabretta, Nicola; Zhao, Dan; Lu, Rongguo; Liu, Yong

    2016-08-15

    An indium phosphide-based monolithically integrated wavelength router is demonstrated in this Letter. The wavelength router has four input ports and four output ports, which integrate four wavelength converters and a 4×4 arrayed-waveguide grating router. Each wavelength converter is achieved based on cross-gain modulation and cross-phase modulation effects in a semiconductor optical amplifier. Error-free wavelength switching for a non-return-to-zero 231-1 ps eudorandom binary sequence at 40 Gb/s data rate is performed. Both 1×4 and 3×1 all-optical routing functions of this chip are demonstrated for the first time with power penalties as low as 3.2 dB.

  12. Monolithically integrated reconfigurable add-drop multiplexer for mode-division-multiplexing systems.

    Science.gov (United States)

    Wang, Shipeng; Wu, Hao; Tsang, Hon Ki; Dai, Daoxin

    2016-11-15

    An integrated reconfigurable optical add-drop multiplexer (ROADM) for mode-division-multiplexing systems is proposed and demonstrated for the first time, to the best of our knowledge. The present ROADM with four mode-channels is composed of a four-channel mode demultiplexer, four identical 2×2 thermo-optic Mach-Zehnder switches (MZSs), and a four-channel mode multiplexer, which are integrated monolithically on silicon. All the devices are designed for operation with TM polarization. The ROADM can add/drop any one of the mode channels freely by thermally turning on/off the corresponding MZS. For the added/dropped mode-channels, the excess loss is 1-5 dB, and the extinction ratio is 15-20 dB in the wavelength range of 1535-1565 nm.

  13. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  14. Monolithically integrated Helmholtz coils by 3-dimensional printing

    Energy Technology Data Exchange (ETDEWEB)

    Li, Longguang [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Abedini-Nassab, Roozbeh; Yellen, Benjamin B., E-mail: yellen@duke.edu [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Department of Mechanical Engineering and Materials Science, Duke University, P.O. Box 90300, Hudson Hall, Durham, North Carolina 27708 (United States)

    2014-06-23

    3D printing technology is of great interest for the monolithic fabrication of integrated systems; however, it is a challenge to introduce metallic components into 3D printed molds to enable broader device functionality. Here, we develop a technique for constructing a multi-axial Helmholtz coil by injecting a eutectic liquid metal Gallium Indium alloy (EGaIn) into helically shaped orthogonal cavities constructed in a 3D printed block. The tri-axial solenoids each carry up to 3.6 A of electrical current and produce magnetic field up to 70 G. Within the central section of the coil, the field variation is less than 1% and is in agreement with theory. The flow rates and critical pressures required to fill the 3D cavities with liquid metal also agree with theoretical predictions and provide scaling trends for filling the 3D printed parts. These monolithically integrated solenoids may find future applications in electronic cell culture platforms, atomic traps, and miniaturized chemical analysis systems based on nuclear magnetic resonance.

  15. Optically-triggered GaAs thyristor switches: Integrated structures for environmental hardening

    Energy Technology Data Exchange (ETDEWEB)

    Carson, R.F.; Weaver, H.T.; Hughes, R.C.; Zipperian, T.E.; Brennan, T.M.; Hammons, B.E.

    1990-01-01

    Optically-triggered thyristor switches often operate in adverse environments, such as high temperature and high dose-rate transient radiation, which can result in lowered operating voltage and premature triggering. These effects can be reduced by connecting or monolithically integrating a reverse-biased compensating photodiode or phototransistor into the gate of the optically-triggered thyristor. We have demonstrated the effectiveness of this hardening concept in silicon thyristors packaged with photodiodes, and in gallium arsenide optically-triggered thyristors monolithically integrated with compensating phototransistors.

  16. Wideband monolithically integrated front-end subsystems and components

    Science.gov (United States)

    Mruk, Joseph Rene

    This thesis presents the analysis, design, and measurements of passive, monolithically integrated, wideband recta-coax and printed circuit board front-end components. Monolithic fabrication of antennas, impedance transformers, filters, and transitions lowers manufacturing costs by reducing assembly time and enhances performance by removing connectors and cabling between the devices. Computational design, fabrication, and measurements are used to demonstrate the capabilities of these front-end assemblies. Two-arm wideband planar log-periodic antennas fed using a horizontal feed that allows for filters and impedance transformers to be readily fabricated within the radiating region of the antenna are demonstrated. At microwave frequencies, low-cost printed circuit board processes are typically used to produce planar devices. A 1.8 to 11 GHz two-arm planar log-periodic antenna is designed with a monolithically integrated impedance transformer. Band rejection methods based on modifying the antenna aperture, use of an integrated filter, and the application of both methods are investigated with realized gain suppressions of over 25 dB achieved. The ability of standard circuit board technology to fabricate millimeter-wave devices up to 110 GHz is severely limited. Thin dielectrics are required to prevent the excitation of higher order modes in the microstrip substrate. Fabricating the thin line widths required for the antenna aperture also becomes prohibitively challenging. Surface micro-machining typically used in the fabrication of MEMS devices is capable of producing the extremely small features that can be used to fabricate antennas extending through W-band. A directly RF fed 18 to 110 GHz planar log-periodic antenna is developed. The antenna is fabricated with an integrated impedance transformer and additional transitions for measurement characterization. Singly terminated low-loss wideband millimeter-wave filters operating over V- and W- band are developed. High

  17. Synthesis of monolithic graphene – graphite integrated electronics

    Science.gov (United States)

    Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M.

    2013-01-01

    Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems1 with functions defined by synthesis2-6. Graphene7-12 has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication13-20. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically-integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous catalyst metals permits the selective growth of graphene and graphite, with controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from synthesis. These functional, all-carbon structures were transferrable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing, and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent a substantial progress towards encoding electronic functionality via chemical synthesis and suggest future promise for one-step integration of graphene-graphite based electronics. PMID:22101813

  18. Synthesis of monolithic graphene-graphite integrated electronics.

    Science.gov (United States)

    Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M

    2011-11-20

    Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems with functions defined by synthesis. Graphene has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous metal catalysts permits the selective growth of graphene and graphite, with a controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from the synthesis. These functional, all-carbon structures were transferable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent substantial progress towards encoding electronic functionality through chemical synthesis and suggest the future promise of one-step integration of graphene-graphite based electronics.

  19. Analysis of monolithic integrated master oscillator power amplifiers

    Science.gov (United States)

    Mehuys, David; Welch, David F.; Waarts, Robert G.; Parke, Ross; Hardy, Amos; Streifer, William

    1991-07-01

    An analysis of a novel, monolithic integrated master oscillator power amplifier (M-MOPA) is presented. The M-MOPA consists of a DBR master oscillator which injects power into a linear chain of amplifiers and detuned second-order grating output couplers. The analysis self-consistently includes amplified spontaneous emission buildup and residual reflections throughout the amplifier stages. It predicts that output powers in excess of 1 W can be expected from a single-lateral-mode waveguide multistage amplifier less than 1 cm in length, injected with less than 15 mW of input power. In addition to the signal gain of more than 25 dB, the signal-to-noise ratio at 1-W output exceeds 15 dB. Because of the small reflections associated with the grating output couplers, and gain saturation by the injected signal, the amplifier self-oscillation threshold is suppressed to current densities above 15 kA/sq cm.

  20. Monolithic microwave integrated circuit devices for active array antennas

    Science.gov (United States)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  1. Towards monolithic integration of germanium light sources on silicon chips

    Science.gov (United States)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  2. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

    Science.gov (United States)

    Suckow, Will; Roberts, Tony; Switzer, Gregg; Terwilliger, Chelle

    2011-01-01

    Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

  3. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

    Directory of Open Access Journals (Sweden)

    Matija Podhraški

    2016-03-01

    Full Text Available An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

  4. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem.

    Science.gov (United States)

    Podhraški, Matija; Trontelj, Janez

    2016-03-17

    An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

  5. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

    Science.gov (United States)

    Podhraški, Matija; Trontelj, Janez

    2016-01-01

    An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm. PMID:26999146

  6. Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

    CERN Document Server

    Forget, S; Balembois, F; Georges, P; Landru, N; Feve, J P; Lin, J; Weng, Z; Forget, Sebastien; Druon, Frederic; Balembois, Francois; Georges, Patrick; Landru, Nicolas; Feve, Jean Philippe; Lin, Jiali; Weng, Zhiming

    2006-01-01

    the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

  7. Monolithically integrated AlN/GaN electronics for harsh environments Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a...

  8. Development of monolith Nd:YAG /Cr+4:YAG passively Q-switched microchip laser

    Science.gov (United States)

    Izhnin, Ihor; Vakiv, Mykola; Izhnin, Aleksandr; Syvorotka, Igor; Ubizskii, Sergii; Syvorotka, Ihor, Jr.

    2005-09-01

    The main features of passively Q-switched microchip lasers development are considered. The active medium of laser is an epitaxial structure combining an epitaxial layer of saturable absorber Cr4+:Y3Al5O12 (Cr:YAG) grown on substrate of generating crystal Nd:YAG by liquid phase epitaxy. The modulator layer has an initial optical absorption of 36 cm-1 at wavelength of lasing (1064 nm). The epitaxial layer grown on unworking side was mechanically removed and this substrate side was optically polished. The other one was processed precisely to needed thickness. The cavity's mirrors were deposited by electron beam technique directly on each side of the structure to form a rugged, monolithic resonator. Diode laser Model ATC-C4000 with lasing wavelength 808 nm provided the CW end pumping. The output pulses parameters were investigated by means of test bench consisting of photoelectric transducer FEK-15 and Digital Phosphor Oscilloscope TDS 5052B. The obtained laser parameter are as follows: pulse width (FWHM) about 1.3 ns, repetition rate 5.5 kHz, average output power about 10 mW, pulse energy 1.0 μJ, pick power 1.2 kW. The possible solutions for laser parameter improving and optimization are discussed.

  9. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Science.gov (United States)

    Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

    2017-02-01

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

  10. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Science.gov (United States)

    Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

    2017-01-01

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit. PMID:28195239

  11. Monolithic Microwave Integrated Circuit (MMIC) Phased Array Demonstrated With ACTS

    Science.gov (United States)

    1996-01-01

    Monolithic Microwave Integrated Circuit (MMIC) arrays developed by the NASA Lewis Research Center and the Air Force Rome Laboratory were demonstrated in aeronautical terminals and in mobile or fixed Earth terminals linked with NASA's Advanced Communications Technology Satellite (ACTS). Four K/Ka-band experimental arrays were demonstrated between May 1994 and May 1995. Each array had GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The 30-GHz transmit array used in uplinks to ACTS was developed by Lewis and Texas Instruments. The three 20-GHz receive arrays used in downlinks from ACTS were developed in cooperation with the Air Force Rome Laboratory, taking advantage of existing Air Force integrated-circuit, active-phased-array development contracts with the Boeing Company and Lockheed Martin Corporation. Four demonstrations, each related to an application of high interest to both commercial and Department of Defense organizations, were conducted. The location, type of link, and the data rate achieved for each of the applications is shown. In one demonstration-- an aeronautical terminal experiment called AERO-X--a duplex voice link between an aeronautical terminal on the Lewis Learjet and ACTS was achieved. Two others demonstrated duplex voice links (and in one case, interactive video links as well) between ACTS and an Army high-mobility, multipurpose wheeled vehicle (HMMWV, or "humvee"). In the fourth demonstration, the array was on a fixed mount and was electronically steered toward ACTS. Lewis served as project manager for all demonstrations and as overall system integrator. Lewis engineers developed the array system including a controller for open-loop tracking of ACTS during flight and HMMWV motion, as well as a laptop data display and recording system used in all demonstrations. The Jet Propulsion Laboratory supported the AERO-X program, providing elements of the ACTS Mobile Terminal. The successful

  12. A monolithic integrated micro direct methanol fuel cell based on sulfo functionalized porous silicon

    Science.gov (United States)

    Wang, M.; Lu, Y. X.; Liu, L. T.; Wang, X. H.

    2016-11-01

    In this paper, we demonstrate a monolithic integrated micro direct methanol fuel cell (μDMFC) for the first time. The monolithic integrated μDMFC combines proton exchange membrane (PEM) and Pt nanocatalysts, in which PEM is achieved by the functionalized porous silicon membrane and 3D Pt nanoflowers being synthesized in situ on it as catalysts. Sulfo groups functionalized porous silicon membrane serves as a PEM and a catalyst support simultaneously. The μDMFC prototype achieves an open circuit voltage of 0.3 V, a maximum power density of 5.5 mW/cm2. The monolithic integrated μDMFC offers several desirable features such as compatibility with micro fabrication techniques, an undeformable solid PEM and the convenience of assembly.

  13. High pressure-resistant SU-8 microchannels for monolithic porous structure integration

    Science.gov (United States)

    Carlier, Julien; Chuda, Katarzyna; Arscott, Steve; Thomy, Vincent; Verbeke, Bernard; Coqueret, Xavier; Camart, Jean Christophe; Druon, Christian; Tabourier, Pierre

    2006-10-01

    Integrated lab-on-chip (LOC) microsystems dedicated to proteomic analysis require specific pretreatment steps such as protein trypsic digestion, concentration, desalting or separation of biological samples. These steps can be achieved thanks to porous monolithic polymers. This paper deals with the integration of such a polymer into SU-8 microchannels by using a multi-material technology (SU-8, Pyrex and silicon). A solution for the fabrication of complete polymer microchannels which are high pressure- and solvents-resistant is proposed. This technique uses the negative photoresist SU-8 which is compatible with the protein analysis performed here. Our process requires a novel technological step using a silane coupling agent. This modification of the SU-8/Pyrex interface leads to the fabrication of a 100 µm × 160 µm section microchannel (length of 3 cm), closed with a Pyrex® lid by SU-8 bonding resistant to 80 bar. An improvement of the SU-8/monolithic structure is also demonstrated thanks to a specific treatment of the polymer enabling good anchoring of the monolith in the microchannels, and the pressure-resistance tests were also achieved with the monolithic structure integrated in the microchannels. A digestion step of a protein sample of benzoylarginine ethyl ester in a SU-8 microchannel was achieved after the functionalization of a monolith anchored in the microchannel. Analysis by UV/VIS spectroscopy of this in situ digestion has been reported.

  14. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  15. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  16. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed optical device is a fiber-based multi-channel switch to quickly switch a fiber-coupled laser among many possible output channels to create a fiber-based...

  17. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor

    NARCIS (Netherlands)

    Pagkali, Varvara; Petrou, Panagiota S.; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E.

    2016-01-01

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm2

  18. Monolithic integration of DUV-induced waveguides into plastic microfluidic chip for optical manipulation

    DEFF Research Database (Denmark)

    Khoury Arvelo, Maria; Vannahme, Christoph; Sørensen, Kristian Tølbøl

    2014-01-01

    A monolithic polymer optofluidic chip for manipulation of microbeads in flow is demonstrated. On this chip, polymer waveguides induced by Deep UV lithography are integrated with microfluidic channels. The optical propagation losses of the waveguides are measured to be 0.66±0.13 d...

  19. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor

    NARCIS (Netherlands)

    Pagkali, Varvara; Petrou, Panagiota S.; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E.

    2017-01-01

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm2

  20. Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

    DEFF Research Database (Denmark)

    Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

    2010-01-01

    The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon av...

  1. 5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator

    Science.gov (United States)

    Zhang, Y. X.; Zhao, L. J.; Niu, B.; Pan, J. Q.; Wang, W.

    2010-05-01

    A novel EAM/PD monolithically-integrated optical logic element is presented. 5Gb/s optical logic AND gate operations at about -2 V for non-return-to-zero (NRZ) signals with8.4dB extinction ratio and16mW absorbed optical power was demonstrated.

  2. Integrated on-chip mass spectrometry reaction monitoring in microfluidic devices containing porous polymer monolithic columns.

    Science.gov (United States)

    Dietze, C; Schulze, S; Ohla, S; Gilmore, K; Seeberger, P H; Belder, D

    2016-09-21

    Chip-based microfluidics enable the seamless integration of different functions into single devices. Here, we present microfluidic chips containing porous polymer monolithic columns as a means to facilitate chemical transformations as well as both downstream chromatographic separation and mass spectrometric analysis. Rapid liquid phase lithography prototyping creates the multifunctional device economically.

  3. Low-Loss 256-Channel AWG Module with Monolithically Integrated Spot-Size Converters

    Institute of Scientific and Technical Information of China (English)

    M. Itoh; S. Kamei; M. Ishii; Y. Hida; T. Shibata; Y. Hibino

    2003-01-01

    We developed a compact fiber-pigtailed 256-channel AWG module with 1.5% △ waveguides.By monolithically integrating spot-size converters with input/output waveguides, we achieved a lowinsertion loss of 2.6-4.1 dB with a low background crosstalk of -40 dB.

  4. Low-Loss 256-Channel AWG Module with Monolithically Integrated Spot-Size Converters

    Institute of Scientific and Technical Information of China (English)

    M.; Itoh; S.; Kamei; M.; Ishii; Y.; Hida; T.; Shibata; Y.; Hibino

    2003-01-01

    We developed a compact fiber-pigtailed 256-channel AWG module with 1.5% A waveguides. By monolithically integrating spot-size converters with input/output waveguides, we achieved a low insertion loss of 2.6-4.1 dB with a low background crosstalk of-40 dB.

  5. Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

    Science.gov (United States)

    Wang, Yang; Pan, Jiao-Qing; Zhao, Ling-Juan; Zhu, Hong-Liang; Wang, Wei

    2010-12-01

    Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

  6. Monolithic ionizing particle detector based on active matrix of functionally integrated structures

    Energy Technology Data Exchange (ETDEWEB)

    Murashev, V.N. [National University of Science and Technology “MISIS” (Russian Federation); Legotin, S.A., E-mail: serlego@mail.ru [National University of Science and Technology “MISIS” (Russian Federation); Karmanov, D.E. [Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics (MSU SINP) (Russian Federation); Baryshnikov, F.M.; Didenko, S.I. [National University of Science and Technology “MISIS” (Russian Federation)

    2014-02-15

    Highlights: • A new type of monolithic silicon position detector is presented. • An operating principle, design and technology of the detector are described. • Calculated estimations of the detecting efficiency are carried out. • Experimental results of alpha-particle and electron detection are shown. -- Abstract: An operating principle, design and technology of a new type of the monolithic silicon position detector (MSPD) for registration of ionizing particles and photons are described. The detector represents a specialized monolithic silicon VLSI that contains a two-dimensional detecting matrix of active functionally integrated bipolar structures and peripheral electronic circuitry for signal amplification and processing. This paper presents experimental results of α-particles and electrons detection with position accuracy and operation speed better than 12.5 μm and 1 ns, respectively. The given estimations show the capabilities of this detector and its advantages in comparison with analogs.

  7. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

    Science.gov (United States)

    Agazzi, Laura; Bradley, Jonathan D B; Dijkstra, Meindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus

    2010-12-20

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

  8. Research progresses of SOI optical waveguide devices and integrated optical switch matrix

    Institute of Scientific and Technical Information of China (English)

    YU Jinzhong; CHEN Shaowu; XIA Jinsong; WANG Zhangtao; FAN Zhongchao; LI Yanping; LIU Jingwei; YANG Di; CHEN Yuanyuan

    2005-01-01

    SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

  9. Monolithic photonic integration of suspended light emitting diode, waveguide and photodetector

    CERN Document Server

    Wang, Yongjin; Gao, Xumin; Cai, Wei; Xu, Yin; Yuan, Jialei; Zhu, Guixia; Yang, Yongchao; Cao, Xun; Zhu, Hongbo; Gruenberg, Peter

    2015-01-01

    We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the on-chip optical interconnects. This work paves the way towards novel active electro-optical sensing system and planar optical communication in the visible range.

  10. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This NASA SBIR Phase II effort will develop a 1 x 10 prototype non-mechanical fiber optic switch for use with high power lasers. The proposed optical device is a...

  11. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  12. Monolithic all-fiber repetition-rate tunable gain-switched single-frequency Yb-doped fiber laser.

    Science.gov (United States)

    Hou, Yubin; Zhang, Qian; Qi, Shuxian; Feng, Xian; Wang, Pu

    2016-12-12

    We report a monolithic gain-switched single-frequency Yb-doped fiber laser with widely tunable repetition rate. The single-frequency laser operation is realized by using an Yb-doped distributed Bragg reflection (DBR) fiber cavity, which is pumped by a commercial-available laser diode (LD) at 974 nm. The LD is electronically modulated by the driving current and the diode output contains both continuous wave (CW) and pulsed components. The CW component is set just below the threshold of the single-frequency fiber laser for reducing the requirement of the pump pulse energy. Above the threshold, the gain-switched oscillation is trigged by the pulsed component of the diode. Single-frequency pulsed laser output is achieved at 1.063 μm with a pulse duration of ~150 ns and a linewidth of 14 MHz. The repetition rate of the laser output can be tuned between 10 kHz and 400 kHz by tuning the electronic trigger signal. This kind of lasers shows potential for the applications in the area of coherent LIDAR etc.

  13. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Science.gov (United States)

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  14. Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

    Directory of Open Access Journals (Sweden)

    S.A. Legotin

    2014-07-01

    Full Text Available This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of α-particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered.

  15. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow.

    Science.gov (United States)

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-12-15

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system.

  16. Technology challenges for monolithically integrated waveguide demultiplexers Invited Paper

    Institute of Scientific and Technical Information of China (English)

    Lech Wosinski; Liu Liu; Ning Zhu; Lars Thylen

    2009-01-01

    A short overview of integrated waveguide demultiplexers for different applications in future highly inte- grated optical communication systems is presented. Some fabricated devices based on amorphous silicon nanowire technology are described.

  17. Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry

    Directory of Open Access Journals (Sweden)

    Gabriel Vidal-Álvarez

    2016-03-01

    Full Text Available We present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel. The suspended microbridge resonator is electrostatically actuated, capacitively sensed, and monolithically integrated with complementary metal-oxide-semiconductor (CMOS readout circuitry. The device is fabricated using the back end of line (BEOL layers of the AMS 0.35 μm commercial CMOS technology, interconnecting two metal layers with a contact layer. The fabricated device has a 6 fL capacity and has one of the smallest embedded channels so far. It is able to attain a mass sensitivity of 25 ag/Hz using a fully integrable electrical transduction.

  18. Monolithically Integrated Reconfigurable Filters for Microwave Photonic Links

    Science.gov (United States)

    Norberg, Erik J.

    For the purposes of commercial communication and military electronic warfare and radar alike, there is an increasing interest in RF systems that can handle very wide instantaneous bandwidths at high center frequencies. Optical signal processing has the capability to reduce latency, improve size, weight and power (SwAP) performance, and overcome the inherent bandwidth limitations of electronic counterparts. By rapidly pre-filtering wide bandwidth microwave signals in the optical domain, the analog-to-digital conversion (ADC) and subsequent digital signal processing (DSP) can be significantly relieved. Compared to channelizing and add/drop filters for wavelength division multiplexing (WDM) applications, the microwave filter application is much more challenging as it requires a more versatile filter, ideally with tunability in both frequency and bandwidth. In this work such a filter was developed using integrated photonics. By integrating the filter on a single InP chip, the stability required for coherent filtering is met, while the active integration platform offers a flexible filter design and higher tolerance in the coupler and fabrication specifications. Using an entirely deep etched fabrication with a single blanket regrowth, a simple fabrication with high yield is achieved. The reconfigurable filter is designed as an array of uncoupled filter stages with each filter stage reconfigurable as a filter pole or zero with arbitrary magnitude and phase. This gives rise to a flexible ffilter synthesis, much like an optical version of DSP filters. Flat-topped bandpass filters are demonstrated with frequency tunability over 30 GHz, bandwidth adjustable between 1.9 and 5.4 GHz, and stopband rejection >32 dB. In order to meet the stringent spurious-free dynamic range (SFDR) requirements of the microwave application, a novel epitaxial layer integration platform is developed. Optimized for high optical saturation power and low propagation loss, it produces semiconductor

  19. Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

    Science.gov (United States)

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

    2011-12-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

  20. Novel electroabsorption modulator monolithically integrated with spot-size converter

    Institute of Scientific and Technical Information of China (English)

    Lianping Hou; Wei Wang; Hongliang Zhu

    2005-01-01

    @@ A novel 1.55-μm spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100μm) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2° and 13.0°, respectively.

  1. Novel electroabsorption modulator monolithically integrated with spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang

    2005-01-01

    A novel 1.55-?m spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100 ?m) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2 deg. and 13.0 deg., respectively.

  2. Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

    Science.gov (United States)

    Sato, Kenji; Wakita, Koichi; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo; Takada, Atsushi

    1994-07-01

    Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.

  3. Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang, E-mail: oxgchen@illinois.edu [Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801 (United States)

    2015-07-20

    We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

  4. Monolithic CMOS-MEMS integration for high-g accelerometers

    Science.gov (United States)

    Narasimhan, Vinayak; Li, Holden; Tan, Chuan Seng

    2014-10-01

    This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC's SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.

  5. The role of monolithic integration in advanced laser products

    Science.gov (United States)

    Marsh, John H.

    2006-02-01

    The design and performance of single-mode high-power (>100 mW) semiconductor lasers suitable for integration into large arrays are reported. In 830 nm lasers, quantum well intermixing (QWI) has been used to increase the bandgap of the waveguide in the facet region by 120 meV, and the catastrophic optical damage threshold of uncoated devices increased by a factor of >3 as a result. The passive waveguides are relatively cool, bringing high reliability, improving the single-mode waveguide stability and enabling high-temperature operation. Furthermore, the passive waveguides relax the cleaving and packaging alignment tolerances, giving a high yield process suitable for manufacture. A far-field reduction layer is included in the lasers giving a fast axis divergence of <20° FWHM. Arrays in which each emitter operates at several 100 mW, have excellent uniformity of laser parameters such as kink power, operating power and optical beam profile.

  6. Femtosecond laser fabrication of monolithically integrated microfluidic sensors in glass.

    Science.gov (United States)

    He, Fei; Liao, Yang; Lin, Jintian; Song, Jiangxin; Qiao, Lingling; Cheng, Ya; Sugioka, Koji

    2014-10-17

    Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D) structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  7. Femtosecond Laser Fabrication of Monolithically Integrated Microfluidic Sensors in Glass

    Directory of Open Access Journals (Sweden)

    Fei He

    2014-10-01

    Full Text Available Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  8. Design and Fabrication of a Monolithic Optoelectronic Integrated Circuit Chip Based on CMOS Compatible Technology

    Institute of Scientific and Technical Information of China (English)

    GUO Wei-Feng; ZHAO Yong; WANG Wan-Jun; SHAO Hai-Feng; YANG Jian-Yi; JIANG Xiao-Qing

    2012-01-01

    A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology.The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function.Test results show that the extinction ratio of the MZM is close to 20dB and the small-signal gain of the CMOS driving circuit is about 26.9dB.A 50m V 10 MHz sine wave signal is amplified by the driving circuit,and then drives the MZM successfully.%A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9dB. A 50mV 10MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.

  9. Multi-channel monolithic integrated optic fiber Bragg grating sensor interrogator

    Science.gov (United States)

    Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Zongjian

    2011-09-01

    Fiber Bragg grating (FBG) is a mature sensing technology for the measurement of strain, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion. It has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. The most prominent advantages of FBG are: small size and light weight, distributed array of FBG transducers on a single fiber, and immunity to radio frequency interference. However, a major disadvantage of FBG technology is that conventional state-of-the-art FBG interrogation system is typically bulky, heavy, and costly bench top instruments that are typically assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the industrial need for a compact FBG interrogation system, this paper describes recent progress towards the development of miniature fiber Bragg grating sensor interrogator (FBG-Transceiver™) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables monolithic integration of all functionalities, both passive and active, of conventional bench top FBG sensor interrogator system, packaged in a miniaturized, low power operation, 2 cm×5 cm small form factor (SFF) package suitable for long-term structural health monitoring in applications where size, weight, and power are critical for operation.

  10. Monolithically integrated heterodyne optical phase-lock loop with RF XOR phase detector.

    Science.gov (United States)

    Steed, Robert J; Pozzi, Francesca; Fice, Martyn J; Renaud, Cyril C; Rogers, David C; Lealman, Ian F; Moodie, David G; Cannard, Paul J; Lynch, Colm; Johnston, Lilianne; Robertson, Michael J; Cronin, Richard; Pavlovic, Leon; Naglic, Luka; Vidmar, Matjaz; Seeds, Alwyn J

    2011-10-10

    We present results for an heterodyne optical phase-lock loop (OPLL), monolithically integrated on InP with external phase detector and loop filter, which phase locks the integrated laser to an external source, for offset frequencies tuneable between 0.6 GHz and 6.1 GHz. The integrated semiconductor laser emits at 1553 nm with 1.1 MHz linewidth, while the external laser has a linewidth less than 150 kHz. To achieve high quality phase locking with lasers of these linewidths, the loop delay has been made less than 1.8 ns. Monolithic integration reduces the optical path delay between the laser and photodiode to less than 20 ps. The electronic part of the OPLL was implemented using a custom-designed feedback circuit with a propagation delay of ~1 ns and an open-loop bandwidth greater than 1 GHz. The heterodyne signal between the locked slave laser and master laser has phase noise below -90 dBc/Hz for frequency offsets greater than 20 kHz and a phase error variance in 10 GHz bandwidth of 0.04 rad2.

  11. Design and application of multilayer monolithic microwave integrated circuit transformers

    Energy Technology Data Exchange (ETDEWEB)

    Economides, S.B

    1999-07-01

    fabricated on standard foundry processes. With careful modelling it is also feasible to integrate the two couplers into a single tri-filar transformer structure. This is a robust balun topology, which could be widely adopted. A push-pull MESFET amplifier with 8 dB gain demonstrated this at 12 GHz, using the balun chips connected to amplifier circuits. (author)

  12. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    Science.gov (United States)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-02-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  13. Two-dimensional hydrodynamic flow focusing in a microfluidic platform featuring a monolithic integrated glass micronozzle

    Science.gov (United States)

    Liu, Yifan; Shen, Yusheng; Duan, Lian; Yobas, Levent

    2016-10-01

    Two-dimensional hydrodynamic flow focusing is demonstrated through a microfluidic device featuring a monolithic integrated glass micronozzle inside a flow-focusing geometry. Such a coaxial configuration allows simple one-step focusing of a sample fluid stream, jetted from the micronozzle tip, in both in-plane and out-of-plane directions. The width of the focused filament can be precisely controlled and further scaled down to the submicrometer regime to facilitate rapid hydrodynamic mixing. Fluorescence quenching experiments reveal ultra-fast microsecond mixing of the denaturant into the focused filament. This device offers new possibilities to a set of applications such as the study of protein folding kinetics.

  14. A 1.55-μm laser array monolithically integrated with an MMI combiner

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Zhu Hongliang; Liang Song; Wang Baojun; Zhang Can; Zhao Lingjuan; Bian Jing

    2013-01-01

    The monolithic integration of four 1.55-μm range InGaAsP/InP distributed feedback lasers with a 4 × 1multimode-interference (MMI) optical combiner using the varied width ridge method is proposed and demonstrated.The average output power is 1.5 mW when the current of LD is 100 mA and the threshold current is 30-35 mA at 25 ℃.The lasing wavelength is 1.55-μm range and 40 dB sidemode suppression ratio is obtained.The four channels can operate separately or simultaneously.

  15. 2R-regeneration in a monolithically integrated four-section SOA-EA chip

    DEFF Research Database (Denmark)

    Vivero, Tania; Calabretta, Nicola; Tafur Monroy, Idelfonso

    2009-01-01

    are measured. Results show that by cascading two-pairs of SOA–EAs a steep static transfer function is achieved. Dynamical measurements show large improvements in extinction ratio as well as a large improvement in the receiver-sensitivity when used as a regenerator for NRZ signals at 10 Gb/s.......Optical regeneration using a monolithically integrated chip formed by a cascade of semiconductor optical amplifiers and saturable absorbers is investigated. Static transfer functions, signal reshaping, extinction ratio enhancement, noise dynamics and device dependence on operation conditions...

  16. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    Science.gov (United States)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-01-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  17. Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step

    OpenAIRE

    Hofstetter, Daniel; Zappe, H. P.; Epler, J. E.; van Riel, P

    2008-01-01

    The monolithic integration of a GaAs-AlGaAs distributed Bragg reflector (DBR) laser with a nonabsorbing grating section, a transparent waveguide, and an absorbing photodetector is reported. Transparent and absorbing segments were defined after growth by vacancy-enhanced quantum-well disordering (VED). Laser output power was 5 mW with a threshold current of 22 mA. Detector current was linearly dependent on the laser output power and the emission from the grating side of the laser could be dire...

  18. Monolithically Integrated, Mechanically Resilient Carbon-Based Probes for Scanning Probe Microscopy

    Science.gov (United States)

    Kaul, Anupama B.; Megerian, Krikor G.; Jennings, Andrew T.; Greer, Julia R.

    2010-01-01

    Scanning probe microscopy (SPM) is an important tool for performing measurements at the nanoscale in imaging bacteria or proteins in biology, as well as in the electronics industry. An essential element of SPM is a sharp, stable tip that possesses a small radius of curvature to enhance spatial resolution. Existing techniques for forming such tips are not ideal. High-aspect-ratio, monolithically integrated, as-grown carbon nanofibers (CNFs) have been formed that show promise for SPM applications by overcoming the limitations present in wet chemical and separate substrate etching processes.

  19. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core......, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 d...

  20. Highly efficient coupling between a monolithically integrated photonic crystal cavity and a bus waveguide

    Science.gov (United States)

    Debnath, Kapil; Welna, Karl; Ferrera, Marcello; Deasy, Kieran; Lidzey, David; Krauss, Thomas F.; O'Faolain, Liam

    2012-01-01

    We experimentally demonstrate a new optical filter design comprising of a photonic crystal cavity and a low index bus waveguide which are monolithically integrated on a silicon-on-insulator (SOI) platform. We have fabricated oxide clad PhC cavities with a silicon nitride waveguide positioned directly above, such that there is an overlap between the evanescent tails of the two modes. We have realised an extinction ratio of 7.5dB for cavities with total Q of 50,000.

  1. A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission

    Science.gov (United States)

    Zhang, Zhang; Ye, Tan; Jianmin, Zeng; Xu, Han; Xin, Cheng; Guangjun, Xie

    2016-09-01

    A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission is presented. Data and power are transmitted to the stimulator by mutual inductance coupling, while the in-vitro controller encodes the stimulation parameters. The stimulator integrates the digital control module and can generate the bipolar current with equal amplitude in four channels. In order to reduce power consumption, a novel controlled threshold voltage cancellation rectifier is proposed in this paper to provide the supply voltage of the stimulator. The monolithic stimulator was fabricated in a SMIC 0.18 μm 1-poly 6-metal mixed-signal CMOS process, occupying 0.23 mm2, and consumes 180 μW on average. Compared with previously published stimulators, this design has advantages of large stimulated current (0-0.8 mA) with the double low-voltage supply (1.8 and 3.3 V), and high-level integration. Project supported by the National Natural Science Foundation of China (Nos. 61404043, 61401137), the Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Nos. IIMDKFJJ-13-06, IIMDKFJJ-14-03), and the Fundamental Research Funds for the Central Universities (No. 2015HGZX0026).

  2. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  3. Slew rate induced distortion in switched-resistor integrators

    NARCIS (Netherlands)

    Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, E.A.M.; Nauta, B.; Surakampontorn, W.

    2006-01-01

    Opamp-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of opamp slew rate limitation

  4. Slew Rate Induced Distortion in Switched-Resistor Integrators

    NARCIS (Netherlands)

    Jiraseree-Amornkun, A.; Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, W.

    2006-01-01

    Abstract—OPAMP-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of OPAMP slew rate l

  5. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  6. Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots.

    Science.gov (United States)

    Zhang, Yang; Chen, Yan; Mietschke, Michael; Zhang, Long; Yuan, Feifei; Abel, Stefan; Hühne, Ruben; Nielsch, Kornelius; Fompeyrine, Jean; Ding, Fei; Schmidt, Oliver G

    2016-09-14

    Elastic strain fields based on single crystal piezoelectric elements represent an effective way for engineering the quantum dot (QD) emission with unrivaled precision and technological relevance. However, pioneering researches in this direction were mainly based on bulk piezoelectric substrates, which prevent the development of chip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitaxial PMN-PT thin films have been grown on SrTiO3 buffered Si and show excellent piezoelectric responses. Dense arrays of MEMS with small footprints are then fabricated based on these films, forming an on-chip strain tuning platform. After transferring the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.

  7. Investigation of Microwave Monolithic Integrated Circuit (MMIC) non-reciprocal millimeterwave components

    Science.gov (United States)

    Talisa, S. H.; Krishnaswamy, S. V.; Adam, J. D.; Yoo, K. C.; Doyle, N. J.

    1991-09-01

    Two ferrite film deposition techniques were investigated in this program for possible use in the monolithic integration of Gallium Arsenide electronic and magnetic millimeter-wave devices; (1) spin-spray plating (SSP) of nickel zinc ferrite films, and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP technique potential for this application was demonstrated. Film structural characteristics were studied, as well as their adhesions to other substrates and the conditions for growth of thicker films. Multilayers totalling 25 microns in thickness were grown on semiconducting substrates. The SSP process occurs at about 100 C and was experimentally demonstrated not to damage Gallium arsenide MMIC devices. The magnetic characteristics of these films were comparable to ceramic materials. A scheme for the monolithic integration of magnetic and Gallium arsenide electronic devices was proposed and its feasibility experimentally demonstrated. The films showed higher dielectric loss than was desirable, possibly owing to high water content. A better drying technique is required. Barium ferrite films with C-axis texture were reproducibly grown on sapphire. Magnetic measurements yielded acceptable saturation magnetization and anisotrophy field. Ferromagnetic resonance was not observed, possibly due to broad linewidths.

