WorldWideScience

Sample records for mode-locked semiconductor laser

  1. Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

    Science.gov (United States)

    Kim, Jimyung; Delfyett, Peter J

    2008-07-21

    We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

  2. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

  3. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

  4. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  5. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

  6. Deep-red semiconductor monolithic mode-locked lasers

    International Nuclear Information System (INIS)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-01-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

  7. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order ...

  8. Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

    NARCIS (Netherlands)

    Koumans, R.G.M.P.; Roijen, van R.

    1996-01-01

    We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

  9. Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2006-01-01

    We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

  10. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Science.gov (United States)

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  11. Narrow-band modulation of semiconductor lasers at millimeter wave frequencies (7100 GHz) by mode locking

    International Nuclear Information System (INIS)

    Lau, K.Y.

    1990-01-01

    This paper reports on the possibility of mode locking a semiconductor laser at millimeter wave frequencies approaching and beyond 100 GHz which was investigated theoretically and experimentally. It is found that there are no fundamental theoretical limitations in mode locking at frequencies below 100 GHz. AT these high frequencies, only a few modes are locked and the output usually takes the form of a deep sinusoidal modulation which is synchronized in phase with the externally applied modulation at the intermodal heat frequency. This can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier over a narrow band at millimeter wave frequencies. Both active and passive mode locking are theoretically possible. Experimentally, predictions on active mode locking have been verified in prior publications up to 40 GHz. For passive mode locking, evidence consistent with passive mode locking was observed in an inhomogeneously pumped GaAIAs laser at a frequency of approximately 70 GHz. A large differential gain-absorption ratio such as that present in an inhomogeneously pumped single quantum well laser is necessary for pushing the passive mode-locking frequency beyond 100 GHz

  12. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  13. Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper; Kroh, Marcel

    2004-01-01

    We theoretically and experimentally investigate the dynamics of external-cavity mode-locked semiconductor lasers, focusing on stability properties, optimization of pulsewidth and timing jitter. A new numerical approach allows to clearly separate timing and amplitude jitter....

  14. Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

    Science.gov (United States)

    Pramod, Mysore Srinivas; Yang, Tao; Pandey, Kanhaiya; Giudici, Massimo; Wilkowski, David

    2014-07-01

    Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.

  15. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Science.gov (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  16. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

    OpenAIRE

    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

    2004-01-01

    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  17. Squeezing in an injection-locked semiconductor laser

    Science.gov (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

    1993-09-01

    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  18. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  19. Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

    International Nuclear Information System (INIS)

    Smetanin, Igor V; Vasil'ev, Petr P

    2009-01-01

    Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated. (control of laser radiation parameters)

  20. Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

    Science.gov (United States)

    Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

    2012-04-15

    A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

  1. Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    International Nuclear Information System (INIS)

    Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2005-01-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

  2. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin

    2004-01-01

    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  3. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  4. InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

    Science.gov (United States)

    Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

    2018-02-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

  5. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

    Science.gov (United States)

    Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

    2017-11-01

    We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

  6. Optical double-locked semiconductor lasers

    Science.gov (United States)

    AlMulla, Mohammad

    2018-06-01

    Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

  7. An ultra-long cavity passively mode-locked fiber laser based on nonlinear polarization rotation in a semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Liu, Tonghui; Jia, Dongfang; Yang, Jingwen; Chen, Jiong; Wang, Zhaoying; Yang, Tianxin

    2013-01-01

    In this paper we investigate an ultra-long cavity passively mode-locked fiber laser based on a semiconductor optical amplifier (SOA). Experimental results are presented which indicate that stable mode-locked pulses can be obtained by combining nonlinear polarization rotation (NPR) in the SOA with a polarization controller. By adding a 4 km single mode fiber into the ring cavity, a stable fundamental-order mode-locked pulse train with a repetition rate of 50.72 kHz is generated through the NPR effect in the SOA. The central wavelength, 3 dB bandwidth and single pulse energy of the output pulse are 1543.95 nm, 1.506 nm and 33.12 nJ, respectively. Harmonic mode-locked pulses are also observed in experiments when the parameters are chosen properly. (paper)

  8. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-01-01

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  9. An automatic mode-locked system for passively mode-locked fiber laser

    Science.gov (United States)

    Li, Sha; Xu, Jun; Chen, Guoliang; Mei, Li; Yi, Bo

    2013-12-01

    This paper designs and implements one kind of automatic mode-locked system. It can adjust a passively mode-locked fiber laser to keep steady mode-locked states automatically. So the unsteadiness of traditional passively mode-locked fiber laser can be avoided. The system transforms optical signals into electrical pulse signals and sends them into MCU after processing. MCU calculates the frequency of the signals and judges the state of the output based on a quick judgment algorithm. A high-speed comparator is used to check the signals and the comparison voltage can be adjusted to improve the measuring accuracy. Then by controlling two polarization controllers at an angle of 45degrees to each other, MCU extrudes the optical fibers to change the polarization until it gets proper mode-locked output. So the system can continuously monitor the output signal and get it back to mode-locked states quickly and automatically. States of the system can be displayed on the LCD and PC. The parameters of the steady mode-locked states can be stored into an EEPROM so that the system will get into mode-locked states immediately next time. Actual experiments showed that, for a 6.238MHz passively mode-locked fiber lasers, the system can get into steady mode-locked states automatically in less than 90s after starting the system. The expected lock time can be reduced to less than 20s after follow up improvements.

  10. Self-stabilization of a mode-locked femtosecond fiber laser using a photonic bandgap fiber

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2010-01-01

    We demonstrate a self-stabilization mechanism of a semiconductor saturable absorber mode-locked linearcavity Yb-doped fiber laser using an intracavity photonic bandgap fiber. This mechanism relies on the spectral shift of the laser pulses to a spectral range of higher anomalous dispersion...... and higher loss of the photonic bandgap fiber, as a reaction to the intracavity power buildup. This, in particular, results in a smaller cavity loss for the stably mode-locked laser, as opposed to the Q-switched mode-locking scenario. The laser provides stable 39–49 pJ pulses of around 230 fs duration at 29...

  11. Short pulse generation in a passively mode-locked photonic crystal semiconductor laser

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties......We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties...

  12. Terahertz-bandwidth coherence measurements of a quantum dash laser in passive and active mode-locking operation.

    Science.gov (United States)

    Martin, Eamonn; Watts, Regan; Bramerie, Laurent; Shen, Alexandre; Gariah, Harry; Blache, Fabrice; Lelarge, Francois; Barry, Liam

    2012-12-01

    This research carries out coherence measurements of a 42.7 GHz quantum dash (QDash) semiconductor laser when passively, electrically, and optically mode-locked. Coherence of the spectral lines from the mode-locked laser is determined by examining the radio frequency beat-tone linewidth as the mode spacing is increased up to 1.1 THz. Electric-field measurements of the QDash laser are also presented, from which a comparison between experimental results and accepted theory for coherence in passively mode-locked lasers has been performed.

  13. Dynamics of temporally localized states in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Schelte, C.; Javaloyes, J.; Gurevich, S. V.

    2018-05-01

    We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

  14. Quantum dash based single section mode locked lasers for photonic integrated circuits.

    Science.gov (United States)

    Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

    2014-05-05

    We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

  15. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  16. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  17. Heterogeneous Silicon III-V Mode-Locked Lasers

    Science.gov (United States)

    Davenport, Michael Loehrlein

    Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

  18. Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

    International Nuclear Information System (INIS)

    Shi, L W; Chen, Y H; Xu, B; Wang, Z C; Jiao, Y H; Wang, Z G

    2007-01-01

    In this review, the potential of mode-locked lasers based on advanced quantum-dot (QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects. (topical review)

  19. InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

    2018-02-01

    A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

  20. A mode-locked external-cavity quantum-dot laser with a variable repetition rate

    International Nuclear Information System (INIS)

    Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

    2013-01-01

    A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  1. Delay differential equations for mode-locked semiconductor lasers.

    Science.gov (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory

    2004-06-01

    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  2. Single-mode Brillouin fiber laser passively stabilized at resonance frequency with self-injection locked pump laser

    International Nuclear Information System (INIS)

    Spirin, V V; Lopez-Mercado, C A; Megret, P; Fotiadi, A A

    2012-01-01

    We demonstrate a single-mode Brillouin fiber ring laser, which is passively stabilized at pump resonance frequency by using self-injection locking of semiconductor pump laser. Resonance condition for Stokes radiation is achieved by length fitting of Brillouin laser cavity. The laser generate single-frequency Stokes wave with linewidth less than 0.5 kHz using approximately 17-m length cavity

  3. Delay induced high order locking effects in semiconductor lasers

    Science.gov (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

    2017-11-01

    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  4. Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser.

    Science.gov (United States)

    Kéfélian, Fabien; O'Donoghue, Shane; Todaro, Maria Teresa; McInerney, John; Huyet, Guillaume

    2009-04-13

    We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.

  5. Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Hvam, Jørn Märcher

    2005-01-01

    We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design......-QW laser. There is good agreement between the measured results and existing theory....

  6. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    Science.gov (United States)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  7. Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

    Science.gov (United States)

    Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

    2018-02-01

    Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

  8. Class-A mode-locked lasers: Fundamental solutions

    Science.gov (United States)

    Kovalev, Anton V.; Viktorov, Evgeny A.

    2017-11-01

    We consider a delay differential equation (DDE) model for mode-locked operation in class-A semiconductor lasers containing both gain and absorber sections. The material processes are adiabatically eliminated as these are considered fast in comparison to the delay time for a long cavity device. We determine the steady states and analyze their bifurcations using DDE-BIFTOOL [Engelborghs et al., ACM Trans. Math. Software 28, 1 (2002)]. Multiple forms of coexistence, transformation, and hysteretic behavior of stable steady states and fundamental periodic regimes are discussed in bifurcation diagrams.

  9. Control of fibre laser mode-locking by narrow-band Bragg gratings

    International Nuclear Information System (INIS)

    Laegsgaard, J

    2008-01-01

    The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

  10. Mode-locked silicon evanescent lasers.

    Science.gov (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

    2007-09-03

    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  11. Laser dynamics of asynchronous rational harmonic mode-locked fiber soliton lasers

    International Nuclear Information System (INIS)

    Jyu, Siao-Shan; Jiang, Guo-Hao; Lai, Yinchieh

    2013-01-01

    Laser dynamics of asynchronous rational harmonic mode-locked (ARHM) fiber soliton lasers are investigated in detail. In particular, based on the unique laser dynamics of asynchronous mode-locking, we have developed a new method for determining the effective active modulation strength in situ for ARHM lasers. By measuring the magnitudes of the slowly oscillating pulse timing position and central frequency, the effective phase modulation strength at the multiplication frequency of rational harmonic mode-locking can be accurately inferred. The method can be a very useful tool for developing ARHM fiber lasers. (paper)

  12. Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina; Larsson, David; Semenova, Elizaveta

    2012-01-01

    We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.......We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated....

  13. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  14. Device geometry considerations for ridge waveguide quantum dot mode-locked lasers

    International Nuclear Information System (INIS)

    Mee, J K; Raghunathan, R; Lester, L F; Wright, J B

    2014-01-01

    Quantum dot mode-locked lasers have emerged as a leading source for the efficient generation of high-quality optical pulses from a compact package, attracting considerable attention for support of multiple high-speed applications, owing to characteristics such as low noise operation and high pulse peak power, in addition to the ability to multiplex the output pulse train in temporal and frequency domains in order to obtain hundreds of GHz pulse repetition rates potentially operating at 1 Tbps. This topical review provides a detailed explanation into the primary advantages of quantum dots, identifying the key features that have made them superior to other material systems for passive mode-locking in semiconductor lasers. Following this account, the impact of the device's cavity geometry on the operational range of two-section, monolithic passively mode-locked lasers is investigated both experimentally and analytically. A model is described that predicts regimes of pulsed operation as a function of absorber length to gain length ratio. Experimental measurements of the pulse time-domain characteristics over a wide range of operating temperatures are found to be in excellent agreement with analytical predictions. The impact of ridge waveguide design on the operational range is also examined and the key dimensions that most strongly impact efficient operation are identified. (topical review)

  15. Actively mode-locked diode laser with a mode spacing stability of ∼6 × 10{sup -14}

    Energy Technology Data Exchange (ETDEWEB)

    Zakharyash, V F; Kashirsky, A V; Klementyev, V M [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-10-31

    We have studied mode spacing stability in an actively mode-locked external-cavity semiconductor laser. It has been shown that, in the case of mode spacing pulling to the frequency of a highly stable external microwave signal produced by a hydrogen standard (stability of 4 × 10{sup -14} over an averaging period τ = 10 s), this configuration ensures a mode spacing stability of 5.92 × 10{sup -14} (τ = 10 s). (control of radiation parameters)

  16. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    International Nuclear Information System (INIS)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun

    2008-01-01

    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms

  17. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

    2008-11-15

    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms.

  18. Mode structure of delay-coupled semiconductor lasers: influence of the pump current

    International Nuclear Information System (INIS)

    Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

    2005-01-01

    We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

  19. Three-dimensional graphene based passively mode-locked fiber laser.

    Science.gov (United States)

    Yang, Y; Loeblein, M; Tsang, S H; Chow, K K; Teo, E H T

    2014-12-15

    We present an all-fiber passively mode-locked fiber laser incorporating three-dimensional (3D) graphene as a saturable absorber (SA) for the first time to the best of our knowledge. The 3D graphene is synthesized by template-directed chemical vapor deposition (CVD). The SA is then simply formed by sandwiching the freestanding 3D graphene between two conventional fiber connectors without any deposition process. It is demonstrated that such 3D graphene based SA is capable to produce high quality mode-locked pulses. A passively mode-locked fiber laser is constructed and stable output pulses with a fundamental repetition rate of ~9.9 MHz and a pulse width of ~1 ps are generated from the fiber laser. The average output power of the laser is ~10.5 mW while the output pulse is operating at single pulse region. The results imply that the freestanding 3D graphene can be applied as an effective saturable absorption material for passively mode-locked lasers.

  20. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  1. Modeling of mode-locked coupled-resonator optical waveguide lasers

    DEFF Research Database (Denmark)

    Agger, Christian; Skovgård, Troels Suhr; Gregersen, Niels

    2010-01-01

    Coupled-resonator optical waveguides made from coupled high-Q photonic crystal nanocavities are investigated for use as cavities in mode-locked lasers. Such devices show great potential in slowing down light and can serve to reduce the cavity length of a mode-locked laser. An explicit expression...... of the emerging pulse train. A range of tuning around this frequency allows for effective mode locking. Finally, noise is added to the generalized single-cavity eigenfrequencies in order to evaluate the effects of fabrication imperfections on the cold-cavity transmission properties and consequently on the locking...

  2. Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser

    International Nuclear Information System (INIS)

    Wu Yan-Hua; Jian Wu; Jin Peng; Wang Fei-Fei; Hu Fa-Jie; Wei Heng; Wang Zhan-Guo

    2015-01-01

    A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm (from 1137.3 nm to 1182.8 nm) under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ. (paper)

  3. Colliding Pulse Mode-Locked Laser Diode using Multimode Interference Reflectors

    NARCIS (Netherlands)

    Gordon Gallegos, Carlos; Guzmán, R.C.; Jimenez, A.; Leijtens, X.J.M.; Carpintero, G.

    2014-01-01

    We present a novel fully monolithic Colliding Pulse Mode-Locked Laser Diode (CPML) using Multimode Interference Reflectors (MMIRs) to create the laser resonator. We demonstrate experimentally for the first time to our knowledge the Colliding Pulse mode-locking of a laser using MMIRs by observation

  4. Self-mode-locked Nd3+:YAG laser

    International Nuclear Information System (INIS)

    Komarov, A K; Komarov, K P; Kuch'yanov, Aleksandr S

    2003-01-01

    Self-mode-locking was observed in a Nd 3+ :YAG laser with a negative feedback without introducing any nonlinear elements into the laser cavity. The laser generates during pumping 300 - 500-ps single pulses on an axial period. (lasers)

  5. Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers.

    Science.gov (United States)

    Eigenwillig, Christoph M; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R; Klein, Thomas; Jirauschek, Christian; Huber, Robert

    2013-01-01

    Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

  6. Mode-locked solid state lasers using diode laser excitation

    Science.gov (United States)

    Holtom, Gary R [Boston, MA

    2012-03-06

    A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

  7. Mode locking of Yb:GdYAG ceramic lasers with an isotropic cavity

    International Nuclear Information System (INIS)

    Xu, C W; Tang, D Y; Zhu, H Y; Zhang, J

    2013-01-01

    We report on the passive mode locking of a diode pumped Yb:GdYAG ceramic laser with a near isotropic cavity. It is found that the laser could simultaneously mode lock in the two orthogonal principal polarization directions of the cavity, and the mode locked pulses of the two polarizations have identical features and are temporally perfectly synchronized. However, their pulse energy varies out-of-phase periodically, manifesting the antiphase dynamics of mode locked lasers. (letter)

  8. Active mode locking of quantum cascade lasers in an external ring cavity.

    Science.gov (United States)

    Revin, D G; Hemingway, M; Wang, Y; Cockburn, J W; Belyanin, A

    2016-05-05

    Stable ultrashort light pulses and frequency combs generated by mode-locked lasers have many important applications including high-resolution spectroscopy, fast chemical detection and identification, studies of ultrafast processes, and laser metrology. While compact mode-locked lasers emitting in the visible and near infrared range have revolutionized photonic technologies, the systems operating in the mid-infrared range where most gases have their strong absorption lines, are bulky and expensive and rely on nonlinear frequency down-conversion. Quantum cascade lasers are the most powerful and versatile compact light sources in the mid-infrared range, yet achieving their mode-locked operation remains a challenge, despite dedicated effort. Here we report the demonstration of active mode locking of an external-cavity quantum cascade laser. The laser operates in the mode-locked regime at room temperature and over the full dynamic range of injection currents.

  9. Instantaneous lineshape analysis of Fourier domain mode-locked lasers.

    Science.gov (United States)

    Todor, Sebastian; Biedermann, Benjamin; Wieser, Wolfgang; Huber, Robert; Jirauschek, Christian

    2011-04-25

    We present a theoretical and experimental analysis of the instantaneous lineshape of Fourier domain mode-locked (FDML) lasers, yielding good agreement. The simulations are performed employing a recently introduced model for FDML operation. Linewidths around 10 GHz are found, which is significantly below the sweep filter bandwidth. The effect of detuning between the sweep filter drive frequency and cavity roundtrip time is studied revealing features that cannot be resolved in the experiment, and shifting of the instantaneous power spectrum against the sweep filter center frequency is analyzed. We show that, in contrast to most other semiconductor based lasers, the instantaneous linewidth is governed neither by external noise sources nor by amplified spontaneous emission, but it is directly determined by the complex FDML dynamics.

  10. Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

    Science.gov (United States)

    Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

    2018-01-01

    We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

  11. 18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

    2017-10-01

    We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

  12. Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers.

    Science.gov (United States)

    Tandoi, Giuseppe; Ironside, Charles N; Marsh, John H; Bryce, A Catrina

    2012-03-01

    We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.

  13. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    International Nuclear Information System (INIS)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D.; Posilović, K.; Pohl, J.; Weyers, M.

    2014-01-01

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm −2  sr −1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  14. Diode-pumped passively mode-locked sub-picosecond Yb:LuAG ceramic laser

    International Nuclear Information System (INIS)

    Zhu Jiang-Feng; Liu Kai; Wang Jun-Li; Yang Yu; Wang Hui-Bo; Gao Zi-Ye; Jiang Li; Xie Teng-Fei; Chao-Yu Li; Pan Yu-Bai; Wei Zhi-Yi

    2017-01-01

    In this paper the laser activities of a diode-pumped Yb:LuAG ceramic which was prepared by the solid-state reactive sintering method were reported. The maximum output power was 1.86 W in the continuous wave (CW) laser operation, corresponding to a slope efficiency of 53.6%. The CW laser could be tuned from 1030 to 1096 nm by inserting a prism in the cavity. With the assist of a semiconductor saturable absorber mirror (SESAM), passive mode-locking was realized, delivering sub-picosecond pulses with 933 fs duration and an average power of 532 mW at a repetition rate of 90.35 MHz. (paper)

  15. High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

    International Nuclear Information System (INIS)

    Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

    2013-01-01

    We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

  16. The continuous-wave passive mode-locking operation of a diode-pumped mixed Nd:Lu0.5Y0.5VO4 laser

    International Nuclear Information System (INIS)

    Huang, H-T; Xu, J-L; He, J-L; Zhang, S-Y; Xu, J-Q; Zhao, B

    2011-01-01

    We reported a continuous-wave (CW) passively mode-locked Nd:Lu 0.5 Y 0.5 VO 4 laser at 1064 nm. A partially reflective semiconductor saturable absorber mirror was exploited in the Z-typed resonator. The Nd:Lu 0.5 Y 0.5 VO 4 laser generated CW mode-locked pulses with an average output power of 860 mW, a repetition rate of 53.7 MHz, and a pulse duration of 8.7 ps

  17. Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

    International Nuclear Information System (INIS)

    Liu, Yuanshan; Zhang, Jian-Guo; Chen, Guofu; Zhao, Wei; Bai, Jing

    2010-01-01

    We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 µm wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice

  18. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic......Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  19. Scaling Fiber Lasers to Large Mode Area: An Investigation of Passive Mode-Locking Using a Multi-Mode Fiber.

    Science.gov (United States)

    Ding, Edwin; Lefrancois, Simon; Kutz, Jose Nathan; Wise, Frank W

    2011-01-01

    The mode-locking of dissipative soliton fiber lasers using large mode area fiber supporting multiple transverse modes is studied experimentally and theoretically. The averaged mode-locking dynamics in a multi-mode fiber are studied using a distributed model. The co-propagation of multiple transverse modes is governed by a system of coupled Ginzburg-Landau equations. Simulations show that stable and robust mode-locked pulses can be produced. However, the mode-locking can be destabilized by excessive higher-order mode content. Experiments using large core step-index fiber, photonic crystal fiber, and chirally-coupled core fiber show that mode-locking can be significantly disturbed in the presence of higher-order modes, resulting in lower maximum single-pulse energies. In practice, spatial mode content must be carefully controlled to achieve full pulse energy scaling. This paper demonstrates that mode-locking performance is very sensitive to the presence of multiple waveguide modes when compared to systems such as amplifiers and continuous-wave lasers.

  20. Mode-locking of a terahertz laser by direct phase synchronization.

    Science.gov (United States)

    Maysonnave, J; Maussang, K; Freeman, J R; Jukam, N; Madéo, J; Cavalié, P; Rungsawang, R; Khanna, S P; Linfield, E H; Davies, A G; Beere, H E; Ritchie, D A; Dhillon, S S; Tignon, J

    2012-09-10

    A novel scheme to achieve mode-locking of a multimode laser is demonstrated. Traditional methods to produce ultrashort laser pulses are based on modulating the cavity gain or losses at the cavity roundtrip frequency, favoring the pulsed emission. Here, we rather directly act on the phases of the modes, resulting in constructive interference for the appropriated phase relationship. This was performed on a terahertz quantum cascade laser by multimode injection seeding with an external terahertz pulse, resulting in phase mode-locked terahertz laser pulses of 9 ps duration, characterized unambiguously in the time domain.

  1. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Posilović, K. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

    2014-10-20

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  2. Narrow Q-switching pulse width and low mode-locking repetition rate Q-switched mode locking with a new coupled laser cavity

    International Nuclear Information System (INIS)

    Peng, J Y; Zheng, Y; Shen, J P; Shi, Y X

    2013-01-01

    An original diode-pumped Q-switched and mode-locked solid state Nd:GdVO 4 laser is demonstrated. The laser operates with double saturable absorbers and a new coupled laser cavity. The Q-switching envelope width is compressed to be about 15 ns and the mode-locking repetition rate is as low as 90 MHz. (paper)

  3. Mode locking in a bismuth fibre laser by using a SESAM

    International Nuclear Information System (INIS)

    Krylov, A A; Dvoirin, V V; Mashinsky, V M; Kryukov, P G; Okhotnikov, O G; Guina, M

    2008-01-01

    By using a semiconductor saturable-absorber mirror (SESAM) optimised for operation in the spectral range from 1100 to 1200 nm, passive mode locking is obtained in a cw bismuth-doped fibre laser. Pumping was performed by a cw ytterbium-doped fibre laser at a wavelength of 1075 nm. The operation of the laser is studied by using either a fibre Bragg grating or a loop fibre Sagnac mirror as the output resonator mirror. Stable laser pulses of duration from 50 ps to 3.5 ns, depending on the output mirror type, were generated. The pulse repetition rate was 11 MHz at a wavelength of ∼1160 nm and the maximum spectral width of 2.1 nm. The maximum average output power was 7.8 mW upon pumping by 1140 mW. (control of laser radiation parameters)

  4. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  5. Mode-locked terahertz quantum cascade laser by direct phase synchronization

    International Nuclear Information System (INIS)

    Maussang, K.; Maysonnave, J.; Jukam, N.; Freeman, J. R.; Cavalié, P.; Dhillon, S. S.; Tignon, J.; Khanna, S. P.; Linfield, E. H.; Davies, A. G.; Beere, H. E.; Ritchie, D. A.

    2013-01-01

    Mode-locking of a terahertz quantum cascade laser is achieved using multimode injection seeding. Contrary to standard methods that rely on gain modulation, here a fixed phase relationship is directly imprinted to the laser modes. In this work, we demonstrate the generation of 9 ps phase mode-locked pulses around 2.75 THz. A direct measurement of the emitted field phase shows that it results from the phase of the initial injection

  6. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  7. Self-mode-locked AlGaInP-VECSEL

    Science.gov (United States)

    Bek, R.; Großmann, M.; Kahle, H.; Koch, M.; Rahimi-Iman, A.; Jetter, M.; Michler, P.

    2017-10-01

    We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is achieved by carefully adjusting the pump spot size. For a pump power of 6.8 W, an average output power of up to 30 mW is reached at a laser wavelength of 666 nm. The pulsed emission is characterized using a fast oscilloscope and a spectrum analyzer, demonstrating stable single-pulse operation at a repetition rate of 3.5 GHz. Intensity autocorrelation measurements reveal a FWHM pulse duration of 22 ps with an additional coherence peak on top, indicating noise-like pulses. The frequency spectrum, as well as the Gaussian beam profile and the measured beam propagation factor below 1.1, shows no influence of higher order transverse modes contributing to the mode-locked operation.

  8. A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

    International Nuclear Information System (INIS)

    Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng

    2011-01-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

  9. Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

    International Nuclear Information System (INIS)

    Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A

    2006-01-01

    A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)

  10. Monolithic mode-locked lasers with deeply dry etched Bragg mirror

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    Background: Semiconductor mode-locked lasers are attractive as components in futureultra high-speed telecommunication systems (160-640Gb/s); as picosecond pulse sources,clock-recovery devices and for demultiplexing in Optical Time Division Multiplexing(OTDM) systems. We have recently designed...... it possible to buy epitaxial wafers fromphotonic foundries as in the microelectronic industry.Design: The reflectivity spectrum from the total grating is calculated by matrixmultiplication of the individual periodic grating elements. The period of the grating,given by the mean effective index of the low....... The SiO2-film functions as a mask in the subsequent RIE of thesemiconductor (InP). We are now optimizing the semiconductor RIE to achieve 2 µmdeep waveguides and gratings with smooth vertical sidewalls and smooth bottom surface.This optimization involves optimizing the reaction chamber parameters: CH4/H2...

  11. Dispersion engineering of mode-locked fibre lasers

    Science.gov (United States)

    Woodward, R. I.

    2018-03-01

    Mode-locked fibre lasers are important sources of ultrashort pulses, where stable pulse generation is achieved through a balance of periodic amplitude and phase evolutions. A range of distinct cavity pulse dynamics have been revealed, arising from the interplay between dispersion and nonlinearity in addition to dissipative processes such as filtering. This has led to the discovery of numerous novel operating regimes, offering significantly improved laser performance. In this Topical Review, we summarise the main steady-state pulse dynamics reported to date through cavity dispersion engineering, including average solitons, dispersion-managed solitons, dissipative solitons, giant-chirped pulses and similaritons. Characteristic features and the stabilisation mechanism of each regime are described, supported by numerical modelling, in addition to the typical performance and limitations. Opportunities for further pulse energy scaling are discussed, in addition to considering other recent advances including automated self-tuning cavities and fluoride-fibre-based mid-infrared mode-locked lasers.

  12. Laser-diode pumped self-mode-locked praseodymium visible lasers with multi-gigahertz repetition rate.

    Science.gov (United States)

    Zhang, Yuxia; Yu, Haohai; Zhang, Huaijin; Di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

    2016-06-15

    We demonstrate efficient laser-diode pumped multi-gigahertz (GHz) self-mode-locked praseodymium (Pr3+) visible lasers with broadband spectra from green to deep red for the first time to our knowledge. With a Pr3+-doped GdLiF4 crystal, stable self-mode-locked visible pulsed lasers at the wavelengths of 522 nm, 607 nm, 639 nm, and 720 nm have been obtained with the repetition rates of 2.8 GHz, 3.1 GHz, 3.1 GHz, and 3.0 GHz, respectively. The maximum output power was 612 mW with the slope efficiency of 46.9% at 639 nm. The mode-locking mechanism was theoretically analyzed. The stable second-harmonic mode-locking with doubled repetition frequency was also realized based on the Fabry-Perot effect formed in the laser cavity. In addition, we find that the polarization directions were turned with lasing wavelengths. This work may provide a new way for generating efficient ultrafast pulses with high- and changeable-repetition rates in the visible range.

  13. Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Habruseva, T. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland); Aston University, Aston Triangle, B4 7ET Birmingham (United Kingdom); Arsenijević, D.; Kleinert, M.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Huyet, G.; Hegarty, S. P. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland)

    2014-01-13

    Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively.

  14. Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

    International Nuclear Information System (INIS)

    Habruseva, T.; Arsenijević, D.; Kleinert, M.; Bimberg, D.; Huyet, G.; Hegarty, S. P.

    2014-01-01

    Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively

  15. Active stabilization of a diode laser injection lock.

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  16. Characteristics and instabilities of mode-locked quantum-dot diode lasers.

    Science.gov (United States)

    Li, Yan; Lester, Luke F; Chang, Derek; Langrock, Carsten; Fejer, M M; Kane, Daniel J

    2013-04-08

    Current pulse measurement methods have proven inadequate to fully understand the characteristics of passively mode-locked quantum-dot diode lasers. These devices are very difficult to characterize because of their low peak powers, high bandwidth, large time-bandwidth product, and large timing jitter. In this paper, we discuss the origin for the inadequacies of current pulse measurement techniques while presenting new ways of examining frequency-resolved optical gating (FROG) data to provide insight into the operation of these devices. Under the assumptions of a partial coherence model for the pulsed laser, it is shown that simultaneous time-frequency characterization is a necessary and sufficient condition for characterization of mode-locking. Full pulse characterization of quantum dot passively mode-locked lasers (QD MLLs) was done using FROG in a collinear configuration using an aperiodically poled lithium niobate waveguide-based FROG pulse measurement system.

  17. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  18. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  19. Discretely tunable micromachined injection-locked lasers

    International Nuclear Information System (INIS)

    Cai, H; Yu, M B; Lo, G Q; Kwong, D L; Zhang, X M; Liu, A Q; Liu, B

    2010-01-01

    This paper reports a micromachined injection-locked laser (ILL) to provide tunable discrete wavelengths. It utilizes a non-continuously tunable laser as the master to lock a Fabry–Pérot semiconductor laser chip. Both lasers are integrated into a deep-etched silicon chip with dimensions of 3 mm × 3 mm × 0.8 mm. Based on the experimental results, significant improvements in the optical power and spectral purity have been achieved in the fully locked state, and optical hysteresis and bistability have also been observed in response to the changes of the output wavelength and optical power of the master laser. As a whole system, the micromachined ILL is able to provide single mode, discrete wavelength tuning, high power and direct modulation with small size and single-chip solution, making it promising for advanced optical communications such as wavelength division multiplexing optical access networks.

