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Sample records for mobile bay al

  1. 77 FR 23119 - Annual Marine Events in the Eighth Coast Guard District, Dauphin Island Race; Mobile Bay; Mobile, AL

    Science.gov (United States)

    2012-04-18

    ... Marine Events in the Eighth Coast Guard District, Dauphin Island Race; Mobile Bay; Mobile, AL AGENCY... Special Local Regulations for the Dauphin Island Race in the Mobile Bay, Mobile, AL from 9 a.m. until 5 p... Captain of the Port (COTP) Mobile or the designated Coast Guard Patrol Commander. DATES: The regulations...

  2. Use of Geographic Information Systems to examine cumulative impacts of development on Mobile Bay, AL and Galveston Bay, TX

    International Nuclear Information System (INIS)

    Rosigno, P.F.; McNiff, M.E.; Watzin, M.C.; Ji, W.

    1993-01-01

    Databases from Mobile Bay, Alabama and Galveston Bay, Texas were compiled using ARC/INFO Geographic Information Systems (GIS) to examine the cumulative impacts from urbanization and industrialization on these two Gulf of Mexico estuaries. The databases included information on wetland habitats, pollution sources, metal contamination, bird-nesting sites, and oyster reefs, among others. A series of maps were used to represent the impacts within and between each ecosystem. These two estuaries share many similarities in the types of developmental pressures that each experience. However, difference in the magnitude of industrial activity, pollution loading, and urban growth coupled with distinct hydrodynamic and geochemical differences in sediment mineralogy, freshwater inflows and salinity regimens results in differing responses. With growing human population and extensive oil and gas development, the demands on Galveston Bay are quite different than those placed on Mobile Bay which has lower growth and less extensive oil and gas infrastructure. Mobile Bay tends to retain whatever contamination enters into the system because of the high levels of clay and organic carbon found in its sediment. Some of these chemicals bioaccumulate, posing an extra risk to natural resources. Geographic Information Systems provide natural resource managers with the technology to manage complex databases. The analytical and mapping capabilities of GIS can be used to consider cumulative effects in a regional context and to develop plans to protect ecologically sensitive areas

  3. Mobile Bay turbidity study

    Science.gov (United States)

    Crozier, G. F.; Schroeder, W. W.

    1978-01-01

    The termination of studies carried on for almost three years in the Mobile Bay area and adjacent continental shelf are reported. The initial results concentrating on the shelf and lower bay were presented in the interim report. The continued scope of work was designed to attempt a refinement of the mathematical model, assess the effectiveness of optical measurement of suspended particulate material and disseminate the acquired information. The optical characteristics of particulate solutions are affected by density gradients within the medium, density of the suspended particles, particle size, particle shape, particle quality, albedo, and the angle of refracted light. Several of these are discussed in detail.

  4. Meteorological, biological, and hydrographic data collected from Middle Bay Lighthouse in Mobile Bay, AL from 05/23/2005 - 12/31/2013 (NODC Accession 0117376)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Abstract: Dauphin Island Sea Lab and the Mobile Bay National Estuary Program have partnered with the University of South Alabama, the Alabama Department of...

  5. 2010 U.S. Geological Survey (USGS) Topographic LiDAR: Mobile Bay, AL

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — USGS Contract: G10PC00026 Task Order Number: G10PD00578 LiDAR was collected at a nominal pulse spacing of 2.0 meters for a 700 square mile area to the east of Mobile...

  6. Using Remotely Sensed Data and Hydrologic Models to Evaluate the Effects of Climate Change on Shallow Aquatic Ecosystems in the Mobile Bay, AL Estuary

    Science.gov (United States)

    Estes, M. G.; Al-Hamdan, M. Z.; Thom, R.; Judd, C.; Ellis, J.; Woodruff, D.; Quattrochi, D.; Rose, K.; Swann, R.

    2012-12-01

    Coastal systems in the northern Gulf of Mexico, including the Mobile Bay, AL estuary, are subject to increasing pressure from a variety of activities including climate change. Climate changes have a direct effect on the discharge of rivers that drain into Mobile Bay and adjacent coastal water bodies. The outflows change water quality (temperature, salinity, and sediment concentrations) in the shallow aquatic areas and affect ecosystem functioning. Mobile Bay is a vital ecosystem that provides habitat for many species of fauna and flora. Historically, submerged aquatic vegetation (SAV) and seagrasses were found in this area of the northern Gulf of Mexico; however the extent of vegetation has significantly decreased over the last 60 years. The objectives of this research are to determine: how climate changes affect runoff and water quality in the estuary and how these changes will affect habitat suitability for SAV and seagrasses. Our approach is to use watershed and hydrodynamic modeling to evaluate the impact of climate change on shallow water aquatic ecosystems in Mobile Bay and adjacent coastal areas. Remotely sensed Landsat data were used for current land cover land use (LCLU) model input and the data provided by Intergovernmental Panel on Climate Change (IPCC) of the future changes in temperature, precipitation, and sea level rise were used to create the climate scenarios for the 2025 and 2050 model simulations. Project results are being shared with Gulf coast stakeholders through the Gulf of Mexico Data Atlas to benefit coastal policy and climate change adaptation strategies.

  7. Using Remotely Sensed Data and Hydrologic Models to Evaluate the Effects of Climate Change on Shallow Aquatic Ecosystems in the Mobile Bay, AL Estuary

    Science.gov (United States)

    Estes, M. G.; Al-Hamdan, M. Z.; Thom, R.; Judd, C.; Woodruff, D.; Ellis, J. T.; Quattrochi, D.; Swann, R.

    2012-01-01

    Coastal systems in the northern Gulf of Mexico, including the Mobile Bay, AL estuary, are subject to increasing pressure from a variety of activities including climate change. Climate changes have a direct effect on the discharge of rivers that drain into Mobile Bay and adjacent coastal water bodies. The outflows change water quality (temperature, salinity, and sediment concentrations) in the shallow aquatic areas and affect ecosystem functioning. Mobile Bay is a vital ecosystem that provides habitat for many species of fauna and flora. Historically, submerged aquatic vegetation (SAV) and seagrasses were found in this area of the northern Gulf of Mexico; however the extent of vegetation has significantly decreased over the last 60 years. The objectives of this research are to determine: how climate changes affect runoff and water quality in the estuary and how these changes will affect habitat suitability for SAV and seagrasses. Our approach is to use watershed and hydrodynamic modeling to evaluate the impact of climate change on shallow water aquatic ecosystems in Mobile Bay and adjacent coastal areas. Remotely sensed Landsat data were used for current land cover land use (LCLU) model input and the data provided by Intergovernmental Panel on Climate Change (IPCC) of the future changes in temperature, precipitation, and sea level rise were used to create the climate scenarios for the 2025 and 2050 model simulations. Project results are being shared with Gulf coast stakeholders through the Gulf of Mexico Data Atlas to benefit coastal policy and climate change adaptation strategies.

  8. Mobile Bay turbidity plume study

    Science.gov (United States)

    Crozier, G. F.

    1976-01-01

    Laboratory and field transmissometer studies on the effect of suspended particulate material upon the appearance of water are reported. Quantitative correlations were developed between remotely sensed image density, optical sea truth data, and actual sediment load. Evaluation of satellite image sea truth data for an offshore plume projects contours of transmissivity for two different tidal phases. Data clearly demonstrate the speed of change and movement of the optical plume for water patterns associated with the mouth of Mobile bay in which relatively clear Gulf of Mexico water enters the bay on the eastern side. Data show that wind stress in excess of 15 knots has a marked impact in producing suspended sediment loads.

  9. Over 100 years of environmental change recorded by foraminifers and sediments in a large Gulf of Mexico estuary, Mobile Bay, AL, USA

    Science.gov (United States)

    Osterman, Lisa E.; Smith, Christopher G.

    2012-01-01

    The marine microfauna of Mobile Bay has been profoundly influenced by the development and expansion of the primary shipping channel over the last ˜100 years. Foraminifers and sediments from seven box cores with excess lead-210 chronology document that channel dredging and spoil disposal have altered circulation, reduced estuarine mixing, changed sedimentation patterns, and caused a faunal turnover within the bay. Beginning in the late 1800s, changes in estuarine mixing allowed for greater low-pH freshwater influence in the bay, and ultimately began environmental changes that resulted in the loss of calcareous foraminifers. By the early 1900s, box cores throughout Mobile Bay record a ˜ 100-year trend of increasing calcareous test dissolution that continues to the present. Since the completion of the current shipping channel in the 1950s, restricted tidal flushing and increased terrestrial organic matter, documented by carbon-to-nitrogen ratios, stimulated an increase in agglutinated foraminiferal densities. However, in deeper areas of the bay, hypoxic water has negatively impacted the marine microfauna. Comparisons of the present-day foraminiferal assemblage with foraminifers collected in the early 1970s indicate that the continued biologic loss of calcareous foraminifers in the bay has allowed the introduction of a new agglutinated foraminiferal species into the bay.

  10. Using Remotely Sensed Data and Watershed and Hydrodynamic Models to Evaluate the Effects of Land Cover Land Use Change on Aquatic Ecosystems in Mobile Bay, AL

    Science.gov (United States)

    Al-Hamdan, Mohammad Z.; Estes, Maurice G., Jr.; Judd, Chaeli; Thom, Ron; Woodruff, Dana; Ellis, Jean T.; Quattrochi, Dale; Watson, Brian; Rodriquez, Hugo; Johnson, Hoyt

    2012-01-01

    Alabama coastal systems have been subjected to increasing pressure from a variety of activities including urban and rural development, shoreline modifications, industrial activities, and dredging of shipping and navigation channels. The impacts on coastal ecosystems are often observed through the use of indicator species. One such indicator species for aquatic ecosystem health is submerged aquatic vegetation (SAV). Watershed and hydrodynamic modeling has been performed to evaluate the impact of land cover land use (LCLU) change in the two counties surrounding Mobile Bay (Mobile and Baldwin) on SAV stressors and controlling factors (temperature, salinity, and sediment) in the Mobile Bay estuary. Watershed modeling using the Loading Simulation Package in C++ (LSPC) was performed for all watersheds contiguous to Mobile Bay for LCLU scenarios in 1948, 1992, 2001, and 2030. Remotely sensed Landsat-derived National Land Cover Data (NLCD) were used in the 1992 and 2001 simulations after having been reclassified to a common classification scheme. The Prescott Spatial Growth Model was used to project the 2030 LCLU scenario based on current trends. The LSPC model simulations provided output on changes in flow, temperature, and sediment for 22 discharge points into the estuary. These results were inputted in the Environmental Fluid Dynamics Computer Code (EFDC) hydrodynamic model to generate data on changes in temperature, salinity, and sediment on a grid throughout Mobile Bay and adjacent estuaries. The changes in the aquatic ecosystem were used to perform an ecological analysis to evaluate the impact on SAV habitat suitability. This is the key product benefiting the Mobile Bay coastal environmental managers that integrates the influences of temperature, salinity, and sediment due to LCLU driven flow changes with the restoration potential of SAVs. Data products and results are being integrated into NOAA s EcoWatch and Gulf of Mexico Data Atlas online systems for

  11. Mapping Oyster Reef Habitats in Mobile Bay

    Science.gov (United States)

    Bolte, Danielle

    2011-01-01

    Oyster reefs around the world are declining rapidly, and although they haven t received as much attention as coral reefs, they are just as important to their local ecosystems and economies. Oyster reefs provide habitats for many species of fish, invertebrates, and crustaceans, as well as the next generations of oysters. Oysters are also harvested from many of these reefs and are an important segment of many local economies, including that of Mobile Bay, where oysters rank in the top five commercial marine species both by landed weight and by dollar value. Although the remaining Mobile Bay oyster reefs are some of the least degraded in the world, projected climate change could have dramatic effects on the health of these important ecosystems. The viability of oyster reefs depends on water depth and temperature, appropriate pH and salinity levels, and the amount of dissolved oxygen in the water. Projected increases in sea level, changes in precipitation and runoff patterns, and changes in pH resulting from increases in the amount of carbon dioxide dissolved in the oceans could all affect the viability of oyster reefs in the future. Human activities such as dredging and unsustainable harvesting practices are also adversely impacting the oyster reefs. Fortunately, several projects are already under way to help rebuild or support existing or previously existing oyster reefs. The success of these projects will depend on the local effects of climate change on the current and potential habitats and man s ability to recognize and halt unsustainable harvesting practices. As the extent and health of the reefs changes, it will have impacts on the Mobile Bay ecosystem and economy, changing the resources available to the people who live there and to the rest of the country, since Mobile Bay is an important national source of seafood. This project identified potential climate change impacts on the oyster reefs of Mobile Bay, including the possible addition of newly viable

  12. Topobathymetric model of Mobile Bay, Alabama

    Science.gov (United States)

    Danielson, Jeffrey J.; Brock, John C.; Howard, Daniel M.; Gesch, Dean B.; Bonisteel-Cormier, Jamie M.; Travers, Laurinda J.

    2013-01-01

    Topobathymetric Digital Elevation Models (DEMs) are a merged rendering of both topography (land elevation) and bathymetry (water depth) that provides a seamless elevation product useful for inundation mapping, as well as for other earth science applications, such as the development of sediment-transport, sea-level rise, and storm-surge models. This 1/9-arc-second (approximately 3 meters) resolution model of Mobile Bay, Alabama was developed using multiple topographic and bathymetric datasets, collected on different dates. The topographic data were obtained primarily from the U.S. Geological Survey (USGS) National Elevation Dataset (NED) (http://ned.usgs.gov/) at 1/9-arc-second resolution; USGS Experimental Advanced Airborne Research Lidar (EAARL) data (2 meters) (http://pubs.usgs.gov/ds/400/); and topographic lidar data (2 meters) and Compact Hydrographic Airborne Rapid Total Survey (CHARTS) lidar data (2 meters) from the U.S. Army Corps of Engineers (USACE) (http://www.csc.noaa.gov/digitalcoast/data/coastallidar/). Bathymetry was derived from digital soundings obtained from the National Oceanic and Atmospheric Administration’s (NOAA) National Geophysical Data Center (NGDC) (http://www.ngdc.noaa.gov/mgg/geodas/geodas.html) and from water-penetrating lidar sources, such as EAARL and CHARTS. Mobile Bay is ecologically important as it is the fourth largest estuary in the United States. The Mobile and Tensaw Rivers drain into the bay at the northern end with the bay emptying into the Gulf of Mexico at the southern end. Dauphin Island (a barrier island) and the Fort Morgan Peninsula form the mouth of Mobile Bay. Mobile Bay is 31 miles (50 kilometers) long by a maximum width of 24 miles (39 kilometers) with a total area of 413 square miles (1,070 square kilometers). The vertical datum of the Mobile Bay topobathymetric model is the North American Vertical Datum of 1988 (NAVD 88). All the topographic datasets were originally referenced to NAVD 88 and no transformations

  13. 77 FR 2972 - Thunder Bay Power Company, Thunder Bay Power, LLC, et al.

    Science.gov (United States)

    2012-01-20

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission Thunder Bay Power Company, Thunder Bay Power, LLC, et al.; Notice of Application for Transfer of Licenses, and Soliciting Comments and Motions To Intervene Thunder Bay Power Company Project No. 2404-095 Thunder Bay Power, LLC Midwest Hydro, Inc...

  14. 33 CFR 165.835 - Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL.

    Science.gov (United States)

    2010-07-01

    ... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. 165.835 Section 165.835 Navigation and Navigable Waters COAST GUARD... § 165.835 Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. (a) Definition. As used in...

  15. 2014 Mobile County, AL Lidar

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Atlantic was contracted to acquire high resolution topographic LiDAR (Light Detection and Ranging) data located in Mobile County, Alabama. The intent was to collect...

  16. Mobile Bay river plume mixing in the inner shelf

    Science.gov (United States)

    Parra, S. M.; Book, J. W.; Warner, S. J.; Moum, J.

    2017-12-01

    The microtidal region (0.5 m spring tides) of the inner shelf outside Mobile Bay presented a complex circulation pattern driven by the pulsed river discharge and winds. Currents, salinity, temperature, and turbulence profiles were measured for up to three weeks in April 2016 at six moorings outside Mobile Bay. Currents varied between locations and with depth. During neap and spring tides the currents were reliably >0.4 and 0.5 m/s) and toward deeper waters, concurrent with the strongest stratification. The possible flow drivers considered include tides, winds, inertial oscillations, waves, and stratification. Turbulent kinetic energy production and dissipation were calculated with multiple methods using data from bottom-mounted, upward-looking acoustic Doppler current profilers sampling at 1 Hz, and using data from line-moored chi-pod turbulent temperature microstructure instruments sampling at 100 Hz. This work explores different forcing mechanisms involved in modulating the circulation and turbulence in a multi-layered pulsed-river inner shelf region in the Gulf of Mexico.

  17. 77 FR 64411 - Safety Zone; Cooper T. Smith Fireworks Event; Mobile River; Mobile, AL

    Science.gov (United States)

    2012-10-22

    ... 1625-AA00 Safety Zone; Cooper T. Smith Fireworks Event; Mobile River; Mobile, AL AGENCY: Coast Guard... safety zone for a portion of the Mobile River, Mobile, AL in the vicinity of Cooper Riverside Park. This..., mariners, and persons unless specifically authorized by the Captain of the Port Mobile or a designated...

  18. 76 FR 13615 - B&B Manufacturing Site; Mobile, Mobile County, AL; Notice of Settlement

    Science.gov (United States)

    2011-03-14

    ... settlement for reimbursement of past response costs concerning the B&B Manufacturing Site located in Mobile, Mobile County, Alabama for publication. DATES: The Agency will consider public comments on the settlement... Site; Mobile, Mobile County, AL; Notice of Settlement AGENCY: Environmental Protection Agency. ACTION...

  19. Benthic foraminiferal census data from Mobile Bay, Alabama--counts of surface samples and box cores

    Science.gov (United States)

    Richwine, Kathryn A.; Osterman, Lisa E.

    2012-01-01

    A study was undertaken in order to understand recent environmental change in Mobile Bay, Alabama. For this study a series of surface sediment and box core samples was collected. The surface benthic foraminiferal data provide the modern baseline conditions of the bay and can be used as a reference for changing paleoenvironmental parameters recorded in the box cores. The 14 sampling locations were chosen in the bay to cover the wide diversity of fluvial and marine-influenced environments on both sides of the shipping channel.

  20. Land-use and Land-cover Change from 1974 to 2008 around Mobile Bay

    Science.gov (United States)

    Ellis, Jean; Spruce, Joseph; Smoot, James; Hilbert, Kent; Swann, Roberta

    2008-01-01

    This project is a Gulf of Mexico Application Pilot in which NASA Stennis Space Center (SSC) is working within a regional collaboration network of the Gulf of Mexico Alliance. NASA researchers, with support from the NASA SSC Applied Science Program Steering Committee, employed multi-temporal Landsat data to assess land-use and land-cover (LULC) changes in the coastal counties of Mobile and Baldwin, AL, between 1974 and 2008. A multi-decadal time-series, coastal LULC product unique to NASA SSC was produced. The geographic extent and nature of change was quantified for the open water, barren, upland herbaceous, non-woody wetland, upland forest, woody wetland, and urban landscapes. The National Oceanic and Atmospheric Administration (NOAA) National Coastal Development Data Center (NCDDC) will assist with the transition of the final product to the operational end user, which primarily is the Mobile Bay National Estuary Program (MBNEP). We found substantial LULC change over the 34-year study period, much more than is evident when the change occurring in the last years. Between 1974 and 2008, the upland forest landscape lost almost 6% of the total acreage, while urban land cover increased by slightly more than 3%. With exception to open water, upland forest is the dominant landscape, accounting for about 25-30% of the total area.

  1. Land-Use and Land-Cover Change around Mobile Bay, Alabama from 1974-2008

    Science.gov (United States)

    Ellis, Jean; Spruce, Joseph P.; Swann, Roberta; Smooth, James C.

    2009-01-01

    This document summarizes the major findings of a Gulf of Mexico Application Pilot project led by NASA Stennis Space Center (SSC) in conjunction with a regional collaboration network of the Gulf of Mexico Alliance (GOMA). NASA researchers processed and analyzed multi-temporal Landsat data to assess land-use and land-cover (LULC) changes in the coastal counties of Mobile and Baldwin, AL between 1974 and 2008. Our goal was to create satellite-based LULC data products using methods that could be transferable to other coastal areas of concern within the Gulf of Mexico. The Mobile Bay National Estuary Program (MBNEP) is the primary end-user, however, several other state and local groups may benefit from the project s data products that will be available through NOAA-NCDDC s Regional Ecosystem Data Management program. Mobile Bay is a critical ecologic and economic region in the Gulf of Mexico and to the entire country. Mobile Bay was designated as an estuary of national significance in 1996. This estuary receives the fourth largest freshwater inflow in the United States. It provides vital nursery habitat for commercially and recreationally important fish species. It has exceptional aquatic and terrestrial bio-diversity, however, its estuary health is influenced by changing LULC patterns, such as urbanization. Mobile and Baldwin counties have experienced a population growth of 1.1% and 20.5% from 2000-2006. Urban expansion and population growth are likely to accelerate with the construction and operation of the ThyssenKrupp steel mill in the northeast portion of Mobile County. Land-use and land-cover change can negatively impact Gulf coast water quality and ecological resources. The conversion of forest to urban cover types impacts the carbon cycle and increases the freshwater and sediment in coastal waters. Increased freshwater runoff decreases salinity and increases the turbidity of coastal waters, thus impacting the growth potential of submerged aquatic vegetation (SAV

  2. Assessment of the mobility of metals and semi-metals in Sepetiba Bay (Rio de Janeiro - Brazil) by analyzing sediments sampled in different periods

    International Nuclear Information System (INIS)

    Cortez, Vinicius D.; Ribeiro, Andreza P.; Figueiredo, Ana M.G.; Santos, Jose O.; Wassermann, Julio C.

    2005-01-01

    In the last three decades, Sepetiba bay, located about 60 km south of the city of Rio de Janeiro, Brazil, has been subjected to increasing pollution impacts. The Sepetiba region has undergone fast industrial expansion leading to high levels of pollution by metals. For the last two decades, an industrial park composed of about 400 industrial plants, basically metallurgical, was established in the Sepetiba Bay basin, releasing its effluents either straight into the bay or through local rivers. Potential toxic elements such as As, Zn, Cr, Pb and Cd have been introduced into the bay through industrial and domestic wastes. In the present paper, instrumental neutron activation analysis (INAA) was applied to determine the elements As, Cr and Zn in sediments from Sepetiba bay, sampled in August 2003, in order to compare to previous results obtained in 1998, for these elements, by Pellegatti et al. (2001). By using a geostatistical model it was possible to evaluate the spatial mobility of As, Cr and Zn in the last six years. The results obtained showed that none of the studied elements showed a significant spatial mobility. This behavior is probably related to geochemical barriers present in Sepetiba bay. (author)

  3. 33 CFR 110.194a - Mobile Bay, Ala., and Mississippi Sound, Miss.

    Science.gov (United States)

    2010-07-01

    ... Sound, Miss. 110.194a Section 110.194a Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF... Mississippi Sound, Miss. (a) The anchorage grounds. (1) The waters of lower Mobile Bay, near Cedar Point... south by latitude 30°20′00″, and on the west by longitude 88°06′00″. (2) The waters of Mississippi Sound...

  4. Evaluating the Impact of Land Use Change on Submerged Aquatic Vegetation Stressors in Mobile Bay

    Science.gov (United States)

    Al-Hamdan, Mohammad; Estes, Maurice G., Jr.; Quattrochi, Dale; Thom, Ronald; Woodruff, Dana; Judd, Chaeli; Ellis, Jean; Watson, Brian; Rodriquez, Hugo; Johnson, Hoyt

    2009-01-01

    Alabama coastal systems have been subjected to increasing pressure from a variety of activities including urban and rural development, shoreline modifications, industrial activities, and dredging of shipping and navigation channels. The impacts on coastal ecosystems are often observed through the use of indicator species. One such indicator species for aquatic ecosystem health is submerged aquatic vegetation (SAV). Watershed and hydrodynamic modeling has been performed to evaluate the impact of land use change in Mobile and Baldwin counties on SAV stressors and controlling factors (temperature, salinity, and sediment) in Mobile Bay. Watershed modeling using the Loading Simulation Package in C++ (LSPC) was performed for all watersheds contiguous to Mobile Bay for land use scenarios in 1948, 1992, 2001, and 2030. Landsat-derived National Land Cover Data (NLCD) were used in the 1992 and 2001 simulations after having been reclassified to a common classification scheme. The Prescott Spatial Growth Model was used to project the 2030 land use scenario based on current trends. The LSPC model simulations provided output on changes in flow, temperature, and sediment for 22 discharge points into the Bay. Theses results were inputted in the Environmental Fluid Dynamics Computer Code (EFDC) hydrodynamic model to generate data on changes in temperature, salinity, and sediment on a grid with four vertical profiles throughout Mobile Bay. The changes in the aquatic ecosystem were used to perform an ecological analysis to evaluate the impact on SAV habitat suitability. This is the key product benefiting the Mobile Bay coastal environmental managers that integrates the influences of temperature, salinity, and sediment due to land use driven flow changes with the restoration potential of SAVs.

  5. Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

    Science.gov (United States)

    Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

    2017-12-01

    Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

  6. Sediment Sampling for Poly-Aromatic Hydrocarbons (PAHs) in Mobile Bay and Mississippi Sound in 2013 (NODC Accession 0116480)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Sediment samples were collected at ten sites within Mobile Bay and Mississippi Sound on January 28, 2013, for PAH analysis. All samples tested were below detection...

  7. Physical, chemical, and biological data collected in Mobile Bay, Alabama in May 1989-December 1999 (NODC Accession 0116496)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset contains physical, chemical, and biological data collected during ten years of near-monthly shipboard surveys carried out in Mobile Bay between May 1989...

  8. Seasonal variability in the surface sediments of Mobile Bay, Alabama, recorded by geochemistry and foraminifera, 2009–2010

    Science.gov (United States)

    Umberger, D.K.; Osterman, L.E.; Smith, C.G.; Frazier, J.; Richwine, K.A.

    2012-01-01

    A study was undertaken in order to document and quantify recent environmental change in Mobile Bay, Alabama. The study was part of the Northern Gulf of Mexico (NGOM) Ecosystem Change and Hazard Susceptibility project, a regional project funded by the Coastal and Marine Geology Program to understand how natural forcings and anthropogenic modifications influence coastal ecosystems and their susceptibility to coastal hazards. Mobile Bay is a large drowned-river estuary that has been modified significantly by humans to accommodate the Port of Mobile. Examples include repeated dredging of a large shipping channel down the central axis of the bay and construction of a causeway across the head of the bay and at the foot of the bayhead delta. In addition to modifications, the bay is also known to have episodic periods of low oxygen (hypoxia) that result in significant mortality to fish and benthic organisms (May, 1973). For this study a series of surface sediment samples were collected. Surface benthic foraminiferal and bulk geochemical data provide the modern baseline conditions of the bay and can be used as a reference to changing environmental parameters in the past (Osterman and Smith, in press) and into the future. This report archives data collected as part of the Mobile Bay Study that may be used in future environmental change studies.

  9. Over 100 years of environmental change recorded by foraminifers and sediments in Mobile Bay, Alabama, Gulf of Mexico, USA

    Science.gov (United States)

    Osterman, Lisa E.; Smith, Christopher G.

    2012-12-01

    The marine microfauna of Mobile Bay has been profoundly influenced by the development and expansion of the primary shipping channel over the last ˜100 years. Foraminifers and sediments from seven box cores with excess lead-210 chronology document that channel dredging and spoil disposal have altered circulation, reduced estuarine mixing, changed sedimentation patterns, and caused a faunal turnover within the bay. Beginning in the late 1800s, changes in estuarine mixing allowed for greater low-pH freshwater influence in the bay, and ultimately began environmental changes that resulted in the loss of calcareous foraminifers. By the early 1900s, box cores throughout Mobile Bay record a ˜100-year trend of increasing calcareous test dissolution that continues to the present. Since the completion of the current shipping channel in the 1950s, restricted tidal flushing and increased terrestrial organic matter, documented by carbon-to-nitrogen ratios, stimulated an increase in agglutinated foraminiferal densities. However, in deeper areas of the bay, hypoxic water has negatively impacted the marine microfauna. Comparisons of the present-day foraminiferal assemblage with foraminifers collected in the early 1970s indicate that the continued biologic loss of calcareous foraminifers in the bay has allowed the introduction of a new agglutinated foraminiferal species into the bay.

  10. Characterization of Dredged Oyster Shell Deposits at Mobile Bay, Alabama Using Geophysical Methods

    Directory of Open Access Journals (Sweden)

    Stanley C. Nwokebuihe

    2016-12-01

    Full Text Available The need for disposing materials dredged from ship channels is a common problem in bays and lagoons. This study is aimed at investigating the suitability of scour features produced by dredging oyster shell deposits in Mobile Bay, Alabama, to dispose excavated channel material. A study area approximately 740 by 280 m lying about 5 km east of Gaillard Island was surveyed using underwater electrical resistivity tomography (UWERT and continuous electrical resistivity profiling (CERP tools. The geophysical survey was conducted with the intent to map scour features created by oyster shell dredging activities in the bay between 1947 and 1982. The geoelectrical surveys show that oyster beds are characterized by high resistivity values greater than 1.1 ohm.m while infilled dredge cuts show lower resistivity, generally from 0.6 to 1.1 ohm.m. The difference in resistivity mainly reflects the lithology and the consolidation of the shallow sediments: consolidated silty clay and sandy sediments rich in oyster shell deposits (with less clay content overlying unconsolidated clayey materials infilling the scours. Results show that most of the infilled dredge cuts are mostly distributed in the north-south direction. Considering that the scours are generally up to 6 m deep across the survey location, it is estimated that about 0.8 million cubic meters of oyster shells and overlying strata were dredged from the survey location.

  11. Watershed and Hydrodynamic Modeling for Evaluating the Impact of Land Use Change on Submerged Aquatic Vegetation and Seagrasses in Mobile Bay

    Science.gov (United States)

    Estes, Maurice G.; Al-Hamdan, Mohammed; Thom, Ron; Quattrochi, Dale; Woodruff, Dana; Judd, Chaeli; Ellism Jean; Watson, Brian; Rodriguez, Hugo; Johnson, Hoyt

    2009-01-01

    There is a continued need to understand how human activities along the northern Gulf of Mexico coast are impacting the natural ecosystems. The gulf coast is experiencing rapid population growth and associated land cover/land use change. Mobile Bay, AL is a designated pilot region of the Gulf of Mexico Alliance (GOMA) and is the focus area of many current NASA and NOAA studies, for example. This is a critical region, both ecologically and economically to the entire United States because it has the fourth largest freshwater inflow in the continental USA, is a vital nursery habitat for commercially and recreational important fisheries, and houses a working waterfront and port that is expanding. Watershed and hydrodynamic modeling has been performed for Mobile Bay to evaluate the impact of land use change in Mobile and Baldwin counties on the aquatic ecosystem. Watershed modeling using the Loading Simulation Package in C++ (LSPC) was performed for all watersheds contiguous to Mobile Bay for land use Scenarios in 1948, 1992, 2001, and 2030. The Prescott Spatial Growth Model was used to project the 2030 land use scenario based on observed trends. All land use scenarios were developed to a common land classification system developed by merging the 1992 and 2001 National Land Cover Data (NLCD). The LSPC model output provides changes in flow, temperature, sediments and general water quality for 22 discharge points into the Bay. These results were inputted in the Environmental Fluid Dynamics Computer Code (EFDC) hydrodynamic model to generate data on changes in temperature, salinity, and sediment concentrations on a grid with four vertical profiles throughout the Bay s aquatic ecosystems. The models were calibrated using in-situ data collected at sampling stations in and around Mobile bay. This phase of the project has focused on sediment modeling because of its significant influence on light attenuation which is a critical factor in the health of submerged aquatic

  12. Top-down control of phytoplankton by oysters in Chesapeake Bay, USA: Comment on Pomeroy et al. (2006)

    Science.gov (United States)

    Pomeroy et al. (2006) proposed that temporal and spatial mismatches between eastern oyster filtration and phytoplankton abundance will preclude restored stocks of eastern oysters from reducing the severity of hypoxia in the deep channel of central Chesapeake Bay. We refute this c...

  13. Harmful Algal Blooms in the Mississippi Sound and Mobile Bay: Using MODIS Aqua and In Situ Data for HABs in the Northern Gulf of Mexico

    National Research Council Canada - National Science Library

    Holiday, Dan; Carter, Gregory; Gould, Richard W; MacIntyre, Hugh

    2007-01-01

    .... Phytoplankton populations and in situ water quality were monitored at 3 to 6 week intervals at 17 locations in Mobile Bay and the Mississippi Sound beginning in July 2005 and continuing thru June...

  14. Greenhouse Gas Source Detection and Attribution in the San Francisco Bay Area of California Using a Mobile Measurement Platform

    Science.gov (United States)

    Martien, P. T.; Guha, A.; Newman, S.; Young, A.; Bower, J.; Perkins, I.; Randall, S.; Stevenson, E.; Hilken, H.

    2017-12-01

    The Bay Area Air Quality Management District, the San Francisco Bay Area's air quality regulatory agency, has set a goal to reduce the region's greenhouse gas (GHG) emissions 80% below 1990 levels by 2050, consistent with the State of California's climate goals. Recently, the Air District's governing board adopted a 2017 Clean Air Plan advancing the agency's vision and including actions to put the region on a path to achieving the 2050 goal while also reducing air pollution and related health impacts. The Plan includes GHG rule-making efforts, policy initiatives, local government partnerships, outreach, grants and incentives, encompassing over 250 specific implementation actions across all economic sectors to effect ambitious emission reductions in the region. To support the 2017 Plan, the Air District has built a mobile measurement platform (GHG research van) to perform targeted CH4 emissions hotspot detection and source attribution. Instruments in the van measure CH4, CO2 and N2O in ambient plumes. Coincident measurements of source tracers like isotopic methane (13C - CH4), CO and ethane (C2H6) provide the capability to distinguish between biogenic, combustion-based and fossil-based fugitive methane sources. We report observations of CH4 plumes from source-specific measurements in and around facilities including a wastewater treatment plant, a composting operation, a waste-to-energy anaerobic digestion plant and a few refineries. We performed leak surveys inside several electric utility-operated facilities including a power plant and an underground natural gas storage facility. We sampled exhaust from a roadway tunnel and computed fleet-averaged automobile-related CH4 and N2O emission factors. We used tracer-to-tracer emission ratios to create chemical signatures of emissions from each sampled source category. We compare measurement-based ratios with those used to derive the regional GHG inventory. Data from these and other sources will lead to an improved

  15. The areal extent of brown shrimp habitat suitability in Mobile Bay, Alabama, USA: Targeting vegetated habitat restoration

    Science.gov (United States)

    Smith, L.M.; Nestlerode, J.A.; Harwell, L.C.; Bourgeois, P.

    2010-01-01

    The availability of wetlands and shallow water habitats significantly influences Gulf of Mexico (GOM) penaeid shrimp fishery productivity. However, the GOM region has the highest rate of wetland loss in the USA. Protection and management of these vital GOM habitats are critical to sustainable shrimp fisheries. Brown shrimp (Farfantepenaeus aztecus) are a major component of GOM fisheries. We present an approach for estimating the areal extent of suitable habitat for post-larval and juvenile brown shrimp in Mobile Bay, Alabama, using an existing habitat suitability index model for the northern GOM calculated from probabilistic survey of water quality and sediment data, land cover data, and submerged aquatic vegetation coverages. This estuarine scale approach is intended to support targeted protection and restoration of these habitats. These analyses indicate that approximately 60% of the area of Mobile Bay is categorized as suitable to near optimal for post-larval and juvenile shrimp and 38% of the area is marginally to minimally suitable. We identify potential units within Mobile Bay for targeted restoration to improve habitat suitability. ?? 2010 Springer Science+Business Media B.V.

