Sample records for modelocked semiconductor lasers

  1. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...

  2. Dispersion-managed semiconductor mode-locked ring laser. (United States)

    Resan, Bojan; Archundia, Luis; Delfyett, Peter J; Alphonse, Gerard


    A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

  3. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten


    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of......, and ways to reduce high-frequency jitter is discussed. The main result of the thesis is a new design of the epitaxial structure that both enables simplified fabrication and improves the properties of monolithic lasers. 40 GHz monolithic lasers with record low jitter and high power is presented as well...

  4. Theory of Passively Mode-Locked Photonic Crystal Semiconductor Lasers

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper


    We report the first theoretical investigation of passive mode-locking in photonic crystal mode-locked lasers. Related work has investigated coupled-resonator-optical-waveguide structures in the regime of active mode-locking [Opt. Express 13, 4539-4553 (2005)]. An extensive numerical investigation...

  5. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...... application in MLLs. Improved QW laser performance was demonstrated using the asymmetric barrier layer approach. The analysis of the gain characteristics showed that the high population inversion beneficial for noise reduction cannot be achieved for 10 GHz QW MLLs and would have required lowering the modal....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...

  6. Deep-red semiconductor monolithic mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A., E-mail: [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, H. L.; Pan, J. Q. [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang, X. L.; Cui, B. F. [Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124 (China); Ding, Y. [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)


    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  7. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo


    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized.......We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  8. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr


    .... To achieve this, an intracavity Pound-Drever-Hall technique was used on a 10 GHz harmonically mode-locked semiconductor ring laser and obtained a simultaneous optical frequency comb stabilization...

  9. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier (United States)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin


    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  10. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper


    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order...... to improve the mode-locking performance, such as reducing the pulsewidth and time-bandwidth product as much as possible. Timing jitter is determined by means of extensive numerical simulations of the model, demontrating that an external modulation is required in order to maintain moderate timing......-jitter and phase-noise levels at low frequencies. The effect of the driving conditions is investigated in order to achieve short pulses and low timing jitter. Our results are in qualitative agreement with reported experiments and predictions obtained from the master equation for mode-locking....

  11. Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser. (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy


    We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

  12. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy


    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  13. Delay differential equations for mode-locked semiconductor lasers. (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory


    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  14. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper


    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects.......We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  15. Jitter reduction by intracavity active phase modulation in a mode-locked semiconductor laser. (United States)

    Ozharar, Sarper; Ozdur, Ibrahim; Quinlan, Franklyn; Delfyett, Peter J


    We experimentally verify the theory of Haus et al. [IEEE J. Quantum Electron. 40, 41 (2004)] on the effects of timing jitter using intracavity phase modulation on the pulse train of a mode-locked laser. The theory is based on the solution of the Heisenberg-Langevin equation in the presence of dispersion and intracavity phase modulation. Using active intracavity phase modulation, we have reduced the timing jitter on a 10.24 GHz mode-locked diode laser by 50% from 304 to 150 fs integrated from 1 Hz to the Nyquist frequency of 5.12 GHz.

  16. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.


    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  17. Tunable mode-locked semiconductor laser with Bragg mirror external cavity

    DEFF Research Database (Denmark)

    Yvind, Kresten; Jørgensen, T.; Birkedal, Dan


    We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have...

  18. Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Christoph Doering


    Full Text Available Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.

  19. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection


    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O


    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  20. Mode-locked semiconductor laser for long and absolute distance measurement based on laser pulse repetition frequency sweeping: a comparative study between three types of lasers (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.


    In this work we present a study on three types of semiconductor mode-locked lasers as possible sources for a high precision absolute distance metrology measurement concept based on pulse repetition frequency (PRF) sweep. In this work, we evaluated one vertical emission laser and two transversal emission sources. The topology of the gain element is quantum-well, quantum-dot and quantum-dash, respectively. Only the vertical emission laser has optical pump, whilst the others operate with electric pumping. The quantum-dash laser does not have a saturable absorber in its configuration but relies on a dispersion compensating fiber for generating pulses. The bottleneck of vertical emission laser is his high power density pump (4.5W/165μm), increasing the vulnerability of damaging the gain element. The other lasers, i.e., the single (quantum-dash) and double section (quantum-dot) lasers present good results either in terms of applicability to the metrology system or in terms of robustness. Using RF injection on the gain element, both lasers show good PRF stabilization results (better than σy(10ms) = 10-9 ) which is a requirement for the mentioned metrology technique.

  1. Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser. (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Islamova, Elmira; Merget, Florian; Witzens, Jeremy


    Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

  2. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.


    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  3. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten


    Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  4. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    International Nuclear Information System (INIS)

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G


    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  5. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin


    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  6. An automatic mode-locked system for passively mode-locked fiber laser (United States)

    Li, Sha; Xu, Jun; Chen, Guoliang; Mei, Li; Yi, Bo


    This paper designs and implements one kind of automatic mode-locked system. It can adjust a passively mode-locked fiber laser to keep steady mode-locked states automatically. So the unsteadiness of traditional passively mode-locked fiber laser can be avoided. The system transforms optical signals into electrical pulse signals and sends them into MCU after processing. MCU calculates the frequency of the signals and judges the state of the output based on a quick judgment algorithm. A high-speed comparator is used to check the signals and the comparison voltage can be adjusted to improve the measuring accuracy. Then by controlling two polarization controllers at an angle of 45degrees to each other, MCU extrudes the optical fibers to change the polarization until it gets proper mode-locked output. So the system can continuously monitor the output signal and get it back to mode-locked states quickly and automatically. States of the system can be displayed on the LCD and PC. The parameters of the steady mode-locked states can be stored into an EEPROM so that the system will get into mode-locked states immediately next time. Actual experiments showed that, for a 6.238MHz passively mode-locked fiber lasers, the system can get into steady mode-locked states automatically in less than 90s after starting the system. The expected lock time can be reduced to less than 20s after follow up improvements.

  7. Low-jitter and high-power 40 GHz all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin


    A novel design strategy for the epitaxial structure of monolithic mode-locked semiconductor lasers is presented. Using an all-active design, we fabricate 40-GHz lasers generating 2.8-ps almost chirp-free pulses with record low high-frequency jitter and more than 7-mW fiber coupled output power....

  8. Class-A mode-locked lasers: Fundamental solutions (United States)

    Kovalev, Anton V.; Viktorov, Evgeny A.


    We consider a delay differential equation (DDE) model for mode-locked operation in class-A semiconductor lasers containing both gain and absorber sections. The material processes are adiabatically eliminated as these are considered fast in comparison to the delay time for a long cavity device. We determine the steady states and analyze their bifurcations using DDE-BIFTOOL [Engelborghs et al., ACM Trans. Math. Software 28, 1 (2002)]. Multiple forms of coexistence, transformation, and hysteretic behavior of stable steady states and fundamental periodic regimes are discussed in bifurcation diagrams.

  9. Widely tunable all-fiber SESAM mode-locked Ytterbium laser with a linear cavity (United States)

    Zou, Feng; Wang, Zhaokun; Wang, Ziwei; Bai, Yang; Li, Qiurui; Zhou, Jun


    We present a widely tunable all-fiber mode-locked laser based on semiconductor saturable absorber mirror (SESAM) with a linear cavity design. An easy-to-use tunable bandpass filter based on thin film cavity technology is employed to tune the wavelength. By tuning the filter and adjusting the polarization controller, mode-locked operation can be achieved over the range of 1023 nm-1060 nm. With the polarization controller settled, mode-locked operation can be preserved and the wavelength can be continuously tuned from 1030 nm to 1053 nm. At 1030 nm, the laser delivers 9.6 mw average output power with 15.4 ps 10.96 MHz pulses at fundamental mode-locked operation.

  10. Actively mode-locked Raman fiber laser. (United States)

    Yang, Xuezong; Zhang, Lei; Jiang, Huawei; Fan, Tingwei; Feng, Yan


    Active mode-locking of Raman fiber laser is experimentally investigated for the first time. An all fiber connected and polarization maintaining loop cavity of ~500 m long is pumped by a linearly polarized 1120 nm Yb fiber laser and modulated by an acousto-optic modulator. Stable 2 ns width pulse train at 1178 nm is obtained with modulator opening time of > 50 ns. At higher power, pulses become longer, and second order Raman Stokes could take place, which however can be suppressed by adjusting the open time and modulation frequency. Transient pulse evolution measurement confirms the absence of relaxation oscillation in Raman fiber laser. Tuning of repetition rate from 392 kHz to 31.37 MHz is obtained with harmonic mode locking.

  11. Semiconductor Laser Measurements Laboratory (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  12. Control of fibre laser mode-locking by narrow-band Bragg gratings

    International Nuclear Information System (INIS)

    Laegsgaard, J


    The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

  13. Semiconductor film Cherenkov lasers (United States)

    Walsh, John E.


    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  14. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.


    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  15. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David


    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  16. Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser (United States)

    Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.


    Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

  17. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko


    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  18. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.


    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  19. Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Hvam, Jørn Märcher


    We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design...... prediction, concerning noise versus number of QWs, for the first time corroborated by experiments. A minimum jitter of 44 fs is found, by extrapolating to the Nyquist frequency, for the one-QW device having nearly transform-limited pulses of 1.2 ps. This jitter is nearly three times lower than for a three...

  20. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild


    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  1. Dispersion engineering of mode-locked fibre lasers (United States)

    Woodward, R. I.


    Mode-locked fibre lasers are important sources of ultrashort pulses, where stable pulse generation is achieved through a balance of periodic amplitude and phase evolutions. A range of distinct cavity pulse dynamics have been revealed, arising from the interplay between dispersion and nonlinearity in addition to dissipative processes such as filtering. This has led to the discovery of numerous novel operating regimes, offering significantly improved laser performance. In this Topical Review, we summarise the main steady-state pulse dynamics reported to date through cavity dispersion engineering, including average solitons, dispersion-managed solitons, dissipative solitons, giant-chirped pulses and similaritons. Characteristic features and the stabilisation mechanism of each regime are described, supported by numerical modelling, in addition to the typical performance and limitations. Opportunities for further pulse energy scaling are discussed, in addition to considering other recent advances including automated self-tuning cavities and fluoride-fibre-based mid-infrared mode-locked lasers.

  2. Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina; Larsson, David; Semenova, Elizaveta


    We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.......We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated....

  3. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W


    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  4. Commercial mode-locked vertical external cavity surface emitting lasers (United States)

    Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Head, C. Robin; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.


    In recent years, M Squared Lasers have successfully commercialized a range of mode-locked vertical external cavity surface emitting lasers (VECSELs) operating between 920-1050nm and producing picosecond-range pulses with average powers above 1W at pulse repetition frequencies (PRF) of 200MHz. These laser products offer a low-cost, easy-to-use and maintenance-free tool for the growing market of nonlinear microscopy. However, in order to present a credible alternative to ultrafast Ti-sapphire lasers, pulse durations below 200fs are required. In the last year, efforts have been directed to reduce the pulse duration of the Dragonfly laser system to below 200fs with a target average power above 1W at a PRF of 200MHz. This paper will describe and discuss the latest efforts undertaken to approach these targets in a laser system operating at 990nm. The relatively low PRF operation of Dragonfly lasers represents a challenging requirement for mode-locked VECSELs due to the very short upper state carrier lifetime, on the order of a few nanoseconds, which can lead to double pulsing behavior in longer cavities as the time between consecutive pulses is increased. Most notably, the design of the Dragonfly VECSEL cavity was considerably modified and the laser system extended with a nonlinear pulse stretcher and an additional compression stage. The improved Dragonfly laser system achieved pulse duration as short as 130fs with an average power of 0.85W.

  5. A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

    International Nuclear Information System (INIS)

    Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng


    A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

  6. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel


    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  7. Modeling of mode-locked coupled-resonator optical waveguide lasers

    DEFF Research Database (Denmark)

    Agger, Christian; Skovgård, Troels Suhr; Gregersen, Niels


    Coupled-resonator optical waveguides made from coupled high-Q photonic crystal nanocavities are investigated for use as cavities in mode-locked lasers. Such devices show great potential in slowing down light and can serve to reduce the cavity length of a mode-locked laser. An explicit expression...

  8. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui


    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  9. Characterization of a FBG sensor interrogation system based on a mode-locked laser scheme. (United States)

    Madrigal, Javier; Fraile-Peláez, Francisco Javier; Zheng, Di; Barrera, David; Sales, Salvador


    This paper is focused on the characterization of a fiber Bragg grating (FBG) sensor interrogation system based on a fiber ring laser with a semiconductor optical amplifier as the gain medium, and an in-loop electro-optical modulator. This system operates as a switchable active (pulsed) mode-locked laser. The operation principle of the system is explained theoretically and validated experimentally. The ability of the system to interrogate an array of different FBGs in wavelength and spatial domain is demonstrated. Simultaneously, the influence of several important parameters on the performance of the interrogation technique has been investigated. Specifically, the effects of the bandwidth and the reflectivity of the FBGs, the SOA gain, and the depth of the intensity modulation have been addressed.

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro


    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Mode-locked silicon evanescent lasers. (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E


    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  12. Optical flip-flop: Based on two-coupled mode-locked ring lasers

    NARCIS (Netherlands)

    Tangdiongga, E.; Yang, X.X.; Li, Z.; Liu, Y.S.; Lenstra, D.; Khoe, G.D.; Dorren, H.J.S.


    We report an all-optical flip-flop that is based on two coupled actively mode-locked fiber ring lasers. The lasers are coupled so that when one of the lasers lases, it quenches lasing in the other laser. The state of the flip-flop is determined by the wavelength of the laser that is currently

  13. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.


    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  14. Mode-locked terahertz quantum cascade laser by direct phase synchronization

    International Nuclear Information System (INIS)

    Maussang, K.; Maysonnave, J.; Jukam, N.; Freeman, J. R.; Cavalié, P.; Dhillon, S. S.; Tignon, J.; Khanna, S. P.; Linfield, E. H.; Davies, A. G.; Beere, H. E.; Ritchie, D. A.


    Mode-locking of a terahertz quantum cascade laser is achieved using multimode injection seeding. Contrary to standard methods that rely on gain modulation, here a fixed phase relationship is directly imprinted to the laser modes. In this work, we demonstrate the generation of 9 ps phase mode-locked pulses around 2.75 THz. A direct measurement of the emitted field phase shows that it results from the phase of the initial injection

  15. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej


    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  16. Compact mode-locked diode laser system for high precision frequency comparisons in microgravity (United States)

    Christopher, H.; Kovalchuk, E. V.; Wicht, A.; Erbert, G.; Tränkle, G.; Peters, A.


    Nowadays cold atom-based quantum sensors such as atom interferometers start leaving optical labs to put e.g. fundamental physics under test in space. One of such intriguing applications is the test of the Weak Equivalence Principle, the Universality of Free Fall (UFF), using different quantum objects such as rubidium (Rb) and potassium (K) ultra-cold quantum gases. The corresponding atom interferometers are implemented with light pulses from narrow linewidth lasers emitting near 767 nm (K) and 780 nm (Rb). To determine any relative acceleration of the K and Rb quantum ensembles during free fall, the frequency difference between the K and Rb lasers has to be measured very accurately by means of an optical frequency comb. Micro-gravity applications not only require good electro-optical characteristics but are also stringent in their demand for compactness, robustness and efficiency. For frequency comparison experiments the rather complex fiber laser-based frequency comb system may be replaced by one semiconductor laser chip and some passive components. Here we present an important step towards this direction, i.e. we report on the development of a compact mode-locked diode laser system designed to generate a highly stable frequency comb in the wavelength range of 780 nm.

  17. $CO_{2}$ laser ion source Comparison between mode-locked and free- running laser beams

    CERN Document Server

    Lisi, N; Scrivens, R


    The production of highly charged ions in a CO/sub 2/ laser-generated plasma is compared for different laser pulse-time structures. The work was performed at the CERN Laser Ion Source, which has the aim of developing a high current, high charge-state ion source for the Large Hadron Collider (LHC). When an intense laser pulse is focused onto a high-Z metal target, the ions expanding in the plasma plume are suitable for extraction from the plasma and matching into a synchrotron. For the first time, a comparison is made between free- running pulses with randomly fluctuating intensity, and mode-locked pulse trains with a reproducible structure and the same energy. Despite the lower power density with respect to the mode-locked pulse train, the free-running pulse provides higher charge states and higher yield. (10 refs).

  18. Active-passively mode-locked dye laser for diagnosis of laser-produced plasmas

    International Nuclear Information System (INIS)

    Teng, Y.L.; Fedosejevs, R.; Sigel, R.


    In this report an active-passively mode-locked, flashlamp-pumped dye laser for diagnosis of laser-produced plasmas is described. This dye laser system used as a pulsed light source for high-speed photography of laser-target experiments was synchronized to the ASTERIX III iodine laser pulse with better than 100 ps accuracy. The single pulse energy was 10 μJ, pulse duration less than 10 ps. In 111 shots clear shadowgrams were obtained during a total of 151 target shots, i.e. the system worked well in 74% of the shots. (orig.)

  19. Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber. (United States)

    Jimenez-Rodriguez, M; Monteagudo-Lerma, L; Monroy, E; González-Herráez, M; Naranjo, F B


    The growing demand of ultrafast mode-locked fiber lasers in the near infrared has boosted the research activity in this area. One of the most convenient ways to achieve passive mode locking consists of inserting a semiconductor saturable absorber in the laser cavity to modulate the losses. However, in such a configuration, the limited power range of operation is still an unsolved issue. Here we report the fabrication of an ultrafast, high-power, widely power-tunable and non-polarization-dependent mode-locked fiber laser operating at 1.55 µm, using an InN layer as saturable absorber. With post-amplification, this laser delivers 55-fs pulses with a repetition rate of 4.84 MHz and peak power in the range of 1 MW in an all-fiber arrangement.

  20. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.


    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  1. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong


    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  2. Deep learning and model predictive control for self-tuning mode-locked lasers (United States)

    Baumeister, Thomas; Brunton, Steven L.; Nathan Kutz, J.


    Self-tuning optical systems are of growing importance in technological applications such as mode-locked fiber lasers. Such self-tuning paradigms require {\\em intelligent} algorithms capable of inferring approximate models of the underlying physics and discovering appropriate control laws in order to maintain robust performance for a given objective. In this work, we demonstrate the first integration of a {\\em deep learning} (DL) architecture with {\\em model predictive control} (MPC) in order to self-tune a mode-locked fiber laser. Not only can our DL-MPC algorithmic architecture approximate the unknown fiber birefringence, it also builds a dynamical model of the laser and appropriate control law for maintaining robust, high-energy pulses despite a stochastically drifting birefringence. We demonstrate the effectiveness of this method on a fiber laser which is mode-locked by nonlinear polarization rotation. The method advocated can be broadly applied to a variety of optical systems that require robust controllers.

  3. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

    DEFF Research Database (Denmark)

    Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta


    This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser...

  4. Mode-locked Pr3+-doped silica fiber laser with an external cavity

    DEFF Research Database (Denmark)

    Shi, Yuan; Poulsen, Christian; Sejka, Milan


    We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...

  5. Soliton generation from a fundamentally mode-locked fiber laser with a feed-forward path (United States)

    Wang, Ruixin; Dai, Yitang; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong


    We demonstrate for the first time to our knowledge, the soliton generation from a mode-locked erbium-doped fiber laser using a novel saturable absorber (SA), which is realized by combining a dual-drive modulator and an intensity feed-forward path. The laser is fundamentally mode-locked under high-frequency RF signal modulation. Experimentally, the actively mode-locked laser produces a 16.7 MHz repetition rate pulse train with a 1.4 ps pulse width, and the spectrum bandwidth is 2.17 nm. The results demonstrate that the SA supports soliton pulse shaping in the cavity at the fundamental frequency.

  6. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin


    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and -coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and -coupled power of 7 mW....

  7. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin


    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW....

  8. Pulse properties of external cavity mode locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Kroh, Marcel; Mørk, Jesper


    The performance of an external-cavity mode-locked semiconductor laser is investigated both theoretically and experimentally. The optimization analysis focuses on the regimes of stable mode locking and the generation of sub-picosecond optical pulses. We demonstrate stable output pulses down to one...... picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model.We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation...

  9. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji


    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  10. Multiwavelength mode-locked cylindrical vector beam fiber laser based on mode selective coupler (United States)

    Huang, Ping; Cai, Yu; Zhang, Zuxing


    We propose and demonstrate a multiwavelength mode-locked fiber laser with cylindrical vector beam generation for the first time, to the best of our knowledge. The mode-locking mechanism is nonlinear polarization rotation, and the multiwavelength operation is contributed to the in-line birefringence fiber filter with periodic multiple passbands formed by incorporating a section of polarization maintaining fiber into the laser cavity with a polarizer. Furthermore, using the mode selective coupler, which acts as mode converter from fundamental mode to higher-order mode, multiwavelength mode-locked cylindrical vector beams have been obtained, which may have potential applications in mode-division multiplexing optical fiber communication and material processing.

  11. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.


    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  12. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry


    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  13. High peak power sub-nanosecond mode-locked pulse characteristics of Nd:GGG laser (United States)

    Zhao, Jia; Zhao, Shengzhi; Li, Tao; Li, Yufei; Yang, Kejian; Li, Guiqiu; Li, Dechun; Qiao, Wenchao; Feng, Chuansheng; Wang, Yonggang


    Based on the dual-loss modulation, i.e. electro-optic (EO) modulator and GaAs saturable absorber, a sub-nanosecond mode-locked pulsed Nd:GGG laser with kHz repetition rates is presented for the first time. The repetition rate (0.5-10 kHz) of this pulsed laser is controlled by the modulation rate of EO modulator, so high stability can be obtained. The sub-nanosecond pulse width depends on the mode-locked pulse underneath the Q-switched envelope in the Q-switched mode-locked (QML) laser and high peak power can be generated. The condition on the generation of sub-nanosecond pulse and the needed threshold power for different modulation rates of EO are given. The average output power, the pulse width and the peak power versus pump power for different repetition rates are demonstrated. The shortest pulse width is 426 ps and the highest peak power reaches 239.4 kW. The experimental results show that the dual-loss modulation technology with EO and GaAs saturable absorber in QML laser is an efficient method to generate sub-nanosecond mode-locked pulsed laser with kHz repetition rates.

  14. Three-dimensional graphene based passively mode-locked fiber laser. (United States)

    Yang, Y; Loeblein, M; Tsang, S H; Chow, K K; Teo, E H T


    We present an all-fiber passively mode-locked fiber laser incorporating three-dimensional (3D) graphene as a saturable absorber (SA) for the first time to the best of our knowledge. The 3D graphene is synthesized by template-directed chemical vapor deposition (CVD). The SA is then simply formed by sandwiching the freestanding 3D graphene between two conventional fiber connectors without any deposition process. It is demonstrated that such 3D graphene based SA is capable to produce high quality mode-locked pulses. A passively mode-locked fiber laser is constructed and stable output pulses with a fundamental repetition rate of ~9.9 MHz and a pulse width of ~1 ps are generated from the fiber laser. The average output power of the laser is ~10.5 mW while the output pulse is operating at single pulse region. The results imply that the freestanding 3D graphene can be applied as an effective saturable absorption material for passively mode-locked lasers.

  15. Scalar-vector soliton fiber laser mode-locked by nonlinear polarization rotation. (United States)

    Wu, Zhichao; Liu, Deming; Fu, Songnian; Li, Lei; Tang, Ming; Zhao, Luming


    We report a passively mode-locked fiber laser by nonlinear polarization rotation (NPR), where both vector and scalar soliton can co-exist within the laser cavity. The mode-locked pulse evolves as a vector soliton in the strong birefringent segment and is transformed into a regular scalar soliton after the polarizer within the laser cavity. The existence of solutions in a polarization-dependent cavity comprising a periodic combination of two distinct nonlinear waves is first demonstrated and likely to be applicable to various other nonlinear systems. For very large local birefringence, our laser approaches the operation regime of vector soliton lasers, while it approaches scalar soliton fiber lasers under the condition of very small birefringence.

  16. All-fiber nonlinearity- and dispersion-managed dissipative soliton nanotube mode-locked laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Nanjing University of Posts and Communications, Nanjing 210003 (China); Popa, D., E-mail:; Wittwer, V. J.; Milana, S.; Hasan, T.; Jiang, Z.; Ferrari, A. C. [Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Ilday, F. Ö. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)


    We report dissipative soliton generation from an Yb-doped all-fiber nonlinearity- and dispersion-managed nanotube mode-locked laser. A simple all-fiber ring cavity exploits a photonic crystal fiber for both nonlinearity enhancement and dispersion compensation. The laser generates stable dissipative solitons with large linear chirp in the net normal dispersion regime. Pulses that are 8.7 ps long are externally compressed to 118 fs, outperforming current nanotube-based Yb-doped fiber laser designs.

  17. The effect of transverse multi-mode oscillation in passively modelocked solid-state lasers (United States)

    Agnesi, A.; Reali, G. C.; Gabetta, G.


    We demonstrate that the pulses from a passively mode-locked flashlamp pumped solid-state laser can be considerably shorter using an antiresonant-ring mirror than using a linear cavity with a standard contacted dye-cell mirror, and we suggest that transverse-mode-filtering effects in the antiresonant ring play an important role in explaining this difference.

  18. Effects of resonator input power on Kerr lens mode-locked lasers

    Indian Academy of Sciences (India)

    Abstract. Using the ABCD matrix method, the common stability region between the sagittal and tangential planes of a four-mirror Kerr lens mode-locked (KLM) laser cavity is obtained for different ranges of input power. In addition, the effect of the input power on the Kerr lens sensitivity is investigated. Optimal input power and ...

  19. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.


    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  20. The Proper Orthogonal Decomposition for Dimensionality Reduction in Mode-Locked Lasers and Optical Systems

    Directory of Open Access Journals (Sweden)

    Eli Shlizerman


    energy delivered per pulse. Managing the nonlinear penalties in the cavity becomes crucial for increasing the energy and suppressing the multipulsing instability. A proper orthogonal decomposition (POD allows for the reduction of governing equations of a mode-locked laser onto a low-dimensional space. The resulting reduced system is able to capture correctly the experimentally observed pulse transitions. Analysis of these models is used to explain the sequence of bifurcations that are responsible for the multipulsing instability in the master mode-locking and the waveguide array mode-locking models. As a result, the POD reduction allows for a simple and efficient way to characterize and optimize the cavity parameters for achieving maximal energy output.

  1. Harmonic Mode-Locked Fiber Laser based on Photonic Crystal Fiber Filled with Topological Insulator Solution

    Directory of Open Access Journals (Sweden)

    Yu-Shan Chen


    Full Text Available We reported that the photonic crystal fiber (PCF filled with TI:Bi2Te3 nanosheets solution could act as an effective saturable absorber (SA. Employing this TI-PCF SA device; we constructed an ytterbium-doped all-fiber laser oscillator and achieved the evanescent wave mode-locking operation. Due to the large cavity dispersion; the fundamental mode-locking pulse had the large full width at half maximum (FWHM of 2.33 ns with the repetition rate of ~1.11 MHz; and the radio frequency (RF spectrum with signal-to-noise ratio (SNR of 61 dB. In addition; the transition dynamics from a bunched state of pulses to harmonic mode-locking (HML was also observed; which was up to 26th order.

  2. Effect of periodic optical pumping on dynamics of passive mode-locked fiber laser (United States)

    Lee, Chung Ghiu; Kim, Joonyoung; Kim, Soeun


    We report on the effect of periodic optical pumping on a passively mode-locked fiber laser (MLFL) based on an erbium-doped fiber (EDF). We investigate the influence of various parameters (including average pump power into the fiber laser, the modulation frequency and duty cycle of the pump, and the polarization state of the light inside the cavity) on the transient response characteristic of the MLFL such as: relaxation oscillation (RO) build-up time (defined as the time delay from the onset of pumping to the generation of passively mode-locked pulses) and the power of the detected RF signal at the fundamental cavity-mode frequency (determined by the ring cavity length), which reflects the stability of mode-locking pulse train. We have found that the RO build-up time is inversely proportional to the average pump power while the RF power of the detected fundamental cavity mode (produced by the ring cavity) is proportional to the average pump power. A change in the duty cycle effectively leads the average pump power to vary, which in turn leads to changes in the transient response. The modulation frequency of the pump is rather related to the stability of the MLFL than its response time. Generally, the lower the modulation frequency, the more stable the mode-locked pulses generated in the fiber laser. Finally, the RO build-up time and, consequently, the pulse-generation time are highly sensitive to the state of polarization in the MLFL cavity.

  3. Observation of Coexisting Dissipative Solitons in a Mode-Locked Fiber Laser. (United States)

    Bao, Chengying; Chang, Wonkeun; Yang, Changxi; Akhmediev, Nail; Cundiff, Steven T


    We show, experimentally and numerically, that a mode-locked fiber laser can operate in a regime where two dissipative soliton solutions coexist and the laser will periodically switch between the solutions. The two dissipative solitons differ in their pulse energy and spectrum. The switching can be controlled by an external perturbation and triggered even when switching does not occur spontaneously. Numerical simulations unveil the importance of the double-minima loss spectrum and nonlinear gain to the switching dynamics.

  4. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications (United States)

    Chi, Yu-Chieh; Lin, Gong-Ru


    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 105, pulsed carrier is also employed for the application in a 10 Gbit s-1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on-off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of -17 and -15.2 dBm at a bit error rate of 10-9, respectively.

