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Sample records for monolithic integrated circuit

  1. Monolithic microwave integrated circuits

    Science.gov (United States)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  2. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    Science.gov (United States)

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  3. Hybrid and monolithic integration of planar lightwave circuits (PLCs)

    Science.gov (United States)

    Chen, Ray T.

    2008-02-01

    In this paper, we review the status of monolithic and hybrid integration of planar lightwave circuits (PLCs). Building blocks needed for system integration based on polymeric materials, III-V semiconductor materials, LiNbO 3 and SOI on Silicon are summarized with pros and cons. Due to the maturity of silicon CMOS technology, silicon becomes the platform of choice for optical application specific integrated circuits (OASICs). However, the indirect bandgap of silicon makes the formation of electrically pumped silicon laser a remote plausibility which requires hybrid integration of laser sources made out of III-V compound semicouductor.

  4. Monolithic microwave integrated circuit devices for active array antennas

    Science.gov (United States)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  5. Monolithic Microwave Integrated Circuit (MMIC) Phased Array Demonstrated With ACTS

    Science.gov (United States)

    1996-01-01

    Monolithic Microwave Integrated Circuit (MMIC) arrays developed by the NASA Lewis Research Center and the Air Force Rome Laboratory were demonstrated in aeronautical terminals and in mobile or fixed Earth terminals linked with NASA's Advanced Communications Technology Satellite (ACTS). Four K/Ka-band experimental arrays were demonstrated between May 1994 and May 1995. Each array had GaAs MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The 30-GHz transmit array used in uplinks to ACTS was developed by Lewis and Texas Instruments. The three 20-GHz receive arrays used in downlinks from ACTS were developed in cooperation with the Air Force Rome Laboratory, taking advantage of existing Air Force integrated-circuit, active-phased-array development contracts with the Boeing Company and Lockheed Martin Corporation. Four demonstrations, each related to an application of high interest to both commercial and Department of Defense organizations, were conducted. The location, type of link, and the data rate achieved for each of the applications is shown. In one demonstration-- an aeronautical terminal experiment called AERO-X--a duplex voice link between an aeronautical terminal on the Lewis Learjet and ACTS was achieved. Two others demonstrated duplex voice links (and in one case, interactive video links as well) between ACTS and an Army high-mobility, multipurpose wheeled vehicle (HMMWV, or "humvee"). In the fourth demonstration, the array was on a fixed mount and was electronically steered toward ACTS. Lewis served as project manager for all demonstrations and as overall system integrator. Lewis engineers developed the array system including a controller for open-loop tracking of ACTS during flight and HMMWV motion, as well as a laptop data display and recording system used in all demonstrations. The Jet Propulsion Laboratory supported the AERO-X program, providing elements of the ACTS Mobile Terminal. The successful

  6. Design and application of multilayer monolithic microwave integrated circuit transformers

    Energy Technology Data Exchange (ETDEWEB)

    Economides, S.B

    1999-07-01

    fabricated on standard foundry processes. With careful modelling it is also feasible to integrate the two couplers into a single tri-filar transformer structure. This is a robust balun topology, which could be widely adopted. A push-pull MESFET amplifier with 8 dB gain demonstrated this at 12 GHz, using the balun chips connected to amplifier circuits. (author)

  7. Design and Fabrication of a Monolithic Optoelectronic Integrated Circuit Chip Based on CMOS Compatible Technology

    Institute of Scientific and Technical Information of China (English)

    GUO Wei-Feng; ZHAO Yong; WANG Wan-Jun; SHAO Hai-Feng; YANG Jian-Yi; JIANG Xiao-Qing

    2012-01-01

    A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology.The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function.Test results show that the extinction ratio of the MZM is close to 20dB and the small-signal gain of the CMOS driving circuit is about 26.9dB.A 50m V 10 MHz sine wave signal is amplified by the driving circuit,and then drives the MZM successfully.%A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9dB. A 50mV 10MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.

  8. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  9. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  10. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    Science.gov (United States)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-02-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  11. A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

    Science.gov (United States)

    Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

    1987-01-01

    A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

  12. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core......, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 d...

  13. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  14. Monolithically mode division multiplexing photonic integrated circuit for large-capacity optical interconnection.

    Science.gov (United States)

    Chen, Guanyu; Yu, Yu; Zhang, Xinliang

    2016-08-01

    We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.

  15. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Science.gov (United States)

    Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

    2017-02-01

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

  16. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

    Science.gov (United States)

    Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

    2017-01-01

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit. PMID:28195239

  17. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    Science.gov (United States)

    Bickford, Justin Robert

    Waferbonding is a technique that integrates different semiconductors together, in order to obtain hybrid structures that exploit the strengths of each material. Work was done at the University of California at San Diego to investigate the waferbonding of III/V compound semiconductors to silicon using a metal interface. GaAs and other III/V compound semiconductors surpass silicon in their ability to create high performance microwave devices, while silicon offers an inexpensive platform with a proven digital architecture that can interface with microwave devices and support passive components and driver circuitry. Intimate integration of the two will be required, as mixed RF/digital and optical/digital systems for communications devices such as cell phones, wi-fi, and optical communications systems are pushed smaller, faster, and to higher power. The metalbonding implementation of a proposed heterogeneous monolithic microwave integrated circuit (HMMIC) system was investigated, and was shown to extend the capabilities of existing homogeneous monolithic microwave integrated circuit (MMIC) systems. The main goals of this work were two-fold; first to implement a robust heterogeneous integration technique, and second, to show that this approach uniquely improves upon existing microwave integration technology. The metalbonding technique investigated sparsely integrated GaAs structures onto silicon, in pursuit of this HMMIC scheme. Both bottom-up and top-down fabrication methods were implemented. These approaches required the development of a myriad of meticulously designed fabrication procedures capable of avoiding the many incompatibilities between the compound semiconductor, bondmetal, and silicon materials. The bondmetal interface, provided by these techniques, broadens the scope of existing monolithic microwave integrated circuit technology design possibilities. Essential bond interface properties were measured to establish the performance of this heterogeneous

  18. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Vinayak, Seema [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India)]. E-mail: seema_vinayak@rediffmail.com; Vyas, H.P. [Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India); Muraleedharan, K. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad-500058 (India); Vankar, V.D. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi- 110016 (India)

    2006-08-30

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R {sub S}) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R {sub S} and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition.

  19. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.

    1991-01-01

    InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

  20. Investigation of Microwave Monolithic Integrated Circuit (MMIC) non-reciprocal millimeterwave components

    Science.gov (United States)

    Talisa, S. H.; Krishnaswamy, S. V.; Adam, J. D.; Yoo, K. C.; Doyle, N. J.

    1991-09-01

    Two ferrite film deposition techniques were investigated in this program for possible use in the monolithic integration of Gallium Arsenide electronic and magnetic millimeter-wave devices; (1) spin-spray plating (SSP) of nickel zinc ferrite films, and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP technique potential for this application was demonstrated. Film structural characteristics were studied, as well as their adhesions to other substrates and the conditions for growth of thicker films. Multilayers totalling 25 microns in thickness were grown on semiconducting substrates. The SSP process occurs at about 100 C and was experimentally demonstrated not to damage Gallium arsenide MMIC devices. The magnetic characteristics of these films were comparable to ceramic materials. A scheme for the monolithic integration of magnetic and Gallium arsenide electronic devices was proposed and its feasibility experimentally demonstrated. The films showed higher dielectric loss than was desirable, possibly owing to high water content. A better drying technique is required. Barium ferrite films with C-axis texture were reproducibly grown on sapphire. Magnetic measurements yielded acceptable saturation magnetization and anisotrophy field. Ferromagnetic resonance was not observed, possibly due to broad linewidths.

  1. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    Science.gov (United States)

    Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

    1991-01-01

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

  2. Back End of Line Nanorelays for Ultra-low Power Monolithic Integrated NEMS-CMOS Circuits

    KAUST Repository

    Lechuga Aranda, Jesus Javier

    2016-05-01

    Since the introduction of Complementary-Metal-Oxide-Semiconductor (CMOS) technology, the chip industry has enjoyed many benefits of transistor feature size scaling, including higher speed and device density and improved energy efficiency. However, in the recent years, the IC designers have encountered a few roadblocks, namely reaching the physical limits of scaling and also increased device leakage which has resulted in a slow-down of supply voltage and power density scaling. Therefore, there has been an extensive hunt for alternative circuit architectures and switching devices that can alleviate or eliminate the current crisis in the semiconductor industry. The Nano-Electro-Mechanical (NEM) relay is a promising alternative switch that offers zero leakage and abrupt turn-on behaviour. Even though these devices are intrinsically slower than CMOS transistors, new circuit design techniques tailored for the electromechanical properties of such devices can be leveraged to design medium performance, ultra-low power integrated circuits. In this thesis, we deal with a new generation of such devices that is built in the back end of line (BEOL) CMOS process and is an ideal option for full integration with current CMOS transistor technology. Simulation and verification at the circuit and system level is a critical step in the design flow of microelectronic circuits, and this is especially important for new technologies that lack the standard design infrastructure and well-known verification platforms. Although most of the physical and electrical properties of NEM structures can be simulated using standard electronic automation software, there is no report of a reliable behavioural model for NEMS switches that enable large circuit simulations. In this work, we present an optimised model of a BEOL nano relay that encompasses all the electromechanical characteristics of the device and is robust and lightweight enough for VLSI applications that require simulation of thousands of

  3. Evolution of the Department of Defense Millimeter and Microwave Monolithic Integrated Circuit Program

    Science.gov (United States)

    2007-02-01

    Dertouzos, Michael; Lester, Richard K.; Solow , Robert M.; Thorow, Lester C., “Toward a New Industrial America Scientific American, June 1989, pp...Vladimir Gelnovatch, Director of the U.S. Army Electronics Technology and Devices Laboratory; and Robert Heaston, Office of Under Secretary of Defense...Jack S. Kilby and Robert N. Noyce shared honors for the achievement. Hybrid microwave and millimeter wave integrated circuits achieved greater

  4. Large microwave tunability of GaAs-based multiferroic heterostructure for applications in monolithic microwave integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yajie; Gao Jinsheng; Vittoria, C; Harris, V G [Center for Microwave Magnetic Materials and Integrated Circuits, and the Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115 (United States); Heiman, D, E-mail: y.chen@neu.ed [Department of Physics, Northeastern University, Boston, MA 02115 (United States)

    2010-12-15

    Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co{sub 2}MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate-lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm{sup -1} resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV{sup -1}. This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.

  5. Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems

    Science.gov (United States)

    1989-05-01

    methods," SIAM J. as a Consultant to DOD on the VHSIC and various monolithic programs Numer. Anal., vol. 20, no. 3, pp. 510-536, 1983. and industrial ...algorithm," Acta Electronica Sinica. vol. 14, no. 4, pp. 91-96, 1986. Neglecting the higher order terms, we can express ,(x) 161 J. E. Dennis. Jr

  6. Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMIC's)

    Science.gov (United States)

    Fan, Mark S.; Christou, Aris; Pecht, Michael G.

    1992-01-01

    Numerical simulations of the two-dimensional temperature distributions for a typical GaAs MMIC circuit are conducted, aiming at understanding the heat conduction process of the circuit chip and providing temperature information for device reliability analysis. The method used is to solve the two-dimensional heat conduction equation with a control-volume-based finite difference scheme. In particular, the effects of the power dissipation and the ambient temperature are examined, and the criterion for the worst operating environment is discussed in terms of the allowed highest device junction temperature.

  7. Dry Etching of GaAs to Fabricate Via-Hole Grounds in Monolithic Microwave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    D.S. Rawal

    2009-07-01

    Full Text Available This study investigates the dry etching of 60 mm dia, 200 mm deep holes for fabrication of through substrate via holes for grounding monolithic microwave integrated circuits (MMICs, on 3-inch dia semiinsulating GaAs wafer using RIE and ICP processes with CFC and non-CFC gas chemistry, respectively. The effect of various process parameters on GaAs etch rate and resultant etch profile was investigated. Two kinds of masks, photoresist and Ni, were used to etch GaAs and performance was compared by investigating effect on etch rate, etch depth, etch profile, and surface morphology. The etch profile, etch depth, and surface morphology of as-etched samples were characterised by scanning electron microscopy. The desired 200 mm deep strawberry profile was obtained at 40 mTorr for both RIE and ICP processes with an etch rate of ~1.3 mm/min and ~4 mm/min respectively. Ni metal mask was used for RIE process due to poor photoresist selectivity, whereas ICP process utilised photoresist as mask. The vias were then metallised by depositing a thin seed layer of Ti/Au (1000 Å using radio frequency sputtering and Au (~5 mm electroplated to connect the frontside pad and back side ground plane. The typical parasitic inductance offered by these via for RIE and ICP processes was ~76 pH and 83 pH respectively, which is well within the acceptable limits. The developed process was finally integrated to in-house MMIC production line.Defence Science Journal, 2009, 59(4, pp.363-370, DOI:http://dx.doi.org/10.14429/dsj.59.1535

  8. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    Science.gov (United States)

    Leonard, Regis F.; Bhasin, Kul B.

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure. (For individual items see A93-25777 to A93-25814)

  9. Bioluminescent bioreporter integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Simpson, Michael L. (Knoxville, TN); Sayler, Gary S. (Blaine, TN); Paulus, Michael J. (Knoxville, TN)

    2000-01-01

    Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for environmental pollutant detection, oil exploration, drug discovery, industrial process control, and hazardous chemical monitoring.

  10. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  11. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  12. Monolithic Integration of GaN-based LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, University of Tokushima 2-1 Minami-Josanjima, Tokushima 770-8506 (Japan)

    2011-02-01

    The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for high-voltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.

  13. Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

    Science.gov (United States)

    Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

    2017-08-16

    The mid-infrared (2.5 infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

  14. Interferometric wavelength converter operating at 10 Gb/s based on a monolithic-integrated photonic circuit

    Science.gov (United States)

    Rigo, C.; Coriasso, C.; Campi, D.; Stano, A.; Cacciatore, C.; Re, D.; Fornuto, G.; Soldani, D.; De Franceschi, R.; Ghiglieno, F.; Vallone, M.; Valenti, P.; Zucchelli, L.; Lupo, S.; Gambini, P.

    2000-02-01

    In this work we present a wavelength converter based on a Michelson interferometer. It is obtained by monolithic integration of two-semiconductor optical amplifiers with a passive waveguided X-coupler, incorporating turning mirrors. It operates in the 1.55 μm spectral window and allows the wavelength conversion of data streams up to 10 Gb/s, showing open-eye diagrams and extinction-ratio regeneration capabilities. Comparison of two structures with different active layers and their influence on the polarization sensitivity is also presented.

  15. Monolithic readout circuits for RHIC

    Energy Technology Data Exchange (ETDEWEB)

    O`Connor, P.; Harder, J. [Brookhaven National Laboratory, Upton, NY (United States)

    1991-12-31

    Several CMOS ASICs have been developed for a proposed RHIC experiment. This paper discusses why ASIC implementation was chosen for certain functions, circuit specifications and the design techniques used to meet them, and results of simulations and early prototypes. By working closely together from an early stage in the planning process, in-house ASIC designers and detector and data acquisition experimenters can achieve optimal use of this important technology.

  16. Monolithic readout circuits for RHIC

    Energy Technology Data Exchange (ETDEWEB)

    O`Connor, P.; Harder, J. [Brookhaven National Laboratory, Upton, NY (United States)

    1991-12-31

    Several CMOS ASICs have been developed for a proposed RHIC experiment. This paper discusses why ASIC implementation was chosen for certain functions, circuit specifications and the design techniques used to meet them, and results of simulations and early prototypes. By working closely together from an early stage in the planning process, in-house ASIC designers and detector and data acquisition experimenters can achieve optimal use of this important technology.

  17. Robotic Tactile Sensors Fabricated from a Monolithic Silicon Integrated Circuit and a Piezoelectric Polyvinylidene Fluoride Thin Film

    Science.gov (United States)

    1991-12-01

    quartz crystals has been in the communications industry , where the crystals were used in very selective band-pass filters in lbroad-bland carrier...PVDF on .Silicon Integrated Circuit."* Sensors and A4ctuators, 27:. 167-172 (191). 86. Park, 1K. and others. "’A PVDF Tactile Sensor for Industrial ...G. E. Neville. -Jr. "The Induced Vibration Touch Sensor - A New Dynamic Touch Sensing Systemn," Robotica , 4: 27-31 (1986). 88. Paul. C. R. and S. A

  18. Full Wave Analysis of Passive Microwave Monolithic Integrated Circuit Devices Using a Generalized Finite Difference Time Domain (GFDTD) Algorithm

    Science.gov (United States)

    Lansing, Faiza S.; Rascoe, Daniel L.

    1993-01-01

    This paper presents a modified Finite-Difference Time-Domain (FDTD) technique using a generalized conformed orthogonal grid. The use of the Conformed Orthogonal Grid, Finite Difference Time Domain (GFDTD) enables the designer to match all the circuit dimensions, hence eliminating a major source o error in the analysis.

  19. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7.......5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated...

  20. Planar, monolithically integrated coil

    NARCIS (Netherlands)

    Roozeboom, F.; Reefman, D.; Klootwijk, J.H.; Tiemeijer, L.F.; Ruigrok, J.

    2013-01-01

    The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for

  1. Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

    Energy Technology Data Exchange (ETDEWEB)

    Varner, R.L.; Blankenship, J.L.; Beene, J.R. [Oak Ridge National Lab., TN (United States); Todd, R.A. [RIS Corp., Oak Ridge, TN (United States)

    1998-02-01

    Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beam Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.

  2. Monolithically integrated absolute frequency comb laser system

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  3. Monolithically integrated Ge CMOS laser

    Science.gov (United States)

    Camacho-Aguilera, Rodolfo

    2014-02-01

    Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm2. Improvements in Ge work

  4. Wafer-scale graphene integrated circuit.

    Science.gov (United States)

    Lin, Yu-Ming; Valdes-Garcia, Alberto; Han, Shu-Jen; Farmer, Damon B; Meric, Inanc; Sun, Yanning; Wu, Yanqing; Dimitrakopoulos, Christos; Grill, Alfred; Avouris, Phaedon; Jenkins, Keith A

    2011-06-10

    A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.

  5. Monolithically integrated AlN/GaN electronics for harsh environments Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a...

  6. Monolithic Time Delay Integrated APD Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The overall goal of the proposed program by Epitaxial Technologies is to develop monolithic time delay integrated avalanche photodiode (APD) arrays with sensitivity...

  7. Design of Integrated Circuits Approaching Terahertz Frequencies

    DEFF Research Database (Denmark)

    Yan, Lei

    In this thesis, monolithic microwave integrated circuits(MMICs) are presented for millimeter-wave and submillimeter-wave or terahertz(THz) applications. Millimeter-wave power generation from solid state devices is not only crucial for the emerging high data rate wireless communications but also...

  8. Bioluminescent bioreporter integrated circuit detection methods

    Energy Technology Data Exchange (ETDEWEB)

    Simpson, Michael L.; Paulus, Michael J.; Sayler, Gary S.; Applegate, Bruce M.; Ripp, Steven A.

    2005-06-14

    Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for detection of particular analytes, including ammonia and estrogen compounds.

  9. MOS integrated circuit design

    CERN Document Server

    Wolfendale, E

    2013-01-01

    MOS Integral Circuit Design aims to help in the design of integrated circuits, especially large-scale ones, using MOS Technology through teaching of techniques, practical applications, and examples. The book covers topics such as design equation and process parameters; MOS static and dynamic circuits; logic design techniques, system partitioning, and layout techniques. Also featured are computer aids such as logic simulation and mask layout, as well as examples on simple MOS design. The text is recommended for electrical engineers who would like to know how to use MOS for integral circuit desi

  10. Monolithically integrated optoelectronic down-converter (MIOD)

    Science.gov (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  11. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

  12. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    Science.gov (United States)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-10-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W-1. The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S21) is below 0.4 dB from 0 to 40 GHz and the return loss (S11) is less than -20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S21 shifting caused by the packaging structure is below 0.5 dB, and S11 is less than -10 dB from 8 GHz to 14 GHz.

  13. A monolithic integrated photonic microwave filter

    Science.gov (United States)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2016-12-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  14. Heterogeneous photonic integrated circuits

    Science.gov (United States)

    Fang, Alexander W.; Fish, Gregory; Hall, Eric

    2012-01-01

    Photonic Integrated Circuits (PICs) have been dichotomized into circuits with high passive content (silica and silicon PLCs) and high active content (InP tunable lasers and transceivers) due to the trade-off in material characteristics used within these two classes. This has led to restrictions in the adoption of PICs to systems in which only one of the two classes of circuits are required to be made on a singular chip. Much work has been done to create convergence in these two classes by either engineering the materials to achieve the functionality of both device types on a single platform, or in epitaxial growth techniques to transfer one material to the next, but have yet to demonstrate performance equal to that of components fabricated in their native substrates. Advances in waferbonding techniques have led to a new class of heterogeneously integrated photonic circuits that allow for the concurrent use of active and passive materials within a photonic circuit, realizing components on a transferred substrate that have equivalent performance as their native substrate. In this talk, we review and compare advances made in heterogeneous integration along with demonstrations of components and circuits enabled by this technology.

  15. Test and inspection for process control of monolithic circuits

    Science.gov (United States)

    Spangenberg, E.

    1967-01-01

    Report details the test and inspection procedures for the mass production of high reliability integrated circuits. It covers configuration control, basic fundamentals of quality control, control charts, wafer process evaluation, general process evaluation, evaluation score system, and diffusion evaluation.

  16. Monolithically integrated interferometer for optical displacement measurement

    Science.gov (United States)

    Hofstetter, Daniel; Zappe, Hans P.

    1996-01-01

    We discuss the fabrication of a monolithically integrated optical displacement sensors using III-V semiconductor technology. The device is configured as a Michelson interferometer and consists of a distributed Bragg reflector laser, a photodetector and waveguides forming a directional coupler. Using this interferometer, displacements in the 100 nm range could be measured at distances of up to 45 cm. We present fabrication, device results and characterization of the completed interferometer, problems, limitations and future applications will also be discussed.

  17. Photonic Integrated Circuits

    Science.gov (United States)

    Krainak, Michael; Merritt, Scott

    2016-01-01

    Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

  18. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  19. Wideband monolithically integrated front-end subsystems and components

    Science.gov (United States)

    Mruk, Joseph Rene

    This thesis presents the analysis, design, and measurements of passive, monolithically integrated, wideband recta-coax and printed circuit board front-end components. Monolithic fabrication of antennas, impedance transformers, filters, and transitions lowers manufacturing costs by reducing assembly time and enhances performance by removing connectors and cabling between the devices. Computational design, fabrication, and measurements are used to demonstrate the capabilities of these front-end assemblies. Two-arm wideband planar log-periodic antennas fed using a horizontal feed that allows for filters and impedance transformers to be readily fabricated within the radiating region of the antenna are demonstrated. At microwave frequencies, low-cost printed circuit board processes are typically used to produce planar devices. A 1.8 to 11 GHz two-arm planar log-periodic antenna is designed with a monolithically integrated impedance transformer. Band rejection methods based on modifying the antenna aperture, use of an integrated filter, and the application of both methods are investigated with realized gain suppressions of over 25 dB achieved. The ability of standard circuit board technology to fabricate millimeter-wave devices up to 110 GHz is severely limited. Thin dielectrics are required to prevent the excitation of higher order modes in the microstrip substrate. Fabricating the thin line widths required for the antenna aperture also becomes prohibitively challenging. Surface micro-machining typically used in the fabrication of MEMS devices is capable of producing the extremely small features that can be used to fabricate antennas extending through W-band. A directly RF fed 18 to 110 GHz planar log-periodic antenna is developed. The antenna is fabricated with an integrated impedance transformer and additional transitions for measurement characterization. Singly terminated low-loss wideband millimeter-wave filters operating over V- and W- band are developed. High

  20. Digital integrated circuits

    Science.gov (United States)

    Polasek, P.; Halamik, J.

    1984-05-01

    The term semicustom designed integrated circuits denotes integrated circuits of an all purpose character in which the production of chips is completed by using one to three custom design stencil type exposure masks. This involves in most cases interconnecting masks that are used to devise the circuit function desired by the customer. Silicon plates with an all purpose gate matrix are produced up to the interconnection level and can be kept at this phase in storage, after which a customer's specific demands can be met very expediently. All purpose logic fields containing 200 logic gates on a chip and an all purpose chip to be expanded to 1,000 logic gates are discussed. The technology facilitates the devising of fast gates with a delay of approximately 5 ns and power dissipation of 1 mW. In assembly it will be possible to make use of the entire assortment of the currently used casings with 16, 18, 20, 24, 28 and 40 outlets. In addition to the development of the mentioned technology, a general methodology for design of the mentioned gate fields is currently under way.

  1. Linear integrated circuits

    CERN Document Server

    Carr, Joseph

    1996-01-01

    The linear IC market is large and growing, as is the demand for well trained technicians and engineers who understand how these devices work and how to apply them. Linear Integrated Circuits provides in-depth coverage of the devices and their operation, but not at the expense of practical applications in which linear devices figure prominently. This book is written for a wide readership from FE and first degree students, to hobbyists and professionals.Chapter 1 offers a general introduction that will provide students with the foundations of linear IC technology. From chapter 2 onwa

  2. Nano integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Yung Sup

    2004-02-15

    This book contains nine chapters, which are introduction of manufacture of semiconductor chip, oxidation such as Dry-oxidation, wet oxidation, oxidation model and oxide film, diffusion like diffusion process, diffusion equation, diffusion coefficient and diffusion system, ion implantation, including ion distribution, channeling, multiimplantation and masking and its system, sputtering such as CVD and PVD, lithography, wet etch and dry etch, interconnection and flattening like metal-silicon connection, silicide, multiple layer metal process and flattening, an integrated circuit process, including MOSFET and CMOS.

  3. An integrated circuit floating point accumulator

    Science.gov (United States)

    Goldsmith, T. C.

    1977-01-01

    Goddard Space Flight Center has developed a large scale integrated circuit (type 623) which can perform pulse counting, storage, floating point compression, and serial transmission, using a single monolithic device. Counts of 27 or 19 bits can be converted to transmitted values of 12 or 8 bits respectively. Use of the 623 has resulted in substantial savaings in weight, volume, and dollar resources on at least 11 scientific instruments to be flown on 4 NASA spacecraft. The design, construction, and application of the 623 are described.

  4. Bioluminescent bioreporter integrated circuit devices and methods for detecting ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Simpson, Michael L [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Sayler, Gary S [Blaine, TN; Applegate, Bruce M [West Lafayette, IN; Ripp, Steven A [Knoxville, TN

    2007-04-24

    Monolithic bioelectronic devices for the detection of ammonia includes a microorganism that metabolizes ammonia and which harbors a lux gene fused with a heterologous promoter gene stably incorporated into the chromosome of the microorganism and an Optical Application Specific Integrated Circuit (OASIC). The microorganism is generally a bacterium.

  5. Electromagnetic Field Behavior in Dispersive Isotropic Negative Phase Velocity/Negative Refractive Index Guided Wave Structures Compatible with Millimeter-Wave Monolithic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Clifford M. Krowne

    2007-01-01

    Full Text Available A microstrip configuration has been loaded with a dispersive isotropic left-handed medium (LHM substrate and studied regarding its high frequency millimeter-wave behavior near 100 GHz. This has been accomplished using a full-wave integral-equation anisotropic Green's function code configured to run for isotropy. Never before seen electromagnetic field distributions are produced, unlike anything found in normal media devices, using this ab initio solver. These distributions are made in the cross-sectional dimension, with the field propagating in the perpendicular direction. It is discovered that the LHM distributions are so radically different from ordinary media used as a substrate that completely new electronic devices based upon the new physics become a real possibility. The distinctive dispersion diagram for the dispersive medium, consisting of unit cells with split ring resonator-rod combinations, is provided over the upper millimeter-wave frequency regime.

  6. Diamond Integrated Optomechanical Circuits

    CERN Document Server

    Rath, Patrik; Nebel, Christoph; Wild, Christoph; Pernice, Wolfram H P

    2013-01-01

    Diamond offers unique material advantages for the realization of micro- and nanomechanical resonators due to its high Young's modulus, compatibility with harsh environments and superior thermal properties. At the same time, the wide electronic bandgap of 5.45eV makes diamond a suitable material for integrated optics because of broadband transparency and the absence of free-carrier absorption commonly encountered in silicon photonics. Here we take advantage of both to engineer full-scale optomechanical circuits in diamond thin films. We show that polycrystalline diamond films fabricated by chemical vapour deposition provide a convenient waferscale substrate for the realization of high quality nanophotonic devices. Using free-standing nanomechanical resonators embedded in on-chip Mach-Zehnder interferometers, we demonstrate efficient optomechanical transduction via gradient optical forces. Fabricated diamond resonators reproducibly show high mechanical quality factors up to 11,200. Our low cost, wideband, carri...

  7. A monolithic integrated micro direct methanol fuel cell based on sulfo functionalized porous silicon

    Science.gov (United States)

    Wang, M.; Lu, Y. X.; Liu, L. T.; Wang, X. H.

    2016-11-01

    In this paper, we demonstrate a monolithic integrated micro direct methanol fuel cell (μDMFC) for the first time. The monolithic integrated μDMFC combines proton exchange membrane (PEM) and Pt nanocatalysts, in which PEM is achieved by the functionalized porous silicon membrane and 3D Pt nanoflowers being synthesized in situ on it as catalysts. Sulfo groups functionalized porous silicon membrane serves as a PEM and a catalyst support simultaneously. The μDMFC prototype achieves an open circuit voltage of 0.3 V, a maximum power density of 5.5 mW/cm2. The monolithic integrated μDMFC offers several desirable features such as compatibility with micro fabrication techniques, an undeformable solid PEM and the convenience of assembly.

  8. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

    Science.gov (United States)

    Agazzi, Laura; Bradley, Jonathan D B; Dijkstra, Meindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus

    2010-12-20

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

  9. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

    Directory of Open Access Journals (Sweden)

    Matija Podhraški

    2016-03-01

    Full Text Available An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

  10. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem.

    Science.gov (United States)

    Podhraški, Matija; Trontelj, Janez

    2016-03-17

    An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

  11. A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

    Science.gov (United States)

    Podhraški, Matija; Trontelj, Janez

    2016-01-01

    An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm. PMID:26999146

  12. Secure integrated circuits and systems

    CERN Document Server

    Verbauwhede, Ingrid MR

    2010-01-01

    On any advanced integrated circuit or 'system-on-chip' there is a need for security. In many applications the actual implementation has become the weakest link in security rather than the algorithms or protocols. The purpose of the book is to give the integrated circuits and systems designer an insight into the basics of security and cryptography from the implementation point of view. As a designer of integrated circuits and systems it is important to know both the state-of-the-art attacks as well as the countermeasures. Optimizing for security is different from optimizations for speed, area,

  13. Superconducting single photon detectors integrated with diamond nanophotonic circuits

    CERN Document Server

    Rath, Patrik; Ferrari, Simone; Sproll, Fabian; Lewes-Malandrakis, Georgia; Brink, Dietmar; Ilin, Konstantin; Siegel, Michael; Nebel, Christoph; Pernice, Wolfram

    2015-01-01

    Photonic quantum technologies promise to repeat the success of integrated nanophotonic circuits in non-classical applications. Using linear optical elements, quantum optical computations can be performed with integrated optical circuits and thus allow for overcoming existing limitations in terms of scalability. Besides passive optical devices for realizing photonic quantum gates, active elements such as single photon sources and single photon detectors are essential ingredients for future optical quantum circuits. Material systems which allow for the monolithic integration of all components are particularly attractive, including III-V semiconductors, silicon and also diamond. Here we demonstrate nanophotonic integrated circuits made from high quality polycrystalline diamond thin films in combination with on-chip single photon detectors. Using superconducting nanowires coupled evanescently to travelling waves we achieve high detection efficiencies up to 66 % combined with low dark count rates and timing resolu...

  14. CADAT integrated circuit mask analysis

    Science.gov (United States)

    1981-01-01

    CADAT System Mask Analysis Program (MAPS2) is automated software tool for analyzing integrated-circuit mask design. Included in MAPS2 functions are artwork verification, device identification, nodal analysis, capacitance calculation, and logic equation generation.

  15. Integrated circuit cooled turbine blade

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Pang; Jiang, Nan; Um, Jae Y.; Holloman, Harry; Koester, Steven

    2017-08-29

    A turbine rotor blade includes at least two integrated cooling circuits that are formed within the blade that include a leading edge circuit having a first cavity and a second cavity and a trailing edge circuit that includes at least a third cavity located aft of the second cavity. The trailing edge circuit flows aft with at least two substantially 180-degree turns at the tip end and the root end of the blade providing at least a penultimate cavity and a last cavity. The last cavity is located along a trailing edge of the blade. A tip axial cooling channel connects to the first cavity of the leading edge circuit and the penultimate cavity of the trailing edge circuit. At least one crossover hole connects the penultimate cavity to the last cavity substantially near the tip end of the blade.

  16. Variational integrators for electric circuits

    Energy Technology Data Exchange (ETDEWEB)

    Ober-Blöbaum, Sina, E-mail: sinaob@math.upb.de [Computational Dynamics and Optimal Control, University of Paderborn (Germany); Tao, Molei [Courant Institute of Mathematical Sciences, New York University (United States); Cheng, Mulin [Applied and Computational Mathematics, California Institute of Technology (United States); Owhadi, Houman; Marsden, Jerrold E. [Control and Dynamical Systems, California Institute of Technology (United States); Applied and Computational Mathematics, California Institute of Technology (United States)

    2013-06-01

    In this contribution, we develop a variational integrator for the simulation of (stochastic and multiscale) electric circuits. When considering the dynamics of an electric circuit, one is faced with three special situations: 1. The system involves external (control) forcing through external (controlled) voltage sources and resistors. 2. The system is constrained via the Kirchhoff current (KCL) and voltage laws (KVL). 3. The Lagrangian is degenerate. Based on a geometric setting, an appropriate variational formulation is presented to model the circuit from which the equations of motion are derived. A time-discrete variational formulation provides an iteration scheme for the simulation of the electric circuit. Dependent on the discretization, the intrinsic degeneracy of the system can be canceled for the discrete variational scheme. In this way, a variational integrator is constructed that gains several advantages compared to standard integration tools for circuits; in particular, a comparison to BDF methods (which are usually the method of choice for the simulation of electric circuits) shows that even for simple LCR circuits, a better energy behavior and frequency spectrum preservation can be observed using the developed variational integrator.

  17. Design of Monolithic Integrator for Strain-to-Frequency Converter

    Directory of Open Access Journals (Sweden)

    Tuan Mohd. Khairi Tuan Mat

    2012-01-01

    Full Text Available Strain-to-Frequency converter (SFC is a one of the analog conditioner tools that converts any strain signal to the frequency signal. The basic concept of SFC is by detecting any changing of strains, then converting the strain to the voltage signal and converting the voltage signal to the frequency signal. This tool consists of 3 main  components which are strain gauge, differential integrator and comparator. This paper presents the designing and analysis of monolithic integrator that to be used in the Strain-toFrequency converter. The primary goal is to design and simulate the performance of monolithic integrator for SFC using GATEWAY Silvaco Electronic Design Automation (S EDA tools and EXPERT software. The performances of SFC using the designed monolithic integrator are also investigated.

  18. A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

    Science.gov (United States)

    Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

    2017-07-01

    We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

  19. A Monolithically Integrated 12V/5V Switch-Capacitor DC-DC Converter

    Institute of Scientific and Technical Information of China (English)

    耿莉; 陈治明; 刘先锋

    2000-01-01

    A monolithically integrated 12V/SV switch capacitor DC-DC converter with structure-simplified main circuit and control circuit is presented. Its topological circuit and basic operating principle are discussed in detail. It is shown that elevated operating frequency, increased capacitance and reduced turn-on voltage of the diodes can make the converter's output characteristics improved. Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher. As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial-parallel capacitance is optimized for the maximum output power. The device selection and its fabrication method are presented. A feasible integration process and its corresponding layout are designed. All active devices including switching transistors and diodes are integrated together with all passive cells including capacitors and resistor on a single chip based on BiMOS process,as has been verified to be correct and practical by simulation and chip test.

  20. Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

    Directory of Open Access Journals (Sweden)

    S.A. Legotin

    2014-07-01

    Full Text Available This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of α-particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered.

  1. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow.

    Science.gov (United States)

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-12-15

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system.

  2. Monolithic circuit development for RHIC at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Alley, G.T.; Britton, C.L. Jr.; Kennedy, E.J.; Newport, D.F.; Wintenberg, A.L.; Young, G.R. [Oak Ridge National Laboratory, TN (United States)

    1991-12-31

    The work performed for RHIC at Oak Ridge National Laboratory during FY 91 is presented in this paper. The work includes preamplifier, analog memory, and analog-digital converter development for Dimuon Pad Readout, and evaluation and development of preamplifier-shapers for silicon strip readout. The approaches for implementation are considered as well as measured data for the various circuits that have been developed.

  3. Monolithic circuit development for RHIC at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Alley, G.T.; Britton, C.L. Jr.; Kennedy, E.J.; Newport, D.F.; Wintenberg, A.L.; Young, G.R. [Oak Ridge National Laboratory, TN (United States)

    1991-12-31

    The work performed for RHIC at Oak Ridge National Laboratory during FY 91 is presented in this paper. The work includes preamplifier, analog memory, and analog-digital converter development for Dimuon Pad Readout, and evaluation and development of preamplifier-shapers for silicon strip readout. The approaches for implementation are considered as well as measured data for the various circuits that have been developed.