  16. Extraction procedure compared to attenuation model to assess heavy metals mobility in sediments from Sepetiba Bay, Rio de Janeiro

    International Nuclear Information System (INIS)

    Ribeiro, Andreza Portella

    2006-01-01

    Sepetiba bay, located about 60 km west of the metropolitan region of Rio de Janeiro city, has undergone notable development in the last decades, with the establishment of about 400 industrial plants in its basin, basically metallurgical, which release its industrial waste either straight into the bay or through local rivers. The Sepetiba harbor also brought up a lot of industrial investment in that area. This urban and industrial expansion caused several environmental impacts, mainly due to the presence of heavy metals and other potentially toxic substances present in the effluents discharged into the bay. This work aimed to assess heavy metal (Cd, Cu, Ni, Pb e Zn) contamination and mobility in sediments from Sepetiba bay. The acid-volatile sulfides (AVS) and the concentration of simultaneously extracted metals (SIGMA[SEM) were determined in 65 sediment samples from Sepetiba bay, representing the whole area. The results obtained showed that Cd, Cu, Pb and Zn presented higher concentrations in the northeastern area (mainly in the mouth of Guandu and Canal de Sao Francisco rivers), while the highest concentration of Ni were observed in the western region of the bay. The comparison between SEM concentrations with the Canadian Sediment Quality Guidelines (TEL and PEL) indicated that Cd and Zn presented values which may hazard to aquatic organisms (concentration levels above PEL); the elements Cu, Pb and Ni presented concentration levels below PEL, suggesting low probability of toxicological effects to the aquatic organisms. On the other hand, the ratio Σ[SEM]/[AVS] was below 1 in the northeastern region, indicating that, in spite of the high concentration of the analyzed metals in this area, they are trapped in the sediment, as sulfides. The total metal concentrations in the sediments were also determined and the same distribution pattern obtained for the SEM were observed, with high concentrations in the northeastern region of the bay, classifying the area as level 2

  17. 2014 Mobile County, AL DMC 4-Band 8 Bit Imagery

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This dataset was developed to support Mobile County. The project area is 1402 square miles of Mobile County land. The scope of work involved data acquisition and...

  18. Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

    International Nuclear Information System (INIS)

    Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

    2014-01-01

    We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

  19. Results of a modeling workshop concerning economic and environmental trends and concomitant resource management issues in the Mobile Bay area

    Science.gov (United States)

    Hamilton, David B.; Andrews, Austin K.; Auble, Gregor T.; Ellison, Richard A.; Johnson, Richard A.; Roelle, James E.; Staley, Michael J.

    1982-01-01

    During the past decade, the southern regions of the U.S. have experienced rapid change which is expected to continue into the foreseeable future. Growth in population, industry, and resource development has been attributed to a variety of advantages such as an abundant and inexpensive labor force, a mild climate, and the availability of energy, water, land, and other natural resources. While this growth has many benefits for the region, it also creates the potential for increased air, water, and solid waste pollution, and modification of natural habitats. A workshop was convened to consider the Mobile Bay area as a site-specific case of growth and its environmental consequences in the southern region. The objectives of the modeling workshop were to: (1) identify major factors of economic development as they relate to growth in the area over the immediate and longer term; (2) identify major environmental and resource management issues associated with this expected growth; and (3) identify and characterize the complex interrelationships among economic and environmental factors. This report summarizes the activities and results of a modeling workshop concerning economic growth and concomitant resource management issues in the Mobile Bay area. The workshop was organized around construction of a simulation model representing the relationships between a series of actions and indicators identified by participants. The workshop model had five major components. An Industry Submodel generated scenarios of growth in several industrial and transportation sectors. A Human Population/Economy Submodel calculated human population and economic variables in response to employment opportunities. A Land Use/Air Quality Submodel tabulated changes in land use, shoreline use, and air quality. A Water Submodel calculated indicators of water quality and quantity for fresh surface water, ground water, and Mobile Bay based on discharge information provided by the Industry and Human

  20. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    International Nuclear Information System (INIS)

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  1. Embedding Repetition (Takrir Technique in Developing Al-Quran Memorizing Mobile Application for Autism Children

    Directory of Open Access Journals (Sweden)

    Senan Norhalina

    2017-01-01

    Full Text Available Nowadays, there are various types of learning materials used in the process of teaching and learning of Al-Quran including the use of mobile application. However, the features of mobile application that are appropriate for the process of memorizing the Al-Quran, especially for the needs of children with autism is still limited. Thus, this paper proposes an interactive Al-Quran mobile application namely iHafaz to facilitate autism children recite and memorizing Al-Quran. A takrir (repetition technique in Islamic learning approach is embedded in this mobile application in order to assist autism children memorizing the Al-Quran easily. This mobile application consists of two main modules which are Hafaz (Memorize and Latihan (Exercise. Result from the user testing shows that 72.4% of respondents agree that the takrir technique embedded in the mobile application able to improve the usability of the mobile application in helping the autism children to recite and memorize the Al-Quran easily.

  2. Examining the role of SGD on the nitrogen budget of the fourth largest estuary in the USA, Mobile Bay, Alabama

    Science.gov (United States)

    Dimova, N. T.; Montiel, D.; Lu, Y.; Adyasari, D.

    2017-12-01

    The present study aims to help understand further the importance of submarine groundwater discharge (SGD) to Mobile Bay, Alabama with respect to associated nitrogen (N-) fluxes. Based on a three-year long study we found that on a large scale, when comparing Mobile River discharge to SGD, during the dry season, the SGD flux is only 2.5% of Mobile River discharge, whereas, during the wet season, this contribution is less than 1%. However, when examining the nitrogen budget of MB, we found that during the dry season, SGD delivers about half of the fluxes to the Bay. Furthermore, we found that the distribution of these SGD-derived inputs along the MB shoreline is very heterogeneous. Shallow geophysical electrical resistivity imaging and multiple sediment cores recovered in the examined areas reveal a rich organic sediment layer (up to 80 cm thick at some locations) which is perhaps responsible for the observed enhanced N-fluxes. Ongoing microbial, DOM and stable isotope sediment examination aim to explain the geochemical processes responsible for the disproportionally large SGD-delivered nitrogen fluxes in the identified impacted coastal areas.

  3. TATA CARA PELAKSANAAN SHALAT JUM'AT (Studi Naskah “Sulûk Al-Jâddah Fî Bayân Al-Jum’ah” Karya Syeikh Nawawi al-Bantani

    Directory of Open Access Journals (Sweden)

    Masrukhin Muhsin

    2012-07-01

    Full Text Available Makalah ini merupakan hasil penelitian naskah “Sulûk al-Jâddah Fî Bayân al-Jum’ah” Karya Syeikh Nawawi al-Bantani. Penelitian ini menggunakan pendekatan filologi. Dalam penelitian filologi dikenal dua perlakuan terhadap naskah. Pertama, memperlakukan satu naskah sebagai bagian dari naskah-naskah lainnya yang sejudul. Dalam hal ini semua naskah yang sejudul dikumpulkan di manapun adanya, dengan tujuan mendapatkan naskah asli atau dianggap paling mendekati asli. Kedua, memperlakukan naskah sebagai naskah tunggal. Dalam hal ini peneliti mengesampingkan naskah lain yang kemungkinan ada di tempat lain. Dari dua model tersebut, penelitian ini menggunakan model kedua. Alasannya, naskah Sulûk al-Jâddah fî Bayân al- Jum’ah untuk sementara dinyatakan sebagai naskah tunggal dengan indikasi tidak ditemukan naskah lain. Untuk menganalisa data naskah, dilakukan pembacaan dua tahap, heuristik dan hermeneutik. Adapun pokok-pokok bahasan yang ada dalam naskah Sulûk al-Jâddah fî Bayân al-Jum’ah adalah berisi tentang masalah shalat Jumát dan permasalahan-perasalahan yang dihadapi oleh masyarakat seputar shalat Jum’at dan shalat Jum’at yang diulang.

  4. A Landsat-Based Assessment of Mobile Bay Land Use and Land Cover Change from 1974 to 2008

    Science.gov (United States)

    Spruce, Joseph; Ellis, Jean; Smoot, James; Swann, Roberta; Graham, William

    2009-01-01

    The Mobile Bay region has experienced noteworthy land use and land cover (LULC) change in the latter half of the 20th century. Accompanying this change has been urban expansion and a reduction of rural land uses. Much of this LULC change has reportedly occurred since the landfall of Hurricane Frederic in 1979. The Mobile Bay region provides great economic and ecologic benefits to the Nation, including important coastal habitat for a broad diversity of fisheries and wildlife. Regional urbanization threatens the estuary s water quality and aquatic-habitat dependent biota, including commercial fisheries and avian wildlife. Coastal conservation and urban land use planners require additional information on historical LULC change to support coastal habitat restoration and resiliency management efforts. This presentation discusses results of a Gulf of Mexico Application Pilot project that was conducted in 2008 to quantify and assess LULC change from 1974 to 2008. This project was led by NASA Stennis Space Center and involved multiple Gulf of Mexico Alliance (GOMA) partners, including the Mobile Bay National Estuary Program (NEP), the U.S. Army Corps of Engineers, the National Oceanic and Atmospheric Administration s (NOAA s) National Coastal Data Development Center (NCDDC), and the NOAA Coastal Services Center. Nine Landsat images were employed to compute LULC products because of their availability and suitability for the application. The project also used Landsat-based national LULC products, including coastal LULC products from NOAA s Coastal Change & Analysis Program (C-CAP), available at 5-year intervals since 1995. Our study was initiated in part because C-CAP LULC products were not available to assess the region s urbanization prior to 1995 and subsequent to post Hurricane Katrina in 2006. This project assessed LULC change across the 34-year time frame and at decadal and middecadal scales. The study area included the majority of Mobile and Baldwin counties that

  5. Die Welt als Spielfeld: Mobile Serious Games mit Augmented Reality

    NARCIS (Netherlands)

    Klemke, Roland; Schneider, Jan; Happe, Sven; Bockelmann, Timo; Börner, Dirk; Specht, Marcus

    2014-01-01

    Technological innovations enable us to connect computer games with the environment they are played in: augmented reality games take the world as their playground. In this talk, the use of such technologies for mobile serious games is explored.

  6. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    International Nuclear Information System (INIS)

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Combined SEM/AVS and attenuation of concentration models for the assessment of bioavailability and mobility of metals in sediments of Sepetiba Bay (SE Brazil).

    Science.gov (United States)

    Ribeiro, Andreza Portella; Figueiredo, Ana Maria Graciano; dos Santos, José Osman; Dantas, Elizabeth; Cotrim, Marycel Elena Barboza; Figueira, Rubens Cesar Lopes; Silva Filho, Emmanoel V; Wasserman, Julio Cesar

    2013-03-15

    This study proposes a new methodology to study contamination, bioavailability and mobility of metals (Cd, Cu, Ni, Pb, and Zn) using chemical and geostatistics approaches in marine sediments of Sepetiba Bay (SE Brazil). The chemical model of SEM (simultaneously extracted metals)/AVS (acid volatile sulfides) ratio uses a technique of cold acid extraction of metals to evaluate their bioavailability, and the geostatistical model of attenuation of concentrations estimates the mobility of metals. By coupling the two it was observed that Sepetiba Port, the urban area of Sepetiba and the riverine discharges may constitute potential sources of metals to Sepetiba Bay. The metals are concentrated in the NE area of the bay, where they tend to have their lowest mobility, as shown by the attenuation model, and are not bioavailable, as they tend to associate with sulfide and organic matter originated in the mangrove forests of nearby Guaratiba area. Copyright © 2013 Elsevier Ltd. All rights reserved.

  8. Consideration of vertical uncertainty in elevation-based sea-level rise assessments: Mobile Bay, Alabama case study

    Science.gov (United States)

    Gesch, Dean B.

    2013-01-01

    The accuracy with which coastal topography has been mapped directly affects the reliability and usefulness of elevationbased sea-level rise vulnerability assessments. Recent research has shown that the qualities of the elevation data must be well understood to properly model potential impacts. The cumulative vertical uncertainty has contributions from elevation data error, water level data uncertainties, and vertical datum and transformation uncertainties. The concepts of minimum sealevel rise increment and minimum planning timeline, important parameters for an elevation-based sea-level rise assessment, are used in recognition of the inherent vertical uncertainty of the underlying data. These concepts were applied to conduct a sea-level rise vulnerability assessment of the Mobile Bay, Alabama, region based on high-quality lidar-derived elevation data. The results that detail the area and associated resources (land cover, population, and infrastructure) vulnerable to a 1.18-m sea-level rise by the year 2100 are reported as a range of values (at the 95% confidence level) to account for the vertical uncertainty in the base data. Examination of the tabulated statistics about land cover, population, and infrastructure in the minimum and maximum vulnerable areas shows that these resources are not uniformly distributed throughout the overall vulnerable zone. The methods demonstrated in the Mobile Bay analysis provide an example of how to consider and properly account for vertical uncertainty in elevation-based sea-level rise vulnerability assessments, and the advantages of doing so.

  9. Analysis of dissolved oxygen stress in oysters in Mobile Bay from 2010-05-26 to 1010-09-21 (NODC Accession 0125573)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Hatchery-reared adult and juvenile oysters were placed at 0.1 m and 1.0 m above bottom at Sand Reef and Denton Reef, Mobile Bay, Alabama between May 26 and Sep 21,...

  10. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  11. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  12. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    International Nuclear Information System (INIS)

    Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

    2011-01-01

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  13. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  14. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  15. Effects of small-scale hydrogeologic heterogeneity on submarine groundwater discharge (SGD) dynamics in river dominated estuaries: example of Mobile Bay, Alabama

    Science.gov (United States)

    Montiel, D.; Dimova, N.

    2017-12-01

    Submarine groundwater discharge (SGD) is known to be an important pathway for nutrients and dissolved constituents in estuarine environments worldwide. Despite its limited contribution to the total fresh water flux to the ocean (5 - 10 %), SGD-derived material loadings can rival riverine inputs. Therefore, a good understanding of the coastal hydrogeology and subsequent SGD dynamics is crucial to further investigate constituent fluxes and its implications on small and large scale coastal ecosystems. We evaluated SGD in Mobile Bay (Alabama), the fourth largest estuary in the US, using a combination of radiotracer techniques (223Ra, 226Ra, and 222Rn), stable isotopes (δ 18O and δ 2H), geophysical surveys (continuous resistivity profiling (CRP) and electrical resistivity tomography (ERT)), and seepage meters during three consecutive years. A detailed examination of the entire shoreline of Mobile Bay using CRP, ERT imaging, and multiple sediment cores collection unveiled a heterogeneous (horizontal and vertical) distribution of the surficial coastal aquifer. This was reflected and confirmed by groundwater tracer measurements and direct measurements of SGD in the coastal zone. We found that SGD occurs mainly in the northeast section of Mobile Bay with a total flux that ranged between 0.9 and 13 × 105 m3 d-1 during dry and wet periods, which represents 0.4 - 2 % of the total fresh water inputs into the Bay. While total SGD is insignificant when accounting the whole water budget of Mobile Bay, we found that small-scale geology variations produce groundwater flow preferential pathways in particular areas where SGD inputs play an important role in the water and nutrient budgets.

  16. An examination of historic inorganic sedimentation and organic matter accumulation in several marsh types within the Mobile Bay and and Mobile-Tensaw River Delta region

    Science.gov (United States)

    Smith, Christopher G.; Osterman, Lisa E.; Poore, Richard Z.

    2013-01-01

    Mass accumulation rates (MAR; g cm-2 y-1), linear sedimentation rates (LSR; cm y-1), and core geochronology derived from excess lead-210 (210Pb) profiles and inventories measured in six sediment cores collected from marsh sites from the MobileTensaw River Delta and Mobile Bay region record the importance of both continuous and event-driven inorganic sedimentation over the last 120 years. MAR in freshwater marshes varied considerably between sites and through time (0.24 and 1.31 g cm-2 y-1). The highest MARs occurred in the 1950s and 1960s and correspond to record discharge events along the Mobile and Tensaw Rivers. In comparison, MAR at salt marsh sites increased almost threefold over the last 120 years (0.05 to 0.18 g cm-2 y-1 or 0.23 to 0.48 cm y-1). From 1880 to 1960, organic accumulation remained fairly constant (20%), while intermittent pulses of high inorganic sedimentation were observed following 1960. The pulses in inorganic sedimentation coincide with several major hurricanes (e.g., Hurricanes Camille, Fredric, Georges, and Ivan). The nearly threefold increase in MAR in salt marshes during the last 120 years would thus appear to be partially dependent on inorganic sedimentation from storm events. This study shows that while hurricanes, floods, and other natural hazards are well-known threats to human infrastructure and coastal ecosystems, these events also transport sediment to marshes that help abate other pressures such as sea-level rise (SLR) and subsidence.

  17. Diffusivities and atomic mobilities in Cu-rich fcc Al-Cu-Mn alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Ming; Du, Yong; Cui, Senlin; Xu, Honghui; Liu, Shuhong [Central South Univ., Changsha (China). State Key Laboratory of Powder Metallurgy; Zhang, Lijun [Bochum Univ. (DE). Interdisciplinary Centre for Advanced Materials Simulation (ICAMS)

    2012-07-15

    Via solid-solid diffusion couples, electron probe microanalysis and the Whittle and Green method, interdiffusivities in fcc Al-Cu-Mn alloys at 1 123 K were measured. The reliability of the obtained diffusivities is validated by comparing the computed diffusivities with literature data plus constraints among the diffusivities. Through assessments of experimentally determined diffusion coefficients by means of a diffusion-controlled transformations simulation package, the atomic mobilities of Al, Cu, and Mn in fcc Al-Cu-Mn alloys are obtained. Comprehensive comparisons between the model-predicted and the experimental data indicate that the presently obtained atomic mobilities can reproduce most of the diffusivities, concentration profiles, and diffusion paths reasonably. (orig.)

  18. Hydrography and bottom boundary layer dynamics: Influence on inner shelf sediment mobility, Long Bay, North Carolina

    Science.gov (United States)

    Davis, L.A.; Leonard, L.A.; Snedden, G.A.

    2008-01-01

    This study examined the hydrography and bottom boundary-layer dynamics of two typical storm events affecting coastal North Carolina (NC); a hurricane and the passages of two small consecutive extratropical storms during November 2005. Two upward-looking 1200-kHz Acoustic Doppler Current Profilers (ADCP) were deployed on the inner shelf in northern Long Bay, NC at water depths of less than 15 m. Both instruments profiled the overlying water column in 0.35 in bins beginning at a height of 1.35 in above the bottom (mab). Simultaneous measurements of wind speed and direction, wave and current parameters, and acoustic backscatter were coupled with output from a bottom boundary layer (bbl) model to describe the hydrography and boundary layer conditions during each event. The bbl model also was used to quantify sediment transport in the boundary layer during each storm. Both study sites exhibited similar temporal variations in wave and current magnitude, however, wave heights during the November event were higher than waves associated with the hurricane. Near-bottom mean and subtidal currents, however, were of greater magnitude during the hurricane. Peak depth-integrated suspended sediment transport during the November event exceeded transport associated with the hurricane by 25-70%. Substantial spatial variations in sediment transport existed throughout both events. During both events, along-shelf sediment transport exceeded across-shelf transport and was related to the magnitude and direction of subtidal currents. Given the variations in sediment type across the bay, complex shoreline configuration, and local bathymetry, the sediment transport rates reported here are very site specific. However, the general hydrography associated with the two storms is representative of conditions across northern Long Bay. Since the beaches in the study area undergo frequent renourishment to counter the effects of beach erosion, the results of this study also are relevant to coastal

  19. Use of N stable isotope and microbial analyses to define wastewater influence in Mobile Bay, AL

    Energy Technology Data Exchange (ETDEWEB)

    Daskin, Joshua H. [MB 0193 Brandeis University, Waltham, MA 02454 (United States); Calci, Kevin R.; Burkhardt, William [1 Iberville Road, US Food and Drug Administration Gulf Coast Seafood Laboratory, Dauphin Island, AL 36528 (United States); Carmichael, Ruth H. [101 Bienville Boulevard, Dauphin Island Sea Lab, Dauphin Island, AL 36528 (United States); University of South Alabama, Mobile, AL, 36688 (United States)], E-mail: rcarmichael@disl.org

    2008-05-15

    We assessed short-term ecological and potential human health effects of wastewater treatment plant (WTP) effluent by measuring {delta}{sup 15}N per mille and microbial concentrations in oysters and suspended particulate matter (SPM). We also tested male-specific bacteriophage (MSB) as an alternative to fecal coliforms, to assess potential influence of wastewater contamination on shellfish. WTP effluent did not affect oyster growth or survival, but SPM and oysters acquired wastewater-specific {delta}{sup 15}N per mille . {delta}{sup 15}N values were depleted near the WTP, typical of low-level processed wastewater. Fecal coliform and MSB concentrations were higher in samples taken closest to the WTP, and MSB values were significantly correlated with {delta}{sup 15}N per mille in oyster tissues. Overall, oysters demonstrated relatively rapid integration and accumulation of wastewater-specific {delta}{sup 15}N per mille and indicator microorganisms compared to water samples. These data suggest oysters were superior sentinels compared to water, and MSB was a more reliable indicator of wastewater influence on shellfish than fecal coliforms.

  20. Use of N stable isotope and microbial analyses to define wastewater influence in Mobile Bay, AL

    International Nuclear Information System (INIS)

    Daskin, Joshua H.; Calci, Kevin R.; Burkhardt, William; Carmichael, Ruth H.

    2008-01-01

    We assessed short-term ecological and potential human health effects of wastewater treatment plant (WTP) effluent by measuring δ 15 N per mille and microbial concentrations in oysters and suspended particulate matter (SPM). We also tested male-specific bacteriophage (MSB) as an alternative to fecal coliforms, to assess potential influence of wastewater contamination on shellfish. WTP effluent did not affect oyster growth or survival, but SPM and oysters acquired wastewater-specific δ 15 N per mille . δ 15 N values were depleted near the WTP, typical of low-level processed wastewater. Fecal coliform and MSB concentrations were higher in samples taken closest to the WTP, and MSB values were significantly correlated with δ 15 N per mille in oyster tissues. Overall, oysters demonstrated relatively rapid integration and accumulation of wastewater-specific δ 15 N per mille and indicator microorganisms compared to water samples. These data suggest oysters were superior sentinels compared to water, and MSB was a more reliable indicator of wastewater influence on shellfish than fecal coliforms

  1. Use of N stable isotope and microbial analyses to define wastewater influence in Mobile Bay, AL.

    Science.gov (United States)

    Daskin, Joshua H; Calci, Kevin R; Burkhardt, William; Carmichael, Ruth H

    2008-05-01

    We assessed short-term ecological and potential human health effects of wastewater treatment plant (WTP) effluent by measuring delta 15N per thousand and microbial concentrations in oysters and suspended particulate matter (SPM). We also tested male-specific bacteriophage (MSB) as an alternative to fecal coliforms, to assess potential influence of wastewater contamination on shellfish. WTP effluent did not affect oyster growth or survival, but SPM and oysters acquired wastewater-specific delta 15N per thousand. delta 15N values were depleted near the WTP, typical of low-level processed wastewater. Fecal coliform and MSB concentrations were higher in samples taken closest to the WTP, and MSB values were significantly correlated with delta 15N per thousand in oyster tissues. Overall, oysters demonstrated relatively rapid integration and accumulation of wastewater-specific delta 15N per thousand and indicator microorganisms compared to water samples. These data suggest oysters were superior sentinels compared to water, and MSB was a more reliable indicator of wastewater influence on shellfish than fecal coliforms.

  2. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  3. Comparison of Different Stem Cell Mobilization Regimens in AL Amyloidosis Patients.

    Science.gov (United States)

    Lisenko, Katharina; Wuchter, Patrick; Hansberg, Marion; Mangatter, Anja; Benner, Axel; Ho, Anthony D; Goldschmidt, Hartmut; Hegenbart, Ute; Schönland, Stefan

    2017-11-01

    High-dose melphalan (HDM) and autologous blood stem cell transplantation (ABSCT) is an effective treatment for transplantation-eligible patients with systemic light chain (AL) amyloidosis. Whereas most centers use granulocyte colony-stimulating factor (G-CSF) alone for mobilization of peripheral blood stem cells (PBSC), the application of mobilization chemotherapy might offer specific advantages. We retrospectively analyzed 110 patients with AL amyloidosis who underwent PBSC collection. Major eligibility criteria included age CSF (n = 78, 71%); ifosfamide/G-CSF (n = 14, 13%); or other regimens (n = 8, 7%). AL amyloidosis patients with predominant heart involvement and/or status post heart transplantation were mobilized with G-CSF only (n = 10, 9%). PBSC collection was successful in 101 patients (92%) at first attempt. The median number of CD34 + cells was 8.7 (range, 2.1 to 45.5) × 10 6 CD34 + /kg collected in a median of 1 leukapheresis (LP) session. Compared with G-CSF-only mobilization, a chemo-mobilization with CAD/G-CSF or ifosfamide/G-CSF had a positive impact on the number of collected CD34 + cell number/kg per LP (P CSF mobilization (median CTC: grade 3; range, 1 to 4). Toxicity in patients undergoing ifosfamide/G-CSF mobilization was higher than in with those who received G-CSF-only mobilization. HDM and ABSCT were performed in 100 patients. Compared with >6.5 × 10 6 transplanted CD34 + cells/kg, an ABSCT with 1 × 10 9 /L and a reduced platelet count CSF mobilization alone is also safe and effective. Considering the hematopoietic reconstitution and long-term stem cell function, our results provide a rationale to collect and transplant as many as >6.5 × 10 6 CD34 + cells/kg, if feasible with reasonable effort. Copyright © 2017 The American Society for Blood and Marrow Transplantation. Published by Elsevier Inc. All rights reserved.

  4. Dredging Operations Technical Support Program: Engineering Design and Environmental Assessment of Dredged Material Overflow from Hydraulically Filled Hopper Barges in Mobile Bay, Alabama

    Science.gov (United States)

    1990-09-01

    turbid estuarine habitats such as Mobile Bay are very tolerant of moderately high concentrations of suspended sediments and thin layers of sediment...GULF OF MEXIC BAYOU 4M 2CAE SI2LTK Fiur 3. DsrbuinoAedmnTyesi oie a fo IsphordingLT anCLmb190 PART III: DREDGING EQUIPMENT AND OPERATIONAL TECHNIQUES...increase in ambient turbidity was noted. Water samples were collected at surface, middepth, and bottom. The sampling boats proceeded across their

  5. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  6. Use of a real time PCR assay for detection of the ctxA gene of Vibrio cholerae in an environmental survey of Mobile Bay.

    Science.gov (United States)

    Blackstone, George M; Nordstrom, Jessica L; Bowen, Michael D; Meyer, Richard F; Imbro, Paula; DePaola, Angelo

    2007-02-01

    Toxigenic Vibrio cholerae, the etiological agent of cholera, is a natural inhabitant of the marine environment and causes severe diarrheal disease affecting thousands of people each year in developing countries. It is the subject of extensive testing of shrimp produced and exported from these countries. We report the development of a real time PCR (qPCR) assay to detect the gene encoding cholera toxin, ctxA, found in toxigenic V. cholerae strains. This assay was tested against DNA isolated from soil samples collected from diverse locations in the US, a panel of eukaryotic DNA from various sources, and prokaryotic DNA from closely related and unrelated bacterial sources. Only Vibrio strains known to contain ctxA generated a fluorescent signal with the 5' nuclease probe targeting the ctxA gene, thus confirming the specificity of the assay. In addition, the assay was quantitative in pure culture across a six-log dynamic range down to <10 CFU per reaction. To test the robustness of this assay, oysters, aquatic sediments, and seawaters from Mobile Bay, AL, were analyzed by qPCR and traditional culture methods. The assay was applied to overnight alkaline peptone water enrichments of these matrices after boiling the enrichments for 10 min. Toxigenic V. cholerae strains were not detected by either qPCR or conventional methods in the 16 environmental samples examined. A novel exogenous internal amplification control developed by us to prevent false negatives identified the samples that were inhibitory to the PCR. This assay, with the incorporated internal control, provides a highly specific, sensitive, and rapid detection method for the detection of toxigenic strains of V. cholerae.

  7. Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

    International Nuclear Information System (INIS)

    Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo

    2013-01-01

    The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al 2 O 3 /AlGaN/GaN double heterojunction HEMTs with thin Al 2 O 3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n s , shows that TF scattering acts as the main limitation when n s exceeds 2 × 10 12 cm −2 . The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. - Highlights: • The mobility limited by thickness fluctuation (TF) scattering is studied. • Results show that thickness fluctuation scattering is the main limitation. • Two-dimensional electron gas (2DEG) mobility is a function of 2DEG density. • TF scattering is the main limitation when 2DEG density exceeds 2 × 10 12 cm −2

  8. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  9. Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

    International Nuclear Information System (INIS)

    Wang, Kai; Gong, Qian; Zhou, Haifei; Kang, Chuanzhen; Yan, Jinyi; Liu, Qingbo; Wang, Shumin

    2014-01-01

    We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5–2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

  10. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

    2013-01-01

    We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

  11. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  12. High mobility AlGaN/GaN devices for β{sup −}-dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

    2016-05-21

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  13. High mobility AlGaN/GaN devices for β"−-dosimetry

    International Nuclear Information System (INIS)

    Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

    2016-01-01

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β"−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β"−-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β"−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β"−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  14. Increasing rock-avalanche size and mobility in Glacier Bay National Park and Preserve, Alaska detected from 1984 to 2016 Landsat imagery

    Science.gov (United States)

    Coe, Jeffrey A.; Bessette-Kirton, Erin; Geertsema, Marten

    2018-01-01

    In the USA, climate change is expected to have an adverse impact on slope stability in Alaska. However, to date, there has been limited work done in Alaska to assess if changes in slope stability are occurring. To address this issue, we used 30-m Landsat imagery acquired from 1984 to 2016 to establish an inventory of 24 rock avalanches in a 5000-km2 area of Glacier Bay National Park and Preserve in southeast Alaska. A search of available earthquake catalogs revealed that none of the avalanches were triggered by earthquakes. Analyses of rock-avalanche magnitude, mobility, and frequency reveal a cluster of large (areas ranging from 5.5 to 22.2 km2), highly mobile (height/length slopes for failure during periods of warm temperatures.

  15. Analysis of atomic mobility in a Cu38Zr46Ag8Al8 bulk metallic glass

    International Nuclear Information System (INIS)

    Qiao, J.C.; Pelletier, J.M.

    2013-01-01

    Highlights: ► Atomic mobility in Cu 38 Zr 46 Ag 8 Al 8 bulk metallic glass have been investigated by DMA. ► Loss factor is directly connected to the energy lost during application of the stress. ► Structural relaxation and crystallization induces a decrease of the atomic mobility. ► The concentration of quasi-point defects links to atomic mobility in metallic glasses. - Abstract: Atomic mobility in as-cast and annealed Cu 38 Zr 46 Ag 8 Al 8 bulk metallic glass samples is analyzed by performing dynamic mechanical analysis. The loss factor is directly connected to the energy lost during application of the stress. Structural relaxation process and crystallization lead to a decrease of the atomic mobility in the bulk metallic glass. A physical model, based on the concept of quasi point defects is introduced, to describe the atomic mobility. Movements in amorphous materials are correlated. The correlation factor χ reflects the atomic mobility in bulk metallic glasses: structural relaxation and crystallization lead to a decrease of χ, implying the reduction of atomic mobility. The evolution of elastic, visco-elastic and viscoplastic components after structural relaxation and partial crystallization state during the mechanical response has been obtained. Compared with as-cast state, structural relaxation induced an increase of elastic component and a decrease of visco-elastic component in the metallic glass.

  16. Development of an atomic mobility database for liquid phase in multicomponent Al alloys. Focusing on binary systems

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shaoqing; Du, Yong; Zhang, Lijun [Central South Univ., Changsha, Hunan (China). State Key Laboratory of Powder Metallurgy; Liu, Dandan [Central South Univ., Changsha, Hunan (China). State Key Laboratory of Powder Metallurgy; Central South Univ., Changsha, Hunan (China). School of Materials Science and Engineering; Chen, Qing; Engstroem, Anders [Thermo-Calc Software AB, Stockholm (Sweden)

    2013-08-15

    An atomic mobility database for binary liquid phase in multicomponent Al-Cu-Fe-Mg-Mn-Ni-Si-Zn alloys was established based on critically reviewed experimental and theoretical diffusion data by using DICTRA (Diffusion Controlled TRAnsformation) software. The impurity diffusivities of the elements with limited experimental data are obtained by means of the least-squares method and semi-empirical correlations. Comprehensive comparisons between the calculated and measured diffusivities indicate that most of the reported diffusivities can be well reproduced by the currently obtained atomic mobilities. The reliability of this diffusivity database is further validated by comparing the simulated concentration profiles with the measured ones, as well as the measured main inter-diffusion coefficients of liquid Al-Cu-Zn alloys with the extrapolated ones from the present binary atomic mobility database. The approach is of general validity and applicable to establish mobility databases of other liquid alloys. (orig.)

  17. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Jing-Jing, Ma; Cheng, Zhu

    2010-01-01

    The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R Gate , channel resistance R channel , gate current I G,off at V GS = −5 and V DS = 0.1 V, and drain current I D,max at V GS = 2 and V DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Use of Land Use Land Cover Change Mapping Products in Aiding Coastal Habitat Conservation and Restoration Efforts of the Mobile Bay NEP

    Science.gov (United States)

    Spruce, Joseph P.; Swann, Roberta; Smooth, James

    2010-01-01

    The Mobile Bay region has undergone significant land use land cover change (LULC) over the last 35 years, much of which is associated with urbanization. These changes have impacted the region s water quality and wildlife habitat availability. In addition, much of the region is low-lying and close to the Gulf, which makes the region vulnerable to hurricanes, climate change (e.g., sea level rise), and sometimes man-made disasters such as the Deepwater Horizon (DWH) oil spill. Land use land cover change information is needed to help coastal zone managers and planners to understand and mitigate the impacts of environmental change on the region. This presentation discusses selective results of a current NASA-funded project in which Landsat data over a 34-year period (1974-2008) is used to produce, validate, refine, and apply land use land cover change products to aid coastal habitat conservation and restoration needs of the Mobile Bay National Estuary Program (MB NEP). The project employed a user defined classification scheme to compute LULC change mapping products for the entire region, which includes the majority of Mobile and Baldwin counties. Additional LULC change products have been computed for select coastal HUC-12 sub-watersheds adjacent to either Mobile Bay or the Gulf of Mexico, as part of the MB NEP watershed profile assessments. This presentation will include results of additional analyses of LULC change for sub-watersheds that are currently high priority areas, as defined by MB NEP. Such priority sub-watersheds include those that are vulnerable to impacts from the DWH oil spill, as well as sub-watersheds undergoing urbanization. Results demonstrating the nature and permanence of LULC change trends for these higher priority sub-watersheds and results characterizing change for the entire 34-year period and at approximate 10-year intervals across this period will also be presented. Future work will include development of value-added coastal habitat quality

  19. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    International Nuclear Information System (INIS)

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  20. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  1. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  2. Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Manish, E-mail: manishk@skku.edu; Wen, Long; Sahu, Bibhuti B. [Center for Advance Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma-Nano Materials (IPNM), School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-440746 (Korea, Republic of); Han, Jeon Geon [Center for Advance Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma-Nano Materials (IPNM), School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-440746 (Korea, Republic of); Department of Industrial Engineering, Faculty of Engineering, Chiang Mai University, Chiang Mai-50200 (Thailand)

    2015-06-15

    Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 10{sup 11} cm{sup −3}) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 × 10{sup −4} Ω cm along the carrier concentration 5.6 × 10{sup 20} cm{sup −3} is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors.

  3. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Science.gov (United States)

    Grady, R.; Bayram, C.

    2017-07-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

  4. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

    2014-01-01

    The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

  5. Growth optimization and characterization of high mobility two-dimensional electron systems in AlAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, Shivaji

    2009-02-15

    In this work two-dimensional electron systems (2DESs) based on AlAs/AlGaAs heterostructures doped with Si are investigated. The electrons are confined in AlAs quantum wells (QWs) sandwiched between AlGaAs buffers. Analytical calculations and simulations for AlAs QWs are presented in the first chapter. The results show a cross-over width, above which the wide (001)-oriented QWs show double valley occupancy and wide (110)-oriented QWs show single valley occupancy. We solve the Schroedinger equation analytically for anisotropic masses. The solution shows the orientation dependence of the elliptical cyclotron orbit due to the anisotropic mass. We also present an introduction to the Landau level crossings based on g{sup *}m{sup *} product. In the next chapter, we present experimental results for the double-valley (001)-oriented AlAs QWs. We present the different structures of the deep AlAs QWs along with the low temperature magnetotransport data for these QWs. Thereafter, we present the results on shallow AlAs QWs. We achieved a mobility of 4.2 x 10{sup 5} cm{sup 2}/Vs at 330 mK for the deep backside doped AlAs QW. For the shallow QWs, we achieved a mobility of2.3 x 10{sup 5} cm{sup 2}/Vs at 330 mK, for a density of 2.9 x 10{sup 11} cm{sup -2}. From the magneto-transport data, we see evidence of the double-valley occupation for the (001)-oriented AlAs wide QWs. In the next chapter, we present experimental results for the single-valley (110)-oriented AlAs QWs. We deduced the donor binding energy and the doping efficiency for this facet from a doping series of double-sided doped QWs. Thereafter, we designed different structures for the (110)-oriented AlAs QWs, which we present along with their respective low temperature magneto-transport data. We measured one of the double-sided doped AlAs QWs at very high magnetic fields and low temperatures, down to 60 mK. At the end of the chapter, we present a spike feature observed in the magneto-transport data of these QWs. This

  6. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

    2013-11-29

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

  7. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    International Nuclear Information System (INIS)

    Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

    2013-01-01

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

  8. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  9. Arsenic removal from contaminated brackish sea water by sorption onto Al hydroxides and Fe phases mobilized by land-use.