  20. The transient evolution of AM mode locking a TEA CO2laser

    NARCIS (Netherlands)

    van Goor, F.A.; Bonnie, Ronald J.M.; Witteman, W.J.

    1985-01-01

    The evolution of the pulse in an AM mode-locked TEA CO2laser has been investigated. The experiments have been performed by injecting the mode-locked pulses in a high-pressure slave oscillator at various time intervals after the initiation of the mode-lock process. This technique allows the

  1. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  2. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  3. Color center lasers passively mode locked by quantum wells

    International Nuclear Information System (INIS)

    Islam, M.N.; Soccolich, C.E.; Bar-Joseph, I.; Sauer, N.; Chang, T.Y.; Miller, B.I.

    1989-01-01

    This paper describes how, using multiple quantum well (MQW) saturable absorbers, the authors passively mode locked a NaCl color center laser to produce 275 fs transform-limited, pedestal-free pulses with as high as 3.7 kW peak power. The pulses are tunable from λ = 1.59 to 1.7 μm by choosing MQW's with different bandgaps. They shortened the output pulses from the laser to 25 fs using the technique of soliton compression in a fiber. The steady-state operation of the laser requires the combination of a fast saturable absorber and gain saturation. In addition to the NaCl laser, they passively mode locked a Tl 0 (1):KCl color center laser and produced -- 22 ps pulses. Although the 275 fs pulses from the NaCl laser are Gaussian, when broadened, the pulses acquire an asymmetric spectrum because of carrier-induced refractive index changes

  4. Multi-operational tuneable Q-switched mode-locking Er fibre laser

    Science.gov (United States)

    Qamar, F. Z.

    2018-01-01

    A wavelength-spacing tuneable, Q-switched mode-locking (QML) erbium-doped fibre laser based on non-linear polarization rotation controlled by four waveplates and a cube polarizer is proposed. A mode-locked pulse train using two quarter-wave plates and a half-wave plate (HWP) is obtained first, and then an extra HWP is inserted into the cavity to produce different operation regimes. The evolutions of temporal and spectral dynamics with different orientation angles of the extra HWP are investigated. A fully modulated stable QML pulse train is observed experimentally. This is, to the author’s best knowledge, the first experimental work reporting QML operation without adding an extra saturable absorber inside the laser cavity. Multi-wavelength pulse laser operation, multi-pulse train continuous-wave mode-locking operation and pulse-splitting operations are also reported at certain HWP angles. The observed operational dynamics are interpreted as a mutual interaction of dispersion, non-linear effect and insertion loss. This work provides a new mechanism for fabricating cheap tuneable multi-wavelength lasers with QML pulses.

  5. A net normal dispersion all-fiber laser using a hybrid mode-locking mechanism

    International Nuclear Information System (INIS)

    Xu, Bo; Martinez, Amos; Yamashita, Shinji; Set, Sze Yun; Goh, Chee Seong

    2014-01-01

    We propose and demonstrate an all-fiber, dispersion-mapped, erbium-doped fiber laser with net normal dispersion generating dissipative solitons. The laser is mode-locked by a hybrid mode-locking mechanism consisting of a nonlinear amplifying loop mirror and a carbon nanotube saturable absorber. We achieve self-starting, mode-locked operation generating 2.75 nJ pulses at a fundamental repetition rate of 10.22 MHz with remarkable long term stability. (letter)

  6. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications

    International Nuclear Information System (INIS)

    Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 10 5 , −1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on–off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of −17 and −15.2 dBm at a bit error rate of 10 −9 , respectively. (paper)

  7. Diode-pumped passively mode-locked composite crystal Nd:Lu0.15Y0.85VO4 laser at 1342.2 nm

    International Nuclear Information System (INIS)

    Qiao, Wenchao; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian; Li, Tao; Zhao, Jia; Zhao, Bin

    2015-01-01

    A diode-pumped mode-locked Nd:Lu 0.15 Y 0.85 VO 4 laser running at 1342.2 nm is firstly demonstrated with a semiconductor saturable absorber mirror (SESAM). Stable mode-locking pulses with the pulse-duration of 15.2 ps and the repetition rate of 32.8 MHz have been achieved. With a pumping power of 7.1 W, an output power of 786 mW was obtained, corresponding to an optical conversion efficiency of 11%. A maximum mode-locked pulse energy was estimated to be 23.96 nJ with a peak power of 1.58 kW. (paper)

  8. Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum.

    Science.gov (United States)

    Heck, Martijn J R; Bente, Erwin A J M; Smalbrugge, Barry; Oei, Yok-Siang; Smit, Meint K; Anantathanasarn, Sanguan; Nötzel, Richard

    2007-12-10

    First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.

  9. Modes in light wave propagating in semiconductor laser

    Science.gov (United States)

    Manko, Margarita A.

    1994-01-01

    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  10. An actively mode-locked Ho: YAG solid laser pumped by a Tm: YLF laser

    International Nuclear Information System (INIS)

    Yao, B Q; Cui, Z; Wang, J; Duan, X M; Dai, T Y; Du, Y Q; Yuan, J H; Liu, W

    2015-01-01

    A continuous wave mode-locked (CWML) Ho: YAG laser based on an acousto-optic modulator (AOM) pumped by a 1.9 μm Tm: YLF laser is demonstrated. This is the first time a report on an active CWML Ho: YAG laser has been published. A maximum output power of 1.04 W at 2097.25 nm in the CWML regime is obtained at a pump power of 13.2 W, corresponding to a slope efficiency of 13.3%. The mode-locked pulse repetition frequency is 82.76 MHz and the single pulse energy is 12.57 nJ. The mode-locked pulse width is 102 ps measured through a no-background second harmonic autocorrelation with KTP as the nonlinear crystal. Furthermore, the M 2 factor is calculated to be 1.146. (letter)

  11. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2003-01-01

    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW....

  12. 532 nm continuous wave mode-locked Nd:GdVO4 laser with SESAM

    International Nuclear Information System (INIS)

    Li, L; Liu, J; Liu, M; Liu, S; Chen, F; Wang, W; Wang, Y

    2009-01-01

    We obtain continuous wave mode-locked Nd:GdVO 4 -KTP laser with a SESAM. This is the first report of CW mode-locked Nd:GdVO 4 -KTP laser with a SESAM to our knowledge. 396 mw CW mode-locked pulse is achieved at the incident power of 7.653 W, with the repetition about 95 MHz. The pulse duration is assumed to be 5.5 ps, this is the shortest green pulse of 532 nm with SESAM

  13. Active stabilization of a diode laser injection lock

    Energy Technology Data Exchange (ETDEWEB)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

    2016-06-15

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  14. Active stabilization of a diode laser injection lock

    International Nuclear Information System (INIS)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  15. Dynamics of a broad-band quantum cascade laser: from chaos to coherent dynamics and mode-locking

    Science.gov (United States)

    Columbo, L. L.; Barbieri, S.; Sirtori, C.; Brambilla, M.

    2018-02-01

    The dynamics of a multimode Quantum Cascade Laser, is studied in a model based on effective semiconductor Maxwell-Bloch equations, encompassing key features for the radiationmedium interaction such as an asymmetric, frequency dependent, gain and refractive index as well as the phase-amplitude coupling provided by the Henry factor. By considering the role of the free spectral range and Henry factor, we develop criteria suitable to identify the conditions which allow to destabilize, close to threshold, the traveling wave emitted by the laser and lead to chaotic or regular multimode dynamics. In the latter case our simulations show that the field oscillations are associated to self-confined structures which travel along the laser cavity, bridging mode-locking and solitary wave propagation. In addition, we show how a RF modulation of the bias current leads to active mode-locking yielding high-contrast, picosecond pulses. Our results compare well with recent experiments on broad-band THz-QCLs and may help understanding the conditions for the generation of ultrashort pulses and comb operation in Mid-IR and THz spectral regions

  16. Pulse-shaping mechanism in colliding-pulse mode-locked laser diodes

    DEFF Research Database (Denmark)

    Bischoff, Svend; Sørensen, Mads Peter; Mørk, J.

    1995-01-01

    The large signal dynamics of passively colliding pulse mode-locked laser diodes is studied. We derive a model which explains modelocking via the interplay of gain and loss dynamics; no bandwidth limiting element is necessary for pulse formation. It is found necessary to have both fast and slow...... absorber dynamics to achieve mode-locking. Significant chirp is predicted for pulses emitted from long lasers, in agreement with experiment. The pulse width shows a strong dependence on both cavity and saturable absorber length. (C) 1995 American Institute of Physics....

  17. Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

    Science.gov (United States)

    Lagatsky, A A; Fusari, F; Calvez, S; Gupta, J A; Kisel, V E; Kuleshov, N V; Brown, C T A; Dawson, M D; Sibbett, W

    2009-09-01

    We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.

  18. Independent tunability of the double-mode-locked cw dye laser.

    LENUS (Irish Health Repository)

    Bourkoff, E

    1979-06-01

    We report a new configuration that enables the double-mode-locked cw dye laser to be independently tunable. In addition, the output coupling at each of the two wavelengths can be independently specified. A series of oscillographs shows some interesting features unique to double mode locking and also shows the effects of varying the two cavity lengths with respect to each other.

  19. The study of 80 MHz self starting passively mode-locked Erbium-Doped Fiber Laser via nonlinear polarization rotation with SESAM

    International Nuclear Information System (INIS)

    Qamar, F.

    2013-01-01

    Erbium-Doped Fiber Laser, EDF L, passively mode-locked via only Nonlinear Polarization Rotation, NPR, and via NPR with Semiconductor Saturable Absorber Mirror, SESAM, is studied. Self start single pulse train with pulse width of 114 fs and repetition rate (PRR) of 80 MHz has been obtained when 55 cm EDFL, passively mode-locked via NPR only. Inserting SESAM in EDFL cavity leads to shorten the pulse width up to 88 fs, increases the amplitude stability up to 96% and lower the phase noise jittering to around 26 fsec. Stable second harmonic self starting passively mode-locked EDFL with pulse width of 284 fs has also been observed only when SESAM was used in the cavity. Multi-pulsed system passively mode-locked via NPR for EDFL length of 80 cm with time difference between the successive multi-pulses ranged from few picoseconds to nanoseconds, has been observed. The time difference can be controlled by the polarizer controller and the half wave plate. Further controlling of the cavity polarization leads to developing the multiple mode locking pulses train to second harmonic mode-locking pulse train with PRR of 160MHz and pulse width of 156 fs. Three harmonic superposed trains of mode locked pulse have been achieved only when SESAM added to the cavity. (author)

  20. A 66 fs highly stable single wall carbon nanotube mode locked fiber laser

    International Nuclear Information System (INIS)

    Yu, Zhenhua; Zhang, Xiao; Dong, Xinzheng; Tian, Jinrong; Song, Yanrong; Wang, Yonggang

    2014-01-01

    We demonstrate a highly stable mode locked fiber laser based on single wall carbon nanotubes. The mode locking is achieved by the evanescent field interaction of the propagating light with a single wall carbon nanotube saturable absorber in a microfiber. The pulse width is 66 fs, which, to the best of our knowledge, is the shortest pulse achieved in a carbon nanotube mode locked fiber laser. The maximum average output power is 26 mW, which is about 20 times larger than that of a typical carbon nanotube mode locked fiber laser. The center of the wavelength is 1555 nm, with 54 nm spectral width. The repetition rate is 146 MHz. To investigate the laser’s stability, the output pulses are monitored for 120 h and there is no significant degradation of the laser spectral width or shape. (paper)

  1. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

    2010-01-01

    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  2. Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

    Science.gov (United States)

    Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

    2018-03-01

    We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

  3. All fiber passively mode locked zirconium-based erbium-doped fiber laser

    Science.gov (United States)

    Ahmad, H.; Awang, N. A.; Paul, M. C.; Pal, M.; Latif, A. A.; Harun, S. W.

    2012-04-01

    All passively mode locked erbium-doped fiber laser with a zirconium host is demonstrated. The fiber laser utilizes the Non-Linear Polarization Rotation (NPR) technique with an inexpensive fiber-based Polarization Beam Splitter (PBS) as the mode-locking element. A 2 m crystalline Zirconia-Yttria-Alumino-silicate fiber doped with erbium ions (Zr-Y-Al-EDF) acts as the gain medium and generates an Amplified Spontaneous Emission (ASE) spectrum from 1500 nm to 1650 nm. The generated mode-locked pulses have a spectrum ranging from 1548 nm to more than 1605 nm, as well as a 3-dB bandwidth of 12 nm. The mode-locked pulse train has an average output power level of 17 mW with a calculated peak power of 1.24 kW and energy per pulse of approximately 730 pJ. The spectrum also exhibits a Signal-to-Noise Ratio (SNR) of 50 dB as well as a repetition rate of 23.2 MHz. The system is very stable and shows little power fluctuation, in addition to being repeatable.

  4. Fabrication of a saturable absorber WS2 and its mode locking in solid-state laser

    Science.gov (United States)

    Zhang, Chun-Yu; Zhang, Ling; Tang, Xiao-Ying; Yang, Ying-Ying

    2018-04-01

    We report on a passively mode-locked Nd : LuVO4 laser using a type saturable absorber of tungsten disulfide (WS2) fabricated by chemical vapor deposition method. At the pump power of 3.3 W, 1.18-W average output power of continuous-wave mode-locked laser with optical conversion efficiency of 36% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser based on WS2. The repetition rate of passively mode-locked pulse was 80 MHz with the pulse energy of 14.8 nJ. Our experimental results show that WS2 is an excellent type of saturable absorber.

  5. Deep learning and model predictive control for self-tuning mode-locked lasers

    Science.gov (United States)

    Baumeister, Thomas; Brunton, Steven L.; Nathan Kutz, J.

    2018-03-01

    Self-tuning optical systems are of growing importance in technological applications such as mode-locked fiber lasers. Such self-tuning paradigms require {\\em intelligent} algorithms capable of inferring approximate models of the underlying physics and discovering appropriate control laws in order to maintain robust performance for a given objective. In this work, we demonstrate the first integration of a {\\em deep learning} (DL) architecture with {\\em model predictive control} (MPC) in order to self-tune a mode-locked fiber laser. Not only can our DL-MPC algorithmic architecture approximate the unknown fiber birefringence, it also builds a dynamical model of the laser and appropriate control law for maintaining robust, high-energy pulses despite a stochastically drifting birefringence. We demonstrate the effectiveness of this method on a fiber laser which is mode-locked by nonlinear polarization rotation. The method advocated can be broadly applied to a variety of optical systems that require robust controllers.

  6. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

    DEFF Research Database (Denmark)

    Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta

    2010-01-01

    This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser...

  7. Three types of pulses delivered from a nanotube-mode-locked fiber laser

    International Nuclear Information System (INIS)

    Yao, X K

    2015-01-01

    Three types of pulses are experimentally investigated in a switchable normal-dispersion nanotube-mode-locked fiber laser by adjusting polarizer controller and pump power. They are a standard dissipative-soliton (DS), conventional soliton (CS)-like pulse, and noiselike pulse, which correspond to three mode-locking states. The standard DS with a rectangular spectrum possesses a Gaussian-shape pulse. The CS-like operation has a Lorenz shape, and the spectrum involves several sidebands similar to the CS case. For the noiselike pulse with a bell-shaped spectrum, a 317 fs peak rides upon the 132.5 ps pedestal in the autocorrelation trace. The spectra of these three pulse operations are centered at three close wavelengths. The generation of three such different types of pulses in one identical normal- dispersion laser cavity may find an important application for the future of mode-locked laser research. (paper)

  8. Chaos-pass filtering in injection-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Murakami, Atsushi; Shore, K. Alan

    2005-01-01

    Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

  9. Generation of picosecond pulses and frequency combs in actively mode locked external ring cavity quantum cascade lasers

    International Nuclear Information System (INIS)

    Wójcik, Aleksander K.; Belyanin, Alexey; Malara, Pietro; Blanchard, Romain; Mansuripur, Tobias S.; Capasso, Federico

    2013-01-01

    We propose a robust and reliable method of active mode locking of mid-infrared quantum cascade lasers and develop its theoretical description. Its key element is the use of an external ring cavity, which circumvents fundamental issues undermining the stability of mode locking in quantum cascade lasers. We show that active mode locking can give rise to the generation of picosecond pulses and phase-locked frequency combs containing thousands of the ring cavity modes

  10. Common mode frequency instability in internally phase-locked terahertz quantum cascade lasers.

    Science.gov (United States)

    Wanke, M C; Grine, A D; Fuller, C T; Nordquist, C D; Cich, M J; Reno, J L; Lee, Mark

    2011-11-21

    Feedback from a diode mixer integrated into a 2.8 THz quantum cascade laser (QCL) was used to phase lock the difference frequencies (DFs) among the Fabry-Perot (F-P) longitudinal modes of a QCL. Approximately 40% of the DF power was phase locked, consistent with feedback loop bandwidth of 10 kHz and phase noise bandwidth ~0.5 MHz. While the locked DF signal has ≤ 1 Hz linewidth and negligible drift over ~30 min, mixing measurements between two QCLs and between a QCL and molecular gas laser show that the common mode frequency stability is no better than a free-running QCL. © 2011 Optical Society of America

  11. High-energy harmonic mode-locked 2 μm dissipative soliton fiber lasers

    International Nuclear Information System (INIS)

    Yang, Nan; Tang, Yulong; Xu, Jianqiu

    2015-01-01

    High-pulse-energy harmonic mode-locking in 2 μm Tm-doped fiber lasers (TDFLs) is realized, for the first time, by using a short piece of anomalous dispersion gain fiber and the dissipative soliton mode-locking mechanism. Appropriately designing the cavity dispersion map and adjusting the cavity gain, stable harmonic mode-locking of the dissipative soliton TDFL from the 2nd to the 4th order is achieved, with the pulsing repetition rates and pulse energy being 43.4, 65.1, 86.8 MHz, and 6.27, 4.32 and 3.29 nJ, respectively. The harmonic laser pulse has a pulse width of ∼30 ps and a center wavelength of ∼1929 nm with a spectral bandwidth of ∼3.26 nm, giving a highly chirped laser pulse. Two types of soliton molecules are also observed in this laser system. (letter)

  12. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    International Nuclear Information System (INIS)

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  13. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

    2018-03-01

    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  14. Investigation of monolithic passively mode-locked quantum dot lasers with extremely low repetition frequency.

    Science.gov (United States)

    Xu, Tianhong; Cao, Juncheng; Montrosset, Ivo

    2015-01-01

    The dynamical regimes and performance optimization of quantum dot monolithic passively mode-locked lasers with extremely low repetition rate are investigated using the numerical method. A modified multisection delayed differential equation model is proposed to accomplish simulations of both two-section and three-section passively mode-locked lasers with long cavity. According to the numerical simulations, it is shown that fundamental and harmonic mode-locking regimes can be multistable over a wide current range. These dynamic regimes are studied, and the reasons for their existence are explained. In addition, we demonstrate that fundamental pulses with higher peak power can be achieved when the laser is designed to work in a region with smaller differential gain.

  15. Characterization of a FBG sensor interrogation system based on a mode-locked laser scheme.

    Science.gov (United States)

    Madrigal, Javier; Fraile-Peláez, Francisco Javier; Zheng, Di; Barrera, David; Sales, Salvador

    2017-10-02

    This paper is focused on the characterization of a fiber Bragg grating (FBG) sensor interrogation system based on a fiber ring laser with a semiconductor optical amplifier as the gain medium, and an in-loop electro-optical modulator. This system operates as a switchable active (pulsed) mode-locked laser. The operation principle of the system is explained theoretically and validated experimentally. The ability of the system to interrogate an array of different FBGs in wavelength and spatial domain is demonstrated. Simultaneously, the influence of several important parameters on the performance of the interrogation technique has been investigated. Specifically, the effects of the bandwidth and the reflectivity of the FBGs, the SOA gain, and the depth of the intensity modulation have been addressed.

  16. Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser

    Science.gov (United States)

    Tu, Meirong; McKee, Michael R.; Pak, Kyung S.; Yu, Nan

    2010-01-01

    The figure schematically depicts a laboratory setup for determining the optical length of a fiber-optic delay line at a precision greater than that obtainable by use of optical time-domain reflectometry or of mechanical measurement of length during the delay-line-winding process. In this setup, the delay line becomes part of the resonant optical cavity that governs the frequency of oscillation of a mode-locked laser. The length can then be determined from frequency-domain measurements, as described below. The laboratory setup is basically an all-fiber ring laser in which the delay line constitutes part of the ring. Another part of the ring - the laser gain medium - is an erbium-doped fiber amplifier pumped by a diode laser at a wavelength of 980 nm. The loop also includes an optical isolator, two polarization controllers, and a polarizing beam splitter. The optical isolator enforces unidirectional lasing. The polarization beam splitter allows light in only one polarization mode to pass through the ring; light in the orthogonal polarization mode is rejected from the ring and utilized as a diagnostic output, which is fed to an optical spectrum analyzer and a photodetector. The photodetector output is fed to a radio-frequency spectrum analyzer and an oscilloscope. The fiber ring laser can generate continuous-wave radiation in non-mode-locked operation or ultrashort optical pulses in mode-locked operation. The mode-locked operation exhibited by this ring is said to be passive in the sense that no electro-optical modulator or other active optical component is used to achieve it. Passive mode locking is achieved by exploiting optical nonlinearity of passive components in such a manner as to obtain ultra-short optical pulses. In this setup, the particular nonlinear optical property exploited to achieve passive mode locking is nonlinear polarization rotation. This or any ring laser can support oscillation in multiple modes as long as sufficient gain is present to overcome

  17. Hysteresis phenomena and multipulse formation of a dissipative system in a passively mode-locked fiber laser

    International Nuclear Information System (INIS)

    Liu Xueming

    2010-01-01

    A model describing the dissipative soliton evolution in a passively mode-locked fiber laser is proposed by using the nonlinear polarization rotation technique and the spectral filtering effect. It is numerically found that the laser alternately evolves on the stable and unstable mode-locking states as a function of the pump strength. Numerical simulations show that the passively mode-locked fiber lasers with large net normal dispersion can operate on multiple pulse behavior and hysteresis phenomena. The experimental observations confirm the theoretical predictions. The theoretical and experimental results achieved are qualitatively distinct from those observed in net-anomalous-dispersion conventional-soliton fiber lasers.

  18. Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-12-29

    A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

  19. General description and understanding of the nonlinear dynamics of mode-locked fiber lasers.

    Science.gov (United States)

    Wei, Huai; Li, Bin; Shi, Wei; Zhu, Xiushan; Norwood, Robert A; Peyghambarian, Nasser; Jian, Shuisheng

    2017-05-02

    As a type of nonlinear system with complexity, mode-locked fiber lasers are known for their complex behaviour. It is a challenging task to understand the fundamental physics behind such complex behaviour, and a unified description for the nonlinear behaviour and the systematic and quantitative analysis of the underlying mechanisms of these lasers have not been developed. Here, we present a complexity science-based theoretical framework for understanding the behaviour of mode-locked fiber lasers by going beyond reductionism. This hierarchically structured framework provides a model with variable dimensionality, resulting in a simple view that can be used to systematically describe complex states. Moreover, research into the attractors' basins reveals the origin of stochasticity, hysteresis and multistability in these systems and presents a new method for quantitative analysis of these nonlinear phenomena. These findings pave the way for dynamics analysis and system designs of mode-locked fiber lasers. We expect that this paradigm will also enable potential applications in diverse research fields related to complex nonlinear phenomena.

  20. Diode-Pumped Mode-Locked LiSAF Laser; FINAL

    International Nuclear Information System (INIS)

    None

    1996-01-01

    Under this contract we have developed Cr(sup 3+):LiSrAlF(sub 6) (Cr:LiSAF, LiSAF) mode-locked lasers suitable for generation of polarized electrons for CEBAF. As 670 nm is an excellent wavelength for optical pumping of Cr:LiSAF, we have used a LIGHTWAVE developed 670 nm diode pump module that combines the output of ten diode lasers and yields approximately 2 Watts of optical power. By the use of a diffraction limited pump beam however, it is possible to maintain a small mode size through the length of the crystal and hence extract more power from Cr:LiSAF laser. For this purpose we have developed a 1 Watt, red 660nm laser (LIGHTWAVE model 240R) which serves as an ideal pump for Cr:LiSAF and is a potential replacement of costly and less robust krypton laser. This new system is to compliment LIGHTWAVE Series 240, and is currently being considered for commercialization. Partially developed under this contract is LIGHTWAVEs product model 240 which has already been in our production lines for a few months and is commercially available. This laser produces 2 Watts of output at 532 nm using some of the same technology developed for production of the 660nm red system. It is a potential replacement for argon ion lasers and has better current and cooling requirements and is an excellent pump source for Ti:Al(sub 2)O(sub 3). Also, as a direct result of this contract we now have the capability of commercially developing a mode-locked 100MHz Cr:LiSAF system. Such a laser could be added to our 100 MHz LIGHTWAVE Series 131. The Series 131 lasers provide pico second pulses and were originally developed under another DOE SBIR. Both models of LIGHTWAVE Series 240 lasers, the fiber coupled pump module and the 100MHz LiSAF laser of Series 131 have been partially developed under this contract, and are commercially competitive products

  1. Comparison of the noise performance of 10GHz QW and QD mode-locked laser diodes

    DEFF Research Database (Denmark)

    Carpintero, Guillermo; Thompson, Mark G.; Yvind, Kresten

    2010-01-01

    This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes.......This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes....

  2. High performance mode locking characteristics of single section quantum dash lasers.

    Science.gov (United States)

    Rosales, Ricardo; Murdoch, S G; Watts, R T; Merghem, K; Martinez, Anthony; Lelarge, Francois; Accard, Alain; Barry, L P; Ramdane, Abderrahim

    2012-04-09

    Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile determining the shape of the mode locked pulses. The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.

  3. Phase locking and spectral linewidth of a two-mode terahertz quantum cascade laser

    NARCIS (Netherlands)

    Baryshev, A.; Hovenier, J.N.; Adam, A.J.L.; Kašalynas, I.; Gao, J.R.; Klaassen, T.O.; Williams, B.S.; Kumar, S.; Hu, Q.; Reno, J.L.

    2006-01-01

    We have studied the phase locking and spectral linewidth of an ? 2.7?THz quantum cascade laser by mixing its two lateral lasing modes. The beat signal at about 8?GHz is compared with a microwave reference by applying conventional phase lock loop circuitry with feedback to the laser bias current.

  4. Phase locking and spectral linewidth of a two-mode terahertz quantum cascade laser

    NARCIS (Netherlands)

    Baryshev, A.; Hovenier, J. N.; Adam, A. J. L.; Kašalynas, I.; Gao, J. R.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.

    2006-01-01

    We have studied the phase locking and spectral linewidth of an ˜2.7THz quantum cascade laser by mixing its two lateral lasing modes. The beat signal at about 8GHz is compared with a microwave reference by applying conventional phase lock loop circuitry with feedback to the laser bias current. Phase

  5. Diode-pumped Kerr-lens mode-locked femtosecond Yb:YAG ceramic laser

    Science.gov (United States)

    Zi-Ye, Gao; Jiang-Feng, Zhu; Ke, Wang; Jun-Li, Wang; Zhao-Hua, Wang; Zhi-Yi, Wei

    2016-02-01

    We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb:YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb:YAG ceramic laser with sub-100 fs pulse duration. Project supported by the National Major Scientific Instrument Development Project of China (Grant No. 2012YQ120047), the National Natural Science Foundation of China (Grant No. 61205130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140502).

  6. Active-passively mode-locked dye laser for diagnosis of laser-produced plasmas

    International Nuclear Information System (INIS)

    Teng, Y.L.; Fedosejevs, R.; Sigel, R.

    1981-03-01

    In this report an active-passively mode-locked, flashlamp-pumped dye laser for diagnosis of laser-produced plasmas is described. This dye laser system used as a pulsed light source for high-speed photography of laser-target experiments was synchronized to the ASTERIX III iodine laser pulse with better than 100 ps accuracy. The single pulse energy was 10 μJ, pulse duration less than 10 ps. In 111 shots clear shadowgrams were obtained during a total of 151 target shots, i.e. the system worked well in 74% of the shots. (orig.)

  7. Femtosecond Mode-locked Fiber Laser at 1 μm Via Optical Microfiber Dispersion Management.

    Science.gov (United States)

    Wang, Lizhen; Xu, Peizhen; Li, Yuhang; Han, Jize; Guo, Xin; Cui, Yudong; Liu, Xueming; Tong, Limin

    2018-03-16

    Mode-locked Yb-doped fiber lasers around 1 μm are attractive for high power applications and low noise pulse train generation. Mode-locked fiber lasers working in soliton and stretched-pulse regime outperform others in terms of the laser noise characteristics, mechanical stability and easy maintenance. However, conventional optical fibers always show a normal group velocity dispersion around 1 μm, leading to the inconvenience for necessary dispersion management. Here we show that optical microfibers having a large anomalous dispersion around 1 μm can be integrated into mode-locked Yb-doped fiber lasers with ultralow insertion loss down to -0.06 dB, enabling convenient dispersion management of the laser cavity. Besides, optical microfibers could also be adopted to spectrally broaden and to dechirp the ultrashort pulses outside the laser cavity, giving rise to a pulse duration of about 110 fs. We believe that this demonstration may facilitate all-fiber format high-performance ultrashort pulse generation at 1 μm and may find applications in precision measurements, large-scale facility synchronization and evanescent-field-based optical sensing.

  8. Compact and high repetition rate Kerr-lens mode-locked 532 nm Nd:YVO4 laser

    International Nuclear Information System (INIS)

    Li, Zuohan; Peng, Jiying; Yuan, Ruixia; Yao, Jianquan; Zheng, Yi; Wang, Tongtong

    2015-01-01

    A compact and feasible CW Kerr-lens-induced mode-locked 532 nm Nd:YVO 4 laser system was experimentally demonstrated for the first time with theoretical analysis. Kerr-lens mode locking with intracavity second harmonic generation provides a promising method to generate a high-repetition-rate picosecond green laser. With an incident pump power of 6 W, the average output power of mode locking was 258 mW at a high repetition rate of 1.1 GHz. (paper)

  9. Inter-comb synchronization by mode-to-mode locking

    Science.gov (United States)

    Chun, Byung Jae; Kim, Young-Jin; Kim, Seung-Woo

    2016-08-01

    Two combs of fiber femtosecond lasers are synchronized through the optical frequency reference created by injection-locking of a diode laser to a single comb mode. Maintaining a mHz-level narrow linewidth, the optical frequency reference permits two combs to be stabilized by mode-to-mode locking with a relative stability of 1.52  ×  10-16 at 10 s with a frequency slip of 2.46 mHz. This inter-comb synchronization can be utilized for applications such as dual-comb spectroscopy or ultra-short pulse synthesis without extra narrow-linewidth lasers.

  10. Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2010-01-01

    While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited output power, and the performance of high-speed Fourier domain mode-locked (FDML) lasers suffers from...

