WorldWideScience

Sample records for mono c-si years

  1. What's Mono?

    Science.gov (United States)

    ... mono? Have you ever heard of the "kissing disease"? If you said that it's mono, you're absolutely correct. But you don't get mono only from kissing. Infectious mononucleosis, called mono for short, is caused by the Epstein-Barr virus (EBV), which is a type of herpes ...

  2. Transport properties at 3C-SiC interfaces

    OpenAIRE

    Eriksson, Gustav Jens Peter

    2011-01-01

    For years cubic (3C) silicon carbide (SiC) has been believed to be a very promising wide bandgap semiconductor for high frequency and high power electronics. However, 3C-SiC is fraught with large concentrations of various defects, which have so far hindered the achievement of the predicted properties at a macroscopic level. These defects have properties that are inherently nanoscale and that will have a strong influence on the electrical behavior of the material, particularly at interfaces c...

  3. Reconfigurable c-Si/Au hybrid nanoantenna

    Science.gov (United States)

    Chebykin, A. V.; Zalogina, A. S.; Zuev, D. A.; Makarov, S. V.

    2017-09-01

    We have performed numerical optimization of hybrid c-Si/Au nanoantenna's geometry to improve efficiency of NV-centers radiation. We have shown that Purcell factor at the wavelength 635 nm can be as much as 4550 for point light emitter placed in the gap between gold spherical nanoparticle and truncated silicon nanocone. We have demonstrated that electric field enhancement can reach a value of 12.9 at the wavelength of NV-center pumping, 532 nm. Our results can be useful for the development of more efficient sources of single photons based on NV-centers in nanodiamonds.

  4. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  5. Permeating the Social Justice Ideals of Equality and Equity within the Context of Early Years: Challenges for Leadership in Multi-Cultural and Mono-Cultural Primary Schools

    Science.gov (United States)

    Mistry, Malini; Sood, Krishan

    2015-01-01

    This paper explores the ideology of social justice through links between equality and equity within Early Years and what remain the challenges for leadership. Questionnaires and interviews in English multi-cultural and mono-cultural schools with Early Years age phases were conducted. The findings showed that the ideology of social justice,…

  6. SiC/SiC fuel cladding R and D Project 'SCARLET': Status and future plan

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira

    2015-01-01

    This paper provides the recent progress in SiC/SiC development towards early utilisation for LWRs based on NITE method. After the March 11 Disaster in East-Japan, ensuring safe technology for LWR became a top priority R and D in nuclear energy policy of Japan. Along this line, replacement of Zircaloy claddings with SiC/SiC based fuel cladding is becoming one of the most attractive options and a MEXT fund based project, SCARLET, and a METI fund based project have been launched as 5-year termed projects at Muroran Institute of Technology. These projects care for NITE process for making long SiC/SiC fuel pins and connecting technology integration. The SCARLET project also includes coolant compatibility and irradiation effect evaluations as LWR and LMFBR materials. The outline and the present status of the SCARLET project will be briefly introduced in the present paper. (authors)

  7. BURNER RIG TESTING OF A500 C/SiC

    Science.gov (United States)

    2018-03-17

    AFRL-RX-WP-TR-2018-0071 BURNER RIG TESTING OF A500® C /SiC Larry P. Zawada Universal Technology Corporation Jennifer Pierce UDRI...TITLE AND SUBTITLE BURNER RIG TESTING OF A500® C /SiC 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F 6...test program characterized the durability behavior of A500® C /SiC ceramic matrix composite material at room and elevated temperature. Specimens were

  8. How Is Mono Spread?

    Science.gov (United States)

    ... How Is Mono Spread? Print My sister has mononucleosis. I drank out of her drink before we ... that I have mono now? – Kyle* Mono, or mononucleosis, is spread through direct contact with saliva. This ...

  9. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  10. The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

    International Nuclear Information System (INIS)

    Hayun, S.; Frage, N.; Dariel, M.P.

    2006-01-01

    The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

  11. Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter

    Directory of Open Access Journals (Sweden)

    Akimchenko Alina

    2017-01-01

    Full Text Available The miniature and low-power devices with long service life in hard operating conditions like the Carbon-14 beta-decay energy converters indeed as eternal resource for integrated MEMS and NEMS are considered. Authors discuss how to create the power supply for MEMS/NEMS devices, based on porous SiC/Si structure, which are tested to be used as the beta-decay energy converters of radioactive C-14 into electrical energy. This is based on the silicon carbide obtaining by self-organizing mono 3C-SiC endotaxy on the Si substrate. The new idea is the C-14 atoms including in molecules in the silicon carbide porous structure by this technology, which will increase the efficiency of the converter due to the greater intensity of electron-hole pairs generation rate in the space charge region. The synthesis of C-14 can be also performed by using the electronically controlled magneto-optic chamber.

  12. C-Si solar cell modules

    International Nuclear Information System (INIS)

    Tomita, Takashi

    2005-01-01

    In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10-fold in the last 5 years. Silicon-based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. (Author)

  13. Grinding, Machining Morphological Studies on C/SiC Composites

    Science.gov (United States)

    Xiao, Chun-fang; Han, Bing

    2018-05-01

    C/SiC composite is a typical material difficult to machine. It is hard and brittle. In machining, the cutting force is large, the material removal rate is low, the edge is prone to collapse, and the tool wear is serious. In this paper, the grinding of C/Si composites material along the direction of fiber distribution is studied respectively. The surface microstructure and mechanical properties of C/SiC composites processed by ultrasonic machining were evaluated. The change of surface quality with the change of processing parameters has also been studied. By comparing the performances of conventional grinding and ultrasonic grinding, the surface roughness and functional characteristics of the material can be improved by optimizing the processing parameters.

  14. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  15. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    International Nuclear Information System (INIS)

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  16. Design of a creep experiment for SiC/SiC composites in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, S.L.; Hamilton, M.L.; Jones, R.H. [and others

    1997-08-01

    A new specimen was designed for performing in-reactor creep tests on composite materials, specifically on SiC/SiC composites. The design was tailored for irradiation at 800{degrees}C in a HFIR RB position. The specimen comprises a composite cylinder loaded by a pressurized internal bladder that is made of Nb1Zr. The experiment was designed for approximately a one year irradiation.

  17. Design of a creep experiment for SiC/SiC composites in HFIR

    International Nuclear Information System (INIS)

    Hecht, S.L.; Hamilton, M.L.; Jones, R.H.

    1997-01-01

    A new specimen was designed for performing in-reactor creep tests on composite materials, specifically on SiC/SiC composites. The design was tailored for irradiation at 800 degrees C in a HFIR RB position. The specimen comprises a composite cylinder loaded by a pressurized internal bladder that is made of Nb1Zr. The experiment was designed for approximately a one year irradiation

  18. Hot pressing of B4C/SiC composites

    International Nuclear Information System (INIS)

    Sahin, F.C.; Turhan, E.; Yesilcubuk, S.A.; Addemir, O.

    2005-01-01

    B 4 C/SiC ceramic composites containing 10-20-30 vol % SiC were prepared by hot pressing method. The effect of SiC addition and hot pressing temperature on sintering behaviour and mechanical properties of hot pressed composites were investigated. Microstructures of hot pressed samples were examined by SEM technique. Three different temperatures (2100 deg. C, 2200 deg. C and 2250 deg. C) were used to optimize hot pressing temperature applying 100 MPa pressure under argon atmosphere during the sintering procedure. The highest relative density of 98.44 % was obtained by hot pressing at 2250 deg. C. However, bending strengths of B 4 C/SiC composite samples were lower than monolithic B 4 C in all experimental conditions. (authors)

  19. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  20. Improved C/SiC Ceramic Composites Made Using PIP

    Science.gov (United States)

    Easler, Timothy

    2007-01-01

    Improved carbon-fiber-reinforced SiC ceramic-matrix composite (C/SiC CMC) materials, suitable for fabrication of thick-section structural components, are producible by use of a combination of raw materials and processing conditions different from such combinations used in the prior art. In comparison with prior C/SiC CMC materials, these materials have more nearly uniform density, less porosity, and greater strength. The majority of raw-material/processing-condition combinations used in the prior art involve the use of chemical vapor infiltration (CVI) for densifying the matrix. In contrast, in synthesizing a material of the present type, one uses a combination of infiltration with, and pyrolysis of, a preceramic polymer [polymer infiltration followed by pyrolysis (PIP)]. PIP processing is performed in repeated, tailored cycles of infiltration followed by pyrolysis. Densification by PIP processing takes less time and costs less than does densification by CVI. When one of these improved materials was tested by exposure to a high-temperature, inert-gas environment that caused prior C/SiC CMCs to lose strength, this material did not lose strength. (Information on the temperature and exposure time was not available at the time of writing this article.) A material of the present improved type consists, more specifically, of (1) carbon fibers coated with an engineered fiber/matrix interface material and (2) a ceramic matrix, containing SiC, derived from a pre-ceramic polymer with ceramic powder additions. The enhancements of properties of these materials relative to those of prior C/SiC CMC materials are attributable largely to engineering of the fiber/ matrix interfacial material and the densification process. The synthesis of a material of this type includes processing at an elevated temperature to a low level of open porosity. The approach followed in this processing allows one to fabricate not only simple plates but also more complexly shaped parts. The carbon fiber

  1. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  2. Study of the interface in n{sup +}{mu}c-Si/p-type c-Si heterojunctions: role of the fluorine chemistry in the interface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Grimaldi, A.; Sacchetti, A.; Capezzuto, P.; Ambrico, M.; Bruno, G.; Roca, Francesco

    2003-03-03

    Investigation of n-p heterojunction solar cells obtained by depositing a n-type thin silicon films either amorphous or microcrystalline on p-type c-Si is carried out. The study is focused on the improvement of the c-Si surface and emitter layer/c-Si substrate interface. The peculiarity is the use of SiF{sub 4}-based plasmas for the in situ dry cleaning and passivation of the c-Si surface and for the PECVD deposition of the emitter layer that can be either amorphous (a-Si:H,F) or microcrystalline ({mu}c-Si). The use of SiF{sub 4} instead of the conventional SiH{sub 4} results in a lower hydrogen content in the film and in a reduction of the interaction of the c-Si surface with hydrogen atoms. Furthermore, the dependence of the heterojunction solar cell photovoltaic parameters on the insertion of an intrinsic buffer layer between the n-type thin silicon layer and the p-type c-Si substrate is discussed.

  3. Oxidation of C/SiC Composites at Reduced Oxygen Partial Pressures

    Science.gov (United States)

    Opila, Elizabeth J.; Serra, Jessica

    2009-01-01

    Carbon-fiber reinforced SiC (C/SiC) composites are proposed for leading edge applications of hypersonic vehicles due to the superior strength of carbon fibers at high temperatures (greater than 1500 C). However, the vulnerability of the carbon fibers in C/SiC to oxidation over a wide range of temperatures remains a problem. Previous oxidation studies of C/SiC have mainly been conducted in air or oxygen, so that the oxidation behavior of C/SiC at reduced oxygen partial pressures of the hypersonic flight regime are less well understood. In this study, both carbon fibers and C/SiC composites were oxidized over a wide range of temperatures and oxygen partial pressures to facilitate the understanding and modeling of C/SiC oxidation kinetics for hypersonic flight conditions.

  4. Fracture behavior of C/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Dong Hyun; Lee, Jeong Won; Kim, Jae Hoon; Shin, Ihn Cheol; Lim, Byung Joo [Chungnam National University, Daejeon (Korea, Republic of)

    2017-08-15

    The fracture behavior of carbon fiber-reinforced silicon carbide (C/SiC) composites used in rocket nozzles has been investigated under tension, compression, and fracture conditions at room temperature, 773 K and 1173 K. The C/SiC composites used in this study were manufactured by liquid silicon infiltration process at ~1723 K. All experiments were conducted using two types of specimens, considering fiber direction and oxidation condition. Experimental results show that temperature, fiber direction, and oxidation condition affect the behavior of C/SiC composites. Oxidation was found to be the main factor that changes the strength of C/SiC composites. By applying an anti-oxidation coating, the tensile and compressive strengths of the C/SiC composites increased with temperature. The fracture toughness of the C/SiC composites also increased with increase temperature. A fractography analysis of the fractured specimens was conducted using a scanning electron microscope.

  5. Doping and stability of 3C-SiC: from thinfilm to bulk growth

    DEFF Research Database (Denmark)

    Jokubavicius, V.; Sun, J.; Linnarsson, M. K.

    cell technology. Nitrogen and boron doped 3C-SiC layers can depict a new infrared LED. Hexagonal SiC is an excellent substrate for heteropeitaxial growth of 3C-SiC due to excellent compatibility in lattice constant and thermal expansion coefficient. However, the growth of 3C-SiC on such substrates......-SiC for optoelectronic applications are discussed....

  6. Impact resistance of uncoated SiC/SiC composites

    International Nuclear Information System (INIS)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  7. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  8. Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

    Science.gov (United States)

    Albani, Marco; Marzegalli, Anna; Bergamaschini, Roberto; Mauceri, Marco; Crippa, Danilo; La Via, Francesco; von Känel, Hans; Miglio, Leo

    2018-05-01

    The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500-1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system.

  9. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  10. Progress in the medicinal chemistry of silicon: C/Si exchange and beyond.

    Science.gov (United States)

    Fujii, Shinya; Hashimoto, Yuichi

    2017-04-01

    Application of silyl functionalities is one of the most promising strategies among various 'elements chemistry' approaches for the development of novel and distinctive drug candidates. Replacement of one or more carbon atoms of various biologically active compounds with silicon (so-called sila-substitution) has been intensively studied for decades, and is often effective for alteration of activity profile and improvement of metabolic profile. In addition to simple C/Si exchange, several novel approaches for utilizing silicon in medicinal chemistry have been suggested in recent years, focusing on the intrinsic differences between silicon and carbon. Sila-substitution offers great potential for enlarging the chemical space of medicinal chemistry, and provides many options for structural development of drug candidates.

  11. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  12. How Long Is Mono Contagious?

    Science.gov (United States)

    ... Here's how it works: Mono is short for mononucleosis . It's usually caused by an infection with the ... May 2018 More on this topic for: Teens Mononucleosis How Do Doctors Test for Mono? Can a ...

  13. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  14. Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

    International Nuclear Information System (INIS)

    Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V; Lai, Z; Henry, A; Janzen, E; Pippel, E; Woltersdorf, J

    2011-01-01

    We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T C ) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T C = 11.3 K and critical current density of about 2.5 MA cm -2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

  15. Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

    Energy Technology Data Exchange (ETDEWEB)

    Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V [Group for Advanced Receiver Development, Department of Earth and Space Sciences, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Lai, Z [Nanofabrication Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Henry, A; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Pippel, E; Woltersdorf, J, E-mail: dimitar.dochev@chalmers.se [Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Germany)

    2011-03-15

    We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T{sub C}) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T{sub C} = 11.3 K and critical current density of about 2.5 MA cm{sup -2} at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

  16. Effect of sintering temperature on structure of C-B4C-SiC composites with silicon additive

    International Nuclear Information System (INIS)

    Wu Lijun; Academia Sinica, Shenyang; Huang Qizhong; Yang Qiaoqin; Zhao Lihu; Xu Zhongyu

    1996-01-01

    Carbon materials possess good electric conductivity, heat conductivity, corrosion-resistance, self-lubrication and hot-shocking resistance, and are easily machined. However, they have low mechanical strength, and are easily oxidized in air at high temperature. On the contrary, ceramic materials have high mechanical strength and hardness, and have good wear-resistance and oxidation-resistance. However, they have the shortages of poor thermal-shock resistance lubrication, and are difficult to machine. Therefore, carbon/ceramic composites with the advantages of both carbon and ceramic materials have been widely studied in the recent years. Huang prepared C-B 4 C-SiC composites with the free sintering method and the hot pressing method, and studied the effects of Si, Al, Al 2 O 3 , Ni and Ti additives on the properties of the composites. The results showed that these additives could improve the properties of the composites. Zhao et al. studies the structure of C-B 4 C-SiC composites with Si additive sintered at 2,000 C and found two c-center monoclinic phases. In this paper, the authors discussed the effect of the sintering temperature on the structure of C-B 4 C-SiC composites with Si additive by means of transmission electron microscope (TEM) and x-ray diffractometer (XRD)

  17. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  18. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  19. Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

    International Nuclear Information System (INIS)

    Romero, R.; Lopez, M.C.; Leinen, D.; Martin, F.; Ramos-Barrado, J.R.

    2004-01-01

    Electrical, structural and compositional properties of n-ZnO/c-Si heterojunctions prepared by chemical spray pyrolysis on single-crystal n-type and p-type monocrystalline silicon(1 0 0) substrates are examined with the C-V method and admittance spectroscopy at temperature ranges between 223 and 373 K. The n-ZnO/c-Si heterojunctions show a height barrier consistent with the difference in energy of the work functions of Si and ZnO; however, the n-ZnO:Al/c-Si heterojunctions present a more complex behavior due to the defects at or near the n-ZnO:Al/c-Si interface, causing a Fermi energy pinning

  20. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  1. Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature

    Czech Academy of Sciences Publication Activity Database

    Švrček, Vladimír; Fejfar, Antonín; Fojtík, Petr; Mates, Tomáš; Poruba, Aleš; Stuchlíková, Hana; Pelant, Ivan; Kočka, Jan; Nasuno, Y.; Kondo, M.; Matsuda, A.

    299-302, - (2002), s. 395-399 ISSN 0022-3093 Institutional research plan: CEZ:AV0Z1010914 Keywords : ćcSi:H thin films * optoelectronic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2002

  2. Inversor elevador mono - etapa

    OpenAIRE

    Herber Ramírez, Juan José De Jesús

    2006-01-01

    En este trabajo de tesis se estudia una topología Mono - Etapa de un Inversor Elevador. Esta estructura está formada por dos convertidores CD - CD Elevadores bidireccionales en corriente, los cuales son controlados por dos señales senoidales, con cierto nivel de CD, desfasadas 180º. Las principales ventajas que esta topología presenta son: 1) Este Inversor genera de manera natural, mediante el control adecuado, un voltaje CA de salida mayor que el voltaje de CD de entrada ...

  3. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  4. Progress on Fabrication of Planar Diffusion Couples with Representative TRISO PyC/SiC Microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Hunn, John D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jolly, Brian C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Gerczak, Tyler J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Campbell, Anne A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Schumacher, Austin T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-10-01

    Release of fission products from tristructural-isotropic (TRISO) coated particle fuel limits the fuel’s operational lifetime and creates potential safety and maintenance concerns. A need for diffusion analysis in representative TRISO layers exists to provide fuel performance models with high fidelity data to improve fuel performance and efficiency. An effort has been initiated to better understand fission product transport in, and release from, quality TRISO fuel by investigating diffusion couples with representative pyrocarbon (PyC) and silicon carbide (SiC). Here planar PyC/SiC diffusion couples are being developed with representative PyC/SiC layers using a fluidized bed chemical vapor deposition (FBCVD) system identical to those used to produce laboratory-scale TRISO fuel for the Advanced Gas Reactor Fuel Qualification and Development Program’s (AGR) first fuel irradiation. The diffusivity of silver, the silver and palladium system, europium, and strontium in the PyC/SiC will be studied at elevated temperatures and under high temperature neutron irradiation. The study also includes a comparative study of PyC/SiC diffusion couples with varying TRISO layer properties to understand the influence of SiC microstructure (grain size) and the PyC/SiC interface on fission product transport. The first step in accomplishing these goals is the development of the planar diffusion couples. The diffusion couple construction consists of multiple steps which includes fabrication of the primary PyC/SiC structures with targeted layer properties, introduction of fission product species and seal coating to create an isolated system. Coating development has shown planar PyC/SiC diffusion couples with similar properties to AGR TRISO fuel can be produced. A summary of the coating development process, characterization methods, and status are presented.

  5. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  6. Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing.

    Science.gov (United States)

    Wen, C; Wan, W; Li, F H; Tang, D

    2015-04-01

    The [110] cross-sectional samples of 3C-SiC/Si (001) were observed with a spherical aberration-corrected 300 kV high-resolution transmission electron microscope. Two images taken not close to the Scherzer focus condition and not representing the projected structures intuitively were utilized for performing the deconvolution. The principle and procedure of image deconvolution and atomic sort recognition are summarized. The defect structure restoration together with the recognition of Si and C atoms from the experimental images has been illustrated. The structure maps of an intrinsic stacking fault in the area of SiC, and of Lomer and 60° shuffle dislocations at the interface have been obtained at atomic level. Copyright © 2015 Elsevier Ltd. All rights reserved.

  7. Tuning the colors of c-Si solar cells by exploiting plasmonic effects

    Science.gov (United States)

    Peharz, G.; Grosschädl, B.; Prietl, C.; Waldhauser, W.; Wenzl, F. P.

    2016-09-01

    The color of a crystalline silicon (c-Si) solar cell is mainly determined by its anti-reflective coating. This is a lambda/4 coating made from a transparent dielectric material. The thickness of the anti-reflective coating is optimized for maximal photocurrent generation, resulting in the typical blue or black colors of c-Si solar cells. However, for building-integrated photovoltaic (BiPV) applications the color of the solar cells is demanded to be tunable - ideally by a cheap and flexible coating process on standard (low cost) c-Si solar cells. Such a coating can be realized by applying plasmonic coloring which is a rapidly growing technology for high-quality color filtering and rendering for different fields of application (displays, imaging,…). In this contribution, we present results of an approach for tuning the color of standard industrial c-Si solar cells that is based on coating them with metallic nano-particles. In particular, thin films (green and brownish/red. The position of the resonance peak in the reflection spectrum was found to be almost independent from the angle of incidence. This low angular sensitivity is a clear advantage compared to alternative color tuning methods, for which additional dielectric thin films are deposited on c-Si solar cells.

  8. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  9. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  10. High-temperature protective coatings for C/SiC composites

    Directory of Open Access Journals (Sweden)

    Xiang Yang

    2014-12-01

    Full Text Available Carbon fiber-reinforced silicon carbide (C/SiC composites were well-established light weight materials combining high specific strength and damage tolerance. For high-temperature applications, protective coatings had to provide oxidation and corrosion resistance. The literature data introduced various technologies and materials, which were suitable for the application of coatings. Coating procedures and conditions, materials design limitations related to the reactivity of the components of C/SiC composites, new approaches and coating systems to the selection of protective coatings materials were examined. The focus of future work was on optimization by further multilayer coating systems and the anti-oxidation ability of C/SiC composites at temperatures up to 2073 K or higher in water vapor.

  11. Impact of organic overlayers on a-Si:H/c-Si surface potential

    KAUST Repository

    Seif, Johannes P.

    2017-04-11

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  12. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  13. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  14. Impact of organic overlayers on a-Si:H/c-Si surface potential

    KAUST Repository

    Seif, Johannes P.; Niesen, Bjoern; Tomasi, Andrea; Ballif, Christophe; De Wolf, Stefaan

    2017-01-01

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  15. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  16. Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Crovetto, Andrea; Hansen, Ole

    We present an expanded study of the passivation properties of titanium dioxide (TiO2) on p-type crystalline silicon (c-Si). We report a low surface recombination velocity (16 cm/s) for TiO2 passivation layers with a thin tunnelling oxide interlayer (SiO2 or Al2O3) on p-type crystalline silicon (c-Si......), and post-deposition annealing temperature were investigated. We have observed that that SiO2 and Al2O3 interlayers enhance the TiO2 passivation of c-Si. TiO2 thin film passivation layers alone result in lower effective carrier lifetime. Further annealing at 200  ̊C in N2 gas enhances the surface...

  17. Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

    2017-04-15

    Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

  18. Effect of Environment on the Stress- Rupture Behavior of a C/SiC Composite Studied

    Science.gov (United States)

    Verrilli, Michael J.; Kiser, J. Douglas; Opila, Elizabeth J.; Calomino, Anthony M.

    2002-01-01

    Advanced reusable launch vehicles will likely incorporate fiber-reinforced ceramic matrix composites (CMC's) in critical propulsion and airframe components. The use of CMC's is highly desirable to save weight, improve reuse capability, and increase performance. One of the candidate CMC materials is carbon-fiber-reinforced silicon carbide (C/SiC). In potential propulsion applications, such as turbopump rotors and nozzle exit ramps, C/SiC components will be subjected to a service cycle that includes mechanical loading under complex, high-pressure environments containing hydrogen, oxygen, and steam. Degradation of both the C fibers and the SiC matrix are possible in these environments. The objective of this effort was to evaluate the mechanical behavior of C/SiC in various environments relevant to reusable launch vehicle applications. Stress-rupture testing was conducted at the NASA Glenn Research Center on C/SiC specimens in air and steam-containing environments. Also, the oxidation kinetics of the carbon fibers that reinforce the composite were monitored by thermogravimetric analysis in the same environments and temperatures used for the stress-rupture tests of the C/SiC composite specimens. The stress-rupture lives obtained for C/SiC tested in air and in steam/argon mixtures are shown in the following bar chart. As is typical for most materials, lives obtained at the lower temperature (600 C) are longer than for the higher temperature (1200 C). The effect of environment was most pronounced at the lower temperature, where the average test duration in steam at 600 C was at least 30 times longer than the lives obtained in air. The 1200 C data revealed little difference between the lives of specimens tested in air and steam at atmospheric pressure.

  19. Identification of nasopharyngeal carcinoma from photoluminescence spectra of 3C-SiC nanocrystals

    Science.gov (United States)

    Wang, Li-Fen; Guo, Jun-Hong; Huang, Zhi-Chun; Gu, Jian-Sen; Feng, Li-Ren; Liu, Li-Zhe

    2017-09-01

    The identification of intracellular pH (pHi) during carcinogenesis progression plays a crucial role in the studies of biochemistry, cytology, and clinical medicine. In this work, 3C-SiC nanocrystals (NCs), which can effectively monitor the pH environment by using the linear relation between photoluminescence intensity and surface OH- and H+ concentration, are adapted as fluorescent probes for monitoring carcinogenesis progression of nasopharyngeal carcinoma. Our results demonstrated that 3C-SiC NCs are compatible with living cells and have low cytotoxicity. The pHi measurements in different carcinogenesis environments indicate the validity and sensitivity of this technology in identifying nasopharyngeal carcinoma in application.

  20. Highly efficient holograms based on c-Si metasurfaces in the visible range.

    Science.gov (United States)

    Martins, Augusto; Li, Juntao; da Mota, Achiles F; Wang, Yin; Neto, Luiz G; do Carmo, João P; Teixeira, Fernando L; Martins, Emiliano R; Borges, Ben-Hur V

    2018-04-16

    This paper reports on the first hologram in transmission mode based on a c-Si metasurface in the visible range. The hologram shows high fidelity and high efficiency, with measured transmission and diffraction efficiencies of ~65% and ~40%, respectively. Although originally designed to achieve full phase control in the range [0-2π] at 532 nm, these holograms have also performed well at 444.9 nm and 635 nm. The high tolerance to both fabrication and wavelength variations demonstrate that holograms based on c-Si metasurfaces are quite attractive for diffractive optics applications, and particularly for full-color holograms.

  1. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  2. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  3. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  4. Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

    Science.gov (United States)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2016-02-01

    Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

  5. SiC-Si as a support material for oxygen evolution electrode in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Tomás García, Antonio Luis; Petrushina, Irina

    2011-01-01

    The need of higher energy efficiency in hydrogen production has promoted the research on improved catalysts for water electrolysis. In this work, a novel supported catalyst for oxygen evolution electrodes was prepared and characterized with different techniques. IrO2 supported on a SiC/Si composite...

  6. Detection of Potential Induced Degradation in c-Si PV Panels Using Electrical Impedance Spectroscopy

    DEFF Research Database (Denmark)

    Oprea, Matei-lon; Spataru, Sergiu; Sera, Dezso

    2016-01-01

    This work, for the first time, investigates an Impedance Spectroscopy (IS) based method for detecting potential-induced degradation (PID) in crystalline silicon photovoltaic (c-Si PV) panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID...

  7. CVD growth and characterization of 3C-SiC thin films

    Indian Academy of Sciences (India)

    Unknown

    Cubic silicon carbide (3C-SiC) thin films were grown on (100) and (111) Si substrates by CVD technique using ... of grown films were studied using optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and X-ray ... the oxide mask gets damaged (Edgar et al 1998). There- fore, lower ...

  8. IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

    NARCIS (Netherlands)

    Yang, G.; Ingenito, A.; Isabella, O.; Zeman, M.

    2016-01-01

    Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface

  9. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  10. New evaluation method of crack growth in SiC/SiC composites using interface elements

    International Nuclear Information System (INIS)

    Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

    2000-01-01

    Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

  11. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  12. Atomic-layer deposited passivation schemes for c-Si solar cells

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Macco, B.; Melskens, J.; Verheijen, M.A.; Kessels, W.M.M.E.

    2016-01-01

    A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5,

  13. Sequential C-Si Bond Formations from Diphenylsilane: Application to Silanediol Peptide Isostere Precursors

    DEFF Research Database (Denmark)

    Nielsen, Lone; Skrydstrup, Troels

    2008-01-01

    and the first new carbon-silicon bond. The next step is the reduction of this hydridosilane with lithium metal providing a silyl lithium reagent, which undergoes a highly diastereoselective addition to an optically active tert-butanesulfinimine, thus generating the second C-Si bond. This method allows...

  14. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  15. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  16. Investigation of 3C-SiC/SiO2 interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements

    Science.gov (United States)

    Nugraha, T. A.; Rohrmueller, M.; Gerstmann, U.; Greulich-Weber, S.; Stellhorn, A.; Cantin, J. L.; von Bardeleben, J.; Schmidt, W. G.; Wippermann, S.

    SiC is widely used in high-power, high-frequency electronic devices. Recently, it has also been employed as a building block in nanocomposites used as light absorbers in solar energy conversion devices. Analogous to Si, SiC features SiO2 as native oxide that can be used for passivation and insulating layers. However, a significant number of defect states are reported to form at SiC/SiO2 interfaces, limiting mobility and increasing recombination of free charge carriers. We investigated the growth of oxide on different 3C-SiC surfaces from first principles. Carbon antisite Csi defects are found to be strongly stabilized in particular at the interface, because carbon changes its hybridization from sp3 in the SiC-bulk to sp2 at the interface, creating a dangling bond inside a porous region of the SiO2 passivating layer. Combining ab initio g-tensor calculations and electron paramagnetic resonance (EPR) measurements, we show that Csi defects explain the measured EPR signatures, while the hyperfine structure allows to obtain local structural information of the oxide layer. Financial support from BMBF NanoMatFutur Grant 13N12972 and DFG priority program SPP-1601 is gratefully acknowledged.

  17. Mono pile foundation. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Lyngesen, S.; Brendstrup, C.

    1997-02-01

    The use of mono piles as foundations for maritime structures has been developed during the last decades. The installation requirements within the offshore sector have resulted in equipment enabling driving of piles up to 3-4 m to large penetration depths. The availability of this equipment has made the use of large mono piles feasible as foundations for structures like wind turbines. The mono pile foundations consists of three parts; the bare pile, a conical transition and a boat landing. All parts are prefitted at the yard in order to minimise the installation work that has to be carried out offshore. The study of a mono pile foundations for a 1.5 MW wind turbine has been conducted for two locations, Horns Rev and Roedsand. Three different water depths: 5, 8 and 11 m have been investigated in the study. The on-site welding between pile and conical transition is performed by an automatic welding machine. Final testing and eventually repair of the weld are conducted at least 16 hours after welding. This is followed by final installation of J-tube, tie-in to subsea cables and installation of the impressed current system for corrosive protection of the mono pile. The total cost for procurement and installation of the mono pile using the welded connection is estimated. The price does not include procurement and installation of access platform and boat landing. These costs are estimated to 250.000 DKK. Depending on water depth the cost of the pile ranges from 2,2 to 2,7 million DKK. Procurement and fabrication of the pile are approx. 75% of the total costs. The remaining 25% are due to installation. The total costs are very sensitive to the unit price of pile steel. During the project it became obvious that ice load has a very large influence on the dimensions of the mono pile. (EG)

  18. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-10-30

    Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

  19. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  20. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

    2005-01-01

    We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Hot pressing of B{sub 4}C/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Sahin, F.C.; Turhan, E.; Yesilcubuk, S.A.; Addemir, O. [Ystanbul Technical University, Faculty of Chemistry and Metallurgy, Materials and Metallurgical Engineering Dept., Maslak-Ystanbul (Turkey)

    2005-07-01

    B{sub 4}C/SiC ceramic composites containing 10-20-30 vol % SiC were prepared by hot pressing method. The effect of SiC addition and hot pressing temperature on sintering behaviour and mechanical properties of hot pressed composites were investigated. Microstructures of hot pressed samples were examined by SEM technique. Three different temperatures (2100 deg. C, 2200 deg. C and 2250 deg. C) were used to optimize hot pressing temperature applying 100 MPa pressure under argon atmosphere during the sintering procedure. The highest relative density of 98.44 % was obtained by hot pressing at 2250 deg. C. However, bending strengths of B{sub 4}C/SiC composite samples were lower than monolithic B{sub 4}C in all experimental conditions. (authors)

  2. A microstructure study of C + SiC coating materials for first wall of fusion reactor

    International Nuclear Information System (INIS)

    Pan Ying; Gao Dihua; Lu Huaichang; Yao Yiming

    1995-03-01

    By means of OM, SEM, XRD, WDS and EDAX, a microstructure study has been made of: (1) the dependence of microstructure and crystal structure of C + SiC coating and content and distribution of SiC in it on technological process, the coating was deposited on graphite substrate by chemical vapour deposition (CVD) with C 3 H 6 , CH 3 SiCl 3 and Ar mixture gases; (2) the influence of chemical sputtering by hydrogen ions and thermal shock by electron beams with high energy on microstructure and performance of the coating. The results show that the C + SiC coating deposited at 1600 degree C has good adherence and is resistant to damage from chemical sputtering by hydrogen ions and resistant to thermal shock by electron beams. (9 refs., 16 figs., 1 tab.)

  3. Current status and recent research achievements in SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Y., E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Snead, L.L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Henager, C.H. [Pacific Northwest National Laboratory, Richland, WA (United States); Nozawa, T. [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan); Hinoki, T. [Institute of Advanced Energy, Kyoto University, Kyoto (Japan); Iveković, A.; Novak, S. [Jožef Stefan Institute, Ljubljana (Slovenia); Gonzalez de Vicente, S.M. [EFDA Close Support Unit, Garching (Germany)

    2014-12-15

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  4. Current status and recent research achievements in SiC/SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Snead, L.L.; Henager, C.H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S.M.

    2014-01-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications

  5. SiC/SiC composites through transient eutectic-phase route for fusion applications

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Nozawa, T.; Sato, M.

    2004-01-01

    Factors that may limit attractiveness of silicon-carbide-based ceramic composites to fusion applications include thermal conductivity, applicable design stress, chemical compatibility, hermeticity, radiation stability and fabrication cost. A novel SiC/SiC composite, which has recently been developed through nano-infiltration and transient eutectic-phase (NITE) processing route, surpasses conventional materials in many of these properties. In this paper, the latest development, property evaluation and prospect of the NITE SiC/SiC composites are briefly reviewed. The topics range from fundamental aspects of process development to industrial process development. Elevated temperature strength, fracture behavior, and thermo-physical properties in various environments are summarized. Future directions of materials and application technology development are also discussed

  6. Current status and recent research achievements in SiC/SiC composites

    Science.gov (United States)

    Katoh, Y.; Snead, L. L.; Henager, C. H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S. M.

    2014-12-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  7. Limiting efficiency of generalized realistic c-Si solar cells coupled to ideal up-converters

    Science.gov (United States)

    Johnson, Craig M.; Conibeer, Gavin J.

    2012-11-01

    The detailed balance model of photovoltaic up-conversion is revised for the specific case of a c-Si solar cell under the AM1.5G solar spectrum. The limiting efficiency of an ideal solar cell with a band gap of 1.117 eV may be increased from approximately 33% to 40% with ideal up-conversion. However, real solar cells do not demonstrate the step-function absorption characteristic assumed in the standard detailed balance model. Here, we use tabulated Si refractive index data to develop a generalized model of a realistic conventional c-Si solar cell. The model incorporates optical design and material parameters such as free carrier absorption that have a non-trivial impact on the operation of the up-conversion layer. While these modifications are shown to decrease the absolute limiting efficiency, the benefit of up-conversion is shown to be relatively greater.

  8. Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guijun, E-mail: gliad@connect.ust.hk; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing [State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-06-09

    Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400–800 nm) and bottom (800–1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

  9. Electroluminescence of erbium in Al/α-Si:H(Er)/p-c-Si/Al structure

    International Nuclear Information System (INIS)

    Kon'kov, I.O.; Kuznetsov, A.N.; Pak, P.E.; Terukov, E.I.; Granitsyna, L.S.

    2001-01-01

    It is informed for the first time on the observation of the erbium intensive electroluminescence from the amorphous hydrated silicon layer by application of the Al/α-Si:H(Er)/p-c-Si/Al structure in the direct shift mode. The above structure is the n-p-heterostructure with the barrier values of 0.3-0.4 eV for the electrons and 0.9-1.1 eV for the holes. The electroluminescence efficiency is evaluated at the level ∼ 2 x 10 -5 . The electroluminescence effect in the Al/α-Si:H(Er)/p-c-Si/Al structure is connected with the hole tunneling from the crystal silicon by the amorphous silicon localized states with the subsequent release into the valent zone [ru

  10. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  11. Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

    International Nuclear Information System (INIS)

    Li, Guijun; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing

    2014-01-01

    Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400–800 nm) and bottom (800–1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

  12. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    International Nuclear Information System (INIS)

    Scholz, R.; Greeff, J. de; Vinche, C.

    1998-01-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 (Ω m) -1 at 20 deg. C to 550 (Ω m) -1 at 1000 deg.C. The irradiation reduced only slightly the magnitude of σ indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  13. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, R.; Greeff, J. de; Vinche, C. [Commission Europeenne Community, JRC, Vatican City State, Holy See (Italy)

    1998-07-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 ({omega} m){sup -1} at 20 deg. C to 550 ({omega} m){sup -1} at 1000 deg.C. The irradiation reduced only slightly the magnitude of {sigma} indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  14. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  15. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  16. High-temperature protective coatings for C/SiC composites

    OpenAIRE

    Xiang Yang; Chen Zhao-hui; Cao Feng

    2014-01-01

    Carbon fiber-reinforced silicon carbide (C/SiC) composites were well-established light weight materials combining high specific strength and damage tolerance. For high-temperature applications, protective coatings had to provide oxidation and corrosion resistance. The literature data introduced various technologies and materials, which were suitable for the application of coatings. Coating procedures and conditions, materials design limitations related to the reactivity of the components of C...

  17. Evaluation of a Melt Infiltrated SiC/SiC Ceramic Matrix Composite

    Science.gov (United States)

    2017-12-20

    temperature performance of a state- of-the-art CMC provides evidence that this new class of materials can, or perhaps cannot, meet the harsh...and elevated temperature . This report describes tensile, creep, and fatigue testing procedures and presents the results. 15. SUBJECT TERMS ceramic...matrix composites, creep, dwell fatigue, fatigue, high temperature , melt infiltrated, SiC/SiC 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  18. Investigation into solubility and diffusion in SiC-NbC, SiC-TiC, SiC-ZrC systems

    International Nuclear Information System (INIS)

    Safaraliev, G.K.; Tairov, Yu.M.; Tsvetkov, V.F.; Shabanov, Sh.Sh.

    1991-01-01

    An investigation is carried out which demonstrates solid-phase interaction between SiC and NbC, TiC and ZrC monocrystals. The monocrystals are subjected to hot pressing in SiC powder with dispersity of 5x10 -6 m. The pressing temperature is 2270-2570 K and pressure is varied in the range of 20-40 MPa. Element composition and the distribution profile in a thin layer near the boundary of SiC-NbC, SiC-TiC and SiC-ZrC are investigated by the Anger spectroscopy method. The obtained results permit to make the conclusion in the possibility of solid solution formation in investigated systems

  19. Disorder accumulation and recovery in gold-ion irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Weber, William J.; Lian, Jie; Kalkhoran, N. M.

    2009-01-12

    A single-crystal 3C-SiC film on the Si/SiO2/Si (SIMOX) substrate was irradiated in different areas at 156 K with Au2+ ions to low fluences. The disorder profiles as a function of dose on both the Si and C sublattices have been determined in situ using a combination of 0.94 MeV D+ Rutherford backscattering spectrometry and nuclear reaction analysis in channeling geometry along the <100>, <110> and <111> axes. The results indicate that for the same damage state, the level of disorder on the Si sublattice in 3C-SiC follows a decreasing order along the <111>, <100> and <110> axes, while that on the C sublattice shows comparable values. Similar levels of Si and C disorder are observed along the <111> axis over the applied dose range. However, the level of C disorder is higher than that of Si disorder along either <100> or <110>. The amount of disorder recovery during thermal annealing processes depends on the sublattice (Si or C) and crystallographic orientation. Room-temperature recovery occurs for both sublattices in 3C-SiC irradiated to a dose of 0.047 dpa or lower. Significant recovery is observed along all directions during thermal annealing at 600 K. The results will be discussed and compared to those for 6H- and 4H-SiC under similar irradiation conditions.

  20. Advanced Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: NASA's Perspectives

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation reviews NASA environmental barrier coating (EBC) system development programs and the coating materials evolutions for protecting the SiC/SiC Ceramic Matrix Composites in order to meet the next generation engine performance requirements. The presentation focuses on several generations of NASA EBC systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. The current EBC development emphasis is placed on advanced NASA 2700F candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance are described. The research and development opportunities for advanced turbine airfoil environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling are discussed.

  1. Mechanical, Anisotropic, and Electronic Properties of XN (X = C, Si, Ge): Theoretical Investigations.

    Science.gov (United States)

    Ma, Zhenyang; Liu, Xuhong; Yu, Xinhai; Shi, Chunlei; Wang, Dayun

    2017-08-08

    The structural, mechanical, elastic anisotropic, and electronic properties of Pbca -XN (X = C, Si, Ge) are investigated in this work using the Perdew-Burke-Ernzerhof (PBE) functional, Perdew-Burke-Ernzerhof for solids (PBEsol) functional, and Ceperly and Alder, parameterized by Perdew and Zunger (CA-PZ) functional in the framework of density functional theory. The achieved results for the lattice parameters and band gap of Pbca -CN with the PBE functional in this research are in good accordance with other theoretical results. The band structures of Pbca -XN (X = C, Si, Ge) show that Pbca -SiN and Pbca -GeN are both direct band gap semiconductor materials with a band gap of 3.39 eV and 2.22 eV, respectively. Pbca -XN (X = C, Si, Ge) exhibits varying degrees of mechanical anisotropic properties with respect to the Poisson's ratio, bulk modulus, shear modulus, Young's modulus, and universal anisotropic index. The (001) plane and (010) plane of Pbca -CN/SiN/GeN both exhibit greater elastic anisotropy in the bulk modulus and Young's modulus than the (100) plane.

  2. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    International Nuclear Information System (INIS)

    Saucedo-Mora, L.; Lowe, T.; Zhao, S.; Lee, P.D.; Mummery, P.M.; Marrow, T.J.

    2016-01-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  3. Fracture Characteristics of C/SiC Composites for Rocket Nozzle at Elevated Temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Dong Hyun; Lee, Jeong Won; Kim, Jae Hoon [Chungnam Nat’l Univ., Daejeon (Korea, Republic of); Sihn, Ihn Cheol; Lim, Byung Joo [Dai-Yang Industries Co., Daejeon (Korea, Republic of)

    2016-11-15

    In a solid propulsion system, the rocket nozzle is exposed to high temperature combustion gas. Hence, choosing an appropriate material that could demonstrate adequate performance at high temperature is important. As advanced materials, carbon/silicon carbide composites (C/SiC) have been studied with the aim of using them for the rocket nozzle throat. However, when compared with typical structural materials, C/SiC composites are relatively weak in terms of both strength and toughness, owing to their quasi-brittle behavior and oxidation at high temperatures. Therefore, it is important to evaluate the thermal and mechanical properties of this material before using it in this application. This study presents an experimental method to investigate the fracture behavior of C/SiC composite material manufactured using liquid silicon infiltration (LSI) method at elevated temperatures. In particular, the effects of major parameters, such as temperature, loading, oxidation conditions, and fiber direction on strength and fracture characteristics were investigated. Fractography analysis of the fractured specimens was performed using an SEM.

  4. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Saucedo-Mora, L. [Institute Eduardo Torroja for Construction Sciences-CSIC, Madrid (Spain); Department of Materials, University of Oxford (United Kingdom); Lowe, T. [Manchester X-ray Imaging Facility, The University of Manchester (United Kingdom); Zhao, S. [Department of Materials, University of Oxford (United Kingdom); Lee, P.D. [Research Complex at Harwell, Rutherford Appleton Laboratory (United Kingdom); Mummery, P.M. [School of Mechanical, Aerospace and Civil Engineering, The University of Manchester (United Kingdom); Marrow, T.J., E-mail: james.marrow@materials.ox.ac.uk [Department of Materials, University of Oxford (United Kingdom)

    2016-12-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  5. Mechanical, Anisotropic, and Electronic Properties of XN (X = C, Si, Ge): Theoretical Investigations

    Science.gov (United States)

    Ma, Zhenyang; Liu, Xuhong; Yu, Xinhai; Shi, Chunlei; Wang, Dayun

    2017-01-01

    The structural, mechanical, elastic anisotropic, and electronic properties of Pbca-XN (X = C, Si, Ge) are investigated in this work using the Perdew–Burke–Ernzerhof (PBE) functional, Perdew–Burke–Ernzerhof for solids (PBEsol) functional, and Ceperly and Alder, parameterized by Perdew and Zunger (CA–PZ) functional in the framework of density functional theory. The achieved results for the lattice parameters and band gap of Pbca-CN with the PBE functional in this research are in good accordance with other theoretical results. The band structures of Pbca-XN (X = C, Si, Ge) show that Pbca-SiN and Pbca-GeN are both direct band gap semiconductor materials with a band gap of 3.39 eV and 2.22 eV, respectively. Pbca-XN (X = C, Si, Ge) exhibits varying degrees of mechanical anisotropic properties with respect to the Poisson’s ratio, bulk modulus, shear modulus, Young’s modulus, and universal anisotropic index. The (001) plane and (010) plane of Pbca-CN/SiN/GeN both exhibit greater elastic anisotropy in the bulk modulus and Young’s modulus than the (100) plane. PMID:28786960

  6. Approaching total absorption of graphene strips using a c-Si subwavelength periodic membrane

    Science.gov (United States)

    Sang, Tian; Wang, Rui; Li, Junlang; Zhou, Jianyu; Wang, Yueke

    2018-04-01

    Approaching total absorption of graphene strips at near infrared using a crystalline-silicon (c-Si) subwavelength periodic membrane (SPM) is presented. The absorption in graphene strips in a c-Si SPM is enhanced by a resonant tip, which is resulted from the coupling between the guided mode and the radiation mode through symmetry breaking of the structure at near-normal incidence. The enhancement of the electric field intensity is increased 1939 times and the group velocity of light is decreased to 3.55 ×10-4c at resonance, and 99.3% absorption in graphene strips can be achieved by critical coupling at the incident angle of 2°. High absorption of the graphene strips can be maintained as the etching thickness, the strip width, and the period are altered. When this type of c-Si SPM with graphene strips is used in refractive index sensors, it shows excellent sensing properties due to its stable near-unity absorption.

  7. Determination of material properties for short fibre reinforced C/C-SiC

    Directory of Open Access Journals (Sweden)

    Hausherr J.-M.

    2015-01-01

    Full Text Available Determining the mechanical properties of short fibre reinforced CMC using standard sized coupons has always been a challenge due to a high statistical scattering of the measured values. Although the random orientation of short fibres results in a quasi-isotropic material behavior of 2D-structures with a sufficiently large volume, the small volume typical for test coupons usually results in a non-isotropic fibre orientation in the tested volume. This paper describes a method for manufacturing unidirectional oriented short fibre reinforced CMC materials and presents material properties of UD-C/C-SiC. After verifying the fibre orientation of the CMC using micro-computed tomography, coupons were extracted to determine the orthotropic material properties. These orthotropic material properties were then used to predict the properties of C/C-SiC with randomly distributed short fibres. To validate the method, micro-computed tomography is used to quantitatively determine the fibre orientation within coupons extracted from randomly distributed short fibre C/C-SiC. After mechanical three-point-bending tests, the measured stiffness and bending strength is compared with the predicted properties. Finally, the data are used to devise a method suited for reducing the inherent large spread of material properties associated with the measurement of CMC materials with randomly distributed short fibres.

  8. Effect of surface morphology and densification on the infrared emissivity of C/SiC composites

    International Nuclear Information System (INIS)

    Wang, Fuyuan; Cheng, Laifei; Zhang, Qing; Zhang, Litong

    2014-01-01

    Highlights: • The cauliflower-like microstructure improved the infrared emissivity multiply. • The infrared emissivity decreased continually with the improving surface flatness. • The densification process boosted the infrared emissivity. - Abstract: The effects of surface morphology and densification on the infrared emissivity of 2D C/SiC composites were investigated in 6–16 μm from 1000 °C to 1600 °C. As the sample surface was polished, the reflection and scattering for the electromagnetic waves of thermal radiation were reduced, causing a sustained decrease in the infrared emissivity. The space-variant polarizations caused by the cauliflower-like microstructure were enervated in the smooth surface, which enhanced the reduction trendy in the infrared emissivity. In densification process, the increasing SiC content and the growing amount of the cauliflower-like microstructure on sample surface improved the infrared emissivity of C/SiC composites, while the decreasing porosity decreased it. Due to the greater positive effects on the thermal radiation during the densification process, the infrared emissivity of C/SiC composites increased successively with density

  9. Effect of surface morphology and densification on the infrared emissivity of C/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fuyuan, E-mail: wangfy1986@gmail.com; Cheng, Laifei; Zhang, Qing, E-mail: zhangqing@nwpu.edu.cn; Zhang, Litong

    2014-09-15

    Highlights: • The cauliflower-like microstructure improved the infrared emissivity multiply. • The infrared emissivity decreased continually with the improving surface flatness. • The densification process boosted the infrared emissivity. - Abstract: The effects of surface morphology and densification on the infrared emissivity of 2D C/SiC composites were investigated in 6–16 μm from 1000 °C to 1600 °C. As the sample surface was polished, the reflection and scattering for the electromagnetic waves of thermal radiation were reduced, causing a sustained decrease in the infrared emissivity. The space-variant polarizations caused by the cauliflower-like microstructure were enervated in the smooth surface, which enhanced the reduction trendy in the infrared emissivity. In densification process, the increasing SiC content and the growing amount of the cauliflower-like microstructure on sample surface improved the infrared emissivity of C/SiC composites, while the decreasing porosity decreased it. Due to the greater positive effects on the thermal radiation during the densification process, the infrared emissivity of C/SiC composites increased successively with density.

