WorldWideScience

Sample records for modelocked semiconductor lasers

  1. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

  2. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

  3. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

  4. Deep-red semiconductor monolithic mode-locked lasers

    International Nuclear Information System (INIS)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-01-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

  5. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  6. Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper; Kroh, Marcel

    2004-01-01

    We theoretically and experimentally investigate the dynamics of external-cavity mode-locked semiconductor lasers, focusing on stability properties, optimization of pulsewidth and timing jitter. A new numerical approach allows to clearly separate timing and amplitude jitter....

  7. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order ...

  8. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  9. Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

    NARCIS (Netherlands)

    Koumans, R.G.M.P.; Roijen, van R.

    1996-01-01

    We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

  10. Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2006-01-01

    We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

  11. Design and evaluation of modelocked semiconductor lasers for low noise and high stability

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2005-01-01

    We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

  12. Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

    Science.gov (United States)

    Kim, Jimyung; Delfyett, Peter J

    2008-07-21

    We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

  13. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Science.gov (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  14. Delay differential equations for mode-locked semiconductor lasers.

    Science.gov (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory

    2004-06-01

    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  15. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Science.gov (United States)

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  16. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    Science.gov (United States)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  17. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  18. Short pulse generation in a passively mode-locked photonic crystal semiconductor laser

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties......We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties...

  19. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

    Science.gov (United States)

    Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

    2017-11-01

    We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

  20. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  1. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr

    2005-01-01

    .... This work represents, to our knowledge, the first stabilized modelocked diode laser using PDH that achieves both supermode elimination and optical frequency comb stabilization. The resulting optical comb source may be useful for advanced RF imaging radar for optical sampling in ADC or in novel waveform generation (DAC's).

  2. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    Science.gov (United States)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  3. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  4. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-01-01

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  5. An ultra-long cavity passively mode-locked fiber laser based on nonlinear polarization rotation in a semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Liu, Tonghui; Jia, Dongfang; Yang, Jingwen; Chen, Jiong; Wang, Zhaoying; Yang, Tianxin

    2013-01-01

    In this paper we investigate an ultra-long cavity passively mode-locked fiber laser based on a semiconductor optical amplifier (SOA). Experimental results are presented which indicate that stable mode-locked pulses can be obtained by combining nonlinear polarization rotation (NPR) in the SOA with a polarization controller. By adding a 4 km single mode fiber into the ring cavity, a stable fundamental-order mode-locked pulse train with a repetition rate of 50.72 kHz is generated through the NPR effect in the SOA. The central wavelength, 3 dB bandwidth and single pulse energy of the output pulse are 1543.95 nm, 1.506 nm and 33.12 nJ, respectively. Harmonic mode-locked pulses are also observed in experiments when the parameters are chosen properly. (paper)

  6. Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    International Nuclear Information System (INIS)

    Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2005-01-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

  7. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

    OpenAIRE

    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

    2004-01-01

    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  8. Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser.

    Science.gov (United States)

    Kéfélian, Fabien; O'Donoghue, Shane; Todaro, Maria Teresa; McInerney, John; Huyet, Guillaume

    2009-04-13

    We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.

  9. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

    2010-01-01

    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  10. Dynamics of temporally localized states in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Schelte, C.; Javaloyes, J.; Gurevich, S. V.

    2018-05-01

    We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

  11. 18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

    2017-10-01

    We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

  12. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic......Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  13. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    International Nuclear Information System (INIS)

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  14. Self-stabilization of a mode-locked femtosecond fiber laser using a photonic bandgap fiber

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2010-01-01

    We demonstrate a self-stabilization mechanism of a semiconductor saturable absorber mode-locked linearcavity Yb-doped fiber laser using an intracavity photonic bandgap fiber. This mechanism relies on the spectral shift of the laser pulses to a spectral range of higher anomalous dispersion...... and higher loss of the photonic bandgap fiber, as a reaction to the intracavity power buildup. This, in particular, results in a smaller cavity loss for the stably mode-locked laser, as opposed to the Q-switched mode-locking scenario. The laser provides stable 39–49 pJ pulses of around 230 fs duration at 29...

  15. Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

    Science.gov (United States)

    Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

    2012-04-15

    A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

  16. InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

    Science.gov (United States)

    Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

    2018-02-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

  17. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin

    2004-01-01

    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  18. Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

    International Nuclear Information System (INIS)

    Shi, L W; Chen, Y H; Xu, B; Wang, Z C; Jiao, Y H; Wang, Z G

    2007-01-01

    In this review, the potential of mode-locked lasers based on advanced quantum-dot (QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects. (topical review)

  19. Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Hvam, Jørn Märcher

    2005-01-01

    We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design......-QW laser. There is good agreement between the measured results and existing theory....

  20. An automatic mode-locked system for passively mode-locked fiber laser

    Science.gov (United States)

    Li, Sha; Xu, Jun; Chen, Guoliang; Mei, Li; Yi, Bo

    2013-12-01

    This paper designs and implements one kind of automatic mode-locked system. It can adjust a passively mode-locked fiber laser to keep steady mode-locked states automatically. So the unsteadiness of traditional passively mode-locked fiber laser can be avoided. The system transforms optical signals into electrical pulse signals and sends them into MCU after processing. MCU calculates the frequency of the signals and judges the state of the output based on a quick judgment algorithm. A high-speed comparator is used to check the signals and the comparison voltage can be adjusted to improve the measuring accuracy. Then by controlling two polarization controllers at an angle of 45degrees to each other, MCU extrudes the optical fibers to change the polarization until it gets proper mode-locked output. So the system can continuously monitor the output signal and get it back to mode-locked states quickly and automatically. States of the system can be displayed on the LCD and PC. The parameters of the steady mode-locked states can be stored into an EEPROM so that the system will get into mode-locked states immediately next time. Actual experiments showed that, for a 6.238MHz passively mode-locked fiber lasers, the system can get into steady mode-locked states automatically in less than 90s after starting the system. The expected lock time can be reduced to less than 20s after follow up improvements.

  1. Class-A mode-locked lasers: Fundamental solutions

    Science.gov (United States)

    Kovalev, Anton V.; Viktorov, Evgeny A.

    2017-11-01

    We consider a delay differential equation (DDE) model for mode-locked operation in class-A semiconductor lasers containing both gain and absorber sections. The material processes are adiabatically eliminated as these are considered fast in comparison to the delay time for a long cavity device. We determine the steady states and analyze their bifurcations using DDE-BIFTOOL [Engelborghs et al., ACM Trans. Math. Software 28, 1 (2002)]. Multiple forms of coexistence, transformation, and hysteretic behavior of stable steady states and fundamental periodic regimes are discussed in bifurcation diagrams.

  2. Terahertz-bandwidth coherence measurements of a quantum dash laser in passive and active mode-locking operation.

    Science.gov (United States)

    Martin, Eamonn; Watts, Regan; Bramerie, Laurent; Shen, Alexandre; Gariah, Harry; Blache, Fabrice; Lelarge, Francois; Barry, Liam

    2012-12-01

    This research carries out coherence measurements of a 42.7 GHz quantum dash (QDash) semiconductor laser when passively, electrically, and optically mode-locked. Coherence of the spectral lines from the mode-locked laser is determined by examining the radio frequency beat-tone linewidth as the mode spacing is increased up to 1.1 THz. Electric-field measurements of the QDash laser are also presented, from which a comparison between experimental results and accepted theory for coherence in passively mode-locked lasers has been performed.

  3. Heterogeneous Silicon III-V Mode-Locked Lasers

    Science.gov (United States)

    Davenport, Michael Loehrlein

    Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

  4. A mode-locked external-cavity quantum-dot laser with a variable repetition rate

    International Nuclear Information System (INIS)

    Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

    2013-01-01

    A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  5. Instantaneous lineshape analysis of Fourier domain mode-locked lasers.

    Science.gov (United States)

    Todor, Sebastian; Biedermann, Benjamin; Wieser, Wolfgang; Huber, Robert; Jirauschek, Christian

    2011-04-25

    We present a theoretical and experimental analysis of the instantaneous lineshape of Fourier domain mode-locked (FDML) lasers, yielding good agreement. The simulations are performed employing a recently introduced model for FDML operation. Linewidths around 10 GHz are found, which is significantly below the sweep filter bandwidth. The effect of detuning between the sweep filter drive frequency and cavity roundtrip time is studied revealing features that cannot be resolved in the experiment, and shifting of the instantaneous power spectrum against the sweep filter center frequency is analyzed. We show that, in contrast to most other semiconductor based lasers, the instantaneous linewidth is governed neither by external noise sources nor by amplified spontaneous emission, but it is directly determined by the complex FDML dynamics.

  6. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  7. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  8. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  9. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  10. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  11. Control of fibre laser mode-locking by narrow-band Bragg gratings

    International Nuclear Information System (INIS)

    Laegsgaard, J

    2008-01-01

    The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

  12. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  13. Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

    Science.gov (United States)

    Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

    2018-02-01

    Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

  14. InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

    2018-02-01

    A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

  15. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  16. Mode-locked solid state lasers using diode laser excitation

    Science.gov (United States)

    Holtom, Gary R [Boston, MA

    2012-03-06

    A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

  17. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.

    1997-01-01

    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  18. Laser dynamics of asynchronous rational harmonic mode-locked fiber soliton lasers

    International Nuclear Information System (INIS)

    Jyu, Siao-Shan; Jiang, Guo-Hao; Lai, Yinchieh

    2013-01-01

    Laser dynamics of asynchronous rational harmonic mode-locked (ARHM) fiber soliton lasers are investigated in detail. In particular, based on the unique laser dynamics of asynchronous mode-locking, we have developed a new method for determining the effective active modulation strength in situ for ARHM lasers. By measuring the magnitudes of the slowly oscillating pulse timing position and central frequency, the effective phase modulation strength at the multiplication frequency of rational harmonic mode-locking can be accurately inferred. The method can be a very useful tool for developing ARHM fiber lasers. (paper)

  19. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  20. Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser

    International Nuclear Information System (INIS)

    Wu Yan-Hua; Jian Wu; Jin Peng; Wang Fei-Fei; Hu Fa-Jie; Wei Heng; Wang Zhan-Guo

    2015-01-01

    A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm (from 1137.3 nm to 1182.8 nm) under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ. (paper)

  1. Device geometry considerations for ridge waveguide quantum dot mode-locked lasers

    International Nuclear Information System (INIS)

    Mee, J K; Raghunathan, R; Lester, L F; Wright, J B

    2014-01-01

    Quantum dot mode-locked lasers have emerged as a leading source for the efficient generation of high-quality optical pulses from a compact package, attracting considerable attention for support of multiple high-speed applications, owing to characteristics such as low noise operation and high pulse peak power, in addition to the ability to multiplex the output pulse train in temporal and frequency domains in order to obtain hundreds of GHz pulse repetition rates potentially operating at 1 Tbps. This topical review provides a detailed explanation into the primary advantages of quantum dots, identifying the key features that have made them superior to other material systems for passive mode-locking in semiconductor lasers. Following this account, the impact of the device's cavity geometry on the operational range of two-section, monolithic passively mode-locked lasers is investigated both experimentally and analytically. A model is described that predicts regimes of pulsed operation as a function of absorber length to gain length ratio. Experimental measurements of the pulse time-domain characteristics over a wide range of operating temperatures are found to be in excellent agreement with analytical predictions. The impact of ridge waveguide design on the operational range is also examined and the key dimensions that most strongly impact efficient operation are identified. (topical review)

  2. Dispersion engineering of mode-locked fibre lasers

    Science.gov (United States)

    Woodward, R. I.

    2018-03-01

    Mode-locked fibre lasers are important sources of ultrashort pulses, where stable pulse generation is achieved through a balance of periodic amplitude and phase evolutions. A range of distinct cavity pulse dynamics have been revealed, arising from the interplay between dispersion and nonlinearity in addition to dissipative processes such as filtering. This has led to the discovery of numerous novel operating regimes, offering significantly improved laser performance. In this Topical Review, we summarise the main steady-state pulse dynamics reported to date through cavity dispersion engineering, including average solitons, dispersion-managed solitons, dissipative solitons, giant-chirped pulses and similaritons. Characteristic features and the stabilisation mechanism of each regime are described, supported by numerical modelling, in addition to the typical performance and limitations. Opportunities for further pulse energy scaling are discussed, in addition to considering other recent advances including automated self-tuning cavities and fluoride-fibre-based mid-infrared mode-locked lasers.

  3. Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina; Larsson, David; Semenova, Elizaveta

    2012-01-01

    We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.......We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated....

  4. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  5. High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

    International Nuclear Information System (INIS)

    Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

    2013-01-01

    We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

  6. Colliding Pulse Mode-Locked Laser Diode using Multimode Interference Reflectors

    NARCIS (Netherlands)

    Gordon Gallegos, Carlos; Guzmán, R.C.; Jimenez, A.; Leijtens, X.J.M.; Carpintero, G.

    2014-01-01

    We present a novel fully monolithic Colliding Pulse Mode-Locked Laser Diode (CPML) using Multimode Interference Reflectors (MMIRs) to create the laser resonator. We demonstrate experimentally for the first time to our knowledge the Colliding Pulse mode-locking of a laser using MMIRs by observation

  7. Actively mode-locked diode laser with a mode spacing stability of ∼6 × 10{sup -14}

    Energy Technology Data Exchange (ETDEWEB)

    Zakharyash, V F; Kashirsky, A V; Klementyev, V M [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-10-31

    We have studied mode spacing stability in an actively mode-locked external-cavity semiconductor laser. It has been shown that, in the case of mode spacing pulling to the frequency of a highly stable external microwave signal produced by a hydrogen standard (stability of 4 × 10{sup -14} over an averaging period τ = 10 s), this configuration ensures a mode spacing stability of 5.92 × 10{sup -14} (τ = 10 s). (control of radiation parameters)

  8. A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

    International Nuclear Information System (INIS)

    Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng

    2011-01-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

  9. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  10. Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Habruseva, T. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland); Aston University, Aston Triangle, B4 7ET Birmingham (United Kingdom); Arsenijević, D.; Kleinert, M.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Huyet, G.; Hegarty, S. P. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland)

    2014-01-13

    Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively.

  11. Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

    International Nuclear Information System (INIS)

    Habruseva, T.; Arsenijević, D.; Kleinert, M.; Bimberg, D.; Huyet, G.; Hegarty, S. P.

    2014-01-01

    Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively

  12. Diode-pumped passively mode-locked sub-picosecond Yb:LuAG ceramic laser

    International Nuclear Information System (INIS)

    Zhu Jiang-Feng; Liu Kai; Wang Jun-Li; Yang Yu; Wang Hui-Bo; Gao Zi-Ye; Jiang Li; Xie Teng-Fei; Chao-Yu Li; Pan Yu-Bai; Wei Zhi-Yi

    2017-01-01

    In this paper the laser activities of a diode-pumped Yb:LuAG ceramic which was prepared by the solid-state reactive sintering method were reported. The maximum output power was 1.86 W in the continuous wave (CW) laser operation, corresponding to a slope efficiency of 53.6%. The CW laser could be tuned from 1030 to 1096 nm by inserting a prism in the cavity. With the assist of a semiconductor saturable absorber mirror (SESAM), passive mode-locking was realized, delivering sub-picosecond pulses with 933 fs duration and an average power of 532 mW at a repetition rate of 90.35 MHz. (paper)

  13. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  14. Monolithic mode-locked lasers with deeply dry etched Bragg mirror

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    Background: Semiconductor mode-locked lasers are attractive as components in futureultra high-speed telecommunication systems (160-640Gb/s); as picosecond pulse sources,clock-recovery devices and for demultiplexing in Optical Time Division Multiplexing(OTDM) systems. We have recently designed...... it possible to buy epitaxial wafers fromphotonic foundries as in the microelectronic industry.Design: The reflectivity spectrum from the total grating is calculated by matrixmultiplication of the individual periodic grating elements. The period of the grating,given by the mean effective index of the low....... The SiO2-film functions as a mask in the subsequent RIE of thesemiconductor (InP). We are now optimizing the semiconductor RIE to achieve 2 µmdeep waveguides and gratings with smooth vertical sidewalls and smooth bottom surface.This optimization involves optimizing the reaction chamber parameters: CH4/H2...

  15. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  16. The continuous-wave passive mode-locking operation of a diode-pumped mixed Nd:Lu0.5Y0.5VO4 laser

    International Nuclear Information System (INIS)

    Huang, H-T; Xu, J-L; He, J-L; Zhang, S-Y; Xu, J-Q; Zhao, B

    2011-01-01

    We reported a continuous-wave (CW) passively mode-locked Nd:Lu 0.5 Y 0.5 VO 4 laser at 1064 nm. A partially reflective semiconductor saturable absorber mirror was exploited in the Z-typed resonator. The Nd:Lu 0.5 Y 0.5 VO 4 laser generated CW mode-locked pulses with an average output power of 860 mW, a repetition rate of 53.7 MHz, and a pulse duration of 8.7 ps

  17. Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

    Science.gov (United States)

    Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

    2018-01-01

    We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

  18. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  19. Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers.

    Science.gov (United States)

    Eigenwillig, Christoph M; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R; Klein, Thomas; Jirauschek, Christian; Huber, Robert

    2013-01-01

    Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

  20. Characterization of a FBG sensor interrogation system based on a mode-locked laser scheme.

    Science.gov (United States)

    Madrigal, Javier; Fraile-Peláez, Francisco Javier; Zheng, Di; Barrera, David; Sales, Salvador

    2017-10-02

    This paper is focused on the characterization of a fiber Bragg grating (FBG) sensor interrogation system based on a fiber ring laser with a semiconductor optical amplifier as the gain medium, and an in-loop electro-optical modulator. This system operates as a switchable active (pulsed) mode-locked laser. The operation principle of the system is explained theoretically and validated experimentally. The ability of the system to interrogate an array of different FBGs in wavelength and spatial domain is demonstrated. Simultaneously, the influence of several important parameters on the performance of the interrogation technique has been investigated. Specifically, the effects of the bandwidth and the reflectivity of the FBGs, the SOA gain, and the depth of the intensity modulation have been addressed.

  1. Mode-locked silicon evanescent lasers.

    Science.gov (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

    2007-09-03

    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  2. An actively mode-locked Ho: YAG solid laser pumped by a Tm: YLF laser

    International Nuclear Information System (INIS)

    Yao, B Q; Cui, Z; Wang, J; Duan, X M; Dai, T Y; Du, Y Q; Yuan, J H; Liu, W

    2015-01-01

    A continuous wave mode-locked (CWML) Ho: YAG laser based on an acousto-optic modulator (AOM) pumped by a 1.9 μm Tm: YLF laser is demonstrated. This is the first time a report on an active CWML Ho: YAG laser has been published. A maximum output power of 1.04 W at 2097.25 nm in the CWML regime is obtained at a pump power of 13.2 W, corresponding to a slope efficiency of 13.3%. The mode-locked pulse repetition frequency is 82.76 MHz and the single pulse energy is 12.57 nJ. The mode-locked pulse width is 102 ps measured through a no-background second harmonic autocorrelation with KTP as the nonlinear crystal. Furthermore, the M 2 factor is calculated to be 1.146. (letter)

  3. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  4. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.

    1996-01-01

    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  5. 532 nm continuous wave mode-locked Nd:GdVO4 laser with SESAM

    International Nuclear Information System (INIS)

    Li, L; Liu, J; Liu, M; Liu, S; Chen, F; Wang, W; Wang, Y

    2009-01-01

    We obtain continuous wave mode-locked Nd:GdVO 4 -KTP laser with a SESAM. This is the first report of CW mode-locked Nd:GdVO 4 -KTP laser with a SESAM to our knowledge. 396 mw CW mode-locked pulse is achieved at the incident power of 7.653 W, with the repetition about 95 MHz. The pulse duration is assumed to be 5.5 ps, this is the shortest green pulse of 532 nm with SESAM

  6. A net normal dispersion all-fiber laser using a hybrid mode-locking mechanism

    International Nuclear Information System (INIS)

    Xu, Bo; Martinez, Amos; Yamashita, Shinji; Set, Sze Yun; Goh, Chee Seong

    2014-01-01

    We propose and demonstrate an all-fiber, dispersion-mapped, erbium-doped fiber laser with net normal dispersion generating dissipative solitons. The laser is mode-locked by a hybrid mode-locking mechanism consisting of a nonlinear amplifying loop mirror and a carbon nanotube saturable absorber. We achieve self-starting, mode-locked operation generating 2.75 nJ pulses at a fundamental repetition rate of 10.22 MHz with remarkable long term stability. (letter)

  7. Pulse-shaping mechanism in colliding-pulse mode-locked laser diodes

    DEFF Research Database (Denmark)

    Bischoff, Svend; Sørensen, Mads Peter; Mørk, J.

    1995-01-01

    The large signal dynamics of passively colliding pulse mode-locked laser diodes is studied. We derive a model which explains modelocking via the interplay of gain and loss dynamics; no bandwidth limiting element is necessary for pulse formation. It is found necessary to have both fast and slow...... absorber dynamics to achieve mode-locking. Significant chirp is predicted for pulses emitted from long lasers, in agreement with experiment. The pulse width shows a strong dependence on both cavity and saturable absorber length. (C) 1995 American Institute of Physics....

  8. Mode-locked terahertz quantum cascade laser by direct phase synchronization

    International Nuclear Information System (INIS)

    Maussang, K.; Maysonnave, J.; Jukam, N.; Freeman, J. R.; Cavalié, P.; Dhillon, S. S.; Tignon, J.; Khanna, S. P.; Linfield, E. H.; Davies, A. G.; Beere, H. E.; Ritchie, D. A.