  11. Effects of resonator input power on Kerr lens mode-locked lasers

    Indian Academy of Sciences (India)

    lasers. S KAZEMPOUR, A KESHAVARZ∗ and G HONARASA. Department of Physics, Faculty of Sciences, Shiraz University of Technology, Shiraz, Iran ... Keywords. Femtosecond pulses; Kerr lens sensitivity; Kerr lens mode-locked laser. ... The optical lengths of Kerr medium with thickness d and refractive index n under.

  12. The noise of ultrashort pulse mode-locked lasers beyond the slowly varying envelope approximation

    International Nuclear Information System (INIS)

    Takushima, Y; Haus, H A; Kaertner, F X

    2004-01-01

    The zero-point fluctuations in an L-C circuit of finite Q are revisited. The zero-point energy is shown to approach the value of hbarω 0 /2 only in the limit of an infinite Q. A Fabry-Perot resonator, on the other hand, has bounded zero-point energies of its modes that are equal to hbarω n /2 for each resonance. Based on the Fabry-Perot resonator with broadband noise, we analyse the noise of an ultrafast mode-locked laser when the slowly varying envelope approximation (SVEA) is not valid. This is achieved by reinterpreting the quantized form of the master equation of mode locking as an equation of motion for the electric field rather than for the creation operator of a photon. It is found that in this formulation quantum correlations exist that are not present in the SVEA. The correlations become evident in the spectrum of the zero-point fluctuations and therefore in the background noise of the laser. This behaviour can be detected by homodyne detection of the laser output. The linewidth of the frequency comb generated by the mode-locked laser is not affected by these correlations and is given by the Schawlow-Townes linewidth of an equivalent continuous wave taking the additional intracavity loss due to the mode locking process into account

  13. Active mode-locking of mid-infrared quantum cascade lasers with short gain recovery time.

    Science.gov (United States)

    Wang, Yongrui; Belyanin, Alexey

    2015-02-23

    We investigate the dynamics of actively modulated mid-infrared quantum cascade lasers (QCLs) using space- and time-domain simulations of coupled density matrix and Maxwell equations with resonant tunneling current taken into account. We show that it is possible to achieve active mode locking and stable generation of picosecond pulses in high performance QCLs with a vertical laser transition and a short gain recovery time by bias modulation of a short section of a monolithic Fabry-Perot cavity. In fact, active mode locking in QCLs with a short gain recovery time turns out to be more robust to the variation of parameters as compared to previously studied lasers with a long gain recovery time. We investigate the effects of spatial hole burning and phase locking on the laser output.

  14. 1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

    Energy Technology Data Exchange (ETDEWEB)

    Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany); Franke, D.; Kreissl, J.; Künzel, H. [Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin (Germany)

    2015-01-19

    Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.

  15. 1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

    International Nuclear Information System (INIS)

    Sadeev, T.; Arsenijević, D.; Bimberg, D.; Franke, D.; Kreissl, J.; Künzel, H.

    2015-01-01

    Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning

  16. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

  17. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  18. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  19. Mode-locking dynamics in a quantum-dash Fabry-Pérot laser diode for packet based clock recovery applications

    NARCIS (Netherlands)

    Maldonado-Basilio, R.; Parra-Cetina, J.; Latkowski, S.; Landais, P.; Calabretta, N.

    2012-01-01

    We experimentally investigate the locking/unlocking dynamics of a mode-locked QDash laser diode for packet-based clock-recovery applications. Results show 20 ns locking times for the passively and externally synchronized mode-locking mechanisms.

  20. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

    Science.gov (United States)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

    2018-04-01

    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  1. Nonlinear High-Energy Pulse Propagation in Graded-Index Multimode Optical Fibers for Mode-Locked Fiber Lasers

    Science.gov (United States)

    2014-12-23

    power kW at nm in a C-GIMF segment in the lowest order mode ; this pulse can be ob- tained from a typical titanium –sapphire mode-locked laser . A much...single- andmulticore double- clad and PCF lasers . He was a Senior Research Scientist at Corning Inc. from 2005 to 2008. He is currently an Assistant...High-Energy Pulse Propagation in Graded-Index Multimode Optical Fibers for Mode-Locked Fiber Lasers 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-12-1

  2. Correlation coefficient measurement of the mode-locked laser tones using four-wave mixing.

    Science.gov (United States)

    Anthur, Aravind P; Panapakkam, Vivek; Vujicic, Vidak; Merghem, Kamel; Lelarge, Francois; Ramdane, Abderrahim; Barry, Liam P

    2016-06-01

    We use four-wave mixing to measure the correlation coefficient of comb tones in a quantum-dash mode-locked laser under passive and active locked regimes. We study the uncertainty in the measurement of the correlation coefficient of the proposed method.

  3. Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang

    1991-01-01

    The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

  4. High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

    Science.gov (United States)

    Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

    1991-01-01

    The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

  5. Study of mode locking in a microwave-pumped diode laser close to the generation threshold

    International Nuclear Information System (INIS)

    Bagaev, Sergei N; Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2004-01-01

    Active mode locking is studied in a diode laser with a three-mirror resonator upon the microwave modulation of the pump current. The mode-locking region with the minimal width of the spectrum of intermode beats is found, when the microwave frequency is close to the intermode frequency of an external resonator. This region is shown to be located close to the threshold pump current. (lasers, active media)

  6. Critical Behavior of Light in Mode-Locked Lasers

    Science.gov (United States)

    Weill, Rafi; Rosen, Amir; Gordon, Ariel; Gat, Omri; Fischer, Baruch

    2005-06-01

    Light is shown to exhibit critical and tricritical behavior in passively mode-locked lasers with externally injected pulses. It is a first and unique example of critical phenomena in a one-dimensional many-body light-mode system. The phase diagrams consist of regimes with continuous wave, driven parapulses, spontaneous pulses via mode condensation, and heterogeneous pulses, separated by phase transition lines that terminate with critical or tricritical points. Enhanced non-Gaussian fluctuations and collective dynamics are present at the critical and tricritical points, showing a mode system analog of the critical opalescence phenomenon. The critical exponents are calculated and shown to comply with the mean field theory, which is rigorous in the light system.

  7. 11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

    Science.gov (United States)

    Okhrimchuk, Andrey G; Obraztsov, Petr A

    2015-06-08

    We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

  8. All-optical logic gates and wavelength conversion via the injection locking of a Fabry-Perot semiconductor laser

    Science.gov (United States)

    Harvey, E.; Pochet, M.; Schmidt, J.; Locke, T.; Naderi, N.; Usechak, N. G.

    2013-03-01

    This work investigates the implementation of all-optical logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode, and an optical band-pass filter. The DFB lasers are externally modulated to represent logic inputs into the cavity of the multi-mode Fabry-Perot slave laser. The input DFB (master) lasers' wavelengths are aligned with the longitudinal modes of the Fabry-Perot slave laser and their optical power is used to modulate the injection conditions in the Fabry-Perot slave laser. The optical band-pass filter is used to select a Fabry- Perot mode that is either suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity-mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter — a key component in advanced wavelength-division multiplexing networks. As a result of this experimental investigation, a more comprehensive understanding of the locking parameters involved in injecting multiple lasers into a multi-mode cavity and the logic transition time is achieved. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

  9. Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots

    Science.gov (United States)

    Beugeling, Wouter; Uhrig, Götz S.; Anders, Frithjof B.

    2017-09-01

    The coherence of the electron spin in a semiconductor quantum dot is strongly enhanced by mode locking through nuclear focusing, where the synchronization of the electron spin to periodic pulsing is slowly transferred to the nuclear spins of the semiconductor material, mediated by the hyperfine interaction between these. The external magnetic field that drives the Larmor oscillations of the electron spin also subjects the nuclear spins to a Zeeman-like coupling, albeit a much weaker one. For typical magnetic fields used in experiments, the energy scale of the nuclear Zeeman effect is comparable to that of the hyperfine interaction, so that it is not negligible. In this work, we analyze the influence of the nuclear Zeeman effect on mode locking quantitatively. Within a perturbative framework, we calculate the Overhauser-field distribution after a prolonged period of pulsing. We find that the nuclear Zeeman effect can exchange resonant and nonresonant frequencies. We distinguish between models with a single type and with multiple types of nuclei. For the latter case, the positions of the resonances depend on the individual g factors, rather than on the average value.

  10. Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm.

    Science.gov (United States)

    Coluccelli, Nicola; Lagatsky, Alexander; Di Lieto, Alberto; Tonelli, Mauro; Galzerano, Gianluca; Sibbett, Wilson; Laporta, Paolo

    2011-08-15

    We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps. © 2011 Optical Society of America

  11. Towards attosecond synchronization of remote mode-locked lasers using stabilized transmission of optical comb frequencies

    Science.gov (United States)

    Wilcox, R. B.; Byrd, J. M.; Doolittle, L. R.; Holzwarth, R.; Huang, G.

    2011-09-01

    We propose a method of synchronizing mode-locked lasers separated by hundreds of meters with the possibility of achieving sub-fs performance by locking the phases of corresponding lines in the optical comb spectrum. The optical phase from one comb line is transmitted to the remote laser over an interferometrically stabilized link by locking a single frequency laser to a comb line with high phase stability. We describe how these elements are integrated into a complete system and estimate the potential performance.

  12. Dynamics of a Dispersion-Managed Passively Mode-Locked Er-Doped Fiber Laser Using Single Wall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Norihiko Nishizawa

    2015-07-01

    Full Text Available We investigated the dynamics of a dispersion-managed, passively mode-locked, ultrashort-pulse, Er-doped fiber laser using a single-wall carbon nanotube (SWNT device. A numerical model was constructed for analysis of the SWNT fiber laser. The initial process of passive mode-locking, the characteristics of the output pulse, and the dynamics inside the cavity were investigated numerically for soliton, dissipative-soliton, and stretched-pulse mode-locking conditions. The dependencies on the total dispersion and recovery time of the SWNTs were also examined. Numerical results showed similar behavior to experimental results.

  13. Double pass locking and spatial mode locking for gravitational wave detectors

    CERN Document Server

    Cusack, B J; Slagmolen, B; Vine, G D; Gray, M B; McClelland, D E

    2002-01-01

    We present novel techniques for overcoming problems relating to the use of high-power lasers in mode cleaner cavities for second generation laser interferometric gravitational wave detectors. Rearranging the optical components into a double pass locking regime can help to protect locking detectors from damage. Modulator thermal lensing can be avoided by using a modulation-free technique such as tilt locking, or its recently developed cousin, flip locking.

  14. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  15. 35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

    DEFF Research Database (Denmark)

    Kuntz, M.; Fiol, G.; Laemmlin, M.

    2004-01-01

    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 ìm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses.......We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 ìm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses....

  16. Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

    International Nuclear Information System (INIS)

    Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Wei, Zhiyi; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun

    2015-01-01

    A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF 2 disordered crystal was demonstrated. The Y 3+ -codoping in Nd : CaF 2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF 2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier. (letter)

  17. Compact mode-locked diode laser system for high precision frequency comparisons in microgravity

    Science.gov (United States)

    Christopher, H.; Kovalchuk, E. V.; Wicht, A.; Erbert, G.; Tränkle, G.; Peters, A.

    2017-11-01

    Nowadays cold atom-based quantum sensors such as atom interferometers start leaving optical labs to put e.g. fundamental physics under test in space. One of such intriguing applications is the test of the Weak Equivalence Principle, the Universality of Free Fall (UFF), using different quantum objects such as rubidium (Rb) and potassium (K) ultra-cold quantum gases. The corresponding atom interferometers are implemented with light pulses from narrow linewidth lasers emitting near 767 nm (K) and 780 nm (Rb). To determine any relative acceleration of the K and Rb quantum ensembles during free fall, the frequency difference between the K and Rb lasers has to be measured very accurately by means of an optical frequency comb. Micro-gravity applications not only require good electro-optical characteristics but are also stringent in their demand for compactness, robustness and efficiency. For frequency comparison experiments the rather complex fiber laser-based frequency comb system may be replaced by one semiconductor laser chip and some passive components. Here we present an important step towards this direction, i.e. we report on the development of a compact mode-locked diode laser system designed to generate a highly stable frequency comb in the wavelength range of 780 nm.

  18. Compact 84 GHz passive mode-locked fiber laser using dual-fiber coupled fused-quartz microresonator

    Science.gov (United States)

    Liu, Tze-An; Hsu, Yung; Chow, Chi-Wai; Chuang, Yi-Chen; Ting, Wei-Jo; Wang, Bo-Chun; Peng, Jin-Long; Chen, Guan-Hong; Chang, Yuan-Chia

    2017-10-01

    We propose and demonstrate a compact and portable-size 84-GHz passive mode-locked fiber laser, in which a dual-fiber coupled fused-quartz microresonator is employed as the intracavity optical comb filter as well as the optical nonlinear material for optical frequency comb generation. About eight coherent optical tones can be generated in the proposed fiber laser. The 20-dB bandwidth is larger than 588 GHz. The full-width half-maximum pulse-width of the proposed laser is 2.5 ps. We also demonstrate the feasibility of using the proposed passive mode-locked fiber laser to carry a 5-Gbit/s on-off-keying signal and transmit over 20-km standard single mode fiber. A 7% forward error correction requirement can be achieved, showing the proposed fiber laser can be a potential candidate for fiber-wireless applications.

  19. Dual comb generation from a mode-locked fiber laser with orthogonally polarized interlaced pulses.

    Science.gov (United States)

    Akosman, Ahmet E; Sander, Michelle Y

    2017-08-07

    Ultra-high precision dual-comb spectroscopy traditionally requires two mode-locked, fully stabilized lasers with complex feedback electronics. We present a novel mode-locked operation regime in a thulium-holmium co-doped fiber laser, a frequency-halved state with orthogonally polarized interlaced pulses, for dual comb generation from a single source. In a linear fiber laser cavity, an ultrafast pulse train composed of co-generated, equal intensity and orthogonally polarized consecutive pulses at half of the fundamental repetition rate is demonstrated based on vector solitons. Upon optical interference of the orthogonally polarized pulse trains, two stable microwave RF beat combs are formed, effectively down-converting the optical properties into the microwave regime. These co-generated, dual polarization interlaced pulse trains, from one all-fiber laser configuration with common mode suppression, thus provide an attractive compact source for dual-comb spectroscopy, optical metrology and polarization entanglement measurements.

  20. Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    DEFF Research Database (Denmark)

    Pedersen, Niels V.; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product=0.7) 1.5 μm 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...... results agree well with the simulation results obtained using a transmission line laser model (TLLM) model, Both experiments and numerical simulations show how the RF power and the detuning affect the pulsewidth...

  1. Passive harmonic mode locking by mode selection in Fabry-Perot diode lasers with patterned effective index.

    Science.gov (United States)

    Bitauld, David; Osborne, Simon; O'Brien, Stephen

    2010-07-01

    We demonstrate passive harmonic mode locking of a quantum-well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a nonperiodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform-limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.

  2. L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber

    International Nuclear Information System (INIS)

    Du, J; Zhang, S M; Li, H F; Meng, Y C; Li, X L; Hao, Y P

    2012-01-01

    We have proposed and demonstrated an L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber (SA). By adjusting the pump power and the polarization controller, we have experimentally observed L-band fundamental and harmonic mode-locked optical pulses. The fundamental optical pulse has the duration of 1.3 ps, and the maximum average output power of 13.16 mW at the incident pump power of 98.8 mW. The order of the harmonic mode-locked optical pulses can be changed over the range from the second to the fourth. From the experimental results, we deduced that the likely origin of the harmonic mode-locked self-stabilization was the result of global and local soliton interactions induced by the unstability continuous wave (CW) components

  3. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

    2002-01-01

    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  4. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Science.gov (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  5. Optimizing the active region of interband cascade lasers for passive mode-locking

    Directory of Open Access Journals (Sweden)

    K. Ryczko

    2017-01-01

    Full Text Available The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

  6. Broadband features of passively harmonic mode locking in dispersion-managed erbium-doped all-fiber lasers

    Science.gov (United States)

    Geng, Y.; Li, L.; Shu, C. J.; Wang, Y. F.; Tang, D. Y.; Zhao, L. M.

    2018-06-01

    Broadband features of passively harmonic mode locking (HML) in dispersion-managed erbium-doped all-fiber lasers are explored. The bandwidth of HML state is generally narrower than that of fundamental mode locking before pulse breaking occurs. There exists a broadest bandwidth versus the order of HML. HML state with bandwidth up to 61.5 nm is obtained.

  7. Wavelength-stepped, actively mode-locked fiber laser based on wavelength-division-multiplexed optical delay lines

    Science.gov (United States)

    Lee, Eunjoo; Kim, Byoung Yoon

    2017-12-01

    We propose a new scheme for an actively mode-locked wavelength-swept fiber laser that produces a train of discretely wavelength-stepped pulses from a short fiber cavity. Pulses with different wavelengths are split and combined by standard wavelength division multiplexers with fiber delay lines. As a proof of concept, we demonstrate a laser using an erbium doped fiber amplifier and commercially available wavelength-division multiplexers with wavelength spacing of 0.8 nm. The results show simultaneous mode-locking at three different wavelengths. Laser output parameters in time domain, optical and radio frequency spectral domain, and the noise characteristics are presented. Suggestions for the improved design are discussed.

  8. Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers.

    Science.gov (United States)

    Tahvili, M S; Du, L; Heck, M J R; Nötzel, R; Smit, M K; Bente, E A J M

    2012-03-26

    We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two lobes provide a coherent bandwidth and are verified to lead to two synchronized optical pulses. The generated optical pulses are elongated in time due to a chirp which shows opposite signs over the two spectral lobes. Self-induced mode-locking in the single-section laser shows that the dual-wavelength spectra correspond to emission from ground state. In the hybrid mode-locking regime, a map of locking range is presented by measuring the values of timing jitter for several values of power and frequency of the external electrical modulating signal. An overview of the systematic behavior of InAs/InP(100) quantum dot mode-locked lasers is presented as conclusion.

  9. Passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm

    Science.gov (United States)

    Waritanant, Tanant; Major, Arkady

    2018-02-01

    A passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm was demonstrated with an intracavity birefringent filter as the wavelength selecting element. The average output powers achieved were 2.17 W and 2.18 W with optical-to-optical efficiency of 19.6% and 19.7%, respectively. The slope efficiencies were more than 31% at both output wavelengths. The pulse durations at the highest average output power were 10.3 ps and 8.4 ps, respectively. We believe that this is the first report of mode locking of a Nd:YVO4 laser operating at 1073 nm or 1085 nm lines.

  10. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm.

    Science.gov (United States)

    Heck, Martijn J R; Salumbides, Edcel J; Renault, Amandine; Bente, Erwin A J M; Oei, Yok-Siang; Smit, Meint K; van Veldhoven, René; Nötzel, Richard; Eikema, Kjeld S E; Ubachs, Wim

    2009-09-28

    For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material.

  11. Picosecond trigger system useful in mode-locked laser pulse measurements

    International Nuclear Information System (INIS)

    Cunin, B.; Miehe, J.A.; Sipp, B.; Thebault, J.

    1976-01-01

    A highly sensitive tunnel diode trigger useful in temporal intensity build-up measurements of mode-locked lasers has been developed; the device reduces notably the time walk due to the lack of repeatability in intensity of the laser output. The performance of the trigger have been established by means of a GHz wideband-0.1V/cm sensitive real-time oscilloscope and of an image converter camera having a picosecond resolution: the experimental results show that a variation of the amplitude of the laser pulse train of a factor 5 leads to a time jitter of less than 30 ps (Auth.)

  12. Mid-infrared supercontinuum generation in tapered ZBLAN fiber with a standard Erbium mode-locked fiber laser

    DEFF Research Database (Denmark)

    Kubat, Irnis; Moselund, Peter M.; Bang, Ole

    2013-01-01

    to generate a broadband SC using direct pumping with commercially available Erbium (Er) mode-locked fiber lasers at 1550 nm. Formation of SC is manipulated both in the UV and IR by changing the fiber dispersion and nonlinearity using tapers. This has been much studied in various silica fiber designs...... and is now also becoming used in ZBLAN [2], and other soft glasses such as chalcogenide [3] and tellurite [4]. The aim of this nummerical work is to show how pumping tapered commercially available ZBLAN fibers with an Er mode-locked fiber laser can generate a broadband SC approaching the ZBLAN long....... commercially available), core diameter Dc=7 μm, and ZDW=1.5 μm, is pumped with TFWHM=10 ps and P0=10 kW pulses from an Er mode-locked laser with a 40 MHz repetition rate and 4W average power. The resulting MIR SC seen in Fig. 1(b) is based on Modulation Instability breakup of the pump pulse, which generates...

  13. Harmonic mode-locking and sub-round-trip time nonlinear dynamics of electro-optically controlled solid state laser

    Science.gov (United States)

    Gorbunkov, M. V.; Maslova, Yu Ya; Petukhov, V. A.; Semenov, M. A.; Shabalin, Yu V.; Tunkin, V. G.

    2018-03-01

    Harmonic mode-locking in a solid state laser due to optoelectronic control is studied numerically on the basis of two methods. The first one is detailed numeric simulation taking into account laser radiation fine time structure. It is shown that optimally chosen feedback delay leads to self-started mode-locking with generation of desired number of pulses in the laser cavity. The second method is based on discrete maps for short laser pulse energy. Both methods show that the application of combination of positive and negative feedback loops allows to reduce the period of regular nonlinear dynamics down to a fraction of a laser cavity round trip time.

  14. All-fiber nonlinearity- and dispersion-managed dissipative soliton nanotube mode-locked laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Nanjing University of Posts and Communications, Nanjing 210003 (China); Popa, D., E-mail: dp387@cam.ac.uk; Wittwer, V. J.; Milana, S.; Hasan, T.; Jiang, Z.; Ferrari, A. C. [Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Ilday, F. Ö. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)

    2015-12-14

    We report dissipative soliton generation from an Yb-doped all-fiber nonlinearity- and dispersion-managed nanotube mode-locked laser. A simple all-fiber ring cavity exploits a photonic crystal fiber for both nonlinearity enhancement and dispersion compensation. The laser generates stable dissipative solitons with large linear chirp in the net normal dispersion regime. Pulses that are 8.7 ps long are externally compressed to 118 fs, outperforming current nanotube-based Yb-doped fiber laser designs.

  15. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Donin, V I; Yakovin, D V; Gribanov, A V [Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-12-31

    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses. (control of laser radiation parameters)

  16. Mode-Locked Multichromatic X-Rays in a Seeded Free-Electron Laser for Single-Shot X-Ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Dao; Ding, Yuantao; Raubenheimer, Tor; Wu, Juhao; /SLAC

    2012-05-10

    We present the promise of generating gigawatt mode-locked multichromatic x rays in a seeded free-electron laser (FEL). We show that, by using a laser to imprint periodic modulation in electron beam phase space, a single-frequency coherent seed can be amplified and further translated to a mode-locked multichromatic output in an FEL. With this configuration the FEL output consists of a train of mode-locked ultrashort pulses which span a wide frequency gap with a series of equally spaced sharp lines. These gigawatt multichromatic x rays may potentially allow one to explore the structure and dynamics of a large number of atomic states simultaneously. The feasibility of generating mode-locked x rays ranging from carbon K edge ({approx}284 eV) to copper L{sub 3} edge ({approx}931 eV) is confirmed with numerical simulation using the realistic parameters of the linac coherent light source (LCLS) and LCLS-II. We anticipate that the mode-locked multichromatic x rays in FELs may open up new opportunities in x-ray spectroscopy (i.e. resonant inelastic x-ray scattering, time-resolved scattering and spectroscopy, etc.).

  17. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

    Energy Technology Data Exchange (ETDEWEB)

    Merghem, K.; Aubin, G.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Teissier, R.; Baranov, A. N. [Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France); Monakhov, A. M. [Ioffe Institute, 194021 Saint Petersburg (Russian Federation)

    2015-09-14

    We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

  18. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

    International Nuclear Information System (INIS)

    Merghem, K.; Aubin, G.; Ramdane, A.; Teissier, R.; Baranov, A. N.; Monakhov, A. M.

    2015-01-01

    We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation

  19. Design and evaluation of modelocked semiconductor lasers for low noise and high stability

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2005-01-01

    We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

  20. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    Science.gov (United States)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  1. Harmonic mode-locking using the double interval technique in quantum dot lasers.

    Science.gov (United States)

    Li, Yan; Chiragh, Furqan L; Xin, Yong-Chun; Lin, Chang-Yi; Kim, Junghoon; Christodoulou, Christos G; Lester, Luke F

    2010-07-05

    Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10(th) harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.

  2. Mode-locked fiber laser using SU8 resist incorporating carbon nanotubes

    Science.gov (United States)

    Hernandez-Romano, Ivan; Mandridis, Dimitrios; May-Arrioja, Daniel A.; Sanchez-Mondragon, Jose J.; Delfyett, Peter J.

    2011-06-01

    We report the fabrication of a saturable absorber made of a novel polymer SU8 doped with Single Wall Carbon Nanotubes (SWCNTs). A passive mode-locked ring cavity fiber laser was built with a 100 μm thick SU8/SWCNT film inserted between two FC/APC connectors. Self-starting passively mode-locked lasing operation was observed at 1572.04 nm, with a FWHM of 3.26 nm. The autocorrelation trace was 1.536 ps corresponding to a pulse-width of 871 fs. The time-bandwidth product was 0.344, which is close enough to transform-limited sech squared pulses. The repetition rate was 21.27 MHz, and a maximum average output power of 1 mW was also measured.

  3. Coherent Optical Generation of a 6 GHz Microwave Signal with Directly Phase Locked Semiconductor DFB Lasers

    DEFF Research Database (Denmark)

    Gliese, Ulrik Bo; Nielsen, Torben Nørskov; Bruun, Marlene

    1992-01-01

    Experimental results of a wideband heterodyne second order optical phase locked loop with 1.5 ¿m semiconductor lasers are presented. The loop has a bandwidth of 180 MHz, a gain of 181 dBHz and a propagation delay of only 400 ps. A beat signal of 8 MHz linewidth is phase locked to become a replica...... of a microwave reference source close to carrier with a noise level of ¿125 dBc/Hz. The total phase variance of the locked carrier is 0.04 rad2 and carriers can be generated in a continuous range from 3 to 18 GHz. The loop reliability is excellent with an average time to cycle slip of 1011 seconds...

  4. Effect of the doped fibre length on soliton pulses of a bidirectional mode-locked fibre laser

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, H; Alwi Kutty, N A; Zulkifli, M Z; Harun, S W [Photonics Research Center (Department of Physics), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-08-31

    A passively bidirectional mode-locked fibre laser is demonstrated using a highly concentrated erbium-doped fibre (EDF) as a gain medium. To accomplish mode-locked operation in a short cavity, use is made of carbon nanotubes (CNTs) as a saturable absorber. Soliton pulses are obtained at a wavelength of 1560 nm with a repetition rate ranging from 43.92 MHz to 46.97 MHz and pulse width stretching from 0.56 ps to 0.41 ps as the EDF length is reduced from 60 cm to 30 cm. (lasers)

  5. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

    Science.gov (United States)

    Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

    2017-12-01

    Passive mode locking with a fundamental repetition rate at ˜18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.

  6. Tungsten diselenide for mode-locked erbium-doped fiber lasers with short pulse duration

    Science.gov (United States)

    Liu, Wenjun; Liu, Mengli; OuYang, Yuyi; Hou, Huanran; Ma, Guoli; Lei, Ming; Wei, Zhiyi

    2018-04-01

    In this paper, a WSe2 film prepared by chemical vapor deposition (CVD) is transferred onto a tapered fiber, and a WSe2 saturable absorber (SA) is fabricated. In order to measure the third-order optical nonlinearity of the WSe2, the Z-scan technique is applied. The modulation depth of the WSe2 SA is measured as being 21.89%. Taking advantage of the remarkable nonlinear absorption characteristic of the WSe2 SA, a mode-locked erbium-doped fiber laser is demonstrated at 1557.4 nm with a bandwidth of 25.8 nm and signal to noise ratio of 96 dB. To the best of our knowledge, the pulse duration of 163.5 fs is confirmed to be the shortest compared with previous mode-locked fiber lasers based on transition-metal dichalcogenides SAs. These results indicate that WSe2 is a powerful competitor in the application of ultrashort pulse lasers.

  7. Instant recording of the duration of a single mode-locked Nd:YAG laser pulse

    International Nuclear Information System (INIS)

    Lompre, L.A.; Mainfray, G.; Thebault, J.

    1975-01-01

    An electro-optic streak camera incorporating a storage memory video system has been developed and used to instantly visualize and record the shape of a 1.06-μ-wavelength pulse generated by a mode-locked Nd:YAG laser. The duration of a single laser pulse (approximately 30 psec) has been directly measured with and without laser amplification. (U.S.)

  8. High-power femtosecond pulse generation in a passively mode-locked Nd:SrLaAlO4 laser

    Science.gov (United States)

    Liu, Shan-De; Dong, Lu-Lu; Zheng, Li-He; Berkowski, Marek; Su, Liang-Bi; Ren, Ting-Qi; Peng, Yan-Dong; Hou, Jia; Zhang, Bai-Tao; He, Jing-Liang

    2016-07-01

    A high optical quality Nd:SrLaAlO4 (Nd:SLA) crystal was grown using the Czochralski method and showed broad fluorescence spectrum with a full width at half maximum value of 34 nm, which is beneficial for generating femtosecond laser pulses. A stable diode-pumped passively mode-locked femtosecond Nd:SLA laser with 458 fs pulse duration was achieved for the first time at a central wavelength of 1077.9 nm. The average output power of the continuous-wave mode-locked laser was 520 mW and the repetition rate was 78.5 MHz.

  9. Adaptation to the edge of chaos in a self-starting Kerr-lens mode-locked laser

    Science.gov (United States)

    Hsu, C. C.; Lin, J. H.; Hsieh, W. F.

    2009-08-01

    We experimentally and numerically demonstrated that self-focusing acts as a slow-varying control parameter that suppresses the transient chaos to reach a stable mode-locking (ML) state in a self-starting Kerr-lens mode-locked Ti:sapphire laser without external modulation and feedback control. Based on Fox-Li’s approach, including the self-focusing effect, the theoretical simulation reveals that the self-focusing effect is responsible for the self-adaptation. The self-adaptation occurs at the boundary between the chaotic and continuous output regions in which the laser system begins with a transient chaotic state with fractal correlation dimension, and then evolves with reducing dimension into the stable ML state.

  10. Mode-locked Pr3+-doped silica fiber laser with an external cavity

    DEFF Research Database (Denmark)

    Shi, Yuan; Poulsen, Christian; Sejka, Milan

    1994-01-01

    We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...... power have been investigated. With a short piece of nonlinear fiber included in the external cavity, laser pulses of 45 ps have been measured...

  11. Passive mode locking of a femtosecond Ti:sapphire laser with pulsed synchronous pumping by a finite train of picosecond pulses

    International Nuclear Information System (INIS)

    Borisevich, N A; Buganov, O V; Tikhomirov, S A; Tolstorozhev, G B; Shkred, G L

    1999-01-01

    An analysis is made, with the aid of the self-consistent nonlinear ABCD matrix method, of the specific features of the mechanism of passive mode locking of a femtosecond Ti:sapphire laser under conditions of pulsed synchronous pumping. The conditions of stable laser operation are studied. It is proposed to use an additional aperture as an element of negative feedback for the stabilisation of passive mode locking. Practical recommendations concerning the optimisation of a femtosecond laser are given. (control of laser radiation parameters)

  12. Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

    Science.gov (United States)

    Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

    2016-08-15

    The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

  13. Passive mode-locking dynamics in a 3.1GHz quantum dot laser diode operating around 1.5μm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2010-01-01

    We report on passive mode-locking in a 3.1GHz InAs/InP(100) quantum dot laser diode operating around 1.5µm. The range of stable passive mode-locking, detailed measurements of the linewidth of the optical modes and the phase modulation in output pulses are presented.