  8. An implantable neural probe with monolithically integrated dielectric waveguide and recording electrodes for optogenetics applications

    Science.gov (United States)

    Wu, Fan; Stark, Eran; Im, Maesoon; Cho, Il-Joo; Yoon, Eui-Sung; Buzsáki, György; Wise, Kensall D.; Yoon, Euisik

    2013-10-01

    Objective. Optogenetics promises exciting neuroscience research by offering optical stimulation of neurons with unprecedented temporal resolution, cell-type specificity and the ability to excite as well as to silence neurons. This work provides the technical solution to deliver light to local neurons and record neural potentials, facilitating local circuit analysis and bridging the gap between optogenetics and neurophysiology research. Approach. We have designed and obtained the first in vivo validation of a neural probe with monolithically integrated electrodes and waveguide. High spatial precision enables optical excitation of targeted neurons with minimal power and recording of single-units in dense cortical and subcortical regions. Main results. The total coupling and transmission loss through the dielectric waveguide at 473 nm was 10.5 ± 1.9 dB, corresponding to an average output intensity of 9400 mW mm-2 when coupled to a 7 mW optical fiber. Spontaneous field potentials and spiking activities of multiple Channelrhodopsin-2 expressing neurons were recorded in the hippocampus CA1 region of an anesthetized rat. Blue light stimulation at intensity of 51 mW mm-2 induced robust spiking activities in the physiologically identified local populations. Significance. This minimally invasive, complete monolithic integration provides unmatched spatial precision and scalability for future optogenetics studies at deep brain regions with high neuronal density.

  9. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  10. A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver

    Science.gov (United States)

    Cui, Hailin; Zhou, Shouli; Huang, Hui; Huang, Yongqing; Ren, Xiaomin

    2005-11-01

    Adding resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver is described. Between the InP buffer and device epitaxial structure, InP/InGaAsP quarter wavelength stack (QWS) are used to form DBR (Distributed Bragg Reflectors) mirror. The PIN-PD is integrated within a Fabry-Perot cavity and the incident light is reflected many times by the Fabry-Perot cavity and consequently absorbed many times by the absorption layer. Therefore, the quantum efficiency of this detector is enlarged, meanwhile other performances such as frequency response are not influenced. We discuss the method to fabricate the resonance cavity, make theory simulation, optimize design on it, and analyze the advantage of this device.

  11. Monolithic integration of a quantum emitter with a compact on-chip beam-splitter

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Coles, R. J.; O' Hara, J.; Royall, B.; Fox, A. M.; Skolnick, M. S. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Clarke, E. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-06-09

    A fundamental component of an integrated quantum optical circuit is an on-chip beam-splitter operating at the single-photon level. Here, we demonstrate the monolithic integration of an on-demand quantum emitter in the form of a single self-assembled InGaAs quantum dot (QD) with a compact (>10 μm), air clad, free standing directional coupler acting as a beam-splitter for anti-bunched light. The device was tested by using single photons emitted by a QD embedded in one of the input arms of the device. We verified the single-photon nature of the QD signal by performing Hanbury Brown-Twiss measurements and demonstrated single-photon beam splitting by cross-correlating the signal from the separate output ports of the directional coupler.

  12. Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Li, B. X.; Zhou, F.; Wang, B. J.; Wang, L. F.; Bian, J.; Zhao, L. J.; Wang, W.

    2006-04-01

    A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10-10 is confirmed.

  13. Boolean integration. [applied to switching network synthesis

    Science.gov (United States)

    Tucker, J. H.; Tapia, M. A.; Bennett, A. W.

    1976-01-01

    This paper presents the necessary and sufficient conditions for a given differential expression to be compatibly integrable and it presents the necessary and sufficient conditions for a given expression to be exactly integrable. Methods are given for integrating a differential expression when it is exactly integrable and when it is compatibly integrable. The physical interpretation is given of the integral of order k, of a differential expression, and it is shown that any differential expression of the proper form is integrable by parts.

  14. Optical 40 GHz pulse source module based on a monolithically integrated mode locked DBR laser

    Science.gov (United States)

    Huettl, B.; Kaiser, R.; Kroh, M.; Schubert, C.; Jacumeit, G.; Heidrich, H.

    2005-11-01

    In this paper the performance characteristics of compact optical 40 GHz pulse laser modules consisting of a monolithic mode-locked MQW DBR laser on GaInAsP/InP are reported. The monolithic devices were fabricated as tunable multi-section buried heterostructure lasers. A DBR grating is integrated at the output port of an extended cavity in order to meet the standardized ITU wavelength channels allocated in the spectral window around 1.55 μm in optical high speed communication networks. The fabricated 40 GHz lasers modules not only emit short optical pulses (< 1.5 ps) with very low amplitude noise (<1.5 %) and phase noise levels (timing jitter: 50 fs) but also enable good pulse-to-pulse phase and long-term stability. A wavelength tuning range of 6 nm is possible and large locking bandwidths between 100 ... 260 MHz are observed. All data have been achieved by operating the lasers in a hybrid mode-locking scheme with a required minimum micro-wave power of only 12 dBm for pulse synchronization. Details on laser chip architecture and module performance are summarized and the results of a stable and error free module performance in first 160 Gb/s (4 x 40 Gb/s OTDM) RZ-DPSK transmission experiments are presented.

  15. A monolithically integrated detector-preamplifier on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/{radical}Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

  16. Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

    DEFF Research Database (Denmark)

    Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

    2010-01-01

    scheme through a board-to-board receptacle was developed and combined with a portable customized readout and control instrument. Real-time detection of deleterious mutations in BRCA1 gene related to predisposition to hereditary breast/ovarian cancer was performed with the instrument developed using PCR......The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon...... products. Detection was based on waveguided photons elimination through interaction with fluorescently labeled PCR products. Detection of single biomolecular binding events was also demonstrated using nanoparticles as labels. In addition, label-free monitoring of bioreactions in real time was achieved...

  17. Monolithically mode division multiplexing photonic integrated circuit for large-capacity optical interconnection.

    Science.gov (United States)

    Chen, Guanyu; Yu, Yu; Zhang, Xinliang

    2016-08-01

    We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.

  18. Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Feng, Wen; Liang, Song; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-06-01

    A 1.60-µm laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3×10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

  19. Diffraction coupled phase-locked arrays of quantum cascade lasers with monolithically integrated Talbot cavities

    CERN Document Server

    Wang, Lei; Jia, Zhi-Wei; Zhao, Yue; Liu, Chuan-Wei; Liu, Ying-Hui; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Feng-Qi; Xu, Xian-Gang

    2016-01-01

    Diffraction coupled arrays of quantum cascade laser are presented. The phase-locked behavior is achieved through monolithic integration of a Talbot cavity at one side of the laser array. The principle is based on fractional Talbot effect. By controlling length of Talbot cavity to be a quarter of Talbot distance (Zt/4), in-phase mode operation is selected. Measured far-field radiation patterns reflect stable in-phase mode operation under different injection currents, from threshold current to full power current. Diffraction-limited performance is shown from the lateral far-field, where three peaks can be obtained and main peak and side peak interval is 10.5{\\deg}. The phase-locked arrays with in-phase mode operation may be a feasible solution to get higher output power and maintain well beam quality meanwhile.

  20. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    Science.gov (United States)

    Bickford, Justin Robert

    Waferbonding is a technique that integrates different semiconductors together, in order to obtain hybrid structures that exploit the strengths of each material. Work was done at the University of California at San Diego to investigate the waferbonding of III/V compound semiconductors to silicon using a metal interface. GaAs and other III/V compound semiconductors surpass silicon in their ability to create high performance microwave devices, while silicon offers an inexpensive platform with a proven digital architecture that can interface with microwave devices and support passive components and driver circuitry. Intimate integration of the two will be required, as mixed RF/digital and optical/digital systems for communications devices such as cell phones, wi-fi, and optical communications systems are pushed smaller, faster, and to higher power. The metalbonding implementation of a proposed heterogeneous monolithic microwave integrated circuit (HMMIC) system was investigated, and was shown to extend the capabilities of existing homogeneous monolithic microwave integrated circuit (MMIC) systems. The main goals of this work were two-fold; first to implement a robust heterogeneous integration technique, and second, to show that this approach uniquely improves upon existing microwave integration technology. The metalbonding technique investigated sparsely integrated GaAs structures onto silicon, in pursuit of this HMMIC scheme. Both bottom-up and top-down fabrication methods were implemented. These approaches required the development of a myriad of meticulously designed fabrication procedures capable of avoiding the many incompatibilities between the compound semiconductor, bondmetal, and silicon materials. The bondmetal interface, provided by these techniques, broadens the scope of existing monolithic microwave integrated circuit technology design possibilities. Essential bond interface properties were measured to establish the performance of this heterogeneous

  1. Isolation of Integrated Optical Acousto-Optic Switch

    Institute of Scientific and Technical Information of China (English)

    XIAO Li-Feng; LIU Ying; WANG Wei-Peng; GENG Fan

    2006-01-01

    @@ Isolation of a new structured acousto-optic switch based on an integrated optical polarization-independent quasicollinear acousto-optic tunable filter is studied in detail. The factors that influence the isolation of the optical switch are analysed, the expressions of the isolation are educed, and the isolation of the device is measured in experiment. It is found that the isolation mainly depends on the TE/TM mode intensity ratio, the mode-splitter extinction rate, and the conversion efficiency.

  2. Analysis of drugs in plasma samples from schizophrenic patients by column-switching liquid chromatography-tandem mass spectrometry with organic-inorganic hybrid cyanopropyl monolithic column.

    Science.gov (United States)

    Domingues, Diego Soares; Souza, Israel Donizeti de; Queiroz, Maria Eugênia Costa

    2015-07-01

    This study reports on the development of a rapid, selective, and sensitive column-switching liquid chromatography-tandem mass spectrometry (LC-MS/MS) method to analyze sixteen drugs (antidepressants, anticonvulsants, anxiolytics, and antipsychotics) in plasma samples from schizophrenic patients. The developed organic-inorganic hybrid monolithic column with cyanopropyl groups was used for the first dimension of the column-switching arrangement. This arrangement enabled online pre-concentration of the drugs (monolithic column) and their subsequent analytical separation on an XSelect SCH C18 column. The drugs were detected on a triple quadrupole tandem mass spectrometer (multiple reactions monitoring mode) with an electrospray ionization source in the positive ion mode. The developed method afforded adequate linearity for the sixteen target drugs; the coefficients of determination (R(2)) lay above 0.9932, the interassay precision had coefficients of variation lower than 6.5%, and the relative standard error values of the accuracy ranged from -14.0 to 11.8%. The lower limits of quantification in plasma samples ranged from 63 to 1250pgmL(-1). The developed method successfully analyzed the target drugs in plasma samples from schizophrenic patients for therapeutic drug monitoring (TDM).

  3. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

    Science.gov (United States)

    Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2014-08-11

    We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

  4. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  5. EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

    Science.gov (United States)

    Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei

    2017-06-01

    We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.

  6. Flexible circuits with integrated switches for robotic shape sensing

    Science.gov (United States)

    Harnett, C. K.

    2016-05-01

    Digital switches are commonly used for detecting surface contact and limb-position limits in robotics. The typical momentary-contact digital switch is a mechanical device made from metal springs, designed to connect with a rigid printed circuit board (PCB). However, flexible printed circuits are taking over from the rigid PCB in robotics because the circuits can bend while carrying signals and power through moving joints. This project is motivated by a previous work where an array of surface-mount momentary contact switches on a flexible circuit acted as an all-digital shape sensor compatible with the power resources of energy harvesting systems. Without a rigid segment, the smallest commercially-available surface-mount switches would detach from the flexible circuit after several bending cycles, sometimes violently. This report describes a low-cost, conductive fiber based method to integrate electromechanical switches into flexible circuits and other soft, bendable materials. Because the switches are digital (on/off), they differ from commercially-available continuous-valued bend/flex sensors. No amplification or analog-to-digital conversion is needed to read the signal, but the tradeoff is that the digital switches only give a threshold curvature value. Boundary conditions on the edges of the flexible circuit are key to setting the threshold curvature value for switching. This presentation will discuss threshold-setting, size scaling of the design, automation for inserting a digital switch into the flexible circuit fabrication process, and methods for reconstructing a shape from an array of digital switch states.

  7. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon.

    Science.gov (United States)

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-04-04

    Microchannel plates are vacuum-based electron multipliers for particle--in particular, photon--detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80-120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200 °C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

  8. All-optical devices for ultrafast packet switching

    DEFF Research Database (Denmark)

    Dorren, H.J.S.; HerreraDorren, J.; Raz, O.;

    2007-01-01

    We discuss integrated devices for all-optical packet switching. We focus on monolithically integrated all-optical flip-flops, ultra-fast semiconductor based wavelength converters and explain the operation principles. Finally, a 160 Gb/s all-optical packet switching experiment over 110 km of field...

  9. Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform

    Science.gov (United States)

    Liu, Jifeng; Pan, Dong; Jongthammanurak, Samerkhae; Wada, Kazumi; Kimerling, Lionel C.; Michel, Jurgen

    2007-01-01

    We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electroabsorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO2(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.

  10. Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

    Science.gov (United States)

    Raring, James W.

    -saturation power receiver structures represent the state-of-the-art technologies for even discrete components. Using the novel integration technology, we present the first widely-tunable single-chip device capable of transmit and receive functionality at 40 Gb/s. This device monolithically integrates tunable lasers, EAMs, SOAs, and photodetectors with performance that rivals optimized discrete components. The high-flexibility integration scheme requires only simple blanket regrowth steps and thus breaks the performance versus yield trade-off plaguing conventional fabrication techniques employed for high-functionality PICs.

  11. Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission.

    Science.gov (United States)

    Larrue, Alexandre; Wilhelm, Christophe; Vest, Gwenaelle; Combrié, Sylvain; de Rossi, Alfredo; Soci, Cesare

    2012-03-26

    A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

  12. Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

    Science.gov (United States)

    Morales, J. S. D.; Gandan, S.; Ren, D.; Ochalski, Tomasz J.; Huffaker, Diana L.

    2017-02-01

    In this work, we study the optical properties and emission dynamics of the novel nanostructure p-GaAs nanopillars (NPs) on Si. The integration of III-V optoelectronics on Si substrates is essential for next-generation high-speed communications. NPs on Si are good candidates as gain media in monolithically integrated small-scale lasers on silicon. In order to develop this technology, an in-depth knowledge of the NP structure is necessary to resolve its optimal optical properties. The optical characterization which has been carried out consists of the emission analysis for different NP geometries. We measured NPs with different combinations of pitch (of the order of a few μm) and diameter (of the order of tens of nm). A comparison of intensities for the various NPs provides us with the most efficient geometry. The quality of the crystal grown has been studied from temperature-dependent photoluminescence (PL). A red shift and a significant reduction of the intensity of the NP emission are observed with an increase in temperature. The results also show the presence of two non-radiative recombination channels when the intensity peaks at different temperatures are analyzed with the activation energy function.

  13. Vertically Integrated Thermo-Optic Waveguide Switch Using Optical Polymers

    Institute of Scientific and Technical Information of China (English)

    Ki-Hong; Kim; Sang-Yung; Shin; Doo-Sun; Choi

    2003-01-01

    We propose and fabricate a vertically integrated thermo-optic waveguide switch. It controls the optical path between two vertically stacked waveguides using the thermo-optic effect of optical polymer. The measured crosstalk is less than -10 dB.

  14. Vertically Integrated Thermo-Optic Waveguide Switch Using Optical Polymers

    Institute of Scientific and Technical Information of China (English)

    Ki-Hong Kim; Sang-Yung Shin; Doo-Sun Choi

    2003-01-01

    We propose and fabricate a vertically integrated thermo-optic waveguide switch. It controls the optical path between two vertically stacked waveguides using the thermo-optic effect of optical polymer. The measured crosstalk is less than-10 dB.

  15. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  16. MEMS Torsion-Mirror Actuators for Optical Switching or Attenuating Applications

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Novel MEMS torsion-mirror actuators with monolithically integrated fiber self-holding structures are fabricated, and investigated experimentally and theoretically. Their electromechanical and optical characteristics are acceptable for optical switching or attenuating applications.

  17. A monolithically integrated dual-mode laser for photonic microwave generation and all-optical clock recovery

    Science.gov (United States)

    Yu, Liqiang; Zhou, Daibing; Zhao, Lingjuan

    2014-09-01

    We demonstrate a monolithically integrated dual-mode laser (DML) with narrow-beat-linewidth and wide-beat-tunability. Using a monolithic DFB laser subjected to amplified feedback, photonic microwave generation of up to 45 GHz is obtained with higher than 15 GHz beat frequency tunability. Thanks to the high phase correlation of the two modes and the narrow mode linewidth, a RF linewidth of lower than 50 kHz is measured. Simulations are also carried out to illustrate the dual-mode beat characteristic. Furthermore, using the DML, an all-optical clock recovery for 40  Gbaud NRZ-QPSK signals is demonstrated. Timing jitter of lower than 363 fs (integrated within a frequency range from 100 Hz to 1 GHz) is obtained.

  18. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.

    2008-12-01

    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  19. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.

    1991-01-01

    InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

  20. Integration of monolithic porous polymer with droplet-based microfluidics on a chip for nano/picoliter volume sample analysis

    OpenAIRE

    Kim, Jin-Young; Chang, Soo-Ik; Andrew J deMello; O’Hare, Danny

    2014-01-01

    In this paper, a porous polymer nanostructure has been integrated with droplet-based microfluidics in a single planar format. Monolithic porous polymer (MPP) was formed selectively within a microfluidic channel. The resulting analyte bands were sequentially comartmentalised into droplets. This device reduces band broadening and the effects of post-column dead volume by the combination of the two techniques. Moreover it offers the precise control of nano/picoliter volume samples.

  1. Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure

    Science.gov (United States)

    Oh, Su Hwan; Lee, Ji-Myon; Kim, Soo; Ko, Hyunsung; Lee, Chul-Wook; Park, Sahnggi; Park, Moon-Ho

    2004-10-01

    We have demonstrated a high-power widely tunable sampled grating (SG) DBR laser integrated monolithically with optical semiconductor amplifier (SOA), using planar buried heterostructure (PBH). The measured threshold current was 5 mA on average with 60 chips randomly selected which is lowest among the typical average values. Fiber-coupled output power was 12.4 dBm and the output power variation was ˜1 dB for the whole tuning range.

  2. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  3. Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN-PT Ferroelectric Single Crystal.

    Science.gov (United States)

    Fang, Huajing; Xu, Chao; Ding, Jie; Li, Qiang; Sun, Jia-Lin; Dai, Ji-Yan; Ren, Tian-Ling; Yan, Qingfeng

    2016-12-07

    Photodetectors capable of detecting two or more bands simultaneously with a single system have attracted extensive attentions because of their critical applications in image sensing, communication, and so on. Here, we demonstrate a self-powered ultrabroadband photodetector monolithically integrated on a 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-28PT) single crystal. By combining the optothermal and pyroelectric effect, the multifunctional PMN-28PT single crystal can response to a wide wavelength range from UV to terahertz (THz). At room temperature, the photodetector could generate a pyroelectric current under the intermittent illumination of incident light in absence of external bias. A systematic study of the photoresponse was investigated. The pyroelectric current shows an almost linear relationship to illumination intensity. Benefiting from the excellent pyroelectric property of PMN-28PT single crystal and the optimized device architecture, the device exhibited a dramatic improvement in operation frequency up to 3 kHz without any obvious degradation in sensitivity. Such a self-powered photodetector with ultrabroadband response may open a window for the novel application of ferroelectric materials in optoelectronics.

  4. Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

    Science.gov (United States)

    Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

    2015-01-01

    A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

  5. Garnet-free optical circulators monolithically integrated on spatially modified III-V quantum wells

    CERN Document Server

    Aleahmad, Parinaz; Christodoulides, Demetrios; LiKamWa, Patrick

    2016-01-01

    Optical circulators are indispensable components in photonic networks that are aimed to route information in a unidirectional way among their N-ports1,2. In general, these devices rely on magneto-optical garnets3 with appreciable Verdet constants that are utilized in conjunction with other elements like permanent magnets, wave-plates, birefringent crystals and/or beam splitters. Consequently, these arrangements are typically bulky and hence not conducive to on-chip photonic integration4-6. Of interest would be to devise strategies through which miniaturized optical circulators can be monolithically fabricated on light-emitting semiconductor platforms by solely relying on physical properties that are indigenous to the material itself. By exploiting the interplay between non-Hermiticity and nonlinearity, here we demonstrate a new class of chip-scale circulators on spatially modified III-V quantum well systems. These garnet-free unidirectional structures are broadband (over 2.5 THz) at 1550 nm, effectively loss-...

  6. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Zhou, Fan; Wang, Baojun; Bian, Jing; Wang, Wei

    2006-02-01

    We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0°×12.6°, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber.

  7. ATR LEU Monolithic Foil-Type Fuel with Integral Cladding Burnable Absorber – Neutronics Performance Evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Gray Chang

    2012-03-01

    The Advanced Test Reactor (ATR), currently operating in the United States, is used for material testing at very high neutron fluxes. Powered with highly enriched uranium (HEU), the ATR has a maximum thermal power rating of 250 MWth. Because of the large test volumes located in high flux areas, the ATR is an ideal candidate for assessing the feasibility of converting HEU driven reactor cores to low-enriched uranium (LEU) cores. The burnable absorber - 10B, was added in the inner and outer plates to reduce the initial excess reactivity, and to improve the peak ratio of the inner/outer heat flux. The present work investigates the LEU Monolithic foil-type fuel with 10B Integral Cladding Burnable Absorber (ICBA) design and evaluates the subsequent neutronics operating effects of this proposed fuel designs. The proposed LEU fuel specification in this work is directly related to both the RERTR LEU Development Program and the Advanced Test Reactor (ATR) LEU Conversion Project at Idaho National Laboratory (INL).

  8. Monolithically integrated two-axis microgripper for polarization maintaining in optical fiber assembly.

    Science.gov (United States)

    Zhang, Jianbin; Lu, Kangkang; Chen, Weihai; Jiang, Jun; Chen, Wenjie

    2015-02-01

    Polarization maintaining optical fiber (PMOF) is a kind of special optical fiber that is designed to transmit the linearly polarized light. Unlike the general optical fiber, it is critical to conduct the rotational alignment between two PMOFs to guarantee the efficiency of light transmission. Until now, this alignment task still cannot be addressed with an efficient and economical way. Hence, we propose a monolithically integrated two-axis flexure-based microgripper that has the grasping and rubbing functions. To achieve a compact structure, the microgripper is designed with an asymmetric architecture. In this paper, the pseudo-rigid body model approach and finite element analysis are conducted to provide the essential guideline to accomplish the theoretical design. The prototype is fabricated by wire electrical discharge machining, with which two experiments are conducted to validate the performance of the microgripper. The experimental results demonstrate that the proposed microgripper can firmly grasp the optical fiber with the diameter of 250 μm and meanwhile can rub it more than 90° accurately and effectively, which indicate that it can satisfy the operating requirements well in the PMOF assembly.

  9. Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser

    Science.gov (United States)

    Oennegren, Jan; Svedin, Jan; Sahlen, Olof; Jansson, Mats; Alping, Arne G.

    1995-10-01

    Electroabsorption modulators (EA) are attractive components for very high speed digital links (up to 40 Gbit/s). The objective of the present work has been to evaluate the analog performance and use of a Franz Keldysh modulator (FK) monolithically integrated with a DFB laser (DFB/FK-modulator) operating at 1550 nm. This DFB/FK-modulator is a combination of a directly modulated laser diode and an external modulator in one chip. The analog performance is therefore depending on both the modulator bias voltage and DFB-laser bias current. The normal optical output characteristic from an EA-modulator has a strongly nonlinear behavior. The modulator described in this paper shows for low bias voltage and/or high laser current a linear bahavior. This linear behavior is mainly due to the hole pile-up effect at the p/i-interface of the modulator. In digital transmission system this hole pile-up effect is a disadvantage, but in an analog transmission system it can be used to achieve better analog performance. Measurements (and simulations) on the DFB/FK-modulator show that its analog performance competes well with direct modulated FP and DFB lasers, especially if the modulator is biased for optimum analog performance.

  10. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser

    Science.gov (United States)

    Cheng, YuanBing; Pan, JiaoQing; Zhou, Fan; Wang, BaoJun; Zhu, Hongliang; Zhao, Lingjuan; Wang, Wei

    2007-11-01

    High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250 μm DFB and 170 μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

  11. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Vinayak, Seema [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India)]. E-mail: seema_vinayak@rediffmail.com; Vyas, H.P. [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India); Muraleedharan, K. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad-500058 (India); Vankar, V.D. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi- 110016 (India)

    2006-08-30

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R {sub S}) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R {sub S} and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition.

  12. Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

    Energy Technology Data Exchange (ETDEWEB)

    Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried [Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7, Vienna 1040 (Austria)

    2015-01-26

    A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} at 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

  13. First system experiments with a monolithically integrated tunable polarization diversity heterodyne receiver OEIC on InP

    Science.gov (United States)

    Hilbk, U.; Hermes, T.; Meissner, P.; Westphal, F. J.; Jacumeit, G.; Stenzel, R.; Unterboersch, G.

    1995-01-01

    System performance of an integrated polarization diversity heterodyne receiver optoelectronic IC (OEIC) is reported. The OEIC is monolithically integrated on InP. It includes a tunable 4 section DBR laser (quasi continuous tuning range 3.5 nm) and balanced photodiodes. The packaged OEIC is supplied with a fiber pigtail. Stable and polarization independent operation is achieved without any tendency for a bit error floor. The sensitivity at 1550.2 nm is -33.5 dBm at a bitrate of 140 Mbit/s. The performance of the OEIC based receiver is verified by operating in an experimental OFDM-TV distribution system with 4 channels.

  14. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  15. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    CERN Document Server

    Ding, Yunhong; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J; Galili, Michael; Morioka, Toshio; Oxenlowe, Leif Katsuo

    2016-01-01

    Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing swi...

  16. Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

    Science.gov (United States)

    Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

    2012-12-17

    A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

  17. Back End of Line Nanorelays for Ultra-low Power Monolithic Integrated NEMS-CMOS Circuits

    KAUST Repository

    Lechuga Aranda, Jesus Javier

    2016-05-01

    Since the introduction of Complementary-Metal-Oxide-Semiconductor (CMOS) technology, the chip industry has enjoyed many benefits of transistor feature size scaling, including higher speed and device density and improved energy efficiency. However, in the recent years, the IC designers have encountered a few roadblocks, namely reaching the physical limits of scaling and also increased device leakage which has resulted in a slow-down of supply voltage and power density scaling. Therefore, there has been an extensive hunt for alternative circuit architectures and switching devices that can alleviate or eliminate the current crisis in the semiconductor industry. The Nano-Electro-Mechanical (NEM) relay is a promising alternative switch that offers zero leakage and abrupt turn-on behaviour. Even though these devices are intrinsically slower than CMOS transistors, new circuit design techniques tailored for the electromechanical properties of such devices can be leveraged to design medium performance, ultra-low power integrated circuits. In this thesis, we deal with a new generation of such devices that is built in the back end of line (BEOL) CMOS process and is an ideal option for full integration with current CMOS transistor technology. Simulation and verification at the circuit and system level is a critical step in the design flow of microelectronic circuits, and this is especially important for new technologies that lack the standard design infrastructure and well-known verification platforms. Although most of the physical and electrical properties of NEM structures can be simulated using standard electronic automation software, there is no report of a reliable behavioural model for NEMS switches that enable large circuit simulations. In this work, we present an optimised model of a BEOL nano relay that encompasses all the electromechanical characteristics of the device and is robust and lightweight enough for VLSI applications that require simulation of thousands of

  18. Design of monoliths through their mechanical properties.

    Science.gov (United States)

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  19. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld;

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  20. Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems

    Science.gov (United States)

    1989-05-01

    methods," SIAM J. as a Consultant to DOD on the VHSIC and various monolithic programs Numer. Anal., vol. 20, no. 3, pp. 510-536, 1983. and industrial ...algorithm," Acta Electronica Sinica. vol. 14, no. 4, pp. 91-96, 1986. Neglecting the higher order terms, we can express ,(x) 161 J. E. Dennis. Jr

  1. Monolithic liquid-chromatography columns for protein analysisprotein digest separation and integrated systems

    NARCIS (Netherlands)

    van de Meent, M.H.M.

    2010-01-01

    The objectives of the research described in this thesis are to evaluate the applicability of both silica-based and polymeric monolithic columns for protein analysis. The first part describes investigations into the effects of column length and stationary-phase chemistry on the separation of protein

  2. Interferometric wavelength converter operating at 10 Gb/s based on a monolithic-integrated photonic circuit

    Science.gov (United States)

    Rigo, C.; Coriasso, C.; Campi, D.; Stano, A.; Cacciatore, C.; Re, D.; Fornuto, G.; Soldani, D.; De Franceschi, R.; Ghiglieno, F.; Vallone, M.; Valenti, P.; Zucchelli, L.; Lupo, S.; Gambini, P.

    2000-02-01

    In this work we present a wavelength converter based on a Michelson interferometer. It is obtained by monolithic integration of two-semiconductor optical amplifiers with a passive waveguided X-coupler, incorporating turning mirrors. It operates in the 1.55 μm spectral window and allows the wavelength conversion of data streams up to 10 Gb/s, showing open-eye diagrams and extinction-ratio regeneration capabilities. Comparison of two structures with different active layers and their influence on the polarization sensitivity is also presented.

  3. Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3-micrometer wavelength

    Science.gov (United States)

    Gerlach, Philipp; Peschke, Martin; Wenger, Thomas; Saravanan, Brem K.; Hanke, Christian; Lorch, Steffen; Michalzik, Rainer

    2006-04-01

    We report on the design and experimental results of monolithically integrated optoelectronic devices containing distributed feedback (DFB) laser, electroabsorption modulator (EAM), and semiconductor optical amplifier (SOA). Common InGaAlAs multiple quantum well (MQW) layers are used in all device sections. The incorporation of local lateral metal gratings in the DFB section enables device fabrication by single-step epitaxial growth. The emission wavelength is λ=1.3 micrometer. More than 2 mW single-mode fiber-coupled output power as well as 10 dB/2 V static extinction ratio have been achieved. Modulation experiments clearly show 10 Gbit/s capability.

  4. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  5. Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Ribot, H.; Sansonetti, P.; Brandon, J.; Carre, M.; Menigaux, L.; Azoulay, R.; Bouadma, N.

    1989-02-06

    Monolithic integration of a quarter-circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45-..mu..m-long straight part and a quarter circle with a curvature radius of 150 ..mu..m. The component exhibits a threshold current of 50 mA in a pulsed regime. A 10 mW emission is measured from a 415-..mu..m-long tangential straight waveguide for an injection current of 140 mA.

  6. InP-based monolithically integrated 1310/1550nm diplexer/triplexer

    Science.gov (United States)

    Silfvenius, C.; Swillo, M.; Claesson, J.; Forsberg, E.; Akram, N.; Chacinski, M.; Thylén, L.

    2008-11-01

    Multiple streams of high definition television (HDTV) and improved home-working infrastructure are currently driving forces for potential fiber to the home (FTTH) customers [1]. There is an interest to reduce the cost and physical size of the FTTH equipment. The current fabrication methods have reached a cost minimum. We have addressed the costchallenge by developing 1310/(1490)/1550nm bidirectional diplexers, by monolithic seamless integration of lasers, photodiodes and wavelength division multiplexing (WDM) couplers into one single InP-based device. A 250nm wide optical gain profile covers the spectrum from 1310 to 1550nm and is the principal building block. The device fabrication is basically based on the established configuration of using split-contacts on continuos waveguides. Optical and electrical cross-talks are further addressed by using a Y-configuration to physically separate the components from each other and avoid inline configurations such as when the incoming signal travels through the laser component or vice versa. By the eliminated butt-joint interfaces which can reflect light between components or be a current leakage path and by leaving optically absorbing (unpumped active) material to surround the components to absorb spontaneous emission and nonintentional reflections the devices are optically and electrically isolated from each other. Ridge waveguides (RWG) form the waveguides and which also maintain the absorbing material between them. The WDM functionality is designed for a large optical bandwidth complying with the wide spectral range in FTTH applications and also reducing the polarization dependence of the WDM-coupler. Lasing is achieved by forming facet-free, λ/4-shifted, DFB (distributed feedback laser) lasers emitting directly into the waveguide. The photodiodes are waveguide photo-diodes (WGPD). Our seamless technology is also able to array the single channel diplexers to 4 to 12 channel diplexer arrays with 250μm fiber port

  7. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  8. Switching the polarity of a bacteriophage integration system.

    Science.gov (United States)

    Smith, Matthew C A; Till, Rob; Smith, Margaret C M

    2004-03-01

    During lysogenic growth many temperate bacteriophage genomes are integrated into the host's chromosome and efficient integration and excision are therefore an essential part of the phage life cycle. The Streptomyces phage phiC31 encodes an integrase related to the resolvase/invertases and is evolutionarily and mechanistically distinct from the integrase of phage lambda. We show that during phiC31 integration the polarity of the recombination sites, attB and attP, is dependent on the sequences of the two base pairs (bp) where crossover occurs. A loss or switch in polarity of the recombination sites can occur by mutation of this dinucleotide, leading to incorrectly joined products. The properties of the mutant sites implies that phiC31 integrase interacts symmetrically with the substrates, which during synapsis can align apparently freely in either of two alternative forms that lead to correct or incorrect joining of products. Analysis of the topologies of the reaction products provided evidence that integrase can synapse and activate strand exchange even when recombinant products cannot form due to mismatches at the crossover site. The topologies of the recombination products are complex and indicative of multiple pathways to product formation. The efficiency of integration of a phiC31 derivative, KC859, into an attB site with switched polarity was assayed in vivo and shown to be no different from integration into a wild-type attB. Thus neither the host nor KC859 express a factor that influences the alignment of the recombination sites at synapsis.

  9. Solution-based photodetectors for monolithically integrated low-cost short-wave infrared focal plane arrays

    Science.gov (United States)

    Heves, Emre; Kayahan, Huseyin; Gurbuz, Yasar

    2013-05-01

    In this work, PbS Colloidal Quantum Dots (CQD) based photodiodes are realized on both silicon substrates and on the replicas of the ROICs in order to demonstrate fully integrated FPAs. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimization of IC integrable process steps resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies such as 32% is achieved for photodiodes on Si substrates and high responsivities up to 5,73 A/W is achieved for photodiodes on ROIC replicas. Also these detectors achieved very high normalized detectivities such as; 1.36 x 1011 Jones and 1.42 x 1012 Jones under 1V and 2V reverse bias respectively, which is close to conventional InGaAS SWIR detectors.

  10. Integrated optical buffers for packet-switched networks

    Science.gov (United States)

    Burmeister, Emily Frances

    Routers form the backbone of the Internet, directing data to the right locations with huge throughput capacity of terabits/second) and very few errors (1 error allowed in 1012 bits). However, as the Internet continues to grow rapidly, so must the capacity of electronic routers, thereby also growing in footprint and power consumption. The energy bill alone has developers looking for an alternate solution. Today's routers can only operate with electrical signals although Internet data is transmitted optically. This requires the data to be converted from the optical domain to the electrical domain and back again. Optical routers have the potential of saving in power by omitting these conversions, but have been held back in part by the lack of a practical optical memory device. This work presents the first integrated optical buffer for next generation optical packet-switched networks. Buffering is required in a router to move packets of data in order to avoid collisions between packets heading to the same destination at the same time. The device presented here uses an InP-based two-by-two switch with a silica waveguide delay to form a recirculating buffer. Packet storage was shown with 98% packet recovery for 5 circulations. Autonomous contention resolution was demonstrated with two buffered channels to show that the technology is a realistic solution for creating multiple element buffers on multiple router ports. This thesis proposes and demonstrates the first integrated optical random access memory, thereby making a great stride toward high capacity optical routers.

  11. A novel CMOS-compatible, monolithically integrated line-scan hyperspectral imager covering the VIS-NIR range

    Science.gov (United States)

    Gonzalez, Pilar; Tack, Klaas; Geelen, Bert; Masschelein, Bart; Charle, Wouter; Vereecke, Bart; Lambrechts, Andy

    2016-05-01

    Imec has developed a process for the monolithic integration of optical filters on top of CMOS image sensors, leading to compact, cost-efficient and faster hyperspectral cameras. Different prototype sensors are available, most notably a 600- 1000 nm line-scan imager, and two mosaic sensors: a 4x4 VIS (470-620 nm range) and a 5x5 VNIR (600-1000 nm). In response to the users' demand for a single sensor able to cover both the VIS and NIR ranges, further developments have been made to enable more demanding applications. As a result, this paper presents the latest addition to imec's family of monolithically-integrated hyperspectral sensors: a line scan sensor covering the range 470-900 nm. This new prototype sensor can acquire hyperspectral image cubes of 2048 pixels over 192 bands (128 bands for the 600- 900 nm range, and 64 bands for the 470-620 nm range) at 340 cubes per second for normal machine vision illumination levels.

  12. All-optical Wavelength Converter and Monolithically Integrated Switch Based on Electro-absorption Nonlinearity

    OpenAIRE

    Zhou, Xiao Ping

    2007-01-01

    報告番号: 甲22283 ; 学位授与年月日: 2007-03-22 ; 学位の種別: 課程博士 ; 学位の種類: 博士(工学) ; 学位記番号: 博工第6488号 ; 研究科・専攻: 工学系研究科電子工学専攻

  13. SPICE Level 3 and BSIM3v3.1 characterization of monolithic integrated CMOS-MEMS devices

    Science.gov (United States)

    Staple, Bevan D.; Watts, Herman A.; Dyck, Christopher W.; Griego, A. P.; Hewlett, F. W.; Smith, James H.

    1998-09-01

    Thy monolithic integration of MicroElectroMechanical Systems (MEMS) with the driving, controlling, and signal processing electronics promises to improve the performance of micromechanical devices as well as lower their manufacturing, packaging, and instrumentation costs. Key to this integration is the proper interleaving, combining, and customizing of the manufacturing processes to produce functional integrated micromechanical devices with electronics. We have developed a MEMS-first monolithic integrated process that first seals the micromechanical devices in a planarized trench and then builds the electronics in a conventional CMOS process. To date, most of the research published on this technology has focused on the performance characteristics of the mechanical portion of the devices, with little information on the attributes of the accompanying electronics. This work attempts to reduce this information void by presenting the results of SPICE Level 3 and BSIM3v3.1 model parameters extracted for the CMOS portion of the MEMS-first process. Transistor-level simulations of MOSFET current, capacitance, output resistance, and transconductance versus voltage using the extracted model parameters closely match the measured data. Moreover, in model validation efforts, circuit-level simulation values for the average gate propagation delay in a 101-stage ring oscillator are within 13 - 18% of the measured data. These results establish the following: (1) the MEMS-first approach produces functional CMOS devices integrated on a single chip with MEMS devices and (2) the devices manufactured in the approach have excellent transistor characteristics. Thus, the MEMS-first approach renders a solid technology foundation for customers designing in the technology.

