WorldWideScience

Sample records for monolithic integrated module

  1. Low-Loss 256-Channel AWG Module with Monolithically Integrated Spot-Size Converters

    Institute of Scientific and Technical Information of China (English)

    M. Itoh; S. Kamei; M. Ishii; Y. Hida; T. Shibata; Y. Hibino

    2003-01-01

    We developed a compact fiber-pigtailed 256-channel AWG module with 1.5% △ waveguides.By monolithically integrating spot-size converters with input/output waveguides, we achieved a lowinsertion loss of 2.6-4.1 dB with a low background crosstalk of -40 dB.

  2. Low-Loss 256-Channel AWG Module with Monolithically Integrated Spot-Size Converters

    Institute of Scientific and Technical Information of China (English)

    M.; Itoh; S.; Kamei; M.; Ishii; Y.; Hida; T.; Shibata; Y.; Hibino

    2003-01-01

    We developed a compact fiber-pigtailed 256-channel AWG module with 1.5% A waveguides. By monolithically integrating spot-size converters with input/output waveguides, we achieved a low insertion loss of 2.6-4.1 dB with a low background crosstalk of-40 dB.

  3. Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

    Science.gov (United States)

    Wang, Yang; Pan, Jiao-Qing; Zhao, Ling-Juan; Zhu, Hong-Liang; Wang, Wei

    2010-12-01

    Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

  4. Novel electroabsorption modulator monolithically integrated with spot-size converter

    Institute of Scientific and Technical Information of China (English)

    Lianping Hou; Wei Wang; Hongliang Zhu

    2005-01-01

    @@ A novel 1.55-μm spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100μm) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2° and 13.0°, respectively.

  5. Novel electroabsorption modulator monolithically integrated with spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang

    2005-01-01

    A novel 1.55-?m spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100 ?m) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2 deg. and 13.0 deg., respectively.

  6. Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

    Science.gov (United States)

    Sato, Kenji; Wakita, Koichi; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo; Takada, Atsushi

    1994-07-01

    Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.

  7. Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser

    Science.gov (United States)

    Oennegren, Jan; Svedin, Jan; Sahlen, Olof; Jansson, Mats; Alping, Arne G.

    1995-10-01

    Electroabsorption modulators (EA) are attractive components for very high speed digital links (up to 40 Gbit/s). The objective of the present work has been to evaluate the analog performance and use of a Franz Keldysh modulator (FK) monolithically integrated with a DFB laser (DFB/FK-modulator) operating at 1550 nm. This DFB/FK-modulator is a combination of a directly modulated laser diode and an external modulator in one chip. The analog performance is therefore depending on both the modulator bias voltage and DFB-laser bias current. The normal optical output characteristic from an EA-modulator has a strongly nonlinear behavior. The modulator described in this paper shows for low bias voltage and/or high laser current a linear bahavior. This linear behavior is mainly due to the hole pile-up effect at the p/i-interface of the modulator. In digital transmission system this hole pile-up effect is a disadvantage, but in an analog transmission system it can be used to achieve better analog performance. Measurements (and simulations) on the DFB/FK-modulator show that its analog performance competes well with direct modulated FP and DFB lasers, especially if the modulator is biased for optimum analog performance.

  8. Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Li, B. X.; Zhou, F.; Wang, B. J.; Wang, L. F.; Bian, J.; Zhao, L. J.; Wang, W.

    2006-04-01

    A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10-10 is confirmed.

  9. Optical 40 GHz pulse source module based on a monolithically integrated mode locked DBR laser

    Science.gov (United States)

    Huettl, B.; Kaiser, R.; Kroh, M.; Schubert, C.; Jacumeit, G.; Heidrich, H.

    2005-11-01

    In this paper the performance characteristics of compact optical 40 GHz pulse laser modules consisting of a monolithic mode-locked MQW DBR laser on GaInAsP/InP are reported. The monolithic devices were fabricated as tunable multi-section buried heterostructure lasers. A DBR grating is integrated at the output port of an extended cavity in order to meet the standardized ITU wavelength channels allocated in the spectral window around 1.55 μm in optical high speed communication networks. The fabricated 40 GHz lasers modules not only emit short optical pulses (< 1.5 ps) with very low amplitude noise (<1.5 %) and phase noise levels (timing jitter: 50 fs) but also enable good pulse-to-pulse phase and long-term stability. A wavelength tuning range of 6 nm is possible and large locking bandwidths between 100 ... 260 MHz are observed. All data have been achieved by operating the lasers in a hybrid mode-locking scheme with a required minimum micro-wave power of only 12 dBm for pulse synchronization. Details on laser chip architecture and module performance are summarized and the results of a stable and error free module performance in first 160 Gb/s (4 x 40 Gb/s OTDM) RZ-DPSK transmission experiments are presented.

  10. Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Feng, Wen; Liang, Song; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-06-01

    A 1.60-µm laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3×10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

  11. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  12. Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform

    Science.gov (United States)

    Liu, Jifeng; Pan, Dong; Jongthammanurak, Samerkhae; Wada, Kazumi; Kimerling, Lionel C.; Michel, Jurgen

    2007-01-01

    We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electroabsorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO2(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.

  13. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser

    Science.gov (United States)

    Cheng, YuanBing; Pan, JiaoQing; Zhou, Fan; Wang, BaoJun; Zhu, Hongliang; Zhao, Lingjuan; Wang, Wei

    2007-11-01

    High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250 μm DFB and 170 μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

  14. 5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator

    Science.gov (United States)

    Zhang, Y. X.; Zhao, L. J.; Niu, B.; Pan, J. Q.; Wang, W.

    2010-05-01

    A novel EAM/PD monolithically-integrated optical logic element is presented. 5Gb/s optical logic AND gate operations at about -2 V for non-return-to-zero (NRZ) signals with8.4dB extinction ratio and16mW absorbed optical power was demonstrated.

  15. Monolithic microwave integrated circuits

    Science.gov (United States)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  16. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Zhou, Fan; Wang, Baojun; Bian, Jing; Wang, Wei

    2006-02-01

    We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0°×12.6°, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber.

  17. Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

    Science.gov (United States)

    Sato, Kenji; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo

    1996-10-01

    Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode-locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained.

  18. Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3-micrometer wavelength

    Science.gov (United States)

    Gerlach, Philipp; Peschke, Martin; Wenger, Thomas; Saravanan, Brem K.; Hanke, Christian; Lorch, Steffen; Michalzik, Rainer

    2006-04-01

    We report on the design and experimental results of monolithically integrated optoelectronic devices containing distributed feedback (DFB) laser, electroabsorption modulator (EAM), and semiconductor optical amplifier (SOA). Common InGaAlAs multiple quantum well (MQW) layers are used in all device sections. The incorporation of local lateral metal gratings in the DFB section enables device fabrication by single-step epitaxial growth. The emission wavelength is λ=1.3 micrometer. More than 2 mW single-mode fiber-coupled output power as well as 10 dB/2 V static extinction ratio have been achieved. Modulation experiments clearly show 10 Gbit/s capability.

  19. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  20. Integrated optical and nuclear simulation of a monolithic LYSO:Ce based PET detector module

    Science.gov (United States)

    Játékos, B.; Patay, G.; Lőrincz, E.; Erdei, G.

    2017-05-01

    In the recent years new digital photon counter devices (also known as silicon photomultipliers, SiPMs) were designed and manufactured to be used specifically in positron emission tomography (PET) scanners. Finely pixelated SiPM arrays have opened new opportunities in PET detector development, such as the utilization of monolithic scintillator crystals. We worked out a simulation tool (SCOPE2) to assist the optimization and characterization of such PET detector modules. In the present paper we report the first application of SCOPE2 on the performance evaluation of a prototype PET detector module. The PET detector is based on monolithic LYSO:Ce scintillator crystal and a fully digital, silicon photon-counter, SPADnet-I. A new interface has been developed for SCOPE2 to access GATE simulation results. A combination of GATE and SCOPE2 was used to simulate excitation of the prototype PET detector with an electronically collimated γ -beam. Measurement results from the collimated γ-beam experiment were compared with the combined simulation. A good agreement was observed in the tendencies of total count spectrum and point of interaction distribution. We used the performance evaluation to understand and explain the measurement results in detail.

  1. Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

    Science.gov (United States)

    O'Brien, S.; Shealy, J. R.; Wicks, G. W.

    1991-04-01

    The monolithic integration of an intracavity modulator with a multiple quantum well (Al)GaAs laser has been accomplished with the use of selective partial interdiffusion. Interdiffusion was used to create a blue-shifted and semitransparent modulator section in a ridge laser structure. In measuring the total optical output power from the devices, steady-state extinction ratios of 20 dB were measured at reverse biases of -4.6 and -3.6 V for modulator sections with lengths of 200 and 400 microns, respectively. Shifting of the lasing mode toward longer wavelengths was also observed making the structure useful as a tunable device and for frequency modulation applications.

  2. Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-08-01

    We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3° × 10.6°, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  3. Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD

    Science.gov (United States)

    Lammert, Robert M.; Smith, Gary M.; Hughes, J. S.; Osowski, Mark L.; Jones, A. M.; Coleman, James J.

    1997-01-01

    The design and operation of multiple-quantum well (MQW) wavelength tunable distributed Bragg reflector (DBR) lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area metal-organic chemical vapor deposition (MOCVD) are presented. Uncoated devices exhibit cw threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet and 0.06 W/A from the modulator facet. After the application of facet coatings, slope efficiencies from the modulator facet increase to 0.14 W/A. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibit high extinction ratios of 40 dB at a modulator bias of 1.25 V. Photo-generated current versus optical power plots indicate that the extinction ratios are not limited by carrier build- up in the modulator quantum wells.

  4. Monolithically integrated optoelectronic down-converter (MIOD)

    Science.gov (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  5. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  6. Characterization of efficiency-limiting resistance losses in monolithically integrated Cu(In,Ga)Se2 solar modules.

    Science.gov (United States)

    Yoon, Ju-Heon; Park, Jong-Keuk; Kim, Won Mok; Lee, JinWoo; Pak, Hisun; Jeong, Jeung-Hyun

    2015-01-09

    The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy.

  7. Monolithic integration of optical mode-size converter and high-speed electroabsorption modulators using laterally undercut waveguide

    Science.gov (United States)

    Wu, Tsu-Hsiu; Lin, Fang-Zheng; Yan, Hung-Jung; Wu, Jui-Pin; Chiu, Yi-Jen

    2010-02-01

    A new monolithic integration scheme of fabricating optical spot-size converter (SSC) is realized in this work. High-speed electroabsorption modulator (EAM) is used to integrate such SSC. By laterally tapering the active region of an optical waveguide through undercut active region, a vertically asymmetric waveguide coupler can be defined to form an SSC, where the top is a tapered active waveguide, and the bottom is a large core of passive waveguide mode-matched to single-mode fiber (SMF). Through the top tapered active waveguide, the effective index can be gradually varied in the propagation direction, momentarily matching the bottom low-index passive waveguide. It not only performs the resonant coupling in such asymmetric waveguide coupler, but also locks the transferred power by the tapered structure. InGaAsP/InP multiple quantum wells are used as active region of active waveguide. Based on the highly selective etching properties between InGaAsP and InP, the tapered active waveguide can be fabricated by a method, called selectively undercut-etching-active-region (UEAR), enabling the processing a narrow waveguide structure (up to submicron) by general wet etching from a large waveguide ridge. It also leads to good microwave performance of waveguide. By taking this advantage, a SSC-integrated EAM can perform high-speed electrical-to-optical (EO) response as well as low-insertion loss properties. A mode transfer efficiency of 70% is obtained in such SSC. By narrowing waveguide by UEAR, over 40 GHz of -3dB electrical-to-optical (EO) response is obtained from this device. The high efficient SSC integrated with high-speed EAM suggests that the UEAR technique can have potential for applications in high-speed optoelectronic fields.

  8. A monolithic integrated photonic microwave filter

    Science.gov (United States)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2016-12-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  9. Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing; Wang, Wei

    2005-09-01

    We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0° × 12.6°, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  10. Semiconductor optical amplifier monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converters

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Wang, Baojun; Zhou, Fan; Wang, Lufeng; Bian, Jing; Wang, Wei

    2005-09-01

    We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) were incorporated. Such combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550~1600nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0°×12.6°, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber.

  11. Planar, monolithically integrated coil

    NARCIS (Netherlands)

    Roozeboom, F.; Reefman, D.; Klootwijk, J.H.; Tiemeijer, L.F.; Ruigrok, J.

    2013-01-01

    The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for

  12. Thin film CIGS photovoltaic modules: monolithic integration and advanced packaging for high performance, high reliability and low cost

    Science.gov (United States)

    Eldada, Louay

    2011-01-01

    In recent years, thin-film photovoltaic companies started realizing their low manufacturing cost potential, and have been grabbing an increasingly larger market share. Copper Indium Gallium Selenide (CIGS) is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, and a fast high-quality CIGS reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable cover plates in the first stage, while in the second stage the CIGS layer is formed by rapid heating with Se confinement. HelioVolt also developed best-in-class packaging technologies that provide unparalleled environmental stability. High quality CIGS films with large grains were fabricated on the production line, and high-performance highreliability monolithic modules with a form factor of 120 cm × 60 cm are being produced at high yield and low cost. With conversion efficiency levels around 14% for cells and 12% for modules, HelioVolt is commercializing the process on its first production line with 20 MW capacity, and is planning its next GW-scale factory.

  13. Monolithically integrated absolute frequency comb laser system

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  14. Monolithically integrated Ge CMOS laser

    Science.gov (United States)

    Camacho-Aguilera, Rodolfo

    2014-02-01

    Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm2. Improvements in Ge work

  15. Monolithic Time Delay Integrated APD Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The overall goal of the proposed program by Epitaxial Technologies is to develop monolithic time delay integrated avalanche photodiode (APD) arrays with sensitivity...

  16. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

    Science.gov (United States)

    Zhang, Yun-Xiao; Liao, Zai-Yi; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Wang, Wei

    2010-07-01

    We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -6.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip.

  17. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Science.gov (United States)

    Liu, Hong-Bo; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Zhou, Fan; Wang, Bao-Jun; Wang, Wei

    2008-10-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6mW. The wavelength tuning range covers 30nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

  18. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-Bo; ZHAO Ling-Juan; PAN Jiao-Qing; ZHU Hong-Liang; ZHOU Fan; WANG Bao-Jun; WANG Wei

    2008-01-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well eleetroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI)for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections,which reduces internal absorption loss. The experimental results show that the threshold current Ith=62 mA,and output power reaches 3.6 roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of -5 V.

  19. Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2017-02-01

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon Distributed Bragg Reflector (DBR) tunable lasers and silicon Mach-Zehnder modulator (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in details. Data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the lasers Bragg reflectors.

  20. Monolithically integrated interferometer for optical displacement measurement

    Science.gov (United States)

    Hofstetter, Daniel; Zappe, Hans P.

    1996-01-01

    We discuss the fabrication of a monolithically integrated optical displacement sensors using III-V semiconductor technology. The device is configured as a Michelson interferometer and consists of a distributed Bragg reflector laser, a photodetector and waveguides forming a directional coupler. Using this interferometer, displacements in the 100 nm range could be measured at distances of up to 45 cm. We present fabrication, device results and characterization of the completed interferometer, problems, limitations and future applications will also be discussed.

  1. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    Science.gov (United States)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-10-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W-1. The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S21) is below 0.4 dB from 0 to 40 GHz and the return loss (S11) is less than -20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S21 shifting caused by the packaging structure is below 0.5 dB, and S11 is less than -10 dB from 8 GHz to 14 GHz.

  2. Monolithic Integration of GaN-based LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, University of Tokushima 2-1 Minami-Josanjima, Tokushima 770-8506 (Japan)

    2011-02-01

    The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for high-voltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.

  3. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    Science.gov (United States)

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  4. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  5. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Hall, R.B.; Rand, J.A.; Cotter, J.E. [AstroPower, Inc., Newark, DE (United States)

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  6. Monolithic integration of an InGaAsP InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhou, F.; Wang, B. J.; Wang, L. F.; Wang, W.

    2005-06-01

    The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG method is performed. A large band-gap photoluminescence wavelength shift of 88 nm was obtained with a small mask width variation (0-30 µm). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 µm and EAM length of 150 µm has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

  7. Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-micron laser

    Science.gov (United States)

    Allovon, Michel; Fouchet, Sylvie; Harmand, Jean-Christophe; Ougazzaden, Abdallah; Rose, Benoit; Gloukhian, Andre; Devaux, Fabrice

    1995-02-01

    We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE (Molecular Beam Epitaxy). It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).

  8. 10 Gbps Colorless Optical Source in Wavelength-Division Multiplexed Passive Optical Networks for Monolithic Integration of Deep-Ridge Waveguide Electroabsorption Modulator with Planar Buried-Heterostructure Semiconductor Optical Amplifier

    Science.gov (United States)

    Kim, Dong Churl; Kim, Ki Soo; Kim, Hyun-Soo; Choi, Byung-Seok; Kwon, O.-Kyun

    2012-05-01

    For the 10 Gbps colorless optical source in wavelength-division multiplexed passive optical networks (WDM-PONs), we have fabricated a semiconductor optical amplifier-reflective electorabsorption modulator (SOA-REAM) by monolithic integration of deep-ridge waveguide REAM (DRW-REAM) with planar buried-heterostructure (PBH) SOA using a PNP-current blocking layer. The SOA-REAM has a spot-size convertor for easy fiber coupling. Using a butterfly module with an SMA connector, we have packaged the SOA-REAM. At a -10 dBm input power of 1550 nm, the saturation output power is about 6 dBm. At 10.7 Gbps, we can obtain clear eye diagrams, and the power penalty at 10-9 bit-error rate (BER) after 20 km transmission is less than 1 dB over 35 nm.

  9. Pulse width tunable subpicosecond pulse generation from an actively modelocked monolithic MQW laser/MQW electroabsorption modulator

    Science.gov (United States)

    Takada, A.; Sato, K.; Saruwatari, M.; Yamamoto, M.

    1994-05-01

    Actively modelocked pulses are generated from a 1.59 micron MQW laser integrated with an MQW electroabsorption modulator driven at the monolithic cavity frequency. The pulse width is controlled from 39 ps to 0.55 ps by changing the inverse bias voltage applied to the electroabsorption modulator and by linear pulse compression using a fiber.

  10. Design of Monolithic Integrator for Strain-to-Frequency Converter

    Directory of Open Access Journals (Sweden)

    Tuan Mohd. Khairi Tuan Mat

    2012-01-01

    Full Text Available Strain-to-Frequency converter (SFC is a one of the analog conditioner tools that converts any strain signal to the frequency signal. The basic concept of SFC is by detecting any changing of strains, then converting the strain to the voltage signal and converting the voltage signal to the frequency signal. This tool consists of 3 main  components which are strain gauge, differential integrator and comparator. This paper presents the designing and analysis of monolithic integrator that to be used in the Strain-toFrequency converter. The primary goal is to design and simulate the performance of monolithic integrator for SFC using GATEWAY Silvaco Electronic Design Automation (S EDA tools and EXPERT software. The performances of SFC using the designed monolithic integrator are also investigated.

  11. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

    Directory of Open Access Journals (Sweden)

    Matija Podhraški

    2016-03-01

    Full Text Available An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

  12. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem.

    Science.gov (United States)

    Podhraški, Matija; Trontelj, Janez

    2016-03-17

    An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

  13. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

    Science.gov (United States)

    Podhraški, Matija; Trontelj, Janez

    2016-01-01

    An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm. PMID:26999146

  14. Cost and Potential of Monolithic CIGS Photovoltaic Modules

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey; Woodhouse, Michael

    2015-06-17

    A bottom-up cost analysis of monolithic, glass-glass Cu(In,Ga)(Se,S)2 (CIGS) modules is presented, illuminating current cost drivers for this technology and possible pathways to reduced cost. At 14% module efficiency, for the case of U.S. manufacturing, a manufacturing cost of $0.56/WDC and a minimum sustainable price of $0.72/WDC were calculated. Potential for reduction in manufacturing costs to below $0.40/WDC in the long-term may be possible if module efficiency can be increased without significant increase in $/m2 costs. The levelized cost of energy (LCOE) in Phoenix, AZ under different conditions is assessed and compared to standard c-Si.

  15. Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics

    Science.gov (United States)

    Wood, Thomas H.

    1988-05-01

    Semiconductor MQWs represent a new technology for opto-electronics. These MQWs have an electroabsorption effect approximately 50 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  16. A Monolithically Integrated Silicon Modulator with a 10Gb/s 5Vpp or 5.6Vpp Driver in 0.25µm SiGe:C BiCMOS

    Directory of Open Access Journals (Sweden)

    Bernhard eGoll

    2014-11-01

    Full Text Available This paper presents as a novelty a fully monolithically integrated 10Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS transistors a SiGe BiCMOS process (MOS transistors and fast SiGe bipolar transistors is implemented. The fastest bipolar transistors in the BiCMOS product line used have a transit frequency of 120GHz and a collector-emitter breakdown voltage of 2.2V (IHP SG25H3. The main focus of this paper will be given to the electronic drivers, where two driver variants are implemented in the test chips. Circuit descriptions and simulations, which treat the influences of noise and bond wires, are presented. Measurements at separate test chips for the drivers show that the integrated driver variant one has a low power consumption in the range of 0.66W to 0.68W but a high gain of S21=37dB. From the large signal point of view this driver delivers an inverted as well as a non-inverted output data signal between 0V and 2.5V (5Vpp differential. Driver variant one is supplied with 2.5V and with 3.5V. Bit-error-ratio (BER measurements resulted in a BER better than 10E-12 for voltage differences of the input data stream down to 50mVpp. Driver variant two, which is an adapted version of driver variant one, is supplied with 2.5V and 4.2V, consumes 0.83W to 0.87W, delivers a differential data signal with 5.6Vpp at the output and has a gain of S21=40dB. The chip of the fully integrated modulator occupies an area of 12.3mm^2 due to the photonic components. Measurements with a 240mVpp electrical input data stream and for an optical input wavelength of 1540nm resulted in an extinction ratio of 3.3dB for 1mm long RF phase shifters in each modulator arm driven by driver variant one and a DC tuning voltage of 1.2V. The extinction ratio was 8.4dB at a DC tuning voltage of 7V for a device with 2mm long RF phase shifters and driver

  17. Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu; Garris, Rebekah L.; Alam, Muhammad Ashraful; Deline, Chris; Kurtz, Sarah

    2015-09-02

    Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature and current density compared to masks covering entire cells.

  18. Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu; Garris, Rebekah L.; Alam, Muhammad Ashraful; Deline, Chris; Kurtz, Sarah

    2015-06-14

    Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature and current density compared to masks covering entire cells.

  19. Monolithically Integrated Ge-on-Si Active Photonics

    OpenAIRE

    Jifeng Liu

    2014-01-01

    Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In this paper, we present a review of the recent progress in Ge-on...

  20. Hybrid and monolithic integration of planar lightwave circuits (PLCs)

    Science.gov (United States)

    Chen, Ray T.

    2008-02-01

    In this paper, we review the status of monolithic and hybrid integration of planar lightwave circuits (PLCs). Building blocks needed for system integration based on polymeric materials, III-V semiconductor materials, LiNbO 3 and SOI on Silicon are summarized with pros and cons. Due to the maturity of silicon CMOS technology, silicon becomes the platform of choice for optical application specific integrated circuits (OASICs). However, the indirect bandgap of silicon makes the formation of electrically pumped silicon laser a remote plausibility which requires hybrid integration of laser sources made out of III-V compound semicouductor.

  1. Affinity Monolith-Integrated Microchips for Protein Purification and Concentration.

    Science.gov (United States)

    Gao, Changlu; Sun, Xiuhua; Wang, Huaixin; Qiao, Wei; Hu, Bo

    2016-01-01

    Affinity chromatography is a valuable method to purify and concentrate minute amount of proteins. Monoliths with epoxy groups for affinity immobilization were prepared by direct in-situ photopolymerization of glycidyl methacrylate and ethylene glycol dimethacrylate in porogenic solvents consisting of 1-dodecanol and cyclohexanol. By integrating affinity monoliths onto a microfluidic system, targeted biomolecules can be captured and retained on affinity column, while other biomolecules having no specific interactions toward the immobilized ligands flow through the microchannel. Therefore, proteins which remain on the affinity column are purified and concentrated, and then eluted by appropriate solutions and finally, separated by microchip capillary electrophoresis. This integrated microfluidic device has been applied to the purification and separation of specific proteins (FITC-labeled human serum albumin and IgG) in a mixture.

  2. Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion

    Science.gov (United States)

    Wilt, David; Wehrer, Rebecca; Palmisiano, Marc; Wanlass, Mark; Murray, Christopher

    2003-05-01

    Monolithic interconnected modules (MIMs) are under development for thermophotovoltaic (TPV) energy conversion applications. MIM devices are typified by series-interconnected photovoltaic cells on a common, semi-insulating substrate and generally include rear-surface infrared (IR) reflectors. The MIM architecture is being implemented in InGaAsSb materials without semi-insulating substrates through the development of alternative isolation methodologies. Motivations for developing the MIM structure include: reduced resistive losses, higher output power density than for systems utilizing front surface spectral control, improved thermal coupling and ultimately higher system efficiency. Numerous design and material changes have been investigated since the introduction of the MIM concept in 1994. These developments as well as the current design strategies are addressed.

  3. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow.

    Science.gov (United States)

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-12-15

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system.

  4. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

  5. Monolithic integrated optic fiber Bragg grating sensor interrogator

    Science.gov (United States)

    Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Songjian

    2010-04-01

    Fiber Bragg gratings (FBGs) are a mature sensing technology that has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. Fiber Bragg grating sensors can be use for a variety of measurements including strain, stress, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion distributed at multiple locations within the structure using a single fiber element. The most prominent advantages of FBGs are: small size and light weight, multiple FBG transducers on a single fiber, and immunity to radio frequency interference. A major disadvantage of FBG technology is that conventional state-of-the-art fiber Bragg grating interrogation systems are typically bulky, heavy, and costly bench top instruments that are assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the need for a compact FBG interrogation system, this paper describes recent progress towards the development of a miniature fiber Bragg grating sensor interrogator (FBG-TransceiverTM) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables the monolithic integration of all of the functionalities, both passive and active, of conventional bench top FBG sensor interrogators systems, packaged in a miniaturized, low power operation, 2-cm x 5-cm small form factor (SFF) package suitable for the long-term structural health monitoring in applications where size, weight, and power are critical for operation.

  6. A monolithically integrated torsional CMOS-MEMS relay

    Science.gov (United States)

    Riverola, M.; Sobreviela, G.; Torres, F.; Uranga, A.; Barniol, N.

    2016-11-01

    We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the k Ω -range throughout the on-off cycling test.

  7. Design and Fabrication of a Monolithic Optoelectronic Integrated Circuit Chip Based on CMOS Compatible Technology

    Institute of Scientific and Technical Information of China (English)

    GUO Wei-Feng; ZHAO Yong; WANG Wan-Jun; SHAO Hai-Feng; YANG Jian-Yi; JIANG Xiao-Qing

    2012-01-01

    A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology.The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function.Test results show that the extinction ratio of the MZM is close to 20dB and the small-signal gain of the CMOS driving circuit is about 26.9dB.A 50m V 10 MHz sine wave signal is amplified by the driving circuit,and then drives the MZM successfully.%A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9dB. A 50mV 10MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.

  8. Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

    Science.gov (United States)

    Aimez, V.; Beauvais, J.; Beerens, J.; Ng, S. L.; Ooi, B. S.

    2001-11-01

    In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

  9. Monolithically integrated Helmholtz coils by 3-dimensional printing

    Energy Technology Data Exchange (ETDEWEB)

    Li, Longguang [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Abedini-Nassab, Roozbeh; Yellen, Benjamin B., E-mail: yellen@duke.edu [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Department of Mechanical Engineering and Materials Science, Duke University, P.O. Box 90300, Hudson Hall, Durham, North Carolina 27708 (United States)

    2014-06-23

    3D printing technology is of great interest for the monolithic fabrication of integrated systems; however, it is a challenge to introduce metallic components into 3D printed molds to enable broader device functionality. Here, we develop a technique for constructing a multi-axial Helmholtz coil by injecting a eutectic liquid metal Gallium Indium alloy (EGaIn) into helically shaped orthogonal cavities constructed in a 3D printed block. The tri-axial solenoids each carry up to 3.6 A of electrical current and produce magnetic field up to 70 G. Within the central section of the coil, the field variation is less than 1% and is in agreement with theory. The flow rates and critical pressures required to fill the 3D cavities with liquid metal also agree with theoretical predictions and provide scaling trends for filling the 3D printed parts. These monolithically integrated solenoids may find future applications in electronic cell culture platforms, atomic traps, and miniaturized chemical analysis systems based on nuclear magnetic resonance.

  10. Wideband monolithically integrated front-end subsystems and components

    Science.gov (United States)

    Mruk, Joseph Rene

    This thesis presents the analysis, design, and measurements of passive, monolithically integrated, wideband recta-coax and printed circuit board front-end components. Monolithic fabrication of antennas, impedance transformers, filters, and transitions lowers manufacturing costs by reducing assembly time and enhances performance by removing connectors and cabling between the devices. Computational design, fabrication, and measurements are used to demonstrate the capabilities of these front-end assemblies. Two-arm wideband planar log-periodic antennas fed using a horizontal feed that allows for filters and impedance transformers to be readily fabricated within the radiating region of the antenna are demonstrated. At microwave frequencies, low-cost printed circuit board processes are typically used to produce planar devices. A 1.8 to 11 GHz two-arm planar log-periodic antenna is designed with a monolithically integrated impedance transformer. Band rejection methods based on modifying the antenna aperture, use of an integrated filter, and the application of both methods are investigated with realized gain suppressions of over 25 dB achieved. The ability of standard circuit board technology to fabricate millimeter-wave devices up to 110 GHz is severely limited. Thin dielectrics are required to prevent the excitation of higher order modes in the microstrip substrate. Fabricating the thin line widths required for the antenna aperture also becomes prohibitively challenging. Surface micro-machining typically used in the fabrication of MEMS devices is capable of producing the extremely small features that can be used to fabricate antennas extending through W-band. A directly RF fed 18 to 110 GHz planar log-periodic antenna is developed. The antenna is fabricated with an integrated impedance transformer and additional transitions for measurement characterization. Singly terminated low-loss wideband millimeter-wave filters operating over V- and W- band are developed. High

  11. Multiport InP monolithically integrated all-optical wavelength router.

    Science.gov (United States)

    Zheng, Xiu; Raz, Oded; Calabretta, Nicola; Zhao, Dan; Lu, Rongguo; Liu, Yong

    2016-08-15

    An indium phosphide-based monolithically integrated wavelength router is demonstrated in this Letter. The wavelength router has four input ports and four output ports, which integrate four wavelength converters and a 4×4 arrayed-waveguide grating router. Each wavelength converter is achieved based on cross-gain modulation and cross-phase modulation effects in a semiconductor optical amplifier. Error-free wavelength switching for a non-return-to-zero 231-1 ps eudorandom binary sequence at 40 Gb/s data rate is performed. Both 1×4 and 3×1 all-optical routing functions of this chip are demonstrated for the first time with power penalties as low as 3.2 dB.

  12. 20 Gbit/s transmission experiments using an integrated MQW modulator/DFB laser module

    Science.gov (United States)

    Kataoka, T.; Miyamoto, Y.; Hagimoto, K.; Sato, K.; Kotaka, I.; Wakita, K.

    1994-05-01

    An integrated MQW electroabsorption modulator/DFB laser module that operates at 2V was developed. It offers a 22dB extinction ratio and 15GHz bandwidth. 100km transmission experiments at 20 Gbit/s are carried out using a prototype module. To the best of the authors' knowledge, this is the first report where 20 Gbit/s transmission has been achieved with a monolithically integrated light source.

  13. Synthesis of monolithic graphene – graphite integrated electronics

    Science.gov (United States)

    Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M.

    2013-01-01

    Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems1 with functions defined by synthesis2-6. Graphene7-12 has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication13-20. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically-integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous catalyst metals permits the selective growth of graphene and graphite, with controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from synthesis. These functional, all-carbon structures were transferrable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing, and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent a substantial progress towards encoding electronic functionality via chemical synthesis and suggest future promise for one-step integration of graphene-graphite based electronics. PMID:22101813

  14. Synthesis of monolithic graphene-graphite integrated electronics.

    Science.gov (United States)

    Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M

    2011-11-20

    Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems with functions defined by synthesis. Graphene has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous metal catalysts permits the selective growth of graphene and graphite, with a controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from the synthesis. These functional, all-carbon structures were transferable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent substantial progress towards encoding electronic functionality through chemical synthesis and suggest the future promise of one-step integration of graphene-graphite based electronics.

  15. Analysis of monolithic integrated master oscillator power amplifiers

    Science.gov (United States)

    Mehuys, David; Welch, David F.; Waarts, Robert G.; Parke, Ross; Hardy, Amos; Streifer, William

    1991-07-01

    An analysis of a novel, monolithic integrated master oscillator power amplifier (M-MOPA) is presented. The M-MOPA consists of a DBR master oscillator which injects power into a linear chain of amplifiers and detuned second-order grating output couplers. The analysis self-consistently includes amplified spontaneous emission buildup and residual reflections throughout the amplifier stages. It predicts that output powers in excess of 1 W can be expected from a single-lateral-mode waveguide multistage amplifier less than 1 cm in length, injected with less than 15 mW of input power. In addition to the signal gain of more than 25 dB, the signal-to-noise ratio at 1-W output exceeds 15 dB. Because of the small reflections associated with the grating output couplers, and gain saturation by the injected signal, the amplifier self-oscillation threshold is suppressed to current densities above 15 kA/sq cm.

  16. Monolithic microwave integrated circuit devices for active array antennas

    Science.gov (United States)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  17. Towards monolithic integration of germanium light sources on silicon chips

    Science.gov (United States)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  18. A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission

    Science.gov (United States)

    Zhang, Zhang; Ye, Tan; Jianmin, Zeng; Xu, Han; Xin, Cheng; Guangjun, Xie

    2016-09-01

    A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission is presented. Data and power are transmitted to the stimulator by mutual inductance coupling, while the in-vitro controller encodes the stimulation parameters. The stimulator integrates the digital control module and can generate the bipolar current with equal amplitude in four channels. In order to reduce power consumption, a novel controlled threshold voltage cancellation rectifier is proposed in this paper to provide the supply voltage of the stimulator. The monolithic stimulator was fabricated in a SMIC 0.18 μm 1-poly 6-metal mixed-signal CMOS process, occupying 0.23 mm2, and consumes 180 μW on average. Compared with previously published stimulators, this design has advantages of large stimulated current (0-0.8 mA) with the double low-voltage supply (1.8 and 3.3 V), and high-level integration. Project supported by the National Natural Science Foundation of China (Nos. 61404043, 61401137), the Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Nos. IIMDKFJJ-13-06, IIMDKFJJ-14-03), and the Fundamental Research Funds for the Central Universities (No. 2015HGZX0026).

  19. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.

    1991-01-01

    InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

  20. Compatibility study towards monolithic self-charging power unit based on all-solid thin-film solar module and battery

    Science.gov (United States)

    Sandbaumhüter, Florian; Agbo, Solomon N.; Tsai, Chih-Long; Astakhov, Oleksandr; Uhlenbruck, Sven; Rau, Uwe; Merdzhanova, Tsvetelina

    2017-10-01

    Aiming at the development of a monolithic integrated all-solid-state self-rechargeable power unit, we perform a V-I characteristics compatibility study for the integration of such a device having a thin-film silicon multi-junction photovoltaic (PV) module and a thin-film solid Li//lithium phosphorus oxynitride//LiCoO2 battery. The battery and PV module are connected to mimic a monolithic module-to-storage cell device and the performance of this device in various temperature conditions has been tested. Few issues regarding the matching of the battery and PV module characteristics are identified for improvement. The concept of the integrated all-solid-state PV-battery solution appears viable especially in three-terminal device configuration.

  1. EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

    Science.gov (United States)

    Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei

    2017-06-01

    We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.

  2. Monolithically integrated AlN/GaN electronics for harsh environments Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a...

  3. An Integrated Teaching Module.

    Science.gov (United States)

    Samuel, Marie R.; Seiferth, Berniece B.

    This integrated teaching module provides elementary and junior high school teachers with a "hands-on" approach to studying the Anasazi Indian. Emphasis is on creative exploration that focuses on integrating art, music, poetry, writing, geography, dance, history, anthropology, sociology, and archaeology. Replicas of artifacts,…

  4. Automation of the Technological Process to Produce Building Frame-Monolithic Modules Based on Fluoranhydrite

    Science.gov (United States)

    Fedorchuk, J.; Sadenova, M.; Rusina, O.

    2016-01-01

    The paper first proposes the automation of the technological process to produce building frame-monolithic modules from production wastes, namely technogenic anhydrite and fluoranhydrite. A functional diagram of the process automation is developed, the devices to perform control and maintenance with account of the production characteristics are chosen.

  5. Advanced digital modulation: Communication techniques and monolithic GaAs technology

    Science.gov (United States)

    Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

    1983-01-01

    Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

  6. Monolithically mode division multiplexing photonic integrated circuit for large-capacity optical interconnection.

    Science.gov (United States)

    Chen, Guanyu; Yu, Yu; Zhang, Xinliang

    2016-08-01

    We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.

  7. A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

    CERN Document Server

    Xiong, Chi; Proesel, Jonathan E; Orcutt, Jason S; Haensch, Wilfried; Green, William M J

    2016-01-01

    Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimizatio...

  8. Monolithic Microwave Integrated Circuit (MMIC) Phased Array Demonstrated With ACTS

    Science.gov (United States)

    1996-01-01

    Monolithic Microwave Integrated Circuit (MMIC) arrays developed by the NASA Lewis Research Center and the Air Force Rome Laboratory were demonstrated in aeronautical terminals and in mobile or fixed Earth terminals linked with NASA's Advanced Communications Technology Satellite (ACTS). Four K/Ka-band experimental arrays were demonstrated between May 1994 and May 1995. Each array had GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The 30-GHz transmit array used in uplinks to ACTS was developed by Lewis and Texas Instruments. The three 20-GHz receive arrays used in downlinks from ACTS were developed in cooperation with the Air Force Rome Laboratory, taking advantage of existing Air Force integrated-circuit, active-phased-array development contracts with the Boeing Company and Lockheed Martin Corporation. Four demonstrations, each related to an application of high interest to both commercial and Department of Defense organizations, were conducted. The location, type of link, and the data rate achieved for each of the applications is shown. In one demonstration-- an aeronautical terminal experiment called AERO-X--a duplex voice link between an aeronautical terminal on the Lewis Learjet and ACTS was achieved. Two others demonstrated duplex voice links (and in one case, interactive video links as well) between ACTS and an Army high-mobility, multipurpose wheeled vehicle (HMMWV, or "humvee"). In the fourth demonstration, the array was on a fixed mount and was electronically steered toward ACTS. Lewis served as project manager for all demonstrations and as overall system integrator. Lewis engineers developed the array system including a controller for open-loop tracking of ACTS during flight and HMMWV motion, as well as a laptop data display and recording system used in all demonstrations. The Jet Propulsion Laboratory supported the AERO-X program, providing elements of the ACTS Mobile Terminal. The successful

  9. A monolithic integrated micro direct methanol fuel cell based on sulfo functionalized porous silicon

    Science.gov (United States)

    Wang, M.; Lu, Y. X.; Liu, L. T.; Wang, X. H.

    2016-11-01

    In this paper, we demonstrate a monolithic integrated micro direct methanol fuel cell (μDMFC) for the first time. The monolithic integrated μDMFC combines proton exchange membrane (PEM) and Pt nanocatalysts, in which PEM is achieved by the functionalized porous silicon membrane and 3D Pt nanoflowers being synthesized in situ on it as catalysts. Sulfo groups functionalized porous silicon membrane serves as a PEM and a catalyst support simultaneously. The μDMFC prototype achieves an open circuit voltage of 0.3 V, a maximum power density of 5.5 mW/cm2. The monolithic integrated μDMFC offers several desirable features such as compatibility with micro fabrication techniques, an undeformable solid PEM and the convenience of assembly.

  10. High pressure-resistant SU-8 microchannels for monolithic porous structure integration

    Science.gov (United States)

    Carlier, Julien; Chuda, Katarzyna; Arscott, Steve; Thomy, Vincent; Verbeke, Bernard; Coqueret, Xavier; Camart, Jean Christophe; Druon, Christian; Tabourier, Pierre

    2006-10-01

    Integrated lab-on-chip (LOC) microsystems dedicated to proteomic analysis require specific pretreatment steps such as protein trypsic digestion, concentration, desalting or separation of biological samples. These steps can be achieved thanks to porous monolithic polymers. This paper deals with the integration of such a polymer into SU-8 microchannels by using a multi-material technology (SU-8, Pyrex and silicon). A solution for the fabrication of complete polymer microchannels which are high pressure- and solvents-resistant is proposed. This technique uses the negative photoresist SU-8 which is compatible with the protein analysis performed here. Our process requires a novel technological step using a silane coupling agent. This modification of the SU-8/Pyrex interface leads to the fabrication of a 100 µm × 160 µm section microchannel (length of 3 cm), closed with a Pyrex® lid by SU-8 bonding resistant to 80 bar. An improvement of the SU-8/monolithic structure is also demonstrated thanks to a specific treatment of the polymer enabling good anchoring of the monolith in the microchannels, and the pressure-resistance tests were also achieved with the monolithic structure integrated in the microchannels. A digestion step of a protein sample of benzoylarginine ethyl ester in a SU-8 microchannel was achieved after the functionalization of a monolith anchored in the microchannel. Analysis by UV/VIS spectroscopy of this in situ digestion has been reported.