  4. Vertically Integrated Circuits at Fermilab

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, Grzegorz; Demarteau, Marcel; Hoff, James; Lipton, Ronald; Shenai, Alpana; Trimpl, Marcel; Yarema, Raymond; Zimmerman, Tom; /Fermilab

    2009-01-01

    The exploration of the vertically integrated circuits, also commonly known as 3D-IC technology, for applications in radiation detection started at Fermilab in 2006. This paper examines the opportunities that vertical integration offers by looking at various 3D designs that have been completed by Fermilab. The emphasis is on opportunities that are presented by through silicon vias (TSV), wafer and circuit thinning and finally fusion bonding techniques to replace conventional bump bonding. Early work by Fermilab has led to an international consortium for the development of 3D-IC circuits for High Energy Physics. The consortium has submitted over 25 different designs for the Fermilab organized MPW run organized for the first time.

  5. Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics

    Science.gov (United States)

    Wood, Thomas H.

    1988-05-01

    Semiconductor MQWs represent a new technology for opto-electronics. These MQWs have an electroabsorption effect approximately 50 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  6. Research and Design of Monolithic Decision Circuit for Optical Communication System①②

    Institute of Scientific and Technical Information of China (English)

    ZHANGYaqi; ZHAOJie

    1997-01-01

    In this paper,the cause of bit-error is analyzed when data are decided in the optical receiver.A monolithic D-ff decision circuit is designed.It can work effectively at 622 Mb/s.Moreover,a decision method of parallel processing to improve thd decision speed is presented,through which the parallel circuit can work up to 1 Gb/s using the same model.With the technique,higher-speed data can be decided by using lower speed device.

  7. Integrated circuits for multimedia applications

    DEFF Research Database (Denmark)

    Vandi, Luca

    2007-01-01

    This work presents several key aspects in the design of RF integrated circuits for portable multimedia devices. One chapter is dedicated to the application of negative-feedback topologies to receiver frontends. A novel feedback technique suitable for common multiplier-based mixers is described......, and it is applied to a broad-band dual-loop receiver architecture in order to boost the linearity performances of the stage. A simplified noise- and linearity analysis of the circuit is derived, and a comparison is provided with a more traditional dual-loop topology (a broad-band stage based on shunt...

  8. Delay locked loop integrated circuit.

    Energy Technology Data Exchange (ETDEWEB)

    Brocato, Robert Wesley

    2007-10-01

    This report gives a description of the development of a Delay Locked Loop (DLL) integrated circuit (IC). The DLL was developed and tested as a stand-alone IC test chip to be integrated into a larger application specific integrated circuit (ASIC), the Quadrature Digital Waveform Synthesizer (QDWS). The purpose of the DLL is to provide a digitally programmable delay to enable synchronization between an internal system clock and external peripherals with unknown clock skew. The DLL was designed and fabricated in the IBM 8RF process, a 0.13 {micro}m CMOS process. It was designed to operate with a 300MHz clock and has been tested up to 500MHz.

  9. Analog and VLSI circuits

    CERN Document Server

    Chen, Wai-Kai

    2009-01-01

    Featuring hundreds of illustrations and references, this book provides the information on analog and VLSI circuits. It focuses on analog integrated circuits, presenting the knowledge on monolithic device models, analog circuit cells, high performance analog circuits, RF communication circuits, and PLL circuits.

  10. Monolithically Integrated Ge-on-Si Active Photonics

    OpenAIRE

    Jifeng Liu

    2014-01-01

    Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In this paper, we present a review of the recent progress in Ge-on...

  11. Indium phosphide based photonic integrated circuits

    Science.gov (United States)

    Mason, Thomas Gordon Beck

    The continued advancement of growth and processing technology in compound semiconductor materials has opened up new possibilities for the creation of complex photonic devices and circuits. This dissertation discusses the design and development of a photonic circuit based on the monolithic integration of a widely tunable laser with an on chip wavelength monitor. The widely tunable laser is a four-section device with a pair of sampled grating distributed Bragg reflector mirrors. This enables it to use a Vernier effect tuning mechanism to overcome the Deltan/n characteristic which limits the wavelength range of conventional injection tuned semiconductor lasers. Index tuning in the laser is improved by using a thick low band gap waveguide with an optimized grating etch and regrowth technique. A record 22 nm quasi-continuous tuning range has been demonstrated for a ridge waveguide device. For even greater tuning range, a buried heterostructure device was developed that is capable of tuning over more than 47 nm, enabling it to cover almost 60 DWDM wavelength channels. The complexity of the tuning mechanism in these devices makes it desirable to have a wavelength monitor to provide feedback for control of the laser. In this work, we have developed a compact integrated wavelength monitor that can be fabricated on chip with the tunable sampled grating DBR laser. The wavelength monitor takes advantage of two-mode interference in a semiconductor waveguide to create a wavelength dependent splitter. Monitors based on this principle have been successfully integrated with both ridge waveguide and buried heterostructure sampled grating DBR lasers. This dissertation reviews all of the aspects of the design, growth, processing and packaging of these devices.

  12. Co-design of on-chip antennas and circuits for a UNII band monolithic transceiver

    KAUST Repository

    Shamim, Atif

    2012-07-28

    The surge of highly integrated and multifunction wireless devices has necessitated the designers to think outside the box for solutions that are unconventional. The new trends have provided the impetus for low cost and compact RF System-on-Chip (SoC) approaches [1]. The major advantages of SoC are miniaturization and cost reduction. A major bottleneck to the true realization of monolithic RF SoC transceivers is the implementation of on-chip antennas with circuitry. Though complete integrated transceivers with on-chip antennas have been demonstrated, these designs are generally for high frequencies. Moreover, they either use non-standard CMOS processes or additional fabrication steps to enhance the antenna efficiency, which in turn adds to the cost of the system [2-3]. Another challenge related to the on-chip antennas is the characterization of their radiation properties. Most of the recently reported work (summarized in Table I) shows that very few on-chip antennas are characterized. Our previous work [4], demonstrated a Phase Lock Loop (PLL) based transmitter (TX) with an on-chip antenna. However, the radiation from the on-chip antenna experienced strong interference due to 1) some active circuitry on one side of the chip and 2) the PCB used to mount the chip in the anechoic chamber. This paper presents, for the first time, a complete 5.2 GHz (UNII band) transceiver with separate TX and receiver (RX) antennas. To the author\\'s best knowledge, its size of 3 mm2 is the smallest reported for a UNII band transceiver with two on-chip antennas. Both antennas are characterized for their radiation properties through an on-wafer custom measurement setup. The strategy to co-design on-chip antennas with circuits, resultant trade-offs and measurement challenges have also been discussed. © 2010 IEEE.

  13. Neuromorphic opto-electronic integrated circuits for optical signal processing

    Science.gov (United States)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  14. Radio frequency integrated circuit design

    CERN Document Server

    Rogers, John W M

    2010-01-01

    This newly revised and expanded edition of the 2003 Artech House classic, Radio Frequency Integrated Circuit Design, serves as an up-to-date, practical reference for complete RFIC know-how. The second edition includes numerous updates, including greater coverage of CMOS PA design, RFIC design with on-chip components, and more worked examples with simulation results. By emphasizing working designs, this book practically transports you into the authors' own RFIC lab so you can fully understand the function of each design detailed in this book. Among the RFIC designs examined are RF integrated LC

  15. Affinity Monolith-Integrated Microchips for Protein Purification and Concentration.

    Science.gov (United States)

    Gao, Changlu; Sun, Xiuhua; Wang, Huaixin; Qiao, Wei; Hu, Bo

    2016-01-01

    Affinity chromatography is a valuable method to purify and concentrate minute amount of proteins. Monoliths with epoxy groups for affinity immobilization were prepared by direct in-situ photopolymerization of glycidyl methacrylate and ethylene glycol dimethacrylate in porogenic solvents consisting of 1-dodecanol and cyclohexanol. By integrating affinity monoliths onto a microfluidic system, targeted biomolecules can be captured and retained on affinity column, while other biomolecules having no specific interactions toward the immobilized ligands flow through the microchannel. Therefore, proteins which remain on the affinity column are purified and concentrated, and then eluted by appropriate solutions and finally, separated by microchip capillary electrophoresis. This integrated microfluidic device has been applied to the purification and separation of specific proteins (FITC-labeled human serum albumin and IgG) in a mixture.

  16. Physical and chemical sensing using monolithic semiconductor optical transducers

    Science.gov (United States)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  17. Monolithic integrated optic fiber Bragg grating sensor interrogator

    Science.gov (United States)

    Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Songjian

    2010-04-01

    Fiber Bragg gratings (FBGs) are a mature sensing technology that has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. Fiber Bragg grating sensors can be use for a variety of measurements including strain, stress, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion distributed at multiple locations within the structure using a single fiber element. The most prominent advantages of FBGs are: small size and light weight, multiple FBG transducers on a single fiber, and immunity to radio frequency interference. A major disadvantage of FBG technology is that conventional state-of-the-art fiber Bragg grating interrogation systems are typically bulky, heavy, and costly bench top instruments that are assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the need for a compact FBG interrogation system, this paper describes recent progress towards the development of a miniature fiber Bragg grating sensor interrogator (FBG-TransceiverTM) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables the monolithic integration of all of the functionalities, both passive and active, of conventional bench top FBG sensor interrogators systems, packaged in a miniaturized, low power operation, 2-cm x 5-cm small form factor (SFF) package suitable for the long-term structural health monitoring in applications where size, weight, and power are critical for operation.

  18. Graphene radio frequency receiver integrated circuit.

    Science.gov (United States)

    Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A; Haensch, Wilfried

    2014-01-01

    Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

  19. Long-wavelength silicon photonic integrated circuits

    OpenAIRE

    2014-01-01

    In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 mu m wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 mu m wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors op...

  20. Monolithically integrated heterodyne optical phase-lock loop with RF XOR phase detector.

    Science.gov (United States)

    Steed, Robert J; Pozzi, Francesca; Fice, Martyn J; Renaud, Cyril C; Rogers, David C; Lealman, Ian F; Moodie, David G; Cannard, Paul J; Lynch, Colm; Johnston, Lilianne; Robertson, Michael J; Cronin, Richard; Pavlovic, Leon; Naglic, Luka; Vidmar, Matjaz; Seeds, Alwyn J

    2011-10-10

    We present results for an heterodyne optical phase-lock loop (OPLL), monolithically integrated on InP with external phase detector and loop filter, which phase locks the integrated laser to an external source, for offset frequencies tuneable between 0.6 GHz and 6.1 GHz. The integrated semiconductor laser emits at 1553 nm with 1.1 MHz linewidth, while the external laser has a linewidth less than 150 kHz. To achieve high quality phase locking with lasers of these linewidths, the loop delay has been made less than 1.8 ns. Monolithic integration reduces the optical path delay between the laser and photodiode to less than 20 ps. The electronic part of the OPLL was implemented using a custom-designed feedback circuit with a propagation delay of ~1 ns and an open-loop bandwidth greater than 1 GHz. The heterodyne signal between the locked slave laser and master laser has phase noise below -90 dBc/Hz for frequency offsets greater than 20 kHz and a phase error variance in 10 GHz bandwidth of 0.04 rad2.

  1. A monolithically integrated torsional CMOS-MEMS relay

    Science.gov (United States)

    Riverola, M.; Sobreviela, G.; Torres, F.; Uranga, A.; Barniol, N.

    2016-11-01

    We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the k Ω -range throughout the on-off cycling test.

  2. Scaling of graphene integrated circuits

    Science.gov (United States)

    Bianchi, Massimiliano; Guerriero, Erica; Fiocco, Marco; Alberti, Ruggero; Polloni, Laura; Behnam, Ashkan; Carrion, Enrique A.; Pop, Eric; Sordan, Roman

    2015-04-01

    The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 μm gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 μm gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing. Electronic supplementary information (ESI) available: Discussions on the cutoff frequency fT, the maximum frequency of oscillation fmax, and the intrinsic gate delay CV/I. See DOI: 10.1039/c5nr01126d

  3. Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform

    Science.gov (United States)

    Liu, Jifeng; Pan, Dong; Jongthammanurak, Samerkhae; Wada, Kazumi; Kimerling, Lionel C.; Michel, Jurgen

    2007-01-01

    We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electroabsorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO2(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.

  4. Direct optical injection locking of monolithically integrated In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As MODFET oscillators

    Science.gov (United States)

    Yang, D.; Bhattacharya, P. K.; Brock, T.

    1993-05-01

    The authors have fabricated monolithically integrated In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As 0.25-micron gate MODFET oscillators. The results of direct optical subharmonic injection locking of these oscillator circuits at 10.159 and 19.033 GHz are presented.

  5. Monolithically integrated Helmholtz coils by 3-dimensional printing

    Energy Technology Data Exchange (ETDEWEB)

    Li, Longguang [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Abedini-Nassab, Roozbeh; Yellen, Benjamin B., E-mail: yellen@duke.edu [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Department of Mechanical Engineering and Materials Science, Duke University, P.O. Box 90300, Hudson Hall, Durham, North Carolina 27708 (United States)

    2014-06-23

    3D printing technology is of great interest for the monolithic fabrication of integrated systems; however, it is a challenge to introduce metallic components into 3D printed molds to enable broader device functionality. Here, we develop a technique for constructing a multi-axial Helmholtz coil by injecting a eutectic liquid metal Gallium Indium alloy (EGaIn) into helically shaped orthogonal cavities constructed in a 3D printed block. The tri-axial solenoids each carry up to 3.6 A of electrical current and produce magnetic field up to 70 G. Within the central section of the coil, the field variation is less than 1% and is in agreement with theory. The flow rates and critical pressures required to fill the 3D cavities with liquid metal also agree with theoretical predictions and provide scaling trends for filling the 3D printed parts. These monolithically integrated solenoids may find future applications in electronic cell culture platforms, atomic traps, and miniaturized chemical analysis systems based on nuclear magnetic resonance.

  6. Monolithic integration of a quantum emitter with a compact on-chip beam-splitter

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Coles, R. J.; O' Hara, J.; Royall, B.; Fox, A. M.; Skolnick, M. S. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Clarke, E. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-06-09

    A fundamental component of an integrated quantum optical circuit is an on-chip beam-splitter operating at the single-photon level. Here, we demonstrate the monolithic integration of an on-demand quantum emitter in the form of a single self-assembled InGaAs quantum dot (QD) with a compact (>10 μm), air clad, free standing directional coupler acting as a beam-splitter for anti-bunched light. The device was tested by using single photons emitted by a QD embedded in one of the input arms of the device. We verified the single-photon nature of the QD signal by performing Hanbury Brown-Twiss measurements and demonstrated single-photon beam splitting by cross-correlating the signal from the separate output ports of the directional coupler.

  7. Active components for integrated plasmonic circuits

    DEFF Research Database (Denmark)

    Krasavin, A.V.; Bolger, P.M.; Zayats, A.V.;

    2009-01-01

    We present a comprehensive study of highly efficient and compact passive and active components for integrated plasmonic circuit based on dielectric-loaded surface plasmon polariton waveguides.......We present a comprehensive study of highly efficient and compact passive and active components for integrated plasmonic circuit based on dielectric-loaded surface plasmon polariton waveguides....

  8. Microcontroller based Integrated Circuit Tester

    Directory of Open Access Journals (Sweden)

    Yousif Taha Yousif Elamin

    2015-02-01

    Full Text Available The digital integrated circuit (IC tester is implemented by using the ATmega32 microcontroller . The microcontroller processes the inputs and outputs and displays the results on a Liquid Crystal Display (LCD. The basic function of the digital IC tester is to test a digital IC for correct logical functioning as described in the truth table and/or function table. The designed model can test digital ICs having 14 pins. Since it is programmable, any number of ICs can be tested . This model applies the necessary signals to the inputs of the IC, monitoring the outputs at each stage and comparing them with the outputs in the truth table. Any discrepancy in the functioning of the IC results in a fail indication, displays the faulty and good gates on the LCD. The testing procedure is accomplished with the help of keypad keys present on the main board design. The test has been accomplished with most commonly used digital IC's, mainly belonging to the 74 series. Digital IC tester tests three samples of IC's ( NAND, NOT, NOR. The design is flexible . We can add extra IC bases and subroutines to test any other IC in the 74 series.

  9. Cantilever RF-MEMS for monolithic integration with phased array antennas on a PCB

    Science.gov (United States)

    Aguilar-Armenta, C. J.; Porter, S. J.

    2015-12-01

    This article presents the development and operation of a novel electrostatic metal-to-metal contact cantilever radio-frequency microelectromechanical system (RF-MEMS) switch for monolithic integration with microstrip phased array antennas (PAAs) on a printed circuit board. The switch is fabricated using simple photolithography techniques on a Rogers 4003c substrate, with a footprint of 200 µm × 100 µm, based on a 1 µm-thick copper cantilever. An alternative wet-etching technique for effectively releasing the cantilever is described. Electrostatic and electromagnetic measurements show that the RF-MEMS presents an actuation voltage of 90 V for metal-to-metal contact, an isolation of -8.7 dB, insertion loss of -2.5 dB and a return loss of -15 dB on a 50 Ω microstrip line at 12.5 GHz. For proof-of-concept, a beam-steering 2 × 2 microstrip PAA, based on two 1-bit phase shifters suitable for the monolithic integration of the RF-MEMS, has been designed and measured at 12.5 GHz. Measurements show that the beam-steering system presents effective radiation characteristics with scanning capabilities from broadside towards 29° in the H-plane.

  10. An implantable neural probe with monolithically integrated dielectric waveguide and recording electrodes for optogenetics applications

    Science.gov (United States)

    Wu, Fan; Stark, Eran; Im, Maesoon; Cho, Il-Joo; Yoon, Eui-Sung; Buzsáki, György; Wise, Kensall D.; Yoon, Euisik

    2013-10-01

    Objective. Optogenetics promises exciting neuroscience research by offering optical stimulation of neurons with unprecedented temporal resolution, cell-type specificity and the ability to excite as well as to silence neurons. This work provides the technical solution to deliver light to local neurons and record neural potentials, facilitating local circuit analysis and bridging the gap between optogenetics and neurophysiology research. Approach. We have designed and obtained the first in vivo validation of a neural probe with monolithically integrated electrodes and waveguide. High spatial precision enables optical excitation of targeted neurons with minimal power and recording of single-units in dense cortical and subcortical regions. Main results. The total coupling and transmission loss through the dielectric waveguide at 473 nm was 10.5 ± 1.9 dB, corresponding to an average output intensity of 9400 mW mm-2 when coupled to a 7 mW optical fiber. Spontaneous field potentials and spiking activities of multiple Channelrhodopsin-2 expressing neurons were recorded in the hippocampus CA1 region of an anesthetized rat. Blue light stimulation at intensity of 51 mW mm-2 induced robust spiking activities in the physiologically identified local populations. Significance. This minimally invasive, complete monolithic integration provides unmatched spatial precision and scalability for future optogenetics studies at deep brain regions with high neuronal density.

  11. Design of a co-integrated CMOS/NEMS oscillator with a simple electronic circuit

    OpenAIRE

    Arndt, Grégory; Colinet, Eric; Juillard, Jérôme

    2010-01-01

    This paper presents the theoretical study of a monolithically integrated NEMS/CMOS oscillator with electrostatic actuation and piezoresistive detection. A feedback circuit based on a single active transistor is implemented. The proposed architecture is so compact that it can be implemented with ease in a sensor array application for example. A brief description of the NEMS resonator is given and the conditions for oscillation build-up are stated. We show how the co-integration allows the use ...

  12. Mixed signal custom integrated circuit development for physics instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Britton, C.L. Jr.; Bryan, W.L.; Emery, M.S. [and others

    1998-10-01

    The Monolithic Systems Development Group at the Oak Ridge National Laboratory has been greatly involved in custom mixed-mode integrated circuit development for the PHENIX detector at the Relativistic Heavy Ion collider (RHIC) at Brookhaven National Laboratory and position-sensitive germanium spectrometer front-ends for the Naval Research Laboratory (NRL). This paper will outline the work done for both PHENIX and the Naval Research Laboratory in the area of full-custom, mixed-signal CMOS integrated electronics. This paper presents the architectures chosen for the various PHENIX detectors which include position-sensitive silicon, capacitive pixel, and phototube detectors, and performance results for the subsystems as well as a system description of the NRL germanium strip system and its performance. The performance of the custom preamplifiers, discriminators, analog memories, analog-digital converters, and control circuitry for all systems will be presented.

  13. Analog VLSI neural network integrated circuits

    Science.gov (United States)

    Kub, F. J.; Moon, K. K.; Just, E. A.

    1991-01-01

    Two analog very large scale integration (VLSI) vector matrix multiplier integrated circuit chips were designed, fabricated, and partially tested. They can perform both vector-matrix and matrix-matrix multiplication operations at high speeds. The 32 by 32 vector-matrix multiplier chip and the 128 by 64 vector-matrix multiplier chip were designed to perform 300 million and 3 billion multiplications per second, respectively. An additional circuit that has been developed is a continuous-time adaptive learning circuit. The performance achieved thus far for this circuit is an adaptivity of 28 dB at 300 KHz and 11 dB at 15 MHz. This circuit has demonstrated greater than two orders of magnitude higher frequency of operation than any previous adaptive learning circuit.

  14. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  15. Synthesis of monolithic graphene – graphite integrated electronics

    Science.gov (United States)

    Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M.

    2013-01-01

    Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems1 with functions defined by synthesis2-6. Graphene7-12 has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication13-20. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically-integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous catalyst metals permits the selective growth of graphene and graphite, with controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from synthesis. These functional, all-carbon structures were transferrable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing, and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent a substantial progress towards encoding electronic functionality via chemical synthesis and suggest future promise for one-step integration of graphene-graphite based electronics. PMID:22101813

  16. Synthesis of monolithic graphene-graphite integrated electronics.

    Science.gov (United States)

    Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M

    2011-11-20

    Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems with functions defined by synthesis. Graphene has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous metal catalysts permits the selective growth of graphene and graphite, with a controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from the synthesis. These functional, all-carbon structures were transferable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent substantial progress towards encoding electronic functionality through chemical synthesis and suggest the future promise of one-step integration of graphene-graphite based electronics.

  17. Analysis of monolithic integrated master oscillator power amplifiers

    Science.gov (United States)

    Mehuys, David; Welch, David F.; Waarts, Robert G.; Parke, Ross; Hardy, Amos; Streifer, William

    1991-07-01

    An analysis of a novel, monolithic integrated master oscillator power amplifier (M-MOPA) is presented. The M-MOPA consists of a DBR master oscillator which injects power into a linear chain of amplifiers and detuned second-order grating output couplers. The analysis self-consistently includes amplified spontaneous emission buildup and residual reflections throughout the amplifier stages. It predicts that output powers in excess of 1 W can be expected from a single-lateral-mode waveguide multistage amplifier less than 1 cm in length, injected with less than 15 mW of input power. In addition to the signal gain of more than 25 dB, the signal-to-noise ratio at 1-W output exceeds 15 dB. Because of the small reflections associated with the grating output couplers, and gain saturation by the injected signal, the amplifier self-oscillation threshold is suppressed to current densities above 15 kA/sq cm.

  18. Towards monolithic integration of germanium light sources on silicon chips

    Science.gov (United States)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  19. Silicon integrated circuits part A : supplement 2

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

  20. Semiconductors integrated circuit design for manufacturability

    CERN Document Server

    Balasinki, Artur

    2011-01-01

    Because of the continuous evolution of integrated circuit manufacturing (ICM) and design for manufacturability (DfM), most books on the subject are obsolete before they even go to press. That's why the field requires a reference that takes the focus off of numbers and concentrates more on larger economic concepts than on technical details. Semiconductors: Integrated Circuit Design for Manufacturability covers the gradual evolution of integrated circuit design (ICD) as a basis to propose strategies for improving return-on-investment (ROI) for ICD in manufacturing. Where most books put the spotl

  1. 0.15-micron Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication

    Science.gov (United States)

    2012-09-01

    arsenide GaN gallium nitride LNA low-noise amplifier MMIC monolithic microwave integrated circuit PA power amplifier HEMT high electron mobility...0.15-µm Gallium Nitride ( GaN ) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication by John Penn ARL...MD 20783-1197 ARL-TN-0496 September 2012 0.15-µm Gallium Nitride ( GaN ) Microwave Integrated Circuit Designs Submitted to TriQuint

  2. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  3. Radio-frequency integrated-circuit engineering

    CERN Document Server

    Nguyen, Cam

    2015-01-01

    Radio-Frequency Integrated-Circuit Engineering addresses the theory, analysis and design of passive and active RFIC's using Si-based CMOS and Bi-CMOS technologies, and other non-silicon based technologies. The materials covered are self-contained and presented in such detail that allows readers with only undergraduate electrical engineering knowledge in EM, RF, and circuits to understand and design RFICs. Organized into sixteen chapters, blending analog and microwave engineering, Radio-Frequency Integrated-Circuit Engineering emphasizes the microwave engineering approach for RFICs. Provide

  4. Integrated Circuit Stellar Magnitude Simulator

    Science.gov (United States)

    Blackburn, James A.

    1978-01-01

    Describes an electronic circuit which can be used to demonstrate the stellar magnitude scale. Six rectangular light-emitting diodes with independently adjustable duty cycles represent stars of magnitudes 1 through 6. Experimentally verifies the logarithmic response of the eye. (Author/GA)

  5. Handbook of microwave integrated circuits

    Science.gov (United States)

    Hoffmann, Reinmut K.

    The design and operation of ICs for use in the 0.5-20-GHz range are described in an introductory and reference work for industrial engineers. Chapters are devoted to an overview of microwave IC (MIC) technology, general stripline characteristics, microwave transmission line (MTL) parameters for microstrips with isotropic dielectric substrates, higher-order modes on a microstrip, the effects of metallic enclosure on MTL transmission parameters, losses in microstrips, the measurement of MTL parameters, and MTLs on anisotropic dielectric substrates. Consideration is given to coupled microstrips on dielectric substrates, microstrip discontinuities, radiation from microstrip circuits, MTL variations, coplanar MTLs, slotlines, and spurious modes in MTL circuits. Diagrams, drawings, graphs, and a glossary of symbols are provided.

  6. Experimental Device for Learning of Logical Circuit Design using Integrated Circuits

    OpenAIRE

    石橋, 孝昭

    2012-01-01

    This paper presents an experimental device for learning of logical circuit design using integrated circuits and breadboards. The experimental device can be made at a low cost and can be used for many subjects such as logical circuits, computer engineering, basic electricity, electrical circuits and electronic circuits. The proposed device is effective to learn the logical circuits than the usual lecture.

  7. Progress in organic integrated circuit manufacture

    Science.gov (United States)

    Taylor, D. Martin

    2016-02-01

    This review article focuses on the development of processes for the manufacture of organic electronic circuits. Beginning with the first report of an organic transistor it highlights the key developments leading to the successful manufacture of microprocessors and other complex circuits incorporating organic transistors. Both batch processing (based on silicon integrated circuit technology) as well as mass-printing, roll-to-roll (R2R) approaches are discussed. Currently, the best circuit performances are achieved using batch processing. It is suggested that an emerging, large mass-market for electronic tags may dictate that R2R manufacture will likely be required to meet the high throughput rates needed. However, significant improvements in resolution and registration are necessary to achieve increased circuit operating speeds.

  8. Electronic circuits and systems: A compilation. [including integrated circuits, logic circuits, varactor diode circuits, low pass filters, and optical equipment circuits

    Science.gov (United States)

    1975-01-01

    Technological information is presented electronic circuits and systems which have potential utility outside the aerospace community. Topics discussed include circuit components such as filters, converters, and integrators, circuits designed for use with specific equipment or systems, and circuits designed primarily for use with optical equipment or displays.

  9. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

    Science.gov (United States)

    Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2014-08-11

    We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

  10. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  11. Maximum Temperature Detection System for Integrated Circuits

    Science.gov (United States)

    Frankiewicz, Maciej; Kos, Andrzej

    2015-03-01

    The paper describes structure and measurement results of the system detecting present maximum temperature on the surface of an integrated circuit. The system consists of the set of proportional to absolute temperature sensors, temperature processing path and a digital part designed in VHDL. Analogue parts of the circuit where designed with full-custom technique. The system is a part of temperature-controlled oscillator circuit - a power management system based on dynamic frequency scaling method. The oscillator cooperates with microprocessor dedicated for thermal experiments. The whole system is implemented in UMC CMOS 0.18 μm (1.8 V) technology.

  12. Solution methods for very highly integrated circuits.

    Energy Technology Data Exchange (ETDEWEB)

    Nong, Ryan; Thornquist, Heidi K.; Chen, Yao; Mei, Ting; Santarelli, Keith R.; Tuminaro, Raymond Stephen

    2010-12-01

    While advances in manufacturing enable the fabrication of integrated circuits containing tens-to-hundreds of millions of devices, the time-sensitive modeling and simulation necessary to design these circuits poses a significant computational challenge. This is especially true for mixed-signal integrated circuits where detailed performance analyses are necessary for the individual analog/digital circuit components as well as the full system. When the integrated circuit has millions of devices, performing a full system simulation is practically infeasible using currently available Electrical Design Automation (EDA) tools. The principal reason for this is the time required for the nonlinear solver to compute the solutions of large linearized systems during the simulation of these circuits. The research presented in this report aims to address the computational difficulties introduced by these large linearized systems by using Model Order Reduction (MOR) to (i) generate specialized preconditioners that accelerate the computation of the linear system solution and (ii) reduce the overall dynamical system size. MOR techniques attempt to produce macromodels that capture the desired input-output behavior of larger dynamical systems and enable substantial speedups in simulation time. Several MOR techniques that have been developed under the LDRD on 'Solution Methods for Very Highly Integrated Circuits' will be presented in this report. Among those presented are techniques for linear time-invariant dynamical systems that either extend current approaches or improve the time-domain performance of the reduced model using novel error bounds and a new approach for linear time-varying dynamical systems that guarantees dimension reduction, which has not been proven before. Progress on preconditioning power grid systems using multi-grid techniques will be presented as well as a framework for delivering MOR techniques to the user community using Trilinos and the Xyce circuit

  13. Plasmonic and electronic device-based integrated circuits and their characteristics

    Science.gov (United States)

    Sakai, H.; Okahisa, S.; Nakayama, Y.; Nakayama, K.; Fukuhara, M.; Kimura, Y.; Ishii, Y.; Fukuda, M.

    2016-11-01

    This paper presents a plasmonic circuit that has been monolithically integrated with electronic devices on a silicon substrate and then discusses the concept behind this circuit. To form the proposed circuit, two plasmonic waveguides and a detector are integrated with metal-oxide-semiconductor field-effect transistors (MOSFETs) on the substrate. In the circuit, intensity signals or coherent plasmonic signals are generated by coherent light at an operating wavelength at which silicon is transparent, and these signals propagate along the waveguides before they are converted into electrical signals by the detector. These electrical intensity and coherent signals then drive the MOSFETs during both DC and AC operation. The measured performances of the devices indicate that surface plasmon polaritons propagate on the metal surface at the speed of light and drive the electronic devices without any absorption in the silicon.

  14. Physical limits for scaling of integrated circuits

    Science.gov (United States)

    Nawrocki, Waldemar

    2010-11-01

    In this paper we discuss some physical limits for scaling of devices and conducting paths inside of semiconductor integrated circuits (ICs). Since 40 years only a semiconductor technology, mostly the CMOS and the TTL technologies, are used for fabrication of integrated circuits in the industrial scale. Miniaturization of electronic devices in integrated circuits has technological limits and physical limits as well. In 2010 best parameters of commercial ICs shown the dual-core Intel Core i5-670 processor manufactured in the technology of 32 nm. Its clock frequency in turbo mode is 3.73 GHz. A forecast of the development of the semiconductor industry (ITRS 2009) predicts that sizes of electronic devices in ICs circuits will be smaller than 10 nm in the next 10 years. The physical gate length in a MOSFET will even amount 7 nm in the year 2024. At least 5 physical effects should be taken into account if we discuss limits of scaling of integrated circuits.

  15. Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

    Science.gov (United States)

    Mehdi, Imran; Mazed, Mohammad; Siegel, Peter; Smith, R. Peter

    1995-01-01

    Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

  16. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon.

    Science.gov (United States)

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-04-04

    Microchannel plates are vacuum-based electron multipliers for particle--in particular, photon--detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80-120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200 °C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

  17. Human-friendly organic integrated circuits

    Directory of Open Access Journals (Sweden)

    Tsuyoshi Sekitani

    2011-09-01

    Full Text Available Many electronic systems such as flat-panel displays, optical detectors, and sensor arrays would benefit greatly from mechanical flexibility. Ultraflexible and foldable electronics demonstrate ultimate flexibility, and are highly portable. A major obstacle toward the development of foldable electronics is the fundamental compromise between operation voltage, transistor performance, and mechanical flexibility. This review describes foldable and conformable integrated circuits based on organic thin-film transistors (TFTs with very high mechanical stability. We review our work on such transistors and integrated circuits, that continue to operate without failure, without detectable degradation during folding of the plastic substrate.

  18. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers

    Science.gov (United States)

    2012-12-01

    Pcomp-6x50 µm PHEMT). .............4 Figure 4. An 8-GHz load-pull simulation of PAE (6x50 µm PHEMT). ........................................4...layout. ..........................................................................9 Figure 12. MMIC 5–11 GHz output power and PAE performance...6x50 µm PHEMT). ...........11 Figure 16. A 4-GHz load-pull simulation of PAE (6x50 µm PHEMT). ......................................12 Figure 17

  19. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers (Part 2)

    Science.gov (United States)

    2013-07-01

    2 Figure 2. A 2-GHz load-pull simulation of output power (Pcomp-6 x 65 µm PHEMT). ..............2 Figure 3. A 2-GHz load-pull simulation of PAE (6...5. MMIC 1–5 GHz output power and PAE performance simulation (1, 2, 3, and 4 GHz...load-pull simulation of PAE (6 x 50 µm PHEMT). .......................................7 Figure 9. MMIC 10–19 GHz broadband power amplifier linear

  20. Plasmonic integrated circuits comprising metal waveguides, multiplexer/demultiplexer, detectors, and logic circuits on a silicon substrate

    Science.gov (United States)

    Fukuda, M.; Ota, M.; Sumimura, A.; Okahisa, S.; Ito, M.; Ishii, Y.; Ishiyama, T.

    2017-05-01

    A plasmonic integrated circuit configuration comprising plasmonic and electronic components is presented and the feasibility for high-speed signal processing applications is discussed. In integrated circuits, plasmonic signals transmit data at high transfer rates with light velocity. Plasmonic and electronic components such as wavelength-divisionmultiplexing (WDM) networks comprising metal wires, plasmonic multiplexers/demultiplexers, and crossing metal wires are connected via plasmonic waveguides on the nanometer or micrometer scales. To merge plasmonic and electronic components, several types of plasmonic components were developed. To ensure that the plasmonic components could be easily fabricated and monolithically integrated onto a silicon substrate using silicon complementary metal-oxide-semiconductor (CMOS)-compatible processes, the components were fabricated on a Si substrate and made from silicon, silicon oxides, and metal; no other materials were used in the fabrication. The plasmonic components operated in the 1300- and 1550-nm-wavelength bands, which are typically employed in optical fiber communication systems. The plasmonic logic circuits were formed by patterning a silicon oxide film on a metal film, and the operation as a half adder was confirmed. The computed plasmonic signals can propagate through the plasmonic WDM networks and be connected to electronic integrated circuits at high data-transfer rates.

  1. Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

    Science.gov (United States)

    Raring, James W.

    The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high

  2. System-level integrated circuit (SLIC) development for phased array antenna applications

    Science.gov (United States)

    Shalkhauser, K. A.; Raquet, C. A.

    1991-01-01

    A microwave/millimeter wave system-level integrated circuit (SLIC) being developed for use in phased array antenna applications is described. The program goal is to design, fabricate, test, and deliver an advanced integrated circuit that merges radio frequency (RF) monolithic microwave integrated circuit (MMIC) technologies with digital, photonic, and analog circuitry that provide control, support, and interface functions. As a whole, the SLIC will offer improvements in RF device performance, uniformity, and stability while enabling accurate, rapid, repeatable control of the RF signal. Furthermore, the SLIC program addresses issues relating to insertion of solid state devices into antenna systems, such as the reduction in number of bias, control, and signal lines. Program goals, approach, and status are discussed.

  3. Bottom-up organic integrated circuits

    NARCIS (Netherlands)

    Smits, Edsger C. P.; Mathijssen, Simon G. J.; van Hal, Paul A.; Setayesh, Sepas; Geuns, Thomas C. T.; Mutsaers, Kees A. H. A.; Cantatore, Eugenio; Wondergem, Harry J.; Werzer, Oliver; Resel, Roland; Kemerink, Martijn; Kirchmeyer, Stephan; Muzafarov, Aziz M.; Ponomarenko, Sergei A.; de Boer, Bert; Blom, Paul W. M.; de Leeuw, Dago M.

    2008-01-01

    Self- assembly - the autonomous organization of components into patterns and structures(1) - is a promising technology for the mass production of organic electronics. Making integrated circuits using a bottom- up approach involving self- assembling molecules was proposed(2) in the 1970s. The basic b

  4. LC Quadrature Generation in Integrated Circuits

    DEFF Research Database (Denmark)

    Christensen, Kåre Tais

    2001-01-01

    Today quadrature signals for IQ demodulation are provided through RC polyphase networks, quadrature oscillators or double frequency VCOs. This paper presents a new method for generating quadrature signals in integrated circuits using only inductors and capacitors. This LC quadrature generation me...