  5. Femtosecond Mode-locked Fiber Laser at 1 μm Via Optical Microfiber Dispersion Management. (United States)

    Wang, Lizhen; Xu, Peizhen; Li, Yuhang; Han, Jize; Guo, Xin; Cui, Yudong; Liu, Xueming; Tong, Limin


    Mode-locked Yb-doped fiber lasers around 1 μm are attractive for high power applications and low noise pulse train generation. Mode-locked fiber lasers working in soliton and stretched-pulse regime outperform others in terms of the laser noise characteristics, mechanical stability and easy maintenance. However, conventional optical fibers always show a normal group velocity dispersion around 1 μm, leading to the inconvenience for necessary dispersion management. Here we show that optical microfibers having a large anomalous dispersion around 1 μm can be integrated into mode-locked Yb-doped fiber lasers with ultralow insertion loss down to -0.06 dB, enabling convenient dispersion management of the laser cavity. Besides, optical microfibers could also be adopted to spectrally broaden and to dechirp the ultrashort pulses outside the laser cavity, giving rise to a pulse duration of about 110 fs. We believe that this demonstration may facilitate all-fiber format high-performance ultrashort pulse generation at 1 μm and may find applications in precision measurements, large-scale facility synchronization and evanescent-field-based optical sensing.

  6. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.


    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  7. Tungsten diselenide for mode-locked erbium-doped fiber lasers with short pulse duration (United States)

    Liu, Wenjun; Liu, Mengli; OuYang, Yuyi; Hou, Huanran; Ma, Guoli; Lei, Ming; Wei, Zhiyi


    In this paper, a WSe2 film prepared by chemical vapor deposition (CVD) is transferred onto a tapered fiber, and a WSe2 saturable absorber (SA) is fabricated. In order to measure the third-order optical nonlinearity of the WSe2, the Z-scan technique is applied. The modulation depth of the WSe2 SA is measured as being 21.89%. Taking advantage of the remarkable nonlinear absorption characteristic of the WSe2 SA, a mode-locked erbium-doped fiber laser is demonstrated at 1557.4 nm with a bandwidth of 25.8 nm and signal to noise ratio of 96 dB. To the best of our knowledge, the pulse duration of 163.5 fs is confirmed to be the shortest compared with previous mode-locked fiber lasers based on transition-metal dichalcogenides SAs. These results indicate that WSe2 is a powerful competitor in the application of ultrashort pulse lasers.

  8. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati


    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  9. Theoretical description of spontaneous pulse formation in a semiconductor microring laser

    International Nuclear Information System (INIS)

    Gil, L.; Columbo, L.


    We theoretically describe the spontaneous formation of stable pulses in a GaAs bulk semiconductor microring laser. These pulses are obtained without active or passive mode locking. We show that the parameter regime associated with their existence is limited on one side by the phase instability of the continuous-wave solution, and on the other side by the failure of Lamb's mode-locking criterion. Bistability between the continuous-wave solution and the spontaneous pulses is observed.

  10. Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

    International Nuclear Information System (INIS)

    Liu, Yuanshan; Zhang, Jian-Guo; Chen, Guofu; Zhao, Wei; Bai, Jing


    We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 µm wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice

  11. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.


    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  12. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.


    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  13. Flexible picosecond thulium-doped fiber laser using the active mode-locking technique. (United States)

    Yin, Ke; Zhang, Bin; Yang, Weiqiang; Chen, He; Chen, Shengping; Hou, Jing


    An all-fiber actively mode-locked thulium-doped fiber laser (AML-TDFL) based on a 10 GHz bandwidth electro-optic intensity modulator (EOM) providing flexible picosecond pulses at 1980 nm is presented. The EOM is driven by electrical pulses rather than traditional sine-wave signals. The repetition rate of output pulses was 21.4 MHz at fundamental mode-locking, which could be scaled up to 1.498 GHz through the 70th order harmonic mode-locking, and the shortest measured output pulse width was 38 ps. Furthermore, the output pulse width could be tuned by either adjusting the modulation frequency with small detuning or changing the width of these driving electrical pulses without frequency detuning. In our work, the stability of these mode-locked pulses obtained from the AML-TDFL was superior; for instance, the measured supermode suppression ratio of 1.498 GHz pulses train was up to 48 dB.

  14. Harmonic mode-locking and sub-round-trip time nonlinear dynamics of electro-optically controlled solid state laser (United States)

    Gorbunkov, M. V.; Maslova, Yu Ya; Petukhov, V. A.; Semenov, M. A.; Shabalin, Yu V.; Tunkin, V. G.


    Harmonic mode-locking in a solid state laser due to optoelectronic control is studied numerically on the basis of two methods. The first one is detailed numeric simulation taking into account laser radiation fine time structure. It is shown that optimally chosen feedback delay leads to self-started mode-locking with generation of desired number of pulses in the laser cavity. The second method is based on discrete maps for short laser pulse energy. Both methods show that the application of combination of positive and negative feedback loops allows to reduce the period of regular nonlinear dynamics down to a fraction of a laser cavity round trip time.

  15. Dark solitons of the power-energy saturation model: application to mode-locked lasers

    International Nuclear Information System (INIS)

    Ablowitz, M J; Nixon, S D; Horikis, T P; Frantzeskakis, D J


    The generation and dynamics of dark solitons in mode-locked lasers is studied within the framework of a nonlinear Schrödinger equation which incorporates power-saturated loss, as well as energy-saturated gain and filtering. Mode-locking into single dark solitons and multiple dark pulses are found by employing different descriptions for the energy and power of the system defined over unbounded and periodic (ring laser) systems. Treating the loss, gain and filtering terms as perturbations, it is shown that these terms induce an expanding shelf around the soliton. The dark soliton dynamics are studied analytically by means of a perturbation method that takes into regard the emergence of the shelves and reveals their importance. (paper)

  16. Universal soliton pattern formations in passively mode-locked fiber lasers. (United States)

    Amrani, Foued; Salhi, Mohamed; Grelu, Philippe; Leblond, Hervé; Sanchez, François


    We investigate multiple-soliton pattern formations in a figure-of-eight passively mode-locked fiber laser. Operation in the anomalous dispersion regime with a double-clad fiber amplifier allows generation of up to several hundreds of solitons per round trip. We report the observation of remarkable soliton distributions: soliton gas, soliton liquid, soliton polycrystal, and soliton crystal, thus indicating the universality of such complexes.

  17. Passively mode-locked laser with an ultra-narrow spectral width (United States)

    Kues, Michael; Reimer, Christian; Wetzel, Benjamin; Roztocki, Piotr; Little, Brent E.; Chu, Sai T.; Hansson, Tobias; Viktorov, Evgeny A.; Moss, David J.; Morandotti, Roberto


    Most mode-locking techniques introduced in the past focused mainly on increasing the spectral bandwidth to achieve ultrashort, sub-picosecond-long coherent light pulses. By contrast, less importance seemed to be given to mode-locked lasers generating Fourier-transform-limited nanosecond pulses, which feature the narrow spectral bandwidths required for applications in spectroscopy, the efficient excitation of molecules, sensing and quantum optics. Here, we demonstrate a passively mode-locked laser system that relies on simultaneous nested cavity filtering and cavity-enhanced nonlinear interactions within an integrated microring resonator. This allows us to produce optical pulses in the nanosecond regime (4.3 ns in duration), with an overall spectral bandwidth of 104.9 MHz—more than two orders of magnitude smaller than previous realizations. The very narrow bandwidth of our laser makes it possible to fully characterize its spectral properties in the radiofrequency domain using widely available GHz-bandwidth optoelectronic components. In turn, this characterization reveals the strong coherence of the generated pulse train.

  18. Large net-normal dispersion Er-doped fibre laser mode-locked with a nonlinear amplifying loop mirror (United States)

    Bowen, Patrick; Erkintalo, Miro; Broderick, Neil G. R.


    We report on an environmentally stable, all-PM-fibre, Er-doped, mode-locked laser with a central wavelength of 1550 nm. Significantly, the laser possesses large net-normal dispersion such that its dynamics are comparable to that of an all-normal dispersion fibre laser at 1 μm with an analogous architecture. The laser is mode-locked with a nonlinear amplifying loop mirror to produce pulses that are externally compressible to 500 fs. Experimental results are in good agreement with numerical simulations.

  19. Delay induced high order locking effects in semiconductor lasers (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.


    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  20. Stability of the mode-locking regime in tapered quantum-dot lasers (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.


    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  1. High-power femtosecond pulse generation in a passively mode-locked Nd:SrLaAlO4 laser (United States)

    Liu, Shan-De; Dong, Lu-Lu; Zheng, Li-He; Berkowski, Marek; Su, Liang-Bi; Ren, Ting-Qi; Peng, Yan-Dong; Hou, Jia; Zhang, Bai-Tao; He, Jing-Liang


    A high optical quality Nd:SrLaAlO4 (Nd:SLA) crystal was grown using the Czochralski method and showed broad fluorescence spectrum with a full width at half maximum value of 34 nm, which is beneficial for generating femtosecond laser pulses. A stable diode-pumped passively mode-locked femtosecond Nd:SLA laser with 458 fs pulse duration was achieved for the first time at a central wavelength of 1077.9 nm. The average output power of the continuous-wave mode-locked laser was 520 mW and the repetition rate was 78.5 MHz.

  2. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji


    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  3. Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    DEFF Research Database (Denmark)

    Pedersen, Niels V.; Jakobsen, Kaj Bjarne; Vaa, Michael


    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product=0.7) 1.5 μm 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...

  4. Mode-Locked 1.5 um Semiconductor Optical Fiber Ring

    DEFF Research Database (Denmark)

    Pedersen, Niels Vagn; Jakobsen, Kaj Bjarne; Vaa, Michael


    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product = 0.7) 1.5 um 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...

  5. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji


    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  6. Chaotic bursting in semiconductor lasers (United States)

    Ruschel, Stefan; Yanchuk, Serhiy


    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  7. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.


    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  8. Dispersive-cavity actively mode-locked fiber laser for stable radio frequency delivery

    International Nuclear Information System (INIS)

    Dai, Yitang; Wang, Ruixin; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong


    We report a novel technique for highly stable transfer of a radio frequency (RF) comb over long optical fiber link, which is highly dispersive and is a part of an actively mode-locked fiber laser. Phase fluctuation along the fiber link, which is mainly induced by physical vibration and temperature fluctuations, is automatically compensated by the self-adapted wavelength shifting. Without phase-locking loop or any tunable parts, stable radio frequency is transferred over a 2-km fiber link, with a time jitter suppression ratio larger than 110. (letter)

  9. Swept source optical coherence microscopy using a Fourier domain mode-locked laser. (United States)

    Huang, Shu-Wei; Aguirre, Aaron D; Huber, Robert A; Adler, Desmond C; Fujimoto, James G


    Swept source optical coherence microscopy (OCM) enables cellular resolution en face imaging as well as integration with optical coherence tomography (OCT) cross sectional imaging. A buffered Fourier domain mode-locked (FDML) laser light source provides high speed, three dimensional imaging. Image resolutions of 1.6 microm x 8 microm (transverse x axial) with a 220 microm x 220 microm field of view and sensitivity higher than 98 dB are achieved. Three dimensional cellular imaging is demonstrated in vivo in the Xenopus laevis tadpole and ex vivo in the rat kidney and human colon.

  10. Multiple-Pulse Operation and Bound States of Solitons in Passive Mode-Locked Fiber Lasers

    Directory of Open Access Journals (Sweden)

    A. Komarov


    Full Text Available We present results of our research on a multiple-pulse operation of passive mode-locked fiber lasers. The research has been performed on basis of numerical simulation. Multihysteresis dependence of both an intracavity energy and peak intensities of intracavity ultrashort pulses on pump power is found. It is shown that the change of a number of ultrashort pulses in a laser cavity can be realized by hard as well as soft regimes of an excitation and an annihilation of new solitons. Bound steady states of interacting solitons are studied for various mechanisms of nonlinear losses shaping ultrashort pulses. Possibility of coding of information on basis of soliton trains with various bonds between neighboring pulses is discussed. The role of dispersive wave emitted by solitons because of lumped intracavity elements in a formation of powerful soliton wings is analyzed. It is found that such powerful wings result in large bounding energies of interacting solitons in steady states. Various problems of a soliton interaction in passive mode-locked fiber lasers are discussed.

  11. Bright-dark rogue wave in mode-locked fibre laser (Conference Presentation) (United States)

    Kbashi, Hani; Kolpakov, Stanislav; Martinez, Amós; Mou, Chengbo; Sergeyev, Sergey V.


    Bright-Dark Rogue Wave in Mode-Locked Fibre Laser Hani Kbashi1*, Amos Martinez1, S. A. Kolpakov1, Chengbo Mou, Alex Rozhin1, Sergey V. Sergeyev1 1Aston Institute of Photonic Technologies, School of Engineering and Applied Science Aston University, Birmingham, B4 7ET, UK , 0044 755 3534 388 Keywords: Optical rogue wave, Bright-Dark rogue wave, rogue wave, mode-locked fiber laser, polarization instability. Abstract: Rogue waves (RWs) are statistically rare localized waves with high amplitude that suddenly appear and disappear in oceans, water tanks, and optical systems [1]. The investigation of these events in optics, optical rogue waves, is of interest for both fundamental research and applied science. Recently, we have shown that the adjustment of the in-cavity birefringence and pump polarization leads to emerge optical RW events [2-4]. Here, we report the first experimental observation of vector bright-dark RWs in an erbium-doped stretched pulse mode-locked fiber laser. The change of induced in-cavity birefringence provides an opportunity to observe RW events at pump power is a little higher than the lasing threshold. Polarization instabilities in the laser cavity result in the coupling between two orthogonal linearly polarized components leading to the emergence of bright-dark RWs. The observed clusters belongs to the class of slow optical RWs because their lifetime is of order of a thousand of laser cavity roundtrip periods. References: 1. D. R. Solli, C. Ropers, P. Koonath,and B. Jalali, Optical rogue waves," Nature, 450, 1054-1057, 2007. 2. S. V. Sergeyev, S. A. Kolpakov, C. Mou, G. Jacobsen, S. Popov, and V. Kalashnikov, "Slow deterministic vector rogue waves," Proc. SPIE 9732, 97320K (2016). 3. S. A. Kolpakov, H. Kbashi, and S. V. Sergeyev, "Dynamics of vector rogue waves in a fiber laser with a ring cavity," Optica, 3, 8, 870, (2016). 5. S. Kolpakov, H. Kbashi, and S. Sergeyev, "Slow optical rogue waves in a unidirectional fiber laser

  12. Packaging of high power semiconductor lasers

    CERN Document Server

    Liu, Xingsheng; Xiong, Lingling; Liu, Hui


    This book introduces high power semiconductor laser packaging design. The characteristics and challenges of the design and various packaging, processing, and testing techniques are detailed by the authors. New technologies, in particular thermal technologies, current applications, and trends in high power semiconductor laser packaging are described at length and assessed.

  13. Measurement of spectral linewidths of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Du Xiaocheng; He Zhengchuan; Tang Sulan


    Based on the van der Pol equation, formulas describing the measurement of spectral linewidths of semiconductor lasers with the delayed self-heterodyne method were deduced and the influence of the spectral parameters on the measurement are given. Experimental results of single frequency semiconductor lasers are reported.

  14. Modeling and characterization of pulse shape and pulse train dynamics in two-section passively mode-locked quantum dot lasers (United States)

    Raghunathan, R.; Mee, J. K.; Crowley, M. T.; Grillot, F.; Kovanis, V.; Lester, L. F.


    A nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, seeded with parameters extracted from the gain and loss spectra of a quantum dot laser, is employed to simulate and study the dynamical regimes of mode-locked operation of the device. The model parameter ranges corresponding to these regimes are then mapped to externally-controllable parameters such as gain current and absorber bias voltage. Using this approach, a map indicating the approximate regions corresponding to fundamental and harmonically mode locked operation is constructed as a function of gain current and absorber bias voltage. This is shown to be a highly useful method of getting a sense of the highest repetition rates achievable in principle with a simple, two-section device, and provides a guideline toward achieving higher repetition rates by simply adjusting external biasing conditions instantaneously while the device is in operation, as opposed to re-engineering the device with additional passive or saturable absorber sections. The general approach could potentially aid the development of numerical modeling techniques aimed at providing a systematic guideline geared toward developing microwave and RF photonic sources for THz applications.

  15. Rogue waves generation via nonlinear soliton collision in multiple-soliton state of a mode-locked fiber laser. (United States)

    Peng, Junsong; Tarasov, Nikita; Sugavanam, Srikanth; Churkin, Dmitry


    We report for the first time, rogue waves generation in a mode-locked fiber laser that worked in multiple-soliton state in which hundreds of solitons occupied the whole laser cavity. Using real-time spatio-temporal intensity dynamics measurements, it is unveiled that nonlinear soliton collision accounts for the formation of rogue waves in this laser state. The nature of interactions between solitons are also discussed. Our observation may suggest similar formation mechanisms of rogue waves in other systems.

  16. Electronic control of different generation regimes in mode-locked all-fibre F8 laser (United States)

    Kobtsev, Sergey; Ivanenko, Aleksey; Kokhanovskiy, Alexey; Smirnov, Sergey


    We demonstrate for the first time an electronically controlled realisation of markedly different generation regimes in a mode-locked all-fibre figure-eight (F8) Yb-doped laser. Electronic adjustment of the ratio of pumping powers of two amplification stages in a nonlinear amplifying loop mirror enables the establishment of stable pulse generation regimes with different degrees of coherence and control over their parameters within relatively broad limits, with the pulse duration range exceeding a factor of two in the picosecond domain for coherent and incoherent pulses, the energy range exceeding an order of magnitude for incoherent pulses (2.2-24.8 nJ) and over a factor of 8 for coherent pulses (1.9-16.2 nJ). Adjustment of the pumping powers allows one to maintain the duration of the coherent pulses and to set their peak power in the range of 32.5-292.5 W. The proposed configuration of electronic control over the radiation parameters of a mode-locked all-fibre F8 laser enables reproducible generation of pulses of different types with specified parameters within a broad range of values.

  17. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber (United States)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu


    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  18. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber (United States)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua


    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  19. Compact 84 GHz passive mode-locked fiber laser using dual-fiber coupled fused-quartz microresonator (United States)

    Liu, Tze-An; Hsu, Yung; Chow, Chi-Wai; Chuang, Yi-Chen; Ting, Wei-Jo; Wang, Bo-Chun; Peng, Jin-Long; Chen, Guan-Hong; Chang, Yuan-Chia


    We propose and demonstrate a compact and portable-size 84-GHz passive mode-locked fiber laser, in which a dual-fiber coupled fused-quartz microresonator is employed as the intracavity optical comb filter as well as the optical nonlinear material for optical frequency comb generation. About eight coherent optical tones can be generated in the proposed fiber laser. The 20-dB bandwidth is larger than 588 GHz. The full-width half-maximum pulse-width of the proposed laser is 2.5 ps. We also demonstrate the feasibility of using the proposed passive mode-locked fiber laser to carry a 5-Gbit/s on-off-keying signal and transmit over 20-km standard single mode fiber. A 7% forward error correction requirement can be achieved, showing the proposed fiber laser can be a potential candidate for fiber-wireless applications.

  20. Towards Laser Cooling of Semiconductors (United States)

    Hassani nia, Iman

    This dissertation reports on novel theoretical concepts as well as experimental efforts toward laser cooling of semiconductors. The use of quantum well system brings the opportunity to engineer bandstructure, effective masses and the spatial distribution of electrons and holes. This permits the incorporation of novel quantum mechanical phenomena to manipulate the temperature change of the material upon light-matter interaction. Inspired by the fact that Coulomb interaction can lead to blueshift of radiation after photo-absorption, the theory of Coulomb assisted laser cooling is proposed and investigated for the first time. In order to design suitable multiple quantum well (MQW) structures with Coulomb interaction a Poisson-Schrodinger solver was devised using MATLAB software. The software is capable of simulating all III-V material compositions and it results have been confirmed experimentally. In the next step, different MQW designs were proposed and optimized to exploit Coulomb interaction for assisting of optical refrigeration. One of the suitable designs with standard InGaAsP/InAlAs/InP layers was used to grow the MQW structures using metal organic vapor deposition (MOCVD). Novel techniques of fabrication were implemented to make suspended structures for detecting ultralow thermal powers. By fabricating accurate thermometers, the temperature changes of the device upon laser absorption were measured. The accurate measurement of the temperature encouraged us to characterize the electrical response of the device as another important tool to promote our understanding of the 4 underlying physical phenomena. This is in addition to the accurate spectral and time-resolved photoluminescence measurements that provided us with a wealth of information about the effects of stress, Auger recombination and excitonic radiance in such structures. As the future works, important measurements for finding the quantum efficiency of the devices via electrical characterization and

  1. Passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm (United States)

    Waritanant, Tanant; Major, Arkady


    A passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm was demonstrated with an intracavity birefringent filter as the wavelength selecting element. The average output powers achieved were 2.17 W and 2.18 W with optical-to-optical efficiency of 19.6% and 19.7%, respectively. The slope efficiencies were more than 31% at both output wavelengths. The pulse durations at the highest average output power were 10.3 ps and 8.4 ps, respectively. We believe that this is the first report of mode locking of a Nd:YVO4 laser operating at 1073 nm or 1085 nm lines.

  2. Cr:ZnS saturable absorber passively Q-switched mode-locking Tm,Ho:LLF laser. (United States)

    Zhang, Xinlu; Luo, Yong; Wang, Tianhan; Dai, Junfeng; Zhang, Jianxin; Li, Jiang; Cui, Jinhui; Huang, Jinjer


    We first report on a diode-end-pumped passively Q-switched mode-locking Tm,Ho:LLF laser at 2053 nm by using a Cr:ZnS saturable absorber. A stable Q-switched mode-locking pulse train with a nearly 100% modulation depth was achieved. The repetition frequency of the Q-switched pulse envelope increased from 0.5 to 12.3 kHz with increasing pump power from 1 to 4.36 W. The maximum average output power of 145 mW was obtained, and the width of the mode-locked pulse was estimated to be less than 682 ps with a 250 MHz repetition frequency within a Q-switched pulse envelope of about 700 ns.

  3. Laser Cooling of 2-6 Semiconductors (United States)


    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  4. Study on guided waves in semiconductor lasers

    International Nuclear Information System (INIS)

    Pudensi, M.A.A.


    In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

  5. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove


    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  6. Cavity-augmented frequency tripling of a continuous wave mode-locked laser

    International Nuclear Information System (INIS)

    McConnell, Gail; Ferguson, Allister I.; Langford, Nigel


    We present a model and experimental investigation of a singly-resonant optical cavity to enhance the nonlinear conversion efficiency of a continuous wave mode-locked all-solid-state laser source to produce an efficient source of ultraviolet radiation. For input pulses of approximately 33 ps duration at 4.4 ns intervals, our model predicts greater than 30% conversion from fundamental to third harmonic which is particularly attractive for fundamental sources of modest average power. Experimentally, we have achieved overall optical conversion efficiencies from fundamental to third harmonic wavelength typically greater than 11%, compared with less than 0.4% in a single pass geometry. We have measured an average power of 320 mW at λ=355 nm at picosecond pulse duration, which corresponds to a generated third harmonic average power of 0.5 W. (author)

  7. Electronic frequency tuning of the acousto-optic mode-locking device of a laser (United States)

    Magdich, L. N.; Balakshy, V. I.; Mantsevich, S. N.


    The effect of the electronic tuning of the acoustic resonances in an acousto-optic mode-locking device of a laser is investigated theoretically and experimentally. The problem of the excitation of a Fabry-Perot acoustic resonator by a plate-like piezoelectric transducer (PET) is solved in the approximation of plane acoustic waves taking into consideration the actual parameters of an RF generator and the elements for matching the PET to the generator. Resonances are tuned by changing the matching inductance that was connected in parallel to the transducer of the acousto-optic cell. The cell used in the experiment was manufactured from fused silica and included a lithium niobate PET. Changes in the matching inductance in the range of 0.025 to 0.2 μH provided the acoustic-resonance frequency tuning by 0.19 MHz, which exceeds the acoustic- resonance half-width.

  8. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Donin, V I; Yakovin, D V; Gribanov, A V [Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)


    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses. (control of laser radiation parameters)

  9. Hybrid silicon mode-locked laser with improved RF power by impedance matching (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John


    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  10. Using graphene nano-particle embedded in photonic crystal fiber for evanescent wave mode-locking of fiber laser. (United States)

    Lin, Yung-Hsiang; Yang, Chun-Yu; Liou, Jia-Hong; Yu, Chin-Ping; Lin, Gong-Ru


    A photonic crystal fiber (PCF) with high-quality graphene nano-particles uniformly dispersed in the hole cladding are demonstrated to passively mode-lock the erbium-doped fiber laser (EDFL) by evanescent-wave interaction. The few-layer graphene nano-particles are obtained by a stabilized electrochemical exfoliation at a threshold bias. These slowly and softly exfoliated graphene nano-particle exhibits an intense 2D band and an almost disappeared D band in the Raman scattering spectrum. The saturable phenomena of the extinction coefficient β in the cladding provides a loss modulation for the intracavity photon intensity by the evanescent-wave interaction. The evanescent-wave mode-locking scheme effectively enlarges the interaction length of saturable absorption with graphene nano-particle to provide an increasing transmittance ΔT of 5% and modulation depth of 13%. By comparing the core-wave and evanescent-wave mode-locking under the same linear transmittance, the transmittance of the graphene nano-particles on the end-face of SMF only enlarges from 0.54 to 0.578 with ΔT = 3.8% and the modulation depth of 10.8%. The evanescent wave interaction is found to be better than the traditional approach which confines the graphene nano-particles at the interface of two SMF patchcords. When enlarging the intra-cavity gain by simultaneously increasing the pumping current of 980-nm and 1480-nm pumping laser diodes (LDs) to 900 mA, the passively mode-locked EDFL shortens its pulsewidth to 650 fs and broadens its spectral linewidth to 3.92 nm. An extremely low carrier amplitude jitter (CAJ) of 1.2-1.6% is observed to confirm the stable EDFL pulse-train with the cladding graphene nano-particle based evanescent-wave mode-locking.

  11. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Y.; Oldenbeuving, R.M.; Klein, E.J.; Lee, C.J.; Song, H.; Khan, M.R.H.; Offerhaus, H.L.; Van der Slot, P.J.M.; Boller, K.J.


    We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 µm wavelength range. The Si3N4/SiO2 glass waveguide circuit comprises two

  12. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Youwen; Oldenbeuving, Ruud; Klein, E.J.; Lee, Christopher James; Song, H.; Khan, M.R.H.; Offerhaus, Herman L.; van der Slot, Petrus J.M.; Boller, Klaus J.; Mackenzie, J.I.; Jelinkova, H.; Taira, T.; Ahmed, M.A.


    abstract .We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 μm wavelength range. The Si3N4/SiO2 glass waveguide circuit

  13. Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser (United States)

    Tu, Meirong; McKee, Michael R.; Pak, Kyung S.; Yu, Nan


    The figure schematically depicts a laboratory setup for determining the optical length of a fiber-optic delay line at a precision greater than that obtainable by use of optical time-domain reflectometry or of mechanical measurement of length during the delay-line-winding process. In this setup, the delay line becomes part of the resonant optical cavity that governs the frequency of oscillation of a mode-locked laser. The length can then be determined from frequency-domain measurements, as described below. The laboratory setup is basically an all-fiber ring laser in which the delay line constitutes part of the ring. Another part of the ring - the laser gain medium - is an erbium-doped fiber amplifier pumped by a diode laser at a wavelength of 980 nm. The loop also includes an optical isolator, two polarization controllers, and a polarizing beam splitter. The optical isolator enforces unidirectional lasing. The polarization beam splitter allows light in only one polarization mode to pass through the ring; light in the orthogonal polarization mode is rejected from the ring and utilized as a diagnostic output, which is fed to an optical spectrum analyzer and a photodetector. The photodetector output is fed to a radio-frequency spectrum analyzer and an oscilloscope. The fiber ring laser can generate continuous-wave radiation in non-mode-locked operation or ultrashort optical pulses in mode-locked operation. The mode-locked operation exhibited by this ring is said to be passive in the sense that no electro-optical modulator or other active optical component is used to achieve it. Passive mode locking is achieved by exploiting optical nonlinearity of passive components in such a manner as to obtain ultra-short optical pulses. In this setup, the particular nonlinear optical property exploited to achieve passive mode locking is nonlinear polarization rotation. This or any ring laser can support oscillation in multiple modes as long as sufficient gain is present to overcome

  14. Semiconductor laser using multimode interference principle (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao


    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  15. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser (United States)

    Donin, V. I.; Yakovin, D. V.; Gribanov, A. V.


    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses.

  16. Single-shot photonic time-stretch digitizer using a dissipative soliton-based passively mode-locked fiber laser. (United States)

    Peng, Di; Zhang, Zhiyao; Zeng, Zhen; Zhang, Lingjie; Lyu, Yanjia; Liu, Yong; Xie, Kang


    We demonstrate a single-shot photonic time-stretch digitizer using a dissipative soliton-based passively mode-locked fiber laser. The theoretical analysis and simulation results indicate that the dissipative soliton-based optical source with a flat spectrum relieves the envelope-induced signal distortion, and its high energy spectral density helps to improve the signal-to-noise ratio, both of which are favorable for simplifying the optical front-end architecture of a photonic time-stretch digitizer. By employing a homemade dissipative soliton-based passively mode-locked erbium-doped fiber laser in a single-shot photonic time-stretch digitizer, an effective number of bits of 4.11 bits under an effective sampling rate of 100 GS/s is experimentally obtained without optical amplification in the link and pulse envelope removing process.

  17. Semiconductor Laser Tracking Frequency Distance Gauge (United States)

    Phillips, James D.; Reasenberg, Robert D.