    Science.gov (United States)

    Yu, Changxun; Peltola, Pasi; Nystrand, Miriam I; Virtasalo, Joonas J; Österholm, Peter; Ojala, Antti E K; Hogmalm, Johan K; Åström, Mats E

    2016-01-15

    This study examines the spatial and temporal distribution patterns of arsenic (As) in solid and aqueous materials along the mixing zone of an estuary, located in the south-eastern part of the Bothnian Bay and fed by a creek running through an acid sulfate (AS) soil landscape. The concentrations of As in solution form (<1 kDa) increase steadily from the creek mouth to the outer estuary, suggesting that inflowing seawater, rather than AS soil, is the major As source in the estuary. In sediments at the outer estuary, As was accumulated and diagenetically cycled in the surficial layers, as throughout much of the Bothnian Bay. In contrast, in sediments in the inner estuary, As concentrations and accumulation rates showed systematical peaks at greater depths. These peaks were overall consistent with the temporal trend of past As discharges from the Rönnskär smelter and the accompanied As concentrations in past sea-water of the Bothnian Bay, pointing to a connection between the historical smelter activities and the sediment-bound As in the inner estuary. However, the concentrations and accumulation rates of As peaked at depths where the smelter activities had already declined, but a large increase in the deposition of Al hydroxides and Fe phases occurred in response to intensified land-use in the mid 1960's and early 1970's. This correspondence suggests that, apart from the inflowing As-contaminated seawater, capture by Al hydroxides, Fe hydroxides and Fe-organic complexes is another important factor for As deposition in the inner estuary. After accumulating in the sediment, the solid-phase As was partly remobilized, as reflected by increased pore-water As concentrations, a process favored by As(V) reduction and high concentrations of dissolved organic matter. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  11. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Science.gov (United States)

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  13. Evaluating Ambient Concentrations and Local Emissions of Greenhouse Gases (GHGs) in the San Francisco Bay Area of California Using a Comprehensive Fixed-site and Mobile Monitoring Network

    Science.gov (United States)

    Guha, A.; Bower, J. P.; Martien, P. T.; Randall, S.; Young, A.; Hilken, H.; Stevenson, E.

    2015-12-01

    The Bay Area Air Quality Management District (hence the Air District) is the greater San Francisco Bay metropolitan region's chief air quality regulatory agency. Aligning itself with Executive Order S-3-05, the Air District has set a goal to reduce the region's GHG emissions by 80% below 1990 levels by the year 2050. The Air District's 10-point Climate Action Work Program lays out the agency's priorities, actions and coordination with regional stakeholders. The Program has three core objectives: (1) to develop a technical and monitoring program to document the region's GHG sources and related emissions, (2) to implement a policy and rule-based approach to control and regulate GHG emissions, and finally, (3) to utilize local governance, incentives and partnerships to encourage GHG emissions reductions.As part of the technical program, the Air District has set up a long term, ambient GHG monitoring network at four sites. The first site is located north and upwind of the urban core at Bodega Bay by the Pacific Coast. It mostly receives clean marine inflow and serves as the regional background site. The other three sites are strategically located at regional exit points for Bay Area plumes that presumably contain GHG enhancements from local sources. These stations are at San Martin, located south of the San Jose metropolitan area; at Patterson Pass at the cross section with California's Central Valley; and at Bethel Island at the mouth of the Sacramento-San Joaquin Delta. At all sites, carbon dioxide (CO2) and methane (CH4) are being measured continuously, along with combustion tracer CO and other air pollutants. The GHG measurements are performed with high precision and fast laser instruments (Picarro Inc). In the longer term, the network will allow the Air District to monitor ambient concentrations of GHGs and thus evaluate the effectiveness of its policy, regulation and enforcement efforts. We present data from the sites in their first few months of operation and

  14. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

    Science.gov (United States)

    Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

    1997-10-01

    Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

  15. First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

    International Nuclear Information System (INIS)

    Lordi, V; Aberg, D; Erhart, P; Wu, K J

    2007-01-01

    The development of high resolution, room temperature semiconductor radiation detectors requires the introduction of materials with increased carrier mobility-lifetime (μτ) product, while having a band gap in the 1.4-2.2 eV range. AlSb is a promising material for this application. However, systematic improvements in the material quality are necessary to achieve an adequate μτ product. We are using a combination of simulation and experiment to develop a fundamental understanding of the factors which affect detector material quality. First principles calculations are used to study the microscopic mechanisms of mobility degradation from point defects and to calculate the intrinsic limit of mobility from phonon scattering. We use density functional theory (DFT) to calculate the formation energies of native and impurity point defects, to determine their equilibrium concentrations as a function of temperature and charge state. Perturbation theory via the Born approximation is coupled with Boltzmann transport theory to calculate the contribution toward mobility degradation of each type of point defect, using DFT-computed carrier scattering rates. A comparison is made to measured carrier concentrations and mobilities from AlSb crystals grown in our lab. We find our predictions in good quantitative agreement with experiment, allowing optimized annealing conditions to be deduced. A major result is the determination of oxygen impurity as a severe mobility killer, despite the ability of oxygen to compensation dope AlSb and reduce the net carrier concentration. In this case, increased resistivity is not a good indicator of improved material performance, due to the concomitant sharp reduction in μτ

  16. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

    Science.gov (United States)

    Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

    2014-08-01

    Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

  17. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  18. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    OpenAIRE

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  19. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Directory of Open Access Journals (Sweden)

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  20. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    International Nuclear Information System (INIS)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-01-01

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  1. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  2. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  3. Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

    Science.gov (United States)

    Cörekçi, S; Usanmaz, D; Tekeli, Z; Cakmak, M; Ozçelik, S; Ozbay, E

    2008-02-01

    We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

  4. Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

    International Nuclear Information System (INIS)

    Han Tie-Cheng; Zhao Hong-Dong; Yang Lei; Wang Yang

    2017-01-01

    In this work, we use a 3-nm-thick Al 0.64 In 0.36 N back-barrier layer in In 0.17 Al 0.83 N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al 0.64 In 0.36 N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al 0.64 In 0.36 N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency ( f T ) and power gain cut-off frequency ( f max ) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length. (paper)

  5. Mobilities

    DEFF Research Database (Denmark)

    to social networks, personal identities, and our relationship to the built environment. The omnipresence of mobilities within everyday life, high politics, technology, and tourism (to mention but a few) all point to a key insight harnessed by the ‘mobilities turn’. Namely that mobilities is much more than......The world is on the move. This is a widespread understanding by many inhabitants of contemporary society across the Globe. But what does it actually mean? During over one decade the ‘mobilities turn’ within the social sciences have provided a new set of insights into the repercussions of mobilities...... and environmental degradation. The spaces and territories marked by mobilities as well as the sites marked by the bypassing of such are explored. Moreover, the architectural and technological dimensions to infrastructures and sites of mobilities will be included as well as the issues of power, social exclusion...

  6. Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

    Science.gov (United States)

    Cheng, Zhi-Qun; Hu, Sha; Liu, Jun; Zhang, Qi-Jun

    2011-03-01

    In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

  7. Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

    International Nuclear Information System (INIS)

    Cheng Zhi-Qun; Hu Sha; Liu Jun; Zhang Qi-Jun

    2011-01-01

    In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. (condensed matter: structural, mechanical, and thermal properties)

  8. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    Science.gov (United States)

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  9. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-01-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

  10. Development and status of the AL Mixed Waste Treatment Plan or I love that mobile unit of mine

    International Nuclear Information System (INIS)

    Bounini, L.; Williams, M.; Zygmunt, S.

    1995-01-01

    Nine Department of Energy (DOE) sites reporting to the Albuquerque Office (AL) have mixed waste that is chemically hazardous and radioactive. The hazardous waste regulations require the chemical portion of mixed waste to be to be treated to certain standards. The total volume of low-level mixed waste at the nine sites is equivalent to 7,000 drums, with individual site volumes ranging from 1 gallon of waste at the Pinellas Plant to 4,500 drums at Los Alamos National Laboratory. Nearly all the sites have a diversity of wastes requiring a diversity of treatment processes. Treatment capacity does not exist for much of this waste, and it would be expensive for each site to build the diversity of treatment processes needed to treat its own wastes. DOE-AL assembled a team that developed the AL Mixed Waste Treatment Plan that uses the resources of the nine sites to treat the waste at the sites. Work on the plan started in October 1993, and the plan was finalized in March 1994. The plan uses commercial treatment, treatability studies, and mobile treatment units. The plan specifies treatment technologies that will be built as mobile treatment units to be moved from site to site. Mobile units include bench-top units for very small volumes and treatability studies, drum-size units that treat one drum per day, and skid-size units that handle multiple drum volumes. After the tools needed to treat the wastes were determined, the sites were assigned to provide part of the treatment capacity using their own resources and expertise. The sites are making progress on treatability studies, commercial treatment, and mobile treatment design and fabrication. To date, this is the only plan for treating waste that brings the resources of several DOE sites together to treat mixed waste. It is the only program actively planning to use mobile treatment coordinated between DOE sites

  11. Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

    Science.gov (United States)

    Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

    2018-04-01

    A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

  12. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  13. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    International Nuclear Information System (INIS)

    Grady, R; Bayram, C

    2017-01-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

  14. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    International Nuclear Information System (INIS)

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  15. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  16. Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-01-01

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

  17. Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-09-15

    We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

  18. Daily Mobility and Residential Migrations in the Montréal Metropolitan Region

    Directory of Open Access Journals (Sweden)

    Gilles Sénécal

    2013-06-01

    Full Text Available The purpose of this article is to simultaneously examine two types of mobility by developing a model of metropolitan organization that emphasizes the axis structure of mobility. The model is based on the realities of daily mobility and long-term residential mobility. Origin−Destination study results validated the axis representation of the metropolitan structure. Furthermore, building on data from a telephone survey, we considered the interactions between the two types of mobility along the Center-North axis of Montréal’s Census Metropolitan Area (CMA. The ensuing discussion on various models of metropolitan structure and their relevance today is framed in terms of the axes of mobility defined as territorial practices that are established within the patterns of daily life and are a significant factor in residential location decisions. The study raises broader issues concerning the relevance of drawing on standard models such as Burgess’s concentric zone model, Hoyt’s sector theory, Adam’s directional bias, or recent findings from the literature to understand urban form dynamics in the CMA.

  19. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

    Science.gov (United States)

    Armstrong, Andrew M.; Klein, Brianna; Allerman, Andrew A.; Douglas, Erica A.; Baca, Albert G.; Crawford, Mary H.; Pickrell, Greg W.; Sanchez, Carlos A.

    2018-03-01

    Visible- and solar-blind detection was demonstrated using Al0.45Ga0.55N/Al0.30Ga0.70N and Al0.85Ga0.25N/Al0.70Ga0.30N high electron mobility transistors (HEMTs), respectively. Peak responsivities (S) of 3.9 × 106 A/W in the saturation mode and 6.2 × 104 A/W in the pinch-off mode were observed for the visible-blind Al0.45Ga0.55N/Al0.30Ga0.70N HEMT, and a peak S of 4.9 × 104 A/W was observed for the solar-blind Al0.85Ga0.15N/Al0.70Ga0.30N HEMT in the saturation mode. Spectrally resolved photocurrent investigation indicated that sub-bandgap absorption by defect states was the primary origin of the HEMTs' photoresponse. Defect-mediated responsivity caused slow photocurrent rise and fall times, but electrical pulsing was used to improve the bandwidth at the cost of optical gain. Operating HEMTs in this dynamic mode achieved a 25 Hz bandwidth with S = 2.9 × 105 A/W in accumulation and S = 2.0 × 104 A/W in pinch-off for visible-blind detection and S = 5.1 × 103 A/W for solar-blind detection.

  20. Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-08-01

    This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

  1. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    International Nuclear Information System (INIS)

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  2. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  3. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

    Science.gov (United States)

    Makowski, M S; Kim, S; Gaillard, M; Janes, D; Manfra, M J; Bryan, I; Sitar, Z; Arellano, C; Xie, J; Collazo, R; Ivanisevic, A

    2013-02-18

    AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.

  4. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

    Science.gov (United States)

    Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

    2017-01-01

    We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

  5. Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

    Science.gov (United States)

    Ohi, Shintaro; Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-02-01

    We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate-drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

  6. Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Asubar, Joel T., E-mail: joel@rciqe.hokudai.ac.jp; Yatabe, Zenji; Hashizume, Tamotsu [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo (Japan); Japan Science and Technology Agency (JST), CREST, 102-0075 Tokyo (Japan)

    2014-08-04

    Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I{sub D}-V{sub DS} curves at high V{sub DS} regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of ∼350 K and power dissipation of ∼9 W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.

  7. A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Yang Liyuan; Ai Shan; Chen Yonghe; Cao Mengyi; Zhang Kai; Ma Xiaohua; Hao Yue

    2013-01-01

    Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated by measurements and modeling of device junction temperature under steady-state operation. Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device. The device peak temperature corresponds to the high field region at the drain side of gate edge. The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution. The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures. Furthermore, the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. (semiconductor devices)

  8. AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

    International Nuclear Information System (INIS)

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2007-01-01

    Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

  9. High mobility two-dimensional hole gases in GaAs/AlGaAs heterostructures; Hochbewegliche zweidimensionale Lochsysteme in GaAs/AlGaAs Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Gerl, Christian

    2009-10-14

    This thesis outlines the fabrication of high mobility two-dimensional hole-gases (2DHG) in GaAs/AlGaAs heterostructures with molecular beam epitaxy (MBE) and their characterization with magnetotransport measurements at low temperatures between 4 K and 30 mK. Here the optimization of the carrier mobility is focused. This will be achieved by introducing a novel carbon-filament doping source, with which contaminations of the MBE system and therefore in the grown layers can be reduced and by vary the band structure design to minimize scattering processes. With the help of these actions, hole mobilities above 1 E6 cm{sup 2}/Vs are achievable, what reflects an increase of factor 3 in the (001)- and factor 6.5 in the (110)- oriented transport plane compared to common 2DHGs. Furthermore states of the fractional Quantum Hall Effect can be observed in these 2DHGs, only visible in n-doped 2D systems so fare. Magnetotransport measurements on 2DHGs with aluminum gates reveal a hysteretic behavior of the carrier density with respect to the gate potential which can be attributed to the incorporation mechanisms of carbon atoms as acceptor. Temperature dependent magnetotransport measurements allow the evaluation of effective mass and quantum scattering time as well as the dependence of these parameters from the band structure design. In these experiments an aperiodic behavior of the Shubnikov-de Haas oscillations can be observed in the inverse magnetic field, which is attributed to the position of the fermi energy in the immediate vicinity of crossing regions of the complex Landau fan of 2DHGs. (orig.)

  10. Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Storm, D.F.; Katzer, D.S.; Binari, S.C.; Shanabrook, B.V.; Zhou Lin; Smith, David J.

    2004-01-01

    AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2 /V s to greater than 1450 cm 2 /V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities

  11. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Li, Jia-dong; Cheng, Jun-jie; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Zhang, Jin-cheng; Zhang, Zhi-qiang; Wu, Dong-min

    2014-07-01

    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening.

  12. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Li, Jia-dong; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Wu, Dong-min; Cheng, Jun-jie; Zhang, Jin-cheng; Zhang, Zhi-qiang

    2014-01-01

    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening. (paper)

  13. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    International Nuclear Information System (INIS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-01-01

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

  14. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

    Science.gov (United States)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

    2016-06-01

    Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

  15. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

    Science.gov (United States)

    Song, Weidong; Wang, Rupeng; Wang, Xingfu; Guo, Dexiao; Chen, Hang; Zhu, Yuntao; Liu, Liu; Zhou, Yu; Sun, Qian; Wang, Li; Li, Shuti

    2017-11-29

    Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 10 8 , a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

  16. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

    International Nuclear Information System (INIS)

    Capriotti, M.; Alexewicz, A.; Fleury, C.; Gavagnin, M.; Bethge, O.; Wanzenböck, H. D.; Bertagnolli, E.; Pogany, D.; Strasser, G.; Visalli, D.; Derluyn, J.

    2014-01-01

    Using a generalized extraction method, the fixed charge density N int at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V th of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N int is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V th  = +1 V. Fabrication of a gate stack with Al 2 O 3 as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al 2 O 3 interface

  17. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    Science.gov (United States)

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-05

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  18. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

    Science.gov (United States)

    Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

    2016-11-21

    AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

  19. MOBILE E REALTÀ AUMENTATA AL PALAZZO DUCALE DI URBINO: IL MUSEO È DIGITALE.

    Directory of Open Access Journals (Sweden)

    Ramona Quattrini

    2015-01-01

    Full Text Available In this article we show an interesting approach of exploitation for Palazzo Ducale, the most important museum of Marche Region. The main objective of this project is to transform the museum into a sort of laboratory to experiment new technologies able to give a response to the administrations, who have less and less resources available to enhance their priceless heritage. We propose innovative solutions to create tools, instruments and opportunities for both insiders and common users. The production chain starts from cutting edge survey technology that gives strong data for the conservation; furthermore they are the starting point reach the broader public with augmented reality and mobile application.

  20. Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Yang Ling; Zhou Xiao-Wei; Ma Xiao-Hua; Lv Ling; Zhang Jin-Cheng; Hao Yue; Cao Yan-Rong

    2017-01-01

    The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. (paper)

  1. Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

    International Nuclear Information System (INIS)

    Vasallo, B G; González, T; Mateos, J; Rodilla, H; Moschetti, G; Grahn, J

    2012-01-01

    The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics. (paper)

  2. Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

    Science.gov (United States)

    Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

    2017-11-01

    In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

  3. Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

    Science.gov (United States)

    Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-05-01

    We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

  4. Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

    Science.gov (United States)

    Wang, Zhuo; Samaraweera, R L; Reichl, C; Wegscheider, W; Mani, R G

    2016-12-07

    Electron-heating induced by a tunable, supplementary dc-current (I dc ) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing I dc , yielding negative giant-magnetoresistance at the lowest temperature and highest I dc . A two-term Drude model successfully fits the data at all I dc and T. The results indicate that carrier heating modifies a conductivity correction σ 1 , which undergoes sign reversal from positive to negative with increasing I dc , and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

  5. Effects of urban land-use on largescale stonerollers in the Mobile River Basin, Birmingham, AL

    Science.gov (United States)

    Iwanowicz, Deborah; Black, M.C.; Blazer, Vicki; Zappia, H.; Bryant, Wade L.

    2016-01-01

    During the spring and fall of 2001 and the spring of 2002 a study was conducted to evaluate the health of the largescale stoneroller (Campostoma oligolepis) populations in streams along an urban land-use gradient. Sites were selected from a pool of naturally similar sub-basins (eco-region, basin size, and geology) of the Mobile River basin (MRB), using an index of urban intensity derived from infrastructure, socioeconomic, and land-use data. This urban land-use gradient (ULUG) is a multimetric indicator of urban intensity, ranging from 0 (background) to 100 (intense urbanization). Campostoma sp. have been used previously as indicators of stream health and are common species found in all sites within the MRB. Endpoints used to determine the effects of urban land-use on the largescale stoneroller included total glutathione, histology, hepatic apoptosis, condition factor and external lesions. Liver glutathione levels were positively associated with increasing urban land-use (r2 = 0.94). Histopathological examination determined that some abnormalities and lesions were correlated with the ULUG and generally increased in prevalence or severity with increasing urbanization. Liver macrophage aggregates were positively correlated to the ULUG. The occurrence of nucleosomal ladders (indicating apoptotic cell death) did not correspond with urban intensity in a linear fashion. Apoptosis, as well as prevalence and severity of a myxozoan parasite, appeared to have a hormetic dose–response relationship. The majority of the biomarkers suggested fish health was compromised in areas where the ULUG ≥ 36.

  6. Effects of urban land-use on largescale stonerollers in the Mobile River Basin, Birmingham, AL.

    Science.gov (United States)

    Iwanowicz, D; Black, M C; Blazer, V S; Zappia, H; Bryant, W

    2016-04-01

    During the spring and fall of 2001 and the spring of 2002 a study was conducted to evaluate the health of the largescale stoneroller (Campostoma oligolepis) populations in streams along an urban land-use gradient. Sites were selected from a pool of naturally similar sub-basins (eco-region, basin size, and geology) of the Mobile River basin (MRB), using an index of urban intensity derived from infrastructure, socioeconomic, and land-use data. This urban land-use gradient (ULUG) is a multimetric indicator of urban intensity, ranging from 0 (background) to 100 (intense urbanization). Campostoma sp. have been used previously as indicators of stream health and are common species found in all sites within the MRB. Endpoints used to determine the effects of urban land-use on the largescale stoneroller included total glutathione, histology, hepatic apoptosis, condition factor and external lesions. Liver glutathione levels were positively associated with increasing urban land-use (r(2) = 0.94). Histopathological examination determined that some abnormalities and lesions were correlated with the ULUG and generally increased in prevalence or severity with increasing urbanization. Liver macrophage aggregates were positively correlated to the ULUG. The occurrence of nucleosomal ladders (indicating apoptotic cell death) did not correspond with urban intensity in a linear fashion. Apoptosis, as well as prevalence and severity of a myxozoan parasite, appeared to have a hormetic dose-response relationship. The majority of the biomarkers suggested fish health was compromised in areas where the ULUG ≥ 36.

  7. Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E.; Jimenez, A.

    2008-01-01

    In this work, hydrogenated silicon nitride (SiN x :H y ) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH 4 /N 2 and SiH 4 /NH 3 ) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

    International Nuclear Information System (INIS)

    Fang, J. Y.; Hsu, C. P.; Kang, Y. W.; Fang, K. C.; Kao, W. L.; Yao, D. J.; Chen, C. C.; Li, S. S.; Yeh, J. A.; Wang, Y. L.; Lee, G. Y.; Chyi, J. I.; Hsu, C. H.; Huang, Y. F.; Ren, F.

    2013-01-01

    The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity

  9. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  10. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

    Science.gov (United States)

    Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

    2018-04-01

    In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

  11. Spindle disturbances in human-hamster hybrid (AL) cells induced by mobile communication frequency range signals.

    Science.gov (United States)

    Schrader, Thorsten; Münter, Klaus; Kleine-Ostmann, Thomas; Schmid, Ernst

    2008-12-01

    The production of spindle disturbances in FC2 cells, a human-hamster hybrid (A(L)) cell line, by non-ionizing radiation was studied using an electromagnetic field with a field strength of 90 V/m at a frequency of 835 MHz. Due to the given experimental conditions slide flask cultures were exposed at room temperature in a microTEM (transversal electromagnetic field) cell, which allows optimal experimental conditions for small samples of biological material. Numerical calculations suggest that specific absorption rates of up to 60 mW/kg are reached for maximum field exposure. All exposure field parameters--either measured or calculable--are precisely defined and, for the first time, traceable to the standards of the SI system of physical units. Compared with co-incident negative controls, the results of two independently performed experiments suggest that exposure periods of time from 0.5 to 2 h with an electric field strength of 90 V/m are spindle acting agents as predominately indicated by the appearance of spindle disturbances at the ana- and telophase stages (especially lagging and non-disjunction of single chromosomes) of cell divisions. The spindle disturbances do not change the fraction of mitotic cells with increasing exposure time up to 2 h. Due to the applied experimental conditions an influence of temperature as a confounder parameter for spindle disturbances can be excluded.

  12. Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

    DEFF Research Database (Denmark)

    Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn

    2017-01-01

    Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3D, as a function...

  13. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

    National Research Council Canada - National Science Library

    Fitch, R

    2002-01-01

    Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

  14. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics

    International Nuclear Information System (INIS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

    2016-01-01

    Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) with GeO x /Al 2 O 3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8–20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al 2 O 3 gate stacks are evaluated experimentally. The bulk charges in Al 2 O 3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  10 12 cm −2 at the GeO x /Ge interface and  −2.3  ×  10 12 cm −2 at the Al 2 O 3 /GeO x interface. The electric dipole at the Al 2 O 3 /GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  10 13 cm −2 . The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al 2 O 3 /GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al 2 O 3 /GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement. (paper)

  15. Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Fan, Ren; Zhi-Biao, Hao; Lei, Wang; Lai, Wang; Hong-Tao, Li; Yi, Luo

    2010-01-01

    SiN x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

    2014-01-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm 2 /V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  17. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  18. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  19. Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Krishtopenko, S. S., E-mail: sergey.krishtopenko@mail.ru; Gavrilenko, V. I. [Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105 (Russian Federation); Lobachevsky State University, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Ikonnikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105 (Russian Federation); Orlita, M. [Laboratoire National des Champs Magnétiques Intenses (LNCMI-G), CNRS, 25 rue des Martyrs, B.P. 166, 38042 Grenoble (France); Sadofyev, Yu. G. [P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow 119991, GSP-1, 53 Leninskiy Prospect (Russian Federation); Goiran, M. [Laboratoire National des Champs Magnétiques Intenses (LNCMI-T), CNRS, 143 Avenue de Rangueil, 31400 Toulouse (France); Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, GIS-TERALAB, Universite Montpellier II, 34095 Montpellier (France)

    2015-03-21

    We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels ν. At magnetic fields, corresponding to ν > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k ⋅ p Hamiltonian. In the range of filling factors 3 < ν < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filled Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction.

  20. Mobile eye services: Literature review with special reference to the experience of Al-Basar International Foundation

    Directory of Open Access Journals (Sweden)

    Adel A Rushood

    2010-01-01

    Full Text Available Purpose: To evaluate the concept of quality assured mobile eye services (MES in implementing the vision 2020 initiative. Materials and Methods: Literature review as well as the medical records of Al-Basar International Foundation (BIF on MES. Emphasis was focused on the causes of blindness, objectives, operation, management and the benefits of MES, a critical appraisal of MES, training for MES and the relationship with other organizations and concerned government agencies. Findings: More than 38 countries have been included in this exercise during which more than 620 eye camps have been conducted. More than two million people have benefited from the services provided including medicines and glasses in these eye camps and about 180,000 sight restoring surgeries performed for cataract, glaucoma etc. Conclusion: Quality assured MES are a very important means of tackling the problems of blindness and implementing the vision 2020 initiative. The adoption of this concept by major stake-holders in the prevention of blindness (e.g. WHO, IAPB will bring an additional momentum to the achievement of this noble goal.

  1. Achieving high mobility ZnO : Al at very high growth rates by dc filtered cathodic arc deposition

    International Nuclear Information System (INIS)

    Mendelsberg, R J; Lim, S H N; Wallig, J; Anders, A; Zhu, Y K; Milliron, D J

    2011-01-01

    Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500-1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min -1 while maintaining resistivity below 5 x 10 -4 Ω cm with electron mobility as high as 60 cm 2 V -1 s -1 . (fast track communication)

  2. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  3. Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

    International Nuclear Information System (INIS)

    Yu, Hongbo; Ozturk, Mustafa; Demirel, Pakize; Cakmak, Huseyin; Bolukbas, Basar; Caliskan, Deniz; Ozbay, Ekmel

    2011-01-01

    The Al x In 1−x N barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al 0.83 In 0.17 N barrier exhibits a sheet electron density of 2.0 × 10 13 cm −2 with a high electron mobility of 1540 cm 2 V −1 s −1 . An Al 0.83 In 0.17 N barrier HEMT device with 1 µm gate length provides a current density of 1.0 A mm −1 at V GS = 0 V and an extrinsic transconductance of 242 mS mm −1 , which are remarkably improved compared to that of a conventional Al 0.3 Ga 0.7 N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 °C have been applied to Al 0.83 In 0.17 N and Al 0.3 Ga 0.7 N barrier heterostructures. As expected, the electrical properties of an Al 0.83 In 0.17 N barrier HEMT structure showed less stability than that of an Al 0.3 Ga 0.7 N barrier HEMT to the thermal annealing. The structural properties of Al 0.83 In 0.17 N/GaN also showed more evidence for decomposition than that of the Al 0.3 Ga 0.7 N/GaN structure after 800 °C post-annealing

  4. Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

    International Nuclear Information System (INIS)

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

  5. k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

    OpenAIRE

    Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

    2018-01-01

    Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

  6. Behaviour of Bichromatic Microwave Induced Magnetoresistance Oscillations in the High Mobility GaAs/AlGaAs 2D electron System

    International Nuclear Information System (INIS)

    Gunawardana, Binuka; Liu, Han-Chun; Samaraweera, Rasanga L.; Mani, R.G.; Reichl, C.; Wegscheider, W

    2017-01-01

    Microwave radiation-induced magneto-resistance oscillations are examined under bichromatic excitation for various frequency combinations in order to obtain a better understanding of the lineshape observed in the dual excitation experiment of the high mobility GaAs/AlGaAs 2D electron system. Here, we examine superposition- or lack thereof- in the lineshape observed in the bichromatic experiment, and report a trend observed between the monochromatic and bichromatic responses of the oscillatory diagonal resistance. (paper)

  7. Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

    DEFF Research Database (Denmark)

    Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

  8. Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al{sub 2}O{sub 3} oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Madisetti, Shailesh; Chidambaram, Thenappan; Nagaiah, Padmaja; Tokranov, Vadim; Yakimov, Michael; Oktyabrsky, Serge [College of Nanoscale Science and Engineering, University at Albany - SUNY, 257 Fuller Road, Albany, NY 12203 (United States)

    2013-08-15

    Hall mobility and major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in-situ grown Al{sub 2}O{sub 3} gate oxide are analyzed as a function of sheet hole density, top-barrier thickness and temperature. Mobility dependence on Al{sub 0.8}Ga{sub 0.2}Sb top-barrier thickness shows that the relative contribution of interface-related scattering is as low as {proportional_to}30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top-barrier thickness demonstrates mobility of 980 cm{sup 2}/Vs giving sheet resistance of 4.3 k{Omega}/sq, very close to the minimum QW resistance in the bulk. The mobility-temperature dependences indicate that the interface-related scattering is dominated by remote Coulomb scattering at hole densities <1 x 10{sup 12} cm{sup -2}. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Directory of Open Access Journals (Sweden)

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  10. Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

    Science.gov (United States)

    Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn; Zhang, Yu; Tuller, Harry L.; Chen, Yunzhong; Shklovskii, B. I.; Pryds, Nini

    2017-08-01

    Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3 D , as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3 D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N ≃5 ×1018 cm-3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3 DN , the mobility collapses because scattering happens on n3 D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO, the polar catastrophe model should be revisited.

  11. Mex Bay

    African Journals Online (AJOL)

    user

    2015-02-23

    Feb 23, 2015 ... surveys to assess the vulnerability of the most important physical and eutrophication parameters along. El- Mex Bay coast. As a result of increasing population and industrial development, poorly untreated industrial waste, domestic sewage, shipping industry and agricultural runoff are being released to the.

  12. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    Directory of Open Access Journals (Sweden)

    Xinke Liu

    2017-09-01

    Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  13. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  14. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wan Xiaojia; Wang Xiaoliang; Xiao Hongling; Feng Chun; Jiang Lijuan; Qu Shenqi; Wang Zhanguo; Hou Xun

    2013-01-01

    Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. (semiconductor devices)

  15. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  16. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  17. Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.

    Science.gov (United States)

    Jia, Xiuling; Chen, Dunjun; Bin, Liu; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2016-06-09

    A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(-1) to 2 mg L(-1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(-1) and 1.97 μg L(-1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.

  18. Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

    International Nuclear Information System (INIS)

    So, Hongyun; Senesky, Debbie G.

    2016-01-01

    In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area

  19. Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    So, Hongyun, E-mail: hyso@stanford.edu [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Senesky, Debbie G. [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-01-04

    In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

  20. USGS Tampa Bay Pilot Study

    Science.gov (United States)

    Yates, K.K.; Cronin, T. M.; Crane, M.; Hansen, M.; Nayeghandi, A.; Swarzenski, P.; Edgar, T.; Brooks, G.R.; Suthard, B.; Hine, A.; Locker, S.; Willard, D.A.; Hastings, D.; Flower, B.; Hollander, D.; Larson, R.A.; Smith, K.

    2007-01-01

    Many of the nation's estuaries have been environmentally stressed since the turn of the 20th century and will continue to be impacted in the future. Tampa Bay, one the Gulf of Mexico's largest estuaries, exemplifies the threats that our estuaries face (EPA Report 2001, Tampa Bay Estuary Program-Comprehensive Conservation and Management Plan (TBEP-CCMP)). More than 2 million people live in the Tampa Bay watershed, and the population constitutes to grow. Demand for freshwater resources, conversion of undeveloped areas to resident and industrial uses, increases in storm-water runoff, and increased air pollution from urban and industrial sources are some of the known human activities that impact Tampa Bay. Beginning on 2001, additional anthropogenic modifications began in Tampa Bat including construction of an underwater gas pipeline and a desalinization plant, expansion of existing ports, and increased freshwater withdrawal from three major tributaries to the bay. In January of 2001, the Tampa Bay Estuary Program (TBEP) and its partners identifies a critical need for participation from the U.S. Geological Survey (USGS) in providing multidisciplinary expertise and a regional-scale, integrated science approach to address complex scientific research issue and critical scientific information gaps that are necessary for continued restoration and preservation of Tampa Bay. Tampa Bay stakeholders identified several critical science gaps for which USGS expertise was needed (Yates et al. 2001). These critical science gaps fall under four topical categories (or system components): 1) water and sediment quality, 2) hydrodynamics, 3) geology and geomorphology, and 4) ecosystem structure and function. Scientists and resource managers participating in Tampa Bay studies recognize that it is no longer sufficient to simply examine each of these estuarine system components individually, Rather, the interrelation among system components must be understood to develop conceptual and

  1. Mobilità ubiquitaria con i telefoni cellulari in contesto scolastico formale – un approccio al mobile learning basato su una cultura ecologica

    Directory of Open Access Journals (Sweden)

    Ben Bachmair

    2013-03-01

    Full Text Available Non basta limitarsi ad aggiungere i telefoni cellulari alla lunga lista dei media che sono entrati nel mondo nella scuola per migliorare l’offerta formativa. In quest’ottica, il contributo qui presentato si sofferma sui telefoni cellulari considerandoli come una nuova risorsa culturale emergente in un sistema massmediale connotato da personalizzazione, mobilità e convergenza. Inoltre, un simile approccio che vede i cellulari come risorse culturali, sollecita la scuola ad affrontare un dibattito sulle risorse in chiave ecologica. Per individuare soluzioni di impiego di queste nuove risorse culturali, funzionali ai curricoli scolastici, viene prima di tutto suggerita un’analisi dei telefoni cellulari da una prospettiva teorica, considerandoli in rapporto alle strutture sociali, che si riferiscono all’«agency» degli utenti e alle pratiche culturali di uso dei media e dell’apprendimento. In secondo luogo, attraverso questa analisi triangolare delle strutture, dell’agency e delle pratiche, viene esplorato il complesso mobile (mobile complex al fine di collocare la scuola al suo interno. Successivamente viene descritta un’esperienza di impiego del cellulare per la didattica della matematica in contesto scolastico. Dall’analisi di questo progetto dovrebbero emergere le opportunità offerte dai contesti generati dagli utenti, i quali dovrebbero facilitare l’integrazione dell’apprendimento informale nella scuola. Questa investigazione ha condotto alla messa a punto di linee guida per il mobile learning articolate in tre punti1.

  2. Oxygen Storage Capacity and Oxygen Mobility of Co-Mn-Mg-Al Mixed Oxides and Their Relation in the VOC Oxidation Reaction

    Directory of Open Access Journals (Sweden)

    María Haidy Castaño

    2015-05-01

    Full Text Available Co-Mn-Mg-Al oxides were synthesized using auto-combustion and co-precipitation techniques. Constant ratios were maintained with (Co + Mn + Mg/Al equal to 3.0, (Co + Mn/Mg equal to 1.0 and Co/Mn equal to 0.5. The chemical and structural composition, redox properties, oxygen storage capacity and oxygen mobility were analyzed using X-ray fluorescence (XRF, X-ray diffraction (XRD, Raman spectroscopy, scanning electron microscopy (SEM, temperature-programmed reduction of hydrogen (H2-TPR, oxygen storage capacity (OSC, oxygen storage complete capacity (OSCC and isotopic exchange, respectively. The catalytic behavior of the oxides was evaluated in the total oxidation of a mixture of 250 ppm toluene and 250 ppm 2-propanol. The synthesis methodology affected the crystallite size, redox properties, OSC and oxide oxygen mobility, which determined the catalytic behavior. The co-precipitation method got the most active oxide in the oxidation of the volatile organic compound (VOC mixture because of the improved mobility of oxygen and ability to favor redox processes in the material structure.