  5. Integrated Circuits in the Introductory Electronics Laboratory

    Science.gov (United States)

    English, Thomas C.; Lind, David A.

    1973-01-01

    Discusses the use of an integrated circuit operational amplifier in an introductory electronics laboratory course for undergraduate science majors. The advantages of this approach and the implications for scientific instrumentation are identified. Describes a number of experiments suitable for the undergraduate laboratory. (Author/DF)

  6. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

  7. Accurate Electromagnetic Modeling Methods for Integrated Circuits

    NARCIS (Netherlands)

    Sheng, Z.

    2010-01-01

    The present development of modern integrated circuits (IC’s) is characterized by a number of critical factors that make their design and verification considerably more difficult than before. This dissertation addresses the important questions of modeling all electromagnetic behavior of features on t

  8. Monolithic CMOS-MEMS integration for high-g accelerometers

    Science.gov (United States)

    Narasimhan, Vinayak; Li, Holden; Tan, Chuan Seng

    2014-10-01

    This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC's SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.

  9. Data readout system utilizing photonic integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Stopiński, S., E-mail: S.Stopinski@tue.nl [COBRA Research Institute, Eindhoven University of Technology (Netherlands); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology (Poland); Malinowski, M.; Piramidowicz, R. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology (Poland); Smit, M.K.; Leijtens, X.J.M. [COBRA Research Institute, Eindhoven University of Technology (Netherlands)

    2013-10-11

    We describe a novel optical solution for data readout systems. The core of the system is an Indium-Phosphide photonic integrated circuit performing as a front-end readout unit. It functions as an optical serializer in which the serialization of the input signal is provided by means of on-chip optical delay lines. The circuit employs electro-optic phase shifters to build amplitude modulators, power splitters for signal distribution, semiconductor optical amplifiers for signal amplification as well as on-chip reflectors. We present the concept of the system, the design and first characterization results of the devices that were fabricated in a multi-project wafer run.

  10. Power management techniques for integrated circuit design

    CERN Document Server

    Chen, Ke-Horng

    2016-01-01

    This book begins with the premise that energy demands are directing scientists towards ever-greener methods of power management, so highly integrated power control ICs (integrated chip/circuit) are increasingly in demand for further reducing power consumption. * A timely and comprehensive reference guide for IC designers dealing with the increasingly widespread demand for integrated low power management * Includes new topics such as LED lighting, fast transient response, DVS-tracking and design with advanced technology nodes * Leading author (Chen) is an active and renowned contributor to the power management IC design field, and has extensive industry experience * Accompanying website includes presentation files with book illustrations, lecture notes, simulation circuits, solution manuals, instructors manuals, and program downloads.

  11. Development of 3D integrated circuits for HEP

    Energy Technology Data Exchange (ETDEWEB)

    Yarema, R.; /Fermilab

    2006-09-01

    Three dimensional integrated circuits are well suited to improving circuit bandwidth and increasing effective circuit density. Recent advances in industry have made 3D integrated circuits an option for HEP. The 3D technology is discussed in this paper and several examples are shown. Design of a 3D demonstrator chip for the ILC is presented.

  12. An integrator circuit in cerebellar cortex.

    Science.gov (United States)

    Maex, Reinoud; Steuber, Volker

    2013-09-01

    The brain builds dynamic models of the body and the outside world to predict the consequences of actions and stimuli. A well-known example is the oculomotor integrator, which anticipates the position-dependent elasticity forces acting on the eye ball by mathematically integrating over time oculomotor velocity commands. Many models of neural integration have been proposed, based on feedback excitation, lateral inhibition or intrinsic neuronal nonlinearities. We report here that a computational model of the cerebellar cortex, a structure thought to implement dynamic models, reveals a hitherto unrecognized integrator circuit. In this model, comprising Purkinje cells, molecular layer interneurons and parallel fibres, Purkinje cells were able to generate responses lasting more than 10 s, to which both neuronal and network mechanisms contributed. Activation of the somatic fast sodium current by subthreshold voltage fluctuations was able to maintain pulse-evoked graded persistent activity, whereas lateral inhibition among Purkinje cells via recurrent axon collaterals further prolonged the responses to step and sine wave stimulation. The responses of Purkinje cells decayed with a time-constant whose value depended on their baseline spike rate, with integration vanishing at low ( 30 per s). The model predicts that the apparently fast circuit of the cerebellar cortex may control the timing of slow processes without having to rely on sensory feedback. Thus, the cerebellar cortex may contain an adaptive temporal integrator, with the sensitivity of integration to the baseline spike rate offering a potential mechanism of plasticity of the response time-constant.

  13. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Zhou, Fan; Wang, Baojun; Bian, Jing; Wang, Wei

    2006-02-01

    We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0°×12.6°, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber.

  14. Tomographic reconstruction of an integrated circuit interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Levine, Z.H. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Kalukin, A.R. [Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States); Frigo, S.P.; McNulty, I. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Kuhn, M. [Digital Equipment Corporation, Hudson, Massachusetts 01749 (United States)

    1999-01-01

    An Al{endash}W-silica integrated circuit interconnect sample was thinned to several {mu}m and scanned across a 200 nm focal spot of a Fresnel zone plate operating at photon energy of 1573 eV. The experiment was performed on beamline 2-ID-B of the Advanced Photon Source, a third-generation synchrotron facility. Thirteen scanned projections of the sample were acquired over the angular range {plus_minus}69.2{degree}. At least 301{times}301 pixels were acquired at each angle with a step size of 77{times}57 nm. A three-dimensional image with an approximate uncertainty of 400 nm was reconstructed from projection data using a standard algorithm. The two layers of the integrated circuit and the presence of the focused ion beam markers on the surface of the sample are clearly shown in the reconstruction. {copyright} {ital 1999 American Institute of Physics.}

  15. Viewing Integrated-Circuit Interconnections By SEM

    Science.gov (United States)

    Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

    1990-01-01

    Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

  16. The RD53A Integrated Circuit

    CERN Document Server

    Garcia-Sciveres, Maurice

    2017-01-01

    Implementation details for the RD53A pixel readout integrated circuit designed by the RD53 Collaboration. This is a companion to the specifications document and will eventually become a reference for chip users. RD53A is not intended to be a final production IC for use in an experiment, and contains design variations for testing purposes, making the pixel matrix non-uniform. The chip size is 20.0 mm by 11.8 mm.

  17. High pressure-resistant SU-8 microchannels for monolithic porous structure integration

    Science.gov (United States)

    Carlier, Julien; Chuda, Katarzyna; Arscott, Steve; Thomy, Vincent; Verbeke, Bernard; Coqueret, Xavier; Camart, Jean Christophe; Druon, Christian; Tabourier, Pierre

    2006-10-01

    Integrated lab-on-chip (LOC) microsystems dedicated to proteomic analysis require specific pretreatment steps such as protein trypsic digestion, concentration, desalting or separation of biological samples. These steps can be achieved thanks to porous monolithic polymers. This paper deals with the integration of such a polymer into SU-8 microchannels by using a multi-material technology (SU-8, Pyrex and silicon). A solution for the fabrication of complete polymer microchannels which are high pressure- and solvents-resistant is proposed. This technique uses the negative photoresist SU-8 which is compatible with the protein analysis performed here. Our process requires a novel technological step using a silane coupling agent. This modification of the SU-8/Pyrex interface leads to the fabrication of a 100 µm × 160 µm section microchannel (length of 3 cm), closed with a Pyrex® lid by SU-8 bonding resistant to 80 bar. An improvement of the SU-8/monolithic structure is also demonstrated thanks to a specific treatment of the polymer enabling good anchoring of the monolith in the microchannels, and the pressure-resistance tests were also achieved with the monolithic structure integrated in the microchannels. A digestion step of a protein sample of benzoylarginine ethyl ester in a SU-8 microchannel was achieved after the functionalization of a monolith anchored in the microchannel. Analysis by UV/VIS spectroscopy of this in situ digestion has been reported.

  18. Progress in radiation immune thermionic integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Lynn, D.K.; McCormick, J.B. (comps.)

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs.

  19. Progress in radiation immune thermionic integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Lynn, D.K.; McCormick, J.B. (comps.)

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs.

  20. Power system with an integrated lubrication circuit

    Science.gov (United States)

    Hoff, Brian D.; Akasam, Sivaprasad; Algrain, Marcelo C.; Johnson, Kris W.; Lane, William H.

    2009-11-10

    A power system includes an engine having a first lubrication circuit and at least one auxiliary power unit having a second lubrication circuit. The first lubrication circuit is in fluid communication with the second lubrication circuit.

  1. Self-contained sub-millimeter wave rectifying antenna integrated circuit

    Science.gov (United States)

    Siegel, Peter H. (Inventor)

    2004-01-01

    The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

  2. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    Science.gov (United States)

    Clark, Lawrence T.; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  3. Integrated Circuits for Analog Signal Processing

    CERN Document Server

    2013-01-01

      This book presents theory, design methods and novel applications for integrated circuits for analog signal processing.  The discussion covers a wide variety of active devices, active elements and amplifiers, working in voltage mode, current mode and mixed mode.  This includes voltage operational amplifiers, current operational amplifiers, operational transconductance amplifiers, operational transresistance amplifiers, current conveyors, current differencing transconductance amplifiers, etc.  Design methods and challenges posed by nanometer technology are discussed and applications described, including signal amplification, filtering, data acquisition systems such as neural recording, sensor conditioning such as biomedical implants, actuator conditioning, noise generators, oscillators, mixers, etc.   Presents analysis and synthesis methods to generate all circuit topologies from which the designer can select the best one for the desired application; Includes design guidelines for active devices/elements...

  4. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-01-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes. PMID:28145513

  5. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-02-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

  6. Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes.

    Science.gov (United States)

    Gallivanoni, A; Rech, I; Resnati, D; Ghioni, M; Cova, S

    2006-06-12

    A new integrated active quenching circuit (i-AQC) designed in a standard CMOS process is presented, capable of operating with any available single photon avalanche diode (SPAD) over wide temperature range. The circuit is suitable for attaining high photon timing resolution also with wide-area SPADs. The new i-AQC integrates the basic active-quenching loop, a patented low-side timing circuit comprising a fast pulse pick-up scheme that substantially improves time-jitter performance, and a novel active-load passive quenching mechanism (consisting of a current mirror rather than a traditional high-value resistor) greatly improves the maximum counting rate. The circuit is also suitable for portable instruments, miniaturized detector modules and SPAD-array detectors. The overall features of the circuit may open the way to new developments in diversified applications of time-correlated photon counting in life sciences and material sciences.

  7. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor

    NARCIS (Netherlands)

    Pagkali, Varvara; Petrou, Panagiota S.; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E.

    2016-01-01

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm2

  8. Monolithic integration of DUV-induced waveguides into plastic microfluidic chip for optical manipulation

    DEFF Research Database (Denmark)

    Khoury Arvelo, Maria; Vannahme, Christoph; Sørensen, Kristian Tølbøl

    2014-01-01

    A monolithic polymer optofluidic chip for manipulation of microbeads in flow is demonstrated. On this chip, polymer waveguides induced by Deep UV lithography are integrated with microfluidic channels. The optical propagation losses of the waveguides are measured to be 0.66±0.13 d...

  9. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor

    NARCIS (Netherlands)

    Pagkali, Varvara; Petrou, Panagiota S.; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E.

    2017-01-01

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm2

  10. Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

    DEFF Research Database (Denmark)

    Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

    2010-01-01

    The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon av...

  11. 5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator

    Science.gov (United States)

    Zhang, Y. X.; Zhao, L. J.; Niu, B.; Pan, J. Q.; Wang, W.

    2010-05-01

    A novel EAM/PD monolithically-integrated optical logic element is presented. 5Gb/s optical logic AND gate operations at about -2 V for non-return-to-zero (NRZ) signals with8.4dB extinction ratio and16mW absorbed optical power was demonstrated.

  12. Integrated on-chip mass spectrometry reaction monitoring in microfluidic devices containing porous polymer monolithic columns.

    Science.gov (United States)

    Dietze, C; Schulze, S; Ohla, S; Gilmore, K; Seeberger, P H; Belder, D

    2016-09-21

    Chip-based microfluidics enable the seamless integration of different functions into single devices. Here, we present microfluidic chips containing porous polymer monolithic columns as a means to facilitate chemical transformations as well as both downstream chromatographic separation and mass spectrometric analysis. Rapid liquid phase lithography prototyping creates the multifunctional device economically.

  13. Low-Loss 256-Channel AWG Module with Monolithically Integrated Spot-Size Converters

    Institute of Scientific and Technical Information of China (English)

    M. Itoh; S. Kamei; M. Ishii; Y. Hida; T. Shibata; Y. Hibino

    2003-01-01

    We developed a compact fiber-pigtailed 256-channel AWG module with 1.5% △ waveguides.By monolithically integrating spot-size converters with input/output waveguides, we achieved a lowinsertion loss of 2.6-4.1 dB with a low background crosstalk of -40 dB.

  14. Low-Loss 256-Channel AWG Module with Monolithically Integrated Spot-Size Converters

    Institute of Scientific and Technical Information of China (English)

    M.; Itoh; S.; Kamei; M.; Ishii; Y.; Hida; T.; Shibata; Y.; Hibino

    2003-01-01

    We developed a compact fiber-pigtailed 256-channel AWG module with 1.5% A waveguides. By monolithically integrating spot-size converters with input/output waveguides, we achieved a low insertion loss of 2.6-4.1 dB with a low background crosstalk of-40 dB.

  15. Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

    Science.gov (United States)

    Wang, Yang; Pan, Jiao-Qing; Zhao, Ling-Juan; Zhu, Hong-Liang; Wang, Wei

    2010-12-01

    Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

  16. Application prof iles of integrated circuits in various industry fields

    Institute of Scientific and Technical Information of China (English)

    Hongjing Zhang

    2014-01-01

    Integrated circuits play an increasingly important role in various fields. The aging effects, which lead to robustness problems in integrated circuits, has gained more attention. Therefore, during the design process the robustness problem must already be calculated. Generally, the time-dependent influences such as NBTI (negative bias temperature instability) and HCI (hot carrier injection) contribute to circuit aging problems [1] .

  17. Diode lasers and photonic integrated circuits

    CERN Document Server

    Coldren, Larry A; Mashanovitch, Milan L

    2011-01-01

    Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book wil

  18. Thermoelectricity from wasted heat of integrated circuits

    KAUST Repository

    Fahad, Hossain M.

    2012-05-22

    We demonstrate that waste heat from integrated circuits especially computer microprocessors can be recycled as valuable electricity to power up a portion of the circuitry or other important accessories such as on-chip cooling modules, etc. This gives a positive spin to a negative effect of ever increasing heat dissipation associated with increased power consumption aligned with shrinking down trend of transistor dimension. This concept can also be used as an important vehicle for self-powered systemson- chip. We provide theoretical analysis supported by simulation data followed by experimental verification of on-chip thermoelectricity generation from dissipated (otherwise wasted) heat of a microprocessor.

  19. Accelerating functional verification of an integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Deindl, Michael; Ruedinger, Jeffrey Joseph; Zoellin, Christian G.

    2015-10-27

    Illustrative embodiments include a method, system, and computer program product for accelerating functional verification in simulation testing of an integrated circuit (IC). Using a processor and a memory, a serial operation is replaced with a direct register access operation, wherein the serial operation is configured to perform bit shifting operation using a register in a simulation of the IC. The serial operation is blocked from manipulating the register in the simulation of the IC. Using the register in the simulation of the IC, the direct register access operation is performed in place of the serial operation.

  20. Testing Fixture For Microwave Integrated Circuits

    Science.gov (United States)

    Romanofsky, Robert; Shalkhauser, Kurt

    1989-01-01

    Testing fixture facilitates radio-frequency characterization of microwave and millimeter-wave integrated circuits. Includes base onto which two cosine-tapered ridge waveguide-to-microstrip transitions fastened. Length and profile of taper determined analytically to provide maximum bandwidth and minimum insertion loss. Each cosine taper provides transformation from high impedance of waveguide to characteristic impedance of microstrip. Used in conjunction with automatic network analyzer to provide user with deembedded scattering parameters of device under test. Operates from 26.5 to 40.0 GHz, but operation extends to much higher frequencies.

  1. Microwave plasmatrons for giant integrated circuit processing

    Energy Technology Data Exchange (ETDEWEB)

    Petrin, A.B.

    2000-02-01

    A method for calculating the interaction of a powerful microwave with a plane layer of magnetoactive low-pressure plasma under conditions of electron cyclotron resonance is presented. In this paper, the plasma layer is situated between a plane dielectric layer and a plane metal screen. The calculation model contains the microwave energy balance, particle balance, and electron energy balance. The equation that expressed microwave properties of nonuniform magnetoactive plasma is found. The numerical calculations of the microwave-plasma interaction for a one-dimensional model of the problem are considered. Applications of the results for microwave plasmatrons designed for processing giant integrated circuits are suggested.

  2. 3D packaging for integrated circuit systems

    Energy Technology Data Exchange (ETDEWEB)

    Chu, D.; Palmer, D.W. [eds.

    1996-11-01

    A goal was set for high density, high performance microelectronics pursued through a dense 3D packing of integrated circuits. A {open_quotes}tool set{close_quotes} of assembly processes have been developed that enable 3D system designs: 3D thermal analysis, silicon electrical through vias, IC thinning, mounting wells in silicon, adhesives for silicon stacking, pretesting of IC chips before commitment to stacks, and bond pad bumping. Validation of these process developments occurred through both Sandia prototypes and subsequent commercial examples.

  3. Computer Aided Engineering of Semiconductor Integrated Circuits

    Science.gov (United States)

    1976-04-01

    transistor opera tion; (4) theoretical invest! jations of carrifr mobli *!;y *"« inversion layer of an MOSFET; (5) mathematical investigations for high...satisfactory greLnt «Lh experiment. In time, the rapid groWth of se.r- oonduotor integrated circuit (IC, technology created ^ ^ °n" £or which this theory was...and Technology of Semiconductor Devices, John Wiley and Sons, Inc., N.Y. (1967). [2] S. K. Ghandi, The Theory and Practice of

  4. Monolithic ionizing particle detector based on active matrix of functionally integrated structures

    Energy Technology Data Exchange (ETDEWEB)

    Murashev, V.N. [National University of Science and Technology “MISIS” (Russian Federation); Legotin, S.A., E-mail: serlego@mail.ru [National University of Science and Technology “MISIS” (Russian Federation); Karmanov, D.E. [Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics (MSU SINP) (Russian Federation); Baryshnikov, F.M.; Didenko, S.I. [National University of Science and Technology “MISIS” (Russian Federation)

    2014-02-15

    Highlights: • A new type of monolithic silicon position detector is presented. • An operating principle, design and technology of the detector are described. • Calculated estimations of the detecting efficiency are carried out. • Experimental results of alpha-particle and electron detection are shown. -- Abstract: An operating principle, design and technology of a new type of the monolithic silicon position detector (MSPD) for registration of ionizing particles and photons are described. The detector represents a specialized monolithic silicon VLSI that contains a two-dimensional detecting matrix of active functionally integrated bipolar structures and peripheral electronic circuitry for signal amplification and processing. This paper presents experimental results of α-particles and electrons detection with position accuracy and operation speed better than 12.5 μm and 1 ns, respectively. The given estimations show the capabilities of this detector and its advantages in comparison with analogs.

  5. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    Science.gov (United States)

    2017-03-10

    AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final...TYPE Final 3. DATES COVERED (From - To) 15 Sep 2015 to 14 Sep 2016 4. TITLE AND SUBTITLE Laser integration on silicon photonic circuits through...parallel integration of III-V lasers on silicon photonic integrated circuits. The report discusses the technological process that has been developed as

  6. SPICE Level 3 and BSIM3v3.1 characterization of monolithic integrated CMOS-MEMS devices

    Science.gov (United States)

    Staple, Bevan D.; Watts, Herman A.; Dyck, Christopher W.; Griego, A. P.; Hewlett, F. W.; Smith, James H.

    1998-09-01

    Thy monolithic integration of MicroElectroMechanical Systems (MEMS) with the driving, controlling, and signal processing electronics promises to improve the performance of micromechanical devices as well as lower their manufacturing, packaging, and instrumentation costs. Key to this integration is the proper interleaving, combining, and customizing of the manufacturing processes to produce functional integrated micromechanical devices with electronics. We have developed a MEMS-first monolithic integrated process that first seals the micromechanical devices in a planarized trench and then builds the electronics in a conventional CMOS process. To date, most of the research published on this technology has focused on the performance characteristics of the mechanical portion of the devices, with little information on the attributes of the accompanying electronics. This work attempts to reduce this information void by presenting the results of SPICE Level 3 and BSIM3v3.1 model parameters extracted for the CMOS portion of the MEMS-first process. Transistor-level simulations of MOSFET current, capacitance, output resistance, and transconductance versus voltage using the extracted model parameters closely match the measured data. Moreover, in model validation efforts, circuit-level simulation values for the average gate propagation delay in a 101-stage ring oscillator are within 13 - 18% of the measured data. These results establish the following: (1) the MEMS-first approach produces functional CMOS devices integrated on a single chip with MEMS devices and (2) the devices manufactured in the approach have excellent transistor characteristics. Thus, the MEMS-first approach renders a solid technology foundation for customers designing in the technology.

  7. Harnessing optical forces in integrated photonic circuits.

    Science.gov (United States)

    Li, Mo; Pernice, W H P; Xiong, C; Baehr-Jones, T; Hochberg, M; Tang, H X

    2008-11-27

    The force exerted by photons is of fundamental importance in light-matter interactions. For example, in free space, optical tweezers have been widely used to manipulate atoms and microscale dielectric particles. This optical force is expected to be greatly enhanced in integrated photonic circuits in which light is highly concentrated at the nanoscale. Harnessing the optical force on a semiconductor chip will allow solid state devices, such as electromechanical systems, to operate under new physical principles. Indeed, recent experiments have elucidated the radiation forces of light in high-finesse optical microcavities, but the large footprint of these devices ultimately prevents scaling down to nanoscale dimensions. Recent theoretical work has predicted that a transverse optical force can be generated and used directly for electromechanical actuation without the need for a high-finesse cavity. However, on-chip exploitation of this force has been a significant challenge, primarily owing to the lack of efficient nanoscale mechanical transducers in the photonics domain. Here we report the direct detection and exploitation of transverse optical forces in an integrated silicon photonic circuit through an embedded nanomechanical resonator. The nanomechanical device, a free-standing waveguide, is driven by the optical force and read out through evanescent coupling of the guided light to the dielectric substrate. This new optical force enables all-optical operation of nanomechanical systems on a CMOS (complementary metal-oxide-semiconductor)-compatible platform, with substantial bandwidth and design flexibility compared to conventional electrical-based schemes.

  8. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  9. An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits

    Science.gov (United States)

    Abramov, I. I.

    2006-05-01

    An automatic synthesis method of equivalent circuits of integrated circuit devices is described in the paper. This method is based on a physical approach to construction of finite-difference approximation to basic equations of semiconductor device physics. It allows to synthesize compact equivalent circuits of different devices automatically as alternative to, for example, sufficiently formal BSIM2 and BSIM3 models used in circuit simulation programs of SPICE type. The method is one of possible variants of general methodology for automatic synthesis of compact equivalent circuits of almost arbitrary devices and circuit-type structures of micro- and nanoelecronics [1]. The method is easily extended in the case of necessity to account thermal effects in integrated circuits. It was shown that its application would be especially perspective for analysis of integrated circuit fragments as a whole and for identification of significant collective physical effects, including parasitic effects in VLSI and ULSI. In the paper the examples illustrating possibilities of the method for automatic synthesis of compact equivalent circuits of some of semiconductor devices and integrated circuit devices are considered. Special attention is given to examples of integrated circuit devices for coarse grids of spatial discretization (less than 10 nodes).

  10. Multi-format all-optical processing based on a large-scale, hybridly integrated photonic circuit.

    Science.gov (United States)

    Bougioukos, M; Kouloumentas, Ch; Spyropoulou, M; Giannoulis, G; Kalavrouziotis, D; Maziotis, A; Bakopoulos, P; Harmon, R; Rogers, D; Harrison, J; Poustie, A; Maxwell, G; Avramopoulos, H

    2011-06-01

    We investigate through numerical studies and experiments the performance of a large scale, silica-on-silicon photonic integrated circuit for multi-format regeneration and wavelength-conversion. The circuit encompasses a monolithically integrated array of four SOAs inside two parallel Mach-Zehnder structures, four delay interferometers and a large number of silica waveguides and couplers. Exploiting phase-incoherent techniques, the circuit is capable of processing OOK signals at variable bit rates, DPSK signals at 22 or 44 Gb/s and DQPSK signals at 44 Gbaud. Simulation studies reveal the wavelength-conversion potential of the circuit with enhanced regenerative capabilities for OOK and DPSK modulation formats and acceptable quality degradation for DQPSK format. Regeneration of 22 Gb/s OOK signals with amplified spontaneous emission (ASE) noise and DPSK data signals degraded with amplitude, phase and ASE noise is experimentally validated demonstrating a power penalty improvement up to 1.5 dB.

  11. Monolithic photonic integration of suspended light emitting diode, waveguide and photodetector

    CERN Document Server

    Wang, Yongjin; Gao, Xumin; Cai, Wei; Xu, Yin; Yuan, Jialei; Zhu, Guixia; Yang, Yongchao; Cao, Xun; Zhu, Hongbo; Gruenberg, Peter

    2015-01-01

    We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the on-chip optical interconnects. This work paves the way towards novel active electro-optical sensing system and planar optical communication in the visible range.

  12. Accurate pattern registration for integrated circuit tomography

    Energy Technology Data Exchange (ETDEWEB)

    Levine, Zachary H.; Grantham, Steven; Neogi, Suneeta; Frigo, Sean P.; McNulty, Ian; Retsch, Cornelia C.; Wang, Yuxin; Lucatorto, Thomas B.

    2001-07-15

    As part of an effort to develop high resolution microtomography for engineered structures, a two-level copper integrated circuit interconnect was imaged using 1.83 keV x rays at 14 angles employing a full-field Fresnel zone plate microscope. A major requirement for high resolution microtomography is the accurate registration of the reference axes in each of the many views needed for a reconstruction. A reconstruction with 100 nm resolution would require registration accuracy of 30 nm or better. This work demonstrates that even images that have strong interference fringes can be used to obtain accurate fiducials through the use of Radon transforms. We show that we are able to locate the coordinates of the rectilinear circuit patterns to 28 nm. The procedure is validated by agreement between an x-ray parallax measurement of 1.41{+-}0.17 {mu}m and a measurement of 1.58{+-}0.08 {mu}m from a scanning electron microscope image of a cross section.

  13. Single facet slotted Fabry-Perot laser and its application in photonic integrated circuits

    Science.gov (United States)

    Yang, Hua; Morrissey, Padraic; Lu, Qiao Y.; Cotter, William; Daunt, Chris L. L. M.; O'Callaghan, James; Guo, Wei H.; Han, Wei; Donegan, John F.; Corbett, Brian; Peters, Frank H.

    2012-11-01

    In this paper, a single facet slotted Fabry-Perot (FP) laser is demonstrated to provide tunable, single mode operation and has been monolithically integrated into a photonic integrated circuit (PIC) with semiconductor optical amplifiers and a multimode interference coupler. These lasers are designed by incorporating slots into the ridge of traditional FP cavity lasers to achieve single mode output, integrability and tunability. With the feature size of the slots around 1μm, standard photolithographic techniques can be used in the fabrication of the devices. This provides a time and cost advantage in comparison to ebeam or holographic lithography as used for defining gratings in distributed feedback (DFB) or distrusted Bragg reflector (DBR) lasers, which are typically used in PICs. The competitive integrable single mode laser also enables the PIC to be fabricated using only one epitaxial growth and one etch process as is done with standard FP lasers. This process simplicity can reduce the cost and increase the yield.

  14. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

    Science.gov (United States)

    Nakazato, Kazuo

    2014-03-28

    By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

  15. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit

    Science.gov (United States)

    Nakazato, Kazuo

    2014-01-01

    By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor. PMID:24567475

  16. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  17. Photonic integrated circuits: new challenges for lithography

    Science.gov (United States)

    Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

    2016-10-01

    In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

  18. Parallel Jacobi EVD Methods on Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Chi-Chia Sun

    2014-01-01

    Full Text Available Design strategies for parallel iterative algorithms are presented. In order to further study different tradeoff strategies in design criteria for integrated circuits, A 10 × 10 Jacobi Brent-Luk-EVD array with the simplified μ-CORDIC processor is used as an example. The experimental results show that using the μ-CORDIC processor is beneficial for the design criteria as it yields a smaller area, faster overall computation time, and less energy consumption than the regular CORDIC processor. It is worth to notice that the proposed parallel EVD method can be applied to real-time and low-power array signal processing algorithms performing beamforming or DOA estimation.

  19. Post irradiation effects (PIE) in integrated circuits

    Science.gov (United States)

    Shaw, D. C.; Lowry, L.; Barnes, C.; Zakharia, M.; Agarwal, S.; Rax, B.

    1991-01-01

    Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).

  20. Broadband plasmonic absorber for photonic integrated circuits

    CERN Document Server

    Xiong, Xiao; Ren, Xi-Feng; Guo, Guang-Can

    2013-01-01

    The loss of surface plasmon polaritons has long been considered as a fatal shortcoming in information transport. Here we propose a plasmonic absorber utilizing this "shortcoming" to absorb the stray light in photonic integrated circuits (PICs). Based on adiabatic mode evolution, its performance is insensitive to incident wavelength with bandwidth larger than 300nm, and robust against surrounding environment and temperature. Besides, the use of metal enables it to be very compact and beneficial to thermal dissipation. With this 40um-long absorber, the absorption efficiency can be over 99.8% at 1550nm, with both the reflectivity and transmittance of incident light reduced to less than 0.1%. Such device may find various applications in PICs, to eliminate the residual strong pump laser or stray light.

  1. RD53A Integrated Circuit Specifications

    CERN Document Server

    Garcia-Sciveres, Mauricio

    2015-01-01

    Specifications for the RD53 collaboration’s first engineering wafer run of an integrated circuit (IC) for hybrid pixel detector readout, called RD53A. RD53A is intended to demonstrate in a large format IC the suitability of the technology (including radiation tolerance), the stable low threshold operation, and the high hit and trigger rate capabilities, required for HL-LHC upgrades of ATLAS and CMS. The wafer scale production will permit the experiments to prototype bump bonding assembly with realistic sensors in this new technology and to measure the performance of hybrid assemblies. RD53A is not intended to be a final production IC for use in an experiment, and will contain design variations for testing purposes, making the pixel matrix non-uniform.

  2. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Science.gov (United States)

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  3. Quantum well intermixing for photonic integrated circuits

    Science.gov (United States)

    Sun, Xiaolan

    2007-12-01

    In this thesis, several aspects of GaAsSb/AlSb multiple quantum well (MQW) heterostructures have been studied. First, it was shown that the GaAsSb MQWs with a direct band gap near 1.5 mum at room temperature could be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors, which can be applied to Vertical Cavity Surface Emitting Lasers (VCSELs). Secondly, an enhanced photoluminescence from GaAsSb MQWs was reported. The photoluminescence strength increased dramatically with arsenic fraction as conjectured. The peak photoluminescence from GaAs0.31Sb 0.69 was 208 times larger than that from GaSb. Thirdly, the strong photoluminescence from GaAsSb MQWs and the direct nature of the band gap near 1.5 mum at room temperature make the material favorable for intermixing studies. The samples were treated with ion implantation followed by rapid thermal annealing (RTA). A band gap blueshift as large as 198 nm was achieved with a modest ion dose and moderate annealing temperature. Photoluminescence strength for implanted samples generally increased with the annealing temperature. The energy blueshift was attributed to the interdiffusion of both the group III and group V sublattices. Finally, based on the interesting properties of GaAsSb MQWs, including the direct band gap near 1.5 mum, strong photoluminescence, a wide range of wavelength (1300--1500 nm) due to ion implantation-induced quantum well intermixing (QWI), and subpicosecond spin relaxation reported by Hall et al, we proposed to explore the possibilities for ultra-fast optical switching by investigating spin dynamics in semiconductor optical amplifiers (SOAs) containing InGaAs and GaSb MQWs. For circularly polarized pump and probe waves, the numerical simulation on the modal indices showed that the difference between the effective refractive index of the TE and TM modes was quite large, on the order of 0.03, resulting in a significant phase mismatch in a traveling length larger than 28 mum. Thus the

  4. Topology Optimization of Building Blocks for Photonic Integrated Circuits

    DEFF Research Database (Denmark)

    Jensen, Jakob Søndergaard; Sigmund, Ole

    2005-01-01

    Photonic integrated circuits are likely candidates as high speed replacements for the standard electrical integrated circuits of today. However, in order to obtain a satisfactorily performance many design prob- lems that up until now have resulted in too high losses must be resolved. In this work...... we demonstrate how the method of topology optimization can be used to design a variety of high performance building blocks for the future circuits....

  5. Model GC1312S Multifunction Integrated Optical Circuit Devices

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Model GC1312S multifunction integrated optical circuit device (MIOC) used in inertial-grade interferometric fiber optics gyroscopes (IFOGs) is fabricated by annealing and proton exchange process (APE). The unique feature of the device is the incorporation of the beat detection circuit besides all the features the conventional single Y-branch multifunction integrated optical circuit devices have. The device structure, operation principle and typical characteristics, etc., are briefly presented in this paper.

  6. Technology challenges for monolithically integrated waveguide demultiplexers Invited Paper

    Institute of Scientific and Technical Information of China (English)

    Lech Wosinski; Liu Liu; Ning Zhu; Lars Thylen

    2009-01-01

    A short overview of integrated waveguide demultiplexers for different applications in future highly inte- grated optical communication systems is presented. Some fabricated devices based on amorphous silicon nanowire technology are described.

  7. Surface-etched distributed Bragg reflector lasers in photonic integrated circuits

    Science.gov (United States)

    Price, Raymond Kirk

    Semiconductor lasers have been used as a highly efficient, coherent source of light for commercial, industrial, and medical applications. Recently, much work has been done to engineer optical devices with a high degree of functionality. Photonic integrated circuits (PICs) achieve technology's twin goals of miniaturization and integration by implementing multiple optical functions on a single chip. This dissertation shows that asymmetric cladding surface-etched distributed Bragg reflector (ACSE-DBR) lasers are ideal candidates for monolithic photonic integration for the purpose of optical heterodyning. The active laser devices in these ACSE-DBR lasers exhibit high quantum efficiencies, tunable performance, and narrow spectral linewidths. The asymmetric cladding ridge waveguides are shown to provide low-loss routing structures, enabling monolithic integration of active and passive devices with a small layout footprint. This technology is applied to two specific purposes: a dual wavelength source for generating terahertz radiation via optical heterodyning, and high-power DBR laser arrays for spectral beam combining. A dual-wavelength PIC at 850 nm for the purpose of optical heterodyning is presented in this work. The engineering of the active and passive structures is extensively analyzed. These structures are shown to be ideally suited for high pulsed-power optical heterodyning applications. A high-power DBR laser array is also presented for use in spectral beam combining systems. The laser structure for this application is engineered for high-power applications. The engineering of the lateral optical guiding structure as well as the surface-etched grating is discussed.

  8. High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits.

    Science.gov (United States)

    Wu, Tsung-Ta; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Hung-Chun; Hsieh, Tung-Ying; Lin, Wei-Sheng; Kao, Ming-Hsuan; Chen, Chiu-Hao; Yao, Jie-Yi; Jian, Yi-Ling; Hsu, Chiung-Chih; Lin, Kun-Lin; Shen, Chang-Hong; Chueh, Yu-Lun; Shieh, Jia-Min

    2017-05-02

    Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (Ion)/subthreshold swing (S.S.) of 181 µA/µm/107 mV/dec and 188 µA/µm/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at VDD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.

  9. Integrated capacitors for conductive lithographic film circuits

    OpenAIRE

    Harrey, PM; Evans, PSA; Harrison, DJ

    2001-01-01

    This paper reports on fabrication of low-value embedded capacitors in conductive lithographic film (CLF) circuit boards. The CLF process is a low-cost and high speed manufacturing technique for flexible circuits and systems. We report on the construction and electrical characteristics of CLF capacitor structures printed onto flexible substrates. These components comprise a single polyester dielectric layer, which separates the printed electrode films. Multilayer circuit boards with printed co...

  10. Counterfeit integrated circuits detection and avoidance

    CERN Document Server

    Tehranipoor, Mark (Mohammad); Forte, Domenic

    2015-01-01

    This timely and exhaustive study offers a much-needed examination of the scope and consequences of the electronic counterfeit trade.  The authors describe a variety of shortcomings and vulnerabilities in the electronic component supply chain, which can result in counterfeit integrated circuits (ICs).  Not only does this book provide an assessment of the current counterfeiting problems facing both the public and private sectors, it also offers practical, real-world solutions for combatting this substantial threat.   ·      Helps beginners and practitioners in the field by providing a comprehensive background on the counterfeiting problem; ·      Presents innovative taxonomies for counterfeit types, test methods, and counterfeit defects, which allows for a detailed analysis of counterfeiting and its mitigation; ·      Provides step-by-step solutions for detecting different types of counterfeit ICs; ·      Offers pragmatic and practice-oriented, realistic solutions to counterfeit IC d...