    2013-01-01

    Mode-locking of a terahertz quantum cascade laser is achieved using multimode injection seeding. Contrary to standard methods that rely on gain modulation, here a fixed phase relationship is directly imprinted to the laser modes. In this work, we demonstrate the generation of 9 ps phase mode-locked pulses around 2.75 THz. A direct measurement of the emitted field phase shows that it results from the phase of the initial injection

  9. Critical Behavior of Light in Mode-Locked Lasers

    Science.gov (United States)

    Weill, Rafi; Rosen, Amir; Gordon, Ariel; Gat, Omri; Fischer, Baruch

    2005-06-01

    Light is shown to exhibit critical and tricritical behavior in passively mode-locked lasers with externally injected pulses. It is a first and unique example of critical phenomena in a one-dimensional many-body light-mode system. The phase diagrams consist of regimes with continuous wave, driven parapulses, spontaneous pulses via mode condensation, and heterogeneous pulses, separated by phase transition lines that terminate with critical or tricritical points. Enhanced non-Gaussian fluctuations and collective dynamics are present at the critical and tricritical points, showing a mode system analog of the critical opalescence phenomenon. The critical exponents are calculated and shown to comply with the mean field theory, which is rigorous in the light system.

  10. Compact mode-locked diode laser system for high precision frequency comparisons in microgravity

    Science.gov (United States)

    Christopher, H.; Kovalchuk, E. V.; Wicht, A.; Erbert, G.; Tränkle, G.; Peters, A.

    2017-11-01

    Nowadays cold atom-based quantum sensors such as atom interferometers start leaving optical labs to put e.g. fundamental physics under test in space. One of such intriguing applications is the test of the Weak Equivalence Principle, the Universality of Free Fall (UFF), using different quantum objects such as rubidium (Rb) and potassium (K) ultra-cold quantum gases. The corresponding atom interferometers are implemented with light pulses from narrow linewidth lasers emitting near 767 nm (K) and 780 nm (Rb). To determine any relative acceleration of the K and Rb quantum ensembles during free fall, the frequency difference between the K and Rb lasers has to be measured very accurately by means of an optical frequency comb. Micro-gravity applications not only require good electro-optical characteristics but are also stringent in their demand for compactness, robustness and efficiency. For frequency comparison experiments the rather complex fiber laser-based frequency comb system may be replaced by one semiconductor laser chip and some passive components. Here we present an important step towards this direction, i.e. we report on the development of a compact mode-locked diode laser system designed to generate a highly stable frequency comb in the wavelength range of 780 nm.

  11. Active-passively mode-locked dye laser for diagnosis of laser-produced plasmas

    International Nuclear Information System (INIS)

    Teng, Y.L.; Fedosejevs, R.; Sigel, R.

    1981-03-01

    In this report an active-passively mode-locked, flashlamp-pumped dye laser for diagnosis of laser-produced plasmas is described. This dye laser system used as a pulsed light source for high-speed photography of laser-target experiments was synchronized to the ASTERIX III iodine laser pulse with better than 100 ps accuracy. The single pulse energy was 10 μJ, pulse duration less than 10 ps. In 111 shots clear shadowgrams were obtained during a total of 151 target shots, i.e. the system worked well in 74% of the shots. (orig.)

  12. High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

    Science.gov (United States)

    Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

    1991-01-01

    The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

  13. Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum.

    Science.gov (United States)

    Heck, Martijn J R; Bente, Erwin A J M; Smalbrugge, Barry; Oei, Yok-Siang; Smit, Meint K; Anantathanasarn, Sanguan; Nötzel, Richard

    2007-12-10

    First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.

  14. Mode-locking of a terahertz laser by direct phase synchronization.

    Science.gov (United States)

    Maysonnave, J; Maussang, K; Freeman, J R; Jukam, N; Madéo, J; Cavalié, P; Rungsawang, R; Khanna, S P; Linfield, E H; Davies, A G; Beere, H E; Ritchie, D A; Dhillon, S S; Tignon, J

    2012-09-10

    A novel scheme to achieve mode-locking of a multimode laser is demonstrated. Traditional methods to produce ultrashort laser pulses are based on modulating the cavity gain or losses at the cavity roundtrip frequency, favoring the pulsed emission. Here, we rather directly act on the phases of the modes, resulting in constructive interference for the appropriated phase relationship. This was performed on a terahertz quantum cascade laser by multimode injection seeding with an external terahertz pulse, resulting in phase mode-locked terahertz laser pulses of 9 ps duration, characterized unambiguously in the time domain.

  15. Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    DEFF Research Database (Denmark)

    Pedersen, Niels V.; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product=0.7) 1.5 μm 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...... results agree well with the simulation results obtained using a transmission line laser model (TLLM) model, Both experiments and numerical simulations show how the RF power and the detuning affect the pulsewidth...

  16. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  17. CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yan; Li, Yue; Xu, Jianqiu; Tang, Yulong, E-mail: yulong@sjtu.edu.cn [Key Laboratory for Laser Plasmas (MOE), Department of Physics and Astronomy, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240 (China); Hu, Zhiping; Tang, Xiaosheng [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044 (China)

    2016-06-27

    Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  18. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Science.gov (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  19. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications

    International Nuclear Information System (INIS)

    Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 10 5 , −1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on–off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of −17 and −15.2 dBm at a bit error rate of 10 −9 , respectively. (paper)

  20. The study of 80 MHz self starting passively mode-locked Erbium-Doped Fiber Laser via nonlinear polarization rotation with SESAM

    International Nuclear Information System (INIS)

    Qamar, F.

    2013-01-01

    Erbium-Doped Fiber Laser, EDF L, passively mode-locked via only Nonlinear Polarization Rotation, NPR, and via NPR with Semiconductor Saturable Absorber Mirror, SESAM, is studied. Self start single pulse train with pulse width of 114 fs and repetition rate (PRR) of 80 MHz has been obtained when 55 cm EDFL, passively mode-locked via NPR only. Inserting SESAM in EDFL cavity leads to shorten the pulse width up to 88 fs, increases the amplitude stability up to 96% and lower the phase noise jittering to around 26 fsec. Stable second harmonic self starting passively mode-locked EDFL with pulse width of 284 fs has also been observed only when SESAM was used in the cavity. Multi-pulsed system passively mode-locked via NPR for EDFL length of 80 cm with time difference between the successive multi-pulses ranged from few picoseconds to nanoseconds, has been observed. The time difference can be controlled by the polarizer controller and the half wave plate. Further controlling of the cavity polarization leads to developing the multiple mode locking pulses train to second harmonic mode-locking pulse train with PRR of 160MHz and pulse width of 156 fs. Three harmonic superposed trains of mode locked pulse have been achieved only when SESAM added to the cavity. (author)

  1. Deep learning and model predictive control for self-tuning mode-locked lasers

    Science.gov (United States)

    Baumeister, Thomas; Brunton, Steven L.; Nathan Kutz, J.

    2018-03-01

    Self-tuning optical systems are of growing importance in technological applications such as mode-locked fiber lasers. Such self-tuning paradigms require {\\em intelligent} algorithms capable of inferring approximate models of the underlying physics and discovering appropriate control laws in order to maintain robust performance for a given objective. In this work, we demonstrate the first integration of a {\\em deep learning} (DL) architecture with {\\em model predictive control} (MPC) in order to self-tune a mode-locked fiber laser. Not only can our DL-MPC algorithmic architecture approximate the unknown fiber birefringence, it also builds a dynamical model of the laser and appropriate control law for maintaining robust, high-energy pulses despite a stochastically drifting birefringence. We demonstrate the effectiveness of this method on a fiber laser which is mode-locked by nonlinear polarization rotation. The method advocated can be broadly applied to a variety of optical systems that require robust controllers.

  2. Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-12-29

    A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

  3. L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber

    International Nuclear Information System (INIS)

    Du, J; Zhang, S M; Li, H F; Meng, Y C; Li, X L; Hao, Y P

    2012-01-01

    We have proposed and demonstrated an L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber (SA). By adjusting the pump power and the polarization controller, we have experimentally observed L-band fundamental and harmonic mode-locked optical pulses. The fundamental optical pulse has the duration of 1.3 ps, and the maximum average output power of 13.16 mW at the incident pump power of 98.8 mW. The order of the harmonic mode-locked optical pulses can be changed over the range from the second to the fourth. From the experimental results, we deduced that the likely origin of the harmonic mode-locked self-stabilization was the result of global and local soliton interactions induced by the unstability continuous wave (CW) components

  4. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

    DEFF Research Database (Denmark)

    Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta

    2010-01-01

    This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser...

  5. Effects of resonator input power on Kerr lens mode-locked lasers

    Indian Academy of Sciences (India)

    lasers. S KAZEMPOUR, A KESHAVARZ∗ and G HONARASA. Department of Physics, Faculty of Sciences, Shiraz University of Technology, Shiraz, Iran ... Keywords. Femtosecond pulses; Kerr lens sensitivity; Kerr lens mode-locked laser. ... The optical lengths of Kerr medium with thickness d and refractive index n under.

  6. Characteristics and instabilities of mode-locked quantum-dot diode lasers.

    Science.gov (United States)

    Li, Yan; Lester, Luke F; Chang, Derek; Langrock, Carsten; Fejer, M M; Kane, Daniel J

    2013-04-08

    Current pulse measurement methods have proven inadequate to fully understand the characteristics of passively mode-locked quantum-dot diode lasers. These devices are very difficult to characterize because of their low peak powers, high bandwidth, large time-bandwidth product, and large timing jitter. In this paper, we discuss the origin for the inadequacies of current pulse measurement techniques while presenting new ways of examining frequency-resolved optical gating (FROG) data to provide insight into the operation of these devices. Under the assumptions of a partial coherence model for the pulsed laser, it is shown that simultaneous time-frequency characterization is a necessary and sufficient condition for characterization of mode-locking. Full pulse characterization of quantum dot passively mode-locked lasers (QD MLLs) was done using FROG in a collinear configuration using an aperiodically poled lithium niobate waveguide-based FROG pulse measurement system.

  7. Investigation of monolithic passively mode-locked quantum dot lasers with extremely low repetition frequency.

    Science.gov (United States)

    Xu, Tianhong; Cao, Juncheng; Montrosset, Ivo

    2015-01-01

    The dynamical regimes and performance optimization of quantum dot monolithic passively mode-locked lasers with extremely low repetition rate are investigated using the numerical method. A modified multisection delayed differential equation model is proposed to accomplish simulations of both two-section and three-section passively mode-locked lasers with long cavity. According to the numerical simulations, it is shown that fundamental and harmonic mode-locking regimes can be multistable over a wide current range. These dynamic regimes are studied, and the reasons for their existence are explained. In addition, we demonstrate that fundamental pulses with higher peak power can be achieved when the laser is designed to work in a region with smaller differential gain.

  8. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  9. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  10. A PASSIVELY MODE-LOCKED CR4+:FORSTERITE LASER WITH ELEСTRONICALLY CONTROLLED OUTPUT CHARACTERISTICS

    Directory of Open Access Journals (Sweden)

    S. A. Zolotovskaya

    2011-01-01

    Full Text Available Applicability of electronic control of laser output parameters to bulk solid-state laser sources is demonstrated. A single laser source with variable pulse duration for novel imaging and manipulation systems is presented. Stable passive mode-locking of a Cr4+:forsterite laser using a voltage controlled p-n junction quantum dot saturable absorber was achieved. Output shortening from 17,4 to 6,4 ps near-transform limited pulses was obtained by applying reverse bias.

  11. Dynamics of a broad-band quantum cascade laser: from chaos to coherent dynamics and mode-locking

    Science.gov (United States)

    Columbo, L. L.; Barbieri, S.; Sirtori, C.; Brambilla, M.

    2018-02-01

    The dynamics of a multimode Quantum Cascade Laser, is studied in a model based on effective semiconductor Maxwell-Bloch equations, encompassing key features for the radiationmedium interaction such as an asymmetric, frequency dependent, gain and refractive index as well as the phase-amplitude coupling provided by the Henry factor. By considering the role of the free spectral range and Henry factor, we develop criteria suitable to identify the conditions which allow to destabilize, close to threshold, the traveling wave emitted by the laser and lead to chaotic or regular multimode dynamics. In the latter case our simulations show that the field oscillations are associated to self-confined structures which travel along the laser cavity, bridging mode-locking and solitary wave propagation. In addition, we show how a RF modulation of the bias current leads to active mode-locking yielding high-contrast, picosecond pulses. Our results compare well with recent experiments on broad-band THz-QCLs and may help understanding the conditions for the generation of ultrashort pulses and comb operation in Mid-IR and THz spectral regions

  12. Modeling of mode-locked coupled-resonator optical waveguide lasers

    DEFF Research Database (Denmark)

    Agger, Christian; Skovgård, Troels Suhr; Gregersen, Niels

    2010-01-01

    Coupled-resonator optical waveguides made from coupled high-Q photonic crystal nanocavities are investigated for use as cavities in mode-locked lasers. Such devices show great potential in slowing down light and can serve to reduce the cavity length of a mode-locked laser. An explicit expression...... of the emerging pulse train. A range of tuning around this frequency allows for effective mode locking. Finally, noise is added to the generalized single-cavity eigenfrequencies in order to evaluate the effects of fabrication imperfections on the cold-cavity transmission properties and consequently on the locking...

  13. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2003-01-01

    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW....

  14. 35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

    DEFF Research Database (Denmark)

    Kuntz, M.; Fiol, G.; Laemmlin, M.

    2004-01-01

    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 ìm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses.......We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 ìm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses....

  15. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  16. Mode-locking dynamics in a quantum-dash Fabry-Pérot laser diode for packet based clock recovery applications

    NARCIS (Netherlands)

    Maldonado-Basilio, R.; Parra-Cetina, J.; Latkowski, S.; Landais, P.; Calabretta, N.

    2012-01-01

    We experimentally investigate the locking/unlocking dynamics of a mode-locked QDash laser diode for packet-based clock-recovery applications. Results show 20 ns locking times for the passively and externally synchronized mode-locking mechanisms.

  17. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  18. Hysteresis phenomena and multipulse formation of a dissipative system in a passively mode-locked fiber laser

    International Nuclear Information System (INIS)

    Liu Xueming

    2010-01-01

    A model describing the dissipative soliton evolution in a passively mode-locked fiber laser is proposed by using the nonlinear polarization rotation technique and the spectral filtering effect. It is numerically found that the laser alternately evolves on the stable and unstable mode-locking states as a function of the pump strength. Numerical simulations show that the passively mode-locked fiber lasers with large net normal dispersion can operate on multiple pulse behavior and hysteresis phenomena. The experimental observations confirm the theoretical predictions. The theoretical and experimental results achieved are qualitatively distinct from those observed in net-anomalous-dispersion conventional-soliton fiber lasers.

  19. Three-dimensional graphene based passively mode-locked fiber laser.

    Science.gov (United States)

    Yang, Y; Loeblein, M; Tsang, S H; Chow, K K; Teo, E H T

    2014-12-15

    We present an all-fiber passively mode-locked fiber laser incorporating three-dimensional (3D) graphene as a saturable absorber (SA) for the first time to the best of our knowledge. The 3D graphene is synthesized by template-directed chemical vapor deposition (CVD). The SA is then simply formed by sandwiching the freestanding 3D graphene between two conventional fiber connectors without any deposition process. It is demonstrated that such 3D graphene based SA is capable to produce high quality mode-locked pulses. A passively mode-locked fiber laser is constructed and stable output pulses with a fundamental repetition rate of ~9.9 MHz and a pulse width of ~1 ps are generated from the fiber laser. The average output power of the laser is ~10.5 mW while the output pulse is operating at single pulse region. The results imply that the freestanding 3D graphene can be applied as an effective saturable absorption material for passively mode-locked lasers.

  20. Instant recording of the duration of a single mode-locked Nd:YAG laser pulse

    International Nuclear Information System (INIS)

    Lompre, L.A.; Mainfray, G.; Thebault, J.

    1975-01-01

    An electro-optic streak camera incorporating a storage memory video system has been developed and used to instantly visualize and record the shape of a 1.06-μ-wavelength pulse generated by a mode-locked Nd:YAG laser. The duration of a single laser pulse (approximately 30 psec) has been directly measured with and without laser amplification. (U.S.)

  1. All-fiber nonlinearity- and dispersion-managed dissipative soliton nanotube mode-locked laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Nanjing University of Posts and Communications, Nanjing 210003 (China); Popa, D., E-mail: dp387@cam.ac.uk; Wittwer, V. J.; Milana, S.; Hasan, T.; Jiang, Z.; Ferrari, A. C. [Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Ilday, F. Ö. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)

    2015-12-14

    We report dissipative soliton generation from an Yb-doped all-fiber nonlinearity- and dispersion-managed nanotube mode-locked laser. A simple all-fiber ring cavity exploits a photonic crystal fiber for both nonlinearity enhancement and dispersion compensation. The laser generates stable dissipative solitons with large linear chirp in the net normal dispersion regime. Pulses that are 8.7 ps long are externally compressed to 118 fs, outperforming current nanotube-based Yb-doped fiber laser designs.

  2. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  3. Broadband Fourier domain mode-locked laser for optical coherence tomography at 1060 nm

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2012-01-01

    Optical coherence tomography (OCT) in the 1060nm range is interesting for in vivo imaging of the human posterior eye segment (retina, choroid, sclera) due to low absorption in water and deep penetration into the tissue. Rapidly tunable light sources, such as Fourier domain mode-locked (FDML) lasers...

  4. The effect of transverse multi-mode oscillation in passively modelocked solid-state lasers

    Science.gov (United States)

    Agnesi, A.; Reali, G. C.; Gabetta, G.

    1992-03-01

    We demonstrate that the pulses from a passively mode-locked flashlamp pumped solid-state laser can be considerably shorter using an antiresonant-ring mirror than using a linear cavity with a standard contacted dye-cell mirror, and we suggest that transverse-mode-filtering effects in the antiresonant ring play an important role in explaining this difference.

  5. Correlation coefficient measurement of the mode-locked laser tones using four-wave mixing.

    Science.gov (United States)

    Anthur, Aravind P; Panapakkam, Vivek; Vujicic, Vidak; Merghem, Kamel; Lelarge, Francois; Ramdane, Abderrahim; Barry, Liam P

    2016-06-01

    We use four-wave mixing to measure the correlation coefficient of comb tones in a quantum-dash mode-locked laser under passive and active locked regimes. We study the uncertainty in the measurement of the correlation coefficient of the proposed method.

  6. Harmonic mode-locking using the double interval technique in quantum dot lasers.

    Science.gov (United States)

    Li, Yan; Chiragh, Furqan L; Xin, Yong-Chun; Lin, Chang-Yi; Kim, Junghoon; Christodoulou, Christos G; Lester, Luke F

    2010-07-05

    Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10(th) harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.

  7. Harmonic Mode-Locked Fiber Laser based on Photonic Crystal Fiber Filled with Topological Insulator Solution

    Directory of Open Access Journals (Sweden)

    Yu-Shan Chen

    2015-04-01

    Full Text Available We reported that the photonic crystal fiber (PCF filled with TI:Bi2Te3 nanosheets solution could act as an effective saturable absorber (SA. Employing this TI-PCF SA device; we constructed an ytterbium-doped all-fiber laser oscillator and achieved the evanescent wave mode-locking operation. Due to the large cavity dispersion; the fundamental mode-locking pulse had the large full width at half maximum (FWHM of 2.33 ns with the repetition rate of ~1.11 MHz; and the radio frequency (RF spectrum with signal-to-noise ratio (SNR of 61 dB. In addition; the transition dynamics from a bunched state of pulses to harmonic mode-locking (HML was also observed; which was up to 26th order.

  8. Dual comb generation from a mode-locked fiber laser with orthogonally polarized interlaced pulses.

    Science.gov (United States)

    Akosman, Ahmet E; Sander, Michelle Y

    2017-08-07

    Ultra-high precision dual-comb spectroscopy traditionally requires two mode-locked, fully stabilized lasers with complex feedback electronics. We present a novel mode-locked operation regime in a thulium-holmium co-doped fiber laser, a frequency-halved state with orthogonally polarized interlaced pulses, for dual comb generation from a single source. In a linear fiber laser cavity, an ultrafast pulse train composed of co-generated, equal intensity and orthogonally polarized consecutive pulses at half of the fundamental repetition rate is demonstrated based on vector solitons. Upon optical interference of the orthogonally polarized pulse trains, two stable microwave RF beat combs are formed, effectively down-converting the optical properties into the microwave regime. These co-generated, dual polarization interlaced pulse trains, from one all-fiber laser configuration with common mode suppression, thus provide an attractive compact source for dual-comb spectroscopy, optical metrology and polarization entanglement measurements.

  9. Tunable radio-frequency photonic filter based on an actively mode-locked fiber laser.

    Science.gov (United States)

    Ortigosa-Blanch, A; Mora, J; Capmany, J; Ortega, B; Pastor, D

    2006-03-15

    We propose the use of an actively mode-locked fiber laser as a multitap optical source for a microwave photonic filter. The fiber laser provides multiple optical taps with an optical frequency separation equal to the external driving radio-frequency signal of the laser that governs its repetition rate. All the optical taps show equal polarization and an overall Gaussian apodization, which reduces the sidelobes. We demonstrate continuous tunability of the filter by changing the external driving radio-frequency signal of the laser, which shows good fine tunability in the operating range of the laser from 5 to 10 GHz.