    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  18. Self-organized compound pattern and pulsation of dissipative solitons in a passively mode-locked fiber laser (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yange; He, Ruijing; Zhao, Jian; Wang, Guangdou; Yang, Guang


    We experimentally observe soliton self-organization and pulsation in a passively mode-locked fiber laser. The optomechanical interaction in the optical fiber is key to the formation of equidistant soliton bunches. These solitons simultaneously undergo a pulsation process with a period corresponding to tens of the cavity round trip time. Using the dispersive Fourier transformation technique, we find that the Kelly sidebands in the shot-to-shot spectra appear periodically, synchronizing with the pulsation.

  19. Broadband Fourier domain mode-locked laser for optical coherence tomography at 1060 nm

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang


    , enable acquisition of densely sampled three-dimensional datasets covering a wide field of view. However, semiconductor optical amplifiers (SOAs)-the typical laser gain media for swept sources-for the 1060nm band could until recently only provide relatively low output power and bandwidth. We have...

  20. Teradiode's high brightness semiconductor lasers (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz


    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  1. Flexible optical clock recovery utilizing a multi-function semiconductor fiber laser (United States)

    Feng, H.; Zhao, W.; Xie, X. P.; Qian, F. C.; Wang, W.; Huang, X.; Hu, H.


    We demonstrate a multi-function fiber laser based on cross-gain modulation in a semiconductor optical amplifier (SOA). Depending on the input signals, the fiber cavity can emit a continuous wave (CW) laser, mode-locked pulses, or act as a clock recovery device. With an extra CW light overcoming the pattern effect in the clock recovery process, a 10-GHz synchronous clock sequence with <0.1 power fluctuation and <120-fs timing jitter is extracted from the transmission return-to-zero data stream. We further analyze the recovered clock properties as a function of the input signal, and find that the clock recovery system presents good stability over a large range of input signal characteristics. The multi-function fiber laser exhibits the advantages of compact configuration and low cost, which is very convenient and attractive for optical communications and signal processing.

  2. High speed engine gas thermometry by Fourier-domain mode-locked laser absorption spectroscopy. (United States)

    Kranendonk, Laura A; An, Xinliang; Caswell, Andrew W; Herold, Randy E; Sanders, Scott T; Huber, Robert; Fujimoto, James G; Okura, Yasuhiro; Urata, Yasuhiro


    We present a novel method for low noise, high-speed, real-time spectroscopy to monitor molecular absorption spectra. The system is based on a rapidly swept, narrowband CW Fourier-domain mode-locked (FDML) laser source for spectral encoding in time and an optically time-multiplexed split-pulse data acquisition system for improved noise performance and sensitivity. An acquisition speed of ~100 kHz, a spectral resolution better than 0.1 nm over a wavelength range of ~1335-1373 nm and a relative noise level of ~5 mOD (~1% minimum detectable base-e absorbance) are achieved. The system is applied for crank-angle-resolved gas thermometry by H(2)O absorption spectroscopy in an engine motoring at 600 and 900 rpm with a precision of ~1%. Influences of various noise sources such as laser phase and intensity noise, trigger and synchronization jitter in the electronic detection system, and the accuracy of available H(2)O absorption databases are discussed.

  3. Mode-locked Tm-doped fiber laser based on iron-doped carbon nitride nanosheets (United States)

    Luo, Yongfeng; Zhou, Yan; Tang, Yulong; Xu, Jianqiu; Hu, Chenxia; Gao, Linfeng; Zhang, Haoli; Wang, Qiang


    Solution based nanosheets of iron-doped graphitic carbon nitrides (Fe-g-CN) have been prepared and their optical properties (both linear and nonlinear) are studied. These two-dimensional (2D) nanosheets show an absorption spectrum extending to over 2 µm, and in particular they possess strong nonlinear (saturable) absorption in the 2 µm spectral region. A saturable absorber (SA) manufactured from 2D Fe-g-CN nanosheets gives a modulation depth and saturation intensity of 12.9% and 8.9 MW cm‑2, respectively. This SA is further used to mode-lock thulium-doped fiber lasers, producing 2 µm laser pulses with a duration of 16.6 ps (dechirped to 2.2 ps), an average power of 96.4 mW, a pulse energy of 6.3 nJ, and a repetition rate of 15.3 MHz. As a new type of 2D nonlinear material with strong modulation capabilities, solution-based Fe-g-CN nanosheets can be potentially integrated into photonic and optoelectrionic devices, particuarly in the 2 µm spectral region.

  4. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter


    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  5. Directly exfoliated and imprinted graphite nano-particle saturable absorber for passive mode-locking erbium-doped fiber laser (United States)

    Lin, G.-R.; Lin, Y.-C.


    By directly brushing and scribing an ultra-thin (face of a FC/APC connector in erbium-doped fiber laser (EDFL), and then imprinting it with the graphite nano-particles exfoliated from a graphite foil, the intra-cavity graphite nano-particle based saturable absorber can be formed to induce passive mode-locking effect in the EDFL. Such a novel approach greatly suppresses the film-thickness induced laser-beam divergent loss to 3.4%, thus enhancing the intra-cavity circulating power to promote the shortening on mode-locking pulsewidth. The saturable absorber with area coverage ratio of graphite nano-particles is detuned from 70 to 25% to provide the modulation depth enhancing from 11 to 20% and the saturated transmittance from 27 to 60%. Optimizing the coverage ratio reduces the non-saturable loss to 40% and enhances the modulation depth to 21%, such that the sub-ps soliton mode-locking can be initiated to provide a chirped pulsewidth of 482 fs and a linewidth of 2.87 nm.

  6. Diverse mode of operation of an all-normal-dispersion mode-locked fiber laser employing two nonlinear loop mirrors. (United States)

    Chowdhury, Sourav Das; Pal, Atasi; Chatterjee, Sayan; Sen, Ranjan; Pal, Mrinmay


    In this paper, we propose an all-normal-dispersion ytterbium-fiber laser with a novel ring cavity architecture having two nonlinear amplifying loop mirrors (NALM) as saturable absorbers, capable of delivering distinctly different pulses with adjustable features. By optimizing the loop lengths of the individual NALMs, the cavity can be operated to deliver Q-switched mode-locked (Q-ML) pulse bunches with adjustable repetition rates, mode-locked pulses in dissipative soliton resonance (DSR) regime or noise-like pulse (NLP) regime with tunable pulse width. The DSR pulses exhibit characteristic narrowband spectrum, while the NLPs exhibit large broadband spectrum. The operation regime of the laser can be controlled by adjusting the amplifier pump powers and the polarization controllers. To the best of the authors' knowledge, this is the first demonstration of a single mode-locked cavity where narrowband DSR pulses and broadband NLPs alongside Q-ML pulse bunches can be selectively generated by employing two NALMs.

  7. 256 fs, 2 nJ soliton pulse generation from MoS2 mode-locked fiber laser (United States)

    Jiang, Zike; Chen, Hao; Li, Jiarong; Yin, Jinde; Wang, Jinzhang; Yan, Peiguang


    We demonstrate an Er-doped fiber laser (EDFL) mode-locked by a MoS2 saturable absorber (SA), delivering a 256 fs, 2 nJ soliton pulse at 1563.4 nm. The nonlinear property of the SA prepared by magnetron sputtering deposition (MSD) is measured with a modulation depth (MD) of ∼19.48% and a saturable intensity of 4.14 MW/cm2. To the best of our knowledge, the generated soliton pulse has the highest pulse energy of 2 nJ among the reported mode-locked EDFLs based on transition metal dichalcogenides (TMDs). Our results indicate that MSD-grown SAs could offer an exciting platform for high pulse energy and ultrashort pulse generation.

  8. Laser cooling in semiconductors (Conference Presentation) (United States)

    Zhang, Jun


    Laser cooling of semiconductor is very important topic in science researches and technological applications. Here we will report our progresses on laser cooling in semiconductors. By using of strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, we observe a net cooling by about 40 K starting from 290 kelvin with 514-nm pumping and about 15 K starting from100 K with 532-nm pumping in a semiconductor using group-II-VI cadmium sulphide nanobelts. We also discuss the thickness dependence of laser cooing in CdS nanobelts, a concept porotype of semiconductor cryocooler and possibility of laser cooling in II-VI semiconductor family including CdSSe、CdSe, CdSe/ZnTe QDs and bulk CdS et al., Beyond II-VI semiconductor, we will present our recent progress in laser cooling of organic-inorganic perovskite materials, which show a very big cooling power and external quantum efficiency in 3D and 2D case. Further more, we demonstrate a resolved sideband Raman cooling of a specific LO phonon in ZnTe, in which only one specific phonon resonant with exciton can be cooled or heated. In the end, we will discuss the nonlinear anti-Stokes Raman and anti-Stokes photoluminescence upcoversion in very low temperature as low as down to liquid 4.2 K. In this case, the anti-Stokes resonance induces a quadratic power denpendece of anti-Stokes Raman and anti-Stokes PL. We proposed a CARS-like process to explain it. This nonlinear process also provides a possible physics picture of ultra-low temperatures phonon assisted photoluminescence and anti-Stokes Raman process.

  9. Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

    International Nuclear Information System (INIS)

    Lin, Y-H; Lin, G-R


    The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

  10. Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang


    While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited output power, and the performance of high-speed Fourier domain mode-locked (FDML) lasers suffers from...

  11. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke


    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  12. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula


    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  13. Femtosecond all-polarization-maintaining fiber laser operating at 1028 nm

    DEFF Research Database (Denmark)

    Olsson, R.K.; Andersen, T.V.; Leick, Lasse


    We present an effective solution for an all-polarization-maintaining modelocked femtosecond fiber laser operating at the central wavelength of 1028 nm. The laser is based on an Yb-doped active fiber. Modelocking is enabled by a semiconductor saturable absorber mirror, and the central wavelength...

  14. Design and Applications of In-Cavity Pulse Shaping by Spectral Sculpturing in Mode-Locked Fibre Lasers

    Directory of Open Access Journals (Sweden)

    Sonia Boscolo


    Full Text Available We review our recent progress on the realisation of pulse shaping in passively-mode-locked fibre lasers by inclusion of an amplitude and/or phase spectral filter into the laser cavity. We numerically show that depending on the amplitude transfer function of the in-cavity filter, various regimes of advanced waveform generation can be achieved, including ones featuring parabolic-, flat-top- and triangular-profiled pulses. An application of this approach using a flat-top spectral filter is shown to achieve the direct generation of high-quality sinc-shaped optical Nyquist pulses with a widely tunable bandwidth from the laser oscillator. We also present the operation of an ultrafast fibre laser in which conventional soliton, dispersion-managed soliton (stretched-pulse and dissipative soliton mode-locking regimes can be selectively and reliably targeted by adaptively changing the dispersion profile and bandwidth programmed on an in-cavity programmable filter. The results demonstrate the strong potential of an in-cavity spectral pulse shaper for achieving a high degree of control over the dynamics and output of mode-locked fibre lasers.

  15. Method and system for powering and cooling semiconductor lasers (United States)

    Telford, Steven J; Ladran, Anthony S


    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  16. Laser-based semiconductor fabrication

    International Nuclear Information System (INIS)

    Wachter, J.R.


    This paper discusses research that has concentrated on methods for direct processing of integrated circuits (IC's), such as defect reduction in epitaxial silicon, large grain polysilicon growth, laser-assisted etching and film deposition methods, and removal of dislocation networks

  17. Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity (United States)

    Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.


    The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

  18. Characterisation of the light pulses of a cavity dumped dye laser pumped by a cw mode-locked and q-switched Nd:YAG laser

    International Nuclear Information System (INIS)

    Geist, P.; Heisel, F.; Martz, A.; Miehe, J.A.; Miller, R.J.D.


    The frequency doubled pulses (of 532 nm) obtained, with the help of a KTP crystal, from those delivered by either a continuous wave mode-locked (100 MHz) or mode-locked Q-switched (0-1 KHz) Nd: YAG laser, are analyzed by means of a streak camera, operating in synchroscan or triggered mode. In the step-by-step measurements the pulse stability, concerning form and amplitude, is shown. In addition, measurements effectuated with synchronously pumped and cavity dumped dye laser (Rhodamine 6G), controlled by a Pockels cell, allows the obtention of stable and reproducible single pulses of 30 ps duration, 10 μJ energy and 500Hz frequency [fr

  19. Properties of the pulse train generated by repetition-rate-doubling rational-harmonic actively mode-locked Er-doped fiber lasers. (United States)

    Kiyan, R; Deparis, O; Pottiez, O; Mégret, P; Blondel, M


    We demonstrate for the first time to our knowledge, experimentally and theoretically, that the pulse-to-pulse amplitude fluctuations that occur in pulse trains generated by actively mode-locked Er-doped fiber lasers in a repetition-rate-doubling rational-harmonic mode-locking regime are completely eliminated when the modulation frequency is properly tuned. Irregularity of the pulse position in the train was found to be the only drawback of this regime. One could reduce the irregularity to a value acceptable for applications by increasing the bandwidth of the optical filter installed in the laser cavity.

  20. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.


    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  1. Q-switched-like soliton bunches and noise-like pulses generation in a partially mode-locked fiber laser. (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-Ge; Zhao, Wenjing; Zhang, Hao; Wang, Shangcheng; Yang, Guang; He, Ruijing


    We report an intermediate regime between c.w. emission and noise-like pulses (NLPs) regime in an Er-doped partially mode-locked fiber laser with nonlinear polarization rotation. In this regime, the soliton bunches stochastically turn up from a quasi-cw background in the Q-switched-like envelope. The soliton bunches normally last for tens or hundreds of intracavity round-trips. When the soliton bunches vanish, typical NLPs chains are generated sporadically at location where the soliton bunches collapses. These results would be helpful to understand the generation and property of the NLPs regime.

  2. Asymmetrically excited semiconductor injection laser

    International Nuclear Information System (INIS)

    Ladany, I.; Marinelli, D.P.; Kressel, H.; Cannuli, V.M.


    A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region

  3. Microresonators for organic semiconductor and fluidic lasers


    Vasdekis, Andreas E.


    This thesis describes a number of studies of microstructured optical resonators, designed with the aim of enhancing the performance of organic semiconductor lasers and exploring potential applications. The methodology involves the micro-engineering of the photonic environment in order to modify the pathways of the emitted light and control the feedback mechanism. The research focuses on designing new organic microstructures using established semi-analytical and numerical method...

  4. Soliton compression of the erbium-doped fiber laser weakly started mode-locking by nanoscale p-type Bi2Te3 topological insulator particles (United States)

    Lin, Yung-Hsiang; Yang, Chun-Yu; Lin, Sheng-Feng; Tseng, Wei-Hsuan; Bao, Qiaoliang; Wu, Chih-I.; Lin, Gong-Ru


    We demonstrate the nanoscale p-type Bi2Te3 powder-based saturable absorber-induced passive mode-locking of the erbium-doped fiber laser (EDFL) with sub-picosecond pulsewidth. Such a nanoscale topological insulator powder is obtained by polishing the bulk p-type Bi2Te3 in a commercial thermoelectric cooler (TE cooler). This is then directly brushed onto the end-face of a single-mode fiber patchcord, to avoid any mis-connecting loss caused by laser beam divergence, which can result in a mode-locked pulsewidth of 436 fs in the self-amplitude modulation mode of a TE cooler. To further shorten the pulse, the soliton compression is operated by well-controlling the group delay dispersion and self-phase modulation, providing the passively mode-locked EDFL with a pulsewidth as short as 403 fs.

  5. Resonant activation in bistable semiconductor lasers

    International Nuclear Information System (INIS)

    Lepri, Stefano; Giacomelli, Giovanni


    We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in such optical systems

  6. Squeezing in an injection-locked semiconductor laser (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.


    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  7. Mode-Locked Multichromatic X-Rays in a Seeded Free-Electron Laser for Single-Shot X-Ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Dao; Ding, Yuantao; Raubenheimer, Tor; Wu, Juhao; /SLAC


    We present the promise of generating gigawatt mode-locked multichromatic x rays in a seeded free-electron laser (FEL). We show that, by using a laser to imprint periodic modulation in electron beam phase space, a single-frequency coherent seed can be amplified and further translated to a mode-locked multichromatic output in an FEL. With this configuration the FEL output consists of a train of mode-locked ultrashort pulses which span a wide frequency gap with a series of equally spaced sharp lines. These gigawatt multichromatic x rays may potentially allow one to explore the structure and dynamics of a large number of atomic states simultaneously. The feasibility of generating mode-locked x rays ranging from carbon K edge ({approx}284 eV) to copper L{sub 3} edge ({approx}931 eV) is confirmed with numerical simulation using the realistic parameters of the linac coherent light source (LCLS) and LCLS-II. We anticipate that the mode-locked multichromatic x rays in FELs may open up new opportunities in x-ray spectroscopy (i.e. resonant inelastic x-ray scattering, time-resolved scattering and spectroscopy, etc.).

  8. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm. (United States)

    Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther


    We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

  9. Robust, low-noise, polarization-maintaining mode-locked Er-fiber laser with a planar lightwave circuit (PLC) device as a multi-functional element. (United States)

    Kim, Chur; Kwon, Dohyeon; Kim, Dohyun; Choi, Sun Young; Cha, Sang Jun; Choi, Ki Sun; Yeom, Dong-Il; Rotermund, Fabian; Kim, Jungwon


    We demonstrate a new planar lightwave circuit (PLC)-based device, integrated with a 980/1550 wavelength division multiplexer, an evanescent-field-interaction-based saturable absorber, and an output tap coupler, which can be employed as a multi-functional element in mode-locked fiber lasers. Using this multi-functional PLC device, we demonstrate a simple, robust, low-noise, and polarization-maintaining mode-locked Er-fiber laser. The measured full-width at half-maximum bandwidth is 6 nm centered at 1555 nm, corresponding to 217 fs transform-limited pulse duration. The measured RIN and timing jitter are 0.22% [10 Hz-10 MHz] and 6.6 fs [10 kHz-1 MHz], respectively. Our results show that the non-gain section of mode-locked fiber lasers can be easily implemented as a single PLC chip that can be manufactured by a wafer-scale fabrication process. The use of PLC processes in mode-locked lasers has the potential for higher manufacturability of low-cost and robust fiber and waveguide lasers.

  10. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years (United States)

    Calvez, S.; Adams, M. J.


    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  11. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro


    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  12. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey


    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  13. Femtosecond mode-locked erbium-doped fiber laser based on MoS2-PVA saturable absorber (United States)

    Ahmed, M. H. M.; Latiff, A. A.; Arof, H.; Ahmad, H.; Harun, S. W.


    We fabricate a free-standing few-layer molybdenum disulfide (MoS2)-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a soliton mode-locked Erbium-doped fiber laser (EDFL). A stable self-started mode-locked soliton pulse is generated by fine-tuning the rotation of the polarization controller at a low threshold pump power of 25 mW. Its solitonic behavior is verified by the presence of Kelly sidebands in the output spectrum. The central wavelength, pulse width, and repetition rate of the laser are 1573.7 nm, 630 fs, and 27.1 MHz, respectively. The maximum pulse energy is 0.141 nJ with peak power of 210 W at pump power of 170 mW. This result contributes to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.

  14. Simulation of dissipative-soliton-resonance generation in a passively mode-locked Yb-doped fiber laser (United States)

    Du, Wenxiong; Li, Heping; Liu, Cong; Shen, Shengnan; Zhang, Shangjian; Liu, Yong


    We present a numerical investigation of dissipative-soliton-resonance (DSR) generation in an all-normal-dispersion Ybdoped fiber laser mode-locked by a real saturable absorber (SA). In the simulation model, the SA includes both the saturable absorption and excited-state absorption (ESA) effects. The intra-cavity pulse evolution is numerically simulated with different transmission functions of SA. When omitting the ESA effect, the transmissivity of SA increases monotonically with the input pulse power. The noise-like pulse (NLP) operation in the cavity is obtained at high pump power, which is attributed to the spectral filtering effect. When the ESA effect is activated, higher instantaneous power part of pulse encounters larger loss induced by SA, causing that the pulse peak power is clamped at a certain fixed value. With increasing pump, the pulse starts to extend in the time domain while the pulse spectrum is considerably narrowed. In this case, the NLP operation state induced by the spectral filtering effect is avoided and the DSR is generated. Our simulation results indicate that the ESA effect in the SA plays a dominant role in generating the DSR pulses, which will be conducive to comprehending the mechanism of DSR generation in passively mode-locked fiber lasers.

  15. Design studies on compact four mirror laser resonator with mode-locked pulsed laser for 5 μm laser wire

    Energy Technology Data Exchange (ETDEWEB)

    Rawankar, Arpit [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Urakawa, Junji, E-mail: [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Shimizu, Hirotaka [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); You, Yan [Department of Engineering Physics, Tsinghua University, Beijing, 100084 (China); Terunuma, Nobuhiro [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Aryshev, Alexander; Honda, Yosuke [High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)


    A compact prototype four-mirror optical cavity is being constructed at KEK-ATF to measure low-emittance electron beams in the damping ring. Four-mirror-resonators reduce the sensitivity to the misalignment of mirrors in comparison to two mirror-resonators. The aspect ratio is important when constructing a compact resonator with a very small beam waist of less than 5 μm. The total cavity length of a four-mirror resonator is matched according to the pulse repetition of mode-locked laser oscillator. Minimum beam waist is obtained in the sagittal plane using an IR pulsed laser. The advantage of such types of compact four-mirror-resonators is the total scanning time for measurement of the beam profile is much shorter in comparison to a CW laser wire system. By using a pulsed green laser that has been converted to the second harmonics from an IR pulsed laser, a minimum beam waist that has half the beam waist when using an IR laser oscillator can be obtained. Therefore, it is possible to obtain the beam waist of less than 5 μm (σ value) that is required for effective photon–electron collision. We report on the development and performance studies for such types of compact four-mirror laser wire systems.

  16. Guiding effect of quantum wells in semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N


    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  17. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.


    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  18. 40-gHz, 100-fs stimulated-Brillouin-scattering-free pulse generation by combining a mode-locked laser diode and a dispersion-decreasing fiber. (United States)

    Hagiuda, Ken-ichi; Hirooka, Toshihiko; Nakazawa, Masataka; Arahira, Shin; Ogawa, Yoh


    A 40-GHz, 100-fs pulse train was successfully generated by soliton compression of a mode-locked laser diode (MLLD) pulse with a dispersion-decreasing fiber. The MLLD had a longitudinal mode linewidth as broad as 60 MHz, which made it possible to suppress stimulated Brillouin scattering and achieve stable, ultrahigh-speed pulse compression without applying external frequency modulation.

  19. Optical parametric generation by a simultaneously Q-switched mode-locked single-oscillator thulium-doped fiber laser in orientation-patterned gallium arsenide. (United States)

    Donelan, Brenda; Kneis, Christian; Scurria, Giuseppe; Cadier, Benoît; Robin, Thierry; Lallier, Eric; Grisard, Arnaud; Gérard, Bruno; Eichhorn, Marc; Kieleck, Christelle


    Optical parametric generation is demonstrated in orientation-patterned gallium arsenide, pumped by a novel single-oscillator simultaneously Q-switched and mode-locked thulium-doped fiber laser, downconverting the pump radiation into the mid-infrared wavelength regime. The maximum output energy reached is greater than 2.0 μJ per pump pulse.

  20. Tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation

    International Nuclear Information System (INIS)

    Luo, A-P; Luo, Z-C; Xu, W-C; Dvoyrin, V V; Mashinsky, V M; Dianov, E M


    We demonstrate a tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser by using nonlinear polarization rotation (NPR) technique. Exploiting the spectral filtering effect caused by the combination of the polarizer and intracavity birefringence, the wavelength separation of dual-wavelength mode-locked pulses can be flexibly tuned between 2.38 and 20.45 nm. Taking the advantage of NPR-induced intensity-dependent loss to suppress the mode competition, the stable dual-wavelength pulses output is obtained at room temperature. Moreover, the dual-wavelength switchable operation is achieved by simply rotating the polarization controllers (PCs)

  1. Vector nature of multi-soliton patterns in a passively mode-locked figure-eight fiber laser. (United States)

    Ning, Qiu-Yi; Liu, Hao; Zheng, Xu-Wu; Yu, Wei; Luo, Ai-Ping; Huang, Xu-Guang; Luo, Zhi-Chao; Xu, Wen-Cheng; Xu, Shan-Hui; Yang, Zhong-Min


    The vector nature of multi-soliton dynamic patterns was investigated in a passively mode-locked figure-eight fiber laser based on the nonlinear amplifying loop mirror (NALM). By properly adjusting the cavity parameters such as the pump power level and intra-cavity polarization controllers (PCs), in addition to the fundamental vector soliton, various vector multi-soliton regimes were observed, such as the random static distribution of vector multiple solitons, vector soliton cluster, vector soliton flow, and the state of vector multiple solitons occupying the whole cavity. Both the polarization-locked vector solitons (PLVSs) and the polarization-rotating vector solitons (PRVSs) were observed for fundamental soliton and each type of multi-soliton patterns. The obtained results further reveal the fundamental physics of multi-soliton patterns and demonstrate that the figure-eight fiber lasers are indeed a good platform for investigating the vector nature of different soliton types.

  2. Intracavity KTP-based OPO pumped by a dual-loss modulated, simultaneously Q-switched and mode-locked Nd:GGG laser. (United States)

    Chu, Hongwei; Zhao, Shengzhi; Yang, Kejian; Zhao, Jia; Li, Yufei; Li, Dechun; Li, Guiqiu; Li, Tao; Qiao, Wenchao


    An intracavity KTiOPO(4) (KTP) optical parametric oscillator (OPO) pumped by a simultaneously Q-switched and mode-locked (QML) Nd:Gd(3)Ga(5)O(12) (Nd:GGG) laser with an acousto-optic modulator (AOM) and a Cr(4+):YAG saturable absorber is presented. A minimum mode-locking pulse duration underneath the Q-switched envelope was evaluated to be about 290 ps. A maximum QML output power of 82 mW at the signal wavelength of 1570 nm was achieved, corresponding to a maximum mode-locked pulse energy of about 5.12 μJ. The M(2) values were measured to be about 1.3 and 1.5 for tangential and sagittal directions using knife-edge technique.

  3. Miniature thermoelectric coolers for semiconductor lasers

    International Nuclear Information System (INIS)

    Semenyuk, V.A.; Pilipenko, T.V.; Albright, G.C.; Ioffe, L.A.; Rolls, W.H.


    The problem of matching thermoelectric coolers and semiconductor lasers with respect to heat flow densities and electrical currents is discussed. It is shown that the solution of this problem is accomplished by the reduction of thermoelement dimensions to the submillimeter level. Assembled with extruded thermoelectric materials, miniature coolers with a thermoelement length as short as 0.1 mm and a cross section of 0.2x0.2 mm 2 are demonstrated. Using 0.5 mm thick aluminum ceramic plates, the overall height of these miniature coolers can be as low as 1.1 mm. The devices are designed for cooling and thermally stabilizing miniature optoelectronic elements, especially semiconductor lasers. The results of device testing over a wide range of temperature and heat loads are given. This novel approach in thermoelectric cooler design represents a new step in miniaturization and reduced current requirements, with little or no loss in maximum attainable temperature difference. A ΔT max of 68 K is demonstrated with input current of 200 mA. Due to the small thermoelement length, extremely large heat flow densities at cold junctions are practical (up to 100 W/cm 2 at ΔT=0), making these devices ideal for heat intensive local sources such as injection laser diodes. Due to the extremely small sizes, these coolers have a high speed of response where a ΔT of 35 K in specimens with the thermoelement length of 0.1 mm is approximately 150 milliseconds. These micro coolers are ideal for use within the semiconductor device housing and under conditions where limitations of power, size, and electrical current predominate. copyright 1995 American Institute of Physics

  4. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR) (United States)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Yeh, Chien-Hung; Lai, Yin-Chieh; Tsang, Hon-Ki


    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism.

  5. Laser thermoreflectance for semiconductor thin films metrology (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.


    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  6. Soliton rains in a graphene-oxide passively mode-locked ytterbium-doped fiber laser with all-normal dispersion

    International Nuclear Information System (INIS)

    Huang, S S; Yan, P G; Zhang, G L; Zhao, J Q; Li, H Q; Lin, R Y; Wang, Y G


    We experimentally investigated soliton rains in an ytterbium-doped fiber (YDF) laser with a net normal dispersion cavity using a graphene-oxide (GO) saturable absorber (SA). The 195 m-long-cavity, the fiber birefringence filter and the inserted 2.5 nm narrow bandwidth filter play important roles in the formation of the soliton rains. The soliton rain states can be changed by the effective gain bandwidth of the laser. The experimental results can be conducive to an understanding of dissipative soliton features and mode-locking dynamics in all-normal dispersion fiber lasers with GOSAs. To the best of our knowledge, this is the first demonstration of soliton rains in a GOSA passively mode-locked YDF laser with a net normal dispersion cavity. (letter)

  7. Ultralow-jitter passive timing stabilization of a mode-locked Er-doped fiber laser by injection of an optical pulse train. (United States)

    Yoshitomi, Dai; Kobayashi, Yohei; Kakehata, Masayuki; Takada, Hideyuki; Torizuka, Kenji; Onuma, Taketo; Yokoi, Hideki; Sekiguchi, Takuro; Nakamura, Shinki


    The pulse timing of a mode-locked Er-doped fiber laser was stabilized to a reference pulse train from a Cr:forsterite mode-locked laser by all-optical passive synchronization scheme. The reference pulses were injected into a ring cavity of the fiber laser by using a 1.3-1.5 mum wavelength-division multiplexer. The spectral shift induced by cross-phase modulation between copropagating two-color pulses realizes self-synchronization due to intracavity group-delay dispersion. The rms integration of timing jitter between the fiber laser pulse and the reference pulse was 3.7 fs in a Fourier frequency range from 1 Hz to 100 kHz.