  11. Designing TSVs for 3D Integrated Circuits

    CERN Document Server

    Khan, Nauman

    2013-01-01

    This book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits.  It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks.  Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available....

  12. Ultraviolet integrated photonic circuits (Conference Presentation)

    Science.gov (United States)

    Fanto, Michael L.; Steidle, Jeffrey A.; Lu, Tsung-Ju; Preble, Stefan F.; Englund, Dirk R.; Tison, Christopher C.; Smith, Amos M.; Howland, Gregory A.; Soderberg, Kathy-Anne; Alsing, Paul M.

    2016-10-01

    Quantum information processing relies on the fundamental property of quantum interference, where the quality of the interference directly correlates to the indistinguishability of the interacting particles. The creation of these indistinguishable particles, photons in this case, has conventionally been accomplished with nonlinear crystals and optical filters to remove spectral distinguishability, albeit sacrificing the number of photons. This research describes the use of an integrated aluminum nitride microring resonator circuit to selectively generate photon pairs at the narrow cavity transmissions, thereby producing spectrally indistinguishable photons. These spectrally indistinguishable photons can then be routed through optical waveguide circuitry, concatenated interferometers, to manipulate and entangle the photons into the desired quantum states. Photon sources and circuitry are only two of the three required pieces of the puzzle. The final piece which this research is aimed at interfacing with are trapped ion quantum memories, based on trapped Ytterbium ions. These ions serve as very long lived and stable quantum memories with storage times on the order of 10's of minutes, compared with photonic quantum memories which are limited to 10-6 to 10-3 seconds. The caveat with trapped ions is the interaction wavelength of the photons is 369.5nm and therefore the goal of this research is to develop entangled photon sources and circuitry in that wavelength regime to interact directly with the trapped ions and bypass the need for frequency conversion.

  13. Securing Health Sensing Using Integrated Circuit Metric

    Directory of Open Access Journals (Sweden)

    Ruhma Tahir

    2015-10-01

    Full Text Available Convergence of technologies from several domains of computing and healthcare have aided in the creation of devices that can help health professionals in monitoring their patients remotely. An increase in networked healthcare devices has resulted in incidents related to data theft, medical identity theft and insurance fraud. In this paper, we discuss the design and implementation of a secure lightweight wearable health sensing system. The proposed system is based on an emerging security technology called Integrated Circuit Metric (ICMetric that extracts the inherent features of a device to generate a unique device identification. In this paper, we provide details of how the physical characteristics of a health sensor can be used for the generation of hardware “fingerprints”. The obtained fingerprints are used to deliver security services like authentication, confidentiality, secure admission and symmetric key generation. The generated symmetric key is used to securely communicate the health records and data of the patient. Based on experimental results and the security analysis of the proposed scheme, it is apparent that the proposed system enables high levels of security for health monitoring in resource optimized manner.

  14. Securing health sensing using integrated circuit metric.

    Science.gov (United States)

    Tahir, Ruhma; Tahir, Hasan; McDonald-Maier, Klaus

    2015-10-20

    Convergence of technologies from several domains of computing and healthcare have aided in the creation of devices that can help health professionals in monitoring their patients remotely. An increase in networked healthcare devices has resulted in incidents related to data theft, medical identity theft and insurance fraud. In this paper, we discuss the design and implementation of a secure lightweight wearable health sensing system. The proposed system is based on an emerging security technology called Integrated Circuit Metric (ICMetric) that extracts the inherent features of a device to generate a unique device identification. In this paper, we provide details of how the physical characteristics of a health sensor can be used for the generation of hardware "fingerprints". The obtained fingerprints are used to deliver security services like authentication, confidentiality, secure admission and symmetric key generation. The generated symmetric key is used to securely communicate the health records and data of the patient. Based on experimental results and the security analysis of the proposed scheme, it is apparent that the proposed system enables high levels of security for health monitoring in resource optimized manner.

  15. Design of 3D integrated circuits and systems

    CERN Document Server

    Sharma, Rohit

    2014-01-01

    Three-dimensional (3D) integration of microsystems and subsystems has become essential to the future of semiconductor technology development. 3D integration requires a greater understanding of several interconnected systems stacked over each other. While this vertical growth profoundly increases the system functionality, it also exponentially increases the design complexity. Design of 3D Integrated Circuits and Systems tackles all aspects of 3D integration, including 3D circuit and system design, new processes and simulation techniques, alternative communication schemes for 3D circuits and sys

  16. A Multi-Gigahertz Analog Transient Recorder Integrated Circuit

    CERN Document Server

    Kleinfelder, Stuart A

    2015-01-01

    A monolithic multi-channel analog transient recorder, implemented using switched capacitor sample-and-hold circuits and a high-speed analogically-adjustable delay-line-based write clock, has been designed, fabricated and tested. The 2.1 by 6.9 mm layout, in 1.2 micron CMOS, includes over 31,000 transistors and 2048 double polysilicon capacitors. The circuit contains four parallel channels, each with a 512 deep switched-capacitor sample-and-hold system. A 512 deep edge sensitive tapped active delay line uses look-ahead and 16 way interleaving to develop the 512 sample and hold clocks, each as little as 3.2 ns wide and 200 ps apart. Measurements of the device have demonstrated 5 GHz maximum sample rate, at least 350 MHz bandwidth, an extrapolated rms aperture uncertainty per sample of 0.7 ps, and a signal to rms noise ratio of 2000:1.

  17. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  18. Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry

    Directory of Open Access Journals (Sweden)

    Gabriel Vidal-Álvarez

    2016-03-01

    Full Text Available We present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel. The suspended microbridge resonator is electrostatically actuated, capacitively sensed, and monolithically integrated with complementary metal-oxide-semiconductor (CMOS readout circuitry. The device is fabricated using the back end of line (BEOL layers of the AMS 0.35 μm commercial CMOS technology, interconnecting two metal layers with a contact layer. The fabricated device has a 6 fL capacity and has one of the smallest embedded channels so far. It is able to attain a mass sensitivity of 25 ag/Hz using a fully integrable electrical transduction.

  19. Monolithically Integrated Reconfigurable Filters for Microwave Photonic Links

    Science.gov (United States)

    Norberg, Erik J.

    For the purposes of commercial communication and military electronic warfare and radar alike, there is an increasing interest in RF systems that can handle very wide instantaneous bandwidths at high center frequencies. Optical signal processing has the capability to reduce latency, improve size, weight and power (SwAP) performance, and overcome the inherent bandwidth limitations of electronic counterparts. By rapidly pre-filtering wide bandwidth microwave signals in the optical domain, the analog-to-digital conversion (ADC) and subsequent digital signal processing (DSP) can be significantly relieved. Compared to channelizing and add/drop filters for wavelength division multiplexing (WDM) applications, the microwave filter application is much more challenging as it requires a more versatile filter, ideally with tunability in both frequency and bandwidth. In this work such a filter was developed using integrated photonics. By integrating the filter on a single InP chip, the stability required for coherent filtering is met, while the active integration platform offers a flexible filter design and higher tolerance in the coupler and fabrication specifications. Using an entirely deep etched fabrication with a single blanket regrowth, a simple fabrication with high yield is achieved. The reconfigurable filter is designed as an array of uncoupled filter stages with each filter stage reconfigurable as a filter pole or zero with arbitrary magnitude and phase. This gives rise to a flexible ffilter synthesis, much like an optical version of DSP filters. Flat-topped bandpass filters are demonstrated with frequency tunability over 30 GHz, bandwidth adjustable between 1.9 and 5.4 GHz, and stopband rejection >32 dB. In order to meet the stringent spurious-free dynamic range (SFDR) requirements of the microwave application, a novel epitaxial layer integration platform is developed. Optimized for high optical saturation power and low propagation loss, it produces semiconductor

  20. F-Paris: integrated electronic circuits [Tender

    CERN Multimedia

    2003-01-01

    "Fourniture, montage et tests des circuits imprimes et modules multi composants pour le trajectographe central de CMS. Maximum de 12 000 circuits imprimes et modules multi-composants necessaires au trajectographe central de l'experience CMS aupres du Large Hadron Collider" (1 page).

  1. Parallel sparse direct solver for integrated circuit simulation

    CERN Document Server

    Chen, Xiaoming; Yang, Huazhong

    2017-01-01

    This book describes algorithmic methods and parallelization techniques to design a parallel sparse direct solver which is specifically targeted at integrated circuit simulation problems. The authors describe a complete flow and detailed parallel algorithms of the sparse direct solver. They also show how to improve the performance by simple but effective numerical techniques. The sparse direct solver techniques described can be applied to any SPICE-like integrated circuit simulator and have been proven to be high-performance in actual circuit simulation. Readers will benefit from the state-of-the-art parallel integrated circuit simulation techniques described in this book, especially the latest parallel sparse matrix solution techniques. · Introduces complicated algorithms of sparse linear solvers, using concise principles and simple examples, without complex theory or lengthy derivations; · Describes a parallel sparse direct solver that can be adopted to accelerate any SPICE-like integrated circuit simulato...

  2. Photonic integrated circuits based on quantum well intermixing techniques

    OpenAIRE

    Hou, Lianping; Marsh, John H.

    2016-01-01

    The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the bandgap in selected areas of an integrated device post-growth. To verify the QWI process, we have fab...

  3. Photonic Integrated Circuits Based on Quantum well Intermixing Techniques

    OpenAIRE

    Hou, Lianping; John H. Marsh

    2016-01-01

    The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the bandgap in selected areas of an integrated device post-growth. To verify the QWI process, we have fab...

  4. Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

    Science.gov (United States)

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

    2011-12-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

  5. Novel electroabsorption modulator monolithically integrated with spot-size converter

    Institute of Scientific and Technical Information of China (English)

    Lianping Hou; Wei Wang; Hongliang Zhu

    2005-01-01

    @@ A novel 1.55-μm spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100μm) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2° and 13.0°, respectively.

  6. Novel electroabsorption modulator monolithically integrated with spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang

    2005-01-01

    A novel 1.55-?m spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100 ?m) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2 deg. and 13.0 deg., respectively.

  7. Development and fabrication of monolithically integrated optical packet switches

    Science.gov (United States)

    Yanson, Dan A.; Silver, Mark; Vassalli, Omar; Campbell, Margaret; Masterton, Graeme; McDougall, Stewart D.; Marsh, John H.

    2007-02-01

    We report development activities towards realization of fully integrated 1x2, 2x2, and 4x4 cross-point optical switches for WDM-packet-based data networking. Two enabling technologies, quantum-well intermixing and etched turning mirrors, are developed and demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 μm. We describe the use of both technologies to fabricate switch chips with different port counts.

  8. Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

    Science.gov (United States)

    Sato, Kenji; Wakita, Koichi; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo; Takada, Atsushi

    1994-07-01

    Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.

  9. W-band monolithic oscillator using InAlAs/InGaAs HEMT

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.; Tutt, M.; Ng, G. I.; Lai, R.

    1990-01-01

    A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.

  10. Waveguide photon-number-resolving detectors for quantum photonic integrated circuits

    CERN Document Server

    Sahin, D; Zhou, Z; Jahanmirinejad, S; Mattioli, F; Leoni, R; Beetz, J; Lermer, M; Kamp, M; Höfling, S; Fiore, A

    2013-01-01

    Quantum photonic integration circuits are a promising approach to scalable quantum processing with photons. Waveguide single-photon-detectors (WSPDs) based on superconducting nanowires have been recently shown to be compatible with single-photon sources for a monolithic integration. While standard WSPDs offer single-photon sensitivity, more complex superconducting nanowire structures can be configured to have photon-number-resolving capability. In this work, we present waveguide photon-number-resolving detectors (WPNRDs) on GaAs/Al0.75Ga0.25As ridge waveguides based on a series connection of nanowires. The detection of 0-4 photons has been demonstrated with a four-wire WPNRD, having a single electrical read-out. A device quantum efficiency ~24 % is reported at 1310 nm for the TE polarization.

  11. Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang, E-mail: oxgchen@illinois.edu [Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801 (United States)

    2015-07-20

    We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

  12. The role of monolithic integration in advanced laser products

    Science.gov (United States)

    Marsh, John H.

    2006-02-01

    The design and performance of single-mode high-power (>100 mW) semiconductor lasers suitable for integration into large arrays are reported. In 830 nm lasers, quantum well intermixing (QWI) has been used to increase the bandgap of the waveguide in the facet region by 120 meV, and the catastrophic optical damage threshold of uncoated devices increased by a factor of >3 as a result. The passive waveguides are relatively cool, bringing high reliability, improving the single-mode waveguide stability and enabling high-temperature operation. Furthermore, the passive waveguides relax the cleaving and packaging alignment tolerances, giving a high yield process suitable for manufacture. A far-field reduction layer is included in the lasers giving a fast axis divergence of <20° FWHM. Arrays in which each emitter operates at several 100 mW, have excellent uniformity of laser parameters such as kink power, operating power and optical beam profile.

  13. Diamond as a material for monolithically integrated optical and optomechanical devices

    CERN Document Server

    Rath, Patrik; Nebel, Christoph; Pernice, Wolfram H P

    2016-01-01

    Diamond provides superior optical and mechanical material properties, making it a prime candidate for the realization of integrated optomechanical circuits. Because diamond sub- strates have matured in size, efficient nanostructuring methods can be used to realize full-scale integrated devices. Here we review optical and mechanical resonators fab- ricated from polycrystalline as well as single crystalline diamond. We present relevant material properties with respect to implementing optomechanical devices and compare them with other material systems. We give an overview of diamond integrated optomechanical circuits and present the optical readout mechanism and the actuation via optical or electrostatic forces that have been implemented to date. By combining diamond nanophotonic circuits with superconducting nanowires single photons can be efficiently detected on such chips and we outline how future single photon optomechanical circuits can be realized on this platform.

  14. Femtosecond laser fabrication of monolithically integrated microfluidic sensors in glass.

    Science.gov (United States)

    He, Fei; Liao, Yang; Lin, Jintian; Song, Jiangxin; Qiao, Lingling; Cheng, Ya; Sugioka, Koji

    2014-10-17

    Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D) structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  15. Femtosecond Laser Fabrication of Monolithically Integrated Microfluidic Sensors in Glass

    Directory of Open Access Journals (Sweden)

    Fei He

    2014-10-01

    Full Text Available Femtosecond lasers have revolutionized the processing of materials, since their ultrashort pulse width and extremely high peak intensity allows high-quality micro- and nanofabrication of three-dimensional (3D structures. This unique capability opens up a new route for fabrication of microfluidic sensors for biochemical applications. The present paper presents a comprehensive review of recent advancements in femtosecond laser processing of glass for a variety of microfluidic sensor applications. These include 3D integration of micro-/nanofluidic, optofluidic, electrofluidic, surface-enhanced Raman-scattering devices, in addition to fabrication of devices for microfluidic bioassays and lab-on-fiber sensors. This paper describes the unique characteristics of femtosecond laser processing and the basic concepts involved in femtosecond laser direct writing. Advanced spatiotemporal beam shaping methods are also discussed. Typical examples of microfluidic sensors fabricated using femtosecond lasers are then highlighted, and their applications in chemical and biological sensing are described. Finally, a summary of the technology is given and the outlook for further developments in this field is considered.

  16. Hybridization of detector array and integrated circuit for readout

    Science.gov (United States)

    Fossum, Eric R.; Grunthaner, Frank J.

    1992-04-01

    A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

  17. On ageing effects in analogue integrated circuits

    OpenAIRE

    Salfelder, Felix (Dipl. Math.)

    2016-01-01

    The behaviour of electronic circuits is influenced by ageing effects. Modelling the behaviour of circuits is a standard approach for the design of faster, smaller, more reliable and more robust systems. In this thesis, we propose a formalization of robustness that is derived from a failure model, which is based purely on the behavioural specification of a system. For a given specification, simulation can reveal if a system does not comply with a specification, and thus provide a failure model...

  18. 76 FR 76434 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions...

    Science.gov (United States)

    2011-12-07

    ... COMMISSION Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions, Receipt... Commission has received a complaint entitled In Re Certain Integrated Circuits, Chipsets, And Products... importation of certain integrated circuits, chipsets, and products containing same including televisions....

  19. Multi-channel monolithic integrated optic fiber Bragg grating sensor interrogator

    Science.gov (United States)

    Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Zongjian

    2011-09-01

    Fiber Bragg grating (FBG) is a mature sensing technology for the measurement of strain, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion. It has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. The most prominent advantages of FBG are: small size and light weight, distributed array of FBG transducers on a single fiber, and immunity to radio frequency interference. However, a major disadvantage of FBG technology is that conventional state-of-the-art FBG interrogation system is typically bulky, heavy, and costly bench top instruments that are typically assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the industrial need for a compact FBG interrogation system, this paper describes recent progress towards the development of miniature fiber Bragg grating sensor interrogator (FBG-Transceiver™) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables monolithic integration of all functionalities, both passive and active, of conventional bench top FBG sensor interrogator system, packaged in a miniaturized, low power operation, 2 cm×5 cm small form factor (SFF) package suitable for long-term structural health monitoring in applications where size, weight, and power are critical for operation.

  20. Four Quadrant Chopper Drive with Specialized Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Alexandru Morar

    2009-12-01

    Full Text Available The paper presents a high performance system for separately-excited D.C. motor control, which was designed and performed with a specialized integrated circuit (L292, made by SGS-THOMSON Microelectronics Company. With an interface and an adequate software, L292 circuit can be used as a chopper in 2 or 4 quadrant.

  1. Four Quadrant Chopper Drive with Specialized Integrated Circuits

    OpenAIRE

    Alexandru Morar

    2009-01-01

    The paper presents a high performance system for separately-excited D.C. motor control, which was designed and performed with a specialized integrated circuit (L292), made by SGS-THOMSON Microelectronics Company. With an interface and an adequate software, L292 circuit can be used as a chopper in 2 or 4 quadrant.

  2. 35 GHz integrated circuit rectifying antenna with 33 percent efficiency

    Science.gov (United States)

    Yoo, T.-W.; Chang, K.

    1991-01-01

    A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

  3. Two-dimensional hydrodynamic flow focusing in a microfluidic platform featuring a monolithic integrated glass micronozzle

    Science.gov (United States)

    Liu, Yifan; Shen, Yusheng; Duan, Lian; Yobas, Levent

    2016-10-01

    Two-dimensional hydrodynamic flow focusing is demonstrated through a microfluidic device featuring a monolithic integrated glass micronozzle inside a flow-focusing geometry. Such a coaxial configuration allows simple one-step focusing of a sample fluid stream, jetted from the micronozzle tip, in both in-plane and out-of-plane directions. The width of the focused filament can be precisely controlled and further scaled down to the submicrometer regime to facilitate rapid hydrodynamic mixing. Fluorescence quenching experiments reveal ultra-fast microsecond mixing of the denaturant into the focused filament. This device offers new possibilities to a set of applications such as the study of protein folding kinetics.

  4. A 1.55-μm laser array monolithically integrated with an MMI combiner

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Zhu Hongliang; Liang Song; Wang Baojun; Zhang Can; Zhao Lingjuan; Bian Jing

    2013-01-01

    The monolithic integration of four 1.55-μm range InGaAsP/InP distributed feedback lasers with a 4 × 1multimode-interference (MMI) optical combiner using the varied width ridge method is proposed and demonstrated.The average output power is 1.5 mW when the current of LD is 100 mA and the threshold current is 30-35 mA at 25 ℃.The lasing wavelength is 1.55-μm range and 40 dB sidemode suppression ratio is obtained.The four channels can operate separately or simultaneously.

  5. 2R-regeneration in a monolithically integrated four-section SOA-EA chip

    DEFF Research Database (Denmark)

    Vivero, Tania; Calabretta, Nicola; Tafur Monroy, Idelfonso

    2009-01-01

    are measured. Results show that by cascading two-pairs of SOA–EAs a steep static transfer function is achieved. Dynamical measurements show large improvements in extinction ratio as well as a large improvement in the receiver-sensitivity when used as a regenerator for NRZ signals at 10 Gb/s.......Optical regeneration using a monolithically integrated chip formed by a cascade of semiconductor optical amplifiers and saturable absorbers is investigated. Static transfer functions, signal reshaping, extinction ratio enhancement, noise dynamics and device dependence on operation conditions...

  6. Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step

    OpenAIRE

    Hofstetter, Daniel; Zappe, H. P.; Epler, J. E.; van Riel, P

    2008-01-01

    The monolithic integration of a GaAs-AlGaAs distributed Bragg reflector (DBR) laser with a nonabsorbing grating section, a transparent waveguide, and an absorbing photodetector is reported. Transparent and absorbing segments were defined after growth by vacancy-enhanced quantum-well disordering (VED). Laser output power was 5 mW with a threshold current of 22 mA. Detector current was linearly dependent on the laser output power and the emission from the grating side of the laser could be dire...

  7. Monolithically Integrated, Mechanically Resilient Carbon-Based Probes for Scanning Probe Microscopy

    Science.gov (United States)

    Kaul, Anupama B.; Megerian, Krikor G.; Jennings, Andrew T.; Greer, Julia R.

    2010-01-01

    Scanning probe microscopy (SPM) is an important tool for performing measurements at the nanoscale in imaging bacteria or proteins in biology, as well as in the electronics industry. An essential element of SPM is a sharp, stable tip that possesses a small radius of curvature to enhance spatial resolution. Existing techniques for forming such tips are not ideal. High-aspect-ratio, monolithically integrated, as-grown carbon nanofibers (CNFs) have been formed that show promise for SPM applications by overcoming the limitations present in wet chemical and separate substrate etching processes.

  8. Highly efficient coupling between a monolithically integrated photonic crystal cavity and a bus waveguide

    Science.gov (United States)

    Debnath, Kapil; Welna, Karl; Ferrera, Marcello; Deasy, Kieran; Lidzey, David; Krauss, Thomas F.; O'Faolain, Liam

    2012-01-01

    We experimentally demonstrate a new optical filter design comprising of a photonic crystal cavity and a low index bus waveguide which are monolithically integrated on a silicon-on-insulator (SOI) platform. We have fabricated oxide clad PhC cavities with a silicon nitride waveguide positioned directly above, such that there is an overlap between the evanescent tails of the two modes. We have realised an extinction ratio of 7.5dB for cavities with total Q of 50,000.

  9. Integrated MMIC for Phase-Locked Oscillators and Frequency Synthesizers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Microwave Monolithic Integrated Circuits (MMIC) provide the technology base for miniaturization of microwave payloads in spacecraft. While MMIC chips are widely...

  10. A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission

    Science.gov (United States)

    Zhang, Zhang; Ye, Tan; Jianmin, Zeng; Xu, Han; Xin, Cheng; Guangjun, Xie

    2016-09-01

    A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission is presented. Data and power are transmitted to the stimulator by mutual inductance coupling, while the in-vitro controller encodes the stimulation parameters. The stimulator integrates the digital control module and can generate the bipolar current with equal amplitude in four channels. In order to reduce power consumption, a novel controlled threshold voltage cancellation rectifier is proposed in this paper to provide the supply voltage of the stimulator. The monolithic stimulator was fabricated in a SMIC 0.18 μm 1-poly 6-metal mixed-signal CMOS process, occupying 0.23 mm2, and consumes 180 μW on average. Compared with previously published stimulators, this design has advantages of large stimulated current (0-0.8 mA) with the double low-voltage supply (1.8 and 3.3 V), and high-level integration. Project supported by the National Natural Science Foundation of China (Nos. 61404043, 61401137), the Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Nos. IIMDKFJJ-13-06, IIMDKFJJ-14-03), and the Fundamental Research Funds for the Central Universities (No. 2015HGZX0026).

  11. Radiation-hardened transistor and integrated circuit

    Science.gov (United States)

    Ma, Kwok K.

    2007-11-20

    A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

  12. Modeling and design of a monolithically integrated power converter on SiC

    Science.gov (United States)

    Yu, L. C.; Sheng, K.; Zhao, J. H.

    2008-10-01

    To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.

  13. Isolation of Battery Chargers Integrated Into Printed Circuit Boards

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-11-21

    Present test procedures developed by the Federal Government (10 CFR Part 430 “Energy Conservation Program for Consumer Products”) to measure the energy consumption of battery chargers provide no method for the isolation of input power for battery chargers that have been integrated into printed circuit boards internal to electronic equipment. This prevents the measurement of Standby and Off Mode energy consumption. As a result, the energy consumption of battery chargers integrated into the printed circuit board cannot be measured.

  14. Addressable-Matrix Integrated-Circuit Test Structure

    Science.gov (United States)

    Sayah, Hoshyar R.; Buehler, Martin G.

    1991-01-01

    Method of quality control based on use of row- and column-addressable test structure speeds collection of data on widths of resistor lines and coverage of steps in integrated circuits. By use of straightforward mathematical model, line widths and step coverages deduced from measurements of electrical resistances in each of various combinations of lines, steps, and bridges addressable in test structure. Intended for use in evaluating processes and equipment used in manufacture of application-specific integrated circuits.

  15. Analog integrated circuits design for processing physiological signals.

    Science.gov (United States)

    Li, Yan; Poon, Carmen C Y; Zhang, Yuan-Ting

    2010-01-01

    Analog integrated circuits (ICs) designed for processing physiological signals are important building blocks of wearable and implantable medical devices used for health monitoring or restoring lost body functions. Due to the nature of physiological signals and the corresponding application scenarios, the ICs designed for these applications should have low power consumption, low cutoff frequency, and low input-referred noise. In this paper, techniques for designing the analog front-end circuits with these three characteristics will be reviewed, including subthreshold circuits, bulk-driven MOSFETs, floating gate MOSFETs, and log-domain circuits to reduce power consumption; methods for designing fully integrated low cutoff frequency circuits; as well as chopper stabilization (CHS) and other techniques that can be used to achieve a high signal-to-noise performance. Novel applications using these techniques will also be discussed.

  16. Multilayer microwave integrated quantum circuits for scalable quantum computing

    Science.gov (United States)

    Brecht, Teresa; Pfaff, Wolfgang; Wang, Chen; Chu, Yiwen; Frunzio, Luigi; Devoret, Michel H.; Schoelkopf, Robert J.

    2016-02-01

    As experimental quantum information processing (QIP) rapidly advances, an emerging challenge is to design a scalable architecture that combines various quantum elements into a complex device without compromising their performance. In particular, superconducting quantum circuits have successfully demonstrated many of the requirements for quantum computing, including coherence levels that approach the thresholds for scaling. However, it remains challenging to couple a large number of circuit components through controllable channels while suppressing any other interactions. We propose a hardware platform intended to address these challenges, which combines the advantages of integrated circuit fabrication and the long coherence times achievable in three-dimensional circuit quantum electrodynamics. This multilayer microwave integrated quantum circuit platform provides a path towards the realisation of increasingly complex superconducting devices in pursuit of a scalable quantum computer.

  17. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  18. Secondary Side CMOS Feedback Control Integrated Circuit

    Science.gov (United States)

    1990-06-01

    Temperature ( Celc ~us) Figure 5.1: Experimental Temperature Dependence cf Untrimmed Bandgap Circuit 104 1. I I ’ - ’ 0 0.9 . -0-0 Ouput Voit -ge ---.o M...Schlecht and L.F. Casey, "Comparison of the Square-Wave and Quasi- Resonant Topologies," IEEE PESC Record, 1987, pp. 124-134. 132

  19. Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing; Wang, Wei

    2005-09-01

    We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0° × 12.6°, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  20. Semiconductor optical amplifier monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converters

    Science.gov (United States)

    Hou, Lianping; Zhu, Hongliang; Wang, Baojun; Zhou, Fan; Wang, Lufeng; Bian, Jing; Wang, Wei

    2005-09-01

    We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) were incorporated. Such combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550~1600nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0°×12.6°, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber.

  1. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  2. Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots.

    Science.gov (United States)

    Zhang, Yang; Chen, Yan; Mietschke, Michael; Zhang, Long; Yuan, Feifei; Abel, Stefan; Hühne, Ruben; Nielsch, Kornelius; Fompeyrine, Jean; Ding, Fei; Schmidt, Oliver G

    2016-09-14

    Elastic strain fields based on single crystal piezoelectric elements represent an effective way for engineering the quantum dot (QD) emission with unrivaled precision and technological relevance. However, pioneering researches in this direction were mainly based on bulk piezoelectric substrates, which prevent the development of chip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitaxial PMN-PT thin films have been grown on SrTiO3 buffered Si and show excellent piezoelectric responses. Dense arrays of MEMS with small footprints are then fabricated based on these films, forming an on-chip strain tuning platform. After transferring the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.

  3. Integrated Circuit Electromagnetic Susceptibility Handbook. Phase III

    Science.gov (United States)

    1978-08-01

    LO.WS S* i •C SUCEWPTI3LITY HANDBOOK REPORT MD( E1929 I AUGUST Isis of the offset generator is as shown, while if the input transistors are PNP type...comparator input. If the input transistors are PNP type (as in 311 type comparators), the offset generator I! has the opposite polarity. The magnitude of the...Rectification in PN Junctions ... . . ........... 58 5.2 Interference in Transistors ........... ..... ..... ... 63 5.3 Computer-Aided Analysis of Circuit

  4. Integrating Neural Circuits Controlling Female Sexual Behavior

    Science.gov (United States)

    Micevych, Paul E.; Meisel, Robert L.

    2017-01-01

    The hypothalamus is most often associated with innate behaviors such as is hunger, thirst and sex. While the expression of these behaviors important for survival of the individual or the species is nested within the hypothalamus, the desire (i.e., motivation) for them is centered within the mesolimbic reward circuitry. In this review, we will use female sexual behavior as a model to examine the interaction of these circuits. We will examine the evidence for a hypothalamic circuit that regulates consummatory aspects of reproductive behavior, i.e., lordosis behavior, a measure of sexual receptivity that involves estradiol membrane-initiated signaling in the arcuate nucleus (ARH), activating β-endorphin projections to the medial preoptic nucleus (MPN), which in turn modulate ventromedial hypothalamic nucleus (VMH) activity—the common output from the hypothalamus. Estradiol modulates not only a series of neuropeptides, transmitters and receptors but induces dendritic spines that are for estrogenic induction of lordosis behavior. Simultaneously, in the nucleus accumbens of the mesolimbic system, the mating experience produces long term changes in dopamine signaling and structure. Sexual experience sensitizes the response of nucleus accumbens neurons to dopamine signaling through the induction of a long lasting early immediate gene. While estrogen alone increases spines in the ARH, sexual experience increases dendritic spine density in the nucleus accumbens. These two circuits appear to converge onto the medial preoptic area where there is a reciprocal influence of motivational circuits on consummatory behavior and vice versa. While it has not been formally demonstrated in the human, such circuitry is generally highly conserved and thus, understanding the anatomy, neurochemistry and physiology can provide useful insight into the motivation for sexual behavior and other innate behaviors in humans. PMID:28642689

  5. Innovative devices for integrated circuits - A design perspective

    Science.gov (United States)

    Schmitt-Landsiedel, D.; Werner, C.

    2009-04-01

    MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyond CMOS we discuss circuits with Tunneling Field Effect Transistors and their combination with classical MOSFETs and MuGFETs. Finally the potential of more substantial paradigm changes in circuit design will be exploited for the example of magnetic quantum cellular automata using a novel integrated magnetic field clocking scheme.

  6. Study of CMOS integrated signal processing circuit in capacitive sensors

    Institute of Scientific and Technical Information of China (English)

    CAO Yi-jiang; YU Xiang; WANG Lei

    2007-01-01

    A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output voltage's frequency. The whole circuit is designed with 1.5 μm P-well CMOS process and simulated by PSpice software.Output frequency varies from 261.05 kHz to 47.93 kHz if capacitance varies in the range of 1PF~15PF. And the variation of frequency can be easily detected using counter or SCU.

  7. Multi-channel detector readout method and integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Moses, William W.; Beuville, Eric; Pedrali-Noy, Marzio

    2004-05-18

    An integrated circuit which provides multi-channel detector readout from a detector array. The circuit receives multiple signals from the elements of a detector array and compares the sampled amplitudes of these signals against a noise-floor threshold and against one another. A digital signal is generated which corresponds to the location of the highest of these signal amplitudes which exceeds the noise floor threshold. The digital signal is received by a multiplexing circuit which outputs an analog signal corresponding the highest of the input signal amplitudes. In addition a digital control section provides for programmatic control of the multiplexer circuit, amplifier gain, amplifier reset, masking selection, and test circuit functionality on each input thereof.

  8. Multi-channel detector readout method and integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Moses, William W.; Beuville, Eric; Pedrali-Noy, Marzio

    2006-12-12

    An integrated circuit which provides multi-channel detector readout from a detector array. The circuit receives multiple signals from the elements of a detector array and compares the sampled amplitudes of these signals against a noise-floor threshold and against one another. A digital signal is generated which corresponds to the location of the highest of these signal amplitudes which exceeds the noise floor threshold. The digital signal is received by a multiplexing circuit which outputs an analog signal corresponding the highest of the input signal amplitudes. In addition a digital control section provides for programmatic control of the multiplexer circuit, amplifier gain, amplifier reset, masking selection, and test circuit functionality on each input thereof.

  9. Multiport InP monolithically integrated all-optical wavelength router.

    Science.gov (United States)

    Zheng, Xiu; Raz, Oded; Calabretta, Nicola; Zhao, Dan; Lu, Rongguo; Liu, Yong

    2016-08-15

    An indium phosphide-based monolithically integrated wavelength router is demonstrated in this Letter. The wavelength router has four input ports and four output ports, which integrate four wavelength converters and a 4×4 arrayed-waveguide grating router. Each wavelength converter is achieved based on cross-gain modulation and cross-phase modulation effects in a semiconductor optical amplifier. Error-free wavelength switching for a non-return-to-zero 231-1 ps eudorandom binary sequence at 40 Gb/s data rate is performed. Both 1×4 and 3×1 all-optical routing functions of this chip are demonstrated for the first time with power penalties as low as 3.2 dB.

  10. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  11. A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver

    Science.gov (United States)

    Cui, Hailin; Zhou, Shouli; Huang, Hui; Huang, Yongqing; Ren, Xiaomin

    2005-11-01

    Adding resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver is described. Between the InP buffer and device epitaxial structure, InP/InGaAsP quarter wavelength stack (QWS) are used to form DBR (Distributed Bragg Reflectors) mirror. The PIN-PD is integrated within a Fabry-Perot cavity and the incident light is reflected many times by the Fabry-Perot cavity and consequently absorbed many times by the absorption layer. Therefore, the quantum efficiency of this detector is enlarged, meanwhile other performances such as frequency response are not influenced. We discuss the method to fabricate the resonance cavity, make theory simulation, optimize design on it, and analyze the advantage of this device.

  12. Monolithically integrated reconfigurable add-drop multiplexer for mode-division-multiplexing systems.

    Science.gov (United States)

    Wang, Shipeng; Wu, Hao; Tsang, Hon Ki; Dai, Daoxin

    2016-11-15

    An integrated reconfigurable optical add-drop multiplexer (ROADM) for mode-division-multiplexing systems is proposed and demonstrated for the first time, to the best of our knowledge. The present ROADM with four mode-channels is composed of a four-channel mode demultiplexer, four identical 2×2 thermo-optic Mach-Zehnder switches (MZSs), and a four-channel mode multiplexer, which are integrated monolithically on silicon. All the devices are designed for operation with TM polarization. The ROADM can add/drop any one of the mode channels freely by thermally turning on/off the corresponding MZS. For the added/dropped mode-channels, the excess loss is 1-5 dB, and the extinction ratio is 15-20 dB in the wavelength range of 1535-1565 nm.

  13. Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

    Science.gov (United States)

    Zhao, Q.; Pan, J. Q.; Zhang, J.; Li, B. X.; Zhou, F.; Wang, B. J.; Wang, L. F.; Bian, J.; Zhao, L. J.; Wang, W.

    2006-04-01

    A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10-10 is confirmed.

  14. Monolithically integrated 4x4 SOA switch fabricated using quantum well intermixing

    Science.gov (United States)

    Millett, Ronald; Hinzer, Karin; Hall, Trevor; Poirier, Maxime; Schriemer, Henry

    2009-02-01

    Monolithically-integrated semiconductor optical amplifiers (SOAs) have the potential for enabling high-speed and low-crosstalk optical switches in reconfigurable optical add-drop multiplexers (ROADMs). Using integrated 4x4 switches as the building blocks for large-scale ROADMs, instead of 2x2 switches, will reduce alignment issues and assembly steps during manufacturing. The switch is based on SOAs, quantum well intermixed (QWI) passive 1x4 MMI splitters/combiners, and total internal reflection mirrors. We present the results of the 4x4 switch design, for a switch of 5.3 mm x 3.5 mm in size, with estimated total excess on-chip losses of 23 dB.

  15. Science Letters:The Moore's Law for photonic integrated circuits

    Institute of Scientific and Technical Information of China (English)

    THYL(E)N L.; HE Sai-ling; WOSINSKI L.; DAI Dao-xin

    2006-01-01

    We formulate a "Moore's law" for photonic integrated circuits (PICs) and their spatial integration density using two methods. One is decomposing the integrated photonics devices of diverse types into equivalent basic elements, which makes a comparison with the generic elements of electronic integrated circuits more meaningful. The other is making a complex component equivalent to a series of basic elements of the same functionality, which is used to calculate the integration density for functional components realized with different structures. The results serve as a benchmark of the evolution of PICs and we can conclude that the density of integration measured in this way roughly increases by a factor of 2 per year. The prospects for a continued increase of spatial integration density are discussed.

