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Sample records for molekulyarno-luchevoj ehpitaksii cdhgte

  1. TEM assessment of defects in (CdHg)Te heterostructures

    International Nuclear Information System (INIS)

    Lawson-Jack, S.G.; Jones, I.P.; Williams, D.J.; Astles, M.G.

    1991-01-01

    This paper reports on transmission electron microscopy used to assess the defect contents of the various layers and interfaces in (CdHg)Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3 μm thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2 left-angle 110 right-angle and either lie approximately parallel or inclined at an angle of ∼ 60 degrees to the interfactial plane

  2. Simple one-pot aqueous synthesis of CdHgTe nanocrystals using sodium tellurite as the Te source

    International Nuclear Information System (INIS)

    Shen, Zhitao; Luo, Chunhua; Huang, Rong; Wang, Yiting; Peng, Hui; Travas-sejdic, Jadranka

    2014-01-01

    In this work, we systematically investigated the one-pot aqueous synthesis conditions of CdHgTe nanocrystals (NCs) using sodium tellurite (Na 2 TeO 3 ) as the Te source, and found that the added content of Hg 2+ and the initial pH value of reaction solutions significantly affected the photoluminescence quantum yield (PL QY) of alloyed CdHgTe NCs. When the concentration of Cd was 1.0 mmol L −1 , the mole ratio of Cd/Te/Hg/MPA was 1:0.5:0.05:2.4, and the initial pH value of the reaction solution was about 8.78, the PL QY of as-prepared CdHgTe NCs was up to 45%. Characterization by HRTEM and XRD confirmed the crystalline nature of CdHgTe NCs. Compared to other synthetic approaches of CdHgTe NCs, our experimental results indicate that Na 2 TeO 3 could be an attractive alternative Te source to directly synthesize CdHgTe NCs in aqueous media. - Highlights: • A one-pot method was developed for the synthesis of highly luminescent CdHgTe nanocrystals (NCs). • Sodium tellurite was used as the Te source. • The quantum yield reached up to 45%. • The experimental conditions were optimized and the prepared CdHgTe NCs were characterized

  3. The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

    CSIR Research Space (South Africa)

    Gouws, GJ

    1993-05-01

    Full Text Available The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found to be unsuitable due...

  4. Analysis of the electrical conduction in CdHgTe crystals

    International Nuclear Information System (INIS)

    Dziuba, Z.

    1987-01-01

    The electrical conduction versus magnetic field in p-like CdHgTe samples at 77 K is investigated by analysing the conductivity tensor components. The electrical conduction is mainly due to electrons in the conduction band and low-mobility carriers in an impurity band. In the investigated samples Cd/sub x/Hg/sub 1-x/Te with the composition x approximately 0.17 the concentration of electrons in the conduction band is higher than the intrinsic one and in samples with the composition close to HgTe the concentration of electrons in the conduction band is equal to or lower than the intrinsic one. The model of a half-filled impurity band situated close to the bottom of the conduction band is proposed to account for the concentration of electrons in the conduction band. (author)

  5. The room-temperature synthesis of anisotropic CdHgTe quantum dot alloys: a "molecular welding" effect.

    Science.gov (United States)

    Taniguchi, Shohei; Green, Mark; Lim, Teck

    2011-03-16

    The room-temperature chemical transformation of spherical CdTe nanoparticles into anisotropic alloyed CdHgTe particles using mercury bromide in a toluene/methanol system at room temperature has been investigated. The resulting materials readily dissolved in toluene and exhibited a significant red-shift in the optical properties toward the infrared region. Structural transformations were observed, with electron microscopy showing that the CdTe nanoparticles were chemically attached ('welded') to other CdTe nanoparticles, creating highly complex anisotropic heterostructures which also incorporated mercury.

  6. Anti-VEGF antibody conjugated CdHgTe quantum dots as a fluorescent probe for imaging in living mouse

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Lili; Cui, Hongjing [Department of Analytical Chemistry, China Pharmaceutical University, Nanjing (China); Liu, Yu [Department of Biochemistry, School of Life Science and Technology, China Pharmaceutical University, Nanjing (China); Zhong, Wenying, E-mail: wyzhong@cpu.edu.cn [Department of Analytical Chemistry, China Pharmaceutical University, Nanjing (China); Key laboratory of Biomedical Functional Materials, China Pharmaceutical University, Nanjing (China)

    2016-05-15

    The dual-function anti-VEGF antibody conjugated CdHgTe quantum dots with good targeting property was successfully prepared. In this system, anti-VEGF antibody is not only a target agent but also a therapeutic drug. The anti-VEGF antibody conjugated near-infrared quantum dots can achieve the purposes of detection and treatment at the same time. As-prepared dual-function fluorescent probe in this work has been successfully applied for in vivo and in vitro imaging, which is promising in rapid tumor detection.