  11. A novel design for monolithic interconnected modules (MIMs) for thermophotovoltaic (TPV) power conversion

    Energy Technology Data Exchange (ETDEWEB)

    Ward, J.S.; Duda, A.; Wanlass, M.W. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1997-06-01

    The design for the fabrication of Monolithic Interconnected Modules (MIMs) for thermophotovoltaic (TPV) power conversion described in this paper utilizes a novel, interdigitated contacting scheme that increases the flexibility in the size of the component cells and hence the output current and voltage of the module. This flexibility is gained at the expense of only minimally increased grid obscuration. Because the design uses the grid fingers of the component cells as the interconnect structure, the area of the device used for this purpose becomes negligible. In this paper the authors report on the specifics of the design as well as issues related to the fabrication of the modules. Preliminary performance data for representative modules also are offered.

  12. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  13. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  14. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor

    NARCIS (Netherlands)

    Pagkali, Varvara; Petrou, Panagiota S.; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E.

    2016-01-01

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm2

  15. Monolithic integration of DUV-induced waveguides into plastic microfluidic chip for optical manipulation

    DEFF Research Database (Denmark)

    Khoury Arvelo, Maria; Vannahme, Christoph; Sørensen, Kristian Tølbøl

    2014-01-01

    A monolithic polymer optofluidic chip for manipulation of microbeads in flow is demonstrated. On this chip, polymer waveguides induced by Deep UV lithography are integrated with microfluidic channels. The optical propagation losses of the waveguides are measured to be 0.66±0.13 d...

  16. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor

    NARCIS (Netherlands)

    Pagkali, Varvara; Petrou, Panagiota S.; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E.

    2017-01-01

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm2

  17. Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

    DEFF Research Database (Denmark)

    Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

    2010-01-01

    The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon av...

  18. Integrated on-chip mass spectrometry reaction monitoring in microfluidic devices containing porous polymer monolithic columns.

    Science.gov (United States)

    Dietze, C; Schulze, S; Ohla, S; Gilmore, K; Seeberger, P H; Belder, D

    2016-09-21

    Chip-based microfluidics enable the seamless integration of different functions into single devices. Here, we present microfluidic chips containing porous polymer monolithic columns as a means to facilitate chemical transformations as well as both downstream chromatographic separation and mass spectrometric analysis. Rapid liquid phase lithography prototyping creates the multifunctional device economically.

  19. Monolithic ionizing particle detector based on active matrix of functionally integrated structures

    Energy Technology Data Exchange (ETDEWEB)

    Murashev, V.N. [National University of Science and Technology “MISIS” (Russian Federation); Legotin, S.A., E-mail: serlego@mail.ru [National University of Science and Technology “MISIS” (Russian Federation); Karmanov, D.E. [Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics (MSU SINP) (Russian Federation); Baryshnikov, F.M.; Didenko, S.I. [National University of Science and Technology “MISIS” (Russian Federation)

    2014-02-15

    Highlights: • A new type of monolithic silicon position detector is presented. • An operating principle, design and technology of the detector are described. • Calculated estimations of the detecting efficiency are carried out. • Experimental results of alpha-particle and electron detection are shown. -- Abstract: An operating principle, design and technology of a new type of the monolithic silicon position detector (MSPD) for registration of ionizing particles and photons are described. The detector represents a specialized monolithic silicon VLSI that contains a two-dimensional detecting matrix of active functionally integrated bipolar structures and peripheral electronic circuitry for signal amplification and processing. This paper presents experimental results of α-particles and electrons detection with position accuracy and operation speed better than 12.5 μm and 1 ns, respectively. The given estimations show the capabilities of this detector and its advantages in comparison with analogs.

  20. Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

    Science.gov (United States)

    Raring, James W.

    The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high

  1. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

    Science.gov (United States)

    Agazzi, Laura; Bradley, Jonathan D B; Dijkstra, Meindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus

    2010-12-20

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

  2. Monolithic photonic integration of suspended light emitting diode, waveguide and photodetector

    CERN Document Server

    Wang, Yongjin; Gao, Xumin; Cai, Wei; Xu, Yin; Yuan, Jialei; Zhu, Guixia; Yang, Yongchao; Cao, Xun; Zhu, Hongbo; Gruenberg, Peter

    2015-01-01

    We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the on-chip optical interconnects. This work paves the way towards novel active electro-optical sensing system and planar optical communication in the visible range.

  3. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Science.gov (United States)

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  4. Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

    Directory of Open Access Journals (Sweden)

    S.A. Legotin

    2014-07-01

    Full Text Available This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of α-particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered.

  5. Damage in Monolithic Thin-Film Photovoltaic Modules Due to Partial Shade

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Mansfield, Lorelle; Repins, Ingrid; Kurtz, Sarah

    2016-09-01

    The typical configuration of monolithic thin-film photovoltaic modules makes it possible for partial shade to place one or more cells in such a module in reverse bias. Reverse bias operation leads to high voltage, current density, and power density conditions, which can act as driving forces for failure. We showed that a brief outdoor shadow event can cause a 7% permanent loss in power. We applied an indoor partial shade durability test that moves beyond the standard hot spot endurance test by using more realistic mask and bias conditions and by carefully quantifying the permanent change in performance due to the stress. With the addition of a pass criterion based on change in maximum power, this procedure will soon be proposed as a part of the module-type qualification test. All six commercial copper indium gallium diselenide and cadmium telluride modules we tested experienced permanent damage due to the indoor partial shade test, ranging from 4% to 14% loss in maximum power. We conclude by summarizing ways to mitigate partial shade stress at the cell, module, and system levels.

  6. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    Science.gov (United States)

    Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

    1991-01-01

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

  7. Technology challenges for monolithically integrated waveguide demultiplexers Invited Paper

    Institute of Scientific and Technical Information of China (English)

    Lech Wosinski; Liu Liu; Ning Zhu; Lars Thylen

    2009-01-01

    A short overview of integrated waveguide demultiplexers for different applications in future highly inte- grated optical communication systems is presented. Some fabricated devices based on amorphous silicon nanowire technology are described.

  8. Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

    KAUST Repository

    Shen, Chao

    2015-10-04

    In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.

  9. Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

    Science.gov (United States)

    Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

    2017-07-01

    Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

  10. Efficient regenerative wavelength conversion at 10Gbit/s over C- and L-band (80nm span) using a Mach-Zehnder interferometer with monolithically integrated semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Dülk, M.; Fischer, St.; Gamper, E.;

    2000-01-01

    A demonstration is presented of 10Gbit/s 2R regenerative wavelength up- and down-conversion within the C-band as well as up-conversion to the L-band using a monolithically integrated Mach-Zehnder interferometer module with semiconductor optical amplifiers (MZI-SOAs). The converted output signals ...

  11. Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique

    Science.gov (United States)

    Tanbun-Ek, T.; Chen, Y. K.; Grenko, J. A.; Byrne, E. K.; Johnson, J. E.; Logan, R. A.; Tate, A.; Sergent, A. M.; Wecht, K. W.; Sciortine, P. F.; Chu, S. N. G.

    1994-12-01

    A device quality of selective epitaxy growth of InGaAsP/InP multiple quantum well (MQW) structure using low-pressure metalorganic vapor phase epitaxy (MOVPE) technique is described. The technique is applied to a monolithically integrated electroabsorption modulator with distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers. Superior device characteristics such as efficient modulation, low threshold current and high efficiency operation of the integrated devices are obtained.

  12. Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry

    Directory of Open Access Journals (Sweden)

    Gabriel Vidal-Álvarez

    2016-03-01

    Full Text Available We present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel. The suspended microbridge resonator is electrostatically actuated, capacitively sensed, and monolithically integrated with complementary metal-oxide-semiconductor (CMOS readout circuitry. The device is fabricated using the back end of line (BEOL layers of the AMS 0.35 μm commercial CMOS technology, interconnecting two metal layers with a contact layer. The fabricated device has a 6 fL capacity and has one of the smallest embedded channels so far. It is able to attain a mass sensitivity of 25 ag/Hz using a fully integrable electrical transduction.

  13. Monolithically Integrated Reconfigurable Filters for Microwave Photonic Links

    Science.gov (United States)

    Norberg, Erik J.

    For the purposes of commercial communication and military electronic warfare and radar alike, there is an increasing interest in RF systems that can handle very wide instantaneous bandwidths at high center frequencies. Optical signal processing has the capability to reduce latency, improve size, weight and power (SwAP) performance, and overcome the inherent bandwidth limitations of electronic counterparts. By rapidly pre-filtering wide bandwidth microwave signals in the optical domain, the analog-to-digital conversion (ADC) and subsequent digital signal processing (DSP) can be significantly relieved. Compared to channelizing and add/drop filters for wavelength division multiplexing (WDM) applications, the microwave filter application is much more challenging as it requires a more versatile filter, ideally with tunability in both frequency and bandwidth. In this work such a filter was developed using integrated photonics. By integrating the filter on a single InP chip, the stability required for coherent filtering is met, while the active integration platform offers a flexible filter design and higher tolerance in the coupler and fabrication specifications. Using an entirely deep etched fabrication with a single blanket regrowth, a simple fabrication with high yield is achieved. The reconfigurable filter is designed as an array of uncoupled filter stages with each filter stage reconfigurable as a filter pole or zero with arbitrary magnitude and phase. This gives rise to a flexible ffilter synthesis, much like an optical version of DSP filters. Flat-topped bandpass filters are demonstrated with frequency tunability over 30 GHz, bandwidth adjustable between 1.9 and 5.4 GHz, and stopband rejection >32 dB. In order to meet the stringent spurious-free dynamic range (SFDR) requirements of the microwave application, a novel epitaxial layer integration platform is developed. Optimized for high optical saturation power and low propagation loss, it produces semiconductor

  14. Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

    Science.gov (United States)

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

    2011-12-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

  15. Development and fabrication of monolithically integrated optical packet switches

    Science.gov (United States)

    Yanson, Dan A.; Silver, Mark; Vassalli, Omar; Campbell, Margaret; Masterton, Graeme; McDougall, Stewart D.; Marsh, John H.

    2007-02-01

    We report development activities towards realization of fully integrated 1x2, 2x2, and 4x4 cross-point optical switches for WDM-packet-based data networking. Two enabling technologies, quantum-well intermixing and etched turning mirrors, are developed and demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 μm. We describe the use of both technologies to fabricate switch chips with different port counts.

  16. High-speed integrated electroabsorption modulators

    Science.gov (United States)

    Johnson, John E.; Morton, Paul A.; Park, Yong-Kwan; Ketelsen, Leonard J. P.; Grenko, J. A.; Miller, Thomas J.; Sputz, Sharon K.; Tanbun-Ek, Tawee; Vandenberg, J. M.; Yadvish, R. D.; Fullowan, Thomas R.; Sciortino, Paul F., Jr.; Sergent, A. M.; Tsang, Won-Tien

    1997-04-01

    The explosive growth in internet, multimedia and wireless traffic in recent years is rapidly exhausting capacity in public networks worldwide, forcing network service providers to aggressively install new lines and upgrade old ones. Fortunately, technological breakthroughs in the areas of erbium-doped fiber amplifiers (EDFA's), passive wavelength demultiplexers and low chirp sources have made all-optical dense wavelength-division multiplexed (WDM) systems a cost- effective way to utilize the vast bandwidth already available in the embedded fiber plant. WDM systems offer additional operational advantages, including high ultimate capacity, bit-rate transparency, flexible growth strategies, and the potential to use all-optical wavelength routing in future broadband network architectures. Commercial WDM systems operating at the OC-48 (2.5 Gbit/s) line rate are now available, and OC-192 (10 Gbit/s) terminal equipment which is under development will further enhance the capacity of these systems. One of the keys to viable WDM systems is the availability of inexpensive low-chirp optical transmitters. By taking advantage of photonic integrated circuit technology, it is possible to produce monolithically integrated DFB laser/EA modulators (EML's) with low chirp, low drive voltage and high extinction ratio, in a single compact package. In this talk we discuss the operating characteristics of these devices and their relationship to WDM system performance.

  17. Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang, E-mail: oxgchen@illinois.edu [Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801 (United States)

    2015-07-20

    We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

  18. Monolithic CMOS-MEMS integration for high-g accelerometers

    Science.gov (United States)

    Narasimhan, Vinayak; Li, Holden; Tan, Chuan Seng

    2014-10-01

    This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC's SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.

  19. The role of monolithic integration in advanced laser products

    Science.gov (United States)

    Marsh, John H.

    2006-02-01

    The design and performance of single-mode high-power (>100 mW) semiconductor lasers suitable for integration into large arrays are reported. In 830 nm lasers, quantum well intermixing (QWI) has been used to increase the bandgap of the waveguide in the facet region by 120 meV, and the catastrophic optical damage threshold of uncoated devices increased by a factor of >3 as a result. The passive waveguides are relatively cool, bringing high reliability, improving the single-mode waveguide stability and enabling high-temperature operation. Furthermore, the passive waveguides relax the cleaving and packaging alignment tolerances, giving a high yield process suitable for manufacture. A far-field reduction layer is included in the lasers giving a fast axis divergence of <20° FWHM. Arrays in which each emitter operates at several 100 mW, have excellent uniformity of laser parameters such as kink power, operating power and optical beam profile.

  20. Femtosecond laser fabrication of monolithically integrated microfluidic sensors in glass.

    Science.gov (United States)

    He, Fei; Liao, Yang; Lin, Jintian; Song, Jiangxin; Qiao, Lingling; Cheng, Ya; Sugioka, Koji

    2014-10-17

    Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D) structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  1. Femtosecond Laser Fabrication of Monolithically Integrated Microfluidic Sensors in Glass

    Directory of Open Access Journals (Sweden)

    Fei He

    2014-10-01

    Full Text Available Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  2. Multi-channel monolithic integrated optic fiber Bragg grating sensor interrogator

    Science.gov (United States)

    Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Zongjian

    2011-09-01

    Fiber Bragg grating (FBG) is a mature sensing technology for the measurement of strain, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion. It has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. The most prominent advantages of FBG are: small size and light weight, distributed array of FBG transducers on a single fiber, and immunity to radio frequency interference. However, a major disadvantage of FBG technology is that conventional state-of-the-art FBG interrogation system is typically bulky, heavy, and costly bench top instruments that are typically assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the industrial need for a compact FBG interrogation system, this paper describes recent progress towards the development of miniature fiber Bragg grating sensor interrogator (FBG-Transceiver™) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables monolithic integration of all functionalities, both passive and active, of conventional bench top FBG sensor interrogator system, packaged in a miniaturized, low power operation, 2 cm×5 cm small form factor (SFF) package suitable for long-term structural health monitoring in applications where size, weight, and power are critical for operation.

  3. Monolithically integrated heterodyne optical phase-lock loop with RF XOR phase detector.

    Science.gov (United States)

    Steed, Robert J; Pozzi, Francesca; Fice, Martyn J; Renaud, Cyril C; Rogers, David C; Lealman, Ian F; Moodie, David G; Cannard, Paul J; Lynch, Colm; Johnston, Lilianne; Robertson, Michael J; Cronin, Richard; Pavlovic, Leon; Naglic, Luka; Vidmar, Matjaz; Seeds, Alwyn J

    2011-10-10

    We present results for an heterodyne optical phase-lock loop (OPLL), monolithically integrated on InP with external phase detector and loop filter, which phase locks the integrated laser to an external source, for offset frequencies tuneable between 0.6 GHz and 6.1 GHz. The integrated semiconductor laser emits at 1553 nm with 1.1 MHz linewidth, while the external laser has a linewidth less than 150 kHz. To achieve high quality phase locking with lasers of these linewidths, the loop delay has been made less than 1.8 ns. Monolithic integration reduces the optical path delay between the laser and photodiode to less than 20 ps. The electronic part of the OPLL was implemented using a custom-designed feedback circuit with a propagation delay of ~1 ns and an open-loop bandwidth greater than 1 GHz. The heterodyne signal between the locked slave laser and master laser has phase noise below -90 dBc/Hz for frequency offsets greater than 20 kHz and a phase error variance in 10 GHz bandwidth of 0.04 rad2.

  4. A Monolithically Integrated 12V/5V Switch-Capacitor DC-DC Converter

    Institute of Scientific and Technical Information of China (English)

    耿莉; 陈治明; 刘先锋

    2000-01-01

    A monolithically integrated 12V/SV switch capacitor DC-DC converter with structure-simplified main circuit and control circuit is presented. Its topological circuit and basic operating principle are discussed in detail. It is shown that elevated operating frequency, increased capacitance and reduced turn-on voltage of the diodes can make the converter's output characteristics improved. Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher. As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial-parallel capacitance is optimized for the maximum output power. The device selection and its fabrication method are presented. A feasible integration process and its corresponding layout are designed. All active devices including switching transistors and diodes are integrated together with all passive cells including capacitors and resistor on a single chip based on BiMOS process,as has been verified to be correct and practical by simulation and chip test.

  5. Design and application of multilayer monolithic microwave integrated circuit transformers

    Energy Technology Data Exchange (ETDEWEB)

    Economides, S.B

    1999-07-01

    fabricated on standard foundry processes. With careful modelling it is also feasible to integrate the two couplers into a single tri-filar transformer structure. This is a robust balun topology, which could be widely adopted. A push-pull MESFET amplifier with 8 dB gain demonstrated this at 12 GHz, using the balun chips connected to amplifier circuits. (author)

  6. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    Science.gov (United States)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-02-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  7. Two-dimensional hydrodynamic flow focusing in a microfluidic platform featuring a monolithic integrated glass micronozzle

    Science.gov (United States)

    Liu, Yifan; Shen, Yusheng; Duan, Lian; Yobas, Levent

    2016-10-01

    Two-dimensional hydrodynamic flow focusing is demonstrated through a microfluidic device featuring a monolithic integrated glass micronozzle inside a flow-focusing geometry. Such a coaxial configuration allows simple one-step focusing of a sample fluid stream, jetted from the micronozzle tip, in both in-plane and out-of-plane directions. The width of the focused filament can be precisely controlled and further scaled down to the submicrometer regime to facilitate rapid hydrodynamic mixing. Fluorescence quenching experiments reveal ultra-fast microsecond mixing of the denaturant into the focused filament. This device offers new possibilities to a set of applications such as the study of protein folding kinetics.

  8. A 1.55-μm laser array monolithically integrated with an MMI combiner

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Zhu Hongliang; Liang Song; Wang Baojun; Zhang Can; Zhao Lingjuan; Bian Jing

    2013-01-01

    The monolithic integration of four 1.55-μm range InGaAsP/InP distributed feedback lasers with a 4 × 1multimode-interference (MMI) optical combiner using the varied width ridge method is proposed and demonstrated.The average output power is 1.5 mW when the current of LD is 100 mA and the threshold current is 30-35 mA at 25 ℃.The lasing wavelength is 1.55-μm range and 40 dB sidemode suppression ratio is obtained.The four channels can operate separately or simultaneously.

  9. 2R-regeneration in a monolithically integrated four-section SOA-EA chip

    DEFF Research Database (Denmark)

    Vivero, Tania; Calabretta, Nicola; Tafur Monroy, Idelfonso

    2009-01-01

    are measured. Results show that by cascading two-pairs of SOA–EAs a steep static transfer function is achieved. Dynamical measurements show large improvements in extinction ratio as well as a large improvement in the receiver-sensitivity when used as a regenerator for NRZ signals at 10 Gb/s.......Optical regeneration using a monolithically integrated chip formed by a cascade of semiconductor optical amplifiers and saturable absorbers is investigated. Static transfer functions, signal reshaping, extinction ratio enhancement, noise dynamics and device dependence on operation conditions...

  10. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    Science.gov (United States)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-01-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  11. Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step

    OpenAIRE

    Hofstetter, Daniel; Zappe, H. P.; Epler, J. E.; van Riel, P

    2008-01-01

    The monolithic integration of a GaAs-AlGaAs distributed Bragg reflector (DBR) laser with a nonabsorbing grating section, a transparent waveguide, and an absorbing photodetector is reported. Transparent and absorbing segments were defined after growth by vacancy-enhanced quantum-well disordering (VED). Laser output power was 5 mW with a threshold current of 22 mA. Detector current was linearly dependent on the laser output power and the emission from the grating side of the laser could be dire...

  12. Monolithically Integrated, Mechanically Resilient Carbon-Based Probes for Scanning Probe Microscopy

    Science.gov (United States)

    Kaul, Anupama B.; Megerian, Krikor G.; Jennings, Andrew T.; Greer, Julia R.

    2010-01-01

    Scanning probe microscopy (SPM) is an important tool for performing measurements at the nanoscale in imaging bacteria or proteins in biology, as well as in the electronics industry. An essential element of SPM is a sharp, stable tip that possesses a small radius of curvature to enhance spatial resolution. Existing techniques for forming such tips are not ideal. High-aspect-ratio, monolithically integrated, as-grown carbon nanofibers (CNFs) have been formed that show promise for SPM applications by overcoming the limitations present in wet chemical and separate substrate etching processes.

  13. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core......, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 d...

  14. Highly efficient coupling between a monolithically integrated photonic crystal cavity and a bus waveguide

    Science.gov (United States)

    Debnath, Kapil; Welna, Karl; Ferrera, Marcello; Deasy, Kieran; Lidzey, David; Krauss, Thomas F.; O'Faolain, Liam

    2012-01-01

    We experimentally demonstrate a new optical filter design comprising of a photonic crystal cavity and a low index bus waveguide which are monolithically integrated on a silicon-on-insulator (SOI) platform. We have fabricated oxide clad PhC cavities with a silicon nitride waveguide positioned directly above, such that there is an overlap between the evanescent tails of the two modes. We have realised an extinction ratio of 7.5dB for cavities with total Q of 50,000.

  15. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  16. Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

    Institute of Scientific and Technical Information of China (English)

    Baoxia Li(李宝霞); Xiaohua Hu(胡小华); Hongliang Zhu(朱洪亮); Baojun Wang(王宝军); Lingjuan Zhao(赵玲娟); Wei Wang(王圩)

    2004-01-01

    An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.

  17. Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

    Science.gov (United States)

    Li, Baoxia; Hu, Xiaohua; Zhu, Hongliang; Wang, Baojun; Zhao, Lingjuan; Wang, Wei

    2004-04-01

    An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.

  18. Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots.

    Science.gov (United States)

    Zhang, Yang; Chen, Yan; Mietschke, Michael; Zhang, Long; Yuan, Feifei; Abel, Stefan; Hühne, Ruben; Nielsch, Kornelius; Fompeyrine, Jean; Ding, Fei; Schmidt, Oliver G

    2016-09-14

    Elastic strain fields based on single crystal piezoelectric elements represent an effective way for engineering the quantum dot (QD) emission with unrivaled precision and technological relevance. However, pioneering researches in this direction were mainly based on bulk piezoelectric substrates, which prevent the development of chip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitaxial PMN-PT thin films have been grown on SrTiO3 buffered Si and show excellent piezoelectric responses. Dense arrays of MEMS with small footprints are then fabricated based on these films, forming an on-chip strain tuning platform. After transferring the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.

  19. Investigation of Microwave Monolithic Integrated Circuit (MMIC) non-reciprocal millimeterwave components

    Science.gov (United States)

    Talisa, S. H.; Krishnaswamy, S. V.; Adam, J. D.; Yoo, K. C.; Doyle, N. J.

    1991-09-01

    Two ferrite film deposition techniques were investigated in this program for possible use in the monolithic integration of Gallium Arsenide electronic and magnetic millimeter-wave devices; (1) spin-spray plating (SSP) of nickel zinc ferrite films, and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP technique potential for this application was demonstrated. Film structural characteristics were studied, as well as their adhesions to other substrates and the conditions for growth of thicker films. Multilayers totalling 25 microns in thickness were grown on semiconducting substrates. The SSP process occurs at about 100 C and was experimentally demonstrated not to damage Gallium arsenide MMIC devices. The magnetic characteristics of these films were comparable to ceramic materials. A scheme for the monolithic integration of magnetic and Gallium arsenide electronic devices was proposed and its feasibility experimentally demonstrated. The films showed higher dielectric loss than was desirable, possibly owing to high water content. A better drying technique is required. Barium ferrite films with C-axis texture were reproducibly grown on sapphire. Magnetic measurements yielded acceptable saturation magnetization and anisotrophy field. Ferromagnetic resonance was not observed, possibly due to broad linewidths.

  20. Cantilever RF-MEMS for monolithic integration with phased array antennas on a PCB

    Science.gov (United States)

    Aguilar-Armenta, C. J.; Porter, S. J.

    2015-12-01

    This article presents the development and operation of a novel electrostatic metal-to-metal contact cantilever radio-frequency microelectromechanical system (RF-MEMS) switch for monolithic integration with microstrip phased array antennas (PAAs) on a printed circuit board. The switch is fabricated using simple photolithography techniques on a Rogers 4003c substrate, with a footprint of 200 µm × 100 µm, based on a 1 µm-thick copper cantilever. An alternative wet-etching technique for effectively releasing the cantilever is described. Electrostatic and electromagnetic measurements show that the RF-MEMS presents an actuation voltage of 90 V for metal-to-metal contact, an isolation of -8.7 dB, insertion loss of -2.5 dB and a return loss of -15 dB on a 50 Ω microstrip line at 12.5 GHz. For proof-of-concept, a beam-steering 2 × 2 microstrip PAA, based on two 1-bit phase shifters suitable for the monolithic integration of the RF-MEMS, has been designed and measured at 12.5 GHz. Measurements show that the beam-steering system presents effective radiation characteristics with scanning capabilities from broadside towards 29° in the H-plane.

  1. An implantable neural probe with monolithically integrated dielectric waveguide and recording electrodes for optogenetics applications

    Science.gov (United States)

    Wu, Fan; Stark, Eran; Im, Maesoon; Cho, Il-Joo; Yoon, Eui-Sung; Buzsáki, György; Wise, Kensall D.; Yoon, Euisik

    2013-10-01

    Objective. Optogenetics promises exciting neuroscience research by offering optical stimulation of neurons with unprecedented temporal resolution, cell-type specificity and the ability to excite as well as to silence neurons. This work provides the technical solution to deliver light to local neurons and record neural potentials, facilitating local circuit analysis and bridging the gap between optogenetics and neurophysiology research. Approach. We have designed and obtained the first in vivo validation of a neural probe with monolithically integrated electrodes and waveguide. High spatial precision enables optical excitation of targeted neurons with minimal power and recording of single-units in dense cortical and subcortical regions. Main results. The total coupling and transmission loss through the dielectric waveguide at 473 nm was 10.5 ± 1.9 dB, corresponding to an average output intensity of 9400 mW mm-2 when coupled to a 7 mW optical fiber. Spontaneous field potentials and spiking activities of multiple Channelrhodopsin-2 expressing neurons were recorded in the hippocampus CA1 region of an anesthetized rat. Blue light stimulation at intensity of 51 mW mm-2 induced robust spiking activities in the physiologically identified local populations. Significance. This minimally invasive, complete monolithic integration provides unmatched spatial precision and scalability for future optogenetics studies at deep brain regions with high neuronal density.

  2. Development of InGaAsSb Based Monolithic Interconnected Modules (MIMs)

    Science.gov (United States)

    Palmisiano, M. N.; Biefeld, R. M.; Cederberg, J. G.; Hafich, M. J.; Peake, G. M.

    2003-01-01

    The quaternary Sb-based materials are attractive for use in TPV devices due to the versatility associated with being able to grow InGaAsSb and AlGaAsSb material with a wide range of band gaps lattice matched to a GaSb substrate. Photodiodes (0.60 eV) consisting of an InGaAsSb p/n junction grown on GaSb were fabricated and characterized to establish baseline electrical performance of the material. In order to fabricate monolithic interconnected modules (MIMs) from these photodiodes using a conductive GaSb substrate, an electrical isolation layer must be added between the active layers and the substrate. For this purpose, AlGaAsSb cell isolation diodes (CIDs) were developed and characterized with respect to their ability to block current in reverse bias. These structures were combined in the first MIM structures grown and fabricated from Sb-based materials on GaSb substrates.

  3. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  4. A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver

    Science.gov (United States)

    Cui, Hailin; Zhou, Shouli; Huang, Hui; Huang, Yongqing; Ren, Xiaomin

    2005-11-01

    Adding resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver is described. Between the InP buffer and device epitaxial structure, InP/InGaAsP quarter wavelength stack (QWS) are used to form DBR (Distributed Bragg Reflectors) mirror. The PIN-PD is integrated within a Fabry-Perot cavity and the incident light is reflected many times by the Fabry-Perot cavity and consequently absorbed many times by the absorption layer. Therefore, the quantum efficiency of this detector is enlarged, meanwhile other performances such as frequency response are not influenced. We discuss the method to fabricate the resonance cavity, make theory simulation, optimize design on it, and analyze the advantage of this device.

  5. Monolithically integrated reconfigurable add-drop multiplexer for mode-division-multiplexing systems.

    Science.gov (United States)

    Wang, Shipeng; Wu, Hao; Tsang, Hon Ki; Dai, Daoxin

    2016-11-15

    An integrated reconfigurable optical add-drop multiplexer (ROADM) for mode-division-multiplexing systems is proposed and demonstrated for the first time, to the best of our knowledge. The present ROADM with four mode-channels is composed of a four-channel mode demultiplexer, four identical 2×2 thermo-optic Mach-Zehnder switches (MZSs), and a four-channel mode multiplexer, which are integrated monolithically on silicon. All the devices are designed for operation with TM polarization. The ROADM can add/drop any one of the mode channels freely by thermally turning on/off the corresponding MZS. For the added/dropped mode-channels, the excess loss is 1-5 dB, and the extinction ratio is 15-20 dB in the wavelength range of 1535-1565 nm.

  6. Monolithic integration of a quantum emitter with a compact on-chip beam-splitter

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Coles, R. J.; O' Hara, J.; Royall, B.; Fox, A. M.; Skolnick, M. S. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Clarke, E. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-06-09

    A fundamental component of an integrated quantum optical circuit is an on-chip beam-splitter operating at the single-photon level. Here, we demonstrate the monolithic integration of an on-demand quantum emitter in the form of a single self-assembled InGaAs quantum dot (QD) with a compact (>10 μm), air clad, free standing directional coupler acting as a beam-splitter for anti-bunched light. The device was tested by using single photons emitted by a QD embedded in one of the input arms of the device. We verified the single-photon nature of the QD signal by performing Hanbury Brown-Twiss measurements and demonstrated single-photon beam splitting by cross-correlating the signal from the separate output ports of the directional coupler.

  7. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  8. Monolithically integrated 4x4 SOA switch fabricated using quantum well intermixing

    Science.gov (United States)

    Millett, Ronald; Hinzer, Karin; Hall, Trevor; Poirier, Maxime; Schriemer, Henry

    2009-02-01

    Monolithically-integrated semiconductor optical amplifiers (SOAs) have the potential for enabling high-speed and low-crosstalk optical switches in reconfigurable optical add-drop multiplexers (ROADMs). Using integrated 4x4 switches as the building blocks for large-scale ROADMs, instead of 2x2 switches, will reduce alignment issues and assembly steps during manufacturing. The switch is based on SOAs, quantum well intermixed (QWI) passive 1x4 MMI splitters/combiners, and total internal reflection mirrors. We present the results of the 4x4 switch design, for a switch of 5.3 mm x 3.5 mm in size, with estimated total excess on-chip losses of 23 dB.

  9. MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Li, B. X.; Zhou, F.; Wang, B. J.; Wang, L. F.; Zhao, L. J.; Zhou, G. T.; Wang, W.

    2006-06-01

    Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s-1 nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10-10 is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated.

  10. A bit-rate flexible and power efficient all-optical demultiplexer realised by monolithically integrated Michelson interferometer

    DEFF Research Database (Denmark)

    Vaa, Michael; Mikkelsen, Benny; Jepsen, Kim Stokholm;

    1996-01-01

    A novel bit-rate flexible and very power efficient all-optical demultiplexer using differential optical control of a monolithically integrated Michelson interferometer with MQW SOAs is demonstrated at 40 to 10 Gbit/s. Gain switched DFB lasers provide ultra stable data and control signals....

  11. A monolithically integrated detector-preamplifier on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/{radical}Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

  12. Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

    DEFF Research Database (Denmark)

    Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

    2010-01-01

    scheme through a board-to-board receptacle was developed and combined with a portable customized readout and control instrument. Real-time detection of deleterious mutations in BRCA1 gene related to predisposition to hereditary breast/ovarian cancer was performed with the instrument developed using PCR......The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon...... products. Detection was based on waveguided photons elimination through interaction with fluorescently labeled PCR products. Detection of single biomolecular binding events was also demonstrated using nanoparticles as labels. In addition, label-free monitoring of bioreactions in real time was achieved...

  13. Diffraction coupled phase-locked arrays of quantum cascade lasers with monolithically integrated Talbot cavities

    CERN Document Server

    Wang, Lei; Jia, Zhi-Wei; Zhao, Yue; Liu, Chuan-Wei; Liu, Ying-Hui; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Feng-Qi; Xu, Xian-Gang

    2016-01-01

    Diffraction coupled arrays of quantum cascade laser are presented. The phase-locked behavior is achieved through monolithic integration of a Talbot cavity at one side of the laser array. The principle is based on fractional Talbot effect. By controlling length of Talbot cavity to be a quarter of Talbot distance (Zt/4), in-phase mode operation is selected. Measured far-field radiation patterns reflect stable in-phase mode operation under different injection currents, from threshold current to full power current. Diffraction-limited performance is shown from the lateral far-field, where three peaks can be obtained and main peak and side peak interval is 10.5{\\deg}. The phase-locked arrays with in-phase mode operation may be a feasible solution to get higher output power and maintain well beam quality meanwhile.

  14. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    Science.gov (United States)

    Bickford, Justin Robert

    Waferbonding is a technique that integrates different semiconductors together, in order to obtain hybrid structures that exploit the strengths of each material. Work was done at the University of California at San Diego to investigate the waferbonding of III/V compound semiconductors to silicon using a metal interface. GaAs and other III/V compound semiconductors surpass silicon in their ability to create high performance microwave devices, while silicon offers an inexpensive platform with a proven digital architecture that can interface with microwave devices and support passive components and driver circuitry. Intimate integration of the two will be required, as mixed RF/digital and optical/digital systems for communications devices such as cell phones, wi-fi, and optical communications systems are pushed smaller, faster, and to higher power. The metalbonding implementation of a proposed heterogeneous monolithic microwave integrated circuit (HMMIC) system was investigated, and was shown to extend the capabilities of existing homogeneous monolithic microwave integrated circuit (MMIC) systems. The main goals of this work were two-fold; first to implement a robust heterogeneous integration technique, and second, to show that this approach uniquely improves upon existing microwave integration technology. The metalbonding technique investigated sparsely integrated GaAs structures onto silicon, in pursuit of this HMMIC scheme. Both bottom-up and top-down fabrication methods were implemented. These approaches required the development of a myriad of meticulously designed fabrication procedures capable of avoiding the many incompatibilities between the compound semiconductor, bondmetal, and silicon materials. The bondmetal interface, provided by these techniques, broadens the scope of existing monolithic microwave integrated circuit technology design possibilities. Essential bond interface properties were measured to establish the performance of this heterogeneous

  15. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-03-03

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  16. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

    Science.gov (United States)

    Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2014-08-11

    We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

  17. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  18. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon.

    Science.gov (United States)

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-04-04

    Microchannel plates are vacuum-based electron multipliers for particle--in particular, photon--detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80-120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200 °C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

  19. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

    Science.gov (United States)

    Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

    2016-08-01

    In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

  20. Regrowth-free integration of injection locked slotted laser with an electroabsorption modulator.

    Science.gov (United States)

    Kelly, Niall P; Caro, Ludovic; Dernaika, Mohamad; Peters, Frank H

    2017-02-20

    Optical injection locking was used to red shift an integrated semiconductor laser up to 30 nm away from the main free running lasing mode. This injection locking of the laser beyond its band edge enabled its integration with an electroabsorption modulator to produce a 2.5 Gb/s eye diagram. The electroabsorption modulator was shown to have a 3 dB bandwidth of 5.5 GHz, which was limited by the contact capacitance. This paper demonstrates that such devices could be applied in a regrowth free, monolithic coherent wavelength division multiplexing transmitter.

  1. Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.

    Science.gov (United States)

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi

    2013-07-01

    We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

  2. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    Science.gov (United States)

    Leonard, Regis F.; Bhasin, Kul B.

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure. (For individual items see A93-25777 to A93-25814)

  3. Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission.

    Science.gov (United States)

    Larrue, Alexandre; Wilhelm, Christophe; Vest, Gwenaelle; Combrié, Sylvain; de Rossi, Alfredo; Soci, Cesare

    2012-03-26

    A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

  4. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Science.gov (United States)

    Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

    2017-02-01

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

  5. Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

    Science.gov (United States)

    Morales, J. S. D.; Gandan, S.; Ren, D.; Ochalski, Tomasz J.; Huffaker, Diana L.

    2017-02-01

    In this work, we study the optical properties and emission dynamics of the novel nanostructure p-GaAs nanopillars (NPs) on Si. The integration of III-V optoelectronics on Si substrates is essential for next-generation high-speed communications. NPs on Si are good candidates as gain media in monolithically integrated small-scale lasers on silicon. In order to develop this technology, an in-depth knowledge of the NP structure is necessary to resolve its optimal optical properties. The optical characterization which has been carried out consists of the emission analysis for different NP geometries. We measured NPs with different combinations of pitch (of the order of a few μm) and diameter (of the order of tens of nm). A comparison of intensities for the various NPs provides us with the most efficient geometry. The quality of the crystal grown has been studied from temperature-dependent photoluminescence (PL). A red shift and a significant reduction of the intensity of the NP emission are observed with an increase in temperature. The results also show the presence of two non-radiative recombination channels when the intensity peaks at different temperatures are analyzed with the activation energy function.

  6. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Science.gov (United States)

    Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

    2017-01-01

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit. PMID:28195239

  7. Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

    Institute of Scientific and Technical Information of China (English)

    Liao Zai-Yi; Yang Hua; Wang Wei

    2008-01-01

    This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

  8. CLASSICAL AREAS OF PHENOMENOLOGY: Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

    Science.gov (United States)

    Liao, Zai-Yi; Yang, Hua; Wang, Wei

    2008-07-01

    This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

  9. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    Science.gov (United States)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  10. A monolithically integrated dual-mode laser for photonic microwave generation and all-optical clock recovery

    Science.gov (United States)

    Yu, Liqiang; Zhou, Daibing; Zhao, Lingjuan

    2014-09-01

    We demonstrate a monolithically integrated dual-mode laser (DML) with narrow-beat-linewidth and wide-beat-tunability. Using a monolithic DFB laser subjected to amplified feedback, photonic microwave generation of up to 45 GHz is obtained with higher than 15 GHz beat frequency tunability. Thanks to the high phase correlation of the two modes and the narrow mode linewidth, a RF linewidth of lower than 50 kHz is measured. Simulations are also carried out to illustrate the dual-mode beat characteristic. Furthermore, using the DML, an all-optical clock recovery for 40  Gbaud NRZ-QPSK signals is demonstrated. Timing jitter of lower than 363 fs (integrated within a frequency range from 100 Hz to 1 GHz) is obtained.

  11. Integration of monolithic porous polymer with droplet-based microfluidics on a chip for nano/picoliter volume sample analysis

    OpenAIRE

    Kim, Jin-Young; Chang, Soo-Ik; Andrew J deMello; O’Hare, Danny

    2014-01-01

    In this paper, a porous polymer nanostructure has been integrated with droplet-based microfluidics in a single planar format. Monolithic porous polymer (MPP) was formed selectively within a microfluidic channel. The resulting analyte bands were sequentially comartmentalised into droplets. This device reduces band broadening and the effects of post-column dead volume by the combination of the two techniques. Moreover it offers the precise control of nano/picoliter volume samples.

  12. Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure

    Science.gov (United States)

    Oh, Su Hwan; Lee, Ji-Myon; Kim, Soo; Ko, Hyunsung; Lee, Chul-Wook; Park, Sahnggi; Park, Moon-Ho

    2004-10-01

    We have demonstrated a high-power widely tunable sampled grating (SG) DBR laser integrated monolithically with optical semiconductor amplifier (SOA), using planar buried heterostructure (PBH). The measured threshold current was 5 mA on average with 60 chips randomly selected which is lowest among the typical average values. Fiber-coupled output power was 12.4 dBm and the output power variation was ˜1 dB for the whole tuning range.

  13. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  14. Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN-PT Ferroelectric Single Crystal.

    Science.gov (United States)

    Fang, Huajing; Xu, Chao; Ding, Jie; Li, Qiang; Sun, Jia-Lin; Dai, Ji-Yan; Ren, Tian-Ling; Yan, Qingfeng

    2016-12-07

    Photodetectors capable of detecting two or more bands simultaneously with a single system have attracted extensive attentions because of their critical applications in image sensing, communication, and so on. Here, we demonstrate a self-powered ultrabroadband photodetector monolithically integrated on a 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-28PT) single crystal. By combining the optothermal and pyroelectric effect, the multifunctional PMN-28PT single crystal can response to a wide wavelength range from UV to terahertz (THz). At room temperature, the photodetector could generate a pyroelectric current under the intermittent illumination of incident light in absence of external bias. A systematic study of the photoresponse was investigated. The pyroelectric current shows an almost linear relationship to illumination intensity. Benefiting from the excellent pyroelectric property of PMN-28PT single crystal and the optimized device architecture, the device exhibited a dramatic improvement in operation frequency up to 3 kHz without any obvious degradation in sensitivity. Such a self-powered photodetector with ultrabroadband response may open a window for the novel application of ferroelectric materials in optoelectronics.