  16. Micro-relay technology for energy-efficient integrated circuits

    CERN Document Server

    Kam, Hei

    2015-01-01

    This book describes the design of relay-based circuit systems from device fabrication to circuit micro-architectures. This book is ideal for both device engineers as well as circuit system designers and highlights the importance of co-design across design hierarchies when optimizing system performance (in this case, energy-efficiency). This book is ideal for researchers and engineers focused on semiconductors, integrated circuits, and energy efficient electronics. This book also: ·         Covers microsystem fabrication, MEMS device design, circuit design, circuit micro-architecture, and CAD ·         Describes work previously done in the field and also lays the groundwork and criteria for future energy-efficient device and system design ·         Maximizes reader insights into the design and modeling of micro-relay, micro-relay reliability, integrated circuit design with micro-relays, and more

  17. Optical 40 GHz pulse source module based on a monolithically integrated mode locked DBR laser

    Science.gov (United States)

    Huettl, B.; Kaiser, R.; Kroh, M.; Schubert, C.; Jacumeit, G.; Heidrich, H.

    2005-11-01

    In this paper the performance characteristics of compact optical 40 GHz pulse laser modules consisting of a monolithic mode-locked MQW DBR laser on GaInAsP/InP are reported. The monolithic devices were fabricated as tunable multi-section buried heterostructure lasers. A DBR grating is integrated at the output port of an extended cavity in order to meet the standardized ITU wavelength channels allocated in the spectral window around 1.55 μm in optical high speed communication networks. The fabricated 40 GHz lasers modules not only emit short optical pulses (< 1.5 ps) with very low amplitude noise (<1.5 %) and phase noise levels (timing jitter: 50 fs) but also enable good pulse-to-pulse phase and long-term stability. A wavelength tuning range of 6 nm is possible and large locking bandwidths between 100 ... 260 MHz are observed. All data have been achieved by operating the lasers in a hybrid mode-locking scheme with a required minimum micro-wave power of only 12 dBm for pulse synchronization. Details on laser chip architecture and module performance are summarized and the results of a stable and error free module performance in first 160 Gb/s (4 x 40 Gb/s OTDM) RZ-DPSK transmission experiments are presented.

  18. Novel paradigm for integrated photonics circuits: transient interconnection network

    Science.gov (United States)

    Fazio, Eugenio; Belardini, Alessandro; Bastiani, Lorenzo; Alonzo, Massimo; Chauvet, Mathieu; Zheludev, Nikolay I.; Soci, Cesare

    2017-01-01

    Self-confined beams and spatial solitons were always investigated for a purely academic point of view, describing their formation and cross-interaction. We propose a novel paradigm for integrated photonics circuits based on self-confined interconnections. We consider that circuits are not designed since beginning; a network of writing lasers provide the circuit configuration inside which information at a different wavelength travels. we propose new designs for interconnections and both digital and analog switching gates somehow inspired by Nature, following analog decision routes used in biological networks like brain synapsis or animal path finding.

  19. Hybrid CMOS/Nanodevice Integrated Circuits Design and Fabrication

    Science.gov (United States)

    2008-08-25

    This approach combines a semiconductor transistor system with a nanowire crossbar, with simple two-terminal nanodevices self-assembled at each...hybrid CMOS/nanodevice integrated circuits [10-12]. Such circuit combines a semiconductor transistors system with a nanowire crossbar, with simple two...both with and without embedded metallic clusters), self-assembled molecular monolayers, and thin chalcogenide and crystalline perovskite layers [20

  20. Scalable Testing Platform for CMOS Read In Integrated Circuits

    Science.gov (United States)

    2016-03-31

    Distribution A Approved for Public Release – Distribution is unlimited Scalable Testing Platform for CMOS Read-In Integrated Circuits Miguel...research group. This paper describes a single scalable testing platform (STP) capable of testing all of our RIICs. This approach reduces the design...time and risk associated with RIIC testing . On the hardware side, our platform consists of several custom printed circuit boards. On the software

  1. Advances in organic field-effect transistors and integrated circuits

    Institute of Scientific and Technical Information of China (English)

    WANG Hong; JI ZhuoYu; LIU Ming; SHANG LiWei; LIU Ge; LIU XingHua; LIU Jiang; PENG YingQuan

    2009-01-01

    Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years.In this article we intro-duce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress.Finally, the prospects and problems of OFETs are discussed.

  2. Advances in organic field-effect transistors and integrated circuits

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years. In this article we introduce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress. Finally, the prospects and problems of OFETs are discussed.

  3. Dielectric isolation for power integrated circuits; Isolation dielectrique enterree pour les circuits integres de puissance

    Energy Technology Data Exchange (ETDEWEB)

    Zerrouk, D.

    1997-07-18

    Considerable efforts have been recently directed towards integrating onto the same chip, sense or protection elements that is low voltage analog and/or digital control circuitry together with high voltage/high current devices. Most of these so called `smart power` devices use either self isolation, junction isolation or Silicon-On-Insulator (SOI) to integrate low voltage elements with vertical power devices. Dielectric isolation is superior to the other isolation techniques such as self isolation or junction isolation. Thesis work consists of the study of the feasibility of a dielectric technology based on the melting and the solidification in a Rapid Thermal Processing furnace (RTP), of thick polysilicon films deposited on oxide. The purpose of this technique is to obtain substrate with localized SOI structures for smart power applications. SOI technology offers significant potential advantages, such as non-occurrence of latch-up in CMOS structures, high packaging density, low parasitic capacitance and the possibility of 3D structures. In addition, SOI technology using thick silicon films (10-100 {mu}m) offers special advantages for high voltage integrated circuits. Several techniques have been developed to form SOI films. Zone melting recrystallization is one of the most promising for localized SOI. The SOI structures have first been analyzed in term of extended defects. N-channel MOSFET`s transistors have also been fabricated in the SOI substrates and electrically characterized (threshold voltages, off-state leakage current, mobilities,...). The SOI transistors exhibit good characteristics, although inferior to witness transistors. The recrystallized silicon films are therefore found to be suitable for the fabrication of SOI devices. (author) 106 refs.

  4. Process Variations and Probabilistic Integrated Circuit Design

    CERN Document Server

    Haase, Joachim

    2012-01-01

    Uncertainty in key parameters within a chip and between different chips in the deep sub micron era plays a more and more important role. As a result, manufacturing process spreads need to be considered during the design process.  Quantitative methodology is needed to ensure faultless functionality, despite existing process variations within given bounds, during product development.   This book presents the technological, physical, and mathematical fundamentals for a design paradigm shift, from a deterministic process to a probability-orientated design process for microelectronic circuits.  Readers will learn to evaluate the different sources of variations in the design flow in order to establish different design variants, while applying appropriate methods and tools to evaluate and optimize their design.  Trains IC designers to recognize problems caused by parameter variations during manufacturing and to choose the best methods available to mitigate these issues during the design process; Offers both qual...

  5. A bit-rate flexible and power efficient all-optical demultiplexer realised by monolithically integrated Michelson interferometer

    DEFF Research Database (Denmark)

    Vaa, Michael; Mikkelsen, Benny; Jepsen, Kim Stokholm;

    1996-01-01

    A novel bit-rate flexible and very power efficient all-optical demultiplexer using differential optical control of a monolithically integrated Michelson interferometer with MQW SOAs is demonstrated at 40 to 10 Gbit/s. Gain switched DFB lasers provide ultra stable data and control signals....

  6. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    OpenAIRE

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-01-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal a...

  7. Photonic integrated circuits based on silica and polymer PLC

    Science.gov (United States)

    Izuhara, T.; Fujita, J.; Gerhardt, R.; Sui, B.; Lin, W.; Grek, B.

    2013-03-01

    Various methods of hybrid integration of photonic circuits are discussed focusing on merits and challenges. Material platforms discussed in this report are mainly polymer and silica. We categorize the hybridization methods using silica and polymer waveguides into two types, chip-to-chip and on-chip integration. General reviews of these hybridization technologies from the past works are reviewed. An example for each method is discussed in details. We also discuss current status of our silica PLC hybrid integration technology.

  8. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    Science.gov (United States)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  9. A monolithically integrated detector-preamplifier on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/{radical}Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

  10. Fully integrated monolithic opoelectronic transducer for real.time protein and DNA detection

    DEFF Research Database (Denmark)

    Misiakos, Konstatinos; S. Petrou, Panagiota; E. Kakabakos, Sotirios

    2010-01-01

    scheme through a board-to-board receptacle was developed and combined with a portable customized readout and control instrument. Real-time detection of deleterious mutations in BRCA1 gene related to predisposition to hereditary breast/ovarian cancer was performed with the instrument developed using PCR......The development and testing of a portable bioanalytical device which was capable for real-time monitoring of binding assays was demonstrated. The device was based on arrays of nine optoelectronic transducers monolithically integrated on silicon chips. The optocouplers consisted of nine silicon...... products. Detection was based on waveguided photons elimination through interaction with fluorescently labeled PCR products. Detection of single biomolecular binding events was also demonstrated using nanoparticles as labels. In addition, label-free monitoring of bioreactions in real time was achieved...

  11. Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Feng, Wen; Liang, Song; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-06-01

    A 1.60-µm laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3×10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

  12. Diffraction coupled phase-locked arrays of quantum cascade lasers with monolithically integrated Talbot cavities

    CERN Document Server

    Wang, Lei; Jia, Zhi-Wei; Zhao, Yue; Liu, Chuan-Wei; Liu, Ying-Hui; Zhai, Shen-Qiang; Zhuo, Ning; Liu, Feng-Qi; Xu, Xian-Gang

    2016-01-01

    Diffraction coupled arrays of quantum cascade laser are presented. The phase-locked behavior is achieved through monolithic integration of a Talbot cavity at one side of the laser array. The principle is based on fractional Talbot effect. By controlling length of Talbot cavity to be a quarter of Talbot distance (Zt/4), in-phase mode operation is selected. Measured far-field radiation patterns reflect stable in-phase mode operation under different injection currents, from threshold current to full power current. Diffraction-limited performance is shown from the lateral far-field, where three peaks can be obtained and main peak and side peak interval is 10.5{\\deg}. The phase-locked arrays with in-phase mode operation may be a feasible solution to get higher output power and maintain well beam quality meanwhile.

  13. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  14. NQR Spectrometer with a Two Integrated Circuits Radio Frequency Head

    Science.gov (United States)

    Zikumaru, Yushi

    1990-04-01

    An NQR spectrometer has been constructed using two linear integrated circuits in its oscillator-detector. This is very simple and compact and works in range 3-65 MHz. The radio frequency voltage can be varied from 10 mVp-p to 15 V p-p by changing the supply-voltage of an integrated circuit μA 733. The utility of the spectrometer is demonstrated by recording 35Cl NQR spectra in p-C6H4Cl2 , NaClO3 , and KClO3 .

  15. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Jr., Edward I. (Albuquerque, NM)

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  16. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, E.I. Jr.

    2000-06-20

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  17. Integrated logic circuits using single-atom transistors.

    Science.gov (United States)

    Mol, J A; Verduijn, J; Levine, R D; Remacle, F; Rogge, S

    2011-08-23

    Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal-oxide-semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch.

  18. Biochips: The Integrated Circuit of Biology

    DEFF Research Database (Denmark)

    Madsen, Jan

    2012-01-01

    Microfluidic biochips integrate different biochemical analysis functionalities (e.g., dispensers, filters, mixers, separators, detectors) on-chip, miniaturizing the macroscopic chemical and biological processes often processed by lab-robots, to a sub-millimeter scale. These microsystems offer...... several advantages over the conventional biochemical analyzers, e.g., reduced sample and reagent volumes, speeded up biochemical reactions, ultra-sensitive detection and higher system throughput, with several assays being integrated on the same chip. Hence, microfluidic biochips are replacing...... the conventional biochemical analyzers, and areable to integrate on-chip all the necessary functions for biochemical analysis. Microfluidic biochips have an immense potential in multiple application areas, such as clinical diagnostics, advanced sequencing, drug discovery, and environmental monitoring, to name...

  19. Integrated circuits for particle physics experiments

    CERN Document Server

    Snoeys, W; Campbell, M; Cantatore, E; Faccio, F; Heijne, Erik H M; Jarron, Pierre; Kloukinas, Kostas C; Marchioro, A; Moreira, P; Toifl, Thomas H; Wyllie, Ken H

    2000-01-01

    High energy particle physics experiments investigate the nature of matter through the identification of subatomic particles produced in collisions of protons, electrons, or heavy ions which have been accelerated to very high energies. Future experiments will have hundreds of millions of detector channels to observe the interaction region where collisions take place at a 40 MHz rate. This paper gives an overview of the electronics requirements for such experiments and explains how data reduction, timing distribution, and radiation tolerance in commercial CMOS circuits are achieved for these big systems. As a detailed example, the electronics for the innermost layers of the future tracking detector, the pixel vertex detector, is discussed with special attention to system aspects. A small-scale prototype (130 channels) implemented in standard 0.25 mu m CMOS remains fully functional after a 30 Mrad(SiO/sub 2/) irradiation. A full-scale pixel readout chip containing 8000 readout channels in a 14 by 16 mm/sup 2/ ar...

  20. Printed organic thin-film transistor-based integrated circuits

    Science.gov (United States)

    Mandal, Saumen; Noh, Yong-Young

    2015-06-01

    Organic electronics is moving ahead on its journey towards reality. However, this technology will only be possible when it is able to meet specific criteria including flexibility, transparency, disposability and low cost. Printing is one of the conventional techniques to deposit thin films from solution-based ink. It is used worldwide for visual modes of information, and it is now poised to enter into the manufacturing processes of various consumer electronics. The continuous progress made in the field of functional organic semiconductors has achieved high solubility in common solvents as well as high charge carrier mobility, which offers ample opportunity for organic-based printed integrated circuits. In this paper, we present a comprehensive review of all-printed organic thin-film transistor-based integrated circuits, mainly ring oscillators. First, the necessity of all-printed organic integrated circuits is discussed; we consider how the gap between printed electronics and real applications can be bridged. Next, various materials for printed organic integrated circuits are discussed. The features of these circuits and their suitability for electronics using different printing and coating techniques follow. Interconnection technology is equally important to make this product industrially viable; much attention in this review is placed here. For high-frequency operation, channel length should be sufficiently small; this could be achievable with a combination of surface treatment-assisted printing or laser writing. Registration is also an important issue related to printing; the printed gate should be perfectly aligned with the source and drain to minimize parasitic capacitances. All-printed organic inverters and ring oscillators are discussed here, along with their importance. Finally, future applications of all-printed organic integrated circuits are highlighted.

  1. EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

    Science.gov (United States)

    Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei

    2017-06-01

    We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.

  2. 77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

    Science.gov (United States)

    2012-03-29

    ...] [FR Doc No: 2012-7567] INTERNATIONAL TRADE COMMISSION [DN 2888] Certain Semiconductor Integrated... Certain Semiconductor Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is... importation of certain semiconductor integrated circuit devices and products containing same. The...

  3. 75 FR 51843 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2010-08-23

    ... Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products Containing the Same... certain large scale integrated circuit semiconductor chips and products containing same by reason of... including the following: Freescale Semiconductor Xiqing Integrated Semiconductor Manufacturing...

  4. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2 mm3/m

  5. Electromagnetic Interactions in High-Speed Integrated Electronic Circuits

    Science.gov (United States)

    1989-03-31

    East Lansing, MI, December 1987. [81 D. P. Nyquist, M. S. Viola, M. J. Cloud, and M. Havrilla , "On Sommerfeld-integral electric field kernels for...KERNELS FOR NICROSTRIP-BASED CIRCUITS D.P. Nyquist, M.S. Viola, M.J. Cloud and M. Havrilla Department of Electrical Engineering Michigan State

  6. Performance of digital integrated circuit technologies at very high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Prince, J.L.; Draper, B.L.; Rapp, E.A.; Kromberg, J.N.; Fitch, L.T.

    1980-01-01

    Results of investigations of the performance and reliability of digital bipolar and CMOS integrated circuits over the 25 to 340/sup 0/C range are reported. Included in these results are both parametric variation information and analysis of the functional failure mechanisms. Although most of the work was done using commercially available circuits (TTL and CMOS) and test chips from commercially compatible processes, some results of experimental simulations of dielectrically isolated CMOS are also discussed. It was found that commercial Schottky clamped TTL, and dielectrically isolated, low power Schottky-clamped TTL, functioned to junction temperatures in excess of 325/sup 0/C. Standard gold doped TTL functioned only to 250/sup 0/C, while commercial, isolated I/sup 2/L functioned to the range 250/sup 0/C to 275/sup 0/C. Commercial junction isolated CMOS, buffered and unbuffered, functioned to the range 280/sup 0/C to 310/sup 0/C/sup +/, depending on the manufacturer. Experimental simulations of simple dielectrically isolated CMOS integrated circuits, fabricated with heavier doping levels than normal, functioned to temperatures in excess of 340/sup 0/C. High temperature life testing of experimental, silicone-encapsulated simple TTL and CMOS integrated circuits have shown no obvious life limiting problems to date. No barrier to reliable functionality of TTL bipolar or CMOS integrated ciruits at temperatures in excess of 300/sup 0/C has been found.

  7. Photonic Integrated Circuits for mmW Systems

    DEFF Research Database (Denmark)

    Vegas Olmos, Juan José; Heck, M. J. R.; Tafur Monroy, Idelfonso

    and carrier frequencies required for high- capacity wireless networks and remote sensing applications. In this paper, we will introduce our e®orts to leverage the advantages of microwave photonics and photonic integrated circuits to de- velop low-cost and ubiquitous wireless technology enabled by silicon...

  8. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2

  9. FUZZY NEURAL NETWORK FOR OBJECT IDENTIFICATION ON INTEGRATED CIRCUIT LAYOUTS

    Directory of Open Access Journals (Sweden)

    A. A. Doudkin

    2015-01-01

    Full Text Available Fuzzy neural network model based on neocognitron is proposed to identify layout objects on images of topological layers of integrated circuits. Testing of the model on images of real chip layouts was showed a highеr degree of identification of the proposed neural network in comparison to base neocognitron.

  10. 1998 technology roadmap for integrated circuits used in critical applications

    Energy Technology Data Exchange (ETDEWEB)

    Dellin, T.A.

    1998-09-01

    Integrated Circuits (ICs) are being extensively used in commercial and government applications that have extreme consequences of failure. The rapid evolution of the commercial microelectronics industry presents serious technical and supplier challenges to this niche critical IC marketplace. This Roadmap was developed in conjunction with the Using ICs in Critical Applications Workshop which was held in Albuquerque, NM, November 11--12, 1997.

  11. Printed Circuit Board Integrated Toroidal Radio Frequency Inductors

    DEFF Research Database (Denmark)

    Kamby, Peter; Knott, Arnold; Andersen, Michael A. E.

    2012-01-01

    implemented as solenoids, either in spiral or cylindrical form. Those have the disadvantage of excessive stray fields, which can cause losses and disturbances in adjacent circuitry. Therefore this paper presents the analysis, design and realization of a printed circuit board (PCB) integrated inductor under...

  12. Three-dimensional integrated circuit design

    CERN Document Server

    Xie, Yuan; Sapatnekar, Sachin S

    2009-01-01

    This book presents an overview of the field of 3D IC design, with an emphasis on electronic design automation (EDA) tools and algorithms that can enable the adoption of 3D ICs, and the architectural implementation and potential for future 3D system design. The aim of this book is to provide the reader with a complete understanding of: the promise of 3D ICs in building novel systems that enable the chip industry to continue along the path of performance scaling, the state of the art in fabrication technologies for 3D integration, the most prominent 3D-specific EDA challenges, along with solutio

  13. Radio frequency integrated circuit design for cognitive radio systems

    CERN Document Server

    Fahim, Amr

    2015-01-01

    This book fills a disconnect in the literature between Cognitive Radio systems and a detailed account of the circuit implementation and architectures required to implement such systems.  Throughout the book, requirements and constraints imposed by cognitive radio systems are emphasized when discussing the circuit implementation details.  In addition, this book details several novel concepts that advance state-of-the-art cognitive radio systems.  This is a valuable reference for anybody with background in analog and radio frequency (RF) integrated circuit design, needing to learn more about integrated circuits requirements and implementation for cognitive radio systems. ·         Describes in detail cognitive radio systems, as well as the circuit implementation and architectures required to implement them; ·         Serves as an excellent reference to state-of-the-art wideband transceiver design; ·         Emphasizes practical requirements and constraints imposed by cognitive radi...

  14. Flexible circuits with integrated switches for robotic shape sensing

    Science.gov (United States)

    Harnett, C. K.

    2016-05-01

    Digital switches are commonly used for detecting surface contact and limb-position limits in robotics. The typical momentary-contact digital switch is a mechanical device made from metal springs, designed to connect with a rigid printed circuit board (PCB). However, flexible printed circuits are taking over from the rigid PCB in robotics because the circuits can bend while carrying signals and power through moving joints. This project is motivated by a previous work where an array of surface-mount momentary contact switches on a flexible circuit acted as an all-digital shape sensor compatible with the power resources of energy harvesting systems. Without a rigid segment, the smallest commercially-available surface-mount switches would detach from the flexible circuit after several bending cycles, sometimes violently. This report describes a low-cost, conductive fiber based method to integrate electromechanical switches into flexible circuits and other soft, bendable materials. Because the switches are digital (on/off), they differ from commercially-available continuous-valued bend/flex sensors. No amplification or analog-to-digital conversion is needed to read the signal, but the tradeoff is that the digital switches only give a threshold curvature value. Boundary conditions on the edges of the flexible circuit are key to setting the threshold curvature value for switching. This presentation will discuss threshold-setting, size scaling of the design, automation for inserting a digital switch into the flexible circuit fabrication process, and methods for reconstructing a shape from an array of digital switch states.

  15. Classical Conditioning with Pulsed Integrated Neural Networks: Circuits and System

    DEFF Research Database (Denmark)

    Lehmann, Torsten

    1998-01-01

    In this paper we investigate on-chip learning for pulsed, integrated neural networks. We discuss the implementational problems the technology imposes on learning systems and we find that abiologically inspired approach using simple circuit structures is most likely to bring success. We develop...... a suitable learning algorithm -- a continuous-time version of a temporal differential Hebbian learning algorithm for pulsed neural systems with non-linear synapses -- as well as circuits for the electronic implementation. Measurements from an experimental CMOS chip are presented. Finally, we use our test...

  16. Quantum dot rolled-up microtube optoelectronic integrated circuit.

    Science.gov (United States)

    Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

    2013-05-15

    A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

  17. Digital integrated circuit design using Verilog and SystemVerilog

    CERN Document Server

    Mehler, Ronald W

    2014-01-01

    For those with a basic understanding of digital design, this book teaches the essential skills to design digital integrated circuits using Verilog and the relevant extensions of SystemVerilog. In addition to covering the syntax of Verilog and SystemVerilog, the author provides an appreciation of design challenges and solutions for producing working circuits. The book covers not only the syntax and limitations of HDL coding, but deals extensively with design problems such as partitioning and synchronization, helping you to produce designs that are not only logically correct, but will actually

  18. Nanosecond monolithic CMOS readout cell

    Science.gov (United States)

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  19. Development of a viable 3D integrated circuit technology

    Institute of Scientific and Technical Information of China (English)

    陈文新; 高秉强

    2001-01-01

    Three_dimensional integrated circuit technology with transistors stacked on top of one another in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the technique to obtain high performance multi-layer transistors is extraordinarily difficult. Not until recently does such technology become feasible. In this paper, the background and various techniques to form three-dimensional circuits will be reviewed. Recent development of a simple and promising technology to achieve three-dimensional integration using Metal-Induced-Lateral-Crystallization will be described. Preliminary results of 3D inverters will also be provided to demonstrate the viability for 3D integration.

  20. Millimeter-wave and terahertz integrated circuit antennas

    Science.gov (United States)

    Rebeiz, Gabriel M.

    1992-01-01

    This paper presents a comprehensive review of integrated circuit antennas suitable for millimeter and terahertz applications. A great deal of research was done on integrated circuit antennas in the last decade and many of the problems associated with electrically thick dielectric substrates, such as substrate modes and poor radiation patterns, have been understood and solved. Several new antennas, such as the integrated horn antenna, the dielectric-filled parabola, the Fresnel plate antenna, the dual-slot antenna, and the log-periodic and spiral antennas on extended hemispherical lenses, have resulted in excellent performance at millimeter-wave frequencies, and are covered in detail in this paper. Also, a review of the efficiency definitions used with planar antennas is given in detail in the appendix.

  1. Integrated microchannel cooling in a three dimensional integrated circuit: A thermal management

    Directory of Open Access Journals (Sweden)

    Wang Kang-Jia

    2016-01-01

    Full Text Available Microchannel cooling is a promising technology for solving the three-dimensional integrated circuit thermal problems. However, the relationship between the microchannel cooling parameters and thermal behavior of the three dimensional integrated circuit is complex and difficult to understand. In this paper, we perform a detailed evaluation of the influence of the microchannel structure and the parameters of the cooling liquid on steady-state temperature profiles. The results presented in this paper are expected to aid in the development of thermal design guidelines for three dimensional integrated circuit with microchannel cooling.

  2. The two independent equations of circuits in integral form of field theory: The fundamental law of circuits

    Institute of Scientific and Technical Information of China (English)

    CHEN Shennian

    2005-01-01

    Circuit theory is an extremely important basic theory in electrical and electronic sciences and technologies. Over more than a century, researchers have come to the conclusion that a fundamental law of circuits needs to satisfy the following three conditions: (1) Independency. It must be able to solve independently the basic problems of general solutions to the distribution of current and voltage in circuits. (2)Fundamentality. It cannot be derived from circuit theory and it must be the starting point for the establishment of circuit theory; it deduces the problem relevant to circuit theory by using purely logical inference, and establishes circuit theory into an independent deductive system. (3) Applicability. It must be widely applicable to all spheres of circuits,which includes sinusoidal steady-state linear and nonlinear networks, non-sinusoidal steady-state linear and nonlinear networks, transient-state processes, etc. From all networks to which the fundamental law of circuits applies, sinusoidal steady-state linear network is chosen as the most basic one to demonstrate that the two independent equations of circuits in integral form derived from Maxwell equations are able to meet these three conditions. Consequently, it is believed to be the fundamental law of circuits newly recognized today. This paper also makes the initiative to establish a circuit theory by which the basic rules of electromagnetic field govern the circuits, and the unity of electromagnetic fields and circuits is achieved.

  3. Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission.

    Science.gov (United States)

    Larrue, Alexandre; Wilhelm, Christophe; Vest, Gwenaelle; Combrié, Sylvain; de Rossi, Alfredo; Soci, Cesare

    2012-03-26

    A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

  4. Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

    Science.gov (United States)

    Morales, J. S. D.; Gandan, S.; Ren, D.; Ochalski, Tomasz J.; Huffaker, Diana L.

    2017-02-01

    In this work, we study the optical properties and emission dynamics of the novel nanostructure p-GaAs nanopillars (NPs) on Si. The integration of III-V optoelectronics on Si substrates is essential for next-generation high-speed communications. NPs on Si are good candidates as gain media in monolithically integrated small-scale lasers on silicon. In order to develop this technology, an in-depth knowledge of the NP structure is necessary to resolve its optimal optical properties. The optical characterization which has been carried out consists of the emission analysis for different NP geometries. We measured NPs with different combinations of pitch (of the order of a few μm) and diameter (of the order of tens of nm). A comparison of intensities for the various NPs provides us with the most efficient geometry. The quality of the crystal grown has been studied from temperature-dependent photoluminescence (PL). A red shift and a significant reduction of the intensity of the NP emission are observed with an increase in temperature. The results also show the presence of two non-radiative recombination channels when the intensity peaks at different temperatures are analyzed with the activation energy function.

  5. Integrated circuit electrometer and sweep circuitry for an atmospheric probe

    Science.gov (United States)

    Zimmerman, L. E.

    1971-01-01

    The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

  6. RF and microwave integrated circuit development technology, packaging and testing

    CERN Document Server

    Gamand, Patrice; Kelma, Christophe

    2017-01-01

    RF and Microwave Integrated Circuit Development bridges the gap between existing literature, which focus mainly on the 'front-end' part of a product development (system, architecture, design techniques), by providing the reader with an insight into the 'back-end' part of product development. In addition, the authors provide practical answers and solutions regarding the choice of technology, the packaging solutions and the effects on the performance on the circuit and to the industrial testing strategy. It will also discuss future trends and challenges and includes case studies to illustrate examples. * Offers an overview of the challenges in RF/microwave product design * Provides practical answers to packaging issues and evaluates its effect on the performance of the circuit * Includes industrial testing strategies * Examines relevant RF MIC technologies and the factors which affect the choice of technology for a particular application, e.g. technical performance and cost * Discusses future trends and challen...

  7. Power-Integrated Circuit Active Leakage Current Detector

    Directory of Open Access Journals (Sweden)

    M. F. Bulacio

    2012-01-01

    Full Text Available Most of the failures of induction motors become insulation faults, causing a permanent damage. Using differential current transformers, a system capable of insulation fault detection was developed, based on the differential relay protection scheme. Both signal injection and fault detection circuitry were integrated in a single chip. The proposed scheme is faster than other existing protection and not restricted to protect induction motors, but several other devices (such as IGBTs and systems. This paper explains the principle of operation of fault protection scheme and analyzes an integrated implementation through simulations and experimental results. A power-integrated circuit (PIC implementation is presented.

  8. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  9. Attachment method for stacked integrated circuit (IC) chips

    Energy Technology Data Exchange (ETDEWEB)

    Bernhardt, Anthony F. (Berkeley, CA); Malba, Vincent (Livermore, CA)

    1999-01-01

    An attachment method for stacked integrated circuit (IC) chips. The method involves connecting stacked chips, such as DRAM memory chips, to each other and/or to a circuit board. Pads on the individual chips are rerouted to form pads on the side of the chip, after which the chips are stacked on top of each other whereby desired interconnections to other chips or a circuit board can be accomplished via the side-located pads. The pads on the side of a chip are connected to metal lines on a flexible plastic tape (flex) by anisotropically conductive adhesive (ACA). Metal lines on the flex are likewise connected to other pads on chips and/or to pads on a circuit board. In the case of a stack of DRAM chips, pads to corresponding address lines on the various chips may be connected to the same metal line on the flex to form an address bus. This method has the advantage of reducing the number of connections required to be made to the circuit board due to bussing; the flex can accommodate dimensional variation in the alignment of chips in the stack; bonding of the ACA is accomplished at low temperature and is otherwise simpler and less expensive than solder bonding; chips can be bonded to the ACA all at once if the sides of the chips are substantially coplanar, as in the case for stacks of identical chips, such as DRAM.

  10. Attachment method for stacked integrated circuit (IC) chips

    Energy Technology Data Exchange (ETDEWEB)

    Bernhardt, A.F.; Malba, V.

    1999-08-03

    An attachment method for stacked integrated circuit (IC) chips is disclosed. The method involves connecting stacked chips, such as DRAM memory chips, to each other and/or to a circuit board. Pads on the individual chips are rerouted to form pads on the side of the chip, after which the chips are stacked on top of each other whereby desired interconnections to other chips or a circuit board can be accomplished via the side-located pads. The pads on the side of a chip are connected to metal lines on a flexible plastic tape (flex) by anisotropically conductive adhesive (ACA). Metal lines on the flex are likewise connected to other pads on chips and/or to pads on a circuit board. In the case of a stack of DRAM chips, pads to corresponding address lines on the various chips may be connected to the same metal line on the flex to form an address bus. This method has the advantage of reducing the number of connections required to be made to the circuit board due to bussing; the flex can accommodate dimensional variation in the alignment of chips in the stack; bonding of the ACA is accomplished at low temperature and is otherwise simpler and less expensive than solder bonding; chips can be bonded to the ACA all at once if the sides of the chips are substantially coplanar, as in the case for stacks of identical chips, such as DRAM. 12 figs.

  11. Monolithic integration of GMR sensors for standard CMOS-IC current sensing

    Science.gov (United States)

    De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

    2017-09-01

    In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

  12. A monolithically integrated dual-mode laser for photonic microwave generation and all-optical clock recovery

    Science.gov (United States)

    Yu, Liqiang; Zhou, Daibing; Zhao, Lingjuan

    2014-09-01

    We demonstrate a monolithically integrated dual-mode laser (DML) with narrow-beat-linewidth and wide-beat-tunability. Using a monolithic DFB laser subjected to amplified feedback, photonic microwave generation of up to 45 GHz is obtained with higher than 15 GHz beat frequency tunability. Thanks to the high phase correlation of the two modes and the narrow mode linewidth, a RF linewidth of lower than 50 kHz is measured. Simulations are also carried out to illustrate the dual-mode beat characteristic. Furthermore, using the DML, an all-optical clock recovery for 40  Gbaud NRZ-QPSK signals is demonstrated. Timing jitter of lower than 363 fs (integrated within a frequency range from 100 Hz to 1 GHz) is obtained.

  13. 75 FR 75694 - Certain Semiconductor Integration Circuits Using Tungsten Metallization and Products Containing...

    Science.gov (United States)

    2010-12-06

    ... COMMISSION Certain Semiconductor Integration Circuits Using Tungsten Metallization and Products Containing... United States after importation of certain semiconductor integrated circuits using tungsten metallization... following six respondents ] remained in the investigation: Tower Semiconductor, Ltd. of Israel;...

  14. 76 FR 58041 - Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice...

    Science.gov (United States)

    2011-09-19

    ... COMMISSION Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice... certain digital televisions containing integrated circuit devices and components thereof by reason of... the sale within the United States after importation of certain digital televisions containing...

  15. 77 FR 42764 - Certain Integrated Circuits, Chipsets, & Products Containing Same Including Televisions; Notice...

    Science.gov (United States)

    2012-07-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Integrated Circuits, Chipsets, & Products Containing Same Including Televisions; Notice of... limited exclusion order against certain integrated circuits, chipsets, and products containing the...

  16. Microwave Semiconductor Research - Materials, Devices, Circuits.

    Science.gov (United States)

    1982-04-30

    fabricated with I micron length gates, gate widths of 50-250 microns, and transconductances of 80-90 ms/mm. The processing sequence for the monolithic circuit...Ballantyne, invited seminar, Comsat Laboratories, 9 July, 1981. 4. " Monolithically Integrated Active Optical Devices", J. Ballantyne, D.K. Wagner, B...an optical Michelson interferometer with calibrated variable spacing in one arm. -. . . . .d* 34 This apparatus permits us to measure optical pulse

  17. Integration of monolithic porous polymer with droplet-based microfluidics on a chip for nano/picoliter volume sample analysis

    OpenAIRE

    Kim, Jin-Young; Chang, Soo-Ik; Andrew J deMello; O’Hare, Danny

    2014-01-01

    In this paper, a porous polymer nanostructure has been integrated with droplet-based microfluidics in a single planar format. Monolithic porous polymer (MPP) was formed selectively within a microfluidic channel. The resulting analyte bands were sequentially comartmentalised into droplets. This device reduces band broadening and the effects of post-column dead volume by the combination of the two techniques. Moreover it offers the precise control of nano/picoliter volume samples.

  18. Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure

    Science.gov (United States)

    Oh, Su Hwan; Lee, Ji-Myon; Kim, Soo; Ko, Hyunsung; Lee, Chul-Wook; Park, Sahnggi; Park, Moon-Ho

    2004-10-01

    We have demonstrated a high-power widely tunable sampled grating (SG) DBR laser integrated monolithically with optical semiconductor amplifier (SOA), using planar buried heterostructure (PBH). The measured threshold current was 5 mA on average with 60 chips randomly selected which is lowest among the typical average values. Fiber-coupled output power was 12.4 dBm and the output power variation was ˜1 dB for the whole tuning range.

  19. Radiation Testing and Evaluation Issues for Modern Integrated Circuits

    Science.gov (United States)

    LaBel, Kenneth A.; Cohn, Lew M.

    2005-01-01

    Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

  20. Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

    Science.gov (United States)

    Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

    2012-01-01

    Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

  1. A photospectrometer realized in a standard integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Simpson, M.L.; Dress, W.B.; Ericson, M.N.; Jellison, G.E.; Sitter, D.N.; Wintenberg, A.L. [Oak Ridge National Laboratory, P.O. Box 2008, MS 6006, Oak Ridge, Tennessee37831-6006 (United States); French, D.F. [Department of Electrical Engineering, Ferris Hall, University of Tennessee, Knoxville, Tennessee 37996-2100 (United States)

    1998-02-01

    A photospectrometer has been realized in a standard integrated circuit (IC) process. Only the masks, materials, and fabrication steps inherent to this IC process were used (i.e., no post processing to add mechanical or optical devices for filtering). The spectrometer was composed of a set of 18 photodetectors with independent spectral responses. The responses of these devices were weighted and summed to form outputs proportional to the input optical power in discrete wavelength bands in the region from {approximately}400 to {approximately}1100nm. With the solution space restricted to a 60 nm band, this instrument could resolve Gaussian input spectra ({sigma}=5nm) with a peak-to-peak spacing of less than 15 nm. This device could easily be integrated with additional analog, digital, or wireless circuits to realize a true laboratory instrument on-a-chip. {copyright} {ital 1998 American Institute of Physics.}

  2. Design techniques for low-voltage analog integrated circuits

    Science.gov (United States)

    Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

    2017-08-01

    In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

  3. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  4. Problems of Reliability of Semiconductor Integrated Circuits in Plastic Housings,

    Science.gov (United States)

    1980-10-24

    of PNP transistors in plastic housings (expressed in % per 1000 h) with the 90% confidence level as a function of the sum of temperature T (in oC) and...semiconductor integrated circuits are basically modified versions of transistor housings. The characteristic feature of that type of a housing is...utilization of well-mastered technological processes introduced directly from the transistor production. Those housings have been thoroughly studied and

  5. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    OpenAIRE

    2014-01-01

    In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. For high temperature electronics, the material demands are high regarding functionality and stability at elevated working temperatures, during and after temperature cycling and during long time of use.  Silicon ...