  7. A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure

    Science.gov (United States)

    Voitsekhovskii, A. V.; Grigor'ev, D. V.; Korotaev, A. G.; Kokhanenko, A. P.; Tarasenko, V. F.; Shulepov, M. A.

    2012-03-01

    The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·1016 cm3 and mobility 500 cm2·V-1·s-1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.

  8. CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.; Dvoretsky, S. A.; Kovchavtsev, A. P.; Marin, D. V.; Sabinina, I. V.; Sidorov, Yu. G.; Sidorov, G. Yu.; Tsarenko, A. V.; Yakushev, M. V., E-mail: yakushev@isp.nsc.ru [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2016-12-15

    The parameters of multilayer Cd{sub x}Hg{sub 1–x}Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p{sup +}–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10{sup 15} cm{sup –3}. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n{sup +}–p-type diodes.

  9. Temperature dependences of photoconductivity of CdHgTe crystals with photoactive inclusions

    International Nuclear Information System (INIS)

    Vlasenko, A.I.; Vlasenko, Z.K.

    1999-01-01

    Temperature dependences of life time τ and spectral characteristics of photoconductivity for Cd x Hg 1-x Te crystals (x = 0.2) with photoactive inclusions are investigated. It is shown that the N-type character of effective lifetime temperature dependences in nonhomogeneous crystals, in particular, its sharp temperature activation in the region of transition from the impurity to the intrinsic conductivity is determined by not the Shockley-Read mechanism, but by the interband impact mechanism with changing effective geometrical sizes of recombination active regions under temperature increase. Within the frames of this model the smoothing of the non-monotone character of the photoconductivity spectral characteristics in the region of fundamental absorption under the heating is explained. The calculation results that are in qualitative agreement with the experimental data are presented [ru

  10. A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

    International Nuclear Information System (INIS)

    Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

    2005-01-01

    A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

  11. Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

    Science.gov (United States)

    Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

    1988-05-01

    The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

  12. Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozlov, D. V., E-mail: dvkoz@impras.ru; Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Varavin, V. S.; Mikhailov, N. N.; Dvorestky, S. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Teppe, F. [Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

    2015-12-15

    The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

  13. Lock-in amplifier- based rotating- analyzer spectroscopic ellipsometer with micro-controlled angular frequency

    Energy Technology Data Exchange (ETDEWEB)

    Flores C, J.M.; Nunez O, O.F.; Rodriguez P, G.; Lastras M, A.; Lastras M, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi (Mexico)

    2005-07-01

    We report on the development of a full operational rotating analyzer spectroscopic ellipsometer. This instrument employs a phase-sensitive amplifier to process the optical signal as an alternative to Fast Fourier Transform analysis. We describe electronic hardware designed to stabilize the rotation frequency of the analyzer prism as well as to drive the device for the positioning of the polarizer prism azimuth. The ellipsometer allows for dielectric function measurement in the energy range from 1.7-5.5 eV, in both ambient air and Ultra High Vacuum (UHV). UHV measurements can be carried out at a temperature as low as 150 K. To evaluate the ellipsometer performance we present results of the determination of the complex dielectric function of a number of semiconductors, namely, GaSb, GaAs, InGaAs, CdTe and CdHgTe. (Author)

  14. A study of the breakdown of Friedel's law in electron backscatter Kikuchi diffraction patterns: Application to zincblende-type structures

    International Nuclear Information System (INIS)

    Baba-Kishi, K.Z.

    1991-01-01

    The breakdown of Friedel's law has been observed in backscatter Kikuchi diffraction patterns (BKDP) obtained in the scanning electron microscope (SEM) from a series of zincblende structures including GaAs, InP, GaSb, CdHgTe and the minerals sphalerite (ZnS), chalcopyrite (CuFeS 2 ) and tetrahedrite (Cu 12 Sb 4 S 13 ). Differences in intensities were observed between the reflections 11anti 1 and 5anti 1anti 1 in InP, GaSb, CdHgTe and sphalerite, thus allowing the non-centrosymmetric point group anti 43 m to be determined. In GaAs, differences in intensities were noted between anti 511 and anti 5anti 11. In chalcopyrite and tetrahedrite, non-equivalent intensities were observed between anti 215 and 2anti 1anti 5 and between 3anti 1anti 2 and 31anti 2, respectively. In addition, BKDPs obtained from chalcopyrite revealed a small displacement at the point where the pair of equivalent reflections anti 406 and 460 intersect within the Kikuchi band 02anti 2. The presence of this displacement together with observation of the breakdown of Friedel's law confirmed the tetragonal point group anti 42m for chalcopyrite. Although the point groups of GaAs, chalcopyrite and tetrahedrite were derived successfully using BKDPs, determination of their space groups proved unsuccessful. The superstructure reflections were invisible because the structure factors are very small. The behaviour of the invisible 200 reflection in GaAs is investigated using many-beam dynamical intensity profiles calculated across the h00 systematic row of reflections. Dynamical intensity profiles calculated across the h00 systematic rows of reflections for Ge, InP and sphalerite are also discussed. (orig.)