  8. Various phenomena of self-mode-locked operation in optically pumped semiconductor lasers (United States)

    Tsou, C. H.; Liang, H. C.; Huang, K. F.; Chen, Y. F.


    This work presents several optical experiments to investigate the phenomenon of self-mode locking (SML) in optically pumped semiconductor lasers (OPSLs). First of all, we systematically explore the influence of high-order transverse modes on the SML in an OPSL with a linear cavity. Experimental results reveal that the occurrence of SML can be assisted by the existence of the first high-order transverse mode, and the laser is operated in a well-behaved SML state with the existence of the TEM0,0 mode and the first high-order transverse mode. While more high-order transverse modes are excited, it is found that the pulse train is modulated by more beating frequencies of transverse modes. The temporal behavior becomes the random dynamics when too many high-order transverse modes are excited. We observe that the temporal trace exhibits an intermittent mode-locked state in the absence of high-order transverse modes. In addition to typical mode-locked pulses, we originally observe an intriguing phenomenon of SML in an OPSL related to the formation of bright-dark pulse pairs. We experimentally demonstrated that under the influence of the tiny reflection feedback, the phase locking between lasing longitudinal modes can be assisted to form bright-dark pulse pairs in the scale of round-trip time. A theoretical model based on the multiple reflections in a phase-locked multi-longitudinal-mode laser is developed to confirm the formation of bright-dark pulse pairs.

  9. Novel concepts for designing semiconductor lasers (United States)

    Shchukin, V. A.; Ledentsov, N. N.; Maximov, M. V.; Gordeev, N. Yu; Shernyakov, Yu M.; Payusov, A. S.; Zhukov, A. E.


    We review novel concepts and demonstrate recent experimental data for edge- emitting semiconductor lasers with broad vertical waveguide. The ultimate case for waveguide extension in the vertical direction can be implemented by using the Tilted Wave Laser (TWL) approach. A TWL is composed of a thin active waveguide (typically 0.3-2 μm) optically coupled to a thick passive waveguide (10-150 μm). A TWL with a 26 μm-thick passive waveguide demonstrated low internal loss of 1.4 cm-1, maximum pulsed power 18 W and maximum CW power 4.7 W. Vertical far field of the TWL consists of two tilted narrow lobs of 2 degrees full width at half maximum each.

  10. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.


    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  11. Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo


    Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

  12. Second-order fractional Talbot effect induced frequency-doubling optical pulse injection for 40 GHz rational-harmonic mode-locking of an SOA fiber laser (United States)

    Kang, Jung-Jui; Lin, Yung-Hsiang; Lee, Chao-Kuei; Lin, Gong-Ru


    A second-order fractional Talbot effect induced frequency-doubling of a 10 GHz optical pulse-train is demonstrated to backward injection mode-lock a semiconductor optical amplifier fiber laser (SOAFL) for 40 GHz rational-harmonic mode-locking (RHML). That is, a real all-optical gain-modulation of the SOAFL can be created by injecting such a time-multiplexed but pseudo-frequency-doubled pulse-train into the cavity. The time-multiplexing pulse-train can thus be transformed into a frequency-multiplied pulse-train via cross-gain modulation (XGM). The optical pulse-train at 10 GHz is generated by nonlinearly driving an electro-absorption modulator (EAM), which experiences the second-order fractional Talbot effect after propagating through a 4 km long dispersion compensation fiber (DCF). The DCF not only plays the role of frequency-doubler but also compensates the frequency chirp of the 10 GHz optical pulse-train. The pulsewidth broadening from 22 to 60 ps for initiating the time-domain Talbot effect is simulated by the nonlinear Schrödinger equation. With careful detuning of the RF modulation power of the EAM at 5 dBm, the generated 20 GHz optical pulse-train exhibits a positive frequency chirp with minimum peak-to-peak value of 2 GHz, and the peak-amplitude fluctuation between adjacent pulses is below 1.4%. In comparison with the SOAFL pulse-train repeated at 40 GHz generated by the fourth-order purely RHML process, the optimized second-order fractional Talbot effect in combination with the second-order RHML mechanism significantly enhances the modulation-depth of RHML, thus improving the on/off extinction ratio of the 40 GHz SOAFL pulse-train from 1.8 to 5.6 dB. Such a new scheme also provides a more stable 40 GHz RHML pulse-train from the SOAFL with its timing jitter reducing from 0.51 to 0.23 ps.

  13. Ultrashort pulse generation in mode-locked erbium-doped fiber lasers with tungsten disulfide saturable absorber (United States)

    Liu, Mengli; Liu, Wenjun; Pang, Lihui; Teng, Hao; Fang, Shaobo; Wei, Zhiyi


    Tungsten disulfide (WS2), as one of typical transition metal dichalcogenides with the characteristics of strong nonlinear polarization and wide bandgap, has been widely used in such fields as biology and optoelectronics. With the magnetron sputtering technique, the saturable absorber (SA) is prepared by depositing WS2 and Au film on the tapered fiber. The heat elimination and damage threshold can be improved for the WS2 SA with evanescent field interaction. Besides, the Au film is deposited on the surface of the WS2 film to improve their reliability and avoid being oxidized. The fabricated SA has a modulation depth of 14.79%. With this SA, we obtain a relatively stable mode-locked fiber laser with the pulse duration of 288 fs, the repetition rate of 41.4 MHz and the signal to noise ratio of 58 dB.

  14. Mode-locked thin-disk lasers and their potential application for high-power terahertz generation (United States)

    Saraceno, Clara J.


    The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

  15. 80  nJ ultrafast dissipative soliton generation in dumbbell-shaped mode-locked fiber laser. (United States)

    Chen, He; Chen, Sheng-Ping; Jiang, Zong-Fu; Hou, Jing


    A novel all-fiberized dumbbell-shaped mode-locked fiber laser was developed to directly generate 80 nJ dissipative solitons, which can be linearly compressed from 85 to 1.2 ps externally with a diffraction grating pair. The pulse peak power reached 42 kW after compression. With the most available pump power, stable dissipative soliton bundles with up to 628 nJ bundle energy were obtained. The corresponding average output power reached 2.2 W. The employment of dual-nonlinear-optical-loop mirrors and large-mode-area fibers in the cavity played an essential role in improving structural compactness and producing high-energy ultrafast pulses. To the best of our knowledge, these are the most energetic compressible dissipative solitons generated from a strictly all-fiber cavity.

  16. Real-time full-field characterization of transient dissipative soliton dynamics in a mode-locked laser (United States)

    Ryczkowski, P.; Närhi, M.; Billet, C.; Merolla, J.-M.; Genty, G.; Dudley, J. M.


    Dissipative solitons are remarkably localized states of a physical system that arise from the dynamical balance between nonlinearity, dispersion and environmental energy exchange. They are the most universal form of soliton that can exist, and are seen in far-from-equilibrium systems in many fields, including chemistry, biology and physics. There has been particular interest in studying their properties in mode-locked lasers, but experiments have been limited by the inability to track the dynamical soliton evolution in real time. Here, we use simultaneous dispersive Fourier transform and time-lens measurements to completely characterize the spectral and temporal evolution of ultrashort dissipative solitons as their dynamics pass through a transient unstable regime with complex break-up and collisions before stabilization. Further insight is obtained from reconstruction of the soliton amplitude and phase and calculation of the corresponding complex-valued eigenvalue spectrum. These findings show how real-time measurements provide new insights into ultrafast transient dynamics in optics.

  17. Comb multi-wavelength, rectangular pulse, passively mode-locked fiber laser enhanced by un-pumped Erbium-doped fiber (United States)

    Guo, Chunyu; Luo, Ruoheng; Liu, Weiqi; Ruan, Shuangchen; Yang, Jinhui; Yan, Peiguang; Wang, Jinzhang; Hua, Ping


    We propose and demonstrate a comb multi-wavelength, nanosecond rectangular pulse, passively mode-locked Erbium-doped fiber (EDF) laser. A section of un-pumped EDF had been employed to optimize the multi-wavelength pulses for the first time to the best of our knowledge. The un-pumped EDF absorbs the unwanted the short-wavelength lasing and optimizes the gain, therefore allowing for the enhancement of the long-wavelength lasing. Because of the gain competition effect in the un-pumped EDF, the output wavelength line number of the fiber laser can be significantly increased from three wavelengths to twenty lasing wavelengths. The mode-locked pulse has a rectangular temporal profile with pump power dependent pulse duration. Experimental results illustrate that the fiber laser has a good stability at room temperature. This work provides a new configuration for the design of multi-wavelength, rectangular nanosecond pulse that may fit for specific applications.

  18. Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm. (United States)

    Barbarin, Yohan; Bente, Erwin A J M; Heck, Martijn J R; Oei, Y S; Nötzel, Richard; Smit, Meint K


    We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz - 80 MHz), which is low for an all-active device using bulk material and due to the ring configuration. Measured output pulses are highly chirped, a FWHM bandwidth is obtained of up to 4.5 nm. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for OCDMA applications.

  19. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.


    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  20. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard


    We discuss the implications of using monolithically integrated semiconductor lasers in high capacity optical coherent links suitable for metro applications, where the integration capabilities of semiconductor lasers make them an attractive candidate to reduce transceiver cost. By investigating...... semiconductor laser frequency noise profiles we show that carrier induced frequency noise plays an important role in system performance. We point out that, when such lasers are employed, the commonly used laser linewidth fails to estimate system performance, and we propose an alternative figure of merit that we...... name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...

  1. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber. (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji


    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  2. Diode array pumped, non-linear mirror Q-switched and mode-locked ...

    Indian Academy of Sciences (India)

    Abstract. A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser ...

  3. Diode array pumped, non-linear mirror Q-switched and mode-locked ...

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  4. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  5. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong


    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  6. Laser method for simulating the transient radiation effects of semiconductor (United States)

    Li, Mo; Sun, Peng; Tang, Ge; Wang, Xiaofeng; Wang, Jianwei; Zhang, Jian


    In this paper, we demonstrate the laser simulation adequacy both by theoretical analysis and experiments. We first explain the basic theory and physical mechanisms of laser simulation of transient radiation effect of semiconductor. Based on a simplified semiconductor structure, we describe the reflection, optical absorption and transmission of laser beam. Considering two cases of single-photon absorption when laser intensity is relatively low and two-photon absorption with higher laser intensity, we derive the laser simulation equivalent dose rate model. Then with 2 types of BJT transistors, laser simulation experiments and gamma ray radiation experiments are conducted. We found good linear relationship between laser simulation and gammy ray which depict the reliability of laser simulation.

  7. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser (United States)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru


    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm-1 and the disappearance of the 2D-band peak at 2700 cm-1. The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth.

  8. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers (United States)

    Pierścińska, D.


    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  9. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

    DEFF Research Database (Denmark)

    Klaime, K.; Piron, R.; Grillot, F.


    for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show...

  10. Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

    Directory of Open Access Journals (Sweden)

    Martijn J.R. Heck


    Full Text Available A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.

  11. Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian


    A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines .......A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines ....

  12. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi


    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss...... are analyzed. The nonlinear transparent waveguide, i.e. an amplifier saturated to the point where the stimulated emission balances the internal losses, is shown to be analytically solvable and is a convenient vehicle for gaining qualitative understanding of the dynamics of modulated semiconductor optical...

  13. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter


    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  14. Femtosecond Carrier Dynamics and Modelocking in Monolithic CPM Lasers. [SB1

    DEFF Research Database (Denmark)

    Brorson, S.D.; Bischoff, Svend; MØrk, J.


    Femtosecond pump-probe measurements of the dynamics in both forward- and reverse-biased semiconductor optical waveguides arepresented. Slow (nanosecond) as well as ultrafast (femtosecond) dynamics are observed in both kinds of structures....

  15. 50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror (United States)

    Naganuma, Kazunori; Mogi, Kazuo


    50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

  16. Influence of gain fiber on dissipative soliton pairs in passively mode-locked fiber laser based on BP as a saturable absorber (United States)

    Gao, Bo; Ma, Chunyang; Huo, Jiayu; Guo, Yubin; Sun, Tiegang; Wu, Ge


    We investigate the influence of gain fiber on dissipative soliton pairs in passively mode-locked (PML) fiber laser based on black phosphorus (BP) as a saturable absorber. Numerical simulations show that we can generate the dissipative soliton pairs in PML fiber laser when the gain fiber parameters (gain saturation energy and gain bandwidth) are in an appropriate dynamic range, and the dissipative soliton pairs become unstable once the range is exceeded. Then we analyze the dynamic evolution of the dissipative soliton pairs and the influence of gain fiber on the pulse separation, peak power, and single-pulse energy of the dissipative solitons pairs.

  17. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng


    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  18. Demonstration of a home projector based on RGB semiconductor lasers. (United States)

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang


    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3.

  19. Bifurcation analysis of a semiconductor laser with filtered optical feedback

    NARCIS (Netherlands)

    Erzgraeber, H.; Krauskopf, B.; Lenstra, D.


    We study the dynamics and bifurcations of a semiconductor laser with delayed filtered optical feedback, where a part of the output of the laser reenters after spectral filtering. This type of coherent optical feedback is more challenging than the case of conventional optical feedback from a simple

  20. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann


    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

  1. Ultrathin quartz plate-based multilayer MoS2 for passively mode-locked fiber lasers (invited) (United States)

    Jiang, Zike; Li, Jiarong; Chen, Hao; Wang, Jinzhang; Zhang, Wenfei; Yan, Peiguang


    We have grown ultrathin quartz plate-based multilayer molybdenum disulfide (MoS2) by chemical vapor deposition (CVD). When employed as saturable absorber (SA), the prepared MoS2 device exhibits remarkable merits (e.g. uniform thickness, high quality of crystal lattice high damage threshold easy fabrication and good practicability). The modulation depth, saturable intensity, and non-saturable loss of this SA device are measured to be 16.1%, 0.438 MW/cm2 and 44.6% respectively. By incorporating the SA into a typical ring cavity erbium-doped fiber laser, stable passive soliton mode-locked pulse is achieved with the repetition frequency of 0.987 MHz, the signal noise ratio (SNR) of 71.4 dB and the pulse duration of 2.17 ps. The experimental results demonstrate our MoS2-SA device to be an effective mode locker, and it is promising to be used in ultrafast photonics.

  2. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Directory of Open Access Journals (Sweden)

    Malik Kemiche


    Full Text Available We exploit slow light (high ng modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28, this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate of the pulsed laser signal.

  3. Mode-locking peculiarities in an all-fiber erbium-doped ring ultrashort pulse laser with a highly-nonlinear resonator (United States)

    Dvoretskiy, Dmitriy A.; Sazonkin, Stanislav G.; Kudelin, Igor S.; Orekhov, Ilya O.; Pnev, Alexey B.; Karasik, Valeriy E.; Denisov, Lev K.


    Today ultrashort pulse (USP) fiber lasers are in great demand in a frequency metrology field, THz pulse spectroscopy, optical communication, quantum optics application, etc. Therefore mode-locked (ML) fiber lasers have been extensively investigated over the last decade due the number of scientific, medical and industrial applications. It should be noted, that USP fiber lasers can be treated as an ideal platform to expand future applications due to the complex ML nonlinear dynamics in a laser resonator. Up to now a series of novel ML regimes have been investigated e.g. self-similar pulses, noise-like pulses, multi-bound solitons and soliton rain generation. Recently, we have used a highly nonlinear germanosilicate fiber (with germanium oxides concentration in the core 50 mol. %) inside the resonator for more reliable and robust launching of passive mode-locking based on the nonlinear polarization evolution effect in fibers. In this work we have measured promising and stable ML regimes such as stretched pulses, soliton rain and multi-bound solitons formed in a highly-nonlinear ring laser and obtained by intracavity group velocity dispersion (GVD) variation in slightly negative region. As a result, we have obtained the low noise ultrashort pulse generation with duration 59 dB) and relative intensity noise <-101 dBc / Hz.

  4. Dynamic and static strain fiber Bragg grating sensor interrogation with a 1.3 µm Fourier domain mode-locked wavelength-swept laser

    International Nuclear Information System (INIS)

    Lee, Byoung Chang; Jeon, Min Yong; Jung, Eun-Joo; Kim, Chang-Seok


    We demonstrate dynamic and static strain fiber Bragg grating (FBG) sensor array interrogation using a 1.3 µm Fourier-domain mode-locked (FDML) wavelength-swept laser. The FDML wavelength-swept laser provides a high speed scanning rate and wide scanning bandwidth. Using the FDML wavelength swept laser, we measure the performances of static strain sensor interrogation for both time and spectral domains. The slope coefficients for the measured relative wavelength difference and relative time delay from the static strain are 0.8 pm/µstrain and 0.086 ns/µstrain, respectively. We demonstrate the dynamic response of the FBG sensor array with a 100 Hz modulating strain based on the FDML wavelength-swept laser at a 40.6 kHz scanning rate. The FBG sensor interrogation system using the FDML wavelength-swept laser can be realized for high-speed and high-sensitivity monitoring systems

  5. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le


    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  6. Medium-gain erbium doped fiber amplifier ring laser passively mode-locked by graphite nano-powder adhered thin PVA film (United States)

    Lin, Yung-Hsiang; Lin, Gong-Ru


    A direct brushing process of graphite nano-powder adhered on the single-mode fiber end-face with the use of an ultrathin PVA film is demonstrated, such a graphite nano-powder adhered ultra-thin PVA film is introduced to passively mode-lock a medium-gain Erbium-doped fiber laser (EDFL). The structural property of the graphite nano-powder is investigated by Raman spectroscopy. Numerous structural defects induced when abrading the graphite into nano-powder are found to broaden the 2D band Raman scattered signal and attenuate its peak intensity. The graphite nano-powders exhibit the featureless transmittance to show the potential as being a broadband tuning saturable absorber. In addition, the modulation depth of 0.43 is comparable with the graphene saturable absorber. The central wavelength of the passively mode-locked medium-gain EDFL is at 1561.2 nm with the full width at half maximum (FHWM) of 1.62 nm, and the pulsewidth is 1.58 ps. Under the limited intra-cavity power of 18 dBm, a nearly transform-limited passively mode-locking EDFL with TBP of 0.32 is generated.

  7. Noise equivalent circuit of a semiconductor laser diode


    Harder, Christoph; Katz, Joseph; Margalit, S.; Shacham, J.; Yariv, A.


    The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven laser diode are calculated as a function of bias current and frequency.

  8. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.


    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  9. Quantum dot cadmium selenide as a saturable absorber for Q-switched and mode-locked double-clad ytterbium-doped fiber lasers (United States)

    Mahyuddin, M. B. H.; Latiff, A. A.; Rusdi, M. F. M.; Irawati, N.; Harun, S. W.


    This paper demonstrates the integration of quantum dot (QD) cadmium selenide (CdSe) nanoparticles, which is embedded into polymethyl methacrylate (PMMA) film into an ytterbium-doped fiber laser (YDFL) cavity to produce Q-switched and mode-locked fiber lasers. The QD CdSe based film functions as a saturable absorber (SA). For Q-switching operation, stable pulse is generated within 970-1200 mW pump power, with tunable repetition rate and pulse width of 24.5-40.5 kHz and 6.8-3.7 μs, respectively. Maximum pulse energy and peak power are obtained about 1.1 μJ and 0.28 W, respectively. As we tune the polarization state of the laser cavity and use a single QD CdSe film, the mode-locking operation could also be generated within 310-468 mW pump power with repetition rate of 14.5 MHz and pulse width of 3.5 ps. Maximum pulse energy and peak power are obtained about 2 nJ and 0.11 W, respectively. These results may contribute to continuous research work on laser pulse generation, providing new opportunities of CdSe material in photonics applications.

  10. Reduction of timing jitter and intensity noise in normal-dispersion passively mode-locked fiber lasers by narrow band-pass filtering. (United States)

    Qin, Peng; Song, Youjian; Kim, Hyoji; Shin, Junho; Kwon, Dohyeon; Hu, Minglie; Wang, Chingyue; Kim, Jungwon


    Fiber lasers mode-locked with normal cavity dispersion have recently attracted great attention due to large output pulse energy and femtosecond pulse duration. Here we accurately characterized the timing jitter of normal-dispersion fiber lasers using a balanced cross-correlation method. The timing jitter characterization experiments show that the timing jitter of normal-dispersion mode-locked fiber lasers can be significantly reduced by using narrow band-pass filtering (e.g., 7-nm bandwidth filtering in this work). We further identify that the timing jitter of the fiber laser is confined in a limited range, which is almost independent of cavity dispersion map due to the amplifier-similariton formation by insertion of the narrow bandpass filter. The lowest observed timing jitter reaches 0.57 fs (rms) integrated from 10 kHz to 10 MHz Fourier frequency. The rms relative intensity noise (RIN) is also reduced from 0.37% to 0.02% (integrated from 1 kHz to 5 MHz Fourier frequency) by the insertion of narrow band-pass filter.

  11. Fiber optical parametric oscillator based on photonic crystal fiber pumped with all-normal-dispersion mode-locked Yb:fiber laser

    International Nuclear Information System (INIS)

    Gou Dou-Dou; Yang Si-Gang; Zhang Lei; Wang Xiao-Jian; Chen Hong-Wei; Chen Ming-Hua; Xie Shi-Zhong; Chen Wei; Luo Wen-Yong


    We demonstrate a cost effective, linearly tunable fiber optical parametric oscillator based on a home-made photonic crystal fiber pumped with a mode-locked ytterbium-doped fiber laser, providing linely tuning ranges from 1018 nm to 1038 nm for the idler wavelength and from 1097 nm to 1117 nm for the signal wavelength by tuning the pump wavelength and the cavity length. In order to obtain the desired fiber with a zero dispersion wavelength around 1060 nm, eight samples of photonic crystal fibers with gradually changed structural parameters are fabricated for the reason that it is difficult to accurately customize the structural dimensions during fabrication. We verify the usability of the fabricated fiber experimentally via optical parametric generation and conclude a successful procedure of design, fabirication, and verification. A seed source of home-made all-normal-dispersion mode-locked ytterbium-doped fiber laser with 38.57 ps pulsewidth around the 1064 nm wavelength is used to pump the fiber optical parametric oscillator. The wide picosecond pulse pump laser enables a larger walk-off tolerance between the pump light and the oscillating light as well as a longer photonic crystal fiber of 20 m superior to the femtosecond pulse lasers, resulting in a larger parametric amplification and a lower threshold pump power of 15.8 dBm of the fiber optical parametric oscillator. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  12. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    International Nuclear Information System (INIS)

    Minaev, V P


    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  13. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    International Nuclear Information System (INIS)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.


    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  14. A mode-locked thulium-doped fiber laser based on a nonlinear loop mirror

    Czech Academy of Sciences Publication Activity Database

    Honzátko, Pavel; Baravets, Yauhen; Todorov, Filip


    Roč. 10, č. 7 (2013) ISSN 1612-2011 R&D Projects: GA ČR(CZ) GAP205/11/1840 Institutional support: RVO:67985882 Keywords : PULSE GENERATION * RING LASER * OSCILLATOR Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.964, year: 2013

  15. Comparison of the noise performance of 10GHz QW and QD mode-locked laser diodes

    DEFF Research Database (Denmark)

    Carpintero, Guillermo; Thompson, Mark G.; Yvind, Kresten


    This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes.......This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes....

  16. Ultrafast dynamics and laser action of organic semiconductors

    CERN Document Server

    Vardeny, Zeev Valy


    Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

  17. Resonator fiber optic gyro employing a semiconductor laser. (United States)

    Jin, Zhonghe; Yu, Xuhui; Ma, Huilian


    Resonator fiber optic gyro (RFOG) based on the Sagnac effect has the potential to achieve the inertial navigation system requirement with a short sensing coil. Semiconductor laser is one of the key elements for integration and miniaturization of the RFOG. In this paper, an RFOG employing a semiconductor laser is demonstrated. The model of the laser frequency noise induced error in the RFOG is described. To attenuate the laser frequency noise induced error, active frequency stabilization is applied. An online laser frequency noise observation is built, as a powerful optimum criterion for the loop parameters. Moreover, the laser frequency noise observation method is developed as a new measurement tool. With a fast digital proportional integrator based on a single field programmable gate array applied in the active stabilization loop, the laser frequency noise is reduced to 0.021 Hz (1σ). It is equivalent to a rotation rate of 0.07°/h, and close to the shot noise limit for the RFOG. As a result, a bias stability of open-loop gyro output is 9.5°/h (1σ) for the integration time 10 s in an hour observed in the RFOG. To the best of our knowledge, this result is the best long-term stability using the miniature semiconductor laser.

  18. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

    International Nuclear Information System (INIS)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru


    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm −1 and the disappearance of the 2D-band peak at 2700 cm −1 . The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth. (letter)

  19. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta


    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  20. Synchronization properties of chaotic semiconductor lasers and applications to encryption (United States)

    Mirasso, Claudio R.; Vicente, Raúl; Colet, Pere; Mulet, Josep; Pérez, Toni


    We review the main properties of two unidirectionally coupled single-mode semiconductor lasers ( master-slave configuration). Our analysis is based on numerical simulations of a rate equations model. The emitter, or master laser, is assumed to be an external-cavity single-mode semiconductor laser subject to optical feedback that operates in a chaotic regime. The receiver, or slave laser, is similar to the emitter but can either operate in a chaotic regime, as the emitter (closed loop configuration), or without optical feedback and consequently under CW when it is uncoupled (open loop configuration). This configuration is one of the most simple and useful configuration for chaos based communication systems and data encryption. To cite this article: C.R. Mirasso et al., C. R. Physique 5 (2004).

  1. All semiconductor laser Doppler anemometer at 1.55 microm. (United States)

    Hansen, René Skov; Pedersen, Christian


    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300 meters distance range. Especially, we will demonstrate that both the output power as well as the demanding coherence properties required from the laser source can be accomplished by an all semiconductor laser. Preliminary tests at a distance of 40 meters indicate a typical signal to noise ratio of 9 dB. This result is obtained at a clear day with an up-date rate of 12 Hz.

  2. Cryogenically-cooled Yb:YGAG ceramic mode-locked laser

    Czech Academy of Sciences Publication Activity Database

    Mužík, Jiří; Jelínek, M.; Jambunathan, Venkatesan; Miura, Taisuke; Smrž, Martin; Endo, Akira; Mocek, Tomáš; Kubeček, V.


    Roč. 24, č. 2 (2015), s. 1402-1408 ISSN 1094-4087 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA MŠk LO1602; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : solid-states laser * lasing characteristics Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.148, year: 2015

  3. Optical frequency comb generator based on a monolithically integrated passive mode-locked ring laser with a Mach-Zehnder interferometer. (United States)

    Corral, V; Guzmán, R; Gordón, C; Leijtens, X J M; Carpintero, G


    We report the demonstration of an optical-frequency comb generator based on a monolithically integrated ring laser fabricated in a multiproject wafer run in an active/passive integration process in a generic foundry using standardized building blocks. The device is based on a passive mode-locked ring laser architecture, which includes a Mach-Zehnder interferometer to flatten the spectral shape of the comb output. This structure allows monolithic integration with other optical components, such as optical filters for wavelength selection, or dual wavelength lasers for their stabilization. The results show a -10  dB span of the optical comb of 8.7 nm (1.08 THz), with comb spacing of 10.16 GHz. We also obtain a flatness of 44 lines within a 1.8 dB power variation.

  4. Conversion of Stability of Femtosecond Stabilized Mode-locked Laser to Optical Cavity Length

    Czech Academy of Sciences Publication Activity Database

    Šmíd, Radek; Číp, Ondřej; Čížek, Martin; Mikel, Břetislav; Lazar, Josef


    Roč. 57, č. 3 (2010), s. 636-640 ISSN 0885-3010 R&D Projects: GA ČR GA102/09/1276; GA MŠk(CZ) LC06007; GA MŠk 2C06012; GA MPO 2A-1TP1/127; GA MPO FT-TA3/133; GA MPO 2A-3TP1/113; GA ČR GA102/07/1179 Institutional research plan: CEZ:AV0Z20650511 Keywords : laser * Fabry-Perot * interferometer * length etalon Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.460, year: 2010

  5. Optical trapping with Bessel beams generated from semiconductor lasers

    International Nuclear Information System (INIS)

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U


    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  6. Portable semiconductor disk laser for in vivo tissue monitoring: a platform for the development of clinical applications (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo


    Long term in vivo observations at large penetration depths and minimum sample disturbance are some of the key factors that have enabled the study of different cellular and tissue mechanisms. The continuous optimization of these aspects is the main driving force for the development of advanced microscopy techniques such as those based on nonlinear effects. Its wide implementation for general biomedical applications is however, limited as the currently used nonlinear microscopes are based on bulky, maintenance-intensive and expensive excitation sources such as Ti:sapphire ultrafast lasers. We present the suitability of a portable (140x240x70 mm) ultrafast semiconductor disk laser (SDL) source, to be used in nonlinear microscopy. The SDL is modelocked by a quantum-dot semiconductor saturable absorber mirror (SESAM). This enables the source to deliver an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. The laser center wavelength (965 nm) virtually matches the two-photon absorption cross-section of the widely used Green Fluorescent Protein (GFP). This property greatly relaxes the required peak powers, thus maximizing sample viability. This is demonstrated by presenting two-photon excited fluorescence images of GFP labeled neurons and second-harmonic generation images of pharyngeal muscles in living C. elegans nematodes. Our results also demonstrate that this compact laser is well suited for efficiently exciting different biological dyes. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its widespread adoption in biomedical applications.