  6. Integrated Circuit Readout for the Silicon Sensor Test Station

    CERN Document Server

    Atkin, E; Silaev, A; Fedenko, A; Karmanov, D; Merkin, M; Voronin, A

    2009-01-01

    Various chips for the silicon sensors measurements are described. These chips are based on 0.35 um and 0.18um CMOS technology. Several analog chips together with self-trigger /derandomizer one allow to measure silicon sensors designed for different purposes. Tracking systems, calorimeters, particle charge measurement system and other application sensors can be investigated by the integrated circuit readout with laser or radioactive sources. Also electrical parameters of silicon sensors can be studied by such test setup.

  7. Optimization of Segmentation Quality of Integrated Circuit Images

    Directory of Open Access Journals (Sweden)

    Gintautas Mušketas

    2012-04-01

    Full Text Available The paper presents investigation into the application of genetic algorithms for the segmentation of the active regions of integrated circuit images. This article is dedicated to a theoretical examination of the applied methods (morphological dilation, erosion, hit-and-miss, threshold and describes genetic algorithms, image segmentation as optimization problem. The genetic optimization of the predefined filter sequence parameters is carried out. Improvement to segmentation accuracy using a non optimized filter sequence makes 6%.Artcile in Lithuanian

  8. Experimental study of surface crystallization on integrated circuit chips

    Institute of Scientific and Technical Information of China (English)

    Zhang Xin; Liu Meng-Xin; Gao Yong; Wang Cai-Lin; Wang Zhi-Wei; Zhang Xian

    2006-01-01

    A surface crystallization phenomenon on bonding pads and wires of integrated circuit chip is reported in this paper. Through a lot of experiments, an unknown failure effect caused by mixed crystalline matter is revealed, whereas non-plasma fluorine contamination cannot cause the failure of bonding pads. By experiments combined with infrared spectroscopy analysis, the surface crystallization effect is studied. The conclusion of the study can provide the guidance for IC fabrication, modelling and analysis.

  9. Advances in Developing Transitions in Microwave Integrated Circuits

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yun-chuan; WANG Bing-zhong

    2005-01-01

    Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic types: one is transition between the same kind of transmission lines on different planes of a common substrate, the other transition between different types of transmission lines.Furthermore, future development of transition structures is discussed.

  10. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    Science.gov (United States)

    2011-01-14

    Soltani , and A. Adibi, “High Quality Planar Silicon Nitride Microdisk Resonators for Integrated Photonics in the Visible Wavelength Range,” Optics...contrast, high-Q resonators in chalcogenide glass for sensing,” Opt. Lett. 33, 2500–2502 (2008). [4] B. Momeni, S. Yegnanarayanan, M. Soltani , A. A...lightwave circuits,” J. Lightwave Technol. 17(11), 2032–2038 (1999). [14] B. Momeni, J. Huang, M. Soltani , M. Askari, S. Mohammadi, M. Rakhshandehroo, and

  11. Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN-PT Ferroelectric Single Crystal.

    Science.gov (United States)

    Fang, Huajing; Xu, Chao; Ding, Jie; Li, Qiang; Sun, Jia-Lin; Dai, Ji-Yan; Ren, Tian-Ling; Yan, Qingfeng

    2016-12-07

    Photodetectors capable of detecting two or more bands simultaneously with a single system have attracted extensive attentions because of their critical applications in image sensing, communication, and so on. Here, we demonstrate a self-powered ultrabroadband photodetector monolithically integrated on a 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-28PT) single crystal. By combining the optothermal and pyroelectric effect, the multifunctional PMN-28PT single crystal can response to a wide wavelength range from UV to terahertz (THz). At room temperature, the photodetector could generate a pyroelectric current under the intermittent illumination of incident light in absence of external bias. A systematic study of the photoresponse was investigated. The pyroelectric current shows an almost linear relationship to illumination intensity. Benefiting from the excellent pyroelectric property of PMN-28PT single crystal and the optimized device architecture, the device exhibited a dramatic improvement in operation frequency up to 3 kHz without any obvious degradation in sensitivity. Such a self-powered photodetector with ultrabroadband response may open a window for the novel application of ferroelectric materials in optoelectronics.

  12. Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

    Science.gov (United States)

    Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

    2015-01-01

    A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

  13. Garnet-free optical circulators monolithically integrated on spatially modified III-V quantum wells

    CERN Document Server

    Aleahmad, Parinaz; Christodoulides, Demetrios; LiKamWa, Patrick

    2016-01-01

    Optical circulators are indispensable components in photonic networks that are aimed to route information in a unidirectional way among their N-ports1,2. In general, these devices rely on magneto-optical garnets3 with appreciable Verdet constants that are utilized in conjunction with other elements like permanent magnets, wave-plates, birefringent crystals and/or beam splitters. Consequently, these arrangements are typically bulky and hence not conducive to on-chip photonic integration4-6. Of interest would be to devise strategies through which miniaturized optical circulators can be monolithically fabricated on light-emitting semiconductor platforms by solely relying on physical properties that are indigenous to the material itself. By exploiting the interplay between non-Hermiticity and nonlinearity, here we demonstrate a new class of chip-scale circulators on spatially modified III-V quantum well systems. These garnet-free unidirectional structures are broadband (over 2.5 THz) at 1550 nm, effectively loss-...

  14. ATR LEU Monolithic Foil-Type Fuel with Integral Cladding Burnable Absorber – Neutronics Performance Evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Gray Chang

    2012-03-01

    The Advanced Test Reactor (ATR), currently operating in the United States, is used for material testing at very high neutron fluxes. Powered with highly enriched uranium (HEU), the ATR has a maximum thermal power rating of 250 MWth. Because of the large test volumes located in high flux areas, the ATR is an ideal candidate for assessing the feasibility of converting HEU driven reactor cores to low-enriched uranium (LEU) cores. The burnable absorber - 10B, was added in the inner and outer plates to reduce the initial excess reactivity, and to improve the peak ratio of the inner/outer heat flux. The present work investigates the LEU Monolithic foil-type fuel with 10B Integral Cladding Burnable Absorber (ICBA) design and evaluates the subsequent neutronics operating effects of this proposed fuel designs. The proposed LEU fuel specification in this work is directly related to both the RERTR LEU Development Program and the Advanced Test Reactor (ATR) LEU Conversion Project at Idaho National Laboratory (INL).

  15. Monolithically integrated two-axis microgripper for polarization maintaining in optical fiber assembly.

    Science.gov (United States)

    Zhang, Jianbin; Lu, Kangkang; Chen, Weihai; Jiang, Jun; Chen, Wenjie

    2015-02-01

    Polarization maintaining optical fiber (PMOF) is a kind of special optical fiber that is designed to transmit the linearly polarized light. Unlike the general optical fiber, it is critical to conduct the rotational alignment between two PMOFs to guarantee the efficiency of light transmission. Until now, this alignment task still cannot be addressed with an efficient and economical way. Hence, we propose a monolithically integrated two-axis flexure-based microgripper that has the grasping and rubbing functions. To achieve a compact structure, the microgripper is designed with an asymmetric architecture. In this paper, the pseudo-rigid body model approach and finite element analysis are conducted to provide the essential guideline to accomplish the theoretical design. The prototype is fabricated by wire electrical discharge machining, with which two experiments are conducted to validate the performance of the microgripper. The experimental results demonstrate that the proposed microgripper can firmly grasp the optical fiber with the diameter of 250 μm and meanwhile can rub it more than 90° accurately and effectively, which indicate that it can satisfy the operating requirements well in the PMOF assembly.

  16. Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser

    Science.gov (United States)

    Oennegren, Jan; Svedin, Jan; Sahlen, Olof; Jansson, Mats; Alping, Arne G.

    1995-10-01

    Electroabsorption modulators (EA) are attractive components for very high speed digital links (up to 40 Gbit/s). The objective of the present work has been to evaluate the analog performance and use of a Franz Keldysh modulator (FK) monolithically integrated with a DFB laser (DFB/FK-modulator) operating at 1550 nm. This DFB/FK-modulator is a combination of a directly modulated laser diode and an external modulator in one chip. The analog performance is therefore depending on both the modulator bias voltage and DFB-laser bias current. The normal optical output characteristic from an EA-modulator has a strongly nonlinear behavior. The modulator described in this paper shows for low bias voltage and/or high laser current a linear bahavior. This linear behavior is mainly due to the hole pile-up effect at the p/i-interface of the modulator. In digital transmission system this hole pile-up effect is a disadvantage, but in an analog transmission system it can be used to achieve better analog performance. Measurements (and simulations) on the DFB/FK-modulator show that its analog performance competes well with direct modulated FP and DFB lasers, especially if the modulator is biased for optimum analog performance.

  17. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser

    Science.gov (United States)

    Cheng, YuanBing; Pan, JiaoQing; Zhou, Fan; Wang, BaoJun; Zhu, Hongliang; Zhao, Lingjuan; Wang, Wei

    2007-11-01

    High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250 μm DFB and 170 μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

  18. Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

    Energy Technology Data Exchange (ETDEWEB)

    Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried [Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7, Vienna 1040 (Austria)

    2015-01-26

    A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} at 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

  19. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    CERN Document Server

    Ding, Yunhong; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J; Galili, Michael; Morioka, Toshio; Oxenlowe, Leif Katsuo

    2016-01-01

    Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing swi...

  20. 77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

    Science.gov (United States)

    2012-05-01

    ... COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of... the sale within the United States after importation of certain semiconductor integrated circuit... semiconductor integrated circuit devices and products containing same that infringe one or more of claims 1,...

  1. 77 FR 1505 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions; Notice...

    Science.gov (United States)

    2012-01-10

    ... COMMISSION Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions; Notice... importation, and the sale within the United States after importation of certain integrated circuits, chipsets... importation, or the sale within the United States after importation of certain integrated circuits,...

  2. Diamond electro-optomechanical resonators integrated in nanophotonic circuits

    CERN Document Server

    Rath, P; Diewald, S; Lewes-Malandrakis, G; Brink, D; Heidrich, N; Nebel, C; Pernice, W H P

    2014-01-01

    Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom in free-standing diamond electro-optomechanical resonators. We obtain high quality factors up to 9600, allowing us to read out the driven nanomechanical response with integrated optical interferometers with high sensitivity. We are able to excite higher order mechanical modes up to 115 MHz and observe the nanomechanical response also under ambient conditions.

  3. Arbitrary modeling of TSVs for 3D integrated circuits

    CERN Document Server

    Salah, Khaled; El-Rouby, Alaa

    2014-01-01

    This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor?and inductive-based

  4. Photonic-integrated circuit for continuous-wave THz generation.

    Science.gov (United States)

    Theurer, Michael; Göbel, Thorsten; Stanze, Dennis; Troppenz, Ute; Soares, Francisco; Grote, Norbert; Schell, Martin

    2013-10-01

    We demonstrate a photonic-integrated circuit for continuous-wave (cw) terahertz (THz) generation. By comprising two lasers and an optical phase modulator on a single chip, the full control of the THz signal is enabled via a unique bidirectional operation technique. Integrated heaters allow for continuous tuning of the THz frequency over 570 GHz. Applied to a coherent cw THz photomixing system operated at 1.5 μm optical wavelength, we reach a signal-to-noise ratio of 44 dB at 1.25 THz, which is identical to the performance of a standard system based on discrete components.

  5. Pneumatic oscillator circuits for timing and control of integrated microfluidics.

    Science.gov (United States)

    Duncan, Philip N; Nguyen, Transon V; Hui, Elliot E

    2013-11-05

    Frequency references are fundamental to most digital systems, providing the basis for process synchronization, timing of outputs, and waveform synthesis. Recently, there has been growing interest in digital logic systems that are constructed out of microfluidics rather than electronics, as a possible means toward fully integrated laboratory-on-a-chip systems that do not require any external control apparatus. However, the full realization of this goal has not been possible due to the lack of on-chip frequency references, thus requiring timing signals to be provided from off-chip. Although microfluidic oscillators have been demonstrated, there have been no reported efforts to characterize, model, or optimize timing accuracy, which is the fundamental metric of a clock. Here, we report pneumatic ring oscillator circuits built from microfluidic valves and channels. Further, we present a compressible-flow analysis that differs fundamentally from conventional circuit theory, and we show the utility of this physically based model for the optimization of oscillator stability. Finally, we leverage microfluidic clocks to demonstrate circuits for the generation of phase-shifted waveforms, self-driving peristaltic pumps, and frequency division. Thus, pneumatic oscillators can serve as on-chip frequency references for microfluidic digital logic circuits. On-chip clocks and pumps both constitute critical building blocks on the path toward achieving autonomous laboratory-on-a-chip devices.

  6. Universal discrete Fourier optics RF photonic integrated circuit architecture.

    Science.gov (United States)

    Hall, Trevor J; Hasan, Mehedi

    2016-04-04

    This paper describes a coherent electro-optic circuit architecture that generates a frequency comb consisting of N spatially separated orders using a generalised Mach-Zenhder interferometer (MZI) with its N × 1 combiner replaced by an optical N × N Discrete Fourier Transform (DFT). Advantage may be taken of the tight optical path-length control, component and circuit symmetries and emerging trimming algorithms offered by photonic integration in any platform that offers linear electro-optic phase modulation such as LiNbO3, silicon, III-V or hybrid technology. The circuit architecture subsumes all MZI-based RF photonic circuit architectures in the prior art given an appropriate choice of output port(s) and dimension N although the principal application envisaged is phase correlated subcarrier generation for all optical orthogonal frequency division multiplexing. A transfer matrix approach is used to model the operation of the architecture. The predictions of the model are validated by simulations performed using an industry standard software tool. Implementation is found to be practical.

  7. FDTD-SPICE for Characterizing Metamaterials Integrated with Electronic Circuits

    Directory of Open Access Journals (Sweden)

    Zhengwei Hao

    2012-01-01

    Full Text Available A powerful time-domain FDTD-SPICE simulator is implemented and applied to the broadband analysis of metamaterials integrated with active and tunable circuit elements. First, the FDTD-SPICE modeling theory is studied and details of interprocess communication and hybridization of the two techniques are discussed. To verify the model, some simple cases are simulated with results in both time domain and frequency domain. Then, simulation of a metamaterial structure constructed from periodic resonant loops integrated with lumped capacitor elements is studied, which demonstrates tuning resonance frequency of medium by changing the capacitance of the integrated elements. To increase the bandwidth of the metamaterial, non-Foster transistor configurations are integrated with the loops and FDTD-SPICE is applied to successfully bridge the physics of electromagnetic and circuit topologies and to model the whole composite structure. Our model is also applied to the design and simulation of a metasurface integrated with nonlinear varactors featuring tunable reflection phase characteristic.

  8. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

    Science.gov (United States)

    Tian, Ye; Zetterling, Carl-Mikael

    2017-09-01

    This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

  9. 3D micro-lenses for free space intra-chip coupling in photonic-integrated circuits (Conference Presentation)

    Science.gov (United States)

    Thomas, Robert; Williams, Gwilym I.; Ladak, Sam; Smowton, Peter M.

    2017-02-01

    The integration of multiple optical elements on a common substrate to create photonic integrated circuits (PIC) has been successfully applied in: fibre-optic communications, photonic computing and optical sensing. The push towards III-Vs on silicon promises a new generation of integrated devices that combine the advantages of both integrated electronics and optics in a single substrate. III-V edge emitting laser diodes offer high efficiency and low threshold currents making them ideal candidates for the optically active elements of the next generation of PICs. Nevertheless, the highly divergent and asymmetric beam shapes intrinsic to these devices limits the efficiency with which optical elements can be free space coupled intra-chip; a capability particularly desirable for optical sensing applications e.g. [1]. Furthermore, the monolithic nature of the integrated approach prohibits the use of macroscopic lenses to improve coupling. However, with the advent of 3D direct laser writing, three dimensional lenses can now be manufactured on a microscopic-scale [2], making the use of micro-lens technology for enhanced free space coupling of integrated optical elements feasible. Here we demonstrate the first use of 3D micro-lenses to improve the coupling efficiency of monolithically integrated lasers. Fabricated from IP-dip photoresist using a Nanoscribe GmbH 3D lithography tool, the lenses are embedded directly onto a structured GaInP/AlGaInP substrate containing arrays of ridge lasers free space coupled to one another via a 200 μm air gap. We compare the coupling efficiency of these lasers with and without micro-lenses through photo-voltage and beam profile measurements and discuss optimisation of lens design.

  10. Integrating anatomy and function for zebrafish circuit analysis.

    Science.gov (United States)

    Arrenberg, Aristides B; Driever, Wolfgang

    2013-01-01

    Due to its transparency, virtually every brain structure of the larval zebrafish is accessible to light-based interrogation of circuit function. Advanced stimulation techniques allow the activation of optogenetic actuators at different resolution levels, and genetically encoded calcium indicators report the activity of a large proportion of neurons in the CNS. Large datasets result and need to be analyzed to identify cells that have specific properties-e.g., activity correlation to sensory stimulation or behavior. Advances in three-dimensional (3D) functional mapping in zebrafish are promising; however, the mere coordinates of implicated neurons are not sufficient. To comprehensively understand circuit function, these functional maps need to be placed into the proper context of morphological features and projection patterns, neurotransmitter phenotypes, and key anatomical landmarks. We discuss the prospect of merging functional and anatomical data in an integrated atlas from the perspective of our work on long-range dopaminergic neuromodulation and the oculomotor system. We propose that such a resource would help researchers to surpass current hurdles in circuit analysis to achieve an integrated understanding of anatomy and function.

  11. High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.

    Science.gov (United States)

    Acconcia, Giulia; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo

    2016-08-01

    Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.

  12. Design automation for integrated nonlinear logic circuits (Conference Presentation)

    Science.gov (United States)

    Van Vaerenbergh, Thomas; Pelc, Jason; Santori, Charles; Bose, Ranojoy; Kielpinski, Dave; Beausoleil, Raymond G.

    2016-05-01

    A key enabler of the IT revolution of the late 20th century was the development of electronic design automation (EDA) tools allowing engineers to manage the complexity of electronic circuits with transistor counts now reaching into the billions. Recently, we have been developing large-scale nonlinear photonic integrated logic circuits for next generation all-optical information processing. At this time a sufficiently powerful EDA-style software tool chain to design this type of complex circuits does not yet exist. Here we describe a hierarchical approach to automating the design and validation of photonic integrated circuits, which can scale to several orders of magnitude higher complexity than the state of the art. Most photonic integrated circuits developed today consist of a small number of components, and only limited hierarchy. For example, a simple photonic transceiver may contain on the order of 10 building-block components, consisting of grating couplers for photonic I/O, modulators, and signal splitters/combiners. Because this is relatively easy to lay out by hand (or simple script) existing photonic design tools have relatively little automation in comparison to electronics tools. But demonstrating all-optical logic will require significantly more complex photonic circuits containing up to 1,000 components, hence becoming infeasible to design manually. Our design framework is based off Python-based software from Luceda Photonics which provides an environment to describe components, simulate their behavior, and export design files (GDS) to foundries for fabrication. At a fundamental level, a photonic component is described as a parametric cell (PCell) similarly to electronics design. PCells are described by geometric characteristics of their layout. A critical part of the design framework is the implementation of PCells as Python objects. PCell objects can then use inheritance to simplify design, and hierarchical designs can be made by creating composite

  13. SEMICONDUCTOR INTEGRATED CIRCUITS: Soft error generation analysis in combinational logic circuits

    Science.gov (United States)

    Qian, Ding; Yu, Wang; Rong, Luo; Hui, Wang; Huazhong, Yang

    2010-09-01

    Reliability is expected to become a big concern in future deep sub-micron integrated circuits design. Soft error rate (SER) of combinational logic is considered to be a great reliability problem. Previous SER analysis and models indicated that glitch width has a great impact on electrical masking and latch window masking effects, but they failed to achieve enough insights. In this paper, an analytical glitch generation model is proposed. This model shows that after an inflexion point the collected charge has an exponential relationship with glitch duration and the model only introduces an estimation error of on average 2.5%.

  14. Integrated Circuit Design in US High-Energy Physics

    CERN Document Server

    De Geronimo, G; Bebek, C; Garcia-Sciveres, M; Von der Lippe, H; Haller, G; Grillo, A A; Newcomer, M

    2013-01-01

    This whitepaper summarizes the status, plans, and challenges in the area of integrated circuit design in the United States for future High Energy Physics (HEP) experiments. It has been submitted to CPAD (Coordinating Panel for Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US Workshop on IC Design for High Energy Physics, HEPIC2013 was held May 30 to June 1, 2013 at Lawrence Berkeley National Laboratory (LBNL). A draft of the whitepaper was distributed to the attendees before the workshop, the content was discussed at the meeting, and this document is the resulting final product. The scope of the whitepaper includes the following topics: Needs for IC technologies to enable future experiments in the three HEP frontiers Energy, Cosmic and Intensity Frontiers; Challenges in the different technology and circuit design areas and the related R&D needs; Motivation for using different fabrication technologies...

  15. Monocrystalline silicon used for integrated circuits: still on the way

    Institute of Scientific and Technical Information of China (English)

    Jia-he CHEN; De-ren YANG; Duan-lin QUE

    2008-01-01

    With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impur-ities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insu-lator) are reviewed. It is proposed that the silicon man-ufacturing infrastructure could still meet the increasingly stringent requirements arising from ULSI circuits and will expand Moore's law into a couple of decades.

  16. First system experiments with a monolithically integrated tunable polarization diversity heterodyne receiver OEIC on InP

    Science.gov (United States)

    Hilbk, U.; Hermes, T.; Meissner, P.; Westphal, F. J.; Jacumeit, G.; Stenzel, R.; Unterboersch, G.

    1995-01-01

    System performance of an integrated polarization diversity heterodyne receiver optoelectronic IC (OEIC) is reported. The OEIC is monolithically integrated on InP. It includes a tunable 4 section DBR laser (quasi continuous tuning range 3.5 nm) and balanced photodiodes. The packaged OEIC is supplied with a fiber pigtail. Stable and polarization independent operation is achieved without any tendency for a bit error floor. The sensitivity at 1550.2 nm is -33.5 dBm at a bitrate of 140 Mbit/s. The performance of the OEIC based receiver is verified by operating in an experimental OFDM-TV distribution system with 4 channels.

  17. Adaptive Voltage Management Enabling Energy Efficiency in Nanoscale Integrated Circuits

    Science.gov (United States)

    Shapiro, Alexander E.

    Battery powered devices emphasize energy efficiency in modern sub-22 nm CMOS microprocessors rendering classic power reduction solutions not sufficient. Classical solutions that reduce power consumption in high performance integrated circuits are superseded with novel and enhanced power reduction techniques to enable the greater energy efficiency desired in modern microprocessors and emerging mobile platforms. Dynamic power consumption is reduced by operating over a wide range of supply voltages. This region of operation is enabled by a high speed and power efficient level shifter which translates low voltage digital signals to higher voltages (and vice versa), a key component that enables communication among circuits operating at different voltage levels. Additionally, optimizing the wide supply voltage range of signals propagating across long interconnect enables greater energy savings. A closed-form delay model supporting wide voltage range is developed to enable this capability. The model supports an ultra-wide voltage range from nominal voltages to subthreshold voltages, and a wide range of repeater sizes. To mitigate the drawback of lower operating speed at reduced supply voltages, the high performance exhibited by MOS current mode logic technology is exploited. High performance and energy efficient circuits are enabled by combining this logic style with power efficient near threshold circuits. Many-core systems that operate at high frequencies and process highly parallel workloads benefit from this combination of MCML with NTC. Due to aggressive scaling, static power consumption can in some cases overshadow dynamic power. Techniques to lower leakage power have therefore become an important objective in modern microprocessors. To address this issue, an adaptive power gating technique is proposed. This technique utilizes high levels of granularity to save additional leakage power when a circuit is active as opposed to standard power gating that saves static

  18. Lithography for enabling advances in integrated circuits and devices.

    Science.gov (United States)

    Garner, C Michael

    2012-08-28

    Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

  19. Metamaterial CRLH Antennas on Silicon Substrate for Millimeter-Wave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Gheorghe Ioan Sajin

    2012-01-01

    Full Text Available The paper presents two composite right/left-handed (CRLH coplanar waveguide (CPW zeroth-order resonant (ZOR antennas which were designed, processed, and electrically characterized for applications in the millimetric wave frequency range. Two CRLH antennas were developed for f=27 GHz and f=38.5, GHz, respectively. The CRLH antenna on f=27 GHz shows a return loss of RL<−18.78 dB at f=26.88 GHz. The −3 dB radiation characteristic beamwidth was approximately 37° and the gain was Gi=2.82 dBi. The CRLH antenna on f=38.5 GHz has a return loss of RL<−38.5 dB at f=38.82 GHz and the −3 dB radiation characteristic beamwidth of approximately 17°. The gains were Gi=1.08 dBi at f=38 GHz and Gi=1.2 dBi at f=38.6 GHz. The maximum measured gain was Gi=1.75 dBi at f=38.2 GHz. It is, upon the authors' knowledge, the first report of millimeter wave CRLH antennas on silicon substrate in CPW technique for use in mm-wave monolithic integrated circuit.

  20. High-precision analog circuit technology for power supply integrated circuits; Dengen IC yo koseido anarogu kairo gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamori, A.; Suzuki, T.; Mizoe, K. [Fuji Electric Corporate Research and Development,Ltd., Kanagawa (Japan)

    2000-08-10

    With the recent rapid spread of portable electronic appliances, specification requirements such as compact power supply and long operation with batteries have become severer. Power supply ICs (integrated circuits) are required to reduce power consumption in the circuit and perform high-precision control. To meet these requirements, Fuji Electric develops high-precision CMOS (complementary metal-oxide semiconductor) analog technology. This paper describes three analog circuit technologies of a voltage reference, an operational amplifier and a comparator as circuit components particularly important for the precision of power supply ICs. (author)

  1. 77 FR 66481 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions; Notice...

    Science.gov (United States)

    2012-11-05

    ... COMMISSION Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions; Notice..., and the sale within the United States after importation of certain integrated circuits, chipsets, and... Circuits, Chipsets, and Products Containing Same Including Televisions, Inv. No. 337-TA-786. On August...

  2. Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

    Science.gov (United States)

    Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

    2016-01-01

    Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification.

  3. Analysis and Evaluation of Statistical Models for Integrated Circuits Design

    Directory of Open Access Journals (Sweden)

    Sáenz-Noval J.J.

    2011-10-01

    Full Text Available Statistical models for integrated circuits (IC allow us to estimate the percentage of acceptable devices in the batch before fabrication. Actually, Pelgrom is the statistical model most accepted in the industry; however it was derived from a micrometer technology, which does not guarantee reliability in nanometric manufacturing processes. This work considers three of the most relevant statistical models in the industry and evaluates their limitations and advantages in analog design, so that the designer has a better criterion to make a choice. Moreover, it shows how several statistical models can be used for each one of the stages and design purposes.

  4. Noise estimation for deep sub-micron integrated circuits

    Institute of Scientific and Technical Information of China (English)

    陈彬; 杨华中; 汪惠

    2001-01-01

    Noise analysis and avoidance are an increasingly critical step in the design of deep submicron (DSM) integrated circuits (Ics). The crosstalk between neighboring interconnects gradually becomes the main noise sources in DSM Ics. We introduce an efficient and accurate noise-evaluation method for capacitively coupled nets of Ics. The method holds for a victim net with arbitrary number of aggressive nets under ramp input excitation. For common RC nets extracted by electronic design automation (EDA) tools, the deviation between our method and HSPICE is under 10%.

  5. Investigation of Optimal Integrated Circuit Raster Image Vectorization Method

    Directory of Open Access Journals (Sweden)

    Leonas Jasevičius

    2011-03-01

    Full Text Available Visual analysis of integrated circuit layer requires raster image vectorization stage to extract layer topology data to CAD tools. In this paper vectorization problems of raster IC layer images are presented. Various line extraction from raster images algorithms and their properties are discussed. Optimal raster image vectorization method was developed which allows utilization of common vectorization algorithms to achieve the best possible extracted vector data match with perfect manual vectorization results. To develop the optimal method, vectorized data quality dependence on initial raster image skeleton filter selection was assessed.Article in Lithuanian

  6. The FE-I4 pixel readout integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Sciveres, M., E-mail: mgarcia-sciveres@bl.gov [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arutinov, D.; Barbero, M. [University of Bonn, Bonn (Germany); Beccherle, R. [Istituto Nazionale di Fisica Nucleare Sezione di Genova, Genova (Italy); Dube, S.; Elledge, D. [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Fleury, J. [Laboratoire de l' Accelerateur Lineaire, Orsay (France); Fougeron, D.; Gensolen, F. [Centre de Physique des Particules de Marseille, Marseille (France); Gnani, D. [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Gromov, V. [Nationaal Instituut voor Subatomaire Fysica, Amsterdam (Netherlands); Hemperek, T.; Karagounis, M. [University of Bonn, Bonn (Germany); Kluit, R. [Nationaal Instituut voor Subatomaire Fysica, Amsterdam (Netherlands); Kruth, A. [University of Bonn, Bonn (Germany); Mekkaoui, A. [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Menouni, M. [Centre de Physique des Particules de Marseille, Marseille (France); Schipper, J.-D. [Nationaal Instituut voor Subatomaire Fysica, Amsterdam (Netherlands)

    2011-04-21

    A new pixel readout integrated circuit denominated FE-I4 is being designed to meet the requirements of ATLAS experiment upgrades. It will be the largest readout IC produced to date for particle physics applications, filling the maximum allowed reticle area. This will significantly reduce the cost of future hybrid pixel detectors. In addition, FE-I4 will have smaller pixels and higher rate capability than the present generation of LHC pixel detectors. Design features are described along with simulation and test results, including low power and high rate readout architecture, mixed signal design strategy, and yield hardening.

  7. CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION

    Directory of Open Access Journals (Sweden)

    V. A. Bondarev

    2005-01-01

    Full Text Available Analytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual formal mathematical approaches, new functions are determined in the process of investigation of real physical models. Algorithms involve some important relations from thermodynamics of irreversible processes and also variational thermodynamic functionals that were previously obtained by the author for transfer processes. Calculations considerably reduce the time required for development of new integrated circuits

  8. Cycles of self-pulsations in a photonic integrated circuit.

    Science.gov (United States)

    Karsaklian Dal Bosco, Andreas; Kanno, Kazutaka; Uchida, Atsushi; Sciamanna, Marc; Harayama, Takahisa; Yoshimura, Kazuyuki

    2015-12-01

    We report experimentally on the bifurcation cascade leading to the appearance of self-pulsation in a photonic integrated circuit in which a laser diode is subjected to delayed optical feedback. We study the evolution of the self-pulsing frequency with the increase of both the feedback strength and the injection current. Experimental observations show good qualitative accordance with numerical results carried out with the Lang-Kobayashi rate equation model. We explain the mechanism underlying the self-pulsations by a phenomenon of beating between successive pairs of external cavity modes and antimodes.

  9. Integrated circuit authentication hardware Trojans and counterfeit detection

    CERN Document Server

    Tehranipoor, Mohammad; Zhang, Xuehui

    2013-01-01

    This book describes techniques to verify the authenticity of integrated circuits (ICs). It focuses on hardware Trojan detection and prevention and counterfeit detection and prevention. The authors discuss a variety of detection schemes and design methodologies for improving Trojan detection techniques, as well as various attempts at developing hardware Trojans in IP cores and ICs. While describing existing Trojan detection methods, the authors also analyze their effectiveness in disclosing various types of Trojans, and demonstrate several architecture-level solutions. 

  10. Transient-induced latchup in CMOS integrated circuits

    CERN Document Server

    Ker, Ming-Dou

    2009-01-01

    "Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description.

  11. Stainless Steel NaK Circuit Integration and Fill Submission

    Science.gov (United States)

    Garber, Anne E.

    2006-01-01

    The Early Flight Fission Test Facilities (EFF-TF) team has been tasked by the Marshall Space Flight Center Nuclear Systems Office to design, fabricate, and test an actively pumped alkali metal flow circuit. The system, which was originally designed to hold a eutectic mixture of sodium potassium (NaK), was redesigned to hold lithium; but due to a shift in focus, it is once again being prepared for use with NaK. Changes made to the actively pumped, high temperature loop include the replacement of the expansion reservoir, addition of remotely operated valves, and modification of the support table. Basic circuit components include: reactor segment, NaK to gas heat exchanger, electromagnetic (EM) liquid metal pump, load/drain reservoir, expansion reservoir, instrumentation, and a spill reservoir. A 37-pin partial-array core (pin and flow path dimensions are the same as those in a full design) was selected for fabrication and test. This document summarizes the integration and fill of the pumped liquid metal NaK flow circuit.

  12. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 方志刚; 等

    2002-01-01

    The novel integrated circuit(IC) temperature sensor presented in this paper works similarly as a two-terminal Zener,has breakdown voltage directly proportional to Kelvin temperature at 10mV/℃,with typical error of less tha ±1.0℃ over a temperature range from-50℃to +120℃ .In addition to all the features that conventional IC temperature sensors have,the new device also has very low static power dissipation(0.5mW),low output impedance(less than 1Ω),execllent stability,high reproducibility,and high precision.The sensor's circuit design and layout are discussed in detail.Applications of the sensor include almost and type of temperature sensing over the range of -50℃-+125℃。The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy.Due to the excellent performance and low cost of this sensor.more application of the sensor over wide temperature range are expected.

  13. Mode-locked InAs/InP quantum-dash-based DBR laser with monolithically integrated SOA

    Science.gov (United States)

    Joshi, Siddharth; Chimot, Nicolas; Barbet, Sophie; Accard, Alain; Lelarge, François

    2014-02-01

    We present the first demonstration of InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits. The laser cavity is closed using a specific Bragg reflector without compromising the mode-locking performance of the laser. This enables the integration of single-section mode- locked laser on photonic integrated circuits as on-chip frequency comb source. As a demonstration, we integrate the Fabry Perot laser with a semiconductor optical amplifier. Such a device could be used for amplification or modulation of the frequency generated comb. We thus investigate the device operation to obtain a NRZ modulated comb.

  14. Ultra-low power integrated circuit design circuits, systems, and applications

    CERN Document Server

    Li, Dongmei; Wang, Zhihua

    2014-01-01

    This book describes the design of CMOS circuits for ultra-low power consumption including analog, radio frequency (RF), and digital signal processing circuits (DSP). The book addresses issues from circuit and system design to production design, and applies the ultra-low power circuits described to systems for digital hearing aids and capsule endoscope devices. Provides a valuable introduction to ultra-low power circuit design, aimed at practicing design engineers; Describes all key building blocks of ultra-low power circuits, from a systems perspective; Applies circuits and systems described to real product examples such as hearing aids and capsule endoscopes.

  15. Design of monoliths through their mechanical properties.

    Science.gov (United States)

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  16. Bipolar integrated circuits in SiC for extreme environment operation

    Science.gov (United States)

    Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B. Gunnar; Mardani, Shabnam; Norström, Hans; Rusu, Ana; Saveda Suvanam, Sethu; Tian, Ye; Östling, Mikael

    2017-03-01

    Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

  17. RELATIONAL THEORY APPLICATION FOR OPTIMAL DESIGN OF INTEGRATED CIRCUITS

    Directory of Open Access Journals (Sweden)

    D. V. Demidov

    2014-09-01

    Full Text Available This paper deals with a method of relational theory adaptation for integrated circuits CAD systems. A new algorithm is worked out for optimal search of implicit Don’t Care values for combinational multiple-level digital circuits. The algorithm is described in terms of the adapted relational theory that gives the possibility for a very simple algorithm description for both intuitive understanding and formal analysis. The proposed method makes it possible to apply progressive experience of relational databases in efficient implementation of relational algebra operations (including distributed ones. Comparative analysis of the proposed algorithm and a classic one for optimal search of implicit Don’t Cares is carried out. The analysis has proved formal correctness of the proposed algorithm and its considerably less worst-case complexity. The search of implicit Don’t Care values in the integrated circuits design makes it easier to optimize such characteristics of IC as chip area, power, verifiability and reliability. However, the classic algorithm for optimal search of implicit Don’t Care values is not used in practice due to its very high computational complexity. Application of algorithms for sub-optimal search doesn’t give the possibility to realize the potential of IC optimization to the full. Implementation of the proposed algorithm in IC CAD (a.k.a., EDA systems is adequate due to much lower computational complexity, and potentially makes it possible to improve the quality-development time ratio of IC (chip area, power, verifiability and reliability. Developed method gives the possibility for creation of distributed EDA system with higher computational power and, consequently, for design automation of more complex IC.

  18. Monolithic liquid-chromatography columns for protein analysisprotein digest separation and integrated systems

    NARCIS (Netherlands)

    van de Meent, M.H.M.