  15. Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

    Science.gov (United States)

    Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

    2015-01-01

    A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

  16. Garnet-free optical circulators monolithically integrated on spatially modified III-V quantum wells

    CERN Document Server

    Aleahmad, Parinaz; Christodoulides, Demetrios; LiKamWa, Patrick

    2016-01-01

    Optical circulators are indispensable components in photonic networks that are aimed to route information in a unidirectional way among their N-ports1,2. In general, these devices rely on magneto-optical garnets3 with appreciable Verdet constants that are utilized in conjunction with other elements like permanent magnets, wave-plates, birefringent crystals and/or beam splitters. Consequently, these arrangements are typically bulky and hence not conducive to on-chip photonic integration4-6. Of interest would be to devise strategies through which miniaturized optical circulators can be monolithically fabricated on light-emitting semiconductor platforms by solely relying on physical properties that are indigenous to the material itself. By exploiting the interplay between non-Hermiticity and nonlinearity, here we demonstrate a new class of chip-scale circulators on spatially modified III-V quantum well systems. These garnet-free unidirectional structures are broadband (over 2.5 THz) at 1550 nm, effectively loss-...

  17. ATR LEU Monolithic Foil-Type Fuel with Integral Cladding Burnable Absorber – Neutronics Performance Evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Gray Chang

    2012-03-01

    The Advanced Test Reactor (ATR), currently operating in the United States, is used for material testing at very high neutron fluxes. Powered with highly enriched uranium (HEU), the ATR has a maximum thermal power rating of 250 MWth. Because of the large test volumes located in high flux areas, the ATR is an ideal candidate for assessing the feasibility of converting HEU driven reactor cores to low-enriched uranium (LEU) cores. The burnable absorber - 10B, was added in the inner and outer plates to reduce the initial excess reactivity, and to improve the peak ratio of the inner/outer heat flux. The present work investigates the LEU Monolithic foil-type fuel with 10B Integral Cladding Burnable Absorber (ICBA) design and evaluates the subsequent neutronics operating effects of this proposed fuel designs. The proposed LEU fuel specification in this work is directly related to both the RERTR LEU Development Program and the Advanced Test Reactor (ATR) LEU Conversion Project at Idaho National Laboratory (INL).

  18. Monolithically integrated two-axis microgripper for polarization maintaining in optical fiber assembly.

    Science.gov (United States)

    Zhang, Jianbin; Lu, Kangkang; Chen, Weihai; Jiang, Jun; Chen, Wenjie

    2015-02-01

    Polarization maintaining optical fiber (PMOF) is a kind of special optical fiber that is designed to transmit the linearly polarized light. Unlike the general optical fiber, it is critical to conduct the rotational alignment between two PMOFs to guarantee the efficiency of light transmission. Until now, this alignment task still cannot be addressed with an efficient and economical way. Hence, we propose a monolithically integrated two-axis flexure-based microgripper that has the grasping and rubbing functions. To achieve a compact structure, the microgripper is designed with an asymmetric architecture. In this paper, the pseudo-rigid body model approach and finite element analysis are conducted to provide the essential guideline to accomplish the theoretical design. The prototype is fabricated by wire electrical discharge machining, with which two experiments are conducted to validate the performance of the microgripper. The experimental results demonstrate that the proposed microgripper can firmly grasp the optical fiber with the diameter of 250 μm and meanwhile can rub it more than 90° accurately and effectively, which indicate that it can satisfy the operating requirements well in the PMOF assembly.

  19. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Vinayak, Seema [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India)]. E-mail: seema_vinayak@rediffmail.com; Vyas, H.P. [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India); Muraleedharan, K. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad-500058 (India); Vankar, V.D. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi- 110016 (India)

    2006-08-30

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R {sub S}) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R {sub S} and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition.

  20. Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

    Energy Technology Data Exchange (ETDEWEB)

    Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried [Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7, Vienna 1040 (Austria)

    2015-01-26

    A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} at 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

  1. Integrated unaligned resonant modulator tuning

    Energy Technology Data Exchange (ETDEWEB)

    Zortman, William A.; Lentine, Anthony L.

    2017-10-03

    Methods and systems for tuning a resonant modulator are disclosed. One method includes receiving a carrier signal modulated by the resonant modulator with a stream of data having an approximately equal number of high and low bits, determining an average power of the modulated carrier signal, comparing the average power to a predetermined threshold, and operating a tuning device coupled to the resonant modulator based on the comparison of the average power and the predetermined threshold. One system includes an input structure, a plurality of processing elements, and a digital control element. The input structure is configured to receive, from the resonant modulator, a modulated carrier signal. The plurality of processing elements are configured to determine an average power of the modulated carrier signal. The digital control element is configured to operate a tuning device coupled to the resonant modulator based on the average power of the modulated carrier signal.

  2. Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

    OpenAIRE

    Paolo Bardella; Chow, Weng W.; Ivo Montrosset

    2016-01-01

    In the last few decades, various solutions have been proposed to increase the modulation bandwidth and, consequently, the transmission bit-rate of semiconductor lasers. In this manuscript, we discuss a design procedure for a recently proposed laser cavity realized with the monolithic integration of two distributed Bragg reflector (DBR) lasers allowing one to extend the modulation bandwidth. Such an extension is obtained introducing in the dynamic response a photon-photon resonance (PPR) at a ...

  3. Materials and process development for the monolithic interconnected module (MIM) InGaAs/InP TPV cells

    Energy Technology Data Exchange (ETDEWEB)

    Fatemi, N.S.; Jenkins, P.P.; Hoffman, R.W. Jr.; Weizer, V.G. [Essential Research, Inc., Cleveland, OH (United States); Wilt, D.M. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Murray, C.S.; Riley, D. [Westinghouse Electric Corp., West Mifflin, PA (United States)

    1997-06-01

    Four major components of a thermophotovoltaic (TPV) energy conversion system are a heat source, a graybody or a selective emitter, spectrum shaping elements such as filters, and photovoltaic (PV) cells. One approach to achieving a high voltage/low current configuration is to fabricate a device, where small area PV cells are monolithically series connected. The authors have termed this device a monolithic interconnected module (MIM). A MIM device has other advantages over conventional one-junction cells, such as simplified array interconnections and heat-sinking, and radiation recycling capability via a back surface reflector (BSR). The authors confine the contents of this article to the MIM materials, process development, and some optical results. The successful fabrication of InGaAs/InP MIM devices entails the development and optimization of several key components and processes. These include: isolation trench via geometry, selective chemical etching, contact and interconnect metallization, dielectric isolation barrier, back surface reflector (BSR), and anti-reflection (AR) coating. The selection, development, and testing of the materials and processes described above for MIM fabrication will be described.

  4. First system experiments with a monolithically integrated tunable polarization diversity heterodyne receiver OEIC on InP

    Science.gov (United States)

    Hilbk, U.; Hermes, T.; Meissner, P.; Westphal, F. J.; Jacumeit, G.; Stenzel, R.; Unterboersch, G.

    1995-01-01

    System performance of an integrated polarization diversity heterodyne receiver optoelectronic IC (OEIC) is reported. The OEIC is monolithically integrated on InP. It includes a tunable 4 section DBR laser (quasi continuous tuning range 3.5 nm) and balanced photodiodes. The packaged OEIC is supplied with a fiber pigtail. Stable and polarization independent operation is achieved without any tendency for a bit error floor. The sensitivity at 1550.2 nm is -33.5 dBm at a bitrate of 140 Mbit/s. The performance of the OEIC based receiver is verified by operating in an experimental OFDM-TV distribution system with 4 channels.

  5. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  6. Compact 40 Gbit/s EML Module Integrated with Driver IC

    Science.gov (United States)

    Yagisawa, Takatoshi; Ikeuchi, Tadashi

    A compact (13.3 × 8.0 × 5.6mm) 40Gbit/s 1.55-µm electroabsorption (EA) modulator monolithically integrated distributed feedback (DFB) laser diode (EML) [1] module integrated with a driver IC has been developed. Its compactness was realized by employing a broadband feed-through and a bias tee which were accurately designed by 3-dimensional (3D) electromagnetic simulation. It was confirmed that the simulation results of the frequency response and the actual measurement results are corresponding well. Clear eye opening of the 40Gbit/s optical output waveform of the fabricated EML module was observed. Degradation was not observed even when the 40Gbit/s electrical signal was launched into the module via the flexible printed circuit (FPC).

  7. Design of monoliths through their mechanical properties.

    Science.gov (United States)

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  8. Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems

    Science.gov (United States)

    1989-05-01

    methods," SIAM J. as a Consultant to DOD on the VHSIC and various monolithic programs Numer. Anal., vol. 20, no. 3, pp. 510-536, 1983. and industrial ...algorithm," Acta Electronica Sinica. vol. 14, no. 4, pp. 91-96, 1986. Neglecting the higher order terms, we can express ,(x) 161 J. E. Dennis. Jr

  9. Monolithic liquid-chromatography columns for protein analysisprotein digest separation and integrated systems

    NARCIS (Netherlands)

    van de Meent, M.H.M.

    2010-01-01

    The objectives of the research described in this thesis are to evaluate the applicability of both silica-based and polymeric monolithic columns for protein analysis. The first part describes investigations into the effects of column length and stationary-phase chemistry on the separation of protein

  10. Interferometric wavelength converter operating at 10 Gb/s based on a monolithic-integrated photonic circuit

    Science.gov (United States)

    Rigo, C.; Coriasso, C.; Campi, D.; Stano, A.; Cacciatore, C.; Re, D.; Fornuto, G.; Soldani, D.; De Franceschi, R.; Ghiglieno, F.; Vallone, M.; Valenti, P.; Zucchelli, L.; Lupo, S.; Gambini, P.

    2000-02-01

    In this work we present a wavelength converter based on a Michelson interferometer. It is obtained by monolithic integration of two-semiconductor optical amplifiers with a passive waveguided X-coupler, incorporating turning mirrors. It operates in the 1.55 μm spectral window and allows the wavelength conversion of data streams up to 10 Gb/s, showing open-eye diagrams and extinction-ratio regeneration capabilities. Comparison of two structures with different active layers and their influence on the polarization sensitivity is also presented.

  11. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  12. Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Ribot, H.; Sansonetti, P.; Brandon, J.; Carre, M.; Menigaux, L.; Azoulay, R.; Bouadma, N.

    1989-02-06

    Monolithic integration of a quarter-circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45-..mu..m-long straight part and a quarter circle with a curvature radius of 150 ..mu..m. The component exhibits a threshold current of 50 mA in a pulsed regime. A 10 mW emission is measured from a 415-..mu..m-long tangential straight waveguide for an injection current of 140 mA.

  13. Integrating Oracle Human Resources with Other Modules

    Science.gov (United States)

    Sparks, Karl; Shope, Shawn

    1998-01-01

    One of the most challenging aspects of implementing an enterprise-wide business system is achieving integration of the different modules to the satisfaction of diverse customers. The Jet Propulsion Laboratory's (JPL) implementation of the Oracle application suite demonstrates the need to coordinate Oracle Human Resources Management System (HRMS) decision across the Oracle modules.

  14. Web Modules: Integrating Curricula and Technology Standards

    Science.gov (United States)

    Dawson, Carol

    2008-01-01

    The purposes of this article are to provide the sequence of learning events about the integration of curricula and technology using modules prepared by the Southeast Teachers Are Revitalizing Teaching Through Technology (START) Technology Team and to describe the impact these technology modules had on university faculty and candidates at Alabama…

  15. InP-based monolithically integrated 1310/1550nm diplexer/triplexer

    Science.gov (United States)

    Silfvenius, C.; Swillo, M.; Claesson, J.; Forsberg, E.; Akram, N.; Chacinski, M.; Thylén, L.

    2008-11-01

    Multiple streams of high definition television (HDTV) and improved home-working infrastructure are currently driving forces for potential fiber to the home (FTTH) customers [1]. There is an interest to reduce the cost and physical size of the FTTH equipment. The current fabrication methods have reached a cost minimum. We have addressed the costchallenge by developing 1310/(1490)/1550nm bidirectional diplexers, by monolithic seamless integration of lasers, photodiodes and wavelength division multiplexing (WDM) couplers into one single InP-based device. A 250nm wide optical gain profile covers the spectrum from 1310 to 1550nm and is the principal building block. The device fabrication is basically based on the established configuration of using split-contacts on continuos waveguides. Optical and electrical cross-talks are further addressed by using a Y-configuration to physically separate the components from each other and avoid inline configurations such as when the incoming signal travels through the laser component or vice versa. By the eliminated butt-joint interfaces which can reflect light between components or be a current leakage path and by leaving optically absorbing (unpumped active) material to surround the components to absorb spontaneous emission and nonintentional reflections the devices are optically and electrically isolated from each other. Ridge waveguides (RWG) form the waveguides and which also maintain the absorbing material between them. The WDM functionality is designed for a large optical bandwidth complying with the wide spectral range in FTTH applications and also reducing the polarization dependence of the WDM-coupler. Lasing is achieved by forming facet-free, λ/4-shifted, DFB (distributed feedback laser) lasers emitting directly into the waveguide. The photodiodes are waveguide photo-diodes (WGPD). Our seamless technology is also able to array the single channel diplexers to 4 to 12 channel diplexer arrays with 250μm fiber port

  16. Modeling and design of a monolithically integrated power converter on SiC

    Science.gov (United States)

    Yu, L. C.; Sheng, K.; Zhao, J. H.

    2008-10-01

    To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.

  17. 1.55-μm InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication

    Science.gov (United States)

    Luo, Yi; Wen, Guo-Peng; Sun, Changzheng; Li, TongNing; Yang, Xin-Min; Wang, Ren-Fan; Wang, Cai-Lin; Jin, Jin-Yan

    1998-08-01

    In this paper, a 1.55 micrometers InGaAsP/InP partially gain- coupled DFB laser monolithically integrated with electroabsorption modulator is fabricated for the first time. The threshold current and the extinction ratio are 40 mA and 11 dB respectively.

  18. Solution-based photodetectors for monolithically integrated low-cost short-wave infrared focal plane arrays

    Science.gov (United States)

    Heves, Emre; Kayahan, Huseyin; Gurbuz, Yasar

    2013-05-01

    In this work, PbS Colloidal Quantum Dots (CQD) based photodiodes are realized on both silicon substrates and on the replicas of the ROICs in order to demonstrate fully integrated FPAs. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimization of IC integrable process steps resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies such as 32% is achieved for photodiodes on Si substrates and high responsivities up to 5,73 A/W is achieved for photodiodes on ROIC replicas. Also these detectors achieved very high normalized detectivities such as; 1.36 x 1011 Jones and 1.42 x 1012 Jones under 1V and 2V reverse bias respectively, which is close to conventional InGaAS SWIR detectors.

  19. InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide

    Science.gov (United States)

    Das, Utpal; Berger, Paul R.; Bhattacharya, Pallab K.

    1987-10-01

    A monolithically integrated guided-wave modulator has been realized by using molecular-beam epitaxial regrowth and ion-milling techniques. The guiding and modulating regions consist, respectively, of In-doped GaAs and GaAs/In(0.34)Ga(0.66)As strained-layer multiquantum wells. Modulation is achieved by field-enhanced electroabsorption in the multiquantum wells. The insertion loss of the modulator is 0.9 dB, and the transmission loss in the guides is less than or equal to 1 dB/cm. The temporal response of similar GaAs/InGaAs as-grown photodiodes to pulsed laser excitation is characterized by a rise time of 115 psec.

  20. A novel CMOS-compatible, monolithically integrated line-scan hyperspectral imager covering the VIS-NIR range

    Science.gov (United States)

    Gonzalez, Pilar; Tack, Klaas; Geelen, Bert; Masschelein, Bart; Charle, Wouter; Vereecke, Bart; Lambrechts, Andy

    2016-05-01

    Imec has developed a process for the monolithic integration of optical filters on top of CMOS image sensors, leading to compact, cost-efficient and faster hyperspectral cameras. Different prototype sensors are available, most notably a 600- 1000 nm line-scan imager, and two mosaic sensors: a 4x4 VIS (470-620 nm range) and a 5x5 VNIR (600-1000 nm). In response to the users' demand for a single sensor able to cover both the VIS and NIR ranges, further developments have been made to enable more demanding applications. As a result, this paper presents the latest addition to imec's family of monolithically-integrated hyperspectral sensors: a line scan sensor covering the range 470-900 nm. This new prototype sensor can acquire hyperspectral image cubes of 2048 pixels over 192 bands (128 bands for the 600- 900 nm range, and 64 bands for the 470-620 nm range) at 340 cubes per second for normal machine vision illumination levels.

  1. Modulation characteristics of a DFB-laser with integrated spot-size converter for efficient laser fiber coupling

    Energy Technology Data Exchange (ETDEWEB)

    Zengerle, R.; Greus, C.; Burkhard, H.; Ries, R.; Janning, H.; Kuphal, E. [Deutsche Telekom AG, Technologiezentrum, Darmstadt (Germany); Huebner, B. [Univ. Wuerzburg (Germany). Technische Physik

    1996-12-31

    The RF-modulation emission characteristics of a MQW DFB laser monolithically integrated with a laterally tapered spot-size transformer on InGaAsP/InP were investigated and key results were presented. Despite the relatively simple design of the devices they are characterized by good high speed lasing properties with a direct modulation response exceeding 5 GHz. A simple low loss chip-fiber coupling arrangement with large optical alignment tolerances was demonstrated and is regarded as a particular advantage of these devices. Their experiments confirm the attractivity of this integration concept for low cost laser components in optical transmission systems.

  2. SPICE Level 3 and BSIM3v3.1 characterization of monolithic integrated CMOS-MEMS devices

    Science.gov (United States)

    Staple, Bevan D.; Watts, Herman A.; Dyck, Christopher W.; Griego, A. P.; Hewlett, F. W.; Smith, James H.

    1998-09-01

    Thy monolithic integration of MicroElectroMechanical Systems (MEMS) with the driving, controlling, and signal processing electronics promises to improve the performance of micromechanical devices as well as lower their manufacturing, packaging, and instrumentation costs. Key to this integration is the proper interleaving, combining, and customizing of the manufacturing processes to produce functional integrated micromechanical devices with electronics. We have developed a MEMS-first monolithic integrated process that first seals the micromechanical devices in a planarized trench and then builds the electronics in a conventional CMOS process. To date, most of the research published on this technology has focused on the performance characteristics of the mechanical portion of the devices, with little information on the attributes of the accompanying electronics. This work attempts to reduce this information void by presenting the results of SPICE Level 3 and BSIM3v3.1 model parameters extracted for the CMOS portion of the MEMS-first process. Transistor-level simulations of MOSFET current, capacitance, output resistance, and transconductance versus voltage using the extracted model parameters closely match the measured data. Moreover, in model validation efforts, circuit-level simulation values for the average gate propagation delay in a 101-stage ring oscillator are within 13 - 18% of the measured data. These results establish the following: (1) the MEMS-first approach produces functional CMOS devices integrated on a single chip with MEMS devices and (2) the devices manufactured in the approach have excellent transistor characteristics. Thus, the MEMS-first approach renders a solid technology foundation for customers designing in the technology.

  3. Short optical pulse generated by integrated MQW DBR laser/EA-modulator

    Science.gov (United States)

    Chen, Young-Kai; Tanbun-Ek, Tawee; Logan, Ralph A.; Tate, A. R.; Sergent, A. M.; Wecht, K. W.; Sciortino, Paul F., Jr.; Raybon, Gregory; Froberg, Nan M.; Johnson, Anthony M.

    1994-05-01

    We report on the generation of short optical pulses by utilizing the non-linear absorption characteristics of a multiple quantum well (MQW) electro-absorption modulator, which is monolithically integrated with a MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Optical pulses as short as 39 ps and 15 ps have been generated at a repetition rate of 3 GHz and 10 GHz, respectively, with a broad tuning range of 5.4 nm near 1554 nm lasing wavelength.

  4. Monolithically integrated planar front-end photoreceivers with 0.25-micron gate pseudomorphic In(0.60)Ga(0.40)As/In(0.52)Al(0.48)As/InP modulation-doped field-effect transistors

    Science.gov (United States)

    Lai, R.; Bhattacharya, P. K.; Pavlidis, D.; Brock, T.

    1991-02-01

    Monolithically InP-based pin-MODFET front-end photoreceivers realized by MBE regrowth have been characterized. The FWHM of the temporal response to photoexcitation for the full circuit was 60 psec, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 ohms is 15.0 GHz. The performance of the pin-MODFET photoreceiver circuit is comparable to the best hybrid circuits with InP-based devices.

  5. Integrating Software Modules For Robot Control

    Science.gov (United States)

    Volpe, Richard A.; Khosla, Pradeep; Stewart, David B.

    1993-01-01

    Reconfigurable, sensor-based control system uses state variables in systematic integration of reusable control modules. Designed for open-architecture hardware including many general-purpose microprocessors, each having own local memory plus access to global shared memory. Implemented in software as extension of Chimera II real-time operating system. Provides transparent computing mechanism for intertask communication between control modules and generic process-module architecture for multiprocessor realtime computation. Used to control robot arm. Proves useful in variety of other control and robotic applications.

  6. Impact of P2 scribe geometry on monolithic series interconnected CIGS modules

    Science.gov (United States)

    Rekow, M.; Bartl, D.; Sandfort, C.; Letsch, A.

    2013-03-01

    The CIGS (Copper Indium Gallium Selenide) solar panel industry is cautiously moving to adopt laser processes for the P2 and the P3 scribe steps that form the electrical interconnection between cells within a module [1]. In this work we study variants of these two laser processes and evaluate their relative performance. P2 scribes are applied with geometries that range from continuous scribes to discrete spots and we examine the relationship between scribe geometry and P2 contact resistance. Transmission line theory [2] is used to calculate P2 contact resistance as is common in the industry. The results are compared with two simple geometric models that predict relative contact resistance for different scribe geometries. We also apply different types of scribes for both P2 and P3 in the production of minimodules and evaluate the results. We find that not only is the optimal geometry for the P2 scribe a continuous line, high overlap of the laser spots yields an improvement in contact resistance not predicted by geometry alone. Finally we find that removing only the TCO (transparent conductive oxide) layer for the P3 scribe results in modules with good efficiency, however a P3 scribe that removes the TCO and CIGS layer yields better modules with about 1% higher absolute efficiency.

  7. Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Wang, Baojun; Zhou, Fan

    2005-11-01

    A 1.55-μm ridge DFB laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum well intermixing and dual-core technologies. These devices exhibit threshold current of 28 mA, side mode suppression ratio of 38.0 dB, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 8.0°×12.6°, respectively, resulting in 3.2 dB coupling loss with a cleaved single-mode optical fiber.

  8. Direct optical injection locking of monolithically integrated In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As MODFET oscillators

    Science.gov (United States)

    Yang, D.; Bhattacharya, P. K.; Brock, T.

    1993-05-01

    The authors have fabricated monolithically integrated In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As 0.25-micron gate MODFET oscillators. The results of direct optical subharmonic injection locking of these oscillator circuits at 10.159 and 19.033 GHz are presented.

  9. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm

    Science.gov (United States)

    Liu, Yang; Ye, Nan; Zhou, Dai-Bing; Wang, Bao-Jun; Pan, Jiao-Qing; Zhao, Ling-Juan; Wang, Wei

    2011-02-01

    A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43 nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths, is successfully demonstrated.

  10. Large microwave tunability of GaAs-based multiferroic heterostructure for applications in monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yajie; Gao Jinsheng; Vittoria, C; Harris, V G [Center for Microwave Magnetic Materials and Integrated Circuits, and the Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115 (United States); Heiman, D, E-mail: y.chen@neu.ed [Department of Physics, Northeastern University, Boston, MA 02115 (United States)

    2010-12-15

    Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co{sub 2}MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate-lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm{sup -1} resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV{sup -1}. This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.

  11. Integrated monolithic 3D MEMS scanner for switchable real time vertical/horizontal cross-sectional imaging.

    Science.gov (United States)

    Li, Haijun; Duan, Xiyu; Qiu, Zhen; Zhou, Quan; Kurabayashi, Katsuo; Oldham, Kenn R; Wang, Thomas D

    2016-02-08

    We present an integrated monolithic, electrostatic 3D MEMS scanner with a compact chip size of 3.2 × 2.9 mm(2). Use of parametric excitation near resonance frequencies produced large optical deflection angles up to ± 27° and ± 28.5° in the X- and Y-axes and displacements up to 510 μm in the Z-axis with low drive voltages at atmospheric pressure. When packaged in a dual axes confocal endomicroscope, horizontal and vertical cross-sectional images can be collected seamlessly in tissue with a large field-of-view of >1 × 1 mm(2) and 1 × 0.41 mm(2), respectively, at 5 frames/sec.

  12. Mode-locked InAs/InP quantum-dash-based DBR laser with monolithically integrated SOA

    Science.gov (United States)

    Joshi, Siddharth; Chimot, Nicolas; Barbet, Sophie; Accard, Alain; Lelarge, François

    2014-02-01

    We present the first demonstration of InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits. The laser cavity is closed using a specific Bragg reflector without compromising the mode-locking performance of the laser. This enables the integration of single-section mode- locked laser on photonic integrated circuits as on-chip frequency comb source. As a demonstration, we integrate the Fabry Perot laser with a semiconductor optical amplifier. Such a device could be used for amplification or modulation of the frequency generated comb. We thus investigate the device operation to obtain a NRZ modulated comb.

  13. Development towards cell-to-cell monolithic integration of a thin-film solar cell and lithium-ion accumulator

    Science.gov (United States)

    Agbo, Solomon N.; Merdzhanova, Tsvetelina; Yu, Shicheng; Tempel, Hermann; Kungl, Hans; Eichel, Rüdiger-A.; Rau, Uwe; Astakhov, Oleksandr

    2016-09-01

    This work focuses on the potentials of monolithic integrated thin-film silicon solar cell and lithium ion cell in a simple cell-to-cell integration without any control electronics as a compact power solution for portable electronic devices. To demonstrate this we used triple-junction thin-film silicon solar cell connected directly to a lithium ion battery cell to charge the battery and in turn discharge the battery through the solar cell. Our results show that with appropriate voltage matching the solar cell provides efficient charging for lab-scale lithium ion storage cell. Despite the absence of any control electronics the discharge rate of the Li-ion cell through the non-illuminated solar cell can be much lower than the charging rate when the current voltage (IV) characteristics of the solar cell is matched properly to the charge-discharge characteristics of the battery. This indicates good sustainability of the ultimately simple integrated device. At the maximum power point, solar energy-to-battery charging efficiency of 8.5% which is nearly the conversion efficiency of the solar cell was obtained indicating potential for loss-free operation of the photovoltaic (PV)-battery integration. For the rest of the charging points, an average of 8.0% charging efficiency was obtained.

  14. Monolithic spectrometer

    Science.gov (United States)

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  15. Selective-area MOVPE growth for 10 Gbit/s electroabsorption modulator integrated with a tunable DBR laser

    Science.gov (United States)

    Kim, Sung-Bock; Sim, Jae-Sik; Kim, Ki Soo; Sim, Eun-Deok; Ryu, Sang-Wan; Park, Hong Lee

    2007-01-01

    We have designed and fabricated electroabsorption modulator integrated monolithically with a distributed Bragg reflector laser using selective area growth (SAG) by metalorganic vapor phase epitaxy (MOVPE). Through the bandgap engineering due to the growth rate enhancement and compositional variation from the difference of migration and/or diffusion length of species by various SAG mask pattern, we have achieved the photoluminescence peak wavelengths of active layer in the laser, modulator, and Bragg grating regions to 1.557, 1.503, and 1.442 μm, respectively. The electroabsorption modulator-integrated laser shows a good performance including threshold current of below 6 mA, output power of 5 mW for 45 mA current injected in the active region, and high side-mode suppression ratio over 45 dB with the 3-dB modulation bandwidth over 11 GHz.

  16. CdSe colloidal nanocrystals monolithically integrated in a pseudomorphic semiconductor epilayer

    Energy Technology Data Exchange (ETDEWEB)

    Larramendi, Erick M. [Physics Faculty-ICTM, University of Havana, Colina Universitaria, C.P. 10400 Havana (Cuba); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universitaet Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany); Schoeps, Oliver; Woggon, Ulrike [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Artemyev, Mikhail V. [Institute for Physico-Chemical Problems, Belarussian State University, Minsk 220080 (Belarus); Schikora, Detlef; Lischka, Klaus [Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universitaet Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany)

    2013-01-14

    As optically active emitters in a semiconductor matrix, core/shell and bare CdSe colloidal nanocrystals (CNCs) were monolithically incorporated in ZnSe pseudomorphic epilayers by molecular beam epitaxy (MBE). A suspension of wet chemically synthesized CNCs was sprayed ex-situ over a pseudomorphic ZnSe/GaAs(001) heterostructure using a nebulizer. Subsequently, the matrix material growth was resumed to form a capping layer by a slow MBE growth mode. Structural investigations show high crystalline quality and pseudomorphic epitaxial character of the whole hybrid CNC-matrix structure. The core/shell CNCs remain optically active following the embedding process. Their emission is blue shifted without a significant change on the spectral shape, and shows the same temperature dependence as that of the free exciton peak energy in zinc-blende CdSe at temperatures above 80 K. Our optical characterization of the samples showed that the embedded CNCs were stable and that the structure of the host was preserved. These results are encouraging for the fabrication of more complex optoelectronic devices based on CNCs.

  17. Simply and reliably integrating micro heaters/sensors in a monolithic PCR-CE microfluidic genetic analysis system.

    Science.gov (United States)

    Zhong, Runtao; Pan, Xiaoyan; Jiang, Lei; Dai, Zhongpeng; Qin, Jianhua; Lin, Bingcheng

    2009-04-01

    A novel fabrication process was presented to construct a monolithic integrated PCR-CE microfluidic DNA analysis system as a step toward building a total genetic analysis microsystem. Microfabricated Titanium/Platinum (Ti/Pt) heaters and resistance temperature detectors (RTDs) were integrated on the backside of a bonded glass chip to provide good thermal transfer and precise temperature detection for the drilled PCR-wells. This heater/RTD integration procedure was simple and reliable, and the resulting metal layer can be easily renewed when the Ti/Pt layer was damaged in later use or novel heater/RTD design was desired. A straightforward "RTD-calibration" method was employed to optimize the chip-based thermal cycling conditions. This method was convenient and rapid, comparing with a conventional RTD-calibration/temperature adjustment method. The highest ramping rates of 14 degrees C/s for heating and 5 degrees C/s for cooling in a 3-microL reaction volume allow 30 complete PCR cycles in about 33 min. After effectively passivating the PCR-well surface, successful lambda-phage DNA amplifications were achieved using a two- or three-temperature cycling protocol. The functionality and performance of the integrated microsystem were demonstrated by successful amplification and subsequent on-line separation/sizing of lambda-phage DNA. A rapid assay for Hepatitis B virus, one of the major human pathogens, was performed in less than 45 min, demonstrating that the developed PCR-CE microsystem was capable of performing automatic and high-speed genetic analysis.

  18. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22mW Output Power and 51 ITU 100 GHz Channels over 43 nm

    Institute of Scientific and Technical Information of China (English)

    LIU Yang; YE Nan; ZHOU Dai-Bing; WANG Bao-Jun; PAN Jiao-Qing; ZHAO Ling-Juan; WANG Wei

    2011-01-01

    @@ A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths, is successfully demonstrated.%A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43nm from 1514.05nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 m W for all output wavelengths,is successfully demonstrated.

  19. An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector

    DEFF Research Database (Denmark)

    Saini, Vikram; Yvind, Kresten; Larsson, David

    2006-01-01

    A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integr...

  20. Development of a GaAs-Based Monolithic Surface Acoustic Wave Integrated Chemical Microsensor

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1998-10-28

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other rf applications.

  1. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  2. Shape-anchored porous polymer monoliths for integrated online solid-phase extraction-microchip electrophoresis-electrospray ionization mass spectrometry.

    Science.gov (United States)

    Nordman, Nina; Barrios-Lopez, Brianda; Laurén, Susanna; Suvanto, Pia; Kotiaho, Tapio; Franssila, Sami; Kostiainen, Risto; Sikanen, Tiina

    2015-02-01

    We report a simple protocol for fabrication of shape-anchored porous polymer monoliths (PPMs) for on-chip SPE prior to online microchip electrophoresis (ME) separation and on-chip (ESI/MS). The chip design comprises a standard ME separation channel with simple cross injector and a fully integrated ESI emitter featuring coaxial sheath liquid channel. The monolith zone was prepared in situ at the injection cross by laser-initiated photopolymerization through the microchip cover layer. The use of high-power laser allowed not only maskless patterning of a precisely defined monolith zone, but also faster exposure time (here, 7 min) compared with flood exposure UV lamps. The size of the monolith pattern was defined by the diameter of the laser output (∅500 μm) and the porosity was geared toward high through-flow to allow electrokinetic actuation and thus avoid coupling to external pumps. Placing the monolith at the injection cross enabled firm anchoring based on its cross-shape so that no surface premodification with anchoring linkers was needed. In addition, sample loading and subsequent injection (elution) to the separation channel could be performed similar to standard ME setup. As a result, 15- to 23-fold enrichment factors were obtained already at loading (preconcentration) times as short as 25 s without sacrificing the throughput of ME analysis. The performance of the SPE-ME-ESI/MS chip was repeatable within 3.1% and 11.5% RSD (n = 3) in terms of migration time and peak height, respectively, and linear correlation was observed between the loading time and peak area.

  3. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Science.gov (United States)

    Gajos, Katarzyna; Angelopoulou, Michailia; Petrou, Panagiota; Awsiuk, Kamil; Kakabakos, Sotirios; Haasnoot, Willem; Bernasik, Andrzej; Rysz, Jakub; Marzec, Mateusz M.; Misiakos, Konstantinos; Raptis, Ioannis; Budkowski, Andrzej

    2016-11-01

    Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays with dramatically improved both intra-chip response repeatability and assay detection sensitivity.

  4. WDM module research within the Canadian Solid State Optoelectronics Consortium

    Science.gov (United States)

    Fallahi, Mahmoud; Koteles, Emil S.; Delage, Andre; Chatenoud, F.; Templeton, Ian M.; Champion, Garth; He, Jian Jun; Wang, Weijian; Dion, Michael M.; Barber, Richard A.

    1995-02-01

    We report on the design, growth, fabrication, and characterization of monolithic wavelength division multiplexed (WDM) modules produced within the Canadian Solid State Optoelectronics Consortium. The transmitter module includes multiple, discrete wavelength, distributed Bragg reflector (DBR) laser diodes monolithically integrated with waveguide combiners fabricated using an InGaAs/GaAs heterostructure. The wavelength demultiplexer unit is based on a Rowland circle grating spectrometer monolithically integrated with a metal- semiconductor-metal (MSM) detector array fabricated on an InGaAs/AlGaAs/GaAs heterostructure. The epitaxial layer wafers for both transmitter and receiver modules were grown in single molecular beam epitaxy (MBE) runs.

  5. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  6. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  7. A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

    Institute of Scientific and Technical Information of China (English)

    Yu Changliang; Mao Luhong; Xiao Xindong; Xie Sheng; Zhang Shilin

    2009-01-01

    This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic inte grated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photo generated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM pho todetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.

  8. Diamond as a material for monolithically integrated optical and optomechanical devices

    CERN Document Server

    Rath, Patrik; Nebel, Christoph; Pernice, Wolfram H P

    2016-01-01

    Diamond provides superior optical and mechanical material properties, making it a prime candidate for the realization of integrated optomechanical circuits. Because diamond sub- strates have matured in size, efficient nanostructuring methods can be used to realize full-scale integrated devices. Here we review optical and mechanical resonators fab- ricated from polycrystalline as well as single crystalline diamond. We present relevant material properties with respect to implementing optomechanical devices and compare them with other material systems. We give an overview of diamond integrated optomechanical circuits and present the optical readout mechanism and the actuation via optical or electrostatic forces that have been implemented to date. By combining diamond nanophotonic circuits with superconducting nanowires single photons can be efficiently detected on such chips and we outline how future single photon optomechanical circuits can be realized on this platform.

  9. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: kasia.fornal@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Angelopoulou, Michailia; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Haasnoot, Willem [RIKILT Wageningen UR, Akkermaalsbos 2, 6708 WB Wageningen (Netherlands); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Marzec, Mateusz M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland)

    2016-11-01

    Highlights: • Optimization of probe immobilization with robotic spotter printing overlapping spots. • In-situ inspection of microstructured surfaces of biosensors integrated on silicon. • Imaging and chemical analysis of immobilization, surface blocking and immunoreaction. • Insight with molecular discrimination into step-by-step sensor surface modifications. • Optimized biofunctionalization improves sensor sensitivity and response repeatability. - Abstract: Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays

  10. Dry Etching of GaAs to Fabricate Via-Hole Grounds in Monolithic Microwave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    D.S. Rawal

    2009-07-01

    Full Text Available This study investigates the dry etching of 60 mm dia, 200 mm deep holes for fabrication of through substrate via holes for grounding monolithic microwave integrated circuits (MMICs, on 3-inch dia semiinsulating GaAs wafer using RIE and ICP processes with CFC and non-CFC gas chemistry, respectively. The effect of various process parameters on GaAs etch rate and resultant etch profile was investigated. Two kinds of masks, photoresist and Ni, were used to etch GaAs and performance was compared by investigating effect on etch rate, etch depth, etch profile, and surface morphology. The etch profile, etch depth, and surface morphology of as-etched samples were characterised by scanning electron microscopy. The desired 200 mm deep strawberry profile was obtained at 40 mTorr for both RIE and ICP processes with an etch rate of ~1.3 mm/min and ~4 mm/min respectively. Ni metal mask was used for RIE process due to poor photoresist selectivity, whereas ICP process utilised photoresist as mask. The vias were then metallised by depositing a thin seed layer of Ti/Au (1000 Å using radio frequency sputtering and Au (~5 mm electroplated to connect the frontside pad and back side ground plane. The typical parasitic inductance offered by these via for RIE and ICP processes was ~76 pH and 83 pH respectively, which is well within the acceptable limits. The developed process was finally integrated to in-house MMIC production line.Defence Science Journal, 2009, 59(4, pp.363-370, DOI:http://dx.doi.org/10.14429/dsj.59.1535

  11. Tandem electro-absorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short-pulse generation

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Zhou, G. T.; Wu, J.; Wang, L. F.; Wang, W.

    2005-11-01

    A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area growth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio when coupled into a single mode fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

  12. Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution,

  13. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    Science.gov (United States)

    Ye, Nan; Liu, Yang; Wang, BaoJun; Zhou, DaiBing; Pang, JiaoQing; Zhao, LingJuan; Wang, Wei

    2011-01-01

    More than 11mW output powers for all wavelengths from the fiber and over 49 nm range tuning in sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier which is enabling access to 110 ITU 50GHz channels is demonstrated. Tilted amplifier and anti-reflection facet coating are used to suppress reflection.

  14. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  15. Evolution of the Department of Defense Millimeter and Microwave Monolithic Integrated Circuit Program

    Science.gov (United States)

    2007-02-01

    Dertouzos, Michael; Lester, Richard K.; Solow , Robert M.; Thorow, Lester C., “Toward a New Industrial America Scientific American, June 1989, pp...Vladimir Gelnovatch, Director of the U.S. Army Electronics Technology and Devices Laboratory; and Robert Heaston, Office of Under Secretary of Defense...Jack S. Kilby and Robert N. Noyce shared honors for the achievement. Hybrid microwave and millimeter wave integrated circuits achieved greater

  16. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yang; Ye Nan; Wang Baojun; Zhou Daibing; An Xin; Bian Jing; Pan Jiaoqing; Zhao Lingjuan; Wang Wei, E-mail: matsu@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-07-15

    High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.

  17. Ultrasensitive Nanoelectrospray Ionization-Mass Spectrometry using Poly(dimethylsiloxane) Microchips with Monolithically Integrated Emitters

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xuefei; Kelly, Ryan T.; Tang, Keqi; Smith, Richard D.

    2010-09-01

    Poly(dimethylsiloxane) (PDMS) is the most widely used substrate for microfluidic devices as it enables facile fabrication and has other distinctive properties. However, for applications involving highly sensitive nanoelectrospray ionization mass spectrometry (nanoESI-MS) detection, the use of PDMS microdevices has been hindered by the leaching of uncross-linked oligomers and other contaminants from the substrate that yields a large background of chemical noise in the mass spectra. A more general challenge is that microfluidic devices containing integrated electrospray emitters are frequently unable to operate stably in the nanoflow regime where the best sensitivity is achieved. In this report, we extracted the contaminants from PDMS substrates using a series of solvents, eliminating the background observed when untreated PDMS microchips are used for nanoESI-MS. Optimization of the integrated emitter geometry enabled stable operation at flow rates as low as 10 nL/min. Peptide concentrations of 1 nM were readily detected, representing ~170 zmol of consumed analyte, and an extrapolated detection limit of ~40 zmol; these are the lowest mass and concentration detection limits reported to date for a microchip having an integrated electrospray emitter.

  18. Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array

    Science.gov (United States)

    Becker, A.; Sichkovskyi, V.; Bjelica, M.; Rippien, A.; Schnabel, F.; Kaiser, M.; Eyal, O.; Witzigmann, B.; Eisenstein, G.; Reithmaier, J. P.

    2017-05-01

    A monolithically integrated widely tunable narrow-linewidth light source was realized on an InP-based quantum dot (QD) gain material. The quasi zero-dimensional nature of QDs and the resulting low linewidth enhancement factor enabled standalone distributed feedback (DFB) lasers with intrinsic linewidths as low as 110 kHz. An integrated device comprising four DFB lasers with on-chip micro-heaters, a 3 dB-coupler network, and a semiconductor optical amplifier (SOA), which covers the entire C+ telecom band, exhibits a linewidth of below 200 kHz independent of the SOA operation current.