  14. Simultaneous Q-switching and mode-locking in an intracavity frequency doubled diode-pumped Nd:YVO4 / KTP green laser with Cr4+:YAG

    International Nuclear Information System (INIS)

    Mukhopadhyay, P. K.; Ranganathan, K.; George, J.; Nathan, T. P. S.; Alsous, M. B.

    2007-01-01

    We report intracavity second harmonic (at 532 nm) generation in passively Q-switched mode-locked Nd: YVO4 laser. The width of a typical Q-switched envelope of the mode locked pulses for the green laser was around 65 ± 5 ns and the repetition rate for the mode locked pulses was 400 MHz. The intracavity frequency doubling significantly improves the depth of modulation of the mode locked pulses. The peak power of a single mode locked green pulse near the center of the Q-switched envelope was estimated to be more than 2kw and the average green power was 6 times higher than the CW green power at an incident diode pump power of 6W. (author)

  15. Increasing the mode-locking efficiency of a cw solid-state laser with an auxiliary cavity

    International Nuclear Information System (INIS)

    Kalashnikov, V.L.; Kalosha, V.P.; Mikhailov, V.P.; Demchuk, M.I.

    1992-01-01

    It is predicted theoretically that the efficiency of self-mode locking can be raised by means of a bleachable shutter in the main cavity or an auxiliary cavity. The laser emits a stable train of ultrashort pulses under these conditions. The theory is based on a fluctuation model of the operation of a cw solid-state laser with a linear auxiliary cavity. The increase in efficiency involves a broadening of the region of parameter values of the system in which self-mode locking occurs, a significant decrease in the threshold pump intensity, and a reduced sensitivity of the operation to the phase mismatch of the lengths of the cavities. It is shown, for the first time, that a stable train of double ultrashort pulses can be generated by a system with a shutter in the auxiliary cavity. It is also shown that a self-mode locking is possible in the case in which there is a phase mismatch of the cavity lengths and there is no phase self-modulation in the main cavity. 15 refs., 8 figs

  16. Harmonic Mode-Locked Fiber Laser based on Photonic Crystal Fiber Filled with Topological Insulator Solution

    Directory of Open Access Journals (Sweden)

    Yu-Shan Chen

    2015-04-01

    Full Text Available We reported that the photonic crystal fiber (PCF filled with TI:Bi2Te3 nanosheets solution could act as an effective saturable absorber (SA. Employing this TI-PCF SA device; we constructed an ytterbium-doped all-fiber laser oscillator and achieved the evanescent wave mode-locking operation. Due to the large cavity dispersion; the fundamental mode-locking pulse had the large full width at half maximum (FWHM of 2.33 ns with the repetition rate of ~1.11 MHz; and the radio frequency (RF spectrum with signal-to-noise ratio (SNR of 61 dB. In addition; the transition dynamics from a bunched state of pulses to harmonic mode-locking (HML was also observed; which was up to 26th order.

  17. Experimental demonstration of an Er-doped fiber ring laser mode-locked with a Tm–Ho co-doped fiber saturable absorber

    International Nuclear Information System (INIS)

    Tao, Mengmeng; Wu, Junjie; Wu, Yong; Yang, Pengling; Ye, Xisheng; Peng, Junsong

    2013-01-01

    Mode-locking operation of an Er-doped fiber laser with a Tm–Ho co-doped fiber saturable absorber is demonstrated for the first time. Q-switching, Q-switched mode-locking and CW mode-locking operation modes are observed sequentially with increase of the pump power. In the mode-locking operation mode, a repetition rate at the fundamental cavity frequency of 9.05 MHz is obtained with a pulse duration of 46.3 ns. By rotating the polarization controller, a repetition rate up to 887 MHz is achieved, and the pulse duration is shortened to 0.548 ns. (paper)

  18. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  19. Soliton rains in a graphene-oxide passively mode-locked ytterbium-doped fiber laser with all-normal dispersion

    International Nuclear Information System (INIS)

    Huang, S S; Yan, P G; Zhang, G L; Zhao, J Q; Li, H Q; Lin, R Y; Wang, Y G

    2014-01-01

    We experimentally investigated soliton rains in an ytterbium-doped fiber (YDF) laser with a net normal dispersion cavity using a graphene-oxide (GO) saturable absorber (SA). The 195 m-long-cavity, the fiber birefringence filter and the inserted 2.5 nm narrow bandwidth filter play important roles in the formation of the soliton rains. The soliton rain states can be changed by the effective gain bandwidth of the laser. The experimental results can be conducive to an understanding of dissipative soliton features and mode-locking dynamics in all-normal dispersion fiber lasers with GOSAs. To the best of our knowledge, this is the first demonstration of soliton rains in a GOSA passively mode-locked YDF laser with a net normal dispersion cavity. (letter)

  20. CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yan; Li, Yue; Xu, Jianqiu; Tang, Yulong, E-mail: yulong@sjtu.edu.cn [Key Laboratory for Laser Plasmas (MOE), Department of Physics and Astronomy, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240 (China); Hu, Zhiping; Tang, Xiaosheng [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044 (China)

    2016-06-27

    Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  1. A novel mode-locking technique

    International Nuclear Information System (INIS)

    Chen Shaoh; Chen Youming; Chen Taolue; Si Xiangdong; Yang Yi; Deng Ximing

    1993-01-01

    A novel mode-locked Nd:YAG oscillator has been developed by using an ultrafast photoconductive feedback controlled loop, and mode-locked pulses with a duration of 100ps have been obtained. The energy instability of the pulse trains is ±5%. In this type of mode-locking technology, a type of deep-level doped GaAs (Cr-doped) photoconductive switch, which has a fast response in time and is free of avalance process, is used to drive a Pockels' cell to realize mode-locking. The dark resistance of this type of photoconductive switch is 6 orders of magnitude higher than that of the intrinsic single-crystal silicon, and it can reach a level as high as 10 9 ohms. Consequently, it is able to withstand longterm operation at several thousand DC volts. By means of the photoconductive ohmic switch characteristics, the authors have designed a positive feedback control network which has a very fast response time, and can couple a voltage of up to a thousand volts. Using this unit in a Nd:YAG laser, they have successfully realized a very stable mode-locked pulse train with pulse width shorter than 100 ps. The operation principle, and the results of the preliminary experiments are presented here. 1 ref., 3 figs

  2. Dispersive-cavity actively mode-locked fiber laser for stable radio frequency delivery

    International Nuclear Information System (INIS)

    Dai, Yitang; Wang, Ruixin; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong

    2013-01-01

    We report a novel technique for highly stable transfer of a radio frequency (RF) comb over long optical fiber link, which is highly dispersive and is a part of an actively mode-locked fiber laser. Phase fluctuation along the fiber link, which is mainly induced by physical vibration and temperature fluctuations, is automatically compensated by the self-adapted wavelength shifting. Without phase-locking loop or any tunable parts, stable radio frequency is transferred over a 2-km fiber link, with a time jitter suppression ratio larger than 110. (letter)

  3. Pulse-forming and line-broadening in AM mode locking of the TEA-CO2laser

    NARCIS (Netherlands)

    Witteman, W.J.; Olbertz, A.H.M.

    1977-01-01

    The present paper describes AM mode locking for homogeneously broadened systems, a procedure for measuring linewidths under laser conditions, and finally, experimental results for a 1-atm CO2laser. Working in the frequency domain, analytic solutions are given for the pulse bandwidth and pulse shape

  4. Stability of the mode-locking regime in tapered quantum-dot lasers

    Science.gov (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

    2018-02-01

    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  5. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

    DEFF Research Database (Denmark)

    Klaime, K.; Piron, R.; Grillot, F.

    2013-01-01

    This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers......) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports...... for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show...

  6. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.

    1996-01-01

    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  7. 1.34 µm picosecond self-mode-locked Nd:GdVO4 watt-level laser

    Science.gov (United States)

    Han, Ming; Peng, Jiying; Li, Zuohan; Cao, Qiuyuan; Yuan, Ruixia

    2017-01-01

    With a simple linear configuration, a diode-pumped, self-mode-locked Nd:GdVO4 laser at 1.34 µm is experimentally demonstrated for the first time. Based on the aberrationless theory of self-focusing and thermal lensing effect, through designing and optimizing the resonator, a pulse width as short as 9.1 ps is generated at a repetition rate of 2.0 GHz and the average output power is 2.51 W. The optical conversion efficiency and the slope efficiency for the stable mode-locked operation are approximately 16.7% and 19.2%, respectively.

  8. A PASSIVELY MODE-LOCKED CR4+:FORSTERITE LASER WITH ELEСTRONICALLY CONTROLLED OUTPUT CHARACTERISTICS

    Directory of Open Access Journals (Sweden)

    S. A. Zolotovskaya

    2011-01-01

    Full Text Available Applicability of electronic control of laser output parameters to bulk solid-state laser sources is demonstrated. A single laser source with variable pulse duration for novel imaging and manipulation systems is presented. Stable passive mode-locking of a Cr4+:forsterite laser using a voltage controlled p-n junction quantum dot saturable absorber was achieved. Output shortening from 17,4 to 6,4 ps near-transform limited pulses was obtained by applying reverse bias.

  9. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  10. Tunable radio-frequency photonic filter based on an actively mode-locked fiber laser.

    Science.gov (United States)

    Ortigosa-Blanch, A; Mora, J; Capmany, J; Ortega, B; Pastor, D

    2006-03-15

    We propose the use of an actively mode-locked fiber laser as a multitap optical source for a microwave photonic filter. The fiber laser provides multiple optical taps with an optical frequency separation equal to the external driving radio-frequency signal of the laser that governs its repetition rate. All the optical taps show equal polarization and an overall Gaussian apodization, which reduces the sidelobes. We demonstrate continuous tunability of the filter by changing the external driving radio-frequency signal of the laser, which shows good fine tunability in the operating range of the laser from 5 to 10 GHz.

  11. Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers

    NARCIS (Netherlands)

    Tahvili, M.S.; Du, L.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2012-01-01

    We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two

  12. Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers

    Science.gov (United States)

    Feng, Tao; Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; Wang, Meng; Belenky, Gregory

    2018-02-01

    Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched 5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section ( 300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.

  13. Broadband Fourier domain mode-locked laser for optical coherence tomography at 1060 nm

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2012-01-01

    Optical coherence tomography (OCT) in the 1060nm range is interesting for in vivo imaging of the human posterior eye segment (retina, choroid, sclera) due to low absorption in water and deep penetration into the tissue. Rapidly tunable light sources, such as Fourier domain mode-locked (FDML) lasers...

  14. Characterisation of the light pulses of a cavity dumped dye laser pumped by a cw mode-locked and q-switched Nd:YAG laser

    International Nuclear Information System (INIS)

    Geist, P.; Heisel, F.; Martz, A.; Miehe, J.A.; Miller, R.J.D.

    1984-01-01

    The frequency doubled pulses (of 532 nm) obtained, with the help of a KTP crystal, from those delivered by either a continuous wave mode-locked (100 MHz) or mode-locked Q-switched (0-1 KHz) Nd: YAG laser, are analyzed by means of a streak camera, operating in synchroscan or triggered mode. In the step-by-step measurements the pulse stability, concerning form and amplitude, is shown. In addition, measurements effectuated with synchronously pumped and cavity dumped dye laser (Rhodamine 6G), controlled by a Pockels cell, allows the obtention of stable and reproducible single pulses of 30 ps duration, 10 μJ energy and 500Hz frequency [fr

  15. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  16. 50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror

    Science.gov (United States)

    Naganuma, Kazunori; Mogi, Kazuo

    1991-05-01

    50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

  17. Spectral dynamics of square pulses in passively mode-locked fiber lasers

    Science.gov (United States)

    Semaan, Georges; Komarov, Andrey; Niang, Alioune; Salhi, Mohamed; Sanchez, François

    2018-02-01

    We investigate experimentally and numerically the spectral dynamics of square pulses generated in passively mode-locked fiber lasers under the dissipative soliton resonance. The features of the transition from the single-peak spectral profile to the doublet spectrum with increasing pump power are studied. The used master equation takes into account the gain saturation, the quadratic frequency dispersion of the gain and the refractive index, and the cubic-quintic nonlinearity of the losses and refractive index. Experimental data are obtained for an Er:Yb-doped fiber ring laser. The theoretical and experimental results are in good agreement with each other.

  18. Integrated semiconductor twin-microdisk laser under mutually optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  19. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    Science.gov (United States)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  20. Multiple-Pulse Operation and Bound States of Solitons in Passive Mode-Locked Fiber Lasers

    Directory of Open Access Journals (Sweden)

    A. Komarov

    2012-01-01

    Full Text Available We present results of our research on a multiple-pulse operation of passive mode-locked fiber lasers. The research has been performed on basis of numerical simulation. Multihysteresis dependence of both an intracavity energy and peak intensities of intracavity ultrashort pulses on pump power is found. It is shown that the change of a number of ultrashort pulses in a laser cavity can be realized by hard as well as soft regimes of an excitation and an annihilation of new solitons. Bound steady states of interacting solitons are studied for various mechanisms of nonlinear losses shaping ultrashort pulses. Possibility of coding of information on basis of soliton trains with various bonds between neighboring pulses is discussed. The role of dispersive wave emitted by solitons because of lumped intracavity elements in a formation of powerful soliton wings is analyzed. It is found that such powerful wings result in large bounding energies of interacting solitons in steady states. Various problems of a soliton interaction in passive mode-locked fiber lasers are discussed.

  1. 408-fs SESAM mode locked Cr:ZnSe laser

    Science.gov (United States)

    Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

    2018-01-01

    We report self-starting femtosecond operation of a 127-MHz SESAM mode locked Cr:ZnSe laser around 2420 nm. A thulium doped double clad fiber laser at 1908 nm was used as the pumping source. In the normal dispersion regime, stable pulse pairs with constant phase differences in the multipulse regime were observed. The maximum output power was 342 mW with respect to incident pump power of 4.8 W and the corresponding slope efficiency was 10.4%. By inserting a piece of sapphire plate, dispersion compensation was achieved and the intra-cavity dispersion was moved to the anomalous regime. A maximum output power of 403 mW was obtained and the corresponding slope efficiency was 12.2%. Pulse width was measured to be 408 fs by a collinear autocorrelator using two-photon absorption in an InGaAs photodiode. The laser spectrum in multipulse operation showed a clear periodic modulation.

  2. Mode-locked ytterbium fiber lasers using a large modulation depth carbon nanotube saturable absorber without an additional spectral filter

    International Nuclear Information System (INIS)

    Pan, Y Z; Miao, J G; Liu, W J; Huang, X J; Wang, Y B

    2014-01-01

    We demonstrate an all-normal-dispersion ytterbium (Yb)-doped fiber laser mode-locked by a higher modulation depth carbon nanotube saturable absorber (CNT-SA) based on an evanescent field interaction scheme. The laser cavity consists of pure normal dispersion fibers without dispersion compensation and an additional spectral filter. It is exhibited that the higher modulation depth CNT-SA could contribute to stabilize the mode-locking operation within a limited range of pump power and generate the highly chirped pulses with a high-energy level in the cavity with large normal dispersion and strong nonlinearity. Stable mode-locked pulses with a maximal energy of 29 nJ with a 5.59 MHz repetition rate at the operating wavelength around 1085 nm have been obtained. The maximal time-bandwidth product is 262.4. The temporal and spectral characteristics of pulses versus pump power are demonstrated. The experimental results suggest that the CNT-SA provides a sufficient nonlinear loss to compensate high nonlinearity and catch up the gain at a different pump power and thus leads to the stable mode locking. (letter)

  3. Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode

    Directory of Open Access Journals (Sweden)

    Shunsuke Kono

    2015-09-01

    Full Text Available We investigated the spectral and temporal characteristics of blue-violetfemtosecond optical pulses generated by a passively mode-locked GaInN laser diode ina dispersion-compensated external cavity. The output optical pulses at 400 nm wereanalyzed in detail by intensity auto- and cross-correlation measurements using secondharmonic generation on the surface of a β-BaB2O4 crystal. The obtained results clarifiedwavelength-dependent chirp characteristics of the optical pulses. The analysis suggestedthat a large frequency shift due to saturation in the saturable absorber and gain sectionsplayed an important role in the generation of femtosecond optical pulses.

  4. Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber

    International Nuclear Information System (INIS)

    Li, M; Zhao, S; Li, Y; Yang, K; Li, G; Li, D; An, J; Li, T; Yu, Z

    2009-01-01

    By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the passively Q-switched pulse envelops ranges from 37.5 to 139 kHz as the pump power increased from 1.7 to 8.2 W. The mode-locked pulse inside the Q-switched envelop has an estimated pulse width of about 220 ps and a repetition rate of 111 MHz. Under an incident pump power of 8.2 W, the highest pulse energy of 6 μJ of each Q-switched envelope, and the highest peak power about 2.73 kW of Q-switched mode-locked pulses can be obtained

  5. Passive mode locking in a multisegment laser diode with an external cavity

    International Nuclear Information System (INIS)

    Andreeva, E V; Magnitskiy, Sergey A; Koroteev, Nikolai I; Salik, E; Feinberg, J; Starodubov, D S; Shramenko, M V; Yakubovich, S D

    1999-01-01

    The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 - 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics. (lasers)

  6. Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes

    International Nuclear Information System (INIS)

    Yanson, D. A.; Street, M. W.; McDougall, S. D.; Thayne, I. G.; Marsh, J. H.; Avrutin, E. A.

    2001-01-01

    Compound-cavity laser diodes are mode locked at a harmonic of the fundamental round-trip frequency to achieve repetition rates of up to 2.1 THz. The devices are fabricated from GaAs/AlGaAs material at a wavelength of 860 nm and incorporate two gain sections with an etched slot reflector between them, and a saturable absorber section. Autocorrelation studies are used to investigate device behavior for different reflector types and reflectivity. These lasers may find applications in terahertz imaging, medicine, ultrafast optical links, and atmospheric sensing. [copyright] 2001 American Institute of Physics

  7. Mode-locking operation of a flash-lamp-pumped Nd:YAG laser at 1.064 μm with Zakharov-Manakov solitons

    International Nuclear Information System (INIS)

    Andreana, M; Tonello, A; Couderc, V; Baronio, F; Conforti, M; De Angelis, C

    2011-01-01

    We report experimental results on the mode-locked operation of a flash-lamp-pumped Nd:YAG laser at 1.064 μm. The KTP crystal, which induces passive mode-locking, exploits the existence and properties of spatial Zakharov-Manakov soliton dynamics. A train of pulses with duration close to 100 ps, repetition rate of 136 MHz and modulation depth almost 100% has been produced. The mode-locked pulses are modulated with a longer 180 ns pulse envelope with repetition rate of 10 Hz

  8. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  9. Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

    International Nuclear Information System (INIS)

    Lin, Y-H; Lin, G-R

    2012-01-01

    The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

  10. The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

    Science.gov (United States)

    Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

    2011-01-01

    Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

  11. Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2009-01-01

    Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 µm is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values of

  12. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

    International Nuclear Information System (INIS)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Lai, Yin-Chieh; Yeh, Chien-Hung; Tsang, Hon-Ki

    2016-01-01

    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism. (letter)

  13. Injection-locked single-mode VCSEL for orthogonal multiplexing and amplitude noise suppression

    DEFF Research Database (Denmark)

    Chipouline, Arkadi; Lyubopytov, Vladimir S.; Malekizandi, Mohammadreza

    2017-01-01

    It has been shown earlier, that the injection locked semiconductor lasers enable effective amplitude noise suppression [1] and makes possible an extra level of signal multiplexing-orthogonal modulation [2], where DPSK and ASK NRZ channels propagate at the same wavelength [3]. In our work we use...... an injection-locked 1550 nm VCSEL as a slave laser providing separation of amplitude and phase modulations, carrying independent information flows. To validate the possibility of phase modulation extraction by an injection-locked VCSEL, an experimental setup shown in Fig. 1 has been built....

  14. Dynamical modeling and experiment for an intra-cavity optical parametric oscillator pumped by a Q-switched self-mode-locking laser

    Science.gov (United States)

    Wang, Jing; Liu, Nianqiao; Song, Peng; Zhang, Haikun

    2016-11-01

    The rate-equation-based model for the Q-switched mode-locking (QML) intra-cavity OPO (IOPO) is developed, which includes the behavior of the fundamental laser. The intensity fluctuation mechanism of the fundamental laser is first introduced into the dynamics of a mode-locking OPO. In the derived model, the OPO nonlinear conversion is considered as a loss for the fundamental laser and thus the QML signal profile originates from the QML fundamental laser. The rate equations are solved by a digital computer for the case of an IOPO pumped by an electro-optic (EO) Q-switched self-mode-locking fundamental laser. The simulated results for the temporal shape with 20 kHz EO repetition and 11.25 W pump power, the signal average power, the Q-switched pulsewidth and the Q-switched pulse energy are obtained from the rate equations. The signal trace and output power from an EO QML Nd3+: GdVO4/KTA IOPO are experimentally measured. The theoretical values from the rate equations agree with the experimental results well. The developed model explains the behavior, which is helpful to system optimization.

  15. Injection Locking of a Semiconductor Double Quantum Dot Micromaser.

    Science.gov (United States)

    Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R

    2015-11-01

    Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

  16. Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

    International Nuclear Information System (INIS)

    Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

    2012-01-01

    We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

  17. Wavelength and pulse duration tunable ultrafast fiber laser mode-locked with carbon nanotubes

    OpenAIRE

    Li, Diao; Jussila, Henri; Wang, Yadong; Hu, Guohua; Albrow-Owen, Tom; C. T. Howe, Richard; Ren, Zhaoyu; Bai, Jintao; Hasan, Tawfique; Sun, Zhipei

    2018-01-01

    Ultrafast lasers with tunable parameters in wavelength and time domains are the choice of light source for various applications such as spectroscopy and communication. Here, we report a wavelength and pulse-duration tunable mode-locked Erbium doped fiber laser with single wall carbon nanotube-based saturable absorber. An intra-cavity tunable filter is employed to continuously tune the output wavelength for 34 nm (from 1525 nm to 1559 nm) and pulse duration from 545 fs to 6.1 ps, respectively....

  18. Generation of bound states of pulses in a SESAM mode-locked Cr:ZnSe laser

    Science.gov (United States)

    Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

    2018-06-01

    We report on the generation of bound states of pulses in a SESAM mode-locked Cr:ZnSe laser around 2415 nm. A thulium-doped double-clad fiber laser at 1908 nm was used as the pump source. Bound states with various pulse separations at different dispersion regimes were obtained. Especially, in the anomalous dispersion regime, vibrating bound state of solitons exhibiting an evolving phase was obtained.

  19. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

    Science.gov (United States)

    Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

    2017-07-01

    We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

  20. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  1. Polariton condensation, superradiance and difference combination parametric resonance in mode-locked laser

    Science.gov (United States)

    Bagayev, S. N.; Arkhipov, R. M.; Arkhipov, M. V.; Egorov, V. S.; Chekhonin, I. A.; Chekhonin, M. A.

    2017-11-01

    The generation of the ring mode-locked laser containing resonant absorption medium in the cavity was investigated. It is shown that near the strong resonant absorption lines a condensation of polaritons arises. Intensive radiation looks like as superradiance in a medium without population inversion. We studied theoretically the microscopic mechanism of these phenomena. It was shown that in this system in absorbing medium a strong self-induced difference combination parametric resonance exists. Superradiance on polaritonic modes in the absorbing medium are due to the emergence of light-induced resonant polarization as a result of fast periodic nonadiabatic quantum jumps in the absorber.

  2. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  3. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  4. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Energy Technology Data Exchange (ETDEWEB)

    Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  5. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    International Nuclear Information System (INIS)

    Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

    2016-01-01

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  6. Repetition frequency scaling of an all-polarization maintaining erbium-doped mode-locked fiber laser based on carbon nanotubes saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Jagiello, J.; Lipinska, L. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

    2015-04-07

    We demonstrate an all-polarization maintaining (PM), mode-locked erbium (Er)-doped fiber laser based on a carbon nanotubes (CNT) saturable absorber (SA). The laser resonator was maximally simplified by using only one passive hybrid component and a pair of fiber connectors with deposited CNTs. The repetition frequency (F{sub rep}) of such a cost-effective and self-starting mode-locked laser was scaled from 54.3 MHz to 358.6 MHz. The highest F{sub rep} was obtained when the total cavity length was shortened to 57 cm. The laser allows ultrashort pulse generation with the duration ranging from 240 fs to 550 fs. Because the laser components were based on PM fibers the laser was immune to the external perturbations and generated laniary polarized light with the degree of polarization (DOP) of 98.7%.

  7. Asynchronous and synchronous dual-wavelength pulse generation in a passively mode-locked fiber laser with a mode-locker.

    Science.gov (United States)

    Hu, Guoqing; Pan, Yingling; Zhao, Xin; Yin, Siyao; Zhang, Meng; Zheng, Zheng

    2017-12-01

    The evolution from asynchronous to synchronous dual-wavelength pulse generation in a passively mode-locked fiber laser is experimentally investigated by tailoring the intracavity dispersion. Through tuning the intracavity-loss-dependent gain profile and the birefringence-induced filter effect, asynchronous dual-wavelength soliton pulses can be generated until the intracavity anomalous dispersion is reduced to ∼8  fs/nm. The transition from asynchronous to synchronous pulse generation is then observed at an elevated pump power in the presence of residual anomalous dispersion, and it is shown that pulses are temporally synchronized at the mode-locker in the cavity. Spectral sidelobes are observed and could be attributed to the four-wave-mixing effect between dual-wavelength pulses at the carbon nanotube mode-locker. These results could provide further insight into the design and realization of such dual-wavelength ultrafast lasers for different applications such as dual-comb metrology as well as better understanding of the inter-pulse interactions in such dual-comb lasers.

  8. Passive mode locking at harmonics of the free spectral range of the intracavity filter in a fiber ring laser.

    Science.gov (United States)

    Zhang, Shumin; Lu, Fuyun; Dong, Xinyong; Shum, Ping; Yang, Xiufeng; Zhou, Xiaoqun; Gong, Yandong; Lu, Chao

    2005-11-01

    We report the passive mode-locking at harmonics of the free spectral range (FSR) of the intracavity multi-channel filter in a fiber ring laser. The laser uses a sampled fiber Bragg grating (SFBG) with a free spectral range (FSR) of 0.8 nm, or 99 GHz at 1555 nm, and a length of highly nonlinear photonic crystal fiber with low and flat dispersion. Stable picosecond soliton pulse trains with twofold to sevenfold enhancement in the repetition rate, relative to the FSR of the SFBG, have been achieved. The passive mode-locking mechanism that is at play in this laser relies on a dissipative four-wave mixing process and switching of repetition rate is realized simply by adjustment of the intracavity polarization controllers.

  9. Femtosecond mode-locked erbium-doped fiber laser based on MoS2-PVA saturable absorber

    Science.gov (United States)

    Ahmed, M. H. M.; Latiff, A. A.; Arof, H.; Ahmad, H.; Harun, S. W.

    2016-08-01

    We fabricate a free-standing few-layer molybdenum disulfide (MoS2)-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a soliton mode-locked Erbium-doped fiber laser (EDFL). A stable self-started mode-locked soliton pulse is generated by fine-tuning the rotation of the polarization controller at a low threshold pump power of 25 mW. Its solitonic behavior is verified by the presence of Kelly sidebands in the output spectrum. The central wavelength, pulse width, and repetition rate of the laser are 1573.7 nm, 630 fs, and 27.1 MHz, respectively. The maximum pulse energy is 0.141 nJ with peak power of 210 W at pump power of 170 mW. This result contributes to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.

  10. Q-switching and mode-locking in a diode-pumped frequency-doubled Nd : YAG laser

    International Nuclear Information System (INIS)

    Donin, Valerii I; Yakovin, Dmitrii V; Gribanov, A V

    2012-01-01

    A new method for obtaining Q-switching simultaneously with mode-locking using one travelling-wave acousto-optic modulator in a frequency-doubled Nd : YAG laser cavity is described. Further shortening of output laser pulses (from 40 to 3.25 ps) is achieved by forming a Kerr lens in the frequency-doubling crystal. At an average power of ∼ 2 W and a Q-switching rate of 2 kHz, the peak power of the stably operating reached ∼ 50 MW.

  11. Real-time dual-comb spectroscopy with a free-running bidirectionally mode-locked fiber laser

    Science.gov (United States)

    Mehravar, S.; Norwood, R. A.; Peyghambarian, N.; Kieu, K.

    2016-06-01

    Dual-comb technique has enabled exciting applications in high resolution spectroscopy, precision distance measurements, and 3D imaging. Major advantages over traditional methods can be achieved with dual-comb technique. For example, dual-comb spectroscopy provides orders of magnitude improvement in acquisition speed over standard Fourier-transform spectroscopy while still preserving the high resolution capability. Wider adoption of the technique has, however, been hindered by the need for complex and expensive ultrafast laser systems. Here, we present a simple and robust dual-comb system that employs a free-running bidirectionally mode-locked fiber laser operating at telecommunication wavelength. Two femtosecond frequency combs (with a small difference in repetition rates) are generated from a single laser cavity to ensure mutual coherent properties and common noise cancellation. As the result, we have achieved real-time absorption spectroscopy measurements without the need for complex servo locking with accurate frequency referencing, and relatively high signal-to-noise ratio.

  12. Mode-locking via dissipative Faraday instability.

    Science.gov (United States)

    Tarasov, Nikita; Perego, Auro M; Churkin, Dmitry V; Staliunas, Kestutis; Turitsyn, Sergei K

    2016-08-09

    Emergence of coherent structures and patterns at the nonlinear stage of modulation instability of a uniform state is an inherent feature of many biological, physical and engineering systems. There are several well-studied classical modulation instabilities, such as Benjamin-Feir, Turing and Faraday instability, which play a critical role in the self-organization of energy and matter in non-equilibrium physical, chemical and biological systems. Here we experimentally demonstrate the dissipative Faraday instability induced by spatially periodic zig-zag modulation of a dissipative parameter of the system-spectrally dependent losses-achieving generation of temporal patterns and high-harmonic mode-locking in a fibre laser. We demonstrate features of this instability that distinguish it from both the Benjamin-Feir and the purely dispersive Faraday instability. Our results open the possibilities for new designs of mode-locked lasers and can be extended to other fields of physics and engineering.

  13. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. 5-GHz passively mode-locked quantum dot ring laser diode at 1.5 μm

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2008-01-01

    In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 µm. The device consists of an 18-mm long (electrically pumped) ring cavity, corresponding to a 5-GHz roundtrip frequency. The waveguide width is 2 µm. A

  15. Mode-Locked 1.5 um Semiconductor Optical Fiber Ring

    DEFF Research Database (Denmark)

    Pedersen, Niels Vagn; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product = 0.7) 1.5 um 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental r...

  16. Electronic control of different generation regimes in mode-locked all-fibre F8 laser

    Science.gov (United States)

    Kobtsev, Sergey; Ivanenko, Aleksey; Kokhanovskiy, Alexey; Smirnov, Sergey

    2018-04-01

    We demonstrate for the first time an electronically controlled realisation of markedly different generation regimes in a mode-locked all-fibre figure-eight (F8) Yb-doped laser. Electronic adjustment of the ratio of pumping powers of two amplification stages in a nonlinear amplifying loop mirror enables the establishment of stable pulse generation regimes with different degrees of coherence and control over their parameters within relatively broad limits, with the pulse duration range exceeding a factor of two in the picosecond domain for coherent and incoherent pulses, the energy range exceeding an order of magnitude for incoherent pulses (2.2-24.8 nJ) and over a factor of 8 for coherent pulses (1.9-16.2 nJ). Adjustment of the pumping powers allows one to maintain the duration of the coherent pulses and to set their peak power in the range of 32.5-292.5 W. The proposed configuration of electronic control over the radiation parameters of a mode-locked all-fibre F8 laser enables reproducible generation of pulses of different types with specified parameters within a broad range of values.