  14. Smart monolithic integration of inkjet printed thermal flow sensors with fast prototyping polymer microfluidics

    Science.gov (United States)

    Etxebarria, Ikerne; Elizalde, Jorge; Pacios, Roberto

    2016-08-01

    There is an increasing demand for built-in flow sensors in order to effectively control microfluidic processes due to the high number of available microfluidic applications. The possible solutions should be inexpensive and easy to connect to both, the microscale features and the macro setup. In this paper, we present a novel approach to integrate a printed thermal flow sensor with polymeric microfluidic channels. This approach is focused on merging two high throughput production processes, namely inkjet printing and fast prototyping technologies, in order to produce trustworthy and low cost devices. These two technologies are brought together to obtain a sensor located outside the microfluidic device. This avoids the critical contact between the sensor material and the fluids through the microchannels that can seriously damage the conducting paths under continuous working regimes. In this way, we ensure reliable and stable operation modes. For this application, a silver nanoparticle based ink and cyclic olefin polymer were used. This flow sensor operates linearly in the range of 0-10 μl min-1 for water and 0-20 μl min-1 for ethanol in calorimetric mode. Switching to anemometric mode, the range can be expanded up to 40 μl min-1.

  15. Fast packet switch architectures for broadband integrated services digital networks

    Science.gov (United States)

    Tobagi, Fouad A.

    1990-01-01

    Background information on networking and switching is provided, and the various architectures that have been considered for fast packet switches are described. The focus is solely on switches designed to be implemented electronically. A set of definitions and a brief description of the functionality required of fast packet switches are given. Three basic types of packet switches are identified: the shared-memory, shared-medium, and space-division types. Each of these is described, and examples are given.

  16. Integrated optical and nuclear simulation of a monolithic LYSO:Ce based PET detector module

    Science.gov (United States)

    Játékos, B.; Patay, G.; Lőrincz, E.; Erdei, G.

    2017-05-01

    In the recent years new digital photon counter devices (also known as silicon photomultipliers, SiPMs) were designed and manufactured to be used specifically in positron emission tomography (PET) scanners. Finely pixelated SiPM arrays have opened new opportunities in PET detector development, such as the utilization of monolithic scintillator crystals. We worked out a simulation tool (SCOPE2) to assist the optimization and characterization of such PET detector modules. In the present paper we report the first application of SCOPE2 on the performance evaluation of a prototype PET detector module. The PET detector is based on monolithic LYSO:Ce scintillator crystal and a fully digital, silicon photon-counter, SPADnet-I. A new interface has been developed for SCOPE2 to access GATE simulation results. A combination of GATE and SCOPE2 was used to simulate excitation of the prototype PET detector with an electronically collimated γ -beam. Measurement results from the collimated γ-beam experiment were compared with the combined simulation. A good agreement was observed in the tendencies of total count spectrum and point of interaction distribution. We used the performance evaluation to understand and explain the measurement results in detail.

  17. Direct optical injection locking of monolithically integrated In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As MODFET oscillators

    Science.gov (United States)

    Yang, D.; Bhattacharya, P. K.; Brock, T.

    1993-05-01

    The authors have fabricated monolithically integrated In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As 0.25-micron gate MODFET oscillators. The results of direct optical subharmonic injection locking of these oscillator circuits at 10.159 and 19.033 GHz are presented.

  18. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm

    Science.gov (United States)

    Liu, Yang; Ye, Nan; Zhou, Dai-Bing; Wang, Bao-Jun; Pan, Jiao-Qing; Zhao, Ling-Juan; Wang, Wei

    2011-02-01

    A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43 nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths, is successfully demonstrated.

  19. Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

    Science.gov (United States)

    Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

    2017-07-01

    Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

  20. Large microwave tunability of GaAs-based multiferroic heterostructure for applications in monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yajie; Gao Jinsheng; Vittoria, C; Harris, V G [Center for Microwave Magnetic Materials and Integrated Circuits, and the Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115 (United States); Heiman, D, E-mail: y.chen@neu.ed [Department of Physics, Northeastern University, Boston, MA 02115 (United States)

    2010-12-15

    Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co{sub 2}MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate-lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm{sup -1} resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV{sup -1}. This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.

  1. Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-08-01

    We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3° × 10.6°, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  2. Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

    Science.gov (United States)

    O'Brien, S.; Shealy, J. R.; Wicks, G. W.

    1991-04-01

    The monolithic integration of an intracavity modulator with a multiple quantum well (Al)GaAs laser has been accomplished with the use of selective partial interdiffusion. Interdiffusion was used to create a blue-shifted and semitransparent modulator section in a ridge laser structure. In measuring the total optical output power from the devices, steady-state extinction ratios of 20 dB were measured at reverse biases of -4.6 and -3.6 V for modulator sections with lengths of 200 and 400 microns, respectively. Shifting of the lasing mode toward longer wavelengths was also observed making the structure useful as a tunable device and for frequency modulation applications.

  3. Integrated monolithic 3D MEMS scanner for switchable real time vertical/horizontal cross-sectional imaging.

    Science.gov (United States)

    Li, Haijun; Duan, Xiyu; Qiu, Zhen; Zhou, Quan; Kurabayashi, Katsuo; Oldham, Kenn R; Wang, Thomas D

    2016-02-08

    We present an integrated monolithic, electrostatic 3D MEMS scanner with a compact chip size of 3.2 × 2.9 mm(2). Use of parametric excitation near resonance frequencies produced large optical deflection angles up to ± 27° and ± 28.5° in the X- and Y-axes and displacements up to 510 μm in the Z-axis with low drive voltages at atmospheric pressure. When packaged in a dual axes confocal endomicroscope, horizontal and vertical cross-sectional images can be collected seamlessly in tissue with a large field-of-view of >1 × 1 mm(2) and 1 × 0.41 mm(2), respectively, at 5 frames/sec.

  4. Practical considerations for integrating switch mode audio amplifiers and loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    An integration of electrodynamic loudspeakers and switch mode amplifiers has earlier been proposed in [1]. The work presented in this paper is related to the practical aspects of integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker’s voice coil as output...

  5. Practical considerations for integrating switch mode audio amplifiers and loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    An integration of electrodynamic loudspeakers and switch mode amplifiers has earlier been proposed in [1]. The work presented in this paper is related to the practical aspects of integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker’s voice coil as output...... filter, and the magnetic structure as heat sink for the amplifier....

  6. Development towards cell-to-cell monolithic integration of a thin-film solar cell and lithium-ion accumulator

    Science.gov (United States)

    Agbo, Solomon N.; Merdzhanova, Tsvetelina; Yu, Shicheng; Tempel, Hermann; Kungl, Hans; Eichel, Rüdiger-A.; Rau, Uwe; Astakhov, Oleksandr

    2016-09-01

    This work focuses on the potentials of monolithic integrated thin-film silicon solar cell and lithium ion cell in a simple cell-to-cell integration without any control electronics as a compact power solution for portable electronic devices. To demonstrate this we used triple-junction thin-film silicon solar cell connected directly to a lithium ion battery cell to charge the battery and in turn discharge the battery through the solar cell. Our results show that with appropriate voltage matching the solar cell provides efficient charging for lab-scale lithium ion storage cell. Despite the absence of any control electronics the discharge rate of the Li-ion cell through the non-illuminated solar cell can be much lower than the charging rate when the current voltage (IV) characteristics of the solar cell is matched properly to the charge-discharge characteristics of the battery. This indicates good sustainability of the ultimately simple integrated device. At the maximum power point, solar energy-to-battery charging efficiency of 8.5% which is nearly the conversion efficiency of the solar cell was obtained indicating potential for loss-free operation of the photovoltaic (PV)-battery integration. For the rest of the charging points, an average of 8.0% charging efficiency was obtained.

  7. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  8. A leaky-integrator model as a control mechanism underlying flexible decision making during task switching.

    Science.gov (United States)

    Mitani, Akinori; Sasaki, Ryo; Oizumi, Masafumi; Uka, Takanori

    2013-01-01

    The ability to switch between tasks is critical for animals to behave according to context. Although the association between the prefrontal cortex and task switching has been well documented, the ultimate modulation of sensory-motor associations has yet to be determined. Here, we modeled the results of a previous study showing that task switching can be accomplished by communication from distinct populations of sensory neurons. We proposed a leaky-integrator model where relevant and irrelevant information were stored separately in two integrators and task switching was achieved by leaking information from the irrelevant integrator. The model successfully explained both the behavioral and neuronal data. Additionally, the leaky-integrator model showed better performance than an alternative model, where irrelevant information was discarded by decreasing the weight on irrelevant information, when animals initially failed to commit to a task. Overall, we propose that flexible switching is, in part, achieved by actively controlling the amount of leak of relevant and irrelevant information.

  9. Monolithic spectrometer

    Science.gov (United States)

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  10. Numerical Analysis of Discrete Switching Prey-Predator Model for Integrated Pest Management

    Directory of Open Access Journals (Sweden)

    Changcheng Xiang

    2016-01-01

    Full Text Available The switching discrete prey-predator model concerning integrated pest management has been proposed, and the switches are guided by the economic threshold (ET. To begin with, the regular and virtual equilibria of switching system have been discussed and the key parameter bifurcation diagrams for the existence of equilibria have been proposed, which reveal the three different regions of equilibria. Besides, numerical bifurcation analyses show that the switching discrete system may have complicated dynamics behavior including chaos and the coexistence of multiple attractors. Finally, the effects of key parameters on the switching frequencies and switching times are discussed and the sensitivity analysis of varying parameter values for mean switching times has also been given. The results proved that economic threshold (ET and the growth rate (α were the key parameters for pest control.

  11. CdSe colloidal nanocrystals monolithically integrated in a pseudomorphic semiconductor epilayer

    Energy Technology Data Exchange (ETDEWEB)

    Larramendi, Erick M. [Physics Faculty-ICTM, University of Havana, Colina Universitaria, C.P. 10400 Havana (Cuba); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universitaet Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany); Schoeps, Oliver; Woggon, Ulrike [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Artemyev, Mikhail V. [Institute for Physico-Chemical Problems, Belarussian State University, Minsk 220080 (Belarus); Schikora, Detlef; Lischka, Klaus [Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universitaet Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany)

    2013-01-14

    As optically active emitters in a semiconductor matrix, core/shell and bare CdSe colloidal nanocrystals (CNCs) were monolithically incorporated in ZnSe pseudomorphic epilayers by molecular beam epitaxy (MBE). A suspension of wet chemically synthesized CNCs was sprayed ex-situ over a pseudomorphic ZnSe/GaAs(001) heterostructure using a nebulizer. Subsequently, the matrix material growth was resumed to form a capping layer by a slow MBE growth mode. Structural investigations show high crystalline quality and pseudomorphic epitaxial character of the whole hybrid CNC-matrix structure. The core/shell CNCs remain optically active following the embedding process. Their emission is blue shifted without a significant change on the spectral shape, and shows the same temperature dependence as that of the free exciton peak energy in zinc-blende CdSe at temperatures above 80 K. Our optical characterization of the samples showed that the embedded CNCs were stable and that the structure of the host was preserved. These results are encouraging for the fabrication of more complex optoelectronic devices based on CNCs.

  12. Integration of planar transformer and/or planar inductor with power switches in power converter

    Science.gov (United States)

    Chen, Kanghua; Ahmed, Sayeed; Zhu, Lizhi

    2007-10-30

    A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

  13. Simply and reliably integrating micro heaters/sensors in a monolithic PCR-CE microfluidic genetic analysis system.

    Science.gov (United States)

    Zhong, Runtao; Pan, Xiaoyan; Jiang, Lei; Dai, Zhongpeng; Qin, Jianhua; Lin, Bingcheng

    2009-04-01

    A novel fabrication process was presented to construct a monolithic integrated PCR-CE microfluidic DNA analysis system as a step toward building a total genetic analysis microsystem. Microfabricated Titanium/Platinum (Ti/Pt) heaters and resistance temperature detectors (RTDs) were integrated on the backside of a bonded glass chip to provide good thermal transfer and precise temperature detection for the drilled PCR-wells. This heater/RTD integration procedure was simple and reliable, and the resulting metal layer can be easily renewed when the Ti/Pt layer was damaged in later use or novel heater/RTD design was desired. A straightforward "RTD-calibration" method was employed to optimize the chip-based thermal cycling conditions. This method was convenient and rapid, comparing with a conventional RTD-calibration/temperature adjustment method. The highest ramping rates of 14 degrees C/s for heating and 5 degrees C/s for cooling in a 3-microL reaction volume allow 30 complete PCR cycles in about 33 min. After effectively passivating the PCR-well surface, successful lambda-phage DNA amplifications were achieved using a two- or three-temperature cycling protocol. The functionality and performance of the integrated microsystem were demonstrated by successful amplification and subsequent on-line separation/sizing of lambda-phage DNA. A rapid assay for Hepatitis B virus, one of the major human pathogens, was performed in less than 45 min, demonstrating that the developed PCR-CE microsystem was capable of performing automatic and high-speed genetic analysis.

  14. Monolithic integration of optical mode-size converter and high-speed electroabsorption modulators using laterally undercut waveguide

    Science.gov (United States)

    Wu, Tsu-Hsiu; Lin, Fang-Zheng; Yan, Hung-Jung; Wu, Jui-Pin; Chiu, Yi-Jen

    2010-02-01

    A new monolithic integration scheme of fabricating optical spot-size converter (SSC) is realized in this work. High-speed electroabsorption modulator (EAM) is used to integrate such SSC. By laterally tapering the active region of an optical waveguide through undercut active region, a vertically asymmetric waveguide coupler can be defined to form an SSC, where the top is a tapered active waveguide, and the bottom is a large core of passive waveguide mode-matched to single-mode fiber (SMF). Through the top tapered active waveguide, the effective index can be gradually varied in the propagation direction, momentarily matching the bottom low-index passive waveguide. It not only performs the resonant coupling in such asymmetric waveguide coupler, but also locks the transferred power by the tapered structure. InGaAsP/InP multiple quantum wells are used as active region of active waveguide. Based on the highly selective etching properties between InGaAsP and InP, the tapered active waveguide can be fabricated by a method, called selectively undercut-etching-active-region (UEAR), enabling the processing a narrow waveguide structure (up to submicron) by general wet etching from a large waveguide ridge. It also leads to good microwave performance of waveguide. By taking this advantage, a SSC-integrated EAM can perform high-speed electrical-to-optical (EO) response as well as low-insertion loss properties. A mode transfer efficiency of 70% is obtained in such SSC. By narrowing waveguide by UEAR, over 40 GHz of -3dB electrical-to-optical (EO) response is obtained from this device. The high efficient SSC integrated with high-speed EAM suggests that the UEAR technique can have potential for applications in high-speed optoelectronic fields.

  15. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22mW Output Power and 51 ITU 100 GHz Channels over 43 nm

    Institute of Scientific and Technical Information of China (English)

    LIU Yang; YE Nan; ZHOU Dai-Bing; WANG Bao-Jun; PAN Jiao-Qing; ZHAO Ling-Juan; WANG Wei

    2011-01-01

    @@ A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths, is successfully demonstrated.%A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43nm from 1514.05nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 m W for all output wavelengths,is successfully demonstrated.

  16. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    Science.gov (United States)

    Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

    1991-01-01

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

  17. Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

    Science.gov (United States)

    Sato, Kenji; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo

    1996-10-01

    Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode-locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained.

  18. An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector

    DEFF Research Database (Denmark)

    Saini, Vikram; Yvind, Kresten; Larsson, David

    2006-01-01

    A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integr...

  19. Development of a GaAs-Based Monolithic Surface Acoustic Wave Integrated Chemical Microsensor

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1998-10-28

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other rf applications.

  20. Shape-anchored porous polymer monoliths for integrated online solid-phase extraction-microchip electrophoresis-electrospray ionization mass spectrometry.

    Science.gov (United States)

    Nordman, Nina; Barrios-Lopez, Brianda; Laurén, Susanna; Suvanto, Pia; Kotiaho, Tapio; Franssila, Sami; Kostiainen, Risto; Sikanen, Tiina

    2015-02-01

    We report a simple protocol for fabrication of shape-anchored porous polymer monoliths (PPMs) for on-chip SPE prior to online microchip electrophoresis (ME) separation and on-chip (ESI/MS). The chip design comprises a standard ME separation channel with simple cross injector and a fully integrated ESI emitter featuring coaxial sheath liquid channel. The monolith zone was prepared in situ at the injection cross by laser-initiated photopolymerization through the microchip cover layer. The use of high-power laser allowed not only maskless patterning of a precisely defined monolith zone, but also faster exposure time (here, 7 min) compared with flood exposure UV lamps. The size of the monolith pattern was defined by the diameter of the laser output (∅500 μm) and the porosity was geared toward high through-flow to allow electrokinetic actuation and thus avoid coupling to external pumps. Placing the monolith at the injection cross enabled firm anchoring based on its cross-shape so that no surface premodification with anchoring linkers was needed. In addition, sample loading and subsequent injection (elution) to the separation channel could be performed similar to standard ME setup. As a result, 15- to 23-fold enrichment factors were obtained already at loading (preconcentration) times as short as 25 s without sacrificing the throughput of ME analysis. The performance of the SPE-ME-ESI/MS chip was repeatable within 3.1% and 11.5% RSD (n = 3) in terms of migration time and peak height, respectively, and linear correlation was observed between the loading time and peak area.

  1. Integrating switch mode audio amplifiers and electro dynamic loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    The work presented in this paper is related to integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker's voice coil as output filter, and the magnetic structure as heatsink for the amplifier.......The work presented in this paper is related to integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker's voice coil as output filter, and the magnetic structure as heatsink for the amplifier....

  2. Integrating switch mode audio power amplifiers and electro dynamic loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    The work presented in this paper is related to integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker's voice coil as output filter, and the magnetic structure as heatsink for the amplifier.......The work presented in this paper is related to integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker's voice coil as output filter, and the magnetic structure as heatsink for the amplifier....

  3. Characterization of efficiency-limiting resistance losses in monolithically integrated Cu(In,Ga)Se2 solar modules.

    Science.gov (United States)

    Yoon, Ju-Heon; Park, Jong-Keuk; Kim, Won Mok; Lee, JinWoo; Pak, Hisun; Jeong, Jeung-Hyun

    2015-01-09

    The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy.

  4. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Science.gov (United States)

    Gajos, Katarzyna; Angelopoulou, Michailia; Petrou, Panagiota; Awsiuk, Kamil; Kakabakos, Sotirios; Haasnoot, Willem; Bernasik, Andrzej; Rysz, Jakub; Marzec, Mateusz M.; Misiakos, Konstantinos; Raptis, Ioannis; Budkowski, Andrzej

    2016-11-01

    Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays with dramatically improved both intra-chip response repeatability and assay detection sensitivity.

  5. Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD

    Science.gov (United States)

    Lammert, Robert M.; Smith, Gary M.; Hughes, J. S.; Osowski, Mark L.; Jones, A. M.; Coleman, James J.

    1997-01-01

    The design and operation of multiple-quantum well (MQW) wavelength tunable distributed Bragg reflector (DBR) lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area metal-organic chemical vapor deposition (MOCVD) are presented. Uncoated devices exhibit cw threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet and 0.06 W/A from the modulator facet. After the application of facet coatings, slope efficiencies from the modulator facet increase to 0.14 W/A. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibit high extinction ratios of 40 dB at a modulator bias of 1.25 V. Photo-generated current versus optical power plots indicate that the extinction ratios are not limited by carrier build- up in the modulator quantum wells.

  6. Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing; Wang, Wei

    2005-09-01

    We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0° × 12.6°, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  7. Semiconductor optical amplifier monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converters

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Wang, Baojun; Zhou, Fan; Wang, Lufeng; Bian, Jing; Wang, Wei

    2005-09-01

    We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) were incorporated. Such combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550~1600nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0°×12.6°, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber.

  8. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  9. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  10. A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

    Institute of Scientific and Technical Information of China (English)

    Yu Changliang; Mao Luhong; Xiao Xindong; Xie Sheng; Zhang Shilin

    2009-01-01

    This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic inte grated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photo generated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM pho todetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.

  11. Diamond as a material for monolithically integrated optical and optomechanical devices

    CERN Document Server

    Rath, Patrik; Nebel, Christoph; Pernice, Wolfram H P

    2016-01-01

    Diamond provides superior optical and mechanical material properties, making it a prime candidate for the realization of integrated optomechanical circuits. Because diamond sub- strates have matured in size, efficient nanostructuring methods can be used to realize full-scale integrated devices. Here we review optical and mechanical resonators fab- ricated from polycrystalline as well as single crystalline diamond. We present relevant material properties with respect to implementing optomechanical devices and compare them with other material systems. We give an overview of diamond integrated optomechanical circuits and present the optical readout mechanism and the actuation via optical or electrostatic forces that have been implemented to date. By combining diamond nanophotonic circuits with superconducting nanowires single photons can be efficiently detected on such chips and we outline how future single photon optomechanical circuits can be realized on this platform.

  12. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: kasia.fornal@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Angelopoulou, Michailia; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Haasnoot, Willem [RIKILT Wageningen UR, Akkermaalsbos 2, 6708 WB Wageningen (Netherlands); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Marzec, Mateusz M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland)

    2016-11-01

    Highlights: • Optimization of probe immobilization with robotic spotter printing overlapping spots. • In-situ inspection of microstructured surfaces of biosensors integrated on silicon. • Imaging and chemical analysis of immobilization, surface blocking and immunoreaction. • Insight with molecular discrimination into step-by-step sensor surface modifications. • Optimized biofunctionalization improves sensor sensitivity and response repeatability. - Abstract: Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays

  13. Dry Etching of GaAs to Fabricate Via-Hole Grounds in Monolithic Microwave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    D.S. Rawal

    2009-07-01

    Full Text Available This study investigates the dry etching of 60 mm dia, 200 mm deep holes for fabrication of through substrate via holes for grounding monolithic microwave integrated circuits (MMICs, on 3-inch dia semiinsulating GaAs wafer using RIE and ICP processes with CFC and non-CFC gas chemistry, respectively. The effect of various process parameters on GaAs etch rate and resultant etch profile was investigated. Two kinds of masks, photoresist and Ni, were used to etch GaAs and performance was compared by investigating effect on etch rate, etch depth, etch profile, and surface morphology. The etch profile, etch depth, and surface morphology of as-etched samples were characterised by scanning electron microscopy. The desired 200 mm deep strawberry profile was obtained at 40 mTorr for both RIE and ICP processes with an etch rate of ~1.3 mm/min and ~4 mm/min respectively. Ni metal mask was used for RIE process due to poor photoresist selectivity, whereas ICP process utilised photoresist as mask. The vias were then metallised by depositing a thin seed layer of Ti/Au (1000 Å using radio frequency sputtering and Au (~5 mm electroplated to connect the frontside pad and back side ground plane. The typical parasitic inductance offered by these via for RIE and ICP processes was ~76 pH and 83 pH respectively, which is well within the acceptable limits. The developed process was finally integrated to in-house MMIC production line.Defence Science Journal, 2009, 59(4, pp.363-370, DOI:http://dx.doi.org/10.14429/dsj.59.1535

  14. Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution,

  15. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    Science.gov (United States)

    Ye, Nan; Liu, Yang; Wang, BaoJun; Zhou, DaiBing; Pang, JiaoQing; Zhao, LingJuan; Wang, Wei

    2011-01-01

    More than 11mW output powers for all wavelengths from the fiber and over 49 nm range tuning in sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier which is enabling access to 110 ITU 50GHz channels is demonstrated. Tilted amplifier and anti-reflection facet coating are used to suppress reflection.

  16. Modeling and design of a monolithically integrated power converter on SiC

    Science.gov (United States)

    Yu, L. C.; Sheng, K.; Zhao, J. H.

    2008-10-01

    To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.

  17. Evolution of the Department of Defense Millimeter and Microwave Monolithic Integrated Circuit Program

    Science.gov (United States)

    2007-02-01

    Dertouzos, Michael; Lester, Richard K.; Solow , Robert M.; Thorow, Lester C., “Toward a New Industrial America Scientific American, June 1989, pp...Vladimir Gelnovatch, Director of the U.S. Army Electronics Technology and Devices Laboratory; and Robert Heaston, Office of Under Secretary of Defense...Jack S. Kilby and Robert N. Noyce shared honors for the achievement. Hybrid microwave and millimeter wave integrated circuits achieved greater

  18. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yang; Ye Nan; Wang Baojun; Zhou Daibing; An Xin; Bian Jing; Pan Jiaoqing; Zhao Lingjuan; Wang Wei, E-mail: matsu@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-07-15

    High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.

  19. Ultrasensitive Nanoelectrospray Ionization-Mass Spectrometry using Poly(dimethylsiloxane) Microchips with Monolithically Integrated Emitters

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xuefei; Kelly, Ryan T.; Tang, Keqi; Smith, Richard D.

    2010-09-01

    Poly(dimethylsiloxane) (PDMS) is the most widely used substrate for microfluidic devices as it enables facile fabrication and has other distinctive properties. However, for applications involving highly sensitive nanoelectrospray ionization mass spectrometry (nanoESI-MS) detection, the use of PDMS microdevices has been hindered by the leaching of uncross-linked oligomers and other contaminants from the substrate that yields a large background of chemical noise in the mass spectra. A more general challenge is that microfluidic devices containing integrated electrospray emitters are frequently unable to operate stably in the nanoflow regime where the best sensitivity is achieved. In this report, we extracted the contaminants from PDMS substrates using a series of solvents, eliminating the background observed when untreated PDMS microchips are used for nanoESI-MS. Optimization of the integrated emitter geometry enabled stable operation at flow rates as low as 10 nL/min. Peptide concentrations of 1 nM were readily detected, representing ~170 zmol of consumed analyte, and an extrapolated detection limit of ~40 zmol; these are the lowest mass and concentration detection limits reported to date for a microchip having an integrated electrospray emitter.

  20. Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array

    Science.gov (United States)

    Becker, A.; Sichkovskyi, V.; Bjelica, M.; Rippien, A.; Schnabel, F.; Kaiser, M.; Eyal, O.; Witzigmann, B.; Eisenstein, G.; Reithmaier, J. P.

    2017-05-01

    A monolithically integrated widely tunable narrow-linewidth light source was realized on an InP-based quantum dot (QD) gain material. The quasi zero-dimensional nature of QDs and the resulting low linewidth enhancement factor enabled standalone distributed feedback (DFB) lasers with intrinsic linewidths as low as 110 kHz. An integrated device comprising four DFB lasers with on-chip micro-heaters, a 3 dB-coupler network, and a semiconductor optical amplifier (SOA), which covers the entire C+ telecom band, exhibits a linewidth of below 200 kHz independent of the SOA operation current.

  1. Monolithic integration of microfluidic channels and optical waveguides in silica on silicon

    DEFF Research Database (Denmark)

    Friis, Peter; Hoppe, Karsten; Leistiko, Otto

    2001-01-01

    Sealing of the flow channel is an important aspect during integration of microfluidic channels and optical waveguides. The uneven topography of many waveguide-fabrication techniques will lead to leakage of the fluid channels. Planarization methods such as chemical mechanical polishing or the etch......-back technique are possible, but troublesome. We present a simple but efficient alternative: By means of changing the waveguide layout, bonding pads are formed along the microfluidic channels. With the same height as the waveguide, they effectively prevent leakage and hermetically seal the channels during...

  2. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  3. A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator.

    OpenAIRE

    Roux, P.; BAEYENS, Y.; Wohlgemuth, O.; Chen, Y.K.

    2005-01-01

    A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2µm SiGe HBT process. Up to –5 dBm output power is achieved at 180 GHz using a technology with a transition frequency fT of 200 GHz and maximum oscillation frequency fMAX of 275 GHz. Preliminary phase noise measurements show a phase noise of less than –90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.

  4. 100GHz Integrated All-Optical Switch Enabled by ALD

    CERN Document Server

    Moille, Gregory; Morgenroth, Laurence; Lehoucq, Gaëlle; Neuilly, François; Hu, Bowen; Decoster, Didier; de Rossi, Alfredo

    2015-01-01

    The carrier lifetime of a photonic crystal all-optical switch is optimized by controlling the surface of GaAs by Atomic Layer Deposition. We demonstrate an all optical modulation capability up to 100GHz at Telecom wavelengths, with a contrast as high as 7dB. Wavelength conversion has also been demonstrated at a repetition rate of 2.5GHz with average pump power of about 0.5mW

  5. Towards monolithically integrated CMOS cameras for active imaging with 600 GHz radiation

    Science.gov (United States)

    Boppel, Sebastian; Lisauskas, Alvydas; Krozer, Viktor; Roskos, Hartmut G.

    2012-02-01

    We explore terahertz imaging with CMOS field-effect transistors exploiting their plasmonic detection capability and the advantages of CMOS technology for the fabrication of THz cameras with respect to process stability, array uniformity, ease of integration of additional functionality, scalability and cost-effectiveness. A 100×100-pixel camera with an active area of 20×20 mm² is physically simulated by scanning single detectors and groups of a few detectors in the image plane. Using detectors with a noise-equivalent power of 43 pW/√Hz, a distributed illumination of 432 μW at 591.4 GHz, and an integration time of 20 ms (for a possible frame rate of 17 fps), this virtual camera allows to obtain images with a dynamic range of at least 20 dB and a resolution approaching the diffraction limit. Imaging examples acquired in direct and heterodyne detection mode, and in transmission and reflection geometry, show the potential for real-time operation. It is demonstrated that heterodyning (i) improves the dynamic range substantially even if the radiation from the local oscillator is distributed over the camera area, and (ii) allows sensitive determination of object-induced phase changes, which promises the realization of coherent imaging systems.

  6. A Quasi-Elliptic Bandpass Filter-Integrated Single-Pole Double-Throw Switch

    Science.gov (United States)

    Ji, Yu-Xue; Xu, Jin; Li, Zhao-Zhao; Wang, Huan; Huang, Jin-Jie

    2017-03-01

    This paper proposes a quasi-elliptic bandpass filter-integrated single-pole double-throw (SPDT) switch. The series-parallel configuration of p-i-n diodes embedded into the impedance matching circuit is proposed to combine two quasi-elliptic response bandpass filters to constitute the proposed SPDT switch. To validate our design approach, a proposed quasi-elliptic bandpass filter-integrated SPDT switch is designed and fabricated with a central frequency of 1.25 GHz and a 3 dB fractional bandwidth of 16 %. Low insertion loss in the on state and good isolation in the off state are achieved. The switch size including bias circuits but excluding feeding lines is 0.447λg×0.134λg.

  7. Development of Superconducting Magnetic Heat Switches for an Ideal Integrating Bolometer

    Science.gov (United States)

    Nagler, P. C.; Canavan, E.; De Alba, R.; Stevenson, T. R.

    2016-07-01

    We are developing an ideal integrating bolometer (IIB), a novel detector for far-infrared applications. An IIB consists of a dissipationless temperature sensor weakly coupled to a thermal bath through a heat switch. If the heat switch's thermal conductance in the "off" state is much smaller than its conductance in the "on" state, the thermometer temperature will depend linearly on integrated incident power, until the bolometer temperature is reset by changing the conductance to the "on" state. A key component of an IIB is the heat switch, the subject of this paper. We have fabricated and tested prototype IIB devices designed to demonstrate a superconducting magnetic heat switch on both solid substrates and membranes. In this work, we will present details on the design, fabrication, and experimental performance of our prototype IIB devices.

  8. Physical and chemical sensing using monolithic semiconductor optical transducers

    Science.gov (United States)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  9. On-chip optical phase locking of single growth monolithically integrated Slotted Fabry Perot lasers.

    Science.gov (United States)

    Morrissey, P E; Cotter, W; Goulding, D; Kelleher, B; Osborne, S; Yang, H; O'Callaghan, J; Roycroft, B; Corbett, B; Peters, F H

    2013-07-15

    This work investigates the optical phase locking performance of Slotted Fabry Perot (SFP) lasers and develops an integrated variable phase locked system on chip for the first time to our knowledge using these lasers. Stable phase locking is demonstrated between two SFP lasers coupled on chip via a variable gain waveguide section. The two lasers are biased differently, one just above the threshold current of the device with the other at three times this value. The coupling between the lasers can be controlled using the variable gain section which can act as a variable optical attenuator or amplifier depending on bias. Using this, the width of the stable phase locking region on chip is shown to be variable.

  10. Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

    Science.gov (United States)

    Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

    2017-08-16

    The mid-infrared (2.5 infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

  11. Enhancing flow boiling heat transfer in microchannels for thermal management with monolithically-integrated silicon nanowires.

    Science.gov (United States)

    Li, D; Wu, G S; Wang, W; Wang, Y D; Liu, Dong; Zhang, D C; Chen, Y F; Peterson, G P; Yang, Ronggui

    2012-07-11

    Thermal management has become a critical issue for high heat flux electronics and energy systems. Integrated two-phase microchannel liquid-cooling technology has been envisioned as a promising solution, but with great challenges in flow instability. In this work, silicon nanowires were synthesized in situ in parallel silicon microchannel arrays for the first time to suppress the flow instability and to augment flow boiling heat transfer. Significant enhancement in flow boiling heat transfer performance was demonstrated for the nanowire-coated microchannel heat sink, such as an early onset of nucleate boiling, a delayed onset of flow oscillation, suppressed oscillating amplitudes of temperature and pressure drop, and an increased heat transfer coefficient.

  12. Monolithic integration of microfluidic channels and optical waveguides in silica on silicon.

    Science.gov (United States)

    Friis, P; Hoppe, K; Leistiko, O; Mogensen, K B; Hübner, J; Kutter, J P

    2001-12-01

    Sealing of the flow channel is an important aspect during integration of microfluidic channels and optical waveguides. The uneven topography of many waveguide-fabrication techniques will lead to leakage of the fluid channels. Planarization methods such as chemical mechanical polishing or the etch-back technique are possible, but troublesome. We present a simple but efficient alternative: By means of changing the waveguide layout, bonding pads are formed along the microfluidic channels. With the same height as the waveguide, they effectively prevent leakage and hermetically seal the channels during bonding. Negligible influence on light propagation is found when 10-mum-wide bonding pads are used. Fabricated microsystems with application in absorbance measurements and flow cytometry are presented.

  13. Monolithic integration of GMR sensors for standard CMOS-IC current sensing

    Science.gov (United States)

    De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

    2017-09-01

    In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

  14. Towards monolithic integration of mode-locked vertical cavity surface emitting laser

    Science.gov (United States)

    Aldaz, Rafael I.

    2007-12-01

    The speed and performance of today's high end computing and communications systems have placed difficult but still feasible demands on off-chip electrical interconnects. However, future interconnect systems may need aggregate bandwidths well into the terahertz range thereby making electrical bandwidth, density, and power targets impossible to meet. Optical interconnects, and specifically compact semiconductor mode-locked lasers, could alleviate this problem by providing short pulses in time at 10s of GHz repetition rates for Optical Time Division Multiplexing (OTDM) and clock distribution applications. Furthermore, the characteristic spectral comb of frequencies of these lasers could also serve as a multi-wavelength source for Wavelength Division Multiplexing (WDM) applications. A fully integrated mode-locked Vertical Cavity Surface Emitting Laser (VCSEL) is proposed as a low-cost high-speed source for these applications. The fundamental laser platform for such a device has been developed and a continuous-wave version of these lasers has been fabricated and demonstrated excellent results. Output powers close to 60mW have been obtained with very high beam quality factor of M2 unassisted ultrafast QD saturable absorbers, without the need to incorporate high concentrations of non radiative recombination centers by either ion-implantation or low temperature growth.

  15. An Integrated Broadband Switching System with Narrowband Service Support

    Institute of Scientific and Technical Information of China (English)

    GONG Xiangyang; ZHANG Peng; CHENG Shiduan

    2001-01-01

    It is considered that ATM is not suitable for traditional narrowband services such as voice because of large adapting delay. In this paper,we present an ATM-based broadband switching system, which is capable of supporting narrowband services. A composite cell adapting method is adopted in this system to reduce adapting delay and guarantee QoS (Quality of Service). In the realized system, several key parameters have been measured. The results prove that it can guarantee perfect QoS and relative high bandwidth efficiency.

  16. On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

    Science.gov (United States)

    Matsuda, Nobuyuki; Karkus, Peter; Nishi, Hidetaka; Tsuchizawa, Tai; Munro, William J; Takesue, Hiroki; Yamada, Koji

    2014-09-22

    We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

  17. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Dept. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Kong, X.; Trampert, A. [Paul-Drude-Institut fuer Festkoeperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-05-06

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  18. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    Science.gov (United States)

    Albert, S.; Bengoechea-Encabo, A.; Kong, X.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A.

    2013-05-01

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  19. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  20. Portable Userspace Virtual Filesystem Switch

    Directory of Open Access Journals (Sweden)

    Łukasz Faber

    2013-01-01

    Full Text Available Multiple different filesystems — including disk-based, network, distributed, abstract — arean integral part of every operating system. They are usually written as kernel modules and abstracted to the user via a virtual filesystem switch. In this paper we analyse the feasibility of reimplementing the virtual filesystem switch as a userspace daemon and applicability of this approach in real-life usage. Such reimplementation will require a way to virtualise processes behaviour related to filesystem operations. The problem is non-trivial, as we assume limited capabilities of the VFS switch implemented in userspace. We present a layered architecture comprising of a monitoring process, the VFS abstraction and real filesystem implementations. All working in userspace. Then, we evaluate this solution in four areas: portability, feasibility, usability and performance. Our results demonstrate possible gains in using the userspace-based approach with monolithic kernels, but also underline problems that are encountered in this approach.

  1. Compact monolithic capacitive discharge unit

    Science.gov (United States)

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  2. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-03-03

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  3. Area-Efficiency Trade-Offs in Integrated Switched-Capacitor DC-DC Converters

    DEFF Research Database (Denmark)

    Spliid, Frederik Monrad; Larsen, Dennis Øland; Knott, Arnold

    2016-01-01

    This paper analyzes the relationship between efficiency and chip area in a fully integrated switched capacitor voltage divider dc-dc converter implemented in 180nm-technology and a 1/2 topology. A numerical algorithm for choosing the optimal sizes of individual components, in terms of power loss...

  4. Lagrangian Modeling and Control of Switching Networks with Integrated Coupled Magnetics

    NARCIS (Netherlands)

    Scherpen, Jacquelien M.A.; Jeltsema, Dimitri; Klaassens, J. Ben

    2000-01-01

    In this paper a method is presented to build an Euler-Lagrange model for electrical networks, including switches and integrated (non-ideal) coupled-magnetics, in a structured general way. One of the advantages of emphasizing the physical structure of these systems is its functionality during the

  5. Lagrangian Modeling and Control of Switching Networks with Integrated Coupled Magnetics

    NARCIS (Netherlands)

    Scherpen, Jacquelien M.A.; Jeltsema, Dimitri; Klaassens, J. Ben

    2000-01-01

    In this paper a method is presented to build an Euler-Lagrange model for electrical networks, including switches and integrated (non-ideal) coupled-magnetics, in a structured general way. One of the advantages of emphasizing the physical structure of these systems is its functionality during the con

  6. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    Science.gov (United States)

    Leonard, Regis F.; Bhasin, Kul B.