  19. Stationary Optical Concentrator Designs and Wafer Scale Monolithic Integration of Semiconductor Devices for Next Generation Photovoltaic Panels

    Science.gov (United States)

    Kim, Jung Min

    A major barrier in utilizing solar energy for large scale deployment is the cost of the photovoltaic (PV) systems. Several approaches have been used for the cost reduction such as by modifying PV system designs in addition to enhancing the efficiency of solar cells. Due to the high cost of materials, minimizing the use of solar cells such as in concentrator type systems is highly attractive for reducing the cost of the PV modules by focusing the incident light onto the PV cell. However concentrator PV systems (CPV) require constant tracking of the sun and hence are complex in design and expensive to operate, except in limited situations such as large scale PV power plants. It is desirable to design new concentrator type systems that do not require continuous tracking of the sun. These systems could ultimately reduce the PV system cost to a minimum while maximizing the power conversion efficiency. In this thesis we propose a simple design for a stationary concentrator photovoltaic (SCPV) system that could significantly reduce the cost of generating electricity using PV devices. Using optical ray tracing simulations, we have been able to design SCPV systems that could reduce the PV module cost by 2--10 times without compromising on the power conversion efficiency of the system. Another alternative approach for sustainable high efficiency PV system design is to develop low cost PV cells for terrestrial applications. To meet the demands of low cost and large scale production, larger and thinner (or flexible) substrates are required. We demonstrated the feasibility of fabricating monolithic interconnected PV devices at the wafer scale (2 inch wafers). In this study, GaSb PV cells grown on semi-insulating GaAs were used as the model material. Crucial device fabrication steps such as a selective etching process have been developed that is necessary for isolating individual devices on the wafer and interconnecting them with sub-micron scale accuracy. Selective etching of

  20. Asymptotic Behavior of Integral Closures in Modules

    Institute of Scientific and Technical Information of China (English)

    R.Naghipour; P.Schenzel

    2007-01-01

    Let R be a commutative Noetherian Nagata ring,let M be a non-zero finitely generated R-module,and let I be an ideal of R such that height M I > O.In this paper,there is a definition of the integral closure Na for any submodule N of M extending Rees'definition for the case of a domain.As the main results,it is shown that the operation N →Na on the set of submodules N of M is a semi-prime operation,and for any submodule Nof M,the sequences Ass R M/(InN)a and hssR(InM)a/(InN)a (n=1,2,...) of associated prime ideals are increasing and ultimately constant for large n.

  1. Monolithic integration of microfluidic channels and optical waveguides in silica on silicon

    DEFF Research Database (Denmark)

    Friis, Peter; Hoppe, Karsten; Leistiko, Otto

    2001-01-01

    Sealing of the flow channel is an important aspect during integration of microfluidic channels and optical waveguides. The uneven topography of many waveguide-fabrication techniques will lead to leakage of the fluid channels. Planarization methods such as chemical mechanical polishing or the etch......-back technique are possible, but troublesome. We present a simple but efficient alternative: By means of changing the waveguide layout, bonding pads are formed along the microfluidic channels. With the same height as the waveguide, they effectively prevent leakage and hermetically seal the channels during...

  2. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  3. A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator.

    OpenAIRE

    Roux, P.; BAEYENS, Y.; Wohlgemuth, O.; Chen, Y.K.

    2005-01-01

    A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2µm SiGe HBT process. Up to –5 dBm output power is achieved at 180 GHz using a technology with a transition frequency fT of 200 GHz and maximum oscillation frequency fMAX of 275 GHz. Preliminary phase noise measurements show a phase noise of less than –90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.

  4. Towards monolithically integrated CMOS cameras for active imaging with 600 GHz radiation

    Science.gov (United States)

    Boppel, Sebastian; Lisauskas, Alvydas; Krozer, Viktor; Roskos, Hartmut G.

    2012-02-01

    We explore terahertz imaging with CMOS field-effect transistors exploiting their plasmonic detection capability and the advantages of CMOS technology for the fabrication of THz cameras with respect to process stability, array uniformity, ease of integration of additional functionality, scalability and cost-effectiveness. A 100×100-pixel camera with an active area of 20×20 mm² is physically simulated by scanning single detectors and groups of a few detectors in the image plane. Using detectors with a noise-equivalent power of 43 pW/√Hz, a distributed illumination of 432 μW at 591.4 GHz, and an integration time of 20 ms (for a possible frame rate of 17 fps), this virtual camera allows to obtain images with a dynamic range of at least 20 dB and a resolution approaching the diffraction limit. Imaging examples acquired in direct and heterodyne detection mode, and in transmission and reflection geometry, show the potential for real-time operation. It is demonstrated that heterodyning (i) improves the dynamic range substantially even if the radiation from the local oscillator is distributed over the camera area, and (ii) allows sensitive determination of object-induced phase changes, which promises the realization of coherent imaging systems.

  5. Physical and chemical sensing using monolithic semiconductor optical transducers

    Science.gov (United States)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  6. Monolithic Multi-Colour 40 GHz Mode-Locked Laser Array

    OpenAIRE

    Hou, Lianping; Eddie, Iain; Marsh, John

    2016-01-01

    The monolithic integration of four 40 GHz multi-colored mode-locked lasers with a 4×1 MMI, four electroabsorption modulators and an SOA has been demonstrated. The shortest pulse widths are between 2.63 and 2.85 ps.

  7. On-chip optical phase locking of single growth monolithically integrated Slotted Fabry Perot lasers.

    Science.gov (United States)

    Morrissey, P E; Cotter, W; Goulding, D; Kelleher, B; Osborne, S; Yang, H; O'Callaghan, J; Roycroft, B; Corbett, B; Peters, F H

    2013-07-15

    This work investigates the optical phase locking performance of Slotted Fabry Perot (SFP) lasers and develops an integrated variable phase locked system on chip for the first time to our knowledge using these lasers. Stable phase locking is demonstrated between two SFP lasers coupled on chip via a variable gain waveguide section. The two lasers are biased differently, one just above the threshold current of the device with the other at three times this value. The coupling between the lasers can be controlled using the variable gain section which can act as a variable optical attenuator or amplifier depending on bias. Using this, the width of the stable phase locking region on chip is shown to be variable.

  8. Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

    Science.gov (United States)

    Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

    2017-08-16

    The mid-infrared (2.5 infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

  9. Enhancing flow boiling heat transfer in microchannels for thermal management with monolithically-integrated silicon nanowires.

    Science.gov (United States)

    Li, D; Wu, G S; Wang, W; Wang, Y D; Liu, Dong; Zhang, D C; Chen, Y F; Peterson, G P; Yang, Ronggui

    2012-07-11

    Thermal management has become a critical issue for high heat flux electronics and energy systems. Integrated two-phase microchannel liquid-cooling technology has been envisioned as a promising solution, but with great challenges in flow instability. In this work, silicon nanowires were synthesized in situ in parallel silicon microchannel arrays for the first time to suppress the flow instability and to augment flow boiling heat transfer. Significant enhancement in flow boiling heat transfer performance was demonstrated for the nanowire-coated microchannel heat sink, such as an early onset of nucleate boiling, a delayed onset of flow oscillation, suppressed oscillating amplitudes of temperature and pressure drop, and an increased heat transfer coefficient.

  10. Monolithic integration of microfluidic channels and optical waveguides in silica on silicon.

    Science.gov (United States)

    Friis, P; Hoppe, K; Leistiko, O; Mogensen, K B; Hübner, J; Kutter, J P

    2001-12-01

    Sealing of the flow channel is an important aspect during integration of microfluidic channels and optical waveguides. The uneven topography of many waveguide-fabrication techniques will lead to leakage of the fluid channels. Planarization methods such as chemical mechanical polishing or the etch-back technique are possible, but troublesome. We present a simple but efficient alternative: By means of changing the waveguide layout, bonding pads are formed along the microfluidic channels. With the same height as the waveguide, they effectively prevent leakage and hermetically seal the channels during bonding. Negligible influence on light propagation is found when 10-mum-wide bonding pads are used. Fabricated microsystems with application in absorbance measurements and flow cytometry are presented.

  11. Monolithic integration of GMR sensors for standard CMOS-IC current sensing

    Science.gov (United States)

    De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

    2017-09-01

    In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

  12. Back End of Line Nanorelays for Ultra-low Power Monolithic Integrated NEMS-CMOS Circuits

    KAUST Repository

    Lechuga Aranda, Jesus Javier

    2016-05-01

    Since the introduction of Complementary-Metal-Oxide-Semiconductor (CMOS) technology, the chip industry has enjoyed many benefits of transistor feature size scaling, including higher speed and device density and improved energy efficiency. However, in the recent years, the IC designers have encountered a few roadblocks, namely reaching the physical limits of scaling and also increased device leakage which has resulted in a slow-down of supply voltage and power density scaling. Therefore, there has been an extensive hunt for alternative circuit architectures and switching devices that can alleviate or eliminate the current crisis in the semiconductor industry. The Nano-Electro-Mechanical (NEM) relay is a promising alternative switch that offers zero leakage and abrupt turn-on behaviour. Even though these devices are intrinsically slower than CMOS transistors, new circuit design techniques tailored for the electromechanical properties of such devices can be leveraged to design medium performance, ultra-low power integrated circuits. In this thesis, we deal with a new generation of such devices that is built in the back end of line (BEOL) CMOS process and is an ideal option for full integration with current CMOS transistor technology. Simulation and verification at the circuit and system level is a critical step in the design flow of microelectronic circuits, and this is especially important for new technologies that lack the standard design infrastructure and well-known verification platforms. Although most of the physical and electrical properties of NEM structures can be simulated using standard electronic automation software, there is no report of a reliable behavioural model for NEMS switches that enable large circuit simulations. In this work, we present an optimised model of a BEOL nano relay that encompasses all the electromechanical characteristics of the device and is robust and lightweight enough for VLSI applications that require simulation of thousands of

  13. Smart monolithic integration of inkjet printed thermal flow sensors with fast prototyping polymer microfluidics

    Science.gov (United States)

    Etxebarria, Ikerne; Elizalde, Jorge; Pacios, Roberto

    2016-08-01

    There is an increasing demand for built-in flow sensors in order to effectively control microfluidic processes due to the high number of available microfluidic applications. The possible solutions should be inexpensive and easy to connect to both, the microscale features and the macro setup. In this paper, we present a novel approach to integrate a printed thermal flow sensor with polymeric microfluidic channels. This approach is focused on merging two high throughput production processes, namely inkjet printing and fast prototyping technologies, in order to produce trustworthy and low cost devices. These two technologies are brought together to obtain a sensor located outside the microfluidic device. This avoids the critical contact between the sensor material and the fluids through the microchannels that can seriously damage the conducting paths under continuous working regimes. In this way, we ensure reliable and stable operation modes. For this application, a silver nanoparticle based ink and cyclic olefin polymer were used. This flow sensor operates linearly in the range of 0-10 μl min-1 for water and 0-20 μl min-1 for ethanol in calorimetric mode. Switching to anemometric mode, the range can be expanded up to 40 μl min-1.

  14. Towards monolithic integration of mode-locked vertical cavity surface emitting laser

    Science.gov (United States)

    Aldaz, Rafael I.

    2007-12-01

    The speed and performance of today's high end computing and communications systems have placed difficult but still feasible demands on off-chip electrical interconnects. However, future interconnect systems may need aggregate bandwidths well into the terahertz range thereby making electrical bandwidth, density, and power targets impossible to meet. Optical interconnects, and specifically compact semiconductor mode-locked lasers, could alleviate this problem by providing short pulses in time at 10s of GHz repetition rates for Optical Time Division Multiplexing (OTDM) and clock distribution applications. Furthermore, the characteristic spectral comb of frequencies of these lasers could also serve as a multi-wavelength source for Wavelength Division Multiplexing (WDM) applications. A fully integrated mode-locked Vertical Cavity Surface Emitting Laser (VCSEL) is proposed as a low-cost high-speed source for these applications. The fundamental laser platform for such a device has been developed and a continuous-wave version of these lasers has been fabricated and demonstrated excellent results. Output powers close to 60mW have been obtained with very high beam quality factor of M2 unassisted ultrafast QD saturable absorbers, without the need to incorporate high concentrations of non radiative recombination centers by either ion-implantation or low temperature growth.

  15. On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

    Science.gov (United States)

    Matsuda, Nobuyuki; Karkus, Peter; Nishi, Hidetaka; Tsuchizawa, Tai; Munro, William J; Takesue, Hiroki; Yamada, Koji

    2014-09-22

    We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

  16. RF to millimeter wave integration and module technologies

    Science.gov (United States)

    Vähä-Heikkilä, T.

    2015-04-01

    Radio Frequency (RF) consumer applications have boosted silicon integrated circuits (IC) and corresponding technologies. More and more functions are integrated to ICs and their performance is also increasing. However, RF front-end modules with filters and switches as well as antennas still need other way of integration. This paper focuses to RF front-end module and antenna developments as well as to the integration of millimeter wave radios. VTT Technical Research Centre of Finland has developed both Low Temperature Co-fired Ceramics (LTCC) and Integrated Passive Devices (IPD) integration platforms for RF and millimeter wave integrated modules. In addition to in-house technologies, VTT is using module and component technologies from other commercial sources.

  17. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Dept. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Kong, X.; Trampert, A. [Paul-Drude-Institut fuer Festkoeperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-05-06

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  18. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    Science.gov (United States)

    Albert, S.; Bengoechea-Encabo, A.; Kong, X.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A.

    2013-05-01

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  19. Lossless intensity modulation in integrated photonics.

    Science.gov (United States)

    Sandhu, Sunil; Fan, Shanhui

    2012-02-13

    We present a dynamical analysis of lossless intensity modulation in two different ring resonator geometries. In both geometries, we demonstrate modulation schemes that result in a symmetrical output with an infinite on/off ratio. The systems behave as lossless intensity modulators where the time-averaged output optical power is equal to the time-averaged input optical power.

  20. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  1. InGaP DHBT for High Efficiency L-band T/R Module Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A fully monolithically integrated L-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is...

  2. On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon

    Science.gov (United States)

    Yang, Jun; Bhattacharya, Pallab; Qin, Guoxuan; Ma, Zhenqiang

    2008-02-01

    Compound-semiconductor-based photonic devices, including lasers and modulators, directly grown and on-chip integrated on Si substrates provide a promising approach for the realization of optical interconnects with CMOS compatibility. Utilizing quantum dots as efficient dislocation filters near the GaAs-Si interface, for the first time, we demonstrated high-performance InGaAs/GaAs quantum dot (QD) lasers on silicon with a relatively low threshold current (J th = 900 A/cm2), large small-signal modulation bandwidth of 5.5 GHz, and a high characteristic temperature (T 0 = 278 K). The integrated InGaAs QD lasers with quantum well (QW) electroabsorption modulators, achieved through molecular beam epitaxy (MBE) growth and regrowth, exhibit a coupling coefficient greater than 20% and a modulation depth ~100% at 5 V reverse bias. We achieved the monolithic integration of amorphous and crystalline silicon waveguides with quantum dot lasers by using plasma-enhanced-chemical-vapor-deposition (PECVD) and membrane transfer, respectively. Finally, preliminary results on the integration of QD lasers with Si CMOS transistors are presented.

  3. Integrated Performance Testing Workshop, Modules 6 - 11

    Energy Technology Data Exchange (ETDEWEB)

    Leach, Janice; Torres, Teresa M.

    2012-10-01

    These modules cover performance testing of: Interior Detection Systems; Access Controls; Exterior Detection Systems; Video Assessment Systems; SNM / Contraband Detection Systems; Access Delay Elements

  4. A 3D porous polymer monolith-based platform integrated in poly(dimethylsiloxane) microchips for immunoassay.

    Science.gov (United States)

    Kang, Qin-Shu; Shen, Xiao-Fan; Hu, Na-Na; Hu, Meng-Jia; Liao, Hui; Wang, Han-Zhong; He, Zhi-Ke; Huang, Wei-Hua

    2013-05-01

    In this work, we demonstrate the immunocapture and on-line fluorescence immunoassay of protein and virus based on porous polymer monoliths (PPM) in microfluidic devices. Poly(glycidyl methacrylate-co-ethylene glycol dimethacrylate) [poly(GMA-co-EGDMA)] monoliths were successfully synthesized in the polydimethylsiloxane (PDMS) microfluidic channels by in situ UV-initiated free radical polymerization. After surface modification, PPM provides a high-surface area and specific affinity 3D substrate for immunoassays. Combining with well controlled microfluidic devices, the direct immunoassay of IgG and sandwich immunoassay of inactivated H1N1 influenza virus using 5 μL sample has been accomplished, with detection limits of 4 ng mL(-1) and less than 10 pg mL(-1), respectively. The enhanced detection sensitivity is due to both high surface area of PPM and flow-through design. The detection time was obviously decreased mainly due to the shortened diffusion distance and improved convective mass transfer inside the monolith, which accelerates the reaction kinetics between antigen and antibody. This work provides a novel microfluidic immunoassay platform with high efficiency thereby enabling fast and sensitive immunoassay.

  5. 40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme

    Science.gov (United States)

    Luo, Yi; Xiong, Bing; Wang, Jian; Cai, Pengfei; Sun, Changzheng

    2006-10-01

    An AlGaInAs multiple-quantum-well (MQW) distributed feedback (DFB) laser is monolithically integrated with a lumped-electrode electroabsorption (EA) modulator based on an identical epitaxial layer integration scheme. The device exhibits a threshold current of 12 mA and an extinction ratio of higher than 13 dB under a 3 V reverse bias. By adopting a dry-etched high-mesa ridge waveguide and planar electrode structures, the capacitance of the modulator is reduced to about 0.11 pF and a 3 dBe modulation bandwidth of over 40 GHz has been demonstrated. To our knowledge, this is the first report on a 40 GHz operation of AlGaInAs integrated light sources.

  6. Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Zhou, G. T.; Wu, J.; Wang, L. F.; Wang, W.

    2005-08-01

    A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.

  7. The effect of zinc diffusion on extinction ratio of MQW electroabsorption modulator integrated with DFB laser

    Science.gov (United States)

    Zhou, Daibing; Zhang, Ruikang; Wang, Huitao; Wang, Baojun; Bian, Jing; An, Xin; Zhao, Lingjuan; Zhu, Hongliang; Ji, Chen; Wang, Wei

    2014-11-01

    Monolithically integrated electroabsorption modulated lasers (EML) are widely being used in the optical fiber communication systems, due to their low chip, compact size and good compatible with the current communication systems. In this paper, we investigated the effect of Zinc diffusion on extinction ratio of electroabsorption modulator (EAM) integrated with distributed feedback laser (DFB). EML was fabricated by selective area growth (SAG) technology. The MQW structure of different quantum energy levels was grown on n-type InP buffer layer with 150nm thick SiO2 parallel stripes mask by selective area metal-organic chemical vapor deposition (MOCVD). A 35nm photoluminescence wavelength variation was observed between the laser area (λPL=1535nm) and modulator area (λPL=1500nm) by adjusting the dimension of parallel stripes. The grating (λ=1550nm) was fabricated in the selective area. The device was mesa ridge structure, which was constituted of the DFB laser, isolation gap and modulator. The length of every part is 300μm, 50μm, and 150μm respectively. Two samples were fabricated with the same structure and different p-type Zn-doped concentration, the extinction ratio of heavy Zn-doped device is 12.5dB at -6V. In contrast, the extinction ratio of light Zn-doped device is 20dB at -6V, that was improved for approximate 60%. The different Zn diffusion depth into the MQW absorption layer was observed by Secondary ion mass spectrometer (SIMS). The heavy Zn-doped device diffused into absorption layer deeper than the light Zn-doped device, which caused the large non-uniformity of the electric field in the MQW layer. So the extinction ratio characteristics can be improved by optimizing the Zn-doped concentration of p-type layer.

  8. Phase-modulating lasers toward on-chip integration.

    Science.gov (United States)

    Kurosaka, Yoshitaka; Hirose, Kazuyoshi; Sugiyama, Takahiro; Takiguchi, Yu; Nomoto, Yoshiro

    2016-07-26

    Controlling laser-beam patterns is indispensable in modern technology, where lasers are typically combined with phase-modulating elements such as diffractive optical elements or spatial light modulators. However, the combination of separate elements is not only a challenge for on-chip miniaturisation but also hinders their integration permitting the switchable control of individual modules. Here, we demonstrate the operation of phase-modulating lasers that emit arbitrarily configurable beam patterns without requiring any optical elements or scanning devices. We introduce a phase-modulating resonator in a semiconductor laser, which allows the concurrent realisation of lasing and phase modulation. The fabricated devices are on-chip-sized, making them suitable for integration. We believe this work will provide a breakthrough in various laser applications such as switchable illumination patterns for bio-medical applications, structured illuminations, and even real three-dimensional or highly realistic displays, which cannot be realised with simple combinations of conventional devices or elements.

  9. Linear, Low Noise Microwave Photonic Systems using Phase and Frequency Modulation

    Science.gov (United States)

    2012-05-11

    a monolithically integrated widely-tunable laser- phase modulator ,” in Proc. Optical Fiber Communication Conf. OFC 2004, vol. 2, 2004. [92] M. N... modulation efficiency experimental setup. . . . . . . . . . . . . . 70 5.5 DBR FM modulation efficiency versus frequency. . . . . . . . . . . . 71 v 5.6...Phase-noise limited noise figure for FM DBR lasers from measured modulation efficiency and linewidth. . . . . . . . . . . . . . . . . . . . 71 5.7

  10. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Science.gov (United States)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  11. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  12. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  13. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  14. Integration of hybrid silicon lasers and electroabsorption modulators.

    Science.gov (United States)

    Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

    2008-08-18

    We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of 2GHz with 5 dB DC extinction.

  15. 85 km Long Reach PON System Using a Reflective SOA-EA Modulator and Distributed Raman Fiber Amplification

    DEFF Research Database (Denmark)

    Tafur Monroy, Idelfonso; Öhman, Filip; Yvind, Kresten

    2006-01-01

    We report on a bidirectional 85 km long reach PON system supported by distributed fiber Raman amplification with a record 7.5 Gb/s remote carrier modulated upstream signal by employing a reflective SOA-EA monolithically integrated circuit......We report on a bidirectional 85 km long reach PON system supported by distributed fiber Raman amplification with a record 7.5 Gb/s remote carrier modulated upstream signal by employing a reflective SOA-EA monolithically integrated circuit...

  16. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    Science.gov (United States)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  17. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

    Science.gov (United States)

    Kowsz, Stacy J; Young, Erin C; Yonkee, Benjamin P; Pynn, Christopher D; Farrell, Robert M; Speck, James S; DenBaars, Steven P; Nakamura, Shuji

    2017-02-20

    We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

  18. Monoliths in Bioprocess Technology

    Directory of Open Access Journals (Sweden)

    Vignesh Rajamanickam

    2015-04-01

    Full Text Available Monolithic columns are a special type of chromatography column, which can be used for the purification of different biomolecules. They have become popular due to their high mass transfer properties and short purification times. Several articles have already discussed monolith manufacturing, as well as monolith characteristics. In contrast, this review focuses on the applied aspect of monoliths and discusses the most relevant biomolecules that can be successfully purified by them. We describe success stories for viruses, nucleic acids and proteins and compare them to conventional purification methods. Furthermore, the advantages of monolithic columns over particle-based resins, as well as the limitations of monoliths are discussed. With a compilation of commercially available monolithic columns, this review aims at serving as a ‘yellow pages’ for bioprocess engineers who face the challenge of purifying a certain biomolecule using monoliths.

  19. Integrative modules for efficient genome engineering in yeast

    Directory of Open Access Journals (Sweden)

    Triana Amen

    2017-06-01

    Full Text Available We present a set of vectors containing integrative modules for efficient genome integration into the commonly used selection marker loci of the yeast Saccharomyces cerevisiae. A fragment for genome integration is generated via PCR with a unique set of short primers and integrated into HIS3, URA3, ADE2, and TRP1 loci. The desired level of expression can be achieved by using constitutive (TEF1p, GPD1p, inducible (CUP1p, GAL1/10p, and daughter-specific (DSE4p promoters available in the modules. The reduced size of the integrative module compared to conventional integrative plasmids allows efficient integration of multiple fragments. We demonstrate the efficiency of this tool by simultaneously tagging markers of the nucleus, vacuole, actin, and peroxisomes with genomically integrated fluorophores. Improved integration of our new pDK plasmid series allows stable introduction of several genes and can be used for multi-color imaging. New bidirectional promoters (TEF1p-GPD1p, TEF1p-CUP1p, and TEF1p-DSE4p allow tractable metabolic engineering.

  20. Photovoltaic manufacturing technology monolithic amorphous silicon modules on continuous polymer substrates: Final technical report, July 5, 1995--December 31, 1999

    Energy Technology Data Exchange (ETDEWEB)

    Jeffrey, F.

    2000-03-28

    Iowa Thin Film Technologies is completing a three-phase program that has increased throughput and decreased costs in nearly all aspects of its thin-film photovoltaic manufacturing process. The overall manufacturing costs have been reduced by 61 percent through implementation of the improvements developed under this program. Development of the ability to use a 1-mil substrate, rather than the standard 2-mil substrate, results in a 50 percent cost-saving for this material. Process development on a single-pass amorphous silicon deposition system has resulted in a 37 percent throughput improvement. A wide range of process and machine improvements have been implemented on the transparent conducting oxide deposition system. These include detailed parameter optimization of deposition temperatures, process gas flows, carrier gas flows, and web speeds. An overall process throughput improvement of 275 percent was achieved based on this work. The new alignment technique was developed for the laser scriber and printer systems, which improved registration accuracy from 100 microns to 10 microns. The new technique also reduced alignment time for these registration systems significantly. This resulted in a throughput increase of 75 percent on the scriber and 600 percent on the printer. Automated techniques were designed and implemented for the module assembly processes. These include automated busbar attachment, roll-based lamination, and automated die cutting of finished modules. These processes were previously done by hand labor. Throughput improvements ranged from 200 percent to 1200 percent, relative to hand labor rates. A wide range of potential encapsulation materials were evaluated for suitability in a roll lamination process and for cost-effectiveness. A combination material was found that has a cost that is only 10 percent of the standard EVA/Tefzel cost and is suitable for medium-lifetime applications. The 20-year lifetime applications still require the more expensive

  1. Innovative use of power integrated modules for DC power supplies

    DEFF Research Database (Denmark)

    Ørndrup Nielsen, Rasmus; Elkiær, Alexander; Munk-Nielsen, Stig;

    2013-01-01

    In this article several innovative ways of utilizing Power Integrated Modules (PIM) as switching device in a DC power supply are presented. PIM have advantages in compactness of design, cost and fast prototype due to easier PCB layout. A PIM converter topology is chosen and designed resulting...... in an experimental setup. Results from the setup are presented showing the feasibility of using a PIM module as almost all power semiconductors in a DC power supply....

  2. Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra.

    Science.gov (United States)

    Lee, Kwanjae; Choi, Ilgyu; Lee, Cheul-Ro; Chung, Tae-Hoon; Kim, Yoon Seok; Jeong, Kwang-Un; Chung, Dong Chul; Kim, Jin Soo

    2017-08-02

    We report a phosphor-free white light-emitting diodes (LED) realized by the monolithic integration of In0.18Ga0.82N/GaN (438 nm, blue), In0.26Ga0.74N/GaN (513 nm, green), and In0.45Ga0.55N/In0.13Ga0.87N (602 nm, red) quantum wells (QWs) as an active medium. The QWs corresponding to blue and green light were grown using a conventional growth mode. For the red spectral emission, five-stacked In0.45Ga0.55N/In0.13Ga0.87N QWs were realized by the so-called Ga-flow-interruption (Ga-FI) technique, wherein the Ga supply was periodically interrupted during the deposition of In0.3Ga0.7N to form an In0.45Ga0.55N well. The vertical and lateral distributions of the three different light emissions were investigated by fluorescence microscope (FM) images. The FM image measured at a focal point in the middle of the n-GaN cladding layer for the red-emitting LED shows that light emissions with flower-like patterns with six petals are periodically observed. The chromaticity coordinates of the electroluminescence spectrum for the white LEDs at an injection current of 80 mA are measured to be (0.316, 0.312), which is close to ideal white light. In contrast with phosphor-free white-light-emitting devices based on nanostructures, our white light device exhibits a mixture of three independent wavelengths by monolithically grown InGaN-based QWs, thus demonstrating a more facile technique to obtain white LEDs.

  3. CLARM: An integrative approach for functional modules discovery

    KAUST Repository

    Salem, Saeed M.

    2011-01-01

    Functional module discovery aims to find well-connected subnetworks which can serve as candidate protein complexes. Advances in High-throughput proteomic technologies have enabled the collection of large amount of interaction data as well as gene expression data. We propose, CLARM, a clustering algorithm that integrates gene expression profiles and protein protein interaction network for biological modules discovery. The main premise is that by enriching the interaction network by adding interactions between genes which are highly co-expressed over a wide range of biological and environmental conditions, we can improve the quality of the discovered modules. Protein protein interactions, known protein complexes, and gene expression profiles for diverse environmental conditions from the yeast Saccharomyces cerevisiae were used for evaluate the biological significance of the reported modules. Our experiments show that the CLARM approach is competitive to wellestablished module discovery methods. Copyright © 2011 ACM.

  4. Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission.

    Science.gov (United States)

    Kang, Chang-Mo; Kang, Seok-Jin; Mun, Seung-Hyun; Choi, Soo-Young; Min, Jung-Hong; Kim, Sanghyeon; Shim, Jae-Phil; Lee, Dong-Seon

    2017-09-04

    In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530-630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.

  5. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

    Science.gov (United States)

    Tian, Ye; Zetterling, Carl-Mikael

    2017-09-01

    This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

  6. A hybrid fluorous monolithic capillary column with integrated nanoelectrospray ionization emitter for determination of perfluoroalkyl acids by nano-liquid chromatography-nanoelectrospray ionization-mass spectrometry/mass spectrometry.

    Science.gov (United States)

    Zhang, Haiyang; Ou, Junjie; Wei, Yinmao; Wang, Hongwei; Liu, Zhongshan; Zou, Hanfa

    2016-04-01

    A hybrid fluorous monolithic column was simply prepared via photo-initiated free radical polymerization of an acrylopropyl polyhedral oligomeric silsesquioxane (acryl-POSS) and a perfluorous monomer (2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl acrylate) in UV-transparent fused-silica capillaries within 5min. The physical characterization of hybrid fluorous monolith, including scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectroscopy, mercury intrusion porosimetry (MIP) and nitrogen adsorption/desorption measurement was performed. Chromatographic performance was also evaluated by capillary liquid chromatography (cLC). Due to the fluorous-fluorous interaction between fluorous monolith and analytes, fluorobenzenes could well be separated, and the column efficiencies reached 86,600-92,500plates/m at the velocity of 0.87mm/s for alkylbenzenes and 51,900-76,000plates/m at the velocity of 1.10mm/s for fluorobenzenes. Meanwhile, an approach to integrate nanoelectrospray ionization (ESI) emitter with hybrid fluorous monolithic column was developed for quantitative determination of perfluoroalkyl acids by nanoHPLC-ESI-MS/MS. The integration design could minimize extracolumn volume, thus excluding undesirable peak broadening and improving separation performance.

  7. Electroabsorption modulators integrated with DFB lasers based on identical active double-stack MQW-layer structure with high-frequency performance

    Science.gov (United States)

    Stegmueller, Bernhard; Hanke, Christian

    2003-12-01

    Electro optic modulators are key components for fiber optic transmission at data rates exceeding 10Gbit/s. The monolithic integration of an electroabsorption (EA) modulator applying the quantum confined stark effect with a distributed feedback (DFB) laser diode was demonstrated using a novel approach based on a double-stack multiple quantum well (MQW) structure. This novel approach using an identical MQW layer structure for both devices, the DFB laser diode and the EA modulator, will be described and discussed. Recently, a maximum 3dB-cutoff frequency of 25 GHz was measured. Further experimental results obtained from devices operating at 1.3 μm and 1.55 μm, respectively, exhibit the potential of these devices for high-speed data rate transmission.

  8. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  9. Integrated L-Band T/R Module Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of this Phase II project is to deliver an integrated L-band transmit/receive (T/R) module which will be fabricated from a GaAs-based combined HBT/PHEMT...

  10. Integrable highest weight modules over affine superalgebras and number theory

    CERN Document Server

    Kac, V G

    1994-01-01

    In the first part of the paper we give the denominator identity for all simple finite-dimensional Lie super algebras \\frak g\\/ with a non-degenerate invariant bilinear form. We give also a character and (super) dimension formulas for all finite-dimensional irreducible \\frak g\\/-modules of atypicality \\leq 1\\/ . In the second part of the paper we give the denominator identity for the affine superalgebras \\hat{\\frak g}\\/ associated to \\frak g\\/. Specializations of this identity give almost all old and many new formulas for the number of representations of an integer as sums of squares and sums of triangular numbers. At the end, we introduce the notion of an integrable \\hat{\\frak g}\\/-module and give a classification of irreducible integrable highest weight \\hat{\\frak g}\\/-modules.

  11. Integrated Photonics Research Topical Meeting (1993)

    Science.gov (United States)

    1994-06-01

    integrated with an electroabsorption (EA) modulator was also demonstrated (24] using an 9.1 mm long extended cavity laser with an integrated DBR grating. A...se./ 414 / IWA3-1 A 16xl WDM Transmitter with Integrated DBR Lasers and Electroabsorption Modulators Ktt G. Young, U. Koren, B.l. Miller, MLA...INTRODUCTION Monolithic integrated circuits containing both semiconductor optical and electronic elements should provide improved performance and

  12. All-optical phase modulation for integrated interferometric biosensors.

    Science.gov (United States)

    Dante, Stefania; Duval, Daphné; Sepúlveda, Borja; González-Guerrero, Ana Belen; Sendra, José Ramón; Lechuga, Laura M

    2012-03-26

    We present the theoretical and the experimental implementation of an all-optical phase modulation system in integrated Mach-Zehnder Interferometers to solve the drawbacks related to the periodic nature of the interferometric signal. Sensor phase is tuned by modulating the emission wavelength of low-cost commercial laser diodes by changing their output power. FFT deconvolution of the signal allows for direct phase readout, immune to sensitivity variations and to light intensity fluctuations. This simple phase modulation scheme increases the signal-to-noise ratio of the measurements in one order of magnitude, rendering in a sensor with a detection limit of 1.9·10⁻⁷ RIU. The viability of the all-optical modulation approach is demonstrated with an immunoassay detection as a biosensing proof of concept.

  13. 10-gigabit colourless reflective amplified modulator for access network

    Science.gov (United States)

    Kazmierski, C.; Garreau, A.; Decobert, J.; Cuisin, M.-C.; Provost, J.-G.; Sillard, H.; Blache, F.; Carpentier, D.; Landreau, J.; Chanclou, P.

    2006-07-01

    For high speed remote colorless modulation in FTTH technology, a new 10Gbit/s monolithically integrated amplified reflective electroabsorption modulator (R-EAM-SOA) is demonstrated over 50nm spectral range and over 20°C-60°C, with excellent eye diagrams.

  14. Versatile Endpoint Storage Security with Trusted Integrity Modules

    DEFF Research Database (Denmark)

    Gonzalez, Javier; Bonnet, Philippe

    2014-01-01

    Net), or because they are constrained to specific hardware/software combinations (e.g., McAfee’s DeepSafe). In this paper, we propose a solution for personal devices equipped with a Trusted Execution Environment and a Secure Element. We propose Trusted Integrity Modules, separated by hardware from the operating...... system and applications, that guarantee the durability, confidentiality and integrity of a configurable subset of the filesystem data and meta-data. While, we detail our design with the Linux virtual file system, we expect that our results can be applied to a range of different file systems. As Trusted...... Execution Environments also become available in Cloud environments, we envisage that Trusted Integrity Modules could constitute the solution of choice for endpoint storage security on both clients and servers....

  15. Efficient colored silicon solar modules using integrated resonant dielectric nanoscatterers

    Science.gov (United States)

    Neder, Verena; Luxembourg, Stefan L.; Polman, Albert

    2017-08-01

    We demonstrate photovoltaic modules with a bright green color based on silicon heterojunction solar cells integrated with arrays of light scattering dielectric nanoscatterers. Dense arrays of crystalline silicon nanocylinders, 100-120 nm wide, 240 nm tall, and 325 nm pitch, are made onto module cover slides using substrate-conformal soft-imprint lithography. Strong electric and magnetic dipolar Mie resonances with a narrow linewidth (Q ˜ 30) cause strong (35%-40%) specular light scattering on resonance (˜540 nm). The green color is observed over a wide range of angles (8°-75°). As the resonant nanoscatterers are transparent for the major fraction of the incident solar spectrum, the relative loss in short-circuit current is only 10%-11%. The soft-imprinted nanopatterns can be applied on full-size solar modules and integrated with conventional module encapsulation. The dielectric Mie resonances can be controlled by geometry, opening up a road for designing efficient colorful or white building-integrated photovoltaics.

  16. An Integrated Simulation Module for Cyber-Physical Automation Systems.

    Science.gov (United States)

    Ferracuti, Francesco; Freddi, Alessandro; Monteriù, Andrea; Prist, Mariorosario

    2016-05-05

    The integration of Wireless Sensors Networks (WSNs) into Cyber Physical Systems (CPSs) is an important research problem to solve in order to increase the performances, safety, reliability and usability of wireless automation systems. Due to the complexity of real CPSs, emulators and simulators are often used to replace the real control devices and physical connections during the development stage. The most widespread simulators are free, open source, expandable, flexible and fully integrated into mathematical modeling tools; however, the connection at a physical level and the direct interaction with the real process via the WSN are only marginally tackled; moreover, the simulated wireless sensor motes are not able to generate the analogue output typically required for control purposes. A new simulation module for the control of a wireless cyber-physical system is proposed in this paper. The module integrates the COntiki OS JAva Simulator (COOJA), a cross-level wireless sensor network simulator, and the LabVIEW system design software from National Instruments. The proposed software module has been called "GILOO" (Graphical Integration of Labview and cOOja). It allows one to develop and to debug control strategies over the WSN both using virtual or real hardware modules, such as the National Instruments Real-Time Module platform, the CompactRio, the Supervisory Control And Data Acquisition (SCADA), etc. To test the proposed solution, we decided to integrate it with one of the most popular simulators, i.e., the Contiki OS, and wireless motes, i.e., the Sky mote. As a further contribution, the Contiki Sky DAC driver and a new "Advanced Sky GUI" have been proposed and tested in the COOJA Simulator in order to provide the possibility to develop control over the WSN. To test the performances of the proposed GILOO software module, several experimental tests have been made, and interesting preliminary results are reported. The GILOO module has been applied to a smart home

  17. An Integrated Simulation Module for Cyber-Physical Automation Systems

    Directory of Open Access Journals (Sweden)

    Francesco Ferracuti

    2016-05-01

    Full Text Available The integration of Wireless Sensors Networks (WSNs into Cyber Physical Systems (CPSs is an important research problem to solve in order to increase the performances, safety, reliability and usability of wireless automation systems. Due to the complexity of real CPSs, emulators and simulators are often used to replace the real control devices and physical connections during the development stage. The most widespread simulators are free, open source, expandable, flexible and fully integrated into mathematical modeling tools; however, the connection at a physical level and the direct interaction with the real process via the WSN are only marginally tackled; moreover, the simulated wireless sensor motes are not able to generate the analogue output typically required for control purposes. A new simulation module for the control of a wireless cyber-physical system is proposed in this paper. The module integrates the COntiki OS JAva Simulator (COOJA, a cross-level wireless sensor network simulator, and the LabVIEW system design software from National Instruments. The proposed software module has been called “GILOO” (Graphical Integration of Labview and cOOja. It allows one to develop and to debug control strategies over the WSN both using virtual or real hardware modules, such as the National Instruments Real-Time Module platform, the CompactRio, the Supervisory Control And Data Acquisition (SCADA, etc. To test the proposed solution, we decided to integrate it with one of the most popular simulators, i.e., the Contiki OS, and wireless motes, i.e., the Sky mote. As a further contribution, the Contiki Sky DAC driver and a new “Advanced Sky GUI” have been proposed and tested in the COOJA Simulator in order to provide the possibility to develop control over the WSN. To test the performances of the proposed GILOO software module, several experimental tests have been made, and interesting preliminary results are reported. The GILOO module has been

  18. Josephson junction microwave modulators for qubit control

    Science.gov (United States)

    Naaman, O.; Strong, J. A.; Ferguson, D. G.; Egan, J.; Bailey, N.; Hinkey, R. T.

    2017-02-01

    We demonstrate Josephson junction based double-balanced mixer and phase shifter circuits operating at 6-10 GHz and integrate these components to implement both a monolithic amplitude/phase vector modulator and an I/Q quadrature mixer. The devices are actuated by flux signals, dissipate no power on chip, exhibit input saturation powers in excess of 1 nW, and provide cryogenic microwave modulation solutions for integrated control of superconducting qubits.

  19. Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

    Directory of Open Access Journals (Sweden)

    Paolo Bardella

    2016-01-01

    Full Text Available In the last few decades, various solutions have been proposed to increase the modulation bandwidth and, consequently, the transmission bit-rate of semiconductor lasers. In this manuscript, we discuss a design procedure for a recently proposed laser cavity realized with the monolithic integration of two distributed Bragg reflector (DBR lasers allowing one to extend the modulation bandwidth. Such an extension is obtained introducing in the dynamic response a photon-photon resonance (PPR at a frequency higher than the modulation bandwidth of the corresponding single-section laser. Design guidelines will be proposed, and dynamic small and large signal simulations results, calculated using a finite difference traveling wave (FDTW numerical simulator, will be discussed to confirm the design results. The effectiveness of the design procedure is verified in a structure with PPR frequency at 35 GHz allowing one to obtain an open eye diagram for a non-return-to-zero (NRZ digital signal up to 80 GHz . Furthermore, the investigation of the rich dynamics of this structure shows that with proper bias conditions, it is possible to obtain also a tunable self-pulsating signal in a frequency range related to the PPR design.