  3. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  4. Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

    Directory of Open Access Journals (Sweden)

    W. A. Sasangka

    2016-09-01

    Full Text Available Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs. We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2 at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2. Dislocation movement correlates well with high tensile stress (∼1.6 GPa at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 00 } and 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 01 } slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

  5. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  6. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  7. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    International Nuclear Information System (INIS)

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  8. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    Energy Technology Data Exchange (ETDEWEB)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  9. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

    2015-02-28

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  10. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    International Nuclear Information System (INIS)

    Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki

    2014-01-01

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated

  11. X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H.Y.; Kao, Y.C.; Kim, T.S.

    1990-01-01

    High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

  12. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

    Science.gov (United States)

    Lee, Hee Ho; Bae, Myunghan; Jo, Sung-Hyun; Shin, Jang-Kyoo; Son, Dong Hyeok; Won, Chul-Ho; Jeong, Hyun-Min; Lee, Jung-Hee; Kang, Shin-Won

    2015-07-28

    In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  13. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

    Directory of Open Access Journals (Sweden)

    Hee Ho Lee

    2015-07-01

    Full Text Available In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT-based biosensor for the detection of C-reactive protein (CRP using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  14. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Hiroki, Masanobu, E-mail: hiroki.masanobu@lab.ntt.co.jp; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki [NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi 243-0198 (Japan)

    2014-11-10

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

  15. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  16. Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

    2001-01-01

    Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

  17. Mobilities Mobilities

    Directory of Open Access Journals (Sweden)

    César Pompeyo

    2011-12-01

    Full Text Available Urry, John (2007 Mobilities.Oxford: Polity Press.Urry, John (2007 Mobilities.Oxford: Polity Press.John Urry (1946-, profesor en la Universidad de Lancaster, es un sociólogo de sobra conocido y altamente reputado en el panorama internacional de las ciencias sociales. Su dilatada carrera, aparentemente dispersa y diversificada, ha seguido senderos bastante bien definidos dejando tras de sí un catálogo extenso de obras sociológicas de primer nivel. Sus primeros trabajos se centraban en el campo de la teoría social y la filosofía de las ciencias sociales o de la sociología del poder [...

  18. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Science.gov (United States)

    Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

    2015-02-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  19. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-01-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f_t/f_m_a_x of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f_t/f_m_a_x of 48/60 GHz.

  20. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Science.gov (United States)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-08-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

  1. Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

    International Nuclear Information System (INIS)

    Zhang Guang-Chen; Feng Shi-Wei; Zhou Zhou; Li Jing-Wan; Guo Chun-Sheng

    2011-01-01

    The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip-level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J. [Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)

    2016-08-08

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

  3. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-01-14

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  4. Extraction procedure compared to attenuation model to assess heavy metals mobility in sediments from Sepetiba Bay, Rio de Janeiro; Procedimento de fracionamento comparado a modelo de atenuacao para a avaliacao de mobilidade de metais pesados em sedimentos da Baia de Sepetiba, Rio de Janeiro

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Andreza Portella

    2006-07-01

    Sepetiba bay, located about 60 km west of the metropolitan region of Rio de Janeiro city, has undergone notable development in the last decades, with the establishment of about 400 industrial plants in its basin, basically metallurgical, which release its industrial waste either straight into the bay or through local rivers. The Sepetiba harbor also brought up a lot of industrial investment in that area. This urban and industrial expansion caused several environmental impacts, mainly due to the presence of heavy metals and other potentially toxic substances present in the effluents discharged into the bay. This work aimed to assess heavy metal (Cd, Cu, Ni, Pb e Zn) contamination and mobility in sediments from Sepetiba bay. The acid-volatile sulfides (AVS) and the concentration of simultaneously extracted metals (SIGMA[SEM) were determined in 65 sediment samples from Sepetiba bay, representing the whole area. The results obtained showed that Cd, Cu, Pb and Zn presented higher concentrations in the northeastern area (mainly in the mouth of Guandu and Canal de Sao Francisco rivers), while the highest concentration of Ni were observed in the western region of the bay. The comparison between SEM concentrations with the Canadian Sediment Quality Guidelines (TEL and PEL) indicated that Cd and Zn presented values which may hazard to aquatic organisms (concentration levels above PEL); the elements Cu, Pb and Ni presented concentration levels below PEL, suggesting low probability of toxicological effects to the aquatic organisms. On the other hand, the ratio {sigma}[SEM]/[AVS] was below 1 in the northeastern region, indicating that, in spite of the high concentration of the analyzed metals in this area, they are trapped in the sediment, as sulfides. The total metal concentrations in the sediments were also determined and the same distribution pattern obtained for the SEM were observed, with high concentrations in the northeastern region of the bay, classifying the area as

  5. Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

    Science.gov (United States)

    Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

    2018-09-01

    In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

  6. Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

    International Nuclear Information System (INIS)

    Mishra, Manna Kumari; Sharma, Rajesh K.; Manchanda, Rachna; Bag, Rajesh K.; Muralidharan, Rangarajan; Thakur, Om Prakash

    2014-01-01

    Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness

  7. Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Manna Kumari [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India); Netaji Subhas Institute of Technology, Dwarka, New Delhi-110078 (India); Sharma, Rajesh K., E-mail: rksharma@sspl.drdo.in; Manchanda, Rachna; Bag, Rajesh K.; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India); Thakur, Om Prakash [Netaji Subhas Institute of Technology, Dwarka, New Delhi-110078 (India)

    2014-09-15

    Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.

  8. Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

    2015-08-31

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

  9. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  10. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

    Science.gov (United States)

    Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

    2017-12-01

    We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

  12. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  13. Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Gui-Zhou, Hu; Shou-Gao, Jiang; Li-Yuan, Yang

    2009-01-01

    The current slump of different recipes of SiN x passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH 3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiN x passivated devices. We analyze the pulsed I DS – V DS characteristics of different recipes of SiN x passivation devices for different combinations of gate and drain quiescent biases (V GS0 , V DS0 ) of (0, 0), (−6, 0), (−6, 15) and (0, 15)V. The possible mechanisms are the traps in SiN x passivation capturing the electrons and the surface states at the SiN x /AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

    2017-04-01

    We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

  15. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Takhar, Kuldeep; Meer, Mudassar; Upadhyay, Bhanu B.; Ganguly, Swaroop; Saha, Dipankar

    2017-05-01

    We have demonstrated that a thin layer of Al2O3 grown by wet-oxidation of wet-recessed AlGaN barrier layer in an AlGaN/GaN heterostructure can significantly improve the performance of GaN based high electron mobility transistors (HEMTs). The wet-etching leads to a damage free recession of the gate region and compensates for the decreased gate capacitance and increased gate leakage. The performance improvement is manifested as an increase in the saturation drain current, transconductance, and unity current gain frequency (fT). This is further augmented with a large decrease in the subthreshold current. The performance improvement is primarily ascribed to an increase in the effective velocity in two-dimensional electron gas without sacrificing gate capacitance, which make the wet-recessed gate oxide-HEMTs much more scalable in comparison to their conventional counterpart. The improved scalability leads to an increase in the product of unity current gain frequency and gate length (fT × Lg).

  16. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  17. Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

    Science.gov (United States)

    Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

    2017-08-01

    In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

  18. Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

    Science.gov (United States)

    Kim, Seongjun; Ahn, Kwang-Soon; Ryou, Jae-Hyun; Kim, Hyunsoo

    2017-07-01

    A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current ( I DS,max) of 700 mA/mm at a gate bias voltage ( V GS) of 0 V and a maximum transconductance ( g m,max) of 190 mS/mm at drain-source voltage ( V DS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that I DS,max and g m,max have weak temperature dependence with a power-law relation of T -0.5, owing to suppressed optical phonon scattering. The threshold voltage ( V th) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.

  19. Sediment Characterization in St. Alban's Bay, VT

    Science.gov (United States)

    Nethercutt, S.; Manley, T.; Manley, P.

    2017-12-01

    St. Alban's Bay within Lake Champlain is plagued with harmful algal blooms. With future intensification due to climate change, a multidisciplinary program (BREE-Basin Resilience to Extreme Events) was initiated in 2016. In order to assess the mobilization of harmful nutrients from sediment resuspension events and riverine input, 74 sediment samples were collected in a grid fashion throughout St. Alban's Bay. Sediments were deflocculated and analyzed using a LA920 Horiba laser scattering particle size distribution analyzer to define the frequency of sediment sizes from clay to sand. Gridded surfaces of mean sortable silt percentage, silt percentage, sand percentage, and clay percentage were used to represent the sediment distribution of the region. A plot of diameter versus frequency showed the bimodal nature of some of the sediments, with one peak at about 10 microns diameter (silt) and the second at about 525 microns diameter (sand). The data showed an extremely low percentage of clay relative to that of sand and silt. The highest frequencies of sortable silt, which represents the most easily mobilized particle size, are found in the deepest areas of the bay, suggesting that these regions are where dominant bottom flow occurs. The high occurrence of sortable silt in the St. Alban's Bay does suggest that sediment mobilization, and therefore nutrient mobilization has the potential to occur. These data combined with high-resolution multibeam and hydrodynamic data will allow for future models of water flow and remobilization studies in the future.

  20. Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

    2013-01-01

    V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

    International Nuclear Information System (INIS)

    Cui Lei; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Jiang Li-Juan; Feng Chun; Yin Hai-Bo; Gong Jia-Min; Li Bai-Quan; Wang Zhan-Guo

    2015-01-01

    A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (L_e_f_f) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate. (paper)

  2. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Energy Technology Data Exchange (ETDEWEB)

    Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X. [School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C. [Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553 (Singapore)

    2015-02-23

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  3. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    International Nuclear Information System (INIS)

    Anand, M. J.; Ng, G. I.; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

    2015-01-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON] ) and threshold-voltage shift (ΔV th ) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I DS -V DS ) and drain current (I D ) transients. Different EF was realized with devices of different gate-drain spacing (L gd ) under the same OFF-state stress. Under high-EF (L gd  = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔV th (∼120 mV). However, at low-EF (L gd  = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔV th (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV th . A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I D -transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations

  4. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

    2009-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    International Nuclear Information System (INIS)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-01-01

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing

  6. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    International Nuclear Information System (INIS)

    Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-01-01

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

  7. An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China); Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Zhang, Xiaohui; Yan, Xiaoqin; Liao, Qingliang; Wang, Zengze; Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China)

    2014-11-24

    We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic device as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.

  8. Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Ling, Yang; Gui-Zhou, Hu; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Li-Yuan, Yang; Shou-Gao, Jiang

    2010-01-01

    This paper investigates the impact of electrical degradation and current collapse on different thickness SiN x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN x passivation located in the gate-drain region. As the thickness of SiN x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

    International Nuclear Information System (INIS)

    Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan; Howgate, John; Sharp, Ian D.; Stutzmann, Martin

    2010-01-01

    We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the μGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

  10. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  11. Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

    International Nuclear Information System (INIS)

    Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

    2015-01-01

    Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites

  12. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    International Nuclear Information System (INIS)

    Katsuno, Takashi; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-01-01

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  13. Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

    Science.gov (United States)

    He, Yunlong; Wang, Chong; Mi, Minhan; Zhang, Meng; Zhu, Qing; Zhang, Peng; Wu, Ji; Zhang, Hengshuang; Zheng, Xuefeng; Yang, Ling; Duan, Xiaoling; Ma, Xiaohua; Hao, Yue

    2017-05-01

    A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N2O (or O2) plasma treatment. A comparison of two NC-HEMTs with different plasma treatments has been made. The NC-HEMT with N2O plasma treatment shows an output current of 610 mA/mm and a peak transconductance of 450 mS/mm. The DIBL of the NC-HEMT with N2O plasma treatment is as low as 2 mV/V, and an SS of 70 mV/decade is achieved. The device exhibits an intrinsic current gain cutoff frequency f T of 19 GHz and a maximum oscillation frequency f max of 58 GHz.

  14. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

    Science.gov (United States)

    Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

    2017-12-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

  15. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  16. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Zhang Xiao-Yu; Sun Jian-Dong; Li Xin-Xing; Zhou Yu; Lü Li; Qin Hua; Tan Ren-Bing

    2015-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V g , the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. (paper)

  17. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  18. Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Liu, Z.H.; Ng, G.I.; Cheong, W.C.; Zeng, R.; Bu, J.; Wang, H.; Radhakrishnan, K.; Tan, C.L.

    2007-01-01

    The influence of temperature (- 50 deg. C to + 200 deg. C) was studied on the DC and microwave characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity Si substrate for the first time. The AlGaN/GaN HEMTs exhibited a current-gain cut-off frequency (f T ) of 11.8 GHz and maximum frequency of oscillation (f max ) of 27.5 GHz. When compared to room temperature values, about 4% and 10% increase in f T and f max and 23% and 39.5% decrease in f T and f max were observed when measured at - 50 deg. C and 200 deg. C, respectively. The improvement of I D , g m f T , and f max at - 50 deg. C is due to the enhancement of 2DEG mobility and effective electron velocity. The anomalous drain current reduction in the I-V curves were observed at low voltage region at the temperature ≤ 10 deg. C but disappeared when the temperature reached ≥ 25 deg. C. A positive threshold voltage (V th ) shift was observed from - 50 deg. C to 200 deg. C. The positive shift of V th is due to the occurrence of trapping effects in the devices. The drain leakage current decreases with activation energies of 0.028 eV and 0.068 eV. This decrease of leakage current with the increase of temperature is due to the shallow acceptor initiated impact ionization

  19. Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

    2015-06-22

    A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

  20. Ni/Au-gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia

    2006-01-01

    A δ-doped In 0.45 Al 0.55 As/In 0.53 Ga 0.47 As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2 % are obtained for a 0.65 x 200 μm 2 gate at 300 K. In addition, the measured f T and f max are 49.1 and 61.7 GHz, respectively.

  1. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  2. InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

    International Nuclear Information System (INIS)

    Huang Jie; Guo Tian-Yi; Zhang Hai-Ying; Xu Jing-Bo; Fu Xiao-Jun; Yang Hao; Niu Jie-Bin

    2010-01-01

    A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph (EBL) technology is successfully developed and used to fabricate the 150 nm gate-length In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T-gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics: the transconductance G m , maximum saturation drain-to-source current I DSS , threshold voltage V T , maximum current gain frequency f T derived from h 21 , maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power-gain of metamorphic InGaAs/InAlAs high electron mobility transistors (HEMTs) are 470 mS/mm, 560 mA/mm, −1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications. (cross-disciplinary physics and related areas of science and technology)

  3. Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, Madhya Pradesh (India); Jain, Anubha [Solid State Physics Laboratory, Lucknow Road, New Delhi 110054 (India)

    2015-10-28

    An unambiguous identification of the fine oscillations observed in the low temperature photoluminescence (PL) spectra of AlGaN/GaN based high electron mobility transistor (HEMT) structures is carried out. In literature, such oscillations have been erroneously identified as the sub-levels of 2-dimensional electron gas (2DEG) formed at AlGaN/GaN heterointerface. Here, the origin of these oscillations is probed by performing the angle dependent PL and reflectivity measurements under identical conditions. Contrary to the reports available in literature, we find that the fine oscillations are not related to 2DEG sub-levels. The optical characteristics of these oscillations are mainly governed by an interference phenomenon. In particular, peculiar temperature dependent redshift and excitation intensity dependent blueshift, which have been interpreted as the characteristics of 2DEG sub-levels in HEMT structures by other researchers, are understood by invoking the wavelength and temperature dependence of the refractive index of GaN within the framework of interference phenomenon. The results of other researchers are also consistently explained by considering the fine oscillatory features as the interference oscillations.

  4. Study of SiN{sub x}:H{sub y} passivant layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Redondo-Cubero, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Gago, R. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Jimenez, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Dpto. Electronica, Escuela Politecnica, Universidad de Alcala, 28805 Alcala de Henares (Spain)

    2008-07-01

    In this work, hydrogenated silicon nitride (SiN{sub x}:H{sub y}) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH{sub 4}/N{sub 2} and SiH{sub 4}/NH{sub 3}) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Urban Greening Bay Area

    Science.gov (United States)

    Information about the San Francisco Bay Water Quality Project (SFBWQP) Urban Greening Bay Area, a large-scale effort to re-envision urban landscapes to include green infrastructure (GI) making communities more livable and reducing stormwater runoff.

  6. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Zaidi, Z. H.; Lee, K. B.; Qian, H.; Jiang, S.; Houston, P. A.; Guiney, I.; Wallis, D. J.; Humphreys, C. J.

    2014-01-01

    In this work, we have compared SiN x passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN x passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10 4 –10 5 to 10 7 ) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D it ) is reduced (from 4.86 to 0.90 × 10 12  cm −2 eV −1 ), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN x passivation after full device fabrication results in the reduction of D it and improves the surface related current collapse

  7. Correction: Ryan, J., et al. Application of the Hyperspectral Imager for the Coastal Ocean to Phytoplankton Ecology Studies in Monterey Bay, CA, USA. Remote Sens. 2014, 6, 1007–1025

    Directory of Open Access Journals (Sweden)

    Marcos J. Montes

    2015-10-01

    Full Text Available Studies of phytoplankton ecology in Monterey Bay, CA, USA, using the Hyperspectral Imager for the Coastal Ocean (HICO and other satellite remote sensing and in-situ observations, were presented in [1]. [...

  8. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zaidi, Z. H., E-mail: zaffar.zaidi@sheffield.ac.uk; Lee, K. B.; Qian, H.; Jiang, S.; Houston, P. A. [Department of Electronic and Electrical Engineering, The University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Guiney, I.; Wallis, D. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, The University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-12-28

    In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}–10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90 × 10{sup 12 }cm{sup −2} eV{sup −1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.

  9. A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Bovet, N.; Trier, Felix

    2013-01-01

    The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much...

  10. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  11. Investigation on pseudomorphic InGaAs/InAlAs/InP High Electron Mobility Transistors with regard to cryogenic applications

    International Nuclear Information System (INIS)

    Toennesmann, A.

    2003-03-01

    A wide variety of new data communication applications demand ever-increasing transmission capacities. The InGaAs/InAlAs/InP layer stack based high electron mobility transistor (HEMT) is currently regarded as the most promising active device in communication systems as it has the highest cut-off frequencies of all transistor types. Due to reduced phonon scattering of the charge carriers, the HEMT is expected to exhibit even better noise and high frequency characteristics for operations at cryogenic temperatures, for instance in mixers or oscillators located in satellites or ground based systems with appropriate cooling equipment. This work focuses on the reduction of access resistances and the fabrication of very short gate lengths as the biggest technological challenges realizing highest cut-off frequencies at any temperature. In addition, the reproducibility and robustness of the implemented gate technologies are fundamental criteria for applications. In comparison to other transistor designs, the InAlAs/InGaAs HEMTs are stronger affected by undesirable, partly material dependent, short channel effects like early breakdown, high gate currents, impact ionization, the kink effect, and a shift in the threshold voltage. Measurements at liquid nitrogen temperature on transistors produced in this work provide further insight into the poorly understood interrelationship between these effects. At liquid nitrogen temperature, the cut-off frequency of 180 GHz and the maximum oscillation frequency of 300 GHz of short channel transistors at room temperature increase by 20% and 30%, respectively, while the breakdown voltage remains at high values above 8 V. (orig.)

  12. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  13. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  14. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C. [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States); Wegscheider, W. [Laboratorium fuer Festkoerperphysik, ETH Zurich, 8093 Zurich (Switzerland); Mani, R.G., E-mail: rmani@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States)

    2014-11-15

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R{sub xx} vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported.

  15. Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Yue Tong; Wang Yi; Luo Jun; Mao Wei; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei

    2013-01-01

    In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage V BR is saturated at 1085 V for gate—drain spacing L GD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with L GD = 10 μm. For the length of the drain FP L DF ≤ 2 μm, V BR is almost kept at 1085 V, showing no degradation. When L DF exceeds 2 μm, V BR decreases obviously as L DF increases. Moreover, the larger the L DF , the larger the decrease of V BR . It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the L GD at which V BR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of V BR

  16. pH sensor using AlGaN/GaN high electron mobility transistors with Sc2O3 in the gate region

    International Nuclear Information System (INIS)

    Kang, B. S.; Wang, H. T.; Ren, F.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-01-01

    Ungated AlGaN/GaN high electron mobility transistors (HEMTs) exhibit large changes in current upon exposing the gate region to polar liquids. The polar nature of the electrolyte introduced leds to a change of surface charges, producing a change in surface potential at the semiconductor/liquid interface. The use of Sc 2 O 3 gate dielectric produced superior results to either a native oxide or UV ozone-induced oxide in the gate region. The ungated HEMTs with Sc 2 O 3 in the gate region exhibited a linear change in current between pH 3 and 10 of 37 μA/pH. The HEMT pH sensors show stable operation with a resolution of <0.1 pH over the entire pH range. The results indicate that the HEMTs may have application in monitoring pH solution changes between 7 and 8, the range of interest for testing human blood

  17. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    International Nuclear Information System (INIS)

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C.; Wegscheider, W.; Mani, R.G.

    2014-01-01

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R xx vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported

  18. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

    Science.gov (United States)

    Yang, Jiancheng; Carey, Patrick; Ren, Fan; Wang, Yu-Lin; Good, Michael L.; Jang, Soohwan; Mastro, Michael A.; Pearton, S. J.

    2017-11-01

    We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/ml. The glass slide approach is attractive for inexpensive cartridge-type sensors.

  19. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

    International Nuclear Information System (INIS)

    Yu Xin-Hai; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Xi Xiao-Wen

    2015-01-01

    The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results. (paper)

  20. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-01-01

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

  1. Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.

    Science.gov (United States)

    Khan, Mansoor Ali; Heo, Jun-Woo; Kim, Hyun-Seok; Park, Hyun-Chang

    2014-11-01

    In this work, different gate-head structures have been compared in the context of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). Field-plate (FP) technology self-aligned to the gate electrode leads to various gate-head structures, most likely gamma (γF)-gate, camel (see symbol)-gate, and mushroom-shaped (T)-gate. In-depth comparison of recessed gate-head structures demonstrated that key performance metrics such as transconductance, output current, and breakdown voltage are better with the T-gate head structure. The recessed T-gate with its one arm toward the source side not only reduces the source-access resistance (R(g) +R(gs)), but also minimizes the source-side dispersion and current leakage, resulting in high transconductance (G(m)) and output current (I(DS)). At the same time, the other arm toward the drain-side reduces the drain-side dispersion and tends to distribute electric field peaks uniformly, resulting in high breakdown voltage (V(BR)). DC and RF analysis showed that the recessed T-gate FP-HEMT is a suitable candidate not only for high-frequency operation, but also for high-power applications.

  2. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

    2013-02-01

    This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

  3. Spin dynamics in high-mobility two-dimensional electron systems embedded in GaAs/AlGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Griesbeck, Michael

    2012-11-22

    Since many years there has been great effort to explore the spin dynamics in low-dimensional electron systems embedded in GaAs/AlGaAs based heterostructures for the purpose of quantum computation and spintronics applications. Advances in technology allow for the design of high quality and well-defined two-dimensional electron systems (2DES), which are perfectly suited for the study of the underlying physics that govern the dynamics of the electron spin system. In this work, spin dynamics in high-mobility 2DES is studied by means of the all-optical time-resolved Kerr/Faraday rotation technique. In (001)-grown 2DES, a strong in-plane spin dephasing anisotropy is studied, resulting from the interference of comparable Rashba and Dresselhaus contributions to the spin-orbit field (SOF). The dependence of this anisotropy on parameters like the confinement length of the 2DES, the sample temperature, as well as the electron density is demonstrated. Furthermore, coherent spin dynamics of an ensemble of ballistically moving electrons is studied without and within an applied weak magnetic field perpendicular to the sample plane, which forces the electrons to move on cyclotron orbits. Finally, strongly anisotropic spin dynamics is investigated in symmetric (110)-grown 2DES, using the resonant spin amplification method. Here, extremely long out-of-plane spin dephasing times can be achieved, in consequence of the special symmetry of the Dresselhaus SOF.

  4. Mobile Bay.pdf | ECHO | US EPA

    Science.gov (United States)

    ECHO, Enforcement and Compliance History Online, provides compliance and enforcement information for approximately 800,000 EPA-regulated facilities nationwide. ECHO includes permit, inspection, violation, enforcement action, and penalty information about facilities regulated under the Clean Air Act (CAA) Stationary Source Program, Clean Water Act (CWA) National Pollutant Elimination Discharge System (NPDES), and/or Resource Conservation and Recovery Act (RCRA). Information also is provided on surrounding demographics when available.

  5. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

    International Nuclear Information System (INIS)

    Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

    2017-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

  6. Atomic mobility in liquid and fcc Al-Si-Mg-RE (RE = Ce, Sc) alloys and its application to the simulation of solidification processes in RE-containing A357 alloys

    International Nuclear Information System (INIS)

    Lu, Zhao; Zhang, Lijun

    2017-01-01

    This paper first provides a critical review of experimental and theoretically-predicted diffusivities in both liquid and fcc Al-Si-Mg-RE (RE = Ce, Sc) alloys as-reported by previous researchers. The modified Sutherland equation is then employed to predict self- and impurity diffusivities in Al-Si-Mg-RE melts. The self-diffusivity of metastable fcc Sc is evaluated via the first-principles computed activation energy and semi-empirical relations. Based on the critically-reviewed and presently evaluated diffusivity information, atomic mobility descriptions for liquid and fcc phases in the Al-Si-Mg-RE systems are established by means of the Diffusion-Controlled TRAnsformation (DICTRA) software package. Comprehensive comparisons show that most of the measured and theoretically-predicted diffusivities can be reasonably reproduced by the present atomic mobility descriptions. The atomic mobility descriptions for liquid and fcc Al-Si-Mg-RE alloys are further validated by comparing the model-predicted differential scanning calorimetry curves for RE-containing A357 alloys during solidification against experimental data. Detailed analysis of the curves and microstructures in RE-free and RE-containing A357 alloys indicates that both Ce and Sc can serve as the grain refiner for A357 alloys, and that the grain refinement efficiency of Sc is much higher.

  7. Atomic mobility in liquid and fcc Al-Si-Mg-RE (RE = Ce, Sc) alloys and its application to the simulation of solidification processes in RE-containing A357 alloys

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Zhao; Zhang, Lijun [Central South Univ., Changsha (China). State Key Lab of Powder Metallurgy; Tang, Ying [Thermo-Calc Software AB, Solna (Sweden)

    2017-06-15

    This paper first provides a critical review of experimental and theoretically-predicted diffusivities in both liquid and fcc Al-Si-Mg-RE (RE = Ce, Sc) alloys as-reported by previous researchers. The modified Sutherland equation is then employed to predict self- and impurity diffusivities in Al-Si-Mg-RE melts. The self-diffusivity of metastable fcc Sc is evaluated via the first-principles computed activation energy and semi-empirical relations. Based on the critically-reviewed and presently evaluated diffusivity information, atomic mobility descriptions for liquid and fcc phases in the Al-Si-Mg-RE systems are established by means of the Diffusion-Controlled TRAnsformation (DICTRA) software package. Comprehensive comparisons show that most of the measured and theoretically-predicted diffusivities can be reasonably reproduced by the present atomic mobility descriptions. The atomic mobility descriptions for liquid and fcc Al-Si-Mg-RE alloys are further validated by comparing the model-predicted differential scanning calorimetry curves for RE-containing A357 alloys during solidification against experimental data. Detailed analysis of the curves and microstructures in RE-free and RE-containing A357 alloys indicates that both Ce and Sc can serve as the grain refiner for A357 alloys, and that the grain refinement efficiency of Sc is much higher.

  8. Mobile Marketing

    OpenAIRE

    竹安, 数博; Takeyasu, Kazuhiro

    2005-01-01

    This article deals with one of the modern trends in marketing communication, which is mobile marketing. Towards the end of 2008, several projects which use mobile phones for target marketing communication were launched. Commercial SMS´s are sent on the base of agreement or registration of the consumers on special websites, for example hellomobil.cz. The benefit for the consumers is the bonus which can have more forms - not only sending money to the account, free SMS´s/MMS´s and minutes but al...

  9. mobile_al_mhw.grd

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — NGDC builds and distributes high-resolution, coastal digital elevation models (DEMs) that integrate ocean bathymetry and land topography to support NOAA's mission to...

  10. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  11. Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

    International Nuclear Information System (INIS)

    Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

    2006-01-01

    We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

  12. Archive of Digitized Analog Boomer Seismic Reflection Data Collected from Lake Pontchartrain, Louisiana, to Mobile Bay, Alabama, During Cruises Onboard the R/V ERDA-1, June and August 1992

    Science.gov (United States)

    Sanford, Jordan M.; Harrison, Arnell S.; Wiese, Dana S.; Flocks, James G.

    2008-01-01

    In June and August of 1992, the U.S. Geological Survey (USGS) conducted geophysical surveys to investigate the shallow geologic framework from Lake Pontchartrain, Louisiana, to Mobile Bay, Alabama. This work was conducted onboard the Argonne National Laboratory's R/V ERDA-1 as part of the Mississippi/Alabama Pollution Project. This report is part of a series to digitally archive the legacy analog data collected from the Mississippi-Alabama SHelf (MASH). The MASH data rescue project is a cooperative effort by the USGS and the Minerals Management Service (MMS). A standardized naming convention was established to allow for better management of scanned trackline images within the MASH data rescue project. Each cruise received a unique field activity ID based on the year the data were collected, the first two digits of the survey vessel name, and the number of cruises made (to date) by that vessel that year (i.e. 92ER2 represents the second cruise made by the R/V ERDA-1 in 1992.) The new field activity IDs 92ER2 and 92ER4 presented in this report were originally referred to as ERDA 92-2 and ERDA 92-4 at the USGS in St. Petersburg, FL, and 92010 and 92037 at the USGS in Woods Hole, MA. A table showing the naming convention lineage for cruise IDs in the MASH data rescue series is included as a PDF. This report serves as an archive of high resolution scanned Tagged Image File Format (TIFF) and Graphics Interchange Format (GIF) images of the original boomer paper records, navigation files, trackline maps, Geographic Information System (GIS) files, cruise logs, and formal Federal Geographic Data Committee (FGDC) metadata for cruises 92ER2 and 92ER4. The boomer system uses an acoustic energy source called a plate, which consists of capacitors charged to a high voltage and discharged through a transducer in the water. The source is towed on a sled, at sea level, and when discharged emits a short acoustic pulse, or shot, which propagates through the water and sediment column

  13. eBay.com

    DEFF Research Database (Denmark)

    Engholm, Ida

    2014-01-01

    Celebrated as one of the leading and most valuable brands in the world, eBay has acquired iconic status on par with century-old brands such as Coca-Cola and Disney. The eBay logo is now synonymous with the world’s leading online auction website, and its design is associated with the company...

  14. Al-Qāḍī al-Nu‘mān b. Muḥammad al-Maghribī (m. 363/974. Risālat Dhāt al-Bayān fī l-Radd ‘alā Ibn Qutayba or «The eloquent clarification for the refutation of Ibn Qutayba» (II

    Directory of Open Access Journals (Sweden)

    Hakim, Avraham

    2010-12-01

    Full Text Available Al-Qādī al-Nu,mān b. Muhammad was the most outstanding and prolific Fātimī scholar and the founder of Ismā,īlī jurisprudence. In his epistle “The eloquent clarification for the refutation of Ibn Qutayba”, still in manuscript, al-Nu,mān engaged in a heated atttack on Ibn Qutayba, who had lived a century earlier. The epistle was probably composed in the time of al-Mu´izz at the request of an anonymous tutor of the caliph’s sons. Al-Nu´mān’s purpose was to refute Ibn Qutayba’s assertion in the introduction to his famous Adab al-Kātib, acording to which it was enough for the kuttāb, the civil servants of the state, to memorize a number of simple legal formulas in order to perform their duties, without the need to learn the lengthy dissertations of the fuqahā’ or doctors of law. Al-Qādī al-Nu´mān, who was himself a famous faqīh, dedicates his epistle to proving that in fact without these long dissertations the law could not be properly applied. He refers to each legal formula mentioned by his oponent in Adab al-Kātib and shows how applications of the law should be based on the authority of the Imāms of the Ahl al-Bayt, the family of the Prophet Muhammad. At the same time he refutes various Sunnite legal perspectives on these same issues.

    Al-Qādī al-Nu´mān b. Muhammad es el más destacado y prolífico de los estudiosos fatimíes y el fundador de la jurisprudencia ismā´īlí. En su epístola “La clarificación elocuente para la refutación de Ibn Qutayba”, todavía en manuscrito, al-Nu,mān se lanza a una polémica en contra de Ibn Qutayba, que había vivido un siglo antes. Es probable que la epístola fuera escrita en la época de al- Mu´izz a petición de un tutor anónimo de los hijos del califa. En ella, al-Nu´mān se propone refutar la afirmación de Ibn Qutaybba, incluida en la introducción de su famosa obra Adab al-Kātib, según la cual era

  15. Biscayne Bay Alongshore Epifauna

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Field studies to characterize the alongshore epifauna (shrimp, crabs, echinoderms, and small fishes) along the western shore of southern Biscayne Bay were started in...

  16. Bathymetry in Jobos Bay

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This image represents a 4x4 meter resolution bathymetric surface for Jobos Bay, Puerto Rico (in NAD83 UTM 19 North). The depth values are in meters referenced to the...

  17. Hammond Bay Biological Station

    Data.gov (United States)

    Federal Laboratory Consortium — Hammond Bay Biological Station (HBBS), located near Millersburg, Michigan, is a field station of the USGS Great Lakes Science Center (GLSC). HBBS was established by...

  18. Humboldt Bay Orthoimages

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set consists of 0.5-meter pixel resolution, four band orthoimages covering the Humboldt Bay area. An orthoimage is remotely sensed image data in which...

  19. Mobile marketing for mobile games

    OpenAIRE

    Vu, Giang

    2016-01-01

    Highly developed mobile technology and devices enable the rise of mobile game industry and mobile marketing. Hence mobile marketing for mobile game is an essential key for a mobile game success. Even though there are many articles on marketing for mobile games, there is a need of highly understanding mobile marketing strategies, how to launch a mobile campaign for a mobile game. Besides that, it is essential to understand the relationship between mobile advertising and users behaviours. There...

  20. Antonio Sánchez-Bayón, Sistema de Derecho Comparado y global: de las familias jurídicas mundiales al nuevo Derecho común, Tirant lo Blanch, Valencia, 2012, 161 págs.

    Directory of Open Access Journals (Sweden)

    Natalia del Barrio

    2013-03-01

    Full Text Available Dr. Sánchez-Bayón untersucht in dieser Studie die Notwendigkeit, das Konzept des Vergleichenden Rechts in Zeiten der Globalisierung neu zu überdenken. Die kulturellen, politischen und soziologischen Wechsel müssen an die neue Weltlage angepasst werden. Die juristischen Lösungen müssen verglichen werden, so dass die Spielregeln und der professionelle technische Sprachgebrauch angeglichen werden können; nur so können die Antworten auf die Konsolidierung des gemeinschaftlichen Rechts gefunden werden. Der Autor stellt den formalistischen Positivismus des Staates in Frage.

  1. Innovazione nel mobile learning

    Directory of Open Access Journals (Sweden)

    Immaculada Arnedillo-Sànchez

    2008-01-01

    Full Text Available Descrizione, da una prospettiva europea, dell’innovazione nel settore del mobile learning e l’utilizzabilita’ del mobile learning in contesti educativi. Vengono illustrate i principali progetti europei di m-learning e si esamina le prospettive pedagogiche e teoriche relative al campo.

  2. 75 FR 11837 - Chesapeake Bay Watershed Initiative

    Science.gov (United States)

    2010-03-12

    ... DEPARTMENT OF AGRICULTURE Commodity Credit Corporation Chesapeake Bay Watershed Initiative AGENCY...: Notice of availability of program funds for the Chesapeake Bay Watershed Initiative. SUMMARY: The... through the Chesapeake Bay Watershed Initiative for agricultural producers in the Chesapeake Bay watershed...

  3. 33 CFR 100.124 - Maggie Fischer Memorial Great South Bay Cross Bay Swim, Great South Bay, New York.