  17. 256 fs, 2 nJ soliton pulse generation from MoS2 mode-locked fiber laser

    Science.gov (United States)

    Jiang, Zike; Chen, Hao; Li, Jiarong; Yin, Jinde; Wang, Jinzhang; Yan, Peiguang

    2017-12-01

    We demonstrate an Er-doped fiber laser (EDFL) mode-locked by a MoS2 saturable absorber (SA), delivering a 256 fs, 2 nJ soliton pulse at 1563.4 nm. The nonlinear property of the SA prepared by magnetron sputtering deposition (MSD) is measured with a modulation depth (MD) of ∼19.48% and a saturable intensity of 4.14 MW/cm2. To the best of our knowledge, the generated soliton pulse has the highest pulse energy of 2 nJ among the reported mode-locked EDFLs based on transition metal dichalcogenides (TMDs). Our results indicate that MSD-grown SAs could offer an exciting platform for high pulse energy and ultrashort pulse generation.

  18. Mechanism of multisoliton formation and soliton energy quantization in passively mode-locked fiber lasers

    International Nuclear Information System (INIS)

    Tang, D.Y.; Zhao, L.M.; Zhao, B.; Liu, A.Q.

    2005-01-01

    We report results of numerical simulations on multiple-soliton generation and soliton energy quantization in a soliton fiber ring laser passively mode locked by using the nonlinear polarization rotation technique. We found numerically that the formation of multiple solitons in the laser is caused by a peak-power-limiting effect of the laser cavity. It is also the same effect that suppresses the soliton pulse collapse, an intrinsic feature of solitons propagating in gain media, and makes the solitons stable in the laser. Furthermore, we show that the soliton energy quantization observed in the lasers is a natural consequence of the gain competition between the multiple solitons. Enlightened by the numerical result we speculate that multisoliton formation and soliton energy quantization observed in other types of soliton fiber lasers could have a similar mechanism

  19. Tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation

    International Nuclear Information System (INIS)

    Luo, A-P; Luo, Z-C; Xu, W-C; Dvoyrin, V V; Mashinsky, V M; Dianov, E M

    2011-01-01

    We demonstrate a tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser by using nonlinear polarization rotation (NPR) technique. Exploiting the spectral filtering effect caused by the combination of the polarizer and intracavity birefringence, the wavelength separation of dual-wavelength mode-locked pulses can be flexibly tuned between 2.38 and 20.45 nm. Taking the advantage of NPR-induced intensity-dependent loss to suppress the mode competition, the stable dual-wavelength pulses output is obtained at room temperature. Moreover, the dual-wavelength switchable operation is achieved by simply rotating the polarization controllers (PCs)

  20. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru

    2014-01-01

    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  1. High-power actively Q-switched single-mode 1342 nm Nd:YVO4 ring laser, injection-locked by a cw single-frequency microchip laser.

    Science.gov (United States)

    Koch, Peter; Bartschke, Juergen; L'huillier, Johannes A

    2015-11-30

    In this paper we report on the realization of a single-mode Q-switched Nd:YVO4 ring laser at 1342 nm. Unidirectional and single-mode operation of the ring laser is achieved by injection-locking with a continuous wave Nd:YVO4 microchip laser, emitting a single-frequency power of up to 40 mW. The ring laser provides a single-mode power of 13.9 W at 10 kHz pulse repetition frequency with a pulse duration of 18.2 ns and an excellent beam quality (M2 laser, a power of 8.7 W at 671 nm with a pulse duration of 14.8 ns and a beam propagation factor of M2 < 1.1 is obtained. The 671 nm radiation features a long-term spectral width of 75 MHz.

  2. Gold nanorod saturable absorber for passive mode-locking at 1 μm wavelength

    International Nuclear Information System (INIS)

    Kang, Z; Li, Q; Gao, X J; Jia, Z X; Qin, G S; Qin, W P; Zhang, L; Feng, Y

    2014-01-01

    Gold nanorods (GNRs) were used as a saturable absorber (SA) for passive mode-locking at 1 μm wavelength. The GNR-SA film was fabricated by mixing GNRs with sodium carboxymethylcellulose. The longitudinal surface plasmon resonance absorption of GNRs was used to induce mode-locking. By using the GNR-SA film, stable passive mode-locking at 1039 nm was experimentally demonstrated in an ytterbium-doped fiber laser cavity pumped by a 980 nm laser diode. The laser produced ∼440 ps pulses with a repetition rate of 36.6 MHz and an average output power of ∼1.25 mW for a pump power of ∼82 mW. (letter)

  3. Numerical investigation into the injection-locking phenomena of gain switched lasers for optical frequency comb generation

    International Nuclear Information System (INIS)

    Ó Dúill, Sean P.; Anandarajah, Prince M.; Zhou, Rui; Barry, Liam P.

    2015-01-01

    We present detailed numerical simulations of the laser dynamics that describe optical frequency comb formation by injection-locking a gain-switched laser. The typical rate equations for semiconductor lasers including stochastic carrier recombination and spontaneous emission suffice to show the injection-locking behavior of gain switched lasers, and we show how the optical frequency comb evolves starting from the free-running state, right through the final injection-locked state. Unlike the locking of continuous wave lasers, we show that the locking range for gain switched lasers is considerably greater because injection locking can be achieved by injecting at frequencies close to one of the comb lines. The quality of the comb lines is formally assessed by calculating the frequency modulation (FM)-noise spectral density and we show that under injection-locking conditions the FM-noise spectral density of the comb lines tend to that of the maser laser

  4. Numerical investigation into the injection-locking phenomena of gain switched lasers for optical frequency comb generation

    Energy Technology Data Exchange (ETDEWEB)

    Ó Dúill, Sean P., E-mail: sean.oduill@dcu.ie; Anandarajah, Prince M.; Zhou, Rui; Barry, Liam P. [The RINCE Institute, Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2015-05-25

    We present detailed numerical simulations of the laser dynamics that describe optical frequency comb formation by injection-locking a gain-switched laser. The typical rate equations for semiconductor lasers including stochastic carrier recombination and spontaneous emission suffice to show the injection-locking behavior of gain switched lasers, and we show how the optical frequency comb evolves starting from the free-running state, right through the final injection-locked state. Unlike the locking of continuous wave lasers, we show that the locking range for gain switched lasers is considerably greater because injection locking can be achieved by injecting at frequencies close to one of the comb lines. The quality of the comb lines is formally assessed by calculating the frequency modulation (FM)-noise spectral density and we show that under injection-locking conditions the FM-noise spectral density of the comb lines tend to that of the maser laser.

  5. Tunable negative-tap photonic microwave filter based on a cladding-mode coupler and an optically injected laser of large detuning.

    Science.gov (United States)

    Chan, Sze-Chun; Liu, Qing; Wang, Zhu; Chiang, Kin Seng

    2011-06-20

    A tunable negative-tap photonic microwave filter using a cladding-mode coupler together with optical injection locking of large wavelength detuning is demonstrated. Continuous and precise tunability of the filter is realized by physically sliding a pair of bare fibers inside the cladding-mode coupler. Signal inversion for the negative tap is achieved by optical injection locking of a single-mode semiconductor laser. To couple light into and out of the cladding-mode coupler, a pair of matching long-period fiber gratings is employed. The large bandwidth of the gratings requires injection locking of an exceptionally large wavelength detuning that has never been demonstrated before. Experimentally, injection locking with wavelength detuning as large as 27 nm was achieved, which corresponded to locking the 36-th side mode. Microwave filtering with a free-spectral range tunable from 88.6 MHz to 1.57 GHz and a notch depth larger than 35 dB was obtained.

  6. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  7. Study of simultaneous q-switching and mode-locking in ND:YVO4 laser with Cr4+:YAG crystal

    International Nuclear Information System (INIS)

    Al-Sous, M. B.

    2009-01-01

    A numerical model of rate equations for a four-level solid-state laser with Cr 4+ :YAG saturable absorber including excited state absorption ESA is presented. The cavity is divided into a large number of disks and the model is solved for each disk and its local corresponding photon flux. The flux array is shifted for each recurrence simulating the movement of photons inside the cavity during the round trip. This simulator can describe the mode locking phenomenon and can be used to simulate the simultaneous mode locking and Q-switching with a saturable absorber. (author)

  8. Study of simulations q-switching and mode-locking in Nd:YVO4 laser with Cr4+:YAG crystal

    International Nuclear Information System (INIS)

    Al-Sous, M. B.

    2007-12-01

    A numerical model of rate equations for a four-level solid-state laser with Cr 4+ :YAG saturable absorber including excited state absorption ESA is presented. The cavity is divided into a large number of disks and the model is solved for each disk and its local corresponding photon flux. The flux array is shifted for each recurrence simulating the movement of photons inside the cavity during the round trip. This simulator can describe the mode locking phenomenon and can be used to simulate the simultaneous mode locking and Q-switching with a saturable absorber.(author)

  9. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  10. Dual wavelength Mode-Locking of InAs/InP quantum dot laser diodes at 1.5µm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2011-01-01

    We report on stable dual-wavelength mode-locking of 3.1GHz and 10GHz two-section InAs/InP(100) quantum dot laser diodes. Evaluation of relative time delay between different spectral components indicates opposite sign of chirp over the two spectral lobes

  11. Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

    Science.gov (United States)

    Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

    2018-05-01

    Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

  12. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Science.gov (United States)

    Kemiche, Malik; Lhuillier, Jérémy; Callard, Ségolène; Monat, Christelle

    2018-01-01

    We exploit slow light (high ng) modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28), this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate) of the pulsed laser signal.

  13. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Directory of Open Access Journals (Sweden)

    Malik Kemiche

    2018-01-01

    Full Text Available We exploit slow light (high ng modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28, this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate of the pulsed laser signal.

  14. Soliton formation and evolution in passively-mode-locked lasers with ultralong anomalous-dispersion fibers

    International Nuclear Information System (INIS)

    Liu Xueming

    2011-01-01

    The soliton formation and evolution are numerically and experimentally investigated in passively-mode-locked lasers where pulses encounter ultralong anomalous-dispersion fibers. The pulse formation and evolution in lasers are determined by two balances, namely, nonlinearity and anomalous-dispersion balance and intracavity filtering and self-amplitude modulation balance. It is numerically found that a higher-energy soliton can be split into identical lower-energy multisolitons with exactly the same physical properties. Simulation results show that the separation of neighboring solitons is variational in the temporal domain. The temporal and spectral characteristics of solitons have large variations throughout the laser cavity, qualitatively distinct from the steady state of conventional solitons. The experimental observations confirm the theoretical predictions.

  15. Mathematical solutions of rate equations of a laser-diode end-pumped passively Q-switched and mode locked Nd-laser with Cr4+:YAG polarized saturable absorber

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2012-01-01

    The intracavity frequency-doubling (IFD) of a simultaneous passively Q-switched mode-locked diode-pumped Nd 3 + - laser is studied with a polarized isotropic Cr 4 +: YAG saturable absorber. A general recurrence formula for the mode-locked pulses under the Q-switched envelope at fundamental wavelength has been reconstructed in order to analyze the temporal shape behavior of a single Q-switched envelope with mode-locking pulse trains. This formula has been derived taking into account the impact of the IFD and polarized Cr 4 +: YAG saturable absorber.The presented mathematical model describes the self-induced anisotropy appeared in the polarized Cr 4 +: YAG in the nonlinear stage of the giant pulse formation. For the anisotropic Nd 3 +: YVO 4 active medium, the generated polarized waves are assumed to be fixed through the lasing cycle. Besides, the maximum absorber initial transmission and the minimum mirror reflectivity values have been determined from the second threshold criterion. The calculated numerical results demonstrate the impact of the variation of the input laser parameters (rotational angle of the polarized crystal, absorber initial transmission and the output mirror reflectivity) on the characteristics of the output laser pulse (SH peak power, pulse width, pulse duration and shift pulse position of central mode). The calculated numerical results in this work is in good qualitative and quantitative agreement with the available experimental data reported in the references. (author)

  16. Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity

    Science.gov (United States)

    Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.

    2017-10-01

    The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

  17. An asymmetric integrated extended cavity 20GHz mode-locked quantum well ring laser fabricated in the JePPIX technology platform

    NARCIS (Netherlands)

    Tahvili, M.S.; Barbarin, Y.; Ambrosius, H.P.M.M.; Smit, M.K.; Bente, E.A.J.M.; Leijtens, X.J.M.; Vries, de T.; Smalbrugge, E.; Bolk, J.

    2011-01-01

    In this paper, we present mode-locked operation of a monolithic 20GHz integrated extended cavity ring laser. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section (SOA), a separate 40µm long saturable absorber (SA) section, passive waveguide sections (shallow and deep

  18. Mode-locking peculiarities in an all-fiber erbium-doped ring ultrashort pulse laser with a highly-nonlinear resonator

    Science.gov (United States)

    Dvoretskiy, Dmitriy A.; Sazonkin, Stanislav G.; Kudelin, Igor S.; Orekhov, Ilya O.; Pnev, Alexey B.; Karasik, Valeriy E.; Denisov, Lev K.

    2017-12-01

    Today ultrashort pulse (USP) fiber lasers are in great demand in a frequency metrology field, THz pulse spectroscopy, optical communication, quantum optics application, etc. Therefore mode-locked (ML) fiber lasers have been extensively investigated over the last decade due the number of scientific, medical and industrial applications. It should be noted, that USP fiber lasers can be treated as an ideal platform to expand future applications due to the complex ML nonlinear dynamics in a laser resonator. Up to now a series of novel ML regimes have been investigated e.g. self-similar pulses, noise-like pulses, multi-bound solitons and soliton rain generation. Recently, we have used a highly nonlinear germanosilicate fiber (with germanium oxides concentration in the core 50 mol. %) inside the resonator for more reliable and robust launching of passive mode-locking based on the nonlinear polarization evolution effect in fibers. In this work we have measured promising and stable ML regimes such as stretched pulses, soliton rain and multi-bound solitons formed in a highly-nonlinear ring laser and obtained by intracavity group velocity dispersion (GVD) variation in slightly negative region. As a result, we have obtained the low noise ultrashort pulse generation with duration 59 dB) and relative intensity noise <-101 dBc / Hz.

  19. D2O laser pumped by an injection-locked CO2 laser for ion-temperature measurements

    International Nuclear Information System (INIS)

    Okada, Tatsuo; Ohga, Tetsuaki; Yokoo, Masakazu; Muraoka, Katsunori; Akazaki, Masanori.

    1986-01-01

    The cooperative Thomson scattering method is one of the various new techniques proposed for measuring the temperature of ions in nuclear fusion critical plasma, for which a high-performance FIR laser pumped by an injection-locked CO 2 laser is required. This report deals with D 2 O laser with a wavelength of 385 μm which is pumped by injection-locked single-mole TEA CO 2 laser composed of a driver laser and an output-stage laser. A small-sized automatic pre-ionization type laser is employed for the driver. The resonator of the driver laser consists of a plane grating of littrow arrangement and ZnSe plane output mirrors with reflection factor of 50 %. An aperture and ZnSe etalon are inserted in the resonator to produce single transverse- and longitudinal-mode oscillation, respectively. The output-stage laser is also of the automatic pre-ionization type. Theoretically, an injection power of 0.1 pW/mm 3 is required for a CO 2 laser. Single-mode oscillation of several hundred nW/mm 3 can be produced by the CO 2 laser used in this study. Tuning of the output-stage laser is easily controlled by the driver laser. High stability of the injection-locked operation is demonstrated. CO 2 laser beam is introduced into the D 2 O laser through a KCl window to excite D 2 O laser beam in the axial direction. Input and output characteristics of the D 2 O laser are shown. Also presented are typical pulse shapes from the D 2 O laser pumped by a free-running CO 2 laser pulse or by an injection-locked single-mode CO 2 laser pulse. (Nogami, K.)

  20. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

    Science.gov (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

    2010-01-01

    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  1. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  2. Self-oscillations in cw solid-state ultrashort-pulse-generating lasers with mode locking by self-focusing

    International Nuclear Information System (INIS)

    Kalashnikov, V L; Krimer, D O; Mejid, F; Poloiko, I G; Mikhailov, V P

    1999-01-01

    Steady-state and transient regimes of ultrashort pulse generation are studied for cw solid-state lasers with mode locking by self-focusing. It is shown that the control parameter, which governs the nature of lasing, is the relationship between self-phase-modulation and the saturation intensity of an efficient shutter, induced by the Kerr self-focusing. Numerical modelling based on mapping the parameters of a quasi-soliton ultrashort pulse, considered in the aberration-free approximation, yields results in good agreement with experiments. (control of laser radiation parameters)

  3. Repetitively Mode-Locked Cavity-Enhanced Absorption Spectroscopy (RML-CEAS for Near-Infrared Gas Sensing

    Directory of Open Access Journals (Sweden)

    Qixin He

    2017-12-01

    Full Text Available A Pound-Drever-Hall (PDH-based mode-locked cavity-enhanced sensor system was developed using a distributed feedback diode laser centered at 1.53 µm as the laser source. Laser temperature scanning, bias control of the piezoelectric ceramic transducer (PZT and proportional-integral-derivative (PID feedback control of diode laser current were used to repetitively lock the laser modes to the cavity modes. A gas absorption spectrum was obtained by using a series of absorption data from the discrete mode-locked points. The 15 cm-long Fabry-Perot cavity was sealed using an enclosure with an inlet and outlet for gas pumping and a PZT for cavity length tuning. The performance of the sensor system was evaluated by conducting water vapor measurements. A linear relationship was observed between the measured absorption signal amplitude and the H2O concentration. A minimum detectable absorption coefficient of 1.5 × 10–8 cm–1 was achieved with an averaging time of 700 s. This technique can also be used for the detection of other trace gas species by targeting the corresponding gas absorption line.

  4. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm

    NARCIS (Netherlands)

    Heck, M.J.R.; Salumbides, E.J.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Veldhoven, van P.J.; Nötzel, R.; Eikema, K.S.E.; Ubachs, W.

    2009-01-01

    For the first time a detailed study of hybrid mode-locking in two- section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase

  5. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  6. Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

    Science.gov (United States)

    Link, S M; Maas, D J H C; Waldburger, D; Keller, U

    2017-06-16

    Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

  7. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  8. Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

    Science.gov (United States)

    Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

    1991-04-01

    The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

  9. Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 μm.

    Science.gov (United States)

    Lagatsky, A A; Calvez, S; Gupta, J A; Kisel, V E; Kuleshov, N V; Brown, C T A; Dawson, M D; Sibbett, W

    2011-05-09

    Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively. Optimised pulse durations of 386 fs were produced with an average power of 235 mW at 2029 nm. © 2011 Optical Society of America

  10. Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

    Science.gov (United States)

    Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

    2014-01-01

    We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

  11. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

    International Nuclear Information System (INIS)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm −1 and the disappearance of the 2D-band peak at 2700 cm −1 . The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth. (letter)

  12. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  13. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

  14. 12 nJ 2 μm dissipative soliton fiber laser

    International Nuclear Information System (INIS)

    Yang, Nan; Huang, Chongyuan; Tang, Yulong; Xu, Jianqiu

    2015-01-01

    We report high-energy 2 μm dissipative soliton generation from a passively mode-locked thulium-doped fiber laser with a semiconductor saturable absorber mirror. Self-starting stable mode-locking has been achieved with pulse energy of 12.07 nJ, pulse width of 43 ps and average power of 263 mW at a repetition rate of 21.79 MHz. The laser spectral width is ∼2.65 nm with a center wavelength of 1928.2 nm. To the best of our knowledge, this is the highest single pulse energy reported to date directly from a passively mode-locked thulium-doped fiber laser. (letter)

  15. Passive mode locking of 2.09 microm Cr,Tm,Ho:Y3Sc2Al3O12 laser using PbS quantum-dot-doped glass.

    Science.gov (United States)

    Denisov, Igor A; Skoptsov, Nikolai A; Gaponenko, Maxim S; Malyarevich, Alexander M; Yumashev, Konstantin V; Lipovskii, Andrei A

    2009-11-01

    Passive Q-switched mode locking of a 2.09 microm flashlamp-pumped Cr(3+),Tm(3+),Ho(3+):Y(3)Sc(2)Al(3)O(12) laser by use of a phosphate glass doped with PbS quantum dots of 5 nm in radius was demonstrated. Mode-locked pulses of 290 ps in duration and up to 0.5 mJ in energy were registered.

  16. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-01

    Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  17. Asymmetric dual-loop feedback to suppress spurious tones and reduce timing jitter in self-mode-locked quantum-dash lasers emitting at 155 μm

    Science.gov (United States)

    Asghar, Haroon; McInerney, John G.

    2017-09-01

    We demonstrate an asymmetric dual-loop feedback scheme to suppress external cavity side-modes induced in self-mode-locked quantum-dash lasers with conventional single and dual-loop feedback. In this letter, we achieved optimal suppression of spurious tones by optimizing the length of second delay time. We observed that asymmetric dual-loop feedback, with large (~8x) disparity in cavity lengths, eliminates all external-cavity side-modes and produces flat RF spectra close to the main peak with low timing jitter compared to single-loop feedback. Significant reduction in RF linewidth and reduced timing jitter was also observed as a function of increased second feedback delay time. The experimental results based on this feedback configuration validate predictions of recently published numerical simulations. This interesting asymmetric dual-loop feedback scheme provides simplest, efficient and cost effective stabilization of side-band free optoelectronic oscillators based on mode-locked lasers.

  18. Absolute instability of polaron mode in semiconductor magnetoplasma

    Science.gov (United States)

    Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

    2018-01-01

    Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

  19. Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

    Science.gov (United States)

    Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

    2018-04-02

    Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

  20. Phase Locking of a 2.7 THz Quantum Cascade Laser to a Microwave Reference

    Science.gov (United States)

    Khosropanah, P.; Baryshev, A.; Zhang, W.; Jellema, W.; Hovenier, J. N.; Gao, J. R.; Klapwijk, T. M.; Paveliev, D. G.; Williams, B. S.; Hu, Q.; hide

    2009-01-01

    We demonstrate the phase locking of a 2.7 THz metal-metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain (x 12) from a microwave synthesizer at approx. 15 GHz. Both laser and reference radiations are coupled into a bolometer mixer, resulting in a beat signal, which is fed into a phase-lock loop. The spectral analysis of the beat signal confirms that the QCL is phase locked. This result opens the possibility to extend heterodyne interferometers into the far-infrared range.

  1. Multistabilities and symmetry-broken one-color and two-color states in closely coupled single-mode lasers.

    Science.gov (United States)

    Clerkin, Eoin; O'Brien, Stephen; Amann, Andreas

    2014-03-01

    We theoretically investigate the dynamics of two mutually coupled, identical single-mode semi-conductor lasers. For small separation and large coupling between the lasers, symmetry-broken one-color states are shown to be stable. In this case the light outputs of the lasers have significantly different intensities while at the same time the lasers are locked to a single common frequency. For intermediate coupling we observe stable symmetry-broken two-color states, where both lasers lase simultaneously at two optical frequencies which are separated by up to 150 GHz. Using a five-dimensional model, we identify the bifurcation structure which is responsible for the appearance of symmetric and symmetry-broken one-color and two-color states. Several of these states give rise to multistabilities and therefore allow for the design of all-optical memory elements on the basis of two coupled single-mode lasers. The switching performance of selected designs of optical memory elements is studied numerically.

  2. Passively model-locked Nd: YAG laser with a component GaAs

    International Nuclear Information System (INIS)

    Zhang Zhuhong; Qian Liejia; Chen Shaohe; Fan Dianyuan; Mao Hongwei

    1992-01-01

    An all solid-state passively mode-locked Nd: YAG laser with a 400 μm, (100) oriented GaAs component is reported for the first time and model locked pulses with a duration of 16 ps, average energy of 10 μJ were obtained with a probability of 90%

  3. Optically stabilized Erbium fiber frequency comb with hybrid mode-locking and a broad tunable range of repetition rate.

    Science.gov (United States)

    Yang, Honglei; Wu, Xuejian; Zhang, Hongyuan; Zhao, Shijie; Yang, Lijun; Wei, Haoyun; Li, Yan

    2016-12-01

    We present an optically stabilized Erbium fiber frequency comb with a broad repetition rate tuning range based on a hybrid mode-locked oscillator. We lock two comb modes to narrow-linewidth reference lasers in turn to investigate the best performance of control loops. The control bandwidth of fast and slow piezoelectric transducers reaches 70 kHz, while that of pump current modulation with phase-lead compensation is extended to 32 kHz, exceeding laser intrinsic response. Eventually, simultaneous lock of both loops is realized to totally phase-stabilize the comb, which will facilitate precision dual-comb spectroscopy, laser ranging, and timing distribution. In addition, a 1.8-MHz span of the repetition rate is achieved by an automatic optical delay line that is helpful in manufacturing a secondary comb with a similar repetition rate. The oscillator is housed in a homemade temperature-controlled box with an accuracy of ±0.02  K, which not only keeps high signal-to-noise ratio of the beat notes with reference lasers, but also guarantees self-starting at the same mode-locking every time.

  4. Anomalous normal mode oscillations in semiconductor microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H. [Univ. of Oregon, Eugene, OR (United States). Dept. of Physics; Hou, H.Q.; Hammons, B.E. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities.

  5. High-resolution photoluminescence electro-modulation microscopy by scanning lock-in

    Science.gov (United States)

    Koopman, W.; Muccini, M.; Toffanin, S.

    2018-04-01

    Morphological inhomogeneities and structural defects in organic semiconductors crucially determine the charge accumulation and lateral transport in organic thin-film transistors. Photoluminescence Electro-Modulation (PLEM) microscopy is a laser-scanning microscopy technique that relies on the modulation of the thin-film fluorescence in the presence of charge-carriers to image the spatial distribution of charges within the active organic semiconductor. Here, we present a lock-in scheme based on a scanning beam approach for increasing the PLEM microscopy resolution and contrast. The charge density in the device is modulated by a sinusoidal electrical signal, phase-locked to the scanning beam of the excitation laser. The lock-in detection scheme is achieved by acquiring a series of images with different phases between the beam scan and the electrical modulation. Application of high resolution PLEM to an organic transistor in accumulation mode demonstrates its potential to image local variations in the charge accumulation. A diffraction-limited precision of sub-300 nm and a signal to noise ratio of 21.4 dB could be achieved.

  6. Multi-longitudinal-mode micro-laser model

    Science.gov (United States)

    Staliunas, Kestutis

    2017-10-01

    We derive a convenient model for broad aperture micro-lasers, such as microchip lasers, broad area semiconductor lasers, or VCSELs, taking into account several longitudinal mode families. We provide linear stability analysis, and show characteristic spatio-temporal dynamics in such multi-longitudinal mode laser models. Moreover, we derive the coupled mode model in the presence of intracavity refraction index modulation (intracavity photonic crystal). Contribution to the Topical Issue "Theory and Applications of the Lugiato-Lefever Equation", edited by Yanne K. Chembo, Damia Gomila, Mustapha Tlidi, Curtis R. Menyuk.

  7. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  8. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  9. Injection-locking of terahertz quantum cascade lasers up to 35GHz using RF amplitude modulation.

    Science.gov (United States)

    Gellie, Pierre; Barbieri, Stefano; Lampin, Jean-François; Filloux, Pascal; Manquest, Christophe; Sirtori, Carlo; Sagnes, Isabelle; Khanna, Suraj P; Linfield, Edmund H; Davies, A Giles; Beere, Harvey; Ritchie, David

    2010-09-27

    We demonstrate that the cavity resonance frequency - the round-trip frequency - of Terahertz quantum cascade lasers can be injection-locked by direct modulation of the bias current using an RF source. Metal-metal and single-plasmon waveguide devices with roundtrip frequencies up to 35GHz have been studied, and show locking ranges above 200MHz. Inside this locking range the laser round-trip frequency is phase-locked, with a phase noise determined by the RF-synthesizer. We find a square-root dependence of the locking range with RF-power in agreement with classical injection-locking theory. These results are discussed in the context of mode-locking operation.

  10. LD end pumped mode locked and cavity dumped Nd:YAP laser at 1.34 μm

    Science.gov (United States)

    Wang, X.; Wang, S.; Rhee, H.; Eichler, H. J.; Meister, S.

    2011-06-01

    We report a LD end pumped actively mode locked, passively Q switched and cavity dumped Nd:YAP laser at 1.34 μm. The dumped output pulse energy of 160 μJ is obtained at a repetition rate of 10 Hz. Passing through a LD end pumped, double-passed Nd:YAP amplifier the pulse energy is amplified to 1.44 mJ. The corresponding amplification factor is 9. Stimulated Raman scattering experiment is taken with a 9 mm long PbWO4 Raman crystal. Maximum of 20% Raman conversion is reached.

  11. Unidirectional, dual-comb lasing under multiple pulse formation mechanisms in a passively mode-locked fiber ring laser

    Science.gov (United States)

    Liu, Ya; Zhao, Xin; Hu, Guoqing; Li, Cui; Zhao, Bofeng; Zheng, Zheng

    2016-09-01

    Dual-comb lasers from which asynchronous ultrashort pulses can be simultaneously generated have recently become an interesting research subject. They could be an intriguing alternative to the current dual-laser optical-frequency-comb source with highly sophisticated electronic control systems. If generated through a common light path traveled by all pulses, the common-mode noises between the spectral lines of different pulse trains could be significantly reduced. Therefore, coherent dual-comb generation from a completely common-path, unidirectional lasing cavity would be an interesting territory to explore. In this paper, we demonstrate such a dual-comb lasing scheme based on a nanomaterial saturable absorber with additional pulse narrowing and broadening mechanisms concurrently introduced into a mode-locked fiber laser. The interactions between multiple soliton formation mechanisms result in unusual bifurcation into two-pulse states with quite different characteristics. Simultaneous oscillation of pulses with four-fold difference in pulsewidths and tens of Hz repetition rate difference is observed. The coherence between these spectral-overlapped, picosecond and femtosecond pulses is further verified by the corresponding asynchronous cross-sampling and dual-comb spectroscopy measurements.

  12. Technique for long and absolute distance measurement based on laser pulse repetition frequency sweeping

    Science.gov (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, A.; Jost, Michael; Rebordão, J. M.

    2017-11-01

    In this work we present a technique to perform long and absolute distance measurements based on mode-locked diode lasers. Using a Michelson interferometer, it is possible to produce an optical cross-correlation between laser pulses of the reference arm with the pulses from the measurement arm, adjusting externally their degree of overlap either changing the pulse repetition frequency (PRF) or the position of the reference arm mirror for two (or more) fixed frequencies. The correlation of the travelling pulses for precision distance measurements relies on ultra-short pulse durations, as the uncertainty associated to the method is dependent on the laser pulse width as well as on a highly stable PRF. Mode-locked Diode lasers are a very appealing technology for its inherent characteristics, associated to compactness, size and efficiency, constituting a positive trade-off with regard to other mode-locked laser sources. Nevertheless, main current drawback is the non-availability of frequency-stable laser diodes. The laser used is a monolithic mode-locked semiconductor quantum-dot (QD) laser. The laser PRF is locked to an external stabilized RF reference. In this work we will present some of the preliminary results and discuss the importance of the requirements related to laser PRF stability in the final metrology system accuracy.