  7. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes (United States)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  8. Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers (United States)


    JOURNAL OF QUANTUM ELECTRONICS, VOL. , NO. , 1 Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers Dominic F...Siriani, Member, IEEE Abstract—A generalized theoretical formalism is derived that optimizes the doping profile of semiconductor diode lasers and amplifiers...Diode lasers, semiconductor lasers, semiconduc- tor optical amplifiers. I. INTRODUCTION ELECTRICALLY injected diode lasers have been demon-strated in many

  9. Effects of resonator input power on Kerr lens mode-locked lasers

    Indian Academy of Sciences (India)

    Additionally, in order to simplify the article, a Gaussian beam is considered. Figure 1. Resonator configuration for KLM laser: tilted mirrors M2 and M3 are focussing; output mirror M1 and back mirror M4 are flat; S1 and S2 are the slits;. L1 and L2 are the arms. The Kerr medium is placed between the mirrors M2 and M3.

  10. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  11. On the nonlinear theory of Fabry–Perot semiconductor lasers

    International Nuclear Information System (INIS)

    Noppe, Michael G


    Fundamentals of the nonlinear theory of Fabry–Perot semiconductor lasers have been developed, an integral part of which is natural linewidth theory. The formula for gain depending on the energy flux specifies the basic nonlinear effect in a laser. Necessary conditions for stimulated emission of the first and second kind are presented. Maxwell’s equations in the gain medium are applied to obtain equations for energy flux and for the description of non-linear phase effect. Based on the nonlinear theory, a number of experiments have been simulated; it indicates that the nonlinear theory is a new paradigm in laser theory. The nonlinear theory has provided recommendations for the development of lasers with improved properties, such as lasers with increased power and lasers with reduced natural linewidth. (paper)

  12. Theoretical Study of Semiconductor Laser under Modulation (United States)

    Boukari, O.; Hassine, L.; Dherbecourt, P.; Latry, O.; Ketata, M.; Bouchriha, H.


    In this paper we present a description of the chirp induced in a direct modulated DFB laser. Our study is follows two different approaches. The first approach is based on a resolution of the rate equations of laser; the second, on a simulation of a heterodyne system with the Optisystem software. This study enables us to visualize the chirp in the RF field. We also characterize it according to the injection current i(t) parameters, such as the amplitude and the frequency of the modulation. The aim of our study is to choose the appropriate values of these parameters, in order to use the direct modulated DFB laser as an optical tunable source for Coherent Optical Frequency Domain Reflectometry technique (C-OFDR). We demonstrate that the optical frequency of these lasers can be controlled via the injection current i(t) and it can be linearly swept (chirped) over some tens of gigahertz.

  13. Self-organization of the Q-switched mode-locked regime in a diode-pumped Nd:YAG laser (United States)

    Donin, V. I.; Yakovin, D. V.; Gribanov, A. V.


    A new Q-switched mode-locked generation regime of a solid-state laser, in which a Q-switch is "spontaneously" formed at the frequency of relaxation oscillations, has been observed for the first time. The new generation has been implemented by means of the previously proposed method of an acoustic modulator of a traveling wave in combination with a spherical mirror of a cavity. Stable pulse trains with a repetition frequency of ~30 kHz and a duration of ~2 µs have been observed in the diode-pump Nd:YAG laser with an average output power of ~3 W. Each train contains about 200 equispaced single pulses with a duration of ~45 ps.

  14. Phase-sensitive optical coherence tomography at up to 370,000 lines per second using buffered Fourier domain mode-locked lasers. (United States)

    Adler, Desmond C; Huber, Robert; Fujimoto, James G


    Buffered Fourier domain mode-locked (FDML) lasers are demonstrated for dynamic phase-sensitive optical coherence tomography (OCT) and 3D OCT phase microscopy. Systems are operated at sweep speeds of 42, 117, and 370 kHz, and displacement sensitivities of 39, 52, and 102 pm are achieved, respectively. Sensitivities are comparable to spectrometer-based OCT phase microscopy systems, but much faster acquisition speeds are possible. An additional factor of sqrt 2 improvement in noise performance is observed for differential phase measurements, which is important for Doppler OCT. Dynamic measurements of piezoelectric transducer motion and static 3D OCT phase microscopy are demonstrated. Buffered FDML lasers provide excellent displacement sensitivities at extremely high sweep speeds.

  15. High-pulse energy-stabilized passively mode-locked external cavity inverse bow-tie 980nm laser diode for space applications (United States)

    Krakowski, M.; Resneau, P.; Garcia, M.; Vinet, E.; Robert, Y.; Lecomte, M.; Parillaud, O.; Gerard, B.; Kundermann, S.; Torcheboeuf, N.; Boiko, D. L.


    We report on multi-section inverse bow-tie laser producing mode-locked pulses of 90 pJ energy and 6.5 ps width (895 fs after compression) at 1.3 GHz pulse repetition frequency (PRF) and consuming 2.9 W of electric power. The laser operates in an 80 mm long external cavity. By translation of the output coupling mirror, the PRF was continuously tuned over 37 MHz range without additional adjustments. Active stabilization with a phase lock loop actuating on the driving current has allowed us to reach the PRF relative stability at a 2·10-10 level on 10 s intervals, as required by the European Space Agency (ESA) for inter-satellite long distance measurements.


    DEFF Research Database (Denmark)


    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...

  17. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...... and specifications. We have measured ultrafast gain and index dynamics of SOAs in pump-and-probe experiments applying 100 fs pulses and a heterodyne detection scheme, where both amplitude and phase of the probe pulses are determined. The gain depletion, and associated index change, and the subsequent recovery afte...

  18. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.


    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  19. Design and Characterisation of III-V Semiconductor Nanowire Lasers (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  20. Review on the dynamics of semiconductor nanowire lasers (United States)

    Röder, Robert; Ronning, Carsten


    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  1. Synchronous characterization of semiconductor microcavity laser beam. (United States)

    Wang, T; Lippi, G L


    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  2. Laser cooling of a semiconductor by 40 kelvin. (United States)

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua


    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  3. Noise equivalent circuit of a semiconductor laser diode (United States)

    Harder, C.; Margalit, S.; Yariv, A.; Katz, J.; Shacham, J.


    A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.

  4. Nonlinear gain suppression in semiconductor lasers due to carrier heating

    International Nuclear Information System (INIS)

    Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.


    We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

  5. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.


    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...... recently. These results give insight into the behavior observed on a short time-scale, but do not explain some of the pronounced features of the LFF seen for moderate feedback levels; namely the stepwise build-up and its characteristic time of about 15 steps close to the solitary laser threshold. We...

  6. Field-glass range finder with a semiconductor laser (United States)

    Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan


    This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

  7. Modes in light wave propagating in semiconductor laser (United States)

    Manko, Margarita A.


    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  8. Toward continuous-wave operation of organic semiconductor lasers. (United States)

    Sandanayaka, Atula S D; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya


    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture.

  9. Toward continuous-wave operation of organic semiconductor lasers (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya


    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  10. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit


    Cappuccio, Joseph C., Jr.


    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  11. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry. (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul


    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  12. Gigahertz repetition rate, sub-femtosecond timing jitter optical pulse train directly generated from a mode-locked Yb:KYW laser. (United States)

    Yang, Heewon; Kim, Hyoji; Shin, Junho; Kim, Chur; Choi, Sun Young; Kim, Guang-Hoon; Rotermund, Fabian; Kim, Jungwon


    We show that a 1.13 GHz repetition rate optical pulse train with 0.70 fs high-frequency timing jitter (integration bandwidth of 17.5 kHz-10 MHz, where the measurement instrument-limited noise floor contributes 0.41 fs in 10 MHz bandwidth) can be directly generated from a free-running, single-mode diode-pumped Yb:KYW laser mode-locked by single-wall carbon nanotube-coated mirrors. To our knowledge, this is the lowest-timing-jitter optical pulse train with gigahertz repetition rate ever measured. If this pulse train is used for direct sampling of 565 MHz signals (Nyquist frequency of the pulse train), the jitter level demonstrated would correspond to the projected effective-number-of-bit of 17.8, which is much higher than the thermal noise limit of 50 Ω load resistance (~14 bits).

  13. Introduction to semiconductor lasers for optical communications an applied approach

    CERN Document Server

    Klotzkin, David J


    This textbook provides a thorough and accessible treatment of semiconductor lasers from a design and engineering perspective. It includes both the physics of devices as well as the engineering, designing, and testing of practical lasers. The material is presented clearly with many examples provided. Readers of the book will come to understand the finer aspects of the theory, design, fabrication, and test of these devices and have an excellent background for further study of optoelectronics. This book also: ·         Provides a multi-faceted approach to explaining the theories behind semiconductor lasers, utilizing mathematical examples, illustrations, and written theoretical presentations ·         Offers a balance of relevant optoelectronic topics, with specific attention given to distributed feedback lasers, growth techniques, and waveguide cavity design ·         Provides a summary of every chapter, worked examples, and problems for readers to solve ·         Empasizes...

  14. Transient thermal analysis of semiconductor diode lasers under pulsed operation (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.


    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  15. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves (United States)


    AFRL-AFOSR-UK-TR-2017-0009 Semiconductor laser complex dynamics: from optical neurons to optical rogue waves Christina Masoller UNIVERSIDAD...11-02-2017 2. REPORT TYPE Final 3. DATES COVERED (From - To) 30 Sep 2014 to 29 Sep 2016 4. TITLE AND SUBTITLE Semiconductor laser complex dynamics...dynamics of semiconductor lasers with two main goals: i) to advance our understanding of nonlinear and stochastic phenomena and ii) to exploit the

  16. Metal-Semiconductor Reaction Phenomena and Microstructural Investigations of Laser Induced Regrowth of Silicon on Insulators. (United States)


    tion. 3 _.34 5.0 LASER ASSISTED DIFFUSION AND ACTIVATION OF TIN FROM AN SnO 2/SiO 2 SOURCE The diffusion of impurities into a semiconductor substrate...11111.0 2 25 l22 1111111 . 12L5 .4 51 METAL- SEMICONDUCTOR REACTION PHENOMENA AND MICROSTRUCTURAL INVESTIGATIONS OF LASER INDUCED REGROWTH OF SILICON... Semiconductor Reaction Phenomena and Final Report Microstructural Investigations of Laser-Induced _Jan. I_9 t0_njani92 _ Regrowth of Silicon on

  17. Fast physical random bit generation with chaotic semiconductor lasers (United States)

    Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter


    Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

  18. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.


    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  19. Antimicrobial efficacy of semiconductor laser irradiation on implant surfaces. (United States)

    Kreisler, Matthias; Kohnen, Wolfgang; Marinello, Claudio; Schoof, Jürgen; Langnau, Ernst; Jansen, Bernd; d'Hoedt, Bernd


    This study was conducted to investigate the antimicrobial effect of an 809-nm semiconductor laser on common dental implant surfaces. Sandblasted and acid-etched (SA), plasma-sprayed (TPS), and hydroxyapatite-coated (HA) titanium disks were incubated with a suspension of S. sanguinis (ATCC 10556) and subsequently irradiated with a gallium-aluminum-arsenide (GaAlAs) laser using a 600-microm optical fiber with a power output of 0.5 to 2.5 W, corresponding to power densities of 176.9 to 884.6 W/cm2. Bacterial reduction was calculated by counting colony-forming units on blood agar plates. Cell numbers were compared to untreated control samples and to samples treated with chlorhexidine digluconate (CHX). Heat development during irradiation of the implants placed in bone blocks was visualized by means of shortwave thermography. In TPS and SA specimens, laser irradiation led to a significant bacterial reduction at all power settings. In an energy-dependent manner, the number of viable bacteria was reduced by 45.0% to 99.4% in TPS specimens and 57.6% to 99.9% in SA specimens. On HA-coated disks, a significant bacterial kill was achieved at 2.0 W (98.2%) and 2.5 W (99.3%) only (t test, P < .05). For specimens treated with CHX, the bacterial counts were reduced by 99.99% in TPS and HA-coated samples and by 99.89% in SA samples. The results of the study indicate that the 809-nm semiconductor laser is capable of decontaminating implant surfaces. Surface characteristics determine the necessary power density to achieve a sufficient bactericidal effect. The bactericidal effect, however, was lower than that achieved by a 1-minute treatment with 0.2% CHX. The rapid heat generation during laser irradiation requires special consideration of thermal damage to adjacent tissues. No obvious advantage of semiconductor laser treatment over conventional methods of disinfection could be detected in vitro.

  20. Nonlinear Optics and Nonlinear Dynamics in Semiconductor Lasers Subject to External Optical Injection

    National Research Council Canada - National Science Library

    Simpson, Thomas


    ...) arrays, and analysis of chaotic dynamics that can be induced by optical injection. Under external optical injection, all semiconductor lasers tested, conventional edge emitting Fabry Perot laser diodes, VCSELs, and distributed feedback (DFB...

  1. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

    DEFF Research Database (Denmark)

    Dontabactouny, M.; Piron, R.; Klaime, K.


    This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 m...

  2. Photon statistics and bunching of a chaotic semiconductor laser (United States)

    Guo, Yanqiang; Peng, Chunsheng; Ji, Yulin; Li, Pu; Guo, Yuanyuan; Guo, Xiaomin


    The photon statistics and bunching of a semiconductor laser with external optical feedback are investigated experimentally and theoretically. In a chaotic regime, the photon number distribution is measured and undergoes a transition from Bose-Einstein distribution to Poisson distribution with increasing the mean photon number. The second order degree of coherence decreases gradually from 2 to 1. Based on Hanbury Brown-Twiss scheme, pronounced photon bunching is observed experimentally for various injection currents and feedback strengths, which indicates the randomness of the associated emission light. Near-threshold injection currents and strong feedback strengths modify exactly the laser performance to be more bunched. The macroscopic chaotic dynamics is confirmed simultaneously by high-speed analog detection. The theoretical results qualitatively agree with the experimental results. It is potentially useful to extract randomness and achieve desired entropy source for random number generator and imaging science by quantifying the control parameters.

  3. The dynamical complexity of optically injected semiconductor lasers

    International Nuclear Information System (INIS)

    Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.


    This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

  4. Design and construct of a tunable semiconductor laser

    Directory of Open Access Journals (Sweden)

    J. Sabbaghzadeh


    Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

  5. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.


    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitte...

  6. Mitigation of mode partition noise in quantum-dash Fabry-Perot mode-locked lasers using Manchester encoding and balanced detection. (United States)

    Chaibi, Mohamed Essghair; Bramerie, Laurent; Lobo, Sébastien; Peucheret, Christophe


    We propose the use of Manchester encoding in conjunction with balanced detection to overcome the mode partition noise (MPN) limit of quantum-dash Fabry-Perot mode-locked lasers (QD-MLLs) used as multi-wavelength sources in short-reach applications. The proposed approach is demonstrated for a 10-mode laser, each carrying a 10-Gb/s signal. We show that bit-error-rate floors as high as 10 -4 when traditional non-return-to-zero (NRZ) modulation is employed with a single-ended detection scheme can be pushed below 10 -9 thanks to the introduction of Manchester encoding together with balanced detection. The benefit of the scheme could be attributed to the spectral shift of the Manchester spectrum, resulting in a smaller overlap with the high-relative intensity noise (RIN) region present at low frequencies, and the use of balanced detection. We clarify the origin of the performance improvement through comparisons of single-ended and balanced detection and the use of a RIN emulation technique. We unambiguously show that the use of balanced detection plays the leading role in MPN mitigation enabled by Manchester modulation.

  7. Blue semiconductor laser research at the University of Florida (United States)

    Zory, P. S.


    In October 1988, a research program was initiated at the University of Florida (UF) with rhe goal of developing epitaxial diode structures capable of efficient light emission in the blue-green region of the electromagnetic spectrum. Devices such as semiconductor lasers fabricated from such material would be of considerable value in areas such as high density optical storage and high definition color displays. Although diode lasers have not yet been demonstrated, considerable progress has been made in showing that ZnSe is a very good candidate for room temperature diode laser action at 470 nm. For example, room temperature photo pumped lasing was demonstrated for the first time in epitaxial thin films of ZnSe grown by MBE and MOCVD on GaAs substrates. Although GaAs is very absorbing at 470 nm, the actual waveguide losses were small leading to the possibility of developing efficient, antiguide diode light emitters. Also demonstrated were ZnSe:N/ZnSe:Cl p-n homojunction light emitting diodes fabricated using a novel nitrogen atom beam doping procedure during MBE growth. These and other results achieved in the UF blue diode laser program will be reviewed.

  8. Timing and amplitude jitter in a gain-switched multimode semiconductor laser (United States)

    Wada, Kenji; Kitagawa, Naoaki; Matsukura, Satoru; Matsuyama, Tetsuya; Horinaka, Hiromichi


    The differences in timing jitter between a gain-switched single-mode semiconductor laser and a gain-switched multimode semiconductor laser are examined using rate equations that include Langevin noise. The timing jitter in a gain-switched multimode semiconductor laser is found to be effectively suppressed by a decrease in the coherence time of the amplified spontaneous emission (ASE) based on a broad bandwidth of multimode oscillation. Instead, fluctuations in the ASE cause amplitude jitter in the pulse components of the respective modes. A pulse train of gain-switched pulses from a multimode semiconductor laser with timing jitter is equivalently simulated by assuming a high spontaneous emission factor and a short coherence time of the ASE in the single-mode semiconductor laser rate equations.

  9. A design of atmospheric laser communication system based on semiconductor laser (United States)

    Rao, Jionghui; Yao, Wenming; Wen, Linqiang


    This paper uses semiconductor laser with 905nm wave length as light source to design a set of short-distance atmospheric laser communication system. This system consists of laser light source, launch modulation circuit, detector, receiving and amplifying circuit and so on. First, this paper analyzes the factors which lead to the decrease of luminous power of laser communication link under the applicable environment-specific sea level, then this paper elicits the relationship of luminous power of receiving optical systems and distance, slant angle and divergence angle which departures from the laser beam axis by using gaussian beam geometric attenuation mode. Based on the two reasons that PPM modulation theory limits the transmission rate of PPM modulation, that is, this paper makes an analysis on repetition frequency and pulse width of laser, makes theoretical calculation for typical parameters of semiconductor laser and gets the repetition frequency which is 10KHz, pulse width is50ns, the transmission rate is 71.66 Kb/s, at this time, modulation digit is 9; then this paper selects frame synchronization code of PPM modulation and provides implementation method for test; lastly, programs language based on Verilog, uses the FPGA development board to realize PPM modulation code and does simulation test and hardware test. This paper uses APD as the detector of receiving and amplifying circuit. Then this paper designs optical receiving circuit such as amplifying circuit, analog-digital conversion circuit based on the characteristics of receipt.

  10. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)


    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  11. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner


    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...

  12. Complex photonics: Dynamics and applications of delay-coupled semiconductors lasers


    Soriano, Miguel C.; Garcia-Ojalvo, Jordi; Mirasso, Claudio R.; Fischer, Ingo


    Complex phenomena in photonics, in particular, dynamical properties of semiconductor lasers due to delayed coupling, are reviewed. Although considered a nuisance for a long time, these phenomena now open interesting perspectives. Semiconductor laser systems represent excellent test beds for the study of nonlinear delay-coupled systems, which are of fundamental relevance in various areas. At the same time delay-coupled lasers provide opportunities for photonic applications. In this review an i...

  13. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O' Malley, Martin W.; Zutavern, Fred J.


    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  14. Improved performance of semiconductor laser tracking frequency gauge (United States)

    Kaplan, D. M.; Roberts, T. J.; Phillips, J. D.; Reasenberg, R. D.


    We describe new results from the semiconductor-laser tracking frequency gauge, an instrument that can perform sub-picometer distance measurements and has applications in gravity research and in space-based astronomical instruments proposed for the study of light from extrasolar planets. Compared with previous results, we have improved incremental distance accuracy by a factor of two, to 0.9 pm in 80 s averaging time, and absolute distance accuracy by a factor of 20, to 0.17 μm in 1000 s. After an interruption of operation of a tracking frequency gauge used to control a distance, it is now possible, using a nonresonant measurement interferometer, to restore the distance to picometer accuracy by combining absolute and incremental distance measurements.

  15. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.


    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  16. DWDM channel spacing tunable optical TDM carrier from a mode-locked weak-resonant-cavity Fabry-Perot laser diode based fiber ring. (United States)

    Peng, Guo-Hsuan; Chi, Yu-Chieh; Lin, Gong-Ru


    A novel optical TDM pulsed carrier with tunable mode spacing matching the ITU-T defined DWDM channels is demonstrated, which is generated from an optically injection-mode-locked weak-resonant-cavity Fabry-Perot laser diode (FPLD) with 10%-end-facet reflectivity. The FPLD exhibits relatively weak cavity modes and a gain spectral linewidth covering >33.5 nm. The least common multiple of the mode spacing determined by both the weak-resonant-cavity FPLD and the fiber-ring cavity can be tunable by adjusting length of the fiber ring cavity or the FPLD temperature to approach the desired 200GHz DWDM channel spacing of 1.6 nm. At a specific fiber-ring cavity length, such a least-common- multiple selection rule results in 12 lasing modes between 1532 and 1545 nm naturally and a mode-locking pulsewidth of 19 ps broadened by group velocity dispersion among different modes. With an additional intracavity bandpass filter, the operating wavelength can further extend from 1520 to 1553.5 nm. After channel filtering, each selected longitudinal mode gives rise to a shortened pulsewidth of 12 ps due to the reduced group velocity dispersion. By linear dispersion compensating with a 55-m long dispersion compensation fiber (DCF), the pulsewidth can be further compressed to 8 ps with its corresponding peak-to-peak chirp reducing from 9.7 to 4.3 GHz.

  17. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine (United States)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.


    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  18. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene (United States)


    Vertical External Cavity Surface Emitting Lasers). 2)! Installation of a FTIR based temperature dependent reflectivity setup for characterizing VECSELs...and SESAMs (Semiconductor Saturable Absorber Mirrors). 3)! Demonstration of up to 6 Watts CW with InAs QD (Quantum Dot) VECSELs (1250 nm) and 15...AFRL and at other university collaborators such as the University of Arizona. 2.#Installation#of#a# FTIR #based#temperature#dependent#reflectivity

  19. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.


    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  20. Portable semiconductor laser system to stop internal bleeding (United States)

    Rediker, Robert H.; Durville, Frederic M.; Cho, George; Boll, James H.


    One significant cause of death during a sever trauma (gun wound or stab wound) is internal bleeding. A semiconductor diode laser system has been used in in vitro studies of cauterizing veins and arteries to stop bleeding. The conditions of laparoscopic surgery, including bleeding conditions (blood flow and pressure), are simulated. Results have been obtained both with and without using a hemostat (e.g., forceps) to temporarily stop the bleeding prior to the cautery. With the hemostat and a fiber-coupled 810-nm laser, blood vessels of up to 5 mm diameter were cauterized with an 8 W output from the fiber. Great cautions must be used in extrapolating from these in vitro results, since the exact conditions of bleeding in a living being are impossible to exactly reproduce in a laboratory in-vitro experiment. In a living being, when blood flow stops the cessation of nourishment to the vessels results in irreversible physiological changes. Also, the blood itself is different from blood in a living being because an anti-clotting agent (heparin) was added in order to inhibit the blood's natural tendency to coagulate.

  1. A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

    DEFF Research Database (Denmark)

    Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal


    A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser...

  2. Study of the effects of semiconductor laser irradiation on peripheral nerve injury (United States)

    Xiong, G. X.; Li, P.


    In order to study to what extent diode laser irradiation effects peripheral nerve injury, the experimental research was made on rabbits. Experimental results show that low-energy semiconductor laser can promote axonal regeneration and improve nervous function. It is also found that simultaneous exposure of the injured peripheral nerve and corresponding spinal segments to laser irradiation may achieve the most significant results.

  3. Optical label switching in telecommunication using semiconductor lasers, amplifiers and electro-absorption modulators

    DEFF Research Database (Denmark)

    Chi, Nan; Christiansen, Lotte Jin; Jeppesen, Palle


    We demonstrate all-optical label encoding and updating for an orthogonally labeled signal in combined IM/FSK modulation format utilizing semiconductor lasers, semiconductor optical amplifiers and electro-absorption modulators. Complete functionality of a network node including two-hop transmissio...

  4. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    International Nuclear Information System (INIS)

    Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long


    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

  5. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    International Nuclear Information System (INIS)

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.


    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

  6. Tunable THz Generation by the Interaction of a Super-luminous Laser Pulse with Biased Semiconductor Plasma

    International Nuclear Information System (INIS)

    Papadopoulos, K.; Zigler, A.


    Terahertz (THz) radiation is electromagnetic radiation in the range between several hundred and a few thousand GHz. It covers the gap between fast-wave electronics (millimeter waves) and optics (infrared). This spectral region offers enormous potential for detection of explosives and chemical/biological agents, non-destructive testing of non-metallic structural materials and coatings of aircraft structures, medical imaging, bio-sensing of DNA stretching modes and high-altitude secure communications. The development of these applications has been hindered by the lack of powerful, tunable THz sources with controlled waveform. The need for such sources is accentuated by the strong, but selective absorption of THz radiation during transmission through air with high vapor content. The majority of the current experimental work relies on time-domain spectroscopy using fast electrically biased photoconductive sources in conjunction with femto-second mode-locked Ti:Sapphire lasers. These sources known as Large Aperture Photoconductive Antennas (LAPA) have very limited tunability, relatively low upper bound of power and no bandwidth control. The paper presents a novel source of THz radiation known as Miniature Photoconductive Capacitor Array (MPCA). Experiments demonstrated tunability between .1 - 2 THz, control of the relative bandwidth Δf/f between .5-.01, and controlled pulse length and pulse waveform (temporal shape, chirp, pulse-to-pulse modulation etc.). Direct scaling from the current device indicates efficiency in excess of 30% at 1 THz with 1/f2 scaling at higher frequencies, peak power of 100 kW and average power between .1-1 W. The physics underlying the MPCA is the interaction of a super-luminous ionization front generated by the oblique incidence of a Ti:Sapphire laser pulse on a semiconductor crystal (ZnSe) biased with an alternating electrostatic field, similar to that of a frozen wave generator. It is shown theoretically and experimentally that the

  7. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project (United States)

    National Aeronautics and Space Administration — In this Phase II proposal we plan to design and develop a semiconductor, low phase/frequency noise, single-frequency, external cavity semiconductor laser (ECL)...

  8. Mode-locking via dissipative Faraday instability. (United States)

    Tarasov, Nikita; Perego, Auro M; Churkin, Dmitry V; Staliunas, Kestutis; Turitsyn, Sergei K


    Emergence of coherent structures and patterns at the nonlinear stage of modulation instability of a uniform state is an inherent feature of many biological, physical and engineering systems. There are several well-studied classical modulation instabilities, such as Benjamin-Feir, Turing and Faraday instability, which play a critical role in the self-organization of energy and matter in non-equilibrium physical, chemical and biological systems. Here we experimentally demonstrate the dissipative Faraday instability induced by spatially periodic zig-zag modulation of a dissipative parameter of the system-spectrally dependent losses-achieving generation of temporal patterns and high-harmonic mode-locking in a fibre laser. We demonstrate features of this instability that distinguish it from both the Benjamin-Feir and the purely dispersive Faraday instability. Our results open the possibilities for new designs of mode-locked lasers and can be extended to other fields of physics and engineering.

  9. Theoretical Study of an Actively Mode-Locked Fiber Laser Stabilized by an Intracavity Fabry-Perot Etalon: Linear Regime (United States)


    competition without a significant ncrease in the pulse duration. . MATHEMATICAL MODEL FOR THE ASER ur mathematical model of the laser is similar he case 1=0. The increase in the parameter P̂ yields an ncrease in the pulse duration by a factor of approxi- ately 10. It is possible to...etalon and it increases as the finesse of the etalon ncreases . Therefore, in a laser with an etalon, the total ispersion is determined by the parameter D̂

  10. Fundamental and harmonic soliton mode-locked erbium-doped fiber laser using single-walled carbon nanotubes embedded in poly (ethylene oxide) film saturable absorber (United States)

    Rosdin, R. Z. R. R.; Zarei, A.; Ali, N. M.; Arof, H.; Ahmad, H.; Harun, S. W.


    This paper presents a simple, compact and low cost mode-locked Erbium-doped fiber laser (EDFL) using a single-walled carbon nanotubes (SWCNTs) embedded in poly(ethylene oxide) (PEO) film as a passive saturable absorber. The film was fabricated using a prepared homogeneous SWCNT solution, which was mixed with a diluted PEO solution and casted onto a glass petri dish to form a thin film by evaporation technique. The film, with a thickness of 50 μm, is sandwiched between two fiber connectors to construct a saturable absorber, which is then integrated in an EDFL cavity to generate a self-started stable soliton pulses operating at 1560.8 nm. The soliton pulse starts to lase at 1480 nm pup power threshold of 12.3 mW to produce pulse train with repetition rate of 11.21 MHz, pulse width of 1.02 ps, average output power of 0.65 mW and pulse energy of 57.98 pJ. Then, we observed the 4th, 7th and 15th harmonic of fundamental cavity frequency start to occur when the pump powers are further increased to 14.9, 17.5 and 20.1 mW, respectively. The 4th harmonic pulses are characterized in detail with a repetition rate of 44.84 MHz, a transform-limited pulse width of 1.19 ps, side-mode suppression ratio of larger than 20 dB and pulse energy of 9.14 pJ.

  11. All semiconductor laser Doppler anemometer at 1.55 μm

    DEFF Research Database (Denmark)

    Hansen, Rene Skov; Pedersen, Christian


    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300...