  10. Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

    Science.gov (United States)

    Colston, Gerard; Myronov, Maksym

    2017-11-01

    Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

  11. Festival nimega Mono / Ivar Sakk

    Index Scriptorium Estoniae

    Sakk, Ivar, 1962-

    2015-01-01

    Haapsalu graafilise disaini festival Haapsalu Linnagaleriis: sisaldab ülevaate- ja teemanäitust ning väikest sümpoosioni. Temaatilise aastanäituse motiiv on "MONO". Plakateid on ka välismaa tegijatelt. Kuraator Marko Kekishev

  12. Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

    International Nuclear Information System (INIS)

    Khazaka, Rami; Portail, Marc; Vennéguès, Philippe; Alquier, Daniel; Michaud, Jean François

    2015-01-01

    Graphical abstract: In this contribution, we demonstrated the influence of the 3C-SiC layer on the subsequent growth of Si epilayers. We were able to give a direct evidence that the rotation in the Si epilayer of 90° around the growth direction occurs exactly on the termination of an antiphase boundary in the 3C-SiC layer as shown in the figure above. Thus, increasing the layer thickness of the 3C-SiC leads to a direct improvement of the crystalline quality of the subsequent Si epilayer. (a) Cross-section bright-field TEM image of the Si/3C-SiC layer stack along two 3C-SiC zone axes [1 −1 0] and [1 1 0] (equivalent to [1 −1 1] and [1 1 2] in Si, respectively), (b) dark field image selecting a (2 0 −2) electron diffraction spot indicated by the black circle in the SAED shown as inset, (c) dark field image selecting a (−1 1 −1) electron diffraction spot indicated by the black circle in the SAED shown as inset. The dotted white line in the images show the position of the defect in the 3C-SiC layer. - Abstract: This work presents a structural study of silicon (Si) thin films grown on cubic silicon carbide (3C-SiC) by chemical vapor deposition. The presence of grains rotated by 90° around the growth direction in the Si layer is directly related to the presence of antiphase domains on the 3C-SiC surface. We were able to provide a direct evidence that the 90° rotation of Si grains around the growth direction occurs exactly on the termination of antiphase boundaries (APBs) in 3C-SiC layer. Increasing the 3C-SiC thickness reduces the APBs density on 3C-SiC surface leading to a clear improvement of the uppermost Si film crystal quality. Furthermore, we observed by high resolution plan-view TEM images the presence of hexagonal Si domains limited to few nm in size. These hexagonal Si domains are inclusions in small Si grains enclosed in larger ones rotated by 90°. Finally, we propose a model of grains formation in the Si layer taking into consideration the effect

  13. Self-sealing multilayer coating for SiC/SiC composites

    International Nuclear Information System (INIS)

    Ferraris, M.; Appendino Montorsi, M.; Salvo, M.; Isola, C.; Kohyama, A.

    1997-01-01

    A double layer coating for SiC/SiC for fusion applications is proposed: the first layer consists in a homogeneous, crack free, glass-ceramic with high characteristic temperatures and thermal expansion coefficient compatible to the composite one; the second layer is amorphous and shows self-sealing properties above 700degC. The glass and the glass-ceramic materials used for this double layer coating do not contain lithium and boron oxide, making them particularly interesting for thermonuclear fusion applications. The self-sealing property of the double layer coating was valued by inducing cracks on the coatings and observing their reparation after heating. (author)

  14. Global Annual Final AC Yield Comparison between HCPV and c-Si PV

    Directory of Open Access Journals (Sweden)

    Juan Pablo Ferrer-Rodríguez

    2015-01-01

    Full Text Available A worldwide comparison of the annual yield between conventional c-Si photovoltaic (PV technology and high concentrated photovoltaic (HCPV technology is presented. The idea of this paper is to find the most appropriate locations for HCPV systems in terms of the annual energy produced when comparing to fixed tilt PV systems and two-axis oriented PY systems. For estimating the annual energy generation, the method of the Performance Ratio is used. For some locations with high annual direct normal irradiation values, which are distributed around the world, HCPV systems are found to be more advantageous than fixed tilt PV systems. World maps showing this comparison are presented.

  15. Performance and Durability of Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna

    2016-01-01

    This presentation highlights advanced environmental barrier coating (EBC) and SiC-SiC Ceramic Matrix Composites (CMC) systems for next generation turbine engines. The emphasis will be placed on fundamental coating and CMC property evaluations; and the integrated system performance and degradation mechanisms in simulated laboratory turbine engine testing environments. Long term durability tests in laser rig simulated high heat flux the rmomechanical creep and fatigue loading conditions will also be presented. The results can help improve the future EBC-CMC system designs, validating the advanced EBC-CMC technologies for hot section turbine engine applications.

  16. Thermophysical and mechanical properties of SiC/SiC composites

    International Nuclear Information System (INIS)

    Zinkle, S.J.; Snead, L.L.

    1998-01-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits

  17. Interfacial push-out measurements of fully-bonded SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Steiner, D.; Zinkle, S.J.

    1990-01-01

    The direct measurement of interfacial bond strength and frictional resistance to sliding in a fully-bonded SiC/SiC composite is measured. It is shown that a fiber push-out technique can be utilized for small diameter fibers and very thin composite sections. Results are presented for a 22 micron thick section for which 37 out of 44 Nicalon fibers tested were pushed-out within the maximum nanoindentor load of 120 mN. Fiber interfacial yielding, push-out and sliding resistance were measured for each fiber. The distribution of interfacial strengths is treated as being Weibull in form. 14 refs., 5 figs

  18. GaN growth via HVPE on SiC/Si substrates: growth mechanisms

    Science.gov (United States)

    Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

    2017-11-01

    The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

  19. Technique development for modulus, microcracking, hermeticity, and coating evaluation capability characterization of SiC/SiC tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xunxiang [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ang, Caen K. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

    2016-08-01

    Driven by the need to enlarge the safety margins of nuclear fission reactors in accident scenarios, research and development of accident-tolerant fuel has become an important topic in the nuclear engineering and materials community. A continuous-fiber SiC/SiC composite is under consideration as a replacement for traditional zirconium alloy cladding owing to its high-temperature stability, chemical inertness, and exceptional irradiation resistance. An important task is the development of characterization techniques for SiC/SiC cladding, since traditional work using rectangular bars or disks cannot directly provide useful information on the properties of SiC/SiC composite tubes for fuel cladding applications. At Oak Ridge National Laboratory, experimental capabilities are under development to characterize the modulus, microcracking, and hermeticity of as-fabricated, as-irradiated SiC/SiC composite tubes. Resonant ultrasound spectroscopy has been validated as a promising technique to evaluate the elastic properties of SiC/SiC composite tubes and microcracking within the material. A similar technique, impulse excitation, is efficient in determining the basic mechanical properties of SiC bars prepared by chemical vapor deposition; it also has potential for application in studying the mechanical properties of SiC/SiC composite tubes. Complete evaluation of the quality of the developed coatings, a major mitigation strategy against gas permeation and hydrothermal corrosion, requires the deployment of various experimental techniques, such as scratch indentation, tensile pulling-off tests, and scanning electron microscopy. In addition, a comprehensive permeation test station is being established to assess the hermeticity of SiC/SiC composite tubes and to determine the H/D/He permeability of SiC/SiC composites. This report summarizes the current status of the development of these experimental capabilities.

  20. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  1. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Science.gov (United States)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  2. Joining of SiC/SiCf ceramic matrix composites for fusion reactor blanket applications

    International Nuclear Information System (INIS)

    Colombo, P.; Riccardi, B.; Donato, A.; Scarinci, G.

    2000-01-01

    Using a preceramic polymer, joints between SiC/SiC f ceramic matrix composites were obtained. The polymer, upon pyrolysis at high temperature, transforms into a ceramic material and develops an adhesive bonding with the composite. The surface morphology of 2D and 3D SiC/SiC f composites did not allow satisfactory results to be obtained by a simple application of the method initially developed for monolithic SiC bodies, which employed the use of a pure silicone resin. Thus, active or inert fillers were mixed with the preceramic polymer, in order to reduce its volumetric shrinkage which occurs during pyrolysis. In particular, the joints realized using the silicone resin with Al-Si powder as reactive additive displayed remarkable shear strength (31.6 MPa maximum). Large standard deviation for the shear strength has nevertheless been measured. The proposed joining method is promising for the realization of fusion reactor blanket structures, even if presently the measured strength values are not fully satisfactory

  3. Fabrication of laminated ZrC-SiC composite by vacuum hot-pressing sintering

    Directory of Open Access Journals (Sweden)

    Yuanyuan Li

    2015-03-01

    Full Text Available Laminated ZrC-SiC ceramic was prepared through tape casting and hot pressing. The green tapes of ZrC and SiC were prepared at room temperature. In order to improve the density of composite, the binder of green tapes were removed at 550 °C for 1 h. The laminated structure and the cracks propagation path, which is not a straight line, are observed by optical metalloscope. The compact laminated ZrC-SiC composite sintered by vacuum hot-pressing at 1650 °C for 90 min under pressure of 20 MPa was researched by X-ray diffraction and scanning electron microscopy (SEM equipped with energy dispersive X-ray analysis. The results showed that interlayer bonding is tight, and no disordered phase has formed in the interlayers of ZrC or SiC, and the combination mode is physical mechanism.

  4. Influence of Constituents on Creep Properties of SiC/SiC Composites

    Science.gov (United States)

    Bhatt, R.; DiCarlo, J.

    2016-01-01

    SiC-SiC composites are being considered as potential candidate materials for next generation turbine components such as combustor liners, nozzle vanes and blades because of their low density, high temperature capability, and tailorable mechanical properties. These composites are essentially fabricated by infiltrating matrix into a stacked array of fibers or fiber preform by one or a combination of manufacturing methods such as, Melt Infiltration (MI) of molten silicon metal, Chemical Vapor Infiltration (CVI), Polymer Infiltration and Pyrolysis (PIP). To understand the influence of constituents, the SiC-SiC composites fabricated by MI, CVI, and PIP methods were creep tested in air between 12000 and 14500 degrees Centigrade for up to 500 hours. The failed specimens were analyzed under a scanning electron microscope to assess damage mechanisms. Also, knowing the creep deformation parameters of the fiber and the matrix under the testing conditions, the creep behavior of the composites was modeled and compared with the measured data. The implications of the results on the long term durability of these composites will be discussed.

  5. Advanced Environmental Barrier Coating Development for SiC-SiC Ceramic Matrix Composite Components

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Halbig, Michael Charles; Puleo, Bernadette J.; Costa, Gustavo; Mccue, Terry R.

    2017-01-01

    This presentation reviews the NASA advanced environmental barrier coating (EBC) system development for SiC-SiC Ceramic Matrix Composite (CMC) combustors particularly under the NASA Environmentally Responsible Aviation, Fundamental Aeronautics and Transformative Aeronautics Concepts Programs. The emphases have been placed on the current design challenges of the 2700-3000F capable environmental barrier coatings for low NOX emission combustors for next generation turbine engines by using advanced plasma spray based processes, and the coating processing and integration with SiC-SiC CMCs and component systems. The developments also have included candidate coating composition system designs, degradation mechanisms, performance evaluation and down-selects; the processing optimizations using TriplexPro Air Plasma Spray Low Pressure Plasma Spray (LPPS), Plasma Spray Physical Vapor Deposition and demonstration of EBC-CMC systems. This presentation also highlights the EBC-CMC system temperature capability and durability improvements under the NASA development programs, as demonstrated in the simulated engine high heat flux, combustion environments, in conjunction with high heat flux, mechanical creep and fatigue loading testing conditions.

  6. Theoretical studies on band structure and optical properties of 3C-SiC by FPLAPW

    International Nuclear Information System (INIS)

    Xu, P.; Xie, C.; Xu, F.; Pan, H.

    2004-01-01

    Full text: SiC has attracted more interests because of its great technological importance in microelectronic and photoelectronic devices. We have studied the band structure and optical properties of 3C-SiC by using a Full Potential Linearized Augmented Plane Waves (FPLAPW) method. The partial density of states (DOS) of Si and C atoms as well as the band structure of 3C-SiC are presented. The calculated band gap is 1.30eV, which is much less than the experimental value. It is attributed to a deficiency of the local density theory. The imaginary part of the dielectric function has been obtained directly from the band structure calculation. With the band gap correction, the real part of the dielectric function has been derived from the imaginary part by Kramers Kronig (K-K) dispersion relationship. The calculated results are in good agreement with the results measured by Petalas et al. by using ultraviolet spectroscopic ellipsometry in the photon energy range of 5eV-10eV. The band-to-band transition can be identified from the critical points exhibited in the calculated dielectric function, which is consistent with the experimental results of Petalas et al. The refractive index, extinction coefficient and reflectivity have also been calculated from obtained dielectric function, which are in agreement with the experimental results of Logothetidis and Lambrecht

  7. Structural investigation of the amorphous/crystalline interface by means of quantitative high-resolution transmission electron microscopy on the systems a-Si/c-Si and a-Ge/c-Si; Strukturelle Untersuchung der amorph/kristallinen Grenzflaeche mittels quantitativer hochaufloesender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, K.

    2006-11-02

    In this Thesis the interfaces between covalently bonded crystalline and amorphous materials were studied with regard to the induced ordering in the amorphous material in the interfacial region by means of high-resolution transmission electron microscopy (HREM). The interface between amorphous germanium and crystalline silicon and the interface between amorphous and crystalline silicon served as material system. In order to quantify the influence of the crystalline order on the amorphous material, the HREM images were periodically averaged along the interface. The intensity components, which are correlated with the period of the lattice image, could thus be separated from the statistical intensity fluctuations, which are characteristic for images of amorphous materials. Since amorphous materials can only be described meaningful by statistical distribution functions, for the induced order a three-dimensional distribution function {rho}{sub 3D}(r) was taken as a basis, which describes the probability to find an atom in the amorphous material, if r=0 is the position of an atom in the crystal. Its two-dimensional projection, {rho}, can be determined using iterative image matching techniques on averaged experimental and simulated interface images. For the analyzed material systems {rho} exhibits lateral ordering as well as a pronounced layering in the vicinity of the interface. In the case of the a-Si/c-Si sample the mean orientation of bonds was 70.5 , as is in the case of the undistorted diamond lattice, while for the a-Ge/c-Si sample 65 resulted. The standard deviation for the distribution of the deviations from the mean bond angle yields for the a-Ge/c-Si sample in the first atomic layer a value of 11.3 and for the a-Si/c-Si sample 1.9 . These results suggest the conclusion, that the differences in these values are to be interpreted as the reaction of the amorphous material to the volume misfit. Although for both material systems 1.4 nm was calculated for the width

  8. Epitaxial growth of 3C-SiC by using C{sub 60} as a carbon source; Untersuchungen zum epitaktischen Wachstum von 3C-SiC bei Verwendung einer C{sub 60}-Kohlenstoffquelle

    Energy Technology Data Exchange (ETDEWEB)

    Schreiber, Sascha

    2006-01-15

    Within this work epitaxial 3C-SiC-films were grown on Si(001) substrates and on ion beam synthesized 3C-SiC(001) pseudo substrates. A rather new process was used which is based on the simultaneous deposition of C60 and Si. In order to set up the necessary experimental conditions an ultra-high vacuum chamber has been designed and built. A RHEED system was used to examine SiC film growth in-situ. Using the described technique 3C-SiC films were grown void-free on Si(001) substrates. Deposition rates of C60 and Si were chosen adequately to maintain a Si:C ratio of approximately one during the deposition process. It was shown that stoichiometric and epitaxial 3C-SiC growth with the characteristic relationship (001)[110]Si(001)[110]3C-SiC could be achieved. TEM investigations revealed that the grown 3C-SiC films consist of individual grains that extend from the Si substrate to the film surface. Two characteristic grain types could be identified. The correlation between structure and texture of void-free grown 3C-SiC films and film thickness was studied by X-ray diffraction (XRD). Pole figure measurements showed that thin films only contain first-order 3C-SiC twins. With higher film thickness also second-order twins are found which are located as twin lamellae in grain type 2. Improvement of polar texture with increasing film thickness couldn't be observed in the investigated range of up to 550 nm. On ion beam synthesized 3C-SiC pseudo substrates homoepitaxial 3C-SiC growth could be demonstrated for the first time by using a C{sub 60} carbon source. In respect to the crystalline quality of the grown films the surface quality of the used substrates was identified as a crucial factor. Furthermore a correlation between the ratio of deposition rates of C{sub 60} and Si and 3C-SiC film quality could be found. Under silicon-rich conditions, i.e. with a Si:C ratio of slightly greater one, homoepitaxial 3C-SiC layer-by-layer growth can be achieved. Films grown under these

  9. Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL

    2013-09-01

    This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.

  10. Ion beam synthesis and characterization of large area 3C-SiC pseudo substrates for homo- and heteroepitaxy; Ionenstrahlsynthese und Charakterisierung grossflaechiger 3C-SiC-Pseudosubstrate fuer die Homo- und Heteroepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Haeberlen, Maik

    2006-12-15

    In this work, large area epitaxial 3C-SiC films on Si(100) and Si(111) were formed by ion beam synthesis and subsequently characterized for their structural and crystalline properties. These SiC/Si structures are meant to be used as SiC pseudosubstrates for the homo- and heteroepitaxial growth of other compound semiconductors. The suitability of these pseudosubstrates for this purpose was tested using various epitaxial systems and thin film growth methods. For this the homoepitaxial growth of 3C-SiC employing C{sub 60}-MBE and the heteroepitaxial growth of hexagonal GaN films grown by MOCVD and IBAMBA was studied in detail. The comparison of the structural and crystalline properties with data from literature enabled a qualified judgement of the potential of the 3C-SiC pseudosubstrates as an alternative substrate for the epitaxial growth of such films. These new 3C-SiC pseudosubstrates also enabled studies of other little known epitaxial systems: For the first time hexagonal ZnO films on (111) oriented pseudosubstrates were grown using PLD. The method if IBAMBE enabled the growth of cubic GaN layers on (100)-oriented pseudosubstrates. (orig.)

  11. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  12. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  13. Porphyrin conjugated SiC/SiOx nanowires for X-ray-excited photodynamic therapy

    Science.gov (United States)

    Rossi, F.; Bedogni, E.; Bigi, F.; Rimoldi, T.; Cristofolini, L.; Pinelli, S.; Alinovi, R.; Negri, M.; Dhanabalan, S. C.; Attolini, G.; Fabbri, F.; Goldoni, M.; Mutti, A.; Benecchi, G.; Ghetti, C.; Iannotta, S.; Salviati, G.

    2015-01-01

    The development of innovative nanosystems opens new perspectives for multidisciplinary applications at the frontier between materials science and nanomedicine. Here we present a novel hybrid nanosystem based on cytocompatible inorganic SiC/SiOx core/shell nanowires conjugated via click-chemistry procedures with an organic photosensitizer, a tetracarboxyphenyl porphyrin derivative. We show that this nanosystem is an efficient source of singlet oxygen for cell oxidative stress when irradiated with 6 MV X-Rays at low doses (0.4-2 Gy). The in-vitro clonogenic survival assay on lung adenocarcinoma cells shows that 12 days after irradiation at a dose of 2 Gy, the cell population is reduced by about 75% with respect to control cells. These results demonstrate that our approach is very efficient to enhance radiation therapy effects for cancer treatments.

  14. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  15. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  16. Oxidation-resistant interface coatings for SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Kupp, E.R.; Hurley, J.W.; Lowden, R.A. [Oak Ridge National Lab., TN (United States)] [and others

    1996-08-01

    The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

  17. Electric measurements of PV heterojunction structures a-SiC/c-Si

    Science.gov (United States)

    Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

    2018-01-01

    Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

  18. Formation of permeation barriers on ceramic SiC/SiC composites

    International Nuclear Information System (INIS)

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  19. Characterization on C/SiC Ceramic Matrix Composites with Novel Fiber Coatings

    Science.gov (United States)

    Petko, Jeanne; Kiser, J. Douglas; McCue, Terry; Verrilli, Michael

    2002-01-01

    Ceramic Matrix Composites (CMCs) are attractive candidate materials in the aerospace industry due to their high specific strength, low density and higher temperature capabilities. The National Aeronautics and Space Administration (NASA) is pursuing the use of CMC components in advanced Reusable Launch Vehicle (RLV) propulsion applications. Carbon fiber-reinforced silicon carbide (C/SiC) is the primary material of interest for a variety of RLV propulsion applications. These composites offer high- strength carbon fibers and a high modulus, oxidation-resistant matrix. For comparison, two types of carbon fibers were processed with novel types of interface coatings (multilayer and pseudoporous). For RLV propulsion applications, environmental durability will be critical. The coatings show promise of protecting the carbon fibers from the oxidizing environment. The strengths and microstructures of these composite materials are presented.

  20. Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

    2008-03-15

    Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.

  1. Electronic properties of {mu}c-Si:H layers investigated with Hall measurements

    Energy Technology Data Exchange (ETDEWEB)

    Bronger, T

    2007-02-28

    In the present work, the electronic properties of thin layers of PECVD-grown {mu}c-Si:H have been examined using the Hall effect. The main focus was on the mobility of the carriers because this is a crucial limiting factor for the electronic quality of this material, however, the density of free carriers as well as the conductivity were also determined. In order to get a picture as comprehensive as possible, a sample matrix was studied consisting of samples with different n-type doping levels and different crystallinities. Additionally, doped samples with artificially implanted defects which could be annealed gradually were investigated. All measurements have been made temperature-dependently. During the work, a new computer control and analysis program was developed from scratch for the Hall setup. It allows for high automation as well as comprehensive error estimation, both of which being very important for high ohmic samples. All samples showed a thermally activated mobility and carrier concentration, however, there is no single activation energy. Instead, all Arrhenius plots exhibited a more or less pronounced convex curvature. This curvature was identified with the parallel connection of a broad distribution of barriers in the material, which are limiting to the transport and are overcome by thermoionic emission. From this, the model of normally distributed barriers (NDB) was derived, mathematically investigated, and successfully applied to the experimental data of this work and (for not too highly doped samples) of other works. As a significant validation of the NDB model, the relative room-temperature mobility values could be calculated just from the Arrhenius slopes and curvatures. A very important dependence turned out to be mobility versus carrier concentration. In particular the annealed sample showed a clear {mu} {proportional_to} n{sup 1/2} behaviour, which could be backed with the sample matrix. Additionally, Hall measurements on HWCVD-grown {mu}c-Si

  2. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  3. Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

    Directory of Open Access Journals (Sweden)

    Erick Omondi Ateto

    2016-01-01

    Full Text Available We investigated the antireflective (AR effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H exhibit a short circuit current density (Jsc of 38.65 mA/cm2 and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.

  4. High-efficient production of SiC/SiO2 core-shell nanowires for effective microwave absorption

    KAUST Repository

    Zhong, Bo; Sai, Tianqi; Xia, Long; Yu, Yuanlie; Wen, Guangwu

    2017-01-01

    In the current report, we have demonstrated that the high-efficient production of SiC/SiO2 core-shell nanowires can be achieved through the introduction of trace of water vapor during the chemical vapor deposition process. The yield of the SiC/SiO2 core-shell nanowires is dramatically improved due to the introduction of water vapor. The SiC/SiO2 core-shell nanowires exhibit an excellent microwave absorption property in the frequency range of 2.0–18.0GHz with a very low weight percentage of 0.50wt.% in the absorbers. A minimum reflection loss value of −32.72dB (>99.99% attenuation) at 13.84GHz has been observed with the absorber thickness of 3.0mm. Moreover, the SiC/SiO2 core-shell nanowires based absorber can reach an effective absorption bandwidth (<−10dB) of 5.32GHz with the absorber thickness of 3.5mm. Furthermore, a possible absorption mechanism is also proposed in detail for such effective attenuation of microwave which can be attributed to the dielectric loss and magnetic loss of SiC/SiO2 core-shell nanowires.

  5. High-efficient production of SiC/SiO2 core-shell nanowires for effective microwave absorption

    KAUST Repository

    Zhong, Bo

    2017-02-21

    In the current report, we have demonstrated that the high-efficient production of SiC/SiO2 core-shell nanowires can be achieved through the introduction of trace of water vapor during the chemical vapor deposition process. The yield of the SiC/SiO2 core-shell nanowires is dramatically improved due to the introduction of water vapor. The SiC/SiO2 core-shell nanowires exhibit an excellent microwave absorption property in the frequency range of 2.0–18.0GHz with a very low weight percentage of 0.50wt.% in the absorbers. A minimum reflection loss value of −32.72dB (>99.99% attenuation) at 13.84GHz has been observed with the absorber thickness of 3.0mm. Moreover, the SiC/SiO2 core-shell nanowires based absorber can reach an effective absorption bandwidth (<−10dB) of 5.32GHz with the absorber thickness of 3.5mm. Furthermore, a possible absorption mechanism is also proposed in detail for such effective attenuation of microwave which can be attributed to the dielectric loss and magnetic loss of SiC/SiO2 core-shell nanowires.

  6. Fiber/matrix interfacial thermal conductance effect on the thermal conductivity of SiC/SiC composites

    International Nuclear Information System (INIS)

    Nguyen, Ba Nghiep; Henager, Charles H.

    2013-01-01

    SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby–Mori–Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al. [J. Nucl. Mater. 307–311 (2002) 1120–1125, Fusion Sci. Technol. 45 (2004) 583–591, Compos. Sci. Technol. 62 (2002) 1127–1139.

  7. Simulation of Degraded Properties of 2D plain Woven C/SiC Composites under Preloading Oxidation Atmosphere

    Science.gov (United States)

    Chen, Xihui; Sun, Zhigang; Sun, Jianfen; Song, Yingdong

    2017-12-01

    In this paper, a numerical model which incorporates the oxidation damage model and the finite element model of 2D plain woven composites is presented for simulation of the oxidation behaviors of 2D plain woven C/SiC composite under preloading oxidation atmosphere. The equal proportional reduction method is firstly proposed to calculate the residual moduli and strength of unidirectional C/SiC composite. The multi-scale method is developed to simulate the residual elastic moduli and strength of 2D plain woven C/SiC composite. The multi-scale method is able to accurately predict the residual elastic modulus and strength of the composite. Besides, the simulated residual elastic moduli and strength of 2D plain woven C/SiC composites under preloading oxidation atmosphere show good agreements with experimental results. Furthermore, the preload, oxidation time, temperature and fiber volume fractions of the composite are investigated to show their influences upon the residual elastic modulus and strength of 2D plain woven C/SiC composites.

  8. Ion beam synthesis and characterization of large area 3C-SiC pseudo substrates for homo- and heteroepitaxy

    International Nuclear Information System (INIS)

    Haeberlen, Maik

    2006-12-01

    In this work, large area epitaxial 3C-SiC films on Si(100) and Si(111) were formed by ion beam synthesis and subsequently characterized for their structural and crystalline properties. These SiC/Si structures are meant to be used as SiC pseudosubstrates for the homo- and heteroepitaxial growth of other compound semiconductors. The suitability of these pseudosubstrates for this purpose was tested using various epitaxial systems and thin film growth methods. For this the homoepitaxial growth of 3C-SiC employing C 60 -MBE and the heteroepitaxial growth of hexagonal GaN films grown by MOCVD and IBAMBA was studied in detail. The comparison of the structural and crystalline properties with data from literature enabled a qualified judgement of the potential of the 3C-SiC pseudosubstrates as an alternative substrate for the epitaxial growth of such films. These new 3C-SiC pseudosubstrates also enabled studies of other little known epitaxial systems: For the first time hexagonal ZnO films on (111) oriented pseudosubstrates were grown using PLD. The method if IBAMBE enabled the growth of cubic GaN layers on (100)-oriented pseudosubstrates. (orig.)

  9. Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

    International Nuclear Information System (INIS)

    Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

    1992-01-01

    Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

  10. Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

    Science.gov (United States)

    Landheer, Kees; Bronsveld, Paula C. P.; Poulios, Ioannis; Tichelaar, Frans D.; Kaiser, Monja; Schropp, Ruud E. I.; Rath, Jatin K.

    2017-02-01

    An Ar-H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c-Si/SiOx:H/a-Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar-H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c-Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

  11. Creep Behavior of Hafnia and Ytterbium Silicate Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Fox, Dennis S.; Ghosn, Louis J.; Harder, Bryan

    2011-01-01

    Environmental barrier coatings will play a crucial role in future advanced gas turbine engines because of their ability to significantly extend the temperature capability and stability of SiC/SiC ceramic matrix composite (CMC) engine components, thus improving the engine performance. In order to develop high performance, robust coating systems for engine components, appropriate test approaches simulating operating temperature gradient and stress environments for evaluating the critical coating properties must be established. In this paper, thermal gradient mechanical testing approaches for evaluating creep and fatigue behavior of environmental barrier coated SiC/SiC CMC systems will be described. The creep and fatigue behavior of Hafnia and ytterbium silicate environmental barrier coatings on SiC/SiC CMC systems will be reported in simulated environmental exposure conditions. The coating failure mechanisms will also be discussed under the heat flux and stress conditions.

  12. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  13. Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Murata, Daisuke; Yuguchi, Tetsuya; Fujiwara, Hiroyuki

    2014-01-01

    In order to perform the structural characterization of Si thin-film solar cells having submicron-size rough textured surfaces, we have developed an optical model that can be utilized for the spectroscopic ellipsometry (SE) analysis of a multilayer solar cell structure consisting of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) layers fabricated on textured SnO 2 :F substrates. To represent the structural non-uniformity in the textured structure, the optical response has been calculated from two regions with different thicknesses of the Si layers. Moreover, in the optical model, the interface layers are modeled by multilayer structures assuming two-phase composites and the volume fractions of the phases in the layers are controlled by the structural curvature factor. The polarized reflection from the μc-Si:H layer that shows extensive surface roughening during the growth has also been modeled. In this study, a state-of-the-art solar cell structure with the textured μc-Si:H (2000 nm)/ZnO (100 nm)/a-Si:H (200 nm)/SnO 2 :F/glass substrate structure has been characterized. The μc-Si:H/a-Si:H textured structure deduced from our SE analysis shows remarkable agreement with that observed by transmission electron microscopy. From the above results, we have demonstrated the high-precision characterization of highly-textured μc-Si:H/a-Si:H solar cell structures. - Highlights: • Characterization of textured μc-Si:H/a-Si:H solar cell structures by ellipsometry • A new optical model using surface area and multilayer models • High precision characterization of submicron-range rough interface structures

  14. PIE of nuclear grade SiC/SiC flexural coupons irradiated to 10 dpa at LWR temperature

    Energy Technology Data Exchange (ETDEWEB)

    Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-03-01

    Silicon carbide fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230–340°C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials are chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC)-coated Hi-NicalonTM Type-S (HNS), TyrannoTM SA3 (SA3), and SCS-UltraTM (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young’s modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young’s moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

  15. Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces

    International Nuclear Information System (INIS)

    Tanaka, Shingo; Kohyama, Masanori

    2003-01-01

    Ab initio pseudopotential calculation of 3C-SiC(1 1 1)/Al nano-hetero interfaces have been performed and interface atom species dependence (IASD) and interface orientation dependence (IOD) of nano-hetero interfaces between 3C-SiC ((1 1 1) or (0 0 1) orientation) and metal (Ti or Al) have been studied systematically. Stable atomic configurations of the 3C-SiC(1 1 1)/Al interfaces are quite different from those of the 3C-SiC(1 1 1)/Ti interfaces. Two terminated, Si-terminated (Si-TERM) and C-terminated (C-TERM), 3C-SiC(1 1 1)/Al interfaces have covalent bonding nature. In 3C-SiC/M (M = Ti or Al) nano-hetero interfaces, the C-terminated interface has relative strong, covalent and ionic C-Ti or C-Al bonds as TiC or SiC while the Si-terminated interface has various type of bonding nature, relative weak Si-Ti or Si-Al bonds from metallic character at the (0 0 1) interface to covalent character at the (1 1 1) interface. Adhesive energy (AE) shows strong IASD and IOD. The AE of the C-terminated interface is larger than that of the Si-terminated one. In the C-terminated interface, the AE of the (1 1 1) interface is smaller than that of the (0 0 1) one while in the Si-terminated interface there exists opposite interrelation. Schottky barrier height (SBH) also shows strong IASD and IOD. The SBH of the C-terminated interface is smaller than that of the Si-terminated one. The C-terminated SiC/Al interfaces have extremely small SBHs. In comparison with some experimental SBH, the present result is reliable as the difference of SBH between the two terminated interfaces and qualitative properties

  16. The Present Status of SiC/SiC R and D for Nuclear Application in Japan

    International Nuclear Information System (INIS)

    Kohyama, Akira

    2011-01-01

    SiC/SiC R and D for nuclear application in Japan is quite active under the coordinated activities of Atomic Energy Society of Japan's committee on 'Applications of Ceramic Materials for Advanced Nuclear Power Systems' and mainly government funded nuclear engineering/materials activities collaborating academia and industries. Start with the brief introduction of those activities, representing research activities are introduced. ITER and BA related SiC/SiC activities are emphasized, followed by introductions of extensive OASIS, Muroran Institute of Technology activities. The importance of international collaboration and strategic planning is mentioned.

  17. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  18. Advanced SiC/SiC Ceramic Composites For Gas-Turbine Engine Components

    Science.gov (United States)

    Yun, H. M.; DiCarlo, J. A.; Easler, T. E.

    2004-01-01

    NASA Glenn Research Center (GRC) is developing a variety of advanced SiC/SiC ceramic composite (ASC) systems that allow these materials to operate for hundreds of hours under stress in air at temperatures approaching 2700 F. These SiC/SiC composite systems are lightweight (approximately 30% metal density) and, in comparison to monolithic ceramics and carbon fiber-reinforced ceramic composites, are able to reliably retain their structural properties for long times under aggressive gas-turbine engine environments. The key for the ASC systems is related first to the NASA development of the Sylramic-iBN Sic fiber, which displays higher thermal stability than any other SiC- based ceramic fibers and possesses an in-situ grown BN surface layer for higher environmental durability. This fiber is simply derived from Sylramic Sic fiber type that is currently produced at ATK COI Ceramics (COIC). Further capability is then derived by using chemical vapor infiltration (CVI) and/or polymer infiltration and pyrolysis (PIP) to form a Sic-based matrix with high creep and rupture resistance as well as high thermal conductivity. The objectives of this study were (1) to optimize the constituents and processing parameters for a Sylramic-iBN fiber reinforced ceramic composite system in which the Sic-based matrix is formed at COIC almost entirely by PIP (full PIP approach), (2) to evaluate the properties of this system in comparison to other 2700 F Sylramic-iBN systems in which the matrix is formed by full CVI and CVI + PIP, and (3) to examine the pros and cons of the full PIP approach for fabricating hot-section engine components. A key goal is the development of a composite system with low porosity, thereby providing high modulus, high matrix cracking strength, high interlaminar strength, and high thermal conductivity, a major property requirement for engine components that will experience high thermal gradients during service. Other key composite property goals are demonstration at

  19. 3C-SiC microdisk mechanical resonators with multimode resonances at radio frequencies

    Science.gov (United States)

    Lee, Jaesung; Zamani, Hamidrera; Rajgopal, Srihari; Zorman, Christian A.; X-L Feng, Philip

    2017-07-01

    We report on the design, modeling, fabrication and measurement of single-crystal 3C-silicon carbide (SiC) microdisk mechanical resonators with multimode resonances operating at radio frequencies (RF). These microdisk resonators (center-clamped on a vertical stem pedestal) offer multiple flexural-mode resonances with frequencies dependent on both disk and anchor dimensions. The resonators are made using a novel fabrication method comprised of focused ion beam nanomachining and hydroflouic : nitric : acetic (HNA) acid etching. Resonance peaks (in the frequency spectrum) are detected through laser-interferometry measurements. Resonators with different dimensions are tested, and multimode resonances, mode splitting, energy dissipation (in the form of quality factor measurement) are investigated. Further, we demonstrate a feedback oscillator based on a passive 3C-SiC resonator. This investigation provides important guidelines for microdisk resonator development, ranging from an analytical prediction of frequency scaling law to fabrication, suggesting RF microdisk resonators can be good candidates for future sensing applications in harsh environments.

  20. Fabrication and characterization of a polycrystalline 3C-SiC piezoresistive micro-pressure sensor

    International Nuclear Information System (INIS)

    Chung, Gwiy-Sang

    2010-01-01

    This paper describes polycrystalline (poly) 3C-SiC piezoresistive micro-pressure sensors for extreme environment applications prepared with a combination crystal growth technology using chemical vapor deposition (CVD) and micromachining techniques. The device was designed using bulk micromachining under a 1 x 1 mm 2 diaphragm and a Si membrane with a thickness of 20 μm. The pressure sensitivities of the fabricated pressure sensors were 0.1 mV/V·bar. The nonlinearity of the devices was ±0.44%·FS, and the hysteresis was 0.61%·FS. The temperature characteristics of the temperature coefficient of sensitivity (TCS), the temperature coefficient of resistance (TCR), and the temperature coefficient of the gauge factor (TCGF) were also evaluated. The TCS of the pressure sensors was -1,867 ppm/ .deg. C, the TCR was -792 ppm/ .deg. C, and the TCGF to 5 bars was -1,042 ppm/ .deg. C, from 25 to 400 .deg. C.

  1. SiC/SiC Leading Edge Turbine Airfoil Tested Under Simulated Gas Turbine Conditions

    Science.gov (United States)

    Robinson, R. Craig; Hatton, Kenneth S.

    1999-01-01

    Silicon-based ceramics have been proposed as component materials for use in gas turbine engine hot-sections. A high pressure burner rig was used to expose both a baseline metal airfoil and ceramic matrix composite leading edge airfoil to typical gas turbine conditions to comparatively evaluate the material response at high temperatures. To eliminate many of the concerns related to an entirely ceramic, rotating airfoil, this study has focused on equipping a stationary metal airfoil with a ceramic leading edge insert to demonstrate the feasibility and benefits of such a configuration. Here, the idea was to allow the SiC/SiC composite to be integrated as the airfoil's leading edge, operating in a "free-floating" or unrestrained manner. and provide temperature relief to the metal blade underneath. The test included cycling the airfoils between simulated idle, lift, and cruise flight conditions. In addition, the airfoils were air-cooled, uniquely instrumented, and exposed to the same internal and external conditions, which included gas temperatures in excess of 1370 C (2500 F). Results show the leading edge insert remained structurally intact after 200 simulated flight cycles with only a slightly oxidized surface. The instrumentation clearly suggested a significant reduction (approximately 600 F) in internal metal temperatures as a result of the ceramic leading edge. The object of this testing was to validate the design and analysis done by Materials Research and Design of Rosemont, PA and to determine the feasibility of this design for the intended application.

  2. High temperature energy harvesters utilizing ALN/3C-SiC composite diaphragms

    Science.gov (United States)

    Lai, Yun-Ju; Li, Wei-Chang; Felmetsger, Valery V.; Senesky, Debbie G.; Pisano, Albert P.

    2014-06-01

    Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C-SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm2 under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

  3. Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

    Science.gov (United States)

    Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

    2018-04-01

    A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

  4. Characterization of C/SiC Ceramic Matrix Composites (CMCs) with Novel Interface Fiber Coatings

    Science.gov (United States)

    Petko, Jeanne F.; Kiser, J. Douglas; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Ceramic Matrix Composites (CMCs) are attractive candidate aerospace materials due to their high specific strength, low density and high temperature capabilities. The National Aeronautics and Space Administration (NASA) is pursuing the use of CMC components in advanced Reusable Launch Vehicle (RLV) propulsion applications. Carbon fiber-reinforced silicon carbide (C/SiC) is the primary material of interest for a variety of RLV propulsion applications. These composites consist of high-strength carbon fibers and a high modulus, oxidation resistant matrix. For RLV propulsion applications, environmental durability will be critical. Two types of carbon fibers were processed with both standard (pyrolytic carbon) and novel (multilayer and pseudoporous) types of interface coatings as part of a study investigating various combinations of constituents. The benefit of protecting the composites with a surface sealant was also investigated. The strengths, durability in oxidizing environments, and microstructures of these developmental composite materials are presented. The novel interface coatings and the surface sealant show promise for protecting the carbon fibers from the oxidizing environment.

  5. Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pla, J.; Tamasi, M.; Rizzoli, R.; Losurdo, M.; Centurioni, E.; Summonte, C.; Rubinelli, F

    2003-02-03

    A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80-95 nm, depending on the solar cell spectral response, and a thickness tolerance of {+-}10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the 'Analysis of Microelectronic and Photonic Structures' code are reported.

  6. Packaging Technologies for 500C SiC Electronics and Sensors

    Science.gov (United States)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  7. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    NARCIS (Netherlands)

    Hoex, B.; Gielis, J.J.H.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2008-01-01

    Al2 O3 is a versatile high- ¿ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface

  8. The effect of grain size and phosphorous-doping of polycrystalline 3C-SiC on infrared reflectance spectra

    Energy Technology Data Exchange (ETDEWEB)

    Rooyen, I.J. van, E-mail: Isabella.vanRooyen@inl.gov [Fuel Performance and Design Department, Idaho National Laboratory, Idaho Falls, ID 83415-6188 (United States); Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Engelbrecht, J.A.A. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A.; Janzen, E. [Department of Physics, Chemistry and Biology, Semiconductor Materials, Linkoeping University, Linkoeping 58183 (Sweden); Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Rooyen, P.M. van [Philip M van Rooyen Network Consultants, Midlands Estates (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer IR is investigated as a technique to measure grain size and P-doping of polycrystalline SiC. Black-Right-Pointing-Pointer Infrared plasma minima can be used to determine doping levels in 3C-SiC for doping levels greater than 5 Multiplication-Sign 10{sup 17} cm{sup -3}. Black-Right-Pointing-Pointer A linear relationship is found between FWHM and the inverse of grain size of 3C-SiC irrespective of P-doping level. Black-Right-Pointing-Pointer It is further found that {omega}{sub p} is not influenced by the grain size. Black-Right-Pointing-Pointer P-doping level has no significant effect on the linear relationship between grain size and surface roughness. - Abstract: The effect of P-doping and grain size of polycrystalline 3C-SiC on the infrared reflectance spectra is reported. The relationship between grain size and full width at half maximum (FWHM) suggest that the behavior of the 3C-SiC with the highest phosphorous doping level (of 1.2 Multiplication-Sign 10{sup 19} at. cm{sup -3}) is different from those with lower doping levels (<6.6 Multiplication-Sign 10{sup 18} at. cm{sup -3}). It is also further demonstrated that the plasma resonance frequency ({omega}{sub p}) is not influenced by the grain size.

  9. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance

    Directory of Open Access Journals (Sweden)

    Alvarez J.

    2012-07-01

    Full Text Available Solar cells based on silicon nano- or micro-wires have attracted much attention as a promising path for low cost photovoltaic technology. The key point of this structure is the decoupling of the light absorption from the carriers collection. In order to predict and optimize the performance potential of p- (or n- doped c-Si/ n-(or p- doped a-Si:H nanowire-based solar cells, we have used the Silvaco-Atlas software to model a single-wire device. In particular, we have noticed a drastic decrease of the open-circuit voltage (Voc when increasing the doping density of the silicon core beyond an optimum value. We present here a detailed study of the parameters that can alter the Voc of c-Si(p/a-Si:H (n wires according to the doping density in c-Si. A comparison with simulation results obtained on planar c-Si/a-Si:H heterojunctions shows that the drop in Voc, linked to an increase of the dark current in both structures, is more pronounced for radial junctions due to geometric criteria. These numerical modelling results have lead to a better understanding of transport phenomena within the wire.

  10. Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

    2012-06-01

    The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

  11. Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cells

    NARCIS (Netherlands)

    Macco, Bart; Black, Lachlan E.; Melskens, Jimmy; van de Loo, Bas W.H.; Berghuis, Willem Jan H.; Verheijen, Marcel A.; Kessels, Wilhelmus M.M.

    2018-01-01

    Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored

  12. Tasks for development of SiC/SiC composites as structural material in a fusion reactor

    International Nuclear Information System (INIS)

    Yamada, Reiji

    1997-01-01

    SiC/SiC composites are chosen for a structural material of blankets in DREAM Reactor that has been proposed as a power reactor by JAERI. The main requirements and the target values in the DREAM conceptual design were described, and compared to available experimental data. (author)

  13. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

    Science.gov (United States)

    Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

    2016-08-01

    Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

  14. In Situ Strength Model for Continuous Fibers and Multi-Scale Modeling the Fracture of C/SiC Composites

    Science.gov (United States)

    Zhang, Sheng; Gao, Xiguang; Song, Yingdong

    2018-04-01

    A new in situ strength model of carbon fibers was developed based on the distribution of defects to predict the stress-strain response and the strength of C/SiC composites. Different levels of defects in the fibers were considered in this model. The defects in the fibers were classified by their effects on the strength of the fiber. The strength of each defect and the probability that the defect appears were obtained from the tensile test of single fibers. The strength model of carbon fibers was combined with the shear-lag model to predict the stress-strain responses and the strengths of fiber bundles and C/SiC minicomposites. To verify the strength model, tensile tests were performed on fiber bundles and C/SiC minicomposites. The predicted and experimental results were in good agreement. Effects of the fiber length, the fiber number and the heat treatment on the final strengths of fiber bundles and C/SiC minicomposites were also discussed.

  15. Effect of heat treatment on microstructure and mechanical properties of PIP-SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-01-01

    Continuous SiC fibre reinforced SiC matrix composites (SiC/SiC) have been studied as materials for heat resistant and nuclear applications. Thermal stability is one of the key issues for SiC/SiC composites. In this study, 3D SiC/SiC composites are fabricated via the polymer impregnation and pyrolysis (PIP) process, and then heat treated at 1400 Degree-Sign C, 1600 Degree-Sign C and 1800 Degree-Sign C in an inert atmosphere for 1 h, respectively. The effect of heat treatment on microstructure and mechanical properties of the composites is investigated. The results indicate that the mechanical properties of the SiC/SiC composites are significantly improved after heat treatment at 1400 Degree-Sign C mainly because the mechanical properties of the matrix are greatly improved due to crystallisation. With the increasing of heat treatment temperature, the properties of the composites are conversely decreased because of severe damage of the fibres and the matrix.

  16. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  17. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  18. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

    International Nuclear Information System (INIS)

    Yan, Guoguo; Zhang, Feng; Niu, Yingxi; Yang, Fei; Liu, Xingfang; Wang, Lei; Zhao, Wanshun; Sun, Guosheng; Zeng, Yiping

    2015-01-01

    Highlights: • 3C-SiC thin films of preferential orientation along with Si(111) substrates were obtained using home-made horizontal LPCVD with different H_2 flow rate ranging from15 to 30 slm. • High H_2 flow rate will inhibit the out-diffusion of silicon atoms from silicon substrates effectively. Transformation and the mechanism of void formation are discussed based on our model. • The variation of growth rate and n-type doping with increasing H_2 flow rate is researched and the influencing mechanism is discussed. - Abstract: 3C-SiC thin films were grown on Si(111) substrates at 1250 °C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H_2 flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase obviously with increasing H_2 flow rate. The growth rate and n-type doping are also dependent on H_2 flow rate. The properties of the voids at the interface are discussed based on the cross-sectional scanning electron microscope characterization. Transformation of voids with increasing H_2 flow rate are attributed to higher 3C-SiC film growth rate and H_2 etching rate. The mechanism of void formation is discussed based on our model, too. The results demonstrate that H_2 flow rate plays a very important role in the heteroepitaxial growth of 3C-SiC films.

  19. Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

    International Nuclear Information System (INIS)

    Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2008-01-01

    The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

  20. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Guoguo [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Feng, E-mail: fzhang@semi.ac.cn [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Niu, Yingxi; Yang, Fei [Electrical Engineering New Materials and Microelectronics Department, State Grid Smart Grid Research Institute, Beijing 100192 (China); Liu, Xingfang; Wang, Lei; Zhao, Wanshun [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Guosheng [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Dongguan Tianyu Semiconductor, Inc., Dongguan 523000 (China); Zeng, Yiping [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-10-30

    Highlights: • 3C-SiC thin films of preferential orientation along with Si(111) substrates were obtained using home-made horizontal LPCVD with different H{sub 2} flow rate ranging from15 to 30 slm. • High H{sub 2} flow rate will inhibit the out-diffusion of silicon atoms from silicon substrates effectively. Transformation and the mechanism of void formation are discussed based on our model. • The variation of growth rate and n-type doping with increasing H{sub 2} flow rate is researched and the influencing mechanism is discussed. - Abstract: 3C-SiC thin films were grown on Si(111) substrates at 1250 °C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H{sub 2} flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase obviously with increasing H{sub 2} flow rate. The growth rate and n-type doping are also dependent on H{sub 2} flow rate. The properties of the voids at the interface are discussed based on the cross-sectional scanning electron microscope characterization. Transformation of voids with increasing H{sub 2} flow rate are attributed to higher 3C-SiC film growth rate and H{sub 2} etching rate. The mechanism of void formation is discussed based on our model, too. The results demonstrate that H{sub 2} flow rate plays a very important role in the heteroepitaxial growth of 3C-SiC films.