  20. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

    Science.gov (United States)

    Aoki, Masahiro; Suzuki, Makoto; Sano, Hirohisa; Kawano, Toshihiro; Ido, Tatemi; Taniwatari, Tsuyoshi; Uomi, Kazuhisa; Takai, Atsushi

    1993-06-01

    Fabrication and basic characteristics of a new structure InGaAs/InGaAsP (MQW) electroabsorption modulator integrated with a distributed feedback (DFB) laser are presented. First, a fundamental study was performed on the applicability of the InGaAs/InGaAsP MQW structure to an electroabsorption-type modulator. We have experimentally demonstrated both the efficient attenuation, the small hole pileup and small chirp characteristics of a discrete modular based on this MQW structure. We also made a study of the controllability of in-plane band-gap energy by the use of selective area metal-organic chemical vapor deposition aimed at one-step growth integration of modulators and lasers. We demonstrated a sufficient range for controllable quantum energy level and high quality of the selectively grown MQW lasers. By using this technique, the modulator was monolithically integrated with a same-material MQW DFB laser. Using a low capacitance semi-insulating buried-hetero structure, we achieved over 14-GHz modulation under high-light-output operations up to +10 dBm.

  1. 10Gbps monolithic silicon FTTH transceiver for PON

    Science.gov (United States)

    Zhang, J.; Liow, T. Y.; Lo, G. Q.; Kwong, D. L.

    2010-05-01

    We propose a new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU), eliminating the need for an internal laser source in ONU. We adopt dual fiber network configuration. The internal light source in each of the ONUs is eliminated. Instead, an extra seed laser source in the optical line termination (OLT) operates in continuous wave mode to serve the ONUs in the PON as a shared and centralized laser source. λ1 from OLT Tx and λ2 from the seed laser are combined by using a WDM combiner and connected to serve the multiple ONUs through the downstream fibers. The ONUs receive the data in λ1. Meanwhile, the ONUs encode and transmit data in λ2, which are sent back to OLT. The monolithic ONU transceiver contains a wavelength-division-multiplexing (WDM) filter component, a silicon modulator and a Ge photo-detector. The WDM in ONU selectively guides λ1 to the Ge-PD where the data in λ1 are detected and converted to electrical signals, and λ2 to the transmitter where the light is modulated by upstream data. The modulated optical signals in λ2 from ONUs are connected back to OLT through upstream fibers. The monolithic ONU transceiver chip size is only 2mm by 4mm. The crosstalk between the Tx and Rx is measured to be less than -20dB. The transceiver chip is integrated on a SFP+ transceiver board. Both Tx and Rx demonstrated data rate capabilities of up to 10Gbps. By implementing this scheme, the ONU transceiver size can be significantly reduced and the assembly processes will be greatly simplified. The results demonstrate the feasibility of mass manufacturing monolithic silicon ONU transceivers via low cost

  2. CLIC two-beam module design and integration

    CERN Document Server

    Riddone, G; Gudkov, D

    2010-01-01

    Abstract The Compact LInear Collider (CLIC) is based on twobeam acceleration concept currently developed at CERN. The RF power is generated by a high-current electronbeam, called Drive Beam, (DB) running parallel to the Main Beam (MB). The DB is decelerated in dedicated power extraction structures (PETS) and the generated RF power is transferred via waveguides to the accelerating structures (AS). To facilitate the matching of the beams, components are assembled in 2-m long modules of few different types. Special modules are needed in damping regions or to contain dedicated instrumentation and vacuum equipment. The module design and integration has to cope with challenging requirements from the different technical systems. This paper reports the status of the engineering design and related technical issues.

  3. Vibration analysis of a bearing integrated sensor module

    Science.gov (United States)

    Suryavanshi, Abhijit P.; Gao, Robert X.

    2001-12-01

    Implementing a reliable condition monitoring system for bearing fault diagnosis and prognosis poses a big challenge to the industry. This challenge stems from the fact that bearing failure is statistical in nature, and thus contains elements of uncertainty and unpredictability. To achieve high accuracy in bearing diagnosis in spite of this inherent variance, reliable data acquisition and analysis techniques are needed. This paper focuses on the vibration analysis of a wireless transmitter module with an integrated sensor that is embedded into the bearing outer raceway for high signal-to-noise ratio data acquisition. A mechatronic design of the sensor module under severe space constraints is presented. The paper also analyses an optimizing scheme for the placement of sensor module substrate supports to reduce vibration transmitted from the bearing to the on-board electronics.

  4. Integrated system tests of the LSST raft tower modules

    Science.gov (United States)

    O'Connor, P.; Antilogus, P.; Doherty, P.; Haupt, J.; Herrmann, S.; Huffer, M.; Juramy-Giles, C.; Kuczewski, J.; Russo, S.; Stubbs, C.; Van Berg, R.

    2016-07-01

    The science focal plane of the LSST camera is made up of 21 fully autonomous 144 Mpixel imager units designated raft tower modules (RTM). These imagers incorporate nine 4K x 4K fully-depleted CCDs and 144 channels of readout electronics, including a dedicated CMOS video processing ASIC and components that provide CCD biasing and clocking, video digitization, thermal stabilization, and a high degree of monitoring and telemetry. The RTM achieves its performance goals for readout speed, read noise, linearity, and crosstalk with a power budget of less than 400mW/channel. Series production is underway on the first units and the production will run until 2018. We present the RTM final design, tests of the integrated signal chain, and performance results for the fully-integrated module with pre-production CCDs.

  5. Monolithic resonant optical reflector laser diodes

    Science.gov (United States)

    Hirata, T.; Suehiro, M.; Maeda, M.; Hihara, M.; Hosomatsu, H.

    1991-10-01

    The first monolithic resonant optical reflector laser diode that has a waveguide directional coupler and two DBR reflectors integrated by compositional disordering of quantum-well heterostructures is described. A linewidth of 440 kHz was obtained, and this value is expected to be greatly decreased by reducing the propagation loss in the integrated waveguide.

  6. Integrated Balanced BPSK Modulator for Millimeter Wave Systems

    Directory of Open Access Journals (Sweden)

    Asok De

    2007-10-01

    Full Text Available This paper details the design of integrated balanced PSK modulator using finline coplanar line hybrid junction. The PSK signal output is in suspended stripline with incident wave carrier in finline. Schottky barrier Diode MA4E2037 has been used for modulation. The balanced configuration offers high isolation between the carrier input port and the modulated carrier output port and thus the pulse width variations and amplitude deviations are suppressed. An insertion loss imbalance of ±1.5 dB with an average loss of 2 dB in the two switching states has been achieved over 38.9 to 40 GHz. The phase imbalance is ±10 degrees with phase switching from 180 to 199 degrees As the PSK output signal is in suspended stripline, two BPSK modulators can be easily combined together to work as QPSK modulator.

  7. Monolithic integration of a lithium niobate microresonator with a free-standing waveguide using femtosecond laser assisted ion beam writing

    Science.gov (United States)

    Fang, Zhiwei; Xu, Yingxin; Wang, Min; Qiao, Lingling; Lin, Jintian; Fang, Wei; Cheng, Ya

    2017-01-01

    We demonstrated integrating a high quality factor lithium niobate microdisk resonator with a free-standing membrane waveguide. Our technique is based on femtosecond laser direct writing which produces the pre-structure, followed by focused ion beam milling which reduces the surface roughness of sidewall of the fabricated structure to nanometer scale. Efficient light coupling between the integrated waveguide and microdisk was achieved, and the quality factor of the microresonator was measured as high as 1.67 × 105. PMID:28358135

  8. The NGST Yardstick Integrated Science Instrument Module (ISIM) Feasibility Study

    Science.gov (United States)

    Greenhouse, M. A.; NGST ISIM Team

    1999-05-01

    The Next Generation Space Telescope (NGST) Integrated Science Instrument Module (ISIM) is a distributed system consisting of a cryogenic instrument module that is integrated with the Optical Telescope Assembly (OTA) and science processors, software, and other electronics located in the Space Support Module (SSM). The ISIM system provides structure, environment, and data handling for several modular science instruments as well as several components of the OTA optics train. An ISIM baseline design and feasibility study is ongoing at GSFC. This pre-Phase A design was developed for integration with the Yardstick NGST architecture and packaging in a 5 m class EELV fairing. The goals of this study are to: [1] demonstrate mission science feasibility, [2] assess ISIM engineering and cost feasibility, [3] identify ISIM technology challenge areas,and [4] enable smart customer procurement of the NGST. In depth results from this work beyond those displayed here can be found at: http://www701.gsfc.nasa.gov/isim/isim.htm The flight ISIM will be developed by a GSFC led IPT that includes members from the STScI and, during Phase A/B, will grow to include the NGST Prime Contractor, and science instrument development teams from European, Canadian , and US science communities. Science instruments will be competitively procured from the science community, and will be integrated into the ISIM by GSFC. The flight qualified ISIM will then be delivered by GSFC to the NGST Prime Contractor for observatory level integration. At the start of NGST Phase A (Spring 1999), two competing prime contractors will begin development of separate NGST architectures, and the ISIM IPT will develop two ISIM designs corresponding to these architectures. Down selection to a single design will occur during mid 2001. The ISIM team welcomes science community feedback. Contact the IPT lead: Matt Greenhouse: matt@stars.gsfc.nasa.gov.

  9. DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

    Science.gov (United States)

    Deshpande, V.; Djara, V.; O'Connor, E.; Hashemi, P.; Balakrishnan, K.; Caimi, D.; Sousa, M.; Czornomaz, L.; Fompeyrine, J.

    2017-02-01

    We report the first RF characterization of short-channel replacement metal gate (RMG) InGaAs-OI nFETs built in a 3D monolithic (3DM) CMOS process. This process features RMG InGaAs-OI nFET top layer and SiGe-OI fin pFET bottom layer. We demonstrate state-of-the-art device integration on both levels. The bottom layer SiGe-OI pFETs are fabricated with a Gate-First (GF) process with fins and featuring epitaxial raised source drain (RSD) as well as silicide contact layer. The top layer InGaAs nFETs are fabricated with a RMG process featuring a self-aligned epitaxial raised source drain (RSD). We show that the 3D monolithic integration scheme does not degrade the performance of the bottom SiGe-OI pFETs owing to an optimized thermal budget for the top InGaAs nFETs. From the RF characterizations performed (post-3D monolithic process) on multifinger-gate InGaAs-OI nFETs, we extract a cut-off frequency (Ft) of 16.4 GHz at a gate-length (Lg) of 120 nm. Measurements on various gate lengths shows increasing cut-off frequency with decreasing gate-length.

  10. Monolithic integrated system with an electrowetting-on-dielectric actuator and a film-bulk-acoustic-resonator sensor

    Science.gov (United States)

    Zhang, Menglun; Cui, Weiwei; Chen, Xuejiao; Wang, Chao; Pang, Wei; Duan, Xuexin; Zhang, Daihua; Zhang, Hao

    2015-02-01

    Although digital microfluidics has shown great potential in a wide range of applications, a lab-on-a-chip with integrated digital droplet actuators and powerful biochemical sensors is still lacking. To address the demand, a fully integrated chip with electrowetting-on-dielectric (EWOD) and a film bulk acoustic resonator (FBAR) sensor is introduced, where an EWOD actuator manipulates digital droplets and the FBAR sensor detects the presence of substances in the droplets, respectively. The piezoelectric layer of the FBAR sensor and the dielectric layer of the EWOD share the same aluminum nitride (AlN) thin film, which is a key factor to achieve the full integration of the two completely different devices. The liquid droplets are reliably managed by the EWOD actuator to sit on or move off the FBAR sensor precisely. Sessile drop experiments and limit of detection (LOD) experiments are carried out to characterize the EWOD actuator and the FBAR sensor, respectively. Taking advantage of the digital droplet operation, a ‘dry sensing mode’ of the FBAR sensor in the lab-on-a-chip microsystem is proposed, which has a much higher signal to noise ratio than the conventional ‘wet sensing mode’. Hg2+ droplets with various concentrations are transported and sensed to demonstrate the capability of the integrated system. The EWOD-FBAR chip is expected to play an important role in many complex lab-on-a-chip applications.

  11. HDU Pressurized Excursion Module (PEM) Prototype Systems Integration

    Science.gov (United States)

    Gill, Tracy R.; Kennedy, Kriss; Tri, Terry; Toups, Larry; Howe, A. Scott

    2010-01-01

    The Habitat Demonstration Unit (HDU) project team constructed an analog prototype lunar surface laboratory called the Pressurized Excursion Module (PEM). The prototype unit subsystems were integrated in a short amount of time, utilizing a skunk-works approach that brought together over 20 habitation-related technologies from a variety of NASA centers. This paper describes the system integration strategies and lessons learned, that allowed the PEM to be brought from paper design to working field prototype using a multi-center team. The system integration process included establishment of design standards, negotiation of interfaces between subsystems, and scheduling fit checks and installation activities. A major tool used in integration was a coordinated effort to accurately model all the subsystems using CAD, so that conflicts were identified before physical components came together. Some of the major conclusions showed that up-front modularity that emerged as an artifact of construction, such as the eight 45 degree "pie slices" making up the module whose steel rib edges defined structural mounting and loading points, dictated much of the configurational interfaces between the major subsystems and workstations. Therefore, 'one of the lessons learned included the need to use modularity as a tool for organization in advance, and to work harder to prevent non-critical aspects of the platform from dictating the modularity that may eventually inform the fight system.

  12. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao

    2016-01-25

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  13. Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser.

    Science.gov (United States)

    Moskalenko, Valentina; Latkowski, Sylwester; Tahvili, Saeed; de Vries, Tjibbe; Smit, Meint; Bente, Erwin

    2014-11-17

    In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

  14. Robotic Tactile Sensors Fabricated from a Monolithic Silicon Integrated Circuit and a Piezoelectric Polyvinylidene Fluoride Thin Film

    Science.gov (United States)

    1991-12-01

    quartz crystals has been in the communications industry , where the crystals were used in very selective band-pass filters in lbroad-bland carrier...PVDF on .Silicon Integrated Circuit."* Sensors and A4ctuators, 27:. 167-172 (191). 86. Park, 1K. and others. "’A PVDF Tactile Sensor for Industrial ...G. E. Neville. -Jr. "The Induced Vibration Touch Sensor - A New Dynamic Touch Sensing Systemn," Robotica , 4: 27-31 (1986). 88. Paul. C. R. and S. A

  15. String Functions for Affine Lie Algebras Integrable Modules

    Directory of Open Access Journals (Sweden)

    Petr Kulish

    2008-12-01

    Full Text Available The recursion relations of branching coefficients kξ(μ for a module Lg¯ hμ reduced to a Cartan subalgebra h are transformed in order to place the recursion shifts γ Î Γa Ì h into the fundamental Weyl chamber. The new ensembles FΨ (the ''folded fans'' of shifts were constructed and the corresponding recursion properties for the weights belonging to the fundamental Weyl chamber were formulated. Being considered simultaneously for the set of string functions (corresponding to the same congruence class Ξv of modules the system of recursion relations constitute an equation M(u Ξv m(u μ = δ(u μ where the operator M(u Ξv is an invertible matrix whose elements are defined by the coordinates and multiplicities of the shift weights in the folded fans FΨ and the components of the vector m(u μ are the string function coefficients for Lμ enlisted up to an arbitrary fixed grade u. The examples are presented where the string functions for modules of g = A2(1 are explicitly constructed demonstrating that the set of folded fans provides a compact and effective tool to study the integrable highest weight modules.

  16. 单片集成微波/射频功率放大器技术进展%Progress in Monolithic Integrated Microwave/RF Power Amplifier

    Institute of Scientific and Technical Information of China (English)

    李强; 严利人; 周卫; 张伟

    2011-01-01

    As wireless communication market increases, monolithic integrated microwave/RF power amplifier (MMIC PA) plays a more and more important role in 3G and/or 4G systems. Traditional circuits used in mono-stage amplifiers are reviewed, together with their pros and cons. Architectures, such as the Doherty circuitry, EER (Envelope Elimination and Restoration) technology, LINC, etc. , are also discussed. Generally, these technologies may be used to improve linearity and efficiency of microwave power amplifier. Currently, some system-level linearization techniques have also been utilized. The overview may serve as a useful groundwork for those who are designing MMIC Pas.%回顾了一些用于微波单级功率放大器的传统技术方案,讨论了各自的优缺点.从电路模块的角度,总结了若干兼顾功放线性度和效率指标的典型电路拓扑形式,包括Doherty电路、包络消除与恢复(EER)技术、LINC技术等,并总结了当前主要采用的基于电路系统层面的微波射频功放线性化方案.在此基础上,列举评点了文献中一些典型功放的电路特点和性能指标,可为设计和制造人员提供有益参考.

  17. Integrated Design and Simulation of Tunable, Multi-State Structures Fabricated Monolithically with Multi-Material 3D Printing

    Science.gov (United States)

    Chen, Tian; Mueller, Jochen; Shea, Kristina

    2017-01-01

    Multi-material 3D printing has created new opportunities for fabricating deployable structures. We design reversible, deployable structures that are fabricated flat, have defined load bearing capacity, and multiple, predictable activated geometries. These structures are designed with a hierarchical framework where the proposed bistable actuator serves as the base building block. The actuator is designed to maximise its stroke length, with the expansion ratio approaching one when serially connected. The activation force of the actuator is parameterised through its joint material and joint length. Simulation and experimental results show that the bistability triggering force can be tuned between 0.5 and 5.0 N. Incorporating this bistable actuator, the first group of hierarchical designs demonstrate the deployment of space frame structures with a tetrahedron module consisting of three active edges, each containing four serially connected actuators. The second group shows the design of flat structures that assume either positive or negative Gaussian curvature once activated. By flipping the initial configuration of the unit actuators, structures such as a dome and an enclosure are demonstrated. A modified Dynamic Relaxation method is used to simulate all possible geometries of the hierarchical structures. Measured geometries differ by less than 5% compared to simulation results. PMID:28361891

  18. Integrated optics bus access module for intramachine communication

    Science.gov (United States)

    Karioja, Pentti; Tammela, Simo K. T.; Hannula, Tapio

    1991-12-01

    The feasibility of a passive bidirectional fiber optic bus and the packaging considerations of a bus access module have been studied. The bus uses 110/125 micrometers HCS fiber and passive integrated optic couplers for bus access. The access couplers are asymmetric and were fabricated using a Ag-Na ion exchange process. The asymmetry of the coupler was 5 dB, the launch loss to the bus was 6 dB and the tap-off loss to the node was 11 dB. With the integrated optics coupler it is possible to connect 6 nodes to the bidirectional bus. It is also possible to realize a simple, easy-to-use, and reliable bus access module for intramachine communication. The integrated optics coupler, a LED chip, and a PIN-diode chip and transceiver electronics are packaged in an electrical connector with a two-fiber optical cable pigtail. Active and passive components are butt coupled to the coupler. The 0.5 dB alignment tolerances for the fiber pigtails, the LED, and the PIN-diode chips are +/- 5 micrometers .

  19. Reconfigurable optical switches with monolithic electrical-to-optical interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, J.; Zhou, P. [New Mexico Univ., Albuquerque, NM (United States). Center for High Technology Materials; Zolper, J.C.; Lear, K.L.; Vawter, G.A. [Sandia National Labs., Albuquerque, NM (United States); Leibenguth, R.E.; Adams, A.C. [AT and T Bell Labs., Breinigsville, PA (United States)

    1994-03-01

    Vertical cavity surface-emitting lasers (VCSELs) can be integrated with heterojunction phototransistors (HPTs) and heterojunction bipolar transistors (HBTs) on the same wafer to form high speed optical and optoelectronic switches, respectively, that can be optically or electrically addressed. This permits the direct communication and transmission of data between distributed electronic processors through an optical switching network. The experimental demonstration of an integrated optoelectronic HBT/VCSEL switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a VCSEL is described below, using the same epilayer structure upon which binary HPT/VCSEL optical switches are also built. The monolithic HBT/VCSEL switch has high current gain, low power dissipation, and a high optical to electrical conversion efficiency. Its modulation has been measured and modeled.

  20. NGST Yardstick Integrated Science Instrument Module (ISIM) Feasibility Study

    Science.gov (United States)

    Greenhouse, M. A.; Dipirro, M.; Federline, B.; Gardner, Jonathan P.; Guy, P.; Hagopian, J.; Hein, J.; Jurotich, M.; Lawrence, J.; Martineau, B.; Mather, J. C.; Mentzell, E.; Satyapal, S.; Stanley, D.; Teplitz, H. I.; Travis, J.; Bely, P.; Petro, L. D.; Stockman, P.; Burg, R.; Bitzel, R.

    1998-12-01

    We display portions of the baseline design concept for the NGST Integrated Science Instrument Module (ISIM). This ISIM design is under ongoing development for integration with the "Yardstick" and other NGST 8 m architectures that are intended for packaging in an EELV or Ariane 5 meter class fairing. The goals of this activity are to: [1] demonstrate mission science feasibility, [2] identify ISIM technology challenge areas, [3] assess ISIM engineering and cost feasibility, [5] identify ISIM/NGST interface constraints, and [6] enable smart customer procurement of the ISIM. In this poster, we display a snap shot of work in progress including: optical design, opto-mechanical layout, thermal modeling, focal plane array design, and electronics design. Ongoing progress can be monitored via ISIM team web site: http://ngst.gsfc.nasa.gov/

  1. Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500

  2. Nanosecond monolithic CMOS readout cell

    Science.gov (United States)

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  3. Self-Dual Integral Normal Bases and Galois Module Structure

    CERN Document Server

    Pickett, Erik Jarl

    2010-01-01

    Let $N/F$ be an odd degree Galois extension of number fields with Galois group $G$ and rings of integers ${\\mathfrak O}_N$ and ${\\mathfrak O}_F=\\bo$ respectively. Let $\\mathcal{A}$ be the unique fractional ${\\mathfrak O}_N$-ideal with square equal to the inverse different of $N/F$. Erez has shown that $\\mathcal{A}$ is a locally free ${\\mathfrak O}[G]$-module if and only if $N/F$ is a so called weakly ramified extension. There have been a number of results regarding the freeness of $\\mathcal{A}$ as a $\\Z[G]$-module, however this question remains open. In this paper we prove that $\\mathcal{A}$ is free as a $\\Z[G]$-module assuming that $N/F$ is weakly ramified and under the hypothesis that for every prime $\\wp$ of ${\\mathfrak O}$ which ramifies wildly in $N/F$, the decomposition group is abelian, the ramification group is cyclic and $\\wp$ is unramified in $F/\\Q$. We make crucial use of a construction due to the first named author which uses Dwork's exponential power series to describe self-dual integral normal b...

  4. Attention Modulates the Neural Processes Underlying Multisensory Integration of Emotion

    Directory of Open Access Journals (Sweden)

    Hao Tam Ho

    2011-10-01

    Full Text Available Integrating emotional information from multiple sensory modalities is generally assumed to be a pre-attentive process (de Gelder et al., 1999. This assumption, however, presupposes that the integrative process occurs independent of attention. Using event-potentials (ERP the present study investigated whether the neural processes underlying the integration of dynamic facial expression and emotional prosody is indeed unaffected by attentional manipulations. To this end, participants were presented with congruent and incongruent face-voice combinations (eg, an angry face combined with a neutral voice and performed different two-choice tasks in four consecutive blocks. Three of the tasks directed the participants' attention to emotion expressions in the face, the voice or both. The fourth task required participants to attend to the synchronicity between voice and lip movements. The results show divergent modulations of early ERP components by the different attentional manipulations. For example, when attention was directed to the face (or the voice, incongruent stimuli elicited a reduced N1 as compared to congruent stimuli. This effect was absent, when attention was diverted away from the emotionality in both face and voice suggesting that the detection of emotional incongruence already requires attention. Based on these findings, we question whether multisensory integration of emotion occurs indeed pre-attentively.

  5. Transparent building-integrated PV modules. Phase 1: Comprehensive report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-09-28

    This Comprehensive Report encompasses the activities that have been undertaken by Kiss + Cathcart, Architects, in conjunction with Energy Photovoltaics, Incorporated (EPV), to develop a flexible patterning system for thin-film photovoltaic (PV) modules for building applications. There are two basic methods for increasing transparency/light transmission by means of patterning the PV film: widening existing scribe lines, or scribing a second series of lines perpendicular to the first. These methods can yield essentially any degree of light transmission, but both result in visible patterns of light and dark on the panel surface. A third proposed method is to burn a grid of dots through the films, independent of the normal cell scribing. This method has the potential to produce a light-transmitting panel with no visible pattern. Ornamental patterns at larger scales can be created using combinations of these techniques. Kiss + Cathcart, Architects, in conjunction with EPV are currently developing a complementary process for the large-scale lamination of thin-film PVs, which enables building integrated (BIPV) modules to be produced in sizes up to 48 in. x 96 in. Flexible laser patterning will be used for three main purposes, all intended to broaden the appeal of the product to the building sector: To create semitransparent thin-film modules for skylights, and in some applications, for vision glazing.; to create patterns for ornamental effects. This application is similar to fritted glass, which is used for shading, visual screening, graphics, and other purposes; and to allow BIPV modules to be fabricated in various sizes and shapes with maximum control over electrical characteristics.

  6. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-10-27

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  7. Eigenpolarization theory of monolithic nonplanar ring oscillators

    Science.gov (United States)

    Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.

    1989-01-01

    Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.

  8. Integrated Design Engineering Analysis (IDEA) Environment - Aerodynamics, Aerothermodynamics, and Thermal Protection System Integration Module

    Science.gov (United States)

    Kamhawi, Hilmi N.

    2011-01-01

    This report documents the work performed during from March 2010 October 2011. The Integrated Design and Engineering Analysis (IDEA) environment is a collaborative environment based on an object-oriented, multidisciplinary, distributed environment using the Adaptive Modeling Language (AML) as the underlying framework. This report will focus on describing the work done in the area of extending the aerodynamics, and aerothermodynamics module using S/HABP, CBAERO, PREMIN and LANMIN. It will also detail the work done integrating EXITS as the TPS sizing tool.

  9. Monolithically Integrated Micro Flapping Vehicles

    Science.gov (United States)

    2012-08-01

    Mechanical Logic • Memory Mm-Scale Ground Mobility Actuation & Mechanisms Ultrasonic Motors Reversible Adhesion Platform Design...MEMS Mm-Scale Ground Mobility PiezoMEMS Haltere Actuation & Mechanisms Ultrasonic Motors Reversible Adhesion Platform Design Flapping

  10. Gait Modulation in C. elegans: An Integrated Neuromechanical Model.

    Science.gov (United States)

    Boyle, Jordan H; Berri, Stefano; Cohen, Netta

    2012-01-01

    Equipped with its 302-cell nervous system, the nematode Caenorhabditis elegans adapts its locomotion in different environments, exhibiting so-called swimming in liquids and crawling on dense gels. Recent experiments have demonstrated that the worm displays the full range of intermediate behaviors when placed in intermediate environments. The continuous nature of this transition strongly suggests that these behaviors all stem from modulation of a single underlying mechanism. We present a model of C. elegans forward locomotion that includes a neuromuscular control system that relies on a sensory feedback mechanism to generate undulations and is integrated with a physical model of the body and environment. We find that the model reproduces the entire swim-crawl transition, as well as locomotion in complex and heterogeneous environments. This is achieved with no modulatory mechanism, except via the proprioceptive response to the physical environment. Manipulations of the model are used to dissect the proposed pattern generation mechanism and its modulation. The model suggests a possible role for GABAergic D-class neurons in forward locomotion and makes a number of experimental predictions, in particular with respect to non-linearities in the model and to symmetry breaking between the neuromuscular systems on the ventral and dorsal sides of the body.

  11. Gait modulation in C. elegans: An integrated neuromechanical model

    Directory of Open Access Journals (Sweden)

    Jordan Hylke Boyle

    2012-03-01

    Full Text Available Equipped with its 302-cell nervous system, the nematode Caenorhabditis elegans adapts its locomotion in different environments, exhibiting so-called swimming in liquids and crawling on dense gels. Recent experiments have demonstrated that the worm displays the full range of intermediate behaviors when placed in intermediate environments. The continuous nature of this transition strongly suggests that these behaviors all stem from modulation of a single underlying mechanism. Wepresent a model of C. elegans forward locomotion that includes a neuromuscular control system that relies on a sensory feedback mechanism to generate undulations and is integrated with a physical model of the body and environment. We find that the model reproduces the entire swim-crawl transition, as well as locomotion in complex and heterogeneous environments. This is achieved with no modulatory mechanism, except via the proprioceptive response to the physical environment. Manipulations of the model are used to dissect the proposed pattern generation mechanism and its modulation. The model suggests a possible role for GABAergic D-class neurons in forward locomotion and makes a number of experimentalpredictions, in particular with respect to nonlinearities in the model and to symmetry breaking between the neuromuscular systems on the ventral and dorsal sides of the body.

  12. Significant Performance Advantage of Electroabsorption Modulator Integrated Distributed Feedback Laser (EML) Transmitter in Transporting Multicarrier QAM Signals

    NARCIS (Netherlands)

    Chand, Naresh; Bakker, Laurens; Veen, van Dora; Yadvish, Robert D.

    2001-01-01

    Data are presented that show that, for transporting quadrature amplitude modulated (QAM) radiofrequency (RF) subcarriers in suboctave frequency range, electroabsorption modulator integrated distributed feedback lasers (EMLs) can he modulated with significantly higher (2.5 times) modulation index wit

  13. High-performance electroabsorption modulator

    Science.gov (United States)

    Wei, Zhang; Jiaoqing, Pan; Hongliang, Zhu; Huan, Wang; Wei, Wang

    2009-09-01

    A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

  14. Transparent electrode requirements for thin film solar cell modules

    KAUST Repository

    Rowell, Michael W.

    2011-01-01

    The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power conversion efficiency. Reflection, absorption, resistive losses and lost active area either from the scribed interconnect region in monolithically integrated modules or from the shadow losses of a metal grid in standard modules typically reduce the efficiency by 10-25%. Here, we perform calculations to show that a competitive TC must have a transparency of at least 90% at a sheet resistance of less than 10 Ω/sq (conductivity/absorptivity ≥ 1 Ω -1) for monolithically integrated modules. For standard modules, losses are much lower and the performance of alternative lower cost TC materials may already be sufficient to replace conducting oxides in this geometry. © 2011 The Royal Society of Chemistry.

  15. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  16. Embedded-monolith armor

    Science.gov (United States)

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  17. Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of-art and perspectives

    Science.gov (United States)

    Sarafis, Panagiotis; Nassiopoulou, Androula G.

    2017-09-01

    The increasing need for miniaturization, reliability, and cost efficiency in modern telecommunications has boosted the idea of system-on-chip integration, incorporating the RF front-end circuitry and the passive elements such as RF transmission lines, inductors, antennas, and filters. However, the performance of the passive elements of these circuits is highly degraded when integrated on standard CMOS Si, due to its low resistivity. Porous silicon (PSi) has emerged as a promising local substrate material for the on-chip monolithic integration of high performance passive RF and mm-wave devices, because it combines high resistivity and low permittivity along with CMOS compatibility. This review paper aims at summarizing the obtained results so far in the above area, including transmission lines, inductors, filters, and miniaturized antennas, monolithically integrated on porous Si in a CMOS-compatible environment. In this respect, we first present the requirements for a low-loss, CMOS-compatible RF substrates and we then argue on how PSi fulfills the set requirements. Then, we present the methods used so far to extract the dielectric properties of PSi, which are necessary inputs for designing RF devices. The performance of different passive RF devices such as coplanar waveguides, inductors, filters, and antennas on the local porous Si substrate is then reviewed and compared with the performance of other state-of-the-art RF passive devices based on different technologies. Finally, we discuss the progress made so far towards the industrialization of PSi local RF substrate technology and the challenges that are currently faced towards this objective.

  18. The James Webb Space Telescope Integrated Science Instrument Module

    Science.gov (United States)

    Greenhouse, M. A.; Boyce, L. A.; Glazer, S. D.; Johnson, E. L.; McCloskey, J. C.; Sullivan, P. C.; Voyton, M. F.

    2005-12-01

    In this poster, we describe the major design features of the James Webb Space Telescope (JWST) Integrated Science Instrument Module (ISIM). The JWST mission is under development by NASA in partnership with the European and Canadian Space Agencies for launch during 2013. The JWST is designed to enable a five year science mission that is focused on four themes: [1] observation of the first luminous objects after the Big Bang, [2] the assembly of these objects into galaxies, [3] the birth of stars and planetary systems, and [4] the formation of planets and the origins of life. The above science themes require high sensitivity and HST-like angular resolution over the near- to mid-infrared spectrum. A 40 K cryogenic radiatively cooled telescope with a 25 m2 collecting area was selected to meet these requirments. A mission architecture involving a Lissajous orbit about the Earth-Sun L2 point was chosen to meet optical stability and data downlink requirments. A modular flight segment architecture was selected to enable incremental integration and test of the cryogenic payload. The ISIM is one key feature of this modular architecture that enables a feasible cryogenic test program. The ISIM element is the science instrument payload of the observatory. It contains 70 million infrared detector pixels allocated among four science instrument systems and a fine guidance sensor system. Brief instrument descriptions are available at: www.stsci.edu/jwst/docs/flyers. The ISIM also contains a passive 40 K thermal control system, a 6 K cryo-cooler system, a command and data handling system, a flight software system, and an optical metering structure system. The ISIM element is responsible for acquisition of the JWST science data, fine guidance data for telescope pointing control, and wavefront sensing data for in-flight adjustment of the telescope optics. Further information about the JWST mission is available at: www.jwst.nasa.gov.

  19. Module-Integrated Power Converters Based on Universal Dock

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, Patrick; Rodriguez, Fernando

    2015-03-13

    Solar power installations using alternating current photovoltaic (ACPV) modules have significant cost and performance advantages over systems using conventional solar modules and string inverters. ACPV modules have improved energy harvest due to module-level power point tracking and redundancy. More importantly, ACPV modules are easier and cheaper to install, lowering the total installed cost, indirect costs, and barriers to market entry. Furthermore, ACPV modules have communications and data logging capability, yielding module-level telemetry data that is useful in site diagnostics and other data applications. The products of these efforts were threefold. First, an advanced microinverter power topology was developed, modeled, simulated, and tested. Second, new microinverter enclosure concepts were developed and tested. Third, a new ACPV module prototype was constructed, combining the power topology and the enclosure concepts. SolarBridge filed for patents in each of these areas and is transitioning the project from a concept phase to full development.

  20. Monolithic pixel detectors for high energy physics

    CERN Document Server

    Snoeys, W

    2013-01-01

    Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio ( Q / C ). It is shown that monolithic detectors can achieve Q / C for low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining suf fi cient Q / C , collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.

  1. Integrated terahertz optoelectronics

    Science.gov (United States)

    Liang, Guozhen; Wang, Qi Jie

    2016-11-01

    Currently, terahertz (THz) optical systems are based on bulky free-space optics. This is due to the lack of a common platform onto which different THz components, e.g., source, waveguide, modulator and detector, can be monolithically integrated. With the development of THz quantum cascade laser (QCL), it has been realized that the QCL chip may be such a platform for integrated THz photonics. Here, we report our recent works where the THz QCL is integrated with passive or optoelectronic components. They are: 1) integrated graphene modulator with THz QCL achieving 100% modulation depth and fast speed; 2) phase-locked THz QCL with integrated plasmonic waveguide and subwavelength antennas realizing dynamically widely tunable polarizations.

  2. GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

    KAUST Repository

    Shen, Chao

    2017-01-30

    A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

  3. InGaAsP Buried Channel Waveguide For Electroabsorption Modulation

    Science.gov (United States)

    Lin, S. C.; Chin, M. K.; Jing, X. L.; Walpita, L. M.; Yu, P. K. L.; Chang, W. S.

    1987-11-01

    External modulation of 1.3 μm laser light with LPE grown InGaAsP/InP buried channel waveguides is presented. The waveguide is compatible with single mode fiber and the planar structure has potential for monolithic integration. In this paper, a numerical analysis of electroabsorption (EA) modulation for the waveguide modulator shows interesting results which may help the design of this device.

  4. Monolithic MACS micro resonators

    Science.gov (United States)

    Lehmann-Horn, J. A.; Jacquinot, J.-F.; Ginefri, J. C.; Bonhomme, C.; Sakellariou, D.

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1 /√{ P } is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4 mm rotor at 500 MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials.

  5. The MONOLITH prototype

    CERN Document Server

    Ambrosio, M; Bencivenni, G; Candela, A M; Chiarini, A; Chignoli, F; De Deo, M; D'Incecco, M; Gerli, S; Giusti, P; Gómez, F; Gustavino, C; Lindozzi, M; Mannocchi, G; Menghetti, H; Morello, C; Murtas, F; Paoluzzi, G; Pilastrini, R; Redaelli, N G; Santoni, M; Sartorelli, G; Terranova, F; Trinchero, G C

    2000-01-01

    MONOLITH (Massive Observatory for Neutrino Oscillation or LImits on THeir existence) is the project of an experiment to study atmospheric neutrino oscillations with a massive magnetized iron detector. The baseline option is a 34 kt iron detector based on the use of about 50000 m/sup 2/ of the glass Resistive Plate Chambers (glass RPCs) developed at the Laboratori Nazionali del Gran Sasso (LNGS). An 8 ton prototype equipped with 23 m/sup 2/ of glass RPC has been realized and tested at the T7-PS beam at CERN. The energy resolution for pions follows a 68%/ square root (E(GeV))+2% law for orthogonally incident particles, in the energy range between 2 and 10 GeV. The time resolution and the tracking capability of the glass RPC are suitable for the MONOLITH experiment. (7 refs).

  6. Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures

    Science.gov (United States)

    Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio

    2017-06-01

    Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al2O3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10-3 Ω cm-1, 11 cm2 V-1 s-1, and 1.62 × 1020 cm-3, resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.

  7. Development of Vacuum Vessel Design and Analysis Module for CFETR Integration Design Platform

    Directory of Open Access Journals (Sweden)

    Chen Zhu

    2016-01-01

    Full Text Available An integration design platform is under development for the design of the China Fusion Engineering Test Reactor (CFETR. It mainly includes the integration physical design platform and the integration engineering design platform. The integration engineering design platform aims at performing detailed engineering design for each tokamak component (e.g., breeding blanket, divertor, and vacuum vessel. The vacuum vessel design and analysis module is a part of the integration engineering design platform. The main idea of this module is to integrate the popular CAD/CAE software to form a consistent development environment. Specifically, the software OPTIMUS provides the approach to integrate the CAD/CAE software such as CATIA and ANSYS and form a design/analysis workflow for the vacuum vessel module. This design/analysis workflow could automate the process of modeling and finite element (FE analysis for vacuum vessel. Functions such as sensitivity analysis and optimization of geometric parameters have been provided based on the design/analysis workflow. In addition, data from the model and FE analysis could be easily exchanged among different modules by providing a unifying data structure to maintain the consistency of the global design. This paper describes the strategy and methodology of the workflow in the vacuum vessel module. An example is given as a test of the workflow and functions of the vacuum vessel module. The results indicate that the module is a feasible framework for future application.

  8. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

    Science.gov (United States)

    Yonghe, Chen; Xuefeng, Zheng; Jincheng, Zhang; Xiaohua, Ma; Yue, Hao

    2016-05-01

    A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of -6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of -0.5 and -5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit. Project supported by the National Natural Science Foundation of China (No. 61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201206), and the Program for New Century Excellent Talents in University (No. NCET-12-0915).

  9. 高开孔率染料敏化太阳能电池一体化模块及其性能优化%Monolithic Module Design and Behavior Improvement of Large Area Dye-sensitized Solar Cell

    Institute of Scientific and Technical Information of China (English)

    马辉; 刘志勇; 鲁玉明; 金晓艳; 蔡传兵

    2011-01-01

    A new type of simple and monolithic large size dye-sensitized solar cell (DSC) module was designed with 85% aperture ratio (ratio of active area to total area), which was much higher than that of traditional series and parallel modules. The present module reduces the transfer resistance through the electroplated nickel grid on F-doped SnO2 (FTO) of anode as well as the nickel film on the FTO of counter electrode. The nickel grid and film are inside the cell and the separation of the cell is not required, which is useful to reduce the block part of light and beneficial to improve the harvest of light energy. The photoelectric conversion efficiency (n) with the active area of 510 mm2 reaches 3.00% (AM 1.5, 100 mW/cm2) and the fill factor (FF) is 0.594, meanwhile the rj and FF of DSC without nickel layer modification is only 0.537% and 0.251. So it is obvious that this novel designed module is very effective in the performance improvement. The underlying mechanism is understood based on the measurement of the electrochemical impedance spectroscopy (EIS) as well as the quality check of nickel film by scanning electron microscopy (SEM) and X-ray diffraction (XRD).%本实验设计了一种简单有效的一体化大尺度染料敏化太阳能电池(DSC)模块,开孔率(有效面积与总面积之比)高达85%,远高于传统的串联和并联模块设计.该设计采用在光阳极导电玻璃表面电镀镍栅极和对电极导电玻璃表面电镀镍薄膜修饰来降低电池传输电阻.有效面积为510 mm2的电池模块光电转换效率η达到3.00%(AM l.5,1 00 mW/cm2),填充因子(FF)为0.594,与未镀镍的样品(η为0.537%,FF为0.251)相比,性能显著提高.并利用阻抗谱对大面积性能改善进行了解释,还利用SEM、XRD等分析了电镀镍薄膜的质量.