  15. Interaction between titanium and sulfuric acid in the electrodeposition of chalcogenide semiconductors

    International Nuclear Information System (INIS)

    Ortega, J.

    1992-01-01

    Some chalcogenide electrodeposition problems in the cathodic potential range from -0.30 V to-0.65 V vs SCE may be related to the Titanium corrosion-passivation process in aqueous solutions of sulfuric acid. This feature was discovered accidentally when it was attempted to electrodeposit Cd-Hg-Te compounds from a ternary plating bath; an anodic current of about 10 m/cm 2 was produced in the Titanium cathode at -0.50 V vs SCE, while at -0.40 and -0.60 V vs SCE the current was cathodic. In order to explain this feature, a first study has been carried out to determine the influence of the temperature and sulfuric acid concentration on the passivation current density, passivation potential and Flade potential for passivation. From Arrhenius plots of the passivation currents an apparent activation energy of 63.8 kJ/mole for Titanium passivation in sulfuric acid at -0.50 V vs SCE was obtained. The electrochemical stability of passivated Titanium was explained by assuming that the oxide film formed exhibits n-type semiconducting character, since passivation data was in good agreement with interfacial energetics for n-TiO 2 in aqueous solutions of sulfuric acid.(Author)

  16. Origins of Stokes shift in PbS nanocrystals

    KAUST Repository

    Voznyy, Oleksandr

    2017-10-27

    Stokes shift, an energy difference between the excitonic absorption and emission, is a property of colloidal quantum dots (CQDs) typically ascribed to splitting between dark and bright excitons. In some materials, e.g., PbS, CuInS2, CdHgTe, a Stokes shift of up to 200 meV is observed, substantially larger than the estimates of dark-bright state splitting or vibronic relaxations. The shift origin remains highly debated, as contradictory signatures of both surface and bulk character were reported for the Stokes-shifted electronic state. Here we show that the energy transfer among CQDs in a polydispersed ensemble in solution suffices to explain the excess Stokes shift. This energy transfer is primarily due to CQD aggregation, and can be substantially eliminated by extreme dilution, higher-viscosity solvent, or better-dispersed colloids. Our findings highlight that ensemble polydispersity remains the primary source of the Stokes shift in CQDs in solution, propagating into the Stokes shift in films and the open-circuit voltage deficit in CQD solar cells. Improved synthetic control can bring notable advancements in CQD photovoltaics, and the Stokes shift continues to provide a sensitive and significant metric to monitor ensemble size distribution.

  17. Flexible and fragmentable tandem photosensitive nanocrystal skins

    Science.gov (United States)

    Akhavan, S.; Uran, C.; Bozok, B.; Gungor, K.; Kelestemur, Y.; Lesnyak, V.; Gaponik, N.; Eychmüller, A.; Demir, H. V.

    2016-02-01

    We proposed and demonstrated the first account of large-area, semi-transparent, tandem photosensitive nanocrystal skins (PNSs) constructed on flexible substrates operating on the principle of photogenerated potential buildup, which avoid the need for applying an external bias and circumvent the current-matching limitation between junctions. We successfully fabricated and operated the tandem PNSs composed of single monolayers of colloidal water-soluble CdTe and CdHgTe nanocrystals (NCs) in adjacent junctions on a Kapton polymer tape. Owing to the usage of a single NC layer in each junction, noise generation was significantly reduced while keeping the resulting PNS films considerably transparent. In each junction, photogenerated excitons are dissociated at the interface of the semi-transparent Al electrode and the NC layer, with holes migrating to the contact electrode and electrons trapped in the NCs. As a result, the tandem PNSs lead to an open-circuit photovoltage buildup equal to the sum of those of the two single junctions, exhibiting a total voltage buildup of 128.4 mV at an excitation intensity of 75.8 μW cm-2 at 350 nm. Furthermore, we showed that these flexible PNSs could be bent over 3.5 mm radius of curvature and cut out in arbitrary shapes without damaging the operation of individual parts and without introducing any significant loss in the total sensitivity. These findings indicate that the NC skins are promising as building blocks to make low-cost, flexible, large-area UV/visible sensing platforms with highly efficient full-spectrum conversion.We proposed and demonstrated the first account of large-area, semi-transparent, tandem photosensitive nanocrystal skins (PNSs) constructed on flexible substrates operating on the principle of photogenerated potential buildup, which avoid the need for applying an external bias and circumvent the current-matching limitation between junctions. We successfully fabricated and operated the tandem PNSs composed of