  12. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian


    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...... based wind sensors have a strong potential in a number of applications such as wind turbine control, wind resource assessment, and micrometeorology (e.g. as alternative to the construction of meteorological towers with anemometers and wind vanes)....

  13. 260 fs and 1 nJ pulse generation from a compact, mode-locked Tm-doped fiber laser. (United States)

    Sobon, Grzegorz; Sotor, Jaroslaw; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Abramski, Krzysztof M


    We report on generation of 260 fs-short pulses with energy of 1.1 nJ from a fully fiberized, monolithic Tm-doped fiber laser system. The design comprises a simple, graphene-based ultrafast oscillator and an integrated all-fiber chirped pulse amplifier (CPA). The system generates 110 mW of average power at 100.25 MHz repetition rate and central wavelength of 1968 nm. This is, to our knowledge, the highest pulse energy generated from a fully fiberized sub-300 fs Tm-doped laser, without the necessity of using grating-based dispersion compensation. Such compact, robust and cost-effective system might serve as a seed source for nonlinear frequency conversion or mid-infrared supercontinuum generation.

  14. A study on the optical parts for a semiconductor laser module

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)


    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  15. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li


    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  16. Semiconductor laser with a birefringent external cavity for information systems with wavelength division multiplexing

    Energy Technology Data Exchange (ETDEWEB)

    Paranin, V D; Matyunin, S A; Tukmakov, K N [S.P. Korolev Samara State Aerospace University, Samara (Russian Federation)


    The spectrum of a semiconductor laser with a birefringent external Gires – Tournois cavity is studied. The generation of two main laser modes corresponding to the ordinary and extraordinary wave resonances is found. It is shown that the radiation spectrum is controlled with a high energy efficiency without losses for spectral filtration. The possibility of using two-mode lasing in optical communication systems with wavelength division multiplexing is shown. (control of laser radiation parameters)

  17. Effect of narrow spectral filter position on the characteristics of active similariton mode-locked femtosecond fiber laser. (United States)

    Kotb, Hussein; Abdelalim, Mohamed A; Anis, Hanan


    A significant change in active similariton characteristics, both numerically and experimentally, is observed as a function of the location of the lumped spectral filter. The closer the spectral filter is to the input of the Yb(3+)-doped fiber, the shorter the de-chirped pulse width. The peak power of the de-chirped pulse has its maximum value at a certain location of the spectral filter. Four different positions of the spectral filter inside the laser cavity have been theoretically studied and two of them have been verified experimentally.

  18. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru


    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  19. Trends in packaging of high power semiconductor laser bars

    Energy Technology Data Exchange (ETDEWEB)

    Solarz, R.W.; Emanuel, M.A.; Skidmore, J.A.; Freitas, B.L.; Krupke, W.F.


    Several different approaches to packaging high power diode laser bars for pumping solid state lasers or for direct diode laser applications are examined. The benefit and utility of each package is strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made.

  20. Study on the characteristic and application of DFB semiconductor lasers under optical injection for microwave photonics (United States)

    Pu, Tao; Wang, Wei wei


    In order to apply optical injection effect in Microwave Photonics system, The red-shift effect of the cavity mode of the DFB semiconductor laser under single-frequency optical injection is studied experimentally, and the red-shift curve of the cavity mode is measured. The wavelength-selective amplification property of the DFB semiconductor laser under multi-frequency optical injection is also investigated, and the gain curves for the injected signals in different injection ratios are measured in the experiment. A novel and simple structure to implement a single-passband MPF with wideband tunability based on the wavelength-selective amplification of a DFB semiconductor laser under optical injection is proposed and experimentally demonstrated. MPFs with center frequency tuned from 13 to 41 GHz are realized in the experiment. A wideband and frequency-tunable optoelectronic oscillator based on a directly modulated distributed feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. By optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency makes the loop oscillate without the necessary of the electrical filter. An experiment is performed; microwave signals with frequency tuned from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers.

  1. Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis

    International Nuclear Information System (INIS)

    Müller, M; Gault, B; Smith, G D W; Grovenor, C R M


    Atom probe tomography has recently experienced a renaissance, strongly promoted by the revival of pulsed laser atom probe. The technique is now widely employed to study semiconductor materials at the nanometre level. This paper summarises some aspects of the accuracy of pulsed laser atom probe relevant to semiconductor applications. It is shown that laser pulsing can reduce the lateral resolution due to thermally stimulated surface migration. Moreover, the commonly observed cluster ions can undergo field dissociation which results in an increased probability of ion loss due to pile-up effects at the detector. Field dissociation can also induce a new type of local magnification that increases spatial inaccuracy in the data reconstruction. These effects can be reduced by an appropriate choice of experimental parameters. Despite these difficulties, the atom probe technique can provide unparalleled insight into the nanoscale structure and chemistry of a wide range of semiconductor devices.

  2. Simultaneous generation of wavelength division multiplexing PON and RoF signals using a hybrid mode-locked laser (United States)

    Aldaya, Ivan; Campuzano, Gabriel; Castañón, Gerardo


    The use of millimeter-wave (mm-wave) frequencies has been proposed to overcome the imminent saturation of the ultra high frequency band, justifying research on radio over fiber (RoF) networks as an inexpensive and green solution to distribute multi-Gbps signals. Coincidently, telecommunication operators are investing a significant effort to deploy their passive optical network (PON) infrastructure closer to the users. In this work, we present a novel cost-efficient architecture based on a hybrid mode locked laser capable to simultaneously generate up-to 5 wavelength division multiplexing PON and RoF channels, being compatible with the 50-GHz ITU frequency grid. We analyze the limits of operation of our proposed architecture considering the high modal relative intensity noise induced by mode partition noise, as well as fiber impairments, such as chromatic dispersion and nonlinearities. The feasibility of generation and transmission of 5×10-Gbps PON and 5×5-Gbps RoF using orthogonal frequency division multiplexing up to 50 km has been demonstrated through realistic numerical simulations.

  3. Chair-like pulses in an all-normal dispersion Ytterbium-doped mode-locked fiber laser. (United States)

    Gupta, Pradeep K; Singh, Chandra P; Singh, Amarjeet; Sharma, Sunil K; Mukhopadhyay, Pranab K; Bindra, Kushvinder S


    We report, for what we believe is the first time, generation of stable chair-like pulses (a pulse shape with an initial long flat portion followed by a short high peak power portion resembling the shape of a chair) by mode locking of a Ytterbium (Yb)-doped fiber laser. Chair-like pulse shapes are achieved by implementing dual saturable absorbers, one based on a nonlinear optical loop mirror (NOLM) and the other based on nonlinear polarization rotation (NPR) inside the cavity. The transmission characteristics of the NOLM-NPR pair leading to the formation of chair-like pulses are numerically investigated. We also report the amplification characteristics of chair-like pulses in an external multistage Yb-doped fiber amplifier setup at different repetition rates of the pulse train. It was found that the chair-like pulses are suitable for amplification, and more than 10 W of average power at 460 kHz repetition rate have been obtained at total pump power of ∼20  W coupled to the power amplifier. At a lower repetition rate (115 kHz), ∼8  W of average power were obtained corresponding to ∼70  μJ of pulse energy with negligible contribution from amplified spontaneous emission or stimulated Raman scattering. We believe that such an oscillator-amplifier system could serve as an attractive tool for micromachining applications.

  4. 980-nm 14-pin butterfly module dual-channel CW QW semiconductor laser for pumping (United States)

    Deng, Yun; Yan, Changling; Qu, Yi; Li, Hui; Wang, Yuxia; Gao, Xin; Qiao, Zhongliang; Li, Mei; Qu, Bowen; Lu, Peng; Bo, Baoxue


    Nowadays, with its mature progress, the 790 nm - 1000 nm wavelength semiconductor laser is widely used in the fields of laser machining, laser ranging, laser radar, laser imaging, laser anti-counterfeit, biomedical and etc. Best of all, the 980 nm wavelength laser has its widespread application in the pumping source of Er3+ -doped fiber amplifier, optic fiber gyroscopes and other devices. The output wavelength of the fiber amplifier which takes the 980 nm wavelength laser as its pumping source is between 1060 nm and 1550 nm. This type of laser has its extremely wide range of applications in optical communication and other fields. Moreover, some new application domains keep constantly being developed. The semiconductor laser with the dual-channel ridge wave guide and the 980 nm emission wavelength is presented in this paper. In our work, we fabricated Lasers with the using of multi-quantum well (MQW) wafer grew by MBE, and the PL-wavelength of the MQW was 970 nm. The standard photofabrication method and the inductively coupled plasma (ICP) etching technology are adopted in the process of making dual-channel ridge wave guide with the width of 4 μm and height of 830 nm. In the state of continuous work at room temperature, the laser could output the single mode beam of 70 mW stably under the current of 100 mA. The threshold current of the laser diode is 17 mA and the slope efficiency is 0.89 W/A. The 3 dB spectrum bandwidth of the laser beam is 0.2 nm. This laser outputs its beam by a pigtail fiber on which Bragg grating for frequency stabilization is carved. The laser diode, the tail fiber, and the built-in refrigeration and monitoring modules are sealed in a 14-pin butterfly packaging. It can be used directly as the pumping source of Er3+ - doped fiber amplifier or optic fiber gyroscopes.

  5. A review of energy bandgap engineering in III V semiconductor alloys for mid-infrared laser applications (United States)

    Yin, Zongyou; Tang, Xiaohong


    Semiconductor lasers emitting in mid-infrared (IR) range, 2-5 μm, have many important applications in semiconductor industries, military, environmental protection, telecommunications, molecular spectroscopy, biomedical surgery and researches. Different designs of the reactive regions in mid-IR laser structures have been investigated for achieving high performance devices. In this article, semiconductor mid-IR lasers with double heterostructure, quantum well, quantum cascade, quantum wire, quantum dash and quantum dot active regions have been reviewed. The performance of the lasers with these different active regions and the development of the newly emerging III-V-N materials for mid-IR applications have been discussed in details.

  6. Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

    International Nuclear Information System (INIS)

    Cotta, E A; Matinaga, F M


    We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

  7. Prospects and merits of metal-clad semiconductor lasers from nearly UV to far IR


    Khurgin, Jacob B.


    Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, wit...

  8. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating (United States)

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin


    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  9. Tests and Analysis of Electromagnetic Models for Semiconductor-Metal Quantum-Well Lasers (United States)

    Shih, Meng-Mu


    This work tests the proposed electromagnetic models for quantum-well lasers by using several materials of semiconductors and metals. Different combinations of semiconductors and metals can generate various wavelengths and mode-couplings in such semiconductor waveguide structures with built-in metal-gratings. The numerical results of these models are computed by the photonic approach and verified by the optical approach. Even for the weak mode-coupling cases, the numerical results computed by both approaches have close values. Numerical results with post-analysis can summarize how the key parameters, such as grating geometry, well thickness, and layer thickness, affect the mode-couplings. The above results can be further interpreted by physics intuition and fundamental concepts so as to provide insights into the modeling and design of lasers for more applications.

  10. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao


    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  11. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.


    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  12. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus


    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  13. Study on biological effect on mice and use safety of 830 nm semiconductor laser

    International Nuclear Information System (INIS)

    Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang


    Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

  14. Spatial and Spectral Brightness Enhancement of High Power Semiconductor Lasers (United States)

    Leidner, Jordan Palmer

    The performance of high-power broad-area diode lasers is inhibited by beam filamentation induced by free-carrier-based self-focusing. The resulting beam degradation limits their usage in high-brightness, high-power applications such as pumping fiber lasers, and laser cutting, welding, or marking. Finite-difference propagation method simulations via RSoft's BeamPROP commercial simulation suite and a custom-built MATLAB code were used for the study and design of laser cavities that suppress or avoid filamentation. BeamPROP was used to design a tapered, passive, multi-mode interference cavity for the creation of a self-phase-locking laser array, which is comprised of many single-mode gain elements coupled to a wide output coupler to avoid damage from local high optical intensities. MATLAB simulations were used to study the effects of longitudinal and lateral cavity confinement on lateral beam quality in conventional broad-area lasers. This simulation was expanded to design a laser with lateral gain and index prescription that is predicted to operate at or above state-of-the-art powers while being efficiently coupled to conventional telecom single-mode optical fibers. Experimentally, a commercial broad-area laser was coupled in the far-field to a single-mode fiber Bragg grating to provide grating-stabilized single-mode laser feedback resulting in measured spectral narrowing for efficient pump absorption. Additionally a 19 GHz-span, spatially resolved, self-heterodyne measurement was made of a broad-area laser to study the evolution/devolution of the mode content of the emitted laser beam with increasing power levels.

  15. Laser beam shaping optical system design methods and their application in edge-emitting semiconductor laser-based LIDAR systems (United States)

    Serkan, Mert

    LIDAR (Light Detection And Ranging) systems are employed for numerous applications such as remote sensing, military applications, optical data storage, display technology, and material processing. Furthermore, they are superior to other active remote sensing tools such as RADAR systems, considering their higher accuracy and more precise resolution due to their much shorter wavelengths and narrower beamwidth. Several types of lasers can be utilized as the radiation source of several LIDAR systems. Semiconductor laser-based LIDAR systems have several advantages such as low cost, compactness, broad range of wavelengths, and high PRFs (Pulse Repetition Frequency). However, semiconductor lasers have different origins and angles of divergence in the two transverse directions, resulting in the inherent astigmatism and elliptical beam shape. Specifically, elliptical beam shape is not desirable for several laser-based applications including LIDAR systems specifically designed to operate in the far-field region. In this dissertation, two mirror-based and two lens-based beam shapers are designed to circularize, collimate, and expand an edge-emitting semiconductor laser beam to a desired beam diameter for possible application in LIDAR systems. Additionally, most laser beams including semiconductor laser beams have Gaussian irradiance distribution. For applications that require uniform illumination of an extended target area, Gaussian irradiance distribution is undesirable. Therefore, a specific beam shaper is designed to transform the irradiance distribution from Gaussian to uniform in addition to circularizing, collimating, and expanding the semiconductor laser beam. For the design of beam shapers, aperture sizes of the surfaces are preset for desired power transmission and allowed diffraction level, surface parameters of the optical components and the distances between these surfaces are determined. Design equations specific to these beam shaping optical systems are

  16. A High Reliability Frequency Stabilized Semiconductor Laser Source Project (United States)

    National Aeronautics and Space Administration — NASA needs high stability laser source of 1W output power for Lidar applications. Princeton Optronics has developed ultra-stable, narrow linewidth diode pumped solid...

  17. Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I (United States)

    National Aeronautics and Space Administration — This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered ....

  18. Application of laser spot cutting on spring contact probe for semiconductor package inspection (United States)

    Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan


    A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

  19. Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser (United States)

    Holub, M.; Shin, J.; Saha, D.; Bhattacharya, P.


    A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.

  20. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate (United States)

    Mazur, Eric [Concord, MA; Shen, Mengyan [Arlington, MA


    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  1. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate (United States)

    Mazur, Eric; Shen, Mengyan


    The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  2. Doppler wind lidar using a MOPA semiconductor laser at stable single-frequency operation

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    A compact master-oscillator power-amplifier semiconductor laser (MOPA-SL) is a good candidate for a coherent light source (operating at 1550 nm) in a Doppler wind Lidar. The MOPA-SL requires two injection currents: Idfb for the distributed-feedback (DFB) laser section (master oscillator) and Iamp...... for the tapered amplifier section. The specified maximum current values are 0.7 A and 4.0 A for Idfb and Iamp. Although the MOPA-SL has been proven capable of producing single-frequency CW output beam, stable operation at this spectral condition has also been known to highly depend on the drive currents...... to the laser. This was done by observing the spectral characteristic of the laser using an optical spectrum at different drive current combinations. When using the laser for a Doppler wind Lidar application, a combination of (Idfb, Iamp) which is close to the center of an identified stable single...

  3. Effects of gain medium parameters on the sensitivity of semiconductor ring laser gyroscope (United States)

    Khandelwal, Arpit; Hossein, Y. S.; Syed, Azeemuddin; Sayeh, M. R.; Nayak, Jagannath


    The semiconductor gain medium has rich non-linear dynamics and several internal parameters influence the generation and propagation of light through it. With the gain medium being an integral part of semiconductor ring laser gyroscope (SRLG) cavity, its parameters affect the overall performance of the gyro. The effect is further elevated in integrated SRLG due to stronger confinement of charge carriers and photons leading to a more intense interaction between them. In this paper, we evaluate the influence of semiconductor gain medium parameters such as gain saturation coefficient, linewidth, internal quantum efficiency etc. on the sensitivity of bulk fiber-optic SRLG. Ways of controlling these parameters and optimizing their values to enhance the performance of SRLG are also discussed.

  4. Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT) (United States)


    image of AlSb /GaSb superlattices produced prior to laser growth. InxGa1xSb structures are also produced to calibrate in- dium composition in the quantum...HR-XRD H2H rocking curves of AlSb /GaSb superlattices along with calculated diffraction pattern, represent- ing faithful reproduction material

  5. Hair removal using an 810 nm gallium aluminum arsenide semiconductor diode laser: A preliminary study. (United States)

    Williams, R M; Gladstone, H B; Moy, R L


    Laser hair removal is a popular treatment method for removing unwanted hair. Several laser systems are available for laser hair removal. The gallium aluminum arsenide semiconductor diode (GAASD) laser is one of the newer laser modalities to be studied. To evaluate the efficacy of the GAASD laser system in removing unwanted hair. Twenty-six patients with brown or black hair growth were treated with the GAASD laser at fluences of 20-80 J/cm2. Hair regrowth was measured 4 weeks after the first treatment, 4 weeks after the second treatment, 4 weeks after the third treatment, and 4 weeks, 8 weeks, and 8 months after the fourth treatment. GAASD laser treatment resulted in hair growth delay in all treated regions. Repeated laser treatments did not produce an increased number of vellus hairs. The percentage of hair reduction fluctuated between 5% and 13% with the second or third treatment averaging the highest percent reduction. In all cases, the percentage of hair reduction of the treatment sites evaluated at 8 months after the fourth treatment was less than both the second and third treatments (highest average percent reduction) and the fourth (last) treatment.

  6. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments (United States)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas


    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  7. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G


    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  8. Solid-State Laser Engineering

    CERN Document Server

    Koechner, Walter


    Written from an industrial perspective, Solid-State Laser Engineering discusses in detail the characteristics, design, construction, and performance of solid-state lasers. Emphasis is placed on engineering and practical considerations; phenomenological aspects using models are preferred to abstract mathematical derivations. Since its first edition almost 30 years ago this book has become the standard in the field of solid-state lasers for scientists,engineers and graduate students. This new edition has been extensively revised and updated to account for recent developments in the areas of diode-laser pumping, laser materials and nonlinear crystals. Completely new sections have been added dealing with frequency control, the theory of mode-locking, femto second lasers, high efficiency harmonic generation, passive and acousto-optic Q-switching, semiconductor saturable absorber mirrors (SESAM) and peridically poled nonlinear crystals.

  9. Influence of Carrier Cooling on the Emission Dynamics of Semiconductor Microcavity Lasers (United States)

    Hilpert, M.; Hofmann, M.; Ellmers, C.; Oestreich, M.; Schneider, H. C.; Jahnke, F.; Koch, S. W.; Rühle, W. W.; Wolf, H. D.; Bernklau, D.; Riechert, H.


    We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.

  10. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth


    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...... traveling-wave model. The dynamics of the low-frequency fluctuations are explained qualitatively in terms of bistability through an iterative description...

  11. Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors (United States)


    N. Rubido, J. Tiana-Alsina, M. C. Torrent , and C. Masoller, Distinguishing signatures of deter- minism and stochasticity in spiking complex systems...Cohen, A. Aragoneses, D. Rontani, M. C. Torrent , C. Masoller and D. J. Gauthier, Multidimensional subwavelength position sensing using a...semiconductor laser with optical feedback, Opt. Lett. 38, 4331 (2013). Download 10. A. Aragoneses, T. Sorrentino, S. Perrone, D. J. Gauthier, M. C. Torrent and C

  12. Modelling laser-induced phase transformations in semiconductors

    Czech Academy of Sciences Publication Activity Database

    Gatskevich, E.; Přikryl, Petr; Ivlev, G.


    Roč. 76, č. 1 (2007), s. 65-72 ISSN 0378-4754. [MODELLING 2005. Plzeň, 04.07.2005-08.07.2005] R&D Projects: GA ČR GA201/04/1503 Institutional research plan: CEZ:AV0Z10190503 Keywords : laser-induced phase transitions * moving boundary problem * non-equilibrium phase changer Subject RIV: BA - General Mathematics Impact factor: 0.738, year: 2007

  13. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira


    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  14. Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers (United States)

    Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan


    A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

  15. Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers (United States)

    Junges, Leandro; Gallas, Jason A. C.


    The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang-Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay -time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail.

  16. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors. (United States)

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A


    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. Improvements to tapered semiconductor MOPA laser design and testing (United States)

    Beil, James A.; Shimomoto, Lisa; Swertfeger, Rebecca B.; Misak, Stephen M.; Campbell, Jenna; Thomas, Jeremy; Renner, Daniel; Mashanovitch, Milan; Leisher, Paul O.; Liptak, Richard W.


    This paper expands on previous work in the field of high power tapered semiconductor amplifiers and integrated master oscillator power amplifier (MOPA) devices. The devices are designed for watt-class power output and single-mode operation for free-space optical communication. This paper reports on improvements to the fabrication of these devices resulting in doubled electrical-to-optical efficiency, improved thermal properties, and improved spectral properties. A newly manufactured device yielded a peak power output of 375 mW continuous-wave (CW) at 3000 mA of current to the power amplifier and 300 mA of current to the master oscillator. This device had a peak power conversion efficiency of 11.6% at 15° C, compared to the previous device, which yielded a peak power conversion efficiency of only 5.0% at 15° C. The new device also exhibited excellent thermal and spectral properties, with minimal redshift up to 3 A CW on the power amplifier. The new device shows great improvement upon the excessive self-heating and resultant redshift of the previous device. Such spectral improvements are desirable for free-space optical communications, as variation in wavelength can degrade signal quality depending on the detectors being used and the medium of propagation.

  18. Spontaneous exchange of leader-laggard relationship in mutually coupled synchronized semiconductor lasers. (United States)

    Kanno, Kazutaka; Hida, Takuya; Uchida, Atsushi; Bunsen, Masatoshi


    We investigate the instantaneous behavior of synchronized temporal wave forms in two mutually coupled semiconductor lasers numerically and experimentally. The temporal wave forms of two lasers are synchronized with a propagation delay time, with one laser oscillating in advance of the other, known as the leader-laggard relationship. The leader-laggard relationship can be determined by measuring the cross-correlation between the two temporal wave forms with the propagation delay time. The leader can be identified when the optical carrier frequency of the leader laser is higher than that of the other laser. However, spontaneous exchange between the leader and laggard lasers can be observed in low-frequency fluctuations by short-term cross-correlation measurements, even for a fixed initial optical frequency detuning. The spontaneous exchange of the leader-laggard relationship originates from alternation of partial optical frequency locking between the two lasers. This observation is analyzed using a phase space trajectory on steady-state solutions for mutually coupled lasers with optical frequency detuning.

  19. Subpicometer Length Measurement Using Semiconductor Laser Tracking Frequency Gauge (United States)

    Thapa, Rajesh; Phillips, James D.; Rocco, Emanuele; Reasenburg, Robert D.


    We have demonstrated heretofore unattained distance precision of 0:14pm (2pm) incremental and 14nm (2.9 micrometers) absolute in a resonant (nonresonant) interferometer at an averaging time of 1 s, using inexpensive telecommunications diode lasers. We have controlled the main source of error, that due to spurious reflection and the resulting amplitude modulation. In the resonant interferometer, absolute distance precision is well under lambda/6. Therefore, after an interruption, an absolute distance measurement can be used to return to the same interferometer order.

  20. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.


    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  1. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar


    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  2. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.


    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  3. All-fiber interferometer-based repetition-rate stabilization of mode-locked lasers to 10-14-level frequency instability and 1-fs-level jitter over 1  s. (United States)

    Kwon, Dohyeon; Kim, Jungwon


    We report on all-fiber Michelson interferometer-based repetition-rate stabilization of femtosecond mode-locked lasers down to 1.3×10 -14 frequency instability and 1.4 fs integrated jitter in a 1 s time scale. The use of a compactly packaged 10 km long single-mode fiber (SMF)-28 fiber link as a timing reference allows the scaling of phase noise at a 10 GHz carrier down to -80  dBc/Hz at 1 Hz Fourier frequency. We also tested a 500 m long low-thermal-sensitivity fiber as a reference and found that, compared to standard SMF-28 fiber, it can mitigate the phase noise divergence by ∼10  dB/dec in the 0.1-1 Hz Fourier frequency range. These results suggest that the use of a longer low-thermal-sensitivity fiber may achieve sub-femtosecond integrated timing jitter with sub-10 -14 -level frequency instability in repetition rate by a simple and robust all-fiber-photonic method.

  4. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)


    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  5. All-fiber Ho-doped mode-locked oscillator based on a graphene saturable absorber

    Czech Academy of Sciences Publication Activity Database

    Sotor, J.; Pawliszewska, M.; Sobon, G.; Kaczmarek, P.; Przewolka, A.; Pasternak, I.; Cajzl, Jakub; Peterka, Pavel; Honzátko, Pavel; Kašík, Ivan; Strupinski, W.; Abramski, K.


    Roč. 41, č. 11 (2016), s. 2592-2595 ISSN 0146-9592 R&D Projects: GA ČR GA14-35256S; GA MŠk(CZ) LD15122 Institutional support: RVO:67985882 Keywords : Fiber lasers * Graphene * Mode-locked oscillators Subject RIV: BH - Optics , Masers, Lasers Impact factor: 3.416, year: 2016

  6. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Directory of Open Access Journals (Sweden)

    Min Zhao


    Full Text Available Objective: To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery. Methods: A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded. Results: The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05. The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05. The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05. The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05. The average healing time in the treatment group was significantly faster than that in the control group (P<0.05. Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  7. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter


    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...... parameter dependencies are simply explained by the calculated return-maps. Our approach partly decouples the slow and the fast time-scale behaviour. The latter is often described in terms of chaotic itinerary, but this does not provide an explanation for the low-frequency fluctuations themselves....

  8. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.


    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...... based on the Green's function method is used for that purpose. Simple expressions for the linewidth in the case of AR-coated SOA output facets are derived and simulation results are given in the case of an output facet with a non-vanishing reflectivity. It is found that optimal conditions for a narrow...

  9. Field performance of an all-semiconductor laser coherent Doppler lidar

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds...... measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable...

  10. Semiconductor laser having a non-absorbing passive region with beam guiding (United States)

    Botez, Dan (Inventor)


    A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

  11. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.


    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived...... and simulation results are given in the case of output facets with a nonvanishing reflectivity. A numerical model combining finite-element calculations in the transverse x-y plane and a longitudinal model based on the Green's function method is used for that purpose....

  12. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica


    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  13. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song


    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  14. Laser-induced cluster-ions from thin foils of metals and semiconductors

    International Nuclear Information System (INIS)

    Fuerstenau, N.; Hillenkamp, F.


    Interaction of focused, very high-energy pulses of UV laser light of some 10 8 W cm -2 with thin foils of metals and semiconductors induces solid-gas phase-transitions and ionization of microvolumes of the target material. Mass-spectrometric analysis of the microplasma reveals singly ionized cluster-ions as final products of the interaction processes. Cluster-ion distributions are measured and compared with those obtained in thermal evaporation, high-frequency spark and SIMS experiments. The distributions are shown to be characteristic of the investigated material. While some of their features can be understood in terms of theories of cluster stability, other qualities, also observed in SIMS and evaporation experiments, are thought to be due to the partially non-equilibrium character of the solid-gas phase-transition. Furthermore, estimations concerning parameters of the laser-induced microplasma can be drawn from the distributions. (orig.)

  15. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S


    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  16. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers (United States)

    Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang


    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

  17. Comparative study of the performance of semiconductor laser based coherent Doppler lidars

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

  18. New semiconductor laser technology for gas sensing applications in the 1650nm range (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris


    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  19. GaN nanostructure-based light emitting diodes and semiconductor lasers. (United States)

    Viswanath, Annamraju Kasi


    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  20. Selective mode coupling in microring resonators for single mode semiconductor lasers (United States)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  1. Cubic zirconia as a high-quality facet coating for semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chin, A.K.; Satyanarayan, A.; Zarrabi, J.H.; Vetterling, W.


    In this paper we describe the properties of high-quality, semiconductor laser facet coatings based on yttria-stabilizied cubic zirconia (90-m% ZrO/sub 2//10-m% Y/sub 2/O/sub 3/). We have found that cubic zirconia films can be reproducibly deposited by electron-beam evaporation with an index of refraction of 1.98 at 6328 A, almost ideal for use as a single-layer antireflection coating for GaAs/GaAlAs-based lasers. ZrO/sub 2/ has a monoclinic crystal structure at room temperature, but changes to tetragonal, hexagonal, and cubic phases upon heating to higher temperatures. However, the addition of the Y/sub 2/O/sub 3/ stabilizes ZrO/sub 2/ in the cubic form, thus allowing electron-beam deposition of thin films of this material to be more controllable and reproducible without the usual addition of oxygen into the vacuum chamber during deposition. Preliminary aging tests of high-power GaAs/GaAlAs lasers show that cubic zirconia films suppress the photo-enhanced oxidation of laser facets that degrades device performance.