  10. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  11. Femtosecond Mode-locked Fiber Laser at 1 μm Via Optical Microfiber Dispersion Management.

    Science.gov (United States)

    Wang, Lizhen; Xu, Peizhen; Li, Yuhang; Han, Jize; Guo, Xin; Cui, Yudong; Liu, Xueming; Tong, Limin

    2018-03-16

    Mode-locked Yb-doped fiber lasers around 1 μm are attractive for high power applications and low noise pulse train generation. Mode-locked fiber lasers working in soliton and stretched-pulse regime outperform others in terms of the laser noise characteristics, mechanical stability and easy maintenance. However, conventional optical fibers always show a normal group velocity dispersion around 1 μm, leading to the inconvenience for necessary dispersion management. Here we show that optical microfibers having a large anomalous dispersion around 1 μm can be integrated into mode-locked Yb-doped fiber lasers with ultralow insertion loss down to -0.06 dB, enabling convenient dispersion management of the laser cavity. Besides, optical microfibers could also be adopted to spectrally broaden and to dechirp the ultrashort pulses outside the laser cavity, giving rise to a pulse duration of about 110 fs. We believe that this demonstration may facilitate all-fiber format high-performance ultrashort pulse generation at 1 μm and may find applications in precision measurements, large-scale facility synchronization and evanescent-field-based optical sensing.

  12. Dynamics of a Dispersion-Managed Passively Mode-Locked Er-Doped Fiber Laser Using Single Wall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Norihiko Nishizawa

    2015-07-01

    Full Text Available We investigated the dynamics of a dispersion-managed, passively mode-locked, ultrashort-pulse, Er-doped fiber laser using a single-wall carbon nanotube (SWNT device. A numerical model was constructed for analysis of the SWNT fiber laser. The initial process of passive mode-locking, the characteristics of the output pulse, and the dynamics inside the cavity were investigated numerically for soliton, dissipative-soliton, and stretched-pulse mode-locking conditions. The dependencies on the total dispersion and recovery time of the SWNTs were also examined. Numerical results showed similar behavior to experimental results.

  13. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  14. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  15. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  16. 11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

    Science.gov (United States)

    Okhrimchuk, Andrey G; Obraztsov, Petr A

    2015-06-08

    We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

  17. Diode-pumped Kerr-lens mode-locked femtosecond Yb:YAG ceramic laser

    Science.gov (United States)

    Zi-Ye, Gao; Jiang-Feng, Zhu; Ke, Wang; Jun-Li, Wang; Zhao-Hua, Wang; Zhi-Yi, Wei

    2016-02-01

    We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb:YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb:YAG ceramic laser with sub-100 fs pulse duration. Project supported by the National Major Scientific Instrument Development Project of China (Grant No. 2012YQ120047), the National Natural Science Foundation of China (Grant No. 61205130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140502).

  18. Tungsten diselenide for mode-locked erbium-doped fiber lasers with short pulse duration

    Science.gov (United States)

    Liu, Wenjun; Liu, Mengli; OuYang, Yuyi; Hou, Huanran; Ma, Guoli; Lei, Ming; Wei, Zhiyi

    2018-04-01

    In this paper, a WSe2 film prepared by chemical vapor deposition (CVD) is transferred onto a tapered fiber, and a WSe2 saturable absorber (SA) is fabricated. In order to measure the third-order optical nonlinearity of the WSe2, the Z-scan technique is applied. The modulation depth of the WSe2 SA is measured as being 21.89%. Taking advantage of the remarkable nonlinear absorption characteristic of the WSe2 SA, a mode-locked erbium-doped fiber laser is demonstrated at 1557.4 nm with a bandwidth of 25.8 nm and signal to noise ratio of 96 dB. To the best of our knowledge, the pulse duration of 163.5 fs is confirmed to be the shortest compared with previous mode-locked fiber lasers based on transition-metal dichalcogenides SAs. These results indicate that WSe2 is a powerful competitor in the application of ultrashort pulse lasers.

  19. Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

    International Nuclear Information System (INIS)

    Liu, Yuanshan; Zhang, Jian-Guo; Chen, Guofu; Zhao, Wei; Bai, Jing

    2010-01-01

    We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 µm wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice

  20. General description and understanding of the nonlinear dynamics of mode-locked fiber lasers.

    Science.gov (United States)

    Wei, Huai; Li, Bin; Shi, Wei; Zhu, Xiushan; Norwood, Robert A; Peyghambarian, Nasser; Jian, Shuisheng

    2017-05-02

    As a type of nonlinear system with complexity, mode-locked fiber lasers are known for their complex behaviour. It is a challenging task to understand the fundamental physics behind such complex behaviour, and a unified description for the nonlinear behaviour and the systematic and quantitative analysis of the underlying mechanisms of these lasers have not been developed. Here, we present a complexity science-based theoretical framework for understanding the behaviour of mode-locked fiber lasers by going beyond reductionism. This hierarchically structured framework provides a model with variable dimensionality, resulting in a simple view that can be used to systematically describe complex states. Moreover, research into the attractors' basins reveals the origin of stochasticity, hysteresis and multistability in these systems and presents a new method for quantitative analysis of these nonlinear phenomena. These findings pave the way for dynamics analysis and system designs of mode-locked fiber lasers. We expect that this paradigm will also enable potential applications in diverse research fields related to complex nonlinear phenomena.

  1. High-energy harmonic mode-locked 2 μm dissipative soliton fiber lasers

    International Nuclear Information System (INIS)

    Yang, Nan; Tang, Yulong; Xu, Jianqiu

    2015-01-01

    High-pulse-energy harmonic mode-locking in 2 μm Tm-doped fiber lasers (TDFLs) is realized, for the first time, by using a short piece of anomalous dispersion gain fiber and the dissipative soliton mode-locking mechanism. Appropriately designing the cavity dispersion map and adjusting the cavity gain, stable harmonic mode-locking of the dissipative soliton TDFL from the 2nd to the 4th order is achieved, with the pulsing repetition rates and pulse energy being 43.4, 65.1, 86.8 MHz, and 6.27, 4.32 and 3.29 nJ, respectively. The harmonic laser pulse has a pulse width of ∼30 ps and a center wavelength of ∼1929 nm with a spectral bandwidth of ∼3.26 nm, giving a highly chirped laser pulse. Two types of soliton molecules are also observed in this laser system. (letter)

  2. Multi-operational tuneable Q-switched mode-locking Er fibre laser

    Science.gov (United States)

    Qamar, F. Z.

    2018-01-01

    A wavelength-spacing tuneable, Q-switched mode-locking (QML) erbium-doped fibre laser based on non-linear polarization rotation controlled by four waveplates and a cube polarizer is proposed. A mode-locked pulse train using two quarter-wave plates and a half-wave plate (HWP) is obtained first, and then an extra HWP is inserted into the cavity to produce different operation regimes. The evolutions of temporal and spectral dynamics with different orientation angles of the extra HWP are investigated. A fully modulated stable QML pulse train is observed experimentally. This is, to the author’s best knowledge, the first experimental work reporting QML operation without adding an extra saturable absorber inside the laser cavity. Multi-wavelength pulse laser operation, multi-pulse train continuous-wave mode-locking operation and pulse-splitting operations are also reported at certain HWP angles. The observed operational dynamics are interpreted as a mutual interaction of dispersion, non-linear effect and insertion loss. This work provides a new mechanism for fabricating cheap tuneable multi-wavelength lasers with QML pulses.

  3. Harmonic mode-locking and sub-round-trip time nonlinear dynamics of electro-optically controlled solid state laser

    Science.gov (United States)

    Gorbunkov, M. V.; Maslova, Yu Ya; Petukhov, V. A.; Semenov, M. A.; Shabalin, Yu V.; Tunkin, V. G.

    2018-03-01

    Harmonic mode-locking in a solid state laser due to optoelectronic control is studied numerically on the basis of two methods. The first one is detailed numeric simulation taking into account laser radiation fine time structure. It is shown that optimally chosen feedback delay leads to self-started mode-locking with generation of desired number of pulses in the laser cavity. The second method is based on discrete maps for short laser pulse energy. Both methods show that the application of combination of positive and negative feedback loops allows to reduce the period of regular nonlinear dynamics down to a fraction of a laser cavity round trip time.

  4. Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

    International Nuclear Information System (INIS)

    Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Wei, Zhiyi; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun

    2015-01-01

    A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF 2 disordered crystal was demonstrated. The Y 3+ -codoping in Nd : CaF 2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF 2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier. (letter)

  5. Optimizing the active region of interband cascade lasers for passive mode-locking

    Directory of Open Access Journals (Sweden)

    K. Ryczko

    2017-01-01

    Full Text Available The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

  6. Diode-pumped passively mode-locked composite crystal Nd:Lu0.15Y0.85VO4 laser at 1342.2 nm

    International Nuclear Information System (INIS)

    Qiao, Wenchao; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian; Li, Tao; Zhao, Jia; Zhao, Bin

    2015-01-01

    A diode-pumped mode-locked Nd:Lu 0.15 Y 0.85 VO 4 laser running at 1342.2 nm is firstly demonstrated with a semiconductor saturable absorber mirror (SESAM). Stable mode-locking pulses with the pulse-duration of 15.2 ps and the repetition rate of 32.8 MHz have been achieved. With a pumping power of 7.1 W, an output power of 786 mW was obtained, corresponding to an optical conversion efficiency of 11%. A maximum mode-locked pulse energy was estimated to be 23.96 nJ with a peak power of 1.58 kW. (paper)

  7. Narrow Q-switching pulse width and low mode-locking repetition rate Q-switched mode locking with a new coupled laser cavity

    International Nuclear Information System (INIS)

    Peng, J Y; Zheng, Y; Shen, J P; Shi, Y X

    2013-01-01

    An original diode-pumped Q-switched and mode-locked solid state Nd:GdVO 4 laser is demonstrated. The laser operates with double saturable absorbers and a new coupled laser cavity. The Q-switching envelope width is compressed to be about 15 ns and the mode-locking repetition rate is as low as 90 MHz. (paper)

  8. Mode-locked Pr3+-doped silica fiber laser with an external cavity

    DEFF Research Database (Denmark)

    Shi, Yuan; Poulsen, Christian; Sejka, Milan

    1994-01-01

    We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...... power have been investigated. With a short piece of nonlinear fiber included in the external cavity, laser pulses of 45 ps have been measured...

  9. Towards attosecond synchronization of remote mode-locked lasers using stabilized transmission of optical comb frequencies

    Science.gov (United States)

    Wilcox, R. B.; Byrd, J. M.; Doolittle, L. R.; Holzwarth, R.; Huang, G.

    2011-09-01

    We propose a method of synchronizing mode-locked lasers separated by hundreds of meters with the possibility of achieving sub-fs performance by locking the phases of corresponding lines in the optical comb spectrum. The optical phase from one comb line is transmitted to the remote laser over an interferometrically stabilized link by locking a single frequency laser to a comb line with high phase stability. We describe how these elements are integrated into a complete system and estimate the potential performance.

  10. Picosecond trigger system useful in mode-locked laser pulse measurements

    International Nuclear Information System (INIS)

    Cunin, B.; Miehe, J.A.; Sipp, B.; Thebault, J.

    1976-01-01

    A highly sensitive tunnel diode trigger useful in temporal intensity build-up measurements of mode-locked lasers has been developed; the device reduces notably the time walk due to the lack of repeatability in intensity of the laser output. The performance of the trigger have been established by means of a GHz wideband-0.1V/cm sensitive real-time oscilloscope and of an image converter camera having a picosecond resolution: the experimental results show that a variation of the amplitude of the laser pulse train of a factor 5 leads to a time jitter of less than 30 ps (Auth.)

  11. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  12. Delay induced high order locking effects in semiconductor lasers

    Science.gov (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

    2017-11-01

    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  13. Asynchronous and synchronous dual-wavelength pulse generation in a passively mode-locked fiber laser with a mode-locker.

    Science.gov (United States)

    Hu, Guoqing; Pan, Yingling; Zhao, Xin; Yin, Siyao; Zhang, Meng; Zheng, Zheng

    2017-12-01

    The evolution from asynchronous to synchronous dual-wavelength pulse generation in a passively mode-locked fiber laser is experimentally investigated by tailoring the intracavity dispersion. Through tuning the intracavity-loss-dependent gain profile and the birefringence-induced filter effect, asynchronous dual-wavelength soliton pulses can be generated until the intracavity anomalous dispersion is reduced to ∼8  fs/nm. The transition from asynchronous to synchronous pulse generation is then observed at an elevated pump power in the presence of residual anomalous dispersion, and it is shown that pulses are temporally synchronized at the mode-locker in the cavity. Spectral sidelobes are observed and could be attributed to the four-wave-mixing effect between dual-wavelength pulses at the carbon nanotube mode-locker. These results could provide further insight into the design and realization of such dual-wavelength ultrafast lasers for different applications such as dual-comb metrology as well as better understanding of the inter-pulse interactions in such dual-comb lasers.

  14. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    Science.gov (United States)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  15. Mode-locked fiber laser using SU8 resist incorporating carbon nanotubes

    Science.gov (United States)

    Hernandez-Romano, Ivan; Mandridis, Dimitrios; May-Arrioja, Daniel A.; Sanchez-Mondragon, Jose J.; Delfyett, Peter J.

    2011-06-01

    We report the fabrication of a saturable absorber made of a novel polymer SU8 doped with Single Wall Carbon Nanotubes (SWCNTs). A passive mode-locked ring cavity fiber laser was built with a 100 μm thick SU8/SWCNT film inserted between two FC/APC connectors. Self-starting passively mode-locked lasing operation was observed at 1572.04 nm, with a FWHM of 3.26 nm. The autocorrelation trace was 1.536 ps corresponding to a pulse-width of 871 fs. The time-bandwidth product was 0.344, which is close enough to transform-limited sech squared pulses. The repetition rate was 21.27 MHz, and a maximum average output power of 1 mW was also measured.

  16. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  17. Stability of the mode-locking regime in tapered quantum-dot lasers

    Science.gov (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

    2018-02-01

    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  18. Wavelength and pulse duration tunable ultrafast fiber laser mode-locked with carbon nanotubes

    OpenAIRE

    Li, Diao; Jussila, Henri; Wang, Yadong; Hu, Guohua; Albrow-Owen, Tom; C. T. Howe, Richard; Ren, Zhaoyu; Bai, Jintao; Hasan, Tawfique; Sun, Zhipei

    2018-01-01

    Ultrafast lasers with tunable parameters in wavelength and time domains are the choice of light source for various applications such as spectroscopy and communication. Here, we report a wavelength and pulse-duration tunable mode-locked Erbium doped fiber laser with single wall carbon nanotube-based saturable absorber. An intra-cavity tunable filter is employed to continuously tune the output wavelength for 34 nm (from 1525 nm to 1559 nm) and pulse duration from 545 fs to 6.1 ps, respectively....

  19. Spectral dynamics of square pulses in passively mode-locked fiber lasers

    Science.gov (United States)

    Semaan, Georges; Komarov, Andrey; Niang, Alioune; Salhi, Mohamed; Sanchez, François

    2018-02-01

    We investigate experimentally and numerically the spectral dynamics of square pulses generated in passively mode-locked fiber lasers under the dissipative soliton resonance. The features of the transition from the single-peak spectral profile to the doublet spectrum with increasing pump power are studied. The used master equation takes into account the gain saturation, the quadratic frequency dispersion of the gain and the refractive index, and the cubic-quintic nonlinearity of the losses and refractive index. Experimental data are obtained for an Er:Yb-doped fiber ring laser. The theoretical and experimental results are in good agreement with each other.

  20. Nonlinear High-Energy Pulse Propagation in Graded-Index Multimode Optical Fibers for Mode-Locked Fiber Lasers

    Science.gov (United States)

    2014-12-23

    power kW at nm in a C-GIMF segment in the lowest order mode ; this pulse can be ob- tained from a typical titanium –sapphire mode-locked laser . A much...single- andmulticore double- clad and PCF lasers . He was a Senior Research Scientist at Corning Inc. from 2005 to 2008. He is currently an Assistant...High-Energy Pulse Propagation in Graded-Index Multimode Optical Fibers for Mode-Locked Fiber Lasers 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-12-1

  1. High-power femtosecond pulse generation in a passively mode-locked Nd:SrLaAlO4 laser

    Science.gov (United States)

    Liu, Shan-De; Dong, Lu-Lu; Zheng, Li-He; Berkowski, Marek; Su, Liang-Bi; Ren, Ting-Qi; Peng, Yan-Dong; Hou, Jia; Zhang, Bai-Tao; He, Jing-Liang

    2016-07-01

    A high optical quality Nd:SrLaAlO4 (Nd:SLA) crystal was grown using the Czochralski method and showed broad fluorescence spectrum with a full width at half maximum value of 34 nm, which is beneficial for generating femtosecond laser pulses. A stable diode-pumped passively mode-locked femtosecond Nd:SLA laser with 458 fs pulse duration was achieved for the first time at a central wavelength of 1077.9 nm. The average output power of the continuous-wave mode-locked laser was 520 mW and the repetition rate was 78.5 MHz.

  2. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm.

    Science.gov (United States)

    Heck, Martijn J R; Salumbides, Edcel J; Renault, Amandine; Bente, Erwin A J M; Oei, Yok-Siang; Smit, Meint K; van Veldhoven, René; Nötzel, Richard; Eikema, Kjeld S E; Ubachs, Wim

    2009-09-28

    For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material.

  3. Scaling Fiber Lasers to Large Mode Area: An Investigation of Passive Mode-Locking Using a Multi-Mode Fiber.

    Science.gov (United States)

    Ding, Edwin; Lefrancois, Simon; Kutz, Jose Nathan; Wise, Frank W

    2011-01-01

    The mode-locking of dissipative soliton fiber lasers using large mode area fiber supporting multiple transverse modes is studied experimentally and theoretically. The averaged mode-locking dynamics in a multi-mode fiber are studied using a distributed model. The co-propagation of multiple transverse modes is governed by a system of coupled Ginzburg-Landau equations. Simulations show that stable and robust mode-locked pulses can be produced. However, the mode-locking can be destabilized by excessive higher-order mode content. Experiments using large core step-index fiber, photonic crystal fiber, and chirally-coupled core fiber show that mode-locking can be significantly disturbed in the presence of higher-order modes, resulting in lower maximum single-pulse energies. In practice, spatial mode content must be carefully controlled to achieve full pulse energy scaling. This paper demonstrates that mode-locking performance is very sensitive to the presence of multiple waveguide modes when compared to systems such as amplifiers and continuous-wave lasers.

  4. Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers

    NARCIS (Netherlands)

    Tahvili, M.S.; Du, L.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2012-01-01

    We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two

  5. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  6. Mode-Locked 1.5 um Semiconductor Optical Fiber Ring

    DEFF Research Database (Denmark)

    Pedersen, Niels Vagn; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product = 0.7) 1.5 um 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental r...

  7. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  8. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  9. The noise of ultrashort pulse mode-locked lasers beyond the slowly varying envelope approximation

    International Nuclear Information System (INIS)

    Takushima, Y; Haus, H A; Kaertner, F X

    2004-01-01

    The zero-point fluctuations in an L-C circuit of finite Q are revisited. The zero-point energy is shown to approach the value of hbarω 0 /2 only in the limit of an infinite Q. A Fabry-Perot resonator, on the other hand, has bounded zero-point energies of its modes that are equal to hbarω n /2 for each resonance. Based on the Fabry-Perot resonator with broadband noise, we analyse the noise of an ultrafast mode-locked laser when the slowly varying envelope approximation (SVEA) is not valid. This is achieved by reinterpreting the quantized form of the master equation of mode locking as an equation of motion for the electric field rather than for the creation operator of a photon. It is found that in this formulation quantum correlations exist that are not present in the SVEA. The correlations become evident in the spectrum of the zero-point fluctuations and therefore in the background noise of the laser. This behaviour can be detected by homodyne detection of the laser output. The linewidth of the frequency comb generated by the mode-locked laser is not affected by these correlations and is given by the Schawlow-Townes linewidth of an equivalent continuous wave taking the additional intracavity loss due to the mode locking process into account

  10. Effect of the doped fibre length on soliton pulses of a bidirectional mode-locked fibre laser

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, H; Alwi Kutty, N A; Zulkifli, M Z; Harun, S W [Photonics Research Center (Department of Physics), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-08-31

    A passively bidirectional mode-locked fibre laser is demonstrated using a highly concentrated erbium-doped fibre (EDF) as a gain medium. To accomplish mode-locked operation in a short cavity, use is made of carbon nanotubes (CNTs) as a saturable absorber. Soliton pulses are obtained at a wavelength of 1560 nm with a repetition rate ranging from 43.92 MHz to 46.97 MHz and pulse width stretching from 0.56 ps to 0.41 ps as the EDF length is reduced from 60 cm to 30 cm. (lasers)

  11. Dispersive-cavity actively mode-locked fiber laser for stable radio frequency delivery

    International Nuclear Information System (INIS)

    Dai, Yitang; Wang, Ruixin; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong

    2013-01-01

    We report a novel technique for highly stable transfer of a radio frequency (RF) comb over long optical fiber link, which is highly dispersive and is a part of an actively mode-locked fiber laser. Phase fluctuation along the fiber link, which is mainly induced by physical vibration and temperature fluctuations, is automatically compensated by the self-adapted wavelength shifting. Without phase-locking loop or any tunable parts, stable radio frequency is transferred over a 2-km fiber link, with a time jitter suppression ratio larger than 110. (letter)

  12. Polariton condensation, superradiance and difference combination parametric resonance in mode-locked laser

    Science.gov (United States)

    Bagayev, S. N.; Arkhipov, R. M.; Arkhipov, M. V.; Egorov, V. S.; Chekhonin, I. A.; Chekhonin, M. A.