  13. Performance Comparison of Mode-Locked Erbium-Doped Fiber Laser with Nonlinear Polarization Rotation and Saturable Absorber Approaches

    International Nuclear Information System (INIS)

    Ismail, M. A.; Tan, S. J.; Shahabuddin, N. S.; Harun, S. W.; Arof, H.; Ahmad, H.

    2012-01-01

    A mode-locked erbium-doped fiber laser (EDFL) is demonstrated using a highly concentrated erbium-doped fiber (EDF) as the gain medium in a ring configuration with and without a saturable absorber (SA). Without the SA, the proposed laser generates soliton pulses with a repetition rate of 12 MHz, pulse width of 1.11 ps and energy pulse of 1.6 pJ. By incorporating SA in the ring cavity, the optical output of the laser changes from soliton to stretched pulses due to the slight change in the group velocity dispersion. With the SA, a cleaner pulse is obtained with a repetition rate of 11.3 MHz, a pulse width of 0.58 ps and a pulse energy of 2.3 pJ. (fundamental areas of phenomenology(including applications))

  14. Coupled optical resonance laser locking.

    Science.gov (United States)

    Burd, S C; du Toit, P J W; Uys, H

    2014-10-20

    We have demonstrated simultaneous laser frequency stabilization of a UV and IR laser, to coupled transitions of ions in the same spectroscopic sample, by detecting only the absorption of the UV laser. Separate signals for locking the different lasers are obtained by modulating each laser at a different frequency and using lock-in detection of a single photodiode signal. Experimentally, we simultaneously lock a 369 nm and a 935 nm laser to the (2)S(1/2) → (2)(P(1/2) and (2)D(3/2) → (3)D([3/2]1/2) transitions, respectively, of Yb(+) ions generated in a hollow cathode discharge lamp. Stabilized lasers at these frequencies are required for cooling and trapping Yb(+) ions, used in quantum information and in high precision metrology experiments. This technique should be readily applicable to other ion and neutral atom systems requiring multiple stabilized lasers.

  15. All-fiber Ho-doped mode-locked oscillator based on a graphene saturable absorber

    Czech Academy of Sciences Publication Activity Database

    Sotor, J.; Pawliszewska, M.; Sobon, G.; Kaczmarek, P.; Przewolka, A.; Pasternak, I.; Cajzl, Jakub; Peterka, Pavel; Honzátko, Pavel; Kašík, Ivan; Strupinski, W.; Abramski, K.

    2016-01-01

    Roč. 41, č. 11 (2016), s. 2592-2595 ISSN 0146-9592 R&D Projects: GA ČR GA14-35256S; GA MŠk(CZ) LD15122 Institutional support: RVO:67985882 Keywords : Fiber lasers * Graphene * Mode-locked oscillators Subject RIV: BH - Optics , Masers, Lasers Impact factor: 3.416, year: 2016

  16. Ultrafast spectral dynamics of dual-color-soliton intracavity collision in a mode-locked fiber laser

    Science.gov (United States)

    Wei, Yuan; Li, Bowen; Wei, Xiaoming; Yu, Ying; Wong, Kenneth K. Y.

    2018-02-01

    The single-shot spectral dynamics of dual-color-soliton collisions inside a mode-locked laser is experimentally and numerically investigated. By using the all-optically dispersive Fourier transform, we spectrally unveil the collision-induced soliton self-reshaping process, which features dynamic spectral fringes over the soliton main lobe, and the rebuilding of Kelly sidebands with wavelength drifting. Meanwhile, the numerical simulations validate the experimental observation and provide additional insights into the physical mechanism of the collision-induced spectral dynamics from the temporal domain perspective. It is verified that the dynamic interference between the soliton and the dispersive waves is responsible for the observed collision-induced spectral evolution. These dynamic phenomena not only demonstrate the role of dispersive waves in the sophisticated soliton interaction inside the laser cavity, but also facilitate a deeper understanding of the soliton's inherent stability.

  17. Phase noise reduction by self-phase locking in semiconductor lasers using phase conjugate feedback

    DEFF Research Database (Denmark)

    Petersen, Lykke; Gliese, Ulrik Bo; Nielsen, Torben Nørskov

    1994-01-01

    noise takes a finite-low value corresponding to a state of first-order self-phase locking of the laser. As a result, the spectral shape of the laser signal does not remain Lorentzian but collapses around the carrier to a delta function with a close to carrier noise level of less than -137 d...

  18. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  19. Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

    International Nuclear Information System (INIS)

    Li, T; Zhao, S; Li, Y; Zhuo, Z; Yang, K; Li, G; Li, D; Yu, Z

    2009-01-01

    A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In 0.25 Ga 0.75 As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In 0.25 Ga 0.75 As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%

  20. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.

    2012-01-01

    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  1. Phase locking of a 2.7 THz quantum cascade laser to a microwave reference

    NARCIS (Netherlands)

    Khosropanah, P.; Baryshev, A.; Zhang, W.; Jellema, W.; Hovenier, J.N.; Gao, J.R.; Klapwijk, T.M.; Paveliev, D.G.; Williams, B.S.; Kumar, S.; Hu, Q.; Reno, J.L.; Klein, B.; Hesler, J.L.

    2009-01-01

    We demonstrate the phase locking of a 2.7 THz metal–metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain

  2. Phase locking of a 2.7 THz quantum cascade laser to a microwave reference

    NARCIS (Netherlands)

    Khosropanah, P.; Baryshev, A.; Zhang, W.; Jellema, W.; Hovenier, J. N.; Gao, J. R.; Klapwijk, T. M.; Paveliev, D. G.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.; Klein, B.; Hesler, J. L.

    2009-01-01

    We demonstrate the phase locking of a 2.7 THz metal-metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain

  3. Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

    Science.gov (United States)

    Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

    2018-02-01

    This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

  4. Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

    Science.gov (United States)

    Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

    2018-01-01

    Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

  5. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  6. Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

    2015-12-15

    Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Experimental investigations of pulse shape control in passively mode-locked fiber lasers with net-normal dispersion

    International Nuclear Information System (INIS)

    Wang, L R; Han, D D

    2013-01-01

    Pulse shape control in passively mode-locked fiber lasers with net-normal dispersion is investigated experimentally. Three kinds of pulses with different spectral and temporal shapes are observed, and their pulse-shaping mechanisms are discussed. After a polarization-resolved system external to the cavity, the maximum intensity differences of the two polarization components for the rectangular-spectrum (RS), Gaussian-spectrum (GS), and super-broadband (SB) pulses are measured as ∼20 dB, ∼15 dB, and ∼1 dB, respectively. It is suggested that the equivalent saturable absorption effect plays an increasingly important role from the RS to GS and then to SB pulses in the pulse-shaping processes, while the spectral filtering effect declines. This work could help in systematically understanding pulse formation and proposing guidelines for the realization of pulses with better performance in fiber lasers. (paper)

  8. Locked modes and magnetic field errors in MST

    International Nuclear Information System (INIS)

    Almagri, A.F.; Assadi, S.; Prager, S.C.; Sarff, J.S.; Kerst, D.W.

    1992-06-01

    In the MST reversed field pinch magnetic oscillations become stationary (locked) in the lab frame as a result of a process involving interactions between the modes, sawteeth, and field errors. Several helical modes become phase locked to each other to form a rotating localized disturbance, the disturbance locks to an impulsive field error generated at a sawtooth crash, the error fields grow monotonically after locking (perhaps due to an unstable interaction between the modes and field error), and over the tens of milliseconds of growth confinement degrades and the discharge eventually terminates. Field error control has been partially successful in eliminating locking

  9. Correlations between locked modes and impurity influxes

    Energy Technology Data Exchange (ETDEWEB)

    Fishpool, G M [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking; Lawson, K D [UKAEA Culham Lab., Abingdon (United Kingdom)

    1994-07-01

    An analysis of pulses that were disturbed by medium Z impurity influxes (Cl, Cr, Fe and Ni) recorded during the 91/92 JET operations, has demonstrated that such influxes can result in MHD modes which subsequently ``lock``. A correlation is found between the power radiated by the influx and the time difference between the start of the influx and the beginning of the locked mode. The growth in the amplitude of the locked mode itself can lead to further impurity influxes. A correlation is noted between intense influxes (superior to 10 MW) and the mode ``unlocking``. (authors). 4 refs., 4 figs.

  10. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

    Science.gov (United States)

    Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

    2018-02-01

    Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

  11. All-fiber radially/azimuthally polarized lasers based on mode coupling of tapered fibers.

    Science.gov (United States)

    Mao, Dong; He, Zhiwen; Lu, Hua; Li, Mingkun; Zhang, Wending; Cui, Xiaoqi; Jiang, Biqiang; Zhao, Jianlin

    2018-04-01

    We demonstrate a mode converter with an insertion loss of 0.36 dB based on mode coupling of tapered single-mode and two-mode fibers, and realize all-fiber flexible cylindrical vector lasers at 1550 nm. Attributing to the continuous distribution of a tangential electric field at taper boundaries, the laser is switchable between the radially and azimuthally polarized states by adjusting the input polarization. In the temporal domain, the operation is controllable among continuous-wave, Q-switched, and mode-locked statuses by changing the saturable absorber or pump strength. The duration of Q-switched radially/azimuthally polarized laser spans from 10.4/10.8 to 6/6.4 μs at the pump range of 38 to 58 mW, while that of the mode-locked pulse varies from 39.2/31.9 to 5.6/5.2 ps by controlling the laser bandwidth. The proposed laser combines the features of a cylindrical vector beam, a fiber laser, and an ultrafast pulse, providing a special and cost-effective source for practical applications.

  12. Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

    Directory of Open Access Journals (Sweden)

    Martijn J.R. Heck

    2015-09-01

    Full Text Available A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.

  13. Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Schilling, M.; Bouayad-Amine, J.; Feeser, T.; Haisch, H.; Kuehn, E.; Lach, E.; Satzke, K.; Weber, J.; Zielinski, E. [Alcatel Telecom, Stuttgart (Germany). Research Div.

    1996-12-31

    The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO{sub 2} patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths < 13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 {micro}m wavelength.

  14. Observation of stable bound soliton with dual-wavelength in a passively mode-locked Er-doped fiber laser

    International Nuclear Information System (INIS)

    Zheng Yu; Tian Jin-Rong; Dong Zi-Kai; Xu Run-Qin; Li Ke-Xuan; Song Yan-Rong

    2017-01-01

    A phase-locked bound state soliton with dual-wavelength is observed experimentally in a passively mode-locked Er-doped fiber (EDF) laser with a fiber loop mirror (FLM). The pulse duration of the soliton is 15 ps and the peak-to-peak separation is 125 ps. The repetition rate of the pulse sequence is 3.47 MHz. The output power is 11.8 mW at the pump power of 128 mW, corresponding to the pulse energy of 1.52 nJ. The FLM with a polarization controller can produce a comb spectrum, which acts as a filter. By adjusting the polarization controller or varying the pump power, the central wavelength of the comb spectrum can be tuned. When it combines with the reflective spectrum of the fiber Bragg grating, the total spectrum of the cavity can be cleaved into two parts, then the bound state soliton with dual-wavelength at 1549.7 nm and 1550.4 nm is obtained. (paper)

  15. Note: Digital laser frequency auto-locking for inter-satellite laser ranging.

    Science.gov (United States)

    Luo, Yingxin; Li, Hongyin; Yeh, Hsien-Chi

    2016-05-01

    We present a prototype of a laser frequency auto-locking and re-locking control system designed for laser frequency stabilization in inter-satellite laser ranging system. The controller has been implemented on field programmable gate arrays and programmed with LabVIEW software. The controller allows initial frequency calibrating and lock-in of a free-running laser to a Fabry-Pérot cavity. Since it allows automatic recovery from unlocked conditions, benefit derives to automated in-orbit operations. Program design and experimental results are demonstrated.

  16. Note: Digital laser frequency auto-locking for inter-satellite laser ranging

    International Nuclear Information System (INIS)

    Luo, Yingxin; Yeh, Hsien-Chi; Li, Hongyin

    2016-01-01

    We present a prototype of a laser frequency auto-locking and re-locking control system designed for laser frequency stabilization in inter-satellite laser ranging system. The controller has been implemented on field programmable gate arrays and programmed with LabVIEW software. The controller allows initial frequency calibrating and lock-in of a free-running laser to a Fabry-Pérot cavity. Since it allows automatic recovery from unlocked conditions, benefit derives to automated in-orbit operations. Program design and experimental results are demonstrated.

  17. Note: Digital laser frequency auto-locking for inter-satellite laser ranging

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Yingxin; Yeh, Hsien-Chi, E-mail: yexianji@mail.hust.edu.cn [MOE Key Laboratory of Fundamental Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Li, Hongyin [MOE Key Laboratory of Fundamental Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Automation, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-05-15

    We present a prototype of a laser frequency auto-locking and re-locking control system designed for laser frequency stabilization in inter-satellite laser ranging system. The controller has been implemented on field programmable gate arrays and programmed with LabVIEW software. The controller allows initial frequency calibrating and lock-in of a free-running laser to a Fabry-Pérot cavity. Since it allows automatic recovery from unlocked conditions, benefit derives to automated in-orbit operations. Program design and experimental results are demonstrated.

  18. Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

    Science.gov (United States)

    Dyksik, Mateusz; Motyka, Marcin; Kurka, Marcin; Ryczko, Krzysztof; Misiewicz, Jan; Schade, Anne; Kamp, Martin; Höfling, Sven; Sęk, Grzegorz

    2017-11-01

    Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

  19. Comparison of Monolithic Optical Frequency Comb Generators Based on Passively Mode-Locked Lasers for Continuous Wave mm-Wave and Sub-THz Generation

    DEFF Research Database (Denmark)

    Criado, A. R.; de Dios, C.; Acedo, P.

    2012-01-01

    In this paper, two different Passive Mode-Locked Laser Diodes (PMLLD) structures, a Fabry–Perot cavity and a ring cavity laser are characterized and evaluated as monolithic Optical Frequency Comb Generators (OFCG) for CW sub-THz generation. An extensive characterization of the devices under study...... is carried out based on an automated measurement system that systematically evaluates the dynamic characteristics of the devices, focusing on the figures of merit that define the optimum performance of a pulsed laser source when considered as an OFCG. Sub-THz signals generated with both devices at 60 GHz...... topologies that can be used for the implementation of photonic integrated sub-THz CW generation....

  20. Mode-locked thin-disk lasers and their potential application for high-power terahertz generation

    Science.gov (United States)

    Saraceno, Clara J.

    2018-04-01

    The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

  1. Spectrally resolved modal characteristics of leaky-wave-coupled quantum cascade phase-locked laser arrays

    Science.gov (United States)

    Sigler, Chris; Gibson, Ricky; Boyle, Colin; Kirch, Jeremy D.; Lindberg, Donald; Earles, Thomas; Botez, Dan; Mawst, Luke J.; Bedford, Robert

    2018-01-01

    The modal characteristics of nonresonant five-element phase-locked arrays of 4.7-μm emitting quantum cascade lasers (QCLs) have been studied using spectrally resolved near- and far-field measurements and correlated with results of device simulation. Devices are fabricated by a two-step metal-organic chemical vapor deposition process and operate predominantly in an in-phase array mode near threshold, although become multimode at higher drive levels. The wide spectral bandwidth of the QCL's core region is found to be a factor in promoting multispatial-mode operation at high drive levels above threshold. An optimized resonant-array design is identified to allow sole in-phase array-mode operation to high drive levels above threshold, and indicates that for phase-locked laser arrays full spatial coherence to high output powers does not require full temporal coherence.

  2. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  3. Crisis route to chaos in semiconductor lasers subjected to external optical feedback

    Science.gov (United States)

    Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

    2018-03-01

    Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

  4. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  5. Testing ultrafast mode-locking at microhertz relative optical linewidth.

    Science.gov (United States)

    Martin, Michael J; Foreman, Seth M; Schibli, T R; Ye, Jun

    2009-01-19

    We report new limits on the phase coherence of the ultrafast mode-locking process in an octave-spanning Ti:sapphire comb.We find that the mode-locking mechanism correlates optical phase across a full optical octave with less than 2.5 microHZ relative linewidth. This result is at least two orders of magnitude below recent predictions for quantum-limited individual comb-mode linewidths, verifying that the mode-locking mechanism strongly correlates quantum noise across the comb spectrum.

  6. Testing ultrafast mode-locking at microhertz relative optical linewidth

    OpenAIRE

    Martin, Michael J.; Foreman, Seth M.; Schibli, T. R.; Ye, Jun

    2008-01-01

    We report new limits on the phase coherence of the ultrafast mode-locking process in an octave-spanning Ti:sapphire comb. We find that the mode-locking mechanism correlates optical phase across a full optical octave with less than 2.5 micro Hz relative linewidth. This result is at least two orders of magnitude below recent predictions for quantum-limited individual comb-mode linewidths, verifying that the mode-locking mechanism strongly correlates quantum noise across the comb spectrum.

  7. Coupled optical resonance laser locking

    CSIR Research Space (South Africa)

    Burd, CC

    2014-10-01

    Full Text Available We have demonstrated simultaneous laser frequency stabilization of a UV and IR laser, to coupled transitions of ions in the same spectroscopic sample, by detecting only the absorption of the UV laser. Separate signals for locking the different...

  8. Visualization of hair follicles using high-speed optical coherence tomography based on a Fourier domain mode locking laser

    Science.gov (United States)

    Tsai, M.-T.; Chang, F.-Y.

    2012-04-01

    In this study, a swept-source optical coherence tomography (SS-OCT) system with a Fourier domain mode locking (FDML) laser is proposed for a dermatology study. The homemade FDML laser is one kind of frequency-sweeping light source, which can provide output power of >20 mW and an output spectrum of 65 nm in bandwidth centered at 1300 nm, enabling imaging with an axial resolution of 12 μm in the OCT system. To eliminate the forward scans from the laser output and insert the delayed backward scans, a Mach-Zehnder configuration is implemented. Compared with conventional frequency-sweeping light sources, the FDML laser can achieve much higher scan rates, as high as ˜240 kHz, which can provide a three-dimensional imaging rate of 4 volumes/s. Furthermore, the proposed high-speed SS-OCT system can provide three-dimensional (3D) images with reduced motion artifacts. Finally, a high-speed SS-OCT system is used to visualize hair follicles, demonstrating the potential of this technology as a tool for noninvasive diagnosis of alopecia.

  9. Experimental investigation of the optical injection locking dynamics in single section quantum-dash Fabry-Pérot laser diode for packet based clock recovery applications

    NARCIS (Netherlands)

    Maldonado-Basilio, R.; Parra-Cetina, J.; Latkowski, S.; Calabretta, N.; Landais, P.

    2012-01-01

    An experimental study of the dynamics of a quantum-dash Fabry-Pérot passively mode-locked laser diode is presented. Firstly, the switching on and off characteristic times of the mode-locking mechanism with pulsed biasing current are assessed. Secondly, the locking and unlocking characteristic times

  10. Development of the power control system for semiconductor lasers

    International Nuclear Information System (INIS)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

  11. Generation of 103 fs mode-locked pulses by a gain linewidth-variable Nd,Y:CaF2 disordered crystal.

    Science.gov (United States)

    Qin, Z P; Xie, G Q; Ma, J; Ge, W Y; Yuan, P; Qian, L J; Su, L B; Jiang, D P; Ma, F K; Zhang, Q; Cao, Y X; Xu, J

    2014-04-01

    We have demonstrated a diode-pumped passively mode-locked femtosecond Nd,Y:CaF2 disordered crystal laser for the first time to our knowledge. By choosing appropriate Y-doping concentration, a broad fluorescence linewidth of 31 nm has been obtained from the gain linewidth-variable Nd,Y:CaF2 crystal. With the Nd,Y:CaF2 disordered crystal as gain medium, the mode-locked laser generated pulses with pulse duration as short as 103 fs, average output power of 89 mW, and repetition rate of 100 MHz. To our best knowledge, this is the shortest pulse generated from Nd-doped crystal lasers so far. The research results show that the Nd,Y:CaF2 disordered crystal will be a potential alternative as gain medium of repetitive chirped pulse amplification for high-peak-power lasers.

  12. Physics and Control of Locked Modes in the DIII-D Tokamak

    International Nuclear Information System (INIS)

    Volpe, Francesco

    2017-01-01

    This Final Technical Report summarizes an investigation, carried out under the auspices of the DOE Early Career Award, of the physics and control of non-rotating magnetic islands (''locked modes'') in tokamak plasmas. Locked modes are one of the main causes of disruptions in present tokamaks, and could be an even bigger concern in ITER, due to its relatively high beta (favoring the formation of Neoclassical Tearing Mode islands) and low rotation (favoring locking). For these reasons, this research had the goal of studying and learning how to control locked modes in the DIII-D National Fusion Facility under ITER-relevant conditions of high pressure and low rotation. Major results included: the first full suppression of locked modes and avoidance of the associated disruptions; the demonstration of error field detection from the interaction between locked modes, applied rotating fields and intrinsic errors; the analysis of a vast database of disruptive locked modes, which led to criteria for disruption prediction and avoidance.

  13. Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

    KAUST Repository

    Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

    2018-01-01

    -mode-suppression-ratio was considerably increased in all the cases, reaching as high as ~20 dB in self-injection locked blue laser diode, thus enabling a close to single mode operation. This work paves the way for attaining high speed optical wireless communications by overcoming

  14. High-speed polarization-sensitive OCT at 1060 nm using a Fourier domain mode-locked swept source

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Torzicky, Teresa; Klein, Thomas

    2012-01-01

    sufficiently large datasets. Here, we demonstrate PS-OCT imaging at 350 kHz A-scan rate using a two-channel PS-OCT system in conjunction with a Fourier domain mode-locked laser. The light source spectrum spans up to 100nm around the water absorption minimum at 1060 nm. By modulating the laser pump current, we...

  15. Physics and Control of Locked Modes in the DIII-D Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Volpe, Francesco [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics

    2017-01-30

    This Final Technical Report summarizes an investigation, carried out under the auspices of the DOE Early Career Award, of the physics and control of non-rotating magnetic islands (“locked modes”) in tokamak plasmas. Locked modes are one of the main causes of disruptions in present tokamaks, and could be an even bigger concern in ITER, due to its relatively high beta (favoring the formation of Neoclassical Tearing Mode islands) and low rotation (favoring locking). For these reasons, this research had the goal of studying and learning how to control locked modes in the DIII-D National Fusion Facility under ITER-relevant conditions of high pressure and low rotation. Major results included: the first full suppression of locked modes and avoidance of the associated disruptions; the demonstration of error field detection from the interaction between locked modes, applied rotating fields and intrinsic errors; the analysis of a vast database of disruptive locked modes, which led to criteria for disruption prediction and avoidance.

  16. Phase Locking of Laser Diode Array by Using an Off-Axis External Talbot Cavity

    International Nuclear Information System (INIS)

    Su Zhou-Ping; Zhu Zhuo-Wei; Que Li-Zhi; Zhu Yun; Ji Zhi-Cheng

    2012-01-01

    Phase locking of a laser diode array is demonstrated experimentally by using an off-axis external Talbot cavity with a feedback plane mirror. Due to good spatial mode discrimination, the cavity does not need a spatial filter. By employing the cavity, a clear and stable far-field interference pattern can be observed when the driver current is less than 14 A. In addition, the spectral line width can be reduced to 0.8 nm. The slope efficiency of the phase-locked laser diode array is about 0.62 W/A. (fundamental areas of phenomenology(including applications))

  17. Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

    Science.gov (United States)

    Parekh, Devang

    With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

  18. Self-injection locking of the DFB laser through an external ring fiber cavity: Polarization behavior

    Directory of Open Access Journals (Sweden)

    J.L. Bueno Escobedo

    Full Text Available We study stability of self-injection locking realized with DFB laser coupled with an external fiber optic ring cavity. Polarization behavior of the radiation circulating in the feedback loop is reported. Two regimes of mode hopping have been observed; one of them is accompanied by polarization bistability involving two orthogonal polarization states. Keywords: Self-injection locking, Polarization, Optical fiber

  19. Scaling laws for mode lockings in circle maps

    International Nuclear Information System (INIS)

    Cvitanovic, P.; Shraiman, B.; Soederberg, B.

    1985-06-01

    The self-similar structure of mode lockings for circle maps is studied by means of the associated Farey trees. We investigate numerically several classes of scaling relations implicit in the Farey organization of mode lockings and discuss the extent to which they lead to universal scaling laws. (orig.)

  20. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

    2018-05-01

    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  1. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

    Science.gov (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

    2017-08-03

    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  2. A low-cost, tunable laser lock without laser frequency modulation

    Science.gov (United States)

    Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.

    2015-05-01

    Many experiments in optical physics require laser frequency stabilization. This can be achieved by locking to an atomic reference using saturated absorption spectroscopy. Often, the laser frequency is modulated and phase sensitive detection used. This method, while well-proven and robust, relies on expensive components, can introduce an undesirable frequency modulation into the laser, and is not easily frequency tuned. Here, we report a simple locking scheme similar to those implemented previously. We modulate the atomic resonances in a saturated absorption setup with an AC magnetic field created by a single solenoid. The same coil applies a DC field that allows tuning of the lock point. We use an auto-balanced detector to make our scheme more robust against laser power fluctuations and stray magnetic fields. The coil, its driver, and the detector are home-built with simple, cheap components. Our technique is low-cost, simple to setup, tunable, introduces no laser frequency modulation, and only requires one laser. We gratefully acknowledge the financial support of the NSF through Grant # PHY-1206040.

  3. Neural Network Prediction of Disruptions Caused by Locked Modes on J-TEXT Tokamak

    International Nuclear Information System (INIS)

    Ding Yonghua; Jin Xuesong; Chen Zhenzhen; Zhuang Ge

    2013-01-01

    Prediction of disruptions caused by locked modes using the Back-Propagation (BP) neural network is completed on J-TEXT tokamak. The network, which is based on the BP neural network, uses Mirnov coils and locked mode coils signals as input data, and outputs a signal including information of prediction of locked mode. The rate of successful prediction of locked modes is more than 90%. For intrinsic locked mode disruptions, the network can give a prewarning signal about 1 ms ahead of the locking-time. For the disruption caused by resonant magnetic perturbation (RMPs) locked modes, the network can give a prewarning signal about 10 ms ahead of the locking-time

  4. Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator.

    Science.gov (United States)

    Castellano, Fabrizio; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Vitiello, Miriam S

    2016-03-15

    Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology.

  5. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  6. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  7. Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

    Science.gov (United States)

    Jornod, Nayara; Gürel, Kutan; Wittwer, Valentin J.; Brochard, Pierre; Hakobyan, Sargis; Schilt, Stéphane; Waldburger, Dominik; Keller, Ursula; Südmeyer, Thomas

    2018-02-01

    We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of 30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

  8. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  9. A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

    Science.gov (United States)

    Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

    2012-06-18

    By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate transmission is less than 2 dB for all 16 channels.

  10. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  11. Temperature-insensitive laser frequency locking near absorption lines

    International Nuclear Information System (INIS)

    Kostinski, Natalie; Olsen, Ben A.; Marsland, Robert III; McGuyer, Bart H.; Happer, William

    2011-01-01

    Combined magnetically induced circular dichroism and Faraday rotation of an atomic vapor are used to develop a variant of the dichroic atomic vapor laser lock that eliminates lock sensitivity to temperature fluctuations of the cell. Operating conditions that eliminate first-order sensitivity to temperature fluctuations can be determined by low-frequency temperature modulation. This temperature-insensitive gyrotropic laser lock can be accurately understood with a simple model, that is in excellent agreement with observations in potassium vapor at laser frequencies in a 2 GHz range about the 770.1 nm absorption line. The methods can be readily adapted for other absorption lines.

  12. Tilt-tuned etalon locking for tunable laser stabilization.

    Science.gov (United States)

    Gibson, Bradley M; McCall, Benjamin J

    2015-06-15

    Locking to a fringe of a tilt-tuned etalon provides a simple, inexpensive method for stabilizing tunable lasers. Here, we describe the use of such a system to stabilize an external-cavity quantum cascade laser; the locked laser has an Allan deviation of approximately 1 MHz over a one-second integration period, and has a single-scan tuning range of approximately 0.4  cm(-1). The system is robust, with minimal alignment requirements and automated lock acquisition, and can be easily adapted to different wavelength regions or more stringent stability requirements with minor alterations.

  13. Gigahertz repetition rate, sub-femtosecond timing jitter optical pulse train directly generated from a mode-locked Yb:KYW laser.

    Science.gov (United States)

    Yang, Heewon; Kim, Hyoji; Shin, Junho; Kim, Chur; Choi, Sun Young; Kim, Guang-Hoon; Rotermund, Fabian; Kim, Jungwon

    2014-01-01

    We show that a 1.13 GHz repetition rate optical pulse train with 0.70 fs high-frequency timing jitter (integration bandwidth of 17.5 kHz-10 MHz, where the measurement instrument-limited noise floor contributes 0.41 fs in 10 MHz bandwidth) can be directly generated from a free-running, single-mode diode-pumped Yb:KYW laser mode-locked by single-wall carbon nanotube-coated mirrors. To our knowledge, this is the lowest-timing-jitter optical pulse train with gigahertz repetition rate ever measured. If this pulse train is used for direct sampling of 565 MHz signals (Nyquist frequency of the pulse train), the jitter level demonstrated would correspond to the projected effective-number-of-bit of 17.8, which is much higher than the thermal noise limit of 50 Ω load resistance (~14 bits).

  14. Review on the dynamics of semiconductor nanowire lasers

    Science.gov (United States)

    Röder, Robert; Ronning, Carsten

    2018-03-01

    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  15. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

    DEFF Research Database (Denmark)

    Dontabactouny, M.; Piron, R.; Klaime, K.

    2012-01-01

    This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 m...

  16. Mode-locking behavior of Izhikevich neurons under periodic external forcing

    Science.gov (United States)

    Farokhniaee, AmirAli; Large, Edward W.

    2017-06-01

    Many neurons in the auditory system of the brain must encode periodic signals. These neurons under periodic stimulation display rich dynamical states including mode locking and chaotic responses. Periodic stimuli such as sinusoidal waves and amplitude modulated sounds can lead to various forms of n :m mode-locked states, in which a neuron fires n action potentials per m cycles of the stimulus. Here, we study mode-locking in the Izhikevich neurons, a reduced model of the Hodgkin-Huxley neurons. The Izhikevich model is much simpler in terms of the dimension of the coupled nonlinear differential equations compared with other existing models, but excellent for generating the complex spiking patterns observed in real neurons. We obtained the regions of existence of the various mode-locked states on the frequency-amplitude plane, called Arnold tongues, for the Izhikevich neurons. Arnold tongue analysis provides useful insight into the organization of mode-locking behavior of neurons under periodic forcing. We find these tongues for both class-1 and class-2 excitable neurons in both deterministic and noisy regimes.

  17. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  18. Quasi-continuously pumped passively mode-locked 2.4% doped Nd:YAG oscillator-amplifier system in a bounce geometry

    Science.gov (United States)

    Jelínek, Michal; Kubecek, Vaclav; Cech, Miroslav; Hirsl, Petr

    2010-02-01

    We report on oscillator-amplifier system based on two highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG crystals in a diode pumped bounce geometry configuration under quasi-continuous pumping. The oscillator was passively mode-locked by the semiconductor saturable absorber in transmission mode. The output pulse train consisted of 5 pulses with total energy of 270 μJ and pulse duration of 75 ps. The output train from the oscillator was amplified to the energy of 1 mJ by single pass amplifier.

  19. Real-time full-field characterization of transient dissipative soliton dynamics in a mode-locked laser

    Science.gov (United States)

    Ryczkowski, P.; Närhi, M.; Billet, C.; Merolla, J.-M.; Genty, G.; Dudley, J. M.