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure. (For individual items see A93-25777 to A93-25814)

  7. A 3D porous polymer monolith-based platform integrated in poly(dimethylsiloxane) microchips for immunoassay.

    Science.gov (United States)

    Kang, Qin-Shu; Shen, Xiao-Fan; Hu, Na-Na; Hu, Meng-Jia; Liao, Hui; Wang, Han-Zhong; He, Zhi-Ke; Huang, Wei-Hua

    2013-05-01

    In this work, we demonstrate the immunocapture and on-line fluorescence immunoassay of protein and virus based on porous polymer monoliths (PPM) in microfluidic devices. Poly(glycidyl methacrylate-co-ethylene glycol dimethacrylate) [poly(GMA-co-EGDMA)] monoliths were successfully synthesized in the polydimethylsiloxane (PDMS) microfluidic channels by in situ UV-initiated free radical polymerization. After surface modification, PPM provides a high-surface area and specific affinity 3D substrate for immunoassays. Combining with well controlled microfluidic devices, the direct immunoassay of IgG and sandwich immunoassay of inactivated H1N1 influenza virus using 5 μL sample has been accomplished, with detection limits of 4 ng mL(-1) and less than 10 pg mL(-1), respectively. The enhanced detection sensitivity is due to both high surface area of PPM and flow-through design. The detection time was obviously decreased mainly due to the shortened diffusion distance and improved convective mass transfer inside the monolith, which accelerates the reaction kinetics between antigen and antibody. This work provides a novel microfluidic immunoassay platform with high efficiency thereby enabling fast and sensitive immunoassay.

  8. Bichromatic tuning of reflection bands in integrated CLC reflectors for optical switches, gates, and logic

    Science.gov (United States)

    Wu, Shing-Trong; Fuh, Andy Ying-Guey; Ho, Shau-Jung; Li, Ming-Shian

    2015-03-01

    This study investigates the bichromatic tuning of cholesteric liquid crystal (CLC) reflection bands from reflectors containing chiral azo dopants. Because the chiral azo molecules change their helical twist power in reversible photoisomerization, the reflection bands of the CLCs are modulated using purple and green laser beams. The CLC reflectors are integrated into an optical gate that can be used to modulate output spectra. We also apply the integrated system in optical switching and logic.

  9. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

    Science.gov (United States)

    Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

    2016-08-01

    In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

  10. Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System

    CERN Document Server

    Sipahigil, Alp; Sukachev, Denis D; Burek, Michael J; Borregaard, Johannes; Bhaskar, Mihir K; Nguyen, Christian T; Pacheco, Jose L; Atikian, Haig A; Meuwly, Charles; Camacho, Ryan M; Jelezko, Fedor; Bielejec, Edward; Park, Hongkun; Lončar, Marko; Lukin, Mikhail D

    2016-01-01

    Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantu...

  11. Contraceptive discontinuation and switching among couples receiving integrated HIV and family planning services in Lusaka, Zambia

    Science.gov (United States)

    Haddad, Lisa; Wall, Kristin M; Vwalika, Bellington; Htee Khu, Naw; Brill, Ilene; Kilembe, William; Stephenson, Rob; Chomba, Elwyn; Vwalika, Cheswa; Tichacek, Amanda; Allen, Susan

    2014-01-01

    Objective To describe predictors of contraceptive method discontinuation and switching behaviors among HIV positive couples receiving couples' voluntary HIV counseling and testing services in Lusaka, Zambia. Design Couples were randomized in a factorial design to two family planning educational intervention videos, received comprehensive family planning services, and were assessed every 3-months for contraceptive initiation, discontinuation and switching. Methods We modeled factors associated with contraceptive method upgrading and downgrading via multivariate Andersen-Gill models. Results Most women continued the initial method selected after randomization. The highest rates of discontinuation/switching were observed for injectable contraceptive and intrauterine device users. Time to discontinuing the more effective contraceptive methods or downgrading to oral contraceptives or condoms was associated with the women's younger age, desire for more children within the next year, heavy menstrual bleeding, bleeding between periods, and cystitis/dysuria. Health concerns among women about contraceptive implants and male partners not wanting more children were associated with upgrading from oral contraceptives or condoms. HIV status of the woman or the couple was not predictive of switching or stopping. Conclusions We found complicated patterns of contraceptive use. The predictors of contraception switching indicate that interventions targeted to younger couples that address common contraception-related misconceptions could improve effective family planning utilization. We recommend these findings be used to increase the uptake and continuation of contraception, especially long acting reversible contraceptive (LARC) methods, and that fertility-goal based, LARC-focused family planning be offered as an integral part of HIV prevention services. PMID:24088689

  12. Efficient regenerative wavelength conversion at 10Gbit/s over C- and L-band (80nm span) using a Mach-Zehnder interferometer with monolithically integrated semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Dülk, M.; Fischer, St.; Gamper, E.;

    2000-01-01

    A demonstration is presented of 10Gbit/s 2R regenerative wavelength up- and down-conversion within the C-band as well as up-conversion to the L-band using a monolithically integrated Mach-Zehnder interferometer module with semiconductor optical amplifiers (MZI-SOAs). The converted output signals ...

  13. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    Science.gov (United States)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  14. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Science.gov (United States)

    Liu, Hong-Bo; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Zhou, Fan; Wang, Bao-Jun; Wang, Wei

    2008-10-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6mW. The wavelength tuning range covers 30nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

  15. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-Bo; ZHAO Ling-Juan; PAN Jiao-Qing; ZHU Hong-Liang; ZHOU Fan; WANG Bao-Jun; WANG Wei

    2008-01-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well eleetroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI)for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections,which reduces internal absorption loss. The experimental results show that the threshold current Ith=62 mA,and output power reaches 3.6 roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of -5 V.

  16. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

    Science.gov (United States)

    Kowsz, Stacy J; Young, Erin C; Yonkee, Benjamin P; Pynn, Christopher D; Farrell, Robert M; Speck, James S; DenBaars, Steven P; Nakamura, Shuji

    2017-02-20

    We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

  17. Monoliths in Bioprocess Technology

    Directory of Open Access Journals (Sweden)

    Vignesh Rajamanickam

    2015-04-01

    Full Text Available Monolithic columns are a special type of chromatography column, which can be used for the purification of different biomolecules. They have become popular due to their high mass transfer properties and short purification times. Several articles have already discussed monolith manufacturing, as well as monolith characteristics. In contrast, this review focuses on the applied aspect of monoliths and discusses the most relevant biomolecules that can be successfully purified by them. We describe success stories for viruses, nucleic acids and proteins and compare them to conventional purification methods. Furthermore, the advantages of monolithic columns over particle-based resins, as well as the limitations of monoliths are discussed. With a compilation of commercially available monolithic columns, this review aims at serving as a ‘yellow pages’ for bioprocess engineers who face the challenge of purifying a certain biomolecule using monoliths.

  18. Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

    Institute of Scientific and Technical Information of China (English)

    XU Cheng; CHEN Bomy; LIU Bo; CHEN Yi-Feng; LIANG Shuang; SONG Zhi-Tang; FENG Song-Lin; WAN Xu-Dong; YANG Zuo-Ya; XIE Joseph

    2008-01-01

    A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18 μm complementary metal-oxide semiconductor process technology.It shows steady switching characteristics in the dc current-voltage measurement.The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained.These results show the feasibility of integrating phase change memory cell with MOSFET.

  19. Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra.

    Science.gov (United States)

    Lee, Kwanjae; Choi, Ilgyu; Lee, Cheul-Ro; Chung, Tae-Hoon; Kim, Yoon Seok; Jeong, Kwang-Un; Chung, Dong Chul; Kim, Jin Soo

    2017-08-02

    We report a phosphor-free white light-emitting diodes (LED) realized by the monolithic integration of In0.18Ga0.82N/GaN (438 nm, blue), In0.26Ga0.74N/GaN (513 nm, green), and In0.45Ga0.55N/In0.13Ga0.87N (602 nm, red) quantum wells (QWs) as an active medium. The QWs corresponding to blue and green light were grown using a conventional growth mode. For the red spectral emission, five-stacked In0.45Ga0.55N/In0.13Ga0.87N QWs were realized by the so-called Ga-flow-interruption (Ga-FI) technique, wherein the Ga supply was periodically interrupted during the deposition of In0.3Ga0.7N to form an In0.45Ga0.55N well. The vertical and lateral distributions of the three different light emissions were investigated by fluorescence microscope (FM) images. The FM image measured at a focal point in the middle of the n-GaN cladding layer for the red-emitting LED shows that light emissions with flower-like patterns with six petals are periodically observed. The chromaticity coordinates of the electroluminescence spectrum for the white LEDs at an injection current of 80 mA are measured to be (0.316, 0.312), which is close to ideal white light. In contrast with phosphor-free white-light-emitting devices based on nanostructures, our white light device exhibits a mixture of three independent wavelengths by monolithically grown InGaN-based QWs, thus demonstrating a more facile technique to obtain white LEDs.

  20. Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission.

    Science.gov (United States)

    Kang, Chang-Mo; Kang, Seok-Jin; Mun, Seung-Hyun; Choi, Soo-Young; Min, Jung-Hong; Kim, Sanghyeon; Shim, Jae-Phil; Lee, Dong-Seon

    2017-09-04

    In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530-630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.

  1. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

    Science.gov (United States)

    Tian, Ye; Zetterling, Carl-Mikael

    2017-09-01

    This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

  2. A hybrid fluorous monolithic capillary column with integrated nanoelectrospray ionization emitter for determination of perfluoroalkyl acids by nano-liquid chromatography-nanoelectrospray ionization-mass spectrometry/mass spectrometry.

    Science.gov (United States)

    Zhang, Haiyang; Ou, Junjie; Wei, Yinmao; Wang, Hongwei; Liu, Zhongshan; Zou, Hanfa

    2016-04-01

    A hybrid fluorous monolithic column was simply prepared via photo-initiated free radical polymerization of an acrylopropyl polyhedral oligomeric silsesquioxane (acryl-POSS) and a perfluorous monomer (2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl acrylate) in UV-transparent fused-silica capillaries within 5min. The physical characterization of hybrid fluorous monolith, including scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectroscopy, mercury intrusion porosimetry (MIP) and nitrogen adsorption/desorption measurement was performed. Chromatographic performance was also evaluated by capillary liquid chromatography (cLC). Due to the fluorous-fluorous interaction between fluorous monolith and analytes, fluorobenzenes could well be separated, and the column efficiencies reached 86,600-92,500plates/m at the velocity of 0.87mm/s for alkylbenzenes and 51,900-76,000plates/m at the velocity of 1.10mm/s for fluorobenzenes. Meanwhile, an approach to integrate nanoelectrospray ionization (ESI) emitter with hybrid fluorous monolithic column was developed for quantitative determination of perfluoroalkyl acids by nanoHPLC-ESI-MS/MS. The integration design could minimize extracolumn volume, thus excluding undesirable peak broadening and improving separation performance.

  3. Thin film CIGS photovoltaic modules: monolithic integration and advanced packaging for high performance, high reliability and low cost

    Science.gov (United States)

    Eldada, Louay

    2011-01-01

    In recent years, thin-film photovoltaic companies started realizing their low manufacturing cost potential, and have been grabbing an increasingly larger market share. Copper Indium Gallium Selenide (CIGS) is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, and a fast high-quality CIGS reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable cover plates in the first stage, while in the second stage the CIGS layer is formed by rapid heating with Se confinement. HelioVolt also developed best-in-class packaging technologies that provide unparalleled environmental stability. High quality CIGS films with large grains were fabricated on the production line, and high-performance highreliability monolithic modules with a form factor of 120 cm × 60 cm are being produced at high yield and low cost. With conversion efficiency levels around 14% for cells and 12% for modules, HelioVolt is commercializing the process on its first production line with 20 MW capacity, and is planning its next GW-scale factory.

  4. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  5. System integration of the ITER switching networks, fast discharge units and busbars

    Energy Technology Data Exchange (ETDEWEB)

    Milani, Francesco, E-mail: francesco.milani@iter.org [ITER Organization, Route de Vinon sur Verdon, 13115 Saint-Paul-Lez-Durance (France); Roshal, Alexander [D.V. Efremov Scientific Institute of Electrophysical Apparatus, 189632 St. Petersburg (Russian Federation); Benfatto, Ivone; Song, Inho; Thomsen, Jeff [ITER Organization, Route de Vinon sur Verdon, 13115 Saint-Paul-Lez-Durance (France)

    2011-10-15

    In ITER, switching networks and fast discharge units consist of large resistor banks which are inserted in the toroidal field, central solenoid and poloidal field circuits by means of appropriate circuit breakers. These breakers are connected by water-cooled aluminum busbars to the AC/DC thyristor converters on one side and to the superconducting coils on the other side. Switching networks are used at every pulse for plasma initiation and ramp-up, whereas fast discharge units are used to protect the superconducting coils in case of quench, by dissipating the energy stored in the coils into the resistors. This paper deals with system integration aspects, a subject which has become more and more important as a consequence of the necessity to define the requirements for the ITER buildings. In particular, seismic analyses carried out for the finalization of the layout of the toroidal field circuit busbars in the Tokamak building, features of the Resistor building and issues associated to the routing of the cables connecting the resistors to the switches located in the Tokamak complex will be described.

  6. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  7. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  8. Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2017-02-01

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon Distributed Bragg Reflector (DBR) tunable lasers and silicon Mach-Zehnder modulator (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in details. Data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the lasers Bragg reflectors.

  9. Technology development of RF MEMS switches on printed circuit boards

    Science.gov (United States)

    Chang, Hung-Pin

    Today, some engineers have shifted their focus on the micro-electro-mechanical system (MEMS) to pursue better technological advancements. Recent development in RF MEMS technologies have lead to superior switch characteristics, i.e., very low insertion loss, very low power requirements, and high isolation comparing to the conventional semiconductor devices. This success has promised the potential of MEMS to revolutionize RF and microwave system implementation for the next generation of communication applications. However, RF MEMS switches integrated monolithically with various RF functional components on the same substrate to create multifunctional and reconfigurable complete communication systems remains to be a challenge research topic due to the concerns of the high cost of packaging process and the high cost of RF matching requirements in module board implementation. Furthermore, the fabrication of most RF MEMS switches requires thickness control and surface planarization of wide metal lines prior to deposition of a metal membrane bridge, which poses a major challenge to manufacturability. To ease the fabrication of RF MEMS switches and to facilitate their integration with other RF components such as antennas, phase delay lines, tunable filters, it is imperative to develop a manufacturable RF MEMS switch technology on a common substrate housing all essential RF components. Development of a novel RF MEMS technology to build a RF MEMS switch and provide a system-level packaging on microwave laminated printed circuit boards (PCBs) are proposed in this dissertation. Two key processes, high-density inductively coupled plasma chemical vapor deposition (HDICP CVD) for low temperature dielectric deposition, and compressive molding planarization (COMP) for the temporary sacrificial polymer planarization have been developed for fabricating RF MEMS switches on PCBs. Several membrane-type capacitive switches have been fabricated showing excellent RF performance and dynamic

  10. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-10-27

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  11. Mode-locked InAs/InP quantum-dash-based DBR laser with monolithically integrated SOA

    Science.gov (United States)

    Joshi, Siddharth; Chimot, Nicolas; Barbet, Sophie; Accard, Alain; Lelarge, François

    2014-02-01

    We present the first demonstration of InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits. The laser cavity is closed using a specific Bragg reflector without compromising the mode-locking performance of the laser. This enables the integration of single-section mode- locked laser on photonic integrated circuits as on-chip frequency comb source. As a demonstration, we integrate the Fabry Perot laser with a semiconductor optical amplifier. Such a device could be used for amplification or modulation of the frequency generated comb. We thus investigate the device operation to obtain a NRZ modulated comb.

  12. Stationary Optical Concentrator Designs and Wafer Scale Monolithic Integration of Semiconductor Devices for Next Generation Photovoltaic Panels

    Science.gov (United States)

    Kim, Jung Min

    A major barrier in utilizing solar energy for large scale deployment is the cost of the photovoltaic (PV) systems. Several approaches have been used for the cost reduction such as by modifying PV system designs in addition to enhancing the efficiency of solar cells. Due to the high cost of materials, minimizing the use of solar cells such as in concentrator type systems is highly attractive for reducing the cost of the PV modules by focusing the incident light onto the PV cell. However concentrator PV systems (CPV) require constant tracking of the sun and hence are complex in design and expensive to operate, except in limited situations such as large scale PV power plants. It is desirable to design new concentrator type systems that do not require continuous tracking of the sun. These systems could ultimately reduce the PV system cost to a minimum while maximizing the power conversion efficiency. In this thesis we propose a simple design for a stationary concentrator photovoltaic (SCPV) system that could significantly reduce the cost of generating electricity using PV devices. Using optical ray tracing simulations, we have been able to design SCPV systems that could reduce the PV module cost by 2--10 times without compromising on the power conversion efficiency of the system. Another alternative approach for sustainable high efficiency PV system design is to develop low cost PV cells for terrestrial applications. To meet the demands of low cost and large scale production, larger and thinner (or flexible) substrates are required. We demonstrated the feasibility of fabricating monolithic interconnected PV devices at the wafer scale (2 inch wafers). In this study, GaSb PV cells grown on semi-insulating GaAs were used as the model material. Crucial device fabrication steps such as a selective etching process have been developed that is necessary for isolating individual devices on the wafer and interconnecting them with sub-micron scale accuracy. Selective etching of

  13. Cylinder head covers with integrated, switched cyclone-type oil mist separator; Zylinderkopfhauben mit integriertem geschalteten Zyklon-Oelnebelabscheider

    Energy Technology Data Exchange (ETDEWEB)

    Hintze, S.; Janssen, H.; Karl, W.; Soares, J. [Polytec Automotive GmbH und Co. KG, Lohne (Germany)

    2006-05-15

    Polytec Automotive has developed a new engine ventilation system for integration into cylinder head covers with operating features which distinguish it from all other systems presently on the market. The performance curve for this new switched, patented cyclone separator has been optimized at low flow rates and tuned to reduce the pressure in the high flow range. The wide operating range allows the separating performance of this switched cyclone-type separator to be adjusted to all engines, ensuring universal application. (orig.)

  14. Robust temperature change rate actuated valving and switching for highly integrated centrifugal microfluidics.

    Science.gov (United States)

    Keller, M; Czilwik, G; Schott, J; Schwarz, I; Dormanns, K; von Stetten, F; Zengerle, R; Paust, N

    2017-02-28

    We present new unit operations for valving and switching in centrifugal microfluidics that are actuated by a temperature change rate (TCR) and controlled by the rotational frequency. Implementation is realized simply by introducing a comparatively large fluidic resistance to an air vent of a fluidic structure downstream of a siphon channel. During temperature decrease at a given TCR, the air pressure inside the downstream structure decreases and the fluidic resistance of the air vent slows down air pressure compensation allowing a thermally induced underpressure to build up temporarily. Thereby the rate of temperature change determines the time course of the underpressure for a given geometry. The thermally induced underpressure pulls the liquid against a centrifugal counterpressure above a siphon crest, which triggers the valve or switch. The centrifugal counterpressure (adjusted by rotation) serves as an independent control parameter to allow or prevent valving or switching at any TCR. The unit operations are thus compatible with any temperature or centrifugation protocol prior to valving or switching. In contrast to existing methods, this compatibility is achieved at no additional costs: neither additional fabrication steps nor additional disk space or external means are required besides global temperature control, which is needed for the assay. For the layout, an analytical model is provided and verified. The TCR actuated unit operations are demonstrated, first, by a stand-alone switch that routes the liquid to either one of the two collection chambers (n = 6) and, second, by studying the robustness of TCR actuated valving within a microfluidic cartridge for highly integrated nucleic acid testing. Valving could safely be prevented during PCR by compensating the thermally induced underpressure of 3.52 kPa with a centrifugal counterpressure at a rotational frequency of 30 Hz with a minimum safety range to valving of 2.03 kPa. Subsequently, a thermally induced

  15. A linear monolithic 4-6 on silicon IR detector array

    Science.gov (United States)

    Vandamme, J.; Vermeiren, J.; Zogg, H.; Masek, J.; Fabbricotti, M.

    1992-12-01

    A linear array of monolithically grown PbTe and PbSnSe detectors on (111)-Si for MWIR and TIR imaging applications was designed and processed. The array consists of a staggered row of 2 by 128 detectors on a 100 micrometers pitch. The readout circuitry, integrated on the Si substrate consists of a COS multiplexer with a direct injection input stage, a charge reduction stage and charge to voltage conversion stage for each individual detector. This XDI (MultipeXed Direct Injection) circuit also allows for on-chip nonuniformity compensation with a switched capacitor network.

  16. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

    Science.gov (United States)

    Zhang, Yun-Xiao; Liao, Zai-Yi; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Wang, Wei

    2010-07-01

    We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -6.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip.

  17. Monolithic resonant optical reflector laser diodes

    Science.gov (United States)

    Hirata, T.; Suehiro, M.; Maeda, M.; Hihara, M.; Hosomatsu, H.

    1991-10-01

    The first monolithic resonant optical reflector laser diode that has a waveguide directional coupler and two DBR reflectors integrated by compositional disordering of quantum-well heterostructures is described. A linewidth of 440 kHz was obtained, and this value is expected to be greatly decreased by reducing the propagation loss in the integrated waveguide.

  18. Monolithic integration of a lithium niobate microresonator with a free-standing waveguide using femtosecond laser assisted ion beam writing

    Science.gov (United States)

    Fang, Zhiwei; Xu, Yingxin; Wang, Min; Qiao, Lingling; Lin, Jintian; Fang, Wei; Cheng, Ya

    2017-01-01

    We demonstrated integrating a high quality factor lithium niobate microdisk resonator with a free-standing membrane waveguide. Our technique is based on femtosecond laser direct writing which produces the pre-structure, followed by focused ion beam milling which reduces the surface roughness of sidewall of the fabricated structure to nanometer scale. Efficient light coupling between the integrated waveguide and microdisk was achieved, and the quality factor of the microresonator was measured as high as 1.67 × 105. PMID:28358135

  19. All-optical integrated logic operations based on chemical communication between molecular switches.

    Science.gov (United States)

    Silvi, Serena; Constable, Edwin C; Housecroft, Catherine E; Beves, Jonathon E; Dunphy, Emma L; Tomasulo, Massimiliano; Raymo, Françisco M; Credi, Alberto

    2009-01-01

    Molecular logic gates process physical or chemical "inputs" to generate "outputs" based on a set of logical operators. We report the design and operation of a chemical ensemble in solution that behaves as integrated AND, OR, and XNOR gates with optical input and output signals. The ensemble is composed of a reversible merocyanine-type photoacid and a ruthenium polypyridine complex that functions as a pH-controlled three-state luminescent switch. The light-triggered release of protons from the photoacid is used to control the state of the transition-metal complex. Therefore, the two molecular switching devices communicate with one another through the exchange of ionic signals. By means of such a double (optical-chemical-optical) signal-transduction mechanism, inputs of violet light modulate a luminescence output in the red/far-red region of the visible spectrum. Nondestructive reading is guaranteed because the green light used for excitation in the photoluminescence experiments does not affect the state of the gate. The reset is thermally driven and, thus, does not involve the addition of chemicals and accumulation of byproducts. Owing to its reversibility and stability, this molecular device can afford many cycles of digital operation.

  20. DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

    Science.gov (United States)

    Deshpande, V.; Djara, V.; O'Connor, E.; Hashemi, P.; Balakrishnan, K.; Caimi, D.; Sousa, M.; Czornomaz, L.; Fompeyrine, J.

    2017-02-01

    We report the first RF characterization of short-channel replacement metal gate (RMG) InGaAs-OI nFETs built in a 3D monolithic (3DM) CMOS process. This process features RMG InGaAs-OI nFET top layer and SiGe-OI fin pFET bottom layer. We demonstrate state-of-the-art device integration on both levels. The bottom layer SiGe-OI pFETs are fabricated with a Gate-First (GF) process with fins and featuring epitaxial raised source drain (RSD) as well as silicide contact layer. The top layer InGaAs nFETs are fabricated with a RMG process featuring a self-aligned epitaxial raised source drain (RSD). We show that the 3D monolithic integration scheme does not degrade the performance of the bottom SiGe-OI pFETs owing to an optimized thermal budget for the top InGaAs nFETs. From the RF characterizations performed (post-3D monolithic process) on multifinger-gate InGaAs-OI nFETs, we extract a cut-off frequency (Ft) of 16.4 GHz at a gate-length (Lg) of 120 nm. Measurements on various gate lengths shows increasing cut-off frequency with decreasing gate-length.

  1. Monolithic integrated system with an electrowetting-on-dielectric actuator and a film-bulk-acoustic-resonator sensor

    Science.gov (United States)

    Zhang, Menglun; Cui, Weiwei; Chen, Xuejiao; Wang, Chao; Pang, Wei; Duan, Xuexin; Zhang, Daihua; Zhang, Hao

    2015-02-01

    Although digital microfluidics has shown great potential in a wide range of applications, a lab-on-a-chip with integrated digital droplet actuators and powerful biochemical sensors is still lacking. To address the demand, a fully integrated chip with electrowetting-on-dielectric (EWOD) and a film bulk acoustic resonator (FBAR) sensor is introduced, where an EWOD actuator manipulates digital droplets and the FBAR sensor detects the presence of substances in the droplets, respectively. The piezoelectric layer of the FBAR sensor and the dielectric layer of the EWOD share the same aluminum nitride (AlN) thin film, which is a key factor to achieve the full integration of the two completely different devices. The liquid droplets are reliably managed by the EWOD actuator to sit on or move off the FBAR sensor precisely. Sessile drop experiments and limit of detection (LOD) experiments are carried out to characterize the EWOD actuator and the FBAR sensor, respectively. Taking advantage of the digital droplet operation, a ‘dry sensing mode’ of the FBAR sensor in the lab-on-a-chip microsystem is proposed, which has a much higher signal to noise ratio than the conventional ‘wet sensing mode’. Hg2+ droplets with various concentrations are transported and sensed to demonstrate the capability of the integrated system. The EWOD-FBAR chip is expected to play an important role in many complex lab-on-a-chip applications.

  2. Performance analysis of an integrated scheme in optical burst switching high-speed networks

    Institute of Scientific and Technical Information of China (English)

    Amit Kumar Garg; R. S. Kaler

    2008-01-01

    @@ A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the overall burst loss in the network and at the same time to avoid the packet out-of-sequence arrival problem. Simulations are carried out to assess the feasibility of the proposed scheme. Its performance is compared with that of contention resolution schemes based on conventional routing. Through extensive simulations, it is shown that the proposed scheme not only provides significantly better burst loss performance than the basic equal proportion and hop-length based traffic routing algorithms, but also is void of any packet re-orderings.

  3. Radiation effects in power converters: Design of a radiation hardened integrated switching DC/DC converter

    Science.gov (United States)

    Adell, Philippe

    When electronic devices are used in space and military systems, they may be exposed to various types of radiation, including photons, electrons, protons, neutrons, and heavy ions. The effects of radiation on the semiconductor devices within the systems range from gradual degradation to catastrophic failure. In order to design and produce reliable systems for space or military applications, it is necessary to understand the device-level effects of radiation and develop appropriate strategies for reducing system susceptibility. This research focuses on understanding radiation effects in power converters for space and military applications. We show that power converters are very sensitive to radiation (total-dose, single event effects and displacement damage) and that their radiation response is dependent on input bias conditions and load conditions. We compared the radiation hardness of various power converter topologies using experiments and simulations. Evaluation of these designs under different modes of operation is demonstrated to be critical for determining radiation hardness. We emphasize the correlation between radiation effects and the role of the dynamic response of these topologies. For instance, total dose exposure has been found to degrade loop gain and affect regulation in some converters. We propose several radiation-hardening solutions to improve the radiation response of these designs. For instance, we demonstrate the design of a digitally controlled boost converter suitable for space applications based on an SRAM FPGA. A design hardening solution has been developed and successfully applied through VHDL simulations and experiments to assure the continuous operation of the converter in the presence of SEES (more precisely SEFIs). This research led to the design of a digitally controlled radiation hardened integrated switching buck converter. The proposed design is suitable for micro-satellite applications and is based on a high-voltage/CMOS process

  4. Moving Beyond 3D Hetero-Integration and Towards Monolithic Integration of Phase-Change RF Switches with SiGe BiCMOS

    Science.gov (United States)

    2016-03-31

    remaining features on the chiplet (transmission lines, bumps , alignment structures) serve only the purpose of ensuring mechanical and electrical...that is present on all CMOS device wafers poses a challenge to PCS device operation by slowing down the quench time and potentially preventing the...present on CMOS wafers places this trajectory at the edge of the boundary, potentially making it inoperable. Inoperability due to insufficient quench has

  5. Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser.

    Science.gov (United States)

    Moskalenko, Valentina; Latkowski, Sylwester; Tahvili, Saeed; de Vries, Tjibbe; Smit, Meint; Bente, Erwin

    2014-11-17

    In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

  6. Robotic Tactile Sensors Fabricated from a Monolithic Silicon Integrated Circuit and a Piezoelectric Polyvinylidene Fluoride Thin Film

    Science.gov (United States)

    1991-12-01

    quartz crystals has been in the communications industry , where the crystals were used in very selective band-pass filters in lbroad-bland carrier...PVDF on .Silicon Integrated Circuit."* Sensors and A4ctuators, 27:. 167-172 (191). 86. Park, 1K. and others. "’A PVDF Tactile Sensor for Industrial ...G. E. Neville. -Jr. "The Induced Vibration Touch Sensor - A New Dynamic Touch Sensing Systemn," Robotica , 4: 27-31 (1986). 88. Paul. C. R. and S. A

  7. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    Science.gov (United States)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-10-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W-1. The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S21) is below 0.4 dB from 0 to 40 GHz and the return loss (S11) is less than -20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S21 shifting caused by the packaging structure is below 0.5 dB, and S11 is less than -10 dB from 8 GHz to 14 GHz.

  8. 单片集成微波/射频功率放大器技术进展%Progress in Monolithic Integrated Microwave/RF Power Amplifier

    Institute of Scientific and Technical Information of China (English)

    李强; 严利人; 周卫; 张伟

    2011-01-01

    As wireless communication market increases, monolithic integrated microwave/RF power amplifier (MMIC PA) plays a more and more important role in 3G and/or 4G systems. Traditional circuits used in mono-stage amplifiers are reviewed, together with their pros and cons. Architectures, such as the Doherty circuitry, EER (Envelope Elimination and Restoration) technology, LINC, etc. , are also discussed. Generally, these technologies may be used to improve linearity and efficiency of microwave power amplifier. Currently, some system-level linearization techniques have also been utilized. The overview may serve as a useful groundwork for those who are designing MMIC Pas.%回顾了一些用于微波单级功率放大器的传统技术方案,讨论了各自的优缺点.从电路模块的角度,总结了若干兼顾功放线性度和效率指标的典型电路拓扑形式,包括Doherty电路、包络消除与恢复(EER)技术、LINC技术等,并总结了当前主要采用的基于电路系统层面的微波射频功放线性化方案.在此基础上,列举评点了文献中一些典型功放的电路特点和性能指标,可为设计和制造人员提供有益参考.

  9. Nanosecond monolithic CMOS readout cell

    Science.gov (United States)

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  10. Eigenpolarization theory of monolithic nonplanar ring oscillators

    Science.gov (United States)

    Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.

    1989-01-01

    Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.

  11. Integrated mixed signal control IC for 500-kHz switching frequency buck regulator

    Science.gov (United States)

    Chen, Keng; Zhang, Hong

    2015-12-01

    The main purpose for this work is to study the challenges of designing a digital buck regulator using pipelined analog to digital converter (ADC). Although pipelined ADC can achieve high sampling speed, it will introduce additional phase lag to the buck circuit. Along with the latency brought by processing time of additional digital circuits, as well as the time delay associated with the switching frequency, the closed loop will be unstable; moreover, raw ADC outputs have low signal-to-noise ratio, which usually need back-end calibration. In order to compensate these phase lag and make control loop unconditional stable, as well as boost up signal-to-noise ratio of the ADC block with cost-efficient design, a finite impulse response filter followed by digital proportional-integral-derivative blocks were designed. All these digital function blocks were optimised with processing speed. In the system simulation, it can be found that this controller achieved output regulation within 10% of nominal 5 V output voltage under 1 A/µs load transient condition; moreover, with the soft-start method, there is no turn-on overshooting. The die size of this controller is controlled within 3 mm2 by using 180 nm CMOS technology.

  12. Acid/base switching of the tautomerism and conformation of a dioxoporphyrin for integrated binary subtraction.

    Science.gov (United States)

    Ding, Yubin; Li, Xin; Hill, Jonathan P; Ariga, Katsuhiko; Agren, Hans; Andréasson, Joakim; Zhu, Weihong; Tian, He; Xie, Yongshu

    2014-09-26

    Compared with most of the reported logic devices based on the supramolecular approach, systems based on individual molecules can avoid challenging construction requirements. Herein, a novel dioxoporphyrin DPH22 was synthesized and two of its tautomers were characterized by single-crystal X-ray diffraction studies. Compound DPH22 exhibits multichannel controllable stepwise tautomerization, protonation, and deprotonation processes through interactions with H(+) and F(-) ions. By using the addition of H(+) and F(-) ions as inputs and UV/Vis absorption values at λ=412, 510, 562, and 603 nm as outputs, the controlled tautomerism of DPH22 has been successfully used for the construction of an integrated molecular level half-subtractor and comparator. In addition, this acid/base-switched tautomerism is reversible, thus endowing the system with ease of reset and recycling; consequently, there is no need to modulate complicated intermolecular interactions and electron-/charge-transfer processes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Monolithically Integrated Micro Flapping Vehicles

    Science.gov (United States)

    2012-08-01

    Mechanical Logic • Memory Mm-Scale Ground Mobility Actuation & Mechanisms Ultrasonic Motors Reversible Adhesion Platform Design...MEMS Mm-Scale Ground Mobility PiezoMEMS Haltere Actuation & Mechanisms Ultrasonic Motors Reversible Adhesion Platform Design Flapping

  14. Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

    Science.gov (United States)

    Hussein, Ali Abdulsattar

    This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

  15. Design of a Low-Voltage High-Speed Switched-Capacitor Filters Using Improved Auto Zeroed Integrator

    Science.gov (United States)

    Rashtian, M.; Hashemipour, O.; Navi, K.

    The low-voltage high-speed auto zeroed integrator characteristics is improved by applying current steering mechanism in the opamp structure of the integrators and utilizing the non-linear properties of switches. The proposed design results in considerable reduction of power dissipation. Based on this improvement a band-pass filter with centre frequency of 1 MHz and clock frequency of 6 MHz is designed. Furthermore a new circuit for implementation of an auto-zero low-pass filter is presented. Based on this configuration a fourth order low-pass switched capacitor filter with cut off frequency of 600 KHz and clock frequency of 6 MHz is presented. The proposed circuits are simulated using HSPICE and 0.25 μm CMOS technology at 1.5 V supply voltage.

  16. Examination of processes of heat exchange in collector thermosyphons of switching boards high degree of integration.

    Directory of Open Access Journals (Sweden)

    Nikolaenko Yu. Е.

    2007-12-01

    Full Text Available The article presents the research of heat exchange and hydrodynamics of the heat transfer medium in the channels of the collector thermosyphon built into the heat load switching board. The most rational geometry of evaporation channels is chosen. Experimentally obtained dependences of the temperature of switching boards surface on the power of supplied heat flow are given. It is shown that the insertion of collector thermosiphons based on slot channels into the switching board can halve the temperature of the heat-supply zone.

  17. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

    Science.gov (United States)

    Yonghe, Chen; Xuefeng, Zheng; Jincheng, Zhang; Xiaohua, Ma; Yue, Hao

    2016-05-01

    A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of -6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of -0.5 and -5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit. Project supported by the National Natural Science Foundation of China (No. 61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201206), and the Program for New Century Excellent Talents in University (No. NCET-12-0915).

  18. Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes

    Science.gov (United States)

    Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

    2014-01-01

    Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561

  19. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  20. Monolithic integration of an InGaAsP InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhou, F.; Wang, B. J.; Wang, L. F.; Wang, W.

    2005-06-01

    The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG method is performed. A large band-gap photoluminescence wavelength shift of 88 nm was obtained with a small mask width variation (0-30 µm). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 µm and EAM length of 150 µm has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

  1. Embedded-monolith armor

    Science.gov (United States)

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  2. An I-integral method for crack-tip intensity factor variation due to domain switching in ferroelectric single-crystals

    Science.gov (United States)

    Yu, Hongjun; Wang, Jie; Shimada, Takahiro; Wu, Huaping; Wu, Linzhi; Kuna, Meinhard; Kitamura, Takayuki

    2016-09-01

    In the present study, an I-integral method is established for solving the crack-tip intensity factors of ferroelectric single-crystals. The I-integral combined with the phase field model is successfully used to investigate crack-tip intensity factor variations due to domain switching in ferroelectricity subjected to electromechanical loadings, which exhibits several advantages over previous methods based on small-scale switching. First, the shape of the switching zone around a crack tip is predicted by the time-dependent Ginzburg-Landau equation, which does not require preset energy-based switching criterion. Second, the I-integral can directly solve the crack-tip intensity factors and decouple the crack-tip intensity factors of different modes based on superimposing an auxiliary state onto an actual state. Third, the I-integral is area-independent, namely, the I-integral is not affected by the integral area size, the polarization distributions, or domain walls. This makes the I-integral applicable to large-scale domain switching. To this end, the electro-elastic field intensity factors of an impermeable crack in PbTiO3 ferroelectric single crystals are evaluated under electrical, mechanical, and combined loading. The intensity factors obtained by the I-integral agree well with those obtained by the extrapolation technique. From numerical results, the following conclusions can be drawn with respect to fracture behavior of ferroelectrics under large-scale switching. Under displacement controlled mechanical loading, the stress intensity factors (SIFs) decrease monotonically due to the domain switching process, which means a crack tip shielding or effective switching-induced toughening occurs. If an external electric field is applied, the electric displacement intensity factor (EDIF) increases in all cases, i.e., the formed domain patterns enhance the electric crack tip loading. The energy release rate, expressed by the crack-tip J-integral, is reduced by the domain

  3. Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of-art and perspectives

    Science.gov (United States)

    Sarafis, Panagiotis; Nassiopoulou, Androula G.