    2017-11-01

    The generation of the ring mode-locked laser containing resonant absorption medium in the cavity was investigated. It is shown that near the strong resonant absorption lines a condensation of polaritons arises. Intensive radiation looks like as superradiance in a medium without population inversion. We studied theoretically the microscopic mechanism of these phenomena. It was shown that in this system in absorbing medium a strong self-induced difference combination parametric resonance exists. Superradiance on polaritonic modes in the absorbing medium are due to the emergence of light-induced resonant polarization as a result of fast periodic nonadiabatic quantum jumps in the absorber.

  13. Raman-Assisted Passively Mode-Locked Fiber Laser

    Science.gov (United States)

    Zhao, Lei; Yao, Pei-Jun; Gu, Chun; Xu, Li-Xin

    2018-04-01

    Not Available Supported by the National Natural Science Foundation of China under Grant No 61675188, and the Open Fund of Key Laboratory Pulse Power Laser Technology of China under Grant No SKL2016KF03.

  14. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  15. Multiple-Pulse Operation and Bound States of Solitons in Passive Mode-Locked Fiber Lasers

    Directory of Open Access Journals (Sweden)

    A. Komarov

    2012-01-01

    Full Text Available We present results of our research on a multiple-pulse operation of passive mode-locked fiber lasers. The research has been performed on basis of numerical simulation. Multihysteresis dependence of both an intracavity energy and peak intensities of intracavity ultrashort pulses on pump power is found. It is shown that the change of a number of ultrashort pulses in a laser cavity can be realized by hard as well as soft regimes of an excitation and an annihilation of new solitons. Bound steady states of interacting solitons are studied for various mechanisms of nonlinear losses shaping ultrashort pulses. Possibility of coding of information on basis of soliton trains with various bonds between neighboring pulses is discussed. The role of dispersive wave emitted by solitons because of lumped intracavity elements in a formation of powerful soliton wings is analyzed. It is found that such powerful wings result in large bounding energies of interacting solitons in steady states. Various problems of a soliton interaction in passive mode-locked fiber lasers are discussed.

  16. Experimental demonstration of an Er-doped fiber ring laser mode-locked with a Tm–Ho co-doped fiber saturable absorber

    International Nuclear Information System (INIS)

    Tao, Mengmeng; Wu, Junjie; Wu, Yong; Yang, Pengling; Ye, Xisheng; Peng, Junsong

    2013-01-01

    Mode-locking operation of an Er-doped fiber laser with a Tm–Ho co-doped fiber saturable absorber is demonstrated for the first time. Q-switching, Q-switched mode-locking and CW mode-locking operation modes are observed sequentially with increase of the pump power. In the mode-locking operation mode, a repetition rate at the fundamental cavity frequency of 9.05 MHz is obtained with a pulse duration of 46.3 ns. By rotating the polarization controller, a repetition rate up to 887 MHz is achieved, and the pulse duration is shortened to 0.548 ns. (paper)

  17. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  18. Passive mode-locking dynamics in a 3.1GHz quantum dot laser diode operating around 1.5μm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2010-01-01

    We report on passive mode-locking in a 3.1GHz InAs/InP(100) quantum dot laser diode operating around 1.5µm. The range of stable passive mode-locking, detailed measurements of the linewidth of the optical modes and the phase modulation in output pulses are presented.

  19. Electronic control of different generation regimes in mode-locked all-fibre F8 laser

    Science.gov (United States)

    Kobtsev, Sergey; Ivanenko, Aleksey; Kokhanovskiy, Alexey; Smirnov, Sergey

    2018-04-01

    We demonstrate for the first time an electronically controlled realisation of markedly different generation regimes in a mode-locked all-fibre figure-eight (F8) Yb-doped laser. Electronic adjustment of the ratio of pumping powers of two amplification stages in a nonlinear amplifying loop mirror enables the establishment of stable pulse generation regimes with different degrees of coherence and control over their parameters within relatively broad limits, with the pulse duration range exceeding a factor of two in the picosecond domain for coherent and incoherent pulses, the energy range exceeding an order of magnitude for incoherent pulses (2.2-24.8 nJ) and over a factor of 8 for coherent pulses (1.9-16.2 nJ). Adjustment of the pumping powers allows one to maintain the duration of the coherent pulses and to set their peak power in the range of 32.5-292.5 W. The proposed configuration of electronic control over the radiation parameters of a mode-locked all-fibre F8 laser enables reproducible generation of pulses of different types with specified parameters within a broad range of values.

  20. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

    2018-03-01

    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  1. 5-GHz passively mode-locked quantum dot ring laser diode at 1.5 μm

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2008-01-01

    In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 µm. The device consists of an 18-mm long (electrically pumped) ring cavity, corresponding to a 5-GHz roundtrip frequency. The waveguide width is 2 µm. A

  2. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

    Science.gov (United States)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

    2018-04-01

    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  3. Dual wavelength Mode-Locking of InAs/InP quantum dot laser diodes at 1.5µm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2011-01-01

    We report on stable dual-wavelength mode-locking of 3.1GHz and 10GHz two-section InAs/InP(100) quantum dot laser diodes. Evaluation of relative time delay between different spectral components indicates opposite sign of chirp over the two spectral lobes

  4. Compact 84 GHz passive mode-locked fiber laser using dual-fiber coupled fused-quartz microresonator

    Science.gov (United States)

    Liu, Tze-An; Hsu, Yung; Chow, Chi-Wai; Chuang, Yi-Chen; Ting, Wei-Jo; Wang, Bo-Chun; Peng, Jin-Long; Chen, Guan-Hong; Chang, Yuan-Chia

    2017-10-01

    We propose and demonstrate a compact and portable-size 84-GHz passive mode-locked fiber laser, in which a dual-fiber coupled fused-quartz microresonator is employed as the intracavity optical comb filter as well as the optical nonlinear material for optical frequency comb generation. About eight coherent optical tones can be generated in the proposed fiber laser. The 20-dB bandwidth is larger than 588 GHz. The full-width half-maximum pulse-width of the proposed laser is 2.5 ps. We also demonstrate the feasibility of using the proposed passive mode-locked fiber laser to carry a 5-Gbit/s on-off-keying signal and transmit over 20-km standard single mode fiber. A 7% forward error correction requirement can be achieved, showing the proposed fiber laser can be a potential candidate for fiber-wireless applications.

  5. Diode-Pumped Mode-Locked LiSAF Laser; FINAL

    International Nuclear Information System (INIS)

    None

    1996-01-01

    Under this contract we have developed Cr(sup 3+):LiSrAlF(sub 6) (Cr:LiSAF, LiSAF) mode-locked lasers suitable for generation of polarized electrons for CEBAF. As 670 nm is an excellent wavelength for optical pumping of Cr:LiSAF, we have used a LIGHTWAVE developed 670 nm diode pump module that combines the output of ten diode lasers and yields approximately 2 Watts of optical power. By the use of a diffraction limited pump beam however, it is possible to maintain a small mode size through the length of the crystal and hence extract more power from Cr:LiSAF laser. For this purpose we have developed a 1 Watt, red 660nm laser (LIGHTWAVE model 240R) which serves as an ideal pump for Cr:LiSAF and is a potential replacement of costly and less robust krypton laser. This new system is to compliment LIGHTWAVE Series 240, and is currently being considered for commercialization. Partially developed under this contract is LIGHTWAVEs product model 240 which has already been in our production lines for a few months and is commercially available. This laser produces 2 Watts of output at 532 nm using some of the same technology developed for production of the 660nm red system. It is a potential replacement for argon ion lasers and has better current and cooling requirements and is an excellent pump source for Ti:Al(sub 2)O(sub 3). Also, as a direct result of this contract we now have the capability of commercially developing a mode-locked 100MHz Cr:LiSAF system. Such a laser could be added to our 100 MHz LIGHTWAVE Series 131. The Series 131 lasers provide pico second pulses and were originally developed under another DOE SBIR. Both models of LIGHTWAVE Series 240 lasers, the fiber coupled pump module and the 100MHz LiSAF laser of Series 131 have been partially developed under this contract, and are commercially competitive products

  6. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  7. Passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm

    Science.gov (United States)

    Waritanant, Tanant; Major, Arkady

    2018-02-01

    A passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm was demonstrated with an intracavity birefringent filter as the wavelength selecting element. The average output powers achieved were 2.17 W and 2.18 W with optical-to-optical efficiency of 19.6% and 19.7%, respectively. The slope efficiencies were more than 31% at both output wavelengths. The pulse durations at the highest average output power were 10.3 ps and 8.4 ps, respectively. We believe that this is the first report of mode locking of a Nd:YVO4 laser operating at 1073 nm or 1085 nm lines.

  8. Study on guided waves in semiconductor lasers

    International Nuclear Information System (INIS)

    Pudensi, M.A.A.

    1980-01-01

    In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

  9. Generation of bound states of pulses in a SESAM mode-locked Cr:ZnSe laser

    Science.gov (United States)

    Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

    2018-06-01

    We report on the generation of bound states of pulses in a SESAM mode-locked Cr:ZnSe laser around 2415 nm. A thulium-doped double-clad fiber laser at 1908 nm was used as the pump source. Bound states with various pulse separations at different dispersion regimes were obtained. Especially, in the anomalous dispersion regime, vibrating bound state of solitons exhibiting an evolving phase was obtained.

  10. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  11. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  12. Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2009-01-01

    Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 µm is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values of

  13. Wavelength-stepped, actively mode-locked fiber laser based on wavelength-division-multiplexed optical delay lines

    Science.gov (United States)

    Lee, Eunjoo; Kim, Byoung Yoon

    2017-12-01

    We propose a new scheme for an actively mode-locked wavelength-swept fiber laser that produces a train of discretely wavelength-stepped pulses from a short fiber cavity. Pulses with different wavelengths are split and combined by standard wavelength division multiplexers with fiber delay lines. As a proof of concept, we demonstrate a laser using an erbium doped fiber amplifier and commercially available wavelength-division multiplexers with wavelength spacing of 0.8 nm. The results show simultaneous mode-locking at three different wavelengths. Laser output parameters in time domain, optical and radio frequency spectral domain, and the noise characteristics are presented. Suggestions for the improved design are discussed.

  14. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Donin, V I; Yakovin, D V; Gribanov, A V [Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-12-31

    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses. (control of laser radiation parameters)

  15. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  16. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  17. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  18. Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser

    Science.gov (United States)

    Tu, Meirong; McKee, Michael R.; Pak, Kyung S.; Yu, Nan

    2010-01-01

    The figure schematically depicts a laboratory setup for determining the optical length of a fiber-optic delay line at a precision greater than that obtainable by use of optical time-domain reflectometry or of mechanical measurement of length during the delay-line-winding process. In this setup, the delay line becomes part of the resonant optical cavity that governs the frequency of oscillation of a mode-locked laser. The length can then be determined from frequency-domain measurements, as described below. The laboratory setup is basically an all-fiber ring laser in which the delay line constitutes part of the ring. Another part of the ring - the laser gain medium - is an erbium-doped fiber amplifier pumped by a diode laser at a wavelength of 980 nm. The loop also includes an optical isolator, two polarization controllers, and a polarizing beam splitter. The optical isolator enforces unidirectional lasing. The polarization beam splitter allows light in only one polarization mode to pass through the ring; light in the orthogonal polarization mode is rejected from the ring and utilized as a diagnostic output, which is fed to an optical spectrum analyzer and a photodetector. The photodetector output is fed to a radio-frequency spectrum analyzer and an oscilloscope. The fiber ring laser can generate continuous-wave radiation in non-mode-locked operation or ultrashort optical pulses in mode-locked operation. The mode-locked operation exhibited by this ring is said to be passive in the sense that no electro-optical modulator or other active optical component is used to achieve it. Passive mode locking is achieved by exploiting optical nonlinearity of passive components in such a manner as to obtain ultra-short optical pulses. In this setup, the particular nonlinear optical property exploited to achieve passive mode locking is nonlinear polarization rotation. This or any ring laser can support oscillation in multiple modes as long as sufficient gain is present to overcome

  19. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  20. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

    DEFF Research Database (Denmark)

    Klaime, K.; Piron, R.; Grillot, F.

    2013-01-01

    This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers......) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports...... for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show...

  1. Adaptation to the edge of chaos in a self-starting Kerr-lens mode-locked laser

    Science.gov (United States)

    Hsu, C. C.; Lin, J. H.; Hsieh, W. F.

    2009-08-01

    We experimentally and numerically demonstrated that self-focusing acts as a slow-varying control parameter that suppresses the transient chaos to reach a stable mode-locking (ML) state in a self-starting Kerr-lens mode-locked Ti:sapphire laser without external modulation and feedback control. Based on Fox-Li’s approach, including the self-focusing effect, the theoretical simulation reveals that the self-focusing effect is responsible for the self-adaptation. The self-adaptation occurs at the boundary between the chaotic and continuous output regions in which the laser system begins with a transient chaotic state with fractal correlation dimension, and then evolves with reducing dimension into the stable ML state.

  2. Teradiode's high brightness semiconductor lasers

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  3. Mode-locking operation of a flash-lamp-pumped Nd:YAG laser at 1.064 μm with Zakharov-Manakov solitons

    International Nuclear Information System (INIS)

    Andreana, M; Tonello, A; Couderc, V; Baronio, F; Conforti, M; De Angelis, C

    2011-01-01

    We report experimental results on the mode-locked operation of a flash-lamp-pumped Nd:YAG laser at 1.064 μm. The KTP crystal, which induces passive mode-locking, exploits the existence and properties of spatial Zakharov-Manakov soliton dynamics. A train of pulses with duration close to 100 ps, repetition rate of 136 MHz and modulation depth almost 100% has been produced. The mode-locked pulses are modulated with a longer 180 ns pulse envelope with repetition rate of 10 Hz

  4. Mid-infrared supercontinuum generation in tapered ZBLAN fiber with a standard Erbium mode-locked fiber laser

    DEFF Research Database (Denmark)

    Kubat, Irnis; Moselund, Peter M.; Bang, Ole

    2013-01-01

    to generate a broadband SC using direct pumping with commercially available Erbium (Er) mode-locked fiber lasers at 1550 nm. Formation of SC is manipulated both in the UV and IR by changing the fiber dispersion and nonlinearity using tapers. This has been much studied in various silica fiber designs...... and is now also becoming used in ZBLAN [2], and other soft glasses such as chalcogenide [3] and tellurite [4]. The aim of this nummerical work is to show how pumping tapered commercially available ZBLAN fibers with an Er mode-locked fiber laser can generate a broadband SC approaching the ZBLAN long....... commercially available), core diameter Dc=7 μm, and ZDW=1.5 μm, is pumped with TFWHM=10 ps and P0=10 kW pulses from an Er mode-locked laser with a 40 MHz repetition rate and 4W average power. The resulting MIR SC seen in Fig. 1(b) is based on Modulation Instability breakup of the pump pulse, which generates...

  5. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  6. Mode-locked ytterbium fiber lasers using a large modulation depth carbon nanotube saturable absorber without an additional spectral filter

    International Nuclear Information System (INIS)

    Pan, Y Z; Miao, J G; Liu, W J; Huang, X J; Wang, Y B

    2014-01-01

    We demonstrate an all-normal-dispersion ytterbium (Yb)-doped fiber laser mode-locked by a higher modulation depth carbon nanotube saturable absorber (CNT-SA) based on an evanescent field interaction scheme. The laser cavity consists of pure normal dispersion fibers without dispersion compensation and an additional spectral filter. It is exhibited that the higher modulation depth CNT-SA could contribute to stabilize the mode-locking operation within a limited range of pump power and generate the highly chirped pulses with a high-energy level in the cavity with large normal dispersion and strong nonlinearity. Stable mode-locked pulses with a maximal energy of 29 nJ with a 5.59 MHz repetition rate at the operating wavelength around 1085 nm have been obtained. The maximal time-bandwidth product is 262.4. The temporal and spectral characteristics of pulses versus pump power are demonstrated. The experimental results suggest that the CNT-SA provides a sufficient nonlinear loss to compensate high nonlinearity and catch up the gain at a different pump power and thus leads to the stable mode locking. (letter)

  7. 256 fs, 2 nJ soliton pulse generation from MoS2 mode-locked fiber laser

    Science.gov (United States)

    Jiang, Zike; Chen, Hao; Li, Jiarong; Yin, Jinde; Wang, Jinzhang; Yan, Peiguang

    2017-12-01

    We demonstrate an Er-doped fiber laser (EDFL) mode-locked by a MoS2 saturable absorber (SA), delivering a 256 fs, 2 nJ soliton pulse at 1563.4 nm. The nonlinear property of the SA prepared by magnetron sputtering deposition (MSD) is measured with a modulation depth (MD) of ∼19.48% and a saturable intensity of 4.14 MW/cm2. To the best of our knowledge, the generated soliton pulse has the highest pulse energy of 2 nJ among the reported mode-locked EDFLs based on transition metal dichalcogenides (TMDs). Our results indicate that MSD-grown SAs could offer an exciting platform for high pulse energy and ultrashort pulse generation.

  8. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    1999-01-01

    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  9. Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

    International Nuclear Information System (INIS)

    Lin, Y-H; Lin, G-R

    2012-01-01

    The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

  10. Compact and high repetition rate Kerr-lens mode-locked 532 nm Nd:YVO4 laser

    International Nuclear Information System (INIS)

    Li, Zuohan; Peng, Jiying; Yuan, Ruixia; Yao, Jianquan; Zheng, Yi; Wang, Tongtong

    2015-01-01

    A compact and feasible CW Kerr-lens-induced mode-locked 532 nm Nd:YVO 4 laser system was experimentally demonstrated for the first time with theoretical analysis. Kerr-lens mode locking with intracavity second harmonic generation provides a promising method to generate a high-repetition-rate picosecond green laser. With an incident pump power of 6 W, the average output power of mode locking was 258 mW at a high repetition rate of 1.1 GHz. (paper)

  11. Q-switching and mode-locking in a diode-pumped frequency-doubled Nd : YAG laser

    International Nuclear Information System (INIS)

    Donin, Valerii I; Yakovin, Dmitrii V; Gribanov, A V

    2012-01-01

    A new method for obtaining Q-switching simultaneously with mode-locking using one travelling-wave acousto-optic modulator in a frequency-doubled Nd : YAG laser cavity is described. Further shortening of output laser pulses (from 40 to 3.25 ps) is achieved by forming a Kerr lens in the frequency-doubling crystal. At an average power of ∼ 2 W and a Q-switching rate of 2 kHz, the peak power of the stably operating reached ∼ 50 MW.

  12. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  13. Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

    International Nuclear Information System (INIS)

    Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

    2012-01-01

    We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

  14. Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

    Science.gov (United States)

    Link, S M; Maas, D J H C; Waldburger, D; Keller, U

    2017-06-16

    Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

  15. Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

    Science.gov (United States)

    Jornod, Nayara; Gürel, Kutan; Wittwer, Valentin J.; Brochard, Pierre; Hakobyan, Sargis; Schilt, Stéphane; Waldburger, Dominik; Keller, Ursula; Südmeyer, Thomas

    2018-02-01

    We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of 30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

  16. Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2010-01-01

    While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited output power, and the performance of high-speed Fourier domain mode-locked (FDML) lasers suffers from...

  17. Switchable Q-switched and modelocked operation in ytterbium doped fiber laser under all-normal-dispersion configuration

    Energy Technology Data Exchange (ETDEWEB)

    Mukhopadhyay, Pranb K., E-mail: pkm@rrcat.gov.in; Gupta, Pradeep K.; Singh, Chandra Pal; Singh, Amarjeet; Sharma, Sunil K.; Bindra, Kushvinder S.; Oak, Shrikant M. [Solid State Laser Division, Raja Ramanna Center for Advanced Technology, Indore, M.P. 452013 (India)

    2015-03-15

    We have constructed an Yb-doped fiber laser in all-normal-dispersion configuration which can be independently operated in Q-switched or modelocked configuration with the help of a simple fiber optic ring resonator (FORR). In the presence of FORR, the laser operates in Q-switched mode producing stable pulses in the range of 1 μs-200 ns with repetition rate in the range of 45 kHz-82 kHz. On the other hand, the laser can be easily switched to mode-locked operation by disjoining the FORR loop producing train of ultrashort pulses of ∼5 ps duration (compressible to ∼150 fs) at ∼38 MHz repetition rate. The transmission characteristics of FORR in combination with the nonlinear polarization rotation for passive Q-switching operation is numerically investigated and experimentally verified. The laser can serve as a versatile seed source for power amplifier which can be easily configured for application in the fields that require different pulsed fiber lasers.

  18. Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers.

    Science.gov (United States)

    Tahvili, M S; Du, L; Heck, M J R; Nötzel, R; Smit, M K; Bente, E A J M

    2012-03-26

    We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two lobes provide a coherent bandwidth and are verified to lead to two synchronized optical pulses. The generated optical pulses are elongated in time due to a chirp which shows opposite signs over the two spectral lobes. Self-induced mode-locking in the single-section laser shows that the dual-wavelength spectra correspond to emission from ground state. In the hybrid mode-locking regime, a map of locking range is presented by measuring the values of timing jitter for several values of power and frequency of the external electrical modulating signal. An overview of the systematic behavior of InAs/InP(100) quantum dot mode-locked lasers is presented as conclusion.