    2010-01-01

    The objectives of the research described in this thesis are to evaluate the applicability of both silica-based and polymeric monolithic columns for protein analysis. The first part describes investigations into the effects of column length and stationary-phase chemistry on the separation of protein

  19. Development of optical packet and circuit integrated ring network testbed.

    Science.gov (United States)

    Furukawa, Hideaki; Harai, Hiroaki; Miyazawa, Takaya; Shinada, Satoshi; Kawasaki, Wataru; Wada, Naoya

    2011-12-12

    We developed novel integrated optical packet and circuit switch-node equipment. Compared with our previous equipment, a polarization-independent 4 × 4 semiconductor optical amplifier switch subsystem, gain-controlled optical amplifiers, and one 100 Gbps optical packet transponder and seven 10 Gbps optical path transponders with 10 Gigabit Ethernet (10GbE) client-interfaces were newly installed in the present system. The switch and amplifiers can provide more stable operation without equipment adjustments for the frequent polarization-rotations and dynamic packet-rate changes of optical packets. We constructed an optical packet and circuit integrated ring network testbed consisting of two switch nodes for accelerating network development, and we demonstrated 66 km fiber transmission and switching operation of multiplexed 14-wavelength 10 Gbps optical paths and 100 Gbps optical packets encapsulating 10GbE frames. Error-free (frame error rate < 1×10(-4)) operation was achieved with optical packets of various packet lengths and packet rates, and stable operation of the network testbed was confirmed. In addition, 4K uncompressed video streaming over OPS links was successfully demonstrated.

  20. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-01-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  1. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-05-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  2. Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3-micrometer wavelength

    Science.gov (United States)

    Gerlach, Philipp; Peschke, Martin; Wenger, Thomas; Saravanan, Brem K.; Hanke, Christian; Lorch, Steffen; Michalzik, Rainer

    2006-04-01

    We report on the design and experimental results of monolithically integrated optoelectronic devices containing distributed feedback (DFB) laser, electroabsorption modulator (EAM), and semiconductor optical amplifier (SOA). Common InGaAlAs multiple quantum well (MQW) layers are used in all device sections. The incorporation of local lateral metal gratings in the DFB section enables device fabrication by single-step epitaxial growth. The emission wavelength is λ=1.3 micrometer. More than 2 mW single-mode fiber-coupled output power as well as 10 dB/2 V static extinction ratio have been achieved. Modulation experiments clearly show 10 Gbit/s capability.

  3. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  4. Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Ribot, H.; Sansonetti, P.; Brandon, J.; Carre, M.; Menigaux, L.; Azoulay, R.; Bouadma, N.

    1989-02-06

    Monolithic integration of a quarter-circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45-..mu..m-long straight part and a quarter circle with a curvature radius of 150 ..mu..m. The component exhibits a threshold current of 50 mA in a pulsed regime. A 10 mW emission is measured from a 415-..mu..m-long tangential straight waveguide for an injection current of 140 mA.

  5. Graphene/Si CMOS hybrid hall integrated circuits.

    Science.gov (United States)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-07

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  6. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    Science.gov (United States)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  7. InP-based monolithically integrated 1310/1550nm diplexer/triplexer

    Science.gov (United States)

    Silfvenius, C.; Swillo, M.; Claesson, J.; Forsberg, E.; Akram, N.; Chacinski, M.; Thylén, L.

    2008-11-01

    Multiple streams of high definition television (HDTV) and improved home-working infrastructure are currently driving forces for potential fiber to the home (FTTH) customers [1]. There is an interest to reduce the cost and physical size of the FTTH equipment. The current fabrication methods have reached a cost minimum. We have addressed the costchallenge by developing 1310/(1490)/1550nm bidirectional diplexers, by monolithic seamless integration of lasers, photodiodes and wavelength division multiplexing (WDM) couplers into one single InP-based device. A 250nm wide optical gain profile covers the spectrum from 1310 to 1550nm and is the principal building block. The device fabrication is basically based on the established configuration of using split-contacts on continuos waveguides. Optical and electrical cross-talks are further addressed by using a Y-configuration to physically separate the components from each other and avoid inline configurations such as when the incoming signal travels through the laser component or vice versa. By the eliminated butt-joint interfaces which can reflect light between components or be a current leakage path and by leaving optically absorbing (unpumped active) material to surround the components to absorb spontaneous emission and nonintentional reflections the devices are optically and electrically isolated from each other. Ridge waveguides (RWG) form the waveguides and which also maintain the absorbing material between them. The WDM functionality is designed for a large optical bandwidth complying with the wide spectral range in FTTH applications and also reducing the polarization dependence of the WDM-coupler. Lasing is achieved by forming facet-free, λ/4-shifted, DFB (distributed feedback laser) lasers emitting directly into the waveguide. The photodiodes are waveguide photo-diodes (WGPD). Our seamless technology is also able to array the single channel diplexers to 4 to 12 channel diplexer arrays with 250μm fiber port

  8. Removal of Gross Air Embolization from Cardiopulmonary Bypass Circuits with Integrated Arterial Line Filters: A Comparison of Circuit Designs.

    Science.gov (United States)

    Reagor, James A; Holt, David W

    2016-03-01

    Advances in technology, the desire to minimize blood product transfusions, and concerns relating to inflammatory mediators have lead many practitioners and manufacturers to minimize cardiopulmonary bypass (CBP) circuit designs. The oxygenator and arterial line filter (ALF) have been integrated into one device as a method of attaining a reduction in prime volume and surface area. The instructions for use of a currently available oxygenator with integrated ALF recommends incorporating a recirculation line distal to the oxygenator. However, according to an unscientific survey, 70% of respondents utilize CPB circuits incorporating integrated ALFs without a path of recirculation distal to the oxygenator outlet. Considering this circuit design, the ability to quickly remove a gross air bolus in the blood path distal to the oxygenator may be compromised. This in vitro study was designed to determine if the time required to remove a gross air bolus from a CPB circuit without a path of recirculation distal to the oxygenator will be significantly longer than that of a circuit with a path of recirculation distal to the oxygenator. A significant difference was found in the mean time required to remove a gross air bolus between the circuit designs (p = .0003). Additionally, There was found to be a statistically significant difference in the mean time required to remove a gross air bolus between Trial 1 and Trials 4 (p = .015) and 5 (p =.014) irrespective of the circuit design. Under the parameters of this study, a recirculation line distal to an oxygenator with an integrated ALF significantly decreases the time it takes to remove an air bolus from the CPB circuit and may be safer for clinical use than the same circuit without a recirculation line.

  9. Analysis and characterizations of planar transmission structures and components for superconducting and monolithic integrated circuits

    Science.gov (United States)

    Itoh, Tatsuo

    1992-01-01

    The research effort was continued to design and characterize superconducting transmission line structures. The research during this period was concentrated on the implementation of a superconductor into coplanar waveguide structures. First, the superconducting coplanar waveguide was examined, and compared with a superconducting microstrip line in terms of loss characteristics and their design aspects. Then, the research was carried on the design and characterization of the coplanar waveguide family in the packaging environment. The transition between the coaxial line to the conductor backed coplanar waveguide was also designed for the measurement of the superconducting conductor backed coplanar waveguide.

  10. Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25-micro m Qorvo Process

    Science.gov (United States)

    2017-07-27

    250-µm-wide mesa resistor was used for the 100- ohm isolation resistor. Since GaN-on-SiC is an excellent thermal conductor, the isolation resistor...characteristic impedance of 70.7 ohm and an electrical length of 90° at the design frequency plus a 100- ohm isolation resistor between the 2 equal power split

  11. Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications

    Directory of Open Access Journals (Sweden)

    R. Makri

    2002-01-01

    quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.

  12. Solution-based photodetectors for monolithically integrated low-cost short-wave infrared focal plane arrays

    Science.gov (United States)

    Heves, Emre; Kayahan, Huseyin; Gurbuz, Yasar

    2013-05-01

    In this work, PbS Colloidal Quantum Dots (CQD) based photodiodes are realized on both silicon substrates and on the replicas of the ROICs in order to demonstrate fully integrated FPAs. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimization of IC integrable process steps resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies such as 32% is achieved for photodiodes on Si substrates and high responsivities up to 5,73 A/W is achieved for photodiodes on ROIC replicas. Also these detectors achieved very high normalized detectivities such as; 1.36 x 1011 Jones and 1.42 x 1012 Jones under 1V and 2V reverse bias respectively, which is close to conventional InGaAS SWIR detectors.

  13. 77 FR 57589 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions...

    Science.gov (United States)

    2012-09-18

    ... COMMISSION Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions... found that those Zoran products that were adjudicated in Integrated Circuits I are precluded under the... recommended a limited exclusion order barring entry of Zoran's and MediaTek's infringing integrated...

  14. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  15. Integrated circuit for processing a low-frequency signal from a seismic detector

    Energy Technology Data Exchange (ETDEWEB)

    Malashevich, N. I.; Roslyakov, A. S.; Polomoshnov, S. A., E-mail: S.Polomoshnov@tsen.ru; Fedorov, R. A. [Research and Production Complex ' Technological Center' of the Moscow Institute of Electronic Technology (Russian Federation)

    2011-12-15

    Specific features for the detection and processing of a low-frequency signal from a seismic detector are considered in terms of an integrated circuit based on a large matrix crystal of the 5507 series. This integrated circuit is designed for the detection of human movements. The specific features of the information signal, obtained at the output of the seismic detector, and the main characteristics of the integrated circuit and its structure are reported.

  16. Minimizing the area required for time constants in integrated circuits

    Science.gov (United States)

    Lyons, J. C.

    1972-01-01

    When a medium- or large-scale integrated circuit is designed, efforts are usually made to avoid the use of resistor-capacitor time constant generators. The capacitor needed for this circuit usually takes up more surface area on the chip than several resistors and transistors. When the use of this network is unavoidable, the designer usually makes an effort to see that the choice of resistor and capacitor combinations is such that a minimum amount of surface area is consumed. The optimum ratio of resistance to capacitance that will result in this minimum area is equal to the ratio of resistance to capacitance which may be obtained from a unit of surface area for the particular process being used. The minimum area required is a function of the square root of the reciprocal of the products of the resistance and capacitance per unit area. This minimum occurs when the area required by the resistor is equal to the area required by the capacitor.

  17. A neural circuit architecture for angular integration in Drosophila.

    Science.gov (United States)

    Green, Jonathan; Adachi, Atsuko; Shah, Kunal K; Hirokawa, Jonathan D; Magani, Pablo S; Maimon, Gaby

    2017-06-01

    Many animals keep track of their angular heading over time while navigating through their environment. However, a neural-circuit architecture for computing heading has not been experimentally defined in any species. Here we describe a set of clockwise- and anticlockwise-shifting neurons in the Drosophila central complex whose wiring and physiology provide a means to rotate an angular heading estimate based on the fly's angular velocity. We show that each class of shifting neurons exists in two subtypes, with spatiotemporal activity profiles that suggest different roles for each subtype at the start and end of tethered-walking turns. Shifting neurons are required for the heading system to properly track the fly's heading in the dark, and stimulation of these neurons induces predictable shifts in the heading signal. The central features of this biological circuit are analogous to those of computational models proposed for head-direction cells in rodents and may shed light on how neural systems, in general, perform integration.

  18. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 赵梦恋; 严晓浪; 方志刚

    2002-01-01

    The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

  19. A novel CMOS-compatible, monolithically integrated line-scan hyperspectral imager covering the VIS-NIR range

    Science.gov (United States)

    Gonzalez, Pilar; Tack, Klaas; Geelen, Bert; Masschelein, Bart; Charle, Wouter; Vereecke, Bart; Lambrechts, Andy

    2016-05-01

    Imec has developed a process for the monolithic integration of optical filters on top of CMOS image sensors, leading to compact, cost-efficient and faster hyperspectral cameras. Different prototype sensors are available, most notably a 600- 1000 nm line-scan imager, and two mosaic sensors: a 4x4 VIS (470-620 nm range) and a 5x5 VNIR (600-1000 nm). In response to the users' demand for a single sensor able to cover both the VIS and NIR ranges, further developments have been made to enable more demanding applications. As a result, this paper presents the latest addition to imec's family of monolithically-integrated hyperspectral sensors: a line scan sensor covering the range 470-900 nm. This new prototype sensor can acquire hyperspectral image cubes of 2048 pixels over 192 bands (128 bands for the 600- 900 nm range, and 64 bands for the 470-620 nm range) at 340 cubes per second for normal machine vision illumination levels.

  20. Enabling the Internet of Things from integrated circuits to integrated systems

    CERN Document Server

    2017-01-01

    This book offers the first comprehensive view on integrated circuit and system design for the Internet of Things (IoT), and in particular for the tiny nodes at its edge. The authors provide a fresh perspective on how the IoT will evolve based on recent and foreseeable trends in the semiconductor industry, highlighting the key challenges, as well as the opportunities for circuit and system innovation to address them. This book describes what the IoT really means from the design point of view, and how the constraints imposed by applications translate into integrated circuit requirements and design guidelines. Chapter contributions equally come from industry and academia. After providing a system perspective on IoT nodes, this book focuses on state-of-the-art design techniques for IoT applications, encompassing the fundamental sub-systems encountered in Systems on Chip for IoT: ultra-low power digital architectures and circuits low- and zero-leakage memories (including emerging technologies) circuits for hardwar...

  1. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Science.gov (United States)

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  2. Applications of Data Mining in Integrated Circuits Manufacturing

    Directory of Open Access Journals (Sweden)

    Sidda Reddy Kurakula

    2014-09-01

    Full Text Available Integrated circuits (a.k.a chips or IC’s are some of the most complex devices manufactured. Making chips is a complex process requiring hundreds of precisely controlled steps such as film deposition, etching and patterning of various materials until the final device structure is realized. Also, each chip goes through a huge number of complicated tests and inspection steps to ensure quality. In IC manufacturing, yield is defined as the percentage of chips in a finished wafer that pass all tests and function properly. Yield improvement translates directly into increased revenues. A humongous amount of data (Terabytes per day is logged from the equipment in the fab. This paper describes some applications of advanced data mining techniques used by chip makers and equipment suppliers in order to improve yield, match equipment, increase equipment output and also to predict the change in equipment performance before and after maintenance activities.

  3. Wireless Neural Recording With Single Low-Power Integrated Circuit

    Science.gov (United States)

    Harrison, Reid R.; Kier, Ryan J.; Chestek, Cynthia A.; Gilja, Vikash; Nuyujukian, Paul; Ryu, Stephen; Greger, Bradley; Solzbacher, Florian; Shenoy, Krishna V.

    2010-01-01

    We present benchtop and in vivo experimental results from an integrated circuit designed for wireless implantable neural recording applications. The chip, which was fabricated in a commercially available 0.6-μm 2P3M BiCMOS process, contains 100 amplifiers, a 10-bit analog-to-digital converter (ADC), 100 threshold-based spike detectors, and a 902–928 MHz frequency-shift-keying (FSK) transmitter. Neural signals from a selected amplifier are sampled by the ADC at 15.7 kSps and telemetered over the FSK wireless data link. Power, clock, and command signals are sent to the chip wirelessly over a 2.765-MHz inductive (coil-to-coil) link. The chip is capable of operating with only two off-chip components: a power/command receiving coil and a 100-nF capacitor. PMID:19497825

  4. Plasmonic nanopatch array for optical integrated circuit applications.

    Science.gov (United States)

    Qu, Shi-Wei; Nie, Zai-Ping

    2013-11-08

    Future plasmonic integrated circuits with the capability of extremely high-speed data processing at optical frequencies will be dominated by the efficient optical emission (excitation) from (of) plasmonic waveguides. Towards this goal, plasmonic nanoantennas, currently a hot topic in the field of plasmonics, have potential to bridge the mismatch between the wave vector of free-space photonics and that of the guided plasmonics. To manipulate light at will, plasmonic nanoantenna arrays will definitely be more efficient than isolated nanoantennas. In this article, the concepts of microwave antenna arrays are applied to efficiently convert plasmonic waves in the plasmonic waveguides into free-space optical waves or vice versa. The proposed plasmonic nanoantenna array, with nanopatch antennas and a coupled wedge plasmon waveguide, can also act as an efficient spectrometer to project different wavelengths into different directions, or as a spatial filter to absorb a specific wavelength at a specified incident angle.

  5. Plasmonic nanopatch array for optical integrated circuit applications

    Science.gov (United States)

    Qu, Shi-Wei; Nie, Zai-Ping

    2013-01-01

    Future plasmonic integrated circuits with the capability of extremely high-speed data processing at optical frequencies will be dominated by the efficient optical emission (excitation) from (of) plasmonic waveguides. Towards this goal, plasmonic nanoantennas, currently a hot topic in the field of plasmonics, have potential to bridge the mismatch between the wave vector of free-space photonics and that of the guided plasmonics. To manipulate light at will, plasmonic nanoantenna arrays will definitely be more efficient than isolated nanoantennas. In this article, the concepts of microwave antenna arrays are applied to efficiently convert plasmonic waves in the plasmonic waveguides into free-space optical waves or vice versa. The proposed plasmonic nanoantenna array, with nanopatch antennas and a coupled wedge plasmon waveguide, can also act as an efficient spectrometer to project different wavelengths into different directions, or as a spatial filter to absorb a specific wavelength at a specified incident angle. PMID:24201454

  6. Wireless neural recording with single low-power integrated circuit.

    Science.gov (United States)

    Harrison, Reid R; Kier, Ryan J; Chestek, Cynthia A; Gilja, Vikash; Nuyujukian, Paul; Ryu, Stephen; Greger, Bradley; Solzbacher, Florian; Shenoy, Krishna V

    2009-08-01

    We present benchtop and in vivo experimental results from an integrated circuit designed for wireless implantable neural recording applications. The chip, which was fabricated in a commercially available 0.6- mum 2P3M BiCMOS process, contains 100 amplifiers, a 10-bit analog-to-digital converter (ADC), 100 threshold-based spike detectors, and a 902-928 MHz frequency-shift-keying (FSK) transmitter. Neural signals from a selected amplifier are sampled by the ADC at 15.7 kSps and telemetered over the FSK wireless data link. Power, clock, and command signals are sent to the chip wirelessly over a 2.765-MHz inductive (coil-to-coil) link. The chip is capable of operating with only two off-chip components: a power/command receiving coil and a 100-nF capacitor.

  7. A kind of integrated method discuss of fOG signal processing circuit

    Science.gov (United States)

    Lu, Jun; Pan, Xin; Ying, Jiaju; Liu, Jie

    2014-12-01

    In view of the circuit miniaturization need in project application of fiber optic gyroscope(FOG), a new integrated technical scheme adopting system in package(SIP) for signal processing circuit of FOG was put forward. At first, the principle on signal processing circuit of FOG was analyzed, and the technical scheme adopting SIP based on low-temperature co-fired substrate technology was presented according to circuit characteristic and actual condition. Secondly, under the prerequisite of the concept introduction of SIP and LTCC, the SIP prototype of signal processing circuit of FOG was trialed produced,and it passed through the debug test. This SIP modular is an overall circuit complete integrated the signal processing circuit of FOG, and only a potentiometer and EPROM do not case outside. The testing results indicate that SIP is a kind of feasible scheme that carries out miniaturization for signal processing circuit of FOG.

  8. SDN architecture for optical packet and circuit integrated networks

    Science.gov (United States)

    Furukawa, Hideaki; Miyazawa, Takaya

    2016-02-01

    We have been developing an optical packet and circuit integrated (OPCI) network, which realizes dynamic optical path, high-density packet multiplexing, and flexible wavelength resource allocation. In the OPCI networks, a best-effort service and a QoS-guaranteed service are provided by employing optical packet switching (OPS) and optical circuit switching (OCS) respectively, and users can select these services. Different wavelength resources are assigned for OPS and OCS links, and the amount of their wavelength resources are dynamically changed in accordance with the service usage conditions. To apply OPCI networks into wide-area (core/metro) networks, we have developed an OPCI node with a distributed control mechanism. Moreover, our OPCI node works with a centralized control mechanism as well as a distributed one. It is therefore possible to realize SDN-based OPCI networks, where resource requests and a centralized configuration are carried out. In this paper, we show our SDN architecture for an OPS system that configures mapping tables between IP addresses and optical packet addresses and switching tables according to the requests from multiple users via a web interface. While OpenFlow-based centralized control protocol is coming into widespread use especially for single-administrative, small-area (LAN/data-center) networks. Here, we also show an interworking mechanism between OpenFlow-based networks (OFNs) and the OPCI network for constructing a wide-area network, and a control method of wavelength resource selection to automatically transfer diversified flows from OFNs to the OPCI network.

  9. Focused ion beam damage to MOS integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    FLEETWOOD,D.M.; CAMPBELL,ANN N.; HEMBREE,CHARLES E.; TANGYUNYONG,PAIBOON; JESSING,JEFFREY R.; SODEN,JERRY M.

    2000-05-10

    Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.

  10. Development of wide range charge integration application specified integrated circuit for photo-sensor

    Energy Technology Data Exchange (ETDEWEB)

    Katayose, Yusaku, E-mail: katayose@ynu.ac.jp [Department of Physics, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, Kanagawa 240-8501 (Japan); Ikeda, Hirokazu [Institute of Space and Astronautical Science (ISAS)/Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Tanaka, Manobu [National Laboratory for High Energy Physics, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Shibata, Makio [Department of Physics, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama, Kanagawa 240-8501 (Japan)

    2013-01-21

    A front-end application specified integrated circuit (ASIC) is developed with a wide dynamic range amplifier (WDAMP) to read-out signals from a photo-sensor like a photodiode. The WDAMP ASIC consists of a charge sensitive preamplifier, four wave-shaping circuits with different amplification factors and Wilkinson-type analog-to-digital converter (ADC). To realize a wider range, the integrating capacitor in the preamplifier can be changed from 4 pF to 16 pF by a two-bit switch. The output of a preamplifier is shared by the four wave-shaping circuits with four gains of 1, 4, 16 and 64 to adapt the input range of ADC. A 0.25-μm CMOS process (of UMC electronics CO., LTD) is used to fabricate the ASIC with four-channels. The dynamic range of four orders of magnitude is achieved with the maximum range over 20 pC and the noise performance of 0.46 fC + 6.4×10{sup −4} fC/pF. -- Highlights: ► A front-end ASIC is developed with a wide dynamic range amplifier. ► The ASIC consists of a CSA, four wave-shaping circuits and pulse-height-to-time converters. ► The dynamic range of four orders of magnitude is achieved with the maximum range over 20 pC.

  11. 77 FR 39510 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Determination Not...

    Science.gov (United States)

    2012-07-03

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Determination Not... the sale within the United States after importation of certain semiconductor integrated...

  12. 75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

    Science.gov (United States)

    2010-02-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice... importation, and sale within the United States after importation of certain semiconductor integrated...

  13. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2010-05-05

    ... COMMISSION In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products... semiconductor chips and products containing same by reason of infringement of certain claims of U.S. Patent Nos... certain large scale integrated circuit semiconductor chips or products containing the same that...

  14. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld;

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  15. Integrated optical and nuclear simulation of a monolithic LYSO:Ce based PET detector module

    Science.gov (United States)

    Játékos, B.; Patay, G.; Lőrincz, E.; Erdei, G.

    2017-05-01

    In the recent years new digital photon counter devices (also known as silicon photomultipliers, SiPMs) were designed and manufactured to be used specifically in positron emission tomography (PET) scanners. Finely pixelated SiPM arrays have opened new opportunities in PET detector development, such as the utilization of monolithic scintillator crystals. We worked out a simulation tool (SCOPE2) to assist the optimization and characterization of such PET detector modules. In the present paper we report the first application of SCOPE2 on the performance evaluation of a prototype PET detector module. The PET detector is based on monolithic LYSO:Ce scintillator crystal and a fully digital, silicon photon-counter, SPADnet-I. A new interface has been developed for SCOPE2 to access GATE simulation results. A combination of GATE and SCOPE2 was used to simulate excitation of the prototype PET detector with an electronically collimated γ -beam. Measurement results from the collimated γ-beam experiment were compared with the combined simulation. A good agreement was observed in the tendencies of total count spectrum and point of interaction distribution. We used the performance evaluation to understand and explain the measurement results in detail.

  16. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm

    Science.gov (United States)

    Liu, Yang; Ye, Nan; Zhou, Dai-Bing; Wang, Bao-Jun; Pan, Jiao-Qing; Zhao, Ling-Juan; Wang, Wei

    2011-02-01

    A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43 nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths, is successfully demonstrated.

  17. Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

    Science.gov (United States)

    Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

    2017-07-01

    Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

  18. Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-08-01

    We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3° × 10.6°, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  19. Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

    Science.gov (United States)

    O'Brien, S.; Shealy, J. R.; Wicks, G. W.

    1991-04-01

    The monolithic integration of an intracavity modulator with a multiple quantum well (Al)GaAs laser has been accomplished with the use of selective partial interdiffusion. Interdiffusion was used to create a blue-shifted and semitransparent modulator section in a ridge laser structure. In measuring the total optical output power from the devices, steady-state extinction ratios of 20 dB were measured at reverse biases of -4.6 and -3.6 V for modulator sections with lengths of 200 and 400 microns, respectively. Shifting of the lasing mode toward longer wavelengths was also observed making the structure useful as a tunable device and for frequency modulation applications.

  20. Integrated monolithic 3D MEMS scanner for switchable real time vertical/horizontal cross-sectional imaging.

    Science.gov (United States)

    Li, Haijun; Duan, Xiyu; Qiu, Zhen; Zhou, Quan; Kurabayashi, Katsuo; Oldham, Kenn R; Wang, Thomas D

    2016-02-08

    We present an integrated monolithic, electrostatic 3D MEMS scanner with a compact chip size of 3.2 × 2.9 mm(2). Use of parametric excitation near resonance frequencies produced large optical deflection angles up to ± 27° and ± 28.5° in the X- and Y-axes and displacements up to 510 μm in the Z-axis with low drive voltages at atmospheric pressure. When packaged in a dual axes confocal endomicroscope, horizontal and vertical cross-sectional images can be collected seamlessly in tissue with a large field-of-view of >1 × 1 mm(2) and 1 × 0.41 mm(2), respectively, at 5 frames/sec.

  1. Microcoil Spring Interconnects for Ceramic Grid Array Integrated Circuits

    Science.gov (United States)

    Strickland, S. M.; Hester, J. D.; Gowan, A. K.; Montgomery, R. K.; Geist, D. L.; Blanche, J. F.; McGuire, G. D.; Nash, T. S.

    2011-01-01

    As integrated circuit miniaturization trends continue, they drive the need for smaller higher input/output (I/O) packages. Hermetically sealed ceramic area array parts are the package of choice by the space community for high reliability space flight electronic hardware. Unfortunately, the coefficient of thermal expansion mismatch between the ceramic area array package and the epoxy glass printed wiring board limits the life of the interconnecting solder joint. This work presents the results of an investigation by Marshall Space Flight Center into a method to increase the life of this second level interconnection by the use of compliant microcoil springs. The design of the spring and its attachment process are presented along with thermal cycling results of microcoil springs (MCS) compared with state-of-the-art ball and column interconnections. Vibration testing has been conducted on MCS and high lead column parts. Radio frequency simulation and measurements have been made and the MCS has been modeled and a stress analysis performed. Thermal cycling and vibration testing have shown MCS interconnects to be significantly more reliable than solder columns. Also, MCS interconnects are less prone to handling damage than solder columns. Future work that includes shock testing, incorporation into a digital signal processor board, and process evaluation of expansion from a 400 I/O device to a device with over 1,100 I/O is identified.

  2. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  3. Mathematical model of an integrated circuit cooling through cylindrical rods

    Directory of Open Access Journals (Sweden)

    Beltrán-Prieto Luis Antonio

    2017-01-01

    Full Text Available One of the main challenges in integrated circuits development is to propose alternatives to handle the extreme heat generated by high frequency of electrons moving in a reduced space that cause overheating and reduce the lifespan of the device. The use of cooling fins offers an alternative to enhance the heat transfer using combined a conduction-convection systems. Mathematical model of such process is important for parametric design and also to gain information about temperature distribution along the surface of the transistor. In this paper, we aim to obtain the equations for heat transfer along the chip and the fin by performing energy balance and heat transfer by conduction from the chip to the rod, followed by dissipation to the surrounding by convection. Newton's law of cooling and Fourier law were used to obtain the equations that describe the profile temperature in the rod and the surface of the chip. Ordinary differential equations were obtained and the respective analytical solutions were derived after consideration of boundary conditions. The temperature along the rod decreased considerably from the initial temperature (in contatct with the chip surface. This indicates the benefit of using a cilindrical rod to distribute the heat generated in the chip.

  4. PETRIC - A positron emission tomography readout integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Pedrali-Noy, Marzio; Gruber, Gregory; Krieger, Bradley; Mandelli, Emmanuele; Meddeler, Gerrit; Moses, William; Rosso, Valeria

    2000-11-05

    We present architecture, critical design issues and performance measurements of PETRIC, a 64-channel mixed signal front-end integrated circuit (IC) for reading out a photodiode (PD) array coupled with LSO scintillator crystals for a medical imaging application (PET). Each channel consists of a low noise charge sensitive pre-amplifier (CSA), an RC-CR pulse shaper and a winner-take-all (WTA) multiplexer that selects the channel with the largest input signal. Triggered by an external timing signal, a switch opens and a capacitor stores the peak voltage of the winner channel. The shaper rise and fall times are adjustable by means of external current inputs over a continuous range of 0.7 (mu)s to 9 (mu)s. Power consumption is 5.4 mW per channel, measured Equivalent Noise Charge (ENC) at 1 (mu)s peaking time. Zero leakage current is 33 rms electrons plus 7.3 rms electrons per pF of input capacitance. Design is fabricated in 0.5 (mu)m 3.3V CMOS technology.

  5. MIRAGE read-in integrated circuit testing results

    Science.gov (United States)

    Hoelter, Theodore R.; Henry, Blake A.; Graff, John H.; Aziz, Naseem Y.

    1999-07-01

    This paper describes the test results for the MIRAGE read- in-integrated-circuit (RIIC) designed by Indigo Systems Corporation. This RIIC, when mated with suspended membrane, micro-machined resistive elements, forms a highly advanced emitter array. This emitter array is used by Indigo and Santa Barbara Infrared Incorporated in a jointly developed product for infrared scene generation, called MIRAGE. The MIRAGE RIIC is a 512 X 512 pixel design which incorporates a number of features that extend the state of the art for emitter array RIIC devices. These innovations include an all-digital interface for scene data, snapshot image updates (all pixels show the new frame simultaneously), frame rates up to 200 Hz, operating modes that control the device output, power consumption, and diagnostic configuration. Tests measuring operating speed, RIIC functionality and D/A converter performance were completed. At 2.1 X 2.3 cm, this die is also the largest nonstitched device ever made by Indigo's foundry, American Microsystems Incorporated. As with any IC design, die yield is a critical factor that typically scales with the size and complexity. Die yield, and a statistical breakdown of the failures observed will be discussed.

  6. Integrated circuits and electrode interfaces for noninvasive physiological monitoring.

    Science.gov (United States)

    Ha, Sohmyung; Kim, Chul; Chi, Yu M; Akinin, Abraham; Maier, Christoph; Ueno, Akinori; Cauwenberghs, Gert

    2014-05-01

    This paper presents an overview of the fundamentals and state of the-art in noninvasive physiological monitoring instrumentation with a focus on electrode and optrode interfaces to the body, and micropower-integrated circuit design for unobtrusive wearable applications. Since the electrode/optrode-body interface is a performance limiting factor in noninvasive monitoring systems, practical interface configurations are offered for biopotential acquisition, electrode-tissue impedance measurement, and optical biosignal sensing. A systematic approach to instrumentation amplifier (IA) design using CMOS transistors operating in weak inversion is shown to offer high energy and noise efficiency. Practical methodologies to obviate 1/f noise, counteract electrode offset drift, improve common-mode rejection ratio, and obtain subhertz high-pass cutoff are illustrated with a survey of the state-of-the-art IAs. Furthermore, fundamental principles and state-of-the-art technologies for electrode-tissue impedance measurement, photoplethysmography, functional near-infrared spectroscopy, and signal coding and quantization are reviewed, with additional guidelines for overall power management including wireless transmission. Examples are presented of practical dry-contact and noncontact cardiac, respiratory, muscle and brain monitoring systems, and their clinical applications.

  7. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  8. Wireless Amperometric Neurochemical Monitoring Using an Integrated Telemetry Circuit

    Science.gov (United States)

    Roham, Masoud; Halpern, Jeffrey M.; Martin, Heidi B.; Chiel, Hillel J.

    2015-01-01

    An integrated circuit for wireless real-time monitoring of neurochemical activity in the nervous system is described. The chip is capable of conducting high-resolution amperometric measurements in four settings of the input current. The chip architecture includes a first-order ΔΣ modulator (ΔΣM) and a frequency-shift-keyed (FSK) voltage-controlled oscillator (VCO) operating near 433 MHz. It is fabricated using the AMI 0.5 μm double-poly triple-metal n-well CMOS process, and requires only one off-chip component for operation. Measured dc current resolutions of ~250 fA, ~1.5 pA, ~4.5 pA, and ~17 pA were achieved for input currents in the range of ±5, ±37, ±150, and ±600 nA, respectively. The chip has been interfaced with a diamond-coated, quartz-insulated, microneedle, tungsten electrode, and successfully recorded dopamine concentration levels as low as 0.5 μM wirelessly over a transmission distance of ~0.5 m in flow injection analysis experiments. PMID:18990633

  9. Tomography of integrated circuit interconnect with an electromigration void

    Energy Technology Data Exchange (ETDEWEB)

    Levine, Zachary H. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States); Kalukin, Andrew R. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Kuhn, Markus [Intel Corporation RA1-329, 5200 Northeast Elam Young Parkway, Hillsboro, Oregon 74124 (United States); Frigo, Sean P. [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); McNulty, Ian [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Retsch, Cornelia C. [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Wang, Yuxin [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Arp, Uwe [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Lucatorto, Thomas B. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Ravel, Bruce D. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States)] (and others)

    2000-05-01

    An integrated circuit interconnect was subject to accelerated-life test conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect test structure encased in silica. We imaged the sample with 1750 eV photons using the 2-ID-B scanning transmission x-ray microscope at the Advanced Photon Source, a third-generation synchrotron facility. Fourteen views through the sample were obtained over a 170 degree sign range of angles (with a 40 degree sign gap) about a single rotation axis. Two sampled regions were selected for three-dimensional reconstruction: one of the ragged end of a wire depleted by the void, the other of the adjacent interlevel connection (or ''via''). We applied two reconstruction techniques: the simultaneous iterative reconstruction technique and a Bayesian reconstruction technique, the generalized Gaussian Markov random field method. The stated uncertainties are total, with one standard deviation, which resolved the sample to 200{+-}70 and 140{+-}30 nm, respectively. The tungsten via is distinguished from the aluminum wire by higher absorption. Within the void, the aluminum is entirely depleted from under the tungsten via. The reconstructed data show the applicability of this technique to three-dimensional imaging of buried defects in submicrometer structures relevant to the microelectronics industry. (c) 2000 American Institute of Physics.

  10. Neural Networks Integrated Circuit for Biomimetics MEMS Microrobot

    Directory of Open Access Journals (Sweden)

    Ken Saito

    2014-06-01

    Full Text Available In this paper, we will propose the neural networks integrated circuit (NNIC which is the driving waveform generator of the 4.0, 2.7, 2.5 mm, width, length, height in size biomimetics microelectromechanical systems (MEMS microrobot. The microrobot was made from silicon wafer fabricated by micro fabrication technology. The mechanical system of the robot was equipped with small size rotary type actuators, link mechanisms and six legs to realize the ant-like switching behavior. The NNIC generates the driving waveform using synchronization phenomena such as biological neural networks. The driving waveform can operate the actuators of the MEMS microrobot directly. Therefore, the NNIC bare chip realizes the robot control without using any software programs or A/D converters. The microrobot performed forward and backward locomotion, and also changes direction by inputting an external single trigger pulse. The locomotion speed of the microrobot was 26.4 mm/min when the step width was 0.88 mm. The power consumption of the system was 250 mWh when the room temperature was 298 K.

  11. Efficient Fingerprint Matching Algorithm for Integrated Circuit Cards

    Institute of Scientific and Technical Information of China (English)

    Jian-Wei Yang; Li-Feng Liu; Tian-Zi Jiang

    2004-01-01

    Fingerprint matching is a crucial step in fingerprint identification.Recently,a variety of algorithms for this issue have been developed.Each of them is application situation specific and has its advantages and disadvantages.It is highly desired to develop an efficient fingerprint verification technology for Integrated Circuit(IC)Cards or chips.IC cards have some special characteristics,such as very small storage space and slow processing speed,which hinder the use of most fingerprint matching algorithms in such situations.In order to solve this problem,the paper presents an improved minutia-pattern(minutiae-based)matching algorithm by employing the orientation field of the fingerprint as a new feature.Our algorithm not only inherits the advantages of the general minutia-pattern matching algorithms,but also overcomes their disadvantages.Experimental results show that the proposed algorithm can greatly improve the performance of fingerprint matching in both accuracy and efficiency,and it is very suitable for applications in IC cards.