    2017-09-01

    The increasing need for miniaturization, reliability, and cost efficiency in modern telecommunications has boosted the idea of system-on-chip integration, incorporating the RF front-end circuitry and the passive elements such as RF transmission lines, inductors, antennas, and filters. However, the performance of the passive elements of these circuits is highly degraded when integrated on standard CMOS Si, due to its low resistivity. Porous silicon (PSi) has emerged as a promising local substrate material for the on-chip monolithic integration of high performance passive RF and mm-wave devices, because it combines high resistivity and low permittivity along with CMOS compatibility. This review paper aims at summarizing the obtained results so far in the above area, including transmission lines, inductors, filters, and miniaturized antennas, monolithically integrated on porous Si in a CMOS-compatible environment. In this respect, we first present the requirements for a low-loss, CMOS-compatible RF substrates and we then argue on how PSi fulfills the set requirements. Then, we present the methods used so far to extract the dielectric properties of PSi, which are necessary inputs for designing RF devices. The performance of different passive RF devices such as coplanar waveguides, inductors, filters, and antennas on the local porous Si substrate is then reviewed and compared with the performance of other state-of-the-art RF passive devices based on different technologies. Finally, we discuss the progress made so far towards the industrialization of PSi local RF substrate technology and the challenges that are currently faced towards this objective.

  4. Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

    Science.gov (United States)

    McGuire, Felicia A.; Cheng, Zhihui; Price, Katherine; Franklin, Aaron D.

    2016-08-01

    There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challenges to such NC-FETs is the variable substrate capacitance exhibited in 3D semiconductor channels (bulk, Fin, or nanowire) that minimizes the extent of sub-60 mV/decade switching. In this work, we demonstrate 2D NC-FETs that combine the NC effect with 2D MoS2 channels to extend the steep switching behavior. Using the ferroelectric polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)), these 2D NC-FETs are fabricated by modification of top-gated 2D FETs through the integrated addition of P(VDF-TrFE) into the gate stack. The impact of including an interfacial metal between the ferroelectric and dielectric is studied and shown to be critical. These 2D NC-FETs exhibit a decrease in subthreshold swing from 113 mV/decade down to 11.7 mV/decade at room temperature with sub-60 mV/decade switching occurring over more than 4 decades of current. The P(VDF-TrFE) proves to be an unstable option for a device technology, yet the superb switching behavior observed herein opens the way for further exploration of nanomaterials for extremely low-voltage NC-FETs.

  5. Evaluation of DC/DC switching power regulation with small-scale integrated inductors for PET/MR

    Energy Technology Data Exchange (ETDEWEB)

    Biagi, Laura [IRCCS Fondazione Stella Maris and Fondazione Imago 7, Calambrone, Pisa (Italy); Bisogni, Maria Giuseppina; Camarlinghi, Niccolo [Department of Physics, University of Pisa and INFN, Pisa (Italy); Costagli, Mauro [IRCCS Fondazione Stella Maris and Fondazione Imago 7, Calambrone, Pisa (Italy); Sportelli, Giancarlo [Department of Physics, University of Pisa and INFN, Pisa (Italy); Tosetti, Michela [IRCCS Fondazione Stella Maris and Fondazione Imago 7, Calambrone, Pisa (Italy); Del Guerra, Alberto; Belcari, Nicola [Department of Physics, University of Pisa and INFN, Pisa (Italy)

    2015-05-18

    We present a feasibility study that has been carried out to determine the best power regulation strategy for the PET front-end electronics of the trimodal PET/MRI/EEG TRIMAGE scanner. Conventional power regulation strategies cannot be applied to PET/MRI because standard switching regulators stop working in presence of a high magnetic field. At the state of the art, linear regulators are used instead. However, linear regulators are inefficient and might not allow to fulfill power and thermal constraints if the electronics becomes more power demanding, such as in the case of FPGA based front-ends. Very recently, a new generation of switching power supplies has been introduced for EMI critical applications where the discrete inductor energy buffer is not allowed. These supplies have very small footprint, need few biasing peripherals and they use on-chip integrated inductors for energy storage. These switching power regulators coupled with an adequate EMI shield could be an achievable power solution for our PET front-end electronics. Test procedures for Enpirion. EN2390QI and the Enpirion. EN6347QI switching power regulators are presented. Measurements have been performed at GE 1.5T MRI scanner with the support of IRCCS Fondazione Stella Maris. All the board have been tested in two different configurations: with and without an additional EMI shield. Performance of these two switching power regulators have been compared with a linear power regulator (Enpirion. EY1501DI). Output voltage, output current and temperature have been measured. The stability of these three main characteristic will be presented in different operation conditions and will be discussed (output voltage vs. temperature, output voltage vs. output current and output current vs. temperature).

  6. MEMS switch integrated radio frequency coils and arrays for magnetic resonance imaging

    Science.gov (United States)

    Bulumulla, S. B.; Park, K. J.; Fiveland, E.; Iannotti, J.; Robb, F.

    2017-02-01

    Surface coils are widely used in magnetic resonance imaging and spectroscopy. While smaller diameter coils produce higher signal to noise ratio (SNR) closer to the coil, imaging larger fields of view or greater distance into the sample requires a larger overall size array or, in the case of a channel count limited system, larger diameter coils. In this work, we consider reconfiguring the geometry of coils and coil arrays such that the same coil or coil array may be used in multiple field of view imaging. A custom designed microelectromechanical systems switch, compatible with magnetic resonance imaging, is used to switch in/out conductive sections and components to reconfigure coils. The switch does not degrade the SNR and can be opened/closed in 10 μ s, leading to rapid reconfiguration. Results from a single coil, configurable between small/large configurations, and a two-coil phased array, configurable between spine/torso modes, are presented.

  7. Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver

    Directory of Open Access Journals (Sweden)

    Mohammad A.S. Bhuiyan

    2016-06-01

    Full Text Available Modern Radio Frequency (RF transceivers cannot be imagined without high-performance (Transmit/Receive T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB and linearity (IIP3 which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.

  8. Monolithic pixel detectors for high energy physics

    CERN Document Server

    Snoeys, W

    2013-01-01

    Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio ( Q / C ). It is shown that monolithic detectors can achieve Q / C for low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining suf fi cient Q / C , collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.

  9. Monolithic MACS micro resonators

    Science.gov (United States)

    Lehmann-Horn, J. A.; Jacquinot, J.-F.; Ginefri, J. C.; Bonhomme, C.; Sakellariou, D.

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1 /√{ P } is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4 mm rotor at 500 MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials.

  10. The MONOLITH prototype

    CERN Document Server

    Ambrosio, M; Bencivenni, G; Candela, A M; Chiarini, A; Chignoli, F; De Deo, M; D'Incecco, M; Gerli, S; Giusti, P; Gómez, F; Gustavino, C; Lindozzi, M; Mannocchi, G; Menghetti, H; Morello, C; Murtas, F; Paoluzzi, G; Pilastrini, R; Redaelli, N G; Santoni, M; Sartorelli, G; Terranova, F; Trinchero, G C

    2000-01-01

    MONOLITH (Massive Observatory for Neutrino Oscillation or LImits on THeir existence) is the project of an experiment to study atmospheric neutrino oscillations with a massive magnetized iron detector. The baseline option is a 34 kt iron detector based on the use of about 50000 m/sup 2/ of the glass Resistive Plate Chambers (glass RPCs) developed at the Laboratori Nazionali del Gran Sasso (LNGS). An 8 ton prototype equipped with 23 m/sup 2/ of glass RPC has been realized and tested at the T7-PS beam at CERN. The energy resolution for pions follows a 68%/ square root (E(GeV))+2% law for orthogonally incident particles, in the energy range between 2 and 10 GeV. The time resolution and the tracking capability of the glass RPC are suitable for the MONOLITH experiment. (7 refs).

  11. Microheater-integrated silicon coupled photonic crystal microcavities for low-power thermo-optic switching over a wide spectrum

    Science.gov (United States)

    Zhang, Xingyu; Chakravarty, Swapnajit; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T.

    2016-03-01

    We design, fabricate and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and antibonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20dB, an on-off switching power of 18.2mW, a therm-optic tuning efficiency of 0.63nm/mW, a rise time of 14.8μsec and a fall time of 18.5μsec. The measured on-chip loss on the transmission band is as low as 1dB.

  12. 10 Gbps Colorless Optical Source in Wavelength-Division Multiplexed Passive Optical Networks for Monolithic Integration of Deep-Ridge Waveguide Electroabsorption Modulator with Planar Buried-Heterostructure Semiconductor Optical Amplifier

    Science.gov (United States)

    Kim, Dong Churl; Kim, Ki Soo; Kim, Hyun-Soo; Choi, Byung-Seok; Kwon, O.-Kyun

    2012-05-01

    For the 10 Gbps colorless optical source in wavelength-division multiplexed passive optical networks (WDM-PONs), we have fabricated a semiconductor optical amplifier-reflective electorabsorption modulator (SOA-REAM) by monolithic integration of deep-ridge waveguide REAM (DRW-REAM) with planar buried-heterostructure (PBH) SOA using a PNP-current blocking layer. The SOA-REAM has a spot-size convertor for easy fiber coupling. Using a butterfly module with an SMA connector, we have packaged the SOA-REAM. At a -10 dBm input power of 1550 nm, the saturation output power is about 6 dBm. At 10.7 Gbps, we can obtain clear eye diagrams, and the power penalty at 10-9 bit-error rate (BER) after 20 km transmission is less than 1 dB over 35 nm.

  13. Advantages of horizontal and vertical integration in process- and switch gear control; Vorteile einer horizontalen und vertikalen Integration in Prozess- und Schaltanlagenautomatisierung

    Energy Technology Data Exchange (ETDEWEB)

    Erning, Peter; Langlotz, Kati [ABB AG, Mannheim (Germany). Div. Energietechnik

    2010-07-01

    Higher operating efficiency in power generation is more and more in the focus. Traditional control systems are frequently confined to the vertical integration of process control. It is quite common to use separate SCADA systems for controlling electrical auxiliary systems. However, there exists an overlap between these domains: major loads though belonging to the process are operated by medium-voltage switch gear. Until now the necessary control interconnections required the installation of costly and inflexible marshalling racks. Integrated operation and diagnostics was difficult to implement. These disadvantages apply accordingly in case of implementation of the entire sub-station via direct wiring. State-of-the-art control systems connect these two worlds in one system by integration of sub-station automation using the open standard IEC 61850 which allows freedom of choice in equipment and full access to all sub-station data. (orig.)

  14. Fast electrical switching of orbital angular momentum modes using ultra-compact integrated vortex emitters.

    Science.gov (United States)

    Strain, Michael J; Cai, Xinlun; Wang, Jianwei; Zhu, Jiangbo; Phillips, David B; Chen, Lifeng; Lopez-Garcia, Martin; O'Brien, Jeremy L; Thompson, Mark G; Sorel, Marc; Yu, Siyuan

    2014-09-17

    The ability to rapidly switch between orbital angular momentum modes of light has important implications for future classical and quantum systems. In general, orbital angular momentum beams are generated using free-space bulk optical components where the fastest reconfiguration of such systems is around a millisecond using spatial light modulators. In this work, an extremely compact optical vortex emitter is demonstrated with the ability to actively tune between different orbital angular momentum modes. The emitter is tuned using a single electrically contacted thermo-optical control, maintaining device simplicity and micron scale footprint. On-off keying and orbital angular momentum mode switching are achieved at rates of 10 μs and 20 μs respectively.

  15. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Hall, R.B.; Rand, J.A.; Cotter, J.E. [AstroPower, Inc., Newark, DE (United States)

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  16. Hybrid silicon-plasmonics: efficient waveguide interfacing for low-loss integrated switching components

    Science.gov (United States)

    Tsilipakos, Odysseas; Pitilakis, Alexandros; Kriezis, Emmanouil E.

    2012-04-01

    We present a thorough numerical investigation of end-fire coupling between dielectric-loaded surface plasmon polariton (DLSPP) and compact rib/wire silicon-on-insulator (SOI) waveguides. Simulations are based on the three-dimensional vector finite element method. The interface geometrical parameters leading to optimum performance, i.e., maximum coupling efficiency or, equivalently, minimum insertion loss (IL), are identified. We show that coupling efficiencies as high as 85 % are possible. In addition, we quantify the fabrication tolerances about the optimum parameter values. In the same context, we assess the effect of a metallic stripe gap and that of a horizontal offset between waveguides on insertion loss. Finally, we demonstrate that by benefiting form the low-loss coupling between the two waveguides, hybrid silicon-plasmonic 2 x 2 thermo-optic switching elements can outperform their all-plasmonic counterparts in terms of IL. Specifically, we examine two hybrid SOI-DLSPP switching elements, namely, a Mach-Zehnder Interferometer (MZI) and a Multi-Mode-Interference (MMI) switch. In particular, in the MZI case the IL improvement compared to the all-plasmonic counterpart is 4.5 dB. Moreover, the proposed hybrid components maintain the high extinction ratio, small footprint, and efficient tuning traits of plasmonic technology.

  17. 双斜率积分ADC中开关电容积分器的设计%Design of switched capacitor integrator used in dual-slope integrator

    Institute of Scientific and Technical Information of China (English)

    张鹏南; 杨庆江; 夏洪洋

    2011-01-01

    Aimed at improving the accuracy of the analog-digital conversion in dual-slope ADCs,this paper introduces a high-performance switched-capacitor integrator to replace the conventional active RC integrator.The operation amplifier in this switched-capacitor integrator is composed of a folded cascade input stage and a Class AB output stage and CMOS switches are utilized to suppress charge injection and clock feed-through effects.The simulation of all the circuit modules by EDA simulation software,depending on SMIC 0.18 μm CMOS process,shows that the operation amplifier is capable of a DC gain of 110.3 dB,a unity gain bandwidth of 5.64 MHz,a phase margin of 79°,an output swing of 0.013 3-3 299 mV,and a slew rate of 7.56 MV/s.The switched-capacitor integrator proves quite suitable for the practical applications in the dual-slope ADCs.%为提高双斜率积分ADC中模拟输入信号转换成数字信号的准确性,设计了一种高性能开关电容积分器以替代传统的RC有源积分器。该开关电容积分器的运算放大器由折叠共源共栅输入级和Class AB输出级组成,开关部分选用CMOS开关,以抑制电荷注入和时钟馈通的影响。在中芯国际0.18μmCMOS工艺下,采用EDA仿真软件对相关模块进行仿真验证,得到运算放大器的直流增益为110.3 dB,单位增益带宽为5.64 MHz,相位裕度达到79°,输出摆幅为0.013 3~3 299 mV,转换速率为7.56 MV/s。结果表明,开关电容积分器完全满足双斜率积分ADC的实际应用。

  18. Applications of monolithic fiber interferometers and actively controlled fibers

    OpenAIRE

    Rugeland, Patrik

    2013-01-01

    The objective of this thesis was to develop applications of monolithic fiber devices and actively controlled fibers. A special twin-core fiber known as a ‘Gemini’ fiber was used to construct equal arm-length fiber interferometers, impervious to temperature and mechanical perturbations. A broadband add/drop multiplexer was constructed by inscribing fiber Bragg gratings in the arms of a Gemini Mach-Zehnder interferometer. A broadband interferometric nanosecond switch was constructed from a micr...

  19. Similar genetic switch systems might integrate the floral inductive pathways in dicots and monocots

    DEFF Research Database (Denmark)

    Andersen, C.H.; Jensen, C.S.; Petersen, K.

    2004-01-01

    A recent paper by Million Tadege et A shows that a SOC1-like gene from rice, OsSOC1, can complement the Arabidopsis soc1 mutant, and that ectopic expression of the Arabidopsis floral repressor FLC in rice delays flowering and up-regulation of OsSOC1 These findings, together with the identificatio...... of the wheat vernalization VRN1 locus as an AP1 homologue, suggest that related genetic switch systems control floral transition in dicots and monocots but that they are based on different MADS-box transcription factors....

  20. Bioaffinity chromatography on monolithic supports

    NARCIS (Netherlands)

    Tetala, K.K.R.; Beek, van T.A.

    2010-01-01

    Affinity chromatography on monolithic supports is a powerful analytical chemical platform because it allows for fast analyses, small sample volumes, strong enrichment of trace biomarkers and applications in microchips. In this review, the recent research using monolithic materials in the field of bi

  1. Bioaffinity chromatography on monolithic supports

    NARCIS (Netherlands)

    Tetala, K.K.R.; Beek, van T.A.

    2010-01-01

    Affinity chromatography on monolithic supports is a powerful analytical chemical platform because it allows for fast analyses, small sample volumes, strong enrichment of trace biomarkers and applications in microchips. In this review, the recent research using monolithic materials in the field of bi

  2. Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May

    2016-04-01

    For the development of a metal-interconnection-free integration scheme for monolithic integration of InGaN/GaN light-emitting diodes (LEDs) and AlGaN/GaN high-electron-mobility transistors (HEMTs), a common buffer to achieve high brightness, low leakage current, and high breakdown in the integrated HEMT-LED device is essential. Different buffer structures have been investigated, and their impacts upon both the LED and HEMT parts of the HEMT-LED device have been analyzed. Results indicated that a GaN/AlN buffer structure is the most ideal to serve as a common buffer platform, offering both the excellent crystalline quality and superior buffer resistivity required by the HEMT-LED device. Growth of the AlN layer was particularly crucial for engineering the dislocation density, surface morphology, as well as resistivity of the buffer layer. Using the optimized GaN/AlN buffer structure, the LED part of the HEMT-LED device was improved, showing greatly enhanced light output power and suppressed reverse leakage current, while the breakdown characteristics of the HEMT part were also improved.

  3. An Integrated Programmable Wide-range PLL for Switching Synchronization in Isolated DC-DC Converters

    Science.gov (United States)

    Fard, Miad

    In this thesis, two Phase-Locked-Loop (PLL) based synchronization schemes are introduced and applied to a bi-directional Dual-Active-Bridge (DAB) dc-dc converter with an input voltage up to 80 V switching in the range of 250 kHz to 1 MHz. The two schemes synchronize gating signals across an isolated boundary without the need for an isolator per transistor. The Power Transformer Sensing (PTS) method utilizes the DAB power transformer to indirectly sense switching on the secondary side of the boundary, while the Digital Isolator Sensing (DIS) method utilizes a miniature transformer for synchronization and communication at up to 100 MHz. The PLL is implemented on-chip, and is used to control an external DAB power-stage. This work will lead to lower cost, high-frequency isolated dc-dc converters needed for a wide variety of emerging low power applications where isolator cost is relatively high and there is a demand for the reduction of parts.

  4. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    Directory of Open Access Journals (Sweden)

    Haiyun Huang

    2015-10-01

    Full Text Available This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  5. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-01-01

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. PMID:26516864

  6. Extended Leach Testing of Simulated LAW Cast Stone Monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Serne, R. Jeffrey [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Westsik, Joseph H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jung, H. B. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wang, Guohui [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-07-09

    This report describes the results from long-term laboratory leach tests performed at Pacific Northwest National Laboratory (PNNL) for Washington River Protection Solutions (WRPS) to evaluate the release of key constituents from monoliths of Cast Stone prepared with four simulated low-activity waste (LAW) liquid waste streams. Specific objectives of the Cast Stone long-term leach tests described in this report focused on four activities: 1. Extending the leaching times for selected ongoing EPA-1315 tests on monoliths made with LAW simulants beyond the conventional 63-day time period up to 609 days reported herein (with some tests continuing that will be documented later) in an effort to evaluate long-term leaching properties of Cast Stone to support future performance assessment activities. 2. Starting new EPA-1315 leach tests on archived Cast Stone monoliths made with four LAW simulants using two leachants (deionized water [DIW] and simulated Hanford Integrated Disposal Facility (IDF) Site vadose zone pore water [VZP]). 3. Evaluating the impacts of varying the iodide loading (starting iodide concentrations) in one LAW simulant (7.8 M Na Hanford Tank Waste Operations Simulator (HTWOS) Average) by manufacturing new Cast Stone monoliths and repeating the EPA-1315 leach tests using DIW and the VZP leachants. 4. Evaluating the impacts of using a non-pertechnetate form of Tc that is present in some Hanford tanks. In this activity one LAW simulant (7.8 M Na HTWOS Average) was spiked with a Tc(I)-tricarbonyl gluconate species and then solidified into Cast Stone monoliths. Cured monoliths were leached using the EPA-1315 leach protocol with DIW and VZP. The leach results for the Tc-Gluconate Cast Stone monoliths were compared to Cast Stone monoliths pertechnetate.

  7. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  8. Porous polymer monolithic col

    Directory of Open Access Journals (Sweden)

    Lydia Terborg

    2015-05-01

    Full Text Available A new approach has been developed for the preparation of mixed-mode stationary phases to separate proteins. The pore surface of monolithic poly(glycidyl methacrylate-co-ethylene dimethacrylate capillary columns was functionalized with thiols and coated with gold nanoparticles. The final mixed mode surface chemistry was formed by attaching, in a single step, alkanethiols, mercaptoalkanoic acids, and their mixtures on the free surface of attached gold nanoparticles. Use of these mixtures allowed fine tuning of the hydrophobic/hydrophilic balance. The amount of attached gold nanoparticles according to thermal gravimetric analysis was 44.8 wt.%. This value together with results of frontal elution enabled calculation of surface coverage with the alkanethiol and mercaptoalkanoic acid ligands. Interestingly, alkanethiols coverage in a range of 4.46–4.51 molecules/nm2 significantly exceeded that of mercaptoalkanoic acids with 2.39–2.45 molecules/nm2. The mixed mode character of these monolithic stationary phases was for the first time demonstrated in the separations of proteins that could be achieved in the same column using gradient elution conditions typical of reverse phase (using gradient of acetonitrile in water and ion exchange chromatographic modes (applying gradient of salt in water, respectively.

  9. W-band monolithic oscillator using InAlAs/InGaAs HEMT

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.; Tutt, M.; Ng, G. I.; Lai, R.

    1990-01-01

    A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.

  10. Boost Converter with Three-State Switching Cell and Integrated Magnetics

    DEFF Research Database (Denmark)

    Klimczak, Pawel; Munk-Nielsen, Stig

    2009-01-01

    Fuel cell systems often require high voltage gain and dc-dc step-up converter is a critical part. Scope of this paper is integration of inductor and transformer on a single core. Usage of integrated magnetics improves utilization of magnetic core and thus size and weight of the converter may...

  11. Ultrafast, low-power, all-optical switching via birefringent phase-matched transverse mode conversion in integrated waveguides.

    Science.gov (United States)

    Hellwig, Tim; Epping, Jörn P; Schnack, Martin; Boller, Klaus-J; Fallnich, Carsten

    2015-07-27

    We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise nonlinear mode switching exceeding efficiencies of 90% at switching energies below 1 nJ.

  12. SIMULATION ANALYSIS ON PROPORTIONAL INTEGRAL AND DERIVATIVE CONTROL OF CLOSED LOOP DC MOTOR DRIVE WITH BIPOLAR VOLTAGE SWITCHING

    Directory of Open Access Journals (Sweden)

    P. Karpagavalli

    2013-01-01

    Full Text Available This study presents the performance of a new four quadrant single phase DC drive closed loop system controlled by proportional integral and derivative controller with Pulse Width Modulation (PWM full bridge DC-DC converter using bipolar voltage switching. The proposed method is found to be more efficient in improving the step response characteristics such as reducing the settling time, rise time, steady state error and maximum overshoot in speed response of the closed loop DC motor drive and also reduced total harmonics distortion in the AC line current when compared to open loop system. The proposed topologies were simulated using MATLAB/Simulink software package and the results were obtained.

  13. Biobased monoliths for adenovirus purification.

    Science.gov (United States)

    Fernandes, Cláudia S M; Gonçalves, Bianca; Sousa, Margarida; Martins, Duarte L; Barroso, Telma; Pina, Ana Sofia; Peixoto, Cristina; Aguiar-Ricardo, Ana; Roque, A Cecília A

    2015-04-01

    Adenoviruses are important platforms for vaccine development and vectors for gene therapy, increasing the demand for high titers of purified viral preparations. Monoliths are macroporous supports regarded as ideal for the purification of macromolecular complexes, including viral particles. Although common monoliths are based on synthetic polymers as methacrylates, we explored the potential of biopolymers processed by clean technologies to produce monoliths for adenovirus purification. Such an approach enables the development of disposable and biodegradable matrices for bioprocessing. A total of 20 monoliths were produced from different biopolymers (chitosan, agarose, and dextran), employing two distinct temperatures during the freezing process (-20 °C and -80 °C). The morphological and physical properties of the structures were thoroughly characterized. The monoliths presenting higher robustness and permeability rates were further analyzed for the nonspecific binding of Adenovirus serotype 5 (Ad5) preparations. The matrices presenting lower nonspecific Ad5 binding were further functionalized with quaternary amine anion-exchange ligand glycidyltrimethylammonium chloride hydrochloride by two distinct methods, and their performance toward Ad5 purification was assessed. The monolith composed of chitosan and poly(vinyl) alcohol (50:50) prepared at -80 °C allowed 100% recovery of Ad5 particles bound to the support. This is the first report of the successful purification of adenovirus using monoliths obtained from biopolymers processed by clean technologies.

  14. Monolithic microchannel heatsink

    Science.gov (United States)

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  15. Emerging integrated nanohybrid drug delivery systems to facilitate the intravenous-to-oral switch in cancer chemotherapy.

    Science.gov (United States)

    Luo, Cong; Sun, Jin; Du, Yuqian; He, Zhonggui

    2014-02-28

    Nanohybrid drug delivery systems have presented lots of characteristic advantages as an efficient strategy to facilitate oral drug delivery. Nonetheless, oral administration of chemotherapy agents by nanoparticulate delivery technology still faces great challenges owing to the multiple biobarriers ranging from poorly physicochemical properties of drugs, to complex gastrointestinal disposition and to presystemic metabolism. This review briefly analyzes a series of biobarriers hindering oral absorption and describes the multiple aspects for facilitating the intravenous-to-oral switch in cancer therapy. Moreover, the developed nanoparticulate drug delivery strategies to overcome the above obstacles are provided, including metabolic enzyme inhibition, enteric-coated nanocarriers, bioadhesive and mucus-penetrating strategies, P-gp inhibition and active targeting. On these foundations, the emerging trends of integrated hybrid nanosystems in response to the present low-efficiency drug delivery of any single approach are summarized, such as mixed polymeric micelles and nanocomposite particulate systems. Finally, the recent advances of high-efficiency hybrid nanoparticles in oral chemotherapy are highlighted, with special attention on integrated approach to design drug delivery nanosystems.

  16. Matrilin-3 switches from anti- to pro-anabolic upon integration to the extracellular matrix.

    Science.gov (United States)

    Vincourt, Jean-Baptiste; Etienne, Stéphanie; Grossin, Laurent; Cottet, Justine; Bantsimba-Malanda, Claudie; Netter, Patrick; Mainard, Didier; Libante, Virginie; Gillet, Pierre; Magdalou, Jacques

    2012-06-01

    The extracellular matrix (ECM) has long been viewed primarily as an organized network of solid-phase ligands for integrin receptors. During degenerative processes, such as osteoarthritis, the ECM undergoes deterioration, resulting in its remodeling and in the release of some of its components. Matrilin-3 (MATN3) is an almost cartilage specific, pericellular protein acting in the assembly of the ECM of chondrocytes. In the past, MATN3 was found required for cartilage homeostasis, but also involved in osteoarthritis-related pro-catabolic functions. Here, to better understand the pathological and physiological functions of MATN3, its concentration as a circulating protein in articular fluids of human osteoarthritic patients was determined and its functions as a recombinant protein produced in human cells were investigated with particular emphasis on the physical state under which it is presented to chondrocytes. MATN3 down-regulated cartilage extracellular matrix (ECM) synthesis and up-regulated catabolism when administered as a soluble protein. When artificially immobilized, however, MATN3 induced chondrocyte adhesion via a α5β1 integrin-dependent mechanism, AKT activation and favored survival and ECM synthesis. Furthermore, MATN3 bound directly to isolated α5β1 integrin in vitro. TGFβ1 stimulation of chondrocytes allowed integration of exogenous MATN3 into their ECM and ECM-integrated MATN3 induced AKT phosphorylation and improved ECM synthesis and accumulation. In conclusion, the integration of MATN3 to the pericellular matrix of chondrocytes critically determines the direction toward which MATN3 regulates cartilage metabolism. These data explain how MATN3 plays either beneficial or detrimental functions in cartilage and highlight the important role played by the physical state of ECM molecules.

  17. Integration of look-ahead multicast and unicast scheduling for input-queued cell switches

    DEFF Research Database (Denmark)

    Yu, Hao; Ruepp, Sarah Renée; Berger, Michael Stübert

    2012-01-01

    -ofline (HOL) blocking problem that the weight-based algorithm (WBA) suffers from. Leveraging the FILter & Merge (FILM) scheme, multicast and unicast traffic are independently scheduled based on their requests. Decisions are integrated following a specific policy. Remainder is looped back to the filtering...... module that filters out the conflicting requests to ensure fairness. Simulation results show that comparing with the scheme using WBA for the multicast scheduling, the scheme proposed in this paper reduces the HOL blocking problem for multicast traffic and provides a significant improvement in terms...

  18. Monolitni katalizatori i reaktori: osnovne značajke, priprava i primjena (Monolith catalysts and reactors: preparation and applications

    Directory of Open Access Journals (Sweden)

    Tomašić, V.

    2004-12-01

    Full Text Available Monolithic (honeycomb catalysts are continuous unitary structures containing many narrow, parallel and usually straight channels (or passages. Catalytically active components are dispersed uniformly over the whole porous ceramic monolith structure (so-called incorporated monolithic catalysts or are in a layer of porous material that is deposited on the walls of channels in the monolith's structure (washcoated monolithic catalysts. The material of the main monolithic construction is not limited to ceramics but includes metals, as well. Monolithic catalysts are commonly used in gas phase catalytic processes, such as treatment of automotive exhaust gases, selective catalytic reduction of nitrogen oxides, catalytic removal of volatile organic compounds from industrial processes, etc. Monoliths continue to be the preferred support for environmental applications due to their high geometric surface area, different design options, low pressure drop, high temperature durability, mechanical strength, ease of orientation in a reactor and effectiveness as a support for a catalytic washcoat. As known, monolithic catalysts belong to the class of the structured catalysts and/or reactors (in some cases the distinction between "catalyst" and "reactor" has vanished. Structured catalysts can greatly intensify chemical processes, resulting in smaller, safer, cleaner and more energy efficient technologies. Monolith reactors can be considered as multifunctional reactors, in which chemical conversion is advantageously integrated with another unit operation, such as separation, heat exchange, a secondary reaction, etc. Finally, structured catalysts and/or reactors appear to be one of the most significant and promising developments in the field of heterogeneous catalysis and chemical engineering of the recent years. This paper gives a description of the background and perspectives for application and development of monolithic materials. Different methods and techniques

  19. Monolithic fuel cell based power source for burst power generation

    Science.gov (United States)

    Fee, D. C.; Blackburn, P. E.; Busch, D. E.; Dees, D. W.; Dusek, J.; Easler, T. E.; Ellingson, W. A.; Flandermeyer, B. K.; Fousek, R. J.; Heiberger, J. J.

    A unique fuel cell coupled with a low power nuclear reactor presents an attractive approach for SDI burst power requirements. The monolithic fuel cell looks attractive for space applications and represents a quantum jump in fuel cell technology. Such a breakthrough in design is the enabling technology for lightweight, low volume power sources for space based pulse power systems. The monolith is unique among fuel cells in being an all solid state device. The capability for miniaturization, inherent in solid state devices, gives the low volume required for space missions. In addition, the solid oxide fuel cell technology employed in the monolith has high temperature reject heat and can be operated in either closed or open cycles. Both these features are attractive for integration into a burst power system.

  20. Monolithic glass block lasercom terminal: hardware proof of concept and test results

    Science.gov (United States)

    Carlson, Robert T.; Drake, Marvin D.; Jaeger, Jerold L.

    1995-04-01

    We summarize a compact lasercom terminal implementation based on a previously described system concept, and report on measurements made on a prototype optical system built on internal MITRE funds. This paper discusses the fabrication and test of an innovative hardware proof-of-concept for an advanced satellite lasercom terminal with a ten-fold size, weight, and production cost reduction over current practice. We have built and tested a proof-of-concept of the optics portion of a full duplex `monolithic glass block' (MGB) lasercom terminal. The complete MGB optical system is only 6' X 4' X 0.5' and weighs less than a pound. A complete terminal which includes a 3 - 4 inch telescope and gimbal could be implemented for as little as 15 - 30 pounds. The optical system test results are reported. Our approach uses emerging technologies and a highly integrated system design, based on representative system requirements for satellite crosslinks. Technology evaluation and system trades led to a novel optics design for a lasercom terminal, based on thin film coatings and half-inch glass cubes. The emerging photonic technologies employed include liquid crystals for solid state switching, automatic gain control, and microradian alignment; multi-layer dielectric films for optical bandpass filters, dichroic separation, and polarization control; semiconductor lasers with microlens optics; and an original design where all the optics are realized in planar thin films incorporated on small glass substrates, nominally one-half inch in size. These glass cubes are permanently bonded together to form a monolithic ensemble. Hence, we have coined this implementation the monolithic glass block (MGB) approach. Fused silica is used throughout for reasons of superb radiation resistance and thermal stability. The thin film filters, switches, and polarizers perform all the necessary functions in collimated light. This approach is feasible because the optical paths have been dramatically reduced to

  1. Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-micron laser

    Science.gov (United States)

    Allovon, Michel; Fouchet, Sylvie; Harmand, Jean-Christophe; Ougazzaden, Abdallah; Rose, Benoit; Gloukhian, Andre; Devaux, Fabrice

    1995-02-01

    We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE (Molecular Beam Epitaxy). It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).

  2. Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.

    Science.gov (United States)

    Han, Un-Bin; Lee, Jang-Sik

    2016-07-01

    A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filling of copper oxide can facilitate fabrication of nanoscale memory devices without using vacuum deposition and etching processes. In addition, all materials and processes are CMOS compatible, and especially, the devices can be fabricated at room temperature. Nanoscale memory devices synthesized on wafers having 250-nm via-holes showed reproducible resistive switching programmable memory characteristics with reasonable endurance and data retention properties. This integration strategy provides a solution to overcome the scaling limit of current memory device fabrication methods.

  3. Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications

    Science.gov (United States)

    Han, Un-Bin; Lee, Jang-Sik

    2016-01-01

    A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filling of copper oxide can facilitate fabrication of nanoscale memory devices without using vacuum deposition and etching processes. In addition, all materials and processes are CMOS compatible, and especially, the devices can be fabricated at room temperature. Nanoscale memory devices synthesized on wafers having 250-nm via-holes showed reproducible resistive switching programmable memory characteristics with reasonable endurance and data retention properties. This integration strategy provides a solution to overcome the scaling limit of current memory device fabrication methods. PMID:27364856

  4. Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications

    Science.gov (United States)

    Han, Un-Bin; Lee, Jang-Sik

    2016-07-01

    A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filling of copper oxide can facilitate fabrication of nanoscale memory devices without using vacuum deposition and etching processes. In addition, all materials and processes are CMOS compatible, and especially, the devices can be fabricated at room temperature. Nanoscale memory devices synthesized on wafers having 250-nm via-holes showed reproducible resistive switching programmable memory characteristics with reasonable endurance and data retention properties. This integration strategy provides a solution to overcome the scaling limit of current memory device fabrication methods.

  5. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  6. Development of a chromosomally integrated metabolite-inducible Leu3p-alpha-IPM "off-on" gene switch.

    Directory of Open Access Journals (Sweden)

    Maria Poulou

    Full Text Available BACKGROUND: Present technology uses mostly chimeric proteins as regulators and hormones or antibiotics as signals to induce spatial and temporal gene expression. METHODOLOGY/PRINCIPAL FINDINGS: Here, we show that a chromosomally integrated yeast 'Leu3p-alpha-IotaRhoMu' system constitutes a ligand-inducible regulatory "off-on" genetic switch with an extensively dynamic action area. We find that Leu3p acts as an active transcriptional repressor in the absence and as an activator in the presence of alpha-isopropylmalate (alpha-IotaRhoMu in primary fibroblasts isolated from double transgenic mouse embryos bearing ubiquitously expressing Leu3p and a Leu3p regulated GFP reporter. In the absence of the branched amino acid biosynthetic pathway in animals, metabolically stable alpha-IPM presents an EC(50 equal to 0.8837 mM and fast "OFF-ON" kinetics (t(50ON = 43 min, t(50OFF = 2.18 h, it enters the cells via passive diffusion, while it is non-toxic to mammalian cells and to fertilized mouse eggs cultured ex vivo. CONCLUSIONS/SIGNIFICANCE: Our results demonstrate that the 'Leu3p-alpha-IotaRhoMu' constitutes a simpler and safer system for inducible gene expression in biomedical applications.

  7. Flexible low-voltage organic integrated circuits with megahertz switching frequencies (Presentation Recording)

    Science.gov (United States)

    Zschieschang, Ute; Takimiya, Kazuo; Zaki, Tarek; Letzkus, Florian; Richter, Harald; Burghartz, Joachim N.; Klauk, Hagen

    2015-09-01

    A process for the fabrication of integrated circuits based on bottom-gate, top-contact organic thin-film transistors (TFTs) with channel lengths as short as 1 µm on flexible plastic substrates has been developed. In this process, all TFT layers (gate electrodes, organic semiconductors, source/drain contacts) are patterned with the help of high-resolution silicon stencil masks, thus eliminating the need for subtractive patterning and avoiding the exposure of the organic semiconductors to potentially harmful organic solvents or resists. The TFTs employ a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs and circuits to operate with voltages of about 3 V. Using the vacuum-deposited small-molecule organic semiconductor 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 DNTT), TFTs with an effective field-effect mobility of 1.2 cm2/Vs, an on/off current ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 nsec per stage at a supply voltage of 3 V have been obtained. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. In addition to flexible ring oscillators, we have also demonstrated a 6-bit digital-to-analog converter (DAC) in a binary-weighted current-steering architecture, based on TFTs with a channel length of 4 µm and fabricated on a glass substrate. This DAC has a supply voltage of 3.3 V, a circuit area of 2.6 × 4.6 mm2, and a maximum sampling rate of 100 kS/s.

  8. Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays.