  19. An asymmetric integrated extended cavity 20GHz mode-locked quantum well ring laser fabricated in the JePPIX technology platform

    NARCIS (Netherlands)

    Tahvili, M.S.; Barbarin, Y.; Ambrosius, H.P.M.M.; Smit, M.K.; Bente, E.A.J.M.; Leijtens, X.J.M.; Vries, de T.; Smalbrugge, E.; Bolk, J.

    2011-01-01

    In this paper, we present mode-locked operation of a monolithic 20GHz integrated extended cavity ring laser. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section (SOA), a separate 40µm long saturable absorber (SA) section, passive waveguide sections (shallow and deep

  20. Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity

    Science.gov (United States)

    Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.

    2017-10-01

    The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

  1. Characterisation of the light pulses of a cavity dumped dye laser pumped by a cw mode-locked and q-switched Nd:YAG laser

    International Nuclear Information System (INIS)

    Geist, P.; Heisel, F.; Martz, A.; Miehe, J.A.; Miller, R.J.D.

    1984-01-01

    The frequency doubled pulses (of 532 nm) obtained, with the help of a KTP crystal, from those delivered by either a continuous wave mode-locked (100 MHz) or mode-locked Q-switched (0-1 KHz) Nd: YAG laser, are analyzed by means of a streak camera, operating in synchroscan or triggered mode. In the step-by-step measurements the pulse stability, concerning form and amplitude, is shown. In addition, measurements effectuated with synchronously pumped and cavity dumped dye laser (Rhodamine 6G), controlled by a Pockels cell, allows the obtention of stable and reproducible single pulses of 30 ps duration, 10 μJ energy and 500Hz frequency [fr

  2. E-beam-pumped semiconductor lasers

    Science.gov (United States)

    Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

    1995-04-01

    The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

  3. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  4. Asymmetrically excited semiconductor injection laser

    International Nuclear Information System (INIS)

    Ladany, I.; Marinelli, D.P.; Kressel, H.; Cannuli, V.M.

    1975-01-01

    A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region

  5. Semiconductor lasers in rheumatological treatment

    Science.gov (United States)

    Pascu, Mihail-Lucian; Suteanu, S.; Ignat, P.; Pruna, Simion; Chitu, A.

    1995-03-01

    A computer controlled equipment, containing 6 lasers (HeNe and 5 diode lasers--DL) conceived to be used in rheumatological treatment is reported. DL emit at 895 nm and for typical applications, their expanded spots are superposed within the irradiation plane, on the HeNE defocused spot used to define the surface to be irradiated. DL emit 100 nsec pulses between 0.5 KHz and 1.5 KHz repetition rate and 0.5 mW average power (measured at 1 KHz). 150 patients with rheumathologic diseases were treated: lumbar spondylosis (75), gonarthrosis (30), cervical spondylosis (21), coxarthrosis (15), Heberden and Bouchard (9). The treatment consisted of: group I, 50 patients--laser therapy, 10 min/day, 10 days; group II, 50 patients--classical antirheumatic treatment; group III, 50 patients--mixed treatment. Assessment of sympathetic skin activity made using reactometry measurements, shows that latency time was longer before irradiation, 1867 +/- 289) msec then after, (1234 +/- 321) msec. Pain rating indexes decreasing for all three groups of patients were measured. Better results for more superficial diseases were obtained and best results were observed after irradiation with 1 KHz - 1.5 KHz repetition rate IR pulses. Better results were obtained when spot irradiation in a few points combined with zone irradiations was used.

  6. Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 μm.

    Science.gov (United States)

    Lagatsky, A A; Calvez, S; Gupta, J A; Kisel, V E; Kuleshov, N V; Brown, C T A; Dawson, M D; Sibbett, W

    2011-05-09

    Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively. Optimised pulse durations of 386 fs were produced with an average power of 235 mW at 2029 nm. © 2011 Optical Society of America

  7. Optical double-locked semiconductor lasers

    Science.gov (United States)

    AlMulla, Mohammad

    2018-06-01

    Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

  8. Squeezing in an injection-locked semiconductor laser

    Science.gov (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

    1993-09-01

    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  9. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  11. Picosecond Laser Pulse Interactions with Metallic and Semiconductor Surfaces.

    Science.gov (United States)

    1984-11-01

    thermometric determination of plasma relaxation is by far more sensitive than direct optical measurements. The solid line in Fig. 4 shows the calculated...passively mode-locked Nd:yttrium aluminum garnet in Si, several researchers have used high picosecond or fem- laser was used to produce single 30-ps, 1.06...these targets to an aluminum backing plate with a silver-epoxy conducting glue (Ablestik). The conductivity of the targets was high enough to make

  12. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey

    2017-01-01

    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  13. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

    2014-01-01

    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  14. Real-time dual-comb spectroscopy with a free-running bidirectionally mode-locked fiber laser

    Science.gov (United States)

    Mehravar, S.; Norwood, R. A.; Peyghambarian, N.; Kieu, K.

    2016-06-01

    Dual-comb technique has enabled exciting applications in high resolution spectroscopy, precision distance measurements, and 3D imaging. Major advantages over traditional methods can be achieved with dual-comb technique. For example, dual-comb spectroscopy provides orders of magnitude improvement in acquisition speed over standard Fourier-transform spectroscopy while still preserving the high resolution capability. Wider adoption of the technique has, however, been hindered by the need for complex and expensive ultrafast laser systems. Here, we present a simple and robust dual-comb system that employs a free-running bidirectionally mode-locked fiber laser operating at telecommunication wavelength. Two femtosecond frequency combs (with a small difference in repetition rates) are generated from a single laser cavity to ensure mutual coherent properties and common noise cancellation. As the result, we have achieved real-time absorption spectroscopy measurements without the need for complex servo locking with accurate frequency referencing, and relatively high signal-to-noise ratio.

  15. Performance Comparison of Mode-Locked Erbium-Doped Fiber Laser with Nonlinear Polarization Rotation and Saturable Absorber Approaches

    International Nuclear Information System (INIS)

    Ismail, M. A.; Tan, S. J.; Shahabuddin, N. S.; Harun, S. W.; Arof, H.; Ahmad, H.

    2012-01-01

    A mode-locked erbium-doped fiber laser (EDFL) is demonstrated using a highly concentrated erbium-doped fiber (EDF) as the gain medium in a ring configuration with and without a saturable absorber (SA). Without the SA, the proposed laser generates soliton pulses with a repetition rate of 12 MHz, pulse width of 1.11 ps and energy pulse of 1.6 pJ. By incorporating SA in the ring cavity, the optical output of the laser changes from soliton to stretched pulses due to the slight change in the group velocity dispersion. With the SA, a cleaner pulse is obtained with a repetition rate of 11.3 MHz, a pulse width of 0.58 ps and a pulse energy of 2.3 pJ. (fundamental areas of phenomenology(including applications))

  16. Mode-Locked Multichromatic X-Rays in a Seeded Free-Electron Laser for Single-Shot X-Ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Dao; Ding, Yuantao; Raubenheimer, Tor; Wu, Juhao; /SLAC

    2012-05-10

    We present the promise of generating gigawatt mode-locked multichromatic x rays in a seeded free-electron laser (FEL). We show that, by using a laser to imprint periodic modulation in electron beam phase space, a single-frequency coherent seed can be amplified and further translated to a mode-locked multichromatic output in an FEL. With this configuration the FEL output consists of a train of mode-locked ultrashort pulses which span a wide frequency gap with a series of equally spaced sharp lines. These gigawatt multichromatic x rays may potentially allow one to explore the structure and dynamics of a large number of atomic states simultaneously. The feasibility of generating mode-locked x rays ranging from carbon K edge ({approx}284 eV) to copper L{sub 3} edge ({approx}931 eV) is confirmed with numerical simulation using the realistic parameters of the linac coherent light source (LCLS) and LCLS-II. We anticipate that the mode-locked multichromatic x rays in FELs may open up new opportunities in x-ray spectroscopy (i.e. resonant inelastic x-ray scattering, time-resolved scattering and spectroscopy, etc.).

  17. Repetition frequency scaling of an all-polarization maintaining erbium-doped mode-locked fiber laser based on carbon nanotubes saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Jagiello, J.; Lipinska, L. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

    2015-04-07

    We demonstrate an all-polarization maintaining (PM), mode-locked erbium (Er)-doped fiber laser based on a carbon nanotubes (CNT) saturable absorber (SA). The laser resonator was maximally simplified by using only one passive hybrid component and a pair of fiber connectors with deposited CNTs. The repetition frequency (F{sub rep}) of such a cost-effective and self-starting mode-locked laser was scaled from 54.3 MHz to 358.6 MHz. The highest F{sub rep} was obtained when the total cavity length was shortened to 57 cm. The laser allows ultrashort pulse generation with the duration ranging from 240 fs to 550 fs. Because the laser components were based on PM fibers the laser was immune to the external perturbations and generated laniary polarized light with the degree of polarization (DOP) of 98.7%.

  18. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

    Science.gov (United States)

    Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

    2017-07-01

    We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

  19. Melting phenomenon and laser annealing in semiconductors

    International Nuclear Information System (INIS)

    Narayan, J.

    1981-03-01

    The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

  20. Femtosecond mode-locked erbium-doped fiber laser based on MoS2-PVA saturable absorber

    Science.gov (United States)

    Ahmed, M. H. M.; Latiff, A. A.; Arof, H.; Ahmad, H.; Harun, S. W.

    2016-08-01

    We fabricate a free-standing few-layer molybdenum disulfide (MoS2)-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a soliton mode-locked Erbium-doped fiber laser (EDFL). A stable self-started mode-locked soliton pulse is generated by fine-tuning the rotation of the polarization controller at a low threshold pump power of 25 mW. Its solitonic behavior is verified by the presence of Kelly sidebands in the output spectrum. The central wavelength, pulse width, and repetition rate of the laser are 1573.7 nm, 630 fs, and 27.1 MHz, respectively. The maximum pulse energy is 0.141 nJ with peak power of 210 W at pump power of 170 mW. This result contributes to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.

  1. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.

    2012-01-01

    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  2. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm

    NARCIS (Netherlands)

    Heck, M.J.R.; Salumbides, E.J.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Veldhoven, van P.J.; Nötzel, R.; Eikema, K.S.E.; Ubachs, W.

    2009-01-01

    For the first time a detailed study of hybrid mode-locking in two- section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase

  3. Tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation

    International Nuclear Information System (INIS)

    Luo, A-P; Luo, Z-C; Xu, W-C; Dvoyrin, V V; Mashinsky, V M; Dianov, E M

    2011-01-01

    We demonstrate a tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser by using nonlinear polarization rotation (NPR) technique. Exploiting the spectral filtering effect caused by the combination of the polarizer and intracavity birefringence, the wavelength separation of dual-wavelength mode-locked pulses can be flexibly tuned between 2.38 and 20.45 nm. Taking the advantage of NPR-induced intensity-dependent loss to suppress the mode competition, the stable dual-wavelength pulses output is obtained at room temperature. Moreover, the dual-wavelength switchable operation is achieved by simply rotating the polarization controllers (PCs)

  4. Ultrafast spectral dynamics of dual-color-soliton intracavity collision in a mode-locked fiber laser

    Science.gov (United States)

    Wei, Yuan; Li, Bowen; Wei, Xiaoming; Yu, Ying; Wong, Kenneth K. Y.

    2018-02-01

    The single-shot spectral dynamics of dual-color-soliton collisions inside a mode-locked laser is experimentally and numerically investigated. By using the all-optically dispersive Fourier transform, we spectrally unveil the collision-induced soliton self-reshaping process, which features dynamic spectral fringes over the soliton main lobe, and the rebuilding of Kelly sidebands with wavelength drifting. Meanwhile, the numerical simulations validate the experimental observation and provide additional insights into the physical mechanism of the collision-induced spectral dynamics from the temporal domain perspective. It is verified that the dynamic interference between the soliton and the dispersive waves is responsible for the observed collision-induced spectral evolution. These dynamic phenomena not only demonstrate the role of dispersive waves in the sophisticated soliton interaction inside the laser cavity, but also facilitate a deeper understanding of the soliton's inherent stability.

  5. Experimental investigations of pulse shape control in passively mode-locked fiber lasers with net-normal dispersion

    International Nuclear Information System (INIS)

    Wang, L R; Han, D D

    2013-01-01

    Pulse shape control in passively mode-locked fiber lasers with net-normal dispersion is investigated experimentally. Three kinds of pulses with different spectral and temporal shapes are observed, and their pulse-shaping mechanisms are discussed. After a polarization-resolved system external to the cavity, the maximum intensity differences of the two polarization components for the rectangular-spectrum (RS), Gaussian-spectrum (GS), and super-broadband (SB) pulses are measured as ∼20 dB, ∼15 dB, and ∼1 dB, respectively. It is suggested that the equivalent saturable absorption effect plays an increasingly important role from the RS to GS and then to SB pulses in the pulse-shaping processes, while the spectral filtering effect declines. This work could help in systematically understanding pulse formation and proposing guidelines for the realization of pulses with better performance in fiber lasers. (paper)

  6. 1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

    Energy Technology Data Exchange (ETDEWEB)

    Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany); Franke, D.; Kreissl, J.; Künzel, H. [Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin (Germany)

    2015-01-19

    Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.

  7. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

    International Nuclear Information System (INIS)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Lai, Yin-Chieh; Yeh, Chien-Hung; Tsang, Hon-Ki

    2016-01-01

    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism. (letter)

  8. 1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

    International Nuclear Information System (INIS)

    Sadeev, T.; Arsenijević, D.; Bimberg, D.; Franke, D.; Kreissl, J.; Künzel, H.

    2015-01-01

    Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning

  9. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  10. Soliton rains in a graphene-oxide passively mode-locked ytterbium-doped fiber laser with all-normal dispersion

    International Nuclear Information System (INIS)

    Huang, S S; Yan, P G; Zhang, G L; Zhao, J Q; Li, H Q; Lin, R Y; Wang, Y G

    2014-01-01

    We experimentally investigated soliton rains in an ytterbium-doped fiber (YDF) laser with a net normal dispersion cavity using a graphene-oxide (GO) saturable absorber (SA). The 195 m-long-cavity, the fiber birefringence filter and the inserted 2.5 nm narrow bandwidth filter play important roles in the formation of the soliton rains. The soliton rain states can be changed by the effective gain bandwidth of the laser. The experimental results can be conducive to an understanding of dissipative soliton features and mode-locking dynamics in all-normal dispersion fiber lasers with GOSAs. To the best of our knowledge, this is the first demonstration of soliton rains in a GOSA passively mode-locked YDF laser with a net normal dispersion cavity. (letter)

  11. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

    1999-01-01

    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

  12. Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

    2015-12-15

    Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  14. Real-time full-field characterization of transient dissipative soliton dynamics in a mode-locked laser

    Science.gov (United States)

    Ryczkowski, P.; Närhi, M.; Billet, C.; Merolla, J.-M.; Genty, G.; Dudley, J. M.

    2018-04-01

    Dissipative solitons are remarkably localized states of a physical system that arise from the dynamical balance between nonlinearity, dispersion and environmental energy exchange. They are the most universal form of soliton that can exist, and are seen in far-from-equilibrium systems in many fields, including chemistry, biology and physics. There has been particular interest in studying their properties in mode-locked lasers, but experiments have been limited by the inability to track the dynamical soliton evolution in real time. Here, we use simultaneous dispersive Fourier transform and time-lens measurements to completely characterize the spectral and temporal evolution of ultrashort dissipative solitons as their dynamics pass through a transient unstable regime with complex break-up and collisions before stabilization. Further insight is obtained from reconstruction of the soliton amplitude and phase and calculation of the corresponding complex-valued eigenvalue spectrum. These findings show how real-time measurements provide new insights into ultrafast transient dynamics in optics.

  15. Mode-locked thin-disk lasers and their potential application for high-power terahertz generation

    Science.gov (United States)

    Saraceno, Clara J.

    2018-04-01

    The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

  16. Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers

    Science.gov (United States)

    Feng, Tao; Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; Wang, Meng; Belenky, Gregory

    2018-02-01

    Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched 5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section ( 300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.

  17. Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

    Science.gov (United States)

    Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

    2016-08-15

    The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

  18. Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm.

    Science.gov (United States)

    Barbarin, Yohan; Bente, Erwin A J M; Heck, Martijn J R; Oei, Y S; Nötzel, Richard; Smit, Meint K

    2006-10-16

    We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz - 80 MHz), which is low for an all-active device using bulk material and due to the ring configuration. Measured output pulses are highly chirped, a FWHM bandwidth is obtained of up to 4.5 nm. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for OCDMA applications.

  19. The astigmatism factor for semiconductor injection lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang; Guo Changzhi

    1988-03-01

    The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

  20. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    International Nuclear Information System (INIS)

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  1. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  2. Narrow-band modulation of semiconductor lasers at millimeter wave frequencies (7100 GHz) by mode locking

    International Nuclear Information System (INIS)

    Lau, K.Y.

    1990-01-01

    This paper reports on the possibility of mode locking a semiconductor laser at millimeter wave frequencies approaching and beyond 100 GHz which was investigated theoretically and experimentally. It is found that there are no fundamental theoretical limitations in mode locking at frequencies below 100 GHz. AT these high frequencies, only a few modes are locked and the output usually takes the form of a deep sinusoidal modulation which is synchronized in phase with the externally applied modulation at the intermodal heat frequency. This can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier over a narrow band at millimeter wave frequencies. Both active and passive mode locking are theoretically possible. Experimentally, predictions on active mode locking have been verified in prior publications up to 40 GHz. For passive mode locking, evidence consistent with passive mode locking was observed in an inhomogeneously pumped GaAIAs laser at a frequency of approximately 70 GHz. A large differential gain-absorption ratio such as that present in an inhomogeneously pumped single quantum well laser is necessary for pushing the passive mode-locking frequency beyond 100 GHz

  3. Unidirectional, dual-comb lasing under multiple pulse formation mechanisms in a passively mode-locked fiber ring laser

    Science.gov (United States)

    Liu, Ya; Zhao, Xin; Hu, Guoqing; Li, Cui; Zhao, Bofeng; Zheng, Zheng

    2016-09-01

    Dual-comb lasers from which asynchronous ultrashort pulses can be simultaneously generated have recently become an interesting research subject. They could be an intriguing alternative to the current dual-laser optical-frequency-comb source with highly sophisticated electronic control systems. If generated through a common light path traveled by all pulses, the common-mode noises between the spectral lines of different pulse trains could be significantly reduced. Therefore, coherent dual-comb generation from a completely common-path, unidirectional lasing cavity would be an interesting territory to explore. In this paper, we demonstrate such a dual-comb lasing scheme based on a nanomaterial saturable absorber with additional pulse narrowing and broadening mechanisms concurrently introduced into a mode-locked fiber laser. The interactions between multiple soliton formation mechanisms result in unusual bifurcation into two-pulse states with quite different characteristics. Simultaneous oscillation of pulses with four-fold difference in pulsewidths and tens of Hz repetition rate difference is observed. The coherence between these spectral-overlapped, picosecond and femtosecond pulses is further verified by the corresponding asynchronous cross-sampling and dual-comb spectroscopy measurements.

  4. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  5. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  6. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  7. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  8. High Power Mid-IR Semiconductor Lasers for LADAR

    National Research Council Canada - National Science Library

    Lester, Luke

    2003-01-01

    The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

  9. Nonlinear Polarization Rotation-Based Mode-Locked Erbium-Doped Fiber Laser with Three Switchable Operation States

    International Nuclear Information System (INIS)

    Tiu Zian Cheak; Tan Sin Jin; Zarei Arman; Ahmad Harith; Harun Sulaiman Wadi

    2014-01-01

    A simple mode-locked erbium-doped fiber laser (EDFL) with three switchable operation states is proposed and demonstrated based on nonlinear polarization rotation. The EDFL generates a stable square pulse at a third harmonic pulse repetition rate of 87 kHz as the 1480 nm pump power increases from the threshold of 17.5 mW to 34.3 mW. The square pulse duration increases from 105 ns to 245 ns as the pump power increases within this region. The pulse operation switches to the second operation state as the pump power is varied from 48.2 mW to 116.7 mW. The laser operates at a fundamental repetition rate of 29 kHz with a fixed pulse width of 8.5 μs within the pump power region. At a pump power of 116.7 mW, the average output power is 3.84 mW, which corresponds to the pulse energy of 131.5 nJ. When the pump power continues to increase, the pulse train experiences unstable oscillation before it reaches the third stable operation state within a pump power region of 138.9 mW to 145.0 mW. Within this region, the EDFL produces a fixed pulse width of 2.8 μs and a harmonic pulse repetition rate of 58 kHz. (fundamental areas of phenomenology(including applications))

  10. Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

    Directory of Open Access Journals (Sweden)

    Martijn J.R. Heck

    2015-09-01

    Full Text Available A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.

  11. Femtosecond all-polarization-maintaining fiber laser operating at 1028 nm

    DEFF Research Database (Denmark)

    Olsson, R.K.; Andersen, T.V.; Leick, Lasse

    2008-01-01

    We present an effective solution for an all-polarization-maintaining modelocked femtosecond fiber laser operating at the central wavelength of 1028 nm. The laser is based on an Yb-doped active fiber. Modelocking is enabled by a semiconductor saturable absorber mirror, and the central wavelength i...... is enforced by a fiber Bragg grating. The laser is self-starting and demonstrates excellent stability gainst Q-switching. Pulse energies reach 13 nJ at 34 MHz repetition rate. External compression leads to near transform-limited pulses of 140 fs.......We present an effective solution for an all-polarization-maintaining modelocked femtosecond fiber laser operating at the central wavelength of 1028 nm. The laser is based on an Yb-doped active fiber. Modelocking is enabled by a semiconductor saturable absorber mirror, and the central wavelength...