    Science.gov (United States)

    2010-07-01

    ... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Maggie Fischer Memorial Great South Bay Cross Bay Swim, Great South Bay, New York. 100.124 Section 100.124 Navigation and Navigable... NAVIGABLE WATERS § 100.124 Maggie Fischer Memorial Great South Bay Cross Bay Swim, Great South Bay, New York...

  4. The building as a power plant. Net plus energy building with e-mobility; Das Gebaeude als Kraftwerk. Netto-Plusenergiegebaeude mit E-Mobilitaet

    Energy Technology Data Exchange (ETDEWEB)

    Fisch, M. Norbert [Technische Univ. Braunschweig (Germany). Inst. fuer Gebaeude- und Solartechnik

    2011-07-01

    Energy designers do not consider the building technology isolated from the architecture. Instead, sustainable, functional and innovative solutions are developed in an integrated process with all persons involved. The user comfort, the overall energy efficiency, the selection of ecologically compatible materials as well as the relation between building and sustainable mobility belong to the context of holistic planning.

  5. Mobile Marketing

    OpenAIRE

    Luengo Cascudo, Alberto

    2010-01-01

    El principal objetivo de este proyecto es explicar y entender la importancia del Mobile Marketing como nueva herramienta de negocio en el Marketing empresarial. Para ello, el primer objetivo es entender los dos factores que para mí son la clave de su importancia: la evolución del entorno tecnológico y el cambio en los hábitos del consumidor. Debido a la novedad de esta nueva forma de Marketing y al hecho de que está en constante definición, es básico exponer de la forma más cla...

  6. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

    Science.gov (United States)

    Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

    2018-03-01

    We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

  7. Bay breeze climatology at two sites along the Chesapeake bay from 1986-2010: Implications for surface ozone.

    Science.gov (United States)

    Stauffer, Ryan M; Thompson, Anne M

    Hourly surface meteorological measurements were coupled with surface ozone (O 3 ) mixing ratio measurements at Hampton, Virginia and Baltimore, Maryland, two sites along the Chesapeake Bay in the Mid-Atlantic United States, to examine the behavior of surface O 3 during bay breeze events and quantify the impact of the bay breeze on local O 3 pollution. Analyses were performed for the months of May through September for the years 1986 to 2010. The years were split into three groups to account for increasingly stringent environmental regulations that reduced regional emissions of nitrogen oxides (NO x ): 1986-1994, 1995-2002, and 2003-2010. Each day in the 25-year record was marked either as a bay breeze day, a non-bay breeze day, or a rainy/cloudy day based on the meteorological data. Mean eight hour (8-h) averaged surface O 3 values during bay breeze events were 3 to 5 parts per billion by volume (ppbv) higher at Hampton and Baltimore than on non-bay breeze days in all year periods. Anomalies from mean surface O 3 were highest in the afternoon at both sites during bay breeze days in the 2003-2010 study period. In conjunction with an overall lowering of baseline O 3 after the 1995-2002 period, the percentage of total exceedances of the Environmental Protection Agency (EPA) 75 ppbv 8-h O 3 standard that occurred on bay breeze days increased at Hampton for 2003-2010, while remaining steady at Baltimore. These results suggest that bay breeze circulations are becoming more important to causing exceedance events at particular sites in the region, and support the hypothesis of Martins et al. (2012) that highly localized meteorology increasingly drives air quality events at Hampton.

  8. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

    Science.gov (United States)

    Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

    2016-12-01

    Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

  9. Chesapeake Bay under stress

    Science.gov (United States)

    According to extensive data obtained over its 13,000 km of shoreline, the Chesapeake Bay has been suffering a major, indeed unprecedented, reduction in submerged vegetation. Chesapeake Bay is alone in experiencing decline in submerged vegetation. Other estuary systems on the east coast of the United States are not so affected. These alarming results were obtained by the synthesis of the findings of numerous individual groups in addition to large consortium projects on the Chesapeake done over the past decade. R. J. Orth and R. A. Moore of the Virginia Institute of Marine Science pointed to the problem of the severe decline of submerged grasses on the Bay and along its tributaries. In a recent report, Orth and Moore note: “The decline, which began in the 1960's and accelerated in the 1970's, has affected all species in all areas. Many major river systems are now totally devoid of any rooted vegetation” (Science, 222, 51-53, 1983).

  10. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  11. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  12. Mobile computing handbook

    CERN Document Server

    Ilyas, Mohammad

    2004-01-01

    INTRODUCTION AND APPLICATIONS OF MOBILE COMPUTING Wearable Computing,A. Smailagic and D.P. Siewiorek Developing Mobile Applications: A Lime Primer,G.P. Picco, A.L. Murphy, and G.-C. Roman Pervasive Application Development: Approaches and Pitfalls,G. Banavar, N. Cohen, and D. Soroker ISAM, Joining Context-Awareness and Mobility to Building Pervasive Applications,I. Augustin, A. Corrêa Yamin, J.L. Victória Barbosa, L. Cavalheiro da Silva, R. Araújo Real, G. Frainer, G.G. Honrich Cavalheiro, and C.F. Resin Geyer Integrating Mobile Wireless Devices into the Computational Grid,T. Phan, L. Huan

  13. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  14. 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

    Science.gov (United States)

    Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

    2017-07-01

    In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

  15. High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

    International Nuclear Information System (INIS)

    Xia, D X; Xu, J B

    2010-01-01

    Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

  16. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    International Nuclear Information System (INIS)

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-01-01

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  17. Materials and device characteristics of pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP high electron mobility transistors

    International Nuclear Information System (INIS)

    Ballingall, J.M.; Ho, P.; Tessmer, G.J.; Martin, P.A.; Yu, T.H.; Choa, P.C.; Smith, P.M.; Duh, K.H.G.

    1990-01-01

    High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic InGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub-0.2 μm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices

  18. Richards Bay effluent pipeline

    CSIR Research Space (South Africa)

    Lord, DA

    1986-07-01

    Full Text Available of major concern identified in the effluent are the large volume of byproduct calcium sulphate (phosphogypsum) which would smother marine life, high concentrations of fluoride highly toxic to marine life, heavy metals, chlorinated organic material... ........................ 9 THE RICHARDS BAY PIPELINE ........................................ 16 Environmental considerations ................................... 16 - Phosphogypsum disposal ................................... 16 - Effects of fluoride on locally occurring...

  19. Bayes and Networks

    NARCIS (Netherlands)

    Gao, F.

    2017-01-01

    The dissertation consists of research in three subjects in two themes—Bayes and networks: The first studies the posterior contraction rates for the Dirichlet-Laplace mixtures in a deconvolution setting (Chapter 1). The second subject regards the statistical inference in preferential attachment

  20. Sustainable development in the Hudson Bay/James Bay bioregion

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    An overview is presented of projects planned for the James Bay/Hudson Bay region, and the expected environmental impacts of these projects. The watershed of James Bay and Hudson Bay covers well over one third of Canada, from southern Alberta to central Ontario to Baffin Island, as well as parts of north Dakota and Minnesota in the U.S.A. Hydroelectric power developments that change the timing and rate of flow of fresh water may cause changes in the nature and duration of ice cover, habitats of marine mammals, fish and migratory birds, currents into and out of Hudson Bay/James Bay, seasonal and annual loads of sediments and nutrients to marine ecosystems, and anadromous fish populations. Hydroelectric projects are proposed for the region by Quebec, Ontario and Manitoba. In January 1992, the Canadian Arctic Resources Committee (CARC), the Environmental Committee of Sanikuluaq, and the Rawson Academy of Arctic Science will launch the Hudson Bay/James Bay Bioregion Program, an independent initiative to apply an ecosystem approach to the region. Two main objectives are to provide a comprehensive assessment of the cumulative impacts of human activities on the marine and freshwater ecosystems of the Hudson Bay/James Bay bioregion, and to foster sustainable development by examining and proposing cooperative processes for decision making among governments, developers, aboriginal peoples and other stakeholders. 1 fig

  1. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-01-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr 4 beam equivalent pressure of 1.86 × 10 −7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics

  2. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  3. Tuning the luminescence color and enhancement of afterglow properties of Sr(4−x−y)CaxBayAl14O25:Eu2+,Dy3+ phosphor by adjusting the composition

    International Nuclear Information System (INIS)

    Luitel, Hom Nath; Watari, Takanori; Chand, Rumi; Torikai, Toshio; Yada, Mitsunori; Mizukami, Hiroshi

    2013-01-01

    Graphical abstract: Excitation and fluorescence emission spectra of three extreme compositions of Ca, Sr and Ba in Sr 4 Al 14 O 25 phosphor (viz. 4CaO·7Al 2 O 3 , 4SrO·7Al 2 O 3 and 4BaO·7Al 2 O 3 ) doped with 4 at% Eu 2+ and 8 at% Dy 3+ (inset shows the digital micrograph of corresponding phosphors). -- Highlights: • Bright phosphor, Sr (4−x−y) Ca x Ba y Al 14 O 25 :Eu 2+ ,Dy 3+ , was synthesized by adjusting the composition. • The solid solubility of Ca and Ba in the Sr 4 Al 14 O 25 host was determined to be 20 and 10 mol%, respectively. • Substituting part of Sr by Ca, the emission color can be well tuned from blue to green. • A white afterglow was observed when 3.2 mol of Sr was substituted by Ca. • The afterglow luminescence was enhanced by 1.5 times by 0.2 mol Ca substitution. -- Abstract: Color point tuning is an important challenge for improving the practical applications of various displays, especially there are very limited white color single hosts that emits in the white spectrum. In this paper, the possibility of color tuning by substituting part of host lattice cation (Sr 2+ ions) by Ca 2+ or Ba 2+ ions in an efficient strontium aluminate phosphor, Sr 4 Al 14 O 25 :Eu 2+ ,Dy 3+ , is reported and found to be very promising for displays. A detail study by replacing part of Sr 2+ with Ca 2+ or Ba 2+ has been investigated. X-ray diffraction study showed that crystal structure of Sr 4 Al 14 O 25 is preserved up to 20 mol of Ca 2+ ion exchange while it is limited to 10 mol of Ba 2+ ions exchange. Substantial shift in the emission band and color were observed by substitution of Sr 2+ by Ca 2+ or Ba 2+ ions. A bluish-white emission and afterglow was observed at higher Ca 2+ ions substitution. Further, partial Ca 2+ substitutions (up to 0.8 mol) resulted in enhanced afterglow of Sr 4 Al 14 O 25 :Eu 2+ ,Dy 3+ phosphor. However, Ba 2+ substitution decreased the fluorescence as well afterglow of the Sr 4 Al 14 O 25 :Eu 2+ ,Dy 3+ phosphor

  4. Nutrient load estimates for Manila Bay, Philippines using population data

    NARCIS (Netherlands)

    Sotto, Lara Patricia A; Beusen, Arthur H W; Villanoy, Cesar L.; Bouwman, Lex F.; Jacinto, Gil S.

    2015-01-01

    A major source of nutrient load to periodically hypoxic Manila Bay is the urban nutrient waste water flow from humans and industries to surface water. In Manila alone, the population density is as high as 19,137 people/km2. A model based on a global point source model by Morée et al. (2013) was used

  5. Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Pang Liang; Kim, Kyekyoon

    2012-01-01

    A bimodal deposition scheme combining radiofrequency magnetron sputtering and plasma enhanced chemical vapour deposition (PECVD) is proposed as a means for improving the performance of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). High-density sputtered-SiO 2 is utilized to reduce the gate leakage current and enhance the breakdown voltage while low-density PECVD-SiO 2 is employed to buffer the sputtering damage and further increase the drain current by engineering the stress-induced-polarization. Thus-fabricated MOSHEMT exhibited a low leakage current of 4.21 × 10 -9 A mm -1 and high breakdown voltage of 634 V for a gate-drain distance of 6 µm, demonstrating the promise of bimodal-SiO 2 deposition scheme for the development of GaN-based MOSHEMTs for high-power application. (paper)

  6. Adsorbate reactivity and thermal mobility from simple modeling of high-resolution core-level spectra: application to O/Al(111)

    International Nuclear Information System (INIS)

    Schouborg, Jakob; Raarup, Merete K; Balling, Peter

    2009-01-01

    A high-resolution core-level spectroscopy investigation of the adsorption of oxygen on Al(111) at variable oxygen exposure demonstrates a low surface reactivity for an intensively cleaned surface. The threshold for oxide formation is as high as ∼200 L (langmuirs), at which point the coverage of the chemisorbed oxygen exceeds half a monolayer. A simple model is presented, using which it is possible to deduce the oxygen coverage from the core-level spectra and determine the initial sticking probability. For our data a value of 0.018 ± 0.004 is obtained. The changes in core-level spectra following low-temperature annealing of low-coverage O/Al(111) reflect the formation of gradually larger islands of oxygen atoms (Ostwald ripening). The island formation is consistent with a random-walk model from which the diffusion barrier can be deduced to be in the range of 0.80-0.90 eV.

  7. Evaluating Bay Area Methane Emission Inventory

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, Marc [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Jeong, Seongeun [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-03-01

    As a regulatory agency, evaluating and improving estimates of methane (CH4) emissions from the San Francisco Bay Area is an area of interest to the Bay Area Air Quality Management District (BAAQMD). Currently, regional, state, and federal agencies generally estimate methane emissions using bottom-up inventory methods that rely on a combination of activity data, emission factors, biogeochemical models and other information. Recent atmospheric top-down measurement estimates of methane emissions for the US as a whole (e.g., Miller et al., 2013) and in California (e.g., Jeong et al., 2013; Peischl et al., 2013) have shown inventories underestimate total methane emissions by ~ 50% in many areas of California, including the SF Bay Area (Fairley and Fischer, 2015). The goal of this research is to provide information to help improve methane emission estimates for the San Francisco Bay Area. The research effort builds upon our previous work that produced methane emission maps for each of the major source sectors as part of the California Greenhouse Gas Emissions Measurement (CALGEM) project (http://calgem.lbl.gov/prior_emission.html; Jeong et al., 2012; Jeong et al., 2013; Jeong et al., 2014). Working with BAAQMD, we evaluate the existing inventory in light of recently published literature and revise the CALGEM CH4 emission maps to provide better specificity for BAAQMD. We also suggest further research that will improve emission estimates. To accomplish the goals, we reviewed the current BAAQMD inventory, and compared its method with those from the state inventory from the California Air Resources Board (CARB), the CALGEM inventory, and recent published literature. We also updated activity data (e.g., livestock statistics) to reflect recent changes and to better represent spatial information. Then, we produced spatially explicit CH4 emission estimates on the 1-km modeling grid used by BAAQMD. We present the detailed activity data, methods and derived emission maps by sector

  8. BCDC Bay Trail Alignment 2009

    Data.gov (United States)

    California Natural Resource Agency — The Bay Trail provides easily accessible recreational opportunities for outdoor enthusiasts, including hikers, joggers, bicyclists and skaters. It also offers a...

  9. Mobile Learning Using Mobile Phones

    Science.gov (United States)

    Vicente, Paula

    2013-01-01

    The participation in mobile learning programs is conditioned by having/using mobile communication technology. Those who do not have or use such technology cannot participate in mobile learning programs. This study evaluates who are the most likely participants of mobile learning programs by examining the demographic profile and mobile phone usage…

  10. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  11. Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.

    Science.gov (United States)

    Tulip, Fahmida S; Eteshola, Edward; Desai, Suchita; Mostafa, Salwa; Roopa, Subramanian; Evans, Boyd; Islam, Syed Kamrul

    2014-06-01

    Monokine induced by interferon gamma (MIG/CXCL9) is used as an immune biomarker for early monitoring of transplant or allograft rejection. This paper demonstrates a direct electrical, label-free detection method of recombinant human MIG with anti-MIG IgG molecules in physiologically relevant buffer environment. The sensor platform used is a biologically modified GaN-based high electron mobility transistor (HEMT) device. Biomolecular recognition capability was provided by using high affinity anti-MIG monoclonal antibody to form molecular affinity interface receptors on short N-hydroxysuccinimide-ester functionalized disulphide (DSP) self-assembled monolayers (SAMs) on the gold sensing gate of the HEMT device. A floating gate configuration has been adopted to eliminate the influences of external gate voltage. Preliminary test results with the proposed chemically treated GaN HEMT biosensor show that MIG can be detected for a wide range of concentration varying from 5 ng/mL to 500 ng/mL.

  12. 77 FR 42653 - United States Navy Restricted Area, SUPSHIP Gulf Coast Detachment Mobile at AUSTAL, USA, Mobile...

    Science.gov (United States)

    2012-07-20

    ... Navy Restricted Area, SUPSHIP Gulf Coast Detachment Mobile at AUSTAL, USA, Mobile, AL; Restricted Area... restricted area established around the AUSTAL, USA shipbuilding facility located in Mobile, Alabama. The...) assumed the duties of administering new construction contracts at AUSTAL USA in Mobile, AL, on October 9...

  13. Monterey Bay ambient noise profiles using underwater gliders

    OpenAIRE

    Chandrayadula, Tarun K.; Miller, Chris W.; Joseph, John

    2013-01-01

    The article of record as published may be found at http://dx.doi.org/10.1121/1.4799131 In 2012, during two separate week-long deployments, underwater gliders outfitted with external hydrophones profiled the upper 100-200 m of the Monterey Bay. The environment contained various noises made by marine mammals, ships, winds, and earthquakes. Unlike hydrophone receivers moored to a fixed location, moving gliders measure noise variability across a wide terrain. However, underwater mobile s...

  14. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang, E-mail: yiqiang-chen@hotmail.com; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei [Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The 5th Electronics Research Institute of the Ministry of Industry and Information Technology, 510610 Guangzhou (China)

    2015-09-28

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  15. Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kyaw, L. M., E-mail: a0048661@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Bera, L. K.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Tripathy, S., E-mail: tripathy-sudhiranjan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Liu, Y.; Bera, M. K.; Singh, S. P.; Chor, E. F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-08-18

    Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

  16. A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

    International Nuclear Information System (INIS)

    Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

    2014-01-01

    A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

  17. Staging Mobilities / Designing Mobilities

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    2015-01-01

    , and systems 'hosting' these multiple and complex mobilities are designed and how they are staging these in terms of their physical layout. By analysing specific cases of ‘mobilities design’ related to the four modes of moving; Walk, Bike, Train, and Car, the book uncover important and until now neglected...... is more than movement between point A and B. It explores how the movement of people, goods, information, and signs influences human understandings of self, other and the built environment. Moving towards a new understanding of the relationship between movement, interaction and environments, the project...

  18. Humic Substances from Manila Bay and Bolinao Bay Sediments

    Directory of Open Access Journals (Sweden)

    Elma Llaguno

    1997-12-01

    Full Text Available The C,H,N composition of sedimentary humic acids (HA extracted from three sites in Manila Bay and six sites in Bolinao Bay yielded H/C atomic ratios of 1.1-1.4 and N/C atomic ratios of 0.09 - 0.16. The Manila Bay HA's had lower H/C and N/C ratios compared to those from Bolinao Bay. The IR spectra showed prominent aliphatic C-H and amide I and II bands. Manila Bay HA's also had less diverse molecular composition based on the GC-MS analysis of the CuO and alkaline permanganate oxidation products of the humic acids.

  19. Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Ng, G. I.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.

    2015-01-01

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In 0.17 Al 0.83 N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W eff ) exhibited a very high I Dmax of 3940 mA/mm and a highest g m of 1417 mS/mm. This dramatic increase of I D and g m in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v e ) of 6.0 × 10 7  cm/s, which is ∼1.89× higher than that of the conventional In 0.17 Al 0.83 N/GaN HEMT (3.17 × 10 7  cm/s). The v e in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v e at 300 K in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v e  = 6 × 10 7  cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In 0.17 Al 0.83 N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications

  20. Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Arulkumaran, S., E-mail: SArulkumaran@pmail.ntu.edu.sg; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L. [Temasek Laboratories@NTU, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553 (Singapore); Ng, G. I., E-mail: eging@ntu.edu.sg [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Shoron, O. F.; Rajan, S. [Electrical and Computer Engineering Department, The Ohio State University, Columbus, Ohio 43210 (United States); Bin Dolmanan, S.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-02-02

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaN HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.

  1. Meteorological, biological, and hydrographic data collected from Katrina Cut Station near Dauphin Island, AL from 04/15/2011 - 12/31/2013 (NODC Accession 0117374)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Abstract: Dauphin Island Sea Lab and the Mobile Bay National Estuary Program have partnered with the Alabama Department of Conservation and Mobile County to provide...

  2. Meteorological, biological, and hydrographic data collected from Bon Secour Station near Dauphin Island, AL from 01/01/2014 - 12/31/2014 (NCEI Accession 0140527)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Abstract: Dauphin Island Sea Lab and the Mobile Bay National Estuary Program have partnered with the Alabama Department of Conservation and Mobile County to provide...

  3. Mobility management in mobile IP

    Science.gov (United States)

    Medidi, Sirisha; Golshani, Forouzan

    2002-07-01

    There is an emerging interest in integrating mobile wireless communication with the Internet based on the Ipv6 technology. Many issues introduced by the mobility of users arise when such an integration is attempted. This paper addresses the problem of mobility management, i.e., that of tracking the current IP addresses of mobile terminals and sustaining active IP connections as mobiles move. The paper presents some architectural and mobility management options for integrating wireless access to the Internet. We then present performance results for Mobile IPv4, route optimization and Mobile IPv6.

  4. Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopy

    CERN Document Server

    Choi, K J; Yoo, H M; Lee, G Y

    1998-01-01

    The transconductance dispersion in AlGaAs/InGaAs PHEMT grown by MBE was interpreted by means of capacitance DLTS technique. When the gate bias was -0.2 V, the transconductance decreased at a very broad frequency range of 5.5 Hz -1.7x10 sup 4 Hz. However, when a positive bias was applied to the gate, the transconductance increased at a low frequency range and then decreased at a high frequency range. In the transconductance dispersion measurement as a function of temperature, the transition frequency shifted to higher frequency region with the increase in temperature. The emission energy for the change in the transition frequency was determined to be 0.394 eV from the temperature dependency of the transition frequency. In the capacitance DLTS measurements, we observed DX-center with thermal activation energy of 0.420 eV and two hole trap-like signals. The DX-center peak decreased as the filling pulse decreased from +0.6 V and disappeared at the bias of -0.1 V. Comparing the activation energy of DX-center in DL...

  5. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Science.gov (United States)

    Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chen, Pei-Chi; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-02-15

    In this study, we report the development of a high sensitivity assay for the detection of cardiac troponin I using electrical double layer gated high field AlGaN/GaN HEMT biosensor. The unique gating mechanism overcomes the drawback of charge screening seen in traditional FET based biosensors, allowing detection of target proteins in physiological solutions without sample processing steps. Troponin I specific antibody and aptamer are used as receptors. The tests carried out using purified protein solution and clinical serum samples depict high sensitivity, specificity and wide dynamic range (0.006-148ng/mL). No additional wash or sample pre-treatment steps are required, which greatly simplifies the biosensor system. The miniaturized HEMT chip is packaged in a polymer substrate and easily integrated with a portable measurement unit, to carry out quantitative troponin I detection in serum samples with < 2µl sample volume in 5min. The integrated prototype biosensor unit demonstrates the potential of the method as a rapid, inexpensive, high sensitivity CVD biomarker assay. The highly simplified protocols and enhanced sensor performance make our biosensor an ideal choice for point of care diagnostics and personal healthcare systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  6. Mobile Election

    OpenAIRE

    Long, Elena; Lovitskii, Vladimir; Thrasher, Michael; Traynor, David

    2009-01-01

    Mobile phones have the potential of fostering political mobilisation. There is a significant political power in mobile technology. Like the Internet, mobile phones facilitate communication and rapid access to information. Compared to the Internet, however, mobile phone diffusion has reached a larger proportion of the population in most countries, and thus the impact of this new medium is conceivably greater. There are now more mobile phones in the UK than there are people (ave...

  7. Mobile Advertising

    OpenAIRE

    Alamuri, Lavanya

    2009-01-01

    The aim of this project was to get an understanding of how companies adopt mobile as an advertising medium. The literature review aided in framing a draft of the factors that affect mobile advertising adoption and possible forms of mobile advertising. Considering the scope of the thesis work, branding strategy, service costs, personalization and privacy and platform were considered to be the factors that could affect the mobile advertising adoption. A few possible forms on mobile device we...

  8. Heavy metal determination by X-rays spectrometry for superficial sediments at Guantanamo bay

    International Nuclear Information System (INIS)

    Gelen, A.; Izquierdo; Corrales, W. Y.; Lopez, N.; Casanova, A. O.; Diaz, O.; Manso, M.V.; D Alessandro, K.; Reyes, E.; Toledo, C.; Ruiz, F.; Ramirez, M.; Beltran, J.; Martin, A.

    2007-01-01

    Twelve surface samples of the Guantanamo Bay (Cuba) were collected and analysed by X-Rays Spectrometry. Twenty one elements (Si, Ca, K, Na, P, S, Cl, Al, Fe, Mg, Ti, Mn, C, O, Cr, Cu, Ni, Co, Pb, V and Zn) have been determined. The distribution of the metals is associated with the wastewater from anthropogenic origin that receives the bay, mainly by fluvial currents. Multivariate statistical were used for the analysis of the results. Finally the results analysed were compared with the analysis performed by Engineering Centre for Environmental Management of Bays and Coasts (Cimab) using Inductively Coupled Plasma Emission (ICP) for some elements such as: Cr, Cu, Fe, Ni, Pb, V and Zn. The results show the Guantanamo Bay is less polluted than others Cuban Bays. (Author)

  9. Spatial and temporal characterizations of water quality in Kuwait Bay.

    Science.gov (United States)

    Al-Mutairi, N; Abahussain, A; El-Battay, A

    2014-06-15

    The spatial and temporal patterns of water quality in Kuwait Bay have been investigated using data from six stations between 2009 and 2011. The results showed that most of water quality parameters such as phosphorus (PO4), nitrate (NO3), dissolved oxygen (DO), and Total Suspended Solids (TSS) fluctuated over time and space. Based on Water Quality Index (WQI) data, six stations were significantly clustered into two main classes using cluster analysis, one group located in western side of the Bay, and other in eastern side. Three principal components are responsible for water quality variations in the Bay. The first component included DO and pH. The second included PO4, TSS and NO3, and the last component contained seawater temperature and turbidity. The spatial and temporal patterns of water quality in Kuwait Bay are mainly controlled by seasonal variations and discharges from point sources of pollution along Kuwait Bay's coast as well as from Shatt Al-Arab River. Copyright © 2014 Elsevier Ltd. All rights reserved.

  10. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} as potential gate dielectrics for GaN/Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Partida-Manzanera, T., E-mail: sgtparti@liv.ac.uk [Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH (United Kingdom); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634 (Singapore); Roberts, J. W.; Sedghi, N.; Potter, R. J. [Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH (United Kingdom); Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634 (Singapore)

    2016-01-14

    This paper describes a method to optimally combine wide band gap Al{sub 2}O{sub 3} with high dielectric constant (high-κ) Ta{sub 2}O{sub 5} for gate dielectric applications. (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta{sub 2}O{sub 5} molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al{sub 2}O{sub 3} to 4.6 eV for pure Ta{sub 2}O{sub 5}. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al{sub 2}O{sub 3} up to 25.6 for Ta{sub 2}O{sub 5}. The effect of post-deposition annealing in N{sub 2} at 600 °C on the interfacial properties of undoped Al{sub 2}O{sub 3} and Ta-doped (Ta{sub 2}O{sub 5}){sub 0.12}(Al{sub 2}O{sub 3}){sub 0.88} films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al{sub 2}O{sub 3}/GaN-HEMT and (Ta{sub 2}O{sub 5}){sub 0.16}(Al{sub 2}O{sub 3}){sub 0.84}/GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al{sub 2}O{sub 3} can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

  11. 78 FR 77359 - Eighth Coast Guard District Annual Safety Zones; New Year's Eve Celebration/City of Mobile...

    Science.gov (United States)

    2013-12-23

    ...-AA00 Eighth Coast Guard District Annual Safety Zones; New Year's Eve Celebration/City of Mobile; Mobile Channel; Mobile, AL AGENCY: Coast Guard, DHS. ACTION: Temporary final rule. SUMMARY: The Coast Guard will enforce the City of Mobile New Year's Eve Celebration safety zone in the Mobile Channel, Mobile, AL from...

  12. Mobilities Design

    DEFF Research Database (Denmark)

    Lanng, Ditte Bendix; Wind, Simon; Jensen, Ole B.

    2017-01-01

    Mobilities comprise a large part of our world and everyday lives, and the mobilities spaces in which we travel are ubiquitous. Yet, ordinary mobilities spaces – such as parking lots, pedestrian tunnels, and road lay-bys – tend to be criticized as typologies that lack consideration for the people...... who use them and for their wider social, aesthetic, cultural, and ecological agency in the city. This is clearly not an unambiguous characterization. But from it follows an urgency to re-examine unheeded mobilities spaces and extend demands of their agency beyond standards of technical efficiency....... This article draws on the recent “mobilities turn” in social science to support such re-examination of mobilities spaces. In social-scientific mobilities research, mobilities are considered the departure point for understanding the socio-material world in which we live. Mobilities are regarded as far more than...

  13. Bay of Fundy

    Science.gov (United States)

    2006-01-01

    The highest tides on Earth occur in the Minas Basin, the eastern extremity of the Bay of Fundy, Nova Scotia, Canada, where the tide range can reach 16 meters when the various factors affecting the tides are in phase. The primary cause of the immense tides of Fundy is a resonance of the Bay of Fundy-Gulf of Maine system. The system is effectively bounded at this outer end by the edge of the continental shelf with its approximately 40:1 increase in depth. The system has a natural period of approximately 13 hours, which is close to the 12h25m period of the dominant lunar tide of the Atlantic Ocean. Like a father pushing his daughter on a swing, the gentle Atlantic tidal pulse pushes the waters of the Bay of Fundy-Gulf of Maine basin at nearly the optimum frequency to cause a large to-and-fro oscillation. The greatest slosh occurs at the head (northeast end) of the system. The high tide image (top) was acquired April 20, 2001, and the low tide image (bottom) was acquired September 30, 2002. The images cover an area of 16.5 by 21 km, and are centered near 64 degrees west longitude and 45.5 degrees north latitude. With its 14 spectral bands from the visible to the thermal infrared wavelength region, and its high spatial resolution of 15 to 90 meters (about 50 to 300 feet), ASTER images Earth to map and monitor the changing surface of our planet. ASTER is one of five Earth-observing instruments launched December 18, 1999, on NASA's Terra satellite. The instrument was built by Japan's Ministry of Economy, Trade and Industry. A joint U.S./Japan science team is responsible for validation and calibration of the instrument and the data products. The broad spectral coverage and high spectral resolution of ASTER provides scientists in numerous disciplines with critical information for surface mapping, and monitoring of dynamic conditions and temporal change. Example applications are: monitoring glacial advances and retreats; monitoring potentially active volcanoes; identifying

  14. Mobile Workforce, Mobile Technology, Mobile Threats

    International Nuclear Information System (INIS)

    Garcia, J.

    2015-01-01

    Mobile technologies' introduction into the world of safeguards business processes such as inspection creates tremendous opportunity for novel approaches and could result in a number of improvements to such processes. Mobile applications are certainly the wave of the future. The success of the application ecosystems has shown that users want full fidelity, highly-usable, simple purpose applications with simple installation, quick responses and, of course, access to network resources at all times. But the counterpart to opportunity is risk, and the widespread adoption of mobile technologies requires a deep understanding of the threats and vulnerabilities inherent in mobile technologies. Modern mobile devices can be characterized as small computers. As such, the threats against computing infrastructure apply to mobile devices. Meanwhile, the attributes of mobile technology that make it such an obvious benefit over traditional computing platforms all have elements of risk: pervasive, always-on networking; diverse ecosystems; lack of centralized control; constantly shifting technological foundations; intense competition among competitors in the marketplace; the scale of the installation base (from millions to billions); and many more. This paper will explore the diverse and massive environment of mobile, the number of attackers and vast opportunities for compromise. The paper will explain how mobile devices prove valuable targets to both advanced and persistent attackers as well as less-skilled casual hackers. Organized crime, national intelligence agencies, corporate espionage are all part of the landscape. (author)

  15. OPORTUNIDADES DE MEJORAMIENTO DE UNA LÍNEA DE ATENCIÓN AL CLIENTE DE TELEFONÍA MÓVIL DESDE LA PERSPECTIVA DEL ASESOR OPPORTUNITIES FOR IMPROVEMENT, FROM STANDPOINT WORKERS, IN A CUSTOMER SERVICE LINE FOR MOBILE TELEPHONY

    Directory of Open Access Journals (Sweden)

    Jorge Iván Pérez Rave

    2010-04-01

    Full Text Available Este artículo resalta la importancia de considerar la voz de los colaboradores nivel operativo para identificar direcciones de mejoramiento empresarial. Para ello se socializa el despliegue de una metodología para identificar, desde la perspectiva del asesor, oportunidades de mejora de la calidad y de la productividad en una línea de atención al cliente para servicios de telefonía móvil. La metodología es de carácter exploratorio e integra elementos de: análisis multivariado, estadística descriptiva e investigación cualitativa. Como resultado se identifican variedad de oportunidades, básicamente en función de: estandarización de procedimientos, divulgación de información, capacitación y entrenamiento, satisfacción de los asesores, estado de las herramientas y aplicativos computacionales.This article shows the importance of consulting the workers opinions for the improvement of the companies. The used methodology is socialized to identify, from standpoint workers, opportunities to improve the quality and the productivity of a customer service line for mobile telephony. The methodology is exploratory and contains elements of: multivariate analysis, descriptive statistics and qualitative research. The project gives opportunities for improvement in: standardization of procedures, information dissemination, training, job satisfaction and computational tools.

  16. Influence of environmental settings on the prevalence of Trichodesmium spp. in the Bay of Bengal

    Digital Repository Service at National Institute of Oceanography (India)

    Hegde, S.; Anil, A.C.; Patil, J.S.; Mitbavkar, S.; Venkat, K.; Gopalakrishna, V.V.

    ) Influence of physical pro- cesses and freshwater discharge on the seasonality of phytoplankton regime in the Bay of Bengal. Cont Shelf Res 20:313–330 Gordon AL (2001) Interocean exchange. In: Sidler G, Church J, Gould J (eds) Ocean circulation and climate...: acanil@nio.org Influence of environmental settings on the prevalence of Trichodesmium spp. in the Bay of Bengal Sahana Hegde, Arga Chandrashekar Anil*, Jagadish S. Patil, Smita Mitbavkar, Venkat Krishnamurthy, Vissa V. Gopalakrishna National Institute...

  17. Trace metal contamination in mangrove sediments, Guanabara Bay, Rio de Janeiro, Brazil

    OpenAIRE

    Farias,Cassia O.; Hamacher,Claudia; Wagener,Angela de Luca R.; Campos,Reinaldo C. de; Godoy,José M.

    2007-01-01

    The Guanabara Bay in Rio de Janeiro has undergone profound alterations of its natural environmental conditions. Metal concentration increase in sediments has been reported to be among these alterations. Trace-metal contamination and availability were studied in sediments of 3 mangrove areas of the bay. Cd, Zn, Pb, Ni, Cu and Al concentrations were determined in segments of sediment cores, after treatment with 1 mol L-1 HCl and with concentrated HNO3. Fe and Mn were determined in the leach wit...

  18. Mobilities Design

    DEFF Research Database (Denmark)

    Jensen, Ole B.; Lanng, Ditte Bendix

    Contemporary society is marked and defined by the ways in which mobile goods, bodies, vehicles, objects, and data are organized, moved and staged. On the background of the ‘mobilities turn’ (e.g. Cresswell 2006, Urry 2007) this book articulates a new and emerging research field, namely that of ‘m......Contemporary society is marked and defined by the ways in which mobile goods, bodies, vehicles, objects, and data are organized, moved and staged. On the background of the ‘mobilities turn’ (e.g. Cresswell 2006, Urry 2007) this book articulates a new and emerging research field, namely...... that of ‘mobilities design’. The book revolves around the following research question: How are design decisions and interventions staging mobilities? It builds upon the Staging Mobilities model (Jensen 2013) in an explorative inquiry into the problems and potentials of the design of mobilities. The exchange value...

  19. Mobile economy

    OpenAIRE

    Turowski, Klaus

    2004-01-01

    Mobile economy : Transaktionen, Prozesse, Anwendungen und Dienste ; 4. Workshop Mobile Commerce, 02.-03. Februar 2004, Univ. Augsburg / K. Turowski ... (Hrsg.). - Bonn : Ges. für Informatik, 2004. - 189 S. : Ill., graph. Darst. - (GI-Edition : Proceedings ; 42)

  20. Lavaca Bay 1985-1987

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Samples were collected from October 15, 1985 through June 12, 1987 in emergent marsh and non-vegetated habitats throughout the Lavaca Bay system to characterize...