  2. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning


    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  3. Bifurcation to square-wave switching in orthogonally delay-coupled semiconductor lasers: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Masoller, C. [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, ES-08222 Terrassa, Barcelona (Spain); Sukow, D. [Institute for Cross-Disciplinary Physics and Complex Systems, Campus Universitat de les Illes Balears, ES-07122 Palma de Mallorca (Spain); Gavrielides, A. [Air Force Research Laboratory, AFRL/EOARD, 86 Blenheim Crescent, Ruislip Middlesex HA4 7HB (United Kingdom); Sciamanna, M. [Optics and Electronics (OPTEL) Research Group, Laboratoire Materiaux Optiques, Photonique et Systemes (LMOPS), Supelec, 2 Rue Edouard Belin, FR-57070 Metz (France)


    We analyze the dynamics of two semiconductor lasers with so-called orthogonal time-delayed mutual coupling: the dominant TE (x) modes of each laser are rotated by 90 deg. (therefore, TM polarization or y) before being coupled to the other laser. Although this laser system allows for steady-state emission in either one or in both polarization modes, it may also exhibit stable time-periodic dynamics including square waveforms. A theoretical mapping of the switching dynamics unveils the region in parameter space where one expects to observe long-term time-periodic mode switching. Detailed numerical simulations illustrate the role played by the coupling strength, the mode frequency detuning, or the mode gain to loss difference. We complement our theoretical study with several experiments and measurements. We present time series and intensity spectra associated with the characteristics of the square waves and other waveforms observed as a function of the strength of the delay coupling. The experimental observations are in very good agreement with the analysis and the numerical results.

  4. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    International Nuclear Information System (INIS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael


    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  5. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael


    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  6. High temperature semiconductor diode laser pumps for high energy laser applications (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel


    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  7. Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers (United States)

    Li, J.; Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)


    A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum

  8. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices (United States)

    Horn, Kevin M.


    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  9. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation (United States)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  10. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael


    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  11. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)



    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  12. Thermal stability of multi-longitudinal mode laser beating frequencies in hybrid semiconductor-fiber ring lasers (United States)

    Shebl, Ahmed; Hassan, Khaled; Al-Arifi, Fares; Al-Otaibi, Mohammed; Sabry, Yasser; Khalil, Diaa


    The temperature dependence of the beating frequencies in multi-longitudinal mode hybrid semiconductor-fiber based ring lasers is studied theoretically and experimentally. The variation of the beating frequency with temperature is found to be smaller for larger cavity length and lower beating order. Measured frequency variation as low as -0.24 Hz/°C is obtained for cavity length of 2.7 km. The stability of the frequency is evaluated using the Allan variance technique. The measurement is carried out for different beating frequency orders. The lowest order beating frequency has about 20x better long-term frequency stability than the beating frequency of the 100th order.

  13. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    Directory of Open Access Journals (Sweden)

    Medvid Artur


    Full Text Available Abstract On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity.

  14. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto


    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  15. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    International Nuclear Information System (INIS)

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P.


    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 μm complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate ω 0.5 filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging

  16. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL) (United States)

    McInerney, John G.


    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  17. Analytical identification of soliton dynamics in normal-dispersion passively mode-locked fiber lasers: from dissipative soliton to dissipative soliton resonance. (United States)

    Lin, Wei; Wang, Simin; Xu, Shanhui; Luo, Zhi-Chao; Yang, Zhongmin


    A combined analytical approach to classify soliton dynamics from dissipative soliton to dissipative soliton resonance (DSR) is developed based on the established laser models. The approach, derived from two compatible analytical solutions to the complex cubic-quintic Ginzburg-Landau equation (CQGLE), characterizes the pulse evolution process from both algebraic and physical points of view. The proposed theory is proved to be valid in real world laser oscillators according to numerical simulations, and potentially offers guideline on the design of DSR cavity configurations.

  18. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers (United States)

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang


    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley – Read – Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  19. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)


    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  20. Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

    Energy Technology Data Exchange (ETDEWEB)

    Tronciu, V Z; Mirasso, Claudio R; Colet, Pere [Instituto de Fisica Interdisciplinar y Sistemas Complejos (IFISC) CSIC-UIB, Campus Universitat de les Illes Balears, E-07122 Palma de Mallorca (Spain)], E-mail:


    We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed.

  1. Active layer position optimization in asymmetric AlGaInAs/AlGaAs semiconductor laser diode structures (United States)

    Abbasi, Seyed Peyman; Mahdieh, Mohammad Hossein


    In semiconductor lasers design, asymmetric structure can be used to improve laser characteristics. In this paper we proposed asymmetric AlGaInAs/AlGaAs structure for 808 nm laser diode to increase the n-cladding layer effect in beam propagation. In our proposed design, the active layer position in waveguide region was optimized for obtaining maximum optical power and minimum threshold current. The results show that the active layer position in waveguide related linearly to the asymmetric parameter. The results also show that in compare with usual structure, our proposed asymmetric structure can enhance the optical fiber coupling efficiency.

  2. High-resolution retinal swept source optical coherence tomography with an ultra-wideband Fourier-domain mode-locked laser at MHz A-scan rates. (United States)

    Kolb, Jan Philip; Pfeiffer, Tom; Eibl, Matthias; Hakert, Hubertus; Huber, Robert


    We present a new 1060 nm Fourier domain mode locked laser (FDML laser) with a record 143 nm sweep bandwidth at 2∙ 417 kHz  =  834 kHz and 120 nm at 1.67 MHz, respectively. We show that not only the bandwidth alone, but also the shape of the spectrum is critical for the resulting axial resolution, because of the specific wavelength-dependent absorption of the vitreous. The theoretical limit of our setup lies at 5.9 µm axial resolution. In vivo MHz-OCT imaging of human retina is performed and the image quality is compared to the previous results acquired with 70 nm sweep range, as well as to existing spectral domain OCT data with 2.1 µm axial resolution from literature. We identify benefits of the higher resolution, for example the improved visualization of small blood vessels in the retina besides several others.

  3. Analysis of soft-aperture Kerr-lens mode-locking in Ti:sapphire laser cavities using nonlinear ABCD-matrix

    International Nuclear Information System (INIS)

    Lee, Yong Woo; Cha, Yong Ho; Rhee, Yong Joo; Yoo, Byung Duk; Lee, Byoung Chul


    We have numerically analyzed the effect of soft-aperture Kerr-lens mode locking in Ti:sapphire laser cavities. Because the Kerr-lens effect depends on the intracavitiy power, we used nonlinear ABCD-matrix to calculated the power-dependent beam mode inside a cavity. In soft-aperture Kerr-lens mode locking, the Kerr-lens effect is strongly dependent on the position of the crystal, the separation of two curved mirrors, and the cavity length. Figure 1 is the schematic of the Ti:sapphire laser cavity used in our calculation. It consists of a Ti:sapphire crystal (Kerr medium), two curved mirrors, and flat mirrors. Lc is the Ti:sapphire crystal length, D1 the length between M1 and M3, D2 the length between M2 and M4, L1 the length between the crystal and M1, and L2 the length between crystal and M2

  4. Comparison of Monolithic Optical Frequency Comb Generators Based on Passively Mode-Locked Lasers for Continuous Wave mm-Wave and Sub-THz Generation

    DEFF Research Database (Denmark)

    Criado, A. R.; de Dios, C.; Acedo, P.


    is carried out based on an automated measurement system that systematically evaluates the dynamic characteristics of the devices, focusing on the figures of merit that define the optimum performance of a pulsed laser source when considered as an OFCG. Sub-THz signals generated with both devices at 60 GHz...... topologies that can be used for the implementation of photonic integrated sub-THz CW generation....

  5. On the jitter of mode-locked pulses introduced by an optical fibre

    NARCIS (Netherlands)

    Mols, R.F.X.A.M.; Mols, R.F.X.A.M.; Ernst, G.J.


    Measurements on the jitter of mode-locked pulses of a Nd:YLF laser after travelling through an optical fibre are presented. For low powers self phase modulation occurs which leaves the jitter unaltered. For powers higher than the threshold of stimulated Raman scattering the jitter increases due to

  6. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm (United States)

    Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.


    Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

  7. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback.

    Directory of Open Access Journals (Sweden)

    Boon Leong Lan

    Full Text Available Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation.

  8. Study of simulations q-switching and mode-locking in Nd:YVO4 laser with Cr4+:YAG crystal

    International Nuclear Information System (INIS)

    Al-Sous, M. B.


    A numerical model of rate equations for a four-level solid-state laser with Cr 4+ :YAG saturable absorber including excited state absorption ESA is presented. The cavity is divided into a large number of disks and the model is solved for each disk and its local corresponding photon flux. The flux array is shifted for each recurrence simulating the movement of photons inside the cavity during the round trip. This simulator can describe the mode locking phenomenon and can be used to simulate the simultaneous mode locking and Q-switching with a saturable absorber.(author)

  9. Key Topics in Producing New Ultraviolet Led and Laser Devices Based on Transparent Semiconductor Zinc Oxide

    International Nuclear Information System (INIS)

    Tuezemen, S.


    Recently, it has been introduced that ZnO as II-VI semiconductor is promising various technological applications, especially for optoelectronic short wavelength light emitting devices due to its wide and direct band gap profile. The most important advantage of ZnO over the other currently used wide band gap semiconductors such as GaN is that its nearly 3 times higher exciton binding energy (60 meV), which permits efficient excitonic emission at room temperature and above. As-grown ZnO is normally n-type because of the Zn-rich defects such as zinc interstitials (Zn i ) oxygen vacancies (Vo), natively acting as shallow donors and main source of n-type conductivity in as-grown material. Therefore, making p-type ZnO has been more difficult due to unintentional compensation of possible acceptors by these residual donors. In order to develop electro luminescent and laser devices based on the ultraviolet (UV) exciton emission of ZnO, it will be important to fabricate good p-n junctions. Attempts to observe p-type conductivity in ours and our collaborators' laboratories in USA, either by co-doping with N or tuning O pressure have been first successful achievements, resulting in hole concentrations up to 10 1 9 cm - 3 in reactively sputtered thin layers of ZnO. Moreover, in order to produce ZnO based quantum well lasers similar to the previously introduced n-AlGaAs/GaAs/p-AlGaAs structures; we have attempted to grow Zn 1 -xSn x O thin films to enlarge the band gap energy. An increase up to 170 meV has been observed in Zn 1 -xSn x O thin films and this is enough barrier to be able to trap electron-hole pairs in quantum well structures. As a result, two important key issues; p-type conductivity and enhancement of the band gap energy in order to step forward towards the production of electro luminescent UV LEDs and quantum well lasers have been investigated and will be presented in this study

  10. High-speed polarization-sensitive OCT at 1060 nm using a Fourier domain mode-locked swept source

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Torzicky, Teresa; Klein, Thomas


    sufficiently large datasets. Here, we demonstrate PS-OCT imaging at 350 kHz A-scan rate using a two-channel PS-OCT system in conjunction with a Fourier domain mode-locked laser. The light source spectrum spans up to 100nm around the water absorption minimum at 1060 nm. By modulating the laser pump current, we...

  11. Passively mode-locked fiber laser based on a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution. (United States)

    Liu, Zhi-Bo; He, Xiaoying; Wang, D N


    We demonstrate a nanosecond-pulse erbium-doped fiber laser that is passively mode locked by a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution. Owing to the good solution processing capability of few-layered graphene oxide, which can be filled into the core of a hollow-core photonic crystal fiber through a selective hole filling process, a graphene saturable absorber can be successfully fabricated. The output pulses obtained have a center wavelength, pulse width, and repetition rate of 1561.2 nm, 4.85 ns, and 7.68 MHz, respectively. This method provides a simple and efficient approach to integrate the graphene into the optical fiber system. © 2011 Optical Society of America

  12. Final report on LDRD project: Semiconductor surface-emitting microcavity laser spectroscopy for analysis of biological cells and microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; McDonald, A.E. [Sandia National Labs., Albuquerque, NM (United States). Nanostructure and Semiconductor Physics Dept.; Gourley, M.F. [Washington Hospital Center, DC (United States); Bellum, J. [Coherent Technologies, Boulder, CO (United States)


    This article discusses a new intracavity laser technique that uses living or fixed cells as an integral part of the laser. The cells are placed on a GaAs based semiconductor wafer comprising one half of a vertical cavity surface-emitting laser. After placement, the cells are covered with a dielectric mirror to close the laser cavity. When photo-pumped with an external laser, this hybrid laser emits coherent light images and spectra that depend sensitively on the cell size, shape, and dielectric properties. The light spectra can be used to identify different cell types and distinguish normal and abnormal cells. The laser can be used to study single cells in real time as a cell-biology lab-on-a-chip, or to study large populations of cells by scanning the pump laser at high speed. The laser is well-suited to be integrated with other micro-optical or micro-fluidic components to lead to micro-optical-mechanical systems for analysis of fluids, particulates, and biological cells.

  13. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji


    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  14. Monolithic all-PM femtosecond Yb-fiber laser stabilized with a narrow-band fiber Bragg grating and pulse-compressed in a hollow-core photonic crystal fiber

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper


    We report on an environmentally stable self-starting monolithic (i.e. without any free-space coupling) all-polarization-maintaining (PM) femtosecond Yb-fiber laser, stabilized against Q-switching by a narrow-band fiber Bragg grating and modelocked using a semiconductor saturable absorber mirror....... The laser output is compressed in a spliced-on hollow-core PM photonic crystal fiber, thus providing direct end-of-the-fiber delivery of pulses of around 370 fs duration and 4 nJ energy with high mode quality. Tuning the pump power of the end amplifier of the laser allows for the control of output pulse...

  15. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.


    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance......Hz) the SSOA configuration can maintain a significantly higher bandwidth (~50% higher) compared to the MOPA architecture. Correspondingly narrower point spread functions can be generated in a Michelson interferometer....

  16. Monolithic integration of dual optical elements on high power semiconductor lasers (United States)

    Vaissie, Laurent

    This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform grating and a self-consistent model of the broad area active region. Improvement of the near-field intensity profile in good agreement with the FDTD model is demonstrated by varying the duty cycle from 20% to 55% and including the aspect ratio dependent etching (ARDE) for sub-micron features. The grating diffraction efficiency is estimated to be higher than 95% using a detailed analysis of the losses mechanisms of the device. The grating reflectivity is estimated to be as low as 2.10-4. The low reflectivity of the light extraction process is shown to increase the device efficiency and efficiently suppress lasing oscillations if both cleaved facets are replaced by grating couplers to produce 1.5W QCW with 11 nm bandwidth into a single spot a few mm above the device. Peak power in excess of 30W without visible COMD is achieved in this case. Having optimized, the light extraction process, we demonstrate the integration of three different optical functions on the substrate of the surface-emitting laser. First, a 40 level refractive microlens milled using focused ion beam shows a twofold reduction of the full-width half maximum 1mm above the device, showing potential for monolithic integration of coupling optics on the wafer. We then show that differential quantum efficiency of

  17. BRIEF COMMUNICATIONS: Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers (United States)

    Davydov, S. V.; Kulak, I. I.; Mit'kovets, A. I.; Stavrov, A. A.; Shkadarevich, A. P.; Yablonskiĭ, G. P.


    Lasing in crystals with narrow absorption bands was achieved for the first time by excitation with radiation emitted from electron-beam-pumped CdSxSe1-x semiconductor lasers. The lasing thresholds of YAG:Nd3+ and KGdW:Nd3+ crystals pumped with λ = 586 nm radiation were ~ 2 and ~ 1 mJ, respectively. The efficiency of conversion of the pump radiation into the output radiation in the KGdW:Nd3+ laser was 0.27%.

  18. Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Rapp, Ludovic, E-mail: [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Cibert, Christophe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nenon, Sebastien [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Alloncle, Anne Patricia [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nagel, Matthias [Empa, Swiss Federal Laboratories for Materials Testing and Reasearch, Laboratory for Functional Polymers, Uberlandstrasse 129, 8600 Duebendorf (Switzerland); Lippert, Thomas [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Videlot-Ackermann, Christine; Fages, Frederic [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Delaporte, Philippe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France)


    Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 {mu}s. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

  19. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri


    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.


    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM


    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  1. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)


    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  2. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser (United States)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.


    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  3. Tbits/s physical random bit generation based on mutually coupled semiconductor laser chaotic entropy source. (United States)

    Tang, Xi; Wu, Zheng-Mao; Wu, Jia-Gui; Deng, Tao; Chen, Jian-Jun; Fan, Li; Zhong, Zhu-Qiang; Xia, Guang-Qiong


    Using two mutually coupled semiconductor lasers (MC-SLs) outputs as chaotic entropy sources, a scheme for generating Tbits/s ultra-fast physical random bit (PRB) is demonstrated and analyzed experimentally. Firstly, two entropy sources originating from two chaotic outputs of MC-SLs are obtained in parallel. Secondly, by adopting multiple optimized post-processing methods, two PRB streams with the generation rate of 0.56 Tbits/s are extracted from the two entropy sources and their randomness are verified by using NIST Special Publication 800-22 statistical tests. Through merging the two sets of 0.56 Tbits/s PRB streams by an interleaving operation, a third set of 1.12 Tbits/s PRB stream, which meets all the quality criteria of NIST statistical tests, can be further acquired. Finally, after additionally taking into account the restriction of the min-entropy, the generation rate of two sets of PRB stream from the two entropy sources can still attain 0.48 Tbits/s, and then a third set of merging PRB stream is 0.96 Tbits/s. Moreover, for the sequence length of the order of 10 Gbits, the statistical bias and serial correlation coefficient of three sets of PRB streams are also analyzed.

  4. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L


    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  5. Quantifying complexity of the chaotic regime of a semiconductor laser subject to feedback via information theory measures (United States)

    Soriano, Miguel C.; Zunino, Luciano; Rosso, Osvaldo A.; Mirasso, Claudio R.


    The time evolution of the output of a semiconductor laser subject to optical feedback can exhibit high-dimensional chaotic fluctuations. In this contribution, our aim is to quantify the complexity of the chaotic time-trace generated by a semiconductor laser subject to delayed optical feedback. To that end, we discuss the properties of two recently introduced complexity measures based on information theory, namely the permutation entropy (PE) and the statistical complexity measure (SCM). The PE and SCM are defined as a functional of a symbolic probability distribution, evaluated using the Bandt-Pompe recipe to assign a probability distribution function to the time series generated by the chaotic system. In order to evaluate the performance of these novel complexity quantifiers, we compare them to a more standard chaos quantifier, namely the Kolmogorov-Sinai entropy. Here, we present numerical results showing that the statistical complexity and the permutation entropy, evaluated at the different time-scales involved in the chaotic regime of the laser subject to optical feedback, give valuable information about the complexity of the laser dynamics.

  6. [Application of "cold" laser (I.R. with semiconductors) as antalgic and anti-inflammatory therapy in osteo-articular and musculotendinous pathologies]. (United States)

    Petrachi, F; Matzuzzi, G


    The therapeutic efficacy of an I.R. laser appliance with semiconductors (GaAs) and a cooling device (cold laser) has been tried for osteo-articular ad muscle-tendinous painful pathologies. The result in almost all types of disorder has been satisfactory with diminution or disappearance of painful symptomatology and functional recovery.

  7. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices (United States)

    Horn, Kevin M [Albuquerque, NM


    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  8. A dual-loss-modulated intra-cavity frequency-doubled Q-switched and mode-locked Nd:Lu0.15Y0.85VO4/KTP green laser with a single-walled carbon nanotube saturable absorber and an acousto-optic modulator

    International Nuclear Information System (INIS)

    Zhang, Gang; Zhao, Shengzhi; Yang, Kejian; Li, Guiqiu; Li, Dechun; Cheng, Kang; Han, Chao; Zhao, Bin; Wang, Yonggang


    By using both a single-walled carbon nanotube saturable absorber (SWCNT-SA) and an acousto-optic (AO) modulator, a dual-loss-modulated intra-cavity frequency-doubled Q-switched and mode-locked (QML) Nd:Lu 0.15 Y 0.85 VO 4 /KTP (KTiOPO 4 ) green laser was demonstrated for the first time. The QML green laser characteristics such as the pulse width and single-pulse energy have been measured for different modulation frequencies of the AO modulator (f p ). In particular, in comparison with the solely passively QML green laser with an SWCNT-SA, the dual-loss-modulated QML green laser can generate a more stable pulse train, a shorter pulse width of the Q-switched envelope, a greater pulse energy and a higher average peak power. For the dual-loss-modulated QML green laser, at a pump power of 7.9 W and a repetition rate of 10 kHz, the pulse width and the pulse energy of the Q-switch envelope and the average peak power of the QML green laser are 50 ns, 20.34 µJ and 15.5 kW, respectively, corresponding to a pulse width compression of 77%, a pulse energy improvement factor of six times and a QML peak power increase factor of 16 times when compared with those for the solely passively QML green laser. The experimental results show that the dual-loss modulation is an efficient method for the generation of a stable QML green laser with an SWCNT-SA

  9. Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers (United States)

    Zeng, Linfei

    This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or

  10. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten


    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  11. Applications of confocal laser scanning microscopy in research into organic semiconductor thin films

    DEFF Research Database (Denmark)

    Schiek, Manuela; Balzer, Frank


    At the center of opto-electronic devices are thin layers of organic semiconductors, which need to be sandwiched between planar electrodes. With the growing demand for opto-electronic devices now and in the future, new electrode materials are needed to meet the requirements of organic semiconductors...

  12. Differential-phase-shift quantum key distribution experiment using fast physical random bit generator with chaotic semiconductor lasers. (United States)

    Honjo, Toshimori; Uchida, Atsushi; Amano, Kazuya; Hirano, Kunihito; Someya, Hiroyuki; Okumura, Haruka; Yoshimura, Kazuyuki; Davis, Peter; Tokura, Yasuhiro


    A high speed physical random bit generator is applied for the first time to a gigahertz clocked quantum key distribution system. Random phase-modulation in a differential-phase-shift quantum key distribution (DPS-QKD) system is performed using a 1-Gbps random bit signal which is generated by a physical random bit generator with chaotic semiconductor lasers. Stable operation is demonstrated for over one hour, and sifted keys are successfully generated at a rate of 9.0 kbps with a quantum bit error rate of 3.2% after 25-km fiber transmission.

  13. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.


    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  14. Mid-infrared mode-locked pulse generation with multilayer black phosphorus as saturable absorber. (United States)

    Qin, Zhipeng; Xie, Guoqiang; Zhao, Chujun; Wen, Shuangchun; Yuan, Peng; Qian, Liejia


    A mid-infrared saturable absorber mirror is successfully fabricated by transferring the mechanically exfoliated black phosphorus onto the gold-coated mirror. With the as-prepared black phosphorus saturable absorber mirror, a continuous-wave passively mode-locked Er:ZBLAN fiber laser is demonstrated at the wavelength of 2.8 μm, which delivers a maximum average output power of 613 mW, a repetition rate of 24 MHz, and a pulse duration of 42 ps. To the best of our knowledge, this is the first time a black phosphorus mode-locked laser at 2.8 μm wavelength has been demonstrated. Our results demonstrate the feasibility of black phosphorus flake as a new two-dimensional material for application in mid-infrared ultrafast photonics.

  15. A Novel Laser Technology for Nanostructure Formation in Elementary Semiconductors: Quantum Confinement Effect


    Medvids, A; Onufrijevs, P; Dmitruk, M; Dmitruk, I; Pundyk, I


    Nowadays, nanostructures are one of the most investigated objects in solid-state physics, especially Quantum confinement effect in quantum dots, quantum wires and quantum wells. In the case of nanosize structures the energy band diagram of semiconductor has strongly changed. This leads to a crucial change of semiconductor properties such as: electrical (due to the change of free charge carrier concentration and electrons’ and holes’ mobility); optical (absorption coefficient, reflectivity in...

  16. The dynamics of the laser-induced metal-semiconductor phase transition of samarium sulfide (SmS)

    International Nuclear Information System (INIS)

    Kaempfer, Tino


    The present thesis is dedicated to the experimental study of the metal-semiconductor phase transition of samarium sulfide (SmS): Temperature- and time-resolved experiments on the characterization of the phase transition of mixed-valence SmS samples (M-SmS) are presented. The measurement of the dynamics of the laser-induced phase transition pursues via time-resolved ultrashort-time microscopy and by X-ray diffraction with sub-picosecond time resolution. The electronic and structural processes, which follow an excitation of M-SmS with infrared femtosecond laser pulses, are physically interpreted on the base of the results obtained in this thesis and model imaginations. [de

  17. Estimation of entropy rate in a fast physical random-bit generator using a chaotic semiconductor laser with intrinsic noise. (United States)

    Mikami, Takuya; Kanno, Kazutaka; Aoyama, Kota; Uchida, Atsushi; Ikeguchi, Tohru; Harayama, Takahisa; Sunada, Satoshi; Arai, Ken-ichi; Yoshimura, Kazuyuki; Davis, Peter


    We analyze the time for growth of bit entropy when generating nondeterministic bits using a chaotic semiconductor laser model. The mechanism for generating nondeterministic bits is modeled as a 1-bit sampling of the intensity of light output. Microscopic noise results in an ensemble of trajectories whose bit entropy increases with time. The time for the growth of bit entropy, called the memory time, depends on both noise strength and laser dynamics. It is shown that the average memory time decreases logarithmically with increase in noise strength. It is argued that the ratio of change in average memory time with change in logarithm of noise strength can be used to estimate the intrinsic dynamical entropy rate for this method of random bit generation. It is also shown that in this model the entropy rate corresponds to the maximum Lyapunov exponent.

  18. Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

    International Nuclear Information System (INIS)

    Abrarov, S.M.


    In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

  19. Generation of ultrashort pulses from chromium doped cunyite laser (United States)

    Jeanty, Michelet

    This thesis focuses on the generation of ultra short pulses from the chromium-doped Cunyite laser. The various principles and operation of Cunyite laser systems capable of generating femtosecond pulses in the near infrared are described. Self-starting mode-locking was successfully engineered and implemented with the assistance of semiconductor absorber mirrors (SESAMs). The broad tunability of Cr4+: Ca2GeO4 laser indicates its potential as a source of ultrafast light generation. The spectral range between 1.3 mum and 1.5mum is both important for optical communications and the eye-safe 1.45mum wavelength range. If the entire laser bandwidth of Cr4+: Ca2GeO4 are utilized, pulses as short as sub-20 fs of Cr4+: Ca2GeO 4 may be attainable. Cr4+: Ca2GeO4 laser (Cunyite) is developed at the Institute for Ultra-fast Spectroscopy and Lasers of City College of New York.The setup is formed by a standard confocal X-shaped cavity composed of the active material in the focus, and a broadband output coupler in combination with several flat mirrors used for dispersion compensation. So far, a semiconductor saturable absorber mirror (SESAM) is necessary to sustain mode-locking. Early attempts to generate mode-locked pulses led to the generation of full width at half maximum 60 picosecond pulses using an intracavity quantum-well-based semiconductor saturable absorber mirror. The SESAM is made of a thin narrow band gap absorption region, which is sandwiched between a cap layer and a spacer layer placed on the top of a high reflectivity semiconductor saturable absorber mirror. The SESAM is prepared by stacking pairs of quarter-wavelength layers that are composed of semiconductors with alternating high and low refractive indices. It consists of 24.5 periods of 123-nm AlAs low-index-104.9nm GaAs high-index quarter-wave layers for 1.43mum. The pulse width was further reduced to 8.6ps and subsequently to 365fs by using a highly-doped crystal. The tuning range of the mode-locked Cunyite

  20. A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers (United States)

    Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun


    In this paper, a novel image encryption algorithm based on synchronization of physical random bit generated in a cascade-coupled semiconductor ring lasers (CCSRL) system is proposed, and the security analysis is performed. In both transmitter and receiver parts, the CCSRL system is a master-slave configuration consisting of a master semiconductor ring laser (M-SRL) with cross-feedback and a solitary SRL (S-SRL). The proposed image encryption algorithm includes image preprocessing based on conventional chaotic maps, pixel confusion based on control matrix extracted from physical random bit, and pixel diffusion based on random bit stream extracted from physical random bit. Firstly, the preprocessing method is used to eliminate the correlation between adjacent pixels. Secondly, physical random bit with verified randomness is generated based on chaos in the CCSRL system, and is used to simultaneously generate the control matrix and random bit stream. Finally, the control matrix and random bit stream are used for the encryption algorithm in order to change the position and the values of pixels, respectively. Simulation results and security analysis demonstrate that the proposed algorithm is effective and able to resist various typical attacks, and thus is an excellent candidate for secure image communication application.

  1. Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns Project (United States)

    National Aeronautics and Space Administration — While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources...

  2. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.


    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  3. Effects of a low-level semiconductor gallium arsenide laser on local pathological alterations induced by Bothrops moojeni snake venom. (United States)

    Aranha de Sousa, Elziliam; Bittencourt, José Adolfo Homobono Machado; Seabra de Oliveira, Nayana Keyla; Correia Henriques, Shayanne Vanessa; dos Santos Picanço, Leide Caroline; Lobato, Camila Pena; Ribeiro, José Renato; Pereira, Washington Luiz Assunção; Carvalho, José Carlos Tavares; da Silva, Jocivânia Oliveira


    Antivenom therapy has been ineffective in neutralizing the tissue damage caused by snakebites. Among therapeutic strategies to minimize effects after envenoming, it was hypothesized that a low level laser would reduce complications and reduce the severity of local snake venom effects. In the current study, the effect of a low-level semiconductor gallium arsenide (GaAs) laser on the local pathological alterations induced by B. moojeni snake venom was investigated. The experimental groups consisted of five male mice, each administered either B. moojeni venom (VB), B. moojeni venom + antivenom (VAV), B. moojeni venom + laser (VL), B. moojeni venom + antivenom + laser (VAVL), or sterile saline solution (SSS) alone. Paw oedema was induced by intradermal administration of 0.05 mg kg(-1) of B. moojeni venom and was expressed in mm of directly induced oedema. Mice received by subcutaneous route 0.20 mg kg(-1) of venom for evaluating nociceptive activity and the time (in seconds) spent in licking and biting the injected paw was taken as an indicator of pain response. Inflammatory infiltration was determined by counting the number of leukocytes present in the gastrocnemius muscle after venom injection (0.10 mg kg(-1)). For histological examination of myonecrosis, venom (0.10 mg kg(-1)) was administered intramuscularly. The site of venom injection was irradiated by the GaAs laser and some animals received antivenom intraperitoneally. The results indicated that GaAs laser irradiation can help in reducing some local effects produced by the B. moojeni venom in mice, stimulating phagocytosis, proliferation of myoblasts and the regeneration of muscle fibers.