  10. On stochastic integration for volatility modulated Brownian-driven Volterra processes via white noise analysis

    DEFF Research Database (Denmark)

    E. Barndorff-Nielsen, Ole; Benth, Fred Espen; Szozda, Benedykt

    This paper generalizes the integration theory for volatility modulated Brownian-driven Volterra processes onto the space G* of Potthoff-Timpel distributions. Sufficient conditions for integrability of generalized processes are given, regularity results and properties of the integral are discussed...

  11. On stochastic integration for volatility modulated Brownian-driven Volterra processes via white noise analysis

    DEFF Research Database (Denmark)

    Barndorff-Nielsen, Ole E.; Benth, Fred Espen; Szozda, Benedykt

    This paper generalizes the integration theory for volatility modulated Brownian-driven Volterra processes onto the space G∗ of Potthoff--Timpel distributions. Sufficient conditions for integrability of generalized processes are given, regularity results and properties of the integral are discussed...

  12. Integration of solar modules in buildings. Die Integration von Solarmodulen in Gebaeuden

    Energy Technology Data Exchange (ETDEWEB)

    Laukamp, H.; Bopp, G.; Schmid, J.; Sick, F. (Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany)); Leithold, W.; Schneider, G.P. (Solare Systemtechnik GmbH, Freiburg im Breisgau (Germany))

    1992-01-01

    Buildings have a big potential of surfaces which can be used for the installation of solar heating systems. If this potential would be fully used 30% of the electric power demand could be covered. From the aesthetic point of view one should prefer plant concepts where the solar generator is integrated in the building's cover. Non-optimal orientation and high temperature of the solar generator lead to losses of the energy gain which are in the range of less than 10%. For framed and unframed solar modules exist a lot of installation systems. Two of them are presented in the paper. Constructive measures for the sealing of the solar generator are explained ensuring the tightness of the roof by the principle of controlled drainage. (orig.).

  13. Integration of active optical components

    Science.gov (United States)

    Wipiejewski, Torsten; Akulova, Yuliya A.; Fish, Gregory A.; Schow, Clint L.; Koh, Ping; Karim, Adil; Nakagawa, Shigeru; Dahl, Anders; Kozodoy, Peter; Matson, Alex; Short, Bradley W.; Turner, Chuck M.; Penniman, Steven; Larson, Michael C.; Coldren, Christopher W.; Coldren, Larry A.

    2003-06-01

    Integration of active optical components typically serves five goals: enhanced performance, smaller space, lower power dissipation, higher reliability, and lower cost. We are manufacturing widely tunable laser diodes with an integrated high speed electro absorption modulator for metro and all-optical switching applications. The monolithic integration combines the functions of high power laser light generation, wavelength tuning over the entire C-band, and high speed signal modulation in a single chip. The laser section of the chip contains two sampled grating DBRs with a gain and a phase section between them. The emission wavelength is tuned by current injection into the waveguide layers of the DBR and phase sections. The laser light passes through an integrated optical amplifier before reaching the modulator section on the chip. The amplifier boosts the cw output power of the laser and provides a convenient way of power leveling. The modulator is based on the Franz-Keldysh effect for a wide band of operation. The common waveguide through all sections minimizes optical coupling losses. The packaging of the monolithically integrated chip is much simpler compared to a discrete or hybrid solution using a laser chip, an SOA, and an external modulator. Since only one optical fiber coupling is required, the overall packaging cost of the transmitter module is largely reduced. Error free transmission at 2.5Gbit/s over 200km of standard single mode fiber is obtained with less than 1dB of dispersion penalty.

  14. Monolithic silicon bolometers

    Science.gov (United States)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  15. Sensitivity optimization of a monolithic high-shock three-axis piezoresistive accelerometer with single sensing element

    Institute of Scientific and Technical Information of China (English)

    SONG Ping; LI QingZhou; LI KeJie

    2009-01-01

    There exist several difficulties in the design of monolithic high-shock three-axis accelerometer, such as high g overload, transverse overload and the cross coupling in three dimensions, etc. It is necessary to optimize the sensitivity to improve the performance of the accelerometer. For the monolithic high-shock three-axis accelerometer, the complexity of the sensitivity optimization is that it should consider not only the sensitivity difference between different axes but also the elimination of cross-coupling outputs, together with the natural frequency, structural integrity and high g overload. In this paper, the optimization process for decreasing the difference of the sensitivities between different axes of a monolithic high-shock three-axis piezoresistive accelerometer with single sensing element is established. The optimization is conducted in the condition of 100000 g acceleration by two methods-the method based on the optimization module of ANSYS and the ACO (ant colony optimiza-tion) method. The comparison between un-optimized and optimized models proves the efficiency of the optimization methods. In addition, the optimization results show that the ACO method combined with the FEA (finite element analysis) is much more efficient than the method based on the optimization module of ANSYS for the structural optimization problem. And the ACO method can be widely used in the optimization problem of the sensing elements with complicated structure.

  16. Waveguide Phase Modulator for Integrated Planar Lightwave Circuits in KTP Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I effort proposes the development of a potassium titanyl phosphate (KTP) waveguide phase modulator for future integration into a Planar Lightwave...

  17. Integrated Planar Lightwave Circuits for UV Generation and Phase Modulation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The primary goal of this SBIR effort is delivery of a compact, robust, highly efficient, fiber-coupled UV module to provide the required 355nm light for integration...

  18. Integration into Big Data: First Steps to Support Reuse of Comprehensive Toxicity Model Modules (SOT)

    Science.gov (United States)

    Data surrounding the needs of human disease and toxicity modeling are largely siloed limiting the ability to extend and reuse modules across knowledge domains. Using an infrastructure that supports integration across knowledge domains (animal toxicology, high-throughput screening...

  19. Integration into Big Data: First Steps to Support Reuse of Comprehensive Toxicity Model Modules (SOT)

    Science.gov (United States)

    Data surrounding the needs of human disease and toxicity modeling are largely siloed limiting the ability to extend and reuse modules across knowledge domains. Using an infrastructure that supports integration across knowledge domains (animal toxicology, high-throughput screening...

  20. Integrated High-Speed Digital Optical True-Time-Delay Modules for Synthetic Aperture Radars Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Crystal Research, Inc. proposes an integrated high-speed digital optical true-time-delay module for advanced synthetic aperture radars. The unique feature of this...

  1. Analogy-Integrated e-Learning Module: Facilitating Students' Conceptual Understanding

    Science.gov (United States)

    Florida, Jennifer

    2012-01-01

    The study deals with the development of an analogy-integrated e-learning module on Cellular Respiration, which is intended to facilitate conceptual understanding of students with different brain hemisphere dominance and learning styles. The module includes eight analogies originally conceptualized following the specific steps used to prepare…

  2. Analogy-Integrated e-Learning Module: Facilitating Students' Conceptual Understanding

    Science.gov (United States)

    Florida, Jennifer

    2012-01-01

    The study deals with the development of an analogy-integrated e-learning module on Cellular Respiration, which is intended to facilitate conceptual understanding of students with different brain hemisphere dominance and learning styles. The module includes eight analogies originally conceptualized following the specific steps used to prepare…

  3. Optical characterisation of semi-transparent PV modules for building integration

    OpenAIRE

    Moralejo Vázquez, Francisco José; Martín Chivelet, Nuria; Olivieri, Lorenzo; Caamaño Martín, Estefanía

    2014-01-01

    A complete characterisation of PV modules for building integration is needed in order to know their influence on the building’s global energy balance. Specifically, certain characteristic parameters should be obtained for each different PV module suitable for building integrated photovoltaics (BIPV), some by direct or indirect measurements at the laboratory, and others by monitoring the element performance mounted in real operating conditions. In the...

  4. Bioaffinity chromatography on monolithic supports

    NARCIS (Netherlands)

    Tetala, K.K.R.; Beek, van T.A.

    2010-01-01

    Affinity chromatography on monolithic supports is a powerful analytical chemical platform because it allows for fast analyses, small sample volumes, strong enrichment of trace biomarkers and applications in microchips. In this review, the recent research using monolithic materials in the field of bi

  5. Bioaffinity chromatography on monolithic supports

    NARCIS (Netherlands)

    Tetala, K.K.R.; Beek, van T.A.

    2010-01-01

    Affinity chromatography on monolithic supports is a powerful analytical chemical platform because it allows for fast analyses, small sample volumes, strong enrichment of trace biomarkers and applications in microchips. In this review, the recent research using monolithic materials in the field of bi

  6. A PET detector module with monolithic crystal, single end readout, SiPM array and high depth-of-interaction resolution

    Science.gov (United States)

    Zhang, H.; Zhou, R.; Yang, C.

    2016-08-01

    Depth of interaction (DOI) technology can improve the spatial resolution of nuclear medicine imaging system which uses scintillation detectors such as Positron Emission Tomography (PET). In this paper, a prototype detector module with DOI capability is established to make complementary characteristic tests on an existing method and to improve the experimental performance using the same method. We investigate the gamma incident surface and incident angle effects on the positioning method with our model in simulations and evaluate its 3-D positioning results in experiment. It shows that the positioning results are highly affected by the gamma incident surface and incident angle. The 137Cs energy resolution is 12.1% and the DOI resolution is estimated at 2.26 mm in average by our detector in experiment.

  7. Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May

    2016-04-01

    For the development of a metal-interconnection-free integration scheme for monolithic integration of InGaN/GaN light-emitting diodes (LEDs) and AlGaN/GaN high-electron-mobility transistors (HEMTs), a common buffer to achieve high brightness, low leakage current, and high breakdown in the integrated HEMT-LED device is essential. Different buffer structures have been investigated, and their impacts upon both the LED and HEMT parts of the HEMT-LED device have been analyzed. Results indicated that a GaN/AlN buffer structure is the most ideal to serve as a common buffer platform, offering both the excellent crystalline quality and superior buffer resistivity required by the HEMT-LED device. Growth of the AlN layer was particularly crucial for engineering the dislocation density, surface morphology, as well as resistivity of the buffer layer. Using the optimized GaN/AlN buffer structure, the LED part of the HEMT-LED device was improved, showing greatly enhanced light output power and suppressed reverse leakage current, while the breakdown characteristics of the HEMT part were also improved.

  8. p-Type MWT. Integrated cell and module technology

    Energy Technology Data Exchange (ETDEWEB)

    Tool, C.J.J.; Kossen, E.J.; Bennett, I.J.

    2013-10-15

    A major issue of concern in MWT solar cells is the increased leakage current at reversed bias voltage through the vias compared. At ECN we have been working on reducing this leakage current to levels comparable to H-pattern cells. In this study we present the results of this work. We further show the benefit of a combined cell and module design for MWT solar cells. At the cell level, MWT production costs per wafer are comparable with H-pattern while the cell output increases. At the module level this design results in a further increase of the power output.

  9. p-type MWT. Integrated Cell and Module Technology

    Energy Technology Data Exchange (ETDEWEB)

    Tool, C.J.J.; Kossen, E.J.; Bennett, I.J. [ECN Solar Energy, Petten (Netherlands)

    2013-03-15

    A major issue of concern in MWT (metal wrap-through) solar cells is the increased leakage current at reversed bias voltage through the vias compared. At ECN we have been working on reducing this leakage current to levels comparable to H-pattern cells. In this study we present the results of this work. We further show the benefit of a combined cell and module design for MWT solar cells. At the cell level, MWT production costs per wafer are comparable with H-pattern while the cell output increases. At the module level this design results in a further increase of the power output.

  10. Extended Leach Testing of Simulated LAW Cast Stone Monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Serne, R. Jeffrey [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Westsik, Joseph H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jung, H. B. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wang, Guohui [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-07-09

    This report describes the results from long-term laboratory leach tests performed at Pacific Northwest National Laboratory (PNNL) for Washington River Protection Solutions (WRPS) to evaluate the release of key constituents from monoliths of Cast Stone prepared with four simulated low-activity waste (LAW) liquid waste streams. Specific objectives of the Cast Stone long-term leach tests described in this report focused on four activities: 1. Extending the leaching times for selected ongoing EPA-1315 tests on monoliths made with LAW simulants beyond the conventional 63-day time period up to 609 days reported herein (with some tests continuing that will be documented later) in an effort to evaluate long-term leaching properties of Cast Stone to support future performance assessment activities. 2. Starting new EPA-1315 leach tests on archived Cast Stone monoliths made with four LAW simulants using two leachants (deionized water [DIW] and simulated Hanford Integrated Disposal Facility (IDF) Site vadose zone pore water [VZP]). 3. Evaluating the impacts of varying the iodide loading (starting iodide concentrations) in one LAW simulant (7.8 M Na Hanford Tank Waste Operations Simulator (HTWOS) Average) by manufacturing new Cast Stone monoliths and repeating the EPA-1315 leach tests using DIW and the VZP leachants. 4. Evaluating the impacts of using a non-pertechnetate form of Tc that is present in some Hanford tanks. In this activity one LAW simulant (7.8 M Na HTWOS Average) was spiked with a Tc(I)-tricarbonyl gluconate species and then solidified into Cast Stone monoliths. Cured monoliths were leached using the EPA-1315 leach protocol with DIW and VZP. The leach results for the Tc-Gluconate Cast Stone monoliths were compared to Cast Stone monoliths pertechnetate.

  11. Beat Gestures Modulate Auditory Integration in Speech Perception

    Science.gov (United States)

    Biau, Emmanuel; Soto-Faraco, Salvador

    2013-01-01

    Spontaneous beat gestures are an integral part of the paralinguistic context during face-to-face conversations. Here we investigated the time course of beat-speech integration in speech perception by measuring ERPs evoked by words pronounced with or without an accompanying beat gesture, while participants watched a spoken discourse. Words…

  12. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  13. Porous polymer monolithic col

    Directory of Open Access Journals (Sweden)

    Lydia Terborg

    2015-05-01

    Full Text Available A new approach has been developed for the preparation of mixed-mode stationary phases to separate proteins. The pore surface of monolithic poly(glycidyl methacrylate-co-ethylene dimethacrylate capillary columns was functionalized with thiols and coated with gold nanoparticles. The final mixed mode surface chemistry was formed by attaching, in a single step, alkanethiols, mercaptoalkanoic acids, and their mixtures on the free surface of attached gold nanoparticles. Use of these mixtures allowed fine tuning of the hydrophobic/hydrophilic balance. The amount of attached gold nanoparticles according to thermal gravimetric analysis was 44.8 wt.%. This value together with results of frontal elution enabled calculation of surface coverage with the alkanethiol and mercaptoalkanoic acid ligands. Interestingly, alkanethiols coverage in a range of 4.46–4.51 molecules/nm2 significantly exceeded that of mercaptoalkanoic acids with 2.39–2.45 molecules/nm2. The mixed mode character of these monolithic stationary phases was for the first time demonstrated in the separations of proteins that could be achieved in the same column using gradient elution conditions typical of reverse phase (using gradient of acetonitrile in water and ion exchange chromatographic modes (applying gradient of salt in water, respectively.

  14. W-band monolithic oscillator using InAlAs/InGaAs HEMT

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.; Tutt, M.; Ng, G. I.; Lai, R.

    1990-01-01

    A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.

  15. Standard Test Methods for Determining Mechanical Integrity of Photovoltaic Modules

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2009-01-01

    1.1 These test methods cover procedures for determining the ability of photovoltaic modules to withstand the mechanical loads, stresses and deflections used to simulate, on an accelerated basis, high wind conditions, heavy snow and ice accumulation, and non-planar installation effects. 1.1.1 A static load test to 2400 Pa is used to simulate wind loads on both module surfaces 1.1.2 A static load test to 5400 Pa is used to simulate heavy snow and ice accumulation on the module front surface. 1.1.3 A twist test is used to simulate the non-planar mounting of a photovoltaic module by subjecting it to a twist angle of 1.2°. 1.1.4 A cyclic load test of 10 000 cycles duration and peak loading to 1440 Pa is used to simulate dynamic wind or other flexural loading. Such loading might occur during shipment or after installation at a particular location. 1.2 These test methods define photovoltaic test specimens and mounting methods, and specify parameters that must be recorded and reported. 1.3 Any individual mech...

  16. On the Stability of a Double Integration Delta Modulator

    DEFF Research Database (Denmark)

    Nielsen, Palle Tolstrup

    1971-01-01

    A delta modulator with a second-order network in the feedback path is considered. For zero input signal the possible modes of oscillation are determined as a function of the zero of the linear network. The method could be employed with other types of feedback networks. A comparison is made...

  17. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  18. Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration

    Science.gov (United States)

    Hamoudi, A.; Rao, E. V. K.; Krauz, Ph.; Ramdane, A.; Ougazzaden, A.; Robein, D.; Thibierge, H.

    1995-11-01

    We investigated the potentiality of a phosphorus-doped silicon oxide (SiO:P) carrier-free disordering source for applications in photonic devices integration schemes. This is accomplished in three successive steps by employing an InGaAsP/InGaAsP structure with compressively strained wells and lattice-matched barriers designed for operation around ˜1.55 μm. First of all, we showed that the SiO:P encapsulant offers a good control over a wide range of disorder (blue shifts as high as ˜150 meV). Later on, the high optical quality of the disordered regions is demonstrated by detecting 300 K excitonic features in moderately blue-shifted (˜40 meV) samples. And, finally, a first attempt of its application in integration technology is made by realizing a monolithic composite of a distributed feedback laser and a quantum-confined stark effect electroabsorption modulator operating around 1.54 μm.

  19. Liquid nitrogen cooled integrated power electronics module with high current carrying capability and lower on resistance

    Science.gov (United States)

    Ye, Hua; Lee, Changwoo; Simon, Randy W.; Haldar, Pradeep; Hennessy, Michael J.; Mueller, Eduard K.

    2006-11-01

    This letter presents the development of high-performance integrated cryogenic power modules, where both driver components and power metal-oxide semiconductor field-effect transistors are integrated in a single package, to be used in a 50kW prototype cryogenic inverter operating at liquid nitrogen temperature. The authors have demonstrated a compact high-voltage, cryogenic integrated power module that exhibited more than 14 times improvement in on-resistance and continuous current carrying capability exceeding 40A. The modules are designed to operate at liquid nitrogen temperature with extreme thermal cycling. The power electronic modules are necessary components that provide control and switching for second generation, yttrium barium copper oxide-based high temperature superconductor devices including cables, motors, and generators.

  20. Hermeneutics framework: integration of design rationale and optimizing software modules

    NARCIS (Netherlands)

    Aksit, Mehmet; Malakuti Khah Olun Abadi, Somayeh

    To tackle the evolution challenges of adaptive systems, this paper argues on the necessity of hermeneutic approaches that help to avoid too early elimination of design alternatives. This visionary paper proposes the Hermeneutics Framework, which computationally integrates a design rationale

  1. Biobased monoliths for adenovirus purification.

    Science.gov (United States)

    Fernandes, Cláudia S M; Gonçalves, Bianca; Sousa, Margarida; Martins, Duarte L; Barroso, Telma; Pina, Ana Sofia; Peixoto, Cristina; Aguiar-Ricardo, Ana; Roque, A Cecília A

    2015-04-01

    Adenoviruses are important platforms for vaccine development and vectors for gene therapy, increasing the demand for high titers of purified viral preparations. Monoliths are macroporous supports regarded as ideal for the purification of macromolecular complexes, including viral particles. Although common monoliths are based on synthetic polymers as methacrylates, we explored the potential of biopolymers processed by clean technologies to produce monoliths for adenovirus purification. Such an approach enables the development of disposable and biodegradable matrices for bioprocessing. A total of 20 monoliths were produced from different biopolymers (chitosan, agarose, and dextran), employing two distinct temperatures during the freezing process (-20 °C and -80 °C). The morphological and physical properties of the structures were thoroughly characterized. The monoliths presenting higher robustness and permeability rates were further analyzed for the nonspecific binding of Adenovirus serotype 5 (Ad5) preparations. The matrices presenting lower nonspecific Ad5 binding were further functionalized with quaternary amine anion-exchange ligand glycidyltrimethylammonium chloride hydrochloride by two distinct methods, and their performance toward Ad5 purification was assessed. The monolith composed of chitosan and poly(vinyl) alcohol (50:50) prepared at -80 °C allowed 100% recovery of Ad5 particles bound to the support. This is the first report of the successful purification of adenovirus using monoliths obtained from biopolymers processed by clean technologies.

  2. Dual Adaptive Turbo Coded Modulation for Integrated Multimedia Service Transmission

    Institute of Scientific and Technical Information of China (English)

    左健存; 宋文涛; 罗汉文; 徐友云

    2004-01-01

    This paper proposes a cross-layer dual adaptive coded modulation architecture using turbo codes for mobile multimedia communication, which adapts to both the varying channel characteristics and the QoS of various multimedia services simultaneously to increase the average system throughput substantially. A pragmatic channeladaptive turbo coded modulation scheme, which comes within 2.5 Db of the Shannon limit, is optimally designed,and then a QoS-adaptive scheme is superimposed to build the dual adaptive architecture. Simulation results show that the novel dual adaption reduces the gap from the fading channel capacity to 2 Db when assuming different services occur in equal probability and the service duration follows exponential distribution.

  3. Field-effect transistor self-electrooptic effect device integrated photodiode, quantum well modulator and transistor

    Energy Technology Data Exchange (ETDEWEB)

    Miller, D.A.B.; Feuer, M.D.; Chang, T.Y.; Shunk, S.C.; Henry, J.E.; Burrows, D.J.; Chemla, D.S.

    1989-03-01

    The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark effect quantum well optical modulator and a metal-semiconductor field-effect transistor (MESFET), to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. As an illustration of feasibility, the authors demonstrate optical signal amplification with a single MESFET.

  4. Smoking experience modulates the cortical integration of vision and haptics.

    Science.gov (United States)

    Yalachkov, Yavor; Kaiser, Jochen; Görres, Andreas; Seehaus, Arne; Naumer, Marcus J

    2012-01-01

    Human neuroplasticity of multisensory integration has been studied mainly in the context of natural or artificial training situations in healthy subjects. However, regular smokers also offer the opportunity to assess the impact of intensive daily multisensory interactions with smoking-related objects on the neural correlates of crossmodal object processing. The present functional magnetic resonance imaging study revealed that smokers show a comparable visuo-haptic integration pattern for both smoking paraphernalia and control objects in the left lateral occipital complex, a region playing a crucial role in crossmodal object recognition. Moreover, the degree of nicotine dependence correlated positively with the magnitude of visuo-haptic integration in the left lateral occipital complex (LOC) for smoking-associated but not for control objects. In contrast, in the left LOC non-smokers displayed a visuo-haptic integration pattern for control objects, but not for smoking paraphernalia. This suggests that prolonged smoking-related multisensory experiences in smokers facilitate the merging of visual and haptic inputs in the lateral occipital complex for the respective stimuli. Studying clinical populations who engage in compulsive activities may represent an ecologically valid approach to investigating the neuroplasticity of multisensory integration.

  5. Monolithic microchannel heatsink

    Science.gov (United States)

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  6. Context modulates the ERP signature of contour integration.

    Directory of Open Access Journals (Sweden)

    Bart Machilsen

    Full Text Available We investigated how the electrophysiological signature of contour integration is changed by the context in which a contour is embedded. Specifically, we manipulated the orientations of Gabor elements surrounding an embedded shape outline. The amplitudes of early visual components over posterior scalp regions were changed by the presence of a contour, and by the orientation of elements surrounding the contour. Differences in context type had an effect on the early P1 and N1 components, but not on the later P2 component. The presence of a contour had an effect on the N1 and P2 components, but not on the earlier P1 component. A modulatory effect of context on contour integration was observed on the N1 component. These results highlight the importance of the context in which contour integration takes place.

  7. Integrated Acoustooptic Device Modules for Optical Information Processing

    Science.gov (United States)

    1989-02-28

    Japanese Journal of Applied Physics , 1987, (Invited paper). 15. D. Young, W. Chen, C.S. Tsai, "Tunable Wideband Guided Wave Magneto-optic Modulator Using Magnetostatic Surface Waves," presented at &IE..Meijng, Jan. 1987, Los Angeles, California, Proc. SPIE, Vol. 2M (Invited Paper). 16. C.S. Tsai, D. Young, W. Chen, H. Glass, and L. Adkins, "Wideband Interactions Between Optical Waves and Magnetostatic Surface Waves in a YIG-GGG Waveguide," Proc. of 1987 International Magnetics CoQference, p. GC-07, April 14- 18,

  8. Hermeneutics framework: integration of design rationale and optimizing software modules

    NARCIS (Netherlands)

    Aksit, Mehmet; Malakuti Khah Olun Abadi, Somayeh

    2015-01-01

    To tackle the evolution challenges of adaptive systems, this paper argues on the necessity of hermeneutic approaches that help to avoid too early elimination of design alternatives. This visionary paper proposes the Hermeneutics Framework, which computationally integrates a design rationale manageme

  9. Hermeneutics framework: integration of design rationale and optimizing software modules

    NARCIS (Netherlands)

    Aksit, Mehmet; Malakuti, Somayeh

    2015-01-01

    To tackle the evolution challenges of adaptive systems, this paper argues on the necessity of hermeneutic approaches that help to avoid too early elimination of design alternatives. This visionary paper proposes the Hermeneutics Framework, which computationally integrates a design rationale manageme

  10. SEMICONDUCTOR INTEGRATED CIRCUITS: Sigma-delta modulator modeling analysis and design

    Science.gov (United States)

    Binjie, Ge; Xin'an, Wang; Xing, Zhang; Xiaoxing, Feng; Qingqin, Wang

    2010-09-01

    This paper introduces a new method for SC sigma-delta modulator modeling. It studies the integrator's different equivalent circuits in the integrating and sampling phases. This model uses the OP-AMP input pair's tail current (I0) and overdrive voltage (von) as variables. The modulator's static and dynamic errors are analyzed. A group of optimized I0 and von for maximum SNR and power × area ratio can be obtained through this model. As examples, a MASH21 modulator for digital audio and a second order modulator for RFID baseband are implemented and tested, and they can achieve 91 dB and 72 dB respectively, which verifies the modeling and design criteria.

  11. Integration of perception and reasoning in fast neural modules

    Science.gov (United States)

    Fritz, David G.

    1989-01-01

    Artificial neural systems promise to integrate symbolic and sub-symbolic processing to achieve real time control of physical systems. Two potential alternatives exist. In one, neural nets can be used to front-end expert systems. The expert systems, in turn, are developed with varying degrees of parallelism, including their implementation in neural nets. In the other, rule-based reasoning and sensor data can be integrated within a single hybrid neural system. The hybrid system reacts as a unit to provide decisions (problem solutions) based on the simultaneous evaluation of data and rules. Discussed here is a model hybrid system based on the fuzzy cognitive map (FCM). The operation of the model is illustrated with the control of a hypothetical satellite that intelligently alters its attitude in space in response to an intersecting micrometeorite shower.

  12. Fabrication of an InP/GaInAsP based integrated gain-coupled DFB laser/M-Z phase modulator for 10Gb/sec fiber optic transmission

    Energy Technology Data Exchange (ETDEWEB)

    Puetz, N.; Adams, D.M.; Rolland, C.; Moore, R.; Mallard, R. [Bell-Northern Research, Ottawa, Ontario (Canada)

    1996-12-31

    The monolithic integration of lasers and modulators is an attractive approach for the manufacture of compact, low-chirp light sources with low packaging costs for high bit rate (10Gb/s) long haul fiber optic transmission systems. In this presentation the authors describe the fabrication of an InGaAsP/InP-based Mach/Zehnder phase modulator with a gain-coupled DFB laser which achieves 10Gb/s transmission at 1.55 {micro}m over 100km of non-dispersion shifted fiber. The use of an interferometric modulator provides greater freedom for the control of chirp when compared to modulation by electroabsorption. A strained layer multi quantum well gain-coupled DFB laser was employed for the cw-source because of its potential for very high yield of devices which laser in a single mode and for its greater immunity to external reflection. The integration of a phase modulator with a laser requires the deposition of InGaAsP-based quantum wells with different thicknesses over different, but adjacent areas of the InP substrate. Previous efforts of this kind employed Selective Area Epitaxy. Although SAE is an elegant method of locally varying thicknesses of epitaxial films it does not allow the independent growth of different numbers of quantum wells. Therefore, it reduces the designer`s flexibility in choosing the optimum parameters for wells and barriers as well as confinement layers (thickness, number, composition, doping) independently for both the laser and the modulator. For exactly that reason the authors have decided to pursue the butt-coupled approach and deposit the layer sequences for laser and modulator in 2 separate growth runs.

  13. Effect of Integrated Yoga Module on Selected Psychological Variables among Women with Anxiety Problem.

    Science.gov (United States)

    Parthasarathy, S; Jaiganesh, K; Duraisamy

    2014-01-01

    The implementation of yogic practices has proven benefits in both organic and psychological diseases. Forty-five women with anxiety selected by a random sampling method were divided into three groups. Experimental group I was subjected to asanas, relaxation and pranayama while Experimental group II was subjected to an integrated yoga module. The control group did not receive any intervention. Anxiety was measured by Taylor's Manifest Anxiety Scale before and after treatment. Frustration was measured through Reaction to Frustration Scale. All data were spread in an Excel sheet to be analysed with SPSS 16 software using analysis of covariance (ANCOVA). Selected yoga and asanas decreased anxiety and frustration scores but treatment with an integrated yoga module resulted in significant reduction of anxiety and frustration. To conclude, the practice of asanas and yoga decreased anxiety in women, and yoga as an integrated module significantly improved anxiety scores in young women with proven anxiety without any ill effects.

  14. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    Science.gov (United States)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  15. Modelling the heat dynamics of building integrated and ventilated photovoltaic modules

    DEFF Research Database (Denmark)

    Friling, N.; Jimenez, M.J.; Bloem, H.

    2009-01-01

    -up. To identify best set-up, grey-box models consisting of stochastic differential equations are applied. The models are first order stochastic state space models. Maximum likelihood estimation and the extended Kalman filter are applied in the parameter estimation phase. To validate the estimated models, plots......This paper deals with mathematical modelling of the heat transfer of building integrated photovoltaic (BIPV) modules. The efficiency of the photovoltaic (PV) module and its temperature are negatively correlated. It is therefore of interest to lower the temperature of the PV module by increasing...... the heat transfer from the PV module. The experiment and data originate from a test reference module the EC-JRC Ispra. The set-up provides the opportunity of changing physical parameters, the ventilation speed and the type of air flow, and this makes it possible to determine the preferable set...

  16. 10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array

    Science.gov (United States)

    Ryu, Sang-Wan; Sim, Jae-Sik; Kwan, Yong-Hwan; Kim, Sung-Bock; Baek, Yong-Soon

    2008-05-01

    10 Gbps data transmission was demonstrated with electroabsorption modulators integrated with a 4-channel wavelength division multiplexing transmitter composed of distributed Bragg reflector (DBR) lasers. A selective area growth technique was employed for the control of bandgap energy in the gain, modulator and passive sections. Then the laser and modulator stripes were fabricated by a buried heterostructure process. The DBR lasers showed uniform threshold currents between 5 and 10 mA, while the slope efficiency was around 0.11 W A-1. By controlling the DBR currents, a 4-channel transmitter was achieved for the channel spacing of 100 GHz (0.8 nm). The electroabsorption modulator showed clear eye openings under 10 Gbps non-return-to-zero modulation. It allowed 10 Gbps error-free operation over a 25 km long single-mode fiber.

  17. Planar Integrated Magnetics (PIM) Module in Hybrid Bidirectional DC-DC Converter for Fuel Cell Application

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Zhang, Zhe; Thomsen, Ole Cornelius

    2011-01-01

    , hereby increasing the power density of converters. In this paper, a new planar integrated magnetics (PIM) module for a phase-shift plus duty cycle controlled hybrid bi-directional dc-dc converter is proposed, which assembles one boost inductor and two transformers into an E-I-E core geometry, reducing...... and theoretical analysis, a lab prototype employing the PIM module is implemented for a fuel cell application with 20~40 V input voltage and 400 V output voltage. Detailed results from the experimental comparisons demonstrate that the PIM module is fully functional and electromagnetically equivalent...

  18. Alignment and integration of thin, lightweight x-ray optics into modules

    Science.gov (United States)

    Biskach, Michael P.; Chan, Kai-Wing; Mazzarella, James R.; McClelland, Ryan S.; Saha, Timo T.; Schofield, Mark J.; Zhang, William W.

    2014-07-01

    Future X-ray telescopes with high angular resolution and high throughput optics will help enable new high energy observations. X-ray optics in development at NASA Goddard Space Flight Center by the Next Generation X-ray Optics (NGXO) group utilizes a Flight Mirror Assembly (FMA) comprised of dozens of mirror modules populated with mirror segments aligned to a common focus. Mirror segments are currently aligned and permanently fixed into a module one at a time with emphasis on preventing degradation of the overall module performance. To meet cost and schedule requirements, parallelization and automation of the module integration process must be implemented. Identification of critical mirror segment alignment factors in addition to the progress towards a robust and automated module integration process is presented. There is a fundamental need for a reliable mirror segment alignment and bonding process that will be performed on hundreds or thousands of mirror segments. Results from module X-ray performance verification tests are presented to confirm module performance meets requirements.

  19. Monolitni katalizatori i reaktori: osnovne značajke, priprava i primjena (Monolith catalysts and reactors: preparation and applications

    Directory of Open Access Journals (Sweden)

    Tomašić, V.

    2004-12-01

    Full Text Available Monolithic (honeycomb catalysts are continuous unitary structures containing many narrow, parallel and usually straight channels (or passages. Catalytically active components are dispersed uniformly over the whole porous ceramic monolith structure (so-called incorporated monolithic catalysts or are in a layer of porous material that is deposited on the walls of channels in the monolith's structure (washcoated monolithic catalysts. The material of the main monolithic construction is not limited to ceramics but includes metals, as well. Monolithic catalysts are commonly used in gas phase catalytic processes, such as treatment of automotive exhaust gases, selective catalytic reduction of nitrogen oxides, catalytic removal of volatile organic compounds from industrial processes, etc. Monoliths continue to be the preferred support for environmental applications due to their high geometric surface area, different design options, low pressure drop, high temperature durability, mechanical strength, ease of orientation in a reactor and effectiveness as a support for a catalytic washcoat. As known, monolithic catalysts belong to the class of the structured catalysts and/or reactors (in some cases the distinction between "catalyst" and "reactor" has vanished. Structured catalysts can greatly intensify chemical processes, resulting in smaller, safer, cleaner and more energy efficient technologies. Monolith reactors can be considered as multifunctional reactors, in which chemical conversion is advantageously integrated with another unit operation, such as separation, heat exchange, a secondary reaction, etc. Finally, structured catalysts and/or reactors appear to be one of the most significant and promising developments in the field of heterogeneous catalysis and chemical engineering of the recent years. This paper gives a description of the background and perspectives for application and development of monolithic materials. Different methods and techniques

  20. Modulation of chromatin structure by the FACT histone chaperone complex regulates HIV-1 integration.

    Science.gov (United States)

    Matysiak, Julien; Lesbats, Paul; Mauro, Eric; Lapaillerie, Delphine; Dupuy, Jean-William; Lopez, Angelica P; Benleulmi, Mohamed Salah; Calmels, Christina; Andreola, Marie-Line; Ruff, Marc; Llano, Manuel; Delelis, Olivier; Lavigne, Marc; Parissi, Vincent

    2017-07-28

    Insertion of retroviral genome DNA occurs in the chromatin of the host cell. This step is modulated by chromatin structure as nucleosomes compaction was shown to prevent HIV-1 integration and chromatin remodeling has been reported to affect integration efficiency. LEDGF/p75-mediated targeting of the integration complex toward RNA polymerase II (polII) transcribed regions ensures optimal access to dynamic regions that are suitable for integration. Consequently, we have investigated the involvement of polII-associated factors in the regulation of HIV-1 integration. Using a pull down approach coupled with mass spectrometry, we have selected the FACT (FAcilitates Chromatin Transcription) complex as a new potential cofactor of HIV-1 integration. FACT is a histone chaperone complex associated with the polII transcription machinery and recently shown to bind LEDGF/p75. We report here that a tripartite complex can be formed between HIV-1 integrase, LEDGF/p75 and FACT in vitro and in cells. Biochemical analyzes show that FACT-dependent nucleosome disassembly promotes HIV-1 integration into chromatinized templates, and generates highly favored nucleosomal structures in vitro. This effect was found to be amplified by LEDGF/p75. Promotion of this FACT-mediated chromatin remodeling in cells both increases chromatin accessibility and stimulates HIV-1 infectivity and integration. Altogether, our data indicate that FACT regulates HIV-1 integration by inducing local nucleosomes dissociation that modulates the functional association between the incoming intasome and the targeted nucleosome.

  1. Monolithic fuel cell based power source for burst power generation

    Science.gov (United States)

    Fee, D. C.; Blackburn, P. E.; Busch, D. E.; Dees, D. W.; Dusek, J.; Easler, T. E.; Ellingson, W. A.; Flandermeyer, B. K.; Fousek, R. J.; Heiberger, J. J.

    A unique fuel cell coupled with a low power nuclear reactor presents an attractive approach for SDI burst power requirements. The monolithic fuel cell looks attractive for space applications and represents a quantum jump in fuel cell technology. Such a breakthrough in design is the enabling technology for lightweight, low volume power sources for space based pulse power systems. The monolith is unique among fuel cells in being an all solid state device. The capability for miniaturization, inherent in solid state devices, gives the low volume required for space missions. In addition, the solid oxide fuel cell technology employed in the monolith has high temperature reject heat and can be operated in either closed or open cycles. Both these features are attractive for integration into a burst power system.

  2. Lrp4 modulates extracellular integration of cell signaling pathways in development.

    Directory of Open Access Journals (Sweden)

    Atsushi Ohazama

    Full Text Available The extent to which cell signaling is integrated outside the cell is not currently appreciated. We show that a member of the low-density receptor-related protein family, Lrp4 modulates and integrates Bmp and canonical Wnt signalling during tooth morphogenesis by binding the secreted Bmp antagonist protein Wise. Mouse mutants of Lrp4 and Wise exhibit identical tooth phenotypes that include supernumerary incisors and molars, and fused molars. We propose that the Lrp4/Wise interaction acts as an extracellular integrator of epithelial-mesenchymal cell signaling. Wise, secreted from mesenchyme cells binds to BMP's and also to Lrp4 that is expressed on epithelial cells. This binding then results in the modulation of Wnt activity in the epithelial cells. Thus in this context Wise acts as an extracellular signaling molecule linking two signaling pathways. We further show that a downstream mediator of this integration is the Shh signaling pathway.

  3. Emotional Intensity Modulates the Integration of Bimodal Angry Expressions: ERP Evidence

    Directory of Open Access Journals (Sweden)

    Zhihui Pan

    2017-06-01

    Full Text Available Integration of information from face and voice plays a central role in social interactions. The present study investigated the modulation of emotional intensity on the integration of facial-vocal emotional cues by recording EEG for participants while they were performing emotion identification task on facial, vocal, and bimodal angry expressions varying in emotional intensity. Behavioral results showed the rates of anger and reaction speed increased as emotional intensity across modalities. Critically, the P2 amplitudes were larger for bimodal expressions than for the sum of facial and vocal expressions for low emotional intensity stimuli, but not for middle and high emotional intensity stimuli. These findings suggested that emotional intensity modulates the integration of facial-vocal angry expressions, following the principle of Inverse Effectiveness (IE in multimodal sensory integration.

  4. 40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

    Science.gov (United States)

    Cai, Peng-Fei; Sun, Chang-Zheng; Xiong, Bing; Wang, Jian; Zhang, Ming-Jun; Xu, Jian-Ming; Liu, Zhi-Zhi; Huang, Jin; Luo, Yi

    2007-07-01

    A 40 Gb/s transmitter module containing an AlGaInAs electroabsorption (EA) modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser has been fabricated using identical epitaxial layer (IEL) approach. Low loss coaxial-to-coplanar waveguide (CPW) transition is designed and fabricated for the module. By improving the quality of the anti-reflection (AR) coating on the EA modulator facet and optimizing the structure of the CPW transmission line, resonances in the frequency response of the module have been effectively suppressed. The module exhibits a small signal modulation bandwidth over 35 GHz, and clear eye opening has been demonstrated under 40 Gb/s nonreturn-to-zero (NRZ) code modulation.

  5. Modulating Wnt Signaling Pathway to Enhance Allograft Integration in Orthopedic Trauma Treatment

    Science.gov (United States)

    2014-04-01

    TITLE: Modulating Wnt Signaling Pathway to Enhance Allograft Integration in Orthopedic Trauma Treatment PRINCIPAL INVESTIGATOR: Amarjit S...Integration in Orthopedic Trauma Treatment 5b. GRANT NUMBER W81XWH-10-1-1054 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Amarjit S. Virdi, PhD...practical means of enhancing repair of large bone defects in orthopedic trauma and can be translated into clinical practice in the near future. Figures

  6. Recent developments in electroabsorption modulators at Acreo Swedish ICT

    Science.gov (United States)

    Wang, Qin; Zhang, Andy Z.; Almqvist, Susanne; Junique, Stephane; Noharet, Bertrand; Platt, Duncan; Salter, Michael; Andersson, Jan Y.