  12. An integrated modelling framework for neural circuits with multiple neuromodulators

    Science.gov (United States)

    Vemana, Vinith

    2017-01-01

    Neuromodulators are endogenous neurochemicals that regulate biophysical and biochemical processes, which control brain function and behaviour, and are often the targets of neuropharmacological drugs. Neuromodulator effects are generally complex partly owing to the involvement of broad innervation, co-release of neuromodulators, complex intra- and extrasynaptic mechanism, existence of multiple receptor subtypes and high interconnectivity within the brain. In this work, we propose an efficient yet sufficiently realistic computational neural modelling framework to study some of these complex behaviours. Specifically, we propose a novel dynamical neural circuit model that integrates the effective neuromodulator-induced currents based on various experimental data (e.g. electrophysiology, neuropharmacology and voltammetry). The model can incorporate multiple interacting brain regions, including neuromodulator sources, simulate efficiently and easily extendable to large-scale brain models, e.g. for neuroimaging purposes. As an example, we model a network of mutually interacting neural populations in the lateral hypothalamus, dorsal raphe nucleus and locus coeruleus, which are major sources of neuromodulator orexin/hypocretin, serotonin and norepinephrine/noradrenaline, respectively, and which play significant roles in regulating many physiological functions. We demonstrate that such a model can provide predictions of systemic drug effects of the popular antidepressants (e.g. reuptake inhibitors), neuromodulator antagonists or their combinations. Finally, we developed user-friendly graphical user interface software for model simulation and visualization for both fundamental sciences and pharmacological studies. PMID:28100828

  13. Novel immunoassay formats for integrated microfluidic circuits: diffusion immunoassays (DIA)

    Science.gov (United States)

    Weigl, Bernhard H.; Hatch, Anson; Kamholz, Andrew E.; Yager, Paul

    2000-03-01

    Novel designs of integrated fluidic microchips allow separations, chemical reactions, and calibration-free analytical measurements to be performed directly in very small quantities of complex samples such as whole blood and contaminated environmental samples. This technology lends itself to applications such as clinical diagnostics, including tumor marker screening, and environmental sensing in remote locations. Lab-on-a-Chip based systems offer many *advantages over traditional analytical devices: They consume extremely low volumes of both samples and reagents. Each chip is inexpensive and small. The sampling-to-result time is extremely short. They perform all analytical functions, including sampling, sample pretreatment, separation, dilution, and mixing steps, chemical reactions, and detection in an integrated microfluidic circuit. Lab-on-a-Chip systems enable the design of small, portable, rugged, low-cost, easy to use, yet extremely versatile and capable diagnostic instruments. In addition, fluids flowing in microchannels exhibit unique characteristics ('microfluidics'), which allow the design of analytical devices and assay formats that would not function on a macroscale. Existing Lab-on-a-chip technologies work very well for highly predictable and homogeneous samples common in genetic testing and drug discovery processes. One of the biggest challenges for current Labs-on-a-chip, however, is to perform analysis in the presence of the complexity and heterogeneity of actual samples such as whole blood or contaminated environmental samples. Micronics has developed a variety of Lab-on-a-Chip assays that can overcome those shortcomings. We will now present various types of novel Lab- on-a-Chip-based immunoassays, including the so-called Diffusion Immunoassays (DIA) that are based on the competitive laminar diffusion of analyte molecules and tracer molecules into a region of the chip containing antibodies that target the analyte molecules. Advantages of this

  14. Diagnosis of soft faults in analog integrated circuits based on fractional correlation

    Institute of Scientific and Technical Information of China (English)

    Deng Yong; Shi Yibing; Zhang Wei

    2012-01-01

    Aiming at the problem of diagnosing soft faults in analog integrated circuits,an approach based on fractional correlation is proposed.First,the Volterra series of the circuit under test (CUT) decomposed by the fractional wavelet packet are used to calculate the fractional correlation functions.Then,the calculated fractional correlation functions are used to form the fault signatures of the CUT.By comparing the fault signatures,the different soft faulty conditions of the CUT are identified and the faults are located.Simulations of benchmark circuits illustrate the proposed method and validate its effectiveness in diagnosing soft faults in analog integrated circuits.

  15. Variable Time Base Integrator Circuit for Buffet Signal Measurements

    Science.gov (United States)

    Batts, Colossie N.

    1973-01-01

    A measurement circuit to obtain buffet data from wind tunnel models wherein a signal proportional to the average RMS value of buffet data is produced for subsequent recording. Feedback means are employed to suppress the D.C. portion of signals developed by the strain gages during dynamic testing. Automatic recording of gain settings of amplifiers employed in the circuit is also provided.

  16. Full Wave Simulation of Integrated Circuits Using Hybrid Numerical Methods

    Science.gov (United States)

    Tan, Jilin

    Transmission lines play an important role in digital electronics, and in microwave and millimeter-wave circuits. Analysis, modeling, and design of transmission lines are critical to the development of the circuitry in the chip, subsystem, and system levels. In the past several decays, at the EM modeling level, the quasi-static approximation has been widely used due to its great simplicity. As the clock rates increase, the inter-connect effects such as signal delay, distortion, dispersion, reflection, and crosstalk, limit the performance of microwave systems. Meanwhile, the quasi-static approach loses its validity for some complex system structures. Since the successful system design of the PCB, MCM, and the chip packaging, rely very much on the computer aided EM level modeling and simulation, many new methods have been developed, such as the full wave approach, to guarantee the successful design. Many difficulties exist in the rigorous EM level analysis. Some of these include the difficulties in describing the behavior of the conductors with finite thickness and finite conductivity, the field singularity, and the arbitrary multilayered multi-transmission lines structures. This dissertation concentrates on the full wave study of the multi-conductor transmission lines with finite conductivity and finite thickness buried in an arbitrary lossy multilayered environment. Two general approaches have been developed. The first one is the integral equation method in which the dyadic Green's function for arbitrary layered media has been correctly formulated and has been tested both analytically and numerically. By applying this method, the double layered high dielectric permitivitty problem and the heavy dielectrical lossy problem in multilayered media in the CMOS circuit design have been solved. The second approach is the edge element method. In this study, the correct functional for the two dimensional propagation problem has been successfully constructed in a rigorous way

  17. Development towards cell-to-cell monolithic integration of a thin-film solar cell and lithium-ion accumulator

    Science.gov (United States)

    Agbo, Solomon N.; Merdzhanova, Tsvetelina; Yu, Shicheng; Tempel, Hermann; Kungl, Hans; Eichel, Rüdiger-A.; Rau, Uwe; Astakhov, Oleksandr

    2016-09-01

    This work focuses on the potentials of monolithic integrated thin-film silicon solar cell and lithium ion cell in a simple cell-to-cell integration without any control electronics as a compact power solution for portable electronic devices. To demonstrate this we used triple-junction thin-film silicon solar cell connected directly to a lithium ion battery cell to charge the battery and in turn discharge the battery through the solar cell. Our results show that with appropriate voltage matching the solar cell provides efficient charging for lab-scale lithium ion storage cell. Despite the absence of any control electronics the discharge rate of the Li-ion cell through the non-illuminated solar cell can be much lower than the charging rate when the current voltage (IV) characteristics of the solar cell is matched properly to the charge-discharge characteristics of the battery. This indicates good sustainability of the ultimately simple integrated device. At the maximum power point, solar energy-to-battery charging efficiency of 8.5% which is nearly the conversion efficiency of the solar cell was obtained indicating potential for loss-free operation of the photovoltaic (PV)-battery integration. For the rest of the charging points, an average of 8.0% charging efficiency was obtained.

  18. 单片集成微波/射频功率放大器技术进展%Progress in Monolithic Integrated Microwave/RF Power Amplifier

    Institute of Scientific and Technical Information of China (English)

    李强; 严利人; 周卫; 张伟

    2011-01-01

    As wireless communication market increases, monolithic integrated microwave/RF power amplifier (MMIC PA) plays a more and more important role in 3G and/or 4G systems. Traditional circuits used in mono-stage amplifiers are reviewed, together with their pros and cons. Architectures, such as the Doherty circuitry, EER (Envelope Elimination and Restoration) technology, LINC, etc. , are also discussed. Generally, these technologies may be used to improve linearity and efficiency of microwave power amplifier. Currently, some system-level linearization techniques have also been utilized. The overview may serve as a useful groundwork for those who are designing MMIC Pas.%回顾了一些用于微波单级功率放大器的传统技术方案,讨论了各自的优缺点.从电路模块的角度,总结了若干兼顾功放线性度和效率指标的典型电路拓扑形式,包括Doherty电路、包络消除与恢复(EER)技术、LINC技术等,并总结了当前主要采用的基于电路系统层面的微波射频功放线性化方案.在此基础上,列举评点了文献中一些典型功放的电路特点和性能指标,可为设计和制造人员提供有益参考.

  19. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  20. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger;

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  1. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    Science.gov (United States)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  2. Hybrid integration of synthesized dielectric image waveguides in substrate integrated circuit technology and its millimeter wave applications

    Science.gov (United States)

    Patrovsky, Andreas

    -band (75 GHz to 110 GHz), a transition from rectangular waveguide to SIIG was developed. Another transition to either microstrip or CPW is essential to enable coplanar probe measurements and to achieve compatibility with monolithic millimeter wave integrated circuits (MMICs). Microstrip and image guide have very different requirements for the substrate thickness, for which reason efforts were concentrated on a wideband transition between the SIIG and CPW. The designed transition shows good broadband performance and minimal radiation loss. Other transitions from the SIIG to the Substrate Integrated Waveguide (SIW) are also presented in the context of substrate integrated circuits (SICs). The latter technology combines planar transmission lines and originally non-planar waveguide structures that are synthesized in planar form on a common substrate. High alignment precision is a direct consequence, which eliminates the necessity for additional tuning. As an open dielectric waveguide technology with very small transmission loss, the SIIG is particularly suitable for antennas and corresponding feed lines. The similarity of the SIIG with other dielectric waveguides and especially with the image guide suggests a knowledge transfer from known dielectric antennas. A planar SIIG rod antenna was designed and fabricated, as a derivative of the established polyrod antenna. The structural shape is simple and compact, and it provides a medium gain in the range of 10 dBi to 15 dBi. A second developed type, an SIIG traveling-wave linear array antenna, is frequency-steerable through broadside due to special radiation elements. The novel design of a slab-mode antenna forms an endfire beam by a planar lens configuration. In addition, all of those dielectric-based antennas are highly efficient. Being synthesized on a planar substrate, the SIIG can be combined in a hybrid way with other waveguide structures on the same substrate in so-called substrate integrated circuits (SICs). It joins the

  3. Electrothermal Analysis of Three-Dimensional Integrated Circuits

    Science.gov (United States)

    Harris, Theodore Robert

    2011-12-01

    Transient electro-thermal simulation of a three dimensional integrated circuit (3DIC) is reported that uses a cell-based simulation to provide a selected transistor thermal profile while providing advantages of hierarchical simulation. Due to CPU and memory limitations, full transistor electro-thermal simulations on a useful scale are not possible. Standard cells are considered on a per-instance basis and modeled with electro-thermal macro-models developed in a multi-physics simulator. Simulations are compared favorably to measurements for a token-generating 3DIC clocking at a maximum of 1 GHz. The 3DIC, which is composed of 9 by 3 layers of repetitive frequency multipliers and dividers, was fabricated with the Massachusetts Institute of Technology Lincoln Laboratory (MITLL) 3DIC process. Measurements indicated a linear rise in temperature of the active areas over a range of applied background ambient temperatures. An average of 7.5 K change in temperature was measured across dense areas of circuitry. For thermal simulation, the physical characteristics of the 3DIC were extracted from flattened OpenAccess layout files. Material parameters, connections, and geometries were considered in order to create a more physically accurate resistive thermal mesh. Physical thermal networks extracted with resolutions of 10 mum and 5 mum connect thermal terminals of the electrothermal macromodel cell elements to active layers yielding temporal and spatial simulated dynamic thermal results in three dimensions. Coupled with model-order reduction techniques, hierarchical dynamic electrothermal simulation of large 3DICs is shown to be tractable, yielding spatial and temporal selected transistor-level thermal profiles.

  4. Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering

    Directory of Open Access Journals (Sweden)

    Heck Martijn J.R.

    2017-01-01

    Full Text Available Technologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D imaging and mapping, like Lidar for remote sensing and navigation, and secure free-space optical communications. The ultimate goal for such a system is to reduce its size, weight, and power consumption, so that it can be mounted on, e.g. drones and autonomous cars. Moreover, beam scanning should ideally be done at video frame rates, something that is beyond the capabilities of current opto-mechanical systems. Photonic integrated circuit (PIC technology holds the promise of achieving low-cost, compact, robust and energy-efficient complex optical systems. PICs integrate, for example, lasers, modulators, detectors, and filters on a single piece of semiconductor, typically silicon or indium phosphide, much like electronic integrated circuits. This technology is maturing fast, driven by high-bandwidth communications applications, and mature fabrication facilities. State-of-the-art commercial PICs integrate hundreds of elements, and the integration of thousands of elements has been shown in the laboratory. Over the last few years, there has been a considerable research effort to integrate beam steering systems on a PIC, and various beam steering demonstrators based on optical phased arrays have been realized. Arrays of up to thousands of coherent emitters, including their phase and amplitude control, have been integrated, and various applications have been explored. In this review paper, I will present an overview of the state of the art of this technology and its opportunities, illustrated by recent breakthroughs.

  5. Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering

    Science.gov (United States)

    Heck, Martijn J. R.

    2017-01-01

    Technologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D) imaging and mapping, like Lidar for remote sensing and navigation, and secure free-space optical communications. The ultimate goal for such a system is to reduce its size, weight, and power consumption, so that it can be mounted on, e.g. drones and autonomous cars. Moreover, beam scanning should ideally be done at video frame rates, something that is beyond the capabilities of current opto-mechanical systems. Photonic integrated circuit (PIC) technology holds the promise of achieving low-cost, compact, robust and energy-efficient complex optical systems. PICs integrate, for example, lasers, modulators, detectors, and filters on a single piece of semiconductor, typically silicon or indium phosphide, much like electronic integrated circuits. This technology is maturing fast, driven by high-bandwidth communications applications, and mature fabrication facilities. State-of-the-art commercial PICs integrate hundreds of elements, and the integration of thousands of elements has been shown in the laboratory. Over the last few years, there has been a considerable research effort to integrate beam steering systems on a PIC, and various beam steering demonstrators based on optical phased arrays have been realized. Arrays of up to thousands of coherent emitters, including their phase and amplitude control, have been integrated, and various applications have been explored. In this review paper, I will present an overview of the state of the art of this technology and its opportunities, illustrated by recent breakthroughs.

  6. Integrated optics approach for advanced semiconductor lasers

    Science.gov (United States)

    Suematsu, Yasuharu; Arai, Shigehisa

    1987-11-01

    Recent advances in the field of semiconductor integrated optics are reviewed from the point of view of monolithic integration of semiconductor lasers and other optical components and/or devices. Emphasis is placed on dynamic-single-mode (DSM) lasers, such as DFB and DBR lasers, intended for highly stable single-wavelength light sources for such monolithic integration. The realization of high-performance DSM lasers and the fabrication techniques of monolithically integrated optical devices and circuits are briefly reviewed. A variety of potential applications is discussed.

  7. Monolithic spectrometer

    Science.gov (United States)

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  8. Method for producing a hybridization of detector array and integrated circuit for readout

    Science.gov (United States)

    Fossum, Eric R.; Grunthaner, Frank J.

    1993-08-01

    A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

  9. Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of-art and perspectives

    Science.gov (United States)

    Sarafis, Panagiotis; Nassiopoulou, Androula G.

    2017-09-01

    The increasing need for miniaturization, reliability, and cost efficiency in modern telecommunications has boosted the idea of system-on-chip integration, incorporating the RF front-end circuitry and the passive elements such as RF transmission lines, inductors, antennas, and filters. However, the performance of the passive elements of these circuits is highly degraded when integrated on standard CMOS Si, due to its low resistivity. Porous silicon (PSi) has emerged as a promising local substrate material for the on-chip monolithic integration of high performance passive RF and mm-wave devices, because it combines high resistivity and low permittivity along with CMOS compatibility. This review paper aims at summarizing the obtained results so far in the above area, including transmission lines, inductors, filters, and miniaturized antennas, monolithically integrated on porous Si in a CMOS-compatible environment. In this respect, we first present the requirements for a low-loss, CMOS-compatible RF substrates and we then argue on how PSi fulfills the set requirements. Then, we present the methods used so far to extract the dielectric properties of PSi, which are necessary inputs for designing RF devices. The performance of different passive RF devices such as coplanar waveguides, inductors, filters, and antennas on the local porous Si substrate is then reviewed and compared with the performance of other state-of-the-art RF passive devices based on different technologies. Finally, we discuss the progress made so far towards the industrialization of PSi local RF substrate technology and the challenges that are currently faced towards this objective.

  10. Flip-chip integration of tilted VCSELs onto a silicon photonic integrated circuit.

    Science.gov (United States)

    Lu, Huihui; Lee, Jun Su; Zhao, Yan; Scarcella, Carmelo; Cardile, Paolo; Daly, Aidan; Ortsiefer, Markus; Carroll, Lee; O'Brien, Peter

    2016-07-25

    In this article we describe a cost-effective approach for hybrid laser integration, in which vertical cavity surface emitting lasers (VCSELs) are passively-aligned and flip-chip bonded to a Si photonic integrated circuit (PIC), with a tilt-angle optimized for optical-insertion into standard grating-couplers. A tilt-angle of 10° is achieved by controlling the reflow of the solder ball deposition used for the electrical-contacting and mechanical-bonding of the VCSEL to the PIC. After flip-chip integration, the VCSEL-to-PIC insertion loss is -11.8 dB, indicating an excess coupling penalty of -5.9 dB, compared to Fibre-to-PIC coupling. Finite difference time domain simulations indicate that the penalty arises from the relatively poor match between the VCSEL mode and the grating-coupler.

  11. A Novel Analog Integrated Circuit Design Course Covering Design, Layout, and Resulting Chip Measurement

    Science.gov (United States)

    Lin, Wei-Liang; Cheng, Wang-Chuan; Wu, Chen-Hao; Wu, Hai-Ming; Wu, Chang-Yu; Ho, Kuan-Hsuan; Chan, Chueh-An

    2010-01-01

    This work describes a novel, first-year graduate-level analog integrated circuit (IC) design course. The course teaches students analog circuit design; an external manufacturer then produces their designs in three different silicon chips. The students, working in pairs, then test these chips to verify their success. All work is completed within…

  12. Low-power integrated-circuit driver for ferrite-memory word lines

    Science.gov (United States)

    Katz, S.

    1970-01-01

    Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

  13. A Novel Analog Integrated Circuit Design Course Covering Design, Layout, and Resulting Chip Measurement

    Science.gov (United States)

    Lin, Wei-Liang; Cheng, Wang-Chuan; Wu, Chen-Hao; Wu, Hai-Ming; Wu, Chang-Yu; Ho, Kuan-Hsuan; Chan, Chueh-An

    2010-01-01

    This work describes a novel, first-year graduate-level analog integrated circuit (IC) design course. The course teaches students analog circuit design; an external manufacturer then produces their designs in three different silicon chips. The students, working in pairs, then test these chips to verify their success. All work is completed within…

  14. Aluminum heat sink enables power transistors to be mounted integrally with printed circuit board

    Science.gov (United States)

    Seaward, R. C.

    1967-01-01

    Power transistor is provided with an integral flat plate aluminum heat sink which mounts directly on a printed circuit board containing associated circuitry. Standoff spacers are used to attach the heat sink to the printed circuit board containing the remainder of the circuitry.

  15. CdSe colloidal nanocrystals monolithically integrated in a pseudomorphic semiconductor epilayer

    Energy Technology Data Exchange (ETDEWEB)

    Larramendi, Erick M. [Physics Faculty-ICTM, University of Havana, Colina Universitaria, C.P. 10400 Havana (Cuba); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universitaet Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany); Schoeps, Oliver; Woggon, Ulrike [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Artemyev, Mikhail V. [Institute for Physico-Chemical Problems, Belarussian State University, Minsk 220080 (Belarus); Schikora, Detlef; Lischka, Klaus [Department Physik, Center for Optoelectronics and Photonics Paderborn (CeOPP), Universitaet Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany)

    2013-01-14

    As optically active emitters in a semiconductor matrix, core/shell and bare CdSe colloidal nanocrystals (CNCs) were monolithically incorporated in ZnSe pseudomorphic epilayers by molecular beam epitaxy (MBE). A suspension of wet chemically synthesized CNCs was sprayed ex-situ over a pseudomorphic ZnSe/GaAs(001) heterostructure using a nebulizer. Subsequently, the matrix material growth was resumed to form a capping layer by a slow MBE growth mode. Structural investigations show high crystalline quality and pseudomorphic epitaxial character of the whole hybrid CNC-matrix structure. The core/shell CNCs remain optically active following the embedding process. Their emission is blue shifted without a significant change on the spectral shape, and shows the same temperature dependence as that of the free exciton peak energy in zinc-blende CdSe at temperatures above 80 K. Our optical characterization of the samples showed that the embedded CNCs were stable and that the structure of the host was preserved. These results are encouraging for the fabrication of more complex optoelectronic devices based on CNCs.

  16. SEMICONDUCTOR INTEGRATED CIRCUITS: A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth

    Science.gov (United States)

    Tao, Tong; Baoyong, Chi; Ziqiang, Wang; Ying, Zhang; Hanjun, Jiang; Zhihua, Wang

    2010-05-01

    A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth in 0.35 μm CMOS is presented. The circuit consists of two variable gain amplifiers (VGA) in cascade and a Gm-C elliptic low-pass filter (LPF). The filter-order and the cut-off frequency of the LPF can be reconfigured to satisfy the requirements of various applications. In order to achieve the optimum power consumption, the bandwidth of the VGAs can also be dynamically reconfigured and some Gm cells can be cut off in the given application. Simulation results show that the analog baseband circuit consumes 16.8 mW for WLAN, 8.9 mW for WCDMA and only 6.5 mW for Bluetooth, all with a 3 V power supply. The analog baseband circuit could provide -10 to +40 dB variable gain, third-order low pass filtering with 1 MHz cut-off frequency for Bluetooth, fourth-order low pass filtering with 2.2 MHz cut-off frequency for WCDMA, and fifth-order low pass filtering with 11 MHz cut-off frequency for WLAN, respectively.

  17. A new pixel level digital read out integrated circuits for ultraviolet imaging sensors

    Science.gov (United States)

    Xu, Bin; Lan, Tian-yi; Yuan, Yong-gang; Li, Xiang-yang

    2014-11-01

    The ultraviolet imaging sensors consist of two important parts: the array of detectors and the read out integrated circuits. Along with the demand for the fine resolution, large input dynamic range and high integration degree of the imaging sensors, the functions of read out integrated circuits are becoming more and more important. The on chip analog to digital conversion is the main directions of research on this area. In this paper, we presented a new digital read out integrated circuits for ultraviolet imaging sensors. The proposed circuits have an analog to digital converter in each pixel, which enable the parallel analog to digital conversion of the whole pixel array. The developed circuits have a 50um×50um pixel area with a 128×128 size, and are designed in a 0.35um four metal double poly mixed signal CMOS process. The simulation results show that the designed analog to digital converter has an accuracy of 0.2mV and can achieve the dynamic range of 88dB. The proposed circuits realize the low noise and high speed digital output of read out integrated circuits for ultraviolet imaging sensors.

  18. Immobilized rolling circle amplification on extended-gate field-effect transistors with integrated readout circuits for early detection of platelet-derived growth factor.

    Science.gov (United States)

    Lin, Ming-Yu; Hsu, Wen-Yang; Yang, Yuh-Shyong; Huang, Jo-Wen; Chung, Yueh-Lin; Chen, Hsin

    2016-07-01

    Detection of tumor-related proteins with high specificity and sensitivity is important for early diagnosis and prognosis of cancers. While protein sensors based on antibodies are not easy to keep for a long time, aptamers (single-stranded DNA) are found to be a good alternative for recognizing tumor-related protein specifically. This study investigates the feasibility of employing aptamers to recognize the platelet-derived growth factor (PDGF) specifically and subsequently triggering rolling circle amplification (RCA) of DNAs on extended-gate field-effect transistors (EGFETs) to enhance the sensitivity. The EGFETs are fabricated by the standard CMOS technology and integrated with readout circuits monolithically. The monolithic integration not only avoids the wiring complexity for a large sensor array but also enhances the sensor reliability and facilitates massive production for commercialization. With the RCA primers immobilized on the sensory surface, the protein signal is amplified as the elongation of DNA, allowing the EGFET to achieve a sensitivity of 8.8 pM, more than three orders better than that achieved by conventional EGFETs. Moreover, the responses of EGFETs are able to indicate quantitatively the reaction rates of RCA, facilitating the estimation on the protein concentration. Our experimental results demonstrate that immobilized RCA on EGFETs is a useful, label-free method for early diagnosis of diseases related to low-concentrated tumor makers (e.g., PDGF) for serum sample, as well as for monitoring the synthesis of various DNA nanostructures in real time. Graphical Abstract The tumor-related protein, PDGF, is detected by immobilizing rolling circle amplification on an EGFET with integrated readout circuit.

  19. 77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

    Science.gov (United States)

    2012-10-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of... importation, and the sale within the United States after importation of certain semiconductor...

  20. Development of pixel readout integrated circuits for extreme rate and radiation

    CERN Document Server

    Garcia-Sciveres, M; CERN. Geneva. The LHC experiments Committee; LHCC

    2013-01-01

    Letter of Intent for RD Collaboration Proposal focused on development of a next generation pixel readout integrated circuits needed for high luminosity LHC detector upgrades. Brings together ATLAS and CMS pixel chip design communities.

  1. Light collection from scattering media in a silicon photonics integrated circuit

    OpenAIRE

    2011-01-01

    We present a silicon photonics integrated circuit to efficiently couple scattered light into a single mode waveguide. By modulating the phase of N light-capturing elements, the collection efficiency can be increased by a factor N.

  2. Waveguide Phase Modulator for Integrated Planar Lightwave Circuits in KTP Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase II effort proposes the development and integration of a Planar Lightwave Circuit (PLC) into an all fiber-based seed laser system used in high...

  3. 77 FR 40381 - Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof, Notice...

    Science.gov (United States)

    2012-07-09

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof, Notice of Commission Determination Not To Review an Initial Determination Terminating the Investigation as...

  4. An Integrated-Circuit Temperature Sensor for Calorimetry and Differential Temperature Measurement.

    Science.gov (United States)

    Muyskens, Mark A.

    1997-01-01

    Describes the application of an integrated-circuit (IC) chip which provides an easy-to-use, inexpensive, rugged, computer-interfaceable temperature sensor for calorimetry and differential temperature measurement. Discusses its design and advantages. (JRH)

  5. High-speed Integrated Circuits for electrical/Optical Interfaces

    DEFF Research Database (Denmark)

    Jespersen, Christoffer Felix

    2008-01-01

    This thesis is a continuation of the effort to increase the bandwidth of communicationnetworks. The thesis presents the results of the design of several high-speed electrical ircuits for an electrical/optical interface. These circuits have been a contribution to the ESTA project in collaboration ...... as examples. Finally, it is concluded that the VIP-2 process is suitable technology for creating circuits for 100 Gb/s communication networks. Keywords: Indium Phosphide (InP), DHBT, VCO, Colpitt, Static Divider, CDR, PLL, Transceiver...... represents the avant-garde of InP technology, with ft and fmax well above 300 GHz. Principles of high speed design are presented and described as a useful background before proceeding to circuits. A static divider is used as an example to illustrate many of the design principles. Theory and fundamentals...

  6. RNA signal amplifier circuit with integrated fluorescence output.

    Science.gov (United States)

    Akter, Farhima; Yokobayashi, Yohei

    2015-05-15

    We designed an in vitro signal amplification circuit that takes a short RNA input that catalytically activates the Spinach RNA aptamer to produce a fluorescent output. The circuit consists of three RNA strands: an internally blocked Spinach aptamer, a fuel strand, and an input strand (catalyst), as well as the Spinach aptamer ligand 3,5-difluoro-4-hydroxylbenzylidene imidazolinone (DFHBI). The input strand initially displaces the internal inhibitory strand to activate the fluorescent aptamer while exposing a toehold to which the fuel strand can bind to further displace and recycle the input strand. Under a favorable condition, one input strand was able to activate up to five molecules of the internally blocked Spinach aptamer in 185 min at 30 °C. The simple RNA circuit reported here serves as a model for catalytic activation of arbitrary RNA effectors by chemical triggers.

  7. A Powerful Optimization Tool for Analog Integrated Circuits Design

    Directory of Open Access Journals (Sweden)

    M. Kubar

    2013-09-01

    Full Text Available This paper presents a new optimization tool for analog circuit design. Proposed tool is based on the robust version of the differential evolution optimization method. Corners of technology, temperature, voltage and current supplies are taken into account during the optimization. That ensures robust resulting circuits. Those circuits usually do not need any schematic change and are ready for the layout.. The newly developed tool is implemented directly to the Cadence design environment to achieve very short setup time of the optimization task. The design automation procedure was enhanced by optimization watchdog feature. It was created to control optimization progress and moreover to reduce the search space to produce better design in shorter time. The optimization algorithm presented in this paper was successfully tested on several design examples.

  8. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  9. Simply and reliably integrating micro heaters/sensors in a monolithic PCR-CE microfluidic genetic analysis system.

    Science.gov (United States)

    Zhong, Runtao; Pan, Xiaoyan; Jiang, Lei; Dai, Zhongpeng; Qin, Jianhua; Lin, Bingcheng

    2009-04-01

    A novel fabrication process was presented to construct a monolithic integrated PCR-CE microfluidic DNA analysis system as a step toward building a total genetic analysis microsystem. Microfabricated Titanium/Platinum (Ti/Pt) heaters and resistance temperature detectors (RTDs) were integrated on the backside of a bonded glass chip to provide good thermal transfer and precise temperature detection for the drilled PCR-wells. This heater/RTD integration procedure was simple and reliable, and the resulting metal layer can be easily renewed when the Ti/Pt layer was damaged in later use or novel heater/RTD design was desired. A straightforward "RTD-calibration" method was employed to optimize the chip-based thermal cycling conditions. This method was convenient and rapid, comparing with a conventional RTD-calibration/temperature adjustment method. The highest ramping rates of 14 degrees C/s for heating and 5 degrees C/s for cooling in a 3-microL reaction volume allow 30 complete PCR cycles in about 33 min. After effectively passivating the PCR-well surface, successful lambda-phage DNA amplifications were achieved using a two- or three-temperature cycling protocol. The functionality and performance of the integrated microsystem were demonstrated by successful amplification and subsequent on-line separation/sizing of lambda-phage DNA. A rapid assay for Hepatitis B virus, one of the major human pathogens, was performed in less than 45 min, demonstrating that the developed PCR-CE microsystem was capable of performing automatic and high-speed genetic analysis.

  10. Monolithic integration of optical mode-size converter and high-speed electroabsorption modulators using laterally undercut waveguide

    Science.gov (United States)

    Wu, Tsu-Hsiu; Lin, Fang-Zheng; Yan, Hung-Jung; Wu, Jui-Pin; Chiu, Yi-Jen

    2010-02-01

    A new monolithic integration scheme of fabricating optical spot-size converter (SSC) is realized in this work. High-speed electroabsorption modulator (EAM) is used to integrate such SSC. By laterally tapering the active region of an optical waveguide through undercut active region, a vertically asymmetric waveguide coupler can be defined to form an SSC, where the top is a tapered active waveguide, and the bottom is a large core of passive waveguide mode-matched to single-mode fiber (SMF). Through the top tapered active waveguide, the effective index can be gradually varied in the propagation direction, momentarily matching the bottom low-index passive waveguide. It not only performs the resonant coupling in such asymmetric waveguide coupler, but also locks the transferred power by the tapered structure. InGaAsP/InP multiple quantum wells are used as active region of active waveguide. Based on the highly selective etching properties between InGaAsP and InP, the tapered active waveguide can be fabricated by a method, called selectively undercut-etching-active-region (UEAR), enabling the processing a narrow waveguide structure (up to submicron) by general wet etching from a large waveguide ridge. It also leads to good microwave performance of waveguide. By taking this advantage, a SSC-integrated EAM can perform high-speed electrical-to-optical (EO) response as well as low-insertion loss properties. A mode transfer efficiency of 70% is obtained in such SSC. By narrowing waveguide by UEAR, over 40 GHz of -3dB electrical-to-optical (EO) response is obtained from this device. The high efficient SSC integrated with high-speed EAM suggests that the UEAR technique can have potential for applications in high-speed optoelectronic fields.

  11. Radiation hardening of low-noise readout integrated circuit for infrared focal plane arrays

    Science.gov (United States)

    Lee, Min Su; Lee, Yong Soo; Lee, Hee Chul

    2010-04-01

    A radiation-resistant readout integrated circuit for focal plane arrays was studied to improve the reliability of infrared image systems operating in a radioactive environment, such as in space or in the surroundings of a nuclear reactor. First, as radiation-hardened NMOSFET structure, which includes a layout modification technique, was proposed. The readout integrated circuit for infrared focal plane arrays was then designed on basis of the proposed NMOSFET layout. Commercial 0.35 um process technology was used to fabricate the proposed unit NMOSFET and the designed readout integrated circuit which is based on the proposed NMOSFET. The measured electrical characteristics of the fabricated unit NMOSFET and readout integrated circuit are in good agreement with the simulated results. For verification of the radiation tolerance, the fabricated chip was exposed to 1 Mrad (Si) of gamma radiation, which is high enough to guarantee reliable usage in space or in a very harsh radiation environment. While exposed to gamma radiation, the fabricated chip was connected to a power supply (3.3 V) for testing under the worst conditions. After being exposed to 1 Mrad of gamma radiation, the unit NMOSFET showed only a slight increment of a few picoamperes in the leakage current, and the designed readout integrated circuit showed little change at an output voltage of less than 10% of a proper output voltage. The changes in the characteristics of the unit NMOSFET and the designed readout infrared integrated circuit are at an allowable level in relation to process variation.

  12. CMOS analog integrated circuits high-speed and power-efficient design

    CERN Document Server

    Ndjountche, Tertulien

    2011-01-01

    High-speed, power-efficient analog integrated circuits can be used as standalone devices or to interface modern digital signal processors and micro-controllers in various applications, including multimedia, communication, instrumentation, and control systems. New architectures and low device geometry of complementary metaloxidesemiconductor (CMOS) technologies have accelerated the movement toward system on a chip design, which merges analog circuits with digital, and radio-frequency components. CMOS: Analog Integrated Circuits: High-Speed and Power-Efficient Design describes the important tren

  13. V-band low-noise integrated circuit receiver. [for space communication systems

    Science.gov (United States)

    Chang, K.; Louie, K.; Grote, A. J.; Tahim, R. S.; Mlinar, M. J.; Hayashibara, G. M.; Sun, C.

    1983-01-01

    A compact low-noise V-band integrated circuit receiver has been developed for space communication systems. The receiver accepts an RF input of 60-63 GHz and generates an IF output of 3-6 GHz. A Gunn oscillator at 57 GHz is phaselocked to a low-frequency reference source to achieve high stability and low FM noise. The receiver has an overall single sideband noise figure of less than 10.5 dB and an RF to IF gain of 40 dB over a 3-GHz RF bandwidth. All RF circuits are fabricated in integrated circuits on a Duroid substrate.

  14. Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit.

    Science.gov (United States)

    Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed; Kanaya, Haruichi

    2017-08-01

    This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for -4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

  15. Integrated Design Validation: Combining Simulation and Formal Verification for Digital Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Lun Li

    2006-04-01

    Full Text Available The correct design of complex hardware continues to challenge engineers. Bugs in a design that are not uncovered in early design stages can be extremely expensive. Simulation is a predominantly used tool to validate a design in industry. Formal verification overcomes the weakness of exhaustive simulation by applying mathematical methodologies to validate a design. The work described here focuses upon a technique that integrates the best characteristics of both simulation and formal verification methods to provide an effective design validation tool, referred as Integrated Design Validation (IDV. The novelty in this approach consists of three components, circuit complexity analysis, partitioning based on design hierarchy, and coverage analysis. The circuit complexity analyzer and partitioning decompose a large design into sub-components and feed sub-components to different verification and/or simulation tools based upon known existing strengths of modern verification and simulation tools. The coverage analysis unit computes the coverage of design validation and improves the coverage by further partitioning. Various simulation and verification tools comprising IDV are evaluated and an example is used to illustrate the overall validation process. The overall process successfully validates the example to a high coverage rate within a short time. The experimental result shows that our approach is a very promising design validation method.

  16. A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22mW Output Power and 51 ITU 100 GHz Channels over 43 nm

    Institute of Scientific and Technical Information of China (English)

    LIU Yang; YE Nan; ZHOU Dai-Bing; WANG Bao-Jun; PAN Jiao-Qing; ZHAO Ling-Juan; WANG Wei

    2011-01-01

    @@ A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths, is successfully demonstrated.%A sampled grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with semiconductor optical amplifiers (SOAs), which has a tuning range over 43nm from 1514.05nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 m W for all output wavelengths,is successfully demonstrated.

  17. Integrated-Circuit Controller For Brushless dc Motor

    Science.gov (United States)

    Le, Dong Tuan

    1994-01-01

    Generic circuit performs commutation-logic and power-switching functions for control of brushless dc motor. Controller includes commutation-logic and associated control circuitry, power supply, and inverters containing power transistors. Major advantages of controller are size, weight, and power consumption can be made less than other brushless-dc-motor controllers.

  18. Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

    Science.gov (United States)

    Sato, Kenji; Kotaka, Isamu; Kondo, Yasuhiro; Yamamoto, Mitsuo

    1996-10-01

    Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode-locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained.

  19. An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector

    DEFF Research Database (Denmark)

    Saini, Vikram; Yvind, Kresten; Larsson, David

    2006-01-01

    A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integr...

  20. Development of a GaAs-Based Monolithic Surface Acoustic Wave Integrated Chemical Microsensor

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1998-10-28

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other rf applications.