  4. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    CERN Document Server

    Epperlein, Peter W


    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  5. Intracavity coherent interaction of mode-locked pulse train with resonant medium (United States)

    Masuda, Koji

    Resonant interactions of a mode-locked pulse train with intracavity samples, namely rubidium-87 (Rb-87) vapor and Fabry-Perot etalon, placed inside a laser cavity are studied in the light of developing ultra-sensitive laser sensors to measure a small magnetic field and a minute change of index of refraction of a sample material, respectively. A Rb-87 vapor provides an opportunity for a compact high-sensitivity atomic magnetometer due to its accessibility by the standard laser sources and to the large ensemble magnetization. By employing the ultra-sensitive interferometric technique utilizing the intracavity properties of a mode-locked laser, the performance of the Rb-87 magnetometer can be further improved. The fundamental properties of coherent interaction between a mode-locked pulse train and a Rb-87 vapor are studied in numerical calculations of 33 density matrix equations and the reduced wave equation, which are then examined in experiments. In particular, a coherent dark-state is created by the pulse train and is further enhanced by means of spectral shaping or polarization modulation of the excitation pulse train. Experiments performed inside a laser cavity show that the atomic coherence is still preserved due to the coherent nature of interaction between the Rb-87 vapor and the ultrashort pulses occurred within a short time scale compared to the atomic relaxation times, which results in nonlinear propagation of the pulses as well as an observation of the dark-line resonance inside the laser cavity. A Fabry-Perot etalon is a type of optical cavity and serves as a tuning element of the frequency of cw-lasers. By inserting a Fabry-Perot etalon inside a mode-locked laser, the cavity resonance modes are modied due to a coupling between the two cavities, which leads to unique temporal and spectral characteristics of the resultant pulse train and its frequency comb. Both the temporal and spectral properties of the pulse train are studied in detail in experiments as

  6. Fiber transmission and generation of ultrawideband pulses by direct current modulation of semi-conductor lasers and chirp-to-intensity conversion

    DEFF Research Database (Denmark)

    Company Torres, Victor; Prince, Kamau; Tafur Monroy, Idelfonso


    Optical pulses generated by current modulation of semiconductor lasers are strongly frequency chirped. This effect has been considered pernicious for optical communications. We take advantage of this effect for the generation of ultrawideband microwave signals by using an optical filter to achieve...

  7. Conductors, semiconductors and insulators irradiated with short-wavelength free-electron laser

    Czech Academy of Sciences Publication Activity Database

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, Libor; Bittner, Michal; Létal, V.; Vorlíček, Vladimír; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E.; Schneidmiller, E.A.; Treusch, R.; Yurkov, M. V.


    Roč. 101, č. 4 (2007), 043107/1-043107/4 ISSN 0021-8979 R&D Projects: GA MŠk 1P04LA235; GA MŠk LC510; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : free-electron laser * extreme ultraviolet * ablation * laser-matter interaction Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.171, year: 2007

  8. Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtoseond and Picosecond Laser Techniques. (United States)


    High Density Electron-Hole Plasma in Ga0.5 n0.5P under High Power Picosecond Laser Pulse Excitation, H. Zarrabi and R. R. Alfano, SPIE (1983) (in press...Ga0 .5 In0 .5P, H. Zarrabi and R. R. Alfano Proceedings of Society of Photo-optical Engineers, San Diego, Ca., August 24, 1983. 9. Tunable Laser

  9. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb; Yariv


    A GaA1As semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. Also reported similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  10. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb, M.; Yariv, A.


    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  11. Self-induced frequency scanning and distributed bragg reflection in semiconductor lasers with phase-conjugate feedback (United States)

    Cronin-Golomb, Mark; Yariv, Amnon


    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  12. Compact, Low-Cost, Frequency-Locked Semiconductor Laser for Injection Seeding High Power Laser, Phase II (United States)

    National Aeronautics and Space Administration — This NASA Small Business Innovative Research Phase II project will develop a compact, low-cost, wavelength locked seed laser for injection locking high powered...

  13. Measurement of laser activated electron tunneling from semiconductor zinc oxide to adsorbed organic molecules by a matrix assisted laser desorption ionization mass spectrometer

    International Nuclear Information System (INIS)

    Zhong Hongying; Fu Jieying; Wang Xiaoli; Zheng Shi


    Highlights: ► Irradiation of photons with energies more than the band gap generates electron–hole pairs. ► Electron tunneling probability is dependent on the electron mobility. ► Tunneling electrons are captured by charge deficient atoms. ► Unpaired electrons induce cleavages of chemical bonds. - Abstract: Measurement of light induced heterogeneous electron transfer is important for understanding of fundamental processes involved in chemistry, physics and biology, which is still challenging by current techniques. Laser activated electron tunneling (LAET) from semiconductor metal oxides was observed and characterized by a MALDI (matrix assisted laser desorption ionization) mass spectrometer in this work. Nanoparticles of ZnO were placed on a MALDI sample plate. Free fatty acids and derivatives were used as models of organic compounds and directly deposited on the surface of ZnO nanoparticles. Irradiation of UV laser (λ = 355 nm) with energy more than the band gap of ZnO produces ions that can be detected in negative mode. When TiO 2 nanoparticles with similar band gap but much lower electron mobility were used, these ions were not observed unless the voltage on the sample plate was increased. The experimental results indicate that laser induced electron tunneling is dependent on the electron mobility and the strength of the electric field. Capture of low energy electrons by charge-deficient atoms of adsorbed organic molecules causes unpaired electron-directed cleavages of chemical bonds in a nonergodic pathway. In positive detection mode, electron tunneling cannot be observed due to the reverse moving direction of electrons. It should be able to expect that laser desorption ionization mass spectrometry is a new technique capable of probing the dynamics of electron tunneling. LAET offers advantages as a new ionization dissociation method for mass spectrometry.

  14. Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers. (United States)

    Hintikka, Mikko; Hallman, Lauri; Kostamovaara, Juha


    Timing walk error in pulsed time-of-flight based laser range finding was studied using two different types of laser diode drivers. The study compares avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor switch based laser pulse drivers, both producing 1.35 ns current pulse length (full width at half maximum), and investigates how the slowly rising part of the current pulse of the avalanche BJT based driver affects the leading edge timing walk. The walk error was measured to be very similar with both drivers within an input signal dynamic range of 1:10 000 (receiver bandwidth of 700 MHz) but increased rapidly with the avalanche BJT based driver at higher values of dynamic range. The slowly rising part does not exist in the current pulse produced by the metal-oxide-semiconductor (MOS) based laser driver, and thus the MOS based driver can be utilized in a wider dynamic range.

  15. Packaging-induced failure of semiconductor lasers and optical telecommunications components

    Energy Technology Data Exchange (ETDEWEB)

    Sharps, J.A. [Corning Inc., NY (United States)


    Telecommunications equipment for field deployment generally have specified lifetimes of > 100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, the authors found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. They refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with high intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. The authors have found PIF is averted by packaging with free O{sub 2} and/or a getter material that sequesters organics.

  16. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.


    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  17. Experimental study of self-oscillation frequency in a semiconductor laser with optical injection

    International Nuclear Information System (INIS)

    MartInez-Zerega, B E; Jaimes-Reategui, R; Pisarchik, A N; Liu, J M


    Period-one and period-two oscillations in a diode laser subject to optical injection are experimentally investigated. The changes in the modulation frequency are studied as a function of the detuning frequency and the injection signal strength

  18. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers (United States)


    This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser. PMID:25147848

  19. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Moustafa Ahmed


    Full Text Available This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN. We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  20. Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity (United States)


    virtually the case for the DPCM . It shows the greatest potential for laser phasing, of any geometry. In that device, two independent pump beams are... DPCM in that respect, except that only a single pump beam is used. Thus its study falls under the self-imposed guidelines of applicability for laser...PPCM, as in its cousin the DPCM , the beams are constrained so that only a single grating is written. Consequently, the reflection intensity is stable [61

  1. Dynamic and Noise Properties of Tunable Multielectrode Semiconductor Lasers Including Spatial Hole Burning and Nonlinear Gain (United States)


    LASERS WITH UNIFORM INTENSITY :or instance, an increase in electron population due to DISTRIBUTION ýurrent modulation leads to an increase in the output...lasers 1281, the o the spontaneous emission results in a decrease of clcc- field intensity distribution is nearly uniform inside the :on population to...Optics (Academic. 1989). on optical fiber measuremcnts at the Guilin Insti- Dr. Agrawal is a fellow of the Optical Society of America and a member utuc

  2. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    Energy Technology Data Exchange (ETDEWEB)

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.


    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  3. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo


    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  4. Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses (United States)

    Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.


    The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

  5. Short-pulse generation in a diode-end-pumped solid-state laser

    CSIR Research Space (South Africa)

    Ngcobo, S


    Full Text Available A Nd: YVO4 modelocked laser has been constructed using a resonator designed according to the theoretical parameters. The laser produced pulses in the picosecond region with a maximum average output power of 2.8W. Passive modelocking of the Nd: YVO4...

  6. Size effect caused significant reduction of thermal conductivity of GaAs/AlAs distributed Bragg reflector used in semiconductor disk laser (United States)

    Zhang, Peng; Zhu, Renjiang; Jiang, Maohua; Song, Yanrong; Zhang, Dingke; Cui, Yuting


    Thermal properties of the distributed Bragg reflector (DBR) used in the semiconductor gain element are crucial for the performance of a semiconductor disk laser (SDL). For the purpose of more reasonable semiconductor wafer design, so as to improve the thermal management of SDLs, accurate thermal conductivity value of a DBR is under considerable requirement. By the use of equilibrium molecular dynamics method, thermal conductivities of GaAs/AlAs DBRs, which are widely employed in 1 μm waveband SDLs, are calculated, and simulated results are compared with the reported experimental data. Influences of the layer thickness on the thermal conductivities of the DBR structure and the effects of Al composition on the AlxGa1-xAs ternary alloy values are focused and analyzed.

  7. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh


    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  8. Semiconductors Investigated by Time Resolved Spectroscopy Using Femtosecond and Picosecond Laser Technology. (United States)


    Measured by a Streak Camera, H. Zarrabi , R. R. Alfano, Phys. Rev. B32, 3947 (1985). Picosecond Pulses Produced by Mode Locking an Nd:Glass Laser with Kodak...Excitation" by Hassan J. Zarrabi , 1985, AFOSR General Optronics 3. "Picosecond and Steady State Spectroscopy of Defects in Semi-Insulating CdSe" by David L

  9. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao


    -wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  10. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

    DEFF Research Database (Denmark)

    Ziegler, Mathias; Hempel, Martin; Larsen, Henning Engelbrecht


    The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns...

  11. Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Ziaja, B.


    Roč. 6, č. 9 (2016), 1-12, č. článku 238. ISSN 2076-3417 Institutional support: RVO:68378271 Keywords : free-electron lasers * transient optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.679, year: 2016

  12. All-fiber passively mode-locked thulium-doped fiber ring oscillator operated at solitary and noiselike modes. (United States)

    Wang, Q; Chen, T; Zhang, B; Heberle, A P; Chen, K P


    This Letter presents an all-fiber mode-locked thulium-doped fiber ring oscillator based on nonlinear polarization evolution (NPE). Pumped by an erbium-doped fiber amplified spontaneous emission source, the construction of the laser cavity consisting of only fiber optic components can operate under two different regimes of solitary and noiselike (NL) pulses. Autocorrelation measurements are performed to extract features of these two regimes. © 2011 Optical Society of America

  13. Generalized bipolariton model. propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons

    International Nuclear Information System (INIS)

    Igor Beloussov


    A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons. (author)


    Directory of Open Access Journals (Sweden)

    V. L. Kozlov


    Full Text Available Construction techniques of precision measuring instruments of optical characteristics on the basis of two-wave lasers with use of basic and nephelometer methods are presented. System stability to changes of hardware constants, influence of an environment, pollution of optics is shown. The system automatically takes into account changes of a controllable line length that expands functionalities of a measuring instrument. 

  15. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Posilović, K. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)


    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  16. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    International Nuclear Information System (INIS)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D.; Posilović, K.; Pohl, J.; Weyers, M.


    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm −2  sr −1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  17. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F


    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  18. Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities. (United States)

    Zhu, X; Cassidy, D T


    A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

  19. Laser isotope purification of lead for use in semiconductor chip interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Scheibner, K.; Haynam, C.; Worden, E.; Esser, B.


    Lead, used throughout the electronics industries, typically contains small amounts of radioactive {sup 210}Pb (a daughter product of the planets ubiquitous {sup 238}U) whose {sup 210}Po daughter emits an {alpha}-particle that is known to cause soft errors in electronic circuits. The {sup 210}Pb is not separable by chemical means. This paper describes the generic Atomic Vapor Laser Isotope Separation (AVLIS) process developed at the Lawrence Livermore National Laboratory (LLNL) over the last 20 years, with particular emphasis on recent efforts to develop the process physics and component technologies required to remove the offending {sup 210}Pb using lasers. We have constructed a developmental facility that includes a process laser development area and a test bed for the vaporizer and ion and product collectors. We will be testing much of the equipment and demonstrating pilot scale AVLIS on a surrogate material later this year. Detection of the very low alpha emission even from commercially available low-alpha lead is challenging. LLNL`s detection capabilities will be described. The goal of the development of lead purification technology is to demonstrate the capability in FY97, and to deploy a production machine capable of up to several MT/y of isotopically purified material, possible beginning in FY98.

  20. Influence of parameters of gas medium on the fluorescence of iodine molecules 129I2, 127I129I and 127I2 excited by semiconductor laser radiation (United States)

    Kireev, S. V.; Shnyrev, S. L.


    Calculated and experimental results of studies of the influence of vapor temperature of iodine molecules (129I2, 127I129I, and 127I2) and pressure of the analyzed medium on the intensity of fluorescence of the molecules excited by semiconductor laser radiation in the red spectrum region are reported. It is demonstrated that depending on the wavelength of laser radiation there exist different ranges of temperatures and pressure values at which the fluorescence intensities of each of the indicated iodine molecules reach their maximum values.

  1. Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Fritz, I.J.; Klem, J.F.; Hafich, M.J. [and others


    This report summarizes research completed under a Laboratory Directed Research and Development program funded for part of FY94, FY95 and FY96. The main goals were (1) to develop novel, compound-semiconductor based optical sources to enable field-based detection of environmentally important chemical species using miniaturized, low-power, rugged, moderate cost spectroscopic equipment, and (2) to demonstrate the utility of near-infrared spectroscopy to quantitatively measure contaminants. Potential applications would include monitoring process and effluent streams for volatile organic compound detection and sensing head-space gasses in storage vessels for waste management. Sensing is based on absorption in the 1.3-1.9 {mu}m band from overtones of the C-H, N-H and O-H stretch resonances. We describe work in developing novel broadband light-emitting diodes emitting over the entire 1.4-1.9 {mu}m wavelength range, first using InGaAs quantum wells, and second using a novel technique for growing digital-alloy materials in the InAlGaAs material system. Next we demonstrate the utility of near-infrared spectroscopy for quantitatively determining contamination of soil by motor oil. Finally we discuss the separability of different classes of organic compounds using near-infrared spectroscopic techniques.

  2. Photonic microwave carrier recovery using period-one nonlinear dynamics of semiconductor lasers for OFDM-RoF coherent detection. (United States)

    Hung, Yu-Han; Yan, Jhih-Heng; Feng, Kai-Ming; Hwang, Sheng-Kwang


    This study investigates an all-optical scheme based on period-one (P1) nonlinear dynamics of semiconductor lasers, which regenerates the microwave carrier of an orthogonal frequency division multiplexing radio-over-fiber (OFDM-RoF) signal and uses it as a microwave local oscillator for coherent detection. Through the injection locking established between the OFDM-RoF signal and the P1 dynamics, frequency synchronization with highly preserved phase quality is inherently achieved between the recovered microwave carrier and the microwave carrier of the OFDM-RoF signal. A bit-error ratio down to 1.9×10-9 is achieved accordingly using the proposed scheme for coherent detection of a 32-GHz OFDM-RoF signal carrying 4  Gb/s 16-quadrature amplitude modulation data. No electronic microwave generators or electronic phase-locked loops are thus required. The proposed system can be operated up to at least 100 GHz and can be self-adapted to certain changes in the operating microwave frequency.

  3. Short-range remote spectral sensor using mid-infrared semiconductor lasers with orthogonal code-division multiplexing approach (United States)

    Morbi, Zulfikar; Ho, D. B.; Ren, H.-W.; Le, Han Q.; Pei, Shin Shem


    Demonstration of short-range multispectral remote sensing, using 3 to 4-micrometers mid- infrared Sb semiconductor lasers based on code-division multiplexing (CDM) architecture, is described. The system is built on a principle similar to intensity- modulated/direct-detection optical-CDMA for communications, but adapted for sensing with synchronous, orthogonal codes to distinguish different wavelength channels with zero interchannel correlation. The concept is scalable for any number of channels, and experiments with a two-wavelength system are conducted. The CDM-signal processing yielded a white-Gaussian-like system noise that is found to be near the theoretical level limited by the detector fundamental intrinsic noise. With sub-mW transmitter average power, the system was able to detect an open-air acetylene gas leak of 10-2 STP ft3/hr from 10-m away with time-varying, random, noncooperative backscatters. A similar experiment detected and positively distinguished hydrocarbon oil contaminants on water from bio-organic oils and detergents. Projection for more advanced systems suggests a multi-kilometer-range capability for watt-level transmitters, and hundreds of wavelength channels can also be accommodated for active hyperspectral remote sensing application.

  4. Tb/s physical random bit generation with bandwidth-enhanced chaos in three-cascaded semiconductor lasers. (United States)

    Sakuraba, Ryohsuke; Iwakawa, Kento; Kanno, Kazutaka; Uchida, Atsushi


    We experimentally demonstrate fast physical random bit generation from bandwidth-enhanced chaos by using three-cascaded semiconductor lasers. The bandwidth-enhanced chaos is obtained with the standard bandwidth of 35.2 GHz, the effective bandwidth of 26.0 GHz and the flatness of 5.6 dB, whose waveform is used for random bit generation. Two schemes of single-bit and multi-bit extraction methods for random bit generation are carried out to evaluate the entropy rate and the maximum random bit generation rate. For single-bit generation, the generation rate at 20 Gb/s is obtained for physical random bit sequences. For multi-bit generation, the maximum generation rate at 1.2 Tb/s ( = 100 GS/s × 6 bits × 2 data) is equivalently achieved for physical random bit sequences whose randomness is verified by using both NIST Special Publication 800-22 and TestU01.

  5. Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition (United States)

    Wang, Cih-Su; Liau, Chi-Shung; Sun, Tzu-Ming; Chen, Yu-Chia; Lin, Tai-Yuan; Chen, Yang-Fang


    A new approach is proposed to light up band-edge stimulated emission arising from a semiconductor with dipole-forbidden band-gap transition. To illustrate our working principle, here we demonstrate the feasibility on the composite of SnO2 nanowires (NWs) and chicken albumen. SnO2 NWs, which merely emit visible defect emission, are observed to generate a strong ultraviolet fluorescence centered at 387 nm assisted by chicken albumen at room temperature. In addition, a stunning laser action is further discovered in the albumen/SnO2 NWs composite system. The underlying mechanism is interpreted in terms of the fluorescence resonance energy transfer (FRET) from the chicken albumen protein to SnO2 NWs. More importantly, the giant oscillator strength of shallow defect states, which is served orders of magnitude larger than that of the free exciton, plays a decisive role. Our approach therefore shows that bio-materials exhibit a great potential in applications for novel light emitters, which may open up a new avenue for the development of bio-inspired optoelectronic devices. PMID:25758749

  6. International Semiconductor Laser Conference. Held in Boston, Massachusetts on August 29 - September 1, 1988 (United States)


    Meehan, W. Stutius, J.E. Williams, and J.H. Zarrabi , Polaroid Corporation, Cambridge, MA, USA ....... .... 156-157 L:6 3.15 pm High-Power Non-Planar... Zarrabi Microelectronics Laboratory, Polaroid Corporation, Cambridge, MA 02139 High power GaAs/GaAIAs diode lasers are finding an increasing number of...C. p. 184-185 Zarrabi , J. H. p. 156-157 Pooladdej, J. p. 48-49 Stephens, R. R. p. 28-29 Vahala, K. J. p. 186-187 Zehr, S. W p. 48-49 Portnoy, E. L.p

  7. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    Czech Academy of Sciences Publication Activity Database

    Levy, Yoann; Derrien, Thibault; Bulgakova, Nadezhda M.; Gurevich, E.L.; Mocek, Tomáš


    Roč. 374, Jun (2016), s. 157-164 ISSN 0169-4332 R&D Projects: GA MŠk ED2.1.00/01.0027 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : LIPSS * modulated temperature relaxation * two-temperature model * nano-melting Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.387, year: 2016

  8. Semiconductor detectors for observation of multi-MeV protons and ions produced by lasers

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Klir, D.; De Marco, Massimo; Cikhardt, J.; Velyhan, Andriy; Řezáč, Karel; Pfeifer, Miroslav; Krouský, Eduard; Ryć, L.; Dostál, Jan; Kaufman, Jan; Ullschmied, Jiří; Limpouch, J.


    Roč. 3, č. 1 (2016), 9-11 ISSN 2336-2626 R&D Projects: GA ČR GA16-07036S; GA MŠk EF15_008/0000162; GA MŠk(CZ) LD14089 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-accelerated ions * ion collectors * SiC detectors * similarity relations * electromagnetic pulse Subject RIV: BL - Plasma and Gas Discharge Physics

  9. Generation of 103 fs mode-locked pulses by a gain linewidth-variable Nd,Y:CaF2 disordered crystal. (United States)

    Qin, Z P; Xie, G Q; Ma, J; Ge, W Y; Yuan, P; Qian, L J; Su, L B; Jiang, D P; Ma, F K; Zhang, Q; Cao, Y X; Xu, J


    We have demonstrated a diode-pumped passively mode-locked femtosecond Nd,Y:CaF2 disordered crystal laser for the first time to our knowledge. By choosing appropriate Y-doping concentration, a broad fluorescence linewidth of 31 nm has been obtained from the gain linewidth-variable Nd,Y:CaF2 crystal. With the Nd,Y:CaF2 disordered crystal as gain medium, the mode-locked laser generated pulses with pulse duration as short as 103 fs, average output power of 89 mW, and repetition rate of 100 MHz. To our best knowledge, this is the shortest pulse generated from Nd-doped crystal lasers so far. The research results show that the Nd,Y:CaF2 disordered crystal will be a potential alternative as gain medium of repetitive chirped pulse amplification for high-peak-power lasers.

  10. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography. (United States)

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul


    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  11. 640-Gbit/s fast physical random number generation using a broadband chaotic semiconductor laser (United States)

    Zhang, Limeng; Pan, Biwei; Chen, Guangcan; Guo, Lu; Lu, Dan; Zhao, Lingjuan; Wang, Wei


    An ultra-fast physical random number generator is demonstrated utilizing a photonic integrated device based broadband chaotic source with a simple post data processing method. The compact chaotic source is implemented by using a monolithic integrated dual-mode amplified feedback laser (AFL) with self-injection, where a robust chaotic signal with RF frequency coverage of above 50 GHz and flatness of ±3.6 dB is generated. By using 4-least significant bits (LSBs) retaining from the 8-bit digitization of the chaotic waveform, random sequences with a bit-rate up to 640 Gbit/s (160 GS/s × 4 bits) are realized. The generated random bits have passed each of the fifteen NIST statistics tests (NIST SP800-22), indicating its randomness for practical applications.

  12. Accurate absolute frequencies of the ν1+ν3 band of 13C2H2 determined using an infrared mode-locked Cr:YAG laser frequency comb

    International Nuclear Information System (INIS)

    Madej, Alan A.; Bernard, John E.; John Alcock, A.; Czajkowski, Andrzej; Chepurov, Sergei


    Absolute frequency measurements, with up to 1x10 -11 level accuracies, are presented for 60 lines of the P and R branches for the ν 1 +ν 3 band of 13 C 2 H 2 at 1.5 μm (194 THz). The measurements were made using cavity-enhanced, diode-laser-based saturation spectroscopy. With one laser system stabilized to the P(16) line and a second laser system stabilized to the line whose frequency was to be determined, a Cr:YAG frequency comb was employed to accurately measure the tetrahertz level frequency intervals. The results are compared with recent work from other groups and indicate that these lines would form a basis for a high-quality atlas of reference frequencies for this region of the spectrum

  13. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum. (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud


    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  14. Ultra-short pulse generation in a linear femtosecond fiber laser using a Faraday rotator mirror and semiconductor saturable absorber mirror (United States)

    Hekmat, M. J.; Gholami, A.; Omoomi, M.; Abdollahi, M.; Bagheri, A.; Normohammadi, H.; Kanani, M.; Ebrahimi, A.


    An innovative method for obtaining ultra-short and perfectly stable femtosecond pulses in a linear erbium-doped fiber laser is proposed. A commercial semiconductor saturable absorber mirror and a standard Faraday rotator are used in both sides of the linear fiber optic laser configuration to shorten the pulse duration and suppress undesirable effects on the polarization state. The laser operation is investigated theoretically using a physical model and it is verified using experimental results. The main idea of this research is to apply a Faraday rotator mirror for pulse shortening purposes. For this reason, two types of Er-doped fiber optics with different group velocity dispersion parameters are used to achieve the optimum net group velocity dispersion in the cavity. Output results demonstrate good consistency between theory and experimental results. The output power of the linear oscillator is approximately 45 mW with 135 fs pulses at the 23.5 MHz repetition rate without any pulse compression.

  15. Photobiostimulation effects on germination and early growth of wheat seeds (Triticum aestivum L) produced by a semiconductor laser with λ=980nm

    International Nuclear Information System (INIS)

    Michtchenko, A.; Hernandez, M.


    The effect of the exposure of wheat (Triticum aestivum L) seeds to a IR laser radiation with λ=980nm produced by a semiconductor laser on germination and early growth had been studied under laboratory conditions. Seeds were irradiated to one of two laser intensities 15 mWcm - ''2 or 30 mWcm -2 for different periods of time 30, 60 or 120 s. Seeds exposed to a light intensity of 15mWcm -2 and an exposition time of 30 s. showed an increase on the percentage of seeds germinated normally while the percentage of seeds germinated abnormally decreased. At the same time there is a stimulation effect on the growth of the stem and on the growth of the root of 10% on wheat seedlings over control seedlings. Significant differences (ρ < 0.001) were observed between the control and the above treatment. (Author)

  16. Record Pulsed Power Demonstration of a 2 micron GaSb-Based Optically Pumped Semiconductor Laser Grown Lattice-Mismatched on an AlAs/GaAs Bragg Mirror and Substrate (Postprint) (United States)


    when pumped with a pulsed 1064 nm neodymium doped yttrium aluminum garnet laser. 15. SUBJECT TERMS lasers, semiconductor 16. SECURITY...pulsed 1064 nm neodymium doped yttrium aluminum garnet laser. © 2009 American Institute of Physics. DOI: 10.1063/1.3212891 Optically pumped...AlGaAs/GaAs DBR and GaAs substrate but to grow an antimonide RPG stack con- sisting of InGaSb quantum wells embedded in AlGaSb bar- riers on the latter

  17. Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications; Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstaerkungsmedien fuer Laseranwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Bueckers, Christina


    A microscopic many-particle theory is applied to model a wide range of semiconductor laser gain materials. The fundamental understanding of the gain medium and the underlying carrier interaction processes allow for the quantitative prediction of the optoelectronic properties governing the laser performance. Detailed theory-experiment-comparisons are shown for a variety of structures demonstrating the application capabilities of the theoretical approach. The microscopically calculated material properties, in particular absorption, optical gain, luminescence and the intrinsic carrier losses due to radiative and Auger-recombination, constitute the critical input to analyse and design laser structures. On this basis, important system features such as laser wavelength or threshold behaviour become predictable. However, the theory is also used in a diagnostic fashion, e.g. to extract otherwise poorly known structural parameter. Thus, novel concepts for the optimisation of laser designs may be developed with regard to the requirements of specific applications. Moreover, the approach allows for the systematic exploration and assessment of completely novel material systems and their application potential. (orig.)

  18. Synchronous pumping of picosecond dye laser using high efficiency second harmonic generation from optical fibres (United States)

    Lawandy, N. M.; Bernardin, J. P.; Macdonald, R. L.; Demouchy, G.


    The stable operation of a mode-locked dye laser synchronously pumped by the second harmonic of an Nd:YAG laser produced in an Nd codoped germanosilicate optical fiber is reported. The optical fiber preparation technique, which results in a second harmonic conversion efficiency of 2 percent, is described. This optical fiber SHG conversion efficiency is the highest reported to date using a continuous-wave mode-locked laser.

  19. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Podoskin, A. A., E-mail:; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)


    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  20. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.


    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.