  1. FL BAY SPECTROUT-DIET

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Juvenile spotted seatrout and other sportfish are being monitored annually over a 6-mo period in Florida Bay to assess their abundance over time relative to...

  2. Mobile marketing

    OpenAIRE

    Gause, Matěj

    2012-01-01

    The goal of bachelor's thesis on the theme "Mobile marketing" is to outline its development and why is this new phenomen so important for all modern companies around the world. The work is not about simple description of mobile marketing media but it vividly informs about the latest trends and news from the world of mobile apps and games. It presents the most successful mobile apps which registered more than billion downloads and from their unique characteristics it unveils great potential of...

  3. Mobile marketing

    OpenAIRE

    KLEČKOVÁ, Zuzana

    2013-01-01

    The main aim of this thesis was to provide a comprehensive overview of the mobile marketing and analyze selected campaigns of Czech mobile marketing in comparison to world successful campaigns. The research contained studying of available literature about the theme to gain general knowledge about the issue. The theoretical part of the thesis contains predominantly various definitions of mobile marketing and its tools, advantages of these tools and some information about Mobile Marketing Assoc...

  4. Recent results from Daya Bay

    Directory of Open Access Journals (Sweden)

    Chua Ming-chung

    2016-01-01

    Full Text Available Utilizing powerful nuclear reactors as antineutrino sources, high mountains to provide ample shielding from cosmic rays in the vicinity, and functionally identical detectors with large target volume for near-far relative measurement, the Daya Bay Reactor Neutrino Experiment has achieved unprecedented precision in measuring the neutrino mixing angle θ13 and the neutrino mass squared difference |Δm2ee|. I will report the latest Daya Bay results on neutrino oscillations and light sterile neutrino search.

  5. Staging Mobilities

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    and lived as people are “staging themselves” (from below). Staging mobilities is a dynamic process between “being staged” (for example, being stopped at traffic lights) and the “mobile staging” of interacting individuals (negotiating a passage on the pavement). Staging Mobilities is about the fact...

  6. Subversive Mobilities

    DEFF Research Database (Denmark)

    Thelle, Mikkel

    2013-01-01

    The article approaches mobility through a cultural history of urban conflict. Using a case of “The Copenhagen Trouble,“ a series of riots in the Danish capital around 1900, a space of subversive mobilities is delineated. These turn-of-the-century riots points to a new pattern of mobile gathering...

  7. ALS Association

    Science.gov (United States)

    ... toward a world without ALS! Walk to Defeat ALS® Walk to Defeat ALS® draws people of all ... We need your help. I Will Advocate National ALS Registry The National ALS Registry is a congressionally ...

  8. Familial ALS

    Science.gov (United States)

    Boylan, Kevin

    2015-01-01

    Synopsis Genes linked to ALS susceptibility are being identified at an increasing rate owing to advances in molecular genetic technology. Genetic mechanisms in ALS pathogenesis appear to exert major effects in ~10% of patients, but genetic factors at some level may be important components of disease risk in most ALS patients. Identification of gene variants associated with ALS has informed concepts of the pathogenesis of ALS, aided the identification of therapeutic targets, facilitated research to develop new ALS biomarkers, and supported the establishment of clinical diagnostic tests for ALS-linked genes. Translation of this knowledge to ALS therapy development is ongoing. PMID:26515623

  9. Mobile Probes in Mobile Learning

    DEFF Research Database (Denmark)

    Ørngreen, Rikke; Blomhøj, Ulla; Duvaa, Uffe

    In this paper experiences from using mobile probes in educational design of a mobile learning application is presented. The probing process stems from the cultural probe method, and was influenced by qualitative interview and inquiry approaches. In the project, the mobile phone was not only acting...... as an agent for acquiring empirical data (as the situation in hitherto mobile probe settings) but was also the technological medium for which data should say something about (mobile learning). Consequently, not only the content of the data but also the ways in which data was delivered and handled, provided...... a valuable dimension for investigating mobile use. The data was collected at the same time as design activities took place and the collective data was analysed based on user experience goals and cognitive processes from interaction design and mobile learning. The mobile probe increased the knowledge base...

  10. Mobile Semiotics

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    2013-01-01

    This chapter aims to understand the mobile condition of contemporary life with a particular view to the signifying dimension of the environment and its ‘readability’. The chapter explores the potentials of semiotics and its relationship to the new mobilities literature. What takes place...... is a ‘mobile sense making’ where signs and materially situated meanings connect to the moving human body and thus create particular challenges and complexities of making sense of the world. The chapter includes notions of mobility systems and socio-technical networks in order to show how a ‘semiotic layer’ may...... work to afford or restrict mobile practices....

  11. Mobile Lexicography

    DEFF Research Database (Denmark)

    Køhler Simonsen, Henrik

    2014-01-01

    Users are already mobile, but the question is to which extent knowledge-based dictionary apps are designed for the mobile user situation. The objective of this article is to analyse the characteristics of the mobile user situation and to look further into the stationary user situation and the mob......Users are already mobile, but the question is to which extent knowledge-based dictionary apps are designed for the mobile user situation. The objective of this article is to analyse the characteristics of the mobile user situation and to look further into the stationary user situation...... and the mobile user situation. The analysis is based on an empirical survey involving ten medical doctors and a monolingual app designed to support cognitive lexicographic functions, cf. (Tarp 2006:61-64). In test A the doctors looked up five medical terms while sitting down at a desk and in test B the doctors...

  12. Mobility Divides

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    Contemporary mobilities are cultural and social manifestations, and the mobile practices in the everyday life of billions of humans are re-configuring senses of place, self, other and relationships to the built environment. The way ‘mobile situations’ are staged in designed and built environments......’ in the everyday life and cast light on how design and ‘materialities of mobilites’ are creating differential mobilities across societies, social networks, and communities of practices.......Contemporary mobilities are cultural and social manifestations, and the mobile practices in the everyday life of billions of humans are re-configuring senses of place, self, other and relationships to the built environment. The way ‘mobile situations’ are staged in designed and built environments...

  13. Mobile Semiotics - signs and mobilities

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    a potential for mobilities studies if the awareness of seeing the environment as a semiotic layer and system can be sensitized to the insights of the ‘mobilities turn’. Empirically the paper tentatively explores the usefulness of a mobile semiotics approach to cases such as street signage, airport design...

  14. mobile_al_navd88.grd

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — NGDC builds and distributes high-resolution, coastal digital elevation models (DEMs) that integrate ocean bathymetry and land topography to support NOAA's mission to...

  15. Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

    International Nuclear Information System (INIS)

    Hsu, M K; Chiu, S Y; Wu, C H; Lour, W S; Guo, D F

    2008-01-01

    Pseudomorphic Al 0.22 Ga 0.78 As/In 0.16 Ga 0.84 As/Al 0.22 Ga 0.78 As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate–drain breakdown voltages defined at a 1 mA mm −1 reverse gate–drain current density were −15.3, −19.1 and −26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current–voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as −0.97 mV K −1 for FPG devices. According to the 2.4 GHz load–pull power measurement at V DS = 3.0 V and V GS = −0.5 V, the saturated output power (P OUT ), power gain (G P ) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a V DS of 10 V, the saturated power density is more than 600 mW mm −1

  16. Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

    Science.gov (United States)

    Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

    2008-12-01

    Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

  17. Composition and temporal patterns of larval fish communities in Chesapeake and Delaware Bays

    Directory of Open Access Journals (Sweden)

    Filipe Ribeiro

    2015-11-01

    Full Text Available Comparing larval fish assemblages in different estuaries provides insights about the coastal distribution of larval populations, larval transport, and adult spawning locations (Ribeiro et al. 2015. We simultaneously compared the larval fish assemblages entering two Middle Atlantic Bight (MAB estuaries (Delaware Bay and Chesapeake Bay, USA through weekly sampling from 2007 to 2009. In total, 43 taxa (32 families and 36 taxa (24 families were collected in Delaware and Chesapeake Bays, respectively. Mean taxonomic diversity, mean richness, and evenness were generally lower in Delaware Bay. Communities of both bays were dominated by Anchoa spp., Gobiosoma spp., Micropogonias undulatus, and Brevoortia tyrannus; Paralichthys spp. was more abundant in Delaware Bay and Microgobius thalassinus was more abundant in Chesapeake Bay. Inter-annual variation in the larval fish communities was low at both sites, with a relatively consistent composition across years, but strong seasonal (intra-annual variation in species composition occurred in both bays. Two groups were identified in Chesapeake Bay: a ‘winter’ group dominated by shelf-spawned species (e.g. M. undulatus and a ‘summer’ group comprising obligate estuarine species and coastal species (e.g. Gobiosoma spp. and Cynoscion regalis, respectively. In Delaware Bay, 4 groups were identified: a ‘summer’ group of mainly obligate estuarine fishes (e.g. Menidia sp. being replaced by a ‘fall’ group (e.g. Ctenogobius boleosoma and Gobionellus oceanicus; ‘winter’ and ‘spring’ groups were dominated by shelf-spawned (e.g. M. undulatus and Paralichthys spp. and obligate estuarine species (e.g. Leiostomus xanthurus and Pseudopleuronectes americanus, respectively. This study demonstrates that inexpensive and simultaneous sampling in different estuaries provides important insights into the variability in community structure of fish assemblages at large spatial scales.

  18. The tectonic origin of the Bay of Bengal and Bangladesh

    Digital Repository Service at National Institute of Oceanography (India)

    Talwani, M.; Desa, M.; Ismaiel, M.; Krishna, K.S.

    direction for the Indian plate.  4. The 85°E Ridge was initially evolved as a fracture zone, and subsequently associated with volcanism.   5. The oceanic crust of the Western Basin of the Bay of Bengal is older than the crust of the Eastern Basin and Bangla... it a northern extension of the 86°E fracture zone, while Sar et al. [2009] suggested it could have a continental origin. Gibbons et al. [2013] inferred that the 85°E Ridge and the Kerguelen Fracture Zone formed as conjugate flanks of a 'leaky...

  19. Mobile Clouds

    DEFF Research Database (Denmark)

    Fitzek, Frank; Katz, Marcos

    A mobile cloud is a cooperative arrangement of dynamically connected communication nodes sharing opportunistic resources. In this book, authors provide a comprehensive and motivating overview of this rapidly emerging technology. The book explores how distributed resources can be shared by mobile...... users in very different ways and for various purposes. The book provides many stimulating examples of resource-sharing applications. Enabling technologies for mobile clouds are also discussed, highlighting the key role of network coding. Mobile clouds have the potential to enhance communications...... performance, improve utilization of resources and create flexible platforms to share resources in very novel ways. Energy efficient aspects of mobile clouds are discussed in detail, showing how being cooperative can bring mobile users significant energy saving. The book presents and discusses multiple...

  20. Mobilities Design

    DEFF Research Database (Denmark)

    Jensen, Ole B.; Lanng, Ditte Bendix; Wind, Simon

    2016-01-01

    In this paper, we identify the nexus between design (architecture, urban design, service design, etc.) and mobilities as a new and emerging research field. In this paper, we apply a “situational mobilities” perspective and take point of departure in the pragmatist question: “What design decisions...... and interventions affords this particular mobile situation?” The paper presents the contours of an emerging research agenda within mobilities research. The advent of “mobilities design” as an emerging research field points towards a critical interest in the material as well as practical consequences of contemporary......-making. The paper proposes that increased understanding of the material affordances facilitated through design provides important insight to planning and policymaking that at times might be in risk of becoming too detached from the everyday life of the mobile subject within contemporary mobilities landscapes....

  1. Comments on Meo et al. Association of Exposure to Radio-Frequency Electromagnetic Field Radiation (RF-EMFR Generated by Mobile Phone Base Stations with Glycated Hemoglobin (HbA1c and Risk of Type 2 Diabetes Mellitus. Int. J. Environ. Res. Public Health, 2015, 12, 14519–14528

    Directory of Open Access Journals (Sweden)

    Seyed Alireza Mortazavi

    2016-02-01

    Full Text Available With great interest and enthusiasm, we have read the article by Meo et al. entitled “Association of Exposure to Radio-Frequency Electromagnetic Field Radiation (RF-EMFR Generated by Mobile Phone Base Stations with Glycated Hemoglobin (HbA1c and Risk of Type 2 Diabetes Mellitus” that is published in the latest issue of the International Journal of Environmental Research and Public Health [1].[...

  2. Mobiles Robotersystem

    OpenAIRE

    Schmierer, G.; Wolf, A.

    1999-01-01

    DE 19816893 A UPAB: 20000203 NOVELTY - An optical and or acoustic noticeable advertising and or information carrier (10) is fixed permitting detachment in such a manner at the mobile platform (8), that the advertising and or information carrier does not impair the movability of the mobile platform. The advertising is provided at an exposed place on the mobile platform. USE - Advertising or information communication. ADVANTAGE - Advertising or information is imparted in prominent positioning w...

  3. 76 FR 75508 - United States Navy Restricted Area, SUPSHIP Bath Maine Detachment Mobile at AUSTAL, USA, Mobile...

    Science.gov (United States)

    2011-12-02

    ... Navy Restricted Area, SUPSHIP Bath Maine Detachment Mobile at AUSTAL, USA, Mobile, AL; Restricted Area... facility located in Mobile, Alabama. The Supervisor of Shipbuilding, Conversion and Repair, United States... contracts at AUSTAL USA in Mobile, Alabama, on October 9, 2011, replacing Supervisor of Shipbuilding...

  4. Mobil marketing

    OpenAIRE

    Engelová, Kateřina

    2006-01-01

    Mobil marketing - reklama a podpora prodeje prostřednictvím mobilních telefonů. Technologické a kulturní předpoklady vzniku tohoto odvětví. Mobil marketing a marketingový mix, možnosti synergie. Nástroje mobil marketingu - reklamní SMS a MMS, lokační služby, soutěže, ankety a hlasování, věrnostní systémy, mobilní obsah. Subjekty mobil marketingu. M-komerce. Využití pro podnikové aplikace.

  5. 33 CFR 100.919 - International Bay City River Roar, Bay City, MI.

    Science.gov (United States)

    2010-07-01

    ... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false International Bay City River Roar, Bay City, MI. 100.919 Section 100.919 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF... Bay City River Roar, Bay City, MI. (a) Regulated Area. A regulated area is established to include all...

  6. 33 CFR 162.125 - Sturgeon Bay and the Sturgeon Bay Ship Canal, Wisc.

    Science.gov (United States)

    2010-07-01

    ... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Sturgeon Bay and the Sturgeon Bay Ship Canal, Wisc. 162.125 Section 162.125 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY INLAND WATERWAYS NAVIGATION REGULATIONS § 162.125 Sturgeon Bay and the Sturgeon Bay Ship...

  7. 77 FR 38488 - Safety Zone; Alexandria Bay Chamber of Commerce, St. Lawrence River, Alexandria Bay, NY

    Science.gov (United States)

    2012-06-28

    ... 1625-AA00 Safety Zone; Alexandria Bay Chamber of Commerce, St. Lawrence River, Alexandria Bay, NY... restrict vessels from a portion of the St. Lawrence River during the Alexandria Bay Chamber of Commerce... of proposed rulemaking (NPRM) entitled Safety Zone; Alexandria Bay Chamber of Commerce, St. Lawrence...

  8. Humboldt Bay, California Benthic Habitats 2009 Geodatabase

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Humboldt Bay is the largest estuary in California north of San Francisco Bay and represents a significant resource for the north coast region. Beginning in 2007 the...

  9. Humboldt Bay Benthic Habitats 2009 Aquatic Setting

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Humboldt Bay is the largest estuary in California north of San Francisco Bay and represents a significant resource for the north coast region. Beginning in 2007 the...

  10. San Francisco Bay Water Quality Improvement Fund

    Science.gov (United States)

    EPAs grant program to protect and restore San Francisco Bay. The San Francisco Bay Water Quality Improvement Fund (SFBWQIF) has invested in 58 projects along with 70 partners contributing to restore wetlands, water quality, and reduce polluted runoff.,

  11. South Bay Salt Pond Mercury Studies Project

    Science.gov (United States)

    Information about the SFBWQP South Bay Salt Pond Mercury Studies Project, part of an EPA competitive grant program to improve SF Bay water quality focused on restoring impaired waters and enhancing aquatic resources.

  12. Humboldt Bay, California Benthic Habitats 2009 Substrate

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Humboldt Bay is the largest estuary in California north of San Francisco Bay and represents a significant resource for the north coast region. Beginning in 2007 the...

  13. Humboldt Bay, California Benthic Habitats 2009 Geoform

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Humboldt Bay is the largest estuary in California north of San Francisco Bay and represents a significant resource for the north coast region. Beginning in 2007 the...

  14. Scala mobile con deserto

    OpenAIRE

    Scotto di Luzio, Lorenzo

    2013-01-01

    Il progetto consiste nella costruzione di una scala mobile nel deserto, che oggi viene identificata come simbolo del mondo del consumo, emblema di una società usa e getta tanto declamata da Zygmunt Bauman, mentre in passato nella simbologia cristiana la semplice scala rappresentava l’unione tra cielo e terra, ossia la possibilità di ascendere al cielo. Lorenzo Scotto di Luzio lavora sugli opposti, inserisce in un ambiente totalmente neutro – tratto distintivo del mondo orientale – un elemento...

  15. Internal structure of the 85°E ridge, Bay of Bengal: Evidence for multiphase volcanism

    Digital Repository Service at National Institute of Oceanography (India)

    Ismaiel, M.; Krishna, K.S.; Srinivas, K.; Mishra, J.; Saha, D.

    fragments 3 of Elan Bank and part of the present Kerguelen Plateau (Talwani et al., 2016). As a result, age of the oceanic floor in the Western Basin of the Bay of Bengal is older than the other parts. In southeastern quarter of the Bay of Bengal... interpreted as carbonate bank (Gopala Rao et al., 1997; Karuppuswamy, 2013), therefore, we too conjecture the lens shaped reflection free zone identified on our profiles as a carbonate bank, and this may have formed when the defunct volcanic structure...

  16. Contaminant transport in Massachusetts Bay

    Science.gov (United States)

    Butman, Bradford

    Construction of a new treatment plant and outfall to clean up Boston Harbor is currently one of the world's largest public works projects, costing about $4 billion. There is concern about the long-term impact of contaminants on Massachusetts Bay and adjacent Gulf of Maine because these areas are used extensively for transportation, recreation, fishing, and tourism, as well as waste disposal. Public concern also focuses on Stellwagen Bank, located on the eastern side of Massachusetts Bay, which is an important habitat for endangered whales. Contaminants reach Massachusetts Bay not only from Boston Harbor, but from other coastal communities on the Gulf of Maine, as well as from the atmosphere. Knowledge of the pathways, mechanisms, and rates at which pollutants are transported throughout these coastal environments is needed to address a wide range of management questions.

  17. Bayes linear statistics, theory & methods

    CERN Document Server

    Goldstein, Michael

    2007-01-01

    Bayesian methods combine information available from data with any prior information available from expert knowledge. The Bayes linear approach follows this path, offering a quantitative structure for expressing beliefs, and systematic methods for adjusting these beliefs, given observational data. The methodology differs from the full Bayesian methodology in that it establishes simpler approaches to belief specification and analysis based around expectation judgements. Bayes Linear Statistics presents an authoritative account of this approach, explaining the foundations, theory, methodology, and practicalities of this important field. The text provides a thorough coverage of Bayes linear analysis, from the development of the basic language to the collection of algebraic results needed for efficient implementation, with detailed practical examples. The book covers:The importance of partial prior specifications for complex problems where it is difficult to supply a meaningful full prior probability specification...

  18. With Prudhoe Bay in decline

    International Nuclear Information System (INIS)

    Davis, J.M.; Pollock, J.R.

    1992-01-01

    Almost every day, it seems, someone is mentioning Prudhoe Bay---its development activities, the direction of its oil production, and more recently its decline rate. Almost as frequently, someone is mentioning the number of companies abandoning exploration in Alaska. The state faces a double-edged dilemma: decline of its most important oil field and a diminished effort to find a replacement for the lost production. ARCO has seen the Prudhoe Bay decline coming for some time and has been planning for it. We have reduced staff, and ARCO and BP Exploration are finding cost-effective ways to work more closely together through such vehicles as shared services. At the same time, ARCO is continuing its high level of Alaskan exploration. This article will assess the future of Prudhoe Bay from a technical perspective, review ARCO's exploration plans for Alaska, and suggest what the state can do to encourage other companies to invest in this crucial producing region and exploratory frontier

  19. Mobile phones and mobile communication

    DEFF Research Database (Denmark)

    Ling, Richard; Donner, Jonathan

    With staggering swiftness, the mobile phone has become a fixture of daily life in almost every society on earth. In 2007, the world had over 3 billion mobile subscriptions. Prosperous nations boast of having more subscriptions than people. In the developing world, hundreds of millions of people who...... could never afford a landline telephone now have a mobile number of their own. With a mobile in our hand many of us feel safer, more productive, and more connected to loved ones, but perhaps also more distracted and less involved with things happening immediately around us. Written by two leading...... researchers in the field, this volume presents an overview of the mobile telephone as a social and cultural phenomenon. Research is summarized and made accessible though detailed descriptions of ten mobile users from around the world. These illustrate popular debates, as well as deeper social forces at work...

  20. Distribution and behavior of major and trace elements in Tokyo Bay, Mutsu Bay and Funka Bay marine sediments

    International Nuclear Information System (INIS)

    Honda, Teruyuki; Kimura, Ken-ichiro

    2003-01-01

    Fourteen major and trace elements in marine sediment core samples collected from the coasts along eastern Japan, i.e. Tokyo Bay (II) (the recess), Tokyo Bay (IV) (the mouth), Mutsu Bay and Funka Bay and the Northwest Pacific basin as a comparative subject were determined by the instrumental neutron activation analysis (INAA). The sedimentation rates and sedimentary ages were calculated for the coastal sediment cores by the 210 Pb method. The results obtained in this study are summarized as follows: (1) Lanthanoid abundance patterns suggested that the major origin of the sediments was terrigenous material. La*/Lu* and Ce*/La* ratios revealed that the sediments from Tokyo Bay (II) and Mutsu Bay more directly reflected the contribution from river than those of other regions. In addition, the Th/Sc ratio indicated that the coastal sediments mainly originated in the materials from the volcanic island-arcs, Japanese islands, whereas those from the Northwest Pacific mainly from the continent. (2) The correlation between the Ce/U and Th/U ratios with high correlation coefficients of 0.920 to 0.991 indicated that all the sediments from Tokyo Bay (II) and Funka Bay were in reducing conditions while at least the upper sediments from Tokyo Bay (IV) and Mutsu Bay were in oxidizing conditions. (3) It became quite obvious that the sedimentation mechanism and the sedimentation environment at Tokyo Bay (II) was different from those at Tokyo Bay (IV), since the sedimentation rate at Tokyo Bay (II) was approximately twice as large as that at Tokyo Bay (IV). The sedimentary age of the 5th layer (8∼10 cm in depth) from Funka Bay was calculated at approximately 1940∼50, which agreed with the time, 1943∼45 when Showa-shinzan was formed by the eruption of the Usu volcano. (author)

  1. Automation in tube finishing bay

    International Nuclear Information System (INIS)

    Bhatnagar, Prateek; Satyadev, B.; Raghuraman, S.; Syama Sundara Rao, B.

    1997-01-01

    Automation concept in tube finishing bay, introduced after the final pass annealing of PHWR tubes resulted in integration of number of sub-systems in synchronisation with each other to produce final cut fuel tubes of specified length, tube finish etc. The tube finishing bay which was physically segregated into four distinct areas: 1. tube spreader and stacking area, 2. I.D. sand blasting area, 3. end conditioning, wad blowing, end capping and O.D. wet grinding area, 4. tube inspection, tube cutting and stacking area has been studied

  2. Chesapeake Bay plume dynamics from LANDSAT

    Science.gov (United States)

    Munday, J. C., Jr.; Fedosh, M. S.

    1981-01-01

    LANDSAT images with enhancement and density slicing show that the Chesapeake Bay plume usually frequents the Virginia coast south of the Bay mouth. Southwestern (compared to northern) winds spread the plume easterly over a large area. Ebb tide images (compared to flood tide images) show a more dispersed plume. Flooding waters produce high turbidity levels over the shallow northern portion of the Bay mouth.

  3. Default Bayes factors for ANOVA designs

    NARCIS (Netherlands)

    Rouder, Jeffrey N.; Morey, Richard D.; Speckman, Paul L.; Province, Jordan M.

    2012-01-01

    Bayes factors have been advocated as superior to p-values for assessing statistical evidence in data. Despite the advantages of Bayes factors and the drawbacks of p-values, inference by p-values is still nearly ubiquitous. One impediment to the adoption of Bayes factors is a lack of practical

  4. Urban Mobility

    DEFF Research Database (Denmark)

    2017-01-01

    This anthology is the proceedings publication from the 2015 NAF Symposium in Malmö, Sweden. The aim of the 2015 NAF Symposium “Urban Mobility – Architectures, Geographies and Social Space” was to facilitate a cross-disciplinary discussion on urban mobility in which the juxtaposition of different...

  5. Urban Mobility

    DEFF Research Database (Denmark)

    2017-01-01

    This anthology is the proceedings publication from the 2015 NAF Symposium in Malmö, Sweden. The aim of the 2015 NAF Symposium “Urban Mobility – Architectures, Geographies and Social Space” was to facilitate a cross-disciplinary discussion on urban mobility in which the juxtaposition of different ...

  6. Mobile phone

    International Nuclear Information System (INIS)

    2009-01-01

    Almost the entire Norwegian population has cell phone. The usefulness of the cell phone is great, but can use a mobile phone to health or discomfort? How can exposure be reduced? NRPA follows research and provides advice on mobile phone use. (AG)

  7. Intensive mobilities

    DEFF Research Database (Denmark)

    Vannini, Phillip; Bissell, David; Jensen, Ole B.

    with fieldwork conducted in Canada, Denmark and Australia to develop our understanding of the experiential politics of long distance workers. Rather than focusing on the extensive dimensions of mobilities that are implicated in patterns and trends, our paper turns to the intensive dimensions of this experience......This paper explores the intensities of long distance commuting journeys as a way of exploring how bodily sensibilities are being changed by the mobilities that they undertake. The context of this paper is that many people are travelling further to work than ever before owing to a variety of factors...... which relate to transport, housing and employment. Yet we argue that the experiential dimensions of long distance mobilities have not received the attention that they deserve within geographical research on mobilities. This paper combines ideas from mobilities research and contemporary social theory...

  8. Designing Mobilities

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    are often still not engaged with in a sufficiently manner. Often social sciences keep distance to the physical and material as if the social was still to be understood as a realm separate of technology, architecture, and design (for a critique of this see; Latour 2005 and Urry 2000). This paper takes point......Within the so-called ‘mobilities turn’ (Adey 2010; Cresswell 2006; Urry 2007) much research has taken place during the last decade bringing mobilities into the centre of sociological analysis. However, the materiality and spatiality of artefacts, infrastructures, and sites hosting mobilities...... of departure in the sociological perspective termed ‘Staging Mobilities’ (Jensen 2013a) and utilizes this as an analytical frame for exploring cases of mobility design. The paper put focus on how the material shape, design and architectures of technologies, spaces and sites influence mobilities practices...

  9. Mobile probes

    DEFF Research Database (Denmark)

    Ørngreen, Rikke; Jørgensen, Anna Neustrup; Noesgaard, Signe Schack

    2016-01-01

    A project investigating the effectiveness of a collection of online resources for teachers' professional development used mobile probes as a data collection method. Teachers received questions and tasks on their mobile in a dialogic manner while in their everyday context as opposed...... to in an interview. This method provided valuable insight into the contextual use, i.e. how did the online resource transfer to the work practice. However, the research team also found that mobile probes may provide the scaffolding necessary for individual and peer learning at a very local (intra-school) community...... level. This paper is an initial investigation of how the mobile probes process proved to engage teachers in their efforts to improve teaching. It also highlights some of the barriers emerging when applying mobile probes as a scaffold for learning....

  10. Mobilities Design

    DEFF Research Database (Denmark)

    Jensen, Ole B.; Lanng, Ditte Bendix

    2016-01-01

    of life’ for billions of people in the everyday life. This paper is structured in three parts. After the general introduction we present the mobilities theory perspective of ‘staging mobilities’ and connects this to the empirical phenomenon of parking lots and their design. The paper ends in section three......Contemporary society is marked and defined by the ways in which mobile goods, bodies, vehicles, objects, and data are organized, moved and staged. On the backgound of the ‘mobilities turn’ (for short review paper on this see; Sheller 2011, Vannini 2010) this paper proposes a further development...... of the perspective in the direction of a material and design oriented turn. In order to fulfill this purpose we articulate a new and emerging research field, namely that of ‘mobilities design’. In our understanding time has come to articulate ‘Mobilities Design’ as a dedicated research field in and of its own...

  11. Mobile Lexicography

    DEFF Research Database (Denmark)

    Køhler Simonsen, Henrik

    2015-01-01

    are already mobile – but lexicography is not yet fully ready for the mobile challenge, mobile users and mobile user situations. The article is based on empirical data from two surveys comprising 10 medical doctors, who were asked to look up five medical substances with the medical dictionary app Medicin.......dk and five students, who were asked to look up five terms with the dictionary app Gyldendal Engelsk-Dansk. The empirical data comprise approximately 15 hours of recordings of user behavior, think-aloud data and interview data. The data indicate that there is still much to be done in this area...... and that lexicographic innovation is needed. A new type of users, new user situations and new access methods call for new lexicographic solutions, and this article proposes a six-pointed hexagram model, which can be used during dictionary app design to lexicographically calibrate the six dimensions in mobile...

  12. Restricted Mobilities

    DEFF Research Database (Denmark)

    Nielsen, Mette; Lassen, Claus

    2012-01-01

    communities and shopping centres through mobility lenses. The article shows how different mobility systems enable and restrict the public access to private-public spaces, and it points out that proprietary communities create an unequal potential for human movement and access in the city. The main argument......Privatisation of public spaces in the contemporary city has increased during the last decades but only few studies have approached this field from a mobility perspective. Therefore the article seeks to rectify this by exploring two Australian examples of private spaces in the city; gated...... and stratification mechanisms. In conclusion the article therefore suggests that future urban research and planning also needs a mobile understanding of spaces in the cities and how different mobility systems play an important role to sustain the exclusiveness that often characterises the private/public spaces...

  13. Mobility Work

    DEFF Research Database (Denmark)

    Bardram, Jakob Eyvind; Bossen, Claus

    2005-01-01

    We posit the concept of Mobility Work to describe efforts of moving about people and things as part of accomplishing tasks. Mobility work can be seen as a spatial parallel to the concept of articulation work proposed by the sociologist Anselm Strauss. Articulation work describes efforts of coordi....../or resources. To accomplish their work, actors have to make the right configuration of these four aspects emerge.......We posit the concept of Mobility Work to describe efforts of moving about people and things as part of accomplishing tasks. Mobility work can be seen as a spatial parallel to the concept of articulation work proposed by the sociologist Anselm Strauss. Articulation work describes efforts...... of coordination necessary in cooperative work, but focuses, we argue, mainly on the temporal aspects of cooperative work. As a supplement, the concept of mobility work focuses on the spatial aspects of cooperative work. Whereas actors seek to diminish the amount of articulation work needed in collaboration...

  14. Mobility Challenges

    DEFF Research Database (Denmark)

    Jensen, Ole B.; Lassen, Claus

    2011-01-01

    This article takes point of departure in the challenges to understand the importance of contemporary mobility. The approach advocated is a cross-disciplinary one drawing on sociology, geography, urban planning and design, and cultural studies. As such the perspective is to be seen as a part...... of the so-called ‘mobility turn’ within social science. The perspective is illustrative for the research efforts at the Centre for Mobility and Urban Studies (C-MUS), Aalborg University. The article presents the contours of a theoretical perspective meeting the challenges to research into contemporary urban...... mobilities. In particular the article discusses 1) the physical city, its infrastructures and technological hardware/software, 2) policies and planning strategies for urban mobility and 3) the lived everyday life in the city and the region....

  15. Tampa Bay as a model estuary for examining the impact of human activities on biogeochemical processes: an introduction

    Science.gov (United States)

    Swarzenski, Peter W.; Baskaran, Mark; Henderson, Carl S.; Yates, Kim

    2007-01-01

    Tampa Bay is a shallow, Y-shaped coastal embayment that is located along the center of the Florida Platform – an expansive accumulation of Cretaceous–Tertiary shallow-water carbonates and evaporites that were periodically exposed during glacio–eustatic sea level fluctuations. As a consequence, extensive karstification likely had a controlling impact on the geologic evolution of Tampa Bay. Despite its large aerial size (∼ 1000 km2), Tampa Bay is relatively shallow (mean depth = 4 m) and its watershed (6700 km2) is among the smallest in the Gulf of Mexico. About 85% of all freshwater inflow (mean = 63 m3 s-1) to the bay is carried by four principal tributaries (Orlando et al., 1993). Groundwater makes up an important component of baseflow of these coastal streams and may also be important in delivering nutrients and other constituents to the bay proper by submarine groundwater discharge.

  16. Study on sediments from Almirantado Bay in the Antarctica continent

    International Nuclear Information System (INIS)

    Gomes, Marcelo da Silva; Montone, Rosalinda Carmela; Weber, Rolf Roland

    1999-01-01

    The Antarctic Continent is relatively free from human activities but it already comes presenting low levels of environmental contamination for anthropogenic sources. The anthropogenic contamination can be taken mainly to the continent through different manners for the marine and atmospheric currents. This work has as objective to analyze samples of sediments from Antarctic Continent in the area of Almirantado Bay, where the Brazilian Station of Resource Comandante Ferraz is located. The concentrations of ten metallic elements (Ni, Cu, Zn, Cd, Sn, Pb, U, Al, Fe and Li) were analyzed in twelve collection sites along the whole Bay. AAS and HR-ICPMS accomplished the analyses of those metallic elements. It was verified in the obtained results that a variation does not exist in the concentrations obtained among the collection sites, indicating a homogeneity in the area and there is no evidence of polluting source, at least at those obtained concentration levels. (author)

  17. Waves off Gopalpur, northern Bay of Bengal during cyclone Phailin.

    Digital Repository Service at National Institute of Oceanography (India)

    Amrutha, M.M.; SanilKumar, V.; Anoop, T.R.; Nair, T.M.B.; Nherakkol, A.; Jeyakumar, C.

    , 1073–1083, 2014 www.ann-geophys.net/32/1073/2014/ doi:10.5194/angeo-32-1073-2014 © Author(s) 2014. CC Attribution 3.0 License. Waves off Gopalpur, northern Bay of Bengal during Cyclone Phailin M. M. Amrutha1, V. Sanil Kumar1, T. R. Anoop1, T. M..., 1073–1083, 2014 www.ann-geophys.net/32/1073/2014/ M. M. Amrutha et al.: Waves off Gopalpur, northern Bay of Bengal during Cyclone Phailin 1075 Figure 1. Track of the Cyclone Phailin from 8 October 2013 03:00 UTC to 13 October 2013 06:00 UTC. S(f )= αg 2...

  18. Classification using Hierarchical Naive Bayes models

    DEFF Research Database (Denmark)

    Langseth, Helge; Dyhre Nielsen, Thomas

    2006-01-01

    Classification problems have a long history in the machine learning literature. One of the simplest, and yet most consistently well-performing set of classifiers is the Naïve Bayes models. However, an inherent problem with these classifiers is the assumption that all attributes used to describe......, termed Hierarchical Naïve Bayes models. Hierarchical Naïve Bayes models extend the modeling flexibility of Naïve Bayes models by introducing latent variables to relax some of the independence statements in these models. We propose a simple algorithm for learning Hierarchical Naïve Bayes models...

  19. Latest results from Daya Bay

    Science.gov (United States)

    Vorobel, Vit; Daya Bay Collaboration

    2017-07-01

    The Daya Bay Reactor Neutrino Experiment was designed to measure θ 13, the smallest mixing angle in the three-neutrino mixing framework, with unprecedented precision. The experiment consists of eight functionally identical detectors placed underground at different baselines from three pairs of nuclear reactors in South China. Since Dec. 2011, the experiment has been running stably for more than 4 years, and has collected the largest reactor anti-neutrino sample to date. Daya Bay is able to greatly improve the precision on θ 13 and to make an independent measurement of the effective mass splitting in the electron antineutrino disappearance channel. Daya Bay can also perform a number of other precise measurements, such as a high-statistics determination of the absolute reactor antineutrino flux and spectrum, as well as a search for sterile neutrino mixing, among others. The most recent results from Daya Bay are discussed in this paper, as well as the current status and future prospects of the experiment.