  1. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  2. Dielectric passivation schemes for high efficiency n-type c-si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saynova, D.S.; Romijn, I.G.; Cesar, I.; Lamers, M.W.P.E.; Gutjahr, A. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Dingemans, G. [ASM, Kapeldreef 75, B-3001 Leuven (Belgium); Knoops, H.C.M.; Van de Loo, B.W.H.; Kessels, W.M.M. [Eindhoven University of Technology, Department of Appl. Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Siarheyeva, O.; Granneman, E. [Levitech BV, Versterkerstraat 10, 1322AP Almere (Netherlands); Venema, P.R.; Vlooswijk, A.H.G. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands); Gautero, L.; Borsa, D.M.

    2013-10-15

    We investigate the impact of different dielectric layers and stacks on the passivation properties of boron doped p{sup ++}-emitters and phosphorous doped n{sup +}-BSFs which are relevant for competitive n-type cell conversion efficiencies. The applied passivation schemes are associated with specific properties at c-Si/dielectric interface and functional mechanisms. In this way we aim to gain a deeper understanding of the passivation mechanism of the differently doped fields within the n-type cells and identify options to further improve the efficiency. The deposition technologies in our study comprise industrial PECVD systems and/or ALD both in industrial and lab scale configurations. In case of p{sup ++}-emitters the best results were achieved by combining field effect and chemical passivation using stacks of low temperature wet chemical oxide and thin ALD-AlOx capped with PECVD-SiNx. The corresponding Implied Voc values were of about (673{+-}2) mV and J{sub 0} of (68{+-}2) fA/cm{sup 2}. For the n{sup +}-BSF passivation the passivation scheme based on SiOx with or without additional AlOx film deposited by a lab scale temporal ALD processes and capped with PECVD-SiNx layer yielded a comparable Implied Voc of (673{+-}2) mV, but then corresponding to J{sub 0} value of (80{+-}15) fA/cm{sup 2}. This passivation scheme is mainly based on the chemical passivation and was also suitable for p{sup ++} surface. This means that we have demonstrated that for n-Pasha cells both the emitter and BSF can be passivated with the same type of passivation that should lead to > 20% cell efficiency. This offers the possibility for transfer this passivation scheme to advanced cell architectures, such as IBC.

  3. SiC/SiC composites by preceramic polymer infiltration and pyrolysis

    International Nuclear Information System (INIS)

    Schiroky, G.H.

    1997-01-01

    Lanxide Corporation has been developing fiber-reinforced silicon carbide matrix composites using the technique of preceramic polymer infiltration and pyrolysis, commonly referred to as the PIP-process. In this method, liquid CERASET TM preceramic polymer is being infiltrated into lay-ups of ceramic fibers, thermoset, and pyrolized at elevated temperatures for conversion into a SiC matrix. Several cycles of reinfiltration and pyrolysis must be performed to build up the SiC matrix because of the increase in density during pyrolysis from 1.0 g/cm 3 for the liquid polymer to between 2.2 and 3.2 g/cm 3 for the ceramic matrix. Composites have been fabricated using three different approaches: first, polymer infiltration of free-standing fiber preforms in which the fiber plies are being held together with a C/SiC duplex coating applied by chemical vapor infiltration; second, infiltration of individually coated fiber plies contained in a mold using the resin transfer molding method; and third, infiltration of vacuum-bagged, individually coated fiber plies using the vacuum assisted resin infiltration technique. Very good mechanical properties of Nicalon TM /SiC and Hi-Nicalon TM /SiC composites have been obtained, with four-point flexural strengths exceeding 400 MPa and toughnesses in the 20 to 30 MPa·m 1/2 range. The thermal conductivity of the fabricated composites is low (below 5 W/m·K) and must be improved substantially to meet the requirements for fusion structural applications. The fabricated components are relatively dense and impermeable to nitrogen, however, are readily permeated by helium. Chemical analysis has indicated the presence of a small amount of nitrogen (ca. 1 wt%) in the SiC material after pyrolysis of the CERASET preceramic polymer at 1600degC. (author)

  4. SiC/SiC composites by preceramic polymer infiltration and pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Schiroky, G.H. [Lanxide Corporation, Newark, DE (United States)

    1997-12-31

    Lanxide Corporation has been developing fiber-reinforced silicon carbide matrix composites using the technique of preceramic polymer infiltration and pyrolysis, commonly referred to as the PIP-process. In this method, liquid CERASET{sup TM} preceramic polymer is being infiltrated into lay-ups of ceramic fibers, thermoset, and pyrolized at elevated temperatures for conversion into a SiC matrix. Several cycles of reinfiltration and pyrolysis must be performed to build up the SiC matrix because of the increase in density during pyrolysis from 1.0 g/cm{sup 3} for the liquid polymer to between 2.2 and 3.2 g/cm{sup 3} for the ceramic matrix. Composites have been fabricated using three different approaches: first, polymer infiltration of free-standing fiber preforms in which the fiber plies are being held together with a C/SiC duplex coating applied by chemical vapor infiltration; second, infiltration of individually coated fiber plies contained in a mold using the resin transfer molding method; and third, infiltration of vacuum-bagged, individually coated fiber plies using the vacuum assisted resin infiltration technique. Very good mechanical properties of Nicalon{sup TM}/SiC and Hi-Nicalon{sup TM}/SiC composites have been obtained, with four-point flexural strengths exceeding 400 MPa and toughnesses in the 20 to 30 MPa{center_dot}m{sup 1/2} range. The thermal conductivity of the fabricated composites is low (below 5 W/m{center_dot}K) and must be improved substantially to meet the requirements for fusion structural applications. The fabricated components are relatively dense and impermeable to nitrogen, however, are readily permeated by helium. Chemical analysis has indicated the presence of a small amount of nitrogen (ca. 1 wt%) in the SiC material after pyrolysis of the CERASET preceramic polymer at 1600degC. (author)

  5. Structural and optical properties of SiC-SiO2 nanocomposite thin films

    Science.gov (United States)

    Bozetine, I.; Keffous, A.; Kaci, S.; Menari, H.; Manseri, A.

    2018-03-01

    This study deals with the deposition of thin films of a SiC-SiO2nanocomposite deposited on silicon substrates. The deposition is carried out by a co-sputtering RF magnetron 13.56 MHz, using two targets a polycristallin 6H-SiC and sprigs of SiO2. In order to study the influence of the deposition time on the morphology, the structural and optical properties of the thin films produced, two series of samples were prepared, namely a series A with a 30 min deposition time and a series B of one hour duration. The samples were investigated using different characterization techniques such as Scanning Electron Microscope (SEM), X-ray Diffraction (DRX), Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS) and photoluminescence. The results obtained, reveal an optical gap varies between 1.4 and 2.4 eV depending on the thickness of the film; thus depending on the deposition time. The SIMS profile recorded the presence of oxygen (16O) on the surface, which the signal beneath the silicon signal (28Si) and carbon (12C) signals, which confirms that the oxide (SiO2) is the first material deposited at the interface film - substrate with an a-OSiC structure. The photoluminescence (PL) measurement exhibits two peaks, centred at 390 nm due to the oxide and at 416 nm due probably to the nanocrystals of SiC crystals, note that when the deposition time increases, the intensity of the PL drops drastically, result in agreement with dense and smooth film.

  6. Intelligent MONitoring System for antiviral pharmacotherapy in patients with chronic hepatitis C (SiMON-VC

    Directory of Open Access Journals (Sweden)

    Luis Margusino-Framiñán

    2017-01-01

    Full Text Available Two out of six strategic axes of pharmaceutical care in our hospital are quality and safety of care, and the incorporation of information technologies. Based on this, an information system was developed in the outpatient setting for pharmaceutical care of patients with chronic hepatitis C, SiMON-VC, which would improve the quality and safety of their pharmacotherapy. The objective of this paper is to describe requirements, structure and features of Si- MON-VC. Requirements demanded were that the information system would enter automatically all critical data from electronic clinical records at each of the visits to the Outpatient Pharmacy Unit, allowing the generation of events and alerts, documenting the pharmaceutical care provided, and allowing the use of data for research purposes. In order to meet these requirements, 5 sections were structured for each patient in SiMON-VC: Main Record, Events, Notes, Monitoring Graphs and Tables, and Follow-up. Each section presents a number of tabs with those coded data needed to monitor patients in the outpatient unit. The system automatically generates alerts for assisted prescription validation, efficacy and safety of using antivirals for the treatment of this disease. It features a completely versatile Indicator Control Panel, where temporary monitoring standards and alerts can be set. It allows the generation of reports, and their export to the electronic clinical record. It also allows data to be exported to the usual operating systems, through Big Data and Business Intelligence. Summing up, we can state that SiMON-VC improves the quality of pharmaceutical care provided in the outpatient pharmacy unit to patients with chronic hepatitis C, increasing the safety of antiviral therapy.

  7. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  8. 3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

    Energy Technology Data Exchange (ETDEWEB)

    Wahab, Qamar ul.

    1994-01-01

    Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH[sub 4] discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures [<=] 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH[sub 4] partial pressure (PCH[sub 4]) and stoichiometric composition can only be obtained in a narrow PCH[sub 4] range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T[sub s]=850 degrees C and PCH[sub 4]=0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO[sub 2] layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 [mu]A cm[sup -2], a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor structures were fabricated by thermally grown SiO[sub 2] on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10[sup 11] cm[sup -2] eV[sup -1]. Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V.

  9. 3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

    International Nuclear Information System (INIS)

    Wahab, Qamar ul.

    1994-01-01

    Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH 4 discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures ≤ 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH 4 partial pressure (PCH 4 ) and stoichiometric composition can only be obtained in a narrow PCH 4 range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T s =850 degrees C and PCH 4 =0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO 2 layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 μA cm -2 , a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor (MOS) structures were fabricated by thermally grown SiO 2 on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10 11 cm -2 eV -1 . Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V. 59 refs, figs, tabs

  10. Niimina Ahubiya: Western Mono Song Genres

    OpenAIRE

    Loether, Christopher

    1993-01-01

    Although Native American communities may lose their ancestral language or other aspects of their traditional culture, music seems to be more resistant to the continual onslaught of the dominant Euro-American culture. Even today, traditional music remains a vital part of Native American communities throughout the United States. In this article I examine one aspect of the musical traditions of the Western Mono, specifically the different types of songs, and their functions within Western Mono s...

  11. Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation

    NARCIS (Netherlands)

    Gielis, J.J.H.; Verlaan, V.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.; Terlinden, N.M.

    2009-01-01

    Recently, it was shown that Al2O3 thin films synthesized by (plasmaassisted) atomic layer deposition (ALD) provide excellent surface passivation of n, p and p+ type c-Si as highly relevant for c-Si photovoltaics. It was found that a large negative fixed charge density (up to 1013 cm-2) in the Al2O3

  12. A thermochemical approach to enhance hydrophobicity of SiC/SiO{sub 2} powder using γ-methacryloxypropyl trimethoxy silane and octylphenol polyoxyethylene ether (7)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chunxue; Feng, Dandan; Wang, Xiangke; Li, Zhihong; Zhu, Yumei, E-mail: zhuyumei@tju.edu.cn

    2016-01-01

    Graphical abstract: Through the exploration of modification mechanism, the hydrophilic properties of SiC/SiO{sub 2}-KH570-OP-7 were far superior to SiC/SiO{sub 2}-KH570. - Highlights: • A novel universal method is performed to enhance hydrophobicity of SiC/SiO{sub 2} powder. • Through pyrolysis of KH570 and OP-7, hydrophilic groups is grafted. • The hydrophobicity of SiC/SiO{sub 2}-KH570-OP-7 was far superior to SiC/SiO{sub 2}-KH570. • A possible formation mechanism of hydrophilic surface was proposed. • Surface changes on SiC/SiO{sub 2}-KH570-OP-7 powder were analyzed via SEM, FTIR, XPS. - Abstract: A thermochemical synthetic methodology for silicon carbide/silica (SiC/SiO{sub 2}) powder modified by integrating γ-methacryloxypropyl trimethoxy silane (KH570) and octylphenol polyoxyethylene ether (7) (OP-7) with hydrophilic SiC/SiO{sub 2} particles is described. On account of weak hydrophobicity of SiC/SiO{sub 2} powder modified by KH570 (SiC/SiO{sub 2}-KH570), the study focuses on the improvement of hydrophobicity utilizing alkylation reaction between OP-7 and KH570 at high temperature. Compared with using KH570 alone, SiC/SiO{sub 2} powder modified by KH570 and OP-7 (SiC/SiO{sub 2}-KH570-OP-7) shows better water resistance, and also an increased contact angle from 73.8° to 136.4°, resulting thus an improved hydrophobicity. Fourier transform infrared spectroscopy (FTIR), as well as X-ray photoelectron spectroscopy (XPS), was utilized to characterize these surfaces, and the results indicated that KH570 and OP-7 can be covalently bonded on the surface of SiC/SiO{sub 2} powder. Furthermore, it has been deeply investigated in the paper not only the possible modes of non-oxidative thermal degradation of OP-7 and KH570, but also the formation mechanism of more hydrophobic SiC/SiO{sub 2}-KH570-OP-7 powder, which probably will have a potential utility for other inorganic materials.

  13. Mono Lake sediments preserve a record of recent environmental change

    Science.gov (United States)

    Meixnerova, J.; Betts, M.; Westacott, S.; Ingalls, M.; Miller, L. G.; Sessions, A. L.; Trower, L.; Geobiology Course, A.

    2017-12-01

    Modern Mono Lake is a geochemically unique closed-basin, hypersaline soda lake. Since 1941, anthropogenic water diversions have decreased the lake's volume and water level, driving changes in water chemistry and ecology. Mono Lake sediments offer an opportunity to investigate the nature and extent of these changes. We analyzed a 70 cm sediment core from the center of Mono Lake recording the past 116 years of deposition. At the time of recovery, the entire core was dark green. 16S rRNA gene analysis indicated a sedimentary bacterial community dominated by Cyanobacteria. SEM imaging revealed abundant, well-preserved diatom frustules below 10 cm core depth, in contrast they are nearly absent above 10 cm depth. Fatty acid (FAME) biomarkers for diatoms and algal sterols were present throughout the core in varying concentrations. Phytol was exceptionally abundant in the core; ratios of phytol/C-18 FAME were commonly >200. The δ13Corg ranged between -17.5 and -20‰ in the lower 52 cm of the core while the upper part shows significant decrease of δ13Corg to -28‰. We interpret the shift in δ13Corg as an ecological transition from mainly diatoms in the lower core towards the green alga Picocystis, which is the main primary producer today and has a δ13Corg value of -32.5‰. The onset of this change dates back 23 years, which roughly coincides with the highest reported salinity, 88 g/L in 1995. We hypothesize that diatoms gradually became marginalized as a result of hypersaline conditions. We also observed a variety of trends that may be characterized as unique fingerprints of Mono Lake. The unusually high abundance of phytol was consistent with the core's pervasive green coloring and could potentially indicate a higher preservation potential of phytol under alkaline conditions. Throughout the core, δ15Norg fluctuated between +10 and +13‰. Such atypical enrichment in δ15Norg could be explained by NH4 dissociation and subsequent NH3 volatilization under high p

  14. Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; de Arellano-Lopez, A. R.; Martinez-Fernandez, J.; Varela-Feria, F. M.

    2006-12-01

    The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5 300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ˜30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.

  15. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    International Nuclear Information System (INIS)

    Šály, V; Pern, M; Janíček, F; Mikolášek, M; Packa, J; Huran, J

    2017-01-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements. (paper)

  16. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    Science.gov (United States)

    Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

    2017-04-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

  17. Effect of simultaneous ion irradiation on microstructural change of SiC/SiC composites at high temperature

    International Nuclear Information System (INIS)

    Taguchi, T.; Wakai, E.; Igawa, N.; Nogami, S.; Snead, L.L.; Hasegawa, A.; Jitsukawa, S.

    2002-01-01

    The effect of simultaneous triple ion irradiation of He, H and Si on microstructural evolution of two kinds of SiC/SiC composites (HNS composite (using Hi-Nicalon type S SiC fiber) and TSA composite (using Tyranno SA SiC fiber)) at 1000 deg. C has been investigated. The microstructure observations of SiC/SiC composites irradiated to 10 dpa were examined by transmission electron microscopy. He bubbles were hardly formed in matrix of TSA composite, but many helium bubbles and some cracks were observed at grain boundaries of matrix of HNS composite. He bubbles and cracks were not, on the other hand, observed in the both fiber fabrics of HNS and TSA composites. Debonding between fiber and carbon layer following irradiation region was not observed in the both composites. Under these irradiation conditions, TSA composite showed the better microstructural stability against ion beams irradiation than one of HNS composite

  18. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  19. Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Peizhi; Li, Guoliang; Duscher, Gerd, E-mail: gduscher@utk.edu [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996 (United States); Sharma, Yogesh K.; Ahyi, Ayayi C.; Isaacs-Smith, Tamara; Williams, John R.; Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-01

    The SiC/SiO{sub 2} interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO{sub 2} interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.

  20. Study of the irradiation defects in 3C-SiC

    International Nuclear Information System (INIS)

    Lefevre, J.

    2007-01-01

    This work deals with the study of the irradiation defects in the cubic polytype 3C of the n type silicon carbide. Low temperature photoluminescence and electron spin resonance techniques have been used. In situ photoluminescence measurements after irradiation at 10 K by electrons have shown that the nature of the defects induced is identical to those observed after irradiation at ambient temperature with electrons, protons or carbon ions. No regeneration of these defects has been revealed after in situ annealings until 300 K. The electrons Van de Graff accelerator of the Irradiated Solid Laboratory has allowed to irradiate sample of 3C in a range of energies between 190 keV and 1 MeV. It has then been possible to estimate the appearance threshold of the irradiation defects but especially to be able to determine the displacement threshold energy of silicon in this SiC polytype. The found value of 25 eV is in good agreement with the first experimental result proposed by X. Kerbiriou with the use of the ESR. Annealings in the range of high temperatures have been carried out. The evolution of the irradiation defects has been followed in photoluminescence and in ESR. The results show that, in one part, the vacancy of the silicon negatively charged is essentially the only compensating defect in 3C-SiC of n type and that, in another part, the majority of the defects are annealed below 1200 C. Only the D1 defect remains after annealings until 1600 C. The D1 center is in fact a native defect in SiC; indeed, it has been identified alone in non irradiated samples. A systematic study of these last samples show the absence of D1 in samples strongly compensated. The compared results of photoluminescence and of positons annihilation are in good agreement for the possible attribution of D1 to the bi-vacancy V C -V Si . One of the most interesting result of this last work has been obtained using the ESR technique under excitation with a neodymium laser. The measurements, carried

  1. Theoretical study of helium insertion and diffusion in 3C-SiC

    International Nuclear Information System (INIS)

    Van Ginhoven, Renee M.; Chartier, Alain; Meis, Constantin; Weber, William J.; Rene Corrales, L.

    2006-01-01

    Insertion and diffusion of helium in cubic silicon carbide have been investigated by means of density functional theory. The method was assessed by calculating relevant properties for the perfect crystal along with point defect formation energies. Results are consistent with available theoretical and experimental data. Helium insertion energies were calculated to be lower for divacancy and silicon vacancy defects compared to the other mono-vacancies and interstitial sites considered. Migration barriers for helium were determined by using the nudged elastic band method. Calculated activation energies for migration in and around vacancies (silicon vacancy, carbon vacancy or divacancy) range from 0.6 to 1.0 eV. Activation energy for interstitial migration is calculated to be 2.5 eV. Those values are discussed and related to recent experimental activation energies for migration that range from 1.1 [P. Jung, J. Nucl. Mater. 191-194 (1992) 377] to 3.2 eV [E. Oliviero, A. van Veen, A.V. Fedorov, M.F. Beaufort, J.F. Bardot, Nucl. Instrum. Methods Phys. Res. B 186 (2002) 223; E. Oliviero, M.F. Beaufort, J.F. Bardot, A. van Veen, A.V. Fedorov, J. Appl. Phys. 93 (2003) 231], depending on the SiC samples used and on helium implantation conditions

  2. Hierarchical 3C-SiC nanowires as stable photocatalyst for organic dye degradation under visible light irradiation

    International Nuclear Information System (INIS)

    Zhang, Judong; Chen, Jianjun; Xin, Lipeng; Wang, Mingming

    2014-01-01

    Graphical abstract: The photocatalytic performance was enhanced by hierarchical nanostructural SiC nanowires due to the increased specific surface areas and efficient incident light scattering. The positive effect of SiO 2 layer growth on the surface of nanowires during the catalytic process on the high decolorization efficiency of SiC nanowires was attributed to SiO 2 surface oxygen vacancies. -- Highlights: • High decolorization rate of methylene blue using hierarchical 3C-SiC nanowires was obtained. • The effect of methylene blue with different concentration to catalytic result was investigated. • The photocatalytic reaction mechanism of degrading methylene blue was explained. • The SiO 2 layer generating on nanowire surface in the catalytic process was analyzed. -- Abstract: 3C-SiC nanowires with hierarchical structure were synthesized by sol–gel carbothermal reduction method. The photocatalytic property of SiC nanowires was investigated. 3C-SiC hierarchical nanowires exhibited an enhanced photocatalytic activity by accelerating the photocatalytic degradation of methylene blue solution under visible light irradiation. Methylene blue was degraded efficiently after 5 h irradiation over the photocatalyst. The photocatalytic activity was affected by the initial concentration of the methylene blue solution. Silicon dioxide layer was observed on the surface of nanowires after the catalytic process. The positive effect of SiO 2 surface oxygen vacancies and 3C-SiC hierarchical nanostructures on the high decolorization efficiency of SiC nanowires was discussed. The detailed photocatalytic redox processes were also explained

  3. Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: Recent Advances and Future Directions

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation briefly reviews the SiC/SiC major environmental and environment-fatigue degradations encountered in simulated turbine combustion environments, and thus NASA environmental barrier coating system evolution for protecting the SiC/SiC Ceramic Matrix Composites for meeting the engine performance requirements. The presentation will review several generations of NASA EBC materials systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. This paper will also focus on the performance requirements and design considerations of environmental barrier coatings for next generation turbine engine applications. The current development emphasis is placed on advanced NASA candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be briefly discussed.

  4. MICROSTRUCTURAL AND MECHANICAL CHARACTERIZATION OF 2-D AND 3-D SiC/SiNC CERAMIC MATRIX COMPOSITES

    Science.gov (United States)

    2018-02-23

    any other person or corporation; or convey any rights or permission to manufacture, use, or sell any patented invention that may relate to them...AFRL/RXCC 5d. PROJECT NUMBER 4347 5e. TASK NUMBER 5f. WORK UNIT NUMBER X0S7 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) AFRL/RXCC...0.145-inch material.. 15. SUBJECT TERMS Ceramic-matrix composites, SiC/SiNC, tensile, interlaminar shear, creep, stress rupture, elevated

  5. Optimal determination of the elastic constants of woven 2D SiC/SiC composite materials

    International Nuclear Information System (INIS)

    Mouchtachi, A; Guerjouma, R El; Baboux, J C; Rouby, D; Bouami, D

    2004-01-01

    For homogeneous materials, the ultrasonic immersion method, associated with a numerical optimization process mostly based on Newton's algorithm, allows the determination of elastic constants for various synthetic and natural composite materials. Nevertheless, a principal limitation of the existing optimization procedure occurs when the considered material is at the limit of the homogeneous hypothesis. Such is the case of the woven bidirectional SiC matrix and SiC fibre composite material. In this study, we have developed two numerical methods for the determination of the elastic constants of the 2D SiC/SiC composite material (2D SiC/SiC). The first one is based on Newton's algorithm: the elastic constants are obtained by minimizing the square deviation between experimental and calculated velocities. The second method is based on the Levenberg-Marquardt algorithm. We show that these algorithms give the same results in the case of homogeneous anisotropic composite materials. For the 2D SiC/SiC composite material, the two methods, using the same measured velocities, give different sets of elastic constants. We then note that the Levenberg-Marquardt algorithm enables a better convergence towards a global set of elastic constants in good agreement with the elastic properties, which can be measured using classical quasi-static methods

  6. Ablation behavior and mechanism of 3D Cf/ZrC-SiC composites in a plasma wind tunnel environment

    Directory of Open Access Journals (Sweden)

    Qinggang Li

    2015-12-01

    Full Text Available Three-dimensional needle-like Cf/ZrC-SiC composites were successfully fabricated by polymer infiltration and pyrolysis combined with ZrC precursor impregnation. The ablation properties of the composites were tested in a plasma wind tunnel environment at different temperatures and different times. The microstructure and morphology of the composites were examined after ablation by scanning electron microscopy, and their composition was confirmed by energy dispersive spectroscopy. The composites exhibited good configurational stability with a surface temperature of greater than 2273 K over a 300–1000 s period. The formation of ZrSiO4 and SiO2 melts on the surface of the 3D Cf/ZrC-SiC composites contributed significantly to improvement in their ablation properties. However, these composites exhibited serious ablation when the temperature was increased to 2800 K. The 3D Cf/ZrC-SiC composites obtained after ablation showed three different layers attributed to the temperature and pressure gradients: the ablation central region, the ablation transition region, and the unablation region.

  7. Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

    2009-10-15

    Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

  8. Effect of impact energy on damage resistance and mechanical property of C/SiC composites under low velocity impact

    Energy Technology Data Exchange (ETDEWEB)

    Mei, Hui, E-mail: phdhuimei@yahoo.com; Yu, Changkui; Xu, Yawei; Han, Daoyang; Cheng, Laifei

    2017-02-27

    The present study investigated the damage resistance of two dimensional carbon fiber reinforced silicon carbide (C/SiCs) composites subjected to low velocity impact (LVI). Damage microstructures of specimens under different impact energies (E{sub i}) were characterized by infrared thermography, X-ray computed tomography and scanning electron microscopy. The real damage radii of specimens were found to change slightly with E{sub i}, whereas apparent damage radii where much larger. Overall, the fabricated 2D C/SiC composites exhibited good damage resistance to LVI with nominal post-impact tensile strengths remaining at 89.4%, 83.35%, 76.97%, and 74.84% of their pre-impacted counterpart of 158 MPa, for impact energies of 3, 4, 5, and 6 J, respectively. Compared with the as-received one, after LVI real tensile strengths of the C/SiC composite specimens increased by 5.84% for the E{sub i} of 3 J, 9.27% for 4 J, −1.83% for 5 J, −3.16% for 6 J.

  9. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  10. Combined Thermomechanical and Environmental Durability of Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna

    2016-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in next generation turbine engines for hot-section component applications. The development of prime-reliant environmental barrier coatings is essential to the EBC-CMC system durability, ensuring the successful implementations of the high temperature and lightweight engine component technologies for engine applications.This paper will emphasize recent NASA environmental barrier coating and CMC developments for SiC/SiC turbine airfoil components, utilizing advanced coating compositions and processing methods. The emphasis has been particularly placed on thermomechanical and environment durability evaluations of EBC-CMC systems. We have also addressed the integration of the EBCs with advanced SiC/SiC CMCs, and studied the effects of combustion environments and Calcium-Magnesium-Alumino-Silicate (CMAS) deposits on the durability of the EBC-CMC systems under thermal gradient and mechanical loading conditions. Advanced environmental barrier coating systems, including multicomponent rare earth silicate EBCs and HfO2-Si based bond coats, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  11. Influence of helium atoms on the shear behavior of the fiber/matrix interphase of SiC/SiC composite

    Science.gov (United States)

    Jin, Enze; Du, Shiyu; Li, Mian; Liu, Chen; He, Shihong; He, Jian; He, Heming

    2016-10-01

    Silicon carbide has many attractive properties and the SiC/SiC composite has been considered as a promising candidate for nuclear structural materials. Up to now, a computational investigation on the properties of SiC/SiC composite varying in the presence of nuclear fission products is still missing. In this work, the influence of He atoms on the shear behavior of the SiC/SiC interphase is investigated via Molecular Dynamics simulation following our recent paper. Calculations are carried out on three dimensional models of graphite-like PyC/SiC interphase and amorphous PyC/SiC interphase with He atoms in different regions (the SiC region, the interface region and the PyC region). In the graphite-like PyC/SiC interphase, He atoms in the SiC region have little influence on the shear strength of the material, while both the shear strength and friction strength may be enhanced when they are in the PyC region. Low concentration of He atoms in the interface region of the graphite-like PyC/SiC interphase increases the shear strength, while there is a reduction of shear strength when the He concentration is high due to the switch of sliding plane. In the amorphous PyC/SiC interphase, He atoms can cause the reduction of the shear strength regardless of the regions that He atoms are located. The presence of He atoms may significantly alter the structure of SiC/SiC in the interface region. The influence of He atoms in the interface region is the most significant, leading to evident shear strength reduction of the amorphous PyC/SiC interphase with increasing He concentration. The behaviors of the interphases at different temperatures are studied as well. The dependence of the shear strengths of the two types of interphases on temperatures is studied as well. For the graphite-like PyC/SiC interphase, it is found strongly related to the regions He atoms are located. Combining these results with our previous study on pure SiC/SiC system, we expect this work may provide new insight

  12. Influence of helium atoms on the shear behavior of the fiber/matrix interphase of SiC/SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Enze [State Nuclear Power Research Institute, Beijing, 100029 (China); Du, Shiyu, E-mail: dushiyu@nimte.ac.cn [Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China); Li, Mian [Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China); Liu, Chen [Beijing Research Institute of Chemical Engineering and Metallurgy (China); He, Shihong [State Nuclear Power Research Institute, Beijing, 100029 (China); Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China); He, Jian [Center for Translational Medicine, Department of Biotechnology, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023 (China); He, Heming, E-mail: heheming@snptc.com.cn [State Nuclear Power Research Institute, Beijing, 100029 (China)

    2016-10-15

    Silicon carbide has many attractive properties and the SiC/SiC composite has been considered as a promising candidate for nuclear structural materials. Up to now, a computational investigation on the properties of SiC/SiC composite varying in the presence of nuclear fission products is still missing. In this work, the influence of He atoms on the shear behavior of the SiC/SiC interphase is investigated via Molecular Dynamics simulation following our recent paper. Calculations are carried out on three dimensional models of graphite-like PyC/SiC interphase and amorphous PyC/SiC interphase with He atoms in different regions (the SiC region, the interface region and the PyC region). In the graphite-like PyC/SiC interphase, He atoms in the SiC region have little influence on the shear strength of the material, while both the shear strength and friction strength may be enhanced when they are in the PyC region. Low concentration of He atoms in the interface region of the graphite-like PyC/SiC interphase increases the shear strength, while there is a reduction of shear strength when the He concentration is high due to the switch of sliding plane. In the amorphous PyC/SiC interphase, He atoms can cause the reduction of the shear strength regardless of the regions that He atoms are located. The presence of He atoms may significantly alter the structure of SiC/SiC in the interface region. The influence of He atoms in the interface region is the most significant, leading to evident shear strength reduction of the amorphous PyC/SiC interphase with increasing He concentration. The behaviors of the interphases at different temperatures are studied as well. The dependence of the shear strengths of the two types of interphases on temperatures is studied as well. For the graphite-like PyC/SiC interphase, it is found strongly related to the regions He atoms are located. Combining these results with our previous study on pure SiC/SiC system, we expect this work may provide new insight

  13. Influence of helium atoms on the shear behavior of the fiber/matrix interphase of SiC/SiC composite

    International Nuclear Information System (INIS)

    Jin, Enze; Du, Shiyu; Li, Mian; Liu, Chen; He, Shihong; He, Jian; He, Heming

    2016-01-01

    Silicon carbide has many attractive properties and the SiC/SiC composite has been considered as a promising candidate for nuclear structural materials. Up to now, a computational investigation on the properties of SiC/SiC composite varying in the presence of nuclear fission products is still missing. In this work, the influence of He atoms on the shear behavior of the SiC/SiC interphase is investigated via Molecular Dynamics simulation following our recent paper. Calculations are carried out on three dimensional models of graphite-like PyC/SiC interphase and amorphous PyC/SiC interphase with He atoms in different regions (the SiC region, the interface region and the PyC region). In the graphite-like PyC/SiC interphase, He atoms in the SiC region have little influence on the shear strength of the material, while both the shear strength and friction strength may be enhanced when they are in the PyC region. Low concentration of He atoms in the interface region of the graphite-like PyC/SiC interphase increases the shear strength, while there is a reduction of shear strength when the He concentration is high due to the switch of sliding plane. In the amorphous PyC/SiC interphase, He atoms can cause the reduction of the shear strength regardless of the regions that He atoms are located. The presence of He atoms may significantly alter the structure of SiC/SiC in the interface region. The influence of He atoms in the interface region is the most significant, leading to evident shear strength reduction of the amorphous PyC/SiC interphase with increasing He concentration. The behaviors of the interphases at different temperatures are studied as well. The dependence of the shear strengths of the two types of interphases on temperatures is studied as well. For the graphite-like PyC/SiC interphase, it is found strongly related to the regions He atoms are located. Combining these results with our previous study on pure SiC/SiC system, we expect this work may provide new insight

  14. Effects of Heat Treatment on SiC-SiC Ceramic Matrix Composites

    Science.gov (United States)

    Knauf, Michael W.

    Residual stresses resulting from the manufacturing process found within a silicon carbide/silicon carbide (SiC/SiC) ceramic matrix composite were thoroughly investigated through the use of high-energy X-ray diffraction and Raman microspectroscopy. The material system studied was a Rolls-Royce composite produced with Hi-Nicalon fibers woven into a five harness satin weave, coated with boron nitride and silicon carbide interphases, and subsequently infiltrated with silicon carbide particles and a silicon matrix. Constituent stress states were measured before, during, and after heat treatments ranging from 900 °C to 1300 °C for varying times between one and sixty minutes. Stress determination methods developed through these analyses can be utilized in the development of ceramic matrix composites and other materials employing boron-doped silicon. X-ray diffraction experiments were performed at the Argonne National Laboratory Advanced Photon Source to investigate the evolution of constituent stresses through heat treatment, and determine how stress states are affected at high temperature through in situ measurements during heat treatments up to 1250 °C for 30 minutes. Silicon carbide particles in the as-received condition exhibited a nearly isotropic stress state with average tensile stresses of approximately 300 MPa. The silicon matrix exhibited a complimentary average compressive stress of approximately 300 MPa. Strong X-ray diffraction evidence is presented demonstrating solid state boron diffusion and increased boron solubility found in silicon throughout heat treatment. While the constituent stress states did evolve through the heat treatment cycles, including approaching nearly stress-free conditions at temperatures close to the manufacturing temperature, no permanent relaxation of stress was observed. Raman spectroscopy was utilized to investigate stresses found within silicon carbide particles embedded within the matrix and the silicon matrix as an alternate

  15. Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang; Liu, Wenbo; Li, Tao; He, Chaohui; Yun, Di; Jiang, Weilin; Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J.; Wang, Zhiguang

    2017-02-27

    Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to 1017 and 41016 cm-2, respectively. The Kr15+ ions penetrated the entire depth of the He2+ ion implantation region. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted 3C-SiC were created through masked overlapping irradiations. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ ion only implanted 3C-SiC, helium cavities in the He2+ and Kr15+ co-implanted 3C-SiC had a smaller size but higher density. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promoted cavity growth; much smaller voids were formed in the Kr15+ ion only irradiated 3C-SiC at the same dose. In addition, local Kr migration and trapping at cavities occurred, but long-range Kr diffusion in 3C-SiC was not observed up to 1600°C.

  16. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  17. Seasonality of cavitation and frost fatigue in Acer mono Maxim.

    Science.gov (United States)

    Zhang, Wen; Feng, Feng; Tyree, Melvin T

    2017-12-08

    Although cavitation is common in plants, it is unknown whether the cavitation resistance of xylem is seasonally constant or variable. We tested the changes in cavitation resistance of Acer mono before and after a controlled cavitation-refilling and freeze-thaw cycles for a whole year. Cavitation resistance was determined from 'vulnerability curves' showing the percent loss of conductivity versus xylem tension. Cavitation fatigue was defined as a reduction of cavitation resistance following a cavitation-refilling cycle, whereas frost fatigue was caused by a freeze-thaw cycle. A. mono developed seasonal changes in native embolisms; values were relatively high during winter but relatively low and constant throughout the growing season. Cavitation fatigue occurred and changed seasonally during the 12-month cycle; the greatest fatigue response occurred during summer and the weakest during winter, and the transitions occurred during spring and autumn. A. mono was highly resistant to frost damage during the relatively mild winter months; however, a quite different situation occurred during the growing season, as the seasonal trend of frost fatigue was strikingly similar to that of cavitation fatigue. Seasonality changes in cavitation resistance may be caused by seasonal changes in the mechanical properties of the pit membranes. © 2017 John Wiley & Sons Ltd.

  18. Effect of different parameters on machining of SiC/SiC composites via pico-second laser

    Energy Technology Data Exchange (ETDEWEB)

    Li, Weinan; Zhang, Ruoheng [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, Shaanxi 10068 (China); Liu, Yongsheng, E-mail: yongshengliu@nwpu.edu.cn [Science and technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072 (China); Wang, Chunhui; Wang, Jing [Science and technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072 (China); Yang, Xiaojun [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, Shaanxi 10068 (China); Cheng, Laifei [Science and technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072 (China)

    2016-02-28

    Graphical abstract: - Highlights: • The highlights of the manuscript include the following two aspects. • First, we found that the different machining modes (helical line scanning and single ring line scanning) and processing power of machining have remarkable effect on the surface morphology of the machined area, such as the shape, depth and the formation of different surface structures. • Secondly, we investigated that the debris consisted of C, Si and O was observed on the machined surface. • Some of the Si–C bonds of the SiC matrix and fibers would be transformed into Si–O bonds after machined, depending on the processing power. - Abstract: Pico-second laser plays an important role in modern machining technology, especially in machining high hardness materials. In this article, pico-second laser was utilized for irradiation on SiC/SiC composites, and effects of different processing parameters including the machining modes and laser power were discussed in detail. The results indicated that the machining modes and laser power had great effect on machining of SiC/SiC composites. Different types of surface morphology and structure were observed under helical line scanning and single ring line scanning, and the analysis of their formulation was discussed in detail. It was believed that the machining modes would be responsible to the different shapes of machining results at the same parameters. The processing power shall also influence the surface morphology and quality of machining results. In micro-hole drilling process, large amount of debris and fragments were observed within the micro-holes, and XPS analysis showed that there existed Si–O bonds and Si–C bonds, indicating that the oxidation during processing was incomplete. Other surface morphology, such as pores and pits were discussed as well.

  19. Thermo-mechanical assessment of full SiC/SiC composite cladding for LWR applications with sensitivity analysis

    Science.gov (United States)

    Singh, Gyanender; Terrani, Kurt; Katoh, Yutai

    2018-02-01

    SiC/SiC composites are considered among leading candidates for accident tolerant fuel cladding in light water reactors. However, when SiC-based materials are exposed to neutron irradiation, they experience significant changes in dimensions and physical properties. Under a large heat flux application (i.e. fuel cladding), the non-uniform changes in the dimensions and physical properties will lead to build-up of stresses in the structure over the course of time. To ensure reliable and safe operation of such a structure it is important to assess its thermo-mechanical performance under in-reactor conditions of irradiation and elevated temperature. In this work, the foundation for 3D thermo-mechanical analysis of SiC/SiC cladding is put in place and a set of analyses with simplified boundary conditions has been performed. The analyses were carried out with two different codes that were benchmarked against one another and prior results in the literature. A constitutive model is constructed and solved numerically to predict the stress distribution and variation in the cladding under normal operating conditions. The dependence of dimensions and physical properties variation with irradiation and temperature has been incorporated. These robust models may now be modified to take into account the axial and circumferential variation in neutron and heat flux to fully account for 3D effects. The results from the simple analyses show the development of high tensile stresses especially in the circumferential and axial directions at the inner region of the cladding. Based on the results obtained, design guidelines are recommended. For lack of certainty in or tailor-ability for the physical and mechanical properties of SiC/SiC composite material a sensitivity analysis is conducted. The analysis results establish a precedence order of the properties based on the extent to which these properties influence the temperature and the stresses.

  20. Effects of Preform Density on Structure and Property of C/C-SiC Composites Fabricated by Gaseous Silicon Infiltration

    Directory of Open Access Journals (Sweden)

    CAO Yu

    2016-07-01

    Full Text Available The 3-D needled C/C preforms with different densities deposited by chemical vapor infiltration (CVI method were used to fabricate C/C-SiC composites by gaseous silicon infiltration (GSI. The porosity and CVI C thickness of the preforms were studied, and the effects of preform density on the mechanical and thermal properties of C/C-SiC composites were analyzed. The results show that with the increase of preform density, the preform porosity decreases and the CVI C thickness increases from several hundred nanometers to several microns. For the C/C-SiC composites, as the preform density increases, the residual C content increases while the density and residual Si content decreases. The SiC content first keeps at a high level of about 40% (volume fraction, which then quickly reduces. Meanwhile, the mechanical properties increase to the highest values when the preform density is 1.085g/cm3, with the flexure strength up to 308.31MP and fracture toughness up to 11.36MPa·m1/2, which then decrease as the preform density further increases. The thermal conductivity and CTE of the composites, however, decrease with the increase of preform density. It is found that when the preform porosity is too high, sufficient infiltration channels lead to more residual Si, and thinner CVI C thickness results in the severe corrosion of the reinforcing fibers by Si and lower mechanical properties. When the preform porosity is relatively low, the contents of Si and SiC quickly reduce since the infiltration channels are rapidly blocked, resulting in the formation of large closed pores and not high mechanical properties.

  1. SAW propagation characteristics of TeO3/3C-SiC/LiNbO3 layered structure

    Science.gov (United States)

    Soni, Namrata D.

    2018-04-01

    Surface acoustic wave (SAW) devices based on Lithium Niobate (LiNbO3) single crystal are advantageous because of its high SAW phase velocity, electromechanical coupling coefficient and cost effectiveness. In the present work a new multi-layered TeO3/3C-SiC/128° Y-X LiNbO3 SAW device has been proposed. SAW propagation properties such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of the TeO3/SiC/128° Y-X LiNbO3 multi layered structure is examined using theoretical calculations. It is found that the integration of 0.09λ thick 3C-SiC over layer on 128° Y-X LiNbO3 increases its electromechanical coupling coefficient from 5.3% to 9.77% and SAW velocity from 3800 ms‑1 to 4394 ms‑1. The SiC/128° Y-X LiNbO3 bilayer SAW structure exhibits a high positive TCD value. A temperature stable layered SAW device could be obtained with introduction of 0.007λ TeO3 over layer on SiC/128° Y-X LiNbO3 bilayer structure without sacrificing the efficiency of the device. The proposed TeO3/3C-SiC/128° Y-X LiNbO3 multi-layered SAW structure is found to be cost effective, efficient, temperature stable and suitable for high frequency application in harsh environment.

  2. The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Deyzel, G.; Minnaar, E.G.; Goosen, W.E. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Fuel Performance and Design Department, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2014-04-15

    3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

  3. The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Deyzel, G.; Minnaar, E.G.; Goosen, W.E.; Rooyen, I.J. van

    2014-01-01

    3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

  4. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  5. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  6. Interface strength of SiC/SiC composites with and without helium implantation using micro-indentation test

    International Nuclear Information System (INIS)

    Saito, M.; Ohtsuka, S.

    1998-01-01

    Helium implantation effects on interface strength of SiC/SiC composite were studied using the micro-indentation fiber push-out method. Helium implantation was carried out with an accelerator at about 400 K. Total amount of implanted helium was approximately 10000 appm. Increase of the fiber push-in load was observed in as-implanted specimen. After post-implantation-annealing at 1673 K for 1 h, the change of the fiber push-in load by helium implantation was not observed. Effects of helium implantation on the interface are discussed. (orig.)

  7. Effect of initial porosity on mechanical properties of C/SiC composites fabricated by silicon melt infiltration process

    Energy Technology Data Exchange (ETDEWEB)

    Bae, D.S.; Son, D.Y. [Dept. of Materials and Metallurgical Eng., Dong-Eui Univ., Busan (Korea); Lee, S.P. [Dept. of Mechanical Eng., Dong-Eui Univ., Busan (Korea); Park, H.S.; Kim, K.S. [Dreaming and Challenging Co., Changwon (Korea); Jeon, J.H. [Korea Inst. of Machinery and Materials, Changwon (Korea)

    2004-07-01

    Four kinds of raw C/C composites with a density between 1.25{proportional_to}1.66 g/cm{sup 3} were used in order to investigate the effect of the initial porosity of C/C composites on mechanical properties of liquid silicon infiltrated C/SiC composites. The microstructure observation, image analysis and flexural strength test of the composites were performed. The density and microstructural changes with the variation of the initial porosity was discussed in the terms of the infiltration behavior of liquid silicon and the reaction between liquid silicon and matrix carbon. (orig.)

  8. Thermal Conductivity and Thermal Gradient Cyclic Behavior of Refractory Silicate Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Lee, Kang N.; Miller, Robert A.

    2001-01-01

    Plasma-sprayed mullite and BSAS coatings have been developed to protect SiC/SiC ceramic matrix composites from high temperature environmental attack. In this study, thermal conductivity and thermal barrier functions of these coating systems are evaluated using a laser high-heat-flux test rig. The effects of water vapor on coating thermal conductivity and durability are studied by using alternating furnace and laser thermal gradient cyclic tests. The influence of laser high thermal-gradient cycling on coating failure modes is also investigated.

  9. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  10. Tubes, Mono Jets, Squeeze Out and CME

    Energy Technology Data Exchange (ETDEWEB)

    Longacre, R. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2017-10-23

    Glasma Flux Tubes, Mono Jets with squeeze out flow around them plus the Chiral Magnetic Effect(CME) are physical phenomenon that generate two particle correlation with respect to the reaction plane in mid-central 20% to 30% Au-Au collision √sNN = 200.0 GeV measured at RHIC.

  11. Theoretical investigation of structure and stability of molecules and ions HAO2, HAS2, HSAO and HOAS with 16 valent electrons (A = B, Al, C+, Si+)

    International Nuclear Information System (INIS)

    Zyubina, T.S.; Charkin, O.P.

    1991-01-01

    Using several basic sets and taking into consideration electron correlation in the framework of MP3 approximation, non-empiric calculations of the structure and stability of HAO 2 , HAS 2 , HOAS, HSAO molecules and ions with 16 valent electrons (A = B, Al, C + , Si + ) were made. Similarity of OAS, AO 2 , AS 2 (A = B - , Al - , C, Si) molecules and ions to proton was ascertained

  12. C/SiC/MoSi2-Si multilayer coatings for carbon/carbon composites for protection against oxidation

    International Nuclear Information System (INIS)

    Zhang Yulei; Li Hejun; Qiang Xinfa; Li Kezhi; Zhang Shouyang

    2011-01-01

    Highlights: → A C/SiC/MoSi 2 -Si multilayer coating was prepared on C/C by slurry and pack cementation. → Multilayer coating can protect C/C for 300 h at 1873 K or 103 h at 1873 K in air. → The penetration cracks in the coating result in the weight loss of the coated C/C. → The fracture of the coated C/C in wind tunnel result from the excessive local stress. - Abstract: To improve the oxidation resistance of carbon/carbon (C/C) composites, a C/SiC/MoSi 2 -Si multilayer oxidation protective coating was prepared by slurry and pack cementation. The microstructure of the as-prepared coating was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The isothermal oxidation and erosion resistance of the coating was investigated in electrical furnace and high temperature wind tunnel. The results showed that the multilayer coating could effectively protect C/C composites from oxidation in air for 300 h at 1773 K and 103 h at 1873 K, and the coated samples was fractured after erosion for 27 h at 1873 K h in wind tunnel. The weight loss of the coated specimens was considered to be caused by the formation of penetration cracks in the coating. The fracture of the coated C/C composites might result from the excessive local stress in the coating.

  13. Aerospace Ceramic Materials: Thermal, Environmental Barrier Coatings and SiC/SiC Ceramic Matrix Composites for Turbine Engine Applications

    Science.gov (United States)

    Zhu, Dongming

    2018-01-01

    Ceramic materials play increasingly important roles in aerospace applications because ceramics have unique properties, including high temperature capability, high stiffness and strengths, excellent oxidation and corrosion resistance. Ceramic materials also generally have lower densities as compared to metallic materials, making them excellent candidates for light-weight hot-section components of aircraft turbine engines, rocket exhaust nozzles, and thermal protection systems for space vehicles when they are being used for high-temperature and ultra-high temperature ceramics applications. Ceramic matrix composites (CMCs), including non-oxide and oxide CMCs, are also recently being incorporated in gas turbine engines for high pressure and high temperature section components and exhaust nozzles. However, the complexity and variability of aerospace ceramic processing methods, compositions and microstructures, the relatively low fracture toughness of the ceramic materials, still remain the challenging factors for ceramic component design, validation, life prediction, and thus broader applications. This ceramic material section paper presents an overview of aerospace ceramic materials and their characteristics. A particular emphasis has been placed on high technology level (TRL) enabling ceramic systems, that is, turbine engine thermal and environmental barrier coating systems and non-oxide type SiC/SiC CMCs. The current status and future trend of thermal and environmental barrier coatings and SiC/SiC CMC development and applications are described.