    2015-03-01

    Three types of electroabsorption modulators (EAMs) based on III-V semiconductor multiple quantum wells (MQW) are presented in this work. One is a novel monolithic integration traveling-wave EAM for an analog optical transmitter/transceiver to achieve integrated photonic mm-wave functions for broadband connectivity. Another one is composed of an integrated EAM 1D array in a photonic beam-former as a Ku-band phased array antenna for seamless aeronautical networking through integration of data links, radios, and antennas. The third one addresses the use of MQW EAMs in free space optical links through biological tissue for transcutaneous communication.

  7. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  8. Semantic integration to identify overlapping functional modules in protein interaction networks

    Directory of Open Access Journals (Sweden)

    Ramanathan Murali

    2007-07-01

    Full Text Available Abstract Background The systematic analysis of protein-protein interactions can enable a better understanding of cellular organization, processes and functions. Functional modules can be identified from the protein interaction networks derived from experimental data sets. However, these analyses are challenging because of the presence of unreliable interactions and the complex connectivity of the network. The integration of protein-protein interactions with the data from other sources can be leveraged for improving the effectiveness of functional module detection algorithms. Results We have developed novel metrics, called semantic similarity and semantic interactivity, which use Gene Ontology (GO annotations to measure the reliability of protein-protein interactions. The protein interaction networks can be converted into a weighted graph representation by assigning the reliability values to each interaction as a weight. We presented a flow-based modularization algorithm to efficiently identify overlapping modules in the weighted interaction networks. The experimental results show that the semantic similarity and semantic interactivity of interacting pairs were positively correlated with functional co-occurrence. The effectiveness of the algorithm for identifying modules was evaluated using functional categories from the MIPS database. We demonstrated that our algorithm had higher accuracy compared to other competing approaches. Conclusion The integration of protein interaction networks with GO annotation data and the capability of detecting overlapping modules substantially improve the accuracy of module identification.

  9. Technical principles and neurosurgical applications of fluorescein fluorescence using a microscope-integrated fluorescence module.

    Science.gov (United States)

    Rey-Dios, Roberto; Cohen-Gadol, Aaron A

    2013-04-01

    Fluorescent technology has recently become a valuable tool in the surgical management of neoplastic and vascular lesions. The availability of microscope-integrated fluorescent modules has facilitated incorporation of this technology within the microsurgical workflow. The currently available microscope integrated modules use 5-aminolevulinic acid (5-ALA) and indocyanine green (ICG) as fluorophores. Fluorescein sodium is a fluorescent molecule that has been used specifically in ophthalmology for the treatment of retinal angiography. A new microscope-integrated fluorescent module has been recently developed for fluorescein. We employed this technology to maximize resection of tumors and perform intraoperative angiography to guide microsurgical management of aneurysms and arteriovenous malformations. Fluorescein fluorescence allows the surgeon to appreciate fluorescent structures through the oculars while visualizing non-fluorescent tissues in near natural colors. Therefore, the operator can proceed with microsurgery under the fluorescent mode. We present three representative cases in which the use of fluorescein fluorescence was found useful in the surgeon's decision making during surgery. The applications of this new microscope-integrated fluorescent module are multiple, and include vascular and oncologic neurosurgery. Further clinical investigations with large patient cohorts are needed to fully establish the role of this new technology.

  10. Identifying functional modules in protein-protein interaction networks: An integrated exact approach

    NARCIS (Netherlands)

    Dittrich, M.; Klau, G.W.; Rosenwald, A.; Dandekar, T.; et al, not CWI

    2008-01-01

    Motivation: With the exponential growth of expression and protein-protein interaction (PPI) data, the frontier of research in system biology shifts more and more to the integrated analysis of these large datasets. Of particular interest is the identification of functional modules in PPI networks, sh

  11. Design and Construction Transceiver Module Using Polymer PLC Hybrid Integration Technology

    OpenAIRE

    Jerabek, Vitezslav; Huttel, Ivan; Prajzler, Vaclav; Busek, Karel

    2010-01-01

    In this paper were presented first steps, which guide to the design and construction of a VHGT attached WDM triplex transceiver module TRx using polymer PLC hybrid integration technology. We report on the results measuring of the optical attenuation of the

  12. Limited benefit of inversely optimised intensity modulation in breast conserving radiotherapy with simultaneously integrated boost

    NARCIS (Netherlands)

    van der Laan, Hans Paul; Dolsma, Willemtje; Schilstra, C; Korevaar, Erik W; de Bock, Geertruida H; Maduro, John H; Langendijk, Johannes A

    2010-01-01

    BACKGROUND AND PURPOSE: To examine whether in breast-conserving radiotherapy (RT) with simultaneously integrated boost (SIB), application of inversely planned intensity-modulated radiotherapy (IMRT-SIB) instead of three-dimensional RT (3D-CRT-SIB) has benefits that justify the additional costs, and

  13. Module integration and amplifier design optimization for optically enabled passive millimeter-wave imaging

    Science.gov (United States)

    Wright, Andrew A.; Martin, Richard D.; Schuetz, Christopher A.; Shi, Shouyuan; Zhang, Yifei; Yao, Peng; Shreve, Kevin P.; Dillon, Thomas E.; Mackrides, Daniel G.; Harrity, Charles E.; Prather, Dennis W.

    2016-05-01

    This paper will discuss the development of a millimeter-wave (mm-wave) receiver module used in a sparse array passive imaging system. Using liquid crystal polymer (LCP) technology and low power InP low noise amplifiers (LNA), enables the integration of the digital circuitry along with the RF components onto a single substrate significantly improves the size, weight, power, and cost (SWaP-C) of the mm-wave receiver module compared to previous iterations of the module. Also comparing with previous generation modules, the operating frequency has been pushed from 77 GHz to 95 GHz in order to improve the resolution of the captured image from the sparse array imaging system.

  14. Effect of light backscattering on high-speed modulation performance in strongly injection-locked unidirectional semiconductor ring lasers

    Science.gov (United States)

    Smolyakov, Gennady A.; Osinski, Marek

    2014-03-01

    Greatly enhanced high-speed modulation performance has been recently predicted in numerical calculations for a novel injection-locking scheme involving a DBR or DFB master laser monolithically integrated with a unidirectional semiconductor microring laser. In this work, we investigate the effect of light backscattering between the two counterpropagating modes on high-speed modulation performance of strongly injection-locked unidirectional semiconductor microring lasers.

  15. Interdisciplinary Integration of the CVS Module and Its Effect on Faculty and Student Satisfaction as Well as Student Performance

    Directory of Open Access Journals (Sweden)

    Ayuob Nasra N

    2012-07-01

    Full Text Available Abstract Background Beyond the adoption of the principles of horizontal and vertical integration, significant planning and implementation of curriculum reform is needed. This study aimed to assess the effect of the interdisciplinary integrated Cardiovascular System (CVS module on both student satisfaction and performance and comparing them to those of the temporally coordinated CVS module that was implemented in the previous year at the faculty of Medicine of the King Abdulaziz University, Saudi Arabia. Methods This interventional study used mixed method research design to assess student and faculty satisfaction with the level of integration within the CVS module. A team from the medical education department was assembled in 2010/2011 to design a plan to improve the CVS module integration level. After delivering the developed module, both student and faculty satisfaction as well as students performance were assessed and compared to those of the previous year to provide an idea about module effectiveness. Results Many challenges faced the medical education team during design and implementation of the developed CVS module e.g. resistance of faculty members to change, increasing the percentage of students directed learning hours from the total contact hour allotted to the module and shifting to integrated item writing in students assessment, spite of that the module achieved a significant increase in both teaching faculty and student satisfaction as well as in the module scores. Conclusion The fully integrated CVS has yielded encouraging results that individual teachers or other medical schools who attempt to reformulate their curriculum may find valuable.

  16. Evaluation of Maxim Module-Integrated Electronics at the DOE Regional Test Centers (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C.; Sekulic, B.; Barkaszi, S.; Yang, J.; Kahn, S.

    2014-06-01

    Module-embedded power electronics developed by Maxim Integrated are under evaluation through a partnership with the Department of Energy's Regional Test Center (RTC) program. Field deployments of both conventional modules and electronics-enhanced modules are designed to quantify the performance advantage of Maxim's products under different amounts of interrow shading, and their ability to be deployed at a greater ground-coverage ratio than conventional modules. Simulations in PVSYST have quantified the predicted performance difference between conventional modules and Maxim's modules from interrow shading. Initial performance results have identified diffuse irradiance losses at tighter row spacing for both the Maxim and conventional modules. Comparisons with published models show good agreement with models predicting the greatest diffuse irradiance losses. At tighter row spacing, all of the strings equipped with embedded power electronics outperformed their conventional peers. An even greater performance advantage is predicted to occur in the winter months when the amount of interrow shading mismatch is at a maximum.

  17. Evaluation of Maxim Module-Integrated Electronics at the DOE Regional Test Centers: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C.; Sekulic, B.; Stein, J.; Barkaszi, S.; Yang, J.; Kahn, S.

    2014-07-01

    Module-embedded power electronics developed by Maxim Integrated are under evaluation through a partnership with the Department of Energy's Regional Test Center (RTC) program. Field deployments of both conventional modules and electronics-enhanced modules are designed to quantify the performance advantage of Maxim's products under different amounts of inter-row shading, and their ability to be deployed at a greater ground-coverage-ratio than conventional modules. Simulations in PVSYST have quantified the predicted performance difference between conventional modules and Maxim's modules from inter-row shading. Initial performance results have identified diffuse irradiance losses at tighter row spacing for both the Maxim and conventional modules. Comparisons with published models show good agreement with models predicting the greatest diffuse irradiance losses. At tighter row spacing, all of the strings equipped with embedded power electronics outperformed their conventional peers. An even greater performance advantage is predicted to occur in the winter months when the amount of inter-row shading mismatch is at a maximum.

  18. A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

    Energy Technology Data Exchange (ETDEWEB)

    Misiakos, K [Microelectronics Institute, NCSR ' Demokritos' , 15310, Athens (Greece); Petrou, P S [Immunoassay Lab., I/R-RP, NCSR ' Demokritos' , 15310, Athens (Greece); Kakabakos, S E [Immunoassay Lab., I/R-RP, NCSR ' Demokritos' , 15310, Athens (Greece); Ruf, H H [Fraunhofer Institute of Biomedical Engineering (IBMT) and University of Saarland, 66386, St Ingbert (Germany); Ehrentreich-Foerster, E [Department of Molecular Bioanalytics and Bioelectronics, Fraunhofer Institute for Biomedical Engineering, D-14558 Nuthetal (Germany); Bier, F F [Department of Molecular Bioanalytics and Bioelectronics, Fraunhofer Institute for Biomedical Engineering, D-14558 Nuthetal (Germany)

    2005-01-01

    A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

  19. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    Directory of Open Access Journals (Sweden)

    Haiyun Huang

    2015-10-01

    Full Text Available This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  20. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-01-01

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. PMID:26516864

  1. Phased array of high-power, coherent, monolithic flared amplifier master oscillator power amplifiers

    Science.gov (United States)

    Osinski, J. S.; Mehuys, D.; Welch, D. F.; Waarts, R. G.; Major, J. S., Jr.; Dzurko, K. M.; Lang, R. J.

    1995-01-01

    A monolithically integrated array of InGaAs/AlGaAs flared amplifiers driven by a single DBR laser through a power splitter network and individually addressed phase modulators is described. Phase adjustment of ≳2π per element by free-carrier effects is verified by monitoring the interference pattern of all four emitters, and typically requires <15 mA of current to obtain a 2π phase shift. Phase matching is achieved among all four diffraction-limited emitters at a pulsed output power of ≳5 W, and, combined with the proper external lensing, could therefore result in an ultranarrow, single-lobed far-field pattern whose width is determined by the extended aperture of the array.

  2. Monolithically Peltier-cooled laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hava, S.; Hunsperger, R.G.; Sequeira, H.B.

    1984-04-01

    A new method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and heat spreading device to the laser, is presented. This cooling both reduces and stabilizes the laser junction temperature to minimize such deleterious effects as wavelength drift due to heating. A unified description of the electrical and thermal properties of a monolithic semiconductor mesa structure is given. Here it is shown that an improvement in thermal characteristics is obtained by depositing a relatively thick metallic layer, and by using this layer as a part of an active Peltier structure. Experimental results reveal a 14-percent increase in emitted power (external quantum efficiency) due to passive heat spreading and a further 8-percent if its Peltier cooler is operated. Fabrication techniques used to obtain devices exhibiting the above performance characteristics are given. 21 references.

  3. Growing functional modules from a seed protein via integration of protein interaction and gene expression data

    Directory of Open Access Journals (Sweden)

    Dimitrakopoulou Konstantina

    2007-10-01

    Full Text Available Abstract Background Nowadays modern biology aims at unravelling the strands of complex biological structures such as the protein-protein interaction (PPI networks. A key concept in the organization of PPI networks is the existence of dense subnetworks (functional modules in them. In recent approaches clustering algorithms were applied at these networks and the resulting subnetworks were evaluated by estimating the coverage of well-established protein complexes they contained. However, most of these algorithms elaborate on an unweighted graph structure which in turn fails to elevate those interactions that would contribute to the construction of biologically more valid and coherent functional modules. Results In the current study, we present a method that corroborates the integration of protein interaction and microarray data via the discovery of biologically valid functional modules. Initially the gene expression information is overlaid as weights onto the PPI network and the enriched PPI graph allows us to exploit its topological aspects, while simultaneously highlights enhanced functional association in specific pairs of proteins. Then we present an algorithm that unveils the functional modules of the weighted graph by expanding a kernel protein set, which originates from a given 'seed' protein used as starting-point. Conclusion The integrated data and the concept of our approach provide reliable functional modules. We give proofs based on yeast data that our method manages to give accurate results in terms both of structural coherency, as well as functional consistency.

  4. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  5. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  6. Research and development of peripheral technology for photovoltaic power systems. Research and development of photovoltaic modules integrated with construction materials (detachable plane panel); Shuhen gijutsu no kenkyu kaihatsu. Kenzai ittaigata module no kenkyu kaihatsu (chakudatsushiki heiban panel)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on R and D of photovoltaic modules integrated with construction materials in fiscal 1994. (1) On development of technology for module structures, specifications of the horizontal muntin system module were newly determined in addition to the improved muntin system module, and the prototype pseudo-module integrated with construction material was prepared. The comparison results of the basic performance of both system modules clarified superior waterproofing and module temperature uniformity of the horizontal muntin system. Based on this specifications, integration technology of modules with back metal plates was studied. Formation of the integrated module close to final specifications was ascertained to be possible by use of passivation equipment to irregular form. (2) On development of construction and installation methods of modules, improvement of the waterproofing and workability of both system modules was studied. (3) On the study on practical use of modules, their design and ventilation/cooling structure were studied. 38 figs., 13 tabs.

  7. Electromagnetic Field Behavior in Dispersive Isotropic Negative Phase Velocity/Negative Refractive Index Guided Wave Structures Compatible with Millimeter-Wave Monolithic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Clifford M. Krowne

    2007-01-01

    Full Text Available A microstrip configuration has been loaded with a dispersive isotropic left-handed medium (LHM substrate and studied regarding its high frequency millimeter-wave behavior near 100 GHz. This has been accomplished using a full-wave integral-equation anisotropic Green's function code configured to run for isotropy. Never before seen electromagnetic field distributions are produced, unlike anything found in normal media devices, using this ab initio solver. These distributions are made in the cross-sectional dimension, with the field propagating in the perpendicular direction. It is discovered that the LHM distributions are so radically different from ordinary media used as a substrate that completely new electronic devices based upon the new physics become a real possibility. The distinctive dispersion diagram for the dispersive medium, consisting of unit cells with split ring resonator-rod combinations, is provided over the upper millimeter-wave frequency regime.

  8. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  9. Second-harmonic generation in single-mode integrated waveguides through mode-shape modulation

    CERN Document Server

    Chiles, Jeff; Rao, Ashutosh; Malinowski, Marcin; Camacho-González, Guillermo Fernando; Fathpour, Sasan

    2016-01-01

    A simple and flexible technique for achieving quasi-phase-matching in integrated photonic waveguides without periodic poling is proposed and experimentally demonstrated, referred to as mode-shape-modulation (MSM). It employs a periodic variation of waveguide width to modulate the intensity of the pump wave, effectively suppressing out-of-phase light generation. This technique is applied to the case of second-harmonic generation in thin-film lithium niobate ridge waveguides. MSM waveguides are fabricated and characterized with pulsed-pumping in the near-infrared, showing harmonic generation at a signal wavelength of 784 nm.

  10. An Integrated Simulation Module for Cyber-Physical Automation Systems †

    Science.gov (United States)

    Ferracuti, Francesco; Freddi, Alessandro; Monteriù, Andrea; Prist, Mariorosario

    2016-01-01

    The integration of Wireless Sensors Networks (WSNs) into Cyber Physical Systems (CPSs) is an important research problem to solve in order to increase the performances, safety, reliability and usability of wireless automation systems. Due to the complexity of real CPSs, emulators and simulators are often used to replace the real control devices and physical connections during the development stage. The most widespread simulators are free, open source, expandable, flexible and fully integrated into mathematical modeling tools; however, the connection at a physical level and the direct interaction with the real process via the WSN are only marginally tackled; moreover, the simulated wireless sensor motes are not able to generate the analogue output typically required for control purposes. A new simulation module for the control of a wireless cyber-physical system is proposed in this paper. The module integrates the COntiki OS JAva Simulator (COOJA), a cross-level wireless sensor network simulator, and the LabVIEW system design software from National Instruments. The proposed software module has been called “GILOO” (Graphical Integration of Labview and cOOja). It allows one to develop and to debug control strategies over the WSN both using virtual or real hardware modules, such as the National Instruments Real-Time Module platform, the CompactRio, the Supervisory Control And Data Acquisition (SCADA), etc. To test the proposed solution, we decided to integrate it with one of the most popular simulators, i.e., the Contiki OS, and wireless motes, i.e., the Sky mote. As a further contribution, the Contiki Sky DAC driver and a new “Advanced Sky GUI” have been proposed and tested in the COOJA Simulator in order to provide the possibility to develop control over the WSN. To test the performances of the proposed GILOO software module, several experimental tests have been made, and interesting preliminary results are reported. The GILOO module has been applied to a

  11. A glass frit-sealed dye solar cell module with integrated series connections

    Energy Technology Data Exchange (ETDEWEB)

    Sastrawan, R.; Belledin, U. [Freiburg Materials Research Centre, Stefan-Meier Street 21, 79104 Freiburg (Germany); Beier, J.; Vetter, C. [Institut fuer Angewandte Photovoltaik, Munscheidstrasse 14, D-45886 Gelsenkirchen (Germany); Hemming, S. [PSE GmbH, Solar Info Centre, D-79072 Freiburg (Germany); Hinsch, A.; Kern, R. [Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg (Germany); Petrat, F.M.; Prodi-Schwab, A. [Degussa AG, Creavis, Paul-Baumann-Strasse 1, D-45764 Marl (Germany); Lechner, P.; Hoffmann, W. [RWE SCHOTT Solar GmbH, Carl-Zeiss-Street 4, 63755 Alzenau (Germany)

    2006-07-06

    As the dye solar cell (DSC) technology progresses from laboratory-scale to large-area applications, long-term stability is one major obstacle. Especially for large-area DSC modules, stability is often a matter of hermetic sealing both between cells and for the whole module. Here we suggest glass frit as sealing material. Glass frit is thermally, mechanically and chemically very stable and can be applied via screen printing. DSC modules of 30x30cm{sup 2} with a glass frit as primary sealing material have been produced. It was shown that glass frit is applicable for the upscaling of the DSC technology to large areas. The thermal stability of the glass frit sealing and the integrated series connections was verified in a thermal cycling from -40 to 80{sup o}C. The colouration process has been scaled up to 30x30cm{sup 2} by pumping the dye solution through the module using only two filling holes. By heating the module to 70{sup o}C the filling of the module with electrolytes based on high viscous ionic liquids was demonstrated. (author)

  12. Catastrophic failure of a monolithic zirconia prosthesis.

    Science.gov (United States)

    Chang, Jae-Seung; Ji, Woon; Choi, Chang-Hoon; Kim, Sunjai

    2015-02-01

    Recently, monolithic zirconia restorations have received attention as an alternative to zirconia veneered with feldspathic porcelain to eliminate chipping failures of veneer ceramics. In this clinical report, a patient with mandibular edentulism received 4 dental implants in the interforaminal area, and a screw-retained monolithic zirconia prosthesis was fabricated. The patient also received a maxillary complete removable dental prosthesis over 4 anterior roots. At the 18-month follow-up, all of the zirconia cylinders were seen to be fractured, and the contacting abutment surfaces had lost structural integrity. The damaged abutments were replaced with new abutments, and a new prosthesis was delivered with a computer-assisted design and computer-assisted manufacturing fabricated titanium framework with denture teeth and denture base resins. At the 6-month recall, the patient did not have any problems. Dental zirconia has excellent physical properties; however, care should be taken to prevent excessive stresses on the zirconia cylinders when a screw-retained zirconia restoration is planned as a definitive prosthesis.

  13. Integrated Design and Engineering Analysis (IDEA) Environment - Propulsion Related Module Development and Vehicle Integration

    Science.gov (United States)

    Kamhawi, Hilmi N.

    2013-01-01

    This report documents the work performed during the period from May 2011 - October 2012 on the Integrated Design and Engineering Analysis (IDEA) environment. IDEA is a collaborative environment based on an object-oriented, multidisciplinary, distributed framework using the Adaptive Modeling Language (AML). This report will focus on describing the work done in the areas of: (1) Integrating propulsion data (turbines, rockets, and scramjets) in the system, and using the data to perform trajectory analysis; (2) Developing a parametric packaging strategy for a hypersonic air breathing vehicles allowing for tank resizing when multiple fuels and/or oxidizer are part of the configuration; and (3) Vehicle scaling and closure strategies.

  14. In situ Fabrication of Monolithic Copper Azide

    Science.gov (United States)

    Li, Bing; Li, Mingyu; Zeng, Qingxuan; Wu, Xingyu

    2016-04-01

    Fabrication and characterization of monolithic copper azide were performed. The monolithic nanoporous copper (NPC) with interconnected pores and nanoparticles was prepared by decomposition and sintering of the ultrafine copper oxalate. The preferable monolithic NPC can be obtained through decomposition and sintering at 400°C for 30 min. Then, the available monolithic NPC was in situ reacted with the gaseous HN3 for 24 h and the monolithic NPC was transformed into monolithic copper azide. Additionally, the copper particles prepared by electrodeposition were also reacted with the gaseous HN3 under uniform conditions as a comparison. The fabricated monolithic copper azide was characterized by Fourier transform infrared (FTIR), inductively coupled plasma-optical emission spectrometry (ICP-OES), and differential scanning calorimetry (DSC).

  15. Integration Of The Security Sub-Modules Elements In The Automotive Industry

    Science.gov (United States)

    Gallego, C.; Fernández, M.; Caires, A. S.; Cañibano, E.

    2007-05-01

    This study is addressed to obtain a design methodology for integrated security sub-modules (constituting the suspension and steering modules) in the car manufacturing industry. The sub-modules are made up of a steel structure and anchorage elements (rubber-metal or plastic-metal), which undergo separate surface treatments to prevent corrosion. Afterwards, the elements are traditionally joined by means of adhesives and screws. This process involves a great number of stages, low quality union methods and generation of corrosion areas that shorten its useful life. This methodology provides automotive suppliers an additional added value and cost reduction, allowing them to increase its competitiveness in a sector that faces the transition from the traditional supply chain to a strategic value chain.

  16. Study on Pulse Skip Modulation Mode in Smart Power Integrated Circuits and Its Test Technology

    Institute of Scientific and Technical Information of China (English)

    LUO Ping

    2005-01-01

    @@ Up to now, the popular control modes for smart power integrated circuit (SPIC) are PWM and PFM.PWM bases on constant frequency variable width (CFVW) control pulse, whereas, PFM bases on constant width variable frequency (CWVF) control pulse. PWM converter has low efficiency with light loads and high amplitude harmonic. On the other hand,the control circuit and filter for PFM are much complex. This dissertation proposes a novel modulation mode named pulse skip modulation (PSM)for SPIC converter, which bases on constant width constant frequency (CWCF) control pulse. It is shown that PSM converter would improve its efficiency and suppress EMI. It also has quick response speed, good interfere rejection and strong robust. Furthermore, it is easy to realize PSM control circuit. The modulating theories of PSM are firstly studied in the world according to the author's investigation.

  17. James Webb Space Telescope Optical Telescope Element Integrated Science Instrument Module (OTIS) Status

    Science.gov (United States)

    Feinberg, Lee; Voyton, Mark; Lander, Julie; Keski-Kuha, Ritva; Matthews, Gary

    2016-01-01

    The James Webb Space Telescope Optical Telescope Element (OTE) and Integrated ScienceInstrument Module (ISIM)are integrated together to form the OTIS. Once integrated, the OTIS undergoes primary mirrorcenter of curvatureoptical tests, electrical and operational tests, acoustics and vibration testing at the Goddard SpaceFlight Center beforebeing shipped to the Johnson Space Center for cryogenic optical testing of the OTIS. In preparationfor the cryogenicoptical testing, the JWST project has built a Pathfinder telescope and has completed two OpticalGround SystemEquipment (OGSE) cryogenic optical tests with the Pathfinder. In this paper, we will summarize opticaltest results todate and status the final Pathfinder test and the OTIS integration and environmental test preparations

  18. James Webb Space Telescope Optical Telescope Element/Integrated Science Instrument Module (OTIS) Status

    Science.gov (United States)

    Feinberg, Lee; Voyton, Mark; Lander, Juli; Keski-Kuha, Ritva; Matthews, Gary

    2016-01-01

    The James Webb Space Telescope Optical Telescope Element (OTE) and Integrated Science Instrument Module (ISIM) are integrated together to form the OTIS. Once integrated, the OTIS undergoes primary mirror center of curvature optical tests, electrical and operational tests, acoustics and vibration testing at the Goddard Space Flight Center before being shipped to the Johnson Space Center for cryogenic optical testing of the OTIS. In preparation for the cryogenic optical testing, the JWST project has built a Pathfinder telescope and has completed two Optical Ground System Equipment (OGSE) cryogenic optical tests with the Pathfinder. In this paper, we will summarize optical test results to date and status the final Pathfinder test and the OTIS integration and environmental test preparations

  19. A 16x1 wavelength division multiplexer with integrated distributed Bragg reflector lasers and electroabsorption modulators

    Science.gov (United States)

    Young, M. G.; Koren, U.; Miller, B. I.; Newkirk, M. A.; Chien, M.; Zirngibl, M.; Dragone, C.; Tell, B.; Presby, H. M.; Raybon, G.

    1993-08-01

    We demonstrate the integrated operation of a 16x1 wavelength-division multiplexed (WDM) source with distributed Bragg reflector (DBR) lasers and electroabsorption modulators. By using repeated holographic exposures and wet chemical etching, 16 different wavelengths from 1.544 to 1.553 micron with an average channel spacing of 6 angstroms are obtained. A high-performance combiner is used to obtain a very uniform coupling into the single-output waveguide, and with the integration of an optical amplifier an average optical power of -8 dBm per channel is coupled into a single-mode fiber.

  20. High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

    CERN Document Server

    Kim, M G; Park, S S; Oh, D K; Lee, H T; Kim, H M; Pyun, K E

    1998-01-01

    We have demonstrated stable modulation characteristics of the gain coupled distributed feedback(GC-DFB) laser diode integrated with butt-coupled InGaAsP/InGaAsP strain compensated MQW(multiple-Quantum-well) modulator for high speed optical transmission. For this purpose, we have adopted the InGaAsP/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinction ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17GHz. We also found that the alpha parameter becomes negative at below a -0.6 V bias voltage. We transmitted 10 Gbps NRZ electrical signal over 90 km of standard single mode optical fiber (SMF). A clearly opened eye diagram was observed in the modulated output.

  1. From Modules to a Generator: An Integrated Heat Exchanger Concept for Car Applications of a Thermoelectric Generator

    Science.gov (United States)

    Bosch, Henry

    2016-03-01

    A heat exchanger concept for a thermoelectric generator with integrated planar modules for passenger car applications is introduced. The module housings, made of deep drawn stainless steel sheet metal, are brazed onto the exhaust gas channel to achieve an optimal heat transfer on the hot side of the modules. The cooling side consists of winding fluid channels, which are mounted directly onto the cold side of the modules. Only a thin foil separates the cooling media from the modules for an almost direct heat contact on the cooling side. Thermoelectric generators with up to 20 modules made of PbTe and Bi2Te3, respectively, are manufactured and tested on a hot gas generator to investigate electrical power output and performance of the thermoelectric generator. The proof of concept of the light weight heat exchanger design made of sheet metal with integrated modules is positively accomplished.

  2. Design, Integration, Certification and Testing of the Orion Crew Module Propulsion System

    Science.gov (United States)

    McKay, Heather; Coffman, Eric; May, Sarah; Freeman, Rich; Cain, George; Albright, John; Schoenberg, Rich; Delventhal, Rex

    2014-01-01

    The Orion Crew Module Propulsion Reaction Control System is currently complete and ready for flight as part of the Orion program's first flight test, Exploration Flight Test One (EFT-1). As part of the first article design, build, test, and integration effort, several key lessons learned have been noted and are planned for incorporation into the next build of the system. This paper provides an overview of those lessons learned and a status on the Orion propulsion system progress to date.

  3. Space Station Freedom electric power system photovoltaic power module integrated launch package

    Science.gov (United States)

    Nathanson, Theodore H.; Clemens, Donald D.; Spatz, Raymond R.; Kirch, Luke A.

    1990-01-01

    The launch of the Space Station Freedom solar power module requires a weight efficient structure that will include large components within the limited load capacity of the Space Shuttle cargo bay. The design iterations to meet these requirements have evolved from a proposal concept featuring a separate cradle and integrated equipment assembly (IEA), to a package that interfaces directly with the Shuttle. Size, weight, and cost have been reduced as a result.

  4. ARN Integrated Retail Module (IRM) System at Ft. Bliss - Central Issue Facility (CIF) Local Tariff

    Science.gov (United States)

    2008-03-14

    for issue to deploying soldiers, a Central Initial Issue Point ( CIIP ) for issue to recruits, and a 3D Whole Body Scanner for obtaining body...Apparel Research Network (ARN); Integrated Retail Module (IRM), Clothing Initial Issue Point ( CIIP ); Central Issue Facility (CIF); Supply Chain...automated support to a Central Issue Facility for issue to deploying soldiers, a Central Initial Issue Point ( CIIP ) for issue to recruits, and a 3D

  5. Protecting integrated circuits from excessive charge accumulation during plasma cleaning of multichip modules

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbeck, Christopher T; Girardi, Michael

    2015-04-21

    Internal nodes of a constituent integrated circuit (IC) package of a multichip module (MCM) are protected from excessive charge during plasma cleaning of the MCM. The protected nodes are coupled to an internal common node of the IC package by respectively associated discharge paths. The common node is connected to a bond pad of the IC package. During MCM assembly, and before plasma cleaning, this bond pad receives a wire bond to a ground bond pad on the MCM substrate.

  6. Parietofrontal integrity determines neural modulation associated with grasping imagery after stroke

    Science.gov (United States)

    Modir Shanechi, Amirali; Fourkas, Alissa D.; Weber, Cornelia; Birbaumer, Niels

    2012-01-01

    Chronic stroke patients with heterogeneous lesions, but no direct damage to the primary sensorimotor cortex, are capable of longitudinally acquiring the ability to modulate sensorimotor rhythms using grasping imagery of the affected hand. Volitional modulation of neural activity can be used to drive grasping functions of the paralyzed hand through a brain–computer interface. The neural substrates underlying this skill are not known. Here, we investigated the impact of individual patient's lesion pathology on functional and structural network integrity related to this volitional skill. Magnetoencephalography data acquired throughout training was used to derive functional networks. Structural network models and local estimates of extralesional white matter microstructure were constructed using T1-weighted and diffusion-weighted magnetic resonance imaging data. We employed a graph theoretical approach to characterize emergent properties of distributed interactions between nodal brain regions of these networks. We report that interindividual variability in patients’ lesions led to differential impairment of functional and structural network characteristics related to successful post-training sensorimotor rhythm modulation skill. Patients displaying greater magnetoencephalography global cost-efficiency, a measure of information integration within the distributed functional network, achieved greater levels of skill. Analysis of lesion damage to structural network connectivity revealed that the impact on nodal betweenness centrality of the ipsilesional primary motor cortex, a measure that characterizes the importance of a brain region for integrating visuomotor information between frontal and parietal cortical regions and related thalamic nuclei, correlated with skill. Edge betweenness centrality, an analogous measure, which assesses the role of specific white matter fibre pathways in network integration, showed a similar relationship between skill and a portion of

  7. Integrated Solar Power Converters: Wafer-Level Sub-Module Integrated DC/DC Converter

    Energy Technology Data Exchange (ETDEWEB)

    None

    2012-02-09

    Solar ADEPT Project: CU-Boulder is developing advanced power conversion components that can be integrated into individual solar panels to improve energy yields. The solar energy that is absorbed and collected by a solar panel is converted into useable energy for the grid through an electronic component called an inverter. Many large, conventional solar energy systems use one, central inverter to convert energy. CU-Boulder is integrating smaller, microinverters into individual solar panels to improve the efficiency of energy collection. The University’s microinverters rely on electrical components that direct energy at high speeds and ensure that minimal energy is lost during the conversion process—improving the overall efficiency of the power conversion process. CU-Boulder is designing its power conversion devices for use on any type of solar panel.

  8. Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals.

    Science.gov (United States)

    Jiménez-Solano, Alberto; Delgado-Sánchez, José-Maria; Calvo, Mauricio E; Miranda-Muñoz, José M; Lozano, Gabriel; Sancho, Diego; Sánchez-Cortezón, Emilio; Míguez, Hernán

    2015-12-01

    Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one-dimensional photonic crystals and in-plane CuInGaSe2 (CIGS) solar cells. Highly uniform and wide-area nanostructured multilayers with photonic crystal properties were deposited by a cost-efficient and scalable liquid processing amenable to large-scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in-plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long-term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

  9. Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals

    Science.gov (United States)

    Jiménez‐Solano, Alberto; Delgado‐Sánchez, José‐Maria; Calvo, Mauricio E.; Miranda‐Muñoz, José M.; Lozano, Gabriel; Sancho, Diego; Sánchez‐Cortezón, Emilio

    2015-01-01

    Abstract Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one‐dimensional photonic crystals and in‐plane CuInGaSe2 (CIGS) solar cells. Highly uniform and wide‐area nanostructured multilayers with photonic crystal properties were deposited by a cost‐efficient and scalable liquid processing amenable to large‐scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in‐plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long‐term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. PMID:27656090

  10. A Mathematical Model for Diffusion-Controlled Monolithic Matrix Coated with outer Membrane System

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A release model for diffusion-controlled monolithic matrix coated with outer membrane system is proposed and solved by using the refined double integral method. The calculated results are in satisfactory agreement with the experimental release data. The present model can be well used to describe the release process for all cd/cs values. In addition, the release effects of the monolithic matrix coated with outer membrane system are discussed theoretically.

  11. Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

    Science.gov (United States)

    Sokolov, V.; Geddes, J.; Contolatis, A.

    A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

  12. Design and integration of a compact common miniature environment-insensitive navigation module for unmanned vehicles

    Science.gov (United States)

    Dai, Gang; Su, Wei; Li, Mei

    2010-10-01

    A common miniature environment-insensitive navigation module which not only can provide the accurate position through different environment but also can easily be configured to adapt to the different type of unmanned vehicles is proposed in this paper. The module prototype is composed of a integrated MEMS inertial navigation unit using MEMS accelerometers and gyroscopes, a hard aluminum module structure with rubber isolator, a series of sensor interface of magnetometer, embedded GPS receiver, infrared sensor, vision camera, radio frequency communication etc and a FPGA based central control and navigation calculation circuit. The fabricated MEMS accelerometers and gyroscopes can resist high-g shock and have temperature drift compensation. The structure of the module uses hard aluminum with finite element analysis to find the appropriate position for sensors. All sensors without antenna are packaged in the structure with moisture, heat isolation and rubber isolator. The navigation computation scheme use the status of connected sensors to choose appropriate algorithm function to compute the navigation output. FPGA is used to be the main control and process unit of this module. Algorithms are embedded in the FPGA using the DSP core. The multiply interfaces to other sensor are implemented using the flexible configuration of the FPGA and peripheral. The conclusions are reached at last.

  13. Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

    CERN Document Server

    Zhang, Xingyu; Subbaraman, Harish; Wang, Shiyi; Zhan, Qiwen; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Lee, Charles Y -C; Chen, Ray T

    2015-01-01

    In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as we...

  14. A radiation hard bipolar monolithic front-end readout

    CERN Document Server

    Baschirotto, A; Cappelluti, I; Castello, R; Cermesoni, M; Gola, A; Pessina, G; Pistolesi, E; Rancoita, P G; Seidman, A

    1999-01-01

    A fast bipolar monolithic charge sensitive preamplifier (CSP), implemented in the monolithic 2 mu m BiCMOS technology (called HF2CMOS) was designed and built in a quad monolithic chip. Studies of radiation effects in the CSP $9 performance, from non-irradiated and up to neutron irradiation of 5.3*10/sup 14/ n/cm/sup 2/, have confirmed that the use of bipolar npn transistors is suitable for the radiation level of the future LHC collider environment. The CSP $9 presents a new circuit solution for obtaining adequate slew rate performances which results in an integral linearity better than 0.8554330n 5 V at 20 ns of shaping time, regardless of the bias current selected for the CSP. This way $9 the bias current of the CSP can be set for optimizing the power dissipation with respect to series and parallel noise, especially useful when the CSP is put in a radiation environment. A prototype test with a novel monolithic 20 ns $9 time constant RC-CR shaper, capable to sum up four inputs has been also realized, featurin...

  15. Regulatory Snapshots: integrative mining of regulatory modules from expression time series and regulatory networks.

    Directory of Open Access Journals (Sweden)

    Joana P Gonçalves

    Full Text Available Explaining regulatory mechanisms is crucial to understand complex cellular responses leading to system perturbations. Some strategies reverse engineer regulatory interactions from experimental data, while others identify functional regulatory units (modules under the assumption that biological systems yield a modular organization. Most modular studies focus on network structure and static properties, ignoring that gene regulation is largely driven by stimulus-response behavior. Expression time series are key to gain insight into dynamics, but have been insufficiently explored by current methods, which often (1 apply generic algorithms unsuited for expression analysis over time, due to inability to maintain the chronology of events or incorporate time dependency; (2 ignore local patterns, abundant in most interesting cases of transcriptional activity; (3 neglect physical binding or lack automatic association of regulators, focusing mainly on expression patterns; or (4 limit the discovery to a predefined number of modules. We propose Regulatory Snapshots, an integrative mining approach to identify regulatory modules over time by combining transcriptional control with response, while overcoming the above challenges. Temporal biclustering is first used to reveal transcriptional modules composed of genes showing coherent expression profiles over time. Personalized ranking is then applied to prioritize prominent regulators targeting the modules at each time point using a network of documented regulatory associations and the expression data. Custom graphics are finally depicted to expose the regulatory activity in a module at consecutive time points (snapshots. Regulatory Snapshots successfully unraveled modules underlying yeast response to heat shock and human epithelial-to-mesenchymal transition, based on regulations documented in the YEASTRACT and JASPAR databases, respectively, and available expression data. Regulatory players involved in

  16. Design and fabrication of traveling wave electroabsorption modulator

    Science.gov (United States)

    Li, Guoliang; Shin, Dong-Soo; Chang, William S. C.; Asbeck, Peter M.; Yu, Paul K. L.; Sun, Chen K.; Pappert, Stephen A.; Nguyen, Richard

    2000-04-01

    Semiconductor electroabsorption modulator (EAM) is a promising alternative to lithium niobate modulator for digital and analog fiber optic links due to its inherent small size, high modulation efficiency, and potential of monolithic integration with other electronic and optoelectronic components. For high-speed application, the bandwidth of the lumped element EAM is known to be RC-time limited. To achieve an ultra large bandwidth in lumped element EAM, the modulation efficiency has to be greatly sacrificed. This is especially critical in analog operation where RF link loss and noise figure must be minimized. To overcome the RC bandwidth limit and to avoid significantly compromising the modulation efficiency, the traveling wave electroabsorption modulator has been proposed and experimentally investigated by several authors.

  17. LSST primary/tertiary monolithic mirror

    Science.gov (United States)

    Sebag, J.; Gressler, W.; Liang, M.; Neill, D.; Araujo-Hauck, C.; Andrew, J.; Angeli, G.; Cho, M.; Claver, C.; Daruich, F.; Gessner, C.; Hileman, E.; Krabbendam, V.; Muller, G.; Poczulp, G.; Repp, R.; Wiecha, O.; Xin, B.; Kenagy, K.; Martin, H. M.; Tuell, M. T.; West, S. C.

    2016-08-01

    At the core of the Large Synoptic Survey Telescope (LSST) three-mirror optical design is the primary/tertiary (M1M3) mirror that combines these two large mirrors onto one monolithic substrate. The M1M3 mirror was spin cast and polished at the Steward Observatory Mirror Lab at The University of Arizona (formerly SOML, now the Richard F. Caris Mirror Lab at the University of Arizona (RFCML)). Final acceptance of the mirror occurred during the year 2015 and the mirror is now in storage while the mirror cell assembly is being fabricated. The M1M3 mirror will be tested at RFCML after integration with its mirror cell before being shipped to Chile.