    2018-04-01

    Dissipative solitons are remarkably localized states of a physical system that arise from the dynamical balance between nonlinearity, dispersion and environmental energy exchange. They are the most universal form of soliton that can exist, and are seen in far-from-equilibrium systems in many fields, including chemistry, biology and physics. There has been particular interest in studying their properties in mode-locked lasers, but experiments have been limited by the inability to track the dynamical soliton evolution in real time. Here, we use simultaneous dispersive Fourier transform and time-lens measurements to completely characterize the spectral and temporal evolution of ultrashort dissipative solitons as their dynamics pass through a transient unstable regime with complex break-up and collisions before stabilization. Further insight is obtained from reconstruction of the soliton amplitude and phase and calculation of the corresponding complex-valued eigenvalue spectrum. These findings show how real-time measurements provide new insights into ultrafast transient dynamics in optics.

  20. The locking and unlocking thresholds for tearing modes in a cylindrical tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Wenlong [CAS Key Laboratory of Geospace Environment and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhu, Ping, E-mail: pzhu@ustc.edu.cn [CAS Key Laboratory of Geospace Environment and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-03-15

    The locking and unlocking thresholds for tearing modes are in general different. In this work, the physics origin for this difference is illustrated from theory analysis, and a numerical procedure is developed to find both locking and unlocking thresholds. In particular, a new scaling law for the unlocking threshold that is valid in both weak and strong rotation regimes has been derived from the lowest amplitude of the RMP (resonant magnetic perturbation) allowed for the locked-mode solution. Above the unlocking threshold, the criterion for the phase-flip instability is extended to identify the entire locked-mode states. Two different regimes of the RMP amplitude in terms of the accessibility of the locked-mode states have been found. In the first regime, the locked-mode state may or may not be accessible depending on the initial conditions of an evolving island. In the second regime, the locked-mode state can always be reached regardless of the initial conditions of the tearing mode. The lowest RMP amplitude for the second regime is determined to be the mode-locking threshold. The different characteristics of the two regimes above the unlocking threshold reveal the underlying physics for the gap between the locking and unlocking thresholds and provide an explanation for the closely related and widely observed hysteresis phenomena in island evolution during the sweeping process of the RMP amplitude up and down across that threshold gap.

  1. Generation of Q-Switched Mode-Locked Erbium-Doped Fiber Laser Operating in Dark Regime

    International Nuclear Information System (INIS)

    Tiu, Zian Cheak; Zarei, Arman; Ahmad, Harith; Harun, Sulaiman Wadi

    2016-01-01

    We demonstrate a stable Q-switched mode-locked erbium-doped fiber laser (EDFL) operating in dark regime based on the nonlinear polarization rotation technique. The EDFL produces a pulse train where the Q-switching envelope is formed by multiple dark pulses. The repetition rate of the Q-switched envelope can be increased from 0.96 kHz to 3.26 kHz, whereas the pulse width reduces from 211 μs to 86 μs. The highest pulse of 479 nJ is obtained at the pump power of 55 mW. It is also observed that the dark pulses inside the Q-switching envelope consist of two parts: square and trailing dark pulses. The shortest pulse width of the dark square pulse is obtained at 40.5 μs when the pump power is fixed at 145 mW. The repetition rate of trailing dark pulses can be increased from 27.62 kHz to 50 kHz as the pump power increases from 55 mW to 145 mW. (paper)

  2. Dynamics of injection locking in a solid-state laser with intracavity second-harmonic generation

    International Nuclear Information System (INIS)

    Zolotoverkh, I I; Lariontsev, E G

    2000-01-01

    The dynamics of oscillation in a solid-state laser with intracavity second-harmonic generation under the influence of an external signal at the second-harmonic frequency injected into its cavity in the presence of feedback at the double frequency is theoretically studied. Boundaries of the regions of injection locking for three stationary laser states differing in the nonlinear phase incursion caused by radiation conversion into the second harmonic are found. Relaxation oscillations in the stationary state of injection locking are studied. It is shown that the second relaxation frequency, which is related to phase perturbations of the second harmonic and perturbations of the phase difference of waves in a nonlinear crystal, is excited in a single-mode solid-state laser in addition to the fundamental frequency of relaxation oscillations. Conditions are found under which relaxation oscillations at the second relaxation frequency are excited. (lasers)

  3. Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

    International Nuclear Information System (INIS)

    Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

    1989-01-01

    Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

  4. Anapole nanolasers for mode-locking and ultrafast pulse generation

    KAUST Repository

    Gongora, J. S. Totero; Miroshnichenko, Andrey E.; Kivshar, Yuri S.; Fratalocchi, Andrea

    2017-01-01

    Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

  5. Anapole nanolasers for mode-locking and ultrafast pulse generation

    KAUST Repository

    Gongora, J. S. Totero

    2017-05-31

    Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

  6. Comparison on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fibre lasers

    Science.gov (United States)

    Yang, Chun-Yu; Lin, Yung-Hsiang; Wu, Chung-Lun; Cheng, Chih-Hsien; Tsai, Din-Ping; Lin, Gong-Ru

    2018-06-01

    Comparisons on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fiber lasers (EDFLs) are performed. As opposed to the graphite nano-particles obtained by physically triturating the graphite foil, the tri-layer graphene nano-sheets is obtained by electrochemically exfoliating the graphite foil. To precisely control the size dispersion and the layer number of the exfoliated graphene nano-sheet, both the bias of electrochemical exfoliation and the speed of centrifugation are optimized. Under a threshold exfoliation bias of 3 volts and a centrifugation at 1000 rpm, graphene nano-sheets with an average diameter of 100  ±  40 nm can be obtained. The graphene nano-sheets with an area density of 15 #/µm2 are directly imprinted onto the end-face of a single-mode fiber made patchcord connector inside the EDFL cavity. Such electrochemically exfoliated graphene nano-sheets show comparable saturable absorption with standard single-graphene and perform the self-amplitude modulation better than physically triturated graphite nano-particles. The linear transmittance and modulation depth of the inserted graphene nano-sheets are 92.5% and 53%, respectively. Under the operation with a power gain of 21.5 dB, the EDFL can be passively mode-locked to deliver a pulsewidth of 454.5 fs with a spectral linewidth of 5.6 nm. The time-bandwidth product of 0.31 is close to the transform limit. The Kelly sideband frequency spacing of 1.34 THz is used to calculate the chirp coefficient as  ‑0.0015.

  7. Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

    Science.gov (United States)

    Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

    2017-04-01

    Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

  8. Time-Gating Processes in Intra-Cavity Mode-Locking Devices Like Saturable Absorbers and Kerr Cells

    Science.gov (United States)

    Prasad, Narasimha; Roychoudhuri, Chandrasekhar

    2010-01-01

    Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.

  9. Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

    International Nuclear Information System (INIS)

    Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

    2005-01-01

    The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

  10. Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

    Science.gov (United States)

    Duerksen, Gary L.; Krainak, Michael A.

    1999-01-01

    Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

  11. Electrically-pumped, broad-area, single-mode photonic crystal lasers.

    Science.gov (United States)

    Zhu, Lin; Chak, Philip; Poon, Joyce K S; DeRose, Guy A; Yariv, Amnon; Scherer, Axel

    2007-05-14

    Planar broad-area single-mode lasers, with modal widths of the order of tens of microns, are technologically important for high-power applications and improved coupling efficiency into optical fibers. They may also find new areas of applications in on-chip integration with devices that are of similar size scales, such as for spectroscopy in microfluidic chambers or optical signal processing with micro-electromechanical systems. An outstanding challenge is that broad-area lasers often require external means of control, such as injection-locking or a frequency/spatial filter to obtain single-mode operation. In this paper, we propose and demonstrate effective index-guided, large-area, edge-emitting photonic crystal lasers driven by pulsed electrical current injection at the optical telecommunication wavelength of 1550 nm. By suitable design of the photonic crystal lattice, our lasers operate in a single mode with a 1/e(2) modal width of 25 microm and a length of 600 microm.

  12. Frequency locking of single-mode 3.5-THz quantum cascade lasers using a gas cell

    NARCIS (Netherlands)

    Ren, Y.; Hovenier, J.N.; Cui, M.; Hayton, D.J.; Gao, J.R.; Klapwijk, T.M.; Shi, S.C.; Kao, T.Y.; Hu, Q.; Reno, J.L.

    2012-01-01

    We report frequency locking of two 3.5-THz third-order distributed feedback (DFB) quantum cascade lasers (QCLs) by using methanol molecular absorption lines, a proportional-integral-derivative controller, and a NbN bolometer. We show that the free-running linewidths of the QCLs are dependent on the

  13. Phase locking of a semiconductor double-quantum-dot single-atom maser

    Science.gov (United States)

    Liu, Y.-Y.; Hartke, T. R.; Stehlik, J.; Petta, J. R.

    2017-11-01

    We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise L =-99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ≈8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.

  14. Q-switching and mode-locking pulse generation with graphene oxide paper-based saturable absorber

    Directory of Open Access Journals (Sweden)

    Sulaiman Wadi Harun

    2015-06-01

    Full Text Available Q-switched and mode-locked erbium-doped fibre lasers (EDFLs are demonstrated by using non-conductive graphene oxide (GO paper as a saturable absorber (SA. A stable and self-starting Q-switched operation was achieved at 1534.4 nm by using a 0.8 m long erbium-doped fibre (EDF as a gain medium. The pulse repetition rate changed from 14.3 to 31.5 kHz, whereas the corresponding pulse width decreased from 32.8 to 13.8 µs as the pump power increased from 22 to 50.5 mW. A narrow spacing dual-wavelength Q-switched EDFL could also be realised by including a photonics crystal fibre and a tunable Bragg filter in the setup. It can operate at a maximum repetition rate of 31 kHz, with a pulse duration of 7.04 µs and pulse energy of 2.8 nJ. Another GOSA was used to realise mode-locked EDFL in a different cavity consisting of a 1.6 m long EDF in conjunction with 1480 nm pumping. The laser generated a soliton pulse train with a repetition rate of 15.62 MHz and pulse width of 870 fs. It is observed that the proposed fibre lasers have a low pulsing threshold pump power as well as a low damage threshold.

  15. High-resolution smile measurement and control of wavelength-locked QCW and CW laser diode bars

    Science.gov (United States)

    Rosenkrantz, Etai; Yanson, Dan; Klumel, Genady; Blonder, Moshe; Rappaport, Noam; Peleg, Ophir

    2018-02-01

    High-power linewidth-narrowed applications of laser diode arrays demand high beam quality in the fast, or vertical, axis. This requires very high fast-axis collimation (FAC) quality with sub-mrad angular errors, especially where laser diode bars are wavelength-locked by a volume Bragg grating (VBG) to achieve high pumping efficiency in solid-state and fiber lasers. The micron-scale height deviation of emitters in a bar against the FAC lens causes the so-called smile effect with variable beam pointing errors and wavelength locking degradation. We report a bar smile imaging setup allowing FAC-free smile measurement in both QCW and CW modes. By Gaussian beam simulation, we establish optimum smile imaging conditions to obtain high resolution and accuracy with well-resolved emitter images. We then investigate the changes in the smile shape and magnitude under thermal stresses such as variable duty cycles in QCW mode and, ultimately, CW operation. Our smile measurement setup provides useful insights into the smile behavior and correlation between the bar collimation in QCW mode and operating conditions under CW pumping. With relaxed alignment tolerances afforded by our measurement setup, we can screen bars for smile compliance and potential VBG lockability prior to assembly, with benefits in both lower manufacturing costs and higher yield.

  16. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  17. Nonlinear Polarization Rotation-Based Mode-Locked Erbium-Doped Fiber Laser with Three Switchable Operation States

    International Nuclear Information System (INIS)

    Tiu Zian Cheak; Tan Sin Jin; Zarei Arman; Ahmad Harith; Harun Sulaiman Wadi

    2014-01-01

    A simple mode-locked erbium-doped fiber laser (EDFL) with three switchable operation states is proposed and demonstrated based on nonlinear polarization rotation. The EDFL generates a stable square pulse at a third harmonic pulse repetition rate of 87 kHz as the 1480 nm pump power increases from the threshold of 17.5 mW to 34.3 mW. The square pulse duration increases from 105 ns to 245 ns as the pump power increases within this region. The pulse operation switches to the second operation state as the pump power is varied from 48.2 mW to 116.7 mW. The laser operates at a fundamental repetition rate of 29 kHz with a fixed pulse width of 8.5 μs within the pump power region. At a pump power of 116.7 mW, the average output power is 3.84 mW, which corresponds to the pulse energy of 131.5 nJ. When the pump power continues to increase, the pulse train experiences unstable oscillation before it reaches the third stable operation state within a pump power region of 138.9 mW to 145.0 mW. Within this region, the EDFL produces a fixed pulse width of 2.8 μs and a harmonic pulse repetition rate of 58 kHz. (fundamental areas of phenomenology(including applications))

  18. Mode-locking in advection-reaction-diffusion systems: An invariant manifold perspective

    Science.gov (United States)

    Locke, Rory A.; Mahoney, John R.; Mitchell, Kevin A.

    2018-01-01

    Fronts propagating in two-dimensional advection-reaction-diffusion systems exhibit a rich topological structure. When the underlying fluid flow is periodic in space and time, the reaction front can lock to the driving frequency. We explain this mode-locking phenomenon using the so-called burning invariant manifolds (BIMs). In fact, the mode-locked profile is delineated by a BIM attached to a relative periodic orbit (RPO) of the front element dynamics. Changes in the type (and loss) of mode-locking can be understood in terms of local and global bifurcations of the RPOs and their BIMs. We illustrate these concepts numerically using a chain of alternating vortices in a channel geometry.

  19. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  20. Phase locking of optically coupled lasers

    International Nuclear Information System (INIS)

    Glova, A F

    2003-01-01

    A review of studies of the properties of radiation from optically coupled lasers is presented. The methods for phase locking the fields in optically coupled lasers of different types are considered and the methods for supermode selection and correction of the radiation pattern are discussed. (review)

  1. Picosecond Laser Pulse Interactions with Metallic and Semiconductor Surfaces.

    Science.gov (United States)

    1984-11-01

    thermometric determination of plasma relaxation is by far more sensitive than direct optical measurements. The solid line in Fig. 4 shows the calculated...passively mode-locked Nd:yttrium aluminum garnet in Si, several researchers have used high picosecond or fem- laser was used to produce single 30-ps, 1.06...these targets to an aluminum backing plate with a silver-epoxy conducting glue (Ablestik). The conductivity of the targets was high enough to make

  2. Relationship Between Locked Modes and Disruptions in the DIII-D Tokamak

    Science.gov (United States)

    Sweeney, Ryan

    This thesis is organized into three body chapters: (1) the first use of naturally rotating tearing modes to diagnose intrinsic error fields is presented with experimental results from the EXTRAP T2R reversed field pinch, (2) a large scale study of locked modes (LMs) with rotating precursors in the DIII-D tokamak is reported, and (3) an in depth study of LM induced thermal collapses on a few DIII-D discharges is presented. The amplitude of naturally rotating tearing modes (TMs) in EXTRAP T2R is modulated in the presence of a resonant field (given by the superposition of the resonant intrinsic error field, and, possibly, an applied, resonant magnetic perturbation (RMP)). By scanning the amplitude and phase of the RMP and observing the phase-dependent amplitude modulation of the resonant, naturally rotating TM, the corresponding resonant error field is diagnosed. A rotating TM can decelerate and lock in the laboratory frame, under the effect of an electromagnetic torque due to eddy currents induced in the wall. These locked modes often lead to a disruption, where energy and particles are lost from the equilibrium configuration on a timescale of a few to tens of milliseconds in the DIII-D tokamak. In fusion reactors, disruptions pose a problem for the longevity of the reactor. Thus, learning to predict and avoid them is important. A database was developed consisting of ˜ 2000 DIII-D discharges exhibiting TMs that lock. The database was used to study the evolution, the nonlinear effects on equilibria, and the disruptivity of locked and quasi-stationary modes with poloidal and toroidal mode numbers m = 2 and n = 1 at DIII-D. The analysis of 22,500 discharges shows that more than 18% of disruptions present signs of locked or quasi-stationary modes with rotating precursors. A parameter formulated by the plasma internal inductance li divided by the safety factor at 95% of the toroidal flux, q95, is found to exhibit predictive capability over whether a locked mode will

  3. Poor fluorinated graphene sheets carboxymethylcellulose polymer composite mode locker for erbium doped fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Mou, Chengbo, E-mail: mouc1@aston.ac.uk, E-mail: a.rozhin@aston.ac.uk; Turitsyn, Sergei; Rozhin, Aleksey, E-mail: mouc1@aston.ac.uk, E-mail: a.rozhin@aston.ac.uk [Aston Institute of Photonic Technologies, Aston University, Aston Triangle, Birmingham B4 7ET (United Kingdom); Arif, Raz [Aston Institute of Photonic Technologies, Aston University, Aston Triangle, Birmingham B4 7ET (United Kingdom); Physics Department, Faculty of Science, University of Sulaimani, Sulaimani, Kurdistan Region (Iraq); Lobach, Anatoly S.; Spitsina, Nataliya G. [Institute of Problems of Chemical Physics RAS, Ac. Semenov Av. 1, Chernogolovka, Moscow Region 142432 (Russian Federation); Khudyakov, Dmitry V. [Institute of Problems of Chemical Physics RAS, Ac. Semenov Av. 1, Chernogolovka, Moscow Region 142432 (Russian Federation); Physics Instrumentation Center of the Institute of General Physics A.M. Prokhorov Russian Academy of Sciences, Troitsk, Moscow Region 142190 (Russian Federation); Kazakov, Valery A. [Keldysh Center, Onezhskaya 8, Moscow 125438 (Russian Federation)

    2015-02-09

    We report poor fluorinated graphene sheets produced by thermal exfoliation embedding in carboxymethylcellulose polymer composite (GCMC) as an efficient mode locker for erbium doped fiber laser. Two GCMC mode lockers with different concentration have been fabricated. The GCMC based mode locked fiber laser shows stable soliton output pulse shaping with repetition rate of 28.5 MHz and output power of 5.5 mW was achieved with the high concentration GCMC, while a slightly higher output power of 6.9 mW was obtained using the low concentration GCMC mode locker.

  4. Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

    International Nuclear Information System (INIS)

    Cotta, E A; Matinaga, F M

    2007-01-01

    We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

  5. Mode-locking in an infinite set of coupled circle maps

    International Nuclear Information System (INIS)

    Alstroem, P.; Ritala, R.K.

    1986-06-01

    We show that the mode-locking in coupled circle maps with random phases is very different from that in a single circle map. A finite nonlinearity K c is needed for a step to appear. The width of the step behaves as (K-K c ) 2 . The complete mode-locking (at K=1 for uncoupled maps) behaves singularly as the coupling is turned on. We argue that our model describes the mode-locking in charge-density-wave materials. Our results are in qualitative agreement with experimental observations by Sherwin and Zettl that only few true steps exist in I-V characteristics and that in addition to these there are some 'incomplete' steps. (orig.)

  6. Semiconductor and ceramic microstructure made by single mode fiber laser

    International Nuclear Information System (INIS)

    Pawlak, R; Tomczyk, M; Walczak, M; Domagalski, P

    2014-01-01

    In the paper the results of micromachining of 3D microstructures of microsystems made from silicon and alumina ceramic using a single mode fiber laser (1064 nm) are presented. The quality of obtained structures and its smallest dimensions with acceptable maintained quality were examined. The influence of variable parameters of laser processing with changing of mapping scale on geometrical features of structures was identified.

  7. A Mode Locked UV-FEL

    CERN Document Server

    Parvin, Parviz

    2004-01-01

    An appropriate resonator has been designed to generate femtosecond mode locked pulses in a UV FEL with the modulator performance based on the gain switching. The gain broadening due to electron energy spread affects on the gain parameters, small signal gain (γ0) and saturation intensity (Is), to determine the optimum output coupling as small.

  8. Relationship between locked modes and thermal quenches in DIII-D

    Science.gov (United States)

    Sweeney, R.; Choi, W.; Austin, M.; Brookman, M.; Izzo, V.; Knolker, M.; La Haye, R. J.; Leonard, A.; Strait, E.; Volpe, F. A.; The DIII-D Team

    2018-05-01

    Locked modes are known to be one of the major causes of disruptions, but the physical mechanisms by which locking leads to disruptions are not well understood. Here we analyze the evolution of the temperature profile in the presence of multiple coexisting locked modes during partial and full thermal quenches. Partial quenches are often observed to be an initial, distinct stage in the full thermal quench. Near the onset of partial quenches, locked island O-points are observed to align with each other on the midplane, and their widths are sufficient to overlap each other, as indicated by the Chirikov parameter. Energy conservation analysis of one partial thermal quench shows that the energy lost is both radiated in the divertor region, and conducted or convected to the divertor. Nonlinear resistive magnetohydrodynamic simulations support the interpretation of stochastic fields causing a partial axisymmetric collapse, though the simulated temperature profile exhibits less degradation than the experimental profiles. In discharges with minimum values of the safety factor above  ∼1.2, locked modes are observed to self-stabilize by inducing, possibly via double tearing modes, a minor disruption that removes their neoclassical drive. These high q min discharges often exhibit relatively low ratios of the plasma internal inductance to the safety factor at 95% of the poloidal flux, which might imply classical stability, in agreement with the decay of the mode when the neoclassical drive is removed.

  9. A Digital Phase Lock Loop for an External Cavity Diode Laser

    Science.gov (United States)

    Wang, Xiao-Long; Tao, Tian-Jiong; Cheng, Bing; Wu, Bin; Xu, Yun-Fei; Wang, Zhao-Ying; Lin, Qiang

    2011-08-01

    A digital optical phase lock loop (OPLL) is implemented to synchronize the frequency and phase between two external cavity diode lasers (ECDL), generating Raman pulses for atom interferometry. The setup involves all-digital phase detection and a programmable digital proportional-integral-derivative (PID) loop in locking. The lock generates a narrow beat-note linewidth below 1 Hz and low phase-noise of 0.03rad2 between the master and slave ECDLs. The lock proves to be stable and robust, and all the locking parameters can be set and optimized on a computer interface with convenience, making the lock adaptable to various setups of laser systems.

  10. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  11. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

    International Nuclear Information System (INIS)

    Li Mi-Feng; Ni Hai-Qiao; Niu Zhi-Chuan; Ding Ying; David Bajek; Liang Kong; Ana Cataluna Maria

    2014-01-01

    The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 °C, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1 × 10 −6 Torr (1 Torr = 1.33322 × 10 2 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ∼ 19.7-GHz repetition rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  13. The effect of transverse multi-mode oscillation in passively modelocked solid-state lasers

    Science.gov (United States)

    Agnesi, A.; Reali, G. C.; Gabetta, G.

    1992-03-01

    We demonstrate that the pulses from a passively mode-locked flashlamp pumped solid-state laser can be considerably shorter using an antiresonant-ring mirror than using a linear cavity with a standard contacted dye-cell mirror, and we suggest that transverse-mode-filtering effects in the antiresonant ring play an important role in explaining this difference.

  14. A Digital Phase Lock Loop for an External Cavity Diode Laser

    International Nuclear Information System (INIS)

    Wang Xiao-Long; Tao Tian-Jiong; Cheng Bing; Wu Bin; Xu Yun-Fei; Wang Zhao-Ying; Lin Qiang

    2011-01-01

    A digital optical phase lock loop (OPLL) is implemented to synchronize the frequency and phase between two external cavity diode lasers (ECDL), generating Raman pulses for atom interferometry. The setup involves all-digital phase detection and a programmable digital proportional-integral-derivative (PID) loop in locking. The lock generates a narrow beat-note linewidth below 1 Hz and low phase-noise of 0.03rad 2 between the master and slave ECDLs. The lock proves to be stable and robust, and all the locking parameters can be set and optimized on a computer interface with convenience, making the lock adaptable to various setups of laser systems. (fundamental areas of phenomenology(including applications))

  15. Automatic Locking of Laser Frequency to an Absorption Peak

    Science.gov (United States)

    Koch, Grady J.

    2006-01-01

    An electronic system adjusts the frequency of a tunable laser, eventually locking the frequency to a peak in the optical absorption spectrum of a gas (or of a Fabry-Perot cavity that has an absorption peak like that of a gas). This system was developed to enable precise locking of the frequency of a laser used in differential absorption LIDAR measurements of trace atmospheric gases. This system also has great commercial potential as a prototype of means for precise control of frequencies of lasers in future dense wavelength-division-multiplexing optical communications systems. The operation of this system is completely automatic: Unlike in the operation of some prior laser-frequency-locking systems, there is ordinarily no need for a human operator to adjust the frequency manually to an initial value close enough to the peak to enable automatic locking to take over. Instead, this system also automatically performs the initial adjustment. The system (see Figure 1) is based on a concept of (1) initially modulating the laser frequency to sweep it through a spectral range that includes the desired absorption peak, (2) determining the derivative of the absorption peak with respect to the laser frequency for use as an error signal, (3) identifying the desired frequency [at the very top (which is also the middle) of the peak] as the frequency where the derivative goes to zero, and (4) thereafter keeping the frequency within a locking range and adjusting the frequency as needed to keep the derivative (the error signal) as close as possible to zero. More specifically, the system utilizes the fact that in addition to a zero crossing at the top of the absorption peak, the error signal also closely approximates a straight line in the vicinity of the zero crossing (see Figure 2). This vicinity is the locking range because the linearity of the error signal in this range makes it useful as a source of feedback for a proportional + integral + derivative control scheme that

  16. Stabilization of self-mode-locked quantum dash lasers by symmetric dual-loop optical feedback

    Science.gov (United States)

    Asghar, Haroon; Wei, Wei; Kumar, Pramod; Sooudi, Ehsan; McInerney, John. G.

    2018-02-01

    We report experimental studies of the influence of symmetric dual-loop optical feedback on the RF linewidth and timing jitter of self-mode-locked two-section quantum dash lasers emitting at 1550 nm. Various feedback schemes were investigated and optimum levels determined for narrowest RF linewidth and low timing jitter, for single-loop and symmetric dual-loop feedback. Two symmetric dual-loop configurations, with balanced and unbalanced feedback ratios, were studied. We demonstrate that unbalanced symmetric dual loop feedback, with the inner cavity resonant and fine delay tuning of the outer loop, gives narrowest RF linewidth and reduced timing jitter over a wide range of delay, unlike single and balanced symmetric dual-loop configurations. This configuration with feedback lengths 80 and 140 m narrows the RF linewidth by 4-67x and 10-100x, respectively, across the widest delay range, compared to free-running. For symmetric dual-loop feedback, the influence of different power split ratios through the feedback loops was determined. Our results show that symmetric dual-loop feedback is markedly more effective than single-loop feedback in reducing RF linewidth and timing jitter, and is much less sensitive to delay phase, making this technique ideal for applications where robustness and alignment tolerance are essential.

  17. High-resolution retinal swept source optical coherence tomography with an ultra-wideband Fourier-domain mode-locked laser at MHz A-scan rates.

    Science.gov (United States)

    Kolb, Jan Philip; Pfeiffer, Tom; Eibl, Matthias; Hakert, Hubertus; Huber, Robert

    2018-01-01

    We present a new 1060 nm Fourier domain mode locked laser (FDML laser) with a record 143 nm sweep bandwidth at 2∙ 417 kHz  =  834 kHz and 120 nm at 1.67 MHz, respectively. We show that not only the bandwidth alone, but also the shape of the spectrum is critical for the resulting axial resolution, because of the specific wavelength-dependent absorption of the vitreous. The theoretical limit of our setup lies at 5.9 µm axial resolution. In vivo MHz-OCT imaging of human retina is performed and the image quality is compared to the previous results acquired with 70 nm sweep range, as well as to existing spectral domain OCT data with 2.1 µm axial resolution from literature. We identify benefits of the higher resolution, for example the improved visualization of small blood vessels in the retina besides several others.

  18. High-order diffraction gratings for high-power semiconductor lasers

    International Nuclear Information System (INIS)

    Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

    2012-01-01

    A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  19. Wideband laser locking to an atomic reference with modulation transfer spectroscopy.

    Science.gov (United States)

    Negnevitsky, V; Turner, L D

    2013-02-11

    We demonstrate that conventional modulated spectroscopy apparatus, used for laser frequency stabilization in many atomic physics laboratories, can be enhanced to provide a wideband lock delivering deep suppression of frequency noise across the acoustic range. Using an acousto-optic modulator driven with an agile oscillator, we show that wideband frequency modulation of the pump laser in modulation transfer spectroscopy produces the unique single lock-point spectrum previously demonstrated with electro-optic phase modulation. We achieve a laser lock with 100 kHz feedback bandwidth, limited by our laser control electronics. This bandwidth is sufficient to reduce frequency noise by 30 dB across the acoustic range and narrows the imputed linewidth by a factor of five.

  20. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

    2014-01-01

    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  1. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le

    2010-01-01

    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  2. Semiconductor laser multi-spectral sensing and imaging.

    Science.gov (United States)

    Le, Han Q; Wang, Yang

    2010-01-01

    Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  3. Plasma-wall interaction and locked modes in the toroidal pinch experiment TPE-RX reversed-field pinch

    International Nuclear Information System (INIS)

    Pasqualini, D.; Martin, P.; Koguchi, H.; Yagi, Y.; Hirano, Y.; Sakakita, H.; Spizzo, G.

    2006-01-01

    The MHD instabilities that sustain the reversed-field pinch (RFP) configuration tend to phase-lock together and also to wall-lock, forming a bulging of the plasma column, called 'locked mode'. This phenomenon is of particular interest, since the locked mode causes a larger plasma resistivity, plasma cooling, and, in some cases, anomalous discharge termination. Up to now, studies of the locked mode have been focused on m=1 modes (being m the poloidal mode number). In this Letter we show that m=0 modes also play a role, based on the cross-check between magnetic spectra and toroidally resolved D α array measurements. (author)

  4. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  5. Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study.

    Science.gov (United States)

    Bardella, Paolo; Columbo, Lorenzo Luigi; Gioannini, Mariangela

    2017-10-16

    Optical Frequency Comb (OFC) generated by semiconductor lasers are currently widely used in the extremely timely field of high capacity optical interconnects and high precision spectroscopy. In the last decade, several experimental evidences of spontaneous OFC generation have been reported in single section Quantum Dot (QD) lasers. Here we provide a physical understanding of these self-organization phenomena by simulating the multi-mode dynamics of a single section Fabry-Perot (FP) QD laser using a Time-Domain Traveling-Wave (TDTW) model that properly accounts for coherent radiation-matter interaction in the semiconductor active medium and includes the carrier grating generated by the optical standing wave pattern in the laser cavity. We show that the latter is the fundamental physical effect at the origin of the multi-mode spectrum appearing just above threshold. A self-mode-locking regime associated with the emission of OFC is achieved for higher bias currents and ascribed to nonlinear phase sensitive effects as Four Wave Mixing (FWM). Our results explain in detail the behaviour observed experimentally by different research groups and in different QD and Quantum Dash (QDash) devices.

  6. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  7. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  8. Theoretical analyses of an injection-locked diode-pumped rubidium vapor laser.