  14. Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

    2016-01-01

    Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

  15. ProTEK PSB as Biotechnology Photosensitive Protection Mask on 3C-SiC-on-Si in MEMS Sensor

    Science.gov (United States)

    Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

    2016-11-01

    This project presents the fabrication of MEMS employing a cubic silicon carbide (3C- SiC) on silicon wafer using newly developed ProTEK PSB as biotechnology photosensitive protection mask. This new biotechnology can reduce the number of processes and simplify the process flow with minimal impact on overall undercut performance. The 680 pm thick wafer is back-etched, leaving the 3C-SiC thin film with a thickness of 1.0 μm as the flexible diaphragm to detect pressure. The effect of the new coating of ProTEK PSB on different KOH solvents were investigated depending on various factors such as development time, final cure temperature and the thickness of the ProTEK PSB deposited layer. It is found that 6.174 μm thickness of ProTEK PSB offers some possibility of reducing the processing time compared to silicon nitride etch masks in KOH (55%wt, 80°C). The new ProTEK PSB biotechnology photosensitive protection mask indicates good stability and sustains its performance in different treatments under KOH and IPA for 8 hours. This work also revealed that the fabrication of MEMS sensors using the new biotechnology photosensitive protection mask provides a simple assembly approach and reduces manufacturing costs. The MEMS sensor can operate up to 500 °C as indicated under the sensitivity of 0.826 pF/MPa with nonlinearity and hysteresis of 0.61% and 3.13%, respectively.

  16. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.

    Science.gov (United States)

    Liu, Baodan; Yang, Bing; Yuan, Fang; Liu, Qingyun; Shi, Dan; Jiang, Chunhai; Zhang, Jinsong; Staedler, Thorsten; Jiang, Xin

    2015-12-09

    In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting

  17. Prevalence, Risk Factors, and Treatment Outcomes of Isoniazid- and Rifampicin-Mono-Resistant Pulmonary Tuberculosis in Lima, Peru.

    Directory of Open Access Journals (Sweden)

    Leonela Villegas

    Full Text Available Isoniazid and rifampicin are the two most efficacious first-line agents for tuberculosis (TB treatment. We assessed the prevalence of isoniazid and rifampicin mono-resistance, associated risk factors, and the association of mono-resistance on treatment outcomes.A prospective, observational cohort study enrolled adults with a first episode of smear-positive pulmonary TB from 34 health facilities in a northern district of Lima, Peru, from March 2010 through December 2011. Participants were interviewed and a sputum sample was cultured on Löwenstein-Jensen (LJ media. Drug susceptibility testing was performed using the proportion method. Medication regimens were documented for each patient. Our primary outcomes were treatment outcome at the end of treatment. The secondary outcome included recurrent episodes among cured patients within two years after completion of the treatment.Of 1292 patients enrolled, 1039 (80% were culture-positive. From this subpopulation, isoniazid mono-resistance was present in 85 (8% patients and rifampicin mono-resistance was present in 24 (2% patients. In the multivariate logistic regression model, isoniazid mono-resistance was associated with illicit drug use (adjusted odds ratio (aOR = 2.10; 95% confidence interval (CI: 1.1-4.1, and rifampicin mono-resistance was associated with HIV infection (aOR = 9.43; 95%CI: 1.9-47.8. Isoniazid mono-resistant patients had a higher risk of poor treatment outcomes including treatment failure (2/85, 2%, p-value<0.01 and death (4/85, 5%, p<0.02. Rifampicin mono-resistant patients had a higher risk of death (2/24, 8%, p<0.01.A high prevalence of isoniazid and rifampicin mono-resistance was found among TB patients in our low HIV burden setting which were similar to regions with high HIV burden. Patients with isoniazid and rifampicin mono-resistance had an increased risk of poor treatment outcomes.

  18. Quality of Metal Deposited Flux Cored Wire With the System Fe-C-Si-Mn-Cr-Mo-Ni-V-Co

    Science.gov (United States)

    Gusev, Aleksander I.; Kozyrev, Nikolay A.; Osetkovskiy, Ivan V.; Kryukov, Roman E.; Kozyreva, Olga A.

    2017-10-01

    Studied the effect of the introduction of vanadium and cobalt into the charge powder fused wire system Fe-C-Si-Mn-Cr-Ni-Mo-V, used in cladding assemblies and equipment parts and mechanisms operating under abrasive and abrasive shock loads. the cored wires samples were manufactured in the laboratory conditions and using appropriate powder materials and as a carbonfluoride contained material were used the dust from gas purification of aluminum production, with the following components composition, %: Al2O3 = 21-46.23; F = 18-27; Na2O = 8-15; K2O = 0.4-6; CaO = 0.7-2.3; Si2O = 0.5-2.48; Fe2O3 = 2.1-3.27; C = 12.5-30.2; MnO = 0.07-0.9; MgO = 0.06-0.9; S = 0.09-0.19; P = 0.1-0.18. Surfacing was produced on the St3 metal plates in 6 layers under the AN-26C flux by welding truck ASAW-1250. Cutting and preparation of samples for research had been implemented. The chemical composition and the hydrogen content of the weld metal were determined by modern methods. The hardness and abrasion rate of weld metal had been measured. Conducted metallographic studies of weld metal: estimated microstructure, grain size, contamination of oxide non-metallic inclusions. Metallographic studies showed that the microstructure of the surfaced layer by cored wire system Fe-C-Si-Mn-Cr-Mo-Ni-V-Co is uniform, thin dendrite branches are observed. The microstructure consists of martensite, which is formed inside the borders of the former austenite grain retained austenite present in small amounts in the form of separate islands, and thin layers of δ-ferrite, which is located on the borders of the former austenite grains. Carried out an assessment the effect of the chemical composition of the deposited metal on the hardness and wear and hydrogen content. In consequence of multivariate correlation analysis, it was determined dependence to the hardness of the deposited layer and the wear resistance of the mass fraction of the elements included in the flux-cored wires of the system Fe-C-Si

  19. Multi-scale approach to the mechanical behavior of SiC/SiC composites: the concept of mini-composite

    International Nuclear Information System (INIS)

    Lamon, J.

    2007-01-01

    Full text of publication follows: The concept of composite materials is very powerful, since one can tailor the properties with respect to end use applications, through a sound combination of constituents, including fibre, matrix and inter-phases. Ceramic matrix composites (CMCs) are at the forefront of advanced materials technology because of their light weight, high strength and toughness, high temperature capabilities and graceful failure under loading. This key behaviour is achieved by proper design of the fiber/matrix interface which helps in arresting and deflecting the cracks formed in the brittle matrix under load and preventing the early failure of the fiber arrangement. Ceramic matrix composites are considered as enabling technology for advanced aero-propulsion, space power, aerospace vehicles, space structures, ground transportation, as well as nuclear and chemical industries. During the last 30 years, tremendous progress has been made in the development of CMCs. Much research work has been conducted by LCTS on those SiC/SiC composites made via Chemical Vapor Infiltration. A multi-scale approach to mechanical behaviour has been developed. This multi-scale approach is aimed at relating the mechanical behaviour at macroscopic scale to constituent properties. It involves experiments and modelling. It allows chemical effects to be introduced in the models of mechanical behaviour. The present paper discusses the main features of the mechanical behaviour of textile SiC/SiC composites. These features are related to composite microstructure, properties of constituents (fibers, matrix and interphase) and fiber arrangement. Relationships between properties at different scales are established. Then the mini-composite concept is addressed. This concept is very powerful for composite design and investigation. Mini-composites consist of unidirectional composites reinforced by multi-filament tows. Mini-composites represent the mesoscale of textile composites. In

  20. Comparison between mono-bloc and bi-bloc mandibular advancement devices for obstructive sleep apnea.

    Science.gov (United States)

    Lee, Woo Hyun; Wee, Jee Hye; Lee, Chul Hee; Kim, Min-Su; Rhee, Chae-Seo; Yun, Pil-Young; Yoon, In-Young; Kim, Jeong-Whun

    2013-11-01

    Although mandibular advancement device (MAD) is widely used, there are a few papers comparing the efficacy and compliance at the same time according to the type of MAD. The aim of this study is to compare the efficacy and compliance between mono-bloc and bi-bloc MAD in the treatment of obstructive sleep apnea (OSA). Ninety-three patients who treated with mono-bloc MAD and 60 patients with bi-bloc MAD from January 2007 through September 2011 were retrospectively enrolled. All the patients underwent full-night polysomnography(PSG) before and 3 months after MAD was applied. The response rate was significantly higher in the patients using mono-bloc than those using bi-bloc MAD (77.4 vs. 58.3 %; P = 0.012). In contrast, the compliance rate of MAD use was significantly higher in the patients using bi-bloc than those using mono-bloc MAD (68.8 vs. 83.3 %; P = 0.044) at 1 year. According to the severity of OSA, the response rate was significantly higher in severe OSA than in mild to moderate OSA (P = 0.033 for mono-bloc MAD and P = 0.048 for bi-bloc MAD). However, there was no difference in the compliance between mild to moderate OSA and severe OSA. Our study showed that mono-bloc MAD was superior to bi-bloc MAD in efficacy while bi-bloc MAD is superior to mono-bloc MAD in compliance. We propose that both the efficacy and compliance should be considered in using MAD for treatment of OSA.

  1. Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers

    Czech Academy of Sciences Publication Activity Database

    Toušek, J.; Toušková, J.; Poruba, A.; Hlídek, P.; Lorinčík, Jan

    2006-01-01

    Roč. 100, č. 11 (2006), s. 113716.1-113716.6 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z20670512 Keywords : solar cells * hydrogen * plasma Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.316, year: 2006

  2. In-situ Observation of Fracture Behavior on Nano Structure in NITE SiC/SiC Composite by HVEM

    International Nuclear Information System (INIS)

    Shibayama, Tamaki; Hamada, Kouichi; Watanabe, Seiichi; Matsuo, Genichiro; Kishimoto, Hirotatsu

    2011-01-01

    We have been successfully done in situ observation on the sequence of fracture event at the interface of NITE SiC/SiC composite examined by using miniaturized double notched shear specimen for TEM prepared by Focused Ion Beam method. In this study, we used nano-mechanics TEM experimental apparatus to investigate not only microstructure evolution and but also load and displacement curve at once in High Voltage Electron Microscope. Our results summarize as follows. Cracks were initiated at the interface between carbon coating layer on the SiC fiber and SiC matrices, and propagated along the interface. Load drop in the load and displacement curve during in-situ TEM was clearly observed at the crack initiation. The shear strength by using the miniaturized specimen is about ten times higher than that obtained by the standard testing.

  3. Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction

    Science.gov (United States)

    Naseri, Mosayeb; Lin, Shiru; Jalilian, Jaafar; Gu, Jinxing; Chen, Zhongfang

    2018-06-01

    By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanomaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the electronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and exceptional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.

  4. Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

    2017-12-01

    The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

  5. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  6. The low-lying quartet electronic states of group 14 diatomic borides XB (X = C, Si, Ge, Sn, Pb)

    Science.gov (United States)

    Pontes, Marcelo A. P.; de Oliveira, Marcos H.; Fernandes, Gabriel F. S.; Da Motta Neto, Joaquim D.; Ferrão, Luiz F. A.; Machado, Francisco B. C.

    2018-04-01

    The present work focuses in the characterization of the low-lying quartet electronic and spin-orbit states of diatomic borides XB, in which X is an element of group 14 (C, Si, Ge, Sn, PB). The wavefunction was obtained at the CASSCF/MRCI level with a quintuple-ζ quality basis set. Scalar relativistic effects were also taken into account. A systematic and comparative analysis of the spectroscopic properties for the title molecular series was carried out, showing that the (1)4Π→X4Σ- transition band is expected to be measurable by emission spectroscopy to the GeB, SnB and PbB molecules, as already observed for the lighter CB and SiB species.

  7. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Lohrmann, A.; Klein, J. R.; Prawer, S.; McCallum, J. C. [School of Physics, The University of Melbourne, Victoria 3010 (Australia); Castelletto, S. [School of Engineering, RMIT University, Melbourne, Victoria 3001 (Australia); Ohshima, T. [SemiConductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Bosi, M.; Negri, M. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Lau, D. W. M.; Gibson, B. C. [ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, Victoria 3001 (Australia); Johnson, B. C. [ARC Centre of Excellence for Quantum Computing and Communication Technology, School of Physics, University of Melbourne, Victoria 3010 (Australia)

    2016-01-11

    In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.

  8. Methodology for assessing the interfacial sliding stress of a 2D woven SiC-SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Morvan, J.-M.; Baste, S. [Bordeaux-1 Univ., 33 - Talence (France)

    1999-03-01

    A micromechanical model is established to assess the value of the interfacial sliding stress as a function of the elastic and inelastic strains, the transverse crack density and the area upon which the sliding takes. The interfacial sliding stress is then measured during all the tensile test whether the damage occurs at the meso or at the microstructure level of a 2D SiC-SiC composite. The ultrasonic characterization through the complete determination of the stiffness tensor along a tensile test detects all the damage mechanisms and allows a strain partition under load which separates the various mechanisms responsible for the non-linear behavior of ceramic matrix composites (CMCs). It results that, according to the scale of the composite, the interfacial sliding stress exhibits a different value due to the nature of the bonding. (orig.) 13 refs.

  9. From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth

    International Nuclear Information System (INIS)

    Chaudhari, V.A.; Solanki, C.S.

    2009-01-01

    Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of un optimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated

  10. Impact of one-dimensional photonic crystal back reflector in thin-film c-Si solar cells on efficiency

    Science.gov (United States)

    Jalali, Tahmineh

    2018-05-01

    In this work, the effect of one-dimensional photonic crystal on optical absorption, which is implemented at the back side of thin-film crystalline silicon (c-Si) solar cells, is extensively discussed. The proposed structure acts as a Bragg reflector which reflects back light to the active layer as well as nanograting which couples the incident light to enhance optical absorption. To understand the optical mechanisms responsible for the enhancement of optical absorption, quantum efficiency and current density for all structures are calculated and the effect of influential parameters, such as grating period is investigated. The results confirm that our proposed structure have a great deal for substantial efficiency enhancement in a broad range from 400 to 1100 nm.

  11. Thermo-mechanical design windows for SiC/SiC composite first wall of A-SSTR2

    International Nuclear Information System (INIS)

    He Kaihui; Satoshi Nishio

    2002-01-01

    The finite element analysis and calculation is performed for the blanket first wall made of SiC/SiC composite material for Advanced Steady-state Tokamak Reactor 2, A-SSTR2, which is now conceptually designed in Naka Fusion Research Establishment, JAERI. Comparison analysis and design window is analyzed by using the finite element code ADINA 7.4. Through 2D calculation for various geometrical configurations and sensitive material properties, a fundamental guideline for first wall and blanket design is established with respect to maximum temperature, thermal and mechanical stress for many configurations. To satisfy hydrodynamic requirement, a4d4 (the dimension of coolant channel is 4 mm x 8 mm, and the distance between neighboring channels is 4 mm) is chosen as design point for high thermal conductivity up to 50 W/m·K

  12. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

    International Nuclear Information System (INIS)

    Lohrmann, A.; Klein, J. R.; Prawer, S.; McCallum, J. C.; Castelletto, S.; Ohshima, T.; Bosi, M.; Negri, M.; Lau, D. W. M.; Gibson, B. C.; Johnson, B. C.

    2016-01-01

    In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices

  13. Sol-gel derived C-SiC composites and protective coatings for sustained durability in the space environment

    Science.gov (United States)

    Haruvy, Yair; Liedtke, Volker

    2003-09-01

    Composites and coatings were produced via the fast sol-gel process of a mixture of alkoxysilane precursors. The composites were comprised of carbon fibers, fabrics, or their precursors as reinforcement, and sol-gel-derived silicon carbide as matrix, aiming at high-temperature stable ceramics that can be utilized for re-entry structures. The protective coatings were comprised of fluorine-rich sol-gel derived resins, which exhibit high flexibility and coherence to provide sustained ATOX protection necessary for LEO space-exposed elements. For producing the composites, the sol-gel-derived resin is cast onto the reinforcement fibers/fabrics mat (carbon or its precursors) to produce a 'green' composite that is being cured. The 'green' composite is converted into a C-SiC composite via a gradual heat-pressure process under inert atmosphere, during which the organic substituents on the silicon atoms undergo internal oxidative pyrolysis via the schematic reaction: (SiRO3/2)n -> SiC + CO2 + H2O. The composition of the resultant silicon-oxi-carbide is tailorable via modifying the composition of the sol-gel reactants. The reinforcement, when made of carbon precursors, is converted into carbon during the heat-and-pressure processing as well. The C-SiC composites thus derived exhibit superior thermal stability and comparable thermal conductivity, combined with good mechanical strength features and failure resistance, which render them greatly applicable for re-entry shielding, heat-exchange pipes, and the like. Fluorine rich sol-gel derived coatings were developed as well, via the use of HF rich sol-gel process. These coatings provide oxidation-protection via the silica formation process, together with flexibility that allows 18,000 repetitive folding of the coating without cracking.

  14. Use of the Materials Genome Initiative (MGI approach in the design of improved-performance fiber-reinforced SiC/SiC ceramic-matrix composites (CMCs

    Directory of Open Access Journals (Sweden)

    Jennifer S. Snipes

    2016-07-01

    Full Text Available New materials are traditionally developed using costly and time-consuming trial-and-error experimental efforts. This is followed by an even lengthier material-certification process. Consequently, it takes 10 to 20 years before a newly-discovered material is commercially employed. An alternative approach to the development of new materials is the so-called materials-by-design approach within which a material is treated as a complex hierarchical system, and its design and optimization is carried out by employing computer-aided engineering analyses, predictive tools and available material databases. In the present work, the materials-by-design approach is utilized to design a grade of fiber-reinforced (FR SiC/SiC ceramic matrix composites (CMCs, the type of materials which are currently being used in stationary components, and are considered for use in rotating components, of the hot sections of gas-turbine engines. Towards that end, a number of mathematical functions and numerical models are developed which relate CMC constituents’ (fibers, fiber coating and matrix microstructure and their properties to the properties and performance of the CMC as a whole. To validate the newly-developed materials-by-design approach, comparisons are made between experimentally measured and computationally predicted selected CMC mechanical properties. Then an optimization procedure is employed to determine the chemical makeup and processing routes for the CMC constituents so that the selected mechanical properties of the CMCs are increased to a preset target level.

  15. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, H. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany)], E-mail: angermann@hmi.de; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany); Huebener, K.; Hauschild, J. [Freie Universitaet Berlin, FB Physik, Arnimallee 14, 14195 Berlin (Germany)

    2008-08-30

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D{sub it}(E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency.

  16. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    International Nuclear Information System (INIS)

    Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

    2008-01-01

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

  17. Analysis of mechanical properties of N2in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

    International Nuclear Information System (INIS)

    Kim, Kang-San; Han, Ki-Bong; Chung, Gwiy-Sang

    2010-01-01

    This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N 2 in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 deg. C using single-precursor hexamethyildisilane: Si 2 (CH 3 ) 6 (HMDS) as Si and C precursors, and 0∼100 sccm N 2 as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N 2 , respectively. Young's modulus and hardness decreased with increasing N 2 flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N 2 flow rate.

  18. a-Si:H/μc-Si:H solar cells prepared by the single-chamber processes—minimization of phosphorus and boron cross contamination

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, Tsvetelina, E-mail: t.merdzhanova@fz-juelich.de; Zimmermann, Thomas; Zastrow, Uwe; Gordijn, Aad; Beyer, Wolfhard

    2013-07-01

    Single-chamber processes for the deposition of high efficiency thin-film silicon tandem cells of an a-Si:H p-i-n (top cell)/μc-Si:H p-i-n (bottom cell) structure involving short fabrication time are reported. An industry relevant reactor and an excitation frequency of 13.56 MHz were used. The conversion efficiency is found to be highly sensitive to dopant cross contamination into the μc-Si:H i-layer of the bottom cell and within the n/p-interface of the tunnel recombination junction (TRJ). Different reactor treatments at the p/i-interfaces of the top and bottom cells and at the n/p-interface of the TRJ were applied, aiming to prevent dopant cross contamination. The phosphorus and the boron concentrations were evaluated by secondary ion mass spectrometry measurements. Phosphorus cross contamination after TRJ n-layer deposition is found to result in significant n-type doping of the μc-Si:H i-layer of the bottom cell if no reactor treatment is applied. In situ reactor treatment via an Ar flush and pumping step of 15 min applied at the n/p-interface of TRJ results in reduction of the μc-Si:H i-layer phosphorus concentration to values below 10{sup 17} cm{sup −3}. A conversion efficiency of 11.8% for such tandem cells is demonstrated. Shorter interface treatment time with phosphorus concentrations in the μc-Si:H i-layer of about 5 × 10{sup 17} cm{sup −3} results in lower conversion efficiencies of 10.6%, mainly due to the decrease of open-circuit voltage and fill factor. - Highlights: • Single-chamber process for a-Si:H/μc-Si:H solar cell is developed. • P- and B-contaminations at n/p interface and μc-Si:H i-layer are quantified by SIMS. • Reactor treatment is required at n/p interface for minimum dopant cross contamination. • Ar-flush pumping of reactor reduces P concentration in μc-Si:H i-layer to 10{sup 17} cm{sup −3}{sub .} • Conversion efficiency of 11.4% is reached at reactor treatment time of 17 min.

  19. Observation of apparent MOS regimes on Al/PECVD grown boron nitride/p-c-Si/Al MIS structure, investigated through admittance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oezdemir, Orhan [Yildiz Technical University, Department of Physics, Esenler, istanbul (Turkey)

    2009-02-15

    PECVD grown boron nitride (BN) on crystalline silicon (c-Si) semiconductor was investigated by admittance measurement in the form of metal/insulator/semiconductor (MIS) structure. Apart from well-known regimes of traditional MOS structure, gradual bypassing of depletion layer was observed once ambient temperature (frequency) increased (decreased). Such an anomalous behavior was interpreted through modulations of charges located within BN film and/or at the interfacial layer of BN film/c-Si junction in terms of weighted average concept. (author)

  20. Water Resources Data for California, Water Year 1988. Volume 1. Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Polinoski, K.G.; Hoffman, E.B.; Smith, G.B.; Bowers, J.C.

    1989-01-01

    Water resources data for the 1988 water year for California consist of records of stage, discharge, and water quality of streams; stage and contents in lakes and reservoirs; and water levels and water quality in wells. Volume 1 contains discharge records for 134 gaging stations; stage and contents for 17 lakes and reservoirs; and water quality for 24 streams. Also included are 10 crest-stage partial-record stations, 5 miscellaneous measurement sites, and 16 water-quality partial-record stations. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  1. Water Resources Data for California, Water Year 1987. Volume 1. Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Bowers, J.C.; McConaughy, C.E.; Polinoski, K.G.; Smith, G.B.

    1988-01-01

    Water resources data for the 1987 water year for California consist of records of stage, discharge, and water quality of streams; stage and contents in lakes and reservoirs; and water levels and water quality in wells. Volume 1 contains discharge records for 134 gaging stations; stage and contents for 16 lakes and reservoirs; and water quality for 16 streams. Also included are 10 crest-stage partial-record stations, 3 miscellaneous measurement sites, and 10 water-quality partial-record stations. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  2. Water Resources Data for California, Water Year 1985. Volume 1. Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Bowers, J.C.; McConaughy, C.E.; Polinoski, K.G.; Smith, G.B.

    1987-01-01

    Water resources data for the 1985 water year for California consists of records of stage, discharge, and water quality of streams; stage and contents in lakes and reservoirs; and water levels and water quality in wells. Volume 1 contains discharge records for 150 gaging stations; stage and contents for 17 lakes and reservoirs; water quality for 23 streams. Also included are 10 crest-stage partial-record stations, three miscellaneous measurement sites, and one waterquality partial-record station. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  3. Water resources data for California, water year 1979; Volume 1: Colorado River basin, Southern Great Basin from Mexican Border to Mono Lake basin, and Pacific slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1981-01-01

    Water-resources data for the 1979 water year for California consist of records of stage, discharge, and water quality of streams; stage, contents, and water quality of lakes and reservoirs; records of water levels in selected observation wells; and selected chemical analyses of ground water. Records for a few pertinent streamflow and water-quality stations in bordering States are also included. These data, a contribution to the National Water Data System, were collected by the Geological Survey and cooperating local, State, and Federal agencies in California.

  4. Water resources data for California, water year 1978; Volume 1: Colorado River basin, southern Great Basin from Mexican border to Mono Lake basin, and Pacific Slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1979-01-01

    Water-resources data for the 1978 water year for California consist of records of stage, discharge, and water quality of streams; stage, contents, and water quality of lakes and reservoirs; records of water levels in selected observation wells; and selected chemical analyses of ground water. Records for a few pertinent streamflow and water-quality stations in bordering States are also included. These data, a contribution to the National water Data System, were collected by the Geological Survey and cooperating local, State, and Federal agencies in California.

  5. Water Resources Data for California, water year 1981: Vol. 1. Colorado River basin, Southern Great basin from Mexican Border to Mono Lake basin, and Pacific slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1982-01-01

    Water-resources data for the 1981 water year for California consists of records of stage, discharge, and water quality of streams; stage and contents in lakes and reservoirs; and water levels and water quality in wells. Volume 1 contains discharge records for 169 gaging stations; stage and contents for 19 lakes and reservoirs; water quality for 42 streams and 21 wells; water levels for 169 observation wells. Also included are 10 crest-stage partial-record stations. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  6. Water resources data for California, water year 1980; Volume 1, Colorado River basin, Southern Great Basin from Mexican border to Mono Lake basin, and Pacific slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1981-01-01

    Volume 1 of water resources data for the 1980 water year for California consists of records of stage, discharge, and water quality of streams; stage and contents in lake and reservoirs; and water levels in wells. This report contains discharge records for 174 gaging stations; stage and contents for 18 lakes and reservoirs; water quality for 51 stations; water levels for 165 observation wells. Also included are 9 crest-stage partial-record stations. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  7. Water Resources Data for California, Water Year 1986. Volume 1. Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Bowers, J.C.; McConaughy, C.E.; Polinoski, K.G.; Smith, G.B.

    1988-01-01

    Water resources data for the 1986 water year for California consist of records of stage, discharge, and water quality of streams; stage and contents in lakes and reservoirs; and water levels and water quality in wells. Volume 1 contains discharge records for 144 gaging stations; stage and contents for 15 lakes and reservoirs; watet quality for 21 streams. Also included are crest-stage partial-record stations, 3 miscellaneous measurement sites, and 5 water-quality partial-record stations. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  8. Water Resources Data--California, Water Year 2002, Volume 1, Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Rockwell, G.L.; Pope, G.L.; Agajanian, J.; Caldwell, L.A.

    2003-01-01

    Water-resources data for the 2002 water year for California consist of records of stage, discharge, and water quality of streams, stage and contents in lakes and reservoirs, and water levels and water quality in wells. Volume 1 contains discharge records for 188 gaging stations and 10 crest-stage partial-record stations, stage and contents for 19 lakes and reservoirs, gage-height records for 2 stations, water quality for 39 streamflow-gaging stations and 11 partial-record stations, and precipitation data for 1 station. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  9. Water resources data for California, water year 1976; Volume 1: Colorado River basin, southern Great Basin from Mexican border to Mono Lake basin, and Pacific Slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1977-01-01

    Water-resources data for the 1976 water year for California consist of records of stage, discharge, and water quality of streams; stage, contents, and water quality of lakes and reservoirs; records of water levels in selected observation wells; and selected chemical analyses of ground water. Records for a few pertinent streamflow and water-quality stations in bordering States are also included. The records were collected and computed by the Water Resources Division of the U.S. Geological Survey under the direction of Lee R. Peterson, district chief; Winchell Smith, assistant district chief for hydrologic data; and Leonard N. Jorgensen, chief of the basic-data section. These data, a contribution to the National Water Data System, were collected by the Geological Survey and cooperating local, State, and Federal agencies in California.

  10. Water Resources Data -- California, Water Year 2003, Volume 1, Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Pope, G.L.; Agajanian, J.; Caldwell, L.A.; Rockwell, G.L.

    2004-01-01

    Water-resources data for the 2003 water year for California consist of records of stage, discharge, and water quality of streams, stage and contents in lakes and reservoirs, and water levels and water quality in wells. Volume 1 contains discharge records for 193 gaging stations and 11 crest-stage partial-record stations, stage and contents for 22 lakes and reservoirs, gage-height records for 2 stations, water quality for 47 streamflow-gaging stations and 12 partial-record stations, and precipitation data for 1 station. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  11. Water resources data for California, water year 1975; Volume 1: Colorado River basin, southern Great Basin from Mexican border to Mono Lake basin, and Pacific Slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1977-01-01

    Water-resources data for the 1975 water year for California consist of records of streamflow and contents of reservoirs at gaging stations, partial-record stations, and miscellaneous sites; records of water quality including the physical, chemical, and biological characteristics of surface and ground water; and records of water levels in selected observation wells. Records for a few pertinent streamflow and water-quality stations in bordering States are also included. The records were collected and computed by the Water Resources Division of the U.S. Geological Survey under the direction of Lee R. Peterson, district chief; Winchell Smith, assistant district chief for hydrologic data; and Leonard N. Jorgensen, chief of the basic data section. These data represent that part of the National Water Data System collected by the Geological Survey and cooperating local, State, and Federal agencies in California.

  12. Water resources data, California, water year 2004, volume 1: Southern Great Basin from Mexican border to Mono Lake Basin, and Pacific Slope basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    Agajanian, J.; Caldwell, L.A.; Rockwell, G.L.; Pope, G.L.

    2005-01-01

    Water-resources data for the 2004 water year for California consist of records of stage, discharge, and water quality of streams, stage and contents in lakes and reservoirs, and water levels and water quality in wells. Volume 1 contains discharge records for 195 gaging stations and 10 crest-stage partial-record stations, stage and contents for 25 lakes and reservoirs, gage-height records for 2 stations, water quality for 47 streamflow-gaging stations and 7 partial-record stations, and precipitation data for 5 stations. These data represent that part of the National Water Data System operated by the U.S. Geological Survey and cooperating State and Federal agencies in California.

  13. Water resources data for California, water year 1977; Volume 1: Colorado River Basin, Southern Great Basin from Mexican Border to Mono Lake Basin, and Pacific Slope Basins from Tijuana River to Santa Maria River

    Science.gov (United States)

    ,

    1978-01-01

    Water-resources data for the 1977 water year for California consist of records of stage, discharge, and water quality of streams; stage, contents, and water quality of lakes and reservoirs; records of water levels in selected observation wells; and selected chemical analyses of ground water. Records for a few pertinent streamflow and water-quality stations in bordering States are also included. The records were collected and computed by the Water Resources Division of the U.S. Geological Survey under the direction of Winchell Smith, Assistant District Chief for Hydrologic Data and Leonard N. Jorgensen, Chief of the Basic-Data Section. These data, a contribution to the National Water Data System, were collected by the Geological Survey and cooperating local, State, and Federal agencies in California.

  14. Prototype tokamak fusion reactor based on SiC/SiC composite material focusing on easy maintenance

    International Nuclear Information System (INIS)

    Nishio, S.; Ueda, S.; Kurihara, R.; Kuroda, T.; Miura, H.; Sako, K.; Takase, H.; Seki, Y.; Adachi, J.; Yamazaki, S.; Hashimoto, T.; Mori, S.; Shinya, K.; Murakami, Y.; Senda, I.; Okano, K.; Asaoka, Y.; Yoshida, T.

    2000-01-01

    If the major part of the electric power demand is to be supplied by tokamak fusion power plants, the tokamak reactor must have an ultimate goal, i.e. must be excellent in construction cost, safety aspect and operational availability (maintainability and reliability), simultaneously. On way to the ultimate goal, the approach focusing on the safety and the availability (including reliability and maintainability) issues must be the more promising strategy. The tokamak reactor concept with the very high aspect ratio configuration and the structural material of SiC/SiC composite is compatible with this approach, which is called the DRastically Easy Maintenance (DREAM) approach. This is because SiC/SiC composite is a low activation material and an insulation material, and the high aspect ratio configuration leads to a good accessibility for the maintenance machines. As the intermediate steps along this strategy between the experimental reactor such as international thermonuclear experimental reactor (ITER) and the ultimate goal, a prototype reactor and an initial phase commercial reactor have been investigated. Especially for the prototype reactor, the material and technological immaturities are considered. The major features of the prototype and commercial type reactors are as follows. The fusion powers of the prototype and the commercial type are 1.5 and 5.5 GW, respectively. The major/minor radii for the prototype and the commercial type are of 12/1.5 m and 16/2 m, respectively. The plasma currents for the prototype and the commercial type are 6 and 9.2 MA, respectively. The coolant is helium gas, and the inlet/outlet temperatures of 500/800 and 600/900 deg. C for the prototype and the commercial type, respectively. The thermal efficiencies of 42 and 50% are obtainable in the prototype and the commercial type, respectively. The maximum toroidal field strengths of 18 and 20 tesla are assumed in the prototype and the commercial type, respectively. The thermal

  15. Dynamics of biogeochemical sulfur cycling in Mono Lake

    Science.gov (United States)

    Phillips, A. A.; Fairbanks, D.; Wells, M.; Fullerton, K. M.; Bao, R.; Johnson, H.; Speth, D. R.; Stamps, B. W.; Miller, L.; Sessions, A. L.

    2017-12-01

    Mono Lake, California is a closed-basin soda lake (pH 9.8) with high sulfate (120mM), and is an ideal natural laboratory for studying microbial sulfur cycling. Mono Lake is typically thermally stratified in summer while mixing completely in winter. However, large snowmelt inputs may induce salinity stratification that persists for up to five years, causing meromixis. During the California drought of 2014-16, the lake has mixed thoroughly each winter, but the abundant 2017 snowmelt may usher in a multi-year stratification. This natural experiment provides an opportunity to investigate the temporal relationship between microbial sulfur cycling and lake biogeochemistry. We analyzed water samples from five depths at two stations in May of 2017, before the onset of meromixis. Water column sulfate isotope values were generally constant with depth, centering at a δ34SVCDT of 17.39 ± 0.06‰. Organic sulfur isotopes were consistently lighter than lake sulfate, with a δ34SVCDT of 15.59 ± 0.56‰. This significant offset between organic and inorganic sulfur contradicts the minimal isotope effect associated with sulfate assimilation. Sediment push core organic values were further depleted, ranging between δ34SVCDT of -8.94‰ and +0.23‰, implying rapid turnover of Mono Lake sulfur pools. Both lipid biomarkers and 16S rRNA gene amplicons identify Picocystis salinarum, a unicellular green alga, as the dominant member of the microbial community. However, bacterial biomarkers and 16S rRNA genes point to microbes capable of sulfur cycling. We found that dsrA increased with depth (R2 = 0.9008, p reducers and sulfide oxidizers after >1 year of stratification. We saw no evidence in May of 2017 of sulfate reducing bacteria across the oxycline. Additionally, no sulfide was detectable in lake bottom waters despite oxygen below 6.25 µM. Preliminary results suggest a dynamic interplay between sulfide oxidation, sulfate reduction, and the onset of lake stratification. Additional

  16. On mono-W signatures in spin-1 simplified models

    Directory of Open Access Journals (Sweden)

    Ulrich Haisch

    2016-09-01

    Full Text Available The potential sensitivity to isospin-breaking effects makes LHC searches for mono-W signatures promising probes of the coupling structure between the Standard Model and dark matter. It has been shown, however, that the strong sensitivity of the mono-W channel to the relative magnitude and sign of the up-type and down-type quark couplings to dark matter is an artifact of unitarity violation. We provide three different solutions to this mono-W problem in the context of spin-1 simplified models and briefly discuss the impact that our findings have on the prospects of mono-W searches at future LHC runs.

  17. On mono-W signatures in spin-1 simplified models

    International Nuclear Information System (INIS)

    Haisch, Ulrich; Tait, Tim M.P.

    2016-03-01

    The potential sensitivity to isospin-breaking effects makes LHC searches for mono-W signatures promising probes of the coupling structure between the Standard Model and dark matter. It has been shown, however, that the strong sensitivity of the mono-W channel to the relative magnitude and sign of the up-type and down-type quark couplings to dark matter is an artefact of unitarity violation. We provide three different solutions to this mono-W problem in the context of spin-1 simplified models and briefly discuss the impact that our findings have on the prospects of mono-W searches at future LHC runs.

  18. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  19. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  20. Ab-initio modeling of oxygen on the surface passivation of 3C-SiC nanostructures

    International Nuclear Information System (INIS)

    Cuevas, J.L.; Trejo, A.; Calvino, M.; Carvajal, E.; Cruz-Irisson, M.

    2012-01-01

    In this work the effect of OH on the electronic states of H-passivated 3C-SiC nanostructures, was studied by means of Density Functional Theory. We compare the electronic band structure for a [1 1 1]-oriented nanowire with total H, OH passivation and a combination of both. Also the electronic states of a porous silicon carbide case (PSiC) a C-rich pore surface in which the dangling bonds on the surface are saturated with H and OH was studied. The calculations show that the surface replacement of H with OH radicals is always energetically favorable and more stable. In all cases the OH passivation produced a similar effect than the H passivation, with electronic band gap of lower energy value than the H-terminated phase. When the OH groups are attached to C atoms, the band gap feature is changed from direct to indirect. The results indicate the possibility of band gap engineering on SiC nanostructures through the surface passivation species.

  1. Micromechanical experimental analysis and modelling of elastic and damageable behaviour of unidirectional SiC/SiC composites

    International Nuclear Information System (INIS)

    Chateau, C.

    2011-01-01

    Because of their potential use as a cladding material in future nuclear reactors, the complex mechanical behavior of SiC/SiC composites, which combines damage and anisotropy, must be understood and predictable. As part of a multi-scale approach, this work focuses on the first scale change: from the elementary constituents to the tow. Micromechanical approaches are implemented to describe the macroscopic behavior of the tow taking into account its microstructure heterogeneity and damage mechanisms occurring at the local scale. A representative virtual microstructure is generated based on a detailed microstructural investigation of the tow and its elastic response is studied by numerical homogenization. In addition to addressing the mechanical RVE issue, this study highlights the significant effects of residual porosity on the transverse behavior of the tow, due to the matrix infiltration process. The longitudinal damage is being studied through mini-composites, for which the evolution of microscopic damage mechanisms (matrix cracks and fiber breaks) is experimentally analyzed (in-situ SEM and tomography tensile tests). The identification of interfacial parameters of a 1D statistical damage model is based on the experimental characterization. Conventional assumptions of such models can adequately describe matrix cracking at macro and micro scale. However it is necessary to change them to get a proper prediction of ultimate failure. (author) [fr

  2. Development of ASTM Standard for SiC-SiC Joint Testing Final Scientific/Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Jacobsen, George [General Atomics, San Diego, CA (United States); Back, Christina [General Atomics, San Diego, CA (United States)

    2015-10-30

    As the nuclear industry moves to advanced ceramic based materials for cladding and core structural materials for a variety of advanced reactors, new standards and test methods are required for material development and licensing purposes. For example, General Atomics (GA) is actively developing silicon carbide (SiC) based composite cladding (SiC-SiC) for its Energy Multiplier Module (EM2), a high efficiency gas cooled fast reactor. Through DOE funding via the advanced reactor concept program, GA developed a new test method for the nominal joint strength of an endplug sealed to advanced ceramic tubes, Fig. 1-1, at ambient and elevated temperatures called the endplug pushout (EPPO) test. This test utilizes widely available universal mechanical testers coupled with clam shell heaters, and specimen size is relatively small, making it a viable post irradiation test method. The culmination of this effort was a draft of an ASTM test standard that will be submitted for approval to the ASTM C28 ceramic committee. Once the standard has been vetted by the ceramics test community, an industry wide standard methodology to test joined tubular ceramic components will be available for the entire nuclear materials community.

  3. Time-dependent bridging and life prediction of SiC/SiC in a hypothetical fusion environment

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Lewinsohn, C.A.; Windisch, C.F. Jr.; Jones, R.H.

    1996-01-01

    Growth of subcritical cracks in SiC/SiC composites of CG-Nicalon fibers with a ∼1 μm C-interphase has been measured on a related Basic Energy Sciences program using environments of purified argon and mixtures of argon and oxygen at 1073K to 1373K. Companion thermo-gravimetric (TGA) testing measured mass loss in identical environments. The TGA mass loss was from C-interphase oxidation to CO and CO 2 , which was undetectable in argon and linear with oxygen concentration in argon-oxygen mixtures, and was converted into an interphase linear recession rate. Crack growth in pure argon indicated that fiber creep was causing time-dependent crack bridging to occur, while crack growth in argon-oxygen mixtures indicated that time-dependent C-interphase recession was also causing time-dependent bridging with different kinetics. A model of time-dependent bridging was used to compute crack growth rates in argon and in argon-oxygen mixtures and gave an estimate of useable life of about 230 days at 1073K in a He + 1.01 Pa O 2 (10 ppm) environment

  4. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  5. Delamination Mechanisms of Thermal and Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Choi, Sung R.; Lee, Kang N.; Miller, Robert A.

    2003-01-01

    Advanced ceramic thermal harrier coatings will play an increasingly important role In future gas turbine engines because of their ability to effectively protect the engine components and further raise engine temperatures. However, the coating durability issue remains a major concern with the ever-increasing temperature requirements. In this paper, thermal cyclic response and delamination failure modes of a ZrO2-8wt%Y2O3 and mullite/BSAS thermaVenvironmenta1 barrier coating system on SiC/SiC ceramic matrix composites were investigated using a laser high-heat-flux technique. The coating degradation and delamination processes were monitored in real time by measuring coating apparent conductivity changes during the cyclic tests under realistic engine temperature and stress gradients, utilizing the fact that delamination cracking causes an apparent decrease in the measured thermal conductivity. The ceramic coating crack initiation and propagation driving forces under the cyclic thermal loads, in conjunction with the mechanical testing results, will be discussed.

  6. Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Shin-Wei Liang

    2013-01-01

    Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

  7. Time-dependent bridging and life prediction of SiC/SiC in a hypothetical fusion environment

    Energy Technology Data Exchange (ETDEWEB)

    Henager, C.H. Jr.; Lewinsohn, C.A.; Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    Growth of subcritical cracks in SiC/SiC composites of CG-Nicalon fibers with a {approximately}1 {mu}m C-interphase has been measured on a related Basic Energy Sciences program using environments of purified argon and mixtures of argon and oxygen at 1073K to 1373K. Companion thermo-gravimetric (TGA) testing measured mass loss in identical environments. The TGA mass loss was from C-interphase oxidation to CO and CO{sub 2}, which was undetectable in argon and linear with oxygen concentration in argon-oxygen mixtures, and was converted into an interphase linear recession rate. Crack growth in pure argon indicated that fiber creep was causing time-dependent crack bridging to occur, while crack growth in argon-oxygen mixtures indicated that time-dependent C-interphase recession was also causing time-dependent bridging with different kinetics. A model of time-dependent bridging was used to compute crack growth rates in argon and in argon-oxygen mixtures and gave an estimate of useable life of about 230 days at 1073K in a He + 1.01 Pa O{sub 2} (10 ppm) environment.

  8. Effect of fiber coating on interfacial shear strength of SiC/SiC by nano-indentation technique

    International Nuclear Information System (INIS)

    Hinoki, T.; Zhang, W.; Kohyama, A.; Noda, T.

    1998-01-01

    In order to quantitatively evaluate mechanical properties of fibers, matrices and their interfaces in fiber reinforced SiC/SiC composites, fiber push-out tests have been carried out. From the indentation load vs. displacement relations, the fiber push-out process has been discussed in comparison with the C/C composites and the loads for fiber push-in and those for fiber push-out were estimated. The trends of load-displacement curve of fiber push-out process depended on specimen thickness. The curve in the case of thick specimen had a micro step indicating fiber push-in and a larger step corresponding to fiber push-out. However just a larger step indicating fiber push-out was seen without fiber push-in process in the case of thin specimen. Interfacial shear stress was discussed and defined in both cases. The effects of fiber coatings on interfacial shear stress obtained from thin specimens were analyzed. The relationship between bending stress and interfacial shear stress of SiC (pcs) /SiC (CVI) is preliminarily postulated together with microstructural characteristics of the composites. (orig.)

  9. Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst

    Science.gov (United States)

    Zhou, Qing; Yu, Yongzhi; Huang, Shan; Meng, Jiang; Wang, Jigang

    2017-07-01

    SiC/SiOx coaxial nanowires were rapidly synthesized via direct microwave irradiation in low vacuum atmosphere. During the preparation process, only graphite, silicon, silicon dioxide powders were used as raw materials and iron-containing substance was employed as catalyst. Comprehensive characterizations were employed to investigate the microstructure of the products. The results showed that a great quantity of coaxial nanowires with uniform sizes and high aspect ratio had been successfully achieved. The coaxial nanowires consist of a silicon oxide (SiOx) shell and a β-phase silicon carbide (β-SiC) core that exhibited in special tube brush like. In additional, nearly all the products were achieved in the statement of pure SiC/SiOx coaxial nanowires without the existence of metallic catalyst, indicating that the self-removal of iron (Fe) catalyst should be occurred during the synthesis process. Photoluminescence (PL) spectral analysis result indicated that such novel SiC/SiOx coaxial nanowires exhibited significant blue-shift. Besides, the measurement results of field-emission (FE) demonstrated that the SiC/SiOx coaxial nanowires had ultralow turn-on field and threshold field with values of 0.2 and 2.1 V/μm, respectively. The hetero-junction structure formed between SiOx shell and SiC core, lots of emission sites, as well as clear tips of the nanowires were applied to explain the excellent FE properties.[Figure not available: see fulltext.

  10. Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

    NARCIS (Netherlands)

    Terlinden, N.M.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ~ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical

  11. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  12. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  13. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

    Science.gov (United States)

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-01

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  14. Physicochemical interactions resulting from the use of a SiC/SiC composite material in typical environments of future nuclear reactors

    International Nuclear Information System (INIS)

    Braun, James

    2014-01-01

    The development of high purity SiC fibers during the nineties has led to their consideration as nuclear reactors components through the use of SiC/SiC composites. SiC and SiC/SiC composites are considered as core materials of future nuclear reactors (SFR, GFR) and as a potential replacement for the zirconium cladding of PWR. Therefore, the thermochemical compatibility of these materials with typical environments of those nuclear reactors has been studied. The composition and the growth kinetics of the reaction zone of SiC towards niobium and tantalum (considered as materials to ensure the leak-tightness of a SiC/SiC cladding for GFR) have been studied between 1050 and 1500 C. High temperature heat treatments in open and closed systems between SiC and UO 2 have shown a significant reactivity over 1200 C characterized by the formation of CO and uranium silicides. Moreover, a liquid phase has been detected between 1500 and 1650 C. The exposure of SiC/SiC to liquid sodium (550 C, up to 2000 h) has been studied as a function of the oxygen concentration dissolved in liquid sodium. An improvement of the mechanical properties of the composites elaborated for this study (increase of the tensile strength and strain at failure) has been highlighted after immersion in the liquid sodium independently of its oxygen concentration. It is believed that this phenomenon is due to the presence of residual sodium in the material. (author) [fr

  15. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-04-01

    The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  16. Variation in the Optical Properties of the SiC-SiO2 Composite Antireflection Layer in Crystalline Silicon Solar Cells by Annealing

    Science.gov (United States)

    Jannat, Azmira; Li, Zhen Yu; Akhter, M. Shaheer; Yang, O.-Bong

    2017-11-01

    This study showed the effects of annealing on a sol-gel-derived SiC-SiO2 composite antireflection (AR) layer and investigated the optical and photovoltaic properties of crystalline silicon (Si) solar cells. The SiC-SiO2 composite AR coating showed a considerable decrease in reflectance from 7.18% to 3.23% at varying annealing temperatures of 450-800°C. The refractive indices of the SiC-SiO2 composite AR layer were tuned from 2.06 to 2.45 with the increase in annealing temperature. The analysis of the current density-voltage characteristics indicated that the energy conversion efficiencies of the fabricated Si solar cells gradually increased from 16.99% to 17.73% with increasing annealing temperatures of 450-800°C. The annealing of the SiC-SiO2 composite AR layer in Si solar cells was crucial to improving the optical, morphological, and photovoltaic properties.

  17. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  18. Monotonic, Creep-Rupture, and Fatigue Behavior of Carbon Fiber Reinforced Silicon Carbide (C/SiC) at an Elevated Temperature

    National Research Council Canada - National Science Library

    Engesser, John

    2004-01-01

    .... Cyclic loading of C/SiC was investigated at frequencies of 375 Hz, 10 Hz, 1 Hz, and 0.1 Hz. Creep-Rupture tests and tests that were combinations of creep-rupture and fatigue were also accomplished...

  19. Synthesis and optical characterization of C-SiO2 and C-NiO sol-gel composite films for use as selective solar absorbers

    CSIR Research Space (South Africa)

    Makiwa, G

    2008-08-01

    Full Text Available The authors present a cheaper and environmentally friendly method to fabricate efficient spectrally selective solar absorber materials. The sol-gel technique was used to fabricate carbon-silica (C-SiO2) and carbon-nickel oxide (C-NiO) composite...

  20. In-situ determination of the effective absorbance of thin μc-Si:H layers growing on rough ZnO:Al

    Directory of Open Access Journals (Sweden)

    Meier Matthias

    2013-10-01

    Full Text Available In this study optical transmission measurements were performed in-situ during the growth of microcrystalline silicon (μc-Si:H layers by plasma enhanced chemical vapor deposition (PECVD. The stable plasma emission was used as light source. The effective absorption coefficient of the thin μc-Si:H layers which were deposited on rough transparent conductive oxide (TCO surfaces was calculated from the transient transmission signal. It was observed that by increasing the surface roughness of the TCO, the effective absorption coefficient increases which can be correlated to the increased light scattering effect and thus the enhanced light paths inside the silicon. A correlation between the in-situ determined effective absorbance of the μc-Si:H absorber layer and the short-circuit current density of μc-Si:H thin-film silicon solar cells was found. Hence, an attractive technique is demonstrated to study, on the one hand, the absorbance and the light trapping in thin films depending on the roughness of the substrate and, on the other hand, to estimate the short-circuit current density of thin-film solar cells in-situ, which makes the method interesting as a process control tool.

  1. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process...

  2. Creep/Stress Rupture Behavior and Failure Mechanisms of Full CVI and Full PIP SiC/SiC Composites at Elevated Temperatures in Air

    Science.gov (United States)

    Bhatt, R. T.; Kiser, J. D.