  20. Daya bay reactor neutrino experiment

    International Nuclear Information System (INIS)

    Cao Jun

    2010-01-01

    Daya Bay Reactor Neutrino Experiment is a large international collaboration experiment under construction. The experiment aims to precisely determine the neutrino mixing angle θ 13 by detecting the neutrinos produced by the Daya Bay Nuclear Power Plant. θ 13 is one of two unknown fundamental parameters in neutrino mixing. Its magnitude is a roadmap of the future neutrino physics, and very likely related to the puzzle of missing antimatter in our universe. The precise measurement has very important physics significance. The detectors of Daya Bay is under construction now. The full operation is expected in 2011. Three years' data taking will reach the designed the precision, to determine sin 2 2θ 13 to better than 0.01. Daya Bay neutrino detector is an underground large nuclear detector of low background, low energy, and high precision. In this paper, the layout of the experiment, the design and fabrication progress of the detectors, and some highlighted nuclear detecting techniques developed in the detector R and D are introduced. (author)

  1. Sustainable Mobility

    DEFF Research Database (Denmark)

    Kjærulff, Aslak Aamot

    This paper combines strands of mobilities theory and planning theory, and develops a qualitative approach to look across emerging planning practices. By actively following 8 Danish urban and transport planners, over the course of 2 years, we learn how their practices have changed, inspired...... by mobility management, a concept aiming to reduce carbon emissions from transportation in western societies. The article focuses on how municipal planners formulate the role of mobility management activities organized around private companies, and how their practices are connected to wider ideas on planning....

  2. A Bayes Factor Meta-Analysis of Recent Extrasensory Perception Experiments: Comment on Storm, Tressoldi, and Di Risio (2010)

    Science.gov (United States)

    Rouder, Jeffrey N.; Morey, Richard D.; Province, Jordan M.

    2013-01-01

    Psi phenomena, such as mental telepathy, precognition, and clairvoyance, have garnered much recent attention. We reassess the evidence for psi effects from Storm, Tressoldi, and Di Risio's (2010) meta-analysis. Our analysis differs from Storm et al.'s in that we rely on Bayes factors, a Bayesian approach for stating the evidence from data for…

  3. MOBILE LEARNING – AN ALTERNATIVE APPROACH IN HIGHER EDUCATION

    OpenAIRE

    Khalil Alsaadat

    2017-01-01

    Due to the swift proliferation of mobile technology, the use of mobile devices, like notebook computers, and mobile phones, as learning tools has offered people the flexibility and convenience to acquire new knowledge anytime and anywhere. In light of this, growing attention has been paid to the critical roles of perceived flexibility advantages in mobile and online learning (Huang et al, 2014). And because of the increasing use of mobile technologies in society and by the younger generation,...

  4. Stormwater impact in Guanabara Bay (Rio de Janeiro): Evidences of seasonal variability in the dynamic of the sediment heavy metals

    Science.gov (United States)

    Fonseca, E. M.; Baptista Neto, J. A.; Silva, C. G.; McAlister, J. J.; Smith, B. J.; Fernandez, M. A.

    2013-09-01

    Guanabara Bay is one of the most prominent coastal bays in Brazil. This environment is an estuary of 91 rivers and channels, surrounded by the metropolis of Rio de Janeiro. The bay receives considerable amounts of contaminants introduced from sewage effluents, industrial discharge, urban and agricultural runoff, atmospheric fallout, and the combined inputs from the rivers, making Guanabara Bay one of the most polluted coastal environments on the Brazilian coastline. The aim of this work is to study the concentration and fractionation of the heavy metals within the sediments of the bay. In order to understand the possible seasonal influence on the heavy metal fractionation, two campaigns were carried out in two different seasons of the year (rainy and dry). Twelve stations, in four different areas, with different oceanographic characteristics, where chosen. To assess the bioavailability of the metals a selective extraction procedure was used to study the geochemical fractionation and bioavailability of Zn, Cu, Cr, Ni and Pb. The rainy season was very important with respect to variation in the total concentrations of Cr, Ni and Pb and their fractionation within different "operational" phases present in Guanabara Bay sediments. The water-soluble phase showed little importance, with respect to metal adsorption and this would suggest very low mobility of metals in the water column. Nevertheless, the potentially available metals within these sediments showed a high probability for their release and therefore cause contamination of the water column, since different parts of the bay are constantly subjected to dredging projects promoted by the harbor authorities.

  5. Herbert: A Second Generation Mobile Robot.

    Science.gov (United States)

    1988-01-01

    PROJECT. TASK S Artificial Inteligence Laboratory AREA A WORK UNIT NUMBERS ’ ~ 545 Technology Square Cambridge, MA 02139 11. CONTROLLING OFFICE NAME...AD-AI93 632 WMRT: A SECOND GENERTION MOBILE ROWT(U) / MASSACHUSETTS IMST OF TECH CAMBRIDGE ARTIFICIAL INTELLIGENCE LAB R BROOKS ET AL .JAN l8 Al-M...MASSACHUSETTS INSTITUTE OF TECHNOLOGY ARTIFICIAL INTELLIGENCE LABORATORY A. I. Memo 1016 January, 1988 HERBERT: A SECOND GENERATION MOBILE ROBOT Rodney A

  6. Shaping Air Mobility Forces for Future Relevance

    Science.gov (United States)

    2017-01-01

    King Air University Press 600 Chennault Circle, Building 1405 Maxwell AFB, AL 36112-6010 afri.aupress@us.af.mil http://aupress.au.af.mil...the congressional study’s Persian Gulf scenario.37 Later Defense Department air mobility plans continued the CMMS pat- tern of paring down air mobility

  7. The Evolution of Personal Mobile Communications

    Institute of Scientific and Technical Information of China (English)

    I.S.Groves

    1995-01-01

    Within Europe the recently published Mobile Green Paper predicts a market for person-al communication services(PCS)of,perhaps,80% of the population-one connection to every adult.In the light of such a demand this paper reviews the emergence of present generation sys-tems and looks forward at vision for third generation mobile systems.

  8. Ti, Al

    Indian Academy of Sciences (India)

    In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti0.5Al0.5 powder metallurgical target in a reactive nitrogen atmosphere at ...

  9. Nelson River and Hudson Bay

    Science.gov (United States)

    2002-01-01

    Rivers that empty into large bodies of water can have a significant impact on the thawing of nearshore winter ice. This true-color Moderate Resolution Imaging Spectroradiometer (MODIS) image from May 18, 2001, shows the Nelson River emptying spring runoff from the Manitoba province to the south into the southwestern corner of Canada's Hudson Bay. The warmer waters from more southern latitudes hasten melting of ice near the shore, though some still remained, perhaps because in shallow coastal waters, the ice could have been anchored to the bottom. High volumes of sediment in the runoff turned the inflow brown, and the rim of the retreating ice has taken on a dirty appearance even far to the east of the river's entrance into the Bay. The sediment would have further hastened the melting of the ice because its darker color would have absorbed more solar radiation than cleaner, whiter ice. Image courtesy Jacques Descloitres, MODIS Land Rapid Response Team at NASA GSFC

  10. Spill management strategy for the Chesapeake Bay

    International Nuclear Information System (INIS)

    Butler, H.L.; Chapman, R.S.; Johnson, B.H.

    1990-01-01

    The Chesapeake Bay Program is a unique cooperative effort between state and Federal agencies to restore the health and productivity of America's largest estuary. To assist in addressing specific management issues, a comprehensive three-dimensional, time-varying hydrodynamic and water quality model has ben developed. The Bay modeling strategy will serve as an excellent framework for including submodules to predict the movement, dispersion, and weathering of accidental spills, such as for petroleum products or other chemicals. This paper presents sample results from the Bay application to illustrate the success of the model system in simulating Bay processes. Also, a review of model requirements for successful spill modeling in Chesapeake Bay is presented. Recommendations are given for implementing appropriate spill modules with the Bay model framework and establishing a strategy for model use in addressing management issues

  11. Ospreys Use Bald Eagle Nests in Chesapeake Bay Area

    OpenAIRE

    Therres, Glenn D.; Chandler, Sheri K.

    1993-01-01

    Ospreys (Pandion haliaetus) and Bald Eagles (Haliaeetus leucocephalus) share similar breeding habitat in the Chesapeake Bay area and elsewhere. The nests of these species are similar in size and appearance. Ospreys typically build large stick nests in dead trees or on man-made structures (C.J. Henny et al. 1974, Chesapeake Sci. 15:125-133; A.F. Poole 1989, Ospreys: a natural and unnatural history, Cambridge Univ. Press, NY), while Bald Eagles usually build larger nests in live trees (P.B. Woo...

  12. Environmental geology of Harrison Bay, northern Alaska

    Science.gov (United States)

    Craig, J.D.; Thrasher, G.P.

    1982-01-01

    The surficial and shallow subsurface geology of Harrison Bay on the Beaufort Sea coast was mapped as part of the U.S. Geological Survey's prelease evaluation for Outer Continental Shelf (OCS) Oil and Gas Lease Sale 71. During the 1980 summer season, approximately 1600 km of multisensored, high-resolution geophysical profile data were collected along a rectangular grid with 4.8 km line spacing. Interpretation of these data is presented on five maps showing bathymetry, sea-floor microrelief, ice-gouge characteristics, Holocene sediment thickness, and geologic structure to depths of approximately 1000 m. On a broad scale, the seafloor is shallow and almost flat, although microrelief features produced by sediment transport and ice-gouge processes typically vary up to several meters in amplitude. Microrelief bedforms related to hydraulic processes are predominant in water depths less than 12 m. Microrelief caused by ice gouging generally increases with water depth, reaching a maximum of 2 m or more in water depths beyond the 20 m isobath. This intensely gouged area lies beneath the shear zone between the seasonal landfast ice and the mobile polar ice pack. The thickness of recent (Holocene) sediment increases offshore, from 2 m near the Colville River delta to 30 m or more on the outer shelf. The thin Holocene layer is underlain by a complex horizon interpreted to be the upper surface of a Pleistocene deposit similar in composition to the present Arctic Coastal Plain. The base of the inferred Pleistocene section is interpreted to be a low-angle unconformity 100 m below sea level. Beneath this Tertiary-Quaternary unconformity, strata are interpreted to be alluvial fan-delta plain deposits corresponding to the Colville Group and younger formations of Late Cretaceous to Tertiary age. Numerous high-angle faults downthrown to the north trend across the survey area. With few exceptions, these faults terminate at or below the 100 m unconformity, suggesting that most tectonism

  13. 75 FR 8297 - Tongass National Forest, Thorne Bay Ranger District, Thorne Bay, AK

    Science.gov (United States)

    2010-02-24

    ..., Thorne Bay, AK AGENCY: Forest Service, USDA. ACTION: Cancellation of Notice of intent to prepare an... Roberts, Zone Planner, Thorne Bay Ranger District, Tongass National Forest, P.O. Box 19001, Thorne Bay, AK 99919, telephone: 907-828-3250. SUPPLEMENTARY INFORMATION: The 47,007-acre Kosciusko Project Area is...

  14. 77 FR 44140 - Drawbridge Operation Regulation; Sturgeon Bay Ship Canal, Sturgeon Bay, WI

    Science.gov (United States)

    2012-07-27

    ... Maple-Oregon Bridges so vehicular traffic congestion would not develop on downtown Sturgeon Bay streets... movement of vehicular traffic in Sturgeon Bay. The Sturgeon Bay Ship Canal is approximately 8.6 miles long... significant increase in vehicular and vessel traffic during the peak tourist and navigation season between...

  15. The onset of deglaciation of Cumberland Bay and Stromness Bay, South Georgia

    NARCIS (Netherlands)

    Van Der Putten, N.; Verbruggen, C.

    Carbon dating of basal peat deposits in Cumberland Bay and Stromness Bay and sediments from a lake in Stromness Bay, South Georgia indicates deglaciation at the very beginning of the Holocene before c. 9500 14C yr BP. This post-dates the deglaciation of one local lake which has been ice-free since

  16. 78 FR 46813 - Safety Zone; Evening on the Bay Fireworks; Sturgeon Bay, WI

    Science.gov (United States)

    2013-08-02

    ...-AA00 Safety Zone; Evening on the Bay Fireworks; Sturgeon Bay, WI AGENCY: Coast Guard, DHS. ACTION.... This temporary safety zone will restrict vessels from a portion of Sturgeon Bay due to a fireworks... hazards associated with the fireworks display. DATES: This rule is effective from 8 p.m. until 10 p.m. on...

  17. Mobile Usability

    DEFF Research Database (Denmark)

    Aryana, Bijan; Clemmensen, Torkil

    2013-01-01

    In this article, a country specific comparative mobile usability study is presented, using Iran and Turkey as the two chosen emerging/emergent nation exemplars of smartphone usage and adoption. In a focus group study, three mobile applications were selected by first-time users of smartphones...... personal contacts. The results and analysis establish the existence of country specific issues and concerns, as well as reveal generic usability issues. The article concludes that the source of these issues is most likely due to a combination of certain contextual features endemic to both Iran and Turkey...

  18. Effects of waves on water dispersion in a semi-enclosed estuarine bay

    Science.gov (United States)

    Delpey, M. T.; Ardhuin, F.; Otheguy, P.

    2012-04-01

    The bay of Saint Jean de Luz - Ciboure is a touristic destination located in the south west of France on the Basque coast. This small bay is 1.5km wide for 1km long. It is semi-enclosed by breakwaters, so that the area is mostly protected from waves except in its eastern part, where wave breaking is regularly observed over a shallow rock shelf. In the rest of the area the currents are generally weak. The bay receives fresh water inflows from two rivers. During intense raining events, the rivers can introduce pollutants in the bay. The input of pollutants combined with the low level dynamic of the area can affect the water quality for several days. To study such a phenomenon, mechanisms of water dispersion in the bay are investigated. The present paper focuses on the effects of waves on bay dynamics. Several field experiments were conducted in the area, combining wave and current measurements from a set of ADCP and ADV, lagrangian difter experiments in the surfzone, salinity and temperature profile measurements. An analysis of this set of various data is provided. It reveals that the bay combines remarkable density stratification due to fresh water inflows and occasionally intense wave-induced currents in the surfzone. These currents have a strong influence on river plume dynamics when the sea state is energetic. Moreover, modifications of hydrodynamics in the bay passes are found to be remarkably correlated with sea state evolutions. This result suggests a significant impact of waves on the bay flushing. To further analyse these phenomena, a three dimensional numerical model of bay hydrodynamics is developed. The model aims at reproducing fresh water inflows combined with wind-, tide- and wave-induced currents and mixing. The model of the bay is implemented using the code MOHID , which has been modified to allow the three dimensional representation of wave-current interactions proposed by Ardhuin et al. [2008b] . The circulation is forced by the wave field modelled

  19. Nutrient load estimates for Manila Bay, Philippines using population data

    Science.gov (United States)

    Sotto, Lara Patricia A.; Beusen, Arthur H. W.; Villanoy, Cesar L.; Bouwman, Lex F.; Jacinto, Gil S.

    2015-06-01

    A major source of nutrient load to periodically hypoxic Manila Bay is the urban nutrient waste water flow from humans and industries to surface water. In Manila alone, the population density is as high as 19,137 people/km2. A model based on a global point source model by Morée et al. (2013) was used to estimate the contribution of the population to nitrogen and phosphorus emissions which was then used in a water transport model to estimate the nitrogen (N) and phosphorus (P) loads to Manila Bay. Seven scenarios for 2050 were tested, with varying degrees and amounts for extent of sewage treatment, and population growth rates were also included. In scenario 1, the sewage connection and treatment remains the same as 2010; in scenario 2, sewage connection is improved but the treatment is the same; in scenario 3, the sewage connection as well as treatment is improved (70% tertiary); and in scenario 4, a more realistic situation of 70% primary treatment achieved with 100% connection to pipes is tested. Scenarios 5, 6, and 7 have the same parameters as 1, 2, and 3 respectively, but with the population growth rate per province reduced to half of what was used in 1, 2, and 3. In all scenarios, a significant increase in N and P loads was observed (varying from 27% to 469% relative to 2010 values). This was found even in scenario 3 where 70% of the waste water undergoes tertiary treatment which removes 80% N and 90% P. However, the lowest increase in N and P load into the bay was achieved in scenarios 5 to 7 where population growth rate is reduced to half of 2010 values. The results suggest that aside from improving sewage treatment, the continued increase of the human population in Manila at current growth rates will be an important determinant of N and P load into Manila Bay.

  20. A Bayes Theory-Based Modeling Algorithm to End-to-end Network Traffic

    OpenAIRE

    Zhao Hong-hao; Meng Fan-bo; Zhao Si-wen; Zhao Si-hang; Lu Yi

    2016-01-01

    Recently, network traffic has exponentially increasing due to all kind of applications, such as mobile Internet, smart cities, smart transportations, Internet of things, and so on. the end-to-end network traffic becomes more important for traffic engineering. Usually end-to-end traffic estimation is highly difficult. This paper proposes a Bayes theory-based method to model the end-to-end network traffic. Firstly, the end-to-end network traffic is described as a independent identically distrib...

  1. Study of Integrated USV/UUV Observation System Performance in Monterey Bay

    Science.gov (United States)

    2017-09-01

    EMATT expendable mobile ASW training target MARS Monterey Accelerated Research System MBARI Monterey Bay Aquarium Research Institute PSD power ...Paula Travis, provided needed support as well. The Naval Postgraduate School faculty and staff are incredibly professional and knowledgeable . The...operation. 9 “The MARS observatory ‘science node’ (shown in orange) has eight ports, each of which can supply data and power connections for

  2. Instrument packages to study long-term sediment transport processes in a shallow bay

    Science.gov (United States)

    Strahle, William J.; Martini, Marinna A.; Davis, Ray E.

    1994-01-01

    Pressure and near-surface and near-bottom measurements of current, temperature, salinity and light transmission were required in Mobile Bay, a 3 m deep estuary on the Gulf of Mexico. This environment presented several obstacles to obtaining long term observations. Boat traffic, soft estuary bottom, heavy biofouling, rapid sample rates and large data storage were overcome by using instrumentation techniques that are applicable to other estuary systems. Nearly two years of continuous data was collected.

  3. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  4. Designing Mobilities

    DEFF Research Database (Denmark)

    Jensen, Ole B.

    How is the width of the pavement shaping the urban experience? How is the material design of transport infrastructure and mobile technology affording social interaction in everyday life spaces? How do people inhabit these spaces with their bodies and in accordance to social and cultural norms...

  5. Mobile IP

    NARCIS (Netherlands)

    Heijenk, Geert; Sallent, S.; Pras, Aiko

    1999-01-01

    The Internet is growing exponentially, both in the amount of traffic carried, and in the amount of hosts connected. IP technology is becoming more and more important, in company networks (Intranets), and also in the core networks for the next generation mobile networks. Further, wireless access to

  6. Mobile Misfortune

    DEFF Research Database (Denmark)

    Vigh, Henrik Erdman

    2015-01-01

    of the mobility it enables. This article, thus, looks at the motives and manners in which young men in Bissau become caught up in transnational flows of cocaine. It shows how motion is emotively anchored and affectively bound: tied to and directed toward a feeling of worth and realisation of being, and how...

  7. Going Mobile?

    DEFF Research Database (Denmark)

    Tallon, Loic; Froes, Isabel Cristina G.

    2011-01-01

    If the future is mobile, how is the museum community developing within that future? What are the challenges museums face within it? In which directions should we be seeking to evolve our collective knowledge share? It was to gain observations on questions such as these that the 2011 Museums & Mob...

  8. Resource Mobilization

    International Development Research Centre (IDRC) Digital Library (Canada)

    Annex 1: The Scoping Study on Donor Funding for. Development Research in ... publication of the Resource Mobilization: A Practical Guide for Research .... applied the concept or technique, which validates the practical application of ... some other staff member would write up a grant application addressed to one, two, or a ...

  9. Mobile Phone

    Institute of Scientific and Technical Information of China (English)

    籍万杰

    2004-01-01

    Your mobile phone rings.and instead of usual electronic signals,it's playing your favorite music.A friend sends your favorite song to cheer you up.One day,a record company might forward new records and music videos to your phone.

  10. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Partida-Manzanera, T.; Roberts, J. W.; Sedghi, N.; Potter, R. J.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al 2 O 3 with high dielectric constant (high-κ) Ta 2 O 5 for gate dielectric applications. (Ta 2 O 5 ) x (Al 2 O 3 ) 1−x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al x Ga 1−x N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta 2 O 5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al 2 O 3 to 4.6 eV for pure Ta 2 O 5 . The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al 2 O 3 up to 25.6 for Ta 2 O 5 . The effect of post-deposition annealing in N 2 at 600 °C on the interfacial properties of undoped Al 2 O 3 and Ta-doped (Ta 2 O 5 ) 0.12 (Al 2 O 3 ) 0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al 2 O 3 /GaN-HEMT and (Ta 2 O 5 ) 0.16 (Al 2 O 3 ) 0.84 /GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al 2 O 3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents

  11. Unique thermal record in False Bay

    CSIR Research Space (South Africa)

    Grundlingh, ML

    1993-10-01

    Full Text Available Over the past decade False Bay has assumed a prime position in terms of research in to large South African bays. This is manifested by investigations that cover flow conditions modelling, thermal structure, management, biology and nutrients, geology...

  12. Hierarchical mixtures of naive Bayes classifiers

    NARCIS (Netherlands)

    Wiering, M.A.

    2002-01-01

    Naive Bayes classifiers tend to perform very well on a large number of problem domains, although their representation power is quite limited compared to more sophisticated machine learning algorithms. In this pa- per we study combining multiple naive Bayes classifiers by using the hierar- chical

  13. Safety culture development at Daya Bay NPP

    International Nuclear Information System (INIS)

    Zhang Shanming

    2001-01-01

    From view on Organization Behavior theory, the concept, development and affecting factors of safety culture are introduced. The focuses are on the establishment, development and management practice for safety culture at Daya Bay NPP. A strong safety culture, also demonstrated, has contributed greatly to improving performance at Daya Bay

  14. The Holocene History of Placentia Bay, Newfoundland

    DEFF Research Database (Denmark)

    Sheldon, Christina; Seidenkrantz, Marit-Solveig; Reynisson, Njall

    2013-01-01

    Marine sediments analyzed from cores taken in Placentia Bay, Newfoundland, located in the Labrador Sea, captured oceanographic and climatic changes from the end of the Younger Dryas through the Holocene. Placentia Bay is an ideal site to capture changes in both the south-flowing Labrador Current ...

  15. Towards a sustainable future in Hudson Bay

    International Nuclear Information System (INIS)

    Okrainetz, G.

    1991-01-01

    To date, ca $40-50 billion has been invested in or committed to hydroelectric development on the rivers feeding Hudson Bay. In addition, billions more have been invested in land uses such as forestry and mining within the Hudson Bay drainage basin. However, there has never been a study of the possible impacts on Hudson Bay resulting from this activity. Neither has there been any federal environmental assessment on any of the economic developments that affect Hudson Bay. To fill this gap in knowledge, the Hudson Bay Program was established. The program will not conduct scientific field research but will rather scan the published literature and consult with leading experts in an effort to identify biophysical factors that are likely to be significantly affected by the cumulative influence of hydroelectric and other developments within and outside the region. An annotated bibliography on Hudson Bay has been completed and used to prepare a science overview paper, which will be circulated for comment, revised, and used as the basis for a workshop on cumulative effects in Hudson Bay. Papers will then be commissioned for a second workshop to be held in fall 1993. A unique feature of the program is its integration of traditional ecological knowledge among the Inuit and Cree communities around Hudson Bay with the scientific approach to cumulative impact assessment. One goal of the program is to help these communities bring forward their knowledge in such a way that it can be integrated into the cumulative effects assessment

  16. Mobile Customer Relationship Management and Mobile Security

    Science.gov (United States)

    Sanayei, Ali; Mirzaei, Abas

    The purpose of this study is twofold. First, in order to guarantee a coherent discussion about mobile customer relationship management (mCRM), this paper presents a conceptualization of mCRM delineating its unique characteristics because of Among the variety of mobile services, considerable attention has been devoted to mobile marketing and in particular to mobile customer relationship management services. Second, the authors discusses the security risks in mobile computing in different level(user, mobile device, wireless network,...) and finally we focus on enterprise mobile security and it's subgroups with a series of suggestion and solution for improve mobile computing security.

  17. The African Mobile Story

    DEFF Research Database (Denmark)

    This book identifies the factors that has enabled the growth of mobile telephony in Africa. The book covers the regulatory factors, the development and usage of mobile application, mobile security and sustainable power source for mobile networks...

  18. Circulations in the Bay of Bengal and the Arabian Sea with Reference to Safe Disposal of Radioactive Wastes Near the Indian Coasts; Les Circulations dans les Eaux du Golfe du Bengale et de la Mer d'Oman et l'Elimination sans Danger des Dechets Radioactifs pres des Cotes Indiennes; 0426 0418 0420 0414 ; Circulaciones en el Golfo de Bengala e en el Mar Arabico con Relacion a la Evacuacion sin Riesgos de Desechos Radiactivos Frente al Litoral Indio

    Energy Technology Data Exchange (ETDEWEB)

    Rama Sastry, A. A. [Meteorological Office, Poona 5 (India)

    1960-07-01

    The author briefly reviews the general knowledge of oceanographic conditions in the Bay of Bengal and the Arabian Sea. On the basis of studies made for some years by the numerous oceanographic stations which operate along the coasts of India, the author studies such oceanographic conditions from the point of view of the safe disposal of radioactive wastes and, using data collected by various expeditions in the Indian Ocean, he studies the physical oceanography of the region north of the equator. Early knowledge of the oceanography of the Bay of Bengal and the Arabian Sea is briefly reviewed. In the light of the numerous oceanographic stations occupied along the coasts of India, in recent years, oceanographic conditions with reference to safe disposal of radioactive wastes into the sea are discussed. Also utilizing the data collected by different expeditions to the Indian Ocean, the physical oceanography of the region north of the equator has been studied. In the upper 200 m there are at least three different water masses both in the Bay of Bengal and the Arabian Sea. Because of very great dilution in the Bay of Bengal, the surface waters could be further sub-classified. From horizontal distributions of various oceanographic parameters, circulation at different levels along the Indian Coasts is given for the upper 150 m and the same is inferred down to 500 m from the vertical sections. The level of no motion seems to be well above the 500 m depth level and fluctuates both in space and time. Mixing of water is deduced from the T-S relations. The seasons of occurrence of upwelling and sinking along the coasts and the region affected are given. Intensity of up we I ling along the coast is more pronounced and during that period a complete overturning of water over the continental shelf takes place. In deeper levels, water masses in the order of their abundance are the Indian equatorial water, Antarctic intermediate water together with Red Sea water and a slight

  19. Mobile weatherstation

    International Nuclear Information System (INIS)

    Hahn, H.; Koutny, P.; Schwabach, H.; Eisenwagner, H.

    1981-01-01

    A mobile weatherstation is described which allows to measure the following parameters: airtemperature, relative humidity, winddirection and windspeed. The station consists of three main units: the central station METEODAT, the multiplexer and the weather measure tower with the sensors. The measured data are displayed in digital form in the central unit and can be printed on a teletype. The power supply is either 220 Volt AC or 24 Volt DC. (author)

  20. Structural Mobility, Exchange Mobility and Subgroup Consistent Mobility Measurement – US–German Mobility Measurements Revisited

    OpenAIRE

    C. SCHLUTER; D. VAN DE GAER

    2008-01-01

    We formalize the concept of structural mobility and use the framework of subgroup consistent mobility measurement to derive a relative and an absolute measure of mobility that is increasing both in upward structural mobility and exchange mobility. In our empirical illustration, we contribute substantively to the ongoing debate about mobility rankings between the USA and Germany.

  1. Bird surveys at McKinley Bay and Hutchison Bay, Northwest Territories, in 1991

    Energy Technology Data Exchange (ETDEWEB)

    Cornish, B J; Dickson, D L; Dickson, H L

    1992-03-01

    McKinley Bay is a shallow protected bay along the eastern Beaufort Sea coast which provides an important habitat for diving ducks. Since 1979, the bay has been the site of a winter harbor and support base for oil and gas exploraton in the Beaufort Sea. Aerial surveys for bird abundance and distribution were conducted in August 1991 as a continuation of long-term monitoring of birds in McKinley Bay and Hutchison Bay, a nearby area used as a control. The main objectives of the 1991 surveys were to expand the set of baseline data on natural annual fluctuations in diving duck numbers, and to determine if numbers of diving ducks had changed since the initial 1981-85 surveys. On the day with the best survey conditions, the population of diving ducks at McKinley bay was estimated at ca 32,000, significantly more than 1981-85. At Hutchison Bay, there were an estimated 11,000 ducks. As in previous years, large numbers of diving ducks were observed off Atkinson Point at the northwest corner of McKinley Bay, at the south end of the bay, and in the northeast corner near a long spit. Most divers in Hutchison Bay were at the west side. Diving ducks, primarily Oldsquaw and scoter, were the most abundant bird group in the study area. Observed distribution patterns of birds are discussed with reference to habitat preferences. 16 refs., 7 figs., 30 tabs.

  2. Mobile Termination and Mobile Penetration

    OpenAIRE

    Hurkens, Sjaak; Jeon, Doh-Shin

    2009-01-01

    In this paper, we study how access pricing affects network competition when subscription demand is elastic and each network uses non-linear prices and can apply termination-based price discrimination. In the case of a fixed per minute termination charge, we find that a reduction of the termination charge below cost has two oppos- ing effects: it softens competition but helps to internalize network externalities. The former reduces mobile penetration while the latter boosts it. We find that fi...

  3. Mobile termination and mobile penetration

    OpenAIRE

    Hurkens, Sjaak

    2009-01-01

    In this paper, we study how access pricing affects network competition when subscription demand is elastic and each network uses non-linear prices and can apply termination-based price discrimination. In the case of a fixed per minute termination charge, we find that a reduction of the termination charge below cost has two opposing effects: it softens competition but helps to internalize network externalities. The former reduces mobile penetration while the latter boosts it. We find that firm...

  4. Mobile Payments : Comparison of Mobile Wallet Concepts

    OpenAIRE

    Narayan, Srikant

    2013-01-01

    Mobile payments are an emerging trend and an alternative to traditional payment methods. Mobile payments involve the usage of the mobile phone to handle credit transfers during purchase of goods and peer to peer money transfers referred to as mobile wallet service, instead of depending on bank cards and cash. In this scenario, while the mobile wallet industry still being in its infancy there exist a few drivers of mobile wallet solutions aiming to create a de-facto standard in the mobile mark...

  5. Metagenomic evidence for reciprocal particle exchange between the mainstem estuary and lateral bay sediments of the lower Columbia River

    Directory of Open Access Journals (Sweden)

    Mariya W Smith

    2015-10-01

    Full Text Available Lateral bays of the lower Columbia River estuary are areas of enhanced water retention that influence net ecosystem metabolism through activities of their diverse microbial communities. Metagenomic characterization of sediment microbiota from three disparate sites in two brackish lateral bays (Baker and Youngs produced approximately 100 Gbp of DNA sequence data analyzed subsequently for predicted SSU rRNA and peptide-coding genes. The metagenomes were dominated by Bacteria. A large component of Eukaryota was present in Youngs Bay samples, i.e. the inner bay sediment was enriched with the invasive New Zealand mudsnail, Potamopyrgus antipodarum, known for high ammonia production. The metagenome was also highly enriched with an archaeal ammonia oxidizer closely related to Nitrosoarchaeum limnia. Combined analysis of sequences and continuous, high-resolution time series of biogeochemical data from fixed and mobile platforms revealed the importance of large-scale reciprocal particle exchanges between the mainstem estuarine water column and lateral bay sediments. Deposition of marine diatom particles in sediments near Youngs Bay mouth was associated with a dramatic enrichment of Bacteroidetes (58% of total Bacteria and corresponding genes involved in phytoplankton polysaccharide degradation. The Baker Bay sediment metagenome contained abundant Archaea, including diverse methanogens, as well as functional genes for methylotrophy and taxonomic markers for syntrophic bacteria, suggesting that active methane cycling occurs at this location. Our previous work showed enrichments of similar anaerobic taxa in particulate matter of the mainstem estuarine water column. In total, our results identify the lateral bays as both sources and sinks of biogenic particles significantly impacting microbial community composition and biogeochemical activities in the estuary.

  6. Site Safety and Food Affect Movements of Semipalmated Sandpipers (Calidris pusilla Migrating Through the Upper Bay of Fundy

    Directory of Open Access Journals (Sweden)

    Ashley J. Sprague

    2008-12-01

    Full Text Available The upper Bay of Fundy is a critical stopover site for Semipalmated Sandpipers (Calidris pusilla during their fall migration. However, little is known about factors that influence selection of feeding and roosting sites by these birds, or the extent to which birds move between different sites during their time in the region. Using radio-telemetry, we studied movement patterns, examined habitat use, and tested hypotheses associated with factors influencing foraging and roost-site selection. Movements of radio-tagged sandpipers were tracked in the upper Bay of Fundy in August 2004 and 2005. In 2004, sandpipers from the Minas Basin, Nova Scotia and Chignecto Bay, New Brunswick and Nova Scotia, were tracked, and in 2005, sandpipers were tracked only in Chignecto Bay. Sandpipers were highly mobile in both the Minas Basin 2004 and Chignecto Bay 2005, making daily movements of up to 20 km between foraging and roosting sites, although very little movement was detected in Chignecto Bay in 2004. Migrating sandpipers appeared to select foraging sites based on relative safety, as measured by distance to cover, provided that these sites offered an adequate food supply. Similarly, roosting sandpipers preferred sites that were far from nearby trees that might offer cover to predators. This preference for safe sites became more apparent later in their stay in the Bay of Fundy, when birds were heavier and, therefore, possibly more vulnerable to predation. Semipalmated Sandpipers appear to be flexible during their time in the upper Bay of Fundy, displaying year-to-year and site-to-site variability in movement and mudflat usage. Therefore, multiple, synchronized population counts should be conducted at known roost sites in order to more accurately estimate Semipalmated Sandpiper abundance in this region. Furthermore, in a highly dynamic system where food can be variable, landscape features such as distance to cover may be important factors to consider when

  7. Submarine glacial landforms on the Bay of Fundy–northern Gulf of Maine continental shelf

    Science.gov (United States)

    Todd, B.J.; Shaw, J.; Valentine, Page C.

    2016-01-01

    The Bay of Fundy–northern Gulf of Maine region surrounds the southern part of Nova Scotia, encompassing, from west to east, the Bay of Fundy, Grand Manan Basin, German Bank, Browns Bank, Northeast Channel and northeastern Georges Bank (Fig. 1a, b). During the last glacial maximum (c. 24–20 14C ka BP), the SE margin of the Laurentide Ice Sheet (LIS) occupied the study area, the rest of the Gulf of Maine and the continental Scotian Shelf off Atlantic Canada (see Dyke et al. 2002, fig. 1; Shaw et al. 2006, fig. 8; Hundert & Piper 2008, fig. 16). Early mapping of the glaciated region on the Scotian Shelf using side-scan sonar imagery and seismic-reflection profiles revealed topographic features interpreted to be recessional moraines indicative of retreat of the LIS (King et al. 1972; King 1996). Subsequently, multibeam sonar seafloor mapping of local-scale glacial landforms on the inner Scotian Shelf off Halifax, Nova Scotia (Fig. 1b) provided further information on the dynamics of the advance and retreat of the ice sheet (Loncarevic et al.1994). Interpretation of seismic-reflection profiles across Georges Bank revealed that the surficial sediment is a veneer of glacial debris transported to Georges Bank by the LIS during the late Pleistocene from continental areas to the north (Shepard et al. 1934; Knott & Hoskins 1968; Schlee 1973; Twichell et al. 1987; Fader et al. 1988). Recent high-resolution multibeam sonar surveys of German Bank and the Bay of Fundy mapped a complex of ice-advance and ice-retreat features attributed to the activity of the LIS (Todd et al. 2007; Todd & Shaw 2012).