    Science.gov (United States)

    Marette, Alexis; Poulin, Alexandre; Besse, Nadine; Rosset, Samuel; Briand, Danick; Shea, Herbert

    2017-08-01

    Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Fully Integrated on-Chip Switched DC–DC Converter for Battery-Powered Mixed-Signal SoCs

    Directory of Open Access Journals (Sweden)

    Heungjun Jeon

    2017-01-01

    Full Text Available This paper presents a fully integrated on-chip switched-capacitor (SC DC–DC converter that supports a programmable regulated power supply ranging from 2.6 to 3.2 V out of a 5 V input supply. The proposed 4-to-3 step-down topology utilizes two conventional 2-to-1 step-down topologies; each of them (2-to-1_up and 2-to-1_dw has a different flying capacitance to maximize the load current driving capability while minimizing the bottom-plate capacitance loss. The control circuits use a low power supply provided by a small internal low-drop output (LDO connected to the internal load voltage (VL_dw from the 2-to-1_dw, and low swing level-shifted gate-driving signals are generated using the internal load voltage (VL_dw. Therefore, the proposed implementation reduces control circuit and switching power consumptions. The programmable power supply voltage is regulated by means of a pulse frequency modulation (PFM technique with the compensated two-stage operational transconductance amplifier (OTA and the current-starved voltage controlled oscillator (VCO to maintain high efficiency over a wide range of load currents. The proposed on-chip SC DC–DC converter is designed and simulated using high-voltage 0.35 μm bipolar, complementary metal-oxide-semiconductor (CMOS and DMOS (BCDMOS technology. It achieves a peak efficiency of 74% when delivering an 8 mA load current at a 3.2 V supply voltage level, and it provides a maximum output power of 48 mW (IL = 15 mA at VL_up = 3.2 V at 70.5% efficiency. The proposed on-chip SC voltage regulator shows better efficiency than the ideal linear regulator over a wide range of output power, from 2.6 mW to 48 mW. The 18-phase interleaving technique enables the worst-case output voltage ripple to be less than 5.77% of the load voltage.

  10. Safety analysis of switching between reductive and oxidative conditions in a reaction coupling reverse flow reactor.

    NARCIS (Netherlands)

    van Sint Annaland, M.; Kuipers, J.A.M.; van Swaaij, Willibrordus Petrus Maria

    2001-01-01

    A new reverse flow reactor is developed where endothermic reactants (propane dehydrogenation) and exothermic reactants (fuel combustion) are fed sequentially to a monolithic catalyst, while periodically alternating the inlet and outlet positions. Upon switching from reductive to oxidative conditions

  11. Monolithically Peltier-cooled laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hava, S.; Hunsperger, R.G.; Sequeira, H.B.

    1984-04-01

    A new method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and heat spreading device to the laser, is presented. This cooling both reduces and stabilizes the laser junction temperature to minimize such deleterious effects as wavelength drift due to heating. A unified description of the electrical and thermal properties of a monolithic semiconductor mesa structure is given. Here it is shown that an improvement in thermal characteristics is obtained by depositing a relatively thick metallic layer, and by using this layer as a part of an active Peltier structure. Experimental results reveal a 14-percent increase in emitted power (external quantum efficiency) due to passive heat spreading and a further 8-percent if its Peltier cooler is operated. Fabrication techniques used to obtain devices exhibiting the above performance characteristics are given. 21 references.

  12. The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications

    Science.gov (United States)

    Magdǎu, I.-B.; Liu, X.-H.; Kuroda, M. A.; Shaw, T. M.; Crain, J.; Solomon, P. M.; Newns, D. M.; Martyna, G. J.

    2015-08-01

    The piezoelectronic transduction switch is a device with potential as a post-CMOS transistor due to its predicted multi-GHz, low voltage performance on the VLSI-scale. However, the operating principle of the switch has wider applicability. We use theory and simulation to optimize the device across a wide range of length scales and application spaces and to understand the physics underlying its behavior. We show that the four-terminal VLSI-scale switch can operate at a line voltage of 115 mV while as a low voltage-large area device, ≈200 mV operation at clock speeds of ≈2 GHz can be achieved with a desirable 104 On/Off ratio—ideal for on-board computing in sensors. At yet larger scales, the device is predicted to operate as a fast (≈250 ps) radio frequency (RF) switch exhibiting high cyclability, low On resistance and low Off capacitance, resulting in a robust switch with a RF figure of merit of ≈4 fs. These performance benchmarks cannot be approached with CMOS which has reached fundamental limits. In detail, a combination of finite element modeling and ab initio calculations enables prediction of switching voltages for a given design. A multivariate search method then establishes a set of physics-based design rules, discovering the key factors for each application. The results demonstrate that the piezoelectronic transduction switch can offer fast, low power applications spanning several domains of the information technology infrastructure.

  13. A Monolithically Integrated Silicon Modulator with a 10Gb/s 5Vpp or 5.6Vpp Driver in 0.25µm SiGe:C BiCMOS

    Directory of Open Access Journals (Sweden)

    Bernhard eGoll

    2014-11-01

    Full Text Available This paper presents as a novelty a fully monolithically integrated 10Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS transistors a SiGe BiCMOS process (MOS transistors and fast SiGe bipolar transistors is implemented. The fastest bipolar transistors in the BiCMOS product line used have a transit frequency of 120GHz and a collector-emitter breakdown voltage of 2.2V (IHP SG25H3. The main focus of this paper will be given to the electronic drivers, where two driver variants are implemented in the test chips. Circuit descriptions and simulations, which treat the influences of noise and bond wires, are presented. Measurements at separate test chips for the drivers show that the integrated driver variant one has a low power consumption in the range of 0.66W to 0.68W but a high gain of S21=37dB. From the large signal point of view this driver delivers an inverted as well as a non-inverted output data signal between 0V and 2.5V (5Vpp differential. Driver variant one is supplied with 2.5V and with 3.5V. Bit-error-ratio (BER measurements resulted in a BER better than 10E-12 for voltage differences of the input data stream down to 50mVpp. Driver variant two, which is an adapted version of driver variant one, is supplied with 2.5V and 4.2V, consumes 0.83W to 0.87W, delivers a differential data signal with 5.6Vpp at the output and has a gain of S21=40dB. The chip of the fully integrated modulator occupies an area of 12.3mm^2 due to the photonic components. Measurements with a 240mVpp electrical input data stream and for an optical input wavelength of 1540nm resulted in an extinction ratio of 3.3dB for 1mm long RF phase shifters in each modulator arm driven by driver variant one and a DC tuning voltage of 1.2V. The extinction ratio was 8.4dB at a DC tuning voltage of 7V for a device with 2mm long RF phase shifters and driver

  14. Morphological analysis of GeTe in inline phase change switches

    Science.gov (United States)

    King, Matthew R.; El-Hinnawy, Nabil; Salmon, Mike; Gu, Jitty; Wagner, Brian P.; Jones, Evan B.; Borodulin, Pavel; Howell, Robert S.; Nichols, Doyle T.; Young, Robert M.

    2015-09-01

    Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.

  15. Electromagnetic Field Behavior in Dispersive Isotropic Negative Phase Velocity/Negative Refractive Index Guided Wave Structures Compatible with Millimeter-Wave Monolithic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Clifford M. Krowne

    2007-01-01

    Full Text Available A microstrip configuration has been loaded with a dispersive isotropic left-handed medium (LHM substrate and studied regarding its high frequency millimeter-wave behavior near 100 GHz. This has been accomplished using a full-wave integral-equation anisotropic Green's function code configured to run for isotropy. Never before seen electromagnetic field distributions are produced, unlike anything found in normal media devices, using this ab initio solver. These distributions are made in the cross-sectional dimension, with the field propagating in the perpendicular direction. It is discovered that the LHM distributions are so radically different from ordinary media used as a substrate that completely new electronic devices based upon the new physics become a real possibility. The distinctive dispersion diagram for the dispersive medium, consisting of unit cells with split ring resonator-rod combinations, is provided over the upper millimeter-wave frequency regime.

  16. Catastrophic failure of a monolithic zirconia prosthesis.

    Science.gov (United States)

    Chang, Jae-Seung; Ji, Woon; Choi, Chang-Hoon; Kim, Sunjai

    2015-02-01

    Recently, monolithic zirconia restorations have received attention as an alternative to zirconia veneered with feldspathic porcelain to eliminate chipping failures of veneer ceramics. In this clinical report, a patient with mandibular edentulism received 4 dental implants in the interforaminal area, and a screw-retained monolithic zirconia prosthesis was fabricated. The patient also received a maxillary complete removable dental prosthesis over 4 anterior roots. At the 18-month follow-up, all of the zirconia cylinders were seen to be fractured, and the contacting abutment surfaces had lost structural integrity. The damaged abutments were replaced with new abutments, and a new prosthesis was delivered with a computer-assisted design and computer-assisted manufacturing fabricated titanium framework with denture teeth and denture base resins. At the 6-month recall, the patient did not have any problems. Dental zirconia has excellent physical properties; however, care should be taken to prevent excessive stresses on the zirconia cylinders when a screw-retained zirconia restoration is planned as a definitive prosthesis.

  17. Integration of active optical components

    Science.gov (United States)

    Wipiejewski, Torsten; Akulova, Yuliya A.; Fish, Gregory A.; Schow, Clint L.; Koh, Ping; Karim, Adil; Nakagawa, Shigeru; Dahl, Anders; Kozodoy, Peter; Matson, Alex; Short, Bradley W.; Turner, Chuck M.; Penniman, Steven; Larson, Michael C.; Coldren, Christopher W.; Coldren, Larry A.

    2003-06-01

    Integration of active optical components typically serves five goals: enhanced performance, smaller space, lower power dissipation, higher reliability, and lower cost. We are manufacturing widely tunable laser diodes with an integrated high speed electro absorption modulator for metro and all-optical switching applications. The monolithic integration combines the functions of high power laser light generation, wavelength tuning over the entire C-band, and high speed signal modulation in a single chip. The laser section of the chip contains two sampled grating DBRs with a gain and a phase section between them. The emission wavelength is tuned by current injection into the waveguide layers of the DBR and phase sections. The laser light passes through an integrated optical amplifier before reaching the modulator section on the chip. The amplifier boosts the cw output power of the laser and provides a convenient way of power leveling. The modulator is based on the Franz-Keldysh effect for a wide band of operation. The common waveguide through all sections minimizes optical coupling losses. The packaging of the monolithically integrated chip is much simpler compared to a discrete or hybrid solution using a laser chip, an SOA, and an external modulator. Since only one optical fiber coupling is required, the overall packaging cost of the transmitter module is largely reduced. Error free transmission at 2.5Gbit/s over 200km of standard single mode fiber is obtained with less than 1dB of dispersion penalty.

  18. Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

    Science.gov (United States)

    Siegel, Peter; Schlecht, Erich; Mehdi, Imran; Gill, John; Velebir, James; Tsang, Raymond; Dengler, Robert; Lin, Robert

    2010-01-01

    This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows

  19. Wavelength-tunable duplex integrated light source

    Science.gov (United States)

    Okamoto, Hiroshi; Yasaka, Hiroshi; Oe, Kunishige

    1996-04-01

    A monolithically integrated opto-electronic device is proposed as a fast wavelength-switching light source. This tunable duplex integrated light source comprises two wavelength-tunable distributed Bragg reflector (DBR) laser diodes (LDs), two MQW-electro-absorption optical switches, a Y-shaped waveguide coupler, a MQW-electro-absorption modulator, and two thermal drift compensators (TDCs). The wavelength-switching time of the optical switches was estimated to be 60 ps including a 50-ps rise time for the electrical-pulse generator. The wavelength of a 10-Gbit/s NRZ-modulated optical signal can be switched without bit loss. The function of the TDCs is to keep the device-chip temperature constant. Thermal-transient- induced wavelength drift with a millisecond-order time constant, which has been reported for DBR-LDs, and thermal crosstalk between the tuning regions of the integrated LDs, which causes wavelength fluctuation, are effectively suppressed by thermal-drift-compensation operation using the TDCs.

  20. An evaluation of Access Tier local area network switches.

    Energy Technology Data Exchange (ETDEWEB)

    Eldridge, John M.; Olsberg, Ronald R.

    2004-06-01

    This reports tabulates the Test and Evaluation results of the Access Class Switch tests conducted by members of Department 9336. About 15 switches were reviewed for use in the enterprise network as access tier switches as defined in a three tier architecture. The Access Switch Tier has several functions including: aggregate customer desktop ports, preserve and apply QoS tags, provide switched LAN access, provide VLAN assignment, as well as others. The typical switch size is 48 or less user ports. The evaluation team reviewed network switch evaluation reports from the Tolly Group as well as other sources. We then used these reports as a starting point to identify particular switches for evaluation. In general we reviewed the products of dominant equipment manufacturers. Also, based on architectural design requirements, the majority of the switches tested were of relatively small monolithic unit variety.

  1. In situ Fabrication of Monolithic Copper Azide

    Science.gov (United States)

    Li, Bing; Li, Mingyu; Zeng, Qingxuan; Wu, Xingyu

    2016-04-01

    Fabrication and characterization of monolithic copper azide were performed. The monolithic nanoporous copper (NPC) with interconnected pores and nanoparticles was prepared by decomposition and sintering of the ultrafine copper oxalate. The preferable monolithic NPC can be obtained through decomposition and sintering at 400°C for 30 min. Then, the available monolithic NPC was in situ reacted with the gaseous HN3 for 24 h and the monolithic NPC was transformed into monolithic copper azide. Additionally, the copper particles prepared by electrodeposition were also reacted with the gaseous HN3 under uniform conditions as a comparison. The fabricated monolithic copper azide was characterized by Fourier transform infrared (FTIR), inductively coupled plasma-optical emission spectrometry (ICP-OES), and differential scanning calorimetry (DSC).

  2. Integrated network analysis identifies fight-club nodes as a class of hubs encompassing key putative switch genes that induce major transcriptome reprogramming during grapevine development.

    Science.gov (United States)

    Palumbo, Maria Concetta; Zenoni, Sara; Fasoli, Marianna; Massonnet, Mélanie; Farina, Lorenzo; Castiglione, Filippo; Pezzotti, Mario; Paci, Paola

    2014-12-01

    We developed an approach that integrates different network-based methods to analyze the correlation network arising from large-scale gene expression data. By studying grapevine (Vitis vinifera) and tomato (Solanum lycopersicum) gene expression atlases and a grapevine berry transcriptomic data set during the transition from immature to mature growth, we identified a category named "fight-club hubs" characterized by a marked negative correlation with the expression profiles of neighboring genes in the network. A special subset named "switch genes" was identified, with the additional property of many significant negative correlations outside their own group in the network. Switch genes are involved in multiple processes and include transcription factors that may be considered master regulators of the previously reported transcriptome remodeling that marks the developmental shift from immature to mature growth. All switch genes, expressed at low levels in vegetative/green tissues, showed a significant increase in mature/woody organs, suggesting a potential regulatory role during the developmental transition. Finally, our analysis of tomato gene expression data sets showed that wild-type switch genes are downregulated in ripening-deficient mutants. The identification of known master regulators of tomato fruit maturation suggests our method is suitable for the detection of key regulators of organ development in different fleshy fruit crops.

  3. Fully integrated graphene electronic biosensor for label-free detection of lead (II) ion based on G-quadruplex structure-switching.

    Science.gov (United States)

    Li, Yijun; Wang, Cheng; Zhu, Yibo; Zhou, Xiaohong; Xiang, Yu; He, Miao; Zeng, Siyu

    2017-03-15

    This work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-free detection of lead ions (Pb(2+)) in aqueous-media, which first implements the G-quadruplex structure-switching biosensing principle in graphene nanoelectronics. We experimentally illustrate the biomolecular interplay that G-rich DNA single-strands with one-end confined on graphene surface can specifically interact with Pb(2+) ions and switch into G-quadruplex structures. Since the structure-switching of electrically charged DNA strands can disrupt the charge distribution in the vicinity of graphene surface, the carrier equilibrium in graphene sheet might be altered, and manifested by the conductivity variation of GFET. The experimental data and theoretical analysis show that our devices are capable of the label-free and specific quantification of Pb(2+) with a detection limit down to 163.7ng/L. These results first verify the signaling principle competency of G-quadruplex structure-switching in graphene electronic biosensors. Combining with the advantages of the compact device structure and convenient electrical signal, a label-free GFET biosensor for Pb(2+) monitoring is enabled with promising application potential.

  4. A Mathematical Model for Diffusion-Controlled Monolithic Matrix Coated with outer Membrane System

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A release model for diffusion-controlled monolithic matrix coated with outer membrane system is proposed and solved by using the refined double integral method. The calculated results are in satisfactory agreement with the experimental release data. The present model can be well used to describe the release process for all cd/cs values. In addition, the release effects of the monolithic matrix coated with outer membrane system are discussed theoretically.

  5. Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

    Science.gov (United States)

    Sokolov, V.; Geddes, J.; Contolatis, A.

    A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

  6. A radiation hard bipolar monolithic front-end readout

    CERN Document Server

    Baschirotto, A; Cappelluti, I; Castello, R; Cermesoni, M; Gola, A; Pessina, G; Pistolesi, E; Rancoita, P G; Seidman, A

    1999-01-01

    A fast bipolar monolithic charge sensitive preamplifier (CSP), implemented in the monolithic 2 mu m BiCMOS technology (called HF2CMOS) was designed and built in a quad monolithic chip. Studies of radiation effects in the CSP $9 performance, from non-irradiated and up to neutron irradiation of 5.3*10/sup 14/ n/cm/sup 2/, have confirmed that the use of bipolar npn transistors is suitable for the radiation level of the future LHC collider environment. The CSP $9 presents a new circuit solution for obtaining adequate slew rate performances which results in an integral linearity better than 0.8554330n 5 V at 20 ns of shaping time, regardless of the bias current selected for the CSP. This way $9 the bias current of the CSP can be set for optimizing the power dissipation with respect to series and parallel noise, especially useful when the CSP is put in a radiation environment. A prototype test with a novel monolithic 20 ns $9 time constant RC-CR shaper, capable to sum up four inputs has been also realized, featurin...

  7. Principles of broadband switching and networking

    CERN Document Server

    Liew, Soung C

    2010-01-01

    An authoritative introduction to the roles of switching and transmission in broadband integrated services networks Principles of Broadband Switching and Networking explains the design and analysis of switch architectures suitable for broadband integrated services networks, emphasizing packet-switched interconnection networks with distributed routing algorithms. The text examines the mathematical properties of these networks, rather than specific implementation technologies. Although the pedagogical explanations in this book are in the context of switches, many of the fundamenta

  8. LSST primary/tertiary monolithic mirror

    Science.gov (United States)

    Sebag, J.; Gressler, W.; Liang, M.; Neill, D.; Araujo-Hauck, C.; Andrew, J.; Angeli, G.; Cho, M.; Claver, C.; Daruich, F.; Gessner, C.; Hileman, E.; Krabbendam, V.; Muller, G.; Poczulp, G.; Repp, R.; Wiecha, O.; Xin, B.; Kenagy, K.; Martin, H. M.; Tuell, M. T.; West, S. C.

    2016-08-01

    At the core of the Large Synoptic Survey Telescope (LSST) three-mirror optical design is the primary/tertiary (M1M3) mirror that combines these two large mirrors onto one monolithic substrate. The M1M3 mirror was spin cast and polished at the Steward Observatory Mirror Lab at The University of Arizona (formerly SOML, now the Richard F. Caris Mirror Lab at the University of Arizona (RFCML)). Final acceptance of the mirror occurred during the year 2015 and the mirror is now in storage while the mirror cell assembly is being fabricated. The M1M3 mirror will be tested at RFCML after integration with its mirror cell before being shipped to Chile.

  9. Plasmonic nanoantennas as integrated coherent perfect absorbers on SOI waveguides for modulators and all-optical switches

    CERN Document Server

    Bruck, Roman

    2013-01-01

    The performance of plasmonic nanoantenna structures on top of SOI wire waveguides as coherent perfect absorbers for modulators and all-optical switches is explored. The absorption, scattering, reflection and transmission spectra of gold and aluminum nanoantenna-loaded waveguides were calculated by means of 3D finite-difference time-domain simulations for single waves propagating along the waveguide, as well as for standing wave scenarios composed from two counterpropagating waves. The investigated configurations showed losses of roughly 1% and extinction ratios greater than 25 dB for modulator and switching applications, as well as plasmon effects such as strong field enhancement and localization in the nanoantenna region. The proposed plasmonic coherent perfect absorbers can be utilized for ultracompact all-optical switches in coherent networks as well as modulators and can find applications in sensing or in increasing nonlinear effects.

  10. Monolithic Fuel Fabrication Process Development

    Energy Technology Data Exchange (ETDEWEB)

    C. R. Clark; N. P. Hallinan; J. F. Jue; D. D. Keiser; J. M. Wight

    2006-05-01

    The pursuit of a high uranium density research reactor fuel plate has led to monolithic fuel, which possesses the greatest possible uranium density in the fuel region. Process developments in fabrication development include friction stir welding tool geometry and cooling improvements and a reduction in the length of time required to complete the transient liquid phase bonding process. Annealing effects on the microstructures of the U-10Mo foil and friction stir welded aluminum 6061 cladding are also examined.

  11. Single Atom Plasmonic Switch

    CERN Document Server

    Emboras, Alexandros; Ma, Ping; Haffner, Christian; Luisier, Mathieu; Hafner, Christian; Schimmel, Thomas; Leuthold, Juerg

    2015-01-01

    The atom sets an ultimate scaling limit to Moores law in the electronics industry. And while electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling-similar to electronics-is only limited by the atom. More precisely, we introduce an electrically controlled single atom plasmonic switch. The switch allows for fast and reproducible switching by means of the relocation of an individual or at most - a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ration of 10 dB and operation at room temperature with femtojoule (fJ) power consumption for a single switch operation. This demonstration of a CMOS compatible, integrated quantum device allowing to control photons at the single-atom level opens intriguing perspectives for a fully i...

  12. Pressure drop in CIM disk monolithic columns.

    Science.gov (United States)

    Mihelic, Igor; Nemec, Damjan; Podgornik, Ales; Koloini, Tine

    2005-02-11

    Pressure drop analysis in commercial CIM disk monolithic columns is presented. Experimental measurements of pressure drop are compared to hydrodynamic models usually employed for prediction of pressure drop in packed beds, e.g. free surface model and capillary model applying hydraulic radius concept. However, the comparison between pressure drop in monolith and adequate packed bed give unexpected results. Pressure drop in a CIM disk monolithic column is approximately 50% lower than in an adequate packed bed of spheres having the same hydraulic radius as CIM disk monolith; meaning they both have the same porosity and the same specific surface area. This phenomenon seems to be a consequence of the monolithic porous structure which is quite different in terms of the pore size distribution and parallel pore nonuniformity compared to the one in conventional packed beds. The number of self-similar levels for the CIM monoliths was estimated to be between 1.03 and 2.75.

  13. Graphene-supported metal oxide monolith

    Energy Technology Data Exchange (ETDEWEB)

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  14. Graphene-supported metal oxide monolith

    Science.gov (United States)

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  15. A compact all-optical subcarrier label-swapping system using an integrated EML for 10-Gb/s optical label-switching networks

    OpenAIRE

    Zhu, Zuqing; Pan, Zhong; Yoo, SJB

    2005-01-01

    We propose a compact and simple all-optical subcarrier-multiplexed (SCM) label-swapping system employing an integrated electroabsorption modulation laser and a semiconductor optical amplifier based Mach-Zehnder interferometer wavelength converter. The experiments demonstrated error-free all-optical label swapping for the 155-Mb/s label and 10-Gb/s payload over two optical label-switching network nodes with less than 0.7-dB power penalty on the payload. The majority. of the components in this ...

  16. Monolithic silicon bolometers

    Science.gov (United States)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  17. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-01-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  18. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-05-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  19. Monolithic precolumns as efficient tools for guiding the design of nanoparticulate drug-delivery formulations.

    Science.gov (United States)

    Gatschelhofer, Christina; Prasch, Agnes; Buchmeiser, Michael R; Zimmer, Andreas; Wernig, Karin; Griesbacher, Martin; Pieber, Thomas R; Sinner, Frank M

    2012-09-01

    The development of nanomedicines for improved diagnosis and treatment of diseases is pushing current analytical methods to their limits. More efficient, quantitative high-throughput screening methods are needed to guide the optimization of promising nanoparticulate drug delivery formulations. In response to this need, we present herein a novel approach using monolithic separation media. The unique porosity of our capillary monolithic precolumns allows the direct injection and online removal of protamine-oligonucleotide nanoparticles ("proticles") without column clogging, thus avoiding the need for time-consuming off-line sample workup. Furthermore, ring-opening metathesis polymerization (ROMP)-derived monoliths show equivalent preconcentration efficiency for the target drug vasoactive intestinal peptide (VIP) as conventional particle-packed precolumns. The performance of the ROMP-derived monolithic precolumns was constant over at least 100 injections of crude proticle-containing and 300 injections of highly acidic samples. Applying a validated LC-MS/MS capillary monolithic column switching method, we demonstrate the rapid determination of both drug load and in vitro drug release kinetics of proticles within the critical first 2 h and investigate the stability of VIP-loaded proticles in aqueous storage medium intended for inhalation therapy.

  20. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  1. Switch wear leveling

    Science.gov (United States)

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  2. Differential Passive Circuit Modelling with Pentapole Impedance Matrices Application to an Integrated Audio Switching Amplifier for Portable Devices

    OpenAIRE

    Mrad, Roberto; Morel, Florent; Pillonnet, Gael; Vollaire, Christian; Labrousse, Denis

    2011-01-01

    International audience; In this paper a novel method to model the passive parts of differential output system is presented. This approach, based on impedance matrices, models conducted EMI and takes into account component non-idealities. It is not only able to deal with common mode but also differential mode and with conversion between the two modes. This method is experimentally applied to the passive output part of an audio differential switching amplifier dedicated to mobile phone applicat...

  3. Emerging roles of microRNAs as molecular switches in the integrated circuit of the cancer cell

    Science.gov (United States)

    Sotiropoulou, Georgia; Pampalakis, Georgios; Lianidou, Evi; Mourelatos, Zissimos

    2009-01-01

    Transformation of normal cells into malignant tumors requires the acquisition of six hallmark traits, e.g., self-sufficiency in growth signals, insensitivity to antigrowth signals and self-renewal, evasion of apoptosis, limitless replication potential, angiogenesis, invasion, and metastasis, which are common to all cancers (Hanahan and Weinberg 2000). These new cellular traits evolve from defects in major regulatory microcircuits that are fundamental for normal homeostasis. The discovery of microRNAs (miRNAs) as a new class of small non-protein-coding RNAs that control gene expression post-transcriptionally by binding to various mRNA targets suggests that these tiny RNA molecules likely act as molecular switches in the extensive regulatory web that involves thousands of transcripts. Most importantly, accumulating evidence suggests that numerous microRNAs are aberrantly expressed in human cancers. In this review, we discuss the emergent roles of microRNAs as switches that function to turn on/off known cellular microcircuits. We outline recent compelling evidence that deregulated microRNA-mediated control of cellular microcircuits cooperates with other well-established regulatory mechanisms to confer the hallmark traits of the cancer cell. Furthermore, these exciting insights into aberrant microRNA control in cancer-associated circuits may be exploited for cancer therapies that will target deregulated miRNA switches. PMID:19561119

  4. Piezoresistive Sensors Development Using Monolithic CMOS MEMS Technology

    Directory of Open Access Journals (Sweden)

    A. Chaehoi

    2011-04-01

    Full Text Available This paper presents the development of a monolithic CMOS-MEMS platform under the iDesign and SemeMEMS projects with the aim of jointly providing an open access “one-stop-shop” design and prototyping facility for integrated CMOS-MEMS. This work addresses the implementation of a 3-axis accelerometer and a pressure sensor using Semefab’s in-house 2-poly 1-metal CMOS process on a 380/4/15 μm SOI wafer; the membrane and the proof mass being micromachined using double-sided Deep Reactive Ion Etching (DRIE. This monolithic approach promises, in high volume production and using low complexity processes, a dramatic cost reduction over hybrid sensors. Furthermore, the embedded signal conditioning and the low-noise level in polysilicon gauges enables high performance to be achieved by implementing dedicated on-chip amplification and filtering circuitry.

  5. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  6. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  7. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  8. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  9. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    Science.gov (United States)

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  10. Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Science.gov (United States)

    Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M; Yu, Edward T; Lee, Jack C

    2014-02-12

    We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

  11. Optical Packet Switching Demostrator

    DEFF Research Database (Denmark)

    Mortensen, Brian Bach; Berger, Michael Stübert

    2002-01-01

    In the IST project DAVID (data and voice integration over DWDM) work is carried out defining possible architectures of future optical packet switched networks. The feasibility of the architecture is to be verified in a demonstration set-up. This article describes the demonstrator set-up and the m......In the IST project DAVID (data and voice integration over DWDM) work is carried out defining possible architectures of future optical packet switched networks. The feasibility of the architecture is to be verified in a demonstration set-up. This article describes the demonstrator set...

  12. Detachable strong cation exchange monolith, integrated with capillary zone electrophoresis and coupled with pH gradient elution, produces improved sensitivity and numbers of peptide identifications during bottom-up analysis of complex proteomes.

    Science.gov (United States)

    Zhang, Zhenbin; Yan, Xiaojing; Sun, Liangliang; Zhu, Guijie; Dovichi, Norman J

    2015-04-21

    A detachable sulfonate-silica hybrid strong cation-exchange monolith was synthesized in a fused silica capillary, and used for solid phase extraction with online pH gradient elution during capillary zone electrophoresis-tandem mass spectrometry (CZE-MS/MS) proteomic analysis. Tryptic digests were prepared in 50 mM formic acid and loaded onto the strong cation-exchange monolith. Fractions were eluted using a series of buffers with lower concentration but higher pH values than the 50 mM formic acid background electrolyte. This combination of elution and background electrolytes results in both sample stacking and formation of a dynamic pH junction and allows use of relatively large elution buffer volumes while maintaining reasonable peak efficiency and resolution. A series of five pH bumps were applied to elute E. coli tryptic peptides from the monolith, followed by analysis using CZE coupled to an LTQ-Orbitrap Velos mass spectrometer; 799 protein groups and 3381 peptides were identified from 50 ng of the digest in a 2.5 h analysis, which approaches the identification rate for this organism that was obtained with an Orbitrap Fusion. We attribute the improved numbers of peptide and protein identifications to the efficient fractionation by the online pH gradient elution, which decreased the complexity of the sample in each elution step and improved the signal intensity of low abundance peptides. We also performed a comparative analysis using a nanoACQUITY UltraPerformance LCH system. Similar numbers of protein and peptide identifications were produced by the two methods. Protein identifications showed significant overlap between the two methods, whereas peptide identifications were complementary.

  13. 100-GHz Phase Switch/Mixer Containing a Slot-Line Transition

    Science.gov (United States)

    Gaier, Todd; Wells, Mary; Dawson, Douglas

    2009-01-01

    A circuit that can function as a phase switch, frequency mixer, or frequency multiplier operates over a broad frequency range in the vicinity of 100 GHz. Among the most notable features of this circuit is a grounded uniplanar transition (in effect, a balun) between a slot line and one of two coplanar waveguides (CPWs). The design of this circuit is well suited to integration of the circuit into a microwave monolithic integrated circuit (MMIC) package. One CPW is located at the input end and one at the output end of the top side of a substrate on which the circuit is fabricated (see Figure 1). The input CPW feeds the input signal to antiparallel flip-chip Schottky diodes connected to the edges of the slot line. Phase switching is effected by the combination of (1) the abrupt transition from the input CPW to the slot line and (2) CPW ground tuning effected by switching of the bias on the diodes. Grounding of the slot metal to the bottom metal gives rise to a frequency cutoff in the slot. This cutoff is valuable for separating different frequency components when the circuit is used as a mixer or multiplier. Proceeding along the slot line toward the output end, one encounters the aforementioned transition, which couples the slot line to the output CPW. Impedance tuning of the transition is accomplished by use of a high-impedance section immediately before the transition.

  14. New switching processes using the integrated protections of power semi-conductors: application to the development of static converters with self-switching process; nouveaux mecanismes de commutation exploitant les protections integrees des semi-conducteurs de puissance: application a la conception de convertisseurs statiques a commutation automatique

    Energy Technology Data Exchange (ETDEWEB)

    Roux, N.

    2004-07-15

    This thesis deals with a new switching process which integrates the semiconductor protection directly in the switching principle, in order to generate new static converters. It consists of a self-controlled transition which proceeds on a non-zero current or voltage level. 2 It can be associated with controlled or naturally switching processes making it possible to go from two to five change of state types of a switching cell. So, new elementary operation rules of a switching cell emerge. Considering the great number of possible switches, a synthesis methodology of cells with a source reversibility, whose switches are identical, is presented making it possible to reveal various solutions, of which two seem particularly interesting: the self-breaking inverter and rectifier cells, both using the self-breaking thyristor-dual. This last is used as study support of the self-breaking principle. Then, the manuscript concentrates on the study of converters, associations of elementary cells, revealing in particular the DC-current transformer and the reversible three-phase self-breaking rectifier. This last had been developed as an industrial prototype. Lastly, starting from the concept of a wind chain, our assembly has been compared with what is presently done as network converters, revealing lesser losses as well as a higher energetic efficiency. (author)

  15. Single-Fiber Bidirectional Optical Data Links with Monolithic Transceiver Chips

    OpenAIRE

    Alexander Kern; Sujoy Paul; Dietmar Wahl; Ahmed Al-Samaneh; Rainer Michalzik

    2012-01-01

    We report the monolithic integration, fabrication, and electrooptical properties of AlGaAs-GaAs-based transceiver (TRx) chips for 850 nm wavelength optical links with data rates of multiple Gbit/s. Using a single butt-coupled multimode fiber (MMF), low-cost bidirectional communication in half- and even full-duplex mode is demonstrated. Two design concepts are presented, based on a vertical-cavity surface-emitting laser (VCSEL) and a monolithically integrated p-doped-intrinsic-n-doped (PIN) or...

  16. Microfluidic devices and methods including porous polymer monoliths

    Science.gov (United States)

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  17. UPDATE ON MECHANICAL ANALYSIS OF MONOLITHIC FUEL PLATES

    Energy Technology Data Exchange (ETDEWEB)

    D. E. Burkes; F. J. Rice; J.-F. Jue; N. P. Hallinan

    2008-03-01

    Results on the relative bond strength of the fuel-clad interface in monolithic fuel plates have been presented at previous RRFM conferences. An understanding of mechanical properties of the fuel, cladding, and fuel / cladding interface has been identified as an important area of investigation and quantification for qualification of monolithic fuel forms. Significant progress has been made in the area of mechanical analysis of the monolithic fuel plates, including mechanical property determination of fuel foils, cladding processed by both hot isostatic pressing and friction bonding, and the fuel-clad composite. In addition, mechanical analysis of fabrication induced residual stress has been initiated, along with a study to address how such stress can be relieved prior to irradiation. Results of destructive examinations and mechanical tests are presented along with analysis and supporting conclusions. A brief discussion of alternative non-destructive evaluation techniques to quantify not only bond quality, but also bond integrity and strength, will also be provided. These are all necessary steps to link out-of-pile observations as a function of fabrication with in-pile behaviours.

  18. Optimal parameters of monolithic high-index contrast grating VCSELs

    Science.gov (United States)

    Marciniak, Magdalena; Gebski, Marcin; Dems, Maciej; Czyszanowski, Tomasz

    2016-04-01

    Monolithic High refractive index Contrast Grating (MHCG) allows several-fold size reduction of epitaxial structure of VCSEL and facilitates VCSEL fabrication in all photonic material systems. MHCGs can be fabricated of material which refractive index is higher than 1.75 without the need of the combination of low and high refractive index materials. MHCGs have a great application potential in optoelectronic devices, especially in phosphide- and nitride-based VCSELs, which suffer from the lack of efficient monolithically integrated DBR mirrors. MHCGs can simplify the construction of VCSELs, reducing their epitaxial design to monolithic wafer with carrier confinement and active region inside and etched stripes on both surfaces in post processing. In this paper we present results of numerical analysis of MHCGs as a high reflective mirrors for broad range of refractive indices that corresponds to plethora of materials typically used in optoelectronics. Our calculations base on a three-dimensional, fully vectorial optical model. We investigate the reflectance of the MHCG mirrors of different design as the function of the refractive index and we show the optimal geometrical parameters of MHCG enabling nearly 100% reflectance and broad reflection stop-band. We show that MHCG can be designed based on most of semiconductors materials and for any incident light wavelength from optical spectrum.

  19. A Ferrite LTCC-Based Monolithic SIW Phased Antenna Array

    KAUST Repository

    Nafe, Ahmed

    2016-11-17

    In this work, we present a novel configuration for realizing monolithic SIW-based phased antenna arrays using Ferrite LTCC technology. Unlike the current common schemes for realizing SIW phased arrays that rely on surface-mount component (p-i-n diodes, etc) for controlling the phase of the individual antenna elements, here the phase is tuned by biasing of the ferrite filling of the SIW. This approach eliminates the need for mounting of any additional RF components and enables seamless monolithic integration of phase shifters and antennas in SIW technology. As a proof of concept, a two-element slotted SIW-based phased array is designed, fabricated and measured. The prototype exhibits a gain of 4.9 dBi at 13.2 GHz and a maximum E-plane beam-scanning of 28 degrees using external windings for biasing the phase shifters. Moreover, the array can achieve a maximum beam-scanning of 19 degrees when biased with small windings that are embedded in the package. This demonstration marks the first time a fully monolithic SIW-based phased array is realized in Ferrite LTCC technology and paves the way for future larger-size implementations.

  20. Optical fiber crossbar switch

    Science.gov (United States)

    Kilcoyne, Michael K.; Beccue, Stephen M.; Brar, Berinder; Robinson, G.; Pedrotti, Kenneth D.; Haber, William A.