    2017-01-01

    SiC/SiC composites fabricated by melt infiltration are being considered as potential candidate materials for next generation turbine components. However these materials are limited to 2400 F application because of the presence of residual silicon in the SiC matrix. Currently there is an increasing interest in developing and using silicon free SiC/SiC composites for structural aerospace applications above 2400 F. Full PIP or full CVI or CVI + PIP hybrid SiC/SiC composites can be fabricated without excess silicon, but the upper temperature stress capabilities of these materials are not fully known. In this study, the on-axis creep and rupture properties of the state-of-the-art full CVI and full PIP SiC/SiC composites with Sylramic-iBN fibers were measured at temperatures to 2700 F in air and their failure modes examined. In this presentation creep rupture properties, failure mechanisms and upper temperature capabilities of these two systems will be discussed and compared with the literature data.

  3. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    OpenAIRE

    Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

    2014-01-01

    This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

  4. Synergistic effect of displacement damage, helium and hydrogen on microstructural change of SiC/SiC composites fabricated by reaction bonding process

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, T.; Igawa, N.; Wakai, E.; Jitsukawa, S. [Japan Atomic Energy Agency, Naga-gun, Ibaraki-ken (Japan); Hasegawa, A. [Tohoku Univ., Dept. of Quantum Science and Energy Engr., Sendai (Japan)

    2007-07-01

    Full text of publication follows: Continuous silicon carbide (SiC) fiber reinforced SiC matrix (SiC/SiC) composites are known to be attractive candidate materials for first wall and blanket components in fusion reactors. In the fusion environment, helium and hydrogen are produced and helium bubbles can be formed in the SiC by irradiation of 14-MeV neutrons. Authors reported the synergistic effect of helium and hydrogen as transmutation products on swelling behavior and microstructural change of the SiC/SiC composites fabricated by chemical vapor infiltration (CVI) process. Authors also reported about the fabrication of high thermal conductive SiC/SiC composites by reaction bonding (RB) process. The matrix fabricated by RB process has different microstructures such as bigger grain size of SiC and including Si phase as second phase from that by CVI process. It is, therefore, investigated the synergistic effect of displacement damage, helium and hydrogen as transmutation products on the microstructure of SiC/SiC composite by RB process in this study. The SiC/SiC composites by RB process were irradiated by the simultaneous triple ion irradiation (Si{sup 2+}, He{sup +} and H{sup +}) at 800 and 1000 deg. C. The displacement damage was induced by 6.0 MeV Si{sup 2+} ion irradiation up to 10 dpa. The microstructures of irradiated SiC/SiC composites by RB process were observed by TEM. The double layer of carbon and SiC as interphase between fiber and matrix by a chemical vapor deposition (CVD) was coated on SiC fibers in the SiC/SiC composites by RB process. The TEM observation revealed that He bubbles were formed both in the matrix by RB and SiC interphase by CVD process. Almost all He bubbles were formed at the grain boundary in SiC interphase by CVD process. On the other hand, He bubbles were formed both at the grain boundary and in Si grain of the matrix by RB process. The average size of He bubbles in the matrix by RB was smaller than that in SiC interphase by CVD

  5. Radiation effects and micromechanics of SiC/SiC composites (December 1, 1990--November 14, 1993) and modeling the mechanical behavior of SiC/SiC composites in fusion environments (November 15, 1993--November 14, 1996). Final report, December 1, 1990--November 14, 1996

    International Nuclear Information System (INIS)

    Ghoniem, N.M.

    1997-01-01

    The development of Silicon Carbide composite materials for structural applications in fusion energy systems is mainly motivated by the prospect that fusion power systems utilizing the material will have a much more favorable environmental impact. The research team at UCLA was the first to identify the potential advantages of SiC/SiC composite materials through early System Studies. Consequently, two three-year term grants have been awarded to the team, in order to focus on modeling the effects of irradiation on key properties that have been recognized by the community as fundamental to the successful development of the composite. Two main tasks, which are further subdivided into several subtasks each, have been pursued during the course of research during the period: December 1990 through November 1996. The first task deals with modeling the effects of irradiation on the dimensional stability of SiC. To achieve this goal, a substantial effort was launched for modeling the evolution of the microstructure under irradiation. Rate and Fokker-Planck theories have been advanced to model the complex multi-component system of SiC under irradiation. The effort has resulted in a deeper understanding of the interaction between displacement damage components, and transmutant helium gas atoms. Utilizing the methods of Molecular Dynamics (MD) and Monte Carlo (MC), the energetics of defects and the basic displacement mechanisms in SiC have been fully delineated. An advanced Fokker-Planck approach was formulated to determine the phase content and size distribution of damage microstructure in SiC. Finally, a rate theory model was developed and successfully applied to the experimental swelling data on SiC. In the second task, the authors investigated the mechanical behavior of SiC/SiC composites under the irradiation conditions of fusion reactors. The main focus of the second task has been on developing models for the micro-mechanics of cracks in the fiber reinforced matrix of the

  6. Preliminary calculations of stress change of fuel pin using SiC/SiC composites for GFR with changing of thermal conductivity degradation by irradiation

    International Nuclear Information System (INIS)

    Lee, J. K.; Naganuma, M.

    2006-01-01

    Gas cooled Fast Reactor (GFR) is being researched as a candidate concept of Generation IV international Forum. As a main feature of GFR, it should be maintained high temperature and pressure of coolant gas for heat transfer efficiency. Such a demanding environment requires high-temperature-resistant structural materials distinguished from traditional steel material. Consequently, ceramics are promising candidate material of core components. Especially, Silicon Carbide fiber reinforced Silicon Carbide composites (SiC/SiC) have encouraging characteristics such as refractoriness, low activation and toughness. Application of new material to core components must be explained by the viewpoint of engineering validity. Therefore, present study surveyed that current report for mechanical strength and thermal conductivity of SiC/SiC composites. According to the reports, neutron irradiation environment degraded mechanical properties of SiC/SiC composites. To confirm applicability to core components, model of fuel pin using SiC/SiC composites was assumed with feasible mechanical properties. Furthermore, it was calculated and estimated that the stress caused by temperature variation of inner and outer side of assumed model of cladding tube. Stress was calculated by changing of input date such as thickness of cladding tube, temperature variation, thermal conductivity and linear power. In the range of this study, the most important factor was identified as degradation of thermal conductivity by irradiation. It caused a significant stress and limited a geometrical design of fuel pin. It was discussed that the differences of heat transfer between isotropic and anisotropic materials like a metal and composites. These results should be helpful not only to determine a design factor of core component but also to indicate an improvement direction of SiC/SiC composites. Through these work, reliability and safety of GFR will be increased

  7. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  8. Anti-RhoC siRNAs inhibit the proliferation and invasiveness of breast cancer cells via modulating the KAI1, MMP9, and CXCR4 expression

    Directory of Open Access Journals (Sweden)

    Xu X

    2017-03-01

    Full Text Available Xu-Dong Xu,1 Han-Bin Shen,1 Li Zhu,2 Jian-Qin Lu,2 Lin Zhang,3 Zhi-Yong Luo,3 Ya-Qun Wu3 1Department of Thyroid and Breast Surgery, The Fifth Hospital of Wuhan, Hanyang District, 2Department of Oncology, 3Department of Thyroid and Breast Surgery, Tongji Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei, People’s Republic of China Abstract: Overexpression of RhoC in breast cancer cells indicates poor prognosis. In the present study, we aim to investigate the possible antitumor effects of anti-RhoC small-interfering RNA (siRNA in inflammatory breast cancer cells. In this study, a specific anti-RhoC siRNA was used to inhibit RhoC synthesis. Transfection of anti-RhoC siRNA into two IBC cells SUM149 and SUM190 induced extensive degradation of target mRNA and led to significant decrease in the synthesis of protein. Anti-RhoC siRNA inhibited cell proliferation and invasion, increased cell apoptosis, and induced cell cycle arrest in vitro. Moreover, the transfection of siRNA increased the expression of KAI1 and decreased the expression of MMP9 and CXCR4 in both mRNA and protein levels. Furthermore, transplantation tumor experiments in BALB/c-nu mice showed that intratumoral injection of anti-RhoC siRNA inhibited tumor growth and increased survival rate. Our results suggested that RhoC gene silencing with specific anti-RhoC siRNA would be a potential therapeutic method for metastatic breast cancer. Keywords: gene silencing, proliferation, apoptosis, cell cycle arrest

  9. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  10. High pressure behaviour of uranium mono pnictides

    International Nuclear Information System (INIS)

    Pagare, Gitanjali; Ojha, Poonam; Sanyal, S.P.; Aynyas, Mahendra

    2006-01-01

    The pressure induced structural phase transition of three actinide mono pnictides AX (A=U and X=As, Sb, Bi), have been studied theoretically using two body interionic potential with necessary modifications to include the effect of Coulomb screening by the delocalized 5f electrons of the actinide (uranium) ion. The peculiar properties of these compounds have been interpreted in terms of the hybridization of f electrons with the conduction band. The calculated compression curves are compared with the experimental results. These compounds exhibits first order crystallographic phase transition from their NaCl (B 1 ) phase to CsCl (B 2 ) phase at 17GPa, 9.5GPa and 5.3 GPa respectively. The NaCl phase possesses lower energy than CsCl phase and stable at ambient pressure. (author)

  11. Scour properties of mono bucket foundation

    DEFF Research Database (Denmark)

    Stroescu, Ionut Emanuel; Frigaard, Peter Bak

    2016-01-01

    Field experience proved that the Mono Bucket Foundations (MBFs) have good response against scour development. Moreover, the ratio between large diameter (bucket lid) and the small diameter (shaft tower) is the driving parameter for the process of erosion/backfill, like scour protection diameter...... in the case of scour protected monopiles. However, the structural design to reduce the scour development for MBFs is still open to optimization. The influences of parameters that generate backfill and scour, the transfer load webs and the misalignment with seabed, have not been systematically studied until...... analysis compared with real surveys and existing studies showed good agreements. Scour protection based on collar solution shows high efficiency when scour protection should be required. The paper demonstrates good agreement between field measurements and small-scale studies. The unique value of the field...

  12. Half-metallicity and ferromagnetism of TcX (X=C, Si and Ge) in zinc blende structure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [College of Science, Yanshan University, Qinhuangdao 066004 (China); Physics Department, Brock University, St. Catharines, ON, Canada L2S 3A1 (Canada); Xing, Yue [College of Science, Yanshan University, Qinhuangdao 066004 (China); Bose, S.K., E-mail: sbose@brocku.ca [Physics Department, Brock University, St. Catharines, ON, Canada L2S 3A1 (Canada); Zhao, Yong-Hong [Department of Physics, Sichuan Normal University, Chengdu 610068 (China)

    2013-02-15

    We report results of a first-principles density-functional study of three binary transition-metal compounds TcX (X=C, Si and Ge) in the hypothetical cubic zinc blende (ZB) structure. Our calculations are based on the full potential linear augmented plane wave (FP-LAPW) plus local orbitals method, together with generalized gradient approximation for the exchange-correlation potential. Half-metallic (HM) ferromagnetism is observed in these binary compounds for their optimized cell volumes. In the HM state, these compounds possess an integer magnetic moment (1.000{mu}{sub B}) per formula unit, which is one of the important characteristics of half-metallic ferromagnets (HMFs). The ferromagnetic (FM) state is found to be stable for ZB TcC, TcSi and TcGe against the nonmagnetic (NM) and antiferromagnetic (AFM) states. Calculations show that half-metallicity can be maintained for a wide range of lattice constants in these binary compounds. Density functional calculations of exchange interactions and the Curie temperatures reveal similar trends for the three compounds with respect to the lattice parameter. These compounds are compatible with the traditional semiconductors, and could be useful in spin-electronics and other applications. The most important aspect of this work is to explore the possibility of not only magnetism, but HM ferromagnetism in compounds involving NM elements and 4d transition element Tc. - Highlights: Black-Right-Pointing-Pointer We study magnetism of the compounds TcSi, TcC, and TcGe. Black-Right-Pointing-Pointer These compounds, with nonmagnetic constituents, are found to be ferromagnetic. Black-Right-Pointing-Pointer They show robust half-metallicity in zinc blende structure. Black-Right-Pointing-Pointer Estimated Curie temperatures suggest that synthesis of these compounds is worth pursuing.

  13. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  14. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    International Nuclear Information System (INIS)

    Liao, B; Stangl, R; Ma, F; Mueller, T; Lin, F; Aberle, A G; Bhatia, C S; Hoex, B

    2013-01-01

    We demonstrate that by using a water (H 2 O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al 2 O 3 ) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s −1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al 2 O 3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100–400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance–voltage measurements reveal that the negative fixed charge density near the AlO x /c-Si interface increases from 1.4 × 10 12 to 3.3 × 10 12 cm −2 due to firing, while the midgap interface defect density reduces from 3.3 × 10 11 to 0.8 × 10 11 cm −2 eV −1 . This work demonstrates that direct firing activation of thermal ALD Al 2 O 3 is feasible, which could be beneficial for solar cell manufacturing. (paper)

  15. Improvement of μc-Si:H n–i–p cell efficiency with an i-layer made by hot-wire CVD by reverse H2-profiling

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    The technique of maintaining a proper crystalline ratio in microcrystalline silicon (μc-Si:H) layers along the thickness direction by decreasing the H2 dilution ratio during deposition (H2 profiling) was introduced by several laboratories while optimizing either n–i–p or p–i–n μc-Si:H cells made by

  16. Preparation and oxidation protection of CVD SiC/a-BC/SiC coatings for 3D C/SiC composites

    International Nuclear Information System (INIS)

    Liu Yongsheng; Zhang Litong; Cheng Laifei; Yang Wenbin; Zhang Weihua; Xu Yongdong

    2009-01-01

    An amorphous boron carbide (a-BC) coating was prepared by LPCVD process from BCl 3 -CH 4 -H 2 -Ar system. XPS result showed that the boron concentration was 15.0 at.%, and carbon was 82.0 at.%. One third of boron was distributed to a bonding with carbon and 37.0 at.% was dissolved in graphite lattice. A multiple-layered structure of CVD SiC/a-BC/SiC was coated on 3D C/SiC composites. Oxidation tests were conducted at 700, 1000, and 1200 deg. C in 14 vol.% H 2 O/8 vol.% O 2 /78 vol.% Ar atmosphere up to 100 h. The 3D C/SiC composites with the modified coating system had a good oxidation resistance. This resulted in the high strength retained ratio of the composites even after the oxidation.

  17. Mechanical Properties and Real-Time Damage Evaluations of Environmental Barrier Coated SiC/SiC CMCs Subjected to Tensile Loading Under Thermal Gradients

    Science.gov (United States)

    Appleby, Matthew; Zhu, Dongming; Morscher, Gregory

    2015-01-01

    SiC/SiC ceramic matrix composites (CMCs) require new state-of-the art environmental barrier coatings (EBCs) to withstand increased temperature requirements and high velocity combustion corrosive combustion gasses. The present work compares the response of coated and uncoated SiC/SiC CMC substrates subjected to simulated engine environments followed by high temperature mechanical testing to asses retained properties and damage mechanisms. Our focus is to explore the capabilities of electrical resistance (ER) measurements as an NDE technique for testing of retained properties under combined high heat-flux and mechanical loading conditions. Furthermore, Acoustic Emission (AE) measurements and Digital Image Correlation (DIC) were performed to determine material damage onset and accumulation.

  18. Fabrication of SiC Composites with Synergistic Toughening of Carbon Whisker and In Situ 3C-SiC Nanowire

    Directory of Open Access Journals (Sweden)

    Zhang Yunlong

    2016-01-01

    Full Text Available The SiC composites with synergistic toughening of carbon whisker and in situ 3C-SiC nanowire have been fabricated by hot press sinter technology and annealed treatment technology. Effect of annealed time on the morphology of SiC nanowires and mechanical properties of the Cw/SiC composites was surveyed in detail. The appropriate annealed time improved mechanical properties of the Cw/SiC composites. The synergistic effect of carbon whisker and SiC nanowire can improve the fracture toughness for Cw/SiC composites. The vapor-liquid-solid growth (VLS mechanism was proposed. TEM photo showed that 3C-SiC nanowire can be obtained with preferential growth plane ({111}, which corresponded to interplanar spacing about 0.25 nm.

  19. Investigation of the agglomeration and amorphous transformation effects of neutron irradiation on the nanocrystalline silicon carbide (3C-SiC) using TEM and SEM methods

    Energy Technology Data Exchange (ETDEWEB)

    Huseynov, Elchin M., E-mail: elchin.h@yahoo.com [Department of Nanotechnology and Radiation Material Science, National Nuclear Research Center, Inshaatchilar pr. 4, AZ 1073 Baku (Azerbaijan); Institute of Radiation Problems of Azerbaijan National Academy of Sciences, B.Vahabzade 9, AZ 1143 Baku (Azerbaijan)

    2017-04-01

    Nanocrystalline 3C-SiC particles irradiated by neutron flux during 20 h in TRIGA Mark II light water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning Electron Microscope (SEM) and Transmission Electron Microscopy (TEM) devices before and after neutron irradiation. The agglomeration of nanoparticles was studied comparatively before and after neutron irradiation. After neutron irradiation the amorphous layer surrounding the nanoparticles was analyzed in TEM device. Neutron irradiation defects in the 3C-SiC nanoparticles and other effects investigated by TEM device. The effect of irradiation on the crystal structure of the nanomaterial was studied by selected area electron diffraction (SAED) and electron diffraction patterns (EDP) analysis.

  20. Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates

    International Nuclear Information System (INIS)

    Kim-Hak, Olivier; Ferro, Gabriel; Lorenzzi, Jean; Carole, Davy; Dazord, Jacques; Chaudouet, Patrick; Chaussende, Didier; Miele, Philippe

    2010-01-01

    The contact between α-SiC crystals and Si-Ge based melts provokes the nucleation of 3C-SiC islands on the crystal surface. Evolution of these islands as a function of various parameters was studied. On both 4H and 6H substrates, it was found that, after nucleation, 3C-SiC islands first enlarge and may form a complete 3C layer under certain conditions. The 3C deposit can then be dissolved by the liquid phase at high temperature or for prolonged contact at relatively moderate temperature. The graphite crucible is proposed to play a central role in these enlargement and dissolution mechanisms by providing extra carbon atoms on the seed surface (enlargement) or provoking thermal induced carbon transport toward the sidewall (dissolution). Several differences between the use of 4H and 6H substrates were also observed.

  1. Development of Advanced Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Path Toward 2700 F Temperature Capability and Beyond

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Good, Brian; Costa, Gustavo; Bhatt, Ramakrishna T.; Fox, Dennis S.

    2017-01-01

    Advanced environmental barrier coating systems for SiC-SiC Ceramic Matrix Composite (CMC) turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant coating development challenges is to achieve prime-reliant environmental barrier coating systems to meet the future 2700F EBC-CMC temperature stability and environmental durability requirements. This presentation will emphasize recent NASA environmental barrier coating system testing and down-selects, particularly the development path and properties towards 2700-3000F durability goals by using NASA hafnium-hafnia-rare earth-silicon-silicate composition EBC systems for the SiC-SiC CMC turbine component applications. Advanced hafnium-based compositions for enabling next generation EBC and CMCs capabilities towards ultra-high temperature ceramic coating systems will also be briefly mentioned.

  2. High-resolution aeromagnetic survey of the Mono Basin-Long Valley Caldera region, California

    Science.gov (United States)

    Ponce, D. A.; Mangan, M.; McPhee, D.

    2013-12-01

    A new high-resolution aeromagnetic survey of the Mono Basin-Long Valley Caldera region greatly enhances previous magnetic interpretations that were based on older, low-resolution, and regional aeromagnetic data sets and provides new insights into volcano-tectonic processes. The surveyed area covers a 8,750 km2 NNW-trending swath situated between the Sierra Nevada to the west and the Basin and Range Province to the east. The surveyed area includes the volcanic centers of Mono Lake, Mono-Inyo Craters, Mammoth Mountain, Devils Postpile, and Long Valley Caldera. The NW-trending eastern Sierra frontal fault zone crosses through the study area, including the active Mono Lake, Silver Lake, Hartley Springs, Laurel Creek, and Hilton Creek faults. Over 6,000 line-kilometers of aeromagnetic data were collected at a constant terrain clearance of 150 m, a flight-line spacing of 400 m, and a tie-line spacing of 4 km. Data were collected via helicopter with an attached stinger housing a magnetic sensor using a Scintrex CS-3 cesium magnetometer. In the northern part of the survey area, data improve the magnetic resolution of the individual domes and coulees along Mono Craters and a circular shaped magnetic anomaly that coincides with a poorly defined ring fracture mapped by Kistler (1966). Here, aeromagnetic data combined with other geophysical data suggests that Mono Craters may have preferentially followed a pre-existing plutonic basement feature that may have controlled the sickle shape of the volcanic chain. In the northeastern part of the survey, aeromagnetic data reveal a linear magnetic anomaly that correlates with and extends a mapped fault. In the southern part of the survey, in the Sierra Nevada block just south of Long Valley Caldera, aeromagnetic anomalies correlate with NNW-trending Sierran frontal faults rather than to linear NNE-trends observed in recent seismicity over the last 30 years. These data provide an important framework for the further analysis of the

  3. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Jaran Sritharathikhun

    2014-01-01

    Full Text Available This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ solar cells. A p-μc-SiO:H film with a wide optical band gap (E04, 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0, the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.

  4. Invariom based electron density studies on the C/Si analogues haloperidol/sila-haloperidol and venlafaxine/sila-venlafaxine.

    Science.gov (United States)

    Luger, Peter; Dittrich, Birger; Tacke, Reinhold

    2015-09-14

    The subjects of this study are the structures and electron densities of the carbon/silicon analogues haloperidol/sila-haloperidol (1a/1b) and venlafaxine/sila-venlafaxine (2a/2b). The parent carbon compounds 1a (an antipsychotic agent) and 2a (an antidepressant) are both in clinical use. For haloperidol/sila-haloperidol, three published structures were studied in more detail: the structures of haloperidol hydrochloride (1a·HCl), haloperidol hydropicrate (1a·HPic) and sila-haloperidol hydrochloride (1b·HCl). For venlafaxine/sila-venlafaxine, the published structures of venlafaxine (2a), venlafaxine hydrochloride (2a·HCl; as orthorhombic (2a·HCl-ortho) and monoclinic polymorph (2a·HCl-mono)) and sila-venlafaxine hydrochloride (2b·HCl) were investigated. Based on these structures, the molecular electron densities were reconstructed by using the invariom formalism. They were further analysed in terms of Bader's quantum theory of atoms in molecules, electrostatic potentials mapped onto electron density isosurfaces and Hirshfeld surfaces. These studies were performed with a special emphasis on the comparison of the corresponding carbon/silicon analogues.

  5. Bamboo-like 3C-SiC nanowires with periodical fluctuating diameter: Homogeneous synthesis, synergistic growth mechanism, and their luminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Meng; Zhao, Jian [School of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266061 (China); Li, Zhenjiang, E-mail: zhenjiangli@qust.edu.cn [School of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, China (China); Yu, Hongyuan [School of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266061 (China); Wang, Yaqi [School of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266042 (China); Meng, Alan, E-mail: alanmengqust@163.com [School of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, Shandong Province 266042 (China); Li, Qingdang [School of Sino-German Science and Technology, Qingdao University of Science and Technology, Qingdao 266061, China (China)

    2016-11-15

    Herein, bamboo-like 3C-SiC nanowires have been successfully fabricated on homogeneous 6H-SiC substrate by a simple chemical vapor reaction (CVR) approach. The obtained 3C-SiC nanostructure with periodical fluctuating diameter, is composed of two alternating structure units, the typical normal-sized stem segment with perfect crystallinity and obvious projecting nodes segment having high-density stacking faults. The formation of the interesting morphology is significantly subjected to the peculiar growth condition provided by the homogeneous substrate as well as the varying growth elastic energy. Furthermore, the photoluminescence (PL) performance measured on the bamboo-like SiC nanowire shows an intensive emission peaks centered at 451 nm and 467 nm, which has been expected to make a positive progress toward the optical application of the SiC-based one-dimensional (1D) nanostructures, such as light emission diode (LED). - Graphical abstract: Based on the synergistic growth mechanism from homogeneous substrate and elastic energy, bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. The blue-violet light emission properties of the bamboo-like nanowires have also been investigated for exploring their peculiar optical application. - Highlights: • Bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. • A synergistic growth mechanism from homogeneous substrate and elastic energy has been proposed firstly. • The blue-violet light emission properties of the products displayed peculiar optical application.

  6. Bamboo-like 3C-SiC nanowires with periodical fluctuating diameter: Homogeneous synthesis, synergistic growth mechanism, and their luminescence properties

    International Nuclear Information System (INIS)

    Zhang, Meng; Zhao, Jian; Li, Zhenjiang; Yu, Hongyuan; Wang, Yaqi; Meng, Alan; Li, Qingdang

    2016-01-01

    Herein, bamboo-like 3C-SiC nanowires have been successfully fabricated on homogeneous 6H-SiC substrate by a simple chemical vapor reaction (CVR) approach. The obtained 3C-SiC nanostructure with periodical fluctuating diameter, is composed of two alternating structure units, the typical normal-sized stem segment with perfect crystallinity and obvious projecting nodes segment having high-density stacking faults. The formation of the interesting morphology is significantly subjected to the peculiar growth condition provided by the homogeneous substrate as well as the varying growth elastic energy. Furthermore, the photoluminescence (PL) performance measured on the bamboo-like SiC nanowire shows an intensive emission peaks centered at 451 nm and 467 nm, which has been expected to make a positive progress toward the optical application of the SiC-based one-dimensional (1D) nanostructures, such as light emission diode (LED). - Graphical abstract: Based on the synergistic growth mechanism from homogeneous substrate and elastic energy, bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. The blue-violet light emission properties of the bamboo-like nanowires have also been investigated for exploring their peculiar optical application. - Highlights: • Bamboo-like 3C-SiC nanowires with periodically fluctuating diameter have been synthesized on 6H-SiC. • A synergistic growth mechanism from homogeneous substrate and elastic energy has been proposed firstly. • The blue-violet light emission properties of the products displayed peculiar optical application.

  7. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni{sub 2}Si formation and the resulting barrier height changes

    Energy Technology Data Exchange (ETDEWEB)

    Tengeler, Sven, E-mail: stengeler@surface.tu-darmstadt.de [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Kaiser, Bernhard [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Chaussende, Didier [Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Jaegermann, Wolfram [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2017-04-01

    Highlights: • Schottky behavior (Φ{sub B} = 0.41 eV) and Fermi level pining were found pre annealing. • Ni{sub 2}Si formation was confirmed for 5 min at 850 °C. • 3C/Ni{sub 2}Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni{sub 2}Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni{sub 2}Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  8. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni_2Si formation and the resulting barrier height changes

    International Nuclear Information System (INIS)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-01-01

    Highlights: • Schottky behavior (Φ_B = 0.41 eV) and Fermi level pining were found pre annealing. • Ni_2Si formation was confirmed for 5 min at 850 °C. • 3C/Ni_2Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni_2Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni_2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  9. Preparation of anti-oxidative SiC/SiO2 coating on carbon fibers from vinyltriethoxysilane by sol–gel method

    International Nuclear Information System (INIS)

    Xia Kedong; Lu Chunxiang; Yang Yu

    2013-01-01

    Highlights: ► The SiC/SiO 2 coating was prepared on carbon fibers by the sol–gel method. ► Nano-crystallites with an average diameter of 130 nm were aligned along the fiber axis uniformly. ► The oxidation resistant property of coated carbon fiber was increased with the increase of sol concentration and the heat treatment temperature. ► The oxidation activation energy of the coated carbon fiber was increased by 23% in comparison with uncoated carbon fiber. - Abstract: The anti-oxidative SiC/SiO 2 coating was prepared on carbon fibers by a sol–gel process using vinyltriethoxysilane (VTES) as the single source precursor. The derived coating was characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The oxidation resistant properties of the carbon fiber with and without coating were studied by isothermal oxidation. The results indicated that the carbothermal reduction reaction led to the decrease of SiO 2 phase and the increase of SiC phase at 1500 °C. The uniform SiC/SiO 2 coating prepared from a sol concentration of 4 wt% and heat treated at 1500 °C showed the optimal oxidation resistant property. The oxidation resistance of the carbon fiber was improved by the SiC/SiO 2 coating, and the oxidation activation energy was increased by about 23% as compared with uncoated carbon fiber.

  10. Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.

    Science.gov (United States)

    Zheng, Fan; Pham, Hieu H; Wang, Lin-Wang

    2017-12-13

    The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2 ) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2 , was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

  11. Professional Android Programming with Mono for Android and NETC#

    CERN Document Server

    McClure, Wallace B; Croft, John J; Dick, Jonathan; Hardy, Chris

    2012-01-01

    A one-of-a-kind book on Android application development with Mono for Android The wait is over! For the millions of .NET/C# developers who have been eagerly awaiting the book that will guide them through the white-hot field of Android application programming, this is the book. As the first guide to focus on Mono for Android, this must-have resource dives into writing applications against Mono with C# and compiling executables that run on the Android family of devices. Putting the proven Wrox Professional format into practice, the authors provide you with the knowledge you need to become a succ

  12. MONO FOR CROSS-PLATFORM CONTROL SYSTEM ENVIRONMENT

    International Nuclear Information System (INIS)

    Nishimura, Hiroshi; Timossi, Chris

    2006-01-01

    Mono is an independent implementation of the .NET Framework by Novell that runs on multiple operating systems (including Windows, Linux and Macintosh) and allows any .NET compatible application to run unmodified. For instance Mono can run programs with graphical user interfaces (GUI) developed with the C(number s ign) language on Windows with Visual Studio (a full port of WinForm for Mono is in progress). We present the results of tests we performed to evaluate the portability of our controls system .NET applications from MS Windows to Linux

  13. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Maslova, O. [Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Miusskaya sq., 4, Moscow 125047 (Russian Federation); GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P. [GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)

    2015-09-21

    We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

  14. Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

    Science.gov (United States)

    Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

    2017-03-01

    GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

  15. Evaluation of damage accumulation behavior and strength anisotropy of NITE SiC/SiC composites by acoustic emission, digital image correlation and electrical resistivity monitoring

    International Nuclear Information System (INIS)

    Nozawa, Takashi; Ozawa, Kazumi; Asakura, Yuuki; Kohyama, Akira; Tanigawa, Hiroyasu

    2014-01-01

    Understanding the cracking process of the composites is essential to establish the design basis for practical applications. This study aims to investigate the damage accumulation process and its anisotropy for nano-infiltration transient eutectic sintered (NITE) SiC/SiC composites by various characterization techniques such as the acoustic emission (AE), digital image correlation (DIC) and electrical resistivity (ER) measurements. Cracking behavior below the proportional limit stress (PLS) was specifically addressed. Similar to the other generic SiC/SiC composites, the 1st AE event was identified below the PLS for NITE SiC/SiC composites with a dependency of fabric orientation. The DIC results support that the primary failure mode depending on fiber orientation affected more than the other minor modes did. Detailed AE waveform analysis by wavelet shows a potential to classify the failure behavior depending on architecture. Cracking below the PLS is a potential concern in component deign but the preliminary ER measurements imply that the impact of cracking below the PLS on composite function was limited

  16. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

    2016-09-15

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  17. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    International Nuclear Information System (INIS)

    Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

    2016-01-01

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  18. Characterization of modified SiC@SiO2 nanocables/MnO2 and their potential application as hybrid electrodes for supercapacitors.

    Science.gov (United States)

    Zhang, Yujie; Chen, Junhong; Fan, Huili; Chou, Kuo-Chih; Hou, Xinmei

    2015-12-14

    In this research, we demonstrate a simple route for preparing SiC@SiO2 core-shell nanocables and furthermore obtain SiC@SiO2 nanocables/MnO2 as hybrid electrodes for supercapacitors using various modified methods. The modified procedure consists of mild modifications using sodium hydroxide as well as UV light irradiation and deposition of MnO2. The morphology and microstructural characteristics of the composites are investigated using XRD, XPS, FE-SEM with EDS and TEM. The results indicate that the surfaces of modified SiC@SiO2 nanocables are uniformly coated with a MnO2 thin layer. The electrochemical behaviors of the hybrid electrodes are systematically measured in a three-electrode system using cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy. The resultant electrode presents a superb charge storage characteristic with a large specific capacitance of 276.3 F g(-1) at the current density of 0.2 A g(-1). Moreover, the hybrid electrode also displays a long cycle life with a good capacitance retention (∼92.0%) after 1000 CV cycles, exhibiting a promising potential for supercapacitors.

  19. The silicon neighborhood across the a-Si:H to {mu}c-Si transition by X-ray absorption spectroscopy (XAS)

    Energy Technology Data Exchange (ETDEWEB)

    Tessler, Leandro R.; Wang Qi; Branz, Howard M

    2003-04-22

    We report a synchrotron X-ray absorption spectroscopy study of the average neighborhood of Si near the transition from a-Si:H to {mu}c-Si on wedge-shaped samples prepared by hot-wire CVD in a chamber using a movable shutter. The thickness of the wedge varies from 30 to 160 nm. Nucleation of {mu}c-Si occurs at a critical thickness of approximately 100 nm. X-Ray absorption was measured at the Si K-edge (1.84 keV) by total electron photoemission yield. The absorption oscillations in the EXAFS region are very similar to all along the wedge. Analysis indicates an average tetrahedral first neighbor shell with radial disorder decreasing with crystallization. In the near-edge (XANES) region multiple scattering effects appear at the onset of crystallinity. Unlike single crystal silicon, these effects involve only double scattering within the first neighbor shell, indicating an ill-formed second shell in {mu}c-Si.

  20. InSitu SEM Investigation of Microstructural Damage Evolution and Strain Relaxation in a Melt Infiltrated SiC/SiC Composite

    Science.gov (United States)

    Sevener, Kathy; Chen, Zhe; Daly, Sam; Tracy, Jared; Kiser, Doug

    2016-01-01

    With CMC components poised to complete flight certification in turbine engines on commercial aircraft within the near future, there are many efforts within the aerospace community to model the mechanical and environmental degradation of CMCs. Direct observations of damage evolution are needed to support these modeling efforts and provide quantitative measures of damage parameters used in the various models. This study was performed to characterize the damage evolution during tensile loading of a melt infiltrated (MI) silicon carbide reinforced silicon carbide (SiC/SiC) composite. A SiC/SiC tensile coupon was loaded to a maximum global stress of 30 ksi in a tensile fixture within an SEM while observations were made at 5 ksi increments. Both traditional image analysis and DIC (digital image correlation) were used to quantify damage evolution. With the DIC analysis, microscale damage was observed at the fiber-matrix interfaces at stresses as low as 5 ksi. First matrix cracking took place between 20 and 25 ksi, accompanied by an observable relaxation in strain near matrix cracks. Matrix crack opening measurements at the maximum load ranged from 200 nm to 1.5 m. Crack opening along the fiber-matrix interface was also characterized as a function of load and angular position relative to the loading axis. This characterization was funded by NASA GRC and was performed to support NASA GRC modeling of SiC/SiC environmental degradation

  1. Fabrication of a bionic microstructure on a C/SiC brake lining surface: Positive applications of surface defects for surface wetting control

    Science.gov (United States)

    Wu, M. L.; Ren, C. Z.; Xu, H. Z.; Zhou, C. L.

    2018-05-01

    The material removal processes generate interesting surface topographies, unfortunately, that was usually considered to be surface defects. To date, little attention has been devoted to the positive applications of these interesting surface defects resulted from laser ablation to improve C/SiC surface wettability. In this study, the formation mechanism behind surface defects (residual particles) is discussed first. The results showed that the residual particles with various diameters experienced regeneration and migration, causing them to accumulate repeatedly. The effective accumulation of these residual particles with various diameters provides a new method about fabricating bionic microstructures for surface wetting control. The negligible influence of ablation processes on the chemical component of the subsurface was studied by comparing the C-O-Si weight percentage at the C/SiC subsurface. A group of microstructures were fabricated under different laser trace and different laser parameters. Surface wettability experimental results for different types of microstructures were compared. The results showed that the surface wettability increased as the laser scanning speed decreased. The surface wettability increased with the density of the laser scanning trace. We also demonstrated the application of optimized combination of laser parameters and laser trace to simulate a lotus leaf's microstructure on C/SiC surfaces. The parameter selection depends on the specific material properties.

  2. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang, E-mail: zanghang@xjtu.edu.cn [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weilin, E-mail: weilin.jiang@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Liu, Wenbo [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Li, Tao; He, Chaohui; Yun, Di [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Zhiguang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-12-15

    Highlights: • He and Kr cavities are formed in ion-implanted and 1600 °C annealed 3C-SiC. • A higher vacancy concentration leads to formation of cavities with a smaller size and higher density. • Presence of He in irradiated 3C-SiC can significantly promote cavity growth. • Small voids are formed in Kr ion penetrated 3C-SiC during thermal annealing at 1600 °C. • Local Kr migration and trapping at cavities in SiC are observed, but long-range Kr diffusion does not occur at 1600 °C. - Abstract: Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 °C with 120 keV He{sup 2+} and 4 MeV Kr{sup 15+} ions to 10{sup 17} and 4 × 10{sup 16} cm{sup −2}, respectively. The Kr{sup 15+} ions penetrated the entire depth region of the He{sup 2+} ion implantation. Three areas of He{sup 2+}, Kr{sup 15+} and He{sup 2+} + Kr{sup 15+} ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 °C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He{sup 2+} ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr{sup 15+} ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 °C.

  3. Dark matter searches with a mono-Z′ jet

    International Nuclear Information System (INIS)

    Bai, Yang; Bourbeau, James; Lin, Tongyan

    2015-01-01

    We study collider signatures of a class of dark matter models with a GeV-scale dark Z ′ . At hadron colliders, the production of dark matter particles naturally leads to associated production of the Z ′ , which can appear as a narrow jet after it decays hadronically. Contrary to the usual mono-jet signal from initial state radiation, the final state radiation of dark matter can generate the signature of a mono-Z ′ jet plus missing transverse energy. Performing a jet-substructure analysis to tag the Z ′ jet, we show that these Z ′ jets can be distinguished from QCD jets at high significance. Compared to mono-jets, a dedicated search for mono-Z ′ jet events can lead to over an order of magnitude stronger bounds on the interpreted dark matter-nucleon scattering cross sections.

  4. New mono-organotin (IV) dithiocarbamate complexes

    International Nuclear Information System (INIS)

    Muthalib, Amirah Faizah Abdul; Baba, Ibrahim

    2014-01-01

    Eighteen new mono-organotin dithiocarbamate compounds derived each nine from methyltin(IV) and phenyltin(IV) reacted using in-situ method with various type of N-dialkylamine together with carbon disulphide with the ratio of 1:3:3. Elemental and gravimetric analysis showed that the general formula of these compounds were RSnCl[S 2 CNR′R″] 2 (R= Ph, CH 3 , R′ = CH 3 , C 2 H 5 , C 7 H 7 and R″ = C 2 H 5 , C 6 H 11 , iC 3 H 7 , C 7 H 7 ). These compounds had been characterized by infrared spectroscopy, ultraviolet spectroscopy, 1 H, 13 C NMR spectroscopy and single crystal X-ray crystallography. The infrared spectra of these compounds showed three important peaks indicating the formation of dithiocarbamate compounds, ν(C N), ν(C S) and ν(Sn-S) band which present in the region of 1444–1519, 954–1098 and 318–349 cm −1 respectively. The ultraviolet-visible spectra showed an absorption band for the π - π* transition of N C S group in the range of 253 – 259 nm due to the intramolecular charge transfer of the ligand. The 13 C NMR spectra showed an important shift for δ(N 13 CS 2 ) in the range of 196.8 – 201.9 ppm.. Single crystal X-ray diffraction studies showed three new structures with the general formula of PhSnCl[S 2 CN(Et)(i−Pr)] 2 , MeSnCl[S 2 CN(Me)(Cy)] 2 and MeSnCl[S 2 CN(i−Pr)(CH 2 Ph)] 2 . All structures having a distorted octahedral geometry set by CClS 4 donor atom from the two chelating dithiocarbamate ligands

  5. Searching for Dark Matter in the Mono-Jet and Mono-Photon Channels with the ATLAS Detector

    CERN Document Server

    Ratti, Maria Giulia; Carminati, Leonardo

    This work presents searches for dark matter particles in the mono-jet and mono-photon final states using the data collected by the ATLAS experiment during 2015 and 2016. The thesis starts with an introduction to the basic concepts of the Standard Model, followed by a discussion of the dark matter problem and the WIMP hypothesis. The focus then shifts to the description of the experimental facilities to collect the data and reconstruct the collision events. Particular focus is put on the reconstruction and performance of the missing transverse momentum. After characterizing a few theoretical models predicting dark matter particles in the mono-photon and mono-jet final states, the searches in these two signatures are thoroughly discussed, with particular focus on the background estimation techniques. While no significant deviations from the Standard Model predictions are found, the results obtained by these searches further restrict the phase-space where the dark matter particles can lie.

  6. Rotavirus infection in children: mono-and combines forms, especially clinics and course

    Directory of Open Access Journals (Sweden)

    N. B. Denisyuk

    2012-01-01

    Full Text Available Analyzed 74 case histories of children under one year with rotavirus infection. The most commonly detected rotavirus gastroenteritis in the form of mono-and combined forms. Mono-infection in 78.3% of cases occurred in the moderate form with a leading syndrome in the form of gastroenteritis, severe dehydration proceeded with symptoms of varying severity. Mixed variants in 98.7% of cases are in the unfavorable premorbid background, in 42.8% of children were registered in the severe forms, and children younger than 6 months were erased within. The diagnosis of intestinal infection was confirmed by PCR, bacteriological and immunological methods.

  7. New mono-organotin (IV) dithiocarbamate complexes

    Energy Technology Data Exchange (ETDEWEB)

    Muthalib, Amirah Faizah Abdul; Baba, Ibrahim [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi (Malaysia)

    2014-09-03

    Eighteen new mono-organotin dithiocarbamate compounds derived each nine from methyltin(IV) and phenyltin(IV) reacted using in-situ method with various type of N-dialkylamine together with carbon disulphide with the ratio of 1:3:3. Elemental and gravimetric analysis showed that the general formula of these compounds were RSnCl[S{sub 2}CNR′R″]{sub 2} (R= Ph, CH{sub 3}, R′ = CH{sub 3}, C{sub 2}H{sub 5}, C{sub 7}H{sub 7} and R″ = C{sub 2}H{sub 5}, C{sub 6}H{sub 11}, iC{sub 3}H{sub 7}, C{sub 7}H{sub 7}). These compounds had been characterized by infrared spectroscopy, ultraviolet spectroscopy, {sup 1}H, {sup 13}C NMR spectroscopy and single crystal X-ray crystallography. The infrared spectra of these compounds showed three important peaks indicating the formation of dithiocarbamate compounds, ν(CN), ν(CS) and ν(Sn-S) band which present in the region of 1444–1519, 954–1098 and 318–349 cm{sup −1} respectively. The ultraviolet-visible spectra showed an absorption band for the π - π* transition of NCS group in the range of 253 – 259 nm due to the intramolecular charge transfer of the ligand. The {sup 13}C NMR spectra showed an important shift for δ(N{sup 13}CS{sub 2}) in the range of 196.8 – 201.9 ppm.. Single crystal X-ray diffraction studies showed three new structures with the general formula of PhSnCl[S{sub 2}CN(Et)(i−Pr)]{sub 2}, MeSnCl[S{sub 2}CN(Me)(Cy)]{sub 2} and MeSnCl[S{sub 2}CN(i−Pr)(CH{sub 2}Ph)]{sub 2}. All structures having a distorted octahedral geometry set by CClS{sub 4} donor atom from the two

  8. Dust Generation Resulting from Desiccation of Playa Systems: Studies on Mono and Owens Lakes, California

    Science.gov (United States)

    Gill, Thomas Edward

    1995-01-01

    Playas, evaporites, and aeolian sediments frequently are linked components within the Earth system. Anthropogenic water diversions from terminal lakes form playas that release fugitive dust. These actions, documented worldwide, simulate aeolian processes activated during palaeoclimatic pluvial/interpluvial transitions, and have significant environmental impacts. Pluvial lakes Russell and Owens in North America's Great Basin preceded historic Mono and Owens Lakes, now desiccated by water diversions into dust-generating, evaporite -encrusted playas. Geochemical and hydrologic cycles acting on the Owens (Dry) Lake playa form three distinct crust types each year. Although initial dust production results from deflation of surface efflorescences after the playa dries, most aerosols are created by saltation abrasion of salt/silt/clay crusts at crust/ sand sheet contacts. The warm-season, clastic "cemented" crust is slowest to degrade into dust. If the playa surface is stabilized by an unbroken, non-efflorescent crust, dust formation is discouraged. When Mono Lake's surFace elevation does not exceed 1951 meters (6400 feet), similar processes will also generate dust from its saline lower playa. Six factors--related to wind, topography, groundwater, and sediments--control dust formation at both playas. These factors were combined into a statistical model relating suspended dust concentrations to playa/lake morphometry. The model shows the extent and severity of Mono Lake dust storms expands significantly below the surface level 6376 feet (1943.5 meters). X-ray diffraction analysis of Mono Basin soils, playa sediments, and aerosols demonstrates geochemical cycling of materials through land, air and water during Mono Lake's 1982 low stand. Soils and clastic playa sediments contain silicate minerals and tephra. Saline groundwater deposited calcite, halite, thenardite, gaylussite, burkeite and glauberite onto the lower playa. Aerosols contained silicate minerals (especially

  9. Influence of N-type μc-SiOx:H intermediate reflector and top cell material properties on the electrical performance of "micromorph" tandem solar cells

    Science.gov (United States)

    Chatterjee, P.; Roca i Cabarrocas, P.

    2018-01-01

    Amorphous silicon (a-Si:H) / micro-crystalline silicon (μc-Si:H), "micromorph" tandem solar cells have been investigated using a detailed electrical - optical model. Although such a tandem has good light absorption over the entire visible spectrum, the a-Si:H top cell suffers from strong light-induced degradation (LID). To improve matters, we have replaced a-Si:H by hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film with lower LID than a-Si:H. But the latter's low current carrying capacity necessitates a thicker top cell for current-matching, again leading to LID problems. The solution is to introduce a suitable intermediate reflector (IR) at the junction between the sub-cells, to concentrate light of the shorter visible wavelengths into the top cell. Here we assess the suitability of N-type micro-crystalline silicon oxide (μc-SiOx:H) as an IR. The sensitivity of the solar cell performance to the complex refractive index, thickness and texture of such a reflector is studied. We conclude that N-μc-SiOx:H does concentrate light into the top sub-cell, thus reducing its required thickness for current-matching. However the IR also reflects light right out of the device; so that the initial efficiency suffers. The advantage of such an IR is ultimately seen in the stabilized state since the LID of a thin top cell is low. We also find that for high stabilized efficiencies, the IR should be flat (having no texture of its own). Our study indicates that we may expect to reach 15% stable tandem micromorph efficiency.

  10. Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

    2000-01-01

    An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

  11. Self-construing in children with primary mono-symptomatic nocturnal enuresis--an investigation of three measures.

    Science.gov (United States)

    Robinson, Joanne C; Butler, Richard J; Holland, Philip; Doherty-Williams, Dianne

    2003-01-01

    This study aims to measure different aspects of self-construing in children with primary mono-symptomatic nocturnal enuresis. 25 children aged 7-14 years, with nocturnal enuresis were recruited from a paediatric outpatient's unit specialising in enuresis [mean age 10.6 [males], 9.39 [females

  12. Enhanced stability of magic clusters: A case study of icosahedric Al12X, X=B, Al, Ga, C, Si, Ge, Ti, As

    International Nuclear Information System (INIS)

    Gong, X.G.; Kumar, V.

    1992-10-01

    We present results of the electronic structure and stability of some 40 valence electron icosahedric Al 12 X (X=B, Al, Ga, C, Si, Ge, Ti and As) clusters within the local spin density functional theory. It is shown that the stability of Al 13 cluster can be substantially enhanced by proper doping. For neutral clusters, substitution of C at the center of the icosahedron leads to the largest gain in energy. However, Al 12 B - is the most bounded in this family. These results are in agreement with the recent experiments which also find Al 12 B - to be highly abundant. (author). 12 refs, 4 figs, 2 tabs

  13. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  14. H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

    2017-02-28

    Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

  15. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  16. Property Evaluation and Damage Evolution of Environmental Barrier Coatings and Environmental Barrier Coated SiC/SiC Ceramic Matrix Composite Sub-Elements

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael; Jaskowiak, Martha; Hurst, Janet; Bhatt, Ram; Fox, Dennis S.

    2014-01-01

    This paper describes recent development of environmental barrier coatings on SiC/SiC ceramic matrix composites. The creep and fatigue behavior at aggressive long-term high temperature conditions have been evaluated and highlighted. Thermal conductivity and high thermal gradient cyclic durability of environmental barrier coatings have been evaluated. The damage accumulation and complex stress-strain behavior environmental barrier coatings on SiCSiC ceramic matrix composite turbine airfoil subelements during the thermal cyclic and fatigue testing of have been also reported.

  17. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  18. Intra-articular osteoid osteoma as a differential diagnosis of diffuse mono-articular joint pain.

    Science.gov (United States)

    Rolvien, Tim; Zustin, Jozef; Mussawy, Haider; Schmidt, Tobias; Pogoda, Pia; Ueblacker, Peter

    2016-11-04

    The aim of this retrospective study was to investigate the frequency of intra-articular osteoid osteoma (iaOO) in a large study cohort and to demonstrate its clinical relevance as an important differential diagnosis of non-specific mono-articular joint pain. We searched the registry for bone tumours of the University Medical Centre Hamburg-Eppendorf for osteoid osteomas in the last 42 years. Herein, we present three selected iaOO which were detected in the three major weight-bearing joints. Computed tomography (CT) or magnetic resonance imaging (MRI) scans were performed for initial diagnosis. Out of a total of 367 osteoid osteomas, 19 (5.2 %) tumours were localized intra-articularly. In all three presented tumours, a history of severe mono-articular pain was reported; however, the mean time to correct diagnosis was delayed to 20.7 months. Clearly, the nidus seen in CT and MRI images in combination with inconsistent salicylate-responsive nocturnal pain led to the diagnosis of iaOO. Rarely, osteoid osteoma can occur in an intra-articular location. In cases of diffuse mono-articular pain, iaOO should be considered both in large and smaller joints to avoid delays in diagnosis and therapy of this benign bone tumour.