  12. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  13. Hybrid organic semiconductor lasers for bio-molecular sensing.

    Science.gov (United States)

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  14. Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

    Science.gov (United States)

    Dyksik, Mateusz; Motyka, Marcin; Kurka, Marcin; Ryczko, Krzysztof; Misiewicz, Jan; Schade, Anne; Kamp, Martin; Höfling, Sven; Sęk, Grzegorz

    2017-11-01

    Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

  15. Femtosecond Carrier Dynamics and Modelocking in Monolithic CPM Lasers. [SB1

    DEFF Research Database (Denmark)

    Brorson, S.D.; Bischoff, Svend; MØrk, J.

    1996-01-01

    Femtosecond pump-probe measurements of the dynamics in both forward- and reverse-biased semiconductor optical waveguides arepresented. Slow (nanosecond) as well as ultrafast (femtosecond) dynamics are observed in both kinds of structures....

  16. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann

    2004-01-01

    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

  17. 50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror

    Science.gov (United States)

    Naganuma, Kazunori; Mogi, Kazuo

    1991-05-01

    50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

  18. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

    2018-05-01

    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  19. Driver circuit for pulse modulation of a semiconductor laser

    International Nuclear Information System (INIS)

    Ueki, A.

    1975-01-01

    A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

  20. Kerr-Lens Mode-Locked Femtosecond Yb:GdYSiO5 Laser Directly Pumped by a Laser Diode

    Directory of Open Access Journals (Sweden)

    Jiangfeng Zhu

    2015-10-01

    Full Text Available We demonstrate the first Kerr-lens mode-locked operation in a diode-pumped Yb:GdYSiO5 oscillator. Under a diode pump power of 5 W, 141 fs pulses with an average power of 237 mW were obtained at a repetition rate of 118 MHz. The central wavelength was at 1094 nm with a bandwidth of 10.1 nm. Shorter pulses were obtained by adjusting the cavity to operate at a shorter wavelength, resulting in 55 fs pulse duration at the central wavelength of 1054 nm with a bandwidth of 23.5 nm.

  1. Observation of stable bound soliton with dual-wavelength in a passively mode-locked Er-doped fiber laser

    International Nuclear Information System (INIS)

    Zheng Yu; Tian Jin-Rong; Dong Zi-Kai; Xu Run-Qin; Li Ke-Xuan; Song Yan-Rong

    2017-01-01

    A phase-locked bound state soliton with dual-wavelength is observed experimentally in a passively mode-locked Er-doped fiber (EDF) laser with a fiber loop mirror (FLM). The pulse duration of the soliton is 15 ps and the peak-to-peak separation is 125 ps. The repetition rate of the pulse sequence is 3.47 MHz. The output power is 11.8 mW at the pump power of 128 mW, corresponding to the pulse energy of 1.52 nJ. The FLM with a polarization controller can produce a comb spectrum, which acts as a filter. By adjusting the polarization controller or varying the pump power, the central wavelength of the comb spectrum can be tuned. When it combines with the reflective spectrum of the fiber Bragg grating, the total spectrum of the cavity can be cleaved into two parts, then the bound state soliton with dual-wavelength at 1549.7 nm and 1550.4 nm is obtained. (paper)

  2. Generation of Q-Switched Mode-Locked Erbium-Doped Fiber Laser Operating in Dark Regime

    International Nuclear Information System (INIS)

    Tiu, Zian Cheak; Zarei, Arman; Ahmad, Harith; Harun, Sulaiman Wadi

    2016-01-01

    We demonstrate a stable Q-switched mode-locked erbium-doped fiber laser (EDFL) operating in dark regime based on the nonlinear polarization rotation technique. The EDFL produces a pulse train where the Q-switching envelope is formed by multiple dark pulses. The repetition rate of the Q-switched envelope can be increased from 0.96 kHz to 3.26 kHz, whereas the pulse width reduces from 211 μs to 86 μs. The highest pulse of 479 nJ is obtained at the pump power of 55 mW. It is also observed that the dark pulses inside the Q-switching envelope consist of two parts: square and trailing dark pulses. The shortest pulse width of the dark square pulse is obtained at 40.5 μs when the pump power is fixed at 145 mW. The repetition rate of trailing dark pulses can be increased from 27.62 kHz to 50 kHz as the pump power increases from 55 mW to 145 mW. (paper)

  3. Direct solar pumping of semiconductor lasers: A feasibility study

    Science.gov (United States)

    Anderson, Neal G.

    1992-01-01

    This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

  4. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le

    2010-01-01

    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  5. Semiconductor laser multi-spectral sensing and imaging.

    Science.gov (United States)

    Le, Han Q; Wang, Yang

    2010-01-01

    Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  6. Development of the power control system for semiconductor lasers

    International Nuclear Information System (INIS)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

  7. Mode-locking peculiarities in an all-fiber erbium-doped ring ultrashort pulse laser with a highly-nonlinear resonator

    Science.gov (United States)

    Dvoretskiy, Dmitriy A.; Sazonkin, Stanislav G.; Kudelin, Igor S.; Orekhov, Ilya O.; Pnev, Alexey B.; Karasik, Valeriy E.; Denisov, Lev K.

    2017-12-01

    Today ultrashort pulse (USP) fiber lasers are in great demand in a frequency metrology field, THz pulse spectroscopy, optical communication, quantum optics application, etc. Therefore mode-locked (ML) fiber lasers have been extensively investigated over the last decade due the number of scientific, medical and industrial applications. It should be noted, that USP fiber lasers can be treated as an ideal platform to expand future applications due to the complex ML nonlinear dynamics in a laser resonator. Up to now a series of novel ML regimes have been investigated e.g. self-similar pulses, noise-like pulses, multi-bound solitons and soliton rain generation. Recently, we have used a highly nonlinear germanosilicate fiber (with germanium oxides concentration in the core 50 mol. %) inside the resonator for more reliable and robust launching of passive mode-locking based on the nonlinear polarization evolution effect in fibers. In this work we have measured promising and stable ML regimes such as stretched pulses, soliton rain and multi-bound solitons formed in a highly-nonlinear ring laser and obtained by intracavity group velocity dispersion (GVD) variation in slightly negative region. As a result, we have obtained the low noise ultrashort pulse generation with duration 59 dB) and relative intensity noise <-101 dBc / Hz.

  8. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Directory of Open Access Journals (Sweden)

    Malik Kemiche

    2018-01-01

    Full Text Available We exploit slow light (high ng modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28, this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate of the pulsed laser signal.

  9. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Science.gov (United States)

    Kemiche, Malik; Lhuillier, Jérémy; Callard, Ségolène; Monat, Christelle

    2018-01-01

    We exploit slow light (high ng) modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28), this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate) of the pulsed laser signal.

  10. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  11. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    International Nuclear Information System (INIS)

    Minaev, V P

    2005-01-01

    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  12. Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber

    International Nuclear Information System (INIS)

    Li, M; Zhao, S; Li, Y; Yang, K; Li, G; Li, D; An, J; Li, T; Yu, Z

    2009-01-01

    By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the passively Q-switched pulse envelops ranges from 37.5 to 139 kHz as the pump power increased from 1.7 to 8.2 W. The mode-locked pulse inside the Q-switched envelop has an estimated pulse width of about 220 ps and a repetition rate of 111 MHz. Under an incident pump power of 8.2 W, the highest pulse energy of 6 μJ of each Q-switched envelope, and the highest peak power about 2.73 kW of Q-switched mode-locked pulses can be obtained

  13. Mechanism of multisoliton formation and soliton energy quantization in passively mode-locked fiber lasers

    International Nuclear Information System (INIS)

    Tang, D.Y.; Zhao, L.M.; Zhao, B.; Liu, A.Q.

    2005-01-01

    We report results of numerical simulations on multiple-soliton generation and soliton energy quantization in a soliton fiber ring laser passively mode locked by using the nonlinear polarization rotation technique. We found numerically that the formation of multiple solitons in the laser is caused by a peak-power-limiting effect of the laser cavity. It is also the same effect that suppresses the soliton pulse collapse, an intrinsic feature of solitons propagating in gain media, and makes the solitons stable in the laser. Furthermore, we show that the soliton energy quantization observed in the lasers is a natural consequence of the gain competition between the multiple solitons. Enlightened by the numerical result we speculate that multisoliton formation and soliton energy quantization observed in other types of soliton fiber lasers could have a similar mechanism

  14. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    International Nuclear Information System (INIS)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

    2000-01-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  15. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    Science.gov (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  16. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  17. Ultrafast dynamics and laser action of organic semiconductors

    CERN Document Server

    Vardeny, Zeev Valy

    2009-01-01

    Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

  18. Comparison of the noise performance of 10GHz QW and QD mode-locked laser diodes

    DEFF Research Database (Denmark)

    Carpintero, Guillermo; Thompson, Mark G.; Yvind, Kresten

    2010-01-01

    This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes.......This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes....

  19. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

    1999-01-01

    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

  20. Optically pumped semiconductor lasers for atomic and molecular physics

    Science.gov (United States)

    Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

    2015-03-01

    Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

  1. Active mode-locking of mid-infrared quantum cascade lasers with short gain recovery time.

    Science.gov (United States)

    Wang, Yongrui; Belyanin, Alexey

    2015-02-23

    We investigate the dynamics of actively modulated mid-infrared quantum cascade lasers (QCLs) using space- and time-domain simulations of coupled density matrix and Maxwell equations with resonant tunneling current taken into account. We show that it is possible to achieve active mode locking and stable generation of picosecond pulses in high performance QCLs with a vertical laser transition and a short gain recovery time by bias modulation of a short section of a monolithic Fabry-Perot cavity. In fact, active mode locking in QCLs with a short gain recovery time turns out to be more robust to the variation of parameters as compared to previously studied lasers with a long gain recovery time. We investigate the effects of spatial hole burning and phase locking on the laser output.

  2. Dispersion and Nonlinearity Characterization of a Mode-Locked Erbium-Doped Fiber Laser

    National Research Council Canada - National Science Library

    Louthain, James

    2001-01-01

    .... These chirped Bragg gratings served as one of the mirrors in the linear fiber laser cavity. Finally, we measured the nonlinearity of five different muhiple quantum well saturable absorbers using a z-scan technique...

  3. Dispersion Management in a Harmonically Mode-Locked Fiber Soliton Laser

    National Research Council Canada - National Science Library

    Carruthers, Thomas F; Duling, III, Irl N; Horowitz, Moshe; Menyuk, Curtis R

    1999-01-01

    ... because of their low-noise, dropout-free operation. We have fabricated such a laser with a strongly dispersion-managed cavity and modeled its operation, and we have found that dispersion management significantly extends the power range...

  4. Integrated semiconductor twin-microdisk laser under mutually optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  5. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta

    2011-01-01

    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  6. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

    International Nuclear Information System (INIS)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm −1 and the disappearance of the 2D-band peak at 2700 cm −1 . The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth. (letter)

  7. Cryogenically-cooled Yb:YGAG ceramic mode-locked laser

    Czech Academy of Sciences Publication Activity Database

    Mužík, Jiří; Jelínek, M.; Jambunathan, Venkatesan; Miura, Taisuke; Smrž, Martin; Endo, Akira; Mocek, Tomáš; Kubeček, V.

    2015-01-01

    Roč. 24, č. 2 (2015), s. 1402-1408 ISSN 1094-4087 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA MŠk LO1602; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : solid-states laser * lasing characteristics Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.148, year: 2015

  8. Low-confinement high-power semiconductor lasers

    NARCIS (Netherlands)

    Buda, M.

    1999-01-01

    This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

  9. Optical trapping with Bessel beams generated from semiconductor lasers

    International Nuclear Information System (INIS)

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

    2014-01-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  10. Dynamics of laterally coupled semiconductor lasers: transition to chaos

    NARCIS (Netherlands)

    Yousefi, M.; Barsella, A.; Lenstra, D.; Lenstra, D.; Morthier, G.; Erneux, T.; Pessa, M.

    2004-01-01

    A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were

  11. Mathematical modeling of thermal runaway in semiconductor laser operation

    NARCIS (Netherlands)

    Smith, W.R.

    2000-01-01

    A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

  12. Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes

    International Nuclear Information System (INIS)

    Yanson, D. A.; Street, M. W.; McDougall, S. D.; Thayne, I. G.; Marsh, J. H.; Avrutin, E. A.

    2001-01-01

    Compound-cavity laser diodes are mode locked at a harmonic of the fundamental round-trip frequency to achieve repetition rates of up to 2.1 THz. The devices are fabricated from GaAs/AlGaAs material at a wavelength of 860 nm and incorporate two gain sections with an etched slot reflector between them, and a saturable absorber section. Autocorrelation studies are used to investigate device behavior for different reflector types and reflectivity. These lasers may find applications in terahertz imaging, medicine, ultrafast optical links, and atmospheric sensing. [copyright] 2001 American Institute of Physics

  13. Comparison of Monolithic Optical Frequency Comb Generators Based on Passively Mode-Locked Lasers for Continuous Wave mm-Wave and Sub-THz Generation

    DEFF Research Database (Denmark)

    Criado, A. R.; de Dios, C.; Acedo, P.

    2012-01-01

    In this paper, two different Passive Mode-Locked Laser Diodes (PMLLD) structures, a Fabry–Perot cavity and a ring cavity laser are characterized and evaluated as monolithic Optical Frequency Comb Generators (OFCG) for CW sub-THz generation. An extensive characterization of the devices under study...... is carried out based on an automated measurement system that systematically evaluates the dynamic characteristics of the devices, focusing on the figures of merit that define the optimum performance of a pulsed laser source when considered as an OFCG. Sub-THz signals generated with both devices at 60 GHz...... topologies that can be used for the implementation of photonic integrated sub-THz CW generation....

  14. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

    Science.gov (United States)

    Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

    2017-12-01

    Passive mode locking with a fundamental repetition rate at ˜18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.

  15. Investigation into diode pumped modelocked Nd based laser oscillators for the CLIC-3 photoinjector system

    NARCIS (Netherlands)

    Valentine, G.J.; Burns, D.; Bente, E.A.J.M.; Berghmans, F.; Thienpont, H.; Danckaert, J.; Desmet, L.

    2001-01-01

    The photo-injector system envisaged for the proposed CLIC linear e+-e- accelerator at CERN has a demanding set of specifications on output pulse structure, power and timing stability. This paper reports on results obtained with quasi-CW diode pumped laser oscillators with output stabilisation. A

  16. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  17. Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

    Science.gov (United States)

    Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

    2018-04-02

    Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

  18. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  19. Radiation effects in semiconductor laser diode arrays

    International Nuclear Information System (INIS)

    Carson, R.F.

    1988-01-01

    The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

  20. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-07-28

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  1. The history of laser conditions in semiconductors

    International Nuclear Information System (INIS)

    Bernard, Maurice

    2012-01-01

    Fifty years ago, summer 1962: in three independent laboratories of the US East Coast, almost simultaneously, IR coherent light was for the first time emitted from semiconductor crystals. No theory was associated with these results. Two years before, Georges Duraffourg and Maurice Bernard had readily proved that for such phenomenon to occur requires that a relation is fulfilled between quasi-Fermi levels and photon energy: F n − F p > hν. This paper presents an overview of this important period of history and the events that occurred around that time. (paper)

  2. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

    2009-01-01

    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  3. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  4. Simultaneous Q-switching and mode-locking in an intracavity frequency doubled diode-pumped Nd:YVO4 / KTP green laser with Cr4+:YAG

    International Nuclear Information System (INIS)

    Mukhopadhyay, P. K.; Ranganathan, K.; George, J.; Nathan, T. P. S.; Alsous, M. B.

    2007-01-01

    We report intracavity second harmonic (at 532 nm) generation in passively Q-switched mode-locked Nd: YVO4 laser. The width of a typical Q-switched envelope of the mode locked pulses for the green laser was around 65 ± 5 ns and the repetition rate for the mode locked pulses was 400 MHz. The intracavity frequency doubling significantly improves the depth of modulation of the mode locked pulses. The peak power of a single mode locked green pulse near the center of the Q-switched envelope was estimated to be more than 2kw and the average green power was 6 times higher than the CW green power at an incident diode pump power of 6W. (author)

  5. Review on the dynamics of semiconductor nanowire lasers

    Science.gov (United States)

    Röder, Robert; Ronning, Carsten

    2018-03-01

    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  6. Synchronous characterization of semiconductor microcavity laser beam.

    Science.gov (United States)

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  7. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Energy Technology Data Exchange (ETDEWEB)

    Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  8. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    International Nuclear Information System (INIS)

    Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

    2016-01-01

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  9. Semiconductor Laser Wind Lidar for Turbine Control

    DEFF Research Database (Denmark)

    Hu, Qi

    This thesis describes an experimentally oriented study of continuous wave (CW) coherent Doppler lidar system design. The main application is remote wind sensing for active wind turbine control using nacelle mounted lidar systems; and the primary focus is to devise an industrial instrument that can...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...... investigation of the telescope truncation and lens aberrations is conducted, both numerically and experimentally. It is shown that these parameters dictate the spatial resolution of the lidar system, and have profound impact on the SNR. In this work, an all-semiconductor light source is used in the lidar design...

  10. On increasing the efficiency of a streamer semiconductor laser

    International Nuclear Information System (INIS)

    Rusakov, K I; Parashchuk, V V

    2007-01-01

    The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa 2 S 4 and Eu:Ca 4 Ga 2 S 7 materials. (lasers)

  11. Final Report: High Power Semiconductor Laser Sources,

    Science.gov (United States)

    1989-01-01

    Mittelstein, Yasuhiko Arakawa, ) Anders Larssonb) and Amnon Yariv California Institute of Technology, Pasadena, California 91 125~412 (Received 7 July...Electronics and Commu- nication Engineers of Japan. He is a member of the Institute of Electronics Yasuhiko Arakawa S󈨑-M󈨔) was born in Ai- and...Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers YASUHIKO ARAKAWA. MEMBER, IEEE. AND AMNON YARIV. FELLOW. IEEE Abstract

  12. Nonlinear gain suppression in semiconductor lasers due to carrier heating

    International Nuclear Information System (INIS)

    Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.

    1991-01-01

    We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

  13. Semiconductor ring lasers coupled by a single waveguide

    Science.gov (United States)

    Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

    2012-06-01

    We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

  14. Field-glass range finder with a semiconductor laser

    Science.gov (United States)

    Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan

    1995-03-01

    This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

  15. Modes in light wave propagating in semiconductor laser

    Science.gov (United States)

    Manko, Margarita A.

    1994-01-01

    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  16. Toward continuous-wave operation of organic semiconductor lasers

    Science.gov (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

    2017-01-01

    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  17. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  18. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

    Science.gov (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

    2017-08-03

    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  19. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

    2015-01-01

    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

  20. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  1. Transient thermal analysis of semiconductor diode lasers under pulsed operation

    Science.gov (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.

    2017-02-01

    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  2. Chaos-pass filtering in injection-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Murakami, Atsushi; Shore, K. Alan

    2005-01-01

    Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

  3. Gigahertz repetition rate, sub-femtosecond timing jitter optical pulse train directly generated from a mode-locked Yb:KYW laser.

    Science.gov (United States)

    Yang, Heewon; Kim, Hyoji; Shin, Junho; Kim, Chur; Choi, Sun Young; Kim, Guang-Hoon; Rotermund, Fabian; Kim, Jungwon

    2014-01-01

    We show that a 1.13 GHz repetition rate optical pulse train with 0.70 fs high-frequency timing jitter (integration bandwidth of 17.5 kHz-10 MHz, where the measurement instrument-limited noise floor contributes 0.41 fs in 10 MHz bandwidth) can be directly generated from a free-running, single-mode diode-pumped Yb:KYW laser mode-locked by single-wall carbon nanotube-coated mirrors. To our knowledge, this is the lowest-timing-jitter optical pulse train with gigahertz repetition rate ever measured. If this pulse train is used for direct sampling of 565 MHz signals (Nyquist frequency of the pulse train), the jitter level demonstrated would correspond to the projected effective-number-of-bit of 17.8, which is much higher than the thermal noise limit of 50 Ω load resistance (~14 bits).

  4. Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

    International Nuclear Information System (INIS)

    Kim, Won-Jun; Debnath, Pulak C; Song, Yong-Won; Lee, Junsu; Lee, Ju Han; Lim, Dae-Soon

    2013-01-01

    Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz. (paper)

  5. Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

    International Nuclear Information System (INIS)

    Li, T; Zhao, S; Li, Y; Zhuo, Z; Yang, K; Li, G; Li, D; Yu, Z

    2009-01-01

    A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In 0.25 Ga 0.75 As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In 0.25 Ga 0.75 As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%

  6. Transfer of an exfoliated monolayer graphene flake onto an optical fiber end face for erbium-doped fiber laser mode-locking

    International Nuclear Information System (INIS)

    Rosa, Henrique Guimaraes; De Souza, Eunézio A Thoroh; Gomes, José Carlos Viana

    2015-01-01

    This paper presents, for the first time, the successful transfer of exfoliated monolayer graphene flake to the optical fiber end face and alignment to its core. By fabricating and optimizing a polymeric poly(methyl methacrylate) (PMMA) and polyvinyl alcohol (PVA) substrate, it is possible to obtain a contrast of up to 11% for green light illumination, allowing the identification of monolayer graphene flakes that were transferred to optical fiber samples and aligned to its core. With Raman spectroscopy, it is demonstrated that graphene flake completely covers the optical fiber core, and its quality remains unaltered after the transfer. The generation of mode-locked erbium-doped fiber laser pulses, with a duration of 672 fs, with a single-monolayer graphene flake as a saturable absorber, is demonstrated for the first time. This transfer technique is of general applicability and can be used for other two-dimensional (2D) exfoliated materials. (letter)

  7. Fast physical random bit generation with chaotic semiconductor lasers

    Science.gov (United States)

    Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter

    2008-12-01

    Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

  8. A semiconductor nanowire Josephson junction microwave laser

    Science.gov (United States)

    Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

    We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

  9. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

  10. Diagnostic studies of molecular plasmas using mid-infrared semiconductor lasers

    NARCIS (Netherlands)

    Röpcke, J.; Welzel, S.; Lang, N.; Hempel, F.; Gatilova, L.; Guaitella, O.; Rousseau, A.; Davies, P.B.