    1990-07-01

    Advances in high performance computers and signal processing systems have led to parallel system architectures. The main limitation in achieving the performance expected of these parallel systems has been the realization of an efficient means to interconnect many processors into a effective parallel system. Electronic interconnections have proved cumbersome, costly and ineffective. The Optical Fiber Crossbar Switch (OFCS) is a compact low power, multi-gigahertz bandwidth multi-channel switch which can be used in large scale computer and telecommunication applications. The switch operates in the optical domain using GaAs semiconductor lasers to transmit wideband multiple channel optical data over fiber optic cables. Recently, a 32 X 32 crossbar switching system was completed and demonstrated. Error free performance was obtained at a data bandwidth of 410 MBPS, using a silicon switch IC. The switch can be completely reconfigured in less than 50 nanoseconds under computer control. The fully populated OFCS has the capability to handle 12.8 gigabits per second (GBPS) of data while switching this data over 32 channels without the loss of a single bit during switching. GaAs IC technology has now progressed to the point that 16 X 16 GaAs based crossbar switch Ics are available which have increased the data bandwidth capability to 2.4 GBPS. The present optical interfaces are integrated GaAs transmitter drivers, GaAs lasers, and integrated GaAs optical receivers with data bandwidths exceeding 2.4 GBPS. A system using all Ill-V switching and optoelectronic components is presently under development for both NASA and DoD programs. The overall system is designed to operate at 1.3 GBPS. It is expected that these systems will find wide application in high capacity computing systems based on parallel microprocessor architecture which require high data bandwidth communication between processors. The OFCS will also have application in commercial optical telecommunication systems

  1. A Study of MPLS Hybrid Switch Based on ATM Switch

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    MPLS is the most successful integrating model of IP over ATM. The paper discusses some problems and their possible solutions when MPLS is supported by ATM switch. How to design the hardware, software and network management systems of such a switch device that has only one switching platform and one NMS but two sets of control planes at the same time, ATM and MPLS, is studied in details. The application of such a hybrid switch is presented in the last part of the paper.

  2. Feasibility evaluation of the monolithic braided ablative nozzle

    Science.gov (United States)

    Director, Mark N.; McPherson, Douglass J., Sr.

    1992-02-01

    The feasibility of the monolithic braided ablative nozzle was evaluated as part of an independent research and development (IR&D) program complementary to the National Aeronautics and Space Administration/Marshall Space Flight Center (NASA/MSFC) Low-Cost, High-Reliability Case, Insulation and Nozzle for Large Solid Rocket Motors (LOCCIN) Program. The monolithic braided ablative nozzle is a new concept that utilizes a continuous, ablative, monolithic flame surface that extends from the nozzle entrance, through the throat, to the exit plane. The flame surface is fabricated using a Through-the-Thickness braided carbon-fiber preform, which is impregnated with a phenolic or phenolic-like resin. During operation, the braided-carbon fiber/resin material ablates, leaving the structural backside at temperatures which are sufficiently low to preclude the need for any additional insulative materials. The monolithic braided nozzle derives its potential for low life cycle cost through the use of automated processing, one-component fabrication, low material scrap, low process scrap, inexpensive raw materials, and simplified case attachment. It also has the potential for high reliability because its construction prevents delamination, has no nozzle bondlines or leak paths along the flame surface, is amenable to simplified analysis, and is readily inspectable. In addition, the braided construction has inherent toughness and is damage-tolerant. Two static-firing tests were conducted using subscale, 1.8 - 2.0-inch throat diameter, hardware. Tests were approximately 15 seconds in duration, using a conventional 18 percent aluminum/ammonium perchlorate propellant. The first of these tests evaluated the braided ablative as an integral backside insulator and exit cone; the second test evaluated the monolithic braided ablative as an integral entrance/throat/exit cone nozzle. Both tests met their objectives. Radial ablation rates at the throat were as predicted, approximately 0.017 in

  3. Monolithic Continuous-Flow Bioreactors

    Science.gov (United States)

    Stephanopoulos, Gregory; Kornfield, Julia A.; Voecks, Gerald A.

    1993-01-01

    Monolithic ceramic matrices containing many small flow passages useful as continuous-flow bioreactors. Ceramic matrix containing passages made by extruding and firing suitable ceramic. Pores in matrix provide attachment medium for film of cells and allow free movement of solution. Material one not toxic to micro-organisms grown in reactor. In reactor, liquid nutrients flow over, and liquid reaction products flow from, cell culture immobilized in one set of channels while oxygen flows to, and gaseous reaction products flow from, culture in adjacent set of passages. Cells live on inner surfaces containing flowing nutrient and in pores of walls of passages. Ready access to nutrients and oxygen in channels. They generate continuous high yield characteristic of immobilized cells, without large expenditure of energy otherwise incurred if necessary to pump nutrient solution through dense biomass as in bioreactors of other types.

  4. Anisotropically structured magnetic aerogel monoliths

    Science.gov (United States)

    Heiligtag, Florian J.; Airaghi Leccardi, Marta J. I.; Erdem, Derya; Süess, Martin J.; Niederberger, Markus

    2014-10-01

    Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture.Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture. Electronic supplementary information (ESI) available: Digital photographs of dispersions and gels with different water-to-ethanol ratios; magnetic measurements of an anatase aerogel containing 0.25 mol% Fe3O4 nanoparticles; XRD patterns of the iron oxide and

  5. Monolithic cells for solar fuels.

    Science.gov (United States)

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-07

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  6. Software Switching for Data Acquisition

    CERN Document Server

    CERN. Geneva; Malone, David

    2016-01-01

    In this talk we discuss the feasibility of replacing telecom-class routers with a topology of commodity servers acting as software switches in data acquisition. We extend the popular software switch, Open vSwitch, with a dedicated, throughput-oriented buffering mechanism. We compare the performance under heavy many-to-one congestion to typical Ethernet switches and evaluate the scalability when building larger topologies, exploiting the integration with software-defined networking technologies. Please note that David Malone will speak on behalf of Grzegorz Jereczek.

  7. Dedicated monolithic infrared spectrometer for process monitoring

    Science.gov (United States)

    Chadha, Suneet; Kyle, William; Bolduc, Roy A.; Curtiss, Lawrence E.

    1999-12-01

    Foster-Miller has leveraged its innovations in IR fiber- optic probes and the recent development of a miniature spectrometer to build a novel IR sensor system for process applications. The developed sensor systems is a low-cost alternative to process FTIR and filter based systems. A monolithic wedge-grating optic provides the spectral dispersion with low cost thermopile point or array detectors picking off the diffracted wavelengths from the optic. The integrated optic provides spectral discrimination between 3- 12 micrometers with resolution at 8 cm-1 or better and high overall optical throughput. The device has a fixed cylindrical grating uniquely bonded to the edge of a ZnSe conditioning 'wedge'. The conditioning optic overcomes limitations of concave gratings as it accepts high angle light at the narrow end of the wedge and progressively conditions it to be near normal to the grating. On return, the diffracted wavelengths are concentrated on the discrete or array detector elements by the wedge, providing throughput comparable to that of an FTIR. The miniature spectrometer coupled to flow through liquid cells or multipass gas cells provides significant cost advantage over conventional sampling methodologies. Currently, we are investigating process applications for the petroleum and dairy markets. The sensor system eliminates the cost, complexity, reliability and bandwidth/resolution problems associated with either Fabry Perot or Michelson Interferometer based approaches for low-cost process applications.

  8. Atomic Scale Plasmonic Switch.

    Science.gov (United States)

    Emboras, Alexandros; Niegemann, Jens; Ma, Ping; Haffner, Christian; Pedersen, Andreas; Luisier, Mathieu; Hafner, Christian; Schimmel, Thomas; Leuthold, Juerg

    2016-01-13

    The atom sets an ultimate scaling limit to Moore's law in the electronics industry. While electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling, similar to electronics, is only limited by the atom. More precisely, we introduce an electrically controlled plasmonic switch operating at the atomic scale. The switch allows for fast and reproducible switching by means of the relocation of an individual or, at most, a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ratio of 9.2 dB and operation at room temperature up to MHz with femtojoule (fJ) power consumption for a single switch operation. This demonstration of an integrated quantum device allowing to control photons at the atomic level opens intriguing perspectives for a fully integrated and highly scalable chip platform, a platform where optics, electronics, and memory may be controlled at the single-atom level.

  9. Remote Sensing with Commutable Monolithic Laser and Detector

    Science.gov (United States)

    2016-01-01

    The ubiquitous trend toward miniaturized sensing systems demands novel concepts for compact and versatile spectroscopic tools. Conventional optical sensing setups include a light source, an analyte interaction region, and a separate external detector. We present a compact sensor providing room-temperature operation of monolithic surface-active lasers and detectors integrated on the same chip. The differentiation between emitter and detector is eliminated, which enables mutual commutation. Proof-of-principle gas measurements with a limit of detection below 400 ppm are demonstrated. This concept enables a crucial miniaturization of sensing devices. PMID:27785455

  10. 1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

    2013-01-01

    We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing...... the reflection at the semiconductor #x2013;air interface using an anti-reflective coating (ARC). We demonstrate how the ARC can be integrated in a monolithic structure by oxidizing AlGaAs with high Al-content. The HCG VCSEL has the potential to achieve polarization stable single-mode output with high tuning...

  11. Activated Carbon Fiber Monoliths as Supercapacitor Electrodes

    Directory of Open Access Journals (Sweden)

    Gelines Moreno-Fernandez

    2017-01-01

    Full Text Available Activated carbon fibers (ACF are interesting candidates for electrodes in electrochemical energy storage devices; however, one major drawback for practical application is their low density. In the present work, monoliths were synthesized from two different ACFs, reaching 3 times higher densities than the original ACFs’ apparent densities. The porosity of the monoliths was only slightly decreased with respect to the pristine ACFs, the employed PVDC binder developing additional porosity upon carbonization. The ACF monoliths are essentially microporous and reach BET surface areas of up to 1838 m2 g−1. SEM analysis reveals that the ACFs are well embedded into the monolith structure and that their length was significantly reduced due to the monolith preparation process. The carbonized monoliths were studied as supercapacitor electrodes in two- and three-electrode cells having 2 M H2SO4 as electrolyte. Maximum capacitances of around 200 F g−1 were reached. The results confirm that the capacitance of the bisulfate anions essentially originates from the double layer, while hydronium cations contribute with a mixture of both, double layer capacitance and pseudocapacitance.

  12. Nucleosome switches.

    Science.gov (United States)

    Schwab, David J; Bruinsma, Robijn F; Rudnick, Joseph; Widom, Jonathan

    2008-06-06

    We present a statistical-mechanical model for the positioning of nucleosomes along genomic DNA molecules as a function of the strength of the binding potential and the chemical potential of the nucleosomes. We show that a significant section of the DNA is composed of two-level nucleosome switching regions where the nucleosome distribution undergoes a localized, first-order transition. The location of the nucleosome switches shows a strong correlation with the location of gene-regulation regions.

  13. Highly integrated VO2-based tunable antenna for millimeter-wave applications

    Science.gov (United States)

    Huitema, L.; Crunteanu, A.; Wong, H.; Arnaud, E.

    2017-05-01

    We report the concept of a frequency tunable antenna device operating in the millimeter wave frequency domain. The ability of the antenna to switch between two frequency states is achieved by the monolithic integration of a metal-insulator transition material (vanadium dioxide, VO2). The VO2 material is an insulator at room temperature but can be driven in a high conductivity metallic state when it is electrically activated using a continuous (DC) voltage. The antenna design is based on a slot antenna excited by a microstrip line having a length that can be conveniently varied using a VO2-based switch. Following the high-frequency VO2 material characterization, we present its monolithic integration in the device prototype along with the comparison between the measured and the simulated performances of the agile antenna. Thus, depending on the VO2 material state, the antenna device can be conveniently switched between 33 and 37 GHz operating frequency bands presenting stable radiation patterns with 5.28 dBi and 5.41 dBi maximum gains, respectively.

  14. Integrating mitosis, toxicity, and transgene expression in a telecommunications packet-switched network model of lipoplex-mediated gene delivery.

    Science.gov (United States)

    Martin, Timothy M; Wysocki, Beata J; Beyersdorf, Jared P; Wysocki, Tadeusz A; Pannier, Angela K

    2014-08-01

    Gene delivery systems transport exogenous genetic information to cells or biological systems with the potential to directly alter endogenous gene expression and behavior with applications in functional genomics, tissue engineering, medical devices, and gene therapy. Nonviral systems offer advantages over viral systems because of their low immunogenicity, inexpensive synthesis, and easy modification but suffer from lower transfection levels. The representation of gene transfer using models offers perspective and interpretation of complex cellular mechanisms,including nonviral gene delivery where exact mechanisms are unknown. Here, we introduce a novel telecommunications model of the nonviral gene delivery process in which the delivery of the gene to a cell is synonymous with delivery of a packet of information to a destination computer within a packet-switched computer network. Such a model uses nodes and layers to simplify the complexity of modeling the transfection process and to overcome several challenges of existing models. These challenges include a limited scope and limited time frame, which often does not incorporate biological effects known to affect transfection. The telecommunication model was constructed in MATLAB to model lipoplex delivery of the gene encoding the green fluorescent protein to HeLa cells. Mitosis and toxicity events were included in the model resulting in simulation outputs of nuclear internalization and transfection efficiency that correlated with experimental data. A priori predictions based on model sensitivity analysis suggest that increasing endosomal escape and decreasing lysosomal degradation, protein degradation, and GFP-induced toxicity can improve transfection efficiency by three-fold. Application of the telecommunications model to nonviral gene delivery offers insight into the development of new gene delivery systems with therapeutically relevant transfection levels.

  15. Monolithic Multi-Colour 40 GHz Mode-Locked Laser Array

    OpenAIRE

    Hou, Lianping; Eddie, Iain; Marsh, John

    2016-01-01

    The monolithic integration of four 40 GHz multi-colored mode-locked lasers with a 4×1 MMI, four electroabsorption modulators and an SOA has been demonstrated. The shortest pulse widths are between 2.63 and 2.85 ps.

  16. Long all-active monolithic mode-locked lasers with surface-etched bragg gratings

    OpenAIRE

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2007-01-01

    We have fabricated 4.4-mm-long monolithic InAlGaAsP–InP mode-locked lasers with integrated deeply surface etched distributed Bragg reflector (DBR) mirrors. The lasers produce 3.7-ps transform-limited Gaussian pulses with 10-mW average output power and 250-fs absolute timing jitter. The performance of the DBR lasers is compared to the performance of Fabry–PÉrot mode-locked lasers from the same wafer and to the performance of earlier reported long monolithic DBR mode-locked lasers and is found ...

  17. Long all-active monolithic mode-locked lasers with surface-etched bragg gratings

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2007-01-01

    We have fabricated 4.4-mm-long monolithic InAlGaAsP–InP mode-locked lasers with integrated deeply surface etched distributed Bragg reflector (DBR) mirrors. The lasers produce 3.7-ps transform-limited Gaussian pulses with 10-mW average output power and 250-fs absolute timing jitter. The performance...... of the DBR lasers is compared to the performance of Fabry–PÉrot mode-locked lasers from the same wafer and to the performance of earlier reported long monolithic DBR mode-locked lasers and is found to be better....

  18. SEMICONDUCTOR INTEGRATED CIRCUITS A 12-bit current steering DAC with 2-dimensional gradient-error tolerant switching scheme

    Science.gov (United States)

    Hao, Chen; Liyuan, Liu; Dongmei, Li; Chun, Zhang; Zhihua, Wang

    2010-10-01

    A 12-bit intrinsic accuracy digital-to-analog converter integrated into standard digital 0.18 μm CMOS technology is proposed. It is based on a current steering segmented 6+6 architecture and requires no calibration. By dividing one most significant bit unary source into 16 elements located in 16 separated regions of the array, the linear gradient errors and quadratic errors can be averaged and eliminated effectively. A novel static performance testing method is proposed. The measured differential nonlinearity and integral nonlinearity are 0.42 and 0.39 least significant bit, respectively. For 12-bit resolution, the converter reaches an update rate of 100 MS/s. The chip operates from a single 1.8 V voltage supply, and the core die area is 0.28 mm2.

  19. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  20. Macroporous glass monoliths prepared from powdered niobium phosphate glass by fast sintering

    Energy Technology Data Exchange (ETDEWEB)

    Lacerda Mauricio, Vitor; Alves, Oswaldo Luiz; Odone Mazali, Italo, E-mail: mazali@iqm.unicamp.br

    2011-03-15

    Macroporous monoliths were prepared by very fast sintering (between 3 and 15 min) of niobophosphate glass powders at low temperature (1018 K) using cellulose as a foaming agent. The porous materials were analyzed by thermal analysis, Raman spectroscopy, scanning electron microscopy and powder X-ray diffraction, and further investigated using X-ray microtomography, a non-destructive technique capable of reconstructing three-dimensional models of samples and providing structural measurements. The progression of the porosity of the monoliths depends on the sintering time (3 to 15 min) and the amount (up to 50% in mass) of cellulose used. The macroporous glass monoliths may find application in integrated chemical systems and in filtering processes.

  1. A novel monolithic ultraviolet image sensor based on a standard CMOS process

    Institute of Scientific and Technical Information of China (English)

    Li Guike; Feng Peng; Wu Nanjian

    2011-01-01

    We present a monolithic ultraviolet (UV) image sensor based on a standard CMOS process.A compact UV sensitive device structure is designed as a pixel for the image sensor.This UV image sensor consists ofa CMOS pixel array,high-voltage switches,a readout circuit and a digital control circuit.A 16 × 16 image sensor prototype chip is implemented in a 0.18 μm standard CMOS logic process.The pixel and image sensor were measured.Experimental results demonstrate that the image sensor has a high sensitivity of 0.072 V/(mJ/cm2) and can capture a UV image.It is suitable for large-scale monolithic bio-medical and space applications.

  2. Integrated device architectures for electrochromic devices

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Jonathan Mack; Berland, Brian Spencer

    2015-04-21

    This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

  3. Ultrafast, low-power, all-optical switching via birefringent phase-matched transverse mode conversion in integrated waveguides

    CERN Document Server

    Hellwig, Tim; Schnack, Martin; Boller, Klaus -J; Fallnich, Carsten

    2015-01-01

    We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise ...

  4. Personalized Medicine: how to Switch from the Concept to the Integration into the Clinical Development Plan to Obtain Marketing Authorization.

    Science.gov (United States)

    Becquemont, Laurent; Bordet, Régis; Cellier, Dominic

    2012-01-01

    One of the challenges of the coming years is to personalize medicine in order to provide each patient with an individualized treatment plan. The three objectives of personalized medicine are to refine diagnosis, rationalize treatment and engage patients in a preventive approach. Personalization can be characterized by various descriptors whether related to the field, biology, imaging, type of lesion of the entity to be treated, comorbidity factors, coprescriptions or the environment As part of personalized medicine focused on biological markers including genetics or genomics, the integration of the clinical development plan to obtain marketing authorization may be segmented in 3 stages with a known descriptor identified before clinical development, a known descriptor discovered during clinical development or a known descriptor known after clinical development. For each stage, it is important to clearly define the technical optimization elements, to specify the expectations and objectives, to examine the methodological aspects of each clinical development phase and finally to consider the fast changing regulatory requirements in view of the few registered therapeutics complying with the definition of personalized medicine as well as the significant technological breakthroughs according to the screened and selected biomarkers. These considerations should be integrated in view of the time required for clinical development from early phase to MA, i.e. more than 10 years. Moreover, business models related to the economic environment should be taken into account when deciding whether or not to retain a biomarker allowing the selection of target populations in a general population. © 2012 Société Française de Pharmacologie et de Thérapeutique.

  5. Modified monolithic silica capillary for preconcentration of catecholamines

    Institute of Scientific and Technical Information of China (English)

    Wei Chang; Tusyo-shi Komazu

    2009-01-01

    Preconcentration of catecholamines by the modified monolithic silica in the capillary was investigated in this study. In order to achieve a microchip-based method for determining catecholamines in the saliva, the monolithic silica was fabricated in the capillary and the monolithic silica was chemically modified by on-column reaction with phenylboronate. Different modified methods were compared. The concentration conditions were optimized. This study indicates the applicability of the modified monolithic silica capillary when it was used to concentrate catecholamines.

  6. Modified monolithic silica capillary for preconcentration of catecholamines

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Preconcentration of catecholamines by the modified monolithic silica in the capillary was investigated in this study. In order to achieve a microchip-based method for determining catecholamines in the saliva,the monolithic silica was fabricated in the capillary and the monolithic silica was chemically modified by on-column reaction with phenylboronate. Different modified methods were compared. The concentration conditions were optimized. This study indicates the applicability of the modified monolithic sili...

  7. Fracture resistance of monolithic zirconia molar crowns with reduced thickness

    OpenAIRE

    Nakamura, Keisuke; Harada, A.; Inagaki, R.; Kanno, Taro; Niwano, Y; Milleding, Percy; Ørtengren, Ulf Thore

    2015-01-01

    This is the accepted manuscript version. Published version is available at Acta Odontologica Scandinavica Objectives. The purpose of the present study was to analyze the relationship between fracture load of monolithic zirconia crowns and axial/occlusal thickness, and to evaluate the fracture resistance of monolithic zirconia crowns with reduced thickness in comparison with that of monolithic lithium disilicate crowns with regular thickness. Materials and methods. Monolithic zi...

  8. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  9. 10Gbps monolithic silicon FTTH transceiver for PON

    Science.gov (United States)

    Zhang, J.; Liow, T. Y.; Lo, G. Q.; Kwong, D. L.

    2010-05-01

    We propose a new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU), eliminating the need for an internal laser source in ONU. We adopt dual fiber network configuration. The internal light source in each of the ONUs is eliminated. Instead, an extra seed laser source in the optical line termination (OLT) operates in continuous wave mode to serve the ONUs in the PON as a shared and centralized laser source. λ1 from OLT Tx and λ2 from the seed laser are combined by using a WDM combiner and connected to serve the multiple ONUs through the downstream fibers. The ONUs receive the data in λ1. Meanwhile, the ONUs encode and transmit data in λ2, which are sent back to OLT. The monolithic ONU transceiver contains a wavelength-division-multiplexing (WDM) filter component, a silicon modulator and a Ge photo-detector. The WDM in ONU selectively guides λ1 to the Ge-PD where the data in λ1 are detected and converted to electrical signals, and λ2 to the transmitter where the light is modulated by upstream data. The modulated optical signals in λ2 from ONUs are connected back to OLT through upstream fibers. The monolithic ONU transceiver chip size is only 2mm by 4mm. The crosstalk between the Tx and Rx is measured to be less than -20dB. The transceiver chip is integrated on a SFP+ transceiver board. Both Tx and Rx demonstrated data rate capabilities of up to 10Gbps. By implementing this scheme, the ONU transceiver size can be significantly reduced and the assembly processes will be greatly simplified. The results demonstrate the feasibility of mass manufacturing monolithic silicon ONU transceivers via low cost

  10. Development of a monolithic ferrite memory array

    Science.gov (United States)

    Heckler, C. H., Jr.; Bhiwandker, N. C.

    1972-01-01

    The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

  11. Carbon Fiber Composite Monoliths as Catalyst Supports

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL; Gallego, Nidia C [ORNL; Pickel, Joseph M [ORNL; Blom, Douglas Allen [ORNL; Burchell, Timothy D [ORNL

    2006-01-01

    Carbon fiber composite monoliths are rigid bodies that can be activated to a large surface area, have tunable porosity, and proven performance in gas separation and storage. They are ideal as catalyst supports in applications where a rigid support, with open structure and easy fluid access is desired. We developed a procedure for depositing a dispersed nanoparticulate phase of molybdenum carbide (Mo2C) on carbon composite monoliths in the concentration range of 3 to 15 wt% Mo. The composition and morphology of this phase was characterized using X-ray diffraction and electron microscopy, and a mechanism was suggested for its formation. Molybdenum carbide is known for its catalytic properties that resemble those of platinum group metals, but at a lower cost. The materials obtained are expected to demonstrate catalytic activity in a series of hydrocarbon reactions involving hydrogen transfer. This project demonstrates the potential of carbon fiber composite monoliths as catalyst supports.

  12. Carbon Fiber Composite Monoliths for Catalyst Supports

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL; Gallego, Nidia C [ORNL; Pickel, Joseph M [ORNL; Blom, Douglas Allen [ORNL; Burchell, Timothy D [ORNL

    2006-01-01

    Carbon fiber composite monoliths are rigid bodies that can be activated to a large surface area, have tunable porosity, and proven performance in gas separation and storage. They are ideal as catalyst supports in applications where a rigid support, with open structure and easy fluid access is desired. We developed a procedure for depositing a dispersed nanoparticulate phase of molybdenum carbide (Mo2C) on carbon composite monoliths in the concentration range of 3 to 15 wt% Mo. The composition and morphology of this phase was characterized using X-ray diffraction and electron microscopy, and a mechanism was suggested for its formation. Molybdenum carbide is known for its catalytic properties that resemble those of platinum group metals, but at a lower cost. The materials obtained are expected to demonstrate catalytic activity in a series of hydrocarbon reactions involving hydrogen transfer. This project demonstrates the potential of carbon fiber composite monoliths as catalyst supports.

  13. A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI

    Directory of Open Access Journals (Sweden)

    Matthew Turnquist

    2016-09-01

    Full Text Available The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT. Processors for these IoT applications primarily operate at near-threshold (NT voltages and have multiple power modes. Achieving high conversion efficiency within the DC–DC converter that supplies these processors is critical since energy consumption of the DC–DC/processor system is proportional to the DC–DC converter efficiency. The DC–DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC–DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI. Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter’s large load power range and high efficiency make it an excellent fit for energy-constrained processors.

  14. Dual Layer Monolith ATR of Pyrolysis Oil for Distributed Synthesis Gas Production

    Energy Technology Data Exchange (ETDEWEB)

    Lawal, Adeniyi [Stevens Institute of Technology, Castle Point Hoboken NJ 07030

    2012-09-29

    We have successfully demonstrated a novel reactor technology, based on BASF dual layer monolith catalyst, for miniaturizing the autothermal reforming of pyrolysis oil to syngas, the second and most critical of the three steps for thermochemically converting biomass waste to liquid transportation fuel. The technology was applied to aged as well as fresh samples of pyrolysis oil derived from five different biomass feedstocks, namely switch-grass, sawdust, hardwood/softwood, golden rod and maple. Optimization of process conditions in conjunction with innovative reactor system design enabled the minimization of carbon deposit and control of the H2/CO ratio of the product gas. A comprehensive techno-economic analysis of the integrated process using in part, experimental data from the project, indicates (1) net energy recovery of 49% accounting for all losses and external energy input, (2) weight of diesel oil produced as a percent of the biomass to be ~14%, and (3) for a demonstration size biomass to Fischer-Tropsch liquid plant of ~ 2000 daily barrels of diesel, the price of the diesel produced is ~$3.30 per gallon, ex. tax. However, the extension of catalyst life is critical to the realization of the projected economics. Catalyst deactivation was observed and the modes of deactivation, both reversible and irreversible were identified. An effective catalyst regeneration strategy was successfully demonstrated for reversible catalyst deactivation while a catalyst preservation strategy was proposed for preventing irreversible catalyst deactivation. Future work should therefore be focused on extending the catalyst life, and a successful demonstration of an extended (> 500 on-stream hours) catalyst life would affirm the commercial viability of the process.

  15. Switching antidepressants

    African Journals Online (AJOL)

    by this time.4. Next-step ... and the side-effects are minimal), switching to an alternative antidepressant (if .... the new SSRI initiated immediately at the former therapeutic equivalent dose ... weeks because of the long half-life of its active metabolite, .... interactions with second-generation antidepressants: an update. Clin Ther.

  16. Nanosecond laser switching of surface wettability and epitaxial integration of c-axis ZnO thin films with Si(111) substrates.

    Science.gov (United States)

    Molaei, R; Bayati, M R; Alipour, H M; Estrich, N A; Narayan, J

    2014-01-08

    We have achieved integration of polar ZnO[0001] epitaxial thin films with Si(111) substrates where cubic yttria-stabilized zirconia (c-YSZ) was used as a template on a Si(111) substrate. Using XRD (θ-2θ and φ scans) and HRTEM techniques, the epitaxial relationship between the ZnO and the c-YSZ layers was shown to be [0001]ZnO || [111]YSZ and [21¯1¯0]ZnO || [1¯01](c-YSZ), where the [21¯1¯0] direction lies in the (0001) plane, and the [1¯01] direction lies in the (111) plane. Similar studies on the c-YSZ/Si interface revealed epitaxy as (111)YSZ || (111)Si and in-plane (110)YSZ || (110)Si. HRTEM micrographs revealed atomically sharp and crystallographically continuous interfaces. The ZnO epilayers were subsequently laser annealed by a single pulse of a nanosecond excimer KrF laser. It was shown that the hydrophobic behavior of the pristine sample became hydrophilic after laser treatment. XPS was employed to study the effect of laser treatment on surface stoichiometry of the ZnO epilayers. The results revealed the formation of oxygen vacancies, which are envisaged to control the observed hydrophilic behavior. Our AFM studies showed surface smoothing due to the coupling of the high energy laser beam with the surface. The importance of integration of c-axis ZnO with Si(111) substrates is emphasized using the paradigm of domain matching epitaxy on the c-YSZ[111] buffer platform along with their out-of-plane orientation, which leads to improvement of the performance of the solid-state devices. The observed ultrafast response and switching in photochemical characteristics provide new opportunities for application of ZnO in smart catalysts, sensors, membranes, DNA self-assembly and multifunctional devices.

  17. Increased thermal conductivity monolithic zeolite structures

    Science.gov (United States)

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  18. Characterization of CIM monoliths as enzyme reactors.

    Science.gov (United States)

    Vodopivec, Martina; Podgornik, Ales; Berovic, Marin; Strancar, Ales

    2003-09-25

    The immobilization of the enzymes citrate lyase, malate dehydrogenase, isocitrate dehydrogenase and lactate dehydrogenase to CIM monolithic supports was performed. The long-term stability, reproducibility, and linear response range of the immobilized enzyme reactors were investigated along with the determination of the kinetic behavior of the enzymes immobilized on the CIM monoliths. The Michaelis-Menten constant K(m) and the turnover number k(3) of the immobilized enzymes were found to be flow-unaffected. Furthermore, the K(m) values of the soluble and immobilized enzyme were found to be comparable. Both facts indicate the absence of a diffusional limitation in immobilized CIM enzyme reactors.

  19. GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

    Directory of Open Access Journals (Sweden)

    Roberto Quaglia

    2016-06-01

    Full Text Available Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25 μ m Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide.

  20. Monolithic carbide-derived carbon films for micro-supercapacitors.

    Science.gov (United States)

    Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury

    2010-04-23

    Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.

  1. Sector Switching

    DEFF Research Database (Denmark)

    Newman, Carol; Rand, John; Tarp, Finn

    Much of the literature on industry evolution has found firm dynamics to be an important source of sector-level productivity growth. In this paper, we ask whether the delineation of entry and exit firms matters in assessing the impact of firm turnover. Using detailed firm level data from Vietnam......-level determinants of firm exit and switching, which need to be carefully considered in the search for effective policy...

  2. Sector Switching

    DEFF Research Database (Denmark)

    Newman, Carol; Rand, John; Tarp, Finn

    Much of the literature on industry evolution has found firm dynamics to be an important source of sector-level productivity growth. In this paper, we ask whether the delineation of entry and exit firms matters in assessing the impact of firm turnover. Using detailed firm level data from Vietnam, ......-level determinants of firm exit and switching, which need to be carefully considered in the search for effective policy...

  3. Constant capacitance in nanopores of carbon monoliths.

    Science.gov (United States)

    García-Gómez, Alejandra; Moreno-Fernández, Gelines; Lobato, Belén; Centeno, Teresa A

    2015-06-28

    The results obtained for binder-free electrodes made of carbon monoliths with narrow micropore size distributions confirm that the specific capacitance in the electrolyte (C2H5)4NBF4/acetonitrile does not depend significantly on the micropore size and support the foregoing constant result of 0.094 ± 0.011 F m(-2).

  4. Photonic integration using asymmetric twin-waveguides

    Science.gov (United States)

    Studenkov, Pavel V.

    A novel approach to fabrication of monolithic photonic integrated circuits based on the asymmetric twin- waveguide (ATG) structure is proposed and demonstrated. In contrast to the conventional integration methods relying on semiconductor regrowth, the ATG approach requires only one epitaxy step, while the integrated devices are defined by post-growth patterning. The ATG structure contains two evanescently coupled waveguide layers separated by a cladding layer. The upper layer provides optical gain for the active devices such as lasers and semiconductor optical amplifiers. The transparent lower layer is used to make waveguides and optical interconnects on the chip. Thus the ATG represents a versatile integration platform for cost- effective fabrication of photonic integrated circuits, similar in some respects to the electronic CMOS platform. Light propagation and coupling in the ATG structure are analyzed using the beam propagation method to optimize the layer design. It is shown that the asymmetric refractive index profile eliminates undesirable optical coupling between the waveguide layers. At the interfaces between the active and passive devices, lateral tapers are used to induce vertical coupling of light with a coupling loss of typically integrated devices can be separately optimized to achieve performance close to that of the conventional discrete components. The design of taper couplers is described in detail, and their performance is experimentally verified. Using the ATG approach, several integrated devices were fabricated in the InGaAsP/InP material system for λ = 1.55 μm wavelength operation. Lasers and semiconductor optical amplifiers with integrated waveguides were characterized to test the integration approach. Single-frequency, distributed Bragg reflector (DBR) lasers achieved output power of 11 mW with a 40 dB side-mode suppression ratio. A DBR laser with integrated electroabsorption modulator had a 24 dB extinction ratio between 0V and -2V bias

  5. Large arrays and properties of 3-terminal graphene nanoelectromechanical switches.

    Science.gov (United States)

    Liu, Xinghui; Suk, Ji Won; Boddeti, Narasimha G; Cantley, Lauren; Wang, Luda; Gray, Jason M; Hall, Harris J; Bright, Victor M; Rogers, Charles T; Dunn, Martin L; Ruoff, Rodney S; Bunch, J Scott

    2014-03-12

    Large arrays of 3-terminal nanoelectromechanical graphene switches are fabricated. The switch is designed with a novel geometry that leads to low actuation voltages and improved mechanical integrity, while reducing adhesion forces, which improves the reliability of the switch. A finite element model including non-linear electromechanics is used to simulate the switching behavior and to deduce a scaling relation between the switching voltage and device dimensions.

  6. Integrated optics approach for advanced semiconductor lasers

    Science.gov (United States)

    Suematsu, Yasuharu; Arai, Shigehisa

    1987-11-01

    Recent advances in the field of semiconductor integrated optics are reviewed from the point of view of monolithic integration of semiconductor lasers and other optical components and/or devices. Emphasis is placed on dynamic-single-mode (DSM) lasers, such as DFB and DBR lasers, intended for highly stable single-wavelength light sources for such monolithic integration. The realization of high-performance DSM lasers and the fabrication techniques of monolithically integrated optical devices and circuits are briefly reviewed. A variety of potential applications is discussed.

  7. Optical displacement measurement using a monolithic Michelson interferometer

    Science.gov (United States)

    Hofstetter, Daniel; Zappe, Hans P.

    1997-04-01

    Contactless optical displacement measurement has the potential for a variety of industrial and scientific applications. For highly accurate displacement measurements at distances below 1 m, interferometric methods are preferred over most other methods. This is mainly because of the good resolution and the possibility of doing the measurements in real-time. Furthermore, the use of direct bandgap semiconductor materials also enables the fabrication of a compact interferometer-based device which unites all necessary components, including the light emitter, on a single chip. In this paper, a monolithically integrated optical displacement sensor fabricated in the GaAs/AlGaAs material system is reported. This single chip microsystem is configured as a double Michelson interferometer and comprises a distributed Bragg reflector laser, photodetectors, phase shifters and waveguide couplers. In the course of this paper, we will also briefly discuss possible scientific and industrial applications of such devices.

  8. Nondestructive characterization methods for monolithic solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Ellingson, W.A.

    1993-01-01

    Monolithic solid oxide fuel cells (MSOFCS) represent a potential breakthrough in fuel cell technology, provided that reliable fabrication methods can be developed. Fabrication difficulties arise in several steps of the processing: First is the fabrication of uniform thin (305 {mu}m) single-layer and trilayer green tapes (the trilayer tapes of anode/electrolyte/cathode and anode/interconnect/cathode must have similar coefficients of thermal expansion to sinter uniformly and to have the necessary electrochemical properties); Second is the development of fuel and oxidant channels in which residual stresses are likely to develop in the tapes; Third is the fabrication of a ``complete`` cell for which the bond quality between layers and the quality of the trilayers must be established; and Last, attachment of fuel and oxidant manifolds and verification of seal integrity. Purpose of this report is to assess nondestructive characterization methods that could be developed for application to laboratory, prototype, and full-scale MSOFCs.

  9. Monolithic optofluidic ring resonator lasers created by femtosecond laser nanofabrication.

    Science.gov (United States)

    Chandrahalim, Hengky; Chen, Qiushu; Said, Ali A; Dugan, Mark; Fan, Xudong

    2015-05-21

    We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ mm(-2). Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 10(4), which is limited by both solvent absorption and scattering loss. In particular, a Q-factor resulting from the scattering loss can be as high as 4.2 × 10(4), suggesting the feasibility of using a femtosecond laser to create high quality optical cavities.

  10. Integration of mode-locked diode lasers

    Science.gov (United States)

    Coleman, A. Catrina; Hou, Lianping; Marsh, John H.

    2016-03-01

    Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with advantages over more conventional sources in compactness, robustness, performance stability, power consumption, and cost savings. The use of quantum well intermixing (QWI) to integrate passive sections and surface etched distributed Bragg reflectors (DBR) into monolithic laser cavity will be described. The performance of the devices will be presented.

  11. Superconducting switch pack

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, V.C.; Wollan, J.J.

    1990-07-24

    This patent describes a superconducting switch pack at least one switch element. The switch element including a length of superconductive wire having a switching portion and two lead portions, the switching portion being between the lead portions; means for supporting the switching portion in a plane in a common mold; hardened resin means encapsulating the switching portion in the plane in a solid body; wherein the solid body has an exterior surface which is planar and substantially parallel with and spaced apart from the plane in which the switching portion is positioned. The exterior surface being exposed to the exterior of the switch pack and the resin means filling the space between the exterior surface and the plane of the switching portion so as to provide uninterrupted thermal communication between the plane of the switching portion and the exterior of the switch pack; and a heater element in thermal contact with the switching portion.

  12. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Science.gov (United States)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on

  13. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    Science.gov (United States)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  14. Macroporous Monolithic Polymers: Preparation and Applications

    Directory of Open Access Journals (Sweden)

    Cecilia Inés Alvarez Igarzabal

    2009-12-01

    Full Text Available In the last years, macroporous monolithic materials have been introduced as a new and useful generation of polymers used in different fields. These polymers may be prepared in a simple way from a homogenous mixture into a mold and contain large interconnected pores or channels allowing for high flow rates at moderate pressures. Due to their porous characteristics, they could be used in different processes, such as stationary phases for different types of chromatography, high-throughput bioreactors and in microfluidic chip applications. This review reports the contributions of several groups working in the preparation of different macroporous monoliths and their modification by immobilization of specific ligands on the products for specific purposes.