  19. Anaerobic mono-digestion of lucerne, grass and forbs – Influence of species and cutting frequency

    DEFF Research Database (Denmark)

    Wahid, Radziah; Feng, Lu; Cong, Wenfeng

    2018-01-01

    but it was not possible to ascertain whether this was due to organic overload alone or if high ammonia levels during Lu-4 digestion were contributing to the reduced performance. It was found that four cuts per year was suitable for a lab-scale mono-digestion system as the substrate was less fibrous and has lower dry......In the present study, biogas potentials of multispecies swards including grass, lucerne, caraway, ribwort plantain and chicory from two- and four-cut regimes (Mix-2 and Mix-4) for mono-digestion applying batch and continuous modes under lab-scale conditions were investigated. The gas yields...... confirmed with continuous experiments, during which the reactor digesting Mix-4 was stable throughout the experiment with low ammonia and volatile fatty acid (VFA) concentration. Meanwhile, mono-digestion of Lu-4 led to elevated VFA levels, even at a comparatively low organic loading rate of 1.76 g L−1 d−1...

  20. [Improvement of symptoms in mild hyperthyroidism with an extract of Lycopus europaeus (Thyreogutt® mono)].

    Science.gov (United States)

    Eiling, Rudolf; Wieland, Veronika; Niestroj, Michael

    2013-02-01

    Extracts of Lycopus europaeus are used clinically for the control of vegetative and irritative symptoms in mild hyperthyroidism. This study assessed the effects and safety of an extract of Lycopus europaeus (Thyreogutt® mono tablets or drops) in a general practice setting. The study was conducted as an open post-marketing surveillance study consisting of three cohorts, i.e. a prolective assessment in patients receiving Thyreogutt® mono for 4 weeks, a retrolective documentation of data from patients who had received at least one course (4 weeks) of Thyreogutt® mono therapy during the previous 2 years, and a control cohort receiving no drug treatment. Assessments comprised symptoms of mild hyperthyroidism, laboratory tests of thyroid function and adverse events surveillance. Response was defined as normal thyroid hormone values at the end of therapy or a reduction of at least 20% in the number of symptoms after treatment. Responder rates were calculated. Four hundred and three patients with mild symptomatic hyperthyroidism were observed. The prolective assessment included 146 patients, the retrolective assessment 171 patients, and the control cohort 86 untreated patients. The responder rate was 72.6% in the prolective assessment and 96.5% in the retrolective assessment whereas the responder rate in the untreated control cohort amounted to 41.2%. No adverse events were reported. The extract of Lycopus europaeus was well tolerated and associated with a statistically significant and clinically relevant improvement of the symptoms in mild hyperthyroidism. The improvement was markedly better in both Thyreogutt® mono cohorts than in the control cohort.

  1. Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

    Science.gov (United States)

    Xue, Muyu; Islam, Raisul; Meng, Andrew C; Lyu, Zheng; Lu, Ching-Ying; Tae, Christian; Braun, Michael R; Zang, Kai; McIntyre, Paul C; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

    2017-12-06

    In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an ∼13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 μm is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiO x ) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiO x ), a well-known material for an electron-selective contact interlayer. Key parameters including V oc and J sc also show different degrees of enhancement if single (NiO x only) or double (both NiO x and TiO x ) carrier-selective contacts are integrated. The fabrication process for TiO x and NiO x layer integration is scalable and shows good compatibility with the device.

  2. Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He+ and O+ ion beam defect engineering

    International Nuclear Information System (INIS)

    Häberlen, M.; Murphy, B.; Stritzker, B.; Lindner, J.K.N.

    2012-01-01

    In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam synthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting of nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing yields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.

  3. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

    Science.gov (United States)

    Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

    2016-12-01

    Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

  4. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  5. Atomic oxygen adsorption and its effect on the oxidation behaviour of ZrB2-ZrC-SiC in air

    International Nuclear Information System (INIS)

    Gao Dong; Zhang Yue; Xu Chunlai; Song Yang; Shi Xiaobin

    2011-01-01

    Research highlights: → Atomic oxygen was adsorbed on the surface of ZrB 2 -ZrC-SiC ceramics. → Atomic oxygen was preferred reacted with borides according to XPS spectra. → The atomic oxygen adsorption is detrimental to the oxidation resistance. → The porosity should be the major reason which provides diffusion path for the atomic oxygen. → The structure evolution of the ceramics during oxidation is analyzed. - Abstract: Atomic oxygen is adsorbed on the surface of the hot-pressed ZrB 2 -ZrC-SiC ceramic composites, and then the ceramic composites are oxidized in air up to 1500 deg. C with the purpose of clarifying the effect of atomic oxygen adsorption on the oxidation behaviour of the ceramic composites. The XPS spectra are employed to identify the adsorption mechanism of atomic oxygen on the surface of the ceramic composites, and the formation of O-B, O-Zr, and O-Si bonds indicates that atomic oxygen is chemically adsorbed on the surface of the ceramic. In addition, atomic oxygen is preferred to be adsorbed on the surface of borides according to the Zr 3d core level spectrum. On the other hand, the atomic oxygen adsorption is detrimental to the oxidation resistance according to experimental results, and the porosity of the ceramic should be the major reason which provides diffusion path for the atomic oxygen. Furthermore, the structure evolution of the ceramic composites during oxidation process is analyzed.

  6. Single fiber push-out characterization of interfacial mechanical properties in unidirectional CVI-C/SiC composites by the nano-indentation technique

    Science.gov (United States)

    Zhang, Lifeng; Ren, Chengzu; Zhou, Changling; Xu, Hongzhao; Jin, Xinmin

    2015-12-01

    The characterization of interfaces in woven ceramic matrix composites is one of the most challenging problems in composite application. In this investigation, a new model material consisting of the chemical vapor infiltration unidirectional C/SiC composites with PyC fiber coating were prepared and evaluated to predict the interfacial mechanic properties of woven composites. Single fiber push-out/push-back tests with the Berkovich indenter were conducted on the thin sliced specimens using nano-indentation technique. To give a detailed illustration of the interfacial crack propagation and failure mechanism, each sector during the push-out process was analyzed at length. The test results show that there is no detectable difference between testing a fiber in a direct vicinity to an already tested fiber and testing a fiber in vicinity to not-pushed fibers. Moreover, the interface debonding and fiber sliding mainly occur at the PyC coating, and both the fiber and surrounding matrix have no plastic deformation throughout the process. Obtained from the load-displacement curve, the interfacial debonding strength (IDS) and friction stress (IFS) amount to, respectively, 35 ± 5 MPa and 10 ± 1 MPa. Based on the findings, the interfacial properties with PyC fiber coating can be predicted. Furthermore, it is expected to provide a useful guideline for the design, evaluation and optimal application of CVI-C/SiC.

  7. Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, Steven S. [Univ. of Delaware, Newark, DE (United States)

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  8. Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, Steven S. [Univ. of Delaware, Newark, DE (United States)

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  9. Production of mono sugar from acid hydrolysis of seaweed | Jang ...

    African Journals Online (AJOL)

    ... the process conditions for the saccharification of macroalgae (seaweed) into mono sugar using the following parameters such as: Amount of biomass, catalyst concentration, temperature and reaction time. The major component of Ulva pertusa (green seaweed), Laminaria japonica (brown seaweed) and Gelidium amansii ...

  10. Mono- and binuclear complexes of low-valent zirconium

    NARCIS (Netherlands)

    Wielstra, IJtsen

    1990-01-01

    This thesis is a study on the synthesis and reactivity of low-valent zirconium. The investigation can be divided in two parts: the first describes the chemistry of mono-cyclopentadienyl Zr (II) complexes (Chapter II, III and IV), and the second describes some synthetic pathways successfully used for

  11. Cost-Effective Mass Production of Mono Bucket Foundations

    DEFF Research Database (Denmark)

    Gres, Szymon; Nielsen, Søren Andreas; Fejerskov, Morten

    2015-01-01

    for innovative and cost-effective design of Mono Bucket foundations. Established approach merges wind and wave load models, soil/structure interaction topics, structural optimization and installation/fabrication aspects, into software package with ability to perform optimal design of the individual foundations...

  12. Air quality in bedded mono-slope beef barns

    Science.gov (United States)

    Bedded mono-slope barns are becoming more common in the upper Midwest. Because these are new facilities, little research has been published regarding environmental quality, building management and animal performance in these facilities. A team of researchers from South Dakota State University, USDA ...

  13. Mono-fermentation of shea waste in anaerobic digesters - laboratory ...

    African Journals Online (AJOL)

    For the purpose of understanding the characteristics in performance of the shea waste and to provide the necessary input parameters towards the design of biogas plants, mono-fermentation as an option in anaerobic digestion for energy (methane) generation was investigated. Six horizontal reactors with a liquid volume of ...

  14. Materiales compuestos C/SiC para aplicaciones estructurales de alta temperatura. Parte I: estabilidad termodinámica y química

    Directory of Open Access Journals (Sweden)

    Aparicio, M.

    2000-12-01

    Full Text Available The development of aero-engine and aircraft industry is aimed to hypersonic technology, efficiency enhancements and pollutant emission reductions. This objective can only be reached by increasing the operating temperatures, utilising new materials which mechanical properties are retained up to high temperatures. SiC matrix composites reinforced with carbon fibres (C/SiC are good examples with very good bending and thermal shock resistance at temperatures up to 1600ºC as well as low density. However, the fact which currently inhibits the application of these materials is the high oxidation rate of carbon fibres at temperatures above 450ºC. In the first part of the paper, a review of the most important properties and oxidation mechanisms of C and SiC has been carried out. The influence of each material disposition, individually and as composite, has been analysed.

    El desarrollo de la industria aeroespacial se orienta actualmente hacia la tecnología hipersónica, el incremento en el rendimiento de las reacciones de combustión y la reducción de la emisión de contaminantes. Estos objetivos sólo pueden alcanzarse aumentando la temperatura de combustión, para lo cual es necesario desarrollar nuevos materiales que conserven sus propiedades mecánicas hasta temperaturas muy elevadas. Entre ellos se encuentran los materiales compuestos de matriz de SiC reforzada con fibra continua de carbono (C/SiC, cuyas propiedades más importantes son una elevada resistencia a flexión y al choque térmico desde temperatura ambiente hasta 1600ºCy su reducido peso específico. Sin embargo, el principal problema que acompaña a los materiales compuestos C/SiC es la elevada velocidad de oxidación de la fibra de carbono a partir de 450ºC. En la primera parte del trabajo se realiza una revisión de las características más relevantes del carbono y SiC, y de su comportamiento frente a la oxidación, tanto por separado como formando parte de materiales

  15. MonoMax Suture: A New Long-Term Absorbable Monofilament Suture Made from Poly-4-Hydroxybutyrate

    Directory of Open Access Journals (Sweden)

    Erich K. Odermatt

    2012-01-01

    Full Text Available A long-term absorbable monofilament suture was developed using poly-4-hydroxybutyrate (P4HB made from a biosynthetically produced homopolymer of the natural metabolite 4-hydroxybutyrate. The suture, called MonoMax, has prolonged strength retention. At 12 weeks, a size 3-0 MonoMax suture retains approximately 50% of its initial tensile strength in vivo and is substantially degraded in one year with minimal tissue reaction. In contrast, PDS II monofilament suture (Ethicon, Inc., Somerville, NJ has no residual strength in vivo after 12 weeks. In vivo, the MonoMax suture is hydrolyzed primarily by bulk hydrolysis, and is then degraded via the Krebs cycle. MonoMax is substantially more compliant than other monofilament sutures, and incorporates an element of elasticity. Its tensile modulus of 0.48 GPa is approximately one-third of the value of the PDS II fiber providing an exceptionally flexible and pliable fiber with excellent knot strength and security. These features are further enhanced by the fiber's elasticity, which also improves knot security and may help prevent wound dehiscence. Because of its performance advantages, this suture may find clinical utility in applications where prolonged strength retention, and greater flexibility are required, particularly in procedures like abdominal wall closure where wound dehiscence is still a significant post-surgical complication.

  16. Steady-state analytical model of suspended p-type 3C-SiC bridges under consideration of Joule heating

    Science.gov (United States)

    Balakrishnan, Vivekananthan; Dinh, Toan; Phan, Hoang-Phuong; Kozeki, Takahiro; Namazu, Takahiro; Viet Dao, Dzung; Nguyen, Nam-Trung

    2017-07-01

    This paper reports an analytical model and its validation for a released microscale heater made of 3C-SiC thin films. A model for the equivalent electrical and thermal parameters was developed for the two-layer multi-segment heat and electric conduction. The model is based on a 1D energy equation, which considers the temperature-dependent resistivity and allows for the prediction of voltage-current and power-current characteristics of the microheater. The steady-state analytical model was validated by experimental characterization. The results, in particular the nonlinearity caused by temperature dependency, are in good agreement. The low power consumption of the order of 0.18 mW at approximately 310 K indicates the potential use of the structure as thermal sensors in portable applications.

  17. Materiales compuestos C/SiC para aplicaciones estructurales de alta temperatura. Parte II: Sistemas de protección contra la oxidación

    Directory of Open Access Journals (Sweden)

    Aparicio, M.

    2001-02-01

    Full Text Available The fact which currently excludes the use of C/SiC composites in high temperature structural applications is the high oxidation rate of carbon fibres at temperatures higher than 450ºC. In this second part of the paper, a review of the different oxidation protection systems, including inhibitors, surface modification of composites, coatings and previous infiltration of the substrates, has been carried out. The addition of inhibitors reduces the oxidation rate, but only up to 850ºC, while the surface modification of composites leads to thin coatings with poor thermal shock resistance. On the other hand, the external layers are the most usual method employed because allows combining different compositions and thicknesses. The multilayer coatings are especially interesting in applications with wide temperature range and thermal shocks requirements. The infiltration of substrate porosity improves slightly the oxidation resistance of C/SiC composites reducing the oxygen accessibility to carbon fibres. However, the infiltration complements very well the oxidation protection performance of a coating system at low temperature, since these normally present open cracks due to mismatch between coating and substrate thermal expansion coefficients.

    La utilización de los materiales compuestos C/SiC en aplicaciones estructurales a alta temperatura está limitada por la elevada velocidad de oxidación de la fibra de carbono a temperaturas superiores de 450ºC. En esta segunda parte del trabajo se realiza una revisión de las posibilidades de protección contra la oxidación de estos materiales, incluyendo inhibidores, modificación superficial del material compuesto, recubrimientos e infiltración previa del sustrato. La eficacia de los inhibidores de la reacción de oxidación esta restringida a temperaturas de hasta 850ºC, mientras que la modificación superficial del material compuesto da lugar a capas delgadas y poco resistentes a los ciclos t

  18. First principles-based adsorption comparison of group IV elements (C, Si, Ge, and Sn) on Au(111)/Ag(111) surface

    International Nuclear Information System (INIS)

    Chakraborty, Sudip; Rajesh, Ch.

    2012-01-01

    We have reported a first-principle investigation of the structural properties of monomer and dimer for group IV elements (C, Si, Ge, and Sn) adsorbed on the Au(111) and Ag(111) surfaces. The calculations were performed by means of a plane wave based pseudopotential method under the framework of density functional theory. The results reveal the preference of adatom to be adsorbed on the hexagonal closed packed site of the metal (111) surfaces with strong binding energy. The structures introduce interlayer forces in the adsorbate. The strong bonding with the surface atoms is a result of p–d hybridization. The adsorption energy follows a sequence as one goes down in the group IV elements which imply that the interaction of the group IV elements with Au/Ag is decreasing as the atomic number increases.

  19. Comparison between experimental stiffness changes and crack-thickness-dependent predictions on a 1D SiC-SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Morvan, J.-M. [Bordeaux-1 Univ., 33 - Talence (France). Lab. de Mecanique Physique; Baste, S. [Bordeaux-1 Univ., 33 - Talence (France). Lab. de Mecanique Physique

    1997-08-01

    The use of an ultrasonic device gives access to all the stiffness coefficients of materials. With the analytical expressions of the effective compliances of an anisotropic solid containing a crack system, it is possible to predict the compliances variation along a monotonous loading, the cracks being considered as slit cracks. When the crack opening displacement is taken into account, that leads to a good agreement between experimental and predicted compliances. The non linear behaviour of the 1D SiC-SiC composite is then simply described by the constitutive laws of both the various crack densities and cracks opening displacement functions. Furthermore, the comparison between experimental and predicted stiffnesses changes gives access to the schematic geometry of the cracks systems. (orig.)

  20. Computer Aided Multi-scale Design of SiC-Si3N4 Nanoceramic Composites for High-Temperature Structural Applications

    Energy Technology Data Exchange (ETDEWEB)

    Vikas Tomer; John Renaud

    2010-08-31

    It is estimated that by using better and improved high temperature structural materials, the power generation efficiency of the power plants can be increased by 15% resulting in significant cost savings. One such promising material system for future high-temperature structural applications in power plants is Silicon Carbide-Silicon Nitride (SiC-Si{sub 3}N{sub 4}) nanoceramic matrix composites. The described research work focuses on multiscale simulation-based design of these SiC-Si{sub 3}N{sub 4} nanoceramic matrix composites. There were two primary objectives of the research: (1) Development of a multiscale simulation tool and corresponding multiscale analyses of the high-temperature creep and fracture resistance properties of the SiC-Si{sub 3}N{sub 4} nanocomposites at nano-, meso- and continuum length- and timescales; and (2) Development of a simulation-based robust design optimization methodology for application to the multiscale simulations to predict the range of the most suitable phase morphologies for the desired high-temperature properties of the SiC-Si{sub 3}N{sub 4} nanocomposites. The multiscale simulation tool is based on a combination of molecular dynamics (MD), cohesive finite element method (CFEM), and continuum level modeling for characterizing time-dependent material deformation behavior. The material simulation tool is incorporated in a variable fidelity model management based design optimization framework. Material modeling includes development of an experimental verification framework. Using material models based on multiscaling, it was found using molecular simulations that clustering of the SiC particles near Si{sub 3}N{sub 4} grain boundaries leads to significant nanocomposite strengthening and significant rise in fracture resistance. It was found that a control of grain boundary thicknesses by dispersing non-stoichiometric carbide or nitride phases can lead to reduction in strength however significant rise in fracture strength. The

  1. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    International Nuclear Information System (INIS)

    Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2008-01-01

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

  2. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2008-01-15

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

  3. Calcium-Magnesium-Alumino-Silicates (CMAS) Reaction Mechanisms and Resistance of Advanced Turbine Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Costa, Gustavo; Harder, Bryan J.; Wiesner, Valerie L.; Hurst, Janet B.; Puleo, Bernadette J.

    2017-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is an essential requirement to enable the applications of the 2700-3000 F EBC - CMC systems. This presentation primarily focuses on the reaction mechanisms of advanced NASA environmental barrier coating systems, when in contact with Calcium-Magnesium Alumino-Silicates (CMAS) at high temperatures. Advanced oxide-silicate defect cluster environmental barrier coatings are being designed for ultimate balanced controls of the EBC temperature capability and CMAS reactivity, thus improving the CMAS resistance. Further CMAS mitigation strategies are also discussed.

  4. Microstructure and mechanical properties of low-activation glass-ceramic joining and coating for SiC/SiC composites

    International Nuclear Information System (INIS)

    Katoh, Yutai; Kotani, M.; Kohyama, A.; Montorsi, M.; Salvo, M.; Ferraris, M.

    2000-01-01

    Calcia-alumina (CA) glass-ceramic was studied as a candidate low-activation joining and sealing material for SiC/SiC components for fusion blanket and diverter structures, in terms of microstructural stability and mechanical properties. The CA glass-ceramic joining and seal coating were applied to the Hi-Nicalon TM SiC fiber-reinforced SiC matrix composites in which the matrix had been formed through chemical vapor infiltration and polymer impregnation and pyrolysis methods. Microstructural characterization was carried out for the joined and coated materials by optical and scanning electron microscopy (SEM). The mechanical property of the joint was evaluated through a shear test on sandwich joints. The average shear strength of the joined structures was 28 MPa at room temperature. Fractography revealed that the fracture occurred in the glass phase and the shear strength may be improved by reduction of the glass fraction

  5. Creep, Fatigue and Fracture Behavior of Environmental Barrier Coating and SiC-SiC Ceramic Matrix Composite Systems: The Role of Environment Effects

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2015-01-01

    Advanced environmental barrier coating (EBC) systems for low emission SiCSiC CMC combustors and turbine airfoils have been developed to meet next generation engine emission and performance goals. This presentation will highlight the developments of NASAs current EBC system technologies for SiC-SiC ceramic matrix composite combustors and turbine airfoils, their performance evaluation and modeling progress towards improving the engine SiCSiC component temperature capability and long-term durability. Our emphasis has also been placed on the fundamental aspects of the EBC-CMC creep and fatigue behaviors, and their interactions with turbine engine oxidizing and moisture environments. The EBC-CMC environmental degradation and failure modes, under various simulated engine testing environments, in particular involving high heat flux, high pressure, high velocity combustion conditions, will be discussed aiming at quantifying the protective coating functions, performance and durability, and in conjunction with damage mechanics and fracture mechanics approaches.

  6. Modeling the Monotonic and Cyclic Tensile Stress-Strain Behavior of 2D and 2.5D Woven C/SiC Ceramic-Matrix Composites

    Science.gov (United States)

    Li, L. B.

    2018-05-01

    The deformation of 2D and 2.5 C/SiC woven ceramic-matrix composites (CMCs) in monotonic and cyclic loadings has been investigated. Statistical matrix multicracking and fiber failure models and the fracture mechanics interface debonding approach are used to determine the spacing of matrix cracks, the debonded length of interface, and the fraction of broken fibers. The effects of fiber volume fraction and fiber Weibull modulus on the damage evolution in the composites and on their tensile stress-strain curves are analyzed. When matrix multicracking and fiber/matrix interface debonding occur, the fiber slippage relative to the matrix in the debonded interface region of the 0° warp yarns is the main reason for the emergance of stress-strain hysteresis loops for 2D and 2.5D woven CMCs. A model of these loops is developed, and histeresis loops for the composites in cyclic loadings/unloadings are predicted.

  7. Substituent effects on mono-substituted and poly-substituted nitriles; Efeitos dos substituintes em nitrilas mono- e polissubstituidas

    Energy Technology Data Exchange (ETDEWEB)

    Sofia, Raquel C.R.; Carneiro, Paulo I.B.; Rittner, Roberto [Universidade Estadual de Campinas, SP (Brazil). Inst. de Quimica; Fabi, Marino T [Rhodia S.A., Sao Paulo, SP (Brazil)

    1992-12-31

    This work studies various mono substituted aliphatic nitriles, Y C H{sub 2} (Y=H, F, Cl, Br, I, OMe, S Me, SEt{sub 2}, Me and Ph), and some reference nitriles (Y=Et, n-Pr, n-Bu, n-Am, n-Hex and n-Hept) 12 refs., 3 tabs.

  8. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang; Jiang, Weilin; Liu, Wenbo; Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J.; Li, Tao; He, Chaohui; Yun, Di; Wang, Zhiguang

    2016-12-01

    Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to E21 and 4E20 ions/m2 with profiles of the implanted species peaked at 450 and 1500 nm, respectively. The masked overlapping irradiation created three study areas of He2+, Kr15+ and He2+ + Kr15+ implanted SiC. The doses at the depth of the peak He concentration in He2+ and He2+ + Kr15+ implanted SiC correspond to 4 and 25 dpa. The sample was subsequently annealed at 1600°C for 3 h in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, He presence in the co-implanted 3C-SiC significantly promotes He cavity growth, as contrasted to the smaller voids formed without He in the Kr15+ irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occur, but long-range Kr diffusion in SiC is not observed up to 1600°C.

  9. Multi-frequency EDMR studies of light-activated paramagnetic centers in μc-Si:H thin-film solar cells

    International Nuclear Information System (INIS)

    Meier, Christoph

    2014-01-01

    This thesis presents a comprehensive study of paramagnetic centers in fully-processed microcrystalline silicon (μc-Si:H) thin-film solar cells. The heterogeneous material gives rise to a complex band structure with deep defects in the middle of the energy band gap as well as localized states close to the energy band edges. They can act as recombination centers and traps and, thereby, influence the charge transport of photogenerated charge carriers. Thus, they diminish the performance of the cell. To reduce the disadvantageous influence of the defect states on the cell efficiency, a detailed understanding of the charge transport processes via these states is necessary. In this work, light-activated paramagnetic centers are studied with electrically detected magnetic resonance (EDMR) at various microwave frequencies. This technique combines electron paramagnetic resonance spectroscopy (EPR) with the photocurrent measurement in the solar cell, thus, delivering information about the transport processes and magnetic parameters of the involved defect states. Multi-frequency EDMR at low temperatures reveals four paramagnetic states in μc-Si:H. Dangling bond (db) defects and holes in valence band tail (h) states are located in the disordered phase, whereas so-called CE and V states originate from the crystalline phase. The multi-frequency approach allows for a separation of field-dependent and -independent line widths. All EDMR signals are affected by line broadening due to spin-spin interaction, which could be used to estimate mean inter-spin distances of around ∼ 0.5 nm for the V center and of ∼ 1-2 nm for the remaining centers. Based on the strong spin-spin coupling and on transient nutation experiments the V signal could be correlated with a vacancy site in its excited triplet state. From the particular properties of the CE line it was concluded that the corresponding states are located in inversion layers and potential wells close to the conduction band of

  10. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  11. Detection of Degradation Effects in Field-Aged c-Si Solar Cells through IR Thermography and Digital Image Processing

    Directory of Open Access Journals (Sweden)

    E. Kaplani

    2012-01-01

    Full Text Available Due to the vast expansion of photovoltaic (PV module production nowadays, a great interest is shown in factors affecting PV performance and efficiency under real conditions. Particular attention is being given to degradation effects of PV cells and modules, which during the last decade are seen to be responsible for significant power losses observed in PV systems. This paper presents and analyses degradation effects observed in severely EVA discoloured PV cells from field-aged modules operating already for 18–22 years. Temperature degradation effects are identified through IR thermography in bus bars, contact solder bonds, blisters, hot spots, and hot areas. I-V curve analysis results showed an agreement between the source of electrical performance degradation and the degradation effects in the defected cell identified by the IR thermography. Finally, an algorithm was developed to automatically detect EVA discoloration in PV cells through processing of the digital image alone in a way closely imitating human perception of color. This nondestructive and noncostly solution could be applied in the detection of EVA discoloration in existing PV installations and the automatic monitoring and remote inspection of PV systems.

  12. Studies of mono-crystalline CVD diamond pixel detectors

    CERN Document Server

    Bartz, E; Atramentov, O; Yang, Z; Hall-Wilton, R; Schnetzer, S; Patel, R; Bugg, W; Hebda, P; Halyo, V; Hunt, A; Marlow, D; Steininger, H; Ryjov, V; Hits, D; Spanier, S; Pernicka, M; Johns, W; Doroshenko, J; Hollingsworth, M; Harrop, B; Farrow, C; Stone, R

    2011-01-01

    The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLTs mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope. Published by Elsevier B.V.

  13. Humanos salvajes y monos altruistas. Reflexiones sobre Darwin

    Directory of Open Access Journals (Sweden)

    Jorge Martinez Contreras

    2009-10-01

    Full Text Available RESUMEN   Darwin propuso en 1871 que preferiría descender de un mono que de los “salvajes”. El mono es un babuino hamadryas que, en un relato de Brehm, salva a un infante de una jauría. Los “salvajes” son los fueguinos a los que visitó en los años 1830. ¿Por qué Darwin fue tan buen observador del comportamiento animal y por qué no dudo discernir en qué consistía la sociedad de cazadores-recolectores de los cuatro grupos de Tierra del Fuego?. Esto es lo que tratamos de dilucidar en este trabajo.   Palabras clave: Darwin, fueguinos, hamadryas, altruismo, egoísmo.

  14. Studies of mono-crystalline CVD diamond pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bugg, W. [University of Tennessee, Knoxville (United States); Hollingsworth, M., E-mail: mhollin3@utk.edu [University of Tennessee, Knoxville (United States); Spanier, S.; Yang, Z. [University of Tennessee, Knoxville (United States); Bartz, E.; Doroshenko, J.; Hits, D.; Schnetzer, S.; Stone, R.; Atramentov, O.; Patel, R.; Barker, A. [Rutgers University, Piscataway (United States); Hall-Wilton, R.; Ryjov, V.; Farrow, C. [CERN, Geneva (Switzerland); Pernicka, M.; Steininger, H. [HEPHY, Vienna (Austria); Johns, W. [Vanderbilt University, Nashville (United States); Halyo, V.; Harrop, B. [Princeton University, Princeton (United States); and others

    2011-09-11

    The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLT's mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope.

  15. Gamma spectra pictures using a digital plotter. Program MONO

    International Nuclear Information System (INIS)

    Los Arcos Merino, J.M.

    1978-01-01

    The program MONO has been written for a CALCOMP-936 digital plotter operating off- -line with a UMI VAC 1106 computer, to obtain graphic representations of single gamma spectra stored on magnetic tape. It allows to plot the whole spectrum or only a part, as well as to draw a given spectrum on the same or different picture than the previous one. Ten representation scales are available and at up nine comment lines can be written in a graphic. (Author) 4 refs

  16. Modification and performance evaluation of a mono-valve engine

    Science.gov (United States)

    Behrens, Justin W.

    A four-stroke engine utilizing one tappet valve for both the intake and exhaust gas exchange processes has been built and evaluated. The engine operates under its own power, but has a reduced power capacity than the conventional 2-valve engine. The reduction in power is traced to higher than expected amounts of exhaust gases flowing back into the intake system. Design changes to the cylinder head will fix the back flow problems, but the future capacity of mono-valve engine technology cannot be estimated. The back flow of exhaust gases increases the exhaust gas recirculation (EGR) rate and deteriorates combustion. Intake pressure data shows the mono-valve engine requires an advanced intake valve closing (IVC) time to prevent back flow of charge air. A single actuation camshaft with advanced IVC was tested in the mono-valve engine, and was found to improve exhaust scavenging at TDC and nearly eliminated all charge air back flow at IVC. The optimum IVC timing is shown to be approximately 30 crank angle degrees after BDC. The mono-valve cylinder head utilizes a rotary valve positioned above the tappet valve. The open spaces inside the rotary valveand between the rotary valve and tappet valve represent a common volume that needs to be reduced in order to reduce the base EGR rate. Multiple rotary valve configurations were tested, and the size of the common volume was found to have no effect on back flow but a direct effect on the EGR rate and engine performance. The position of the rotary valve with respect to crank angle has a direct effect on the scavenging process. Optimum scavenging occurs when the intake port is opened just after TDC.

  17. Moisture sources of the Mono Lake deglacial pluvial events

    Science.gov (United States)

    Wang, X.; Liang, M. C.; Ali, G.; Shen, C. C.; Cai, Y.; Ke, L.; Hemming, S. R.

    2016-12-01

    Enormously expanded lakes existed in the today's dry western US Great Basin during the last glacial period. The ancient shorelines located well above modern lake levels suggest that precipitation in lake basins must have been substantially higher in the past. It is however under debate whether the subtropical North Pacific or the tropical Pacific is the major moisture source that contributed to the pluvial events, particularly during the deglaciation. Here, we collected a suite of tufa carbonate samples deposited at the 2,080 meter terrace ( 135 meters above today's lake level) in the Mono Basin, California, a closed lake basin for the last 130 thousand years (kyr). At Goat Ranch, we discovered white, shiny, laminated botryoidal carbonate coatings on tufa mounds. Most of these coatings present two generations of formation separated by a hiatus, which indicates lake level fluctuations. Using high-precision U-Th dating techniques, we found that the lower layer was formed 14.1-14.4 kyr BP (corresponding to the North Atlantic Bølling warming period). The upper layer of the coating was formed 11.9-12.3 kyr BP (within the Younger Dryas event). We then obtained d18O, d13C, D47 and 17O-excess values for the two carbonate layers. The upper part is characterized by low d18O values, -8 to -12 ‰ VPDB, whereas the lower one has higher d18O values, -5 to -6 ‰ VPDB. Both share similar d13C values ( 1-2‰ VPDB). D47 analysis on the carbonates suggests that both layers were deposited in a water temperature of 9±2 oC (1s, n = 4 and 8, respectively). The two generations of carbonates present 17O-excess of moisture in values of 50±5 (1s, n=4) and 25±5 (1s, n=8) per meg VSMOW-SLAP, respectively. The large difference in 17O-excess of parent meteoric water points to different origins of moisture for the tufa carbonate formations. The high 17O-excess values during YD suggest a moisture source with a low relative humidity, consistent with the conventional view that the moisture

  18. Creep/Stress Rupture Behavior of 3D Woven SiC/SiC Composites with Sylramic-iBN, Super Sylramic-iBN and Hi-Nicalon-S Fibers at 2700F in Air

    Science.gov (United States)

    Bhatt, R. T.

    2017-01-01

    To determine the influence of fiber types on creep durability, 3D SiC/SiC CMCs were fabricated with Sylramic-iBN, super Sylramic-iBN and Hi-Nicalon-S fibers and the composite specimens were then tested under isothermal tensile creep at 14820C at 69, 103 and 138 MPa for up to 300hrs in air. The failed specimens were examined by scanning electron microscopy (SEM) and computed tomography (CT) for fracture mode analysis. The creep data of these composites are compared with those of other SiC/SiC composites in the literature. The results of this study will be presented.

  19. Fatigue Analysis of a Mono-Tower Platform

    DEFF Research Database (Denmark)

    Kirkegaard, Poul Henning; Sørensen, John Dalsgaard; Brincker, Rune

    In this paper, a fatigue reliability analysis of a Mono-tower platform is presented. The failure mode, fatigue failure in the butt welds, is investigated with two different models. The one with the fatigue strength expressed through SN relations, the other with the fatigue strength expressed thro...... of the natural period, damping ratio, current, stress Spectrum and parameters describing the fatigue strength. Further, soil damping is shown to be significant for the Mono-tower.......In this paper, a fatigue reliability analysis of a Mono-tower platform is presented. The failure mode, fatigue failure in the butt welds, is investigated with two different models. The one with the fatigue strength expressed through SN relations, the other with the fatigue strength expressed...... through linear-elastic fracture mechanics (LEFM). In determining the cumulative fatigue damage, Palmgren-Miner's rule is applied. Element reliability as well as systems reliability is estimated using first-order reliability methods (FORM). The sensitivity of the systems reliability to various parameters...

  20. Fatigue Reliability Analysis of a Mono-Tower Platform

    DEFF Research Database (Denmark)

    Kirkegaard, Poul Henning; Sørensen, John Dalsgaard; Brincker, Rune

    1991-01-01

    In this paper, a fatigue reliability analysis of a Mono-tower platform is presented. The failure mode, fatigue failure in the butt welds, is investigated with two different models. The one with the fatigue strength expressed through SN relations, the other with the fatigue strength expressed thro...... of the natural period, damping ratio, current, stress spectrum and parameters describing the fatigue strength. Further, soil damping is shown to be significant for the Mono-tower.......In this paper, a fatigue reliability analysis of a Mono-tower platform is presented. The failure mode, fatigue failure in the butt welds, is investigated with two different models. The one with the fatigue strength expressed through SN relations, the other with the fatigue strength expressed...... through linear-elastic fracture mechanics (LEFM). In determining the cumulative fatigue damage, Palmgren-Miner's rule is applied. Element reliability, as well as systems reliability, is estimated using first-order reliability methods (FORM). The sensitivity of the systems reliability to various parameters...

  1. Reconstruction of mono-vacancies in carbon nanotubes: Atomic relaxation vs. spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Berber, S. [Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571 (Japan)]. E-mail: berber@comas.frsc.tsukuba.ac.jp; Oshiyama, A. [Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571 (Japan)

    2006-04-01

    We have investigated the reconstruction of mono-vacancies in carbon nanotubes using density functional theory (DFT) geometry optimization and electronic structure calculations, employing a numerical basis set. We considered mono-vacancies in achiral nanotubes with diameter range {approx}4-9A. Contrary to previous tight-binding calculations, our results indicate that mono-vacancies could have several metastable geometries, confirming the previous plane-wave DFT results. Formation energy of mono-vacancies is 4.5-5.5eV, increasing with increasing tube diameter. Net magnetic moment decreases from ideal mono-vacancy value after reconstruction, reflecting the reduction of the number of dangling bonds. In spite of the existence of a dangling bond, ground state of mono-vacancies in semiconducting tubes have no spin polarization. Metallic carbon nanotubes show net magnetic moment for most stable structure of mono-vacancy, except for very small diameter tubes.

  2. Reconstruction of mono-vacancies in carbon nanotubes: Atomic relaxation vs. spin polarization

    International Nuclear Information System (INIS)

    Berber, S.; Oshiyama, A.

    2006-01-01

    We have investigated the reconstruction of mono-vacancies in carbon nanotubes using density functional theory (DFT) geometry optimization and electronic structure calculations, employing a numerical basis set. We considered mono-vacancies in achiral nanotubes with diameter range ∼4-9A. Contrary to previous tight-binding calculations, our results indicate that mono-vacancies could have several metastable geometries, confirming the previous plane-wave DFT results. Formation energy of mono-vacancies is 4.5-5.5eV, increasing with increasing tube diameter. Net magnetic moment decreases from ideal mono-vacancy value after reconstruction, reflecting the reduction of the number of dangling bonds. In spite of the existence of a dangling bond, ground state of mono-vacancies in semiconducting tubes have no spin polarization. Metallic carbon nanotubes show net magnetic moment for most stable structure of mono-vacancy, except for very small diameter tubes

  3. Microwave Photocatalysis of Mono-Chloroacetic Acid over Nanoporous Titanium(IV) Oxide Thin Films Using Mercury Electrodeless Discharge Lamps

    Czech Academy of Sciences Publication Activity Database

    Církva, Vladimír; Žabová, Hana; Hájek, Milan

    2008-01-01

    Roč. 198, č. 1 (2008), s. 13-17 ISSN 1010-6030 R&D Projects: GA ČR GA104/06/0992; GA ČR GA104/07/1212 Institutional research plan: CEZ:AV0Z40720504 Keywords : microwave-assisted photocatalysis * electrodeless discharge lamp * mono-chloroacetic acid Subject RIV: CH - Nuclear ; Quantum Chemistry Impact factor: 2.362, year: 2008

  4. Genetic structure and hierarchical population divergence history of Acer mono var. mono in South and Northeast China.

    Directory of Open Access Journals (Sweden)

    Chunping Liu

    Full Text Available Knowledge of the genetic structure and evolutionary history of tree species across their ranges is essential for the development of effective conservation and forest management strategies. Acer mono var. mono, an economically and ecologically important maple species, is extensively distributed in Northeast China (NE, whereas it has a scattered and patchy distribution in South China (SC. In this study, the genetic structure and demographic history of 56 natural populations of A. mono var. mono were evaluated using seven nuclear microsatellite markers. Neighbor-joining tree and STRUCTURE analysis clearly separated populations into NE and SC groups with two admixed-like populations. Allelic richness significantly decreased with increasing latitude within the NE group while both allelic richness and expected heterozygosity showed significant positive correlation with latitude within the SC group. Especially in the NE region, previous studies in Quercus mongolica and Fraxinus mandshurica have also detected reductions in genetic diversity with increases in latitude, suggesting this pattern may be common for tree species in this region, probably due to expansion from single refugium following the last glacial maximum (LGM. Approximate Bayesian Computation-based analysis revealed two major features of hierarchical population divergence in the species' evolutionary history. Recent divergence between the NE group and the admixed-like group corresponded to the LGM period and ancient divergence of SC groups took place during mid-late Pleistocene period. The level of genetic differentiation was moderate (FST  = 0.073; G'ST  = 0.278 among all populations, but significantly higher in the SC group than the NE group, mirroring the species' more scattered distribution in SC. Conservation measures for this species are proposed, taking into account the genetic structure and past demographic history identified in this study.

  5. Genetic structure and hierarchical population divergence history of Acer mono var. mono in South and Northeast China.

    Science.gov (United States)

    Liu, Chunping; Tsuda, Yoshiaki; Shen, Hailong; Hu, Lijiang; Saito, Yoko; Ide, Yuji

    2014-01-01

    Knowledge of the genetic structure and evolutionary history of tree species across their ranges is essential for the development of effective conservation and forest management strategies. Acer mono var. mono, an economically and ecologically important maple species, is extensively distributed in Northeast China (NE), whereas it has a scattered and patchy distribution in South China (SC). In this study, the genetic structure and demographic history of 56 natural populations of A. mono var. mono were evaluated using seven nuclear microsatellite markers. Neighbor-joining tree and STRUCTURE analysis clearly separated populations into NE and SC groups with two admixed-like populations. Allelic richness significantly decreased with increasing latitude within the NE group while both allelic richness and expected heterozygosity showed significant positive correlation with latitude within the SC group. Especially in the NE region, previous studies in Quercus mongolica and Fraxinus mandshurica have also detected reductions in genetic diversity with increases in latitude, suggesting this pattern may be common for tree species in this region, probably due to expansion from single refugium following the last glacial maximum (LGM). Approximate Bayesian Computation-based analysis revealed two major features of hierarchical population divergence in the species' evolutionary history. Recent divergence between the NE group and the admixed-like group corresponded to the LGM period and ancient divergence of SC groups took place during mid-late Pleistocene period. The level of genetic differentiation was moderate (FST  = 0.073; G'ST  = 0.278) among all populations, but significantly higher in the SC group than the NE group, mirroring the species' more scattered distribution in SC. Conservation measures for this species are proposed, taking into account the genetic structure and past demographic history identified in this study.

  6. Genetic Structure and Hierarchical Population Divergence History of Acer mono var. mono in South and Northeast China

    Science.gov (United States)

    Shen, Hailong; Hu, Lijiang; Saito, Yoko; Ide, Yuji

    2014-01-01

    Knowledge of the genetic structure and evolutionary history of tree species across their ranges is essential for the development of effective conservation and forest management strategies. Acer mono var. mono, an economically and ecologically important maple species, is extensively distributed in Northeast China (NE), whereas it has a scattered and patchy distribution in South China (SC). In this study, the genetic structure and demographic history of 56 natural populations of A. mono var. mono were evaluated using seven nuclear microsatellite markers. Neighbor-joining tree and STRUCTURE analysis clearly separated populations into NE and SC groups with two admixed-like populations. Allelic richness significantly decreased with increasing latitude within the NE group while both allelic richness and expected heterozygosity showed significant positive correlation with latitude within the SC group. Especially in the NE region, previous studies in Quercus mongolica and Fraxinus mandshurica have also detected reductions in genetic diversity with increases in latitude, suggesting this pattern may be common for tree species in this region, probably due to expansion from single refugium following the last glacial maximum (LGM). Approximate Bayesian Computation-based analysis revealed two major features of hierarchical population divergence in the species’ evolutionary history. Recent divergence between the NE group and the admixed-like group corresponded to the LGM period and ancient divergence of SC groups took place during mid-late Pleistocene period. The level of genetic differentiation was moderate (FST = 0.073; G′ST = 0.278) among all populations, but significantly higher in the SC group than the NE group, mirroring the species’ more scattered distribution in SC. Conservation measures for this species are proposed, taking into account the genetic structure and past demographic history identified in this study. PMID:24498039

  7. Gamma spectra pictures using a digital plotter. Program MONO; Representacion de Espectros directos mediante un trazado digital. Prograa MONO

    Energy Technology Data Exchange (ETDEWEB)

    Los Arcos, J M

    1978-07-01

    The program MONO has been written for a CALCOMP-936 digital plotter operating off- -line with a UMI VAC 1106 computer, to obtain graphic representations of single gamma spectra stored on magnetic tape. It allows to plot the whole spectrum or only a part, as well as to draw a given spectrum on the same or different picture than the previous one. Ten representation scales are available and at up nine comment lines can be written in a graphic. (Author) 4 refs.

  8. A Tephra Database With an Intelligent Correlation System, Mono-Inyo Volcanic Chain, CA

    Science.gov (United States)

    Bursik, M.; Rogova, G.

    2004-12-01

    We are assembling a web-accessible, relational database of information on past eruptions of the Mono-Inyo volcanic chain, eastern California. The PostgreSQL database structure follows the North American Data Model and CordLink. The database allows us to extract the features diagnostic of particular pyroclastic layers, as well as lava domes and flows. The features include depth in the section, layer thickness and internal stratigraphy, mineral assemblage, major and trace element composition, tephra componentry and granulometry, and radiocarbon age. Our working hypotheses are that 1) the database will prove useful for unraveling the complex recent volcanic history of the Mono-Inyo chain 2) aided by the use of an intelligent correlation system integrated into the database system. The Mono-Inyo chain consists of domes, craters and flows that stretch for 50 km north-south, subparallel to the Sierran range front fault system. Almost all eruptions within the chain probably occurred less than 50,000 years ago. Because of the variety of magma and eruption types, and the migration of source regions in time and space, it is nontrivial to discern patterns of behaviour. We have explored the use of multiple artificial neural networks combined within the framework of the Dempster-Shafer theory of evidence to construct a hybrid information processing system as an aid in the correlation of Mono-Inyo pyroclastic layers. It is hoped that such a system could provide information useful to discerning eruptive patterns that would otherwise be difficult to sort and categorize. In a test case on tephra layers at known sites, the intelligent correlation system was able to categorize observations correctly 96% of the time. In a test case with layers at one unknown site, and using a pairwise comparison of the unknown site with the known sites, a one-to-one correlation between the unknown site and the known sites was found to sometimes be poor. Such a result could be used to aid a

  9. A New Adaptive Response Surface Model for Reliability Analysis of 2.5D C/SiC Composite Turbine Blade

    Science.gov (United States)

    Chang, Yaning; Sun, Zhigang; Sun, Weiyi; Song, Yingdong

    2017-11-01

    In order to calculate the failure probability of complex structures such as a 2.5D/SiC composites turbine blade and improve the structure safety, a new adaptive model of Response Surface (RS) analysis has been developed in this paper, which can improve the computational efficiency of structural failure problem while ensure the accuracy. The Gaussian Process Regression (GPR) theory was used to establish the RS and reconstruct the performance function of structure. And, an Adaptive Latin hypercube Sampling (ALHS) strategy was adopted in the process of establishing and correcting the RS. Finally the Direct Simulation Monte Carlo(DSMC)was utilized to calculate the failure probability of the performance function replacing the complex structure. Two numerical examples were calculated to validate the accuracy and computational efficiency of the proposed method. Additionally the finite element stress analysis results of 2.5D C/SiC composite turbine blade were used to structural reliability analysis by the proposed method. The approach in this paper provides a new way to evaluate the risk of the complex structures.

  10. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  11. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    Science.gov (United States)

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  12. The Effect of Nano sized Carbon Black on the Physical and Thermomechanical Properties of Al2O3-SiC-SiO2-C Composite

    International Nuclear Information System (INIS)

    Amin, M.H.; Ebrahimabadi, M.A.; Rahimipour, M.R.

    2009-01-01

    The effects of using nano sized carbon black in the range of 010 weight percentages on the physical and thermomechanical properties of Al 2 O 3 -Si C-SiO 2 graphite refractory composites were investigated. Nano sized carbon black addition improved the relative heat resistance and oxidation resistance of composites. The bulk density of the composites is reduced with increasing carbon black (CB) content. Increase in CB content first causes an increase in the apparent porosity, but at more than 3 wt % amount of CB, a decrease of apparent porosity was observed. The cold crushing strength (CCS) increased with increasing CB content in samples fired at 800 degree C and in samples fired at 1500 degree C when the content is increased to 3 wt %, but the CCS decreased with increasing CB content in samples fired at 1500 degree C when the CB content was less than 3 wt %. The composite without CB exhibits the highest value of CCS at firing temperature of 1500 degree C.

  13. Tribological Characteristics of C/C-SiC-Cu Composite and Al/SiC Composite Materials under Various Contact Conditions

    International Nuclear Information System (INIS)

    Kim, Byung-Kook; Shin, Dong-Gap; Kim, Chang-Lae; Kim, Dae-Eun; Goo, Byeong-Choon

    2017-01-01

    The surface temperature of disc brakes varies during braking, which can affect the friction and wear behavior of braking systems. In order to develop an efficient braking system, the friction and wear behaviors of brake materials need to be clearly understood. In this work, the friction and wear behavior of the C/C-SiC-Cu composite and the Al/SiC composite, which are used in disc braking systems, were investigated. Both the surface temperature and contact pressure were studied. A pin-on-reciprocating tribotester was used for this purpose, in order to control temperature and load. Results showed that the friction varied significantly with temperature and sliding distance. It was found that a transfer layer of compacted wear debris formed on the wear track of the two materials. These layers caused the surface roughness of the wear track to increase. The outcome of this work is expected to serve as a basis for the development of braking systems under various operating conditions.

  14. Tribological Characteristics of C/C-SiC-Cu Composite and Al/SiC Composite Materials under Various Contact Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byung-Kook; Shin, Dong-Gap; Kim, Chang-Lae; Kim, Dae-Eun [Yonsei Univ., Seoul (Korea, Republic of); Goo, Byeong-Choon [Korea Railroad Research Institute, Uiwang (Korea, Republic of)

    2017-01-15

    The surface temperature of disc brakes varies during braking, which can affect the friction and wear behavior of braking systems. In order to develop an efficient braking system, the friction and wear behaviors of brake materials need to be clearly understood. In this work, the friction and wear behavior of the C/C-SiC-Cu composite and the Al/SiC composite, which are used in disc braking systems, were investigated. Both the surface temperature and contact pressure were studied. A pin-on-reciprocating tribotester was used for this purpose, in order to control temperature and load. Results showed that the friction varied significantly with temperature and sliding distance. It was found that a transfer layer of compacted wear debris formed on the wear track of the two materials. These layers caused the surface roughness of the wear track to increase. The outcome of this work is expected to serve as a basis for the development of braking systems under various operating conditions.