    2008-01-01

    Within the last decade mid-infrared absorption spectroscopy between 3 and 20 µm, known as infrared laser absorption spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has

  11. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

    2002-01-01

    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  12. Effect of beam expansion loss in a carbon nanotube-doped PVA film on passively mode-locked erbium-doped fiber lasers with different feedback ratios

    International Nuclear Information System (INIS)

    Cheng, Kuang-Nan; Chi, Yu-Chieh; Cheng, Chih-Hsien; Lin, Yung-Hsiang; Lo, Jui-Yung; Lin, Gong-Ru

    2014-01-01

    The effect of beam expansion induced divergent loss in a single-wall carbon nanotube (SWCNT) doped polyvinyl alcohol (PVA) based ultrafast saturable absorber (SA) film thickness on the passive mode-locking (PML) performances of erbium-doped fiber lasers are demonstrated. The variation on the PML pulsewidth of the EDFL is discussed by changing the SWCNT-PVA SA film thicknesses, together with adjusting the pumping power and the intra-cavity feedback ratio. An almost 6 dB increment of divergent loss when enlarging the SWCNT-PVA based SA film thickness from 30–130 µm is observed. When shrinking the SA thickness to 30 µm at the largest pumping power of 52.5 mW, the optical spectrum red-shifts to 1558.8 nm with its 3 dB spectral linewidth broadening up to 2.7 nm, while the pulse has already entered the soliton regime with multi-order Kelly sidebands aside the spectral shoulder. The soliton pulsewidth is as short as 790 fs, which is much shorter than those obtained with other thicker SWCNT doped PVA polymer film based SAs; therefore, the peak power from the output of the PML-EDFL is significantly enlarged accompanied by a completely suppressed residual continuous-wave level to achieve the largest on/off extinction ratio. The main mechanism of pulse shortening with reducing thickness of SWCNT doped PVA polymer film based SA is attributed to the limited beam expansion as well as the enlarged modulation depth, which results in shortened soliton pulsewidth with a clean dc background, and broadened spectrum with enriched Kelly sidebands. The increase of total SWCNT amount in the thicker SA inevitably causes a higher linear absorption; hence, the mode-locking threshold also rises accordingly. By enlarging pumping power from 38.5–52.5 mW, the highest ascent on pulse extinction of up to 32 dB is observed among all kinds of feedback conditions. Nevertheless, the enlargement on the extinction slightly decays with increasing the feedback ratio from 30–90

  13. Excitonic bistabilities, instabilities and chaos in laser-pumped semiconductor

    International Nuclear Information System (INIS)

    Nguyen Ba An; Nguyen Trung Dan; Hoang Xuan Nguyen

    1992-07-01

    The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an external laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self-oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. (author). 16 refs, 6 figs

  14. An electrically injected rolled-up semiconductor tube laser

    Energy Technology Data Exchange (ETDEWEB)

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  15. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

    2016-01-01

    name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...... and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal....

  16. Monolithic integration of microfluidic channels and semiconductor lasers

    Science.gov (United States)

    Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

    2006-08-01

    We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

  17. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

    International Nuclear Information System (INIS)

    Li Mi-Feng; Ni Hai-Qiao; Niu Zhi-Chuan; Ding Ying; David Bajek; Liang Kong; Ana Cataluna Maria

    2014-01-01

    The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 °C, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1 × 10 −6 Torr (1 Torr = 1.33322 × 10 2 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ∼ 19.7-GHz repetition rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Comparison on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fibre lasers

    Science.gov (United States)

    Yang, Chun-Yu; Lin, Yung-Hsiang; Wu, Chung-Lun; Cheng, Chih-Hsien; Tsai, Din-Ping; Lin, Gong-Ru

    2018-06-01

    Comparisons on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fiber lasers (EDFLs) are performed. As opposed to the graphite nano-particles obtained by physically triturating the graphite foil, the tri-layer graphene nano-sheets is obtained by electrochemically exfoliating the graphite foil. To precisely control the size dispersion and the layer number of the exfoliated graphene nano-sheet, both the bias of electrochemical exfoliation and the speed of centrifugation are optimized. Under a threshold exfoliation bias of 3 volts and a centrifugation at 1000 rpm, graphene nano-sheets with an average diameter of 100  ±  40 nm can be obtained. The graphene nano-sheets with an area density of 15 #/µm2 are directly imprinted onto the end-face of a single-mode fiber made patchcord connector inside the EDFL cavity. Such electrochemically exfoliated graphene nano-sheets show comparable saturable absorption with standard single-graphene and perform the self-amplitude modulation better than physically triturated graphite nano-particles. The linear transmittance and modulation depth of the inserted graphene nano-sheets are 92.5% and 53%, respectively. Under the operation with a power gain of 21.5 dB, the EDFL can be passively mode-locked to deliver a pulsewidth of 454.5 fs with a spectral linewidth of 5.6 nm. The time-bandwidth product of 0.31 is close to the transform limit. The Kelly sideband frequency spacing of 1.34 THz is used to calculate the chirp coefficient as  ‑0.0015.

  19. Design and construct of a tunable semiconductor laser

    Directory of Open Access Journals (Sweden)

    J. Sabbaghzadeh

    2000-06-01

    Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

  20. The dynamical complexity of optically injected semiconductor lasers

    International Nuclear Information System (INIS)

    Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

    2005-01-01

    This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

  1. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

    DEFF Research Database (Denmark)

    Dontabactouny, M.; Piron, R.; Klaime, K.

    2012-01-01

    This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 m...

  2. All-metal coupling and package of semiconductor laser and amplifier with optical fiber

    International Nuclear Information System (INIS)

    Xu Fenglan; Li Lina; Zhang Yueqing

    1992-01-01

    The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

  3. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

    2016-01-01

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

  4. Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

    Science.gov (United States)

    Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

    2011-09-01

    To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

  5. Ultrashort Generation Regimes in the All-Fiber Kerr Mode-Locked Erbium-Doped Fiber Ring Laser for Terahertz Pulsed Spectroscopy

    Directory of Open Access Journals (Sweden)

    V. S. Voropaev

    2015-01-01

    Full Text Available Many femtosecond engineering applications require for a stable generation of ultrashort pulses. Thus, in the terahertz pulsed spectroscopy a measurement error in the refractive index is strongly dependent on the pulse duration stability with allowable variation of few femtoseconds. The aim of this work is to study the ultrashort pulses (USP regimes stability in the all – fiber erbium doped ring laser with Kerr mode-locking. The study was conducted at several different values of the total resonator intra-cavity dispersion. Three laser schemes with the intra-cavity dispersion values from -1.232 ps2 to +0.008 ps2 have been studied. In the experiment there were two regimes of generation observed: the stretched pulse generation and ordinary soliton generation. Main attention is focused on the stability of regimes under study. The most stable regime was that of the stretched pulse generation with a spectrum form of sech2 , possible pulse duration of 490 fs at least, repetition rate of 2.9 MHz, and average output power of 17 mW. It is worth noting, that obtained regimes had characteristics suitable for the successful use in the terahertz pulsed spectroscopy. The results may be useful in the following areas of science and technology: a high-precision spectroscopy, optical frequency standards, super-continuum generation, and terahertz pulsed spectroscopy. The future system development is expected to stabilize duration and repetition rate of the obtained regime of ultra-short pulse generation.

  6. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

    2000-07-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  7. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  8. A novel mode-locking technique

    International Nuclear Information System (INIS)

    Chen Shaoh; Chen Youming; Chen Taolue; Si Xiangdong; Yang Yi; Deng Ximing

    1993-01-01

    A novel mode-locked Nd:YAG oscillator has been developed by using an ultrafast photoconductive feedback controlled loop, and mode-locked pulses with a duration of 100ps have been obtained. The energy instability of the pulse trains is ±5%. In this type of mode-locking technology, a type of deep-level doped GaAs (Cr-doped) photoconductive switch, which has a fast response in time and is free of avalance process, is used to drive a Pockels' cell to realize mode-locking. The dark resistance of this type of photoconductive switch is 6 orders of magnitude higher than that of the intrinsic single-crystal silicon, and it can reach a level as high as 10 9 ohms. Consequently, it is able to withstand longterm operation at several thousand DC volts. By means of the photoconductive ohmic switch characteristics, the authors have designed a positive feedback control network which has a very fast response time, and can couple a voltage of up to a thousand volts. Using this unit in a Nd:YAG laser, they have successfully realized a very stable mode-locked pulse train with pulse width shorter than 100 ps. The operation principle, and the results of the preliminary experiments are presented here. 1 ref., 3 figs

  9. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  10. Multiclustered chimeras in large semiconductor laser arrays with nonlocal interactions

    Science.gov (United States)

    Shena, J.; Hizanidis, J.; Hövel, P.; Tsironis, G. P.

    2017-09-01

    The dynamics of a large array of coupled semiconductor lasers is studied numerically for a nonlocal coupling scheme. Our focus is on chimera states, a self-organized spatiotemporal pattern of coexisting coherence and incoherence. In laser systems, such states have been previously found for global and nearest-neighbor coupling, mainly in small networks. The technological advantage of large arrays has motivated us to study a system of 200 nonlocally coupled lasers with respect to the emerging collective dynamics. Moreover, the nonlocal nature of the coupling allows us to obtain robust chimera states with multiple (in)coherent domains. The crucial parameters are the coupling strength, the coupling phase and the range of the nonlocal interaction. We find that multiclustered chimera states exist in a wide region of the parameter space and we provide quantitative characterization for the obtained spatiotemporal patterns. By proposing two different experimental setups for the realization of the nonlocal coupling scheme, we are confident that our results can be confirmed in the laboratory.

  11. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  12. Thermally controlled comb generation and soliton modelocking in microresonators.

    Science.gov (United States)

    Joshi, Chaitanya; Jang, Jae K; Luke, Kevin; Ji, Xingchen; Miller, Steven A; Klenner, Alexander; Okawachi, Yoshitomo; Lipson, Michal; Gaeta, Alexander L

    2016-06-01

    We report, to the best of our knowledge, the first demonstration of thermally controlled soliton mode-locked frequency comb generation in microresonators. By controlling the electric current through heaters integrated with silicon nitride microresonators, we demonstrate a systematic and repeatable pathway to single- and multi-soliton mode-locked states without adjusting the pump laser wavelength. Such an approach could greatly simplify the generation of mode-locked frequency combs and facilitate applications such as chip-based dual-comb spectroscopy.

  13. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  14. Comprehensive and fully self-consistent modeling of modern semiconductor lasers

    International Nuclear Information System (INIS)

    Nakwaski, W.; Sarzał, R. P.

    2016-01-01

    The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

  15. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

    Science.gov (United States)

    Al-Kabi, Sattar H. Sweilim

    Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

  16. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    Directory of Open Access Journals (Sweden)

    Vincenzo Spagnolo

    2009-12-01

    Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

  17. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    International Nuclear Information System (INIS)

    Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long

    2012-01-01

    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

  18. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    International Nuclear Information System (INIS)

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

    2013-01-01

    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

  19. Piezoelectric strained layer semiconductor lasers and integrated modulators

    International Nuclear Information System (INIS)

    Fleischmann, Thomas

    2002-01-01

    The properties, benefits and limitations of strained InGaAs/GaAs quantum well lasers and modulators grown on (111)B GaAs have been studied. Particular interest in this material system arose from the predicted increase in critical layer thickness, which would facilitate semiconductor lasers emitting beyond 1 μm. However, the recent discovery of a new type of misfit dislocation indicates that the critical layer thickness in this system is closer to that of (001) orientated structures. Photoluminescence and transmission electron microscopy presented in this study support this predicted reduction of the critical layer thickness and the resulting limitations on the emission wavelength. The absence of 3D growth in this system may however be advantageous when high reproducibility and reliable lasing operation beyond 1 μm are required. The piezoelectric field originating from strained growth on substrate orientations other than (001) was studied and its influence on transition energies and absorptive behaviour were investigated. The piezoelectric constant was found to show significant temperature dependence and, as also indicated in earlier studies, its value is smaller then the linearly interpolated value. When the effects of indium segregation on the transition energies is considered, the reduction is significantly smaller. Good agreement between theory and experiment was obtained using 86% of the value linearly interpolated between the binaries at room temperature and 82% at low temperature. Broad area lasers were fabricated emitting at lasing wavelengths of up to 1.08 μm with threshold current densities as low as 80 A/cm 2 at room temperature under continuous wave operation. Increasing the indium composition and strain within the limit of strain relaxation was demonstrated to improve device performance significantly. Furthermore, ridge waveguide lasers were fabricated exhibiting monomode emission at wavelengths up to 1.07 μm with a threshold current of 19 mA at

  20. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

    2010-01-01

    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

  1. Unidirectional, dual-comb lasing under multiple pulse formation mechanisms in a passively mode-locked fiber ring laser

    OpenAIRE

    Liu, Ya; Zhao, Xin; Hu, Guoqing; Li, Cui; Zhao, Bofeng; Zheng, Zheng

    2016-01-01

    Dual-comb lasers from which asynchronous ultrashort pulses can be simultaneously generated have recently become an interesting research subject. They could be an intriguing alternative to the current dual-laser optical-frequency-comb source with highly sophisticated electronic control systems. If generated through a common light path traveled by all pulses, the common-mode noises between the spectral lines of different pulse trains could be significantly reduced. Therefore, coherent dual-comb...

  2. Mode-locking via dissipative Faraday instability.

    Science.gov (United States)

    Tarasov, Nikita; Perego, Auro M; Churkin, Dmitry V; Staliunas, Kestutis; Turitsyn, Sergei K

    2016-08-09

    Emergence of coherent structures and patterns at the nonlinear stage of modulation instability of a uniform state is an inherent feature of many biological, physical and engineering systems. There are several well-studied classical modulation instabilities, such as Benjamin-Feir, Turing and Faraday instability, which play a critical role in the self-organization of energy and matter in non-equilibrium physical, chemical and biological systems. Here we experimentally demonstrate the dissipative Faraday instability induced by spatially periodic zig-zag modulation of a dissipative parameter of the system-spectrally dependent losses-achieving generation of temporal patterns and high-harmonic mode-locking in a fibre laser. We demonstrate features of this instability that distinguish it from both the Benjamin-Feir and the purely dispersive Faraday instability. Our results open the possibilities for new designs of mode-locked lasers and can be extended to other fields of physics and engineering.

  3. Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

    International Nuclear Information System (INIS)

    Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

    1989-01-01

    Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

  4. Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

    Science.gov (United States)

    Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

    2018-04-01

    The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

  5. Technique for long and absolute distance measurement based on laser pulse repetition frequency sweeping

    Science.gov (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, A.; Jost, Michael; Rebordão, J. M.

    2017-11-01

    In this work we present a technique to perform long and absolute distance measurements based on mode-locked diode lasers. Using a Michelson interferometer, it is possible to produce an optical cross-correlation between laser pulses of the reference arm with the pulses from the measurement arm, adjusting externally their degree of overlap either changing the pulse repetition frequency (PRF) or the position of the reference arm mirror for two (or more) fixed frequencies. The correlation of the travelling pulses for precision distance measurements relies on ultra-short pulse durations, as the uncertainty associated to the method is dependent on the laser pulse width as well as on a highly stable PRF. Mode-locked Diode lasers are a very appealing technology for its inherent characteristics, associated to compactness, size and efficiency, constituting a positive trade-off with regard to other mode-locked laser sources. Nevertheless, main current drawback is the non-availability of frequency-stable laser diodes. The laser used is a monolithic mode-locked semiconductor quantum-dot (QD) laser. The laser PRF is locked to an external stabilized RF reference. In this work we will present some of the preliminary results and discuss the importance of the requirements related to laser PRF stability in the final metrology system accuracy.

  6. 12 nJ 2 μm dissipative soliton fiber laser

    International Nuclear Information System (INIS)

    Yang, Nan; Huang, Chongyuan; Tang, Yulong; Xu, Jianqiu

    2015-01-01

    We report high-energy 2 μm dissipative soliton generation from a passively mode-locked thulium-doped fiber laser with a semiconductor saturable absorber mirror. Self-starting stable mode-locking has been achieved with pulse energy of 12.07 nJ, pulse width of 43 ps and average power of 263 mW at a repetition rate of 21.79 MHz. The laser spectral width is ∼2.65 nm with a center wavelength of 1928.2 nm. To the best of our knowledge, this is the highest single pulse energy reported to date directly from a passively mode-locked thulium-doped fiber laser. (letter)

  7. A study on the optical parts for a semiconductor laser module

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

    2014-11-15

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  8. Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

    Science.gov (United States)

    Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

    2011-04-25

    Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

  9. Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

    International Nuclear Information System (INIS)

    Smetanin, Igor V; Vasil'ev, Petr P

    2009-01-01

    Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated. (control of laser radiation parameters)

  10. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li

    2012-12-01

    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  11. Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2015-08-31

    We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

  12. Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

    2011-01-01

    The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

  13. Laser interferometric method for determining the carrier diffusion length in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  14. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru

    2014-01-01

    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  15. Increasing the mode-locking efficiency of a cw solid-state laser with an auxiliary cavity

    International Nuclear Information System (INIS)

    Kalashnikov, V.L.; Kalosha, V.P.; Mikhailov, V.P.; Demchuk, M.I.

    1992-01-01

    It is predicted theoretically that the efficiency of self-mode locking can be raised by means of a bleachable shutter in the main cavity or an auxiliary cavity. The laser emits a stable train of ultrashort pulses under these conditions. The theory is based on a fluctuation model of the operation of a cw solid-state laser with a linear auxiliary cavity. The increase in efficiency involves a broadening of the region of parameter values of the system in which self-mode locking occurs, a significant decrease in the threshold pump intensity, and a reduced sensitivity of the operation to the phase mismatch of the lengths of the cavities. It is shown, for the first time, that a stable train of double ultrashort pulses can be generated by a system with a shutter in the auxiliary cavity. It is also shown that a self-mode locking is possible in the case in which there is a phase mismatch of the cavity lengths and there is no phase self-modulation in the main cavity. 15 refs., 8 figs

  16. Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

    Science.gov (United States)

    Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

    2018-01-01

    Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

  17. Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang

    1991-01-01

    The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

  18. Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

    International Nuclear Information System (INIS)

    Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

    2009-01-01

    The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

  19. Fiber optical laser spot microscope: A new concept for photoelectrochemical characterization of semiconductor electrodes

    OpenAIRE

    Carlsson, Per; Holmström, Bertil; Uosaki, Kohei; Kita, Hideaki

    1988-01-01

    A fiber optical laser spot microscope, which allows the simultaneous measurements of photocurrent and reflected light intensity or the measurement of laser spot photocurrent under the illumination of other light sources, has been developed to study semiconductor/electrolyte interfaces. The capability of this microscope was demonstrated on as-cleaved and Pt-treated p-InSe. The Pt treatment increased the photocurrent and improved the lateral resolution due to the increase of surface reaction ra...

  20. Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

    International Nuclear Information System (INIS)

    Cotta, E A; Matinaga, F M

    2007-01-01

    We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

  1. Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

    International Nuclear Information System (INIS)

    Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

    2013-01-01

    We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

  2. Laser action on rare earth doped nitride semiconductor thin layers

    International Nuclear Information System (INIS)

    Oussif, A.; Diaf, M.

    2010-01-01

    Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

  3. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.

    2002-01-01

    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  4. Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

    NARCIS (Netherlands)

    Yabre, G.S.

    1998-01-01

    In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

  5. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus

    1976-01-01

    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  6. Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

    Science.gov (United States)

    Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

    1991-04-01

    The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

  7. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

    1999-01-01

    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

  8. Study on biological effect on mice and use safety of 830 nm semiconductor laser

    International Nuclear Information System (INIS)

    Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang

    2006-01-01

    Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

  9. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  10. Ultrawideband pulse generation based on overshooting effect in gain-switched semiconductor laser

    DEFF Research Database (Denmark)

    Torres-Company, V.; Prince, Kamau; Tafur Monroy, Idelfonso

    2008-01-01

    We demonstrate an alternative procedure to achieve ultrawideband (UWB) radio-frequency (RF) doublet impulses. It is based on the overshooting effect appearing by biasing a semiconductor laser close to the threshold with a large-amplitude signal. Specifically, with an optical bandpass filter...... a reliable, easy, and low-cost alternative for RF UWB impulse generation....

  11. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  12. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

    1988-01-01

    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

  13. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

  14. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

  15. Semiconductor and ceramic microstructure made by single mode fiber laser

    International Nuclear Information System (INIS)

    Pawlak, R; Tomczyk, M; Walczak, M; Domagalski, P

    2014-01-01

    In the paper the results of micromachining of 3D microstructures of microsystems made from silicon and alumina ceramic using a single mode fiber laser (1064 nm) are presented. The quality of obtained structures and its smallest dimensions with acceptable maintained quality were examined. The influence of variable parameters of laser processing with changing of mapping scale on geometrical features of structures was identified.