  18. Reconstruction of gene regulatory modules in cancer cell cycle by multi-source data integration.

    Directory of Open Access Journals (Sweden)

    Yuji Zhang

    Full Text Available BACKGROUND: Precise regulation of the cell cycle is crucial to the growth and development of all organisms. Understanding the regulatory mechanism of the cell cycle is crucial to unraveling many complicated diseases, most notably cancer. Multiple sources of biological data are available to study the dynamic interactions among many genes that are related to the cancer cell cycle. Integrating these informative and complementary data sources can help to infer a mutually consistent gene transcriptional regulatory network with strong similarity to the underlying gene regulatory relationships in cancer cells. RESULTS AND PRINCIPAL FINDINGS: We propose an integrative framework that infers gene regulatory modules from the cell cycle of cancer cells by incorporating multiple sources of biological data, including gene expression profiles, gene ontology, and molecular interaction. Among 846 human genes with putative roles in cell cycle regulation, we identified 46 transcription factors and 39 gene ontology groups. We reconstructed regulatory modules to infer the underlying regulatory relationships. Four regulatory network motifs were identified from the interaction network. The relationship between each transcription factor and predicted target gene groups was examined by training a recurrent neural network whose topology mimics the network motif(s to which the transcription factor was assigned. Inferred network motifs related to eight well-known cell cycle genes were confirmed by gene set enrichment analysis, binding site enrichment analysis, and comparison with previously published experimental results. CONCLUSIONS: We established a robust method that can accurately infer underlying relationships between a given transcription factor and its downstream target genes by integrating different layers of biological data. Our method could also be beneficial to biologists for predicting the components of regulatory modules in which any candidate gene is involved

  19. 40-Gb/s electroabsorption-modulated NRZ and RZ sources

    Science.gov (United States)

    Mason, T. G. Beck; Ougazzaden, Abdallah; Lentz, Charles W.; Glogovsky, Kenneth G.; Reynolds, C. L., Jr.; Przybylek, George J.; Leibenguth, Ronald E.; Kercher, Terry L.; Boardman, John W.; Rader, Michael T.; Geary, J. M.; Walters, Frank S.; Peticolas, Larry J.; Freund, James M.; Chu, George; Sirenko, Andrei; Jurcehnko, Ronald J.; Hybertsen, Mark S.; Ketelsen, Leonard J. P.; Raybon, Gregory

    2001-07-01

    Electro-absorption modulated sources are likely to be key components in the evolution of optical communication line rates from 10Gb/s to 40 Gb/s. Compared with the LiNbO3 alternative EA modulators are more compact, less expensive, compatible with monolithic integration, and offer lower drive voltages. However, fabrication complexity and open questions concerning the fidelity with which they transmit information make the exact role of 40Gb/s EA modulators in advanced communication systems somewhat unclear. In this talk we will describe the design, fabrication and transmission performance of 40Gb/s EA modulators configured for both NRZ and RZ operation. For NRZ transmission the device structure consists of a short MQW modulator with spot-size converters on the input and output ends. Tandem EA modulators for pulse carver and data encoder functions were monolithically integrated along with a semiconductor optical amplifier and input/output spot-size converters to explore RZ transmission. Both single and tandem modulator design are realized using semi-insulting InP current confined buried heterostructure technology. Modulation bandwidth of better than 50 GHz is demonstrated along with a fiber-to-fiber insertion loss of less than 6 dB for the single modulator design. The carver/encoder configuration with onboard SOA yields better than 0 dB insertion loss. Transmission impairments were studies using both designs.

  20. Psychopathic traits modulate microstructural integrity of right uncinate fasciculus in a community population

    Science.gov (United States)

    Sobhani, Mona; Baker, Laura; Martins, Bradford; Tuvblad, Catherine; Aziz-Zadeh, Lisa

    2015-01-01

    Individuals with psychopathy possess emotional and behavioral abnormalities. Two neural regions, involved in behavioral control and emotion regulation, are often implicated: amygdala and ventromedial prefrontal cortex (VMPFC). Recently, in studies using adult criminal populations, reductions in microstructural integrity of the white matter connections (i.e., uncinate fasciculus (UF)) between these two neural regions have been discovered in criminals with psychopathy, supporting the notion of neural dysfunction in the amygdala–VMPFC circuit. Here, a young adult, community sample is used to assess whether psychopathic traits modulate microstructural integrity of UF, and whether this relationship is dependent upon levels of trait anxiety, which is sometimes used to distinguish subtypes of psychopathy. Results reveal a negative association between psychopathic traits and microstructural integrity of UF, supporting previous findings. However, no moderation of the relationship by trait anxiety was discovered. Findings provide further support for the notion of altered amygdala–VMPFC connectivity in association with higher psychopathic traits. PMID:26106525

  1. Psychopathic traits modulate microstructural integrity of right uncinate fasciculus in a community population

    Directory of Open Access Journals (Sweden)

    Mona Sobhani

    2015-01-01

    Full Text Available Individuals with psychopathy possess emotional and behavioral abnormalities. Two neural regions, involved in behavioral control and emotion regulation, are often implicated: amygdala and ventromedial prefrontal cortex (VMPFC. Recently, in studies using adult criminal populations, reductions in microstructural integrity of the white matter connections (i.e., uncinate fasciculus (UF between these two neural regions have been discovered in criminals with psychopathy, supporting the notion of neural dysfunction in the amygdala–VMPFC circuit. Here, a young adult, community sample is used to assess whether psychopathic traits modulate microstructural integrity of UF, and whether this relationship is dependent upon levels of trait anxiety, which is sometimes used to distinguish subtypes of psychopathy. Results reveal a negative association between psychopathic traits and microstructural integrity of UF, supporting previous findings. However, no moderation of the relationship by trait anxiety was discovered. Findings provide further support for the notion of altered amygdala–VMPFC connectivity in association with higher psychopathic traits.

  2. Cryo-vacuum testing of the JWST Integrated Science Instrument Module (SPIE)

    Science.gov (United States)

    Kimble, Randy A.; Vila, M. Begona; Van Campen, Julie; Birkmann, Stephan M.; Comber, Brian J.; Fatig, Curtis C.; Glasse, Alistair C. H.; Glazer, Stuart D.; Kelly, Douglas M.; Mann, Steven D.; Martel, Andre R.; Novo-Gradac, Kevin J.; Ohl, Raymond G.; Penanen, Konstantin; Rohrbach, Scott O.; Sullivan, Joseph F.; Zak, Dean; Zhou, Julia

    2016-01-01

    In late 2015/early 2016, a major cryo-vacuum test was carried out for the Integrated Science Instrument Module (ISIM) of the James Webb Space Telescope (JWST). This test comprised the final cryo-certification and calibration test of the ISIM, after its ambient environmental test program (vibration, acoustics, EMI/EMC), and before its delivery for integration with the rest of the JWST observatory. Over the 108-day period of the round-the-clock test program, the full complement of ISIM flight instruments, structure, harness radiator, and electronics were put through a comprehensive program of thermal, optical, electrical, and operational tests. The test verified the health and excellent performance of the instruments and ISIM systems, proving the ISIM element's readiness for integration with the telescope. We report here on the context, goals, setup, execution, and key results for this critical JWST milestone.

  3. Habitat Demonstration Unit (HDU) Pressurized Excursion Module (PEM) Systems Integration Strategy

    Science.gov (United States)

    Gill, Tracy; Merbitz, Jerad; Kennedy, Kriss; Tri, Terry; Toups, Larry; Howe, A. Scott

    2011-01-01

    The Habitat Demonstration Unit (HDU) project team constructed an analog prototype lunar surface laboratory called the Pressurized Excursion Module (PEM). The prototype unit subsystems were integrated in a short amount of time, utilizing a rapid prototyping approach that brought together over 20 habitation-related technologies from a variety of NASA centers. This paper describes the system integration strategies and lessons learned, that allowed the PEM to be brought from paper design to working field prototype using a multi-center team. The system integration process was based on a rapid prototyping approach. Tailored design review and test and integration processes facilitated that approach. The use of collaboration tools including electronic tools as well as documentation enabled a geographically distributed team take a paper concept to an operational prototype in approximately one year. One of the major tools used in the integration strategy was a coordinated effort to accurately model all the subsystems using computer aided design (CAD), so conflicts were identified before physical components came together. A deliberate effort was made following the deployment of the HDU PEM for field operations to collect lessons learned to facilitate process improvement and inform the design of future flight or analog versions of habitat systems. Significant items within those lessons learned were limitations with the CAD integration approach and the impact of shell design on flexibility of placing systems within the HDU shell.

  4. Osmotically and thermally isolated forward osmosis-membrane distillation (fo-md) integrated module for water treatment applications

    KAUST Repository

    Ghaffour, Noreddine

    2016-09-01

    An integrated forward osmosis-membrane distillation (FO-MD) module and systems and methods incorporating the module is disclosed providing higher efficiencies and using less energy. The FO-MD module is osmotically and thermally isolated. The isolation can prevent mixing of FO draw solution/FO permeate and MD feed, and minimize dilution of FO draw solution and cooling of MD feed. The module provides MD feed solution and FO draw solution streams that flow in the same module but are separated by an isolation barrier. The osmotically and thermally isolated FO-MD integrated module, systems and methods offer higher driving forces of both FO and MD processes, higher recovery, and wider application than previously proposed hybrid FO- MD systems.

  5. Monolithic Fuel Fabrication Process Development

    Energy Technology Data Exchange (ETDEWEB)

    C. R. Clark; N. P. Hallinan; J. F. Jue; D. D. Keiser; J. M. Wight

    2006-05-01

    The pursuit of a high uranium density research reactor fuel plate has led to monolithic fuel, which possesses the greatest possible uranium density in the fuel region. Process developments in fabrication development include friction stir welding tool geometry and cooling improvements and a reduction in the length of time required to complete the transient liquid phase bonding process. Annealing effects on the microstructures of the U-10Mo foil and friction stir welded aluminum 6061 cladding are also examined.

  6. Design of integrated YIG-based isolators and high-speed modulators

    Science.gov (United States)

    Firby, C. J.; Elezzabi, A. Y.

    2016-03-01

    In this work, we present the design of integrable magnetoplasmonic isolators and modulators, based on a longrange magnetoplasmonic waveguide structure. With the addition of magnetized cerium-substituted yttrium iron garnet waveguides and planar samarium-cobalt biasing magnets to a Mach-Zehnder interferometer (MZI), we show that an efficient isolator architecture can be implemented with insertion loss of 2.51 dB and an isolation of 22.82 dB within a small footprint of 6:4 x 10-3 mm2. Additionally, employing bismuth-substituted yttrium iron garnet in a MZI and transient magnetic fields from nearby transmission lines, we propose a high-speed electrical-to-optical clock multiplier. Such a device exhibits a modulation depth of 16.26 dB, and an output modulation frequency of 279.9 MHz. Thus, input clock signals can be multiplied by factors of 2:1 x 103. These devices are envisioned as fundamental constituents of future integrated nanoplasmonic circuits.

  7. Integration of team-based learning strategies into a cardiovascular module.

    Science.gov (United States)

    Conway, Susan E; Johnson, Jeremy L; Ripley, Toni L

    2010-03-10

    To integrate components of team-based learning (TBL) into a cardiovascular module to increase students' responsibility for their own learning and actively engage students across 2 campuses in patient cases. An existing cardiovascular course module was modified by replacing 8 hours of lectures with self-directed learning (SDL) assignments and transforming case discussion sessions using TBL methodologies. Case discussions were delivered using TBL methods to increase engagement of all students across both campuses while maintaining a low faculty-to-student ratio in the classrooms. Readiness assurance quizzes were performed with each SDL assignment and TBL case session. Student and faculty satisfaction improved with the addition of SDL assignments and TBL cases without adverse effects on grades in the wake of the 14% decrease in lecture time. Total faculty time required increased primarily in the first year because of development of course materials. A modified TBL format was successfully integrated into a lecture-based cardiovascular module, resulting in improved student and faculty satisfaction with the course and no adverse effect on student performance.

  8. Development and Assessment of Modules to Integrate Quantitative Skills in Introductory Biology Courses.

    Science.gov (United States)

    Hoffman, Kathleen; Leupen, Sarah; Dowell, Kathy; Kephart, Kerrie; Leips, Jeff

    2016-01-01

    Redesigning undergraduate biology courses to integrate quantitative reasoning and skill development is critical to prepare students for careers in modern medicine and scientific research. In this paper, we report on the development, implementation, and assessment of stand-alone modules that integrate quantitative reasoning into introductory biology courses. Modules are designed to improve skills in quantitative numeracy, interpreting data sets using visual tools, and making inferences about biological phenomena using mathematical/statistical models. We also examine demographic/background data that predict student improvement in these skills through exposure to these modules. We carried out pre/postassessment tests across four semesters and used student interviews in one semester to examine how students at different levels approached quantitative problems. We found that students improved in all skills in most semesters, although there was variation in the degree of improvement among skills from semester to semester. One demographic variable, transfer status, stood out as a major predictor of the degree to which students improved (transfer students achieved much lower gains every semester, despite the fact that pretest scores in each focus area were similar between transfer and nontransfer students). We propose that increased exposure to quantitative skill development in biology courses is effective at building competency in quantitative reasoning.

  9. Pressure drop in CIM disk monolithic columns.

    Science.gov (United States)

    Mihelic, Igor; Nemec, Damjan; Podgornik, Ales; Koloini, Tine

    2005-02-11

    Pressure drop analysis in commercial CIM disk monolithic columns is presented. Experimental measurements of pressure drop are compared to hydrodynamic models usually employed for prediction of pressure drop in packed beds, e.g. free surface model and capillary model applying hydraulic radius concept. However, the comparison between pressure drop in monolith and adequate packed bed give unexpected results. Pressure drop in a CIM disk monolithic column is approximately 50% lower than in an adequate packed bed of spheres having the same hydraulic radius as CIM disk monolith; meaning they both have the same porosity and the same specific surface area. This phenomenon seems to be a consequence of the monolithic porous structure which is quite different in terms of the pore size distribution and parallel pore nonuniformity compared to the one in conventional packed beds. The number of self-similar levels for the CIM monoliths was estimated to be between 1.03 and 2.75.

  10. Divisive Gain Modulation with Dynamic Stimuli in Integrate-and-Fire Neurons

    Science.gov (United States)

    Ly, Cheng; Doiron, Brent

    2009-01-01

    The modulation of the sensitivity, or gain, of neural responses to input is an important component of neural computation. It has been shown that divisive gain modulation of neural responses can result from a stochastic shunting from balanced (mixed excitation and inhibition) background activity. This gain control scheme was developed and explored with static inputs, where the membrane and spike train statistics were stationary in time. However, input statistics, such as the firing rates of pre-synaptic neurons, are often dynamic, varying on timescales comparable to typical membrane time constants. Using a population density approach for integrate-and-fire neurons with dynamic and temporally rich inputs, we find that the same fluctuation-induced divisive gain modulation is operative for dynamic inputs driving nonequilibrium responses. Moreover, the degree of divisive scaling of the dynamic response is quantitatively the same as the steady-state responses—thus, gain modulation via balanced conductance fluctuations generalizes in a straight-forward way to a dynamic setting. PMID:19390603

  11. Divisive gain modulation with dynamic stimuli in integrate-and-fire neurons.

    Directory of Open Access Journals (Sweden)

    Cheng Ly

    2009-04-01

    Full Text Available The modulation of the sensitivity, or gain, of neural responses to input is an important component of neural computation. It has been shown that divisive gain modulation of neural responses can result from a stochastic shunting from balanced (mixed excitation and inhibition background activity. This gain control scheme was developed and explored with static inputs, where the membrane and spike train statistics were stationary in time. However, input statistics, such as the firing rates of pre-synaptic neurons, are often dynamic, varying on timescales comparable to typical membrane time constants. Using a population density approach for integrate-and-fire neurons with dynamic and temporally rich inputs, we find that the same fluctuation-induced divisive gain modulation is operative for dynamic inputs driving nonequilibrium responses. Moreover, the degree of divisive scaling of the dynamic response is quantitatively the same as the steady-state responses--thus, gain modulation via balanced conductance fluctuations generalizes in a straight-forward way to a dynamic setting.

  12. Graphene-supported metal oxide monolith

    Energy Technology Data Exchange (ETDEWEB)

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  13. Graphene-supported metal oxide monolith

    Science.gov (United States)

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  14. Spinon basis for ($\\widehat{s}\\widehat{l}^{2}$)$_{k}$ integrable highest weight modules and new character formulas

    CERN Document Server

    Bouwknegt, P G; Schoutens, K; Bouwknegt, Peter; Ludwig, Andreas W W; Schoutens, Kareljan

    1995-01-01

    In this note we review the spinon basis for the integrable highest weight modules of sl2^ at levels k\\geq1, and give the corresponding character formula. We show that our spinon basis is intimately related to the basis proposed by Foda et al. in the principal gradation of the algebra. This gives rise to new identities for the q-dimensions of the integrable modules.

  15. 60-GHz integrated-circuit high data rate quadriphase shift keying exciter and modulator

    Science.gov (United States)

    Grote, A.; Chang, K.

    1984-01-01

    An integrated-circuit quadriphase shift keying (QPSK) exciter and modulator have demonstrated excellent performance directly modulating a carrier frequency of 60 GHz with an output phase error of less than 3 degrees and maximum amplitude error of 0.5 dB. The circuit consists of a 60-GHz Gunn VCO phase-locked to a low-frequency reference source, a 4th subharmonic mixer, and a QPSK modlator packaged into a small volume of 1.8 x 2.5 x 0.35 in. The use of microstrip has the advantages of small size, light-weight, and low-cost fabrication. The unit has the potential for multigigabit data rate applications.

  16. Sub-optical wavelength acoustic wave modulation of integrated photonic resonators at microwave frequencies

    CERN Document Server

    Tadesse, Semere Ayalew

    2014-01-01

    Light-sound interactions have long been exploited in various acousto-optic devices based on bulk crystalline materials. Conventionally these devices operate in megahertz frequency range where the acoustic wavelength is much longer than the optical wavelength and a long interaction length is required to attain significant coupling. With nanoscale transducers, acoustic waves with sub-optical wavelengths can now be excited to induce strong acousto-optic coupling in nanophotonic devices. Here we demonstrate microwave frequency surface acoustic wave transducers co-integrated with nanophotonic resonators on piezoelectric aluminum nitride substrates. Acousto-optic modulation of the resonance modes at above 10 GHz with the acoustic wavelength significantly below the optical wavelength is achieved. The phase and modal matching conditions in this scheme are investigated for efficient modulation. The new acousto-optic platform can lead to novel optical devices based on nonlinear Brillouin processes and provides a direct...

  17. A SQUID gradiometer module with wire-wound pickup antenna and integrated voltage feedback circuit

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Guofeng [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Yi, E-mail: y.zhang@fz-juelich.de [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Zhang Shulin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Krause, Hans-Joachim [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); and others

    2012-10-15

    The performance of the direct readout schemes for dc SQUID, Additional Positive Feedback (APF), noise cancellation (NC) and SQUID bootstrap circuit (SBC), have been studied in conjunction with planar SQUID magnetometers. In this paper, we examine the NC technique applied to a niobium SQUID gradiometer module with an Nb wire-wound antenna connecting to a dual-loop SQUID chip with an integrated voltage feedback circuit for suppression of the preamplifier noise contribution. The sensitivity of the SQUID gradiometer module is measured to be about 1 fT/(cm {radical}Hz) in the white noise range in a magnetically shielded room. Using such gradiometer, both MCG and MEG signals are recorded.

  18. Photochemical Synthesis and Versatile Functionalization Method of a Robust Porous Poly(ethylene glycol methacrylate-co-allyl methacrylate Monolith Dedicated to Radiochemical Separation in a Centrifugal Microfluidic Platform

    Directory of Open Access Journals (Sweden)

    Marion Losno

    2016-03-01

    Full Text Available The use of a centrifugal microfluidic platform is an alternative to classical chromatographic procedures for radiochemistry. An ion-exchange support with respect to the in situ light-addressable process of elaboration is specifically designed to be incorporated as a radiochemical sample preparation module in centrifugal microsystem devices. This paper presents a systematic study of the synthesis of the polymeric porous monolith poly(ethylene glycol methacrylate-co-allyl methacrylate used as a solid-phase support and the versatile and robust photografting process of the monolith based on thiol-ene click chemistry. The polymerization reaction is investigated, varying the formulation of the polymerisable mixture. The robustness of the stationary phase was tested in concentrated nitric acid. Thanks to their unique “easy-to-use” features, centrifugal microfluidic platforms are potential successful candidates for the downscaling of chromatographic separation of radioactive samples (automation, multiplexing, easy integration in glove-boxes environment, and low cost of maintenance.

  19. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-01-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  20. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-05-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  1. HEMD: an integrated tool of human epigenetic enzymes and chemical modulators for therapeutics.

    Directory of Open Access Journals (Sweden)

    Zhimin Huang

    Full Text Available BACKGROUND: Epigenetic mechanisms mainly include DNA methylation, post-translational modifications of histones, chromatin remodeling and non-coding RNAs. All of these processes are mediated and controlled by enzymes. Abnormalities of the enzymes are involved in a variety of complex human diseases. Recently, potent natural or synthetic chemicals are utilized to establish the quantitative contributions of epigenetic regulation through the enzymes and provide novel insight for developing new therapeutics. However, the development of more specific and effective epigenetic therapeutics requires a more complete understanding of the chemical epigenomic landscape. DESCRIPTION: Here, we present a human epigenetic enzyme and modulator database (HEMD, the database which provides a central resource for the display, search, and analysis of the structure, function, and related annotation for human epigenetic enzymes and chemical modulators focused on epigenetic therapeutics. Currently, HEMD contains 269 epigenetic enzymes and 4377 modulators in three categories (activators, inhibitors, and regulators. Enzymes are annotated with detailed description of epigenetic mechanisms, catalytic processes, and related diseases, and chemical modulators with binding sites, pharmacological effect, and therapeutic uses. Integrating the information of epigenetic enzymes in HEMD should allow for the prediction of conserved features for proteins and could potentially classify them as ideal targets for experimental validation. In addition, modulators curated in HEMD can be used to investigate potent epigenetic targets for the query compound and also help chemists to implement structural modifications for the design of novel epigenetic drugs. CONCLUSIONS: HEMD could be a platform and a starting point for biologists and medicinal chemists for furthering research on epigenetic therapeutics. HEMD is freely available at http://mdl.shsmu.edu.cn/HEMD/.

  2. Integrated pathway modules using time-course metabolic profiles and EST data from Milnesium tardigradum.

    Science.gov (United States)

    Beisser, Daniela; Grohme, Markus A; Kopka, Joachim; Frohme, Marcus; Schill, Ralph O; Hengherr, Steffen; Dandekar, Thomas; Klau, Gunnar W; Dittrich, Marcus; Müller, Tobias

    2012-06-19

    Tardigrades are multicellular organisms, resistant to extreme environmental changes such as heat, drought, radiation and freezing. They outlast these conditions in an inactive form (tun) to escape damage to cellular structures and cell death. Tardigrades are apparently able to prevent or repair such damage and are therefore a crucial model organism for stress tolerance. Cultures of the tardigrade Milnesium tardigradum were dehydrated by removing the surrounding water to induce tun formation. During this process and the subsequent rehydration, metabolites were measured in a time series by GC-MS. Additionally expressed sequence tags are available, especially libraries generated from the active and inactive state. The aim of this integrated analysis is to trace changes in tardigrade metabolism and identify pathways responsible for their extreme resistance against physical stress. In this study we propose a novel integrative approach for the analysis of metabolic networks to identify modules of joint shifts on the transcriptomic and metabolic levels. We derive a tardigrade-specific metabolic network represented as an undirected graph with 3,658 nodes (metabolites) and 4,378 edges (reactions). Time course metabolite profiles are used to score the network nodes showing a significant change over time. The edges are scored according to information on enzymes from the EST data. Using this combined information, we identify a key subnetwork (functional module) of concerted changes in metabolic pathways, specific for de- and rehydration. The module is enriched in reactions showing significant changes in metabolite levels and enzyme abundance during the transition. It resembles the cessation of a measurable metabolism (e.g. glycolysis and amino acid anabolism) during the tun formation, the production of storage metabolites and bioprotectants, such as DNA stabilizers, and the generation of amino acids and cellular components from monosaccharides as carbon and energy source

  3. Integrated pathway modules using time-course metabolic profiles and EST data from Milnesium tardigradum

    Directory of Open Access Journals (Sweden)

    Beisser Daniela

    2012-06-01

    Full Text Available Abstract Background Tardigrades are multicellular organisms, resistant to extreme environmental changes such as heat, drought, radiation and freezing. They outlast these conditions in an inactive form (tun to escape damage to cellular structures and cell death. Tardigrades are apparently able to prevent or repair such damage and are therefore a crucial model organism for stress tolerance. Cultures of the tardigrade Milnesium tardigradum were dehydrated by removing the surrounding water to induce tun formation. During this process and the subsequent rehydration, metabolites were measured in a time series by GC-MS. Additionally expressed sequence tags are available, especially libraries generated from the active and inactive state. The aim of this integrated analysis is to trace changes in tardigrade metabolism and identify pathways responsible for their extreme resistance against physical stress. Results In this study we propose a novel integrative approach for the analysis of metabolic networks to identify modules of joint shifts on the transcriptomic and metabolic levels. We derive a tardigrade-specific metabolic network represented as an undirected graph with 3,658 nodes (metabolites and 4,378 edges (reactions. Time course metabolite profiles are used to score the network nodes showing a significant change over time. The edges are scored according to information on enzymes from the EST data. Using this combined information, we identify a key subnetwork (functional module of concerted changes in metabolic pathways, specific for de- and rehydration. The module is enriched in reactions showing significant changes in metabolite levels and enzyme abundance during the transition. It resembles the cessation of a measurable metabolism (e.g. glycolysis and amino acid anabolism during the tun formation, the production of storage metabolites and bioprotectants, such as DNA stabilizers, and the generation of amino acids and cellular components from

  4. Optimization of Integrated Electro-Absorption Modulated Laser Structures for 100 Gbit/s Ethernet Using Electromagnetic Simulation

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Kazmierski, Christophe; Jany, Christophe;

    2007-01-01

    In this paper three options for very-high bit rate integrated electro-absorption modulated laser (EML) structures are investigated using electromagnetic simulation. A physics based distributed equivalent circuit model taking the slowwave propagation characteristics of the modulation signal...... into account is proposed for the electro-absorption modulator (EAM)electrode arrangement. This model makes it possible to apply an EM/circuit co-simulation approach to estimate the electrical to optical transmission bandwidth for the integrated EML. It is shown that a transmission bandwidth of 70 GHz seems...

  5. Self-powered electrochromic display as an example for integrated modules in printed electronics applications

    Science.gov (United States)

    Möller, M.; Leyland, N.; Copeland, G.; Cassidy, M.

    2010-09-01

    The growing market for flexible electronics devices is asking for reduction of manufacturing process complexity. One way to reduce complexity is to decrease the number of single components of a device by using integrated modules, i.e. device components providing multiple functions. In this article, the concept of a self-powered electrochromic graphics display device is demonstrated. The device is based on a three electrode system comprising an electrochromic electrode, a battery anode and a battery cathode, all in contact with a common electrolyte. The electrochromic electrode can be charged and discharged directly when connected to either the anode or cathode. Such a self-powered display integrates the functions of both a display and a battery. As part of a flexible electronics device, a self-powered display would be able to power other components, such as driver electronics.

  6. Rogue waves, rational solitons, and modulational instability in an integrable fifth-order nonlinear Schroedinger equation

    CERN Document Server

    Yang, Yunqing; Malomed, Boris A

    2015-01-01

    We analytically study rogue-wave (RW) solutions and rational solitons of an integrable fifth-order nonlinear Schr\\"odinger (FONLS) equation with three free parameters. It includes, as particular cases, the usual NLS, Hirota, and Lakshmanan-Porsezian-Daniel (LPD) equations. We present continuous-wave (CW) solutions and conditions for their modulation instability in the framework of this model. Applying the Darboux transformation to the CW input, novel first- and second-order RW solutions of the FONLS equation are analytically found. In particular, trajectories of motion of peaks and depressions of profiles of the first- and second-order RWs are produced by means of analytical and numerical methods. The solutions also include newly found rational and W-shaped one- and two-soliton modes. The results predict the corresponding dynamical phenomena in extended models of nonlinear fiber optics and other physically relevant integrable systems.

  7. Spectral characterization of integrated acousto-optic tunable filters by means of laser frequency modulation spectroscopy.

    Science.gov (United States)

    Di Maio, Antonio; Salza, Mario; Gagliardi, Gianluca; Ferraro, Pietro; De Natale, Paolo

    2006-12-20

    The spectral characteristics of an integrated acousto-optic tunable filter (AOTF) as well as its responsivity to the rf driving signal and sensitivity to temperature changes are experimentally investigated and quantified using a diode-laser-based interrogation system. A spectroscopic technique, exploiting the rf frequency modulation of the laser beam and the phase-sensitive detection of the AOTF transmission, has been used for this purpose. That allows for the generation of a dispersivelike signal, which serves as a reference for tracking any wavelength change of the filter's peak with high resolution. The possibility of using the integrated AOTF as a spectrum analyzer with this interrogation scheme for fiber Bragg grating (FBG) strain sensing is also discussed.

  8. A High Dynamic Range and Low Power Consumption Audio Delta-Sigma Modulator with Opamp Sharing Technique among Three Integrators

    Science.gov (United States)

    Kanemoto, Daisuke; Ido, Toru; Taniguchi, Kenji

    A low power and high performance with third order delta-sigma modulator for audio applications, fabricated in a 0.18µm CMOS process, is presented. The modulator utilizes a third order noise shaping with only one opamp by using an opamp sharing technique. The opamp sharing among three integrator stages is achieved through the optimal operation timing, which makes use of the load capacitance differences between the three integrator stages. The designed modulator achieves 101.1dB signal-to-noise ratio (A-weighted) and 101.5dB dynamic range (A-weighted) with 7.5mW power consumption from a 3.3V supply. The die area is 1.27mm2. The fabricated delta-sigma modulator achieves the highest figure-of-merit among published high performance low power audio delta-sigma modulators.

  9. Piezoresistive Sensors Development Using Monolithic CMOS MEMS Technology

    Directory of Open Access Journals (Sweden)

    A. Chaehoi

    2011-04-01

    Full Text Available This paper presents the development of a monolithic CMOS-MEMS platform under the iDesign and SemeMEMS projects with the aim of jointly providing an open access “one-stop-shop” design and prototyping facility for integrated CMOS-MEMS. This work addresses the implementation of a 3-axis accelerometer and a pressure sensor using Semefab’s in-house 2-poly 1-metal CMOS process on a 380/4/15 μm SOI wafer; the membrane and the proof mass being micromachined using double-sided Deep Reactive Ion Etching (DRIE. This monolithic approach promises, in high volume production and using low complexity processes, a dramatic cost reduction over hybrid sensors. Furthermore, the embedded signal conditioning and the low-noise level in polysilicon gauges enables high performance to be achieved by implementing dedicated on-chip amplification and filtering circuitry.

  10. Integrated optoelectronic devices by selective-area epitaxy

    Science.gov (United States)

    Jones, A. M.; Coleman, James J.

    1997-01-01

    The development of a simulation model for selective-area epitaxy and the fabrication of semiconductor lasers monolithically integrated with electroabsorption modulators by this technique are presented. Diffusion equations and boundary conditions from selective-area MOCVD theory are applied in a computational model to predict column III reactant concentrations, and self-consistent solutions for reaction parameters are found using the finite element method. Data are presented to demonstrate accurate predictions of the thickness and composition of selectively grown ternary InGaAs quantum wells. This model was utilized to design the selective growth mask for Fabry-Perot lasers integrated with intracavity electroabsorption modulators. These devices, with modulator lengths of 290, 620, and 1020 micrometer, exhibit cw threshold currents of 9, 7.5, and 7.5 mA, respectively. Also, extinction ratios of 16.5, 19.5, and 20.5 dB, respectively, are measured at a modulator reverse bias of 2 V. Distributed Bragg reflector lasers with monolithically integrated external cavity modulators are also fabricated, and the selective-area MOCVD simulation was employed to design the growth mask dimensions and the location of the gratings. Cw threshold currents of 10.5 mA, slope efficiencies of 0.21 W/A, and extinction ratios of 18 dB at a modulator reverse bias of 1.0 V are achieved for these devices.

  11. Dual-light control of nanomachines that integrate motor and modulator subunits

    Science.gov (United States)

    Foy, Justin T.; Li, Quan; Goujon, Antoine; Colard-Itté, Jean-Rémy; Fuks, Gad; Moulin, Emilie; Schiffmann, Olivier; Dattler, Damien; Funeriu, Daniel P.; Giuseppone, Nicolas

    2017-07-01

    A current challenge in the field of artificial molecular machines is the synthesis and implementation of systems that can produce useful work when fuelled with a constant source of external energy. The first experimental achievements of this kind consisted of machines with continuous unidirectional rotations and translations that make use of 'Brownian ratchets' to bias random motions. An intrinsic limitation of such designs is that an inversion of directionality requires heavy chemical modifications in the structure of the actuating motor part. Here we show that by connecting subunits made of both unidirectional light-driven rotary motors and modulators, which respectively braid and unbraid polymer chains in crosslinked networks, it becomes possible to reverse their integrated motion at all scales. The photostationary state of the system can be tuned by modulation of frequencies using two irradiation wavelengths. Under this out-of-equilibrium condition, the global work output (measured as the contraction or expansion of the material) is controlled by the net flux of clockwise and anticlockwise rotations between the motors and the modulators.

  12. Integration of Chinese medicine with Western medicine could lead to future medicine: molecular module medicine.

    Science.gov (United States)

    Zhang, Chi; Zhang, Ge; Chen, Ke-ji; Lu, Ai-ping

    2016-04-01

    The development of an effective classification method for human health conditions is essential for precise diagnosis and delivery of tailored therapy to individuals. Contemporary classification of disease systems has properties that limit its information content and usability. Chinese medicine pattern classification has been incorporated with disease classification, and this integrated classification method became more precise because of the increased understanding of the molecular mechanisms. However, we are still facing the complexity of diseases and patterns in the classification of health conditions. With continuing advances in omics methodologies and instrumentation, we are proposing a new classification approach: molecular module classification, which is applying molecular modules to classifying human health status. The initiative would be precisely defining the health status, providing accurate diagnoses, optimizing the therapeutics and improving new drug discovery strategy. Therefore, there would be no current disease diagnosis, no disease pattern classification, and in the future, a new medicine based on this classification, molecular module medicine, could redefine health statuses and reshape the clinical practice.

  13. OPENCORE NMR: open-source core modules for implementing an integrated FPGA-based NMR spectrometer.

    Science.gov (United States)

    Takeda, Kazuyuki

    2008-06-01

    A tool kit for implementing an integrated FPGA-based NMR spectrometer [K. Takeda, A highly integrated FPGA-based nuclear magnetic resonance spectrometer, Rev. Sci. Instrum. 78 (2007) 033103], referred to as the OPENCORE NMR spectrometer, is open to public. The system is composed of an FPGA chip and several peripheral boards for USB communication, direct-digital synthesis (DDS), RF transmission, signal acquisition, etc. Inside the FPGA chip have been implemented a number of digital modules including three pulse programmers, the digital part of DDS, a digital quadrature demodulator, dual digital low-pass filters, and a PC interface. These FPGA core modules are written in VHDL, and their source codes are available on our website. This work aims at providing sufficient information with which one can, given some facility in circuit board manufacturing, reproduce the OPENCORE NMR spectrometer presented here. Also, the users are encouraged to modify the design of spectrometer according to their own specific needs. A home-built NMR spectrometer can serve complementary roles to a sophisticated commercial spectrometer, should one comes across such new ideas that require heavy modification to hardware inside the spectrometer. This work can lower the barrier of building a handmade NMR spectrometer in the laboratory, and promote novel and exciting NMR experiments.

  14. Integration of PV modules in existing Romanian buildings from rural areas

    Energy Technology Data Exchange (ETDEWEB)

    Fara, S.; Finta, D. [IPA SA Research Development, Engineering and Manufacturing for Automation Equipment and Systems, Bucharest (Romania); Fara, L.; Comaneci, D. [Polytechnic Univ. of Bucharest (Romania); Dabija, A.M. [Univ. of Architecture and Urbanism Ion Mincu, Bucharest (Romania); Tulcan-Paulescu, E. [West Univ. of Timisoara, Timisoara (Romania)

    2010-07-01

    Romania has launched a national research project to promote the use of distributed solar architecture and the use of BIPV systems. These systems include solar tunnels and active solar photovoltaic (PV) systems installed on the roofs and facades of buildings in rural areas. In contrast to other EU states, Romania does not have a photovoltaic building construction branch. The number of isolated cases are insufficient to identify a starting point regarding the PV market in the building industry. The main objective of the project is to demonstrate the efficiency of integrating various PV elements in buildings from rural areas, to test them and to make them known so that they can be used on a large scale. This will be accomplished by installing new products on 2 buildings in Bucharest and in 1 building in Timisoara. The PV modules will be integrated with the architecture. One of the buildings will be a historical building while the other 2 will be new buildings with different typologies. The installed power for each building will be of about 1.000 Wp, including some technologies with PV modules.

  15. Development of an Air-Source Heat Pump Integrated with a Water Heating / Dehumidification Module

    Energy Technology Data Exchange (ETDEWEB)

    Rice, C Keith [ORNL; Uselton, Robert B. [Lennox Industries, Inc; Shen, Bo [ORNL; Baxter, Van D [ORNL; Shrestha, Som S [ORNL

    2014-01-01

    A residential-sized dual air-source integrated heat pump (AS-IHP) concept is under development in partnership between ORNL and a manufacturer. The concept design consists of a two-stage air-source heat pump (ASHP) coupled on the air distribution side with a separate novel water heating/dehumidification (WH/DH) module. The motivation for this unusual equipment combination is the forecast trend for home sensible loads to be reduced more than latent loads. Integration of water heating with a space dehumidification cycle addresses humidity control while performing double-duty. This approach can be applied to retrofit/upgrade applications as well as new construction. A WH/DH module capable of ~1.47 L/h water removal and ~2 kW water heating capacity was assembled by the manufacturer. A heat pump system model was used to guide the controls design; lab testing was conducted and used to calibrate the models. Performance maps were generated and used in a TRNSYS sub-hourly simulation to predict annual performance in a well-insulated house. Annual HVAC/WH energy savings of ~35% are predicted in cold and hot-humid U.S. climates compared to a minimum efficiency baseline.

  16. Compact monolithic capacitive discharge unit

    Science.gov (United States)

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  17. ATLAS ITk Short Strip Prototype Module with Integrated DCDC Powering and Control Phase II Upgrade of the ATLAS Inner Tracker detector at the HL - LHC

    CERN Document Server

    Greenall, Ashley; The ATLAS collaboration

    2017-01-01

    The prototype Barrel module design, for the Phase II upgrade of the of the new Inner Tracker (ITk) detector at the LHC, has adopted an integrated low mass assembly featuring single-sided flexible circuits, with readout ASICs, glued to the silicon strip sensor. Further integration has been achieved by the attachment of module DCDC powering, HV sensor biasing switch and autonomous monitoring and control to the sensor. This low mass, integrated module approach benefits further in a reduced width stave structure to which the modules are attached. The results of preliminary electrical tests of such an integrated module will be presented.

  18. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

    CERN Document Server

    Gao, Yuanda; Gan, Xuetao; Li, Luozhou; Peng, Cheng; Meric, Inanc; Wang, Lei; Szep, Attila; Walker, Dennis; Hone, James; Englund, Dirk

    2014-01-01

    Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modul...

  19. High-power coherent phased array of monolithic flared amplifier-master oscillator power amplifiers (MFA-MOPAs)

    Science.gov (United States)

    Osinski, Jules S.; Mehuys, David G.; Welch, David F.; Dzurko, Kenneth M.; Lang, Robert J.

    1995-04-01

    A monolithically integrated array of InGaAs/AlGaAs flared amplifiers driven by a single DBR laser through a power splitter network and individually addressed phase modulators is described. Phase adjustment of > 2(pi) per element by free-carrier effects is verified by monitoring the interference pattern of 4 emitters, and typically requires 5 W, and, combined with the proper external lensing, could therefore result in an ultra-narrow, single-lobed far-field pattern whose width is determined by the extended aperture of the array. This architecture is capable of providing single-mode, diffraction-limited performance from each emitter and is scalable to unprecedented power levels. Over 20 W of pulsed, spectrally coherent emission is generated at 955 nm from a 4-element array, and 39 W is obtained from an 8-element array.

  20. Integration of variable-rate OWC with OFDM-PON for hybrid optical access based on adaptive envelope modulation

    Science.gov (United States)

    Chen, Chen; Zhong, Wen-De; Wu, Dehao

    2016-12-01

    In this paper, we investigate an integrated optical wireless communication (OWC) and orthogonal frequency division multiplexing based passive optical network (OFDM-PON) system for hybrid wired and wireless optical access, based on an adaptive envelope modulation technique. Both the outdoor and indoor wireless communications are considered in the integrated system. The data for wired access is carried by a conventional OFDM signal, while the data for wireless access is carried by an M-ary pulse amplitude modulation (M-PAM) signal which is modulated onto the envelope of a phase-modulated OFDM signal. By adaptively modulating the wireless M-PAM signal onto the envelope of the wired phase-modulated constant envelope OFDM (CE-OFDM) signal, hybrid wired and wireless optical access can be seamlessly integrated and variable-rate optical wireless transmission can also be achieved. Analytical bit-error-rate (BER) expressions are derived for both the CE-OFDM signal with M-PAM overlay and the overlaid unipolar M-PAM signal, which are verified by Monte Carlo simulations. The BER performances of wired access, indoor OWC wireless access and outdoor OWC wireless access are evaluated. Moreover, variable-rate indoor and outdoor optical wireless access based on the adaptive envelope modulation technique is also discussed.