  15. Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

    Science.gov (United States)

    Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

    2017-07-01

    In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

  16. Effects of two-scale transverse crack systems on the non-linear behaviour of a 2D SiC-SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Morvan, J.-M.; Baste, S. [Bordeaux-1 Univ., 33 - Talence (France). Lab. de Mecanique Physique

    1998-07-31

    By using both an ultrasonic device and an extensometer, it is possible to know which stiffness coefficients change during the damage process of a material and which part of the global strain is either elastic or inelastic. The influence of the two damage mechanisms is described for a woven 2D SiC-SiC composite. It appears that the two scales of this composite have a great influence on its behaviour. Two elementary mechanisms occur at both scales of the material: at the mesostructure level consisting of the bundles as well as of the inter-bundle matrix and at the microstructure level made from both the fibres and the intra-bundle matrix. The inelastic strains are sensitive to this two-scale effect: an increment of strain at constant stress that comes to saturation corresponding to the inter-bundle damage process and a strain which needs an increase in stress as cracking occurs at the fibres scale. With the help of a model that predicts the compliance changes caused by a crack system in a solid, it is possible to predict the crack density variation at both scales as well as the geometry of the various crack systems during monotonous loading. Furthermore, when the crack opening is taken into account, it appears that the inelastic strain is governed by the transverse crack density. (orig.) 12 refs.

  17. Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

    Science.gov (United States)

    Gruber, G.; Cottom, J.; Meszaros, R.; Koch, M.; Pobegen, G.; Aichinger, T.; Peters, D.; Hadley, P.

    2018-04-01

    SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured g-factors. Here, the HF spectra measured of different SiC MOSFETs are compared, and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC) center and the silicon vacancy (VSi) demonstrates that the PbC center is a more suitable candidate to explain the observed HF spectra.

  18. Thermal Gradient Cyclic Behavior of a Thermal/Environmental Barrier Coating System on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Lee, Kang N.; Miller, Robert A.

    2002-01-01

    Thermal barrier and environmental barrier coatings (TBCs and EBCs) will play a crucial role in future advanced gas turbine engines because of their ability to significantly extend the temperature capability of the ceramic matrix composite (CMC) engine components in harsh combustion environments. In order to develop high performance, robust coating systems for effective thermal and environmental protection of the engine components, appropriate test approaches for evaluating the critical coating properties must be established. In this paper, a laser high-heat-flux, thermal gradient approach for testing the coatings will be described. Thermal cyclic behavior of plasma-sprayed coating systems, consisting of ZrO2-8wt%Y2O3 thermal barrier and NASA Enabling Propulsion Materials (EPM) Program developed mullite+BSAS/Si type environmental barrier coatings on SiC/SiC ceramic matrix composites, was investigated under thermal gradients using the laser heat-flux rig in conjunction with the furnace thermal cyclic tests in water-vapor environments. The coating sintering and interface damage were assessed by monitoring the real-time thermal conductivity changes during the laser heat-flux tests and by examining the microstructural changes after the tests. The coating failure mechanisms are discussed based on the cyclic test results and are correlated to the sintering, creep, and thermal stress behavior under simulated engine temperature and heat flux conditions.

  19. Effect of Environment on Stress-Rupture Behavior of a Carbon Fiber-Reinforced Silicon Carbide (C/SiC) Ceramic Matrix Composite

    Science.gov (United States)

    Verrilli, Michael J.; Opila, Elizabeth J.; Calomino, Anthony; Kiser, J. Douglas

    2002-01-01

    Stress-rupture tests were conducted in air, vacuum, and steam-containing environments to identify the failure modes and degradation mechanisms of a carbon fiber-reinforced silicon carbide (C/SiC) composite at two temperatures, 600 and 1200 C. Stress-rupture lives in air and steam containing environments (50 - 80% steam with argon) are similar for a composite stress of 69 MPa at 1200 C. Lives of specimens tested in a 20% steam/argon environment were about twice as long. For tests conducted at 600 C, composite life in 20% steam/argon was 20 times longer than life in air. Thermogravimetric analysis of the carbon fibers was conducted under similar conditions to the stress-rupture tests. The oxidation rate of the fibers in the various environments correlated with the composite stress-rupture lives. Examination of the failed specimens indicated that oxidation of the carbon fibers was the primary damage mode for specimens tested in air and steam environments at both temperatures.

  20. Preparation and characterization of hybrid A359/(SiC+Si{sub 3}N{sub 4}) composites synthesized by stir/squeeze casting techniques

    Energy Technology Data Exchange (ETDEWEB)

    Shalaby, Essam A.M.; Churyumov, Alexander Yu., E-mail: churyumov@misis.ru; Solonin, Alexey N.; Lotfy, A.

    2016-09-30

    Stir followed by squeeze casting techniques were used to produce A359 composites containing different weight percentage of (SiC+Si{sub 3}N{sub 4}) particles. Microstructures of the composites showed a homogeneous and even distribution of hybrid reinforcements within the matrix. Moreover, particles agglomerations, residual porosity, and other casting problems were not noticed. Interfacial reactions between the particles and the matrix were investigated using X-ray diffraction and energy dispersive X-ray analyses. The presence of particles in squeezed composites did not only increase the peak hardness of the composites, but also accelerated the aging kinetics. As compared with the A359 matrix alloy, a compression test of the hybrid composites exhibited a significant increase in the yield and the ultimate compressive strengths with a relative reduction in the failure strain. Finite element modeling of the composite compression showed that strain concentration near large SiC particles is the main reason for low ductility of the composite. The development of those lightweight hybrid composites with high mechanical properties has a high potential to be used for automotive and aerospace applications.

  1. Mono- and di-n-butyl phosphates of some metals in spent nuclear fuel reprocessing

    Energy Technology Data Exchange (ETDEWEB)

    Solovkin, A.S.

    1982-01-01

    Results of investigations which have been carried out in the Soviet Union for the last 10 years on the determination of the composition, structure, conditions of the formation and solubility of mono- and di-n-butyl phosphates of metals (U/sup 6 +/, Pu/sup 4 +/, Pu/sup 3 +/, Th, Zr, Fe/sup 3 +/, Am, Al, rare-earth elements), which are important for the processes of irradiated nuclear fuel reprocessing, are presented. A conclusion is made that zirconium mono- and di-n-butyl phosphates are the least soluble in aqueous and organic solvents of all investigated compounds. FeA/sub 3/ and AmA/sub 3/ are weakly soluble in aqueous solutions. The other compounds are sufficiently soluble in moderately acidic aqueous solutions or in DBP and TBP with dilutents. The obtained results indicate at the similarity of zirconium and plutonium (4) chemical properties; thorium, in this respect, is not an analogue of plutonium (4). Possible structural formulas of the investigated compounds are considered.

  2. Significantly Enhanced Dielectric Performances and High Thermal Conductivity in Poly(vinylidene fluoride)-Based Composites Enabled by SiC@SiO2 Core-Shell Whiskers Alignment.

    Science.gov (United States)

    He, Dalong; Wang, Yao; Song, Silong; Liu, Song; Deng, Yuan

    2017-12-27

    Design of composites with ordered fillers arrangement results in anisotropic performances with greatly enhanced properties along a specific direction, which is a powerful tool to optimize physical properties of composites. Well-aligned core-shell SiC@SiO 2 whiskers in poly(vinylidene fluoride) (PVDF) matrix has been achieved via a modified spinning approach. Because of the high aspect ratio of SiC whiskers, strong anisotropy and significant enhancement in dielectric constant were observed with permittivity 854 along the parallel direction versus 71 along the perpendicular direction at 20 vol % SiC@SiO 2 loading, while little increase in dielectric loss was found due to the highly insulating SiO 2 shell. The anisotropic dielectric behavior of the composite is perfectly understood macroscopically to have originated from anisotropic intensity of interfacial polarization based on an equivalent circuit model of two parallel RC circuits connected in series. Furthermore, finite element simulations on the three-dimensional distribution of local electric field, polarization, and leakage current density in oriented SiC@SiO 2 /PVDF composites under different applied electrical field directions unambiguously revealed that aligned core-shell SiC@SiO 2 whiskers with a high aspect ratio significantly improved dielectric performances. Importantly, the thermal conductivity of the composite was synchronously enhanced over 7 times as compared to that of PVDF matrix along the parallel direction at 20 vol % SiC@SiO 2 whiskers loading. This study highlights an effective strategy to achieve excellent comprehensive properties for high-k dielectrics.

  3. High pressure structural phase transition of neodymium mono pnictides

    International Nuclear Information System (INIS)

    Pagare, Gitanjali; Ojha, P.; Sanyal, S.P.; Aynyas, Mahendra

    2007-01-01

    We have investigated theoretically the high-pressure structural phase transition of two neodymium mono NdX (X=As, Sb) using an interionic potential theory with necessary modification to include the effect of Coulomb screening by the delocalized f electrons of Nd ion. These compounds exhibits first order crystallographic phase transition from their NaCl (B 1 ) phase to body centered tetragonal (BCT) at 27 GPa and 15.3 GPa respectively. We also calculated the Nd-Nd distance as a function of pressure. (author)

  4. IRIS Toxicological Review of Ethylene Glycol Mono-Butyl ...

    Science.gov (United States)

    EPA released the draft report, Toxicological Review for Ethylene Glycol Mono-Butyl Ether , that was distributed to Federal agencies and White House Offices for comment during the Science Discussion step of the IRIS Assessment Development Process. Comments received from other Federal agencies and White House Offices are provided below with external peer review panel comments. EPA is conducting a peer review of the scientific basis supporting the human health hazard and dose-response assessment of EGBE that will appear on the Integrated Risk Information System (IRIS) database.

  5. Transient Monotonic and Cyclic Load Effects on Mono Bucket Foundations

    DEFF Research Database (Denmark)

    Nielsen, Søren Dam

    Today, 80 % of all European offshore wind turbines are installed on monopiles. A cost-effective alternative to the monopile is the mono bucket foundation. For an offshore wind turbine foundation in open seas, the dominant load is often coming from waves. During storms, large waves are formed...... the foundation is sucked to the seabed, creating extra capacity during the impact. Over the life-time of an offshore wind turbine foundation will be hit by millions of waves. Each wave might lead to a permanent rotation of the foundation. Therefore, it is important to be able to estimate the total deformation...

  6. Study by molecular dynamics of the influence of temperature and pressure on the optical properties of undoped 3C-SiC structures

    Science.gov (United States)

    Domingues, Gilberto; Monthe, Aubin Mekeze; Guévelou, Simon; Rousseau, Benoit

    2018-01-01

    Silicon carbide (SiC)-based open-cell foams appear to be promising porous materials for designing high-temperature energy conversion systems such as volumetric solar receivers. In these media, heat transfers and fluid flows occur simultaneously. The numerical models developed for computing the thermal efficiencies of SiC foams must take into account the energy contribution of thermal radiation. In particular, the thermal radiative properties of these foams must be accurately known. This explains why knowledge of the pressure and temperature dependences of the optical properties of the crystalline parts, which compose the foams, is of primary concern for computing the latter properties correctly. However, the data available in the literature provide the evolution laws of the dielectric functions, needed to calculate the optical properties, as dependent on one thermodynamic parameter at a time. To deal with this issue, a study of the temperature/pressure influence on the dielectric functions of a silicon carbide structure by simulation with molecular dynamics (MD) is presented in this paper. The Vashishta interaction potential, based on the sum of two- and three-body terms, is used in this study. The simulations are carried out on undoped 3C-SiC at pressures ranging from 0.2 to 20 GPa and temperatures ranging from 300 K to 1500 K. The dielectric functions are obtained by applying the linear response theory and comparing them with values provided in the literature, using a Lorentz model. The simulated results, in good agreement with the experimental ones, make it possible to establish the evolution laws of the dielectric functions with both parameters, temperature and pressure, applicable to any field requiring the use of undoped silicon carbide.

  7. Multi-length-scale Material Model for SiC/SiC Ceramic-Matrix Composites (CMCs): Inclusion of In-Service Environmental Effects

    Science.gov (United States)

    Grujicic, M.; Galgalikar, R.; Snipes, J. S.; Ramaswami, S.

    2016-01-01

    In our recent work, a multi-length-scale room-temperature material model for SiC/SiC ceramic-matrix composites (CMCs) was derived and parameterized. The model was subsequently linked with a finite-element solver so that it could be used in a general room-temperature, structural/damage analysis of gas-turbine engine CMC components. Due to its multi-length-scale character, the material model enabled inclusion of the effects of fiber/tow (e.g., the volume fraction, size, and properties of the fibers; fiber-coating material/thickness; decohesion properties of the coating/matrix interfaces; etc.) and ply/lamina (e.g., the 0°/90° cross-ply versus plain-weave architectures, the extent of tow crimping in the case of the plain-weave plies, cohesive properties of the inter-ply boundaries, etc.) length-scale microstructural/architectural parameters on the mechanical response of the CMCs. One of the major limitations of the model is that it applies to the CMCs in their as-fabricated conditions (i.e., the effect of prolonged in-service environmental exposure and the associated material aging-degradation is not accounted for). In the present work, the model is upgraded to include such in-service environmental-exposure effects. To demonstrate the utility of the upgraded material model, it is used within a finite-element structural/failure analysis involving impact of a toboggan-shaped turbine shroud segment by a foreign object. The results obtained clearly revealed the effects that different aspects of the in-service environmental exposure have on the material degradation and the extent of damage suffered by the impacted CMC toboggan-shaped shroud segment.

  8. A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Bin [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Jia, Ren-Xu, E-mail: rxjia@mail.xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Hu, Ji-Chao [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Tsai, Cheng-Ying [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 10617 Taipei, Taiwan (China); Zhang, Yu-Ming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

    2015-12-01

    Highlights: • A step-by-step experiment to investigate the growth mechanism of SiC hetero-epitaxial is proposed. • It has shown protrusive regular “hill” morphology with much lower density of DPB defect in our experiment, which normally were in high density with shallow groove. Based on the defect morphology, an anisotropy migration rate phenomenon of adatoms has been regarded as forming the morphology of DPB defects and a new “DPB defects assist epitaxy” growth mode has been proposed based on Frank-van der Merwe growth mode. - Abstract: To investigate the growth mechanism of hetero-epitaxial SiC, a step-by-step experiment of 3C-SiC epitaxial layers grown on 4H-SiC on-axis substrates by the CVD method are reported in this paper. Four step experiments with four one-quarter 4H-SiC wafers were performed. Optical microscopy and atomic force microscopy (AFM) were used to characterize the morphology of the epitaxial layers. It was previously found that the main factor affecting the epilayer morphology was double-positioning boundary (DPB) defects, which normally were in high density with shallow grooves. However, a protrusive regular “hill” morphology with a much lower density was shown in our experiment in high-temperature growth conditions. The anisotropic migration of adatoms is regarded as forming the morphology of DPB defects, and a new “DPB defects assist epitaxy” growth mode has been proposed based on the Frank-van der Merwe growth mode. Raman spectroscopy and X-ray diffraction were used to examine the polytypes and the quality of the epitaxial layers.

  9. MonoSLAM: real-time single camera SLAM.

    Science.gov (United States)

    Davison, Andrew J; Reid, Ian D; Molton, Nicholas D; Stasse, Olivier

    2007-06-01

    We present a real-time algorithm which can recover the 3D trajectory of a monocular camera, moving rapidly through a previously unknown scene. Our system, which we dub MonoSLAM, is the first successful application of the SLAM methodology from mobile robotics to the "pure vision" domain of a single uncontrolled camera, achieving real time but drift-free performance inaccessible to Structure from Motion approaches. The core of the approach is the online creation of a sparse but persistent map of natural landmarks within a probabilistic framework. Our key novel contributions include an active approach to mapping and measurement, the use of a general motion model for smooth camera movement, and solutions for monocular feature initialization and feature orientation estimation. Together, these add up to an extremely efficient and robust algorithm which runs at 30 Hz with standard PC and camera hardware. This work extends the range of robotic systems in which SLAM can be usefully applied, but also opens up new areas. We present applications of MonoSLAM to real-time 3D localization and mapping for a high-performance full-size humanoid robot and live augmented reality with a hand-held camera.

  10. Biosynthesis and Degradation of Mono-, Oligo-, and Polysaccharides: Introduction

    Science.gov (United States)

    Wilson, Iain B. H.

    Glycomolecules, whether they be mono-, oligo-, or polysaccharides or simple glycosides, are—as any biological molecules—the products of biosynthetic processes; on the other hand, at the end of their lifespan, they are also subject to degradation. The beginning point, biochemically, is the fixation of carbon by photosynthesis; subsequent metabolism in plants and other organisms results in the generation of the various monosaccharides. These must be activated—typically as nucleotide sugars or lipid-phosphosugars—before transfer by glycosyltransferases can take place in order to produce the wide variety of oligo- and polysaccharides seen in Nature; complicated remodelling processes may take place—depending on the pathway—which result in partial trimming of a precursor by glycosidases prior to the addition of further monosaccharide units. Upon completion of the 'life' of a glycoconjugate, glycosidases will degrade the macromolecule finally into monosaccharide units which can be metabolized or salvaged for incorporation into new glycan chains. In modern glycoscience, a wide variety of methods—genetic, biochemical, analytical—are being employed in order to understand these various pathways and to place them within their biological and medical context. In this chapter, these processes and relevant concepts and methods are introduced, prior to elaboration in the subsequent more specialized chapters on biosynthesis and degradation of mono-, oligo-, and polysaccharides.

  11. Non-cirrhotic portal hypertension in HIV mono-infected patients.

    Science.gov (United States)

    Jackson, Belinda D; Doyle, Joseph S; Hoy, Jennifer F; Roberts, Stuart K; Colman, John; Hellard, Margaret E; Sasadeusz, Joseph J; Iser, David M

    2012-09-01

    Unexplained liver injury including fibrosis and portal hypertension has rarely been reported among patients with HIV in the absence of co-infection with hepatitis B (HBV) or hepatitis C (HCV). We describe a series of HIV mono-infected patients with evidence of non-cirrhotic portal hypertension. HIV-infected patients with evidence of portal hypertension who were anti-HBV and anti-HCV negative and HBV and HCV RNA polymerase chain reaction (PCR) negative were identified from patients managed by the Victorian statewide HIV referral service located at The Alfred Hospital, Melbourne. Portal hypertension was defined as either radiological or endoscopic evidence of varices, portal vein flow obstruction, or elevated hepatic venous pressure gradient (HPVG). Five patients were found to have portal hypertension. These patients were male, aged 41 to 65 years, with known duration of HIV infection between 11 to 25 years. All had been treated with antiretroviral therapy, including didanosine. Tests for metabolic, autoimmune, and hereditary causes of liver disease failed to establish an etiology for the liver injury. All had radiological or endoscopic findings of varices, and four patients had radiological features of portal vein obstruction or flow reversal. Only one patient underwent HPVG measurement, which was elevated. Non-invasive fibrosis assessment revealed increased liver stiffness in three (out of four) patients, and no cirrhotic features were found on those who underwent liver biopsy. To our knowledge, this is the largest published series of non-cirrhotic portal hypertension in HIV mono-infected patients in Australia. Further research is needed to understand what relationship, if any, HIV or its treatments might have on liver injury over time. © 2012 Journal of Gastroenterology and Hepatology Foundation and Blackwell Publishing Asia Pty Ltd.

  12. Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

    International Nuclear Information System (INIS)

    Marinova, Maya; Zoulis, Georgios; Robert, Teddy; Mercier, Frederic; Mantzari, Alkioni; Galben, Irina; Kim-Hak, Olivier; Lorenzzi, Jean; Juillaguet, Sandrine; Chaussende, Didier; Ferro, Gabriel; Camassel, Jean; Polychroniadis, Efstathios K.

    2009-01-01

    The results of transmission electron microscopy (TEM) with low-temperature photoluminescence (LTPL) and Raman studies of liquid phase grown epilayers on top of a vapor liquid solid (VLS) grown 3C-SiC buffer layer are compared. While the 6H-SiC substrate was completely covered by the 3C-SiC seed after the first VLS process, degradation occurred during the early stage of the liquid phase epitaxy process. This resulted in polytype instabilities, such that several rhombohedral forms stabilized one after the other. These (21R-SiC, 57R-SiC) eventually led after few microns to a final transition back to 6H-SiC. This interplay of polytypes resulted in a complex optical signature, with specific LTPL and Raman features.

  13. Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO{sub 2} core/shell self-organized nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Fabbri, Filippo; Rossi, Francesca; Attolini, Giovanni; Salviati, Giancarlo; Iannotta, Salvatore [IMEM-CNR Institute, Viale Usberti 37/A, I-43124 Parma (Italy); Aversa, Lucrezia; Verucchi, Roberto; Nardi, Marco [IFN-CNR Institute, Via alla Cascata 56/C-Povo, I-38123 Trento (Italy); Fukata, Naoki [International Center for Materials Nanoarchitectonics, National Institute for Materials Science and PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Dierre, Benjamin; Sekiguchi, Takashi [Nano Device Characterization Group, Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2010-08-27

    We report the influence of the native amorphous SiO{sub 2} shell on the cathodoluminescence emission of 3C-SiC/SiO{sub 2} core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO{sub 2} and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO{sub 2}-SiC interface properties is also reported.

  14. Lake Level Changes in the Mono Basin During the Last Deglacial Period

    Science.gov (United States)

    Wang, X.; Ali, G.; Hemming, S. R.; Zimmerman, S. R. H.; Stine, S. W.; Hemming, G.

    2014-12-01

    Mono Basin, located in the southwestern corner of the US Great Basin, has long been known to have experienced large lake level changes, particularly during the last deglaciation. But until recently it was not possible to establish a reliable lake level time series. We discovered many visually clean, white, shiny, dense calcite samples in the basin, associated with tufa deposits from high terraces. Their low thorium, but high uranium contents allow precise and reproducible U/Th age determinations. A highly resolved history of a minimum lake level through the last deglaciation can therefore be inferred based on sample locations and their ages. We found that the lake level reached ~2030 m asl at ~20.4 ka, evidenced by calcite coatings on a tufa mound at the upper Wilson Creek. The lake then rose to ~2075 m by ~19.1 ka, shown by calcite cements on conglomerates from the Hansen Cut terrace. The lake climbed to at least ~2140 m at ~15.9 ka, indicated by beach calcites from the east Sierra slope. Such timing of the highest lake stand, occurring within Heinrich Stadial 1, is reinforced by U/Th dates on calcite coatings from widespread locations in the basin, including the Bodie Hills and Cowtrack Mountains. The lake then dropped rapidly to ~2075 m at ~14.5 ka. It stood near this height over the next ~300 years, evidenced by a few-centimeter thick, laminated calcite rims on the Goat Ranch tufa mounds. It subsequently plunged to ~2007 m at ~13.8 ka, indicated by calcite coatings from cemetery road tufa mounds. The lake level came back to ~2030 m at ~12.9 ka, as seen in upper Wilson Creek tufa mounds. The lake level had a few fluctuations within the Younger Dryas, and even shot up to ~2075 m at ~12.0 ka. It then fell to levels in accord with Holocene climatic conditions. Relative to the present lake level of ~1950 m, Mono Lake broadly stood high during Heinrich Stadial 1 and Younger Dryas, when the climate was extremely cold over the North Atlantic, and the Asian monsoon was

  15. Mono-jet signatures of gluphilic scalar dark matter

    Directory of Open Access Journals (Sweden)

    Rohini M. Godbole

    2017-09-01

    Full Text Available A gluphilic scalar dark matter (GSDM model has recently been proposed as an interesting vision for WIMP dark matter communicating dominantly with the Standard Model via gluons. We discuss the collider signature of a hard jet recoiling against missing momentum (“mono-jet” in such a construction, whose leading contribution is at one-loop. We compare the full one-loop computation with an effective field theory (EFT treatment, and find (as expected that EFT does not accurately describe regions of parameter space where mass of the colored mediator particles are comparable to the experimental cuts on the missing energy. We determine bounds (for several choices of SU(3 representation of the mediator from the s=8 TeV data, and show the expected reach of the s=13 TeV LHC and a future 100 TeV pp collider to constrain or discover GSDM models.

  16. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto; Syed, Ahad A.; Hussain, Muhammad Mustafa

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  17. Synthesis, purification, and time-dependent disposition studies of 9- or 10-mono-iodostearic acid and 9- and 10-mono-iodostearyl carnitine

    International Nuclear Information System (INIS)

    Reed, K.W.

    1985-01-01

    The purpose of this investigation was to evaluate the potential use of radiolabeled 9- or 10-mono-iodostearyl carnitine as a perfusion and metabolic imaging agent for the heart. Radiochemical purity was achieved and determined by the use of silica gel and/or anion exchange resin chromatography. Radiochemical yields of 45-63 and 4% were obtained for the fatty acid and carnitine ester, respectively. Male albino mice were sacrificed at 2, 5, 7, 10, 15, 20, 30, and 50 minutes post-injection with either 125 I 9- or 10-mono-iodostearic acid or 9- or 10-mono-iodostearyl (-) carnitine. The lungs, liver heart, kidney, spleen, pancreas, small intestine, stomach, thyroid, blood, fat, and skeletal muscle tissue were excised and assayed for levels of radioactivity in a NaI crystal well counter. The very low target-to-nontarget ratios obtained with 125 I 9- or 10-mono-iodostearyl carnitine in mice strongly suggest that radioiodinated 9- or 10-mono-iodostearyl carnitine is not suitable for use as a myocardial imaging agent. However, radioiodinated 9- or 10-mono-iodostearic acid showed promise as a myocardial imaging agent and may warrant further investigation

  18. Behavioral ecology of American Pikas (Ochotona princeps) at Mono Craters, California: living on the edge

    Science.gov (United States)

    Andrew T. Smith; John D. Nagy; Connie Millar

    2016-01-01

    The behavioral ecology of the American pika (Ochotona princeps) was investigated at a relatively hot south-facing, low-elevation site in the Mono Craters, California, a habitat quite different from the upper montane regions more typically inhabited by this species and where most prior investigations have been conducted. Mono Craters pikas exhibited...

  19. Magnetic and gravity studies of Mono Lake, east-central, California

    Science.gov (United States)

    Athens, Noah D.; Ponce, David A.; Jayko, Angela S.; Miller, Matt; McEvoy, Bobby; Marcaida, Mae; Mangan, Margaret T.; Wilkinson, Stuart K.; McClain, James S.; Chuchel, Bruce A.; Denton, Kevin M.

    2014-01-01

    From August 26 to September 5, 2011, the U.S. Geological Survey (USGS) collected more than 600 line-kilometers of shipborne magnetic data on Mono Lake, 20 line-kilometers of ground magnetic data on Paoha Island, 50 gravity stations on Paoha and Negit Islands, and 28 rock samples on Paoha and Negit Islands, in east-central California. Magnetic and gravity investigations were undertaken in Mono Lake to study regional crustal structures and to aid in understanding the geologic framework, in particular regarding potential geothermal resources and volcanic hazards throughout Mono Basin. Furthermore, shipborne magnetic data illuminate local structures in the upper crust beneath Mono Lake where geologic exposure is absent. Magnetic and gravity methods, which sense contrasting physical properties of the subsurface, are ideal for studying Mono Lake. Exposed rock units surrounding Mono Lake consist mainly of Quaternary alluvium, lacustrine sediment, aeolian deposits, basalt, and Paleozoic granitic and metasedimentary rocks (Bailey, 1989). At Black Point, on the northwest shore of Mono Lake, there is a mafic cinder cone that was produced by a subaqueous eruption around 13.3 ka. Within Mono Lake there are several small dacite cinder cones and flows, forming Negit Island and part of Paoha Island, which also host deposits of Quaternary lacustrine sediments. The typical density and magnetic properties of young volcanic rocks contrast with those of the lacustrine sediment, enabling us to map their subsurface extent.

  20. Using MDECR-PECVD to study the impact of ion bombardment energy on microstructural properties of μc-Si:H thin film grown from an SiF{sub 4}/H{sub 2} chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junkang; Florea, Ileana; Bulkin, Pavel V.; Maurice, Jean-Luc; Johnson, Erik V. [LPICM, CNRS, Ecole Polytechnique, Universite Paris Saclay, 91128 Palaiseau (France)

    2016-12-15

    The matrix-distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition (MDECR-PECVD) technique has been shown to achieve high deposition rates for hydrogenated microcrystalline silicon (μc-Si:H) thin film. Due to the fact that plasma is sustained by a microwave discharge, by biasing the substrate holder with additional power supply, one can achieve independent control over the plasma density and the maximum ion bombardment energy (IBE). In this work, we present studies of the impact of IBE on the microstructural properties of the μc-Si:H film deposited by MDECR-PECVD. Insufficient ion bombardment is found to be responsible for the substantial presence of nano-porous regions within the material, resulting in significant post-deposition oxidation. Good agreement between transmission electron microscopy (TEM) Fresnel contrast analysis and the results of infrared absorption and hydrogen effusion measurements for the deposited films suggest that moderate IBE is of vital importance to achieve high quality μc-Si:H. In doing so, denser films with significantly decreased nano-porous regions and better stability are obtained, which is of great interest to optimize the process parameters for solar cell applications. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  2. Sedimentary and Volcanic Records of the Laschamp and Mono Lake Excursions from Australia and New Zealand

    Science.gov (United States)

    Ingham, E. M.; Roberts, A. P.; Turner, G. M.; Heslop, D.; Ronge, T.; Conway, C.; Leonard, G.; Townsend, D.; Tiedemann, R.; Lamy, F.; Calvert, A. T.

    2014-12-01

    Geomagnetic excursions are short-lived deviations of the geomagnetic field from the normal range of secular variation. Despite significant advances in geomagnetic excursion research over the past 20 years, fundamental questions remain concerning the typical duration and global morphology of excursional geomagnetic fields. To answer such questions, more high-resolution, chronologically well-constrained excursion records are required, particularly from the Southern Hemisphere. We present preliminary paleomagnetic records of the Laschamp (~41 ka) and Mono Lake (~35 ka) excursions from three marine sediment cores from the Bounty Trough, New Zealand margin, and complementary volcanic records of the Laschamp excursion from lavas of Mt Ruapehu, New Zealand. Relatively high sedimentation rates of 12 - 26 cm/kyr in the Bounty Trough during glacial periods allow identification of excursional field behavior at each of the studied core locations. Each core displays one or two excursional events, with rapid directional swings between stable normal polarity and reversed excursional directions, each associated with coincident relative paleointensity minima. These anomalous paleomagnetic directions are interpreted to represent the Laschamp and Mono Lake excursions, based on a combination of tephrochronology, radiocarbon dating, and cyclostratigraphy (defined from core-scanning X-ray fluorescence and magnetic susceptibility records). Beside these records, we present results from fourteen lava flows, on Mt Ruapehu, for which 40Ar-39Ar dating indicates ages of between 39 and 45 ka. The step heating 40Ar-39Ar experiments produced particularly flat age plateaus, with corresponding 2 s.d. errors mostly approaching 1 kyr. The youngest and oldest flows carry normal polarity magnetization, however six flows, dated between 41 and 43 ka, display transitional field characteristics. Three of these flows display a declination swing of around 180o, which coincides with a previously published

  3. 21 CFR 582.4505 - Mono- and diglycerides of edible fats or oils, or edible fat-forming acids.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Mono- and diglycerides of edible fats or oils, or... GENERALLY RECOGNIZED AS SAFE Emulsifying Agents § 582.4505 Mono- and diglycerides of edible fats or oils, or edible fat-forming acids. (a) Product. Mono- and diglycerides of edible fats or oils, or edible fat...

  4. Professional iPhone Programming with MonoTouch and .NET/C#

    CERN Document Server

    McClure, Wallace B; Dunn, Craig

    2010-01-01

    What .NET C# developers need to enter the hot field of iPhone apps. iPhone applications offer a hot opportunity for developers. Until the open source MonoTouch project, this field was limited to those familiar with Apple's programming languages. Now .NET and C# developers can join the party. This Wrox guide is the first book to cover MonoTouch, preparing developers to take advantage of this lucrative opportunity.: MonoTouch opens the field of iPhone app development to .NET and C# developers for the first time; the Wrox reputation among .NET developers assures them that this guide covers everyt

  5. THE RECOGNITION OF SPOKEN MONO-MORPHEMIC COMPOUNDS IN CHINESE

    Directory of Open Access Journals (Sweden)

    Yu-da Lai

    2012-12-01

    Full Text Available This paper explores the auditory lexical access of mono-morphemic compounds in Chinese as a way of understanding the role of orthography in the recognition of spoken words. In traditional Chinese linguistics, a compound is a word written with two or more characters whether or not they are morphemic. A monomorphemic compound may either be a binding word, written with characters that only appear in this one word, or a non-binding word, written with characters that are chosen for their pronunciation but that also appear in other words. Our goal was to determine if this purely orthographic difference affects auditory lexical access by conducting a series of four experiments with materials matched by whole-word frequency, syllable frequency, cross-syllable predictability, cohort size, and acoustic duration, but differing in binding. An auditory lexical decision task (LDT found an orthographic effect: binding words were recognized more quickly than non-binding words. However, this effect disappeared in an auditory repetition and in a visual LDT with the same materials, implying that the orthographic effect during auditory lexical access was localized to the decision component and involved the influence of cross-character predictability without the activation of orthographic representations. This claim was further confirmed by overall faster recognition of spoken binding words in a cross-modal LDT with different types of visual interference. The theoretical and practical consequences of these findings are discussed.

  6. Loss of Kynurenine 3-Mono-oxygenase Causes Proteinuria.

    Science.gov (United States)

    Korstanje, Ron; Deutsch, Konstantin; Bolanos-Palmieri, Patricia; Hanke, Nils; Schroder, Patricia; Staggs, Lynne; Bräsen, Jan H; Roberts, Ian S D; Sheehan, Susan; Savage, Holly; Haller, Hermann; Schiffer, Mario

    2016-11-01

    Changes in metabolite levels of the kynurenine pathway have been observed in patients with CKD, suggesting involvement of this pathway in disease pathogenesis. Our recent genetic analysis in the mouse identified the kynurenine 3-mono-oxygenase (KMO) gene (Kmo) as a candidate gene associated with albuminuria. This study investigated this association in more detail. We compared KMO abundance in the glomeruli of mice and humans under normal and diabetic conditions, observing a decrease in glomerular KMO expression with diabetes. Knockdown of kmo expression in zebrafish and genetic deletion of Kmo in mice each led to a proteinuria phenotype. We observed pronounced podocyte foot process effacement on long stretches of the filtration barrier in the zebrafish knockdown model and mild podocyte foot process effacement in the mouse model, whereas all other structures within the kidney remained unremarkable. These data establish the candidacy of KMO as a causal factor for changes in the kidney leading to proteinuria and indicate a functional role for KMO and metabolites of the tryptophan pathway in podocytes. Copyright © 2016 by the American Society of Nephrology.

  7. Fringing in MonoCam Y4 filter images

    International Nuclear Information System (INIS)

    Brooks, J.; Nomerotski, A.; Fisher-Levine, M.

    2017-01-01

    We study the fringing patterns observed in MonoCam, a camera with a single Large Synoptic Survey Telescope (LSST) CCD sensor. Images were taken at the U.S. Naval Observatory in Flagstaff, Arizona (NOFS) employing its 1.3 m telescope and an LSST y 4 filter. Fringing occurs due to the reflection of infrared light (700 nm or larger) from the bottom surface of the CCD which constructively or destructively interferes with the incident light to produce a net ''fringe'' pattern which is superimposed on all images taken. Emission lines from the atmosphere, dominated by hydroxyl (OH) spectra, can change in their relative intensities as the night goes on, producing different fringe patterns in the images taken. We found through several methods that the general shape of the fringe patterns remained constant, though with slight changes in the amplitude and phase of the fringes. We also found that a superposition of fringes from two monochromatic lines taken in the lab offered a reasonable description of the sky data.

  8. Electron transfer kinetics on mono- and multilayer graphene.

    Science.gov (United States)

    Velický, Matěj; Bradley, Dan F; Cooper, Adam J; Hill, Ernie W; Kinloch, Ian A; Mishchenko, Artem; Novoselov, Konstantin S; Patten, Hollie V; Toth, Peter S; Valota, Anna T; Worrall, Stephen D; Dryfe, Robert A W

    2014-10-28

    Understanding of the electrochemical properties of graphene, especially the electron transfer kinetics of a redox reaction between the graphene surface and a molecule, in comparison to graphite or other carbon-based materials, is essential for its potential in energy conversion and storage to be realized. Here we use voltammetric determination of the electron transfer rate for three redox mediators, ferricyanide, hexaammineruthenium, and hexachloroiridate (Fe(CN)(6)(3-), Ru(NH3)(6)(3+), and IrCl(6)(2-), respectively), to measure the reactivity of graphene samples prepared by mechanical exfoliation of natural graphite. Electron transfer rates are measured for varied number of graphene layers (1 to ca. 1000 layers) using microscopic droplets. The basal planes of mono- and multilayer graphene, supported on an insulating Si/SiO(2) substrate, exhibit significant electron transfer activity and changes in kinetics are observed for all three mediators. No significant trend in kinetics with flake thickness is discernible for each mediator; however, a large variation in kinetics is observed across the basal plane of the same flakes, indicating that local surface conditions affect the electrochemical performance. This is confirmed by in situ graphite exfoliation, which reveals significant deterioration of initially, near-reversible kinetics for Ru(NH3)(6)(3+) when comparing the atmosphere-aged and freshly exfoliated graphite surfaces.

  9. Mono-energy coronary angiography with a compact light source

    Science.gov (United States)

    Eggl, Elena; Mechlem, Korbinian; Braig, Eva; Kulpe, Stephanie; Dierolf, Martin; Günther, Benedikt; Achterhold, Klaus; Herzen, Julia; Gleich, Bernhard; Rummeny, Ernst; Noël, Peter B.; Pfeiffer, Franz; Muenzel, Daniela

    2017-03-01

    While conventional x-ray tube sources reliably provide high-power x-ray beams for everyday clinical practice, the broad spectra that are inherent to these sources compromise the diagnostic image quality. For a monochromatic x-ray source on the other hand, the x-ray energy can be adjusted to optimal conditions with respect to contrast and dose. However, large-scale synchrotron sources impose high spatial and financial demands, making them unsuitable for clinical practice. During the last decades, research has brought up compact synchrotron sources based on inverse Compton scattering, which deliver a highly brilliant, quasi-monochromatic, tunable x-ray beam, yet fitting into a standard laboratory. One application that could benefit from the invention of these sources in clinical practice is coronary angiography. Being an important and frequently applied diagnostic tool, a high number of complications in angiography, such as renal failure, allergic reaction, or hyperthyroidism, are caused by the large amount of iodine-based contrast agent that is required for achieving sufficient image contrast. Here we demonstrate monochromatic angiography of a porcine heart acquired at the MuCLS, the first compact synchrotron source. By means of a simulation, the CNR in a coronary angiography image achieved with the quasi-mono-energetic MuCLS spectrum is analyzed and compared to a conventional x-ray-tube spectrum. The results imply that the improved CNR achieved with a quasi-monochromatic spectrum can allow for a significant reduction of iodine contrast material.

  10. Conventional laparoscopic adrenalectomy versus laparoscopic adrenalectomy through mono port.

    Science.gov (United States)

    Kwak, Ha Na; Kim, Jun Ho; Yun, Ji-Sup; Son, Byung Ho; Chung, Woong Youn; Park, Yong Lai; Park, Chan Heun

    2011-12-01

    A standard procedure for single-port laparoscopic adrenal surgery has not been established. We retrospectively investigated intraoperative and postoperative outcomes after laparoscopic adrenalectomy through mono port (LAMP) and conventional laparoscopic adrenalectomy to assess the feasibility of LAMP. Between March 2008 and December 2009, 22 patients underwent adrenalectomy at the Department of Surgery, Kangbuk Samsung Hospital. Twelve patients underwent conventional laparoscopic adrenalectomy and 10 patients underwent LAMP. The same surgeon performed all the surgeries. The 2 procedures were compared in terms of tumor size, operating time, time to resumption of a soft diet, length of hospital day, and postoperative complications. The 2 groups were similar in terms of tumor size (30.08 vs. 32.50 mm, P=0.796), mean operating time (112.9 vs. 127 min, P=0.316), time to resumption of a soft diet (1.25 vs. 1.30 d, P=0.805), and length of hospital day (4.08 vs. 4.50 d, P=0.447). Despite 1 patient in the LAMP group experiencing ipsilateral pleural effusion as a postoperative complication, this parameter was similar for the 2 groups (P=0.195). Perioperative mortality, blood transfusion, and conversion to open surgery did not occur. Perioperative outcomes for LAMP were similar to those for conventional laparoscopic adrenalectomy. LAMP appears to be a feasible option for adrenalectomy.

  11. Antioxidant and cytotoxic activity of mono- and bissalicylic acid derivatives

    Directory of Open Access Journals (Sweden)

    Đurendić Evgenija A.

    2014-01-01

    Full Text Available A simple synthesis of mono- and bis-salicylic acid derivatives 1-10 by the transesterification of methyl salicylate (methyl 2-hydroxybenzoate with 3-oxapentane-1,5-diol, 3,6- dioxaoctane-1,8-diol, 3,6,9-trioxaundecane-1,11-diol, propane-1,2-diol or 1-aminopropan- 2-ol in alkaline conditions is reported. All compounds were tested in vitro on three malignant cell lines (MCF-7, MDA-MB-231, PC-3 and one non-tumor cell line (MRC- 5. Strong cytotoxicity against prostate PC-3 cancer cells expressed compounds 3, 4, 6, 9 and 10, all with the IC50 less than 10 μmol/L, which were 11-27 times higher than the cytotoxicity of antitumor drug doxorubicin. All tested compounds were not toxic against the non-tumor MRC-5 cell line. Antioxidant activity of the synthesized derivatives was also evaluated. Compounds 2, 5 and 8 were better OH radical scavengers than commercial antioxidants BHT and BHA. The synthesized compounds showed satisfactory scavenger activity, which was studied by QSAR modeling. A good correlation between the experimental variables IC50 DPPH and IC50 OH and MTI (molecular topological indices molecular descriptors and CAA (accessible Connolly solvent surface area for the new compounds 1, 3, and 5 was observed.

  12. Retrofitting of beaters with mono-drive at a beater-wheel mill; Nachruestung von Vorschlaegern mit Mono-Antrieb an einer Schlagradmuehle

    Energy Technology Data Exchange (ETDEWEB)

    Krecher, Johannes J.; Hildebrandt, Rainer [Lignite-Mono-Drive Engineering GmbH, Essen (Germany); Geradts, Paul [RWE Power AG, Grevenbroich (Germany)

    2008-07-01

    Due to a future energy crisis, the use of the domestic brown coal continuously must be strengthened. At the beginning of 2007, the power station Frimmersdorf of RWE Power AG (Essen, Federal Republic of Germany) commissioned Lignite-Mono-Drive Engineering GmbH (Essen, Federal Republic of Germany) with the retrofitting of a N90.60 beater-wheel mill to a mono-drive-system. Thus, the production losses of 20 GWh/a of the 150 MW brown coal block M should be avoided, and the performance of this brown coal block should be increased by nearly 3 MW. Apart from the milling process and drying process, the authors of the contribution under consideration describe the application and operation results of these mono-drive-mills.

  13. Calix[6]arene mono-diazonium salt synthesis and covalent immobilization onto glassy carbon electrodes

    International Nuclear Information System (INIS)

    Cannizzo, Caroline; Jasmin, Jean-Philippe; Vautrin-Ul, Christine; Chausse, Annie; Wagner, Mathieu; Doizi, Denis; Lamouroux, Christine

    2014-01-01

    This Letter describes the fast synthesis of a mono-aminated calix[6]arene. The immobilization of this macrocycle onto glassy carbon electrodes via diazonium salt chemistry and the electrochemical characterization of the grafted organic layer are also reported. (authors)

  14. Developing C# Apps for iPhone and iPad using MonoTouch

    CERN Document Server

    Costanich, Bryan

    2011-01-01

    Developing C# Applications for iPhone and iPad using MonoTouch shows you how to use your existing C# skills to write apps for the iPhone and iPad. Fortunately, there's MonoTouch, Novell's .NET library that allows C# developers to write C# code that executes in iOS. Furthermore, MonoTouch allows you to address all the unique functions of the iPhone, iPod Touch, and iPad. And the big plus: You needn't learn any Objective-C to master MonoTouch!. Former Microsoft engineer and published app-store developer Bryan Costanich shows you how to use the tools you already know to create native apps in iOS

  15. Geothermal systems of the Mono Basin-Long Valley region, eastern California and western Nevada

    Energy Technology Data Exchange (ETDEWEB)

    Higgins, C.T.; Flynn, T.; Chapman, R.H.; Trexler, D.T.; Chase, G.R.; Bacon, C.F.; Ghusn, G. Jr.

    1985-01-01

    The region that includes Mono Basin, Long Valley, the Bridgeport-Bodie Hills area, and Aurora, in eastern California and western Nevada was studied to determine the possible causes and interactions of the geothermal anomalies in the Mono Basin-Long Valley region as a whole. A special goal of the study was to locate possible shallow bodies of magma and to determine their influence on the hydrothermal systems in the region. (ACR)

  16. Discovery and industrial applications of lytic polysaccharide mono-oxygenases.

    Science.gov (United States)

    Johansen, Katja S

    2016-02-01

    The recent discovery of copper-dependent lytic polysaccharide mono-oxygenases (LPMOs) has opened up a vast area of research covering several fields of application. The biotech company Novozymes A/S holds patents on the use of these enzymes for the conversion of steam-pre-treated plant residues such as straw to free sugars. These patents predate the correct classification of LPMOs and the striking synergistic effect of fungal LPMOs when combined with canonical cellulases was discovered when fractions of fungal secretomes were evaluated in industrially relevant enzyme performance assays. Today, LPMOs are a central component in the Cellic CTec enzyme products which are used in several large-scale plants for the industrial production of lignocellulosic ethanol. LPMOs are characterized by an N-terminal histidine residue which, together with an internal histidine and a tyrosine residue, co-ordinates a single copper atom in a so-called histidine brace. The mechanism by which oxygen binds to the reduced copper atom has been reported and the general mechanism of copper-oxygen-mediated activation of carbon is being investigated in the light of these discoveries. LPMOs are widespread in both the fungal and the bacterial kingdoms, although the range of action of these enzymes remains to be elucidated. However, based on the high abundance of LPMOs expressed by microbes involved in the decomposition of organic matter, the importance of LPMOs in the natural carbon-cycle is predicted to be significant. In addition, it has been suggested that LPMOs play a role in the pathology of infectious diseases such as cholera and to thus be relevant in the field of medicine. © 2016 Authors; published by Portland Press Limited.

  17. Coaxial Mono-Energetic Gamma Generator for Active Interrogation

    International Nuclear Information System (INIS)

    Ludewigt, Bernhard A.; Antolak, A.J.; Henestroza, E.; Leitner, M.; Leung, K.-N.; Waldron, W.; Wilde, S.; Kwan, J.W.

    2008-01-01

    Compact mono-energetic photon sources are sought for active interrogation systems to detect shielded special nuclear materials in, for example, cargo containers, trucks and other vehicles. A prototype gamma interrogation source has been designed and built that utilizes the 11B(p,gamma)12C reaction to produce 12 MeV gamma-rays which are near the peak of the photofission cross section. In particular, the 11B(p,gamma)12C resonance at 163 kV allows the production of gammas at low proton acceleration voltages, thus keeping the design of a gamma generator comparatively small and simple. A coaxial design has been adopted with a toroidal-shaped plasma chamber surrounding a cylindrical gamma production target. The plasma discharge is driven by a 2 MHz rf-power supply (capable up to 50 kW) using a circular rf-antenna. Permanent magnets embedded in the walls of the plasma chamber generate a multi-cusp field that confines the plasma and allows higher plasma densities and lower gas pressures. About 100 proton beamlets are extracted through a slotted plasma electrode towards the target at the center of the device that is at a negative 180 kV. The target consists of LaB6 tiles that are brazed to a water-cooled cylindrical structure. The generator is designed to operate at 500 Hz with 20 mu s long pulses, and a 1percent duty factor by pulsing the ion source rf-power. A first-generation coaxial gamma source has been built for low duty factor experiments and testing.

  18. Patterns of volcanism, weathering, and climate history from high-resolution geochemistry of the BINGO core, Mono Lake, California, USA

    Science.gov (United States)

    Zimmerman, S. R.; Starratt, S.; Hemming, S. R.