    Science.gov (United States)

    Cai, He; Gao, Chunqing; Liu, Xiaoxu; Wang, Shunyan; Yu, Hang; Rong, Kepeng; An, Guofei; Han, Juhong; Zhang, Wei; Wang, Hongyuan; Wang, You

    2018-04-02

    Diode-pumped alkali lasers (DPALs) have drawn much attention since they were proposed in 2001. The narrow-linewidth DPAL can be potentially applied in the fields of coherent communication, laser radar, and atomic spectroscopy. In this study, we propose a novel protocol to narrow the width of one kind of DPAL, diode-pumped rubidium vapor laser (DPRVL), by use of an injection locking technique. A kinetic model is first set up for an injection-locked DPRVL with the end-pumped configuration. The laser tunable duration is also analyzed for a continuous wave (CW) injection-locked DPRVL system. Then, the influences of the pump power, power of a master laser, and reflectance of an output coupler on the output performance are theoretically analyzed. The study should be useful for design of a narrow-linewidth DPAL with the relatively high output.

  9. Low-frequency fluctuation regime in a multimode semiconductor laser subject to a mode-selective optical feedback

    International Nuclear Information System (INIS)

    Rogister, F.; Sciamanna, M.; Deparis, O.; Megret, P.; Blondel, M.

    2002-01-01

    We study numerically the dynamics of a multimode laser diode subject to a mode-selective optical feedback by using a generalization of the Lang-Kobayashi equations. In this configuration, only one longitudinal mode of the laser is reinjected into the laser cavity; the other modes are free. When the laser operates in the low-frequency fluctuation regime, our model predicts intensity bursts in the free modes simultaneously with dropouts in the selected mode, in good agreement with recent experiments. In the frame of our model, intensity bursts and dropouts are associated with collisions of the system trajectory in phase space with saddle-type antimodes

  10. Comparative study of diode-pumping self-injection and injection-locking Tm:YAG lasers

    International Nuclear Information System (INIS)

    Wu, C T; Chen, F; Ju, Y L; Wang, Y Z

    2013-01-01

    A comparative study of the laser characteristics of self-injection and injection-locking Tm:YAG lasers is given in this paper. At a pump energy of 145 mJ and Q-switched repetition rate of 100 Hz, an output energy of 2.39 mJ was obtained for an injection-locking Tm:YAG laser, with a pulse width of 403.2 ns and a pulse building-up time of 2.12 μs. Under the same conditions, the output energy, pulse width and pulse build-up time for a self-injection Tm:YAG laser were 2.21 mJ, 407.0 ns and 3.95 μs, respectively. The threshold of the Q-switched injection-locking Tm:YAG laser was much lower than that of the self-injection laser, and the pulse width was narrower and the pulse build-up time shorter. Additionally, the output spectrum was much purer for the injection-locking laser. (paper)

  11. Alternative laser system for cesium magneto-optical trap via optical injection locking to sideband of a 9-GHz current-modulated diode laser.

    Science.gov (United States)

    Diao, Wenting; He, Jun; Liu, Zhi; Yang, Baodong; Wang, Junmin

    2012-03-26

    By optical injection of an 852-nm extended-cavity diode laser (master laser) to lock the + 1-order sideband of a ~9-GHz-current-modulated diode laser (slave laser), we generate a pair of phase-locked lasers with a frequency difference up to ~9-GHz for a cesium (Cs) magneto-optical trap (MOT) with convenient tuning capability. For a cesium MOT, the master laser acts as repumping laser, locked to the Cs 6S₁/₂ (F = 3) - 6P₃/₂ (F' = 4) transition. When the + 1-order sideband of the 8.9536-GHz-current-modulated slave laser is optically injection-locked, the carrier operates on the Cs 6S₁/₂ (F = 4) - 6P₃/₂ (F' = 5) cooling cycle transition with -12 MHz detuning and acts as cooling/trapping laser. When carrying a 9.1926-GHz modulation signal, this phase-locked laser system can be applied in the fields of coherent population trapping and coherent manipulation of Cs atomic ground states.

  12. Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

    Science.gov (United States)

    Sun, Q. M.; Melnikov, A.; Mandelis, A.

    2015-06-01

    Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

  13. Watt-level widely tunable single-mode emission by injection-locking of a multimode Fabry-Perot quantum cascade laser

    Science.gov (United States)

    Chevalier, Paul; Piccardo, Marco; Anand, Sajant; Mejia, Enrique A.; Wang, Yongrui; Mansuripur, Tobias S.; Xie, Feng; Lascola, Kevin; Belyanin, Alexey; Capasso, Federico

    2018-02-01

    Free-running Fabry-Perot lasers normally operate in a single-mode regime until the pumping current is increased beyond the single-mode instability threshold, above which they evolve into a multimode state. As a result of this instability, the single-mode operation of these lasers is typically constrained to few percents of their output power range, this being an undesired limitation in spectroscopy applications. In order to expand the span of single-mode operation, we use an optical injection seed generated by an external-cavity single-mode laser source to force the Fabry-Perot quantum cascade laser into a single-mode state in the high current range, where it would otherwise operate in a multimode regime. Utilizing this approach, we achieve single-mode emission at room temperature with a tuning range of 36 cm-1 and stable continuous-wave output power exceeding 1 W at 4.5 μm. Far-field measurements show that a single transverse mode is emitted up to the highest optical power, indicating that the beam properties of the seeded Fabry-Perot laser remain unchanged as compared to free-running operation.

  14. Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

    International Nuclear Information System (INIS)

    Mary, R.; Thomson, R. R.; Kar, A. K.; Brown, G.; Beecher, S. J.; Popa, D.; Sun, Z.; Torrisi, F.; Hasan, T.; Milana, S.; Bonaccorso, F.; Ferrari, A. C.

    2013-01-01

    We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs

  15. Measurement of the nonaxisymmetric heat load distribution on the first wall of TFTR due to locked modes

    International Nuclear Information System (INIS)

    Janos, A.C.; Fredrickson, E.; McGuire, K.M.; Nagayama, Y.; Owens, D.K.

    1992-01-01

    The first wall of TFTR is covered in large part (23%) by an inner-wall bumper limiter which is the primary power handling structure in TFTR. The limiter is comprised of more than 2000 tiles, and is instrumented with a large number (>100) of thermocouples in a two-dimensional (2D) array, primarily for protection of the wall. While only about 5% of the tiles are monitored, this thermocouple system is nevertheless capable of mapping details in the nonaxisymmetric, as well as symmetric, heat load patterns encountered under different conditions. In particular, helical heating patterns are observed in discharges which have locked modes. The helical patterns clearly match the expected trajectories based on the m/n mode numbers obtained from Mirnov coils (m/n=2/1 and 4/1), so that the thermocouple system can and was used to identify the existence and mode number of a locked mode. While TFTR discharges rarely suffer from locked modes, locked modes always alter the heating pattern. The locked modes are found to very significantly redistribute the heat load for both ohmic and NBI heated discharges. Locked modes can make what were the coldest areas into the hottest areas, and vice versa. Locked modes also can alter the heat pattern resulting from the frequent disruptions which occur as a result of a locked mode

  16. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  17. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  18. Investigation on Locking and Pulling Modes in Analog Frequency Dividers

    Directory of Open Access Journals (Sweden)

    Antonio Buonomo

    2013-01-01

    Full Text Available We compare the main analytical results available to estimate the locking range, which is the key figure-of-merit of LC frequency dividers based on the injection locking phenomenon. Starting from the classical result by Adler concerning injection-locked oscillators, we elucidate the merits and the shortcomings of the different approaches to study injection-locked frequency dividers, with particular emphasis on divider-by-2. In particular, we show the potential of a perturbation approach which enables a more complete analysis of frequency dividers, making it possible to calculate not only the amplitude and the phase of the locked oscillation, but also the region where it exists and is stable, which defines the locking region. Finally, we analyze the dynamical behaviour of the dividers in the vicinity of the boundary of the locking region, showing that there exists a border region where the occurrence of the locking or the pulling operation mode is possible, depending on the initial conditions of the system.

  19. Kerr-Lens Mode-Locked Femtosecond Yb:GdYSiO5 Laser Directly Pumped by a Laser Diode

    Directory of Open Access Journals (Sweden)

    Jiangfeng Zhu

    2015-10-01

    Full Text Available We demonstrate the first Kerr-lens mode-locked operation in a diode-pumped Yb:GdYSiO5 oscillator. Under a diode pump power of 5 W, 141 fs pulses with an average power of 237 mW were obtained at a repetition rate of 118 MHz. The central wavelength was at 1094 nm with a bandwidth of 10.1 nm. Shorter pulses were obtained by adjusting the cavity to operate at a shorter wavelength, resulting in 55 fs pulse duration at the central wavelength of 1054 nm with a bandwidth of 23.5 nm.

  20. Absolute spectroscopy near 7.8 {\\mu} m with a comb-locked extended-cavity quantum-cascade-laser

    KAUST Repository

    Lamperti, Marco

    2017-07-31

    We report the first experimental demonstration of frequency-locking of an extended-cavity quantum-cascade-laser (EC-QCL) to a near-infrared frequency comb. The locking scheme is applied to carry out absolute spectroscopy of N2O lines near 7.87 {\\\\mu}m with an accuracy of ~60 kHz. Thanks to a single mode operation over more than 100 cm^{-1}, the comb-locked EC-QCL shows great potential for the accurate retrieval of line center frequencies in a spectral region that is currently outside the reach of broadly tunable cw sources, either based on difference frequency generation or optical parametric oscillation. The approach described here can be straightforwardly extended up to 12 {\\\\mu}m, which is the current wavelength limit for commercial cw EC-QCLs.

  1. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.

    2003-01-01

    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  2. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  3. Comprehensive and fully self-consistent modeling of modern semiconductor lasers

    International Nuclear Information System (INIS)

    Nakwaski, W.; Sarzał, R. P.

    2016-01-01

    The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

  4. Studies on Ytterbium-doped Fibre Laser Operating in Different Regimes

    International Nuclear Information System (INIS)

    Gan, Y; Xiang, W H; Zhang, G Z

    2006-01-01

    An ytterbium-doped fibre laser with a unidirectional ring cavity containing a polarizer placed between two in-line polarization controllers is presented. Depending on an equivalent saturable absorber, this laser operates in continuous, Q-switched mode-locked or CW mode-locked regimes. The passive method described here allowed us to choose the operating regime of the fibre laser by rotating the two polarization controllers and adjusting the pump power. Results of numerical simulations of pulse propagation in such a mode-locked fibre ring laser are presented, which reveals that the Q-switched mode-locked or CW modelocked regimes can be achieved by aligning the polarizer near the slow or the fast axes of the fibre

  5. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  6. Theoretical investigation of injection-locked high modulation bandwidth quantum cascade lasers.

    Science.gov (United States)

    Meng, Bo; Wang, Qi Jie

    2012-01-16

    In this study, we report for the first time to our knowledge theoretical investigation of modulation responses of injection-locked mid-infrared quantum cascade lasers (QCLs) at wavelengths of 4.6 μm and 9 μm, respectively. It is shown through a three-level rate equations model that the direct intensity modulation of QCLs gives the maximum modulation bandwidths of ~7 GHz at 4.6 μm and ~20 GHz at 9 μm. By applying the injection locking scheme, we find that the modulation bandwidths of up to ~30 GHz and ~70 GHz can be achieved for QCLs at 4.6 μm and 9 μm, respectively, with an injection ratio of 5 dB. The result also shows that an ultrawide modulation bandwidth of more than 200 GHz is possible with a 10 dB injection ratio for QCLs at 9 μm. An important characteristic of injection-locked QCLs is the nonexistence of unstable locking region in the locking map, in contrast to their diode laser counterparts. We attribute this to the ultra-short upper laser state lifetimes of QCLs.

  7. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  8. Transfer of an exfoliated monolayer graphene flake onto an optical fiber end face for erbium-doped fiber laser mode-locking

    International Nuclear Information System (INIS)

    Rosa, Henrique Guimaraes; De Souza, Eunézio A Thoroh; Gomes, José Carlos Viana

    2015-01-01

    This paper presents, for the first time, the successful transfer of exfoliated monolayer graphene flake to the optical fiber end face and alignment to its core. By fabricating and optimizing a polymeric poly(methyl methacrylate) (PMMA) and polyvinyl alcohol (PVA) substrate, it is possible to obtain a contrast of up to 11% for green light illumination, allowing the identification of monolayer graphene flakes that were transferred to optical fiber samples and aligned to its core. With Raman spectroscopy, it is demonstrated that graphene flake completely covers the optical fiber core, and its quality remains unaltered after the transfer. The generation of mode-locked erbium-doped fiber laser pulses, with a duration of 672 fs, with a single-monolayer graphene flake as a saturable absorber, is demonstrated for the first time. This transfer technique is of general applicability and can be used for other two-dimensional (2D) exfoliated materials. (letter)

  9. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

    1999-01-01

    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

  10. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

    2002-01-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  11. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

    2002-02-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  12. Generation of nanosecond laser pulses at a 2.2-MHz repetition rate by a cw diode-pumped passively Q-switched Nd3+:YVO4 laser

    International Nuclear Information System (INIS)

    Nghia, Nguyen T; Hao, Nguyen V; Orlovich, Valentin A; Hung, Nguyen D

    2011-01-01

    We report a new configuration of a high-repetition rate nanosecond laser based on a semiconductor saturable absorber mirror (SESAM). The SESAM is conventional technical solution for passive mode-locking at 1064 nm and simultaneously used as a highly reflecting mirror and a saturable absorber in a high-Q and short cavity of a cw diode-end-pumped a-cut Nd 3+ :YVO 4 laser. Two laser beams are coupled out from the cavity using an intracavity low-reflection thin splitter. The laser characteristics are investigated as functions of pump and resonator parameters. Using a 1.8-W cw pump laser diode at 808 nm, the passively Q-switched SESAMbased laser generates 22-ns pulses with an average power of 275 mW at a pulse repetition rate of 2250 kHz.

  13. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    International Nuclear Information System (INIS)

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  14. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  15. Toroidally asymmetric particle transport caused by phase-locking of MHD modes in RFX-mod

    International Nuclear Information System (INIS)

    Lorenzini, R.; Terranova, D.; Auriemma, F.; Cavazzana, R.; Innocente, P.; Martini, S.; Serianni, G.; Zuin, M.

    2007-01-01

    The particle and energy transport in reversed field pinch experiments is affected by the locking in phase of the tearing modes, also dubbed dynamo modes, that sustain the magnetic configuration. In standard RFP pulses many m = 1 and m = 0 resonant modes have a relatively large amplitude (a spectrum dubbed MH for multiple helicity). The locking in phase of m = 1 tearing modes produces a helical deformation (locked mode (LM)) of the magnetic surfaces in a region of approximately 40 toroidal degrees. The region of the LM is characterized by a strong plasma-wall interaction and by high losses of energy and particles that account for a significant fraction of the input power and of the total particle outflux. The locking in phase of m = 0 modes modifies the plasma radius, shrinking and enlarging the plasma cross section in two wide toroidal regions of about 100 0 . The purpose of this paper is to investigate to what extent the locking in phase of m = 0 modes introduces toroidal asymmetries in the transport properties of the plasma. This study has been carried out investigating the shape of the density profile in the RFX-mod experiment. The analyses show that the profile exhibits a dependence on the toroidal angle, which is related to the deformation of the plasma column due to the locking in phase of m = 0 modes: the least steep density gradients at the edge are found in the region where the plasma column is shrunk, entailing that in this region the particle transport is enhanced. An analogous asymmetry also characterizes the density and magnetic fluctuations at the edge, which are enhanced in the same toroidal region where the particle transport also is enhanced. This result can be considered the first experimental evidence of an instability localized where the plasma column is shrunk

  16. Amplitude Noise Suppression and Orthogonal Multiplexing Using Injection-Locked Single-Mode VCSEL

    DEFF Research Database (Denmark)

    Lyubopytov, Vladimir; von Lerber, Tuomo; Lassas, Matti

    2017-01-01

    We experimentally demonstrate BER reduction and orthogonal modulation using an injection locked single-mode VCSEL. It allows us suppressing an amplitude noise of optical signal and/or double the capacity of an information channel.......We experimentally demonstrate BER reduction and orthogonal modulation using an injection locked single-mode VCSEL. It allows us suppressing an amplitude noise of optical signal and/or double the capacity of an information channel....

  17. Compact silicon photonics-based multi laser module for sensing

    Science.gov (United States)

    Ayotte, S.; Costin, F.; Babin, A.; Paré-Olivier, G.; Morin, M.; Filion, B.; Bédard, K.; Chrétien, P.; Bilodeau, G.; Girard-Deschênes, E.; Perron, L.-P.; Davidson, C.-A.; D'Amato, D.; Laplante, M.; Blanchet-Létourneau, J.

    2018-02-01

    A compact three-laser source for optical sensing is presented. It is based on a low-noise implementation of the Pound Drever-Hall method and comprises high-bandwidth optical phase-locked loops. The outputs from three semiconductor distributed feedback lasers, mounted on thermo-electric coolers (TEC), are coupled with micro-lenses into a silicon photonics (SiP) chip that performs beat note detection and several other functions. The chip comprises phase modulators, variable optical attenuators, multi-mode-interference couplers, variable ratio tap couplers, integrated photodiodes and optical fiber butt-couplers. Electrical connections between a metallized ceramic and the TECs, lasers and SiP chip are achieved by wirebonds. All these components stand within a 35 mm by 35 mm package which is interfaced with 90 electrical pins and two fiber pigtails. One pigtail carries the signals from a master and slave lasers, while another carries that from a second slave laser. The pins are soldered to a printed circuit board featuring a micro-processor that controls and monitors the system to ensure stable operation over fluctuating environmental conditions. This highly adaptable multi-laser source can address various sensing applications requiring the tracking of up to three narrow spectral features with a high bandwidth. It is used to sense a fiber-based ring resonator emulating a resonant fiber optics gyroscope. The master laser is locked to the resonator with a loop bandwidth greater than 1 MHz. The slave lasers are offset frequency locked to the master laser with loop bandwidths greater than 100 MHz. This high performance source is compact, automated, robust, and remains locked for days.

  18. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  19. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  20. Electrically Pumped Vertical-Cavity Amplifiers

    DEFF Research Database (Denmark)

    Greibe, Tine

    2007-01-01

    In this work, the design of electrically pumped vertical cavity semiconductor optical amplifiers (eVCAs) for use in a mode-locked external-cavity laser has been developed, investigated and analysed. Four different eVCAs, one top-emitting and three bottom emitting structures, have been designed...... and discussed. The thesis concludes with recommendations for further work towards the realisation of compact electrically pumped mode-locked vertical externalcavity surface emitting lasers....

  1. Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

    International Nuclear Information System (INIS)

    Kim, Won-Jun; Debnath, Pulak C; Song, Yong-Won; Lee, Junsu; Lee, Ju Han; Lim, Dae-Soon

    2013-01-01

    Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz. (paper)

  2. Hybrid organic semiconductor lasers for bio-molecular sensing.

    Science.gov (United States)

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  3. Frequency and Phase-lock Control of a 3 THz Quantum Cascade Laser

    Science.gov (United States)

    Betz, A. L.; Boreiko, R. T.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.

    2005-01-01

    We have locked the frequency of a 3 THz quantum cascade laser (QCL) to that of a far-infrared gas laser with a tunable microwave offset frequency. The locked QCL line shape is essentially Gaussian, with linewidths of 65 and 141 kHz at the -3 and -10 dB levels, respectively. The lock condition can be maintained indefinitely, without requiring temperature or bias current regulation of the QCL other than that provided by the lock error signal. The result demonstrates that a terahertz QCL can be frequency controlled with l-part-in-lO(exp 8) accuracy, which is a factor of 100 better than that needed for a local oscillator in a heterodyne receiver for atmospheric and astronomic spectroscopy.

  4. An innovative interpretation of rotating tearing mode locking to an external static current

    International Nuclear Information System (INIS)

    Coelho, R.; Lazzaro, E.

    2001-01-01

    Naturally occurring error fields in tokamaks, which arise from misalignments of the external field coils, may trigger the onset of tearing modes. The conditions under which a static error field is able to lock a rotating tearing mode and how this process takes place are discussed. The analysis presented contributes to a new understanding and interpretation of mode locking, given in terms of the superposition of a slipping layer (a radial layer of very fast mode phase variations) and the tearing layer, where reconnection takes place. In addition, a stabilizing operating window is found to exist, independent of the phase time evolution of the mode. (author). Letter-to-the-editor

  5. Majorana zero modes in superconductor-semiconductor heterostructures

    Science.gov (United States)

    Lutchyn, R. M.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Krogstrup, P.; Marcus, C. M.; Oreg, Y.

    2018-05-01

    Realizing topological superconductivity and Majorana zero modes in the laboratory is a major goal in condensed-matter physics. In this Review, we survey the current status of this rapidly developing field, focusing on proposals for the realization of topological superconductivity in semiconductor-superconductor heterostructures. We examine materials science progress in growing InAs and InSb semiconductor nanowires and characterizing these systems. We then discuss the observation of robust signatures of Majorana zero modes in recent experiments, paying particular attention to zero-bias tunnelling conduction measurements and Coulomb blockade experiments. We also outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation.

  6. Laser frequency locking based on the normal and abnormal saturated absorption spectroscopy of 87Rb

    International Nuclear Information System (INIS)

    Wan Jian-Hong; Liu Chang; Wang Yan-Hui

    2016-01-01

    We present a practical method to avoid the mis-locking phenomenon in the saturated-absorption-spectrum laser-frequency-locking system and set up a simple theoretical model to explain the abnormal saturated absorption spectrum. The method uses the normal and abnormal saturated absorption spectra of the same transition 5 2 S 1/2 , F = 2–5 2 P 3/2 , F′ = 3 saturated absorption of the 87 Rb D 2 resonance line. After subtracting these two signals with the help of electronics, we can obtain a spectrum with a single peak to lock the laser. In our experiment, we use the normal and inverse signals of the transitions 5 2 S 1/2 , F = 2–5 2 P 3/2 , F′ = 3 saturated absorption of the 87 Rb D 2 resonance line to lock a 780-nm distributed feedback (DFB) diode laser. This method improves the long-term locking performance and is suitable for other kinds of diode lasers. (paper)

  7. Optical and mode-locking properties of InGaN/GaN based hetero-structures

    International Nuclear Information System (INIS)

    Irshad, A.

    2011-01-01

    Short wavelength pulsed lasers are indispensable for high density and high speed optical data acquisition, storage and transfer applications. Passively mode-locked blue lasers are an attractive alternative for blue laser sources achieved by non-linear frequency conversion techniques. Although over the recent years it has been shown that InGaN/GaN based hetero-structures can be used as potential material for the fabrication of saturable absorbers, passive mode-locking in the blue spectral range has not been realized yet. The main reason for that is the complicated microscopic nature of InGaN/GaN materials and the difficulty to control the dynamics of photo-induced carriers which determine mode-locking properties of the material. In this work, we have characterized different InGaN based hetero-structures as potential saturable absorbers. Three different groups of the samples have been investigated: i) quantum well samples with different numbers of quantum wells grown under optimal conditions; ii)quantum well samples with modified optical properties due to different buffer layer thickness and postgrowth treatment; iii) a multilayered quantum dot sample. The characterized quantum well samples exhibit relatively high optical quality and sufficiently high saturable losses (which can be controlled by alternating a number of the quantum wells). Nevertheless, they have two major disadvantages as saturable absorbers, namely, a very long absorption recovery time (in the order of a few nanoseconds) and a rather high saturation fluence. The long recovery times are not desirable for achieving a stable and self-starting mode-locking without Q-switching. In order to understand the relaxation processes of photo-induced carriers that determine the absorption recovery times of the saturable absorbers, optical properties of the hetero-structures have been extensively studied by using the frequency and time resolved photo-luminescence technique. The obtained data reveal that, directly

  8. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  9. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  10. Quasiperiodicity, mode-locking, and universal scaling in Rayleigh-Benard convection

    International Nuclear Information System (INIS)

    Ecke, R.E.

    1990-01-01

    This major review paper describes research on a model nonlinear dynamical system of small-aspect-ratio Rayleigh-Benard convection in 3 He - 4 He mixtures. The nonlinear effects of mode locking and quasiperiodic behavior are described. Analysis techniques for characterizing the state of the dynamical system include Fourier transforms, Poincare sections, phase differences, transients, multifractal f(∝) spectra and scaling function dynamics. Theoretical results such as the fractal staircase of mode-locked intervals and the Arnold tongues are reproduced in experimental data. New techniques for analyzing scaling dynamics are developed and discussed. This is a tutorial article that introduces the major important concepts in nonlinear dynamics and focuses on experimental problems and techniques. 77 refs

  11. Simple locking of infrared and ultraviolet diode lasers to a visible laser using a LabVIEW proportional-integral-derivative controller on a Fabry-Perot signal.

    Science.gov (United States)

    Kwolek, J M; Wells, J E; Goodman, D S; Smith, W W

    2016-05-01

    Simultaneous laser locking of infrared (IR) and ultraviolet lasers to a visible stabilized reference laser is demonstrated via a Fabry-Perot (FP) cavity. LabVIEW is used to analyze the input, and an internal proportional-integral-derivative algorithm converts the FP signal to an analog locking feedback signal. The locking program stabilized both lasers to a long term stability of better than 9 MHz, with a custom-built IR laser undergoing significant improvement in frequency stabilization. The results of this study demonstrate the viability of a simple, computer-controlled, non-temperature-stabilized FP locking scheme for our applications, laser cooling of Ca(+) ions, and its use in other applications with similar modest frequency stabilization requirements.

  12. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

    2000-07-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  13. Over 19 W Single-Mode 1545 nm Er,Yb Codoped All-Fiber Laser

    Directory of Open Access Journals (Sweden)

    Jiadong Wu

    2017-01-01

    Full Text Available We report a high-power cladding-pumped Er,Yb codoped all-fiber laser with truly single transverse mode output. The fiber laser is designed to operate at 1545 nm by the use of a pair of fiber Bragg gratings (FBGs to lock and narrow the output spectrum, which can be very useful in generating the eye-safe ~1650 nm laser emission through the Stimulated Raman Scattering (SRS in silica fibers that is of interest in many applications. Two pieces of standard single-mode fibers are inserted into the laser cavity and output port to guarantee the truly single-mode output as well as good compatibility with other standard fiber components. We have obtained a maximum output power of 19.2 W at 1544.68 nm with a FWHM spectral width of 0.08 nm, corresponding to an average overall slope efficiency of 31.9% with respect to the launched pump power. This is, to the best of our knowledge, the highest output power reported from simple all-fiber single-mode Er,Yb codoped laser oscillator architecture.

  14. Effect of beam expansion loss in a carbon nanotube-doped PVA film on passively mode-locked erbium-doped fiber lasers with different feedback ratios

    International Nuclear Information System (INIS)

    Cheng, Kuang-Nan; Chi, Yu-Chieh; Cheng, Chih-Hsien; Lin, Yung-Hsiang; Lo, Jui-Yung; Lin, Gong-Ru

    2014-01-01

    The effect of beam expansion induced divergent loss in a single-wall carbon nanotube (SWCNT) doped polyvinyl alcohol (PVA) based ultrafast saturable absorber (SA) film thickness on the passive mode-locking (PML) performances of erbium-doped fiber lasers are demonstrated. The variation on the PML pulsewidth of the EDFL is discussed by changing the SWCNT-PVA SA film thicknesses, together with adjusting the pumping power and the intra-cavity feedback ratio. An almost 6 dB increment of divergent loss when enlarging the SWCNT-PVA based SA film thickness from 30–130 µm is observed. When shrinking the SA thickness to 30 µm at the largest pumping power of 52.5 mW, the optical spectrum red-shifts to 1558.8 nm with its 3 dB spectral linewidth broadening up to 2.7 nm, while the pulse has already entered the soliton regime with multi-order Kelly sidebands aside the spectral shoulder. The soliton pulsewidth is as short as 790 fs, which is much shorter than those obtained with other thicker SWCNT doped PVA polymer film based SAs; therefore, the peak power from the output of the PML-EDFL is significantly enlarged accompanied by a completely suppressed residual continuous-wave level to achieve the largest on/off extinction ratio. The main mechanism of pulse shortening with reducing thickness of SWCNT doped PVA polymer film based SA is attributed to the limited beam expansion as well as the enlarged modulation depth, which results in shortened soliton pulsewidth with a clean dc background, and broadened spectrum with enriched Kelly sidebands. The increase of total SWCNT amount in the thicker SA inevitably causes a higher linear absorption; hence, the mode-locking threshold also rises accordingly. By enlarging pumping power from 38.5–52.5 mW, the highest ascent on pulse extinction of up to 32 dB is observed among all kinds of feedback conditions. Nevertheless, the enlargement on the extinction slightly decays with increasing the feedback ratio from 30–90

  15. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  16. Second harmonic generation of frequency-locked pulsed dye laser for selective photoionization of T1-203 isotope

    International Nuclear Information System (INIS)

    Lim, Gwon; Jeong, Do Young; Ko, Kwang Hoon; Kim, Jae Woo; Kim, Taek Soo; Rho, Sipyo; Kim, Cheol Jung

    2003-01-01

    We have constructed the frequency-locked pulsed dye laser system. It is composed with a GIM-type oscillator and 3 stage longitudinally pumped amplifiers. The pump laser is the second harmonic of pulse Nd:YAG laser at the repetition rate of 6 kHz. Frequency-locking of dye laser oscillator is actively controlled by the feedback loop between a photoionization signal of T1-203 isotope and a wavelength tuning control. The tuning mirror rotates the order of micro degree per a step of step motor. Feedback system for frequency locking is operated with a PC-based control interface, including the data analysis of photoionization signals and the wavelength control using step pumping method for a medical application. Therefor, the dye laser has to be locked at 583.66 nm for SHG or BBO crystal. With the frequency-locking system, the photoionization experiment has been done for more than 10 hours.

  17. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey

    2017-01-01

    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  18. Automated Identification of MHD Mode Bifurcation and Locking in Tokamaks

    Science.gov (United States)

    Riquezes, J. D.; Sabbagh, S. A.; Park, Y. S.; Bell, R. E.; Morton, L. A.

    2017-10-01

    Disruption avoidance is critical in reactor-scale tokamaks such as ITER to maintain steady plasma operation and avoid damage to device components. A key physical event chain that leads to disruptions is the appearance of rotating MHD modes, their slowing by resonant field drag mechanisms, and their locking. An algorithm has been developed that automatically detects bifurcation of the mode toroidal rotation frequency due to loss of torque balance under resonant braking, and mode locking for a set of shots using spectral decomposition. The present research examines data from NSTX, NSTX-U and KSTAR plasmas which differ significantly in aspect ratio (ranging from A = 1.3 - 3.5). The research aims to examine and compare the effectiveness of different algorithms for toroidal mode number discrimination, such as phase matching and singular value decomposition approaches, and to examine potential differences related to machine aspect ratio (e.g. mode eigenfunction shape variation). Simple theoretical models will be compared to the dynamics found. Main goals are to detect or potentially forecast the event chain early during a discharge. This would serve as a cue to engage active mode control or a controlled plasma shutdown. Supported by US DOE Contracts DE-SC0016614 and DE-AC02-09CH11466.

  19. Transient thermal analysis of semiconductor diode lasers under pulsed operation

    Science.gov (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.

    2017-02-01

    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  20. Double resonance modulation characteristics of optically injection-locked Fabry–Perot lasers

    International Nuclear Information System (INIS)

    Dorogush, E S; Afonenko, A A

    2015-01-01

    The distributed resonator model is used to show the presence of several resonance responses on the modulation characteristic of optically injection-locked Fabry–Perot lasers. The positions of the resonance peaks on the modulation characteristic are determined by the resonator length and frequency detuning of optical injection. It is shown that an appropriate choice of the resonator length and injection locking conditions allows one to obtain efficient modulation in two ranges near 40 – 60 GHz or to increase the direct modulation bandwidth up to 50 GHz. (control of laser radiation parameters)