  15. Update On Monolithic Fuel Fabrication Development

    Energy Technology Data Exchange (ETDEWEB)

    C. R Clark; J. M. Wight; G. C. Knighton; G. A. Moore; J. F. Jue

    2005-11-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Advancements have been made in the production of U-Mo foil including full sized foils. Progress has also been made in the friction stir welding and transient liquid phase bonding fabrication processes resulting in better bonding, more stable processes and the ability to fabricate larger fuel plates.

  16. FLUIDIZED BED STEAM REFORMER MONOLITH FORMATION

    Energy Technology Data Exchange (ETDEWEB)

    Jantzen, C

    2006-12-22

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or ''mineralized'' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydroceramics. All but one of the nine monoliths tested met the <2g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydroceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form.

  17. Pulse width tunable subpicosecond pulse generation from an actively modelocked monolithic MQW laser/MQW electroabsorption modulator

    Science.gov (United States)

    Takada, A.; Sato, K.; Saruwatari, M.; Yamamoto, M.

    1994-05-01

    Actively modelocked pulses are generated from a 1.59 micron MQW laser integrated with an MQW electroabsorption modulator driven at the monolithic cavity frequency. The pulse width is controlled from 39 ps to 0.55 ps by changing the inverse bias voltage applied to the electroabsorption modulator and by linear pulse compression using a fiber.

  18. Application of small-signal modeling and measurement techniques to the stability analysis of an integrated switching-mode power system. [onboard Dynamics Explorer Satellite

    Science.gov (United States)

    Wong, R. C.; Owen, H. A., Jr.; Wilson, T. G.; Rodriguez, G. E.

    1980-01-01

    Small-signal modeling techniques are used in a system stability analysis of a breadboard version of a complete functional electrical power system. The system consists of a regulated switching dc-to-dc converter, a solar-cell-array simulator, a solar-array EMI filter, battery chargers and linear shunt regulators. Loss mechanisms in the converter power stage, including switching-time effects in the semiconductor elements, are incorporated into the modeling procedure to provide an accurate representation of the system without requiring frequency-domain measurements to determine the damping factor. The small-signal system model is validated by the use of special measurement techniques which are adapted to the poor signal-to-noise ratio encountered in switching-mode systems. The complete electrical power system with the solar-array EMI filter is shown to be stable over the intended range of operation.

  19. Application of small-signal modeling and measurement techniques to the stability analysis of an integrated switching-mode power system. [onboard Dynamics Explorer Satellite

    Science.gov (United States)

    Wong, R. C.; Owen, H. A., Jr.; Wilson, T. G.; Rodriguez, G. E.

    1980-01-01

    Small-signal modeling techniques are used in a system stability analysis of a breadboard version of a complete functional electrical power system. The system consists of a regulated switching dc-to-dc converter, a solar-cell-array simulator, a solar-array EMI filter, battery chargers and linear shunt regulators. Loss mechanisms in the converter power stage, including switching-time effects in the semiconductor elements, are incorporated into the modeling procedure to provide an accurate representation of the system without requiring frequency-domain measurements to determine the damping factor. The small-signal system model is validated by the use of special measurement techniques which are adapted to the poor signal-to-noise ratio encountered in switching-mode systems. The complete electrical power system with the solar-array EMI filter is shown to be stable over the intended range of operation.

  20. An overview of monolithic zirconia in dentistry

    Directory of Open Access Journals (Sweden)

    Özlem Malkondu

    2016-07-01

    Full Text Available Zirconia restorations have been used successfully for years in dentistry owing to their biocompatibility and good mechanical properties. Because of their lack of translucency, zirconia cores are generally veneered with porcelain, which makes restorations weaker due to failure of the adhesion between the two materials. In recent years, all-ceramic zirconia restorations have been introduced in the dental sector with the intent to solve this problem. Besides the elimination of chipping, the reduced occlusal space requirement seems to be a clear advantage of monolithic zirconia restorations. However, scientific evidence is needed to recommend this relatively new application for clinical use. This mini-review discusses the current scientific literature on monolithic zirconia restorations. The results of in vitro studies suggested that monolithic zirconia may be the best choice for posterior fixed partial dentures in the presence of high occlusal loads and minimal occlusal restoration space. The results should be supported with much more in vitro and particularly in vivo studies to obtain a final conclusion.

  1. Magnetic switching

    Energy Technology Data Exchange (ETDEWEB)

    Birx, D.; Cook, E.; Hawkins, S.; Poor, S.; Reginato, L.; Schmidt, J.; Smith, M.

    1983-06-01

    The paper discusses the development program in magnetic switching which was aimed at solving the rep-rate and reliability limitations of the ATA spark gaps. The end result has been a prototype physically very similar to the present Advanced Test Accelerator (ATA) pulse power unit but vastly superior in performance. This prototype, which is easily adaptable to the existing systems, has achieved a burst rep-rate of 20 kHz and an output voltage of 500 kV. A one-on-one substitution of the existing pulse power module would result in a 100 MeV accelerator. Furthermore, the high efficiency of the magnetic pulse compression stages has allowed CW operation of the prototype at one kilohertz opening up other applications for the pulse power. Performance and design details will be described.

  2. Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

    Energy Technology Data Exchange (ETDEWEB)

    Varner, R.L.; Blankenship, J.L.; Beene, J.R. [Oak Ridge National Lab., TN (United States); Todd, R.A. [RIS Corp., Oak Ridge, TN (United States)

    1998-02-01

    Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beam Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.

  3. Preparation of imprinted monolithic column under molecular crowding conditions

    Institute of Scientific and Technical Information of China (English)

    Xiao Xia Li; Xin Liu; Li Hong Bai; Hong Quan Duan; Yan Ping Huang; Zhao Sheng Liu

    2011-01-01

    Molecular crowding is a new concept to obtain molecularly imprinted polymers (MIPs) with greater capacity and selectivity. In this work, molecular crowding agent was firstly applied to the preparation of MIPs monolithic column. A new polymerization system based on molecular crowding surrounding was developed to prepare enrofloxacin-imprinted monolith, which was composed of polystyrene and tetrahydrofuran. The result showed that the monolithic MIPs under molecular crowding conditions presented good molecular recognition for enrofloxacin with an imprinting factor of 3.03.

  4. Summaries of Papers Presented at Photonic Switching Topical Meeting Held in Salt Lake City, Utah on 1-3 March 1989. Technical Digest

    Science.gov (United States)

    1990-01-31

    were the monolithic MQW DBR type capable of tuning over a 1,000 GHz range and thus could be positioned in any of the designated channels within their...tuning range. A coherent receiver using: another monolithic MQW DBR tunable laser as the LO was used to recover any of the three transmitted signals. We...4 output beams y y polarisation switching j eams device p.poarised [~j Ions [ln p-polarised polarisationi beam-splitter cube Figure 1. Multiplexed

  5. A high‐isolation switch based on a standard GaAs process

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy

    2011-01-01

    The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of......The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of...

  6. Integrated MMIC for Phase-Locked Oscillators and Frequency Synthesizers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Microwave Monolithic Integrated Circuits (MMIC) provide the technology base for miniaturization of microwave payloads in spacecraft. While MMIC chips are widely...

  7. Comprehensive theory of the Deans' switch as a variable flow splitter: fluid mechanics, mass balance, and system behavior.

    Science.gov (United States)

    Boeker, Peter; Leppert, Jan; Mysliwietz, Bodo; Lammers, Peter Schulze

    2013-10-01

    The Deans' switch is an effluent switching device based on controlling flows of carrier gas instead of mechanical valves in the analytical flow path. This technique offers high inertness and a wear-free operation. Recently new monolithic microfluidic devices have become available. In these devices the whole flow system is integrated into a small metal device with low thermal mass and leak-tight connections. In contrast to a mechanical valve-based system, a flow-controlled system is more difficult to calculate. Usually the Deans' switch is used to switch one inlet to one of two outlets, by means of two auxiliary flows. However, the Deans' switch can also be used to deliver the GC effluent with a specific split ratio to both outlets. The calculation of the split ratio of the inlet flow to the two outlets is challenging because of the asymmetries of the flow resistances. This is especially the case, if one of the outlets is a vacuum device, such as a mass spectrometer, and the other an atmospheric detector, e.g. a flame ionization detector (FID) or an olfactory (sniffing) port. The capillary flows in gas chromatography are calculated with the Hagen-Poiseuille equation of the laminar, isothermal and compressible flow in circular tubes. The flow resistances in the new microfluidic devices have to be calculated with the corresponding equation for rectangular cross-section microchannels. The Hagen-Poiseuille equation underestimates the flow to a vacuum outlet. A corrected equation originating from the theory of rarefied flows is presented. The calculation of pressures and flows of a Deans' switch based chromatographic system is done by the solution of mass balances. A specific challenge is the consideration of the antidiffusion resistor between the two auxiliary gas lines of the Deans' switch. A full solution for the calculation of the Deans' switch including this restrictor is presented. Results from validation measurements are in good accordance with the developed

  8. Inquire into Integration ISOLATE-USER-VLAN on Switch of Computing%计算机网络专业交换机ISOLATE-USER-VLAN集成实验的探讨

    Institute of Scientific and Technical Information of China (English)

    翁国秀

    2015-01-01

    In Network integration experiment of computing, offering experiment of ISOLATE-USER-VLAN integration on multi-grade-connect switch apparently enhances student’s integration capacity, and develops their all-network design capability. This paper inquires into the construction of experiment environment, the ways and process of the experiment, and the teaching effect.%在计算机网络专业网络集成课程实验中,开设多级连交换机上集成ISOLATE-USER-VLAN实验,能明显增强学生集成能力,还能培养学生网络全局统筹设计能力。本文探讨了该集成实验环境建设、实验的方法和过程,以及实验的教学效果。

  9. Improvement of input power dynamic range for 20 Gbit/s optical WDM switch nodes using an integrated Michelson wavelength converter

    DEFF Research Database (Denmark)

    Danielsen, Søren Lykke; Hansen, Peter Bukhave; Jørgensen, Carsten

    1997-01-01

    be improved compared to switch blocks without IWCs. This is especially important at high bit rates where the cascadability of the SOA gates decreases. Here, more than 15 dB improvement of the input power dynamic range is achieved at 20 Gbit/s using a high-speed Michelson interferometer wavelength converter...

  10. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yiren; Song, Hang, E-mail: songh@ciomp.ac.cn, E-mail: lidb@ciomp.ac.cn; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing, E-mail: songh@ciomp.ac.cn, E-mail: lidb@ciomp.ac.cn; Miao, Guoqing [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2014-11-10

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  11. Switched on!

    CERN Multimedia

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  12. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    Science.gov (United States)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  13. Defense Switched Network Technology and Experiments Program.

    Science.gov (United States)

    2014-09-26

    3) development and test of data communication techniques using DoD-standard data protocols in an integrated voice /data network, and (4) EISN system... communication techniques using DoD-standard data protocols in an integrated voice /data network, and (4) EISN system coordination and experiment planning...control voice trunks that use E&M signaling and go from the RCP switch to the PCI or to another RCP switch; (e) A Dual- Tone Multiple-Frequency (DTMF

  14. Switch Using Radio Frequency Identification

    Science.gov (United States)

    Fink, Patrick W. (Inventor); Lin, Gregory Y. (Inventor); Kennedy, Timothy F. (Inventor); Ngo, Phong H. (Inventor)

    2015-01-01

    Disclosed is an apparatus for use as a switch. In one embodiment, the switch comprises at least one RFID tag, each RFID tag comprising an antenna element and an RFID integrated circuit, at least one source element, and at least one lever arm. Each lever arm is connected to one of the RFID tags, and each lever arm is capable of two positions. One of the positions places the lever arm and the RFID tag connected thereto into alignment with the source element. Other embodiments are also described.

  15. Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders

    NARCIS (Netherlands)

    De Kanter, J.L.C.G.

    2006-01-01

    Summary accompanying the thesis: Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders by Jens de Kanter This thesis presents the investigation of the crush behaviour of both monolithic aluminium cylinders and externally fibre reinforced aluminium cylinders. The research is based

  16. Time-based position estimation in monolithic scintillator detectors

    NARCIS (Netherlands)

    Tabacchini, V.; Borghi, G.; Schaart, D.R.

    2015-01-01

    Gamma-ray detectors based on bright monolithic scintillation crystals coupled to pixelated photodetectors are currently being considered for several applications in the medical imaging field. In a typical monolithic detector, both the light intensity and the time of arrival of the earliest

  17. Time-based position estimation in monolithic scintillator detectors

    NARCIS (Netherlands)

    Tabacchini, V.; Borghi, G.; Schaart, D.R.

    2015-01-01

    Gamma-ray detectors based on bright monolithic scintillation crystals coupled to pixelated photodetectors are currently being considered for several applications in the medical imaging field. In a typical monolithic detector, both the light intensity and the time of arrival of the earliest scintilla

  18. Time-based position estimation in monolithic scintillator detectors

    NARCIS (Netherlands)

    Tabacchini, V.; Borghi, G.; Schaart, D.R.

    2015-01-01

    Gamma-ray detectors based on bright monolithic scintillation crystals coupled to pixelated photodetectors are currently being considered for several applications in the medical imaging field. In a typical monolithic detector, both the light intensity and the time of arrival of the earliest scintilla

  19. A Monolithic Perovskite Structure for Use as a Magnetic Regenerator

    DEFF Research Database (Denmark)

    Pryds, Nini; Clemens, Frank; Menon, Mohan

    2011-01-01

    A La0.67Ca0.26Sr0.07Mn1.05O3 (LCSM) perovskite was prepared for the first time as a ceramic monolithic regenerator used in a regenerative magnetic refrigeration device. The parameters influencing the extrusion process and the performance of the regenerator, such as the nature of the monolith paste...

  20. Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders

    NARCIS (Netherlands)

    De Kanter, J.L.C.G.

    2006-01-01

    Summary accompanying the thesis: Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders by Jens de Kanter This thesis presents the investigation of the crush behaviour of both monolithic aluminium cylinders and externally fibre reinforced aluminium cylinders. The research is based

  1. Hydrogel coated monoliths for enzymatic hydrolysis of penicillin G

    NARCIS (Netherlands)

    De Lathouder, K.M.; Smeltink, M.W.; Straathof, A.J.J.; Paasman, M.A.; Van de Sandt, E.J.A.X.; Kapteijn, F.; Moulijn, J.A.

    2008-01-01

    The objective of this work was to develop a hydrogel-coated monolith for the entrapment of penicillin G acylase (E. coli, PGA). After screening of different hydrogels, chitosan was chosen as the carrier material for the preparation of monolithic biocatalysts. This protocol leads to active immobilize

  2. FLUIDIZED BED STEAM REFORMER (FBSR) PRODUCT: MONOLITH FORMATION AND CHARACTERIZATION

    Energy Technology Data Exchange (ETDEWEB)

    Jantzen, C

    2006-09-13

    The most important requirement for Hanford's low activity waste (LAW) form for shallow land disposal is the chemical durability of the product. A secondary, but still essential specification, is the compressive strength of the material with regards to the strength of the material under shallow land disposal conditions, e.g. the weight of soil overburden and potential intrusion by future generations, because the term ''near-surface disposal'' indicates disposal in the uppermost portion, or approximately the top 30 meters, of the earth's surface. The THOR{reg_sign} Treatment Technologies (TTT) mineral waste form for LAW is granular in nature because it is formed by Fluidized Bed Steam Reforming (FBSR). As a granular product it has been shown to be as durable as Hanford's LAW glass during testing with ASTM C-1285-02 known as the Product Consistency Test (PCT) and with the Single Pass Flow Through Test (SPFT). Hanford Envelope A and Envelope C simulants both performed well during PCT and SPFT testing and during subsequent performance assessment modeling. This is partially due to the high aluminosilicate content of the mineral product which provides a natural aluminosilicate buffering mechanism that inhibits leaching and is known to occur in naturally occurring aluminosilicate mineral analogs. In order for the TTT Na-Al-Si (NAS) granular mineral product to meet the compressive strength requirements (ASTM C39) for a Hanford waste form, the granular product needs to be made into a monolith or disposed of in High Integrity Containers (HIC's). Additionally, the Hanford intruder scenario for disposal in the Immobilized Low Activity Waste (ILAW) trench is mitigated as there is reduced intruder exposure when a waste form is in a monolithic form. During the preliminary testing of a monolith binder for TTT's FBSR mineral product, four parameters were monitored: (1) waste loading (not optimized for each waste form tested); (2) density

  3. A new large area monolithic silicon telescope

    CERN Document Server

    Tudisco, S; Cabibbo, M; Cardella, G; De Geronimo, G; Di Pietro, A; Fallica, G; Figuera, P; Musumarra, A; Papa, M; Pappalardo, G S; Rizzo, F; Valvo, G

    1999-01-01

    A new prototype of large area (20x20 mm sup 2) monolithic silicon telescope with an ultrathin DELTA E stage (1 mu m) has been built and tested. A particular mask for the ground electrode has been developed to improve the charge collection reducing the induction between the E and DELTA E stages. A special designed preamplifier has been used for the readout of the signal from the DELTA E stage to overcome the problem of the large input capacitance (40 nF). A rather low energy threshold charge discrimination has been obtained. Small side effects due to the electric field deformation near the ground electrode were observed and quantified.

  4. Monolithic aerogels with nanoporous crystalline phases

    Science.gov (United States)

    Daniel, Christophe; Guerra, Gaetano

    2015-05-01

    High porosity monolithic aerogels with nanoporous crystalline phases can be obtained from syndiotactic polystyrene and poly(2,6-dimethyl-1,4-phenylene)oxide thermoreversible gels by removing the solvent with supercritical CO2. The presence of crystalline nanopores in the aerogels based on these polymers allows a high uptake associated with a high selectivity of volatile organic compounds from vapor phase or aqueous solutions even at very low activities. The sorption and the fast kinetics make these materials particularly suitable as sorption medium to remove traces of pollutants from water and moist air.

  5. Research and Design on Monolithic Integrated R/D Conversion and Digital P rocessing Technology%单片集成R/D转换及数字处理技术研究与设计

    Institute of Scientific and Technical Information of China (English)

    陈大科

    2015-01-01

    This paper introduces the design method of R/D conversion technology and products. A novel Implementation of the digital R/D converter combining digital signal processing technology with sigma⁃delta (Σ-Δ) ADC is established. The typical structure of Σ-Δ ADC is optimized to fit for the requirement of real⁃time data processing. The digital phase sensitive detection is acquired by calculating the cross correlation function of internal synthetic reference sequence and digital signal sequence of Σ-Δ modulator. To realize fast conversion, the digital processing and filtering circuit in ADC are integrated into the type 2 tracking closed⁃loop system. This method can simplify circuit structure and reduce chip size. The RTL code of dig⁃ital integrator and filter are designed in Verilog language. The proposed design is verified by mixed⁃signal simulation. The co⁃simulation method based on MATLAB/Simulink and Cadence is used to analysis convertor output spectrum. Finally, a practi⁃cal circuit for R/D converter is described. The experiments results show that the presented method is effective and the per⁃formances of the R/D convertor come up to the level of the same products from abroad.%介绍了R/D转换技术及单芯片产品的设计方法。探讨采用数字信号处理技术和Σ-ΔADC(模数转换器)实现数字R/D转换的方法。为满足系统的实时数据处理要求,对典型的Σ-ΔADC结构进行了改进,将Σ-Δ调制器得到信号的数字序列,通过内部合成正弦波序列和信号序列的互相关函数实现数字相敏检测。将ADC中的数字处理及滤波电路融合到R/D解算的2型闭环系统中,实现快速转换,简化了电路设计并有效降低芯片面积。数字积分及滤波器采用Verilog语言编写的RTL级代码,采用数模混合仿真实现R/D的整体电路验证。通过Matlab与cadence软件协同仿真方法对转换数据进行频谱特性分析。最后,给

  6. Monolithic columns in plant proteomics and metabolomics.

    Science.gov (United States)

    Rigobello-Masini, Marilda; Penteado, José Carlos Pires; Masini, Jorge Cesar

    2013-03-01

    Since "omics" techniques emerged, plant studies, from biochemistry to ecology, have become more comprehensive. Plant proteomics and metabolomics enable the construction of databases that, with the help of genomics and informatics, show the data obtained as a system. Thus, all the constituents of the system can be seen with their interactions in both space and time. For instance, perturbations in a plant ecosystem as a consequence of application of herbicides or exposure to pollutants can be predicted by using information gathered from these databases. Analytical chemistry has been involved in this scientific evolution. Proteomics and metabolomics are emerging fields that require separation, identification, and quantification of proteins, peptides, and small molecules of metabolites in complex biological samples. The success of this work relies on efficient chromatographic and electrophoretic techniques, and on mass spectrometric detection. This paper reviews recent developments in the use of monolithic columns, focusing on their applications in "top-down" and "bottom-up" approaches, including their use as supports for immobilization of proteolytic enzymes and their use in two-dimensional and multidimensional chromatography. Whereas polymeric columns have been predominantly used for separation of proteins and polypeptides, silica-based monoliths have been more extensively used for separation of small molecules of metabolites. Representative applications in proteomics and in analysis of plant metabolites are given and summarized in tables.

  7. Growth techniques for monolithic YBCO solenoidal magnets

    Energy Technology Data Exchange (ETDEWEB)

    Scruggs, S.J. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States)]. E-mail: Sscruggs2@uh.edu; Putman, P.T. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Fang, H. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Alessandrini, M. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Salama, K. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States)

    2006-10-01

    The possibility of growing large single domain YBCO solenoids by the use of a large seed has been investigated. There are two known methods for producing a similar solenoid. This first is a conventional top seeded melt growth process followed by a post processing machining step to create the bore. The second involves using multiple seeds spaced around the magnet bore. The appeal of the new technique lies in decreasing processing time compared to the single seed technique, while avoiding alignment problems found in the multiple seeding technique. By avoiding these problems, larger diameter monoliths can be produced. Large diameter monoliths are beneficial because the maximum magnetic field produced by a trapped field magnet is proportional to the radius of the sample. Furthermore, the availability of trapped field magnets with large diameter could enable their use in applications that traditionally have been considered to require wound electromagnets, such as beam bending magnets for particle accelerators or electric propulsion. A comparison of YBCO solenoids grown by the use of a large seed and grown by the use of two small seeds simulating multiple seeding is made. Trapped field measurements as well as microstructure evaluation were used in characterization of each solenoid. Results indicate that high quality growth occurs only in the vicinity of the seeds for the multiple seeded sample, while the sample with the large seeded exhibited high quality growth throughout the entire sample.

  8. High surface area, high permeability carbon monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Lagasse, R.R.; Schroeder, J.L. [Sandia National Labs., Albuquerque, NM (United States). Organic Materials Processing Dept.

    1994-12-31

    The goal of this work is to prepare carbon monoliths having precisely tailored pore size distribution. Prior studies have demonstrated that poly(acrylonitrile) can be processed into a precursor having tailored macropore structure. Since the macropores were preserved during pyrolysis, this synthetic process provided a route to porous carbon having macropores with size =0.1 to 10{mu}m. No micropores of size <2 nm could be detected in the carbon, however, by nitrogen adsorption. In the present work, the authors have processed a different polymer, poly(vinylidene chloride) into a macroporous precursor, Pyrolysis produced carbon monoliths having macropores derived from the polymer precursor as well as extensive microporosity produced during the pyrolysis of the polymer. One of these carbons had BET surface area of 1,050 m{sup 2}/g and about 1.2 cc/g total pore volume, with about 1/3 of the total pore volume in micropores and the remainder in 1{mu}m macropores. No mesopores in the intermediate size range could be detected by nitrogen adsorption. Carbon materials having high surface area as well as micron size pores have potential applications as electrodes for double layer supercapacitors containing liquid electrolyte, or as efficient media for performing chemical separations.

  9. Hydrothermal method for preparing calcium phosphate monoliths

    Directory of Open Access Journals (Sweden)

    García Carrodeguas Raúl

    2003-01-01

    Full Text Available A new hydrothermal route for preparing biphasic calcium phosphate monoliths is proposed. Firstly, a slurry of beta-tricalcium phosphate/ortho-phosphoric acid (b-TCP/H3PO4 is cast into the desired final shape and size to obtain a block composed of dicalcium phosphate dihydrate (DCPD and b-TCP. This block is then treated in 1.0 M Na2HPO4 at 60 °C in order to hydrolyze the DCPD into Ca10-x(HPO4x(PO4 6-x(OH2-x (CDHA and Ca8H2(PO46 .5H2O (OCP. The result is a monolithic piece which preserves the initial shape and size, but which is composed instead of CDHA, OCP, and b-TCP. During the initial stage, when the pH is slightly alkaline, the product of DCPD hydrolysis is CDHA. However, when a neutral or slightly acidic pH is reached OCP is formed. Test samples processed by this method showed complete conversion of DCPD into CDHA and OCP after 112 h of hydrolysis, and with a compressive strength of 16.2 MPa, similar to cancellous bone.

  10. Components for monolithic fiber chirped pulse amplification laser systems

    Science.gov (United States)

    Swan, Michael Craig

    The first portion of this work develops techniques for generating femtosecond-pulses from conventional fabry-perot laser diodes using nonlinear-spectral-broadening techniques in Yb-doped positive dispersion fiber ampliers. The approach employed an injection-locked fabry-perot laser diode followed by two stages of nonlinear-spectral-broadening to generate sub-200fs pulses. This thesis demonstrated that a 60ps gain-switched fabry-perot laser-diode can be injection-locked to generate a single-longitudinal-mode pulse and compressed by nonlinear spectral broadening to 4ps. Two problems have been identified that must be resolved before moving forward with this approach. First, gain-switched pulses from a standard diode-laser have a number of characteristics not well suited for producing clean self-phase-modulation-broadened pulses, such as an asymmetric temporal shape, which has a long pulse tail. Second, though parabolic pulse formation occurs for any arbitrary temporal input pulse profile, deviation from the optimum parabolic input results in extensively spectrally modulated self-phase-modulation-broadened pulses. In conclusion, the approach of generating self-phase-modulation-broadened pulses from pulsed laser diodes has to be modified from the initial approach explored in this thesis. The first Yb-doped chirally-coupled-core ber based systems are demonstrated and characterized in the second portion of this work. Robust single-mode performance independent of excitation or any other external mode management techniques have been demonstrated in Yb-doped chirally-coupled-core fibers. Gain and power efficiency characteristics are not compromised in any way in this novel fiber structure up to the 87W maximum power achieved. Both the small signal gain at 1064nm of 30.3dB, and the wavelength dependence of the small signal gain were comparable to currently deployed large-mode-area-fiber technology. The efficiencies of the laser and amplifier were measured to be 75% and 54

  11. High-Power and Low-Noise 10-GHz All-Active Monolithic Mode-Locked Lasers with Surface Etched Bragg Grating

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2007-01-01

    We have fabricated 4.4 mm long monolithic InAlGaAsP/InP mode-locked lasers with integrated deeply surface etched DBR-mirrors. The lasers produce 3.7 ps transform-limited Gaussian pulses with 10 mW average power and 250 fs timing jitter.......We have fabricated 4.4 mm long monolithic InAlGaAsP/InP mode-locked lasers with integrated deeply surface etched DBR-mirrors. The lasers produce 3.7 ps transform-limited Gaussian pulses with 10 mW average power and 250 fs timing jitter....

  12. Improved Design Techniques for Switched-Capacitor Ladder Filters.

    Science.gov (United States)

    Hsu, Teng-Hsien

    Using the new developments of MOS technology, switched-capacitor filters which consist of operational amplifiers, capacitors and switches in monolithic form, were widely investigated and put into practical forms. The switched-capacitor ladder filters have derived from doubly-terminated reactance two-ports. The main part of this dissertation is aimed at improving the efficiency and eliminating some shortcomings of the bilinear design technique. Two novel input stages which incorporate the necessary sample-and-hold function into the bilinear ladder filters are presented. The circuits are insensitive to parasitic capacitances. Some techniques to reduce the number of operational amplifier for bilinear switched-capacitor ladder filters are given. The number of top-plate parasitic-sensitive capacitors is less than in any of the existing design techniques. The clock feedthrough effects of pseudo-N-path switched-capacitor filter using lowpass filters as path filters are eliminated by the improved technique with doubling the number of operational amplifiers. Two-phase pseudo -N-path switched-capacitor filters can be obtained by tripling the number of operational amplifiers. The design technique for extending bilinear lowpass switched-capacitor ladder filters from odd orders to even orders is presented. One of the factors limiting the speed of bilinear switched-capacitor ladder filters is the delay-free loops. The techniques for breaking delay-free loops of low-order switched -capacitor filters are introduced. Digital ladder filters can be obtained through those switched-capacitor filters without delay-free loops. Numerical examples are given to compare the following digital filters: general cascade realization, wave digital filter, the digital filters derived from switched-capacitor filters - cascade and ladder. An improved high speed switched-capacitor linear interpolator, and nonlinear interpolators are described. The circuits are completely parasitic-insensitive. Two

  13. Thermal cycling effect in U-10Mo/Zry-4 monolithic nuclear fuel

    Science.gov (United States)

    Lopes, Denise A.; Zimmermann, Angelo J. O.; Silva, Selma L.; Piqueira, J. R. C.

    2016-05-01

    Uranium alloys in a monolithic form have been considered attractive candidates for high density nuclear fuel. However, this high-density fissile material configuration keeps the volume permitted for the retention of fission products at a minimum. Additionally, the monolithic nuclear fuel has a peculiar configuration, whereby the fuel is in direct contact with the cladding. How this fuel configuration will retain fission products and how this will affect its integrity under various physical conditions - such as thermal cycling - are some of the technological problems for this new fuel. In this paper, the effect of out-of-pile thermal cycling is studied for a monolithic fuel plate produced by a hot co-rolling method using U-10Mo (wt %) as the fuel alloy and Zircaloy-4 as the cladding material. After performing 10 thermal cycles from 25 to 400 °C at a rate of 1 °C/min (∼125 h), the fuel alloy presented several fractures that were observed to occur in the last three cycles. These cracks nucleated approximately in the center of the fuel alloy and crossed the interdiffusion zone initiating an internal crack in the cladding. The results suggest that the origin of these fractures is the thermal fatigue of the U-10Mo alloy caused due to the combination of two factors: (i) the high difference in the thermal expansion coefficient of the fuel and of the cladding material, and (ii) the bound condition of fuel/cladding materials in this fuel element configuration.

  14. Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures

    Science.gov (United States)

    Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio

    2017-06-01

    Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al2O3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10-3 Ω cm-1, 11 cm2 V-1 s-1, and 1.62 × 1020 cm-3, resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.

  15. Preparation and Characterization of Temperature-responsive Porous Monoliths

    Institute of Scientific and Technical Information of China (English)

    ZHANG, Rongyue; QI, Li; XIN, Peiyong; YANG, Gengliang; CHEN, Yi

    2009-01-01

    A new temperature-responsive porous monolith has been prepared by surface-initiated activators generated by electron transfer atom transfer radical polymerization (AGET ATRP) grafting poly(N-isopropylacrylamide) (PNIPAAm) within the pores of the porous polymer monolith. The grafting copolymerization was carried out by a method based on a continuous flow-through technique without special deoxygenation procedure needed in the general ATRP. The addition of ascorbic acid could counteract the oxidation effect of oxygen diffusing into the reaction system. The resulting grafted monolith was characterized by a mercury intrusion method and the size of macropore was 3.65 μm, which was suitable for flow through the monolith for HPLC. The thermally responsive property of the grafted monolith was evaluated by HPLC using steroids with various hydrophobicities as probes. Through determination of retention factor of each steroid on the grafted monolith at different temperatures using water as mobile phase, it was found that the slope of the plot of retention factor of each steroid versus the temperature changed around the low critical solution temperature (LCST, 32 ℃) of PNIPAAm in water. It was relative to the grafted PNIPAAm temperature sensitivity that a hydrophobic and hydrophilic alternation would take place around its LCST.Based on this thermally responsive property, the grafted monolith was used as stationary phase for HPLC and to separate the steroids using water as mobile phase by changing the column temperature. As a mobile phase, water is much better than organic solvents concerning the environment.

  16. Influence of different carbon monolith preparation parameters on pesticide adsorption

    Directory of Open Access Journals (Sweden)

    Vukčević Marija

    2013-01-01

    Full Text Available The capacity of carbon monolith for pesticide removal from water, and the mechanism of pesticide interaction with carbon surface were examined. Different carbon monolith samples were obtained by varying the carbonization and activation parameters. In order to examine the role of surface oxygen groups in pesticide adsorption, carbon monolith surface was functionalized by chemical treatment in HNO3, H2O2 and KOH. The surface properties of the obtained samples were investigated by BET surface area, pore size distribution and temperature-programmed desorption. Adsorption of pesticides from aqueous solution onto activated carbon monolith samples was studied by using five pesticides belonging to different chemical groups (acetamiprid, dimethoate, nicosulfuron, carbofuran and atrazine. Presented results show that higher temperature of carbonization and the amount of activating agent allow obtaining microporous carbon monolith with higher amount of surface functional groups. Adsorption properties of the activated carbon monolith were more readily affected by the amount of the surface functional groups than by specific surface area. Results obtained by carbon monolith functionalisation showed that π-π interactions were the main force for adsorption of pesticides with aromatic structure, while acidic groups play an important role in adsorption of pesticides with no aromatic ring in the chemical structure.

  17. Latching micro optical switch

    Science.gov (United States)

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  18. Activatable iRGD-based peptide monolith: Targeting, internalization, and fluorescence activation for precise tumor imaging.

    Science.gov (United States)

    Cho, Hong-Jun; Lee, Sung-Jin; Park, Sung-Jun; Paik, Chang H; Lee, Sang-Myung; Kim, Sehoon; Lee, Yoon-Sik

    2016-09-10

    A disulfide-bridged cyclic RGD peptide, named iRGD (internalizing RGD, c(CRGDK/RGPD/EC)), is known to facilitate tumor targeting as well as tissue penetration. After the RGD motif-induced targeting on αv integrins expressed near tumor tissue, iRGD encounters proteolytic cleavage to expose the CendR motif that promotes penetration into cancer cells via the interaction with neuropilin-1. Based on these proteolytic cleavage and internalization mechanism, we designed an iRGD-based monolithic imaging probe that integrates multiple functions (cancer-specific targeting, internalization and fluorescence activation) within a small peptide framework. To provide the capability of activatable fluorescence signaling, we conjugated a fluorescent dye to the N-terminal of iRGD, which was linked to the internalizing sequence (CendR motif), and a quencher to the opposite C-terminal. It turned out that fluorescence activation of the dye/quencher-conjugated monolithic peptide probe requires dual (reductive and proteolytic) cleavages on both disulfide and amide bond of iRGD peptide. Furthermore, the cleavage of the iRGD peptide leading to fluorescence recovery was indeed operative depending on the tumor-related angiogenic receptors (αvβ3 integrin and neuropilin-1) in vitro as well as in vivo. Compared to an 'always fluorescent' iRGD control probe without quencher conjugation, the dye/quencher-conjugated activatable monolithic peptide probe visualized tumor regions more precisely with lower background noise after intravenous injection, owing to the multifunctional responses specific to tumor microenvironment. All these results, along with minimal in vitro and in vivo toxicity profiles, suggest potential of the iRGD-based activatable monolithic peptide probe as a promising imaging agent for precise tumor diagnosis.

  19. 关于切换回归的集成模糊聚类算法 GFC%An Integrated Fuzzy Clustering Algorithm GFC for Switching Regressions

    Institute of Scientific and Technical Information of China (English)

    王士同; 江海峰; 陆宏钧

    2002-01-01

    已经有多个方法可用于解决切换回归问题.根据所提出的基于Newton引力定理的引力聚类算法GC,结合模糊聚类算法,进一步提出了新的集成模糊聚类算法 GFC.理论分析表明GFC 能收敛到局部最小.实验结果表明GFC在解决切换回归问题时,比标准模糊聚类算法更有效,特别在收敛速度方面.%In order to solve switching regression problems, many approaches have been investigated. In this paper, anintegrated fuzzy clustering algorithm GFC that combines gravity-based clustering algorithm GC with fuzzy clustering is presented. GC, as a new hard clustering algorithm presented here, is based on the well-known Newton's Gravity Law. The theoretic analysis shows that GFC can conve rge to a local minimum of the object function. Experimental results show that GFC for switching regression problems has better performance than standard fuzzy clustering algorithms, especially in terms of convergence speed.

  20. Effects of Cigarette Smoke, Cessation, and Switching to Two Heat-Not-Burn Tobacco Products on Lung Lipid Metabolism in C57BL/6 and Apoe-/- Mice-An Integrative Systems Toxicology Analysis.

    Science.gov (United States)

    Titz, Bjoern; Boué, Stéphanie; Phillips, Blaine; Talikka, Marja; Vihervaara, Terhi; Schneider, Thomas; Nury, Catherine; Elamin, Ashraf; Guedj, Emmanuel; Peck, Michael J; Schlage, Walter K; Cabanski, Maciej; Leroy, Patrice; Vuillaume, Gregory; Martin, Florian; Ivanov, Nikolai V; Veljkovic, Emilija; Ekroos, Kim; Laaksonen, Reijo; Vanscheeuwijck, Patrick; Peitsch, Manuel C; Hoeng, Julia

    2016-02-01

    The impact of cigarette smoke (CS), a major cause of lung diseases, on the composition and metabolism of lung lipids is incompletely understood. Here, we integrated quantitative lipidomics and proteomics to investigate exposure effects on lung lipid metabolism in a C57BL/6 and an Apolipoprotein E-deficient (Apoe(-/-)) mouse study. In these studies, mice were exposed to high concentrations of 3R4F reference CS, aerosol from potential modified risk tobacco products (MRTPs) or filtered air (Sham) for up to 8 months. The 2 assessed MRTPs, the prototypical MRTP for C57BL/6 mice and the Tobacco Heating System 2.2 for Apoe(-/-) mice, utilize "heat-not-burn" technologies and were each matched in nicotine concentrations to the 3R4F CS. After 2 months of CS exposure, some groups were either switched to the MRTP or underwent cessation. In both mouse strains, CS strongly affected several categories of lung lipids and lipid-related proteins. Candidate surfactant lipids, surfactant proteins, and surfactant metabolizing proteins were increased. Inflammatory eicosanoids, their metabolic enzymes, and several ceramide classes were elevated. Overall, CS induced a coordinated lipid response controlled by transcription regulators such as SREBP proteins and supported by other metabolic adaptations. In contrast, most of these changes were absent in the mice exposed to the potential MRTPs, in the cessation group, and the switching group. Our findings demonstrate the complex biological response of the lungs to CS exposure and support the benefits of cessation or switching to a heat-not-burn product using a design such as those employed in this study. © The Author 2015. Published by Oxford University Press on behalf of the Society of Toxicology.