  8. Sources and historical record of tin and butyl-tin species in a Mediterranean bay (Toulon Bay, France).

    Science.gov (United States)

    Pougnet, Frédérique; Schäfer, Jörg; Dutruch, Lionel; Garnier, Cédric; Tessier, Erwan; Dang, Duc Huy; Lanceleur, Laurent; Mullot, Jean-Ulrich; Lenoble, Véronique; Blanc, Gérard

    2014-05-01

    Concentrations of inorganic tin (Sn(inorg)), tributyltin (TBT) and its degradation products dibutyltin (DBT) and monobutyltin (MBT) were measured in surface sediments and in two cores from the Toulon Bay, hosting the major French military harbour. Anticipating planned dredging, the aim of the present work is to map and evaluate for the first time the recent and historic contamination of these sediments by inorganic and organic Sn species derived from antifouling paints used for various naval domains including military, trade, tourism and leisure. Tin and butyl-Sn concentrations in the bay varied strongly (4 orders of magnitude), depending on the site, showing maximum values near the shipyards. The concentrations of total Sn (1.3-112 μg g(-1)), TBT (product Sn(inorgBT) is by far the dominant species after 10-12 half-life periods and (c) using recent data to reliably assess former TBT contamination requires the use of a modified butyl-Sn degradation index BDI(mod). Resuspension of extremely contaminated subsurface sediments by the scheduled dredging will probably result in mobilization of important amounts of butyl-Sn species.

  9. Metal concentrations in Kandalaksha Bay, White Sea (Russia) following the spring snowmelt

    International Nuclear Information System (INIS)

    Cobelo-Garcia, A.; Millward, G.E.; Prego, R.; Lukashin, V.

    2006-01-01

    Elevated concentrations of dissolved and particulate Cd, Cu, Pb and Zn have been determined in the waters of Kandalaksha Bay (White Sea, Russia), following the ice melt in the spring of 2000. Dissolved metal maxima in the surface waters were observed at some stations and concentrations generally decreased with depth. The suspended particulate matter (SPM) comprised a non-lithogenic fraction in the range 12-83%, and had elevated metal concentrations that showed no trend with depth or salinity and was compositionally distinct from the sediments. A log-linear relationship existed between the concentrations of metals in sediments and in SPM and their respective Al concentrations, indicating a source of metal-rich particles, with low Al content, to the Bay. The results suggest that Kandalaksha Bay has been impacted by industrial activity on the Kola Peninsula and that restricted water exchange will hinder its recovery from metal contamination. - Elevated dissolved and particulate metal concentrations have been determined in the water column of Kandalaksha Bay, White Sea (Russia)

  10. Holy grail at Baglan Bay

    International Nuclear Information System (INIS)

    Watson, Jim

    1999-01-01

    The UK government's consent for the construction of a gas-fired power plant at Baglan Bay in South Wales is reported, and the growing popularity of economic combined-cycle gas turbine (CCGT) power plants and the resulting environmental improvements are noted . The combining of gas and steam turbines, design developments, and the UK moratorium on planning consents for gas fired power plants are discussed. General Electric's H System technology which will lower the amount of energy lost in the conversion of natural gas to electricity is described, and details of the ten most problematic CCGTs in the UK are given. The domination of the CCGT global market by four manufacturers, and the pressure on manufacturers to develop their designs are considered. (UK)

  11. Wapice News Mobile Application

    OpenAIRE

    Söylemez, Ilke

    2017-01-01

    Since the mobile phones started to have an increasingly significant role in daily life, the mobile application development also started to be an important area in the software industry. The problem for mobile application developers is to develop a mobile application which supports all the devices and platforms on the market. This issue created a need for cross platform mobile applications. The cross platform mobile development refers to the development of mobile applications that could be use...

  12. 78 FR 62293 - Safety Zone, Oyster Festival 30th Anniversary Fireworks Display, Oyster Bay; Oyster Bay, NY

    Science.gov (United States)

    2013-10-15

    ... Safety Zone, Oyster Festival 30th Anniversary Fireworks Display, Oyster Bay; Oyster Bay, NY AGENCY: Coast... zone on the navigable waters of Oyster Bay near Oyster Bay, NY for the Oyster Festival 30th Anniversary... Oyster Festival 30th Anniversary Fireworks Display is scheduled for October 19, 2013 and is one of...

  13. 46 CFR 7.20 - Nantucket Sound, Vineyard Sound, Buzzards Bay, Narragansett Bay, MA, Block Island Sound and...

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 1 2010-10-01 2010-10-01 false Nantucket Sound, Vineyard Sound, Buzzards Bay, Narragansett Bay, MA, Block Island Sound and easterly entrance to Long Island Sound, NY. 7.20 Section 7.20... Atlantic Coast § 7.20 Nantucket Sound, Vineyard Sound, Buzzards Bay, Narragansett Bay, MA, Block Island...

  14. 78 FR 27126 - East Bay, St. Andrews Bay and the Gulf of Mexico at Tyndall Air Force Base, Florida; Restricted...

    Science.gov (United States)

    2013-05-09

    ... DEPARTMENT OF DEFENSE Department of the Army, Corps of Engineers 33 CFR Part 334 East Bay, St. Andrews Bay and the Gulf of Mexico at Tyndall Air Force Base, Florida; Restricted Areas AGENCY: U.S. Army... read as follows: Sec. 334.665 East Bay, St. Andrews Bay and the Gulf of Mexico, Restricted Areas...

  15. 75 FR 15343 - Regulated Navigation Area: Narragansett Bay, RI and Mount Hope Bay, RI and MA, Including the...

    Science.gov (United States)

    2010-03-29

    ...: Narragansett Bay, RI and Mount Hope Bay, RI and MA, Including the Providence River and Taunton River AGENCY... River and Mount Hope Bay in the vicinity of the two Brightman Street bridges have not been adopted and... Island and Mt. Hope Bay, MA.'' The notice was prompted primarily by two events: (1) The U.S. Army Corps...

  16. AL Amyloidosis

    Directory of Open Access Journals (Sweden)

    Desport Estelle

    2012-08-01

    Full Text Available Abstract Definition of the disease AL amyloidosis results from extra-cellular deposition of fibril-forming monoclonal immunoglobulin (Ig light chains (LC (most commonly of lambda isotype usually secreted by a small plasma cell clone. Most patients have evidence of isolated monoclonal gammopathy or smoldering myeloma, and the occurrence of AL amyloidosis in patients with symptomatic multiple myeloma or other B-cell lymphoproliferative disorders is unusual. The key event in the development of AL amyloidosis is the change in the secondary or tertiary structure of an abnormal monoclonal LC, which results in instable conformation. This conformational change is responsible for abnormal folding of the LC, rich in β leaves, which assemble into monomers that stack together to form amyloid fibrils. Epidemiology AL amyloidosis is the most common type of systemic amyloidois in developed countries with an estimated incidence of 9 cases/million inhabitant/year. The average age of diagnosed patients is 65 years and less than 10% of patients are under 50. Clinical description The clinical presentation is protean, because of the wide number of tissues or organs that may be affected. The most common presenting symptoms are asthenia and dyspnoea, which are poorly specific and may account for delayed diagnosis. Renal manifestations are the most frequent, affecting two thirds of patients at presentation. They are characterized by heavy proteinuria, with nephrotic syndrome and impaired renal function in half of the patients. Heart involvement, which is present at diagnosis in more than 50% of patients, leading to restrictive cardiopathy, is the most serious complication and engages prognosis. Diagnostic methods The diagnosis relies on pathological examination of an involved site showing Congo red-positive amyloid deposits, with typical apple-green birefringence under polarized light, that stain positive with an anti-LC antibody by immunohistochemistry and

  17. Radium isotopes in Port Phillip Bay: estimation of the rate of bio irrigation of sediments, and water residence time

    International Nuclear Information System (INIS)

    Hancock, G.J.; Webster, I.T.

    1998-01-01

    Recent work has shown that estuarine sediments are a source of radium (Ra) to coastal waters (Bollinger and Moore, 1982, Webster et al., 1994; Hancock et al., 1997). Ra is soluble in saline water (Moore, 1992, Webster et al., 1995) and is rapidly desorbed into porewater from deposited fluvial sediments where it is continuously generated by insoluble Th parents. The rate at which Ra effuses into surface water has been used to determine the rate of surface-water pore water exchange (Hancock and Murray, 1996). Once in the water column, the behaviour of Ra is essentially conservative, enabling the determination of water residence time in a semi-enclosed estuary (Turekian et al., 1996). Here we use measurements of Ra in an estuary to estimate two water mixing processes. Port Phillip Bay (PPB) is a semi-enclosed estuary adjacent to the city of Melbourne, one of the highest density population centres in Australia. The Bay is approximately 50 km in diameter, and has an average depth of 14 m. A recent study found that the potential for eutrophication and algal blooms in the Bay was intricately linked to the fate of nutrients, particularly nitrogen, discharged into the Bay from rivers, drains, and sewage treatment plants (Harris et al. 1996). Two of the most important processes controlling the levels of inorganic N in the water column were identified as bio irrigation of bottom sediments, and the rate of exchange of Bay water with ocean water via Bass Strait. In this paper we describe how Ra isotopes can be used to estimate the rates of these processes, and we compare these rates with estimates made using conventional techniques. Water and sediment samples were collected from five sites in February 1996. Sediment cores were collected by divers, frozen, and sectioned in the laboratory. Surface, mid depth and bottom water samples were collected using a Niskin bottle. Radionuclide activities were determined by alpha spectrometry (Martin and Hancock, 1992) and gamma spectrometry

  18. Description of gravity cores from San Pablo Bay and Carquinez Strait, San Francisco Bay, California

    Science.gov (United States)

    Woodrow, Donald L.; John L. Chin,; Wong, Florence L.; Fregoso, Theresa A.; Jaffe, Bruce E.

    2017-06-27

    Seventy-two gravity cores were collected by the U.S. Geological Survey in 1990, 1991, and 2000 from San Pablo Bay and Carquinez Strait, California. The gravity cores collected within San Pablo Bay contain bioturbated laminated silts and sandy clays, whole and broken bivalve shells (mostly mussels), fossil tube structures, and fine-grained plant or wood fragments. Gravity cores from the channel wall of Carquinez Strait east of San Pablo Bay consist of sand and clay layers, whole and broken bivalve shells (less than in San Pablo Bay), trace fossil tubes, and minute fragments of plant material.

  19. Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO{sub x} capping layer by sputtering and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Shyh-Jer [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Chou, Cheng-Wei, E-mail: j2222222229@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Ruan, Jian-Long [National Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan (China)

    2017-04-15

    Highlights: • A technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiO{sub x} capping layer. • The V{sub th} shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 10{sup 7}. • The reverse gate leakage current is 10{sup −9} A/mm, and the off-state drain-leakage current is 10{sup −8} A/mm. • The V{sub th} hysteresis is extremely small at about 33 mV. - Abstract: In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiO{sub x} capping layer. The p-NiO{sub x} layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O{sub 2} environment to achieve high hole concentration. The V{sub th} shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 10{sup 7}. The forward and reverse gate breakdown increase from 3.5 V and −78 V to 10 V and −198 V, respectively. The reverse gate leakage current is 10{sup −9} A/mm, and the off-state drain-leakage current is 10{sup −8} A/mm. The V{sub th} hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiO{sub x} after annealing in oxygen environment resulted from the change of Ni{sup 2+} to Ni{sup 3+} and the surge of (111)-orientation.

  20. Delaware River and Upper Bay Sediment Data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The area of coverage consists of 192 square miles of benthic habitat mapped from 2005 to 2007 in the Delaware River and Upper Delaware Bay. The bottom sediment map...

  1. Willapa Bay, Washington Benthic Habitats 1995 Biotic

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — In June 1995, the Columbia River Estuary Study Taskforce (CREST) acquired 295 true color aerial photographs (1:12,000) of Willapa Bay, Washington, from the State of...

  2. Willapa Bay, Washington Benthic Habitats 1995 Geoform

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — In June 1995, the Columbia River Estuary Study Taskforce (CREST) acquired 295 true color aerial photographs (1:12,000) of Willapa Bay, Washington, from the State of...

  3. San Antonio Bay 1986-1989

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The effect of salinity on utilization of shallow-water nursery habitats by aquatic fauna was assessed in San Antonio Bay, Texas. Overall, 272 samples were collected...

  4. Corpus ChristiEast Matagorda Bay 1986

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Patterns of habitat utilization were compared among transplanted and natural Spartina alterniflora marshes in the Halls Lake area of Chocolate Bay in the Galveston...

  5. San Francisco Bay Interferometric Bathymetry: Area B

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — High resolution sonar data were collected over ultra-shallow areas of the San Francisco Bay estuary system. Bathymetric and acoustic backscatter data were collected...

  6. BENTHIC MACROFAUNAL ALIENS IN WILLAPA BAY

    Science.gov (United States)

    Benthic macrofaunal samples were collected at random stations in Willapa Bay, WA, in four habitats [eelgrass (Zostera marina), Atlantic cordgrass (Spartina alterniflora), mud shrimp (Upogebia pugettensis), ghost shrimp (Neotrypaea californiensis)] in 1996 and in seven habitats (Z...

  7. FL BAY SPECTROUT-POPULATION STATUS

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Juvenile spotted seatrout and other sportfish are being monitored annually over a 6-mo period in Florida Bay to assess their abundance over time relative to...

  8. Willapa Bay, Washington Benthic Habitats 1995 Substrate

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — In June 1995, the Columbia River Estuary Study Taskforce (CREST) acquired 295 true color aerial photographs (1:12,000) of Willapa Bay, Washington, from the State of...

  9. Benthic harpacticoid copepods of Jiaozhou Bay, Qingdao

    Science.gov (United States)

    Ma, Lin; Li, Xinzheng

    2017-09-01

    The species richness of benthic harpacticoid copepod fauna in Jiaozhou Bay, Qingdao, on the southern coast of Shandong Peninsula, has not been comprehensively studied. We present a preliminary inventory of species for this region based on material found in nine sediment samples collected from 2011 to 2012. Our list includes 15 species belonging to 15 genera in 9 families, the most speciose family was the Miraciidae Dana, 1846 (seven species); all other families were represented by single species only. Sediment characteristics and depth are determined to be important environmental determinants of harpacticoid distribution in this region. We briefly detail the known distributions of species and provide a key to facilitate their identification. Both harpacticoid species richness and the species/genus ratio in Jiaozhou Bay are lower than in Bohai Gulf and Gwangyang Bay. The poor knowledge of the distribution of benthic harpacticoids, in addition to low sampling effort in Jiaozhou Bay, likely contribute to low species richness.

  10. Biscayne Bay Florida Bottlenose Dolphin Studies

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — These data sets include a compilation of small vessel based studies of bottlenose dolphins that reside within Biscayne Bay, Florida, adjacent estuaries and nearshore...

  11. Advertising on mobile applications

    OpenAIRE

    Sobolevsky, Alexandr

    2015-01-01

    The article analyzes the new method of mobile advertising. Advertising in mobile applications - a subspecies of mobile marketing, where advertising is distributed using mobile phones and smartphones. Ad placement is going on inside of applications and games for smartphones. It has a high potential due to the large number of mobile phone users (over 6.5 billion in 2013).

  12. Mobility Balance Sheet 2009

    International Nuclear Information System (INIS)

    Jorritsma, P.; Derriks, H.; Francke, J.; Gordijn, H.; Groot, W.; Harms, L.; Van der Loop, H.; Peer, S.; Savelberg, F.; Wouters, P.

    2009-06-01

    The Mobility Balance Sheet provides an overview of the state of the art of mobility in the Netherlands. In addition to describing the development of mobility this report also provides explanations for the growth of passenger and freight transport. Moreover, the Mobility Balance Sheet also focuses on a topical theme: the effects of economic crises on mobility. [nl

  13. A Glance at Bohai Bay Oil Province

    Institute of Scientific and Technical Information of China (English)

    Gao Shoubai

    1995-01-01

    @@ Chinese oil industry keeps on developing in 1994. The oil production of Bohai Bay Oil Province located in East China also keeps on growing. Geologically,the total area of Bohai Bay Basin is about 200 000 km2 and the main structural units are: Liaohe Depression, Huanghua Depression,Jizhong Depression, Linqing Depression, Jiyang Depression, Changwei Depression, Bozhong Depression,Chengning Uplift and Cangjing Uplift (see figure 1). Area of the main structural units is listed in following:

  14. Mobile video with mobile IPv6

    CERN Document Server

    Minoli, Daniel

    2012-01-01

    Increased reliance on mobile devices and streaming of video content are two of the most recent changes that have led those in the video distribution industry to be concerned about the shifting or erosion of traditional advertising revenues. Infrastructure providers also need to position themselves to take advantage of these trends. Mobile Video with Mobile IPv6provides an overview of the current mobile landscape, then delves specifically into the capabilities and operational details of IPv6. The book also addresses 3G and 4G services, the application of Mobile IPv6 to streaming and other mobil

  15. Investigation of the Vehicle Mobility in Fording

    Science.gov (United States)

    2016-05-29

    Conference on Multibody System Dynamics May 29 – June 2, 2016, Montréal, Canada Investigation of the Vehicle Mobility in Fording Arman Pazouki1...strategy outlined has been implemented in Chrono as a dedicated add-on called Chrono::FSI [3]. Figure 1 shows a vehicle model used in a fording simulation...rigid objects. Chrono::FSI has been used for vehicle mobility in fording operations as shown in Figure 2. The computational time per simulation time

  16. [Social mobilization].

    Science.gov (United States)

    Bop, C

    1990-04-01

    One of the principal recommendations from Alma Ata and the Bamako Initiative was the need for communities to take responsibility for their own health--a recommendation that still remains unmet and in need of reform in Africa because of the severe economic recession and lack of resources allocated for health care in the region. The mobilization of communities "is the opposite of passivity and submission." People must demystify the notion that health care is the exclusive right of health professionals and should realize that they themselves can bring about changes from the household to the village levels; community mobilization is an integral component of development planning. African societies have developed very centralized structures requiring changes that only their own communities can bring about. Because women remain the principal agents for the family's health they should be informed, about the multiple dimensions leading to good health care to enable them to provide the rest of the family with good nourishment and health care follow-up. Children are a vulnerable and important group that require preventive care. A UNICEF experiment in Senegal is training 10-13 year old school children to visit the parents of 5 children, inform them about vaccinating their children, and to follow-up on their activities with these "adopted families." The need for short and long-term IEC interventions in Africa are a priority and effective strategies must be found to reach the majority of the rural populations where all obstacles such as the lack of infrastructure and illiteracy exist. Mali has used traditional theatre "Koteba" to reach the rural populations on a variety of health issues such as oral rehydration and diarrhea as well as the Rural Audio Library (it used cassettes rather than books) to reach villagers in their own languages. The worst obstacle facing Africa today is the refusal of officials in power to allow people to manage their own lives, of which health is a

  17. Toxic phytoplankton in San Francisco Bay

    Science.gov (United States)

    Rodgers, Kristine M.; Garrison, David L.; Cloern, James E.

    1996-01-01

    The Regional Monitoring Program (RMP) was conceived and designed to document the changing distribution and effects of trace substances in San Francisco Bay, with focus on toxic contaminants that have become enriched by human inputs. However, coastal ecosystems like San Francisco Bay also have potential sources of naturally-produced toxic substances that can disrupt food webs and, under extreme circumstances, become threats to public health. The most prevalent source of natural toxins is from blooms of algal species that can synthesize metabolites that are toxic to invertebrates or vertebrates. Although San Francisco Bay is nutrient-rich, it has so far apparently been immune from the epidemic of harmful algal blooms in the world’s nutrient-enriched coastal waters. This absence of acute harmful blooms does not imply that San Francisco Bay has unique features that preclude toxic blooms. No sampling program has been implemented to document the occurrence of toxin-producing algae in San Francisco Bay, so it is difficult to judge the likelihood of such events in the future. This issue is directly relevant to the goals of RMP because harmful species of phytoplankton have the potential to disrupt ecosystem processes that support animal populations, cause severe illness or death in humans, and confound the outcomes of toxicity bioassays such as those included in the RMP. Our purpose here is to utilize existing data on the phytoplankton community of San Francisco Bay to provide a provisional statement about the occurrence, distribution, and potential threats of harmful algae in this Estuary.

  18. Gradient Analysis and Classification of Carolina Bay Vegetation: A Framework for Bay Wetlands Conservation and Restoration

    Energy Technology Data Exchange (ETDEWEB)

    Diane De Steven,Ph.D.; Maureen Tone,PhD.

    1997-10-01

    This report address four project objectives: (1) Gradient model of Carolina bay vegetation on the SRS--The authors use ordination analyses to identify environmental and landscape factors that are correlated with vegetation composition. Significant factors can provide a framework for site-based conservation of existing diversity, and they may also be useful site predictors for potential vegetation in bay restorations. (2) Regional analysis of Carolina bay vegetation diversity--They expand the ordination analyses to assess the degree to which SRS bays encompass the range of vegetation diversity found in the regional landscape of South Carolina's western Upper Coastal Plain. Such comparisons can indicate floristic status relative to regional potentials and identify missing species or community elements that might be re-introduced or restored. (3) Classification of vegetation communities in Upper Coastal Plain bays--They use cluster analysis to identify plant community-types at the regional scale, and explore how this classification may be functional with respect to significant environmental and landscape factors. An environmentally-based classification at the whole-bay level can provide a system of templates for managing bays as individual units and for restoring bays to desired plant communities. (4) Qualitative model for bay vegetation dynamics--They analyze present-day vegetation in relation to historic land uses and disturbances. The distinctive history of SRS bays provides the possibility of assessing pathways of post-disturbance succession. They attempt to develop a coarse-scale model of vegetation shifts in response to changing site factors; such qualitative models can provide a basis for suggesting management interventions that may be needed to maintain desired vegetation in protected or restored bays.

  19. Mobile OS Comparative Study

    OpenAIRE

    Joseph, Jyothy; K, Shinto Kurian

    2013-01-01

    In the fast growing mobile revolutionary era, many operating systems are playing vital role in present market. This study is intending to identify the apt and secure mobile based on mobile operating systems capability and user requirements.

  20. Mobile Inquiry Based Learning

    NARCIS (Netherlands)

    Specht, Marcus

    2012-01-01

    Specht, M. (2012, 8 November). Mobile Inquiry Based Learning. Presentation given at the Workshop "Mobile inquiry-based learning" at the Mobile Learning Day 2012 at the Fernuniversität Hagen, Hagen, Germany.

  1. MOBILITY: A SYSTEMS APPROACH

    Directory of Open Access Journals (Sweden)

    Mykola I. Striuk

    2015-10-01

    Full Text Available A comprehensive study on the problem of mobility in the socio-educational and technical systems was carried out: the evolution of the concept of mobility in scientific sources of XIX–XXI centuries was analyzed and the new sources on the issue of mobility introduced into scientific circulation, the interrelation of the types of mobility in the socio-pedagogical and technical systems are theoretically grounded, an integrative model of mobility in the information society is proposed. The major trends in academic mobility are identified (the transition from student mobility to mobility programs and educational services providers, the new mobility programs (franchising, double/joint degrees, combinations, nostrification etc. are characterized. The new types of mobility providers are reviewed and attention is focused on virtual universities that are now the basis of virtual mobility of students and activities which are based on the use of new ICT in higher education, especially – the Internet and mobile learning environments.

  2. Micro Mobility Marketing

    DEFF Research Database (Denmark)

    Hosbond, Jens Henrik; Skov, Mikael B.

    2008-01-01

    , in our case a medium-sized retail supermarket. Two prototypes based on push and pull marketing strategies are implemented and evaluated. Taking outset in a synthesis of central issues in contemporary research on mobile marketing, we discuss their role in micro mobility marketing to point to similarities......Mobile marketing refers to marketing of services or goods using mobile technology and mobile marketing holds potentially great economical opportunities. Traditionally, mobile marketing has been viewed as mobility in the large taking place virtually anywhere, anytime. Further, research shows...... considerable number of studies on push-based SMS mobile marketing campaigns. This paper explores a related yet different form of mobile marketing namely micro mobility marketing. Micro mobility marketing denotes mobility in the small, meaning that promotion of goods takes place within a circumscribed location...

  3. AL FIKR AL BALAGHI FI AL MA’ĂNI ‘INDA AS SAKĂKI FI KITABIHI MIFTAHUL ULUM DIRĂSAH BALAGHIYYAH

    Directory of Open Access Journals (Sweden)

    Talqis Nurdianto

    2018-02-01

    Full Text Available Miftāhul ‘Ulūm, written by al-Sakākī, especially the third part, was the beginning of a new phase in the development of Arabic rhetoric. Al-Sakākī divided the rhetoric into three fields of study, which are  (1 Ma’ānī, (2 Bayān, (3 Badī’. However, his style is influenced by philosophers, theologians and their verbal lexicon, which are difficult to take, especially for the ordinary recipient. Al-Sakākī described that his book containing several types of literature, namely, ‘ilm ṣarf in complete version and its conclusion, derivation science, and the grammatical study in the completeness of Ma’ānī and Bayān. The meaning of Makna is the study of completeness and conclusion. Therefore, books and prose, and poem require al-‘Arūḍ and al-Qawāfī include Ṣarf, Grammar, Ma’ānī, Bayān, limitation, reasoning, al’Arūḍ, and al-Qawāfī. He argued that the fields of study were influential in delivering knowledge to the student in order to reach the goal of the author towards his book.This research was an analytical descriptive study of al-Sakākī rhetoric that focused on the normative aspect represented by rhetorical rule and aesthetic aspects. Those aspects were shown by the feeling. Al-Sakākī rhetoric thought is a method based on mental division and has conducted in the construction of many factors, which the most important of them are philosophy and logic. Keywords: thought, rhetoric, meanings, sakkaki, study

  4. Mobile Search and Advertising

    OpenAIRE

    Lovitskii, Vladimir; McCaffery, Colin; Thrasher, Michael; Traynor, David; Wright, Peter

    2009-01-01

    Mobile advertising is a rapidly growing sector providing brands and marketing agencies the opportunity to connect with consumers beyond traditional and digital media and instead communicate directly on their mobile phones. Mobile advertising will be intrinsically linked with mobile search, which has transported from the internet to the mobile and is identified as an area of potential growth. The result of mobile searching show that as a general rule such search result exceed 1...

  5. Trends in Mobile Marketing

    OpenAIRE

    Chocholová, Petra

    2010-01-01

    The principal aim of this thesis is to assess the state of the mobile marketing as of the first quarter of 2011 and to discuss various scenarios of the future development. This thesis defines the terms "mobile marketing" and "mobile advertising" and identifies the main players in the industry. It explores the main categories of mobile advertising such as mobile messaging, in-content and mobile internet advertising. Later, it analyzes the latest trends in the industry and describes in detail t...

  6. BOOK REVIEW OF "CHESAPEAKE BAY BLUES: SCIENCE, POLITICS, AND THE STRUGGLE TO SAVE THE BAY"

    Science.gov (United States)

    This is a book review of "Chesapeake Bay Blues: Science, Politics, and the Struggle to Save the Bay". This book is very well written and provides an easily understandable description of the political challenges faced by those proposing new or more stringent environmental regulat...

  7. 77 FR 21890 - Drawbridge Operation Regulation; Sturgeon Bay Ship Canal, Sturgeon Bay, WI

    Science.gov (United States)

    2012-04-12

    ... Street and Maple-Oregon Bridges so vehicular traffic congestion would not develop on downtown Sturgeon... the efficient movement of vehicular traffic in Sturgeon Bay. The Sturgeon Bay Ship Canal is... experiences a significant increase in vehicular and vessel traffic during the peak tourist and navigation...

  8. 76 FR 28309 - Drawbridge Operation Regulation; Sturgeon Bay Ship Canal, Sturgeon Bay, WI

    Science.gov (United States)

    2011-05-17

    ... vehicular traffic congestion would not develop on downtown Sturgeon Bay streets due to unscheduled bridge... schedules during the peak tourist and navigation seasons to provide for the efficient movement of vehicular... between Lake Michigan and Green Bay. The area experiences a significant increase in vehicular and vessel...

  9. Cambridge Bay: Six years later

    International Nuclear Information System (INIS)

    Edworthy, J.

    1992-01-01

    The story of a wind energy project in Cambridge Bay, Northwest Territories, is presented from the perspective of the company that supplied the equipment and supported the project through its life. The project was intended to demonstrate the technical, economic, institutional, and operational issues and barriers to the use of wind power in remote communities. The system, involving four Carter Model 25 units each rated at 25 kW, was installed in 1987 and commissioned in January 1988. Shortly thereafter, the Northern Canada Power Commission (which requested the project in the first place) was taken over by the territorial administration, and employee continuity was disrupted. At about the same time, Federal support for the project decreased. Technical problems included a transformer failure, a generator failure, and a failed yaw tube which turned out to be lightly designed and poorly made. The Carter turbine company also went out of business, making spare parts difficult to obtain. The utility organization changed abruptly in summer 1991 with the arrival of a new area superintendent who did not support the project. The wind farm was shut down in 1992. The project generated a total of 160,982 kWh with over 71% availability. The positive and negative results from the project are summarized and recommendations are made for future Arctic wind power projects. 2 figs., 1 tab

  10. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

    International Nuclear Information System (INIS)

    Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo

    2013-01-01

    Highlights: •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure. •The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness. •The conditions for the disappearance of 2DHG are discussed. •Increasing buffer Al content provides better electron confinement. •Dislocation scattering is reduced in the DH-structure. -- Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG

  11. Physical processes in a coupled bay-estuary coastal system: Whitsand Bay and Plymouth Sound

    Science.gov (United States)

    Uncles, R. J.; Stephens, J. A.; Harris, C.

    2015-09-01

    Whitsand Bay and Plymouth Sound are located in the southwest of England. The Bay and Sound are separated by the ∼2-3 km-wide Rame Peninsula and connected by ∼10-20 m-deep English Channel waters. Results are presented from measurements of waves and currents, drogue tracking, surveys of salinity, temperature and turbidity during stratified and unstratified conditions, and bed sediment surveys. 2D and 3D hydrodynamic models are used to explore the generation of tidally- and wind-driven residual currents, flow separation and the formation of the Rame eddy, and the coupling between the Bay and the Sound. Tidal currents flow around the Rame Peninsula from the Sound to the Bay between approximately 3 h before to 2 h after low water and form a transport path between them that conveys lower salinity, higher turbidity waters from the Sound to the Bay. These waters are then transported into the Bay as part of the Bay-mouth limb of the Rame eddy and subsequently conveyed to the near-shore, east-going limb and re-circulated back towards Rame Head. The Simpson-Hunter stratification parameter indicates that much of the Sound and Bay are likely to stratify thermally during summer months. Temperature stratification in both is pronounced during summer and is largely determined by coastal, deeper-water stratification offshore. Small tidal stresses in the Bay are unable to move bed sediment of the observed sizes. However, the Bay and Sound are subjected to large waves that are capable of driving a substantial bed-load sediment transport. Measurements show relatively low levels of turbidity, but these respond rapidly to, and have a strong correlation with, wave height.

  12. Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

    Science.gov (United States)

    Liu, Yi; He, Bo; Pun, Andrew

    2015-11-24

    A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

  13. Concentration of PSP (Paralytic Shellfish Poisoning) Toxin On Shellfish From Inner Ambon Bay and Kao Bay North Halmahera

    Science.gov (United States)

    Pello, F. S.; Haumahu, S.; Huliselan, N. V.; Tuapattinaja, M. A.

    2017-10-01

    The Inner Ambon Bay and Kao Bay have potential on fisheries resources which one of them is molluscs. Molluscs especially for class bivalve have economical values and are consumed by coastal community. The research had been done to analyze saxitoxin (STX) concentration on bivalves from Kao Bay and Inner Ambon Bay. The Saxitoxin Elisa Test Kit Protocol was used to determine saxitoxin concentration. The measurement showed that the highest concentration of saxitoxin (392.42 µg STXeq/100g shellfish meat) was Gafrarium tumidum from Ambon Bay, whereas concentration of saxitoxin (321.83 µg STXeq/100g shellfish meat) was Mactra mera from Kao Bay

  14. Mobil reklamlar ve mobil reklam araçlarına yönelik tutumlar

    OpenAIRE

    Barutçu, Süleyman; Öztürk Göl, Meltem

    2009-01-01

    Bu çalışmanın amacı, pazarlama bölümü yöneticilerinin dikkatlerini mobil iletişim teknolojilerindeki gelişmelerin sonucu olarak ortaya çıkan mobil pazarlama ve mobil reklam uygulamalarına çekmektir. Çalışmanın kavramsal analiz bölümünde mobil pazarlama, mobil reklamların önemi açıklanmış ve mobil reklam araçları (SMS, MMS ve Bluetooth Reklamları) analiz edilmiştir. Araştırma bölümünde ise mobil telefon kullanıcılarının mobil reklam araçlarına yönelik tutumlarının karşılaştırmalı olarak belirl...

  15. PEMANFATAN TEOREMA BAYES DALAM PENENTUAN PENYAKIT THT

    Directory of Open Access Journals (Sweden)

    Sri Winiarti

    2008-07-01

    Full Text Available Dalam konsep pelacakan dalam mencari solusi dengan pendekatan artificial inteligent, ada berbagai metode yang dapat diterapkan untuk mengatasi masalah ketidakpastian saat proses pelacakan terjadi. Salah satunya adalah teorema bayes. Adanya ketidakpastian pada proses pelacakan dapat terjadi karena adanya perubahan pengetahuan yang ada di dalam sistem. Untuk itu diperlukan adanya suatu metode untuk mengatasi permasalahan tersebut. Dalam penelitian ini telah diterapkan suatu metode untuk mengatasi ketidakpastian dengan teorema Bayes pada kasus pelacakan untuk mendiagnosa penyakit pada THT (Telinga,Hidung dan Tenggorokan. Subjek pada penelitian ini adalah proses pelacakan untuk menentukan penyakit THT dengan model penalaran forward chaining dan metode kepastiannya menggunakan teorema bayes dengan cara menghitung nilai probabilitas suatu penyakit dan membandingkan probabilitas setiap gejalanya. Model pengembangan perangkat lunak yang digunakan dalam penelitian ini adalah Waterfall. Metode Waterfall diawali dengan analisis data, perancangan sistem, pengkodean menggunakan Visual Basic 6.0, pengujian sistem dengan black box test dan alfa test. Dari penelitian yang dilakukan menghasilkan sebuah perangkat lunak yaitu yang mampu menentukan penyakit pada THT dengan menerapkan metode bayes untuk mengatasi ketidakpastian. Hasil uji coba sistem menujukkan bahwa aplikasi ini layak dan dapat digunakan. Kata kunci : Penyakit, THT, Teorema Bayes.

  16. Changing Salinity Patterns in Biscayne Bay, Florida

    Science.gov (United States)

    ,

    2004-01-01

    Biscayne Bay, Fla., is a 428-square-mile (1,109-square-kilometer) subtropical estuarine ecosystem that includes Biscayne National Park, the largest marine park in the U.S. national park system (fig. 1). The bay began forming between 5,000 and 3,000 years ago as sea level rose and southern Florida was flooded. Throughout most of its history, the pristine waters of the bay supported abundant and diverse fauna and flora, and the bay was a nursery for the adjacent coral-reef and marine ecosystems. In the 20th century, urbanization of the Miami-Dade County area profoundly affected the environment of the bay. Construction of powerplants, water-treatment plants, and solid-waste sites and large-scale development along the shoreline stressed the ecosystem. Biscayne National Monument was established in 1968 to ?preserve and protect for the education, inspiration, recreation and enjoyment of present and future generations a rare combination of terrestrial, marine, and amphibious life in a tropical setting of great natural beauty? (Public Law 90?606). The monument was enlarged in 1980 and designated a national park.

  17. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-01-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH 3 :Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH 3 :Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of ∼1.0 nm over 2x2 μm 2 atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 μm/h were achieved. TD densities in the buffers as low as 3x10 9 cm -2 were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz

  18. Mobile Operating Systems

    OpenAIRE

    Vipin Kamboj; Hitesh Gupta

    2012-01-01

    Mobile phones are used by every people in today’s life. We use mobile phones without knowing the different factors that a mobile used including its technology, operating system, CPU ,RAM etc. Many types of operating system are used by different mobile. Every operating system has their advantage

  19. Mobile Africa : an introduction

    NARCIS (Netherlands)

    Bruijn, de M.E.; Dijk, van R.A.; Foeken, D.W.J.

    2001-01-01

    The case studies in this book on mobility in sub-Saharan Africa critically discuss dichotomous interpretations of mobility and reject the idea that migration indicates a breakdown in society. They adopt the approach that sedentary and mobile worlds converge and that mobility is part of the

  20. Surface layer temperature inversion in the Bay of Bengal

    Digital Repository Service at National Institute of Oceanography (India)

    Pankajakshan, T.; Gopalakrishna, V.V.; Muraleedharan, P.M.; Reddy, G.V.; Araligidad, N.; Shenoy, Shrikant

    Surface layer temperature inversion occurring in the Bay of Bengal has been addressed. Hydrographic data archived in the Indian Oceanographic Data Center are used to understand various aspects of the temperature inversion of surface layer in the Bay...