  18. Strain-engineering of the topological insulator HgTe

    Energy Technology Data Exchange (ETDEWEB)

    Leubner, Philipp

    2017-07-24

    The subject of this thesis is the control of strain in HgTe thin-film crystals. A major task was the experimental control of the strain in the HgTe films. This was achieved by a new epitaxial approach and confirmed by cristallographic analysis and magneto-transport measurements. In this work, strain was induced in thin films by means of coherent epitaxy on substrate crystals. In principle, compressive strain can be achieved by using an appropriate Cd{sub 1-x}Zn{sub x}Te substrate. This concept was modified and applied in this work. Epilayers have been fabricated by molecular-beam epitaxy (MBE). The growth of thick buffer layers of CdTe on GaAs:Si was established as an alternative to commercial CdTe and Cd{sub 0.96}Zn{sub 0.04}Te substrates. Residual strain was found in the buffer layers, and was attributed to a combination of finite layer thickness and mismatch of the thermal expansion coefficients of CdTe and GaAs. CdTe-Cd{sub 0.5}Zn{sub 0.5}Te strained-layer-superlattices have been grown by a combination of MBE and atomic-layer epitaxy (ALE), and have been analyzed by HRXRD. The crystal quality has been found to degrade with increasing Zn-fraction. HgTe quantum wells (QWs) sandwiched in between CdHgTe barriers have been fabricated in a similar fashion on superlattices and conventional CdTe and Cd{sub 0.96}Zn{sub 0.04}Te substrates. We have determined the QW thickness with an accuracy of ±0.5 nm by an analysis of the beating patterns in the thickness fringes of HRXRD measurements and X-ray reflectometry measurements. We have, for the first time, induced compressive strain in HgTe QWs by an epitaxial technique (i.e. the effective lattice constant of the superlattice is lower compared to the lattice constant of HgTe). The problem of the lattice mismatch between superlattice and barriers has been circumvented by using CdHgTe-ZnHgTe superlattices instead of CdHgTe as a barrier material. Furthermore, the growth of compressively strained HgTe bulk layers (with a

  19. Strain-engineering of the topological insulator HgTe

    International Nuclear Information System (INIS)

    Leubner, Philipp

    2017-01-01

    The subject of this thesis is the control of strain in HgTe thin-film crystals. A major task was the experimental control of the strain in the HgTe films. This was achieved by a new epitaxial approach and confirmed by cristallographic analysis and magneto-transport measurements. In this work, strain was induced in thin films by means of coherent epitaxy on substrate crystals. In principle, compressive strain can be achieved by using an appropriate Cd 1-x Zn x Te substrate. This concept was modified and applied in this work. Epilayers have been fabricated by molecular-beam epitaxy (MBE). The growth of thick buffer layers of CdTe on GaAs:Si was established as an alternative to commercial CdTe and Cd 0.96 Zn 0.04 Te substrates. Residual strain was found in the buffer layers, and was attributed to a combination of finite layer thickness and mismatch of the thermal expansion coefficients of CdTe and GaAs. CdTe-Cd 0.5 Zn 0.5 Te strained-layer-superlattices have been grown by a combination of MBE and atomic-layer epitaxy (ALE), and have been analyzed by HRXRD. The crystal quality has been found to degrade with increasing Zn-fraction. HgTe quantum wells (QWs) sandwiched in between CdHgTe barriers have been fabricated in a similar fashion on superlattices and conventional CdTe and Cd 0.96 Zn 0.04 Te substrates. We have determined the QW thickness with an accuracy of ±0.5 nm by an analysis of the beating patterns in the thickness fringes of HRXRD measurements and X-ray reflectometry measurements. We have, for the first time, induced compressive strain in HgTe QWs by an epitaxial technique (i.e. the effective lattice constant of the superlattice is lower compared to the lattice constant of HgTe). The problem of the lattice mismatch between superlattice and barriers has been circumvented by using CdHgTe-ZnHgTe superlattices instead of CdHgTe as a barrier material. Furthermore, the growth of compressively strained HgTe bulk layers (with a thickness of at least 50 nm) was