  16. Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

    Science.gov (United States)

    Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

    2018-02-01

    This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

  17. Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

    Science.gov (United States)

    Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

    2017-01-01

    Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (pirrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

  18. A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

    DEFF Research Database (Denmark)

    Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal

    2009-01-01

    A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser......, the generated signals with complex shape in time domain match the Federal Communications Commission (FCC) mask in the frequency domain. Experimental results using a DML agree well with simulation predictions. Furthermore, we also experimentally demonstrate the generation of FCC compliant UWB signals...

  19. Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

    Science.gov (United States)

    Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-05-28

    An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered ....

  1. The theory of laser annealing of disordered semiconductors

    International Nuclear Information System (INIS)

    Noga, M.

    1980-01-01

    A theoretical explanation of the disorder-order phase transition concerning the ion implanted Si pulsed laser annealing is given. The phase transition is related to the Bose condensation of electron-hole plasmons. (author)

  2. Application of laser spot cutting on spring contact probe for semiconductor package inspection

    Science.gov (United States)

    Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

    2017-12-01

    A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

  3. Threshold reduction through photon recycling in semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Gigase, Y.B.; Harder, C.S.; Kesler, M.P.; Meier, H.P. (IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon (Switzerland)); Van Zeghbroeck, B. (University of Colorado, Boulder, CO (USA))

    1990-09-24

    The threshold pump power of an AlGaAs-GaAs ridge quantum well laser diode has been reduced by 42% by recycling the spontaneous emission. An integrated photodiode absorbs the spontaneous radiation emitted by the laser diode and converts it back into electrical power. The recycling of this power results in a reduction of the electrical power required to reach the lasing threshold.

  4. Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

    Science.gov (United States)

    Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

    2017-06-01

    A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

  5. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

    Science.gov (United States)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

    2013-11-18

    Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

  6. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  7. Mode structure of delay-coupled semiconductor lasers: influence of the pump current

    International Nuclear Information System (INIS)

    Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

    2005-01-01

    We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

  8. Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

    Science.gov (United States)

    Wan, W J; Li, H; Zhou, T; Cao, J C

    2017-03-08

    Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

  9. The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

    Science.gov (United States)

    Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

    2011-01-01

    Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

  10. Fabrication of laser-target components by semiconductor technology

    International Nuclear Information System (INIS)

    Tindall, W.E.

    1979-01-01

    This paper describes the design and fabrication of a unique silicon substrate with which laser-target components can be mass produced. Different sizes and shapes of gold foils from 50 to 3000 microns in diameter and up to 25 microns thick have been produced with this process since 1976

  11. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  12. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    Science.gov (United States)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  13. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G

    2012-01-01

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  14. Preparation of ZnS semiconductor nanocrystals using pulsed laser ablation in aqueous surfactant solutions

    International Nuclear Information System (INIS)

    Choi, S-H; Sasaki, T; Shimizu, Y; Yoon, J-W; Nichols, W T; Sung, Y-E; Koshizaki, N

    2007-01-01

    Cubic ZnS semiconductor nanocrystals with the size of 2 to 5 nm were prepared by pulsed laser ablation in aqueous surfactant solutions of sodium dodecyl sulfate and cetyltrimethylammonium bromide without any further treatments. The obtained suspensions of the nanocrystals have broad photoluminescence emission from 375 to 600 nm. The abundance and emission intensity of the nanocrystals depend on the concentration of the surfactant in solution

  15. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

    2002-01-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  16. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

    2002-02-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  17. Semiconductor laser joint study program with Rome Laboratory

    Science.gov (United States)

    Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

    1994-09-01

    A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

  18. Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser

    Directory of Open Access Journals (Sweden)

    Kevin Schires

    2011-09-01

    Full Text Available We present the first comprehensive experimental study, to our knowledge, of the routes between nonlinear dynamics induced in a semiconductor laser under external optical injection based on an analysis of time-averaged measurements of the optical and RF spectra and phasors of real-time series of the laser output. The different means of analysis are compared for several types of routes and the benefits of each are discussed in terms of the identification and mapping of the nonlinear dynamics. Finally, the results are presented in a novel audio/video format that describes the evolution of the dynamics with the injection parameters.

  19. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers

    Science.gov (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira

    2010-03-01

    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  20. Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers

    International Nuclear Information System (INIS)

    Junges, Leandro; Gallas, Jason A C

    2015-01-01

    The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang–Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay –time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail. (paper)

  1. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

    Science.gov (United States)

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

    2015-02-01

    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

  2. Dynamics of InGaN tandem blue-violet semiconductor lasers

    International Nuclear Information System (INIS)

    Antohi, I.; Rusu, S.S.; Tronciu, V.Z.

    2013-01-01

    Full text: Blue-violet semiconductor lasers have received much attention because of their promise for high-density optical storage applications. In particular, blue-violet laser diodes operating at 400 nm are required for BD- systems and for use in medicine, biology, color printers and monitors, etc, In recent years, numerous fabrication methods have been proposed and developed for blue lasers with CW and self-pulsating operations and the lifetime of such lasers has been increased to over 15000 h. Recently, we have reported self-pulsation and excitable behaviour for an InGaN laser with a p-type saturable absorber, and SP in the frequency range from 1.6 to 2.9 GHz has been achieved with such lasers. In this paper, we present an investigation of the dynamics of tandem 400 nm blue-violet lasers with setup presented in Fig.1a. A particular feature of the devices is the connection of the contacts of the SA, to reduce the carrier lifetime in the SA with the intention of producing self-pulsation and excitability. We examine the laser dynamics in terms of bifurcation diagrams. A typical calculation of bifurcation for the periodic solution is shown in Fig. 1b. This figure shows the dependence of the peak of the photon number on the injected.

  3. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2015-07-27

    We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

  4. Quantum dash based single section mode locked lasers for photonic integrated circuits.

    Science.gov (United States)

    Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

    2014-05-05

    We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

  5. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2015-01-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

  6. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    International Nuclear Information System (INIS)

    Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

    2007-01-01

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

  7. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    Energy Technology Data Exchange (ETDEWEB)

    Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

    2007-12-15

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

  8. Laser photo-reflectance characterization of resonant nonlinear electro-refraction in thin semiconductor films

    International Nuclear Information System (INIS)

    Chism, Will; Cartwright, Jason

    2012-01-01

    Photo-reflectance (PR) measurements provide a non-contact means for the precise characterization of semiconductor electronic properties. In this paper, we investigate the use of a laser beam as the probe beam in the PR setup. In this case it is seen that the nonlinear refraction is responsible for the amplitude change of the reflected probe field, whereas the phase change is due to nonlinear absorption. The open aperture condition may then be used to eliminate the spatial phase at the detector, thereby isolating the electro-refractive contribution to the PR signal. This greatly simplifies the PR analysis and allows absolute measurements of electro-refraction in thin semiconductor films. We report the application of the laser PR technique to characterize physical strain in thin silicon on silicon-germanium films. - Highlights: ► We describe the theory of laser photoreflectance. ► Laser photoreflectance is used to independently characterize nonlinear refraction. ► We report the characterization of strain in thin strained silicon films.

  9. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  10. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  11. Frequency response control of semiconductor laser by using hybrid modulation scheme.

    Science.gov (United States)

    Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

    2016-10-31

    A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

  12. High-order diffraction gratings for high-power semiconductor lasers

    International Nuclear Information System (INIS)

    Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

    2012-01-01

    A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  13. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar

    2001-01-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  14. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.

    2003-01-01

    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  15. Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

    Science.gov (United States)

    Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

    2018-06-01

    This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

  16. Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled-cavity semiconductor laser

    OpenAIRE

    Vahala, Kerry; Paslaski, Joel; Yariv, Amnon

    1985-01-01

    Simultaneous direct modulation response enhancement, phase noise (linewidth) reduction, and frequency modulation suppression are produced in a coupled-cavity semiconductor laser by the detuned loading mechanism.

  17. Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

    2015-07-31

    A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

  18. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  19. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  20. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

  1. All-fiber interferometer-based repetition-rate stabilization of mode-locked lasers to 10-14-level frequency instability and 1-fs-level jitter over 1  s.

    Science.gov (United States)

    Kwon, Dohyeon; Kim, Jungwon

    2017-12-15

    We report on all-fiber Michelson interferometer-based repetition-rate stabilization of femtosecond mode-locked lasers down to 1.3×10 -14 frequency instability and 1.4 fs integrated jitter in a 1 s time scale. The use of a compactly packaged 10 km long single-mode fiber (SMF)-28 fiber link as a timing reference allows the scaling of phase noise at a 10 GHz carrier down to -80  dBc/Hz at 1 Hz Fourier frequency. We also tested a 500 m long low-thermal-sensitivity fiber as a reference and found that, compared to standard SMF-28 fiber, it can mitigate the phase noise divergence by ∼10  dB/dec in the 0.1-1 Hz Fourier frequency range. These results suggest that the use of a longer low-thermal-sensitivity fiber may achieve sub-femtosecond integrated timing jitter with sub-10 -14 -level frequency instability in repetition rate by a simple and robust all-fiber-photonic method.

  2. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Institute of Scientific and Technical Information of China (English)

    Min Zhao; Chang-Ye Sang; Zhen-Jun Wang; Yan-Chun Xu

    2016-01-01

    Objective:To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery.Methods:A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded.Results:The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05). The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05). The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05). The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05). The average healing time in the treatment group was significantly faster than that in the control group (P<0.05). Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  3. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Directory of Open Access Journals (Sweden)

    Min Zhao

    2016-06-01

    Full Text Available Objective: To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery. Methods: A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded. Results: The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05. The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05. The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05. The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05. The average healing time in the treatment group was significantly faster than that in the control group (P<0.05. Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  4. Crisis route to chaos in semiconductor lasers subjected to external optical feedback

    Science.gov (United States)

    Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

    2018-03-01

    Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

  5. Field performance of an all-semiconductor laser coherent Doppler lidar

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2012-01-01

    We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds...... measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable...

  6. Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

    Institute of Scientific and Technical Information of China (English)

    Xu Zhang; Huiying Ye; Zhaoxin Song

    2008-01-01

    Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

  7. Multi-user bidirectional communication using isochronal synchronisation of array of chaotic directly modulated semiconductor lasers

    International Nuclear Information System (INIS)

    Krishna, Bindu M.; John, Manu P.; Nandakumaran, V.M.

    2010-01-01

    Isochronal synchronisation between the elements of an array of three mutually coupled directly modulated semiconductor lasers is utilized for the purpose of simultaneous bidirectional secure communication. Chaotic synchronisation is achieved by adding the coupling signal to the self feedback signal provided to each element of the array. A symmetric coupling is effective in inducing synchronisation between the elements of the array. This coupling scheme provides a direct link between every pair of elements thus making the method suitable for simultaneous bidirectional communication between them. Both analog and digital messages are successfully encrypted and decrypted simultaneously by each element of the array.

  8. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

    1998-12-01

    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  9. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

    Science.gov (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

    2018-01-01

    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  10. All-fiber Ho-doped mode-locked oscillator based on a graphene saturable absorber

    Czech Academy of Sciences Publication Activity Database

    Sotor, J.; Pawliszewska, M.; Sobon, G.; Kaczmarek, P.; Przewolka, A.; Pasternak, I.; Cajzl, Jakub; Peterka, Pavel; Honzátko, Pavel; Kašík, Ivan; Strupinski, W.; Abramski, K.

    2016-01-01

    Roč. 41, č. 11 (2016), s. 2592-2595 ISSN 0146-9592 R&D Projects: GA ČR GA14-35256S; GA MŠk(CZ) LD15122 Institutional support: RVO:67985882 Keywords : Fiber lasers * Graphene * Mode-locked oscillators Subject RIV: BH - Optics , Masers, Lasers Impact factor: 3.416, year: 2016

  11. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

    2017-01-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

  12. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

    Science.gov (United States)

    Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang

    2010-07-01

    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

  13. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

    International Nuclear Information System (INIS)

    Guang-Hui, Li; An-Bang, Wang; Ye, Feng; Yang, Wang

    2010-01-01

    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication. (general)

  14. Comparative study of the performance of semiconductor laser based coherent Doppler lidars

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2012-01-01

    Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

  15. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-01

    Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  16. Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

    Science.gov (United States)

    Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

    2013-05-01

    We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

  17. New semiconductor laser technology for gas sensing applications in the 1650nm range

    Science.gov (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

    2017-08-01

    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  18. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  19. Gold nanorod saturable absorber for passive mode-locking at 1 μm wavelength

    International Nuclear Information System (INIS)

    Kang, Z; Li, Q; Gao, X J; Jia, Z X; Qin, G S; Qin, W P; Zhang, L; Feng, Y

    2014-01-01

    Gold nanorods (GNRs) were used as a saturable absorber (SA) for passive mode-locking at 1 μm wavelength. The GNR-SA film was fabricated by mixing GNRs with sodium carboxymethylcellulose. The longitudinal surface plasmon resonance absorption of GNRs was used to induce mode-locking. By using the GNR-SA film, stable passive mode-locking at 1039 nm was experimentally demonstrated in an ytterbium-doped fiber laser cavity pumped by a 980 nm laser diode. The laser produced ∼440 ps pulses with a repetition rate of 36.6 MHz and an average output power of ∼1.25 mW for a pump power of ∼82 mW. (letter)

  20. Memory Effect on Adaptive Decision Making with a Chaotic Semiconductor Laser

    Directory of Open Access Journals (Sweden)

    Takatomo Mihana

    2018-01-01

    Full Text Available We investigate the effect of a memory parameter on the performance of adaptive decision making using a tug-of-war method with the chaotic oscillatory dynamics of a semiconductor laser. We experimentally generate chaotic temporal waveforms of the semiconductor laser with optical feedback and apply them for adaptive decision making in solving a multiarmed bandit problem that aims at maximizing the total reward from slot machines whose hit probabilities are dynamically switched. We examine the dependence of making correct decisions on different values of the memory parameter. The degree of adaptivity is found to be enhanced with a smaller memory parameter, whereas the degree of convergence to the correct decision is higher for a larger memory parameter. The relations among the adaptivity, environmental changes, and the difficulties of the problem are also discussed considering the requirement of past decisions. This examination of ultrafast adaptive decision making highlights the importance of memorizing past events and paves the way for future photonic intelligence.

  1. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  2. Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

    Directory of Open Access Journals (Sweden)

    R. Alexandrescu

    2008-01-01

    Full Text Available The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3 and titania (TiO2 semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron pentacarbonyl/air (as oxidizer/ethylene (as sensitizer. Temperature-dependent Mossbauer spectroscopy shows that mainly maghemite is present in the sample obtained at higher laser power. The use of selected Fe2O3 samples for the preparation of water-dispersed magnetic nanofluids is also discussed. TiO2 nanoparticles comprising a mixture of anatase and rutile phases were synthesized via the laser pyrolysis of TiCl4- (vapors based gas-phase mixtures. High precursor concentration of the oxidizer was found to favor the prevalent anatase phase (about 90% in the titania nanopowders.

  3. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

    Science.gov (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

    2017-12-01

    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  4. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    International Nuclear Information System (INIS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-01-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  5. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    Science.gov (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  6. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    International Nuclear Information System (INIS)

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.; Rosso, O. A.

    2010-01-01

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  7. Band Gap Distortion in Semiconductors Strongly Driven by Intense Mid-Infrared Laser Fields

    Science.gov (United States)

    Kono, J.; Chin, A. H.

    2000-03-01

    Crystalline solids non-resonantly driven by intense time-periodic electric fields are predicted to exhibit unusual band-gap distortion.(e.g., Y. Yacoby, Phys. Rev. 169, 610 (1968); L.C.M. Miranda, Solid State Commun. 45, 783 (1983); J.Z. Kaminski, Acta Physica Polonica A 83, 495(1993).) Such non-perturbative effects have not been observed to date because of the unavoidable sample damage due to the very high intensity required using conventional lasers ( 1 eV photon energy). Here, we report the first clear evidence of laser-induced bandgap shrinkage in semiconductors under intense mid-infrared (MIR) laser fields. The use of long-wavelength light reduces the required intensity and prohibits strong interband absorption, thereby avoiding the damage problem. The significant sub-bandgap absorption persists only during the existence of the MIR laser pulse, indicating the virtual nature of the effect. We show that this particular example of non-perturbative behavior, known as the dynamical Franz-Keldysh effect, occurs when the effective ponderomotive potential energy is comparable to the photon energy of the applied field. This work was supported by ONR, NSF, JST and NEDO.

  8. Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ren-De, E-mail: son003@sekisui.com [Research & Development Institute, High Performance Plastics Company, Sekisui Chemical Co., Ltd. 2-1 Hyakuyama, Shimamoto-Cho, Mishima-Gun, Osaka, 618-0021 (Japan); Tsuji, Takeshi [Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu-Cho, Matsue, 690-8504 (Japan)

    2015-09-01

    Highlights: • Pulsed laser ablation in liquid (LAL) was applied to prepare antimony sulfide nanoparticles (Sb{sub 2}S{sub 3} NPs). • Sb{sub 2}S{sub 3} NPs with a stoichiometric composition were successfully prepared by LAL in water without using any surfactants or capping agents. • Thus-prepared Sb{sub 2}S{sub 3} NPs showed low-temperature crystallization and melting at a temperature low as 200 °C. • The NPs-coated Sb{sub 2}S{sub 3} thin film showed comparable semiconductor properties (carrier mobility and carrier density) to the vacuum deposited one. • Byproducts such as CS{sub 2}, CH{sub 4} and CO were detected by GC-MS analysis when LAL was performed in organic solvent. • The LAL-induced decomposition mechanism of Sb{sub 2}S{sub 3} and organic solvents was discussed based on the GC-MS results. - Abstract: In this paper, we report on the synthesis of antimony sulfide (Sb{sub 2}S{sub 3}) semiconductor nanoparticles by pulsed laser ablation in liquid without using any surfactants or capping agents. Different results were obtained in water and organic solvents. In the case of water, Sb{sub 2}S{sub 3} nanoparticles with chemical compositions of stoichiometry were successfully prepared when laser irradiation was performed under the condition with the dissolved oxygen removed by argon gas bubbling. It was shown that thus-obtained Sb{sub 2}S{sub 3} nanoparticles exhibit features of not only low-temperature crystallization but also low-temperature melting at a temperature as low as 200 °C. Nanoparticle-coated Sb{sub 2}S{sub 3} thin films were found to show good visible light absorption and satisfying semiconductor properties (i.e., carrier mobility and density), which are essential for photovoltaic application. On the other hand, in the case of organic solvents (e.g., acetone, ethanol), such unexpected byproducts as CS{sub 2}, CO and CH{sub 4} were detected from the reaction system by GC-MS analysis, which suggests that both Sb{sub 2}S{sub 3} and organic

  9. Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

    Energy Technology Data Exchange (ETDEWEB)

    Yurkin, A A [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2016-03-31

    We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

  10. A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

    Science.gov (United States)

    Böhringer, Klaus; Hess, Ortwin

    The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

  11. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.

    2009-01-01

    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance...

  12. Ultrafast dynamics of laser-pulse excited semiconductors: non-Markovian quantum kinetic equations with nonequilibrium correlations

    Directory of Open Access Journals (Sweden)

    V.V.Ignatyuk

    2004-01-01

    Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.

  13. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

  14. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    catalyzed on either a copper foil or on nickel coated substrates. The graphene must be transferred off of these substrates and then on to the DBR/spacer to...properties of graphene in both the exfoliated single layer graphene (SLG) and few layer graphene (FLG) flakes . Sun et al. make use of bile salts to...semiconductors and dielectrics is the transfer of CVD graphene grown on copper foils. The graphene is grown on thin Cu-foils by CVD using methane and

  15. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  16. Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

    Science.gov (United States)

    Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

    2017-08-01

    Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

  17. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  18. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  19. 300-MHz-repetition-rate, all-fiber, femtosecond laser mode-locked by planar lightwave circuit-based saturable absorber.

    Science.gov (United States)

    Kim, Chur; Kim, Dohyun; Cheong, YeonJoon; Kwon, Dohyeon; Choi, Sun Young; Jeong, Hwanseong; Cha, Sang Jun; Lee, Jeong-Woo; Yeom, Dong-Il; Rotermund, Fabian; Kim, Jungwon

    2015-10-05

    We show the implementation of fiber-pigtailed, evanescent-field-interacting, single-walled carbon nanotube (CNT)-based saturable absorbers (SAs) using standard planar lightwave circuit (PLC) fabrication processes. The implemented PLC-CNT-SA device is employed to realize self-starting, high-repetition-rate, all-fiber ring oscillators at telecommunication wavelength. We demonstrate all-fiber Er ring lasers operating at 303-MHz (soliton regime) and 274-MHz (stretched-pulse regime) repetition-rates. The 303-MHz (274-MHz) laser centered at 1555 nm (1550 nm) provides 7.5 nm (19 nm) spectral bandwidth. After extra-cavity amplilfication, the amplified pulse train of the 303-MHz (274-MHz) laser delivers 209 fs (178 fs) pulses. To our knowledge, this corresponds to the highest repetition-rates achieved for femtosecond lasers employing evanescent-field-interacting SAs. The demonstrated SA fabrication method, which is based on well-established PLC processes, also shows a potential way for mass-producible and lower-cost waveguide-type SA devices suitable for all-fiber and waveguide lasers.

  20. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solu...