    2012-12-01

    Mono Lake, California is a closed-basin lake on the east side of the Sierra Nevada, and inflow from snowmelt dominates the modern hydrology. Changes in wetness during the last glacial period (>12,000 years ago) and over the last 2,000 years have been extensively described, but are poorly known for the intervening period. We have recovered a 6.25 m-long core from ~3 m of water in the western embayment of Mono Lake, which is shown by initial radiocarbon dates to cover at least the last 10,000 years. The sediments of the core are variable, ranging from black to gray silts near the base, laminated olive-green silt through the center, to layers of peach-colored carbonate nodules interbedded with gray and olive silts and pea-green organic ooze. Volcanic tephras from Bodie and Adobe Hills to the north, east, and south. The rhyolitic tephras of the Mono-Inyo Craters are much lower in TiO2 than the bedrock (10,000 calibrated years before present (cal yr BP) higher in the core, and significant disruption of the fine layers, this interval likely indicates a relatively deep lake persisting into the early Holocene, after the initial dramatic regression from late Pleistocene levels. The finely laminated olive-green silt of the period ~10,700 to ~7500 cal yr BP is very homogenous chemically, probably indicating a stable, stratified lake and a relatively wet climate. This section merits mm-scale scanning and petrographic examination in the future. The upper boundary of the laminated section shows rising Ca/K and decreasing Ti and Si/K, marking the appearance of authigenic carbonate layers. After ~7500 cal yr BP, the sediment in BINGO becomes highly variable, with increased occurrence of tephra layers and carbonate, indicating a lower and more variable lake level. A short interval of olive-green, laminated fine sand/silt just above a radiocarbon date of 3870 ± 360 cal yr BP may record the Dechambeau Ranch highstand of Stine (1990; PPP v. 78 pp 333-381), and is marked by a distinct

  19. Roles of mono-ubiquitinated Smad4 in the formation of Smad transcriptional complexes

    International Nuclear Information System (INIS)

    Wang Bei; Suzuki, Hiroyuki; Kato, Mitsuyasu

    2008-01-01

    TGF-β activates receptor-regulated Smad (R-Smad) through phosphorylation by type I receptors. Activated R-Smad binds to Smad4 and the complex translocates into the nucleus and stimulates the transcription of target genes through association with co-activators including p300. It is not clear, however, how activated Smad complexes are removed from target genes. In this study, we show that TGF-β enhances the mono-ubiquitination of Smad4. Smad4 mono-ubiquitination was promoted by p300 and suppressed by the c-Ski co-repressor. Smad4 mono-ubiquitination disrupted the interaction with Smad2 in the presence of constitutively active TGF-β type I receptor. Furthermore, mono-ubiquitinated Smad4 was not found in DNA-binding Smad complexes. A Smad4-Ubiquitin fusion protein, which mimics mono-ubiquitinated Smad4, enhanced localization to the cytoplasm. These results suggest that mono-ubiquitination of Smad4 occurs in the transcriptional activator complex and facilitates the turnover of Smad complexes at target genes

  20. Generalized dynamic model and control of ambiguous mono axial vehicle robot

    Directory of Open Access Journals (Sweden)

    Frantisek Duchon

    2016-09-01

    Full Text Available This article deals with the novel concept of ambiguous mono axial vehicle robot. Such robot is a combination of Segway and dicycle, which utilizes the advantages of each chassis. The advantage of dicycle is lower energy consumption during the movement and the higher safety of carried payload. The movable platform inside the ambiguous mono axial vehicle allows using the various sensors or devices. This will change the ambiguous mono axial vehicle to the Segway type robot. Both these modes are necessary to control in the stable mode to ensure the safety of the ambiguous mono axial vehicle’s movement. The main contents of the article contain description of generalized dynamic model of ambiguous mono axial vehicle and related control of ambiguous mono axial vehicle. The proposal is unique in that the same controller is used for both modes. Several simulations verify proposed control schemes and identified parameters. Moreover, the dicycle type of platform has never been used in robotics and that is another novelty.

  1. Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)

    Science.gov (United States)

    Pickering, Michael A.; Taylor, Raymond L.; Goela, Jitendra S.; Desai, Hemant D.

    1992-01-01

    Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).

  2. Fast and accurate methods for the performance testing of highly-efficient c-Si photovoltaic modules using a 10 ms single-pulse solar simulator and customized voltage profiles

    International Nuclear Information System (INIS)

    Virtuani, A; Rigamonti, G; Friesen, G; Chianese, D; Beljean, P

    2012-01-01

    Performance testing of highly efficient, highly capacitive c-Si modules with pulsed solar simulators requires particular care. These devices in fact usually require a steady-state solar simulator or pulse durations longer than 100–200 ms in order to avoid measurement artifacts. The aim of this work was to validate an alternative method for the testing of highly capacitive c-Si modules using a 10 ms single pulse solar simulator. Our approach attempts to reconstruct a quasi-steady-state I–V (current–voltage) curve of a highly capacitive device during one single 10 ms flash by applying customized voltage profiles–-in place of a conventional V ramp—to the terminals of the device under test. The most promising results were obtained by using V profiles which we name ‘dragon-back’ (DB) profiles. When compared to the reference I–V measurement (obtained by using a multi-flash approach with approximately 20 flashes), the DB V profile method provides excellent results with differences in the estimation of P max (as well as of I sc , V oc and FF) below ±0.5%. For the testing of highly capacitive devices the method is accurate, fast (two flashes—possibly one—required), cost-effective and has proven its validity with several technologies making it particularly interesting for in-line testing. (paper)

  3. Organic geochemistry and brine composition in Great Salt, Mono, and Walker Lakes

    Science.gov (United States)

    Domagalski, Joseph L.; Orem, W.H.; Eugster, H.P.

    1989-01-01

    Samples of Recent sediments, representing up to 1000 years of accumulation, were collected from three closed basin lakes (Mono Lake, CA, Walker Lake, NV, and Great Salt Lake, UT) to assess the effects of brine composition on the accumulation of total organic carbon, the concentration of dissolved organic carbon, humic acid structure and diagenesis, and trace metal complexation. The Great Salt Lake water column is a stratified Na-Mg-Cl-SO4 brine with low alkalinity. Algal debris is entrained in the high density (1.132-1.190 g/cc) bottom brines, and in this region maximum organic matter decomposition occurs by anaerobic processes, with sulfate ion as the terminal electron acceptor. Organic matter, below 5 cm of the sediment-water interface, degrades at a very slow rate in spite of very high pore-fluid sulfate levels. The organic carbon concentration stabilizes at 1.1 wt%. Mono Lake is an alkaline (Na-CO3-Cl-SO4) system. The water column is stratified, but the bottom brines are of lower density relative to the Great Salt Lake, and sedimentation of algal debris is rapid. Depletion of pore-fluid sulfate, near l m of core, results in a much higher accumulation of organic carbon, approximately 6 wt%. Walker Lake is also an alkaline system. The water column is not stratified, and decomposition of organic matter occurs by aerobic processes at the sediment-water interface and by anaerobic processes below. Total organic carbon and dissolved organic carbon concentrations in Walker Lake sediments vary with location and depth due to changes in input and pore-fluid sulfate concentrations. Nuclear magnetic resonance studies (13C) of humic substances and dissolved organic carbon provide information on the source of the Recent sedimentary organic carbon (aquatic vs. terrestrial), its relative state of decomposition, and its chemical structure. The spectra suggest an algal origin with little terrestrial signature at all three lakes. This is indicated by the ratio of aliphatic to

  4. Homoleptic mono- and dinuclear cationic alkoxydiphosphazane derivatives of rhodium

    International Nuclear Information System (INIS)

    Edwards, K.J.; Haines, R.J.; Meintjies, E.; Sigwarth, B.

    1990-01-01

    Treatment of the solvento species [Rh(C 8 H 12 )(solvent) 2 ][SbF 6 ] (solvent = methanol, ethanol, or tetrahydrofuran) with a twice-molar amount of the diphosphazane ligands (RO) 2 PN(R') P(OR) 2 (R' = Me or Et; R = Me, Et, or Pr i ) in the appropriate solvent leads to the ready formation of monocationic [Rh{(RO) 2 PN(R')P(OR) 2 } 2 ] + and/or dicationic [Rh 2 {μ-(RO) 2 PN(R')P(OR) 2 } 2 {(RO) 2 PN(R')P(OR) 2 } 2 ] 2+ hexafluoroantimonate salts, with the tendency to afford dinuclear derivatives decreasing along the series Me>Et>Pr i . Carbon monoxide readily forms addition products with these ionic species, giving rise to five-coordinate derivatives of the type [Rh(CO){(RO) 2 PN(R')P (OR) 2 } 2 ][SbF 6 ] in the case of the mononuclear derivatives, and inserting across the two rhodium atoms to afford [Rh 2 (μ-CO){μ-(MeO) 2 PN(Et)P(OMe) 2 } 2 {(MeO) 2 PN(Et)P(OMe) 2 } 2 ][SbF 6 ] 2 in the case of [Rh 2 {μ-(MeO) 2 PN (Et)P(OMe) 2 } 2 {(MeO) 2 PN(Et)P(OMe) 2 } 2 ][SbF 6 ] 2 . These mono- and dicationic derivatives also react readily with iodine affording [RhI 2 {(RO) 2 PN(R')P(OR) 2 } 2 ][SbF 6 ] and [Rh 2 (μ-I){μ-(MeO) 2 PN(Et)P(OMe) 2 } 2 {(MeO) 2 PN(Et)P(OMe) 2 } 2 ][SbF 6 ] n (n = 2 or 3) respectively. The coordination behaviour of the diphosphorus ligands (MeO) 2 PCH 2 P(OMe) 2 and Me 2 PCH 2 PMe 2 towards [Rh(C 8 H 12 )(solvent) 2 ][SbF 6 ] has also been investigated. 1 fig., 1 tab., 19 refs

  5. Probing the dark sector through mono-Z boson leptonic decays

    Science.gov (United States)

    Yang, Daneng; Li, Qiang

    2018-02-01

    Collider search for dark matter production has been performed over the years based on high p T standard model signatures balanced by large missing transverse energy. The mono-Z boson production with leptonic decay has a clean signature with the advantage that the decaying electrons and muons can be precisely measured. This signature not only enables reconstruction of the Z boson rest frame, but also makes possible recovery of the underlying production dynamics through the decaying lepton angular distribution. In this work, we exploit full information carried by the leptonic Z boson decays to set limits on coupling strength parameters of the dark sector. We study simplified dark sector models with scalar, vector, and tensor mediators and observe among them different signatures in the distribution of angular coefficients. Specifically, we show that angular coefficients can be used to distinguish different scenarios of the spin-0 and spin-1 models, including the ones with parity-odd and charge conjugation parity-odd operators. To maximize the statistical power, we perform a matrix element method study with a dynamic construction of event likelihood function. We parametrize the test statistic such that sensitivity from the matrix element is quantified through a term measuring the shape difference. Our results show that the shape differences provide significant improvements in the limits, especially for the scalar mediator models. We also present an example application of a matrix-element-kinematic-discriminator, an easier approach that is applicable for experimental data.

  6. Labelling by deuteration and nitroxide radicals of mono-, oligo- and polysaccharides (cellulose and amylose)

    Energy Technology Data Exchange (ETDEWEB)

    Odier, L

    1975-01-01

    The application of NMR and deuteration labelling to the investigation of polysaccharides has led to considerable progress in recent years in the knowledge of these compounds. Although far more recent, the introduction of spin labelling techniques in the investigation of polymers, has given rise to interesting EPR studies of synthetic and natural macromolecules, but nothing appears to have been accomplished in the area of spin labelling of polysaccharides. This work was aimed at applying these two techniques to the study of glucose derivatives and of some of its oligomers (low molecular weight polymers): cellobiose, maltose and cyclodextrins; and its polymers: cellulose and amylose. Irrespective of the technique employed, the complexity of the polymers and problems connected with handling them always require the same procedure: an initial study of a model compound generally prepared from the monomer or an oligomer (dimer), followed by the oligomers, and finally the polymer. Part 1 is devoted to the deuteration labelling of mono- and oligosaccharides. Part 2 concerns spin labelling of cellulose acetate. In part 3, an attempt is made to apply the spin labelling technique to the determination of conformations of two disaccharides of different glycosidic configurations: cellobiose and maltose. Part 4 is devoted to spin and deuteration labelling of ..cap alpha.. and ..beta.. cyclodextrins.

  7. Influence of nitrogen and phosphorous on the growth and root morphology of Acer mono.

    Science.gov (United States)

    Razaq, Muhammad; Zhang, Peng; Shen, Hai-Long; Salahuddin

    2017-01-01

    Nitrogen and phosphorous are critical determinants of plant growth and productivity, and both plant growth and root morphology are important parameters for evaluating the effects of supplied nutrients. Previous work has shown that the growth of Acer mono seedlings is retarded under nursery conditions; we applied different levels of N (0, 5, 10, and 15 g plant-1) and P (0, 4, 6 and 8 g plant-1) fertilizer to investigate the effects of fertilization on the growth and root morphology of four-year-old seedlings in the field. Our results indicated that both N and P application significantly affected plant height, root collar diameter, chlorophyll content, and root morphology. Among the nutrient levels, 10 g N and 8 g P were found to yield maximum growth, and the maximum values of plant height, root collar diameter, chlorophyll content, and root morphology were obtained when 10 g N and 8 g P were used together. Therefore, the present study demonstrates that optimum levels of N and P can be used to improve seedling health and growth during the nursery period.

  8. Effect of space flight on physiological indexes and antioxidant enzymes of Acer mono

    International Nuclear Information System (INIS)

    Li Yunfei; Yang Fan; Ren Yunhui

    2012-01-01

    To investigate the effects of space flight on physiological indexes and antioxidant enzymes of Acer mono, seeds were divided into two groups, one was treated by carrying on Shijian No.8 breeding satellite for 15 d, and the other was kept on the ground as controls. 5 years old seedlings that derived from the seeds of space flight and the seeds of ground control were chosen as materials, then the growth characteristics, photosynthetic characteristics, soluble protein content and antioxidant enzymes activities were analyzed. The results showed that the plant growth, net photosynthetic rate (Pn), chlorophyll content, superoxide dismutase (SOD) activity and soluble protein content of seedlings after space flight were much higher than those of ground control. However, the changes of malondialdehyde (MDA) content, peroxidase (POD), transpiration rate (Tr), intercellular carbon dioxide concentration (Ci) and stomatal conductance (Gs) were not significantly changed. The net photosynthetic rate (Pn), as well as the plant growth of seedlings after space flight were higher than those of the control. The improved ability of photosynthesis may be one of the reasons that seedlings from seeds of space flight have higher speed of growth. (authors)

  9. Ikaite precipitation by mixing of shoreline springs and lake water, Mono Lake, California, USA

    Science.gov (United States)

    Bischoff, James L.; Stine, Scott; Rosenbauer, Robert J.; Fitzpatrick, John A.; Stafford, Thomas W., Jr.

    1993-08-01

    Metastable ikaite (CaCO 3·6H 2O) forms abundantly during winter months along the south shoreline of Mono Lake where shoreline springs mix with lake water. Ikaite precipitates because of its decreased solubility at low temperature and because of orthophosphate-ion inhibition of calcite and aragonite. During the spring some of the ikaite is transformed to anhydrous CaCO 3 and is incorporated into tufa, but most is dispersed by wave action into the lake where it reacts to form gaylussite (Na 2Ca(CO 3) 2· 5H 2O). Spring waters have low pH values, are dominantly Ca-Na-HCO 3, have low radiocarbon activities, and are mixtures of deep-seated geothermal and cold groundwaters. Chemical modeling reveals that precipitation of CaCO 3 can occur over a broad range of mixtures of spring and lake water with a maximum production occurring at 96% spring water and 4% lake water. Under these conditions all the Ca and a significant fraction of the CO 3 of the precipitate is spring supplied. A radiocarbon age of 19,580 years obtained on a natural ikaite sample supports this conclusion. With the springs supplying a large and probably variable portion of the carbonate, and with apparent 14C age of the carbonate varying from spring to spring, tufa of similar actual antiquity may yield significantly different 14C dates, making tufa at this location unsuitable for absolute age dating by the radiocarbon method.

  10. Comparison of skeletal stability after sagittal split ramus osteotomy among mono-cortical plate fixation, bi-cortical plate fixation, and hybrid fixation using absorbable plates and screws.

    Science.gov (United States)

    Ueki, Koichiro; Moroi, Akinori; Yoshizawa, Kunio; Hotta, Asami; Tsutsui, Takamitsu; Fukaya, Kenichi; Hiraide, Ryota; Takayama, Akihiro; Tsunoda, Tatsuta; Saito, Yuki

    2017-02-01

    The purpose of this study was to examine skeletal stability and plate breakage after sagittal split ramus osteotomy (SSRO) with the mono-cortical plate fixation, bi-cortical plate fixation, and hybrid fixation techniques using absorbable plates and screws. A total of 76 Japanese patients diagnosed with mandibular prognathism with and without maxillary deformity were divided into 3 groups randomly. A total of 28 patients underwent SSRO with mono-cortical plate fixation, 23 underwent SSRO with bi-cortical plate fixation, and 25 underwent SSRO with hybrid fixation. Skeletal stability and horizontal condylar angle were analyzed by axial, frontal, and lateral cephalograms from before the operation to 1 year postoperatively. Breakage of the plate and screws was observed by 3-dimensional computed tomography (3DCT) immediately after surgery and after 1 year. Although there was a significant difference between the mono-cortical plate fixation group and hybrid fixation group regarding right MeAg in T1 (P = 0.0488) and occlusal plane in T1 (P = 0.0346), there were no significant differences between the groups for the other measurements in each time interval. In 2 cases, namely, 6 sides in the mono-cortical plate fixation group, breakage of the absorbable plate was found by 3DCT. However, there was no breakage in the bi-cortical plate fixation group and hybrid fixation group. This study results suggested that there were no significant differences in the postoperative skeletal stability among the 3 groups, and bi-cortical fixation as well as hybrid fixation was a reliable and useful method to prevent plate breakage even if an absorbable material was used. Copyright © 2016 European Association for Cranio-Maxillo-Facial Surgery. Published by Elsevier Ltd. All rights reserved.

  11. [Technique of complex mammary irradiation: Mono-isocentric 3D conformational radiotherapy and helical tomotherapy].

    Science.gov (United States)

    Vandendorpe, B; Guilbert, P; Champagne, C; Antoni, T; Nguyen, T D; Gaillot-Petit, N; Servagi Vernat, S

    2017-12-01

    To evaluate the dosimetric contribution of helical tomotherapy for breast cancers compared with conformal radiotherapy in mono-isocentric technique. For 23 patients, the dosimetric results in mono-isocentric 3D conformational radiotherapy did not satisfy the constraints either of target volumes nor organs at risk. A prospective dosimetric comparison between mono-isocentric 3D conformational radiotherapy and helical tomotherapy was therefore carried out. The use of helical tomotherapy showed a benefit in these 23 patients, with either an improvement in the conformity index or homogeneity, but with an increase in low doses. Of the 23 patients, two had pectus excavatum, five had past thoracic irradiation and two required bilateral irradiation. The other 14 patients had a combination of morphology and/or indication of lymph node irradiation. For these patients, helical tomotherapy was therefore preferred to mono-isocentric 3D conformational radiotherapy. Tomotherapy appears to provide better homogeneity and tumour coverage. This technique of irradiation may be justified in the case of morphological situations such as pectus exavatum and in complex clinical situations. In other cases, conformal radiotherapy in mono-isocentric technique remains to be favoured. Copyright © 2017 Société française de radiothérapie oncologique (SFRO). Published by Elsevier SAS. All rights reserved.

  12. Selective mono-radioiodination and characterization of a cell-penetrating peptide. L-Tyr-maurocalcine

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadi, Mitra; Bacot, Sandrine; Perret, Pascale; Riou, Laurent; Ghezzi, Catherine [Universite Joseph Fourier, Grenoble (France); INSERM U1039, Grenoble (France). Radiopharmaceutiques Biocliniques; Poillot, Cathy; Cestele, Sandrine [INSERM U836, Grenoble (France). Grenoble Inst. of Neuroscience; Universite Joseph Fourier, Grenoble (France); Desruet, Marie-Dominique [INSERM U1039, Grenoble (France). Radiopharmaceutiques Biocliniques; Couvet, Morgane; Bourgoin, Sandrine; Seve, Michel [CRI-INSERM U823, Grenoble (France). Inst. of Albert Bonniot; Universite Joseph Fourier, Grenoble (France); Waard, Michel de [INSERM U836, Grenoble (France). Grenoble Inst. of Neuroscience; Universite Joseph Fourier, Grenoble (France); Smartox Biotechnologies, Grenoble (France)

    2014-07-01

    Mono-and poly-iodinated peptides form frequently during radioiodination procedures. However, the formation of a single species in its mono-iodinated form is essential for quantitative studies such as determination of tissue concentration or image quantification. Therefore, the aim of the present study was to define the optimal experimental conditions in order to exclusively obtain the mono-iodinated form of L-maurocalcine (L-MCa). L-MCa is an animal venom toxin which was shown to act as a cell-penetrating peptide. In order to apply the current direct radioiodination technique using oxidative agents including chloramine T, Iodo-Gen {sup registered} or lactoperoxidase, an analogue of this peptide containing a tyrosine residue (Tyr-L-MCa) was synthesized and was shown to fold/oxidize properly. The enzymatic approach using lactoperoxidase/H{sub 2}O{sub 2} was found to be the best method for radioiodination of Tyr-L-MCa. MALDI-TOF mass spectrometry analyses were then used for identification of the chromatographic eluting components of the reaction mixtures. We observed that the production of different radioiodinated species depended upon the reaction conditions. Our results successfully described the experimental conditions of peptide radioiodination allowing the exclusive production of the mono-iodinated form with high radiochemical purity and without the need for a purification step. Mono-radioiodination of L-Tyr-MCa will be crucial for future quantitative studies, investigating the mechanism of cell penetration and in vivo biodistribution.

  13. PCNA mono-ubiquitination and activation of translesion DNA polymerases by DNA polymerase {alpha}.

    Science.gov (United States)

    Suzuki, Motoshi; Niimi, Atsuko; Limsirichaikul, Siripan; Tomida, Shuta; Miao Huang, Qin; Izuta, Shunji; Usukura, Jiro; Itoh, Yasutomo; Hishida, Takashi; Akashi, Tomohiro; Nakagawa, Yoshiyuki; Kikuchi, Akihiko; Pavlov, Youri; Murate, Takashi; Takahashi, Takashi

    2009-07-01

    Translesion DNA synthesis (TLS) involves PCNA mono-ubiquitination and TLS DNA polymerases (pols). Recent evidence has shown that the mono-ubiquitination is induced not only by DNA damage but also by other factors that induce stalling of the DNA replication fork. We studied the effect of spontaneous DNA replication errors on PCNA mono-ubiquitination and TLS induction. In the pol1L868F strain, which expressed an error-prone pol alpha, PCNA was spontaneously mono-ubiquitinated. Pol alpha L868F had a rate-limiting step at the extension from mismatched primer termini. Electron microscopic observation showed the accumulation of a single-stranded region at the DNA replication fork in yeast cells. For pol alpha errors, pol zeta participated in a generation of +1 frameshifts. Furthermore, in the pol1L868F strain, UV-induced mutations were lower than in the wild-type and a pol delta mutant strain (pol3-5DV), and deletion of the RAD30 gene (pol eta) suppressed this defect. These data suggest that nucleotide misincorporation by pol alpha induces exposure of single-stranded DNA, PCNA mono-ubiquitination and activates TLS pols.

  14. EXPANSIÓN Y DIVERGENCIA DEL LOCUS GH ENTRE EL MONO ARAÑA Y EL CHIMPANCÉ

    OpenAIRE

    DE MENDOZA, AGNÈS; ESQUIVEL, DOLORES; MARTÍNEZ, IRMA; BARRERA, HUGO

    2005-01-01

    Para precisar la historia muy particular de la hormona del crecimiento (GH) en los primates, se describieron los loci GH del mono araña, un mono del Nuevo Mundo y del chimpancé, una especie cercana al humano. Al menos seis genes integran ambos loci GH: todos del tipo GH en el mono araña, y dos GHs y cuatro lactógenos placentarios (PLs) en el chimpancé. Las regiones intergénicas del locus del chimpancé presentan un tamaño mayor a las del mono araña. Este trabajo conf...

  15. Impact of temperature on performance of series and parallel connected mono-crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2015-11-01

    Full Text Available This paper presents a study on impact of temperature on the performance of series and parallel connected mono-crystalline silicon (mono-Si solar cell employing solar simulator. The experiment was carried out at constant light intensity 550 W/m2with cell temperature in the range 25–60 oC for single, series and parallel connected mono-Si solar cells. The performance parameters like open circuit voltage, maximum power, fill factor and efficiency are found to decrease with cell temperature while the short circuit current is observed to increase. The experimental results reveal that silicon solar cells connected in series and parallel combinations follow the Kirchhoff’s laws and the temperature has a significant effect on the performance parameters of solar cell.

  16. Elaboration par différents procédés de pulvérisation et caractérisation de mono et multi-couches minces de carbure de bore et de carbonitrure de bore

    OpenAIRE

    Tavsanoglu , Tolga

    2009-01-01

    Thèse en cotutelle avec L'Institute of Science and Technology, Istanbul Teknik Universitesi (Turquie); Over the last 30 years there has been a great deal of interest in the research of hard and wear resistant coatings. There exist ceramic thin films for industrial applications such as cutting tools, automobile and machine part including TiN, TiAlN, TiC, SiC, WC as examples. However, increasing technological and industrial demands request thin films with more advanced properties. For this purp...

  17. Relationship between mono-hydroxy-carbazepine serum concentrations and adverse effects in patients on oxcarbazepine monotherapy.

    Science.gov (United States)

    Sattler, Annika; Schaefer, Marion; May, Theodor W

    2015-09-01

    To evaluate the relationship between serum concentrations of mono-hydroxy-carbazepine (MHD), the main metabolite of oxcarbazepine (OXC), and the occurrence of adverse effects (AE) in a large group of patients on OXC monotherapy. An antiepileptic drug (AED) therapeutic drug monitoring (TDM) database was analyzed especially with regard to OXC dosage, MHD serum concentration, and the occurrence of AE. In total, 893 blood samples of 442 patients were included in this retrospective study. The statistical evaluation was performed by means of Kaplan-Meier estimates, log-rank tests and generalized estimating equations (GEE). At least one AE was reported in 78 (17.6%) of the 442 patients. At MHD serum concentrations of 30.0 μg/ml and 43.7 μg/ml and OXC dosages of 33.1 mg/kg and 62.3 mg/kg, 25% and 75% of patients, respectively, experienced at least one AE. Log-rank tests indicated that younger patients (<18 years) may be able to tolerate higher MHD serum levels (p = 0.006) and higher OXC dosages per body weight (p < 0.001) compared to adult patients (≥ 18 years). Furthermore, AEs occurred at higher body-weight adjusted OXC dosages of extended release formulations compared to immediate-release formulations (p = 0.010), whereas MHD serum levels at which AEs occurred did not differ significantly between formulations (p = 0.125). Multivariate GEE confirmed the results. The occurrence of AEs is significantly (and non-linearly) dependent on MHD serum level, whereas the dependence of OXC dosage is less distinctive. But, tolerability of OXC seems to depend on age of the patients as well as on pharmaceutical formulation of OXC. Copyright © 2015 British Epilepsy Association. Published by Elsevier Ltd. All rights reserved.

  18. Carotid Angioplasty In Octogenarians: A Mono-Arm Trial With Clinical And Angiographic Follow Up

    Directory of Open Access Journals (Sweden)

    Ehsan Sharifipour

    2017-02-01

    Full Text Available Background: Octogenarians account for a third of ischemic stroke (IS patients and they have higher morbidity and mortality rate among IS patients. The aim of this study was to evaluate the pri-procedural and long term clinical and angiographic statement of carotid artery angioplasty (CAA in octogenarians. Methods: In a mono-arm trial 102 patients>80 years old with symptomatic internal carotid artery (ICA stenosis presented by non-disabling IS or TIA underwent the CAA and were evaluated prospectively from January 2010 to July 2014. All patients had standard stroke care during the study follow up. The peri-procedural complications, cerebrovascular accidents, restenosis in target vessel and mortality rate were recorded to evaluate safety and durability of this secondary stroke prevention method in octogenarians. Results: 48 (47.06% males and 54 (52.9% females in a mean period of 24.5±14.1 (6-50 months were followed. For all patients mean age was 83.39 ±2.53 (range, 80-88 years. The success rate of CAA was 100%, whereas the peri-procedural complication rate was 5.8% (access-site local hematoma and bradycardia during CAA both in 2.94%.There was only one patient who had acute ischemic stroke during the procedure. Restenosis occurred in 3.9% after a mean of 21.5 months. The proportion of recurrent cerebrovascular accident was 9.8% while TIAs occurred in 3.9% and stroke in 1% of patients. Also 4.9% of patients experienced coronary artery disease and the proportion of fatal recurrent cerebrovascular accident was 2.9%.  The median patient event-free survival was 20 months. Conclusion: CAA seems to be a safe and durable IS secondary prevention method in octogenarians with symptomatic carotid artery stenosis.

  19. Variation of sigma-hole magnitude with M valence electron population in MX(n)Y(4-n) molecules (n = 1-4; M = C, Si, Ge; X, Y = F, Cl, Br).

    Science.gov (United States)

    McDowell, Sean A C; Joseph, Jerelle A

    2014-01-14

    Sigma holes are described as electron-deficient regions on atoms, particularly along the extension of covalent bonds, due to non-uniform electron density distribution on the surface of these atoms. A computational study of MX(n)Y(4-n) molecules (n = 1-4; M = C, Si, Ge; X, Y = F, Cl, Br) was undertaken and it is shown that the relative sigma hole potentials on M due to X-M and Y-M can be adequately explained in terms of the variation in the valence electron population of the central M atom. A model is proposed for the depletion of the M valence electron population which explains the trends in sigma hole strengths, especially those that cannot be accounted for solely on the basis of relative electronegativities.

  20. Imaging the magmatic system of Mono Basin, California with magnetotellurics in three--dimensions

    Science.gov (United States)

    Peacock, Jared R.; Mangan, Margaret T.; McPhee, Darcy K.; Ponce, David A.

    2015-01-01

    A three–dimensional (3D) electrical resistivity model of Mono Basin in eastern California unveils a complex subsurface filled with zones of partial melt, fluid–filled fracture networks, cold plutons, and regional faults. In 2013, 62 broadband magnetotelluric (MT) stations were collected in an array around southeastern Mono Basin from which a 3D electrical resistivity model was created with a resolvable depth of 35 km. Multiple robust electrical resistivity features were found that correlate with existing geophysical observations. The most robust features are two 300 ± 50 km3 near-vertical conductive bodies (3–10 Ω·m) that underlie the southeast and north-eastern margin of Mono Craters below 10 km depth. These features are interpreted as magmatic crystal–melt mush zones of 15 ± 5% interstitial melt surrounded by hydrothermal fluids and are likely sources for Holocene eruptions. Two conductive east–dipping structures appear to connect each magma source region to the surface. A conductive arc–like structure (resistivity (200 Ω·m) suggestive of a cooled connection. A third, less constrained conductive feature (4–10 Ω·m) 15 km deep extending to 35 km is located west of Mono Craters near the eastern front of the Sierra Nevada escarpment, and is coincident with a zone of sporadic, long–period earthquakes that are characteristic of a fluid-filled (magmatic or metamorphic) fracture network. A resistive feature (103–105 Ω·m) located under Aeolian Buttes contains a deep root down to 25 km. The eastern edge of this resistor appears to structurally control the arcuate shape of Mono Craters. These observations have been combined to form a new conceptual model of the magmatic system beneath Mono Craters to a depth of 30 km.

  1. Ab initio CASSCF study of the electronic structure of the transition-metal alkylidene-like complexes Mo-M[prime]H[sub 2] (M[prime] = C, Si, Ge, and Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Marquez, A.; Sanz, J.F. (Universidad de Sevilla (Spain))

    1992-12-02

    Experimental and theoretical research on the electronic and geometric structure of transition-metal-carbenes and -alkylidenes is an active area in chemistry nowadays due to their potential activity in catalysis and in organic and organometallic synthesis. A theoretical investigation of the electronic structure of the high-valent, transition-metal, alkylidene-like complexes MoM[prime]H[sub 2] (M[prime] = C, Si, Ge, and Sn) is reported. Based on ab initio calculations carried out at the complete active space multiconfiguration self-consistent field (CASSCF) level, the molecular structure of the ground state and some low-lying excited states have been determined. For M[prime] = C, Si, and Ge, the ground state has C[sub 2v] symmetry (state [sup 5]B[sub 1]) and corresponds to pairing each electron of the M[prime]H[sub 2] triplet [sup 3]B[sub 1] with an electron of Mo ([sup 7]S). In the case of MoSnH[sub 2], the lowest state is bent (C[sub s] symmetry, state [sup 7]A[prime]), the out-of-plane angle being 68[degrees], and dissociates into SnH[sub 2] ([sup 1]A[sub 1]) + Mo ([sup 7]S). Dissociation energies, potential energy profiles for the dissociation, harmonic force constants in terms of internal symmetry coordinates, and vibrational frequencies are reported. The comparison of these properties with those of their pentacarbonylated homologous (CO)[sub 5]M[double bond]M[prime]H[sub 2] shows that the carbene-like (Fischer) type of complexation is stronger than the alkylidene-like one (Schrock). 28 refs., 4 figs., 6 tabs.

  2. The singlet-triplet energy gap in divalent three, five and seven-membered cyclic C2H2M, C4H4M and C6H6M (M = C, Si, Ge, Sn AND Pb

    Directory of Open Access Journals (Sweden)

    E. Vessally

    2009-08-01

    Full Text Available Total energy gaps, ∆Et–s, enthalpy gaps, ∆Ht–s, and Gibbs free energy gaps, ∆Gt–s, between singlet (s and triplet (t states were calculated for three, five and seven-membered cyclic C2H2M, C4H4M and C6H6M (M = C, Si, Ge, Sn and Pb at B3LYP/6-311++G**. The singlet-triplet free energy gaps, ∆Gt–s, for C2H2M (M = C, Si, Ge, Sn and Pb are found to be increased in the order: C2H2Si > C2H2C > C2H2Ge > C2H2Sn > C2H2Pb. The ∆Gt–s of C4H4M are found to be increased in the order: C4H4Pb > C4H4Sn > C4H4Ge > C4H4Si > C4H4C. Also, the ∆Gt–s of C6H6M are determined in the order: C6H6Pb > C6H6Ge ≥ C6H6Sn > C6H6Si > C6H6C. The most stable conformers of C2H2M, C4H4M and C6H6M are proposed for both the singlet and triplet states. Nuclear independent chemical shifts (NICS calculations were carried out for determination of aromatic character. The geometrical parameters are calculated and discussed.

  3. Strenuous running exacerbates knee cartilage erosion induced by low amount of mono-iodoacetate in rats

    OpenAIRE

    Saito, Ryusuke; Muneta, Takeshi; Ozeki, Nobutake; Nakagawa, Yusuke; Udo, Mio; Yanagisawa, Katsuaki; Tsuji, Kunikazu; Tomita, Makoto; Koga, Hideyuki; Sekiya, Ichiro

    2017-01-01

    Background It is still debated whether strenuous running in the inflammatory phase produces beneficial or harmful effect in rat knees. We examined (1) the dropout rate of rats during a 30-km running protocol, (2) influences of strenuous running and/or low amounts of mono-iodoacetate injection on cartilage, and (3) the effect of strenuous running on synovitis. Methods Rats were forced to run 30?km over 6?weeks and the dropout rate was examined. One week after 0.1?mg mono-iodoacetate was inject...

  4. Method for separating mono- and di-octylphenyl phosphoric acid esters

    International Nuclear Information System (INIS)

    Arnold, W.D. Jr.

    1977-01-01

    A method for separating mono-octylphenyl phosphoric acid ester and di-octylphenyl phosphoric acid ester from a mixture thereof comprises reacting the ester mixture with a source of lithium or sodium ions to form a mixture of the phosphate salts; contacting the salt mixture with an organic solvent which causes the dioctylphenyl phosphate salt to be dissolved in the organic solvent phase and the mono-octylphenyl phosphate salt to exist in a solid phase; separating the phases; recovering the phosphate salts from their respective phases; and acidifying the recovered salts to form the original phosphoric acid esters

  5. Tritium enrichment from aqueous solutions using cryosublimation of mono- and polysaccharides

    International Nuclear Information System (INIS)

    Wierczinski, B.; Muellen, G.; Rosenhauer, S.

    2008-01-01

    Cryosublimation is one technique, which allows the accumulation of tritium from aqueous solutions using certain chemical compounds. After studying several inorganic compounds such as zeolites and metal salts, as well as some humic substances, we have now investigated several mono- and polysaccharides, such as glucose, maltose, galactose, starch, agar, and gelatine. Except for starch all of the above mentioned compounds showed a clear enrichment of tritium. The highest value was reached for Agartine, which gave an enrichment factor of 6.2. Since mono- and polysaccharides form weak hydrogen bonds, these results prove again our theory that tritium is preferably accumulated in exchangeable hydrogen bonds. (author)

  6. 2 keV filters of quasi-mono-energetic neutrons

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; El-Mesiry, M.S.; Bashter, I.I.; Saleh, A.; Fathallah, M.

    2013-01-01

    A simulation study for the production of 2 keV filters of quasi-mono-energetic neutrons based on the deep interference minima in the 45 Sc total cross-section was carried out. A computer code QMENF-II was adapted to calculate the optimum amounts of the 45 Sc as a main filter element and additional component ones to obtain sufficient intensity at high resolution and purity of the filtered quasi-mono-energetic neutrons. The emitted neutron spectrum from nuclear reactor and from the reaction of 2.6 MeV protons on a lithium fluoride target at the accelerator beam port, are used for simulation

  7. Aza-Michael Mono-addition Using Acidic Alumina under Solventless Conditions

    Directory of Open Access Journals (Sweden)

    Giovanna Bosica

    2016-06-01

    Full Text Available Aza-Michael reactions between primary aliphatic and aromatic amines and various Michael acceptors have been performed under environmentally-friendly solventless conditions using acidic alumina as a heterogeneous catalyst to selectively obtain the corresponding mono-adducts in high yields. Ethyl acrylate was the main acceptor used, although others such as acrylonitrile, methyl acrylate and acrylamide were also utilized successfully. Bi-functional amines also gave the mono-adducts in good to excellent yields. Such compounds can serve as intermediates for the synthesis of anti-cancer and antibiotic drugs.

  8. Potential impact on water resources from future volcanic eruptions at Long Valley, Mono County, California, U.S.A

    International Nuclear Information System (INIS)

    Hopson, R.F.

    1991-01-01

    Earthquakes, ground deformation, and increased geothermal activity at Long Valley caldera after mid-1980 suggest the possibility of a volcanic eruption in the near future. An eruption there could have serious consequences for the City of Los Angeles, depending on the magnitude and volume of materials ejected because surface water in Mono Basin plus surface and groundwater in Owens Valley accounts for about 80% of its water supply. Eruptions of moderate to very large magnitude could impede the supply of water from this area for several days, weeks, or even years by discharging small to large volumes of volcanic ash and causing lahars. Soon after an eruption, water quality would likely be affected by the accumulation of organic debris and microorganisms in surface waters

  9. Development of scientific and technological basis for the fabrication of thin film solar cells on the basis of a-Si:H and {mu}c-Si:H using the 'hot-wire' deposition technique. Final report; Entwicklung wissenschaftlicher und technischer Grundlagen fuer die Herstellung von Duennschichtsolarzellen auf der Basis des a-Si:H und {mu}c-Si:H mit der 'Hot-Wire'-Depositionstechnik. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, B.

    2002-01-22

    Two new deposition systems were realized enabling the entire and respectively, large area deposition of a-Si:H based solar cells using the so called 'hot-wire' (HW) CVD. The deposition conditions for appropriate n- and p-doped a-Si:H and {mu}c-Si:H layers have been developed. For the first time in the world a-Si:H based pin solar cells were entirely deposited by the HWCVD method. A maximum initial conversion efficiency of {eta}{sub initial}=8.9% was obtained. After the development of a suitable p/n-tunnel/recombination junction pin-pin tandem structures with a-Si:H absorbers could be entirely fabricated by the HWCVD for the first time in the world, too. A conversion efficiency of {eta}=7% was measured for the tandem cell, after some structural degradation took place. In general, the stability of the HWCVD solar cells is not satisfactory, what could be attributed to a structural instability of the HWCVD-p-layers. For the first time we have deposited nip solar cells on stainless steel substrates entirely by HWCVD ({eta}{sub initial}>6%). The incorporation of {mu}c-Si:H absorber layers by HWCVD or ECWR-PECVD into pin solar cells was not successfull until now. Large area deposition of a-Si:H films has been performed in a simple vacuum vessel. Under consideration of appropriate filament and gas supply geometry as well as simulation calculations a good electronic quality and a film thickness uniformity of {delta}d={+-}2.5% of the material was obtained. i-layers for small area solar cells on an area of 20 x 20 cm{sup 2} have been deposited which could be completed to solar cells with very uniform conversion efficiencies of {eta}{sub initial} = 6,1{+-}0.2%. This result represents a proof of concept for the large area deposition of a-Si:H based solar cells using the HWCVD. Also for the first time the HWCVD was used for the deposition of emitter layers on c-Si-wafers to realize hetero solar cells. Hetero solar cells with amorphous, microcrystalline and epitaxial n

  10. Mono-2-ethylhexyl phthalate associated with insulin resistance and lower testosterone levels in a young population.

    Science.gov (United States)

    Chen, Szu-Ying; Hwang, Jing-Shiang; Sung, Fung-Chang; Lin, Chien-Yu; Hsieh, Chia-Jung; Chen, Pau-Chung; Su, Ta-Chen

    2017-06-01

    Phthalates are commonly used as plasticizers and are reported to associate with testicular dysfunction or insulin resistance in different studies, but the concurrent relationship between phthalate exposure, testosterone levels, and insulin resistance in the young population is not well understood. We recruited 786 subjects aged 12-30 years from a population-based sample of Taiwanese adolescents and young adults from 2006 to 2008. Generalized additive models were used to evaluate glucose homeostasis and testicular function in relation to seven urinary phthalate metabolites among adolescents (aged 12-20) and young adults (aged 20-30) in Taiwan. We observed a trend toward a decrease in male testosterone and an increase in urinary mono-2-ethylhexyl phthalate (MEHP) levels across four quartiles of homeostasis model assessment of insulin resistance (HOMA-IR). After adjusting for potential covariates, generalized additive models further showed that log-transformed insulin and HOMA-IR were raised by 0.055 [95% confidence interval (CI), 0.027-0.082] and 0.056 (95% CI, 0.027-0.084), respectively, with a one-unit increase in log-transformed MEHP in young adults. In male adults (aged 22-30), the log-testosterone levels were reduced by 0.018 (95% CI, 0.001-0.036), with a one-unit of increase in log-transformed MEHP. Such relationships were not observed in adolescents. In conclusion, this study demonstrated age-related associations of urinary MEHP metabolites with impaired metabolic homeostasis of glucose that were only observed in young adults. In addition, MEHP exposure was concurrently associated with lower testosterone levels in young, male adults. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Gps monitoring of the la valette landslide (french alps) with two mono-frequency receivers

    Science.gov (United States)

    Squarzoni, C.; Delacourt, C.; Allemand, P.

    2003-04-01

    In the last years, the Global Positioning System techniques have been more and more employed in landslide monitoring. Here we present an application of the GPS techniques on the La Valette landslide, located in the Ubaye Valley in the southern French Alps. This complex landslide is composed by an upper part affected essentially by rotational mechanism, a central part with a generally translational movement and a lower part, occasionally transforming in mud flow in coincidence with strong rainfall events. Displacement rates are in average of a few centimetres per month and can reach one centimetre per day during spring. GPS data presented in this study have been acquired with a couple of mono-frequency GPS receivers Magellan ProMARK X-CM associated with multipath-resistant antennas and processed with the Magellan post-processing software MSTAR. Nine points have been set in the whole zone, seven of them in the moving area, one in a stable area near the landslide and one on the facing slope, used as reference point. For each measure, one GPS receiver is placed on the base point and the second one is placed on each monitored point for one-hour sessions. The baseline between base and monitored point ranges from 480 and 1660 m. Nine campaigns of measure have been made between October 2000 and October 2002, to follow the evolution of the surface displacements. The GPS results have been compared with the distance-meter measurements achieved on the same site by RTM Service (Restauration des Terrains de Montagne). The velocities obtained by the two methods are similar. The advantage of the GPS technique is the obtention of the real 3D displacement vector. These measurements have been combined with SAR interferometric data in order to derive a 3D map of the deformation.

  12. Three-Dimensional Analysis of dike/fault interaction at Mono Basin (California) using the Finite Element Method

    Science.gov (United States)

    La Marra, D.; Battaglia, M.

    2013-12-01

    Mono Basin is a north-trending graben that extends from the northern edge of Long Valley caldera towards the Bodie Hills and is bounded by the Cowtrack Mountains on the east and the Sierra Nevada on the west. The Mono-Inyo Craters volcanic chain forms a north-trending zone of volcanic vents extending from the west moat of the Long Valley caldera to Mono Lake. The Hartley Springs fault transects the southern Mono Craters-Inyo Domes area between the western part of the Long Valley caldera and June Lake. Stratigraphic data suggest that a series of strong earthquakes occurred during the North Mono-Inyo eruption sequence of ~1350 A.D. The spatial and temporal proximity between Hartley Springs Fault motion and the North Mono-Inyo eruption sequence suggests a possible relation between seismic events and eruptions. We investigate the interactions between slip along the Hartley Springs fault and dike intrusion beneath the Mono-Inyo craters using a three-dimensional finite element model of the Mono Basin. We employ a realistic representation of the Basin that includes topography, vertical and lateral heterogeneities of the crust, contact relations between fault planes, and a physical model of the pressure required to propagate the dike. We estimate (a) the distribution of Coulomb stress changes to study the influence of dike intrusion on Hartley Springs fault, and (b) the local stress and volumetric dilatation changes to understand how fault slip may influence the propagation of a dike towards the surface.

  13. Experimental damping assessment of a full scale offshore mono bucket foundation

    DEFF Research Database (Denmark)

    Gres, Szymon; Fejerskov, Morten; Ibsen, Lars Bo

    2016-01-01

    This paper quantifies the system damping of a offshore meteorological mast supported by a Mono Bucket foundation based on a long-term experimental campaign. The structure is located at Dogger Bank west, North Sea, and equipped with a measurement system monitoring acceleration, strain, inclination...

  14. 21 CFR 172.856 - Propylene glycol mono- and diesters of fats and fatty acids.

    Science.gov (United States)

    2010-04-01

    ... fatty acids. 172.856 Section 172.856 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH... diesters of fats and fatty acids. Propylene glycol mono- and diesters of fats and fatty acids may be safely... and/or fatty acids in compliance with § 172.860 and/or oleic acid derived from tall oil fatty acids in...

  15. Elimination of Cu (II) and Zn (II) ions in mono-element and the bi ...

    African Journals Online (AJOL)

    Elimination of Cu (II) and Zn (II) ions in mono-element and the bi-element aqueous solutions by adsorption on natural clay of Bikougou (Gabon) ... The modeling of the experimental results is better achieved by application of. Freundlich adsorption isotherm and Langmuir adsorption isotherm concerning the adsorption of Cu ...

  16. Emotions in freely varying and mono-pitched vowels, acoustic and EGG analyses.

    Science.gov (United States)

    Waaramaa, Teija; Palo, Pertti; Kankare, Elina

    2015-12-01

    Vocal emotions are expressed either by speech or singing. The difference is that in singing the pitch is predetermined while in speech it may vary freely. It was of interest to study whether there were voice quality differences between freely varying and mono-pitched vowels expressed by professional actors. Given their profession, actors have to be able to express emotions both by speech and singing. Electroglottogram and acoustic analyses of emotional utterances embedded in expressions of freely varying vowels [a:], [i:], [u:] (96 samples) and mono-pitched protracted vowels (96 samples) were studied. Contact quotient (CQEGG) was calculated using 35%, 55%, and 80% threshold levels. Three different threshold levels were used in order to evaluate their effects on emotions. Genders were studied separately. The results suggested significant gender differences for CQEGG 80% threshold level. SPL, CQEGG, and F4 were used to convey emotions, but to a lesser degree, when F0 was predetermined. Moreover, females showed fewer significant variations than males. Both genders used more hypofunctional phonation type in mono-pitched utterances than in the expressions with freely varying pitch. The present material warrants further study of the interplay between CQEGG threshold levels and formant frequencies, and listening tests to investigate the perceptual value of the mono-pitched vowels in the communication of emotions.

  17. Some transition metal complexes derived from mono- and di-ethynyl perfluorobenzenes

    NARCIS (Netherlands)

    Armitt, D.J.; Bruce, M.I.; Gaudio, M.; Zaitseva, N.N.; Skelton, B.W.; White, A.H.; Le Guennic, B.; Halet, J.-F.; Fox, M.A.; Roberts, R.L.; Hartl, F.; Low, P.J.

    2008-01-01

    Transition metal alkynyl complexes containing perfluoroaryl groups have been prepared directly from trimethylsilyl-protected mono- and di-ethynyl perfluoroarenes by simple desilylation/metallation reaction sequences. Reactions between Me3SiC CC6F5 and RuCl(dppe)Cp'[Cp' = Cp, Cp*] in the presence of

  18. Nuchal translucency measurements are highly correlated in both mono- and dichorionic twin pairs

    DEFF Research Database (Denmark)

    Wøjdemann, Karen R; Larsen, Severin Olesen; Shalmi, Anne-Cathrine

    2006-01-01

    OBJECTIVES: To establish the distribution of serological and ultrasound first-trimester Down syndrome markers in twins and identify correlations of significance for risk calculation. METHODS: Nuchal translucency (NT), PAPP-A and betahCG data were extracted from 181 twin pregnancies (31 mono- and ...

  19. IRIS Toxicological Review of Ethylene Glycol Mono Butyl Ether (Egbe) (Final Report)

    Science.gov (United States)

    EPA has finalized the Toxicological Review of Ethylene Glycol Mono Butyl Ether: in support of the Integrated Risk Information System (IRIS). Now final, this assessment may be used by EPA’s program and regional offices to inform decisions to protect human health.

  20. IRIS Toxicological Review of Ethylene Glycol Mono-Butyl Ether (Egbe) (Interagency Science Discussion Draft)

    Science.gov (United States)

    EPA released the draft report, Toxicological Review for Ethylene Glycol Mono-Butyl Ether , that was distributed to Federal agencies and White House Offices for comment during the Science Discussion step of the IRIS Assessment Development Process. Comments received from ot...